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MCO600-22io1 MCO600-22io1 IXYS Littelfuse-Power-Semiconductors-MCO600-22io1-Datasheet?assetguid=513E57AB-C4CD-4D86-994B-0EA2FF79457F Description: SCR MODULE 2.2KV 928A Y1-CU
Packaging: Box
Package / Case: Y1-CU
Mounting Type: Chassis Mount
Operating Temperature: -40°C ~ 140°C (TJ)
Structure: Single
Current - Hold (Ih) (Max): 300 mA
Current - Gate Trigger (Igt) (Max): 300 mA
Current - Non Rep. Surge 50, 60Hz (Itsm): 15000A, 16000A
Number of SCRs, Diodes: 1 SCR
Current - On State (It (AV)) (Max): 600 A
Voltage - Gate Trigger (Vgt) (Max): 2 V
Current - On State (It (RMS)) (Max): 928 A
Voltage - Off State: 2.2 kV
Produkt ist nicht verfügbar
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MDA72-08N1B MDA72-08N1B IXYS MDD72,%20MDA72.pdf Description: DIODE MODULE 800V 113A TO240AA
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MDA72-14N1B MDA72-14N1B IXYS MDD72,%20MDA72.pdf Description: DIODE MODULE 1.4KV 113A TO240AA
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MDD142-08N1 IXYS MDD142-08N1.pdf Description: DIODE MODULE 800V 165A Y4-M6
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MDD142-12N1 IXYS MDD142-12N1.pdf Description: DIODE MODULE GP 1200V 165A Y4-M6
Packaging: Box
Package / Case: Y4-M6
Mounting Type: Chassis Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard
Diode Configuration: 1 Pair Series Connection
Current - Average Rectified (Io) (per Diode): 165A
Supplier Device Package: Y4-M6
Operating Temperature - Junction: -40°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 1200 V
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 300 A
Current - Reverse Leakage @ Vr: 20 mA @ 1200 V
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MDD142-14N1 IXYS MDD142-14N1.pdf Description: DIODE MODULE 1.4KV 165A Y4-M6
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MDD142-16N1 MDD142-16N1 IXYS Littelfuse-Power-Semiconductors-MDD142-16N1-Datasheet?assetguid=3222FCB2-82F4-4AD5-B2B5-DD3FC8D3799E Description: DIODE MODULE GP 1600V 165A Y4-M6
Packaging: Box
Package / Case: Y4-M6
Mounting Type: Chassis Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard
Diode Configuration: 1 Pair Series Connection
Current - Average Rectified (Io) (per Diode): 165A
Supplier Device Package: Y4-M6
Operating Temperature - Junction: -40°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 1600 V
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 300 A
Current - Reverse Leakage @ Vr: 20 mA @ 1600 V
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MDD142-18N1 IXYS MDD142-18N1.pdf Description: DIODE MODULE 1.8KV 165A Y4-M6
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MDD172-08N1 MDD172-08N1 IXYS MDD172.pdf Description: DIODE MODULE 800V 190A Y4-M6
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MDD172-14N1 MDD172-14N1 IXYS MDD172.pdf Description: DIODE MODULE 1.4KV 190A Y4-M6
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MDD172-16N1 MDD172-16N1 IXYS Littelfuse-Power-Semiconductors-MDD172-16N1-Datasheet?assetguid=5CAB1B92-563C-4402-B56D-2490381D3772 Description: DIODE MODULE GP 1600V 190A Y4-M6
Packaging: Box
Package / Case: Y4-M6
Mounting Type: Chassis Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard
Diode Configuration: 1 Pair Series Connection
Current - Average Rectified (Io) (per Diode): 190A
Supplier Device Package: Y4-M6
Operating Temperature - Junction: -40°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 1600 V
Voltage - Forward (Vf) (Max) @ If: 1.15 V @ 300 A
Current - Reverse Leakage @ Vr: 20 mA @ 1600 V
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MDD172-18N1 MDD172-18N1 IXYS MDD172.pdf Description: DIODE MODULE 1.8KV 190A Y4-M6
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MDD200-14N1 MDD200-14N1 IXYS MDD200-14N1.pdf Description: DIODE MODULE GP 1400V 224A Y4-M6
Packaging: Box
Package / Case: Y4-M6
Mounting Type: Chassis Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard
Diode Configuration: 1 Pair Series Connection
Current - Average Rectified (Io) (per Diode): 224A
Supplier Device Package: Y4-M6
Operating Temperature - Junction: -40°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 1400 V
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 300 A
Current - Reverse Leakage @ Vr: 20 mA @ 1400 V
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MDD200-16N1 MDD200-16N1 IXYS MDD200-16N1.pdf Description: DIODE MODULE GP 1600V 224A Y4-M6
Packaging: Box
Package / Case: Y4-M6
Mounting Type: Chassis Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard
Diode Configuration: 1 Pair Series Connection
Current - Average Rectified (Io) (per Diode): 224A
Supplier Device Package: Y4-M6
Operating Temperature - Junction: -40°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 1600 V
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 300 A
Current - Reverse Leakage @ Vr: 20 mA @ 1600 V
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MDD200-18N1 MDD200-18N1 IXYS MDD200-18N1.pdf Description: DIODE MODULE GP 1800V 224A Y4-M6
Packaging: Box
Package / Case: Y4-M6
Mounting Type: Chassis Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard
Diode Configuration: 1 Pair Series Connection
Current - Average Rectified (Io) (per Diode): 224A
Supplier Device Package: Y4-M6
Operating Temperature - Junction: -40°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 1800 V
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 300 A
Current - Reverse Leakage @ Vr: 20 mA @ 1800 V
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MDD220-08N1 IXYS MDD220.pdf Description: DIODE MODULE GP 800V 270A Y2-DCB
Current - Reverse Leakage @ Vr: 40 mA @ 800 V
Voltage - Forward (Vf) (Max) @ If: 1.4 V @ 600 A
Voltage - DC Reverse (Vr) (Max): 800 V
Part Status: Active
Operating Temperature - Junction: -40°C ~ 150°C
Supplier Device Package: Y2-DCB
Current - Average Rectified (Io) (per Diode): 270A
Diode Configuration: 1 Pair Series Connection
Technology: Standard
Speed: Standard Recovery >500ns, > 200mA (Io)
Mounting Type: Chassis Mount
Package / Case: Y2-DCB
Packaging: Box
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MDD220-12N1 IXYS MDD220.pdf Description: DIODE MOD GP 1.2KV 270A Y2-DCB
Current - Reverse Leakage @ Vr: 40 mA @ 1200 V
Voltage - Forward (Vf) (Max) @ If: 1.4 V @ 600 A
Voltage - DC Reverse (Vr) (Max): 1200 V
Operating Temperature - Junction: -40°C ~ 150°C
Supplier Device Package: Y2-DCB
Current - Average Rectified (Io) (per Diode): 270A
Diode Configuration: 1 Pair Series Connection
Technology: Standard
Speed: Standard Recovery >500ns, > 200mA (Io)
Mounting Type: Chassis Mount
Package / Case: Y2-DCB
Packaging: Box
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MDD220-14N1 IXYS MDD220.pdf Description: DIODE MOD GP 1.4KV 270A Y2-DCB
Current - Reverse Leakage @ Vr: 40 mA @ 1400 V
Voltage - Forward (Vf) (Max) @ If: 1.4 V @ 600 A
Voltage - DC Reverse (Vr) (Max): 1400 V
