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SUD50N03-10 SUD50N03-10
Produktcode: 36248 		Vishay sud50n03-10.pdf Transistoren > MOSFET N-CH
Gehäuse: D-Pak
Uds,V: 30
Idd,A: 15
Rds(on), Ohm: 01.01.2000
Ciss, pF/Qg, nC: 3200/55
JHGF: SMD
verfügbar: 12 Stück
1+0.98 EUR
10+ 0.84 EUR
50N03-07 00+
auf Bestellung 229 Stücke:
Lieferzeit 21-28 Tag (e)
50N03LT PHILIPS
auf Bestellung 588 Stücke:
Lieferzeit 21-28 Tag (e)
50M030050N030 50M030050N030 Essentra Components Description: PAN SLOTTED SCREW, M3 X .5 THREA
Packaging: Bulk
Material: Nylon
Thread Size: M3x0.5
Type: Machine Screw
Length - Overall: 1.252" (31.80mm)
Length - Below Head: 1.181" (30.00mm)
Screw Head Type: Pan Head
Head Diameter: 0.220" (5.60mm)
Drive Type: Slotted
Part Status: Active
auf Bestellung 1400 Stücke:
Lieferzeit 21-28 Tag (e)
56+0.47 EUR
77+ 0.34 EUR
500+ 0.22 EUR
1000+ 0.2 EUR
Mindestbestellmenge: 56
50M030050N035 50M030050N035 Essentra Components skuAsset?mediaId=168388 Description: PAN SLOTTED SCREW, M3 X .5 THREA
Packaging: Bulk
Material: Nylon
Thread Size: M3x0.5
Type: Machine Screw
Length - Overall: 1.449" (36.80mm)
Length - Below Head: 1.378" (35.00mm)
Screw Head Type: Pan Head
Head Diameter: 0.220" (5.60mm)
Drive Type: Slotted
Part Status: Active
auf Bestellung 929 Stücke:
Lieferzeit 21-28 Tag (e)
67+0.39 EUR
89+ 0.29 EUR
119+ 0.22 EUR
Mindestbestellmenge: 67
50M100150N030 50M100150N030 Essentra Components skuAsset?mediaId=168522 Description: PAN SLOTTED SCREW, M10 X 1.5 THR
Packaging: Bulk
Material: Nylon
Thread Size: M10x1.5
Type: Machine Screw
Length - Overall: 1.417" (36.00mm)
Length - Below Head: 1.181" (30.00mm)
Screw Head Type: Pan Head
Head Diameter: 0.787" (20.00mm)
Drive Type: Slotted
Part Status: Active
auf Bestellung 500 Stücke:
Lieferzeit 21-28 Tag (e)
11+2.42 EUR
15+ 1.83 EUR
500+ 1.34 EUR
Mindestbestellmenge: 11
50M100150N035 50M100150N035 Essentra Components Description: PAN SLOTTED SCREW, M10 X 1.5 THR
Packaging: Bulk
Material: Nylon
Thread Size: M10x1.5
Type: Machine Screw
Length - Overall: 1.614" (41.00mm)
Length - Below Head: 1.378" (35.00mm)
Screw Head Type: Pan Head
Head Diameter: 0.787" (20.00mm)
Drive Type: Slotted
Part Status: Active
auf Bestellung 1000 Stücke:
Lieferzeit 21-28 Tag (e)
14+1.95 EUR
19+ 1.38 EUR
500+ 1 EUR
1000+ 0.94 EUR
Mindestbestellmenge: 14
BSC050N03LS G BSC050N03LS G Infineon Technologies Infineon_BSC050N03LS_DS_v02_01_en-1226245.pdf MOSFET N-Ch 30V 79A TDSON-8 OptiMOS 3
auf Bestellung 19475 Stücke:
Lieferzeit 14-28 Tag (e)
26+2.03 EUR
29+ 1.81 EUR
100+ 1.23 EUR
500+ 1.03 EUR
1000+ 0.88 EUR
2500+ 0.79 EUR
5000+ 0.74 EUR
Mindestbestellmenge: 26
BSC050N03LSGATMA1 BSC050N03LSGATMA1 Infineon Technologies 655bsc050n03ls_rev1.6.pdffolderiddb3a304412b407950112b408e8c90004fil.pdf Trans MOSFET N-CH 30V 18A 8-Pin TDSON EP T/R
auf Bestellung 5000 Stücke:
Lieferzeit 14-21 Tag (e)
BSC050N03LSGATMA1 BSC050N03LSGATMA1 Infineon Technologies Infineon_BSC050N03LS_DS_v02_01_en-1226245.pdf MOSFET N-Ch 30V 79A TDSON-8 OptiMOS 3
auf Bestellung 1118 Stücke:
Lieferzeit 14-28 Tag (e)
26+2.06 EUR
30+ 1.78 EUR
100+ 1.24 EUR
500+ 1.03 EUR
1000+ 0.78 EUR
5000+ 0.74 EUR
10000+ 0.71 EUR
Mindestbestellmenge: 26
BSC050N03LSGATMA1 BSC050N03LSGATMA1 Infineon Technologies Infineon-BSC050N03LS-DS-v02_01-en.pdf?fileId=db3a304412b407950112b4276b953c2b Description: MOSFET N-CH 30V 18A/80A TDSON
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 18A (Ta), 80A (Tc)
Rds On (Max) @ Id, Vgs: 5mOhm @ 30A, 10V
Power Dissipation (Max): 2.5W (Ta), 50W (Tc)
Vgs(th) (Max) @ Id: 2.2V @ 250µA
Supplier Device Package: PG-TDSON-8-5
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 35 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2800 pF @ 15 V
auf Bestellung 5000 Stücke:
Lieferzeit 21-28 Tag (e)
5000+0.74 EUR
Mindestbestellmenge: 5000
BSC050N03LSGATMA1 BSC050N03LSGATMA1 Infineon Technologies Infineon-BSC050N03LS-DS-v02_01-en.pdf?fileId=db3a304412b407950112b4276b953c2b Description: MOSFET N-CH 30V 18A/80A TDSON
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 18A (Ta), 80A (Tc)
Rds On (Max) @ Id, Vgs: 5mOhm @ 30A, 10V
Power Dissipation (Max): 2.5W (Ta), 50W (Tc)
Vgs(th) (Max) @ Id: 2.2V @ 250µA
Supplier Device Package: PG-TDSON-8-5
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 35 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2800 pF @ 15 V
auf Bestellung 11920 Stücke:
Lieferzeit 21-28 Tag (e)
13+2.03 EUR
15+ 1.77 EUR
100+ 1.23 EUR
500+ 1.02 EUR
1000+ 0.87 EUR
2000+ 0.78 EUR
Mindestbestellmenge: 13
BSC050N03LSGXT BSC050N03LSGXT Infineon Technologies Infineon-BSC050N03LS-DS-v02_01-en-770891.pdf MOSFET N-Ch 30V 79A TDSON-8 OptiMOS 3
auf Bestellung 5 Stücke:
Lieferzeit 14-28 Tag (e)
26+2.03 EUR
29+ 1.81 EUR
100+ 1.23 EUR
500+ 1.03 EUR
1000+ 0.88 EUR
2500+ 0.79 EUR
5000+ 0.74 EUR
Mindestbestellmenge: 26
BSC150N03LD G BSC150N03LD G Infineon Technologies BSC150N03LD_rev1_4-1730932.pdf MOSFET N-Ch 30V 20A TDSON-8 OptiMOS 3
auf Bestellung 455 Stücke:
Lieferzeit 14-28 Tag (e)
22+2.42 EUR
27+ 2 EUR
100+ 1.55 EUR
500+ 1.32 EUR
1000+ 1.07 EUR
2500+ 1.01 EUR
5000+ 0.96 EUR
Mindestbestellmenge: 22
BSC150N03LDGATMA1 BSC150N03LDGATMA1 Infineon Technologies BSC150N03LD_rev1_4-1730932.pdf MOSFET N-Ch 30V 20A TDSON-8 OptiMOS 3
auf Bestellung 2725 Stücke:
Lieferzeit 14-28 Tag (e)
22+2.39 EUR
32+ 1.64 EUR
100+ 1.45 EUR
500+ 1.25 EUR
1000+ 1 EUR
5000+ 0.95 EUR
Mindestbestellmenge: 22
BSC150N03LDGATMA1 BSC150N03LDGATMA1 Infineon Technologies BSC150N03LD_rev1.4.pdf?folderId=db3a304313b8b5a60113cee8ed2a02db&fileId=db3a304316f66ee80116fb504a5d729f Description: MOSFET 2N-CH 30V 8A 8TDSON
Packaging: Cut Tape (CT)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 26W
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 8A
Input Capacitance (Ciss) (Max) @ Vds: 1100pF @ 15V
Rds On (Max) @ Id, Vgs: 15mOhm @ 20A, 10V
Gate Charge (Qg) (Max) @ Vgs: 13.2nC @ 10V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 2.2V @ 250µA
Supplier Device Package: PG-TDSON-8-4
Part Status: Active
auf Bestellung 50701 Stücke:
Lieferzeit 21-28 Tag (e)
11+2.42 EUR
14+ 1.99 EUR
100+ 1.55 EUR
500+ 1.31 EUR
1000+ 1.07 EUR
2000+ 1 EUR
Mindestbestellmenge: 11
BSC150N03LDGATMA1 BSC150N03LDGATMA1 Infineon Technologies BSC150N03LD_rev1.4.pdf?folderId=db3a304313b8b5a60113cee8ed2a02db&fileId=db3a304316f66ee80116fb504a5d729f Description: MOSFET 2N-CH 30V 8A 8TDSON
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 26W
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 8A
Input Capacitance (Ciss) (Max) @ Vds: 1100pF @ 15V
Rds On (Max) @ Id, Vgs: 15mOhm @ 20A, 10V
Gate Charge (Qg) (Max) @ Vgs: 13.2nC @ 10V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 2.2V @ 250µA
Supplier Device Package: PG-TDSON-8-4
Part Status: Active
auf Bestellung 50000 Stücke:
Lieferzeit 21-28 Tag (e)
5000+0.96 EUR
10000+ 0.91 EUR
Mindestbestellmenge: 5000
BSF050N03LQ3G Infineon Technologies INFNS16729-1.pdf?t.download=true&u=5oefqw Description: N-CHANNEL POWER MOSFET
Packaging: Bulk
Package / Case: DirectFET™ Isometric MX
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 15A (Ta), 60A (Tc)
Rds On (Max) @ Id, Vgs: 5mOhm @ 20A, 10V
