Produkte > INFINEON TECHNOLOGIES > Alle Produkte des Herstellers INFINEON TECHNOLOGIES (133961) > Seite 2198 nach 2233
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BB85702VH7902XTSA1 | INFINEON TECHNOLOGIES |
 Category: Diodes - othersDescription: Diode: varicap; 30V; 20mA; SC79; single diode; reel,tape; Ir: 200nA Type of diode: varicap Max. off-state voltage: 30V Load current: 20mA Case: SC79 Mounting: SMD Semiconductor structure: single diode Features of semiconductor devices: RF Kind of package: reel; tape Leakage current: 0.2µA Capacitance: 0.45...7.2pF |
auf Bestellung 1978 Stücke: Lieferzeit 14-21 Tag (e) |
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BBY5502VH6327XTSA1 | INFINEON TECHNOLOGIES |
Category: Diodes - others Description: Diode: varicap; 16V; 20mA; SC79; single diode; reel,tape; Ir: 100nA Type of diode: varicap Max. off-state voltage: 16V Load current: 20mA Case: SC79 Mounting: SMD Semiconductor structure: single diode Features of semiconductor devices: RF Kind of package: reel; tape Leakage current: 0.1µA Capacitance: 5.5...19.6pF |
auf Bestellung 2106 Stücke: Lieferzeit 14-21 Tag (e) |
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BAT6302VH6327XTSA1 | INFINEON TECHNOLOGIES |
Category: SMD Schottky diodes Description: Diode: Schottky rectifying; SMD; 3V; 0.1A; SC79; 100mW Type of diode: Schottky rectifying Mounting: SMD Max. off-state voltage: 3V Load current: 0.1A Semiconductor structure: single diode Case: SC79 Power dissipation: 0.1W |
auf Bestellung 2885 Stücke: Lieferzeit 14-21 Tag (e) |
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BAR6302VH6327XTSA1 | INFINEON TECHNOLOGIES |
Category: Diodes - others Description: Diode: switching; 50V; 100mA; 250mW; SC79; single diode; Ufmax: 1.2V Mounting: SMD Max. off-state voltage: 50V Max. forward voltage: 1.2V Load current: 0.1A Semiconductor structure: single diode Power dissipation: 0.25W Kind of package: reel; tape Type of diode: switching Features of semiconductor devices: PIN; RF Case: SC79 |
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| ETD630N16P60HPSA1 | INFINEON TECHNOLOGIES |
Category: Diode - thyristor modules Description: Module: diode-thyristor; 1.6kV; 635A; BG-PB60ECO-1; Ufmax: 1.37V Type of module: diode-thyristor Semiconductor structure: double series Max. off-state voltage: 1.6kV Load current: 635A Max. load current: 700A Case: BG-PB60ECO-1 Max. forward voltage: 1.37V Max. forward impulse current: 19.8kA Gate current: 250mA Electrical mounting: FASTON connectors; screw Mechanical mounting: screw |
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| ETT630N16P60HPSA1 | INFINEON TECHNOLOGIES |
Category: Thyristor modules Description: Module: thyristor; double series; 1.6kV; 635A; BG-PB60ECO-1; screw Type of module: thyristor Case: BG-PB60ECO-1 Max. off-state voltage: 1.6kV Max. forward voltage: 1.37V Load current: 635A Semiconductor structure: double series Gate current: 250mA Max. forward impulse current: 19.8kA Electrical mounting: FASTON connectors; screw Mechanical mounting: screw |
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IPA65R650CEXKSA1 | INFINEON TECHNOLOGIES |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 650V; 7A; 28W; TO220FP Type of transistor: N-MOSFET Technology: CoolMOS™ Polarisation: unipolar Drain-source voltage: 650V Drain current: 7A Power dissipation: 28W Case: TO220FP Gate-source voltage: ±20V On-state resistance: 0.65Ω Mounting: THT Kind of package: tube Kind of channel: enhanced |
auf Bestellung 69 Stücke: Lieferzeit 14-21 Tag (e) |
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| TZ630N28KOF | INFINEON TECHNOLOGIES |
Category: Thyristor modules Description: Module: thyristor; single thyristor; 2.2kV; 630A; BG-PB70-1; screw Type of module: thyristor Semiconductor structure: single thyristor Max. off-state voltage: 2.2kV Load current: 630A Case: BG-PB70-1 Max. forward voltage: 2.18V Max. forward impulse current: 25.5kA Gate current: 250mA Electrical mounting: FASTON connectors; screw Mechanical mounting: screw |
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XC8362FRIABFXUMA1 | INFINEON TECHNOLOGIES |
Category: Infineon Technologies microcontrollers Description: IC: microcontroller 8051; Interface: DALI,I2C,SPI,UART; 8kBFLASH Type of integrated circuit: microcontroller 8051 Clock frequency: 24MHz Interface: DALI; I2C; SPI; UART Supply voltage: 2.5...5.5V DC Case: PG-TSSOP-28 Mounting: SMD Number of 16bit timers: 2 Number of PWM channels: 4 Memory: 8kB FLASH Operating temperature: -40...85°C Integrated circuit features: RTC; watchdog Number of 10bit A/D converters: 4 Number of output compare channels: 1 Number of input capture channels: 1 |
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BSC110N06NS3GATMA1 | INFINEON TECHNOLOGIES |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 60V; 50A; 50W; PG-TDSON-8 Mounting: SMD Polarisation: unipolar Case: PG-TDSON-8 On-state resistance: 11mΩ Power dissipation: 50W Drain current: 50A Drain-source voltage: 60V Technology: OptiMOS™ 3 Kind of channel: enhanced Gate-source voltage: ±20V Type of transistor: N-MOSFET |
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BSC117N08NS5ATMA1 | INFINEON TECHNOLOGIES |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 80V; 49A; 50W; PG-TDSON-8 Mounting: SMD Polarisation: unipolar Case: PG-TDSON-8 On-state resistance: 11.7mΩ Power dissipation: 50W Drain current: 49A Drain-source voltage: 80V Technology: OptiMOS™ 5 Kind of channel: enhanced Gate-source voltage: ±20V Type of transistor: N-MOSFET |
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BSC118N10NSGATMA1 | INFINEON TECHNOLOGIES |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 100V; 71A; 114W; PG-TDSON-8 Mounting: SMD Polarisation: unipolar Case: PG-TDSON-8 On-state resistance: 11.8mΩ Power dissipation: 114W Drain current: 71A Drain-source voltage: 100V Technology: OptiMOS™ 2 Kind of channel: enhanced Gate-source voltage: ±20V Type of transistor: N-MOSFET |
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BSC120N03LSGATMA1 | INFINEON TECHNOLOGIES |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 30V; 33A; 28W; PG-TDSON-8 Type of transistor: N-MOSFET Technology: OptiMOS™ 3 Polarisation: unipolar Drain-source voltage: 30V Drain current: 33A Power dissipation: 28W Case: PG-TDSON-8 Gate-source voltage: ±20V On-state resistance: 12mΩ Mounting: SMD Kind of channel: enhanced |
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BSC120N03MSGATMA1 | INFINEON TECHNOLOGIES |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 30V; 36A; 28W; PG-TDSON-8 Type of transistor: N-MOSFET Technology: OptiMOS™ 3 Polarisation: unipolar Drain-source voltage: 30V Drain current: 36A Power dissipation: 28W Case: PG-TDSON-8 Gate-source voltage: ±20V On-state resistance: 12mΩ Mounting: SMD Kind of channel: enhanced |
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BSC123N08NS3GATMA1 | INFINEON TECHNOLOGIES |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 80V; 55A; 66W; PG-TDSON-8 Mounting: SMD Polarisation: unipolar Case: PG-TDSON-8 On-state resistance: 12.3mΩ Power dissipation: 66W Drain current: 55A Drain-source voltage: 80V Technology: OptiMOS™ 3 Kind of channel: enhanced Gate-source voltage: ±20V Type of transistor: N-MOSFET |
auf Bestellung 2887 Stücke: Lieferzeit 14-21 Tag (e) |
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BSC123N10LSGATMA1 | INFINEON TECHNOLOGIES |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 100V; 71A; 114W; PG-TDSON-8 Mounting: SMD Polarisation: unipolar Case: PG-TDSON-8 On-state resistance: 12.3mΩ Power dissipation: 114W Drain current: 71A Drain-source voltage: 100V Technology: OptiMOS™ 2 Kind of channel: enhanced Gate-source voltage: ±20V Type of transistor: N-MOSFET |
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BSC12DN20NS3GATMA1 | INFINEON TECHNOLOGIES |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 200V; 11.3A; 50W; PG-TDSON-8 Mounting: SMD Polarisation: unipolar Case: PG-TDSON-8 On-state resistance: 0.125Ω Power dissipation: 50W Drain current: 11.3A Drain-source voltage: 200V Technology: OptiMOS™ 3 Kind of channel: enhanced Gate-source voltage: ±20V Type of transistor: N-MOSFET |
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BSC130P03LSGAUMA1 | INFINEON TECHNOLOGIES |
Category: SMD P channel transistors Description: Transistor: P-MOSFET; unipolar; -30V; -22.5A; 69W; PG-TDSON-8 Mounting: SMD Technology: OptiMOS™ P Kind of channel: enhanced Gate-source voltage: ±25V Case: PG-TDSON-8 Drain-source voltage: -30V Drain current: -22.5A On-state resistance: 13mΩ Type of transistor: P-MOSFET Power dissipation: 69W Polarisation: unipolar |
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BSC160N10NS3GATMA1 | INFINEON TECHNOLOGIES |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 100V; 42A; 60W; PG-TDSON-8 Technology: OptiMOS™ 3 Mounting: SMD Power dissipation: 60W Case: PG-TDSON-8 Drain-source voltage: 100V Drain current: 42A On-state resistance: 16mΩ Type of transistor: N-MOSFET Polarisation: unipolar Kind of channel: enhanced Gate-source voltage: ±20V |
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BSC16DN25NS3GATMA1 | INFINEON TECHNOLOGIES |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 250V; 10.9A; 62.5W; PG-TDSON-8 Technology: OptiMOS™ 3 Mounting: SMD Power dissipation: 62.5W Case: PG-TDSON-8 Drain-source voltage: 250V Drain current: 10.9A On-state resistance: 0.165Ω Type of transistor: N-MOSFET Polarisation: unipolar Kind of channel: enhanced Gate-source voltage: ±20V |
