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24VSHIELDBTT6030TOBO1 24VSHIELDBTT6030TOBO1 Infineon Technologies Infineon-24V%20protected%20switch%20shield_PB.pdf-PB-v01_00-EN.pdf?fileId=5546d46255dd933d015601e282682ac5 Description: EVAL 24V PROTECT SWITCH SHIELD
Packaging: Bulk
Function: Switch
Type: Power Management
Contents: Board(s)
Utilized IC / Part: BTT6020-1ERA, BTT6030-2ERA
Platform: Arduino
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CY8C4245LTI-M445 CY8C4245LTI-M445 Infineon Technologies download Description: IC MCU 32BIT 32KB FLASH 68QFN
Packaging: Tray
Package / Case: 68-VFQFN Exposed Pad
Mounting Type: Surface Mount
Speed: 48MHz
Program Memory Size: 32KB (32K x 8)
RAM Size: 4K x 8
Operating Temperature: -40°C ~ 85°C (TA)
Oscillator Type: Internal
Program Memory Type: FLASH
Core Processor: ARM® Cortex®-M0
Data Converters: A/D 16x12b
Core Size: 32-Bit
Voltage - Supply (Vcc/Vdd): 1.71V ~ 5.5V
Connectivity: I2C, IrDA, LINbus, Microwire, SmartCard, SPI, SSP, UART/USART
Peripherals: Brown-out Detect/Reset, Cap Sense, LCD, LVD, POR, PWM, SmartSense, WDT
Supplier Device Package: 68-QFN (8x8)
Number of I/O: 55
DigiKey Programmable: Not Verified
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IPB60R280CFD7ATMA1 IPB60R280CFD7ATMA1 Infineon Technologies Infineon-IPB60R280CFD7-DataSheet-v02_00-EN.pdf?fileId=5546d4626b2d8e69016bb2a0d76e1ac5 Description: MOSFET N-CH 600V 9A TO263-3-2
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 9A (Tc)
Rds On (Max) @ Id, Vgs: 280mOhm @ 3.6A, 10V
Power Dissipation (Max): 51W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 180µA
Supplier Device Package: PG-TO263-3-2
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 18 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 807 pF @ 400 V
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IPD60R280P7SE8228AUMA1 IPD60R280P7SE8228AUMA1 Infineon Technologies infineon-ipd60r280p7-datasheet-en.pdf Description: MOSFET N-CH 600V 12A TO252-3
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 12A (Tc)
Rds On (Max) @ Id, Vgs: 280mOhm @ 3.8A, 10V
Power Dissipation (Max): 53W (Tc)
Vgs(th) (Max) @ Id: 4V @ 190µA
Supplier Device Package: PG-TO252-3
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 18 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 761 pF @ 400 V
Produkt ist nicht verfügbar
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IPS60R280PFD7SAKMA1 IPS60R280PFD7SAKMA1 Infineon Technologies Infineon-IPS60R280PFD7S-DataSheet-v02_00-EN.pdf?fileId=5546d4626eab8fbf016ed5dc2db339cc Description: CONSUMER PG-TO251-3
Packaging: Bulk
Package / Case: TO-251-3 Short Leads, IPak, TO-251AA
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 12A (Tc)
Rds On (Max) @ Id, Vgs: 280mOhm @ 3.6A, 10V
Power Dissipation (Max): 51W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 180µA
Supplier Device Package: PG-TO251-3
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 15.3 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 656 pF @ 400 V
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IPA60R280P7SE8228XKSA1 IPA60R280P7SE8228XKSA1 Infineon Technologies infineon-ipa60r280p7-datasheet-en.pdf Description: MOSFET N-CH 600V 12A TO220
Packaging: Bulk
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 12A (Tc)
Rds On (Max) @ Id, Vgs: 280mOhm @ 3.8A, 10V
Power Dissipation (Max): 24W (Tc)
Vgs(th) (Max) @ Id: 4V @ 190µA
Supplier Device Package: PG-TO220-FP
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 18 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 761 pF @ 400 V
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IPA60R280P7SE8228XKSA1 IPA60R280P7SE8228XKSA1 Infineon Technologies infineon-ipa60r280p7-datasheet-en.pdf Description: MOSFET N-CH 600V 12A TO220
Packaging: Tube
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 12A (Tc)
Rds On (Max) @ Id, Vgs: 280mOhm @ 3.8A, 10V
Power Dissipation (Max): 24W (Tc)
Vgs(th) (Max) @ Id: 4V @ 190µA
Supplier Device Package: PG-TO220-FP
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 18 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 761 pF @ 400 V
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IPA60R280C6XKSA1 IPA60R280C6XKSA1 Infineon Technologies IPA60R280C6_2_1.pdf?folderId=db3a3043163797a6011638933eda014b&fileId=db3a30432313ff5e01239ddb46a66f73 Description: MOSFET N-CH 600V 13.8A TO220-FP
Packaging: Tube
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 13.8A (Tc)
Rds On (Max) @ Id, Vgs: 280mOhm @ 6.5A, 10V
Power Dissipation (Max): 32W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 430µA
Supplier Device Package: PG-TO220-FP
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 43 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 950 pF @ 100 V
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IPP60R280E6XKSA1 IPP60R280E6XKSA1 Infineon Technologies IPP60R280E6_2.0.pdf?folderId=db3a3043163797a6011638933eda014b&fileId=db3a304327b8975001281fa6ed7144f7 Description: MOSFET N-CH 600V 13.8A TO220-3
Packaging: Bulk
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 13.8A (Tc)
Rds On (Max) @ Id, Vgs: 280mOhm @ 6.5A, 10V
Power Dissipation (Max): 104W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 430µA
Supplier Device Package: PG-TO220-3
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 43 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 950 pF @ 100 V
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IPD380P06NMATMA1 IPD380P06NMATMA1 Infineon Technologies Infineon-IPD380P06NM-DS-v02_00-EN.pdf?fileId=5546d46269e1c019016a03e2ea8300b7 Description: MOSFET P-CH 60V 35A TO252-3
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 35A (Tc)
Rds On (Max) @ Id, Vgs: 38mOhm @ 35A, 10V
Power Dissipation (Max): 125W (Tc)
Vgs(th) (Max) @ Id: 4V @ 1.7mA
Supplier Device Package: PG-TO252-3
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 63 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2500 pF @ 30 V
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IR21091STRPBF IR21091STRPBF Infineon Technologies ir21091.pdf?fileId=5546d462533600a4015355c7f66f167c Description: IC GATE DRVR HALF-BRIDGE 8SOIC
DigiKey Programmable: Not Verified
Current - Peak Output (Source, Sink): 200mA, 350mA
Logic Voltage - VIL, VIH: 0.8V, 2.9V
Gate Type: IGBT, MOSFET (N-Channel)
Number of Drivers: 2
Driven Configuration: Half-Bridge
Channel Type: Synchronous
Rise / Fall Time (Typ): 150ns, 50ns
Supplier Device Package: 8-SOIC
High Side Voltage - Max (Bootstrap): 600 V
Input Type: Non-Inverting
Voltage - Supply: 10V ~ 20V
Operating Temperature: -40°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Packaging: Tape & Reel (TR)
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IR21091STRPBF IR21091STRPBF Infineon Technologies ir21091.pdf?fileId=5546d462533600a4015355c7f66f167c Description: IC GATE DRVR HALF-BRIDGE 8SOIC
DigiKey Programmable: Not Verified
Current - Peak Output (Source, Sink): 200mA, 350mA
Logic Voltage - VIL, VIH: 0.8V, 2.9V
Gate Type: IGBT, MOSFET (N-Channel)
Number of Drivers: 2
Driven Configuration: Half-Bridge
Channel Type: Synchronous
Rise / Fall Time (Typ): 150ns, 50ns
Supplier Device Package: 8-SOIC
High Side Voltage - Max (Bootstrap): 600 V
Input Type: Non-Inverting
Voltage - Supply: 10V ~ 20V
Operating Temperature: -40°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Packaging: Cut Tape (CT)
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IR21091SPBF IR21091SPBF Infineon Technologies ir21091.pdf?fileId=5546d462533600a4015355c7f66f167c Description: IC GATE DRVR HALF-BRIDGE 8SOIC
Packaging: Tube
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Voltage - Supply: 10V ~ 20V
Input Type: Non-Inverting
High Side Voltage - Max (Bootstrap): 600 V
Supplier Device Package: 8-SOIC
Rise / Fall Time (Typ): 150ns, 50ns
Channel Type: Synchronous
Driven Configuration: Half-Bridge
Number of Drivers: 2
Gate Type: IGBT, MOSFET (N-Channel)
Logic Voltage - VIL, VIH: 0.8V, 2.9V
Current - Peak Output (Source, Sink): 200mA, 350mA
DigiKey Programmable: Not Verified
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EVAL6ED2231S12TM1TOBO1 EVAL6ED2231S12TM1TOBO1 Infineon Technologies EVAL-6ED2231S12TM1_V1.0_UG_6-2-22.pdf Description: EVAL BOARD
Packaging: Bulk
Contents: Board(s)
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IRF1010ZSPBF IRF1010ZSPBF Infineon Technologies irf1010z.pdf description Description: MOSFET N-CH 55V 75A D2PAK
Packaging: Tube
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 75A (Tc)
Rds On (Max) @ Id, Vgs: 7.5mOhm @ 75A, 10V
Power Dissipation (Max): 140W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: D2PAK
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 55 V
Gate Charge (Qg) (Max) @ Vgs: 95 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2840 pF @ 25 V
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AUIRF1010ZS AUIRF1010ZS Infineon Technologies auirf1010z.pdf?fileId=5546d462533600a4015355a89a4a1364 Description: MOSFET N-CH 55V 75A D2PAK
Packaging: Tube
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 75A (Tc)
Rds On (Max) @ Id, Vgs: 7.5mOhm @ 75A, 10V
Power Dissipation (Max): 140W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: PG-TO263-3
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 55 V
Gate Charge (Qg) (Max) @ Vgs: 95 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2840 pF @ 25 V
Grade: Automotive
Qualification: AEC-Q101
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IPD50N03S207ATMA1 IPD50N03S207ATMA1 Infineon Technologies fundamentals-of-power-semiconductors Description: MOSFET N-CH 30V 50A TO252-3
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 50A (Tc)
Rds On (Max) @ Id, Vgs: 7.3mOhm @ 50A, 10V
Power Dissipation (Max): 136W (Tc)
Vgs(th) (Max) @ Id: 4V @ 85µA
Supplier Device Package: PG-TO252-3-11
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 68 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2000 pF @ 25 V
Qualification: AEC-Q101
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TLF11251LDXUMA1 TLF11251LDXUMA1 Infineon Technologies Infineon-TLF11251LD-DataSheet-v01_01-EN.pdf?fileId=5546d46276fb756a0177241a02695830 Description: IC GATE DRVR HALF-BRIDGE 10TDFN
