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CY22393ZXC-529 CY22393ZXC-529 Infineon Technologies CY22393-95,CY223931.pdf Description: IC CLOCK GEN PROG 16TSSOP
DigiKey Programmable: Not Verified
Part Status: Obsolete
Packaging: Tube
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CY22393ZXC-529 CY22393ZXC-529 Infineon Technologies CY22393-95,CY223931.pdf Description: IC CLOCK GEN PROG 16TSSOP
Packaging: Tube
DigiKey Programmable: Not Verified
Part Status: Obsolete
Produkt ist nicht verfügbar
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CY22393ZXI-510 CY22393ZXI-510 Infineon Technologies CY22393-95,CY223931.pdf Description: IC CLOCK GEN PROG 16TSSOP
DigiKey Programmable: Not Verified
Part Status: Obsolete
Packaging: Tube
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CY22393ZXI-510 CY22393ZXI-510 Infineon Technologies CY22393-95,CY223931.pdf Description: IC CLOCK GEN PROG 16TSSOP
DigiKey Programmable: Not Verified
Part Status: Obsolete
Packaging: Tube
Produkt ist nicht verfügbar
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SLS32AIA020X2USON10XTMA4 SLS32AIA020X2USON10XTMA4 Infineon Technologies Infineon-OPTIGA%20TRUST%20X%20SLS%2032AIA-DS-v02_60-EN.pdf?fileId=5546d462602a9dc801606f1c2ebb7fe9 Description: OPTIGA TRUST
DigiKey Programmable: Not Verified
Part Status: Active
Supplier Device Package: PG-USON-10-2
Core Processor: 16-Bit
Applications: Embedded Security Trusted Computing
Program Memory Type: NVM (10kB)
Voltage - Supply: 1.62V ~ 5.5V
Operating Temperature: -40°C ~ 105°C (TA)
Interface: I2C
Mounting Type: Surface Mount
Package / Case: 10-UFDFN Exposed Pad
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar
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SI4420DY SI4420DY Infineon Technologies si4420dypbf.pdf?fileId=5546d462533600a401535684734c2981 Description: MOSFET N-CH 30V 12.5A 8SO
Packaging: Tube
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 12.5A (Ta)
Rds On (Max) @ Id, Vgs: 9mOhm @ 12.5A, 10V
Power Dissipation (Max): 2.5W (Ta)
Vgs(th) (Max) @ Id: 1V @ 250µA
Supplier Device Package: 8-SO
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 78 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2240 pF @ 15 V
Produkt ist nicht verfügbar
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CY62126EV30LL-45BVXI CY62126EV30LL-45BVXI Infineon Technologies CY62126EV30_RevH.pdf Description: IC SRAM 1MBIT PARALLEL 48VFBGA
Memory Interface: Parallel
Write Cycle Time - Word, Page: 45ns
Part Status: Active
Supplier Device Package: 48-VFBGA (6x8)
Memory Format: SRAM
Technology: SRAM - Asynchronous
Voltage - Supply: 2.2V ~ 3.6V
Operating Temperature: -40°C ~ 85°C (TA)
Memory Type: Volatile
Memory Size: 1Mbit
Mounting Type: Surface Mount
Package / Case: 48-VFBGA
Packaging: Tray
DigiKey Programmable: Not Verified
Memory Organization: 64K x 16
Access Time: 45 ns
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10+5.18 EUR
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40+4.82 EUR
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230+4.4 EUR
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FS30R06W1E3BOMA1 FS30R06W1E3BOMA1 Infineon Technologies Infineon-FS30R06W1E3-DS-v02_01-en_de.pdf?fileId=db3a304313b8b5a60113cecd4c3102c1 Description: IGBT MODULE 600V 60A 150W
Packaging: Tray
Package / Case: Module
Mounting Type: Chassis Mount
Input: Standard
Configuration: Three Phase Inverter
Operating Temperature: -40°C ~ 150°C (TJ)
Vce(on) (Max) @ Vge, Ic: 2V @ 15V, 30A
NTC Thermistor: Yes
Supplier Device Package: Module
IGBT Type: Trench Field Stop
Part Status: Active
Current - Collector (Ic) (Max): 60 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Power - Max: 150 W
Current - Collector Cutoff (Max): 1 mA
Input Capacitance (Cies) @ Vce: 1.65 nF @ 25 V
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FS20R06W1E3BOMA1 FS20R06W1E3BOMA1 Infineon Technologies Infineon-FS20R06W1E3-DS-v02_01-en_de.pdf?fileId=db3a3043139a1bac0113b50a7b000552 Description: IGBT MODULE 600V 35A 135W
Packaging: Tray
Package / Case: Module
Mounting Type: Chassis Mount
Input: Standard
Configuration: Three Phase Inverter
Operating Temperature: -40°C ~ 150°C
Vce(on) (Max) @ Vge, Ic: 2V @ 15V, 20A
NTC Thermistor: Yes
Supplier Device Package: Module
IGBT Type: Trench Field Stop
Part Status: Active
Current - Collector (Ic) (Max): 35 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Power - Max: 135 W
Current - Collector Cutoff (Max): 1 mA
Input Capacitance (Cies) @ Vce: 1.1 nF @ 25 V
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FS35R12W1T4BOMA1 FS35R12W1T4BOMA1 Infineon Technologies Infineon-FS35R12W1T4-DS-v02_01-en_de.pdf?fileId=db3a3043139a1bac0113b4be783c0543 Description: IGBT MOD 1200V 65A 225W MOD
Packaging: Tray
Package / Case: Module
Mounting Type: Chassis Mount
Input: Standard
Configuration: Three Phase Inverter
Operating Temperature: -40°C ~ 150°C (TJ)
Vce(on) (Max) @ Vge, Ic: 2.25V @ 15V, 35A
NTC Thermistor: Yes
Supplier Device Package: Module
IGBT Type: Trench Field Stop
Part Status: Active
Current - Collector (Ic) (Max): 65 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Power - Max: 225 W
Current - Collector Cutoff (Max): 1 mA
Input Capacitance (Cies) @ Vce: 2 nF @ 25 V
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FS50R12KT4PB11BPSA1 FS50R12KT4PB11BPSA1 Infineon Technologies Infineon-FS50R12KT4P_B11-DS-v03_00-EN.pdf?fileId=5546d4625d5945ed015dcbe0274c7cb4 Description: IGBT MODULE 1200V 100A MODULE
Packaging: Tray
Package / Case: Module
Mounting Type: Chassis Mount
Input: Standard
Configuration: Three Phase Inverter
Operating Temperature: -40°C ~ 150°C
Vce(on) (Max) @ Vge, Ic: 2.15V @ 15V, 50A
NTC Thermistor: Yes
Supplier Device Package: Module
IGBT Type: Trench Field Stop
Part Status: Active
Current - Collector (Ic) (Max): 100 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Power - Max: 20 mW
Current - Collector Cutoff (Max): 1 mA
Input Capacitance (Cies) @ Vce: 2.8 nF @ 25 V
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FS300R17OE4B81BPSA1 FS300R17OE4B81BPSA1 Infineon Technologies Infineon-FS300R17OE4_B81-DataSheet-v03_00-EN.pdf?fileId=5546d4627255dbad01726029d02d6c72 Description: MEDIUM POWER ECONO
Packaging: Bulk
Package / Case: Module
Mounting Type: Chassis Mount
Input: Standard
Configuration: Three Phase Inverter
Operating Temperature: -40°C ~ 150°C (TJ)
Vce(on) (Max) @ Vge, Ic: 2.3V @ 15V, 300A
NTC Thermistor: Yes
Supplier Device Package: AG-ECONOPP
IGBT Type: Trench Field Stop
Part Status: Active
Current - Collector (Ic) (Max): 300 A
Voltage - Collector Emitter Breakdown (Max): 1700 V
Power - Max: 20 mW
Current - Collector Cutoff (Max): 3 mA
Input Capacitance (Cies) @ Vce: 24.3 nF @ 25 V
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FP75R12N2T4B86BPSA1 Infineon Technologies infineon-fp75r12n2t4-ds-ja.pdf?fileId=5546d462689a790c016939d8a1586b47 Description: IGBT MOD 1200V 75A AG-ECONO2B
Packaging: Tray
Package / Case: Module
Mounting Type: Chassis Mount
Input: Three Phase Bridge Rectifier
Configuration: Three Phase Inverter with Brake
Operating Temperature: -40°C ~ 150°C (TJ)
Vce(on) (Max) @ Vge, Ic: 2.15V @ 15V, 75A
NTC Thermistor: Yes
Supplier Device Package: AG-ECONO2B
IGBT Type: Trench Field Stop
Part Status: Active
Current - Collector (Ic) (Max): 75 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Power - Max: 20 mW
Current - Collector Cutoff (Max): 1 mA
Input Capacitance (Cies) @ Vce: 4.3 nF @ 25 V
Produkt ist nicht verfügbar
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FP75R17N3E4B20BPSA1 FP75R17N3E4B20BPSA1 Infineon Technologies infineon-fs75r17w2e4p-b11-datasheet-en.pdf Description: IGBT MODULE 1700V 150A AG-ECONO3
Packaging: Tray
Package / Case: Module
Mounting Type: Chassis Mount
Input: Three Phase Bridge Rectifier
Configuration: Three Phase Inverter
Operating Temperature: -40°C ~ 150°C (TJ)
Vce(on) (Max) @ Vge, Ic: 2.3V @ 15V, 75A
NTC Thermistor: Yes
Supplier Device Package: AG-ECONO3
IGBT Type: Trench Field Stop
Part Status: Active
Current - Collector (Ic) (Max): 150 A
Voltage - Collector Emitter Breakdown (Max): 1700 V
Power - Max: 555 W
Current - Collector Cutoff (Max): 1 mA
Input Capacitance (Cies) @ Vce: 6.8 nF @ 25 V
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FS15R12YT3BOMA1 Infineon Technologies Description: IGBT MOD 1200V 25A 110W MOD
Packaging: Tray
Package / Case: Module
Mounting Type: Chassis Mount
Input: Standard
Configuration: Full Bridge Inverter
Operating Temperature: -40°C ~ 125°C
Vce(on) (Max) @ Vge, Ic: 2.15V @ 15V, 15A
NTC Thermistor: Yes
Supplier Device Package: Module
Part Status: Obsolete
Current - Collector (Ic) (Max): 25 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Power - Max: 110 W
Current - Collector Cutoff (Max): 5 mA
Input Capacitance (Cies) @ Vce: 1.1 nF @ 25 V
Produkt ist nicht verfügbar
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S6E1C32D0AGV20000 S6E1C32D0AGV20000 Infineon Technologies Infineon-S6E1C32D0AGN20050-DataSheet-v01_00-EN.pdf?fileId=8ac78c8c81ae03fc0181ec33e75c2c49 Description: IC MCU 32BIT 128KB FLASH 64LQFP
DigiKey Programmable: Not Verified
Number of I/O: 54
Part Status: Active
Supplier Device Package: 64-LQFP (10x10)
Peripherals: I2S, LVD, POR, PWM, WDT
Connectivity: CSIO, I2C, LINbus, SmartCard, UART/USART, USB
Voltage - Supply (Vcc/Vdd): 1.65V ~ 3.6V
Core Size: 32-Bit Single-Core
Data Converters: A/D 8x12b
Core Processor: ARM® Cortex®-M0+
Program Memory Type: FLASH
Oscillator Type: Internal
Operating Temperature: -40°C ~ 105°C (TA)
RAM Size: 16K x 8
Program Memory Size: 128KB (128K x 8)
Speed: 40MHz
Mounting Type: Surface Mount
Package / Case: 64-LQFP
Packaging: Tray
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10+8.04 EUR
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160+6.59 EUR
320+6.25 EUR
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S6E1C32D0AGN20000 S6E1C32D0AGN20000 Infineon Technologies Infineon-S6E1C32D0AGN20050-DataSheet-v01_00-EN.pdf?fileId=8ac78c8c81ae03fc0181ec33e75c2c49 Description: IC MCU 32BIT 128KB FLASH 64QFN
DigiKey Programmable: Not Verified
Number of I/O: 54
Part Status: Active
Supplier Device Package: 64-QFN (9x9)
Peripherals: I²S, LVD, POR, PWM, WDT
Connectivity: CSIO, I²C, LINbus, SmartCard, UART/USART, USB
Voltage - Supply (Vcc/Vdd): 1.65V ~ 3.6V
Core Size: 32-Bit Single-Core
Data Converters: A/D 8x12b
Core Processor: ARM® Cortex®-M0+
