Produkte > INFINEON TECHNOLOGIES > Alle Produkte des Herstellers INFINEON TECHNOLOGIES (133559) > Seite 2195 nach 2226
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IPA60R165CPXKSA1 | INFINEON TECHNOLOGIES |
 Category: THT N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 600V; 21A; 34W; TO220FP Type of transistor: N-MOSFET Technology: CoolMOS™ CP Polarisation: unipolar Drain-source voltage: 600V Drain current: 21A Power dissipation: 34W Case: TO220FP Gate-source voltage: ±20V On-state resistance: 0.165Ω Mounting: THT Kind of package: tube Kind of channel: enhanced |
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IPA60R170CFD7XKSA1 | INFINEON TECHNOLOGIES |
Category: THT N channel transistors Description: Transistor: N-MOSFET; CoolMOS™ CFD7; unipolar; 650V; 5A; Idm: 51A Type of transistor: N-MOSFET Technology: CoolMOS™ CFD7 Polarisation: unipolar Drain-source voltage: 650V Drain current: 5A Pulsed drain current: 51A Power dissipation: 26W Case: TO220FP Gate-source voltage: ±20V On-state resistance: 0.17Ω Mounting: THT Gate charge: 28nC Kind of package: tube Kind of channel: enhanced |
auf Bestellung 1 Stücke: Lieferzeit 14-21 Tag (e) |
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IPA60R180P7SXKSA1 | INFINEON TECHNOLOGIES |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 650V; 11A; Idm: 53A; 20W; TO220FP Type of transistor: N-MOSFET Technology: CoolMOS™ P7 Polarisation: unipolar Drain-source voltage: 650V Drain current: 11A Pulsed drain current: 53A Power dissipation: 20W Case: TO220FP Gate-source voltage: ±20V On-state resistance: 0.18Ω Mounting: THT Gate charge: 25nC Kind of package: tube Kind of channel: enhanced |
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IPA60R180P7XKSA1 | INFINEON TECHNOLOGIES |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 650V; 11A; Idm: 53A; 26W; TO220FP Type of transistor: N-MOSFET Technology: CoolMOS™ P7 Polarisation: unipolar Drain-source voltage: 650V Drain current: 11A Pulsed drain current: 53A Power dissipation: 26W Case: TO220FP Gate-source voltage: ±20V On-state resistance: 0.18Ω Mounting: THT Gate charge: 25nC Kind of package: tube Kind of channel: enhanced Features of semiconductor devices: ESD protected gate |
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IPA60R190C6XKSA1 | INFINEON TECHNOLOGIES |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 600V; 20.2A; 34W; TO220FP Type of transistor: N-MOSFET Technology: CoolMOS™ C6 Polarisation: unipolar Drain-source voltage: 600V Drain current: 20.2A Power dissipation: 34W Case: TO220FP Gate-source voltage: ±20V On-state resistance: 0.19Ω Mounting: THT Kind of package: tube Kind of channel: enhanced |
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IPA60R190E6XKSA1 | INFINEON TECHNOLOGIES |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 600V; 20.2A; 34W; TO220FP Type of transistor: N-MOSFET Technology: CoolMOS™ E6 Polarisation: unipolar Drain-source voltage: 600V Drain current: 20.2A Power dissipation: 34W Case: TO220FP Gate-source voltage: ±20V On-state resistance: 0.19Ω Mounting: THT Kind of package: tube Kind of channel: enhanced |
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IPA60R190P6XKSA1 | INFINEON TECHNOLOGIES |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 600V; 20.2A; 34W; TO220FP Type of transistor: N-MOSFET Technology: CoolMOS™ P6 Polarisation: unipolar Drain-source voltage: 600V Drain current: 20.2A Power dissipation: 34W Case: TO220FP Gate-source voltage: ±20V On-state resistance: 0.19Ω Mounting: THT Kind of package: tube Kind of channel: enhanced |
auf Bestellung 2 Stücke: Lieferzeit 14-21 Tag (e) |
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IPA60R199CPXKSA1 | INFINEON TECHNOLOGIES |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 600V; 16A; 34W; TO220FP Type of transistor: N-MOSFET Technology: CoolMOS™ CP Polarisation: unipolar Drain-source voltage: 600V Drain current: 16A Power dissipation: 34W Case: TO220FP Gate-source voltage: ±20V On-state resistance: 0.199Ω Mounting: THT Kind of package: tube Kind of channel: enhanced |
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IPA60R230P6XKSA1 | INFINEON TECHNOLOGIES |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 600V; 16.8A; 33W; TO220FP Type of transistor: N-MOSFET Technology: CoolMOS™ P6 Polarisation: unipolar Drain-source voltage: 600V Drain current: 16.8A Power dissipation: 33W Case: TO220FP Gate-source voltage: ±20V On-state resistance: 0.23Ω Mounting: THT Kind of package: tube Kind of channel: enhanced |
auf Bestellung 340 Stücke: Lieferzeit 14-21 Tag (e) |
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IR2213SPBF | INFINEON TECHNOLOGIES |
Category: MOSFET/IGBT drivers Description: IC: driver; MOSFET half-bridge; high-/low-side,gate driver; SO16 Type of integrated circuit: driver Topology: MOSFET half-bridge Kind of integrated circuit: gate driver; high-/low-side Case: SO16 Output current: -2...1.7A Power: 1.25W Number of channels: 2 Supply voltage: 12...20V DC Mounting: SMD Operating temperature: -40...125°C Kind of package: tube Voltage class: 600V Turn-on time: 280ns Turn-off time: 225ns |
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IPB60R190C6ATMA1 | INFINEON TECHNOLOGIES |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 600V; 20.2A; 151W; PG-TO263-3 Type of transistor: N-MOSFET Technology: CoolMOS™ C6 Polarisation: unipolar Drain-source voltage: 600V Drain current: 20.2A Power dissipation: 151W Case: PG-TO263-3 Gate-source voltage: ±20V On-state resistance: 0.19Ω Mounting: SMD Kind of channel: enhanced |
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IPI60R190C6XKSA1 | INFINEON TECHNOLOGIES |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 600V; 20.2A; 151W; PG-TO262-3 Type of transistor: N-MOSFET Technology: CoolMOS™ C6 Polarisation: unipolar Drain-source voltage: 600V Drain current: 20.2A Power dissipation: 151W Case: PG-TO262-3 Gate-source voltage: ±20V On-state resistance: 0.19Ω Mounting: THT Kind of channel: enhanced |
auf Bestellung 27 Stücke: Lieferzeit 14-21 Tag (e) |
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IPP60R190C6XKSA1 | INFINEON TECHNOLOGIES |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 600V; 20.2A; 151W; PG-TO220-3 Type of transistor: N-MOSFET Technology: CoolMOS™ C6 Polarisation: unipolar Drain-source voltage: 600V Drain current: 20.2A Power dissipation: 151W Case: PG-TO220-3 Gate-source voltage: ±20V On-state resistance: 0.19Ω Mounting: THT Kind of package: tube Kind of channel: enhanced |
auf Bestellung 4 Stücke: Lieferzeit 14-21 Tag (e) |
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IPW60R190C6FKSA1 | INFINEON TECHNOLOGIES |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 600V; 20.2A; 151W; PG-TO247-3 Type of transistor: N-MOSFET Technology: CoolMOS™ C6 Polarisation: unipolar Drain-source voltage: 600V Drain current: 20.2A Power dissipation: 151W Case: PG-TO247-3 Gate-source voltage: ±20V On-state resistance: 0.19Ω Mounting: THT Kind of package: tube Kind of channel: enhanced |
auf Bestellung 18 Stücke: Lieferzeit 14-21 Tag (e) |
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PVDZ172NPBF | INFINEON TECHNOLOGIES |
 Category: One Phase Solid State RelaysDescription: Relay: solid state; SPST-NO; Icntrl: 5÷25mA; 1.5A; 0÷60VDC; 250mΩ Type of relay: solid state Contacts configuration: SPST-NO Control current: 5...25mA Max. operating current: 1.5A Switched voltage: 0...60V DC Relay variant: MOSFET On-state resistance: 0.25Ω Mounting: THT Case: DIP8 Operating temperature: -40...85°C Operate time: 2ms Release time: 0.5ms Relay series: PVDZ172NPbF |
auf Bestellung 35 Stücke: Lieferzeit 14-21 Tag (e) |
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| IMW65R048M1HXKSA1 | INFINEON TECHNOLOGIES |
Category: THT N channel transistors Description: Transistor: N-MOSFET; SiC; unipolar; 650V; 24A; Idm: 100A; 125W Case: TO247 Mounting: THT On-state resistance: 63mΩ Kind of package: tube Technology: CoolSiC™; SiC Pulsed drain current: 100A Power dissipation: 125W Polarisation: unipolar Drain current: 24A Kind of channel: enhanced Drain-source voltage: 650V Type of transistor: N-MOSFET Gate-source voltage: -5...23V |
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IMW120R045M1XKSA1 | INFINEON TECHNOLOGIES |
Category: THT N channel transistors Description: Transistor: N-MOSFET; SiC; unipolar; 1.2kV; 36A; Idm: 130A; 114W Kind of package: tube Mounting: THT Drain current: 36A On-state resistance: 59mΩ Type of transistor: N-MOSFET Power dissipation: 114W Polarisation: unipolar Technology: CoolSiC™; SiC Kind of channel: enhanced Gate-source voltage: -10...20V Pulsed drain current: 130A Case: TO247 Drain-source voltage: 1.2kV |
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AIMW120R045M1XKSA1 | INFINEON TECHNOLOGIES |
Category: THT N channel transistors Description: Transistor: N-MOSFET; SiC; unipolar; 1.2kV; 36A; Idm: 130A; 114W Mounting: THT Kind of package: tube Type of transistor: N-MOSFET On-state resistance: 75mΩ Drain current: 36A Drain-source voltage: 1.2kV Power dissipation: 114W Technology: CoolSiC™; SiC Case: TO247 Kind of channel: enhanced Gate-source voltage: -7...20V Pulsed drain current: 130A Polarisation: unipolar |
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| FS10R12VT3BOMA1 | INFINEON TECHNOLOGIES |
Category: IGBT modules Description: Module: IGBT; transistor/transistor; IGBT three-phase bridge Electrical mounting: Press-in PCB Type of module: IGBT Technology: EasyPACK™ Topology: IGBT three-phase bridge Case: AG-EASY750-1 Max. off-state voltage: 1.2kV Semiconductor structure: transistor/transistor Gate-emitter voltage: ±20V Collector current: 10A Pulsed collector current: 20A Power dissipation: 64W |
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IPP50R380CEXKSA1 | INFINEON TECHNOLOGIES |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 500V; 9.9A; 73W; PG-TO220-3 Type of transistor: N-MOSFET Technology: CoolMOS™ Polarisation: unipolar Drain-source voltage: 500V Drain current: 9.9A Power dissipation: 73W Case: PG-TO220-3 Gate-source voltage: ±20V On-state resistance: 0.38Ω Mounting: THT Kind of package: tube Kind of channel: enhanced |
