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CDLL749A CDLL749A Microchip Technology 5907-1n746aur-1n4370aur-datasheet Description: DIODE ZENER 4.3V 500MW DO213AB
Current - Reverse Leakage @ Vr: 2 µA @ 1 V
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 200 mA
Power - Max: 500 mW
Supplier Device Package: DO-213AB
Impedance (Max) (Zzt): 22 Ohms
Voltage - Zener (Nom) (Vz): 4.3 V
Operating Temperature: -65°C ~ 175°C
Mounting Type: Surface Mount
Package / Case: DO-213AB, MELF
Tolerance: ±5%
Packaging: Bulk
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CDLL751 CDLL751 Microchip Technology 5907-1n746aur-1n4370aur-datasheet Description: DIODE ZENER 5.1V 500MW DO213AB
Current - Reverse Leakage @ Vr: 5 µA @ 2 V
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 200 mA
Power - Max: 500 mW
Part Status: Active
Supplier Device Package: DO-213AB
Impedance (Max) (Zzt): 17 Ohms
Voltage - Zener (Nom) (Vz): 5.1 V
Operating Temperature: -65°C ~ 175°C
Mounting Type: Surface Mount
Package / Case: DO-213AB, MELF
Tolerance: ±10%
Packaging: Bulk
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CDLL751A CDLL751A Microchip Technology 5907-1n746aur-1n4370aur-datasheet Description: DIODE ZENER 5.1V 500MW DO213AB
Current - Reverse Leakage @ Vr: 5 µA @ 2 V
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 200 mA
Power - Max: 500 mW
Part Status: Active
Supplier Device Package: DO-213AB
Impedance (Max) (Zzt): 17 Ohms
Voltage - Zener (Nom) (Vz): 5.1 V
Operating Temperature: -65°C ~ 175°C
Mounting Type: Surface Mount
Package / Case: DO-213AB, MELF
Tolerance: ±5%
Packaging: Bulk
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CDLL752A CDLL752A Microchip Technology 5907-1n746aur-1n4370aur-datasheet Description: DIODE ZENER 5.6V 500MW DO213AB
Current - Reverse Leakage @ Vr: 5 µA @ 2.5 V
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 200 mA
Power - Max: 500 mW
Supplier Device Package: DO-213AB
Impedance (Max) (Zzt): 11 Ohms
Voltage - Zener (Nom) (Vz): 5.6 V
Operating Temperature: -65°C ~ 175°C
Mounting Type: Surface Mount
Package / Case: DO-213AB, MELF
Tolerance: ±5%
Packaging: Bulk
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CDLL753 CDLL753 Microchip Technology 5907-1n746aur-1n4370aur-datasheet Description: DIODE ZENER 6.2V 500MW DO213AB
Power - Max: 500 mW
Part Status: Active
Supplier Device Package: DO-213AB
Impedance (Max) (Zzt): 7 Ohms
Voltage - Zener (Nom) (Vz): 6.2 V
Operating Temperature: -65°C ~ 175°C
Mounting Type: Surface Mount
Package / Case: DO-213AB, MELF
Tolerance: ±10%
Packaging: Bulk
Current - Reverse Leakage @ Vr: 5 µA @ 3.5 V
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 200 mA
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CDLL753A CDLL753A Microchip Technology 1N746AUR-1N759AUR%2C1N4370AUR-1N4372AUR.pdf Description: DIODE ZENER 6.2V 500MW DO213AB
Current - Reverse Leakage @ Vr: 5 µA @ 3.5 V
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 200 mA
Power - Max: 500 mW
Supplier Device Package: DO-213AB
Impedance (Max) (Zzt): 7 Ohms
Voltage - Zener (Nom) (Vz): 6.2 V
Operating Temperature: -65°C ~ 175°C
Mounting Type: Surface Mount
Package / Case: DO-213AB, MELF
Tolerance: ±5%
Packaging: Bulk
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CDLL755 CDLL755 Microchip Technology 5907-1n746aur-1n4370aur-datasheet Description: DIODE ZENER 7.5V 500MW DO213AB
Current - Reverse Leakage @ Vr: 2 µA @ 5 V
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 200 mA
Power - Max: 500 mW
Supplier Device Package: DO-213AB
Impedance (Max) (Zzt): 6 Ohms
Voltage - Zener (Nom) (Vz): 7.5 V
Operating Temperature: -65°C ~ 175°C
Mounting Type: Surface Mount
Package / Case: DO-213AB, MELF
Tolerance: ±10%
Packaging: Bulk
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CDLL914 Microchip Technology 125210-lds-0279-1-datasheet Description: DIODE GEN PURP 75V 200MA DO213AA
Current - Reverse Leakage @ Vr: 500 nA @ 75 V
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 50 mA
Voltage - DC Reverse (Vr) (Max): 75 V
Operating Temperature - Junction: -65°C ~ 175°C
Supplier Device Package: DO-213AA
Current - Average Rectified (Io): 200mA
Capacitance @ Vr, F: 4pF @ 0V, 1MHz
Technology: Standard
Reverse Recovery Time (trr): 20 ns
Speed: Small Signal =< 200mA (Io), Any Speed
Mounting Type: Surface Mount
Package / Case: DO-213AA
Packaging: Bulk
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CDLL957A CDLL957A Microchip Technology 5917-1n962bur-datasheet Description: DIODE ZENER 6.8V 500MW DO213AB
Current - Reverse Leakage @ Vr: 5 µA @ 5.2 V
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 200 mA
Power - Max: 500 mW
Part Status: Active
Supplier Device Package: DO-213AB
Impedance (Max) (Zzt): 4.5 Ohms
Voltage - Zener (Nom) (Vz): 6.8 V
Operating Temperature: -65°C ~ 175°C
Mounting Type: Surface Mount
Package / Case: DO-213AB, MELF
Tolerance: ±10%
Packaging: Bulk
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CDLL957B CDLL957B Microchip Technology 5917-1n962bur-datasheet Description: DIODE ZENER 6.8V 500MW DO213AB
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 200 mA
Power - Max: 500 mW
Supplier Device Package: DO-213AB
Impedance (Max) (Zzt): 4.5 Ohms
Voltage - Zener (Nom) (Vz): 6.8 V
Operating Temperature: -65°C ~ 175°C
Mounting Type: Surface Mount
Package / Case: DO-213AB, MELF
Tolerance: ±5%
Packaging: Bulk
Current - Reverse Leakage @ Vr: 5 µA @ 5.2 V
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CDLL958 CDLL958 Microchip Technology 5917-1n962bur-datasheet Description: DIODE ZENER 7.5V 500MW DO213AB
Current - Reverse Leakage @ Vr: 5 µA @ 5.7 V
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 200 mA
Power - Max: 500 mW
Supplier Device Package: DO-213AB
Impedance (Max) (Zzt): 5.5 Ohms
Voltage - Zener (Nom) (Vz): 7.5 V
Operating Temperature: -65°C ~ 175°C
Mounting Type: Surface Mount
Package / Case: DO-213AB, MELF
Tolerance: ±20%
Packaging: Bulk
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CDLL958B CDLL958B Microchip Technology 5917-1n962bur-datasheet Description: DIODE ZENER 7.5V 500MW DO213AB
Current - Reverse Leakage @ Vr: 5 µA @ 5.7 V
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 200 mA
Power - Max: 500 mW
Supplier Device Package: DO-213AB
Impedance (Max) (Zzt): 5.5 Ohms
Voltage - Zener (Nom) (Vz): 7.5 V
Operating Temperature: -65°C ~ 175°C
Mounting Type: Surface Mount
Package / Case: DO-213AB, MELF
Tolerance: ±5%
Packaging: Bulk
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CDLL959 CDLL959 Microchip Technology 5917-1n962bur-datasheet Description: DIODE ZENER 8.2V 500MW DO213AB
Current - Reverse Leakage @ Vr: 5 µA @ 6.2 V
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 200 mA
Power - Max: 500 mW
Supplier Device Package: DO-213AB
Impedance (Max) (Zzt): 6.5 Ohms
Voltage - Zener (Nom) (Vz): 8.2 V
Operating Temperature: -65°C ~ 175°C
Mounting Type: Surface Mount
Package / Case: DO-213AB, MELF
Tolerance: ±20%
Packaging: Bulk
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CDLL960B CDLL960B Microchip Technology 5917-1n962bur-datasheet Description: DIODE ZENER 9.1V 500MW DO213AB
Current - Reverse Leakage @ Vr: 5 µA @ 6.9 V
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 200 mA
Power - Max: 500 mW
Supplier Device Package: DO-213AB
Impedance (Max) (Zzt): 7.5 Ohms
Voltage - Zener (Nom) (Vz): 9.1 V
Operating Temperature: -65°C ~ 175°C
Mounting Type: Surface Mount
Package / Case: DO-213AB, MELF
Tolerance: ±5%
Packaging: Bulk
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CDLL961 CDLL961 Microchip Technology 5917-1n962bur-datasheet Description: DIODE ZENER 10V 500MW DO213AB
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CDLL961A CDLL961A Microchip Technology 5917-1n962bur-datasheet Description: DIODE ZENER 10V 500MW DO213AB
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CDLL961B CDLL961B Microchip Technology 5917-1n962bur-datasheet Description: DIODE ZENER 10V 500MW DO213AB
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CDLL963A CDLL963A Microchip Technology 5917-1n962bur-datasheet Description: DIODE ZENER 12V 500MW DO213AB
Current - Reverse Leakage @ Vr: 1 µA @ 9.1 V
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 200 mA
Power - Max: 500 mW
Part Status: Active
Supplier Device Package: DO-213AB
Impedance (Max) (Zzt): 11.5 Ohms
Voltage - Zener (Nom) (Vz): 12 V