Program Memory Type: FLASH
Oscillator Type: Internal
Operating Temperature: -40°C ~ 105°C (TA)
RAM Size: 16K x 8
Program Memory Size: 128KB (128K x 8)
Speed: 40MHz
Mounting Type: Surface Mount
Package / Case: 64-WFQFN Exposed Pad
Packaging: Tray
Produkt ist nicht verfügbar
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S6E1C32D0AGN20050 Infineon Technologies Infineon-S6E1C32D0AGN20050-DataSheet-v01_00-EN.pdf?fileId=8ac78c8c81ae03fc0181ec33e75c2c49 Description: MULTI-MARKET MCUS
Core Size: 32-Bit
Data Converters: A/D 8x12b
Core Processor: ARM® Cortex®-M0+
Program Memory Type: FLASH
Oscillator Type: Internal
Operating Temperature: -40°C ~ 105°C (TA)
RAM Size: 16K x 8
Program Memory Size: 128KB (128K x 8)
Speed: 40MHz
Mounting Type: Surface Mount
Package / Case: 64-WFQFN Exposed Pad
Packaging: Tray
Number of I/O: 54
Part Status: Active
Supplier Device Package: 64-QFN (9x9)
Peripherals: I²S, LVD, POR, PWM, WDT
Connectivity: CSIO, I²C, LINbus, SmartCard, UART/USART, USB
Voltage - Supply (Vcc/Vdd): 1.65V ~ 3.6V
Produkt ist nicht verfügbar
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IPG20N06S2L65AUMA1 Infineon Technologies Description: MOSFET
Packaging: Bulk
Part Status: Obsolete
Produkt ist nicht verfügbar
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S25FL512SAGBHIS10 S25FL512SAGBHIS10 Infineon Technologies Infineon-S25FL512S_512_Mb_(64_MB)_3.0_V_SPI_Flash_Memory-DataSheet-v19_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ed046ae4b53&utm_source=cypress&utm_medium=referral&utm_campaign=202110_globe_en_all_integration-files Description: IC FLASH 512MBIT SPI/QUAD 24BGA
DigiKey Programmable: Not Verified
Memory Organization: 64M x 8
Memory Interface: SPI - Quad I/O
Part Status: Active
Supplier Device Package: 24-BGA (8x6)
Memory Format: FLASH
Clock Frequency: 133 MHz
Technology: FLASH - NOR
Voltage - Supply: 2.7V ~ 3.6V
Operating Temperature: -40°C ~ 85°C (TA)
Memory Type: Non-Volatile
Memory Size: 512Mbit
Mounting Type: Surface Mount
Package / Case: 24-TBGA
Packaging: Tray
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50+8.45 EUR
100+8.25 EUR
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676+7.69 EUR
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PVA3054NS-TPBF PVA3054NS-TPBF Infineon Technologies pva30n.pdf?fileId=5546d462533600a4015356839c762923 Description: SSR RELAY SPST-NO 50MA 0-300V
Packaging: Tape & Reel (TR)
Package / Case: 8-SMD (0.300", 7.62mm), 4 Leads
Output Type: AC, DC
Mounting Type: Surface Mount
Voltage - Input: 1.2VDC
Circuit: SPST-NO (1 Form A)
Operating Temperature: -40°C ~ 85°C
Termination Style: Gull Wing
Load Current: 50 mA
Approval Agency: UL
Relay Type: Photo-Coupled Relay (Photorelay)
Supplier Device Package: 8-SMD
Part Status: Active
Voltage - Load: 0 V ~ 300 V
On-State Resistance (Max): 160 Ohms
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PVA3054NS-TPBF PVA3054NS-TPBF Infineon Technologies pva30n.pdf?fileId=5546d462533600a4015356839c762923 Description: SSR RELAY SPST-NO 50MA 0-300V
Relay Type: Photo-Coupled Relay (Photorelay)
Approval Agency: UL
Operating Temperature: -40°C ~ 85°C
On-State Resistance (Max): 160 Ohms
Voltage - Load: 0 V ~ 300 V
Part Status: Active
Supplier Device Package: 8-SMD
Load Current: 50 mA
Termination Style: Gull Wing
Circuit: SPST-NO (1 Form A)
Voltage - Input: 1.2VDC
Mounting Type: Surface Mount
Output Type: AC, DC
Package / Case: 8-SMD (0.300", 7.62mm), 4 Leads
Packaging: Cut Tape (CT)
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2+12.96 EUR
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25+11.03 EUR
50+10.66 EUR
100+10.29 EUR
250+9.83 EUR
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FM25CL64B-DGTR FM25CL64B-DGTR Infineon Technologies Infineon-FM25CL64B_64-Kbit_(8_K_8)_Serial_(SPI)_F-RAM-DataSheet-v11_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ebdfcd83119&utm_source=cypress&utm_medium=referral&utm_campaign=202110_globe_en_all_integration-files Description: IC FRAM 64KBIT SPI 20MHZ 8DFN
DigiKey Programmable: Not Verified
Memory Organization: 8K x 8
Memory Interface: SPI
Part Status: Active
Supplier Device Package: 8-DFN (4x4.5)
Memory Format: FRAM
Clock Frequency: 20 MHz
Technology: FRAM (Ferroelectric RAM)
Voltage - Supply: 2.7V ~ 3.6V
Operating Temperature: -40°C ~ 85°C (TA)
Memory Type: Non-Volatile
Memory Size: 64Kbit
Mounting Type: Surface Mount
Package / Case: 8-WDFN Exposed Pad
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar
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FM25CL64B-DGTR FM25CL64B-DGTR Infineon Technologies Infineon-FM25CL64B_64-Kbit_(8_K_8)_Serial_(SPI)_F-RAM-DataSheet-v11_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ebdfcd83119&utm_source=cypress&utm_medium=referral&utm_campaign=202110_globe_en_all_integration-files Description: IC FRAM 64KBIT SPI 20MHZ 8DFN
Clock Frequency: 20 MHz
Technology: FRAM (Ferroelectric RAM)
Voltage - Supply: 2.7V ~ 3.6V
Operating Temperature: -40°C ~ 85°C (TA)
Memory Type: Non-Volatile
Memory Size: 64Kbit
Mounting Type: Surface Mount
Package / Case: 8-WDFN Exposed Pad
Packaging: Cut Tape (CT)
DigiKey Programmable: Not Verified
Memory Organization: 8K x 8
Memory Interface: SPI
Part Status: Active
Supplier Device Package: 8-DFN (4x4.5)
Memory Format: FRAM
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500+4.14 EUR
1000+4.05 EUR
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TLE4678GMXUMA2 TLE4678GMXUMA2 Infineon Technologies Infineon-TLE4678-DS-v01_20-EN.pdf?fileId=5546d46259d9a4bf0159f9d6f7333ee6 Description: IC REG LINEAR 5V 200MA PG-DSO-14
Qualification: AEC-Q100
Grade: Automotive
Current - Supply (Max): 8 mA
Protection Features: Over Current, Over Temperature, Reverse Polarity, Short Circuit
Voltage Dropout (Max): 0.35V @ 150mA
PSRR: 65dB (100Hz)
Part Status: Active
Control Features: Reset, Watchdog
Voltage - Output (Min/Fixed): 5V
Supplier Device Package: PG-DSO-14
Number of Regulators: 1
Voltage - Input (Max): 45V
Current - Quiescent (Iq): 80 µA
Output Configuration: Positive
Operating Temperature: -40°C ~ 150°C
Current - Output: 200mA
Mounting Type: Surface Mount
Output Type: Fixed
Package / Case: 14-SOIC (0.154", 3.90mm Width)
Packaging: Tape & Reel (TR)
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TLE4678GMXUMA2 TLE4678GMXUMA2 Infineon Technologies Infineon-TLE4678-DS-v01_20-EN.pdf?fileId=5546d46259d9a4bf0159f9d6f7333ee6 Description: IC REG LINEAR 5V 200MA PG-DSO-14
Qualification: AEC-Q100
Grade: Automotive
Current - Quiescent (Iq): 80 µA
Output Configuration: Positive
Operating Temperature: -40°C ~ 150°C
Current - Output: 200mA
Mounting Type: Surface Mount
Output Type: Fixed
Package / Case: 14-SOIC (0.154", 3.90mm Width)
Packaging: Cut Tape (CT)
Current - Supply (Max): 8 mA
Protection Features: Over Current, Over Temperature, Reverse Polarity, Short Circuit
Voltage Dropout (Max): 0.35V @ 150mA
PSRR: 65dB (100Hz)
Part Status: Active
Control Features: Reset, Watchdog
Voltage - Output (Min/Fixed): 5V
Supplier Device Package: PG-DSO-14
Number of Regulators: 1
Voltage - Input (Max): 45V
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T1190N16TOFVTXPSA1 T1190N16TOFVTXPSA1 Infineon Technologies Infineon-T1190N-DS-v02_00-en_de.pdf?fileId=db3a304323b87bc20123ffba89405c02 Description: SCR MODULE 1.8KV 2800A TO-200AC
Voltage - Off State: 1.8 kV
Current - On State (It (RMS)) (Max): 2800 A
Part Status: Active
Voltage - Gate Trigger (Vgt) (Max): 2 V
Current - On State (It (AV)) (Max): 1190 A
Number of SCRs, Diodes: 1 SCR
Current - Non Rep. Surge 50, 60Hz (Itsm): 22500A @ 50Hz
Current - Gate Trigger (Igt) (Max): 250 mA
Current - Hold (Ih) (Max): 500 mA
Structure: Single
Operating Temperature: -40°C ~ 125°C
Mounting Type: Clamp On
Package / Case: TO-200AC
Packaging: Tray
Produkt ist nicht verfügbar
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T1190N14TOFVTXPSA1 T1190N14TOFVTXPSA1 Infineon Technologies Infineon-T1190N-DS-v02_00-en_de.pdf?fileId=db3a304323b87bc20123ffba89405c02 Description: SCR MODULE 1.8KV 2800A TO-200AC
Voltage - Off State: 1.8 kV
Current - On State (It (RMS)) (Max): 2800 A
Part Status: Active
Voltage - Gate Trigger (Vgt) (Max): 2 V
Current - On State (It (AV)) (Max): 1190 A
Number of SCRs, Diodes: 1 SCR
Current - Non Rep. Surge 50, 60Hz (Itsm): 22500A @ 50Hz
Current - Gate Trigger (Igt) (Max): 250 mA
Current - Hold (Ih) (Max): 500 mA
Structure: Single
Operating Temperature: -40°C ~ 125°C
Mounting Type: Clamp On
Package / Case: TO-200AC
Packaging: Tray
auf Bestellung 3 Stücke:
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1+510.81 EUR
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IPDQ60R017S7AXTMA1 IPDQ60R017S7AXTMA1 Infineon Technologies Infineon-IPDQ60R017S7A-DataSheet-v02_00-EN.pdf?fileId=8ac78c8c850f4bee018513cc675f681b Description: MOSFET
Packaging: Tape & Reel (TR)
Package / Case: 22-PowerBSOP Module
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 30A (Tc)
Rds On (Max) @ Id, Vgs: 17mOhm @ 29A, 12V
Power Dissipation (Max): 500W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 1.89mA
Supplier Device Package: PG-HDSOP-22-1
Grade: Automotive
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 12V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 196 nC @ 12 V
Input Capacitance (Ciss) (Max) @ Vds: 7370 pF @ 300 V
Qualification: AEC-Q101
Produkt ist nicht verfügbar
 Mindestbestellmenge: 750 Stücke
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IPDQ60R017S7AXTMA1 IPDQ60R017S7AXTMA1 Infineon Technologies Infineon-IPDQ60R017S7A-DataSheet-v02_00-EN.pdf?fileId=8ac78c8c850f4bee018513cc675f681b Description: MOSFET
Packaging: Cut Tape (CT)
Package / Case: 22-PowerBSOP Module
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 30A (Tc)
Rds On (Max) @ Id, Vgs: 17mOhm @ 29A, 12V
Power Dissipation (Max): 500W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 1.89mA
Supplier Device Package: PG-HDSOP-22-1
Grade: Automotive
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 12V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 196 nC @ 12 V
Input Capacitance (Ciss) (Max) @ Vds: 7370 pF @ 300 V
Qualification: AEC-Q101
auf Bestellung 748 Stücke:
Lieferzeit 10-14 Tag (e)
1+25.85 EUR
10+21.88 EUR
100+18.93 EUR
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IPDQ60R017S7XTMA1 IPDQ60R017S7XTMA1 Infineon Technologies Infineon-IPDQ60R017S7-DataSheet-v02_00-EN.pdf?fileId=8ac78c8c850f4bee018513cc5a686818 Description: MOSFET
