Produkte > MICROSEMI CORPORATION > Alle Produkte des Herstellers MICROSEMI CORPORATION (11209) > Seite 118 nach 187
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UFT14140A | Microsemi Corporation |
 Description: DIODE MODULE GP 400V 70A TO249Packaging: Bulk Package / Case: TO-249AA Isolated Base Mounting Type: Screw Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 60 ns Technology: Standard Diode Configuration: 1 Pair Common Anode Current - Average Rectified (Io) (per Diode): 70A Supplier Device Package: TO-249 Part Status: Obsolete Voltage - DC Reverse (Vr) (Max): 400 V Voltage - Forward (Vf) (Max) @ If: 1.25 V @ 70 A Current - Reverse Leakage @ Vr: 25 µA @ 400 V |
Produkt ist nicht verfügbar |
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UFT14140D | Microsemi Corporation |
Description: DIODE MODULE 400V 70A TO249 Packaging: Bulk Package / Case: TO-249AA Isolated Base Mounting Type: Screw Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 60 ns Technology: Standard Diode Configuration: 1 Pair Series Connection Current - Average Rectified (Io) (per Diode): 70A Supplier Device Package: TO-249 Part Status: Obsolete Voltage - DC Reverse (Vr) (Max): 400 V Voltage - Forward (Vf) (Max) @ If: 1.25 V @ 70 A Current - Reverse Leakage @ Vr: 25 µA @ 400 V |
Produkt ist nicht verfügbar |
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UFT20140 | Microsemi Corporation |
Description: DIODE MODULE GP 400V 100A MODULE Packaging: Bulk Package / Case: Module Mounting Type: Screw Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 70 ns Technology: Standard Diode Configuration: 1 Pair Common Cathode Current - Average Rectified (Io) (per Diode): 100A Supplier Device Package: Module Voltage - DC Reverse (Vr) (Max): 400 V Voltage - Forward (Vf) (Max) @ If: 1.25 V @ 100 A Current - Reverse Leakage @ Vr: 50 µA @ 400 V |
Produkt ist nicht verfügbar |
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| UFT20140A | Microsemi Corporation |
Description: DIODE MODULE 400V 100A |
Produkt ist nicht verfügbar |
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| UFT20140D | Microsemi Corporation |
Description: DIODE MODULE 400V 100A |
Produkt ist nicht verfügbar |
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| 2731-200P | Microsemi Corporation | Description: RF TRANS 3.1GHZ MODULE |
Produkt ist nicht verfügbar |
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APT94N65B2C3G | Microsemi Corporation |
Description: MOSFET N-CH 650V 94A T-MAX Packaging: Tube Package / Case: TO-247-3 Variant Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 94A (Tc) Rds On (Max) @ Id, Vgs: 35mOhm @ 47A, 10V Power Dissipation (Max): 833W (Tc) Vgs(th) (Max) @ Id: 3.9V @ 5.8mA Supplier Device Package: T-MAX™ [B2] Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 650 V Gate Charge (Qg) (Max) @ Vgs: 580 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 13940 pF @ 25 V |
Produkt ist nicht verfügbar |
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1N5811/TR | Microsemi Corporation |
Description: DIODE GEN PURP 150V 6A AXIAL Packaging: Tape & Reel (TR) Package / Case: B, Axial Mounting Type: Through Hole Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 30 ns Technology: Standard Current - Average Rectified (Io): 6A Supplier Device Package: B, Axial Operating Temperature - Junction: -65°C ~ 175°C Part Status: Active Voltage - DC Reverse (Vr) (Max): 150 V Voltage - Forward (Vf) (Max) @ If: 875 mV @ 4 A Current - Reverse Leakage @ Vr: 5 µA @ 150 V |
Produkt ist nicht verfügbar |
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1N5811TR | Microsemi Corporation |
Description: DIODE GEN PURP 150V 6A AXIAL |
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APT20N60BC3G | Microsemi Corporation |
Description: MOSFET N-CH 600V 20.7A TO247-3 Packaging: Tube Package / Case: TO-247-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 20.7A (Tc) Rds On (Max) @ Id, Vgs: 190mOhm @ 13.1A, 10V Power Dissipation (Max): 208W (Tc) Vgs(th) (Max) @ Id: 3.9V @ 1mA Supplier Device Package: TO-247-3 Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 600 V Gate Charge (Qg) (Max) @ Vgs: 114 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 2440 pF @ 25 V |
Produkt ist nicht verfügbar |
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APT20N60SC3G | Microsemi Corporation |
Description: MOSFET N-CH 600V 20.7A D3PAK Packaging: Tube Package / Case: TO-268-3, D3PAK (2 Leads + Tab), TO-268AA Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 20.7A (Tc) Rds On (Max) @ Id, Vgs: 190mOhm @ 13.1A, 10V Power Dissipation (Max): 208W (Tc) Vgs(th) (Max) @ Id: 3.9V @ 1mA Supplier Device Package: D3Pak Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 600 V Gate Charge (Qg) (Max) @ Vgs: 114 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 2440 pF @ 25 V |
Produkt ist nicht verfügbar |
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MSD130-08 | Microsemi Corporation |
Description: BRIDGE RECT 3PHASE 800V 130A M3 |
Produkt ist nicht verfügbar |
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MSD130-12 | Microsemi Corporation |
Description: BRIDGE RECT 3PHASE 1.2KV 130A M3 Packaging: Bulk Package / Case: M3 Mounting Type: Chassis Mount Diode Type: Three Phase Operating Temperature: -40°C ~ 150°C (TJ) Technology: Standard Supplier Device Package: M3 Part Status: Obsolete Voltage - Peak Reverse (Max): 1.2 kV Current - Average Rectified (Io): 130 A Voltage - Forward (Vf) (Max) @ If: 1.8 V @ 300 A Current - Reverse Leakage @ Vr: 300 µA @ 1200 V |
Produkt ist nicht verfügbar |
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MSD130-16 | Microsemi Corporation |
Description: BRIDGE RECT 3PHASE 1.6KV 130A M3 Packaging: Bulk Package / Case: M3 Mounting Type: Chassis Mount Diode Type: Three Phase Operating Temperature: -40°C ~ 150°C (TJ) Technology: Standard Supplier Device Package: M3 Voltage - Peak Reverse (Max): 1.6 kV Current - Average Rectified (Io): 130 A Voltage - Forward (Vf) (Max) @ If: 1.8 V @ 300 A Current - Reverse Leakage @ Vr: 300 µA @ 1600 V |
Produkt ist nicht verfügbar |
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| MSD130-18 | Microsemi Corporation |
Description: BRIDGE RECT 3PHASE 1.8KV 130A Packaging: Bulk Package / Case: M3 Mounting Type: Chassis Mount Diode Type: Three Phase Operating Temperature: -40°C ~ 150°C (TJ) Technology: Standard Voltage - Peak Reverse (Max): 1.8 kV Current - Average Rectified (Io): 130 A Voltage - Forward (Vf) (Max) @ If: 1.8 V @ 300 A Current - Reverse Leakage @ Vr: 300 µA @ 1800 V |
Produkt ist nicht verfügbar |
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| SD1309-01H | Microsemi Corporation | Description: RF POWER TRANSISTOR |
Produkt ist nicht verfügbar |
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| SD1330-05C | Microsemi Corporation | Description: TRANSISTOR |
Produkt ist nicht verfügbar |
