Produkte > DMP
| Bezeichnung | Hersteller | Beschreibung | Verfügbarkeit | Privatkunde | ||||||||||||||
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| DMP3027LFDEQ-13 | Diodes Incorporated | Description: MOSFET BVDSS: 25V~30V U-DFN2020- Packaging: Tape & Reel (TR) Package / Case: 6-PowerUDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 8.5A (Ta) Rds On (Max) @ Id, Vgs: 25mOhm @ 7A, 10V Power Dissipation (Max): 1W (Ta) Vgs(th) (Max) @ Id: 2.4V @ 250µA Supplier Device Package: U-DFN2020-6 (Type E) Grade: Automotive Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 21.8 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1142 pF @ 15 V Qualification: AEC-Q101 | Produkt ist nicht verfügbar | Mindestbestellmenge: 10000 Stücke Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
| DMP3027LFDEQ-7 | Diodes Incorporated | Description: MOSFET BVDSS: 25V~30V U-DFN2020- Packaging: Tape & Reel (TR) Package / Case: 6-PowerUDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 8.5A (Ta) Rds On (Max) @ Id, Vgs: 25mOhm @ 7A, 10V Power Dissipation (Max): 1W (Ta) Vgs(th) (Max) @ Id: 2.4V @ 250µA Supplier Device Package: U-DFN2020-6 (Type E) Grade: Automotive Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 21.8 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1142 pF @ 15 V Qualification: AEC-Q101 | Produkt ist nicht verfügbar | Mindestbestellmenge: 3000 Stücke Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
| DMP3027LFDF-7 | Diodes Incorporated | Description: IC Packaging: Tape & Reel (TR) Package / Case: 6-UDFN Exposed Pad Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 8.5A (Ta) Rds On (Max) @ Id, Vgs: 25mOhm @ 7A, 10V Power Dissipation (Max): 1.4W (Ta) Vgs(th) (Max) @ Id: 2.4V @ 250µA Supplier Device Package: U-DFN2020-6 (Type F) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 21.8 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1142 pF @ 15 V | Produkt ist nicht verfügbar | Mindestbestellmenge: 3000 Stücke Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
| DMP3027LFDF-7 | Diodes Incorporated | Description: IC Packaging: Cut Tape (CT) Package / Case: 6-UDFN Exposed Pad Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 8.5A (Ta) Rds On (Max) @ Id, Vgs: 25mOhm @ 7A, 10V Power Dissipation (Max): 1.4W (Ta) Vgs(th) (Max) @ Id: 2.4V @ 250µA Supplier Device Package: U-DFN2020-6 (Type F) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 21.8 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1142 pF @ 15 V | auf Bestellung 1844 Stücke: Lieferzeit 10-14 Tag (e) |
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| DMP3028LFDE-13 | Diodes Incorporated | MOSFETs 30V P-Ch Enh FET 32mOhm -10V -6.8A | auf Bestellung 989 Stücke: Lieferzeit 10-14 Tag (e) |
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| DMP3028LFDE-13 | DIODES INC. | Description: DIODES INC. - DMP3028LFDE-13 - Leistungs-MOSFET, p-Kanal, 30 V, 6.8 A, 0.02 ohm, U-DFN2020, Oberflächenmontage tariffCode: 85411000 Transistormontage: Oberflächenmontage euEccn: NLR Drain-Source-Spannung Vds: 30V rohsCompliant: YES Dauer-Drainstrom Id: 6.8A hazardous: false rohsPhthalatesCompliant: YES Qualifikation: - isCanonical: Y Gate-Source-Schwellenspannung, max.: 2.4V Verlustleistung: 660mW SVHC: No SVHC (25-Jun-2025) Bauform - Transistor: U-DFN2020 Anzahl der Pins: 6Pin(s) Produktpalette: - productTraceability: Yes-Date/Lot Code usEccn: EAR99 Kanaltyp: p-Kanal Betriebstemperatur, max.: 150°C Rds(on)-Prüfspannung: 10V Drain-Source-Durchgangswiderstand: 0.02ohm | auf Bestellung 2605 Stücke: Lieferzeit 14-21 Tag (e) |
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| DMP3028LFDE-13 | Diodes Incorporated | Description: MOSFET P-CH 30V 6.8A 6UDFN Packaging: Tape & Reel (TR) Package / Case: 6-PowerUDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 6.8A (Ta) Rds On (Max) @ Id, Vgs: 32mOhm @ 7A, 10V Power Dissipation (Max): 660mW (Ta) Vgs(th) (Max) @ Id: 2.4V @ 250µA Supplier Device Package: U-DFN2020-6 (Type E) Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 22 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1241 pF @ 15 V | Produkt ist nicht verfügbar | Mindestbestellmenge: 10000 Stücke Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
| DMP3028LFDE-13 | DIODES INC. | Description: DIODES INC. - DMP3028LFDE-13 - Leistungs-MOSFET, p-Kanal, 30 V, 6.8 A, 0.02 ohm, U-DFN2020, Oberflächenmontage tariffCode: 85411000 Transistormontage: Oberflächenmontage euEccn: NLR Drain-Source-Spannung Vds: 30V rohsCompliant: YES Dauer-Drainstrom Id: 6.8A hazardous: false rohsPhthalatesCompliant: YES Qualifikation: - isCanonical: N Gate-Source-Schwellenspannung, max.: 2.4V Verlustleistung: 660mW SVHC: No SVHC (25-Jun-2025) Bauform - Transistor: U-DFN2020 Anzahl der Pins: 6Pin(s) Produktpalette: - productTraceability: Yes-Date/Lot Code usEccn: EAR99 Kanaltyp: p-Kanal Betriebstemperatur, max.: 150°C Rds(on)-Prüfspannung: 10V Drain-Source-Durchgangswiderstand: 0.02ohm | auf Bestellung 2605 Stücke: Lieferzeit 14-21 Tag (e) |
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| DMP3028LFDE-13 | DIODES INCORPORATED | Category: SMD P channel transistors Description: Transistor: P-MOSFET; unipolar; -30V; -6.6A; Idm: -40A; 1.3W Case: U-DFN2020-6 Mounting: SMD Kind of package: 13 inch reel; tape Pulsed drain current: -40A Power dissipation: 1.3W Gate charge: 33nC Polarisation: unipolar Drain current: -6.6A Kind of channel: enhancement Drain-source voltage: -30V Type of transistor: P-MOSFET Gate-source voltage: ±20V On-state resistance: 38mΩ | Produkt ist nicht verfügbar | Mindestbestellmenge: 10000 Stücke Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
| DMP3028LFDE-13 | Diodes Zetex | Trans MOSFET P-CH 30V 6.8A 6-Pin UDFN EP T/R | Produkt ist nicht verfügbar | Mindestbestellmenge: 10000 Stücke Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