Power Dissipation (Max): 2.2W (Ta), 28W (Tc)
Vgs(th) (Max) @ Id: 2.2V @ 250µA
Supplier Device Package: MG-WDSON-2
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 42 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3000 pF @ 15 V
auf Bestellung 14925 Stücke:
Lieferzeit 21-28 Tag (e)
770+0.94 EUR
Mindestbestellmenge: 770
BSO150N03MD G BSO150N03MD G Infineon Technologies BSO150N03MD_rev1_1-1225816.pdf MOSFET N-Ch 30V 9.3A DSO-8 OptiMOS 3M
auf Bestellung 5859 Stücke:
Lieferzeit 14-28 Tag (e)
19+2.86 EUR
23+ 2.34 EUR
100+ 1.82 EUR
500+ 1.55 EUR
1000+ 1.26 EUR
2500+ 1.19 EUR
5000+ 1.13 EUR
Mindestbestellmenge: 19
BSO150N03MDGXUMA1 BSO150N03MDGXUMA1 Infineon Technologies BSO150N03MD_rev1_1-1225816.pdf MOSFET N-Ch 30V 9.3A DSO-8 OptiMOS 3M
auf Bestellung 9844 Stücke:
Lieferzeit 14-28 Tag (e)
25+2.15 EUR
29+ 1.82 EUR
100+ 1.48 EUR
500+ 1.32 EUR
1000+ 1.13 EUR
2500+ 1.12 EUR
Mindestbestellmenge: 25
BSO150N03MDGXUMA1 BSO150N03MDGXUMA1 Infineon Technologies bso150n03md_rev1.0.pdf Trans MOSFET N-CH 30V 8A 8-Pin DSO T/R
auf Bestellung 2500 Stücke:
Lieferzeit 14-21 Tag (e)
BSO150N03MDGXUMA1 BSO150N03MDGXUMA1 Infineon Technologies BSO150N03MD_rev1.0.pdf?folderId=db3a304313d846880113d91d60c500c4&fileId=db3a30431b0626df011b0d8d11687e4c Description: MOSFET 2N-CH 30V 8A 8DSO
Packaging: Cut Tape (CT)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 1.4W
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 8A
Input Capacitance (Ciss) (Max) @ Vds: 1300pF @ 15V
Rds On (Max) @ Id, Vgs: 15mOhm @ 9.3A, 10V
Gate Charge (Qg) (Max) @ Vgs: 17nC @ 10V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 2V @ 250µA
Supplier Device Package: PG-DSO-8
Part Status: Active
auf Bestellung 11595 Stücke:
Lieferzeit 21-28 Tag (e)
10+2.83 EUR
12+ 2.33 EUR
100+ 1.81 EUR
500+ 1.53 EUR
1000+ 1.25 EUR
Mindestbestellmenge: 10
BSO150N03MDGXUMA1 BSO150N03MDGXUMA1 Infineon Technologies BSO150N03MD_rev1.0.pdf?folderId=db3a304313d846880113d91d60c500c4&fileId=db3a30431b0626df011b0d8d11687e4c Description: MOSFET 2N-CH 30V 8A 8DSO
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 1.4W
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 8A
Input Capacitance (Ciss) (Max) @ Vds: 1300pF @ 15V
Rds On (Max) @ Id, Vgs: 15mOhm @ 9.3A, 10V
Gate Charge (Qg) (Max) @ Vgs: 17nC @ 10V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 2V @ 250µA
Supplier Device Package: PG-DSO-8
Part Status: Active
auf Bestellung 7500 Stücke:
Lieferzeit 21-28 Tag (e)
2500+1.18 EUR
5000+ 1.12 EUR
Mindestbestellmenge: 2500
BSO350N03 BSO350N03 Infineon Technologies BSO350N03.pdf Description: MOSFET 2N-CH 30V 5A 8DSO
Packaging: Bulk
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 1.4W
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 5A
Input Capacitance (Ciss) (Max) @ Vds: 480pF @ 15V
Rds On (Max) @ Id, Vgs: 35mOhm @ 6A, 10V
Gate Charge (Qg) (Max) @ Vgs: 3.7nC @ 5V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 2V @ 6µA
Supplier Device Package: PG-DSO-8
auf Bestellung 1832 Stücke:
Lieferzeit 21-28 Tag (e)
742+0.96 EUR
Mindestbestellmenge: 742
BSZ050N03LS G BSZ050N03LS G Infineon Technologies Infineon_BSZ050N03LS_G_DataSheet_v02_00_EN-3360770.pdf MOSFET N-Ch 30V 40A TSDSON-8 OptiMOS 3
auf Bestellung 8687 Stücke:
Lieferzeit 14-28 Tag (e)
25+2.08 EUR
29+ 1.84 EUR
100+ 1.25 EUR
500+ 1.05 EUR
1000+ 0.89 EUR
2500+ 0.81 EUR
5000+ 0.75 EUR
Mindestbestellmenge: 25
BSZ050N03LSGATMA1 BSZ050N03LSGATMA1 Infineon Technologies 1510bsz050n03lsg_rev1.0.pdffolderiddb3a304313b8b5a60113cee8ed2a02dbfi.pdf Trans MOSFET N-CH 30V 16A 8-Pin TSDSON EP T/R
auf Bestellung 5000 Stücke:
Lieferzeit 14-21 Tag (e)
BSZ050N03LSGATMA1 BSZ050N03LSGATMA1 Infineon Technologies Infineon_BSZ050N03LS_G_DataSheet_v02_00_EN-3360770.pdf MOSFET N-Ch 30V 40A TSDSON-8 OptiMOS 3
auf Bestellung 10000 Stücke:
Lieferzeit 14-28 Tag (e)
38+1.4 EUR
42+ 1.24 EUR
100+ 0.96 EUR
500+ 0.76 EUR
1000+ 0.72 EUR
Mindestbestellmenge: 38
BSZ050N03LSGATMA1 BSZ050N03LSGATMA1 Infineon Technologies BSZ050N03LSG_rev1.1.pdf?folderId=db3a304313b8b5a60113cee8ed2a02db&fileId=db3a304313b8b5a60113d3f6944e03ee Description: MOSFET N-CH 30V 16A/40A 8TSDSON
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 16A (Ta), 40A (Tc)
Rds On (Max) @ Id, Vgs: 5mOhm @ 20A, 10V
Power Dissipation (Max): 2.1W (Ta), 50W (Tc)
Vgs(th) (Max) @ Id: 2.2V @ 250µA
Supplier Device Package: PG-TSDSON-8
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 35 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2800 pF @ 15 V
auf Bestellung 477 Stücke:
Lieferzeit 21-28 Tag (e)
13+2.05 EUR
15+ 1.79 EUR
100+ 1.24 EUR
Mindestbestellmenge: 13
BSZ050N03MS G BSZ050N03MS G Infineon Technologies Infineon_BSZ050N03MS_G_DataSheet_v02_00_EN-3360715.pdf MOSFET N-Ch 30V 40A TSDSON-8 OptiMOS 3M
auf Bestellung 9762 Stücke:
Lieferzeit 14-28 Tag (e)
25+2.08 EUR
29+ 1.81 EUR
100+ 1.25 EUR
500+ 1.05 EUR
1000+ 0.79 EUR
5000+ 0.72 EUR
Mindestbestellmenge: 25
BSZ050N03MSGATMA1 BSZ050N03MSGATMA1 Infineon Technologies 1509bsz050n03msg_rev1.1.pdffolderiddb3a304313d846880113d91d60c500c4fi.pdf Trans MOSFET N-CH 30V 15A 8-Pin TSDSON EP T/R
auf Bestellung 5000 Stücke:
Lieferzeit 14-21 Tag (e)
BSZ050N03MSGATMA1 BSZ050N03MSGATMA1 Infineon Technologies BSZ050N03MSG_rev1.4.pdf?folderId=db3a304313d846880113d91d60c500c4&fileId=db3a304313d846880113ddea0e8802e4 Description: MOSFET N-CH 30V 15A/40A 8TSDSON
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 15A (Ta), 40A (Tc)
Rds On (Max) @ Id, Vgs: 4.5mOhm @ 20A, 10V
Power Dissipation (Max): 2.1W (Ta), 48W (Tc)
Vgs(th) (Max) @ Id: 2V @ 250µA
Supplier Device Package: PG-TSDSON-8
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 46 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3600 pF @ 15 V
auf Bestellung 5000 Stücke:
Lieferzeit 21-28 Tag (e)
5000+0.75 EUR
Mindestbestellmenge: 5000
BSZ050N03MSGATMA1 BSZ050N03MSGATMA1 Infineon Technologies BSZ050N03MSG_rev1.4.pdf?folderId=db3a304313d846880113d91d60c500c4&fileId=db3a304313d846880113ddea0e8802e4 Description: MOSFET N-CH 30V 15A/40A 8TSDSON
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 15A (Ta), 40A (Tc)
Rds On (Max) @ Id, Vgs: 4.5mOhm @ 20A, 10V
Power Dissipation (Max): 2.1W (Ta), 48W (Tc)
Vgs(th) (Max) @ Id: 2V @ 250µA
Supplier Device Package: PG-TSDSON-8
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 46 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3600 pF @ 15 V
auf Bestellung 9663 Stücke:
Lieferzeit 21-28 Tag (e)
13+2.05 EUR
15+ 1.79 EUR
100+ 1.24 EUR
500+ 1.04 EUR
1000+ 0.88 EUR
2000+ 0.79 EUR
Mindestbestellmenge: 13
DHD50N03 WXDH Transistor N-Channel MOSFET; 30V; 20V; 7.5mOhm; 50A; 60W; -55°C ~ 175°C; Similar to: IRLR8729, IRLR8729TR, IRLR8729TRL DHD50N03 DONGHAI TDHD50n03
Anzahl je Verpackung: 75 Stücke
auf Bestellung 95 Stücke:
Lieferzeit 7-14 Tag (e)
150+0.36 EUR
Mindestbestellmenge: 150
DIT150N03 DIT150N03 DIOTEC SEMICONDUCTOR dit150n03.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 105A; Idm: 600A; 130W; TO220AB
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 105A
Pulsed drain current: 600A
Power dissipation: 130W
Case: TO220AB
Gate-source voltage: ±20V