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| SD1330-05H | Microsemi Corporation | Description: RF POWER TRANSISTOR |
Produkt ist nicht verfügbar |
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| SD1330-06H | Microsemi Corporation | Description: RF POWER TRANSISTOR |
Produkt ist nicht verfügbar |
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| SD1332-05C | Microsemi Corporation | Description: RF TRANS NPN 15V 5.5GHZ M150 |
Produkt ist nicht verfügbar |
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| SD1332-05H | Microsemi Corporation | Description: RF TRANS NPN 15V 5.5GHZ M150 |
Produkt ist nicht verfügbar |
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| SD1372-01H | Microsemi Corporation | Description: RF POWER TRANSISTOR |
Produkt ist nicht verfügbar |
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| SD1372-03H | Microsemi Corporation | Description: RF POWER TRANSISTOR |
Produkt ist nicht verfügbar |
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| SD1372-06H | Microsemi Corporation | Description: RF POWER TRANSISTOR |
Produkt ist nicht verfügbar |
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| JAN1N6116US | Microsemi Corporation |
Description: TVS DIODE 20.6VWM 39.27V SQ-MELF Packaging: Bulk Package / Case: SQ-MELF, B Mounting Type: Surface Mount Type: Zener Operating Temperature: -55°C ~ 175°C (TJ) Applications: General Purpose Current - Peak Pulse (10/1000µs): 12.73A Voltage - Reverse Standoff (Typ): 20.6V Supplier Device Package: B, SQ-MELF Bidirectional Channels: 1 Voltage - Breakdown (Min): 24.42V Voltage - Clamping (Max) @ Ipp: 39.27V Power - Peak Pulse: 500W Power Line Protection: No Part Status: Active |
Produkt ist nicht verfügbar |
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| APTML102UM09R004T3AG | Microsemi Corporation |
Description: MOSFET 2N-CH 100V 154A SP3 |
Produkt ist nicht verfügbar |
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| APTML10UM09R004T1AG | Microsemi Corporation |
Description: MOSFET N-CH 100V 154A SP1 |
Produkt ist nicht verfügbar |
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| SMBG4740C/TR13 | Microsemi Corporation |
Description: DIODE ZENER 10V 2W SMBG |
Produkt ist nicht verfügbar |
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| SMBG4740CE3/TR13 | Microsemi Corporation |
Description: DIODE ZENER 10V 2W SMBG |
Produkt ist nicht verfügbar |
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SMBJ4740C/TR13 | Microsemi Corporation |
Description: DIODE ZENER 10V 2W SMBJ |
Produkt ist nicht verfügbar |
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SMBJ4740Ce3/TR13 | Microsemi Corporation |
Description: DIODE ZENER 10V 2W SMBJ |
Produkt ist nicht verfügbar |
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VRF2933FL | Microsemi Corporation |
Description: MOSFET RF N-CH 170V 30MHZ T2 Packaging: Tube Package / Case: M177 Frequency: 30MHz Configuration: N-Channel Power - Output: 300W Gain: 22dB Technology: MOSFET Supplier Device Package: M177 Part Status: Active Voltage - Rated: 170 V Voltage - Test: 50 V Current - Test: 250 mA |
Produkt ist nicht verfügbar |
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P6KE200CAE3/TR13 | Microsemi Corporation |
Description: TVS DIODE 171VWM 274VC AXIAL Packaging: Tape & Reel (TR) Package / Case: T-18, Axial Mounting Type: Through Hole Type: Zener Operating Temperature: -65°C ~ 150°C (TJ) Applications: General Purpose Current - Peak Pulse (10/1000µs): 2.2A Voltage - Reverse Standoff (Typ): 171V Supplier Device Package: Axial Bidirectional Channels: 1 Voltage - Breakdown (Min): 190V Voltage - Clamping (Max) @ Ipp: 274V Power - Peak Pulse: 600W Power Line Protection: No Part Status: Active |
Produkt ist nicht verfügbar |
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1N4755A G | Microsemi Corporation |
Description: DIODE ZENER 43V 1W DO204AL Tolerance: ±5% Packaging: Bulk Package / Case: DO-204AL, DO-41, Axial Mounting Type: Through Hole Operating Temperature: -65°C ~ 175°C Voltage - Zener (Nom) (Vz): 43 V Impedance (Max) (Zzt): 70 Ohms Supplier Device Package: DO-204AL (DO-41) Part Status: Active Power - Max: 1 W Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 200 mA Current - Reverse Leakage @ Vr: 5 µA @ 32.7 V |
Produkt ist nicht verfügbar |
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| APTML1002U60R020T3AG | Microsemi Corporation |
Description: MOSFET 2N-CH 1000V 20A SP3 |
Produkt ist nicht verfügbar |
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| SK110E3/TR13 | Microsemi Corporation |
Description: DIODE SCHOTTKY 100V 1A DO214BA Packaging: Tape & Reel (TR) Package / Case: DO-214BA Mounting Type: Surface Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Technology: Schottky Current - Average Rectified (Io): 1A Supplier Device Package: DO-214BA Operating Temperature - Junction: -65°C ~ 175°C Part Status: Active Voltage - DC Reverse (Vr) (Max): 100 V Voltage - Forward (Vf) (Max) @ If: 800 mV @ 1 A Current - Reverse Leakage @ Vr: 500 µA @ 100 V |
Produkt ist nicht verfügbar |
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| 1N332RB | Microsemi Corporation |
Description: DIODE ZENER 51V 50W DO5 |
Produkt ist nicht verfügbar |
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| MT8888CPR1 | Microsemi Corporation |
Description: IC TELECOM INTERFACE 28PLCC Packaging: Tape & Reel (TR) Package / Case: 28-LCC (J-Lead) Mounting Type: Surface Mount Function: DTMF Transceiver Operating Temperature: -40°C ~ 85°C Voltage - Supply: 4.75V ~ 5.25V Current - Supply: 7mA Supplier Device Package: 28-PLCC Number of Circuits: 1 |
Produkt ist nicht verfügbar |
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| MT8889CPR | Microsemi Corporation |
Description: IC TELECOM INTERFACE 28PLCC |
Produkt ist nicht verfügbar |
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| ZL49031DCF1 | Microsemi Corporation |
Description: IC TELECOM INTERFACE 18SOIC Packaging: Tape & Reel (TR) Package / Case: 18-SOIC (0.295", 7.50mm Width) Mounting Type: Surface Mount Function: DTMF Receiver Operating Temperature: -40°C ~ 85°C Voltage - Supply: 4.75V ~ 5.25V Current - Supply: 3mA Supplier Device Package: 18-SOIC Part Status: Obsolete Number of Circuits: 1 |
Produkt ist nicht verfügbar |
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Core429-AN | Microsemi Corporation | Description: IP MODULE CORE429 |
Produkt ist nicht verfügbar |
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Core429-AR | Microsemi Corporation | Description: IP MODULE CORE429 |
Produkt ist nicht verfügbar |
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1N5230BDO35 | Microsemi Corporation |
Description: DIODE ZENER 4.7V 500MW DO35 Tolerance: ±5% Packaging: Tape & Reel (TR) Package / Case: DO-204AH, DO-35, Axial Mounting Type: Through Hole Operating Temperature: -65°C ~ 175°C Voltage - Zener (Nom) (Vz): 4.7 V Impedance (Max) (Zzt): 19 Ohms Supplier Device Package: DO-204AH (DO-35) Part Status: Active Power - Max: 500 mW Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 200 mA Current - Reverse Leakage @ Vr: 50 µA @ 2 V |
