Produkte > INFINEON TECHNOLOGIES > Alle Produkte des Herstellers INFINEON TECHNOLOGIES (132791) > Seite 2200 nach 2214
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| 1EDI2010ASXUMA1 | INFINEON TECHNOLOGIES |
 Category: MOSFET/IGBT driversDescription: IC: driver; single transistor; high-side,IGBT gate driver; SPI Technology: EiceDRIVER™ Case: PG-DSO-36 Mounting: SMD Kind of package: reel; tape Output current: -1...1A Topology: single transistor Voltage class: 1.2kV Supply voltage: 4.65...5.5V; 13...18V Type of integrated circuit: driver Interface: SPI Number of channels: 1 Integrated circuit features: galvanically isolated Kind of integrated circuit: high-side; IGBT gate driver |
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1EDI20I12AFXUMA1 | INFINEON TECHNOLOGIES |
Category: MOSFET/IGBT drivers Description: IC: driver; single transistor; high-side,IGBT gate driver; -2÷2A Technology: EiceDRIVER™ Case: PG-DSO-8 Mounting: SMD Kind of package: reel; tape Output current: -2...2A Topology: single transistor Voltage class: 1.2kV Supply voltage: 3.1...17V; 13...35V Type of integrated circuit: driver Number of channels: 1 Integrated circuit features: galvanically isolated Kind of integrated circuit: high-side; IGBT gate driver |
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1EDI20I12MFXUMA1 | INFINEON TECHNOLOGIES |
Category: MOSFET/IGBT drivers Description: IC: driver; single transistor; high-side,IGBT gate driver; -2÷2A Technology: EiceDRIVER™ Case: PG-DSO-8 Mounting: SMD Kind of package: reel; tape Output current: -2...2A Topology: single transistor Voltage class: 1.2kV Supply voltage: 3.1...17V; 13...35V Type of integrated circuit: driver Number of channels: 1 Integrated circuit features: active Miller clamp; galvanically isolated Kind of integrated circuit: high-side; IGBT gate driver |
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1EDI20N12AFXUMA1 | INFINEON TECHNOLOGIES |
Category: MOSFET/IGBT drivers Description: IC: driver; single transistor; high-side,gate driver; PG-DSO-8 Technology: EiceDRIVER™; GaN Case: PG-DSO-8 Mounting: SMD Kind of package: reel; tape Output current: -2...2A Topology: single transistor Kind of integrated circuit: gate driver; high-side Voltage class: 1.2kV Supply voltage: 3.1...17V; 13...35V Type of integrated circuit: driver Number of channels: 1 Integrated circuit features: galvanically isolated |
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| IRFR4510TRPBF | INFINEON TECHNOLOGIES |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 100V; 45A; Idm: 252A; 143W; DPAK Type of transistor: N-MOSFET Technology: HEXFET® Polarisation: unipolar Drain-source voltage: 100V Drain current: 45A Pulsed drain current: 252A Power dissipation: 143W Case: DPAK Gate-source voltage: ±20V On-state resistance: 13.9mΩ Mounting: SMD Kind of channel: enhanced |
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BAT6405WH6327XTSA1 | INFINEON TECHNOLOGIES |
Category: SMD Schottky diodes Description: Diode: Schottky rectifying; SMD; 40V; 0.25A; SOT323; 250mW Type of diode: Schottky rectifying Mounting: SMD Max. off-state voltage: 40V Load current: 0.25A Semiconductor structure: common cathode; double Case: SOT323 Max. forward impulse current: 0.8A Power dissipation: 0.25W |
auf Bestellung 2500 Stücke: Lieferzeit 14-21 Tag (e) |
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IRLS3036TRL7PP | INFINEON TECHNOLOGIES |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 60V; 210A; Idm: 1kA; 380W; D2PAK-7 Type of transistor: N-MOSFET Technology: HEXFET® Polarisation: unipolar Drain-source voltage: 60V Drain current: 210A Pulsed drain current: 1kA Power dissipation: 380W Case: D2PAK-7 Gate-source voltage: ±16V On-state resistance: 1.9mΩ Mounting: SMD Kind of channel: enhanced |
auf Bestellung 745 Stücke: Lieferzeit 14-21 Tag (e) |
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IRLS3036TRLPBF | INFINEON TECHNOLOGIES |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 60V; 270A; 380W; D2PAK Type of transistor: N-MOSFET Technology: HEXFET® Polarisation: unipolar Drain-source voltage: 60V Drain current: 270A Power dissipation: 380W Case: D2PAK Mounting: SMD Kind of package: reel Kind of channel: enhanced Features of semiconductor devices: logic level |
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| ILD8150EXUMA1 | INFINEON TECHNOLOGIES |
Category: LED drivers Description: IC: driver; buck; LED controller; PG-DSO-8; 1.5A; Ch: 1; 8÷80V Type of integrated circuit: driver Topology: buck Kind of integrated circuit: LED controller Case: PG-DSO-8 Output current: 1.5A Number of channels: 1 Integrated circuit features: linear dimming; PWM Mounting: SMD Operating voltage: 8...80V |
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BSC0501NSIATMA1 | INFINEON TECHNOLOGIES |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 30V; 100A; 50W; PG-TDSON-8 Technology: OptiMOS™ 5 Case: PG-TDSON-8 Mounting: SMD On-state resistance: 1.9mΩ Power dissipation: 50W Drain current: 100A Kind of channel: enhanced Drain-source voltage: 30V Type of transistor: N-MOSFET Gate-source voltage: ±20V Polarisation: unipolar |
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BSC0503NSIATMA1 | INFINEON TECHNOLOGIES |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 30V; 100A; 50W; PG-TDSON-8 Technology: OptiMOS™ 5 Case: PG-TDSON-8 Mounting: SMD On-state resistance: 1.9mΩ Power dissipation: 50W Drain current: 100A Kind of channel: enhanced Drain-source voltage: 30V Type of transistor: N-MOSFET Gate-source voltage: ±20V Polarisation: unipolar |
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BSC0902NSIATMA1 | INFINEON TECHNOLOGIES |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 30V; 89A; 48W; PG-TDSON-8 Type of transistor: N-MOSFET Technology: OptiMOS™ Polarisation: unipolar Drain-source voltage: 30V Drain current: 89A Power dissipation: 48W Case: PG-TDSON-8 Gate-source voltage: ±20V On-state resistance: 2.8mΩ Mounting: SMD Kind of channel: enhanced |
auf Bestellung 4625 Stücke: Lieferzeit 14-21 Tag (e) |
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BSC0904NSIATMA1 | INFINEON TECHNOLOGIES |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 30V; 66A; 37W; PG-TDSON-8 Type of transistor: N-MOSFET Technology: OptiMOS™ Polarisation: unipolar Drain-source voltage: 30V Drain current: 66A Power dissipation: 37W Case: PG-TDSON-8 Gate-source voltage: ±20V On-state resistance: 3.7mΩ Mounting: SMD Kind of channel: enhanced |
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BSZ0902NSIATMA1 | INFINEON TECHNOLOGIES |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 30V; 40A; 48W; PG-TSDSON-8 Type of transistor: N-MOSFET Technology: OptiMOS™ Polarisation: unipolar Drain-source voltage: 30V Drain current: 40A Power dissipation: 48W Case: PG-TSDSON-8 Gate-source voltage: ±20V On-state resistance: 2.8mΩ Mounting: SMD Kind of channel: enhanced |
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IPD60R650CEAUMA1 | INFINEON TECHNOLOGIES |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 600V; 6.2A; Idm: 19A; 82W Type of transistor: N-MOSFET Technology: CoolMOS™ CE Polarisation: unipolar Drain-source voltage: 600V Drain current: 6.2A Pulsed drain current: 19A Power dissipation: 82W Case: PG-TO252-3 Gate-source voltage: ±20V On-state resistance: 0.65Ω Mounting: SMD Gate charge: 20.5nC Kind of channel: enhanced |
auf Bestellung 2221 Stücke: Lieferzeit 14-21 Tag (e) |
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IRG4PSH71KDPBF | INFINEON TECHNOLOGIES |
Category: THT IGBT transistors Description: Transistor: IGBT; 1.2kV; 78A; 350W; SUPER247 Type of transistor: IGBT Collector-emitter voltage: 1.2kV Collector current: 78A Power dissipation: 350W Case: SUPER247 Mounting: THT Kind of package: tube Features of semiconductor devices: integrated anti-parallel diode |
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IRF7831TRPBF | INFINEON TECHNOLOGIES |
 Category: SMD N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 30V; 21A; 2.5W; SO8 Type of transistor: N-MOSFET Technology: HEXFET® Polarisation: unipolar Drain-source voltage: 30V Drain current: 21A Power dissipation: 2.5W Case: SO8 Mounting: SMD Kind of package: reel Kind of channel: enhanced |
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IFX21401MBHTSA1 | INFINEON TECHNOLOGIES |
Category: LDO regulated voltage regulators Description: IC: voltage regulator; LDO,adjustable; 0.05A; PG-SCT595; SMD Type of integrated circuit: voltage regulator Kind of voltage regulator: adjustable; LDO Voltage drop: 0.3V Output current: 50mA Case: PG-SCT595 Mounting: SMD Kind of package: reel; tape Operating temperature: -40...125°C Input voltage: 4...40V |
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IRF4104PBF | INFINEON TECHNOLOGIES |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 40V; 120A; 140W; TO220AB Type of transistor: N-MOSFET Technology: HEXFET® Polarisation: unipolar Drain-source voltage: 40V Drain current: 120A Power dissipation: 140W Case: TO220AB Gate-source voltage: ±20V On-state resistance: 5.5mΩ Mounting: THT Gate charge: 68nC Kind of package: tube Kind of channel: enhanced |
auf Bestellung 77 Stücke: Lieferzeit 14-21 Tag (e) |
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IRF4104SPBF | INFINEON TECHNOLOGIES |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 40V; 120A; 140W; D2PAK Type of transistor: N-MOSFET Technology: HEXFET® Polarisation: unipolar Drain-source voltage: 40V Drain current: 120A Power dissipation: 140W Case: D2PAK Gate-source voltage: ±20V On-state resistance: 5.5mΩ Mounting: SMD Gate charge: 68nC Kind of channel: enhanced |
auf Bestellung 103 Stücke: Lieferzeit 14-21 Tag (e) |
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IRLHS6276TRPBF | INFINEON TECHNOLOGIES |
Category: Multi channel transistors Description: Transistor: N-MOSFET x2; unipolar; 20V; 12A; 4.5W; PQFN2X2 Kind of package: reel Drain-source voltage: 20V Drain current: 12A Type of transistor: N-MOSFET x2 Power dissipation: 4.5W Polarisation: unipolar Features of semiconductor devices: logic level Technology: HEXFET® Kind of channel: enhanced Mounting: SMD Case: PQFN2X2 |
