Produkte > TSM
| Bezeichnung | Hersteller | Beschreibung | Verfügbarkeit | Privatkunde | ||||||||||||||||||
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| TSM150NB04CR RLG | Taiwan Semiconductor | MOSFET 40V, 41A, Single N-Channel Power MOSFET | Produkt ist nicht verfügbar | Mindestbestellmenge: 5000 Stücke Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||||||
| TSM150NB04CR RLG | Taiwan Semiconductor | Trans MOSFET N-CH 40V 41A 8-Pin PDFN EP T/R | auf Bestellung 2500 Stücke: Lieferzeit 14-21 Tag (e) |
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| TSM150NB04CR RLG | Taiwan Semiconductor Corporation | Description: MOSFET N-CH 40V 10A/41A 8PDFN Current - Continuous Drain (Id) @ 25°C: 10A (Ta), 41A (Tc) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Package / Case: 8-PowerLDFN Packaging: Tape & Reel (TR) Input Capacitance (Ciss) (Max) @ Vds: 1092 pF @ 20 V Gate Charge (Qg) (Max) @ Vgs: 19 nC @ 10 V Drain to Source Voltage (Vdss): 40 V Vgs (Max): ±20V Drive Voltage (Max Rds On, Min Rds On): 10V Part Status: Active Supplier Device Package: 8-PDFN (5.2x5.75) Vgs(th) (Max) @ Id: 4V @ 250µA Power Dissipation (Max): 3.1W (Ta), 56W (Tc) Rds On (Max) @ Id, Vgs: 15mOhm @ 10A, 10V | auf Bestellung 5000 Stücke: Lieferzeit 10-14 Tag (e) |
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| TSM150NB04DCR RLG | Taiwan Semiconductor Corporation | Description: MOSFET 2N-CH 40V 8A/38A 8DFN Packaging: Tape & Reel (TR) Package / Case: 8-PowerTDFN Mounting Type: Surface Mount Configuration: 2 N-Channel (Dual) Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 2W (Ta), 40W (Tc) Drain to Source Voltage (Vdss): 40V Current - Continuous Drain (Id) @ 25°C: 8A (Ta), 38A (Tc) Input Capacitance (Ciss) (Max) @ Vds: 1132pF @ 20V Rds On (Max) @ Id, Vgs: 15mOhm @ 8A, 10V Gate Charge (Qg) (Max) @ Vgs: 18nC @ 10V Vgs(th) (Max) @ Id: 4V @ 250µA Supplier Device Package: 8-PDFN (5x6) Part Status: Active | Produkt ist nicht verfügbar | Mindestbestellmenge: 2500 Stücke Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||||||
| TSM150NB04DCR RLG | Taiwan Semiconductor | MOSFETs 40V, 38A, Dual N-Channel Power MOSFET | auf Bestellung 4964 Stücke: Lieferzeit 10-14 Tag (e) |
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| TSM150NB04DCR RLG | Taiwan Semiconductor Corporation | Description: MOSFET 2N-CH 40V 8A/38A 8DFN Packaging: Cut Tape (CT) Package / Case: 8-PowerTDFN Mounting Type: Surface Mount Configuration: 2 N-Channel (Dual) Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 2W (Ta), 40W (Tc) Drain to Source Voltage (Vdss): 40V Current - Continuous Drain (Id) @ 25°C: 8A (Ta), 38A (Tc) Input Capacitance (Ciss) (Max) @ Vds: 1132pF @ 20V Rds On (Max) @ Id, Vgs: 15mOhm @ 8A, 10V Gate Charge (Qg) (Max) @ Vgs: 18nC @ 10V Vgs(th) (Max) @ Id: 4V @ 250µA Supplier Device Package: 8-PDFN (5x6) Part Status: Active | auf Bestellung 423 Stücke: Lieferzeit 10-14 Tag (e) |
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| TSM150NB04LCR | Taiwan Semiconductor | Trans MOSFET N-CH 40V 41A 8-Pin PDFN EP T/R | Produkt ist nicht verfügbar | Mindestbestellmenge: 5000 Stücke Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||||||
| TSM150NB04LCR RLG | Taiwan Semiconductor | Trans MOSFET N-CH 40V 10A 8-Pin PDFN EP T/R | Produkt ist nicht verfügbar | Mindestbestellmenge: 5000 Stücke Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||||||
| TSM150NB04LCR RLG | Taiwan Semiconductor Corporation | Description: MOSFET N-CH 40V 10A/41A 8PDFN Drain to Source Voltage (Vdss): 40 V Vgs (Max): ±20V Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Supplier Device Package: 8-PDFN (5.2x5.75) Vgs(th) (Max) @ Id: 2.5V @ 250µA Power Dissipation (Max): 3.1W (Ta), 56W (Tc) Rds On (Max) @ Id, Vgs: 15mOhm @ 10A, 10V Current - Continuous Drain (Id) @ 25°C: 10A (Ta), 41A (Tc) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Package / Case: 8-PowerLDFN Packaging: Tape & Reel (TR) Input Capacitance (Ciss) (Max) @ Vds: 966 pF @ 20 V Gate Charge (Qg) (Max) @ Vgs: 18 nC @ 10 V | Produkt ist nicht verfügbar | Mindestbestellmenge: 2500 Stücke Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||||||