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BSC190N12NS3GATMA1 | INFINEON TECHNOLOGIES |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 120V; 44A; 69W; PG-TDSON-8 Mounting: SMD Polarisation: unipolar Case: PG-TDSON-8 On-state resistance: 19mΩ Power dissipation: 69W Drain current: 44A Drain-source voltage: 120V Technology: OptiMOS™ 3 Kind of channel: enhanced Gate-source voltage: ±20V Type of transistor: N-MOSFET |
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BSC190N15NS3GATMA1 | INFINEON TECHNOLOGIES |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 150V; 50A; 125W; PG-TSDSON-8 Mounting: SMD Polarisation: unipolar Case: PG-TSDSON-8 On-state resistance: 19mΩ Power dissipation: 125W Drain current: 50A Drain-source voltage: 150V Technology: OptiMOS™ 3 Kind of channel: enhanced Gate-source voltage: ±20V Type of transistor: N-MOSFET |
auf Bestellung 2154 Stücke: Lieferzeit 14-21 Tag (e) |
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BSC196N10NSGATMA1 | INFINEON TECHNOLOGIES |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 100V; 45A; 78W; PG-TDSON-8 Mounting: SMD Polarisation: unipolar Case: PG-TDSON-8 On-state resistance: 19.6mΩ Power dissipation: 78W Drain current: 45A Drain-source voltage: 100V Technology: OptiMOS™ 2 Kind of channel: enhanced Gate-source voltage: ±20V Type of transistor: N-MOSFET |
Produkt ist nicht verfügbar |
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BTS3118N | INFINEON TECHNOLOGIES |
Category: Power switches - integrated circuits Description: IC: power switch; low-side; 2.17A; Ch: 1; N-Channel; SMD; SOT223-3 Mounting: SMD Case: SOT223-3 Technology: HITFET® Kind of output: N-Channel Output voltage: 42V Type of integrated circuit: power switch Number of channels: 1 On-state resistance: 70mΩ Output current: 2.17A Kind of integrated circuit: low-side |
auf Bestellung 3870 Stücke: Lieferzeit 14-21 Tag (e) |
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BAR6402VH6327XTSA1 | INFINEON TECHNOLOGIES |
Category: Diodes - others Description: Diode: switching; 150V; 100mA; 250mW; SC79; single diode; reel,tape Type of diode: switching Max. off-state voltage: 150V Load current: 0.1A Power dissipation: 0.25W Case: SC79 Mounting: SMD Semiconductor structure: single diode Features of semiconductor devices: PIN; RF Max. forward voltage: 1.1V Kind of package: reel; tape |
auf Bestellung 2505 Stücke: Lieferzeit 14-21 Tag (e) |
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BAR6405WH6327XTSA1 | INFINEON TECHNOLOGIES |
Category: Diodes - others Description: Diode: switching; 150V; 100mA; 250mW; SOT323; Ufmax: 1.1V; reel,tape Type of diode: switching Max. off-state voltage: 150V Load current: 0.1A Power dissipation: 0.25W Case: SOT323 Mounting: SMD Semiconductor structure: common cathode; double Features of semiconductor devices: PIN; RF Max. forward voltage: 1.1V Kind of package: reel; tape |
auf Bestellung 2905 Stücke: Lieferzeit 14-21 Tag (e) |
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IRF250P224 | INFINEON TECHNOLOGIES |
Category: THT N channel transistors Description: Transistor: N-MOSFET; StrongIRFET™; unipolar; 250V; 68A; 313W Type of transistor: N-MOSFET Technology: StrongIRFET™ Polarisation: unipolar Drain-source voltage: 250V Drain current: 68A Power dissipation: 313W Case: TO247AC Gate-source voltage: ±20V On-state resistance: 12mΩ Mounting: THT Gate charge: 203nC Kind of package: tube Kind of channel: enhanced |
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IRF250P225 | INFINEON TECHNOLOGIES |
Category: THT N channel transistors Description: Transistor: N-MOSFET; StrongIRFET™; unipolar; 250V; 49A; 313W Type of transistor: N-MOSFET Technology: StrongIRFET™ Polarisation: unipolar Drain-source voltage: 250V Drain current: 49A Power dissipation: 313W Case: TO247AC Gate-source voltage: ±20V On-state resistance: 22mΩ Mounting: THT Gate charge: 96nC Kind of package: tube Kind of channel: enhanced |
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IRFZ46NLPBF | INFINEON TECHNOLOGIES |
 Category: THT N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 55V; 53A; 120W; TO262 Type of transistor: N-MOSFET Technology: HEXFET® Polarisation: unipolar Drain-source voltage: 55V Drain current: 53A Power dissipation: 120W Case: TO262 Gate-source voltage: ±20V On-state resistance: 16.5mΩ Mounting: THT Gate charge: 48nC Kind of channel: enhanced |
auf Bestellung 79 Stücke: Lieferzeit 14-21 Tag (e) |
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IRFZ46NPBF | INFINEON TECHNOLOGIES |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 55V; 46A; 88W; TO220AB Type of transistor: N-MOSFET Technology: HEXFET® Polarisation: unipolar Drain-source voltage: 55V Drain current: 46A Power dissipation: 88W Case: TO220AB Gate-source voltage: ±20V On-state resistance: 16.5mΩ Mounting: THT Gate charge: 48nC Kind of package: tube Kind of channel: enhanced |
auf Bestellung 227 Stücke: Lieferzeit 14-21 Tag (e) |
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IR2172SPBF | INFINEON TECHNOLOGIES |
Category: MOSFET/IGBT drivers Description: IC: driver; current sensor; SO8; 20mA; 625mW; 9.5÷20VDC; 600V Type of integrated circuit: driver Kind of integrated circuit: current sensor Case: SO8 Output current: 20mA Power: 625mW Supply voltage: 9.5...20V DC Mounting: SMD Operating temperature: -40...125°C Kind of package: tube Voltage class: 600V |
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IPZ40N04S53R1ATMA1 | INFINEON TECHNOLOGIES |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 40V; 40A; 71W; PG-TSDSON-8 Technology: OptiMOS™ 5 Mounting: SMD Case: PG-TSDSON-8 Power dissipation: 71W Application: automotive industry Polarisation: unipolar Kind of channel: enhanced Gate-source voltage: ±20V Drain-source voltage: 40V Drain current: 40A On-state resistance: 3.1mΩ Type of transistor: N-MOSFET |
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IPZ40N04S5-5R4 | INFINEON TECHNOLOGIES |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 40V; 40A; 48W; PG-TSDSON-8 Technology: OptiMOS™ 5 Mounting: SMD Case: PG-TSDSON-8 Power dissipation: 48W Application: automotive industry Polarisation: unipolar Gate charge: 23nC Kind of channel: enhanced Gate-source voltage: ±20V Drain-source voltage: 40V Drain current: 40A On-state resistance: 6.3mΩ Type of transistor: N-MOSFET |
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IPZ40N04S5-8R4 | INFINEON TECHNOLOGIES |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 40V; 40A; 34W; PG-TSDSON-8 Technology: OptiMOS™ 5 Mounting: SMD Case: PG-TSDSON-8 Power dissipation: 34W Application: automotive industry Polarisation: unipolar Gate charge: 13.7nC Kind of channel: enhanced Gate-source voltage: ±20V Drain-source voltage: 40V Drain current: 40A On-state resistance: 9.9mΩ Type of transistor: N-MOSFET |
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IPZ40N04S5L-2R8 | INFINEON TECHNOLOGIES |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 40V; 40A; 71W; PG-TSDSON-8 Technology: OptiMOS™ 5 Mounting: SMD Case: PG-TSDSON-8 Power dissipation: 71W Application: automotive industry Polarisation: unipolar Gate charge: 52nC Kind of channel: enhanced Gate-source voltage: ±16V Drain-source voltage: 40V Drain current: 40A On-state resistance: 3.8mΩ Type of transistor: N-MOSFET |
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IPZ40N04S5L-4R8 | INFINEON TECHNOLOGIES |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 40V; 40A; 48W; PG-TSDSON-8 Technology: OptiMOS™ 5 Mounting: SMD Case: PG-TSDSON-8 Power dissipation: 48W Application: automotive industry Polarisation: unipolar Gate charge: 29nC Kind of channel: enhanced Gate-source voltage: ±16V Drain-source voltage: 40V Drain current: 40A On-state resistance: 6.7mΩ Type of transistor: N-MOSFET |
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IPZ40N04S5L-7R4 | INFINEON TECHNOLOGIES |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 40V; 40A; 34W; PG-TSDSON-8 Technology: OptiMOS™ 5 Mounting: SMD Case: PG-TSDSON-8 Power dissipation: 34W Application: automotive industry Polarisation: unipolar Gate charge: 17nC Kind of channel: enhanced Gate-source voltage: ±16V Drain-source voltage: 40V Drain current: 40A On-state resistance: 10.7mΩ Type of transistor: N-MOSFET |
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BSB165N15NZ3GXUMA1 | INFINEON TECHNOLOGIES |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 150V; 45A; 78W Drain-source voltage: 150V Drain current: 45A On-state resistance: 16.5mΩ Type of transistor: N-MOSFET Power dissipation: 78W Polarisation: unipolar Technology: OptiMOS™ Kind of channel: enhanced Gate-source voltage: ±20V Mounting: SMD Case: CanPAK™ MZ; MG-WDSON-2 |
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BSB015N04NX3GXUMA1 | INFINEON TECHNOLOGIES |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 40V; 180A; 89W Type of transistor: N-MOSFET Technology: OptiMOS™ Polarisation: unipolar Drain-source voltage: 40V Drain current: 180A Power dissipation: 89W Case: CanPAK™ MX; MG-WDSON-2 Gate-source voltage: ±20V On-state resistance: 1.5mΩ Mounting: SMD Kind of channel: enhanced |
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IPB015N04LGATMA1 | INFINEON TECHNOLOGIES |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 40V; 120A; 250W; PG-TO263-3 Type of transistor: N-MOSFET Technology: OptiMOS™ 3 Polarisation: unipolar Drain-source voltage: 40V Drain current: 120A Power dissipation: 250W Case: PG-TO263-3 Gate-source voltage: ±20V On-state resistance: 1.5mΩ Mounting: SMD Gate charge: 260nC Kind of channel: enhanced |
