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JANTXV1N4942 JANTXV1N4942 Microchip Technology 129281-lds-0295-datasheet Description: DIODE GEN PURP 200V 1A AXIAL
Qualification: MIL-PRF-19500/359
Current - Reverse Leakage @ Vr: 1 µA @ 200 V
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 1 A
Voltage - DC Reverse (Vr) (Max): 200 V
Grade: Military
Operating Temperature - Junction: -65°C ~ 175°C
Supplier Device Package: A, Axial
Current - Average Rectified (Io): 1A
Capacitance @ Vr, F: 45pF @ 12V, 1MHz
Technology: Standard
Reverse Recovery Time (trr): 150 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Through Hole
Package / Case: A, Axial
Packaging: Bulk
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JANTXV1N4944 JANTXV1N4944 Microchip Technology 129281-lds-0295-datasheet Description: DIODE GEN PURP 400V 1A AXIAL
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 1 A
Voltage - DC Reverse (Vr) (Max): 400 V
Part Status: Active
Operating Temperature - Junction: -65°C ~ 175°C
Supplier Device Package: A, Axial
Current - Average Rectified (Io): 1A
Capacitance @ Vr, F: 35pF @ 12V, 1MHz
Technology: Standard
Reverse Recovery Time (trr): 150 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Through Hole
Package / Case: A, Axial
Packaging: Bulk
Current - Reverse Leakage @ Vr: 1 µA @ 400 V
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JANTXV1N4960 JANTXV1N4960 Microchip Technology 10913-sa5-37-datasheet Description: DIODE ZENER 12V 5W AXIAL
Qualification: MIL-PRF-19500/356
Current - Reverse Leakage @ Vr: 10 µA @ 9.1 V
Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 1 A
Power - Max: 5 W
Grade: Military
Impedance (Max) (Zzt): 2.5 Ohms
Voltage - Zener (Nom) (Vz): 12 V
Operating Temperature: -65°C ~ 175°C
Mounting Type: Through Hole
Package / Case: E, Axial
Tolerance: ±5%
Packaging: Bulk
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JANTXV1N4960US JANTXV1N4960US Microchip Technology 11059-sd44a-datasheet Description: DIODE ZENER 12V 5W D5B
Qualification: MIL-PRF-19500/356
Current - Reverse Leakage @ Vr: 10 µA @ 9.1 V
Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 1 A
Power - Max: 5 W
Grade: Military
Supplier Device Package: D-5B
Impedance (Max) (Zzt): 2.5 Ohms
Voltage - Zener (Nom) (Vz): 12 V
Operating Temperature: -65°C ~ 175°C
Mounting Type: Surface Mount
Package / Case: SQ-MELF, E
Tolerance: ±5%
Packaging: Bulk
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JANTXV1N4978 JANTXV1N4978 Microchip Technology 1N4954-1N4996%2C15968-1N5969%2C1N6632-1N6637.pdf Description: DIODE ZENER 68V 5W AXIAL
Packaging: Bulk
Current - Reverse Leakage @ Vr: 2 µA @ 51.7 V
Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 1 A
Power - Max: 5 W
Part Status: Active
Impedance (Max) (Zzt): 50 Ohms
Voltage - Zener (Nom) (Vz): 68 V
Operating Temperature: -65°C ~ 175°C
Mounting Type: Through Hole
Package / Case: E, Axial
Tolerance: ±5%
Qualification: MIL-PRF-19500/356
Grade: Military
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JANTXV1N4978US JANTXV1N4978US Microchip Technology 1N4954US-96US%2C1N5968US-69US%2C1N6632US-1N6637US.pdf Description: DIODE ZENER 68V 5W D5B
Current - Reverse Leakage @ Vr: 2 µA @ 51.7 V
Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 1 A
Power - Max: 5 W
Part Status: Active
Supplier Device Package: D-5B
Impedance (Max) (Zzt): 50 Ohms
Voltage - Zener (Nom) (Vz): 68 V
Operating Temperature: -65°C ~ 175°C
Mounting Type: Surface Mount
Package / Case: SQ-MELF, E
Tolerance: ±5%
Packaging: Bulk
Qualification: MIL-PRF-19500/356
Grade: Military
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JANTXV1N4980 JANTXV1N4980 Microchip Technology 1N4954-1N4996%2C15968-1N5969%2C1N6632-1N6637.pdf Description: DIODE ZENER 82V 5W AXIAL
Qualification: MIL-PRF-19500/356
Grade: Military
Current - Reverse Leakage @ Vr: 2 µA @ 62.2 V
Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 1 A
Power - Max: 5 W
Part Status: Discontinued at Digi-Key
Impedance (Max) (Zzt): 80 Ohms
Voltage - Zener (Nom) (Vz): 82 V
Operating Temperature: -65°C ~ 175°C
Mounting Type: Through Hole
Package / Case: E, Axial
Tolerance: ±5%
Packaging: Bulk
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JANTXV1N4980US JANTXV1N4980US Microchip Technology 1N4954US-96US%2C1N5968US-69US%2C1N6632US-1N6637US.pdf Description: DIODE ZENER 82V 5W D5B
Qualification: MIL-PRF-19500/356
Grade: Military
Current - Reverse Leakage @ Vr: 2 µA @ 62.2 V
Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 1 A
Power - Max: 5 W
Part Status: Discontinued at Digi-Key
Supplier Device Package: D-5B
Impedance (Max) (Zzt): 80 Ohms
Voltage - Zener (Nom) (Vz): 82 V
Operating Temperature: -65°C ~ 175°C
Mounting Type: Surface Mount
Package / Case: SQ-MELF, E
Tolerance: ±5%
Packaging: Bulk
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JANTXV1N5416US JANTXV1N5416US Microchip Technology LDS-0231-1%2C+1N5415US+thru1N5420US%2C+MIL-PRF-19500-411.pdf Description: DIODE STANDARD 100V 3A D5B
Qualification: MIL-PRF-19500/411
Current - Reverse Leakage @ Vr: 1 µA @ 100 V
Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 9 A
Voltage - DC Reverse (Vr) (Max): 100 V
Grade: Military
Operating Temperature - Junction: -65°C ~ 175°C
Supplier Device Package: D-5B
Current - Average Rectified (Io): 3A
Technology: Standard
Reverse Recovery Time (trr): 150 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: SQ-MELF, E
Packaging: Bulk
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JANTXV1N5420 JANTXV1N5420 Microchip Technology 124360-lds-0231-datasheet Description: DIODE GEN PURP 600V 3A B AXIAL
Current - Reverse Leakage @ Vr: 1 µA @ 600 V
Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 9 A
Voltage - DC Reverse (Vr) (Max): 600 V
Operating Temperature - Junction: -65°C ~ 175°C
Supplier Device Package: B, Axial
Current - Average Rectified (Io): 3A
Technology: Standard
Reverse Recovery Time (trr): 250 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Through Hole
Package / Case: B, Axial
Packaging: Bulk
Qualification: MIL-PRF-19500/411
Grade: Military
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JANTXV1N5420US JANTXV1N5420US Microchip Technology 11075-lds-0231-1-datasheet Description: DIODE GEN PURP 600V 3A D-5B
Supplier Device Package: D-5B
Current - Average Rectified (Io): 3A
Technology: Standard
Reverse Recovery Time (trr): 400 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: SQ-MELF, E
Packaging: Bulk
Qualification: MIL-PRF-19500/411
Grade: Military
Current - Reverse Leakage @ Vr: 1 µA @ 600 V
Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 9 A
Voltage - DC Reverse (Vr) (Max): 600 V
Operating Temperature - Junction: -65°C ~ 175°C
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JANTXV1N5553 JANTXV1N5553 Microchip Technology LDS-0230%2C+1N5550+thru+1N5554%2C+MIL-PRF-19500-420.pdf Description: DIODE STANDARD 800V 5A B AXIAL
Packaging: Bulk
Package / Case: B, Axial
Mounting Type: Through Hole
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): 2 µs
Technology: Standard
Current - Average Rectified (Io): 5A
Supplier Device Package: B, Axial
Operating Temperature - Junction: -65°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 800 V
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 9 A
Current - Reverse Leakage @ Vr: 1 µA @ 800 V
Grade: Military
Qualification: MIL-PRF-19500/420
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JANTXV1N5554 JANTXV1N5554 Microchip Technology 11519-lds-0230-datasheet Description: DIODE STANDARD 1000V 5A B AXIAL
Qualification: MIL-PRF-19500/420
Grade: Military
Current - Reverse Leakage @ Vr: 1 µA @ 1000 V
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 9 A
Voltage - DC Reverse (Vr) (Max): 1000 V
Operating Temperature - Junction: -65°C ~ 175°C
Supplier Device Package: B, Axial
Current - Average Rectified (Io): 5A
Technology: Standard
Reverse Recovery Time (trr): 2 µs
Speed: Standard Recovery >500ns, > 200mA (Io)
Mounting Type: Through Hole
Package / Case: B, Axial
Packaging: Bulk
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JANTXV1N5615 JANTXV1N5615 Microchip Technology 10968-sa7-47-datasheet Description: DIODE GEN PURP 200V 1A AXIAL
Current - Reverse Leakage @ Vr: 500 nA @ 200 V
Voltage - Forward (Vf) (Max) @ If: 1.6 V @ 3 A
Voltage - DC Reverse (Vr) (Max): 200 V
Part Status: Active
Operating Temperature - Junction: -65°C ~ 175°C
Supplier Device Package: A, Axial
Current - Average Rectified (Io): 1A
Capacitance @ Vr, F: 45pF @ 12V, 1MHz
Technology: Standard
Reverse Recovery Time (trr): 150 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Through Hole
Qualification: MIL-PRF-19500/429
Grade: Military
Package / Case: A, Axial
Packaging: Bulk
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JANTXV1N5619 JANTXV1N5619 Microchip Technology 10968-sa7-47-datasheet Description: DIODE STANDARD 600V 1A AXIAL
Mounting Type: Through Hole
Package / Case: A, Axial
Packaging: Bulk
Qualification: MIL-PRF-19500/429
Current - Reverse Leakage @ Vr: 500 nA @ 600 V
Voltage - Forward (Vf) (Max) @ If: 1.6 V @ 3 A
Voltage - DC Reverse (Vr) (Max): 600 V
Grade: Military
Operating Temperature - Junction: -65°C ~ 175°C
Supplier Device Package: A, Axial
Current - Average Rectified (Io): 1A
Capacitance @ Vr, F: 25pF @ 12V, 1MHz
Technology: Standard
Reverse Recovery Time (trr): 250 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
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JANTXV1N5804 JANTXV1N5804 Microchip Technology 132686-lds-0211.pdf Description: DIODE STANDARD 100V 1A AXIAL
Packaging: Bulk
Package / Case: A, Axial
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 25 ns
Technology: Standard
Capacitance @ Vr, F: 25pF @ 10V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: A, Axial
Operating Temperature - Junction: -65°C ~ 175°C
Grade: Military
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 875 mV @ 1 A
Current - Reverse Leakage @ Vr: 1 µA @ 100 V
Qualification: MIL-PRF-19500/477
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JANTXV1N5804US JANTXV1N5804US Microchip Technology LDS-0211+%282%29%2C+1N5802-1N5804-1N5806%2C+MIL-PRF-19500-477.pdf Description: DIODE STANDARD 100V 1A D5A