On-state resistance: 2.3mΩ
Mounting: THT
Gate charge: 38nC
Kind of package: tube
Kind of channel: enhanced
Heatsink thickness: max. 1.2mm
auf Bestellung 878 Stücke:
Lieferzeit 14-21 Tag (e)
69+1.04 EUR
76+ 0.95 EUR
85+ 0.84 EUR
99+ 0.73 EUR
105+ 0.69 EUR
Mindestbestellmenge: 69
DIT150N03 DIT150N03 Diotec Semiconductor dit150n03.pdf MOSFET MOSFET, TO-220AB, 30V, 150A, 175C, N
auf Bestellung 980 Stücke:
Lieferzeit 14-28 Tag (e)
11+4.99 EUR
14+ 3.9 EUR
100+ 2.05 EUR
500+ 2.03 EUR
1000+ 1.7 EUR
2500+ 1.54 EUR
5000+ 1.44 EUR
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G050N03S G050N03S Goford Semiconductor GOFORD-G050N03S.pdf Description: MOSFET N-CH 30V 18A SOP-8
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 18A (Tc)
Rds On (Max) @ Id, Vgs: 5mOhm @ 10A, 10V
Power Dissipation (Max): 2.1W (Tc)
Vgs(th) (Max) @ Id: 2.4V @ 250µA
Supplier Device Package: 8-SOP
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
auf Bestellung 20000 Stücke:
Lieferzeit 21-28 Tag (e)
4000+0.5 EUR
16000+ 0.46 EUR
Mindestbestellmenge: 4000
G050N03S G050N03S Goford Semiconductor GOFORD-G050N03S.pdf Description: N30V, 18A,RD<5M@10V,VTH1.1V~2.4V
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 18A (Tc)
Rds On (Max) @ Id, Vgs: 5mOhm @ 10A, 10V
Power Dissipation (Max): 2.1W (Tc)
Vgs(th) (Max) @ Id: 2.4V @ 250µA
Supplier Device Package: 8-SOP
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 37 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1714 pF @ 15 V
auf Bestellung 4000 Stücke:
Lieferzeit 21-28 Tag (e)
4000+0.62 EUR
Mindestbestellmenge: 4000
G250N03IE G250N03IE Goford Semiconductor GOFORD-G250N03IE.pdf Description: MOSFET N-CH ESD 30V 5.3A SOT-23
Packaging: Tape & Reel (TR)
Package / Case: SOT-23-6
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 5.3A (Tc)
Rds On (Max) @ Id, Vgs: 25mOhm @ 4A, 10V
Power Dissipation (Max): 1.4W (Tc)
Vgs(th) (Max) @ Id: 1.3V @ 250µA
Supplier Device Package: SOT-23-6L
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 10V
Vgs (Max): ±10V
auf Bestellung 18000 Stücke:
Lieferzeit 21-28 Tag (e)
3000+0.094 EUR
15000+ 0.086 EUR
Mindestbestellmenge: 3000
G250N03IE G250N03IE Goford Semiconductor GOFORD-G250N03IE.pdf Description: N30V,ESD 5.3A,RD<25M@10V,VTH0.5V
Packaging: Cut Tape (CT)
Package / Case: SOT-23-6
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 5.3A (Tc)
Rds On (Max) @ Id, Vgs: 25mOhm @ 4A, 10V
Power Dissipation (Max): 1.4W (Tc)
Vgs(th) (Max) @ Id: 1.3V @ 250µA
Supplier Device Package: SOT-23-6L
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 10V
Vgs (Max): ±10V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 9.1 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 573 pF @ 15 V
auf Bestellung 2830 Stücke:
Lieferzeit 21-28 Tag (e)
31+0.86 EUR
44+ 0.6 EUR
100+ 0.3 EUR
500+ 0.25 EUR
1000+ 0.18 EUR
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G50N03D5 G50N03D5 Goford Semiconductor GOFORD-G50N03D5.pdf Description: N30V,RD(MAX)<4.5M@10V,RD(MAX)<8M
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 50A (Tc)
Rds On (Max) @ Id, Vgs: 4.5mOhm @ 20A, 10V
Power Dissipation (Max): 20W (Tc)
Vgs(th) (Max) @ Id: 2.4V @ 250µA
Supplier Device Package: 8-DFN (4.9x5.75)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 38.4 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1784 pF @ 15 V
auf Bestellung 4998 Stücke:
Lieferzeit 21-28 Tag (e)
18+1.46 EUR
21+ 1.26 EUR
100+ 0.87 EUR
500+ 0.73 EUR
1000+ 0.62 EUR
2000+ 0.55 EUR
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G50N03D5 G50N03D5 Goford Semiconductor GOFORD-G50N03D5.pdf Description: MOSFET N-CH 30V 50A DFN5*6-8L
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 50A (Tc)
Rds On (Max) @ Id, Vgs: 4.5mOhm @ 20A, 10V
Power Dissipation (Max): 20W (Tc)
Vgs(th) (Max) @ Id: 2.4V @ 250µA
Supplier Device Package: 8-DFN (4.9x5.75)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
auf Bestellung 10000 Stücke:
Lieferzeit 21-28 Tag (e)
5000+0.39 EUR
Mindestbestellmenge: 5000
G50N03J G50N03J Goford Semiconductor GOFORD-G50N03J.pdf Description: N30V,RD(MAX)<7M@10V,RD(MAX)<12M@
Packaging: Tube
Package / Case: TO-251-3 Stub Leads, IPak
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 65A (Tc)
Rds On (Max) @ Id, Vgs: 7mOhm @ 20A, 10V
Power Dissipation (Max): 48W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: TO-251
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 16.6 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1255 pF @ 15 V
auf Bestellung 3486 Stücke:
Lieferzeit 21-28 Tag (e)
19+1.43 EUR
21+ 1.25 EUR
100+ 0.86 EUR
500+ 0.72 EUR
1000+ 0.61 EUR
2000+ 0.55 EUR
Mindestbestellmenge: 19
G50N03J G50N03J Goford Semiconductor GOFORD-G50N03J.pdf Description: MOSFET N-CH 30V 65A TO-251
Packaging: Tube
Package / Case: TO-251-3 Stub Leads, IPak
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 65A (Tc)
Rds On (Max) @ Id, Vgs: 7mOhm @ 20A, 10V
Power Dissipation (Max): 48W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: TO-251
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
auf Bestellung 3000 Stücke:
Lieferzeit 21-28 Tag (e)
3000+0.35 EUR
Mindestbestellmenge: 3000
G50N03K G50N03K Goford Semiconductor GOFORD-G50N03K.pdf Description: N30V,RD(MAX)<7M@10V,RD(MAX)<12M@
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 65A (Tc)
Rds On (Max) @ Id, Vgs: 7mOhm @ 20A, 10V
Power Dissipation (Max): 48W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: TO-252 (DPAK)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 16.6 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 950 pF @ 15 V
auf Bestellung 1983 Stücke:
Lieferzeit 21-28 Tag (e)
18+1.48 EUR
21+ 1.27 EUR
100+ 0.88 EUR
500+ 0.69 EUR
1000+ 0.56 EUR
Mindestbestellmenge: 18
G50N03K G50N03K Goford Semiconductor GOFORD-G50N03K.pdf Description: MOSFET N-CH 30V 65A TO-252
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 65A (Tc)
Rds On (Max) @ Id, Vgs: 7mOhm @ 20A, 10V
Power Dissipation (Max): 48W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: TO-252
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
auf Bestellung 80000 Stücke:
Lieferzeit 21-28 Tag (e)
2500+0.37 EUR
15000+ 0.35 EUR
30000+ 0.31 EUR
Mindestbestellmenge: 2500
G50N03K G50N03K Goford Semiconductor GOFORD-G50N03K.pdf Description: N30V,RD(MAX)<7M@10V,RD(MAX)<12M@
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 65A (Tc)
Rds On (Max) @ Id, Vgs: 7mOhm @ 20A, 10V
Power Dissipation (Max): 48W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: TO-252 (DPAK)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 16.6 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 950 pF @ 15 V
auf Bestellung 2500 Stücke:
Lieferzeit 21-28 Tag (e)
2500+0.5 EUR
Mindestbestellmenge: 2500
IPD050N03L G IPD050N03L G Infineon Technologies Infineon_IPD050N03LG_DataSheet_v02_01_EN-3362524.pdf MOSFET N-Ch 30V 50A DPAK-2 OptiMOS 3
auf Bestellung 2431 Stücke:
Lieferzeit 14-28 Tag (e)
19+2.76 EUR
23+ 2.26 EUR
100+ 1.76 EUR
500+ 1.5 EUR
1000+ 1.22 EUR
2500+ 1.14 EUR
5000+ 1.09 EUR
Mindestbestellmenge: 19
IPD050N03LGATMA1 IPD050N03LGATMA1 INFINEON TECHNOLOGIES IPD050N03LG-DTE.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 50A; 68W; PG-TO252-3
