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IRDC3037A Infineon Technologies IRU3037(A ,PbF).pdf description Description: KIT W/IRU3037 PWM CTRL 400KHZ 8P
Part Status: Obsolete
Outputs and Type: 1, Non-Isolated
Main Purpose: DC/DC, Step Down
Supplied Contents: Board(s)
Utilized IC / Part: IRU3037A
Board Type: Fully Populated
Regulator Topology: Buck
Frequency - Switching: 400kHz
Voltage - Input: 4V ~ 25V
Packaging: Box
Produkt ist nicht verfügbar
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IRDC3038 Infineon Technologies irdc3038.pdf Description: KIT W/IRU3038 PWM CTRL DDR 14-PI
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IRDC3046 Infineon Technologies irdc3046.pdf Description: KIT W/IRU3046 DUAL PWM LDO CTRLR
Outputs and Type: 2, Non-Isolated
Main Purpose: DC/DC, Step Down with LDO
Supplied Contents: Board(s)
Utilized IC / Part: IRU3046
Board Type: Fully Populated
Regulator Topology: Buck
Frequency - Switching: 200kHz
Current - Output: 16A, 2A
Voltage - Output: 1.5V, 2.5V
Packaging: Box
Produkt ist nicht verfügbar
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IRDC3048 Infineon Technologies irdc3048.pdf Description: KIT W/IRU3048 DUAL PWM LDO CTRLR
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IRPLLNR4 Infineon Technologies lnr4.pdf Description: BALLAST UNIV INP FLUOR IR2166
Part Status: Obsolete
Supplied Contents: Board(s)
Utilized IC / Part: IR2166
Type: Opto/Lighting
Function: Ballast Control
Packaging: Box
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IRDCIP1001-A Infineon Technologies irdcip1001-a.pdf Description: CONV SGL PHA SYNC BUCK 3.3-4.5V
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IRDCIP1001-B Infineon Technologies irdcip1001-b.pdf Description: CONV SGL PHA SYNC BUCK 5-12V
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PEB20256E-V21 PEB20256E-V21 Infineon Technologies PEB20256M%20E.pdf Description: IC CONTROLLER INTERFACE 388-BGA
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PEB20320H-V34 PEB20320H-V34 Infineon Technologies PEB%2020320.pdf Description: IC TELECOM INTERFACE 160-MQFP
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PEB20321H-V22 PEB20321H-V22 Infineon Technologies PEB,%20PEF%2020321.pdf Description: IC TELECOM INTERFACE 160-MQFP
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PEB20534H10-V21 Infineon Technologies PEB,PEF%2020534.pdf Description: IC INTERFACE SPECIALIZED 208FQFP
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PEB20534H52-V2.1 Infineon Technologies PEB,PEF%2020534.pdf Description: IC INTERFACE SPECIALIZED 208FQFP
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PEB2086H-V14TR PEB2086H-V14TR Infineon Technologies PEB2085,86.pdf Description: IC TELECOM INTERFACE MQFP-64
Supplier Device Package: P-MQFP-64
Current - Supply: 22mA
Voltage - Supply: 4.75V ~ 5.25V
Operating Temperature: 0°C ~ 70°C
Interface: S-Bus
Mounting Type: Surface Mount
Package / Case: 64-QFP
Packaging: Tape & Reel (TR)
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PEB22504HT-V11 PEB22504HT-V11 Infineon Technologies PEB 22504.pdf Description: IC INTERFACE SPECIALIZED 100TQFP
Supplier Device Package: PG-TQFP-100-3
Applications: Wireless
Voltage - Supply: 3.13V ~ 3.46V
Mounting Type: Surface Mount
Package / Case: 100-LQFP
Packaging: Tray
Produkt ist nicht verfügbar
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PEB2255H-V13 PEB2255H-V13 Infineon Technologies PEB%202255.pdf Description: IC INTERFACE SPECIALIZED 80MQFP
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PEB2256H-V12 PEB2256H-V12 Infineon Technologies PEB2256HT_E.pdf Description: IC INTERFACE SPECIALIZED 80MQFP
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PEB2447H-V12 PEB2447H-V12 Infineon Technologies PEB2447.pdf Description: IC INTERFACE SPECIALIZED 100MQFP
Part Status: Obsolete
Supplier Device Package: PG-MQFP-100-2
Applications: Memory Time Switch
Mounting Type: Surface Mount
Package / Case: 100-BQFP
Packaging: Tray
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PEB3265H-V13 PEB3265H-V13 Infineon Technologies PEB3264%28-2%29%2C%203265.pdf Description: IC TELECOM INTERFACE MQFP-64
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PEF22810T-V21TR PEF22810T-V21TR Infineon Technologies 10BaseS%20Product%20Brief.pdf Description: IC CHIPSET VDSL-L 4BAND 8-PDSO
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PEF3452H-V13 PEF3452H-V13 Infineon Technologies PEF3452.pdf Description: IC TELECOM INTERFACE MQFP-44
Packaging: Tray
Package / Case: 44-QFP
Mounting Type: Surface Mount
Function: Line Interface Unit (LIU)
Interface: DS3, E3, STS-1
Operating Temperature: -40°C ~ 85°C
Voltage - Supply: 3.13V ~ 3.46V
Current - Supply: 155mA
Supplier Device Package: PG-MQFP-44-2
Part Status: Obsolete
Number of Circuits: 1
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PSB2163T-V31TR PSB2163T-V31TR Infineon Technologies PSB2163.pdf Description: IC TELECOM INTERFACE 28-PDSO
Packaging: Tape & Reel (TR)
Package / Case: 28-SOIC (0.295", 7.50mm Width)
Mounting Type: Surface Mount
Function: CODEC Filter
Interface: IOM-2, PCI, Serial
Operating Temperature: -25°C ~ 80°C
Voltage - Supply: 5V
Current - Supply: 900µA
Supplier Device Package: PG-DSO-28
Number of Circuits: 1
Power (Watts): 1 mW
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PXB4220E-V32 PXB4220E-V32 Infineon Technologies PXB4219E-21E.pdf Description: IC CHIPSET 8 E1/T1 LINE 256-BGA
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PXB4220E-V33 PXB4220E-V33 Infineon Technologies PXB4219E-21E.pdf Description: IC CHIPSET 8 E1/T1 LINE 256-BGA
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SAB82525H-V21 SAB82525H-V21 Infineon Technologies SAB%2CSAF%2082525%2C26.pdf Description: IC INTERFACE SPECIALIZED 44MQFP
Packaging: Tube
Package / Case: 44-QFP
Mounting Type: Surface Mount
Interface: Serial
Voltage - Supply: 4.75V ~ 5.25V
Supplier Device Package: PG-MQFP-44-2
Part Status: Obsolete
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SAB82525N-V21TR SAB82525N-V21TR Infineon Technologies SAB%2CSAF%2082525%2C26.pdf Description: IC INTERFACE SPECIALIZED 44PLCC
Packaging: Tape & Reel (TR)
Package / Case: 44-LCC (J-Lead)
Mounting Type: Surface Mount
Interface: Serial
Voltage - Supply: 4.75V ~ 5.25V
Supplier Device Package: P-LCC-44-1
Part Status: Obsolete
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SAB82526N-V21 SAB82526N-V21 Infineon Technologies SAB%2CSAF%2082525%2C26.pdf Description: IC INTERFACE SPECIALIZED 44PLCC
Packaging: Tube
Package / Case: 44-LCC (J-Lead)
Mounting Type: Surface Mount
Interface: Serial
Voltage - Supply: 4.75V ~ 5.25V
Supplier Device Package: P-LCC-44-1
Part Status: Obsolete