Operating Temperature - Junction: -40°C ~ 150°C
Supplier Device Package: Y2-DCB
Current - Average Rectified (Io) (per Diode): 270A
Diode Configuration: 1 Pair Series Connection
Technology: Standard
Speed: Standard Recovery >500ns, > 200mA (Io)
Mounting Type: Chassis Mount
Package / Case: Y2-DCB
Packaging: Box
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MDD220-16N1 IXYS MDD220.pdf Description: DIODE MOD GP 1.6KV 270A Y2-DCB
Current - Reverse Leakage @ Vr: 40 mA @ 1600 V
Voltage - Forward (Vf) (Max) @ If: 1.4 V @ 600 A
Voltage - DC Reverse (Vr) (Max): 1600 V
Operating Temperature - Junction: -40°C ~ 150°C
Supplier Device Package: Y2-DCB
Current - Average Rectified (Io) (per Diode): 270A
Diode Configuration: 1 Pair Series Connection
Technology: Standard
Speed: Standard Recovery >500ns, > 200mA (Io)
Mounting Type: Chassis Mount
Package / Case: Y2-DCB
Packaging: Box
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MDD220-18N1 IXYS MDD220.pdf Description: DIODE MOD GP 1800V 270A Y2-DCB
Speed: Standard Recovery >500ns, > 200mA (Io)
Mounting Type: Chassis Mount
Package / Case: Y2-DCB
Packaging: Box
Current - Reverse Leakage @ Vr: 40 mA @ 1800 V
Voltage - Forward (Vf) (Max) @ If: 1.4 V @ 600 A
Voltage - DC Reverse (Vr) (Max): 1800 V
Operating Temperature - Junction: -40°C ~ 150°C
Supplier Device Package: Y2-DCB
Current - Average Rectified (Io) (per Diode): 270A
Diode Configuration: 1 Pair Series Connection
Technology: Standard
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MDD250-08N1 IXYS MDD250.pdf Description: DIODE MODULE 800V 290A Y2-DCB
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MDD250-12N1 IXYS Description: DIODE MOD GP 1.2KV 290A Y2-DCB
Current - Reverse Leakage @ Vr: 40 mA @ 1200 V
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 600 A
Voltage - DC Reverse (Vr) (Max): 1200 V
Operating Temperature - Junction: -40°C ~ 150°C
Supplier Device Package: Y2-DCB
Current - Average Rectified (Io) (per Diode): 290A
Diode Configuration: 1 Pair Series Connection
Technology: Standard
Speed: Standard Recovery >500ns, > 200mA (Io)
Mounting Type: Chassis Mount
Package / Case: Y2-DCB
Packaging: Box
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MDD250-14N1 IXYS MDD250.pdf Description: DIODE MODULE 1.4KV 290A Y2-DCB
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MDD250-16N1 IXYS MDD250.pdf Description: DIODE MODULE 1.6KV 290A Y2-DCB
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MDD255-12N1 MDD255-12N1 IXYS media?resourcetype=datasheets&itemid=8F2E4C04-244A-4482-B217-CEFD0C2B8D03&filename=Littelfuse-Power-Semiconductors-MDD255-12N1-Datasheet Description: DIODE MODULE GP 1200V 270A Y1-CU
Current - Reverse Leakage @ Vr: 30 mA @ 1200 V
Voltage - Forward (Vf) (Max) @ If: 1.4 V @ 600 A
Voltage - DC Reverse (Vr) (Max): 1200 V
Operating Temperature - Junction: -40°C ~ 150°C
Supplier Device Package: Y1-CU
Current - Average Rectified (Io) (per Diode): 270A
Diode Configuration: 1 Pair Series Connection
Technology: Standard
Speed: Standard Recovery >500ns, > 200mA (Io)
Mounting Type: Chassis Mount
Package / Case: Y1-CU
Packaging: Box
Produkt ist nicht verfügbar
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MDD255-14N1 MDD255-14N1 IXYS Littelfuse-Power-Semiconductors-MDD255-14N1-Datasheet?assetguid=567345C0-127B-4813-9F4B-CF265C4DE74D Description: DIODE MODULE GP 1400V 270A Y1-CU
Current - Reverse Leakage @ Vr: 30 mA @ 1400 V
Voltage - Forward (Vf) (Max) @ If: 1.4 V @ 600 A
Voltage - DC Reverse (Vr) (Max): 1400 V
Operating Temperature - Junction: -40°C ~ 150°C
Supplier Device Package: Y1-CU
Current - Average Rectified (Io) (per Diode): 270A
Diode Configuration: 1 Pair Series Connection
Technology: Standard
Speed: Standard Recovery >500ns, > 200mA (Io)
Mounting Type: Chassis Mount
Package / Case: Y1-CU
Packaging: Box
Produkt ist nicht verfügbar
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MDD255-16N1 MDD255-16N1 IXYS media?resourcetype=datasheets&itemid=01C6678D-C745-4B36-AD3B-239753D33AEA&filename=Littelfuse-Power-Semiconductors-MDD255-16N1-Datasheet Description: DIODE MODULE GP 1600V 270A Y1-CU
Current - Reverse Leakage @ Vr: 30 mA @ 1600 V
Voltage - Forward (Vf) (Max) @ If: 1.4 V @ 600 A
Voltage - DC Reverse (Vr) (Max): 1600 V
Operating Temperature - Junction: -40°C ~ 150°C
Supplier Device Package: Y1-CU
Current - Average Rectified (Io) (per Diode): 270A
Diode Configuration: 1 Pair Series Connection
Technology: Standard
Speed: Standard Recovery >500ns, > 200mA (Io)
Mounting Type: Chassis Mount
Package / Case: Y1-CU
Packaging: Box
auf Bestellung 3 Stücke:
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MDD255-18N1 IXYS media?resourcetype=datasheets&itemid=3264DC63-47B9-4124-9137-7C3F9A66247B&filename=Littelfuse-Power-Semiconductors-MDD255-18N1-Datasheet Description: DIODE MODULE GP 1800V 270A Y1-CU
Current - Reverse Leakage @ Vr: 30 mA @ 1800 V
Voltage - Forward (Vf) (Max) @ If: 1.4 V @ 600 A
Voltage - DC Reverse (Vr) (Max): 1800 V
Operating Temperature - Junction: -40°C ~ 150°C
Supplier Device Package: Y1-CU
Current - Average Rectified (Io) (per Diode): 270A
Diode Configuration: 1 Pair Series Connection
Technology: Standard
Speed: Standard Recovery >500ns, > 200mA (Io)
Mounting Type: Chassis Mount
Package / Case: Y1-CU
Packaging: Box
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MDD255-20N1 IXYS media?resourcetype=datasheets&itemid=1CB2149A-671B-402D-AF9A-E6290574C9B6&filename=Littelfuse-Power-Semiconductors-MDD255-20N1-Datasheet Description: DIODE MODULE GP 2000V 270A Y1-CU
Current - Reverse Leakage @ Vr: 30 mA @ 2000 V
Voltage - Forward (Vf) (Max) @ If: 1.4 V @ 600 A
Voltage - DC Reverse (Vr) (Max): 2000 V
Operating Temperature - Junction: -40°C ~ 150°C
Supplier Device Package: Y1-CU
Current - Average Rectified (Io) (per Diode): 270A
Diode Configuration: 1 Pair Series Connection
Technology: Standard
Speed: Standard Recovery >500ns, > 200mA (Io)
Mounting Type: Chassis Mount
Package / Case: Y1-CU
Packaging: Box
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MDD255-22N1 MDD255-22N1 IXYS media?resourcetype=datasheets&itemid=D396DFBE-7F86-4634-A5CD-A3ABCB546C2E&filename=Littelfuse-Power-Semiconductors-MDD255-22N1-Datasheet Description: DIODE MODULE GP 2200V 270A Y1-CU
Operating Temperature - Junction: -40°C ~ 150°C
Supplier Device Package: Y1-CU
Current - Average Rectified (Io) (per Diode): 270A
Diode Configuration: 1 Pair Series Connection
Technology: Standard
Speed: Standard Recovery >500ns, > 200mA (Io)
Mounting Type: Chassis Mount
Package / Case: Y1-CU
Packaging: Box
Current - Reverse Leakage @ Vr: 30 mA @ 2200 V
Voltage - Forward (Vf) (Max) @ If: 1.4 V @ 600 A
Voltage - DC Reverse (Vr) (Max): 2200 V
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MDD26-12N1B MDD26-12N1B IXYS MDD26-12N1B.pdf Description: DIODE MODULE 1.2KV 36A TO240AA
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MDD310-08N1 IXYS MDD310-08N1.pdf Description: DIODE MODULE GP 800V 305A Y2-DCB