Packaging: Tape & Reel (TR)
Package / Case: 10-TFDFN Exposed Pad
Mounting Type: Surface Mount, Wettable Flank
Operating Temperature: -40°C ~ 150°C (TJ)
Voltage - Supply: 2.35V ~ 7V
Input Type: Non-Inverting
Supplier Device Package: PG-TSON-10-2
Rise / Fall Time (Typ): 60ns, 60ns
Channel Type: Single
Driven Configuration: Half-Bridge
Number of Drivers: 1
Gate Type: MOSFET (N-Channel, P-Channel)
Logic Voltage - VIL, VIH: 2.31V, 4.69V
Current - Peak Output (Source, Sink): 2.5A, 2.5A
Grade: Automotive
DigiKey Programmable: Not Verified
Qualification: AEC-Q100
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TLF11251LDXUMA1 TLF11251LDXUMA1 Infineon Technologies Infineon-TLF11251LD-DataSheet-v01_01-EN.pdf?fileId=5546d46276fb756a0177241a02695830 Description: IC GATE DRVR HALF-BRIDGE 10TDFN
Packaging: Cut Tape (CT)
Package / Case: 10-TFDFN Exposed Pad
Mounting Type: Surface Mount, Wettable Flank
Operating Temperature: -40°C ~ 150°C (TJ)
Voltage - Supply: 2.35V ~ 7V
Input Type: Non-Inverting
Supplier Device Package: PG-TSON-10-2
Rise / Fall Time (Typ): 60ns, 60ns
Channel Type: Single
Driven Configuration: Half-Bridge
Number of Drivers: 1
Gate Type: MOSFET (N-Channel, P-Channel)
Logic Voltage - VIL, VIH: 2.31V, 4.69V
Current - Peak Output (Source, Sink): 2.5A, 2.5A
Grade: Automotive
DigiKey Programmable: Not Verified
Qualification: AEC-Q100
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IRLZ44ZSPBF IRLZ44ZSPBF Infineon Technologies irlz44zpbf.pdf?fileId=5546d462533600a4015356722836272a Description: MOSFET N-CH 55V 51A D2PAK
Packaging: Tube
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 51A (Tc)
Rds On (Max) @ Id, Vgs: 13.5mOhm @ 31A, 10V
Power Dissipation (Max): 80W (Tc)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: D2PAK
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±16V
Drain to Source Voltage (Vdss): 55 V
Gate Charge (Qg) (Max) @ Vgs: 36 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 1620 pF @ 25 V
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AUIRLZ44Z AUIRLZ44Z Infineon Technologies auirlz44z.pdf?fileId=5546d462533600a4015355befab71595 Description: MOSFET N-CH 55V 51A TO220AB
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 51A (Tc)
Rds On (Max) @ Id, Vgs: 13.5mOhm @ 31A, 10V
Power Dissipation (Max): 80W (Tc)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: TO-220AB
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±16V
Drain to Source Voltage (Vdss): 55 V
Gate Charge (Qg) (Max) @ Vgs: 36 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 1620 pF @ 25 V
Grade: Automotive
Qualification: AEC-Q101
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IRMCK343TR IRMCK343TR Infineon Technologies IRMCK343.PDF Description: IC MOTOR DRIVER 64MQFP
Packaging: Tape & Reel (TR)
Package / Case: 64-LQFP
Mounting Type: Surface Mount
Function: Controller - Commutation, Direction Management
Interface: I2C, RS-232, SPI
Operating Temperature: -40°C ~ 85°C (TA)
Output Configuration: Pre-Driver - Half Bridge (3)
Voltage - Supply: 1.62V ~ 1.98V, 3V ~ 3.6V
Applications: Appliance
Technology: IGBT
Supplier Device Package: 64-MQFP (10x10)
Motor Type - AC, DC: AC, Synchronous
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IRMCK343TY IRMCK343TY Infineon Technologies IRMCK343.PDF Description: IC MTRDRV 1.62-1.98/3-3.6V 64QFP
Packaging: Tray
Package / Case: 64-LQFP
Mounting Type: Surface Mount
Function: Controller - Commutation, Direction Management
Interface: I²C, RS-232, SPI
Operating Temperature: -40°C ~ 85°C (TA)
Output Configuration: Pre-Driver - Half Bridge (3)
Voltage - Supply: 1.62V ~ 1.98V, 3V ~ 3.6V
Applications: Appliance
Technology: IGBT
Supplier Device Package: 64-QFP
Motor Type - AC, DC: AC, Synchronous
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MB15E03SLPFV1-G-ER-6E1 MB15E03SLPFV1-G-ER-6E1 Infineon Technologies download Description: IC FREQ SYNTH 16SSOP
DigiKey Programmable: Not Verified
Number of Circuits: 1
Divider/Multiplier: Yes/No
PLL: Yes
Supplier Device Package: 16-SSOP
Differential - Input:Output: No/No
Ratio - Input:Output: 1:1
Voltage - Supply: 2.4V ~ 3.6V
Operating Temperature: -40°C ~ 85°C
Input: Clock
Type: Frequency Synthesizer
Frequency - Max: 1.2GHz
Output: Clock
Mounting Type: Surface Mount
Package / Case: 16-LSSOP (0.173", 4.40mm Width)
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar
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CY2308SXI-2 CY2308SXI-2 Infineon Technologies Infineon-CY2308_3.3_V_Zero_Delay_Buffer-DataSheet-v21_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ebcea4d2ec4&utm_source=cypress&utm_medium=referral&utm_campaign=202110_globe_en_all_integration-files Description: IC FANOUT BUFFER 16SOIC
Packaging: Tube
Package / Case: 16-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Output: LVCMOS
Frequency - Max: 133.3MHz
Type: Fanout Buffer (Distribution), Zero Delay Buffer
Input: LVCMOS, LVTTL
Operating Temperature: -40°C ~ 85°C
Voltage - Supply: 3V ~ 3.6V
Ratio - Input:Output: 1:8
Differential - Input:Output: No/No
Supplier Device Package: 16-SOIC
PLL: Yes
Divider/Multiplier: Yes/Yes
Number of Circuits: 1
DigiKey Programmable: Not Verified
Produkt ist nicht verfügbar
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IRGP30B60KD-EP IRGP30B60KD-EP Infineon Technologies irgp30b60kd-epbf.pdf?fileId=5546d462533600a401535655b5382442 Description: IGBT NPT 600V 60A TO-247AD
Power - Max: 304 W
Current - Collector Pulsed (Icm): 120 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector (Ic) (Max): 60 A
Gate Charge: 102 nC
Test Condition: 400V, 30A, 10Ohm, 15V
Switching Energy: 350µJ (on), 825µJ (off)
Td (on/off) @ 25°C: 46ns/185ns
IGBT Type: NPT
Supplier Device Package: TO-247AD
Vce(on) (Max) @ Vge, Ic: 2.35V @ 15V, 30A
Reverse Recovery Time (trr): 125 ns
Input Type: Standard
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-247-3
Packaging: Tube
Produkt ist nicht verfügbar
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FM28V102A-TGTR FM28V102A-TGTR Infineon Technologies Infineon-FM28V102A_1-Mbit_(64_K_16)_F-RAM_Memory-DataSheet-v06_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ec8c591413e&utm_source=cypress&utm_medium=referral&utm_campaign=202110_globe_en_all_integration-files Description: IC FRAM 1MBIT PARALLEL 44TSOP II
Packaging: Tape & Reel (TR)
Package / Case: 44-TSOP (0.400", 10.16mm Width)
Mounting Type: Surface Mount
Memory Size: 1Mbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 2V ~ 3.6V
Technology: FRAM (Ferroelectric RAM)
Memory Format: FRAM
Supplier Device Package: 44-TSOP II
Write Cycle Time - Word, Page: 90ns
Memory Interface: Parallel
Access Time: 90 ns
Memory Organization: 64K x 16
DigiKey Programmable: Not Verified
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FM28V202A-TGTR FM28V202A-TGTR Infineon Technologies Infineon-FM28V202A_2-Mbit_(128_K_16)_F-RAM_Memory-DataSheet-v08_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ec8b6684132&utm_source=cypress&utm_medium=referral&utm_campaign=202110_globe_en_all_integration-files Description: IC FRAM 2MBIT PARALLEL 44TSOP II
Packaging: Tape & Reel (TR)
Package / Case: 44-TSOP (0.400", 10.16mm Width)
Mounting Type: Surface Mount
Memory Size: 2Mbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 2V ~ 3.6V
Technology: FRAM (Ferroelectric RAM)
Memory Format: FRAM
Supplier Device Package: 44-TSOP II
Write Cycle Time - Word, Page: 90ns
Memory Interface: Parallel
Access Time: 90 ns
Memory Organization: 128K x 16
DigiKey Programmable: Not Verified
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CY9BF114NBGL-G-F4K9E1 Infineon Technologies Description: IC MCU 32BIT 256KB FLASH 112FBGA
Speed: 144MHz
Mounting Type: Surface Mount
Package / Case: 112-LFBGA
Packaging: Tray
DigiKey Programmable: Not Verified
Number of I/O: 83
Supplier Device Package: 112-PFBGA (10x10)
Peripherals: DMA, LVD, POR, PWM, WDT
Connectivity: CSIO, EBI/EMI, I²C, LINbus, UART/USART
Voltage - Supply (Vcc/Vdd): 2.7V ~ 5.5V
Core Size: 32-Bit
Data Converters: A/D 16x12b
Core Processor: ARM® Cortex®-M3
EEPROM Size: 32K x 8
Program Memory Type: FLASH
Oscillator Type: Internal
Operating Temperature: -40°C ~ 85°C (TA)
RAM Size: 32K x 8
Program Memory Size: 256KB (256K x 8)
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198+28.32 EUR
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CY9BF106RAPMC-G-UNE2 CY9BF106RAPMC-G-UNE2 Infineon Technologies download Description: IC MCU 32BIT 512KB FLASH 120LQFP
Connectivity: CSIO, EBI/EMI, I2C, LINbus, UART/USART
Voltage - Supply (Vcc/Vdd): 2.7V ~ 5.5V
Core Size: 32-Bit Single-Core
Data Converters: A/D 16x12b
Core Processor: ARM® Cortex®-M3
Program Memory Type: FLASH
Oscillator Type: Internal
Operating Temperature: -40°C ~ 85°C (TA)
RAM Size: 64K x 8
Program Memory Size: 512KB (512K x 8)
Speed: 80MHz
Mounting Type: Surface Mount
Package / Case: 120-LQFP
Packaging: Tray
DigiKey Programmable: Not Verified
Number of I/O: 100
Supplier Device Package: 120-LQFP (16x16)
Peripherals: DMA, LVD, POR, PWM, WDT
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CY9BF116RPMC-G-F4FKE1 CY9BF116RPMC-G-F4FKE1 Infineon Technologies Infineon-CY9B110R_SERIES_32_BIT_ARM_CORTEX_M3_FM3_MICROCONTROLLER-DataSheet-v06_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0edf26e16421 Description: IC MCU 32BIT 512KB FLASH 120LQFP
Operating Temperature: -40°C ~ 85°C (TA)
RAM Size: 64K x 8
Program Memory Size: 512KB (512K x 8)
Speed: 144MHz
Mounting Type: Surface Mount
Package / Case: 120-LQFP
Packaging: Tray
DigiKey Programmable: Not Verified
Number of I/O: 103
Supplier Device Package: 120-LQFP (16x16)
Peripherals: DMA, LVD, POR, PWM, WDT
Connectivity: CSIO, EBI/EMI, I2C, LINbus, UART/USART
Voltage - Supply (Vcc/Vdd): 2.7V ~ 5.5V
Core Size: 32-Bit
Data Converters: A/D 16x12b
Core Processor: ARM® Cortex®-M3
EEPROM Size: 32K x 8
Program Memory Type: FLASH
Oscillator Type: Internal
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10+12.64 EUR
25+12.05 EUR
84+10.46 EUR
252+10 EUR
504+9.12 EUR
