Produkte > AON

Wählen Sie Seite:   [  << Vorherige Seite ]  1 2 3 4 5 6 7 8 9 10 11 12 13 14  [ Nächste Seite >> ]
BezeichnungHerstellerBeschreibungVerfügbarkeitPrivatkunde
AONS36348Alpha & Omega SemiconductorN-Channel MOSFET
Produkt ist nicht verfügbar
 Mindestbestellmenge: 3000 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
AONS36348Alpha & Omega Semiconductor Inc.Description: MOSFET N-CH 30V 24A/50A 8DFN
Produkt ist nicht verfügbar
 Mindestbestellmenge: 3000 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
AONS36352Alpha & Omega Semiconductor Inc.Description: MOSFET N-CH 30V DFN 5X6
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
AONS36354Alpha & Omega Semiconductor Inc.Description: MOSFET N-CH 30V DFN 5X6
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
AONS38108Alpha & Omega Semiconductor Inc.Description: AONS38108
Input Capacitance (Ciss) (Max) @ Vds: 4220 pF @ 12.5 V
Gate Charge (Qg) (Max) @ Vgs: 80 nC @ 10 V
Drain to Source Voltage (Vdss): 25 V
Vgs (Max): ±16V
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Supplier Device Package: 8-DFN (5x6)
Vgs(th) (Max) @ Id: 2.6V @ 250µA
Power Dissipation (Max): 4.8W (Ta), 192W (Tc)
Rds On (Max) @ Id, Vgs: 1mOhm @ 20A, 10V
Current - Continuous Drain (Id) @ 25°C: 56A (Ta), 355A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-PowerSMD, Flat Leads
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar
 Mindestbestellmenge: 3000 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
AONS38203ALPHA & OMEGA SEMICONDUCTORCategory: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 25V; 311A; Idm: 928A; 83W; DFN5x6
Gate-source voltage: ±16V
Drain-source voltage: 25V
Power dissipation: 83W
Drain current: 311A
Pulsed drain current: 928A
Case: DFN5x6
Kind of channel: enhancement
Mounting: SMD
Type of transistor: N-MOSFET
Kind of package: reel; tape
Polarisation: unipolar
Gate charge: 104nC
On-state resistance: 580µΩ
Produkt ist nicht verfügbar
 Mindestbestellmenge: 3000 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
AONS38203Alpha & Omega Semiconductor Inc.Description: N
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerSMD, Flat Leads
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 85A (Ta), 311A (Tc)
Rds On (Max) @ Id, Vgs: 0.58mOhm @ 20A, 10V
Power Dissipation (Max): 6.2W (Ta), 208W (Tc)
Vgs(th) (Max) @ Id: 2.1V @ 250µA
Supplier Device Package: 8-DFN (5x6)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±16V
Drain to Source Voltage (Vdss): 25 V
Gate Charge (Qg) (Max) @ Vgs: 150 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 8350 pF @ 12.5 V
Produkt ist nicht verfügbar
 Mindestbestellmenge: 3000 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
AONS420A60Alpha & Omega Semiconductor Inc.Description: N
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 11A (Tc)
Rds On (Max) @ Id, Vgs: 420mOhm @ 5.5A, 10V
Power Dissipation (Max): 156W (Tc)
Vgs(th) (Max) @ Id: 3.8V @ 250µA
Supplier Device Package: 8-DFN-EP (5x6)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 18 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 955 pF @ 100 V
Produkt ist nicht verfügbar
 Mindestbestellmenge: 3000 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
AONS420A60ALPHA & OMEGA SEMICONDUCTORCategory: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 11A; 156W; DFN8
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 11A
Power dissipation: 156W
Case: DFN8
Gate-source voltage: ±20V
On-state resistance: 0.42Ω
Mounting: SMD
Gate charge: 20nC
Kind of package: reel; tape
Kind of channel: enhancement
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
AONS420A60Alpha & Omega SemiconductorTrans MOSFET N-CH 600V 2.2A 8-Pin DFN-F EP T/R
Produkt ist nicht verfügbar
 Mindestbestellmenge: 3000 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
AONS420A70Alpha & Omega SemiconductorHigh Voltage MOSFETs (500V - 1000V)
Produkt ist nicht verfügbar
 Mindestbestellmenge: 3000 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
AONS420A70Alpha & Omega Semiconductor Inc.Description: LINEAR IC
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 2A (Ta), 12A (Tc)
Rds On (Max) @ Id, Vgs: 420mOhm @ 6A, 10V
Power Dissipation (Max): 4.2W (Ta), 183W (Tc)
Vgs(th) (Max) @ Id: 4.6V @ 250µA
Supplier Device Package: 8-DFN-EP (5x6)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 700 V
Gate Charge (Qg) (Max) @ Vgs: 21.5 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1360 pF @ 100 V
Produkt ist nicht verfügbar
 Mindestbestellmenge: 3000 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
AONS520A70Alpha & Omega Semiconductor Inc.Description: N
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 1.8A (Ta), 11A (Tc)
Rds On (Max) @ Id, Vgs: 520mOhm @ 2.3A, 10V
Power Dissipation (Max): 4.2W (Ta), 166W (Tc)
Vgs(th) (Max) @ Id: 3.6V @ 250µA
Supplier Device Package: 8-DFN-EP (5x6)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 700 V
Gate Charge (Qg) (Max) @ Vgs: 16.5 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1115 pF @ 100 V
Produkt ist nicht verfügbar
 Mindestbestellmenge: 3000 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
AONS62530ALPHA & OMEGA SEMICONDUCTORCategory: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 150V; 19A; Idm: 43A; 19.2W; DFN5x6
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 150V
Drain current: 19A
Pulsed drain current: 43A
Power dissipation: 19.2W
Case: DFN5x6
Gate-source voltage: ±20V
On-state resistance: 58mΩ
Mounting: SMD
Gate charge: 11.5nC
Kind of package: reel; tape
Kind of channel: enhancement
Produkt ist nicht verfügbar
 Mindestbestellmenge: 3000 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
AONS62530Alpha & Omega Semiconductor150V N-Channel aMOS
Produkt ist nicht verfügbar
 Mindestbestellmenge: 3000 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