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TT142N14KOF | INFINEON TECHNOLOGIES |
Category: Thyristor modules Description: Module: thyristor; double series; 1.4kV; 142A; BG-PB34-1; screw Type of module: thyristor Semiconductor structure: double series Max. off-state voltage: 1.4kV Load current: 142A Case: BG-PB34-1 Max. forward voltage: 1.56V Max. forward impulse current: 4.8kA Gate current: 150mA Electrical mounting: FASTON connectors; screw Mechanical mounting: screw |
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IRS21867SPBF | INFINEON TECHNOLOGIES |
Category: MOSFET/IGBT drivers Description: IC: driver; MOSFET half-bridge; high-/low-side,gate driver; SO8 Type of integrated circuit: driver Topology: MOSFET half-bridge Kind of integrated circuit: gate driver; high-/low-side Case: SO8 Output current: -4...4A Power: 625mW Number of channels: 2 Supply voltage: 10...20V DC Mounting: SMD Operating temperature: -40...125°C Kind of package: tube Voltage class: 600V Turn-on time: 192ns Turn-off time: 188ns |
auf Bestellung 1 Stücke: Lieferzeit 14-21 Tag (e) |
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IRS21867STRPBF | INFINEON TECHNOLOGIES |
Category: MOSFET/IGBT drivers Description: IC: driver; MOSFET half-bridge; high-/low-side,gate driver; SO8 Type of integrated circuit: driver Topology: MOSFET half-bridge Kind of integrated circuit: gate driver; high-/low-side Case: SO8 Output current: -4...4A Power: 625mW Number of channels: 2 Supply voltage: 10...20V DC Mounting: SMD Operating temperature: -40...125°C Kind of package: reel; tape Voltage class: 600V Turn-on time: 192ns Turn-off time: 188ns |
auf Bestellung 2316 Stücke: Lieferzeit 14-21 Tag (e) |
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IRFB5615PBF | INFINEON TECHNOLOGIES |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 150V; 35A; 144W; TO220AB Type of transistor: N-MOSFET Technology: HEXFET® Polarisation: unipolar Drain-source voltage: 150V Drain current: 35A Power dissipation: 144W Case: TO220AB Gate-source voltage: ±20V On-state resistance: 39mΩ Mounting: THT Gate charge: 26nC Kind of package: tube Kind of channel: enhanced |
auf Bestellung 133 Stücke: Lieferzeit 14-21 Tag (e) |
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2EDF7175FXUMA1 | INFINEON TECHNOLOGIES |
Category: MOSFET/IGBT drivers Description: IC: driver; MOSFET half-bridge; high-side,MOSFET gate driver Kind of package: reel; tape Output current: -2...1A Type of integrated circuit: driver Number of channels: 2 Integrated circuit features: galvanically isolated Technology: EiceDRIVER™ Kind of integrated circuit: high-side; MOSFET gate driver Topology: MOSFET half-bridge Voltage class: 650V Mounting: SMD Case: PG-DSO-16 Supply voltage: 3...3.5V; 4.5...20V |
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2EDL05N06PFXUMA1 | INFINEON TECHNOLOGIES |
Category: MOSFET/IGBT drivers Description: IC: driver; MOSFET half-bridge; EiceDRIVER™; PG-DSO-8; -0.7÷0.36A Integrated circuit features: integrated bootstrap functionality Kind of package: reel; tape Mounting: SMD Technology: EiceDRIVER™ Kind of integrated circuit: high-/low-side; MOSFET gate driver Topology: MOSFET half-bridge Case: PG-DSO-8 Voltage class: 600V Supply voltage: 10...20V Output current: -0.7...0.36A Type of integrated circuit: driver Number of channels: 2 |
auf Bestellung 1678 Stücke: Lieferzeit 14-21 Tag (e) |
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| 2EDL05N06PJXUMA1 | INFINEON TECHNOLOGIES |
Category: MOSFET/IGBT drivers Description: IC: driver; MOSFET half-bridge; EiceDRIVER™; PG-DSO-14; Ch: 2 Integrated circuit features: integrated bootstrap functionality Kind of package: reel; tape Mounting: SMD Technology: EiceDRIVER™ Kind of integrated circuit: high-/low-side; MOSFET gate driver Topology: MOSFET half-bridge Case: PG-DSO-14 Voltage class: 600V Supply voltage: 10...20V Output current: -0.7...0.36A Type of integrated circuit: driver Number of channels: 2 |
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2EDL23N06PJXUMA1 | INFINEON TECHNOLOGIES |
Category: MOSFET/IGBT drivers Description: IC: driver; MOSFET half-bridge; EiceDRIVER™; PG-DSO-14; -2.5÷1.8A Technology: EiceDRIVER™ Case: PG-DSO-14 Mounting: SMD Kind of package: reel; tape Output current: -2.5...1.8A Topology: MOSFET half-bridge Integrated circuit features: integrated bootstrap functionality Type of integrated circuit: driver Kind of integrated circuit: high-/low-side; MOSFET gate driver Supply voltage: 10...20V Number of channels: 2 Voltage class: 600V |
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2EDN7524FXTMA1 | INFINEON TECHNOLOGIES |
Category: MOSFET/IGBT drivers Description: IC: driver; MOSFET half-bridge; low-side,gate driver; PG-DSO-8 Type of integrated circuit: driver Mounting: SMD Number of channels: 2 Case: PG-DSO-8 Kind of package: reel; tape Kind of integrated circuit: gate driver; low-side Output current: -5...5A Protection: undervoltage UVP Technology: EiceDRIVER™ Topology: MOSFET half-bridge Voltage class: 20V Supply voltage: 4.5...20V |
auf Bestellung 1860 Stücke: Lieferzeit 14-21 Tag (e) |
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2EDS8165HXUMA1 | INFINEON TECHNOLOGIES |
Category: MOSFET/IGBT drivers Description: IC: driver; MOSFET half-bridge; high-side,MOSFET gate driver Type of integrated circuit: driver Topology: MOSFET half-bridge Kind of integrated circuit: high-side; MOSFET gate driver Technology: EiceDRIVER™ Case: PG-DSO-16 Output current: -2...1A Number of channels: 2 Supply voltage: 3...3.5V; 4.5...20V Integrated circuit features: galvanically isolated Mounting: SMD Kind of package: reel; tape Voltage class: 650V |
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2EDS8265HXUMA1 | INFINEON TECHNOLOGIES |
Category: MOSFET/IGBT drivers Description: IC: driver; MOSFET half-bridge; high-side,MOSFET gate driver Kind of package: reel; tape Supply voltage: 3...3.5V; 4.5...20V Output current: -8...4A Type of integrated circuit: driver Number of channels: 2 Integrated circuit features: galvanically isolated Technology: EiceDRIVER™ Kind of integrated circuit: high-side; MOSFET gate driver Topology: MOSFET half-bridge Voltage class: 650V Mounting: SMD Case: PG-DSO-16 |
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IFX007TAUMA1 | INFINEON TECHNOLOGIES |
Category: Motor and PWM drivers Description: IC: driver; MOSFET half-bridge; IMC,motor controller; PG-TO263-7 Type of integrated circuit: driver Topology: MOSFET half-bridge Kind of integrated circuit: IMC; motor controller Technology: NovalithIC™ Case: PG-TO263-7 Number of channels: 1 Mounting: SMD On-state resistance: 10mΩ Operating temperature: -40...150°C Operating voltage: 5.5...40V Kind of package: reel; tape |
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IRLR7833TRPBF | INFINEON TECHNOLOGIES |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 30V; 140A; 140W; DPAK Mounting: SMD Kind of package: reel Features of semiconductor devices: logic level Technology: HEXFET® Kind of channel: enhanced Case: DPAK Drain-source voltage: 30V Drain current: 140A Type of transistor: N-MOSFET Power dissipation: 140W Polarisation: unipolar |
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BTS462T | INFINEON TECHNOLOGIES |
Category: Power switches - integrated circuits Description: IC: power switch; high-side; 2.3A; Ch: 1; N-Channel; SMD; TO252-5 Type of integrated circuit: power switch Kind of integrated circuit: high-side Output current: 2.3A Number of channels: 1 Kind of output: N-Channel Mounting: SMD Case: TO252-5 Supply voltage: 5...34V DC Technology: Classic PROFET Output voltage: 43V |
auf Bestellung 2736 Stücke: Lieferzeit 14-21 Tag (e) |
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IPA65R045C7XKSA1 | INFINEON TECHNOLOGIES |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 650V; 18A; 35W; TO220FP Technology: CoolMOS™ Case: TO220FP Mounting: THT On-state resistance: 45mΩ Kind of package: tube Power dissipation: 35W Kind of channel: enhanced Drain-source voltage: 650V Type of transistor: N-MOSFET Gate-source voltage: ±20V Polarisation: unipolar Drain current: 18A |
auf Bestellung 2 Stücke: Lieferzeit 14-21 Tag (e) |
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IPA65R095C7XKSA1 | INFINEON TECHNOLOGIES |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 650V; 12A; 34W; TO220FP Type of transistor: N-MOSFET Technology: CoolMOS™ Polarisation: unipolar Drain-source voltage: 650V Drain current: 12A Power dissipation: 34W Case: TO220FP Gate-source voltage: ±20V On-state resistance: 95mΩ Mounting: THT Kind of package: tube Kind of channel: enhanced |
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IPA65R099C6XKSA1 | INFINEON TECHNOLOGIES |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 650V; 38A; 35W; TO220FP Mounting: THT Kind of package: tube Case: TO220FP Polarisation: unipolar Kind of channel: enhanced Technology: CoolMOS™ Power dissipation: 35W Gate-source voltage: ±20V Drain-source voltage: 650V Type of transistor: N-MOSFET Drain current: 38A On-state resistance: 99mΩ |
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IPA65R110CFDXKSA1 | INFINEON TECHNOLOGIES |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 650V; 31.2A; 34.7W; TO220FP Type of transistor: N-MOSFET Technology: CoolMOS™ Polarisation: unipolar Drain-source voltage: 650V Drain current: 31.2A Power dissipation: 34.7W Case: TO220FP Gate-source voltage: ±20V On-state resistance: 0.11Ω Mounting: THT Kind of package: tube Kind of channel: enhanced |
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IPA65R125C7XKSA1 | INFINEON TECHNOLOGIES |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 650V; 1A; 32W; TO220FP Type of transistor: N-MOSFET Technology: CoolMOS™ Polarisation: unipolar Drain-source voltage: 650V Drain current: 1A Power dissipation: 32W Case: TO220FP Gate-source voltage: ±20V On-state resistance: 0.125Ω Mounting: THT Kind of package: tube Kind of channel: enhanced |
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IPA65R190C7XKSA1 | INFINEON TECHNOLOGIES |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 650V; 8A; 30W; TO220FP Type of transistor: N-MOSFET Technology: CoolMOS™ Polarisation: unipolar Drain-source voltage: 650V Drain current: 8A Power dissipation: 30W Case: TO220FP Gate-source voltage: ±20V On-state resistance: 0.19Ω Mounting: THT Kind of package: tube Kind of channel: enhanced |