Produkt ist nicht verfügbar |
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TL431CDM | Microsemi Corporation |
Description: IC VREF SHUNT ADJ 2% 8SOIC Tolerance: ±2% Packaging: Tube Package / Case: 8-SOIC (0.154", 3.90mm Width) Temperature Coefficient: 30ppm/°C Typical Output Type: Adjustable Mounting Type: Surface Mount Reference Type: Shunt Operating Temperature: 0°C ~ 70°C (TA) Supplier Device Package: 8-SOIC Voltage - Output (Min/Fixed): 2.5V Part Status: Obsolete Current - Cathode: 1 mA Current - Output: 100 mA Voltage - Output (Max): 36 V |
Produkt ist nicht verfügbar |
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| ZL50075GAC2 | Microsemi Corporation |
Description: IC TELECOM INTERFACE 324BGA |
Produkt ist nicht verfügbar |
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| ZL50117GAG | Microsemi Corporation |
Description: IC TELECOM INTERFACE 324BGA |
Produkt ist nicht verfügbar |
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| ZL50119GAG | Microsemi Corporation |
Description: IC TELECOM INTERFACE 324BGA |
Produkt ist nicht verfügbar |
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1N3477 | Microsemi Corporation |
Description: DIODE ZENER 2.2V 250MW DO7 Packaging: Bulk Tolerance: ±10% Package / Case: DO-204AA, DO-7, Axial Mounting Type: Through Hole Voltage - Zener (Nom) (Vz): 2.2 V Supplier Device Package: DO-7 Power - Max: 250 mW |
Produkt ist nicht verfügbar |
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1N3477A | Microsemi Corporation |
Description: DIODE ZENER 2.2V 250MW DO7 Packaging: Bulk Tolerance: ±5% Package / Case: DO-204AA, DO-7, Axial Mounting Type: Through Hole Voltage - Zener (Nom) (Vz): 2.2 V Supplier Device Package: DO-7 Power - Max: 250 mW |
Produkt ist nicht verfügbar |
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1N5221BDO35 | Microsemi Corporation |
Description: DIODE ZENER 2.4V 500MW DO35 |
Produkt ist nicht verfügbar |
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1N5229A (DO-35) | Microsemi Corporation |
Description: DIODE ZENER 4.3V 500MW DO204AH Tolerance: ±10% Packaging: Tape & Reel (TR) Package / Case: DO-204AH, DO-35, Axial Mounting Type: Through Hole Operating Temperature: -65°C ~ 175°C Voltage - Zener (Nom) (Vz): 4.3 V Impedance (Max) (Zzt): 22 Ohms Supplier Device Package: DO-204AH (DO-35) Part Status: Active Power - Max: 500 mW Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 200 mA Current - Reverse Leakage @ Vr: 5 µA @ 1 V |
auf Bestellung 10000 Stücke: Lieferzeit 10-14 Tag (e) |
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1N5229A (DO-35) | Microsemi Corporation |
Description: DIODE ZENER 4.3V 500MW DO204AH Tolerance: ±10% Packaging: Cut Tape (CT) Package / Case: DO-204AH, DO-35, Axial Mounting Type: Through Hole Operating Temperature: -65°C ~ 175°C Voltage - Zener (Nom) (Vz): 4.3 V Impedance (Max) (Zzt): 22 Ohms Supplier Device Package: DO-204AH (DO-35) Part Status: Active Power - Max: 500 mW Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 200 mA Current - Reverse Leakage @ Vr: 5 µA @ 1 V |
auf Bestellung 11969 Stücke: Lieferzeit 10-14 Tag (e) |
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1N5232A (DO-35)TR | Microsemi Corporation |
Description: DIODE ZENER 5.6V 500MW DO204AH Tolerance: ±10% Packaging: Tape & Reel (TR) Package / Case: DO-204AH, DO-35, Axial Mounting Type: Through Hole Operating Temperature: -65°C ~ 175°C Voltage - Zener (Nom) (Vz): 5.6 V Impedance (Max) (Zzt): 11 Ohms Supplier Device Package: DO-204AH (DO-35) Part Status: Active Power - Max: 500 mW Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 200 mA Current - Reverse Leakage @ Vr: 5 µA @ 3 V |
Produkt ist nicht verfügbar |
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1N5232A (DO-35)TR | Microsemi Corporation |
Description: DIODE ZENER 5.6V 500MW DO204AH Tolerance: ±10% Packaging: Cut Tape (CT) Package / Case: DO-204AH, DO-35, Axial Mounting Type: Through Hole Operating Temperature: -65°C ~ 175°C Voltage - Zener (Nom) (Vz): 5.6 V Impedance (Max) (Zzt): 11 Ohms Supplier Device Package: DO-204AH (DO-35) Part Status: Active Power - Max: 500 mW Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 200 mA Current - Reverse Leakage @ Vr: 5 µA @ 3 V |
auf Bestellung 4246 Stücke: Lieferzeit 10-14 Tag (e) |
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1N5233BDO35 | Microsemi Corporation |
Description: DIODE ZENER 6V 500MW DO204AH Tolerance: ±5% Packaging: Tape & Reel (TR) Package / Case: DO-204AH, DO-35, Axial Mounting Type: Through Hole Operating Temperature: -65°C ~ 175°C Voltage - Zener (Nom) (Vz): 6 V Impedance (Max) (Zzt): 7 Ohms Supplier Device Package: DO-204AH (DO-35) Part Status: Active Power - Max: 500 mW Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 200 mA Current - Reverse Leakage @ Vr: 5 µA @ 3.5 V |
Produkt ist nicht verfügbar |
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1N5234BDO35 | Microsemi Corporation |
Description: DIODE ZENER 6.2V 500MW DO204AH Tolerance: ±5% Packaging: Tape & Reel (TR) Package / Case: DO-204AH, DO-35, Axial Mounting Type: Through Hole Operating Temperature: -65°C ~ 175°C Voltage - Zener (Nom) (Vz): 6.2 V Impedance (Max) (Zzt): 7 Ohms Supplier Device Package: DO-204AH (DO-35) Part Status: Discontinued at Digi-Key Power - Max: 500 mW Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 200 mA Current - Reverse Leakage @ Vr: 5 µA @ 4 V |
Produkt ist nicht verfügbar |
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1N5235BDO35 | Microsemi Corporation |
Description: DIODE ZENER 6.8V 500MW DO35 Tolerance: ±5% Packaging: Tape & Reel (TR) Package / Case: DO-204AH, DO-35, Axial Mounting Type: Through Hole Operating Temperature: -65°C ~ 175°C Voltage - Zener (Nom) (Vz): 6.8 V Impedance (Max) (Zzt): 5 Ohms Supplier Device Package: DO-35 Part Status: Active Power - Max: 500 mW Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 200 mA Current - Reverse Leakage @ Vr: 3 µA @ 5 V |
Produkt ist nicht verfügbar |
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1N5236BDO35 | Microsemi Corporation |
Description: DIODE ZENER 7.5V 500MW DO35 Tolerance: ±5% Packaging: Tape & Reel (TR) Package / Case: DO-204AH, DO-35, Axial Mounting Type: Through Hole Operating Temperature: -65°C ~ 175°C Voltage - Zener (Nom) (Vz): 7.5 V Impedance (Max) (Zzt): 6 Ohms Supplier Device Package: DO-204AH (DO-35) Part Status: Active Power - Max: 500 mW Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 200 mA Current - Reverse Leakage @ Vr: 3 µA @ 6 V |
Produkt ist nicht verfügbar |
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1N5239BDO35 | Microsemi Corporation |
