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AONR62692EAlpha & Omega SemiconductorN-Channel MOSFET
Produkt ist nicht verfügbar
 Mindestbestellmenge: 5000 Stücke
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AONR62818Alpha & Omega Semiconductor Inc.Description: N
Input Capacitance (Ciss) (Max) @ Vds: 2420 pF @ 40 V
Gate Charge (Qg) (Max) @ Vgs: 48 nC @ 10 V
Drain to Source Voltage (Vdss): 80 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Supplier Device Package: 8-DFN-EP (3.3x3.3)
Vgs(th) (Max) @ Id: 2.3V @ 250µA
Power Dissipation (Max): 4.1W (Ta), 54W (Tc)
Rds On (Max) @ Id, Vgs: 6.6mOhm @ 18A, 10V
Current - Continuous Drain (Id) @ 25°C: 18A (Ta), 50A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-PowerWDFN
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar
 Mindestbestellmenge: 3000 Stücke
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AONR62818Alpha & Omega SemiconductorTrans MOSFET N-CH 80V 18A 8-Pin DFN EP T/R
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AONR62921Alpha & Omega SemiconductorTrans MOSFET N-CH 100V 50A 8-Pin DFN EP T/R
Produkt ist nicht verfügbar
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AONR62921ALPHA & OMEGA SEMICONDUCTORCategory: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 31.5A; 21.5W; DFN3.3x3.3
Mounting: SMD
Polarisation: unipolar
Case: DFN3.3x3.3
Kind of channel: enhancement
Type of transistor: N-MOSFET
Gate charge: 35nC
On-state resistance: 10.2mΩ
Gate-source voltage: ±20V
Power dissipation: 21.5W
Drain current: 31.5A
Drain-source voltage: 100V
Produkt ist nicht verfügbar
 Mindestbestellmenge: 3000 Stücke
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AONR62921Alpha & Omega Semiconductor Inc.Description: 100V N CHAN FET SMD
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerWDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 13.5A (Ta), 50A (Tc)
Rds On (Max) @ Id, Vgs: 10.2mOhm @ 13.5A, 10V
Power Dissipation (Max): 4.1W (Ta), 54W (Tc)
Vgs(th) (Max) @ Id: 2.3V @ 250µA
Supplier Device Package: 8-DFN-EP (3.3x3.3)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 35 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2450 pF @ 50 V
Produkt ist nicht verfügbar
 Mindestbestellmenge: 3000 Stücke
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AONR62992Alpha & Omega Semiconductor Inc.Description: 100V N-CHANNEL MOSFET
auf Bestellung 3000 Stücke:
Lieferzeit 10-14 Tag (e)
3000+0.98 EUR
Mindestbestellmenge: 3000 Stücke
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AONR66406Alpha & Omega Semiconductor Inc.Description: MOSFET N-CH 40V 22A/30A 8DFN
Input Capacitance (Ciss) (Max) @ Vds: 1480 pF @ 20 V
Gate Charge (Qg) (Max) @ Vgs: 30 nC @ 10 V
Drain to Source Voltage (Vdss): 40 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Supplier Device Package: 8-DFN-EP (3x3)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Power Dissipation (Max): 5W (Ta), 27W (Tc)
Rds On (Max) @ Id, Vgs: 6.1mOhm @ 20A, 10V
Current - Continuous Drain (Id) @ 25°C: 22A (Ta), 30A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-PowerVDFN
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar
 Mindestbestellmenge: 5000 Stücke
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AONR66406Alpha & Omega SemiconductorTrans MOSFET N-CH 40V 22A 8-Pin DFN EP T/R
Produkt ist nicht verfügbar
 Mindestbestellmenge: 5000 Stücke
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AONR66620Alpha & Omega Semiconductor Inc.Description: N
Packaging: Cut Tape (CT)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 17.5A (Ta), 24A (Tc)
Rds On (Max) @ Id, Vgs: 9.1mOhm @ 20A, 10V
Power Dissipation (Max): 5W (Ta), 27W (Tc)
Vgs(th) (Max) @ Id: 3.6V @ 250µA
Supplier Device Package: 8-DFN-EP (3x3)
Drive Voltage (Max Rds On, Min Rds On): 8V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 25 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1070 pF @ 30 V
auf Bestellung 5000 Stücke:
Lieferzeit 10-14 Tag (e)
13+1.63 EUR
15+1.48 EUR
25+1.39 EUR
100+1.15 EUR
250+1.07 EUR
500+0.95 EUR
1000+0.75 EUR
2500+0.7 EUR
Mindestbestellmenge: 13 Stücke
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AONR66620Alpha & Omega Semiconductor Inc.Description: N
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 17.5A (Ta), 24A (Tc)
Rds On (Max) @ Id, Vgs: 9.1mOhm @ 20A, 10V
Power Dissipation (Max): 5W (Ta), 27W (Tc)
Vgs(th) (Max) @ Id: 3.6V @ 250µA
Supplier Device Package: 8-DFN-EP (3x3)
Drive Voltage (Max Rds On, Min Rds On): 8V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 25 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1070 pF @ 30 V
auf Bestellung 5000 Stücke:
Lieferzeit 10-14 Tag (e)
5000+0.67 EUR
Mindestbestellmenge: 5000 Stücke
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AONR66820Alpha & Omega SemiconductorMedium Voltage MOSFETs (40V - 400V)
Produkt ist nicht verfügbar
 Mindestbestellmenge: 3000 Stücke
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AONR66820Alpha & Omega Semiconductor Inc.Description: N
Input Capacitance (Ciss) (Max) @ Vds: 1950 pF @ 40 V
Gate Charge (Qg) (Max) @ Vgs: 50 nC @ 10 V
Drain to Source Voltage (Vdss): 80 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 8V, 10V
Supplier Device Package: 8-DFN-EP (3.3x3.3)
Vgs(th) (Max) @ Id: 4.1V @ 250µA
Power Dissipation (Max): 4.1W (Ta), 104W (Tc)
Rds On (Max) @ Id, Vgs: 8.8mOhm @ 17A, 8V
Current - Continuous Drain (Id) @ 25°C: 17A (Ta), 50A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-PowerWDFN
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar
 Mindestbestellmenge: 3000 Stücke
