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Foto | Bezeichnung | Hersteller | Beschreibung |
Verfügbarkeit |
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BA3430FS Produktcode: 77840 |
ROHM |
IC > IC Analog Gehäuse: SSOP-A24 Funktionsbeschreibung: Stereo pre-amplifiers with mute detection circuits for car stereos Spannung: 18V Temperaturbereich: -30...+85°C |
auf Bestellung 8 Stück: Lieferzeit 21-28 Tag (e) |
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BP0EA3430A7TR | KYOCERA AVX |
Description: RF FILT BAND PASS 3.43GHZ 30ULGA Packaging: Cut Tape (CT) Package / Case: 30-ULGA Filter Type: Band Pass Size / Dimension: 0.460" L x 0.170" W (11.68mm x 4.32mm) Mounting Type: Surface Mount Frequency: 3.43GHz Insertion Loss: 1dB Bandwidth: 1.82GHz Height (Max): 0.022" (0.56mm) |
auf Bestellung 197 Stücke: Lieferzeit 21-28 Tag (e) |
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CMFA3435103FNT | Cantherm |
Description: THERMISTOR NTC 10KOHM 3435K 0603 Packaging: Cut Tape (CT) Package / Case: 0603 (1608 Metric) Mounting Type: Surface Mount Operating Temperature: -40°C ~ 125°C B25/85: 3435K B Value Tolerance: ±1% Resistance in Ohms @ 25°C: 10k Resistance Tolerance: ±1% Part Status: Active Power - Max: 100 mW |
auf Bestellung 10244 Stücke: Lieferzeit 21-28 Tag (e) |
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CMFA3435103FNT | Cantherm |
Description: THERMISTOR NTC 10KOHM 3435K 0603 Packaging: Tape & Reel (TR) Package / Case: 0603 (1608 Metric) Mounting Type: Surface Mount Operating Temperature: -40°C ~ 125°C B25/85: 3435K B Value Tolerance: ±1% Resistance in Ohms @ 25°C: 10k Resistance Tolerance: ±1% Part Status: Active Power - Max: 100 mW |
auf Bestellung 4000 Stücke: Lieferzeit 21-28 Tag (e) |
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GA343DR7GD472KW01L | MURATA |
Category: MLCC SMD capacitors Description: Capacitor: ceramic; MLCC; 4.7nF; 250V; X7R; ±10%; SMD; 1812 Mounting: SMD Operating temperature: -55...125°C Operating voltage: 250V Capacitors series: GA3 Capacitance: 4.7nF Dielectric: X7R Type of capacitor: ceramic Tolerance: ±10% Kind of capacitor: MLCC Case - mm: 4532 Case - inch: 1812 |
auf Bestellung 4150 Stücke: Lieferzeit 14-21 Tag (e) |
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GA343DR7GD472KW01L | MURATA |
Category: MLCC SMD capacitors Description: Capacitor: ceramic; MLCC; 4.7nF; 250V; X7R; ±10%; SMD; 1812 Mounting: SMD Operating temperature: -55...125°C Operating voltage: 250V Capacitors series: GA3 Capacitance: 4.7nF Dielectric: X7R Type of capacitor: ceramic Tolerance: ±10% Kind of capacitor: MLCC Case - mm: 4532 Case - inch: 1812 Anzahl je Verpackung: 10 Stücke |
auf Bestellung 4150 Stücke: Lieferzeit 7-14 Tag (e) |
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GA343DR7GD472KW01L | Murata Electronics | Cap Ceramic 0.0047uF 250VAC X7R 10% Pad SMD 1812 125C T/R |
auf Bestellung 60000 Stücke: Lieferzeit 14-21 Tag (e) |
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GA343DR7GD472KW01L | Murata Electronics |
Description: CAP CER 4700PF 250VAC X7R 1812 Tolerance: ±10% Packaging: Tape & Reel (TR) Voltage - Rated: 250VAC Package / Case: 1812 (4532 Metric) Temperature Coefficient: X7R Size / Dimension: 0.177" L x 0.126" W (4.50mm x 3.20mm) Mounting Type: Surface Mount, MLCC Operating Temperature: -55°C ~ 125°C Applications: Safety Ratings: Y3 Thickness (Max): 0.079" (2.00mm) Capacitance: 4700 pF |
auf Bestellung 124000 Stücke: Lieferzeit 21-28 Tag (e) |
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GA343DR7GD472KW01L | Murata Electronics |
Description: CAP CER 4700PF 250VAC X7R 1812 Tolerance: ±10% Packaging: Cut Tape (CT) Voltage - Rated: 250VAC Package / Case: 1812 (4532 Metric) Temperature Coefficient: X7R Size / Dimension: 0.177" L x 0.126" W (4.50mm x 3.20mm) Mounting Type: Surface Mount, MLCC Operating Temperature: -55°C ~ 125°C Applications: Safety Ratings: Y3 Thickness (Max): 0.079" (2.00mm) Capacitance: 4700 pF |
auf Bestellung 126341 Stücke: Lieferzeit 21-28 Tag (e) |
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GA343QR7GD182KW01L | Murata Electronics |
Description: CAP CER 1800PF 250VAC X7R 1812 Tolerance: ±10% Packaging: Cut Tape (CT) Voltage - Rated: 250VAC Package / Case: 1812 (4532 Metric) Temperature Coefficient: X7R Size / Dimension: 0.177" L x 0.126" W (4.50mm x 3.20mm) Mounting Type: Surface Mount, MLCC Operating Temperature: -55°C ~ 125°C Applications: Safety Ratings: Y3 Thickness (Max): 0.059" (1.50mm) Capacitance: 1800 pF |
auf Bestellung 1900 Stücke: Lieferzeit 21-28 Tag (e) |
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GA343QR7GD182KW01L | Murata Electronics |
Description: CAP CER 1800PF 250VAC X7R 1812 Tolerance: ±10% Packaging: Tape & Reel (TR) Voltage - Rated: 250VAC Package / Case: 1812 (4532 Metric) Temperature Coefficient: X7R Size / Dimension: 0.177" L x 0.126" W (4.50mm x 3.20mm) Mounting Type: Surface Mount, MLCC Operating Temperature: -55°C ~ 125°C Applications: Safety Ratings: Y3 Thickness (Max): 0.059" (1.50mm) Capacitance: 1800 pF |
auf Bestellung 1000 Stücke: Lieferzeit 21-28 Tag (e) |
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GA343QR7GD222KW01L | Murata Electronics |
Description: CAP CER 2200PF 250VAC X7R 1812 Tolerance: ±10% Packaging: Cut Tape (CT) Voltage - Rated: 250VAC Package / Case: 1812 (4532 Metric) Temperature Coefficient: X7R Size / Dimension: 0.177" L x 0.126" W (4.50mm x 3.20mm) Mounting Type: Surface Mount, MLCC Operating Temperature: -55°C ~ 125°C Applications: Safety Ratings: Y3 Thickness (Max): 0.059" (1.50mm) Part Status: Active Capacitance: 2200 pF |
auf Bestellung 64561 Stücke: Lieferzeit 21-28 Tag (e) |
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GA343QR7GD222KW01L | Murata Electronics |
Description: CAP CER 2200PF 250VAC X7R 1812 Tolerance: ±10% Packaging: Tape & Reel (TR) Voltage - Rated: 250VAC Package / Case: 1812 (4532 Metric) Temperature Coefficient: X7R Size / Dimension: 0.177" L x 0.126" W (4.50mm x 3.20mm) Mounting Type: Surface Mount, MLCC Operating Temperature: -55°C ~ 125°C Applications: Safety Ratings: Y3 Thickness (Max): 0.059" (1.50mm) Part Status: Active Capacitance: 2200 pF |
auf Bestellung 62000 Stücke: Lieferzeit 21-28 Tag (e) |
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OPA343NA | Texas Instruments |
CMOS R-R I/O Op-Amp, GBW 5.5MHz, SR 6V/us, Voff 2mV, 2.5?5.5V, -40?85°C OPA343NA WO343OPA na Anzahl je Verpackung: 10 Stücke |
auf Bestellung 90 Stücke: Lieferzeit 7-14 Tag (e) |
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OPA343NA/250 | Texas Instruments |
Description: IC OPAMP GP 1 CIRCUIT SOT23-5 Packaging: Cut Tape (CT) Package / Case: SC-74A, SOT-753 Output Type: Rail-to-Rail Mounting Type: Surface Mount Amplifier Type: General Purpose Operating Temperature: -40°C ~ 85°C Current - Supply: 850µA Slew Rate: 6V/µs Gain Bandwidth Product: 5.5 MHz Current - Input Bias: 0.2 pA Voltage - Input Offset: 2 mV Supplier Device Package: SOT-23-5 Part Status: Active Number of Circuits: 1 Current - Output / Channel: 50 mA Voltage - Supply Span (Min): 2.5 V Voltage - Supply Span (Max): 5.5 V |
auf Bestellung 870 Stücke: Lieferzeit 21-28 Tag (e) |
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OPA343NA/250 | Texas Instruments |
Description: IC OPAMP GP 1 CIRCUIT SOT23-5 Packaging: Tape & Reel (TR) Package / Case: SC-74A, SOT-753 Output Type: Rail-to-Rail Mounting Type: Surface Mount Amplifier Type: General Purpose Operating Temperature: -40°C ~ 85°C Current - Supply: 850µA Slew Rate: 6V/µs Gain Bandwidth Product: 5.5 MHz Current - Input Bias: 0.2 pA Voltage - Input Offset: 2 mV Supplier Device Package: SOT-23-5 Part Status: Active Number of Circuits: 1 Current - Output / Channel: 50 mA Voltage - Supply Span (Min): 2.5 V Voltage - Supply Span (Max): 5.5 V |
auf Bestellung 750 Stücke: Lieferzeit 21-28 Tag (e) |
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OPA343NA/3K | Texas Instruments |
Description: IC OPAMP GP 1 CIRCUIT SOT23-5 Packaging: Cut Tape (CT) Package / Case: SC-74A, SOT-753 Output Type: Rail-to-Rail Mounting Type: Surface Mount Amplifier Type: General Purpose Operating Temperature: -40°C ~ 85°C Current - Supply: 850µA Slew Rate: 6V/µs Gain Bandwidth Product: 5.5 MHz Current - Input Bias: 0.2 pA Voltage - Input Offset: 2 mV Supplier Device Package: SOT-23-5 Part Status: Active Number of Circuits: 1 Current - Output / Channel: 50 mA Voltage - Supply Span (Min): 2.5 V Voltage - Supply Span (Max): 5.5 V |
auf Bestellung 5915 Stücke: Lieferzeit 21-28 Tag (e) |
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OPA343NA/3K | Texas Instruments |
Description: IC OPAMP GP 1 CIRCUIT SOT23-5 Packaging: Tape & Reel (TR) Package / Case: SC-74A, SOT-753 Output Type: Rail-to-Rail Mounting Type: Surface Mount Amplifier Type: General Purpose Operating Temperature: -40°C ~ 85°C Current - Supply: 850µA Slew Rate: 6V/µs Gain Bandwidth Product: 5.5 MHz Current - Input Bias: 0.2 pA Voltage - Input Offset: 2 mV Supplier Device Package: SOT-23-5 Part Status: Active Number of Circuits: 1 Current - Output / Channel: 50 mA Voltage - Supply Span (Min): 2.5 V Voltage - Supply Span (Max): 5.5 V |
auf Bestellung 3000 Stücke: Lieferzeit 21-28 Tag (e) |
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OPA343UA | TEXAS INSTRUMENTS |
Category: SMD operational amplifiers Description: IC: operational amplifier; 5.5MHz; Ch: 1; SO8 Mounting: SMT Operating temperature: -40...85°C Case: SO8 Slew rate: 6V/μs Voltage supply range: ± 1.25...2.75V DC; 2.5...5.5V DC Type of integrated circuit: operational amplifier Number of channels: 1 Bandwidth: 5.5MHz |
auf Bestellung 94 Stücke: Lieferzeit 14-21 Tag (e) |
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OPA343UA | TEXAS INSTRUMENTS |
Category: SMD operational amplifiers Description: IC: operational amplifier; 5.5MHz; Ch: 1; SO8 Mounting: SMT Operating temperature: -40...85°C Case: SO8 Slew rate: 6V/μs Voltage supply range: ± 1.25...2.75V DC; 2.5...5.5V DC Type of integrated circuit: operational amplifier Number of channels: 1 Bandwidth: 5.5MHz Anzahl je Verpackung: 1 Stücke |
auf Bestellung 94 Stücke: Lieferzeit 7-14 Tag (e) |
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OPA343UA | Texas Instruments |
Description: IC OPAMP GP 1 CIRCUIT 8SOIC Packaging: Tube Package / Case: 8-SOIC (0.154", 3.90mm Width) Output Type: Rail-to-Rail Mounting Type: Surface Mount Amplifier Type: General Purpose Operating Temperature: -40°C ~ 85°C Current - Supply: 850µA Slew Rate: 6V/µs Gain Bandwidth Product: 5.5 MHz Current - Input Bias: 0.2 pA Voltage - Input Offset: 2 mV Supplier Device Package: 8-SOIC Part Status: Active Number of Circuits: 1 Current - Output / Channel: 50 mA Voltage - Supply Span (Min): 2.5 V Voltage - Supply Span (Max): 5.5 V |
auf Bestellung 470 Stücke: Lieferzeit 21-28 Tag (e) |
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OPA343UA/2K5 | Texas Instruments |
Description: IC OPAMP GP 1 CIRCUIT 8SOIC Packaging: Cut Tape (CT) Package / Case: 8-SOIC (0.154", 3.90mm Width) Output Type: Rail-to-Rail Mounting Type: Surface Mount Amplifier Type: General Purpose Operating Temperature: -40°C ~ 85°C Current - Supply: 850µA Slew Rate: 6V/µs Gain Bandwidth Product: 5.5 MHz Current - Input Bias: 0.2 pA Voltage - Input Offset: 2 mV Supplier Device Package: 8-SOIC Part Status: Active Number of Circuits: 1 Current - Output / Channel: 50 mA Voltage - Supply Span (Min): 2.5 V Voltage - Supply Span (Max): 5.5 V |
auf Bestellung 1559 Stücke: Lieferzeit 21-28 Tag (e) |
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OPA343UA/2K5 | Texas Instruments |