Packaging: Bulk
Package / Case: SQ-MELF, A
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 25 ns
Technology: Standard
Capacitance @ Vr, F: 25pF @ 10V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: D-5A
Operating Temperature - Junction: -65°C ~ 175°C
Grade: Military
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 875 mV @ 1 A
Current - Reverse Leakage @ Vr: 1 µA @ 100 V
Qualification: MIL-PRF-19500/477
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JANTXV1N5811US JANTXV1N5811US Microchip Technology LDS-0168-1%2C+1N5807US-1N5809US-1N5811US%28URS%29%2C+MIL-PRF-19500-477.pdf Description: DIODE STANDARD 150V 3A B SQMELF
Packaging: Bulk
Package / Case: SQ-MELF, B
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 30 ns
Technology: Standard
Capacitance @ Vr, F: 60pF @ 10V, 1MHz
Current - Average Rectified (Io): 3A
Supplier Device Package: B, SQ-MELF
Operating Temperature - Junction: -65°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 150 V
Voltage - Forward (Vf) (Max) @ If: 875 mV @ 4 A
Current - Reverse Leakage @ Vr: 5 µA @ 150 V
Grade: Military
Qualification: MIL-PRF-19500/477
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JANTXV1N6118A JANTXV1N6118A Microchip Technology lds-0277.pdf Description: TVS DIODE 25.1VWM 45.7V AXIAL
Packaging: Bulk
Package / Case: B, Axial
Mounting Type: Through Hole
Type: Zener
Operating Temperature: -55°C ~ 175°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 10.9A
Voltage - Reverse Standoff (Typ): 25.1V
Supplier Device Package: B, Axial
Bidirectional Channels: 1
Voltage - Breakdown (Min): 31.4V
Voltage - Clamping (Max) @ Ipp: 45.7V
Power - Peak Pulse: 500W
Power Line Protection: No
Grade: Military
Part Status: Active
Qualification: MIL-PRF-19500/516
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JANTXV1N6118AUS JANTXV1N6118AUS Microchip Technology lds-0277-1.pdf Description: TVS DIODE 25.1VWM 45.7VC SQMELF
Packaging: Bulk
Package / Case: SQ-MELF, B
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 175°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 10.9A
Voltage - Reverse Standoff (Typ): 25.1V
Supplier Device Package: B, SQ-MELF
Bidirectional Channels: 1
Voltage - Breakdown (Min): 31.4V
Voltage - Clamping (Max) @ Ipp: 45.7V
Power - Peak Pulse: 500W
Power Line Protection: No
Grade: Military
Part Status: Active
Qualification: MIL-PRF-19500/516
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JANTXV1N6126A JANTXV1N6126A Microchip Technology lds-0277.pdf Description: TVS DIODE 51.7VWM 97.1V AXIAL
Packaging: Bulk
Package / Case: B, Axial
Mounting Type: Through Hole
Type: Zener
Operating Temperature: -55°C ~ 175°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 5.1A
Voltage - Reverse Standoff (Typ): 51.7V
Supplier Device Package: B, Axial
Bidirectional Channels: 1
Voltage - Breakdown (Min): 64.6V
Voltage - Clamping (Max) @ Ipp: 97.1V
Power - Peak Pulse: 500W
Power Line Protection: No
Grade: Military
Part Status: Active
Qualification: MIL-PRF-19500/516
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JANTXV1N6126AUS JANTXV1N6126AUS Microchip Technology lds-0277-1.pdf Description: TVS DIODE 51.7VWM 97.1VC SQMELF
Qualification: MIL-PRF-19500/516
Grade: Military
Power Line Protection: No
Power - Peak Pulse: 500W
Voltage - Clamping (Max) @ Ipp: 97.1V
Voltage - Breakdown (Min): 64.6V
Bidirectional Channels: 1
Supplier Device Package: B, SQ-MELF
Voltage - Reverse Standoff (Typ): 51.7V
Current - Peak Pulse (10/1000µs): 5.1A
Applications: General Purpose
Operating Temperature: -55°C ~ 175°C (TJ)
Type: Zener
Mounting Type: Surface Mount
Package / Case: SQ-MELF, B
Packaging: Bulk
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JANTXV1N6156A JANTXV1N6156A Microchip Technology 127853-1n6138-1n6173a-tvs-diode-series-datasheet Description: TVS DIODE 29.7VWM 53.6VC C AXIAL
Part Status: Active
Power Line Protection: No
Power - Peak Pulse: 1500W (1.5kW)
Voltage - Clamping (Max) @ Ipp: 53.6V
Voltage - Breakdown (Min): 37.1V
Bidirectional Channels: 1
Supplier Device Package: C, Axial
Voltage - Reverse Standoff (Typ): 29.7V
Current - Peak Pulse (10/1000µs): 28A
Applications: General Purpose
Operating Temperature: -55°C ~ 175°C (TJ)
Type: Zener
Mounting Type: Through Hole
Package / Case: G, Axial
Packaging: Bulk
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JANTXV1N6461US JANTXV1N6461US Microchip Technology 11066-sd50a-datasheet Description: TVS DIODE 5VWM 9VC B SQ-MELF
Qualification: MIL-PRF-19500/551
Grade: Military
Power Line Protection: No
Power - Peak Pulse: 500W
Voltage - Clamping (Max) @ Ipp: 9V
Voltage - Breakdown (Min): 5.6V
Unidirectional Channels: 1
Supplier Device Package: B, SQ-MELF
Voltage - Reverse Standoff (Typ): 5V
Current - Peak Pulse (10/1000µs): 315A (8/20µs)
Applications: General Purpose
Operating Temperature: -55°C ~ 175°C (TJ)
Type: Zener
Mounting Type: Surface Mount
Package / Case: SQ-MELF, B
Packaging: Bulk
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JANTXV1N6628 JANTXV1N6628 Microchip Technology 10973-sa7-57-datasheet Description: DIODE GEN PURP 660V 1.75A AXIAL
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JANTXV1N829-1 JANTXV1N829-1 Microchip Technology 125462-lds-0220-datasheet Description: DIODE ZENER 6.2V 500MW DO35
Current - Reverse Leakage @ Vr: 2 µA @ 3 V
Power - Max: 500 mW
Part Status: Active
Supplier Device Package: DO-204AH (DO-35)
Impedance (Max) (Zzt): 15 Ohms
Voltage - Zener (Nom) (Vz): 6.2 V
Mounting Type: Through Hole
Package / Case: DO-204AH, DO-35, Axial
Tolerance: ±5%
Packaging: Bulk
Qualification: MIL-PRF-19500/159
Grade: Military
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JANTXV1N829UR-1 Microchip Technology 11037-lds-0220-1-datasheet Description: DIODE ZENER 6.2V 500MW DO213AA
Current - Reverse Leakage @ Vr: 2 µA @ 3 V
Power - Max: 500 mW
Part Status: Active
Supplier Device Package: DO-213AA
Impedance (Max) (Zzt): 15 Ohms
Voltage - Zener (Nom) (Vz): 6.2 V
Mounting Type: Surface Mount
Package / Case: DO-213AA
Tolerance: ±5%
Packaging: Bulk
Qualification: MIL-PRF-19500/159
Grade: Military
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JANTXV2N2219 JANTXV2N2219 Microchip Technology 2N2218-2N2219AL-LDS0091-MIL-PRF-19500-251.pdf Description: TRANS NPN 30V 0.8A TO-205AD
Packaging: Bulk
Package / Case: TO-205AD, TO-39-3 Metal Can
Mounting Type: Through Hole
Transistor Type: NPN
Operating Temperature: -55°C ~ 200°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 1.6V @ 50mA, 500mA
Current - Collector Cutoff (Max): 10nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 150mA, 10V
Supplier Device Package: TO-205AD
Part Status: Active
Current - Collector (Ic) (Max): 800 mA
Voltage - Collector Emitter Breakdown (Max): 30 V
Power - Max: 800 mW
Grade: Military
Qualification: MIL-PRF-19500/251
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JANTXV2N2219A JANTXV2N2219A Microchip Technology 2N2218-2N2219AL-LDS0091-MIL-PRF-19500-251.pdf Description: TRANS NPN 50V 0.8A TO-205AD
Packaging: Bulk
Package / Case: TO-205AD, TO-39-3 Metal Can
Mounting Type: Through Hole
Transistor Type: NPN
Operating Temperature: -55°C ~ 200°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 1V @ 50mA, 500mA
Current - Collector Cutoff (Max): 10nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 150mA, 10V
Supplier Device Package: TO-205AD
Grade: Military
Part Status: Active
Current - Collector (Ic) (Max): 800 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 800 mW
Qualification: MIL-PRF-19500/251
auf Bestellung 156 Stücke:
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100+10.97 EUR
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Jantxv2N2219AL Jantxv2N2219AL Microchip Technology 2N2218-2N2219AL-LDS0091-MIL-PRF-19500-251.pdf Description: TRANS NPN 50V 0.8A TO-5
Packaging: Bulk
Package / Case: TO-205AA, TO-5-3 Metal Can
Mounting Type: Through Hole
Transistor Type: NPN
Operating Temperature: -55°C ~ 200°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 1V @ 50mA, 500mA
Current - Collector Cutoff (Max): 10nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 150mA, 10V
Supplier Device Package: TO-5
Part Status: Active
Current - Collector (Ic) (Max): 800 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 800 mW
Grade: Military
Qualification: MIL-PRF-19500/251
Produkt ist nicht verfügbar
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JANTXV2N2222A JANTXV2N2222A Microchip Technology MIL-PRF-19500_255AA_wAmendment1_5-19-16.pdf Description: TRANS NPN 50V 0.8A TO-18
Packaging: Bulk
Package / Case: TO-206AA, TO-18-3 Metal Can
Mounting Type: Through Hole
Transistor Type: NPN
Operating Temperature: -65°C ~ 200°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 1V @ 50mA, 500mA
Current - Collector Cutoff (Max): 50nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 150mA, 10V
Supplier Device Package: TO-18 (TO-206AA)
Part Status: Active
Current - Collector (Ic) (Max): 800 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 500 mW
Grade: Military
Qualification: MIL-PRF-19500/255
auf Bestellung 602 Stücke:
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4+5.7 EUR
100+5.29 EUR
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Jantxv2N2222AL Jantxv2N2222AL Microchip Technology MIL-PRF-19500_255AA_wAmendment1_5-19-16.pdf Description: TRANS NPN 50V 0.8A TO-18
Packaging: Bulk
Package / Case: TO-206AA, TO-18-3 Metal Can
Mounting Type: Through Hole
Transistor Type: NPN
Operating Temperature: -65°C ~ 200°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 1V @ 50mA, 500mA
Current - Collector Cutoff (Max): 50nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 150mA, 10V
Supplier Device Package: TO-18 (TO-206AA)
Part Status: Active
Current - Collector (Ic) (Max): 800 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 500 mW
Grade: Military
Qualification: MIL-PRF-19500/255
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Jantxv2N2222AUA Jantxv2N2222AUA Microchip Technology MIL-PRF-19500_255AA_wAmendment1_5-19-16.pdf Description: TRANS NPN 50V 0.8A 4-SMD