| DMP3028LFDE-13 | Diodes Incorporated | Description: MOSFET P-CH 30V 6.8A 6UDFN Packaging: Cut Tape (CT) Package / Case: 6-PowerUDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 6.8A (Ta) Rds On (Max) @ Id, Vgs: 32mOhm @ 7A, 10V Power Dissipation (Max): 660mW (Ta) Vgs(th) (Max) @ Id: 2.4V @ 250µA Supplier Device Package: U-DFN2020-6 (Type E) Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 22 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1241 pF @ 15 V | auf Bestellung 6808 Stücke: Lieferzeit 10-14 Tag (e) |
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| DMP3028LFDE-7 | Diodes Incorporated | Description: MOSFET P-CH 30V 6.8A 6UDFN Packaging: Tape & Reel (TR) Package / Case: 6-PowerUDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 6.8A (Ta) Rds On (Max) @ Id, Vgs: 32mOhm @ 7A, 10V Power Dissipation (Max): 660mW (Ta) Vgs(th) (Max) @ Id: 2.4V @ 250µA Supplier Device Package: U-DFN2020-6 (Type E) Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 22 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1241 pF @ 15 V | Produkt ist nicht verfügbar | Mindestbestellmenge: 3000 Stücke Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
| DMP3028LFDE-7 | DIODES INCORPORATED | Category: SMD P channel transistors Description: Transistor: P-MOSFET; unipolar; -30V; -6.6A; Idm: -40A; 1.3W Case: U-DFN2020-6 Mounting: SMD Kind of package: 7 inch reel; tape Pulsed drain current: -40A Power dissipation: 1.3W Gate charge: 33nC Polarisation: unipolar Drain current: -6.6A Kind of channel: enhancement Drain-source voltage: -30V Type of transistor: P-MOSFET Gate-source voltage: ±20V On-state resistance: 38mΩ | Produkt ist nicht verfügbar | Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
| DMP3028LFDE-7 | DIODES INC. | Description: DIODES INC. - DMP3028LFDE-7 - Leistungs-MOSFET, p-Kanal, 30 V, 6.8 A, 0.02 ohm, U-DFN2020, Oberflächenmontage tariffCode: 85412900 Transistormontage: Oberflächenmontage euEccn: NLR Drain-Source-Spannung Vds: 30V rohsCompliant: YES Dauer-Drainstrom Id: 6.8A hazardous: false rohsPhthalatesCompliant: YES Qualifikation: AEC-Q101 isCanonical: Y Gate-Source-Schwellenspannung, max.: 2.4V Verlustleistung: 2.03W SVHC: No SVHC (25-Jun-2025) Bauform - Transistor: U-DFN2020 Anzahl der Pins: 6Pin(s) Produktpalette: - productTraceability: Yes-Date/Lot Code usEccn: EAR99 Kanaltyp: p-Kanal Betriebstemperatur, max.: 150°C Rds(on)-Prüfspannung: 10V Drain-Source-Durchgangswiderstand: 0.02ohm | auf Bestellung 3045 Stücke: Lieferzeit 14-21 Tag (e) |
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| DMP3028LFDE-7 | Diodes Zetex | Trans MOSFET P-CH 30V 6.8A 6-Pin UDFN EP T/R | Produkt ist nicht verfügbar | Mindestbestellmenge: 3000 Stücke Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
| DMP3028LFDE-7 | Diodes Incorporated | Description: MOSFET P-CH 30V 6.8A 6UDFN Packaging: Cut Tape (CT) Package / Case: 6-PowerUDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 6.8A (Ta) Rds On (Max) @ Id, Vgs: 32mOhm @ 7A, 10V Power Dissipation (Max): 660mW (Ta) Vgs(th) (Max) @ Id: 2.4V @ 250µA Supplier Device Package: U-DFN2020-6 (Type E) Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 22 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1241 pF @ 15 V | auf Bestellung 1299 Stücke: Lieferzeit 10-14 Tag (e) |
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| DMP3028LFDE-7 | Diodes Incorporated | MOSFETs 30V P-Ch Enh FET 32mOhm -10V -6.8A | auf Bestellung 6734 Stücke: Lieferzeit 10-14 Tag (e) |
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| DMP3028LFDE-7 | DIODES INC. | Description: DIODES INC. - DMP3028LFDE-7 - Leistungs-MOSFET, p-Kanal, 30 V, 6.8 A, 0.02 ohm, U-DFN2020, Oberflächenmontage tariffCode: 85412900 Transistormontage: Oberflächenmontage euEccn: NLR Drain-Source-Spannung Vds: 30V rohsCompliant: YES Dauer-Drainstrom Id: 6.8A hazardous: false rohsPhthalatesCompliant: YES Qualifikation: AEC-Q101 isCanonical: N Gate-Source-Schwellenspannung, max.: 2.4V Verlustleistung: 2.03W SVHC: No SVHC (25-Jun-2025) Bauform - Transistor: U-DFN2020 Anzahl der Pins: 6Pin(s) Produktpalette: - productTraceability: Yes-Date/Lot Code usEccn: EAR99 Kanaltyp: p-Kanal Betriebstemperatur, max.: 150°C Rds(on)-Prüfspannung: 10V Drain-Source-Durchgangswiderstand: 0.02ohm | auf Bestellung 3045 Stücke: Lieferzeit 14-21 Tag (e) |
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| DMP3028LFDE-7-W | Diodes Incorporated | MOSFETs MOSFET BVDSS: 25V~30V U-DFN2020-6 T&R 3K | Produkt ist nicht verfügbar | Mindestbestellmenge: 6 Stücke Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
| DMP3028LFDE-7-W | Diodes Incorporated | Description: MOSFET P-CH 30V 6.8A 6UDFN | auf Bestellung 15000 Stücke: Lieferzeit 10-14 Tag (e) |
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| DMP3028LFDE-7-W | Diodes Incorporated | Description: MOSFET P-CH 30V 6.8A 6UDFN | auf Bestellung 15000 Stücke: Lieferzeit 10-14 Tag (e) |
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| DMP3028LFDEQ-13 | Diodes Zetex | Trans MOSFET P-CH 30V 6.8A 6-Pin UDFN EP T/R Automotive AEC-Q101 | Produkt ist nicht verfügbar | Mindestbestellmenge: 10000 Stücke Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
| DMP3028LFDEQ-13 | Diodes Incorporated | MOSFETs MOSFET BVDSS: 25V~30V U-DFN2020-6 T&R 10K | Produkt ist nicht verfügbar | Mindestbestellmenge: 10000 Stücke Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
| DMP3028LFDEQ-13 | Diodes Incorporated | Description: MOSFET BVDSS: 25V~30V U-DFN2020- Packaging: Tape & Reel (TR) Package / Case: 6-PowerUDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 6.8A (Ta) Rds On (Max) @ Id, Vgs: 25mOhm @ 7A, 10V Power Dissipation (Max): 660mW (Ta) Vgs(th) (Max) @ Id: 2.4V @ 250µA Supplier Device Package: U-DFN2020-6 (Type E) Grade: Automotive Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 33 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1860 pF @ 15 V Qualification: AEC-Q101 | Produkt ist nicht verfügbar | Mindestbestellmenge: 10000 Stücke Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
