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JANTX1N5551 JANTX1N5551 Microchip Technology LDS-0230%2C+1N5550+thru+1N5554%2C+MIL-PRF-19500-420.pdf Description: DIODE STANDARD 400V 5A B AXIAL
Packaging: Bulk
Package / Case: B, Axial
Mounting Type: Through Hole
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): 2 µs
Technology: Standard
Current - Average Rectified (Io): 5A
Supplier Device Package: B, Axial
Operating Temperature - Junction: -65°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 400 V
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 9 A
Current - Reverse Leakage @ Vr: 1 µA @ 400 V
Grade: Military
Qualification: MIL-PRF-19500/420
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JANTX1N5552 JANTX1N5552 Microchip Technology LDS-0230%2C+1N5550+thru+1N5554%2C+MIL-PRF-19500-420.pdf Description: DIODE STANDARD 600V 5A B AXIAL
Packaging: Bulk
Package / Case: B, Axial
Mounting Type: Through Hole
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): 2 µs
Technology: Standard
Current - Average Rectified (Io): 5A
Supplier Device Package: B, Axial
Operating Temperature - Junction: -65°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 9 A
Current - Reverse Leakage @ Vr: 1 µA @ 600 V
Grade: Military
Qualification: MIL-PRF-19500/420
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JANTX1N5553 JANTX1N5553 Microchip Technology LDS-0230%2C+1N5550+thru+1N5554%2C+MIL-PRF-19500-420.pdf Description: DIODE STANDARD 800V 5A B AXIAL
Packaging: Bulk
Package / Case: B, Axial
Mounting Type: Through Hole
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): 2 µs
Technology: Standard
Current - Average Rectified (Io): 5A
Supplier Device Package: B, Axial
Operating Temperature - Junction: -65°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 800 V
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 9 A
Current - Reverse Leakage @ Vr: 1 µA @ 800 V
Grade: Military
Qualification: MIL-PRF-19500/420
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JANTX1N5554 JANTX1N5554 Microchip Technology LDS-0230%2C+1N5550+thru+1N5554%2C+MIL-PRF-19500-420.pdf Description: DIODE STANDARD 1000V 5A B AXIAL
Packaging: Bulk
Package / Case: B, Axial
Mounting Type: Through Hole
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): 2 µs
Technology: Standard
Current - Average Rectified (Io): 5A
Supplier Device Package: B, Axial
Operating Temperature - Junction: -65°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 1000 V
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 9 A
Current - Reverse Leakage @ Vr: 2 µA @ 1000 V
Grade: Military
Qualification: MIL-PRF-19500/420
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JANTX1N5618 JANTX1N5618 Microchip Technology SD46A%2C+1N5614+thru+1N5622%2C+MIL-PRF-19500-427.pdf Description: DIODE STANDARD 600V 1A AXIAL
Qualification: MIL-PRF-19500/427
Current - Reverse Leakage @ Vr: 500 nA @ 600 V
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 3 A
Voltage - DC Reverse (Vr) (Max): 600 V
Grade: Military
Operating Temperature - Junction: -65°C ~ 200°C
Supplier Device Package: A, Axial
Current - Average Rectified (Io): 1A
Technology: Standard
Reverse Recovery Time (trr): 2 µs
Speed: Standard Recovery >500ns, > 200mA (Io)
Mounting Type: Through Hole
Package / Case: A, Axial
Packaging: Bulk
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JANTX1N5804 Microchip Technology Description: DIODE STANDARD 100V 1A AXIAL
Packaging: Bulk
Package / Case: A, Axial
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 25 ns
Technology: Standard
Capacitance @ Vr, F: 25pF @ 10V, 1MHz
Current - Average Rectified (Io): 1A
Operating Temperature - Junction: -65°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 875 mV @ 1 A
Current - Reverse Leakage @ Vr: 1 µA @ 100 V
Supplier Device Package: A, Axial
Grade: Military
Qualification: MIL-PRF-19500/477
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JANTX1N5804US JANTX1N5804US Microchip Technology LDS-0211+%282%29%2C+1N5802-1N5804-1N5806%2C+MIL-PRF-19500-477.pdf Description: DIODE STANDARD 100V 1A D5A
Packaging: Bulk
Package / Case: SQ-MELF, A
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 25 ns
Technology: Standard
Capacitance @ Vr, F: 25pF @ 10V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: D-5A
Operating Temperature - Junction: -65°C ~ 175°C
Grade: Military
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 875 mV @ 1 A
Current - Reverse Leakage @ Vr: 1 µA @ 100 V
Qualification: MIL-PRF-19500/477
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JANTX1N6105AUS JANTX1N6105AUS Microchip Technology lds-0277-1.pdf Description: TVS DIODE 6.9VWM 13.4V B SQMELF
Qualification: MIL-PRF-19500/516
Grade: Military
Power Line Protection: No
Power - Peak Pulse: 500W
Voltage - Clamping (Max) @ Ipp: 13.4V
Voltage - Breakdown (Min): 8.65V
Bidirectional Channels: 1
Supplier Device Package: B, SQ-MELF
Voltage - Reverse Standoff (Typ): 6.9V
Current - Peak Pulse (10/1000µs): 37.3A
Applications: General Purpose
Operating Temperature: -55°C ~ 175°C (TJ)
Type: Zener
Mounting Type: Surface Mount
Package / Case: SQ-MELF, B
Packaging: Bulk
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JANTX1N6118AUS JANTX1N6118AUS Microchip Technology lds-0277-1.pdf Description: TVS DIODE 25.1VWM 45.7VC SQMELF
Voltage - Clamping (Max) @ Ipp: 45.7V
Voltage - Breakdown (Min): 31.4V
Bidirectional Channels: 1
Supplier Device Package: B, SQ-MELF
Voltage - Reverse Standoff (Typ): 25.1V
Current - Peak Pulse (10/1000µs): 10.9A
Applications: General Purpose
Operating Temperature: -55°C ~ 175°C (TJ)
Type: Zener
Mounting Type: Surface Mount
Package / Case: SQ-MELF, B
Packaging: Bulk
Part Status: Active
Power Line Protection: No
Power - Peak Pulse: 500W
Qualification: MIL-PRF-19500/516
Grade: Military
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JANTX1N6120AUS JANTX1N6120AUS Microchip Technology 127892-lds-0277-1-datasheet Description: TVS DIODE 29.7VWM 53.6VC SQ-MELF
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JANTX1N6123A JANTX1N6123A Microchip Technology 127891-lds-0277-datasheet Description: TVS DIODE 38.8V 70.1V AXIAL
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JANTX1N6126A JANTX1N6126A Microchip Technology lds-0277.pdf Description: TVS DIODE 51.7VWM 97.1V AXIAL
Qualification: MIL-PRF-19500/516
Grade: Military
Power Line Protection: No
Power - Peak Pulse: 500W
Voltage - Clamping (Max) @ Ipp: 97.1V
Voltage - Breakdown (Min): 64.6V
Bidirectional Channels: 1
Supplier Device Package: B, Axial
Voltage - Reverse Standoff (Typ): 51.7V
Current - Peak Pulse (10/1000µs): 5.1A
Applications: General Purpose
Operating Temperature: -55°C ~ 175°C (TJ)
Type: Zener
Mounting Type: Through Hole
Package / Case: B, Axial
Packaging: Bulk
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JANTX1N6126AUS JANTX1N6126AUS Microchip Technology lds-0277-1.pdf Description: TVS DIODE 51.7VWM 97.1VC SQMELF
Packaging: Bulk
Package / Case: SQ-MELF, B
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 175°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 5.1A
Voltage - Reverse Standoff (Typ): 51.7V
Supplier Device Package: B, SQ-MELF
Bidirectional Channels: 1
Voltage - Breakdown (Min): 64.6V
Voltage - Clamping (Max) @ Ipp: 97.1V
Power - Peak Pulse: 500W
Power Line Protection: No
Part Status: Discontinued at Digi-Key
Grade: Military
Qualification: MIL-PRF-19500/516
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JANTX1N6467 JANTX1N6467 Microchip Technology 10875-sa4-21-datasheet Description: TVS DIODE 40.3VWM 63.5V AXIAL
Voltage - Breakdown (Min): 43.7V
Unidirectional Channels: 1
Supplier Device Package: B, Axial
Voltage - Reverse Standoff (Typ): 40.3V
Current - Peak Pulse (10/1000µs): 45A (8/20µs)
Applications: General Purpose
Operating Temperature: -55°C ~ 175°C (TJ)
Type: Zener
Mounting Type: Through Hole
Package / Case: B, Axial
Packaging: Bulk
Qualification: MIL-PRF-19500/551
Grade: Military
Power Line Protection: No
Power - Peak Pulse: 500W
Voltage - Clamping (Max) @ Ipp: 63.5V
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JANTX1N6472 JANTX1N6472 Microchip Technology 11064-sd49a-datasheet Description: TVS DIODE 15VWM 26.5VC AXIAL
Qualification: MIL-PRF-19500/552
Grade: Military
Power Line Protection: No
Power - Peak Pulse: 1500W (1.5kW)
Voltage - Clamping (Max) @ Ipp: 26.5V
Voltage - Breakdown (Min): 16.4V
Unidirectional Channels: 1
Supplier Device Package: Axial
Voltage - Reverse Standoff (Typ): 15V
Current - Peak Pulse (10/1000µs): 322A (8/20µs)
Applications: General Purpose
Operating Temperature: -55°C ~ 175°C (TJ)
Type: Zener
Mounting Type: Through Hole
Package / Case: G, Axial
Packaging: Bulk
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JANTX1N6620 JANTX1N6620 Microchip Technology 10972-sa7-55-datasheet Description: DIODE GEN PURP 220V 2A AXIAL
Current - Reverse Leakage @ Vr: 500 nA @ 220 V
Voltage - Forward (Vf) (Max) @ If: 1.4 V @ 1.2 A
Voltage - DC Reverse (Vr) (Max): 220 V
Part Status: Active
Operating Temperature - Junction: -65°C ~ 150°C
Supplier Device Package: Axial
Current - Average Rectified (Io): 2A
Capacitance @ Vr, F: 10pF @ 10V, 1MHz
Technology: Standard
Reverse Recovery Time (trr): 30 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Through Hole
Package / Case: A, Axial
Packaging: Bulk
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JANTX1N6620US JANTX1N6620US Microchip Technology 11068-sd52a-datasheet Description: DIODE GEN PURP 220V 2A D-5A
Current - Reverse Leakage @ Vr: 500 nA @ 220 V
Voltage - Forward (Vf) (Max) @ If: 1.4 V @ 1.2 A
Voltage - DC Reverse (Vr) (Max): 220 V
Part Status: Active
Operating Temperature - Junction: -65°C ~ 150°C
Supplier Device Package: D-5A
Current - Average Rectified (Io): 2A
Capacitance @ Vr, F: 10pF @ 10V, 1MHz
Technology: Standard
Reverse Recovery Time (trr): 30 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: SQ-MELF, A