auf Bestellung 9 Stücke: Lieferzeit 14-21 Tag (e) |
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IPA65R190CFDXKSA1 | INFINEON TECHNOLOGIES |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 650V; 17.5A; 34W; TO220FP Type of transistor: N-MOSFET Technology: CoolMOS™ Polarisation: unipolar Drain-source voltage: 650V Drain current: 17.5A Power dissipation: 34W Case: TO220FP Gate-source voltage: ±20V On-state resistance: 0.19Ω Mounting: THT Kind of package: tube Kind of channel: enhanced |
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IPA65R190E6XKSA1 | INFINEON TECHNOLOGIES |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 650V; 20.2A; 34W; TO220FP Type of transistor: N-MOSFET Technology: CoolMOS™ Polarisation: unipolar Drain-source voltage: 650V Drain current: 20.2A Power dissipation: 34W Case: TO220FP Gate-source voltage: ±20V On-state resistance: 0.19Ω Mounting: THT Kind of package: tube Kind of channel: enhanced |
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IPA65R225C7XKSA1 | INFINEON TECHNOLOGIES |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 650V; 7A; 29W; TO220FP Kind of package: tube Case: TO220FP Drain-source voltage: 650V Drain current: 7A On-state resistance: 0.225Ω Type of transistor: N-MOSFET Power dissipation: 29W Polarisation: unipolar Technology: CoolMOS™ Kind of channel: enhanced Gate-source voltage: ±20V Mounting: THT |
auf Bestellung 45 Stücke: Lieferzeit 14-21 Tag (e) |
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IPA65R280E6XKSA1 | INFINEON TECHNOLOGIES |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 650V; 13.8A; 32W; TO220FP Type of transistor: N-MOSFET Technology: CoolMOS™ Polarisation: unipolar Drain-source voltage: 650V Drain current: 13.8A Power dissipation: 32W Case: TO220FP Gate-source voltage: ±20V On-state resistance: 0.28Ω Mounting: THT Kind of package: tube Kind of channel: enhanced |
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IPA65R310CFDXKSA1 | INFINEON TECHNOLOGIES |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 650V; 11.4A; 32W; TO220FP Drain-source voltage: 650V Drain current: 11.4A On-state resistance: 0.31Ω Type of transistor: N-MOSFET Power dissipation: 32W Polarisation: unipolar Case: TO220FP Mounting: THT Kind of package: tube Technology: CoolMOS™ Kind of channel: enhanced Gate-source voltage: ±20V |
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IPA65R600C6XKSA1 | INFINEON TECHNOLOGIES |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 650V; 7.3A; 28W; TO220FP Technology: CoolMOS™ Case: TO220FP Mounting: THT On-state resistance: 0.6Ω Kind of package: tube Power dissipation: 28W Kind of channel: enhanced Drain-source voltage: 650V Type of transistor: N-MOSFET Gate-source voltage: ±20V Polarisation: unipolar Drain current: 7.3A |
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IPA65R660CFDXKSA1 | INFINEON TECHNOLOGIES |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 650V; 6A; 27.8W; TO220FP Technology: CoolMOS™ Case: TO220FP Mounting: THT On-state resistance: 0.66Ω Kind of package: tube Power dissipation: 27.8W Kind of channel: enhanced Drain-source voltage: 650V Type of transistor: N-MOSFET Gate-source voltage: ±20V Polarisation: unipolar Drain current: 6A |
Produkt ist nicht verfügbar |
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IPB65R045C7ATMA1 | INFINEON TECHNOLOGIES |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 650V; 46A; 227W; PG-TO263-3 Technology: CoolMOS™ Case: PG-TO263-3 Mounting: SMD On-state resistance: 45mΩ Power dissipation: 227W Kind of channel: enhanced Drain-source voltage: 650V Type of transistor: N-MOSFET Gate-source voltage: ±20V Polarisation: unipolar Drain current: 46A |
Produkt ist nicht verfügbar |
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IPB65R065C7ATMA1 | INFINEON TECHNOLOGIES |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 650V; 33A; 171W; PG-TO263-3 Type of transistor: N-MOSFET Technology: CoolMOS™ Polarisation: unipolar Drain-source voltage: 650V Drain current: 33A Power dissipation: 171W Case: PG-TO263-3 Gate-source voltage: ±20V On-state resistance: 65mΩ Mounting: SMD Kind of channel: enhanced |
Produkt ist nicht verfügbar |
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| IRF100P218XKMA1 | INFINEON TECHNOLOGIES |
Category: THT N channel transistors Description: Transistor: N-MOSFET; StrongIRFET™; unipolar; 100V; 341A; Idm: 836A Type of transistor: N-MOSFET Technology: StrongIRFET™ Polarisation: unipolar Drain-source voltage: 100V Drain current: 341A Pulsed drain current: 836A Power dissipation: 556W Case: PG-TO247-3 Gate-source voltage: ±20V On-state resistance: 1.28mΩ Mounting: THT Kind of package: tube Kind of channel: enhanced |
Produkt ist nicht verfügbar |
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IRF1104PBF | INFINEON TECHNOLOGIES |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 40V; 100A; 170W; TO220AB Mounting: THT Case: TO220AB Drain-source voltage: 40V Drain current: 100A On-state resistance: 9mΩ Type of transistor: N-MOSFET Power dissipation: 170W Polarisation: unipolar Kind of package: tube Gate charge: 62nC Technology: HEXFET® Kind of channel: enhanced Gate-source voltage: ±20V |
auf Bestellung 23 Stücke: Lieferzeit 14-21 Tag (e) |
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ISP752R | INFINEON TECHNOLOGIES |
Category: Power switches - integrated circuits Description: IC: power switch; high-side; 1.3A; Ch: 1; N-Channel; SMD; SO8 Technology: Industrial PROFET Case: SO8 On-state resistance: 0.15Ω Mounting: SMD Output current: 1.3A Type of integrated circuit: power switch Kind of output: N-Channel Kind of integrated circuit: high-side Number of channels: 1 Supply voltage: 6...52V DC |
auf Bestellung 2865 Stücke: Lieferzeit 14-21 Tag (e) |
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FP75R12KT4 | INFINEON TECHNOLOGIES |
Category: IGBT modules Description: Module: IGBT; diode/transistor; buck chopper; Urmax: 1.2kV; Ic: 75A Application: frequency changer; Inverter Case: AG-ECONO3-3 Electrical mounting: Press-in PCB Mechanical mounting: screw Pulsed collector current: 150A Collector current: 75A Gate-emitter voltage: ±20V Semiconductor structure: diode/transistor Technology: EconoPIM™ 3 Topology: buck chopper; IGBT three-phase bridge; NTC thermistor; three-phase diode bridge Max. off-state voltage: 1.2kV Type of module: IGBT Power dissipation: 385W |
auf Bestellung 9 Stücke: Lieferzeit 14-21 Tag (e) |
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IRFB4229PBF | INFINEON TECHNOLOGIES |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 250V; 46A; 330W; TO220AB Type of transistor: N-MOSFET Technology: HEXFET® Polarisation: unipolar Drain-source voltage: 250V Drain current: 46A Power dissipation: 330W Case: TO220AB Gate-source voltage: ±30V On-state resistance: 46mΩ Mounting: THT Gate charge: 72nC Kind of package: tube Kind of channel: enhanced |
Produkt ist nicht verfügbar |
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FF300R12KS4 | INFINEON TECHNOLOGIES |
Category: IGBT modules Description: Module: IGBT; transistor/transistor; IGBT half-bridge; Ic: 300A Type of module: IGBT Semiconductor structure: transistor/transistor Topology: IGBT half-bridge Max. off-state voltage: 1.2kV Collector current: 300A Case: AG-62MM-1 Electrical mounting: screw Gate-emitter voltage: ±20V Pulsed collector current: 600A Power dissipation: 1.95kW Mechanical mounting: screw |
Produkt ist nicht verfügbar |
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BAT1504WH6327XTSA1 | INFINEON TECHNOLOGIES |
Category: SMD Schottky diodes Description: Diode: Schottky rectifying; SMD; 4V; 0.11A; SOT323; 100mW Type of diode: Schottky rectifying Mounting: SMD Max. off-state voltage: 4V Load current: 0.11A Semiconductor structure: double series Case: SOT323 Power dissipation: 0.1W |
auf Bestellung 1509 Stücke: Lieferzeit 14-21 Tag (e) |
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IPB123N10N3GATMA1 | INFINEON TECHNOLOGIES |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 100V; 58A; 94W; PG-TO263-3 Type of transistor: N-MOSFET Technology: OptiMOS™ 3 Polarisation: unipolar Drain-source voltage: 100V Drain current: 58A Power dissipation: 94W Case: PG-TO263-3 Gate-source voltage: ±20V On-state resistance: 12.3mΩ Mounting: SMD Kind of channel: enhanced |
Produkt ist nicht verfügbar |
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IPP023N10N5AKSA1 | INFINEON TECHNOLOGIES |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 100V; 120A; 375W; PG-TO220-3 Type of transistor: N-MOSFET Technology: OptiMOS™ 5 Polarisation: unipolar Drain-source voltage: 100V Drain current: 120A Power dissipation: 375W Case: PG-TO220-3 Gate-source voltage: ±20V On-state resistance: 2.3mΩ Mounting: THT Kind of package: tube Kind of channel: enhanced |
Produkt ist nicht verfügbar |
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BTS711L1 | INFINEON TECHNOLOGIES |
Category: Power switches - integrated circuits Description: IC: power switch; high-side; 1.9÷4.4A; Ch: 4; N-Channel; SMD; DSO20 Type of integrated circuit: power switch Kind of integrated circuit: high-side Output current: 1.9...4.4A Number of channels: 4 Kind of output: N-Channel Mounting: SMD Case: DSO20 On-state resistance: 50mΩ Supply voltage: 5...34V DC Technology: Classic PROFET |
auf Bestellung 49 Stücke: Lieferzeit 14-21 Tag (e) |
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IRFH8201TRPBF | INFINEON TECHNOLOGIES |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 25V; 324A; 156W; PQFN5X6 Mounting: SMD Case: PQFN5X6 Kind of package: reel Power dissipation: 156W Drain current: 324A Type of transistor: N-MOSFET Polarisation: unipolar Technology: HEXFET® Kind of channel: enhanced Drain-source voltage: 25V |
Produkt ist nicht verfügbar |
| IPA60R165CPXKSA1 |
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Hersteller: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 21A; 34W; TO220FP
Type of transistor: N-MOSFET
Technology: CoolMOS™ CP
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 21A
Power dissipation: 34W