Current - Reverse Leakage @ Vr: 40 mA @ 800 V
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 600 A
Voltage - DC Reverse (Vr) (Max): 800 V
Operating Temperature - Junction: -40°C ~ 150°C
Supplier Device Package: Y2-DCB
Current - Average Rectified (Io) (per Diode): 305A
Diode Configuration: 1 Pair Series Connection
Technology: Standard
Speed: Standard Recovery >500ns, > 200mA (Io)
Mounting Type: Chassis Mount
Package / Case: Y2-DCB
Packaging: Box
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MDD310-12N1 IXYS MDD310.pdf Description: DIODE MOD GP 1.2KV 305A Y2-DCB
Packaging: Box
Package / Case: Y2-DCB
Mounting Type: Chassis Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard
Diode Configuration: 1 Pair Series Connection
Current - Average Rectified (Io) (per Diode): 305A
Supplier Device Package: Y2-DCB
Operating Temperature - Junction: -40°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 1200 V
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 600 A
Current - Reverse Leakage @ Vr: 40 mA @ 1200 V
Produkt ist nicht verfügbar
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MDD310-14N1 IXYS MDD310.pdf Description: DIODE MOD GP 1.4KV 305A Y2-DCB
Packaging: Box
Package / Case: Y2-DCB
Mounting Type: Chassis Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard
Diode Configuration: 1 Pair Series Connection
Current - Average Rectified (Io) (per Diode): 305A
Supplier Device Package: Y2-DCB
Operating Temperature - Junction: -40°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 1400 V
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 600 A
Current - Reverse Leakage @ Vr: 40 mA @ 1400 V
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MDD310-16N1 MDD310-16N1 IXYS MDD310.pdf Description: DIODE MOD GP 1.6KV 305A Y2-DCB
Packaging: Box
Package / Case: Y2-DCB
Mounting Type: Chassis Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard
Diode Configuration: 1 Pair Series Connection
Current - Average Rectified (Io) (per Diode): 305A
Supplier Device Package: Y2-DCB
Operating Temperature - Junction: -40°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 1600 V
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 600 A
Current - Reverse Leakage @ Vr: 40 mA @ 1600 V
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MDD310-18N1 IXYS MDD310.pdf Description: DIODE MOD GP 1800V 305A Y2-DCB
Packaging: Box
Package / Case: Y2-DCB
Mounting Type: Chassis Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard
Diode Configuration: 1 Pair Series Connection
Current - Average Rectified (Io) (per Diode): 305A
Supplier Device Package: Y2-DCB
Operating Temperature - Junction: -40°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 1800 V
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 600 A
Current - Reverse Leakage @ Vr: 40 mA @ 1800 V
Produkt ist nicht verfügbar
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MDD310-20N1 IXYS MDD310.pdf Description: DIODE MOD GP 2000V 305A Y2-DCB
Packaging: Box
Package / Case: Y2-DCB
Mounting Type: Chassis Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard
Diode Configuration: 1 Pair Series Connection
Current - Average Rectified (Io) (per Diode): 305A
Supplier Device Package: Y2-DCB
Operating Temperature - Junction: -40°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 2000 V
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 600 A
Current - Reverse Leakage @ Vr: 40 mA @ 2000 V
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MDD310-22N1 IXYS MDD310.pdf Description: DIODE MOD GP 2.2KV 305A Y2-DCB
Packaging: Box
Package / Case: Y2-DCB
Mounting Type: Chassis Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard
Diode Configuration: 1 Pair Series Connection
Current - Average Rectified (Io) (per Diode): 305A
Supplier Device Package: Y2-DCB
Operating Temperature - Junction: -40°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 2200 V
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 600 A
Current - Reverse Leakage @ Vr: 40 mA @ 2200 V
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MDD312-12N1 IXYS IXYS_Selectorguide_2015.pdf#page=97 Description: DIODE MODULE 1.2KV 310A Y1-CU
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MDD312-14N1 IXYS MDD312.pdf Description: DIODE MODULE 1.4KV 310A Y1-CU
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MDD312-16N1 MDD312-16N1 IXYS MDD312-16N1.pdf Description: DIODE MODULE 1.6KV 310A Y1-CU
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MDD312-18N1 MDD312-18N1 IXYS media?resourcetype=datasheets&itemid=0ACDE308-88D3-49A9-8989-1A524615D7B5&filename=Littelfuse-Power-Semiconductors-MDD312-18N1-Datasheet Description: DIODE MODULE GP 1800V 310A Y1-CU
Current - Reverse Leakage @ Vr: 30 mA @ 1800 V
Voltage - Forward (Vf) (Max) @ If: 1.32 V @ 600 A
Voltage - DC Reverse (Vr) (Max): 1800 V
Operating Temperature - Junction: -40°C ~ 150°C
Supplier Device Package: Y1-CU
Current - Average Rectified (Io) (per Diode): 310A
Diode Configuration: 1 Pair Series Connection
Technology: Standard
Speed: Standard Recovery >500ns, > 200mA (Io)
Mounting Type: Chassis Mount
Package / Case: Y1-CU
Packaging: Box
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MDD312-20N1 IXYS MDD312-20N1.pdf Description: DIODE MODULE 2KV 310A Y1-CU
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MDD312-22N1 MDD312-22N1 IXYS MDD312.pdf Description: DIODE MODULE 2.2KV 310A Y1-CU
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MDD600-12N1 IXYS MDx600.pdf Description: DIODE MODULE GP 1200V 600A WC500
Current - Reverse Leakage @ Vr: 50 mA @ 1200 V
Voltage - Forward (Vf) (Max) @ If: 880 mV @ 500 A
Voltage - DC Reverse (Vr) (Max): 1200 V
Operating Temperature - Junction: -40°C ~ 150°C
Supplier Device Package: WC-500
Current - Average Rectified (Io) (per Diode): 600A
Diode Configuration: 1 Pair Series Connection
Technology: Standard
Speed: Standard Recovery >500ns, > 200mA (Io)
Mounting Type: Chassis Mount
Package / Case: WC-500
Packaging: Box
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MDD600-16N1 IXYS MDx600.pdf Description: DIODE MODULE GP 1600V 600A WC500
Package / Case: WC-500
Packaging: Box
Current - Reverse Leakage @ Vr: 50 mA @ 1600 V
Voltage - Forward (Vf) (Max) @ If: 880 mV @ 500 A
Voltage - DC Reverse (Vr) (Max): 1600 V
Operating Temperature - Junction: -40°C ~ 150°C
Supplier Device Package: WC-500
Current - Average Rectified (Io) (per Diode): 600A
Diode Configuration: 1 Pair Series Connection
Technology: Standard
Speed: Standard Recovery >500ns, > 200mA (Io)
Mounting Type: Chassis Mount
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MDD600-18N1 IXYS MDx600.pdf Description: DIODE MODULE GP 1800V 600A WC500
Current - Reverse Leakage @ Vr: 50 mA @ 1800 V
Voltage - Forward (Vf) (Max) @ If: 880 mV @ 500 A
Voltage - DC Reverse (Vr) (Max): 1800 V
Operating Temperature - Junction: -40°C ~ 150°C
Supplier Device Package: WC-500
Current - Average Rectified (Io) (per Diode): 600A
Diode Configuration: 1 Pair Series Connection