Packaging: Bulk
Package / Case: 4-SMD, No Lead
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: -65°C ~ 200°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 1V @ 50mA, 500mA
Current - Collector Cutoff (Max): 50nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 150mA, 10V
Supplier Device Package: 4-SMD
Part Status: Active
Current - Collector (Ic) (Max): 800 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 650 mW
Grade: Military
Qualification: MIL-PRF-19500/255
Produkt ist nicht verfügbar
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JANTXV2N2222AUB JANTXV2N2222AUB Microchip Technology MIL-PRF-19500_255AA_wAmendment1_5-19-16.pdf Description: TRANS NPN 50V 0.8A UB
Packaging: Bulk
Package / Case: 3-SMD, No Lead
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: -65°C ~ 200°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 1V @ 50mA, 500mA
Current - Collector Cutoff (Max): 50nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 150mA, 10V
Supplier Device Package: UB
Part Status: Active
Current - Collector (Ic) (Max): 800 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 500 mW
Grade: Military
Qualification: MIL-PRF-19500/255
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
JANTXV2N2369AUB JANTXV2N2369AUB Microchip Technology 2N2369A-2N4449-MIL-PRF-19500-317.pdf Description: TRANS NPN 20V UB
Packaging: Bulk
Package / Case: 4-SMD, No Lead
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: -65°C ~ 200°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 450mV @ 10mA, 100mA
Current - Collector Cutoff (Max): 400nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 20 @ 100mA, 1V
Supplier Device Package: UB
Part Status: Active
Voltage - Collector Emitter Breakdown (Max): 20 V
Power - Max: 400 mW
Grade: Military
Qualification: MIL-PRF-19500/317
Produkt ist nicht verfügbar
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Jantxv2N2484 Microchip Technology Description: TRANS NPN 60V 0.05A TO-18
Packaging: Bulk
Package / Case: TO-206AA, TO-18-3 Metal Can
Mounting Type: Through Hole
Transistor Type: NPN
Operating Temperature: -65°C ~ 200°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 300mV @ 100µA, 1mA
Current - Collector Cutoff (Max): 2nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 225 @ 10mA, 5V
Supplier Device Package: TO-18
Part Status: Discontinued at Digi-Key
Current - Collector (Ic) (Max): 50 mA
Voltage - Collector Emitter Breakdown (Max): 60 V
Power - Max: 360 mW
Grade: Military
Qualification: MIL-PRF-19500/376
Produkt ist nicht verfügbar
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Jantxv2N2484UB Jantxv2N2484UB Microchip Technology 2N2484+MIL-PRF-19500_376.pdf Description: TRANS NPN 60V 0.05A UB
Packaging: Bulk
Package / Case: 3-SMD, No Lead
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: -65°C ~ 200°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 300mV @ 100µA, 1mA
Current - Collector Cutoff (Max): 2nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 225 @ 10mA, 5V
Supplier Device Package: UB
Current - Collector (Ic) (Max): 50 mA
Voltage - Collector Emitter Breakdown (Max): 60 V
Power - Max: 360 mW
Grade: Military
Qualification: MIL-PRF-19500/376
Produkt ist nicht verfügbar
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JANTXV2N2905A JANTXV2N2905A Microchip Technology 2N2904-2N2905-MIL-PRF-19500-290.pdf Description: TRANS PNP 60V 0.6A TO-39
Packaging: Bulk
Package / Case: TO-205AD, TO-39-3 Metal Can
Mounting Type: Through Hole
Transistor Type: PNP
Operating Temperature: -65°C ~ 200°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 1.6V @ 50mA, 500mA
Current - Collector Cutoff (Max): 1µA
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 150mA, 10V
Supplier Device Package: TO-39
Part Status: Active
Current - Collector (Ic) (Max): 600 mA
Voltage - Collector Emitter Breakdown (Max): 60 V
Power - Max: 800 mW
Grade: Military
Qualification: MIL-PRF-19500/290
Produkt ist nicht verfügbar
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Jantxv2N2905AL Jantxv2N2905AL Microchip Technology LDS-0186_2N2904-05%28AL%29.pdf Description: TRANS PNP 60V 0.6A TO-5
Packaging: Bulk
Package / Case: TO-205AA, TO-5-3 Metal Can
Mounting Type: Through Hole
Transistor Type: PNP
Operating Temperature: -65°C ~ 200°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 1.6V @ 50mA, 500mA
Current - Collector Cutoff (Max): 1µA
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 150mA, 10V
Supplier Device Package: TO-5
Part Status: Discontinued at Digi-Key
Current - Collector (Ic) (Max): 600 mA
Voltage - Collector Emitter Breakdown (Max): 60 V
Power - Max: 800 mW
Grade: Military
Qualification: MIL-PRF-19500/290
Produkt ist nicht verfügbar
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Jantxv2N2906A Jantxv2N2906A Microchip Technology 8896-lds-0059-datasheet Description: TRANS PNP 60V 0.6A TO18
Qualification: MIL-PRF-19500/291
Grade: Military
Power - Max: 500 mW
Voltage - Collector Emitter Breakdown (Max): 60 V
Current - Collector (Ic) (Max): 600 mA
Part Status: Active
Supplier Device Package: TO-18
DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 150mA, 10V
Operating Temperature: -65°C ~ 200°C (TJ)
Transistor Type: PNP
Mounting Type: Through Hole
Package / Case: TO-206AA, TO-18-3 Metal Can
Packaging: Bulk
Current - Collector Cutoff (Max): 50nA
Vce Saturation (Max) @ Ib, Ic: 1.6V @ 50mA, 500mA
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JANTXV2N2906AUB JANTXV2N2906AUB Microchip Technology 8896-lds-0059-datasheet Description: TRANS PNP 60V 0.6A UB
Power - Max: 500 mW
Voltage - Collector Emitter Breakdown (Max): 60 V
Current - Collector (Ic) (Max): 600 mA
Part Status: Discontinued at Digi-Key
Supplier Device Package: UB
DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 150mA, 10V
Current - Collector Cutoff (Max): 50nA
Vce Saturation (Max) @ Ib, Ic: 1.6V @ 50mA, 500mA
Operating Temperature: -65°C ~ 200°C (TJ)
Transistor Type: PNP
Mounting Type: Surface Mount
Package / Case: 3-SMD, No Lead
Packaging: Bulk
Qualification: MIL-PRF-19500/291
Grade: Military
Produkt ist nicht verfügbar
 Mindestbestellmenge: 100 Stücke
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JANTXV2N2907AL JANTXV2N2907AL Microchip Technology MIL-PRF-19500_291Y_wAmendment1_7-10-19.pdf Description: TRANS PNP 60V 0.6A TO-18
Packaging: Bulk
Package / Case: TO-206AA, TO-18-3 Metal Can
Mounting Type: Through Hole
Transistor Type: PNP
Operating Temperature: -65°C ~ 200°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 1.6V @ 50mA, 500mA
Current - Collector Cutoff (Max): 50nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 150mA, 10V
Supplier Device Package: TO-18
Part Status: Active
Current - Collector (Ic) (Max): 600 mA
Voltage - Collector Emitter Breakdown (Max): 60 V
Power - Max: 500 mW
Grade: Military
Qualification: MIL-PRF-19500/291
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Jantxv2N2907AUA Microchip Technology 8896-lds-0059-datasheet Description: TRANS PNP 60V 0.6A UA
Qualification: MIL-PRF-19500/291
Grade: Military
Power - Max: 500 mW
Part Status: Active
Supplier Device Package: UA
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 150mA, 10V
Current - Collector Cutoff (Max): 50nA
Vce Saturation (Max) @ Ib, Ic: 1.6V @ 50mA, 500mA
Operating Temperature: -65°C ~ 200°C (TJ)
Transistor Type: PNP
Mounting Type: Surface Mount
Package / Case: 4-SMD, No Lead
Packaging: Bulk
Voltage - Collector Emitter Breakdown (Max): 60 V
Current - Collector (Ic) (Max): 600 mA
Produkt ist nicht verfügbar
 Mindestbestellmenge: 100 Stücke
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JANTXV2N2907AUB JANTXV2N2907AUB Microchip Technology MIL-PRF-19500_291Y_wAmendment1_7-10-19.pdf Description: TRANS PNP 60V 0.6A UB
Packaging: Bulk
Package / Case: 4-SMD, No Lead
Mounting Type: Surface Mount
Transistor Type: PNP
Operating Temperature: -65°C ~ 200°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 1.6V @ 50mA, 500mA
Current - Collector Cutoff (Max): 50nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 150mA, 10V
Supplier Device Package: UB
Part Status: Active
Current - Collector (Ic) (Max): 600 mA
Voltage - Collector Emitter Breakdown (Max): 60 V
Power - Max: 500 mW
Grade: Military
Qualification: MIL-PRF-19500/291
auf Bestellung 219 Stücke:
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2+11.49 EUR
100+10.66 EUR
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Jantxv2N2946A Jantxv2N2946A Microchip Technology 124373-lds-0236-datasheet Description: TRANS PNP 35V 0.1A TO46
Power - Max: 400 mW
Voltage - Collector Emitter Breakdown (Max): 35 V
Current - Collector (Ic) (Max): 100 mA
Part Status: Active
Supplier Device Package: TO-46 (TO-206AB)
DC Current Gain (hFE) (Min) @ Ic, Vce: 50 @ 1mA, 500mV
Current - Collector Cutoff (Max): 10µA (ICBO)
Operating Temperature: -65°C ~ 200°C (TJ)
Transistor Type: PNP
Mounting Type: Through Hole
Package / Case: TO-206AB, TO-46-3 Metal Can
Packaging: Bulk
Qualification: MIL-PRF-19500/382
Grade: Military
Produkt ist nicht verfügbar
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Jantxv2N3019 Jantxv2N3019 Microchip Technology 122693-lds-0185-datasheet Description: TRANS NPN 80V 1A TO-5
Qualification: MIL-PRF-19500/391
Grade: Military
Power - Max: 800 mW
Voltage - Collector Emitter Breakdown (Max): 80 V
Current - Collector (Ic) (Max): 1 A
Part Status: Active
Supplier Device Package: TO-5
DC Current Gain (hFE) (Min) @ Ic, Vce: 50 @ 500mA, 10V
Current - Collector Cutoff (Max): 10µA (ICBO)
Vce Saturation (Max) @ Ib, Ic: 500mV @ 50mA, 500mA
Operating Temperature: -65°C ~ 200°C (TJ)
Transistor Type: NPN
Mounting Type: Through Hole
Package / Case: TO-205AA, TO-5-3 Metal Can
Packaging: Bulk
Produkt ist nicht verfügbar
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JANTXV2N3019S JANTXV2N3019S Microchip Technology 125195-lds-0185-4-datasheet Description: TRANS NPN 80V 1A TO-39
Qualification: MIL-PRF-19500/391
Grade: Military
Power - Max: 800 mW
Voltage - Collector Emitter Breakdown (Max): 80 V
Current - Collector (Ic) (Max): 1 A
Part Status: Active
Supplier Device Package: TO-39