Operating Temperature: -65°C ~ 175°C
Mounting Type: Surface Mount
Package / Case: DO-213AB, MELF
Tolerance: ±10%
Packaging: Bulk
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CDLL965A CDLL965A Microchip Technology 5917-1n962bur-datasheet Description: DIODE ZENER 15V 500MW DO213AB
Current - Reverse Leakage @ Vr: 500 nA @ 11 V
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 200 mA
Power - Max: 500 mW
Supplier Device Package: DO-213AB
Impedance (Max) (Zzt): 16 Ohms
Voltage - Zener (Nom) (Vz): 15 V
Operating Temperature: -65°C ~ 175°C
Mounting Type: Surface Mount
Package / Case: DO-213AB, MELF
Tolerance: ±10%
Packaging: Bulk
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CDLL965B CDLL965B Microchip Technology 1N957BUR-1-1N992BUR-1.pdf Description: DIODE ZENER 15V 500MW DO213AB
Packaging: Bulk
Tolerance: ±5%
Package / Case: DO-213AB, MELF
Mounting Type: Surface Mount
Operating Temperature: -65°C ~ 175°C
Voltage - Zener (Nom) (Vz): 15 V
Impedance (Max) (Zzt): 16 Ohms
Supplier Device Package: DO-213AB
Part Status: Active
Power - Max: 500 mW
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 200 mA
Current - Reverse Leakage @ Vr: 500 nA @ 11 V
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CDLL966A CDLL966A Microchip Technology 5917-1n962bur-datasheet Description: DIODE ZENER 16V 500MW DO213AB
Current - Reverse Leakage @ Vr: 500 nA @ 12 V
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 200 mA
Power - Max: 500 mW
Supplier Device Package: DO-213AB
Impedance (Max) (Zzt): 17 Ohms
Voltage - Zener (Nom) (Vz): 16 V
Operating Temperature: -65°C ~ 175°C
Mounting Type: Surface Mount
Package / Case: DO-213AB, MELF
Tolerance: ±10%
Packaging: Bulk
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CDLL969B CDLL969B Microchip Technology 5917-1n962bur-datasheet Description: DIODE ZENER 22V 500MW DO213AB
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CDLL975 CDLL975 Microchip Technology 5917-1n962bur-datasheet Description: DIODE ZENER 39V 500MW DO213AB
Current - Reverse Leakage @ Vr: 500 nA @ 30 V
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 200 mA
Power - Max: 500 mW
Supplier Device Package: DO-213AB
Impedance (Max) (Zzt): 90 Ohms
Voltage - Zener (Nom) (Vz): 39 V
Operating Temperature: -65°C ~ 175°C
Mounting Type: Surface Mount
Package / Case: DO-213AB, MELF
Tolerance: ±20%
Packaging: Bulk
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CDLL975A CDLL975A Microchip Technology 5917-1n962bur-datasheet Description: DIODE ZENER 39V 500MW DO213AB
Current - Reverse Leakage @ Vr: 500 nA @ 30 V
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 200 mA
Power - Max: 500 mW
Supplier Device Package: DO-213AB
Impedance (Max) (Zzt): 90 Ohms
Voltage - Zener (Nom) (Vz): 39 V
Operating Temperature: -65°C ~ 175°C
Mounting Type: Surface Mount
Package / Case: DO-213AB, MELF
Tolerance: ±10%
Packaging: Bulk
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CDLL975B CDLL975B Microchip Technology 5917-1n962bur-datasheet Description: DIODE ZENER 39V 500MW DO213AB
Current - Reverse Leakage @ Vr: 500 nA @ 30 V
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 200 mA
Power - Max: 500 mW
Supplier Device Package: DO-213AB
Impedance (Max) (Zzt): 90 Ohms
Voltage - Zener (Nom) (Vz): 39 V
Operating Temperature: -65°C ~ 175°C
Mounting Type: Surface Mount
Package / Case: DO-213AB, MELF
Tolerance: ±5%
Packaging: Bulk
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CDLL982 CDLL982 Microchip Technology 5917-1n962bur-datasheet Description: DIODE ZENER 75V 500MW DO213AB
Current - Reverse Leakage @ Vr: 500 nA @ 56 V
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 200 mA
Power - Max: 500 mW
Supplier Device Package: DO-213AB
Impedance (Max) (Zzt): 270 Ohms
Voltage - Zener (Nom) (Vz): 75 V
Operating Temperature: -65°C ~ 175°C
Mounting Type: Surface Mount
Package / Case: DO-213AB, MELF
Tolerance: ±20%
Packaging: Bulk
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CDLL982A CDLL982A Microchip Technology 5917-1n962bur-datasheet Description: DIODE ZENER 75V 500MW DO213AB
Current - Reverse Leakage @ Vr: 500 nA @ 56 V
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 200 mA
Power - Max: 500 mW
Supplier Device Package: DO-213AB
Impedance (Max) (Zzt): 270 Ohms
Voltage - Zener (Nom) (Vz): 75 V
Operating Temperature: -65°C ~ 175°C
Mounting Type: Surface Mount
Package / Case: DO-213AB, MELF
Tolerance: ±10%
Packaging: Bulk
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CDLL982B CDLL982B Microchip Technology 5917-1n962bur-datasheet Description: DIODE ZENER 75V 500MW DO213AB
Current - Reverse Leakage @ Vr: 500 nA @ 56 V
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 200 mA
Power - Max: 500 mW
Supplier Device Package: DO-213AB
Impedance (Max) (Zzt): 270 Ohms
Voltage - Zener (Nom) (Vz): 75 V
Operating Temperature: -65°C ~ 175°C
Mounting Type: Surface Mount
Package / Case: DO-213AB, MELF
Tolerance: ±5%
Packaging: Bulk
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CDLL990B CDLL990B Microchip Technology Description: DIODE ZENER 160V 500MW DO213AA
Mounting Type: Surface Mount
Package / Case: DO-213AA (Glass)
Tolerance: ±5%
Packaging: Bulk
Power - Max: 500 mW
Supplier Device Package: DO-213AA
Impedance (Max) (Zzt): 1700 Ohms
Voltage - Zener (Nom) (Vz): 160 V
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CDLL991B CDLL991B Microchip Technology Description: DIODE ZENER 180V 500MW DO213AA
Power - Max: 500 mW
Supplier Device Package: DO-213AA
Impedance (Max) (Zzt): 2200 Ohms
Voltage - Zener (Nom) (Vz): 180 V
Mounting Type: Surface Mount
Package / Case: DO-213AA
Tolerance: ±5%
Packaging: Bulk
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CDLL992B CDLL992B Microchip Technology Description: DIODE ZENER 200V 500MW DO213AA
Power - Max: 500 mW
Supplier Device Package: DO-213AA
Impedance (Max) (Zzt): 2500 Ohms
Voltage - Zener (Nom) (Vz): 200 V
Mounting Type: Surface Mount
Package / Case: DO-213AA
Tolerance: ±5%
Packaging: Bulk
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JAN1N3957 JAN1N3957 Microchip Technology 123512-lds-0190-datasheet Description: DIODE GEN PURP 1KV 1A AXIAL
Qualification: MIL-PRF-19500/228
Current - Reverse Leakage @ Vr: 100 µA @ 300 V
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 1 A
Voltage - DC Reverse (Vr) (Max): 1000 V
Grade: Military
Operating Temperature - Junction: -65°C ~ 175°C
Supplier Device Package: A, Axial
Current - Average Rectified (Io): 1A
Technology: Standard
Speed: Standard Recovery >500ns, > 200mA (Io)
Mounting Type: Through Hole
Package / Case: A, Axial
Packaging: Bulk
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JAN1N4942 JAN1N4942 Microchip Technology 129281-lds-0295-datasheet Description: DIODE STANDARD 200V 1A AXIAL
Current - Reverse Leakage @ Vr: 1 µA @ 200 V
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 1 A
Voltage - DC Reverse (Vr) (Max): 200 V
Operating Temperature - Junction: -65°C ~ 175°C
Supplier Device Package: A, Axial
Current - Average Rectified (Io): 1A
Technology: Standard
Reverse Recovery Time (trr): 150 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Through Hole
Package / Case: A, Axial
Packaging: Bulk
Qualification: MIL-PRF-19500/359
Grade: Military
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JAN1N4944 JAN1N4944 Microchip Technology 129281-lds-0295-datasheet Description: DIODE GEN PURP 400V 1A AXIAL
Current - Reverse Leakage @ Vr: 1 µA @ 400 V
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 1 A
Voltage - DC Reverse (Vr) (Max): 400 V
Part Status: Active
Operating Temperature - Junction: -65°C ~ 175°C
Supplier Device Package: A, Axial
Current - Average Rectified (Io): 1A
Technology: Standard
Reverse Recovery Time (trr): 150 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Through Hole
Package / Case: A, Axial
Packaging: Bulk
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JAN1N4960US JAN1N4960US Microchip Technology 11059-sd44a-datasheet Description: DIODE ZENER 12V 5W D5B
Qualification: MIL-PRF-19500/356
Current - Reverse Leakage @ Vr: 10 µA @ 9.1 V
Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 1 A
Power - Max: 5 W
Grade: Military
Supplier Device Package: D-5B
Impedance (Max) (Zzt): 2.5 Ohms
Voltage - Zener (Nom) (Vz): 12 V
Operating Temperature: -65°C ~ 175°C
Mounting Type: Surface Mount
Package / Case: SQ-MELF, E