Packaging: Tape & Reel (TR)
Package / Case: 22-PowerBSOP Module
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 30A (Tc)
Rds On (Max) @ Id, Vgs: 17mOhm @ 29A, 12V
Power Dissipation (Max): 500W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 1.89mA
Supplier Device Package: PG-HDSOP-22-1
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 12V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 196 nC @ 12 V
Input Capacitance (Ciss) (Max) @ Vds: 7370 pF @ 300 V
Produkt ist nicht verfügbar
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IPDQ60R017S7XTMA1 IPDQ60R017S7XTMA1 Infineon Technologies Infineon-IPDQ60R017S7-DataSheet-v02_00-EN.pdf?fileId=8ac78c8c850f4bee018513cc5a686818 Description: MOSFET
Packaging: Cut Tape (CT)
Package / Case: 22-PowerBSOP Module
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 30A (Tc)
Rds On (Max) @ Id, Vgs: 17mOhm @ 29A, 12V
Power Dissipation (Max): 500W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 1.89mA
Supplier Device Package: PG-HDSOP-22-1
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 12V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 196 nC @ 12 V
Input Capacitance (Ciss) (Max) @ Vds: 7370 pF @ 300 V
auf Bestellung 686 Stücke:
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1+24.94 EUR
10+21.05 EUR
100+18.2 EUR
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IPDQ60R040S7AXTMA1 IPDQ60R040S7AXTMA1 Infineon Technologies Infineon-IPDQ60R040S7A-DataSheet-v02_00-EN.pdf?fileId=8ac78c8c850f4bee018513cc80766821 Description: MOSFET
Packaging: Tape & Reel (TR)
Package / Case: 22-PowerBSOP Module
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 14A (Tc)
Rds On (Max) @ Id, Vgs: 40mOhm @ 13A, 12V
Power Dissipation (Max): 272W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 790µA
Supplier Device Package: PG-HDSOP-22-1
Grade: Automotive
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 12V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 83 nC @ 12 V
Qualification: AEC-Q101
Produkt ist nicht verfügbar
 Mindestbestellmenge: 750 Stücke
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IPDQ60R040S7AXTMA1 IPDQ60R040S7AXTMA1 Infineon Technologies Infineon-IPDQ60R040S7A-DataSheet-v02_00-EN.pdf?fileId=8ac78c8c850f4bee018513cc80766821 Description: MOSFET
Packaging: Cut Tape (CT)
Package / Case: 22-PowerBSOP Module
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 14A (Tc)
Rds On (Max) @ Id, Vgs: 40mOhm @ 13A, 12V
Power Dissipation (Max): 272W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 790µA
Supplier Device Package: PG-HDSOP-22-1
Grade: Automotive
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 12V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 83 nC @ 12 V
Qualification: AEC-Q101
auf Bestellung 720 Stücke:
Lieferzeit 10-14 Tag (e)
2+17.36 EUR
10+11.88 EUR
100+8.77 EUR
Mindestbestellmenge: 2 Stücke
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IPDQ60R045CFD7XTMA1 IPDQ60R045CFD7XTMA1 Infineon Technologies Infineon-IPDQ60R045CFD7-DataSheet-v02_00-EN.pdf?fileId=8ac78c8c8412f8d3018465c80ad309dd Description: HIGH POWER_NEW PG-HDSOP-22
Packaging: Cut Tape (CT)
Package / Case: 22-PowerBSOP Module
Mounting Type: Surface Mount
Technology: MOSFET (Metal Oxide)
Supplier Device Package: PG-HDSOP-22-1
Part Status: Active
Drain to Source Voltage (Vdss): 600 V
auf Bestellung 750 Stücke:
Lieferzeit 10-14 Tag (e)
2+14.39 EUR
10+11.1 EUR
25+10.28 EUR
100+9.38 EUR
250+8.95 EUR
Mindestbestellmenge: 2 Stücke
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IPDQ60R075CFD7XTMA1 IPDQ60R075CFD7XTMA1 Infineon Technologies Infineon-IPDQ60R075CFD7-DataSheet-v02_00-EN.pdf?fileId=8ac78c8c8412f8d3018465868a09094e Description: HIGH POWER_NEW PG-HDSOP-22
Packaging: Cut Tape (CT)
Package / Case: 22-PowerBSOP Module
Mounting Type: Surface Mount
Technology: MOSFET (Metal Oxide)
Supplier Device Package: PG-HDSOP-22-1
Part Status: Active
Drain to Source Voltage (Vdss): 600 V
auf Bestellung 750 Stücke:
Lieferzeit 10-14 Tag (e)
3+10.28 EUR
10+7.84 EUR
25+7.22 EUR
100+6.56 EUR
250+6.24 EUR
Mindestbestellmenge: 3 Stücke
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IPDQ65R060CFD7XTMA1 IPDQ65R060CFD7XTMA1 Infineon Technologies Infineon-IPDQ65R060CFD7-DataSheet-v02_00-EN.pdf?fileId=8ac78c8c869190210186e3ff7193778b Description: HIGH POWER_NEW
Packaging: Tape & Reel (TR)
Package / Case: 22-PowerBSOP Module
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 45A (Tc)
Rds On (Max) @ Id, Vgs: 60mOhm @ 16.4A, 10V
Power Dissipation (Max): 272W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 820µA
Supplier Device Package: PG-HDSOP-22-1
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 65 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3288 pF @ 400 V
Produkt ist nicht verfügbar
 Mindestbestellmenge: 750 Stücke
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IPDQ65R125CFD7XTMA1 IPDQ65R125CFD7XTMA1 Infineon Technologies Infineon-IPDQ65R125CFD7-DataSheet-v02_01-EN.pdf?fileId=8ac78c8c869190210186e4089b4677d5 Description: HIGH POWER_NEW
Packaging: Tape & Reel (TR)
Package / Case: 22-PowerBSOP Module
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 24A (Tc)
Rds On (Max) @ Id, Vgs: 125mOhm @ 7.8A, 10V
Power Dissipation (Max): 160W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 390µA
Supplier Device Package: PG-HDSOP-22-1
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 32 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1566 pF @ 400 V
Produkt ist nicht verfügbar
 Mindestbestellmenge: 750 Stücke
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IPDQ65R029CFD7XTMA1 IPDQ65R029CFD7XTMA1 Infineon Technologies Infineon-IPDQ65R029CFD7-DataSheet-v02_00-EN.pdf?fileId=8ac78c8c869190210186e047429d71e3 Description: HIGH POWER_NEW
Packaging: Tape & Reel (TR)
Package / Case: 22-PowerBSOP Module
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 85A (Tc)
Rds On (Max) @ Id, Vgs: 29mOhm @ 35.8A, 10V
Power Dissipation (Max): 463W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 1.79mA
Supplier Device Package: PG-HDSOP-22-1
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 139 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 7149 pF @ 400 V
Produkt ist nicht verfügbar
 Mindestbestellmenge: 750 Stücke
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IPDQ65R017CFD7XTMA1 IPDQ65R017CFD7XTMA1 Infineon Technologies Infineon-IPDQ65R017CFD7-DataSheet-v02_00-EN.pdf?fileId=8ac78c8c869190210186e047325971e0 Description: HIGH POWER_NEW
Packaging: Tape & Reel (TR)
Package / Case: 22-PowerBSOP Module
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 136A (Tc)
Rds On (Max) @ Id, Vgs: 17mOhm @ 61.6A, 10V
Power Dissipation (Max): 694W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 3.08mA
Supplier Device Package: PG-HDSOP-22-1
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 236 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 12338 pF @ 400 V
Produkt ist nicht verfügbar
 Mindestbestellmenge: 750 Stücke
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IPDQ65R040CFD7XTMA1 IPDQ65R040CFD7XTMA1 Infineon Technologies Infineon-IPDQ65R040CFD7-DataSheet-v02_00-EN.pdf?fileId=8ac78c8c869190210186e3ff5dfe7788 Description: HIGH POWER_NEW
Packaging: Tape & Reel (TR)
Package / Case: 22-PowerBSOP Module
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 64A (Tc)
Rds On (Max) @ Id, Vgs: 40mOhm @ 24.8A, 10V
Power Dissipation (Max): 357W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 1.24mA
Supplier Device Package: PG-HDSOP-22-1
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 97 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4975 pF @ 400 V
Produkt ist nicht verfügbar
 Mindestbestellmenge: 750 Stücke
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TLE5014SP16DE0002XUMA1 TLE5014SP16DE0002XUMA1 Infineon Technologies Infineon-TLE5014SP16D+E0002-DataSheet-v01_00-EN.pdf?fileId=5546d46270c4f93e0170c92e1bc10212 Description: POSITION&CURRENT SENSORS
Packaging: Cut Tape (CT)
Part Status: Active
auf Bestellung 2445 Stücke:
Lieferzeit 10-14 Tag (e)
2+20.21 EUR
10+13.93 EUR
100+10.75 EUR
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DF14MR12W1M1HFB67BPSA1 DF14MR12W1M1HFB67BPSA1 Infineon Technologies DF14MR12W1M1HF_B67_DS.pdf Description: MOSFET 1200V AG-EASY1B
Part Status: Active
Supplier Device Package: AG-EASY1B
Drain to Source Voltage (Vdss): 1200V (1.2kV)
Technology: Silicon Carbide (SiC)
Mounting Type: Chassis Mount
Package / Case: Module
Packaging: Tray
auf Bestellung 24 Stücke:
Lieferzeit 10-14 Tag (e)
1+136.18 EUR
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IR2133STRPBF IR2133STRPBF Infineon Technologies IRSDS12168-1.pdf?t.download=true&u=5oefqw Description: IC GATE DRVR HALF-BRIDGE 28SOIC
Packaging: Tape & Reel (TR)
Package / Case: 28-SOIC (0.295", 7.50mm Width)
Mounting Type: Surface Mount
Operating Temperature: 125°C (TJ)
Voltage - Supply: 10V ~ 20V
Input Type: Inverting
High Side Voltage - Max (Bootstrap): 600 V
Supplier Device Package: 28-SOIC
Rise / Fall Time (Typ): 90ns, 40ns
Channel Type: 3-Phase
Driven Configuration: Half-Bridge
Number of Drivers: 6
Gate Type: IGBT, MOSFET (N-Channel)
Logic Voltage - VIL, VIH: 0.8V, 2.2V
Current - Peak Output (Source, Sink): 250mA, 500mA
Part Status: Active
DigiKey Programmable: Not Verified
auf Bestellung 2000 Stücke:
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1000+4.58 EUR
2000+4.47 EUR
Mindestbestellmenge: 1000 Stücke
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IR2133STRPBF IR2133STRPBF Infineon Technologies IRSDS12168-1.pdf?t.download=true&u=5oefqw Description: IC GATE DRVR HALF-BRIDGE 28SOIC
Packaging: Cut Tape (CT)
Package / Case: 28-SOIC (0.295", 7.50mm Width)
Mounting Type: Surface Mount
Operating Temperature: 125°C (TJ)
Voltage - Supply: 10V ~ 20V
Input Type: Inverting
High Side Voltage - Max (Bootstrap): 600 V
Supplier Device Package: 28-SOIC
Rise / Fall Time (Typ): 90ns, 40ns
Channel Type: 3-Phase
Driven Configuration: Half-Bridge
Number of Drivers: 6
Gate Type: IGBT, MOSFET (N-Channel)
Logic Voltage - VIL, VIH: 0.8V, 2.2V
Current - Peak Output (Source, Sink): 250mA, 500mA
Part Status: Active
DigiKey Programmable: Not Verified
auf Bestellung 2118 Stücke:
Lieferzeit 10-14 Tag (e)
3+8.21 EUR
10+6.2 EUR
25+5.69 EUR
100+5.14 EUR
250+4.88 EUR
500+4.71 EUR