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SAB82532H10V32A SAB82532H10V32A Infineon Technologies SAB,SAF82532.pdf Description: IC INTERFACE SPECIALIZED 80MQFP
Supplier Device Package: P-MQFP-80-1
Voltage - Supply: 4.75V ~ 5.25V
Interface: Serial
Mounting Type: Surface Mount
Package / Case: 80-QFP
Packaging: Tube
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SAE800 SAE800 Infineon Technologies SAE_800.pdf Description: IC AUDIO TONE PROCESSOR 8DIP
Number of Channels: 1
Part Status: Obsolete
Supplier Device Package: PG-DIP-8
Applications: Audio Systems
Specifications: 100kHz
Voltage - Supply: 2.8V ~ 18V
Operating Temperature: -25°C ~ 125°C (TJ)
Interface: Logic
Function: Audio Tone Processor
Mounting Type: Through Hole
Package / Case: 8-DIP (0.300", 7.62mm)
Packaging: Tube
Produkt ist nicht verfügbar
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SAF82525N-V21 SAF82525N-V21 Infineon Technologies SAB%2CSAF%2082525%2C26.pdf Description: IC INTERFACE SPECIALIZED 44PLCC
Packaging: Tube
Package / Case: 44-LCC (J-Lead)
Mounting Type: Surface Mount
Interface: Serial
Voltage - Supply: 4.75V ~ 5.25V
Supplier Device Package: P-LCC-44-1
Part Status: Obsolete
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SAF82532N10V32A Infineon Technologies SAB%2CSAF82532.pdf Description: IC INTERFACE SPECIALIZED 68PLCC
Packaging: Tube
Package / Case: 68-LCC (J-Lead)
Mounting Type: Surface Mount
Interface: Serial
Voltage - Supply: 4.75V ~ 5.25V
Supplier Device Package: P-LCC-68
Part Status: Obsolete
Produkt ist nicht verfügbar
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TCA785 TCA785 Infineon Technologies tca785.pdf Description: IC PHASE CONTROL 250MA OUT 16DIP
Part Status: Obsolete
Supplier Device Package: PG-DIP-16-1
Current - Supply: 6.5mA
Applications: Multiphase Controller
Voltage - Supply: 8V ~ 18V
Operating Temperature: -25°C ~ 85°C
Mounting Type: Through Hole
Package / Case: 16-DIP (0.300", 7.62mm)
Packaging: Tube
Produkt ist nicht verfügbar
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PEB2075N-V13TR PEB2075N-V13TR Infineon Technologies PEB2075.pdf Description: IC CONTROLLER D-CH EXCH 44-PLCC
Part Status: Obsolete
Supplier Device Package: P-LCC-44
Current - Supply: 10mA
Voltage - Supply: 4.75V ~ 5.25V
Operating Temperature: 0°C ~ 70°C
Interface: PCM
Mounting Type: Surface Mount
Package / Case: 44-LCC (J-Lead)
Packaging: Cut Tape (CT)
Produkt ist nicht verfügbar
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SAB82525N-V21TR SAB82525N-V21TR Infineon Technologies SAB%2CSAF%2082525%2C26.pdf Description: IC INTERFACE SPECIALIZED 44PLCC
Packaging: Cut Tape (CT)
Package / Case: 44-LCC (J-Lead)
Mounting Type: Surface Mount
Interface: Serial
Voltage - Supply: 4.75V ~ 5.25V
Supplier Device Package: P-LCC-44-1
Part Status: Obsolete
Produkt ist nicht verfügbar
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PEF22810T-V21TR PEF22810T-V21TR Infineon Technologies 10BaseS%20Product%20Brief.pdf Description: IC CHIPSET VDSL-L 4BAND 8-PDSO
Produkt ist nicht verfügbar
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BF998E6327HTSA1 BF998E6327HTSA1 Infineon Technologies BF998_Rev2007.pdf Description: RF MOSFET 8V SOT143
Packaging: Tape & Reel (TR)
Package / Case: TO-253-4, TO-253AA
Current Rating (Amps): 30mA
Mounting Type: Surface Mount
Frequency: 45MHz
Configuration: N-Channel
Gain: 28dB
Technology: MOSFET (Metal Oxide)
Noise Figure: 2.8dB
Supplier Device Package: PG-SOT-143-3D
Part Status: Last Time Buy
Voltage - Rated: 12 V
Voltage - Test: 8 V
Current - Test: 10 mA
Produkt ist nicht verfügbar
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BSS119E6327 BSS119E6327 Infineon Technologies BSS119_Rev1.3.pdf Description: MOSFET N-CH 100V 170MA SOT23-3
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 170mA (Ta)
Rds On (Max) @ Id, Vgs: 6Ohm @ 170mA, 10V
Power Dissipation (Max): 360mW (Ta)
Vgs(th) (Max) @ Id: 2.3V @ 50µA
Supplier Device Package: PG-SOT23
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 2.5 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 78 pF @ 25 V
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BSP123L6327HTSA1 BSP123L6327HTSA1 Infineon Technologies BSP123_Rev2010.pdf Description: MOSFET N-CH 100V 370MA SOT223-4
Input Capacitance (Ciss) (Max) @ Vds: 70 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 2.4 nC @ 10 V
Drain to Source Voltage (Vdss): 100 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 2.8V, 10V
Part Status: Obsolete
Supplier Device Package: PG-SOT223-4
Qualification: AEC-Q101
Grade: Automotive
Vgs(th) (Max) @ Id: 1.8V @ 50µA
Power Dissipation (Max): 1.79W (Ta)
Rds On (Max) @ Id, Vgs: 6Ohm @ 370mA, 10V
Current - Continuous Drain (Id) @ 25°C: 370mA (Ta)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-261-4, TO-261AA
Packaging: Tape & Reel (TR)
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BSP129E6327 BSP129E6327 Infineon Technologies Infineon-BSP129-DS-v01_42-en.pdf?fileId=db3a30433c1a8752013c1fc296d2395f Description: MOSFET N-CH 240V 350MA SOT223-4
Packaging: Tape & Reel (TR)
Package / Case: TO-261-4, TO-261AA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel, Depletion Mode
Current - Continuous Drain (Id) @ 25°C: 350mA (Ta)
Rds On (Max) @ Id, Vgs: 6Ohm @ 350mA, 10V
Power Dissipation (Max): 1.8W (Ta)
Vgs(th) (Max) @ Id: 1V @ 108µA
Supplier Device Package: PG-SOT223-4
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 0V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 240 V
Gate Charge (Qg) (Max) @ Vgs: 5.7 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 108 pF @ 25 V
Grade: Automotive
Qualification: AEC-Q101
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BSP295E6327 BSP295E6327 Infineon Technologies Infineon-BSP295-DS-v02_03-en.pdf?folderId=5546d4694909da4801490a07012f053b&fileId=db3a30433b47825b013b5fc5eed1573f Description: MOSFET N-CH 60V 1.8A SOT223-4
Packaging: Tape & Reel (TR)
Package / Case: TO-261-4, TO-261AA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 1.8A (Ta)
Rds On (Max) @ Id, Vgs: 300mOhm @ 1.8A, 10V
Power Dissipation (Max): 1.8W (Ta)
Vgs(th) (Max) @ Id: 1.8V @ 400µA
Supplier Device Package: PG-SOT223-4
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 17 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 368 pF @ 25 V
Grade: Automotive
Qualification: AEC-Q101
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BSP296E6327 BSP296E6327 Infineon Technologies BSP296.pdf Description: MOSFET N-CH 100V 1.1A SOT223-4
Packaging: Tape & Reel (TR)
Package / Case: TO-261-4, TO-261AA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 1.1A (Ta)
Rds On (Max) @ Id, Vgs: 700mOhm @ 1.1A, 10V
Power Dissipation (Max): 1.79W (Ta)
Vgs(th) (Max) @ Id: 1.8V @ 400µA