Tolerance: ±5%
Packaging: Bulk
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JAN1N4980 JAN1N4980 Microchip Technology 10913-sa5-37-datasheet Description: DIODE ZENER 82V 5W AXIAL
Current - Reverse Leakage @ Vr: 2 µA @ 62.2 V
Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 1 A
Power - Max: 5 W
Grade: Military
Impedance (Max) (Zzt): 80 Ohms
Voltage - Zener (Nom) (Vz): 82 V
Operating Temperature: -65°C ~ 175°C
Mounting Type: Through Hole
Package / Case: E, Axial
Tolerance: ±5%
Packaging: Bulk
Qualification: MIL-PRF-19500/356
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JAN1N4980US JAN1N4980US Microchip Technology 11059-sd44a-datasheet Description: DIODE ZENER 82V 5W D5B
Qualification: MIL-PRF-19500/356
Current - Reverse Leakage @ Vr: 2 µA @ 62.2 V
Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 1 A
Power - Max: 5 W
Grade: Military
Supplier Device Package: D-5B
Impedance (Max) (Zzt): 80 Ohms
Voltage - Zener (Nom) (Vz): 82 V
Operating Temperature: -65°C ~ 175°C
Mounting Type: Surface Mount
Package / Case: SQ-MELF, E
Tolerance: ±5%
Packaging: Bulk
Produkt ist nicht verfügbar
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JAN1N5415 JAN1N5415 Microchip Technology 124360-lds-0231-datasheet Description: DIODE GEN PURP 50V 3A AXIAL
Qualification: MIL-PRF-19500/411
Current - Reverse Leakage @ Vr: 1 µA @ 50 V
Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 9 A
Voltage - DC Reverse (Vr) (Max): 50 V
Grade: Military
Operating Temperature - Junction: -65°C ~ 175°C
Supplier Device Package: B, Axial
Current - Average Rectified (Io): 3A
Technology: Standard
Reverse Recovery Time (trr): 150 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Through Hole
Package / Case: B, Axial
Packaging: Bulk
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JAN1N5415US Microchip Technology 11075-lds-0231-1-datasheet Description: DIODE GEN PURP 50V 3A AXIAL
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JAN1N5416 JAN1N5416 Microchip Technology LDS-0231%2C+1N5415+thru+1N5420%2C+MIL-PRF-19500-411.pdf Description: DIODE STANDARD 100V 3A B AXIAL
Qualification: MIL-PRF-19500/411
Current - Reverse Leakage @ Vr: 1 µA @ 100 V
Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 9 A
Voltage - DC Reverse (Vr) (Max): 100 V
Grade: Military
Operating Temperature - Junction: -65°C ~ 175°C
Supplier Device Package: B, Axial
Current - Average Rectified (Io): 3A
Technology: Standard
Reverse Recovery Time (trr): 150 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Through Hole
Package / Case: B, Axial
Packaging: Bulk
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JAN1N5416US JAN1N5416US Microchip Technology LDS-0231-1%2C+1N5415US+thru1N5420US%2C+MIL-PRF-19500-411.pdf Description: DIODE STANDARD 100V 3A B AXIAL
Qualification: MIL-PRF-19500/411
Current - Reverse Leakage @ Vr: 1 µA @ 100 V
Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 9 A
Voltage - DC Reverse (Vr) (Max): 100 V
Grade: Military
Operating Temperature - Junction: -65°C ~ 175°C
Supplier Device Package: B, Axial
Current - Average Rectified (Io): 3A
Technology: Standard
Reverse Recovery Time (trr): 150 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Through Hole
Package / Case: B, Axial
Packaging: Bulk
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JAN1N5417 JAN1N5417 Microchip Technology 124360-lds-0231-datasheet Description: DIODE STANDARD 200V 3A B AXIAL
Qualification: MIL-PRF-19500/411
Current - Reverse Leakage @ Vr: 1 µA @ 200 V
Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 9 A
Voltage - DC Reverse (Vr) (Max): 200 V
Grade: Military
Operating Temperature - Junction: -65°C ~ 175°C
Supplier Device Package: B, Axial
Current - Average Rectified (Io): 3A
Technology: Standard
Reverse Recovery Time (trr): 150 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Through Hole
Package / Case: B, Axial
Packaging: Bulk
Produkt ist nicht verfügbar
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JAN1N5417US JAN1N5417US Microchip Technology 11075-lds-0231-1-datasheet Description: DIODE STANDARD 200V 3A B SQMELF
Qualification: MIL-PRF-19500/411
Current - Reverse Leakage @ Vr: 1 µA @ 200 V
Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 9 A
Voltage - DC Reverse (Vr) (Max): 200 V
Grade: Military
Operating Temperature - Junction: -65°C ~ 175°C
Supplier Device Package: B, SQ-MELF
Current - Average Rectified (Io): 3A
Technology: Standard
Reverse Recovery Time (trr): 150 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: SQ-MELF, B
Packaging: Bulk
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JAN1N5418 JAN1N5418 Microchip Technology 124360-lds-0231-datasheet Description: DIODE GEN PURP 400V 3A AXIAL
Current - Reverse Leakage @ Vr: 1 µA @ 400 V
Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 9 A
Voltage - DC Reverse (Vr) (Max): 400 V
Part Status: Active
Operating Temperature - Junction: -65°C ~ 175°C
Supplier Device Package: B, Axial
Current - Average Rectified (Io): 3A
Technology: Standard
Reverse Recovery Time (trr): 150 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Through Hole
Package / Case: B, Axial
Packaging: Bulk
Qualification: MIL-PRF-19500/411
Grade: Military
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JAN1N5418US JAN1N5418US Microchip Technology 11075-lds-0231-1-datasheet Description: DIODE GEN PURP 400V 3A D-5B
Qualification: MIL-PRF-19500/411
Technology: Standard
Reverse Recovery Time (trr): 150 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: SQ-MELF, E
Packaging: Bulk
Current - Reverse Leakage @ Vr: 1 µA @ 400 V
Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 9 A
Voltage - DC Reverse (Vr) (Max): 400 V
Part Status: Active
Operating Temperature - Junction: -65°C ~ 175°C
Supplier Device Package: D-5B
Current - Average Rectified (Io): 3A
Grade: Military
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JAN1N5419 JAN1N5419 Microchip Technology LDS-0231%2C+1N5415+thru+1N5420%2C+MIL-PRF-19500-411.pdf Description: DIODE STANDARD 500V 3A B AXIAL
Qualification: MIL-PRF-19500/411
Current - Reverse Leakage @ Vr: 1 µA @ 500 V
Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 9 A
Voltage - DC Reverse (Vr) (Max): 500 V
Grade: Military
Operating Temperature - Junction: -65°C ~ 175°C
Supplier Device Package: B, Axial
Current - Average Rectified (Io): 3A
Technology: Standard
Reverse Recovery Time (trr): 250 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Through Hole
Package / Case: B, Axial
Packaging: Bulk
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JAN1N5419US JAN1N5419US Microchip Technology LDS-0231-1%2C+1N5415US+thru1N5420US%2C+MIL-PRF-19500-411.pdf Description: DIODE STANDARD 500V 3A D5B
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: SQ-MELF, E
Packaging: Bulk
Qualification: MIL-PRF-19500/411
Current - Reverse Leakage @ Vr: 1 µA @ 500 V
Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 9 A
Voltage - DC Reverse (Vr) (Max): 500 V
Grade: Military
Operating Temperature - Junction: -65°C ~ 175°C
Supplier Device Package: D-5B
Current - Average Rectified (Io): 3A
Technology: Standard
Reverse Recovery Time (trr): 250 ns
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JAN1N5420 JAN1N5420 Microchip Technology 124360-lds-0231-datasheet Description: DIODE GEN PURP 600V 3A B AXIAL
Technology: Standard
Reverse Recovery Time (trr): 400 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Through Hole
Package / Case: B, Axial
Packaging: Bulk
Qualification: MIL-PRF-19500/411
Grade: Military
Current - Reverse Leakage @ Vr: 1 µA @ 600 V
Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 9 A
Voltage - DC Reverse (Vr) (Max): 600 V
Operating Temperature - Junction: -65°C ~ 175°C
Supplier Device Package: B, Axial
Current - Average Rectified (Io): 3A
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JAN1N5420US JAN1N5420US Microchip Technology 11075-lds-0231-1-datasheet Description: DIODE GEN PURP 600V 3A D-5B
Qualification: MIL-PRF-19500/411
Grade: Military
Current - Reverse Leakage @ Vr: 1 µA @ 600 V
Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 9 A
Voltage - DC Reverse (Vr) (Max): 600 V
Operating Temperature - Junction: -65°C ~ 175°C
Supplier Device Package: D-5B
Current - Average Rectified (Io): 3A
Technology: Standard
Reverse Recovery Time (trr): 400 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: SQ-MELF, E