Description: IC OPAMP GP 1 CIRCUIT 8SOIC Packaging: Bulk Package / Case: 8-SOIC (0.154", 3.90mm Width) Output Type: Rail-to-Rail Mounting Type: Surface Mount Amplifier Type: General Purpose Operating Temperature: -40°C ~ 85°C Current - Supply: 850µA Slew Rate: 6V/µs Gain Bandwidth Product: 5.5 MHz Current - Input Bias: 0.2 pA Voltage - Input Offset: 2 mV Supplier Device Package: 8-SOIC Part Status: Active Number of Circuits: 1 Current - Output / Channel: 50 mA Voltage - Supply Span (Min): 2.5 V Voltage - Supply Span (Max): 5.5 V |
auf Bestellung 26524 Stücke: Lieferzeit 21-28 Tag (e) |
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PJA3430_R1_00001 | PanJit Semiconductor |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 20V; 2A; Idm: 8A; 1.25W; SOT23 Mounting: SMD Drain current: 2A Power dissipation: 1.25W Polarisation: unipolar Drain-source voltage: 20V Kind of package: reel; tape Case: SOT23 Gate charge: 1.8nC Kind of channel: enhanced Gate-source voltage: ±8V Pulsed drain current: 8A On-state resistance: 0.4Ω Type of transistor: N-MOSFET |
auf Bestellung 2590 Stücke: Lieferzeit 14-21 Tag (e) |
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PJA3430_R1_00001 | PanJit Semiconductor |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 20V; 2A; Idm: 8A; 1.25W; SOT23 Mounting: SMD Drain current: 2A Power dissipation: 1.25W Polarisation: unipolar Drain-source voltage: 20V Kind of package: reel; tape Case: SOT23 Gate charge: 1.8nC Kind of channel: enhanced Gate-source voltage: ±8V Pulsed drain current: 8A On-state resistance: 0.4Ω Type of transistor: N-MOSFET Anzahl je Verpackung: 5 Stücke |
auf Bestellung 2590 Stücke: Lieferzeit 7-14 Tag (e) |
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PJA3430_R1_00001 | Panjit International Inc. |
Description: SOT-23, MOSFET Packaging: Tape & Reel (TR) Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 2A (Ta) Rds On (Max) @ Id, Vgs: 150mOhm @ 2A, 4.5V Power Dissipation (Max): 1.25W (Ta) Vgs(th) (Max) @ Id: 1V @ 250µA Supplier Device Package: SOT-23 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V Vgs (Max): ±8V Drain to Source Voltage (Vdss): 20 V Gate Charge (Qg) (Max) @ Vgs: 1.8 nC @ 4.5 V Input Capacitance (Ciss) (Max) @ Vds: 92 pF @ 10 V |
auf Bestellung 27000 Stücke: Lieferzeit 21-28 Tag (e) |
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PJA3430_R1_00001 | Panjit International Inc. |
Description: SOT-23, MOSFET Packaging: Cut Tape (CT) Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 2A (Ta) Rds On (Max) @ Id, Vgs: 150mOhm @ 2A, 4.5V Power Dissipation (Max): 1.25W (Ta) Vgs(th) (Max) @ Id: 1V @ 250µA Supplier Device Package: SOT-23 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V Vgs (Max): ±8V Drain to Source Voltage (Vdss): 20 V Gate Charge (Qg) (Max) @ Vgs: 1.8 nC @ 4.5 V Input Capacitance (Ciss) (Max) @ Vds: 92 pF @ 10 V |
auf Bestellung 29205 Stücke: Lieferzeit 21-28 Tag (e) |
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PJA3431_R1_00001 | Panjit International Inc. |
Description: 30V P-CHANNEL ENHANCEMENT MODE M Packaging: Tape & Reel (TR) Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 1.5A (Ta) Rds On (Max) @ Id, Vgs: 325mOhm @ 1.5A, 4.5V Power Dissipation (Max): 1.25W (Ta) Vgs(th) (Max) @ Id: 1V @ 250µA Supplier Device Package: SOT-23 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V Vgs (Max): ±8V Drain to Source Voltage (Vdss): 20 V Gate Charge (Qg) (Max) @ Vgs: 1.7 nC @ 4.5 V Input Capacitance (Ciss) (Max) @ Vds: 165 pF @ 10 V |
auf Bestellung 3000 Stücke: Lieferzeit 21-28 Tag (e) |
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PJA3431_R1_00001 | Panjit International Inc. |
Description: 30V P-CHANNEL ENHANCEMENT MODE M Packaging: Cut Tape (CT) Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 1.5A (Ta) Rds On (Max) @ Id, Vgs: 325mOhm @ 1.5A, 4.5V Power Dissipation (Max): 1.25W (Ta) Vgs(th) (Max) @ Id: 1V @ 250µA Supplier Device Package: SOT-23 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V Vgs (Max): ±8V Drain to Source Voltage (Vdss): 20 V Gate Charge (Qg) (Max) @ Vgs: 1.7 nC @ 4.5 V Input Capacitance (Ciss) (Max) @ Vds: 165 pF @ 10 V |
auf Bestellung 3873 Stücke: Lieferzeit 21-28 Tag (e) |
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PJA3432-AU_R1_000A1 | PanJit Semiconductor |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 30V; 1.6A; Idm: 6.4A; 1.25W; SOT23 Mounting: SMD Application: automotive industry Drain current: 1.6A Power dissipation: 1.25W Polarisation: unipolar Drain-source voltage: 30V Kind of package: reel; tape Case: SOT23 Gate charge: 1.5nC Kind of channel: enhanced Gate-source voltage: ±8V Pulsed drain current: 6.4A On-state resistance: 570mΩ Type of transistor: N-MOSFET |
auf Bestellung 2725 Stücke: Lieferzeit 14-21 Tag (e) |
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PJA3432-AU_R1_000A1 | PanJit Semiconductor |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 30V; 1.6A; Idm: 6.4A; 1.25W; SOT23 Mounting: SMD Application: automotive industry Drain current: 1.6A Power dissipation: 1.25W Polarisation: unipolar Drain-source voltage: 30V Kind of package: reel; tape Case: SOT23 Gate charge: 1.5nC Kind of channel: enhanced Gate-source voltage: ±8V Pulsed drain current: 6.4A On-state resistance: 570mΩ Type of transistor: N-MOSFET Anzahl je Verpackung: 5 Stücke |
auf Bestellung 2725 Stücke: Lieferzeit 7-14 Tag (e) |
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PJA3432-AU_R1_000A1 | Panjit International Inc. |
Description: SOT-23, MOSFET Packaging: Tape & Reel (TR) Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 1.6A (Ta) Rds On (Max) @ Id, Vgs: 200mOhm @ 1.6A, 4.5V Power Dissipation (Max): 1.25W (Ta) Vgs(th) (Max) @ Id: 1.3V @ 250µA Supplier Device Package: SOT-23 Grade: Automotive Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V Vgs (Max): ±8V Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 1.5 nC @ 4.5 V Input Capacitance (Ciss) (Max) @ Vds: 93 pF @ 15 V Qualification: AEC-Q101 |
auf Bestellung 75000 Stücke: Lieferzeit 21-28 Tag (e) |
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PJA3432-AU_R1_000A1 | Panjit International Inc. |
Description: SOT-23, MOSFET Packaging: Cut Tape (CT) Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 1.6A (Ta) Rds On (Max) @ Id, Vgs: 200mOhm @ 1.6A, 4.5V Power Dissipation (Max): 1.25W (Ta) Vgs(th) (Max) @ Id: 1.3V @ 250µA Supplier Device Package: SOT-23 Grade: Automotive Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V Vgs (Max): ±8V Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 1.5 nC @ 4.5 V Input Capacitance (Ciss) (Max) @ Vds: 93 pF @ 15 V Qualification: AEC-Q101 |
auf Bestellung 75722 Stücke: Lieferzeit 21-28 Tag (e) |
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PJA3432_R1_00001 | Panjit International Inc. |
Description: SOT-23, MOSFET Packaging: Tape & Reel (TR) Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 1.6A (Ta) Rds On (Max) @ Id, Vgs: 200mOhm @ 1.6A, 4,5V Power Dissipation (Max): 1.25W (Ta) Vgs(th) (Max) @ Id: 1.3V @ 250µA Supplier Device Package: SOT-23 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V Vgs (Max): ±8V Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 1.5 nC @ 4.5 V Input Capacitance (Ciss) (Max) @ Vds: 93 pF @ 15 V |
auf Bestellung 18000 Stücke: Lieferzeit 21-28 Tag (e) |
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PJA3432_R1_00001 | Panjit International Inc. |
Description: SOT-23, MOSFET Packaging: Cut Tape (CT) Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 1.6A (Ta) Rds On (Max) @ Id, Vgs: 200mOhm @ 1.6A, 4,5V Power Dissipation (Max): 1.25W (Ta) Vgs(th) (Max) @ Id: 1.3V @ 250µA Supplier Device Package: SOT-23 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V Vgs (Max): ±8V Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 1.5 nC @ 4.5 V Input Capacitance (Ciss) (Max) @ Vds: 93 pF @ 15 V |
auf Bestellung 27013 Stücke: Lieferzeit 21-28 Tag (e) |
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PJA3433-AU_R1_000A1 | PanJit Semiconductor |
Category: SMD P channel transistors Description: Transistor: P-MOSFET; unipolar; -30V; -1.1A; Idm: -4.4A; 1.25W Mounting: SMD Application: automotive industry Drain current: -1.1A Power dissipation: 1.25W Polarisation: unipolar Drain-source voltage: -30V Kind of package: reel; tape Case: SOT23 Gate charge: 1.6nC Kind of channel: enhanced Gate-source voltage: ±8V Pulsed drain current: -4.4A On-state resistance: 0.97Ω Type of transistor: P-MOSFET |
auf Bestellung 3000 Stücke: Lieferzeit 14-21 Tag (e) |
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PJA3433-AU_R1_000A1 | PanJit Semiconductor |
Category: SMD P channel transistors Description: Transistor: P-MOSFET; unipolar; -30V; -1.1A; Idm: -4.4A; 1.25W Mounting: SMD Application: automotive industry Drain current: -1.1A Power dissipation: 1.25W Polarisation: unipolar Drain-source voltage: -30V Kind of package: reel; tape Case: SOT23 Gate charge: 1.6nC Kind of channel: enhanced Gate-source voltage: ±8V Pulsed drain current: -4.4A On-state resistance: 0.97Ω Type of transistor: P-MOSFET Anzahl je Verpackung: 5 Stücke |
auf Bestellung 3000 Stücke: Lieferzeit 7-14 Tag (e) |
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PJA3433-AU_R1_000A1 | Panjit International Inc. |
Description: SOT-23, MOSFET Packaging: Tape & Reel (TR) Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 1.1A (Ta) Rds On (Max) @ Id, Vgs: 370mOhm @ 1.1A, 4.5V Power Dissipation (Max): 1.25W (Ta) Vgs(th) (Max) @ Id: 1.3V @ 250µA Supplier Device Package: SOT-23 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V Vgs (Max): ±8V Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 1.6 nC @ 4.5 V Input Capacitance (Ciss) (Max) @ Vds: 125 pF @ 15 V Grade: Automotive Qualification: AEC-Q101 |
auf Bestellung 33000 Stücke: Lieferzeit 21-28 Tag (e) |
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PJA3433-AU_R1_000A1 | Panjit International Inc. |
Description: SOT-23, MOSFET Packaging: Cut Tape (CT) Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 1.1A (Ta) Rds On (Max) @ Id, Vgs: 370mOhm @ 1.1A, 4.5V Power Dissipation (Max): 1.25W (Ta) Vgs(th) (Max) @ Id: 1.3V @ 250µA Supplier Device Package: SOT-23 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V Vgs (Max): ±8V Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 1.6 nC @ 4.5 V Input Capacitance (Ciss) (Max) @ Vds: 125 pF @ 15 V Grade: Automotive Qualification: AEC-Q101 |
auf Bestellung 38503 Stücke: Lieferzeit 21-28 Tag (e) |
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PJA3433_R1_00001 | PanJit Semiconductor |
Category: SMD P channel transistors Description: Transistor: P-MOSFET; unipolar; -30V; -1.1A; Idm: -4.4A; 1.25W Mounting: SMD Drain current: -1.1A Power dissipation: 1.25W Polarisation: unipolar Drain-source voltage: -30V Kind of package: reel; tape Case: SOT23 Gate charge: 1.6nC Kind of channel: enhanced Gate-source voltage: ±8V Pulsed drain current: -4.4A On-state resistance: 0.97Ω Type of transistor: P-MOSFET |
auf Bestellung 5985 Stücke: Lieferzeit 14-21 Tag (e) |
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PJA3433_R1_00001 | Panjit International Inc. |
Description: SOT-23, MOSFET Packaging: Cut Tape (CT) Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 1.1A (Ta) Rds On (Max) @ Id, Vgs: 370mOhm @ 1.1A, 4.5V Power Dissipation (Max): 1.25W (Ta) Vgs(th) (Max) @ Id: 1.3V @ 250µA Supplier Device Package: SOT-23 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V Vgs (Max): ±8V Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 1.6 nC @ 4.5 V Input Capacitance (Ciss) (Max) @ Vds: 125 pF @ 15 V |
auf Bestellung 21929 Stücke: Lieferzeit 21-28 Tag (e) |
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PJA3433_R1_00001 | Panjit International Inc. |
Description: SOT-23, MOSFET Packaging: Tape & Reel (TR) Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 1.1A (Ta) Rds On (Max) @ Id, Vgs: 370mOhm @ 1.1A, 4.5V Power Dissipation (Max): 1.25W (Ta) Vgs(th) (Max) @ Id: 1.3V @ 250µA Supplier Device Package: SOT-23 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V Vgs (Max): ±8V Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 1.6 nC @ 4.5 V Input Capacitance (Ciss) (Max) @ Vds: 125 pF @ 15 V |