Description: DIODE ZENER 9.1V 500MW DO35 Tolerance: ±5% Packaging: Tape & Reel (TR) Package / Case: DO-204AH, DO-35, Axial Mounting Type: Through Hole Operating Temperature: -65°C ~ 175°C Voltage - Zener (Nom) (Vz): 9.1 V Impedance (Max) (Zzt): 10 Ohms Supplier Device Package: DO-204AH (DO-35) Part Status: Active Power - Max: 500 mW Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 200 mA Current - Reverse Leakage @ Vr: 3 µA @ 7 V |
Produkt ist nicht verfügbar |
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1N5245BDO35 | Microsemi Corporation |
Description: DIODE ZENER 15V 500MW DO35 Tolerance: ±5% Packaging: Tape & Reel (TR) Package / Case: DO-204AH, DO-35, Axial Mounting Type: Through Hole Operating Temperature: -65°C ~ 175°C Voltage - Zener (Nom) (Vz): 15 V Impedance (Max) (Zzt): 16 Ohms Supplier Device Package: DO-204AH (DO-35) Part Status: Active Power - Max: 500 mW Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 200 mA Current - Reverse Leakage @ Vr: 100 nA @ 11 V |
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| UFT14140A |
|
Hersteller: Microsemi Corporation
Description: DIODE MODULE GP 400V 70A TO249
Packaging: Bulk
Package / Case: TO-249AA Isolated Base
Mounting Type: Screw Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 60 ns
Technology: Standard
Diode Configuration: 1 Pair Common Anode
Current - Average Rectified (Io) (per Diode): 70A
Supplier Device Package: TO-249
Part Status: Obsolete
Voltage - DC Reverse (Vr) (Max): 400 V
Voltage - Forward (Vf) (Max) @ If: 1.25 V @ 70 A
Current - Reverse Leakage @ Vr: 25 µA @ 400 V
Description: DIODE MODULE GP 400V 70A TO249
Packaging: Bulk
Package / Case: TO-249AA Isolated Base
Mounting Type: Screw Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 60 ns
Technology: Standard
Diode Configuration: 1 Pair Common Anode
Current - Average Rectified (Io) (per Diode): 70A
Supplier Device Package: TO-249
Part Status: Obsolete
Voltage - DC Reverse (Vr) (Max): 400 V
Voltage - Forward (Vf) (Max) @ If: 1.25 V @ 70 A
Current - Reverse Leakage @ Vr: 25 µA @ 400 V
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| UFT14140D |
|
Hersteller: Microsemi Corporation
Description: DIODE MODULE 400V 70A TO249
Packaging: Bulk
Package / Case: TO-249AA Isolated Base
Mounting Type: Screw Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 60 ns
Technology: Standard
Diode Configuration: 1 Pair Series Connection
Current - Average Rectified (Io) (per Diode): 70A
Supplier Device Package: TO-249
Part Status: Obsolete
Voltage - DC Reverse (Vr) (Max): 400 V
Voltage - Forward (Vf) (Max) @ If: 1.25 V @ 70 A
Current - Reverse Leakage @ Vr: 25 µA @ 400 V
Description: DIODE MODULE 400V 70A TO249
Packaging: Bulk
Package / Case: TO-249AA Isolated Base
Mounting Type: Screw Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 60 ns
Technology: Standard
Diode Configuration: 1 Pair Series Connection
Current - Average Rectified (Io) (per Diode): 70A
Supplier Device Package: TO-249
Part Status: Obsolete
Voltage - DC Reverse (Vr) (Max): 400 V
Voltage - Forward (Vf) (Max) @ If: 1.25 V @ 70 A
Current - Reverse Leakage @ Vr: 25 µA @ 400 V
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| UFT20140 |
|
Hersteller: Microsemi Corporation
Description: DIODE MODULE GP 400V 100A MODULE
Packaging: Bulk
Package / Case: Module
Mounting Type: Screw Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 70 ns
Technology: Standard
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 100A
Supplier Device Package: Module
Voltage - DC Reverse (Vr) (Max): 400 V
Voltage - Forward (Vf) (Max) @ If: 1.25 V @ 100 A
Current - Reverse Leakage @ Vr: 50 µA @ 400 V
Description: DIODE MODULE GP 400V 100A MODULE
Packaging: Bulk
Package / Case: Module
Mounting Type: Screw Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 70 ns
Technology: Standard
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 100A
Supplier Device Package: Module
Voltage - DC Reverse (Vr) (Max): 400 V
Voltage - Forward (Vf) (Max) @ If: 1.25 V @ 100 A
Current - Reverse Leakage @ Vr: 50 µA @ 400 V
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| UFT20140A |
|
Hersteller: Microsemi Corporation
Description: DIODE MODULE 400V 100A
Description: DIODE MODULE 400V 100A
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| UFT20140D |
|
Hersteller: Microsemi Corporation
Description: DIODE MODULE 400V 100A
Description: DIODE MODULE 400V 100A
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| 2731-200P |
Hersteller: Microsemi Corporation
Description: RF TRANS 3.1GHZ MODULE
Description: RF TRANS 3.1GHZ MODULE
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| APT94N65B2C3G |
Hersteller: Microsemi Corporation
Description: MOSFET N-CH 650V 94A T-MAX
Packaging: Tube
Package / Case: TO-247-3 Variant
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 94A (Tc)
Rds On (Max) @ Id, Vgs: 35mOhm @ 47A, 10V
Power Dissipation (Max): 833W (Tc)
Vgs(th) (Max) @ Id: 3.9V @ 5.8mA
Supplier Device Package: T-MAX™ [B2]
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 580 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 13940 pF @ 25 V
Description: MOSFET N-CH 650V 94A T-MAX
Packaging: Tube
Package / Case: TO-247-3 Variant
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 94A (Tc)
Rds On (Max) @ Id, Vgs: 35mOhm @ 47A, 10V
Power Dissipation (Max): 833W (Tc)
Vgs(th) (Max) @ Id: 3.9V @ 5.8mA
Supplier Device Package: T-MAX™ [B2]
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 580 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 13940 pF @ 25 V
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| 1N5811/TR |
|
Hersteller: Microsemi Corporation
Description: DIODE GEN PURP 150V 6A AXIAL
Packaging: Tape & Reel (TR)
Package / Case: B, Axial
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 30 ns
Technology: Standard
Current - Average Rectified (Io): 6A
Supplier Device Package: B, Axial
Operating Temperature - Junction: -65°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 150 V
Voltage - Forward (Vf) (Max) @ If: 875 mV @ 4 A
Current - Reverse Leakage @ Vr: 5 µA @ 150 V
Description: DIODE GEN PURP 150V 6A AXIAL
Packaging: Tape & Reel (TR)
Package / Case: B, Axial
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 30 ns
Technology: Standard
Current - Average Rectified (Io): 6A
Supplier Device Package: B, Axial
Operating Temperature - Junction: -65°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 150 V
Voltage - Forward (Vf) (Max) @ If: 875 mV @ 4 A
Current - Reverse Leakage @ Vr: 5 µA @ 150 V
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| 1N5811TR |
|
Hersteller: Microsemi Corporation
Description: DIODE GEN PURP 150V 6A AXIAL
Description: DIODE GEN PURP 150V 6A AXIAL
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| APT20N60BC3G |
|
Hersteller: Microsemi Corporation
Description: MOSFET N-CH 600V 20.7A TO247-3
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 20.7A (Tc)
Rds On (Max) @ Id, Vgs: 190mOhm @ 13.1A, 10V
Power Dissipation (Max): 208W (Tc)
Vgs(th) (Max) @ Id: 3.9V @ 1mA
Supplier Device Package: TO-247-3