Technology: Standard
Speed: Standard Recovery >500ns, > 200mA (Io)
Mounting Type: Chassis Mount
Package / Case: WC-500
Packaging: Box
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MDI100-12A3 IXYS Description: IGBT MODULE 1200V 135A 560W Y4M5
Input Capacitance (Cies) @ Vce: 5.5 nF @ 25 V
Current - Collector Cutoff (Max): 5 mA
Power - Max: 560 W
Voltage - Collector Emitter Breakdown (Max): 1200 V
Current - Collector (Ic) (Max): 135 A
IGBT Type: NPT
Supplier Device Package: Y4-M5
NTC Thermistor: No
Vce(on) (Max) @ Vge, Ic: 2.7V @ 15V, 75A
Operating Temperature: -40°C ~ 150°C (TJ)
Configuration: Single
Input: Standard
Mounting Type: Chassis Mount
Package / Case: Y4-M5
Packaging: Box
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MDI145-12A3 MDI145-12A3 IXYS Description: IGBT MOD 1200V 160A 700W Y4-M5
Packaging: Box
Package / Case: Y4-M5
Mounting Type: Chassis Mount
Input: Standard
Configuration: Single
Operating Temperature: -40°C ~ 150°C (TJ)
Vce(on) (Max) @ Vge, Ic: 2.7V @ 15V, 100A
NTC Thermistor: No
Supplier Device Package: Y4-M5
IGBT Type: NPT
Current - Collector (Ic) (Max): 160 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Power - Max: 700 W
Current - Collector Cutoff (Max): 6 mA
Input Capacitance (Cies) @ Vce: 6.5 nF @ 25 V
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MDI150-12A4 IXYS MII150-12A4_MID150-12A4_MDI150-12A4.pdf Description: IGBT MOD 1200V 180A 760W Y3DCB
Input Capacitance (Cies) @ Vce: 6.6 nF @ 25 V
Current - Collector Cutoff (Max): 7.5 mA
Power - Max: 760 W
Voltage - Collector Emitter Breakdown (Max): 1200 V
Current - Collector (Ic) (Max): 180 A
Part Status: Active
IGBT Type: NPT
Supplier Device Package: Y3-DCB
NTC Thermistor: No
Vce(on) (Max) @ Vge, Ic: 2.7V @ 15V, 100A
Operating Temperature: 150°C (TJ)
Configuration: Single
Input: Standard
Mounting Type: Chassis Mount
Package / Case: Y3-DCB
Packaging: Box
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MDI200-12A4 IXYS Description: IGBT MOD 1200V 270A 1130W Y3-DCB
Packaging: Box
Package / Case: Y3-DCB
Mounting Type: Chassis Mount
Input: Standard
Configuration: Single
Operating Temperature: 150°C (TJ)
Vce(on) (Max) @ Vge, Ic: 2.7V @ 15V, 150A
NTC Thermistor: No
Supplier Device Package: Y3-DCB
IGBT Type: NPT
Current - Collector (Ic) (Max): 270 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Power - Max: 1130 W
Current - Collector Cutoff (Max): 10 mA
Input Capacitance (Cies) @ Vce: 11 nF @ 25 V
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MDI300-12A4 IXYS Description: IGBT MOD 1200V 330A 1380W Y3-DCB
Packaging: Box
Package / Case: Y3-DCB
Mounting Type: Chassis Mount
Input: Standard
Configuration: Single
Operating Temperature: -40°C ~ 150°C (TJ)
Vce(on) (Max) @ Vge, Ic: 2.7V @ 15V, 200A
NTC Thermistor: No
Supplier Device Package: Y3-DCB
IGBT Type: NPT
Part Status: Obsolete
Current - Collector (Ic) (Max): 330 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Power - Max: 1380 W
Current - Collector Cutoff (Max): 13 mA
Input Capacitance (Cies) @ Vce: 13 nF @ 25 V
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MDI400-12E4 IXYS MII400-12E4_MID400-12E4%28T%29_MDI400-12E4.pdf Description: IGBT MOD 1200V 420A 1700W Y3LI
Packaging: Box
Package / Case: Y3-Li
Mounting Type: Chassis Mount
Input: Standard
Configuration: Single
Operating Temperature: -40°C ~ 150°C (TJ)
Vce(on) (Max) @ Vge, Ic: 2.8V @ 15V, 300A
NTC Thermistor: No
Supplier Device Package: Y3-Li
IGBT Type: NPT
Current - Collector (Ic) (Max): 420 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Power - Max: 1700 W
Current - Collector Cutoff (Max): 3.3 mA
Input Capacitance (Cies) @ Vce: 17 nF @ 25 V
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MDI550-12A4 IXYS Description: IGBT MOD 1200V 670A 2750W Y3DCB
Packaging: Box
Package / Case: Y3-DCB
Mounting Type: Chassis Mount
Input: Standard
Configuration: Single
Operating Temperature: 150°C (TJ)
Vce(on) (Max) @ Vge, Ic: 2.8V @ 15V, 400A
NTC Thermistor: No
Supplier Device Package: Y3-DCB
IGBT Type: NPT
Current - Collector (Ic) (Max): 670 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Power - Max: 2750 W
Current - Collector Cutoff (Max): 21 mA
Input Capacitance (Cies) @ Vce: 26 nF @ 25 V
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MDI75-12A3 IXYS Description: IGBT MODULE 1200V 90A 370W Y4M5
Packaging: Box
Package / Case: Y4-M5
Mounting Type: Chassis Mount
Input: Standard
Configuration: Single
Operating Temperature: -40°C ~ 150°C (TJ)
Vce(on) (Max) @ Vge, Ic: 2.7V @ 15V, 50A
NTC Thermistor: No
Supplier Device Package: Y4-M5
IGBT Type: NPT
Part Status: Obsolete
Current - Collector (Ic) (Max): 90 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Power - Max: 370 W
Current - Collector Cutoff (Max): 4 mA
Input Capacitance (Cies) @ Vce: 3.3 nF @ 25 V
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MDO500-12N1 MDO500-12N1 IXYS MDO500.pdf Description: DIODE STANDARD 1200V 560A Y1CU
Current - Reverse Leakage @ Vr: 30 mA @ 1200 V
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 1200 A
Voltage - DC Reverse (Vr) (Max): 1200 V
Supplier Device Package: Y1-CU
Current - Average Rectified (Io): 560A
Capacitance @ Vr, F: 762pF @ 400V, 1MHz
Technology: Standard
Speed: Standard Recovery >500ns, > 200mA (Io)
Mounting Type: Chassis Mount
Package / Case: Y1-CU
Packaging: Box
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MDO500-14N1 IXYS MDO500.pdf Description: DIODE GEN PURP 1.4KV 560A Y1-CU
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MDO500-16N1 IXYS MDO500.pdf Description: DIODE GEN PURP 1.6KV 560A Y1-CU
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MDO500-18N1 IXYS MDO500.pdf Description: DIODE GEN PURP 1.8KV 560A Y1-CU
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MDO500-20N1 IXYS MDO500.pdf Description: DIODE GEN PURP 2KV 560A Y1-CU
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MCO600-22io1 Littelfuse-Power-Semiconductors-MCO600-22io1-Datasheet?assetguid=513E57AB-C4CD-4D86-994B-0EA2FF79457F
MCO600-22io1
Hersteller: IXYS
Description: SCR MODULE 2.2KV 928A Y1-CU
Packaging: Box
Package / Case: Y1-CU
Mounting Type: Chassis Mount
Operating Temperature: -40°C ~ 140°C (TJ)
Structure: Single
Current - Hold (Ih) (Max): 300 mA
Current - Gate Trigger (Igt) (Max): 300 mA
Current - Non Rep. Surge 50, 60Hz (Itsm): 15000A, 16000A
Number of SCRs, Diodes: 1 SCR
Current - On State (It (AV)) (Max): 600 A
Voltage - Gate Trigger (Vgt) (Max): 2 V
Current - On State (It (RMS)) (Max): 928 A
Voltage - Off State: 2.2 kV
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MDA72-08N1B MDD72,%20MDA72.pdf
MDA72-08N1B
Hersteller: IXYS
Description: DIODE MODULE 800V 113A TO240AA
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MDA72-14N1B MDD72,%20MDA72.pdf
MDA72-14N1B
Hersteller: IXYS
Description: DIODE MODULE 1.4KV 113A TO240AA
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MDD142-08N1 MDD142-08N1.pdf
Hersteller: IXYS
Description: DIODE MODULE 800V 165A Y4-M6