Packaging: Bulk
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JANTX1N6621 JANTX1N6621 Microchip Technology 10972-sa7-55-datasheet Description: DIODE GEN PURP 440V 2A AXIAL
Current - Reverse Leakage @ Vr: 500 nA @ 440 V
Voltage - Forward (Vf) (Max) @ If: 1.4 V @ 1.2 A
Voltage - DC Reverse (Vr) (Max): 440 V
Part Status: Active
Operating Temperature - Junction: -65°C ~ 150°C
Current - Average Rectified (Io): 2A
Capacitance @ Vr, F: 10pF @ 10V, 1MHz
Technology: Standard
Reverse Recovery Time (trr): 30 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Through Hole
Package / Case: A, Axial
Packaging: Bulk
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JANTX1N6621US JANTX1N6621US Microchip Technology 11068-sd52a-datasheet Description: DIODE GEN PURP 440V 2A D-5A
Qualification: MIL-PRF-19500/585
Grade: Military
Current - Reverse Leakage @ Vr: 500 nA @ 440 V
Voltage - Forward (Vf) (Max) @ If: 1.4 V @ 1.2 A
Voltage - DC Reverse (Vr) (Max): 440 V
Part Status: Active
Operating Temperature - Junction: -65°C ~ 150°C
Supplier Device Package: D-5A
Current - Average Rectified (Io): 2A
Capacitance @ Vr, F: 10pF @ 10V, 1MHz
Technology: Standard
Reverse Recovery Time (trr): 30 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: SQ-MELF, A
Packaging: Bulk
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JANTX1N6622US JANTX1N6622US Microchip Technology 11068-sd52a-datasheet Description: DIODE GEN PURP 660V 2A D-5A
Current - Reverse Leakage @ Vr: 500 nA @ 660 V
Voltage - Forward (Vf) (Max) @ If: 1.4 V @ 1.2 A
Voltage - DC Reverse (Vr) (Max): 660 V
Part Status: Active
Operating Temperature - Junction: -65°C ~ 150°C
Supplier Device Package: D-5A
Current - Average Rectified (Io): 2A
Capacitance @ Vr, F: 10pF @ 10V, 1MHz
Technology: Standard
Reverse Recovery Time (trr): 30 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: SQ-MELF, A
Packaging: Bulk
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JANTX1N6623US JANTX1N6623US Microchip Technology 11068-sd52a-datasheet Description: DIODE GEN PURP 880V 1A D5A
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JANTX1N829-1 JANTX1N829-1 Microchip Technology 125462-lds-0220-datasheet Description: DIODE ZENER 6.2V 500MW DO35
Current - Reverse Leakage @ Vr: 2 µA @ 3 V
Power - Max: 500 mW
Part Status: Active
Supplier Device Package: DO-204AH (DO-35)
Impedance (Max) (Zzt): 15 Ohms
Voltage - Zener (Nom) (Vz): 6.2 V
Mounting Type: Through Hole
Package / Case: DO-204AH, DO-35, Axial
Tolerance: ±5%
Packaging: Bulk
Qualification: MIL-PRF-19500/159
Grade: Military
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JANTX1N829UR-1 Microchip Technology 11037-lds-0220-1-datasheet Description: DIODE ZENER 6.2V 500MW DO213AA
Current - Reverse Leakage @ Vr: 2 µA @ 3 V
Supplier Device Package: DO-213AA
Impedance (Max) (Zzt): 15 Ohms
Voltage - Zener (Nom) (Vz): 6.2 V
Mounting Type: Surface Mount
Package / Case: DO-213AA
Tolerance: ±5%
Packaging: Bulk
Qualification: MIL-PRF-19500/159
Grade: Military
Power - Max: 500 mW
Part Status: Active
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JANTX2N2219 JANTX2N2219 Microchip Technology 2N2218-2N2219AL-LDS0091-MIL-PRF-19500-251.pdf Description: TRANS NPN 30V 0.8A TO-39
Packaging: Bulk
Package / Case: TO-205AD, TO-39-3 Metal Can
Mounting Type: Through Hole
Transistor Type: NPN
Operating Temperature: -55°C ~ 200°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 1.6V @ 50mA, 500mA
Current - Collector Cutoff (Max): 10nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 150mA, 10V
Supplier Device Package: TO-39
Part Status: Discontinued at Digi-Key
Current - Collector (Ic) (Max): 800 mA
Voltage - Collector Emitter Breakdown (Max): 30 V
Power - Max: 800 mW
Grade: Military
Qualification: MIL-PRF-19500/251
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JANTX2N2219A JANTX2N2219A Microchip Technology 2N2218-2N2219AL-LDS0091-MIL-PRF-19500-251.pdf Description: TRANS NPN 50V 0.8A TO-39
Packaging: Bulk
Package / Case: TO-205AD, TO-39-3 Metal Can
Mounting Type: Through Hole
Transistor Type: NPN
Operating Temperature: -55°C ~ 200°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 1V @ 50mA, 500mA
Current - Collector Cutoff (Max): 10nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 150mA, 10V
Supplier Device Package: TO-39
Part Status: Active
Current - Collector (Ic) (Max): 800 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 800 mW
Grade: Military
Qualification: MIL-PRF-19500/251
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Jantx2N2219AL Jantx2N2219AL Microchip Technology 2N2218-2N2219AL-LDS0091-MIL-PRF-19500-251.pdf Description: TRANS NPN 50V 0.8A TO-39
Packaging: Bulk
Package / Case: TO-205AD, TO-39-3 Metal Can
Mounting Type: Through Hole
Transistor Type: NPN
Operating Temperature: -55°C ~ 200°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 1V @ 50mA, 500mA
Current - Collector Cutoff (Max): 10nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 150mA, 10V
Supplier Device Package: TO-39
Part Status: Active
Current - Collector (Ic) (Max): 800 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 800 mW
Grade: Military
Qualification: MIL-PRF-19500/251
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JANTX2N2222A JANTX2N2222A Microchip Technology MIL-PRF-19500_255AA_wAmendment1_5-19-16.pdf Description: TRANS NPN 50V 0.8A TO-218
Packaging: Bulk
Package / Case: TO-206AA, TO-18-3 Metal Can
Mounting Type: Through Hole
Transistor Type: NPN
Operating Temperature: -65°C ~ 200°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 1V @ 50mA, 500mA
Current - Collector Cutoff (Max): 50nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 150mA, 10V
Supplier Device Package: TO-218
Part Status: Active
Current - Collector (Ic) (Max): 800 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 500 mW
Grade: Military
Qualification: MIL-PRF-19500/255
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JANTX2N2222AUA JANTX2N2222AUA Microchip Technology MIL-PRF-19500_255AA_wAmendment1_5-19-16.pdf Description: TRANS NPN 50V 0.8A 4-SMD
Packaging: Bulk
Package / Case: 4-SMD
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: -65°C ~ 200°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 1V @ 50mA, 500mA
Current - Collector Cutoff (Max): 50nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 150mA, 10V
Supplier Device Package: 4-SMD
Part Status: Active
Current - Collector (Ic) (Max): 800 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 650 mW
Grade: Military
Qualification: MIL-PRF-19500/255
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JANTX2N2222AUB JANTX2N2222AUB Microchip Technology MIL-PRF-19500_255AA_wAmendment1_5-19-16.pdf Description: TRANS NPN 50V 0.8A UB
Packaging: Bulk
Package / Case: 3-SMD, No Lead
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: -65°C ~ 200°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 1V @ 50mA, 500mA
Current - Collector Cutoff (Max): 50nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 150mA, 10V
Supplier Device Package: UB
Part Status: Active
Current - Collector (Ic) (Max): 800 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 500 mW
Grade: Military
Qualification: MIL-PRF-19500/255
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JANTX2N2369A JANTX2N2369A Microchip Technology 2N2369A-2N4449-MIL-PRF-19500-317.pdf Description: TRANS NPN 15V TO18
Packaging: Bulk
Package / Case: TO-206AA, TO-18-3 Metal Can
Mounting Type: Through Hole
Transistor Type: NPN
Operating Temperature: -65°C ~ 200°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 450mV @ 10mA, 100mA
Current - Collector Cutoff (Max): 400nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 20 @ 100mA, 1V
Supplier Device Package: TO-18 (TO-206AA)
Part Status: Active
Voltage - Collector Emitter Breakdown (Max): 15 V
Power - Max: 360 mW
Grade: Military
Qualification: MIL-PRF-19500/317
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JANTX2N2369AUB JANTX2N2369AUB Microchip Technology 2N2369A-2N4449-MIL-PRF-19500-317.pdf Description: TRANS NPN 20V UB
Packaging: Bulk
Package / Case: 3-SMD, No Lead
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: -65°C ~ 200°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 450mV @ 10mA, 100mA
Current - Collector Cutoff (Max): 400nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 20 @ 100mA, 1V
Supplier Device Package: UB
Part Status: Active
Voltage - Collector Emitter Breakdown (Max): 20 V
Power - Max: 400 mW
Grade: Military
Qualification: MIL-PRF-19500/317
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JANTX2N2484UB JANTX2N2484UB Microchip Technology 2N2484+MIL-PRF-19500_376.pdf Description: TRANS NPN 60V 0.05A UB
Packaging: Bulk
Package / Case: 3-SMD, No Lead
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: -65°C ~ 200°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 300mV @ 100µA, 1mA
Current - Collector Cutoff (Max): 2nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 225 @ 10mA, 5V
Supplier Device Package: UB
Current - Collector (Ic) (Max): 50 mA
Voltage - Collector Emitter Breakdown (Max): 60 V
Power - Max: 360 mW
Grade: Military
Qualification: MIL-PRF-19500/376
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JANTX2N2905A JANTX2N2905A Microchip Technology 2N2904-2N2905-MIL-PRF-19500-290.pdf Description: TRANS PNP 60V 0.6A TO39
Packaging: Bulk
Package / Case: TO-205AD, TO-39-3 Metal Can
Mounting Type: Through Hole
Transistor Type: PNP
Operating Temperature: -65°C ~ 200°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 1.6V @ 50mA, 500mA
Current - Collector Cutoff (Max): 1µA
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 150mA, 10V
Supplier Device Package: TO-39 (TO-205AD)
Part Status: Active
Current - Collector (Ic) (Max): 600 mA
Voltage - Collector Emitter Breakdown (Max): 60 V
Power - Max: 800 mW
Grade: Military