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IPB015N04NGATMA1 | INFINEON TECHNOLOGIES |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 40V; 120A; 250W; PG-TO263-3 Type of transistor: N-MOSFET Technology: OptiMOS™ 3 Polarisation: unipolar Drain-source voltage: 40V Drain current: 120A Power dissipation: 250W Case: PG-TO263-3 Gate-source voltage: ±20V On-state resistance: 1.5mΩ Mounting: SMD Kind of channel: enhanced |
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IPP015N04NGXKSA1 | INFINEON TECHNOLOGIES |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 40V; 120A; 250W; PG-TO220-3 Type of transistor: N-MOSFET Technology: OptiMOS™ 3 Polarisation: unipolar Drain-source voltage: 40V Drain current: 120A Power dissipation: 250W Case: PG-TO220-3 Gate-source voltage: ±20V On-state resistance: 1.5mΩ Mounting: THT Kind of package: tube Kind of channel: enhanced |
auf Bestellung 28 Stücke: Lieferzeit 14-21 Tag (e) |
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IRFI131ONPBF | INFINEON TECHNOLOGIES |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 100V; 22A; 45W; TO220FP Type of transistor: N-MOSFET Technology: HEXFET® Polarisation: unipolar Drain-source voltage: 100V Drain current: 22A Power dissipation: 45W Case: TO220FP Gate-source voltage: ±20V On-state resistance: 36mΩ Mounting: THT Gate charge: 80nC Kind of package: tube Kind of channel: enhanced |
auf Bestellung 87 Stücke: Lieferzeit 14-21 Tag (e) |
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IRFI4110GPBF | INFINEON TECHNOLOGIES |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 100V; 72A; 61W; TO220FP Type of transistor: N-MOSFET Technology: HEXFET® Polarisation: unipolar Drain-source voltage: 100V Drain current: 72A Power dissipation: 61W Case: TO220FP Mounting: THT Kind of package: tube Kind of channel: enhanced |
auf Bestellung 65 Stücke: Lieferzeit 14-21 Tag (e) |
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IRFI4229PBF | INFINEON TECHNOLOGIES |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 250V; 19A; 46W; TO220FP Kind of package: tube Drain-source voltage: 250V Drain current: 19A Type of transistor: N-MOSFET Power dissipation: 46W Polarisation: unipolar Technology: HEXFET® Kind of channel: enhanced Mounting: THT Case: TO220FP |
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IRFI4321PBF | INFINEON TECHNOLOGIES |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 150V; 34A; 46W; TO220FP Type of transistor: N-MOSFET Technology: HEXFET® Polarisation: unipolar Drain-source voltage: 150V Drain current: 34A Power dissipation: 46W Case: TO220FP Mounting: THT Kind of package: tube Kind of channel: enhanced |
auf Bestellung 83 Stücke: Lieferzeit 14-21 Tag (e) |
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IRFI4410ZPBF | INFINEON TECHNOLOGIES |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 100V; 30A; 47W; TO220FP Type of transistor: N-MOSFET Technology: HEXFET® Polarisation: unipolar Drain-source voltage: 100V Drain current: 30A Power dissipation: 47W Case: TO220FP Gate-source voltage: ±30V On-state resistance: 9.3mΩ Mounting: THT Gate charge: 81nC Kind of package: tube Kind of channel: enhanced |
auf Bestellung 1142 Stücke: Lieferzeit 14-21 Tag (e) |
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IRFI530NPBF | INFINEON TECHNOLOGIES |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 100V; 11A; 33W; TO220FP Type of transistor: N-MOSFET Technology: HEXFET® Polarisation: unipolar Drain-source voltage: 100V Drain current: 11A Power dissipation: 33W Case: TO220FP Gate-source voltage: ±20V On-state resistance: 0.11Ω Mounting: THT Gate charge: 29.3nC Kind of package: tube Kind of channel: enhanced |
auf Bestellung 100 Stücke: Lieferzeit 14-21 Tag (e) |
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IRFI540NPBF | INFINEON TECHNOLOGIES |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 100V; 18A; 42W; TO220FP Kind of package: tube Mounting: THT Power dissipation: 42W Polarisation: unipolar Gate charge: 62.7nC Technology: HEXFET® Kind of channel: enhanced Gate-source voltage: ±20V Case: TO220FP Drain-source voltage: 100V Drain current: 18A On-state resistance: 52mΩ Type of transistor: N-MOSFET |
Produkt ist nicht verfügbar |
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IPB033N10N5LF | INFINEON TECHNOLOGIES |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 100V; 108A; 179W; PG-TO263-3 Type of transistor: N-MOSFET Technology: OptiMOS™ 5 Polarisation: unipolar Drain-source voltage: 100V Drain current: 108A Power dissipation: 179W Case: PG-TO263-3 Gate-source voltage: ±20V On-state resistance: 3.3mΩ Mounting: SMD Kind of channel: enhanced |
Produkt ist nicht verfügbar |
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| BGSA14GN10E6327XTSA1 | INFINEON TECHNOLOGIES |
Category: Analog multiplexers and switches Description: IC: RF switch; SP4T; Ch: 4; TSNP10; 1.8÷3.6VDC; 0.1÷5GHz Type of integrated circuit: RF switch Case: TSNP10 Mounting: SMD Number of channels: 4 Application: telecommunication Supply voltage: 1.8...3.6V DC Bandwidth: 0.1...5GHz Output configuration: SP4T |
Produkt ist nicht verfügbar |
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IR2108SPBF | INFINEON TECHNOLOGIES |
Category: MOSFET/IGBT drivers Description: IC: driver; MOSFET half-bridge; high-/low-side,gate driver; SO8 Type of integrated circuit: driver Topology: MOSFET half-bridge Kind of integrated circuit: gate driver; high-/low-side Case: SO8 Output current: -350...200mA Power: 625mW Number of channels: 2 Supply voltage: 10...20V DC Integrated circuit features: charge pump; dead time; integrated bootstrap functionality Mounting: SMD Operating temperature: -40...125°C Kind of package: tube Voltage class: 600V Turn-on time: 220ns Turn-off time: 200ns |
auf Bestellung 1 Stücke: Lieferzeit 14-21 Tag (e) |
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BSO613SPVGXUMA1 | INFINEON TECHNOLOGIES |
Category: SMD P channel transistors Description: Transistor: P-MOSFET; unipolar; -60V; -3.44A; Idm: -13.8A; 2.5W; SO8 Type of transistor: P-MOSFET Technology: SIPMOS™ Polarisation: unipolar Drain-source voltage: -60V Drain current: -3.44A Pulsed drain current: -13.8A Power dissipation: 2.5W Case: SO8 Gate-source voltage: ±20V On-state resistance: 0.13Ω Mounting: SMD Kind of channel: enhanced |
Produkt ist nicht verfügbar |
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BSF134N10NJ3GXUMA1 | INFINEON TECHNOLOGIES |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 100V; 40A; 28W Mounting: SMD Case: CanPAK™ SJ; MG-WDSON-2 Power dissipation: 28W Technology: OptiMOS™ Polarisation: unipolar Kind of channel: enhanced Gate-source voltage: ±20V Drain-source voltage: 100V Drain current: 40A On-state resistance: 13.4mΩ Type of transistor: N-MOSFET |
Produkt ist nicht verfügbar |
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SN7002NH6433XTMA1 | INFINEON TECHNOLOGIES |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 60V; 0.16A; 0.36W; SOT23 Type of transistor: N-MOSFET Technology: SIPMOS™ Polarisation: unipolar Drain-source voltage: 60V Drain current: 0.16A Power dissipation: 0.36W Case: SOT23 Gate-source voltage: ±20V On-state resistance: 5Ω Mounting: SMD Kind of channel: enhanced |
auf Bestellung 7340 Stücke: Lieferzeit 14-21 Tag (e) |
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BSZ105N04NSGATMA1 | INFINEON TECHNOLOGIES |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 40V; 29A; 35W; PG-TSDSON-8 Drain-source voltage: 40V Drain current: 29A On-state resistance: 10.5mΩ Type of transistor: N-MOSFET Power dissipation: 35W Polarisation: unipolar Case: PG-TSDSON-8 Gate charge: 13nC Mounting: SMD Technology: OptiMOS™ 3 Kind of channel: enhanced Gate-source voltage: ±20V |
Produkt ist nicht verfügbar |
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IPD031N03LGATMA1 | INFINEON TECHNOLOGIES |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 30V; 79A; 94W; PG-TO252-3 Power dissipation: 94W Case: PG-TO252-3 Mounting: SMD Polarisation: unipolar Technology: OptiMOS™ 3 Kind of channel: enhanced Gate-source voltage: ±20V Drain-source voltage: 30V Drain current: 79A On-state resistance: 3.1mΩ Type of transistor: N-MOSFET |
auf Bestellung 2610 Stücke: Lieferzeit 14-21 Tag (e) |
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IPD034N06N3GATMA1 | INFINEON TECHNOLOGIES |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 60V; 100A; 167W; PG-TO252-3 Mounting: SMD Case: PG-TO252-3 Polarisation: unipolar Technology: OptiMOS™ 3 Kind of channel: enhanced Gate-source voltage: ±20V Drain-source voltage: 60V Drain current: 100A On-state resistance: 3.4mΩ Type of transistor: N-MOSFET Power dissipation: 167W |
auf Bestellung 1880 Stücke: Lieferzeit 14-21 Tag (e) |
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IPD038N06N3GATMA1 | INFINEON TECHNOLOGIES |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 60V; 90A; 188W; PG-TO252-3 Power dissipation: 188W Case: PG-TO252-3 Mounting: SMD Polarisation: unipolar Technology: OptiMOS™ 3 Kind of channel: enhanced Gate-source voltage: ±20V Drain-source voltage: 60V Drain current: 90A On-state resistance: 3.8mΩ Type of transistor: N-MOSFET |
Produkt ist nicht verfügbar |
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IPD075N03LGATMA1 | INFINEON TECHNOLOGIES |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 30V; 35A; 47W; PG-TO252-3 Power dissipation: 47W Case: PG-TO252-3 Mounting: SMD Polarisation: unipolar Technology: OptiMOS™ 3 Kind of channel: enhanced Gate-source voltage: ±20V Drain-source voltage: 30V Drain current: 35A On-state resistance: 7.5mΩ Type of transistor: N-MOSFET |
auf Bestellung 2491 Stücke: Lieferzeit 14-21 Tag (e) |
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| BB85702VH7902XTSA1 |
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Hersteller: INFINEON TECHNOLOGIES
Category: Diodes - others