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 114 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2440 pF @ 25 V
Description: MOSFET N-CH 600V 20.7A TO247-3
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 20.7A (Tc)
Rds On (Max) @ Id, Vgs: 190mOhm @ 13.1A, 10V
Power Dissipation (Max): 208W (Tc)
Vgs(th) (Max) @ Id: 3.9V @ 1mA
Supplier Device Package: TO-247-3
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 114 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2440 pF @ 25 V
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| APT20N60SC3G |
|
Hersteller: Microsemi Corporation
Description: MOSFET N-CH 600V 20.7A D3PAK
Packaging: Tube
Package / Case: TO-268-3, D3PAK (2 Leads + Tab), TO-268AA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 20.7A (Tc)
Rds On (Max) @ Id, Vgs: 190mOhm @ 13.1A, 10V
Power Dissipation (Max): 208W (Tc)
Vgs(th) (Max) @ Id: 3.9V @ 1mA
Supplier Device Package: D3Pak
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 114 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2440 pF @ 25 V
Description: MOSFET N-CH 600V 20.7A D3PAK
Packaging: Tube
Package / Case: TO-268-3, D3PAK (2 Leads + Tab), TO-268AA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 20.7A (Tc)
Rds On (Max) @ Id, Vgs: 190mOhm @ 13.1A, 10V
Power Dissipation (Max): 208W (Tc)
Vgs(th) (Max) @ Id: 3.9V @ 1mA
Supplier Device Package: D3Pak
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 114 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2440 pF @ 25 V
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| MSD130-08 |
|
Hersteller: Microsemi Corporation
Description: BRIDGE RECT 3PHASE 800V 130A M3
Description: BRIDGE RECT 3PHASE 800V 130A M3
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| MSD130-12 |
|
Hersteller: Microsemi Corporation
Description: BRIDGE RECT 3PHASE 1.2KV 130A M3
Packaging: Bulk
Package / Case: M3
Mounting Type: Chassis Mount
Diode Type: Three Phase
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: M3
Part Status: Obsolete
Voltage - Peak Reverse (Max): 1.2 kV
Current - Average Rectified (Io): 130 A
Voltage - Forward (Vf) (Max) @ If: 1.8 V @ 300 A
Current - Reverse Leakage @ Vr: 300 µA @ 1200 V
Description: BRIDGE RECT 3PHASE 1.2KV 130A M3
Packaging: Bulk
Package / Case: M3
Mounting Type: Chassis Mount
Diode Type: Three Phase
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: M3
Part Status: Obsolete
Voltage - Peak Reverse (Max): 1.2 kV
Current - Average Rectified (Io): 130 A
Voltage - Forward (Vf) (Max) @ If: 1.8 V @ 300 A
Current - Reverse Leakage @ Vr: 300 µA @ 1200 V
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| MSD130-16 |
|
Hersteller: Microsemi Corporation
Description: BRIDGE RECT 3PHASE 1.6KV 130A M3
Packaging: Bulk
Package / Case: M3
Mounting Type: Chassis Mount
Diode Type: Three Phase
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: M3
Voltage - Peak Reverse (Max): 1.6 kV
Current - Average Rectified (Io): 130 A
Voltage - Forward (Vf) (Max) @ If: 1.8 V @ 300 A
Current - Reverse Leakage @ Vr: 300 µA @ 1600 V
Description: BRIDGE RECT 3PHASE 1.6KV 130A M3
Packaging: Bulk
Package / Case: M3
Mounting Type: Chassis Mount
Diode Type: Three Phase
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: M3
Voltage - Peak Reverse (Max): 1.6 kV
Current - Average Rectified (Io): 130 A
Voltage - Forward (Vf) (Max) @ If: 1.8 V @ 300 A
Current - Reverse Leakage @ Vr: 300 µA @ 1600 V
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| MSD130-18 |
|
Hersteller: Microsemi Corporation
Description: BRIDGE RECT 3PHASE 1.8KV 130A
Packaging: Bulk
Package / Case: M3
Mounting Type: Chassis Mount
Diode Type: Three Phase
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: Standard
Voltage - Peak Reverse (Max): 1.8 kV
Current - Average Rectified (Io): 130 A
Voltage - Forward (Vf) (Max) @ If: 1.8 V @ 300 A
Current - Reverse Leakage @ Vr: 300 µA @ 1800 V
Description: BRIDGE RECT 3PHASE 1.8KV 130A
Packaging: Bulk
Package / Case: M3
Mounting Type: Chassis Mount
Diode Type: Three Phase
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: Standard
Voltage - Peak Reverse (Max): 1.8 kV
Current - Average Rectified (Io): 130 A
Voltage - Forward (Vf) (Max) @ If: 1.8 V @ 300 A
Current - Reverse Leakage @ Vr: 300 µA @ 1800 V
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| SD1309-01H |
Hersteller: Microsemi Corporation
Description: RF POWER TRANSISTOR
Description: RF POWER TRANSISTOR
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| SD1330-05C |
Hersteller: Microsemi Corporation
Description: TRANSISTOR
Description: TRANSISTOR
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| SD1330-05H |
Hersteller: Microsemi Corporation
Description: RF POWER TRANSISTOR
Description: RF POWER TRANSISTOR
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| SD1330-06H |
Hersteller: Microsemi Corporation
Description: RF POWER TRANSISTOR
Description: RF POWER TRANSISTOR
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| SD1332-05C |
Hersteller: Microsemi Corporation
Description: RF TRANS NPN 15V 5.5GHZ M150
Description: RF TRANS NPN 15V 5.5GHZ M150
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| SD1332-05H |
Hersteller: Microsemi Corporation
Description: RF TRANS NPN 15V 5.5GHZ M150
Description: RF TRANS NPN 15V 5.5GHZ M150
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| SD1372-01H |
Hersteller: Microsemi Corporation
Description: RF POWER TRANSISTOR
Description: RF POWER TRANSISTOR
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| SD1372-03H |
Hersteller: Microsemi Corporation
Description: RF POWER TRANSISTOR
Description: RF POWER TRANSISTOR
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| SD1372-06H |
Hersteller: Microsemi Corporation
Description: RF POWER TRANSISTOR
Description: RF POWER TRANSISTOR
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| JAN1N6116US |
|
Hersteller: Microsemi Corporation
Description: TVS DIODE 20.6VWM 39.27V SQ-MELF
Packaging: Bulk
Package / Case: SQ-MELF, B
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 175°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 12.73A
Voltage - Reverse Standoff (Typ): 20.6V
Supplier Device Package: B, SQ-MELF
Bidirectional Channels: 1
Voltage - Breakdown (Min): 24.42V
Voltage - Clamping (Max) @ Ipp: 39.27V
Power - Peak Pulse: 500W
Power Line Protection: No
Part Status: Active
Description: TVS DIODE 20.6VWM 39.27V SQ-MELF
Packaging: Bulk
Package / Case: SQ-MELF, B
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 175°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 12.73A
Voltage - Reverse Standoff (Typ): 20.6V
Supplier Device Package: B, SQ-MELF
Bidirectional Channels: 1
Voltage - Breakdown (Min): 24.42V
Voltage - Clamping (Max) @ Ipp: 39.27V
Power - Peak Pulse: 500W
Power Line Protection: No
Part Status: Active
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| APTML102UM09R004T3AG |
|
Hersteller: Microsemi Corporation
Description: MOSFET 2N-CH 100V 154A SP3