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IRL1004PBF | INFINEON TECHNOLOGIES |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 40V; 130A; 200W; TO220AB Kind of package: tube Polarisation: unipolar Features of semiconductor devices: logic level Technology: HEXFET® Kind of channel: enhanced Mounting: THT Case: TO220AB Drain-source voltage: 40V Drain current: 130A Type of transistor: N-MOSFET Power dissipation: 200W |
auf Bestellung 84 Stücke: Lieferzeit 14-21 Tag (e) |
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IRL60HS118 | INFINEON TECHNOLOGIES |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 60V; 13A; 5.8W; PQFN2X2 Type of transistor: N-MOSFET Technology: OptiMOS™ 5 Polarisation: unipolar Drain-source voltage: 60V Drain current: 13A Power dissipation: 5.8W Case: PQFN2X2 Gate-source voltage: ±20V On-state resistance: 17mΩ Mounting: SMD Gate charge: 5.3nC Kind of package: reel Kind of channel: enhanced |
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IPA80R1K0CEXKSA2 | INFINEON TECHNOLOGIES |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 800V; 3.6A; Idm: 18A; 32W; TO220FP Type of transistor: N-MOSFET Technology: CoolMOS™ CE Polarisation: unipolar Drain-source voltage: 800V Drain current: 3.6A Pulsed drain current: 18A Power dissipation: 32W Case: TO220FP Gate-source voltage: ±20V On-state resistance: 0.95Ω Mounting: THT Gate charge: 31nC Kind of package: tube Kind of channel: enhanced |
auf Bestellung 61 Stücke: Lieferzeit 14-21 Tag (e) |
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IPA80R1K4P7XKSA1 | INFINEON TECHNOLOGIES |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 800V; 2.7A; Idm: 8.9A; 24W; TO220FP Type of transistor: N-MOSFET Technology: CoolMOS™ P7 Polarisation: unipolar Drain-source voltage: 800V Drain current: 2.7A Pulsed drain current: 8.9A Power dissipation: 24W Case: TO220FP Gate-source voltage: ±20V On-state resistance: 1.4Ω Mounting: THT Kind of package: tube Kind of channel: enhanced Features of semiconductor devices: ESD protected gate |
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IMW120R140M1HXKSA1 | INFINEON TECHNOLOGIES |
Category: THT N channel transistors Description: Transistor: N-MOSFET; SiC; unipolar; 1.2kV; 13A; Idm: 32A; 47W; TO247 Kind of package: tube Mounting: THT Drain current: 13A On-state resistance: 265mΩ Type of transistor: N-MOSFET Power dissipation: 47W Polarisation: unipolar Technology: CoolSiC™; SiC Kind of channel: enhanced Gate-source voltage: -7...23V Pulsed drain current: 32A Case: TO247 Drain-source voltage: 1.2kV |
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| IMW120R350M1HXKSA1 | INFINEON TECHNOLOGIES |
Category: THT N channel transistors Description: Transistor: N-MOSFET; SiC; unipolar; 1.2kV; 4.7A; Idm: 13A; 30W Mounting: THT Kind of package: tube Type of transistor: N-MOSFET On-state resistance: 662mΩ Drain current: 4.7A Drain-source voltage: 1.2kV Power dissipation: 30W Technology: CoolSiC™; SiC Case: TO247 Kind of channel: enhanced Gate-source voltage: -7...23V Pulsed drain current: 13A Polarisation: unipolar |
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| IMZ120R140M1HXKSA1 | INFINEON TECHNOLOGIES |
Category: THT N channel transistors Description: Transistor: N-MOSFET; SiC; unipolar; 1.2kV; 13A; Idm: 32A; 47W Mounting: THT Kind of package: tube On-state resistance: 265mΩ Type of transistor: N-MOSFET Power dissipation: 47W Polarisation: unipolar Case: TO247-4 Features of semiconductor devices: Kelvin terminal Technology: CoolSiC™; SiC Kind of channel: enhanced Gate-source voltage: -7...23V Pulsed drain current: 32A Drain-source voltage: 1.2kV Drain current: 13A |
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| IMZ120R350M1HXKSA1 | INFINEON TECHNOLOGIES |
Category: THT N channel transistors Description: Transistor: N-MOSFET; SiC; unipolar; 1.2kV; 4.7A; Idm: 13A; 30W Kind of package: tube Mounting: THT Drain current: 4.7A Kind of channel: enhanced Drain-source voltage: 1.2kV Type of transistor: N-MOSFET Case: TO247-4 On-state resistance: 662mΩ Gate-source voltage: -7...23V Pulsed drain current: 13A Power dissipation: 30W Polarisation: unipolar Technology: CoolSiC™; SiC Features of semiconductor devices: Kelvin terminal |
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1ED020I12F2XUMA1 | INFINEON TECHNOLOGIES |
Category: MOSFET/IGBT drivers Description: IC: driver; single transistor; high-side,IGBT gate driver; -2÷2A Type of integrated circuit: driver Topology: single transistor Kind of integrated circuit: high-side; IGBT gate driver Technology: EiceDRIVER™ Case: PG-DSO-16-15 Output current: -2...2A Number of channels: 1 Supply voltage: 0...28V; 4.5...5.5V Integrated circuit features: active Miller clamp; galvanically isolated Mounting: SMD Kind of package: reel; tape Voltage class: 0.6/1.2kV Protection: undervoltage UVP |
auf Bestellung 496 Stücke: Lieferzeit 14-21 Tag (e) |
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| 1ED020I12B2XUMA1 | INFINEON TECHNOLOGIES |
Category: MOSFET/IGBT drivers Description: IC: driver; single transistor; high-side,gate driver; -2÷2A; Ch: 1 Type of integrated circuit: driver Topology: single transistor Kind of integrated circuit: gate driver; high-side Technology: EiceDRIVER™ Case: PG-DSO-16-15 Output current: -2...2A Number of channels: 1 Supply voltage: 0...28V; 4.5...5.5V Integrated circuit features: active Miller clamp; galvanically isolated Mounting: SMD Kind of package: reel; tape Voltage class: 0.6/1.2kV Protection: undervoltage UVP |
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| 1ED020I12FA2XUMA2 | INFINEON TECHNOLOGIES |
Category: MOSFET/IGBT drivers Description: IC: driver; single transistor; high-side,IGBT gate driver; -2÷2A Type of integrated circuit: driver Topology: single transistor Kind of integrated circuit: high-side; IGBT gate driver Technology: EiceDRIVER™ Case: PG-DSO-20 Output current: -2...2A Number of channels: 1 Supply voltage: 0...28V; 4.5...5.5V Integrated circuit features: active Miller clamp; galvanically isolated Mounting: SMD Kind of package: reel; tape Voltage class: 0.6/1.2kV Protection: undervoltage UVP |
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| 1ED020I12FXUMA2 | INFINEON TECHNOLOGIES |
Category: MOSFET/IGBT drivers Description: IC: driver; single transistor; high-side,gate driver; -2÷2A; Ch: 1 Type of integrated circuit: driver Topology: single transistor Kind of integrated circuit: gate driver; high-side Technology: EiceDRIVER™ Case: PG-DSO-16-15 Output current: -2...2A Number of channels: 1 Supply voltage: 0...28V; 4.5...5.5V Integrated circuit features: active Miller clamp; galvanically isolated Mounting: SMD Kind of package: reel; tape Voltage class: 0.6/1.2kV Protection: undervoltage UVP |
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2EDL05I06BFXUMA1 | INFINEON TECHNOLOGIES |
Category: MOSFET/IGBT drivers Description: IC: driver; IGBT half-bridge; high-/low-side,IGBT gate driver Integrated circuit features: integrated bootstrap functionality Kind of package: reel; tape Mounting: SMD Technology: EiceDRIVER™ Kind of integrated circuit: high-/low-side; IGBT gate driver Topology: IGBT half-bridge Case: PG-DSO-8 Voltage class: 600V Supply voltage: 10...20V Output current: -0.7...0.36A Type of integrated circuit: driver Number of channels: 2 |
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| 2EDL05I06PJXUMA1 | INFINEON TECHNOLOGIES |
Category: MOSFET/IGBT drivers Description: IC: driver; IGBT half-bridge; high-/low-side,IGBT gate driver Type of integrated circuit: driver Topology: IGBT half-bridge Kind of integrated circuit: high-/low-side; IGBT gate driver Technology: EiceDRIVER™ Case: PG-DSO-14 Output current: -0.7...0.36A Number of channels: 2 Supply voltage: 10...20V Integrated circuit features: integrated bootstrap functionality Mounting: SMD Kind of package: reel; tape Voltage class: 600V |
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IAUT200N08S5N023ATMA1 | INFINEON TECHNOLOGIES |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 80V; 200A; 200W; PG-HSOF-8 Kind of channel: enhanced Drain-source voltage: 80V Type of transistor: N-MOSFET Kind of package: reel; tape Case: PG-HSOF-8 On-state resistance: 2.3mΩ Gate-source voltage: ±20V Mounting: SMD Power dissipation: 200W Gate charge: 36nC Polarisation: unipolar Technology: OptiMOS™ 5 Drain current: 200A |
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BFP640H6327XTSA1 | INFINEON TECHNOLOGIES |
Category: NPN SMD transistors Description: Transistor: NPN; SiGe: C; bipolar; RF; 4.1V; 50mA; 0.2W; SOT343 Type of transistor: NPN Technology: SiGe:C Polarisation: bipolar Kind of transistor: RF Collector-emitter voltage: 4.1V Collector current: 50mA Power dissipation: 0.2W Case: SOT343 Current gain: 110...270 Mounting: SMD Kind of package: reel; tape Frequency: 42GHz |
auf Bestellung 3000 Stücke: Lieferzeit 14-21 Tag (e) |
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BFP760H6327XTSA1 | INFINEON TECHNOLOGIES |
Category: NPN SMD transistors Description: Transistor: NPN; SiGe: C; bipolar; HBT,RF; 13V; 70mA; 0.24W; SOT343 Type of transistor: NPN Technology: SiGe:C Polarisation: bipolar Kind of transistor: HBT; RF Collector-emitter voltage: 13V Collector current: 70mA Power dissipation: 0.24W Case: SOT343 Current gain: 160...400 Mounting: SMD Kind of package: reel; tape Frequency: 45GHz |
auf Bestellung 2410 Stücke: Lieferzeit 14-21 Tag (e) |
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| BCR402UE6433HTMA1 | INFINEON TECHNOLOGIES |
Category: LED drivers Description: IC: driver; single transistor; current regulator,LED driver Type of integrated circuit: driver Topology: single transistor Kind of integrated circuit: current regulator; LED driver Case: SC74 Output current: 20...65mA Number of channels: 1 Integrated circuit features: linear dimming Mounting: SMD Operating voltage: 1.4...40V |
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| BCR420UE6433HTMA1 | INFINEON TECHNOLOGIES |