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FM33256B-G FM33256B-G Infineon Technologies Infineon-FM33256B_256-Kbit_(32_K_8)_Integrated_Processor_Companion_with_F-RAM-DataSheet-v04_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ec926014192 Description: IC PROCESSOR COMPANION 14SOIC
Packaging: Tube
Package / Case: 14-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Type: Processor Companion
Applications: Processor-Based Systems
Supplier Device Package: 14-SOIC
Part Status: Discontinued at Digi-Key
DigiKey Programmable: Not Verified
Produkt ist nicht verfügbar
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CY15V104QN-50LPXIT Infineon Technologies Infineon-CY15B104QN_CY15V104QN_Excelon(TM)_LP_4-Mbit_(512K_X_8)_Serial_(SPI)_F-RAM-DataSheet-v14_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ee7709b704a Description: IC FRAM 4MBIT SPI 50MHZ 8GQFN
Packaging: Tape & Reel (TR)
Package / Case: 8-UQFN
Mounting Type: Surface Mount
Memory Size: 4Mbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 1.71V ~ 1.89V
Technology: FRAM (Ferroelectric RAM)
Clock Frequency: 50 MHz
Memory Format: FRAM
Supplier Device Package: 8-GQFN (3.23x3.28)
Part Status: Active
Memory Interface: SPI
Access Time: 8 ns
Memory Organization: 512K x 8
DigiKey Programmable: Not Verified
Produkt ist nicht verfügbar
 Mindestbestellmenge: 2500 Stücke
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IPD60R180P7SE8228AUMA1 IPD60R180P7SE8228AUMA1 Infineon Technologies infineon-ipd60r180p7s-datasheet-en.pdf Description: MOSFET N-CH 600V 18A TO252-3
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 18A (Tc)
Rds On (Max) @ Id, Vgs: 180mOhm @ 5.6A, 10V
Power Dissipation (Max): 72W (Tc)
Vgs(th) (Max) @ Id: 4V @ 280µA
Supplier Device Package: PG-TO252-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 25 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1081 pF @ 400 V
Produkt ist nicht verfügbar
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IPA70R360P7SXKSA1 IPA70R360P7SXKSA1 Infineon Technologies Infineon-IPA70R360P7S-DS-v02_00-EN.pdf?fileId=5546d462584d1d4a0158cf777f5b0d77 Description: MOSFET N-CH 700V 12.5A TO220
Packaging: Tube
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 12.5A (Tc)
Rds On (Max) @ Id, Vgs: 360mOhm @ 3A, 10V
Power Dissipation (Max): 26.4W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 150µA
Supplier Device Package: PG-TO220 Full Pack
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±16V
Drain to Source Voltage (Vdss): 700 V
Gate Charge (Qg) (Max) @ Vgs: 16.4 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 517 pF @ 400 V
Produkt ist nicht verfügbar
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S6E2C39H0AGV2000A S6E2C39H0AGV2000A Infineon Technologies download Description: IC MCU 32BIT 1.5MB FLASH 144LQFP
Packaging: Tray
Package / Case: 144-LQFP
Mounting Type: Surface Mount
Speed: 200MHz
Program Memory Size: 1.5MB (1.5M x 8)
RAM Size: 192K x 8
Operating Temperature: -40°C ~ 125°C (TA)
Oscillator Type: Internal
Program Memory Type: FLASH
Core Processor: ARM® Cortex®-M4F
Data Converters: A/D 24x12b; D/A 2x12b
Core Size: 32-Bit Single-Core
Voltage - Supply (Vcc/Vdd): 2.7V ~ 5.5V
Connectivity: CSIO, EBI/EMI, I²C, LINbus, SD, UART/USART, USB
Peripherals: DMA, LVD, POR, PWM, WDT
Supplier Device Package: 144-LQFP (20x20)
Part Status: Active
Number of I/O: 120
DigiKey Programmable: Not Verified
Produkt ist nicht verfügbar
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AUIRFS4010 AUIRFS4010 Infineon Technologies auirfs4010.pdf?fileId=5546d462533600a4015355b6a9e114c3 Description: MOSFET N-CH 100V 180A D2PAK
Packaging: Tube
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 180A (Tc)
Rds On (Max) @ Id, Vgs: 4.7mOhm @ 106A, 10V
Power Dissipation (Max): 375W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: PG-TO263-3
Grade: Automotive
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 215 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 9575 pF @ 50 V
Qualification: AEC-Q101
Produkt ist nicht verfügbar
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MB91306RPFV-G-SNE1 Infineon Technologies Description: IC ANALOG
Packaging: Bulk
Package / Case: 120-LQFP
Mounting Type: Surface Mount
Speed: 66MHz
RAM Size: 64K x 8
Operating Temperature: 0°C ~ 70°C
Oscillator Type: External
Program Memory Type: ROMless
Core Processor: FR60 RISC
Data Converters: A/D 4x10b
Core Size: 32-Bit Single-Core
Voltage - Supply (Vcc/Vdd): 1.65V ~ 1.95V, 3V ~ 3.6V
Connectivity: EBI/EMI, I²C, UART/USART
Peripherals: DMA, POR, WDT
Supplier Device Package: 120-LQFP (16x16)
Part Status: Obsolete
Number of I/O: 69
DigiKey Programmable: Not Verified
Produkt ist nicht verfügbar
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CY15V108QI-20LPXIT Infineon Technologies Infineon-CY15B108QI_CY15V108QI_Excelon(TM)_LP_8-Mbit_(1024K_X_8)_Serial_(SPI)_F-RAM-DataSheet-v15_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ee73ee37021 Description: IC FRAM 8MBIT SPI 20MHZ 8GQFN
DigiKey Programmable: Not Verified
Memory Organization: 1M x 8
Access Time: 20 ns
Memory Interface: SPI
Part Status: Active
Supplier Device Package: 8-GQFN (3.23x3.28)
Memory Format: FRAM
Clock Frequency: 20 MHz
Technology: FRAM (Ferroelectric RAM)
Voltage - Supply: 1.71V ~ 1.89V
Operating Temperature: -40°C ~ 85°C (TA)
Memory Type: Non-Volatile
Memory Size: 8Mbit
Mounting Type: Surface Mount
Package / Case: 8-UQFN
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar
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IKCM20L60GAXKMA1 IKCM20L60GAXKMA1 Infineon Technologies Infineon-IKCM20L60GA-DS-v01_01-EN.pdf?fileId=5546d4624fb7fef2014fcb7a6f8e7902 Description: IFPS MODULES 24MDIP
Packaging: Tube
Package / Case: 24-PowerDIP Module (1.028", 26.10mm)
Mounting Type: Through Hole
Type: IGBT
Configuration: 3 Phase
Voltage - Isolation: 2000Vrms
Part Status: Active
Current: 20 A
Voltage: 600 V
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IKCM15L60GAXKMA1 IKCM15L60GAXKMA1 Infineon Technologies Infineon-IKCM15L60GA-DS-v01_02-EN.pdf?fileId=5546d4624fb7fef2014fcb71486178f7 Description: IGBT IPM 600V 15A 24-PWRDIP MOD
Packaging: Tube
Package / Case: 24-PowerDIP Module (1.028", 26.10mm)
Mounting Type: Through Hole
Type: IGBT
Configuration: 3 Phase
Voltage - Isolation: 2000Vrms
Part Status: Active
Current: 15 A
Voltage: 600 V
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IKCM10L60GAXKMA1 IKCM10L60GAXKMA1 Infineon Technologies Infineon-IKCM10L60GA-DS-v01_01-EN.pdf?fileId=5546d4624fb7fef2014fcb3a61b278a2 Description: IGBT IPM 600V 10A 24-PWRDIP MOD
Packaging: Tube
Package / Case: 24-PowerDIP Module (1.028", 26.10mm)
Mounting Type: Through Hole
Type: IGBT
Configuration: 3 Phase
Voltage - Isolation: 2000Vrms
Part Status: Active
Current: 10 A
Voltage: 600 V
Produkt ist nicht verfügbar
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IPP60R280CFD7XKSA1 IPP60R280CFD7XKSA1 Infineon Technologies Infineon-IPP60R280CFD7-DS-v02_00-EN.pdf?fileId=5546d4625e763904015ea850969a78ae Description: MOSFET N-CH 650V 9A TO220-3
Input Capacitance (Ciss) (Max) @ Vds: 807 pF @ 400 V
Gate Charge (Qg) (Max) @ Vgs: 18 nC @ 10 V
Drain to Source Voltage (Vdss): 650 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Active
Supplier Device Package: PG-TO220-3
Vgs(th) (Max) @ Id: 4.5V @ 180µA
Power Dissipation (Max): 52W (Tc)
Rds On (Max) @ Id, Vgs: 280mOhm @ 3.6A, 10V
Current - Continuous Drain (Id) @ 25°C: 9A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-220-3
Packaging: Tube
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IPB120N10S403ATMA1 IPB120N10S403ATMA1 Infineon Technologies IPP_B_I120N10S4-03-Data-Sheet-10-Infineon.pdf?fileId=5546d46147a9c2e401480c5c81580b3a Description: MOSFET N-CH 100V 120A D2PAK
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 120A (Tc)
Rds On (Max) @ Id, Vgs: 3.5mOhm @ 100A, 10V
Power Dissipation (Max): 250W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 180µA
Supplier Device Package: PG-TO263-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 140 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 10120 pF @ 25 V
Grade: Automotive
Qualification: AEC-Q101
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IPB120N10S403ATMA1 IPB120N10S403ATMA1 Infineon Technologies IPP_B_I120N10S4-03-Data-Sheet-10-Infineon.pdf?fileId=5546d46147a9c2e401480c5c81580b3a Description: MOSFET N-CH 100V 120A D2PAK
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 120A (Tc)
Rds On (Max) @ Id, Vgs: 3.5mOhm @ 100A, 10V
Power Dissipation (Max): 250W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 180µA
Supplier Device Package: PG-TO263-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 140 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 10120 pF @ 25 V
Grade: Automotive
Qualification: AEC-Q101
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IPP120N10S405AKSA1 IPP120N10S405AKSA1 Infineon Technologies IPP_B_I120N10S4-05-Data-Sheet-10-Infineon.pdf?fileId=5546d46147a9c2e401480cf161070b67 Description: MOSFET N-CH 100V 120A TO220-3
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 120A (Tc)
Rds On (Max) @ Id, Vgs: 5.3mOhm @ 100A, 10V
Power Dissipation (Max): 190W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 120µA
Supplier Device Package: PG-TO220-3-1
Grade: Automotive
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 91 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 6540 pF @ 25 V
Qualification: AEC-Q101
Produkt ist nicht verfügbar
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CY22393ZXC-529 CY22393-95,CY223931.pdf
CY22393ZXC-529
Hersteller: Infineon Technologies
Description: IC CLOCK GEN PROG 16TSSOP
DigiKey Programmable: Not Verified
Part Status: Obsolete
Packaging: Tube
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CY22393ZXC-529 CY22393-95,CY223931.pdf
CY22393ZXC-529
Hersteller: Infineon Technologies
Description: IC CLOCK GEN PROG 16TSSOP
Packaging: Tube
DigiKey Programmable: Not Verified
Part Status: Obsolete
Produkt ist nicht verfügbar
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CY22393ZXI-510 CY22393-95,CY223931.pdf
CY22393ZXI-510
Hersteller: Infineon Technologies
Description: IC CLOCK GEN PROG 16TSSOP
DigiKey Programmable: Not Verified
Part Status: Obsolete
Packaging: Tube
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CY22393ZXI-510 CY22393-95,CY223931.pdf
CY22393ZXI-510
Hersteller: Infineon Technologies
Description: IC CLOCK GEN PROG 16TSSOP
DigiKey Programmable: Not Verified
Part Status: Obsolete