AONS62602Alpha & Omega Semiconductor Inc.Description: N
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerSMD, Flat Leads
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 41A (Ta), 85A (Tc)
Rds On (Max) @ Id, Vgs: 2.5mOhm @ 20A, 10V
Power Dissipation (Max): 7.3W (Ta), 208W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: 8-DFN (5x6)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 110 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 5630 pF @ 30 V
Produkt ist nicht verfügbar
 Mindestbestellmenge: 3000 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
AONS62614Alpha & Omega SemiconductorTrans MOSFET N-CH 60V 37A 8-Pin DFN EP T/R
Produkt ist nicht verfügbar
 Mindestbestellmenge: 3000 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
AONS62614Alpha & Omega Semiconductor Inc.Description: N
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerSMD, Flat Leads
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 37A (Ta), 100A (Tc)
Rds On (Max) @ Id, Vgs: 2.5mOhm @ 20A, 10V
Power Dissipation (Max): 6.2W (Ta), 119W (Tc)
Vgs(th) (Max) @ Id: 2.2V @ 250µA
Supplier Device Package: 8-DFN (5x6)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 90 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3660 pF @ 30 V
Produkt ist nicht verfügbar
 Mindestbestellmenge: 3000 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
AONS62614TAlpha & Omega SemiconductorTrans MOSFET N-CH 60V 39A 8-Pin DFN EP T/R
Produkt ist nicht verfügbar
 Mindestbestellmenge: 3000 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
AONS62614T
Produktcode: 214185
zu Favoriten hinzufügen Lieblingsprodukt
Transistoren > MOSFET N-CH
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
AONS62614TAlpha & Omega Semiconductor Inc.Description: MOSFET N-CH 60V 39A/100A 8DFN
Input Capacitance (Ciss) (Max) @ Vds: 3660 pF @ 30 V
Gate Charge (Qg) (Max) @ Vgs: 90 nC @ 10 V
Drain to Source Voltage (Vdss): 60 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Part Status: Active
Supplier Device Package: 8-DFN (5x6)
Vgs(th) (Max) @ Id: 2.2V @ 250µA
Power Dissipation (Max): 7.5W (Ta), 142W (Tc)
Rds On (Max) @ Id, Vgs: 2.5mOhm @ 20A, 10V
Current - Continuous Drain (Id) @ 25°C: 39A (Ta), 100A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-PowerSMD, Flat Leads
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar
 Mindestbestellmenge: 3000 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
AONS62614TAlpha? SemiconductorN-канальний ПТ, Udss, В = 60, Id = 100 А, Ciss, пФ @ Uds, В = 3660 @ 30, Qg, нКл = 90, Rds = 2,5 мОм, Ugs(th) = 2,2 В, Р, Вт = 142, Тексп, °C = -55...+175, Тип монт. = SMD,... Транзистори Корпус: PowerSMD-8 Од. вим: шт
Anzahl je Verpackung: 3000 Stücke
verfügbar 6 Stücke:
Im Einkaufswagen  Stück im Wert von  UAH
AONS62614TAlpha & Omega Semiconductor Inc.Description: MOSFET N-CH 60V 39A/100A 8DFN
Input Capacitance (Ciss) (Max) @ Vds: 3660 pF @ 30 V
Gate Charge (Qg) (Max) @ Vgs: 90 nC @ 10 V
Drain to Source Voltage (Vdss): 60 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Part Status: Active
Supplier Device Package: 8-DFN (5x6)
Vgs(th) (Max) @ Id: 2.2V @ 250µA
Power Dissipation (Max): 7.5W (Ta), 142W (Tc)
Rds On (Max) @ Id, Vgs: 2.5mOhm @ 20A, 10V
Current - Continuous Drain (Id) @ 25°C: 39A (Ta), 100A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-PowerSMD, Flat Leads
Packaging: Cut Tape (CT)
auf Bestellung 1907 Stücke:
Lieferzeit 10-14 Tag (e)
4+5.65 EUR
10+3.68 EUR
100+2.55 EUR
500+2.14 EUR
Mindestbestellmenge: 4 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
AONS62618Alpha & Omega Semiconductor Inc.Description: N
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerSMD, Flat Leads
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 24A (Ta), 44A (Tc)
Rds On (Max) @ Id, Vgs: 4.7mOhm @ 20A, 10V
Power Dissipation (Max): 5W (Ta), 56W (Tc)
Vgs(th) (Max) @ Id: 2.3V @ 250µA
Supplier Device Package: 8-DFN (5x6)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 65 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2520 pF @ 30 V
Produkt ist nicht verfügbar
 Mindestbestellmenge: 3000 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
AONS62618Alpha & Omega SemiconductorN-Channel MOSFET
Produkt ist nicht verfügbar
 Mindestbestellmenge: 3000 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
AONS62814TAlpha & Omega SemiconductorSingle MV MOSFET
Produkt ist nicht verfügbar
 Mindestbestellmenge: 3000 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
AONS62814TAlpha & Omega Semiconductor Inc.Description: N
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerSMD, Flat Leads
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 40A (Ta), 100A (Tc)
Rds On (Max) @ Id, Vgs: 2.6mOhm @ 20A, 10V
Power Dissipation (Max): 8.8W (Ta), 258W (Tc)
Vgs(th) (Max) @ Id: 3.2V @ 250µA
Supplier Device Package: 8-DFN (5x6)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 100 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4940 pF @ 40 V
Produkt ist nicht verfügbar
 Mindestbestellmenge: 3000 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
AONS62920Alpha & Omega Semiconductor Inc.Description: N
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerSMD, Flat Leads
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 22A (Ta), 48A (Tc)
Rds On (Max) @ Id, Vgs: 6.3mOhm @ 20A, 10V
Power Dissipation (Max): 6.2W (Ta), 113.5W (Tc)
Vgs(th) (Max) @ Id: 2.3V @ 250µA
Supplier Device Package: 8-DFN (5x6)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 95 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4525 pF @ 50 V
Produkt ist nicht verfügbar
 Mindestbestellmenge: 3000 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
AONS62920ALPHA & OMEGA SEMICONDUCTORCategory: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 48A; 45.5W; DFN5x6
Mounting: SMD
Polarisation: unipolar
Case: DFN5x6