| DMP3028LFDEQ-7 | Diodes Incorporated | MOSFETs MOSFET BVDSS: 25V~30V U-DFN2020-6 T&R 3K | Produkt ist nicht verfügbar | Mindestbestellmenge: 2 Stücke Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
| DMP3028LFDEQ-7 | Diodes Incorporated | Description: MOSFET BVDSS: 25V~30V U-DFN2020- Packaging: Tape & Reel (TR) Package / Case: 6-PowerUDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 6.8A (Ta) Rds On (Max) @ Id, Vgs: 25mOhm @ 7A, 10V Power Dissipation (Max): 660mW (Ta) Vgs(th) (Max) @ Id: 2.4V @ 250µA Supplier Device Package: U-DFN2020-6 (Type E) Grade: Automotive Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 33 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1860 pF @ 15 V Qualification: AEC-Q101 | Produkt ist nicht verfügbar | Mindestbestellmenge: 3000 Stücke Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
| DMP3028LFDEQ-7 | Diodes Zetex | Trans MOSFET P-CH 30V 6.8A 6-Pin UDFN EP T/R Automotive AEC-Q101 | Produkt ist nicht verfügbar | Mindestbestellmenge: 3000 Stücke Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
| DMP3028LK3-13 | Diodes Incorporated | MOSFETs P-Ch Enh Mode -30V Low Rdson -20Vgss | auf Bestellung 9595 Stücke: Lieferzeit 10-14 Tag (e) |
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| DMP3028LK3-13 | DIODES INCORPORATED | Category: SMD P channel transistors Description: Transistor: P-MOSFET; unipolar; -30V; -22A; Idm: -40A; 1.6W; TO252 Mounting: SMD Pulsed drain current: -40A Power dissipation: 1.6W Polarisation: unipolar Drain current: -22A Kind of channel: enhancement Drain-source voltage: -30V Type of transistor: P-MOSFET Gate-source voltage: ±20V Kind of package: 13 inch reel; tape Case: TO252 On-state resistance: 25mΩ | auf Bestellung 1396 Stücke: Lieferzeit 14-21 Tag (e) |
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| DMP3028LK3-13 | DIODES INC. | Description: DIODES INC. - DMP3028LK3-13 - Leistungs-MOSFET, p-Kanal, 30 V, 27 A, 0.02 ohm, TO-252 (DPAK), Oberflächenmontage tariffCode: 85412900 Transistormontage: Oberflächenmontage euEccn: NLR Drain-Source-Spannung Vds: 30V rohsCompliant: YES Dauer-Drainstrom Id: 27A hazardous: false rohsPhthalatesCompliant: YES Qualifikation: - isCanonical: Y MSL: MSL 1 - unbegrenzt Gate-Source-Schwellenspannung, max.: 2.4V Verlustleistung: 1.6W SVHC: No SVHC (25-Jun-2025) Bauform - Transistor: TO-252 (DPAK) Anzahl der Pins: 3Pin(s) Produktpalette: - productTraceability: Yes-Date/Lot Code usEccn: EAR99 Kanaltyp: p-Kanal Betriebstemperatur, max.: 150°C Rds(on)-Prüfspannung: 10V Drain-Source-Durchgangswiderstand: 0.02ohm | auf Bestellung 6514 Stücke: Lieferzeit 14-21 Tag (e) |
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| DMP3028LK3-13 | Diodes Incorporated | Description: MOSFET P-CH 30V 27A TO252 Packaging: Tape & Reel (TR) Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 27A (Tc) Rds On (Max) @ Id, Vgs: 25mOhm @ 7A, 10V Power Dissipation (Max): 1.6W (Ta) Vgs(th) (Max) @ Id: 2.4V @ 250µA Supplier Device Package: TO-252-3 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 22 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1241 pF @ 15 V | auf Bestellung 5000 Stücke: Lieferzeit 10-14 Tag (e) |
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| DMP3028LK3-13 | Diodes Zetex | Trans MOSFET P-CH 30V 27A 3-Pin(2+Tab) DPAK T/R | Produkt ist nicht verfügbar | Mindestbestellmenge: 2500 Stücke Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
| DMP3028LK3-13 | DIODES INC. | Description: DIODES INC. - DMP3028LK3-13 - Leistungs-MOSFET, p-Kanal, 30 V, 27 A, 0.02 ohm, TO-252 (DPAK), Oberflächenmontage tariffCode: 85412900 Transistormontage: Oberflächenmontage euEccn: NLR Drain-Source-Spannung Vds: 30V rohsCompliant: YES Dauer-Drainstrom Id: 27A hazardous: false rohsPhthalatesCompliant: YES Qualifikation: - isCanonical: N MSL: MSL 1 - unbegrenzt Verlustleistung Pd: 1.6W Gate-Source-Schwellenspannung, max.: 2.4V Verlustleistung: 1.6W SVHC: No SVHC (25-Jun-2025) Bauform - Transistor: TO-252 (DPAK) Qualifizierungsstandard der Automobilindustrie: - Anzahl der Pins: 3Pin(s) Produktpalette: - productTraceability: Yes-Date/Lot Code Wandlerpolarität: p-Kanal usEccn: EAR99 Kanaltyp: p-Kanal Betriebswiderstand, Rds(on): 0.02ohm Betriebstemperatur, max.: 150°C Rds(on)-Prüfspannung: 10V Drain-Source-Durchgangswiderstand: 0.02ohm | auf Bestellung 6514 Stücke: Lieferzeit 14-21 Tag (e) |
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| DMP3028LK3-13 | Diodes Incorporated | Description: MOSFET P-CH 30V 27A TO252 Packaging: Cut Tape (CT) Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 27A (Tc) Rds On (Max) @ Id, Vgs: 25mOhm @ 7A, 10V Power Dissipation (Max): 1.6W (Ta) Vgs(th) (Max) @ Id: 2.4V @ 250µA Supplier Device Package: TO-252-3 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 22 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1241 pF @ 15 V | auf Bestellung 6495 Stücke: Lieferzeit 10-14 Tag (e) |
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| DMP3028LK3-13 | Diodes Zetex | Trans MOSFET P-CH 30V 27A 3-Pin(2+Tab) DPAK T/R | auf Bestellung 5000 Stücke: Lieferzeit 14-21 Tag (e) |
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| DMP3028LK3Q-13 | Diodes Zetex | Trans MOSFET P-CH 30V 27A 3-Pin(2+Tab) DPAK T/R Automotive AEC-Q101 | auf Bestellung 2500 Stücke: Lieferzeit 14-21 Tag (e) |