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AONR66821Alpha & Omega SemiconductorMedium Voltage MOSFETs (40V - 400V)
Produkt ist nicht verfügbar
 Mindestbestellmenge: 3000 Stücke
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AONR66922Alpha & Omega Semiconductor Inc.Description: MOSFET N-CH 100V 15A/50A 8DFN
Packaging: Cut Tape (CT)
Package / Case: 8-PowerWDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 15A (Ta), 50A (Tc)
Rds On (Max) @ Id, Vgs: 9mOhm @ 15A, 10V
Power Dissipation (Max): 4.1W (Ta), 52W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: 8-DFN-EP (3.3x3.3)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 46 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2180 pF @ 50 V
auf Bestellung 12957 Stücke:
Lieferzeit 10-14 Tag (e)
6+4.06 EUR
10+2.59 EUR
100+1.76 EUR
500+1.39 EUR
1000+1.29 EUR
Mindestbestellmenge: 6 Stücke
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AONR66922Alpha & Omega SemiconductorTrans MOSFET N-CH 100V 15A 8-Pin DFN EP T/R
auf Bestellung 3000 Stücke:
Lieferzeit 14-21 Tag (e)
3000+0.94 EUR
Mindestbestellmenge: 3000 Stücke
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AONR66922AOS100V N-CHANNEL ALPHASGT T Транзистори
Produkt ist nicht verfügbar
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AONR66922ALPHA & OMEGA SEMICONDUCTORCategory: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 34A; 20.5W; DFN3.3x3.3
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 34A
Power dissipation: 20.5W
Case: DFN3.3x3.3
Gate-source voltage: ±20V
On-state resistance: 9mΩ
Mounting: SMD
Gate charge: 32.5nC
Kind of channel: enhancement
Produkt ist nicht verfügbar
 Mindestbestellmenge: 3000 Stücke
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AONR66922Alpha & Omega Semiconductor Inc.Description: MOSFET N-CH 100V 15A/50A 8DFN
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerWDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 15A (Ta), 50A (Tc)
Rds On (Max) @ Id, Vgs: 9mOhm @ 15A, 10V
Power Dissipation (Max): 4.1W (Ta), 52W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: 8-DFN-EP (3.3x3.3)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 46 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2180 pF @ 50 V
auf Bestellung 12000 Stücke:
Lieferzeit 10-14 Tag (e)
3000+1.14 EUR
6000+1.06 EUR
9000+1.02 EUR
Mindestbestellmenge: 3000 Stücke
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AONR66922Alpha & Omega SemiconductorTrans MOSFET N-CH 100V 15A 8-Pin DFN EP T/R
Produkt ist nicht verfügbar
 Mindestbestellmenge: 3000 Stücke
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AONR66922Alpha & Omega SemiconductorTrans MOSFET N-CH 100V 15A 8-Pin DFN EP T/R
auf Bestellung 3000 Stücke:
Lieferzeit 14-21 Tag (e)
3000+0.94 EUR
Mindestbestellmenge: 3000 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
AONR66924Alpha & Omega Semiconductor Inc.Description: N
Input Capacitance (Ciss) (Max) @ Vds: 1450 pF @ 50 V
Gate Charge (Qg) (Max) @ Vgs: 40 nC @ 10 V
Drain to Source Voltage (Vdss): 100 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Supplier Device Package: 8-DFN-EP (3x3)
Vgs(th) (Max) @ Id: 2.6V @ 250µA
Power Dissipation (Max): 5W (Ta), 30W (Tc)
Rds On (Max) @ Id, Vgs: 13.5mOhm @ 20A, 10V
Current - Continuous Drain (Id) @ 25°C: 13A (Ta), 32A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-PowerVDFN
Packaging: Cut Tape (CT)
auf Bestellung 4635 Stücke:
Lieferzeit 10-14 Tag (e)
9+2.43 EUR
14+1.52 EUR
25+1.29 EUR
100+1.01 EUR
250+0.88 EUR
500+0.8 EUR
1000+0.73 EUR
2500+0.65 EUR
Mindestbestellmenge: 9 Stücke
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AONR66924Alpha & Omega SemiconductorMedium Voltage MOSFETs (40V - 400V)
Produkt ist nicht verfügbar
 Mindestbestellmenge: 5000 Stücke
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AONR66924Alpha & Omega Semiconductor Inc.Description: N
Input Capacitance (Ciss) (Max) @ Vds: 1450 pF @ 50 V
Gate Charge (Qg) (Max) @ Vgs: 40 nC @ 10 V
Drain to Source Voltage (Vdss): 100 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Supplier Device Package: 8-DFN-EP (3x3)
Vgs(th) (Max) @ Id: 2.6V @ 250µA
Power Dissipation (Max): 5W (Ta), 30W (Tc)
Rds On (Max) @ Id, Vgs: 13.5mOhm @ 20A, 10V
Current - Continuous Drain (Id) @ 25°C: 13A (Ta), 32A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-PowerVDFN
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar
 Mindestbestellmenge: 5000 Stücke
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AONSTelemecaniqueRacks & Rack Cabinet Accessories LEVER ARM
Produkt ist nicht verfügbar
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AONS1R1A70Alpha & Omega Semiconductor Inc.Description: LINEAR IC
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 1.3A (Ta), 6.6A (Tc)
Rds On (Max) @ Id, Vgs: 1.1Ohm @ 1A, 10V
Power Dissipation (Max): 4.2W (Ta), 104W (Tc)
Vgs(th) (Max) @ Id: 4.1V @ 250µA
Supplier Device Package: 8-DFN-EP (5x6)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 700 V
Gate Charge (Qg) (Max) @ Vgs: 9.4 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 461 pF @ 100 V
Produkt ist nicht verfügbar
 Mindestbestellmenge: 3000 Stücke
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AONS1R6A70Alpha & Omega Semiconductor Inc.Description: MOSFET N-CH 700V 1.1A/4.6A 8DFN
Input Capacitance (Ciss) (Max) @ Vds: 354 pF @ 100 V
Gate Charge (Qg) (Max) @ Vgs: 8 nC @ 10 V
Drain to Source Voltage (Vdss): 700 V
Vgs (Max): ±30V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Active
Supplier Device Package: 8-DFN-EP (5x6)
Vgs(th) (Max) @ Id: 3.5V @ 250µA
Power Dissipation (Max): 4.1W (Ta), 78W (Tc)