Description: MOSFET 2N-CH 100V 154A SP3
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| APTML10UM09R004T1AG |
|
Hersteller: Microsemi Corporation
Description: MOSFET N-CH 100V 154A SP1
Description: MOSFET N-CH 100V 154A SP1
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| SMBG4740C/TR13 |
|
Hersteller: Microsemi Corporation
Description: DIODE ZENER 10V 2W SMBG
Description: DIODE ZENER 10V 2W SMBG
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| SMBG4740CE3/TR13 |
|
Hersteller: Microsemi Corporation
Description: DIODE ZENER 10V 2W SMBG
Description: DIODE ZENER 10V 2W SMBG
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| SMBJ4740C/TR13 |
|
Hersteller: Microsemi Corporation
Description: DIODE ZENER 10V 2W SMBJ
Description: DIODE ZENER 10V 2W SMBJ
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| SMBJ4740Ce3/TR13 |
|
Hersteller: Microsemi Corporation
Description: DIODE ZENER 10V 2W SMBJ
Description: DIODE ZENER 10V 2W SMBJ
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| VRF2933FL |
Hersteller: Microsemi Corporation
Description: MOSFET RF N-CH 170V 30MHZ T2
Packaging: Tube
Package / Case: M177
Frequency: 30MHz
Configuration: N-Channel
Power - Output: 300W
Gain: 22dB
Technology: MOSFET
Supplier Device Package: M177
Part Status: Active
Voltage - Rated: 170 V
Voltage - Test: 50 V
Current - Test: 250 mA
Description: MOSFET RF N-CH 170V 30MHZ T2
Packaging: Tube
Package / Case: M177
Frequency: 30MHz
Configuration: N-Channel
Power - Output: 300W
Gain: 22dB
Technology: MOSFET
Supplier Device Package: M177
Part Status: Active
Voltage - Rated: 170 V
Voltage - Test: 50 V
Current - Test: 250 mA
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| P6KE200CAE3/TR13 |
|
Hersteller: Microsemi Corporation
Description: TVS DIODE 171VWM 274VC AXIAL
Packaging: Tape & Reel (TR)
Package / Case: T-18, Axial
Mounting Type: Through Hole
Type: Zener
Operating Temperature: -65°C ~ 150°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 2.2A
Voltage - Reverse Standoff (Typ): 171V
Supplier Device Package: Axial
Bidirectional Channels: 1
Voltage - Breakdown (Min): 190V
Voltage - Clamping (Max) @ Ipp: 274V
Power - Peak Pulse: 600W
Power Line Protection: No
Part Status: Active
Description: TVS DIODE 171VWM 274VC AXIAL
Packaging: Tape & Reel (TR)
Package / Case: T-18, Axial
Mounting Type: Through Hole
Type: Zener
Operating Temperature: -65°C ~ 150°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 2.2A
Voltage - Reverse Standoff (Typ): 171V
Supplier Device Package: Axial
Bidirectional Channels: 1
Voltage - Breakdown (Min): 190V
Voltage - Clamping (Max) @ Ipp: 274V
Power - Peak Pulse: 600W
Power Line Protection: No
Part Status: Active
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| 1N4755A G |
|
Hersteller: Microsemi Corporation
Description: DIODE ZENER 43V 1W DO204AL
Tolerance: ±5%
Packaging: Bulk
Package / Case: DO-204AL, DO-41, Axial
Mounting Type: Through Hole
Operating Temperature: -65°C ~ 175°C
Voltage - Zener (Nom) (Vz): 43 V
Impedance (Max) (Zzt): 70 Ohms
Supplier Device Package: DO-204AL (DO-41)
Part Status: Active
Power - Max: 1 W
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 200 mA
Current - Reverse Leakage @ Vr: 5 µA @ 32.7 V
Description: DIODE ZENER 43V 1W DO204AL
Tolerance: ±5%
Packaging: Bulk
Package / Case: DO-204AL, DO-41, Axial
Mounting Type: Through Hole
Operating Temperature: -65°C ~ 175°C
Voltage - Zener (Nom) (Vz): 43 V
Impedance (Max) (Zzt): 70 Ohms
Supplier Device Package: DO-204AL (DO-41)
Part Status: Active
Power - Max: 1 W
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 200 mA
Current - Reverse Leakage @ Vr: 5 µA @ 32.7 V
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| APTML1002U60R020T3AG |
|
Hersteller: Microsemi Corporation
Description: MOSFET 2N-CH 1000V 20A SP3
Description: MOSFET 2N-CH 1000V 20A SP3
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| SK110E3/TR13 |
|
Hersteller: Microsemi Corporation
Description: DIODE SCHOTTKY 100V 1A DO214BA
Packaging: Tape & Reel (TR)
Package / Case: DO-214BA
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 1A
Supplier Device Package: DO-214BA
Operating Temperature - Junction: -65°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 800 mV @ 1 A
Current - Reverse Leakage @ Vr: 500 µA @ 100 V
Description: DIODE SCHOTTKY 100V 1A DO214BA
Packaging: Tape & Reel (TR)
Package / Case: DO-214BA
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 1A
Supplier Device Package: DO-214BA
Operating Temperature - Junction: -65°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 800 mV @ 1 A
Current - Reverse Leakage @ Vr: 500 µA @ 100 V
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| 1N332RB |
|
Hersteller: Microsemi Corporation
Description: DIODE ZENER 51V 50W DO5
Description: DIODE ZENER 51V 50W DO5
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| MT8888CPR1 |
|
Hersteller: Microsemi Corporation
Description: IC TELECOM INTERFACE 28PLCC
Packaging: Tape & Reel (TR)
Package / Case: 28-LCC (J-Lead)
Mounting Type: Surface Mount
Function: DTMF Transceiver
Operating Temperature: -40°C ~ 85°C
Voltage - Supply: 4.75V ~ 5.25V
Current - Supply: 7mA
Supplier Device Package: 28-PLCC
Number of Circuits: 1
Description: IC TELECOM INTERFACE 28PLCC
Packaging: Tape & Reel (TR)
Package / Case: 28-LCC (J-Lead)
Mounting Type: Surface Mount
Function: DTMF Transceiver
Operating Temperature: -40°C ~ 85°C
Voltage - Supply: 4.75V ~ 5.25V
Current - Supply: 7mA
Supplier Device Package: 28-PLCC
Number of Circuits: 1
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| MT8889CPR |
|
Hersteller: Microsemi Corporation
Description: IC TELECOM INTERFACE 28PLCC
Description: IC TELECOM INTERFACE 28PLCC
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| ZL49031DCF1 |
|
Hersteller: Microsemi Corporation
Description: IC TELECOM INTERFACE 18SOIC
Packaging: Tape & Reel (TR)
Package / Case: 18-SOIC (0.295", 7.50mm Width)
Mounting Type: Surface Mount
Function: DTMF Receiver
Operating Temperature: -40°C ~ 85°C
Voltage - Supply: 4.75V ~ 5.25V
Current - Supply: 3mA
Supplier Device Package: 18-SOIC
Part Status: Obsolete
Number of Circuits: 1
Description: IC TELECOM INTERFACE 18SOIC
Packaging: Tape & Reel (TR)
Package / Case: 18-SOIC (0.295", 7.50mm Width)
Mounting Type: Surface Mount
Function: DTMF Receiver
Operating Temperature: -40°C ~ 85°C
Voltage - Supply: 4.75V ~ 5.25V
Current - Supply: 3mA
Supplier Device Package: 18-SOIC
Part Status: Obsolete
Number of Circuits: 1
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| Core429-AN |
Hersteller: Microsemi Corporation
Description: IP MODULE CORE429
Description: IP MODULE CORE429
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| Core429-AR |
Hersteller: Microsemi Corporation
Description: IP MODULE CORE429
Description: IP MODULE CORE429
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| 1N5230BDO35 |
|
Hersteller: Microsemi Corporation
Description: DIODE ZENER 4.7V 500MW DO35