Supplier Device Package: PG-SOT223-4
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 17.2 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 364 pF @ 25 V
Grade: Automotive
Qualification: AEC-Q101
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BSP315P-E6327 BSP315P-E6327 Infineon Technologies BSP315P.pdf Description: MOSFET P-CH 60V 1.17A SOT223-4
Input Capacitance (Ciss) (Max) @ Vds: 160 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 7.8 nC @ 10 V
Drain to Source Voltage (Vdss): 60 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Supplier Device Package: PG-SOT223-4
Vgs(th) (Max) @ Id: 2V @ 160µA
Power Dissipation (Max): 1.8W (Ta)
Rds On (Max) @ Id, Vgs: 800mOhm @ 1.17A, 10V
Current - Continuous Drain (Id) @ 25°C: 1.17A (Ta)
FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 155°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-261-4, TO-261AA
Packaging: Tape & Reel (TR)
Qualification: AEC-Q101
Grade: Automotive
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BSP88E6327 BSP88E6327 Infineon Technologies BSP88.pdf Description: MOSFET N-CH 240V 350MA SOT223-4
Input Capacitance (Ciss) (Max) @ Vds: 95 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 6.8 nC @ 10 V
Drain to Source Voltage (Vdss): 240 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 2.8V, 4.5V
Part Status: Obsolete
Supplier Device Package: PG-SOT223-4
Vgs(th) (Max) @ Id: 1.4V @ 108µA
Power Dissipation (Max): 1.7W (Ta)
Rds On (Max) @ Id, Vgs: 6Ohm @ 350mA, 10V
Current - Continuous Drain (Id) @ 25°C: 350mA (Ta)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-261-4, TO-261AA
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar
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BSS123E6327 BSS123E6327 Infineon Technologies DS_448_BSS123.pdf Description: MOSFET N-CH 100V 170MA SOT23-3
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 170mA (Ta)
Rds On (Max) @ Id, Vgs: 6Ohm @ 170mA, 10V
Power Dissipation (Max): 360mW (Ta)
Vgs(th) (Max) @ Id: 1.8V @ 50µA
Supplier Device Package: PG-SOT23
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 2.67 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 69 pF @ 25 V
Grade: Automotive
Qualification: AEC-Q101
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BSS131E6327 BSS131E6327 Infineon Technologies BSS131.pdf Description: MOSFET N-CH 240V 110MA SOT23-3
Input Capacitance (Ciss) (Max) @ Vds: 77 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 3.1 nC @ 10 V
Drain to Source Voltage (Vdss): 240 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Part Status: Obsolete
Supplier Device Package: PG-SOT23
Vgs(th) (Max) @ Id: 1.8V @ 56µA
Power Dissipation (Max): 360mW (Ta)
Rds On (Max) @ Id, Vgs: 14Ohm @ 100mA, 10V
Current - Continuous Drain (Id) @ 25°C: 110mA (Ta)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-236-3, SC-59, SOT-23-3
Packaging: Tape & Reel (TR)
Qualification: AEC-Q101
Grade: Automotive
Produkt ist nicht verfügbar
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BSS138N-E6327 BSS138N-E6327 Infineon Technologies BSS138N.pdf Description: MOSFET N-CH 60V 230MA SOT23-3
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 230mA (Ta)
Rds On (Max) @ Id, Vgs: 3.5Ohm @ 230mA, 10V
Power Dissipation (Max): 360mW (Ta)
Vgs(th) (Max) @ Id: 1.4V @ 250µA
Supplier Device Package: PG-SOT23
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 1.4 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 41 pF @ 25 V
Grade: Automotive
Qualification: AEC-Q101
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BSS84P-E6327 BSS84P-E6327 Infineon Technologies BSS84P.pdf Description: MOSFET P-CH 60V 170MA SOT23-3
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 170mA (Ta)
Rds On (Max) @ Id, Vgs: 8Ohm @ 170mA, 10V
Power Dissipation (Max): 360mW (Ta)
Vgs(th) (Max) @ Id: 2V @ 20µA
Supplier Device Package: PG-SOT23
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 1.5 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 19 pF @ 25 V
Grade: Automotive
Qualification: AEC-Q101
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BSS87E6327 BSS87E6327 Infineon Technologies Infineon-BSS87-DS-v01_42-en.pdf?fileId=db3a30433b47825b013b60b6e9436ddb Description: MOSFET N-CH 240V 260MA SOT89-4
Packaging: Tape & Reel (TR)
Package / Case: TO-243AA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 260mA (Ta)
Rds On (Max) @ Id, Vgs: 6Ohm @ 260mA, 10V
Power Dissipation (Max): 1W (Ta)
Vgs(th) (Max) @ Id: 1.8V @ 108µA
Supplier Device Package: PG-SOT89-4-2
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 240 V
Gate Charge (Qg) (Max) @ Vgs: 5.5 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 97 pF @ 25 V
Grade: Automotive
Qualification: AEC-Q101
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BUP213 BUP213 Infineon Technologies bup213.pdf description Description: IGBT 1200V 32A 200W TO220
Power - Max: 200 W
Current - Collector Pulsed (Icm): 64 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Current - Collector (Ic) (Max): 32 A
Part Status: Obsolete
Test Condition: 600V, 15A, 82Ohm, 15V
Td (on/off) @ 25°C: 70ns/400ns
Supplier Device Package: TO-220AB
Vce(on) (Max) @ Vge, Ic: 3.2V @ 15V, 15A
Input Type: Standard
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-220-3
Packaging: Tube
Produkt ist nicht verfügbar
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BUZ30A BUZ30A Infineon Technologies BUZ30A.pdf description Description: MOSFET N-CH 200V 21A TO220-3
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 21A (Tc)
Rds On (Max) @ Id, Vgs: 130mOhm @ 13.5A, 10V
Power Dissipation (Max): 125W (Tc)
Vgs(th) (Max) @ Id: 4V @ 1mA
Supplier Device Package: PG-TO220-3-1
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 200 V
Input Capacitance (Ciss) (Max) @ Vds: 1900 pF @ 25 V
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BUZ73 BUZ73 Infineon Technologies BUZ73.pdf Description: MOSFET N-CH 200V 7A TO220-3
Input Capacitance (Ciss) (Max) @ Vds: 530 pF @ 25 V
Drain to Source Voltage (Vdss): 200 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Supplier Device Package: PG-TO220-3
Vgs(th) (Max) @ Id: 4V @ 1mA
Power Dissipation (Max): 40W (Tc)
Rds On (Max) @ Id, Vgs: 400mOhm @ 4.5A, 10V
Current - Continuous Drain (Id) @ 25°C: 7A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-220-3
Packaging: Tube
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BUZ80A BUZ80A Infineon Technologies BUZ80A.pdf Description: MOSFET N-CH 800V 3.6A TO220AB
Rds On (Max) @ Id, Vgs: 3Ohm @ 2A, 10V
Current - Continuous Drain (Id) @ 25°C: 3.6A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-220-3
Packaging: Tube
Input Capacitance (Ciss) (Max) @ Vds: 1350 pF @ 25 V
