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T470N16TOFXPSA1 T470N16TOFXPSA1 Infineon Technologies Infineon-T470N-DS-v03_01-en_de.pdf?fileId=db3a3043284aacd801286378ae6b532f Description: SCR MODULE 1.6KV 800A TO-200AA
Packaging: Tray
Package / Case: TO-200AA
Mounting Type: Chassis Mount
Operating Temperature: -40°C ~ 125°C
Structure: Single
Current - Hold (Ih) (Max): 300 mA
Current - Gate Trigger (Igt) (Max): 200 mA
Current - Non Rep. Surge 50, 60Hz (Itsm): 7100A @ 50Hz
Number of SCRs, Diodes: 1 SCR
Current - On State (It (AV)) (Max): 470 A
Voltage - Gate Trigger (Vgt) (Max): 2 V
Current - On State (It (RMS)) (Max): 800 A
Voltage - Off State: 1.6 kV
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IAUCN04S7N005ATMA1 IAUCN04S7N005ATMA1 Infineon Technologies Infineon-IAUCN04S7N005-DataSheet-v01_00-EN.pdf?fileId=8ac78c8c8900bb5701890621ba151fdb Description: MOSFET_(20V 40V)
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 175A (Tj)
Rds On (Max) @ Id, Vgs: 0.55mOhm @ 88A, 10V
Power Dissipation (Max): 179W (Tc)
Vgs(th) (Max) @ Id: 3V @ 95µA
Supplier Device Package: PG-TDSON-8-43
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 7V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 127 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 8320 pF @ 20 V
Qualification: AEC-Q101
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IAUCN04S7N005ATMA1 IAUCN04S7N005ATMA1 Infineon Technologies Infineon-IAUCN04S7N005-DataSheet-v01_00-EN.pdf?fileId=8ac78c8c8900bb5701890621ba151fdb Description: MOSFET_(20V 40V)
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 175A (Tj)
Rds On (Max) @ Id, Vgs: 0.55mOhm @ 88A, 10V
Power Dissipation (Max): 179W (Tc)
Vgs(th) (Max) @ Id: 3V @ 95µA
Supplier Device Package: PG-TDSON-8-43
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 7V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 127 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 8320 pF @ 20 V
Qualification: AEC-Q101
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100+2.9 EUR
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IRGP4066-EPBF IRGP4066-EPBF Infineon Technologies IRGP4066%28-E%29PBF.pdf Description: IGBT TRENCH 600V 140A TO-247AD
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 75A
Supplier Device Package: TO-247AD
IGBT Type: Trench
Td (on/off) @ 25°C: 50ns/200ns
Switching Energy: 2.47mJ (on), 2.16mJ (off)
Test Condition: 400V, 75A, 10Ohm, 15V
Gate Charge: 150 nC
Current - Collector (Ic) (Max): 140 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 225 A
Power - Max: 454 W
Produkt ist nicht verfügbar
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IRGP4066PBF IRGP4066PBF Infineon Technologies IRGP4066%28-E%29PBF.pdf Description: IGBT TRENCH 600V 140A TO-247AC
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 75A
Supplier Device Package: TO-247AC
IGBT Type: Trench
Td (on/off) @ 25°C: 50ns/200ns
Switching Energy: 2.47mJ (on), 2.16mJ (off)
Test Condition: 400V, 75A, 10Ohm, 15V
Gate Charge: 150 nC
Current - Collector (Ic) (Max): 140 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 225 A
Power - Max: 454 W
Produkt ist nicht verfügbar
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TC1784F320F180ELBAKXUMA1 Infineon Technologies Description: RISC FLASH MICROCONTROLLER, 32 B
Packaging: Bulk
DigiKey Programmable: Not Verified
Produkt ist nicht verfügbar
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TC1793F512F270EFABKXUMA2 TC1793F512F270EFABKXUMA2 Infineon Technologies Infineon-TC1793-DS-v01_02-en.pdf?fileId=db3a304333227b5e013368d702f5176b Description: IC MCU 32BIT 4MB FLASH 416BGA
Packaging: Tape & Reel (TR)
Package / Case: 416-BGA
Mounting Type: Surface Mount
Speed: 270MHz
Program Memory Size: 4MB (4M x 8)
RAM Size: 288K x 8
Operating Temperature: -40°C ~ 125°C (TA)
Oscillator Type: External
Program Memory Type: FLASH
EEPROM Size: 192K x 8
Core Processor: TriCore™
Data Converters: A/D 8x10b, 44x12b
Core Size: 32-Bit Single-Core
Voltage - Supply (Vcc/Vdd): 1.17V ~ 3.63V
Connectivity: ASC, CANbus, EBI/EMI, FlexRay, MLI, MSC, SSC
Peripherals: DMA, POR, WDT
Supplier Device Package: PG-BGA-416
Number of I/O: 221
DigiKey Programmable: Not Verified
Produkt ist nicht verfügbar
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TC1793F512F270EFABKXUMA2 TC1793F512F270EFABKXUMA2 Infineon Technologies Infineon-TC1793-DS-v01_02-en.pdf?fileId=db3a304333227b5e013368d702f5176b Description: IC MCU 32BIT 4MB FLASH 416BGA
Packaging: Cut Tape (CT)
Package / Case: 416-BGA
Mounting Type: Surface Mount
Speed: 270MHz
Program Memory Size: 4MB (4M x 8)
RAM Size: 288K x 8
Operating Temperature: -40°C ~ 125°C (TA)
Oscillator Type: External
Program Memory Type: FLASH
EEPROM Size: 192K x 8
Core Processor: TriCore™
Data Converters: A/D 8x10b, 44x12b
Core Size: 32-Bit Single-Core
Voltage - Supply (Vcc/Vdd): 1.17V ~ 3.63V
Connectivity: ASC, CANbus, EBI/EMI, FlexRay, MLI, MSC, SSC
Peripherals: DMA, POR, WDT
Supplier Device Package: PG-BGA-416
Number of I/O: 221
DigiKey Programmable: Not Verified
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100+54.53 EUR
250+52.68 EUR
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TC1798F512F300EPABKXUMA2 TC1798F512F300EPABKXUMA2 Infineon Technologies Infineon-TC1798-DS-v01_01-en.pdf?fileId=db3a304336797ff90136ab7ac48c4d00 Description: IC MCU 32BIT 4MB FLASH 516LFBGA
Packaging: Tape & Reel (TR)
Package / Case: 516-LFBGA
Mounting Type: Surface Mount
Speed: 300MHz
Program Memory Size: 4MB (4M x 8)
RAM Size: 288K x 8
Operating Temperature: -40°C ~ 125°C (TA)
Oscillator Type: External
Program Memory Type: FLASH
EEPROM Size: 192K x 8
Core Processor: TriCore™
Data Converters: A/D 8x10b, 64x12b
Core Size: 32-Bit
Voltage - Supply (Vcc/Vdd): 1.235V ~ 3.63V
Connectivity: ASC, CANbus, EBI/EMI, FlexRay, MLI, MSC, SSC
Peripherals: DMA, POR, WDT
Supplier Device Package: PG-LFBGA-516-5
Number of I/O: 238
DigiKey Programmable: Not Verified
Produkt ist nicht verfügbar
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TC1798F512F300EPABKXUMA2 TC1798F512F300EPABKXUMA2 Infineon Technologies Infineon-TC1798-DS-v01_01-en.pdf?fileId=db3a304336797ff90136ab7ac48c4d00 Description: IC MCU 32BIT 4MB FLASH 516LFBGA
Packaging: Cut Tape (CT)
Package / Case: 516-LFBGA
Mounting Type: Surface Mount
Speed: 300MHz
Program Memory Size: 4MB (4M x 8)
RAM Size: 288K x 8
Operating Temperature: -40°C ~ 125°C (TA)
Oscillator Type: External
Program Memory Type: FLASH
EEPROM Size: 192K x 8
Core Processor: TriCore™
Data Converters: A/D 8x10b, 64x12b
Core Size: 32-Bit
Voltage - Supply (Vcc/Vdd): 1.235V ~ 3.63V
Connectivity: ASC, CANbus, EBI/EMI, FlexRay, MLI, MSC, SSC
Peripherals: DMA, POR, WDT
Supplier Device Package: PG-LFBGA-516-5
Number of I/O: 238
DigiKey Programmable: Not Verified
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100+52.42 EUR
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TC1793F512F270EFABKXUMA1 TC1793F512F270EFABKXUMA1 Infineon Technologies INFNS27999-1.pdf?t.download=true&u=5oefqw Description: TC1793 - RISC FLASH MICROCONTROL
Packaging: Bulk
Package / Case: 416-BGA
Mounting Type: Surface Mount
Speed: 270MHz
Program Memory Size: 4MB (4M x 8)
RAM Size: 288K x 8
Operating Temperature: -40°C ~ 125°C (TA)
Oscillator Type: External, Internal
Program Memory Type: FLASH
EEPROM Size: 192K x 8
Core Processor: TriCore™
Data Converters: A/D 48x10b
Core Size: 32-Bit
Voltage - Supply (Vcc/Vdd): 1.17V ~ 1.43V
Connectivity: ASC, CANbus, EBI/EMI, FlexRay, MLI, MSC, SSC
Peripherals: DMA, POR, WDT
Supplier Device Package: PG-BGA-416
Number of I/O: 221
DigiKey Programmable: Not Verified
Produkt ist nicht verfügbar
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TC1782F320F180HLBAKXUMA1 Infineon Technologies Description: RISC FLASH MICROCONTROLLER, 32-B
Packaging: Bulk
DigiKey Programmable: Not Verified
Produkt ist nicht verfügbar
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CYB06445LQI-S3D42 CYB06445LQI-S3D42 Infineon Technologies Infineon-PSOC_6_MCU_CYB06445LQI-S3D42-DataSheet-v01_00-EN.pdf?fileId=8ac78c8c7ddc01d7017dfae769823afe Description: IC MCU 32BIT 512KB FLASH 68QFN
Packaging: Tray
Package / Case: 68-VFQFN Exposed Pad
Mounting Type: Surface Mount
Speed: 100MHz, 150MHz
Program Memory Size: 512KB (512K x 8)
RAM Size: 256K x 8
Operating Temperature: -40°C ~ 85°C (TA)
Oscillator Type: External, Internal
Program Memory Type: FLASH
Core Processor: ARM® Cortex®-M0+, ARM® Cortex®-M4F
Data Converters: A/D 16x10b SAR, 16x12b Sigma-Delta; D/A 2x7/8b
Core Size: 32-Bit Dual-Core
Voltage - Supply (Vcc/Vdd): 1.7V ~ 3.6V
Connectivity: CANbus, eMMC/SD/SDIO, FIFO, I2C, IrDA, LINbus, Microwire, QSPI, SmartCard, SPI, SSP, UART/USART, USB
Peripherals: Brown-out Detect/Reset, CapSense, Crypto - AES, DMA, LCD, LVD, PMC, POR, PWM, RSA, SHA, Temp Sensor, TRNG, WDT
Supplier Device Package: 68-QFN (8x8)
Number of I/O: 53
DigiKey Programmable: Not Verified
auf Bestellung 1850 Stücke:
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2+20.25 EUR
10+15.85 EUR
25+14.74 EUR
100+13.54 EUR
250+12.96 EUR
500+12.61 EUR
1300+12.23 EUR
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CY8C614AAZI-S2F14 CY8C614AAZI-S2F14 Infineon Technologies Infineon-PSoC_6_MCU_CY8C61x8_CY8C61xA-DataSheet-v06_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0eea1f6b72fa Description: IC MCU 32BIT 2MB FLASH 128TQFP
