Produkte > IPD
| Bezeichnung | Hersteller | Beschreibung | Verfügbarkeit | Privatkunde | ||||||||||||||||
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| IPD220N06L3GATMA1 | Infineon Technologies | MOSFETs IFX FET 60V | auf Bestellung 139 Stücke: Lieferzeit 10-14 Tag (e) |
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| IPD220N06L3GBTMA1 | Infineon Technologies | Trans MOSFET N-CH 60V 30A 3-Pin(2+Tab) DPAK T/R | Produkt ist nicht verfügbar | Mindestbestellmenge: 2500 Stücke Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||||
| IPD220N06L3GBTMA1 | Infineon | MOSFET N-CH 60V 30A TO252-3 Транзистори | Produkt ist nicht verfügbar | Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||||
| IPD220N06L3GBTMA1 | Infineon Technologies | Trans MOSFET N-CH 60V 30A 3-Pin(2+Tab) DPAK T/R | auf Bestellung 2 Stücke: Lieferzeit 14-21 Tag (e) | Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||||
| IPD220N06L3GBTMA1 | Infineon Technologies | Description: MOSFET N-CH 60V 30A TO252-3 Packaging: Tape & Reel (TR) Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 30A (Tc) Rds On (Max) @ Id, Vgs: 22mOhm @ 30A, 10V Power Dissipation (Max): 36W (Tc) Vgs(th) (Max) @ Id: 2.2V @ 11µA Supplier Device Package: PG-TO252-3 Part Status: Obsolete Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 60 V Gate Charge (Qg) (Max) @ Vgs: 10 nC @ 4.5 V Input Capacitance (Ciss) (Max) @ Vds: 1600 pF @ 30 V | Produkt ist nicht verfügbar | Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||||
| IPD22N08S2L-50 | Infineon Technologies | MOSFETs N-Ch 75V 22A DPAK-2 OptiMOS | auf Bestellung 4804 Stücke: Lieferzeit 10-14 Tag (e) |
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| IPD22N08S2L50ATMA1 | Infineon Technologies | Description: MOSFET N-CH 75V 27A TO252-3 Packaging: Cut Tape (CT) Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 27A (Tc) Rds On (Max) @ Id, Vgs: 50mOhm @ 50A, 10V Power Dissipation (Max): 75W (Tc) Vgs(th) (Max) @ Id: 2V @ 31µA Supplier Device Package: PG-TO252-3-11 Drive Voltage (Max Rds On, Min Rds On): 5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 75 V Gate Charge (Qg) (Max) @ Vgs: 33 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 630 pF @ 25 V | auf Bestellung 9994 Stücke: Lieferzeit 10-14 Tag (e) |
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| IPD22N08S2L50ATMA1 | Infineon Technologies | Trans MOSFET N-CH 75V 27A 3-Pin(2+Tab) DPAK T/R Automotive AEC-Q101 | auf Bestellung 1306 Stücke: Lieferzeit 14-21 Tag (e) |
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| IPD22N08S2L50ATMA1 | Infineon Technologies | Trans MOSFET N-CH 75V 27A 3-Pin(2+Tab) DPAK T/R Automotive AEC-Q101 | auf Bestellung 5000 Stücke: Lieferzeit 14-21 Tag (e) |
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| IPD22N08S2L50ATMA1 | Infineon Technologies | Trans MOSFET N-CH 75V 27A 3-Pin(2+Tab) DPAK T/R Automotive AEC-Q101 | auf Bestellung 1306 Stücke: Lieferzeit 14-21 Tag (e) |
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| IPD22N08S2L50ATMA1 | Infineon Technologies | Description: MOSFET N-CH 75V 27A TO252-3 Packaging: Tape & Reel (TR) Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 27A (Tc) Rds On (Max) @ Id, Vgs: 50mOhm @ 50A, 10V Power Dissipation (Max): 75W (Tc) Vgs(th) (Max) @ Id: 2V @ 31µA Supplier Device Package: PG-TO252-3-11 Drive Voltage (Max Rds On, Min Rds On): 5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 75 V Gate Charge (Qg) (Max) @ Vgs: 33 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 630 pF @ 25 V | auf Bestellung 7500 Stücke: Lieferzeit 10-14 Tag (e) |
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| IPD22N08S2L50ATMA1 | INFINEON | Description: INFINEON - IPD22N08S2L50ATMA1 - Leistungs-MOSFET, n-Kanal, 75 V, 27 A, 0.0385 ohm, TO-252 (DPAK), Oberflächenmontage tariffCode: 85412900 Transistormontage: Oberflächenmontage Drain-Source-Spannung Vds: 75V rohsCompliant: YES Dauer-Drainstrom Id: 27A hazardous: false rohsPhthalatesCompliant: YES Qualifikation: AEC-Q101 MSL: - usEccn: EAR99 Gate-Source-Schwellenspannung, max.: 1.6V euEccn: NLR Verlustleistung: 75W Bauform - Transistor: TO-252 (DPAK) Anzahl der Pins: 3Pin(s) Produktpalette: OptiMOS productTraceability: Yes-Date/Lot Code Kanaltyp: n-Kanal Rds(on)-Prüfspannung: 10V Betriebstemperatur, max.: 175°C Drain-Source-Durchgangswiderstand: 0.0385ohm SVHC: No SVHC (27-Jun-2018) | auf Bestellung 5989 Stücke: Lieferzeit 14-21 Tag (e) |
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| IPD22N08S2L50ATMA1 | Infineon Technologies | Trans MOSFET N-CH 75V 27A 3-Pin(2+Tab) DPAK T/R Automotive AEC-Q101 | auf Bestellung 10000 Stücke: Lieferzeit 14-21 Tag (e) |
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| IPD22N08S2L50ATMA1 | Infineon Technologies | Trans MOSFET N-CH 75V 27A 3-Pin(2+Tab) DPAK T/R Automotive AEC-Q101 | auf Bestellung 5000 Stücke: Lieferzeit 14-21 Tag (e) |
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| IPD22N08S2L50ATMA1 | Infineon Technologies | Trans MOSFET N-CH 75V 27A 3-Pin(2+Tab) DPAK T/R Automotive AEC-Q101 | auf Bestellung 10000 Stücke: Lieferzeit 14-21 Tag (e) |