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MDD142-12N1 MDD142-12N1.pdf
Hersteller: IXYS
Description: DIODE MODULE GP 1200V 165A Y4-M6
Packaging: Box
Package / Case: Y4-M6
Mounting Type: Chassis Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard
Diode Configuration: 1 Pair Series Connection
Current - Average Rectified (Io) (per Diode): 165A
Supplier Device Package: Y4-M6
Operating Temperature - Junction: -40°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 1200 V
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 300 A
Current - Reverse Leakage @ Vr: 20 mA @ 1200 V
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MDD142-14N1 MDD142-14N1.pdf
Hersteller: IXYS
Description: DIODE MODULE 1.4KV 165A Y4-M6
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MDD142-16N1 Littelfuse-Power-Semiconductors-MDD142-16N1-Datasheet?assetguid=3222FCB2-82F4-4AD5-B2B5-DD3FC8D3799E
MDD142-16N1
Hersteller: IXYS
Description: DIODE MODULE GP 1600V 165A Y4-M6
Packaging: Box
Package / Case: Y4-M6
Mounting Type: Chassis Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard
Diode Configuration: 1 Pair Series Connection
Current - Average Rectified (Io) (per Diode): 165A
Supplier Device Package: Y4-M6
Operating Temperature - Junction: -40°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 1600 V
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 300 A
Current - Reverse Leakage @ Vr: 20 mA @ 1600 V
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1+83.34 EUR
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MDD142-18N1 MDD142-18N1.pdf
Hersteller: IXYS
Description: DIODE MODULE 1.8KV 165A Y4-M6
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MDD172-08N1 MDD172.pdf
MDD172-08N1
Hersteller: IXYS
Description: DIODE MODULE 800V 190A Y4-M6
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Anzahl Preis
1+92 EUR
10+85.81 EUR
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MDD172-14N1 MDD172.pdf
MDD172-14N1
Hersteller: IXYS
Description: DIODE MODULE 1.4KV 190A Y4-M6
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MDD172-16N1 Littelfuse-Power-Semiconductors-MDD172-16N1-Datasheet?assetguid=5CAB1B92-563C-4402-B56D-2490381D3772
MDD172-16N1
Hersteller: IXYS
Description: DIODE MODULE GP 1600V 190A Y4-M6
Packaging: Box
Package / Case: Y4-M6
Mounting Type: Chassis Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard
Diode Configuration: 1 Pair Series Connection
Current - Average Rectified (Io) (per Diode): 190A
Supplier Device Package: Y4-M6
Operating Temperature - Junction: -40°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 1600 V
Voltage - Forward (Vf) (Max) @ If: 1.15 V @ 300 A
Current - Reverse Leakage @ Vr: 20 mA @ 1600 V
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Anzahl Preis
1+90.16 EUR
12+67.57 EUR
102+66.62 EUR
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MDD172-18N1 MDD172.pdf
MDD172-18N1
Hersteller: IXYS
Description: DIODE MODULE 1.8KV 190A Y4-M6
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MDD200-14N1 MDD200-14N1.pdf
MDD200-14N1
Hersteller: IXYS
Description: DIODE MODULE GP 1400V 224A Y4-M6
Packaging: Box
Package / Case: Y4-M6
Mounting Type: Chassis Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard
Diode Configuration: 1 Pair Series Connection
Current - Average Rectified (Io) (per Diode): 224A
Supplier Device Package: Y4-M6
Operating Temperature - Junction: -40°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 1400 V
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 300 A
Current - Reverse Leakage @ Vr: 20 mA @ 1400 V
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MDD200-16N1 MDD200-16N1.pdf
MDD200-16N1
Hersteller: IXYS
Description: DIODE MODULE GP 1600V 224A Y4-M6
Packaging: Box
Package / Case: Y4-M6
Mounting Type: Chassis Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard
Diode Configuration: 1 Pair Series Connection
Current - Average Rectified (Io) (per Diode): 224A
Supplier Device Package: Y4-M6
Operating Temperature - Junction: -40°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 1600 V
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 300 A
Current - Reverse Leakage @ Vr: 20 mA @ 1600 V
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MDD200-18N1 MDD200-18N1.pdf
MDD200-18N1
Hersteller: IXYS
Description: DIODE MODULE GP 1800V 224A Y4-M6
Packaging: Box
Package / Case: Y4-M6
Mounting Type: Chassis Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard
Diode Configuration: 1 Pair Series Connection
Current - Average Rectified (Io) (per Diode): 224A
Supplier Device Package: Y4-M6
Operating Temperature - Junction: -40°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 1800 V
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 300 A
Current - Reverse Leakage @ Vr: 20 mA @ 1800 V
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MDD220-08N1 MDD220.pdf
Hersteller: IXYS
Description: DIODE MODULE GP 800V 270A Y2-DCB
Current - Reverse Leakage @ Vr: 40 mA @ 800 V
Voltage - Forward (Vf) (Max) @ If: 1.4 V @ 600 A
Voltage - DC Reverse (Vr) (Max): 800 V
Part Status: Active
Operating Temperature - Junction: -40°C ~ 150°C
Supplier Device Package: Y2-DCB
Current - Average Rectified (Io) (per Diode): 270A
Diode Configuration: 1 Pair Series Connection
Technology: Standard
Speed: Standard Recovery >500ns, > 200mA (Io)
Mounting Type: Chassis Mount
Package / Case: Y2-DCB
Packaging: Box
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MDD220-12N1 MDD220.pdf
Hersteller: IXYS
Description: DIODE MOD GP 1.2KV 270A Y2-DCB
Current - Reverse Leakage @ Vr: 40 mA @ 1200 V
Voltage - Forward (Vf) (Max) @ If: 1.4 V @ 600 A
Voltage - DC Reverse (Vr) (Max): 1200 V
Operating Temperature - Junction: -40°C ~ 150°C
Supplier Device Package: Y2-DCB
Current - Average Rectified (Io) (per Diode): 270A
Diode Configuration: 1 Pair Series Connection
Technology: Standard
Speed: Standard Recovery >500ns, > 200mA (Io)
Mounting Type: Chassis Mount
Package / Case: Y2-DCB
Packaging: Box
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MDD220-14N1 MDD220.pdf
Hersteller: IXYS
Description: DIODE MOD GP 1.4KV 270A Y2-DCB
Current - Reverse Leakage @ Vr: 40 mA @ 1400 V
Voltage - Forward (Vf) (Max) @ If: 1.4 V @ 600 A
Voltage - DC Reverse (Vr) (Max): 1400 V
Operating Temperature - Junction: -40°C ~ 150°C
Supplier Device Package: Y2-DCB
Current - Average Rectified (Io) (per Diode): 270A
Diode Configuration: 1 Pair Series Connection
Technology: Standard
Speed: Standard Recovery >500ns, > 200mA (Io)
Mounting Type: Chassis Mount
Package / Case: Y2-DCB
Packaging: Box
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MDD220-16N1 MDD220.pdf
Hersteller: IXYS
Description: DIODE MOD GP 1.6KV 270A Y2-DCB
Current - Reverse Leakage @ Vr: 40 mA @ 1600 V
Voltage - Forward (Vf) (Max) @ If: 1.4 V @ 600 A
Voltage - DC Reverse (Vr) (Max): 1600 V
Operating Temperature - Junction: -40°C ~ 150°C
Supplier Device Package: Y2-DCB
Current - Average Rectified (Io) (per Diode): 270A