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CY9BF112NPQC-G-JNE2 CY9BF112NPQC-G-JNE2 Infineon Technologies Infineon-CY9B110R_SERIES_32_BIT_ARM_CORTEX_M3_FM3_MICROCONTROLLER-DataSheet-v06_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0edf26e16421&utm_source=cypress&utm_medium=referral&utm_campaign=202110_globe_en_all_integration-files Description: IC MCU 32BIT 160KB FLASH 100PQFP
DigiKey Programmable: Not Verified
Number of I/O: 83
Supplier Device Package: 100-PQFP (20x14)
Peripherals: DMA, LVD, POR, PWM, WDT
Connectivity: CSIO, EBI/EMI, I²C, LINbus, UART/USART
Voltage - Supply (Vcc/Vdd): 2.7V ~ 5.5V
Core Size: 32-Bit Single-Core
Data Converters: A/D 16x12b
Core Processor: ARM® Cortex®-M3
Program Memory Type: FLASH
Oscillator Type: Internal
Operating Temperature: -40°C ~ 85°C (TA)
RAM Size: 16K x 8
Program Memory Size: 160KB (160K x 8)
Speed: 144MHz
Mounting Type: Surface Mount
Package / Case: 100-BQFP
Packaging: Tray
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CY9BF112RPMC-G-JNE2 CY9BF112RPMC-G-JNE2 Infineon Technologies Infineon-CY9B110R_SERIES_32_BIT_ARM_CORTEX_M3_FM3_MICROCONTROLLER-DataSheet-v06_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0edf26e16421&utm_source=cypress&utm_medium=referral&utm_campaign=202110_globe_en_all_integration-files Description: IC MCU 32BIT 160KB FLASH 120LQFP
DigiKey Programmable: Not Verified
Number of I/O: 103
Supplier Device Package: 120-LQFP (16x16)
Peripherals: DMA, LVD, POR, PWM, WDT
Connectivity: CSIO, EBI/EMI, I²C, LINbus, UART/USART
Voltage - Supply (Vcc/Vdd): 2.7V ~ 5.5V
Core Size: 32-Bit Single-Core
Data Converters: A/D 16x12b
Core Processor: ARM® Cortex®-M3
Program Memory Type: FLASH
Oscillator Type: Internal
Operating Temperature: -40°C ~ 85°C (TA)
RAM Size: 16K x 8
Program Memory Size: 160KB (160K x 8)
Speed: 144MHz
Mounting Type: Surface Mount
Package / Case: 120-LQFP
Packaging: Tray
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CY9BF114NPQC-G-JNE2 CY9BF114NPQC-G-JNE2 Infineon Technologies Infineon-CY9B110R_SERIES_32_BIT_ARM_CORTEX_M3_FM3_MICROCONTROLLER-DataSheet-v06_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0edf26e16421&utm_source=cypress&utm_medium=referral&utm_campaign=202110_globe_en_all_integration-files Description: IC MCU 32BIT 288KB FLASH 100PQFP
DigiKey Programmable: Not Verified
Number of I/O: 83
Supplier Device Package: 100-PQFP (14x20)
Peripherals: DMA, LVD, POR, PWM, WDT
Connectivity: CSIO, EBI/EMI, I²C, LINbus, UART/USART
Voltage - Supply (Vcc/Vdd): 2.7V ~ 5.5V
Core Size: 32-Bit Single-Core
Data Converters: A/D 16x12b
Program Memory Type: FLASH
Oscillator Type: Internal
Operating Temperature: -40°C ~ 85°C (TA)
RAM Size: 32K x 8
Program Memory Size: 288KB (288K x 8)
Speed: 144MHz
Core Processor: ARM® Cortex®-M3
Mounting Type: Surface Mount
Package / Case: 100-BQFP
Packaging: Tray
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CY9BF114NPMC-GE1 Infineon Technologies Infineon-CY9B110R_SERIES_32_BIT_ARM_CORTEX_M3_FM3_MICROCONTROLLER-DataSheet-v06_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0edf26e16421 Description: MULTI-MARKET MCUS
Number of I/O: 83
Supplier Device Package: 100-LQFP (14x14)
Peripherals: DMA, LVD, POR, PWM, WDT
Connectivity: CSIO, EBI/EMI, I²C, LINbus, UART/USART
Voltage - Supply (Vcc/Vdd): 2.7V ~ 5.5V
Core Processor: ARM® Cortex®-M3
EEPROM Size: 32K x 8
Program Memory Type: FLASH
Oscillator Type: Internal
Operating Temperature: -40°C ~ 85°C (TA)
RAM Size: 32K x 8
Program Memory Size: 256KB (256K x 8)
Speed: 144MHz
Mounting Type: Surface Mount
Package / Case: 100-LQFP
Packaging: Tray
Core Size: 32-Bit
Data Converters: A/D 16x12b
Produkt ist nicht verfügbar
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CY9BF114NPMC-G-JNE1 Infineon Technologies Infineon-CY9B110R_SERIES_32_BIT_ARM_CORTEX_M3_FM3_MICROCONTROLLER-DataSheet-v06_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0edf26e16421 Description: MULTI-MARKET MCUS
Voltage - Supply (Vcc/Vdd): 2.7V ~ 5.5V
Core Size: 32-Bit
Data Converters: A/D 16x12b
Core Processor: ARM® Cortex®-M3
EEPROM Size: 32K x 8
Program Memory Type: FLASH
Oscillator Type: Internal
Operating Temperature: -40°C ~ 85°C (TA)
RAM Size: 32K x 8
Program Memory Size: 256KB (256K x 8)
Speed: 144MHz
Mounting Type: Surface Mount
Package / Case: 100-LQFP
Packaging: Tray
Number of I/O: 83
Supplier Device Package: 100-LQFP (14x14)
Peripherals: DMA, LVD, POR, PWM, WDT
Connectivity: CSIO, EBI/EMI, I²C, LINbus, UART/USART
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CY9BF115NBGL-GK9E1 CY9BF115NBGL-GK9E1 Infineon Technologies Description: IC MCU 32BIT 416KB FLASH 112BGA
DigiKey Programmable: Not Verified
Number of I/O: 83
Supplier Device Package: 112-PFBGA (10x10)
Peripherals: DMA, LVD, POR, PWM, WDT
Connectivity: CSIO, EBI/EMI, I2C, LINbus, UART/USART
Voltage - Supply (Vcc/Vdd): 2.7V ~ 5.5V
Core Size: 32-Bit Single-Core
Data Converters: A/D 16x12b
Core Processor: ARM® Cortex®-M3
Program Memory Type: FLASH
Oscillator Type: Internal
Operating Temperature: -40°C ~ 85°C (TA)
RAM Size: 48K x 8
Program Memory Size: 416KB (416K x 8)
Speed: 144MHz
Mounting Type: Surface Mount
Package / Case: 112-LFBGA
Packaging: Tray
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CY9BF115NPMC-G-JNE2 CY9BF115NPMC-G-JNE2 Infineon Technologies Infineon-CY9B110R_SERIES_32_BIT_ARM_CORTEX_M3_FM3_MICROCONTROLLER-DataSheet-v06_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0edf26e16421&utm_source=cypress&utm_medium=referral&utm_campaign=202110_globe_en_all_integration-files Description: IC MCU 32BIT 416KB FLASH 100LQFP
DigiKey Programmable: Not Verified
Number of I/O: 83
Supplier Device Package: 100-LQFP (14x14)
Peripherals: DMA, LVD, POR, PWM, WDT
Connectivity: CSIO, EBI/EMI, I²C, LINbus, UART/USART
Voltage - Supply (Vcc/Vdd): 2.7V ~ 5.5V
Core Size: 32-Bit Single-Core
Data Converters: A/D 16x12b
Core Processor: ARM® Cortex®-M3
Program Memory Type: FLASH
Oscillator Type: Internal
Operating Temperature: -40°C ~ 85°C (TA)
RAM Size: 48K x 8
Program Memory Size: 416KB (416K x 8)
Speed: 144MHz
Mounting Type: Surface Mount
Package / Case: 100-LQFP
Packaging: Tray
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CY9BF115NPQC-G-JNE2 CY9BF115NPQC-G-JNE2 Infineon Technologies Infineon-CY9B110R_SERIES_32_BIT_ARM_CORTEX_M3_FM3_MICROCONTROLLER-DataSheet-v06_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0edf26e16421&utm_source=cypress&utm_medium=referral&utm_campaign=202110_globe_en_all_integration-files Description: IC MCU 32BIT 416KB FLASH 100PQFP
Supplier Device Package: 100-PQFP (20x14)
Peripherals: DMA, LVD, POR, PWM, WDT
Connectivity: CSIO, EBI/EMI, I²C, LINbus, UART/USART
Voltage - Supply (Vcc/Vdd): 2.7V ~ 5.5V
Core Size: 32-Bit Single-Core
Data Converters: A/D 16x12b
Core Processor: ARM® Cortex®-M3
Program Memory Type: FLASH
Oscillator Type: Internal
Operating Temperature: -40°C ~ 85°C (TA)
RAM Size: 48K x 8
Program Memory Size: 416KB (416K x 8)
Speed: 144MHz
Mounting Type: Surface Mount
Package / Case: 100-BQFP
Packaging: Tray
DigiKey Programmable: Not Verified
Number of I/O: 83
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CY9BF116NPQC-G-JNE2 CY9BF116NPQC-G-JNE2 Infineon Technologies Infineon-CY9B110R_SERIES_32_BIT_ARM_CORTEX_M3_FM3_MICROCONTROLLER-DataSheet-v06_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0edf26e16421&utm_source=cypress&utm_medium=referral&utm_campaign=202110_globe_en_all_integration-files Description: IC MCU 32BIT 544KB FLASH 100PQFP
DigiKey Programmable: Not Verified
Number of I/O: 83
Supplier Device Package: 100-PQFP (14x20)
Peripherals: DMA, LVD, POR, PWM, WDT
Connectivity: CSIO, EBI/EMI, I²C, LINbus, UART/USART
Voltage - Supply (Vcc/Vdd): 2.7V ~ 5.5V
Core Size: 32-Bit Single-Core
Data Converters: A/D 16x12b
Core Processor: ARM® Cortex®-M3
Program Memory Type: FLASH
Oscillator Type: Internal
Operating Temperature: -40°C ~ 85°C (TA)
RAM Size: 64K x 8
Program Memory Size: 544KB (544K x 8)
Speed: 144MHz
Mounting Type: Surface Mount
Package / Case: 100-BQFP
Packaging: Tray
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S29GL01GS11FHSS53 S29GL01GS11FHSS53 Infineon Technologies Description: IC FLASH 1GBIT PARALLEL 64FBGA
Voltage - Supply: 2.7V ~ 3.6V
Operating Temperature: 0°C ~ 85°C (TA)
Memory Type: Non-Volatile
Memory Size: 1Gbit
Mounting Type: Surface Mount
Package / Case: 64-LBGA
Packaging: Tape & Reel (TR)
DigiKey Programmable: Not Verified
Memory Organization: 64M x 16
Access Time: 110 ns
Memory Interface: Parallel
Write Cycle Time - Word, Page: 60ns
Supplier Device Package: 64-FBGA (13x11)
Memory Format: FLASH
Technology: FLASH - NOR
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S29GL01GS11FHSS63 S29GL01GS11FHSS63 Infineon Technologies Infineon-1_GBIT_(128_MBYTE)_512_MBIT_(64_MBYTE)_256_MBIT_(32_MBYTE)_128_MBIT_(16_MBYTE)_3.0_V_GL-S_FLASH_MEMORY-DataSheet-v19_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ed07ac14bd5 Description: IC FLASH 1GBIT PARALLEL 64FBGA
DigiKey Programmable: Not Verified
Memory Organization: 64M x 16
Access Time: 110 ns
Memory Interface: Parallel
Write Cycle Time - Word, Page: 60ns
Supplier Device Package: 64-FBGA (13x11)
Memory Format: FLASH
Technology: FLASH - NOR
Voltage - Supply: 2.7V ~ 3.6V
Operating Temperature: 0°C ~ 85°C (TA)
Memory Type: Non-Volatile
Memory Size: 1Gbit
Mounting Type: Surface Mount
Package / Case: 64-LBGA
Packaging: Tape & Reel (TR)
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S29GL01GS11FHSS20 S29GL01GS11FHSS20 Infineon Technologies Description: IC FLASH 1GBIT PARALLEL 64FBGA
DigiKey Programmable: Not Verified
Memory Organization: 64M x 16
Access Time: 110 ns
Memory Interface: Parallel
Write Cycle Time - Word, Page: 60ns
Supplier Device Package: 64-FBGA (13x11)
Memory Format: FLASH
Technology: FLASH - NOR
Voltage - Supply: 2.7V ~ 3.6V
Operating Temperature: 0°C ~ 85°C (TA)
Memory Type: Non-Volatile
Memory Size: 1Gbit
Mounting Type: Surface Mount
Package / Case: 64-LBGA
Packaging: Tray
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S29GL01GS11FHSS50 S29GL01GS11FHSS50 Infineon Technologies Description: IC FLASH 1GBIT PARALLEL 64FBGA
DigiKey Programmable: Not Verified
Memory Organization: 64M x 16
Access Time: 110 ns
Memory Interface: Parallel
Write Cycle Time - Word, Page: 60ns
Supplier Device Package: 64-FBGA (13x11)
Memory Format: FLASH