Qualification: MIL-PRF-19500/290
Produkt ist nicht verfügbar
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JANTX2N2905AL JANTX2N2905AL Microchip Technology LDS-0186_2N2904-05%28AL%29.pdf Description: TRANS PNP 60V 0.6A TO-5
Packaging: Bulk
Package / Case: TO-205AA, TO-5-3 Metal Can
Mounting Type: Through Hole
Transistor Type: PNP
Operating Temperature: -65°C ~ 200°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 1.6V @ 50mA, 500mA
Current - Collector Cutoff (Max): 1µA
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 150mA, 10V
Supplier Device Package: TO-5
Part Status: Active
Current - Collector (Ic) (Max): 600 mA
Voltage - Collector Emitter Breakdown (Max): 60 V
Power - Max: 800 mW
Grade: Military
Qualification: MIL-PRF-19500/290
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JANTX2N2906A JANTX2N2906A Microchip Technology 8896-lds-0059-datasheet Description: TRANS PNP 60V 0.6A TO18
Qualification: MIL-PRF-19500/291
Grade: Military
Power - Max: 500 mW
Voltage - Collector Emitter Breakdown (Max): 60 V
Current - Collector (Ic) (Max): 600 mA
Part Status: Active
Supplier Device Package: TO-18 (TO-206AA)
DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 150mA, 10V
Operating Temperature: -65°C ~ 200°C (TJ)
Transistor Type: PNP
Mounting Type: Through Hole
Package / Case: TO-206AA, TO-18-3 Metal Can
Packaging: Bulk
Current - Collector Cutoff (Max): 50nA
Vce Saturation (Max) @ Ib, Ic: 1.6V @ 50mA, 500mA
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JANTX2N2906AUB JANTX2N2906AUB Microchip Technology 8896-lds-0059-datasheet Description: TRANS PNP 60V 0.6A UB
Power - Max: 500 mW
Voltage - Collector Emitter Breakdown (Max): 60 V
Current - Collector (Ic) (Max): 600 mA
Part Status: Active
Supplier Device Package: UB
DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 150mA, 10V
Qualification: MIL-PRF-19500/291
Grade: Military
Current - Collector Cutoff (Max): 50nA
Vce Saturation (Max) @ Ib, Ic: 1.6V @ 50mA, 500mA
Operating Temperature: -65°C ~ 200°C (TJ)
Transistor Type: PNP
Mounting Type: Surface Mount
Package / Case: 3-SMD, No Lead
Packaging: Bulk
Produkt ist nicht verfügbar
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JANTX2N2907A JANTX2N2907A Microchip Technology MIL-PRF-19500_291Y_wAmendment1_7-10-19.pdf Description: TRANS PNP 60V 0.6A TO206AA
Packaging: Bulk
Package / Case: TO-206AA, TO-18-3 Metal Can
Mounting Type: Through Hole
Transistor Type: PNP
Operating Temperature: -65°C ~ 200°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 1.6V @ 50mA, 500mA
Current - Collector Cutoff (Max): 50nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 150mA, 10V
Supplier Device Package: TO-206AA (TO-18)
Grade: Military
Part Status: Active
Current - Collector (Ic) (Max): 600 mA
Voltage - Collector Emitter Breakdown (Max): 60 V
Power - Max: 500 mW
Qualification: MIL-PRF-19500/291
Produkt ist nicht verfügbar
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Jantx2N2907AL Jantx2N2907AL Microchip Technology MIL-PRF-19500_291Y_wAmendment1_7-10-19.pdf Description: TRANS PNP 60V 0.6A TO206AA
Packaging: Bulk
Package / Case: TO-206AA, TO-18-3 Metal Can
Mounting Type: Through Hole
Transistor Type: PNP
Operating Temperature: -65°C ~ 200°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 1.6V @ 50mA, 500mA
Current - Collector Cutoff (Max): 50nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 150mA, 10V
Supplier Device Package: TO-206AA (TO-18)
Grade: Military
Part Status: Discontinued at Digi-Key
Current - Collector (Ic) (Max): 600 mA
Voltage - Collector Emitter Breakdown (Max): 60 V
Power - Max: 500 mW
Qualification: MIL-PRF-19500/291
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JANTX2N2907AUA JANTX2N2907AUA Microchip Technology MIL-PRF-19500_291Y_wAmendment1_7-10-19.pdf Description: TRANS PNP 60V 0.6A UA
Packaging: Bulk
Package / Case: 4-SMD, No Lead
Mounting Type: Surface Mount
Transistor Type: PNP
Operating Temperature: -65°C ~ 200°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 1.6V @ 50mA, 500mA
Current - Collector Cutoff (Max): 50nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 150mA, 10V
Supplier Device Package: UA
Grade: Military
Current - Collector (Ic) (Max): 600 mA
Voltage - Collector Emitter Breakdown (Max): 60 V
Power - Max: 500 mW
Qualification: MIL-PRF-19500/291
Produkt ist nicht verfügbar
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JANTX2N2907AUB JANTX2N2907AUB Microchip Technology MIL-PRF-19500_291Y_wAmendment1_7-10-19.pdf Description: TRANS PNP 60V 0.6A UB
Packaging: Bulk
Package / Case: 4-SMD, No Lead
Mounting Type: Surface Mount
Transistor Type: PNP
Operating Temperature: -65°C ~ 200°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 1.6V @ 50mA, 500mA
Current - Collector Cutoff (Max): 50nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 150mA, 10V
Supplier Device Package: UB
Grade: Military
Part Status: Active
Current - Collector (Ic) (Max): 600 mA
Voltage - Collector Emitter Breakdown (Max): 60 V
Power - Max: 500 mW
Qualification: MIL-PRF-19500/291
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2+9.35 EUR
100+8.68 EUR
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JANTX2N2946A Microchip Technology 124373-lds-0236-datasheet Description: TRANS PNP 35V 0.1A TO46
Qualification: MIL-PRF-19500/382
Grade: Military
Power - Max: 400 mW
Voltage - Collector Emitter Breakdown (Max): 35 V
Current - Collector (Ic) (Max): 100 mA
Part Status: Active
Supplier Device Package: TO-46 (TO-206AB)
DC Current Gain (hFE) (Min) @ Ic, Vce: 50 @ 1mA, 500mV
Current - Collector Cutoff (Max): 10µA (ICBO)
Operating Temperature: -65°C ~ 200°C (TJ)
Transistor Type: PNP
Mounting Type: Through Hole
Package / Case: TO-46-3
Packaging: Bulk
Produkt ist nicht verfügbar
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JANTX2N3019 JANTX2N3019 Microchip Technology 122693-lds-0185-datasheet Description: TRANS NPN 80V 1A TO-5
Qualification: MIL-PRF-19500/391
Grade: Military
Power - Max: 800 mW
Voltage - Collector Emitter Breakdown (Max): 80 V
Current - Collector (Ic) (Max): 1 A
Part Status: Active
Supplier Device Package: TO-5
DC Current Gain (hFE) (Min) @ Ic, Vce: 50 @ 500mA, 10V
Current - Collector Cutoff (Max): 10µA (ICBO)
Vce Saturation (Max) @ Ib, Ic: 500mV @ 50mA, 500mA
Operating Temperature: -65°C ~ 200°C (TJ)
Transistor Type: NPN
Mounting Type: Through Hole
Package / Case: TO-205AA, TO-5-3 Metal Can
Packaging: Bulk
Produkt ist nicht verfügbar
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JANTX2N3439 JANTX2N3439 Microchip Technology 8830-lds-0022-datasheet Description: TRANS NPN 350V 1A TO39
Qualification: MIL-PRF-19500/368
Grade: Military
Power - Max: 800 mW
Voltage - Collector Emitter Breakdown (Max): 350 V
Current - Collector (Ic) (Max): 1 A
Part Status: Active
Supplier Device Package: TO-39
DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 20mA, 10V
Current - Collector Cutoff (Max): 2µA
Vce Saturation (Max) @ Ib, Ic: 500mV @ 4mA, 50mA
Operating Temperature: -65°C ~ 200°C (TJ)
Transistor Type: NPN
Mounting Type: Through Hole
Package / Case: TO-205AD, TO-39-3 Metal Can
Packaging: Bulk
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JANTX2N3439L JANTX2N3439L Microchip Technology 124290-lds-0022-1-datasheet Description: TRANS NPN 350V 1A TO5
Power - Max: 800 mW
Voltage - Collector Emitter Breakdown (Max): 350 V
Current - Collector (Ic) (Max): 1 A
Qualification: MIL-PRF-19500/368
Grade: Military
Part Status: Discontinued at Digi-Key
Supplier Device Package: TO-5
DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 20mA, 10V
Current - Collector Cutoff (Max): 2µA
Vce Saturation (Max) @ Ib, Ic: 500mV @ 4mA, 50mA
Operating Temperature: -65°C ~ 200°C (TJ)
Transistor Type: NPN
Mounting Type: Through Hole
Package / Case: TO-205AA, TO-5-3 Metal Can
Packaging: Bulk
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JANTX2N3440 JANTX2N3440 Microchip Technology LDS-0022_2N3439-40.pdf Description: TRANS NPN 250V 1A TO-39
Voltage - Collector Emitter Breakdown (Max): 250 V
Current - Collector (Ic) (Max): 1 A
Part Status: Active
Supplier Device Package: TO-39
DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 20mA, 10V
Current - Collector Cutoff (Max): 2µA
Vce Saturation (Max) @ Ib, Ic: 500mV @ 4mA, 50mA
Operating Temperature: -65°C ~ 200°C (TJ)
Transistor Type: NPN
Mounting Type: Through Hole
Package / Case: TO-205AD, TO-39-3 Metal Can
Packaging: Bulk
Power - Max: 800 mW
Qualification: MIL-PRF-19500/368
Grade: Military
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JANTX2N3440L JANTX2N3440L Microchip Technology 2N3439L-2N3440L-LDS-0022-1-MIL-PRF-19500-368.pdf Description: TRANS NPN 250V 1A TO-5
Power - Max: 800 mW
Voltage - Collector Emitter Breakdown (Max): 250 V
Current - Collector (Ic) (Max): 1 A
Part Status: Active
Supplier Device Package: TO-5
DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 20mA, 10V
Current - Collector Cutoff (Max): 2µA
Vce Saturation (Max) @ Ib, Ic: 500mV @ 4mA, 50mA
Operating Temperature: -65°C ~ 200°C (TJ)
Transistor Type: NPN
Mounting Type: Through Hole
Package / Case: TO-205AA, TO-5-3 Metal Can
Packaging: Bulk
Qualification: MIL-PRF-19500/368
Grade: Military
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JANTX2N3501 JANTX2N3501 Microchip Technology 125197-lds-0276-datasheet Description: TRANS NPN 150V 0.3A TO-39
Qualification: MIL-PRF-19500/366
Grade: Military
Power - Max: 1 W
Voltage - Collector Emitter Breakdown (Max): 150 V
Current - Collector (Ic) (Max): 300 mA
Part Status: Active
Supplier Device Package: TO-39
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 150mA, 10V
Current - Collector Cutoff (Max): 10µA (ICBO)
Vce Saturation (Max) @ Ib, Ic: 400mV @ 15mA, 150mA
Operating Temperature: -65°C ~ 200°C (TJ)
Transistor Type: NPN
Mounting Type: Through Hole
Package / Case: TO-205AD, TO-39-3 Metal Can
Packaging: Bulk