DC Current Gain (hFE) (Min) @ Ic, Vce: 50 @ 500mA, 10V
Current - Collector Cutoff (Max): 10µA (ICBO)
Vce Saturation (Max) @ Ib, Ic: 500mV @ 50mA, 500mA
Operating Temperature: -65°C ~ 200°C (TJ)
Transistor Type: NPN
Mounting Type: Through Hole
Package / Case: TO-205AD, TO-39-3 Metal Can
Packaging: Bulk
Produkt ist nicht verfügbar
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JANTXV2N3439 JANTXV2N3439 Microchip Technology 8830-lds-0022-datasheet Description: TRANS NPN 350V 1A TO39
Transistor Type: NPN
Mounting Type: Through Hole
Package / Case: TO-205AD, TO-39-3 Metal Can
Packaging: Bulk
Qualification: MIL-PRF-19500/368
Grade: Military
Power - Max: 800 mW
Voltage - Collector Emitter Breakdown (Max): 350 V
Current - Collector (Ic) (Max): 1 A
Part Status: Active
Supplier Device Package: TO-39
DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 20mA, 10V
Current - Collector Cutoff (Max): 2µA
Vce Saturation (Max) @ Ib, Ic: 500mV @ 4mA, 50mA
Operating Temperature: -65°C ~ 200°C (TJ)
Produkt ist nicht verfügbar
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JANTXV2N3439L JANTXV2N3439L Microchip Technology 124290-lds-0022-1-datasheet Description: TRANS NPN 350V 1A TO5
Power - Max: 800 mW
Voltage - Collector Emitter Breakdown (Max): 350 V
Current - Collector (Ic) (Max): 1 A
Part Status: Active
Supplier Device Package: TO-5
DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 20mA, 10V
Qualification: MIL-PRF-19500/368
Grade: Military
Current - Collector Cutoff (Max): 2µA
Vce Saturation (Max) @ Ib, Ic: 500mV @ 4mA, 50mA
Operating Temperature: -65°C ~ 200°C (TJ)
Transistor Type: NPN
Mounting Type: Through Hole
Package / Case: TO-205AA, TO-5-3 Metal Can
Packaging: Bulk
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JANTXV2N3440 JANTXV2N3440 Microchip Technology LDS-0022_2N3439-40.pdf Description: TRANS NPN 250V 1A TO-39
Power - Max: 800 mW
Voltage - Collector Emitter Breakdown (Max): 250 V
Current - Collector (Ic) (Max): 1 A
Part Status: Active
Supplier Device Package: TO-39
DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 20mA, 10V
Current - Collector Cutoff (Max): 2µA
Vce Saturation (Max) @ Ib, Ic: 500mV @ 4mA, 50mA
Operating Temperature: -65°C ~ 200°C (TJ)
Transistor Type: NPN
Mounting Type: Through Hole
Package / Case: TO-205AD, TO-39-3 Metal Can
Packaging: Bulk
Qualification: MIL-PRF-19500/368
Grade: Military
Produkt ist nicht verfügbar
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JANTXV2N3440L JANTXV2N3440L Microchip Technology 124290-lds-0022-1-datasheet Description: TRANS NPN 250V 1A TO5
Power - Max: 800 mW
Voltage - Collector Emitter Breakdown (Max): 250 V
Current - Collector (Ic) (Max): 1 A
Part Status: Active
Supplier Device Package: TO-5
DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 20mA, 10V
Current - Collector Cutoff (Max): 2µA
Vce Saturation (Max) @ Ib, Ic: 500mV @ 4mA, 50mA
Operating Temperature: -65°C ~ 200°C (TJ)
Transistor Type: NPN
Mounting Type: Through Hole
Package / Case: TO-205AA, TO-5-3 Metal Can
Packaging: Bulk
Qualification: MIL-PRF-19500/368
Grade: Military
Produkt ist nicht verfügbar
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JANTXV2N3501 JANTXV2N3501 Microchip Technology 125197-lds-0276-datasheet Description: TRANS NPN 150V 0.3A TO39
Qualification: MIL-PRF-19500/366
Power - Max: 1 W
Voltage - Collector Emitter Breakdown (Max): 150 V
Current - Collector (Ic) (Max): 300 mA
Grade: Military
Supplier Device Package: TO-39 (TO-205AD)
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 150mA, 10V
Current - Collector Cutoff (Max): 10µA (ICBO)
Vce Saturation (Max) @ Ib, Ic: 400mV @ 15mA, 150mA
Operating Temperature: -65°C ~ 200°C (TJ)
Transistor Type: NPN
Mounting Type: Through Hole
Package / Case: TO-205AD, TO-39-3 Metal Can
Packaging: Bulk
Produkt ist nicht verfügbar
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JANTXV2N3501L JANTXV2N3501L Microchip Technology 125198-lds-0276-1-datasheet Description: TRANS NPN 150V 0.3A TO5
Qualification: MIL-PRF-19500/366
Power - Max: 1 W
Voltage - Collector Emitter Breakdown (Max): 150 V
Current - Collector (Ic) (Max): 300 mA
Grade: Military
Supplier Device Package: TO-5
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 150mA, 10V
Current - Collector Cutoff (Max): 10µA (ICBO)
Vce Saturation (Max) @ Ib, Ic: 400mV @ 15mA, 150mA
Operating Temperature: -65°C ~ 200°C (TJ)
Transistor Type: NPN
Mounting Type: Through Hole
Package / Case: TO-205AA, TO-5-3 Metal Can
Packaging: Bulk
Produkt ist nicht verfügbar
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JANTXV2N3501UB JANTXV2N3501UB Microchip Technology 125200-lds-0276-3-datasheet Description: TRANS NPN 150V 0.3A UB
Qualification: MIL-PRF-19500/366
Grade: Military
Power - Max: 500 mW
Voltage - Collector Emitter Breakdown (Max): 150 V
Current - Collector (Ic) (Max): 300 mA
Part Status: Active
Supplier Device Package: UB
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 150mA, 10V
Current - Collector Cutoff (Max): 10µA (ICBO)
Vce Saturation (Max) @ Ib, Ic: 400mV @ 15mA, 150mA
Operating Temperature: -65°C ~ 200°C (TJ)
Transistor Type: NPN
Mounting Type: Surface Mount
Package / Case: 3-SMD, No Lead
Packaging: Bulk
Produkt ist nicht verfügbar
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JANTXV2N3700 JANTXV2N3700 Microchip Technology LDS-0185_2N3700.pdf Description: TRANS NPN 80V 1A TO-18
Qualification: MIL-PRF-19500/391
Grade: Military
Power - Max: 500 mW
Voltage - Collector Emitter Breakdown (Max): 80 V
Current - Collector (Ic) (Max): 1 A
Supplier Device Package: TO-18 (TO-206AA)
DC Current Gain (hFE) (Min) @ Ic, Vce: 50 @ 500mA, 10V
Current - Collector Cutoff (Max): 10nA
Vce Saturation (Max) @ Ib, Ic: 500mV @ 50mA, 500mA
Operating Temperature: -65°C ~ 200°C (TJ)
Transistor Type: NPN
Mounting Type: Through Hole
Package / Case: TO-206AA, TO-18-3 Metal Can
Packaging: Bulk
Produkt ist nicht verfügbar
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JANTXV2N3700UB JANTXV2N3700UB Microchip Technology 2N3700UB-LDS-0185-3-MIL-PRF-19500-391.pdf Description: TRANS NPN 80V 1A UB
Qualification: MIL-PRF-19500/391
Grade: Military
Power - Max: 500 mW
Voltage - Collector Emitter Breakdown (Max): 80 V
Current - Collector (Ic) (Max): 1 A
Supplier Device Package: UB
DC Current Gain (hFE) (Min) @ Ic, Vce: 50 @ 500mA, 10V
Current - Collector Cutoff (Max): 10nA
Vce Saturation (Max) @ Ib, Ic: 500mV @ 50mA, 500mA
Operating Temperature: -65°C ~ 200°C (TJ)
Transistor Type: NPN
Mounting Type: Surface Mount
Package / Case: 3-SMD, No Lead
Packaging: Bulk
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JANTXV2N3735L JANTXV2N3735L Microchip Technology 8978-lds-0173-datasheet Description: TRANS NPN 40V 1.5A TO5
Qualification: MIL-PRF-19500/395
Power - Max: 1 W
Voltage - Collector Emitter Breakdown (Max): 40 V
Current - Collector (Ic) (Max): 1.5 A
Grade: Military
Supplier Device Package: TO-5
DC Current Gain (hFE) (Min) @ Ic, Vce: 20 @ 1A, 1.5V
Current - Collector Cutoff (Max): 10µA (ICBO)
Vce Saturation (Max) @ Ib, Ic: 900mV @ 100mA, 1A
Operating Temperature: -65°C ~ 200°C (TJ)
Transistor Type: NPN
Mounting Type: Through Hole
Package / Case: TO-205AA, TO-5-3 Metal Can
Packaging: Bulk
Produkt ist nicht verfügbar
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JANTXV2N3810 JANTXV2N3810 Microchip Technology 8931-lds-0118-datasheet Description: TRANS 2PNP 60V 0.05A TO78
Qualification: MIL-PRF-19500/336
Grade: Military
Supplier Device Package: TO-78-6
DC Current Gain (hFE) (Min) @ Ic, Vce: 150 @ 1mA, 5V
Current - Collector Cutoff (Max): 10µA (ICBO)
Vce Saturation (Max) @ Ib, Ic: 250mV @ 100µA, 1mA
Voltage - Collector Emitter Breakdown (Max): 60V
Current - Collector (Ic) (Max): 50mA
Power - Max: 350mW
Operating Temperature: -65°C ~ 200°C (TJ)
Transistor Type: 2 PNP (Dual)
Mounting Type: Through Hole
Package / Case: TO-78-6 Metal Can
Packaging: Bulk
Produkt ist nicht verfügbar
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Jantxv2N3810L Jantxv2N3810L Microchip Technology 8931-lds-0118-datasheet Description: TRANS 2PNP 60V 0.05A
Qualification: MIL-PRF-19500/336
Grade: Military
Supplier Device Package: TO-78-6
DC Current Gain (hFE) (Min) @ Ic, Vce: 150 @ 1mA, 5V
Current - Collector Cutoff (Max): 10µA (ICBO)
Vce Saturation (Max) @ Ib, Ic: 250mV @ 100µA, 1mA
Voltage - Collector Emitter Breakdown (Max): 60V
Current - Collector (Ic) (Max): 50mA
Power - Max: 350mW
Operating Temperature: -65°C ~ 200°C (TJ)
Transistor Type: 2 PNP (Dual)
Mounting Type: Through Hole
Package / Case: TO-78-6 Metal Can
Packaging: Bulk
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Jantxv2N4033 Jantxv2N4033 Microchip Technology 6070-2n4029-datasheet Description: TRANS PNP 80V 1A TO39
Power - Max: 800 mW
Voltage - Collector Emitter Breakdown (Max): 80 V
Current - Collector (Ic) (Max): 1 A
Part Status: Discontinued at Digi-Key
Supplier Device Package: TO-39
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 100mA, 5V
Current - Collector Cutoff (Max): 10µA (ICBO)
Vce Saturation (Max) @ Ib, Ic: 1V @ 100mA, 1A
Operating Temperature: -55°C ~ 200°C (TJ)
Transistor Type: PNP
Mounting Type: Through Hole
Package / Case: TO-205AD, TO-39-3 Metal Can
Packaging: Bulk
Qualification: MIL-PRF-19500/512
Grade: Military
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JANTXV1N4942 129281-lds-0295-datasheet
JANTXV1N4942
Hersteller: Microchip Technology
Description: DIODE GEN PURP 200V 1A AXIAL
Qualification: MIL-PRF-19500/359
Current - Reverse Leakage @ Vr: 1 µA @ 200 V
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 1 A
Voltage - DC Reverse (Vr) (Max): 200 V
Grade: Military
Operating Temperature - Junction: -65°C ~ 175°C
Supplier Device Package: A, Axial
Current - Average Rectified (Io): 1A
Capacitance @ Vr, F: 45pF @ 12V, 1MHz
Technology: Standard
Reverse Recovery Time (trr): 150 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Through Hole
Package / Case: A, Axial
Packaging: Bulk
Produkt ist nicht verfügbar
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JANTXV1N4944 129281-lds-0295-datasheet
JANTXV1N4944
Hersteller: Microchip Technology