Diode Configuration: 1 Pair Series Connection
Technology: Standard
Speed: Standard Recovery >500ns, > 200mA (Io)
Mounting Type: Chassis Mount
Package / Case: Y2-DCB
Packaging: Box
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MDD220-18N1 MDD220.pdf
Hersteller: IXYS
Description: DIODE MOD GP 1800V 270A Y2-DCB
Speed: Standard Recovery >500ns, > 200mA (Io)
Mounting Type: Chassis Mount
Package / Case: Y2-DCB
Packaging: Box
Current - Reverse Leakage @ Vr: 40 mA @ 1800 V
Voltage - Forward (Vf) (Max) @ If: 1.4 V @ 600 A
Voltage - DC Reverse (Vr) (Max): 1800 V
Operating Temperature - Junction: -40°C ~ 150°C
Supplier Device Package: Y2-DCB
Current - Average Rectified (Io) (per Diode): 270A
Diode Configuration: 1 Pair Series Connection
Technology: Standard
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MDD250-08N1 MDD250.pdf
Hersteller: IXYS
Description: DIODE MODULE 800V 290A Y2-DCB
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MDD250-12N1
Hersteller: IXYS
Description: DIODE MOD GP 1.2KV 290A Y2-DCB
Current - Reverse Leakage @ Vr: 40 mA @ 1200 V
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 600 A
Voltage - DC Reverse (Vr) (Max): 1200 V
Operating Temperature - Junction: -40°C ~ 150°C
Supplier Device Package: Y2-DCB
Current - Average Rectified (Io) (per Diode): 290A
Diode Configuration: 1 Pair Series Connection
Technology: Standard
Speed: Standard Recovery >500ns, > 200mA (Io)
Mounting Type: Chassis Mount
Package / Case: Y2-DCB
Packaging: Box
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MDD250-14N1 MDD250.pdf
Hersteller: IXYS
Description: DIODE MODULE 1.4KV 290A Y2-DCB
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MDD250-16N1 MDD250.pdf
Hersteller: IXYS
Description: DIODE MODULE 1.6KV 290A Y2-DCB
Produkt ist nicht verfügbar
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MDD255-12N1 media?resourcetype=datasheets&itemid=8F2E4C04-244A-4482-B217-CEFD0C2B8D03&filename=Littelfuse-Power-Semiconductors-MDD255-12N1-Datasheet
MDD255-12N1
Hersteller: IXYS
Description: DIODE MODULE GP 1200V 270A Y1-CU
Current - Reverse Leakage @ Vr: 30 mA @ 1200 V
Voltage - Forward (Vf) (Max) @ If: 1.4 V @ 600 A
Voltage - DC Reverse (Vr) (Max): 1200 V
Operating Temperature - Junction: -40°C ~ 150°C
Supplier Device Package: Y1-CU
Current - Average Rectified (Io) (per Diode): 270A
Diode Configuration: 1 Pair Series Connection
Technology: Standard
Speed: Standard Recovery >500ns, > 200mA (Io)
Mounting Type: Chassis Mount
Package / Case: Y1-CU
Packaging: Box
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MDD255-14N1 Littelfuse-Power-Semiconductors-MDD255-14N1-Datasheet?assetguid=567345C0-127B-4813-9F4B-CF265C4DE74D
MDD255-14N1
Hersteller: IXYS
Description: DIODE MODULE GP 1400V 270A Y1-CU
Current - Reverse Leakage @ Vr: 30 mA @ 1400 V
Voltage - Forward (Vf) (Max) @ If: 1.4 V @ 600 A
Voltage - DC Reverse (Vr) (Max): 1400 V
Operating Temperature - Junction: -40°C ~ 150°C
Supplier Device Package: Y1-CU
Current - Average Rectified (Io) (per Diode): 270A
Diode Configuration: 1 Pair Series Connection
Technology: Standard
Speed: Standard Recovery >500ns, > 200mA (Io)
Mounting Type: Chassis Mount
Package / Case: Y1-CU
Packaging: Box
Produkt ist nicht verfügbar
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MDD255-16N1 media?resourcetype=datasheets&itemid=01C6678D-C745-4B36-AD3B-239753D33AEA&filename=Littelfuse-Power-Semiconductors-MDD255-16N1-Datasheet
MDD255-16N1
Hersteller: IXYS
Description: DIODE MODULE GP 1600V 270A Y1-CU
Current - Reverse Leakage @ Vr: 30 mA @ 1600 V
Voltage - Forward (Vf) (Max) @ If: 1.4 V @ 600 A
Voltage - DC Reverse (Vr) (Max): 1600 V
Operating Temperature - Junction: -40°C ~ 150°C
Supplier Device Package: Y1-CU
Current - Average Rectified (Io) (per Diode): 270A
Diode Configuration: 1 Pair Series Connection
Technology: Standard
Speed: Standard Recovery >500ns, > 200mA (Io)
Mounting Type: Chassis Mount
Package / Case: Y1-CU
Packaging: Box
auf Bestellung 3 Stücke:
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Anzahl Preis
1+233.9 EUR
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MDD255-18N1 media?resourcetype=datasheets&itemid=3264DC63-47B9-4124-9137-7C3F9A66247B&filename=Littelfuse-Power-Semiconductors-MDD255-18N1-Datasheet
Hersteller: IXYS
Description: DIODE MODULE GP 1800V 270A Y1-CU
Current - Reverse Leakage @ Vr: 30 mA @ 1800 V
Voltage - Forward (Vf) (Max) @ If: 1.4 V @ 600 A
Voltage - DC Reverse (Vr) (Max): 1800 V
Operating Temperature - Junction: -40°C ~ 150°C
Supplier Device Package: Y1-CU
Current - Average Rectified (Io) (per Diode): 270A
Diode Configuration: 1 Pair Series Connection
Technology: Standard
Speed: Standard Recovery >500ns, > 200mA (Io)
Mounting Type: Chassis Mount
Package / Case: Y1-CU
Packaging: Box
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MDD255-20N1 media?resourcetype=datasheets&itemid=1CB2149A-671B-402D-AF9A-E6290574C9B6&filename=Littelfuse-Power-Semiconductors-MDD255-20N1-Datasheet
Hersteller: IXYS
Description: DIODE MODULE GP 2000V 270A Y1-CU
Current - Reverse Leakage @ Vr: 30 mA @ 2000 V
Voltage - Forward (Vf) (Max) @ If: 1.4 V @ 600 A
Voltage - DC Reverse (Vr) (Max): 2000 V
Operating Temperature - Junction: -40°C ~ 150°C
Supplier Device Package: Y1-CU
Current - Average Rectified (Io) (per Diode): 270A
Diode Configuration: 1 Pair Series Connection
Technology: Standard
Speed: Standard Recovery >500ns, > 200mA (Io)
Mounting Type: Chassis Mount
Package / Case: Y1-CU
Packaging: Box
auf Bestellung 6 Stücke:
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Anzahl Preis
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MDD255-22N1 media?resourcetype=datasheets&itemid=D396DFBE-7F86-4634-A5CD-A3ABCB546C2E&filename=Littelfuse-Power-Semiconductors-MDD255-22N1-Datasheet
MDD255-22N1
Hersteller: IXYS
Description: DIODE MODULE GP 2200V 270A Y1-CU
Operating Temperature - Junction: -40°C ~ 150°C
Supplier Device Package: Y1-CU
Current - Average Rectified (Io) (per Diode): 270A
Diode Configuration: 1 Pair Series Connection
Technology: Standard
Speed: Standard Recovery >500ns, > 200mA (Io)
Mounting Type: Chassis Mount
Package / Case: Y1-CU
Packaging: Box
Current - Reverse Leakage @ Vr: 30 mA @ 2200 V
Voltage - Forward (Vf) (Max) @ If: 1.4 V @ 600 A
Voltage - DC Reverse (Vr) (Max): 2200 V
auf Bestellung 3 Stücke:
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Anzahl Preis
1+273.2 EUR
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MDD26-12N1B MDD26-12N1B.pdf
MDD26-12N1B
Hersteller: IXYS
Description: DIODE MODULE 1.2KV 36A TO240AA
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MDD310-08N1 MDD310-08N1.pdf
Hersteller: IXYS
Description: DIODE MODULE GP 800V 305A Y2-DCB
Current - Reverse Leakage @ Vr: 40 mA @ 800 V
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 600 A
Voltage - DC Reverse (Vr) (Max): 800 V
Operating Temperature - Junction: -40°C ~ 150°C
Supplier Device Package: Y2-DCB