Tolerance: ±5%
Packaging: Tape & Reel (TR)
Package / Case: DO-204AH, DO-35, Axial
Mounting Type: Through Hole
Operating Temperature: -65°C ~ 175°C
Voltage - Zener (Nom) (Vz): 4.7 V
Impedance (Max) (Zzt): 19 Ohms
Supplier Device Package: DO-204AH (DO-35)
Part Status: Active
Power - Max: 500 mW
Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 200 mA
Current - Reverse Leakage @ Vr: 50 µA @ 2 V
Description: DIODE ZENER 4.7V 500MW DO35
Tolerance: ±5%
Packaging: Tape & Reel (TR)
Package / Case: DO-204AH, DO-35, Axial
Mounting Type: Through Hole
Operating Temperature: -65°C ~ 175°C
Voltage - Zener (Nom) (Vz): 4.7 V
Impedance (Max) (Zzt): 19 Ohms
Supplier Device Package: DO-204AH (DO-35)
Part Status: Active
Power - Max: 500 mW
Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 200 mA
Current - Reverse Leakage @ Vr: 50 µA @ 2 V
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| TL431CDM |
|
Hersteller: Microsemi Corporation
Description: IC VREF SHUNT ADJ 2% 8SOIC
Tolerance: ±2%
Packaging: Tube
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Temperature Coefficient: 30ppm/°C Typical
Output Type: Adjustable
Mounting Type: Surface Mount
Reference Type: Shunt
Operating Temperature: 0°C ~ 70°C (TA)
Supplier Device Package: 8-SOIC
Voltage - Output (Min/Fixed): 2.5V
Part Status: Obsolete
Current - Cathode: 1 mA
Current - Output: 100 mA
Voltage - Output (Max): 36 V
Description: IC VREF SHUNT ADJ 2% 8SOIC
Tolerance: ±2%
Packaging: Tube
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Temperature Coefficient: 30ppm/°C Typical
Output Type: Adjustable
Mounting Type: Surface Mount
Reference Type: Shunt
Operating Temperature: 0°C ~ 70°C (TA)
Supplier Device Package: 8-SOIC
Voltage - Output (Min/Fixed): 2.5V
Part Status: Obsolete
Current - Cathode: 1 mA
Current - Output: 100 mA
Voltage - Output (Max): 36 V
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| ZL50075GAC2 |
|
Hersteller: Microsemi Corporation
Description: IC TELECOM INTERFACE 324BGA
Description: IC TELECOM INTERFACE 324BGA
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| ZL50117GAG |
|
Hersteller: Microsemi Corporation
Description: IC TELECOM INTERFACE 324BGA
Description: IC TELECOM INTERFACE 324BGA
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| ZL50119GAG |
|
Hersteller: Microsemi Corporation
Description: IC TELECOM INTERFACE 324BGA
Description: IC TELECOM INTERFACE 324BGA
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| 1N3477 |
Hersteller: Microsemi Corporation
Description: DIODE ZENER 2.2V 250MW DO7
Packaging: Bulk
Tolerance: ±10%
Package / Case: DO-204AA, DO-7, Axial
Mounting Type: Through Hole
Voltage - Zener (Nom) (Vz): 2.2 V
Supplier Device Package: DO-7
Power - Max: 250 mW
Description: DIODE ZENER 2.2V 250MW DO7
Packaging: Bulk
Tolerance: ±10%
Package / Case: DO-204AA, DO-7, Axial
Mounting Type: Through Hole
Voltage - Zener (Nom) (Vz): 2.2 V
Supplier Device Package: DO-7
Power - Max: 250 mW
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| 1N3477A |
Hersteller: Microsemi Corporation
Description: DIODE ZENER 2.2V 250MW DO7
Packaging: Bulk
Tolerance: ±5%
Package / Case: DO-204AA, DO-7, Axial
Mounting Type: Through Hole
Voltage - Zener (Nom) (Vz): 2.2 V
Supplier Device Package: DO-7
Power - Max: 250 mW
Description: DIODE ZENER 2.2V 250MW DO7
Packaging: Bulk
Tolerance: ±5%
Package / Case: DO-204AA, DO-7, Axial
Mounting Type: Through Hole
Voltage - Zener (Nom) (Vz): 2.2 V
Supplier Device Package: DO-7
Power - Max: 250 mW
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| 1N5221BDO35 |
|
Hersteller: Microsemi Corporation
Description: DIODE ZENER 2.4V 500MW DO35
Description: DIODE ZENER 2.4V 500MW DO35
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| 1N5229A (DO-35) |
|
Hersteller: Microsemi Corporation
Description: DIODE ZENER 4.3V 500MW DO204AH
Tolerance: ±10%
Packaging: Tape & Reel (TR)
Package / Case: DO-204AH, DO-35, Axial
Mounting Type: Through Hole
Operating Temperature: -65°C ~ 175°C
Voltage - Zener (Nom) (Vz): 4.3 V
Impedance (Max) (Zzt): 22 Ohms
Supplier Device Package: DO-204AH (DO-35)
Part Status: Active
Power - Max: 500 mW
Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 200 mA
Current - Reverse Leakage @ Vr: 5 µA @ 1 V
Description: DIODE ZENER 4.3V 500MW DO204AH
Tolerance: ±10%
Packaging: Tape & Reel (TR)
Package / Case: DO-204AH, DO-35, Axial
Mounting Type: Through Hole
Operating Temperature: -65°C ~ 175°C
Voltage - Zener (Nom) (Vz): 4.3 V
Impedance (Max) (Zzt): 22 Ohms
Supplier Device Package: DO-204AH (DO-35)
Part Status: Active
Power - Max: 500 mW
Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 200 mA
Current - Reverse Leakage @ Vr: 5 µA @ 1 V
auf Bestellung 10000 Stücke:
Lieferzeit 10-14 Tag (e)| Anzahl | Preis |
|---|---|
| 10000+ | 1.15 EUR |
| 1N5229A (DO-35) |
|
Hersteller: Microsemi Corporation
Description: DIODE ZENER 4.3V 500MW DO204AH
Tolerance: ±10%
Packaging: Cut Tape (CT)
Package / Case: DO-204AH, DO-35, Axial
Mounting Type: Through Hole
Operating Temperature: -65°C ~ 175°C
Voltage - Zener (Nom) (Vz): 4.3 V
Impedance (Max) (Zzt): 22 Ohms
Supplier Device Package: DO-204AH (DO-35)
Part Status: Active
Power - Max: 500 mW
Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 200 mA
Current - Reverse Leakage @ Vr: 5 µA @ 1 V
Description: DIODE ZENER 4.3V 500MW DO204AH
Tolerance: ±10%
Packaging: Cut Tape (CT)
Package / Case: DO-204AH, DO-35, Axial
Mounting Type: Through Hole
Operating Temperature: -65°C ~ 175°C
Voltage - Zener (Nom) (Vz): 4.3 V
Impedance (Max) (Zzt): 22 Ohms
Supplier Device Package: DO-204AH (DO-35)
Part Status: Active
Power - Max: 500 mW
Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 200 mA
Current - Reverse Leakage @ Vr: 5 µA @ 1 V
auf Bestellung 11969 Stücke:
Lieferzeit 10-14 Tag (e)| Anzahl | Preis |
|---|---|
| 5+ | 4.08 EUR |
| 10+ | 2.62 EUR |
| 25+ | 2.24 EUR |
| 100+ | 1.79 EUR |
| 1N5232A (DO-35)TR |
|
Hersteller: Microsemi Corporation
Description: DIODE ZENER 5.6V 500MW DO204AH
Tolerance: ±10%
Packaging: Tape & Reel (TR)
Package / Case: DO-204AH, DO-35, Axial
Mounting Type: Through Hole
Operating Temperature: -65°C ~ 175°C
Voltage - Zener (Nom) (Vz): 5.6 V
Impedance (Max) (Zzt): 11 Ohms
Supplier Device Package: DO-204AH (DO-35)
Part Status: Active
Power - Max: 500 mW
Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 200 mA
Current - Reverse Leakage @ Vr: 5 µA @ 3 V
Description: DIODE ZENER 5.6V 500MW DO204AH
Tolerance: ±10%
Packaging: Tape & Reel (TR)
Package / Case: DO-204AH, DO-35, Axial
Mounting Type: Through Hole
Operating Temperature: -65°C ~ 175°C
Voltage - Zener (Nom) (Vz): 5.6 V
Impedance (Max) (Zzt): 11 Ohms
Supplier Device Package: DO-204AH (DO-35)
Part Status: Active
Power - Max: 500 mW
Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 200 mA
Current - Reverse Leakage @ Vr: 5 µA @ 3 V
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| 1N5232A (DO-35)TR |
|
Hersteller: Microsemi Corporation