auf Bestellung 15000 Stücke: Lieferzeit 21-28 Tag (e) |
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PJA3434_R1_00001 | PanJit Semiconductor |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 20V; 750mA; Idm: 1.5A; 500mW; SOT23 Mounting: SMD Drain current: 0.75A Power dissipation: 0.5W Polarisation: unipolar Drain-source voltage: 20V Kind of package: reel; tape Case: SOT23 Gate charge: 1.4nC Kind of channel: enhanced Gate-source voltage: ±10V Pulsed drain current: 1.5A On-state resistance: 3Ω Type of transistor: N-MOSFET |
auf Bestellung 2670 Stücke: Lieferzeit 14-21 Tag (e) |
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PJA3434_R1_00001 | PanJit Semiconductor |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 20V; 750mA; Idm: 1.5A; 500mW; SOT23 Mounting: SMD Drain current: 0.75A Power dissipation: 0.5W Polarisation: unipolar Drain-source voltage: 20V Kind of package: reel; tape Case: SOT23 Gate charge: 1.4nC Kind of channel: enhanced Gate-source voltage: ±10V Pulsed drain current: 1.5A On-state resistance: 3Ω Type of transistor: N-MOSFET Anzahl je Verpackung: 5 Stücke |
auf Bestellung 2670 Stücke: Lieferzeit 7-14 Tag (e) |
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PJA3434_R1_00001 | Panjit International Inc. |
Description: SOT-23, MOSFET Packaging: Cut Tape (CT) Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 750mA (Ta) Rds On (Max) @ Id, Vgs: 400mOhm @ 600mA, 4.5V Power Dissipation (Max): 500mW (Ta) Vgs(th) (Max) @ Id: 1V @ 250µA Supplier Device Package: SOT-23 Drive Voltage (Max Rds On, Min Rds On): 1.2V, 4.5V Vgs (Max): ±10V Drain to Source Voltage (Vdss): 20 V Gate Charge (Qg) (Max) @ Vgs: 1.4 nC @ 4.5 V Input Capacitance (Ciss) (Max) @ Vds: 67 pF @ 10 V |
auf Bestellung 3956 Stücke: Lieferzeit 21-28 Tag (e) |
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PJA3435_R1_00001 | PanJit Semiconductor |
Category: SMD P channel transistors Description: Transistor: P-MOSFET; unipolar; -20V; -500mA; Idm: -1A; 500mW; SOT23 Mounting: SMD Drain current: -500mA Power dissipation: 0.5W Polarisation: unipolar Drain-source voltage: -20V Kind of package: reel; tape Case: SOT23 Gate charge: 1.4nC Kind of channel: enhanced Gate-source voltage: ±10V Pulsed drain current: -1A On-state resistance: 6Ω Type of transistor: P-MOSFET |
auf Bestellung 2980 Stücke: Lieferzeit 14-21 Tag (e) |
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PJA3435_R1_00001 | PanJit Semiconductor |
Category: SMD P channel transistors Description: Transistor: P-MOSFET; unipolar; -20V; -500mA; Idm: -1A; 500mW; SOT23 Mounting: SMD Drain current: -500mA Power dissipation: 0.5W Polarisation: unipolar Drain-source voltage: -20V Kind of package: reel; tape Case: SOT23 Gate charge: 1.4nC Kind of channel: enhanced Gate-source voltage: ±10V Pulsed drain current: -1A On-state resistance: 6Ω Type of transistor: P-MOSFET Anzahl je Verpackung: 5 Stücke |
auf Bestellung 2980 Stücke: Lieferzeit 7-14 Tag (e) |
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PJA3435_R1_00001 | Panjit International Inc. |
Description: 30V P-CHANNEL ENHANCEMENT MODE M Packaging: Cut Tape (CT) Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 500mA (Ta) Rds On (Max) @ Id, Vgs: 1.2Ohm @ 500mA, 4.5V Power Dissipation (Max): 500mW (Ta) Vgs(th) (Max) @ Id: 1V @ 250µA Supplier Device Package: SOT-23 Drive Voltage (Max Rds On, Min Rds On): 1.2V, 4.5V Vgs (Max): ±10V Drain to Source Voltage (Vdss): 20 V Gate Charge (Qg) (Max) @ Vgs: 1.4 nC @ 4.5 V Input Capacitance (Ciss) (Max) @ Vds: 38 pF @ 10 V |
auf Bestellung 2313 Stücke: Lieferzeit 21-28 Tag (e) |
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PJA3436-AU_R1_000A1 | PanJit Semiconductor |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 20V; 1.2A; Idm: 4.8A; 1.25W; SOT23 Mounting: SMD Application: automotive industry Drain current: 1.2A Power dissipation: 1.25W Polarisation: unipolar Drain-source voltage: 20V Kind of package: reel; tape Case: SOT23 Gate charge: 0.9nC Kind of channel: enhanced Gate-source voltage: ±12V Pulsed drain current: 4.8A On-state resistance: 0.9Ω Type of transistor: N-MOSFET |
auf Bestellung 3000 Stücke: Lieferzeit 14-21 Tag (e) |
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PJA3436-AU_R1_000A1 | PanJit Semiconductor |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 20V; 1.2A; Idm: 4.8A; 1.25W; SOT23 Mounting: SMD Application: automotive industry Drain current: 1.2A Power dissipation: 1.25W Polarisation: unipolar Drain-source voltage: 20V Kind of package: reel; tape Case: SOT23 Gate charge: 0.9nC Kind of channel: enhanced Gate-source voltage: ±12V Pulsed drain current: 4.8A On-state resistance: 0.9Ω Type of transistor: N-MOSFET Anzahl je Verpackung: 5 Stücke |
auf Bestellung 3000 Stücke: Lieferzeit 7-14 Tag (e) |
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PJA3436-AU_R1_000A1 | Panjit International Inc. |
Description: SOT-23, MOSFET Packaging: Cut Tape (CT) Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 1.2A (Ta) Rds On (Max) @ Id, Vgs: 380mOhm @ 1.2A, 4.5V Power Dissipation (Max): 1.25W (Ta) Vgs(th) (Max) @ Id: 1V @ 250µA Supplier Device Package: SOT-23 Grade: Automotive Part Status: Not For New Designs Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V Vgs (Max): ±12V Drain to Source Voltage (Vdss): 20 V Gate Charge (Qg) (Max) @ Vgs: 0.9 nC @ 4.5 V Input Capacitance (Ciss) (Max) @ Vds: 39 pF @ 10 V Qualification: AEC-Q101 |
auf Bestellung 4449 Stücke: Lieferzeit 21-28 Tag (e) |
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PJA3436_R1_00001 | Panjit International Inc. |
Description: SOT-23, MOSFET Packaging: Cut Tape (CT) Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 1.2A (Ta) Rds On (Max) @ Id, Vgs: 380mOhm @ 1.2A, 4.5V Power Dissipation (Max): 1.25W (Ta) Vgs(th) (Max) @ Id: 1V @ 250µA Supplier Device Package: SOT-23 Part Status: Not For New Designs Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V Vgs (Max): ±12V Drain to Source Voltage (Vdss): 20 V Gate Charge (Qg) (Max) @ Vgs: 0.9 nC @ 4.5 V Input Capacitance (Ciss) (Max) @ Vds: 39 pF @ 10 V |
auf Bestellung 28911 Stücke: Lieferzeit 21-28 Tag (e) |
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PJA3436_R1_00001 | Panjit International Inc. |
Description: SOT-23, MOSFET Packaging: Tape & Reel (TR) Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 1.2A (Ta) Rds On (Max) @ Id, Vgs: 380mOhm @ 1.2A, 4.5V Power Dissipation (Max): 1.25W (Ta) Vgs(th) (Max) @ Id: 1V @ 250µA Supplier Device Package: SOT-23 Part Status: Not For New Designs Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V Vgs (Max): ±12V Drain to Source Voltage (Vdss): 20 V Gate Charge (Qg) (Max) @ Vgs: 0.9 nC @ 4.5 V Input Capacitance (Ciss) (Max) @ Vds: 39 pF @ 10 V |
auf Bestellung 27000 Stücke: Lieferzeit 21-28 Tag (e) |
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PJA3438-AU_R1_000A1 | PanJit Semiconductor |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 50V; 500mA; Idm: 1.2A; 500mW; SOT23 Mounting: SMD Application: automotive industry Drain current: 0.5A Power dissipation: 0.5W Polarisation: unipolar Drain-source voltage: 50V Kind of package: reel; tape Case: SOT23 Gate charge: 0.95nC Kind of channel: enhanced Gate-source voltage: ±20V Pulsed drain current: 1.2A On-state resistance: 6Ω Type of transistor: N-MOSFET |
auf Bestellung 3000 Stücke: Lieferzeit 14-21 Tag (e) |
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PJA3438-AU_R1_000A1 | PanJit Semiconductor |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 50V; 500mA; Idm: 1.2A; 500mW; SOT23 Mounting: SMD Application: automotive industry Drain current: 0.5A Power dissipation: 0.5W Polarisation: unipolar Drain-source voltage: 50V Kind of package: reel; tape Case: SOT23 Gate charge: 0.95nC Kind of channel: enhanced Gate-source voltage: ±20V Pulsed drain current: 1.2A On-state resistance: 6Ω Type of transistor: N-MOSFET Anzahl je Verpackung: 5 Stücke |
auf Bestellung 3000 Stücke: Lieferzeit 7-14 Tag (e) |
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PJA3438-AU_R1_000A1 | Panjit International Inc. |
Description: SOT-23, MOSFET Packaging: Tape & Reel (TR) Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 500mA (Ta) Rds On (Max) @ Id, Vgs: 1.45Ohm @ 500mA, 10V Power Dissipation (Max): 500mW (Ta) Vgs(th) (Max) @ Id: 1V @ 250µA Supplier Device Package: SOT-23 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 1.8V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 50 V Gate Charge (Qg) (Max) @ Vgs: 0.95 nC @ 4.5 V Input Capacitance (Ciss) (Max) @ Vds: 36 pF @ 25 V Grade: Automotive Qualification: AEC-Q101 |
auf Bestellung 3000 Stücke: Lieferzeit 21-28 Tag (e) |
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PJA3438-AU_R1_000A1 | Panjit International Inc. |
Description: SOT-23, MOSFET Packaging: Cut Tape (CT) Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 500mA (Ta) Rds On (Max) @ Id, Vgs: 1.45Ohm @ 500mA, 10V Power Dissipation (Max): 500mW (Ta) Vgs(th) (Max) @ Id: 1V @ 250µA Supplier Device Package: SOT-23 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 1.8V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 50 V Gate Charge (Qg) (Max) @ Vgs: 0.95 nC @ 4.5 V Input Capacitance (Ciss) (Max) @ Vds: 36 pF @ 25 V Grade: Automotive Qualification: AEC-Q101 |
auf Bestellung 4353 Stücke: Lieferzeit 21-28 Tag (e) |
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PJA3438_R1_00001 | Panjit International Inc. |
Description: SOT-23, MOSFET Packaging: Tape & Reel (TR) Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 500mA (Ta) Rds On (Max) @ Id, Vgs: 1.45Ohm @ 500mA, 10V Power Dissipation (Max): 500mW (Ta) Vgs(th) (Max) @ Id: 1V @ 250µA Supplier Device Package: SOT-23 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 1.8V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 50 V Gate Charge (Qg) (Max) @ Vgs: 0.95 nC @ 4.5 V Input Capacitance (Ciss) (Max) @ Vds: 36 pF @ 25 V |
auf Bestellung 12000 Stücke: Lieferzeit 21-28 Tag (e) |
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PJA3438_R1_00001 | Panjit International Inc. |
Description: SOT-23, MOSFET Packaging: Cut Tape (CT) Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 500mA (Ta) Rds On (Max) @ Id, Vgs: 1.45Ohm @ 500mA, 10V Power Dissipation (Max): 500mW (Ta) Vgs(th) (Max) @ Id: 1V @ 250µA Supplier Device Package: SOT-23 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 1.8V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 50 V Gate Charge (Qg) (Max) @ Vgs: 0.95 nC @ 4.5 V Input Capacitance (Ciss) (Max) @ Vds: 36 pF @ 25 V |
auf Bestellung 17248 Stücke: Lieferzeit 21-28 Tag (e) |
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PJA3439-AU_R1_000A1 | PanJit Semiconductor |
Category: SMD P channel transistors Description: Transistor: P-MOSFET; unipolar; -60V; -300mA; Idm: -1A; 500mW; SOT23 Mounting: SMD Application: automotive industry Drain current: -0.3A Power dissipation: 0.5W Polarisation: unipolar Drain-source voltage: -60V Kind of package: reel; tape Case: SOT23 Gate charge: 1.1nC Kind of channel: enhanced Gate-source voltage: ±20V Pulsed drain current: -1A On-state resistance: 13Ω Type of transistor: P-MOSFET |
auf Bestellung 1910 Stücke: Lieferzeit 14-21 Tag (e) |
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BA3430FS Produktcode: 77840 |
Hersteller: ROHM
IC > IC Analog
Gehäuse: SSOP-A24
Funktionsbeschreibung: Stereo pre-amplifiers with mute detection circuits for car stereos
Spannung: 18V
Temperaturbereich: -30...+85°C
IC > IC Analog
Gehäuse: SSOP-A24
Funktionsbeschreibung: Stereo pre-amplifiers with mute detection circuits for car stereos
Spannung: 18V
Temperaturbereich: -30...+85°C
auf Bestellung 8 Stück:
Lieferzeit 21-28 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
1+ | 2.02 EUR |
BP0EA3430A7TR |
Hersteller: KYOCERA AVX