Kind of channel: enhancement
Type of transistor: N-MOSFET
Gate charge: 65nC
On-state resistance: 6.3mΩ
Gate-source voltage: ±20V
Power dissipation: 45.5W
Drain current: 48A
Drain-source voltage: 100V
Produkt ist nicht verfügbar
 Mindestbestellmenge: 3000 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
AONS62922Alpha & Omega Semiconductor Inc.Description: MOSFET N-CH 120V 85A 5X6 8DFN
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerSMD, Flat Leads
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 22A (Ta), 85A (Tc)
Rds On (Max) @ Id, Vgs: 7mOhm @ 20A, 10V
Power Dissipation (Max): 7.3W (Ta), 215W (Tc)
Vgs(th) (Max) @ Id: 2.4V @ 250µA
Supplier Device Package: 8-DFN (5x6)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 120 V
Gate Charge (Qg) (Max) @ Vgs: 65 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3295 pF @ 60 V
Produkt ist nicht verfügbar
 Mindestbestellmenge: 3000 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
AONS62922ALPHA & OMEGA SEMICONDUCTORCategory: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 120V; 75A; 86W; DFN5x6
Mounting: SMD
Polarisation: unipolar
Case: DFN5x6
Kind of channel: enhancement
Type of transistor: N-MOSFET
Gate charge: 46nC
On-state resistance: 7mΩ
Gate-source voltage: ±20V
Power dissipation: 86W
Drain current: 75A
Drain-source voltage: 120V
Produkt ist nicht verfügbar
 Mindestbestellmenge: 3000 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
AONS62922Alpha & Omega Semiconductor Inc.Description: MOSFET N-CH 120V 85A 5X6 8DFN
Packaging: Cut Tape (CT)
Package / Case: 8-PowerSMD, Flat Leads
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 22A (Ta), 85A (Tc)
Rds On (Max) @ Id, Vgs: 7mOhm @ 20A, 10V
Power Dissipation (Max): 7.3W (Ta), 215W (Tc)
Vgs(th) (Max) @ Id: 2.4V @ 250µA
Supplier Device Package: 8-DFN (5x6)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 120 V
Gate Charge (Qg) (Max) @ Vgs: 65 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3295 pF @ 60 V
auf Bestellung 1134 Stücke:
Lieferzeit 10-14 Tag (e)
5+5.13 EUR
10+3.32 EUR
100+2.28 EUR
500+1.89 EUR
Mindestbestellmenge: 5 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
AONS62922Alpha & Omega Semiconductor120V N-Channel AlphaSGT TM
Produkt ist nicht verfügbar
 Mindestbestellmenge: 3000 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
AONS62922 Transistor
Produktcode: 203122
zu Favoriten hinzufügen Lieblingsprodukt
Transistoren > MOSFET N-CH
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
AONS660A70FALPHA&OMEGA700V, A MOS5 TM N-CHANNEL POWER AONS660A70F TAONS660A70F
Anzahl je Verpackung: 2 Stücke
auf Bestellung 5 Stücke:
Lieferzeit 7-14 Tag (e)
4+9.79 EUR
Mindestbestellmenge: 4 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
AONS660A70FAlpha & Omega Semiconductor Inc.Description: MOSFET N-CH 700V 1.7A/9.6A 8DFN
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-PowerVDFN
Packaging: Tape & Reel (TR)
Input Capacitance (Ciss) (Max) @ Vds: 900 pF @ 100 V
Gate Charge (Qg) (Max) @ Vgs: 14.5 nC @ 10 V
Drain to Source Voltage (Vdss): 700 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Active
Supplier Device Package: 8-DFN-EP (5x6)
Vgs(th) (Max) @ Id: 4V @ 250µA
Power Dissipation (Max): 4.1W (Ta), 138W (Tc)
Rds On (Max) @ Id, Vgs: 660mOhm @ 2.5A, 10V
Current - Continuous Drain (Id) @ 25°C: 1.7A (Ta), 9.6A (Tc)
Produkt ist nicht verfügbar
 Mindestbestellmenge: 3000 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
AONS660A70FAlpha & Omega SemiconductorTrans MOSFET N-CH 700V 1.7A 8-Pin DFN-F EP T/R
Produkt ist nicht verfügbar
 Mindestbestellmenge: 3000 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
AONS660A70FAlpha & Omega Semiconductor Inc.Description: MOSFET N-CH 700V 1.7A/9.6A 8DFN
Input Capacitance (Ciss) (Max) @ Vds: 900 pF @ 100 V
Gate Charge (Qg) (Max) @ Vgs: 14.5 nC @ 10 V
Drain to Source Voltage (Vdss): 700 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Active
Supplier Device Package: 8-DFN-EP (5x6)
Vgs(th) (Max) @ Id: 4V @ 250µA
Power Dissipation (Max): 4.1W (Ta), 138W (Tc)
Rds On (Max) @ Id, Vgs: 660mOhm @ 2.5A, 10V
Current - Continuous Drain (Id) @ 25°C: 1.7A (Ta), 9.6A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-PowerVDFN
Packaging: Cut Tape (CT)
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
AONS66402Alpha & Omega SemiconductorTrans MOSFET N-CH 40V 49A 8-Pin DFN EP T/R
auf Bestellung 108000 Stücke:
Lieferzeit 14-21 Tag (e)
3000+1.58 EUR
Mindestbestellmenge: 3000 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
AONS66402Alpha & Omega Semiconductor Inc.Description: MOSFET N-CH 40V 49A/85A
Input Capacitance (Ciss) (Max) @ Vds: 5570 pF @ 20 V
Gate Charge (Qg) (Max) @ Vgs: 105 nC @ 10 V
Drain to Source Voltage (Vdss): 40 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Supplier Device Package: 8-DFN (5x6)
Vgs(th) (Max) @ Id: 2.3V @ 250µA
Power Dissipation (Max): 6.2W (Ta), 119W (Tc)
Rds On (Max) @ Id, Vgs: 1.6mOhm @ 20A, 10V
Current - Continuous Drain (Id) @ 25°C: 49A (Ta), 85A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-PowerSMD, Flat Leads
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar
 Mindestbestellmenge: 3000 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
AONS66402Alpha & Omega SemiconductorTrans MOSFET N-CH 40V 49A 8-Pin DFN EP T/R
auf Bestellung 108000 Stücke:
Lieferzeit 14-21 Tag (e)
3000+1.06 EUR
Mindestbestellmenge: 3000 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
AONS66405Alpha & Omega Semiconductor Inc.Description: N
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerSMD, Flat Leads
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 68A (Ta), 310A (Tc)
Rds On (Max) @ Id, Vgs: 0.95mOhm @ 20A, 10V
Power Dissipation (Max): 7.3W (Ta), 215W (Tc)
Vgs(th) (Max) @ Id: 3.4V @ 250µA