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| IPD22N08S2L50ATMA1 | INFINEON | Description: INFINEON - IPD22N08S2L50ATMA1 - Leistungs-MOSFET, n-Kanal, 75 V, 27 A, 0.05 ohm, TO-252 (DPAK), Oberflächenmontage tariffCode: 85412900 Transistormontage: Oberflächenmontage Drain-Source-Spannung Vds: 75V rohsCompliant: YES Dauer-Drainstrom Id: 27A hazardous: false rohsPhthalatesCompliant: YES Qualifikation: AEC-Q101 MSL: - usEccn: EAR99 Gate-Source-Schwellenspannung, max.: 1.6V euEccn: NLR Verlustleistung: 75W Bauform - Transistor: TO-252 (DPAK) Anzahl der Pins: 3Pin(s) Produktpalette: OptiMOS productTraceability: Yes-Date/Lot Code Kanaltyp: n-Kanal Rds(on)-Prüfspannung: 10V Betriebstemperatur, max.: 175°C Drain-Source-Durchgangswiderstand: 0.05ohm SVHC: No SVHC (21-Jan-2025) | auf Bestellung 1264 Stücke: Lieferzeit 14-21 Tag (e) |
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| IPD22N08S2L50ATMA1 | Infineon Technologies | Trans MOSFET N-CH 75V 27A 3-Pin(2+Tab) DPAK T/R Automotive AEC-Q101 | auf Bestellung 1720 Stücke: Lieferzeit 14-21 Tag (e) |
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| IPD230N06LG | Infineon Technologies | Description: N-CHANNEL POWER MOSFET Current - Continuous Drain (Id) @ 25°C: 30A (Tc) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Mounting Type: Surface Mount Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Packaging: Bulk Input Capacitance (Ciss) (Max) @ Vds: 1500 pF @ 30 V Gate Charge (Qg) (Max) @ Vgs: 42 nC @ 10 V Drain to Source Voltage (Vdss): 60 V Part Status: Active Supplier Device Package: PG-TO252-3 Vgs(th) (Max) @ Id: 2V @ 49µA Rds On (Max) @ Id, Vgs: 23mOhm @ 30A, 10V | Produkt ist nicht verfügbar | Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||||
| IPD230N06LG | infineon | 07+ to-252/d-pak | auf Bestellung 30000 Stücke: Lieferzeit 21-28 Tag (e) | Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||||
| IPD230N06NG | infineon | 07+ to-252/d-pak | auf Bestellung 30000 Stücke: Lieferzeit 21-28 Tag (e) | Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||||
| IPD230N06NGBTMA1 | Infineon Technologies | Description: MOSFET N-CH 60V 30A TO252-3 Packaging: Tape & Reel (TR) Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 30A (Tc) Rds On (Max) @ Id, Vgs: 23mOhm @ 30A, 10V Power Dissipation (Max): 100W (Tc) Vgs(th) (Max) @ Id: 4V @ 50µA Supplier Device Package: PG-TO252-3 Part Status: Obsolete Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 60 V Gate Charge (Qg) (Max) @ Vgs: 31 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1100 pF @ 30 V | Produkt ist nicht verfügbar | Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||||
| IPD2434481074 | TE Connectivity | Description: TE Connectivity IPD2434481074 Part Status: Active Packaging: Bulk | auf Bestellung 1250 Stücke: Lieferzeit 10-14 Tag (e) |
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| IPD250N06N3 GCT-ND Produktcode: 81287
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Lieblingsprodukt
| Transistoren > MOSFET N-CH | Produkt ist nicht verfügbar
| Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||||
| IPD250N06N3GBTMA1 | Infineon Technologies | Description: MOSFET N-CH 60V 28A TO252-3 Packaging: Tape & Reel (TR) Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 28A (Tc) Rds On (Max) @ Id, Vgs: 25mOhm @ 28A, 10V Power Dissipation (Max): 36W (Tc) Vgs(th) (Max) @ Id: 4V @ 11µA Supplier Device Package: PG-TO252-3 Part Status: Obsolete Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 60 V Gate Charge (Qg) (Max) @ Vgs: 15 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1200 pF @ 30 V | Produkt ist nicht verfügbar | Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||||
| IPD25CN10N G | Infineon | auf Bestellung 204500 Stücke: Lieferzeit 21-28 Tag (e) | Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||||
| IPD25CN10NG | infineon | 07+ to-252/d-pak | auf Bestellung 30000 Stücke: Lieferzeit 21-28 Tag (e) | Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||||
| IPD25CN10NGATMA1 | Infineon Technologies | MOSFETs IFX FET >80 - 100V | auf Bestellung 14031 Stücke: Lieferzeit 10-14 Tag (e) |
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| IPD25CN10NGATMA1 | Infineon Technologies | Description: MOSFET N-CH 100V 35A TO252-3 Packaging: Tape & Reel (TR) Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 35A (Tc) Rds On (Max) @ Id, Vgs: 25mOhm @ 35A, 10V Power Dissipation (Max): 71W (Tc) Vgs(th) (Max) @ Id: 4V @ 39µA Supplier Device Package: PG-TO252-3 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 100 V Gate Charge (Qg) (Max) @ Vgs: 31 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 2070 pF @ 50 V | Produkt ist nicht verfügbar | Mindestbestellmenge: 2500 Stücke Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||||
| IPD25CN10NGATMA1 | Infineon Technologies | Trans MOSFET N-CH 100V 35A 3-Pin(2+Tab) DPAK T/R | auf Bestellung 5000 Stücke: Lieferzeit 14-21 Tag (e) |