Description: RF FILT BAND PASS 3.43GHZ 30ULGA
Packaging: Cut Tape (CT)
Package / Case: 30-ULGA
Filter Type: Band Pass
Size / Dimension: 0.460" L x 0.170" W (11.68mm x 4.32mm)
Mounting Type: Surface Mount
Frequency: 3.43GHz
Insertion Loss: 1dB
Bandwidth: 1.82GHz
Height (Max): 0.022" (0.56mm)
Description: RF FILT BAND PASS 3.43GHZ 30ULGA
Packaging: Cut Tape (CT)
Package / Case: 30-ULGA
Filter Type: Band Pass
Size / Dimension: 0.460" L x 0.170" W (11.68mm x 4.32mm)
Mounting Type: Surface Mount
Frequency: 3.43GHz
Insertion Loss: 1dB
Bandwidth: 1.82GHz
Height (Max): 0.022" (0.56mm)
auf Bestellung 197 Stücke:
Lieferzeit 21-28 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
1+ | 57.12 EUR |
10+ | 55.34 EUR |
25+ | 53.55 EUR |
50+ | 51.77 EUR |
100+ | 46.41 EUR |
CMFA3435103FNT |
Hersteller: Cantherm
Description: THERMISTOR NTC 10KOHM 3435K 0603
Packaging: Cut Tape (CT)
Package / Case: 0603 (1608 Metric)
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 125°C
B25/85: 3435K
B Value Tolerance: ±1%
Resistance in Ohms @ 25°C: 10k
Resistance Tolerance: ±1%
Part Status: Active
Power - Max: 100 mW
Description: THERMISTOR NTC 10KOHM 3435K 0603
Packaging: Cut Tape (CT)
Package / Case: 0603 (1608 Metric)
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 125°C
B25/85: 3435K
B Value Tolerance: ±1%
Resistance in Ohms @ 25°C: 10k
Resistance Tolerance: ±1%
Part Status: Active
Power - Max: 100 mW
auf Bestellung 10244 Stücke:
Lieferzeit 21-28 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
34+ | 0.78 EUR |
40+ | 0.65 EUR |
46+ | 0.57 EUR |
50+ | 0.54 EUR |
100+ | 0.46 EUR |
500+ | 0.38 EUR |
1000+ | 0.32 EUR |
CMFA3435103FNT |
Hersteller: Cantherm
Description: THERMISTOR NTC 10KOHM 3435K 0603
Packaging: Tape & Reel (TR)
Package / Case: 0603 (1608 Metric)
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 125°C
B25/85: 3435K
B Value Tolerance: ±1%
Resistance in Ohms @ 25°C: 10k
Resistance Tolerance: ±1%
Part Status: Active
Power - Max: 100 mW
Description: THERMISTOR NTC 10KOHM 3435K 0603
Packaging: Tape & Reel (TR)
Package / Case: 0603 (1608 Metric)
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 125°C
B25/85: 3435K
B Value Tolerance: ±1%
Resistance in Ohms @ 25°C: 10k
Resistance Tolerance: ±1%
Part Status: Active
Power - Max: 100 mW
auf Bestellung 4000 Stücke:
Lieferzeit 21-28 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
4000+ | 0.3 EUR |
GA343DR7GD472KW01L |
Hersteller: MURATA
Category: MLCC SMD capacitors
Description: Capacitor: ceramic; MLCC; 4.7nF; 250V; X7R; ±10%; SMD; 1812
Mounting: SMD
Operating temperature: -55...125°C
Operating voltage: 250V
Capacitors series: GA3
Capacitance: 4.7nF
Dielectric: X7R
Type of capacitor: ceramic
Tolerance: ±10%
Kind of capacitor: MLCC
Case - mm: 4532
Case - inch: 1812
Category: MLCC SMD capacitors
Description: Capacitor: ceramic; MLCC; 4.7nF; 250V; X7R; ±10%; SMD; 1812
Mounting: SMD
Operating temperature: -55...125°C
Operating voltage: 250V
Capacitors series: GA3
Capacitance: 4.7nF
Dielectric: X7R
Type of capacitor: ceramic
Tolerance: ±10%
Kind of capacitor: MLCC
Case - mm: 4532
Case - inch: 1812
auf Bestellung 4150 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
170+ | 0.43 EUR |
250+ | 0.29 EUR |
440+ | 0.17 EUR |
460+ | 0.16 EUR |
GA343DR7GD472KW01L |
Hersteller: MURATA
Category: MLCC SMD capacitors
Description: Capacitor: ceramic; MLCC; 4.7nF; 250V; X7R; ±10%; SMD; 1812
Mounting: SMD
Operating temperature: -55...125°C
Operating voltage: 250V
Capacitors series: GA3
Capacitance: 4.7nF
Dielectric: X7R
Type of capacitor: ceramic
Tolerance: ±10%
Kind of capacitor: MLCC
Case - mm: 4532
Case - inch: 1812
Anzahl je Verpackung: 10 Stücke
Category: MLCC SMD capacitors
Description: Capacitor: ceramic; MLCC; 4.7nF; 250V; X7R; ±10%; SMD; 1812
Mounting: SMD
Operating temperature: -55...125°C
Operating voltage: 250V
Capacitors series: GA3
Capacitance: 4.7nF
Dielectric: X7R
Type of capacitor: ceramic
Tolerance: ±10%
Kind of capacitor: MLCC
Case - mm: 4532
Case - inch: 1812
Anzahl je Verpackung: 10 Stücke
auf Bestellung 4150 Stücke:
Lieferzeit 7-14 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
170+ | 0.43 EUR |
250+ | 0.29 EUR |
440+ | 0.17 EUR |
460+ | 0.16 EUR |
GA343DR7GD472KW01L |
Hersteller: Murata Electronics
Cap Ceramic 0.0047uF 250VAC X7R 10% Pad SMD 1812 125C T/R
Cap Ceramic 0.0047uF 250VAC X7R 10% Pad SMD 1812 125C T/R
auf Bestellung 60000 Stücke:
Lieferzeit 14-21 Tag (e)GA343DR7GD472KW01L |
Hersteller: Murata Electronics
Description: CAP CER 4700PF 250VAC X7R 1812
Tolerance: ±10%
Packaging: Tape & Reel (TR)
Voltage - Rated: 250VAC
Package / Case: 1812 (4532 Metric)
Temperature Coefficient: X7R
Size / Dimension: 0.177" L x 0.126" W (4.50mm x 3.20mm)
Mounting Type: Surface Mount, MLCC
Operating Temperature: -55°C ~ 125°C
Applications: Safety
Ratings: Y3
Thickness (Max): 0.079" (2.00mm)
Capacitance: 4700 pF
Description: CAP CER 4700PF 250VAC X7R 1812
Tolerance: ±10%
Packaging: Tape & Reel (TR)
Voltage - Rated: 250VAC
Package / Case: 1812 (4532 Metric)
Temperature Coefficient: X7R
Size / Dimension: 0.177" L x 0.126" W (4.50mm x 3.20mm)
Mounting Type: Surface Mount, MLCC
Operating Temperature: -55°C ~ 125°C
Applications: Safety
Ratings: Y3
Thickness (Max): 0.079" (2.00mm)
Capacitance: 4700 pF
auf Bestellung 124000 Stücke:
Lieferzeit 21-28 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
1000+ | 1.54 EUR |
2000+ | 1.44 EUR |
5000+ | 1.38 EUR |
10000+ | 1.33 EUR |
GA343DR7GD472KW01L |
Hersteller: Murata Electronics
Description: CAP CER 4700PF 250VAC X7R 1812
Tolerance: ±10%
Packaging: Cut Tape (CT)
Voltage - Rated: 250VAC
Package / Case: 1812 (4532 Metric)
Temperature Coefficient: X7R
Size / Dimension: 0.177" L x 0.126" W (4.50mm x 3.20mm)
Mounting Type: Surface Mount, MLCC
Operating Temperature: -55°C ~ 125°C
Applications: Safety
Ratings: Y3
Thickness (Max): 0.079" (2.00mm)
Capacitance: 4700 pF
Description: CAP CER 4700PF 250VAC X7R 1812
Tolerance: ±10%
Packaging: Cut Tape (CT)
Voltage - Rated: 250VAC
Package / Case: 1812 (4532 Metric)
Temperature Coefficient: X7R
Size / Dimension: 0.177" L x 0.126" W (4.50mm x 3.20mm)
Mounting Type: Surface Mount, MLCC
Operating Temperature: -55°C ~ 125°C
Applications: Safety
Ratings: Y3
Thickness (Max): 0.079" (2.00mm)
Capacitance: 4700 pF
auf Bestellung 126341 Stücke:
Lieferzeit 21-28 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
7+ | 3.9 EUR |
10+ | 2.92 EUR |
50+ | 2.67 EUR |
100+ | 2.18 EUR |
500+ | 1.74 EUR |
GA343QR7GD182KW01L |
Hersteller: Murata Electronics
Description: CAP CER 1800PF 250VAC X7R 1812
Tolerance: ±10%
Packaging: Cut Tape (CT)
Voltage - Rated: 250VAC
Package / Case: 1812 (4532 Metric)
Temperature Coefficient: X7R
Size / Dimension: 0.177" L x 0.126" W (4.50mm x 3.20mm)
Mounting Type: Surface Mount, MLCC
Operating Temperature: -55°C ~ 125°C
Applications: Safety
Ratings: Y3
Thickness (Max): 0.059" (1.50mm)
Capacitance: 1800 pF
Description: CAP CER 1800PF 250VAC X7R 1812
Tolerance: ±10%
Packaging: Cut Tape (CT)
Voltage - Rated: 250VAC
Package / Case: 1812 (4532 Metric)
Temperature Coefficient: X7R
Size / Dimension: 0.177" L x 0.126" W (4.50mm x 3.20mm)
Mounting Type: Surface Mount, MLCC
Operating Temperature: -55°C ~ 125°C
Applications: Safety
Ratings: Y3
Thickness (Max): 0.059" (1.50mm)
Capacitance: 1800 pF
auf Bestellung 1900 Stücke:
Lieferzeit 21-28 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
7+ | 3.9 EUR |
10+ | 2.92 EUR |
50+ | 2.67 EUR |
100+ | 2.18 EUR |
500+ | 1.74 EUR |
GA343QR7GD182KW01L |
Hersteller: Murata Electronics
Description: CAP CER 1800PF 250VAC X7R 1812
Tolerance: ±10%
Packaging: Tape & Reel (TR)
Voltage - Rated: 250VAC
Package / Case: 1812 (4532 Metric)
Temperature Coefficient: X7R
Size / Dimension: 0.177" L x 0.126" W (4.50mm x 3.20mm)
Mounting Type: Surface Mount, MLCC
Operating Temperature: -55°C ~ 125°C
Applications: Safety
Ratings: Y3
Thickness (Max): 0.059" (1.50mm)
Capacitance: 1800 pF
Description: CAP CER 1800PF 250VAC X7R 1812
Tolerance: ±10%
Packaging: Tape & Reel (TR)
Voltage - Rated: 250VAC
Package / Case: 1812 (4532 Metric)
Temperature Coefficient: X7R
Size / Dimension: 0.177" L x 0.126" W (4.50mm x 3.20mm)
Mounting Type: Surface Mount, MLCC
Operating Temperature: -55°C ~ 125°C
Applications: Safety
Ratings: Y3
Thickness (Max): 0.059" (1.50mm)
Capacitance: 1800 pF
auf Bestellung 1000 Stücke:
Lieferzeit 21-28 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
1000+ | 1.54 EUR |
GA343QR7GD222KW01L |
Hersteller: Murata Electronics
Description: CAP CER 2200PF 250VAC X7R 1812
Tolerance: ±10%
Packaging: Cut Tape (CT)
Voltage - Rated: 250VAC
Package / Case: 1812 (4532 Metric)
Temperature Coefficient: X7R
Size / Dimension: 0.177" L x 0.126" W (4.50mm x 3.20mm)
Mounting Type: Surface Mount, MLCC
Operating Temperature: -55°C ~ 125°C
Applications: Safety
Ratings: Y3
Thickness (Max): 0.059" (1.50mm)
Part Status: Active
Capacitance: 2200 pF
Description: CAP CER 2200PF 250VAC X7R 1812
Tolerance: ±10%
Packaging: Cut Tape (CT)
Voltage - Rated: 250VAC
Package / Case: 1812 (4532 Metric)
Temperature Coefficient: X7R
Size / Dimension: 0.177" L x 0.126" W (4.50mm x 3.20mm)
Mounting Type: Surface Mount, MLCC
Operating Temperature: -55°C ~ 125°C
Applications: Safety
Ratings: Y3
Thickness (Max): 0.059" (1.50mm)
Part Status: Active
Capacitance: 2200 pF
auf Bestellung 64561 Stücke:
Lieferzeit 21-28 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
10+ | 2.68 EUR |
13+ | 2.02 EUR |
50+ | 1.84 EUR |
100+ | 1.51 EUR |
500+ | 1.24 EUR |
GA343QR7GD222KW01L |
Hersteller: Murata Electronics
Description: CAP CER 2200PF 250VAC X7R 1812
Tolerance: ±10%
Packaging: Tape & Reel (TR)
Voltage - Rated: 250VAC
Package / Case: 1812 (4532 Metric)
Temperature Coefficient: X7R
Size / Dimension: 0.177" L x 0.126" W (4.50mm x 3.20mm)
Mounting Type: Surface Mount, MLCC
Operating Temperature: -55°C ~ 125°C
Applications: Safety
Ratings: Y3
Thickness (Max): 0.059" (1.50mm)
Part Status: Active
Capacitance: 2200 pF
Description: CAP CER 2200PF 250VAC X7R 1812
Tolerance: ±10%
Packaging: Tape & Reel (TR)
Voltage - Rated: 250VAC
Package / Case: 1812 (4532 Metric)
Temperature Coefficient: X7R
Size / Dimension: 0.177" L x 0.126" W (4.50mm x 3.20mm)
Mounting Type: Surface Mount, MLCC
Operating Temperature: -55°C ~ 125°C
Applications: Safety
Ratings: Y3
Thickness (Max): 0.059" (1.50mm)
Part Status: Active
Capacitance: 2200 pF
auf Bestellung 62000 Stücke:
Lieferzeit 21-28 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
1000+ | 1.24 EUR |
OPA343NA |
Hersteller: Texas Instruments
CMOS R-R I/O Op-Amp, GBW 5.5MHz, SR 6V/us, Voff 2mV, 2.5?5.5V, -40?85°C OPA343NA WO343OPA na
Anzahl je Verpackung: 10 Stücke
CMOS R-R I/O Op-Amp, GBW 5.5MHz, SR 6V/us, Voff 2mV, 2.5?5.5V, -40?85°C OPA343NA WO343OPA na
Anzahl je Verpackung: 10 Stücke
auf Bestellung 90 Stücke:
Lieferzeit 7-14 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
10+ | 8.97 EUR |
OPA343NA/250 |
Hersteller: Texas Instruments
Description: IC OPAMP GP 1 CIRCUIT SOT23-5
Packaging: Cut Tape (CT)
Package / Case: SC-74A, SOT-753
Output Type: Rail-to-Rail
Mounting Type: Surface Mount
Amplifier Type: General Purpose
Operating Temperature: -40°C ~ 85°C
Current - Supply: 850µA
Slew Rate: 6V/µs
Gain Bandwidth Product: 5.5 MHz
Current - Input Bias: 0.2 pA
Voltage - Input Offset: 2 mV
Supplier Device Package: SOT-23-5
Part Status: Active
Number of Circuits: 1
Current - Output / Channel: 50 mA
Voltage - Supply Span (Min): 2.5 V
Voltage - Supply Span (Max): 5.5 V
Description: IC OPAMP GP 1 CIRCUIT SOT23-5
Packaging: Cut Tape (CT)
Package / Case: SC-74A, SOT-753
Output Type: Rail-to-Rail
Mounting Type: Surface Mount
Amplifier Type: General Purpose
Operating Temperature: -40°C ~ 85°C
Current - Supply: 850µA
Slew Rate: 6V/µs
Gain Bandwidth Product: 5.5 MHz
Current - Input Bias: 0.2 pA
Voltage - Input Offset: 2 mV
Supplier Device Package: SOT-23-5
Part Status: Active