Description: Diode: varicap; 30V; 20mA; SC79; single diode; reel,tape; Ir: 200nA
Type of diode: varicap
Max. off-state voltage: 30V
Load current: 20mA
Case: SC79
Mounting: SMD
Semiconductor structure: single diode
Features of semiconductor devices: RF
Kind of package: reel; tape
Leakage current: 0.2µA
Capacitance: 0.45...7.2pF
Category: Diodes - others
Description: Diode: varicap; 30V; 20mA; SC79; single diode; reel,tape; Ir: 200nA
Type of diode: varicap
Max. off-state voltage: 30V
Load current: 20mA
Case: SC79
Mounting: SMD
Semiconductor structure: single diode
Features of semiconductor devices: RF
Kind of package: reel; tape
Leakage current: 0.2µA
Capacitance: 0.45...7.2pF
auf Bestellung 1978 Stücke:
Lieferzeit 14-21 Tag (e)| Anzahl | Preis ohne MwSt |
|---|---|
| 214+ | 0.33 EUR |
| 275+ | 0.26 EUR |
| 348+ | 0.21 EUR |
| 365+ | 0.2 EUR |
| BBY5502VH6327XTSA1 |
|
Hersteller: INFINEON TECHNOLOGIES
Category: Diodes - others
Description: Diode: varicap; 16V; 20mA; SC79; single diode; reel,tape; Ir: 100nA
Type of diode: varicap
Max. off-state voltage: 16V
Load current: 20mA
Case: SC79
Mounting: SMD
Semiconductor structure: single diode
Features of semiconductor devices: RF
Kind of package: reel; tape
Leakage current: 0.1µA
Capacitance: 5.5...19.6pF
Category: Diodes - others
Description: Diode: varicap; 16V; 20mA; SC79; single diode; reel,tape; Ir: 100nA
Type of diode: varicap
Max. off-state voltage: 16V
Load current: 20mA
Case: SC79
Mounting: SMD
Semiconductor structure: single diode
Features of semiconductor devices: RF
Kind of package: reel; tape
Leakage current: 0.1µA
Capacitance: 5.5...19.6pF
auf Bestellung 2106 Stücke:
Lieferzeit 14-21 Tag (e)| Anzahl | Preis ohne MwSt |
|---|---|
| 131+ | 0.55 EUR |
| 224+ | 0.32 EUR |
| 258+ | 0.28 EUR |
| 272+ | 0.26 EUR |
| BAT6302VH6327XTSA1 |
|
Hersteller: INFINEON TECHNOLOGIES
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SMD; 3V; 0.1A; SC79; 100mW
Type of diode: Schottky rectifying
Mounting: SMD
Max. off-state voltage: 3V
Load current: 0.1A
Semiconductor structure: single diode
Case: SC79
Power dissipation: 0.1W
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SMD; 3V; 0.1A; SC79; 100mW
Type of diode: Schottky rectifying
Mounting: SMD
Max. off-state voltage: 3V
Load current: 0.1A
Semiconductor structure: single diode
Case: SC79
Power dissipation: 0.1W
auf Bestellung 2885 Stücke:
Lieferzeit 14-21 Tag (e)| Anzahl | Preis ohne MwSt |
|---|---|
| 321+ | 0.22 EUR |
| 358+ | 0.2 EUR |
| 404+ | 0.18 EUR |
| 459+ | 0.16 EUR |
| 486+ | 0.15 EUR |
| BAR6302VH6327XTSA1 |
|
Hersteller: INFINEON TECHNOLOGIES
Category: Diodes - others
Description: Diode: switching; 50V; 100mA; 250mW; SC79; single diode; Ufmax: 1.2V
Mounting: SMD
Max. off-state voltage: 50V
Max. forward voltage: 1.2V
Load current: 0.1A
Semiconductor structure: single diode
Power dissipation: 0.25W
Kind of package: reel; tape
Type of diode: switching
Features of semiconductor devices: PIN; RF
Case: SC79
Category: Diodes - others
Description: Diode: switching; 50V; 100mA; 250mW; SC79; single diode; Ufmax: 1.2V
Mounting: SMD
Max. off-state voltage: 50V
Max. forward voltage: 1.2V
Load current: 0.1A
Semiconductor structure: single diode
Power dissipation: 0.25W
Kind of package: reel; tape
Type of diode: switching
Features of semiconductor devices: PIN; RF
Case: SC79
Produkt ist nicht verfügbar
| ETD630N16P60HPSA1 |
|
Hersteller: INFINEON TECHNOLOGIES
Category: Diode - thyristor modules
Description: Module: diode-thyristor; 1.6kV; 635A; BG-PB60ECO-1; Ufmax: 1.37V
Type of module: diode-thyristor
Semiconductor structure: double series
Max. off-state voltage: 1.6kV
Load current: 635A
Max. load current: 700A
Case: BG-PB60ECO-1
Max. forward voltage: 1.37V
Max. forward impulse current: 19.8kA
Gate current: 250mA
Electrical mounting: FASTON connectors; screw
Mechanical mounting: screw
Category: Diode - thyristor modules
Description: Module: diode-thyristor; 1.6kV; 635A; BG-PB60ECO-1; Ufmax: 1.37V
Type of module: diode-thyristor
Semiconductor structure: double series
Max. off-state voltage: 1.6kV
Load current: 635A
Max. load current: 700A
Case: BG-PB60ECO-1
Max. forward voltage: 1.37V
Max. forward impulse current: 19.8kA
Gate current: 250mA
Electrical mounting: FASTON connectors; screw
Mechanical mounting: screw
Produkt ist nicht verfügbar
| ETT630N16P60HPSA1 |
|
Hersteller: INFINEON TECHNOLOGIES
Category: Thyristor modules
Description: Module: thyristor; double series; 1.6kV; 635A; BG-PB60ECO-1; screw
Type of module: thyristor
Case: BG-PB60ECO-1
Max. off-state voltage: 1.6kV
Max. forward voltage: 1.37V
Load current: 635A
Semiconductor structure: double series
Gate current: 250mA
Max. forward impulse current: 19.8kA
Electrical mounting: FASTON connectors; screw
Mechanical mounting: screw
Category: Thyristor modules
Description: Module: thyristor; double series; 1.6kV; 635A; BG-PB60ECO-1; screw
Type of module: thyristor
Case: BG-PB60ECO-1
Max. off-state voltage: 1.6kV
Max. forward voltage: 1.37V
Load current: 635A
Semiconductor structure: double series
Gate current: 250mA
Max. forward impulse current: 19.8kA
Electrical mounting: FASTON connectors; screw
Mechanical mounting: screw
Produkt ist nicht verfügbar
| IPA65R650CEXKSA1 |
|
Hersteller: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 7A; 28W; TO220FP
Type of transistor: N-MOSFET
Technology: CoolMOS™
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 7A
Power dissipation: 28W
Case: TO220FP
Gate-source voltage: ±20V
On-state resistance: 0.65Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhanced
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 7A; 28W; TO220FP
Type of transistor: N-MOSFET
Technology: CoolMOS™
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 7A
Power dissipation: 28W
Case: TO220FP
Gate-source voltage: ±20V
On-state resistance: 0.65Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhanced
auf Bestellung 69 Stücke:
Lieferzeit 14-21 Tag (e)| Anzahl | Preis ohne MwSt |
|---|---|
| 42+ | 1.73 EUR |
| 52+ | 1.39 EUR |
| 57+ | 1.26 EUR |
| 63+ | 1.14 EUR |
| 67+ | 1.07 EUR |
| TZ630N28KOF |
|
Hersteller: INFINEON TECHNOLOGIES
Category: Thyristor modules
Description: Module: thyristor; single thyristor; 2.2kV; 630A; BG-PB70-1; screw
Type of module: thyristor
Semiconductor structure: single thyristor
Max. off-state voltage: 2.2kV
Load current: 630A
Case: BG-PB70-1
Max. forward voltage: 2.18V
Max. forward impulse current: 25.5kA
Gate current: 250mA
Electrical mounting: FASTON connectors; screw
Mechanical mounting: screw
Category: Thyristor modules
Description: Module: thyristor; single thyristor; 2.2kV; 630A; BG-PB70-1; screw
Type of module: thyristor
Semiconductor structure: single thyristor
Max. off-state voltage: 2.2kV
Load current: 630A
Case: BG-PB70-1
Max. forward voltage: 2.18V
Max. forward impulse current: 25.5kA
Gate current: 250mA
Electrical mounting: FASTON connectors; screw
Mechanical mounting: screw
Produkt ist nicht verfügbar
| XC8362FRIABFXUMA1 |
|
Hersteller: INFINEON TECHNOLOGIES
Category: Infineon Technologies microcontrollers
Description: IC: microcontroller 8051; Interface: DALI,I2C,SPI,UART; 8kBFLASH
Type of integrated circuit: microcontroller 8051
Clock frequency: 24MHz
Interface: DALI; I2C; SPI; UART
Supply voltage: 2.5...5.5V DC
Case: PG-TSSOP-28
Mounting: SMD
Number of 16bit timers: 2
Number of PWM channels: 4
Memory: 8kB FLASH
Operating temperature: -40...85°C
Integrated circuit features: RTC; watchdog
Number of 10bit A/D converters: 4
Number of output compare channels: 1
Number of input capture channels: 1
Category: Infineon Technologies microcontrollers
Description: IC: microcontroller 8051; Interface: DALI,I2C,SPI,UART; 8kBFLASH
Type of integrated circuit: microcontroller 8051
Clock frequency: 24MHz
Interface: DALI; I2C; SPI; UART
Supply voltage: 2.5...5.5V DC
Case: PG-TSSOP-28
Mounting: SMD
Number of 16bit timers: 2
Number of PWM channels: 4
Memory: 8kB FLASH
Operating temperature: -40...85°C
Integrated circuit features: RTC; watchdog
Number of 10bit A/D converters: 4
Number of output compare channels: 1
Number of input capture channels: 1
Produkt ist nicht verfügbar
| BSC110N06NS3GATMA1 |
|
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 50A; 50W; PG-TDSON-8
Mounting: SMD
Polarisation: unipolar
Case: PG-TDSON-8
On-state resistance: 11mΩ
Power dissipation: 50W
Drain current: 50A
Drain-source voltage: 60V
Technology: OptiMOS™ 3
Kind of channel: enhanced
Gate-source voltage: ±20V
Type of transistor: N-MOSFET
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 50A; 50W; PG-TDSON-8
Mounting: SMD
Polarisation: unipolar
Case: PG-TDSON-8
On-state resistance: 11mΩ
Power dissipation: 50W
Drain current: 50A
Drain-source voltage: 60V
Technology: OptiMOS™ 3
Kind of channel: enhanced
Gate-source voltage: ±20V
Type of transistor: N-MOSFET
Produkt ist nicht verfügbar
| BSC117N08NS5ATMA1 |
|
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 80V; 49A; 50W; PG-TDSON-8
Mounting: SMD
Polarisation: unipolar
Case: PG-TDSON-8
On-state resistance: 11.7mΩ
Power dissipation: 50W
Drain current: 49A
Drain-source voltage: 80V
Technology: OptiMOS™ 5
Kind of channel: enhanced
Gate-source voltage: ±20V
Type of transistor: N-MOSFET
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 80V; 49A; 50W; PG-TDSON-8
Mounting: SMD
Polarisation: unipolar
Case: PG-TDSON-8
On-state resistance: 11.7mΩ
Power dissipation: 50W
Drain current: 49A
Drain-source voltage: 80V
Technology: OptiMOS™ 5
Kind of channel: enhanced
Gate-source voltage: ±20V
Type of transistor: N-MOSFET
Produkt ist nicht verfügbar
| BSC118N10NSGATMA1 |
|
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 71A; 114W; PG-TDSON-8
Mounting: SMD