Packaging: Tube
Produkt ist nicht verfügbar
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SLS32AIA020X2USON10XTMA4 Infineon-OPTIGA%20TRUST%20X%20SLS%2032AIA-DS-v02_60-EN.pdf?fileId=5546d462602a9dc801606f1c2ebb7fe9
SLS32AIA020X2USON10XTMA4
Hersteller: Infineon Technologies
Description: OPTIGA TRUST
DigiKey Programmable: Not Verified
Part Status: Active
Supplier Device Package: PG-USON-10-2
Core Processor: 16-Bit
Applications: Embedded Security Trusted Computing
Program Memory Type: NVM (10kB)
Voltage - Supply: 1.62V ~ 5.5V
Operating Temperature: -40°C ~ 105°C (TA)
Interface: I2C
Mounting Type: Surface Mount
Package / Case: 10-UFDFN Exposed Pad
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar
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SI4420DY si4420dypbf.pdf?fileId=5546d462533600a401535684734c2981
SI4420DY
Hersteller: Infineon Technologies
Description: MOSFET N-CH 30V 12.5A 8SO
Packaging: Tube
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 12.5A (Ta)
Rds On (Max) @ Id, Vgs: 9mOhm @ 12.5A, 10V
Power Dissipation (Max): 2.5W (Ta)
Vgs(th) (Max) @ Id: 1V @ 250µA
Supplier Device Package: 8-SO
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 78 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2240 pF @ 15 V
Produkt ist nicht verfügbar
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CY62126EV30LL-45BVXI CY62126EV30_RevH.pdf
CY62126EV30LL-45BVXI
Hersteller: Infineon Technologies
Description: IC SRAM 1MBIT PARALLEL 48VFBGA
Memory Interface: Parallel
Write Cycle Time - Word, Page: 45ns
Part Status: Active
Supplier Device Package: 48-VFBGA (6x8)
Memory Format: SRAM
Technology: SRAM - Asynchronous
Voltage - Supply: 2.2V ~ 3.6V
Operating Temperature: -40°C ~ 85°C (TA)
Memory Type: Volatile
Memory Size: 1Mbit
Mounting Type: Surface Mount
Package / Case: 48-VFBGA
Packaging: Tray
DigiKey Programmable: Not Verified
Memory Organization: 64K x 16
Access Time: 45 ns
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FS30R06W1E3BOMA1 Infineon-FS30R06W1E3-DS-v02_01-en_de.pdf?fileId=db3a304313b8b5a60113cecd4c3102c1
FS30R06W1E3BOMA1
Hersteller: Infineon Technologies
Description: IGBT MODULE 600V 60A 150W
Packaging: Tray
Package / Case: Module
Mounting Type: Chassis Mount
Input: Standard
Configuration: Three Phase Inverter
Operating Temperature: -40°C ~ 150°C (TJ)
Vce(on) (Max) @ Vge, Ic: 2V @ 15V, 30A
NTC Thermistor: Yes
Supplier Device Package: Module
IGBT Type: Trench Field Stop
Part Status: Active
Current - Collector (Ic) (Max): 60 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Power - Max: 150 W
Current - Collector Cutoff (Max): 1 mA
Input Capacitance (Cies) @ Vce: 1.65 nF @ 25 V
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FS20R06W1E3BOMA1 Infineon-FS20R06W1E3-DS-v02_01-en_de.pdf?fileId=db3a3043139a1bac0113b50a7b000552
FS20R06W1E3BOMA1
Hersteller: Infineon Technologies
Description: IGBT MODULE 600V 35A 135W
Packaging: Tray
Package / Case: Module
Mounting Type: Chassis Mount
Input: Standard
Configuration: Three Phase Inverter
Operating Temperature: -40°C ~ 150°C
Vce(on) (Max) @ Vge, Ic: 2V @ 15V, 20A
NTC Thermistor: Yes
Supplier Device Package: Module
IGBT Type: Trench Field Stop
Part Status: Active
Current - Collector (Ic) (Max): 35 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Power - Max: 135 W
Current - Collector Cutoff (Max): 1 mA
Input Capacitance (Cies) @ Vce: 1.1 nF @ 25 V
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FS35R12W1T4BOMA1 Infineon-FS35R12W1T4-DS-v02_01-en_de.pdf?fileId=db3a3043139a1bac0113b4be783c0543
FS35R12W1T4BOMA1
Hersteller: Infineon Technologies
Description: IGBT MOD 1200V 65A 225W MOD
Packaging: Tray
Package / Case: Module
Mounting Type: Chassis Mount
Input: Standard
Configuration: Three Phase Inverter
Operating Temperature: -40°C ~ 150°C (TJ)
Vce(on) (Max) @ Vge, Ic: 2.25V @ 15V, 35A
NTC Thermistor: Yes
Supplier Device Package: Module
IGBT Type: Trench Field Stop
Part Status: Active
Current - Collector (Ic) (Max): 65 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Power - Max: 225 W
Current - Collector Cutoff (Max): 1 mA
Input Capacitance (Cies) @ Vce: 2 nF @ 25 V
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1+62.62 EUR
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FS50R12KT4PB11BPSA1 Infineon-FS50R12KT4P_B11-DS-v03_00-EN.pdf?fileId=5546d4625d5945ed015dcbe0274c7cb4
FS50R12KT4PB11BPSA1
Hersteller: Infineon Technologies
Description: IGBT MODULE 1200V 100A MODULE
Packaging: Tray
Package / Case: Module
Mounting Type: Chassis Mount
Input: Standard
Configuration: Three Phase Inverter
Operating Temperature: -40°C ~ 150°C
Vce(on) (Max) @ Vge, Ic: 2.15V @ 15V, 50A
NTC Thermistor: Yes
Supplier Device Package: Module
IGBT Type: Trench Field Stop
Part Status: Active
Current - Collector (Ic) (Max): 100 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Power - Max: 20 mW
Current - Collector Cutoff (Max): 1 mA
Input Capacitance (Cies) @ Vce: 2.8 nF @ 25 V
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1+128.89 EUR
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FS300R17OE4B81BPSA1 Infineon-FS300R17OE4_B81-DataSheet-v03_00-EN.pdf?fileId=5546d4627255dbad01726029d02d6c72
FS300R17OE4B81BPSA1
Hersteller: Infineon Technologies
Description: MEDIUM POWER ECONO
Packaging: Bulk
Package / Case: Module
Mounting Type: Chassis Mount
Input: Standard
Configuration: Three Phase Inverter
Operating Temperature: -40°C ~ 150°C (TJ)
Vce(on) (Max) @ Vge, Ic: 2.3V @ 15V, 300A
NTC Thermistor: Yes
Supplier Device Package: AG-ECONOPP
IGBT Type: Trench Field Stop
Part Status: Active
Current - Collector (Ic) (Max): 300 A
Voltage - Collector Emitter Breakdown (Max): 1700 V
Power - Max: 20 mW
Current - Collector Cutoff (Max): 3 mA
Input Capacitance (Cies) @ Vce: 24.3 nF @ 25 V
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1+1517.18 EUR
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FP75R12N2T4B86BPSA1 infineon-fp75r12n2t4-ds-ja.pdf?fileId=5546d462689a790c016939d8a1586b47
Hersteller: Infineon Technologies
Description: IGBT MOD 1200V 75A AG-ECONO2B
Packaging: Tray
Package / Case: Module
Mounting Type: Chassis Mount
Input: Three Phase Bridge Rectifier
Configuration: Three Phase Inverter with Brake
Operating Temperature: -40°C ~ 150°C (TJ)
Vce(on) (Max) @ Vge, Ic: 2.15V @ 15V, 75A
NTC Thermistor: Yes
Supplier Device Package: AG-ECONO2B
IGBT Type: Trench Field Stop
Part Status: Active
Current - Collector (Ic) (Max): 75 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Power - Max: 20 mW
Current - Collector Cutoff (Max): 1 mA
Input Capacitance (Cies) @ Vce: 4.3 nF @ 25 V
Produkt ist nicht verfügbar
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FP75R17N3E4B20BPSA1 infineon-fs75r17w2e4p-b11-datasheet-en.pdf
FP75R17N3E4B20BPSA1
Hersteller: Infineon Technologies
Description: IGBT MODULE 1700V 150A AG-ECONO3
Packaging: Tray
Package / Case: Module
Mounting Type: Chassis Mount
Input: Three Phase Bridge Rectifier
Configuration: Three Phase Inverter
Operating Temperature: -40°C ~ 150°C (TJ)
Vce(on) (Max) @ Vge, Ic: 2.3V @ 15V, 75A
NTC Thermistor: Yes
Supplier Device Package: AG-ECONO3
IGBT Type: Trench Field Stop
Part Status: Active
Current - Collector (Ic) (Max): 150 A
Voltage - Collector Emitter Breakdown (Max): 1700 V
Power - Max: 555 W
Current - Collector Cutoff (Max): 1 mA
Input Capacitance (Cies) @ Vce: 6.8 nF @ 25 V
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1+202.42 EUR
10+161.86 EUR
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FS15R12YT3BOMA1
Hersteller: Infineon Technologies
Description: IGBT MOD 1200V 25A 110W MOD
Packaging: Tray
Package / Case: Module
Mounting Type: Chassis Mount
Input: Standard
Configuration: Full Bridge Inverter
Operating Temperature: -40°C ~ 125°C
Vce(on) (Max) @ Vge, Ic: 2.15V @ 15V, 15A
NTC Thermistor: Yes
Supplier Device Package: Module
Part Status: Obsolete
Current - Collector (Ic) (Max): 25 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Power - Max: 110 W
Current - Collector Cutoff (Max): 5 mA
Input Capacitance (Cies) @ Vce: 1.1 nF @ 25 V
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S6E1C32D0AGV20000 Infineon-S6E1C32D0AGN20050-DataSheet-v01_00-EN.pdf?fileId=8ac78c8c81ae03fc0181ec33e75c2c49
S6E1C32D0AGV20000
Hersteller: Infineon Technologies
Description: IC MCU 32BIT 128KB FLASH 64LQFP
DigiKey Programmable: Not Verified
Number of I/O: 54
Part Status: Active
Supplier Device Package: 64-LQFP (10x10)
Peripherals: I2S, LVD, POR, PWM, WDT
Connectivity: CSIO, I2C, LINbus, SmartCard, UART/USART, USB
Voltage - Supply (Vcc/Vdd): 1.65V ~ 3.6V
Core Size: 32-Bit Single-Core
Data Converters: A/D 8x12b
Core Processor: ARM® Cortex®-M0+
Program Memory Type: FLASH
Oscillator Type: Internal
Operating Temperature: -40°C ~ 105°C (TA)
RAM Size: 16K x 8
Program Memory Size: 128KB (128K x 8)
Speed: 40MHz
Mounting Type: Surface Mount
Package / Case: 64-LQFP
Packaging: Tray
auf Bestellung 1600 Stücke:
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AnzahlPrivatkunde
3+8.95 EUR
10+8.04 EUR
25+7.6 EUR
160+6.59 EUR
320+6.25 EUR
480+5.6 EUR
960+4.72 EUR
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S6E1C32D0AGN20000 Infineon-S6E1C32D0AGN20050-DataSheet-v01_00-EN.pdf?fileId=8ac78c8c81ae03fc0181ec33e75c2c49
S6E1C32D0AGN20000
Hersteller: Infineon Technologies
Description: IC MCU 32BIT 128KB FLASH 64QFN
DigiKey Programmable: Not Verified
Number of I/O: 54
Part Status: Active
Supplier Device Package: 64-QFN (9x9)
Peripherals: I²S, LVD, POR, PWM, WDT
Connectivity: CSIO, I²C, LINbus, SmartCard, UART/USART, USB
Voltage - Supply (Vcc/Vdd): 1.65V ~ 3.6V
Core Size: 32-Bit Single-Core
Data Converters: A/D 8x12b
Core Processor: ARM® Cortex®-M0+
Program Memory Type: FLASH
Oscillator Type: Internal
Operating Temperature: -40°C ~ 105°C (TA)
RAM Size: 16K x 8
Program Memory Size: 128KB (128K x 8)
Speed: 40MHz
Mounting Type: Surface Mount
Package / Case: 64-WFQFN Exposed Pad
Packaging: Tray
Produkt ist nicht verfügbar
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S6E1C32D0AGN20050 Infineon-S6E1C32D0AGN20050-DataSheet-v01_00-EN.pdf?fileId=8ac78c8c81ae03fc0181ec33e75c2c49
Hersteller: Infineon Technologies
Description: MULTI-MARKET MCUS
Core Size: 32-Bit
Data Converters: A/D 8x12b
Core Processor: ARM® Cortex®-M0+
Program Memory Type: FLASH
Oscillator Type: Internal
Operating Temperature: -40°C ~ 105°C (TA)
RAM Size: 16K x 8
Program Memory Size: 128KB (128K x 8)