Type of transistor: N-MOSFET
Technology: OptiMOS™ 3
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 50A
Power dissipation: 68W
Case: PG-TO252-3
Gate-source voltage: ±20V
On-state resistance: 5mΩ
Mounting: SMD
Kind of channel: enhanced
auf Bestellung 2500 Stücke:
Lieferzeit 14-21 Tag (e)
67+1.07 EUR
88+ 0.82 EUR
100+ 0.72 EUR
115+ 0.62 EUR
122+ 0.59 EUR
500+ 0.58 EUR
Mindestbestellmenge: 67
IPD050N03LGATMA1 IPD050N03LGATMA1 INFINEON TECHNOLOGIES IPD050N03LG-DTE.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 50A; 68W; PG-TO252-3
Type of transistor: N-MOSFET
Technology: OptiMOS™ 3
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 50A
Power dissipation: 68W
Case: PG-TO252-3
Gate-source voltage: ±20V
On-state resistance: 5mΩ
Mounting: SMD
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
auf Bestellung 2500 Stücke:
Lieferzeit 7-14 Tag (e)
67+1.07 EUR
88+ 0.82 EUR
100+ 0.72 EUR
115+ 0.62 EUR
122+ 0.59 EUR
500+ 0.58 EUR
Mindestbestellmenge: 67
IPD050N03LGATMA1 IPD050N03LGATMA1 Infineon Technologies Infineon_IPD050N03LG_DataSheet_v02_01_EN-3362524.pdf MOSFET N-Ch 30V 50A DPAK-2 OptiMOS 3
auf Bestellung 4376 Stücke:
Lieferzeit 14-28 Tag (e)
26+2.03 EUR
31+ 1.73 EUR
100+ 1.45 EUR
500+ 1.32 EUR
1000+ 1.13 EUR
2500+ 1.08 EUR
Mindestbestellmenge: 26
IPD050N03LGATMA1 IPD050N03LGATMA1 Infineon Technologies 3575ipd050n03lg_rev2.0._pdf.pdffolderiddb3a304313b8b5a60113cee8763b02.pdf Trans MOSFET N-CH 30V 50A 3-Pin(2+Tab) DPAK T/R
auf Bestellung 15000 Stücke:
Lieferzeit 14-21 Tag (e)
IPD050N03LGATMA1 IPD050N03LGATMA1 Infineon Technologies Infineon-IPD050N03LG-DS-v02_00-en.pdf?folderId=5546d4694909da4801490a07012f053b&fileId=db3a30432313ff5e01239e47dbfe701f Description: MOSFET N-CH 30V 50A TO252-3
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 50A (Tc)
Rds On (Max) @ Id, Vgs: 5mOhm @ 30A, 10V
Power Dissipation (Max): 68W (Tc)
Vgs(th) (Max) @ Id: 2.2V @ 250µA
Supplier Device Package: PG-TO252-3-11
Part Status: Not For New Designs
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 31 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3200 pF @ 15 V
auf Bestellung 12500 Stücke:
Lieferzeit 21-28 Tag (e)
2500+1.14 EUR
5000+ 1.08 EUR
12500+ 1.03 EUR
Mindestbestellmenge: 2500
IPD050N03LGATMA1 IPD050N03LGATMA1 Infineon Technologies Infineon-IPD050N03LG-DS-v02_00-en.pdf?folderId=5546d4694909da4801490a07012f053b&fileId=db3a30432313ff5e01239e47dbfe701f Description: MOSFET N-CH 30V 50A TO252-3
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 50A (Tc)
Rds On (Max) @ Id, Vgs: 5mOhm @ 30A, 10V
Power Dissipation (Max): 68W (Tc)
Vgs(th) (Max) @ Id: 2.2V @ 250µA
Supplier Device Package: PG-TO252-3-11
Part Status: Not For New Designs
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 31 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3200 pF @ 15 V
auf Bestellung 13512 Stücke:
Lieferzeit 21-28 Tag (e)
10+2.73 EUR
12+ 2.25 EUR
100+ 1.75 EUR
500+ 1.48 EUR
1000+ 1.21 EUR
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IPD50N03S2-07 IPD50N03S2-07 Infineon Technologies Infineon_IPD50N03S2_07_DS_v01_00_en-3360291.pdf MOSFET N-Ch 30V 50A DPAK-2 OptiMOS
auf Bestellung 7454 Stücke:
Lieferzeit 14-28 Tag (e)
14+3.93 EUR
16+ 3.25 EUR
100+ 2.59 EUR
250+ 2.39 EUR
500+ 2.17 EUR
1000+ 1.86 EUR
2500+ 1.77 EUR
Mindestbestellmenge: 14
IPD50N03S207ATMA1 IPD50N03S207ATMA1 Infineon Technologies IPD50N03S2-07_green.pdf?folderId=db3a304412b407950112b426f7da3b27&fileId=db3a304412b407950112b4270d5a3b72 Description: MOSFET N-CH 30V 50A TO252-3
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 50A (Tc)
Rds On (Max) @ Id, Vgs: 7.3mOhm @ 50A, 10V
Power Dissipation (Max): 136W (Tc)
Vgs(th) (Max) @ Id: 4V @ 85µA
Supplier Device Package: PG-TO252-3-11
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 68 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2000 pF @ 25 V
auf Bestellung 2496 Stücke:
Lieferzeit 21-28 Tag (e)
7+3.9 EUR
10+ 3.24 EUR
100+ 2.58 EUR
500+ 2.18 EUR
1000+ 1.85 EUR
Mindestbestellmenge: 7
IPD50N03S2L-06 IPD50N03S2L-06 Infineon Technologies Infineon_IPD50N03S2L_06_DS_v01_00_en-1227022.pdf MOSFET N-Ch 30V 50A DPAK-2 OptiMOS
auf Bestellung 1975 Stücke:
Lieferzeit 14-28 Tag (e)
14+3.8 EUR
17+ 3.17 EUR
100+ 2.51 EUR
250+ 2.44 EUR
500+ 2.12 EUR
1000+ 1.8 EUR
2500+ 1.75 EUR
Mindestbestellmenge: 14
IPD50N03S2L06ATMA1 IPD50N03S2L06ATMA1 Infineon Technologies Infineon-IPD50N03S2L_06-DS-v01_00-en.pdf?folderId=db3a304412b407950112b426f7da3b27&fileId=db3a304412b407950112b4270cfc3b6e&ack=t Description: MOSFET N-CH 30V 50A TO252-31
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 50A (Tc)
Rds On (Max) @ Id, Vgs: 6.4mOhm @ 50A, 10V
Power Dissipation (Max): 136W (Tc)
Vgs(th) (Max) @ Id: 2V @ 85µA
Supplier Device Package: PG-TO252-3-11
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 68 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1900 pF @ 25 V
Grade: Automotive
Qualification: AEC-Q101
auf Bestellung 2321 Stücke:
Lieferzeit 21-28 Tag (e)
7+3.98 EUR
10+ 3.31 EUR
100+ 2.63 EUR
500+ 2.23 EUR
1000+ 1.89 EUR
Mindestbestellmenge: 7
IPD50N03S4L-06 IPD50N03S4L-06 Infineon Technologies Infineon_IPD50N03S4L_06_DS_v01_01_en-3360018.pdf MOSFET N-Ch 30V 50A DPAK-2 OptiMOS-T2
auf Bestellung 4941 Stücke:
Lieferzeit 14-28 Tag (e)
20+2.6 EUR
28+ 1.91 EUR
100+ 1.44 EUR
500+ 1.24 EUR
1000+ 1.16 EUR
2500+ 1.08 EUR
5000+ 1.03 EUR
Mindestbestellmenge: 20
IPD50N03S4L06ATMA1 IPD50N03S4L06ATMA1 Infineon Technologies ipd50n03s4l-06_ds_10.pdf Trans MOSFET N-CH 30V 50A Automotive 3-Pin(2+Tab) DPAK T/R
auf Bestellung 2500 Stücke:
Lieferzeit 14-21 Tag (e)
IPD50N03S4L06ATMA1 IPD50N03S4L06ATMA1 Infineon Technologies INFNS15258-1.pdf?t.download=true&u=5oefqw Description: MOSFET N-CH 30V 50A TO252-31
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 50A (Tc)
Rds On (Max) @ Id, Vgs: 5.5mOhm @ 50A, 10V
Power Dissipation (Max): 56W (Tc)
Vgs(th) (Max) @ Id: 2.2V @ 20µA
Supplier Device Package: PG-TO252-3-11
Grade: Automotive
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±16V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 31 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2330 pF @ 25 V
Qualification: AEC-Q101
auf Bestellung 7500 Stücke:
Lieferzeit 21-28 Tag (e)
SUD50N03-10
Produktcode: 36248		 sud50n03-10.pdf
SUD50N03-10
Hersteller: Vishay
Transistoren > MOSFET N-CH
Gehäuse: D-Pak
Uds,V: 30
Idd,A: 15
Rds(on), Ohm: 01.01.2000
Ciss, pF/Qg, nC: 3200/55
JHGF: SMD
verfügbar: 12 Stück
Anzahl Preis ohne MwSt
1+0.98 EUR
10+ 0.84 EUR
50N03-07
00+
auf Bestellung 229 Stücke:
Lieferzeit 21-28 Tag (e)
50N03LT
Hersteller: PHILIPS
auf Bestellung 588 Stücke:
Lieferzeit 21-28 Tag (e)
50M030050N030
50M030050N030
Hersteller: Essentra Components
Description: PAN SLOTTED SCREW, M3 X .5 THREA
Packaging: Bulk
Material: Nylon
Thread Size: M3x0.5
Type: Machine Screw
Length - Overall: 1.252" (31.80mm)
Length - Below Head: 1.181" (30.00mm)
Screw Head Type: Pan Head
Head Diameter: 0.220" (5.60mm)
Drive Type: Slotted
Part Status: Active
auf Bestellung 1400 Stücke:
Lieferzeit 21-28 Tag (e)
Anzahl Preis ohne MwSt
56+0.47 EUR
77+ 0.34 EUR