Technology: FLASH - NOR
Voltage - Supply: 2.7V ~ 3.6V
Operating Temperature: 0°C ~ 85°C (TA)
Memory Type: Non-Volatile
Memory Size: 1Gbit
Mounting Type: Surface Mount
Package / Case: 64-LBGA
Packaging: Tray
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S29GL01GS11FHSS60 S29GL01GS11FHSS60 Infineon Technologies Description: IC FLASH 1GBIT PARALLEL 64FBGA
DigiKey Programmable: Not Verified
Memory Organization: 64M x 16
Access Time: 110 ns
Memory Interface: Parallel
Write Cycle Time - Word, Page: 60ns
Supplier Device Package: 64-FBGA (13x11)
Memory Format: FLASH
Technology: FLASH - NOR
Voltage - Supply: 2.7V ~ 3.6V
Operating Temperature: 0°C ~ 85°C (TA)
Memory Type: Non-Volatile
Memory Size: 1Gbit
Mounting Type: Surface Mount
Package / Case: 64-LBGA
Packaging: Tray
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CYPD2120-20FNXIT Infineon Technologies Infineon-EZ-PD_CCG2_Datasheet_USB_Type-C_Port_Controller-DataSheet-v15_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ecd9536480b&utm_source=cypress&utm_medium=referral&utm_campaign=202110_globe_en_all_integration-files Description: IC MCU 32BIT 32KB FLASH 35WLCSP
DigiKey Programmable: Not Verified
Packaging: Tape & Reel (TR)
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T1500N18TOFVTXPSA1 T1500N18TOFVTXPSA1 Infineon Technologies Infineon-T1500N-DS-v04_00-en_de.pdf?fileId=db3a304323b87bc201240b6f0b1d47c4 Description: SCR MODULE 1.8KV 3500A DO-200AB
Voltage - Off State: 1.8 kV
Current - On State (It (RMS)) (Max): 3500 A
Voltage - Gate Trigger (Vgt) (Max): 2 V
Current - On State (It (AV)) (Max): 1500 A
Number of SCRs, Diodes: 1 SCR
Current - Non Rep. Surge 50, 60Hz (Itsm): 39000A @ 50Hz
Current - Gate Trigger (Igt) (Max): 350 mA
Current - Hold (Ih) (Max): 500 mA
Structure: Single
Operating Temperature: -40°C ~ 125°C
Mounting Type: Clamp On
Package / Case: DO-200AB, B-PUK
Packaging: Tray
Produkt ist nicht verfügbar
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TLE42672GATMA1 TLE42672GATMA1 Infineon Technologies Infineon-TLE4267-2G-DS-v01_00-EN.pdf?fileId=5546d46259d9a4bf0159f95eb6b83e43 Description: IC REG LIN 5V 400MA PG-TO263-7-1
Voltage - Input (Max): 40V
Current - Quiescent (Iq): 4 mA
Output Configuration: Positive
Operating Temperature: -40°C ~ 150°C (TJ)
Current - Output: 400mA
Mounting Type: Surface Mount
Output Type: Fixed
Package / Case: TO-263-8, D2PAK (7 Leads + Tab), TO-263CA
Packaging: Cut Tape (CT)
Qualification: AEC-Q100
Grade: Automotive
Current - Supply (Max): 80 mA
Protection Features: Over Current, Over Temperature, Reverse Polarity, Short Circuit, Transient Voltage
Voltage Dropout (Max): 0.6V @ 400mA
PSRR: 54dB (100Hz)
Control Features: Inhibit, Reset
Voltage - Output (Min/Fixed): 5V
Supplier Device Package: PG-TO263-7-1
Number of Regulators: 1
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IRS2104PBF IRS2104PBF Infineon Technologies IRS2104PBF.pdf Description: IC GATE DRVR HALF-BRIDGE 8DIP
Packaging: Tube
Package / Case: 8-DIP (0.300", 7.62mm)
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 150°C (TJ)
Voltage - Supply: 10V ~ 20V
Input Type: Non-Inverting
High Side Voltage - Max (Bootstrap): 600 V
Supplier Device Package: 8-PDIP
Rise / Fall Time (Typ): 70ns, 35ns
Channel Type: Synchronous
Driven Configuration: Half-Bridge
Number of Drivers: 2
Gate Type: IGBT, MOSFET (N-Channel)
Logic Voltage - VIL, VIH: 0.8V, 2.5V
Current - Peak Output (Source, Sink): 290mA, 600mA
DigiKey Programmable: Not Verified
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CY2304NZZXC-1 CY2304NZZXC-1 Infineon Technologies Infineon-CY2304NZ_Four_Output_PCI-X_and_General_Purpose_Buffer-DataSheet-v12_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ebcd7a92ea3&utm_source=cypress&utm_medium=referral&utm_campaign=202110_globe_en_all_integration-files Description: IC CLK ZDB 4OUT 140MHZ 8TSSOP
DigiKey Programmable: Not Verified
Number of Circuits: 1
PLL: No
Supplier Device Package: 8-TSSOP
Differential - Input:Output: No/No
Ratio - Input:Output: 1:4
Main Purpose: PCI Express (PCIe)
Voltage - Supply: 3V ~ 3.6V
Operating Temperature: 0°C ~ 70°C
Input: LVCMOS, LVTTL
Frequency - Max: 140MHz
Output: LVCMOS
Mounting Type: Surface Mount
Package / Case: 8-TSSOP (0.173", 4.40mm Width)
Packaging: Tube
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IRL1404PBF IRL1404PBF Infineon Technologies irl1404pbf.pdf?fileId=5546d462533600a40153565b382824f0 Description: MOSFET N-CH 40V 160A TO220AB
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 160A (Tc)
Rds On (Max) @ Id, Vgs: 4mOhm @ 95A, 10V
Power Dissipation (Max): 200W (Tc)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: TO-220AB
Drive Voltage (Max Rds On, Min Rds On): 4.3V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 140 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 6590 pF @ 25 V
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IRL1404SPBF IRL1404SPBF Infineon Technologies irl1404spbf.pdf?fileId=5546d462533600a40153565b41eb24f2 Description: MOSFET N-CH 40V 160A D2PAK
Packaging: Tube
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 160A (Tc)
Rds On (Max) @ Id, Vgs: 4mOhm @ 95A, 10V
Power Dissipation (Max): 3.8W (Ta), 200W (Tc)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: D2PAK
Drive Voltage (Max Rds On, Min Rds On): 4.3V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 140 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 6600 pF @ 25 V
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IRL1404ZSPBF IRL1404ZSPBF Infineon Technologies irl1404zpbf.pdf?fileId=5546d462533600a40153565b4b2d24f5 Description: MOSFET N-CH 40V 75A D2PAK
Packaging: Tube
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 75A (Tc)
Rds On (Max) @ Id, Vgs: 3.1mOhm @ 75A, 10V
Power Dissipation (Max): 230W (Tc)
Vgs(th) (Max) @ Id: 2.7V @ 250µA
Supplier Device Package: D2PAK
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±16V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 110 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 5080 pF @ 25 V
Produkt ist nicht verfügbar
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PEF 22508 E V1.1-G Infineon Technologies PEF22508_Rev2.0.pdf Description: IC TELECOM INTERFACE 256-LBGA
Power (Watts): 140 mW
Number of Circuits: 8
Supplier Device Package: PG-LBGA-256-1
Current - Supply: 370mA
Voltage - Supply: 1.8V, 3.3V
Operating Temperature: -40°C ~ 85°C
Interface: E1, J1, T1
Function: Line Interface Unit (LIU)
Mounting Type: Surface Mount
Package / Case: 256-LBGA
Packaging: Tray
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IAUC50N08S5N102ATMA1 IAUC50N08S5N102ATMA1 Infineon Technologies Infineon-IAUC50N08S5N102-DataSheet-v01_01-EN.pdf?fileId=5546d46279cccfdb0179ccd4039a0208 Description: MOSFET_(75V 120V( PG-TDSON-8
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 50A (Tj)
Rds On (Max) @ Id, Vgs: 10.2mOhm @ 25A, 10V
Power Dissipation (Max): 60W (Tc)
Vgs(th) (Max) @ Id: 3.8V @ 24µA
Supplier Device Package: PG-TDSON-8-33
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 80 V
Gate Charge (Qg) (Max) @ Vgs: 21 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1394 pF @ 40 V
Qualification: AEC-Q101
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DDB2U50N08W1RB11BPSA1 Infineon Technologies Description: LOW POWER EASY
Packaging: Tray
Produkt ist nicht verfügbar
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DDB2U50N08W1RB23BOMA1 Infineon Technologies DDB2U50N08W1R_B23_Rev02_2011-02-26.pdf Description: MOD DIODE BRIDGE EASY1B-2-1
Packaging: Tray
Produkt ist nicht verfügbar
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D650N08TXPSA1 D650N08TXPSA1 Infineon Technologies D650N.pdf Description: DIODE GEN PURP 800V 650A
Current - Reverse Leakage @ Vr: 20 mA @ 800 V
Voltage - Forward (Vf) (Max) @ If: 950 mV @ 450 A
Voltage - DC Reverse (Vr) (Max): 800 V
Operating Temperature - Junction: -40°C ~ 180°C
Current - Average Rectified (Io): 650A
Technology: Standard
Speed: Standard Recovery >500ns, > 200mA (Io)
Mounting Type: Clamp On
Package / Case: DO-200AA, A-PUK
Packaging: Bulk
Produkt ist nicht verfügbar
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IPT65R155CFD7XTMA1 IPT65R155CFD7XTMA1 Infineon Technologies Infineon-IPT65R155CFD7-DataSheet-v02_01-EN.pdf?fileId=8ac78c8c85ecb3470186794f19d878b3 Description: HIGH POWER_NEW
Drain to Source Voltage (Vdss): 650 V
Supplier Device Package: PG-HSOF-8-3
Mounting Type: Surface Mount
Package / Case: 8-PowerSFN
Packaging: Tape & Reel (TR)
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IPT65R155CFD7XTMA1 IPT65R155CFD7XTMA1 Infineon Technologies Infineon-IPT65R155CFD7-DataSheet-v02_01-EN.pdf?fileId=8ac78c8c85ecb3470186794f19d878b3 Description: HIGH POWER_NEW
Drain to Source Voltage (Vdss): 650 V
Supplier Device Package: PG-HSOF-8-3
Mounting Type: Surface Mount
Package / Case: 8-PowerSFN
Packaging: Cut Tape (CT)
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24VSHIELDBTT6030TOBO1 Infineon-24V%20protected%20switch%20shield_PB.pdf-PB-v01_00-EN.pdf?fileId=5546d46255dd933d015601e282682ac5
24VSHIELDBTT6030TOBO1
Hersteller: Infineon Technologies
Description: EVAL 24V PROTECT SWITCH SHIELD
Packaging: Bulk
Function: Switch
Type: Power Management
Contents: Board(s)
Utilized IC / Part: BTT6020-1ERA, BTT6030-2ERA
Platform: Arduino
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CY8C4245LTI-M445 download
CY8C4245LTI-M445
Hersteller: Infineon Technologies
Description: IC MCU 32BIT 32KB FLASH 68QFN
Packaging: Tray
Package / Case: 68-VFQFN Exposed Pad
Mounting Type: Surface Mount
Speed: 48MHz
Program Memory Size: 32KB (32K x 8)
RAM Size: 4K x 8
Operating Temperature: -40°C ~ 85°C (TA)
Oscillator Type: Internal
Program Memory Type: FLASH
Core Processor: ARM® Cortex®-M0
Data Converters: A/D 16x12b
Core Size: 32-Bit
Voltage - Supply (Vcc/Vdd): 1.71V ~ 5.5V
Connectivity: I2C, IrDA, LINbus, Microwire, SmartCard, SPI, SSP, UART/USART
Peripherals: Brown-out Detect/Reset, Cap Sense, LCD, LVD, POR, PWM, SmartSense, WDT
Supplier Device Package: 68-QFN (8x8)
Number of I/O: 55
DigiKey Programmable: Not Verified
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260+6.15 EUR