Polarisation: unipolar
Case: PG-TDSON-8
On-state resistance: 11.8mΩ
Power dissipation: 114W
Drain current: 71A
Drain-source voltage: 100V
Technology: OptiMOS™ 2
Kind of channel: enhanced
Gate-source voltage: ±20V
Type of transistor: N-MOSFET
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 71A; 114W; PG-TDSON-8
Mounting: SMD
Polarisation: unipolar
Case: PG-TDSON-8
On-state resistance: 11.8mΩ
Power dissipation: 114W
Drain current: 71A
Drain-source voltage: 100V
Technology: OptiMOS™ 2
Kind of channel: enhanced
Gate-source voltage: ±20V
Type of transistor: N-MOSFET
Produkt ist nicht verfügbar
| BSC120N03LSGATMA1 |
|
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 33A; 28W; PG-TDSON-8
Type of transistor: N-MOSFET
Technology: OptiMOS™ 3
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 33A
Power dissipation: 28W
Case: PG-TDSON-8
Gate-source voltage: ±20V
On-state resistance: 12mΩ
Mounting: SMD
Kind of channel: enhanced
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 33A; 28W; PG-TDSON-8
Type of transistor: N-MOSFET
Technology: OptiMOS™ 3
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 33A
Power dissipation: 28W
Case: PG-TDSON-8
Gate-source voltage: ±20V
On-state resistance: 12mΩ
Mounting: SMD
Kind of channel: enhanced
Produkt ist nicht verfügbar
| BSC120N03MSGATMA1 |
|
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 36A; 28W; PG-TDSON-8
Type of transistor: N-MOSFET
Technology: OptiMOS™ 3
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 36A
Power dissipation: 28W
Case: PG-TDSON-8
Gate-source voltage: ±20V
On-state resistance: 12mΩ
Mounting: SMD
Kind of channel: enhanced
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 36A; 28W; PG-TDSON-8
Type of transistor: N-MOSFET
Technology: OptiMOS™ 3
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 36A
Power dissipation: 28W
Case: PG-TDSON-8
Gate-source voltage: ±20V
On-state resistance: 12mΩ
Mounting: SMD
Kind of channel: enhanced
Produkt ist nicht verfügbar
| BSC123N08NS3GATMA1 |
|
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 80V; 55A; 66W; PG-TDSON-8
Mounting: SMD
Polarisation: unipolar
Case: PG-TDSON-8
On-state resistance: 12.3mΩ
Power dissipation: 66W
Drain current: 55A
Drain-source voltage: 80V
Technology: OptiMOS™ 3
Kind of channel: enhanced
Gate-source voltage: ±20V
Type of transistor: N-MOSFET
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 80V; 55A; 66W; PG-TDSON-8
Mounting: SMD
Polarisation: unipolar
Case: PG-TDSON-8
On-state resistance: 12.3mΩ
Power dissipation: 66W
Drain current: 55A
Drain-source voltage: 80V
Technology: OptiMOS™ 3
Kind of channel: enhanced
Gate-source voltage: ±20V
Type of transistor: N-MOSFET
auf Bestellung 2887 Stücke:
Lieferzeit 14-21 Tag (e)| Anzahl | Preis ohne MwSt |
|---|---|
| 40+ | 1.82 EUR |
| 48+ | 1.5 EUR |
| 85+ | 0.84 EUR |
| BSC123N10LSGATMA1 |
|
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 71A; 114W; PG-TDSON-8
Mounting: SMD
Polarisation: unipolar
Case: PG-TDSON-8
On-state resistance: 12.3mΩ
Power dissipation: 114W
Drain current: 71A
Drain-source voltage: 100V
Technology: OptiMOS™ 2
Kind of channel: enhanced
Gate-source voltage: ±20V
Type of transistor: N-MOSFET
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 71A; 114W; PG-TDSON-8
Mounting: SMD
Polarisation: unipolar
Case: PG-TDSON-8
On-state resistance: 12.3mΩ
Power dissipation: 114W
Drain current: 71A
Drain-source voltage: 100V
Technology: OptiMOS™ 2
Kind of channel: enhanced
Gate-source voltage: ±20V
Type of transistor: N-MOSFET
Produkt ist nicht verfügbar
| BSC12DN20NS3GATMA1 |
|
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 200V; 11.3A; 50W; PG-TDSON-8
Mounting: SMD
Polarisation: unipolar
Case: PG-TDSON-8
On-state resistance: 0.125Ω
Power dissipation: 50W
Drain current: 11.3A
Drain-source voltage: 200V
Technology: OptiMOS™ 3
Kind of channel: enhanced
Gate-source voltage: ±20V
Type of transistor: N-MOSFET
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 200V; 11.3A; 50W; PG-TDSON-8
Mounting: SMD
Polarisation: unipolar
Case: PG-TDSON-8
On-state resistance: 0.125Ω
Power dissipation: 50W
Drain current: 11.3A
Drain-source voltage: 200V
Technology: OptiMOS™ 3
Kind of channel: enhanced
Gate-source voltage: ±20V
Type of transistor: N-MOSFET
Produkt ist nicht verfügbar
| BSC130P03LSGAUMA1 |
|
Hersteller: INFINEON TECHNOLOGIES
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -30V; -22.5A; 69W; PG-TDSON-8
Mounting: SMD
Technology: OptiMOS™ P
Kind of channel: enhanced
Gate-source voltage: ±25V
Case: PG-TDSON-8
Drain-source voltage: -30V
Drain current: -22.5A
On-state resistance: 13mΩ
Type of transistor: P-MOSFET
Power dissipation: 69W
Polarisation: unipolar
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -30V; -22.5A; 69W; PG-TDSON-8
Mounting: SMD
Technology: OptiMOS™ P
Kind of channel: enhanced
Gate-source voltage: ±25V
Case: PG-TDSON-8
Drain-source voltage: -30V
Drain current: -22.5A
On-state resistance: 13mΩ
Type of transistor: P-MOSFET
Power dissipation: 69W
Polarisation: unipolar
Produkt ist nicht verfügbar
| BSC160N10NS3GATMA1 |
|
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 42A; 60W; PG-TDSON-8
Technology: OptiMOS™ 3
Mounting: SMD
Power dissipation: 60W
Case: PG-TDSON-8
Drain-source voltage: 100V
Drain current: 42A
On-state resistance: 16mΩ
Type of transistor: N-MOSFET
Polarisation: unipolar
Kind of channel: enhanced
Gate-source voltage: ±20V
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 42A; 60W; PG-TDSON-8
Technology: OptiMOS™ 3
Mounting: SMD
Power dissipation: 60W
Case: PG-TDSON-8
Drain-source voltage: 100V
Drain current: 42A
On-state resistance: 16mΩ
Type of transistor: N-MOSFET
Polarisation: unipolar
Kind of channel: enhanced
Gate-source voltage: ±20V
Produkt ist nicht verfügbar
| BSC16DN25NS3GATMA1 |
|
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 250V; 10.9A; 62.5W; PG-TDSON-8
Technology: OptiMOS™ 3
Mounting: SMD
Power dissipation: 62.5W
Case: PG-TDSON-8
Drain-source voltage: 250V
Drain current: 10.9A
On-state resistance: 0.165Ω
Type of transistor: N-MOSFET
Polarisation: unipolar
Kind of channel: enhanced
Gate-source voltage: ±20V
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 250V; 10.9A; 62.5W; PG-TDSON-8
Technology: OptiMOS™ 3
Mounting: SMD
Power dissipation: 62.5W
Case: PG-TDSON-8
Drain-source voltage: 250V
Drain current: 10.9A
On-state resistance: 0.165Ω
Type of transistor: N-MOSFET
Polarisation: unipolar
Kind of channel: enhanced
Gate-source voltage: ±20V
Produkt ist nicht verfügbar
| BSC190N12NS3GATMA1 |
|
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 120V; 44A; 69W; PG-TDSON-8
Mounting: SMD
Polarisation: unipolar
Case: PG-TDSON-8
On-state resistance: 19mΩ
Power dissipation: 69W
Drain current: 44A
Drain-source voltage: 120V
Technology: OptiMOS™ 3
Kind of channel: enhanced
Gate-source voltage: ±20V
Type of transistor: N-MOSFET
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 120V; 44A; 69W; PG-TDSON-8
Mounting: SMD
Polarisation: unipolar
Case: PG-TDSON-8
On-state resistance: 19mΩ
Power dissipation: 69W
Drain current: 44A
Drain-source voltage: 120V
Technology: OptiMOS™ 3
Kind of channel: enhanced
Gate-source voltage: ±20V
Type of transistor: N-MOSFET
Produkt ist nicht verfügbar
| BSC190N15NS3GATMA1 |
|
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 150V; 50A; 125W; PG-TSDSON-8
Mounting: SMD
Polarisation: unipolar
Case: PG-TSDSON-8
On-state resistance: 19mΩ
Power dissipation: 125W
Drain current: 50A
Drain-source voltage: 150V
Technology: OptiMOS™ 3
Kind of channel: enhanced
Gate-source voltage: ±20V
Type of transistor: N-MOSFET
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 150V; 50A; 125W; PG-TSDSON-8
Mounting: SMD
Polarisation: unipolar
Case: PG-TSDSON-8
On-state resistance: 19mΩ
Power dissipation: 125W
Drain current: 50A
Drain-source voltage: 150V
Technology: OptiMOS™ 3
Kind of channel: enhanced
Gate-source voltage: ±20V
Type of transistor: N-MOSFET
auf Bestellung 2154 Stücke:
Lieferzeit 14-21 Tag (e)| Anzahl | Preis ohne MwSt |
|---|---|
| 27+ | 2.72 EUR |
| 30+ | 2.42 EUR |
| 32+ | 2.27 EUR |
| 34+ | 2.12 EUR |
| 100+ | 2.07 EUR |
| BSC196N10NSGATMA1 |
|
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 45A; 78W; PG-TDSON-8
Mounting: SMD
Polarisation: unipolar
Case: PG-TDSON-8
On-state resistance: 19.6mΩ
Power dissipation: 78W
Drain current: 45A
Drain-source voltage: 100V
Technology: OptiMOS™ 2
Kind of channel: enhanced
Gate-source voltage: ±20V
Type of transistor: N-MOSFET
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 45A; 78W; PG-TDSON-8
Mounting: SMD
Polarisation: unipolar
Case: PG-TDSON-8
On-state resistance: 19.6mΩ
Power dissipation: 78W
Drain current: 45A
Drain-source voltage: 100V
Technology: OptiMOS™ 2
Kind of channel: enhanced
Gate-source voltage: ±20V
Type of transistor: N-MOSFET
Produkt ist nicht verfügbar
| BTS3118N |
|
Hersteller: INFINEON TECHNOLOGIES
Category: Power switches - integrated circuits
Description: IC: power switch; low-side; 2.17A; Ch: 1; N-Channel; SMD; SOT223-3
Mounting: SMD
Case: SOT223-3
Technology: HITFET®
Kind of output: N-Channel
Output voltage: 42V
Type of integrated circuit: power switch
Number of channels: 1
On-state resistance: 70mΩ
Output current: 2.17A
Kind of integrated circuit: low-side
Category: Power switches - integrated circuits
Description: IC: power switch; low-side; 2.17A; Ch: 1; N-Channel; SMD; SOT223-3
Mounting: SMD
Case: SOT223-3
Technology: HITFET®
Kind of output: N-Channel
Output voltage: 42V
Type of integrated circuit: power switch
Number of channels: 1
On-state resistance: 70mΩ
Output current: 2.17A
Kind of integrated circuit: low-side
auf Bestellung 3870 Stücke:
Lieferzeit 14-21 Tag (e)| Anzahl | Preis ohne MwSt |
|---|---|
| 35+ | 2.1 EUR |