| TSM150NB04LCR RLG | Taiwan Semiconductor | Trans MOSFET N-CH 40V 10A 8-Pin PDFN EP T/R | auf Bestellung 5000 Stücke: Lieferzeit 14-21 Tag (e) |
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| TSM150NB04LCR RLG | Taiwan Semiconductor Corporation | Description: MOSFET N-CH 40V 10A/41A 8PDFN Input Capacitance (Ciss) (Max) @ Vds: 966 pF @ 20 V Gate Charge (Qg) (Max) @ Vgs: 18 nC @ 10 V Drain to Source Voltage (Vdss): 40 V Vgs (Max): ±20V Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Supplier Device Package: 8-PDFN (5.2x5.75) Vgs(th) (Max) @ Id: 2.5V @ 250µA Power Dissipation (Max): 3.1W (Ta), 56W (Tc) Rds On (Max) @ Id, Vgs: 15mOhm @ 10A, 10V Current - Continuous Drain (Id) @ 25°C: 10A (Ta), 41A (Tc) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Package / Case: 8-PowerLDFN Packaging: Cut Tape (CT) | auf Bestellung 455 Stücke: Lieferzeit 10-14 Tag (e) |
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| TSM150NB04LCR RLG | Taiwan Semiconductor | MOSFET 40V 41A 15mOhm N-Chan Pwr MOSFET | Produkt ist nicht verfügbar | Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||||||
| TSM150NB04LCV RGG | Taiwan Semiconductor Corporation | Description: 40V, 36A, SINGLE N-CHANNEL POWER Input Capacitance (Ciss) (Max) @ Vds: 1013 pF @ 20 V Gate Charge (Qg) (Max) @ Vgs: 19 nC @ 10 V Drain to Source Voltage (Vdss): 40 V Vgs (Max): ±20V Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Part Status: Active Supplier Device Package: 8-PDFN (3.15x3.1) Vgs(th) (Max) @ Id: 2.5V @ 250µA Power Dissipation (Max): 1.9W (Ta), 39W (Tc) Rds On (Max) @ Id, Vgs: 15mOhm @ 8A, 10V Current - Continuous Drain (Id) @ 25°C: 8A (Ta), 36A (Tc) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 8-PowerWDFN Packaging: Cut Tape (CT) | auf Bestellung 9938 Stücke: Lieferzeit 10-14 Tag (e) |
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| TSM150NB04LCV RGG | Taiwan Semiconductor Corporation | Description: 40V, 36A, SINGLE N-CHANNEL POWER Vgs(th) (Max) @ Id: 2.5V @ 250µA Power Dissipation (Max): 1.9W (Ta), 39W (Tc) Rds On (Max) @ Id, Vgs: 15mOhm @ 8A, 10V Current - Continuous Drain (Id) @ 25°C: 8A (Ta), 36A (Tc) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 8-PowerWDFN Packaging: Tape & Reel (TR) Input Capacitance (Ciss) (Max) @ Vds: 1013 pF @ 20 V Gate Charge (Qg) (Max) @ Vgs: 19 nC @ 10 V Drain to Source Voltage (Vdss): 40 V Vgs (Max): ±20V Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Part Status: Active Supplier Device Package: 8-PDFN (3.15x3.1) | auf Bestellung 5000 Stücke: Lieferzeit 10-14 Tag (e) |
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| TSM150NB04LDCR RLG | Taiwan Semiconductor Corporation | Description: MOSFET 2N-CH 40V 8A/37A 8DFN Packaging: Cut Tape (CT) Package / Case: 8-PowerTDFN Mounting Type: Surface Mount Configuration: 2 N-Channel (Dual) Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 2W (Ta), 40W (Tc) Drain to Source Voltage (Vdss): 40V Current - Continuous Drain (Id) @ 25°C: 8A (Ta), 37A (Tc) Input Capacitance (Ciss) (Max) @ Vds: 966pF @ 20V Rds On (Max) @ Id, Vgs: 15mOhm @ 8A, 10V Gate Charge (Qg) (Max) @ Vgs: 18nC @ 10V Vgs(th) (Max) @ Id: 2.5V @ 250µA Supplier Device Package: 8-PDFN (5x6) Part Status: Active | auf Bestellung 7450 Stücke: Lieferzeit 10-14 Tag (e) |
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| TSM150NB04LDCR RLG | Taiwan Semiconductor | MOSFETs 40V, 37A, Dual N-Channel Power MOSFET | auf Bestellung 2610 Stücke: Lieferzeit 10-14 Tag (e) |
