Produkte > INFINEON TECHNOLOGIES > Alle Produkte des Herstellers INFINEON TECHNOLOGIES (149795) > Seite 645 nach 2497
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TLE49411CHAMA2 | Infineon Technologies |
Description: MAGNETIC SWITCH SPEED SENSORPackaging: Tape & Box (TB) Package / Case: 2-SIP, SSO-2-53 Output Type: Current Source Polarization: North Pole, South Pole Mounting Type: Through Hole Function: Special Purpose Operating Temperature: -40°C ~ 150°C Voltage - Supply: 4.5V ~ 20V Technology: Hall Effect Current - Supply (Max): 16.8mA Supplier Device Package: PG-SSO-2-53 Grade: Automotive Qualification: AEC-Q100 |
auf Bestellung 1500 Stücke: Lieferzeit 10-14 Tag (e) |
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TLE4929CXVAM38NAHAMA1 | Infineon Technologies |
Description: SPEED SENSORSFeatures: Programmable, Temperature Compensated Packaging: Cut Tape (CT) Package / Case: 3-SIP Module Output Type: Open Drain Mounting Type: Through Hole Axis: Single Operating Temperature: -40°C ~ 175°C (TJ) Voltage - Supply: 4V ~ 16V Technology: Hall Effect Resolution: 16 b Sensing Range: ±120mT Current - Output (Max): 15mA Current - Supply (Max): 13.4mA Supplier Device Package: PG-SSO-3-52 Grade: Automotive Qualification: AEC-Q100 |
Produkt ist nicht verfügbar |
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DD98N20KHPSA1 | Infineon Technologies |
Description: DIODE MODULE GP 2000V 98APackaging: Bulk Package / Case: Module Mounting Type: Chassis Mount Speed: Standard Recovery >500ns, > 200mA (Io) Technology: Standard Diode Configuration: 1 Pair Series Connection Current - Average Rectified (Io) (per Diode): 98A Supplier Device Package: Module Operating Temperature - Junction: -40°C ~ 150°C Voltage - DC Reverse (Vr) (Max): 2000 V Voltage - Forward (Vf) (Max) @ If: 1.53 V @ 300 A Current - Reverse Leakage @ Vr: 25 mA @ 2000 V |
Produkt ist nicht verfügbar |
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AUIRL7732S2TR | Infineon Technologies |
Description: MOSFET N-CH 40V 14A DIRECTFET SCPackaging: Tape & Reel (TR) Package / Case: DirectFET™ Isometric SC Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 14A (Ta) Rds On (Max) @ Id, Vgs: 6.6mOhm @ 35A, 10V Power Dissipation (Max): 2.2W (Ta), 41W (Tc) Vgs(th) (Max) @ Id: 2.5V @ 50µA Supplier Device Package: DIRECTFET™ SC Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±16V Drain to Source Voltage (Vdss): 40 V Gate Charge (Qg) (Max) @ Vgs: 33 nC @ 4.5 V Input Capacitance (Ciss) (Max) @ Vds: 2020 pF @ 25 V |
auf Bestellung 4800 Stücke: Lieferzeit 10-14 Tag (e) |
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AUIRL7732S2TR | Infineon Technologies |
Description: MOSFET N-CH 40V 14A DIRECTFET SCPackaging: Cut Tape (CT) Package / Case: DirectFET™ Isometric SC Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 14A (Ta) Rds On (Max) @ Id, Vgs: 6.6mOhm @ 35A, 10V Power Dissipation (Max): 2.2W (Ta), 41W (Tc) Vgs(th) (Max) @ Id: 2.5V @ 50µA Supplier Device Package: DIRECTFET™ SC Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±16V Drain to Source Voltage (Vdss): 40 V Gate Charge (Qg) (Max) @ Vgs: 33 nC @ 4.5 V Input Capacitance (Ciss) (Max) @ Vds: 2020 pF @ 25 V |
auf Bestellung 4800 Stücke: Lieferzeit 10-14 Tag (e) |
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TC277TP64F200SDCKXUMA1 | Infineon Technologies |
Description: IC MCU 32BIT 4MB FLASH 292LFBGAPackaging: Tape & Reel (TR) Package / Case: 292-LFBGA Mounting Type: Surface Mount Speed: 200MHz Program Memory Size: 4MB (4M x 8) RAM Size: 472K x 8 Operating Temperature: -40°C ~ 125°C (TA) Oscillator Type: External Program Memory Type: FLASH EEPROM Size: 64K x 8 Core Processor: TriCore™ Data Converters: A/D 60x12b, 6 x Sigma-Delta Core Size: 32-Bit Tri-Core Voltage - Supply (Vcc/Vdd): 3V ~ 5.5V Connectivity: ASC, CANbus, Ethernet, FlexRay, HSSL, I2C, LINbus, MSC, PSI5, QSPI, SENT Peripherals: DMA, WDT Supplier Device Package: PG-LFBGA-292-6 Number of I/O: 169 DigiKey Programmable: Not Verified |
Produkt ist nicht verfügbar |
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TC277TP64F200SDCKXUMA1 | Infineon Technologies |
Description: IC MCU 32BIT 4MB FLASH 292LFBGAPackaging: Cut Tape (CT) Package / Case: 292-LFBGA Mounting Type: Surface Mount Speed: 200MHz Program Memory Size: 4MB (4M x 8) RAM Size: 472K x 8 Operating Temperature: -40°C ~ 125°C (TA) Oscillator Type: External Program Memory Type: FLASH EEPROM Size: 64K x 8 Core Processor: TriCore™ Data Converters: A/D 60x12b, 6 x Sigma-Delta Core Size: 32-Bit Tri-Core Voltage - Supply (Vcc/Vdd): 3V ~ 5.5V Connectivity: ASC, CANbus, Ethernet, FlexRay, HSSL, I2C, LINbus, MSC, PSI5, QSPI, SENT Peripherals: DMA, WDT Supplier Device Package: PG-LFBGA-292-6 Number of I/O: 169 DigiKey Programmable: Not Verified |
auf Bestellung 995 Stücke: Lieferzeit 10-14 Tag (e) |
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| MC33771ATP1AE551 | Infineon Technologies |
Description: MC337LI-IBATTECECONTROLLER Packaging: Tray |
Produkt ist nicht verfügbar |
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BC847CWH6433XTMA1 | Infineon Technologies |
Description: TRANS NPN 45V 0.1A PG-SOT323Packaging: Tape & Reel (TR) Package / Case: SC-70, SOT-323 Mounting Type: Surface Mount Transistor Type: NPN Operating Temperature: 150°C (TJ) Vce Saturation (Max) @ Ib, Ic: 600mV @ 5mA, 100mA Current - Collector Cutoff (Max): 15nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 420 @ 2mA, 5V Frequency - Transition: 250MHz Supplier Device Package: PG-SOT323 Current - Collector (Ic) (Max): 100 mA Voltage - Collector Emitter Breakdown (Max): 45 V Power - Max: 250 mW |
Produkt ist nicht verfügbar |
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BC 847CW B6327 | Infineon Technologies |
Description: TRANS NPN 45V 0.1A SOT323Packaging: Tape & Reel (TR) Package / Case: SC-70, SOT-323 Mounting Type: Surface Mount Transistor Type: NPN Operating Temperature: 150°C (TJ) Vce Saturation (Max) @ Ib, Ic: 600mV @ 5mA, 100mA Current - Collector Cutoff (Max): 15nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 420 @ 2mA, 5V Frequency - Transition: 250MHz Supplier Device Package: PG-SOT323 Current - Collector (Ic) (Max): 100 mA Voltage - Collector Emitter Breakdown (Max): 45 V Power - Max: 250 mW |
Produkt ist nicht verfügbar |
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IRS2110PBF | Infineon Technologies |
Description: IC GATE DRVR HALF-BRIDGE 14DIPPackaging: Tube Package / Case: 14-DIP (0.300", 7.62mm) Mounting Type: Through Hole Operating Temperature: -40°C ~ 150°C (TJ) Voltage - Supply: 10V ~ 20V Input Type: Non-Inverting High Side Voltage - Max (Bootstrap): 500 V Supplier Device Package: 14-DIP Rise / Fall Time (Typ): 25ns, 17ns Channel Type: Independent Driven Configuration: Half-Bridge Number of Drivers: 2 Gate Type: IGBT, MOSFET (N-Channel) Logic Voltage - VIL, VIH: 6V, 9.5V Current - Peak Output (Source, Sink): 2.5A, 2.5A DigiKey Programmable: Not Verified |
auf Bestellung 1489 Stücke: Lieferzeit 10-14 Tag (e) |
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CY8C21334-24PVXI | Infineon Technologies |
Description: IC MCU 8BIT 8KB FLASH 20SSOPPackaging: Bulk Package / Case: 20-SSOP (0.209", 5.30mm Width) Mounting Type: Surface Mount Speed: 24MHz Program Memory Size: 8KB (8K x 8) RAM Size: 512 x 8 Operating Temperature: -40°C ~ 85°C (TA) Oscillator Type: Internal Program Memory Type: FLASH Core Processor: M8C Data Converters: A/D 28x8b Core Size: 8-Bit Voltage - Supply (Vcc/Vdd): 2.4V ~ 5.25V Connectivity: I2C, SPI, UART/USART Peripherals: POR, PWM, WDT Supplier Device Package: 20-SSOP Number of I/O: 16 DigiKey Programmable: Verified |
auf Bestellung 415 Stücke: Lieferzeit 10-14 Tag (e) |
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IRGS14C40LPBF | Infineon Technologies |
Description: IGBT 430V 20A D2PAKPackaging: Tube Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Mounting Type: Surface Mount Operating Temperature: -40°C ~ 175°C (TJ) Input Type: Logic Vce(on) (Max) @ Vge, Ic: 1.75V @ 5V, 14A Supplier Device Package: D2PAK Td (on/off) @ 25°C: 900ns/6µs Gate Charge: 27 nC Current - Collector (Ic) (Max): 20 A Voltage - Collector Emitter Breakdown (Max): 430 V Power - Max: 125 W |
Produkt ist nicht verfügbar |
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CY8C24423A-24LTXIT | Infineon Technologies |
Description: IC MCU 8BIT 4KB FLASH 32QFNPackaging: Tape & Reel (TR) Package / Case: 32-UFQFN Exposed Pad Mounting Type: Surface Mount Speed: 24MHz Program Memory Size: 4KB (4K x 8) RAM Size: 256 x 8 Operating Temperature: -40°C ~ 85°C (TA) Oscillator Type: Internal Program Memory Type: FLASH Core Processor: M8C Data Converters: A/D 10x14b; D/A 2x9b Core Size: 8-Bit Voltage - Supply (Vcc/Vdd): 2.4V ~ 5.25V Connectivity: I2C, SPI, UART/USART Peripherals: POR, PWM, WDT Supplier Device Package: 32-QFN (5x5) Number of I/O: 24 DigiKey Programmable: Not Verified |
auf Bestellung 2500 Stücke: Lieferzeit 10-14 Tag (e) |
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CY8C20434-12LQXI | Infineon Technologies |
Description: IC MCU 8BIT 8KB FLASH 32QFNPackaging: Tray Package / Case: 32-UFQFN Exposed Pad Mounting Type: Surface Mount Speed: 12MHz Program Memory Size: 8KB (8K x 8) RAM Size: 512 x 8 Operating Temperature: -40°C ~ 85°C (TA) Oscillator Type: Internal Program Memory Type: FLASH Core Processor: M8C Core Size: 8-Bit Voltage - Supply (Vcc/Vdd): 2.4V ~ 5.25V Connectivity: I2C, SPI Peripherals: LVD, POR, WDT Supplier Device Package: 32-QFN (5x5) Number of I/O: 28 DigiKey Programmable: Not Verified |
auf Bestellung 485 Stücke: Lieferzeit 10-14 Tag (e) |
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CY8C23533-24LQXIT | Infineon Technologies |
Description: IC MCU 8BIT 8KB FLASH 32QFNPackaging: Tape & Reel (TR) Package / Case: 32-UFQFN Exposed Pad Mounting Type: Surface Mount Speed: 24MHz Program Memory Size: 8KB (8K x 8) RAM Size: 256 x 8 Operating Temperature: -40°C ~ 85°C (TA) Oscillator Type: Internal Program Memory Type: FLASH Core Processor: M8C Data Converters: A/D 8x14b; D/A 4x8b Core Size: 8-Bit Voltage - Supply (Vcc/Vdd): 3V ~ 5.25V Connectivity: I²C, SPI, UART/USART Peripherals: LVD, POR, PWM, WDT Supplier Device Package: 32-QFN (5x5) Number of I/O: 26 DigiKey Programmable: Not Verified |
Produkt ist nicht verfügbar |
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CY8C21434-24LKXI | Infineon Technologies |
Description: IC MCU 8BIT 8KB FLASH 32QFN Packaging: Tray Package / Case: 32-UFQFN Exposed Pad Mounting Type: Surface Mount Speed: 24MHz Program Memory Size: 8KB (8K x 8) RAM Size: 512 x 8 Operating Temperature: -40°C ~ 85°C (TA) Oscillator Type: Internal Program Memory Type: FLASH Core Processor: M8C Data Converters: A/D 28x8b Core Size: 8-Bit Voltage - Supply (Vcc/Vdd): 2.4V ~ 5.25V Connectivity: I²C, SPI, UART/USART Peripherals: POR, PWM, WDT Supplier Device Package: 32-QFN (5x5) Number of I/O: 28 DigiKey Programmable: Not Verified |
Produkt ist nicht verfügbar |
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CY8C21434-24LKXIT | Infineon Technologies |
Description: IC MCU 8BIT 8KB FLASH 32QFN Packaging: Tape & Reel (TR) Package / Case: 32-UFQFN Exposed Pad Mounting Type: Surface Mount Speed: 24MHz Program Memory Size: 8KB (8K x 8) RAM Size: 512 x 8 Operating Temperature: -40°C ~ 85°C (TA) Oscillator Type: Internal Program Memory Type: FLASH Core Processor: M8C Data Converters: A/D 28x8b Core Size: 8-Bit Voltage - Supply (Vcc/Vdd): 2.4V ~ 5.25V Connectivity: I²C, SPI, UART/USART Peripherals: POR, PWM, WDT Supplier Device Package: 32-QFN (5x5) Number of I/O: 28 DigiKey Programmable: Not Verified |