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| DMP3028LK3Q-13 | Diodes Incorporated | Description: MOSFET P-CHANNEL 30V 27A TO252 Packaging: Tape & Reel (TR) Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 27A (Tc) Rds On (Max) @ Id, Vgs: 25mOhm @ 7A, 10V Power Dissipation (Max): 2.8W (Ta) Vgs(th) (Max) @ Id: 2.4V @ 250µA Supplier Device Package: TO-252 (DPAK) Grade: Automotive Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 22 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1241 pF @ 15 V Qualification: AEC-Q101 | Produkt ist nicht verfügbar | Mindestbestellmenge: 2500 Stücke Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
| DMP3028LK3Q-13 | Diodes Zetex | Trans MOSFET P-CH 30V 27A 3-Pin(2+Tab) DPAK T/R Automotive AEC-Q101 | auf Bestellung 2500 Stücke: Lieferzeit 14-21 Tag (e) |
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| DMP3028LK3Q-13 | Diodes Incorporated | MOSFETs MOSFET BVDSS: 25V~30V TO252 T&R 2.5K | Produkt ist nicht verfügbar | Mindestbestellmenge: 2 Stücke Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
| DMP3028LK3Q-13 | DIODES INCORPORATED | Category: SMD P channel transistors Description: Transistor: P-MOSFET; unipolar; -30V; -8.6A; Idm: -40A; 1.8W; TO252 Case: TO252 Mounting: SMD Kind of package: 13 inch reel; tape Pulsed drain current: -40A Power dissipation: 1.8W Gate charge: 22nC Polarisation: unipolar Drain current: -8.6A Kind of channel: enhancement Drain-source voltage: -30V Application: automotive industry Type of transistor: P-MOSFET Gate-source voltage: ±20V On-state resistance: 38mΩ | Produkt ist nicht verfügbar | Mindestbestellmenge: 2500 Stücke Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
| DMP3028LK3Q-13 | Diodes Incorporated | Description: MOSFET P-CHANNEL 30V 27A TO252 Packaging: Cut Tape (CT) Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 27A (Tc) Rds On (Max) @ Id, Vgs: 25mOhm @ 7A, 10V Power Dissipation (Max): 2.8W (Ta) Vgs(th) (Max) @ Id: 2.4V @ 250µA Supplier Device Package: TO-252 (DPAK) Grade: Automotive Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 22 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1241 pF @ 15 V Qualification: AEC-Q101 | auf Bestellung 1515 Stücke: Lieferzeit 10-14 Tag (e) |
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| DMP3028LPSQ-13 | Diodes Incorporated | Description: MOSFET P-CH 30V 21A PWRDI5060-8 Packaging: Cut Tape (CT) Package / Case: 8-PowerTDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 21A (Tc) Rds On (Max) @ Id, Vgs: 28mOhm @ 7A, 10V Power Dissipation (Max): 1.28W Vgs(th) (Max) @ Id: 2.4V @ 250µA Supplier Device Package: PowerDI5060-8 Grade: Automotive Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 22 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1372 pF @ 15 V Qualification: AEC-Q101 | auf Bestellung 59535 Stücke: Lieferzeit 10-14 Tag (e) |
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| DMP3028LPSQ-13 | Diodes Incorporated | MOSFETs MOSFET BVDSS: 25V-30V | auf Bestellung 3204 Stücke: Lieferzeit 10-14 Tag (e) |
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| DMP3028LPSQ-13 | DIODES INCORPORATED | Category: SMD P channel transistors Description: Transistor: P-MOSFET; unipolar; -30V; -17A; Idm: -70A; 2.12W Case: PowerDI5060-8 Mounting: SMD Kind of package: 13 inch reel; tape Pulsed drain current: -70A Power dissipation: 2.12W Gate charge: 22nC Polarisation: unipolar Drain current: -17A Kind of channel: enhancement Drain-source voltage: -30V Application: automotive industry Type of transistor: P-MOSFET Gate-source voltage: ±20V On-state resistance: 38mΩ | Produkt ist nicht verfügbar | Mindestbestellmenge: 2500 Stücke Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
| DMP3028LPSQ-13 | Diodes Zetex | Trans MOSFET P-CH 30V 21A Automotive AEC-Q101 8-Pin PowerDI EP T/R | auf Bestellung 55000 Stücke: Lieferzeit 14-21 Tag (e) |
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| DMP3028LPSQ-13 | DIODES INC. | Description: DIODES INC. - DMP3028LPSQ-13 - Leistungs-MOSFET, p-Kanal, 30 V, 21 A, 0.018 ohm, PowerDI 5060, Oberflächenmontage tariffCode: 85411000 Transistormontage: Oberflächenmontage euEccn: NLR Drain-Source-Spannung Vds: 30V rohsCompliant: YES Dauer-Drainstrom Id: 21A hazardous: false rohsPhthalatesCompliant: YES Qualifikation: AEC-Q101 isCanonical: Y Gate-Source-Schwellenspannung, max.: 1.3V Verlustleistung: 1.28W SVHC: No SVHC (25-Jun-2025) Bauform - Transistor: PowerDI 5060 Anzahl der Pins: 8Pin(s) Produktpalette: - productTraceability: Yes-Date/Lot Code usEccn: EAR99 Kanaltyp: p-Kanal Betriebstemperatur, max.: 150°C Rds(on)-Prüfspannung: 10V Drain-Source-Durchgangswiderstand: 0.018ohm | auf Bestellung 231 Stücke: Lieferzeit 14-21 Tag (e) |
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| DMP3028LPSQ-13 | Diodes Incorporated | Description: MOSFET P-CH 30V 21A PWRDI5060-8 Packaging: Tape & Reel (TR) Package / Case: 8-PowerTDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 21A (Tc) Rds On (Max) @ Id, Vgs: 28mOhm @ 7A, 10V Power Dissipation (Max): 1.28W Vgs(th) (Max) @ Id: 2.4V @ 250µA Supplier Device Package: PowerDI5060-8 Grade: Automotive Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 22 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1372 pF @ 15 V Qualification: AEC-Q101 | auf Bestellung 57500 Stücke: Lieferzeit 10-14 Tag (e) |
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| DMP3028LPSQ-13 | Diodes Zetex | Trans MOSFET P-CH 30V 21A Automotive AEC-Q101 8-Pin PowerDI EP T/R | auf Bestellung 2500 Stücke: Lieferzeit 14-21 Tag (e) |
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| DMP3028LPSQ-13 | Diodes Zetex | Trans MOSFET P-CH 30V 21A Automotive AEC-Q101 8-Pin PowerDI EP T/R | auf Bestellung 2500 Stücke: Lieferzeit 14-21 Tag (e) |