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| IPD25CN10NGATMA1 | Infineon Technologies | Trans MOSFET N-CH 100V 35A 3-Pin(2+Tab) DPAK T/R | auf Bestellung 5000 Stücke: Lieferzeit 14-21 Tag (e) |
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| IPD25CN10NGATMA1 | INFINEON | Description: INFINEON - IPD25CN10NGATMA1 - Leistungs-MOSFET, n-Kanal, 100 V, 35 A, 0.025 ohm, TO-252 (DPAK), Oberflächenmontage tariffCode: 85412900 Transistormontage: Oberflächenmontage euEccn: NLR Drain-Source-Spannung Vds: 100V rohsCompliant: YES Dauer-Drainstrom Id: 35A hazardous: false rohsPhthalatesCompliant: YES Qualifikation: - isCanonical: Y MSL: MSL 3 - 168 Stunden Gate-Source-Schwellenspannung, max.: 3V Verlustleistung: 71W SVHC: No SVHC (25-Jun-2025) Bauform - Transistor: TO-252 (DPAK) Anzahl der Pins: 3Pin(s) Produktpalette: - productTraceability: Yes-Date/Lot Code usEccn: EAR99 Kanaltyp: n-Kanal Betriebstemperatur, max.: 175°C Rds(on)-Prüfspannung: 10V Drain-Source-Durchgangswiderstand: 0.025ohm | auf Bestellung 2005 Stücke: Lieferzeit 14-21 Tag (e) |
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| IPD25CN10NGATMA1 | Infineon Technologies | Trans MOSFET N-CH 100V 35A 3-Pin(2+Tab) DPAK T/R | auf Bestellung 177500 Stücke: Lieferzeit 14-21 Tag (e) |
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| IPD25CN10NGATMA1 | Infineon Technologies | Trans MOSFET N-CH 100V 35A 3-Pin(2+Tab) DPAK T/R | auf Bestellung 35000 Stücke: Lieferzeit 14-21 Tag (e) |
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| IPD25CN10NGATMA1 | Infineon Technologies | Trans MOSFET N-CH 100V 35A 3-Pin(2+Tab) DPAK T/R | auf Bestellung 6777 Stücke: Lieferzeit 14-21 Tag (e) |
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| IPD25CN10NGATMA1 | Infineon Technologies | Trans MOSFET N-CH 100V 35A 3-Pin(2+Tab) DPAK T/R | auf Bestellung 4002 Stücke: Lieferzeit 14-21 Tag (e) |
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| IPD25CN10NGATMA1 | Infineon Technologies | Description: MOSFET N-CH 100V 35A TO252-3 Packaging: Cut Tape (CT) Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 35A (Tc) Rds On (Max) @ Id, Vgs: 25mOhm @ 35A, 10V Power Dissipation (Max): 71W (Tc) Vgs(th) (Max) @ Id: 4V @ 39µA Supplier Device Package: PG-TO252-3 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 100 V Gate Charge (Qg) (Max) @ Vgs: 31 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 2070 pF @ 50 V | auf Bestellung 1268 Stücke: Lieferzeit 10-14 Tag (e) |
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| IPD25CN10NGATMA1 | Infineon Technologies | Trans MOSFET N-CH 100V 35A 3-Pin(2+Tab) DPAK T/R | auf Bestellung 6777 Stücke: Lieferzeit 14-21 Tag (e) |
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| IPD25CN10NGATMA1 | Infineon Technologies | Trans MOSFET N-CH 100V 35A 3-Pin(2+Tab) DPAK T/R | auf Bestellung 35000 Stücke: Lieferzeit 14-21 Tag (e) |
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| IPD25CN10NGATMA1 | Infineon Technologies | Trans MOSFET N-CH 100V 35A 3-Pin(2+Tab) DPAK T/R | auf Bestellung 1815 Stücke: Lieferzeit 14-21 Tag (e) |
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| IPD25CN10NGBUMA1 | Infineon Technologies | Description: MOSFET N-CH 100V 35A TO252-3 Packaging: Tape & Reel (TR) Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 35A (Tc) Rds On (Max) @ Id, Vgs: 25mOhm @ 35A, 10V Power Dissipation (Max): 71W (Tc) Vgs(th) (Max) @ Id: 4V @ 39µA Supplier Device Package: PG-TO252-3 Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 100 V Gate Charge (Qg) (Max) @ Vgs: 31 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 2070 pF @ 50 V | Produkt ist nicht verfügbar | Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||||
| IPD25CN10NGBUMA1 | Infineon Technologies | Description: MOSFET N-CH 100V 35A TO252-3 Packaging: Cut Tape (CT) Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 35A (Tc) Rds On (Max) @ Id, Vgs: 25mOhm @ 35A, 10V Power Dissipation (Max): 71W (Tc) Vgs(th) (Max) @ Id: 4V @ 39µA Supplier Device Package: PG-TO252-3 Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 100 V Gate Charge (Qg) (Max) @ Vgs: 31 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 2070 pF @ 50 V | Produkt ist nicht verfügbar | Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||||
| IPD25CNE8N G | Infineon Technologies | Description: MOSFET N-CH 85V 35A TO252-3 | Produkt ist nicht verfügbar | Mindestbestellmenge: 2500 Stücke Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||||
| IPD25CNE8NG | infineon | 07+ to-252/d-pak | auf Bestellung 30000 Stücke: Lieferzeit 21-28 Tag (e) | Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||||