Produkt ist nicht verfügbar |
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CY8CTMG100-32LKXI | Infineon Technologies |
Description: IC TRUETOUCH CAPSENSE 32-QFNPackaging: Bulk Package / Case: 32-UFQFN Exposed Pad Mounting Type: Surface Mount Interface: I²C, SPI RAM Size: 512 x 8 Operating Temperature: -40°C ~ 85°C Voltage - Supply: 2.4V ~ 5.25V Controller Series: CY8CT Program Memory Type: FLASH (8kB) Applications: Touchscreen Controller Core Processor: M8C Supplier Device Package: 32-QFN (5x5) DigiKey Programmable: Not Verified |
auf Bestellung 3945 Stücke: Lieferzeit 10-14 Tag (e) |
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IGI60F2020A1LAUMA1 | Infineon Technologies |
Description: IC HALF BRIDGE DRIVER 5A 28TIQFNPackaging: Cut Tape (CT) Package / Case: 28-PowerTQFN Mounting Type: Surface Mount Operating Temperature: -40°C ~ 125°C (TJ) Output Configuration: Half Bridge (3) Voltage - Supply: 3V ~ 3.5V Rds On (Typ): 200mOhm LS, 200mOhm HS Applications: DC Motors, DC-DC Converters Current - Output / Channel: 5A Current - Peak Output: 14.1A Technology: NMOS, PMOS Voltage - Load: 5.5V ~ 12V Supplier Device Package: PG-TIQFN-28-1 Load Type: Inductive, Capacitive, Resistive |
Produkt ist nicht verfügbar |
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IGI60F200A1LAUMA1 | Infineon Technologies |
Description: IC HALF BRIDGE DRIVER 21TIQFN Packaging: Tape & Reel (TR) Package / Case: 21-TQFN Exposed Pad Mounting Type: Surface Mount Output Configuration: Half Bridge Rds On (Typ): 200mOhm Applications: General Purpose Supplier Device Package: PG-TIQFN-21-1 |
Produkt ist nicht verfügbar |
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IRG4PC40FPBF | Infineon Technologies |
Description: IGBT 600V 49A TO-247ACPackaging: Tube Package / Case: TO-247-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Input Type: Standard Vce(on) (Max) @ Vge, Ic: 1.7V @ 15V, 27A Supplier Device Package: TO-247AC Td (on/off) @ 25°C: 26ns/240ns Switching Energy: 370µJ (on), 1.81mJ (off) Test Condition: 480V, 27A, 10Ohm, 15V Gate Charge: 100 nC Current - Collector (Ic) (Max): 49 A Voltage - Collector Emitter Breakdown (Max): 600 V Current - Collector Pulsed (Icm): 200 A Power - Max: 160 W |
Produkt ist nicht verfügbar |
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T501N70TOHXPSA1 | Infineon Technologies |
Description: SCR MODULE 7KV 1000A TO-200ACPackaging: Tray Package / Case: TO-200AC Mounting Type: Clamp On Operating Temperature: -40°C ~ 125°C Structure: Single Current - Hold (Ih) (Max): 350 mA Current - Gate Trigger (Igt) (Max): 350 mA Current - Non Rep. Surge 50, 60Hz (Itsm): 13500A @ 50Hz Number of SCRs, Diodes: 1 SCR Current - On State (It (AV)) (Max): 890 A Voltage - Gate Trigger (Vgt) (Max): 2.5 V Current - On State (It (RMS)) (Max): 1000 A Voltage - Off State: 7 kV |
auf Bestellung 4 Stücke: Lieferzeit 10-14 Tag (e) |
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| CYDC1543-GC | Infineon Technologies |
Description: DEVELOPMENT KIT Packaging: Bulk Contents: Board(s) |
Produkt ist nicht verfügbar |
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CY7C64215-56LTXIT | Infineon Technologies |
Description: MCU ENCORE 16K FLASH 56MHZ 56QFNPackaging: Tape & Reel (TR) Package / Case: 56-VFQFN Exposed Pad Mounting Type: Surface Mount Interface: I2C, USB RAM Size: 1K x 8 Operating Temperature: -40°C ~ 85°C Voltage - Supply: 3V ~ 5.25V Controller Series: CY7C642xx Program Memory Type: FLASH (16kB) Applications: USB Microcontroller Core Processor: M8C Supplier Device Package: 56-QFN-EP (8x8) Number of I/O: 50 DigiKey Programmable: Not Verified |
Produkt ist nicht verfügbar |
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IDP2309XUMA1 | Infineon Technologies |
Description: XDP SMPS TV/PC Packaging: Tape & Reel (TR) |
auf Bestellung 2500 Stücke: Lieferzeit 10-14 Tag (e) |
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IDP2309XUMA1 | Infineon Technologies |
Description: XDP SMPS TV/PC Packaging: Cut Tape (CT) |
auf Bestellung 2500 Stücke: Lieferzeit 10-14 Tag (e) |
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CYPD2134A-24LQXQ | Infineon Technologies |
Description: TYPE-C - SMPS/LPPackaging: Tray Package / Case: 24-UFQFN Exposed Pad Mounting Type: Surface Mount Interface: I2C, SPI, UART/USART, USB RAM Size: 4K x 8 Operating Temperature: -40°C ~ 105°C (TA) Voltage - Supply: 1.71V ~ 5.5V Controller Series: EZ-PD™ Program Memory Type: FLASH (32kB) Applications: USB Type C Core Processor: ARM® Cortex®-M0 Supplier Device Package: 24-QFN (4x4) Number of I/O: 10 |
Produkt ist nicht verfügbar |
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CYPD2134A-24LQXQT | Infineon Technologies |
Description: TYPE-C - SMPS/LPPackaging: Tape & Reel (TR) Package / Case: 24-UFQFN Exposed Pad Mounting Type: Surface Mount Interface: I2C, SPI, UART/USART, USB RAM Size: 4K x 8 Operating Temperature: -40°C ~ 105°C (TA) Voltage - Supply: 1.71V ~ 5.5V Controller Series: EZ-PD™ Program Memory Type: FLASH (32kB) Applications: USB Type C Core Processor: ARM® Cortex®-M0 Supplier Device Package: 24-QFN (4x4) Number of I/O: 10 |
Produkt ist nicht verfügbar |
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CYPDC1185B2-32LQXQ | Infineon Technologies |
Description: TYPE-C - SMPS/LPPackaging: Tray Package / Case: 32-UFQFN Exposed Pad Mounting Type: Surface Mount Interface: I2C, SPI, UART/USART, USB RAM Size: 8K x 8 Operating Temperature: -40°C ~ 105°C (TA) Voltage - Supply: 2.7V ~ 5.5V Controller Series: EZ-PD™ Program Memory Type: FLASH (128kB) Applications: USB Type C Core Processor: ARM® Cortex®-M0 Supplier Device Package: 32-QFN (5x5) Number of I/O: 6 |
Produkt ist nicht verfügbar |
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CYPDC1185B2-32LQXQT | Infineon Technologies |
Description: TYPE-C - SMPS/LPPackaging: Tape & Reel (TR) Package / Case: 32-UFQFN Exposed Pad Mounting Type: Surface Mount Interface: I2C, SPI, UART/USART, USB RAM Size: 8K x 8 Operating Temperature: -40°C ~ 105°C (TA) Voltage - Supply: 2.7V ~ 5.5V Controller Series: EZ-PD™ Program Memory Type: FLASH (128kB) Applications: USB Type C Core Processor: ARM® Cortex®-M0 Supplier Device Package: 32-QFN (5x5) Number of I/O: 6 |
Produkt ist nicht verfügbar |
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IRFR18N15DPBF | Infineon Technologies |
Description: MOSFET N-CH 150V 18A DPAKPackaging: Tube Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 18A (Tc) Rds On (Max) @ Id, Vgs: 125mOhm @ 11A, 10V Power Dissipation (Max): 110W (Tc) Vgs(th) (Max) @ Id: 5.5V @ 250µA Supplier Device Package: TO-252AA (DPAK) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±30V Drain to Source Voltage (Vdss): 150 V Gate Charge (Qg) (Max) @ Vgs: 43 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 900 pF @ 25 V |
Produkt ist nicht verfügbar |
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TLF35585QVS01XUMA1 | Infineon Technologies |
Description: OPTIREG PMICPackaging: Tape & Reel (TR) Package / Case: 48-VFQFN Exposed Pad Mounting Type: Surface Mount Operating Temperature: -40°C ~ 175°C (TJ) Voltage - Supply: 3V ~ 40V Applications: Engine Management Supplier Device Package: PG-VQFN-48-79 Grade: Automotive Qualification: AEC-Q100 |
Produkt ist nicht verfügbar |
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TLF35585QVS02XUMA1 | Infineon Technologies |
Description: OPTIREG PMICPackaging: Tape & Reel (TR) Package / Case: 48-VFQFN Exposed Pad Mounting Type: Surface Mount Operating Temperature: -40°C ~ 175°C (TJ) Voltage - Supply: 3V ~ 40V Supplier Device Package: PG-VQFN-48-79 Grade: Automotive Qualification: AEC-Q100 |
Produkt ist nicht verfügbar |
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TLF35585QUS01XUMA1 | Infineon Technologies |
Description: OPTIREG PMICPackaging: Tape & Reel (TR) Package / Case: 48-TQFP Exposed Pad Mounting Type: Surface Mount Operating Temperature: -40°C ~ 175°C (TJ) Voltage - Supply: 3V ~ 40V Supplier Device Package: PG-TQFP-48-10 Grade: Automotive Qualification: AEC-Q100 |
Produkt ist nicht verfügbar |
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TLF35585QUS02XUMA1 | Infineon Technologies |
Description: OPTIREG PMICPackaging: Tape & Reel (TR) Package / Case: 48-TQFP Exposed Pad Mounting Type: Surface Mount Operating Temperature: -40°C ~ 175°C (TJ) Voltage - Supply: 3V ~ 40V Supplier Device Package: PG-TQFP-48-10 Grade: Automotive Qualification: AEC-Q100 |
Produkt ist nicht verfügbar |
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| SFH756 | Infineon Technologies |
Description: XMITTER FIBER OPTIC 660NMPackaging: Tube Wavelength: 660nm Voltage - Forward (Vf) (Typ): 2.1V Spectral Bandwidth: 25nm Capacitance: 30 pF Voltage - DC Reverse (Vr) (Max): 3 V Current - DC Forward (If) (Max): 50 mA |
Produkt ist nicht verfügbar |
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IRF1010EPBF | Infineon Technologies |
Description: MOSFET N-CH 60V 84A TO220ABPackaging: Tube Package / Case: TO-220-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 84A (Tc) Rds On (Max) @ Id, Vgs: 12mOhm @ 50A, 10V Power Dissipation (Max): 200W (Tc) Vgs(th) (Max) @ Id: 4V @ 250µA Supplier Device Package: TO-220AB Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 60 V Gate Charge (Qg) (Max) @ Vgs: 130 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 3210 pF @ 25 V |
auf Bestellung 713 Stücke: Lieferzeit 10-14 Tag (e) |
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IRFR4105ZPBF | Infineon Technologies |
Description: MOSFET N-CH 55V 30A DPAKPackaging: Tube Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 30A (Tc) Rds On (Max) @ Id, Vgs: 24.5mOhm @ 18A, 10V Power Dissipation (Max): 48W (Tc) Vgs(th) (Max) @ Id: 4V @ 250µA Supplier Device Package: TO-252AA (DPAK) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 55 V Gate Charge (Qg) (Max) @ Vgs: 27 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 740 pF @ 25 V Voltage Coupled to Gate Charge (Qg) (Max) @ Vgs: 10 Voltage Coupled to Input Capacitance (Ciss) (Max) @ Vds: 25 |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
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IRGP4063D1-EPBF | Infineon Technologies |
Description: IGBT 600V 100A TO-247ADPackaging: Tube Package / Case: TO-247-3 Mounting Type: Through Hole Operating Temperature: -40°C ~ 175°C (TJ) Input Type: Standard Reverse Recovery Time (trr): 80 ns Vce(on) (Max) @ Vge, Ic: 2.14V @ 15V, 48A Supplier Device Package: TO-247AD Td (on/off) @ 25°C: 60ns/160ns Switching Energy: 1.4mJ (on), 1.1mJ (off) Test Condition: 400V, 48A, 10Ohm, 15V Gate Charge: 150 nC Current - Collector (Ic) (Max): 100 A Voltage - Collector Emitter Breakdown (Max): 600 V Current - Collector Pulsed (Icm): 192 A Power - Max: 330 W |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
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IRGP4063D1PBF | Infineon Technologies |
Description: IGBT 600V 100A TO-247ACPackaging: Tube Package / Case: TO-247-3 Mounting Type: Through Hole Operating Temperature: -40°C ~ 175°C (TJ) Input Type: Standard Reverse Recovery Time (trr): 80 ns Vce(on) (Max) @ Vge, Ic: 2.14V @ 15V, 48A Supplier Device Package: TO-247AC Td (on/off) @ 25°C: 60ns/160ns Switching Energy: 1.4mJ (on), 1.1mJ (off) Test Condition: 400V, 48A, 10Ohm, 15V Gate Charge: 150 nC Current - Collector (Ic) (Max): 100 A Voltage - Collector Emitter Breakdown (Max): 600 V Current - Collector Pulsed (Icm): 192 A Power - Max: 330 W |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