Drain to Source Voltage (Vdss): 800 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Discontinued at Digi-Key
Supplier Device Package: TO-220AB
Vgs(th) (Max) @ Id: 4V @ 1mA
Power Dissipation (Max): 100W (Tc)
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SGP30N60XKSA1 SGP30N60XKSA1 Infineon Technologies SGP_B_W30N60_3.pdf Description: IGBT 600V 41A 250W TO263
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SPD07N60S5 SPD07N60S5 Infineon Technologies SPD_U07N60S5_Rev.2.4.pdf?folderId=db3a304412b407950112b408e8c90004&fileId=db3a304412b407950112b42c8df34723 Description: MOSFET N-CH 600V 7.3A TO252-3
Input Capacitance (Ciss) (Max) @ Vds: 970 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 35 nC @ 10 V
Drain to Source Voltage (Vdss): 600 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Supplier Device Package: PG-TO252-3-11
Vgs(th) (Max) @ Id: 5.5V @ 350µA
Power Dissipation (Max): 83W (Tc)
Rds On (Max) @ Id, Vgs: 600mOhm @ 4.6A, 10V
Current - Continuous Drain (Id) @ 25°C: 7.3A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar
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SPP03N60S5HKSA1 SPP03N60S5HKSA1 Infineon Technologies SPP03N60S5_Rev.2.4.pdf?folderId=db3a304412b407950112b408e8c90004&fileId=db3a304412b407950112b42c7ad9470b Description: MOSFET N-CH 600V 3.2A TO220-3
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 3.2A (Tc)
Rds On (Max) @ Id, Vgs: 1.4Ohm @ 2A, 10V
Power Dissipation (Max): 38W (Tc)
Vgs(th) (Max) @ Id: 5.5V @ 135µA
Supplier Device Package: PG-TO220-3-1
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 16 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 420 pF @ 25 V
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SPP07N60S5 SPP07N60S5 Infineon Technologies Infineon-SPP_I07N60S5-DS-v02_07-en.pdf?fileId=db3a304412b407950112b42c81144713 Description: MOSFET N-CH 650V 7.3A TO220-3
Input Capacitance (Ciss) (Max) @ Vds: 970 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 35 nC @ 10 V
Drain to Source Voltage (Vdss): 650 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Obsolete
Supplier Device Package: PG-TO220-3-1
Vgs(th) (Max) @ Id: 5.5V @ 350µA
Power Dissipation (Max): 83W (Tc)
Rds On (Max) @ Id, Vgs: 600mOhm @ 4.6A, 10V
Current - Continuous Drain (Id) @ 25°C: 7.3A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-220-3
Packaging: Tube
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SPP08P06PBKSA1 SPP08P06PBKSA1 Infineon Technologies SPP08P06P.pdf Description: MOSFET P-CH 60V 8.8A TO220-3
Input Capacitance (Ciss) (Max) @ Vds: 420 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 15 nC @ 10 V
Drain to Source Voltage (Vdss): 60 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Obsolete
Supplier Device Package: PG-TO220-3
Vgs(th) (Max) @ Id: 4V @ 250µA
Power Dissipation (Max): 42W (Tc)
Rds On (Max) @ Id, Vgs: 300mOhm @ 6.2A, 10V
Current - Continuous Drain (Id) @ 25°C: 8.8A (Tc)
FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-220-3
Packaging: Tube
Produkt ist nicht verfügbar
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SPP11N60S5HKSA1 SPP11N60S5HKSA1 Infineon Technologies SPP_I11N60S5_Rev.2.4.pdf?folderId=db3a304412b407950112b408e8c90004&fileId=db3a304412b407950112b42d978048a7 Description: MOSFET N-CH 650V 11A TO220-3
Input Capacitance (Ciss) (Max) @ Vds: 1460 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 54 nC @ 10 V
Drain to Source Voltage (Vdss): 650 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Obsolete
Supplier Device Package: PG-TO220-3-1
Vgs(th) (Max) @ Id: 5.5V @ 500µA
Power Dissipation (Max): 125W (Tc)
Rds On (Max) @ Id, Vgs: 380mOhm @ 7A, 10V
Current - Continuous Drain (Id) @ 25°C: 11A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-220-3
Packaging: Tube
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SPP18P06PHKSA1 SPP18P06PHKSA1 Infineon Technologies SPP18P06P.pdf Description: MOSFET P-CH 60V 18.7A TO220-3
Input Capacitance (Ciss) (Max) @ Vds: 860 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 28 nC @ 10 V
Drain to Source Voltage (Vdss): 60 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Obsolete
Supplier Device Package: PG-TO220-3
Vgs(th) (Max) @ Id: 4V @ 1mA
Power Dissipation (Max): 81.1W (Ta)
Rds On (Max) @ Id, Vgs: 130mOhm @ 13.2A, 10V
Current - Continuous Drain (Id) @ 25°C: 18.7A (Ta)
FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-220-3
Packaging: Tube
Produkt ist nicht verfügbar
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SPP20N60S5 SPP20N60S5 Infineon Technologies SPP20N60S5_Rev.2.8.pdf?fileId=db3a30432313ff5e01237f9a14552fd9&folderId=db3a3043163797a6011638933eda014b description Description: MOSFET N-CH 650V 20A TO220-3
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 20A (Tc)
Rds On (Max) @ Id, Vgs: 190mOhm @ 13A, 10V
Power Dissipation (Max): 208W (Tc)
Vgs(th) (Max) @ Id: 5.5V @ 1mA
Supplier Device Package: PG-TO220-3-1
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 103 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3000 pF @ 25 V
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BAS21E6327HTSA1 BAS21E6327HTSA1 Infineon Technologies bas21series.pdf?folderId=db3a30431400ef6801141b5844e103ea&fileId=db3a30431400ef6801141bed353f040f Description: DIODE GEN PURP 200V 250MA SOT23
Current - Reverse Leakage @ Vr: 100 nA @ 200 V
Voltage - Forward (Vf) (Max) @ If: 1.25 V @ 200 mA
Voltage - DC Reverse (Vr) (Max): 200 V
Part Status: Last Time Buy
Operating Temperature - Junction: 150°C (Max)
Supplier Device Package: PG-SOT23
Current - Average Rectified (Io): 250mA
Capacitance @ Vr, F: 5pF @ 0V, 1MHz
Technology: Standard
Reverse Recovery Time (trr): 50 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: TO-236-3, SC-59, SOT-23-3
Packaging: Tape & Reel (TR)
auf Bestellung 93000 Stücke:
Lieferzeit 10-14 Tag (e)
3000+0.12 EUR
6000+0.11 EUR
9000+0.09 EUR
30000+0.088 EUR
75000+0.08 EUR
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IRDC3037A description IRU3037(A ,PbF).pdf
Hersteller: Infineon Technologies
Description: KIT W/IRU3037 PWM CTRL 400KHZ 8P
Part Status: Obsolete
Outputs and Type: 1, Non-Isolated
Main Purpose: DC/DC, Step Down
Supplied Contents: Board(s)
Utilized IC / Part: IRU3037A
Board Type: Fully Populated
Regulator Topology: Buck
Frequency - Switching: 400kHz
Voltage - Input: 4V ~ 25V
Packaging: Box
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IRDC3038 irdc3038.pdf
Hersteller: Infineon Technologies
Description: KIT W/IRU3038 PWM CTRL DDR 14-PI
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IRDC3046 irdc3046.pdf
Hersteller: Infineon Technologies
Description: KIT W/IRU3046 DUAL PWM LDO CTRLR
Outputs and Type: 2, Non-Isolated
Main Purpose: DC/DC, Step Down with LDO