| IPD25DP06LMATMA1 | Infineon Technologies | Description: MOSFET P-CH 60V 6.5A TO252-3 Vgs(th) (Max) @ Id: 2V @ 270µA Power Dissipation (Max): 28W (Tc) Rds On (Max) @ Id, Vgs: 250mOhm @ 6.5A, 10V Current - Continuous Drain (Id) @ 25°C: 6.5A (Tc) FET Type: P-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Packaging: Tape & Reel (TR) Input Capacitance (Ciss) (Max) @ Vds: 420 pF @ 30 V Gate Charge (Qg) (Max) @ Vgs: 13.8 nC @ 10 V Drain to Source Voltage (Vdss): 60 V Vgs (Max): ±20V Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Supplier Device Package: PG-TO252-3-313 | Produkt ist nicht verfügbar | Mindestbestellmenge: 2500 Stücke Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||||
| IPD25DP06LMATMA1 | Infineon Technologies | Description: MOSFET P-CH 60V 6.5A TO252-3 Input Capacitance (Ciss) (Max) @ Vds: 420 pF @ 30 V Gate Charge (Qg) (Max) @ Vgs: 13.8 nC @ 10 V Packaging: Cut Tape (CT) Rds On (Max) @ Id, Vgs: 250mOhm @ 6.5A, 10V Current - Continuous Drain (Id) @ 25°C: 6.5A (Tc) FET Type: P-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Drain to Source Voltage (Vdss): 60 V Vgs (Max): ±20V Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Supplier Device Package: PG-TO252-3-313 Vgs(th) (Max) @ Id: 2V @ 270µA Power Dissipation (Max): 28W (Tc) | Produkt ist nicht verfügbar | Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||||
| IPD25DP06LMATMA1 | Infineon Technologies | MOSFET TRENCH 40<-<100V | auf Bestellung 2377 Stücke: Lieferzeit 10-14 Tag (e) |
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| IPD25DP06LMATMA1 | INFINEON | Description: INFINEON - IPD25DP06LMATMA1 - Leistungs-MOSFET, p-Kanal, 60 V, 6.5 A, 0.187 ohm, TO-252 (DPAK), Oberflächenmontage tariffCode: 85412900 Transistormontage: Oberflächenmontage Drain-Source-Spannung Vds: 60V rohsCompliant: YES Dauer-Drainstrom Id: 6.5A hazardous: false rohsPhthalatesCompliant: YES Qualifikation: - isCanonical: Y MSL: MSL 1 - unbegrenzt usEccn: EAR99 Gate-Source-Schwellenspannung, max.: 1.5V euEccn: NLR Verlustleistung: 28W Bauform - Transistor: TO-252 (DPAK) Anzahl der Pins: 3Pin(s) Produktpalette: OptiMOS productTraceability: No Kanaltyp: p-Kanal Rds(on)-Prüfspannung: 10V Betriebstemperatur, max.: 175°C Drain-Source-Durchgangswiderstand: 0.187ohm SVHC: No SVHC (27-Jun-2018) | auf Bestellung 2268 Stücke: Lieferzeit 14-21 Tag (e) |
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| IPD25DP06NMATMA1 | Infineon Technologies | Description: MOSFET P-CH 60V 6.5A TO252-3 Packaging: Tape & Reel (TR) Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 6.5A (Tc) Rds On (Max) @ Id, Vgs: 250mOhm @ 6.5A, 10V Power Dissipation (Max): 28W (Tc) Vgs(th) (Max) @ Id: 4V @ 270µA Supplier Device Package: PG-TO252-3-313 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 60 V Gate Charge (Qg) (Max) @ Vgs: 10.6 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 420 pF @ 30 V | Produkt ist nicht verfügbar | Mindestbestellmenge: 2500 Stücke Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||||
| IPD25DP06NMATMA1 | Infineon Technologies | MOSFETs IFX FET > 60-80V | auf Bestellung 1986 Stücke: Lieferzeit 10-14 Tag (e) |
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| IPD25DP06NMATMA1 | Infineon Technologies | Description: MOSFET P-CH 60V 6.5A TO252-3 Packaging: Cut Tape (CT) Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 6.5A (Tc) Rds On (Max) @ Id, Vgs: 250mOhm @ 6.5A, 10V Power Dissipation (Max): 28W (Tc) Vgs(th) (Max) @ Id: 4V @ 270µA Supplier Device Package: PG-TO252-3-313 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 60 V Gate Charge (Qg) (Max) @ Vgs: 10.6 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 420 pF @ 30 V | auf Bestellung 595 Stücke: Lieferzeit 10-14 Tag (e) |
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| IPD25N06S2-40 | INFINEON | auf Bestellung 3000 Stücke: Lieferzeit 21-28 Tag (e) | Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||||
| IPD25N06S2-40 | Infineon Technologies | MOSFET N-Ch 55V 29A DPAK-2 OptiMOS | auf Bestellung 2546 Stücke: Lieferzeit 10-14 Tag (e) | Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||||
| IPD25N06S2-40ATMA1 | Infineon Technologies | Description: IPD25N06 - 55V-60V N-CHANNEL AUT Packaging: Bulk Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 29A (Tc) Rds On (Max) @ Id, Vgs: 40mOhm @ 13A, 10V Power Dissipation (Max): 68W (Tc) Vgs(th) (Max) @ Id: 4V @ 26µA Supplier Device Package: PG-TO252-3-11 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 55 V Gate Charge (Qg) (Max) @ Vgs: 18 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 513 pF @ 25 V | Produkt ist nicht verfügbar | Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||||
| IPD25N06S240ATMA1 | Infineon Technologies | Description: MOSFET N-CH 55V 29A TO252-3 Packaging: Tape & Reel (TR) Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 29A (Tc) Rds On (Max) @ Id, Vgs: 40mOhm @ 13A, 10V Power Dissipation (Max): 68W (Tc) Vgs(th) (Max) @ Id: 4V @ 26µA Supplier Device Package: PG-TO252-3-11 Part Status: Discontinued at Digi-Key Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 55 V Gate Charge (Qg) (Max) @ Vgs: 18 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 513 pF @ 25 V | Produkt ist nicht verfügbar | Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||||