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IRGP4063D-EPBF | Infineon Technologies |
Description: IGBT TRENCH 600V 96A TO-247ADPackaging: Tube Package / Case: TO-247-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 175°C (TJ) Input Type: Standard Reverse Recovery Time (trr): 115 ns Vce(on) (Max) @ Vge, Ic: 2.14V @ 15V, 48A Supplier Device Package: TO-247AD IGBT Type: Trench Td (on/off) @ 25°C: 60ns/145ns Switching Energy: 625µJ (on), 1.28mJ (off) Test Condition: 400V, 48A, 10Ohm, 15V Gate Charge: 140 nC Current - Collector (Ic) (Max): 96 A Voltage - Collector Emitter Breakdown (Max): 600 V Current - Collector Pulsed (Icm): 200 A Power - Max: 330 W |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
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IRGP4062D-EPBF | Infineon Technologies |
Description: IGBT TRENCH 600V 48A TO-247ADPackaging: Tube Package / Case: TO-247-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 175°C (TJ) Input Type: Standard Reverse Recovery Time (trr): 89 ns Vce(on) (Max) @ Vge, Ic: 1.95V @ 15V, 24A Supplier Device Package: TO-247AD IGBT Type: Trench Td (on/off) @ 25°C: 41ns/104ns Switching Energy: 115µJ (on), 600µJ (off) Test Condition: 400V, 24A, 10Ohm, 15V Gate Charge: 75 nC Current - Collector (Ic) (Max): 48 A Voltage - Collector Emitter Breakdown (Max): 600 V Current - Collector Pulsed (Icm): 72 A Power - Max: 250 W |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
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ESD121B1W0201E6327XTSA1 | Infineon Technologies |
Description: TVS DIODE 7VWM 10VC PGWLL23Packaging: Tape & Reel (TR) Package / Case: 0201 (0603 Metric) Mounting Type: Surface Mount Type: Zener Operating Temperature: -55°C ~ 125°C (TA) Applications: General Purpose Capacitance @ Frequency: 0.2pF @ 1GHz Current - Peak Pulse (10/1000µs): 2A (8/20µs) Voltage - Reverse Standoff (Typ): 7V Supplier Device Package: PG-WLL-2-3 Bidirectional Channels: 1 Voltage - Clamping (Max) @ Ipp: 10V (Typ) Power - Peak Pulse: 24W Power Line Protection: No |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
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ESD121B1W0201E6327XTSA1 | Infineon Technologies |
Description: TVS DIODE 7VWM 10VC PGWLL23Packaging: Cut Tape (CT) Package / Case: 0201 (0603 Metric) Mounting Type: Surface Mount Type: Zener Operating Temperature: -55°C ~ 125°C (TA) Applications: General Purpose Capacitance @ Frequency: 0.2pF @ 1GHz Current - Peak Pulse (10/1000µs): 2A (8/20µs) Voltage - Reverse Standoff (Typ): 7V Supplier Device Package: PG-WLL-2-3 Bidirectional Channels: 1 Voltage - Clamping (Max) @ Ipp: 10V (Typ) Power - Peak Pulse: 24W Power Line Protection: No |
auf Bestellung 11800 Stücke: Lieferzeit 10-14 Tag (e) |
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| OC2321VQFN8XTMA2 | Infineon Technologies |
Description: OC23VQESINDUSTRY Packaging: Bulk |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||
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BGT80E6327XTMA1 | Infineon Technologies |
Description: BACKHAUL TRANSCEICER Packaging: Bulk |
auf Bestellung 5175 Stücke: Lieferzeit 10-14 Tag (e) |
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BGT80E6327XTSA1 | Infineon Technologies |
Description: IC RF TXRX CELLULAR 119WFWLBPackaging: Bulk Package / Case: 119-WFBGA, WLBGA Mounting Type: Surface Mount Frequency: 71GHz ~ 86GHz Type: TxRx Only Voltage - Supply: 12V Power - Output: 12dBm Protocol: LTE, WiMax Supplier Device Package: PG-WFWLB-119-1 GPIO: 24 Modulation: QPSK RF Family/Standard: Cellular Serial Interfaces: SPI DigiKey Programmable: Not Verified |
auf Bestellung 9474 Stücke: Lieferzeit 10-14 Tag (e) |
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| CY3202-C | Infineon Technologies |
Description: PSOC C-COMPILER FOR CY8C25/8C26Type: Compiler |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||
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IKY150N65EH7XKSA1 | Infineon Technologies |
Description: IGBT TRENCH FS 650V 160A TO247-4Packaging: Tube Package / Case: TO-247-4 Mounting Type: Through Hole Operating Temperature: -40°C ~ 175°C (TJ) Input Type: Standard Reverse Recovery Time (trr): 65 ns Vce(on) (Max) @ Vge, Ic: 1.65V @ 15V, 150A Supplier Device Package: PG-TO247-4-2 IGBT Type: Trench Field Stop Td (on/off) @ 25°C: 44ns/343ns Switching Energy: 2.3mJ (on), 2.9mJ (off) Test Condition: 400V, 150A, 10Ohm, 15V Gate Charge: 300 nC Current - Collector (Ic) (Max): 160 A Voltage - Collector Emitter Breakdown (Max): 650 V Current - Collector Pulsed (Icm): 600 A Power - Max: 621 W |
auf Bestellung 234 Stücke: Lieferzeit 10-14 Tag (e) |
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IRGP30B120KD-EP | Infineon Technologies |
Description: IGBT NPT 1200V 60A TO-247ADPackaging: Tube Package / Case: TO-247-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Input Type: Standard Reverse Recovery Time (trr): 300 ns Vce(on) (Max) @ Vge, Ic: 4V @ 15V, 60A Supplier Device Package: TO-247AD IGBT Type: NPT Switching Energy: 1.07mJ (on), 1.49mJ (off) Test Condition: 600V, 25A, 5Ohm, 15V Gate Charge: 169 nC Current - Collector (Ic) (Max): 60 A Voltage - Collector Emitter Breakdown (Max): 1200 V Current - Collector Pulsed (Icm): 120 A Power - Max: 300 W |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
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SAK-XC2263N40F40LAAKXUMA1 | Infineon Technologies |
Description: 16-BIT C166 MMC - XC2200 FAMILYPackaging: Bulk Package / Case: 100-LQFP Exposed Pad Mounting Type: Surface Mount Speed: 40MHz Program Memory Size: 320KB (320K x 8) RAM Size: 42K x 8 Operating Temperature: -40°C ~ 125°C (TA) Oscillator Type: Internal Program Memory Type: FLASH Core Processor: C166SV2 Data Converters: A/D 16x10b Core Size: 16/32-Bit Voltage - Supply (Vcc/Vdd): 3V ~ 5.5V Connectivity: CANbus, EBI/EMI, I²C, LINbus, SPI, SSC, UART/USART, USI Peripherals: I²S, POR, PWM, WDT Supplier Device Package: PG-LQFP-100-8 Number of I/O: 76 DigiKey Programmable: Not Verified |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
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SAF-XE164HM-72F80LAA | Infineon Technologies |
Description: 16-BIT FLASH RISC MCUPackaging: Bulk Package / Case: 100-LQFP Exposed Pad Mounting Type: Surface Mount Speed: 80MHz Program Memory Size: 576KB (576K x 8) RAM Size: 50K x 8 Operating Temperature: -40°C ~ 85°C (TA) Oscillator Type: Internal Program Memory Type: FLASH Core Processor: C166SV2 Data Converters: A/D 16x8b, 10b SAR Core Size: 16-Bit Voltage - Supply (Vcc/Vdd): 3V ~ 5.5V Connectivity: EBI/EMI, I²C, LINbus, SPI, SSC, UART/USART, USI Peripherals: I²S, POR, PWM, WDT Supplier Device Package: PG-LQFP-100-3 Number of I/O: 76 DigiKey Programmable: Not Verified |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
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IRGP50B60PD1PBF | Infineon Technologies |
Description: IGBT NPT 600V 75A TO-247ACPackaging: Tube Package / Case: TO-247-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Input Type: Standard Reverse Recovery Time (trr): 42 ns Vce(on) (Max) @ Vge, Ic: 2.85V @ 15V, 50A Supplier Device Package: TO-247AC IGBT Type: NPT Td (on/off) @ 25°C: 30ns/130ns Switching Energy: 255µJ (on), 375µJ (off) Test Condition: 390V, 33A, 3.3Ohm, 15V Gate Charge: 205 nC Current - Collector (Ic) (Max): 75 A Voltage - Collector Emitter Breakdown (Max): 600 V Current - Collector Pulsed (Icm): 150 A Power - Max: 390 W |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
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IRGP50B60PDPBF | Infineon Technologies |
Description: IGBT NPT 600V 75A TO-247ACPackaging: Tube Package / Case: TO-247-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Input Type: Standard Reverse Recovery Time (trr): 50 ns Vce(on) (Max) @ Vge, Ic: 2.6V @ 15V, 50A Supplier Device Package: TO-247AC IGBT Type: NPT Td (on/off) @ 25°C: 34ns/130ns Switching Energy: 360µJ (on), 380µJ (off) Test Condition: 390V, 33A, 3.3Ohm, 15V Gate Charge: 240 nC Current - Collector (Ic) (Max): 75 A Voltage - Collector Emitter Breakdown (Max): 600 V Current - Collector Pulsed (Icm): 150 A Power - Max: 370 W |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
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AUIRGP50B60PD1 | Infineon Technologies |
Description: IGBT NPT 600V 75A TO-247ACPackaging: Tube Package / Case: TO-247-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Input Type: Standard Reverse Recovery Time (trr): 42 ns Vce(on) (Max) @ Vge, Ic: 2.85V @ 15V, 50A Supplier Device Package: TO-247AC IGBT Type: NPT Td (on/off) @ 25°C: 30ns/130ns Switching Energy: 255µJ (on), 375µJ (off) Test Condition: 390V, 33A, 3.3Ohm, 15V Gate Charge: 205 nC Current - Collector (Ic) (Max): 75 A Voltage - Collector Emitter Breakdown (Max): 600 V Current - Collector Pulsed (Icm): 150 A Power - Max: 390 W |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
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IKQ50N120CT2XKSA1 | Infineon Technologies |
Description: IGBT TRENCH FS 1200V 100A TO247Packaging: Tube Package / Case: TO-247-3 Mounting Type: Through Hole Operating Temperature: -40°C ~ 175°C (TJ) Input Type: Standard Vce(on) (Max) @ Vge, Ic: 2.15V @ 15V, 50A Supplier Device Package: PG-TO247-3-46 IGBT Type: Trench Field Stop Td (on/off) @ 25°C: 34ns/312ns Switching Energy: 3.8mJ (on), 3.3mJ (off) Test Condition: 400V, 50A, 10Ohm, 15V Gate Charge: 235 nC Current - Collector (Ic) (Max): 100 A Voltage - Collector Emitter Breakdown (Max): 1200 V Current - Collector Pulsed (Icm): 200 A Power - Max: 652 W |
auf Bestellung 1523 Stücke: Lieferzeit 10-14 Tag (e) |
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IPD65R1K4C6ATMA1 | Infineon Technologies |
Description: MOSFET N-CH 650V 3.2A TO252-3Packaging: Tape & Reel (TR) Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 3.2A (Tc) Rds On (Max) @ Id, Vgs: 1.4Ohm @ 1A, 10V Power Dissipation (Max): 28W (Tc) Vgs(th) (Max) @ Id: 3.5V @ 100µA Supplier Device Package: PG-TO252-3 Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 650 V Gate Charge (Qg) (Max) @ Vgs: 10.5 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 225 pF @ 100 V |
auf Bestellung 10000 Stücke: Lieferzeit 10-14 Tag (e) |
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IPD65R1K4C6ATMA1 | Infineon Technologies |
Description: MOSFET N-CH 650V 3.2A TO252-3Packaging: Cut Tape (CT) Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 3.2A (Tc) Rds On (Max) @ Id, Vgs: 1.4Ohm @ 1A, 10V Power Dissipation (Max): 28W (Tc) Vgs(th) (Max) @ Id: 3.5V @ 100µA Supplier Device Package: PG-TO252-3 Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 650 V Gate Charge (Qg) (Max) @ Vgs: 10.5 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 225 pF @ 100 V |
auf Bestellung 12335 Stücke: Lieferzeit 10-14 Tag (e) |
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IPD65R420CFDAATMA1 | Infineon Technologies |
Description: MOSFET N-CH 650V 8.7A TO252-3Packaging: Cut Tape (CT) Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Mounting Type: Surface Mount Operating Temperature: -40°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 8.7A (Tc) Rds On (Max) @ Id, Vgs: 420mOhm @ 3.4A, 10V Power Dissipation (Max): 83.3W (Tc) Vgs(th) (Max) @ Id: 4.5V @ 345µA Supplier Device Package: PG-TO252-3 Grade: Automotive Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 650 V Gate Charge (Qg) (Max) @ Vgs: 32 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 870 pF @ 100 V Qualification: AEC-Q101 |