Supplier Device Package: 8-DFN (5x6)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 8V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 165 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 9700 pF @ 20 V
Produkt ist nicht verfügbar
 Mindestbestellmenge: 3000 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
AONS66405Alpha & Omega SemiconductorMedium Voltage MOSFETs (40V - 400V)
Produkt ist nicht verfügbar
 Mindestbestellmenge: 3000 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
AONS66405TAlpha & Omega SemiconductorMedium Voltage MOSFETs
Produkt ist nicht verfügbar
 Mindestbestellmenge: 3000 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
AONS66406Alpha & Omega SemiconductorTrans MOSFET N-CH 40V 22A 8-Pin DFN EP T/R
Produkt ist nicht verfügbar
 Mindestbestellmenge: 3000 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
AONS66406Alpha & Omega Semiconductor Inc.Description: N
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerSMD, Flat Leads
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 22A (Ta), 30A (Tc)
Rds On (Max) @ Id, Vgs: 6.1mOhm @ 20A, 10V
Power Dissipation (Max): 5W (Ta), 36.5W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: 8-DFN (5x6)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 30 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1480 pF @ 20 V
Produkt ist nicht verfügbar
 Mindestbestellmenge: 3000 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
AONS66407Alpha & Omega Semiconductor Inc.Description: N
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerSMD, Flat Leads
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 69A (Ta), 310A (Tc)
Rds On (Max) @ Id, Vgs: 0.85mOhm @ 20A, 10V
Power Dissipation (Max): 7.3W (Ta), 215W (Tc)
Vgs(th) (Max) @ Id: 2.3V @ 250µA
Supplier Device Package: 8-DFN (5x6)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 162 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 9030 pF @ 20 V
Produkt ist nicht verfügbar
 Mindestbestellmenge: 3000 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
AONS66407Alpha & Omega Semiconductor Inc.Description: N
Packaging: Cut Tape (CT)
Package / Case: 8-PowerSMD, Flat Leads
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 69A (Ta), 310A (Tc)
Rds On (Max) @ Id, Vgs: 0.85mOhm @ 20A, 10V
Power Dissipation (Max): 7.3W (Ta), 215W (Tc)
Vgs(th) (Max) @ Id: 2.3V @ 250µA
Supplier Device Package: 8-DFN (5x6)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 162 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 9030 pF @ 20 V
auf Bestellung 2650 Stücke:
Lieferzeit 10-14 Tag (e)
4+5.65 EUR
10+3.67 EUR
100+2.53 EUR
500+2.13 EUR
Mindestbestellmenge: 4 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
AONS66407Alpha & Omega SemiconductorMedium Voltage MOSFETs (40V - 400V)
Produkt ist nicht verfügbar
 Mindestbestellmenge: 3000 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
AONS66408Alpha & Omega Semiconductor Inc.Description: N
Input Capacitance (Ciss) (Max) @ Vds: 2808 pF @ 20 V
Gate Charge (Qg) (Max) @ Vgs: 51 nC @ 10 V
Drain to Source Voltage (Vdss): 40 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Supplier Device Package: 8-DFN (5x6)
Vgs(th) (Max) @ Id: 2.3V @ 250µA
Power Dissipation (Max): 6.2W (Ta), 48W (Tc)
Rds On (Max) @ Id, Vgs: 3.1mOhm @ 20A, 10V
Current - Continuous Drain (Id) @ 25°C: 33A (Ta), 85A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-PowerSMD, Flat Leads
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar
 Mindestbestellmenge: 3000 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
AONS66408Alpha & Omega SemiconductorTrans MOSFET N-CH 40V 33A 8-Pin DFN EP T/R
Produkt ist nicht verfügbar
 Mindestbestellmenge: 3000 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
AONS66520Alpha & Omega Semiconductor Inc.Description: N
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerSMD, Flat Leads
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 17A (Ta), 100A (Tc)
Rds On (Max) @ Id, Vgs: 9.5mOhm @ 20A, 10V
Power Dissipation (Max): 6.2W (Ta), 215W (Tc)
Vgs(th) (Max) @ Id: 2.6V @ 250µA
Supplier Device Package: 8-DFN (5x6)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 150 V
Gate Charge (Qg) (Max) @ Vgs: 65 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3200 pF @ 75 V
Produkt ist nicht verfügbar
 Mindestbestellmenge: 3000 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
AONS66520Alpha & Omega SemiconductorN Channel Trench Power MOSFET
Produkt ist nicht verfügbar
 Mindestbestellmenge: 3000 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
AONS66520Alpha & Omega Semiconductor Inc.Description: N
Input Capacitance (Ciss) (Max) @ Vds: 3200 pF @ 75 V
Gate Charge (Qg) (Max) @ Vgs: 65 nC @ 10 V
Drain to Source Voltage (Vdss): 150 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Supplier Device Package: 8-DFN (5x6)
Vgs(th) (Max) @ Id: 2.6V @ 250µA
Power Dissipation (Max): 6.2W (Ta), 215W (Tc)
Rds On (Max) @ Id, Vgs: 9.5mOhm @ 20A, 10V
Current - Continuous Drain (Id) @ 25°C: 17A (Ta), 100A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-PowerSMD, Flat Leads
Packaging: Cut Tape (CT)
auf Bestellung 1790 Stücke:
Lieferzeit 10-14 Tag (e)
3+7.63 EUR
10+5.01 EUR
100+3.53 EUR
500+3.19 EUR
Mindestbestellmenge: 3 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
AONS66521ALPHA & OMEGA SEMICONDUCTORCategory: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 150V; 100A; Idm: 400A; 86W; DFN5x6
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 150V
Drain current: 100A
Pulsed drain current: 400A
Power dissipation: 86W
Case: DFN5x6
Gate-source voltage: ±20V
On-state resistance: 9.8mΩ
Mounting: SMD
Gate charge: 32nC
Kind of package: reel; tape
Kind of channel: enhancement
Produkt ist nicht verfügbar
 Mindestbestellmenge: 3000 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
AONS66521Alpha & Omega Semiconductor Inc.Description: N