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IPB60R280CFD7ATMA1 Infineon-IPB60R280CFD7-DataSheet-v02_00-EN.pdf?fileId=5546d4626b2d8e69016bb2a0d76e1ac5
IPB60R280CFD7ATMA1
Hersteller: Infineon Technologies
Description: MOSFET N-CH 600V 9A TO263-3-2
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 9A (Tc)
Rds On (Max) @ Id, Vgs: 280mOhm @ 3.6A, 10V
Power Dissipation (Max): 51W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 180µA
Supplier Device Package: PG-TO263-3-2
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 18 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 807 pF @ 400 V
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4+5.57 EUR
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IPD60R280P7SE8228AUMA1 infineon-ipd60r280p7-datasheet-en.pdf
IPD60R280P7SE8228AUMA1
Hersteller: Infineon Technologies
Description: MOSFET N-CH 600V 12A TO252-3
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 12A (Tc)
Rds On (Max) @ Id, Vgs: 280mOhm @ 3.8A, 10V
Power Dissipation (Max): 53W (Tc)
Vgs(th) (Max) @ Id: 4V @ 190µA
Supplier Device Package: PG-TO252-3
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 18 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 761 pF @ 400 V
Produkt ist nicht verfügbar
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IPS60R280PFD7SAKMA1 Infineon-IPS60R280PFD7S-DataSheet-v02_00-EN.pdf?fileId=5546d4626eab8fbf016ed5dc2db339cc
IPS60R280PFD7SAKMA1
Hersteller: Infineon Technologies
Description: CONSUMER PG-TO251-3
Packaging: Bulk
Package / Case: TO-251-3 Short Leads, IPak, TO-251AA
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 12A (Tc)
Rds On (Max) @ Id, Vgs: 280mOhm @ 3.6A, 10V
Power Dissipation (Max): 51W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 180µA
Supplier Device Package: PG-TO251-3
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 15.3 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 656 pF @ 400 V
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IPA60R280P7SE8228XKSA1 infineon-ipa60r280p7-datasheet-en.pdf
IPA60R280P7SE8228XKSA1
Hersteller: Infineon Technologies
Description: MOSFET N-CH 600V 12A TO220
Packaging: Bulk
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 12A (Tc)
Rds On (Max) @ Id, Vgs: 280mOhm @ 3.8A, 10V
Power Dissipation (Max): 24W (Tc)
Vgs(th) (Max) @ Id: 4V @ 190µA
Supplier Device Package: PG-TO220-FP
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 18 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 761 pF @ 400 V
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IPA60R280P7SE8228XKSA1 infineon-ipa60r280p7-datasheet-en.pdf
IPA60R280P7SE8228XKSA1
Hersteller: Infineon Technologies
Description: MOSFET N-CH 600V 12A TO220
Packaging: Tube
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 12A (Tc)
Rds On (Max) @ Id, Vgs: 280mOhm @ 3.8A, 10V
Power Dissipation (Max): 24W (Tc)
Vgs(th) (Max) @ Id: 4V @ 190µA
Supplier Device Package: PG-TO220-FP
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 18 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 761 pF @ 400 V
Produkt ist nicht verfügbar
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IPA60R280C6XKSA1 IPA60R280C6_2_1.pdf?folderId=db3a3043163797a6011638933eda014b&fileId=db3a30432313ff5e01239ddb46a66f73
IPA60R280C6XKSA1
Hersteller: Infineon Technologies
Description: MOSFET N-CH 600V 13.8A TO220-FP
Packaging: Tube
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 13.8A (Tc)
Rds On (Max) @ Id, Vgs: 280mOhm @ 6.5A, 10V
Power Dissipation (Max): 32W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 430µA
Supplier Device Package: PG-TO220-FP
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 43 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 950 pF @ 100 V
Produkt ist nicht verfügbar
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IPP60R280E6XKSA1 IPP60R280E6_2.0.pdf?folderId=db3a3043163797a6011638933eda014b&fileId=db3a304327b8975001281fa6ed7144f7
IPP60R280E6XKSA1
Hersteller: Infineon Technologies
Description: MOSFET N-CH 600V 13.8A TO220-3
Packaging: Bulk
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 13.8A (Tc)
Rds On (Max) @ Id, Vgs: 280mOhm @ 6.5A, 10V
Power Dissipation (Max): 104W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 430µA
Supplier Device Package: PG-TO220-3
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 43 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 950 pF @ 100 V
auf Bestellung 2027 Stücke:
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214+2.7 EUR
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IPD380P06NMATMA1 Infineon-IPD380P06NM-DS-v02_00-EN.pdf?fileId=5546d46269e1c019016a03e2ea8300b7
IPD380P06NMATMA1
Hersteller: Infineon Technologies
Description: MOSFET P-CH 60V 35A TO252-3
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 35A (Tc)
Rds On (Max) @ Id, Vgs: 38mOhm @ 35A, 10V
Power Dissipation (Max): 125W (Tc)
Vgs(th) (Max) @ Id: 4V @ 1.7mA
Supplier Device Package: PG-TO252-3
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 63 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2500 pF @ 30 V
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2500+1.39 EUR
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IR21091STRPBF ir21091.pdf?fileId=5546d462533600a4015355c7f66f167c
IR21091STRPBF
Hersteller: Infineon Technologies
Description: IC GATE DRVR HALF-BRIDGE 8SOIC
DigiKey Programmable: Not Verified
Current - Peak Output (Source, Sink): 200mA, 350mA
Logic Voltage - VIL, VIH: 0.8V, 2.9V
Gate Type: IGBT, MOSFET (N-Channel)
Number of Drivers: 2
Driven Configuration: Half-Bridge
Channel Type: Synchronous
Rise / Fall Time (Typ): 150ns, 50ns
Supplier Device Package: 8-SOIC
High Side Voltage - Max (Bootstrap): 600 V
Input Type: Non-Inverting
Voltage - Supply: 10V ~ 20V
Operating Temperature: -40°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Packaging: Tape & Reel (TR)
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IR21091STRPBF ir21091.pdf?fileId=5546d462533600a4015355c7f66f167c
IR21091STRPBF
Hersteller: Infineon Technologies
Description: IC GATE DRVR HALF-BRIDGE 8SOIC
DigiKey Programmable: Not Verified
Current - Peak Output (Source, Sink): 200mA, 350mA
Logic Voltage - VIL, VIH: 0.8V, 2.9V
Gate Type: IGBT, MOSFET (N-Channel)
Number of Drivers: 2
Driven Configuration: Half-Bridge
Channel Type: Synchronous
Rise / Fall Time (Typ): 150ns, 50ns
Supplier Device Package: 8-SOIC
High Side Voltage - Max (Bootstrap): 600 V
Input Type: Non-Inverting
Voltage - Supply: 10V ~ 20V
Operating Temperature: -40°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Packaging: Cut Tape (CT)
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IR21091SPBF ir21091.pdf?fileId=5546d462533600a4015355c7f66f167c
IR21091SPBF
Hersteller: Infineon Technologies
Description: IC GATE DRVR HALF-BRIDGE 8SOIC
Packaging: Tube
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Voltage - Supply: 10V ~ 20V
Input Type: Non-Inverting
High Side Voltage - Max (Bootstrap): 600 V
Supplier Device Package: 8-SOIC
Rise / Fall Time (Typ): 150ns, 50ns
Channel Type: Synchronous
Driven Configuration: Half-Bridge
Number of Drivers: 2
Gate Type: IGBT, MOSFET (N-Channel)
Logic Voltage - VIL, VIH: 0.8V, 2.9V
Current - Peak Output (Source, Sink): 200mA, 350mA
DigiKey Programmable: Not Verified
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EVAL6ED2231S12TM1TOBO1 EVAL-6ED2231S12TM1_V1.0_UG_6-2-22.pdf
EVAL6ED2231S12TM1TOBO1
Hersteller: Infineon Technologies
Description: EVAL BOARD
Packaging: Bulk
Contents: Board(s)
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IRF1010ZSPBF description irf1010z.pdf
IRF1010ZSPBF
Hersteller: Infineon Technologies
Description: MOSFET N-CH 55V 75A D2PAK
Packaging: Tube
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 75A (Tc)
Rds On (Max) @ Id, Vgs: 7.5mOhm @ 75A, 10V
Power Dissipation (Max): 140W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: D2PAK
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 55 V
Gate Charge (Qg) (Max) @ Vgs: 95 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2840 pF @ 25 V
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AUIRF1010ZS auirf1010z.pdf?fileId=5546d462533600a4015355a89a4a1364
AUIRF1010ZS
Hersteller: Infineon Technologies
Description: MOSFET N-CH 55V 75A D2PAK
Packaging: Tube
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 75A (Tc)
Rds On (Max) @ Id, Vgs: 7.5mOhm @ 75A, 10V
Power Dissipation (Max): 140W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: PG-TO263-3
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 55 V
Gate Charge (Qg) (Max) @ Vgs: 95 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2840 pF @ 25 V
Grade: Automotive
Qualification: AEC-Q101
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IPD50N03S207ATMA1 fundamentals-of-power-semiconductors
IPD50N03S207ATMA1
Hersteller: Infineon Technologies
Description: MOSFET N-CH 30V 50A TO252-3
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 50A (Tc)
Rds On (Max) @ Id, Vgs: 7.3mOhm @ 50A, 10V
Power Dissipation (Max): 136W (Tc)
Vgs(th) (Max) @ Id: 4V @ 85µA
Supplier Device Package: PG-TO252-3-11
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 68 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2000 pF @ 25 V
Qualification: AEC-Q101
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TLF11251LDXUMA1 Infineon-TLF11251LD-DataSheet-v01_01-EN.pdf?fileId=5546d46276fb756a0177241a02695830
TLF11251LDXUMA1
Hersteller: Infineon Technologies
Description: IC GATE DRVR HALF-BRIDGE 10TDFN
Packaging: Tape & Reel (TR)
Package / Case: 10-TFDFN Exposed Pad
Mounting Type: Surface Mount, Wettable Flank
Operating Temperature: -40°C ~ 150°C (TJ)
Voltage - Supply: 2.35V ~ 7V
Input Type: Non-Inverting
Supplier Device Package: PG-TSON-10-2
Rise / Fall Time (Typ): 60ns, 60ns
Channel Type: Single
Driven Configuration: Half-Bridge
Number of Drivers: 1
Gate Type: MOSFET (N-Channel, P-Channel)
Logic Voltage - VIL, VIH: 2.31V, 4.69V
Current - Peak Output (Source, Sink): 2.5A, 2.5A
Grade: Automotive
DigiKey Programmable: Not Verified
Qualification: AEC-Q100
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TLF11251LDXUMA1 Infineon-TLF11251LD-DataSheet-v01_01-EN.pdf?fileId=5546d46276fb756a0177241a02695830