Rds On (Max) @ Id, Vgs: 1.6Ohm @ 1A, 10V
Current - Continuous Drain (Id) @ 25°C: 1.1A (Ta), 4.6A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-PowerVDFN
Packaging: Cut Tape (CT)
auf Bestellung 2507 Stücke:
Lieferzeit 10-14 Tag (e)
6+3.8 EUR
10+2.42 EUR
100+1.63 EUR
500+1.29 EUR
1000+1.18 EUR
Mindestbestellmenge: 6 Stücke
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AONS1R6A70Alpha & Omega Semiconductor Inc.Description: MOSFET N-CH 700V 1.1A/4.6A 8DFN
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 1.1A (Ta), 4.6A (Tc)
Rds On (Max) @ Id, Vgs: 1.6Ohm @ 1A, 10V
Power Dissipation (Max): 4.1W (Ta), 78W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 250µA
Supplier Device Package: 8-DFN-EP (5x6)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 700 V
Gate Charge (Qg) (Max) @ Vgs: 8 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 354 pF @ 100 V
Produkt ist nicht verfügbar
 Mindestbestellmenge: 3000 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
AONS1R6A70ALPHA&OMEGA700V, A MOS TM N-CHANNEL POWER T AONS1R6A70 TAONS1R6A70
Anzahl je Verpackung: 2 Stücke
auf Bestellung 5 Stücke:
Lieferzeit 7-14 Tag (e)
6+7.58 EUR
Mindestbestellmenge: 5 Stücke
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AONS20485Alpha & Omega Semiconductor Inc.Description: LINEAR IC
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerSMD, Flat Leads
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 13A (Ta), 40A (Tc)
Rds On (Max) @ Id, Vgs: 15mOhm @ 20A, 10V
Power Dissipation (Max): 5W (Ta), 73W (Tc)
Vgs(th) (Max) @ Id: 2.3V @ 250µA
Supplier Device Package: 8-DFN (5x6)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 60 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2430 pF @ 20 V
Produkt ist nicht verfügbar
 Mindestbestellmenge: 3000 Stücke
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AONS21113Alpha & Omega Semiconductor Inc.Description: P
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerSMD, Flat Leads
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 44A (Ta), 70A (Tc)
Rds On (Max) @ Id, Vgs: 2.2mOhm @ 20A, 10V
Power Dissipation (Max): 6.2W (Ta), 138W (Tc)
Vgs(th) (Max) @ Id: 1.1V @ 250µA
Supplier Device Package: 8-DFN (5x6)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 10V
Vgs (Max): ±12V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 550 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 18700 pF @ 10 V
Produkt ist nicht verfügbar
 Mindestbestellmenge: 3000 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
AONS21303CAlpha & Omega Semiconductor Inc.Description: MOSFET P-CH 30V 180A 8DFN
Packaging: Cut Tape (CT)
Package / Case: 8-PowerSMD, Flat Leads
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 38A (Ta), 70A (Tc)
Rds On (Max) @ Id, Vgs: 2.8mOhm @ 20A, 10V
Power Dissipation (Max): 6.2W (Ta), 138W (Tc)
Vgs(th) (Max) @ Id: 2.3V @ 250µA
Supplier Device Package: 8-DFN (5x6)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 320 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 13240 pF @ 15 V
auf Bestellung 723 Stücke:
Lieferzeit 10-14 Tag (e)
6+4.02 EUR
10+2.57 EUR
100+1.74 EUR
500+1.38 EUR
Mindestbestellmenge: 6 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
AONS21303CAlpha & Omega Semiconductor Inc.Description: MOSFET P-CH 30V 180A 8DFN
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerSMD, Flat Leads
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 38A (Ta), 70A (Tc)
Rds On (Max) @ Id, Vgs: 2.8mOhm @ 20A, 10V
Power Dissipation (Max): 6.2W (Ta), 138W (Tc)
Vgs(th) (Max) @ Id: 2.3V @ 250µA
Supplier Device Package: 8-DFN (5x6)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 320 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 13240 pF @ 15 V
Produkt ist nicht verfügbar
 Mindestbestellmenge: 3000 Stücke
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AONS21303CAlpha & Omega Semiconductor30V P Channel MOSFET
Produkt ist nicht verfügbar
 Mindestbestellmenge: 3000 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
AONS21307Alpha & Omega Semiconductor Inc.Description: P
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerSMD, Flat Leads
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 17A (Ta), 24A (Tc)
Rds On (Max) @ Id, Vgs: 11mOhm @ 20A, 10V
Power Dissipation (Max): 5W (Ta), 38W (Tc)
Vgs(th) (Max) @ Id: 2.3V @ 250µA
Supplier Device Package: 8-DFN (5x6)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±25V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 50 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1995 pF @ 15 V
Produkt ist nicht verfügbar
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AONS21309CAlpha & Omega Semiconductor Inc.Description: MOSFET P-CH 30V 70A 5X6 DFN
Packaging: Cut Tape (CT)
Package / Case: 8-PowerSMD, Flat Leads
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 70A (Tc)
Rds On (Max) @ Id, Vgs: 3.8mOhm @ 20A, 10V
Power Dissipation (Max): 125W (Tc)
Vgs(th) (Max) @ Id: 2.3V @ 250µA
Supplier Device Package: 8-DFN (5x6)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 200 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 7300 pF @ 15 V
auf Bestellung 3448 Stücke:
Lieferzeit 10-14 Tag (e)
7+3.28 EUR
11+2.08 EUR
100+1.39 EUR
500+1.11 EUR
1000+1.01 EUR
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AONS21309CAlpha & Omega SemiconductorP-Channel MOSFET
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AONS21309CAlpha & Omega Semiconductor Inc.Description: MOSFET P-CH 30V 70A 5X6 DFN
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerSMD, Flat Leads
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 70A (Tc)