Supplied Contents: Board(s)
Utilized IC / Part: IRU3046
Board Type: Fully Populated
Regulator Topology: Buck
Frequency - Switching: 200kHz
Current - Output: 16A, 2A
Voltage - Output: 1.5V, 2.5V
Packaging: Box
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IRDC3048 irdc3048.pdf
Hersteller: Infineon Technologies
Description: KIT W/IRU3048 DUAL PWM LDO CTRLR
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IRPLLNR4 lnr4.pdf
Hersteller: Infineon Technologies
Description: BALLAST UNIV INP FLUOR IR2166
Part Status: Obsolete
Supplied Contents: Board(s)
Utilized IC / Part: IR2166
Type: Opto/Lighting
Function: Ballast Control
Packaging: Box
Produkt ist nicht verfügbar
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IRDCIP1001-A irdcip1001-a.pdf
Hersteller: Infineon Technologies
Description: CONV SGL PHA SYNC BUCK 3.3-4.5V
Produkt ist nicht verfügbar
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IRDCIP1001-B irdcip1001-b.pdf
Hersteller: Infineon Technologies
Description: CONV SGL PHA SYNC BUCK 5-12V
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PEB20256E-V21 PEB20256M%20E.pdf
PEB20256E-V21
Hersteller: Infineon Technologies
Description: IC CONTROLLER INTERFACE 388-BGA
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PEB20320H-V34 PEB%2020320.pdf
PEB20320H-V34
Hersteller: Infineon Technologies
Description: IC TELECOM INTERFACE 160-MQFP
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PEB20321H-V22 PEB,%20PEF%2020321.pdf
PEB20321H-V22
Hersteller: Infineon Technologies
Description: IC TELECOM INTERFACE 160-MQFP
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PEB20534H10-V21 PEB,PEF%2020534.pdf
Hersteller: Infineon Technologies
Description: IC INTERFACE SPECIALIZED 208FQFP
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PEB20534H52-V2.1 PEB,PEF%2020534.pdf
Hersteller: Infineon Technologies
Description: IC INTERFACE SPECIALIZED 208FQFP
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PEB2086H-V14TR PEB2085,86.pdf
PEB2086H-V14TR
Hersteller: Infineon Technologies
Description: IC TELECOM INTERFACE MQFP-64
Supplier Device Package: P-MQFP-64
Current - Supply: 22mA
Voltage - Supply: 4.75V ~ 5.25V
Operating Temperature: 0°C ~ 70°C
Interface: S-Bus
Mounting Type: Surface Mount
Package / Case: 64-QFP
Packaging: Tape & Reel (TR)
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PEB22504HT-V11 PEB 22504.pdf
PEB22504HT-V11
Hersteller: Infineon Technologies
Description: IC INTERFACE SPECIALIZED 100TQFP
Supplier Device Package: PG-TQFP-100-3
Applications: Wireless
Voltage - Supply: 3.13V ~ 3.46V
Mounting Type: Surface Mount
Package / Case: 100-LQFP
Packaging: Tray
Produkt ist nicht verfügbar
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PEB2255H-V13 PEB%202255.pdf
PEB2255H-V13
Hersteller: Infineon Technologies
Description: IC INTERFACE SPECIALIZED 80MQFP
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PEB2256H-V12 PEB2256HT_E.pdf
PEB2256H-V12
Hersteller: Infineon Technologies
Description: IC INTERFACE SPECIALIZED 80MQFP
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PEB2447H-V12 PEB2447.pdf
PEB2447H-V12
Hersteller: Infineon Technologies
Description: IC INTERFACE SPECIALIZED 100MQFP
Part Status: Obsolete
Supplier Device Package: PG-MQFP-100-2
Applications: Memory Time Switch
Mounting Type: Surface Mount
Package / Case: 100-BQFP
Packaging: Tray
Produkt ist nicht verfügbar
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PEB3265H-V13 PEB3264%28-2%29%2C%203265.pdf
PEB3265H-V13
Hersteller: Infineon Technologies
Description: IC TELECOM INTERFACE MQFP-64
Produkt ist nicht verfügbar
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PEF22810T-V21TR 10BaseS%20Product%20Brief.pdf
PEF22810T-V21TR
Hersteller: Infineon Technologies
Description: IC CHIPSET VDSL-L 4BAND 8-PDSO
Produkt ist nicht verfügbar
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PEF3452H-V13 PEF3452.pdf
PEF3452H-V13
Hersteller: Infineon Technologies
Description: IC TELECOM INTERFACE MQFP-44
Packaging: Tray
Package / Case: 44-QFP
Mounting Type: Surface Mount
Function: Line Interface Unit (LIU)
Interface: DS3, E3, STS-1
Operating Temperature: -40°C ~ 85°C
Voltage - Supply: 3.13V ~ 3.46V
Current - Supply: 155mA
Supplier Device Package: PG-MQFP-44-2
Part Status: Obsolete
Number of Circuits: 1
Produkt ist nicht verfügbar
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PSB2163T-V31TR PSB2163.pdf
PSB2163T-V31TR
Hersteller: Infineon Technologies
Description: IC TELECOM INTERFACE 28-PDSO
Packaging: Tape & Reel (TR)
Package / Case: 28-SOIC (0.295", 7.50mm Width)
Mounting Type: Surface Mount
Function: CODEC Filter
Interface: IOM-2, PCI, Serial
Operating Temperature: -25°C ~ 80°C
Voltage - Supply: 5V
Current - Supply: 900µA
Supplier Device Package: PG-DSO-28
Number of Circuits: 1
Power (Watts): 1 mW
Produkt ist nicht verfügbar
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PXB4220E-V32 PXB4219E-21E.pdf
PXB4220E-V32
Hersteller: Infineon Technologies
Description: IC CHIPSET 8 E1/T1 LINE 256-BGA
auf Bestellung 35 Stücke:
Lieferzeit 10-14 Tag (e)
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PXB4220E-V33 PXB4219E-21E.pdf
PXB4220E-V33
Hersteller: Infineon Technologies
Description: IC CHIPSET 8 E1/T1 LINE 256-BGA
auf Bestellung 35 Stücke:
Lieferzeit 10-14 Tag (e)
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SAB82525H-V21 SAB%2CSAF%2082525%2C26.pdf
SAB82525H-V21
Hersteller: Infineon Technologies
Description: IC INTERFACE SPECIALIZED 44MQFP
Packaging: Tube
Package / Case: 44-QFP
Mounting Type: Surface Mount
Interface: Serial
Voltage - Supply: 4.75V ~ 5.25V
Supplier Device Package: PG-MQFP-44-2
Part Status: Obsolete
Produkt ist nicht verfügbar
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SAB82525N-V21TR SAB%2CSAF%2082525%2C26.pdf
SAB82525N-V21TR
Hersteller: Infineon Technologies
Description: IC INTERFACE SPECIALIZED 44PLCC
Packaging: Tape & Reel (TR)
Package / Case: 44-LCC (J-Lead)
Mounting Type: Surface Mount
Interface: Serial
Voltage - Supply: 4.75V ~ 5.25V
Supplier Device Package: P-LCC-44-1
Part Status: Obsolete
Produkt ist nicht verfügbar
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SAB82526N-V21 SAB%2CSAF%2082525%2C26.pdf
SAB82526N-V21
Hersteller: Infineon Technologies
Description: IC INTERFACE SPECIALIZED 44PLCC
Packaging: Tube
Package / Case: 44-LCC (J-Lead)
Mounting Type: Surface Mount
Interface: Serial
Voltage - Supply: 4.75V ~ 5.25V
Supplier Device Package: P-LCC-44-1
Part Status: Obsolete
Produkt ist nicht verfügbar
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SAB82532H10V32A SAB,SAF82532.pdf
SAB82532H10V32A
Hersteller: Infineon Technologies
Description: IC INTERFACE SPECIALIZED 80MQFP
Supplier Device Package: P-MQFP-80-1