Current - Average Rectified (Io) (per Diode): 305A
Diode Configuration: 1 Pair Series Connection
Technology: Standard
Speed: Standard Recovery >500ns, > 200mA (Io)
Mounting Type: Chassis Mount
Package / Case: Y2-DCB
Packaging: Box
Produkt ist nicht verfügbar
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MDD310-12N1 MDD310.pdf
Hersteller: IXYS
Description: DIODE MOD GP 1.2KV 305A Y2-DCB
Packaging: Box
Package / Case: Y2-DCB
Mounting Type: Chassis Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard
Diode Configuration: 1 Pair Series Connection
Current - Average Rectified (Io) (per Diode): 305A
Supplier Device Package: Y2-DCB
Operating Temperature - Junction: -40°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 1200 V
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 600 A
Current - Reverse Leakage @ Vr: 40 mA @ 1200 V
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MDD310-14N1 MDD310.pdf
Hersteller: IXYS
Description: DIODE MOD GP 1.4KV 305A Y2-DCB
Packaging: Box
Package / Case: Y2-DCB
Mounting Type: Chassis Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard
Diode Configuration: 1 Pair Series Connection
Current - Average Rectified (Io) (per Diode): 305A
Supplier Device Package: Y2-DCB
Operating Temperature - Junction: -40°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 1400 V
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 600 A
Current - Reverse Leakage @ Vr: 40 mA @ 1400 V
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MDD310-16N1 MDD310.pdf
MDD310-16N1
Hersteller: IXYS
Description: DIODE MOD GP 1.6KV 305A Y2-DCB
Packaging: Box
Package / Case: Y2-DCB
Mounting Type: Chassis Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard
Diode Configuration: 1 Pair Series Connection
Current - Average Rectified (Io) (per Diode): 305A
Supplier Device Package: Y2-DCB
Operating Temperature - Junction: -40°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 1600 V
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 600 A
Current - Reverse Leakage @ Vr: 40 mA @ 1600 V
auf Bestellung 2 Stücke:
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Anzahl Preis
1+178.71 EUR
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MDD310-18N1 MDD310.pdf
Hersteller: IXYS
Description: DIODE MOD GP 1800V 305A Y2-DCB
Packaging: Box
Package / Case: Y2-DCB
Mounting Type: Chassis Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard
Diode Configuration: 1 Pair Series Connection
Current - Average Rectified (Io) (per Diode): 305A
Supplier Device Package: Y2-DCB
Operating Temperature - Junction: -40°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 1800 V
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 600 A
Current - Reverse Leakage @ Vr: 40 mA @ 1800 V
Produkt ist nicht verfügbar
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MDD310-20N1 MDD310.pdf
Hersteller: IXYS
Description: DIODE MOD GP 2000V 305A Y2-DCB
Packaging: Box
Package / Case: Y2-DCB
Mounting Type: Chassis Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard
Diode Configuration: 1 Pair Series Connection
Current - Average Rectified (Io) (per Diode): 305A
Supplier Device Package: Y2-DCB
Operating Temperature - Junction: -40°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 2000 V
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 600 A
Current - Reverse Leakage @ Vr: 40 mA @ 2000 V
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MDD310-22N1 MDD310.pdf
Hersteller: IXYS
Description: DIODE MOD GP 2.2KV 305A Y2-DCB
Packaging: Box
Package / Case: Y2-DCB
Mounting Type: Chassis Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard
Diode Configuration: 1 Pair Series Connection
Current - Average Rectified (Io) (per Diode): 305A
Supplier Device Package: Y2-DCB
Operating Temperature - Junction: -40°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 2200 V
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 600 A
Current - Reverse Leakage @ Vr: 40 mA @ 2200 V
auf Bestellung 44 Stücke:
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Anzahl Preis
2+201.53 EUR
Mindestbestellmenge: 2
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MDD312-12N1 IXYS_Selectorguide_2015.pdf#page=97
Hersteller: IXYS
Description: DIODE MODULE 1.2KV 310A Y1-CU
auf Bestellung 2 Stücke:
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Anzahl Preis
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MDD312-14N1 MDD312.pdf
Hersteller: IXYS
Description: DIODE MODULE 1.4KV 310A Y1-CU
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MDD312-16N1 MDD312-16N1.pdf
MDD312-16N1
Hersteller: IXYS
Description: DIODE MODULE 1.6KV 310A Y1-CU
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MDD312-18N1 media?resourcetype=datasheets&itemid=0ACDE308-88D3-49A9-8989-1A524615D7B5&filename=Littelfuse-Power-Semiconductors-MDD312-18N1-Datasheet
MDD312-18N1
Hersteller: IXYS
Description: DIODE MODULE GP 1800V 310A Y1-CU
Current - Reverse Leakage @ Vr: 30 mA @ 1800 V
Voltage - Forward (Vf) (Max) @ If: 1.32 V @ 600 A
Voltage - DC Reverse (Vr) (Max): 1800 V
Operating Temperature - Junction: -40°C ~ 150°C
Supplier Device Package: Y1-CU
Current - Average Rectified (Io) (per Diode): 310A
Diode Configuration: 1 Pair Series Connection
Technology: Standard
Speed: Standard Recovery >500ns, > 200mA (Io)
Mounting Type: Chassis Mount
Package / Case: Y1-CU
Packaging: Box
auf Bestellung 6 Stücke:
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Anzahl Preis
1+255.29 EUR
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MDD312-20N1 MDD312-20N1.pdf
Hersteller: IXYS
Description: DIODE MODULE 2KV 310A Y1-CU
Produkt ist nicht verfügbar
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MDD312-22N1 MDD312.pdf
MDD312-22N1
Hersteller: IXYS
Description: DIODE MODULE 2.2KV 310A Y1-CU
Produkt ist nicht verfügbar
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MDD600-12N1 MDx600.pdf
Hersteller: IXYS
Description: DIODE MODULE GP 1200V 600A WC500
Current - Reverse Leakage @ Vr: 50 mA @ 1200 V
Voltage - Forward (Vf) (Max) @ If: 880 mV @ 500 A
Voltage - DC Reverse (Vr) (Max): 1200 V
Operating Temperature - Junction: -40°C ~ 150°C
Supplier Device Package: WC-500
Current - Average Rectified (Io) (per Diode): 600A
Diode Configuration: 1 Pair Series Connection
Technology: Standard
Speed: Standard Recovery >500ns, > 200mA (Io)
Mounting Type: Chassis Mount
Package / Case: WC-500
Packaging: Box
Produkt ist nicht verfügbar
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MDD600-16N1 MDx600.pdf
Hersteller: IXYS
Description: DIODE MODULE GP 1600V 600A WC500
Package / Case: WC-500
Packaging: Box
Current - Reverse Leakage @ Vr: 50 mA @ 1600 V
Voltage - Forward (Vf) (Max) @ If: 880 mV @ 500 A
Voltage - DC Reverse (Vr) (Max): 1600 V
Operating Temperature - Junction: -40°C ~ 150°C
Supplier Device Package: WC-500
Current - Average Rectified (Io) (per Diode): 600A
Diode Configuration: 1 Pair Series Connection
Technology: Standard
Speed: Standard Recovery >500ns, > 200mA (Io)
Mounting Type: Chassis Mount