Description: DIODE GEN PURP 400V 1A AXIAL
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 1 A
Voltage - DC Reverse (Vr) (Max): 400 V
Part Status: Active
Operating Temperature - Junction: -65°C ~ 175°C
Supplier Device Package: A, Axial
Current - Average Rectified (Io): 1A
Capacitance @ Vr, F: 35pF @ 12V, 1MHz
Technology: Standard
Reverse Recovery Time (trr): 150 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Through Hole
Package / Case: A, Axial
Packaging: Bulk
Current - Reverse Leakage @ Vr: 1 µA @ 400 V
Produkt ist nicht verfügbar
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JANTXV1N4960 10913-sa5-37-datasheet
JANTXV1N4960
Hersteller: Microchip Technology
Description: DIODE ZENER 12V 5W AXIAL
Qualification: MIL-PRF-19500/356
Current - Reverse Leakage @ Vr: 10 µA @ 9.1 V
Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 1 A
Power - Max: 5 W
Grade: Military
Impedance (Max) (Zzt): 2.5 Ohms
Voltage - Zener (Nom) (Vz): 12 V
Operating Temperature: -65°C ~ 175°C
Mounting Type: Through Hole
Package / Case: E, Axial
Tolerance: ±5%
Packaging: Bulk
Produkt ist nicht verfügbar
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JANTXV1N4960US 11059-sd44a-datasheet
JANTXV1N4960US
Hersteller: Microchip Technology
Description: DIODE ZENER 12V 5W D5B
Qualification: MIL-PRF-19500/356
Current - Reverse Leakage @ Vr: 10 µA @ 9.1 V
Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 1 A
Power - Max: 5 W
Grade: Military
Supplier Device Package: D-5B
Impedance (Max) (Zzt): 2.5 Ohms
Voltage - Zener (Nom) (Vz): 12 V
Operating Temperature: -65°C ~ 175°C
Mounting Type: Surface Mount
Package / Case: SQ-MELF, E
Tolerance: ±5%
Packaging: Bulk
Produkt ist nicht verfügbar
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JANTXV1N4978 1N4954-1N4996%2C15968-1N5969%2C1N6632-1N6637.pdf
JANTXV1N4978
Hersteller: Microchip Technology
Description: DIODE ZENER 68V 5W AXIAL
Packaging: Bulk
Current - Reverse Leakage @ Vr: 2 µA @ 51.7 V
Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 1 A
Power - Max: 5 W
Part Status: Active
Impedance (Max) (Zzt): 50 Ohms
Voltage - Zener (Nom) (Vz): 68 V
Operating Temperature: -65°C ~ 175°C
Mounting Type: Through Hole
Package / Case: E, Axial
Tolerance: ±5%
Qualification: MIL-PRF-19500/356
Grade: Military
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JANTXV1N4978US 1N4954US-96US%2C1N5968US-69US%2C1N6632US-1N6637US.pdf
JANTXV1N4978US
Hersteller: Microchip Technology
Description: DIODE ZENER 68V 5W D5B
Current - Reverse Leakage @ Vr: 2 µA @ 51.7 V
Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 1 A
Power - Max: 5 W
Part Status: Active
Supplier Device Package: D-5B
Impedance (Max) (Zzt): 50 Ohms
Voltage - Zener (Nom) (Vz): 68 V
Operating Temperature: -65°C ~ 175°C
Mounting Type: Surface Mount
Package / Case: SQ-MELF, E
Tolerance: ±5%
Packaging: Bulk
Qualification: MIL-PRF-19500/356
Grade: Military
Produkt ist nicht verfügbar
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JANTXV1N4980 1N4954-1N4996%2C15968-1N5969%2C1N6632-1N6637.pdf
JANTXV1N4980
Hersteller: Microchip Technology
Description: DIODE ZENER 82V 5W AXIAL
Qualification: MIL-PRF-19500/356
Grade: Military
Current - Reverse Leakage @ Vr: 2 µA @ 62.2 V
Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 1 A
Power - Max: 5 W
Part Status: Discontinued at Digi-Key
Impedance (Max) (Zzt): 80 Ohms
Voltage - Zener (Nom) (Vz): 82 V
Operating Temperature: -65°C ~ 175°C
Mounting Type: Through Hole
Package / Case: E, Axial
Tolerance: ±5%
Packaging: Bulk
Produkt ist nicht verfügbar
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JANTXV1N4980US 1N4954US-96US%2C1N5968US-69US%2C1N6632US-1N6637US.pdf
JANTXV1N4980US
Hersteller: Microchip Technology
Description: DIODE ZENER 82V 5W D5B
Qualification: MIL-PRF-19500/356
Grade: Military
Current - Reverse Leakage @ Vr: 2 µA @ 62.2 V
Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 1 A
Power - Max: 5 W
Part Status: Discontinued at Digi-Key
Supplier Device Package: D-5B
Impedance (Max) (Zzt): 80 Ohms
Voltage - Zener (Nom) (Vz): 82 V
Operating Temperature: -65°C ~ 175°C
Mounting Type: Surface Mount
Package / Case: SQ-MELF, E
Tolerance: ±5%
Packaging: Bulk
Produkt ist nicht verfügbar
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JANTXV1N5416US LDS-0231-1%2C+1N5415US+thru1N5420US%2C+MIL-PRF-19500-411.pdf
JANTXV1N5416US
Hersteller: Microchip Technology
Description: DIODE STANDARD 100V 3A D5B
Qualification: MIL-PRF-19500/411
Current - Reverse Leakage @ Vr: 1 µA @ 100 V
Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 9 A
Voltage - DC Reverse (Vr) (Max): 100 V
Grade: Military
Operating Temperature - Junction: -65°C ~ 175°C
Supplier Device Package: D-5B
Current - Average Rectified (Io): 3A
Technology: Standard
Reverse Recovery Time (trr): 150 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: SQ-MELF, E
Packaging: Bulk
Produkt ist nicht verfügbar
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JANTXV1N5420 124360-lds-0231-datasheet
JANTXV1N5420
Hersteller: Microchip Technology
Description: DIODE GEN PURP 600V 3A B AXIAL
Current - Reverse Leakage @ Vr: 1 µA @ 600 V
Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 9 A
Voltage - DC Reverse (Vr) (Max): 600 V
Operating Temperature - Junction: -65°C ~ 175°C
Supplier Device Package: B, Axial
Current - Average Rectified (Io): 3A
Technology: Standard
Reverse Recovery Time (trr): 250 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Through Hole
Package / Case: B, Axial
Packaging: Bulk
Qualification: MIL-PRF-19500/411
Grade: Military
Produkt ist nicht verfügbar
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JANTXV1N5420US 11075-lds-0231-1-datasheet
JANTXV1N5420US
Hersteller: Microchip Technology
Description: DIODE GEN PURP 600V 3A D-5B
Supplier Device Package: D-5B
Current - Average Rectified (Io): 3A
Technology: Standard
Reverse Recovery Time (trr): 400 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: SQ-MELF, E
Packaging: Bulk
Qualification: MIL-PRF-19500/411
Grade: Military
Current - Reverse Leakage @ Vr: 1 µA @ 600 V
Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 9 A
Voltage - DC Reverse (Vr) (Max): 600 V
Operating Temperature - Junction: -65°C ~ 175°C
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JANTXV1N5553 LDS-0230%2C+1N5550+thru+1N5554%2C+MIL-PRF-19500-420.pdf
JANTXV1N5553
Hersteller: Microchip Technology
Description: DIODE STANDARD 800V 5A B AXIAL
Packaging: Bulk
Package / Case: B, Axial
Mounting Type: Through Hole
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): 2 µs
Technology: Standard
Current - Average Rectified (Io): 5A
Supplier Device Package: B, Axial
Operating Temperature - Junction: -65°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 800 V
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 9 A
Current - Reverse Leakage @ Vr: 1 µA @ 800 V
Grade: Military
Qualification: MIL-PRF-19500/420
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1+19.99 EUR
100+18.57 EUR
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JANTXV1N5554 11519-lds-0230-datasheet
JANTXV1N5554
Hersteller: Microchip Technology
Description: DIODE STANDARD 1000V 5A B AXIAL
Qualification: MIL-PRF-19500/420
Grade: Military
Current - Reverse Leakage @ Vr: 1 µA @ 1000 V
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 9 A
Voltage - DC Reverse (Vr) (Max): 1000 V
Operating Temperature - Junction: -65°C ~ 175°C
Supplier Device Package: B, Axial
Current - Average Rectified (Io): 5A
Technology: Standard
Reverse Recovery Time (trr): 2 µs
Speed: Standard Recovery >500ns, > 200mA (Io)
Mounting Type: Through Hole
Package / Case: B, Axial
Packaging: Bulk
Produkt ist nicht verfügbar
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JANTXV1N5615 10968-sa7-47-datasheet
JANTXV1N5615
Hersteller: Microchip Technology
Description: DIODE GEN PURP 200V 1A AXIAL
Current - Reverse Leakage @ Vr: 500 nA @ 200 V
Voltage - Forward (Vf) (Max) @ If: 1.6 V @ 3 A
Voltage - DC Reverse (Vr) (Max): 200 V
Part Status: Active
Operating Temperature - Junction: -65°C ~ 175°C
Supplier Device Package: A, Axial
Current - Average Rectified (Io): 1A
Capacitance @ Vr, F: 45pF @ 12V, 1MHz
Technology: Standard
Reverse Recovery Time (trr): 150 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Through Hole
Qualification: MIL-PRF-19500/429
Grade: Military
Package / Case: A, Axial
Packaging: Bulk
Produkt ist nicht verfügbar
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JANTXV1N5619 10968-sa7-47-datasheet
JANTXV1N5619
Hersteller: Microchip Technology
Description: DIODE STANDARD 600V 1A AXIAL
Mounting Type: Through Hole
Package / Case: A, Axial
Packaging: Bulk
Qualification: MIL-PRF-19500/429
Current - Reverse Leakage @ Vr: 500 nA @ 600 V
Voltage - Forward (Vf) (Max) @ If: 1.6 V @ 3 A
Voltage - DC Reverse (Vr) (Max): 600 V
Grade: Military
Operating Temperature - Junction: -65°C ~ 175°C
Supplier Device Package: A, Axial
Current - Average Rectified (Io): 1A
Capacitance @ Vr, F: 25pF @ 12V, 1MHz
Technology: Standard
Reverse Recovery Time (trr): 250 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Produkt ist nicht verfügbar
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JANTXV1N5804 132686-lds-0211.pdf
JANTXV1N5804
Hersteller: Microchip Technology
Description: DIODE STANDARD 100V 1A AXIAL
Packaging: Bulk
Package / Case: A, Axial
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 25 ns
Technology: Standard
Capacitance @ Vr, F: 25pF @ 10V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: A, Axial
Operating Temperature - Junction: -65°C ~ 175°C
Grade: Military
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 875 mV @ 1 A
Current - Reverse Leakage @ Vr: 1 µA @ 100 V
Qualification: MIL-PRF-19500/477
Produkt ist nicht verfügbar
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JANTXV1N5804US LDS-0211+%282%29%2C+1N5802-1N5804-1N5806%2C+MIL-PRF-19500-477.pdf
JANTXV1N5804US
Hersteller: Microchip Technology
Description: DIODE STANDARD 100V 1A D5A
Packaging: Bulk
Package / Case: SQ-MELF, A
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 25 ns
Technology: Standard