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| DMP3028LPSQ-13 | DIODES INC. | Description: DIODES INC. - DMP3028LPSQ-13 - Leistungs-MOSFET, p-Kanal, 30 V, 21 A, 0.018 ohm, PowerDI 5060, Oberflächenmontage tariffCode: 85411000 Transistormontage: Oberflächenmontage euEccn: NLR Drain-Source-Spannung Vds: 30V rohsCompliant: YES Dauer-Drainstrom Id: 21A hazardous: false rohsPhthalatesCompliant: YES Qualifikation: AEC-Q101 isCanonical: N Gate-Source-Schwellenspannung, max.: 1.3V Verlustleistung: 1.28W SVHC: No SVHC (25-Jun-2025) Bauform - Transistor: PowerDI 5060 Anzahl der Pins: 8Pin(s) Produktpalette: - productTraceability: Yes-Date/Lot Code usEccn: EAR99 Kanaltyp: p-Kanal Betriebstemperatur, max.: 150°C Rds(on)-Prüfspannung: 10V Drain-Source-Durchgangswiderstand: 0.018ohm | auf Bestellung 231 Stücke: Lieferzeit 14-21 Tag (e) |
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| DMP3028LPSQ-7 | Diodes Incorporated | Description: MOSFET P-CH 30V 21A PWRDI5060-8 Packaging: Cut Tape (CT) Package / Case: SC-70, SOT-323 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 21A (Tc) Rds On (Max) @ Id, Vgs: 28mOhm @ 7A, 10V Power Dissipation (Max): 1.28W Vgs(th) (Max) @ Id: 2.4V @ 250µA Supplier Device Package: SOT-323 Grade: Automotive Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 22 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1372 pF @ 15 V Qualification: AEC-Q101 | Produkt ist nicht verfügbar | Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
| DMP3028LPSQ-7 | Diodes Incorporated | Description: MOSFET P-CH 30V 21A PWRDI5060-8 Packaging: Tape & Reel (TR) Package / Case: SC-70, SOT-323 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 21A (Tc) Rds On (Max) @ Id, Vgs: 28mOhm @ 7A, 10V Power Dissipation (Max): 1.28W Vgs(th) (Max) @ Id: 2.4V @ 250µA Supplier Device Package: SOT-323 Grade: Automotive Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 22 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1372 pF @ 15 V Qualification: AEC-Q101 | Produkt ist nicht verfügbar | Mindestbestellmenge: 3000 Stücke Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
| DMP3028LPSQ-7 | Diodes Incorporated | MOSFET GenPurposeTranstr | Produkt ist nicht verfügbar | Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
| DMP3028LPSW-13 | Diodes Incorporated | MOSFETs MOSFET BVDSS: 25V 30 V PowerDI5060-8 T&R | Produkt ist nicht verfügbar | Mindestbestellmenge: 2 Stücke Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
| DMP3028LPSW-13 | Diodes Zetex | P-Channel Enhancement Mode MOSFET | Produkt ist nicht verfügbar | Mindestbestellmenge: 2500 Stücke Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
| DMP3028LPSW-13 | Diodes Incorporated | Description: MOSFET BVDSS: 25V~30V POWERDI506 Packaging: Tape & Reel (TR) Package / Case: 8-PowerTDFN Mounting Type: Surface Mount, Wettable Flank Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 21A (Tc) Rds On (Max) @ Id, Vgs: 28mOhm @ 7A, 10V Power Dissipation (Max): 1.28W (Ta), 2.1W (Tc) Vgs(th) (Max) @ Id: 2.4V @ 250µA Supplier Device Package: PowerDI5060-8 (Type UX) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 22 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1421 pF @ 15 V | Produkt ist nicht verfügbar | Mindestbestellmenge: 2500 Stücke Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
| DMP3028LSD | Diodes Incorporated | MOSFET | Produkt ist nicht verfügbar | Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
| DMP3028LSD-13 | Diodes Zetex | Trans MOSFET P-CH 30V 6A 8-Pin SO T/R | Produkt ist nicht verfügbar | Mindestbestellmenge: 2500 Stücke Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
| DMP3028LSD-13 | DIODES INC. | Description: DIODES INC. - DMP3028LSD-13 - Dual-MOSFET, p-Kanal, 30 V, 30 V, 6 A, 6 A tariffCode: 85411000 euEccn: NLR rohsCompliant: YES Dauer-Drainstrom Id, p-Kanal: 6A hazardous: false rohsPhthalatesCompliant: YES Qualifikation: - isCanonical: N Drain-Source-Spannung Vds, p-Kanal: 30V Dauer-Drainstrom Id, n-Kanal: 6A Drain-Source-Durchgangswiderstand, p-Kanal: 0.025ohm Verlustleistung, p-Kanal: 1.3W Drain-Source-Spannung Vds, n-Kanal: 30V SVHC: No SVHC (25-Jun-2025) Bauform - Transistor: SOIC Anzahl der Pins: 8Pin(s) Produktpalette: - Drain-Source-Durchgangswiderstand, n-Kanal: - productTraceability: Yes-Date/Lot Code usEccn: EAR99 Kanaltyp: p-Kanal Verlustleistung, n-Kanal: 1.3W Betriebstemperatur, max.: 150°C | auf Bestellung 177 Stücke: Lieferzeit 14-21 Tag (e) |
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| DMP3028LSD-13 | Diodes Incorporated | Description: MOSFET 2P-CH 30V 6A 8SO Supplier Device Package: 8-SO Vgs(th) (Max) @ Id: 3V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 10.9nC @ 10V Rds On (Max) @ Id, Vgs: 25mOhm @ 7A, 10V Input Capacitance (Ciss) (Max) @ Vds: 1241pF @ 15V Current - Continuous Drain (Id) @ 25°C: 6A Drain to Source Voltage (Vdss): 30V Power - Max: 1.3W Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 150°C (TJ) Configuration: 2 P-Channel (Dual) Mounting Type: Surface Mount Package / Case: 8-SOIC (0.154", 3.90mm Width) Packaging: Cut Tape (CT) | auf Bestellung 41462 Stücke: Lieferzeit 10-14 Tag (e) |
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| DMP3028LSD-13 | DIODES INC. | Description: DIODES INC. - DMP3028LSD-13 - Dual-MOSFET, p-Kanal, 30 V, 30 V, 6 A, 6 A tariffCode: 85411000 euEccn: NLR rohsCompliant: YES Dauer-Drainstrom Id, p-Kanal: 6A hazardous: false rohsPhthalatesCompliant: YES Qualifikation: - isCanonical: Y Drain-Source-Spannung Vds, p-Kanal: 30V Dauer-Drainstrom Id, n-Kanal: 6A Drain-Source-Durchgangswiderstand, p-Kanal: 0.025ohm Verlustleistung, p-Kanal: 1.3W Drain-Source-Spannung Vds, n-Kanal: 30V SVHC: No SVHC (25-Jun-2025) Bauform - Transistor: SOIC Anzahl der Pins: 8Pin(s) Produktpalette: - Drain-Source-Durchgangswiderstand, n-Kanal: - productTraceability: Yes-Date/Lot Code usEccn: EAR99 Kanaltyp: p-Kanal Verlustleistung, n-Kanal: 1.3W Betriebstemperatur, max.: 150°C | auf Bestellung 177 Stücke: Lieferzeit 14-21 Tag (e) |