Packaging: Tray
Package / Case: 128-LQFP
Mounting Type: Surface Mount
Speed: 150MHz
Program Memory Size: 2MB (2M x 8)
RAM Size: 1M x 8
Operating Temperature: -40°C ~ 85°C (TA)
Oscillator Type: External, Internal
Program Memory Type: FLASH
Core Processor: ARM® Cortex®-M4F
Data Converters: A/D 16x10b SAR, 16x12b Sigma-Delta; D/A 2x7/8b
Core Size: 32-Bit
Voltage - Supply (Vcc/Vdd): 1.7V ~ 3.6V
Connectivity: eMMC/SD/SDIO, FIFO, I2C, IrDA, LINbus, Microwire, QSPI, SmartCard, SPI, SSP, UART/USART, USB
Peripherals: Brown-out Detect/Reset, CapSense, DMA, I2S, LCD, LVD, PMC, POR, PWM, Temp Sensor, WDT
Supplier Device Package: 128-TQFP (14x20)
Number of I/O: 102
DigiKey Programmable: Not Verified
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1+26.73 EUR
10+21.02 EUR
72+18.34 EUR
144+17.71 EUR
504+16.81 EUR
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BCR 153T E6327 BCR 153T E6327 Infineon Technologies BCR153%20Series.pdf Description: TRANS PREBIAS PNP 50V 0.1A SC75
Packaging: Tape & Reel (TR)
Package / Case: SC-75, SOT-416
Mounting Type: Surface Mount
Transistor Type: PNP - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 300mV @ 1mA, 20mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 20 @ 20mA, 5V
Supplier Device Package: PG-SC75-3D
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 250 mW
Frequency - Transition: 200 MHz
Resistor - Base (R1): 2.2 kOhms
Resistor - Emitter Base (R2): 2.2 kOhms
Produkt ist nicht verfügbar
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CY25100KZXC46 Infineon Technologies Infineon-CY25100_Field_and_Factory_Programmable_Spread_Spectrum_Clock_Generator_for_EMI_Reduction-DataSheet-v14_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ec4fa073a62 Description: IC CLOCK GENERATOR
Packaging: Bulk
DigiKey Programmable: Not Verified
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C161PILF3VCABXUMA1 C161PILF3VCABXUMA1 Infineon Technologies 2156_c161pi_ds_199907.pdf_folderid%3Ddb3a304412b407950112b4391ae36c3b%26fileid%3Ddb3a304412b407950112b4391b6f6c3c.pdf Description: SAB-C161PI - LEGACY 16-BIT MICRO
Packaging: Bulk
Package / Case: 100-LQFP
Mounting Type: Surface Mount
Speed: 20MHz
RAM Size: 3K x 8
Operating Temperature: 0°C ~ 70°C (TA)
Oscillator Type: Internal
Program Memory Type: ROMless
Core Processor: C166
Data Converters: A/D 4x10b
Core Size: 16-Bit
Voltage - Supply (Vcc/Vdd): 3V ~ 3.6V
Connectivity: EBI/EMI, I2C, SPI, UART/USART
Peripherals: POR, PWM, WDT
Supplier Device Package: PG-TQFP-100-1
Number of I/O: 76
DigiKey Programmable: Not Verified
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S29GL512S10DHI010 S29GL512S10DHI010 Infineon Technologies infineon-s29gl01gs-s29gl512s-s29gl256s-s29gl128s-128-mb-256-mb-512-mb-1-gb-gl-s-mirrorbit-tm-flash-parallel-3-datasheet-en.pdf?fileId=8ac78c8c7d0d8da4017d0ed07ac14bd5&utm_source=cypress&utm_medium Description: IC FLASH 512MBIT PARALLEL 64FBGA
Packaging: Tray
Package / Case: 64-LBGA
Mounting Type: Surface Mount
Memory Size: 512Mbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 2.7V ~ 3.6V
Technology: FLASH - NOR
Memory Format: FLASH
Supplier Device Package: 64-FBGA (9x9)
Write Cycle Time - Word, Page: 60ns
Memory Interface: Parallel
Access Time: 100 ns
Memory Organization: 32M x 16
DigiKey Programmable: Not Verified
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IRFR120ZPBF IRFR120ZPBF Infineon Technologies irfr120zpbf.pdf?fileId=5546d462533600a40153562d2f422050 Description: MOSFET N-CH 100V 8.7A DPAK
Packaging: Tube
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 8.7A (Tc)
Rds On (Max) @ Id, Vgs: 190mOhm @ 5.2A, 10V
Power Dissipation (Max): 35W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-252AA (DPAK)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 10 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 310 pF @ 25 V
Produkt ist nicht verfügbar
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MC68HC705C8ACPB Infineon Technologies Description: MC68HC8-BMICROCONTROLLER
Packaging: Bulk
Produkt ist nicht verfügbar
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IRL3715ZPBF IRL3715ZPBF Infineon Technologies IRL3715Z(S,L)PbF.pdf Description: MOSFET N-CH 20V 50A TO220AB
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 50A (Tc)
Rds On (Max) @ Id, Vgs: 11mOhm @ 15A, 10V
Power Dissipation (Max): 45W (Tc)
Vgs(th) (Max) @ Id: 2.55V @ 250µA
Supplier Device Package: TO-220AB
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 11 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 870 pF @ 10 V
Produkt ist nicht verfügbar
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TLE493DW2B6MS2GOTOBO1 TLE493DW2B6MS2GOTOBO1 Infineon Technologies infineon-infineon-3dms2go-tle493d-w2b6-um-en-usermanual-en.pdf Description: 3D MAGNETIC SENSOR 2GO
Packaging: Bulk
Interface: I2C, Serial
Contents: Board(s)
Voltage - Supply: 2.8V ~ 3.5V
Sensor Type: Magnetic, Linear, Rotary Position
Utilized IC / Part: TLE493D-W2B6
Supplied Contents: Board(s)
Sensing Range: ±160mT ~ ±230mT
Produkt ist nicht verfügbar
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IR2113PBF IR2113PBF Infineon Technologies IR2113SPBF.pdf description Description: IC GATE DRVR HALF-BRIDGE 14DIP
Packaging: Tube
Package / Case: 14-DIP (0.300", 7.62mm)
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 150°C (TJ)
Voltage - Supply: 3.3V ~ 20V
Input Type: Non-Inverting
High Side Voltage - Max (Bootstrap): 600 V
Supplier Device Package: 14-DIP
Rise / Fall Time (Typ): 25ns, 17ns
Channel Type: Independent
Driven Configuration: Half-Bridge
Number of Drivers: 2
Gate Type: IGBT, MOSFET (N-Channel)
Logic Voltage - VIL, VIH: 6V, 9.5V
Current - Peak Output (Source, Sink): 2A, 2A
DigiKey Programmable: Not Verified
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10+5.71 EUR
25+5.25 EUR
100+4.75 EUR
250+4.5 EUR
500+4.36 EUR
1000+4.24 EUR
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IRF7314PBF IRF7314PBF Infineon Technologies irf7314pbf.pdf?fileId=5546d462533600a4015355f57b901b2c description Description: MOSFET 2P-CH 20V 5.3A 8SO
Packaging: Tube
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Configuration: 2 P-Channel (Dual)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 2W
Drain to Source Voltage (Vdss): 20V
Current - Continuous Drain (Id) @ 25°C: 5.3A
Input Capacitance (Ciss) (Max) @ Vds: 780pF @ 15V
Rds On (Max) @ Id, Vgs: 58mOhm @ 2.9A, 4.5V
Gate Charge (Qg) (Max) @ Vgs: 29nC @ 4.5V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 700mV @ 250µA
Supplier Device Package: 8-SO
Produkt ist nicht verfügbar
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CY8C20110-LDX2I CY8C20110-LDX2I Infineon Technologies download Description: IC CAPSENSE EXP 10 I/O 16QFN
DigiKey Programmable: Not Verified
LED Driver Channels: Up to 10
Proximity Detection: No
Supplier Device Package: 16-QFN (3x3)
Number of Inputs: Up to 10
Current - Supply: 1.5mA
Voltage - Supply: 2.4V ~ 5.25V
Operating Temperature: -40°C ~ 85°C
Type: Buttons
Interface: I²C
Mounting Type: Surface Mount
Package / Case: 16-UFQFN
Packaging: Tray
Produkt ist nicht verfügbar
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IPP023N10N5XKSA1 IPP023N10N5XKSA1 Infineon Technologies Infineon-IPP023N10N5-DS-v02_03-EN.pdf?fileId=5546d461454603990145d5a675f86494 Description: TRENCH >=100V
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 120A (Tc)
Rds On (Max) @ Id, Vgs: 2.3mOhm @ 100A, 10V
Power Dissipation (Max): 375W (Tc)
Vgs(th) (Max) @ Id: 3.8V @ 270µA
Supplier Device Package: PG-TO220-3-1
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 210 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 15600 pF @ 50 V
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S29GL128P90TFCR20 S29GL128P90TFCR20 Infineon Technologies 128_Mbit_3_V_Page_Flash_with_90_nm_MirrorBit_Process_Technology-DataSheet-v03_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ed7850458a5&utm_source=cypress&utm_medium=ref Description: IC FLASH 128MBIT PARALLEL 56TSOP
Packaging: Tray
Package / Case: 56-TFSOP (0.724", 18.40mm Width)
Mounting Type: Surface Mount
Memory Size: 128Mbit
Memory Type: Non-Volatile
Operating Temperature: 0°C ~ 85°C (TA)
Voltage - Supply: 3V ~ 3.6V
Technology: FLASH - NOR
Memory Format: FLASH
Supplier Device Package: 56-TSOP
Write Cycle Time - Word, Page: 90ns
Memory Interface: Parallel
Access Time: 90 ns
Memory Organization: 16M x 8
DigiKey Programmable: Verified
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S29GL128P90TFCR10 S29GL128P90TFCR10 Infineon Technologies 128_Mbit_3_V_Page_Flash_with_90_nm_MirrorBit_Process_Technology-DataSheet-v03_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ed7850458a5&utm_source=cypress&utm_medium=ref Description: IC FLASH 128MBIT PARALLEL 56TSOP
Packaging: Tray
Package / Case: 56-TFSOP (0.724", 18.40mm Width)
Mounting Type: Surface Mount
Memory Size: 128Mbit
Memory Type: Non-Volatile
Operating Temperature: 0°C ~ 85°C (TA)
Voltage - Supply: 3V ~ 3.6V
Technology: FLASH - NOR
Memory Format: FLASH
Supplier Device Package: 56-TSOP
Write Cycle Time - Word, Page: 90ns
Memory Interface: Parallel
Access Time: 90 ns
Memory Organization: 16M x 8
DigiKey Programmable: Verified
auf Bestellung 182 Stücke:
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25+12 EUR