Capacitance @ Vr, F: 25pF @ 10V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: D-5A
Operating Temperature - Junction: -65°C ~ 175°C
Grade: Military
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 875 mV @ 1 A
Current - Reverse Leakage @ Vr: 1 µA @ 100 V
Qualification: MIL-PRF-19500/477
Produkt ist nicht verfügbar
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JANTXV1N5811US LDS-0168-1%2C+1N5807US-1N5809US-1N5811US%28URS%29%2C+MIL-PRF-19500-477.pdf
JANTXV1N5811US
Hersteller: Microchip Technology
Description: DIODE STANDARD 150V 3A B SQMELF
Packaging: Bulk
Package / Case: SQ-MELF, B
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 30 ns
Technology: Standard
Capacitance @ Vr, F: 60pF @ 10V, 1MHz
Current - Average Rectified (Io): 3A
Supplier Device Package: B, SQ-MELF
Operating Temperature - Junction: -65°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 150 V
Voltage - Forward (Vf) (Max) @ If: 875 mV @ 4 A
Current - Reverse Leakage @ Vr: 5 µA @ 150 V
Grade: Military
Qualification: MIL-PRF-19500/477
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AnzahlPreis
2+17.32 EUR
100+16.09 EUR
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JANTXV1N6118A lds-0277.pdf
JANTXV1N6118A
Hersteller: Microchip Technology
Description: TVS DIODE 25.1VWM 45.7V AXIAL
Packaging: Bulk
Package / Case: B, Axial
Mounting Type: Through Hole
Type: Zener
Operating Temperature: -55°C ~ 175°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 10.9A
Voltage - Reverse Standoff (Typ): 25.1V
Supplier Device Package: B, Axial
Bidirectional Channels: 1
Voltage - Breakdown (Min): 31.4V
Voltage - Clamping (Max) @ Ipp: 45.7V
Power - Peak Pulse: 500W
Power Line Protection: No
Grade: Military
Part Status: Active
Qualification: MIL-PRF-19500/516
Produkt ist nicht verfügbar
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JANTXV1N6118AUS lds-0277-1.pdf
JANTXV1N6118AUS
Hersteller: Microchip Technology
Description: TVS DIODE 25.1VWM 45.7VC SQMELF
Packaging: Bulk
Package / Case: SQ-MELF, B
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 175°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 10.9A
Voltage - Reverse Standoff (Typ): 25.1V
Supplier Device Package: B, SQ-MELF
Bidirectional Channels: 1
Voltage - Breakdown (Min): 31.4V
Voltage - Clamping (Max) @ Ipp: 45.7V
Power - Peak Pulse: 500W
Power Line Protection: No
Grade: Military
Part Status: Active
Qualification: MIL-PRF-19500/516
Produkt ist nicht verfügbar
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JANTXV1N6126A lds-0277.pdf
JANTXV1N6126A
Hersteller: Microchip Technology
Description: TVS DIODE 51.7VWM 97.1V AXIAL
Packaging: Bulk
Package / Case: B, Axial
Mounting Type: Through Hole
Type: Zener
Operating Temperature: -55°C ~ 175°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 5.1A
Voltage - Reverse Standoff (Typ): 51.7V
Supplier Device Package: B, Axial
Bidirectional Channels: 1
Voltage - Breakdown (Min): 64.6V
Voltage - Clamping (Max) @ Ipp: 97.1V
Power - Peak Pulse: 500W
Power Line Protection: No
Grade: Military
Part Status: Active
Qualification: MIL-PRF-19500/516
Produkt ist nicht verfügbar
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JANTXV1N6126AUS lds-0277-1.pdf
JANTXV1N6126AUS
Hersteller: Microchip Technology
Description: TVS DIODE 51.7VWM 97.1VC SQMELF
Qualification: MIL-PRF-19500/516
Grade: Military
Power Line Protection: No
Power - Peak Pulse: 500W
Voltage - Clamping (Max) @ Ipp: 97.1V
Voltage - Breakdown (Min): 64.6V
Bidirectional Channels: 1
Supplier Device Package: B, SQ-MELF
Voltage - Reverse Standoff (Typ): 51.7V
Current - Peak Pulse (10/1000µs): 5.1A
Applications: General Purpose
Operating Temperature: -55°C ~ 175°C (TJ)
Type: Zener
Mounting Type: Surface Mount
Package / Case: SQ-MELF, B
Packaging: Bulk
Produkt ist nicht verfügbar
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JANTXV1N6156A 127853-1n6138-1n6173a-tvs-diode-series-datasheet
JANTXV1N6156A
Hersteller: Microchip Technology
Description: TVS DIODE 29.7VWM 53.6VC C AXIAL
Part Status: Active
Power Line Protection: No
Power - Peak Pulse: 1500W (1.5kW)
Voltage - Clamping (Max) @ Ipp: 53.6V
Voltage - Breakdown (Min): 37.1V
Bidirectional Channels: 1
Supplier Device Package: C, Axial
Voltage - Reverse Standoff (Typ): 29.7V
Current - Peak Pulse (10/1000µs): 28A
Applications: General Purpose
Operating Temperature: -55°C ~ 175°C (TJ)
Type: Zener
Mounting Type: Through Hole
Package / Case: G, Axial
Packaging: Bulk
Produkt ist nicht verfügbar
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JANTXV1N6461US 11066-sd50a-datasheet
JANTXV1N6461US
Hersteller: Microchip Technology
Description: TVS DIODE 5VWM 9VC B SQ-MELF
Qualification: MIL-PRF-19500/551
Grade: Military
Power Line Protection: No
Power - Peak Pulse: 500W
Voltage - Clamping (Max) @ Ipp: 9V
Voltage - Breakdown (Min): 5.6V
Unidirectional Channels: 1
Supplier Device Package: B, SQ-MELF
Voltage - Reverse Standoff (Typ): 5V
Current - Peak Pulse (10/1000µs): 315A (8/20µs)
Applications: General Purpose
Operating Temperature: -55°C ~ 175°C (TJ)
Type: Zener
Mounting Type: Surface Mount
Package / Case: SQ-MELF, B
Packaging: Bulk
Produkt ist nicht verfügbar
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JANTXV1N6628 10973-sa7-57-datasheet
JANTXV1N6628
Hersteller: Microchip Technology
Description: DIODE GEN PURP 660V 1.75A AXIAL
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JANTXV1N829-1 125462-lds-0220-datasheet
JANTXV1N829-1
Hersteller: Microchip Technology
Description: DIODE ZENER 6.2V 500MW DO35
Current - Reverse Leakage @ Vr: 2 µA @ 3 V
Power - Max: 500 mW
Part Status: Active
Supplier Device Package: DO-204AH (DO-35)
Impedance (Max) (Zzt): 15 Ohms
Voltage - Zener (Nom) (Vz): 6.2 V
Mounting Type: Through Hole
Package / Case: DO-204AH, DO-35, Axial
Tolerance: ±5%
Packaging: Bulk
Qualification: MIL-PRF-19500/159
Grade: Military
Produkt ist nicht verfügbar
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JANTXV1N829UR-1 11037-lds-0220-1-datasheet
Hersteller: Microchip Technology
Description: DIODE ZENER 6.2V 500MW DO213AA
Current - Reverse Leakage @ Vr: 2 µA @ 3 V
Power - Max: 500 mW
Part Status: Active
Supplier Device Package: DO-213AA
Impedance (Max) (Zzt): 15 Ohms
Voltage - Zener (Nom) (Vz): 6.2 V
Mounting Type: Surface Mount
Package / Case: DO-213AA
Tolerance: ±5%
Packaging: Bulk
Qualification: MIL-PRF-19500/159
Grade: Military
Produkt ist nicht verfügbar
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JANTXV2N2219 2N2218-2N2219AL-LDS0091-MIL-PRF-19500-251.pdf
JANTXV2N2219
Hersteller: Microchip Technology
Description: TRANS NPN 30V 0.8A TO-205AD
Packaging: Bulk
Package / Case: TO-205AD, TO-39-3 Metal Can
Mounting Type: Through Hole
Transistor Type: NPN
Operating Temperature: -55°C ~ 200°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 1.6V @ 50mA, 500mA
Current - Collector Cutoff (Max): 10nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 150mA, 10V
Supplier Device Package: TO-205AD
Part Status: Active
Current - Collector (Ic) (Max): 800 mA
Voltage - Collector Emitter Breakdown (Max): 30 V
Power - Max: 800 mW
Grade: Military
Qualification: MIL-PRF-19500/251
Produkt ist nicht verfügbar
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JANTXV2N2219A 2N2218-2N2219AL-LDS0091-MIL-PRF-19500-251.pdf
JANTXV2N2219A
Hersteller: Microchip Technology
Description: TRANS NPN 50V 0.8A TO-205AD
Packaging: Bulk
Package / Case: TO-205AD, TO-39-3 Metal Can
Mounting Type: Through Hole
Transistor Type: NPN
Operating Temperature: -55°C ~ 200°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 1V @ 50mA, 500mA
Current - Collector Cutoff (Max): 10nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 150mA, 10V
Supplier Device Package: TO-205AD
Grade: Military
Part Status: Active
Current - Collector (Ic) (Max): 800 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 800 mW
Qualification: MIL-PRF-19500/251
auf Bestellung 156 Stücke:
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AnzahlPreis
2+11.81 EUR
100+10.97 EUR
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Jantxv2N2219AL 2N2218-2N2219AL-LDS0091-MIL-PRF-19500-251.pdf
Jantxv2N2219AL
Hersteller: Microchip Technology
Description: TRANS NPN 50V 0.8A TO-5
Packaging: Bulk
Package / Case: TO-205AA, TO-5-3 Metal Can
Mounting Type: Through Hole
Transistor Type: NPN
Operating Temperature: -55°C ~ 200°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 1V @ 50mA, 500mA
Current - Collector Cutoff (Max): 10nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 150mA, 10V
Supplier Device Package: TO-5
Part Status: Active
Current - Collector (Ic) (Max): 800 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 800 mW
Grade: Military
Qualification: MIL-PRF-19500/251
Produkt ist nicht verfügbar
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JANTXV2N2222A MIL-PRF-19500_255AA_wAmendment1_5-19-16.pdf
JANTXV2N2222A
Hersteller: Microchip Technology
Description: TRANS NPN 50V 0.8A TO-18
Packaging: Bulk
Package / Case: TO-206AA, TO-18-3 Metal Can
Mounting Type: Through Hole
Transistor Type: NPN
Operating Temperature: -65°C ~ 200°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 1V @ 50mA, 500mA
Current - Collector Cutoff (Max): 50nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 150mA, 10V
Supplier Device Package: TO-18 (TO-206AA)
Part Status: Active
Current - Collector (Ic) (Max): 800 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 500 mW
Grade: Military
Qualification: MIL-PRF-19500/255
auf Bestellung 602 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPreis
4+5.7 EUR
100+5.29 EUR
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Jantxv2N2222AL MIL-PRF-19500_255AA_wAmendment1_5-19-16.pdf
Jantxv2N2222AL
Hersteller: Microchip Technology
Description: TRANS NPN 50V 0.8A TO-18
Packaging: Bulk
Package / Case: TO-206AA, TO-18-3 Metal Can
Mounting Type: Through Hole
Transistor Type: NPN
Operating Temperature: -65°C ~ 200°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 1V @ 50mA, 500mA
Current - Collector Cutoff (Max): 50nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 150mA, 10V
Supplier Device Package: TO-18 (TO-206AA)