Rds On (Max) @ Id, Vgs: 3.8mOhm @ 20A, 10V
Power Dissipation (Max): 125W (Tc)
Vgs(th) (Max) @ Id: 2.3V @ 250µA
Supplier Device Package: 8-DFN (5x6)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 200 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 7300 pF @ 15 V
auf Bestellung 3000 Stücke:
Lieferzeit 10-14 Tag (e)
3000+0.89 EUR
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AONS21321Alpha & Omega Semiconductor30V P-Channel MOSFET
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AONS21321Alpha & Omega Semiconductor Inc.Description: MOSFET P-CH 30V 14A/24A 8DFN
Packaging: Cut Tape (CT)
Package / Case: 8-PowerSMD, Flat Leads
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 14A (Ta), 24A (Tc)
Rds On (Max) @ Id, Vgs: 16.5mOhm @ 20A, 10V
Power Dissipation (Max): 5W (Ta), 24.5W (Tc)
Vgs(th) (Max) @ Id: 2.3V @ 250µA
Supplier Device Package: 8-DFN (5x6)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±25V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 34 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1180 pF @ 15 V
auf Bestellung 3584 Stücke:
Lieferzeit 10-14 Tag (e)
13+1.68 EUR
21+1.04 EUR
100+0.68 EUR
500+0.51 EUR
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AONS21321Alpha & Omega Semiconductor Inc.Description: MOSFET P-CH 30V 14A/24A 8DFN
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerSMD, Flat Leads
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 14A (Ta), 24A (Tc)
Rds On (Max) @ Id, Vgs: 16.5mOhm @ 20A, 10V
Power Dissipation (Max): 5W (Ta), 24.5W (Tc)
Vgs(th) (Max) @ Id: 2.3V @ 250µA
Supplier Device Package: 8-DFN (5x6)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±25V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 34 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1180 pF @ 15 V
auf Bestellung 3000 Stücke:
Lieferzeit 10-14 Tag (e)
3000+0.4 EUR
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AONS21357Alpha & Omega Semiconductor Inc.Description: MOSFET P-CH 30V 21A/36A 8DFN
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerSMD, Flat Leads
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 21A (Ta), 36A (Tc)
Rds On (Max) @ Id, Vgs: 7.8mOhm @ 20A, 10V
Power Dissipation (Max): 5W (Ta), 48W (Tc)
Vgs(th) (Max) @ Id: 2.3V @ 250µA
Supplier Device Package: 8-DFN (5x6)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±25V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 70 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2830 pF @ 15 V
auf Bestellung 15000 Stücke:
Lieferzeit 10-14 Tag (e)
3000+0.55 EUR
6000+0.51 EUR
9000+0.49 EUR
15000+0.46 EUR
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AONS21357ALPHA & OMEGA SEMICONDUCTORCategory: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -30V; -36A; 19W; DFN5x6
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -30V
Drain current: -36A
Power dissipation: 19W
Case: DFN5x6
Gate-source voltage: ±25V
On-state resistance: 7.8mΩ
Mounting: SMD
Kind of channel: enhancement
Gate charge: 25nC
auf Bestellung 2865 Stücke:
Lieferzeit 14-21 Tag (e)
93+0.92 EUR
151+0.57 EUR
205+0.42 EUR
500+0.35 EUR
1000+0.32 EUR
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AONS21357Alpha & Omega Semiconductor Inc.Description: MOSFET P-CH 30V 21A/36A 8DFN
Packaging: Cut Tape (CT)
Package / Case: 8-PowerSMD, Flat Leads
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 21A (Ta), 36A (Tc)
Rds On (Max) @ Id, Vgs: 7.8mOhm @ 20A, 10V
Power Dissipation (Max): 5W (Ta), 48W (Tc)
Vgs(th) (Max) @ Id: 2.3V @ 250µA
Supplier Device Package: 8-DFN (5x6)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±25V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 70 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2830 pF @ 15 V
auf Bestellung 18226 Stücke:
Lieferzeit 10-14 Tag (e)
10+2.2 EUR
16+1.38 EUR
100+0.9 EUR
500+0.7 EUR
1000+0.64 EUR
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AONS21357Alpha & Omega SemiconductorTrans MOSFET P-CH 30V 21A 8-Pin DFN EP T/R
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AONS30300Alpha & Omega Semiconductor Inc.Description: N
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerSMD, Flat Leads
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 88A (Ta), 710A (Tc)
Rds On (Max) @ Id, Vgs: 0.58mOhm @ 20A, 10V
Power Dissipation (Max): 7.5W (Ta), 483W (Tc)
Vgs(th) (Max) @ Id: 1.6V @ 250µA
Supplier Device Package: 8-DFN (5x6)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 150 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 12215 pF @ 15 V
Produkt ist nicht verfügbar
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AONS30300Alpha & Omega Semiconductor30V N-Channel MOSFET
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AONS30302Alpha & Omega Semiconductor Inc.Description: AONS30302
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerSMD, Flat Leads
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Rds On (Max) @ Id, Vgs: 0.85mOhm @ 20A, 10V
Supplier Device Package: 8-DFN (5x6)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 125 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 10460 pF @ 15 V
Produkt ist nicht verfügbar
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AONS30302Alpha & Omega Semiconductor30V N-Channel MOSFET
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AONS30306Alpha & Omega Semiconductor Inc.Description: LINEAR IC
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerSMD, Flat Leads
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Rds On (Max) @ Id, Vgs: 1.1mOhm @ 20A, 10V
Vgs(th) (Max) @ Id: 1.7V @ 250µA