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IRF7820PBF IRF7820PBF Infineon Technologies irf7820pbf.pdf?fileId=5546d462533600a401535608c10e1d00 Description: MOSFET N CH 200V 3.7A 8-SO
Input Capacitance (Ciss) (Max) @ Vds: 1750 pF @ 100 V
Gate Charge (Qg) (Max) @ Vgs: 44 nC @ 10 V
Drain to Source Voltage (Vdss): 200 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Supplier Device Package: 8-SO
Vgs(th) (Max) @ Id: 5V @ 100µA
Power Dissipation (Max): 2.5W (Ta)
Rds On (Max) @ Id, Vgs: 78mOhm @ 2.2A, 10V
Current - Continuous Drain (Id) @ 25°C: 3.7A (Ta)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Packaging: Tube
Produkt ist nicht verfügbar
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IRFSL7534PBF IRFSL7534PBF Infineon Technologies irfs7534pbf.pdf?fileId=5546d462533600a4015364c3e2c629c7 Description: MOSFET N-CH 60V 195A TO262
Input Capacitance (Ciss) (Max) @ Vds: 10034 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 279 nC @ 10 V
Drain to Source Voltage (Vdss): 60 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Supplier Device Package: TO-262
Vgs(th) (Max) @ Id: 3.7V @ 250µA
Power Dissipation (Max): 294W (Tc)
Rds On (Max) @ Id, Vgs: 2.4mOhm @ 100A, 10V
Current - Continuous Drain (Id) @ 25°C: 195A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-262-3 Long Leads, I2PAK, TO-262AA
Packaging: Tube
Produkt ist nicht verfügbar
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IRF7473PBF IRF7473PBF Infineon Technologies irf7473pbf.pdf?fileId=5546d462533600a4015355ff504c1c20 Description: MOSFET N-CH 100V 6.9A 8SO
Packaging: Tube
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 6.9A (Ta)
Rds On (Max) @ Id, Vgs: 26mOhm @ 4.1A, 10V
Power Dissipation (Max): 2.5W (Ta)
Vgs(th) (Max) @ Id: 5.5V @ 250µA
Supplier Device Package: 8-SO
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 61 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3180 pF @ 25 V
Produkt ist nicht verfügbar
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IRF8714TRPBFXTMA1 Infineon Technologies Description: TRENCH <= 40V
Packaging: Tape & Reel (TR)
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IPF011N08NM6ATMA1 IPF011N08NM6ATMA1 Infineon Technologies infineon-ipf011n08nm6-datasheet-en.pdf Description: TRENCH 40<-<100V
Packaging: Tape & Reel (TR)
Package / Case: TO-263-7, D2PAK (6 Leads + Tab)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 40A (Ta), 271A (Tc)
Rds On (Max) @ Id, Vgs: 1.1mOhm @ 100A, 10V
Power Dissipation (Max): 3.8W (Ta), 375W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 279µA
Supplier Device Package: PG-TO263-7-3
Drive Voltage (Max Rds On, Min Rds On): 8V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 80 V
Gate Charge (Qg) (Max) @ Vgs: 181 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 13000 pF @ 40 V
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AUIRF3710ZSTRL AUIRF3710ZSTRL Infineon Technologies Infineon-auirf3710z-DataSheet-v01_01-EN.pdf?fileId=5546d4626c1f3dc3016c4d844dab18b7 Description: MOSFET N-CH 100V 59A D2PAK
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 59A (Tc)
Rds On (Max) @ Id, Vgs: 18mOhm @ 35A, 10V
Power Dissipation (Max): 160W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: PG-TO263-3
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 120 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2900 pF @ 25 V
Qualification: AEC-Q101
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800+3.58 EUR
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IRPS5401MXI03TRP Infineon Technologies Infineon-Digital_voltage_regulator_PMIC_IRPS5401-PB-v01_01-EN.pdf?fileId=5546d46258fc0bc10159957c0dbf2313 Description: IC REG
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar
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IRPS5401MXI04TRPAUMA1 IRPS5401MXI04TRPAUMA1 Infineon Technologies Infineon-IRPS5401M-DS-v02_01-EN.pdf?fileId=5546d4625cc9456a015cd69d402139db Description: IC REG ADJ 50A 5OUT 56QFN
Packaging: Tape & Reel (TR)
Package / Case: 56-PowerVFQFN
Output Type: Adjustable
Mounting Type: Surface Mount
Number of Outputs: 5
Current - Output: 50A
Operating Temperature: -40°C ~ 85°C (TA)
Output Configuration: Negative
Frequency - Switching: 200kHz ~ 1MHz
Voltage - Input (Max): 12V
Supplier Device Package: 56-QFN (7x7)
Synchronous Rectifier: Yes
Voltage - Output (Max): 3.6V
Voltage - Input (Min): 5.5V
Voltage - Output (Min/Fixed): 0.5V
Produkt ist nicht verfügbar
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BGMC1210E6327XUMA1 BGMC1210E6327XUMA1 Infineon Technologies Infineon-BGMC1210-DataSheet-v01_05-EN.pdf?fileId=8ac78c8c8a44f57b018a45a2c3530295 Description: WIRELESS INFRASTRUCTURE
Packaging: Tape & Reel (TR)
Package / Case: 32-VFQFN Exposed Pad
Mounting Type: Surface Mount
RF Type: Cellular
Voltage - Supply: 3.1V ~ 5.5V
Current - Supply: 4.2mA
Supplier Device Package: PG-VQFN-32-24
Produkt ist nicht verfügbar
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S2GOMEMSMICIM69DTOBO1 S2GOMEMSMICIM69DTOBO1 Infineon Technologies Infineon-IM69D130_Microphone_Shield2Go-GS-v01_00-EN.pdf?fileId=5546d462677d0f4601677f3486ed0941 Description: BOARD
Packaging: Bulk
Function: Microphone
Type: Audio
Contents: Board(s)
Utilized IC / Part: IM69D130
Platform: Shield2Go
Produkt ist nicht verfügbar
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IRF7389PBF IRF7389PBF Infineon Technologies irf7389pbf.pdf?fileId=5546d462533600a4015355f9f3441b90 description Description: MOSFET N/P-CH 30V 8SO
Packaging: Tube
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Configuration: N and P-Channel
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 2.5W
Drain to Source Voltage (Vdss): 30V
Input Capacitance (Ciss) (Max) @ Vds: 650pF @ 25V
Rds On (Max) @ Id, Vgs: 29mOhm @ 5.8A, 10V
Gate Charge (Qg) (Max) @ Vgs: 33nC @ 10V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 1V @ 250µA
Supplier Device Package: 8-SO
Produkt ist nicht verfügbar
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TLE4984CHTE6747HAMA1 TLE4984CHTE6747HAMA1 Infineon Technologies TLE4984C_PB.pdf?fileId=db3a304335c2937a0135ce52edfb6c0e Description: MAG SWITCH SPEED SENSOR 3SSO
Features: Temperature Compensated
Packaging: Cut Tape (CT)
Package / Case: 3-SSIP Module
Output Type: Open Collector
Polarization: South Pole
Mounting Type: Through Hole
Function: Unipolar Switch
Operating Temperature: -40°C ~ 150°C
Voltage - Supply: 2.7V ~ 18V
Technology: Hall Effect
Sensing Range: 13.9mT Trip, 5mT Release
Current - Output (Max): 20mA
Current - Supply (Max): 6mA
Supplier Device Package: PG-SSO-3-91
Test Condition: 25°C
auf Bestellung 1506 Stücke:
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3+7.27 EUR
5+6.51 EUR
10+6.22 EUR
25+5.88 EUR
50+5.65 EUR
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500+5.02 EUR
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TLE4984CHTE6747HAMA1 TLE4984CHTE6747HAMA1 Infineon Technologies TLE4984C_PB.pdf?fileId=db3a304335c2937a0135ce52edfb6c0e Description: MAG SWITCH SPEED SENSOR 3SSO
Features: Temperature Compensated
Packaging: Tape & Box (TB)
Package / Case: 3-SSIP Module
Output Type: Open Collector
Polarization: South Pole
Mounting Type: Through Hole
Function: Unipolar Switch
Operating Temperature: -40°C ~ 150°C
Voltage - Supply: 2.7V ~ 18V
Technology: Hall Effect
Sensing Range: 13.9mT Trip, 5mT Release
Current - Output (Max): 20mA
Current - Supply (Max): 6mA
Supplier Device Package: PG-SSO-3-91
Test Condition: 25°C
Produkt ist nicht verfügbar
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TLE4983CHTE6747HAMA1 TLE4983CHTE6747HAMA1 Infineon Technologies TLE498320080527TLE4983CHTE6747supplementV10.pdf Description: MAG SWITCH SPEED SENSOR 3SSO
Features: Programmable
Packaging: Cut Tape (CT)
Package / Case: 3-SSIP Module
Polarization: North Pole
Mounting Type: Through Hole
Function: Programmable
Operating Temperature: -40°C ~ 150°C
Technology: Hall Effect
Current - Supply (Max): 8mA
Supplier Device Package: PG-SSO-3-91
Produkt ist nicht verfügbar
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TLE4983CHTE6747HAMA1 TLE4983CHTE6747HAMA1 Infineon Technologies TLE498320080527TLE4983CHTE6747supplementV10.pdf Description: MAG SWITCH SPEED SENSOR 3SSO
Features: Programmable
Packaging: Tape & Box (TB)
Package / Case: 3-SSIP Module
Polarization: North Pole
Mounting Type: Through Hole
Function: Programmable
Operating Temperature: -40°C ~ 150°C
Technology: Hall Effect
Current - Supply (Max): 8mA
Supplier Device Package: PG-SSO-3-91
auf Bestellung 1500 Stücke:
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1500+6.16 EUR
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TLE49421CHAMA2 TLE49421CHAMA2 Infineon Technologies Infineon-TLE4942-1C-DS-v04_00-EN.pdf?fileId=5546d4625607bd13015654bf69b908cb Description: MAGNETIC SWITCH SPECIAL PURPOSE
Packaging: Cut Tape (CT)
Package / Case: 2-SIP, SSO-2-2
Output Type: Current Source
Polarization: North Pole, South Pole
Mounting Type: Through Hole
Function: Special Purpose
Operating Temperature: -40°C ~ 150°C (TJ)
Voltage - Supply: 4.5V ~ 20V
Technology: Hall Effect
Current - Supply (Max): 16.8mA
Supplier Device Package: PG-SSO-2-2
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TLE49421CHAMA2 TLE49421CHAMA2 Infineon Technologies Infineon-TLE4942-1C-DS-v04_00-EN.pdf?fileId=5546d4625607bd13015654bf69b908cb Description: MAGNETIC SWITCH SPECIAL PURPOSE