| IPD25N06S240ATMA2 | Infineon Technologies | Description: MOSFET N-CH 55V 29A TO252-31 Packaging: Cut Tape (CT) Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 29A (Tc) Rds On (Max) @ Id, Vgs: 40mOhm @ 13A, 10V Power Dissipation (Max): 68W (Tc) Vgs(th) (Max) @ Id: 4V @ 26µA Supplier Device Package: PG-TO252-3-11 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 55 V Gate Charge (Qg) (Max) @ Vgs: 18 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 513 pF @ 25 V Grade: Automotive Qualification: AEC-Q101 | auf Bestellung 2414 Stücke: Lieferzeit 10-14 Tag (e) |
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| IPD25N06S240ATMA2 | Infineon Technologies | MOSFETs MOSFET_)40V 60V) | auf Bestellung 1933 Stücke: Lieferzeit 10-14 Tag (e) |
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| IPD25N06S240ATMA2 | Infineon Technologies | Description: MOSFET N-CH 55V 29A TO252-31 Packaging: Tape & Reel (TR) Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 29A (Tc) Rds On (Max) @ Id, Vgs: 40mOhm @ 13A, 10V Power Dissipation (Max): 68W (Tc) Vgs(th) (Max) @ Id: 4V @ 26µA Supplier Device Package: PG-TO252-3-11 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 55 V Gate Charge (Qg) (Max) @ Vgs: 18 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 513 pF @ 25 V Grade: Automotive Qualification: AEC-Q101 | Produkt ist nicht verfügbar | Mindestbestellmenge: 2500 Stücke Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||||
| IPD25N06S240ATMA2 | INFINEON TECHNOLOGIES | Category: SMD N channel transistors Description: Transistor: N-MOSFET Type of transistor: N-MOSFET | Produkt ist nicht verfügbar | Mindestbestellmenge: 2500 Stücke Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||||
| IPD25N06S4L-30ATMA2 | Infineon Technologies | Description: IPD25N06 - 55V-60V N-CHANNEL AUT Packaging: Bulk Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 25A (Tc) Rds On (Max) @ Id, Vgs: 30mOhm @ 25A, 10V Power Dissipation (Max): 29W (Tc) Vgs(th) (Max) @ Id: 2.2V @ 8µA Supplier Device Package: PG-TO252-3-11 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±16V Drain to Source Voltage (Vdss): 60 V Gate Charge (Qg) (Max) @ Vgs: 16.3 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1220 pF @ 25 V | Produkt ist nicht verfügbar | Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||||
| IPD25N06S4L30ATMA1 | Infineon Technologies | Description: MOSFET N-CH 60V 25A TO252-31 Packaging: Tape & Reel (TR) Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 25A (Tc) Rds On (Max) @ Id, Vgs: 30mOhm @ 25A, 10V Power Dissipation (Max): 29W (Tc) Vgs(th) (Max) @ Id: 2.2V @ 8µA Supplier Device Package: PG-TO252-3-11 Grade: Automotive Part Status: Discontinued at Digi-Key Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±16V Drain to Source Voltage (Vdss): 60 V Gate Charge (Qg) (Max) @ Vgs: 16.3 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1220 pF @ 25 V Qualification: AEC-Q101 | Produkt ist nicht verfügbar | Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||||
| IPD25N06S4L30ATMA2 | Infineon Technologies | MOSFETs MOSFET | auf Bestellung 23507 Stücke: Lieferzeit 10-14 Tag (e) |
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| IPD25N06S4L30ATMA2 | Infineon Technologies | Trans MOSFET N-CH 60V 25A 3-Pin(2+Tab) DPAK T/R Automotive AEC-Q101 | auf Bestellung 2323 Stücke: Lieferzeit 14-21 Tag (e) |
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| IPD25N06S4L30ATMA2 | Infineon Technologies | Trans MOSFET N-CH 60V 25A 3-Pin(2+Tab) DPAK T/R Automotive AEC-Q101 | Produkt ist nicht verfügbar | Mindestbestellmenge: 2500 Stücke Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||||
| IPD25N06S4L30ATMA2 | Infineon | MOSFET N-CH 60V 25A TO252-31 Транзистори | Produkt ist nicht verfügbar | Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||||
| IPD25N06S4L30ATMA2 | Infineon Technologies | Trans MOSFET N-CH 60V 25A 3-Pin(2+Tab) DPAK T/R Automotive AEC-Q101 | auf Bestellung 5327 Stücke: Lieferzeit 14-21 Tag (e) |
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| IPD25N06S4L30ATMA2 | INFINEON | Description: INFINEON - IPD25N06S4L30ATMA2 - Leistungs-MOSFET, n-Kanal, 60 V, 25 A, 0.03 ohm, TO-252 (DPAK), Oberflächenmontage tariffCode: 85412900 Transistormontage: Oberflächenmontage Drain-Source-Spannung Vds: 60V rohsCompliant: YES Dauer-Drainstrom Id: 25A hazardous: false rohsPhthalatesCompliant: YES Qualifikation: AEC-Q101 isCanonical: Y MSL: MSL 1 - unbegrenzt usEccn: EAR99 Gate-Source-Schwellenspannung, max.: 1.7V euEccn: NLR Verlustleistung: 29W Bauform - Transistor: TO-252 (DPAK) Anzahl der Pins: 3Pin(s) Produktpalette: OptiMOS T2 productTraceability: Yes-Date/Lot Code Kanaltyp: n-Kanal Rds(on)-Prüfspannung: 10V Betriebstemperatur, max.: 175°C Drain-Source-Durchgangswiderstand: 0.03ohm SVHC: No SVHC (25-Jun-2025) | auf Bestellung 2904 Stücke: Lieferzeit 14-21 Tag (e) |
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| IPD25N06S4L30ATMA2 | Infineon Technologies | Trans MOSFET N-CH 60V 25A 3-Pin(2+Tab) DPAK T/R Automotive AEC-Q101 | auf Bestellung 36407 Stücke: Lieferzeit 14-21 Tag (e) |