| 39+ | 1.86 EUR |
| 47+ | 1.53 EUR |
| 50+ | 1.44 EUR |
| BAR6402VH6327XTSA1 |
|
Hersteller: INFINEON TECHNOLOGIES
Category: Diodes - others
Description: Diode: switching; 150V; 100mA; 250mW; SC79; single diode; reel,tape
Type of diode: switching
Max. off-state voltage: 150V
Load current: 0.1A
Power dissipation: 0.25W
Case: SC79
Mounting: SMD
Semiconductor structure: single diode
Features of semiconductor devices: PIN; RF
Max. forward voltage: 1.1V
Kind of package: reel; tape
Category: Diodes - others
Description: Diode: switching; 150V; 100mA; 250mW; SC79; single diode; reel,tape
Type of diode: switching
Max. off-state voltage: 150V
Load current: 0.1A
Power dissipation: 0.25W
Case: SC79
Mounting: SMD
Semiconductor structure: single diode
Features of semiconductor devices: PIN; RF
Max. forward voltage: 1.1V
Kind of package: reel; tape
auf Bestellung 2505 Stücke:
Lieferzeit 14-21 Tag (e)| Anzahl | Preis ohne MwSt |
|---|---|
| 275+ | 0.26 EUR |
| 455+ | 0.16 EUR |
| 500+ | 0.14 EUR |
| 645+ | 0.11 EUR |
| BAR6405WH6327XTSA1 |
|
Hersteller: INFINEON TECHNOLOGIES
Category: Diodes - others
Description: Diode: switching; 150V; 100mA; 250mW; SOT323; Ufmax: 1.1V; reel,tape
Type of diode: switching
Max. off-state voltage: 150V
Load current: 0.1A
Power dissipation: 0.25W
Case: SOT323
Mounting: SMD
Semiconductor structure: common cathode; double
Features of semiconductor devices: PIN; RF
Max. forward voltage: 1.1V
Kind of package: reel; tape
Category: Diodes - others
Description: Diode: switching; 150V; 100mA; 250mW; SOT323; Ufmax: 1.1V; reel,tape
Type of diode: switching
Max. off-state voltage: 150V
Load current: 0.1A
Power dissipation: 0.25W
Case: SOT323
Mounting: SMD
Semiconductor structure: common cathode; double
Features of semiconductor devices: PIN; RF
Max. forward voltage: 1.1V
Kind of package: reel; tape
auf Bestellung 2905 Stücke:
Lieferzeit 14-21 Tag (e)| Anzahl | Preis ohne MwSt |
|---|---|
| 315+ | 0.23 EUR |
| 350+ | 0.21 EUR |
| 395+ | 0.18 EUR |
| 455+ | 0.16 EUR |
| 485+ | 0.15 EUR |
| IRF250P224 |
|
Hersteller: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; StrongIRFET™; unipolar; 250V; 68A; 313W
Type of transistor: N-MOSFET
Technology: StrongIRFET™
Polarisation: unipolar
Drain-source voltage: 250V
Drain current: 68A
Power dissipation: 313W
Case: TO247AC
Gate-source voltage: ±20V
On-state resistance: 12mΩ
Mounting: THT
Gate charge: 203nC
Kind of package: tube
Kind of channel: enhanced
Category: THT N channel transistors
Description: Transistor: N-MOSFET; StrongIRFET™; unipolar; 250V; 68A; 313W
Type of transistor: N-MOSFET
Technology: StrongIRFET™
Polarisation: unipolar
Drain-source voltage: 250V
Drain current: 68A
Power dissipation: 313W
Case: TO247AC
Gate-source voltage: ±20V
On-state resistance: 12mΩ
Mounting: THT
Gate charge: 203nC
Kind of package: tube
Kind of channel: enhanced
Produkt ist nicht verfügbar
| IRF250P225 |
|
Hersteller: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; StrongIRFET™; unipolar; 250V; 49A; 313W
Type of transistor: N-MOSFET
Technology: StrongIRFET™
Polarisation: unipolar
Drain-source voltage: 250V
Drain current: 49A
Power dissipation: 313W
Case: TO247AC
Gate-source voltage: ±20V
On-state resistance: 22mΩ
Mounting: THT
Gate charge: 96nC
Kind of package: tube
Kind of channel: enhanced
Category: THT N channel transistors
Description: Transistor: N-MOSFET; StrongIRFET™; unipolar; 250V; 49A; 313W
Type of transistor: N-MOSFET
Technology: StrongIRFET™
Polarisation: unipolar
Drain-source voltage: 250V
Drain current: 49A
Power dissipation: 313W
Case: TO247AC
Gate-source voltage: ±20V
On-state resistance: 22mΩ
Mounting: THT
Gate charge: 96nC
Kind of package: tube
Kind of channel: enhanced
Produkt ist nicht verfügbar
| IRFZ46NLPBF | |
|
Hersteller: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 55V; 53A; 120W; TO262
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 55V
Drain current: 53A
Power dissipation: 120W
Case: TO262
Gate-source voltage: ±20V
On-state resistance: 16.5mΩ
Mounting: THT
Gate charge: 48nC
Kind of channel: enhanced
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 55V; 53A; 120W; TO262
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 55V
Drain current: 53A
Power dissipation: 120W
Case: TO262
Gate-source voltage: ±20V
On-state resistance: 16.5mΩ
Mounting: THT
Gate charge: 48nC
Kind of channel: enhanced
auf Bestellung 79 Stücke:
Lieferzeit 14-21 Tag (e)| Anzahl | Preis ohne MwSt |
|---|---|
| 46+ | 1.57 EUR |
| 50+ | 1.44 EUR |
| 60+ | 1.2 EUR |
| 69+ | 1.04 EUR |
| 73+ | 0.99 EUR |
| IRFZ46NPBF | |
|
Hersteller: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 55V; 46A; 88W; TO220AB
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 55V
Drain current: 46A
Power dissipation: 88W
Case: TO220AB
Gate-source voltage: ±20V
On-state resistance: 16.5mΩ
Mounting: THT
Gate charge: 48nC
Kind of package: tube
Kind of channel: enhanced
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 55V; 46A; 88W; TO220AB
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 55V
Drain current: 46A
Power dissipation: 88W
Case: TO220AB
Gate-source voltage: ±20V
On-state resistance: 16.5mΩ
Mounting: THT
Gate charge: 48nC
Kind of package: tube
Kind of channel: enhanced
auf Bestellung 227 Stücke:
Lieferzeit 14-21 Tag (e)| Anzahl | Preis ohne MwSt |
|---|---|
| 67+ | 1.07 EUR |
| 80+ | 0.9 EUR |
| 114+ | 0.63 EUR |
| 121+ | 0.59 EUR |
| IR2172SPBF |
|
Hersteller: INFINEON TECHNOLOGIES
Category: MOSFET/IGBT drivers
Description: IC: driver; current sensor; SO8; 20mA; 625mW; 9.5÷20VDC; 600V
Type of integrated circuit: driver
Kind of integrated circuit: current sensor
Case: SO8
Output current: 20mA
Power: 625mW
Supply voltage: 9.5...20V DC
Mounting: SMD
Operating temperature: -40...125°C
Kind of package: tube
Voltage class: 600V
Category: MOSFET/IGBT drivers
Description: IC: driver; current sensor; SO8; 20mA; 625mW; 9.5÷20VDC; 600V
Type of integrated circuit: driver
Kind of integrated circuit: current sensor
Case: SO8
Output current: 20mA
Power: 625mW
Supply voltage: 9.5...20V DC
Mounting: SMD
Operating temperature: -40...125°C
Kind of package: tube
Voltage class: 600V
Produkt ist nicht verfügbar
| IPZ40N04S53R1ATMA1 |
|
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 40A; 71W; PG-TSDSON-8
Technology: OptiMOS™ 5
Mounting: SMD
Case: PG-TSDSON-8
Power dissipation: 71W
Application: automotive industry
Polarisation: unipolar
Kind of channel: enhanced
Gate-source voltage: ±20V
Drain-source voltage: 40V
Drain current: 40A
On-state resistance: 3.1mΩ
Type of transistor: N-MOSFET
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 40A; 71W; PG-TSDSON-8
Technology: OptiMOS™ 5
Mounting: SMD
Case: PG-TSDSON-8
Power dissipation: 71W
Application: automotive industry
Polarisation: unipolar
Kind of channel: enhanced
Gate-source voltage: ±20V
Drain-source voltage: 40V
Drain current: 40A
On-state resistance: 3.1mΩ
Type of transistor: N-MOSFET
Produkt ist nicht verfügbar
| IPZ40N04S5-5R4 |
|
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 40A; 48W; PG-TSDSON-8
Technology: OptiMOS™ 5
Mounting: SMD
Case: PG-TSDSON-8
Power dissipation: 48W
Application: automotive industry
Polarisation: unipolar
Gate charge: 23nC
Kind of channel: enhanced
Gate-source voltage: ±20V
Drain-source voltage: 40V
Drain current: 40A
On-state resistance: 6.3mΩ
Type of transistor: N-MOSFET
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 40A; 48W; PG-TSDSON-8
Technology: OptiMOS™ 5
Mounting: SMD
Case: PG-TSDSON-8
Power dissipation: 48W
Application: automotive industry
Polarisation: unipolar
Gate charge: 23nC
Kind of channel: enhanced
Gate-source voltage: ±20V
Drain-source voltage: 40V
Drain current: 40A
On-state resistance: 6.3mΩ
Type of transistor: N-MOSFET
Produkt ist nicht verfügbar
| IPZ40N04S5-8R4 |
|
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 40A; 34W; PG-TSDSON-8
Technology: OptiMOS™ 5
Mounting: SMD
Case: PG-TSDSON-8
Power dissipation: 34W
Application: automotive industry
Polarisation: unipolar
Gate charge: 13.7nC
Kind of channel: enhanced
Gate-source voltage: ±20V
Drain-source voltage: 40V
Drain current: 40A
On-state resistance: 9.9mΩ
Type of transistor: N-MOSFET
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 40A; 34W; PG-TSDSON-8
Technology: OptiMOS™ 5
Mounting: SMD
Case: PG-TSDSON-8
Power dissipation: 34W
Application: automotive industry
Polarisation: unipolar
Gate charge: 13.7nC
Kind of channel: enhanced
Gate-source voltage: ±20V
Drain-source voltage: 40V
Drain current: 40A
On-state resistance: 9.9mΩ
Type of transistor: N-MOSFET
Produkt ist nicht verfügbar
| IPZ40N04S5L-2R8 |
|
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 40A; 71W; PG-TSDSON-8
Technology: OptiMOS™ 5
Mounting: SMD
Case: PG-TSDSON-8
Power dissipation: 71W
Application: automotive industry
Polarisation: unipolar
Gate charge: 52nC
Kind of channel: enhanced
Gate-source voltage: ±16V
Drain-source voltage: 40V
Drain current: 40A
On-state resistance: 3.8mΩ
Type of transistor: N-MOSFET
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 40A; 71W; PG-TSDSON-8
Technology: OptiMOS™ 5
Mounting: SMD
Case: PG-TSDSON-8
Power dissipation: 71W
Application: automotive industry
Polarisation: unipolar
Gate charge: 52nC
Kind of channel: enhanced
Gate-source voltage: ±16V
Drain-source voltage: 40V
Drain current: 40A
On-state resistance: 3.8mΩ
Type of transistor: N-MOSFET
Produkt ist nicht verfügbar
| IPZ40N04S5L-4R8 |
|
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 40A; 48W; PG-TSDSON-8
Technology: OptiMOS™ 5
Mounting: SMD
Case: PG-TSDSON-8
Power dissipation: 48W
Application: automotive industry
Polarisation: unipolar
Gate charge: 29nC
Kind of channel: enhanced
Gate-source voltage: ±16V