Speed: 40MHz
Mounting Type: Surface Mount
Package / Case: 64-WFQFN Exposed Pad
Packaging: Tray
Number of I/O: 54
Part Status: Active
Supplier Device Package: 64-QFN (9x9)
Peripherals: I²S, LVD, POR, PWM, WDT
Connectivity: CSIO, I²C, LINbus, SmartCard, UART/USART, USB
Voltage - Supply (Vcc/Vdd): 1.65V ~ 3.6V
Produkt ist nicht verfügbar
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IPG20N06S2L65AUMA1
Hersteller: Infineon Technologies
Description: MOSFET
Packaging: Bulk
Part Status: Obsolete
Produkt ist nicht verfügbar
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S25FL512SAGBHIS10 Infineon-S25FL512S_512_Mb_(64_MB)_3.0_V_SPI_Flash_Memory-DataSheet-v19_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ed046ae4b53&utm_source=cypress&utm_medium=referral&utm_campaign=202110_globe_en_all_integration-files
S25FL512SAGBHIS10
Hersteller: Infineon Technologies
Description: IC FLASH 512MBIT SPI/QUAD 24BGA
DigiKey Programmable: Not Verified
Memory Organization: 64M x 8
Memory Interface: SPI - Quad I/O
Part Status: Active
Supplier Device Package: 24-BGA (8x6)
Memory Format: FLASH
Clock Frequency: 133 MHz
Technology: FLASH - NOR
Voltage - Supply: 2.7V ~ 3.6V
Operating Temperature: -40°C ~ 85°C (TA)
Memory Type: Non-Volatile
Memory Size: 512Mbit
Mounting Type: Surface Mount
Package / Case: 24-TBGA
Packaging: Tray
auf Bestellung 2781 Stücke:
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AnzahlPrivatkunde
3+9.59 EUR
10+8.92 EUR
25+8.65 EUR
50+8.45 EUR
100+8.25 EUR
338+7.89 EUR
676+7.69 EUR
1014+7.58 EUR
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PVA3054NS-TPBF pva30n.pdf?fileId=5546d462533600a4015356839c762923
PVA3054NS-TPBF
Hersteller: Infineon Technologies
Description: SSR RELAY SPST-NO 50MA 0-300V
Packaging: Tape & Reel (TR)
Package / Case: 8-SMD (0.300", 7.62mm), 4 Leads
Output Type: AC, DC
Mounting Type: Surface Mount
Voltage - Input: 1.2VDC
Circuit: SPST-NO (1 Form A)
Operating Temperature: -40°C ~ 85°C
Termination Style: Gull Wing
Load Current: 50 mA
Approval Agency: UL
Relay Type: Photo-Coupled Relay (Photorelay)
Supplier Device Package: 8-SMD
Part Status: Active
Voltage - Load: 0 V ~ 300 V
On-State Resistance (Max): 160 Ohms
auf Bestellung 750 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
750+7.9 EUR
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PVA3054NS-TPBF pva30n.pdf?fileId=5546d462533600a4015356839c762923
PVA3054NS-TPBF
Hersteller: Infineon Technologies
Description: SSR RELAY SPST-NO 50MA 0-300V
Relay Type: Photo-Coupled Relay (Photorelay)
Approval Agency: UL
Operating Temperature: -40°C ~ 85°C
On-State Resistance (Max): 160 Ohms
Voltage - Load: 0 V ~ 300 V
Part Status: Active
Supplier Device Package: 8-SMD
Load Current: 50 mA
Termination Style: Gull Wing
Circuit: SPST-NO (1 Form A)
Voltage - Input: 1.2VDC
Mounting Type: Surface Mount
Output Type: AC, DC
Package / Case: 8-SMD (0.300", 7.62mm), 4 Leads
Packaging: Cut Tape (CT)
auf Bestellung 1485 Stücke:
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AnzahlPrivatkunde
2+12.96 EUR
10+11.55 EUR
25+11.03 EUR
50+10.66 EUR
100+10.29 EUR
250+9.83 EUR
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FM25CL64B-DGTR Infineon-FM25CL64B_64-Kbit_(8_K_8)_Serial_(SPI)_F-RAM-DataSheet-v11_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ebdfcd83119&utm_source=cypress&utm_medium=referral&utm_campaign=202110_globe_en_all_integration-files
FM25CL64B-DGTR
Hersteller: Infineon Technologies
Description: IC FRAM 64KBIT SPI 20MHZ 8DFN
DigiKey Programmable: Not Verified
Memory Organization: 8K x 8
Memory Interface: SPI
Part Status: Active
Supplier Device Package: 8-DFN (4x4.5)
Memory Format: FRAM
Clock Frequency: 20 MHz
Technology: FRAM (Ferroelectric RAM)
Voltage - Supply: 2.7V ~ 3.6V
Operating Temperature: -40°C ~ 85°C (TA)
Memory Type: Non-Volatile
Memory Size: 64Kbit
Mounting Type: Surface Mount
Package / Case: 8-WDFN Exposed Pad
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar
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FM25CL64B-DGTR Infineon-FM25CL64B_64-Kbit_(8_K_8)_Serial_(SPI)_F-RAM-DataSheet-v11_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ebdfcd83119&utm_source=cypress&utm_medium=referral&utm_campaign=202110_globe_en_all_integration-files
FM25CL64B-DGTR
Hersteller: Infineon Technologies
Description: IC FRAM 64KBIT SPI 20MHZ 8DFN
Clock Frequency: 20 MHz
Technology: FRAM (Ferroelectric RAM)
Voltage - Supply: 2.7V ~ 3.6V
Operating Temperature: -40°C ~ 85°C (TA)
Memory Type: Non-Volatile
Memory Size: 64Kbit
Mounting Type: Surface Mount
Package / Case: 8-WDFN Exposed Pad
Packaging: Cut Tape (CT)
DigiKey Programmable: Not Verified
Memory Organization: 8K x 8
Memory Interface: SPI
Part Status: Active
Supplier Device Package: 8-DFN (4x4.5)
Memory Format: FRAM
auf Bestellung 2475 Stücke:
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5+5.07 EUR
10+4.74 EUR
25+4.59 EUR
50+4.5 EUR
100+4.39 EUR
250+4.25 EUR
500+4.14 EUR
1000+4.05 EUR
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TLE4678GMXUMA2 Infineon-TLE4678-DS-v01_20-EN.pdf?fileId=5546d46259d9a4bf0159f9d6f7333ee6
TLE4678GMXUMA2
Hersteller: Infineon Technologies
Description: IC REG LINEAR 5V 200MA PG-DSO-14
Qualification: AEC-Q100
Grade: Automotive
Current - Supply (Max): 8 mA
Protection Features: Over Current, Over Temperature, Reverse Polarity, Short Circuit
Voltage Dropout (Max): 0.35V @ 150mA
PSRR: 65dB (100Hz)
Part Status: Active
Control Features: Reset, Watchdog
Voltage - Output (Min/Fixed): 5V
Supplier Device Package: PG-DSO-14
Number of Regulators: 1
Voltage - Input (Max): 45V
Current - Quiescent (Iq): 80 µA
Output Configuration: Positive
Operating Temperature: -40°C ~ 150°C
Current - Output: 200mA
Mounting Type: Surface Mount
Output Type: Fixed
Package / Case: 14-SOIC (0.154", 3.90mm Width)
Packaging: Tape & Reel (TR)
auf Bestellung 2500 Stücke:
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2500+1.86 EUR
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TLE4678GMXUMA2 Infineon-TLE4678-DS-v01_20-EN.pdf?fileId=5546d46259d9a4bf0159f9d6f7333ee6
TLE4678GMXUMA2
Hersteller: Infineon Technologies
Description: IC REG LINEAR 5V 200MA PG-DSO-14
Qualification: AEC-Q100
Grade: Automotive
Current - Quiescent (Iq): 80 µA
Output Configuration: Positive
Operating Temperature: -40°C ~ 150°C
Current - Output: 200mA
Mounting Type: Surface Mount
Output Type: Fixed
Package / Case: 14-SOIC (0.154", 3.90mm Width)
Packaging: Cut Tape (CT)
Current - Supply (Max): 8 mA
Protection Features: Over Current, Over Temperature, Reverse Polarity, Short Circuit
Voltage Dropout (Max): 0.35V @ 150mA
PSRR: 65dB (100Hz)
Part Status: Active
Control Features: Reset, Watchdog
Voltage - Output (Min/Fixed): 5V
Supplier Device Package: PG-DSO-14
Number of Regulators: 1
Voltage - Input (Max): 45V
auf Bestellung 2500 Stücke:
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T1190N16TOFVTXPSA1 Infineon-T1190N-DS-v02_00-en_de.pdf?fileId=db3a304323b87bc20123ffba89405c02
T1190N16TOFVTXPSA1
Hersteller: Infineon Technologies
Description: SCR MODULE 1.8KV 2800A TO-200AC
Voltage - Off State: 1.8 kV
Current - On State (It (RMS)) (Max): 2800 A
Part Status: Active
Voltage - Gate Trigger (Vgt) (Max): 2 V
Current - On State (It (AV)) (Max): 1190 A
Number of SCRs, Diodes: 1 SCR
Current - Non Rep. Surge 50, 60Hz (Itsm): 22500A @ 50Hz
Current - Gate Trigger (Igt) (Max): 250 mA
Current - Hold (Ih) (Max): 500 mA
Structure: Single
Operating Temperature: -40°C ~ 125°C
Mounting Type: Clamp On
Package / Case: TO-200AC
Packaging: Tray
Produkt ist nicht verfügbar
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T1190N14TOFVTXPSA1 Infineon-T1190N-DS-v02_00-en_de.pdf?fileId=db3a304323b87bc20123ffba89405c02
T1190N14TOFVTXPSA1
Hersteller: Infineon Technologies
Description: SCR MODULE 1.8KV 2800A TO-200AC
Voltage - Off State: 1.8 kV
Current - On State (It (RMS)) (Max): 2800 A
Part Status: Active
Voltage - Gate Trigger (Vgt) (Max): 2 V
Current - On State (It (AV)) (Max): 1190 A
Number of SCRs, Diodes: 1 SCR
Current - Non Rep. Surge 50, 60Hz (Itsm): 22500A @ 50Hz
Current - Gate Trigger (Igt) (Max): 250 mA
Current - Hold (Ih) (Max): 500 mA
Structure: Single
Operating Temperature: -40°C ~ 125°C
Mounting Type: Clamp On
Package / Case: TO-200AC
Packaging: Tray
auf Bestellung 3 Stücke:
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AnzahlPrivatkunde
1+510.81 EUR
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IPDQ60R017S7AXTMA1 Infineon-IPDQ60R017S7A-DataSheet-v02_00-EN.pdf?fileId=8ac78c8c850f4bee018513cc675f681b
IPDQ60R017S7AXTMA1
Hersteller: Infineon Technologies
Description: MOSFET
Packaging: Tape & Reel (TR)
Package / Case: 22-PowerBSOP Module
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 30A (Tc)
Rds On (Max) @ Id, Vgs: 17mOhm @ 29A, 12V
Power Dissipation (Max): 500W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 1.89mA
Supplier Device Package: PG-HDSOP-22-1
Grade: Automotive
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 12V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 196 nC @ 12 V
Input Capacitance (Ciss) (Max) @ Vds: 7370 pF @ 300 V
Qualification: AEC-Q101
Produkt ist nicht verfügbar
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IPDQ60R017S7AXTMA1 Infineon-IPDQ60R017S7A-DataSheet-v02_00-EN.pdf?fileId=8ac78c8c850f4bee018513cc675f681b
IPDQ60R017S7AXTMA1
Hersteller: Infineon Technologies
Description: MOSFET
Packaging: Cut Tape (CT)
Package / Case: 22-PowerBSOP Module
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 30A (Tc)
Rds On (Max) @ Id, Vgs: 17mOhm @ 29A, 12V
Power Dissipation (Max): 500W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 1.89mA
Supplier Device Package: PG-HDSOP-22-1
Grade: Automotive
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 12V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 196 nC @ 12 V
Input Capacitance (Ciss) (Max) @ Vds: 7370 pF @ 300 V
Qualification: AEC-Q101
auf Bestellung 748 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
1+25.85 EUR
10+21.88 EUR
100+18.93 EUR
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IPDQ60R017S7XTMA1 Infineon-IPDQ60R017S7-DataSheet-v02_00-EN.pdf?fileId=8ac78c8c850f4bee018513cc5a686818
IPDQ60R017S7XTMA1
Hersteller: Infineon Technologies
Description: MOSFET
Packaging: Tape & Reel (TR)
Package / Case: 22-PowerBSOP Module
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 30A (Tc)
Rds On (Max) @ Id, Vgs: 17mOhm @ 29A, 12V