auf Bestellung 1919 Stücke: Lieferzeit 10-14 Tag (e) |
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| TLE49411CHAMA2 |
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Hersteller: Infineon Technologies
Description: MAGNETIC SWITCH SPEED SENSOR
Packaging: Tape & Box (TB)
Package / Case: 2-SIP, SSO-2-53
Output Type: Current Source
Polarization: North Pole, South Pole
Mounting Type: Through Hole
Function: Special Purpose
Operating Temperature: -40°C ~ 150°C
Voltage - Supply: 4.5V ~ 20V
Technology: Hall Effect
Current - Supply (Max): 16.8mA
Supplier Device Package: PG-SSO-2-53
Grade: Automotive
Qualification: AEC-Q100
Description: MAGNETIC SWITCH SPEED SENSOR
Packaging: Tape & Box (TB)
Package / Case: 2-SIP, SSO-2-53
Output Type: Current Source
Polarization: North Pole, South Pole
Mounting Type: Through Hole
Function: Special Purpose
Operating Temperature: -40°C ~ 150°C
Voltage - Supply: 4.5V ~ 20V
Technology: Hall Effect
Current - Supply (Max): 16.8mA
Supplier Device Package: PG-SSO-2-53
Grade: Automotive
Qualification: AEC-Q100
auf Bestellung 1500 Stücke:
Lieferzeit 10-14 Tag (e)| Anzahl | Preis |
|---|---|
| 1500+ | 2.15 EUR |
| TLE4929CXVAM38NAHAMA1 |
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Hersteller: Infineon Technologies
Description: SPEED SENSORS
Features: Programmable, Temperature Compensated
Packaging: Cut Tape (CT)
Package / Case: 3-SIP Module
Output Type: Open Drain
Mounting Type: Through Hole
Axis: Single
Operating Temperature: -40°C ~ 175°C (TJ)
Voltage - Supply: 4V ~ 16V
Technology: Hall Effect
Resolution: 16 b
Sensing Range: ±120mT
Current - Output (Max): 15mA
Current - Supply (Max): 13.4mA
Supplier Device Package: PG-SSO-3-52
Grade: Automotive
Qualification: AEC-Q100
Description: SPEED SENSORS
Features: Programmable, Temperature Compensated
Packaging: Cut Tape (CT)
Package / Case: 3-SIP Module
Output Type: Open Drain
Mounting Type: Through Hole
Axis: Single
Operating Temperature: -40°C ~ 175°C (TJ)
Voltage - Supply: 4V ~ 16V
Technology: Hall Effect
Resolution: 16 b
Sensing Range: ±120mT
Current - Output (Max): 15mA
Current - Supply (Max): 13.4mA
Supplier Device Package: PG-SSO-3-52
Grade: Automotive
Qualification: AEC-Q100
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| DD98N20KHPSA1 |
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Hersteller: Infineon Technologies
Description: DIODE MODULE GP 2000V 98A
Packaging: Bulk
Package / Case: Module
Mounting Type: Chassis Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard
Diode Configuration: 1 Pair Series Connection
Current - Average Rectified (Io) (per Diode): 98A
Supplier Device Package: Module
Operating Temperature - Junction: -40°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 2000 V
Voltage - Forward (Vf) (Max) @ If: 1.53 V @ 300 A
Current - Reverse Leakage @ Vr: 25 mA @ 2000 V
Description: DIODE MODULE GP 2000V 98A
Packaging: Bulk
Package / Case: Module
Mounting Type: Chassis Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard
Diode Configuration: 1 Pair Series Connection
Current - Average Rectified (Io) (per Diode): 98A
Supplier Device Package: Module
Operating Temperature - Junction: -40°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 2000 V
Voltage - Forward (Vf) (Max) @ If: 1.53 V @ 300 A
Current - Reverse Leakage @ Vr: 25 mA @ 2000 V
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| AUIRL7732S2TR |
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Hersteller: Infineon Technologies
Description: MOSFET N-CH 40V 14A DIRECTFET SC
Packaging: Tape & Reel (TR)
Package / Case: DirectFET™ Isometric SC
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 14A (Ta)
Rds On (Max) @ Id, Vgs: 6.6mOhm @ 35A, 10V
Power Dissipation (Max): 2.2W (Ta), 41W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 50µA
Supplier Device Package: DIRECTFET™ SC
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±16V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 33 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 2020 pF @ 25 V
Description: MOSFET N-CH 40V 14A DIRECTFET SC
Packaging: Tape & Reel (TR)
Package / Case: DirectFET™ Isometric SC
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 14A (Ta)
Rds On (Max) @ Id, Vgs: 6.6mOhm @ 35A, 10V
Power Dissipation (Max): 2.2W (Ta), 41W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 50µA
Supplier Device Package: DIRECTFET™ SC
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±16V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 33 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 2020 pF @ 25 V
auf Bestellung 4800 Stücke:
Lieferzeit 10-14 Tag (e)| Anzahl | Preis |
|---|---|
| 4800+ | 1.24 EUR |
| AUIRL7732S2TR |
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Hersteller: Infineon Technologies
Description: MOSFET N-CH 40V 14A DIRECTFET SC
Packaging: Cut Tape (CT)
Package / Case: DirectFET™ Isometric SC
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 14A (Ta)
Rds On (Max) @ Id, Vgs: 6.6mOhm @ 35A, 10V
Power Dissipation (Max): 2.2W (Ta), 41W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 50µA
Supplier Device Package: DIRECTFET™ SC
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±16V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 33 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 2020 pF @ 25 V
Description: MOSFET N-CH 40V 14A DIRECTFET SC
Packaging: Cut Tape (CT)
Package / Case: DirectFET™ Isometric SC
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 14A (Ta)
Rds On (Max) @ Id, Vgs: 6.6mOhm @ 35A, 10V
Power Dissipation (Max): 2.2W (Ta), 41W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 50µA
Supplier Device Package: DIRECTFET™ SC
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±16V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 33 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 2020 pF @ 25 V
auf Bestellung 4800 Stücke:
Lieferzeit 10-14 Tag (e)| Anzahl | Preis |
|---|---|
| 7+ | 2.85 EUR |
| 10+ | 2.37 EUR |
| 100+ | 1.88 EUR |
| 500+ | 1.59 EUR |
| 1000+ | 1.35 EUR |
| 2000+ | 1.28 EUR |
| TC277TP64F200SDCKXUMA1 |
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Hersteller: Infineon Technologies
Description: IC MCU 32BIT 4MB FLASH 292LFBGA
Packaging: Tape & Reel (TR)
Package / Case: 292-LFBGA
Mounting Type: Surface Mount
Speed: 200MHz
Program Memory Size: 4MB (4M x 8)
RAM Size: 472K x 8
Operating Temperature: -40°C ~ 125°C (TA)
Oscillator Type: External
Program Memory Type: FLASH
EEPROM Size: 64K x 8
Core Processor: TriCore™
Data Converters: A/D 60x12b, 6 x Sigma-Delta
Core Size: 32-Bit Tri-Core
Voltage - Supply (Vcc/Vdd): 3V ~ 5.5V
Connectivity: ASC, CANbus, Ethernet, FlexRay, HSSL, I2C, LINbus, MSC, PSI5, QSPI, SENT
Peripherals: DMA, WDT
Supplier Device Package: PG-LFBGA-292-6
Number of I/O: 169
DigiKey Programmable: Not Verified
Description: IC MCU 32BIT 4MB FLASH 292LFBGA
Packaging: Tape & Reel (TR)
Package / Case: 292-LFBGA
Mounting Type: Surface Mount
Speed: 200MHz
Program Memory Size: 4MB (4M x 8)
RAM Size: 472K x 8
Operating Temperature: -40°C ~ 125°C (TA)
Oscillator Type: External
Program Memory Type: FLASH
EEPROM Size: 64K x 8
Core Processor: TriCore™
Data Converters: A/D 60x12b, 6 x Sigma-Delta
Core Size: 32-Bit Tri-Core
Voltage - Supply (Vcc/Vdd): 3V ~ 5.5V
Connectivity: ASC, CANbus, Ethernet, FlexRay, HSSL, I2C, LINbus, MSC, PSI5, QSPI, SENT
Peripherals: DMA, WDT
Supplier Device Package: PG-LFBGA-292-6
Number of I/O: 169
DigiKey Programmable: Not Verified
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| TC277TP64F200SDCKXUMA1 |
![]() |
Hersteller: Infineon Technologies
Description: IC MCU 32BIT 4MB FLASH 292LFBGA
Packaging: Cut Tape (CT)
Package / Case: 292-LFBGA
Mounting Type: Surface Mount
Speed: 200MHz
Program Memory Size: 4MB (4M x 8)
RAM Size: 472K x 8
Operating Temperature: -40°C ~ 125°C (TA)
Oscillator Type: External
Program Memory Type: FLASH
EEPROM Size: 64K x 8
Core Processor: TriCore™
Data Converters: A/D 60x12b, 6 x Sigma-Delta
Core Size: 32-Bit Tri-Core
Voltage - Supply (Vcc/Vdd): 3V ~ 5.5V
Connectivity: ASC, CANbus, Ethernet, FlexRay, HSSL, I2C, LINbus, MSC, PSI5, QSPI, SENT
Peripherals: DMA, WDT
Supplier Device Package: PG-LFBGA-292-6
Number of I/O: 169
DigiKey Programmable: Not Verified
Description: IC MCU 32BIT 4MB FLASH 292LFBGA
Packaging: Cut Tape (CT)
Package / Case: 292-LFBGA
Mounting Type: Surface Mount
Speed: 200MHz
Program Memory Size: 4MB (4M x 8)
RAM Size: 472K x 8
Operating Temperature: -40°C ~ 125°C (TA)
Oscillator Type: External
Program Memory Type: FLASH
EEPROM Size: 64K x 8
Core Processor: TriCore™
Data Converters: A/D 60x12b, 6 x Sigma-Delta
Core Size: 32-Bit Tri-Core
Voltage - Supply (Vcc/Vdd): 3V ~ 5.5V
Connectivity: ASC, CANbus, Ethernet, FlexRay, HSSL, I2C, LINbus, MSC, PSI5, QSPI, SENT
Peripherals: DMA, WDT
Supplier Device Package: PG-LFBGA-292-6
Number of I/O: 169
DigiKey Programmable: Not Verified
auf Bestellung 995 Stücke:
Lieferzeit 10-14 Tag (e)| Anzahl | Preis |
|---|---|
| 1+ | 115.24 EUR |
| 10+ | 92.74 EUR |
| 25+ | 87.12 EUR |
| 100+ | 80.94 EUR |
| BC847CWH6433XTMA1 |
![]() |
Hersteller: Infineon Technologies
Description: TRANS NPN 45V 0.1A PG-SOT323
Packaging: Tape & Reel (TR)
Package / Case: SC-70, SOT-323
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 600mV @ 5mA, 100mA
Current - Collector Cutoff (Max): 15nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 420 @ 2mA, 5V
Frequency - Transition: 250MHz
Supplier Device Package: PG-SOT323
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 45 V
Power - Max: 250 mW
Description: TRANS NPN 45V 0.1A PG-SOT323
Packaging: Tape & Reel (TR)
Package / Case: SC-70, SOT-323
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 600mV @ 5mA, 100mA
Current - Collector Cutoff (Max): 15nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 420 @ 2mA, 5V
Frequency - Transition: 250MHz
Supplier Device Package: PG-SOT323
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 45 V
Power - Max: 250 mW
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| BC 847CW B6327 |
![]() |
Hersteller: Infineon Technologies
Description: TRANS NPN 45V 0.1A SOT323
Packaging: Tape & Reel (TR)
Package / Case: SC-70, SOT-323
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 600mV @ 5mA, 100mA
Current - Collector Cutoff (Max): 15nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 420 @ 2mA, 5V
Frequency - Transition: 250MHz
Supplier Device Package: PG-SOT323
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 45 V
Power - Max: 250 mW
Description: TRANS NPN 45V 0.1A SOT323
Packaging: Tape & Reel (TR)
Package / Case: SC-70, SOT-323
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 600mV @ 5mA, 100mA
Current - Collector Cutoff (Max): 15nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 420 @ 2mA, 5V
Frequency - Transition: 250MHz
Supplier Device Package: PG-SOT323
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 45 V
Power - Max: 250 mW
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| IRS2110PBF | ![]() |
![]() |
Hersteller: Infineon Technologies
Description: IC GATE DRVR HALF-BRIDGE 14DIP
Packaging: Tube
Package / Case: 14-DIP (0.300", 7.62mm)
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 150°C (TJ)
Voltage - Supply: 10V ~ 20V
Input Type: Non-Inverting
High Side Voltage - Max (Bootstrap): 500 V
Supplier Device Package: 14-DIP
Rise / Fall Time (Typ): 25ns, 17ns
Channel Type: Independent
Driven Configuration: Half-Bridge
Number of Drivers: 2
Gate Type: IGBT, MOSFET (N-Channel)
Logic Voltage - VIL, VIH: 6V, 9.5V
Current - Peak Output (Source, Sink): 2.5A, 2.5A
DigiKey Programmable: Not Verified
Description: IC GATE DRVR HALF-BRIDGE 14DIP
Packaging: Tube
Package / Case: 14-DIP (0.300", 7.62mm)
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 150°C (TJ)
Voltage - Supply: 10V ~ 20V
Input Type: Non-Inverting
High Side Voltage - Max (Bootstrap): 500 V
Supplier Device Package: 14-DIP
Rise / Fall Time (Typ): 25ns, 17ns
Channel Type: Independent
Driven Configuration: Half-Bridge
Number of Drivers: 2
Gate Type: IGBT, MOSFET (N-Channel)
Logic Voltage - VIL, VIH: 6V, 9.5V
Current - Peak Output (Source, Sink): 2.5A, 2.5A
DigiKey Programmable: Not Verified
auf Bestellung 1489 Stücke:
Lieferzeit 10-14 Tag (e)| Anzahl | Preis |
|---|---|
| 3+ | 6.69 EUR |
| 10+ | 5.07 EUR |
| 25+ | 4.67 EUR |
| 100+ | 4.23 EUR |
| 250+ | 4.01 EUR |
| 500+ | 3.89 EUR |
| 1000+ | 3.78 EUR |
| CY8C21334-24PVXI | ![]() |
![]() |
Hersteller: Infineon Technologies
Description: IC MCU 8BIT 8KB FLASH 20SSOP
Packaging: Bulk
Package / Case: 20-SSOP (0.209", 5.30mm Width)
Mounting Type: Surface Mount
Speed: 24MHz
Program Memory Size: 8KB (8K x 8)
RAM Size: 512 x 8
Operating Temperature: -40°C ~ 85°C (TA)
Oscillator Type: Internal
Program Memory Type: FLASH
Core Processor: M8C
Data Converters: A/D 28x8b
Core Size: 8-Bit
Voltage - Supply (Vcc/Vdd): 2.4V ~ 5.25V
Connectivity: I2C, SPI, UART/USART
Peripherals: POR, PWM, WDT
Supplier Device Package: 20-SSOP
Number of I/O: 16
DigiKey Programmable: Verified
Description: IC MCU 8BIT 8KB FLASH 20SSOP
Packaging: Bulk
Package / Case: 20-SSOP (0.209", 5.30mm Width)
Mounting Type: Surface Mount
Speed: 24MHz
Program Memory Size: 8KB (8K x 8)
RAM Size: 512 x 8
Operating Temperature: -40°C ~ 85°C (TA)
Oscillator Type: Internal
Program Memory Type: FLASH
Core Processor: M8C
Data Converters: A/D 28x8b
Core Size: 8-Bit
Voltage - Supply (Vcc/Vdd): 2.4V ~ 5.25V
Connectivity: I2C, SPI, UART/USART
Peripherals: POR, PWM, WDT
Supplier Device Package: 20-SSOP
Number of I/O: 16
DigiKey Programmable: Verified
auf Bestellung 415 Stücke:
Lieferzeit 10-14 Tag (e)| Anzahl | Preis |
|---|---|
| 82+ | 6.21 EUR |
| IRGS14C40LPBF | ![]() |
![]() |
Hersteller: Infineon Technologies
Description: IGBT 430V 20A D2PAK
Packaging: Tube
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 175°C (TJ)
Input Type: Logic
Vce(on) (Max) @ Vge, Ic: 1.75V @ 5V, 14A
Supplier Device Package: D2PAK
Td (on/off) @ 25°C: 900ns/6µs
Gate Charge: 27 nC
Current - Collector (Ic) (Max): 20 A
Voltage - Collector Emitter Breakdown (Max): 430 V
Power - Max: 125 W
Description: IGBT 430V 20A D2PAK
Packaging: Tube
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 175°C (TJ)
Input Type: Logic
Vce(on) (Max) @ Vge, Ic: 1.75V @ 5V, 14A
Supplier Device Package: D2PAK
Td (on/off) @ 25°C: 900ns/6µs
Gate Charge: 27 nC
Current - Collector (Ic) (Max): 20 A
Voltage - Collector Emitter Breakdown (Max): 430 V
Power - Max: 125 W
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| CY8C24423A-24LTXIT |
![]() |
Hersteller: Infineon Technologies
Description: IC MCU 8BIT 4KB FLASH 32QFN
Packaging: Tape & Reel (TR)
Package / Case: 32-UFQFN Exposed Pad
Mounting Type: Surface Mount
Speed: 24MHz
Program Memory Size: 4KB (4K x 8)
RAM Size: 256 x 8
Operating Temperature: -40°C ~ 85°C (TA)
Oscillator Type: Internal
Program Memory Type: FLASH
Core Processor: M8C
Data Converters: A/D 10x14b; D/A 2x9b
Core Size: 8-Bit
Voltage - Supply (Vcc/Vdd): 2.4V ~ 5.25V
Connectivity: I2C, SPI, UART/USART
Peripherals: POR, PWM, WDT
Supplier Device Package: 32-QFN (5x5)
Number of I/O: 24
DigiKey Programmable: Not Verified
Description: IC MCU 8BIT 4KB FLASH 32QFN
Packaging: Tape & Reel (TR)
Package / Case: 32-UFQFN Exposed Pad
Mounting Type: Surface Mount
Speed: 24MHz
Program Memory Size: 4KB (4K x 8)
RAM Size: 256 x 8
Operating Temperature: -40°C ~ 85°C (TA)
Oscillator Type: Internal
Program Memory Type: FLASH
Core Processor: M8C
Data Converters: A/D 10x14b; D/A 2x9b
Core Size: 8-Bit
Voltage - Supply (Vcc/Vdd): 2.4V ~ 5.25V
Connectivity: I2C, SPI, UART/USART
Peripherals: POR, PWM, WDT
Supplier Device Package: 32-QFN (5x5)
Number of I/O: 24
DigiKey Programmable: Not Verified
auf Bestellung 2500 Stücke:
Lieferzeit 10-14 Tag (e)| Anzahl | Preis |
|---|---|
| 2500+ | 5.16 EUR |
| CY8C20434-12LQXI |
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Hersteller: Infineon Technologies
Description: IC MCU 8BIT 8KB FLASH 32QFN
Packaging: Tray
Package / Case: 32-UFQFN Exposed Pad
Mounting Type: Surface Mount
Speed: 12MHz
Program Memory Size: 8KB (8K x 8)
RAM Size: 512 x 8
Operating Temperature: -40°C ~ 85°C (TA)
Oscillator Type: Internal
Program Memory Type: FLASH
Core Processor: M8C
Core Size: 8-Bit
Voltage - Supply (Vcc/Vdd): 2.4V ~ 5.25V
Connectivity: I2C, SPI
Peripherals: LVD, POR, WDT
Supplier Device Package: 32-QFN (5x5)
Number of I/O: 28
DigiKey Programmable: Not Verified
Description: IC MCU 8BIT 8KB FLASH 32QFN
Packaging: Tray
Package / Case: 32-UFQFN Exposed Pad
Mounting Type: Surface Mount
Speed: 12MHz
Program Memory Size: 8KB (8K x 8)
RAM Size: 512 x 8
Operating Temperature: -40°C ~ 85°C (TA)
Oscillator Type: Internal
Program Memory Type: FLASH
Core Processor: M8C
Core Size: 8-Bit
Voltage - Supply (Vcc/Vdd): 2.4V ~ 5.25V
Connectivity: I2C, SPI
Peripherals: LVD, POR, WDT
Supplier Device Package: 32-QFN (5x5)
Number of I/O: 28
DigiKey Programmable: Not Verified
auf Bestellung 485 Stücke:
Lieferzeit 10-14 Tag (e)| Anzahl | Preis |
|---|---|
| 3+ | 6.51 EUR |
| 10+ | 4.94 EUR |
| 25+ | 4.55 EUR |
| 100+ | 4.11 EUR |
| CY8C23533-24LQXIT |
![]() |
Hersteller: Infineon Technologies
Description: IC MCU 8BIT 8KB FLASH 32QFN
Packaging: Tape & Reel (TR)
Package / Case: 32-UFQFN Exposed Pad
Mounting Type: Surface Mount
Speed: 24MHz
Program Memory Size: 8KB (8K x 8)
RAM Size: 256 x 8
Operating Temperature: -40°C ~ 85°C (TA)
Oscillator Type: Internal
Program Memory Type: FLASH
Core Processor: M8C
Data Converters: A/D 8x14b; D/A 4x8b
Core Size: 8-Bit
Voltage - Supply (Vcc/Vdd): 3V ~ 5.25V
Connectivity: I²C, SPI, UART/USART
Peripherals: LVD, POR, PWM, WDT
Supplier Device Package: 32-QFN (5x5)
Number of I/O: 26
DigiKey Programmable: Not Verified
Description: IC MCU 8BIT 8KB FLASH 32QFN
Packaging: Tape & Reel (TR)
Package / Case: 32-UFQFN Exposed Pad
Mounting Type: Surface Mount
Speed: 24MHz
Program Memory Size: 8KB (8K x 8)
RAM Size: 256 x 8
Operating Temperature: -40°C ~ 85°C (TA)
Oscillator Type: Internal
Program Memory Type: FLASH
Core Processor: M8C
Data Converters: A/D 8x14b; D/A 4x8b
Core Size: 8-Bit
Voltage - Supply (Vcc/Vdd): 3V ~ 5.25V
Connectivity: I²C, SPI, UART/USART
Peripherals: LVD, POR, PWM, WDT
Supplier Device Package: 32-QFN (5x5)
Number of I/O: 26
DigiKey Programmable: Not Verified
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| CY8C21434-24LKXI |
Hersteller: Infineon Technologies
Description: IC MCU 8BIT 8KB FLASH 32QFN
Packaging: Tray
Package / Case: 32-UFQFN Exposed Pad
Mounting Type: Surface Mount
Speed: 24MHz
Program Memory Size: 8KB (8K x 8)
RAM Size: 512 x 8
Operating Temperature: -40°C ~ 85°C (TA)
Oscillator Type: Internal
Program Memory Type: FLASH
Core Processor: M8C
Data Converters: A/D 28x8b
Core Size: 8-Bit
Voltage - Supply (Vcc/Vdd): 2.4V ~ 5.25V
Connectivity: I²C, SPI, UART/USART
Peripherals: POR, PWM, WDT
Supplier Device Package: 32-QFN (5x5)
Number of I/O: 28
DigiKey Programmable: Not Verified
Description: IC MCU 8BIT 8KB FLASH 32QFN
Packaging: Tray
Package / Case: 32-UFQFN Exposed Pad
Mounting Type: Surface Mount
Speed: 24MHz
Program Memory Size: 8KB (8K x 8)
RAM Size: 512 x 8
Operating Temperature: -40°C ~ 85°C (TA)
Oscillator Type: Internal
Program Memory Type: FLASH
Core Processor: M8C
Data Converters: A/D 28x8b
Core Size: 8-Bit
Voltage - Supply (Vcc/Vdd): 2.4V ~ 5.25V
Connectivity: I²C, SPI, UART/USART
Peripherals: POR, PWM, WDT
Supplier Device Package: 32-QFN (5x5)
Number of I/O: 28
DigiKey Programmable: Not Verified
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| CY8C21434-24LKXIT |
Hersteller: Infineon Technologies
Description: IC MCU 8BIT 8KB FLASH 32QFN
Packaging: Tape & Reel (TR)
Package / Case: 32-UFQFN Exposed Pad
Mounting Type: Surface Mount
Speed: 24MHz
Program Memory Size: 8KB (8K x 8)
RAM Size: 512 x 8
Operating Temperature: -40°C ~ 85°C (TA)
Oscillator Type: Internal
Program Memory Type: FLASH
Core Processor: M8C
Data Converters: A/D 28x8b
Core Size: 8-Bit
Voltage - Supply (Vcc/Vdd): 2.4V ~ 5.25V
Connectivity: I²C, SPI, UART/USART
Peripherals: POR, PWM, WDT
Supplier Device Package: 32-QFN (5x5)
Number of I/O: 28
DigiKey Programmable: Not Verified
Description: IC MCU 8BIT 8KB FLASH 32QFN
Packaging: Tape & Reel (TR)
Package / Case: 32-UFQFN Exposed Pad
Mounting Type: Surface Mount
Speed: 24MHz
Program Memory Size: 8KB (8K x 8)
RAM Size: 512 x 8
Operating Temperature: -40°C ~ 85°C (TA)
Oscillator Type: Internal
Program Memory Type: FLASH
Core Processor: M8C
Data Converters: A/D 28x8b
Core Size: 8-Bit
Voltage - Supply (Vcc/Vdd): 2.4V ~ 5.25V
Connectivity: I²C, SPI, UART/USART
Peripherals: POR, PWM, WDT
Supplier Device Package: 32-QFN (5x5)
Number of I/O: 28
DigiKey Programmable: Not Verified
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| CY8CTMG100-32LKXI |
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Hersteller: Infineon Technologies
Description: IC TRUETOUCH CAPSENSE 32-QFN
Packaging: Bulk
Package / Case: 32-UFQFN Exposed Pad
Mounting Type: Surface Mount
Interface: I²C, SPI
RAM Size: 512 x 8
Operating Temperature: -40°C ~ 85°C
Voltage - Supply: 2.4V ~ 5.25V
Controller Series: CY8CT
Program Memory Type: FLASH (8kB)
Applications: Touchscreen Controller
Core Processor: M8C
Supplier Device Package: 32-QFN (5x5)
DigiKey Programmable: Not Verified
Description: IC TRUETOUCH CAPSENSE 32-QFN
Packaging: Bulk
Package / Case: 32-UFQFN Exposed Pad
Mounting Type: Surface Mount
Interface: I²C, SPI
RAM Size: 512 x 8
Operating Temperature: -40°C ~ 85°C
Voltage - Supply: 2.4V ~ 5.25V
Controller Series: CY8CT
Program Memory Type: FLASH (8kB)
Applications: Touchscreen Controller
Core Processor: M8C
Supplier Device Package: 32-QFN (5x5)
DigiKey Programmable: Not Verified
auf Bestellung 3945 Stücke:
Lieferzeit 10-14 Tag (e)| Anzahl | Preis |
|---|---|
| 59+ | 9.03 EUR |
| IGI60F2020A1LAUMA1 |
![]() |
Hersteller: Infineon Technologies
Description: IC HALF BRIDGE DRIVER 5A 28TIQFN
Packaging: Cut Tape (CT)
Package / Case: 28-PowerTQFN
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 125°C (TJ)
Output Configuration: Half Bridge (3)
Voltage - Supply: 3V ~ 3.5V
Rds On (Typ): 200mOhm LS, 200mOhm HS
Applications: DC Motors, DC-DC Converters
Current - Output / Channel: 5A
Current - Peak Output: 14.1A
Technology: NMOS, PMOS
Voltage - Load: 5.5V ~ 12V
Supplier Device Package: PG-TIQFN-28-1
Load Type: Inductive, Capacitive, Resistive
Description: IC HALF BRIDGE DRIVER 5A 28TIQFN
Packaging: Cut Tape (CT)
Package / Case: 28-PowerTQFN
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 125°C (TJ)
Output Configuration: Half Bridge (3)
Voltage - Supply: 3V ~ 3.5V
Rds On (Typ): 200mOhm LS, 200mOhm HS
Applications: DC Motors, DC-DC Converters
Current - Output / Channel: 5A
Current - Peak Output: 14.1A
Technology: NMOS, PMOS
Voltage - Load: 5.5V ~ 12V