Part Status: Active
Current - Collector (Ic) (Max): 800 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 500 mW
Grade: Military
Qualification: MIL-PRF-19500/255
Produkt ist nicht verfügbar
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Jantxv2N2222AUA MIL-PRF-19500_255AA_wAmendment1_5-19-16.pdf
Jantxv2N2222AUA
Hersteller: Microchip Technology
Description: TRANS NPN 50V 0.8A 4-SMD
Packaging: Bulk
Package / Case: 4-SMD, No Lead
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: -65°C ~ 200°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 1V @ 50mA, 500mA
Current - Collector Cutoff (Max): 50nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 150mA, 10V
Supplier Device Package: 4-SMD
Part Status: Active
Current - Collector (Ic) (Max): 800 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 650 mW
Grade: Military
Qualification: MIL-PRF-19500/255
Produkt ist nicht verfügbar
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JANTXV2N2222AUB MIL-PRF-19500_255AA_wAmendment1_5-19-16.pdf
JANTXV2N2222AUB
Hersteller: Microchip Technology
Description: TRANS NPN 50V 0.8A UB
Packaging: Bulk
Package / Case: 3-SMD, No Lead
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: -65°C ~ 200°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 1V @ 50mA, 500mA
Current - Collector Cutoff (Max): 50nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 150mA, 10V
Supplier Device Package: UB
Part Status: Active
Current - Collector (Ic) (Max): 800 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 500 mW
Grade: Military
Qualification: MIL-PRF-19500/255
Produkt ist nicht verfügbar
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JANTXV2N2369AUB 2N2369A-2N4449-MIL-PRF-19500-317.pdf
JANTXV2N2369AUB
Hersteller: Microchip Technology
Description: TRANS NPN 20V UB
Packaging: Bulk
Package / Case: 4-SMD, No Lead
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: -65°C ~ 200°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 450mV @ 10mA, 100mA
Current - Collector Cutoff (Max): 400nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 20 @ 100mA, 1V
Supplier Device Package: UB
Part Status: Active
Voltage - Collector Emitter Breakdown (Max): 20 V
Power - Max: 400 mW
Grade: Military
Qualification: MIL-PRF-19500/317
Produkt ist nicht verfügbar
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Jantxv2N2484
Hersteller: Microchip Technology
Description: TRANS NPN 60V 0.05A TO-18
Packaging: Bulk
Package / Case: TO-206AA, TO-18-3 Metal Can
Mounting Type: Through Hole
Transistor Type: NPN
Operating Temperature: -65°C ~ 200°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 300mV @ 100µA, 1mA
Current - Collector Cutoff (Max): 2nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 225 @ 10mA, 5V
Supplier Device Package: TO-18
Part Status: Discontinued at Digi-Key
Current - Collector (Ic) (Max): 50 mA
Voltage - Collector Emitter Breakdown (Max): 60 V
Power - Max: 360 mW
Grade: Military
Qualification: MIL-PRF-19500/376
Produkt ist nicht verfügbar
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Jantxv2N2484UB 2N2484+MIL-PRF-19500_376.pdf
Jantxv2N2484UB
Hersteller: Microchip Technology
Description: TRANS NPN 60V 0.05A UB
Packaging: Bulk
Package / Case: 3-SMD, No Lead
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: -65°C ~ 200°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 300mV @ 100µA, 1mA
Current - Collector Cutoff (Max): 2nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 225 @ 10mA, 5V
Supplier Device Package: UB
Current - Collector (Ic) (Max): 50 mA
Voltage - Collector Emitter Breakdown (Max): 60 V
Power - Max: 360 mW
Grade: Military
Qualification: MIL-PRF-19500/376
Produkt ist nicht verfügbar
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JANTXV2N2905A 2N2904-2N2905-MIL-PRF-19500-290.pdf
JANTXV2N2905A
Hersteller: Microchip Technology
Description: TRANS PNP 60V 0.6A TO-39
Packaging: Bulk
Package / Case: TO-205AD, TO-39-3 Metal Can
Mounting Type: Through Hole
Transistor Type: PNP
Operating Temperature: -65°C ~ 200°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 1.6V @ 50mA, 500mA
Current - Collector Cutoff (Max): 1µA
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 150mA, 10V
Supplier Device Package: TO-39
Part Status: Active
Current - Collector (Ic) (Max): 600 mA
Voltage - Collector Emitter Breakdown (Max): 60 V
Power - Max: 800 mW
Grade: Military
Qualification: MIL-PRF-19500/290
Produkt ist nicht verfügbar
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Jantxv2N2905AL LDS-0186_2N2904-05%28AL%29.pdf
Jantxv2N2905AL
Hersteller: Microchip Technology
Description: TRANS PNP 60V 0.6A TO-5
Packaging: Bulk
Package / Case: TO-205AA, TO-5-3 Metal Can
Mounting Type: Through Hole
Transistor Type: PNP
Operating Temperature: -65°C ~ 200°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 1.6V @ 50mA, 500mA
Current - Collector Cutoff (Max): 1µA
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 150mA, 10V
Supplier Device Package: TO-5
Part Status: Discontinued at Digi-Key
Current - Collector (Ic) (Max): 600 mA
Voltage - Collector Emitter Breakdown (Max): 60 V
Power - Max: 800 mW
Grade: Military
Qualification: MIL-PRF-19500/290
Produkt ist nicht verfügbar
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Jantxv2N2906A 8896-lds-0059-datasheet
Jantxv2N2906A
Hersteller: Microchip Technology
Description: TRANS PNP 60V 0.6A TO18
Qualification: MIL-PRF-19500/291
Grade: Military
Power - Max: 500 mW
Voltage - Collector Emitter Breakdown (Max): 60 V
Current - Collector (Ic) (Max): 600 mA
Part Status: Active
Supplier Device Package: TO-18
DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 150mA, 10V
Operating Temperature: -65°C ~ 200°C (TJ)
Transistor Type: PNP
Mounting Type: Through Hole
Package / Case: TO-206AA, TO-18-3 Metal Can
Packaging: Bulk
Current - Collector Cutoff (Max): 50nA
Vce Saturation (Max) @ Ib, Ic: 1.6V @ 50mA, 500mA
Produkt ist nicht verfügbar
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JANTXV2N2906AUB 8896-lds-0059-datasheet
JANTXV2N2906AUB
Hersteller: Microchip Technology
Description: TRANS PNP 60V 0.6A UB
Power - Max: 500 mW
Voltage - Collector Emitter Breakdown (Max): 60 V
Current - Collector (Ic) (Max): 600 mA
Part Status: Discontinued at Digi-Key
Supplier Device Package: UB
DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 150mA, 10V
Current - Collector Cutoff (Max): 50nA
Vce Saturation (Max) @ Ib, Ic: 1.6V @ 50mA, 500mA
Operating Temperature: -65°C ~ 200°C (TJ)
Transistor Type: PNP
Mounting Type: Surface Mount
Package / Case: 3-SMD, No Lead
Packaging: Bulk
Qualification: MIL-PRF-19500/291
Grade: Military
Produkt ist nicht verfügbar
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JANTXV2N2907AL MIL-PRF-19500_291Y_wAmendment1_7-10-19.pdf
JANTXV2N2907AL
Hersteller: Microchip Technology
Description: TRANS PNP 60V 0.6A TO-18
Packaging: Bulk
Package / Case: TO-206AA, TO-18-3 Metal Can
Mounting Type: Through Hole
Transistor Type: PNP
Operating Temperature: -65°C ~ 200°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 1.6V @ 50mA, 500mA
Current - Collector Cutoff (Max): 50nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 150mA, 10V
Supplier Device Package: TO-18
Part Status: Active
Current - Collector (Ic) (Max): 600 mA
Voltage - Collector Emitter Breakdown (Max): 60 V
Power - Max: 500 mW
Grade: Military
Qualification: MIL-PRF-19500/291
Produkt ist nicht verfügbar
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Jantxv2N2907AUA 8896-lds-0059-datasheet
Hersteller: Microchip Technology
Description: TRANS PNP 60V 0.6A UA
Qualification: MIL-PRF-19500/291
Grade: Military
Power - Max: 500 mW
Part Status: Active
Supplier Device Package: UA
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 150mA, 10V
Current - Collector Cutoff (Max): 50nA
Vce Saturation (Max) @ Ib, Ic: 1.6V @ 50mA, 500mA
Operating Temperature: -65°C ~ 200°C (TJ)
Transistor Type: PNP
Mounting Type: Surface Mount
Package / Case: 4-SMD, No Lead
Packaging: Bulk
Voltage - Collector Emitter Breakdown (Max): 60 V
Current - Collector (Ic) (Max): 600 mA
Produkt ist nicht verfügbar
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JANTXV2N2907AUB MIL-PRF-19500_291Y_wAmendment1_7-10-19.pdf
JANTXV2N2907AUB
Hersteller: Microchip Technology
Description: TRANS PNP 60V 0.6A UB
Packaging: Bulk
Package / Case: 4-SMD, No Lead
Mounting Type: Surface Mount
Transistor Type: PNP
Operating Temperature: -65°C ~ 200°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 1.6V @ 50mA, 500mA
Current - Collector Cutoff (Max): 50nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 150mA, 10V
Supplier Device Package: UB
Part Status: Active
Current - Collector (Ic) (Max): 600 mA
Voltage - Collector Emitter Breakdown (Max): 60 V
Power - Max: 500 mW
Grade: Military
Qualification: MIL-PRF-19500/291
auf Bestellung 219 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPreis
2+11.49 EUR
100+10.66 EUR
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Jantxv2N2946A 124373-lds-0236-datasheet
Jantxv2N2946A
Hersteller: Microchip Technology
Description: TRANS PNP 35V 0.1A TO46
Power - Max: 400 mW
Voltage - Collector Emitter Breakdown (Max): 35 V
Current - Collector (Ic) (Max): 100 mA
Part Status: Active
Supplier Device Package: TO-46 (TO-206AB)
DC Current Gain (hFE) (Min) @ Ic, Vce: 50 @ 1mA, 500mV
Current - Collector Cutoff (Max): 10µA (ICBO)
Operating Temperature: -65°C ~ 200°C (TJ)
Transistor Type: PNP
Mounting Type: Through Hole
Package / Case: TO-206AB, TO-46-3 Metal Can
Packaging: Bulk
Qualification: MIL-PRF-19500/382
Grade: Military
Produkt ist nicht verfügbar
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Jantxv2N3019 122693-lds-0185-datasheet
Jantxv2N3019
Hersteller: Microchip Technology
Description: TRANS NPN 80V 1A TO-5
Qualification: MIL-PRF-19500/391
Grade: Military
Power - Max: 800 mW
Voltage - Collector Emitter Breakdown (Max): 80 V
Current - Collector (Ic) (Max): 1 A
Part Status: Active
Supplier Device Package: TO-5
DC Current Gain (hFE) (Min) @ Ic, Vce: 50 @ 500mA, 10V
Current - Collector Cutoff (Max): 10µA (ICBO)
Vce Saturation (Max) @ Ib, Ic: 500mV @ 50mA, 500mA