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| DMP3028LSD-13 | Diodes Incorporated | Description: MOSFET 2P-CH 30V 6A 8SO Supplier Device Package: 8-SO Vgs(th) (Max) @ Id: 3V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 10.9nC @ 10V Rds On (Max) @ Id, Vgs: 25mOhm @ 7A, 10V Input Capacitance (Ciss) (Max) @ Vds: 1241pF @ 15V Current - Continuous Drain (Id) @ 25°C: 6A Drain to Source Voltage (Vdss): 30V Power - Max: 1.3W Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 8-SOIC (0.154", 3.90mm Width) Packaging: Tape & Reel (TR) Configuration: 2 P-Channel (Dual) | auf Bestellung 40000 Stücke: Lieferzeit 10-14 Tag (e) |
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| DMP3028LSD-13 | Diodes Incorporated | MOSFETs MOSFET BVDSS | auf Bestellung 9330 Stücke: Lieferzeit 10-14 Tag (e) |
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| DMP3028LSD-13 | DIODES INCORPORATED | Category: SMD P channel transistors Description: Transistor: P-MOSFET; unipolar; -30V; -5.8A; Idm: -30A; 1.1W; SO8 Case: SO8 Mounting: SMD Kind of package: 13 inch reel; tape Pulsed drain current: -30A Power dissipation: 1.1W Gate charge: 22nC Polarisation: unipolar Drain current: -5.8A Kind of channel: enhancement Drain-source voltage: -30V Type of transistor: P-MOSFET Gate-source voltage: ±20V On-state resistance: 38mΩ | Produkt ist nicht verfügbar | Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
| DMP3028LSDQ-13 | Diodes Incorporated | MOSFETs MOSFET BVDSS: 25V~30V SO-8 T&R 2.5K | Produkt ist nicht verfügbar | Mindestbestellmenge: 2 Stücke Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
| DMP3028LSDQ-13 | Diodes Incorporated | Description: IC Packaging: Tape & Reel (TR) Package / Case: 8-SOIC (0.154", 3.90mm Width) Mounting Type: Surface Mount Configuration: 2 P-Channel (Dual) Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 1.3W (Ta) Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 6A (Ta) Input Capacitance (Ciss) (Max) @ Vds: 1241pF @ 15V Rds On (Max) @ Id, Vgs: 28mOhm @ 7A, 10V Gate Charge (Qg) (Max) @ Vgs: 22nC @ 10V Vgs(th) (Max) @ Id: 3V @ 250µA Supplier Device Package: 8-SO Grade: Automotive Qualification: AEC-Q101 | Produkt ist nicht verfügbar | Mindestbestellmenge: 2500 Stücke Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
| DMP3030SN | auf Bestellung 12000 Stücke: Lieferzeit 21-28 Tag (e) | Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||||
| DMP3030SN-7 | Diodes Incorporated | Description: MOSFET P-CH 30V 700MA SC59-3 Packaging: Tape & Reel (TR) Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Operating Temperature: -65°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 700mA (Ta) Rds On (Max) @ Id, Vgs: 250mOhm @ 400mA, 10V Power Dissipation (Max): 500mW (Ta) Vgs(th) (Max) @ Id: 3V @ 1mA Supplier Device Package: SC-59-3 Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 30 V Input Capacitance (Ciss) (Max) @ Vds: 160 pF @ 10 V | auf Bestellung 87000 Stücke: Lieferzeit 10-14 Tag (e) |
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| DMP3030SN-7 | DIODES INCORPORATED | Category: SMD P channel transistors Description: Transistor: P-MOSFET; unipolar; -30V; -700mA; Idm: -2.8A; 500mW Case: SC59 Mounting: SMD Kind of package: 7 inch reel; tape Pulsed drain current: -2.8A Power dissipation: 0.5W Polarisation: unipolar Drain current: -700mA Kind of channel: enhancement Drain-source voltage: -30V Type of transistor: P-MOSFET Gate-source voltage: ±20V On-state resistance: 0.45Ω | auf Bestellung 1685 Stücke: Lieferzeit 14-21 Tag (e) |
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| DMP3030SN-7 | Diodes Incorporated | MOSFETs 30V 700mA | auf Bestellung 583 Stücke: Lieferzeit 10-14 Tag (e) |
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| DMP3030SN-7 | Diodes Incorporated | Description: MOSFET P-CH 30V 700MA SC59-3 Packaging: Cut Tape (CT) Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Operating Temperature: -65°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 700mA (Ta) Rds On (Max) @ Id, Vgs: 250mOhm @ 400mA, 10V Power Dissipation (Max): 500mW (Ta) Vgs(th) (Max) @ Id: 3V @ 1mA Supplier Device Package: SC-59-3 Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 30 V Input Capacitance (Ciss) (Max) @ Vds: 160 pF @ 10 V | auf Bestellung 87779 Stücke: Lieferzeit 10-14 Tag (e) |
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| DMP3035LSS | Diodes Incorporated | MOSFETs | Produkt ist nicht verfügbar | Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
| DMP3035LSS-13 | Diodes Incorporated | Description: MOSFET P-CH 30V 11A 8SOP Packaging: Tape & Reel (TR) Package / Case: 8-SOIC (0.154", 3.90mm Width) Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 11A (Ta) Rds On (Max) @ Id, Vgs: 16mOhm @ 8A, 10V Power Dissipation (Max): 2W (Ta) Vgs(th) (Max) @ Id: 2V @ 250µA Supplier Device Package: 8-SO Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 4.5V, 20V Vgs (Max): ±25V Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 30.7 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1655 pF @ 20 V | auf Bestellung 115000 Stücke: Lieferzeit 10-14 Tag (e) |
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| DMP3035LSS-13 | Diodes Incorporated | MOSFETs SINGLE P-CHANNEL | auf Bestellung 1416 Stücke: Lieferzeit 10-14 Tag (e) |
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| DMP3035SFG-7 | DIODES INCORPORATED | Category: SMD P channel transistors Description: Transistor: P-MOSFET; unipolar; -30V; -10A; Idm: -70A; 2.3W Kind of package: 7 inch reel; tape Case: PowerDI3333-8 On-state resistance: 29mΩ Mounting: SMD Pulsed drain current: -70A Power dissipation: 2.3W Gate charge: 35.5nC Polarisation: unipolar Drain current: -10A Kind of channel: enhancement Drain-source voltage: -30V Type of transistor: P-MOSFET Gate-source voltage: ±25V | auf Bestellung 1990 Stücke: Lieferzeit 14-21 Tag (e) |