TLF11251LDXUMA1
Hersteller: Infineon Technologies
Description: IC GATE DRVR HALF-BRIDGE 10TDFN
Packaging: Cut Tape (CT)
Package / Case: 10-TFDFN Exposed Pad
Mounting Type: Surface Mount, Wettable Flank
Operating Temperature: -40°C ~ 150°C (TJ)
Voltage - Supply: 2.35V ~ 7V
Input Type: Non-Inverting
Supplier Device Package: PG-TSON-10-2
Rise / Fall Time (Typ): 60ns, 60ns
Channel Type: Single
Driven Configuration: Half-Bridge
Number of Drivers: 1
Gate Type: MOSFET (N-Channel, P-Channel)
Logic Voltage - VIL, VIH: 2.31V, 4.69V
Current - Peak Output (Source, Sink): 2.5A, 2.5A
Grade: Automotive
DigiKey Programmable: Not Verified
Qualification: AEC-Q100
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6+3.67 EUR
10+2.7 EUR
25+2.46 EUR
100+2.19 EUR
250+2.07 EUR
500+2 EUR
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IRLZ44ZSPBF irlz44zpbf.pdf?fileId=5546d462533600a4015356722836272a
IRLZ44ZSPBF
Hersteller: Infineon Technologies
Description: MOSFET N-CH 55V 51A D2PAK
Packaging: Tube
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 51A (Tc)
Rds On (Max) @ Id, Vgs: 13.5mOhm @ 31A, 10V
Power Dissipation (Max): 80W (Tc)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: D2PAK
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±16V
Drain to Source Voltage (Vdss): 55 V
Gate Charge (Qg) (Max) @ Vgs: 36 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 1620 pF @ 25 V
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AUIRLZ44Z auirlz44z.pdf?fileId=5546d462533600a4015355befab71595
AUIRLZ44Z
Hersteller: Infineon Technologies
Description: MOSFET N-CH 55V 51A TO220AB
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 51A (Tc)
Rds On (Max) @ Id, Vgs: 13.5mOhm @ 31A, 10V
Power Dissipation (Max): 80W (Tc)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: TO-220AB
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±16V
Drain to Source Voltage (Vdss): 55 V
Gate Charge (Qg) (Max) @ Vgs: 36 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 1620 pF @ 25 V
Grade: Automotive
Qualification: AEC-Q101
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IRMCK343TR IRMCK343.PDF
IRMCK343TR
Hersteller: Infineon Technologies
Description: IC MOTOR DRIVER 64MQFP
Packaging: Tape & Reel (TR)
Package / Case: 64-LQFP
Mounting Type: Surface Mount
Function: Controller - Commutation, Direction Management
Interface: I2C, RS-232, SPI
Operating Temperature: -40°C ~ 85°C (TA)
Output Configuration: Pre-Driver - Half Bridge (3)
Voltage - Supply: 1.62V ~ 1.98V, 3V ~ 3.6V
Applications: Appliance
Technology: IGBT
Supplier Device Package: 64-MQFP (10x10)
Motor Type - AC, DC: AC, Synchronous
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IRMCK343TY IRMCK343.PDF
IRMCK343TY
Hersteller: Infineon Technologies
Description: IC MTRDRV 1.62-1.98/3-3.6V 64QFP
Packaging: Tray
Package / Case: 64-LQFP
Mounting Type: Surface Mount
Function: Controller - Commutation, Direction Management
Interface: I²C, RS-232, SPI
Operating Temperature: -40°C ~ 85°C (TA)
Output Configuration: Pre-Driver - Half Bridge (3)
Voltage - Supply: 1.62V ~ 1.98V, 3V ~ 3.6V
Applications: Appliance
Technology: IGBT
Supplier Device Package: 64-QFP
Motor Type - AC, DC: AC, Synchronous
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MB15E03SLPFV1-G-ER-6E1 download
MB15E03SLPFV1-G-ER-6E1
Hersteller: Infineon Technologies
Description: IC FREQ SYNTH 16SSOP
DigiKey Programmable: Not Verified
Number of Circuits: 1
Divider/Multiplier: Yes/No
PLL: Yes
Supplier Device Package: 16-SSOP
Differential - Input:Output: No/No
Ratio - Input:Output: 1:1
Voltage - Supply: 2.4V ~ 3.6V
Operating Temperature: -40°C ~ 85°C
Input: Clock
Type: Frequency Synthesizer
Frequency - Max: 1.2GHz
Output: Clock
Mounting Type: Surface Mount
Package / Case: 16-LSSOP (0.173", 4.40mm Width)
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar
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CY2308SXI-2 Infineon-CY2308_3.3_V_Zero_Delay_Buffer-DataSheet-v21_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ebcea4d2ec4&utm_source=cypress&utm_medium=referral&utm_campaign=202110_globe_en_all_integration-files
CY2308SXI-2
Hersteller: Infineon Technologies
Description: IC FANOUT BUFFER 16SOIC
Packaging: Tube
Package / Case: 16-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Output: LVCMOS
Frequency - Max: 133.3MHz
Type: Fanout Buffer (Distribution), Zero Delay Buffer
Input: LVCMOS, LVTTL
Operating Temperature: -40°C ~ 85°C
Voltage - Supply: 3V ~ 3.6V
Ratio - Input:Output: 1:8
Differential - Input:Output: No/No
Supplier Device Package: 16-SOIC
PLL: Yes
Divider/Multiplier: Yes/Yes
Number of Circuits: 1
DigiKey Programmable: Not Verified
Produkt ist nicht verfügbar
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IRGP30B60KD-EP irgp30b60kd-epbf.pdf?fileId=5546d462533600a401535655b5382442
IRGP30B60KD-EP
Hersteller: Infineon Technologies
Description: IGBT NPT 600V 60A TO-247AD
Power - Max: 304 W
Current - Collector Pulsed (Icm): 120 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector (Ic) (Max): 60 A
Gate Charge: 102 nC
Test Condition: 400V, 30A, 10Ohm, 15V
Switching Energy: 350µJ (on), 825µJ (off)
Td (on/off) @ 25°C: 46ns/185ns
IGBT Type: NPT
Supplier Device Package: TO-247AD
Vce(on) (Max) @ Vge, Ic: 2.35V @ 15V, 30A
Reverse Recovery Time (trr): 125 ns
Input Type: Standard
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-247-3
Packaging: Tube
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FM28V102A-TGTR Infineon-FM28V102A_1-Mbit_(64_K_16)_F-RAM_Memory-DataSheet-v06_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ec8c591413e&utm_source=cypress&utm_medium=referral&utm_campaign=202110_globe_en_all_integration-files
FM28V102A-TGTR
Hersteller: Infineon Technologies
Description: IC FRAM 1MBIT PARALLEL 44TSOP II
Packaging: Tape & Reel (TR)
Package / Case: 44-TSOP (0.400", 10.16mm Width)
Mounting Type: Surface Mount
Memory Size: 1Mbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 2V ~ 3.6V
Technology: FRAM (Ferroelectric RAM)
Memory Format: FRAM
Supplier Device Package: 44-TSOP II
Write Cycle Time - Word, Page: 90ns
Memory Interface: Parallel
Access Time: 90 ns
Memory Organization: 64K x 16
DigiKey Programmable: Not Verified
Produkt ist nicht verfügbar
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FM28V202A-TGTR Infineon-FM28V202A_2-Mbit_(128_K_16)_F-RAM_Memory-DataSheet-v08_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ec8b6684132&utm_source=cypress&utm_medium=referral&utm_campaign=202110_globe_en_all_integration-files
FM28V202A-TGTR
Hersteller: Infineon Technologies
Description: IC FRAM 2MBIT PARALLEL 44TSOP II
Packaging: Tape & Reel (TR)
Package / Case: 44-TSOP (0.400", 10.16mm Width)
Mounting Type: Surface Mount
Memory Size: 2Mbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 2V ~ 3.6V
Technology: FRAM (Ferroelectric RAM)
Memory Format: FRAM
Supplier Device Package: 44-TSOP II
Write Cycle Time - Word, Page: 90ns
Memory Interface: Parallel
Access Time: 90 ns
Memory Organization: 128K x 16
DigiKey Programmable: Not Verified
Produkt ist nicht verfügbar
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CY9BF114NBGL-G-F4K9E1
Hersteller: Infineon Technologies
Description: IC MCU 32BIT 256KB FLASH 112FBGA
Speed: 144MHz
Mounting Type: Surface Mount
Package / Case: 112-LFBGA
Packaging: Tray
DigiKey Programmable: Not Verified
Number of I/O: 83
Supplier Device Package: 112-PFBGA (10x10)
Peripherals: DMA, LVD, POR, PWM, WDT
Connectivity: CSIO, EBI/EMI, I²C, LINbus, UART/USART
Voltage - Supply (Vcc/Vdd): 2.7V ~ 5.5V
Core Size: 32-Bit
Data Converters: A/D 16x12b
Core Processor: ARM® Cortex®-M3
EEPROM Size: 32K x 8
Program Memory Type: FLASH
Oscillator Type: Internal
Operating Temperature: -40°C ~ 85°C (TA)
RAM Size: 32K x 8
Program Memory Size: 256KB (256K x 8)
auf Bestellung 1980 Stücke:
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1+36.49 EUR
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CY9BF106RAPMC-G-UNE2 download
CY9BF106RAPMC-G-UNE2
Hersteller: Infineon Technologies
Description: IC MCU 32BIT 512KB FLASH 120LQFP
Connectivity: CSIO, EBI/EMI, I2C, LINbus, UART/USART
Voltage - Supply (Vcc/Vdd): 2.7V ~ 5.5V
Core Size: 32-Bit Single-Core
Data Converters: A/D 16x12b
Core Processor: ARM® Cortex®-M3
Program Memory Type: FLASH
Oscillator Type: Internal
Operating Temperature: -40°C ~ 85°C (TA)
RAM Size: 64K x 8
Program Memory Size: 512KB (512K x 8)
Speed: 80MHz
Mounting Type: Surface Mount
Package / Case: 120-LQFP
Packaging: Tray
DigiKey Programmable: Not Verified
Number of I/O: 100
Supplier Device Package: 120-LQFP (16x16)
Peripherals: DMA, LVD, POR, PWM, WDT
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1+28.13 EUR
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CY9BF116RPMC-G-F4FKE1 Infineon-CY9B110R_SERIES_32_BIT_ARM_CORTEX_M3_FM3_MICROCONTROLLER-DataSheet-v06_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0edf26e16421
CY9BF116RPMC-G-F4FKE1
Hersteller: Infineon Technologies
Description: IC MCU 32BIT 512KB FLASH 120LQFP
Operating Temperature: -40°C ~ 85°C (TA)
RAM Size: 64K x 8
Program Memory Size: 512KB (512K x 8)
Speed: 144MHz
Mounting Type: Surface Mount
Package / Case: 120-LQFP
Packaging: Tray
DigiKey Programmable: Not Verified
Number of I/O: 103
Supplier Device Package: 120-LQFP (16x16)
Peripherals: DMA, LVD, POR, PWM, WDT
Connectivity: CSIO, EBI/EMI, I2C, LINbus, UART/USART
Voltage - Supply (Vcc/Vdd): 2.7V ~ 5.5V
Core Size: 32-Bit
Data Converters: A/D 16x12b
Core Processor: ARM® Cortex®-M3
EEPROM Size: 32K x 8
Program Memory Type: FLASH
Oscillator Type: Internal
auf Bestellung 837 Stücke:
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2+13.99 EUR
10+12.64 EUR
25+12.05 EUR
84+10.46 EUR
252+10 EUR
504+9.12 EUR
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CY9BF112NPQC-G-JNE2 Infineon-CY9B110R_SERIES_32_BIT_ARM_CORTEX_M3_FM3_MICROCONTROLLER-DataSheet-v06_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0edf26e16421&utm_source=cypress&utm_medium=referral&utm_campaign=202110_globe_en_all_integration-files
CY9BF112NPQC-G-JNE2
Hersteller: Infineon Technologies
Description: IC MCU 32BIT 160KB FLASH 100PQFP
DigiKey Programmable: Not Verified
Number of I/O: 83