Category: LED drivers Description: IC: driver; single transistor; current regulator,LED driver Type of integrated circuit: driver Topology: single transistor Kind of integrated circuit: current regulator; LED driver Case: SC74 Output current: 150...200mA Number of channels: 1 Integrated circuit features: linear dimming Mounting: SMD Operating voltage: 1.4...40V |
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IPP034N03LGXKSA1 | INFINEON TECHNOLOGIES |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 30V; 80A; 94W; PG-TO220-3 Type of transistor: N-MOSFET Technology: OptiMOS™ 3 Polarisation: unipolar Drain-source voltage: 30V Drain current: 80A Power dissipation: 94W Case: PG-TO220-3 Gate-source voltage: ±20V On-state resistance: 3.4mΩ Mounting: THT Kind of package: tube Kind of channel: enhanced |
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| IAUA170N10S5N031AUMA1 | INFINEON TECHNOLOGIES |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 100V; 22A; Idm: 519A; 197W Type of transistor: N-MOSFET Technology: OptiMOS™ 5 Polarisation: unipolar Drain-source voltage: 100V Drain current: 22A Pulsed drain current: 519A Power dissipation: 197W Case: PG-HSOF-5 Gate-source voltage: ±20V On-state resistance: 4mΩ Mounting: SMD Gate charge: 88nC Kind of package: reel; tape Kind of channel: enhanced |
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| FD300R06KE3HOSA1 | INFINEON TECHNOLOGIES |
Category: IGBT modules Description: Module: IGBT; diode/transistor; boost chopper; Urmax: 600V; screw Application: frequency changer; Inverter Topology: boost chopper Mechanical mounting: screw Pulsed collector current: 600A Max. off-state voltage: 0.6kV Electrical mounting: screw Type of module: IGBT Semiconductor structure: diode/transistor Case: AG-62MM-1 Gate-emitter voltage: ±20V Collector current: 300A |
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FD300R12KE3HOSA1 | INFINEON TECHNOLOGIES |
Category: IGBT modules Description: Module: IGBT; diode/transistor; boost chopper; Urmax: 1.2kV; screw Type of module: IGBT Semiconductor structure: diode/transistor Max. off-state voltage: 1.2kV Case: AG-62MM-1 Electrical mounting: screw Mechanical mounting: screw Topology: boost chopper Gate-emitter voltage: ±20V Collector current: 300A Pulsed collector current: 600A Application: frequency changer; Inverter Power dissipation: 1.47kW |
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FF300R06KE3 | INFINEON TECHNOLOGIES |
Category: IGBT modules Description: Module: IGBT; transistor/transistor; IGBT half-bridge; Ic: 300A Topology: IGBT half-bridge Power dissipation: 940W Mechanical mounting: screw Pulsed collector current: 600A Max. off-state voltage: 0.6kV Electrical mounting: screw Type of module: IGBT Semiconductor structure: transistor/transistor Case: AG-62MM-1 Gate-emitter voltage: ±20V Collector current: 300A |
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FF300R12KE3 | INFINEON TECHNOLOGIES |
Category: IGBT modules Description: Module: IGBT; transistor/transistor; IGBT half-bridge; Ic: 300A Case: AG-62MM-1 Pulsed collector current: 600A Max. off-state voltage: 1.2kV Electrical mounting: screw Type of module: IGBT Semiconductor structure: transistor/transistor Gate-emitter voltage: ±20V Collector current: 300A Topology: IGBT half-bridge Power dissipation: 1.45kW Mechanical mounting: screw |
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FF300R12KT3EHOSA1 | INFINEON TECHNOLOGIES |
Category: IGBT modules Description: Module: IGBT; transistor/transistor,common emitter; IGBT x2 Type of module: IGBT Semiconductor structure: common emitter; transistor/transistor Max. off-state voltage: 1.2kV Case: AG-62MM-1 Electrical mounting: FASTON connectors; screw Mechanical mounting: screw Topology: IGBT x2 Gate-emitter voltage: ±20V Collector current: 300A Pulsed collector current: 600A Power dissipation: 1.45kW |
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FF300R12KT4HOSA1 | INFINEON TECHNOLOGIES |
Category: IGBT modules Description: Module: IGBT; transistor/transistor; IGBT half-bridge; Ic: 300A Type of module: IGBT Semiconductor structure: transistor/transistor Max. off-state voltage: 1.2kV Case: AG-62MM-1 Electrical mounting: screw Mechanical mounting: screw Topology: IGBT half-bridge Gate-emitter voltage: ±20V Collector current: 300A Pulsed collector current: 600A Power dissipation: 1.6kW |
Produkt ist nicht verfügbar |
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| FF300R17ME4BOSA1 | INFINEON TECHNOLOGIES |
Category: IGBT modules Description: Module: IGBT; transistor/transistor; IGBT half-bridge; Ic: 300A Case: AG-ECONOD-3 Power dissipation: 1.8kW Technology: EconoDUAL™ 3 Mechanical mounting: screw Pulsed collector current: 600A Max. off-state voltage: 1.7kV Electrical mounting: Press-in PCB Type of module: IGBT Semiconductor structure: transistor/transistor Gate-emitter voltage: ±20V Collector current: 300A Topology: IGBT half-bridge; NTC thermistor |
Produkt ist nicht verfügbar |
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F3L300R07PE4 | INFINEON TECHNOLOGIES |
Category: IGBT modules Description: Module: IGBT; diode/transistor; Urmax: 650V; Ic: 300A; AG-ECONO4-1 Type of module: IGBT Semiconductor structure: diode/transistor Topology: NTC thermistor; three-level inverter; single-phase Max. off-state voltage: 650V Collector current: 300A Case: AG-ECONO4-1 Electrical mounting: Press-Fit; screw Gate-emitter voltage: ±20V Pulsed collector current: 600A Power dissipation: 940W Technology: EconoPACK™ 4 Mechanical mounting: screw |
Produkt ist nicht verfügbar |
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BSO211PHXUMA1 | INFINEON TECHNOLOGIES |
Category: SMD P channel transistors Description: Transistor: P-MOSFET; unipolar; -20V; -4.6A; 1.6W; PG-DSO-8 Type of transistor: P-MOSFET Technology: OptiMOS™ P Polarisation: unipolar Drain-source voltage: -20V Drain current: -4.6A Power dissipation: 1.6W Case: PG-DSO-8 Gate-source voltage: ±12V On-state resistance: 67mΩ Mounting: SMD Kind of channel: enhanced |
auf Bestellung 2453 Stücke: Lieferzeit 14-21 Tag (e) |
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IRFR2405TRLPBF | INFINEON TECHNOLOGIES |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 55V; 56A; 110W; DPAK Type of transistor: N-MOSFET Technology: HEXFET® Polarisation: unipolar Drain-source voltage: 55V Drain current: 56A Power dissipation: 110W Case: DPAK Mounting: SMD Kind of package: reel Kind of channel: enhanced |
Produkt ist nicht verfügbar |
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IRFR2405TRPBF | INFINEON TECHNOLOGIES |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 55V; 56A; 110W; DPAK Type of transistor: N-MOSFET Technology: HEXFET® Polarisation: unipolar Drain-source voltage: 55V Drain current: 56A Power dissipation: 110W Case: DPAK Mounting: SMD Kind of package: reel Kind of channel: enhanced |
Produkt ist nicht verfügbar |
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IRFR2407TRPBF | INFINEON TECHNOLOGIES |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 75V; 42A; 110W; DPAK Power dissipation: 110W Polarisation: unipolar Technology: HEXFET® Drain current: 42A Kind of channel: enhanced Drain-source voltage: 75V Type of transistor: N-MOSFET Kind of package: reel Case: DPAK Mounting: SMD |
Produkt ist nicht verfügbar |
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IRFR2607ZTRPBF | INFINEON TECHNOLOGIES |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 75V; 45A; 110W; DPAK Mounting: SMD Drain-source voltage: 75V Drain current: 45A Type of transistor: N-MOSFET Power dissipation: 110W Polarisation: unipolar Kind of package: reel Technology: HEXFET® Kind of channel: enhanced Case: DPAK |
Produkt ist nicht verfügbar |
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IRF6645TRPBF | INFINEON TECHNOLOGIES |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 100V; 5.7A; 42W; DirectFET Type of transistor: N-MOSFET Technology: HEXFET® Polarisation: unipolar Drain-source voltage: 100V Drain current: 5.7A Power dissipation: 42W Case: DirectFET Mounting: SMD Kind of package: reel Kind of channel: enhanced |
Produkt ist nicht verfügbar |
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IRF6646TRPBF | INFINEON TECHNOLOGIES |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 80V; 12A; 89W; DirectFET Case: DirectFET Mounting: SMD Kind of package: reel Power dissipation: 89W Polarisation: unipolar Technology: HEXFET® Kind of channel: enhanced Drain-source voltage: 80V Drain current: 12A Type of transistor: N-MOSFET |
Produkt ist nicht verfügbar |
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IRF6655TRPBF | INFINEON TECHNOLOGIES |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 100V; 4.2A; 42W; DirectFET Mounting: SMD Power dissipation: 42W Polarisation: unipolar Technology: HEXFET® Drain current: 4.2A Kind of channel: enhanced Drain-source voltage: 100V Type of transistor: N-MOSFET Kind of package: reel Case: DirectFET |
Produkt ist nicht verfügbar |
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IRF7606TRPBF | INFINEON TECHNOLOGIES |
Category: SMD P channel transistors Description: Transistor: P-MOSFET; unipolar; -30V; -3.6A; 1.8W; Micro8 Type of transistor: P-MOSFET Technology: HEXFET® Polarisation: unipolar Drain-source voltage: -30V Drain current: -3.6A Power dissipation: 1.8W Case: Micro8 Mounting: SMD Kind of package: reel Kind of channel: enhanced |
Produkt ist nicht verfügbar |
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IRF6712STRPBF | INFINEON TECHNOLOGIES |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 25V; 17A; 36W; DirectFET Mounting: SMD Kind of package: reel Type of transistor: N-MOSFET Power dissipation: 36W Polarisation: unipolar Technology: HEXFET® Kind of channel: enhanced Case: DirectFET Drain-source voltage: 25V Drain current: 17A |
Produkt ist nicht verfügbar |
| 1EDI2010ASXUMA1 |
|
Hersteller: INFINEON TECHNOLOGIES
Category: MOSFET/IGBT drivers
Description: IC: driver; single transistor; high-side,IGBT gate driver; SPI