500+ 0.22 EUR
1000+ 0.2 EUR
Mindestbestellmenge: 56
50M030050N035 skuAsset?mediaId=168388
50M030050N035
Hersteller: Essentra Components
Description: PAN SLOTTED SCREW, M3 X .5 THREA
Packaging: Bulk
Material: Nylon
Thread Size: M3x0.5
Type: Machine Screw
Length - Overall: 1.449" (36.80mm)
Length - Below Head: 1.378" (35.00mm)
Screw Head Type: Pan Head
Head Diameter: 0.220" (5.60mm)
Drive Type: Slotted
Part Status: Active
auf Bestellung 929 Stücke:
Lieferzeit 21-28 Tag (e)
Anzahl Preis ohne MwSt
67+0.39 EUR
89+ 0.29 EUR
119+ 0.22 EUR
Mindestbestellmenge: 67
50M100150N030 skuAsset?mediaId=168522
50M100150N030
Hersteller: Essentra Components
Description: PAN SLOTTED SCREW, M10 X 1.5 THR
Packaging: Bulk
Material: Nylon
Thread Size: M10x1.5
Type: Machine Screw
Length - Overall: 1.417" (36.00mm)
Length - Below Head: 1.181" (30.00mm)
Screw Head Type: Pan Head
Head Diameter: 0.787" (20.00mm)
Drive Type: Slotted
Part Status: Active
auf Bestellung 500 Stücke:
Lieferzeit 21-28 Tag (e)
Anzahl Preis ohne MwSt
11+2.42 EUR
15+ 1.83 EUR
500+ 1.34 EUR
Mindestbestellmenge: 11
50M100150N035
50M100150N035
Hersteller: Essentra Components
Description: PAN SLOTTED SCREW, M10 X 1.5 THR
Packaging: Bulk
Material: Nylon
Thread Size: M10x1.5
Type: Machine Screw
Length - Overall: 1.614" (41.00mm)
Length - Below Head: 1.378" (35.00mm)
Screw Head Type: Pan Head
Head Diameter: 0.787" (20.00mm)
Drive Type: Slotted
Part Status: Active
auf Bestellung 1000 Stücke:
Lieferzeit 21-28 Tag (e)
Anzahl Preis ohne MwSt
14+1.95 EUR
19+ 1.38 EUR
500+ 1 EUR
1000+ 0.94 EUR
Mindestbestellmenge: 14
BSC050N03LS G Infineon_BSC050N03LS_DS_v02_01_en-1226245.pdf
BSC050N03LS G
Hersteller: Infineon Technologies
MOSFET N-Ch 30V 79A TDSON-8 OptiMOS 3
auf Bestellung 19475 Stücke:
Lieferzeit 14-28 Tag (e)
Anzahl Preis ohne MwSt
26+2.03 EUR
29+ 1.81 EUR
100+ 1.23 EUR
500+ 1.03 EUR
1000+ 0.88 EUR
2500+ 0.79 EUR
5000+ 0.74 EUR
Mindestbestellmenge: 26
BSC050N03LSGATMA1 655bsc050n03ls_rev1.6.pdffolderiddb3a304412b407950112b408e8c90004fil.pdf
BSC050N03LSGATMA1
Hersteller: Infineon Technologies
Trans MOSFET N-CH 30V 18A 8-Pin TDSON EP T/R
auf Bestellung 5000 Stücke:
Lieferzeit 14-21 Tag (e)
BSC050N03LSGATMA1 Infineon_BSC050N03LS_DS_v02_01_en-1226245.pdf
BSC050N03LSGATMA1
Hersteller: Infineon Technologies
MOSFET N-Ch 30V 79A TDSON-8 OptiMOS 3
auf Bestellung 1118 Stücke:
Lieferzeit 14-28 Tag (e)
Anzahl Preis ohne MwSt
26+2.06 EUR
30+ 1.78 EUR
100+ 1.24 EUR
500+ 1.03 EUR
1000+ 0.78 EUR
5000+ 0.74 EUR
10000+ 0.71 EUR
Mindestbestellmenge: 26
BSC050N03LSGATMA1 Infineon-BSC050N03LS-DS-v02_01-en.pdf?fileId=db3a304412b407950112b4276b953c2b
BSC050N03LSGATMA1
Hersteller: Infineon Technologies
Description: MOSFET N-CH 30V 18A/80A TDSON
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 18A (Ta), 80A (Tc)
Rds On (Max) @ Id, Vgs: 5mOhm @ 30A, 10V
Power Dissipation (Max): 2.5W (Ta), 50W (Tc)
Vgs(th) (Max) @ Id: 2.2V @ 250µA
Supplier Device Package: PG-TDSON-8-5
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 35 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2800 pF @ 15 V
auf Bestellung 5000 Stücke:
Lieferzeit 21-28 Tag (e)
Anzahl Preis ohne MwSt
5000+0.74 EUR
Mindestbestellmenge: 5000
BSC050N03LSGATMA1 Infineon-BSC050N03LS-DS-v02_01-en.pdf?fileId=db3a304412b407950112b4276b953c2b
BSC050N03LSGATMA1
Hersteller: Infineon Technologies
Description: MOSFET N-CH 30V 18A/80A TDSON
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 18A (Ta), 80A (Tc)
Rds On (Max) @ Id, Vgs: 5mOhm @ 30A, 10V
Power Dissipation (Max): 2.5W (Ta), 50W (Tc)
Vgs(th) (Max) @ Id: 2.2V @ 250µA
Supplier Device Package: PG-TDSON-8-5
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 35 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2800 pF @ 15 V
auf Bestellung 11920 Stücke:
Lieferzeit 21-28 Tag (e)
Anzahl Preis ohne MwSt
13+2.03 EUR
15+ 1.77 EUR
100+ 1.23 EUR
500+ 1.02 EUR
1000+ 0.87 EUR
2000+ 0.78 EUR
Mindestbestellmenge: 13
BSC050N03LSGXT Infineon-BSC050N03LS-DS-v02_01-en-770891.pdf
BSC050N03LSGXT
Hersteller: Infineon Technologies
MOSFET N-Ch 30V 79A TDSON-8 OptiMOS 3
auf Bestellung 5 Stücke:
Lieferzeit 14-28 Tag (e)
Anzahl Preis ohne MwSt
26+2.03 EUR
29+ 1.81 EUR
100+ 1.23 EUR
500+ 1.03 EUR
1000+ 0.88 EUR
2500+ 0.79 EUR
5000+ 0.74 EUR
Mindestbestellmenge: 26
BSC150N03LD G BSC150N03LD_rev1_4-1730932.pdf
BSC150N03LD G
Hersteller: Infineon Technologies
MOSFET N-Ch 30V 20A TDSON-8 OptiMOS 3
auf Bestellung 455 Stücke:
Lieferzeit 14-28 Tag (e)
Anzahl Preis ohne MwSt
22+2.42 EUR
27+ 2 EUR
100+ 1.55 EUR
500+ 1.32 EUR
1000+ 1.07 EUR
2500+ 1.01 EUR
5000+ 0.96 EUR
Mindestbestellmenge: 22
BSC150N03LDGATMA1 BSC150N03LD_rev1_4-1730932.pdf
BSC150N03LDGATMA1
Hersteller: Infineon Technologies
MOSFET N-Ch 30V 20A TDSON-8 OptiMOS 3
auf Bestellung 2725 Stücke:
Lieferzeit 14-28 Tag (e)
Anzahl Preis ohne MwSt
22+2.39 EUR
32+ 1.64 EUR
100+ 1.45 EUR
500+ 1.25 EUR
1000+ 1 EUR
5000+ 0.95 EUR
Mindestbestellmenge: 22
BSC150N03LDGATMA1 BSC150N03LD_rev1.4.pdf?folderId=db3a304313b8b5a60113cee8ed2a02db&fileId=db3a304316f66ee80116fb504a5d729f
BSC150N03LDGATMA1
Hersteller: Infineon Technologies
Description: MOSFET 2N-CH 30V 8A 8TDSON
Packaging: Cut Tape (CT)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 26W
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 8A
Input Capacitance (Ciss) (Max) @ Vds: 1100pF @ 15V
Rds On (Max) @ Id, Vgs: 15mOhm @ 20A, 10V
Gate Charge (Qg) (Max) @ Vgs: 13.2nC @ 10V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 2.2V @ 250µA
Supplier Device Package: PG-TDSON-8-4
Part Status: Active
auf Bestellung 50701 Stücke:
Lieferzeit 21-28 Tag (e)
Anzahl Preis ohne MwSt
11+2.42 EUR
14+ 1.99 EUR
100+ 1.55 EUR
500+ 1.31 EUR
1000+ 1.07 EUR
2000+ 1 EUR
Mindestbestellmenge: 11
BSC150N03LDGATMA1 BSC150N03LD_rev1.4.pdf?folderId=db3a304313b8b5a60113cee8ed2a02db&fileId=db3a304316f66ee80116fb504a5d729f
BSC150N03LDGATMA1
Hersteller: Infineon Technologies
Description: MOSFET 2N-CH 30V 8A 8TDSON
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 26W
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 8A
Input Capacitance (Ciss) (Max) @ Vds: 1100pF @ 15V
Rds On (Max) @ Id, Vgs: 15mOhm @ 20A, 10V
Gate Charge (Qg) (Max) @ Vgs: 13.2nC @ 10V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 2.2V @ 250µA
Supplier Device Package: PG-TDSON-8-4
Part Status: Active
auf Bestellung 50000 Stücke:
Lieferzeit 21-28 Tag (e)
Anzahl Preis ohne MwSt
5000+0.96 EUR
10000+ 0.91 EUR
Mindestbestellmenge: 5000
BSF050N03LQ3G INFNS16729-1.pdf?t.download=true&u=5oefqw
Hersteller: Infineon Technologies
Description: N-CHANNEL POWER MOSFET
Packaging: Bulk
Package / Case: DirectFET™ Isometric MX
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 15A (Ta), 60A (Tc)
Rds On (Max) @ Id, Vgs: 5mOhm @ 20A, 10V
Power Dissipation (Max): 2.2W (Ta), 28W (Tc)
Vgs(th) (Max) @ Id: 2.2V @ 250µA
Supplier Device Package: MG-WDSON-2
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 42 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3000 pF @ 15 V
auf Bestellung 14925 Stücke:
Lieferzeit 21-28 Tag (e)
Anzahl Preis ohne MwSt
770+0.94 EUR
Mindestbestellmenge: 770