Supplier Device Package: 8-DFN (5x6)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 110 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 5580 pF @ 15 V
Produkt ist nicht verfügbar
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AONS32100Alpha & Omega Semiconductor Inc.Description: MOSFET N-CH 25V 73A/400A 8DFN
Input Capacitance (Ciss) (Max) @ Vds: 15200 pF @ 12.5 V
Gate Charge (Qg) (Max) @ Vgs: 240 nC @ 10 V
Drain to Source Voltage (Vdss): 25 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Part Status: Active
Supplier Device Package: 8-DFN (5x6)
Vgs(th) (Max) @ Id: 1.6V @ 250µA
Power Dissipation (Max): 6.2W (Ta), 250W (Tc)
Rds On (Max) @ Id, Vgs: 0.73mOhm @ 20A, 10V
Current - Continuous Drain (Id) @ 25°C: 73A (Ta), 400A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-PowerSMD, Flat Leads
Packaging: Tape & Reel (TR)
auf Bestellung 6000 Stücke:
Lieferzeit 10-14 Tag (e)
3000+1.7 EUR
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AONS32100AOSN-Channel 25 V 73A (Ta), 400A (Tc) 6.2W (Ta), 250W (Tc) Surface Mount 8-DFN (5x6) Транзистори
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AONS32100ALPHA&OMEGATranzystor N-Channel MOSFET; 25V; 20V; 1,1mOhm; 400A; 400W; -55°C ~ 150°C; Podobny do: PGN04N012HP (ma 0.68mOhm zamiast 1.1mOhm); AONS32100 TAONS32100
Anzahl je Verpackung: 10 Stücke
auf Bestellung 30 Stücke:
Lieferzeit 7-14 Tag (e)
10+3.65 EUR
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AONS32100Alpha & Omega SemiconductorTrans MOSFET N-CH 25V 400A 8-Pin DFN EP
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AONS32100Alpha & Omega Semiconductor Inc.Description: MOSFET N-CH 25V 73A/400A 8DFN
Input Capacitance (Ciss) (Max) @ Vds: 15200 pF @ 12.5 V
Gate Charge (Qg) (Max) @ Vgs: 240 nC @ 10 V
Drain to Source Voltage (Vdss): 25 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Part Status: Active
Supplier Device Package: 8-DFN (5x6)
Vgs(th) (Max) @ Id: 1.6V @ 250µA
Power Dissipation (Max): 6.2W (Ta), 250W (Tc)
Rds On (Max) @ Id, Vgs: 0.73mOhm @ 20A, 10V
Current - Continuous Drain (Id) @ 25°C: 73A (Ta), 400A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-PowerSMD, Flat Leads
Packaging: Cut Tape (CT)
auf Bestellung 9038 Stücke:
Lieferzeit 10-14 Tag (e)
4+5.7 EUR
10+3.69 EUR
100+2.53 EUR
500+2.05 EUR
1000+1.89 EUR
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AONS32106Alpha & Omega Semiconductor Inc.Description: N
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerSMD, Flat Leads
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 20A (Ta), 20A (Tc)
Rds On (Max) @ Id, Vgs: 5.3mOhm @ 20A, 4.5V
Power Dissipation (Max): 5W (Ta), 36W (Tc)
Vgs(th) (Max) @ Id: 1.25V @ 250µA
Supplier Device Package: 8-DFN (5x6)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
Vgs (Max): ±12V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 45 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 3300 pF @ 10 V
Produkt ist nicht verfügbar
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AONS32302Alpha & Omega SemiconductorN-Channel MOSFET
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AONS32302Alpha & Omega Semiconductor Inc.Description: MOSFET N-CH 30V 56A/220A 8DFN
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-PowerSMD, Flat Leads
Packaging: Cut Tape (CT)
Input Capacitance (Ciss) (Max) @ Vds: 6060 pF @ 15 V
Gate Charge (Qg) (Max) @ Vgs: 150 nC @ 10 V
Drain to Source Voltage (Vdss): 30 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Part Status: Active
Supplier Device Package: 8-DFN (5x6)
Vgs(th) (Max) @ Id: 2.3V @ 250µA
Power Dissipation (Max): 119W (Tc)
Rds On (Max) @ Id, Vgs: 1.35mOhm @ 20A, 10V
Current - Continuous Drain (Id) @ 25°C: 56A (Ta), 220A (Tc)
FET Type: N-Channel
auf Bestellung 9196 Stücke:
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7+3.25 EUR
11+2.06 EUR
100+1.38 EUR
500+1.09 EUR
1000+1 EUR
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AONS32302ALPHA & OMEGA SEMICONDUCTORCategory: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 56A; 119W; DFN8
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 56A
Power dissipation: 119W
Case: DFN8
Gate-source voltage: ±20V
On-state resistance: 1.35mΩ
Mounting: SMD
Gate charge: 150nC
Kind of channel: enhancement
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AONS32302Alpha & Omega Semiconductor Inc.Description: MOSFET N-CH 30V 56A/220A 8DFN
Input Capacitance (Ciss) (Max) @ Vds: 6060 pF @ 15 V
Gate Charge (Qg) (Max) @ Vgs: 150 nC @ 10 V
Drain to Source Voltage (Vdss): 30 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Part Status: Active
Supplier Device Package: 8-DFN (5x6)
Vgs(th) (Max) @ Id: 2.3V @ 250µA
Power Dissipation (Max): 119W (Tc)
Rds On (Max) @ Id, Vgs: 1.35mOhm @ 20A, 10V
Current - Continuous Drain (Id) @ 25°C: 56A (Ta), 220A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-PowerSMD, Flat Leads
Packaging: Tape & Reel (TR)
auf Bestellung 6000 Stücke:
Lieferzeit 10-14 Tag (e)
3000+0.81 EUR
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AONS32303Alpha & Omega Semiconductor Inc.Description: N
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerSMD, Flat Leads
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 46A (Ta), 200A (Tc)
Rds On (Max) @ Id, Vgs: 1.7mOhm @ 20A, 10V
Power Dissipation (Max): 6.2W (Ta), 119W (Tc)
Vgs(th) (Max) @ Id: 2V @ 250µA
Supplier Device Package: 8-DFN (5x6)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 175 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 7900 pF @ 15 V
Produkt ist nicht verfügbar