Supplier Device Package: PG-SSO-2-2
Current - Supply (Max): 16.8mA
Technology: Hall Effect
Voltage - Supply: 4.5V ~ 20V
Operating Temperature: -40°C ~ 150°C (TJ)
Function: Special Purpose
Mounting Type: Through Hole
Polarization: North Pole, South Pole
Output Type: Current Source
Package / Case: 2-SIP, SSO-2-2
Packaging: Tape & Box (TB)
Produkt ist nicht verfügbar
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TLE4953CE0184HAMA1 Infineon Technologies Description: SPEED & CURRENT SENSORS PG-SSO-2
Sensing Range: ±120mT
Technology: Hall Effect
Voltage - Supply: 4.5V ~ 20V
Operating Temperature: -40°C ~ 150°C (TJ)
Function: Special Purpose
Mounting Type: Through Hole
Polarization: North Pole, South Pole
Output Type: Current Source, PWM
Package / Case: 2-SIP, SSO-2-2
Packaging: Tape & Box (TB)
Test Condition: 25°C
Supplier Device Package: PG-SSO-2-4
Current - Supply (Max): 16.8mA
Produkt ist nicht verfügbar
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TLE4929CX2AM38NHAMA1 TLE4929CX2AM38NHAMA1 Infineon Technologies Infineon-TLE4929C_59-EEPROM_Programming_Guide-ApplicationNotes-v01_02-EN.pdf?fileId=5546d462636cc8fb01636f880b304ea9 Description: SPEED & CURRENT SENSORS PG-SSO-3
Sensing Range: ±120mT
Resolution: 16 b
Technology: Hall Effect
Voltage - Supply: 4V ~ 16V
Operating Temperature: -40°C ~ 175°C (TJ)
Axis: Single
Mounting Type: Through Hole
Output Type: Open Drain
Package / Case: 3-SIP Module
Features: Programmable, Temperature Compensated
Packaging: Tape & Box (TB)
Supplier Device Package: PG-SSO-3-52
Current - Supply (Max): 13.4mA
Current - Output (Max): 15mA
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TLE4983CHTNE6847HAMA1 Infineon Technologies fundamentals-of-power-semiconductors Description: MAG SWITCH SPEED SENSOR 3SSO
Qualification: AEC-Q100
Grade: Automotive
Packaging: Bulk
auf Bestellung 13500 Stücke:
Lieferzeit 10-14 Tag (e)
104+5.82 EUR
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TLE4924C2E6547HAMA1 TLE4924C2E6547HAMA1 Infineon Technologies TLE4924C_pb.pdf?fileId=db3a304332ae7b090132af75a28d013c Description: MAGNETIC SWITCH SSO-3-92
Supplier Device Package: PG-SSO-3-92
Mounting Type: Through Hole
Package / Case: 3-SSIP Module
Packaging: Tape & Box (TB)
Produkt ist nicht verfügbar
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TLE4998S3CHAMA1 TLE4998S3CHAMA1 Infineon Technologies TLE4998S3C_Data_Sheet_Rev1.0.pdf?folderId=db3a30431ce5fb52011d3dd6e8012582&fileId=db3a30431ce5fb52011d3ecb064425c2 Description: SENSOR HALL EFFECT SENT SM8
Qualification: AEC-Q100
Grade: Automotive
Supplier Device Package: SM8
Current - Supply (Max): 8mA
Current - Output (Max): 5mA
Sensing Range: ±50mT, ±100mT, ±200mT
Resolution: 16 b
Technology: Hall Effect
Bandwidth: Programmable
Voltage - Supply: 4.5V ~ 5.5V
Operating Temperature: -40°C ~ 125°C (TJ)
Axis: Single
Mounting Type: Surface Mount
Output Type: SENT
Package / Case: SOT-223-8
Features: Selectable Scale, Temperature Compensated
Packaging: Tape & Box (TB)
Produkt ist nicht verfügbar
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CYAT837AZA77-42002 Infineon Technologies Infineon-CYAT837AZA98-42002-DataSheet-v01_00-EN.pdf?fileId=8ac78c8c82ce566401837ef647900bf5 Description: PSOC BASED - TRUETOUCH
Packaging: Tray
Package / Case: 128-LQFP
Mounting Type: Surface Mount
Interface: I²C
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 1.71V ~ 1.95V, 3V ~ 5.5V
Supplier Device Package: 128-TQFP (14x20)
Touchscreen: 2 Wire Capacitive
Produkt ist nicht verfügbar
 Mindestbestellmenge: 720 Stücke
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CYAT837AZA88-42002 Infineon Technologies Infineon-CYAT837AZA98-42002-DataSheet-v01_00-EN.pdf?fileId=8ac78c8c82ce566401837ef647900bf5 Description: PSOC BASED - TRUETOUCH
Packaging: Tray
Package / Case: 128-LQFP
Mounting Type: Surface Mount
Interface: I²C
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 1.71V ~ 1.95V, 3V ~ 5.5V
Supplier Device Package: 128-TQFP (14x20)
Touchscreen: 2 Wire Capacitive
Produkt ist nicht verfügbar
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CYAT837AZA98-42002 Infineon Technologies Infineon-CYAT837AZA98-42002-DataSheet-v01_00-EN.pdf?fileId=8ac78c8c82ce566401837ef647900bf5 Description: PSOC BASED - TRUETOUCH
Packaging: Tray
Package / Case: 128-LQFP
Mounting Type: Surface Mount
Interface: I²C
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 1.71V ~ 1.95V, 3V ~ 5.5V
Supplier Device Package: 128-TQFP (14x20)
Touchscreen: 2 Wire Capacitive
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CYAT837AZS77-42002 CYAT837AZS77-42002 Infineon Technologies Infineon-CYAT837AZA98-42002-DataSheet-v01_00-EN.pdf?fileId=8ac78c8c82ce566401837ef647900bf5 Description: PSOC BASED - TRUETOUCH
Packaging: Tray
Package / Case: 128-LQFP
Mounting Type: Surface Mount
Interface: I2C
Operating Temperature: -40°C ~ 105°C (TA)
Voltage - Supply: 1.71V ~ 1.95V, 3V ~ 5.5V
Supplier Device Package: 128-TQFP (14x20)
Touchscreen: 2 Wire Capacitive
Grade: Automotive
Qualification: AEC-Q100
Produkt ist nicht verfügbar
 Mindestbestellmenge: 720 Stücke
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CYAT837AZS88-42002 CYAT837AZS88-42002 Infineon Technologies Infineon-CYAT837AZA98-42002-DataSheet-v01_00-EN.pdf?fileId=8ac78c8c82ce566401837ef647900bf5 Description: PSOC BASED - TRUETOUCH
Packaging: Tray
Package / Case: 128-LQFP
Mounting Type: Surface Mount
Interface: I2C
Operating Temperature: -40°C ~ 105°C (TA)
Voltage - Supply: 1.71V ~ 1.95V, 3V ~ 5.5V
Supplier Device Package: 128-TQFP (14x20)
Touchscreen: 2 Wire Capacitive
Grade: Automotive
Qualification: AEC-Q100
Produkt ist nicht verfügbar
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S99-50577 Infineon Technologies Description: INFINEON
Mounting Type: Surface Mount
Package / Case: 16-SOIC (0.295", 7.50mm Width)
Packaging: Bulk
Memory Interface: SPI - Quad I/O
Write Cycle Time - Word, Page: 750µs
Supplier Device Package: 16-SOIC
Memory Format: FLASH
Clock Frequency: 133 MHz
Technology: FLASH - NOR (SLC)
Voltage - Supply: 2.7V ~ 3.6V
Operating Temperature: -40°C ~ 85°C (TA)
Memory Type: Non-Volatile
Memory Size: 512Mbit
Memory Organization: 64M x 8
Access Time: 6.5 ns
Produkt ist nicht verfügbar
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IRFR24N15DPBF IRFR24N15DPBF Infineon Technologies irfr24n15dpbf.pdf?fileId=5546d462533600a40153562dc1162081 description Description: MOSFET N-CH 150V 24A DPAK
Packaging: Tube
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 24A (Tc)
Rds On (Max) @ Id, Vgs: 95mOhm @ 14A, 10V
Power Dissipation (Max): 140W (Tc)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: TO-252AA (DPAK)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 150 V
Gate Charge (Qg) (Max) @ Vgs: 45 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 890 pF @ 25 V
Produkt ist nicht verfügbar
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SAK-TC1367A264F150EFAAKXUMA1 Infineon Technologies Description: RISC FLASH MICROCONTROLLER, 32-B
Packaging: Bulk
DigiKey Programmable: Not Verified
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30+18.87 EUR
Mindestbestellmenge: 30 Stücke
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IPP039N10N5XKSA1 IPP039N10N5XKSA1 Infineon Technologies infineon-ipp039n10n5-ds-en.pdf?fileId=5546d4625b3ca4ec015b626e5b4367fa Description: MV POWER MOS
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 100A (Tc)
Rds On (Max) @ Id, Vgs: 3.9mOhm @ 50A, 10V
Power Dissipation (Max): 188W (Tc)
Vgs(th) (Max) @ Id: 3.8V @ 125µA
Supplier Device Package: PG-TO220-3
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 95 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 7000 pF @ 50 V
Produkt ist nicht verfügbar
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SHIELDBTS500151TADTOBO1 SHIELDBTS500151TADTOBO1 Infineon Technologies Infineon-Protected_Switch_Shield_with_BTS50015-1TAD_for_Arduino-GS-v01_00-EN.pdf?fileId=5546d462580663ef01583e4e1c0d1844 Description: EVAL 12V PROTECT SWITCH SHIELD
Packaging: Bulk
Function: Switch
Type: Power Management
Contents: Board(s)
Utilized IC / Part: BTS50015-1TAD
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T470N16TOFXPSA1 Infineon-T470N-DS-v03_01-en_de.pdf?fileId=db3a3043284aacd801286378ae6b532f
T470N16TOFXPSA1
Hersteller: Infineon Technologies
Description: SCR MODULE 1.6KV 800A TO-200AA
Packaging: Tray
Package / Case: TO-200AA
Mounting Type: Chassis Mount
Operating Temperature: -40°C ~ 125°C
Structure: Single
Current - Hold (Ih) (Max): 300 mA
Current - Gate Trigger (Igt) (Max): 200 mA
Current - Non Rep. Surge 50, 60Hz (Itsm): 7100A @ 50Hz
Number of SCRs, Diodes: 1 SCR
Current - On State (It (AV)) (Max): 470 A
Voltage - Gate Trigger (Vgt) (Max): 2 V
Current - On State (It (RMS)) (Max): 800 A
Voltage - Off State: 1.6 kV
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1+217.07 EUR
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IAUCN04S7N005ATMA1 Infineon-IAUCN04S7N005-DataSheet-v01_00-EN.pdf?fileId=8ac78c8c8900bb5701890621ba151fdb
IAUCN04S7N005ATMA1
Hersteller: Infineon Technologies
Description: MOSFET_(20V 40V)
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 175A (Tj)
Rds On (Max) @ Id, Vgs: 0.55mOhm @ 88A, 10V
Power Dissipation (Max): 179W (Tc)
Vgs(th) (Max) @ Id: 3V @ 95µA