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JANTX2N3501L Microchip Technology 125198-lds-0276-1-datasheet Description: TRANS NPN 150V 0.3A TO-5
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 150mA, 10V
Current - Collector Cutoff (Max): 10µA (ICBO)
Vce Saturation (Max) @ Ib, Ic: 400mV @ 15mA, 150mA
Operating Temperature: -65°C ~ 200°C (TJ)
Transistor Type: NPN
Mounting Type: Through Hole
Package / Case: TO-205AA, TO-5-3 Metal Can
Packaging: Bulk
Power - Max: 1 W
Voltage - Collector Emitter Breakdown (Max): 150 V
Current - Collector (Ic) (Max): 300 mA
Supplier Device Package: TO-5
Qualification: MIL-PRF-19500/366
Grade: Military
Produkt ist nicht verfügbar
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JANTX2N3501UB JANTX2N3501UB Microchip Technology 125200-lds-0276-3-datasheet Description: TRANS NPN 150V 0.3A UB
Qualification: MIL-PRF-19500/366
Power - Max: 500 mW
Voltage - Collector Emitter Breakdown (Max): 150 V
Current - Collector (Ic) (Max): 300 mA
Grade: Military
Supplier Device Package: UB
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 150mA, 10V
Current - Collector Cutoff (Max): 10µA (ICBO)
Vce Saturation (Max) @ Ib, Ic: 400mV @ 15mA, 150mA
Operating Temperature: -65°C ~ 200°C (TJ)
Transistor Type: NPN
Mounting Type: Surface Mount
Package / Case: 3-SMD, No Lead
Packaging: Bulk
Produkt ist nicht verfügbar
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JANTX2N3700 JANTX2N3700 Microchip Technology LDS-0185_2N3700.pdf Description: TRANS NPN 80V 1A TO-18
Qualification: MIL-PRF-19500/391
Grade: Military
Power - Max: 500 mW
Voltage - Collector Emitter Breakdown (Max): 80 V
Current - Collector (Ic) (Max): 1 A
Part Status: Active
Supplier Device Package: TO-18 (TO-206AA)
DC Current Gain (hFE) (Min) @ Ic, Vce: 50 @ 500mA, 10V
Current - Collector Cutoff (Max): 10nA
Vce Saturation (Max) @ Ib, Ic: 500mV @ 50mA, 500mA
Operating Temperature: -65°C ~ 200°C (TJ)
Transistor Type: NPN
Mounting Type: Through Hole
Package / Case: TO-206AA, TO-18-3 Metal Can
Packaging: Bulk
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3+6.65 EUR
100+6.19 EUR
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JANTX2N3700UB JANTX2N3700UB Microchip Technology 2N3700UB-LDS-0185-3-MIL-PRF-19500-391.pdf Description: TRANS NPN 80V 1A UB
Qualification: MIL-PRF-19500/391
Grade: Military
Current - Collector Cutoff (Max): 10nA
Vce Saturation (Max) @ Ib, Ic: 500mV @ 50mA, 500mA
Operating Temperature: -65°C ~ 200°C (TJ)
Transistor Type: NPN
Mounting Type: Surface Mount
Package / Case: 3-SMD, No Lead
Packaging: Bulk
Power - Max: 500 mW
Voltage - Collector Emitter Breakdown (Max): 80 V
Current - Collector (Ic) (Max): 1 A
Part Status: Active
Supplier Device Package: UB
DC Current Gain (hFE) (Min) @ Ic, Vce: 50 @ 500mA, 10V
Produkt ist nicht verfügbar
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JANTX2N3735 JANTX2N3735 Microchip Technology 8978-lds-0173-datasheet Description: TRANS NPN 40V 1.5A TO39
Power - Max: 1 W
Voltage - Collector Emitter Breakdown (Max): 40 V
Current - Collector (Ic) (Max): 1.5 A
Part Status: Active
Supplier Device Package: TO-39 (TO-205AD)
DC Current Gain (hFE) (Min) @ Ic, Vce: 20 @ 1A, 1.5V
Current - Collector Cutoff (Max): 10µA
Vce Saturation (Max) @ Ib, Ic: 900mV @ 100mA, 1A
Operating Temperature: -65°C ~ 200°C (TJ)
Transistor Type: NPN
Mounting Type: Through Hole
Package / Case: TO-205AD, TO-39-3 Metal Can
Packaging: Bulk
Qualification: MIL-PRF-19500/395
Grade: Military
Produkt ist nicht verfügbar
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JANTX2N3735L JANTX2N3735L Microchip Technology 8978-lds-0173-datasheet Description: TRANS NPN 40V 1.5A TO-5
Qualification: MIL-PRF-19500/395
Power - Max: 1 W
Voltage - Collector Emitter Breakdown (Max): 40 V
Current - Collector (Ic) (Max): 1.5 A
Grade: Military
Supplier Device Package: TO-5
DC Current Gain (hFE) (Min) @ Ic, Vce: 20 @ 1A, 1.5V
Current - Collector Cutoff (Max): 10µA
Vce Saturation (Max) @ Ib, Ic: 900mV @ 100mA, 1A
Operating Temperature: -65°C ~ 200°C (TJ)
Transistor Type: NPN
Mounting Type: Through Hole
Package / Case: TO-205AA, TO-5-3 Metal Can
Packaging: Bulk
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JANTX2N3737UB JANTX2N3737UB Microchip Technology 8978-lds-0173-datasheet Description: TRANS NPN 40V 1.5A UB
Qualification: MIL-PRF-19500/395
Power - Max: 500 mW
Voltage - Collector Emitter Breakdown (Max): 40 V
Current - Collector (Ic) (Max): 1.5 A
Grade: Military
Supplier Device Package: UB
DC Current Gain (hFE) (Min) @ Ic, Vce: 20 @ 1A, 1.5V
Current - Collector Cutoff (Max): 10µA (ICBO)
Vce Saturation (Max) @ Ib, Ic: 900mV @ 100mA, 1A
Operating Temperature: -65°C ~ 200°C (TJ)
Transistor Type: NPN
Mounting Type: Surface Mount
Package / Case: 4-SMD, No Lead
Packaging: Bulk
Produkt ist nicht verfügbar
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JANTX2N3810 JANTX2N3810 Microchip Technology 2N3810-2N3811-MIL-PRF-19500-336.pdf Description: TRANS 2PNP 60V 50MA TO-78-6
Packaging: Bulk
Package / Case: TO-78-6 Metal Can
Mounting Type: Through Hole
Transistor Type: 2 PNP (Dual)
Operating Temperature: -65°C ~ 200°C (TJ)
Power - Max: 350mW
Current - Collector (Ic) (Max): 50mA
Voltage - Collector Emitter Breakdown (Max): 60V
Vce Saturation (Max) @ Ib, Ic: 250mV @ 100µA, 1mA
Current - Collector Cutoff (Max): 10µA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 150 @ 1mA, 5V
Supplier Device Package: TO-78-6
Grade: Military
Qualification: MIL-PRF-19500/336
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JANTX2N3810L Microchip Technology 8931-lds-0118-datasheet Description: TRANS 2PNP 60V 0.05A
Qualification: MIL-PRF-19500/336
Grade: Military
Supplier Device Package: TO-78-6
DC Current Gain (hFE) (Min) @ Ic, Vce: 150 @ 1mA, 5V
Current - Collector Cutoff (Max): 10µA (ICBO)
Vce Saturation (Max) @ Ib, Ic: 250mV @ 100µA, 1mA
Voltage - Collector Emitter Breakdown (Max): 60V
Current - Collector (Ic) (Max): 50mA
Power - Max: 350mW
Operating Temperature: -65°C ~ 200°C (TJ)
Transistor Type: 2 PNP (Dual)
Mounting Type: Through Hole
Package / Case: TO-78-6 Metal Can
Packaging: Bulk
Produkt ist nicht verfügbar
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JANTX2N4033 JANTX2N4033 Microchip Technology 6070-2n4029-datasheet Description: TRANS PNP 80V 1A TO-39
Qualification: MIL-PRF-19500/512
Grade: Military
Power - Max: 800 mW
Voltage - Collector Emitter Breakdown (Max): 80 V
Current - Collector (Ic) (Max): 1 A
Part Status: Active
Supplier Device Package: TO-39
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 100mA, 5V
Current - Collector Cutoff (Max): 10µA (ICBO)
Vce Saturation (Max) @ Ib, Ic: 1V @ 100mA, 1A
Operating Temperature: -55°C ~ 200°C (TJ)
Transistor Type: PNP
Mounting Type: Through Hole
Package / Case: TO-205AD, TO-39-3 Metal Can
Packaging: Bulk
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JANTX2N5582 JANTX2N5582 Microchip Technology 6091-2n5581-datasheet Description: TRANS NPN 50V 0.8A TO46-3
Qualification: MIL-PRF-19500/423
Grade: Military
Power - Max: 500 mW
Voltage - Collector Emitter Breakdown (Max): 50 V
Current - Collector (Ic) (Max): 800 mA
Supplier Device Package: TO-46-3
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 150mA, 10V
Current - Collector Cutoff (Max): 10µA (ICBO)
Vce Saturation (Max) @ Ib, Ic: 1V @ 50mA, 500mA
Operating Temperature: -55°C ~ 200°C (TJ)
Transistor Type: NPN
Mounting Type: Through Hole
Package / Case: TO-206AB, TO-46-3 Metal Can
Packaging: Bulk
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JANTX2N918UB Microchip Technology Description: TRANS NPN 15V 0.05A UB
Packaging: Bulk
Package / Case: 4-SMD, No Lead
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: -65°C ~ 200°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 400mV @ 1mA, 10mA
Current - Collector Cutoff (Max): 1µA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 20 @ 3mA, 1V
Supplier Device Package: UB
Part Status: Active
Current - Collector (Ic) (Max): 50 mA
Voltage - Collector Emitter Breakdown (Max): 15 V
Power - Max: 200 mW
Grade: Military
Qualification: MIL-PRF-19500/301
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JANTXV1N4249 JANTXV1N4249 Microchip Technology 123513-lds-0191-datasheet Description: DIODE GEN PURP 1KV 1A AXIAL
Current - Reverse Leakage @ Vr: 1 µA @ 1000 V
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 3 A
Voltage - DC Reverse (Vr) (Max): 1000 V
Operating Temperature - Junction: -65°C ~ 175°C
Supplier Device Package: A, Axial
Current - Average Rectified (Io): 1A
Technology: Standard
Reverse Recovery Time (trr): 5 µs
Speed: Standard Recovery >500ns, > 200mA (Io)
Mounting Type: Through Hole
Package / Case: A, Axial
Packaging: Bulk
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JANTX1N5551 LDS-0230%2C+1N5550+thru+1N5554%2C+MIL-PRF-19500-420.pdf
JANTX1N5551
Hersteller: Microchip Technology
Description: DIODE STANDARD 400V 5A B AXIAL
Packaging: Bulk
Package / Case: B, Axial
Mounting Type: Through Hole
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): 2 µs
Technology: Standard
Current - Average Rectified (Io): 5A
Supplier Device Package: B, Axial
Operating Temperature - Junction: -65°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 400 V
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 9 A
Current - Reverse Leakage @ Vr: 1 µA @ 400 V
Grade: Military
Qualification: MIL-PRF-19500/420
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JANTX1N5552 LDS-0230%2C+1N5550+thru+1N5554%2C+MIL-PRF-19500-420.pdf
JANTX1N5552
Hersteller: Microchip Technology
Description: DIODE STANDARD 600V 5A B AXIAL
Packaging: Bulk
Package / Case: B, Axial
Mounting Type: Through Hole
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): 2 µs
Technology: Standard
Current - Average Rectified (Io): 5A
Supplier Device Package: B, Axial
Operating Temperature - Junction: -65°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 9 A