Power Dissipation (Max): 500W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 1.89mA
Supplier Device Package: PG-HDSOP-22-1
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 12V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 196 nC @ 12 V
Input Capacitance (Ciss) (Max) @ Vds: 7370 pF @ 300 V
Produkt ist nicht verfügbar
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IPDQ60R017S7XTMA1 Infineon-IPDQ60R017S7-DataSheet-v02_00-EN.pdf?fileId=8ac78c8c850f4bee018513cc5a686818
IPDQ60R017S7XTMA1
Hersteller: Infineon Technologies
Description: MOSFET
Packaging: Cut Tape (CT)
Package / Case: 22-PowerBSOP Module
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 30A (Tc)
Rds On (Max) @ Id, Vgs: 17mOhm @ 29A, 12V
Power Dissipation (Max): 500W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 1.89mA
Supplier Device Package: PG-HDSOP-22-1
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 12V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 196 nC @ 12 V
Input Capacitance (Ciss) (Max) @ Vds: 7370 pF @ 300 V
auf Bestellung 686 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
1+24.94 EUR
10+21.05 EUR
100+18.2 EUR
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IPDQ60R040S7AXTMA1 Infineon-IPDQ60R040S7A-DataSheet-v02_00-EN.pdf?fileId=8ac78c8c850f4bee018513cc80766821
IPDQ60R040S7AXTMA1
Hersteller: Infineon Technologies
Description: MOSFET
Packaging: Tape & Reel (TR)
Package / Case: 22-PowerBSOP Module
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 14A (Tc)
Rds On (Max) @ Id, Vgs: 40mOhm @ 13A, 12V
Power Dissipation (Max): 272W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 790µA
Supplier Device Package: PG-HDSOP-22-1
Grade: Automotive
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 12V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 83 nC @ 12 V
Qualification: AEC-Q101
Produkt ist nicht verfügbar
Mindestbestellmenge: 750 Stücke
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IPDQ60R040S7AXTMA1 Infineon-IPDQ60R040S7A-DataSheet-v02_00-EN.pdf?fileId=8ac78c8c850f4bee018513cc80766821
IPDQ60R040S7AXTMA1
Hersteller: Infineon Technologies
Description: MOSFET
Packaging: Cut Tape (CT)
Package / Case: 22-PowerBSOP Module
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 14A (Tc)
Rds On (Max) @ Id, Vgs: 40mOhm @ 13A, 12V
Power Dissipation (Max): 272W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 790µA
Supplier Device Package: PG-HDSOP-22-1
Grade: Automotive
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 12V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 83 nC @ 12 V
Qualification: AEC-Q101
auf Bestellung 720 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
2+17.36 EUR
10+11.88 EUR
100+8.77 EUR
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IPDQ60R045CFD7XTMA1 Infineon-IPDQ60R045CFD7-DataSheet-v02_00-EN.pdf?fileId=8ac78c8c8412f8d3018465c80ad309dd
IPDQ60R045CFD7XTMA1
Hersteller: Infineon Technologies
Description: HIGH POWER_NEW PG-HDSOP-22
Packaging: Cut Tape (CT)
Package / Case: 22-PowerBSOP Module
Mounting Type: Surface Mount
Technology: MOSFET (Metal Oxide)
Supplier Device Package: PG-HDSOP-22-1
Part Status: Active
Drain to Source Voltage (Vdss): 600 V
auf Bestellung 750 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
2+14.39 EUR
10+11.1 EUR
25+10.28 EUR
100+9.38 EUR
250+8.95 EUR
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IPDQ60R075CFD7XTMA1 Infineon-IPDQ60R075CFD7-DataSheet-v02_00-EN.pdf?fileId=8ac78c8c8412f8d3018465868a09094e
IPDQ60R075CFD7XTMA1
Hersteller: Infineon Technologies
Description: HIGH POWER_NEW PG-HDSOP-22
Packaging: Cut Tape (CT)
Package / Case: 22-PowerBSOP Module
Mounting Type: Surface Mount
Technology: MOSFET (Metal Oxide)
Supplier Device Package: PG-HDSOP-22-1
Part Status: Active
Drain to Source Voltage (Vdss): 600 V
auf Bestellung 750 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
3+10.28 EUR
10+7.84 EUR
25+7.22 EUR
100+6.56 EUR
250+6.24 EUR
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IPDQ65R060CFD7XTMA1 Infineon-IPDQ65R060CFD7-DataSheet-v02_00-EN.pdf?fileId=8ac78c8c869190210186e3ff7193778b
IPDQ65R060CFD7XTMA1
Hersteller: Infineon Technologies
Description: HIGH POWER_NEW
Packaging: Tape & Reel (TR)
Package / Case: 22-PowerBSOP Module
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 45A (Tc)
Rds On (Max) @ Id, Vgs: 60mOhm @ 16.4A, 10V
Power Dissipation (Max): 272W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 820µA
Supplier Device Package: PG-HDSOP-22-1
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 65 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3288 pF @ 400 V
Produkt ist nicht verfügbar
Mindestbestellmenge: 750 Stücke
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IPDQ65R125CFD7XTMA1 Infineon-IPDQ65R125CFD7-DataSheet-v02_01-EN.pdf?fileId=8ac78c8c869190210186e4089b4677d5
IPDQ65R125CFD7XTMA1
Hersteller: Infineon Technologies
Description: HIGH POWER_NEW
Packaging: Tape & Reel (TR)
Package / Case: 22-PowerBSOP Module
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 24A (Tc)
Rds On (Max) @ Id, Vgs: 125mOhm @ 7.8A, 10V
Power Dissipation (Max): 160W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 390µA
Supplier Device Package: PG-HDSOP-22-1
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 32 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1566 pF @ 400 V
Produkt ist nicht verfügbar
Mindestbestellmenge: 750 Stücke
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IPDQ65R029CFD7XTMA1 Infineon-IPDQ65R029CFD7-DataSheet-v02_00-EN.pdf?fileId=8ac78c8c869190210186e047429d71e3
IPDQ65R029CFD7XTMA1
Hersteller: Infineon Technologies
Description: HIGH POWER_NEW
Packaging: Tape & Reel (TR)
Package / Case: 22-PowerBSOP Module
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 85A (Tc)
Rds On (Max) @ Id, Vgs: 29mOhm @ 35.8A, 10V
Power Dissipation (Max): 463W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 1.79mA
Supplier Device Package: PG-HDSOP-22-1
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 139 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 7149 pF @ 400 V
Produkt ist nicht verfügbar
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IPDQ65R017CFD7XTMA1 Infineon-IPDQ65R017CFD7-DataSheet-v02_00-EN.pdf?fileId=8ac78c8c869190210186e047325971e0
IPDQ65R017CFD7XTMA1
Hersteller: Infineon Technologies
Description: HIGH POWER_NEW
Packaging: Tape & Reel (TR)
Package / Case: 22-PowerBSOP Module
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 136A (Tc)
Rds On (Max) @ Id, Vgs: 17mOhm @ 61.6A, 10V
Power Dissipation (Max): 694W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 3.08mA
Supplier Device Package: PG-HDSOP-22-1
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 236 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 12338 pF @ 400 V
Produkt ist nicht verfügbar
Mindestbestellmenge: 750 Stücke
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IPDQ65R040CFD7XTMA1 Infineon-IPDQ65R040CFD7-DataSheet-v02_00-EN.pdf?fileId=8ac78c8c869190210186e3ff5dfe7788
IPDQ65R040CFD7XTMA1
Hersteller: Infineon Technologies
Description: HIGH POWER_NEW
Packaging: Tape & Reel (TR)
Package / Case: 22-PowerBSOP Module
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 64A (Tc)
Rds On (Max) @ Id, Vgs: 40mOhm @ 24.8A, 10V
Power Dissipation (Max): 357W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 1.24mA
Supplier Device Package: PG-HDSOP-22-1
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 97 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4975 pF @ 400 V
Produkt ist nicht verfügbar
Mindestbestellmenge: 750 Stücke
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TLE5014SP16DE0002XUMA1 Infineon-TLE5014SP16D+E0002-DataSheet-v01_00-EN.pdf?fileId=5546d46270c4f93e0170c92e1bc10212
TLE5014SP16DE0002XUMA1
Hersteller: Infineon Technologies
Description: POSITION&CURRENT SENSORS
Packaging: Cut Tape (CT)
Part Status: Active
auf Bestellung 2445 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
2+20.21 EUR
10+13.93 EUR
100+10.75 EUR
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DF14MR12W1M1HFB67BPSA1 DF14MR12W1M1HF_B67_DS.pdf
DF14MR12W1M1HFB67BPSA1
Hersteller: Infineon Technologies
Description: MOSFET 1200V AG-EASY1B
Part Status: Active
Supplier Device Package: AG-EASY1B
Drain to Source Voltage (Vdss): 1200V (1.2kV)
Technology: Silicon Carbide (SiC)
Mounting Type: Chassis Mount
Package / Case: Module
Packaging: Tray
auf Bestellung 24 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
1+136.18 EUR
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IR2133STRPBF IRSDS12168-1.pdf?t.download=true&u=5oefqw
IR2133STRPBF
Hersteller: Infineon Technologies
Description: IC GATE DRVR HALF-BRIDGE 28SOIC
Packaging: Tape & Reel (TR)
Package / Case: 28-SOIC (0.295", 7.50mm Width)
Mounting Type: Surface Mount
Operating Temperature: 125°C (TJ)
Voltage - Supply: 10V ~ 20V
Input Type: Inverting
High Side Voltage - Max (Bootstrap): 600 V
Supplier Device Package: 28-SOIC
Rise / Fall Time (Typ): 90ns, 40ns
Channel Type: 3-Phase
Driven Configuration: Half-Bridge
Number of Drivers: 6
Gate Type: IGBT, MOSFET (N-Channel)
Logic Voltage - VIL, VIH: 0.8V, 2.2V
Current - Peak Output (Source, Sink): 250mA, 500mA
Part Status: Active
DigiKey Programmable: Not Verified
auf Bestellung 2000 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
1000+4.58 EUR
2000+4.47 EUR
Mindestbestellmenge: 1000 Stücke
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IR2133STRPBF IRSDS12168-1.pdf?t.download=true&u=5oefqw
IR2133STRPBF
Hersteller: Infineon Technologies
Description: IC GATE DRVR HALF-BRIDGE 28SOIC
Packaging: Cut Tape (CT)
Package / Case: 28-SOIC (0.295", 7.50mm Width)
Mounting Type: Surface Mount
Operating Temperature: 125°C (TJ)
Voltage - Supply: 10V ~ 20V
Input Type: Inverting
High Side Voltage - Max (Bootstrap): 600 V
Supplier Device Package: 28-SOIC
Rise / Fall Time (Typ): 90ns, 40ns
Channel Type: 3-Phase
Driven Configuration: Half-Bridge
Number of Drivers: 6
Gate Type: IGBT, MOSFET (N-Channel)
Logic Voltage - VIL, VIH: 0.8V, 2.2V
Current - Peak Output (Source, Sink): 250mA, 500mA
Part Status: Active
DigiKey Programmable: Not Verified
auf Bestellung 2118 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
3+8.21 EUR
10+6.2 EUR
25+5.69 EUR
100+5.14 EUR
250+4.88 EUR
500+4.71 EUR
Mindestbestellmenge: 3 Stücke