Supplier Device Package: PG-TDSON-8-43
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 7V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 127 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 8320 pF @ 20 V
Qualification: AEC-Q101
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AnzahlPrivatkunde
5000+1.87 EUR
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IAUCN04S7N005ATMA1 Infineon-IAUCN04S7N005-DataSheet-v01_00-EN.pdf?fileId=8ac78c8c8900bb5701890621ba151fdb
IAUCN04S7N005ATMA1
Hersteller: Infineon Technologies
Description: MOSFET_(20V 40V)
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 175A (Tj)
Rds On (Max) @ Id, Vgs: 0.55mOhm @ 88A, 10V
Power Dissipation (Max): 179W (Tc)
Vgs(th) (Max) @ Id: 3V @ 95µA
Supplier Device Package: PG-TDSON-8-43
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 7V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 127 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 8320 pF @ 20 V
Qualification: AEC-Q101
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4+6.45 EUR
10+4.19 EUR
50+3.21 EUR
100+2.9 EUR
500+2.34 EUR
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IRGP4066-EPBF IRGP4066%28-E%29PBF.pdf
IRGP4066-EPBF
Hersteller: Infineon Technologies
Description: IGBT TRENCH 600V 140A TO-247AD
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 75A
Supplier Device Package: TO-247AD
IGBT Type: Trench
Td (on/off) @ 25°C: 50ns/200ns
Switching Energy: 2.47mJ (on), 2.16mJ (off)
Test Condition: 400V, 75A, 10Ohm, 15V
Gate Charge: 150 nC
Current - Collector (Ic) (Max): 140 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 225 A
Power - Max: 454 W
Produkt ist nicht verfügbar
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IRGP4066PBF IRGP4066%28-E%29PBF.pdf
IRGP4066PBF
Hersteller: Infineon Technologies
Description: IGBT TRENCH 600V 140A TO-247AC
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 75A
Supplier Device Package: TO-247AC
IGBT Type: Trench
Td (on/off) @ 25°C: 50ns/200ns
Switching Energy: 2.47mJ (on), 2.16mJ (off)
Test Condition: 400V, 75A, 10Ohm, 15V
Gate Charge: 150 nC
Current - Collector (Ic) (Max): 140 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 225 A
Power - Max: 454 W
Produkt ist nicht verfügbar
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TC1784F320F180ELBAKXUMA1
Hersteller: Infineon Technologies
Description: RISC FLASH MICROCONTROLLER, 32 B
Packaging: Bulk
DigiKey Programmable: Not Verified
Produkt ist nicht verfügbar
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TC1793F512F270EFABKXUMA2 Infineon-TC1793-DS-v01_02-en.pdf?fileId=db3a304333227b5e013368d702f5176b
TC1793F512F270EFABKXUMA2
Hersteller: Infineon Technologies
Description: IC MCU 32BIT 4MB FLASH 416BGA
Packaging: Tape & Reel (TR)
Package / Case: 416-BGA
Mounting Type: Surface Mount
Speed: 270MHz
Program Memory Size: 4MB (4M x 8)
RAM Size: 288K x 8
Operating Temperature: -40°C ~ 125°C (TA)
Oscillator Type: External
Program Memory Type: FLASH
EEPROM Size: 192K x 8
Core Processor: TriCore™
Data Converters: A/D 8x10b, 44x12b
Core Size: 32-Bit Single-Core
Voltage - Supply (Vcc/Vdd): 1.17V ~ 3.63V
Connectivity: ASC, CANbus, EBI/EMI, FlexRay, MLI, MSC, SSC
Peripherals: DMA, POR, WDT
Supplier Device Package: PG-BGA-416
Number of I/O: 221
DigiKey Programmable: Not Verified
Produkt ist nicht verfügbar
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TC1793F512F270EFABKXUMA2 Infineon-TC1793-DS-v01_02-en.pdf?fileId=db3a304333227b5e013368d702f5176b
TC1793F512F270EFABKXUMA2
Hersteller: Infineon Technologies
Description: IC MCU 32BIT 4MB FLASH 416BGA
Packaging: Cut Tape (CT)
Package / Case: 416-BGA
Mounting Type: Surface Mount
Speed: 270MHz
Program Memory Size: 4MB (4M x 8)
RAM Size: 288K x 8
Operating Temperature: -40°C ~ 125°C (TA)
Oscillator Type: External
Program Memory Type: FLASH
EEPROM Size: 192K x 8
Core Processor: TriCore™
Data Converters: A/D 8x10b, 44x12b
Core Size: 32-Bit Single-Core
Voltage - Supply (Vcc/Vdd): 1.17V ~ 3.63V
Connectivity: ASC, CANbus, EBI/EMI, FlexRay, MLI, MSC, SSC
Peripherals: DMA, POR, WDT
Supplier Device Package: PG-BGA-416
Number of I/O: 221
DigiKey Programmable: Not Verified
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1+76.06 EUR
10+61.94 EUR
25+58.41 EUR
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TC1798F512F300EPABKXUMA2 Infineon-TC1798-DS-v01_01-en.pdf?fileId=db3a304336797ff90136ab7ac48c4d00
TC1798F512F300EPABKXUMA2
Hersteller: Infineon Technologies
Description: IC MCU 32BIT 4MB FLASH 516LFBGA
Packaging: Tape & Reel (TR)
Package / Case: 516-LFBGA
Mounting Type: Surface Mount
Speed: 300MHz
Program Memory Size: 4MB (4M x 8)
RAM Size: 288K x 8
Operating Temperature: -40°C ~ 125°C (TA)
Oscillator Type: External
Program Memory Type: FLASH
EEPROM Size: 192K x 8
Core Processor: TriCore™
Data Converters: A/D 8x10b, 64x12b
Core Size: 32-Bit
Voltage - Supply (Vcc/Vdd): 1.235V ~ 3.63V
Connectivity: ASC, CANbus, EBI/EMI, FlexRay, MLI, MSC, SSC
Peripherals: DMA, POR, WDT
Supplier Device Package: PG-LFBGA-516-5
Number of I/O: 238
DigiKey Programmable: Not Verified
Produkt ist nicht verfügbar
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TC1798F512F300EPABKXUMA2 Infineon-TC1798-DS-v01_01-en.pdf?fileId=db3a304336797ff90136ab7ac48c4d00
TC1798F512F300EPABKXUMA2
Hersteller: Infineon Technologies
Description: IC MCU 32BIT 4MB FLASH 516LFBGA
Packaging: Cut Tape (CT)
Package / Case: 516-LFBGA
Mounting Type: Surface Mount
Speed: 300MHz
Program Memory Size: 4MB (4M x 8)
RAM Size: 288K x 8
Operating Temperature: -40°C ~ 125°C (TA)
Oscillator Type: External
Program Memory Type: FLASH
EEPROM Size: 192K x 8
Core Processor: TriCore™
Data Converters: A/D 8x10b, 64x12b
Core Size: 32-Bit
Voltage - Supply (Vcc/Vdd): 1.235V ~ 3.63V
Connectivity: ASC, CANbus, EBI/EMI, FlexRay, MLI, MSC, SSC
Peripherals: DMA, POR, WDT
Supplier Device Package: PG-LFBGA-516-5
Number of I/O: 238
DigiKey Programmable: Not Verified
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1+72.91 EUR
10+59.46 EUR
25+56.11 EUR
100+52.42 EUR
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TC1793F512F270EFABKXUMA1 INFNS27999-1.pdf?t.download=true&u=5oefqw
TC1793F512F270EFABKXUMA1
Hersteller: Infineon Technologies
Description: TC1793 - RISC FLASH MICROCONTROL
Packaging: Bulk
Package / Case: 416-BGA
Mounting Type: Surface Mount
Speed: 270MHz
Program Memory Size: 4MB (4M x 8)
RAM Size: 288K x 8
Operating Temperature: -40°C ~ 125°C (TA)
Oscillator Type: External, Internal
Program Memory Type: FLASH
EEPROM Size: 192K x 8
Core Processor: TriCore™
Data Converters: A/D 48x10b
Core Size: 32-Bit
Voltage - Supply (Vcc/Vdd): 1.17V ~ 1.43V
Connectivity: ASC, CANbus, EBI/EMI, FlexRay, MLI, MSC, SSC
Peripherals: DMA, POR, WDT
Supplier Device Package: PG-BGA-416
Number of I/O: 221
DigiKey Programmable: Not Verified
Produkt ist nicht verfügbar
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TC1782F320F180HLBAKXUMA1
Hersteller: Infineon Technologies
Description: RISC FLASH MICROCONTROLLER, 32-B
Packaging: Bulk
DigiKey Programmable: Not Verified
Produkt ist nicht verfügbar
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CYB06445LQI-S3D42 Infineon-PSOC_6_MCU_CYB06445LQI-S3D42-DataSheet-v01_00-EN.pdf?fileId=8ac78c8c7ddc01d7017dfae769823afe
CYB06445LQI-S3D42
Hersteller: Infineon Technologies
Description: IC MCU 32BIT 512KB FLASH 68QFN
Packaging: Tray
Package / Case: 68-VFQFN Exposed Pad
Mounting Type: Surface Mount
Speed: 100MHz, 150MHz
Program Memory Size: 512KB (512K x 8)
RAM Size: 256K x 8
Operating Temperature: -40°C ~ 85°C (TA)
Oscillator Type: External, Internal
Program Memory Type: FLASH
Core Processor: ARM® Cortex®-M0+, ARM® Cortex®-M4F
Data Converters: A/D 16x10b SAR, 16x12b Sigma-Delta; D/A 2x7/8b
Core Size: 32-Bit Dual-Core
Voltage - Supply (Vcc/Vdd): 1.7V ~ 3.6V
Connectivity: CANbus, eMMC/SD/SDIO, FIFO, I2C, IrDA, LINbus, Microwire, QSPI, SmartCard, SPI, SSP, UART/USART, USB
Peripherals: Brown-out Detect/Reset, CapSense, Crypto - AES, DMA, LCD, LVD, PMC, POR, PWM, RSA, SHA, Temp Sensor, TRNG, WDT
Supplier Device Package: 68-QFN (8x8)
Number of I/O: 53
DigiKey Programmable: Not Verified
auf Bestellung 1850 Stücke:
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2+20.25 EUR
10+15.85 EUR
25+14.74 EUR
100+13.54 EUR
250+12.96 EUR
500+12.61 EUR
1300+12.23 EUR
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CY8C614AAZI-S2F14 Infineon-PSoC_6_MCU_CY8C61x8_CY8C61xA-DataSheet-v06_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0eea1f6b72fa
CY8C614AAZI-S2F14
Hersteller: Infineon Technologies
Description: IC MCU 32BIT 2MB FLASH 128TQFP
Packaging: Tray
Package / Case: 128-LQFP
Mounting Type: Surface Mount
Speed: 150MHz
Program Memory Size: 2MB (2M x 8)
RAM Size: 1M x 8
Operating Temperature: -40°C ~ 85°C (TA)
Oscillator Type: External, Internal
Program Memory Type: FLASH
Core Processor: ARM® Cortex®-M4F
Data Converters: A/D 16x10b SAR, 16x12b Sigma-Delta; D/A 2x7/8b
Core Size: 32-Bit
Voltage - Supply (Vcc/Vdd): 1.7V ~ 3.6V
Connectivity: eMMC/SD/SDIO, FIFO, I2C, IrDA, LINbus, Microwire, QSPI, SmartCard, SPI, SSP, UART/USART, USB
Peripherals: Brown-out Detect/Reset, CapSense, DMA, I2S, LCD, LVD, PMC, POR, PWM, Temp Sensor, WDT
Supplier Device Package: 128-TQFP (14x20)
Number of I/O: 102
DigiKey Programmable: Not Verified