Voltage - Supply: 4.75V ~ 5.25V
Interface: Serial
Mounting Type: Surface Mount
Package / Case: 80-QFP
Packaging: Tube
Produkt ist nicht verfügbar
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SAE800 SAE_800.pdf
SAE800
Hersteller: Infineon Technologies
Description: IC AUDIO TONE PROCESSOR 8DIP
Number of Channels: 1
Part Status: Obsolete
Supplier Device Package: PG-DIP-8
Applications: Audio Systems
Specifications: 100kHz
Voltage - Supply: 2.8V ~ 18V
Operating Temperature: -25°C ~ 125°C (TJ)
Interface: Logic
Function: Audio Tone Processor
Mounting Type: Through Hole
Package / Case: 8-DIP (0.300", 7.62mm)
Packaging: Tube
Produkt ist nicht verfügbar
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SAF82525N-V21 SAB%2CSAF%2082525%2C26.pdf
SAF82525N-V21
Hersteller: Infineon Technologies
Description: IC INTERFACE SPECIALIZED 44PLCC
Packaging: Tube
Package / Case: 44-LCC (J-Lead)
Mounting Type: Surface Mount
Interface: Serial
Voltage - Supply: 4.75V ~ 5.25V
Supplier Device Package: P-LCC-44-1
Part Status: Obsolete
Produkt ist nicht verfügbar
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SAF82532N10V32A SAB%2CSAF82532.pdf
Hersteller: Infineon Technologies
Description: IC INTERFACE SPECIALIZED 68PLCC
Packaging: Tube
Package / Case: 68-LCC (J-Lead)
Mounting Type: Surface Mount
Interface: Serial
Voltage - Supply: 4.75V ~ 5.25V
Supplier Device Package: P-LCC-68
Part Status: Obsolete
Produkt ist nicht verfügbar
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TCA785 tca785.pdf
TCA785
Hersteller: Infineon Technologies
Description: IC PHASE CONTROL 250MA OUT 16DIP
Part Status: Obsolete
Supplier Device Package: PG-DIP-16-1
Current - Supply: 6.5mA
Applications: Multiphase Controller
Voltage - Supply: 8V ~ 18V
Operating Temperature: -25°C ~ 85°C
Mounting Type: Through Hole
Package / Case: 16-DIP (0.300", 7.62mm)
Packaging: Tube
Produkt ist nicht verfügbar
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PEB2075N-V13TR PEB2075.pdf
PEB2075N-V13TR
Hersteller: Infineon Technologies
Description: IC CONTROLLER D-CH EXCH 44-PLCC
Part Status: Obsolete
Supplier Device Package: P-LCC-44
Current - Supply: 10mA
Voltage - Supply: 4.75V ~ 5.25V
Operating Temperature: 0°C ~ 70°C
Interface: PCM
Mounting Type: Surface Mount
Package / Case: 44-LCC (J-Lead)
Packaging: Cut Tape (CT)
Produkt ist nicht verfügbar
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SAB82525N-V21TR SAB%2CSAF%2082525%2C26.pdf
SAB82525N-V21TR
Hersteller: Infineon Technologies
Description: IC INTERFACE SPECIALIZED 44PLCC
Packaging: Cut Tape (CT)
Package / Case: 44-LCC (J-Lead)
Mounting Type: Surface Mount
Interface: Serial
Voltage - Supply: 4.75V ~ 5.25V
Supplier Device Package: P-LCC-44-1
Part Status: Obsolete
Produkt ist nicht verfügbar
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PEF22810T-V21TR 10BaseS%20Product%20Brief.pdf
PEF22810T-V21TR
Hersteller: Infineon Technologies
Description: IC CHIPSET VDSL-L 4BAND 8-PDSO
Produkt ist nicht verfügbar
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BF998E6327HTSA1 BF998_Rev2007.pdf
BF998E6327HTSA1
Hersteller: Infineon Technologies
Description: RF MOSFET 8V SOT143
Packaging: Tape & Reel (TR)
Package / Case: TO-253-4, TO-253AA
Current Rating (Amps): 30mA
Mounting Type: Surface Mount
Frequency: 45MHz
Configuration: N-Channel
Gain: 28dB
Technology: MOSFET (Metal Oxide)
Noise Figure: 2.8dB
Supplier Device Package: PG-SOT-143-3D
Part Status: Last Time Buy
Voltage - Rated: 12 V
Voltage - Test: 8 V
Current - Test: 10 mA
Produkt ist nicht verfügbar
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BSS119E6327 BSS119_Rev1.3.pdf
BSS119E6327
Hersteller: Infineon Technologies
Description: MOSFET N-CH 100V 170MA SOT23-3
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 170mA (Ta)
Rds On (Max) @ Id, Vgs: 6Ohm @ 170mA, 10V
Power Dissipation (Max): 360mW (Ta)
Vgs(th) (Max) @ Id: 2.3V @ 50µA
Supplier Device Package: PG-SOT23
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 2.5 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 78 pF @ 25 V
Produkt ist nicht verfügbar
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BSP123L6327HTSA1 BSP123_Rev2010.pdf
BSP123L6327HTSA1
Hersteller: Infineon Technologies
Description: MOSFET N-CH 100V 370MA SOT223-4
Input Capacitance (Ciss) (Max) @ Vds: 70 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 2.4 nC @ 10 V
Drain to Source Voltage (Vdss): 100 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 2.8V, 10V
Part Status: Obsolete
Supplier Device Package: PG-SOT223-4
Qualification: AEC-Q101
Grade: Automotive
Vgs(th) (Max) @ Id: 1.8V @ 50µA
Power Dissipation (Max): 1.79W (Ta)
Rds On (Max) @ Id, Vgs: 6Ohm @ 370mA, 10V
Current - Continuous Drain (Id) @ 25°C: 370mA (Ta)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-261-4, TO-261AA
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar
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BSP129E6327 Infineon-BSP129-DS-v01_42-en.pdf?fileId=db3a30433c1a8752013c1fc296d2395f
BSP129E6327
Hersteller: Infineon Technologies
Description: MOSFET N-CH 240V 350MA SOT223-4
Packaging: Tape & Reel (TR)
Package / Case: TO-261-4, TO-261AA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel, Depletion Mode
Current - Continuous Drain (Id) @ 25°C: 350mA (Ta)
Rds On (Max) @ Id, Vgs: 6Ohm @ 350mA, 10V
Power Dissipation (Max): 1.8W (Ta)
Vgs(th) (Max) @ Id: 1V @ 108µA
Supplier Device Package: PG-SOT223-4
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 0V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 240 V
Gate Charge (Qg) (Max) @ Vgs: 5.7 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 108 pF @ 25 V
Grade: Automotive
Qualification: AEC-Q101
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BSP295E6327 Infineon-BSP295-DS-v02_03-en.pdf?folderId=5546d4694909da4801490a07012f053b&fileId=db3a30433b47825b013b5fc5eed1573f
BSP295E6327
Hersteller: Infineon Technologies
Description: MOSFET N-CH 60V 1.8A SOT223-4
Packaging: Tape & Reel (TR)
Package / Case: TO-261-4, TO-261AA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 1.8A (Ta)
Rds On (Max) @ Id, Vgs: 300mOhm @ 1.8A, 10V
Power Dissipation (Max): 1.8W (Ta)
Vgs(th) (Max) @ Id: 1.8V @ 400µA
Supplier Device Package: PG-SOT223-4
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 17 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 368 pF @ 25 V
Grade: Automotive
Qualification: AEC-Q101
Produkt ist nicht verfügbar
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BSP296E6327 BSP296.pdf
BSP296E6327
Hersteller: Infineon Technologies
Description: MOSFET N-CH 100V 1.1A SOT223-4
Packaging: Tape & Reel (TR)
Package / Case: TO-261-4, TO-261AA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 1.1A (Ta)