Case: TO220FP
Gate-source voltage: ±20V
On-state resistance: 0.165Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhanced
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 21A; 34W; TO220FP
Type of transistor: N-MOSFET
Technology: CoolMOS™ CP
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 21A
Power dissipation: 34W
Case: TO220FP
Gate-source voltage: ±20V
On-state resistance: 0.165Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhanced
Produkt ist nicht verfügbar
| IPA60R170CFD7XKSA1 |
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Hersteller: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; CoolMOS™ CFD7; unipolar; 650V; 5A; Idm: 51A
Type of transistor: N-MOSFET
Technology: CoolMOS™ CFD7
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 5A
Pulsed drain current: 51A
Power dissipation: 26W
Case: TO220FP
Gate-source voltage: ±20V
On-state resistance: 0.17Ω
Mounting: THT
Gate charge: 28nC
Kind of package: tube
Kind of channel: enhanced
Category: THT N channel transistors
Description: Transistor: N-MOSFET; CoolMOS™ CFD7; unipolar; 650V; 5A; Idm: 51A
Type of transistor: N-MOSFET
Technology: CoolMOS™ CFD7
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 5A
Pulsed drain current: 51A
Power dissipation: 26W
Case: TO220FP
Gate-source voltage: ±20V
On-state resistance: 0.17Ω
Mounting: THT
Gate charge: 28nC
Kind of package: tube
Kind of channel: enhanced
auf Bestellung 1 Stücke:
Lieferzeit 14-21 Tag (e)| Anzahl | Preis ohne MwSt |
|---|---|
| 1+ | 71.5 EUR |
| IPA60R180P7SXKSA1 |
|
Hersteller: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 11A; Idm: 53A; 20W; TO220FP
Type of transistor: N-MOSFET
Technology: CoolMOS™ P7
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 11A
Pulsed drain current: 53A
Power dissipation: 20W
Case: TO220FP
Gate-source voltage: ±20V
On-state resistance: 0.18Ω
Mounting: THT
Gate charge: 25nC
Kind of package: tube
Kind of channel: enhanced
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 11A; Idm: 53A; 20W; TO220FP
Type of transistor: N-MOSFET
Technology: CoolMOS™ P7
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 11A
Pulsed drain current: 53A
Power dissipation: 20W
Case: TO220FP
Gate-source voltage: ±20V
On-state resistance: 0.18Ω
Mounting: THT
Gate charge: 25nC
Kind of package: tube
Kind of channel: enhanced
Produkt ist nicht verfügbar
| IPA60R180P7XKSA1 |
|
Hersteller: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 11A; Idm: 53A; 26W; TO220FP
Type of transistor: N-MOSFET
Technology: CoolMOS™ P7
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 11A
Pulsed drain current: 53A
Power dissipation: 26W
Case: TO220FP
Gate-source voltage: ±20V
On-state resistance: 0.18Ω
Mounting: THT
Gate charge: 25nC
Kind of package: tube
Kind of channel: enhanced
Features of semiconductor devices: ESD protected gate
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 11A; Idm: 53A; 26W; TO220FP
Type of transistor: N-MOSFET
Technology: CoolMOS™ P7
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 11A
Pulsed drain current: 53A
Power dissipation: 26W
Case: TO220FP
Gate-source voltage: ±20V
On-state resistance: 0.18Ω
Mounting: THT
Gate charge: 25nC
Kind of package: tube
Kind of channel: enhanced
Features of semiconductor devices: ESD protected gate
Produkt ist nicht verfügbar
| IPA60R190C6XKSA1 |
|
Hersteller: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 20.2A; 34W; TO220FP
Type of transistor: N-MOSFET
Technology: CoolMOS™ C6
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 20.2A
Power dissipation: 34W
Case: TO220FP
Gate-source voltage: ±20V
On-state resistance: 0.19Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhanced
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 20.2A; 34W; TO220FP
Type of transistor: N-MOSFET
Technology: CoolMOS™ C6
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 20.2A
Power dissipation: 34W
Case: TO220FP
Gate-source voltage: ±20V
On-state resistance: 0.19Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhanced
Produkt ist nicht verfügbar
| IPA60R190E6XKSA1 |
|
Hersteller: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 20.2A; 34W; TO220FP
Type of transistor: N-MOSFET
Technology: CoolMOS™ E6
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 20.2A
Power dissipation: 34W
Case: TO220FP
Gate-source voltage: ±20V
On-state resistance: 0.19Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhanced
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 20.2A; 34W; TO220FP
Type of transistor: N-MOSFET
Technology: CoolMOS™ E6
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 20.2A
Power dissipation: 34W
Case: TO220FP
Gate-source voltage: ±20V
On-state resistance: 0.19Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhanced
Produkt ist nicht verfügbar
| IPA60R190P6XKSA1 |
|
Hersteller: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 20.2A; 34W; TO220FP
Type of transistor: N-MOSFET
Technology: CoolMOS™ P6
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 20.2A
Power dissipation: 34W
Case: TO220FP
Gate-source voltage: ±20V
On-state resistance: 0.19Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhanced
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 20.2A; 34W; TO220FP
Type of transistor: N-MOSFET
Technology: CoolMOS™ P6
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 20.2A
Power dissipation: 34W
Case: TO220FP
Gate-source voltage: ±20V
On-state resistance: 0.19Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhanced
auf Bestellung 2 Stücke:
Lieferzeit 14-21 Tag (e)| Anzahl | Preis ohne MwSt |
|---|---|
| 2+ | 35.75 EUR |
| IPA60R199CPXKSA1 |
|
Hersteller: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 16A; 34W; TO220FP
Type of transistor: N-MOSFET
Technology: CoolMOS™ CP
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 16A
Power dissipation: 34W
Case: TO220FP
Gate-source voltage: ±20V
On-state resistance: 0.199Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhanced
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 16A; 34W; TO220FP
Type of transistor: N-MOSFET
Technology: CoolMOS™ CP
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 16A
Power dissipation: 34W
Case: TO220FP
Gate-source voltage: ±20V
On-state resistance: 0.199Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhanced
Produkt ist nicht verfügbar
| IPA60R230P6XKSA1 |
|
Hersteller: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 16.8A; 33W; TO220FP
Type of transistor: N-MOSFET
Technology: CoolMOS™ P6
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 16.8A
Power dissipation: 33W
Case: TO220FP
Gate-source voltage: ±20V
On-state resistance: 0.23Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhanced
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 16.8A; 33W; TO220FP
Type of transistor: N-MOSFET
Technology: CoolMOS™ P6
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 16.8A
Power dissipation: 33W
Case: TO220FP
Gate-source voltage: ±20V
On-state resistance: 0.23Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhanced
auf Bestellung 340 Stücke:
Lieferzeit 14-21 Tag (e)| Anzahl | Preis ohne MwSt |
|---|---|
| 22+ | 3.39 EUR |
| 24+ | 3.05 EUR |
| 36+ | 2 EUR |
| 38+ | 1.9 EUR |
| IR2213SPBF |
|
Hersteller: INFINEON TECHNOLOGIES
Category: MOSFET/IGBT drivers
Description: IC: driver; MOSFET half-bridge; high-/low-side,gate driver; SO16
Type of integrated circuit: driver
Topology: MOSFET half-bridge
Kind of integrated circuit: gate driver; high-/low-side
Case: SO16
Output current: -2...1.7A
Power: 1.25W
Number of channels: 2
Supply voltage: 12...20V DC
Mounting: SMD
Operating temperature: -40...125°C
Kind of package: tube
Voltage class: 600V
Turn-on time: 280ns
Turn-off time: 225ns
Category: MOSFET/IGBT drivers
Description: IC: driver; MOSFET half-bridge; high-/low-side,gate driver; SO16
Type of integrated circuit: driver
Topology: MOSFET half-bridge
Kind of integrated circuit: gate driver; high-/low-side
Case: SO16
Output current: -2...1.7A
Power: 1.25W
Number of channels: 2
Supply voltage: 12...20V DC
Mounting: SMD
Operating temperature: -40...125°C
Kind of package: tube
Voltage class: 600V
Turn-on time: 280ns
Turn-off time: 225ns
Produkt ist nicht verfügbar
| IPB60R190C6ATMA1 |
|
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 20.2A; 151W; PG-TO263-3
Type of transistor: N-MOSFET
Technology: CoolMOS™ C6
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 20.2A
Power dissipation: 151W
Case: PG-TO263-3
Gate-source voltage: ±20V
On-state resistance: 0.19Ω
Mounting: SMD
Kind of channel: enhanced
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 20.2A; 151W; PG-TO263-3
Type of transistor: N-MOSFET
Technology: CoolMOS™ C6
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 20.2A
Power dissipation: 151W
Case: PG-TO263-3
Gate-source voltage: ±20V
On-state resistance: 0.19Ω
Mounting: SMD
Kind of channel: enhanced
Produkt ist nicht verfügbar
| IPI60R190C6XKSA1 |
|
Hersteller: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 20.2A; 151W; PG-TO262-3
Type of transistor: N-MOSFET
Technology: CoolMOS™ C6
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 20.2A
Power dissipation: 151W
Case: PG-TO262-3
Gate-source voltage: ±20V
On-state resistance: 0.19Ω
Mounting: THT
Kind of channel: enhanced
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 20.2A; 151W; PG-TO262-3
Type of transistor: N-MOSFET
Technology: CoolMOS™ C6
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 20.2A
Power dissipation: 151W
Case: PG-TO262-3
Gate-source voltage: ±20V
On-state resistance: 0.19Ω
Mounting: THT
Kind of channel: enhanced
auf Bestellung 27 Stücke:
Lieferzeit 14-21 Tag (e)| Anzahl | Preis ohne MwSt |
|---|---|
| 15+ | 4.95 EUR |
| 17+ | 4.25 EUR |
| 25+ | 2.95 EUR |
| 26+ | 2.79 EUR |
| IPP60R190C6XKSA1 |
|
Hersteller: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 20.2A; 151W; PG-TO220-3
Type of transistor: N-MOSFET
Technology: CoolMOS™ C6
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 20.2A
Power dissipation: 151W
Case: PG-TO220-3
Gate-source voltage: ±20V
On-state resistance: 0.19Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhanced
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 20.2A; 151W; PG-TO220-3
Type of transistor: N-MOSFET
Technology: CoolMOS™ C6