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AnzahlPrivatkunde
1+26.73 EUR
10+21.02 EUR
72+18.34 EUR
144+17.71 EUR
504+16.81 EUR
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BCR 153T E6327 BCR153%20Series.pdf
BCR 153T E6327
Hersteller: Infineon Technologies
Description: TRANS PREBIAS PNP 50V 0.1A SC75
Packaging: Tape & Reel (TR)
Package / Case: SC-75, SOT-416
Mounting Type: Surface Mount
Transistor Type: PNP - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 300mV @ 1mA, 20mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 20 @ 20mA, 5V
Supplier Device Package: PG-SC75-3D
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 250 mW
Frequency - Transition: 200 MHz
Resistor - Base (R1): 2.2 kOhms
Resistor - Emitter Base (R2): 2.2 kOhms
Produkt ist nicht verfügbar
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CY25100KZXC46 Infineon-CY25100_Field_and_Factory_Programmable_Spread_Spectrum_Clock_Generator_for_EMI_Reduction-DataSheet-v14_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ec4fa073a62
Hersteller: Infineon Technologies
Description: IC CLOCK GENERATOR
Packaging: Bulk
DigiKey Programmable: Not Verified
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48+12.66 EUR
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C161PILF3VCABXUMA1 2156_c161pi_ds_199907.pdf_folderid%3Ddb3a304412b407950112b4391ae36c3b%26fileid%3Ddb3a304412b407950112b4391b6f6c3c.pdf
C161PILF3VCABXUMA1
Hersteller: Infineon Technologies
Description: SAB-C161PI - LEGACY 16-BIT MICRO
Packaging: Bulk
Package / Case: 100-LQFP
Mounting Type: Surface Mount
Speed: 20MHz
RAM Size: 3K x 8
Operating Temperature: 0°C ~ 70°C (TA)
Oscillator Type: Internal
Program Memory Type: ROMless
Core Processor: C166
Data Converters: A/D 4x10b
Core Size: 16-Bit
Voltage - Supply (Vcc/Vdd): 3V ~ 3.6V
Connectivity: EBI/EMI, I2C, SPI, UART/USART
Peripherals: POR, PWM, WDT
Supplier Device Package: PG-TQFP-100-1
Number of I/O: 76
DigiKey Programmable: Not Verified
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13+41.25 EUR
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S29GL512S10DHI010 infineon-s29gl01gs-s29gl512s-s29gl256s-s29gl128s-128-mb-256-mb-512-mb-1-gb-gl-s-mirrorbit-tm-flash-parallel-3-datasheet-en.pdf?fileId=8ac78c8c7d0d8da4017d0ed07ac14bd5&utm_source=cypress&utm_medium
S29GL512S10DHI010
Hersteller: Infineon Technologies
Description: IC FLASH 512MBIT PARALLEL 64FBGA
Packaging: Tray
Package / Case: 64-LBGA
Mounting Type: Surface Mount
Memory Size: 512Mbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 2.7V ~ 3.6V
Technology: FLASH - NOR
Memory Format: FLASH
Supplier Device Package: 64-FBGA (9x9)
Write Cycle Time - Word, Page: 60ns
Memory Interface: Parallel
Access Time: 100 ns
Memory Organization: 32M x 16
DigiKey Programmable: Not Verified
auf Bestellung 4390 Stücke:
Lieferzeit 10-14 Tag (e)
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1+26.1 EUR
10+24.23 EUR
25+23.48 EUR
50+22.91 EUR
100+22.35 EUR
260+21.59 EUR
520+21.04 EUR
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IRFR120ZPBF irfr120zpbf.pdf?fileId=5546d462533600a40153562d2f422050
IRFR120ZPBF
Hersteller: Infineon Technologies
Description: MOSFET N-CH 100V 8.7A DPAK
Packaging: Tube
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 8.7A (Tc)
Rds On (Max) @ Id, Vgs: 190mOhm @ 5.2A, 10V
Power Dissipation (Max): 35W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-252AA (DPAK)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 10 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 310 pF @ 25 V
Produkt ist nicht verfügbar
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MC68HC705C8ACPB
Hersteller: Infineon Technologies
Description: MC68HC8-BMICROCONTROLLER
Packaging: Bulk
Produkt ist nicht verfügbar
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IRL3715ZPBF IRL3715Z(S,L)PbF.pdf
IRL3715ZPBF
Hersteller: Infineon Technologies
Description: MOSFET N-CH 20V 50A TO220AB
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 50A (Tc)
Rds On (Max) @ Id, Vgs: 11mOhm @ 15A, 10V
Power Dissipation (Max): 45W (Tc)
Vgs(th) (Max) @ Id: 2.55V @ 250µA
Supplier Device Package: TO-220AB
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 11 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 870 pF @ 10 V
Produkt ist nicht verfügbar
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TLE493DW2B6MS2GOTOBO1 infineon-infineon-3dms2go-tle493d-w2b6-um-en-usermanual-en.pdf
TLE493DW2B6MS2GOTOBO1
Hersteller: Infineon Technologies
Description: 3D MAGNETIC SENSOR 2GO
Packaging: Bulk
Interface: I2C, Serial
Contents: Board(s)
Voltage - Supply: 2.8V ~ 3.5V
Sensor Type: Magnetic, Linear, Rotary Position
Utilized IC / Part: TLE493D-W2B6
Supplied Contents: Board(s)
Sensing Range: ±160mT ~ ±230mT
Produkt ist nicht verfügbar
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IR2113PBF description IR2113SPBF.pdf
IR2113PBF
Hersteller: Infineon Technologies
Description: IC GATE DRVR HALF-BRIDGE 14DIP
Packaging: Tube
Package / Case: 14-DIP (0.300", 7.62mm)
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 150°C (TJ)
Voltage - Supply: 3.3V ~ 20V
Input Type: Non-Inverting
High Side Voltage - Max (Bootstrap): 600 V
Supplier Device Package: 14-DIP
Rise / Fall Time (Typ): 25ns, 17ns
Channel Type: Independent
Driven Configuration: Half-Bridge
Number of Drivers: 2
Gate Type: IGBT, MOSFET (N-Channel)
Logic Voltage - VIL, VIH: 6V, 9.5V
Current - Peak Output (Source, Sink): 2A, 2A
DigiKey Programmable: Not Verified
auf Bestellung 2494 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
3+7.54 EUR
10+5.71 EUR
25+5.25 EUR
100+4.75 EUR
250+4.5 EUR
500+4.36 EUR
1000+4.24 EUR
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IRF7314PBF description irf7314pbf.pdf?fileId=5546d462533600a4015355f57b901b2c
IRF7314PBF
Hersteller: Infineon Technologies
Description: MOSFET 2P-CH 20V 5.3A 8SO
Packaging: Tube
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Configuration: 2 P-Channel (Dual)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 2W
Drain to Source Voltage (Vdss): 20V
Current - Continuous Drain (Id) @ 25°C: 5.3A
Input Capacitance (Ciss) (Max) @ Vds: 780pF @ 15V
Rds On (Max) @ Id, Vgs: 58mOhm @ 2.9A, 4.5V
Gate Charge (Qg) (Max) @ Vgs: 29nC @ 4.5V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 700mV @ 250µA
Supplier Device Package: 8-SO
Produkt ist nicht verfügbar
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CY8C20110-LDX2I download
CY8C20110-LDX2I
Hersteller: Infineon Technologies
Description: IC CAPSENSE EXP 10 I/O 16QFN
DigiKey Programmable: Not Verified
LED Driver Channels: Up to 10
Proximity Detection: No
Supplier Device Package: 16-QFN (3x3)
Number of Inputs: Up to 10
Current - Supply: 1.5mA
Voltage - Supply: 2.4V ~ 5.25V
Operating Temperature: -40°C ~ 85°C
Type: Buttons
Interface: I²C
Mounting Type: Surface Mount
Package / Case: 16-UFQFN
Packaging: Tray
Produkt ist nicht verfügbar
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IPP023N10N5XKSA1 Infineon-IPP023N10N5-DS-v02_03-EN.pdf?fileId=5546d461454603990145d5a675f86494
IPP023N10N5XKSA1
Hersteller: Infineon Technologies
Description: TRENCH >=100V
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 120A (Tc)
Rds On (Max) @ Id, Vgs: 2.3mOhm @ 100A, 10V
Power Dissipation (Max): 375W (Tc)
Vgs(th) (Max) @ Id: 3.8V @ 270µA
Supplier Device Package: PG-TO220-3-1
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 210 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 15600 pF @ 50 V
auf Bestellung 724 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
2+12.67 EUR
50+6.74 EUR
100+6.16 EUR
500+5.16 EUR
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S29GL128P90TFCR20 128_Mbit_3_V_Page_Flash_with_90_nm_MirrorBit_Process_Technology-DataSheet-v03_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ed7850458a5&utm_source=cypress&utm_medium=ref
S29GL128P90TFCR20
Hersteller: Infineon Technologies
Description: IC FLASH 128MBIT PARALLEL 56TSOP
Packaging: Tray
Package / Case: 56-TFSOP (0.724", 18.40mm Width)
Mounting Type: Surface Mount
Memory Size: 128Mbit
Memory Type: Non-Volatile
Operating Temperature: 0°C ~ 85°C (TA)
Voltage - Supply: 3V ~ 3.6V
Technology: FLASH - NOR
Memory Format: FLASH
Supplier Device Package: 56-TSOP
Write Cycle Time - Word, Page: 90ns
Memory Interface: Parallel
Access Time: 90 ns
Memory Organization: 16M x 8
DigiKey Programmable: Verified
auf Bestellung 204 Stücke:
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AnzahlPrivatkunde
2+12.76 EUR
10+11.33 EUR
25+10.81 EUR
40+10.54 EUR
80+10.17 EUR
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S29GL128P90TFCR10 128_Mbit_3_V_Page_Flash_with_90_nm_MirrorBit_Process_Technology-DataSheet-v03_00-EN.pdf?fileId=8ac78c8c7d0d8da4017d0ed7850458a5&utm_source=cypress&utm_medium=ref
S29GL128P90TFCR10
Hersteller: Infineon Technologies
Description: IC FLASH 128MBIT PARALLEL 56TSOP
Packaging: Tray
Package / Case: 56-TFSOP (0.724", 18.40mm Width)
Mounting Type: Surface Mount
Memory Size: 128Mbit
Memory Type: Non-Volatile
Operating Temperature: 0°C ~ 85°C (TA)
Voltage - Supply: 3V ~ 3.6V
Technology: FLASH - NOR
Memory Format: FLASH
Supplier Device Package: 56-TSOP
Write Cycle Time - Word, Page: 90ns
Memory Interface: Parallel
Access Time: 90 ns
Memory Organization: 16M x 8
DigiKey Programmable: Verified
auf Bestellung 182 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