Packaging: Bulk
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JAN1N5550 JAN1N5550 Microchip Technology LDS-0230%2C+1N5550+thru+1N5554%2C+MIL-PRF-19500-420.pdf Description: DIODE STANDARD 200V 3A B AXIAL
Packaging: Bulk
Package / Case: B, Axial
Mounting Type: Through Hole
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): 2 µs
Technology: Standard
Current - Average Rectified (Io): 3A
Supplier Device Package: B, Axial
Operating Temperature - Junction: -65°C ~ 175°C
Grade: Military
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 9 A
Current - Reverse Leakage @ Vr: 1 µA @ 200 V
Qualification: MIL-PRF-19500/420
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JAN1N5551 JAN1N5551 Microchip Technology LDS-0230%2C+1N5550+thru+1N5554%2C+MIL-PRF-19500-420.pdf Description: DIODE STANDARD 400V 3A B AXIAL
Packaging: Bulk
Package / Case: B, Axial
Mounting Type: Through Hole
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): 2 µs
Technology: Standard
Current - Average Rectified (Io): 3A
Supplier Device Package: B, Axial
Operating Temperature - Junction: -65°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 400 V
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 9 A
Current - Reverse Leakage @ Vr: 1 µA @ 400 V
Grade: Military
Qualification: MIL-PRF-19500/420
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JAN1N5552 JAN1N5552 Microchip Technology LDS-0230%2C+1N5550+thru+1N5554%2C+MIL-PRF-19500-420.pdf Description: DIODE STANDARD 600V 3A B AXIAL
Packaging: Bulk
Package / Case: B, Axial
Mounting Type: Through Hole
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): 2 µs
Technology: Standard
Current - Average Rectified (Io): 3A
Supplier Device Package: B, Axial
Operating Temperature - Junction: -65°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 9 A
Current - Reverse Leakage @ Vr: 1 µA @ 600 V
Grade: Military
Qualification: MIL-PRF-19500/420
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JAN1N5553 JAN1N5553 Microchip Technology 11519-lds-0230-datasheet Description: DIODE GEN PURP 800V 3A AXIAL
Current - Reverse Leakage @ Vr: 1 µA @ 800 V
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 9 A
Voltage - DC Reverse (Vr) (Max): 800 V
Operating Temperature - Junction: -65°C ~ 175°C
Supplier Device Package: B, Axial
Current - Average Rectified (Io): 3A
Technology: Standard
Reverse Recovery Time (trr): 2 µs
Speed: Standard Recovery >500ns, > 200mA (Io)
Mounting Type: Through Hole
Package / Case: B, Axial
Packaging: Bulk
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JAN1N5554 JAN1N5554 Microchip Technology 11519-lds-0230-datasheet Description: DIODE GEN PURP 1KV 3A AXIAL
Qualification: MIL-PRF-19500/420
Current - Reverse Leakage @ Vr: 1 µA @ 1000 V
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 9 A
Voltage - DC Reverse (Vr) (Max): 1000 V
Grade: Military
Operating Temperature - Junction: -65°C ~ 175°C
Supplier Device Package: B, Axial
Current - Average Rectified (Io): 3A
Technology: Standard
Reverse Recovery Time (trr): 2 µs
Speed: Standard Recovery >500ns, > 200mA (Io)
Mounting Type: Through Hole
Package / Case: B, Axial
Packaging: Bulk
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JAN1N5804 JAN1N5804 Microchip Technology 1N5802%2C1N5804%2C1N5806.pdf Description: DIODE STANDARD 100V 2.5AXIAL
Packaging: Bulk
Package / Case: A, Axial
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 25 ns
Technology: Standard
Capacitance @ Vr, F: 25pF @ 10V, 1MHz
Current - Average Rectified (Io): 2.5A
Supplier Device Package: A, Axial
Operating Temperature - Junction: -65°C ~ 175°C
Grade: Military
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 975 mV @ 2.5 A
Current - Reverse Leakage @ Vr: 1 µA @ 100 V
Qualification: MIL-PRF-19500/477
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JAN1N5804US JAN1N5804US Microchip Technology LDS-0211+%282%29%2C+1N5802-1N5804-1N5806%2C+MIL-PRF-19500-477.pdf Description: DIODE STANDARD 100V 2.5A D5A
Packaging: Bulk
Package / Case: SQ-MELF, A
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 25 ns
Technology: Standard
Capacitance @ Vr, F: 25pF @ 10V, 1MHz
Current - Average Rectified (Io): 2.5A
Supplier Device Package: D-5A
Operating Temperature - Junction: -65°C ~ 175°C
Grade: Military
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 975 mV @ 2.5 A
Current - Reverse Leakage @ Vr: 1 µA @ 100 V
Qualification: MIL-PRF-19500/477
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JAN1N5806 JAN1N5806 Microchip Technology Description: DIODE GEN PURP 150V 2.5A AXIAL
Qualification: MIL-PRF-19500/477
Current - Reverse Leakage @ Vr: 1 µA @ 150 V
Voltage - Forward (Vf) (Max) @ If: 975 mV @ 2.5 A
Voltage - DC Reverse (Vr) (Max): 150 V
Grade: Military
Operating Temperature - Junction: -65°C ~ 175°C
Supplier Device Package: A, Axial
Current - Average Rectified (Io): 2.5A
Capacitance @ Vr, F: 25pF @ 10V, 1MHz
Technology: Standard
Reverse Recovery Time (trr): 25 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Through Hole
Package / Case: A, Axial
Packaging: Bulk
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JAN1N5811 JAN1N5811 Microchip Technology LDS-0168-1%2C+1N5807US-1N5809US-1N5811US%28URS%29%2C+MIL-PRF-19500-477.pdf Description: DIODE STANDARD 150V 3A B AXIAL
Qualification: MIL-PRF-19500/477
Grade: Military
Capacitance @ Vr, F: 60pF @ 10V, 1MHz
Technology: Standard
Reverse Recovery Time (trr): 30 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Through Hole
Package / Case: B, Axial
Packaging: Bulk
Current - Reverse Leakage @ Vr: 5 µA @ 150 V
Voltage - Forward (Vf) (Max) @ If: 875 mV @ 4 A
Voltage - DC Reverse (Vr) (Max): 150 V
Part Status: Active
Operating Temperature - Junction: -65°C ~ 175°C
Supplier Device Package: B, Axial
Current - Average Rectified (Io): 6A
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JAN1N5811US JAN1N5811US Microchip Technology 124792-lds-0168-1-datasheet Description: DIODE GEN PURP 150V 6A B SQ-MELF
Qualification: MIL-PRF-19500/477
Grade: Military
Current - Reverse Leakage @ Vr: 5 µA @ 150 V
Voltage - Forward (Vf) (Max) @ If: 875 mV @ 4 A
Voltage - DC Reverse (Vr) (Max): 150 V
Part Status: Active
Operating Temperature - Junction: -65°C ~ 175°C
Supplier Device Package: B, SQ-MELF
Current - Average Rectified (Io): 6A
Capacitance @ Vr, F: 60pF @ 10V, 1MHz
Technology: Standard
Reverse Recovery Time (trr): 30 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: SQ-MELF, B
Packaging: Bulk
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JAN1N6118A JAN1N6118A Microchip Technology lds-0277.pdf Description: TVS DIODE 25.1VWM 45.7V AXIAL
Qualification: MIL-PRF-19500/516
Grade: Military
Part Status: Active
Power Line Protection: No
Power - Peak Pulse: 500W
Voltage - Clamping (Max) @ Ipp: 45.7V
Voltage - Breakdown (Min): 31.4V
Bidirectional Channels: 1
Supplier Device Package: B, Axial
Voltage - Reverse Standoff (Typ): 25.1V
Current - Peak Pulse (10/1000µs): 10.9A
Applications: General Purpose
Operating Temperature: -55°C ~ 175°C (TJ)
Type: Zener
Mounting Type: Through Hole
Package / Case: B, Axial
Packaging: Bulk
Produkt ist nicht verfügbar
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CDLL749A 5907-1n746aur-1n4370aur-datasheet
CDLL749A
Hersteller: Microchip Technology
Description: DIODE ZENER 4.3V 500MW DO213AB
Current - Reverse Leakage @ Vr: 2 µA @ 1 V
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 200 mA
Power - Max: 500 mW
Supplier Device Package: DO-213AB
Impedance (Max) (Zzt): 22 Ohms
Voltage - Zener (Nom) (Vz): 4.3 V
Operating Temperature: -65°C ~ 175°C
Mounting Type: Surface Mount
Package / Case: DO-213AB, MELF
Tolerance: ±5%
Packaging: Bulk
Produkt ist nicht verfügbar
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CDLL751 5907-1n746aur-1n4370aur-datasheet
CDLL751
Hersteller: Microchip Technology
Description: DIODE ZENER 5.1V 500MW DO213AB
Current - Reverse Leakage @ Vr: 5 µA @ 2 V
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 200 mA
Power - Max: 500 mW
Part Status: Active
Supplier Device Package: DO-213AB
Impedance (Max) (Zzt): 17 Ohms
Voltage - Zener (Nom) (Vz): 5.1 V
Operating Temperature: -65°C ~ 175°C
Mounting Type: Surface Mount
Package / Case: DO-213AB, MELF
Tolerance: ±10%
Packaging: Bulk
Produkt ist nicht verfügbar
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CDLL751A 5907-1n746aur-1n4370aur-datasheet