Rds On (Max) @ Id, Vgs: 700mOhm @ 1.1A, 10V
Power Dissipation (Max): 1.79W (Ta)
Vgs(th) (Max) @ Id: 1.8V @ 400µA
Supplier Device Package: PG-SOT223-4
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 17.2 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 364 pF @ 25 V
Grade: Automotive
Qualification: AEC-Q101
Produkt ist nicht verfügbar
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BSP315P-E6327 BSP315P.pdf
BSP315P-E6327
Hersteller: Infineon Technologies
Description: MOSFET P-CH 60V 1.17A SOT223-4
Input Capacitance (Ciss) (Max) @ Vds: 160 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 7.8 nC @ 10 V
Drain to Source Voltage (Vdss): 60 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Supplier Device Package: PG-SOT223-4
Vgs(th) (Max) @ Id: 2V @ 160µA
Power Dissipation (Max): 1.8W (Ta)
Rds On (Max) @ Id, Vgs: 800mOhm @ 1.17A, 10V
Current - Continuous Drain (Id) @ 25°C: 1.17A (Ta)
FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 155°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-261-4, TO-261AA
Packaging: Tape & Reel (TR)
Qualification: AEC-Q101
Grade: Automotive
Produkt ist nicht verfügbar
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BSP88E6327 BSP88.pdf
BSP88E6327
Hersteller: Infineon Technologies
Description: MOSFET N-CH 240V 350MA SOT223-4
Input Capacitance (Ciss) (Max) @ Vds: 95 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 6.8 nC @ 10 V
Drain to Source Voltage (Vdss): 240 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 2.8V, 4.5V
Part Status: Obsolete
Supplier Device Package: PG-SOT223-4
Vgs(th) (Max) @ Id: 1.4V @ 108µA
Power Dissipation (Max): 1.7W (Ta)
Rds On (Max) @ Id, Vgs: 6Ohm @ 350mA, 10V
Current - Continuous Drain (Id) @ 25°C: 350mA (Ta)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-261-4, TO-261AA
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar
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BSS123E6327 DS_448_BSS123.pdf
BSS123E6327
Hersteller: Infineon Technologies
Description: MOSFET N-CH 100V 170MA SOT23-3
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 170mA (Ta)
Rds On (Max) @ Id, Vgs: 6Ohm @ 170mA, 10V
Power Dissipation (Max): 360mW (Ta)
Vgs(th) (Max) @ Id: 1.8V @ 50µA
Supplier Device Package: PG-SOT23
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 2.67 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 69 pF @ 25 V
Grade: Automotive
Qualification: AEC-Q101
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BSS131E6327 BSS131.pdf
BSS131E6327
Hersteller: Infineon Technologies
Description: MOSFET N-CH 240V 110MA SOT23-3
Input Capacitance (Ciss) (Max) @ Vds: 77 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 3.1 nC @ 10 V
Drain to Source Voltage (Vdss): 240 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Part Status: Obsolete
Supplier Device Package: PG-SOT23
Vgs(th) (Max) @ Id: 1.8V @ 56µA
Power Dissipation (Max): 360mW (Ta)
Rds On (Max) @ Id, Vgs: 14Ohm @ 100mA, 10V
Current - Continuous Drain (Id) @ 25°C: 110mA (Ta)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-236-3, SC-59, SOT-23-3
Packaging: Tape & Reel (TR)
Qualification: AEC-Q101
Grade: Automotive
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BSS138N-E6327 BSS138N.pdf
BSS138N-E6327
Hersteller: Infineon Technologies
Description: MOSFET N-CH 60V 230MA SOT23-3
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 230mA (Ta)
Rds On (Max) @ Id, Vgs: 3.5Ohm @ 230mA, 10V
Power Dissipation (Max): 360mW (Ta)
Vgs(th) (Max) @ Id: 1.4V @ 250µA
Supplier Device Package: PG-SOT23
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 1.4 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 41 pF @ 25 V
Grade: Automotive
Qualification: AEC-Q101
Produkt ist nicht verfügbar
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BSS84P-E6327 BSS84P.pdf
BSS84P-E6327
Hersteller: Infineon Technologies
Description: MOSFET P-CH 60V 170MA SOT23-3
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 170mA (Ta)
Rds On (Max) @ Id, Vgs: 8Ohm @ 170mA, 10V
Power Dissipation (Max): 360mW (Ta)
Vgs(th) (Max) @ Id: 2V @ 20µA
Supplier Device Package: PG-SOT23
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 1.5 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 19 pF @ 25 V
Grade: Automotive
Qualification: AEC-Q101
Produkt ist nicht verfügbar
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BSS87E6327 Infineon-BSS87-DS-v01_42-en.pdf?fileId=db3a30433b47825b013b60b6e9436ddb
BSS87E6327
Hersteller: Infineon Technologies
Description: MOSFET N-CH 240V 260MA SOT89-4
Packaging: Tape & Reel (TR)
Package / Case: TO-243AA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 260mA (Ta)
Rds On (Max) @ Id, Vgs: 6Ohm @ 260mA, 10V
Power Dissipation (Max): 1W (Ta)
Vgs(th) (Max) @ Id: 1.8V @ 108µA
Supplier Device Package: PG-SOT89-4-2
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 240 V
Gate Charge (Qg) (Max) @ Vgs: 5.5 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 97 pF @ 25 V
Grade: Automotive
Qualification: AEC-Q101
Produkt ist nicht verfügbar
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BUP213 description bup213.pdf
BUP213
Hersteller: Infineon Technologies
Description: IGBT 1200V 32A 200W TO220
Power - Max: 200 W
Current - Collector Pulsed (Icm): 64 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Current - Collector (Ic) (Max): 32 A
Part Status: Obsolete
Test Condition: 600V, 15A, 82Ohm, 15V
Td (on/off) @ 25°C: 70ns/400ns
Supplier Device Package: TO-220AB
Vce(on) (Max) @ Vge, Ic: 3.2V @ 15V, 15A
Input Type: Standard
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-220-3
Packaging: Tube
Produkt ist nicht verfügbar
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BUZ30A description BUZ30A.pdf
BUZ30A
Hersteller: Infineon Technologies
Description: MOSFET N-CH 200V 21A TO220-3
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 21A (Tc)
Rds On (Max) @ Id, Vgs: 130mOhm @ 13.5A, 10V
Power Dissipation (Max): 125W (Tc)
Vgs(th) (Max) @ Id: 4V @ 1mA
Supplier Device Package: PG-TO220-3-1
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 200 V
Input Capacitance (Ciss) (Max) @ Vds: 1900 pF @ 25 V
Produkt ist nicht verfügbar
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BUZ73 BUZ73.pdf
BUZ73
Hersteller: Infineon Technologies
Description: MOSFET N-CH 200V 7A TO220-3
Input Capacitance (Ciss) (Max) @ Vds: 530 pF @ 25 V
Drain to Source Voltage (Vdss): 200 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Supplier Device Package: PG-TO220-3
Vgs(th) (Max) @ Id: 4V @ 1mA
Power Dissipation (Max): 40W (Tc)
Rds On (Max) @ Id, Vgs: 400mOhm @ 4.5A, 10V
Current - Continuous Drain (Id) @ 25°C: 7A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-220-3
Packaging: Tube