BSO150N03MD G BSO150N03MD_rev1_1-1225816.pdf
BSO150N03MD G
Hersteller: Infineon Technologies
MOSFET N-Ch 30V 9.3A DSO-8 OptiMOS 3M
auf Bestellung 5859 Stücke:
Lieferzeit 14-28 Tag (e)
Anzahl Preis ohne MwSt
19+2.86 EUR
23+ 2.34 EUR
100+ 1.82 EUR
500+ 1.55 EUR
1000+ 1.26 EUR
2500+ 1.19 EUR
5000+ 1.13 EUR
Mindestbestellmenge: 19
BSO150N03MDGXUMA1 BSO150N03MD_rev1_1-1225816.pdf
BSO150N03MDGXUMA1
Hersteller: Infineon Technologies
MOSFET N-Ch 30V 9.3A DSO-8 OptiMOS 3M
auf Bestellung 9844 Stücke:
Lieferzeit 14-28 Tag (e)
Anzahl Preis ohne MwSt
25+2.15 EUR
29+ 1.82 EUR
100+ 1.48 EUR
500+ 1.32 EUR
1000+ 1.13 EUR
2500+ 1.12 EUR
Mindestbestellmenge: 25
BSO150N03MDGXUMA1 bso150n03md_rev1.0.pdf
BSO150N03MDGXUMA1
Hersteller: Infineon Technologies
Trans MOSFET N-CH 30V 8A 8-Pin DSO T/R
auf Bestellung 2500 Stücke:
Lieferzeit 14-21 Tag (e)
BSO150N03MDGXUMA1 BSO150N03MD_rev1.0.pdf?folderId=db3a304313d846880113d91d60c500c4&fileId=db3a30431b0626df011b0d8d11687e4c
BSO150N03MDGXUMA1
Hersteller: Infineon Technologies
Description: MOSFET 2N-CH 30V 8A 8DSO
Packaging: Cut Tape (CT)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 1.4W
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 8A
Input Capacitance (Ciss) (Max) @ Vds: 1300pF @ 15V
Rds On (Max) @ Id, Vgs: 15mOhm @ 9.3A, 10V
Gate Charge (Qg) (Max) @ Vgs: 17nC @ 10V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 2V @ 250µA
Supplier Device Package: PG-DSO-8
Part Status: Active
auf Bestellung 11595 Stücke:
Lieferzeit 21-28 Tag (e)
Anzahl Preis ohne MwSt
10+2.83 EUR
12+ 2.33 EUR
100+ 1.81 EUR
500+ 1.53 EUR
1000+ 1.25 EUR
Mindestbestellmenge: 10
BSO150N03MDGXUMA1 BSO150N03MD_rev1.0.pdf?folderId=db3a304313d846880113d91d60c500c4&fileId=db3a30431b0626df011b0d8d11687e4c
BSO150N03MDGXUMA1
Hersteller: Infineon Technologies
Description: MOSFET 2N-CH 30V 8A 8DSO
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 1.4W
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 8A
Input Capacitance (Ciss) (Max) @ Vds: 1300pF @ 15V
Rds On (Max) @ Id, Vgs: 15mOhm @ 9.3A, 10V
Gate Charge (Qg) (Max) @ Vgs: 17nC @ 10V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 2V @ 250µA
Supplier Device Package: PG-DSO-8
Part Status: Active
auf Bestellung 7500 Stücke:
Lieferzeit 21-28 Tag (e)
Anzahl Preis ohne MwSt
2500+1.18 EUR
5000+ 1.12 EUR
Mindestbestellmenge: 2500
BSO350N03 BSO350N03.pdf
BSO350N03
Hersteller: Infineon Technologies
Description: MOSFET 2N-CH 30V 5A 8DSO
Packaging: Bulk
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 1.4W
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 5A
Input Capacitance (Ciss) (Max) @ Vds: 480pF @ 15V
Rds On (Max) @ Id, Vgs: 35mOhm @ 6A, 10V
Gate Charge (Qg) (Max) @ Vgs: 3.7nC @ 5V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 2V @ 6µA
Supplier Device Package: PG-DSO-8
auf Bestellung 1832 Stücke:
Lieferzeit 21-28 Tag (e)
Anzahl Preis ohne MwSt
742+0.96 EUR
Mindestbestellmenge: 742
BSZ050N03LS G Infineon_BSZ050N03LS_G_DataSheet_v02_00_EN-3360770.pdf
BSZ050N03LS G
Hersteller: Infineon Technologies
MOSFET N-Ch 30V 40A TSDSON-8 OptiMOS 3
auf Bestellung 8687 Stücke:
Lieferzeit 14-28 Tag (e)
Anzahl Preis ohne MwSt
25+2.08 EUR
29+ 1.84 EUR
100+ 1.25 EUR
500+ 1.05 EUR
1000+ 0.89 EUR
2500+ 0.81 EUR
5000+ 0.75 EUR
Mindestbestellmenge: 25
BSZ050N03LSGATMA1 1510bsz050n03lsg_rev1.0.pdffolderiddb3a304313b8b5a60113cee8ed2a02dbfi.pdf
BSZ050N03LSGATMA1
Hersteller: Infineon Technologies
Trans MOSFET N-CH 30V 16A 8-Pin TSDSON EP T/R
auf Bestellung 5000 Stücke:
Lieferzeit 14-21 Tag (e)
BSZ050N03LSGATMA1 Infineon_BSZ050N03LS_G_DataSheet_v02_00_EN-3360770.pdf
BSZ050N03LSGATMA1
Hersteller: Infineon Technologies
MOSFET N-Ch 30V 40A TSDSON-8 OptiMOS 3
auf Bestellung 10000 Stücke:
Lieferzeit 14-28 Tag (e)
Anzahl Preis ohne MwSt
38+1.4 EUR
42+ 1.24 EUR
100+ 0.96 EUR
500+ 0.76 EUR
1000+ 0.72 EUR
Mindestbestellmenge: 38
BSZ050N03LSGATMA1 BSZ050N03LSG_rev1.1.pdf?folderId=db3a304313b8b5a60113cee8ed2a02db&fileId=db3a304313b8b5a60113d3f6944e03ee
BSZ050N03LSGATMA1
Hersteller: Infineon Technologies
Description: MOSFET N-CH 30V 16A/40A 8TSDSON
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 16A (Ta), 40A (Tc)
Rds On (Max) @ Id, Vgs: 5mOhm @ 20A, 10V
Power Dissipation (Max): 2.1W (Ta), 50W (Tc)
Vgs(th) (Max) @ Id: 2.2V @ 250µA
Supplier Device Package: PG-TSDSON-8
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 35 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2800 pF @ 15 V
auf Bestellung 477 Stücke:
Lieferzeit 21-28 Tag (e)
Anzahl Preis ohne MwSt
13+2.05 EUR
15+ 1.79 EUR
100+ 1.24 EUR
Mindestbestellmenge: 13
BSZ050N03MS G Infineon_BSZ050N03MS_G_DataSheet_v02_00_EN-3360715.pdf
BSZ050N03MS G
Hersteller: Infineon Technologies
MOSFET N-Ch 30V 40A TSDSON-8 OptiMOS 3M
auf Bestellung 9762 Stücke:
Lieferzeit 14-28 Tag (e)
Anzahl Preis ohne MwSt
25+2.08 EUR
29+ 1.81 EUR
100+ 1.25 EUR
500+ 1.05 EUR
1000+ 0.79 EUR
5000+ 0.72 EUR
Mindestbestellmenge: 25
BSZ050N03MSGATMA1 1509bsz050n03msg_rev1.1.pdffolderiddb3a304313d846880113d91d60c500c4fi.pdf
BSZ050N03MSGATMA1
Hersteller: Infineon Technologies
Trans MOSFET N-CH 30V 15A 8-Pin TSDSON EP T/R
auf Bestellung 5000 Stücke:
Lieferzeit 14-21 Tag (e)
BSZ050N03MSGATMA1 BSZ050N03MSG_rev1.4.pdf?folderId=db3a304313d846880113d91d60c500c4&fileId=db3a304313d846880113ddea0e8802e4
BSZ050N03MSGATMA1
Hersteller: Infineon Technologies
Description: MOSFET N-CH 30V 15A/40A 8TSDSON
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 15A (Ta), 40A (Tc)
Rds On (Max) @ Id, Vgs: 4.5mOhm @ 20A, 10V
Power Dissipation (Max): 2.1W (Ta), 48W (Tc)
Vgs(th) (Max) @ Id: 2V @ 250µA
Supplier Device Package: PG-TSDSON-8
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 46 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3600 pF @ 15 V
auf Bestellung 5000 Stücke:
Lieferzeit 21-28 Tag (e)
Anzahl Preis ohne MwSt
5000+0.75 EUR
Mindestbestellmenge: 5000
BSZ050N03MSGATMA1 BSZ050N03MSG_rev1.4.pdf?folderId=db3a304313d846880113d91d60c500c4&fileId=db3a304313d846880113ddea0e8802e4
BSZ050N03MSGATMA1
Hersteller: Infineon Technologies
Description: MOSFET N-CH 30V 15A/40A 8TSDSON
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 15A (Ta), 40A (Tc)
Rds On (Max) @ Id, Vgs: 4.5mOhm @ 20A, 10V
Power Dissipation (Max): 2.1W (Ta), 48W (Tc)
Vgs(th) (Max) @ Id: 2V @ 250µA
Supplier Device Package: PG-TSDSON-8
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 46 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3600 pF @ 15 V
auf Bestellung 9663 Stücke:
Lieferzeit 21-28 Tag (e)
Anzahl Preis ohne MwSt
13+2.05 EUR
15+ 1.79 EUR
100+ 1.24 EUR
500+ 1.04 EUR
1000+ 0.88 EUR
2000+ 0.79 EUR
Mindestbestellmenge: 13
DHD50N03
Hersteller: WXDH
Transistor N-Channel MOSFET; 30V; 20V; 7.5mOhm; 50A; 60W; -55°C ~ 175°C; Similar to: IRLR8729, IRLR8729TR, IRLR8729TRL DHD50N03 DONGHAI TDHD50n03
Anzahl je Verpackung: 75 Stücke
auf Bestellung 95 Stücke:
Lieferzeit 7-14 Tag (e)
Anzahl Preis ohne MwSt
150+0.36 EUR
Mindestbestellmenge: 150
DIT150N03 dit150n03.pdf
DIT150N03
Hersteller: DIOTEC SEMICONDUCTOR
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 105A; Idm: 600A; 130W; TO220AB
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 105A