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 20.2A
Power dissipation: 151W
Case: PG-TO220-3
Gate-source voltage: ±20V
On-state resistance: 0.19Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhanced
auf Bestellung 4 Stücke:
Lieferzeit 14-21 Tag (e)| Anzahl | Preis ohne MwSt |
|---|---|
| 4+ | 17.88 EUR |
| IPW60R190C6FKSA1 |
|
Hersteller: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 20.2A; 151W; PG-TO247-3
Type of transistor: N-MOSFET
Technology: CoolMOS™ C6
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 20.2A
Power dissipation: 151W
Case: PG-TO247-3
Gate-source voltage: ±20V
On-state resistance: 0.19Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhanced
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 20.2A; 151W; PG-TO247-3
Type of transistor: N-MOSFET
Technology: CoolMOS™ C6
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 20.2A
Power dissipation: 151W
Case: PG-TO247-3
Gate-source voltage: ±20V
On-state resistance: 0.19Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhanced
auf Bestellung 18 Stücke:
Lieferzeit 14-21 Tag (e)| Anzahl | Preis ohne MwSt |
|---|---|
| 12+ | 6.13 EUR |
| 14+ | 5.42 EUR |
| 17+ | 4.22 EUR |
| PVDZ172NPBF | |
|
Hersteller: INFINEON TECHNOLOGIES
Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NO; Icntrl: 5÷25mA; 1.5A; 0÷60VDC; 250mΩ
Type of relay: solid state
Contacts configuration: SPST-NO
Control current: 5...25mA
Max. operating current: 1.5A
Switched voltage: 0...60V DC
Relay variant: MOSFET
On-state resistance: 0.25Ω
Mounting: THT
Case: DIP8
Operating temperature: -40...85°C
Operate time: 2ms
Release time: 0.5ms
Relay series: PVDZ172NPbF
Category: One Phase Solid State Relays
Description: Relay: solid state; SPST-NO; Icntrl: 5÷25mA; 1.5A; 0÷60VDC; 250mΩ
Type of relay: solid state
Contacts configuration: SPST-NO
Control current: 5...25mA
Max. operating current: 1.5A
Switched voltage: 0...60V DC
Relay variant: MOSFET
On-state resistance: 0.25Ω
Mounting: THT
Case: DIP8
Operating temperature: -40...85°C
Operate time: 2ms
Release time: 0.5ms
Relay series: PVDZ172NPbF
auf Bestellung 35 Stücke:
Lieferzeit 14-21 Tag (e)| Anzahl | Preis ohne MwSt |
|---|---|
| 5+ | 17.12 EUR |
| 9+ | 8.27 EUR |
| 10+ | 7.81 EUR |
| IMW65R048M1HXKSA1 |
|
Hersteller: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; SiC; unipolar; 650V; 24A; Idm: 100A; 125W
Case: TO247
Mounting: THT
On-state resistance: 63mΩ
Kind of package: tube
Technology: CoolSiC™; SiC
Pulsed drain current: 100A
Power dissipation: 125W
Polarisation: unipolar
Drain current: 24A
Kind of channel: enhanced
Drain-source voltage: 650V
Type of transistor: N-MOSFET
Gate-source voltage: -5...23V
Category: THT N channel transistors
Description: Transistor: N-MOSFET; SiC; unipolar; 650V; 24A; Idm: 100A; 125W
Case: TO247
Mounting: THT
On-state resistance: 63mΩ
Kind of package: tube
Technology: CoolSiC™; SiC
Pulsed drain current: 100A
Power dissipation: 125W
Polarisation: unipolar
Drain current: 24A
Kind of channel: enhanced
Drain-source voltage: 650V
Type of transistor: N-MOSFET
Gate-source voltage: -5...23V
Produkt ist nicht verfügbar
| IMW120R045M1XKSA1 |
|
Hersteller: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; SiC; unipolar; 1.2kV; 36A; Idm: 130A; 114W
Kind of package: tube
Mounting: THT
Drain current: 36A
On-state resistance: 59mΩ
Type of transistor: N-MOSFET
Power dissipation: 114W
Polarisation: unipolar
Technology: CoolSiC™; SiC
Kind of channel: enhanced
Gate-source voltage: -10...20V
Pulsed drain current: 130A
Case: TO247
Drain-source voltage: 1.2kV
Category: THT N channel transistors
Description: Transistor: N-MOSFET; SiC; unipolar; 1.2kV; 36A; Idm: 130A; 114W
Kind of package: tube
Mounting: THT
Drain current: 36A
On-state resistance: 59mΩ
Type of transistor: N-MOSFET
Power dissipation: 114W
Polarisation: unipolar
Technology: CoolSiC™; SiC
Kind of channel: enhanced
Gate-source voltage: -10...20V
Pulsed drain current: 130A
Case: TO247
Drain-source voltage: 1.2kV
Produkt ist nicht verfügbar
| AIMW120R045M1XKSA1 |
|
Hersteller: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; SiC; unipolar; 1.2kV; 36A; Idm: 130A; 114W
Mounting: THT
Kind of package: tube
Type of transistor: N-MOSFET
On-state resistance: 75mΩ
Drain current: 36A
Drain-source voltage: 1.2kV
Power dissipation: 114W
Technology: CoolSiC™; SiC
Case: TO247
Kind of channel: enhanced
Gate-source voltage: -7...20V
Pulsed drain current: 130A
Polarisation: unipolar
Category: THT N channel transistors
Description: Transistor: N-MOSFET; SiC; unipolar; 1.2kV; 36A; Idm: 130A; 114W
Mounting: THT
Kind of package: tube
Type of transistor: N-MOSFET
On-state resistance: 75mΩ
Drain current: 36A
Drain-source voltage: 1.2kV
Power dissipation: 114W
Technology: CoolSiC™; SiC
Case: TO247
Kind of channel: enhanced
Gate-source voltage: -7...20V
Pulsed drain current: 130A
Polarisation: unipolar
Produkt ist nicht verfügbar
| FS10R12VT3BOMA1 |
|
Hersteller: INFINEON TECHNOLOGIES
Category: IGBT modules
Description: Module: IGBT; transistor/transistor; IGBT three-phase bridge
Electrical mounting: Press-in PCB
Type of module: IGBT
Technology: EasyPACK™
Topology: IGBT three-phase bridge
Case: AG-EASY750-1
Max. off-state voltage: 1.2kV
Semiconductor structure: transistor/transistor
Gate-emitter voltage: ±20V
Collector current: 10A
Pulsed collector current: 20A
Power dissipation: 64W
Category: IGBT modules
Description: Module: IGBT; transistor/transistor; IGBT three-phase bridge
Electrical mounting: Press-in PCB
Type of module: IGBT
Technology: EasyPACK™
Topology: IGBT three-phase bridge
Case: AG-EASY750-1
Max. off-state voltage: 1.2kV
Semiconductor structure: transistor/transistor
Gate-emitter voltage: ±20V
Collector current: 10A
Pulsed collector current: 20A
Power dissipation: 64W
Produkt ist nicht verfügbar
| IPP50R380CEXKSA1 |
|
Hersteller: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 9.9A; 73W; PG-TO220-3
Type of transistor: N-MOSFET
Technology: CoolMOS™
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 9.9A
Power dissipation: 73W
Case: PG-TO220-3
Gate-source voltage: ±20V
On-state resistance: 0.38Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhanced
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 9.9A; 73W; PG-TO220-3
Type of transistor: N-MOSFET
Technology: CoolMOS™
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 9.9A
Power dissipation: 73W
Case: PG-TO220-3
Gate-source voltage: ±20V
On-state resistance: 0.38Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhanced
Produkt ist nicht verfügbar
| TT142N14KOF |
|
Hersteller: INFINEON TECHNOLOGIES
Category: Thyristor modules
Description: Module: thyristor; double series; 1.4kV; 142A; BG-PB34-1; screw
Type of module: thyristor
Semiconductor structure: double series
Max. off-state voltage: 1.4kV
Load current: 142A
Case: BG-PB34-1
Max. forward voltage: 1.56V
Max. forward impulse current: 4.8kA
Gate current: 150mA
Electrical mounting: FASTON connectors; screw
Mechanical mounting: screw
Category: Thyristor modules
Description: Module: thyristor; double series; 1.4kV; 142A; BG-PB34-1; screw
Type of module: thyristor
Semiconductor structure: double series
Max. off-state voltage: 1.4kV
Load current: 142A
Case: BG-PB34-1
Max. forward voltage: 1.56V
Max. forward impulse current: 4.8kA
Gate current: 150mA
Electrical mounting: FASTON connectors; screw
Mechanical mounting: screw
Produkt ist nicht verfügbar
| IRS21867SPBF |
|
Hersteller: INFINEON TECHNOLOGIES
Category: MOSFET/IGBT drivers
Description: IC: driver; MOSFET half-bridge; high-/low-side,gate driver; SO8
Type of integrated circuit: driver
Topology: MOSFET half-bridge
Kind of integrated circuit: gate driver; high-/low-side
Case: SO8
Output current: -4...4A
Power: 625mW
Number of channels: 2
Supply voltage: 10...20V DC
Mounting: SMD
Operating temperature: -40...125°C
Kind of package: tube
Voltage class: 600V
Turn-on time: 192ns
Turn-off time: 188ns
Category: MOSFET/IGBT drivers
Description: IC: driver; MOSFET half-bridge; high-/low-side,gate driver; SO8
Type of integrated circuit: driver
Topology: MOSFET half-bridge
Kind of integrated circuit: gate driver; high-/low-side
Case: SO8
Output current: -4...4A
Power: 625mW
Number of channels: 2
Supply voltage: 10...20V DC
Mounting: SMD
Operating temperature: -40...125°C
Kind of package: tube
Voltage class: 600V
Turn-on time: 192ns
Turn-off time: 188ns
auf Bestellung 1 Stücke:
Lieferzeit 14-21 Tag (e)| Anzahl | Preis ohne MwSt |
|---|---|
| 1+ | 71.5 EUR |
| IRS21867STRPBF |
|
Hersteller: INFINEON TECHNOLOGIES
Category: MOSFET/IGBT drivers
Description: IC: driver; MOSFET half-bridge; high-/low-side,gate driver; SO8
Type of integrated circuit: driver
Topology: MOSFET half-bridge
Kind of integrated circuit: gate driver; high-/low-side
Case: SO8
Output current: -4...4A
Power: 625mW
Number of channels: 2
Supply voltage: 10...20V DC
Mounting: SMD
Operating temperature: -40...125°C
Kind of package: reel; tape
Voltage class: 600V
Turn-on time: 192ns
Turn-off time: 188ns
Category: MOSFET/IGBT drivers
Description: IC: driver; MOSFET half-bridge; high-/low-side,gate driver; SO8
Type of integrated circuit: driver
Topology: MOSFET half-bridge
Kind of integrated circuit: gate driver; high-/low-side
Case: SO8
Output current: -4...4A
Power: 625mW
Number of channels: 2
Supply voltage: 10...20V DC
Mounting: SMD
Operating temperature: -40...125°C
Kind of package: reel; tape
Voltage class: 600V
Turn-on time: 192ns
Turn-off time: 188ns
auf Bestellung 2316 Stücke:
Lieferzeit 14-21 Tag (e)| Anzahl | Preis ohne MwSt |
|---|---|
| 25+ | 2.97 EUR |
| 28+ | 2.65 EUR |
| 32+ | 2.29 EUR |
| 34+ | 2.16 EUR |
| 500+ | 2.07 EUR |
| IRFB5615PBF |
|
Hersteller: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 150V; 35A; 144W; TO220AB
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 150V
Drain current: 35A
Power dissipation: 144W
Case: TO220AB
Gate-source voltage: ±20V
On-state resistance: 39mΩ
Mounting: THT
Gate charge: 26nC
Kind of package: tube
Kind of channel: enhanced
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 150V; 35A; 144W; TO220AB
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 150V
Drain current: 35A
Power dissipation: 144W
Case: TO220AB
Gate-source voltage: ±20V
On-state resistance: 39mΩ
Mounting: THT
Gate charge: 26nC