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| IPD25N06S4L30ATMA2 Produktcode: 209229
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Lieblingsprodukt
| Transistoren > MOSFET N-CH | Produkt ist nicht verfügbar
| Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||||
| IPD25N06S4L30ATMA2 | Infineon Technologies | Description: MOSFET N-CH 60V 25A TO252-31 Packaging: Cut Tape (CT) Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 25A (Tc) Rds On (Max) @ Id, Vgs: 30mOhm @ 25A, 10V Power Dissipation (Max): 29W (Tc) Vgs(th) (Max) @ Id: 2.2V @ 8µA Supplier Device Package: PG-TO252-3-11 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±16V Drain to Source Voltage (Vdss): 60 V Gate Charge (Qg) (Max) @ Vgs: 16.3 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1220 pF @ 25 V Grade: Automotive Qualification: AEC-Q101 | auf Bestellung 11189 Stücke: Lieferzeit 10-14 Tag (e) |
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| IPD25N06S4L30ATMA2 | INFINEON TECHNOLOGIES | Category: SMD N channel transistors Description: Transistor: N-MOSFET; OptiMOS® -T2; unipolar; 60V; 17A; Idm: 92A Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 60V Drain current: 17A Pulsed drain current: 92A Power dissipation: 29W Case: PG-TO252-3-11 Gate-source voltage: ±16V On-state resistance: 30mΩ Mounting: SMD Kind of channel: enhancement Technology: OptiMOS® -T2 | Produkt ist nicht verfügbar | Mindestbestellmenge: 2500 Stücke Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||||
| IPD25N06S4L30ATMA2 | Infineon Technologies | Trans MOSFET N-CH 60V 25A 3-Pin(2+Tab) DPAK T/R Automotive AEC-Q101 | auf Bestellung 160304 Stücke: Lieferzeit 14-21 Tag (e) |
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| IPD25N06S4L30ATMA2 | Infineon Technologies | Trans MOSFET N-CH 60V 25A 3-Pin(2+Tab) DPAK T/R Automotive AEC-Q101 | auf Bestellung 1258 Stücke: Lieferzeit 14-21 Tag (e) |
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| IPD25N06S4L30ATMA2 | Infineon Technologies | Trans MOSFET N-CH 60V 25A 3-Pin(2+Tab) DPAK T/R Automotive AEC-Q101 | auf Bestellung 1258 Stücke: Lieferzeit 14-21 Tag (e) |
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| IPD25N06S4L30ATMA2 | INFINEON | Description: INFINEON - IPD25N06S4L30ATMA2 - Leistungs-MOSFET, n-Kanal, 60 V, 25 A, 0.03 ohm, TO-252 (DPAK), Oberflächenmontage tariffCode: 85412900 Transistormontage: Oberflächenmontage Drain-Source-Spannung Vds: 60V rohsCompliant: YES Dauer-Drainstrom Id: 25A hazardous: false rohsPhthalatesCompliant: YES Qualifikation: AEC-Q101 isCanonical: N MSL: MSL 1 - unbegrenzt usEccn: EAR99 Gate-Source-Schwellenspannung, max.: 1.7V euEccn: NLR Verlustleistung: 29W Bauform - Transistor: TO-252 (DPAK) Anzahl der Pins: 3Pin(s) Produktpalette: OptiMOS T2 productTraceability: Yes-Date/Lot Code Kanaltyp: n-Kanal Rds(on)-Prüfspannung: 10V Betriebstemperatur, max.: 175°C Drain-Source-Durchgangswiderstand: 0.03ohm SVHC: No SVHC (25-Jun-2025) | auf Bestellung 2904 Stücke: Lieferzeit 14-21 Tag (e) |
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| IPD25N06S4L30ATMA2 | Infineon Technologies | Description: MOSFET N-CH 60V 25A TO252-31 Packaging: Tape & Reel (TR) Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 25A (Tc) Rds On (Max) @ Id, Vgs: 30mOhm @ 25A, 10V Power Dissipation (Max): 29W (Tc) Vgs(th) (Max) @ Id: 2.2V @ 8µA Supplier Device Package: PG-TO252-3-11 Grade: Automotive Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±16V Drain to Source Voltage (Vdss): 60 V Gate Charge (Qg) (Max) @ Vgs: 16.3 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1220 pF @ 25 V Qualification: AEC-Q101 | auf Bestellung 10000 Stücke: Lieferzeit 10-14 Tag (e) |
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| IPD26N06S2L-35 | Infineon Technologies | MOSFET N-Ch 55V 30A DPAK-2 OptiMOS | Produkt ist nicht verfügbar | Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||||
| IPD26N06S2L35ATMA1 | Infineon Technologies | Description: MOSFET N-CH 55V 30A TO252-3 Packaging: Tape & Reel (TR) Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 30A (Tc) Rds On (Max) @ Id, Vgs: 35mOhm @ 13A, 10V Power Dissipation (Max): 68W (Tc) Vgs(th) (Max) @ Id: 2V @ 26µA Supplier Device Package: PG-TO252-3-11 Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 55 V Gate Charge (Qg) (Max) @ Vgs: 24 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 621 pF @ 25 V | Produkt ist nicht verfügbar | Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||||
| IPD26N06S2L35ATMA1 | Infineon Technologies | Trans MOSFET N-CH 55V 30A Automotive 3-Pin(2+Tab) DPAK T/R | auf Bestellung 1683 Stücke: Lieferzeit 14-21 Tag (e) |
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| IPD26N06S2L35ATMA2 | Infineon Technologies | Trans MOSFET N-CH 55V 30A Automotive 3-Pin(2+Tab) DPAK T/R | auf Bestellung 58 Stücke: Lieferzeit 14-21 Tag (e) | Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||||