Current - Reverse Leakage @ Vr: 1 µA @ 600 V
Grade: Military
Qualification: MIL-PRF-19500/420
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JANTX1N5553 LDS-0230%2C+1N5550+thru+1N5554%2C+MIL-PRF-19500-420.pdf
JANTX1N5553
Hersteller: Microchip Technology
Description: DIODE STANDARD 800V 5A B AXIAL
Packaging: Bulk
Package / Case: B, Axial
Mounting Type: Through Hole
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): 2 µs
Technology: Standard
Current - Average Rectified (Io): 5A
Supplier Device Package: B, Axial
Operating Temperature - Junction: -65°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 800 V
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 9 A
Current - Reverse Leakage @ Vr: 1 µA @ 800 V
Grade: Military
Qualification: MIL-PRF-19500/420
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JANTX1N5554 LDS-0230%2C+1N5550+thru+1N5554%2C+MIL-PRF-19500-420.pdf
JANTX1N5554
Hersteller: Microchip Technology
Description: DIODE STANDARD 1000V 5A B AXIAL
Packaging: Bulk
Package / Case: B, Axial
Mounting Type: Through Hole
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): 2 µs
Technology: Standard
Current - Average Rectified (Io): 5A
Supplier Device Package: B, Axial
Operating Temperature - Junction: -65°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 1000 V
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 9 A
Current - Reverse Leakage @ Vr: 2 µA @ 1000 V
Grade: Military
Qualification: MIL-PRF-19500/420
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JANTX1N5618 SD46A%2C+1N5614+thru+1N5622%2C+MIL-PRF-19500-427.pdf
JANTX1N5618
Hersteller: Microchip Technology
Description: DIODE STANDARD 600V 1A AXIAL
Qualification: MIL-PRF-19500/427
Current - Reverse Leakage @ Vr: 500 nA @ 600 V
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 3 A
Voltage - DC Reverse (Vr) (Max): 600 V
Grade: Military
Operating Temperature - Junction: -65°C ~ 200°C
Supplier Device Package: A, Axial
Current - Average Rectified (Io): 1A
Technology: Standard
Reverse Recovery Time (trr): 2 µs
Speed: Standard Recovery >500ns, > 200mA (Io)
Mounting Type: Through Hole
Package / Case: A, Axial
Packaging: Bulk
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JANTX1N5804
Hersteller: Microchip Technology
Description: DIODE STANDARD 100V 1A AXIAL
Packaging: Bulk
Package / Case: A, Axial
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 25 ns
Technology: Standard
Capacitance @ Vr, F: 25pF @ 10V, 1MHz
Current - Average Rectified (Io): 1A
Operating Temperature - Junction: -65°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 875 mV @ 1 A
Current - Reverse Leakage @ Vr: 1 µA @ 100 V
Supplier Device Package: A, Axial
Grade: Military
Qualification: MIL-PRF-19500/477
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JANTX1N5804US LDS-0211+%282%29%2C+1N5802-1N5804-1N5806%2C+MIL-PRF-19500-477.pdf
JANTX1N5804US
Hersteller: Microchip Technology
Description: DIODE STANDARD 100V 1A D5A
Packaging: Bulk
Package / Case: SQ-MELF, A
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 25 ns
Technology: Standard
Capacitance @ Vr, F: 25pF @ 10V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: D-5A
Operating Temperature - Junction: -65°C ~ 175°C
Grade: Military
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 875 mV @ 1 A
Current - Reverse Leakage @ Vr: 1 µA @ 100 V
Qualification: MIL-PRF-19500/477
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JANTX1N6105AUS lds-0277-1.pdf
JANTX1N6105AUS
Hersteller: Microchip Technology
Description: TVS DIODE 6.9VWM 13.4V B SQMELF
Qualification: MIL-PRF-19500/516
Grade: Military
Power Line Protection: No
Power - Peak Pulse: 500W
Voltage - Clamping (Max) @ Ipp: 13.4V
Voltage - Breakdown (Min): 8.65V
Bidirectional Channels: 1
Supplier Device Package: B, SQ-MELF
Voltage - Reverse Standoff (Typ): 6.9V
Current - Peak Pulse (10/1000µs): 37.3A
Applications: General Purpose
Operating Temperature: -55°C ~ 175°C (TJ)
Type: Zener
Mounting Type: Surface Mount
Package / Case: SQ-MELF, B
Packaging: Bulk
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JANTX1N6118AUS lds-0277-1.pdf
JANTX1N6118AUS
Hersteller: Microchip Technology
Description: TVS DIODE 25.1VWM 45.7VC SQMELF
Voltage - Clamping (Max) @ Ipp: 45.7V
Voltage - Breakdown (Min): 31.4V
Bidirectional Channels: 1
Supplier Device Package: B, SQ-MELF
Voltage - Reverse Standoff (Typ): 25.1V
Current - Peak Pulse (10/1000µs): 10.9A
Applications: General Purpose
Operating Temperature: -55°C ~ 175°C (TJ)
Type: Zener
Mounting Type: Surface Mount
Package / Case: SQ-MELF, B
Packaging: Bulk
Part Status: Active
Power Line Protection: No
Power - Peak Pulse: 500W
Qualification: MIL-PRF-19500/516
Grade: Military
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JANTX1N6120AUS 127892-lds-0277-1-datasheet
JANTX1N6120AUS
Hersteller: Microchip Technology
Description: TVS DIODE 29.7VWM 53.6VC SQ-MELF
Produkt ist nicht verfügbar
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JANTX1N6123A 127891-lds-0277-datasheet
JANTX1N6123A
Hersteller: Microchip Technology
Description: TVS DIODE 38.8V 70.1V AXIAL
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JANTX1N6126A lds-0277.pdf
JANTX1N6126A
Hersteller: Microchip Technology
Description: TVS DIODE 51.7VWM 97.1V AXIAL
Qualification: MIL-PRF-19500/516
Grade: Military
Power Line Protection: No
Power - Peak Pulse: 500W
Voltage - Clamping (Max) @ Ipp: 97.1V
Voltage - Breakdown (Min): 64.6V
Bidirectional Channels: 1
Supplier Device Package: B, Axial
Voltage - Reverse Standoff (Typ): 51.7V
Current - Peak Pulse (10/1000µs): 5.1A
Applications: General Purpose
Operating Temperature: -55°C ~ 175°C (TJ)
Type: Zener
Mounting Type: Through Hole
Package / Case: B, Axial
Packaging: Bulk
Produkt ist nicht verfügbar
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JANTX1N6126AUS lds-0277-1.pdf
JANTX1N6126AUS
Hersteller: Microchip Technology
Description: TVS DIODE 51.7VWM 97.1VC SQMELF
Packaging: Bulk
Package / Case: SQ-MELF, B
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 175°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 5.1A
Voltage - Reverse Standoff (Typ): 51.7V
Supplier Device Package: B, SQ-MELF
Bidirectional Channels: 1
Voltage - Breakdown (Min): 64.6V
Voltage - Clamping (Max) @ Ipp: 97.1V
Power - Peak Pulse: 500W
Power Line Protection: No
Part Status: Discontinued at Digi-Key
Grade: Military
Qualification: MIL-PRF-19500/516
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JANTX1N6467 10875-sa4-21-datasheet
JANTX1N6467
Hersteller: Microchip Technology
Description: TVS DIODE 40.3VWM 63.5V AXIAL
Voltage - Breakdown (Min): 43.7V
Unidirectional Channels: 1
Supplier Device Package: B, Axial
Voltage - Reverse Standoff (Typ): 40.3V
Current - Peak Pulse (10/1000µs): 45A (8/20µs)
Applications: General Purpose
Operating Temperature: -55°C ~ 175°C (TJ)
Type: Zener
Mounting Type: Through Hole
Package / Case: B, Axial
Packaging: Bulk
Qualification: MIL-PRF-19500/551
Grade: Military
Power Line Protection: No
Power - Peak Pulse: 500W
Voltage - Clamping (Max) @ Ipp: 63.5V
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JANTX1N6472 11064-sd49a-datasheet
JANTX1N6472
Hersteller: Microchip Technology
Description: TVS DIODE 15VWM 26.5VC AXIAL
Qualification: MIL-PRF-19500/552
Grade: Military
Power Line Protection: No
Power - Peak Pulse: 1500W (1.5kW)
Voltage - Clamping (Max) @ Ipp: 26.5V
Voltage - Breakdown (Min): 16.4V
Unidirectional Channels: 1
Supplier Device Package: Axial
Voltage - Reverse Standoff (Typ): 15V
Current - Peak Pulse (10/1000µs): 322A (8/20µs)
Applications: General Purpose
Operating Temperature: -55°C ~ 175°C (TJ)
Type: Zener
Mounting Type: Through Hole
Package / Case: G, Axial
Packaging: Bulk
Produkt ist nicht verfügbar
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JANTX1N6620 10972-sa7-55-datasheet
JANTX1N6620
Hersteller: Microchip Technology
Description: DIODE GEN PURP 220V 2A AXIAL
Current - Reverse Leakage @ Vr: 500 nA @ 220 V
Voltage - Forward (Vf) (Max) @ If: 1.4 V @ 1.2 A
Voltage - DC Reverse (Vr) (Max): 220 V
Part Status: Active
Operating Temperature - Junction: -65°C ~ 150°C
Supplier Device Package: Axial
Current - Average Rectified (Io): 2A
Capacitance @ Vr, F: 10pF @ 10V, 1MHz
Technology: Standard
Reverse Recovery Time (trr): 30 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Through Hole
Package / Case: A, Axial
Packaging: Bulk
Produkt ist nicht verfügbar
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JANTX1N6620US 11068-sd52a-datasheet
JANTX1N6620US
Hersteller: Microchip Technology
Description: DIODE GEN PURP 220V 2A D-5A
Current - Reverse Leakage @ Vr: 500 nA @ 220 V
Voltage - Forward (Vf) (Max) @ If: 1.4 V @ 1.2 A
Voltage - DC Reverse (Vr) (Max): 220 V
Part Status: Active
Operating Temperature - Junction: -65°C ~ 150°C
Supplier Device Package: D-5A
Current - Average Rectified (Io): 2A
Capacitance @ Vr, F: 10pF @ 10V, 1MHz
Technology: Standard
Reverse Recovery Time (trr): 30 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: SQ-MELF, A
Packaging: Bulk
Produkt ist nicht verfügbar
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JANTX1N6621 10972-sa7-55-datasheet
JANTX1N6621
Hersteller: Microchip Technology
Description: DIODE GEN PURP 440V 2A AXIAL
Current - Reverse Leakage @ Vr: 500 nA @ 440 V
Voltage - Forward (Vf) (Max) @ If: 1.4 V @ 1.2 A
Voltage - DC Reverse (Vr) (Max): 440 V
Part Status: Active
Operating Temperature - Junction: -65°C ~ 150°C
Current - Average Rectified (Io): 2A
Capacitance @ Vr, F: 10pF @ 10V, 1MHz
Technology: Standard
Reverse Recovery Time (trr): 30 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Through Hole
Package / Case: A, Axial
Packaging: Bulk
Produkt ist nicht verfügbar
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JANTX1N6621US 11068-sd52a-datasheet
JANTX1N6621US
Hersteller: Microchip Technology
Description: DIODE GEN PURP 440V 2A D-5A