Description: DIODE ZENER 5.6V 500MW DO204AH
Tolerance: ±10%
Packaging: Cut Tape (CT)
Package / Case: DO-204AH, DO-35, Axial
Mounting Type: Through Hole
Operating Temperature: -65°C ~ 175°C
Voltage - Zener (Nom) (Vz): 5.6 V
Impedance (Max) (Zzt): 11 Ohms
Supplier Device Package: DO-204AH (DO-35)
Part Status: Active
Power - Max: 500 mW
Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 200 mA
Current - Reverse Leakage @ Vr: 5 µA @ 3 V
Description: DIODE ZENER 5.6V 500MW DO204AH
Tolerance: ±10%
Packaging: Cut Tape (CT)
Package / Case: DO-204AH, DO-35, Axial
Mounting Type: Through Hole
Operating Temperature: -65°C ~ 175°C
Voltage - Zener (Nom) (Vz): 5.6 V
Impedance (Max) (Zzt): 11 Ohms
Supplier Device Package: DO-204AH (DO-35)
Part Status: Active
Power - Max: 500 mW
Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 200 mA
Current - Reverse Leakage @ Vr: 5 µA @ 3 V
auf Bestellung 4246 Stücke:
Lieferzeit 10-14 Tag (e)| Anzahl | Preis |
|---|---|
| 4+ | 4.47 EUR |
| 10+ | 2.88 EUR |
| 25+ | 2.46 EUR |
| 100+ | 1.98 EUR |
| 1N5233BDO35 |
|
Hersteller: Microsemi Corporation
Description: DIODE ZENER 6V 500MW DO204AH
Tolerance: ±5%
Packaging: Tape & Reel (TR)
Package / Case: DO-204AH, DO-35, Axial
Mounting Type: Through Hole
Operating Temperature: -65°C ~ 175°C
Voltage - Zener (Nom) (Vz): 6 V
Impedance (Max) (Zzt): 7 Ohms
Supplier Device Package: DO-204AH (DO-35)
Part Status: Active
Power - Max: 500 mW
Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 200 mA
Current - Reverse Leakage @ Vr: 5 µA @ 3.5 V
Description: DIODE ZENER 6V 500MW DO204AH
Tolerance: ±5%
Packaging: Tape & Reel (TR)
Package / Case: DO-204AH, DO-35, Axial
Mounting Type: Through Hole
Operating Temperature: -65°C ~ 175°C
Voltage - Zener (Nom) (Vz): 6 V
Impedance (Max) (Zzt): 7 Ohms
Supplier Device Package: DO-204AH (DO-35)
Part Status: Active
Power - Max: 500 mW
Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 200 mA
Current - Reverse Leakage @ Vr: 5 µA @ 3.5 V
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| 1N5234BDO35 |
|
Hersteller: Microsemi Corporation
Description: DIODE ZENER 6.2V 500MW DO204AH
Tolerance: ±5%
Packaging: Tape & Reel (TR)
Package / Case: DO-204AH, DO-35, Axial
Mounting Type: Through Hole
Operating Temperature: -65°C ~ 175°C
Voltage - Zener (Nom) (Vz): 6.2 V
Impedance (Max) (Zzt): 7 Ohms
Supplier Device Package: DO-204AH (DO-35)
Part Status: Discontinued at Digi-Key
Power - Max: 500 mW
Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 200 mA
Current - Reverse Leakage @ Vr: 5 µA @ 4 V
Description: DIODE ZENER 6.2V 500MW DO204AH
Tolerance: ±5%
Packaging: Tape & Reel (TR)
Package / Case: DO-204AH, DO-35, Axial
Mounting Type: Through Hole
Operating Temperature: -65°C ~ 175°C
Voltage - Zener (Nom) (Vz): 6.2 V
Impedance (Max) (Zzt): 7 Ohms
Supplier Device Package: DO-204AH (DO-35)
Part Status: Discontinued at Digi-Key
Power - Max: 500 mW
Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 200 mA
Current - Reverse Leakage @ Vr: 5 µA @ 4 V
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| 1N5235BDO35 |
|
Hersteller: Microsemi Corporation
Description: DIODE ZENER 6.8V 500MW DO35
Tolerance: ±5%
Packaging: Tape & Reel (TR)
Package / Case: DO-204AH, DO-35, Axial
Mounting Type: Through Hole
Operating Temperature: -65°C ~ 175°C
Voltage - Zener (Nom) (Vz): 6.8 V
Impedance (Max) (Zzt): 5 Ohms
Supplier Device Package: DO-35
Part Status: Active
Power - Max: 500 mW
Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 200 mA
Current - Reverse Leakage @ Vr: 3 µA @ 5 V
Description: DIODE ZENER 6.8V 500MW DO35
Tolerance: ±5%
Packaging: Tape & Reel (TR)
Package / Case: DO-204AH, DO-35, Axial
Mounting Type: Through Hole
Operating Temperature: -65°C ~ 175°C
Voltage - Zener (Nom) (Vz): 6.8 V
Impedance (Max) (Zzt): 5 Ohms
Supplier Device Package: DO-35
Part Status: Active
Power - Max: 500 mW
Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 200 mA
Current - Reverse Leakage @ Vr: 3 µA @ 5 V
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| 1N5236BDO35 |
|
Hersteller: Microsemi Corporation
Description: DIODE ZENER 7.5V 500MW DO35
Tolerance: ±5%
Packaging: Tape & Reel (TR)
Package / Case: DO-204AH, DO-35, Axial
Mounting Type: Through Hole
Operating Temperature: -65°C ~ 175°C
Voltage - Zener (Nom) (Vz): 7.5 V
Impedance (Max) (Zzt): 6 Ohms
Supplier Device Package: DO-204AH (DO-35)
Part Status: Active
Power - Max: 500 mW
Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 200 mA
Current - Reverse Leakage @ Vr: 3 µA @ 6 V
Description: DIODE ZENER 7.5V 500MW DO35
Tolerance: ±5%
Packaging: Tape & Reel (TR)
Package / Case: DO-204AH, DO-35, Axial
Mounting Type: Through Hole
Operating Temperature: -65°C ~ 175°C
Voltage - Zener (Nom) (Vz): 7.5 V
Impedance (Max) (Zzt): 6 Ohms
Supplier Device Package: DO-204AH (DO-35)
Part Status: Active
Power - Max: 500 mW
Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 200 mA
Current - Reverse Leakage @ Vr: 3 µA @ 6 V
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| 1N5239BDO35 |
|
Hersteller: Microsemi Corporation
Description: DIODE ZENER 9.1V 500MW DO35
Tolerance: ±5%
Packaging: Tape & Reel (TR)
Package / Case: DO-204AH, DO-35, Axial
Mounting Type: Through Hole
Operating Temperature: -65°C ~ 175°C
Voltage - Zener (Nom) (Vz): 9.1 V
Impedance (Max) (Zzt): 10 Ohms
Supplier Device Package: DO-204AH (DO-35)
Part Status: Active
Power - Max: 500 mW
Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 200 mA
Current - Reverse Leakage @ Vr: 3 µA @ 7 V
Description: DIODE ZENER 9.1V 500MW DO35
Tolerance: ±5%
Packaging: Tape & Reel (TR)
Package / Case: DO-204AH, DO-35, Axial
Mounting Type: Through Hole
Operating Temperature: -65°C ~ 175°C
Voltage - Zener (Nom) (Vz): 9.1 V
Impedance (Max) (Zzt): 10 Ohms
Supplier Device Package: DO-204AH (DO-35)
Part Status: Active
Power - Max: 500 mW
Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 200 mA
Current - Reverse Leakage @ Vr: 3 µA @ 7 V
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| 1N5245BDO35 |
|
Hersteller: Microsemi Corporation
Description: DIODE ZENER 15V 500MW DO35
Tolerance: ±5%
Packaging: Tape & Reel (TR)
Package / Case: DO-204AH, DO-35, Axial
Mounting Type: Through Hole
Operating Temperature: -65°C ~ 175°C
Voltage - Zener (Nom) (Vz): 15 V
Impedance (Max) (Zzt): 16 Ohms
Supplier Device Package: DO-204AH (DO-35)
Part Status: Active
Power - Max: 500 mW
Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 200 mA
Current - Reverse Leakage @ Vr: 100 nA @ 11 V
Description: DIODE ZENER 15V 500MW DO35
Tolerance: ±5%
Packaging: Tape & Reel (TR)
Package / Case: DO-204AH, DO-35, Axial
Mounting Type: Through Hole
Operating Temperature: -65°C ~ 175°C
Voltage - Zener (Nom) (Vz): 15 V
Impedance (Max) (Zzt): 16 Ohms
Supplier Device Package: DO-204AH (DO-35)
Part Status: Active
Power - Max: 500 mW
Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 200 mA
Current - Reverse Leakage @ Vr: 100 nA @ 11 V
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH