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MDD255-20N1 IXYS media?resourcetype=datasheets&itemid=1CB2149A-671B-402D-AF9A-E6290574C9B6&filename=Littelfuse-Power-Semiconductors-MDD255-20N1-Datasheet Description: DIODE MODULE GP 2000V 270A Y1-CU
Current - Reverse Leakage @ Vr: 30 mA @ 2000 V
Voltage - Forward (Vf) (Max) @ If: 1.4 V @ 600 A
Voltage - DC Reverse (Vr) (Max): 2000 V
Operating Temperature - Junction: -40°C ~ 150°C
Supplier Device Package: Y1-CU
Current - Average Rectified (Io) (per Diode): 270A
Diode Configuration: 1 Pair Series Connection
Technology: Standard
Speed: Standard Recovery >500ns, > 200mA (Io)
Mounting Type: Chassis Mount
Package / Case: Y1-CU
Packaging: Box
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MDD255-22N1 MDD255-22N1 IXYS media?resourcetype=datasheets&itemid=D396DFBE-7F86-4634-A5CD-A3ABCB546C2E&filename=Littelfuse-Power-Semiconductors-MDD255-22N1-Datasheet Description: DIODE MODULE GP 2200V 270A Y1-CU
Operating Temperature - Junction: -40°C ~ 150°C
Supplier Device Package: Y1-CU
Current - Average Rectified (Io) (per Diode): 270A
Diode Configuration: 1 Pair Series Connection
Technology: Standard
Speed: Standard Recovery >500ns, > 200mA (Io)
Mounting Type: Chassis Mount
Package / Case: Y1-CU
Packaging: Box
Current - Reverse Leakage @ Vr: 30 mA @ 2200 V
Voltage - Forward (Vf) (Max) @ If: 1.4 V @ 600 A
Voltage - DC Reverse (Vr) (Max): 2200 V
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MDD26-12N1B MDD26-12N1B IXYS MDD26-12N1B.pdf Description: DIODE MODULE 1.2KV 36A TO240AA
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MDD310-08N1 IXYS MDD310-08N1.pdf Description: DIODE MODULE GP 800V 305A Y2-DCB
Current - Reverse Leakage @ Vr: 40 mA @ 800 V
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 600 A
Voltage - DC Reverse (Vr) (Max): 800 V
Operating Temperature - Junction: -40°C ~ 150°C
Supplier Device Package: Y2-DCB
Current - Average Rectified (Io) (per Diode): 305A
Diode Configuration: 1 Pair Series Connection
Technology: Standard
Speed: Standard Recovery >500ns, > 200mA (Io)
Mounting Type: Chassis Mount
Package / Case: Y2-DCB
Packaging: Box
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MDD310-12N1 IXYS MDD310.pdf Description: DIODE MOD GP 1.2KV 305A Y2-DCB
Packaging: Box
Package / Case: Y2-DCB
Mounting Type: Chassis Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard
Diode Configuration: 1 Pair Series Connection
Current - Average Rectified (Io) (per Diode): 305A
Supplier Device Package: Y2-DCB
Operating Temperature - Junction: -40°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 1200 V
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 600 A
Current - Reverse Leakage @ Vr: 40 mA @ 1200 V
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MDD310-14N1 IXYS MDD310.pdf Description: DIODE MOD GP 1.4KV 305A Y2-DCB
Packaging: Box
Package / Case: Y2-DCB
Mounting Type: Chassis Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard
Diode Configuration: 1 Pair Series Connection
Current - Average Rectified (Io) (per Diode): 305A
Supplier Device Package: Y2-DCB
Operating Temperature - Junction: -40°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 1400 V
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 600 A
Current - Reverse Leakage @ Vr: 40 mA @ 1400 V
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MDD310-16N1 MDD310-16N1 IXYS MDD310.pdf Description: DIODE MOD GP 1.6KV 305A Y2-DCB
Packaging: Box
Package / Case: Y2-DCB
Mounting Type: Chassis Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard
Diode Configuration: 1 Pair Series Connection
Current - Average Rectified (Io) (per Diode): 305A
Supplier Device Package: Y2-DCB
Operating Temperature - Junction: -40°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 1600 V
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 600 A
Current - Reverse Leakage @ Vr: 40 mA @ 1600 V
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MDD310-18N1 IXYS MDD310.pdf Description: DIODE MOD GP 1800V 305A Y2-DCB
Packaging: Box
Package / Case: Y2-DCB
Mounting Type: Chassis Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard
Diode Configuration: 1 Pair Series Connection
Current - Average Rectified (Io) (per Diode): 305A
Supplier Device Package: Y2-DCB
Operating Temperature - Junction: -40°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 1800 V
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 600 A
Current - Reverse Leakage @ Vr: 40 mA @ 1800 V
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MDD310-20N1 IXYS MDD310.pdf Description: DIODE MOD GP 2000V 305A Y2-DCB
Packaging: Box
Package / Case: Y2-DCB
Mounting Type: Chassis Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard
Diode Configuration: 1 Pair Series Connection
Current - Average Rectified (Io) (per Diode): 305A
Supplier Device Package: Y2-DCB
Operating Temperature - Junction: -40°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 2000 V
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 600 A
Current - Reverse Leakage @ Vr: 40 mA @ 2000 V
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MDD310-22N1 IXYS MDD310.pdf Description: DIODE MOD GP 2.2KV 305A Y2-DCB
Packaging: Box
Package / Case: Y2-DCB
Mounting Type: Chassis Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard
Diode Configuration: 1 Pair Series Connection
Current - Average Rectified (Io) (per Diode): 305A
Supplier Device Package: Y2-DCB
Operating Temperature - Junction: -40°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 2200 V
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 600 A
Current - Reverse Leakage @ Vr: 40 mA @ 2200 V
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MDD312-12N1 IXYS IXYS_Selectorguide_2015.pdf#page=97 Description: DIODE MODULE 1.2KV 310A Y1-CU
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MDD312-14N1 IXYS MDD312.pdf Description: DIODE MODULE 1.4KV 310A Y1-CU
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MDD312-16N1 MDD312-16N1 IXYS MDD312-16N1.pdf Description: DIODE MODULE 1.6KV 310A Y1-CU
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MDD312-18N1 MDD312-18N1 IXYS media?resourcetype=datasheets&itemid=0ACDE308-88D3-49A9-8989-1A524615D7B5&filename=Littelfuse-Power-Semiconductors-MDD312-18N1-Datasheet Description: DIODE MODULE GP 1800V 310A Y1-CU
Current - Reverse Leakage @ Vr: 30 mA @ 1800 V
Voltage - Forward (Vf) (Max) @ If: 1.32 V @ 600 A
Voltage - DC Reverse (Vr) (Max): 1800 V
Operating Temperature - Junction: -40°C ~ 150°C
Supplier Device Package: Y1-CU
Current - Average Rectified (Io) (per Diode): 310A
Diode Configuration: 1 Pair Series Connection
Technology: Standard
Speed: Standard Recovery >500ns, > 200mA (Io)
Mounting Type: Chassis Mount
Package / Case: Y1-CU
Packaging: Box
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MDD312-20N1 IXYS MDD312-20N1.pdf Description: DIODE MODULE 2KV 310A Y1-CU
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MDD312-22N1 MDD312-22N1 IXYS MDD312.pdf Description: DIODE MODULE 2.2KV 310A Y1-CU
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MDD600-12N1 IXYS MDx600.pdf Description: DIODE MODULE GP 1200V 600A WC500
Current - Reverse Leakage @ Vr: 50 mA @ 1200 V
Voltage - Forward (Vf) (Max) @ If: 880 mV @ 500 A
Voltage - DC Reverse (Vr) (Max): 1200 V
Operating Temperature - Junction: -40°C ~ 150°C
Supplier Device Package: WC-500
Current - Average Rectified (Io) (per Diode): 600A
Diode Configuration: 1 Pair Series Connection
Technology: Standard
Speed: Standard Recovery >500ns, > 200mA (Io)
Mounting Type: Chassis Mount
Package / Case: WC-500
Packaging: Box
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MDD600-16N1 IXYS MDx600.pdf Description: DIODE MODULE GP 1600V 600A WC500
Package / Case: WC-500
Packaging: Box
Current - Reverse Leakage @ Vr: 50 mA @ 1600 V
Voltage - Forward (Vf) (Max) @ If: 880 mV @ 500 A
Voltage - DC Reverse (Vr) (Max): 1600 V
Operating Temperature - Junction: -40°C ~ 150°C
Supplier Device Package: WC-500
Current - Average Rectified (Io) (per Diode): 600A
Diode Configuration: 1 Pair Series Connection
Technology: Standard
Speed: Standard Recovery >500ns, > 200mA (Io)
Mounting Type: Chassis Mount
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MDD600-18N1 IXYS MDx600.pdf Description: DIODE MODULE GP 1800V 600A WC500
Current - Reverse Leakage @ Vr: 50 mA @ 1800 V
Voltage - Forward (Vf) (Max) @ If: 880 mV @ 500 A
Voltage - DC Reverse (Vr) (Max): 1800 V
Operating Temperature - Junction: -40°C ~ 150°C
Supplier Device Package: WC-500
Current - Average Rectified (Io) (per Diode): 600A
Diode Configuration: 1 Pair Series Connection
Technology: Standard
Speed: Standard Recovery >500ns, > 200mA (Io)
Mounting Type: Chassis Mount
Package / Case: WC-500
Packaging: Box
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MDI100-12A3 IXYS Description: IGBT MODULE 1200V 135A 560W Y4M5
Input Capacitance (Cies) @ Vce: 5.5 nF @ 25 V
Current - Collector Cutoff (Max): 5 mA
Power - Max: 560 W
Voltage - Collector Emitter Breakdown (Max): 1200 V
Current - Collector (Ic) (Max): 135 A
IGBT Type: NPT
Supplier Device Package: Y4-M5
NTC Thermistor: No
Vce(on) (Max) @ Vge, Ic: 2.7V @ 15V, 75A
Operating Temperature: -40°C ~ 150°C (TJ)
Configuration: Single
Input: Standard
Mounting Type: Chassis Mount
Package / Case: Y4-M5
Packaging: Box
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MDI145-12A3 MDI145-12A3 IXYS Description: IGBT MOD 1200V 160A 700W Y4-M5
Packaging: Box
Package / Case: Y4-M5
Mounting Type: Chassis Mount
Input: Standard
Configuration: Single
Operating Temperature: -40°C ~ 150°C (TJ)
Vce(on) (Max) @ Vge, Ic: 2.7V @ 15V, 100A
NTC Thermistor: No
Supplier Device Package: Y4-M5
IGBT Type: NPT
Current - Collector (Ic) (Max): 160 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Power - Max: 700 W
Current - Collector Cutoff (Max): 6 mA
Input Capacitance (Cies) @ Vce: 6.5 nF @ 25 V
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MDI150-12A4 IXYS MII150-12A4_MID150-12A4_MDI150-12A4.pdf Description: IGBT MOD 1200V 180A 760W Y3DCB
Input Capacitance (Cies) @ Vce: 6.6 nF @ 25 V
Current - Collector Cutoff (Max): 7.5 mA
Power - Max: 760 W
Voltage - Collector Emitter Breakdown (Max): 1200 V
Current - Collector (Ic) (Max): 180 A
Part Status: Active
IGBT Type: NPT
Supplier Device Package: Y3-DCB
NTC Thermistor: No
Vce(on) (Max) @ Vge, Ic: 2.7V @ 15V, 100A
Operating Temperature: 150°C (TJ)
Configuration: Single
Input: Standard
Mounting Type: Chassis Mount
Package / Case: Y3-DCB
Packaging: Box
Produkt ist nicht verfügbar
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MDI200-12A4 IXYS Description: IGBT MOD 1200V 270A 1130W Y3-DCB
Packaging: Box
Package / Case: Y3-DCB
Mounting Type: Chassis Mount
Input: Standard
Configuration: Single
Operating Temperature: 150°C (TJ)
Vce(on) (Max) @ Vge, Ic: 2.7V @ 15V, 150A
NTC Thermistor: No
Supplier Device Package: Y3-DCB
IGBT Type: NPT
Current - Collector (Ic) (Max): 270 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Power - Max: 1130 W
Current - Collector Cutoff (Max): 10 mA
Input Capacitance (Cies) @ Vce: 11 nF @ 25 V
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MDI300-12A4 IXYS Description: IGBT MOD 1200V 330A 1380W Y3-DCB
Packaging: Box
Package / Case: Y3-DCB
Mounting Type: Chassis Mount
Input: Standard
Configuration: Single
Operating Temperature: -40°C ~ 150°C (TJ)
Vce(on) (Max) @ Vge, Ic: 2.7V @ 15V, 200A
NTC Thermistor: No
Supplier Device Package: Y3-DCB
IGBT Type: NPT
Part Status: Obsolete
Current - Collector (Ic) (Max): 330 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Power - Max: 1380 W
Current - Collector Cutoff (Max): 13 mA
Input Capacitance (Cies) @ Vce: 13 nF @ 25 V
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MDI400-12E4 IXYS MII400-12E4_MID400-12E4%28T%29_MDI400-12E4.pdf Description: IGBT MOD 1200V 420A 1700W Y3LI
Packaging: Box
Package / Case: Y3-Li
Mounting Type: Chassis Mount
Input: Standard
Configuration: Single
Operating Temperature: -40°C ~ 150°C (TJ)
Vce(on) (Max) @ Vge, Ic: 2.8V @ 15V, 300A
NTC Thermistor: No
Supplier Device Package: Y3-Li
IGBT Type: NPT
Current - Collector (Ic) (Max): 420 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Power - Max: 1700 W
Current - Collector Cutoff (Max): 3.3 mA
Input Capacitance (Cies) @ Vce: 17 nF @ 25 V
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MDI550-12A4 IXYS Description: IGBT MOD 1200V 670A 2750W Y3DCB
Packaging: Box
Package / Case: Y3-DCB
Mounting Type: Chassis Mount
Input: Standard
Configuration: Single
Operating Temperature: 150°C (TJ)
Vce(on) (Max) @ Vge, Ic: 2.8V @ 15V, 400A
NTC Thermistor: No
Supplier Device Package: Y3-DCB
IGBT Type: NPT
Current - Collector (Ic) (Max): 670 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Power - Max: 2750 W
Current - Collector Cutoff (Max): 21 mA
Input Capacitance (Cies) @ Vce: 26 nF @ 25 V
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MDI75-12A3 IXYS Description: IGBT MODULE 1200V 90A 370W Y4M5
Packaging: Box
Package / Case: Y4-M5
Mounting Type: Chassis Mount
Input: Standard
Configuration: Single
Operating Temperature: -40°C ~ 150°C (TJ)
Vce(on) (Max) @ Vge, Ic: 2.7V @ 15V, 50A
NTC Thermistor: No
Supplier Device Package: Y4-M5
IGBT Type: NPT
Part Status: Obsolete
Current - Collector (Ic) (Max): 90 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Power - Max: 370 W
Current - Collector Cutoff (Max): 4 mA
Input Capacitance (Cies) @ Vce: 3.3 nF @ 25 V
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MDO500-12N1 MDO500-12N1 IXYS MDO500.pdf Description: DIODE STANDARD 1200V 560A Y1CU
Current - Reverse Leakage @ Vr: 30 mA @ 1200 V
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 1200 A
Voltage - DC Reverse (Vr) (Max): 1200 V
Supplier Device Package: Y1-CU
Current - Average Rectified (Io): 560A
Capacitance @ Vr, F: 762pF @ 400V, 1MHz
Technology: Standard
Speed: Standard Recovery >500ns, > 200mA (Io)
Mounting Type: Chassis Mount
Package / Case: Y1-CU
Packaging: Box
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MDO500-14N1 IXYS MDO500.pdf Description: DIODE GEN PURP 1.4KV 560A Y1-CU
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MDO500-16N1 IXYS MDO500.pdf Description: DIODE GEN PURP 1.6KV 560A Y1-CU
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MDO500-18N1 IXYS MDO500.pdf Description: DIODE GEN PURP 1.8KV 560A Y1-CU
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MDO500-20N1 IXYS MDO500.pdf Description: DIODE GEN PURP 2KV 560A Y1-CU
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MDO500-22N1 MDO500-22N1 IXYS MDO500.pdf Description: DIODE STANDARD 2200V 560A Y1CU
Current - Reverse Leakage @ Vr: 30 mA @ 2200 V
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 1200 A
Voltage - DC Reverse (Vr) (Max): 2200 V
Supplier Device Package: Y1-CU
Current - Average Rectified (Io): 560A
Capacitance @ Vr, F: 576pF @ 700V, 1MHz
Technology: Standard
Speed: Standard Recovery >500ns, > 200mA (Io)
Mounting Type: Chassis Mount
Package / Case: Y1-CU
Packaging: Box
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MEA250-12DA IXYS 96514.pdf Description: DIODE MODULE 1.2KV 260A Y4-M6
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MEA300-06DA IXYS 96512.pdf Description: DIODE MODULE 600V 304A Y4-M6
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MEE250-12DA MEE250-12DA IXYS ME%28A%2CE%2CK%29250-12DA.pdf Description: DIODE MODULE GP 1200V 260A Y4-M6
Packaging: Box
Package / Case: Y4-M6
Mounting Type: Chassis Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 500 ns
Technology: Standard
Diode Configuration: 1 Pair Series Connection
Current - Average Rectified (Io) (per Diode): 260A
Supplier Device Package: Y4-M6
Operating Temperature - Junction: -40°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 1200 V
Voltage - Forward (Vf) (Max) @ If: 1.8 V @ 260 A
Current - Reverse Leakage @ Vr: 12 mA @ 1200 V
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MEE300-06DA MEE300-06DA IXYS MEA-MEK-MEE_300-06DA.PDF Description: DIODE MODULE GP 600V 304A Y4-M6
Packaging: Box
Package / Case: Y4-M6
Mounting Type: Chassis Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 300 ns
Technology: Standard
Diode Configuration: 1 Pair Series Connection
Current - Average Rectified (Io) (per Diode): 304A
Supplier Device Package: Y4-M6
Operating Temperature - Junction: -40°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 1.36 V @ 260 A
Current - Reverse Leakage @ Vr: 12 mA @ 600 V
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MEK250-12DA MEK250-12DA IXYS ME%28A%2CE%2CK%29250-12DA.pdf Description: DIODE MODULE GP 1200V 260A Y4-M6
Packaging: Box
Package / Case: Y4-M6
Mounting Type: Chassis Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 500 ns
Technology: Standard
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 260A
Supplier Device Package: Y4-M6
Operating Temperature - Junction: -40°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 1200 V
Voltage - Forward (Vf) (Max) @ If: 1.8 V @ 260 A
Current - Reverse Leakage @ Vr: 12 mA @ 1200 V
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MEK300-06DA MEK300-06DA IXYS 96512.pdf Description: DIODE MODULE 600V 304A Y4-M6
Packaging: Box
Package / Case: Y4-M6
Mounting Type: Chassis Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 300 ns
Technology: Standard
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 304A
Supplier Device Package: Y4-M6
Operating Temperature - Junction: -40°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 1.36 V @ 260 A
Current - Reverse Leakage @ Vr: 12 mA @ 600 V
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MEK600-04DA IXYS L581.pdf Description: DIODE MODULE 400V 880A Y4-M6
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MEO450-12DA MEO450-12DA IXYS Littelfuse-Power-Semiconductors-MEO450-12DA-Datasheet?assetguid=4e46dcbd-55a7-484c-99eb-79efd9865723 Description: DIODE STANDARD 1200V 453A Y4M6
Current - Reverse Leakage @ Vr: 24 mA @ 1200 V
Voltage - Forward (Vf) (Max) @ If: 1.96 V @ 520 A
Voltage - DC Reverse (Vr) (Max): 1200 V
Operating Temperature - Junction: -40°C ~ 150°C
Supplier Device Package: Y4-M6
Current - Average Rectified (Io): 453A
Technology: Standard
Reverse Recovery Time (trr): 500 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Chassis Mount
Package / Case: Y4-M6
Packaging: Box
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MEO500-06DA MEO500-06DA IXYS Littelfuse-Power-Semiconductors-MEO500-06DA-Datasheet?assetguid=97de4913-c790-4a13-a866-efc372c70f9c Description: DIODE STANDARD 600V 514A Y4M6
Technology: Standard
Reverse Recovery Time (trr): 300 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Chassis Mount
Package / Case: Y4-M6
Packaging: Box
Current - Reverse Leakage @ Vr: 24 mA @ 600 V
Voltage - Forward (Vf) (Max) @ If: 1.52 V @ 520 A
Voltage - DC Reverse (Vr) (Max): 600 V
Part Status: Active
Operating Temperature - Junction: -40°C ~ 150°C
Supplier Device Package: Y4-M6
Current - Average Rectified (Io): 514A
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MID100-12A3 IXYS Description: IGBT MODULE 1200V 135A 560W Y4M5
Input Capacitance (Cies) @ Vce: 5.5 nF @ 25 V
Current - Collector Cutoff (Max): 5 mA
Power - Max: 560 W
Voltage - Collector Emitter Breakdown (Max): 1200 V
Current - Collector (Ic) (Max): 135 A
IGBT Type: NPT
Supplier Device Package: Y4-M5
NTC Thermistor: No
Vce(on) (Max) @ Vge, Ic: 2.7V @ 15V, 75A
Operating Temperature: -40°C ~ 150°C (TJ)
Configuration: Single
Input: Standard
Mounting Type: Chassis Mount
Package / Case: Y4-M5
Packaging: Box
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MID145-12A3 IXYS Description: IGBT MOD 1200V 160A 700W Y4-M5
Packaging: Box
Package / Case: Y4-M5
Mounting Type: Chassis Mount
Input: Standard
Configuration: Single
Operating Temperature: -40°C ~ 150°C (TJ)
Vce(on) (Max) @ Vge, Ic: 2.7V @ 15V, 100A
NTC Thermistor: No
Supplier Device Package: Y4-M5
IGBT Type: NPT
Current - Collector (Ic) (Max): 160 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Power - Max: 700 W
Current - Collector Cutoff (Max): 6 mA
Input Capacitance (Cies) @ Vce: 6.5 nF @ 25 V
Produkt ist nicht verfügbar
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MID150-12A4 IXYS MII150-12A4_MID150-12A4_MDI150-12A4.pdf Description: IGBT MOD 1200V 180A 760W Y3DCB
Current - Collector Cutoff (Max): 7.5 mA
Power - Max: 760 W
Voltage - Collector Emitter Breakdown (Max): 1200 V
Current - Collector (Ic) (Max): 180 A
IGBT Type: NPT
Supplier Device Package: Y3-DCB
NTC Thermistor: No
Vce(on) (Max) @ Vge, Ic: 2.7V @ 15V, 100A
Operating Temperature: 150°C (TJ)
Configuration: Single
Input: Standard
Mounting Type: Chassis Mount
Package / Case: Y3-DCB
Packaging: Box
Input Capacitance (Cies) @ Vce: 6.6 nF @ 25 V
Produkt ist nicht verfügbar
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MID200-12A4 IXYS Description: IGBT MOD 1200V 270A 1130W Y3-DCB
Input Capacitance (Cies) @ Vce: 11 nF @ 25 V
Current - Collector Cutoff (Max): 10 mA
Power - Max: 1130 W
Voltage - Collector Emitter Breakdown (Max): 1200 V
Current - Collector (Ic) (Max): 270 A
Part Status: Active
IGBT Type: NPT
Supplier Device Package: Y3-DCB
NTC Thermistor: No
Vce(on) (Max) @ Vge, Ic: 2.7V @ 15V, 150A
Operating Temperature: 150°C (TJ)
Configuration: Single
Input: Standard
Mounting Type: Chassis Mount
Package / Case: Y3-DCB
Packaging: Box
Produkt ist nicht verfügbar
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MID300-12A4 IXYS Description: IGBT MOD 1200V 330A 1380W Y3DCB
Input Capacitance (Cies) @ Vce: 13 nF @ 25 V
Current - Collector Cutoff (Max): 13 mA
Power - Max: 1380 W
Voltage - Collector Emitter Breakdown (Max): 1200 V
Current - Collector (Ic) (Max): 330 A
Part Status: Active
IGBT Type: NPT
Supplier Device Package: Y3-DCB
NTC Thermistor: No
Vce(on) (Max) @ Vge, Ic: 2.7V @ 15V, 200A
Operating Temperature: -40°C ~ 150°C (TJ)
Configuration: Single
Input: Standard
Mounting Type: Chassis Mount
Package / Case: Y3-DCB
Packaging: Box
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MID400-12E4 IXYS MII400-12E4_MID400-12E4%28T%29_MDI400-12E4.pdf Description: IGBT MOD 1200V 420A 1700W Y3-LI
Input Capacitance (Cies) @ Vce: 17 nF @ 25 V
Current - Collector Cutoff (Max): 3.3 mA
Power - Max: 1700 W
Voltage - Collector Emitter Breakdown (Max): 1200 V
Current - Collector (Ic) (Max): 420 A
IGBT Type: NPT
Supplier Device Package: Y3-Li
NTC Thermistor: No
Vce(on) (Max) @ Vge, Ic: 2.8V @ 15V, 300A
Operating Temperature: -40°C ~ 150°C (TJ)
Configuration: Single
Input: Standard
Mounting Type: Chassis Mount
Package / Case: Y3-Li
Packaging: Box
Produkt ist nicht verfügbar
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MID400-12E4T IXYS MII400-12E4_MID400-12E4%28T%29_MDI400-12E4.pdf Description: IGBT MOD 1200V 420A 1700W Y3-LI
NTC Thermistor: Yes
Vce(on) (Max) @ Vge, Ic: 2.8V @ 15V, 300A
Operating Temperature: -40°C ~ 150°C (TJ)
Configuration: Single
Input: Standard
Mounting Type: Chassis Mount
Package / Case: Y3-Li
Packaging: Box
Input Capacitance (Cies) @ Vce: 17 nF @ 25 V
Current - Collector Cutoff (Max): 3.3 mA
Power - Max: 1700 W
Voltage - Collector Emitter Breakdown (Max): 1200 V
Current - Collector (Ic) (Max): 420 A
IGBT Type: NPT
Supplier Device Package: Y3-Li
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MID550-12A4 IXYS Description: IGBT MOD 1200V 670A 2750W Y3DCB
Input Capacitance (Cies) @ Vce: 26 nF @ 25 V
Current - Collector Cutoff (Max): 21 mA
Power - Max: 2750 W
Voltage - Collector Emitter Breakdown (Max): 1200 V
Current - Collector (Ic) (Max): 670 A
IGBT Type: NPT
Supplier Device Package: Y3-DCB
NTC Thermistor: No
Vce(on) (Max) @ Vge, Ic: 2.8V @ 15V, 400A
Operating Temperature: 150°C (TJ)
Configuration: Single
Input: Standard
Mounting Type: Chassis Mount
Package / Case: Y3-DCB
Packaging: Box
Produkt ist nicht verfügbar
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MID75-12A3 IXYS Description: IGBT MODULE 1200V 90A 370W Y4M5
Input Capacitance (Cies) @ Vce: 3.3 nF @ 25 V
Current - Collector Cutoff (Max): 4 mA
Power - Max: 370 W
Voltage - Collector Emitter Breakdown (Max): 1200 V
Current - Collector (Ic) (Max): 90 A
Part Status: Obsolete
IGBT Type: NPT
Supplier Device Package: Y4-M5
NTC Thermistor: No
Vce(on) (Max) @ Vge, Ic: 2.7V @ 15V, 50A
Operating Temperature: -40°C ~ 150°C (TJ)
Configuration: Single
Input: Standard
Mounting Type: Chassis Mount
Package / Case: Y4-M5
Packaging: Box
Produkt ist nicht verfügbar
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MII145-12A3 IXYS Description: IGBT MOD 1200V 160A 700W Y4-M5
Packaging: Box
Package / Case: Y4-M5
Mounting Type: Chassis Mount
Input: Standard
Configuration: Half Bridge
Operating Temperature: -40°C ~ 150°C (TJ)
Vce(on) (Max) @ Vge, Ic: 2.7V @ 15V, 100A
NTC Thermistor: No
Supplier Device Package: Y4-M5
IGBT Type: NPT
Current - Collector (Ic) (Max): 160 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Power - Max: 700 W
Current - Collector Cutoff (Max): 6 mA
Input Capacitance (Cies) @ Vce: 6.5 nF @ 25 V
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MII150-12A4 IXYS MII150-12A4_MID150-12A4_MDI150-12A4.pdf Description: MOD IGBT RBSOA 1200V 180A Y3-DCB
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MII200-12A4 IXYS Description: IGBT MOD 1200V 270A 1130W Y3-DCB
Packaging: Box
Package / Case: Y3-DCB
Mounting Type: Chassis Mount
Input: Standard
Configuration: Half Bridge
Operating Temperature: 150°C (TJ)
Vce(on) (Max) @ Vge, Ic: 2.7V @ 15V, 150A
NTC Thermistor: No
Supplier Device Package: Y3-DCB
IGBT Type: NPT
Current - Collector (Ic) (Max): 270 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Power - Max: 1130 W
Current - Collector Cutoff (Max): 10 mA
Input Capacitance (Cies) @ Vce: 11 nF @ 25 V
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MII300-12A4 IXYS Description: IGBT MOD 1200V 330A 1380W Y3DCB
Input Capacitance (Cies) @ Vce: 13 nF @ 25 V
Current - Collector Cutoff (Max): 13 mA
Power - Max: 1380 W
Voltage - Collector Emitter Breakdown (Max): 1200 V
Current - Collector (Ic) (Max): 330 A
Part Status: Active
IGBT Type: NPT
Supplier Device Package: Y3-DCB
NTC Thermistor: No
Vce(on) (Max) @ Vge, Ic: 2.7V @ 15V, 200A
Operating Temperature: -40°C ~ 150°C (TJ)
Configuration: Half Bridge
Input: Standard
Mounting Type: Chassis Mount
Package / Case: Y3-DCB
Packaging: Box
Produkt ist nicht verfügbar
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MII75-12A3 IXYS Description: IGBT MODULE 1200V 90A 370W Y4M5
Input Capacitance (Cies) @ Vce: 3.3 nF @ 25 V
Current - Collector Cutoff (Max): 4 mA
Power - Max: 370 W
Voltage - Collector Emitter Breakdown (Max): 1200 V
Current - Collector (Ic) (Max): 90 A
Part Status: Obsolete
IGBT Type: NPT
Supplier Device Package: Y4-M5
NTC Thermistor: No
Vce(on) (Max) @ Vge, Ic: 2.7V @ 15V, 50A
Operating Temperature: -40°C ~ 150°C (TJ)
Configuration: Half Bridge
Input: Standard
Mounting Type: Chassis Mount
Package / Case: Y4-M5
Packaging: Box
Produkt ist nicht verfügbar
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MIO 600-65E11 IXYS MIO%20600-65E11.pdf Description: MOD IGBT SGL SWITCH 6500V E11
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MIO1200-25E10 IXYS MIO1200-25E10.pdf Description: IGBT MODULE 2500V 1200A E10
Input Capacitance (Cies) @ Vce: 186 nF @ 25 V
Current - Collector Cutoff (Max): 120 mA
Voltage - Collector Emitter Breakdown (Max): 2500 V
Current - Collector (Ic) (Max): 1200 A
Part Status: Obsolete
IGBT Type: NPT
Supplier Device Package: E10
NTC Thermistor: No
Vce(on) (Max) @ Vge, Ic: 2.5V @ 15V, 1200A
Operating Temperature: -40°C ~ 125°C (TJ)
Configuration: Single Switch
Input: Standard
Mounting Type: Chassis Mount
Package / Case: E10
Packaging: Box
Produkt ist nicht verfügbar
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MIO1200-33E10 IXYS MIO1200-33E10.pdf Description: IGBT MODULE 3300V 1200A E10
Package / Case: E10
Packaging: Box
Input Capacitance (Cies) @ Vce: 187 nF @ 25 V
Current - Collector Cutoff (Max): 120 mA
Voltage - Collector Emitter Breakdown (Max): 3300 V
Current - Collector (Ic) (Max): 1200 A
Part Status: Active
IGBT Type: NPT
Supplier Device Package: E10
NTC Thermistor: No
Vce(on) (Max) @ Vge, Ic: 3.1V @ 15V, 1200A
Operating Temperature: -40°C ~ 125°C (TJ)
Configuration: Single Switch
Input: Standard
Mounting Type: Chassis Mount
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MIO1800-17E10 IXYS MIO1800-17E10.pdf Description: IGBT MODULE 1700V 1800A E10
Input Capacitance (Cies) @ Vce: 166 nF @ 25 V
Current - Collector Cutoff (Max): 120 mA
Voltage - Collector Emitter Breakdown (Max): 1700 V
Current - Collector (Ic) (Max): 1800 A
Part Status: Obsolete
IGBT Type: NPT
Supplier Device Package: E10
NTC Thermistor: No
Vce(on) (Max) @ Vge, Ic: 2.6V @ 15V, 1800A
Operating Temperature: -40°C ~ 125°C (TJ)
Configuration: Single Switch
Input: Standard
Mounting Type: Chassis Mount
Package / Case: E10
Packaging: Box
Produkt ist nicht verfügbar
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MDD255-20N1 media?resourcetype=datasheets&itemid=1CB2149A-671B-402D-AF9A-E6290574C9B6&filename=Littelfuse-Power-Semiconductors-MDD255-20N1-Datasheet
Hersteller: IXYS
Description: DIODE MODULE GP 2000V 270A Y1-CU
Current - Reverse Leakage @ Vr: 30 mA @ 2000 V
Voltage - Forward (Vf) (Max) @ If: 1.4 V @ 600 A
Voltage - DC Reverse (Vr) (Max): 2000 V
Operating Temperature - Junction: -40°C ~ 150°C
Supplier Device Package: Y1-CU
Current - Average Rectified (Io) (per Diode): 270A
Diode Configuration: 1 Pair Series Connection
Technology: Standard
Speed: Standard Recovery >500ns, > 200mA (Io)
Mounting Type: Chassis Mount
Package / Case: Y1-CU
Packaging: Box
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MDD255-22N1 media?resourcetype=datasheets&itemid=D396DFBE-7F86-4634-A5CD-A3ABCB546C2E&filename=Littelfuse-Power-Semiconductors-MDD255-22N1-Datasheet
MDD255-22N1
Hersteller: IXYS
Description: DIODE MODULE GP 2200V 270A Y1-CU
Operating Temperature - Junction: -40°C ~ 150°C
Supplier Device Package: Y1-CU
Current - Average Rectified (Io) (per Diode): 270A
Diode Configuration: 1 Pair Series Connection
Technology: Standard
Speed: Standard Recovery >500ns, > 200mA (Io)
Mounting Type: Chassis Mount
Package / Case: Y1-CU
Packaging: Box
Current - Reverse Leakage @ Vr: 30 mA @ 2200 V
Voltage - Forward (Vf) (Max) @ If: 1.4 V @ 600 A
Voltage - DC Reverse (Vr) (Max): 2200 V
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MDD26-12N1B MDD26-12N1B.pdf
MDD26-12N1B
Hersteller: IXYS
Description: DIODE MODULE 1.2KV 36A TO240AA
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MDD310-08N1 MDD310-08N1.pdf
Hersteller: IXYS
Description: DIODE MODULE GP 800V 305A Y2-DCB
Current - Reverse Leakage @ Vr: 40 mA @ 800 V
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 600 A
Voltage - DC Reverse (Vr) (Max): 800 V
Operating Temperature - Junction: -40°C ~ 150°C
Supplier Device Package: Y2-DCB
Current - Average Rectified (Io) (per Diode): 305A
Diode Configuration: 1 Pair Series Connection
Technology: Standard
Speed: Standard Recovery >500ns, > 200mA (Io)
Mounting Type: Chassis Mount
Package / Case: Y2-DCB
Packaging: Box
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MDD310-12N1 MDD310.pdf
Hersteller: IXYS
Description: DIODE MOD GP 1.2KV 305A Y2-DCB
Packaging: Box
Package / Case: Y2-DCB
Mounting Type: Chassis Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard
Diode Configuration: 1 Pair Series Connection
Current - Average Rectified (Io) (per Diode): 305A
Supplier Device Package: Y2-DCB
Operating Temperature - Junction: -40°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 1200 V
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 600 A
Current - Reverse Leakage @ Vr: 40 mA @ 1200 V
Produkt ist nicht verfügbar
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MDD310-14N1 MDD310.pdf
Hersteller: IXYS
Description: DIODE MOD GP 1.4KV 305A Y2-DCB
Packaging: Box
Package / Case: Y2-DCB
Mounting Type: Chassis Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard
Diode Configuration: 1 Pair Series Connection
Current - Average Rectified (Io) (per Diode): 305A
Supplier Device Package: Y2-DCB
Operating Temperature - Junction: -40°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 1400 V
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 600 A
Current - Reverse Leakage @ Vr: 40 mA @ 1400 V
Produkt ist nicht verfügbar
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MDD310-16N1 MDD310.pdf
MDD310-16N1
Hersteller: IXYS
Description: DIODE MOD GP 1.6KV 305A Y2-DCB
Packaging: Box
Package / Case: Y2-DCB
Mounting Type: Chassis Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard
Diode Configuration: 1 Pair Series Connection
Current - Average Rectified (Io) (per Diode): 305A
Supplier Device Package: Y2-DCB
Operating Temperature - Junction: -40°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 1600 V
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 600 A
Current - Reverse Leakage @ Vr: 40 mA @ 1600 V
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MDD310-18N1 MDD310.pdf
Hersteller: IXYS
Description: DIODE MOD GP 1800V 305A Y2-DCB
Packaging: Box
Package / Case: Y2-DCB
Mounting Type: Chassis Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard
Diode Configuration: 1 Pair Series Connection
Current - Average Rectified (Io) (per Diode): 305A
Supplier Device Package: Y2-DCB
Operating Temperature - Junction: -40°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 1800 V
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 600 A
Current - Reverse Leakage @ Vr: 40 mA @ 1800 V
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MDD310-20N1 MDD310.pdf
Hersteller: IXYS
Description: DIODE MOD GP 2000V 305A Y2-DCB
Packaging: Box
Package / Case: Y2-DCB
Mounting Type: Chassis Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard
Diode Configuration: 1 Pair Series Connection
Current - Average Rectified (Io) (per Diode): 305A
Supplier Device Package: Y2-DCB
Operating Temperature - Junction: -40°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 2000 V
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 600 A
Current - Reverse Leakage @ Vr: 40 mA @ 2000 V
Produkt ist nicht verfügbar
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MDD310-22N1 MDD310.pdf
Hersteller: IXYS
Description: DIODE MOD GP 2.2KV 305A Y2-DCB
Packaging: Box
Package / Case: Y2-DCB
Mounting Type: Chassis Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard
Diode Configuration: 1 Pair Series Connection
Current - Average Rectified (Io) (per Diode): 305A
Supplier Device Package: Y2-DCB
Operating Temperature - Junction: -40°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 2200 V
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 600 A
Current - Reverse Leakage @ Vr: 40 mA @ 2200 V
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2+239.82 EUR
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MDD312-12N1 IXYS_Selectorguide_2015.pdf#page=97
Hersteller: IXYS
Description: DIODE MODULE 1.2KV 310A Y1-CU
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MDD312-14N1 MDD312.pdf
Hersteller: IXYS
Description: DIODE MODULE 1.4KV 310A Y1-CU
Produkt ist nicht verfügbar
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MDD312-16N1 MDD312-16N1.pdf
MDD312-16N1
Hersteller: IXYS
Description: DIODE MODULE 1.6KV 310A Y1-CU
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MDD312-18N1 media?resourcetype=datasheets&itemid=0ACDE308-88D3-49A9-8989-1A524615D7B5&filename=Littelfuse-Power-Semiconductors-MDD312-18N1-Datasheet
MDD312-18N1
Hersteller: IXYS
Description: DIODE MODULE GP 1800V 310A Y1-CU
Current - Reverse Leakage @ Vr: 30 mA @ 1800 V
Voltage - Forward (Vf) (Max) @ If: 1.32 V @ 600 A
Voltage - DC Reverse (Vr) (Max): 1800 V
Operating Temperature - Junction: -40°C ~ 150°C
Supplier Device Package: Y1-CU
Current - Average Rectified (Io) (per Diode): 310A
Diode Configuration: 1 Pair Series Connection
Technology: Standard
Speed: Standard Recovery >500ns, > 200mA (Io)
Mounting Type: Chassis Mount
Package / Case: Y1-CU
Packaging: Box
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MDD312-20N1 MDD312-20N1.pdf
Hersteller: IXYS
Description: DIODE MODULE 2KV 310A Y1-CU
Produkt ist nicht verfügbar
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MDD312-22N1 MDD312.pdf
MDD312-22N1
Hersteller: IXYS
Description: DIODE MODULE 2.2KV 310A Y1-CU
Produkt ist nicht verfügbar
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MDD600-12N1 MDx600.pdf
Hersteller: IXYS
Description: DIODE MODULE GP 1200V 600A WC500
Current - Reverse Leakage @ Vr: 50 mA @ 1200 V
Voltage - Forward (Vf) (Max) @ If: 880 mV @ 500 A
Voltage - DC Reverse (Vr) (Max): 1200 V
Operating Temperature - Junction: -40°C ~ 150°C
Supplier Device Package: WC-500
Current - Average Rectified (Io) (per Diode): 600A
Diode Configuration: 1 Pair Series Connection
Technology: Standard
Speed: Standard Recovery >500ns, > 200mA (Io)
Mounting Type: Chassis Mount
Package / Case: WC-500
Packaging: Box
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MDD600-16N1 MDx600.pdf
Hersteller: IXYS
Description: DIODE MODULE GP 1600V 600A WC500
Package / Case: WC-500
Packaging: Box
Current - Reverse Leakage @ Vr: 50 mA @ 1600 V
Voltage - Forward (Vf) (Max) @ If: 880 mV @ 500 A
Voltage - DC Reverse (Vr) (Max): 1600 V
Operating Temperature - Junction: -40°C ~ 150°C
Supplier Device Package: WC-500
Current - Average Rectified (Io) (per Diode): 600A
Diode Configuration: 1 Pair Series Connection
Technology: Standard
Speed: Standard Recovery >500ns, > 200mA (Io)
Mounting Type: Chassis Mount
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MDD600-18N1 MDx600.pdf
Hersteller: IXYS
Description: DIODE MODULE GP 1800V 600A WC500
Current - Reverse Leakage @ Vr: 50 mA @ 1800 V
Voltage - Forward (Vf) (Max) @ If: 880 mV @ 500 A
Voltage - DC Reverse (Vr) (Max): 1800 V
Operating Temperature - Junction: -40°C ~ 150°C
Supplier Device Package: WC-500
Current - Average Rectified (Io) (per Diode): 600A
Diode Configuration: 1 Pair Series Connection
Technology: Standard
Speed: Standard Recovery >500ns, > 200mA (Io)
Mounting Type: Chassis Mount
Package / Case: WC-500
Packaging: Box
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MDI100-12A3
Hersteller: IXYS
Description: IGBT MODULE 1200V 135A 560W Y4M5
Input Capacitance (Cies) @ Vce: 5.5 nF @ 25 V
Current - Collector Cutoff (Max): 5 mA
Power - Max: 560 W
Voltage - Collector Emitter Breakdown (Max): 1200 V
Current - Collector (Ic) (Max): 135 A
IGBT Type: NPT
Supplier Device Package: Y4-M5
NTC Thermistor: No
Vce(on) (Max) @ Vge, Ic: 2.7V @ 15V, 75A
Operating Temperature: -40°C ~ 150°C (TJ)
Configuration: Single
Input: Standard
Mounting Type: Chassis Mount
Package / Case: Y4-M5
Packaging: Box
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MDI145-12A3
MDI145-12A3
Hersteller: IXYS
Description: IGBT MOD 1200V 160A 700W Y4-M5
Packaging: Box
Package / Case: Y4-M5
Mounting Type: Chassis Mount
Input: Standard
Configuration: Single
Operating Temperature: -40°C ~ 150°C (TJ)
Vce(on) (Max) @ Vge, Ic: 2.7V @ 15V, 100A
NTC Thermistor: No
Supplier Device Package: Y4-M5
IGBT Type: NPT
Current - Collector (Ic) (Max): 160 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Power - Max: 700 W
Current - Collector Cutoff (Max): 6 mA
Input Capacitance (Cies) @ Vce: 6.5 nF @ 25 V
Produkt ist nicht verfügbar
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MDI150-12A4 MII150-12A4_MID150-12A4_MDI150-12A4.pdf
Hersteller: IXYS
Description: IGBT MOD 1200V 180A 760W Y3DCB
Input Capacitance (Cies) @ Vce: 6.6 nF @ 25 V
Current - Collector Cutoff (Max): 7.5 mA
Power - Max: 760 W
Voltage - Collector Emitter Breakdown (Max): 1200 V
Current - Collector (Ic) (Max): 180 A
Part Status: Active
IGBT Type: NPT
Supplier Device Package: Y3-DCB
NTC Thermistor: No
Vce(on) (Max) @ Vge, Ic: 2.7V @ 15V, 100A
Operating Temperature: 150°C (TJ)
Configuration: Single
Input: Standard
Mounting Type: Chassis Mount
Package / Case: Y3-DCB
Packaging: Box
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MDI200-12A4
Hersteller: IXYS
Description: IGBT MOD 1200V 270A 1130W Y3-DCB
Packaging: Box
Package / Case: Y3-DCB
Mounting Type: Chassis Mount
Input: Standard
Configuration: Single
Operating Temperature: 150°C (TJ)
Vce(on) (Max) @ Vge, Ic: 2.7V @ 15V, 150A
NTC Thermistor: No
Supplier Device Package: Y3-DCB
IGBT Type: NPT
Current - Collector (Ic) (Max): 270 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Power - Max: 1130 W
Current - Collector Cutoff (Max): 10 mA
Input Capacitance (Cies) @ Vce: 11 nF @ 25 V
Produkt ist nicht verfügbar
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MDI300-12A4
Hersteller: IXYS
Description: IGBT MOD 1200V 330A 1380W Y3-DCB
Packaging: Box
Package / Case: Y3-DCB
Mounting Type: Chassis Mount
Input: Standard
Configuration: Single
Operating Temperature: -40°C ~ 150°C (TJ)
Vce(on) (Max) @ Vge, Ic: 2.7V @ 15V, 200A
NTC Thermistor: No
Supplier Device Package: Y3-DCB
IGBT Type: NPT
Part Status: Obsolete
Current - Collector (Ic) (Max): 330 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Power - Max: 1380 W
Current - Collector Cutoff (Max): 13 mA
Input Capacitance (Cies) @ Vce: 13 nF @ 25 V
Produkt ist nicht verfügbar
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MDI400-12E4 MII400-12E4_MID400-12E4%28T%29_MDI400-12E4.pdf
Hersteller: IXYS
Description: IGBT MOD 1200V 420A 1700W Y3LI
Packaging: Box
Package / Case: Y3-Li
Mounting Type: Chassis Mount
Input: Standard
Configuration: Single
Operating Temperature: -40°C ~ 150°C (TJ)
Vce(on) (Max) @ Vge, Ic: 2.8V @ 15V, 300A
NTC Thermistor: No
Supplier Device Package: Y3-Li
IGBT Type: NPT
Current - Collector (Ic) (Max): 420 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Power - Max: 1700 W
Current - Collector Cutoff (Max): 3.3 mA
Input Capacitance (Cies) @ Vce: 17 nF @ 25 V
Produkt ist nicht verfügbar
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MDI550-12A4
Hersteller: IXYS
Description: IGBT MOD 1200V 670A 2750W Y3DCB
Packaging: Box
Package / Case: Y3-DCB
Mounting Type: Chassis Mount
Input: Standard
Configuration: Single
Operating Temperature: 150°C (TJ)
Vce(on) (Max) @ Vge, Ic: 2.8V @ 15V, 400A
NTC Thermistor: No
Supplier Device Package: Y3-DCB
IGBT Type: NPT
Current - Collector (Ic) (Max): 670 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Power - Max: 2750 W
Current - Collector Cutoff (Max): 21 mA
Input Capacitance (Cies) @ Vce: 26 nF @ 25 V
Produkt ist nicht verfügbar
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MDI75-12A3
Hersteller: IXYS
Description: IGBT MODULE 1200V 90A 370W Y4M5
Packaging: Box
Package / Case: Y4-M5
Mounting Type: Chassis Mount
Input: Standard
Configuration: Single
Operating Temperature: -40°C ~ 150°C (TJ)
Vce(on) (Max) @ Vge, Ic: 2.7V @ 15V, 50A
NTC Thermistor: No
Supplier Device Package: Y4-M5
IGBT Type: NPT
Part Status: Obsolete
Current - Collector (Ic) (Max): 90 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Power - Max: 370 W
Current - Collector Cutoff (Max): 4 mA
Input Capacitance (Cies) @ Vce: 3.3 nF @ 25 V
Produkt ist nicht verfügbar
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MDO500-12N1 MDO500.pdf
MDO500-12N1
Hersteller: IXYS
Description: DIODE STANDARD 1200V 560A Y1CU
Current - Reverse Leakage @ Vr: 30 mA @ 1200 V
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 1200 A
Voltage - DC Reverse (Vr) (Max): 1200 V
Supplier Device Package: Y1-CU
Current - Average Rectified (Io): 560A
Capacitance @ Vr, F: 762pF @ 400V, 1MHz
Technology: Standard
Speed: Standard Recovery >500ns, > 200mA (Io)
Mounting Type: Chassis Mount
Package / Case: Y1-CU
Packaging: Box
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10+231.05 EUR
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MDO500-14N1 MDO500.pdf
Hersteller: IXYS
Description: DIODE GEN PURP 1.4KV 560A Y1-CU
Produkt ist nicht verfügbar
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MDO500-16N1 MDO500.pdf
Hersteller: IXYS
Description: DIODE GEN PURP 1.6KV 560A Y1-CU
Produkt ist nicht verfügbar
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MDO500-18N1 MDO500.pdf
Hersteller: IXYS
Description: DIODE GEN PURP 1.8KV 560A Y1-CU
Produkt ist nicht verfügbar
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MDO500-20N1 MDO500.pdf
Hersteller: IXYS
Description: DIODE GEN PURP 2KV 560A Y1-CU
Produkt ist nicht verfügbar
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MDO500-22N1 MDO500.pdf
MDO500-22N1
Hersteller: IXYS
Description: DIODE STANDARD 2200V 560A Y1CU
Current - Reverse Leakage @ Vr: 30 mA @ 2200 V
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 1200 A
Voltage - DC Reverse (Vr) (Max): 2200 V
Supplier Device Package: Y1-CU
Current - Average Rectified (Io): 560A
Capacitance @ Vr, F: 576pF @ 700V, 1MHz
Technology: Standard
Speed: Standard Recovery >500ns, > 200mA (Io)
Mounting Type: Chassis Mount
Package / Case: Y1-CU
Packaging: Box
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MEA250-12DA 96514.pdf
Hersteller: IXYS
Description: DIODE MODULE 1.2KV 260A Y4-M6
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MEA300-06DA 96512.pdf
Hersteller: IXYS
Description: DIODE MODULE 600V 304A Y4-M6
Produkt ist nicht verfügbar
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MEE250-12DA ME%28A%2CE%2CK%29250-12DA.pdf
MEE250-12DA
Hersteller: IXYS
Description: DIODE MODULE GP 1200V 260A Y4-M6
Packaging: Box
Package / Case: Y4-M6
Mounting Type: Chassis Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 500 ns
Technology: Standard
Diode Configuration: 1 Pair Series Connection
Current - Average Rectified (Io) (per Diode): 260A
Supplier Device Package: Y4-M6
Operating Temperature - Junction: -40°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 1200 V
Voltage - Forward (Vf) (Max) @ If: 1.8 V @ 260 A
Current - Reverse Leakage @ Vr: 12 mA @ 1200 V
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MEE300-06DA MEA-MEK-MEE_300-06DA.PDF
MEE300-06DA
Hersteller: IXYS
Description: DIODE MODULE GP 600V 304A Y4-M6
Packaging: Box
Package / Case: Y4-M6
Mounting Type: Chassis Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 300 ns
Technology: Standard
Diode Configuration: 1 Pair Series Connection
Current - Average Rectified (Io) (per Diode): 304A
Supplier Device Package: Y4-M6
Operating Temperature - Junction: -40°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 1.36 V @ 260 A
Current - Reverse Leakage @ Vr: 12 mA @ 600 V
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MEK250-12DA ME%28A%2CE%2CK%29250-12DA.pdf
MEK250-12DA
Hersteller: IXYS
Description: DIODE MODULE GP 1200V 260A Y4-M6
Packaging: Box
Package / Case: Y4-M6
Mounting Type: Chassis Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 500 ns
Technology: Standard
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 260A
Supplier Device Package: Y4-M6
Operating Temperature - Junction: -40°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 1200 V
Voltage - Forward (Vf) (Max) @ If: 1.8 V @ 260 A
Current - Reverse Leakage @ Vr: 12 mA @ 1200 V
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MEK300-06DA 96512.pdf
MEK300-06DA
Hersteller: IXYS
Description: DIODE MODULE 600V 304A Y4-M6
Packaging: Box
Package / Case: Y4-M6
Mounting Type: Chassis Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 300 ns
Technology: Standard
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 304A
Supplier Device Package: Y4-M6
Operating Temperature - Junction: -40°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 1.36 V @ 260 A
Current - Reverse Leakage @ Vr: 12 mA @ 600 V
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MEK600-04DA L581.pdf
Hersteller: IXYS
Description: DIODE MODULE 400V 880A Y4-M6
Produkt ist nicht verfügbar
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MEO450-12DA Littelfuse-Power-Semiconductors-MEO450-12DA-Datasheet?assetguid=4e46dcbd-55a7-484c-99eb-79efd9865723
MEO450-12DA
Hersteller: IXYS
Description: DIODE STANDARD 1200V 453A Y4M6
Current - Reverse Leakage @ Vr: 24 mA @ 1200 V
Voltage - Forward (Vf) (Max) @ If: 1.96 V @ 520 A
Voltage - DC Reverse (Vr) (Max): 1200 V
Operating Temperature - Junction: -40°C ~ 150°C
Supplier Device Package: Y4-M6
Current - Average Rectified (Io): 453A
Technology: Standard
Reverse Recovery Time (trr): 500 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Chassis Mount
Package / Case: Y4-M6
Packaging: Box
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MEO500-06DA Littelfuse-Power-Semiconductors-MEO500-06DA-Datasheet?assetguid=97de4913-c790-4a13-a866-efc372c70f9c
MEO500-06DA
Hersteller: IXYS
Description: DIODE STANDARD 600V 514A Y4M6
Technology: Standard
Reverse Recovery Time (trr): 300 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Chassis Mount
Package / Case: Y4-M6
Packaging: Box
Current - Reverse Leakage @ Vr: 24 mA @ 600 V
Voltage - Forward (Vf) (Max) @ If: 1.52 V @ 520 A
Voltage - DC Reverse (Vr) (Max): 600 V
Part Status: Active
Operating Temperature - Junction: -40°C ~ 150°C
Supplier Device Package: Y4-M6
Current - Average Rectified (Io): 514A
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MID100-12A3
Hersteller: IXYS
Description: IGBT MODULE 1200V 135A 560W Y4M5
Input Capacitance (Cies) @ Vce: 5.5 nF @ 25 V
Current - Collector Cutoff (Max): 5 mA
Power - Max: 560 W
Voltage - Collector Emitter Breakdown (Max): 1200 V
Current - Collector (Ic) (Max): 135 A
IGBT Type: NPT
Supplier Device Package: Y4-M5
NTC Thermistor: No
Vce(on) (Max) @ Vge, Ic: 2.7V @ 15V, 75A
Operating Temperature: -40°C ~ 150°C (TJ)
Configuration: Single
Input: Standard
Mounting Type: Chassis Mount
Package / Case: Y4-M5
Packaging: Box
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MID145-12A3
Hersteller: IXYS
Description: IGBT MOD 1200V 160A 700W Y4-M5
Packaging: Box
Package / Case: Y4-M5
Mounting Type: Chassis Mount
Input: Standard
Configuration: Single
Operating Temperature: -40°C ~ 150°C (TJ)
Vce(on) (Max) @ Vge, Ic: 2.7V @ 15V, 100A
NTC Thermistor: No
Supplier Device Package: Y4-M5
IGBT Type: NPT
Current - Collector (Ic) (Max): 160 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Power - Max: 700 W
Current - Collector Cutoff (Max): 6 mA
Input Capacitance (Cies) @ Vce: 6.5 nF @ 25 V
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MID150-12A4 MII150-12A4_MID150-12A4_MDI150-12A4.pdf
Hersteller: IXYS
Description: IGBT MOD 1200V 180A 760W Y3DCB
Current - Collector Cutoff (Max): 7.5 mA
Power - Max: 760 W
Voltage - Collector Emitter Breakdown (Max): 1200 V
Current - Collector (Ic) (Max): 180 A
IGBT Type: NPT
Supplier Device Package: Y3-DCB
NTC Thermistor: No
Vce(on) (Max) @ Vge, Ic: 2.7V @ 15V, 100A
Operating Temperature: 150°C (TJ)
Configuration: Single
Input: Standard
Mounting Type: Chassis Mount
Package / Case: Y3-DCB
Packaging: Box
Input Capacitance (Cies) @ Vce: 6.6 nF @ 25 V
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MID200-12A4
Hersteller: IXYS
Description: IGBT MOD 1200V 270A 1130W Y3-DCB
Input Capacitance (Cies) @ Vce: 11 nF @ 25 V
Current - Collector Cutoff (Max): 10 mA
Power - Max: 1130 W
Voltage - Collector Emitter Breakdown (Max): 1200 V
Current - Collector (Ic) (Max): 270 A
Part Status: Active
IGBT Type: NPT
Supplier Device Package: Y3-DCB
NTC Thermistor: No
Vce(on) (Max) @ Vge, Ic: 2.7V @ 15V, 150A
Operating Temperature: 150°C (TJ)
Configuration: Single
Input: Standard
Mounting Type: Chassis Mount
Package / Case: Y3-DCB
Packaging: Box
Produkt ist nicht verfügbar
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MID300-12A4
Hersteller: IXYS
Description: IGBT MOD 1200V 330A 1380W Y3DCB
Input Capacitance (Cies) @ Vce: 13 nF @ 25 V
Current - Collector Cutoff (Max): 13 mA
Power - Max: 1380 W
Voltage - Collector Emitter Breakdown (Max): 1200 V
Current - Collector (Ic) (Max): 330 A
Part Status: Active
IGBT Type: NPT
Supplier Device Package: Y3-DCB
NTC Thermistor: No
Vce(on) (Max) @ Vge, Ic: 2.7V @ 15V, 200A
Operating Temperature: -40°C ~ 150°C (TJ)
Configuration: Single
Input: Standard