CDLL751A
Hersteller: Microchip Technology
Description: DIODE ZENER 5.1V 500MW DO213AB
Current - Reverse Leakage @ Vr: 5 µA @ 2 V
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 200 mA
Power - Max: 500 mW
Part Status: Active
Supplier Device Package: DO-213AB
Impedance (Max) (Zzt): 17 Ohms
Voltage - Zener (Nom) (Vz): 5.1 V
Operating Temperature: -65°C ~ 175°C
Mounting Type: Surface Mount
Package / Case: DO-213AB, MELF
Tolerance: ±5%
Packaging: Bulk
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CDLL752A 5907-1n746aur-1n4370aur-datasheet
CDLL752A
Hersteller: Microchip Technology
Description: DIODE ZENER 5.6V 500MW DO213AB
Current - Reverse Leakage @ Vr: 5 µA @ 2.5 V
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 200 mA
Power - Max: 500 mW
Supplier Device Package: DO-213AB
Impedance (Max) (Zzt): 11 Ohms
Voltage - Zener (Nom) (Vz): 5.6 V
Operating Temperature: -65°C ~ 175°C
Mounting Type: Surface Mount
Package / Case: DO-213AB, MELF
Tolerance: ±5%
Packaging: Bulk
Produkt ist nicht verfügbar
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CDLL753 5907-1n746aur-1n4370aur-datasheet
CDLL753
Hersteller: Microchip Technology
Description: DIODE ZENER 6.2V 500MW DO213AB
Power - Max: 500 mW
Part Status: Active
Supplier Device Package: DO-213AB
Impedance (Max) (Zzt): 7 Ohms
Voltage - Zener (Nom) (Vz): 6.2 V
Operating Temperature: -65°C ~ 175°C
Mounting Type: Surface Mount
Package / Case: DO-213AB, MELF
Tolerance: ±10%
Packaging: Bulk
Current - Reverse Leakage @ Vr: 5 µA @ 3.5 V
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 200 mA
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CDLL753A 1N746AUR-1N759AUR%2C1N4370AUR-1N4372AUR.pdf
CDLL753A
Hersteller: Microchip Technology
Description: DIODE ZENER 6.2V 500MW DO213AB
Current - Reverse Leakage @ Vr: 5 µA @ 3.5 V
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 200 mA
Power - Max: 500 mW
Supplier Device Package: DO-213AB
Impedance (Max) (Zzt): 7 Ohms
Voltage - Zener (Nom) (Vz): 6.2 V
Operating Temperature: -65°C ~ 175°C
Mounting Type: Surface Mount
Package / Case: DO-213AB, MELF
Tolerance: ±5%
Packaging: Bulk
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100+5.52 EUR
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CDLL755 5907-1n746aur-1n4370aur-datasheet
CDLL755
Hersteller: Microchip Technology
Description: DIODE ZENER 7.5V 500MW DO213AB
Current - Reverse Leakage @ Vr: 2 µA @ 5 V
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 200 mA
Power - Max: 500 mW
Supplier Device Package: DO-213AB
Impedance (Max) (Zzt): 6 Ohms
Voltage - Zener (Nom) (Vz): 7.5 V
Operating Temperature: -65°C ~ 175°C
Mounting Type: Surface Mount
Package / Case: DO-213AB, MELF
Tolerance: ±10%
Packaging: Bulk
Produkt ist nicht verfügbar
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CDLL914 125210-lds-0279-1-datasheet
Hersteller: Microchip Technology
Description: DIODE GEN PURP 75V 200MA DO213AA
Current - Reverse Leakage @ Vr: 500 nA @ 75 V
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 50 mA
Voltage - DC Reverse (Vr) (Max): 75 V
Operating Temperature - Junction: -65°C ~ 175°C
Supplier Device Package: DO-213AA
Current - Average Rectified (Io): 200mA
Capacitance @ Vr, F: 4pF @ 0V, 1MHz
Technology: Standard
Reverse Recovery Time (trr): 20 ns
Speed: Small Signal =< 200mA (Io), Any Speed
Mounting Type: Surface Mount
Package / Case: DO-213AA
Packaging: Bulk
Produkt ist nicht verfügbar
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CDLL957A 5917-1n962bur-datasheet
CDLL957A
Hersteller: Microchip Technology
Description: DIODE ZENER 6.8V 500MW DO213AB
Current - Reverse Leakage @ Vr: 5 µA @ 5.2 V
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 200 mA
Power - Max: 500 mW
Part Status: Active
Supplier Device Package: DO-213AB
Impedance (Max) (Zzt): 4.5 Ohms
Voltage - Zener (Nom) (Vz): 6.8 V
Operating Temperature: -65°C ~ 175°C
Mounting Type: Surface Mount
Package / Case: DO-213AB, MELF
Tolerance: ±10%
Packaging: Bulk
Produkt ist nicht verfügbar
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CDLL957B 5917-1n962bur-datasheet
CDLL957B
Hersteller: Microchip Technology
Description: DIODE ZENER 6.8V 500MW DO213AB
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 200 mA
Power - Max: 500 mW
Supplier Device Package: DO-213AB
Impedance (Max) (Zzt): 4.5 Ohms
Voltage - Zener (Nom) (Vz): 6.8 V
Operating Temperature: -65°C ~ 175°C
Mounting Type: Surface Mount
Package / Case: DO-213AB, MELF
Tolerance: ±5%
Packaging: Bulk
Current - Reverse Leakage @ Vr: 5 µA @ 5.2 V
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CDLL958 5917-1n962bur-datasheet
CDLL958
Hersteller: Microchip Technology
Description: DIODE ZENER 7.5V 500MW DO213AB
Current - Reverse Leakage @ Vr: 5 µA @ 5.7 V
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 200 mA
Power - Max: 500 mW
Supplier Device Package: DO-213AB
Impedance (Max) (Zzt): 5.5 Ohms
Voltage - Zener (Nom) (Vz): 7.5 V
Operating Temperature: -65°C ~ 175°C
Mounting Type: Surface Mount
Package / Case: DO-213AB, MELF
Tolerance: ±20%
Packaging: Bulk
Produkt ist nicht verfügbar
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CDLL958B 5917-1n962bur-datasheet
CDLL958B
Hersteller: Microchip Technology
Description: DIODE ZENER 7.5V 500MW DO213AB
Current - Reverse Leakage @ Vr: 5 µA @ 5.7 V
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 200 mA
Power - Max: 500 mW
Supplier Device Package: DO-213AB
Impedance (Max) (Zzt): 5.5 Ohms
Voltage - Zener (Nom) (Vz): 7.5 V
Operating Temperature: -65°C ~ 175°C
Mounting Type: Surface Mount
Package / Case: DO-213AB, MELF
Tolerance: ±5%
Packaging: Bulk
Produkt ist nicht verfügbar
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CDLL959 5917-1n962bur-datasheet
CDLL959
Hersteller: Microchip Technology
Description: DIODE ZENER 8.2V 500MW DO213AB
Current - Reverse Leakage @ Vr: 5 µA @ 6.2 V
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 200 mA
Power - Max: 500 mW
Supplier Device Package: DO-213AB
Impedance (Max) (Zzt): 6.5 Ohms
Voltage - Zener (Nom) (Vz): 8.2 V
Operating Temperature: -65°C ~ 175°C
Mounting Type: Surface Mount
Package / Case: DO-213AB, MELF
Tolerance: ±20%
Packaging: Bulk
Produkt ist nicht verfügbar
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CDLL960B 5917-1n962bur-datasheet
CDLL960B
Hersteller: Microchip Technology
Description: DIODE ZENER 9.1V 500MW DO213AB
Current - Reverse Leakage @ Vr: 5 µA @ 6.9 V
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 200 mA
Power - Max: 500 mW
Supplier Device Package: DO-213AB
Impedance (Max) (Zzt): 7.5 Ohms
Voltage - Zener (Nom) (Vz): 9.1 V
Operating Temperature: -65°C ~ 175°C
Mounting Type: Surface Mount
Package / Case: DO-213AB, MELF
Tolerance: ±5%
Packaging: Bulk
Produkt ist nicht verfügbar
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CDLL961 5917-1n962bur-datasheet
CDLL961
Hersteller: Microchip Technology
Description: DIODE ZENER 10V 500MW DO213AB
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CDLL961A 5917-1n962bur-datasheet
CDLL961A
Hersteller: Microchip Technology
Description: DIODE ZENER 10V 500MW DO213AB
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CDLL961B 5917-1n962bur-datasheet
CDLL961B
Hersteller: Microchip Technology
Description: DIODE ZENER 10V 500MW DO213AB
Produkt ist nicht verfügbar
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CDLL963A 5917-1n962bur-datasheet
CDLL963A
Hersteller: Microchip Technology
Description: DIODE ZENER 12V 500MW DO213AB
Current - Reverse Leakage @ Vr: 1 µA @ 9.1 V
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 200 mA
Power - Max: 500 mW
Part Status: Active
Supplier Device Package: DO-213AB
Impedance (Max) (Zzt): 11.5 Ohms
Voltage - Zener (Nom) (Vz): 12 V
Operating Temperature: -65°C ~ 175°C
Mounting Type: Surface Mount
Package / Case: DO-213AB, MELF
Tolerance: ±10%
Packaging: Bulk
Produkt ist nicht verfügbar
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CDLL965A 5917-1n962bur-datasheet
CDLL965A
Hersteller: Microchip Technology
Description: DIODE ZENER 15V 500MW DO213AB
Current - Reverse Leakage @ Vr: 500 nA @ 11 V
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 200 mA
Power - Max: 500 mW
Supplier Device Package: DO-213AB
Impedance (Max) (Zzt): 16 Ohms
Voltage - Zener (Nom) (Vz): 15 V
Operating Temperature: -65°C ~ 175°C
Mounting Type: Surface Mount