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AONS32304Alpha & Omega Semiconductor Inc.Description: MOSFET N-CH 30V 40A/140A 8DFN
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Part Status: Active
Supplier Device Package: 8-DFN (5x6)
Vgs(th) (Max) @ Id: 2.1V @ 250µA
Power Dissipation (Max): 6.2W (Ta), 78W (Tc)
Rds On (Max) @ Id, Vgs: 2.3mOhm @ 20A, 10V
Current - Continuous Drain (Id) @ 25°C: 40A (Ta), 140A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-PowerSMD, Flat Leads
Input Capacitance (Ciss) (Max) @ Vds: 5970 pF @ 15 V
Gate Charge (Qg) (Max) @ Vgs: 130 nC @ 10 V
Drain to Source Voltage (Vdss): 30 V
Vgs (Max): ±20V
Packaging: Cut Tape (CT)
auf Bestellung 1024 Stücke:
Lieferzeit 10-14 Tag (e)
7+3 EUR
12+1.89 EUR
100+1.27 EUR
500+1 EUR
1000+0.92 EUR
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AONS32304ALPHA & OMEGA SEMICONDUCTORCategory: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 40A; 6.2W; DFN8
Mounting: SMD
Power dissipation: 6.2W
Gate charge: 130nC
Polarisation: unipolar
Drain current: 40A
Kind of channel: enhancement
Drain-source voltage: 30V
Type of transistor: N-MOSFET
Gate-source voltage: ±20V
Case: DFN8
On-state resistance: 2.3mΩ
auf Bestellung 2684 Stücke:
Lieferzeit 14-21 Tag (e)
81+1.06 EUR
104+0.82 EUR
119+0.71 EUR
130+0.65 EUR
500+0.62 EUR
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AONS32304Alpha & Omega Semiconductor Inc.Description: MOSFET N-CH 30V 40A/140A 8DFN
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-PowerSMD, Flat Leads
Packaging: Tape & Reel (TR)
Input Capacitance (Ciss) (Max) @ Vds: 5970 pF @ 15 V
Gate Charge (Qg) (Max) @ Vgs: 130 nC @ 10 V
Drain to Source Voltage (Vdss): 30 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Part Status: Active
Supplier Device Package: 8-DFN (5x6)
Vgs(th) (Max) @ Id: 2.1V @ 250µA
Power Dissipation (Max): 6.2W (Ta), 78W (Tc)
Rds On (Max) @ Id, Vgs: 2.3mOhm @ 20A, 10V
Current - Continuous Drain (Id) @ 25°C: 40A (Ta), 140A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
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AONS32304Alpha & Omega SemiconductorTrans MOSFET N-CH 30V 140A 8-Pin DFN EP T/R
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AONS32306Alpha & Omega Semiconductor Inc.Description: N
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerSMD, Flat Leads
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 36A (Tc)
Rds On (Max) @ Id, Vgs: 3.6mOhm @ 20A, 10V
Power Dissipation (Max): 6.2W (Ta), 50W (Tc)
Vgs(th) (Max) @ Id: 2.1V @ 250µA
Supplier Device Package: 8-DFN (5x6)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 60 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4080 pF @ 15 V
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AONS32306ALPHA & OMEGA SEMICONDUCTORCategory: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 36A; 20W; DFN5x6
Mounting: SMD
Power dissipation: 20W
Gate charge: 63nC
Polarisation: unipolar
Drain current: 36A
Kind of channel: enhancement
Drain-source voltage: 30V
Type of transistor: N-MOSFET
Gate-source voltage: ±20V
Case: DFN5x6
On-state resistance: 3.6mΩ
auf Bestellung 2732 Stücke:
Lieferzeit 14-21 Tag (e)
81+1.06 EUR
146+0.58 EUR
165+0.51 EUR
184+0.46 EUR
500+0.44 EUR
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AONS32310Alpha & Omega SemiconductorTrans MOSFET N-CH 30V 400A 8-Pin DFN EP T/R
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AONS32310Alpha & Omega Semiconductor Inc.Description: MOSFET N-CH 30V 60A/400A 8DFN
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerSMD, Flat Leads
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 60A (Ta), 400A (Tc)
Rds On (Max) @ Id, Vgs: 1.05mOhm @ 20A, 10V
Power Dissipation (Max): 6.2W (Ta), 400W (Tc)
Vgs(th) (Max) @ Id: 1.8V @ 250µA
Supplier Device Package: 8-DFN (5x6)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 240 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 15350 pF @ 15 V
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3000+1.76 EUR
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AONS32310ALPHA & OMEGA SEMICONDUCTORCategory: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 60A; 6.2W; DFN8
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 60A
Power dissipation: 6.2W
Case: DFN8
Gate-source voltage: ±20V
On-state resistance: 1.05mΩ
Mounting: SMD
Gate charge: 240nC
Kind of channel: enhancement
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AONS32310
Produktcode: 208114
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Transistoren > MOSFET N-CH
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AONS32310Alpha & Omega Semiconductor Inc.Description: MOSFET N-CH 30V 60A/400A 8DFN
Packaging: Cut Tape (CT)
Package / Case: 8-PowerSMD, Flat Leads
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 60A (Ta), 400A (Tc)
Rds On (Max) @ Id, Vgs: 1.05mOhm @ 20A, 10V
Power Dissipation (Max): 6.2W (Ta), 400W (Tc)
Vgs(th) (Max) @ Id: 1.8V @ 250µA
Supplier Device Package: 8-DFN (5x6)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 240 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 15350 pF @ 15 V
auf Bestellung 38211 Stücke:
Lieferzeit 10-14 Tag (e)
4+5.84 EUR
10+3.8 EUR
100+2.63 EUR
500+2.12 EUR
1000+2.06 EUR
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AONS32311Alpha & Omega Semiconductor Inc.Description: N
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerSMD, Flat Leads
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 56A (Ta), 220A (Tc)
Rds On (Max) @ Id, Vgs: 1.35mOhm @ 20A, 10V
Power Dissipation (Max): 6.2W (Ta), 119W (Tc)
Vgs(th) (Max) @ Id: 2.3V @ 250µA