Supplier Device Package: PG-TIQFN-28-1
Load Type: Inductive, Capacitive, Resistive
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| IGI60F200A1LAUMA1 |
Hersteller: Infineon Technologies
Description: IC HALF BRIDGE DRIVER 21TIQFN
Packaging: Tape & Reel (TR)
Package / Case: 21-TQFN Exposed Pad
Mounting Type: Surface Mount
Output Configuration: Half Bridge
Rds On (Typ): 200mOhm
Applications: General Purpose
Supplier Device Package: PG-TIQFN-21-1
Description: IC HALF BRIDGE DRIVER 21TIQFN
Packaging: Tape & Reel (TR)
Package / Case: 21-TQFN Exposed Pad
Mounting Type: Surface Mount
Output Configuration: Half Bridge
Rds On (Typ): 200mOhm
Applications: General Purpose
Supplier Device Package: PG-TIQFN-21-1
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| IRG4PC40FPBF |
![]() |
Hersteller: Infineon Technologies
Description: IGBT 600V 49A TO-247AC
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 1.7V @ 15V, 27A
Supplier Device Package: TO-247AC
Td (on/off) @ 25°C: 26ns/240ns
Switching Energy: 370µJ (on), 1.81mJ (off)
Test Condition: 480V, 27A, 10Ohm, 15V
Gate Charge: 100 nC
Current - Collector (Ic) (Max): 49 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 200 A
Power - Max: 160 W
Description: IGBT 600V 49A TO-247AC
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 1.7V @ 15V, 27A
Supplier Device Package: TO-247AC
Td (on/off) @ 25°C: 26ns/240ns
Switching Energy: 370µJ (on), 1.81mJ (off)
Test Condition: 480V, 27A, 10Ohm, 15V
Gate Charge: 100 nC
Current - Collector (Ic) (Max): 49 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 200 A
Power - Max: 160 W
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| T501N70TOHXPSA1 |
![]() |
Hersteller: Infineon Technologies
Description: SCR MODULE 7KV 1000A TO-200AC
Packaging: Tray
Package / Case: TO-200AC
Mounting Type: Clamp On
Operating Temperature: -40°C ~ 125°C
Structure: Single
Current - Hold (Ih) (Max): 350 mA
Current - Gate Trigger (Igt) (Max): 350 mA
Current - Non Rep. Surge 50, 60Hz (Itsm): 13500A @ 50Hz
Number of SCRs, Diodes: 1 SCR
Current - On State (It (AV)) (Max): 890 A
Voltage - Gate Trigger (Vgt) (Max): 2.5 V
Current - On State (It (RMS)) (Max): 1000 A
Voltage - Off State: 7 kV
Description: SCR MODULE 7KV 1000A TO-200AC
Packaging: Tray
Package / Case: TO-200AC
Mounting Type: Clamp On
Operating Temperature: -40°C ~ 125°C
Structure: Single
Current - Hold (Ih) (Max): 350 mA
Current - Gate Trigger (Igt) (Max): 350 mA
Current - Non Rep. Surge 50, 60Hz (Itsm): 13500A @ 50Hz
Number of SCRs, Diodes: 1 SCR
Current - On State (It (AV)) (Max): 890 A
Voltage - Gate Trigger (Vgt) (Max): 2.5 V
Current - On State (It (RMS)) (Max): 1000 A
Voltage - Off State: 7 kV
auf Bestellung 4 Stücke:
Lieferzeit 10-14 Tag (e)| Anzahl | Preis |
|---|---|
| 1+ | 1552.55 EUR |
| CY7C64215-56LTXIT |
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Hersteller: Infineon Technologies
Description: MCU ENCORE 16K FLASH 56MHZ 56QFN
Packaging: Tape & Reel (TR)
Package / Case: 56-VFQFN Exposed Pad
Mounting Type: Surface Mount
Interface: I2C, USB
RAM Size: 1K x 8
Operating Temperature: -40°C ~ 85°C
Voltage - Supply: 3V ~ 5.25V
Controller Series: CY7C642xx
Program Memory Type: FLASH (16kB)
Applications: USB Microcontroller
Core Processor: M8C
Supplier Device Package: 56-QFN-EP (8x8)
Number of I/O: 50
DigiKey Programmable: Not Verified
Description: MCU ENCORE 16K FLASH 56MHZ 56QFN
Packaging: Tape & Reel (TR)
Package / Case: 56-VFQFN Exposed Pad
Mounting Type: Surface Mount
Interface: I2C, USB
RAM Size: 1K x 8
Operating Temperature: -40°C ~ 85°C
Voltage - Supply: 3V ~ 5.25V
Controller Series: CY7C642xx
Program Memory Type: FLASH (16kB)
Applications: USB Microcontroller
Core Processor: M8C
Supplier Device Package: 56-QFN-EP (8x8)
Number of I/O: 50
DigiKey Programmable: Not Verified
Produkt ist nicht verfügbar
Im Einkaufswagen
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| IDP2309XUMA1 |
auf Bestellung 2500 Stücke:
Lieferzeit 10-14 Tag (e)| Anzahl | Preis |
|---|---|
| 2500+ | 2.42 EUR |
| IDP2309XUMA1 |
auf Bestellung 2500 Stücke:
Lieferzeit 10-14 Tag (e)| Anzahl | Preis |
|---|---|
| 4+ | 4.98 EUR |
| 10+ | 4.18 EUR |
| 100+ | 3.38 EUR |
| 500+ | 3.01 EUR |
| 1000+ | 2.57 EUR |
| CYPD2134A-24LQXQ |
![]() |
Hersteller: Infineon Technologies
Description: TYPE-C - SMPS/LP
Packaging: Tray
Package / Case: 24-UFQFN Exposed Pad
Mounting Type: Surface Mount
Interface: I2C, SPI, UART/USART, USB
RAM Size: 4K x 8
Operating Temperature: -40°C ~ 105°C (TA)
Voltage - Supply: 1.71V ~ 5.5V
Controller Series: EZ-PD™
Program Memory Type: FLASH (32kB)
Applications: USB Type C
Core Processor: ARM® Cortex®-M0
Supplier Device Package: 24-QFN (4x4)
Number of I/O: 10
Description: TYPE-C - SMPS/LP
Packaging: Tray
Package / Case: 24-UFQFN Exposed Pad
Mounting Type: Surface Mount
Interface: I2C, SPI, UART/USART, USB
RAM Size: 4K x 8
Operating Temperature: -40°C ~ 105°C (TA)
Voltage - Supply: 1.71V ~ 5.5V
Controller Series: EZ-PD™
Program Memory Type: FLASH (32kB)
Applications: USB Type C
Core Processor: ARM® Cortex®-M0
Supplier Device Package: 24-QFN (4x4)
Number of I/O: 10
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| CYPD2134A-24LQXQT |
![]() |
Hersteller: Infineon Technologies
Description: TYPE-C - SMPS/LP
Packaging: Tape & Reel (TR)
Package / Case: 24-UFQFN Exposed Pad
Mounting Type: Surface Mount
Interface: I2C, SPI, UART/USART, USB
RAM Size: 4K x 8
Operating Temperature: -40°C ~ 105°C (TA)
Voltage - Supply: 1.71V ~ 5.5V
Controller Series: EZ-PD™
Program Memory Type: FLASH (32kB)
Applications: USB Type C
Core Processor: ARM® Cortex®-M0
Supplier Device Package: 24-QFN (4x4)
Number of I/O: 10
Description: TYPE-C - SMPS/LP
Packaging: Tape & Reel (TR)
Package / Case: 24-UFQFN Exposed Pad
Mounting Type: Surface Mount
Interface: I2C, SPI, UART/USART, USB
RAM Size: 4K x 8
Operating Temperature: -40°C ~ 105°C (TA)
Voltage - Supply: 1.71V ~ 5.5V
Controller Series: EZ-PD™
Program Memory Type: FLASH (32kB)
Applications: USB Type C
Core Processor: ARM® Cortex®-M0
Supplier Device Package: 24-QFN (4x4)
Number of I/O: 10
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| CYPDC1185B2-32LQXQ |
![]() |
Hersteller: Infineon Technologies
Description: TYPE-C - SMPS/LP
Packaging: Tray
Package / Case: 32-UFQFN Exposed Pad
Mounting Type: Surface Mount
Interface: I2C, SPI, UART/USART, USB
RAM Size: 8K x 8
Operating Temperature: -40°C ~ 105°C (TA)
Voltage - Supply: 2.7V ~ 5.5V
Controller Series: EZ-PD™
Program Memory Type: FLASH (128kB)
Applications: USB Type C
Core Processor: ARM® Cortex®-M0
Supplier Device Package: 32-QFN (5x5)
Number of I/O: 6
Description: TYPE-C - SMPS/LP
Packaging: Tray
Package / Case: 32-UFQFN Exposed Pad
Mounting Type: Surface Mount
Interface: I2C, SPI, UART/USART, USB
RAM Size: 8K x 8
Operating Temperature: -40°C ~ 105°C (TA)
Voltage - Supply: 2.7V ~ 5.5V
Controller Series: EZ-PD™
Program Memory Type: FLASH (128kB)
Applications: USB Type C
Core Processor: ARM® Cortex®-M0
Supplier Device Package: 32-QFN (5x5)
Number of I/O: 6
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| CYPDC1185B2-32LQXQT |
![]() |
Hersteller: Infineon Technologies
Description: TYPE-C - SMPS/LP
Packaging: Tape & Reel (TR)
Package / Case: 32-UFQFN Exposed Pad
Mounting Type: Surface Mount
Interface: I2C, SPI, UART/USART, USB
RAM Size: 8K x 8
Operating Temperature: -40°C ~ 105°C (TA)
Voltage - Supply: 2.7V ~ 5.5V
Controller Series: EZ-PD™
Program Memory Type: FLASH (128kB)
Applications: USB Type C
Core Processor: ARM® Cortex®-M0
Supplier Device Package: 32-QFN (5x5)
Number of I/O: 6
Description: TYPE-C - SMPS/LP
Packaging: Tape & Reel (TR)
Package / Case: 32-UFQFN Exposed Pad
Mounting Type: Surface Mount
Interface: I2C, SPI, UART/USART, USB
RAM Size: 8K x 8
Operating Temperature: -40°C ~ 105°C (TA)
Voltage - Supply: 2.7V ~ 5.5V
Controller Series: EZ-PD™
Program Memory Type: FLASH (128kB)
Applications: USB Type C
Core Processor: ARM® Cortex®-M0
Supplier Device Package: 32-QFN (5x5)
Number of I/O: 6
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| IRFR18N15DPBF | ![]() |
![]() |
Hersteller: Infineon Technologies
Description: MOSFET N-CH 150V 18A DPAK
Packaging: Tube
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 18A (Tc)
Rds On (Max) @ Id, Vgs: 125mOhm @ 11A, 10V
Power Dissipation (Max): 110W (Tc)
Vgs(th) (Max) @ Id: 5.5V @ 250µA
Supplier Device Package: TO-252AA (DPAK)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 150 V
Gate Charge (Qg) (Max) @ Vgs: 43 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 900 pF @ 25 V
Description: MOSFET N-CH 150V 18A DPAK
Packaging: Tube
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 18A (Tc)
Rds On (Max) @ Id, Vgs: 125mOhm @ 11A, 10V
Power Dissipation (Max): 110W (Tc)
Vgs(th) (Max) @ Id: 5.5V @ 250µA
Supplier Device Package: TO-252AA (DPAK)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 150 V
Gate Charge (Qg) (Max) @ Vgs: 43 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 900 pF @ 25 V
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| TLF35585QVS01XUMA1 |
![]() |
Hersteller: Infineon Technologies
Description: OPTIREG PMIC
Packaging: Tape & Reel (TR)
Package / Case: 48-VFQFN Exposed Pad
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 175°C (TJ)
Voltage - Supply: 3V ~ 40V
Applications: Engine Management
Supplier Device Package: PG-VQFN-48-79
Grade: Automotive
Qualification: AEC-Q100
Description: OPTIREG PMIC
Packaging: Tape & Reel (TR)
Package / Case: 48-VFQFN Exposed Pad
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 175°C (TJ)
Voltage - Supply: 3V ~ 40V
Applications: Engine Management
Supplier Device Package: PG-VQFN-48-79
Grade: Automotive
Qualification: AEC-Q100
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| TLF35585QVS02XUMA1 |
![]() |
Hersteller: Infineon Technologies
Description: OPTIREG PMIC
Packaging: Tape & Reel (TR)
Package / Case: 48-VFQFN Exposed Pad
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 175°C (TJ)
Voltage - Supply: 3V ~ 40V
Supplier Device Package: PG-VQFN-48-79
Grade: Automotive
Qualification: AEC-Q100
Description: OPTIREG PMIC
Packaging: Tape & Reel (TR)
Package / Case: 48-VFQFN Exposed Pad
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 175°C (TJ)
Voltage - Supply: 3V ~ 40V
Supplier Device Package: PG-VQFN-48-79
Grade: Automotive
Qualification: AEC-Q100
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| TLF35585QUS01XUMA1 |
![]() |
Hersteller: Infineon Technologies
Description: OPTIREG PMIC
Packaging: Tape & Reel (TR)
Package / Case: 48-TQFP Exposed Pad
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 175°C (TJ)
Voltage - Supply: 3V ~ 40V
Supplier Device Package: PG-TQFP-48-10
Grade: Automotive
Qualification: AEC-Q100
Description: OPTIREG PMIC
Packaging: Tape & Reel (TR)
Package / Case: 48-TQFP Exposed Pad
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 175°C (TJ)
Voltage - Supply: 3V ~ 40V
Supplier Device Package: PG-TQFP-48-10
Grade: Automotive
Qualification: AEC-Q100
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| TLF35585QUS02XUMA1 |
![]() |
Hersteller: Infineon Technologies
Description: OPTIREG PMIC
Packaging: Tape & Reel (TR)
Package / Case: 48-TQFP Exposed Pad
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 175°C (TJ)
Voltage - Supply: 3V ~ 40V
Supplier Device Package: PG-TQFP-48-10
Grade: Automotive
Qualification: AEC-Q100
Description: OPTIREG PMIC
Packaging: Tape & Reel (TR)
Package / Case: 48-TQFP Exposed Pad
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 175°C (TJ)