| IPD26N06S2L35ATMA2 | INFINEON TECHNOLOGIES | Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 55V; 22A; Idm: 120A; 68W; PG-TO252-3 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 55V Drain current: 22A Pulsed drain current: 120A Power dissipation: 68W Case: PG-TO252-3 Gate-source voltage: ±20V On-state resistance: 35mΩ Mounting: SMD Gate charge: 10nC Kind of package: reel Kind of channel: enhancement Technology: OptiMOS™ | Produkt ist nicht verfügbar | Mindestbestellmenge: 2500 Stücke Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||||
| IPD26N06S2L35ATMA2 | Infineon Technologies | MOSFETs MOSFET_)40V 60V) | auf Bestellung 4630 Stücke: Lieferzeit 10-14 Tag (e) |
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| IPD26N06S2L35ATMA2 | Infineon Technologies | Description: MOSFET N-CH 55V 30A TO252-31 Packaging: Cut Tape (CT) Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 30A (Tc) Rds On (Max) @ Id, Vgs: 35mOhm @ 13A, 10V Power Dissipation (Max): 68W (Tc) Vgs(th) (Max) @ Id: 2V @ 26µA Supplier Device Package: PG-TO252-3-11 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 55 V Gate Charge (Qg) (Max) @ Vgs: 24 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 621 pF @ 25 V | auf Bestellung 1102 Stücke: Lieferzeit 10-14 Tag (e) |
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| IPD26N06S2L35ATMA2 | Infineon Technologies | Trans MOSFET N-CH 55V 30A Automotive 3-Pin(2+Tab) DPAK T/R | Produkt ist nicht verfügbar | Mindestbestellmenge: 2500 Stücke Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||||
| IPD26N06S2L35ATMA2 | INFINEON | Description: INFINEON - IPD26N06S2L35ATMA2 - Leistungs-MOSFET, n-Kanal, 55 V, 30 A, 0.035 ohm, TO-252 (DPAK), Oberflächenmontage tariffCode: 85412900 Transistormontage: Oberflächenmontage Drain-Source-Spannung Vds: 55V rohsCompliant: YES Dauer-Drainstrom Id: 30A hazardous: false rohsPhthalatesCompliant: YES Qualifikation: AEC-Q101 MSL: MSL 1 - unbegrenzt usEccn: EAR99 Gate-Source-Schwellenspannung, max.: 1.6V euEccn: NLR Verlustleistung: 68W Bauform - Transistor: TO-252 (DPAK) Anzahl der Pins: 3Pin(s) Produktpalette: OptiMOS productTraceability: Yes-Date/Lot Code Kanaltyp: n-Kanal Rds(on)-Prüfspannung: 10V Betriebstemperatur, max.: 175°C Drain-Source-Durchgangswiderstand: 0.035ohm SVHC: No SVHC (21-Jan-2025) | auf Bestellung 6352 Stücke: Lieferzeit 14-21 Tag (e) |
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| IPD26N06S2L35ATMA2 | Infineon Technologies | Description: MOSFET N-CH 55V 30A TO252-31 Packaging: Tape & Reel (TR) Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 30A (Tc) Rds On (Max) @ Id, Vgs: 35mOhm @ 13A, 10V Power Dissipation (Max): 68W (Tc) Vgs(th) (Max) @ Id: 2V @ 26µA Supplier Device Package: PG-TO252-3-11 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 55 V Gate Charge (Qg) (Max) @ Vgs: 24 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 621 pF @ 25 V | Produkt ist nicht verfügbar | Mindestbestellmenge: 2500 Stücke Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||||
| IPD2N08L50 | infineon | 04+ | auf Bestellung 5000 Stücke: Lieferzeit 21-28 Tag (e) | Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||||
| IPD3012-760 | Inventus Power | Desktop AC Adapters 30 WATT DESKTOP POWER SUPPLY 12V 2.5A | Produkt ist nicht verfügbar | Mindestbestellmenge: 100 Stücke Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||||
| IPD3012-760 | Inventus Power | Description: AC/DC DESKTOP ADAPTER 12V 30W Power (Watts): 30 W Part Status: Active No Load Power Consumption: 100mW (Max) Region Utilized: North America Input Connector: IEC 320-C6 Current - Output (Max): 2.5A Efficiency: Level VI Form: Desktop (Class I) Approval Agency: CE, cTUVus Input Type: Cord (Sold Separately) Applications: ITE (Commercial) Operating Temperature: 0°C ~ 60°C Cord Length: 48" (1.22m) Voltage - Input: 85 ~ 264 VAC Output Connector: Barrel Plug, 2.5mm I.D. x 5.5mm O.D. x 9.5mm Polarization: Positive Center Voltage - Output: 12V Size / Dimension: 3.53" L x 1.92" W x 0.99" H (89.6mm x 48.8mm x 25.2mm) Packaging: Box | auf Bestellung 2 Stücke: Lieferzeit 10-14 Tag (e) |
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| IPD3012-760S | Inventus Power | Description: AC/DC DESKTOP ADAPTER 12V 30W Packaging: Box Size / Dimension: 3.53" L x 1.92" W x 0.99" H (89.6mm x 48.8mm x 25.2mm) Voltage - Output: 12V Polarization: Positive Center Output Connector: Barrel Plug, 2.1mm I.D. x 5.5mm O.D. x 9.5mm Voltage - Input: 85 ~ 264 VAC Cord Length: 48" (1.22m) Operating Temperature: 0°C ~ 60°C Applications: ITE (Commercial) Input Type: Cord (Sold Separately) Approval Agency: CE, cTUVus Form: Desktop (Class I) Efficiency: Level VI Current - Output (Max): 2.5A Input Connector: IEC 320-C6 Region Utilized: North America No Load Power Consumption: 100mW (Max) Part Status: Active Power (Watts): 30 W | auf Bestellung 26 Stücke: Lieferzeit 10-14 Tag (e) |
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| IPD3015-760 | Inventus Power | Description: AC/DC DESKTOP ADAPTER 15V 30W | Produkt ist nicht verfügbar | Mindestbestellmenge: 100 Stücke Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||||