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| DMP3035SFG-7 | Diodes Incorporated | Description: MOSFET P-CH 30V 8.5A PWRDI3333-8 Packaging: Tape & Reel (TR) Package / Case: 8-PowerVDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 8.5A (Ta) Rds On (Max) @ Id, Vgs: 20mOhm @ 8A, 10V Power Dissipation (Max): 950mW (Ta) Vgs(th) (Max) @ Id: 2.5V @ 250µA Supplier Device Package: PowerDI3333-8 Drive Voltage (Max Rds On, Min Rds On): 5V, 10V Vgs (Max): ±25V Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 17 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1633 pF @ 15 V | Produkt ist nicht verfügbar | Mindestbestellmenge: 2000 Stücke Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
| DMP3035SFG-7 | DIODES INC. | Description: DIODES INC. - DMP3035SFG-7 - Leistungs-MOSFET, p-Kanal, 30 V, 9.5 A, 0.015 ohm, PowerDI3333, Oberflächenmontage tariffCode: 85411000 Transistormontage: Oberflächenmontage euEccn: NLR Drain-Source-Spannung Vds: 30V rohsCompliant: YES Dauer-Drainstrom Id: 9.5A hazardous: false rohsPhthalatesCompliant: YES Qualifikation: - isCanonical: Y Gate-Source-Schwellenspannung, max.: 1.7V Verlustleistung: 2.3W SVHC: No SVHC (25-Jun-2025) Bauform - Transistor: PowerDI3333 Anzahl der Pins: 8Pin(s) Produktpalette: - productTraceability: Yes-Date/Lot Code usEccn: EAR99 Kanaltyp: p-Kanal Betriebstemperatur, max.: 150°C Rds(on)-Prüfspannung: 10V Drain-Source-Durchgangswiderstand: 0.015ohm | auf Bestellung 1670 Stücke: Lieferzeit 14-21 Tag (e) |
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| DMP3035SFG-7 | Diodes Incorporated | MOSFETs MOSFET BVDSS: 25V-30 PowerDI3333-8 T&R 2 | auf Bestellung 4127 Stücke: Lieferzeit 10-14 Tag (e) |
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| DMP3035SFG-7 | DIODES INC. | Description: DIODES INC. - DMP3035SFG-7 - Leistungs-MOSFET, p-Kanal, 30 V, 9.5 A, 0.015 ohm, PowerDI3333, Oberflächenmontage tariffCode: 85411000 Transistormontage: Oberflächenmontage euEccn: NLR Drain-Source-Spannung Vds: 30V rohsCompliant: YES Dauer-Drainstrom Id: 9.5A hazardous: false rohsPhthalatesCompliant: YES Qualifikation: - isCanonical: N Gate-Source-Schwellenspannung, max.: 1.7V Verlustleistung: 2.3W SVHC: No SVHC (25-Jun-2025) Bauform - Transistor: PowerDI3333 Anzahl der Pins: 8Pin(s) Produktpalette: - productTraceability: Yes-Date/Lot Code usEccn: EAR99 Kanaltyp: p-Kanal Betriebstemperatur, max.: 150°C Rds(on)-Prüfspannung: 10V Drain-Source-Durchgangswiderstand: 0.015ohm | auf Bestellung 1670 Stücke: Lieferzeit 14-21 Tag (e) |
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| DMP3035SFG-7 | Diodes Incorporated | Description: MOSFET P-CH 30V 8.5A PWRDI3333-8 Packaging: Cut Tape (CT) Package / Case: 8-PowerVDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 8.5A (Ta) Rds On (Max) @ Id, Vgs: 20mOhm @ 8A, 10V Power Dissipation (Max): 950mW (Ta) Vgs(th) (Max) @ Id: 2.5V @ 250µA Supplier Device Package: PowerDI3333-8 Drive Voltage (Max Rds On, Min Rds On): 5V, 10V Vgs (Max): ±25V Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 17 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1633 pF @ 15 V | auf Bestellung 1275 Stücke: Lieferzeit 10-14 Tag (e) |
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| DMP3036SFG-13 | Diodes Incorporated | MOSFETs P-Ch Enh Mode FET Vdss -30V 25Vgss | auf Bestellung 545 Stücke: Lieferzeit 10-14 Tag (e) |
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| DMP3036SFG-13 | Diodes Zetex | Trans MOSFET P-CH 30V 8.7A 8-Pin PowerDI EP T/R | Produkt ist nicht verfügbar | Mindestbestellmenge: 3000 Stücke Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
| DMP3036SFG-13 | Diodes Incorporated | Description: MOSFET P-CH 30V 8.7A PWRDI3333-8 Gate Charge (Qg) (Max) @ Vgs: 16.5 nC @ 10 V Drain to Source Voltage (Vdss): 30 V Vgs (Max): ±25V Drive Voltage (Max Rds On, Min Rds On): 5V, 10V Supplier Device Package: PowerDI3333-8 Vgs(th) (Max) @ Id: 2.5V @ 250µA Power Dissipation (Max): 950mW (Ta) Rds On (Max) @ Id, Vgs: 20mOhm @ 8A, 10V Current - Continuous Drain (Id) @ 25°C: 8.7A (Ta) FET Type: P-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 8-PowerVDFN Packaging: Tape & Reel (TR) Input Capacitance (Ciss) (Max) @ Vds: 1931 pF @ 15 V | auf Bestellung 9000 Stücke: Lieferzeit 10-14 Tag (e) |
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| DMP3036SFG-13 | Diodes Zetex | Trans MOSFET P-CH 30V 8.7A 8-Pin PowerDI EP T/R | auf Bestellung 6000 Stücke: Lieferzeit 14-21 Tag (e) |
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| DMP3036SFG-13 | Diodes Incorporated | Description: MOSFET P-CH 30V 8.7A PWRDI3333-8 Packaging: Cut Tape (CT) Input Capacitance (Ciss) (Max) @ Vds: 1931 pF @ 15 V Gate Charge (Qg) (Max) @ Vgs: 16.5 nC @ 10 V Drain to Source Voltage (Vdss): 30 V Vgs (Max): ±25V Drive Voltage (Max Rds On, Min Rds On): 5V, 10V Supplier Device Package: PowerDI3333-8 Vgs(th) (Max) @ Id: 2.5V @ 250µA Power Dissipation (Max): 950mW (Ta) Rds On (Max) @ Id, Vgs: 20mOhm @ 8A, 10V Current - Continuous Drain (Id) @ 25°C: 8.7A (Ta) FET Type: P-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 8-PowerVDFN | auf Bestellung 11874 Stücke: Lieferzeit 10-14 Tag (e) |
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| DMP3036SFG-7 | Diodes Incorporated | Description: MOSFET P-CH 30V 8.7A PWRDI3333-8 Packaging: Cut Tape (CT) Package / Case: 8-PowerVDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 8.7A (Ta) Rds On (Max) @ Id, Vgs: 20mOhm @ 8A, 10V Power Dissipation (Max): 950mW (Ta) Vgs(th) (Max) @ Id: 2.5V @ 250µA Supplier Device Package: PowerDI3333-8 Drive Voltage (Max Rds On, Min Rds On): 5V, 10V Vgs (Max): ±25V Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 16.5 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1931 pF @ 15 V | auf Bestellung 223736 Stücke: Lieferzeit 10-14 Tag (e) |