Input Capacitance (Ciss) (Max) @ Vds: 2600 pF @ 75 V
Gate Charge (Qg) (Max) @ Vgs: 45 nC @ 10 V
Drain to Source Voltage (Vdss): 150 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 8V, 10V
Supplier Device Package: 8-DFN (5x6)
Vgs(th) (Max) @ Id: 4.5V @ 250µA
Power Dissipation (Max): 6.2W (Ta), 215W (Tc)
Rds On (Max) @ Id, Vgs: 9.8mOhm @ 20A, 10V
Current - Continuous Drain (Id) @ 25°C: 16A (Ta), 100A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-PowerSMD, Flat Leads
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar
 Mindestbestellmenge: 3000 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
AONS66521Alpha & Omega Semiconductor Inc.Description: N
Drain to Source Voltage (Vdss): 150 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 8V, 10V
Supplier Device Package: 8-DFN (5x6)
Vgs(th) (Max) @ Id: 4.5V @ 250µA
Power Dissipation (Max): 6.2W (Ta), 215W (Tc)
Rds On (Max) @ Id, Vgs: 9.8mOhm @ 20A, 10V
Current - Continuous Drain (Id) @ 25°C: 16A (Ta), 100A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-PowerSMD, Flat Leads
Packaging: Cut Tape (CT)
Input Capacitance (Ciss) (Max) @ Vds: 2600 pF @ 75 V
Gate Charge (Qg) (Max) @ Vgs: 45 nC @ 10 V
auf Bestellung 1571 Stücke:
Lieferzeit 10-14 Tag (e)
3+7.39 EUR
10+4.86 EUR
100+3.42 EUR
500+3.09 EUR
Mindestbestellmenge: 3 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
AONS66524Alpha & Omega Semiconductor Inc.Description: N
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerSMD, Flat Leads
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 13A (Ta), 56A (Tc)
Rds On (Max) @ Id, Vgs: 16mOhm @ 20A, 10V
Power Dissipation (Max): 6.2W (Ta), 119W (Tc)
Vgs(th) (Max) @ Id: 3.7V @ 250µA
Supplier Device Package: 8-DFN (5x6)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 8V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 150 V
Gate Charge (Qg) (Max) @ Vgs: 35 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1780 pF @ 75 V
Produkt ist nicht verfügbar
 Mindestbestellmenge: 3000 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
AONS66524Alpha & Omega SemiconductorMedium Voltage MOSFETs (40V - 400V)
Produkt ist nicht verfügbar
 Mindestbestellmenge: 3000 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
AONS66609Alpha & Omega Semiconductor Inc.Description: MOSFET N-CH 60V 50A 8DFN
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerSMD, Flat Leads
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 50A (Ta), 304A (Tc)
Rds On (Max) @ Id, Vgs: 1.25mOhm @ 20A, 10V
Power Dissipation (Max): 6.2W (Ta), 215W (Tc)
Vgs(th) (Max) @ Id: 3.3V @ 250µA
Supplier Device Package: 8-DFN (5x6)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 8V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 126 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 6350 pF @ 30 V
Produkt ist nicht verfügbar
 Mindestbestellmenge: 3000 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
AONS66609Alpha & Omega SemiconductorTrans MOSFET N-CH 60V 50A 8-Pin DFN EP
Produkt ist nicht verfügbar
 Mindestbestellmenge: 3000 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
AONS66609Alpha & Omega Semiconductor Inc.Description: MOSFET N-CH 60V 50A 8DFN
Packaging: Cut Tape (CT)
Package / Case: 8-PowerSMD, Flat Leads
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 50A (Ta), 304A (Tc)
Rds On (Max) @ Id, Vgs: 1.25mOhm @ 20A, 10V
Power Dissipation (Max): 6.2W (Ta), 215W (Tc)
Vgs(th) (Max) @ Id: 3.3V @ 250µA
Supplier Device Package: 8-DFN (5x6)
Drive Voltage (Max Rds On, Min Rds On): 8V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 126 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 6350 pF @ 30 V
auf Bestellung 2408 Stücke:
Lieferzeit 10-14 Tag (e)
3+7.33 EUR
10+4.81 EUR
25+4.15 EUR
100+3.42 EUR
250+3.06 EUR
500+2.83 EUR
1000+2.65 EUR
Mindestbestellmenge: 3 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
AONS66609TALPHA & OMEGA SEMICONDUCTORCategory: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 20V; 3.2A; 1.1W; SC70
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 20V
Drain current: 3.2A
Power dissipation: 1.1W
Case: SC70
Gate-source voltage: 8V
On-state resistance: 9.8mΩ
Mounting: SMD
Gate charge: 2.2nC
Kind of channel: enhancement
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
AONS66612Alpha & Omega Semiconductor Inc.Description: MOSFET N-CH 60V 46A/100A 8DFN
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerSMD, Flat Leads
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 46A (Ta), 100A (Tc)
Rds On (Max) @ Id, Vgs: 1.65mOhm @ 20A, 10V
Power Dissipation (Max): 6.2W (Ta), 208W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 250µA
Supplier Device Package: 8-DFN (5x6)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 110 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 5300 pF @ 30 V
auf Bestellung 3000 Stücke:
Lieferzeit 10-14 Tag (e)
3000+2.64 EUR
Mindestbestellmenge: 3000 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
AONS66612Alpha & Omega SemiconductorTrans MOSFET N-CH 60V 46A 8-Pin DFN EP T/R
Produkt ist nicht verfügbar
 Mindestbestellmenge: 3000 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
AONS66612Alpha & Omega Semiconductor Inc.Description: MOSFET N-CH 60V 46A/100A 8DFN
Packaging: Cut Tape (CT)
Package / Case: 8-PowerSMD, Flat Leads
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 46A (Ta), 100A (Tc)
Rds On (Max) @ Id, Vgs: 1.65mOhm @ 20A, 10V
Power Dissipation (Max): 6.2W (Ta), 208W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 250µA
Supplier Device Package: 8-DFN (5x6)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 110 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 5300 pF @ 30 V
auf Bestellung 3929 Stücke:
Lieferzeit 10-14 Tag (e)
3+8.19 EUR
10+5.39 EUR
100+3.81 EUR
500+3.24 EUR
Mindestbestellmenge: 3 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
AONS66612Alpha & Omega SemiconductorTrans MOSFET N-CH 60V 46A 8-Pin DFN EP T/R
Produkt ist nicht verfügbar
 Mindestbestellmenge: 3000 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
AONS66612TAlpha & Omega Semiconductor Inc.Description: 60V N-CHANNEL ALPHASGT
Packaging: Cut Tape (CT)
Package / Case: 8-PowerSMD, Flat Leads
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 48A (Ta), 100A (Tc)
Rds On (Max) @ Id, Vgs: 1.65mOhm @ 20A, 10V
Power Dissipation (Max): 7.5W (Ta), 250W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 250µA
Supplier Device Package: 8-DFN (5x6)
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 110 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 5300 pF @ 30 V
auf Bestellung 5899 Stücke:
Lieferzeit 10-14 Tag (e)
3+8.65 EUR
10+5.72 EUR
100+4.05 EUR
500+3.33 EUR
1000+3.11 EUR
Mindestbestellmenge: 3 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
AONS66612TAlpha & Omega Semiconductor Inc.Description: 60V N-CHANNEL ALPHASGT
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerSMD, Flat Leads
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 48A (Ta), 100A (Tc)
Rds On (Max) @ Id, Vgs: 1.65mOhm @ 20A, 10V
Power Dissipation (Max): 7.5W (Ta), 250W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 250µA
Supplier Device Package: 8-DFN (5x6)
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 110 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 5300 pF @ 30 V
auf Bestellung 3000 Stücke:
Lieferzeit 10-14 Tag (e)
3000+2.86 EUR
Mindestbestellmenge: 3000 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
AONS66614Alpha & Omega Semiconductor60V N-Channel MOSFET
Produkt ist nicht verfügbar
 Mindestbestellmenge: 3000 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
AONS66614Alpha & Omega Semiconductor Inc.Description: N
Packaging: Cut Tape (CT)
Package / Case: 8-PowerSMD, Flat Leads
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 34.5A (Ta), 85A (Tc)
Rds On (Max) @ Id, Vgs: 2.9mOhm @ 20A, 10V
Power Dissipation (Max): 6.2W (Ta), 78W (Tc)
Vgs(th) (Max) @ Id: 2.4V @ 250µA
Supplier Device Package: 8-DFN (5x6)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 75 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3310 pF @ 30 V
auf Bestellung 2934 Stücke:
Lieferzeit 10-14 Tag (e)
5+4.71 EUR
10+2.95 EUR
25+2.49 EUR
100+1.98 EUR
250+1.71 EUR
500+1.56 EUR
1000+1.43 EUR
Mindestbestellmenge: 5 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
AONS66614Alpha & Omega Semiconductor Inc.Description: N
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerSMD, Flat Leads
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 34.5A (Ta), 85A (Tc)
Rds On (Max) @ Id, Vgs: 2.9mOhm @ 20A, 10V
Power Dissipation (Max): 6.2W (Ta), 78W (Tc)
Vgs(th) (Max) @ Id: 2.4V @ 250µA
Supplier Device Package: 8-DFN (5x6)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 75 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3310 pF @ 30 V
Produkt ist nicht verfügbar
 Mindestbestellmenge: 3000 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
AONS66615Alpha & Omega Semiconductor Inc.Description: N
Input Capacitance (Ciss) (Max) @ Vds: 2710 pF @ 30 V
Gate Charge (Qg) (Max) @ Vgs: 55 nC @ 10 V
Drain to Source Voltage (Vdss): 60 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 8V, 10V
Package / Case: 8-PowerSMD, Flat Leads
Packaging: Cut Tape (CT)
Supplier Device Package: 8-DFN (5x6)
Vgs(th) (Max) @ Id: 3.8V @ 250µA
Power Dissipation (Max): 6.2W (Ta), 78W (Tc)
Rds On (Max) @ Id, Vgs: 3.5mOhm @ 20A, 10V
Current - Continuous Drain (Id) @ 25°C: 31A (Ta), 85A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
auf Bestellung 2855 Stücke:
Lieferzeit 10-14 Tag (e)
7+3.42 EUR
10+2.17 EUR
25+1.83 EUR
100+1.46 EUR
250+1.29 EUR
500+1.17 EUR
1000+1.07 EUR
Mindestbestellmenge: 7 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
AONS66615Alpha & Omega Semiconductor60V N-Channel Power MOSFET
Produkt ist nicht verfügbar
 Mindestbestellmenge: 3000 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
AONS66615Alpha & Omega Semiconductor Inc.Description: N
Rds On (Max) @ Id, Vgs: 3.5mOhm @ 20A, 10V
Current - Continuous Drain (Id) @ 25°C: 31A (Ta), 85A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-PowerSMD, Flat Leads
Packaging: Tape & Reel (TR)
Input Capacitance (Ciss) (Max) @ Vds: 2710 pF @ 30 V
Gate Charge (Qg) (Max) @ Vgs: 55 nC @ 10 V
Drain to Source Voltage (Vdss): 60 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 8V, 10V
Supplier Device Package: 8-DFN (5x6)
Vgs(th) (Max) @ Id: 3.8V @ 250µA
Power Dissipation (Max): 6.2W (Ta), 78W (Tc)
Produkt ist nicht verfügbar
 Mindestbestellmenge: 3000 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
AONS66620Alpha & Omega Semiconductor Inc.Description: N
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerSMD, Flat Leads
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 17.5A (Ta), 24A (Tc)
Rds On (Max) @ Id, Vgs: 9mOhm @ 20A, 10V
Power Dissipation (Max): 5W (Ta), 36.5W (Tc)
Vgs(th) (Max) @ Id: 3.6V @ 250µA
Supplier Device Package: 8-DFN (5x6)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 8V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 25 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1070 pF @ 30 V
Produkt ist nicht verfügbar
 Mindestbestellmenge: 3000 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
AONS66620Alpha & Omega Semiconductor Inc.Description: N
Packaging: Cut Tape (CT)
Package / Case: 8-PowerSMD, Flat Leads
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 17.5A (Ta), 24A (Tc)
Rds On (Max) @ Id, Vgs: 9mOhm @ 20A, 10V
Power Dissipation (Max): 5W (Ta), 36.5W (Tc)
Vgs(th) (Max) @ Id: 3.6V @ 250µA
Supplier Device Package: 8-DFN (5x6)
Drive Voltage (Max Rds On, Min Rds On): 8V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 25 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1070 pF @ 30 V
auf Bestellung 2950 Stücke:
Lieferzeit 10-14 Tag (e)
7+3.17 EUR
11+2.01 EUR
25+1.7 EUR
100+1.36 EUR
250+1.18 EUR
500+1.07 EUR
1000+0.99 EUR
Mindestbestellmenge: 7 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
AONS66641Alpha & Omega Semiconductor Inc.Description: N
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerSMD, Flat Leads
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 47A (Ta), 275A (Tc)
Rds On (Max) @ Id, Vgs: 1.4mOhm @ 20A, 10V
Power Dissipation (Max): 6.2W (Ta), 208W (Tc)
Vgs(th) (Max) @ Id: 3.4V @ 250µA
Supplier Device Package: 8-DFN (5x6)
Drive Voltage (Max Rds On, Min Rds On): 8V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 110 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 5300 pF @ 30 V
Produkt ist nicht verfügbar
 Mindestbestellmenge: 3000 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
AONS66641ALPHA & OMEGA SEMICONDUCTORCategory: SMD N channel transistors
Description: Transistor: N-MOSFET; AlphaSGT™; unipolar; 60V; 275A; Idm: 400A; 83W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 275A
Power dissipation: 83W
Case: DFN8
Gate-source voltage: ±20V
On-state resistance: 1.4mΩ
Mounting: SMD
Gate charge: 78nC
Kind of channel: enhancement
Technology: AlphaSGT™
Kind of package: reel; tape
Pulsed drain current: 400A
Produkt ist nicht verfügbar
 Mindestbestellmenge: 3000 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
AONS66641Alpha & Omega Semiconductor60V N-Channel AlphaSGT
Produkt ist nicht verfügbar
 Mindestbestellmenge: 3000 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
AONS66641Alpha & Omega Semiconductor Inc.Description: N
Packaging: Cut Tape (CT)
Package / Case: 8-PowerSMD, Flat Leads
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 47A (Ta), 275A (Tc)
Rds On (Max) @ Id, Vgs: 1.4mOhm @ 20A, 10V
Power Dissipation (Max): 6.2W (Ta), 208W (Tc)
Vgs(th) (Max) @ Id: 3.4V @ 250µA
Supplier Device Package: 8-DFN (5x6)
Drive Voltage (Max Rds On, Min Rds On): 8V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 110 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 5300 pF @ 30 V
auf Bestellung 784 Stücke:
Lieferzeit 10-14 Tag (e)
4+5.84 EUR
10+3.8 EUR
25+3.26 EUR
100+2.65 EUR
250+2.36 EUR
500+2.18 EUR
Mindestbestellmenge: 4 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
AONS66641TALPHA & OMEGA SEMICONDUCTORCategory: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 325A; 325W; DFN8
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 325A
Power dissipation: 325W
Case: DFN8
Gate-source voltage: ±20V
On-state resistance: 1.4mΩ
Mounting: SMD
Gate charge: 78nC
Kind of channel: enhancement
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
AONS66811Alpha & Omega Semiconductor Inc.Description: N
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerSMD, Flat Leads
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 41A (Ta), 200A (Tc)
Rds On (Max) @ Id, Vgs: 2.5mOhm @ 20A, 8V
Power Dissipation (Max): 7.5W (Ta), 258W (Tc)
Vgs(th) (Max) @ Id: 3.8V @ 250µA
Supplier Device Package: 8-DFN (5x6)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 80 V
Gate Charge (Qg) (Max) @ Vgs: 110 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 5750 pF @ 40 V
Produkt ist nicht verfügbar
 Mindestbestellmenge: 3000 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
AONS66811ALPHA & OMEGA SEMICONDUCTORCategory: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 80V; 287A; Idm: 1148A; 182W; DFN5x6
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 80V
Drain current: 287A
Pulsed drain current: 1148A
Power dissipation: 182W
Case: DFN5x6
Gate-source voltage: ±20V
On-state resistance: 2.1mΩ
Mounting: SMD
Gate charge: 77nC
Kind of package: reel; tape
Kind of channel: enhancement
Produkt ist nicht verfügbar
 Mindestbestellmenge: 3000 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
AONS66811Alpha & Omega SemiconductorTrans MOSFET N-CH 80V 41A 8-Pin DFN EP T/R
Produkt ist nicht verfügbar
 Mindestbestellmenge: 3000 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
AONS66811Alpha & Omega Semiconductor Inc.Description: N
Packaging: Cut Tape (CT)
Package / Case: 8-PowerSMD, Flat Leads
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 41A (Ta), 200A (Tc)
Rds On (Max) @ Id, Vgs: 2.5mOhm @ 20A, 8V
Power Dissipation (Max): 7.5W (Ta), 258W (Tc)
Vgs(th) (Max) @ Id: 3.8V @ 250µA
Supplier Device Package: 8-DFN (5x6)
Drive Voltage (Max Rds On, Min Rds On): 5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 80 V
Gate Charge (Qg) (Max) @ Vgs: 110 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 5750 pF @ 40 V
auf Bestellung 2246 Stücke:
Lieferzeit 10-14 Tag (e)
3+7.28 EUR
10+4.77 EUR
100+3.34 EUR
500+2.77 EUR
Mindestbestellmenge: 3 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
AONS66814ALPHA & OMEGA SEMICONDUCTORCategory: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 80V; 220A; Idm: 880A; 125W; DFN5x6
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 80V
Drain current: 220A
Pulsed drain current: 880A
Power dissipation: 125W
Case: DFN5x6
Gate-source voltage: ±20V
On-state resistance: 2.4mΩ
Mounting: SMD
Gate charge: 66nC
Kind of package: reel; tape
Kind of channel: enhancement
Produkt ist nicht verfügbar
 Mindestbestellmenge: 3000 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
AONS66814Alpha & Omega SemiconductorMedium Voltage MOSFETs
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
AONS66814Alpha & Omega Semiconductor Inc.Description: LINEAR IC
Supplier Device Package: 8-DFN (5x6)
Vgs(th) (Max) @ Id: 3.8V @ 250µA
Power Dissipation (Max): 8.8W (Ta), 500W (Tc)
Rds On (Max) @ Id, Vgs: 2.4mOhm @ 20A, 10V
Current - Continuous Drain (Id) @ 25°C: 41A (Ta), 310A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-PowerSMD, Flat Leads
Packaging: Tape & Reel (TR)