Package / Case: DO-213AB, MELF
Tolerance: ±10%
Packaging: Bulk
Produkt ist nicht verfügbar
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CDLL965B 1N957BUR-1-1N992BUR-1.pdf
CDLL965B
Hersteller: Microchip Technology
Description: DIODE ZENER 15V 500MW DO213AB
Packaging: Bulk
Tolerance: ±5%
Package / Case: DO-213AB, MELF
Mounting Type: Surface Mount
Operating Temperature: -65°C ~ 175°C
Voltage - Zener (Nom) (Vz): 15 V
Impedance (Max) (Zzt): 16 Ohms
Supplier Device Package: DO-213AB
Part Status: Active
Power - Max: 500 mW
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 200 mA
Current - Reverse Leakage @ Vr: 500 nA @ 11 V
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CDLL966A 5917-1n962bur-datasheet
CDLL966A
Hersteller: Microchip Technology
Description: DIODE ZENER 16V 500MW DO213AB
Current - Reverse Leakage @ Vr: 500 nA @ 12 V
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 200 mA
Power - Max: 500 mW
Supplier Device Package: DO-213AB
Impedance (Max) (Zzt): 17 Ohms
Voltage - Zener (Nom) (Vz): 16 V
Operating Temperature: -65°C ~ 175°C
Mounting Type: Surface Mount
Package / Case: DO-213AB, MELF
Tolerance: ±10%
Packaging: Bulk
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CDLL969B 5917-1n962bur-datasheet
CDLL969B
Hersteller: Microchip Technology
Description: DIODE ZENER 22V 500MW DO213AB
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CDLL975 5917-1n962bur-datasheet
CDLL975
Hersteller: Microchip Technology
Description: DIODE ZENER 39V 500MW DO213AB
Current - Reverse Leakage @ Vr: 500 nA @ 30 V
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 200 mA
Power - Max: 500 mW
Supplier Device Package: DO-213AB
Impedance (Max) (Zzt): 90 Ohms
Voltage - Zener (Nom) (Vz): 39 V
Operating Temperature: -65°C ~ 175°C
Mounting Type: Surface Mount
Package / Case: DO-213AB, MELF
Tolerance: ±20%
Packaging: Bulk
Produkt ist nicht verfügbar
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CDLL975A 5917-1n962bur-datasheet
CDLL975A
Hersteller: Microchip Technology
Description: DIODE ZENER 39V 500MW DO213AB
Current - Reverse Leakage @ Vr: 500 nA @ 30 V
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 200 mA
Power - Max: 500 mW
Supplier Device Package: DO-213AB
Impedance (Max) (Zzt): 90 Ohms
Voltage - Zener (Nom) (Vz): 39 V
Operating Temperature: -65°C ~ 175°C
Mounting Type: Surface Mount
Package / Case: DO-213AB, MELF
Tolerance: ±10%
Packaging: Bulk
Produkt ist nicht verfügbar
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CDLL975B 5917-1n962bur-datasheet
CDLL975B
Hersteller: Microchip Technology
Description: DIODE ZENER 39V 500MW DO213AB
Current - Reverse Leakage @ Vr: 500 nA @ 30 V
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 200 mA
Power - Max: 500 mW
Supplier Device Package: DO-213AB
Impedance (Max) (Zzt): 90 Ohms
Voltage - Zener (Nom) (Vz): 39 V
Operating Temperature: -65°C ~ 175°C
Mounting Type: Surface Mount
Package / Case: DO-213AB, MELF
Tolerance: ±5%
Packaging: Bulk
Produkt ist nicht verfügbar
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CDLL982 5917-1n962bur-datasheet
CDLL982
Hersteller: Microchip Technology
Description: DIODE ZENER 75V 500MW DO213AB
Current - Reverse Leakage @ Vr: 500 nA @ 56 V
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 200 mA
Power - Max: 500 mW
Supplier Device Package: DO-213AB
Impedance (Max) (Zzt): 270 Ohms
Voltage - Zener (Nom) (Vz): 75 V
Operating Temperature: -65°C ~ 175°C
Mounting Type: Surface Mount
Package / Case: DO-213AB, MELF
Tolerance: ±20%
Packaging: Bulk
Produkt ist nicht verfügbar
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CDLL982A 5917-1n962bur-datasheet
CDLL982A
Hersteller: Microchip Technology
Description: DIODE ZENER 75V 500MW DO213AB
Current - Reverse Leakage @ Vr: 500 nA @ 56 V
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 200 mA
Power - Max: 500 mW
Supplier Device Package: DO-213AB
Impedance (Max) (Zzt): 270 Ohms
Voltage - Zener (Nom) (Vz): 75 V
Operating Temperature: -65°C ~ 175°C
Mounting Type: Surface Mount
Package / Case: DO-213AB, MELF
Tolerance: ±10%
Packaging: Bulk
Produkt ist nicht verfügbar
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CDLL982B 5917-1n962bur-datasheet
CDLL982B
Hersteller: Microchip Technology
Description: DIODE ZENER 75V 500MW DO213AB
Current - Reverse Leakage @ Vr: 500 nA @ 56 V
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 200 mA
Power - Max: 500 mW
Supplier Device Package: DO-213AB
Impedance (Max) (Zzt): 270 Ohms
Voltage - Zener (Nom) (Vz): 75 V
Operating Temperature: -65°C ~ 175°C
Mounting Type: Surface Mount
Package / Case: DO-213AB, MELF
Tolerance: ±5%
Packaging: Bulk
Produkt ist nicht verfügbar
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CDLL990B
CDLL990B
Hersteller: Microchip Technology
Description: DIODE ZENER 160V 500MW DO213AA
Mounting Type: Surface Mount
Package / Case: DO-213AA (Glass)
Tolerance: ±5%
Packaging: Bulk
Power - Max: 500 mW
Supplier Device Package: DO-213AA
Impedance (Max) (Zzt): 1700 Ohms
Voltage - Zener (Nom) (Vz): 160 V
Produkt ist nicht verfügbar
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CDLL991B
CDLL991B
Hersteller: Microchip Technology
Description: DIODE ZENER 180V 500MW DO213AA
Power - Max: 500 mW
Supplier Device Package: DO-213AA
Impedance (Max) (Zzt): 2200 Ohms
Voltage - Zener (Nom) (Vz): 180 V
Mounting Type: Surface Mount
Package / Case: DO-213AA
Tolerance: ±5%
Packaging: Bulk
Produkt ist nicht verfügbar
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CDLL992B
CDLL992B
Hersteller: Microchip Technology
Description: DIODE ZENER 200V 500MW DO213AA
Power - Max: 500 mW
Supplier Device Package: DO-213AA
Impedance (Max) (Zzt): 2500 Ohms
Voltage - Zener (Nom) (Vz): 200 V
Mounting Type: Surface Mount
Package / Case: DO-213AA
Tolerance: ±5%
Packaging: Bulk
Produkt ist nicht verfügbar
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JAN1N3957 123512-lds-0190-datasheet
JAN1N3957
Hersteller: Microchip Technology
Description: DIODE GEN PURP 1KV 1A AXIAL
Qualification: MIL-PRF-19500/228
Current - Reverse Leakage @ Vr: 100 µA @ 300 V
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 1 A
Voltage - DC Reverse (Vr) (Max): 1000 V
Grade: Military
Operating Temperature - Junction: -65°C ~ 175°C
Supplier Device Package: A, Axial
Current - Average Rectified (Io): 1A
Technology: Standard
Speed: Standard Recovery >500ns, > 200mA (Io)
Mounting Type: Through Hole
Package / Case: A, Axial
Packaging: Bulk
Produkt ist nicht verfügbar
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JAN1N4942 129281-lds-0295-datasheet
JAN1N4942
Hersteller: Microchip Technology
Description: DIODE STANDARD 200V 1A AXIAL
Current - Reverse Leakage @ Vr: 1 µA @ 200 V
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 1 A
Voltage - DC Reverse (Vr) (Max): 200 V
Operating Temperature - Junction: -65°C ~ 175°C
Supplier Device Package: A, Axial
Current - Average Rectified (Io): 1A
Technology: Standard
Reverse Recovery Time (trr): 150 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Through Hole
Package / Case: A, Axial
Packaging: Bulk
Qualification: MIL-PRF-19500/359
Grade: Military
Produkt ist nicht verfügbar
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JAN1N4944 129281-lds-0295-datasheet
JAN1N4944
Hersteller: Microchip Technology
Description: DIODE GEN PURP 400V 1A AXIAL
Current - Reverse Leakage @ Vr: 1 µA @ 400 V
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 1 A
Voltage - DC Reverse (Vr) (Max): 400 V
Part Status: Active
Operating Temperature - Junction: -65°C ~ 175°C
Supplier Device Package: A, Axial
Current - Average Rectified (Io): 1A
Technology: Standard
Reverse Recovery Time (trr): 150 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Through Hole
Package / Case: A, Axial
Packaging: Bulk
Produkt ist nicht verfügbar
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JAN1N4960US 11059-sd44a-datasheet
JAN1N4960US
Hersteller: Microchip Technology
Description: DIODE ZENER 12V 5W D5B
Qualification: MIL-PRF-19500/356
Current - Reverse Leakage @ Vr: 10 µA @ 9.1 V
Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 1 A
Power - Max: 5 W
Grade: Military
Supplier Device Package: D-5B
Impedance (Max) (Zzt): 2.5 Ohms
Voltage - Zener (Nom) (Vz): 12 V
Operating Temperature: -65°C ~ 175°C
Mounting Type: Surface Mount
Package / Case: SQ-MELF, E
Tolerance: ±5%
Packaging: Bulk