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MDD600-18N1 MDx600.pdf
Hersteller: IXYS
Description: DIODE MODULE GP 1800V 600A WC500
Current - Reverse Leakage @ Vr: 50 mA @ 1800 V
Voltage - Forward (Vf) (Max) @ If: 880 mV @ 500 A
Voltage - DC Reverse (Vr) (Max): 1800 V
Operating Temperature - Junction: -40°C ~ 150°C
Supplier Device Package: WC-500
Current - Average Rectified (Io) (per Diode): 600A
Diode Configuration: 1 Pair Series Connection
Technology: Standard
Speed: Standard Recovery >500ns, > 200mA (Io)
Mounting Type: Chassis Mount
Package / Case: WC-500
Packaging: Box
Produkt ist nicht verfügbar
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MDI100-12A3
Hersteller: IXYS
Description: IGBT MODULE 1200V 135A 560W Y4M5
Input Capacitance (Cies) @ Vce: 5.5 nF @ 25 V
Current - Collector Cutoff (Max): 5 mA
Power - Max: 560 W
Voltage - Collector Emitter Breakdown (Max): 1200 V
Current - Collector (Ic) (Max): 135 A
IGBT Type: NPT
Supplier Device Package: Y4-M5
NTC Thermistor: No
Vce(on) (Max) @ Vge, Ic: 2.7V @ 15V, 75A
Operating Temperature: -40°C ~ 150°C (TJ)
Configuration: Single
Input: Standard
Mounting Type: Chassis Mount
Package / Case: Y4-M5
Packaging: Box
Produkt ist nicht verfügbar
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MDI145-12A3
MDI145-12A3
Hersteller: IXYS
Description: IGBT MOD 1200V 160A 700W Y4-M5
Packaging: Box
Package / Case: Y4-M5
Mounting Type: Chassis Mount
Input: Standard
Configuration: Single
Operating Temperature: -40°C ~ 150°C (TJ)
Vce(on) (Max) @ Vge, Ic: 2.7V @ 15V, 100A
NTC Thermistor: No
Supplier Device Package: Y4-M5
IGBT Type: NPT
Current - Collector (Ic) (Max): 160 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Power - Max: 700 W
Current - Collector Cutoff (Max): 6 mA
Input Capacitance (Cies) @ Vce: 6.5 nF @ 25 V
Produkt ist nicht verfügbar
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MDI150-12A4 MII150-12A4_MID150-12A4_MDI150-12A4.pdf
Hersteller: IXYS
Description: IGBT MOD 1200V 180A 760W Y3DCB
Input Capacitance (Cies) @ Vce: 6.6 nF @ 25 V
Current - Collector Cutoff (Max): 7.5 mA
Power - Max: 760 W
Voltage - Collector Emitter Breakdown (Max): 1200 V
Current - Collector (Ic) (Max): 180 A
Part Status: Active
IGBT Type: NPT
Supplier Device Package: Y3-DCB
NTC Thermistor: No
Vce(on) (Max) @ Vge, Ic: 2.7V @ 15V, 100A
Operating Temperature: 150°C (TJ)
Configuration: Single
Input: Standard
Mounting Type: Chassis Mount
Package / Case: Y3-DCB
Packaging: Box
Produkt ist nicht verfügbar
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MDI200-12A4
Hersteller: IXYS
Description: IGBT MOD 1200V 270A 1130W Y3-DCB
Packaging: Box
Package / Case: Y3-DCB
Mounting Type: Chassis Mount
Input: Standard
Configuration: Single
Operating Temperature: 150°C (TJ)
Vce(on) (Max) @ Vge, Ic: 2.7V @ 15V, 150A
NTC Thermistor: No
Supplier Device Package: Y3-DCB
IGBT Type: NPT
Current - Collector (Ic) (Max): 270 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Power - Max: 1130 W
Current - Collector Cutoff (Max): 10 mA
Input Capacitance (Cies) @ Vce: 11 nF @ 25 V
Produkt ist nicht verfügbar
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MDI300-12A4
Hersteller: IXYS
Description: IGBT MOD 1200V 330A 1380W Y3-DCB
Packaging: Box
Package / Case: Y3-DCB
Mounting Type: Chassis Mount
Input: Standard
Configuration: Single
Operating Temperature: -40°C ~ 150°C (TJ)
Vce(on) (Max) @ Vge, Ic: 2.7V @ 15V, 200A
NTC Thermistor: No
Supplier Device Package: Y3-DCB
IGBT Type: NPT
Part Status: Obsolete
Current - Collector (Ic) (Max): 330 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Power - Max: 1380 W
Current - Collector Cutoff (Max): 13 mA
Input Capacitance (Cies) @ Vce: 13 nF @ 25 V
Produkt ist nicht verfügbar
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MDI400-12E4 MII400-12E4_MID400-12E4%28T%29_MDI400-12E4.pdf
Hersteller: IXYS
Description: IGBT MOD 1200V 420A 1700W Y3LI
Packaging: Box
Package / Case: Y3-Li
Mounting Type: Chassis Mount
Input: Standard
Configuration: Single
Operating Temperature: -40°C ~ 150°C (TJ)
Vce(on) (Max) @ Vge, Ic: 2.8V @ 15V, 300A
NTC Thermistor: No
Supplier Device Package: Y3-Li
IGBT Type: NPT
Current - Collector (Ic) (Max): 420 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Power - Max: 1700 W
Current - Collector Cutoff (Max): 3.3 mA
Input Capacitance (Cies) @ Vce: 17 nF @ 25 V
Produkt ist nicht verfügbar
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MDI550-12A4
Hersteller: IXYS
Description: IGBT MOD 1200V 670A 2750W Y3DCB
Packaging: Box
Package / Case: Y3-DCB
Mounting Type: Chassis Mount
Input: Standard
Configuration: Single
Operating Temperature: 150°C (TJ)
Vce(on) (Max) @ Vge, Ic: 2.8V @ 15V, 400A
NTC Thermistor: No
Supplier Device Package: Y3-DCB
IGBT Type: NPT
Current - Collector (Ic) (Max): 670 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Power - Max: 2750 W
Current - Collector Cutoff (Max): 21 mA
Input Capacitance (Cies) @ Vce: 26 nF @ 25 V
Produkt ist nicht verfügbar
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MDI75-12A3
Hersteller: IXYS
Description: IGBT MODULE 1200V 90A 370W Y4M5
Packaging: Box
Package / Case: Y4-M5
Mounting Type: Chassis Mount
Input: Standard
Configuration: Single
Operating Temperature: -40°C ~ 150°C (TJ)
Vce(on) (Max) @ Vge, Ic: 2.7V @ 15V, 50A
NTC Thermistor: No
Supplier Device Package: Y4-M5
IGBT Type: NPT
Part Status: Obsolete
Current - Collector (Ic) (Max): 90 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Power - Max: 370 W
Current - Collector Cutoff (Max): 4 mA
Input Capacitance (Cies) @ Vce: 3.3 nF @ 25 V
Produkt ist nicht verfügbar
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MDO500-12N1 MDO500.pdf
MDO500-12N1
Hersteller: IXYS
Description: DIODE STANDARD 1200V 560A Y1CU
Current - Reverse Leakage @ Vr: 30 mA @ 1200 V
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 1200 A
Voltage - DC Reverse (Vr) (Max): 1200 V
Supplier Device Package: Y1-CU
Current - Average Rectified (Io): 560A
Capacitance @ Vr, F: 762pF @ 400V, 1MHz
Technology: Standard
Speed: Standard Recovery >500ns, > 200mA (Io)
Mounting Type: Chassis Mount
Package / Case: Y1-CU
Packaging: Box
auf Bestellung 70 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
1+222.64 EUR
10+194.16 EUR
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MDO500-14N1 MDO500.pdf
Hersteller: IXYS
Description: DIODE GEN PURP 1.4KV 560A Y1-CU
Produkt ist nicht verfügbar
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MDO500-16N1 MDO500.pdf
Hersteller: IXYS
Description: DIODE GEN PURP 1.6KV 560A Y1-CU
Produkt ist nicht verfügbar
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MDO500-18N1 MDO500.pdf
Hersteller: IXYS
Description: DIODE GEN PURP 1.8KV 560A Y1-CU
Produkt ist nicht verfügbar
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MDO500-20N1 MDO500.pdf
Hersteller: IXYS
Description: DIODE GEN PURP 2KV 560A Y1-CU
Produkt ist nicht verfügbar
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