Input Capacitance (Ciss) (Max) @ Vds: 5000 pF @ 40 V
Gate Charge (Qg) (Max) @ Vgs: 95 nC @ 10 V
Drain to Source Voltage (Vdss): 80 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 8V, 10V
Produkt ist nicht verfügbar
 Mindestbestellmenge: 3000 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
AONS66817Alpha & Omega Semiconductor Inc.Description: SINGLE
Input Capacitance (Ciss) (Max) @ Vds: 2860 pF @ 40 V
Gate Charge (Qg) (Max) @ Vgs: 54 nC @ 10 V
Drain to Source Voltage (Vdss): 80 V
Vgs (Max): ±20V
Supplier Device Package: 8-DFN (5x6)
Vgs(th) (Max) @ Id: 3.8V @ 250µA
Power Dissipation (Max): 6.2W (Ta), 113W (Tc)
Rds On (Max) @ Id, Vgs: 4.1mOhm @ 20A, 10V
Current - Continuous Drain (Id) @ 25°C: 28A (Ta), 120A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-PowerSMD, Flat Leads
Packaging: Tape & Reel (TR)
Drive Voltage (Max Rds On, Min Rds On): 8V, 10V
Part Status: Active
Produkt ist nicht verfügbar
 Mindestbestellmenge: 3000 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
AONS66817ALPHA & OMEGA SEMICONDUCTORCategory: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 80V; 120A; Idm: 210A; 45W; DFN5x6
Kind of package: reel; tape
Kind of channel: enhancement
Type of transistor: N-MOSFET
Mounting: SMD
Gate charge: 38nC
On-state resistance: 4.1mΩ
Gate-source voltage: ±20V
Power dissipation: 45W
Drain-source voltage: 80V
Drain current: 120A
Pulsed drain current: 210A
Polarisation: unipolar
Case: DFN5x6
Produkt ist nicht verfügbar
 Mindestbestellmenge: 3000 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
AONS66908Alpha & Omega SemiconductorMedium Voltage MOSFETs (40V - 400V)
auf Bestellung 722 Stücke:
Lieferzeit 14-21 Tag (e)
105+1.67 EUR
114+1.51 EUR
115+1.46 EUR
129+1.27 EUR
250+1.17 EUR
500+0.99 EUR
Mindestbestellmenge: 105 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
AONS66908Alpha & Omega SemiconductorMedium Voltage MOSFETs (40V - 400V)
Produkt ist nicht verfügbar
 Mindestbestellmenge: 3000 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
AONS66908Alpha & Omega Semiconductor Inc.Description: MOSFET N-CH 100V 158A 8DFN
Input Capacitance (Ciss) (Max) @ Vds: 5117 pF @ 50 V
Gate Charge (Qg) (Max) @ Vgs: 97 nC @ 10 V
Drain to Source Voltage (Vdss): 100 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Supplier Device Package: 8-DFN (5x6)
Vgs(th) (Max) @ Id: 2.6V @ 250µA
Power Dissipation (Max): 7.3W (Ta), 208W (Tc)
Rds On (Max) @ Id, Vgs: 4.2mOhm @ 20A, 10V
Current - Continuous Drain (Id) @ 25°C: 30A (Ta), 158A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-PowerSMD, Flat Leads
Packaging: Cut Tape (CT)
auf Bestellung 1000 Stücke:
Lieferzeit 10-14 Tag (e)
5+4.69 EUR
10+3.01 EUR
100+2.05 EUR
500+1.64 EUR
1000+1.51 EUR
Mindestbestellmenge: 5 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
AONS66908Alpha & Omega SemiconductorMedium Voltage MOSFETs (40V - 400V)
auf Bestellung 722 Stücke:
Lieferzeit 14-21 Tag (e)
88+2 EUR
105+1.61 EUR
114+1.42 EUR
115+1.36 EUR
129+1.15 EUR
250+1.02 EUR
500+0.86 EUR
Mindestbestellmenge: 88 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
AONS66908Alpha & Omega Semiconductor Inc.Description: MOSFET N-CH 100V 158A 8DFN
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerSMD, Flat Leads
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 30A (Ta), 158A (Tc)
Rds On (Max) @ Id, Vgs: 4.2mOhm @ 20A, 10V
Power Dissipation (Max): 7.3W (Ta), 208W (Tc)
Vgs(th) (Max) @ Id: 2.6V @ 250µA
Supplier Device Package: 8-DFN (5x6)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 97 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 5117 pF @ 50 V
Produkt ist nicht verfügbar
 Mindestbestellmenge: 3000 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
AONS66909Alpha & Omega Semiconductor100V N-Channel AlphaSGT
Produkt ist nicht verfügbar
 Mindestbestellmenge: 3000 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
AONS66909Alpha & Omega Semiconductor Inc.Description: N
Input Capacitance (Ciss) (Max) @ Vds: 4100 pF @ 50 V
Gate Charge (Qg) (Max) @ Vgs: 75 nC @ 10 V
Drain to Source Voltage (Vdss): 100 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 8V, 10V
Part Status: Active
Supplier Device Package: 8-DFN (5x6)
Vgs(th) (Max) @ Id: 3.7V @ 250µA
Power Dissipation (Max): 7.3W (Ta), 208W (Tc)
Rds On (Max) @ Id, Vgs: 4.2mOhm @ 20A, 10V
Current - Continuous Drain (Id) @ 25°C: 30A (Ta), 160A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-PowerSMD, Flat Leads
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar
 Mindestbestellmenge: 3000 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
AONS66916Alpha & Omega Semiconductor Inc.Description: N
Package / Case: 8-PowerSMD, Flat Leads
Packaging: Cut Tape (CT)
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Supplier Device Package: 8-DFN (5x6)
Vgs(th) (Max) @ Id: 3.6V @ 250µA
Power Dissipation (Max): 215W (Tc)
Rds On (Max) @ Id, Vgs: 3.6mOhm @ 20A, 10V
Current - Continuous Drain (Id) @ 25°C: 100A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Input Capacitance (Ciss) (Max) @ Vds: 5325 pF @ 50 V
Gate Charge (Qg) (Max) @ Vgs: 95 nC @ 10 V
Drain to Source Voltage (Vdss): 100 V
Vgs (Max): ±20V
auf Bestellung 956 Stücke:
Lieferzeit 10-14 Tag (e)
3+7.98 EUR
10+5.28 EUR
100+3.74 EUR
500+3.44 EUR
Mindestbestellmenge: 3 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
AONS66916ALPHA & OMEGA SEMICONDUCTORCategory: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 100A; 86W; DFN5x6
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 100A
Power dissipation: 86W
Case: DFN5x6
Gate-source voltage: ±20V
On-state resistance: 3.6mΩ
Mounting: SMD
Gate charge: 67nC
Kind of channel: enhancement
Produkt ist nicht verfügbar
 Mindestbestellmenge: 3000 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
Wählen Sie Seite:   [  << Vorherige Seite ]  1 2 3 4 5 6 7 8 9 10 11 12 13 14  [ Nächste Seite >> ]