Technology: EiceDRIVER™
Case: PG-DSO-36
Mounting: SMD
Kind of package: reel; tape
Output current: -1...1A
Topology: single transistor
Voltage class: 1.2kV
Supply voltage: 4.65...5.5V; 13...18V
Type of integrated circuit: driver
Interface: SPI
Number of channels: 1
Integrated circuit features: galvanically isolated
Kind of integrated circuit: high-side; IGBT gate driver
Category: MOSFET/IGBT drivers
Description: IC: driver; single transistor; high-side,IGBT gate driver; SPI
Technology: EiceDRIVER™
Case: PG-DSO-36
Mounting: SMD
Kind of package: reel; tape
Output current: -1...1A
Topology: single transistor
Voltage class: 1.2kV
Supply voltage: 4.65...5.5V; 13...18V
Type of integrated circuit: driver
Interface: SPI
Number of channels: 1
Integrated circuit features: galvanically isolated
Kind of integrated circuit: high-side; IGBT gate driver
Produkt ist nicht verfügbar
| 1EDI20I12AFXUMA1 |
|
Hersteller: INFINEON TECHNOLOGIES
Category: MOSFET/IGBT drivers
Description: IC: driver; single transistor; high-side,IGBT gate driver; -2÷2A
Technology: EiceDRIVER™
Case: PG-DSO-8
Mounting: SMD
Kind of package: reel; tape
Output current: -2...2A
Topology: single transistor
Voltage class: 1.2kV
Supply voltage: 3.1...17V; 13...35V
Type of integrated circuit: driver
Number of channels: 1
Integrated circuit features: galvanically isolated
Kind of integrated circuit: high-side; IGBT gate driver
Category: MOSFET/IGBT drivers
Description: IC: driver; single transistor; high-side,IGBT gate driver; -2÷2A
Technology: EiceDRIVER™
Case: PG-DSO-8
Mounting: SMD
Kind of package: reel; tape
Output current: -2...2A
Topology: single transistor
Voltage class: 1.2kV
Supply voltage: 3.1...17V; 13...35V
Type of integrated circuit: driver
Number of channels: 1
Integrated circuit features: galvanically isolated
Kind of integrated circuit: high-side; IGBT gate driver
Produkt ist nicht verfügbar
| 1EDI20I12MFXUMA1 |
|
Hersteller: INFINEON TECHNOLOGIES
Category: MOSFET/IGBT drivers
Description: IC: driver; single transistor; high-side,IGBT gate driver; -2÷2A
Technology: EiceDRIVER™
Case: PG-DSO-8
Mounting: SMD
Kind of package: reel; tape
Output current: -2...2A
Topology: single transistor
Voltage class: 1.2kV
Supply voltage: 3.1...17V; 13...35V
Type of integrated circuit: driver
Number of channels: 1
Integrated circuit features: active Miller clamp; galvanically isolated
Kind of integrated circuit: high-side; IGBT gate driver
Category: MOSFET/IGBT drivers
Description: IC: driver; single transistor; high-side,IGBT gate driver; -2÷2A
Technology: EiceDRIVER™
Case: PG-DSO-8
Mounting: SMD
Kind of package: reel; tape
Output current: -2...2A
Topology: single transistor
Voltage class: 1.2kV
Supply voltage: 3.1...17V; 13...35V
Type of integrated circuit: driver
Number of channels: 1
Integrated circuit features: active Miller clamp; galvanically isolated
Kind of integrated circuit: high-side; IGBT gate driver
Produkt ist nicht verfügbar
| 1EDI20N12AFXUMA1 |
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Hersteller: INFINEON TECHNOLOGIES
Category: MOSFET/IGBT drivers
Description: IC: driver; single transistor; high-side,gate driver; PG-DSO-8
Technology: EiceDRIVER™; GaN
Case: PG-DSO-8
Mounting: SMD
Kind of package: reel; tape
Output current: -2...2A
Topology: single transistor
Kind of integrated circuit: gate driver; high-side
Voltage class: 1.2kV
Supply voltage: 3.1...17V; 13...35V
Type of integrated circuit: driver
Number of channels: 1
Integrated circuit features: galvanically isolated
Category: MOSFET/IGBT drivers
Description: IC: driver; single transistor; high-side,gate driver; PG-DSO-8
Technology: EiceDRIVER™; GaN
Case: PG-DSO-8
Mounting: SMD
Kind of package: reel; tape
Output current: -2...2A
Topology: single transistor
Kind of integrated circuit: gate driver; high-side
Voltage class: 1.2kV
Supply voltage: 3.1...17V; 13...35V
Type of integrated circuit: driver
Number of channels: 1
Integrated circuit features: galvanically isolated
Produkt ist nicht verfügbar
| IRFR4510TRPBF |
|
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 45A; Idm: 252A; 143W; DPAK
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 45A
Pulsed drain current: 252A
Power dissipation: 143W
Case: DPAK
Gate-source voltage: ±20V
On-state resistance: 13.9mΩ
Mounting: SMD
Kind of channel: enhanced
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 45A; Idm: 252A; 143W; DPAK
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 45A
Pulsed drain current: 252A
Power dissipation: 143W
Case: DPAK
Gate-source voltage: ±20V
On-state resistance: 13.9mΩ
Mounting: SMD
Kind of channel: enhanced
Produkt ist nicht verfügbar
| BAT6405WH6327XTSA1 |
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Hersteller: INFINEON TECHNOLOGIES
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SMD; 40V; 0.25A; SOT323; 250mW
Type of diode: Schottky rectifying
Mounting: SMD
Max. off-state voltage: 40V
Load current: 0.25A
Semiconductor structure: common cathode; double
Case: SOT323
Max. forward impulse current: 0.8A
Power dissipation: 0.25W
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SMD; 40V; 0.25A; SOT323; 250mW
Type of diode: Schottky rectifying
Mounting: SMD
Max. off-state voltage: 40V
Load current: 0.25A
Semiconductor structure: common cathode; double
Case: SOT323
Max. forward impulse current: 0.8A
Power dissipation: 0.25W
auf Bestellung 2500 Stücke:
Lieferzeit 14-21 Tag (e)| Anzahl | Preis ohne MwSt |
|---|---|
| 556+ | 0.13 EUR |
| 618+ | 0.12 EUR |
| 807+ | 0.089 EUR |
| 848+ | 0.084 EUR |
| IRLS3036TRL7PP |
|
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 210A; Idm: 1kA; 380W; D2PAK-7
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 210A
Pulsed drain current: 1kA
Power dissipation: 380W
Case: D2PAK-7
Gate-source voltage: ±16V
On-state resistance: 1.9mΩ
Mounting: SMD
Kind of channel: enhanced
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 210A; Idm: 1kA; 380W; D2PAK-7
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 210A
Pulsed drain current: 1kA
Power dissipation: 380W
Case: D2PAK-7
Gate-source voltage: ±16V
On-state resistance: 1.9mΩ
Mounting: SMD
Kind of channel: enhanced
auf Bestellung 745 Stücke:
Lieferzeit 14-21 Tag (e)| Anzahl | Preis ohne MwSt |
|---|---|
| 17+ | 4.33 EUR |
| 19+ | 3.9 EUR |
| 24+ | 3.06 EUR |
| 25+ | 2.9 EUR |
| IRLS3036TRLPBF |
|
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 270A; 380W; D2PAK
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 270A
Power dissipation: 380W
Case: D2PAK
Mounting: SMD
Kind of package: reel
Kind of channel: enhanced
Features of semiconductor devices: logic level
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 270A; 380W; D2PAK
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 270A
Power dissipation: 380W
Case: D2PAK
Mounting: SMD
Kind of package: reel
Kind of channel: enhanced
Features of semiconductor devices: logic level
Produkt ist nicht verfügbar
| ILD8150EXUMA1 |
|
Hersteller: INFINEON TECHNOLOGIES
Category: LED drivers
Description: IC: driver; buck; LED controller; PG-DSO-8; 1.5A; Ch: 1; 8÷80V
Type of integrated circuit: driver
Topology: buck
Kind of integrated circuit: LED controller
Case: PG-DSO-8
Output current: 1.5A
Number of channels: 1
Integrated circuit features: linear dimming; PWM
Mounting: SMD
Operating voltage: 8...80V
Category: LED drivers
Description: IC: driver; buck; LED controller; PG-DSO-8; 1.5A; Ch: 1; 8÷80V
Type of integrated circuit: driver
Topology: buck
Kind of integrated circuit: LED controller
Case: PG-DSO-8
Output current: 1.5A
Number of channels: 1
Integrated circuit features: linear dimming; PWM
Mounting: SMD
Operating voltage: 8...80V
Produkt ist nicht verfügbar
| BSC0501NSIATMA1 |
|
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 100A; 50W; PG-TDSON-8
Technology: OptiMOS™ 5
Case: PG-TDSON-8
Mounting: SMD
On-state resistance: 1.9mΩ
Power dissipation: 50W
Drain current: 100A
Kind of channel: enhanced
Drain-source voltage: 30V
Type of transistor: N-MOSFET
Gate-source voltage: ±20V
Polarisation: unipolar
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 100A; 50W; PG-TDSON-8
Technology: OptiMOS™ 5
Case: PG-TDSON-8
Mounting: SMD
On-state resistance: 1.9mΩ
Power dissipation: 50W
Drain current: 100A
Kind of channel: enhanced
Drain-source voltage: 30V
Type of transistor: N-MOSFET
Gate-source voltage: ±20V
Polarisation: unipolar
Produkt ist nicht verfügbar
| BSC0503NSIATMA1 |
|
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 100A; 50W; PG-TDSON-8
Technology: OptiMOS™ 5
Case: PG-TDSON-8
Mounting: SMD
On-state resistance: 1.9mΩ
Power dissipation: 50W
Drain current: 100A
Kind of channel: enhanced
Drain-source voltage: 30V
Type of transistor: N-MOSFET
Gate-source voltage: ±20V
Polarisation: unipolar
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 100A; 50W; PG-TDSON-8
Technology: OptiMOS™ 5
Case: PG-TDSON-8
Mounting: SMD
On-state resistance: 1.9mΩ
Power dissipation: 50W
Drain current: 100A
Kind of channel: enhanced
Drain-source voltage: 30V
Type of transistor: N-MOSFET
Gate-source voltage: ±20V
Polarisation: unipolar
Produkt ist nicht verfügbar
| BSC0902NSIATMA1 |
|
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 89A; 48W; PG-TDSON-8
Type of transistor: N-MOSFET
Technology: OptiMOS™
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 89A
Power dissipation: 48W
Case: PG-TDSON-8
Gate-source voltage: ±20V
On-state resistance: 2.8mΩ
Mounting: SMD
Kind of channel: enhanced
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 89A; 48W; PG-TDSON-8
Type of transistor: N-MOSFET
Technology: OptiMOS™
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 89A
Power dissipation: 48W
Case: PG-TDSON-8
Gate-source voltage: ±20V
On-state resistance: 2.8mΩ
Mounting: SMD
Kind of channel: enhanced
auf Bestellung 4625 Stücke:
Lieferzeit 14-21 Tag (e)| Anzahl | Preis ohne MwSt |
|---|---|
| 52+ | 1.39 EUR |
| 95+ | 0.76 EUR |
| 100+ | 0.72 EUR |
| 1000+ | 0.71 EUR |
| BSC0904NSIATMA1 |
|
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 66A; 37W; PG-TDSON-8
Type of transistor: N-MOSFET
Technology: OptiMOS™