Voltage - Supply: 3V ~ 40V
Supplier Device Package: PG-TQFP-48-10
Grade: Automotive
Qualification: AEC-Q100
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| SFH756 |
![]() |
Hersteller: Infineon Technologies
Description: XMITTER FIBER OPTIC 660NM
Packaging: Tube
Wavelength: 660nm
Voltage - Forward (Vf) (Typ): 2.1V
Spectral Bandwidth: 25nm
Capacitance: 30 pF
Voltage - DC Reverse (Vr) (Max): 3 V
Current - DC Forward (If) (Max): 50 mA
Description: XMITTER FIBER OPTIC 660NM
Packaging: Tube
Wavelength: 660nm
Voltage - Forward (Vf) (Typ): 2.1V
Spectral Bandwidth: 25nm
Capacitance: 30 pF
Voltage - DC Reverse (Vr) (Max): 3 V
Current - DC Forward (If) (Max): 50 mA
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| IRF1010EPBF | ![]() |
![]() |
Hersteller: Infineon Technologies
Description: MOSFET N-CH 60V 84A TO220AB
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 84A (Tc)
Rds On (Max) @ Id, Vgs: 12mOhm @ 50A, 10V
Power Dissipation (Max): 200W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-220AB
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 130 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3210 pF @ 25 V
Description: MOSFET N-CH 60V 84A TO220AB
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 84A (Tc)
Rds On (Max) @ Id, Vgs: 12mOhm @ 50A, 10V
Power Dissipation (Max): 200W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-220AB
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 130 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3210 pF @ 25 V
auf Bestellung 713 Stücke:
Lieferzeit 10-14 Tag (e)| Anzahl | Preis |
|---|---|
| 13+ | 1.44 EUR |
| 50+ | 1.06 EUR |
| 100+ | 0.98 EUR |
| 500+ | 0.91 EUR |
| IRFR4105ZPBF | ![]() |
![]() |
Hersteller: Infineon Technologies
Description: MOSFET N-CH 55V 30A DPAK
Packaging: Tube
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 30A (Tc)
Rds On (Max) @ Id, Vgs: 24.5mOhm @ 18A, 10V
Power Dissipation (Max): 48W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-252AA (DPAK)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 55 V
Gate Charge (Qg) (Max) @ Vgs: 27 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 740 pF @ 25 V
Voltage Coupled to Gate Charge (Qg) (Max) @ Vgs: 10
Voltage Coupled to Input Capacitance (Ciss) (Max) @ Vds: 25
Description: MOSFET N-CH 55V 30A DPAK
Packaging: Tube
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 30A (Tc)
Rds On (Max) @ Id, Vgs: 24.5mOhm @ 18A, 10V
Power Dissipation (Max): 48W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-252AA (DPAK)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 55 V
Gate Charge (Qg) (Max) @ Vgs: 27 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 740 pF @ 25 V
Voltage Coupled to Gate Charge (Qg) (Max) @ Vgs: 10
Voltage Coupled to Input Capacitance (Ciss) (Max) @ Vds: 25
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| IRGP4063D1-EPBF |
![]() |
Hersteller: Infineon Technologies
Description: IGBT 600V 100A TO-247AD
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 175°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 80 ns
Vce(on) (Max) @ Vge, Ic: 2.14V @ 15V, 48A
Supplier Device Package: TO-247AD
Td (on/off) @ 25°C: 60ns/160ns
Switching Energy: 1.4mJ (on), 1.1mJ (off)
Test Condition: 400V, 48A, 10Ohm, 15V
Gate Charge: 150 nC
Current - Collector (Ic) (Max): 100 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 192 A
Power - Max: 330 W
Description: IGBT 600V 100A TO-247AD
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 175°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 80 ns
Vce(on) (Max) @ Vge, Ic: 2.14V @ 15V, 48A
Supplier Device Package: TO-247AD
Td (on/off) @ 25°C: 60ns/160ns
Switching Energy: 1.4mJ (on), 1.1mJ (off)
Test Condition: 400V, 48A, 10Ohm, 15V
Gate Charge: 150 nC
Current - Collector (Ic) (Max): 100 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 192 A
Power - Max: 330 W
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| IRGP4063D1PBF |
![]() |
Hersteller: Infineon Technologies
Description: IGBT 600V 100A TO-247AC
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 175°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 80 ns
Vce(on) (Max) @ Vge, Ic: 2.14V @ 15V, 48A
Supplier Device Package: TO-247AC
Td (on/off) @ 25°C: 60ns/160ns
Switching Energy: 1.4mJ (on), 1.1mJ (off)
Test Condition: 400V, 48A, 10Ohm, 15V
Gate Charge: 150 nC
Current - Collector (Ic) (Max): 100 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 192 A
Power - Max: 330 W
Description: IGBT 600V 100A TO-247AC
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 175°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 80 ns
Vce(on) (Max) @ Vge, Ic: 2.14V @ 15V, 48A
Supplier Device Package: TO-247AC
Td (on/off) @ 25°C: 60ns/160ns
Switching Energy: 1.4mJ (on), 1.1mJ (off)
Test Condition: 400V, 48A, 10Ohm, 15V
Gate Charge: 150 nC
Current - Collector (Ic) (Max): 100 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 192 A
Power - Max: 330 W
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| IRGP4063D-EPBF |
![]() |
Hersteller: Infineon Technologies
Description: IGBT TRENCH 600V 96A TO-247AD
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 115 ns
Vce(on) (Max) @ Vge, Ic: 2.14V @ 15V, 48A
Supplier Device Package: TO-247AD
IGBT Type: Trench
Td (on/off) @ 25°C: 60ns/145ns
Switching Energy: 625µJ (on), 1.28mJ (off)
Test Condition: 400V, 48A, 10Ohm, 15V
Gate Charge: 140 nC
Current - Collector (Ic) (Max): 96 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 200 A
Power - Max: 330 W
Description: IGBT TRENCH 600V 96A TO-247AD
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 115 ns
Vce(on) (Max) @ Vge, Ic: 2.14V @ 15V, 48A
Supplier Device Package: TO-247AD
IGBT Type: Trench
Td (on/off) @ 25°C: 60ns/145ns
Switching Energy: 625µJ (on), 1.28mJ (off)
Test Condition: 400V, 48A, 10Ohm, 15V
Gate Charge: 140 nC
Current - Collector (Ic) (Max): 96 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 200 A
Power - Max: 330 W
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| IRGP4062D-EPBF |
![]() |
Hersteller: Infineon Technologies
Description: IGBT TRENCH 600V 48A TO-247AD
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 89 ns
Vce(on) (Max) @ Vge, Ic: 1.95V @ 15V, 24A
Supplier Device Package: TO-247AD
IGBT Type: Trench
Td (on/off) @ 25°C: 41ns/104ns
Switching Energy: 115µJ (on), 600µJ (off)
Test Condition: 400V, 24A, 10Ohm, 15V
Gate Charge: 75 nC
Current - Collector (Ic) (Max): 48 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 72 A
Power - Max: 250 W
Description: IGBT TRENCH 600V 48A TO-247AD
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 89 ns
Vce(on) (Max) @ Vge, Ic: 1.95V @ 15V, 24A
Supplier Device Package: TO-247AD
IGBT Type: Trench
Td (on/off) @ 25°C: 41ns/104ns
Switching Energy: 115µJ (on), 600µJ (off)
Test Condition: 400V, 24A, 10Ohm, 15V
Gate Charge: 75 nC
Current - Collector (Ic) (Max): 48 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 72 A
Power - Max: 250 W
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| ESD121B1W0201E6327XTSA1 |
![]() |
Hersteller: Infineon Technologies
Description: TVS DIODE 7VWM 10VC PGWLL23
Packaging: Tape & Reel (TR)
Package / Case: 0201 (0603 Metric)
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 125°C (TA)
Applications: General Purpose
Capacitance @ Frequency: 0.2pF @ 1GHz
Current - Peak Pulse (10/1000µs): 2A (8/20µs)
Voltage - Reverse Standoff (Typ): 7V
Supplier Device Package: PG-WLL-2-3
Bidirectional Channels: 1
Voltage - Clamping (Max) @ Ipp: 10V (Typ)
Power - Peak Pulse: 24W
Power Line Protection: No
Description: TVS DIODE 7VWM 10VC PGWLL23
Packaging: Tape & Reel (TR)
Package / Case: 0201 (0603 Metric)
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 125°C (TA)
Applications: General Purpose
Capacitance @ Frequency: 0.2pF @ 1GHz
Current - Peak Pulse (10/1000µs): 2A (8/20µs)
Voltage - Reverse Standoff (Typ): 7V
Supplier Device Package: PG-WLL-2-3
Bidirectional Channels: 1
Voltage - Clamping (Max) @ Ipp: 10V (Typ)
Power - Peak Pulse: 24W
Power Line Protection: No
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| ESD121B1W0201E6327XTSA1 |
![]() |
Hersteller: Infineon Technologies
Description: TVS DIODE 7VWM 10VC PGWLL23
Packaging: Cut Tape (CT)
Package / Case: 0201 (0603 Metric)
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 125°C (TA)
Applications: General Purpose
Capacitance @ Frequency: 0.2pF @ 1GHz
Current - Peak Pulse (10/1000µs): 2A (8/20µs)
Voltage - Reverse Standoff (Typ): 7V
Supplier Device Package: PG-WLL-2-3
Bidirectional Channels: 1
Voltage - Clamping (Max) @ Ipp: 10V (Typ)
Power - Peak Pulse: 24W
Power Line Protection: No
Description: TVS DIODE 7VWM 10VC PGWLL23
Packaging: Cut Tape (CT)
Package / Case: 0201 (0603 Metric)
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 125°C (TA)
Applications: General Purpose
Capacitance @ Frequency: 0.2pF @ 1GHz
Current - Peak Pulse (10/1000µs): 2A (8/20µs)
Voltage - Reverse Standoff (Typ): 7V
Supplier Device Package: PG-WLL-2-3
Bidirectional Channels: 1
Voltage - Clamping (Max) @ Ipp: 10V (Typ)
Power - Peak Pulse: 24W
Power Line Protection: No
auf Bestellung 11800 Stücke:
Lieferzeit 10-14 Tag (e)| Anzahl | Preis |
|---|---|
| 72+ | 0.25 EUR |
| 103+ | 0.17 EUR |
| 219+ | 0.081 EUR |
| 500+ | 0.074 EUR |
| 1000+ | 0.067 EUR |
| 2000+ | 0.064 EUR |
| 5000+ | 0.059 EUR |
| BGT80E6327XTMA1 |
auf Bestellung 5175 Stücke:
Lieferzeit 10-14 Tag (e)| Anzahl | Preis |
|---|---|
| 5+ | 123.55 EUR |
| BGT80E6327XTSA1 |
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Hersteller: Infineon Technologies
Description: IC RF TXRX CELLULAR 119WFWLB
Packaging: Bulk
Package / Case: 119-WFBGA, WLBGA
Mounting Type: Surface Mount
Frequency: 71GHz ~ 86GHz
Type: TxRx Only
Voltage - Supply: 12V
Power - Output: 12dBm
Protocol: LTE, WiMax
Supplier Device Package: PG-WFWLB-119-1
GPIO: 24
Modulation: QPSK
RF Family/Standard: Cellular
Serial Interfaces: SPI
DigiKey Programmable: Not Verified
Description: IC RF TXRX CELLULAR 119WFWLB
Packaging: Bulk
Package / Case: 119-WFBGA, WLBGA
Mounting Type: Surface Mount
Frequency: 71GHz ~ 86GHz
Type: TxRx Only
Voltage - Supply: 12V
Power - Output: 12dBm
Protocol: LTE, WiMax
Supplier Device Package: PG-WFWLB-119-1
GPIO: 24
Modulation: QPSK
RF Family/Standard: Cellular
Serial Interfaces: SPI
DigiKey Programmable: Not Verified
auf Bestellung 9474 Stücke:
Lieferzeit 10-14 Tag (e)| Anzahl | Preis |
|---|---|
| 5+ | 118.28 EUR |
| IKY150N65EH7XKSA1 |
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Hersteller: Infineon Technologies
Description: IGBT TRENCH FS 650V 160A TO247-4
Packaging: Tube
Package / Case: TO-247-4
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 175°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 65 ns
Vce(on) (Max) @ Vge, Ic: 1.65V @ 15V, 150A
Supplier Device Package: PG-TO247-4-2
IGBT Type: Trench Field Stop
Td (on/off) @ 25°C: 44ns/343ns
Switching Energy: 2.3mJ (on), 2.9mJ (off)
Test Condition: 400V, 150A, 10Ohm, 15V
Gate Charge: 300 nC
Current - Collector (Ic) (Max): 160 A
Voltage - Collector Emitter Breakdown (Max): 650 V
Current - Collector Pulsed (Icm): 600 A
Power - Max: 621 W
Description: IGBT TRENCH FS 650V 160A TO247-4
Packaging: Tube
Package / Case: TO-247-4
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 175°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 65 ns
Vce(on) (Max) @ Vge, Ic: 1.65V @ 15V, 150A
Supplier Device Package: PG-TO247-4-2
IGBT Type: Trench Field Stop
Td (on/off) @ 25°C: 44ns/343ns
Switching Energy: 2.3mJ (on), 2.9mJ (off)