Pulsed drain current: 600A
Power dissipation: 130W
Case: TO220AB
Gate-source voltage: ±20V
On-state resistance: 2.3mΩ
Mounting: THT
Gate charge: 38nC
Kind of package: tube
Kind of channel: enhanced
Heatsink thickness: max. 1.2mm
auf Bestellung 878 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis ohne MwSt
69+1.04 EUR
76+ 0.95 EUR
85+ 0.84 EUR
99+ 0.73 EUR
105+ 0.69 EUR
Mindestbestellmenge: 69
DIT150N03 dit150n03.pdf
DIT150N03
Hersteller: Diotec Semiconductor
MOSFET MOSFET, TO-220AB, 30V, 150A, 175C, N
auf Bestellung 980 Stücke:
Lieferzeit 14-28 Tag (e)
Anzahl Preis ohne MwSt
11+4.99 EUR
14+ 3.9 EUR
100+ 2.05 EUR
500+ 2.03 EUR
1000+ 1.7 EUR
2500+ 1.54 EUR
5000+ 1.44 EUR
Mindestbestellmenge: 11
G050N03S GOFORD-G050N03S.pdf
G050N03S
Hersteller: Goford Semiconductor
Description: MOSFET N-CH 30V 18A SOP-8
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 18A (Tc)
Rds On (Max) @ Id, Vgs: 5mOhm @ 10A, 10V
Power Dissipation (Max): 2.1W (Tc)
Vgs(th) (Max) @ Id: 2.4V @ 250µA
Supplier Device Package: 8-SOP
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
auf Bestellung 20000 Stücke:
Lieferzeit 21-28 Tag (e)
Anzahl Preis ohne MwSt
4000+0.5 EUR
16000+ 0.46 EUR
Mindestbestellmenge: 4000
G050N03S GOFORD-G050N03S.pdf
G050N03S
Hersteller: Goford Semiconductor
Description: N30V, 18A,RD<5M@10V,VTH1.1V~2.4V
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 18A (Tc)
Rds On (Max) @ Id, Vgs: 5mOhm @ 10A, 10V
Power Dissipation (Max): 2.1W (Tc)
Vgs(th) (Max) @ Id: 2.4V @ 250µA
Supplier Device Package: 8-SOP
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 37 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1714 pF @ 15 V
auf Bestellung 4000 Stücke:
Lieferzeit 21-28 Tag (e)
Anzahl Preis ohne MwSt
4000+0.62 EUR
Mindestbestellmenge: 4000
G250N03IE GOFORD-G250N03IE.pdf
G250N03IE
Hersteller: Goford Semiconductor
Description: MOSFET N-CH ESD 30V 5.3A SOT-23
Packaging: Tape & Reel (TR)
Package / Case: SOT-23-6
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 5.3A (Tc)
Rds On (Max) @ Id, Vgs: 25mOhm @ 4A, 10V
Power Dissipation (Max): 1.4W (Tc)
Vgs(th) (Max) @ Id: 1.3V @ 250µA
Supplier Device Package: SOT-23-6L
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 10V
Vgs (Max): ±10V
auf Bestellung 18000 Stücke:
Lieferzeit 21-28 Tag (e)
Anzahl Preis ohne MwSt
3000+0.094 EUR
15000+ 0.086 EUR
Mindestbestellmenge: 3000
G250N03IE GOFORD-G250N03IE.pdf
G250N03IE
Hersteller: Goford Semiconductor
Description: N30V,ESD 5.3A,RD<25M@10V,VTH0.5V
Packaging: Cut Tape (CT)
Package / Case: SOT-23-6
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 5.3A (Tc)
Rds On (Max) @ Id, Vgs: 25mOhm @ 4A, 10V
Power Dissipation (Max): 1.4W (Tc)
Vgs(th) (Max) @ Id: 1.3V @ 250µA
Supplier Device Package: SOT-23-6L
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 10V
Vgs (Max): ±10V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 9.1 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 573 pF @ 15 V
auf Bestellung 2830 Stücke:
Lieferzeit 21-28 Tag (e)
Anzahl Preis ohne MwSt
31+0.86 EUR
44+ 0.6 EUR
100+ 0.3 EUR
500+ 0.25 EUR
1000+ 0.18 EUR
Mindestbestellmenge: 31
G50N03D5 GOFORD-G50N03D5.pdf
G50N03D5
Hersteller: Goford Semiconductor
Description: N30V,RD(MAX)<4.5M@10V,RD(MAX)<8M
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 50A (Tc)
Rds On (Max) @ Id, Vgs: 4.5mOhm @ 20A, 10V
Power Dissipation (Max): 20W (Tc)
Vgs(th) (Max) @ Id: 2.4V @ 250µA
Supplier Device Package: 8-DFN (4.9x5.75)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 38.4 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1784 pF @ 15 V
auf Bestellung 4998 Stücke:
Lieferzeit 21-28 Tag (e)
Anzahl Preis ohne MwSt
18+1.46 EUR
21+ 1.26 EUR
100+ 0.87 EUR
500+ 0.73 EUR
1000+ 0.62 EUR
2000+ 0.55 EUR
Mindestbestellmenge: 18
G50N03D5 GOFORD-G50N03D5.pdf
G50N03D5
Hersteller: Goford Semiconductor
Description: MOSFET N-CH 30V 50A DFN5*6-8L
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 50A (Tc)
Rds On (Max) @ Id, Vgs: 4.5mOhm @ 20A, 10V
Power Dissipation (Max): 20W (Tc)
Vgs(th) (Max) @ Id: 2.4V @ 250µA
Supplier Device Package: 8-DFN (4.9x5.75)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
auf Bestellung 10000 Stücke:
Lieferzeit 21-28 Tag (e)
Anzahl Preis ohne MwSt
5000+0.39 EUR
Mindestbestellmenge: 5000
G50N03J GOFORD-G50N03J.pdf
G50N03J
Hersteller: Goford Semiconductor
Description: N30V,RD(MAX)<7M@10V,RD(MAX)<12M@
Packaging: Tube
Package / Case: TO-251-3 Stub Leads, IPak
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 65A (Tc)
Rds On (Max) @ Id, Vgs: 7mOhm @ 20A, 10V
Power Dissipation (Max): 48W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: TO-251
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 16.6 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1255 pF @ 15 V
auf Bestellung 3486 Stücke:
Lieferzeit 21-28 Tag (e)
Anzahl Preis ohne MwSt
19+1.43 EUR
21+ 1.25 EUR
100+ 0.86 EUR
500+ 0.72 EUR
1000+ 0.61 EUR
2000+ 0.55 EUR
Mindestbestellmenge: 19
G50N03J GOFORD-G50N03J.pdf
G50N03J
Hersteller: Goford Semiconductor
Description: MOSFET N-CH 30V 65A TO-251
Packaging: Tube
Package / Case: TO-251-3 Stub Leads, IPak
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 65A (Tc)
Rds On (Max) @ Id, Vgs: 7mOhm @ 20A, 10V
Power Dissipation (Max): 48W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: TO-251
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
auf Bestellung 3000 Stücke:
Lieferzeit 21-28 Tag (e)
Anzahl Preis ohne MwSt
3000+0.35 EUR
Mindestbestellmenge: 3000
G50N03K GOFORD-G50N03K.pdf
G50N03K
Hersteller: Goford Semiconductor
Description: N30V,RD(MAX)<7M@10V,RD(MAX)<12M@
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 65A (Tc)
Rds On (Max) @ Id, Vgs: 7mOhm @ 20A, 10V
Power Dissipation (Max): 48W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: TO-252 (DPAK)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 16.6 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 950 pF @ 15 V
auf Bestellung 1983 Stücke:
Lieferzeit 21-28 Tag (e)
Anzahl Preis ohne MwSt
18+1.48 EUR
21+ 1.27 EUR
100+ 0.88 EUR
500+ 0.69 EUR
1000+ 0.56 EUR
Mindestbestellmenge: 18
G50N03K GOFORD-G50N03K.pdf
G50N03K
Hersteller: Goford Semiconductor
Description: MOSFET N-CH 30V 65A TO-252
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 65A (Tc)
Rds On (Max) @ Id, Vgs: 7mOhm @ 20A, 10V
Power Dissipation (Max): 48W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: TO-252
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
auf Bestellung 80000 Stücke:
Lieferzeit 21-28 Tag (e)
Anzahl Preis ohne MwSt
2500+0.37 EUR
15000+ 0.35 EUR
30000+ 0.31 EUR
Mindestbestellmenge: 2500
G50N03K GOFORD-G50N03K.pdf
G50N03K
Hersteller: Goford Semiconductor
Description: N30V,RD(MAX)<7M@10V,RD(MAX)<12M@
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 65A (Tc)
Rds On (Max) @ Id, Vgs: 7mOhm @ 20A, 10V
Power Dissipation (Max): 48W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: TO-252 (DPAK)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 16.6 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 950 pF @ 15 V
auf Bestellung 2500 Stücke:
Lieferzeit 21-28 Tag (e)
Anzahl Preis ohne MwSt
2500+0.5 EUR
Mindestbestellmenge: 2500
IPD050N03L G Infineon_IPD050N03LG_DataSheet_v02_01_EN-3362524.pdf
IPD050N03L G
Hersteller: Infineon Technologies
MOSFET N-Ch 30V 50A DPAK-2 OptiMOS 3
auf Bestellung 2431 Stücke:
Lieferzeit 14-28 Tag (e)
Anzahl Preis ohne MwSt
19+2.76 EUR
23+ 2.26 EUR
100+ 1.76 EUR
500+ 1.5 EUR
1000+ 1.22 EUR
2500+ 1.14 EUR
5000+ 1.09 EUR
Mindestbestellmenge: 19
IPD050N03LGATMA1 IPD050N03LG-DTE.pdf
IPD050N03LGATMA1
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 50A; 68W; PG-TO252-3
Type of transistor: N-MOSFET
Technology: OptiMOS™ 3
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 50A
Power dissipation: 68W
Case: PG-TO252-3
Gate-source voltage: ±20V
On-state resistance: 5mΩ
Mounting: SMD
Kind of channel: enhanced
auf Bestellung 2500 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis ohne MwSt
67+1.07 EUR
88+ 0.82 EUR
100+ 0.72 EUR
115+ 0.62 EUR
122+ 0.59 EUR
500+ 0.58 EUR
Mindestbestellmenge: 67
IPD050N03LGATMA1 IPD050N03LG-DTE.pdf
IPD050N03LGATMA1
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 50A; 68W; PG-TO252-3
Type of transistor: N-MOSFET
Technology: OptiMOS™ 3
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 50A
Power dissipation: 68W
Case: PG-TO252-3
Gate-source voltage: ±20V
On-state resistance: 5mΩ
Mounting: SMD
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
auf Bestellung 2500 Stücke:
Lieferzeit 7-14 Tag (e)
Anzahl Preis ohne MwSt
67+1.07 EUR
88+ 0.82 EUR
100+ 0.72 EUR
115+ 0.62 EUR
122+ 0.59 EUR
500+ 0.58 EUR
Mindestbestellmenge: 67
IPD050N03LGATMA1 Infineon_IPD050N03LG_DataSheet_v02_01_EN-3362524.pdf
IPD050N03LGATMA1
Hersteller: Infineon Technologies
MOSFET N-Ch 30V 50A DPAK-2 OptiMOS 3
auf Bestellung 4376 Stücke:
Lieferzeit 14-28 Tag (e)
Anzahl Preis ohne MwSt
26+2.03 EUR
31+ 1.73 EUR
100+ 1.45 EUR
500+ 1.32 EUR
1000+ 1.13 EUR
2500+ 1.08 EUR
Mindestbestellmenge: 26
IPD050N03LGATMA1 3575ipd050n03lg_rev2.0._pdf.pdffolderiddb3a304313b8b5a60113cee8763b02.pdf
IPD050N03LGATMA1
Hersteller: Infineon Technologies
Trans MOSFET N-CH 30V 50A 3-Pin(2+Tab) DPAK T/R
auf Bestellung 15000 Stücke:
Lieferzeit 14-21 Tag (e)
IPD050N03LGATMA1 Infineon-IPD050N03LG-DS-v02_00-en.pdf?folderId=5546d4694909da4801490a07012f053b&fileId=db3a30432313ff5e01239e47dbfe701f
IPD050N03LGATMA1
Hersteller: Infineon Technologies
Description: MOSFET N-CH 30V 50A TO252-3
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 50A (Tc)
Rds On (Max) @ Id, Vgs: 5mOhm @ 30A, 10V
Power Dissipation (Max): 68W (Tc)
Vgs(th) (Max) @ Id: 2.2V @ 250µA
Supplier Device Package: PG-TO252-3-11
Part Status: Not For New Designs
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 31 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3200 pF @ 15 V
auf Bestellung 12500 Stücke:
Lieferzeit 21-28 Tag (e)
Anzahl Preis ohne MwSt
2500+1.14 EUR
5000+ 1.08 EUR
12500+ 1.03 EUR
Mindestbestellmenge: 2500
IPD050N03LGATMA1 Infineon-IPD050N03LG-DS-v02_00-en.pdf?folderId=5546d4694909da4801490a07012f053b&fileId=db3a30432313ff5e01239e47dbfe701f
IPD050N03LGATMA1
Hersteller: Infineon Technologies
Description: MOSFET N-CH 30V 50A TO252-3
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 50A (Tc)
Rds On (Max) @ Id, Vgs: 5mOhm @ 30A, 10V
Power Dissipation (Max): 68W (Tc)
Vgs(th) (Max) @ Id: 2.2V @ 250µA
Supplier Device Package: PG-TO252-3-11
Part Status: Not For New Designs
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 31 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3200 pF @ 15 V
auf Bestellung 13512 Stücke:
Lieferzeit 21-28 Tag (e)
Anzahl Preis ohne MwSt
10+2.73 EUR
12+ 2.25 EUR
100+ 1.75 EUR
500+ 1.48 EUR
1000+ 1.21 EUR
Mindestbestellmenge: 10
IPD50N03S2-07 Infineon_IPD50N03S2_07_DS_v01_00_en-3360291.pdf
IPD50N03S2-07
Hersteller: Infineon Technologies
MOSFET N-Ch 30V 50A DPAK-2 OptiMOS
auf Bestellung 7454 Stücke:
Lieferzeit 14-28 Tag (e)
Anzahl Preis ohne MwSt
14+3.93 EUR
16+ 3.25 EUR
100+ 2.59 EUR
250+ 2.39 EUR
500+ 2.17 EUR
1000+ 1.86 EUR
2500+ 1.77 EUR
Mindestbestellmenge: 14
IPD50N03S207ATMA1 IPD50N03S2-07_green.pdf?folderId=db3a304412b407950112b426f7da3b27&fileId=db3a304412b407950112b4270d5a3b72
IPD50N03S207ATMA1
Hersteller: Infineon Technologies
Description: MOSFET N-CH 30V 50A TO252-3
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 50A (Tc)
Rds On (Max) @ Id, Vgs: 7.3mOhm @ 50A, 10V
Power Dissipation (Max): 136W (Tc)
Vgs(th) (Max) @ Id: 4V @ 85µA
Supplier Device Package: PG-TO252-3-11
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 68 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2000 pF @ 25 V
auf Bestellung 2496 Stücke:
Lieferzeit 21-28 Tag (e)
Anzahl Preis ohne MwSt
7+3.9 EUR
10+ 3.24 EUR
100+ 2.58 EUR
500+ 2.18 EUR
1000+ 1.85 EUR
Mindestbestellmenge: 7
IPD50N03S2L-06 Infineon_IPD50N03S2L_06_DS_v01_00_en-1227022.pdf
IPD50N03S2L-06
Hersteller: Infineon Technologies
MOSFET N-Ch 30V 50A DPAK-2 OptiMOS
auf Bestellung 1975 Stücke:
Lieferzeit 14-28 Tag (e)
Anzahl Preis ohne MwSt
14+3.8 EUR
17+ 3.17 EUR
100+ 2.51 EUR
250+ 2.44 EUR
500+ 2.12 EUR
1000+ 1.8 EUR
2500+ 1.75 EUR
Mindestbestellmenge: 14
IPD50N03S2L06ATMA1 Infineon-IPD50N03S2L_06-DS-v01_00-en.pdf?folderId=db3a304412b407950112b426f7da3b27&fileId=db3a304412b407950112b4270cfc3b6e&ack=t
IPD50N03S2L06ATMA1
Hersteller: Infineon Technologies
Description: MOSFET N-CH 30V 50A TO252-31
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 50A (Tc)
Rds On (Max) @ Id, Vgs: 6.4mOhm @ 50A, 10V
Power Dissipation (Max): 136W (Tc)
Vgs(th) (Max) @ Id: 2V @ 85µA
Supplier Device Package: PG-TO252-3-11
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 68 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1900 pF @ 25 V
Grade: Automotive
Qualification: AEC-Q101
auf Bestellung 2321 Stücke:
Lieferzeit 21-28 Tag (e)
Anzahl Preis ohne MwSt
7+3.98 EUR
10+ 3.31 EUR
100+ 2.63 EUR
500+ 2.23 EUR
1000+ 1.89 EUR
Mindestbestellmenge: 7
IPD50N03S4L-06 Infineon_IPD50N03S4L_06_DS_v01_01_en-3360018.pdf
IPD50N03S4L-06
Hersteller: Infineon Technologies
MOSFET N-Ch 30V 50A DPAK-2 OptiMOS-T2
auf Bestellung 4941 Stücke:
Lieferzeit 14-28 Tag (e)
Anzahl Preis ohne MwSt
20+2.6 EUR
28+ 1.91 EUR
100+ 1.44 EUR
500+ 1.24 EUR
1000+ 1.16 EUR
2500+ 1.08 EUR
5000+ 1.03 EUR
Mindestbestellmenge: 20
IPD50N03S4L06ATMA1 ipd50n03s4l-06_ds_10.pdf
IPD50N03S4L06ATMA1
Hersteller: Infineon Technologies
Trans MOSFET N-CH 30V 50A Automotive 3-Pin(2+Tab) DPAK T/R
auf Bestellung 2500 Stücke:
Lieferzeit 14-21 Tag (e)
IPD50N03S4L06ATMA1 INFNS15258-1.pdf?t.download=true&u=5oefqw
IPD50N03S4L06ATMA1
Hersteller: Infineon Technologies
Description: MOSFET N-CH 30V 50A TO252-31
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 50A (Tc)
Rds On (Max) @ Id, Vgs: 5.5mOhm @ 50A, 10V
Power Dissipation (Max): 56W (Tc)
Vgs(th) (Max) @ Id: 2.2V @ 20µA
Supplier Device Package: PG-TO252-3-11
Grade: Automotive
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±16V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 31 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2330 pF @ 25 V
Qualification: AEC-Q101
auf Bestellung 7500 Stücke:
Lieferzeit 21-28 Tag (e)
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