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 66A
Power dissipation: 37W
Case: PG-TDSON-8
Gate-source voltage: ±20V
On-state resistance: 3.7mΩ
Mounting: SMD
Kind of channel: enhanced
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 66A; 37W; PG-TDSON-8
Type of transistor: N-MOSFET
Technology: OptiMOS™
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 66A
Power dissipation: 37W
Case: PG-TDSON-8
Gate-source voltage: ±20V
On-state resistance: 3.7mΩ
Mounting: SMD
Kind of channel: enhanced
Produkt ist nicht verfügbar
| BSZ0902NSIATMA1 |
|
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 40A; 48W; PG-TSDSON-8
Type of transistor: N-MOSFET
Technology: OptiMOS™
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 40A
Power dissipation: 48W
Case: PG-TSDSON-8
Gate-source voltage: ±20V
On-state resistance: 2.8mΩ
Mounting: SMD
Kind of channel: enhanced
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 40A; 48W; PG-TSDSON-8
Type of transistor: N-MOSFET
Technology: OptiMOS™
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 40A
Power dissipation: 48W
Case: PG-TSDSON-8
Gate-source voltage: ±20V
On-state resistance: 2.8mΩ
Mounting: SMD
Kind of channel: enhanced
Produkt ist nicht verfügbar
| IPD60R650CEAUMA1 |
|
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 6.2A; Idm: 19A; 82W
Type of transistor: N-MOSFET
Technology: CoolMOS™ CE
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 6.2A
Pulsed drain current: 19A
Power dissipation: 82W
Case: PG-TO252-3
Gate-source voltage: ±20V
On-state resistance: 0.65Ω
Mounting: SMD
Gate charge: 20.5nC
Kind of channel: enhanced
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 6.2A; Idm: 19A; 82W
Type of transistor: N-MOSFET
Technology: CoolMOS™ CE
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 6.2A
Pulsed drain current: 19A
Power dissipation: 82W
Case: PG-TO252-3
Gate-source voltage: ±20V
On-state resistance: 0.65Ω
Mounting: SMD
Gate charge: 20.5nC
Kind of channel: enhanced
auf Bestellung 2221 Stücke:
Lieferzeit 14-21 Tag (e)| Anzahl | Preis ohne MwSt |
|---|---|
| 68+ | 1.06 EUR |
| 76+ | 0.95 EUR |
| 91+ | 0.79 EUR |
| 97+ | 0.74 EUR |
| 500+ | 0.72 EUR |
| IRG4PSH71KDPBF |
|
Hersteller: INFINEON TECHNOLOGIES
Category: THT IGBT transistors
Description: Transistor: IGBT; 1.2kV; 78A; 350W; SUPER247
Type of transistor: IGBT
Collector-emitter voltage: 1.2kV
Collector current: 78A
Power dissipation: 350W
Case: SUPER247
Mounting: THT
Kind of package: tube
Features of semiconductor devices: integrated anti-parallel diode
Category: THT IGBT transistors
Description: Transistor: IGBT; 1.2kV; 78A; 350W; SUPER247
Type of transistor: IGBT
Collector-emitter voltage: 1.2kV
Collector current: 78A
Power dissipation: 350W
Case: SUPER247
Mounting: THT
Kind of package: tube
Features of semiconductor devices: integrated anti-parallel diode
Produkt ist nicht verfügbar
| IRF7831TRPBF | |
|
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 21A; 2.5W; SO8
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 21A
Power dissipation: 2.5W
Case: SO8
Mounting: SMD
Kind of package: reel
Kind of channel: enhanced
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 21A; 2.5W; SO8
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 21A
Power dissipation: 2.5W
Case: SO8
Mounting: SMD
Kind of package: reel
Kind of channel: enhanced
Produkt ist nicht verfügbar
| IFX21401MBHTSA1 |
|
Hersteller: INFINEON TECHNOLOGIES
Category: LDO regulated voltage regulators
Description: IC: voltage regulator; LDO,adjustable; 0.05A; PG-SCT595; SMD
Type of integrated circuit: voltage regulator
Kind of voltage regulator: adjustable; LDO
Voltage drop: 0.3V
Output current: 50mA
Case: PG-SCT595
Mounting: SMD
Kind of package: reel; tape
Operating temperature: -40...125°C
Input voltage: 4...40V
Category: LDO regulated voltage regulators
Description: IC: voltage regulator; LDO,adjustable; 0.05A; PG-SCT595; SMD
Type of integrated circuit: voltage regulator
Kind of voltage regulator: adjustable; LDO
Voltage drop: 0.3V
Output current: 50mA
Case: PG-SCT595
Mounting: SMD
Kind of package: reel; tape
Operating temperature: -40...125°C
Input voltage: 4...40V
Produkt ist nicht verfügbar
| IRF4104PBF | |
|
Hersteller: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 120A; 140W; TO220AB
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 120A
Power dissipation: 140W
Case: TO220AB
Gate-source voltage: ±20V
On-state resistance: 5.5mΩ
Mounting: THT
Gate charge: 68nC
Kind of package: tube
Kind of channel: enhanced
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 120A; 140W; TO220AB
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 120A
Power dissipation: 140W
Case: TO220AB
Gate-source voltage: ±20V
On-state resistance: 5.5mΩ
Mounting: THT
Gate charge: 68nC
Kind of package: tube
Kind of channel: enhanced
auf Bestellung 77 Stücke:
Lieferzeit 14-21 Tag (e)| Anzahl | Preis ohne MwSt |
|---|---|
| 34+ | 2.14 EUR |
| 38+ | 1.93 EUR |
| 42+ | 1.72 EUR |
| 49+ | 1.47 EUR |
| 52+ | 1.39 EUR |
| IRF4104SPBF | |
|
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 120A; 140W; D2PAK
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 120A
Power dissipation: 140W
Case: D2PAK
Gate-source voltage: ±20V
On-state resistance: 5.5mΩ
Mounting: SMD
Gate charge: 68nC
Kind of channel: enhanced
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 120A; 140W; D2PAK
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 120A
Power dissipation: 140W
Case: D2PAK
Gate-source voltage: ±20V
On-state resistance: 5.5mΩ
Mounting: SMD
Gate charge: 68nC
Kind of channel: enhanced
auf Bestellung 103 Stücke:
Lieferzeit 14-21 Tag (e)| Anzahl | Preis ohne MwSt |
|---|---|
| 36+ | 2 EUR |
| 40+ | 1.79 EUR |
| 46+ | 1.59 EUR |
| 53+ | 1.37 EUR |
| 55+ | 1.3 EUR |
| IRLHS6276TRPBF |
|
Hersteller: INFINEON TECHNOLOGIES
Category: Multi channel transistors
Description: Transistor: N-MOSFET x2; unipolar; 20V; 12A; 4.5W; PQFN2X2
Kind of package: reel
Drain-source voltage: 20V
Drain current: 12A
Type of transistor: N-MOSFET x2
Power dissipation: 4.5W
Polarisation: unipolar
Features of semiconductor devices: logic level
Technology: HEXFET®
Kind of channel: enhanced
Mounting: SMD
Case: PQFN2X2
Category: Multi channel transistors
Description: Transistor: N-MOSFET x2; unipolar; 20V; 12A; 4.5W; PQFN2X2
Kind of package: reel
Drain-source voltage: 20V
Drain current: 12A
Type of transistor: N-MOSFET x2
Power dissipation: 4.5W
Polarisation: unipolar
Features of semiconductor devices: logic level
Technology: HEXFET®
Kind of channel: enhanced
Mounting: SMD
Case: PQFN2X2
Produkt ist nicht verfügbar
| IRL1004PBF |
|
Hersteller: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 130A; 200W; TO220AB
Kind of package: tube
Polarisation: unipolar
Features of semiconductor devices: logic level
Technology: HEXFET®
Kind of channel: enhanced
Mounting: THT
Case: TO220AB
Drain-source voltage: 40V
Drain current: 130A
Type of transistor: N-MOSFET
Power dissipation: 200W
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 130A; 200W; TO220AB
Kind of package: tube
Polarisation: unipolar
Features of semiconductor devices: logic level
Technology: HEXFET®
Kind of channel: enhanced
Mounting: THT
Case: TO220AB
Drain-source voltage: 40V
Drain current: 130A
Type of transistor: N-MOSFET
Power dissipation: 200W
auf Bestellung 84 Stücke:
Lieferzeit 14-21 Tag (e)| Anzahl | Preis ohne MwSt |
|---|---|
| 27+ | 2.72 EUR |
| 31+ | 2.37 EUR |
| 35+ | 2.06 EUR |
| 37+ | 1.94 EUR |
| IRL60HS118 |
|
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 13A; 5.8W; PQFN2X2
Type of transistor: N-MOSFET
Technology: OptiMOS™ 5
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 13A
Power dissipation: 5.8W
Case: PQFN2X2
Gate-source voltage: ±20V
On-state resistance: 17mΩ
Mounting: SMD
Gate charge: 5.3nC
Kind of package: reel
Kind of channel: enhanced
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 13A; 5.8W; PQFN2X2
Type of transistor: N-MOSFET
Technology: OptiMOS™ 5
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 13A
Power dissipation: 5.8W
Case: PQFN2X2
Gate-source voltage: ±20V
On-state resistance: 17mΩ
Mounting: SMD
Gate charge: 5.3nC
Kind of package: reel
Kind of channel: enhanced
Produkt ist nicht verfügbar
| IPA80R1K0CEXKSA2 |
|
Hersteller: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 800V; 3.6A; Idm: 18A; 32W; TO220FP
Type of transistor: N-MOSFET
Technology: CoolMOS™ CE
Polarisation: unipolar
Drain-source voltage: 800V
Drain current: 3.6A
Pulsed drain current: 18A
Power dissipation: 32W
Case: TO220FP
Gate-source voltage: ±20V
On-state resistance: 0.95Ω
Mounting: THT
Gate charge: 31nC
Kind of package: tube
Kind of channel: enhanced
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 800V; 3.6A; Idm: 18A; 32W; TO220FP
Type of transistor: N-MOSFET
Technology: CoolMOS™ CE
Polarisation: unipolar
Drain-source voltage: 800V
Drain current: 3.6A
Pulsed drain current: 18A
Power dissipation: 32W
Case: TO220FP
Gate-source voltage: ±20V
On-state resistance: 0.95Ω
Mounting: THT
Gate charge: 31nC
Kind of package: tube
Kind of channel: enhanced
auf Bestellung 61 Stücke:
Lieferzeit 14-21 Tag (e)| Anzahl | Preis ohne MwSt |
|---|---|
| 35+ | 2.09 EUR |
| 38+ | 1.89 EUR |
| 43+ | 1.67 EUR |
| 53+ | 1.37 EUR |
| 55+ | 1.3 EUR |
| IPA80R1K4P7XKSA1 |
|
Hersteller: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 800V; 2.7A; Idm: 8.9A; 24W; TO220FP
Type of transistor: N-MOSFET
Technology: CoolMOS™ P7
Polarisation: unipolar
Drain-source voltage: 800V
Drain current: 2.7A
Pulsed drain current: 8.9A
Power dissipation: 24W
Case: TO220FP
Gate-source voltage: ±20V
On-state resistance: 1.4Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhanced
Features of semiconductor devices: ESD protected gate
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 800V; 2.7A; Idm: 8.9A; 24W; TO220FP
Type of transistor: N-MOSFET
Technology: CoolMOS™ P7
Polarisation: unipolar
Drain-source voltage: 800V
Drain current: 2.7A
Pulsed drain current: 8.9A
Power dissipation: 24W
Case: TO220FP
Gate-source voltage: ±20V
On-state resistance: 1.4Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhanced
Features of semiconductor devices: ESD protected gate
Produkt ist nicht verfügbar
| IMW120R140M1HXKSA1 |
|
Hersteller: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; SiC; unipolar; 1.2kV; 13A; Idm: 32A; 47W; TO247
Kind of package: tube
Mounting: THT
Drain current: 13A
On-state resistance: 265mΩ
Type of transistor: N-MOSFET
Power dissipation: 47W
Polarisation: unipolar
Technology: CoolSiC™; SiC
Kind of channel: enhanced
Gate-source voltage: -7...23V
Pulsed drain current: 32A
Case: TO247
Drain-source voltage: 1.2kV
Category: THT N channel transistors
Description: Transistor: N-MOSFET; SiC; unipolar; 1.2kV; 13A; Idm: 32A; 47W; TO247
Kind of package: tube
Mounting: THT
Drain current: 13A
On-state resistance: 265mΩ
Type of transistor: N-MOSFET
Power dissipation: 47W
Polarisation: unipolar
Technology: CoolSiC™; SiC
Kind of channel: enhanced
Gate-source voltage: -7...23V
Pulsed drain current: 32A
Case: TO247
Drain-source voltage: 1.2kV
Produkt ist nicht verfügbar
| IMW120R350M1HXKSA1 |
|
Hersteller: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; SiC; unipolar; 1.2kV; 4.7A; Idm: 13A; 30W
Mounting: THT
Kind of package: tube
Type of transistor: N-MOSFET
On-state resistance: 662mΩ
Drain current: 4.7A
Drain-source voltage: 1.2kV
Power dissipation: 30W
Technology: CoolSiC™; SiC
Case: TO247
Kind of channel: enhanced
Gate-source voltage: -7...23V
Pulsed drain current: 13A
Polarisation: unipolar
Category: THT N channel transistors
Description: Transistor: N-MOSFET; SiC; unipolar; 1.2kV; 4.7A; Idm: 13A; 30W
Mounting: THT
Kind of package: tube
Type of transistor: N-MOSFET
On-state resistance: 662mΩ
Drain current: 4.7A
Drain-source voltage: 1.2kV
Power dissipation: 30W
Technology: CoolSiC™; SiC
Case: TO247
Kind of channel: enhanced
Gate-source voltage: -7...23V
Pulsed drain current: 13A
Polarisation: unipolar
Produkt ist nicht verfügbar
| IMZ120R140M1HXKSA1 |
|
Hersteller: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; SiC; unipolar; 1.2kV; 13A; Idm: 32A; 47W
Mounting: THT
Kind of package: tube
On-state resistance: 265mΩ
Type of transistor: N-MOSFET
Power dissipation: 47W
Polarisation: unipolar
Case: TO247-4
Features of semiconductor devices: Kelvin terminal
Technology: CoolSiC™; SiC
Kind of channel: enhanced
Gate-source voltage: -7...23V
Pulsed drain current: 32A
Drain-source voltage: 1.2kV
Drain current: 13A
Category: THT N channel transistors
Description: Transistor: N-MOSFET; SiC; unipolar; 1.2kV; 13A; Idm: 32A; 47W
Mounting: THT
Kind of package: tube
On-state resistance: 265mΩ
Type of transistor: N-MOSFET
Power dissipation: 47W
Polarisation: unipolar
Case: TO247-4
Features of semiconductor devices: Kelvin terminal
Technology: CoolSiC™; SiC
Kind of channel: enhanced
Gate-source voltage: -7...23V
Pulsed drain current: 32A
Drain-source voltage: 1.2kV
Drain current: 13A
Produkt ist nicht verfügbar
| IMZ120R350M1HXKSA1 |
|
Hersteller: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; SiC; unipolar; 1.2kV; 4.7A; Idm: 13A; 30W
Kind of package: tube
Mounting: THT
Drain current: 4.7A
Kind of channel: enhanced
Drain-source voltage: 1.2kV
Type of transistor: N-MOSFET
Case: TO247-4
On-state resistance: 662mΩ
Gate-source voltage: -7...23V
Pulsed drain current: 13A
Power dissipation: 30W
Polarisation: unipolar
Technology: CoolSiC™; SiC
Features of semiconductor devices: Kelvin terminal
Category: THT N channel transistors
Description: Transistor: N-MOSFET; SiC; unipolar; 1.2kV; 4.7A; Idm: 13A; 30W
Kind of package: tube
Mounting: THT
Drain current: 4.7A
Kind of channel: enhanced
Drain-source voltage: 1.2kV
Type of transistor: N-MOSFET
Case: TO247-4
On-state resistance: 662mΩ
Gate-source voltage: -7...23V
Pulsed drain current: 13A
Power dissipation: 30W
Polarisation: unipolar
Technology: CoolSiC™; SiC
Features of semiconductor devices: Kelvin terminal
Produkt ist nicht verfügbar
| 1ED020I12F2XUMA1 |
|
Hersteller: INFINEON TECHNOLOGIES
Category: MOSFET/IGBT drivers
Description: IC: driver; single transistor; high-side,IGBT gate driver; -2÷2A
Type of integrated circuit: driver
Topology: single transistor
Kind of integrated circuit: high-side; IGBT gate driver
Technology: EiceDRIVER™
Case: PG-DSO-16-15
Output current: -2...2A
Number of channels: 1
Supply voltage: 0...28V; 4.5...5.5V
Integrated circuit features: active Miller clamp; galvanically isolated
Mounting: SMD
Kind of package: reel; tape
Voltage class: 0.6/1.2kV
Protection: undervoltage UVP
Category: MOSFET/IGBT drivers
Description: IC: driver; single transistor; high-side,IGBT gate driver; -2÷2A
Type of integrated circuit: driver
Topology: single transistor
Kind of integrated circuit: high-side; IGBT gate driver
Technology: EiceDRIVER™
Case: PG-DSO-16-15
Output current: -2...2A
Number of channels: 1
Supply voltage: 0...28V; 4.5...5.5V
Integrated circuit features: active Miller clamp; galvanically isolated
Mounting: SMD
Kind of package: reel; tape
Voltage class: 0.6/1.2kV
Protection: undervoltage UVP
auf Bestellung 496 Stücke:
Lieferzeit 14-21 Tag (e)| Anzahl | Preis ohne MwSt |
|---|---|
| 12+ | 6.21 EUR |
| 16+ | 4.49 EUR |
| 1ED020I12B2XUMA1 |
|
Hersteller: INFINEON TECHNOLOGIES
Category: MOSFET/IGBT drivers
Description: IC: driver; single transistor; high-side,gate driver; -2÷2A; Ch: 1
Type of integrated circuit: driver
Topology: single transistor
Kind of integrated circuit: gate driver; high-side
Technology: EiceDRIVER™
Case: PG-DSO-16-15
Output current: -2...2A
Number of channels: 1
Supply voltage: 0...28V; 4.5...5.5V
Integrated circuit features: active Miller clamp; galvanically isolated
Mounting: SMD
Kind of package: reel; tape
Voltage class: 0.6/1.2kV
Protection: undervoltage UVP
Category: MOSFET/IGBT drivers
Description: IC: driver; single transistor; high-side,gate driver; -2÷2A; Ch: 1
Type of integrated circuit: driver
Topology: single transistor
Kind of integrated circuit: gate driver; high-side
Technology: EiceDRIVER™
Case: PG-DSO-16-15
Output current: -2...2A
Number of channels: 1
Supply voltage: 0...28V; 4.5...5.5V
Integrated circuit features: active Miller clamp; galvanically isolated
Mounting: SMD
Kind of package: reel; tape
Voltage class: 0.6/1.2kV
Protection: undervoltage UVP
Produkt ist nicht verfügbar
| 1ED020I12FA2XUMA2 |
|
Hersteller: INFINEON TECHNOLOGIES
Category: MOSFET/IGBT drivers
Description: IC: driver; single transistor; high-side,IGBT gate driver; -2÷2A
Type of integrated circuit: driver
Topology: single transistor
Kind of integrated circuit: high-side; IGBT gate driver
Technology: EiceDRIVER™
Case: PG-DSO-20
Output current: -2...2A
Number of channels: 1
Supply voltage: 0...28V; 4.5...5.5V
Integrated circuit features: active Miller clamp; galvanically isolated
Mounting: SMD
Kind of package: reel; tape
Voltage class: 0.6/1.2kV
Protection: undervoltage UVP
Category: MOSFET/IGBT drivers
Description: IC: driver; single transistor; high-side,IGBT gate driver; -2÷2A
Type of integrated circuit: driver
Topology: single transistor
Kind of integrated circuit: high-side; IGBT gate driver
Technology: EiceDRIVER™
Case: PG-DSO-20
Output current: -2...2A
Number of channels: 1
Supply voltage: 0...28V; 4.5...5.5V
Integrated circuit features: active Miller clamp; galvanically isolated
Mounting: SMD
Kind of package: reel; tape
Voltage class: 0.6/1.2kV
Protection: undervoltage UVP
Produkt ist nicht verfügbar
| 1ED020I12FXUMA2 |
|
Hersteller: INFINEON TECHNOLOGIES
Category: MOSFET/IGBT drivers
Description: IC: driver; single transistor; high-side,gate driver; -2÷2A; Ch: 1
Type of integrated circuit: driver
Topology: single transistor
Kind of integrated circuit: gate driver; high-side
Technology: EiceDRIVER™
Case: PG-DSO-16-15
Output current: -2...2A
Number of channels: 1
Supply voltage: 0...28V; 4.5...5.5V
Integrated circuit features: active Miller clamp; galvanically isolated
Mounting: SMD
Kind of package: reel; tape
Voltage class: 0.6/1.2kV
Protection: undervoltage UVP
Category: MOSFET/IGBT drivers
Description: IC: driver; single transistor; high-side,gate driver; -2÷2A; Ch: 1
Type of integrated circuit: driver
Topology: single transistor
Kind of integrated circuit: gate driver; high-side
Technology: EiceDRIVER™
Case: PG-DSO-16-15
Output current: -2...2A
Number of channels: 1
Supply voltage: 0...28V; 4.5...5.5V
Integrated circuit features: active Miller clamp; galvanically isolated
Mounting: SMD
Kind of package: reel; tape
Voltage class: 0.6/1.2kV
Protection: undervoltage UVP
Produkt ist nicht verfügbar
| 2EDL05I06BFXUMA1 |
|
Hersteller: INFINEON TECHNOLOGIES
Category: MOSFET/IGBT drivers
Description: IC: driver; IGBT half-bridge; high-/low-side,IGBT gate driver
Integrated circuit features: integrated bootstrap functionality
Kind of package: reel; tape
Mounting: SMD
Technology: EiceDRIVER™
Kind of integrated circuit: high-/low-side; IGBT gate driver
Topology: IGBT half-bridge
Case: PG-DSO-8
Voltage class: 600V
Supply voltage: 10...20V
Output current: -0.7...0.36A
Type of integrated circuit: driver
Number of channels: 2
Category: MOSFET/IGBT drivers
Description: IC: driver; IGBT half-bridge; high-/low-side,IGBT gate driver
Integrated circuit features: integrated bootstrap functionality
Kind of package: reel; tape
Mounting: SMD
Technology: EiceDRIVER™
Kind of integrated circuit: high-/low-side; IGBT gate driver
Topology: IGBT half-bridge
Case: PG-DSO-8
Voltage class: 600V
Supply voltage: 10...20V
Output current: -0.7...0.36A
Type of integrated circuit: driver
Number of channels: 2
Produkt ist nicht verfügbar
| 2EDL05I06PJXUMA1 |
|
Hersteller: INFINEON TECHNOLOGIES
Category: MOSFET/IGBT drivers
Description: IC: driver; IGBT half-bridge; high-/low-side,IGBT gate driver
Type of integrated circuit: driver
Topology: IGBT half-bridge
Kind of integrated circuit: high-/low-side; IGBT gate driver
Technology: EiceDRIVER™
Case: PG-DSO-14
Output current: -0.7...0.36A
Number of channels: 2
Supply voltage: 10...20V
Integrated circuit features: integrated bootstrap functionality
Mounting: SMD
Kind of package: reel; tape
Voltage class: 600V
Category: MOSFET/IGBT drivers
Description: IC: driver; IGBT half-bridge; high-/low-side,IGBT gate driver