Supplier Device Package: 100-PQFP (20x14)
Peripherals: DMA, LVD, POR, PWM, WDT
Connectivity: CSIO, EBI/EMI, I²C, LINbus, UART/USART
Voltage - Supply (Vcc/Vdd): 2.7V ~ 5.5V
Core Size: 32-Bit Single-Core
Data Converters: A/D 16x12b
Core Processor: ARM® Cortex®-M3
Program Memory Type: FLASH
Oscillator Type: Internal
Operating Temperature: -40°C ~ 85°C (TA)
RAM Size: 16K x 8
Program Memory Size: 160KB (160K x 8)
Speed: 144MHz
Mounting Type: Surface Mount
Package / Case: 100-BQFP
Packaging: Tray
Produkt ist nicht verfügbar
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CY9BF112RPMC-G-JNE2 Infineon-CY9B110R_SERIES_32_BIT_ARM_CORTEX_M3_FM3_MICROCONTROLLER-DataSheet-v06_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0edf26e16421&utm_source=cypress&utm_medium=referral&utm_campaign=202110_globe_en_all_integration-files
CY9BF112RPMC-G-JNE2
Hersteller: Infineon Technologies
Description: IC MCU 32BIT 160KB FLASH 120LQFP
DigiKey Programmable: Not Verified
Number of I/O: 103
Supplier Device Package: 120-LQFP (16x16)
Peripherals: DMA, LVD, POR, PWM, WDT
Connectivity: CSIO, EBI/EMI, I²C, LINbus, UART/USART
Voltage - Supply (Vcc/Vdd): 2.7V ~ 5.5V
Core Size: 32-Bit Single-Core
Data Converters: A/D 16x12b
Core Processor: ARM® Cortex®-M3
Program Memory Type: FLASH
Oscillator Type: Internal
Operating Temperature: -40°C ~ 85°C (TA)
RAM Size: 16K x 8
Program Memory Size: 160KB (160K x 8)
Speed: 144MHz
Mounting Type: Surface Mount
Package / Case: 120-LQFP
Packaging: Tray
Produkt ist nicht verfügbar
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CY9BF114NPQC-G-JNE2 Infineon-CY9B110R_SERIES_32_BIT_ARM_CORTEX_M3_FM3_MICROCONTROLLER-DataSheet-v06_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0edf26e16421&utm_source=cypress&utm_medium=referral&utm_campaign=202110_globe_en_all_integration-files
CY9BF114NPQC-G-JNE2
Hersteller: Infineon Technologies
Description: IC MCU 32BIT 288KB FLASH 100PQFP
DigiKey Programmable: Not Verified
Number of I/O: 83
Supplier Device Package: 100-PQFP (14x20)
Peripherals: DMA, LVD, POR, PWM, WDT
Connectivity: CSIO, EBI/EMI, I²C, LINbus, UART/USART
Voltage - Supply (Vcc/Vdd): 2.7V ~ 5.5V
Core Size: 32-Bit Single-Core
Data Converters: A/D 16x12b
Program Memory Type: FLASH
Oscillator Type: Internal
Operating Temperature: -40°C ~ 85°C (TA)
RAM Size: 32K x 8
Program Memory Size: 288KB (288K x 8)
Speed: 144MHz
Core Processor: ARM® Cortex®-M3
Mounting Type: Surface Mount
Package / Case: 100-BQFP
Packaging: Tray
Produkt ist nicht verfügbar
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CY9BF114NPMC-GE1 Infineon-CY9B110R_SERIES_32_BIT_ARM_CORTEX_M3_FM3_MICROCONTROLLER-DataSheet-v06_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0edf26e16421
Hersteller: Infineon Technologies
Description: MULTI-MARKET MCUS
Number of I/O: 83
Supplier Device Package: 100-LQFP (14x14)
Peripherals: DMA, LVD, POR, PWM, WDT
Connectivity: CSIO, EBI/EMI, I²C, LINbus, UART/USART
Voltage - Supply (Vcc/Vdd): 2.7V ~ 5.5V
Core Processor: ARM® Cortex®-M3
EEPROM Size: 32K x 8
Program Memory Type: FLASH
Oscillator Type: Internal
Operating Temperature: -40°C ~ 85°C (TA)
RAM Size: 32K x 8
Program Memory Size: 256KB (256K x 8)
Speed: 144MHz
Mounting Type: Surface Mount
Package / Case: 100-LQFP
Packaging: Tray
Core Size: 32-Bit
Data Converters: A/D 16x12b
Produkt ist nicht verfügbar
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CY9BF114NPMC-G-JNE1 Infineon-CY9B110R_SERIES_32_BIT_ARM_CORTEX_M3_FM3_MICROCONTROLLER-DataSheet-v06_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0edf26e16421
Hersteller: Infineon Technologies
Description: MULTI-MARKET MCUS
Voltage - Supply (Vcc/Vdd): 2.7V ~ 5.5V
Core Size: 32-Bit
Data Converters: A/D 16x12b
Core Processor: ARM® Cortex®-M3
EEPROM Size: 32K x 8
Program Memory Type: FLASH
Oscillator Type: Internal
Operating Temperature: -40°C ~ 85°C (TA)
RAM Size: 32K x 8
Program Memory Size: 256KB (256K x 8)
Speed: 144MHz
Mounting Type: Surface Mount
Package / Case: 100-LQFP
Packaging: Tray
Number of I/O: 83
Supplier Device Package: 100-LQFP (14x14)
Peripherals: DMA, LVD, POR, PWM, WDT
Connectivity: CSIO, EBI/EMI, I²C, LINbus, UART/USART
Produkt ist nicht verfügbar
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CY9BF115NBGL-GK9E1
CY9BF115NBGL-GK9E1
Hersteller: Infineon Technologies
Description: IC MCU 32BIT 416KB FLASH 112BGA
DigiKey Programmable: Not Verified
Number of I/O: 83
Supplier Device Package: 112-PFBGA (10x10)
Peripherals: DMA, LVD, POR, PWM, WDT
Connectivity: CSIO, EBI/EMI, I2C, LINbus, UART/USART
Voltage - Supply (Vcc/Vdd): 2.7V ~ 5.5V
Core Size: 32-Bit Single-Core
Data Converters: A/D 16x12b
Core Processor: ARM® Cortex®-M3
Program Memory Type: FLASH
Oscillator Type: Internal
Operating Temperature: -40°C ~ 85°C (TA)
RAM Size: 48K x 8
Program Memory Size: 416KB (416K x 8)
Speed: 144MHz
Mounting Type: Surface Mount
Package / Case: 112-LFBGA
Packaging: Tray
Produkt ist nicht verfügbar
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CY9BF115NPMC-G-JNE2 Infineon-CY9B110R_SERIES_32_BIT_ARM_CORTEX_M3_FM3_MICROCONTROLLER-DataSheet-v06_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0edf26e16421&utm_source=cypress&utm_medium=referral&utm_campaign=202110_globe_en_all_integration-files
CY9BF115NPMC-G-JNE2
Hersteller: Infineon Technologies
Description: IC MCU 32BIT 416KB FLASH 100LQFP
DigiKey Programmable: Not Verified
Number of I/O: 83
Supplier Device Package: 100-LQFP (14x14)
Peripherals: DMA, LVD, POR, PWM, WDT
Connectivity: CSIO, EBI/EMI, I²C, LINbus, UART/USART
Voltage - Supply (Vcc/Vdd): 2.7V ~ 5.5V
Core Size: 32-Bit Single-Core
Data Converters: A/D 16x12b
Core Processor: ARM® Cortex®-M3
Program Memory Type: FLASH
Oscillator Type: Internal
Operating Temperature: -40°C ~ 85°C (TA)
RAM Size: 48K x 8
Program Memory Size: 416KB (416K x 8)
Speed: 144MHz
Mounting Type: Surface Mount
Package / Case: 100-LQFP
Packaging: Tray
Produkt ist nicht verfügbar
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CY9BF115NPQC-G-JNE2 Infineon-CY9B110R_SERIES_32_BIT_ARM_CORTEX_M3_FM3_MICROCONTROLLER-DataSheet-v06_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0edf26e16421&utm_source=cypress&utm_medium=referral&utm_campaign=202110_globe_en_all_integration-files
CY9BF115NPQC-G-JNE2
Hersteller: Infineon Technologies
Description: IC MCU 32BIT 416KB FLASH 100PQFP
Supplier Device Package: 100-PQFP (20x14)
Peripherals: DMA, LVD, POR, PWM, WDT
Connectivity: CSIO, EBI/EMI, I²C, LINbus, UART/USART
Voltage - Supply (Vcc/Vdd): 2.7V ~ 5.5V
Core Size: 32-Bit Single-Core
Data Converters: A/D 16x12b
Core Processor: ARM® Cortex®-M3
Program Memory Type: FLASH
Oscillator Type: Internal
Operating Temperature: -40°C ~ 85°C (TA)
RAM Size: 48K x 8
Program Memory Size: 416KB (416K x 8)
Speed: 144MHz
Mounting Type: Surface Mount
Package / Case: 100-BQFP
Packaging: Tray
DigiKey Programmable: Not Verified
Number of I/O: 83
Produkt ist nicht verfügbar
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CY9BF116NPQC-G-JNE2 Infineon-CY9B110R_SERIES_32_BIT_ARM_CORTEX_M3_FM3_MICROCONTROLLER-DataSheet-v06_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0edf26e16421&utm_source=cypress&utm_medium=referral&utm_campaign=202110_globe_en_all_integration-files
CY9BF116NPQC-G-JNE2
Hersteller: Infineon Technologies
Description: IC MCU 32BIT 544KB FLASH 100PQFP
DigiKey Programmable: Not Verified
Number of I/O: 83
Supplier Device Package: 100-PQFP (14x20)
Peripherals: DMA, LVD, POR, PWM, WDT
Connectivity: CSIO, EBI/EMI, I²C, LINbus, UART/USART
Voltage - Supply (Vcc/Vdd): 2.7V ~ 5.5V
Core Size: 32-Bit Single-Core
Data Converters: A/D 16x12b
Core Processor: ARM® Cortex®-M3
Program Memory Type: FLASH
Oscillator Type: Internal
Operating Temperature: -40°C ~ 85°C (TA)
RAM Size: 64K x 8
Program Memory Size: 544KB (544K x 8)
Speed: 144MHz
Mounting Type: Surface Mount
Package / Case: 100-BQFP
Packaging: Tray
Produkt ist nicht verfügbar
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S29GL01GS11FHSS53
S29GL01GS11FHSS53
Hersteller: Infineon Technologies
Description: IC FLASH 1GBIT PARALLEL 64FBGA
Voltage - Supply: 2.7V ~ 3.6V
Operating Temperature: 0°C ~ 85°C (TA)
Memory Type: Non-Volatile
Memory Size: 1Gbit
Mounting Type: Surface Mount
Package / Case: 64-LBGA
Packaging: Tape & Reel (TR)
DigiKey Programmable: Not Verified
Memory Organization: 64M x 16
Access Time: 110 ns
Memory Interface: Parallel
Write Cycle Time - Word, Page: 60ns
Supplier Device Package: 64-FBGA (13x11)
Memory Format: FLASH
Technology: FLASH - NOR
Produkt ist nicht verfügbar
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S29GL01GS11FHSS63 Infineon-1_GBIT_(128_MBYTE)_512_MBIT_(64_MBYTE)_256_MBIT_(32_MBYTE)_128_MBIT_(16_MBYTE)_3.0_V_GL-S_FLASH_MEMORY-DataSheet-v19_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ed07ac14bd5
S29GL01GS11FHSS63
Hersteller: Infineon Technologies
Description: IC FLASH 1GBIT PARALLEL 64FBGA
DigiKey Programmable: Not Verified
Memory Organization: 64M x 16
Access Time: 110 ns
Memory Interface: Parallel
Write Cycle Time - Word, Page: 60ns
Supplier Device Package: 64-FBGA (13x11)
Memory Format: FLASH
Technology: FLASH - NOR
Voltage - Supply: 2.7V ~ 3.6V
Operating Temperature: 0°C ~ 85°C (TA)
Memory Type: Non-Volatile
Memory Size: 1Gbit
Mounting Type: Surface Mount
Package / Case: 64-LBGA
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar
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S29GL01GS11FHSS20
S29GL01GS11FHSS20
Hersteller: Infineon Technologies
Description: IC FLASH 1GBIT PARALLEL 64FBGA
DigiKey Programmable: Not Verified
Memory Organization: 64M x 16
Access Time: 110 ns
Memory Interface: Parallel
Write Cycle Time - Word, Page: 60ns
Supplier Device Package: 64-FBGA (13x11)
Memory Format: FLASH
Technology: FLASH - NOR
Voltage - Supply: 2.7V ~ 3.6V
Operating Temperature: 0°C ~ 85°C (TA)
Memory Type: Non-Volatile
Memory Size: 1Gbit
Mounting Type: Surface Mount
Package / Case: 64-LBGA
Packaging: Tray
Produkt ist nicht verfügbar
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S29GL01GS11FHSS50
S29GL01GS11FHSS50
Hersteller: Infineon Technologies
Description: IC FLASH 1GBIT PARALLEL 64FBGA
DigiKey Programmable: Not Verified
Memory Organization: 64M x 16