Drain-source voltage: 40V
Drain current: 40A
On-state resistance: 6.7mΩ
Type of transistor: N-MOSFET
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 40A; 48W; PG-TSDSON-8
Technology: OptiMOS™ 5
Mounting: SMD
Case: PG-TSDSON-8
Power dissipation: 48W
Application: automotive industry
Polarisation: unipolar
Gate charge: 29nC
Kind of channel: enhanced
Gate-source voltage: ±16V
Drain-source voltage: 40V
Drain current: 40A
On-state resistance: 6.7mΩ
Type of transistor: N-MOSFET
Produkt ist nicht verfügbar
| IPZ40N04S5L-7R4 |
|
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 40A; 34W; PG-TSDSON-8
Technology: OptiMOS™ 5
Mounting: SMD
Case: PG-TSDSON-8
Power dissipation: 34W
Application: automotive industry
Polarisation: unipolar
Gate charge: 17nC
Kind of channel: enhanced
Gate-source voltage: ±16V
Drain-source voltage: 40V
Drain current: 40A
On-state resistance: 10.7mΩ
Type of transistor: N-MOSFET
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 40A; 34W; PG-TSDSON-8
Technology: OptiMOS™ 5
Mounting: SMD
Case: PG-TSDSON-8
Power dissipation: 34W
Application: automotive industry
Polarisation: unipolar
Gate charge: 17nC
Kind of channel: enhanced
Gate-source voltage: ±16V
Drain-source voltage: 40V
Drain current: 40A
On-state resistance: 10.7mΩ
Type of transistor: N-MOSFET
Produkt ist nicht verfügbar
| BSB165N15NZ3GXUMA1 |
|
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 150V; 45A; 78W
Drain-source voltage: 150V
Drain current: 45A
On-state resistance: 16.5mΩ
Type of transistor: N-MOSFET
Power dissipation: 78W
Polarisation: unipolar
Technology: OptiMOS™
Kind of channel: enhanced
Gate-source voltage: ±20V
Mounting: SMD
Case: CanPAK™ MZ; MG-WDSON-2
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 150V; 45A; 78W
Drain-source voltage: 150V
Drain current: 45A
On-state resistance: 16.5mΩ
Type of transistor: N-MOSFET
Power dissipation: 78W
Polarisation: unipolar
Technology: OptiMOS™
Kind of channel: enhanced
Gate-source voltage: ±20V
Mounting: SMD
Case: CanPAK™ MZ; MG-WDSON-2
Produkt ist nicht verfügbar
| BSB015N04NX3GXUMA1 |
|
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 180A; 89W
Type of transistor: N-MOSFET
Technology: OptiMOS™
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 180A
Power dissipation: 89W
Case: CanPAK™ MX; MG-WDSON-2
Gate-source voltage: ±20V
On-state resistance: 1.5mΩ
Mounting: SMD
Kind of channel: enhanced
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 180A; 89W
Type of transistor: N-MOSFET
Technology: OptiMOS™
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 180A
Power dissipation: 89W
Case: CanPAK™ MX; MG-WDSON-2
Gate-source voltage: ±20V
On-state resistance: 1.5mΩ
Mounting: SMD
Kind of channel: enhanced
Produkt ist nicht verfügbar
| IPB015N04LGATMA1 |
|
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 120A; 250W; PG-TO263-3
Type of transistor: N-MOSFET
Technology: OptiMOS™ 3
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 120A
Power dissipation: 250W
Case: PG-TO263-3
Gate-source voltage: ±20V
On-state resistance: 1.5mΩ
Mounting: SMD
Gate charge: 260nC
Kind of channel: enhanced
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 120A; 250W; PG-TO263-3
Type of transistor: N-MOSFET
Technology: OptiMOS™ 3
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 120A
Power dissipation: 250W
Case: PG-TO263-3
Gate-source voltage: ±20V
On-state resistance: 1.5mΩ
Mounting: SMD
Gate charge: 260nC
Kind of channel: enhanced
Produkt ist nicht verfügbar
| IPB015N04NGATMA1 |
|
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 120A; 250W; PG-TO263-3
Type of transistor: N-MOSFET
Technology: OptiMOS™ 3
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 120A
Power dissipation: 250W
Case: PG-TO263-3
Gate-source voltage: ±20V
On-state resistance: 1.5mΩ
Mounting: SMD
Kind of channel: enhanced
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 120A; 250W; PG-TO263-3
Type of transistor: N-MOSFET
Technology: OptiMOS™ 3
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 120A
Power dissipation: 250W
Case: PG-TO263-3
Gate-source voltage: ±20V
On-state resistance: 1.5mΩ
Mounting: SMD
Kind of channel: enhanced
Produkt ist nicht verfügbar
| IPP015N04NGXKSA1 |
|
Hersteller: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 120A; 250W; PG-TO220-3
Type of transistor: N-MOSFET
Technology: OptiMOS™ 3
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 120A
Power dissipation: 250W
Case: PG-TO220-3
Gate-source voltage: ±20V
On-state resistance: 1.5mΩ
Mounting: THT
Kind of package: tube
Kind of channel: enhanced
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 120A; 250W; PG-TO220-3
Type of transistor: N-MOSFET
Technology: OptiMOS™ 3
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 120A
Power dissipation: 250W
Case: PG-TO220-3
Gate-source voltage: ±20V
On-state resistance: 1.5mΩ
Mounting: THT
Kind of package: tube
Kind of channel: enhanced
auf Bestellung 28 Stücke:
Lieferzeit 14-21 Tag (e)| Anzahl | Preis ohne MwSt |
|---|---|
| 15+ | 5.08 EUR |
| 19+ | 3.89 EUR |
| 20+ | 3.68 EUR |
| IRFI131ONPBF |
|
Hersteller: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 22A; 45W; TO220FP
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 22A
Power dissipation: 45W
Case: TO220FP
Gate-source voltage: ±20V
On-state resistance: 36mΩ
Mounting: THT
Gate charge: 80nC
Kind of package: tube
Kind of channel: enhanced
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 22A; 45W; TO220FP
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 22A
Power dissipation: 45W
Case: TO220FP
Gate-source voltage: ±20V
On-state resistance: 36mΩ
Mounting: THT
Gate charge: 80nC
Kind of package: tube
Kind of channel: enhanced
auf Bestellung 87 Stücke:
Lieferzeit 14-21 Tag (e)| Anzahl | Preis ohne MwSt |
|---|---|
| 31+ | 2.35 EUR |
| 35+ | 2.1 EUR |
| 41+ | 1.76 EUR |
| 44+ | 1.66 EUR |
| IRFI4110GPBF |
|
Hersteller: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 72A; 61W; TO220FP
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 72A
Power dissipation: 61W
Case: TO220FP
Mounting: THT
Kind of package: tube
Kind of channel: enhanced
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 72A; 61W; TO220FP
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 72A
Power dissipation: 61W
Case: TO220FP
Mounting: THT
Kind of package: tube
Kind of channel: enhanced
auf Bestellung 65 Stücke:
Lieferzeit 14-21 Tag (e)| Anzahl | Preis ohne MwSt |
|---|---|
| 14+ | 5.45 EUR |
| 15+ | 4.8 EUR |
| 21+ | 3.53 EUR |
| 22+ | 3.35 EUR |
| IRFI4229PBF |
|
Hersteller: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 250V; 19A; 46W; TO220FP
Kind of package: tube
Drain-source voltage: 250V
Drain current: 19A
Type of transistor: N-MOSFET
Power dissipation: 46W
Polarisation: unipolar
Technology: HEXFET®
Kind of channel: enhanced
Mounting: THT
Case: TO220FP
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 250V; 19A; 46W; TO220FP
Kind of package: tube
Drain-source voltage: 250V
Drain current: 19A
Type of transistor: N-MOSFET
Power dissipation: 46W
Polarisation: unipolar
Technology: HEXFET®
Kind of channel: enhanced
Mounting: THT
Case: TO220FP
Produkt ist nicht verfügbar
| IRFI4321PBF |
|
Hersteller: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 150V; 34A; 46W; TO220FP
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 150V
Drain current: 34A
Power dissipation: 46W
Case: TO220FP
Mounting: THT
Kind of package: tube
Kind of channel: enhanced
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 150V; 34A; 46W; TO220FP
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 150V
Drain current: 34A
Power dissipation: 46W
Case: TO220FP
Mounting: THT
Kind of package: tube
Kind of channel: enhanced
auf Bestellung 83 Stücke:
Lieferzeit 14-21 Tag (e)| Anzahl | Preis ohne MwSt |
|---|---|
| 16+ | 4.48 EUR |
| 18+ | 4 EUR |
| 24+ | 3.07 EUR |
| 25+ | 2.92 EUR |
| IRFI4410ZPBF |
|
Hersteller: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 30A; 47W; TO220FP
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 30A
Power dissipation: 47W
Case: TO220FP
Gate-source voltage: ±30V
On-state resistance: 9.3mΩ
Mounting: THT
Gate charge: 81nC
Kind of package: tube
Kind of channel: enhanced
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 30A; 47W; TO220FP
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 30A
Power dissipation: 47W
Case: TO220FP
Gate-source voltage: ±30V
On-state resistance: 9.3mΩ
Mounting: THT
Gate charge: 81nC
Kind of package: tube
Kind of channel: enhanced
auf Bestellung 1142 Stücke:
Lieferzeit 14-21 Tag (e)| Anzahl | Preis ohne MwSt |
|---|---|
| 25+ | 2.87 EUR |
| 28+ | 2.57 EUR |
| 31+ | 2.32 EUR |
| 33+ | 2.23 EUR |
| 50+ | 2.14 EUR |
| IRFI530NPBF |
|
Hersteller: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 11A; 33W; TO220FP
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 11A
Power dissipation: 33W
Case: TO220FP
Gate-source voltage: ±20V
On-state resistance: 0.11Ω
Mounting: THT
Gate charge: 29.3nC
Kind of package: tube
Kind of channel: enhanced
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 11A; 33W; TO220FP
Type of transistor: N-MOSFET
Technology: HEXFET®
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 11A
Power dissipation: 33W
Case: TO220FP
Gate-source voltage: ±20V
On-state resistance: 0.11Ω
Mounting: THT
Gate charge: 29.3nC
Kind of package: tube
Kind of channel: enhanced
auf Bestellung 100 Stücke:
Lieferzeit 14-21 Tag (e)| Anzahl | Preis ohne MwSt |
|---|---|
| 52+ | 1.39 EUR |
| 59+ | 1.22 EUR |
| 73+ | 0.99 EUR |
| 82+ | 0.87 EUR |
| 87+ | 0.83 EUR |
| IRFI540NPBF |
|
Hersteller: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 18A; 42W; TO220FP
Kind of package: tube
Mounting: THT
Power dissipation: 42W