Number of Circuits: 1
Current - Output / Channel: 50 mA
Voltage - Supply Span (Min): 2.5 V
Voltage - Supply Span (Max): 5.5 V
auf Bestellung 870 Stücke:
Lieferzeit 21-28 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
4+ | 6.79 EUR |
10+ | 6.09 EUR |
25+ | 5.76 EUR |
100+ | 4.99 EUR |
OPA343NA/250 |
Hersteller: Texas Instruments
Description: IC OPAMP GP 1 CIRCUIT SOT23-5
Packaging: Tape & Reel (TR)
Package / Case: SC-74A, SOT-753
Output Type: Rail-to-Rail
Mounting Type: Surface Mount
Amplifier Type: General Purpose
Operating Temperature: -40°C ~ 85°C
Current - Supply: 850µA
Slew Rate: 6V/µs
Gain Bandwidth Product: 5.5 MHz
Current - Input Bias: 0.2 pA
Voltage - Input Offset: 2 mV
Supplier Device Package: SOT-23-5
Part Status: Active
Number of Circuits: 1
Current - Output / Channel: 50 mA
Voltage - Supply Span (Min): 2.5 V
Voltage - Supply Span (Max): 5.5 V
Description: IC OPAMP GP 1 CIRCUIT SOT23-5
Packaging: Tape & Reel (TR)
Package / Case: SC-74A, SOT-753
Output Type: Rail-to-Rail
Mounting Type: Surface Mount
Amplifier Type: General Purpose
Operating Temperature: -40°C ~ 85°C
Current - Supply: 850µA
Slew Rate: 6V/µs
Gain Bandwidth Product: 5.5 MHz
Current - Input Bias: 0.2 pA
Voltage - Input Offset: 2 mV
Supplier Device Package: SOT-23-5
Part Status: Active
Number of Circuits: 1
Current - Output / Channel: 50 mA
Voltage - Supply Span (Min): 2.5 V
Voltage - Supply Span (Max): 5.5 V
auf Bestellung 750 Stücke:
Lieferzeit 21-28 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
250+ | 4.74 EUR |
500+ | 4.25 EUR |
OPA343NA/3K |
Hersteller: Texas Instruments
Description: IC OPAMP GP 1 CIRCUIT SOT23-5
Packaging: Cut Tape (CT)
Package / Case: SC-74A, SOT-753
Output Type: Rail-to-Rail
Mounting Type: Surface Mount
Amplifier Type: General Purpose
Operating Temperature: -40°C ~ 85°C
Current - Supply: 850µA
Slew Rate: 6V/µs
Gain Bandwidth Product: 5.5 MHz
Current - Input Bias: 0.2 pA
Voltage - Input Offset: 2 mV
Supplier Device Package: SOT-23-5
Part Status: Active
Number of Circuits: 1
Current - Output / Channel: 50 mA
Voltage - Supply Span (Min): 2.5 V
Voltage - Supply Span (Max): 5.5 V
Description: IC OPAMP GP 1 CIRCUIT SOT23-5
Packaging: Cut Tape (CT)
Package / Case: SC-74A, SOT-753
Output Type: Rail-to-Rail
Mounting Type: Surface Mount
Amplifier Type: General Purpose
Operating Temperature: -40°C ~ 85°C
Current - Supply: 850µA
Slew Rate: 6V/µs
Gain Bandwidth Product: 5.5 MHz
Current - Input Bias: 0.2 pA
Voltage - Input Offset: 2 mV
Supplier Device Package: SOT-23-5
Part Status: Active
Number of Circuits: 1
Current - Output / Channel: 50 mA
Voltage - Supply Span (Min): 2.5 V
Voltage - Supply Span (Max): 5.5 V
auf Bestellung 5915 Stücke:
Lieferzeit 21-28 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
4+ | 6.55 EUR |
10+ | 5.88 EUR |
25+ | 5.55 EUR |
100+ | 4.73 EUR |
250+ | 4.44 EUR |
500+ | 3.88 EUR |
1000+ | 3.22 EUR |
OPA343NA/3K |
Hersteller: Texas Instruments
Description: IC OPAMP GP 1 CIRCUIT SOT23-5
Packaging: Tape & Reel (TR)
Package / Case: SC-74A, SOT-753
Output Type: Rail-to-Rail
Mounting Type: Surface Mount
Amplifier Type: General Purpose
Operating Temperature: -40°C ~ 85°C
Current - Supply: 850µA
Slew Rate: 6V/µs
Gain Bandwidth Product: 5.5 MHz
Current - Input Bias: 0.2 pA
Voltage - Input Offset: 2 mV
Supplier Device Package: SOT-23-5
Part Status: Active
Number of Circuits: 1
Current - Output / Channel: 50 mA
Voltage - Supply Span (Min): 2.5 V
Voltage - Supply Span (Max): 5.5 V
Description: IC OPAMP GP 1 CIRCUIT SOT23-5
Packaging: Tape & Reel (TR)
Package / Case: SC-74A, SOT-753
Output Type: Rail-to-Rail
Mounting Type: Surface Mount
Amplifier Type: General Purpose
Operating Temperature: -40°C ~ 85°C
Current - Supply: 850µA
Slew Rate: 6V/µs
Gain Bandwidth Product: 5.5 MHz
Current - Input Bias: 0.2 pA
Voltage - Input Offset: 2 mV
Supplier Device Package: SOT-23-5
Part Status: Active
Number of Circuits: 1
Current - Output / Channel: 50 mA
Voltage - Supply Span (Min): 2.5 V
Voltage - Supply Span (Max): 5.5 V
auf Bestellung 3000 Stücke:
Lieferzeit 21-28 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
3000+ | 3 EUR |
OPA343UA |
Hersteller: TEXAS INSTRUMENTS
Category: SMD operational amplifiers
Description: IC: operational amplifier; 5.5MHz; Ch: 1; SO8
Mounting: SMT
Operating temperature: -40...85°C
Case: SO8
Slew rate: 6V/μs
Voltage supply range: ± 1.25...2.75V DC; 2.5...5.5V DC
Type of integrated circuit: operational amplifier
Number of channels: 1
Bandwidth: 5.5MHz
Category: SMD operational amplifiers
Description: IC: operational amplifier; 5.5MHz; Ch: 1; SO8
Mounting: SMT
Operating temperature: -40...85°C
Case: SO8
Slew rate: 6V/μs
Voltage supply range: ± 1.25...2.75V DC; 2.5...5.5V DC
Type of integrated circuit: operational amplifier
Number of channels: 1
Bandwidth: 5.5MHz
auf Bestellung 94 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
19+ | 3.79 EUR |
22+ | 3.35 EUR |
25+ | 2.92 EUR |
27+ | 2.75 EUR |
75+ | 2.63 EUR |
OPA343UA |
Hersteller: TEXAS INSTRUMENTS
Category: SMD operational amplifiers
Description: IC: operational amplifier; 5.5MHz; Ch: 1; SO8
Mounting: SMT
Operating temperature: -40...85°C
Case: SO8
Slew rate: 6V/μs
Voltage supply range: ± 1.25...2.75V DC; 2.5...5.5V DC
Type of integrated circuit: operational amplifier
Number of channels: 1
Bandwidth: 5.5MHz
Anzahl je Verpackung: 1 Stücke
Category: SMD operational amplifiers
Description: IC: operational amplifier; 5.5MHz; Ch: 1; SO8
Mounting: SMT
Operating temperature: -40...85°C
Case: SO8
Slew rate: 6V/μs
Voltage supply range: ± 1.25...2.75V DC; 2.5...5.5V DC
Type of integrated circuit: operational amplifier
Number of channels: 1
Bandwidth: 5.5MHz
Anzahl je Verpackung: 1 Stücke
auf Bestellung 94 Stücke:
Lieferzeit 7-14 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
19+ | 3.79 EUR |
22+ | 3.35 EUR |
25+ | 2.92 EUR |
27+ | 2.75 EUR |
75+ | 2.63 EUR |
OPA343UA |
Hersteller: Texas Instruments
Description: IC OPAMP GP 1 CIRCUIT 8SOIC
Packaging: Tube
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Output Type: Rail-to-Rail
Mounting Type: Surface Mount
Amplifier Type: General Purpose
Operating Temperature: -40°C ~ 85°C
Current - Supply: 850µA
Slew Rate: 6V/µs
Gain Bandwidth Product: 5.5 MHz
Current - Input Bias: 0.2 pA
Voltage - Input Offset: 2 mV
Supplier Device Package: 8-SOIC
Part Status: Active
Number of Circuits: 1
Current - Output / Channel: 50 mA
Voltage - Supply Span (Min): 2.5 V
Voltage - Supply Span (Max): 5.5 V
Description: IC OPAMP GP 1 CIRCUIT 8SOIC
Packaging: Tube
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Output Type: Rail-to-Rail
Mounting Type: Surface Mount
Amplifier Type: General Purpose
Operating Temperature: -40°C ~ 85°C
Current - Supply: 850µA
Slew Rate: 6V/µs
Gain Bandwidth Product: 5.5 MHz
Current - Input Bias: 0.2 pA
Voltage - Input Offset: 2 mV
Supplier Device Package: 8-SOIC
Part Status: Active
Number of Circuits: 1
Current - Output / Channel: 50 mA
Voltage - Supply Span (Min): 2.5 V
Voltage - Supply Span (Max): 5.5 V
auf Bestellung 470 Stücke:
Lieferzeit 21-28 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
4+ | 6.79 EUR |
10+ | 6.09 EUR |
75+ | 5.76 EUR |
150+ | 4.99 EUR |
300+ | 4.74 EUR |
OPA343UA/2K5 |
Hersteller: Texas Instruments
Description: IC OPAMP GP 1 CIRCUIT 8SOIC
Packaging: Cut Tape (CT)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Output Type: Rail-to-Rail
Mounting Type: Surface Mount
Amplifier Type: General Purpose
Operating Temperature: -40°C ~ 85°C
Current - Supply: 850µA
Slew Rate: 6V/µs
Gain Bandwidth Product: 5.5 MHz
Current - Input Bias: 0.2 pA
Voltage - Input Offset: 2 mV
Supplier Device Package: 8-SOIC
Part Status: Active
Number of Circuits: 1
Current - Output / Channel: 50 mA
Voltage - Supply Span (Min): 2.5 V
Voltage - Supply Span (Max): 5.5 V
Description: IC OPAMP GP 1 CIRCUIT 8SOIC
Packaging: Cut Tape (CT)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Output Type: Rail-to-Rail
Mounting Type: Surface Mount
Amplifier Type: General Purpose
Operating Temperature: -40°C ~ 85°C
Current - Supply: 850µA
Slew Rate: 6V/µs
Gain Bandwidth Product: 5.5 MHz
Current - Input Bias: 0.2 pA
Voltage - Input Offset: 2 mV
Supplier Device Package: 8-SOIC
Part Status: Active
Number of Circuits: 1
Current - Output / Channel: 50 mA
Voltage - Supply Span (Min): 2.5 V
Voltage - Supply Span (Max): 5.5 V
auf Bestellung 1559 Stücke:
Lieferzeit 21-28 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
4+ | 6.55 EUR |
10+ | 5.88 EUR |
25+ | 5.55 EUR |
100+ | 4.73 EUR |
250+ | 4.44 EUR |
500+ | 3.88 EUR |
1000+ | 3.22 EUR |
OPA343UA/2K5 |
Hersteller: Texas Instruments
Description: IC OPAMP GP 1 CIRCUIT 8SOIC
Packaging: Bulk
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Output Type: Rail-to-Rail
Mounting Type: Surface Mount
Amplifier Type: General Purpose
Operating Temperature: -40°C ~ 85°C
Current - Supply: 850µA
Slew Rate: 6V/µs
Gain Bandwidth Product: 5.5 MHz
Current - Input Bias: 0.2 pA
Voltage - Input Offset: 2 mV
Supplier Device Package: 8-SOIC
Part Status: Active
Number of Circuits: 1
Current - Output / Channel: 50 mA
Voltage - Supply Span (Min): 2.5 V
Voltage - Supply Span (Max): 5.5 V
Description: IC OPAMP GP 1 CIRCUIT 8SOIC
Packaging: Bulk
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Output Type: Rail-to-Rail
Mounting Type: Surface Mount
Amplifier Type: General Purpose
Operating Temperature: -40°C ~ 85°C
Current - Supply: 850µA
Slew Rate: 6V/µs
Gain Bandwidth Product: 5.5 MHz
Current - Input Bias: 0.2 pA
Voltage - Input Offset: 2 mV
Supplier Device Package: 8-SOIC
Part Status: Active
Number of Circuits: 1
Current - Output / Channel: 50 mA
Voltage - Supply Span (Min): 2.5 V
Voltage - Supply Span (Max): 5.5 V
auf Bestellung 26524 Stücke:
Lieferzeit 21-28 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
228+ | 3.17 EUR |
PJA3430_R1_00001 |
Hersteller: PanJit Semiconductor
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 20V; 2A; Idm: 8A; 1.25W; SOT23
Mounting: SMD
Drain current: 2A
Power dissipation: 1.25W
Polarisation: unipolar
Drain-source voltage: 20V
Kind of package: reel; tape
Case: SOT23
Gate charge: 1.8nC
Kind of channel: enhanced
Gate-source voltage: ±8V
Pulsed drain current: 8A
On-state resistance: 0.4Ω
Type of transistor: N-MOSFET
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 20V; 2A; Idm: 8A; 1.25W; SOT23
Mounting: SMD
Drain current: 2A
Power dissipation: 1.25W
Polarisation: unipolar
Drain-source voltage: 20V
Kind of package: reel; tape
Case: SOT23
Gate charge: 1.8nC
Kind of channel: enhanced
Gate-source voltage: ±8V
Pulsed drain current: 8A
On-state resistance: 0.4Ω
Type of transistor: N-MOSFET
auf Bestellung 2590 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
715+ | 0.1 EUR |
830+ | 0.086 EUR |
1010+ | 0.071 EUR |
1065+ | 0.067 EUR |
PJA3430_R1_00001 |
Hersteller: PanJit Semiconductor
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 20V; 2A; Idm: 8A; 1.25W; SOT23
Mounting: SMD
Drain current: 2A
Power dissipation: 1.25W
Polarisation: unipolar
Drain-source voltage: 20V
Kind of package: reel; tape
Case: SOT23
Gate charge: 1.8nC
Kind of channel: enhanced
Gate-source voltage: ±8V
Pulsed drain current: 8A
On-state resistance: 0.4Ω
Type of transistor: N-MOSFET
Anzahl je Verpackung: 5 Stücke
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 20V; 2A; Idm: 8A; 1.25W; SOT23
Mounting: SMD
Drain current: 2A
Power dissipation: 1.25W
Polarisation: unipolar
Drain-source voltage: 20V
Kind of package: reel; tape
Case: SOT23
Gate charge: 1.8nC
Kind of channel: enhanced
Gate-source voltage: ±8V
Pulsed drain current: 8A
On-state resistance: 0.4Ω
Type of transistor: N-MOSFET
Anzahl je Verpackung: 5 Stücke
auf Bestellung 2590 Stücke:
Lieferzeit 7-14 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
715+ | 0.1 EUR |
830+ | 0.086 EUR |
1010+ | 0.071 EUR |
1065+ | 0.067 EUR |
3000+ | 0.065 EUR |
PJA3430_R1_00001 |
Hersteller: Panjit International Inc.