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FM33256B-G Infineon-FM33256B_256-Kbit_(32_K_8)_Integrated_Processor_Companion_with_F-RAM-DataSheet-v04_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ec926014192
FM33256B-G
Hersteller: Infineon Technologies
Description: IC PROCESSOR COMPANION 14SOIC
Packaging: Tube
Package / Case: 14-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Type: Processor Companion
Applications: Processor-Based Systems
Supplier Device Package: 14-SOIC
Part Status: Discontinued at Digi-Key
DigiKey Programmable: Not Verified
Produkt ist nicht verfügbar
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CY15V104QN-50LPXIT Infineon-CY15B104QN_CY15V104QN_Excelon(TM)_LP_4-Mbit_(512K_X_8)_Serial_(SPI)_F-RAM-DataSheet-v14_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ee7709b704a
Hersteller: Infineon Technologies
Description: IC FRAM 4MBIT SPI 50MHZ 8GQFN
Packaging: Tape & Reel (TR)
Package / Case: 8-UQFN
Mounting Type: Surface Mount
Memory Size: 4Mbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 1.71V ~ 1.89V
Technology: FRAM (Ferroelectric RAM)
Clock Frequency: 50 MHz
Memory Format: FRAM
Supplier Device Package: 8-GQFN (3.23x3.28)
Part Status: Active
Memory Interface: SPI
Access Time: 8 ns
Memory Organization: 512K x 8
DigiKey Programmable: Not Verified
Produkt ist nicht verfügbar
Mindestbestellmenge: 2500 Stücke
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IPD60R180P7SE8228AUMA1 infineon-ipd60r180p7s-datasheet-en.pdf
IPD60R180P7SE8228AUMA1
Hersteller: Infineon Technologies
Description: MOSFET N-CH 600V 18A TO252-3
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 18A (Tc)
Rds On (Max) @ Id, Vgs: 180mOhm @ 5.6A, 10V
Power Dissipation (Max): 72W (Tc)
Vgs(th) (Max) @ Id: 4V @ 280µA
Supplier Device Package: PG-TO252-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 25 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1081 pF @ 400 V
Produkt ist nicht verfügbar
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IPA70R360P7SXKSA1 Infineon-IPA70R360P7S-DS-v02_00-EN.pdf?fileId=5546d462584d1d4a0158cf777f5b0d77
IPA70R360P7SXKSA1
Hersteller: Infineon Technologies
Description: MOSFET N-CH 700V 12.5A TO220
Packaging: Tube
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 12.5A (Tc)
Rds On (Max) @ Id, Vgs: 360mOhm @ 3A, 10V
Power Dissipation (Max): 26.4W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 150µA
Supplier Device Package: PG-TO220 Full Pack
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±16V
Drain to Source Voltage (Vdss): 700 V
Gate Charge (Qg) (Max) @ Vgs: 16.4 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 517 pF @ 400 V
Produkt ist nicht verfügbar
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S6E2C39H0AGV2000A download
S6E2C39H0AGV2000A
Hersteller: Infineon Technologies
Description: IC MCU 32BIT 1.5MB FLASH 144LQFP
Packaging: Tray
Package / Case: 144-LQFP
Mounting Type: Surface Mount
Speed: 200MHz
Program Memory Size: 1.5MB (1.5M x 8)
RAM Size: 192K x 8
Operating Temperature: -40°C ~ 125°C (TA)
Oscillator Type: Internal
Program Memory Type: FLASH
Core Processor: ARM® Cortex®-M4F
Data Converters: A/D 24x12b; D/A 2x12b
Core Size: 32-Bit Single-Core
Voltage - Supply (Vcc/Vdd): 2.7V ~ 5.5V
Connectivity: CSIO, EBI/EMI, I²C, LINbus, SD, UART/USART, USB
Peripherals: DMA, LVD, POR, PWM, WDT
Supplier Device Package: 144-LQFP (20x20)
Part Status: Active
Number of I/O: 120
DigiKey Programmable: Not Verified
Produkt ist nicht verfügbar
Mindestbestellmenge: 600 Stücke
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AUIRFS4010 auirfs4010.pdf?fileId=5546d462533600a4015355b6a9e114c3
AUIRFS4010
Hersteller: Infineon Technologies
Description: MOSFET N-CH 100V 180A D2PAK
Packaging: Tube
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 180A (Tc)
Rds On (Max) @ Id, Vgs: 4.7mOhm @ 106A, 10V
Power Dissipation (Max): 375W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: PG-TO263-3
Grade: Automotive
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 215 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 9575 pF @ 50 V
Qualification: AEC-Q101
Produkt ist nicht verfügbar
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MB91306RPFV-G-SNE1
Hersteller: Infineon Technologies
Description: IC ANALOG
Packaging: Bulk
Package / Case: 120-LQFP
Mounting Type: Surface Mount
Speed: 66MHz
RAM Size: 64K x 8
Operating Temperature: 0°C ~ 70°C
Oscillator Type: External
Program Memory Type: ROMless
Core Processor: FR60 RISC
Data Converters: A/D 4x10b
Core Size: 32-Bit Single-Core
Voltage - Supply (Vcc/Vdd): 1.65V ~ 1.95V, 3V ~ 3.6V
Connectivity: EBI/EMI, I²C, UART/USART
Peripherals: DMA, POR, WDT
Supplier Device Package: 120-LQFP (16x16)
Part Status: Obsolete
Number of I/O: 69
DigiKey Programmable: Not Verified
Produkt ist nicht verfügbar
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CY15V108QI-20LPXIT Infineon-CY15B108QI_CY15V108QI_Excelon(TM)_LP_8-Mbit_(1024K_X_8)_Serial_(SPI)_F-RAM-DataSheet-v15_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ee73ee37021
Hersteller: Infineon Technologies
Description: IC FRAM 8MBIT SPI 20MHZ 8GQFN
DigiKey Programmable: Not Verified
Memory Organization: 1M x 8
Access Time: 20 ns
Memory Interface: SPI
Part Status: Active
Supplier Device Package: 8-GQFN (3.23x3.28)
Memory Format: FRAM
Clock Frequency: 20 MHz
Technology: FRAM (Ferroelectric RAM)
Voltage - Supply: 1.71V ~ 1.89V
Operating Temperature: -40°C ~ 85°C (TA)
Memory Type: Non-Volatile
Memory Size: 8Mbit
Mounting Type: Surface Mount
Package / Case: 8-UQFN
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar
Mindestbestellmenge: 2500 Stücke
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IKCM20L60GAXKMA1 Infineon-IKCM20L60GA-DS-v01_01-EN.pdf?fileId=5546d4624fb7fef2014fcb7a6f8e7902
IKCM20L60GAXKMA1
Hersteller: Infineon Technologies
Description: IFPS MODULES 24MDIP
Packaging: Tube
Package / Case: 24-PowerDIP Module (1.028", 26.10mm)
Mounting Type: Through Hole
Type: IGBT
Configuration: 3 Phase
Voltage - Isolation: 2000Vrms
Part Status: Active
Current: 20 A
Voltage: 600 V
auf Bestellung 38 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
1+24.86 EUR
14+19.06 EUR
28+18.14 EUR
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IKCM15L60GAXKMA1 Infineon-IKCM15L60GA-DS-v01_02-EN.pdf?fileId=5546d4624fb7fef2014fcb71486178f7
IKCM15L60GAXKMA1
Hersteller: Infineon Technologies
Description: IGBT IPM 600V 15A 24-PWRDIP MOD
Packaging: Tube
Package / Case: 24-PowerDIP Module (1.028", 26.10mm)
Mounting Type: Through Hole
Type: IGBT
Configuration: 3 Phase
Voltage - Isolation: 2000Vrms
Part Status: Active
Current: 15 A
Voltage: 600 V
auf Bestellung 270 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
2+20.15 EUR
14+15.35 EUR
28+14.58 EUR
112+13.41 EUR
252+12.91 EUR
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IKCM10L60GAXKMA1 Infineon-IKCM10L60GA-DS-v01_01-EN.pdf?fileId=5546d4624fb7fef2014fcb3a61b278a2
IKCM10L60GAXKMA1
Hersteller: Infineon Technologies
Description: IGBT IPM 600V 10A 24-PWRDIP MOD
Packaging: Tube
Package / Case: 24-PowerDIP Module (1.028", 26.10mm)
Mounting Type: Through Hole
Type: IGBT
Configuration: 3 Phase
Voltage - Isolation: 2000Vrms
Part Status: Active
Current: 10 A
Voltage: 600 V
Produkt ist nicht verfügbar
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IPP60R280CFD7XKSA1 Infineon-IPP60R280CFD7-DS-v02_00-EN.pdf?fileId=5546d4625e763904015ea850969a78ae
IPP60R280CFD7XKSA1
Hersteller: Infineon Technologies
Description: MOSFET N-CH 650V 9A TO220-3
Input Capacitance (Ciss) (Max) @ Vds: 807 pF @ 400 V
Gate Charge (Qg) (Max) @ Vgs: 18 nC @ 10 V
Drain to Source Voltage (Vdss): 650 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Active
Supplier Device Package: PG-TO220-3
Vgs(th) (Max) @ Id: 4.5V @ 180µA
Power Dissipation (Max): 52W (Tc)
Rds On (Max) @ Id, Vgs: 280mOhm @ 3.6A, 10V
Current - Continuous Drain (Id) @ 25°C: 9A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-220-3
Packaging: Tube
auf Bestellung 288 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
5+4.99 EUR
50+2.45 EUR
100+2.25 EUR
Mindestbestellmenge: 5 Stücke
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IPB120N10S403ATMA1 IPP_B_I120N10S4-03-Data-Sheet-10-Infineon.pdf?fileId=5546d46147a9c2e401480c5c81580b3a
IPB120N10S403ATMA1
Hersteller: Infineon Technologies
Description: MOSFET N-CH 100V 120A D2PAK
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 120A (Tc)
Rds On (Max) @ Id, Vgs: 3.5mOhm @ 100A, 10V
Power Dissipation (Max): 250W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 180µA
Supplier Device Package: PG-TO263-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 140 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 10120 pF @ 25 V
Grade: Automotive
Qualification: AEC-Q101
auf Bestellung 1000 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
1000+3.64 EUR
Mindestbestellmenge: 1000 Stücke
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IPB120N10S403ATMA1 IPP_B_I120N10S4-03-Data-Sheet-10-Infineon.pdf?fileId=5546d46147a9c2e401480c5c81580b3a
IPB120N10S403ATMA1
Hersteller: Infineon Technologies
Description: MOSFET N-CH 100V 120A D2PAK
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 120A (Tc)
Rds On (Max) @ Id, Vgs: 3.5mOhm @ 100A, 10V
Power Dissipation (Max): 250W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 180µA
Supplier Device Package: PG-TO263-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 140 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 10120 pF @ 25 V
Grade: Automotive
Qualification: AEC-Q101
auf Bestellung 1049 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
3+10.01 EUR
10+6.64 EUR
50+5.19 EUR
100+4.72 EUR
500+3.9 EUR
Mindestbestellmenge: 3 Stücke
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IPP120N10S405AKSA1 IPP_B_I120N10S4-05-Data-Sheet-10-Infineon.pdf?fileId=5546d46147a9c2e401480cf161070b67
IPP120N10S405AKSA1
Hersteller: Infineon Technologies
Description: MOSFET N-CH 100V 120A TO220-3
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 120A (Tc)
Rds On (Max) @ Id, Vgs: 5.3mOhm @ 100A, 10V
Power Dissipation (Max): 190W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 120µA
Supplier Device Package: PG-TO220-3-1
Grade: Automotive
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 91 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 6540 pF @ 25 V
Qualification: AEC-Q101
Produkt ist nicht verfügbar
Mindestbestellmenge: 7000 Stücke
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