Supplier Device Package: 8-DFN (5x6)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 150 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 6060 pF @ 15 V
Produkt ist nicht verfügbar
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AONS32314ALPHA & OMEGA SEMICONDUCTORCategory: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 26A; 10W; DFN5x6
Case: DFN5x6
Kind of channel: enhancement
Type of transistor: N-MOSFET
Mounting: SMD
Polarisation: unipolar
Gate charge: 22nC
On-state resistance: 8.7mΩ
Power dissipation: 10W
Drain current: 26A
Gate-source voltage: ±20V
Drain-source voltage: 30V
Produkt ist nicht verfügbar
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AONS32314Alpha & Omega Semiconductor Inc.Description: N
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerSMD, Flat Leads
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 18.5A (Ta), 32A (Tc)
Rds On (Max) @ Id, Vgs: 8.7mOhm @ 20A, 10V
Power Dissipation (Max): 5W (Ta), 25W (Tc)
Vgs(th) (Max) @ Id: 2.25V @ 250µA
Supplier Device Package: 8-DFN (5x6)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 32 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1420 pF @ 15 V
Produkt ist nicht verfügbar
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AONS32314
Produktcode: 188230
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Transistoren > MOSFET N-CH
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AONS34304CAlpha & Omega Semiconductor Inc.Description: N
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerSMD, Flat Leads
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 84A (Ta), 200A (Tc)
Rds On (Max) @ Id, Vgs: 0.68mOhm @ 20A, 10V
Power Dissipation (Max): 7.3W (Ta), 208W (Tc)
Vgs(th) (Max) @ Id: 2.2V @ 250µA
Supplier Device Package: 8-DFN (5x6)
Drive Voltage (Max Rds On, Min Rds On): 6.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 340 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 11200 pF @ 15 V
Produkt ist nicht verfügbar
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AONS34304CAlpha & Omega Semiconductor30V N Channel MOSFET
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AONS34306CAlpha & Omega SemiconductorLow Voltage MOSFETs (12V - 30V)
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AONS34356Alpha & Omega SemiconductorAONS34356
Produkt ist nicht verfügbar
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AONS36302Alpha & Omega Semiconductor Inc.Description: MOSFET N-CH 30V 146A 8DFN
Mounting Type: Surface Mount
Package / Case: 8-PowerSMD, Flat Leads
Packaging: Tape & Reel (TR)
Input Capacitance (Ciss) (Max) @ Vds: 3860 pF @ 15 V
Gate Charge (Qg) (Max) @ Vgs: 60 nC @ 10 V
Drain to Source Voltage (Vdss): 30 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Supplier Device Package: 8-DFN (5x6)
Vgs(th) (Max) @ Id: 1.8V @ 250µA
Power Dissipation (Max): 57W (Tc)
FET Feature: Schottky Diode (Body)
Rds On (Max) @ Id, Vgs: 1.8mOhm @ 20A, 10V
Current - Continuous Drain (Id) @ 25°C: 146A
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
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AONS36302Alpha & Omega Semiconductor30V N Channel MOSFET
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AONS36303Alpha & Omega Semiconductor Inc.Description: MOSFET N-CH 30V 5X6 8DFN
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar
 Mindestbestellmenge: 3000 Stücke
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AONS36304Alpha & Omega Semiconductor Inc.Description: N
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerSMD, Flat Leads
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 37A (Ta), 85A (Tc)
Rds On (Max) @ Id, Vgs: 3mOhm @ 20A, 10V
Power Dissipation (Max): 6.2W (Ta), 42W (Tc)
Vgs(th) (Max) @ Id: 1.9V @ 250µA
Supplier Device Package: 8-DFN (5x6)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 60 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2430 pF @ 15 V
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AONS36306Alpha & Omega Semiconductor Inc.Description: MOSFET N-CH 30V 28A/63A 8DFN
Input Capacitance (Ciss) (Max) @ Vds: 1000 pF @ 15 V
Gate Charge (Qg) (Max) @ Vgs: 30 nC @ 10 V
Drain to Source Voltage (Vdss): 30 V
Vgs (Max): ±20V
Part Status: Active
Supplier Device Package: 8-DFN (5x6)
Vgs(th) (Max) @ Id: 2.2V @ 250µA
Power Dissipation (Max): 6.2W (Ta), 31W (Tc)
Rds On (Max) @ Id, Vgs: 5.2mOhm @ 20A, 10V
Current - Continuous Drain (Id) @ 25°C: 28A (Ta), 63A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-PowerSMD, Flat Leads
Packaging: Tape & Reel (TR)
auf Bestellung 3000 Stücke:
Lieferzeit 10-14 Tag (e)
3000+0.38 EUR
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AONS36306Alpha & Omega SemiconductorN-Channel MOSFET
auf Bestellung 3000 Stücke:
Lieferzeit 14-21 Tag (e)
3000+0.3 EUR
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AONS36306Alpha & Omega SemiconductorN-Channel MOSFET
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AONS36306ALPHA & OMEGA SEMICONDUCTORCategory: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 63A; Idm: 108A; 12.5W; DFN5x6
Case: DFN5x6
Kind of channel: enhancement
Mounting: SMD
Type of transistor: N-MOSFET
Kind of package: reel; tape
Polarisation: unipolar
Gate charge: 17nC
On-state resistance: 5.2mΩ
Power dissipation: 12.5W
Gate-source voltage: ±20V
Drain-source voltage: 30V
Drain current: 63A
Pulsed drain current: 108A
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AONS36306Alpha & Omega Semiconductor Inc.Description: MOSFET N-CH 30V 28A/63A 8DFN
Vgs (Max): ±20V
Part Status: Active
Supplier Device Package: 8-DFN (5x6)
Vgs(th) (Max) @ Id: 2.2V @ 250µA
Power Dissipation (Max): 6.2W (Ta), 31W (Tc)