Mounting Type: Chassis Mount
Package / Case: Y3-DCB
Packaging: Box
Produkt ist nicht verfügbar
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MID400-12E4 MII400-12E4_MID400-12E4%28T%29_MDI400-12E4.pdf
Hersteller: IXYS
Description: IGBT MOD 1200V 420A 1700W Y3-LI
Input Capacitance (Cies) @ Vce: 17 nF @ 25 V
Current - Collector Cutoff (Max): 3.3 mA
Power - Max: 1700 W
Voltage - Collector Emitter Breakdown (Max): 1200 V
Current - Collector (Ic) (Max): 420 A
IGBT Type: NPT
Supplier Device Package: Y3-Li
NTC Thermistor: No
Vce(on) (Max) @ Vge, Ic: 2.8V @ 15V, 300A
Operating Temperature: -40°C ~ 150°C (TJ)
Configuration: Single
Input: Standard
Mounting Type: Chassis Mount
Package / Case: Y3-Li
Packaging: Box
Produkt ist nicht verfügbar
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MID400-12E4T MII400-12E4_MID400-12E4%28T%29_MDI400-12E4.pdf
Hersteller: IXYS
Description: IGBT MOD 1200V 420A 1700W Y3-LI
NTC Thermistor: Yes
Vce(on) (Max) @ Vge, Ic: 2.8V @ 15V, 300A
Operating Temperature: -40°C ~ 150°C (TJ)
Configuration: Single
Input: Standard
Mounting Type: Chassis Mount
Package / Case: Y3-Li
Packaging: Box
Input Capacitance (Cies) @ Vce: 17 nF @ 25 V
Current - Collector Cutoff (Max): 3.3 mA
Power - Max: 1700 W
Voltage - Collector Emitter Breakdown (Max): 1200 V
Current - Collector (Ic) (Max): 420 A
IGBT Type: NPT
Supplier Device Package: Y3-Li
Produkt ist nicht verfügbar
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MID550-12A4
Hersteller: IXYS
Description: IGBT MOD 1200V 670A 2750W Y3DCB
Input Capacitance (Cies) @ Vce: 26 nF @ 25 V
Current - Collector Cutoff (Max): 21 mA
Power - Max: 2750 W
Voltage - Collector Emitter Breakdown (Max): 1200 V
Current - Collector (Ic) (Max): 670 A
IGBT Type: NPT
Supplier Device Package: Y3-DCB
NTC Thermistor: No
Vce(on) (Max) @ Vge, Ic: 2.8V @ 15V, 400A
Operating Temperature: 150°C (TJ)
Configuration: Single
Input: Standard
Mounting Type: Chassis Mount
Package / Case: Y3-DCB
Packaging: Box
Produkt ist nicht verfügbar
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MID75-12A3
Hersteller: IXYS
Description: IGBT MODULE 1200V 90A 370W Y4M5
Input Capacitance (Cies) @ Vce: 3.3 nF @ 25 V
Current - Collector Cutoff (Max): 4 mA
Power - Max: 370 W
Voltage - Collector Emitter Breakdown (Max): 1200 V
Current - Collector (Ic) (Max): 90 A
Part Status: Obsolete
IGBT Type: NPT
Supplier Device Package: Y4-M5
NTC Thermistor: No
Vce(on) (Max) @ Vge, Ic: 2.7V @ 15V, 50A
Operating Temperature: -40°C ~ 150°C (TJ)
Configuration: Single
Input: Standard
Mounting Type: Chassis Mount
Package / Case: Y4-M5
Packaging: Box
Produkt ist nicht verfügbar
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MII145-12A3
Hersteller: IXYS
Description: IGBT MOD 1200V 160A 700W Y4-M5
Packaging: Box
Package / Case: Y4-M5
Mounting Type: Chassis Mount
Input: Standard
Configuration: Half Bridge
Operating Temperature: -40°C ~ 150°C (TJ)
Vce(on) (Max) @ Vge, Ic: 2.7V @ 15V, 100A
NTC Thermistor: No
Supplier Device Package: Y4-M5
IGBT Type: NPT
Current - Collector (Ic) (Max): 160 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Power - Max: 700 W
Current - Collector Cutoff (Max): 6 mA
Input Capacitance (Cies) @ Vce: 6.5 nF @ 25 V
Produkt ist nicht verfügbar
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MII150-12A4 MII150-12A4_MID150-12A4_MDI150-12A4.pdf
Hersteller: IXYS
Description: MOD IGBT RBSOA 1200V 180A Y3-DCB
Produkt ist nicht verfügbar
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MII200-12A4
Hersteller: IXYS
Description: IGBT MOD 1200V 270A 1130W Y3-DCB
Packaging: Box
Package / Case: Y3-DCB
Mounting Type: Chassis Mount
Input: Standard
Configuration: Half Bridge
Operating Temperature: 150°C (TJ)
Vce(on) (Max) @ Vge, Ic: 2.7V @ 15V, 150A
NTC Thermistor: No
Supplier Device Package: Y3-DCB
IGBT Type: NPT
Current - Collector (Ic) (Max): 270 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Power - Max: 1130 W
Current - Collector Cutoff (Max): 10 mA
Input Capacitance (Cies) @ Vce: 11 nF @ 25 V
Produkt ist nicht verfügbar
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MII300-12A4
Hersteller: IXYS
Description: IGBT MOD 1200V 330A 1380W Y3DCB
Input Capacitance (Cies) @ Vce: 13 nF @ 25 V
Current - Collector Cutoff (Max): 13 mA
Power - Max: 1380 W
Voltage - Collector Emitter Breakdown (Max): 1200 V
Current - Collector (Ic) (Max): 330 A
Part Status: Active
IGBT Type: NPT
Supplier Device Package: Y3-DCB
NTC Thermistor: No
Vce(on) (Max) @ Vge, Ic: 2.7V @ 15V, 200A
Operating Temperature: -40°C ~ 150°C (TJ)
Configuration: Half Bridge
Input: Standard
Mounting Type: Chassis Mount
Package / Case: Y3-DCB
Packaging: Box
Produkt ist nicht verfügbar
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MII75-12A3
Hersteller: IXYS
Description: IGBT MODULE 1200V 90A 370W Y4M5
Input Capacitance (Cies) @ Vce: 3.3 nF @ 25 V
Current - Collector Cutoff (Max): 4 mA
Power - Max: 370 W
Voltage - Collector Emitter Breakdown (Max): 1200 V
Current - Collector (Ic) (Max): 90 A
Part Status: Obsolete
IGBT Type: NPT
Supplier Device Package: Y4-M5
NTC Thermistor: No
Vce(on) (Max) @ Vge, Ic: 2.7V @ 15V, 50A
Operating Temperature: -40°C ~ 150°C (TJ)
Configuration: Half Bridge
Input: Standard
Mounting Type: Chassis Mount
Package / Case: Y4-M5
Packaging: Box
Produkt ist nicht verfügbar
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MIO 600-65E11 MIO%20600-65E11.pdf
Hersteller: IXYS
Description: MOD IGBT SGL SWITCH 6500V E11
Produkt ist nicht verfügbar
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MIO1200-25E10 MIO1200-25E10.pdf
Hersteller: IXYS
Description: IGBT MODULE 2500V 1200A E10
Input Capacitance (Cies) @ Vce: 186 nF @ 25 V
Current - Collector Cutoff (Max): 120 mA
Voltage - Collector Emitter Breakdown (Max): 2500 V
Current - Collector (Ic) (Max): 1200 A
Part Status: Obsolete
IGBT Type: NPT
Supplier Device Package: E10
NTC Thermistor: No
Vce(on) (Max) @ Vge, Ic: 2.5V @ 15V, 1200A
Operating Temperature: -40°C ~ 125°C (TJ)
Configuration: Single Switch
Input: Standard
Mounting Type: Chassis Mount
Package / Case: E10
Packaging: Box
Produkt ist nicht verfügbar
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MIO1200-33E10 MIO1200-33E10.pdf
Hersteller: IXYS
Description: IGBT MODULE 3300V 1200A E10
Package / Case: E10
Packaging: Box
Input Capacitance (Cies) @ Vce: 187 nF @ 25 V
Current - Collector Cutoff (Max): 120 mA
Voltage - Collector Emitter Breakdown (Max): 3300 V
Current - Collector (Ic) (Max): 1200 A
Part Status: Active
IGBT Type: NPT
Supplier Device Package: E10
NTC Thermistor: No
Vce(on) (Max) @ Vge, Ic: 3.1V @ 15V, 1200A
Operating Temperature: -40°C ~ 125°C (TJ)
Configuration: Single Switch
Input: Standard
Mounting Type: Chassis Mount
Produkt ist nicht verfügbar
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MIO1800-17E10 MIO1800-17E10.pdf
Hersteller: IXYS
Description: IGBT MODULE 1700V 1800A E10
Input Capacitance (Cies) @ Vce: 166 nF @ 25 V
Current - Collector Cutoff (Max): 120 mA
Voltage - Collector Emitter Breakdown (Max): 1700 V
Current - Collector (Ic) (Max): 1800 A
Part Status: Obsolete
IGBT Type: NPT
Supplier Device Package: E10
NTC Thermistor: No
Vce(on) (Max) @ Vge, Ic: 2.6V @ 15V, 1800A
Operating Temperature: -40°C ~ 125°C (TJ)
Configuration: Single Switch
Input: Standard
Mounting Type: Chassis Mount
Package / Case: E10
Packaging: Box
Produkt ist nicht verfügbar
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