Qualification: MIL-PRF-19500/585
Grade: Military
Current - Reverse Leakage @ Vr: 500 nA @ 440 V
Voltage - Forward (Vf) (Max) @ If: 1.4 V @ 1.2 A
Voltage - DC Reverse (Vr) (Max): 440 V
Part Status: Active
Operating Temperature - Junction: -65°C ~ 150°C
Supplier Device Package: D-5A
Current - Average Rectified (Io): 2A
Capacitance @ Vr, F: 10pF @ 10V, 1MHz
Technology: Standard
Reverse Recovery Time (trr): 30 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: SQ-MELF, A
Packaging: Bulk
Produkt ist nicht verfügbar
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JANTX1N6622US 11068-sd52a-datasheet
JANTX1N6622US
Hersteller: Microchip Technology
Description: DIODE GEN PURP 660V 2A D-5A
Current - Reverse Leakage @ Vr: 500 nA @ 660 V
Voltage - Forward (Vf) (Max) @ If: 1.4 V @ 1.2 A
Voltage - DC Reverse (Vr) (Max): 660 V
Part Status: Active
Operating Temperature - Junction: -65°C ~ 150°C
Supplier Device Package: D-5A
Current - Average Rectified (Io): 2A
Capacitance @ Vr, F: 10pF @ 10V, 1MHz
Technology: Standard
Reverse Recovery Time (trr): 30 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: SQ-MELF, A
Packaging: Bulk
Produkt ist nicht verfügbar
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JANTX1N6623US 11068-sd52a-datasheet
JANTX1N6623US
Hersteller: Microchip Technology
Description: DIODE GEN PURP 880V 1A D5A
Produkt ist nicht verfügbar
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JANTX1N829-1 125462-lds-0220-datasheet
JANTX1N829-1
Hersteller: Microchip Technology
Description: DIODE ZENER 6.2V 500MW DO35
Current - Reverse Leakage @ Vr: 2 µA @ 3 V
Power - Max: 500 mW
Part Status: Active
Supplier Device Package: DO-204AH (DO-35)
Impedance (Max) (Zzt): 15 Ohms
Voltage - Zener (Nom) (Vz): 6.2 V
Mounting Type: Through Hole
Package / Case: DO-204AH, DO-35, Axial
Tolerance: ±5%
Packaging: Bulk
Qualification: MIL-PRF-19500/159
Grade: Military
Produkt ist nicht verfügbar
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JANTX1N829UR-1 11037-lds-0220-1-datasheet
Hersteller: Microchip Technology
Description: DIODE ZENER 6.2V 500MW DO213AA
Current - Reverse Leakage @ Vr: 2 µA @ 3 V
Supplier Device Package: DO-213AA
Impedance (Max) (Zzt): 15 Ohms
Voltage - Zener (Nom) (Vz): 6.2 V
Mounting Type: Surface Mount
Package / Case: DO-213AA
Tolerance: ±5%
Packaging: Bulk
Qualification: MIL-PRF-19500/159
Grade: Military
Power - Max: 500 mW
Part Status: Active
Produkt ist nicht verfügbar
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JANTX2N2219 2N2218-2N2219AL-LDS0091-MIL-PRF-19500-251.pdf
JANTX2N2219
Hersteller: Microchip Technology
Description: TRANS NPN 30V 0.8A TO-39
Packaging: Bulk
Package / Case: TO-205AD, TO-39-3 Metal Can
Mounting Type: Through Hole
Transistor Type: NPN
Operating Temperature: -55°C ~ 200°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 1.6V @ 50mA, 500mA
Current - Collector Cutoff (Max): 10nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 150mA, 10V
Supplier Device Package: TO-39
Part Status: Discontinued at Digi-Key
Current - Collector (Ic) (Max): 800 mA
Voltage - Collector Emitter Breakdown (Max): 30 V
Power - Max: 800 mW
Grade: Military
Qualification: MIL-PRF-19500/251
Produkt ist nicht verfügbar
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JANTX2N2219A 2N2218-2N2219AL-LDS0091-MIL-PRF-19500-251.pdf
JANTX2N2219A
Hersteller: Microchip Technology
Description: TRANS NPN 50V 0.8A TO-39
Packaging: Bulk
Package / Case: TO-205AD, TO-39-3 Metal Can
Mounting Type: Through Hole
Transistor Type: NPN
Operating Temperature: -55°C ~ 200°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 1V @ 50mA, 500mA
Current - Collector Cutoff (Max): 10nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 150mA, 10V
Supplier Device Package: TO-39
Part Status: Active
Current - Collector (Ic) (Max): 800 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 800 mW
Grade: Military
Qualification: MIL-PRF-19500/251
Produkt ist nicht verfügbar
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Jantx2N2219AL 2N2218-2N2219AL-LDS0091-MIL-PRF-19500-251.pdf
Jantx2N2219AL
Hersteller: Microchip Technology
Description: TRANS NPN 50V 0.8A TO-39
Packaging: Bulk
Package / Case: TO-205AD, TO-39-3 Metal Can
Mounting Type: Through Hole
Transistor Type: NPN
Operating Temperature: -55°C ~ 200°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 1V @ 50mA, 500mA
Current - Collector Cutoff (Max): 10nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 150mA, 10V
Supplier Device Package: TO-39
Part Status: Active
Current - Collector (Ic) (Max): 800 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 800 mW
Grade: Military
Qualification: MIL-PRF-19500/251
Produkt ist nicht verfügbar
Mindestbestellmenge: 100 Stücke
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JANTX2N2222A MIL-PRF-19500_255AA_wAmendment1_5-19-16.pdf
JANTX2N2222A
Hersteller: Microchip Technology
Description: TRANS NPN 50V 0.8A TO-218
Packaging: Bulk
Package / Case: TO-206AA, TO-18-3 Metal Can
Mounting Type: Through Hole
Transistor Type: NPN
Operating Temperature: -65°C ~ 200°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 1V @ 50mA, 500mA
Current - Collector Cutoff (Max): 50nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 150mA, 10V
Supplier Device Package: TO-218
Part Status: Active
Current - Collector (Ic) (Max): 800 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 500 mW
Grade: Military
Qualification: MIL-PRF-19500/255
Produkt ist nicht verfügbar
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JANTX2N2222AUA MIL-PRF-19500_255AA_wAmendment1_5-19-16.pdf
JANTX2N2222AUA
Hersteller: Microchip Technology
Description: TRANS NPN 50V 0.8A 4-SMD
Packaging: Bulk
Package / Case: 4-SMD
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: -65°C ~ 200°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 1V @ 50mA, 500mA
Current - Collector Cutoff (Max): 50nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 150mA, 10V
Supplier Device Package: 4-SMD
Part Status: Active
Current - Collector (Ic) (Max): 800 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 650 mW
Grade: Military
Qualification: MIL-PRF-19500/255
auf Bestellung 286 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPreis
1+35.25 EUR
100+32.73 EUR
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JANTX2N2222AUB MIL-PRF-19500_255AA_wAmendment1_5-19-16.pdf
JANTX2N2222AUB
Hersteller: Microchip Technology
Description: TRANS NPN 50V 0.8A UB
Packaging: Bulk
Package / Case: 3-SMD, No Lead
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: -65°C ~ 200°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 1V @ 50mA, 500mA
Current - Collector Cutoff (Max): 50nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 150mA, 10V
Supplier Device Package: UB
Part Status: Active
Current - Collector (Ic) (Max): 800 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 500 mW
Grade: Military
Qualification: MIL-PRF-19500/255
Produkt ist nicht verfügbar
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JANTX2N2369A 2N2369A-2N4449-MIL-PRF-19500-317.pdf
JANTX2N2369A
Hersteller: Microchip Technology
Description: TRANS NPN 15V TO18
Packaging: Bulk
Package / Case: TO-206AA, TO-18-3 Metal Can
Mounting Type: Through Hole
Transistor Type: NPN
Operating Temperature: -65°C ~ 200°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 450mV @ 10mA, 100mA
Current - Collector Cutoff (Max): 400nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 20 @ 100mA, 1V
Supplier Device Package: TO-18 (TO-206AA)
Part Status: Active
Voltage - Collector Emitter Breakdown (Max): 15 V
Power - Max: 360 mW
Grade: Military
Qualification: MIL-PRF-19500/317
auf Bestellung 87 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPreis
3+6.92 EUR
Mindestbestellmenge: 3 Stücke
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JANTX2N2369AUB 2N2369A-2N4449-MIL-PRF-19500-317.pdf
JANTX2N2369AUB
Hersteller: Microchip Technology
Description: TRANS NPN 20V UB
Packaging: Bulk
Package / Case: 3-SMD, No Lead
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: -65°C ~ 200°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 450mV @ 10mA, 100mA
Current - Collector Cutoff (Max): 400nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 20 @ 100mA, 1V
Supplier Device Package: UB
Part Status: Active
Voltage - Collector Emitter Breakdown (Max): 20 V
Power - Max: 400 mW
Grade: Military
Qualification: MIL-PRF-19500/317
Produkt ist nicht verfügbar
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JANTX2N2484UB 2N2484+MIL-PRF-19500_376.pdf
JANTX2N2484UB
Hersteller: Microchip Technology
Description: TRANS NPN 60V 0.05A UB
Packaging: Bulk
Package / Case: 3-SMD, No Lead
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: -65°C ~ 200°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 300mV @ 100µA, 1mA
Current - Collector Cutoff (Max): 2nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 225 @ 10mA, 5V
Supplier Device Package: UB
Current - Collector (Ic) (Max): 50 mA
Voltage - Collector Emitter Breakdown (Max): 60 V
Power - Max: 360 mW
Grade: Military
Qualification: MIL-PRF-19500/376
Produkt ist nicht verfügbar
Mindestbestellmenge: 100 Stücke
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JANTX2N2905A 2N2904-2N2905-MIL-PRF-19500-290.pdf
JANTX2N2905A
Hersteller: Microchip Technology
Description: TRANS PNP 60V 0.6A TO39
Packaging: Bulk
Package / Case: TO-205AD, TO-39-3 Metal Can
Mounting Type: Through Hole
Transistor Type: PNP
Operating Temperature: -65°C ~ 200°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 1.6V @ 50mA, 500mA
Current - Collector Cutoff (Max): 1µA
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 150mA, 10V
Supplier Device Package: TO-39 (TO-205AD)
Part Status: Active
Current - Collector (Ic) (Max): 600 mA
Voltage - Collector Emitter Breakdown (Max): 60 V
Power - Max: 800 mW
Grade: Military
Qualification: MIL-PRF-19500/290