Description: SOT-23, MOSFET
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 2A (Ta)
Rds On (Max) @ Id, Vgs: 150mOhm @ 2A, 4.5V
Power Dissipation (Max): 1.25W (Ta)
Vgs(th) (Max) @ Id: 1V @ 250µA
Supplier Device Package: SOT-23
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
Vgs (Max): ±8V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 1.8 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 92 pF @ 10 V
Description: SOT-23, MOSFET
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 2A (Ta)
Rds On (Max) @ Id, Vgs: 150mOhm @ 2A, 4.5V
Power Dissipation (Max): 1.25W (Ta)
Vgs(th) (Max) @ Id: 1V @ 250µA
Supplier Device Package: SOT-23
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
Vgs (Max): ±8V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 1.8 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 92 pF @ 10 V
auf Bestellung 27000 Stücke:
Lieferzeit 21-28 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
3000+ | 0.14 EUR |
6000+ | 0.13 EUR |
9000+ | 0.1 EUR |
PJA3430_R1_00001 |
Hersteller: Panjit International Inc.
Description: SOT-23, MOSFET
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 2A (Ta)
Rds On (Max) @ Id, Vgs: 150mOhm @ 2A, 4.5V
Power Dissipation (Max): 1.25W (Ta)
Vgs(th) (Max) @ Id: 1V @ 250µA
Supplier Device Package: SOT-23
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
Vgs (Max): ±8V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 1.8 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 92 pF @ 10 V
Description: SOT-23, MOSFET
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 2A (Ta)
Rds On (Max) @ Id, Vgs: 150mOhm @ 2A, 4.5V
Power Dissipation (Max): 1.25W (Ta)
Vgs(th) (Max) @ Id: 1V @ 250µA
Supplier Device Package: SOT-23
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
Vgs (Max): ±8V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 1.8 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 92 pF @ 10 V
auf Bestellung 29205 Stücke:
Lieferzeit 21-28 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
34+ | 0.78 EUR |
48+ | 0.55 EUR |
100+ | 0.27 EUR |
500+ | 0.22 EUR |
1000+ | 0.16 EUR |
PJA3431_R1_00001 |
Hersteller: Panjit International Inc.
Description: 30V P-CHANNEL ENHANCEMENT MODE M
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 1.5A (Ta)
Rds On (Max) @ Id, Vgs: 325mOhm @ 1.5A, 4.5V
Power Dissipation (Max): 1.25W (Ta)
Vgs(th) (Max) @ Id: 1V @ 250µA
Supplier Device Package: SOT-23
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
Vgs (Max): ±8V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 1.7 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 165 pF @ 10 V
Description: 30V P-CHANNEL ENHANCEMENT MODE M
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 1.5A (Ta)
Rds On (Max) @ Id, Vgs: 325mOhm @ 1.5A, 4.5V
Power Dissipation (Max): 1.25W (Ta)
Vgs(th) (Max) @ Id: 1V @ 250µA
Supplier Device Package: SOT-23
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
Vgs (Max): ±8V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 1.7 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 165 pF @ 10 V
auf Bestellung 3000 Stücke:
Lieferzeit 21-28 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
3000+ | 0.14 EUR |
PJA3431_R1_00001 |
Hersteller: Panjit International Inc.
Description: 30V P-CHANNEL ENHANCEMENT MODE M
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 1.5A (Ta)
Rds On (Max) @ Id, Vgs: 325mOhm @ 1.5A, 4.5V
Power Dissipation (Max): 1.25W (Ta)
Vgs(th) (Max) @ Id: 1V @ 250µA
Supplier Device Package: SOT-23
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
Vgs (Max): ±8V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 1.7 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 165 pF @ 10 V
Description: 30V P-CHANNEL ENHANCEMENT MODE M
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 1.5A (Ta)
Rds On (Max) @ Id, Vgs: 325mOhm @ 1.5A, 4.5V
Power Dissipation (Max): 1.25W (Ta)
Vgs(th) (Max) @ Id: 1V @ 250µA
Supplier Device Package: SOT-23
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
Vgs (Max): ±8V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 1.7 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 165 pF @ 10 V
auf Bestellung 3873 Stücke:
Lieferzeit 21-28 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
34+ | 0.78 EUR |
48+ | 0.55 EUR |
100+ | 0.27 EUR |
500+ | 0.22 EUR |
1000+ | 0.16 EUR |
PJA3432-AU_R1_000A1 |
Hersteller: PanJit Semiconductor
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 1.6A; Idm: 6.4A; 1.25W; SOT23
Mounting: SMD
Application: automotive industry
Drain current: 1.6A
Power dissipation: 1.25W
Polarisation: unipolar
Drain-source voltage: 30V
Kind of package: reel; tape
Case: SOT23
Gate charge: 1.5nC
Kind of channel: enhanced
Gate-source voltage: ±8V
Pulsed drain current: 6.4A
On-state resistance: 570mΩ
Type of transistor: N-MOSFET
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 1.6A; Idm: 6.4A; 1.25W; SOT23
Mounting: SMD
Application: automotive industry
Drain current: 1.6A
Power dissipation: 1.25W
Polarisation: unipolar
Drain-source voltage: 30V
Kind of package: reel; tape
Case: SOT23
Gate charge: 1.5nC
Kind of channel: enhanced
Gate-source voltage: ±8V
Pulsed drain current: 6.4A
On-state resistance: 570mΩ
Type of transistor: N-MOSFET
auf Bestellung 2725 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
360+ | 0.2 EUR |
645+ | 0.11 EUR |
720+ | 0.1 EUR |
875+ | 0.082 EUR |
925+ | 0.078 EUR |
PJA3432-AU_R1_000A1 |
Hersteller: PanJit Semiconductor
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 1.6A; Idm: 6.4A; 1.25W; SOT23
Mounting: SMD
Application: automotive industry
Drain current: 1.6A
Power dissipation: 1.25W
Polarisation: unipolar
Drain-source voltage: 30V
Kind of package: reel; tape
Case: SOT23
Gate charge: 1.5nC
Kind of channel: enhanced
Gate-source voltage: ±8V
Pulsed drain current: 6.4A
On-state resistance: 570mΩ
Type of transistor: N-MOSFET
Anzahl je Verpackung: 5 Stücke
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 1.6A; Idm: 6.4A; 1.25W; SOT23
Mounting: SMD
Application: automotive industry
Drain current: 1.6A
Power dissipation: 1.25W
Polarisation: unipolar
Drain-source voltage: 30V
Kind of package: reel; tape
Case: SOT23
Gate charge: 1.5nC
Kind of channel: enhanced
Gate-source voltage: ±8V
Pulsed drain current: 6.4A
On-state resistance: 570mΩ
Type of transistor: N-MOSFET
Anzahl je Verpackung: 5 Stücke
auf Bestellung 2725 Stücke:
Lieferzeit 7-14 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
360+ | 0.2 EUR |
645+ | 0.11 EUR |
720+ | 0.1 EUR |
875+ | 0.082 EUR |
925+ | 0.078 EUR |
9000+ | 0.075 EUR |
PJA3432-AU_R1_000A1 |
Hersteller: Panjit International Inc.
Description: SOT-23, MOSFET
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 1.6A (Ta)
Rds On (Max) @ Id, Vgs: 200mOhm @ 1.6A, 4.5V
Power Dissipation (Max): 1.25W (Ta)
Vgs(th) (Max) @ Id: 1.3V @ 250µA
Supplier Device Package: SOT-23
Grade: Automotive
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
Vgs (Max): ±8V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 1.5 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 93 pF @ 15 V
Qualification: AEC-Q101
Description: SOT-23, MOSFET
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 1.6A (Ta)
Rds On (Max) @ Id, Vgs: 200mOhm @ 1.6A, 4.5V
Power Dissipation (Max): 1.25W (Ta)
Vgs(th) (Max) @ Id: 1.3V @ 250µA
Supplier Device Package: SOT-23
Grade: Automotive
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
Vgs (Max): ±8V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 1.5 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 93 pF @ 15 V
Qualification: AEC-Q101
auf Bestellung 75000 Stücke:
Lieferzeit 21-28 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
3000+ | 0.13 EUR |
6000+ | 0.12 EUR |
9000+ | 0.099 EUR |
30000+ | 0.097 EUR |
75000+ | 0.087 EUR |
PJA3432-AU_R1_000A1 |
Hersteller: Panjit International Inc.
Description: SOT-23, MOSFET
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 1.6A (Ta)
Rds On (Max) @ Id, Vgs: 200mOhm @ 1.6A, 4.5V
Power Dissipation (Max): 1.25W (Ta)
Vgs(th) (Max) @ Id: 1.3V @ 250µA
Supplier Device Package: SOT-23
Grade: Automotive
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
Vgs (Max): ±8V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 1.5 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 93 pF @ 15 V
Qualification: AEC-Q101
Description: SOT-23, MOSFET
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 1.6A (Ta)
Rds On (Max) @ Id, Vgs: 200mOhm @ 1.6A, 4.5V
Power Dissipation (Max): 1.25W (Ta)
Vgs(th) (Max) @ Id: 1.3V @ 250µA
Supplier Device Package: SOT-23
Grade: Automotive
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
Vgs (Max): ±8V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 1.5 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 93 pF @ 15 V
Qualification: AEC-Q101
auf Bestellung 75722 Stücke:
Lieferzeit 21-28 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
34+ | 0.78 EUR |
50+ | 0.53 EUR |
102+ | 0.26 EUR |
500+ | 0.21 EUR |
1000+ | 0.15 EUR |
PJA3432_R1_00001 |
Hersteller: Panjit International Inc.
Description: SOT-23, MOSFET
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 1.6A (Ta)
Rds On (Max) @ Id, Vgs: 200mOhm @ 1.6A, 4,5V
Power Dissipation (Max): 1.25W (Ta)
Vgs(th) (Max) @ Id: 1.3V @ 250µA
Supplier Device Package: SOT-23
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
Vgs (Max): ±8V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 1.5 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 93 pF @ 15 V
Description: SOT-23, MOSFET
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 1.6A (Ta)
Rds On (Max) @ Id, Vgs: 200mOhm @ 1.6A, 4,5V
Power Dissipation (Max): 1.25W (Ta)
Vgs(th) (Max) @ Id: 1.3V @ 250µA
Supplier Device Package: SOT-23
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
Vgs (Max): ±8V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 1.5 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 93 pF @ 15 V
auf Bestellung 18000 Stücke:
Lieferzeit 21-28 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
3000+ | 0.095 EUR |
6000+ | 0.088 EUR |
9000+ | 0.076 EUR |
PJA3432_R1_00001 |
Hersteller: Panjit International Inc.
Description: SOT-23, MOSFET
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 1.6A (Ta)
Rds On (Max) @ Id, Vgs: 200mOhm @ 1.6A, 4,5V
Power Dissipation (Max): 1.25W (Ta)
Vgs(th) (Max) @ Id: 1.3V @ 250µA
Supplier Device Package: SOT-23
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
Vgs (Max): ±8V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 1.5 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 93 pF @ 15 V
Description: SOT-23, MOSFET
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 1.6A (Ta)
Rds On (Max) @ Id, Vgs: 200mOhm @ 1.6A, 4,5V
Power Dissipation (Max): 1.25W (Ta)
Vgs(th) (Max) @ Id: 1.3V @ 250µA
Supplier Device Package: SOT-23
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
Vgs (Max): ±8V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 1.5 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 93 pF @ 15 V
auf Bestellung 27013 Stücke:
Lieferzeit 21-28 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
34+ | 0.78 EUR |
48+ | 0.55 EUR |
100+ | 0.27 EUR |
500+ | 0.22 EUR |
1000+ | 0.16 EUR |
PJA3433-AU_R1_000A1 |
Hersteller: PanJit Semiconductor
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -30V; -1.1A; Idm: -4.4A; 1.25W
Mounting: SMD
Application: automotive industry
Drain current: -1.1A
Power dissipation: 1.25W
Polarisation: unipolar
Drain-source voltage: -30V
Kind of package: reel; tape
Case: SOT23
Gate charge: 1.6nC
Kind of channel: enhanced
Gate-source voltage: ±8V
Pulsed drain current: -4.4A
On-state resistance: 0.97Ω
Type of transistor: P-MOSFET
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -30V; -1.1A; Idm: -4.4A; 1.25W
Mounting: SMD
Application: automotive industry
Drain current: -1.1A
Power dissipation: 1.25W
Polarisation: unipolar
Drain-source voltage: -30V
Kind of package: reel; tape
Case: SOT23
Gate charge: 1.6nC
Kind of channel: enhanced
Gate-source voltage: ±8V
Pulsed drain current: -4.4A
On-state resistance: 0.97Ω
Type of transistor: P-MOSFET
auf Bestellung 3000 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
365+ | 0.2 EUR |
585+ | 0.12 EUR |
650+ | 0.11 EUR |
795+ | 0.09 EUR |
835+ | 0.086 EUR |
PJA3433-AU_R1_000A1 |
Hersteller: PanJit Semiconductor
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -30V; -1.1A; Idm: -4.4A; 1.25W
Mounting: SMD
Application: automotive industry
Drain current: -1.1A
Power dissipation: 1.25W
Polarisation: unipolar
Drain-source voltage: -30V
Kind of package: reel; tape
Case: SOT23
Gate charge: 1.6nC
Kind of channel: enhanced
Gate-source voltage: ±8V
Pulsed drain current: -4.4A
On-state resistance: 0.97Ω
Type of transistor: P-MOSFET
Anzahl je Verpackung: 5 Stücke
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -30V; -1.1A; Idm: -4.4A; 1.25W
Mounting: SMD
Application: automotive industry
Drain current: -1.1A
Power dissipation: 1.25W
Polarisation: unipolar
Drain-source voltage: -30V
Kind of package: reel; tape
Case: SOT23
Gate charge: 1.6nC
Kind of channel: enhanced
Gate-source voltage: ±8V
Pulsed drain current: -4.4A
On-state resistance: 0.97Ω
Type of transistor: P-MOSFET
Anzahl je Verpackung: 5 Stücke
auf Bestellung 3000 Stücke:
Lieferzeit 7-14 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
365+ | 0.2 EUR |
585+ | 0.12 EUR |
650+ | 0.11 EUR |
795+ | 0.09 EUR |
835+ | 0.086 EUR |
9000+ | 0.082 EUR |
PJA3433-AU_R1_000A1 |
Hersteller: Panjit International Inc.