Produkt ist nicht verfügbar
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BUZ80A BUZ80A.pdf
BUZ80A
Hersteller: Infineon Technologies
Description: MOSFET N-CH 800V 3.6A TO220AB
Rds On (Max) @ Id, Vgs: 3Ohm @ 2A, 10V
Current - Continuous Drain (Id) @ 25°C: 3.6A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-220-3
Packaging: Tube
Input Capacitance (Ciss) (Max) @ Vds: 1350 pF @ 25 V
Drain to Source Voltage (Vdss): 800 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Discontinued at Digi-Key
Supplier Device Package: TO-220AB
Vgs(th) (Max) @ Id: 4V @ 1mA
Power Dissipation (Max): 100W (Tc)
Produkt ist nicht verfügbar
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SGP30N60XKSA1 SGP_B_W30N60_3.pdf
SGP30N60XKSA1
Hersteller: Infineon Technologies
Description: IGBT 600V 41A 250W TO263
Produkt ist nicht verfügbar
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SPD07N60S5 SPD_U07N60S5_Rev.2.4.pdf?folderId=db3a304412b407950112b408e8c90004&fileId=db3a304412b407950112b42c8df34723
SPD07N60S5
Hersteller: Infineon Technologies
Description: MOSFET N-CH 600V 7.3A TO252-3
Input Capacitance (Ciss) (Max) @ Vds: 970 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 35 nC @ 10 V
Drain to Source Voltage (Vdss): 600 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Supplier Device Package: PG-TO252-3-11
Vgs(th) (Max) @ Id: 5.5V @ 350µA
Power Dissipation (Max): 83W (Tc)
Rds On (Max) @ Id, Vgs: 600mOhm @ 4.6A, 10V
Current - Continuous Drain (Id) @ 25°C: 7.3A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar
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SPP03N60S5HKSA1 SPP03N60S5_Rev.2.4.pdf?folderId=db3a304412b407950112b408e8c90004&fileId=db3a304412b407950112b42c7ad9470b
SPP03N60S5HKSA1
Hersteller: Infineon Technologies
Description: MOSFET N-CH 600V 3.2A TO220-3
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 3.2A (Tc)
Rds On (Max) @ Id, Vgs: 1.4Ohm @ 2A, 10V
Power Dissipation (Max): 38W (Tc)
Vgs(th) (Max) @ Id: 5.5V @ 135µA
Supplier Device Package: PG-TO220-3-1
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 16 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 420 pF @ 25 V
Produkt ist nicht verfügbar
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SPP07N60S5 Infineon-SPP_I07N60S5-DS-v02_07-en.pdf?fileId=db3a304412b407950112b42c81144713
SPP07N60S5
Hersteller: Infineon Technologies
Description: MOSFET N-CH 650V 7.3A TO220-3
Input Capacitance (Ciss) (Max) @ Vds: 970 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 35 nC @ 10 V
Drain to Source Voltage (Vdss): 650 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Obsolete
Supplier Device Package: PG-TO220-3-1
Vgs(th) (Max) @ Id: 5.5V @ 350µA
Power Dissipation (Max): 83W (Tc)
Rds On (Max) @ Id, Vgs: 600mOhm @ 4.6A, 10V
Current - Continuous Drain (Id) @ 25°C: 7.3A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-220-3
Packaging: Tube
Produkt ist nicht verfügbar
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SPP08P06PBKSA1 SPP08P06P.pdf
SPP08P06PBKSA1
Hersteller: Infineon Technologies
Description: MOSFET P-CH 60V 8.8A TO220-3
Input Capacitance (Ciss) (Max) @ Vds: 420 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 15 nC @ 10 V
Drain to Source Voltage (Vdss): 60 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Obsolete
Supplier Device Package: PG-TO220-3
Vgs(th) (Max) @ Id: 4V @ 250µA
Power Dissipation (Max): 42W (Tc)
Rds On (Max) @ Id, Vgs: 300mOhm @ 6.2A, 10V
Current - Continuous Drain (Id) @ 25°C: 8.8A (Tc)
FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-220-3
Packaging: Tube
Produkt ist nicht verfügbar
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SPP11N60S5HKSA1 SPP_I11N60S5_Rev.2.4.pdf?folderId=db3a304412b407950112b408e8c90004&fileId=db3a304412b407950112b42d978048a7
SPP11N60S5HKSA1
Hersteller: Infineon Technologies
Description: MOSFET N-CH 650V 11A TO220-3
Input Capacitance (Ciss) (Max) @ Vds: 1460 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 54 nC @ 10 V
Drain to Source Voltage (Vdss): 650 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Obsolete
Supplier Device Package: PG-TO220-3-1
Vgs(th) (Max) @ Id: 5.5V @ 500µA
Power Dissipation (Max): 125W (Tc)
Rds On (Max) @ Id, Vgs: 380mOhm @ 7A, 10V
Current - Continuous Drain (Id) @ 25°C: 11A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-220-3
Packaging: Tube
Produkt ist nicht verfügbar
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SPP18P06PHKSA1 SPP18P06P.pdf
SPP18P06PHKSA1
Hersteller: Infineon Technologies
Description: MOSFET P-CH 60V 18.7A TO220-3
Input Capacitance (Ciss) (Max) @ Vds: 860 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 28 nC @ 10 V
Drain to Source Voltage (Vdss): 60 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Obsolete
Supplier Device Package: PG-TO220-3
Vgs(th) (Max) @ Id: 4V @ 1mA
Power Dissipation (Max): 81.1W (Ta)
Rds On (Max) @ Id, Vgs: 130mOhm @ 13.2A, 10V
Current - Continuous Drain (Id) @ 25°C: 18.7A (Ta)
FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-220-3
Packaging: Tube
Produkt ist nicht verfügbar
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SPP20N60S5 description SPP20N60S5_Rev.2.8.pdf?fileId=db3a30432313ff5e01237f9a14552fd9&folderId=db3a3043163797a6011638933eda014b
SPP20N60S5
Hersteller: Infineon Technologies
Description: MOSFET N-CH 650V 20A TO220-3
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 20A (Tc)
Rds On (Max) @ Id, Vgs: 190mOhm @ 13A, 10V
Power Dissipation (Max): 208W (Tc)
Vgs(th) (Max) @ Id: 5.5V @ 1mA
Supplier Device Package: PG-TO220-3-1
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 103 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3000 pF @ 25 V
Produkt ist nicht verfügbar
Mindestbestellmenge: 500 Stücke
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BAS21E6327HTSA1 bas21series.pdf?folderId=db3a30431400ef6801141b5844e103ea&fileId=db3a30431400ef6801141bed353f040f
BAS21E6327HTSA1
Hersteller: Infineon Technologies
Description: DIODE GEN PURP 200V 250MA SOT23
Current - Reverse Leakage @ Vr: 100 nA @ 200 V
Voltage - Forward (Vf) (Max) @ If: 1.25 V @ 200 mA
Voltage - DC Reverse (Vr) (Max): 200 V
Part Status: Last Time Buy
Operating Temperature - Junction: 150°C (Max)
Supplier Device Package: PG-SOT23
Current - Average Rectified (Io): 250mA
Capacitance @ Vr, F: 5pF @ 0V, 1MHz
Technology: Standard
Reverse Recovery Time (trr): 50 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: TO-236-3, SC-59, SOT-23-3
Packaging: Tape & Reel (TR)
auf Bestellung 93000 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
3000+0.12 EUR
6000+0.11 EUR
9000+0.09 EUR
30000+0.088 EUR
75000+0.08 EUR
Mindestbestellmenge: 3000 Stücke
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