Produkt ist nicht verfügbar
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JANTX2N2905AL LDS-0186_2N2904-05%28AL%29.pdf
JANTX2N2905AL
Hersteller: Microchip Technology
Description: TRANS PNP 60V 0.6A TO-5
Packaging: Bulk
Package / Case: TO-205AA, TO-5-3 Metal Can
Mounting Type: Through Hole
Transistor Type: PNP
Operating Temperature: -65°C ~ 200°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 1.6V @ 50mA, 500mA
Current - Collector Cutoff (Max): 1µA
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 150mA, 10V
Supplier Device Package: TO-5
Part Status: Active
Current - Collector (Ic) (Max): 600 mA
Voltage - Collector Emitter Breakdown (Max): 60 V
Power - Max: 800 mW
Grade: Military
Qualification: MIL-PRF-19500/290
Produkt ist nicht verfügbar
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JANTX2N2906A 8896-lds-0059-datasheet
JANTX2N2906A
Hersteller: Microchip Technology
Description: TRANS PNP 60V 0.6A TO18
Qualification: MIL-PRF-19500/291
Grade: Military
Power - Max: 500 mW
Voltage - Collector Emitter Breakdown (Max): 60 V
Current - Collector (Ic) (Max): 600 mA
Part Status: Active
Supplier Device Package: TO-18 (TO-206AA)
DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 150mA, 10V
Operating Temperature: -65°C ~ 200°C (TJ)
Transistor Type: PNP
Mounting Type: Through Hole
Package / Case: TO-206AA, TO-18-3 Metal Can
Packaging: Bulk
Current - Collector Cutoff (Max): 50nA
Vce Saturation (Max) @ Ib, Ic: 1.6V @ 50mA, 500mA
Produkt ist nicht verfügbar
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JANTX2N2906AUB 8896-lds-0059-datasheet
JANTX2N2906AUB
Hersteller: Microchip Technology
Description: TRANS PNP 60V 0.6A UB
Power - Max: 500 mW
Voltage - Collector Emitter Breakdown (Max): 60 V
Current - Collector (Ic) (Max): 600 mA
Part Status: Active
Supplier Device Package: UB
DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 150mA, 10V
Qualification: MIL-PRF-19500/291
Grade: Military
Current - Collector Cutoff (Max): 50nA
Vce Saturation (Max) @ Ib, Ic: 1.6V @ 50mA, 500mA
Operating Temperature: -65°C ~ 200°C (TJ)
Transistor Type: PNP
Mounting Type: Surface Mount
Package / Case: 3-SMD, No Lead
Packaging: Bulk
Produkt ist nicht verfügbar
Mindestbestellmenge: 100 Stücke
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JANTX2N2907A MIL-PRF-19500_291Y_wAmendment1_7-10-19.pdf
JANTX2N2907A
Hersteller: Microchip Technology
Description: TRANS PNP 60V 0.6A TO206AA
Packaging: Bulk
Package / Case: TO-206AA, TO-18-3 Metal Can
Mounting Type: Through Hole
Transistor Type: PNP
Operating Temperature: -65°C ~ 200°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 1.6V @ 50mA, 500mA
Current - Collector Cutoff (Max): 50nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 150mA, 10V
Supplier Device Package: TO-206AA (TO-18)
Grade: Military
Part Status: Active
Current - Collector (Ic) (Max): 600 mA
Voltage - Collector Emitter Breakdown (Max): 60 V
Power - Max: 500 mW
Qualification: MIL-PRF-19500/291
Produkt ist nicht verfügbar
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Jantx2N2907AL MIL-PRF-19500_291Y_wAmendment1_7-10-19.pdf
Jantx2N2907AL
Hersteller: Microchip Technology
Description: TRANS PNP 60V 0.6A TO206AA
Packaging: Bulk
Package / Case: TO-206AA, TO-18-3 Metal Can
Mounting Type: Through Hole
Transistor Type: PNP
Operating Temperature: -65°C ~ 200°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 1.6V @ 50mA, 500mA
Current - Collector Cutoff (Max): 50nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 150mA, 10V
Supplier Device Package: TO-206AA (TO-18)
Grade: Military
Part Status: Discontinued at Digi-Key
Current - Collector (Ic) (Max): 600 mA
Voltage - Collector Emitter Breakdown (Max): 60 V
Power - Max: 500 mW
Qualification: MIL-PRF-19500/291
Produkt ist nicht verfügbar
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JANTX2N2907AUA MIL-PRF-19500_291Y_wAmendment1_7-10-19.pdf
JANTX2N2907AUA
Hersteller: Microchip Technology
Description: TRANS PNP 60V 0.6A UA
Packaging: Bulk
Package / Case: 4-SMD, No Lead
Mounting Type: Surface Mount
Transistor Type: PNP
Operating Temperature: -65°C ~ 200°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 1.6V @ 50mA, 500mA
Current - Collector Cutoff (Max): 50nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 150mA, 10V
Supplier Device Package: UA
Grade: Military
Current - Collector (Ic) (Max): 600 mA
Voltage - Collector Emitter Breakdown (Max): 60 V
Power - Max: 500 mW
Qualification: MIL-PRF-19500/291
Produkt ist nicht verfügbar
Mindestbestellmenge: 100 Stücke
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JANTX2N2907AUB MIL-PRF-19500_291Y_wAmendment1_7-10-19.pdf
JANTX2N2907AUB
Hersteller: Microchip Technology
Description: TRANS PNP 60V 0.6A UB
Packaging: Bulk
Package / Case: 4-SMD, No Lead
Mounting Type: Surface Mount
Transistor Type: PNP
Operating Temperature: -65°C ~ 200°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 1.6V @ 50mA, 500mA
Current - Collector Cutoff (Max): 50nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 150mA, 10V
Supplier Device Package: UB
Grade: Military
Part Status: Active
Current - Collector (Ic) (Max): 600 mA
Voltage - Collector Emitter Breakdown (Max): 60 V
Power - Max: 500 mW
Qualification: MIL-PRF-19500/291
auf Bestellung 5106 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPreis
2+9.35 EUR
100+8.68 EUR
Mindestbestellmenge: 2 Stücke
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JANTX2N2946A 124373-lds-0236-datasheet
Hersteller: Microchip Technology
Description: TRANS PNP 35V 0.1A TO46
Qualification: MIL-PRF-19500/382
Grade: Military
Power - Max: 400 mW
Voltage - Collector Emitter Breakdown (Max): 35 V
Current - Collector (Ic) (Max): 100 mA
Part Status: Active
Supplier Device Package: TO-46 (TO-206AB)
DC Current Gain (hFE) (Min) @ Ic, Vce: 50 @ 1mA, 500mV
Current - Collector Cutoff (Max): 10µA (ICBO)
Operating Temperature: -65°C ~ 200°C (TJ)
Transistor Type: PNP
Mounting Type: Through Hole
Package / Case: TO-46-3
Packaging: Bulk
Produkt ist nicht verfügbar
Mindestbestellmenge: 100 Stücke
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JANTX2N3019 122693-lds-0185-datasheet
JANTX2N3019
Hersteller: Microchip Technology
Description: TRANS NPN 80V 1A TO-5
Qualification: MIL-PRF-19500/391
Grade: Military
Power - Max: 800 mW
Voltage - Collector Emitter Breakdown (Max): 80 V
Current - Collector (Ic) (Max): 1 A
Part Status: Active
Supplier Device Package: TO-5
DC Current Gain (hFE) (Min) @ Ic, Vce: 50 @ 500mA, 10V
Current - Collector Cutoff (Max): 10µA (ICBO)
Vce Saturation (Max) @ Ib, Ic: 500mV @ 50mA, 500mA
Operating Temperature: -65°C ~ 200°C (TJ)
Transistor Type: NPN
Mounting Type: Through Hole
Package / Case: TO-205AA, TO-5-3 Metal Can
Packaging: Bulk
Produkt ist nicht verfügbar
Mindestbestellmenge: 100 Stücke
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JANTX2N3439 8830-lds-0022-datasheet
JANTX2N3439
Hersteller: Microchip Technology
Description: TRANS NPN 350V 1A TO39
Qualification: MIL-PRF-19500/368
Grade: Military
Power - Max: 800 mW
Voltage - Collector Emitter Breakdown (Max): 350 V
Current - Collector (Ic) (Max): 1 A
Part Status: Active
Supplier Device Package: TO-39
DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 20mA, 10V
Current - Collector Cutoff (Max): 2µA
Vce Saturation (Max) @ Ib, Ic: 500mV @ 4mA, 50mA
Operating Temperature: -65°C ~ 200°C (TJ)
Transistor Type: NPN
Mounting Type: Through Hole
Package / Case: TO-205AD, TO-39-3 Metal Can
Packaging: Bulk
auf Bestellung 29 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPreis
1+18.02 EUR
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JANTX2N3439L 124290-lds-0022-1-datasheet
JANTX2N3439L
Hersteller: Microchip Technology
Description: TRANS NPN 350V 1A TO5
Power - Max: 800 mW
Voltage - Collector Emitter Breakdown (Max): 350 V
Current - Collector (Ic) (Max): 1 A
Qualification: MIL-PRF-19500/368
Grade: Military
Part Status: Discontinued at Digi-Key
Supplier Device Package: TO-5
DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 20mA, 10V
Current - Collector Cutoff (Max): 2µA
Vce Saturation (Max) @ Ib, Ic: 500mV @ 4mA, 50mA
Operating Temperature: -65°C ~ 200°C (TJ)
Transistor Type: NPN
Mounting Type: Through Hole
Package / Case: TO-205AA, TO-5-3 Metal Can
Packaging: Bulk
Produkt ist nicht verfügbar
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JANTX2N3440 LDS-0022_2N3439-40.pdf
JANTX2N3440
Hersteller: Microchip Technology
Description: TRANS NPN 250V 1A TO-39
Voltage - Collector Emitter Breakdown (Max): 250 V
Current - Collector (Ic) (Max): 1 A
Part Status: Active
Supplier Device Package: TO-39
DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 20mA, 10V
Current - Collector Cutoff (Max): 2µA
Vce Saturation (Max) @ Ib, Ic: 500mV @ 4mA, 50mA
Operating Temperature: -65°C ~ 200°C (TJ)
Transistor Type: NPN
Mounting Type: Through Hole
Package / Case: TO-205AD, TO-39-3 Metal Can
Packaging: Bulk
Power - Max: 800 mW
Qualification: MIL-PRF-19500/368
Grade: Military
Produkt ist nicht verfügbar
Mindestbestellmenge: 100 Stücke
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JANTX2N3440L 2N3439L-2N3440L-LDS-0022-1-MIL-PRF-19500-368.pdf
JANTX2N3440L
Hersteller: Microchip Technology
Description: TRANS NPN 250V 1A TO-5
Power - Max: 800 mW
Voltage - Collector Emitter Breakdown (Max): 250 V
Current - Collector (Ic) (Max): 1 A
Part Status: Active
Supplier Device Package: TO-5
DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 20mA, 10V
Current - Collector Cutoff (Max): 2µA
Vce Saturation (Max) @ Ib, Ic: 500mV @ 4mA, 50mA
Operating Temperature: -65°C ~ 200°C (TJ)
Transistor Type: NPN
Mounting Type: Through Hole
Package / Case: TO-205AA, TO-5-3 Metal Can
Packaging: Bulk
Qualification: MIL-PRF-19500/368
Grade: Military
Produkt ist nicht verfügbar
Mindestbestellmenge: 100 Stücke
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JANTX2N3501 125197-lds-0276-datasheet