Polarisation: unipolar
Gate charge: 62.7nC
Technology: HEXFET®
Kind of channel: enhanced
Gate-source voltage: ±20V
Case: TO220FP
Drain-source voltage: 100V
Drain current: 18A
On-state resistance: 52mΩ
Type of transistor: N-MOSFET
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 18A; 42W; TO220FP
Kind of package: tube
Mounting: THT
Power dissipation: 42W
Polarisation: unipolar
Gate charge: 62.7nC
Technology: HEXFET®
Kind of channel: enhanced
Gate-source voltage: ±20V
Case: TO220FP
Drain-source voltage: 100V
Drain current: 18A
On-state resistance: 52mΩ
Type of transistor: N-MOSFET
Produkt ist nicht verfügbar
| IPB033N10N5LF |
|
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 108A; 179W; PG-TO263-3
Type of transistor: N-MOSFET
Technology: OptiMOS™ 5
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 108A
Power dissipation: 179W
Case: PG-TO263-3
Gate-source voltage: ±20V
On-state resistance: 3.3mΩ
Mounting: SMD
Kind of channel: enhanced
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 108A; 179W; PG-TO263-3
Type of transistor: N-MOSFET
Technology: OptiMOS™ 5
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 108A
Power dissipation: 179W
Case: PG-TO263-3
Gate-source voltage: ±20V
On-state resistance: 3.3mΩ
Mounting: SMD
Kind of channel: enhanced
Produkt ist nicht verfügbar
| BGSA14GN10E6327XTSA1 |
|
Hersteller: INFINEON TECHNOLOGIES
Category: Analog multiplexers and switches
Description: IC: RF switch; SP4T; Ch: 4; TSNP10; 1.8÷3.6VDC; 0.1÷5GHz
Type of integrated circuit: RF switch
Case: TSNP10
Mounting: SMD
Number of channels: 4
Application: telecommunication
Supply voltage: 1.8...3.6V DC
Bandwidth: 0.1...5GHz
Output configuration: SP4T
Category: Analog multiplexers and switches
Description: IC: RF switch; SP4T; Ch: 4; TSNP10; 1.8÷3.6VDC; 0.1÷5GHz
Type of integrated circuit: RF switch
Case: TSNP10
Mounting: SMD
Number of channels: 4
Application: telecommunication
Supply voltage: 1.8...3.6V DC
Bandwidth: 0.1...5GHz
Output configuration: SP4T
Produkt ist nicht verfügbar
| IR2108SPBF |
|
Hersteller: INFINEON TECHNOLOGIES
Category: MOSFET/IGBT drivers
Description: IC: driver; MOSFET half-bridge; high-/low-side,gate driver; SO8
Type of integrated circuit: driver
Topology: MOSFET half-bridge
Kind of integrated circuit: gate driver; high-/low-side
Case: SO8
Output current: -350...200mA
Power: 625mW
Number of channels: 2
Supply voltage: 10...20V DC
Integrated circuit features: charge pump; dead time; integrated bootstrap functionality
Mounting: SMD
Operating temperature: -40...125°C
Kind of package: tube
Voltage class: 600V
Turn-on time: 220ns
Turn-off time: 200ns
Category: MOSFET/IGBT drivers
Description: IC: driver; MOSFET half-bridge; high-/low-side,gate driver; SO8
Type of integrated circuit: driver
Topology: MOSFET half-bridge
Kind of integrated circuit: gate driver; high-/low-side
Case: SO8
Output current: -350...200mA
Power: 625mW
Number of channels: 2
Supply voltage: 10...20V DC
Integrated circuit features: charge pump; dead time; integrated bootstrap functionality
Mounting: SMD
Operating temperature: -40...125°C
Kind of package: tube
Voltage class: 600V
Turn-on time: 220ns
Turn-off time: 200ns
auf Bestellung 1 Stücke:
Lieferzeit 14-21 Tag (e)| Anzahl | Preis ohne MwSt |
|---|---|
| 1+ | 71.5 EUR |
| BSO613SPVGXUMA1 |
|
Hersteller: INFINEON TECHNOLOGIES
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -60V; -3.44A; Idm: -13.8A; 2.5W; SO8
Type of transistor: P-MOSFET
Technology: SIPMOS™
Polarisation: unipolar
Drain-source voltage: -60V
Drain current: -3.44A
Pulsed drain current: -13.8A
Power dissipation: 2.5W
Case: SO8
Gate-source voltage: ±20V
On-state resistance: 0.13Ω
Mounting: SMD
Kind of channel: enhanced
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -60V; -3.44A; Idm: -13.8A; 2.5W; SO8
Type of transistor: P-MOSFET
Technology: SIPMOS™
Polarisation: unipolar
Drain-source voltage: -60V
Drain current: -3.44A
Pulsed drain current: -13.8A
Power dissipation: 2.5W
Case: SO8
Gate-source voltage: ±20V
On-state resistance: 0.13Ω
Mounting: SMD
Kind of channel: enhanced
Produkt ist nicht verfügbar
| BSF134N10NJ3GXUMA1 |
|
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 40A; 28W
Mounting: SMD
Case: CanPAK™ SJ; MG-WDSON-2
Power dissipation: 28W
Technology: OptiMOS™
Polarisation: unipolar
Kind of channel: enhanced
Gate-source voltage: ±20V
Drain-source voltage: 100V
Drain current: 40A
On-state resistance: 13.4mΩ
Type of transistor: N-MOSFET
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 40A; 28W
Mounting: SMD
Case: CanPAK™ SJ; MG-WDSON-2
Power dissipation: 28W
Technology: OptiMOS™
Polarisation: unipolar
Kind of channel: enhanced
Gate-source voltage: ±20V
Drain-source voltage: 100V
Drain current: 40A
On-state resistance: 13.4mΩ
Type of transistor: N-MOSFET
Produkt ist nicht verfügbar
| SN7002NH6433XTMA1 |
|
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 0.16A; 0.36W; SOT23
Type of transistor: N-MOSFET
Technology: SIPMOS™
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 0.16A
Power dissipation: 0.36W
Case: SOT23
Gate-source voltage: ±20V
On-state resistance: 5Ω
Mounting: SMD
Kind of channel: enhanced
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 0.16A; 0.36W; SOT23
Type of transistor: N-MOSFET
Technology: SIPMOS™
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 0.16A
Power dissipation: 0.36W
Case: SOT23
Gate-source voltage: ±20V
On-state resistance: 5Ω
Mounting: SMD
Kind of channel: enhanced
auf Bestellung 7340 Stücke:
Lieferzeit 14-21 Tag (e)| Anzahl | Preis ohne MwSt |
|---|---|
| 760+ | 0.095 EUR |
| 855+ | 0.084 EUR |
| 1040+ | 0.069 EUR |
| 1100+ | 0.065 EUR |
| BSZ105N04NSGATMA1 |
|
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 29A; 35W; PG-TSDSON-8
Drain-source voltage: 40V
Drain current: 29A
On-state resistance: 10.5mΩ
Type of transistor: N-MOSFET
Power dissipation: 35W
Polarisation: unipolar
Case: PG-TSDSON-8
Gate charge: 13nC
Mounting: SMD
Technology: OptiMOS™ 3
Kind of channel: enhanced
Gate-source voltage: ±20V
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 29A; 35W; PG-TSDSON-8
Drain-source voltage: 40V
Drain current: 29A
On-state resistance: 10.5mΩ
Type of transistor: N-MOSFET
Power dissipation: 35W
Polarisation: unipolar
Case: PG-TSDSON-8
Gate charge: 13nC
Mounting: SMD
Technology: OptiMOS™ 3
Kind of channel: enhanced
Gate-source voltage: ±20V
Produkt ist nicht verfügbar
| IPD031N03LGATMA1 |
|
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 79A; 94W; PG-TO252-3
Power dissipation: 94W
Case: PG-TO252-3
Mounting: SMD
Polarisation: unipolar
Technology: OptiMOS™ 3
Kind of channel: enhanced
Gate-source voltage: ±20V
Drain-source voltage: 30V
Drain current: 79A
On-state resistance: 3.1mΩ
Type of transistor: N-MOSFET
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 79A; 94W; PG-TO252-3
Power dissipation: 94W
Case: PG-TO252-3
Mounting: SMD
Polarisation: unipolar
Technology: OptiMOS™ 3
Kind of channel: enhanced
Gate-source voltage: ±20V
Drain-source voltage: 30V
Drain current: 79A
On-state resistance: 3.1mΩ
Type of transistor: N-MOSFET
auf Bestellung 2610 Stücke:
Lieferzeit 14-21 Tag (e)| Anzahl | Preis ohne MwSt |
|---|---|
| 56+ | 1.29 EUR |
| 61+ | 1.17 EUR |
| 81+ | 0.88 EUR |
| 86+ | 0.83 EUR |
| IPD034N06N3GATMA1 |
|
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 100A; 167W; PG-TO252-3
Mounting: SMD
Case: PG-TO252-3
Polarisation: unipolar
Technology: OptiMOS™ 3
Kind of channel: enhanced
Gate-source voltage: ±20V
Drain-source voltage: 60V
Drain current: 100A
On-state resistance: 3.4mΩ
Type of transistor: N-MOSFET
Power dissipation: 167W
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 100A; 167W; PG-TO252-3
Mounting: SMD
Case: PG-TO252-3
Polarisation: unipolar
Technology: OptiMOS™ 3
Kind of channel: enhanced
Gate-source voltage: ±20V
Drain-source voltage: 60V
Drain current: 100A
On-state resistance: 3.4mΩ
Type of transistor: N-MOSFET
Power dissipation: 167W
auf Bestellung 1880 Stücke:
Lieferzeit 14-21 Tag (e)| Anzahl | Preis ohne MwSt |
|---|---|
| 34+ | 2.13 EUR |
| 40+ | 1.79 EUR |
| 51+ | 1.42 EUR |
| 54+ | 1.33 EUR |
| 500+ | 1.29 EUR |
| IPD038N06N3GATMA1 |
|
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 90A; 188W; PG-TO252-3
Power dissipation: 188W
Case: PG-TO252-3
Mounting: SMD
Polarisation: unipolar
Technology: OptiMOS™ 3
Kind of channel: enhanced
Gate-source voltage: ±20V
Drain-source voltage: 60V
Drain current: 90A
On-state resistance: 3.8mΩ
Type of transistor: N-MOSFET
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 90A; 188W; PG-TO252-3
Power dissipation: 188W
Case: PG-TO252-3
Mounting: SMD
Polarisation: unipolar
Technology: OptiMOS™ 3
Kind of channel: enhanced
Gate-source voltage: ±20V
Drain-source voltage: 60V
Drain current: 90A
On-state resistance: 3.8mΩ
Type of transistor: N-MOSFET
Produkt ist nicht verfügbar
| IPD075N03LGATMA1 |
|
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 35A; 47W; PG-TO252-3
Power dissipation: 47W
Case: PG-TO252-3
Mounting: SMD
Polarisation: unipolar
Technology: OptiMOS™ 3
Kind of channel: enhanced
Gate-source voltage: ±20V
Drain-source voltage: 30V
Drain current: 35A
On-state resistance: 7.5mΩ
Type of transistor: N-MOSFET
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 35A; 47W; PG-TO252-3
Power dissipation: 47W
Case: PG-TO252-3
Mounting: SMD
Polarisation: unipolar
Technology: OptiMOS™ 3
Kind of channel: enhanced
Gate-source voltage: ±20V
Drain-source voltage: 30V
Drain current: 35A
On-state resistance: 7.5mΩ
Type of transistor: N-MOSFET
auf Bestellung 2491 Stücke:
Lieferzeit 14-21 Tag (e)| Anzahl | Preis ohne MwSt |
|---|---|
| 53+ | 1.36 EUR |
| 88+ | 0.82 EUR |
| 109+ | 0.66 EUR |
| 126+ | 0.57 EUR |
| 133+ | 0.54 EUR |
| 1000+ | 0.53 EUR |