Kind of package: tube
Kind of channel: enhanced
auf Bestellung 133 Stücke:
Lieferzeit 14-21 Tag (e)| Anzahl | Preis ohne MwSt |
|---|---|
| 44+ | 1.63 EUR |
| 50+ | 1.46 EUR |
| 56+ | 1.29 EUR |
| 65+ | 1.12 EUR |
| 68+ | 1.06 EUR |
| 2EDF7175FXUMA1 |
|
Hersteller: INFINEON TECHNOLOGIES
Category: MOSFET/IGBT drivers
Description: IC: driver; MOSFET half-bridge; high-side,MOSFET gate driver
Kind of package: reel; tape
Output current: -2...1A
Type of integrated circuit: driver
Number of channels: 2
Integrated circuit features: galvanically isolated
Technology: EiceDRIVER™
Kind of integrated circuit: high-side; MOSFET gate driver
Topology: MOSFET half-bridge
Voltage class: 650V
Mounting: SMD
Case: PG-DSO-16
Supply voltage: 3...3.5V; 4.5...20V
Category: MOSFET/IGBT drivers
Description: IC: driver; MOSFET half-bridge; high-side,MOSFET gate driver
Kind of package: reel; tape
Output current: -2...1A
Type of integrated circuit: driver
Number of channels: 2
Integrated circuit features: galvanically isolated
Technology: EiceDRIVER™
Kind of integrated circuit: high-side; MOSFET gate driver
Topology: MOSFET half-bridge
Voltage class: 650V
Mounting: SMD
Case: PG-DSO-16
Supply voltage: 3...3.5V; 4.5...20V
Produkt ist nicht verfügbar
| 2EDL05N06PFXUMA1 |
|
Hersteller: INFINEON TECHNOLOGIES
Category: MOSFET/IGBT drivers
Description: IC: driver; MOSFET half-bridge; EiceDRIVER™; PG-DSO-8; -0.7÷0.36A
Integrated circuit features: integrated bootstrap functionality
Kind of package: reel; tape
Mounting: SMD
Technology: EiceDRIVER™
Kind of integrated circuit: high-/low-side; MOSFET gate driver
Topology: MOSFET half-bridge
Case: PG-DSO-8
Voltage class: 600V
Supply voltage: 10...20V
Output current: -0.7...0.36A
Type of integrated circuit: driver
Number of channels: 2
Category: MOSFET/IGBT drivers
Description: IC: driver; MOSFET half-bridge; EiceDRIVER™; PG-DSO-8; -0.7÷0.36A
Integrated circuit features: integrated bootstrap functionality
Kind of package: reel; tape
Mounting: SMD
Technology: EiceDRIVER™
Kind of integrated circuit: high-/low-side; MOSFET gate driver
Topology: MOSFET half-bridge
Case: PG-DSO-8
Voltage class: 600V
Supply voltage: 10...20V
Output current: -0.7...0.36A
Type of integrated circuit: driver
Number of channels: 2
auf Bestellung 1678 Stücke:
Lieferzeit 14-21 Tag (e)| Anzahl | Preis ohne MwSt |
|---|---|
| 37+ | 1.94 EUR |
| 42+ | 1.73 EUR |
| 48+ | 1.5 EUR |
| 51+ | 1.42 EUR |
| 500+ | 1.36 EUR |
| 2EDL05N06PJXUMA1 |
|
Hersteller: INFINEON TECHNOLOGIES
Category: MOSFET/IGBT drivers
Description: IC: driver; MOSFET half-bridge; EiceDRIVER™; PG-DSO-14; Ch: 2
Integrated circuit features: integrated bootstrap functionality
Kind of package: reel; tape
Mounting: SMD
Technology: EiceDRIVER™
Kind of integrated circuit: high-/low-side; MOSFET gate driver
Topology: MOSFET half-bridge
Case: PG-DSO-14
Voltage class: 600V
Supply voltage: 10...20V
Output current: -0.7...0.36A
Type of integrated circuit: driver
Number of channels: 2
Category: MOSFET/IGBT drivers
Description: IC: driver; MOSFET half-bridge; EiceDRIVER™; PG-DSO-14; Ch: 2
Integrated circuit features: integrated bootstrap functionality
Kind of package: reel; tape
Mounting: SMD
Technology: EiceDRIVER™
Kind of integrated circuit: high-/low-side; MOSFET gate driver
Topology: MOSFET half-bridge
Case: PG-DSO-14
Voltage class: 600V
Supply voltage: 10...20V
Output current: -0.7...0.36A
Type of integrated circuit: driver
Number of channels: 2
Produkt ist nicht verfügbar
| 2EDL23N06PJXUMA1 |
|
Hersteller: INFINEON TECHNOLOGIES
Category: MOSFET/IGBT drivers
Description: IC: driver; MOSFET half-bridge; EiceDRIVER™; PG-DSO-14; -2.5÷1.8A
Technology: EiceDRIVER™
Case: PG-DSO-14
Mounting: SMD
Kind of package: reel; tape
Output current: -2.5...1.8A
Topology: MOSFET half-bridge
Integrated circuit features: integrated bootstrap functionality
Type of integrated circuit: driver
Kind of integrated circuit: high-/low-side; MOSFET gate driver
Supply voltage: 10...20V
Number of channels: 2
Voltage class: 600V
Category: MOSFET/IGBT drivers
Description: IC: driver; MOSFET half-bridge; EiceDRIVER™; PG-DSO-14; -2.5÷1.8A
Technology: EiceDRIVER™
Case: PG-DSO-14
Mounting: SMD
Kind of package: reel; tape
Output current: -2.5...1.8A
Topology: MOSFET half-bridge
Integrated circuit features: integrated bootstrap functionality
Type of integrated circuit: driver
Kind of integrated circuit: high-/low-side; MOSFET gate driver
Supply voltage: 10...20V
Number of channels: 2
Voltage class: 600V
Produkt ist nicht verfügbar
| 2EDN7524FXTMA1 |
|
Hersteller: INFINEON TECHNOLOGIES
Category: MOSFET/IGBT drivers
Description: IC: driver; MOSFET half-bridge; low-side,gate driver; PG-DSO-8
Type of integrated circuit: driver
Mounting: SMD
Number of channels: 2
Case: PG-DSO-8
Kind of package: reel; tape
Kind of integrated circuit: gate driver; low-side
Output current: -5...5A
Protection: undervoltage UVP
Technology: EiceDRIVER™
Topology: MOSFET half-bridge
Voltage class: 20V
Supply voltage: 4.5...20V
Category: MOSFET/IGBT drivers
Description: IC: driver; MOSFET half-bridge; low-side,gate driver; PG-DSO-8
Type of integrated circuit: driver
Mounting: SMD
Number of channels: 2
Case: PG-DSO-8
Kind of package: reel; tape
Kind of integrated circuit: gate driver; low-side
Output current: -5...5A
Protection: undervoltage UVP
Technology: EiceDRIVER™
Topology: MOSFET half-bridge
Voltage class: 20V
Supply voltage: 4.5...20V
auf Bestellung 1860 Stücke:
Lieferzeit 14-21 Tag (e)| Anzahl | Preis ohne MwSt |
|---|---|
| 53+ | 1.36 EUR |
| 59+ | 1.22 EUR |
| 69+ | 1.04 EUR |
| 73+ | 0.99 EUR |
| 500+ | 0.94 EUR |
| 2EDS8165HXUMA1 |
|
Hersteller: INFINEON TECHNOLOGIES
Category: MOSFET/IGBT drivers
Description: IC: driver; MOSFET half-bridge; high-side,MOSFET gate driver
Type of integrated circuit: driver
Topology: MOSFET half-bridge
Kind of integrated circuit: high-side; MOSFET gate driver
Technology: EiceDRIVER™
Case: PG-DSO-16
Output current: -2...1A
Number of channels: 2
Supply voltage: 3...3.5V; 4.5...20V
Integrated circuit features: galvanically isolated
Mounting: SMD
Kind of package: reel; tape
Voltage class: 650V
Category: MOSFET/IGBT drivers
Description: IC: driver; MOSFET half-bridge; high-side,MOSFET gate driver
Type of integrated circuit: driver
Topology: MOSFET half-bridge
Kind of integrated circuit: high-side; MOSFET gate driver
Technology: EiceDRIVER™
Case: PG-DSO-16
Output current: -2...1A
Number of channels: 2
Supply voltage: 3...3.5V; 4.5...20V
Integrated circuit features: galvanically isolated
Mounting: SMD
Kind of package: reel; tape
Voltage class: 650V
Produkt ist nicht verfügbar
| 2EDS8265HXUMA1 |
|
Hersteller: INFINEON TECHNOLOGIES
Category: MOSFET/IGBT drivers
Description: IC: driver; MOSFET half-bridge; high-side,MOSFET gate driver
Kind of package: reel; tape
Supply voltage: 3...3.5V; 4.5...20V
Output current: -8...4A
Type of integrated circuit: driver
Number of channels: 2
Integrated circuit features: galvanically isolated
Technology: EiceDRIVER™
Kind of integrated circuit: high-side; MOSFET gate driver
Topology: MOSFET half-bridge
Voltage class: 650V
Mounting: SMD
Case: PG-DSO-16
Category: MOSFET/IGBT drivers
Description: IC: driver; MOSFET half-bridge; high-side,MOSFET gate driver
Kind of package: reel; tape
Supply voltage: 3...3.5V; 4.5...20V
Output current: -8...4A
Type of integrated circuit: driver
Number of channels: 2
Integrated circuit features: galvanically isolated
Technology: EiceDRIVER™
Kind of integrated circuit: high-side; MOSFET gate driver
Topology: MOSFET half-bridge
Voltage class: 650V
Mounting: SMD
Case: PG-DSO-16
Produkt ist nicht verfügbar
| IFX007TAUMA1 |
|
Hersteller: INFINEON TECHNOLOGIES
Category: Motor and PWM drivers
Description: IC: driver; MOSFET half-bridge; IMC,motor controller; PG-TO263-7
Type of integrated circuit: driver
Topology: MOSFET half-bridge
Kind of integrated circuit: IMC; motor controller
Technology: NovalithIC™
Case: PG-TO263-7
Number of channels: 1
Mounting: SMD
On-state resistance: 10mΩ
Operating temperature: -40...150°C
Operating voltage: 5.5...40V
Kind of package: reel; tape
Category: Motor and PWM drivers
Description: IC: driver; MOSFET half-bridge; IMC,motor controller; PG-TO263-7
Type of integrated circuit: driver
Topology: MOSFET half-bridge
Kind of integrated circuit: IMC; motor controller
Technology: NovalithIC™
Case: PG-TO263-7
Number of channels: 1
Mounting: SMD
On-state resistance: 10mΩ
Operating temperature: -40...150°C
Operating voltage: 5.5...40V
Kind of package: reel; tape
Produkt ist nicht verfügbar
| IRLR7833TRPBF |
|
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 140A; 140W; DPAK
Mounting: SMD
Kind of package: reel
Features of semiconductor devices: logic level
Technology: HEXFET®
Kind of channel: enhanced
Case: DPAK
Drain-source voltage: 30V
Drain current: 140A
Type of transistor: N-MOSFET
Power dissipation: 140W
Polarisation: unipolar
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 140A; 140W; DPAK
Mounting: SMD
Kind of package: reel
Features of semiconductor devices: logic level
Technology: HEXFET®
Kind of channel: enhanced
Case: DPAK
Drain-source voltage: 30V
Drain current: 140A
Type of transistor: N-MOSFET
Power dissipation: 140W
Polarisation: unipolar
Produkt ist nicht verfügbar
| BTS462T |
|
Hersteller: INFINEON TECHNOLOGIES
Category: Power switches - integrated circuits
Description: IC: power switch; high-side; 2.3A; Ch: 1; N-Channel; SMD; TO252-5
Type of integrated circuit: power switch
Kind of integrated circuit: high-side
Output current: 2.3A
Number of channels: 1
Kind of output: N-Channel
Mounting: SMD
Case: TO252-5
Supply voltage: 5...34V DC
Technology: Classic PROFET
Output voltage: 43V
Category: Power switches - integrated circuits
Description: IC: power switch; high-side; 2.3A; Ch: 1; N-Channel; SMD; TO252-5
Type of integrated circuit: power switch
Kind of integrated circuit: high-side
Output current: 2.3A
Number of channels: 1
Kind of output: N-Channel
Mounting: SMD
Case: TO252-5
Supply voltage: 5...34V DC
Technology: Classic PROFET
Output voltage: 43V
auf Bestellung 2736 Stücke:
Lieferzeit 14-21 Tag (e)| Anzahl | Preis ohne MwSt |
|---|---|
| 23+ | 3.12 EUR |
| 26+ | 2.8 EUR |
| 33+ | 2.17 EUR |
| 35+ | 2.06 EUR |
| 2500+ | 2 EUR |
| IPA65R045C7XKSA1 |
|