JANTX2N3501
Hersteller: Microchip Technology
Description: TRANS NPN 150V 0.3A TO-39
Qualification: MIL-PRF-19500/366
Grade: Military
Power - Max: 1 W
Voltage - Collector Emitter Breakdown (Max): 150 V
Current - Collector (Ic) (Max): 300 mA
Part Status: Active
Supplier Device Package: TO-39
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 150mA, 10V
Current - Collector Cutoff (Max): 10µA (ICBO)
Vce Saturation (Max) @ Ib, Ic: 400mV @ 15mA, 150mA
Operating Temperature: -65°C ~ 200°C (TJ)
Transistor Type: NPN
Mounting Type: Through Hole
Package / Case: TO-205AD, TO-39-3 Metal Can
Packaging: Bulk
Produkt ist nicht verfügbar
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JANTX2N3501L 125198-lds-0276-1-datasheet
Hersteller: Microchip Technology
Description: TRANS NPN 150V 0.3A TO-5
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 150mA, 10V
Current - Collector Cutoff (Max): 10µA (ICBO)
Vce Saturation (Max) @ Ib, Ic: 400mV @ 15mA, 150mA
Operating Temperature: -65°C ~ 200°C (TJ)
Transistor Type: NPN
Mounting Type: Through Hole
Package / Case: TO-205AA, TO-5-3 Metal Can
Packaging: Bulk
Power - Max: 1 W
Voltage - Collector Emitter Breakdown (Max): 150 V
Current - Collector (Ic) (Max): 300 mA
Supplier Device Package: TO-5
Qualification: MIL-PRF-19500/366
Grade: Military
Produkt ist nicht verfügbar
Mindestbestellmenge: 100 Stücke
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JANTX2N3501UB 125200-lds-0276-3-datasheet
JANTX2N3501UB
Hersteller: Microchip Technology
Description: TRANS NPN 150V 0.3A UB
Qualification: MIL-PRF-19500/366
Power - Max: 500 mW
Voltage - Collector Emitter Breakdown (Max): 150 V
Current - Collector (Ic) (Max): 300 mA
Grade: Military
Supplier Device Package: UB
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 150mA, 10V
Current - Collector Cutoff (Max): 10µA (ICBO)
Vce Saturation (Max) @ Ib, Ic: 400mV @ 15mA, 150mA
Operating Temperature: -65°C ~ 200°C (TJ)
Transistor Type: NPN
Mounting Type: Surface Mount
Package / Case: 3-SMD, No Lead
Packaging: Bulk
Produkt ist nicht verfügbar
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JANTX2N3700 LDS-0185_2N3700.pdf
JANTX2N3700
Hersteller: Microchip Technology
Description: TRANS NPN 80V 1A TO-18
Qualification: MIL-PRF-19500/391
Grade: Military
Power - Max: 500 mW
Voltage - Collector Emitter Breakdown (Max): 80 V
Current - Collector (Ic) (Max): 1 A
Part Status: Active
Supplier Device Package: TO-18 (TO-206AA)
DC Current Gain (hFE) (Min) @ Ic, Vce: 50 @ 500mA, 10V
Current - Collector Cutoff (Max): 10nA
Vce Saturation (Max) @ Ib, Ic: 500mV @ 50mA, 500mA
Operating Temperature: -65°C ~ 200°C (TJ)
Transistor Type: NPN
Mounting Type: Through Hole
Package / Case: TO-206AA, TO-18-3 Metal Can
Packaging: Bulk
auf Bestellung 213 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPreis
3+6.65 EUR
100+6.19 EUR
Mindestbestellmenge: 3 Stücke
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JANTX2N3700UB 2N3700UB-LDS-0185-3-MIL-PRF-19500-391.pdf
JANTX2N3700UB
Hersteller: Microchip Technology
Description: TRANS NPN 80V 1A UB
Qualification: MIL-PRF-19500/391
Grade: Military
Current - Collector Cutoff (Max): 10nA
Vce Saturation (Max) @ Ib, Ic: 500mV @ 50mA, 500mA
Operating Temperature: -65°C ~ 200°C (TJ)
Transistor Type: NPN
Mounting Type: Surface Mount
Package / Case: 3-SMD, No Lead
Packaging: Bulk
Power - Max: 500 mW
Voltage - Collector Emitter Breakdown (Max): 80 V
Current - Collector (Ic) (Max): 1 A
Part Status: Active
Supplier Device Package: UB
DC Current Gain (hFE) (Min) @ Ic, Vce: 50 @ 500mA, 10V
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JANTX2N3735 8978-lds-0173-datasheet
JANTX2N3735
Hersteller: Microchip Technology
Description: TRANS NPN 40V 1.5A TO39
Power - Max: 1 W
Voltage - Collector Emitter Breakdown (Max): 40 V
Current - Collector (Ic) (Max): 1.5 A
Part Status: Active
Supplier Device Package: TO-39 (TO-205AD)
DC Current Gain (hFE) (Min) @ Ic, Vce: 20 @ 1A, 1.5V
Current - Collector Cutoff (Max): 10µA
Vce Saturation (Max) @ Ib, Ic: 900mV @ 100mA, 1A
Operating Temperature: -65°C ~ 200°C (TJ)
Transistor Type: NPN
Mounting Type: Through Hole
Package / Case: TO-205AD, TO-39-3 Metal Can
Packaging: Bulk
Qualification: MIL-PRF-19500/395
Grade: Military
Produkt ist nicht verfügbar
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JANTX2N3735L 8978-lds-0173-datasheet
JANTX2N3735L
Hersteller: Microchip Technology
Description: TRANS NPN 40V 1.5A TO-5
Qualification: MIL-PRF-19500/395
Power - Max: 1 W
Voltage - Collector Emitter Breakdown (Max): 40 V
Current - Collector (Ic) (Max): 1.5 A
Grade: Military
Supplier Device Package: TO-5
DC Current Gain (hFE) (Min) @ Ic, Vce: 20 @ 1A, 1.5V
Current - Collector Cutoff (Max): 10µA
Vce Saturation (Max) @ Ib, Ic: 900mV @ 100mA, 1A
Operating Temperature: -65°C ~ 200°C (TJ)
Transistor Type: NPN
Mounting Type: Through Hole
Package / Case: TO-205AA, TO-5-3 Metal Can
Packaging: Bulk
Produkt ist nicht verfügbar
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JANTX2N3737UB 8978-lds-0173-datasheet
JANTX2N3737UB
Hersteller: Microchip Technology
Description: TRANS NPN 40V 1.5A UB
Qualification: MIL-PRF-19500/395
Power - Max: 500 mW
Voltage - Collector Emitter Breakdown (Max): 40 V
Current - Collector (Ic) (Max): 1.5 A
Grade: Military
Supplier Device Package: UB
DC Current Gain (hFE) (Min) @ Ic, Vce: 20 @ 1A, 1.5V
Current - Collector Cutoff (Max): 10µA (ICBO)
Vce Saturation (Max) @ Ib, Ic: 900mV @ 100mA, 1A
Operating Temperature: -65°C ~ 200°C (TJ)
Transistor Type: NPN
Mounting Type: Surface Mount
Package / Case: 4-SMD, No Lead
Packaging: Bulk
Produkt ist nicht verfügbar
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JANTX2N3810 2N3810-2N3811-MIL-PRF-19500-336.pdf
JANTX2N3810
Hersteller: Microchip Technology
Description: TRANS 2PNP 60V 50MA TO-78-6
Packaging: Bulk
Package / Case: TO-78-6 Metal Can
Mounting Type: Through Hole
Transistor Type: 2 PNP (Dual)
Operating Temperature: -65°C ~ 200°C (TJ)
Power - Max: 350mW
Current - Collector (Ic) (Max): 50mA
Voltage - Collector Emitter Breakdown (Max): 60V
Vce Saturation (Max) @ Ib, Ic: 250mV @ 100µA, 1mA
Current - Collector Cutoff (Max): 10µA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 150 @ 1mA, 5V
Supplier Device Package: TO-78-6
Grade: Military
Qualification: MIL-PRF-19500/336
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AnzahlPreis
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JANTX2N3810L 8931-lds-0118-datasheet
Hersteller: Microchip Technology
Description: TRANS 2PNP 60V 0.05A
Qualification: MIL-PRF-19500/336
Grade: Military
Supplier Device Package: TO-78-6
DC Current Gain (hFE) (Min) @ Ic, Vce: 150 @ 1mA, 5V
Current - Collector Cutoff (Max): 10µA (ICBO)
Vce Saturation (Max) @ Ib, Ic: 250mV @ 100µA, 1mA
Voltage - Collector Emitter Breakdown (Max): 60V
Current - Collector (Ic) (Max): 50mA
Power - Max: 350mW
Operating Temperature: -65°C ~ 200°C (TJ)
Transistor Type: 2 PNP (Dual)
Mounting Type: Through Hole
Package / Case: TO-78-6 Metal Can
Packaging: Bulk
Produkt ist nicht verfügbar
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JANTX2N4033 6070-2n4029-datasheet
JANTX2N4033
Hersteller: Microchip Technology
Description: TRANS PNP 80V 1A TO-39
Qualification: MIL-PRF-19500/512
Grade: Military
Power - Max: 800 mW
Voltage - Collector Emitter Breakdown (Max): 80 V
Current - Collector (Ic) (Max): 1 A
Part Status: Active
Supplier Device Package: TO-39
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 100mA, 5V
Current - Collector Cutoff (Max): 10µA (ICBO)
Vce Saturation (Max) @ Ib, Ic: 1V @ 100mA, 1A
Operating Temperature: -55°C ~ 200°C (TJ)
Transistor Type: PNP
Mounting Type: Through Hole
Package / Case: TO-205AD, TO-39-3 Metal Can
Packaging: Bulk
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AnzahlPreis
2+11.93 EUR
100+11.09 EUR
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JANTX2N5582 6091-2n5581-datasheet
JANTX2N5582
Hersteller: Microchip Technology
Description: TRANS NPN 50V 0.8A TO46-3
Qualification: MIL-PRF-19500/423
Grade: Military
Power - Max: 500 mW
Voltage - Collector Emitter Breakdown (Max): 50 V
Current - Collector (Ic) (Max): 800 mA
Supplier Device Package: TO-46-3
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 150mA, 10V
Current - Collector Cutoff (Max): 10µA (ICBO)
Vce Saturation (Max) @ Ib, Ic: 1V @ 50mA, 500mA
Operating Temperature: -55°C ~ 200°C (TJ)
Transistor Type: NPN
Mounting Type: Through Hole
Package / Case: TO-206AB, TO-46-3 Metal Can
Packaging: Bulk
Produkt ist nicht verfügbar
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JANTX2N918UB
Hersteller: Microchip Technology
Description: TRANS NPN 15V 0.05A UB
Packaging: Bulk
Package / Case: 4-SMD, No Lead
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: -65°C ~ 200°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 400mV @ 1mA, 10mA
Current - Collector Cutoff (Max): 1µA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 20 @ 3mA, 1V
Supplier Device Package: UB
Part Status: Active
Current - Collector (Ic) (Max): 50 mA
Voltage - Collector Emitter Breakdown (Max): 15 V
Power - Max: 200 mW
Grade: Military
Qualification: MIL-PRF-19500/301
Produkt ist nicht verfügbar
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JANTXV1N4249 123513-lds-0191-datasheet
JANTXV1N4249
Hersteller: Microchip Technology
Description: DIODE GEN PURP 1KV 1A AXIAL
Current - Reverse Leakage @ Vr: 1 µA @ 1000 V
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 3 A
Voltage - DC Reverse (Vr) (Max): 1000 V
Operating Temperature - Junction: -65°C ~ 175°C
Supplier Device Package: A, Axial
Current - Average Rectified (Io): 1A
Technology: Standard
Reverse Recovery Time (trr): 5 µs
Speed: Standard Recovery >500ns, > 200mA (Io)
Mounting Type: Through Hole
Package / Case: A, Axial
Packaging: Bulk
Produkt ist nicht verfügbar
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