Rds On (Max) @ Id, Vgs: 5.2mOhm @ 20A, 10V
Current - Continuous Drain (Id) @ 25°C: 28A (Ta), 63A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-PowerSMD, Flat Leads
Packaging: Cut Tape (CT)
Input Capacitance (Ciss) (Max) @ Vds: 1000 pF @ 15 V
Gate Charge (Qg) (Max) @ Vgs: 30 nC @ 10 V
Drain to Source Voltage (Vdss): 30 V
auf Bestellung 5097 Stücke:
Lieferzeit 10-14 Tag (e)
14+1.59 EUR
22+0.98 EUR
100+0.63 EUR
500+0.49 EUR
1000+0.44 EUR
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AONS36306
Produktcode: 213273
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Transistoren > MOSFET N-CH
Produkt ist nicht verfügbar
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AONS36306Alpha & Omega SemiconductorN-Channel MOSFET
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Lieferzeit 14-21 Tag (e)
3000+0.3 EUR
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AONS36308Alpha & Omega Semiconductor Inc.Description: MOSFET N-CH 30V 26A/53A 8DFN
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 26A (Ta), 53A (Tc)
Rds On (Max) @ Id, Vgs: 6.1mOhm @ 20A, 10V
Power Dissipation (Max): 6.2W (Ta), 26W (Tc)
Vgs(th) (Max) @ Id: 2.2V @ 250µA
Supplier Device Package: 8-DFN-EP (5x6)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 30 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1000 pF @ 15 V
auf Bestellung 3000 Stücke:
Lieferzeit 10-14 Tag (e)
3000+0.35 EUR
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AONS36312Alpha & Omega Semiconductor Inc.Description: N
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerSMD, Flat Leads
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 42.5A (Ta), 85A (Tc)
Rds On (Max) @ Id, Vgs: 2.1mOhm @ 20A, 10V
Power Dissipation (Max): 6.2W (Ta), 48W (Tc)
Vgs(th) (Max) @ Id: 1.9V @ 250µA
Supplier Device Package: 8-DFN (5x6)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±12V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 60 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2500 pF @ 15 V
Produkt ist nicht verfügbar
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AONS36314Alpha & Omega Semiconductor Inc.Description: MOSFET N-CH 30V 36.5A/85A 8DFN
Input Capacitance (Ciss) (Max) @ Vds: 1890 pF @ 15 V
Gate Charge (Qg) (Max) @ Vgs: 40 nC @ 10 V
Drain to Source Voltage (Vdss): 30 V
Vgs (Max): ±12V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Part Status: Active
Supplier Device Package: 8-DFN (5x6)
Vgs(th) (Max) @ Id: 1.9V @ 250µA
Power Dissipation (Max): 6.2W (Ta), 42W (Tc)
Rds On (Max) @ Id, Vgs: 2.9mOhm @ 20A, 10V
Current - Continuous Drain (Id) @ 25°C: 36.5A (Ta), 85A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-PowerSMD, Flat Leads
Packaging: Cut Tape (CT)
auf Bestellung 2898 Stücke:
Lieferzeit 10-14 Tag (e)
9+2.37 EUR
15+1.49 EUR
100+0.98 EUR
500+0.76 EUR
1000+0.69 EUR
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AONS36314Alpha & Omega SemiconductorTrans MOSFET N-CH 30V 85A 8-Pin DFN EP T/R
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AONS36314Alpha & Omega Semiconductor Inc.Description: MOSFET N-CH 30V 36.5A/85A 8DFN
Input Capacitance (Ciss) (Max) @ Vds: 1890 pF @ 15 V
Gate Charge (Qg) (Max) @ Vgs: 40 nC @ 10 V
Drain to Source Voltage (Vdss): 30 V
Vgs (Max): ±12V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Part Status: Active
Supplier Device Package: 8-DFN (5x6)
Vgs(th) (Max) @ Id: 1.9V @ 250µA
Power Dissipation (Max): 6.2W (Ta), 42W (Tc)
Rds On (Max) @ Id, Vgs: 2.9mOhm @ 20A, 10V
Current - Continuous Drain (Id) @ 25°C: 36.5A (Ta), 85A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-PowerSMD, Flat Leads
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar
 Mindestbestellmenge: 3000 Stücke
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AONS36316Alpha & Omega Semiconductor Inc.Description: MOSFET N-CH 30V 28A/32A 8DFN
Packaging: Cut Tape (CT)
Package / Case: 8-PowerSMD, Flat Leads
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 28A (Ta), 32A (Tc)
Rds On (Max) @ Id, Vgs: 4.1mOhm @ 20A, 10V
Power Dissipation (Max): 5W (Ta), 26W (Tc)
Vgs(th) (Max) @ Id: 1.9V @ 250µA
Supplier Device Package: 8-DFN (5x6)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±12V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 42 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2005 pF @ 15 V
auf Bestellung 2727 Stücke:
Lieferzeit 10-14 Tag (e)
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18+1.19 EUR
100+0.77 EUR
500+0.6 EUR
1000+0.55 EUR
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AONS36316Alpha & Omega Semiconductor Inc.Description: MOSFET N-CH 30V 28A/32A 8DFN
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerSMD, Flat Leads
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 28A (Ta), 32A (Tc)
Rds On (Max) @ Id, Vgs: 4.1mOhm @ 20A, 10V
Power Dissipation (Max): 5W (Ta), 26W (Tc)
Vgs(th) (Max) @ Id: 1.9V @ 250µA
Supplier Device Package: 8-DFN (5x6)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±12V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 42 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2005 pF @ 15 V
Produkt ist nicht verfügbar
 Mindestbestellmenge: 3000 Stücke
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AONS36346Alpha & Omega SemiconductorN-Channel MOSFET
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 Mindestbestellmenge: 3000 Stücke
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AONS36346Alpha & Omega Semiconductor Inc.Description: MOSFET N-CH 30V 26.5A/60A 8DFN
Produkt ist nicht verfügbar
 Mindestbestellmenge: 3000 Stücke
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