Hersteller: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 18A; 35W; TO220FP
Technology: CoolMOS™
Case: TO220FP
Mounting: THT
On-state resistance: 45mΩ
Kind of package: tube
Power dissipation: 35W
Kind of channel: enhanced
Drain-source voltage: 650V
Type of transistor: N-MOSFET
Gate-source voltage: ±20V
Polarisation: unipolar
Drain current: 18A
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 18A; 35W; TO220FP
Technology: CoolMOS™
Case: TO220FP
Mounting: THT
On-state resistance: 45mΩ
Kind of package: tube
Power dissipation: 35W
Kind of channel: enhanced
Drain-source voltage: 650V
Type of transistor: N-MOSFET
Gate-source voltage: ±20V
Polarisation: unipolar
Drain current: 18A
auf Bestellung 2 Stücke:
Lieferzeit 14-21 Tag (e)| Anzahl | Preis ohne MwSt |
|---|---|
| 2+ | 35.75 EUR |
| IPA65R095C7XKSA1 |
|
Hersteller: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 12A; 34W; TO220FP
Type of transistor: N-MOSFET
Technology: CoolMOS™
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 12A
Power dissipation: 34W
Case: TO220FP
Gate-source voltage: ±20V
On-state resistance: 95mΩ
Mounting: THT
Kind of package: tube
Kind of channel: enhanced
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 12A; 34W; TO220FP
Type of transistor: N-MOSFET
Technology: CoolMOS™
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 12A
Power dissipation: 34W
Case: TO220FP
Gate-source voltage: ±20V
On-state resistance: 95mΩ
Mounting: THT
Kind of package: tube
Kind of channel: enhanced
Produkt ist nicht verfügbar
| IPA65R099C6XKSA1 |
|
Hersteller: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 38A; 35W; TO220FP
Mounting: THT
Kind of package: tube
Case: TO220FP
Polarisation: unipolar
Kind of channel: enhanced
Technology: CoolMOS™
Power dissipation: 35W
Gate-source voltage: ±20V
Drain-source voltage: 650V
Type of transistor: N-MOSFET
Drain current: 38A
On-state resistance: 99mΩ
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 38A; 35W; TO220FP
Mounting: THT
Kind of package: tube
Case: TO220FP
Polarisation: unipolar
Kind of channel: enhanced
Technology: CoolMOS™
Power dissipation: 35W
Gate-source voltage: ±20V
Drain-source voltage: 650V
Type of transistor: N-MOSFET
Drain current: 38A
On-state resistance: 99mΩ
Produkt ist nicht verfügbar
| IPA65R110CFDXKSA1 |
|
Hersteller: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 31.2A; 34.7W; TO220FP
Type of transistor: N-MOSFET
Technology: CoolMOS™
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 31.2A
Power dissipation: 34.7W
Case: TO220FP
Gate-source voltage: ±20V
On-state resistance: 0.11Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhanced
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 31.2A; 34.7W; TO220FP
Type of transistor: N-MOSFET
Technology: CoolMOS™
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 31.2A
Power dissipation: 34.7W
Case: TO220FP
Gate-source voltage: ±20V
On-state resistance: 0.11Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhanced
Produkt ist nicht verfügbar
| IPA65R125C7XKSA1 |
|
Hersteller: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 1A; 32W; TO220FP
Type of transistor: N-MOSFET
Technology: CoolMOS™
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 1A
Power dissipation: 32W
Case: TO220FP
Gate-source voltage: ±20V
On-state resistance: 0.125Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhanced
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 1A; 32W; TO220FP
Type of transistor: N-MOSFET
Technology: CoolMOS™
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 1A
Power dissipation: 32W
Case: TO220FP
Gate-source voltage: ±20V
On-state resistance: 0.125Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhanced
Produkt ist nicht verfügbar
| IPA65R190C7XKSA1 |
|
Hersteller: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 8A; 30W; TO220FP
Type of transistor: N-MOSFET
Technology: CoolMOS™
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 8A
Power dissipation: 30W
Case: TO220FP
Gate-source voltage: ±20V
On-state resistance: 0.19Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhanced
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 8A; 30W; TO220FP
Type of transistor: N-MOSFET
Technology: CoolMOS™
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 8A
Power dissipation: 30W
Case: TO220FP
Gate-source voltage: ±20V
On-state resistance: 0.19Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhanced
auf Bestellung 9 Stücke:
Lieferzeit 14-21 Tag (e)| Anzahl | Preis ohne MwSt |
|---|---|
| 9+ | 7.95 EUR |
| IPA65R190CFDXKSA1 |
|
Hersteller: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 17.5A; 34W; TO220FP
Type of transistor: N-MOSFET
Technology: CoolMOS™
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 17.5A
Power dissipation: 34W
Case: TO220FP
Gate-source voltage: ±20V
On-state resistance: 0.19Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhanced
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 17.5A; 34W; TO220FP
Type of transistor: N-MOSFET
Technology: CoolMOS™
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 17.5A
Power dissipation: 34W
Case: TO220FP
Gate-source voltage: ±20V
On-state resistance: 0.19Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhanced
Produkt ist nicht verfügbar
| IPA65R190E6XKSA1 |
|
Hersteller: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 20.2A; 34W; TO220FP
Type of transistor: N-MOSFET
Technology: CoolMOS™
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 20.2A
Power dissipation: 34W
Case: TO220FP
Gate-source voltage: ±20V
On-state resistance: 0.19Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhanced
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 20.2A; 34W; TO220FP
Type of transistor: N-MOSFET
Technology: CoolMOS™
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 20.2A
Power dissipation: 34W
Case: TO220FP
Gate-source voltage: ±20V
On-state resistance: 0.19Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhanced
Produkt ist nicht verfügbar
| IPA65R225C7XKSA1 |
|
Hersteller: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 7A; 29W; TO220FP
Kind of package: tube
Case: TO220FP
Drain-source voltage: 650V
Drain current: 7A
On-state resistance: 0.225Ω
Type of transistor: N-MOSFET
Power dissipation: 29W
Polarisation: unipolar
Technology: CoolMOS™
Kind of channel: enhanced
Gate-source voltage: ±20V
Mounting: THT
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 7A; 29W; TO220FP
Kind of package: tube
Case: TO220FP
Drain-source voltage: 650V
Drain current: 7A
On-state resistance: 0.225Ω
Type of transistor: N-MOSFET
Power dissipation: 29W
Polarisation: unipolar
Technology: CoolMOS™
Kind of channel: enhanced
Gate-source voltage: ±20V
Mounting: THT
auf Bestellung 45 Stücke:
Lieferzeit 14-21 Tag (e)| Anzahl | Preis ohne MwSt |
|---|---|
| 34+ | 2.14 EUR |
| 38+ | 1.9 EUR |
| IPA65R280E6XKSA1 |
|
Hersteller: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 13.8A; 32W; TO220FP
Type of transistor: N-MOSFET
Technology: CoolMOS™
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 13.8A
Power dissipation: 32W
Case: TO220FP
Gate-source voltage: ±20V
On-state resistance: 0.28Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhanced
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 13.8A; 32W; TO220FP
Type of transistor: N-MOSFET
Technology: CoolMOS™
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 13.8A
Power dissipation: 32W
Case: TO220FP
Gate-source voltage: ±20V
On-state resistance: 0.28Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhanced
Produkt ist nicht verfügbar
| IPA65R310CFDXKSA1 |
|
Hersteller: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 11.4A; 32W; TO220FP
Drain-source voltage: 650V
Drain current: 11.4A
On-state resistance: 0.31Ω
Type of transistor: N-MOSFET
Power dissipation: 32W
Polarisation: unipolar
Case: TO220FP
Mounting: THT
Kind of package: tube
Technology: CoolMOS™
Kind of channel: enhanced
Gate-source voltage: ±20V
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 11.4A; 32W; TO220FP
Drain-source voltage: 650V
Drain current: 11.4A
On-state resistance: 0.31Ω
Type of transistor: N-MOSFET
Power dissipation: 32W
Polarisation: unipolar
Case: TO220FP
Mounting: THT
Kind of package: tube
Technology: CoolMOS™
Kind of channel: enhanced
Gate-source voltage: ±20V
Produkt ist nicht verfügbar
| IPA65R600C6XKSA1 |
|
Hersteller: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 7.3A; 28W; TO220FP
Technology: CoolMOS™
Case: TO220FP
Mounting: THT
On-state resistance: 0.6Ω
Kind of package: tube
Power dissipation: 28W
Kind of channel: enhanced
Drain-source voltage: 650V
Type of transistor: N-MOSFET
Gate-source voltage: ±20V
Polarisation: unipolar
Drain current: 7.3A
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 7.3A; 28W; TO220FP
Technology: CoolMOS™
Case: TO220FP
Mounting: THT
On-state resistance: 0.6Ω
Kind of package: tube
Power dissipation: 28W
Kind of channel: enhanced
Drain-source voltage: 650V
Type of transistor: N-MOSFET
Gate-source voltage: ±20V
Polarisation: unipolar
Drain current: 7.3A
Produkt ist nicht verfügbar
| IPA65R660CFDXKSA1 |
|
Hersteller: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 6A; 27.8W; TO220FP
Technology: CoolMOS™
Case: TO220FP
Mounting: THT
On-state resistance: 0.66Ω
Kind of package: tube
Power dissipation: 27.8W
Kind of channel: enhanced
Drain-source voltage: 650V
Type of transistor: N-MOSFET
Gate-source voltage: ±20V
Polarisation: unipolar
Drain current: 6A
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 6A; 27.8W; TO220FP
Technology: CoolMOS™
Case: TO220FP
Mounting: THT
On-state resistance: 0.66Ω
Kind of package: tube
Power dissipation: 27.8W
Kind of channel: enhanced
Drain-source voltage: 650V
Type of transistor: N-MOSFET
Gate-source voltage: ±20V
Polarisation: unipolar
Drain current: 6A
Produkt ist nicht verfügbar
| IPB65R045C7ATMA1 |
|
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 46A; 227W; PG-TO263-3
Technology: CoolMOS™
Case: PG-TO263-3
Mounting: SMD
On-state resistance: 45mΩ
Power dissipation: 227W
Kind of channel: enhanced
Drain-source voltage: 650V
Type of transistor: N-MOSFET
Gate-source voltage: ±20V
Polarisation: unipolar
Drain current: 46A
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 46A; 227W; PG-TO263-3
Technology: CoolMOS™