Access Time: 110 ns
Memory Interface: Parallel
Write Cycle Time - Word, Page: 60ns
Supplier Device Package: 64-FBGA (13x11)
Memory Format: FLASH
Technology: FLASH - NOR
Voltage - Supply: 2.7V ~ 3.6V
Operating Temperature: 0°C ~ 85°C (TA)
Memory Type: Non-Volatile
Memory Size: 1Gbit
Mounting Type: Surface Mount
Package / Case: 64-LBGA
Packaging: Tray
Produkt ist nicht verfügbar
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S29GL01GS11FHSS60
S29GL01GS11FHSS60
Hersteller: Infineon Technologies
Description: IC FLASH 1GBIT PARALLEL 64FBGA
DigiKey Programmable: Not Verified
Memory Organization: 64M x 16
Access Time: 110 ns
Memory Interface: Parallel
Write Cycle Time - Word, Page: 60ns
Supplier Device Package: 64-FBGA (13x11)
Memory Format: FLASH
Technology: FLASH - NOR
Voltage - Supply: 2.7V ~ 3.6V
Operating Temperature: 0°C ~ 85°C (TA)
Memory Type: Non-Volatile
Memory Size: 1Gbit
Mounting Type: Surface Mount
Package / Case: 64-LBGA
Packaging: Tray
Produkt ist nicht verfügbar
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CYPD2120-20FNXIT Infineon-EZ-PD_CCG2_Datasheet_USB_Type-C_Port_Controller-DataSheet-v15_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ecd9536480b&utm_source=cypress&utm_medium=referral&utm_campaign=202110_globe_en_all_integration-files
Hersteller: Infineon Technologies
Description: IC MCU 32BIT 32KB FLASH 35WLCSP
DigiKey Programmable: Not Verified
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar
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T1500N18TOFVTXPSA1 Infineon-T1500N-DS-v04_00-en_de.pdf?fileId=db3a304323b87bc201240b6f0b1d47c4
T1500N18TOFVTXPSA1
Hersteller: Infineon Technologies
Description: SCR MODULE 1.8KV 3500A DO-200AB
Voltage - Off State: 1.8 kV
Current - On State (It (RMS)) (Max): 3500 A
Voltage - Gate Trigger (Vgt) (Max): 2 V
Current - On State (It (AV)) (Max): 1500 A
Number of SCRs, Diodes: 1 SCR
Current - Non Rep. Surge 50, 60Hz (Itsm): 39000A @ 50Hz
Current - Gate Trigger (Igt) (Max): 350 mA
Current - Hold (Ih) (Max): 500 mA
Structure: Single
Operating Temperature: -40°C ~ 125°C
Mounting Type: Clamp On
Package / Case: DO-200AB, B-PUK
Packaging: Tray
Produkt ist nicht verfügbar
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TLE42672GATMA1 Infineon-TLE4267-2G-DS-v01_00-EN.pdf?fileId=5546d46259d9a4bf0159f95eb6b83e43
TLE42672GATMA1
Hersteller: Infineon Technologies
Description: IC REG LIN 5V 400MA PG-TO263-7-1
Voltage - Input (Max): 40V
Current - Quiescent (Iq): 4 mA
Output Configuration: Positive
Operating Temperature: -40°C ~ 150°C (TJ)
Current - Output: 400mA
Mounting Type: Surface Mount
Output Type: Fixed
Package / Case: TO-263-8, D2PAK (7 Leads + Tab), TO-263CA
Packaging: Cut Tape (CT)
Qualification: AEC-Q100
Grade: Automotive
Current - Supply (Max): 80 mA
Protection Features: Over Current, Over Temperature, Reverse Polarity, Short Circuit, Transient Voltage
Voltage Dropout (Max): 0.6V @ 400mA
PSRR: 54dB (100Hz)
Control Features: Inhibit, Reset
Voltage - Output (Min/Fixed): 5V
Supplier Device Package: PG-TO263-7-1
Number of Regulators: 1
auf Bestellung 994 Stücke:
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AnzahlPrivatkunde
4+5.62 EUR
10+4.21 EUR
25+3.86 EUR
100+3.47 EUR
250+3.28 EUR
500+3.18 EUR
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IRS2104PBF IRS2104PBF.pdf
IRS2104PBF
Hersteller: Infineon Technologies
Description: IC GATE DRVR HALF-BRIDGE 8DIP
Packaging: Tube
Package / Case: 8-DIP (0.300", 7.62mm)
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 150°C (TJ)
Voltage - Supply: 10V ~ 20V
Input Type: Non-Inverting
High Side Voltage - Max (Bootstrap): 600 V
Supplier Device Package: 8-PDIP
Rise / Fall Time (Typ): 70ns, 35ns
Channel Type: Synchronous
Driven Configuration: Half-Bridge
Number of Drivers: 2
Gate Type: IGBT, MOSFET (N-Channel)
Logic Voltage - VIL, VIH: 0.8V, 2.5V
Current - Peak Output (Source, Sink): 290mA, 600mA
DigiKey Programmable: Not Verified
Produkt ist nicht verfügbar
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CY2304NZZXC-1 Infineon-CY2304NZ_Four_Output_PCI-X_and_General_Purpose_Buffer-DataSheet-v12_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ebcd7a92ea3&utm_source=cypress&utm_medium=referral&utm_campaign=202110_globe_en_all_integration-files
CY2304NZZXC-1
Hersteller: Infineon Technologies
Description: IC CLK ZDB 4OUT 140MHZ 8TSSOP
DigiKey Programmable: Not Verified
Number of Circuits: 1
PLL: No
Supplier Device Package: 8-TSSOP
Differential - Input:Output: No/No
Ratio - Input:Output: 1:4
Main Purpose: PCI Express (PCIe)
Voltage - Supply: 3V ~ 3.6V
Operating Temperature: 0°C ~ 70°C
Input: LVCMOS, LVTTL
Frequency - Max: 140MHz
Output: LVCMOS
Mounting Type: Surface Mount
Package / Case: 8-TSSOP (0.173", 4.40mm Width)
Packaging: Tube
auf Bestellung 1290 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
2+18.27 EUR
10+14.33 EUR
25+13.35 EUR
162+12.05 EUR
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IRL1404PBF irl1404pbf.pdf?fileId=5546d462533600a40153565b382824f0
IRL1404PBF
Hersteller: Infineon Technologies
Description: MOSFET N-CH 40V 160A TO220AB
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 160A (Tc)
Rds On (Max) @ Id, Vgs: 4mOhm @ 95A, 10V
Power Dissipation (Max): 200W (Tc)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: TO-220AB
Drive Voltage (Max Rds On, Min Rds On): 4.3V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 140 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 6590 pF @ 25 V
Produkt ist nicht verfügbar
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IRL1404SPBF irl1404spbf.pdf?fileId=5546d462533600a40153565b41eb24f2
IRL1404SPBF
Hersteller: Infineon Technologies
Description: MOSFET N-CH 40V 160A D2PAK
Packaging: Tube
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 160A (Tc)
Rds On (Max) @ Id, Vgs: 4mOhm @ 95A, 10V
Power Dissipation (Max): 3.8W (Ta), 200W (Tc)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: D2PAK
Drive Voltage (Max Rds On, Min Rds On): 4.3V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 140 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 6600 pF @ 25 V
Produkt ist nicht verfügbar
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IRL1404ZSPBF irl1404zpbf.pdf?fileId=5546d462533600a40153565b4b2d24f5
IRL1404ZSPBF
Hersteller: Infineon Technologies
Description: MOSFET N-CH 40V 75A D2PAK
Packaging: Tube
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 75A (Tc)
Rds On (Max) @ Id, Vgs: 3.1mOhm @ 75A, 10V
Power Dissipation (Max): 230W (Tc)
Vgs(th) (Max) @ Id: 2.7V @ 250µA
Supplier Device Package: D2PAK
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±16V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 110 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 5080 pF @ 25 V
Produkt ist nicht verfügbar
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PEF 22508 E V1.1-G PEF22508_Rev2.0.pdf
Hersteller: Infineon Technologies
Description: IC TELECOM INTERFACE 256-LBGA
Power (Watts): 140 mW
Number of Circuits: 8
Supplier Device Package: PG-LBGA-256-1
Current - Supply: 370mA
Voltage - Supply: 1.8V, 3.3V
Operating Temperature: -40°C ~ 85°C
Interface: E1, J1, T1
Function: Line Interface Unit (LIU)
Mounting Type: Surface Mount
Package / Case: 256-LBGA
Packaging: Tray
Produkt ist nicht verfügbar
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IAUC50N08S5N102ATMA1 Infineon-IAUC50N08S5N102-DataSheet-v01_01-EN.pdf?fileId=5546d46279cccfdb0179ccd4039a0208
IAUC50N08S5N102ATMA1
Hersteller: Infineon Technologies
Description: MOSFET_(75V 120V( PG-TDSON-8
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 50A (Tj)
Rds On (Max) @ Id, Vgs: 10.2mOhm @ 25A, 10V
Power Dissipation (Max): 60W (Tc)
Vgs(th) (Max) @ Id: 3.8V @ 24µA
Supplier Device Package: PG-TDSON-8-33
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 80 V
Gate Charge (Qg) (Max) @ Vgs: 21 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1394 pF @ 40 V
Qualification: AEC-Q101
auf Bestellung 3308 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
7+3.14 EUR
11+1.99 EUR
50+1.49 EUR
100+1.33 EUR
500+1.05 EUR
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DDB2U50N08W1RB11BPSA1
Hersteller: Infineon Technologies
Description: LOW POWER EASY
Packaging: Tray
Produkt ist nicht verfügbar
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DDB2U50N08W1RB23BOMA1 DDB2U50N08W1R_B23_Rev02_2011-02-26.pdf
Hersteller: Infineon Technologies
Description: MOD DIODE BRIDGE EASY1B-2-1
Packaging: Tray
Produkt ist nicht verfügbar
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D650N08TXPSA1 D650N.pdf
D650N08TXPSA1
Hersteller: Infineon Technologies
Description: DIODE GEN PURP 800V 650A
Current - Reverse Leakage @ Vr: 20 mA @ 800 V
Voltage - Forward (Vf) (Max) @ If: 950 mV @ 450 A
Voltage - DC Reverse (Vr) (Max): 800 V
Operating Temperature - Junction: -40°C ~ 180°C
Current - Average Rectified (Io): 650A
Technology: Standard
Speed: Standard Recovery >500ns, > 200mA (Io)
Mounting Type: Clamp On
Package / Case: DO-200AA, A-PUK
Packaging: Bulk
Produkt ist nicht verfügbar
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IPT65R155CFD7XTMA1 Infineon-IPT65R155CFD7-DataSheet-v02_01-EN.pdf?fileId=8ac78c8c85ecb3470186794f19d878b3
IPT65R155CFD7XTMA1
Hersteller: Infineon Technologies
Description: HIGH POWER_NEW
Drain to Source Voltage (Vdss): 650 V
Supplier Device Package: PG-HSOF-8-3
Mounting Type: Surface Mount
Package / Case: 8-PowerSFN
Packaging: Tape & Reel (TR)
auf Bestellung 2000 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
2000+2.51 EUR
Mindestbestellmenge: 2000 Stücke
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IPT65R155CFD7XTMA1 Infineon-IPT65R155CFD7-DataSheet-v02_01-EN.pdf?fileId=8ac78c8c85ecb3470186794f19d878b3
IPT65R155CFD7XTMA1
Hersteller: Infineon Technologies
Description: HIGH POWER_NEW
Drain to Source Voltage (Vdss): 650 V
Supplier Device Package: PG-HSOF-8-3
Mounting Type: Surface Mount
Package / Case: 8-PowerSFN
Packaging: Cut Tape (CT)
auf Bestellung 2000 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
3+7.5 EUR
10+4.91 EUR
100+3.44 EUR
500+3.07 EUR
Mindestbestellmenge: 3 Stücke
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