Produkt ist nicht verfügbar
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JAN1N4980 10913-sa5-37-datasheet
JAN1N4980
Hersteller: Microchip Technology
Description: DIODE ZENER 82V 5W AXIAL
Current - Reverse Leakage @ Vr: 2 µA @ 62.2 V
Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 1 A
Power - Max: 5 W
Grade: Military
Impedance (Max) (Zzt): 80 Ohms
Voltage - Zener (Nom) (Vz): 82 V
Operating Temperature: -65°C ~ 175°C
Mounting Type: Through Hole
Package / Case: E, Axial
Tolerance: ±5%
Packaging: Bulk
Qualification: MIL-PRF-19500/356
Produkt ist nicht verfügbar
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JAN1N4980US 11059-sd44a-datasheet
JAN1N4980US
Hersteller: Microchip Technology
Description: DIODE ZENER 82V 5W D5B
Qualification: MIL-PRF-19500/356
Current - Reverse Leakage @ Vr: 2 µA @ 62.2 V
Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 1 A
Power - Max: 5 W
Grade: Military
Supplier Device Package: D-5B
Impedance (Max) (Zzt): 80 Ohms
Voltage - Zener (Nom) (Vz): 82 V
Operating Temperature: -65°C ~ 175°C
Mounting Type: Surface Mount
Package / Case: SQ-MELF, E
Tolerance: ±5%
Packaging: Bulk
Produkt ist nicht verfügbar
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JAN1N5415 124360-lds-0231-datasheet
JAN1N5415
Hersteller: Microchip Technology
Description: DIODE GEN PURP 50V 3A AXIAL
Qualification: MIL-PRF-19500/411
Current - Reverse Leakage @ Vr: 1 µA @ 50 V
Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 9 A
Voltage - DC Reverse (Vr) (Max): 50 V
Grade: Military
Operating Temperature - Junction: -65°C ~ 175°C
Supplier Device Package: B, Axial
Current - Average Rectified (Io): 3A
Technology: Standard
Reverse Recovery Time (trr): 150 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Through Hole
Package / Case: B, Axial
Packaging: Bulk
Produkt ist nicht verfügbar
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JAN1N5415US 11075-lds-0231-1-datasheet
Hersteller: Microchip Technology
Description: DIODE GEN PURP 50V 3A AXIAL
Produkt ist nicht verfügbar
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JAN1N5416 LDS-0231%2C+1N5415+thru+1N5420%2C+MIL-PRF-19500-411.pdf
JAN1N5416
Hersteller: Microchip Technology
Description: DIODE STANDARD 100V 3A B AXIAL
Qualification: MIL-PRF-19500/411
Current - Reverse Leakage @ Vr: 1 µA @ 100 V
Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 9 A
Voltage - DC Reverse (Vr) (Max): 100 V
Grade: Military
Operating Temperature - Junction: -65°C ~ 175°C
Supplier Device Package: B, Axial
Current - Average Rectified (Io): 3A
Technology: Standard
Reverse Recovery Time (trr): 150 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Through Hole
Package / Case: B, Axial
Packaging: Bulk
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AnzahlPreis
2+9.42 EUR
100+8.74 EUR
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JAN1N5416US LDS-0231-1%2C+1N5415US+thru1N5420US%2C+MIL-PRF-19500-411.pdf
JAN1N5416US
Hersteller: Microchip Technology
Description: DIODE STANDARD 100V 3A B AXIAL
Qualification: MIL-PRF-19500/411
Current - Reverse Leakage @ Vr: 1 µA @ 100 V
Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 9 A
Voltage - DC Reverse (Vr) (Max): 100 V
Grade: Military
Operating Temperature - Junction: -65°C ~ 175°C
Supplier Device Package: B, Axial
Current - Average Rectified (Io): 3A
Technology: Standard
Reverse Recovery Time (trr): 150 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Through Hole
Package / Case: B, Axial
Packaging: Bulk
Produkt ist nicht verfügbar
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JAN1N5417 124360-lds-0231-datasheet
JAN1N5417
Hersteller: Microchip Technology
Description: DIODE STANDARD 200V 3A B AXIAL
Qualification: MIL-PRF-19500/411
Current - Reverse Leakage @ Vr: 1 µA @ 200 V
Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 9 A
Voltage - DC Reverse (Vr) (Max): 200 V
Grade: Military
Operating Temperature - Junction: -65°C ~ 175°C
Supplier Device Package: B, Axial
Current - Average Rectified (Io): 3A
Technology: Standard
Reverse Recovery Time (trr): 150 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Through Hole
Package / Case: B, Axial
Packaging: Bulk
Produkt ist nicht verfügbar
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JAN1N5417US 11075-lds-0231-1-datasheet
JAN1N5417US
Hersteller: Microchip Technology
Description: DIODE STANDARD 200V 3A B SQMELF
Qualification: MIL-PRF-19500/411
Current - Reverse Leakage @ Vr: 1 µA @ 200 V
Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 9 A
Voltage - DC Reverse (Vr) (Max): 200 V
Grade: Military
Operating Temperature - Junction: -65°C ~ 175°C
Supplier Device Package: B, SQ-MELF
Current - Average Rectified (Io): 3A
Technology: Standard
Reverse Recovery Time (trr): 150 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: SQ-MELF, B
Packaging: Bulk
Produkt ist nicht verfügbar
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JAN1N5418 124360-lds-0231-datasheet
JAN1N5418
Hersteller: Microchip Technology
Description: DIODE GEN PURP 400V 3A AXIAL
Current - Reverse Leakage @ Vr: 1 µA @ 400 V
Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 9 A
Voltage - DC Reverse (Vr) (Max): 400 V
Part Status: Active
Operating Temperature - Junction: -65°C ~ 175°C
Supplier Device Package: B, Axial
Current - Average Rectified (Io): 3A
Technology: Standard
Reverse Recovery Time (trr): 150 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Through Hole
Package / Case: B, Axial
Packaging: Bulk
Qualification: MIL-PRF-19500/411
Grade: Military
Produkt ist nicht verfügbar
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JAN1N5418US 11075-lds-0231-1-datasheet
JAN1N5418US
Hersteller: Microchip Technology
Description: DIODE GEN PURP 400V 3A D-5B
Qualification: MIL-PRF-19500/411
Technology: Standard
Reverse Recovery Time (trr): 150 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: SQ-MELF, E
Packaging: Bulk
Current - Reverse Leakage @ Vr: 1 µA @ 400 V
Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 9 A
Voltage - DC Reverse (Vr) (Max): 400 V
Part Status: Active
Operating Temperature - Junction: -65°C ~ 175°C
Supplier Device Package: D-5B
Current - Average Rectified (Io): 3A
Grade: Military
Produkt ist nicht verfügbar
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JAN1N5419 LDS-0231%2C+1N5415+thru+1N5420%2C+MIL-PRF-19500-411.pdf
JAN1N5419
Hersteller: Microchip Technology
Description: DIODE STANDARD 500V 3A B AXIAL
Qualification: MIL-PRF-19500/411
Current - Reverse Leakage @ Vr: 1 µA @ 500 V
Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 9 A
Voltage - DC Reverse (Vr) (Max): 500 V
Grade: Military
Operating Temperature - Junction: -65°C ~ 175°C
Supplier Device Package: B, Axial
Current - Average Rectified (Io): 3A
Technology: Standard
Reverse Recovery Time (trr): 250 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Through Hole
Package / Case: B, Axial
Packaging: Bulk
Produkt ist nicht verfügbar
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JAN1N5419US LDS-0231-1%2C+1N5415US+thru1N5420US%2C+MIL-PRF-19500-411.pdf
JAN1N5419US
Hersteller: Microchip Technology
Description: DIODE STANDARD 500V 3A D5B
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: SQ-MELF, E
Packaging: Bulk
Qualification: MIL-PRF-19500/411
Current - Reverse Leakage @ Vr: 1 µA @ 500 V
Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 9 A
Voltage - DC Reverse (Vr) (Max): 500 V
Grade: Military
Operating Temperature - Junction: -65°C ~ 175°C
Supplier Device Package: D-5B
Current - Average Rectified (Io): 3A
Technology: Standard
Reverse Recovery Time (trr): 250 ns
Produkt ist nicht verfügbar
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JAN1N5420 124360-lds-0231-datasheet
JAN1N5420
Hersteller: Microchip Technology
Description: DIODE GEN PURP 600V 3A B AXIAL
Technology: Standard
Reverse Recovery Time (trr): 400 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Through Hole
Package / Case: B, Axial
Packaging: Bulk
Qualification: MIL-PRF-19500/411
Grade: Military
Current - Reverse Leakage @ Vr: 1 µA @ 600 V
Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 9 A
Voltage - DC Reverse (Vr) (Max): 600 V
Operating Temperature - Junction: -65°C ~ 175°C
Supplier Device Package: B, Axial
Current - Average Rectified (Io): 3A
Produkt ist nicht verfügbar
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JAN1N5420US 11075-lds-0231-1-datasheet