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| DMP3036SFG-7 | Diodes Incorporated | Description: MOSFET P-CH 30V 8.7A PWRDI3333-8 Packaging: Tape & Reel (TR) Package / Case: 8-PowerVDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 8.7A (Ta) Rds On (Max) @ Id, Vgs: 20mOhm @ 8A, 10V Power Dissipation (Max): 950mW (Ta) Vgs(th) (Max) @ Id: 2.5V @ 250µA Supplier Device Package: PowerDI3333-8 Drive Voltage (Max Rds On, Min Rds On): 5V, 10V Vgs (Max): ±25V Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 16.5 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1931 pF @ 15 V | auf Bestellung 222000 Stücke: Lieferzeit 10-14 Tag (e) |
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| DMP3036SFG-7 | Diodes Incorporated | MOSFET P-Ch Enh Mode FET Vdss -30V 25Vgss | auf Bestellung 1604 Stücke: Lieferzeit 10-14 Tag (e) |
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| DMP3036SFG-7 | Diodes Zetex | Trans MOSFET P-CH 30V 8.7A 8-Pin PowerDI EP T/R | Produkt ist nicht verfügbar | Mindestbestellmenge: 2000 Stücke Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
| DMP3036SFV-13 | Diodes Incorporated | Description: MOSFET P-CH 30V 30A POWERDI3333 Packaging: Cut Tape (CT) Package / Case: 8-PowerVDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 30A (Ta) Rds On (Max) @ Id, Vgs: 20mOhm @ 8A, 10V Power Dissipation (Max): 2.3W (Ta) Vgs(th) (Max) @ Id: 2.5V @ 250µA Supplier Device Package: PowerDI3333-8 (Type UX) Drive Voltage (Max Rds On, Min Rds On): 5V, 10V Vgs (Max): ±25V Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 16.5 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1931 pF @ 15 V | auf Bestellung 1727 Stücke: Lieferzeit 10-14 Tag (e) |
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| DMP3036SFV-13 | Diodes Incorporated | MOSFETs MOSFET BVDSS: 25V-30V | auf Bestellung 4473 Stücke: Lieferzeit 10-14 Tag (e) |
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| DMP3036SFV-13 | Diodes Zetex | Trans MOSFET P-CH 30V 8.7A 8-Pin PowerDI EP T/R | Produkt ist nicht verfügbar | Mindestbestellmenge: 3000 Stücke Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
| DMP3036SFV-13 | Diodes Incorporated | Description: MOSFET P-CH 30V 30A POWERDI3333 Packaging: Tape & Reel (TR) Package / Case: 8-PowerVDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 30A (Ta) Rds On (Max) @ Id, Vgs: 20mOhm @ 8A, 10V Power Dissipation (Max): 2.3W (Ta) Vgs(th) (Max) @ Id: 2.5V @ 250µA Supplier Device Package: PowerDI3333-8 (Type UX) Drive Voltage (Max Rds On, Min Rds On): 5V, 10V Vgs (Max): ±25V Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 16.5 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1931 pF @ 15 V | Produkt ist nicht verfügbar | Mindestbestellmenge: 3000 Stücke Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
| DMP3036SFV-7 | Diodes Zetex | Trans MOSFET P-CH 30V 8.7A 8-Pin PowerDI EP T/R | auf Bestellung 16000 Stücke: Lieferzeit 14-21 Tag (e) |
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| DMP3036SFV-7 | Diodes Incorporated | Description: MOSFET P-CH 30V 30A POWERDI3333 Packaging: Cut Tape (CT) Package / Case: 8-PowerVDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 30A (Ta) Rds On (Max) @ Id, Vgs: 20mOhm @ 8A, 10V Power Dissipation (Max): 2.3W (Ta) Vgs(th) (Max) @ Id: 2.5V @ 250µA Supplier Device Package: PowerDI3333-8 (Type UX) Drive Voltage (Max Rds On, Min Rds On): 5V, 10V Vgs (Max): ±25V Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 16.5 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1931 pF @ 15 V | auf Bestellung 20865 Stücke: Lieferzeit 10-14 Tag (e) |
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| DMP3036SFV-7 | Diodes Zetex | Trans MOSFET P-CH 30V 8.7A 8-Pin PowerDI EP T/R | Produkt ist nicht verfügbar | Mindestbestellmenge: 2000 Stücke Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
| DMP3036SFV-7 | DIODES INCORPORATED | Category: SMD P channel transistors Description: Transistor: P-MOSFET; unipolar; -30V; -7A; Idm: -80A; 2.3W Mounting: SMD Case: PowerDI3333-8 Type of transistor: P-MOSFET Pulsed drain current: -80A Drain-source voltage: -30V Drain current: -7A Gate charge: 16.5nC On-state resistance: 29mΩ Power dissipation: 2.3W Gate-source voltage: ±25V Kind of package: 7 inch reel; tape Polarisation: unipolar Kind of channel: enhancement | auf Bestellung 1907 Stücke: Lieferzeit 14-21 Tag (e) |
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| DMP3036SFV-7 | Diodes Incorporated | Description: MOSFET P-CH 30V 30A POWERDI3333 Packaging: Tape & Reel (TR) Package / Case: 8-PowerVDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 30A (Ta) Rds On (Max) @ Id, Vgs: 20mOhm @ 8A, 10V Power Dissipation (Max): 2.3W (Ta) Vgs(th) (Max) @ Id: 2.5V @ 250µA Supplier Device Package: PowerDI3333-8 (Type UX) Drive Voltage (Max Rds On, Min Rds On): 5V, 10V Vgs (Max): ±25V Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 16.5 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1931 pF @ 15 V | auf Bestellung 20000 Stücke: Lieferzeit 10-14 Tag (e) |
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| DMP3036SFV-7 | Diodes Incorporated | MOSFETs MOSFET BVDSS: 25V-30V | auf Bestellung 1907 Stücke: Lieferzeit 10-14 Tag (e) |
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| DMP3036SFVQ-13 | Diodes Incorporated | Description: MOSFET BVDSS: 25V~30V PowerDI333 Packaging: Bulk Package / Case: 8-PowerVDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 8.7A (Ta), 30A (Tc) Rds On (Max) @ Id, Vgs: 20mOhm @ 8A, 10V Power Dissipation (Max): 900mW (Ta) Vgs(th) (Max) @ Id: 2.5V @ 250µA Supplier Device Package: PowerDI3333-8 (Type UX) Grade: Automotive Drive Voltage (Max Rds On, Min Rds On): 5V, 10V Vgs (Max): ±25V Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 16.5 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1931 pF @ 15 V Qualification: AEC-Q101 | Produkt ist nicht verfügbar | Mindestbestellmenge: 3000 Stücke Im Einkaufswagen Stück im Wert von UAH |