2+13.39 EUR
10+12.22 EUR
25+12 EUR
40+11.91 EUR
91+10.69 EUR
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IRF7820PBF irf7820pbf.pdf?fileId=5546d462533600a401535608c10e1d00
IRF7820PBF
Hersteller: Infineon Technologies
Description: MOSFET N CH 200V 3.7A 8-SO
Input Capacitance (Ciss) (Max) @ Vds: 1750 pF @ 100 V
Gate Charge (Qg) (Max) @ Vgs: 44 nC @ 10 V
Drain to Source Voltage (Vdss): 200 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Supplier Device Package: 8-SO
Vgs(th) (Max) @ Id: 5V @ 100µA
Power Dissipation (Max): 2.5W (Ta)
Rds On (Max) @ Id, Vgs: 78mOhm @ 2.2A, 10V
Current - Continuous Drain (Id) @ 25°C: 3.7A (Ta)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Packaging: Tube
Produkt ist nicht verfügbar
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IRFSL7534PBF irfs7534pbf.pdf?fileId=5546d462533600a4015364c3e2c629c7
IRFSL7534PBF
Hersteller: Infineon Technologies
Description: MOSFET N-CH 60V 195A TO262
Input Capacitance (Ciss) (Max) @ Vds: 10034 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 279 nC @ 10 V
Drain to Source Voltage (Vdss): 60 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Supplier Device Package: TO-262
Vgs(th) (Max) @ Id: 3.7V @ 250µA
Power Dissipation (Max): 294W (Tc)
Rds On (Max) @ Id, Vgs: 2.4mOhm @ 100A, 10V
Current - Continuous Drain (Id) @ 25°C: 195A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-262-3 Long Leads, I2PAK, TO-262AA
Packaging: Tube
Produkt ist nicht verfügbar
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IRF7473PBF irf7473pbf.pdf?fileId=5546d462533600a4015355ff504c1c20
IRF7473PBF
Hersteller: Infineon Technologies
Description: MOSFET N-CH 100V 6.9A 8SO
Packaging: Tube
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 6.9A (Ta)
Rds On (Max) @ Id, Vgs: 26mOhm @ 4.1A, 10V
Power Dissipation (Max): 2.5W (Ta)
Vgs(th) (Max) @ Id: 5.5V @ 250µA
Supplier Device Package: 8-SO
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 61 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3180 pF @ 25 V
Produkt ist nicht verfügbar
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IRF8714TRPBFXTMA1
Hersteller: Infineon Technologies
Description: TRENCH <= 40V
Packaging: Tape & Reel (TR)
auf Bestellung 4000 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
4000+0.36 EUR
Mindestbestellmenge: 4000 Stücke
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IPF011N08NM6ATMA1 infineon-ipf011n08nm6-datasheet-en.pdf
IPF011N08NM6ATMA1
Hersteller: Infineon Technologies
Description: TRENCH 40<-<100V
Packaging: Tape & Reel (TR)
Package / Case: TO-263-7, D2PAK (6 Leads + Tab)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 40A (Ta), 271A (Tc)
Rds On (Max) @ Id, Vgs: 1.1mOhm @ 100A, 10V
Power Dissipation (Max): 3.8W (Ta), 375W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 279µA
Supplier Device Package: PG-TO263-7-3
Drive Voltage (Max Rds On, Min Rds On): 8V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 80 V
Gate Charge (Qg) (Max) @ Vgs: 181 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 13000 pF @ 40 V
Produkt ist nicht verfügbar
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AUIRF3710ZSTRL Infineon-auirf3710z-DataSheet-v01_01-EN.pdf?fileId=5546d4626c1f3dc3016c4d844dab18b7
AUIRF3710ZSTRL
Hersteller: Infineon Technologies
Description: MOSFET N-CH 100V 59A D2PAK
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 59A (Tc)
Rds On (Max) @ Id, Vgs: 18mOhm @ 35A, 10V
Power Dissipation (Max): 160W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: PG-TO263-3
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 120 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2900 pF @ 25 V
Qualification: AEC-Q101
auf Bestellung 800 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
800+3.58 EUR
Mindestbestellmenge: 800 Stücke
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IRPS5401MXI03TRP Infineon-Digital_voltage_regulator_PMIC_IRPS5401-PB-v01_01-EN.pdf?fileId=5546d46258fc0bc10159957c0dbf2313
Hersteller: Infineon Technologies
Description: IC REG
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar
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IRPS5401MXI04TRPAUMA1 Infineon-IRPS5401M-DS-v02_01-EN.pdf?fileId=5546d4625cc9456a015cd69d402139db
IRPS5401MXI04TRPAUMA1
Hersteller: Infineon Technologies
Description: IC REG ADJ 50A 5OUT 56QFN
Packaging: Tape & Reel (TR)
Package / Case: 56-PowerVFQFN
Output Type: Adjustable
Mounting Type: Surface Mount
Number of Outputs: 5
Current - Output: 50A
Operating Temperature: -40°C ~ 85°C (TA)
Output Configuration: Negative
Frequency - Switching: 200kHz ~ 1MHz
Voltage - Input (Max): 12V
Supplier Device Package: 56-QFN (7x7)
Synchronous Rectifier: Yes
Voltage - Output (Max): 3.6V
Voltage - Input (Min): 5.5V
Voltage - Output (Min/Fixed): 0.5V
Produkt ist nicht verfügbar
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BGMC1210E6327XUMA1 Infineon-BGMC1210-DataSheet-v01_05-EN.pdf?fileId=8ac78c8c8a44f57b018a45a2c3530295
BGMC1210E6327XUMA1
Hersteller: Infineon Technologies
Description: WIRELESS INFRASTRUCTURE
Packaging: Tape & Reel (TR)
Package / Case: 32-VFQFN Exposed Pad
Mounting Type: Surface Mount
RF Type: Cellular
Voltage - Supply: 3.1V ~ 5.5V
Current - Supply: 4.2mA
Supplier Device Package: PG-VQFN-32-24
Produkt ist nicht verfügbar
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S2GOMEMSMICIM69DTOBO1 Infineon-IM69D130_Microphone_Shield2Go-GS-v01_00-EN.pdf?fileId=5546d462677d0f4601677f3486ed0941
S2GOMEMSMICIM69DTOBO1
Hersteller: Infineon Technologies
Description: BOARD
Packaging: Bulk
Function: Microphone
Type: Audio
Contents: Board(s)
Utilized IC / Part: IM69D130
Platform: Shield2Go
Produkt ist nicht verfügbar
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IRF7389PBF description irf7389pbf.pdf?fileId=5546d462533600a4015355f9f3441b90
IRF7389PBF
Hersteller: Infineon Technologies
Description: MOSFET N/P-CH 30V 8SO
Packaging: Tube
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Configuration: N and P-Channel
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 2.5W
Drain to Source Voltage (Vdss): 30V
Input Capacitance (Ciss) (Max) @ Vds: 650pF @ 25V
Rds On (Max) @ Id, Vgs: 29mOhm @ 5.8A, 10V
Gate Charge (Qg) (Max) @ Vgs: 33nC @ 10V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 1V @ 250µA
Supplier Device Package: 8-SO
Produkt ist nicht verfügbar
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TLE4984CHTE6747HAMA1 TLE4984C_PB.pdf?fileId=db3a304335c2937a0135ce52edfb6c0e
TLE4984CHTE6747HAMA1
Hersteller: Infineon Technologies
Description: MAG SWITCH SPEED SENSOR 3SSO
Features: Temperature Compensated
Packaging: Cut Tape (CT)
Package / Case: 3-SSIP Module
Output Type: Open Collector
Polarization: South Pole
Mounting Type: Through Hole
Function: Unipolar Switch
Operating Temperature: -40°C ~ 150°C
Voltage - Supply: 2.7V ~ 18V
Technology: Hall Effect
Sensing Range: 13.9mT Trip, 5mT Release
Current - Output (Max): 20mA
Current - Supply (Max): 6mA
Supplier Device Package: PG-SSO-3-91
Test Condition: 25°C
auf Bestellung 1506 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
3+7.27 EUR
5+6.51 EUR
10+6.22 EUR
25+5.88 EUR
50+5.65 EUR
100+5.44 EUR
500+5.02 EUR
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TLE4984CHTE6747HAMA1 TLE4984C_PB.pdf?fileId=db3a304335c2937a0135ce52edfb6c0e
TLE4984CHTE6747HAMA1
Hersteller: Infineon Technologies
Description: MAG SWITCH SPEED SENSOR 3SSO
Features: Temperature Compensated
Packaging: Tape & Box (TB)
Package / Case: 3-SSIP Module
Output Type: Open Collector
Polarization: South Pole
Mounting Type: Through Hole
Function: Unipolar Switch
Operating Temperature: -40°C ~ 150°C
Voltage - Supply: 2.7V ~ 18V
Technology: Hall Effect
Sensing Range: 13.9mT Trip, 5mT Release
Current - Output (Max): 20mA
Current - Supply (Max): 6mA
Supplier Device Package: PG-SSO-3-91
Test Condition: 25°C
Produkt ist nicht verfügbar
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TLE4983CHTE6747HAMA1 TLE498320080527TLE4983CHTE6747supplementV10.pdf
TLE4983CHTE6747HAMA1
Hersteller: Infineon Technologies
Description: MAG SWITCH SPEED SENSOR 3SSO
Features: Programmable
Packaging: Cut Tape (CT)
Package / Case: 3-SSIP Module
Polarization: North Pole
Mounting Type: Through Hole
Function: Programmable
Operating Temperature: -40°C ~ 150°C
Technology: Hall Effect
Current - Supply (Max): 8mA
Supplier Device Package: PG-SSO-3-91
Produkt ist nicht verfügbar
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TLE4983CHTE6747HAMA1 TLE498320080527TLE4983CHTE6747supplementV10.pdf
TLE4983CHTE6747HAMA1
Hersteller: Infineon Technologies
Description: MAG SWITCH SPEED SENSOR 3SSO
Features: Programmable
Packaging: Tape & Box (TB)
Package / Case: 3-SSIP Module
Polarization: North Pole
Mounting Type: Through Hole
Function: Programmable
Operating Temperature: -40°C ~ 150°C
Technology: Hall Effect
Current - Supply (Max): 8mA
Supplier Device Package: PG-SSO-3-91
auf Bestellung 1500 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
1500+6.16 EUR
Mindestbestellmenge: 1500 Stücke
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TLE49421CHAMA2 Infineon-TLE4942-1C-DS-v04_00-EN.pdf?fileId=5546d4625607bd13015654bf69b908cb
TLE49421CHAMA2
Hersteller: Infineon Technologies
Description: MAGNETIC SWITCH SPECIAL PURPOSE
Packaging: Cut Tape (CT)