Type of integrated circuit: driver
Topology: IGBT half-bridge
Kind of integrated circuit: high-/low-side; IGBT gate driver
Technology: EiceDRIVER™
Case: PG-DSO-14
Output current: -0.7...0.36A
Number of channels: 2
Supply voltage: 10...20V
Integrated circuit features: integrated bootstrap functionality
Mounting: SMD
Kind of package: reel; tape
Voltage class: 600V
Produkt ist nicht verfügbar
| IAUT200N08S5N023ATMA1 |
|
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 80V; 200A; 200W; PG-HSOF-8
Kind of channel: enhanced
Drain-source voltage: 80V
Type of transistor: N-MOSFET
Kind of package: reel; tape
Case: PG-HSOF-8
On-state resistance: 2.3mΩ
Gate-source voltage: ±20V
Mounting: SMD
Power dissipation: 200W
Gate charge: 36nC
Polarisation: unipolar
Technology: OptiMOS™ 5
Drain current: 200A
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 80V; 200A; 200W; PG-HSOF-8
Kind of channel: enhanced
Drain-source voltage: 80V
Type of transistor: N-MOSFET
Kind of package: reel; tape
Case: PG-HSOF-8
On-state resistance: 2.3mΩ
Gate-source voltage: ±20V
Mounting: SMD
Power dissipation: 200W
Gate charge: 36nC
Polarisation: unipolar
Technology: OptiMOS™ 5
Drain current: 200A
Produkt ist nicht verfügbar
| BFP640H6327XTSA1 |
|
Hersteller: INFINEON TECHNOLOGIES
Category: NPN SMD transistors
Description: Transistor: NPN; SiGe: C; bipolar; RF; 4.1V; 50mA; 0.2W; SOT343
Type of transistor: NPN
Technology: SiGe:C
Polarisation: bipolar
Kind of transistor: RF
Collector-emitter voltage: 4.1V
Collector current: 50mA
Power dissipation: 0.2W
Case: SOT343
Current gain: 110...270
Mounting: SMD
Kind of package: reel; tape
Frequency: 42GHz
Category: NPN SMD transistors
Description: Transistor: NPN; SiGe: C; bipolar; RF; 4.1V; 50mA; 0.2W; SOT343
Type of transistor: NPN
Technology: SiGe:C
Polarisation: bipolar
Kind of transistor: RF
Collector-emitter voltage: 4.1V
Collector current: 50mA
Power dissipation: 0.2W
Case: SOT343
Current gain: 110...270
Mounting: SMD
Kind of package: reel; tape
Frequency: 42GHz
auf Bestellung 3000 Stücke:
Lieferzeit 14-21 Tag (e)| Anzahl | Preis ohne MwSt |
|---|---|
| 175+ | 0.41 EUR |
| 210+ | 0.34 EUR |
| 243+ | 0.3 EUR |
| 257+ | 0.28 EUR |
| 3000+ | 0.27 EUR |
| BFP760H6327XTSA1 |
|
Hersteller: INFINEON TECHNOLOGIES
Category: NPN SMD transistors
Description: Transistor: NPN; SiGe: C; bipolar; HBT,RF; 13V; 70mA; 0.24W; SOT343
Type of transistor: NPN
Technology: SiGe:C
Polarisation: bipolar
Kind of transistor: HBT; RF
Collector-emitter voltage: 13V
Collector current: 70mA
Power dissipation: 0.24W
Case: SOT343
Current gain: 160...400
Mounting: SMD
Kind of package: reel; tape
Frequency: 45GHz
Category: NPN SMD transistors
Description: Transistor: NPN; SiGe: C; bipolar; HBT,RF; 13V; 70mA; 0.24W; SOT343
Type of transistor: NPN
Technology: SiGe:C
Polarisation: bipolar
Kind of transistor: HBT; RF
Collector-emitter voltage: 13V
Collector current: 70mA
Power dissipation: 0.24W
Case: SOT343
Current gain: 160...400
Mounting: SMD
Kind of package: reel; tape
Frequency: 45GHz
auf Bestellung 2410 Stücke:
Lieferzeit 14-21 Tag (e)| Anzahl | Preis ohne MwSt |
|---|---|
| 167+ | 0.43 EUR |
| 186+ | 0.39 EUR |
| 236+ | 0.3 EUR |
| 249+ | 0.29 EUR |
| BCR402UE6433HTMA1 |
|
Hersteller: INFINEON TECHNOLOGIES
Category: LED drivers
Description: IC: driver; single transistor; current regulator,LED driver
Type of integrated circuit: driver
Topology: single transistor
Kind of integrated circuit: current regulator; LED driver
Case: SC74
Output current: 20...65mA
Number of channels: 1
Integrated circuit features: linear dimming
Mounting: SMD
Operating voltage: 1.4...40V
Category: LED drivers
Description: IC: driver; single transistor; current regulator,LED driver
Type of integrated circuit: driver
Topology: single transistor
Kind of integrated circuit: current regulator; LED driver
Case: SC74
Output current: 20...65mA
Number of channels: 1
Integrated circuit features: linear dimming
Mounting: SMD
Operating voltage: 1.4...40V
Produkt ist nicht verfügbar
| BCR420UE6433HTMA1 |
|
Hersteller: INFINEON TECHNOLOGIES
Category: LED drivers
Description: IC: driver; single transistor; current regulator,LED driver
Type of integrated circuit: driver
Topology: single transistor
Kind of integrated circuit: current regulator; LED driver
Case: SC74
Output current: 150...200mA
Number of channels: 1
Integrated circuit features: linear dimming
Mounting: SMD
Operating voltage: 1.4...40V
Category: LED drivers
Description: IC: driver; single transistor; current regulator,LED driver
Type of integrated circuit: driver
Topology: single transistor
Kind of integrated circuit: current regulator; LED driver
Case: SC74
Output current: 150...200mA
Number of channels: 1
Integrated circuit features: linear dimming
Mounting: SMD
Operating voltage: 1.4...40V
Produkt ist nicht verfügbar
| IPP034N03LGXKSA1 |
|
Hersteller: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 80A; 94W; PG-TO220-3
Type of transistor: N-MOSFET
Technology: OptiMOS™ 3
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 80A
Power dissipation: 94W
Case: PG-TO220-3
Gate-source voltage: ±20V
On-state resistance: 3.4mΩ
Mounting: THT
Kind of package: tube
Kind of channel: enhanced
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 80A; 94W; PG-TO220-3
Type of transistor: N-MOSFET
Technology: OptiMOS™ 3
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 80A
Power dissipation: 94W
Case: PG-TO220-3
Gate-source voltage: ±20V
On-state resistance: 3.4mΩ
Mounting: THT
Kind of package: tube
Kind of channel: enhanced
Produkt ist nicht verfügbar
| IAUA170N10S5N031AUMA1 |
|
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 22A; Idm: 519A; 197W
Type of transistor: N-MOSFET
Technology: OptiMOS™ 5
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 22A
Pulsed drain current: 519A
Power dissipation: 197W
Case: PG-HSOF-5
Gate-source voltage: ±20V
On-state resistance: 4mΩ
Mounting: SMD
Gate charge: 88nC
Kind of package: reel; tape
Kind of channel: enhanced
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 22A; Idm: 519A; 197W
Type of transistor: N-MOSFET
Technology: OptiMOS™ 5
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 22A
Pulsed drain current: 519A
Power dissipation: 197W
Case: PG-HSOF-5
Gate-source voltage: ±20V
On-state resistance: 4mΩ
Mounting: SMD
Gate charge: 88nC
Kind of package: reel; tape
Kind of channel: enhanced
Produkt ist nicht verfügbar
| FD300R06KE3HOSA1 |
|
Hersteller: INFINEON TECHNOLOGIES
Category: IGBT modules
Description: Module: IGBT; diode/transistor; boost chopper; Urmax: 600V; screw
Application: frequency changer; Inverter
Topology: boost chopper
Mechanical mounting: screw
Pulsed collector current: 600A
Max. off-state voltage: 0.6kV
Electrical mounting: screw
Type of module: IGBT
Semiconductor structure: diode/transistor
Case: AG-62MM-1
Gate-emitter voltage: ±20V
Collector current: 300A
Category: IGBT modules
Description: Module: IGBT; diode/transistor; boost chopper; Urmax: 600V; screw
Application: frequency changer; Inverter
Topology: boost chopper
Mechanical mounting: screw
Pulsed collector current: 600A
Max. off-state voltage: 0.6kV
Electrical mounting: screw
Type of module: IGBT
Semiconductor structure: diode/transistor
Case: AG-62MM-1
Gate-emitter voltage: ±20V
Collector current: 300A
Produkt ist nicht verfügbar
| FD300R12KE3HOSA1 |
|
Hersteller: INFINEON TECHNOLOGIES
Category: IGBT modules
Description: Module: IGBT; diode/transistor; boost chopper; Urmax: 1.2kV; screw
Type of module: IGBT
Semiconductor structure: diode/transistor
Max. off-state voltage: 1.2kV
Case: AG-62MM-1
Electrical mounting: screw
Mechanical mounting: screw
Topology: boost chopper
Gate-emitter voltage: ±20V
Collector current: 300A
Pulsed collector current: 600A
Application: frequency changer; Inverter
Power dissipation: 1.47kW
Category: IGBT modules
Description: Module: IGBT; diode/transistor; boost chopper; Urmax: 1.2kV; screw
Type of module: IGBT
Semiconductor structure: diode/transistor
Max. off-state voltage: 1.2kV
Case: AG-62MM-1
Electrical mounting: screw
Mechanical mounting: screw
Topology: boost chopper
Gate-emitter voltage: ±20V
Collector current: 300A
Pulsed collector current: 600A
Application: frequency changer; Inverter
Power dissipation: 1.47kW
Produkt ist nicht verfügbar
| FF300R06KE3 |
|
Hersteller: INFINEON TECHNOLOGIES
Category: IGBT modules
Description: Module: IGBT; transistor/transistor; IGBT half-bridge; Ic: 300A
Topology: IGBT half-bridge
Power dissipation: 940W
Mechanical mounting: screw
Pulsed collector current: 600A
Max. off-state voltage: 0.6kV
Electrical mounting: screw
Type of module: IGBT
Semiconductor structure: transistor/transistor
Case: AG-62MM-1
Gate-emitter voltage: ±20V
Collector current: 300A
Category: IGBT modules
Description: Module: IGBT; transistor/transistor; IGBT half-bridge; Ic: 300A
Topology: IGBT half-bridge
Power dissipation: 940W
Mechanical mounting: screw
Pulsed collector current: 600A
Max. off-state voltage: 0.6kV
Electrical mounting: screw
Type of module: IGBT
Semiconductor structure: transistor/transistor
Case: AG-62MM-1
Gate-emitter voltage: ±20V
Collector current: 300A
Produkt ist nicht verfügbar
| FF300R12KE3 | |
|
Hersteller: INFINEON TECHNOLOGIES
Category: IGBT modules
Description: Module: IGBT; transistor/transistor; IGBT half-bridge; Ic: 300A
Case: AG-62MM-1
Pulsed collector current: 600A
Max. off-state voltage: 1.2kV
Electrical mounting: screw
Type of module: IGBT
Semiconductor structure: transistor/transistor
Gate-emitter voltage: ±20V
Collector current: 300A
Topology: IGBT half-bridge
Power dissipation: 1.45kW
Mechanical mounting: screw
Category: IGBT modules
Description: Module: IGBT; transistor/transistor; IGBT half-bridge; Ic: 300A
Case: AG-62MM-1
Pulsed collector current: 600A
Max. off-state voltage: 1.2kV
Electrical mounting: screw
Type of module: IGBT
Semiconductor structure: transistor/transistor
Gate-emitter voltage: ±20V
Collector current: 300A
Topology: IGBT half-bridge
Power dissipation: 1.45kW
Mechanical mounting: screw
Produkt ist nicht verfügbar
| FF300R12KT3EHOSA1 |
|