| IPD3015-760 | Inventus Power | Plug-In Adapter Single-OUT 15V 2A 30W | Produkt ist nicht verfügbar | Mindestbestellmenge: 100 Stücke Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||||
| IPD3015-760 | Inventus Power | Desktop AC Adapters 30W 15V 2A Class I / Level VI | auf Bestellung 100 Stücke: Lieferzeit 10-14 Tag (e) | Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||||
| IPD3015-760 | Inventus Power | Plug-In Adapter Single-OUT 15V 2A 30W | Produkt ist nicht verfügbar | Mindestbestellmenge: 100 Stücke Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||||
| IPD3018-760 | Inventus Power | Description: AC/DC DESKTOP ADAPTER 18V 30W Packaging: Box Size / Dimension: 3.53" L x 1.92" W x 0.99" H (89.6mm x 48.8mm x 25.2mm) Voltage - Output: 18V Polarization: Positive Center Output Connector: Barrel Plug, 2.5mm I.D. x 5.5mm O.D. x 9.5mm Voltage - Input: 85 ~ 264 VAC Cord Length: 48" (1.22m) Operating Temperature: 0°C ~ 60°C Applications: ITE (Commercial) Input Type: Cord (Sold Separately) Approval Agency: CE, cTUVus Form: Desktop (Class I) Efficiency: Level VI Current - Output (Max): 1.7A Input Connector: IEC 320-C6 Region Utilized: North America No Load Power Consumption: 100mW (Max) Part Status: Active Power (Watts): 30 W | auf Bestellung 24 Stücke: Lieferzeit 10-14 Tag (e) |
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| IPD3018-760 | Inventus Power | Desktop AC Adapters 30 WATT DESKTOP POWER SUPPLY 18V 1.7A 5.5 x 2.1 barrel | Produkt ist nicht verfügbar | Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||||
| IPD3018-760S | Inventus Power | Desktop AC Adapters 30W 18V 1.7A 2.1x5.5 connector | Produkt ist nicht verfügbar | Mindestbestellmenge: 100 Stücke Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||||
| IPD3019-760 | Inventus Power | Description: AC/DC DESKTOP ADAPTER 19V 30W Power (Watts): 30 W Part Status: Active No Load Power Consumption: 100mW (Max) Region Utilized: North America Input Connector: IEC 320-C6 Current - Output (Max): 1.6A Efficiency: Level VI Form: Desktop (Class I) Approval Agency: CE, cTUVus Input Type: Cord (Sold Separately) Applications: ITE (Commercial) Operating Temperature: 0°C ~ 60°C Cord Length: 48" (1.22m) Voltage - Input: 85 ~ 264 VAC Output Connector: Barrel Plug, 2.5mm I.D. x 5.5mm O.D. x 9.5mm Polarization: Positive Center Voltage - Output: 19V Size / Dimension: 3.53" L x 1.92" W x 0.99" H (89.6mm x 48.8mm x 25.2mm) Packaging: Box | auf Bestellung 134 Stücke: Lieferzeit 10-14 Tag (e) |
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| IPD3019-760S | Inventus Power | Description: AC/DC DESKTOP ADAPTER 19V Packaging: Box Size / Dimension: 3.53" L x 1.92" W x 0.99" H (89.6mm x 48.8mm x 25.2mm) Voltage - Output: 19V Polarization: Positive Center Output Connector: Barrel Plug, 2.1mm I.D. x 5.5mm O.D. x 9.5mm Voltage - Input: 85 ~ 264 VAC Cord Length: 48" (1.22m) Operating Temperature: 0°C ~ 60°C Applications: ITE (Commercial) Input Type: Cord (Sold Separately) Approval Agency: CE, cTUVus Form: Desktop (Class I) Efficiency: Level VI Current - Output (Max): 1.6A Input Connector: IEC 320-C6 Region Utilized: North America No Load Power Consumption: 100mW (Max) Part Status: Active | auf Bestellung 91 Stücke: Lieferzeit 10-14 Tag (e) |
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| IPD3024-760 | Inventus Power | Description: AC/DC DESKTOP ADAPTER 24V 30W Power (Watts): 30 W Part Status: Active No Load Power Consumption: 100mW (Max) Region Utilized: North America Input Connector: IEC 320-C6 Current - Output (Max): 1.25A Efficiency: Level VI Form: Desktop (Class I) Approval Agency: CE, cTUVus Input Type: Cord (Sold Separately) Applications: ITE (Commercial) Operating Temperature: 0°C ~ 60°C Cord Length: 48" (1.22m) Voltage - Input: 85 ~ 264 VAC Output Connector: Barrel Plug, 2.5mm I.D. x 5.5mm O.D. x 9.5mm Polarization: Positive Center Voltage - Output: 24V Size / Dimension: 3.53" L x 1.92" W x 0.99" H (89.6mm x 48.8mm x 25.2mm) Packaging: Box | Produkt ist nicht verfügbar | Mindestbestellmenge: 100 Stücke Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||||
| IPD3024-760S | Inventus Power | Description: AC/DC DESKTOP ADAPTER 24V 30W Packaging: Box Size / Dimension: 3.53" L x 1.92" W x 0.99" H (89.6mm x 48.8mm x 25.2mm) Voltage - Output: 24V Polarization: Positive Center Output Connector: Barrel Plug, 2.1mm I.D. x 5.5mm O.D. x 9.5mm Voltage - Input: 85 ~ 264 VAC Cord Length: 48" (1.22m) Operating Temperature: 0°C ~ 60°C Applications: ITE (Commercial) Input Type: Cord (Sold Separately) Approval Agency: CE, cTUVus Form: Desktop (Class I) Efficiency: Level VI Current - Output (Max): 1.25A Input Connector: IEC 320-C6 Region Utilized: North America No Load Power Consumption: 100mW (Max) Part Status: Active Power (Watts): 30 W | Produkt ist nicht verfügbar | Mindestbestellmenge: 100 Stücke Im Einkaufswagen Stück im Wert von UAH |