Package / Case: 2-SIP, SSO-2-2
Output Type: Current Source
Polarization: North Pole, South Pole
Mounting Type: Through Hole
Function: Special Purpose
Operating Temperature: -40°C ~ 150°C (TJ)
Voltage - Supply: 4.5V ~ 20V
Technology: Hall Effect
Current - Supply (Max): 16.8mA
Supplier Device Package: PG-SSO-2-2
Produkt ist nicht verfügbar
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TLE49421CHAMA2 Infineon-TLE4942-1C-DS-v04_00-EN.pdf?fileId=5546d4625607bd13015654bf69b908cb
TLE49421CHAMA2
Hersteller: Infineon Technologies
Description: MAGNETIC SWITCH SPECIAL PURPOSE
Supplier Device Package: PG-SSO-2-2
Current - Supply (Max): 16.8mA
Technology: Hall Effect
Voltage - Supply: 4.5V ~ 20V
Operating Temperature: -40°C ~ 150°C (TJ)
Function: Special Purpose
Mounting Type: Through Hole
Polarization: North Pole, South Pole
Output Type: Current Source
Package / Case: 2-SIP, SSO-2-2
Packaging: Tape & Box (TB)
Produkt ist nicht verfügbar
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TLE4953CE0184HAMA1
Hersteller: Infineon Technologies
Description: SPEED & CURRENT SENSORS PG-SSO-2
Sensing Range: ±120mT
Technology: Hall Effect
Voltage - Supply: 4.5V ~ 20V
Operating Temperature: -40°C ~ 150°C (TJ)
Function: Special Purpose
Mounting Type: Through Hole
Polarization: North Pole, South Pole
Output Type: Current Source, PWM
Package / Case: 2-SIP, SSO-2-2
Packaging: Tape & Box (TB)
Test Condition: 25°C
Supplier Device Package: PG-SSO-2-4
Current - Supply (Max): 16.8mA
Produkt ist nicht verfügbar
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TLE4929CX2AM38NHAMA1 Infineon-TLE4929C_59-EEPROM_Programming_Guide-ApplicationNotes-v01_02-EN.pdf?fileId=5546d462636cc8fb01636f880b304ea9
TLE4929CX2AM38NHAMA1
Hersteller: Infineon Technologies
Description: SPEED & CURRENT SENSORS PG-SSO-3
Sensing Range: ±120mT
Resolution: 16 b
Technology: Hall Effect
Voltage - Supply: 4V ~ 16V
Operating Temperature: -40°C ~ 175°C (TJ)
Axis: Single
Mounting Type: Through Hole
Output Type: Open Drain
Package / Case: 3-SIP Module
Features: Programmable, Temperature Compensated
Packaging: Tape & Box (TB)
Supplier Device Package: PG-SSO-3-52
Current - Supply (Max): 13.4mA
Current - Output (Max): 15mA
auf Bestellung 1500 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
1500+3.74 EUR
Mindestbestellmenge: 1500 Stücke
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TLE4983CHTNE6847HAMA1 fundamentals-of-power-semiconductors
Hersteller: Infineon Technologies
Description: MAG SWITCH SPEED SENSOR 3SSO
Qualification: AEC-Q100
Grade: Automotive
Packaging: Bulk
auf Bestellung 13500 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
104+5.82 EUR
Mindestbestellmenge: 104 Stücke
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TLE4924C2E6547HAMA1 TLE4924C_pb.pdf?fileId=db3a304332ae7b090132af75a28d013c
TLE4924C2E6547HAMA1
Hersteller: Infineon Technologies
Description: MAGNETIC SWITCH SSO-3-92
Supplier Device Package: PG-SSO-3-92
Mounting Type: Through Hole
Package / Case: 3-SSIP Module
Packaging: Tape & Box (TB)
Produkt ist nicht verfügbar
Mindestbestellmenge: 1500 Stücke
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TLE4998S3CHAMA1 TLE4998S3C_Data_Sheet_Rev1.0.pdf?folderId=db3a30431ce5fb52011d3dd6e8012582&fileId=db3a30431ce5fb52011d3ecb064425c2
TLE4998S3CHAMA1
Hersteller: Infineon Technologies
Description: SENSOR HALL EFFECT SENT SM8
Qualification: AEC-Q100
Grade: Automotive
Supplier Device Package: SM8
Current - Supply (Max): 8mA
Current - Output (Max): 5mA
Sensing Range: ±50mT, ±100mT, ±200mT
Resolution: 16 b
Technology: Hall Effect
Bandwidth: Programmable
Voltage - Supply: 4.5V ~ 5.5V
Operating Temperature: -40°C ~ 125°C (TJ)
Axis: Single
Mounting Type: Surface Mount
Output Type: SENT
Package / Case: SOT-223-8
Features: Selectable Scale, Temperature Compensated
Packaging: Tape & Box (TB)
Produkt ist nicht verfügbar
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CYAT837AZA77-42002 Infineon-CYAT837AZA98-42002-DataSheet-v01_00-EN.pdf?fileId=8ac78c8c82ce566401837ef647900bf5
Hersteller: Infineon Technologies
Description: PSOC BASED - TRUETOUCH
Packaging: Tray
Package / Case: 128-LQFP
Mounting Type: Surface Mount
Interface: I²C
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 1.71V ~ 1.95V, 3V ~ 5.5V
Supplier Device Package: 128-TQFP (14x20)
Touchscreen: 2 Wire Capacitive
Produkt ist nicht verfügbar
Mindestbestellmenge: 720 Stücke
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CYAT837AZA88-42002 Infineon-CYAT837AZA98-42002-DataSheet-v01_00-EN.pdf?fileId=8ac78c8c82ce566401837ef647900bf5
Hersteller: Infineon Technologies
Description: PSOC BASED - TRUETOUCH
Packaging: Tray
Package / Case: 128-LQFP
Mounting Type: Surface Mount
Interface: I²C
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 1.71V ~ 1.95V, 3V ~ 5.5V
Supplier Device Package: 128-TQFP (14x20)
Touchscreen: 2 Wire Capacitive
Produkt ist nicht verfügbar
Mindestbestellmenge: 720 Stücke
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CYAT837AZA98-42002 Infineon-CYAT837AZA98-42002-DataSheet-v01_00-EN.pdf?fileId=8ac78c8c82ce566401837ef647900bf5
Hersteller: Infineon Technologies
Description: PSOC BASED - TRUETOUCH
Packaging: Tray
Package / Case: 128-LQFP
Mounting Type: Surface Mount
Interface: I²C
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 1.71V ~ 1.95V, 3V ~ 5.5V
Supplier Device Package: 128-TQFP (14x20)
Touchscreen: 2 Wire Capacitive
Produkt ist nicht verfügbar
Mindestbestellmenge: 720 Stücke
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CYAT837AZS77-42002 Infineon-CYAT837AZA98-42002-DataSheet-v01_00-EN.pdf?fileId=8ac78c8c82ce566401837ef647900bf5
CYAT837AZS77-42002
Hersteller: Infineon Technologies
Description: PSOC BASED - TRUETOUCH
Packaging: Tray
Package / Case: 128-LQFP
Mounting Type: Surface Mount
Interface: I2C
Operating Temperature: -40°C ~ 105°C (TA)
Voltage - Supply: 1.71V ~ 1.95V, 3V ~ 5.5V
Supplier Device Package: 128-TQFP (14x20)
Touchscreen: 2 Wire Capacitive
Grade: Automotive
Qualification: AEC-Q100
Produkt ist nicht verfügbar
Mindestbestellmenge: 720 Stücke
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CYAT837AZS88-42002 Infineon-CYAT837AZA98-42002-DataSheet-v01_00-EN.pdf?fileId=8ac78c8c82ce566401837ef647900bf5
CYAT837AZS88-42002
Hersteller: Infineon Technologies
Description: PSOC BASED - TRUETOUCH
Packaging: Tray
Package / Case: 128-LQFP
Mounting Type: Surface Mount
Interface: I2C
Operating Temperature: -40°C ~ 105°C (TA)
Voltage - Supply: 1.71V ~ 1.95V, 3V ~ 5.5V
Supplier Device Package: 128-TQFP (14x20)
Touchscreen: 2 Wire Capacitive
Grade: Automotive
Qualification: AEC-Q100
Produkt ist nicht verfügbar
Mindestbestellmenge: 720 Stücke
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S99-50577
Hersteller: Infineon Technologies
Description: INFINEON
Mounting Type: Surface Mount
Package / Case: 16-SOIC (0.295", 7.50mm Width)
Packaging: Bulk
Memory Interface: SPI - Quad I/O
Write Cycle Time - Word, Page: 750µs
Supplier Device Package: 16-SOIC
Memory Format: FLASH
Clock Frequency: 133 MHz
Technology: FLASH - NOR (SLC)
Voltage - Supply: 2.7V ~ 3.6V
Operating Temperature: -40°C ~ 85°C (TA)
Memory Type: Non-Volatile
Memory Size: 512Mbit
Memory Organization: 64M x 8
Access Time: 6.5 ns
Produkt ist nicht verfügbar
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IRFR24N15DPBF description irfr24n15dpbf.pdf?fileId=5546d462533600a40153562dc1162081
IRFR24N15DPBF
Hersteller: Infineon Technologies
Description: MOSFET N-CH 150V 24A DPAK
Packaging: Tube
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 24A (Tc)
Rds On (Max) @ Id, Vgs: 95mOhm @ 14A, 10V
Power Dissipation (Max): 140W (Tc)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: TO-252AA (DPAK)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 150 V
Gate Charge (Qg) (Max) @ Vgs: 45 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 890 pF @ 25 V
Produkt ist nicht verfügbar
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SAK-TC1367A264F150EFAAKXUMA1
Hersteller: Infineon Technologies
Description: RISC FLASH MICROCONTROLLER, 32-B
Packaging: Bulk
DigiKey Programmable: Not Verified
auf Bestellung 900 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
30+18.87 EUR
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IPP039N10N5XKSA1 infineon-ipp039n10n5-ds-en.pdf?fileId=5546d4625b3ca4ec015b626e5b4367fa
IPP039N10N5XKSA1
Hersteller: Infineon Technologies
Description: MV POWER MOS
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 100A (Tc)
Rds On (Max) @ Id, Vgs: 3.9mOhm @ 50A, 10V
Power Dissipation (Max): 188W (Tc)
Vgs(th) (Max) @ Id: 3.8V @ 125µA
Supplier Device Package: PG-TO220-3
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 95 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 7000 pF @ 50 V
Produkt ist nicht verfügbar
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SHIELDBTS500151TADTOBO1 Infineon-Protected_Switch_Shield_with_BTS50015-1TAD_for_Arduino-GS-v01_00-EN.pdf?fileId=5546d462580663ef01583e4e1c0d1844
SHIELDBTS500151TADTOBO1
Hersteller: Infineon Technologies
Description: EVAL 12V PROTECT SWITCH SHIELD
Packaging: Bulk
Function: Switch
Type: Power Management
Contents: Board(s)
Utilized IC / Part: BTS50015-1TAD
auf Bestellung 2 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
1+167.05 EUR
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