Operating Temperature: -65°C ~ 200°C (TJ)
Transistor Type: NPN
Mounting Type: Through Hole
Package / Case: TO-205AA, TO-5-3 Metal Can
Packaging: Bulk
Produkt ist nicht verfügbar
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JANTXV2N3019S 125195-lds-0185-4-datasheet
JANTXV2N3019S
Hersteller: Microchip Technology
Description: TRANS NPN 80V 1A TO-39
Qualification: MIL-PRF-19500/391
Grade: Military
Power - Max: 800 mW
Voltage - Collector Emitter Breakdown (Max): 80 V
Current - Collector (Ic) (Max): 1 A
Part Status: Active
Supplier Device Package: TO-39
DC Current Gain (hFE) (Min) @ Ic, Vce: 50 @ 500mA, 10V
Current - Collector Cutoff (Max): 10µA (ICBO)
Vce Saturation (Max) @ Ib, Ic: 500mV @ 50mA, 500mA
Operating Temperature: -65°C ~ 200°C (TJ)
Transistor Type: NPN
Mounting Type: Through Hole
Package / Case: TO-205AD, TO-39-3 Metal Can
Packaging: Bulk
Produkt ist nicht verfügbar
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JANTXV2N3439 8830-lds-0022-datasheet
JANTXV2N3439
Hersteller: Microchip Technology
Description: TRANS NPN 350V 1A TO39
Transistor Type: NPN
Mounting Type: Through Hole
Package / Case: TO-205AD, TO-39-3 Metal Can
Packaging: Bulk
Qualification: MIL-PRF-19500/368
Grade: Military
Power - Max: 800 mW
Voltage - Collector Emitter Breakdown (Max): 350 V
Current - Collector (Ic) (Max): 1 A
Part Status: Active
Supplier Device Package: TO-39
DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 20mA, 10V
Current - Collector Cutoff (Max): 2µA
Vce Saturation (Max) @ Ib, Ic: 500mV @ 4mA, 50mA
Operating Temperature: -65°C ~ 200°C (TJ)
Produkt ist nicht verfügbar
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JANTXV2N3439L 124290-lds-0022-1-datasheet
JANTXV2N3439L
Hersteller: Microchip Technology
Description: TRANS NPN 350V 1A TO5
Power - Max: 800 mW
Voltage - Collector Emitter Breakdown (Max): 350 V
Current - Collector (Ic) (Max): 1 A
Part Status: Active
Supplier Device Package: TO-5
DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 20mA, 10V
Qualification: MIL-PRF-19500/368
Grade: Military
Current - Collector Cutoff (Max): 2µA
Vce Saturation (Max) @ Ib, Ic: 500mV @ 4mA, 50mA
Operating Temperature: -65°C ~ 200°C (TJ)
Transistor Type: NPN
Mounting Type: Through Hole
Package / Case: TO-205AA, TO-5-3 Metal Can
Packaging: Bulk
Produkt ist nicht verfügbar
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JANTXV2N3440 LDS-0022_2N3439-40.pdf
JANTXV2N3440
Hersteller: Microchip Technology
Description: TRANS NPN 250V 1A TO-39
Power - Max: 800 mW
Voltage - Collector Emitter Breakdown (Max): 250 V
Current - Collector (Ic) (Max): 1 A
Part Status: Active
Supplier Device Package: TO-39
DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 20mA, 10V
Current - Collector Cutoff (Max): 2µA
Vce Saturation (Max) @ Ib, Ic: 500mV @ 4mA, 50mA
Operating Temperature: -65°C ~ 200°C (TJ)
Transistor Type: NPN
Mounting Type: Through Hole
Package / Case: TO-205AD, TO-39-3 Metal Can
Packaging: Bulk
Qualification: MIL-PRF-19500/368
Grade: Military
Produkt ist nicht verfügbar
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JANTXV2N3440L 124290-lds-0022-1-datasheet
JANTXV2N3440L
Hersteller: Microchip Technology
Description: TRANS NPN 250V 1A TO5
Power - Max: 800 mW
Voltage - Collector Emitter Breakdown (Max): 250 V
Current - Collector (Ic) (Max): 1 A
Part Status: Active
Supplier Device Package: TO-5
DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 20mA, 10V
Current - Collector Cutoff (Max): 2µA
Vce Saturation (Max) @ Ib, Ic: 500mV @ 4mA, 50mA
Operating Temperature: -65°C ~ 200°C (TJ)
Transistor Type: NPN
Mounting Type: Through Hole
Package / Case: TO-205AA, TO-5-3 Metal Can
Packaging: Bulk
Qualification: MIL-PRF-19500/368
Grade: Military
Produkt ist nicht verfügbar
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JANTXV2N3501 125197-lds-0276-datasheet
JANTXV2N3501
Hersteller: Microchip Technology
Description: TRANS NPN 150V 0.3A TO39
Qualification: MIL-PRF-19500/366
Power - Max: 1 W
Voltage - Collector Emitter Breakdown (Max): 150 V
Current - Collector (Ic) (Max): 300 mA
Grade: Military
Supplier Device Package: TO-39 (TO-205AD)
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 150mA, 10V
Current - Collector Cutoff (Max): 10µA (ICBO)
Vce Saturation (Max) @ Ib, Ic: 400mV @ 15mA, 150mA
Operating Temperature: -65°C ~ 200°C (TJ)
Transistor Type: NPN
Mounting Type: Through Hole
Package / Case: TO-205AD, TO-39-3 Metal Can
Packaging: Bulk
Produkt ist nicht verfügbar
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JANTXV2N3501L 125198-lds-0276-1-datasheet
JANTXV2N3501L
Hersteller: Microchip Technology
Description: TRANS NPN 150V 0.3A TO5
Qualification: MIL-PRF-19500/366
Power - Max: 1 W
Voltage - Collector Emitter Breakdown (Max): 150 V
Current - Collector (Ic) (Max): 300 mA
Grade: Military
Supplier Device Package: TO-5
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 150mA, 10V
Current - Collector Cutoff (Max): 10µA (ICBO)
Vce Saturation (Max) @ Ib, Ic: 400mV @ 15mA, 150mA
Operating Temperature: -65°C ~ 200°C (TJ)
Transistor Type: NPN
Mounting Type: Through Hole
Package / Case: TO-205AA, TO-5-3 Metal Can
Packaging: Bulk
Produkt ist nicht verfügbar
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JANTXV2N3501UB 125200-lds-0276-3-datasheet
JANTXV2N3501UB
Hersteller: Microchip Technology
Description: TRANS NPN 150V 0.3A UB
Qualification: MIL-PRF-19500/366
Grade: Military
Power - Max: 500 mW
Voltage - Collector Emitter Breakdown (Max): 150 V
Current - Collector (Ic) (Max): 300 mA
Part Status: Active
Supplier Device Package: UB
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 150mA, 10V
Current - Collector Cutoff (Max): 10µA (ICBO)
Vce Saturation (Max) @ Ib, Ic: 400mV @ 15mA, 150mA
Operating Temperature: -65°C ~ 200°C (TJ)
Transistor Type: NPN
Mounting Type: Surface Mount
Package / Case: 3-SMD, No Lead
Packaging: Bulk
Produkt ist nicht verfügbar
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JANTXV2N3700 LDS-0185_2N3700.pdf
JANTXV2N3700
Hersteller: Microchip Technology
Description: TRANS NPN 80V 1A TO-18
Qualification: MIL-PRF-19500/391
Grade: Military
Power - Max: 500 mW
Voltage - Collector Emitter Breakdown (Max): 80 V
Current - Collector (Ic) (Max): 1 A
Supplier Device Package: TO-18 (TO-206AA)
DC Current Gain (hFE) (Min) @ Ic, Vce: 50 @ 500mA, 10V
Current - Collector Cutoff (Max): 10nA
Vce Saturation (Max) @ Ib, Ic: 500mV @ 50mA, 500mA
Operating Temperature: -65°C ~ 200°C (TJ)
Transistor Type: NPN
Mounting Type: Through Hole
Package / Case: TO-206AA, TO-18-3 Metal Can
Packaging: Bulk
Produkt ist nicht verfügbar
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JANTXV2N3700UB 2N3700UB-LDS-0185-3-MIL-PRF-19500-391.pdf
JANTXV2N3700UB
Hersteller: Microchip Technology
Description: TRANS NPN 80V 1A UB
Qualification: MIL-PRF-19500/391
Grade: Military
Power - Max: 500 mW
Voltage - Collector Emitter Breakdown (Max): 80 V
Current - Collector (Ic) (Max): 1 A
Supplier Device Package: UB
DC Current Gain (hFE) (Min) @ Ic, Vce: 50 @ 500mA, 10V
Current - Collector Cutoff (Max): 10nA
Vce Saturation (Max) @ Ib, Ic: 500mV @ 50mA, 500mA
Operating Temperature: -65°C ~ 200°C (TJ)
Transistor Type: NPN
Mounting Type: Surface Mount
Package / Case: 3-SMD, No Lead
Packaging: Bulk
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JANTXV2N3735L 8978-lds-0173-datasheet
JANTXV2N3735L
Hersteller: Microchip Technology
Description: TRANS NPN 40V 1.5A TO5
Qualification: MIL-PRF-19500/395
Power - Max: 1 W
Voltage - Collector Emitter Breakdown (Max): 40 V
Current - Collector (Ic) (Max): 1.5 A
Grade: Military
Supplier Device Package: TO-5
DC Current Gain (hFE) (Min) @ Ic, Vce: 20 @ 1A, 1.5V
Current - Collector Cutoff (Max): 10µA (ICBO)
Vce Saturation (Max) @ Ib, Ic: 900mV @ 100mA, 1A
Operating Temperature: -65°C ~ 200°C (TJ)
Transistor Type: NPN
Mounting Type: Through Hole
Package / Case: TO-205AA, TO-5-3 Metal Can
Packaging: Bulk
Produkt ist nicht verfügbar
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JANTXV2N3810 8931-lds-0118-datasheet
JANTXV2N3810
Hersteller: Microchip Technology
Description: TRANS 2PNP 60V 0.05A TO78
Qualification: MIL-PRF-19500/336
Grade: Military
Supplier Device Package: TO-78-6
DC Current Gain (hFE) (Min) @ Ic, Vce: 150 @ 1mA, 5V
Current - Collector Cutoff (Max): 10µA (ICBO)
Vce Saturation (Max) @ Ib, Ic: 250mV @ 100µA, 1mA
Voltage - Collector Emitter Breakdown (Max): 60V
Current - Collector (Ic) (Max): 50mA
Power - Max: 350mW
Operating Temperature: -65°C ~ 200°C (TJ)
Transistor Type: 2 PNP (Dual)
Mounting Type: Through Hole
Package / Case: TO-78-6 Metal Can
Packaging: Bulk
Produkt ist nicht verfügbar
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Jantxv2N3810L 8931-lds-0118-datasheet
Jantxv2N3810L
Hersteller: Microchip Technology
Description: TRANS 2PNP 60V 0.05A
Qualification: MIL-PRF-19500/336
Grade: Military
Supplier Device Package: TO-78-6
DC Current Gain (hFE) (Min) @ Ic, Vce: 150 @ 1mA, 5V
Current - Collector Cutoff (Max): 10µA (ICBO)
Vce Saturation (Max) @ Ib, Ic: 250mV @ 100µA, 1mA
Voltage - Collector Emitter Breakdown (Max): 60V
Current - Collector (Ic) (Max): 50mA
Power - Max: 350mW
Operating Temperature: -65°C ~ 200°C (TJ)
Transistor Type: 2 PNP (Dual)
Mounting Type: Through Hole
Package / Case: TO-78-6 Metal Can
Packaging: Bulk
Produkt ist nicht verfügbar
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Jantxv2N4033 6070-2n4029-datasheet
Jantxv2N4033
Hersteller: Microchip Technology
Description: TRANS PNP 80V 1A TO39
Power - Max: 800 mW
Voltage - Collector Emitter Breakdown (Max): 80 V
Current - Collector (Ic) (Max): 1 A
Part Status: Discontinued at Digi-Key
Supplier Device Package: TO-39
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 100mA, 5V
Current - Collector Cutoff (Max): 10µA (ICBO)
Vce Saturation (Max) @ Ib, Ic: 1V @ 100mA, 1A
Operating Temperature: -55°C ~ 200°C (TJ)
Transistor Type: PNP
Mounting Type: Through Hole
Package / Case: TO-205AD, TO-39-3 Metal Can
Packaging: Bulk
Qualification: MIL-PRF-19500/512
Grade: Military
Produkt ist nicht verfügbar
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