JAN1N5420US
Hersteller: Microchip Technology
Description: DIODE GEN PURP 600V 3A D-5B
Qualification: MIL-PRF-19500/411
Grade: Military
Current - Reverse Leakage @ Vr: 1 µA @ 600 V
Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 9 A
Voltage - DC Reverse (Vr) (Max): 600 V
Operating Temperature - Junction: -65°C ~ 175°C
Supplier Device Package: D-5B
Current - Average Rectified (Io): 3A
Technology: Standard
Reverse Recovery Time (trr): 400 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: SQ-MELF, E
Packaging: Bulk
Produkt ist nicht verfügbar
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JAN1N5550 LDS-0230%2C+1N5550+thru+1N5554%2C+MIL-PRF-19500-420.pdf
JAN1N5550
Hersteller: Microchip Technology
Description: DIODE STANDARD 200V 3A B AXIAL
Packaging: Bulk
Package / Case: B, Axial
Mounting Type: Through Hole
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): 2 µs
Technology: Standard
Current - Average Rectified (Io): 3A
Supplier Device Package: B, Axial
Operating Temperature - Junction: -65°C ~ 175°C
Grade: Military
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 9 A
Current - Reverse Leakage @ Vr: 1 µA @ 200 V
Qualification: MIL-PRF-19500/420
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AnzahlPreis
3+8.57 EUR
100+7.96 EUR
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JAN1N5551 LDS-0230%2C+1N5550+thru+1N5554%2C+MIL-PRF-19500-420.pdf
JAN1N5551
Hersteller: Microchip Technology
Description: DIODE STANDARD 400V 3A B AXIAL
Packaging: Bulk
Package / Case: B, Axial
Mounting Type: Through Hole
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): 2 µs
Technology: Standard
Current - Average Rectified (Io): 3A
Supplier Device Package: B, Axial
Operating Temperature - Junction: -65°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 400 V
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 9 A
Current - Reverse Leakage @ Vr: 1 µA @ 400 V
Grade: Military
Qualification: MIL-PRF-19500/420
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AnzahlPreis
3+8.61 EUR
100+8 EUR
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JAN1N5552 LDS-0230%2C+1N5550+thru+1N5554%2C+MIL-PRF-19500-420.pdf
JAN1N5552
Hersteller: Microchip Technology
Description: DIODE STANDARD 600V 3A B AXIAL
Packaging: Bulk
Package / Case: B, Axial
Mounting Type: Through Hole
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): 2 µs
Technology: Standard
Current - Average Rectified (Io): 3A
Supplier Device Package: B, Axial
Operating Temperature - Junction: -65°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 9 A
Current - Reverse Leakage @ Vr: 1 µA @ 600 V
Grade: Military
Qualification: MIL-PRF-19500/420
Produkt ist nicht verfügbar
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JAN1N5553 11519-lds-0230-datasheet
JAN1N5553
Hersteller: Microchip Technology
Description: DIODE GEN PURP 800V 3A AXIAL
Current - Reverse Leakage @ Vr: 1 µA @ 800 V
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 9 A
Voltage - DC Reverse (Vr) (Max): 800 V
Operating Temperature - Junction: -65°C ~ 175°C
Supplier Device Package: B, Axial
Current - Average Rectified (Io): 3A
Technology: Standard
Reverse Recovery Time (trr): 2 µs
Speed: Standard Recovery >500ns, > 200mA (Io)
Mounting Type: Through Hole
Package / Case: B, Axial
Packaging: Bulk
Produkt ist nicht verfügbar
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JAN1N5554 11519-lds-0230-datasheet
JAN1N5554
Hersteller: Microchip Technology
Description: DIODE GEN PURP 1KV 3A AXIAL
Qualification: MIL-PRF-19500/420
Current - Reverse Leakage @ Vr: 1 µA @ 1000 V
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 9 A
Voltage - DC Reverse (Vr) (Max): 1000 V
Grade: Military
Operating Temperature - Junction: -65°C ~ 175°C
Supplier Device Package: B, Axial
Current - Average Rectified (Io): 3A
Technology: Standard
Reverse Recovery Time (trr): 2 µs
Speed: Standard Recovery >500ns, > 200mA (Io)
Mounting Type: Through Hole
Package / Case: B, Axial
Packaging: Bulk
Produkt ist nicht verfügbar
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JAN1N5804 1N5802%2C1N5804%2C1N5806.pdf
JAN1N5804
Hersteller: Microchip Technology
Description: DIODE STANDARD 100V 2.5AXIAL
Packaging: Bulk
Package / Case: A, Axial
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 25 ns
Technology: Standard
Capacitance @ Vr, F: 25pF @ 10V, 1MHz
Current - Average Rectified (Io): 2.5A
Supplier Device Package: A, Axial
Operating Temperature - Junction: -65°C ~ 175°C
Grade: Military
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 975 mV @ 2.5 A
Current - Reverse Leakage @ Vr: 1 µA @ 100 V
Qualification: MIL-PRF-19500/477
Produkt ist nicht verfügbar
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JAN1N5804US LDS-0211+%282%29%2C+1N5802-1N5804-1N5806%2C+MIL-PRF-19500-477.pdf
JAN1N5804US
Hersteller: Microchip Technology
Description: DIODE STANDARD 100V 2.5A D5A
Packaging: Bulk
Package / Case: SQ-MELF, A
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 25 ns
Technology: Standard
Capacitance @ Vr, F: 25pF @ 10V, 1MHz
Current - Average Rectified (Io): 2.5A
Supplier Device Package: D-5A
Operating Temperature - Junction: -65°C ~ 175°C
Grade: Military
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 975 mV @ 2.5 A
Current - Reverse Leakage @ Vr: 1 µA @ 100 V
Qualification: MIL-PRF-19500/477
Produkt ist nicht verfügbar
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JAN1N5806
JAN1N5806
Hersteller: Microchip Technology
Description: DIODE GEN PURP 150V 2.5A AXIAL
Qualification: MIL-PRF-19500/477
Current - Reverse Leakage @ Vr: 1 µA @ 150 V
Voltage - Forward (Vf) (Max) @ If: 975 mV @ 2.5 A
Voltage - DC Reverse (Vr) (Max): 150 V
Grade: Military
Operating Temperature - Junction: -65°C ~ 175°C
Supplier Device Package: A, Axial
Current - Average Rectified (Io): 2.5A
Capacitance @ Vr, F: 25pF @ 10V, 1MHz
Technology: Standard
Reverse Recovery Time (trr): 25 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Through Hole
Package / Case: A, Axial
Packaging: Bulk
Produkt ist nicht verfügbar
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JAN1N5811 LDS-0168-1%2C+1N5807US-1N5809US-1N5811US%28URS%29%2C+MIL-PRF-19500-477.pdf
JAN1N5811
Hersteller: Microchip Technology
Description: DIODE STANDARD 150V 3A B AXIAL
Qualification: MIL-PRF-19500/477
Grade: Military
Capacitance @ Vr, F: 60pF @ 10V, 1MHz
Technology: Standard
Reverse Recovery Time (trr): 30 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Through Hole
Package / Case: B, Axial
Packaging: Bulk
Current - Reverse Leakage @ Vr: 5 µA @ 150 V
Voltage - Forward (Vf) (Max) @ If: 875 mV @ 4 A
Voltage - DC Reverse (Vr) (Max): 150 V
Part Status: Active
Operating Temperature - Junction: -65°C ~ 175°C
Supplier Device Package: B, Axial
Current - Average Rectified (Io): 6A
auf Bestellung 170 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPreis
2+9.42 EUR
100+8.75 EUR
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JAN1N5811US 124792-lds-0168-1-datasheet
JAN1N5811US
Hersteller: Microchip Technology
Description: DIODE GEN PURP 150V 6A B SQ-MELF
Qualification: MIL-PRF-19500/477
Grade: Military
Current - Reverse Leakage @ Vr: 5 µA @ 150 V
Voltage - Forward (Vf) (Max) @ If: 875 mV @ 4 A
Voltage - DC Reverse (Vr) (Max): 150 V
Part Status: Active
Operating Temperature - Junction: -65°C ~ 175°C
Supplier Device Package: B, SQ-MELF
Current - Average Rectified (Io): 6A
Capacitance @ Vr, F: 60pF @ 10V, 1MHz
Technology: Standard
Reverse Recovery Time (trr): 30 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: SQ-MELF, B
Packaging: Bulk
Produkt ist nicht verfügbar
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JAN1N6118A lds-0277.pdf
JAN1N6118A
Hersteller: Microchip Technology
Description: TVS DIODE 25.1VWM 45.7V AXIAL
Qualification: MIL-PRF-19500/516
Grade: Military
Part Status: Active
Power Line Protection: No
Power - Peak Pulse: 500W
Voltage - Clamping (Max) @ Ipp: 45.7V
Voltage - Breakdown (Min): 31.4V
Bidirectional Channels: 1
Supplier Device Package: B, Axial
Voltage - Reverse Standoff (Typ): 25.1V
Current - Peak Pulse (10/1000µs): 10.9A
Applications: General Purpose
Operating Temperature: -55°C ~ 175°C (TJ)
Type: Zener
Mounting Type: Through Hole
Package / Case: B, Axial
Packaging: Bulk
Produkt ist nicht verfügbar
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