Description: SOT-23, MOSFET
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 1.1A (Ta)
Rds On (Max) @ Id, Vgs: 370mOhm @ 1.1A, 4.5V
Power Dissipation (Max): 1.25W (Ta)
Vgs(th) (Max) @ Id: 1.3V @ 250µA
Supplier Device Package: SOT-23
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
Vgs (Max): ±8V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 1.6 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 125 pF @ 15 V
Grade: Automotive
Qualification: AEC-Q101
Description: SOT-23, MOSFET
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 1.1A (Ta)
Rds On (Max) @ Id, Vgs: 370mOhm @ 1.1A, 4.5V
Power Dissipation (Max): 1.25W (Ta)
Vgs(th) (Max) @ Id: 1.3V @ 250µA
Supplier Device Package: SOT-23
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
Vgs (Max): ±8V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 1.6 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 125 pF @ 15 V
Grade: Automotive
Qualification: AEC-Q101
auf Bestellung 33000 Stücke:
Lieferzeit 21-28 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
3000+ | 0.13 EUR |
6000+ | 0.12 EUR |
9000+ | 0.099 EUR |
30000+ | 0.097 EUR |
PJA3433-AU_R1_000A1 |
Hersteller: Panjit International Inc.
Description: SOT-23, MOSFET
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 1.1A (Ta)
Rds On (Max) @ Id, Vgs: 370mOhm @ 1.1A, 4.5V
Power Dissipation (Max): 1.25W (Ta)
Vgs(th) (Max) @ Id: 1.3V @ 250µA
Supplier Device Package: SOT-23
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
Vgs (Max): ±8V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 1.6 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 125 pF @ 15 V
Grade: Automotive
Qualification: AEC-Q101
Description: SOT-23, MOSFET
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 1.1A (Ta)
Rds On (Max) @ Id, Vgs: 370mOhm @ 1.1A, 4.5V
Power Dissipation (Max): 1.25W (Ta)
Vgs(th) (Max) @ Id: 1.3V @ 250µA
Supplier Device Package: SOT-23
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
Vgs (Max): ±8V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 1.6 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 125 pF @ 15 V
Grade: Automotive
Qualification: AEC-Q101
auf Bestellung 38503 Stücke:
Lieferzeit 21-28 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
34+ | 0.78 EUR |
50+ | 0.53 EUR |
102+ | 0.26 EUR |
500+ | 0.21 EUR |
1000+ | 0.15 EUR |
PJA3433_R1_00001 |
Hersteller: PanJit Semiconductor
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -30V; -1.1A; Idm: -4.4A; 1.25W
Mounting: SMD
Drain current: -1.1A
Power dissipation: 1.25W
Polarisation: unipolar
Drain-source voltage: -30V
Kind of package: reel; tape
Case: SOT23
Gate charge: 1.6nC
Kind of channel: enhanced
Gate-source voltage: ±8V
Pulsed drain current: -4.4A
On-state resistance: 0.97Ω
Type of transistor: P-MOSFET
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -30V; -1.1A; Idm: -4.4A; 1.25W
Mounting: SMD
Drain current: -1.1A
Power dissipation: 1.25W
Polarisation: unipolar
Drain-source voltage: -30V
Kind of package: reel; tape
Case: SOT23
Gate charge: 1.6nC
Kind of channel: enhanced
Gate-source voltage: ±8V
Pulsed drain current: -4.4A
On-state resistance: 0.97Ω
Type of transistor: P-MOSFET
auf Bestellung 5985 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
179+ | 0.4 EUR |
264+ | 0.27 EUR |
303+ | 0.24 EUR |
620+ | 0.12 EUR |
918+ | 0.078 EUR |
971+ | 0.074 EUR |
3000+ | 0.071 EUR |
PJA3433_R1_00001 |
Hersteller: Panjit International Inc.
Description: SOT-23, MOSFET
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 1.1A (Ta)
Rds On (Max) @ Id, Vgs: 370mOhm @ 1.1A, 4.5V
Power Dissipation (Max): 1.25W (Ta)
Vgs(th) (Max) @ Id: 1.3V @ 250µA
Supplier Device Package: SOT-23
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
Vgs (Max): ±8V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 1.6 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 125 pF @ 15 V
Description: SOT-23, MOSFET
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 1.1A (Ta)
Rds On (Max) @ Id, Vgs: 370mOhm @ 1.1A, 4.5V
Power Dissipation (Max): 1.25W (Ta)
Vgs(th) (Max) @ Id: 1.3V @ 250µA
Supplier Device Package: SOT-23
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
Vgs (Max): ±8V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 1.6 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 125 pF @ 15 V
auf Bestellung 21929 Stücke:
Lieferzeit 21-28 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
34+ | 0.78 EUR |
48+ | 0.55 EUR |
100+ | 0.27 EUR |
500+ | 0.22 EUR |
1000+ | 0.16 EUR |
PJA3433_R1_00001 |
Hersteller: Panjit International Inc.
Description: SOT-23, MOSFET
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 1.1A (Ta)
Rds On (Max) @ Id, Vgs: 370mOhm @ 1.1A, 4.5V
Power Dissipation (Max): 1.25W (Ta)
Vgs(th) (Max) @ Id: 1.3V @ 250µA
Supplier Device Package: SOT-23
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
Vgs (Max): ±8V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 1.6 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 125 pF @ 15 V
Description: SOT-23, MOSFET
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 1.1A (Ta)
Rds On (Max) @ Id, Vgs: 370mOhm @ 1.1A, 4.5V
Power Dissipation (Max): 1.25W (Ta)
Vgs(th) (Max) @ Id: 1.3V @ 250µA
Supplier Device Package: SOT-23
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
Vgs (Max): ±8V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 1.6 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 125 pF @ 15 V
auf Bestellung 15000 Stücke:
Lieferzeit 21-28 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
3000+ | 0.14 EUR |
6000+ | 0.13 EUR |
9000+ | 0.1 EUR |
PJA3434_R1_00001 |
Hersteller: PanJit Semiconductor
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 20V; 750mA; Idm: 1.5A; 500mW; SOT23
Mounting: SMD
Drain current: 0.75A
Power dissipation: 0.5W
Polarisation: unipolar
Drain-source voltage: 20V
Kind of package: reel; tape
Case: SOT23
Gate charge: 1.4nC
Kind of channel: enhanced
Gate-source voltage: ±10V
Pulsed drain current: 1.5A
On-state resistance: 3Ω
Type of transistor: N-MOSFET
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 20V; 750mA; Idm: 1.5A; 500mW; SOT23
Mounting: SMD
Drain current: 0.75A
Power dissipation: 0.5W
Polarisation: unipolar
Drain-source voltage: 20V
Kind of package: reel; tape
Case: SOT23
Gate charge: 1.4nC
Kind of channel: enhanced
Gate-source voltage: ±10V
Pulsed drain current: 1.5A
On-state resistance: 3Ω
Type of transistor: N-MOSFET
auf Bestellung 2670 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
715+ | 0.1 EUR |
910+ | 0.079 EUR |
1025+ | 0.07 EUR |
1105+ | 0.065 EUR |
1170+ | 0.061 EUR |
PJA3434_R1_00001 |
Hersteller: PanJit Semiconductor
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 20V; 750mA; Idm: 1.5A; 500mW; SOT23
Mounting: SMD
Drain current: 0.75A
Power dissipation: 0.5W
Polarisation: unipolar
Drain-source voltage: 20V
Kind of package: reel; tape
Case: SOT23
Gate charge: 1.4nC
Kind of channel: enhanced
Gate-source voltage: ±10V
Pulsed drain current: 1.5A
On-state resistance: 3Ω
Type of transistor: N-MOSFET
Anzahl je Verpackung: 5 Stücke
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 20V; 750mA; Idm: 1.5A; 500mW; SOT23
Mounting: SMD
Drain current: 0.75A
Power dissipation: 0.5W
Polarisation: unipolar
Drain-source voltage: 20V
Kind of package: reel; tape
Case: SOT23
Gate charge: 1.4nC
Kind of channel: enhanced
Gate-source voltage: ±10V
Pulsed drain current: 1.5A
On-state resistance: 3Ω
Type of transistor: N-MOSFET
Anzahl je Verpackung: 5 Stücke
auf Bestellung 2670 Stücke:
Lieferzeit 7-14 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
715+ | 0.1 EUR |
910+ | 0.079 EUR |
1025+ | 0.07 EUR |
1105+ | 0.065 EUR |
1170+ | 0.061 EUR |
3000+ | 0.059 EUR |
PJA3434_R1_00001 |
Hersteller: Panjit International Inc.
Description: SOT-23, MOSFET
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 750mA (Ta)
Rds On (Max) @ Id, Vgs: 400mOhm @ 600mA, 4.5V
Power Dissipation (Max): 500mW (Ta)
Vgs(th) (Max) @ Id: 1V @ 250µA
Supplier Device Package: SOT-23
Drive Voltage (Max Rds On, Min Rds On): 1.2V, 4.5V
Vgs (Max): ±10V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 1.4 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 67 pF @ 10 V
Description: SOT-23, MOSFET
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 750mA (Ta)
Rds On (Max) @ Id, Vgs: 400mOhm @ 600mA, 4.5V
Power Dissipation (Max): 500mW (Ta)
Vgs(th) (Max) @ Id: 1V @ 250µA
Supplier Device Package: SOT-23
Drive Voltage (Max Rds On, Min Rds On): 1.2V, 4.5V
Vgs (Max): ±10V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 1.4 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 67 pF @ 10 V
auf Bestellung 3956 Stücke:
Lieferzeit 21-28 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
31+ | 0.86 EUR |
45+ | 0.59 EUR |
100+ | 0.29 EUR |
500+ | 0.24 EUR |
1000+ | 0.17 EUR |
PJA3435_R1_00001 |
Hersteller: PanJit Semiconductor
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -20V; -500mA; Idm: -1A; 500mW; SOT23
Mounting: SMD
Drain current: -500mA
Power dissipation: 0.5W
Polarisation: unipolar
Drain-source voltage: -20V
Kind of package: reel; tape
Case: SOT23
Gate charge: 1.4nC
Kind of channel: enhanced
Gate-source voltage: ±10V
Pulsed drain current: -1A
On-state resistance: 6Ω
Type of transistor: P-MOSFET
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -20V; -500mA; Idm: -1A; 500mW; SOT23
Mounting: SMD
Drain current: -500mA
Power dissipation: 0.5W
Polarisation: unipolar
Drain-source voltage: -20V
Kind of package: reel; tape
Case: SOT23
Gate charge: 1.4nC
Kind of channel: enhanced
Gate-source voltage: ±10V
Pulsed drain current: -1A
On-state resistance: 6Ω
Type of transistor: P-MOSFET
auf Bestellung 2980 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
715+ | 0.1 EUR |
830+ | 0.087 EUR |
1005+ | 0.071 EUR |
1060+ | 0.067 EUR |
PJA3435_R1_00001 |
Hersteller: PanJit Semiconductor
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -20V; -500mA; Idm: -1A; 500mW; SOT23
Mounting: SMD
Drain current: -500mA
Power dissipation: 0.5W
Polarisation: unipolar
Drain-source voltage: -20V
Kind of package: reel; tape
Case: SOT23
Gate charge: 1.4nC
Kind of channel: enhanced
Gate-source voltage: ±10V
Pulsed drain current: -1A
On-state resistance: 6Ω
Type of transistor: P-MOSFET
Anzahl je Verpackung: 5 Stücke
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -20V; -500mA; Idm: -1A; 500mW; SOT23
Mounting: SMD
Drain current: -500mA
Power dissipation: 0.5W
Polarisation: unipolar
Drain-source voltage: -20V
Kind of package: reel; tape
Case: SOT23
Gate charge: 1.4nC
Kind of channel: enhanced
Gate-source voltage: ±10V
Pulsed drain current: -1A
On-state resistance: 6Ω
Type of transistor: P-MOSFET
Anzahl je Verpackung: 5 Stücke
auf Bestellung 2980 Stücke:
Lieferzeit 7-14 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
715+ | 0.1 EUR |
830+ | 0.087 EUR |
1005+ | 0.071 EUR |
1060+ | 0.067 EUR |
3000+ | 0.065 EUR |
PJA3435_R1_00001 |
Hersteller: Panjit International Inc.