Hersteller: INFINEON TECHNOLOGIES
Category: IGBT modules
Description: Module: IGBT; transistor/transistor,common emitter; IGBT x2
Type of module: IGBT
Semiconductor structure: common emitter; transistor/transistor
Max. off-state voltage: 1.2kV
Case: AG-62MM-1
Electrical mounting: FASTON connectors; screw
Mechanical mounting: screw
Topology: IGBT x2
Gate-emitter voltage: ±20V
Collector current: 300A
Pulsed collector current: 600A
Power dissipation: 1.45kW
Category: IGBT modules
Description: Module: IGBT; transistor/transistor,common emitter; IGBT x2
Type of module: IGBT
Semiconductor structure: common emitter; transistor/transistor
Max. off-state voltage: 1.2kV
Case: AG-62MM-1
Electrical mounting: FASTON connectors; screw
Mechanical mounting: screw
Topology: IGBT x2
Gate-emitter voltage: ±20V
Collector current: 300A
Pulsed collector current: 600A
Power dissipation: 1.45kW
Produkt ist nicht verfügbar
| FF300R12KT4HOSA1 |
|
Hersteller: INFINEON TECHNOLOGIES
Category: IGBT modules
Description: Module: IGBT; transistor/transistor; IGBT half-bridge; Ic: 300A
Type of module: IGBT
Semiconductor structure: transistor/transistor
Max. off-state voltage: 1.2kV
Case: AG-62MM-1
Electrical mounting: screw
Mechanical mounting: screw
Topology: IGBT half-bridge
Gate-emitter voltage: ±20V
Collector current: 300A
Pulsed collector current: 600A
Power dissipation: 1.6kW
Category: IGBT modules
Description: Module: IGBT; transistor/transistor; IGBT half-bridge; Ic: 300A
Type of module: IGBT
Semiconductor structure: transistor/transistor
Max. off-state voltage: 1.2kV
Case: AG-62MM-1
Electrical mounting: screw
Mechanical mounting: screw
Topology: IGBT half-bridge
Gate-emitter voltage: ±20V
Collector current: 300A
Pulsed collector current: 600A
Power dissipation: 1.6kW
Produkt ist nicht verfügbar
| FF300R17ME4BOSA1 |
|
Hersteller: INFINEON TECHNOLOGIES
Category: IGBT modules
Description: Module: IGBT; transistor/transistor; IGBT half-bridge; Ic: 300A
Case: AG-ECONOD-3
Power dissipation: 1.8kW
Technology: EconoDUAL™ 3
Mechanical mounting: screw
Pulsed collector current: 600A
Max. off-state voltage: 1.7kV
Electrical mounting: Press-in PCB
Type of module: IGBT
Semiconductor structure: transistor/transistor
Gate-emitter voltage: ±20V
Collector current: 300A
Topology: IGBT half-bridge; NTC thermistor
Category: IGBT modules
Description: Module: IGBT; transistor/transistor; IGBT half-bridge; Ic: 300A
Case: AG-ECONOD-3
Power dissipation: 1.8kW
Technology: EconoDUAL™ 3
Mechanical mounting: screw
Pulsed collector current: 600A
Max. off-state voltage: 1.7kV
Electrical mounting: Press-in PCB
Type of module: IGBT
Semiconductor structure: transistor/transistor
Gate-emitter voltage: ±20V
Collector current: 300A
Topology: IGBT half-bridge; NTC thermistor
Produkt ist nicht verfügbar
| F3L300R07PE4 |
|
Hersteller: INFINEON TECHNOLOGIES
Category: IGBT modules
Description: Module: IGBT; diode/transistor; Urmax: 650V; Ic: 300A; AG-ECONO4-1
Type of module: IGBT
Semiconductor structure: diode/transistor
Topology: NTC thermistor; three-level inverter; single-phase
Max. off-state voltage: 650V
Collector current: 300A
Case: AG-ECONO4-1
Electrical mounting: Press-Fit; screw
Gate-emitter voltage: ±20V
Pulsed collector current: 600A
Power dissipation: 940W
Technology: EconoPACK™ 4
Mechanical mounting: screw
Category: IGBT modules
Description: Module: IGBT; diode/transistor; Urmax: 650V; Ic: 300A; AG-ECONO4-1
Type of module: IGBT
Semiconductor structure: diode/transistor
Topology: NTC thermistor; three-level inverter; single-phase
Max. off-state voltage: 650V
Collector current: 300A
Case: AG-ECONO4-1
Electrical mounting: Press-Fit; screw
Gate-emitter voltage: ±20V
Pulsed collector current: 600A
Power dissipation: 940W
Technology: EconoPACK™ 4
Mechanical mounting: screw
Produkt ist nicht verfügbar
| BSO211PHXUMA1 |
|
Hersteller: INFINEON TECHNOLOGIES
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -20V; -4.6A; 1.6W; PG-DSO-8
Type of transistor: P-MOSFET
Technology: OptiMOS™ P
Polarisation: unipolar
Drain-source voltage: -20V
Drain current: -4.6A
Power dissipation: 1.6W
Case: PG-DSO-8
Gate-source voltage: ±12V
On-state resistance: 67mΩ
Mounting: SMD
Kind of channel: enhanced
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -20V; -4.6A; 1.6W; PG-DSO-8
Type of transistor: P-MOSFET
Technology: OptiMOS™ P
Polarisation: unipolar
Drain-source voltage: -20V
Drain current: -4.6A
Power dissipation: 1.6W
Case: PG-DSO-8
Gate-source voltage: ±12V
On-state resistance: 67mΩ
Mounting: SMD
Kind of channel: enhanced
auf Bestellung 2453 Stücke:
Lieferzeit 14-21 Tag (e)| Anzahl | Preis ohne MwSt |
|---|---|
| 193+ | 0.37 EUR |
| 200+ | 0.36 EUR |
| IRFR2405TRLPBF |
|
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 55V; 56A; 110W; DPAK
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 55V
Drain current: 56A
Power dissipation: 110W
Case: DPAK
Mounting: SMD
Kind of package: reel
Kind of channel: enhanced
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 55V; 56A; 110W; DPAK
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 55V
Drain current: 56A
Power dissipation: 110W
Case: DPAK
Mounting: SMD
Kind of package: reel
Kind of channel: enhanced
Produkt ist nicht verfügbar
| IRFR2405TRPBF | |
|
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 55V; 56A; 110W; DPAK
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 55V
Drain current: 56A
Power dissipation: 110W
Case: DPAK
Mounting: SMD
Kind of package: reel
Kind of channel: enhanced
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 55V; 56A; 110W; DPAK
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 55V
Drain current: 56A
Power dissipation: 110W
Case: DPAK
Mounting: SMD
Kind of package: reel
Kind of channel: enhanced
Produkt ist nicht verfügbar
| IRFR2407TRPBF |
|
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 75V; 42A; 110W; DPAK
Power dissipation: 110W
Polarisation: unipolar
Technology: HEXFET®
Drain current: 42A
Kind of channel: enhanced
Drain-source voltage: 75V
Type of transistor: N-MOSFET
Kind of package: reel
Case: DPAK
Mounting: SMD
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 75V; 42A; 110W; DPAK
Power dissipation: 110W
Polarisation: unipolar
Technology: HEXFET®
Drain current: 42A
Kind of channel: enhanced
Drain-source voltage: 75V
Type of transistor: N-MOSFET
Kind of package: reel
Case: DPAK
Mounting: SMD
Produkt ist nicht verfügbar
| IRFR2607ZTRPBF |
|
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 75V; 45A; 110W; DPAK
Mounting: SMD
Drain-source voltage: 75V
Drain current: 45A
Type of transistor: N-MOSFET
Power dissipation: 110W
Polarisation: unipolar
Kind of package: reel
Technology: HEXFET®
Kind of channel: enhanced
Case: DPAK
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 75V; 45A; 110W; DPAK
Mounting: SMD
Drain-source voltage: 75V
Drain current: 45A
Type of transistor: N-MOSFET
Power dissipation: 110W
Polarisation: unipolar
Kind of package: reel
Technology: HEXFET®
Kind of channel: enhanced
Case: DPAK
Produkt ist nicht verfügbar
| IRF6645TRPBF |
|
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 5.7A; 42W; DirectFET
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 5.7A
Power dissipation: 42W
Case: DirectFET
Mounting: SMD
Kind of package: reel
Kind of channel: enhanced
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 5.7A; 42W; DirectFET
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 5.7A
Power dissipation: 42W
Case: DirectFET
Mounting: SMD
Kind of package: reel
Kind of channel: enhanced
Produkt ist nicht verfügbar
| IRF6646TRPBF |
|
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 80V; 12A; 89W; DirectFET
Case: DirectFET
Mounting: SMD
Kind of package: reel
Power dissipation: 89W
Polarisation: unipolar
Technology: HEXFET®
Kind of channel: enhanced
Drain-source voltage: 80V
Drain current: 12A
Type of transistor: N-MOSFET
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 80V; 12A; 89W; DirectFET
Case: DirectFET
Mounting: SMD
Kind of package: reel
Power dissipation: 89W
Polarisation: unipolar
Technology: HEXFET®
Kind of channel: enhanced
Drain-source voltage: 80V
Drain current: 12A
Type of transistor: N-MOSFET
Produkt ist nicht verfügbar
| IRF6655TRPBF |
|
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 4.2A; 42W; DirectFET
Mounting: SMD
Power dissipation: 42W
Polarisation: unipolar
Technology: HEXFET®
Drain current: 4.2A
Kind of channel: enhanced
Drain-source voltage: 100V
Type of transistor: N-MOSFET
Kind of package: reel
Case: DirectFET
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 4.2A; 42W; DirectFET
Mounting: SMD
Power dissipation: 42W
Polarisation: unipolar
Technology: HEXFET®
Drain current: 4.2A
Kind of channel: enhanced
Drain-source voltage: 100V
Type of transistor: N-MOSFET
Kind of package: reel
Case: DirectFET
Produkt ist nicht verfügbar
| IRF7606TRPBF |
|
Hersteller: INFINEON TECHNOLOGIES
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -30V; -3.6A; 1.8W; Micro8
Type of transistor: P-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: -30V
Drain current: -3.6A
Power dissipation: 1.8W
Case: Micro8
Mounting: SMD
Kind of package: reel
Kind of channel: enhanced
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -30V; -3.6A; 1.8W; Micro8
Type of transistor: P-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: -30V
Drain current: -3.6A
Power dissipation: 1.8W
Case: Micro8
Mounting: SMD
Kind of package: reel
Kind of channel: enhanced
Produkt ist nicht verfügbar
| IRF6712STRPBF |
|
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 25V; 17A; 36W; DirectFET
Mounting: SMD
Kind of package: reel
Type of transistor: N-MOSFET
Power dissipation: 36W
Polarisation: unipolar
Technology: HEXFET®
Kind of channel: enhanced
Case: DirectFET
Drain-source voltage: 25V
Drain current: 17A
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 25V; 17A; 36W; DirectFET
Mounting: SMD
Kind of package: reel
Type of transistor: N-MOSFET
Power dissipation: 36W
Polarisation: unipolar
Technology: HEXFET®
Kind of channel: enhanced
Case: DirectFET
Drain-source voltage: 25V
Drain current: 17A
Produkt ist nicht verfügbar