Test Condition: 400V, 150A, 10Ohm, 15V
Gate Charge: 300 nC
Current - Collector (Ic) (Max): 160 A
Voltage - Collector Emitter Breakdown (Max): 650 V
Current - Collector Pulsed (Icm): 600 A
Power - Max: 621 W
auf Bestellung 234 Stücke:
Lieferzeit 10-14 Tag (e)| Anzahl | Preis |
|---|---|
| 1+ | 19.27 EUR |
| 30+ | 11.65 EUR |
| 120+ | 9.98 EUR |
| IRGP30B120KD-EP |
![]() |
Hersteller: Infineon Technologies
Description: IGBT NPT 1200V 60A TO-247AD
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 300 ns
Vce(on) (Max) @ Vge, Ic: 4V @ 15V, 60A
Supplier Device Package: TO-247AD
IGBT Type: NPT
Switching Energy: 1.07mJ (on), 1.49mJ (off)
Test Condition: 600V, 25A, 5Ohm, 15V
Gate Charge: 169 nC
Current - Collector (Ic) (Max): 60 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Current - Collector Pulsed (Icm): 120 A
Power - Max: 300 W
Description: IGBT NPT 1200V 60A TO-247AD
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 300 ns
Vce(on) (Max) @ Vge, Ic: 4V @ 15V, 60A
Supplier Device Package: TO-247AD
IGBT Type: NPT
Switching Energy: 1.07mJ (on), 1.49mJ (off)
Test Condition: 600V, 25A, 5Ohm, 15V
Gate Charge: 169 nC
Current - Collector (Ic) (Max): 60 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Current - Collector Pulsed (Icm): 120 A
Power - Max: 300 W
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| SAK-XC2263N40F40LAAKXUMA1 |
![]() |
Hersteller: Infineon Technologies
Description: 16-BIT C166 MMC - XC2200 FAMILY
Packaging: Bulk
Package / Case: 100-LQFP Exposed Pad
Mounting Type: Surface Mount
Speed: 40MHz
Program Memory Size: 320KB (320K x 8)
RAM Size: 42K x 8
Operating Temperature: -40°C ~ 125°C (TA)
Oscillator Type: Internal
Program Memory Type: FLASH
Core Processor: C166SV2
Data Converters: A/D 16x10b
Core Size: 16/32-Bit
Voltage - Supply (Vcc/Vdd): 3V ~ 5.5V
Connectivity: CANbus, EBI/EMI, I²C, LINbus, SPI, SSC, UART/USART, USI
Peripherals: I²S, POR, PWM, WDT
Supplier Device Package: PG-LQFP-100-8
Number of I/O: 76
DigiKey Programmable: Not Verified
Description: 16-BIT C166 MMC - XC2200 FAMILY
Packaging: Bulk
Package / Case: 100-LQFP Exposed Pad
Mounting Type: Surface Mount
Speed: 40MHz
Program Memory Size: 320KB (320K x 8)
RAM Size: 42K x 8
Operating Temperature: -40°C ~ 125°C (TA)
Oscillator Type: Internal
Program Memory Type: FLASH
Core Processor: C166SV2
Data Converters: A/D 16x10b
Core Size: 16/32-Bit
Voltage - Supply (Vcc/Vdd): 3V ~ 5.5V
Connectivity: CANbus, EBI/EMI, I²C, LINbus, SPI, SSC, UART/USART, USI
Peripherals: I²S, POR, PWM, WDT
Supplier Device Package: PG-LQFP-100-8
Number of I/O: 76
DigiKey Programmable: Not Verified
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| SAF-XE164HM-72F80LAA |
![]() |
Hersteller: Infineon Technologies
Description: 16-BIT FLASH RISC MCU
Packaging: Bulk
Package / Case: 100-LQFP Exposed Pad
Mounting Type: Surface Mount
Speed: 80MHz
Program Memory Size: 576KB (576K x 8)
RAM Size: 50K x 8
Operating Temperature: -40°C ~ 85°C (TA)
Oscillator Type: Internal
Program Memory Type: FLASH
Core Processor: C166SV2
Data Converters: A/D 16x8b, 10b SAR
Core Size: 16-Bit
Voltage - Supply (Vcc/Vdd): 3V ~ 5.5V
Connectivity: EBI/EMI, I²C, LINbus, SPI, SSC, UART/USART, USI
Peripherals: I²S, POR, PWM, WDT
Supplier Device Package: PG-LQFP-100-3
Number of I/O: 76
DigiKey Programmable: Not Verified
Description: 16-BIT FLASH RISC MCU
Packaging: Bulk
Package / Case: 100-LQFP Exposed Pad
Mounting Type: Surface Mount
Speed: 80MHz
Program Memory Size: 576KB (576K x 8)
RAM Size: 50K x 8
Operating Temperature: -40°C ~ 85°C (TA)
Oscillator Type: Internal
Program Memory Type: FLASH
Core Processor: C166SV2
Data Converters: A/D 16x8b, 10b SAR
Core Size: 16-Bit
Voltage - Supply (Vcc/Vdd): 3V ~ 5.5V
Connectivity: EBI/EMI, I²C, LINbus, SPI, SSC, UART/USART, USI
Peripherals: I²S, POR, PWM, WDT
Supplier Device Package: PG-LQFP-100-3
Number of I/O: 76
DigiKey Programmable: Not Verified
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| IRGP50B60PD1PBF |
![]() |
Hersteller: Infineon Technologies
Description: IGBT NPT 600V 75A TO-247AC
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 42 ns
Vce(on) (Max) @ Vge, Ic: 2.85V @ 15V, 50A
Supplier Device Package: TO-247AC
IGBT Type: NPT
Td (on/off) @ 25°C: 30ns/130ns
Switching Energy: 255µJ (on), 375µJ (off)
Test Condition: 390V, 33A, 3.3Ohm, 15V
Gate Charge: 205 nC
Current - Collector (Ic) (Max): 75 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 150 A
Power - Max: 390 W
Description: IGBT NPT 600V 75A TO-247AC
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 42 ns
Vce(on) (Max) @ Vge, Ic: 2.85V @ 15V, 50A
Supplier Device Package: TO-247AC
IGBT Type: NPT
Td (on/off) @ 25°C: 30ns/130ns
Switching Energy: 255µJ (on), 375µJ (off)
Test Condition: 390V, 33A, 3.3Ohm, 15V
Gate Charge: 205 nC
Current - Collector (Ic) (Max): 75 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 150 A
Power - Max: 390 W
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| IRGP50B60PDPBF |
![]() |
Hersteller: Infineon Technologies
Description: IGBT NPT 600V 75A TO-247AC
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 50 ns
Vce(on) (Max) @ Vge, Ic: 2.6V @ 15V, 50A
Supplier Device Package: TO-247AC
IGBT Type: NPT
Td (on/off) @ 25°C: 34ns/130ns
Switching Energy: 360µJ (on), 380µJ (off)
Test Condition: 390V, 33A, 3.3Ohm, 15V
Gate Charge: 240 nC
Current - Collector (Ic) (Max): 75 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 150 A
Power - Max: 370 W
Description: IGBT NPT 600V 75A TO-247AC
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 50 ns
Vce(on) (Max) @ Vge, Ic: 2.6V @ 15V, 50A
Supplier Device Package: TO-247AC
IGBT Type: NPT
Td (on/off) @ 25°C: 34ns/130ns
Switching Energy: 360µJ (on), 380µJ (off)
Test Condition: 390V, 33A, 3.3Ohm, 15V
Gate Charge: 240 nC
Current - Collector (Ic) (Max): 75 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 150 A
Power - Max: 370 W
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| AUIRGP50B60PD1 |
![]() |
Hersteller: Infineon Technologies
Description: IGBT NPT 600V 75A TO-247AC
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 42 ns
Vce(on) (Max) @ Vge, Ic: 2.85V @ 15V, 50A
Supplier Device Package: TO-247AC
IGBT Type: NPT
Td (on/off) @ 25°C: 30ns/130ns
Switching Energy: 255µJ (on), 375µJ (off)
Test Condition: 390V, 33A, 3.3Ohm, 15V
Gate Charge: 205 nC
Current - Collector (Ic) (Max): 75 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 150 A
Power - Max: 390 W
Description: IGBT NPT 600V 75A TO-247AC
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 42 ns
Vce(on) (Max) @ Vge, Ic: 2.85V @ 15V, 50A
Supplier Device Package: TO-247AC
IGBT Type: NPT
Td (on/off) @ 25°C: 30ns/130ns
Switching Energy: 255µJ (on), 375µJ (off)
Test Condition: 390V, 33A, 3.3Ohm, 15V
Gate Charge: 205 nC
Current - Collector (Ic) (Max): 75 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 150 A
Power - Max: 390 W
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| IKQ50N120CT2XKSA1 |
![]() |
Hersteller: Infineon Technologies
Description: IGBT TRENCH FS 1200V 100A TO247
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 175°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 2.15V @ 15V, 50A
Supplier Device Package: PG-TO247-3-46
IGBT Type: Trench Field Stop
Td (on/off) @ 25°C: 34ns/312ns
Switching Energy: 3.8mJ (on), 3.3mJ (off)
Test Condition: 400V, 50A, 10Ohm, 15V
Gate Charge: 235 nC
Current - Collector (Ic) (Max): 100 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Current - Collector Pulsed (Icm): 200 A
Power - Max: 652 W
Description: IGBT TRENCH FS 1200V 100A TO247
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 175°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 2.15V @ 15V, 50A
Supplier Device Package: PG-TO247-3-46
IGBT Type: Trench Field Stop
Td (on/off) @ 25°C: 34ns/312ns
Switching Energy: 3.8mJ (on), 3.3mJ (off)
Test Condition: 400V, 50A, 10Ohm, 15V
Gate Charge: 235 nC
Current - Collector (Ic) (Max): 100 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Current - Collector Pulsed (Icm): 200 A
Power - Max: 652 W
auf Bestellung 1523 Stücke:
Lieferzeit 10-14 Tag (e)| Anzahl | Preis |
|---|---|
| 1+ | 20.06 EUR |
| 30+ | 12.09 EUR |
| 120+ | 10.34 EUR |
| 510+ | 9.86 EUR |
| IPD65R1K4C6ATMA1 |
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Hersteller: Infineon Technologies
Description: MOSFET N-CH 650V 3.2A TO252-3
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 3.2A (Tc)
Rds On (Max) @ Id, Vgs: 1.4Ohm @ 1A, 10V
Power Dissipation (Max): 28W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 100µA
Supplier Device Package: PG-TO252-3
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 10.5 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 225 pF @ 100 V
Description: MOSFET N-CH 650V 3.2A TO252-3
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 3.2A (Tc)
Rds On (Max) @ Id, Vgs: 1.4Ohm @ 1A, 10V
Power Dissipation (Max): 28W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 100µA
Supplier Device Package: PG-TO252-3
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 10.5 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 225 pF @ 100 V
auf Bestellung 10000 Stücke:
Lieferzeit 10-14 Tag (e)| Anzahl | Preis |
|---|---|
| 2500+ | 0.53 EUR |
| 5000+ | 0.49 EUR |
| 7500+ | 0.47 EUR |
| IPD65R1K4C6ATMA1 |
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Hersteller: Infineon Technologies
Description: MOSFET N-CH 650V 3.2A TO252-3
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 3.2A (Tc)
Rds On (Max) @ Id, Vgs: 1.4Ohm @ 1A, 10V
Power Dissipation (Max): 28W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 100µA
Supplier Device Package: PG-TO252-3
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 10.5 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 225 pF @ 100 V
Description: MOSFET N-CH 650V 3.2A TO252-3
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 3.2A (Tc)
Rds On (Max) @ Id, Vgs: 1.4Ohm @ 1A, 10V
Power Dissipation (Max): 28W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 100µA
Supplier Device Package: PG-TO252-3
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 10.5 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 225 pF @ 100 V
auf Bestellung 12335 Stücke:
Lieferzeit 10-14 Tag (e)| Anzahl | Preis |
|---|---|
| 9+ | 2.06 EUR |
| 14+ | 1.31 EUR |
| 100+ | 0.87 EUR |
| 500+ | 0.68 EUR |
| 1000+ | 0.61 EUR |
| IPD65R420CFDAATMA1 |
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Hersteller: Infineon Technologies
Description: MOSFET N-CH 650V 8.7A TO252-3
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 8.7A (Tc)
Rds On (Max) @ Id, Vgs: 420mOhm @ 3.4A, 10V
Power Dissipation (Max): 83.3W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 345µA
Supplier Device Package: PG-TO252-3
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 32 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 870 pF @ 100 V
Qualification: AEC-Q101
Description: MOSFET N-CH 650V 8.7A TO252-3
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 8.7A (Tc)
Rds On (Max) @ Id, Vgs: 420mOhm @ 3.4A, 10V
Power Dissipation (Max): 83.3W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 345µA
Supplier Device Package: PG-TO252-3
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 32 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 870 pF @ 100 V
Qualification: AEC-Q101
auf Bestellung 1919 Stücke:
Lieferzeit 10-14 Tag (e)| Anzahl | Preis |
|---|---|
| 5+ | 4.03 EUR |
| 10+ | 2.6 EUR |
| 100+ | 1.78 EUR |
| 500+ | 1.44 EUR |



