Description: 30V P-CHANNEL ENHANCEMENT MODE M
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 500mA (Ta)
Rds On (Max) @ Id, Vgs: 1.2Ohm @ 500mA, 4.5V
Power Dissipation (Max): 500mW (Ta)
Vgs(th) (Max) @ Id: 1V @ 250µA
Supplier Device Package: SOT-23
Drive Voltage (Max Rds On, Min Rds On): 1.2V, 4.5V
Vgs (Max): ±10V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 1.4 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 38 pF @ 10 V
Description: 30V P-CHANNEL ENHANCEMENT MODE M
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 500mA (Ta)
Rds On (Max) @ Id, Vgs: 1.2Ohm @ 500mA, 4.5V
Power Dissipation (Max): 500mW (Ta)
Vgs(th) (Max) @ Id: 1V @ 250µA
Supplier Device Package: SOT-23
Drive Voltage (Max Rds On, Min Rds On): 1.2V, 4.5V
Vgs (Max): ±10V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 1.4 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 38 pF @ 10 V
auf Bestellung 2313 Stücke:
Lieferzeit 21-28 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
27+ | 0.99 EUR |
38+ | 0.69 EUR |
100+ | 0.35 EUR |
500+ | 0.28 EUR |
1000+ | 0.21 EUR |
PJA3436-AU_R1_000A1 |
Hersteller: PanJit Semiconductor
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 20V; 1.2A; Idm: 4.8A; 1.25W; SOT23
Mounting: SMD
Application: automotive industry
Drain current: 1.2A
Power dissipation: 1.25W
Polarisation: unipolar
Drain-source voltage: 20V
Kind of package: reel; tape
Case: SOT23
Gate charge: 0.9nC
Kind of channel: enhanced
Gate-source voltage: ±12V
Pulsed drain current: 4.8A
On-state resistance: 0.9Ω
Type of transistor: N-MOSFET
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 20V; 1.2A; Idm: 4.8A; 1.25W; SOT23
Mounting: SMD
Application: automotive industry
Drain current: 1.2A
Power dissipation: 1.25W
Polarisation: unipolar
Drain-source voltage: 20V
Kind of package: reel; tape
Case: SOT23
Gate charge: 0.9nC
Kind of channel: enhanced
Gate-source voltage: ±12V
Pulsed drain current: 4.8A
On-state resistance: 0.9Ω
Type of transistor: N-MOSFET
auf Bestellung 3000 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
715+ | 0.1 EUR |
910+ | 0.079 EUR |
1025+ | 0.07 EUR |
1105+ | 0.065 EUR |
1170+ | 0.061 EUR |
3000+ | 0.059 EUR |
PJA3436-AU_R1_000A1 |
Hersteller: PanJit Semiconductor
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 20V; 1.2A; Idm: 4.8A; 1.25W; SOT23
Mounting: SMD
Application: automotive industry
Drain current: 1.2A
Power dissipation: 1.25W
Polarisation: unipolar
Drain-source voltage: 20V
Kind of package: reel; tape
Case: SOT23
Gate charge: 0.9nC
Kind of channel: enhanced
Gate-source voltage: ±12V
Pulsed drain current: 4.8A
On-state resistance: 0.9Ω
Type of transistor: N-MOSFET
Anzahl je Verpackung: 5 Stücke
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 20V; 1.2A; Idm: 4.8A; 1.25W; SOT23
Mounting: SMD
Application: automotive industry
Drain current: 1.2A
Power dissipation: 1.25W
Polarisation: unipolar
Drain-source voltage: 20V
Kind of package: reel; tape
Case: SOT23
Gate charge: 0.9nC
Kind of channel: enhanced
Gate-source voltage: ±12V
Pulsed drain current: 4.8A
On-state resistance: 0.9Ω
Type of transistor: N-MOSFET
Anzahl je Verpackung: 5 Stücke
auf Bestellung 3000 Stücke:
Lieferzeit 7-14 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
715+ | 0.1 EUR |
910+ | 0.079 EUR |
1025+ | 0.07 EUR |
1105+ | 0.065 EUR |
1170+ | 0.061 EUR |
3000+ | 0.059 EUR |
PJA3436-AU_R1_000A1 |
Hersteller: Panjit International Inc.
Description: SOT-23, MOSFET
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 1.2A (Ta)
Rds On (Max) @ Id, Vgs: 380mOhm @ 1.2A, 4.5V
Power Dissipation (Max): 1.25W (Ta)
Vgs(th) (Max) @ Id: 1V @ 250µA
Supplier Device Package: SOT-23
Grade: Automotive
Part Status: Not For New Designs
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
Vgs (Max): ±12V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 0.9 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 39 pF @ 10 V
Qualification: AEC-Q101
Description: SOT-23, MOSFET
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 1.2A (Ta)
Rds On (Max) @ Id, Vgs: 380mOhm @ 1.2A, 4.5V
Power Dissipation (Max): 1.25W (Ta)
Vgs(th) (Max) @ Id: 1V @ 250µA
Supplier Device Package: SOT-23
Grade: Automotive
Part Status: Not For New Designs
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
Vgs (Max): ±12V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 0.9 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 39 pF @ 10 V
Qualification: AEC-Q101
auf Bestellung 4449 Stücke:
Lieferzeit 21-28 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
34+ | 0.78 EUR |
50+ | 0.53 EUR |
102+ | 0.26 EUR |
500+ | 0.21 EUR |
1000+ | 0.15 EUR |
PJA3436_R1_00001 |
Hersteller: Panjit International Inc.
Description: SOT-23, MOSFET
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 1.2A (Ta)
Rds On (Max) @ Id, Vgs: 380mOhm @ 1.2A, 4.5V
Power Dissipation (Max): 1.25W (Ta)
Vgs(th) (Max) @ Id: 1V @ 250µA
Supplier Device Package: SOT-23
Part Status: Not For New Designs
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
Vgs (Max): ±12V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 0.9 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 39 pF @ 10 V
Description: SOT-23, MOSFET
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 1.2A (Ta)
Rds On (Max) @ Id, Vgs: 380mOhm @ 1.2A, 4.5V
Power Dissipation (Max): 1.25W (Ta)
Vgs(th) (Max) @ Id: 1V @ 250µA
Supplier Device Package: SOT-23
Part Status: Not For New Designs
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
Vgs (Max): ±12V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 0.9 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 39 pF @ 10 V
auf Bestellung 28911 Stücke:
Lieferzeit 21-28 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
30+ | 0.88 EUR |
42+ | 0.62 EUR |
100+ | 0.32 EUR |
500+ | 0.26 EUR |
1000+ | 0.19 EUR |
PJA3436_R1_00001 |
Hersteller: Panjit International Inc.
Description: SOT-23, MOSFET
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 1.2A (Ta)
Rds On (Max) @ Id, Vgs: 380mOhm @ 1.2A, 4.5V
Power Dissipation (Max): 1.25W (Ta)
Vgs(th) (Max) @ Id: 1V @ 250µA
Supplier Device Package: SOT-23
Part Status: Not For New Designs
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
Vgs (Max): ±12V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 0.9 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 39 pF @ 10 V
Description: SOT-23, MOSFET
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 1.2A (Ta)
Rds On (Max) @ Id, Vgs: 380mOhm @ 1.2A, 4.5V
Power Dissipation (Max): 1.25W (Ta)
Vgs(th) (Max) @ Id: 1V @ 250µA
Supplier Device Package: SOT-23
Part Status: Not For New Designs
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
Vgs (Max): ±12V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 0.9 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 39 pF @ 10 V
auf Bestellung 27000 Stücke:
Lieferzeit 21-28 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
3000+ | 0.16 EUR |
6000+ | 0.15 EUR |
9000+ | 0.13 EUR |
PJA3438-AU_R1_000A1 |
Hersteller: PanJit Semiconductor
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 50V; 500mA; Idm: 1.2A; 500mW; SOT23
Mounting: SMD
Application: automotive industry
Drain current: 0.5A
Power dissipation: 0.5W
Polarisation: unipolar
Drain-source voltage: 50V
Kind of package: reel; tape
Case: SOT23
Gate charge: 0.95nC
Kind of channel: enhanced
Gate-source voltage: ±20V
Pulsed drain current: 1.2A
On-state resistance: 6Ω
Type of transistor: N-MOSFET
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 50V; 500mA; Idm: 1.2A; 500mW; SOT23
Mounting: SMD
Application: automotive industry
Drain current: 0.5A
Power dissipation: 0.5W
Polarisation: unipolar
Drain-source voltage: 50V
Kind of package: reel; tape
Case: SOT23
Gate charge: 0.95nC
Kind of channel: enhanced
Gate-source voltage: ±20V
Pulsed drain current: 1.2A
On-state resistance: 6Ω
Type of transistor: N-MOSFET
auf Bestellung 3000 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
715+ | 0.1 EUR |
835+ | 0.086 EUR |
1015+ | 0.071 EUR |
1070+ | 0.067 EUR |
3000+ | 0.064 EUR |
PJA3438-AU_R1_000A1 |
Hersteller: PanJit Semiconductor
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 50V; 500mA; Idm: 1.2A; 500mW; SOT23
Mounting: SMD
Application: automotive industry
Drain current: 0.5A
Power dissipation: 0.5W
Polarisation: unipolar
Drain-source voltage: 50V
Kind of package: reel; tape
Case: SOT23
Gate charge: 0.95nC
Kind of channel: enhanced
Gate-source voltage: ±20V
Pulsed drain current: 1.2A
On-state resistance: 6Ω
Type of transistor: N-MOSFET
Anzahl je Verpackung: 5 Stücke
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 50V; 500mA; Idm: 1.2A; 500mW; SOT23
Mounting: SMD
Application: automotive industry
Drain current: 0.5A
Power dissipation: 0.5W
Polarisation: unipolar
Drain-source voltage: 50V
Kind of package: reel; tape
Case: SOT23
Gate charge: 0.95nC
Kind of channel: enhanced
Gate-source voltage: ±20V
Pulsed drain current: 1.2A
On-state resistance: 6Ω
Type of transistor: N-MOSFET
Anzahl je Verpackung: 5 Stücke
auf Bestellung 3000 Stücke:
Lieferzeit 7-14 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
715+ | 0.1 EUR |
835+ | 0.086 EUR |
1015+ | 0.071 EUR |
1070+ | 0.067 EUR |
3000+ | 0.064 EUR |
PJA3438-AU_R1_000A1 |
Hersteller: Panjit International Inc.
Description: SOT-23, MOSFET
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 500mA (Ta)
Rds On (Max) @ Id, Vgs: 1.45Ohm @ 500mA, 10V
Power Dissipation (Max): 500mW (Ta)
Vgs(th) (Max) @ Id: 1V @ 250µA
Supplier Device Package: SOT-23
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 50 V
Gate Charge (Qg) (Max) @ Vgs: 0.95 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 36 pF @ 25 V
Grade: Automotive
Qualification: AEC-Q101
Description: SOT-23, MOSFET
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 500mA (Ta)
Rds On (Max) @ Id, Vgs: 1.45Ohm @ 500mA, 10V
Power Dissipation (Max): 500mW (Ta)
Vgs(th) (Max) @ Id: 1V @ 250µA
Supplier Device Package: SOT-23
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 50 V
Gate Charge (Qg) (Max) @ Vgs: 0.95 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 36 pF @ 25 V
Grade: Automotive
Qualification: AEC-Q101
auf Bestellung 3000 Stücke:
Lieferzeit 21-28 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
3000+ | 0.2 EUR |
PJA3438-AU_R1_000A1 |
Hersteller: Panjit International Inc.
Description: SOT-23, MOSFET
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 500mA (Ta)
Rds On (Max) @ Id, Vgs: 1.45Ohm @ 500mA, 10V
Power Dissipation (Max): 500mW (Ta)
Vgs(th) (Max) @ Id: 1V @ 250µA
Supplier Device Package: SOT-23
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 50 V
Gate Charge (Qg) (Max) @ Vgs: 0.95 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 36 pF @ 25 V
Grade: Automotive
Qualification: AEC-Q101
Description: SOT-23, MOSFET
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 500mA (Ta)
Rds On (Max) @ Id, Vgs: 1.45Ohm @ 500mA, 10V
Power Dissipation (Max): 500mW (Ta)
Vgs(th) (Max) @ Id: 1V @ 250µA
Supplier Device Package: SOT-23
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 50 V
Gate Charge (Qg) (Max) @ Vgs: 0.95 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 36 pF @ 25 V
Grade: Automotive
Qualification: AEC-Q101
auf Bestellung 4353 Stücke:
Lieferzeit 21-28 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
30+ | 0.88 EUR |
42+ | 0.63 EUR |
100+ | 0.32 EUR |
500+ | 0.28 EUR |
1000+ | 0.22 EUR |
PJA3438_R1_00001 |
Hersteller: Panjit International Inc.
Description: SOT-23, MOSFET
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 500mA (Ta)
Rds On (Max) @ Id, Vgs: 1.45Ohm @ 500mA, 10V
Power Dissipation (Max): 500mW (Ta)
Vgs(th) (Max) @ Id: 1V @ 250µA
Supplier Device Package: SOT-23
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 50 V
Gate Charge (Qg) (Max) @ Vgs: 0.95 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 36 pF @ 25 V
Description: SOT-23, MOSFET
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 500mA (Ta)
Rds On (Max) @ Id, Vgs: 1.45Ohm @ 500mA, 10V
Power Dissipation (Max): 500mW (Ta)
Vgs(th) (Max) @ Id: 1V @ 250µA
Supplier Device Package: SOT-23
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 50 V
Gate Charge (Qg) (Max) @ Vgs: 0.95 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 36 pF @ 25 V
auf Bestellung 12000 Stücke:
Lieferzeit 21-28 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
3000+ | 0.19 EUR |
9000+ | 0.16 EUR |
PJA3438_R1_00001 |
Hersteller: Panjit International Inc.
Description: SOT-23, MOSFET
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 500mA (Ta)
Rds On (Max) @ Id, Vgs: 1.45Ohm @ 500mA, 10V
Power Dissipation (Max): 500mW (Ta)
Vgs(th) (Max) @ Id: 1V @ 250µA
Supplier Device Package: SOT-23
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 50 V
Gate Charge (Qg) (Max) @ Vgs: 0.95 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 36 pF @ 25 V
Description: SOT-23, MOSFET
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 500mA (Ta)
Rds On (Max) @ Id, Vgs: 1.45Ohm @ 500mA, 10V
Power Dissipation (Max): 500mW (Ta)
Vgs(th) (Max) @ Id: 1V @ 250µA
Supplier Device Package: SOT-23
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 50 V
Gate Charge (Qg) (Max) @ Vgs: 0.95 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 36 pF @ 25 V
auf Bestellung 17248 Stücke:
Lieferzeit 21-28 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
24+ | 1.09 EUR |
35+ | 0.76 EUR |
100+ | 0.38 EUR |
500+ | 0.31 EUR |
1000+ | 0.23 EUR |
PJA3439-AU_R1_000A1 |
Hersteller: PanJit Semiconductor
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -60V; -300mA; Idm: -1A; 500mW; SOT23
Mounting: SMD
Application: automotive industry
Drain current: -0.3A
Power dissipation: 0.5W
Polarisation: unipolar
Drain-source voltage: -60V
Kind of package: reel; tape
Case: SOT23
Gate charge: 1.1nC
Kind of channel: enhanced
Gate-source voltage: ±20V
Pulsed drain current: -1A
On-state resistance: 13Ω
Type of transistor: P-MOSFET
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -60V; -300mA; Idm: -1A; 500mW; SOT23
Mounting: SMD
Application: automotive industry
Drain current: -0.3A
Power dissipation: 0.5W
Polarisation: unipolar
Drain-source voltage: -60V
Kind of package: reel; tape
Case: SOT23
Gate charge: 1.1nC
Kind of channel: enhanced
Gate-source voltage: ±20V
Pulsed drain current: -1A
On-state resistance: 13Ω
Type of transistor: P-MOSFET
auf Bestellung 1910 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
715+ | 0.1 EUR |
835+ | 0.086 EUR |
1015+ | 0.071 EUR |
1070+ | 0.067 EUR |
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