Case: PG-TO263-3
Mounting: SMD
On-state resistance: 45mΩ
Power dissipation: 227W
Kind of channel: enhanced
Drain-source voltage: 650V
Type of transistor: N-MOSFET
Gate-source voltage: ±20V
Polarisation: unipolar
Drain current: 46A
Produkt ist nicht verfügbar
| IPB65R065C7ATMA1 |
|
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 33A; 171W; PG-TO263-3
Type of transistor: N-MOSFET
Technology: CoolMOS™
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 33A
Power dissipation: 171W
Case: PG-TO263-3
Gate-source voltage: ±20V
On-state resistance: 65mΩ
Mounting: SMD
Kind of channel: enhanced
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 33A; 171W; PG-TO263-3
Type of transistor: N-MOSFET
Technology: CoolMOS™
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 33A
Power dissipation: 171W
Case: PG-TO263-3
Gate-source voltage: ±20V
On-state resistance: 65mΩ
Mounting: SMD
Kind of channel: enhanced
Produkt ist nicht verfügbar
| IRF100P218XKMA1 |
|
Hersteller: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; StrongIRFET™; unipolar; 100V; 341A; Idm: 836A
Type of transistor: N-MOSFET
Technology: StrongIRFET™
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 341A
Pulsed drain current: 836A
Power dissipation: 556W
Case: PG-TO247-3
Gate-source voltage: ±20V
On-state resistance: 1.28mΩ
Mounting: THT
Kind of package: tube
Kind of channel: enhanced
Category: THT N channel transistors
Description: Transistor: N-MOSFET; StrongIRFET™; unipolar; 100V; 341A; Idm: 836A
Type of transistor: N-MOSFET
Technology: StrongIRFET™
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 341A
Pulsed drain current: 836A
Power dissipation: 556W
Case: PG-TO247-3
Gate-source voltage: ±20V
On-state resistance: 1.28mΩ
Mounting: THT
Kind of package: tube
Kind of channel: enhanced
Produkt ist nicht verfügbar
| IRF1104PBF |
|
Hersteller: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 100A; 170W; TO220AB
Mounting: THT
Case: TO220AB
Drain-source voltage: 40V
Drain current: 100A
On-state resistance: 9mΩ
Type of transistor: N-MOSFET
Power dissipation: 170W
Polarisation: unipolar
Kind of package: tube
Gate charge: 62nC
Technology: HEXFET®
Kind of channel: enhanced
Gate-source voltage: ±20V
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 100A; 170W; TO220AB
Mounting: THT
Case: TO220AB
Drain-source voltage: 40V
Drain current: 100A
On-state resistance: 9mΩ
Type of transistor: N-MOSFET
Power dissipation: 170W
Polarisation: unipolar
Kind of package: tube
Gate charge: 62nC
Technology: HEXFET®
Kind of channel: enhanced
Gate-source voltage: ±20V
auf Bestellung 23 Stücke:
Lieferzeit 14-21 Tag (e)| Anzahl | Preis ohne MwSt |
|---|---|
| 23+ | 3.1 EUR |
| ISP752R |
|
Hersteller: INFINEON TECHNOLOGIES
Category: Power switches - integrated circuits
Description: IC: power switch; high-side; 1.3A; Ch: 1; N-Channel; SMD; SO8
Technology: Industrial PROFET
Case: SO8
On-state resistance: 0.15Ω
Mounting: SMD
Output current: 1.3A
Type of integrated circuit: power switch
Kind of output: N-Channel
Kind of integrated circuit: high-side
Number of channels: 1
Supply voltage: 6...52V DC
Category: Power switches - integrated circuits
Description: IC: power switch; high-side; 1.3A; Ch: 1; N-Channel; SMD; SO8
Technology: Industrial PROFET
Case: SO8
On-state resistance: 0.15Ω
Mounting: SMD
Output current: 1.3A
Type of integrated circuit: power switch
Kind of output: N-Channel
Kind of integrated circuit: high-side
Number of channels: 1
Supply voltage: 6...52V DC
auf Bestellung 2865 Stücke:
Lieferzeit 14-21 Tag (e)| Anzahl | Preis ohne MwSt |
|---|---|
| 29+ | 2.53 EUR |
| 32+ | 2.25 EUR |
| 39+ | 1.87 EUR |
| 41+ | 1.77 EUR |
| FP75R12KT4 |
|
Hersteller: INFINEON TECHNOLOGIES
Category: IGBT modules
Description: Module: IGBT; diode/transistor; buck chopper; Urmax: 1.2kV; Ic: 75A
Application: frequency changer; Inverter
Case: AG-ECONO3-3
Electrical mounting: Press-in PCB
Mechanical mounting: screw
Pulsed collector current: 150A
Collector current: 75A
Gate-emitter voltage: ±20V
Semiconductor structure: diode/transistor
Technology: EconoPIM™ 3
Topology: buck chopper; IGBT three-phase bridge; NTC thermistor; three-phase diode bridge
Max. off-state voltage: 1.2kV
Type of module: IGBT
Power dissipation: 385W
Category: IGBT modules
Description: Module: IGBT; diode/transistor; buck chopper; Urmax: 1.2kV; Ic: 75A
Application: frequency changer; Inverter
Case: AG-ECONO3-3
Electrical mounting: Press-in PCB
Mechanical mounting: screw
Pulsed collector current: 150A
Collector current: 75A
Gate-emitter voltage: ±20V
Semiconductor structure: diode/transistor
Technology: EconoPIM™ 3
Topology: buck chopper; IGBT three-phase bridge; NTC thermistor; three-phase diode bridge
Max. off-state voltage: 1.2kV
Type of module: IGBT
Power dissipation: 385W
auf Bestellung 9 Stücke:
Lieferzeit 14-21 Tag (e)| Anzahl | Preis ohne MwSt |
|---|---|
| 1+ | 278.85 EUR |
| IRFB4229PBF |
|
Hersteller: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 250V; 46A; 330W; TO220AB
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 250V
Drain current: 46A
Power dissipation: 330W
Case: TO220AB
Gate-source voltage: ±30V
On-state resistance: 46mΩ
Mounting: THT
Gate charge: 72nC
Kind of package: tube
Kind of channel: enhanced
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 250V; 46A; 330W; TO220AB
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 250V
Drain current: 46A
Power dissipation: 330W
Case: TO220AB
Gate-source voltage: ±30V
On-state resistance: 46mΩ
Mounting: THT
Gate charge: 72nC
Kind of package: tube
Kind of channel: enhanced
Produkt ist nicht verfügbar
| FF300R12KS4 |
|
Hersteller: INFINEON TECHNOLOGIES
Category: IGBT modules
Description: Module: IGBT; transistor/transistor; IGBT half-bridge; Ic: 300A
Type of module: IGBT
Semiconductor structure: transistor/transistor
Topology: IGBT half-bridge
Max. off-state voltage: 1.2kV
Collector current: 300A
Case: AG-62MM-1
Electrical mounting: screw
Gate-emitter voltage: ±20V
Pulsed collector current: 600A
Power dissipation: 1.95kW
Mechanical mounting: screw
Category: IGBT modules
Description: Module: IGBT; transistor/transistor; IGBT half-bridge; Ic: 300A
Type of module: IGBT
Semiconductor structure: transistor/transistor
Topology: IGBT half-bridge
Max. off-state voltage: 1.2kV
Collector current: 300A
Case: AG-62MM-1
Electrical mounting: screw
Gate-emitter voltage: ±20V
Pulsed collector current: 600A
Power dissipation: 1.95kW
Mechanical mounting: screw
Produkt ist nicht verfügbar
| BAT1504WH6327XTSA1 |
|
Hersteller: INFINEON TECHNOLOGIES
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SMD; 4V; 0.11A; SOT323; 100mW
Type of diode: Schottky rectifying
Mounting: SMD
Max. off-state voltage: 4V
Load current: 0.11A
Semiconductor structure: double series
Case: SOT323
Power dissipation: 0.1W
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SMD; 4V; 0.11A; SOT323; 100mW
Type of diode: Schottky rectifying
Mounting: SMD
Max. off-state voltage: 4V
Load current: 0.11A
Semiconductor structure: double series
Case: SOT323
Power dissipation: 0.1W
auf Bestellung 1509 Stücke:
Lieferzeit 14-21 Tag (e)| Anzahl | Preis ohne MwSt |
|---|---|
| 179+ | 0.4 EUR |
| 199+ | 0.36 EUR |
| 256+ | 0.28 EUR |
| 271+ | 0.26 EUR |
| IPB123N10N3GATMA1 |
|
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 58A; 94W; PG-TO263-3
Type of transistor: N-MOSFET
Technology: OptiMOS™ 3
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 58A
Power dissipation: 94W
Case: PG-TO263-3
Gate-source voltage: ±20V
On-state resistance: 12.3mΩ
Mounting: SMD
Kind of channel: enhanced
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 58A; 94W; PG-TO263-3
Type of transistor: N-MOSFET
Technology: OptiMOS™ 3
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 58A
Power dissipation: 94W
Case: PG-TO263-3
Gate-source voltage: ±20V
On-state resistance: 12.3mΩ
Mounting: SMD
Kind of channel: enhanced
Produkt ist nicht verfügbar
| IPP023N10N5AKSA1 |
|
Hersteller: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 120A; 375W; PG-TO220-3
Type of transistor: N-MOSFET
Technology: OptiMOS™ 5
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 120A
Power dissipation: 375W
Case: PG-TO220-3
Gate-source voltage: ±20V
On-state resistance: 2.3mΩ
Mounting: THT
Kind of package: tube
Kind of channel: enhanced
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 120A; 375W; PG-TO220-3
Type of transistor: N-MOSFET
Technology: OptiMOS™ 5
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 120A
Power dissipation: 375W
Case: PG-TO220-3
Gate-source voltage: ±20V
On-state resistance: 2.3mΩ
Mounting: THT
Kind of package: tube
Kind of channel: enhanced
Produkt ist nicht verfügbar
| BTS711L1 | |
|
Hersteller: INFINEON TECHNOLOGIES
Category: Power switches - integrated circuits
Description: IC: power switch; high-side; 1.9÷4.4A; Ch: 4; N-Channel; SMD; DSO20
Type of integrated circuit: power switch
Kind of integrated circuit: high-side
Output current: 1.9...4.4A
Number of channels: 4
Kind of output: N-Channel
Mounting: SMD
Case: DSO20
On-state resistance: 50mΩ
Supply voltage: 5...34V DC
Technology: Classic PROFET
Category: Power switches - integrated circuits
Description: IC: power switch; high-side; 1.9÷4.4A; Ch: 4; N-Channel; SMD; DSO20
Type of integrated circuit: power switch
Kind of integrated circuit: high-side
Output current: 1.9...4.4A
Number of channels: 4
Kind of output: N-Channel
Mounting: SMD
Case: DSO20
On-state resistance: 50mΩ
Supply voltage: 5...34V DC
Technology: Classic PROFET
auf Bestellung 49 Stücke:
Lieferzeit 14-21 Tag (e)| Anzahl | Preis ohne MwSt |
|---|---|
| 10+ | 7.41 EUR |
| 15+ | 4.79 EUR |
| IRFH8201TRPBF |
|
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 25V; 324A; 156W; PQFN5X6
Mounting: SMD
Case: PQFN5X6
Kind of package: reel
Power dissipation: 156W
Drain current: 324A
Type of transistor: N-MOSFET
Polarisation: unipolar
Technology: HEXFET®
Kind of channel: enhanced
Drain-source voltage: 25V
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 25V; 324A; 156W; PQFN5X6
Mounting: SMD
Case: PQFN5X6
Kind of package: reel
Power dissipation: 156W
Drain current: 324A
Type of transistor: N-MOSFET
Polarisation: unipolar
Technology: HEXFET®
Kind of channel: enhanced
Drain-source voltage: 25V
Produkt ist nicht verfügbar