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| TSM150NB04LDCR RLG | Taiwan Semiconductor Corporation | Description: MOSFET 2N-CH 40V 8A/37A 8DFN Packaging: Tape & Reel (TR) Package / Case: 8-PowerTDFN Mounting Type: Surface Mount Configuration: 2 N-Channel (Dual) Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 2W (Ta), 40W (Tc) Drain to Source Voltage (Vdss): 40V Current - Continuous Drain (Id) @ 25°C: 8A (Ta), 37A (Tc) Input Capacitance (Ciss) (Max) @ Vds: 966pF @ 20V Rds On (Max) @ Id, Vgs: 15mOhm @ 8A, 10V Gate Charge (Qg) (Max) @ Vgs: 18nC @ 10V Vgs(th) (Max) @ Id: 2.5V @ 250µA Supplier Device Package: 8-PDFN (5x6) Part Status: Active | auf Bestellung 5000 Stücke: Lieferzeit 10-14 Tag (e) |
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| TSM150P03PQ33 | Taiwan Semiconductor Corporation | Description: -30, -36, SINGLE P-CHANNEL Packaging: Tape & Reel (TR) Package / Case: 8-PowerWDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 10A (Ta), 36A (Tc) Rds On (Max) @ Id, Vgs: 15mOhm @ 10A, 10V Power Dissipation (Max): 2.3W (Ta), 27.8W (Tc) Vgs(th) (Max) @ Id: 2.5V @ 250µA Supplier Device Package: 8-PDFN (3.1x3.1) Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 29.3 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1829 pF @ 15 V | Produkt ist nicht verfügbar | Mindestbestellmenge: 10000 Stücke Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||||||
| TSM150P03PQ33 RGG | Taiwan Semiconductor Corporation | Description: MOSFET P-CH 30V 36A 8PDFN Packaging: Cut Tape (CT) Package / Case: 8-PowerWDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 36A (Tc) Rds On (Max) @ Id, Vgs: 15mOhm @ 10A, 10V Power Dissipation (Max): 27.8W (Tc) Vgs(th) (Max) @ Id: 2.5V @ 250µA Supplier Device Package: 8-PDFN (3.1x3.1) Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 29.3 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1829 pF @ 15 V | auf Bestellung 19678 Stücke: Lieferzeit 10-14 Tag (e) |
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| TSM150P03PQ33 RGG | Taiwan Semiconductor | MOSFETs -30, -36, Single P-Channel | Produkt ist nicht verfügbar | Mindestbestellmenge: 2 Stücke Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||||||
| TSM150P03PQ33 RGG | Taiwan Semiconductor | Trans MOSFET P-CH 30V 10A 8-Pin P-DFN EP T/R | auf Bestellung 4426 Stücke: Lieferzeit 14-21 Tag (e) |
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| TSM150P03PQ33 RGG | Taiwan Semiconductor Corporation | Description: MOSFET P-CH 30V 36A 8PDFN Packaging: Tape & Reel (TR) Package / Case: 8-PowerWDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 36A (Tc) Rds On (Max) @ Id, Vgs: 15mOhm @ 10A, 10V Power Dissipation (Max): 27.8W (Tc) Vgs(th) (Max) @ Id: 2.5V @ 250µA Supplier Device Package: 8-PDFN (3.1x3.1) Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 29.3 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1829 pF @ 15 V | auf Bestellung 15000 Stücke: Lieferzeit 10-14 Tag (e) |
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| TSM150P03PQ33 RGG | Taiwan Semiconductor | Trans MOSFET P-CH 30V 10A 8-Pin P-DFN EP T/R | Produkt ist nicht verfügbar | Mindestbestellmenge: 10000 Stücke Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||||||
| TSM150P04LCS | Taiwan Semiconductor | Trans MOSFET P-CH 40V 22A 8-Pin SOP T/R | Produkt ist nicht verfügbar | Mindestbestellmenge: 5000 Stücke Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||||||
| TSM150P04LCS | Taiwan Semiconductor Corporation | Description: -40, -22, SINGLE P-CHANNEL Packaging: Tape & Reel (TR) Package / Case: 8-SOIC (0.154", 3.90mm Width) Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 9A (Ta), 22A (Tc) Rds On (Max) @ Id, Vgs: 15mOhm @ 9A, 10V Power Dissipation (Max): 2.2W (Ta), 12.5W (Tc) Vgs(th) (Max) @ Id: 2.5V @ 250µA Supplier Device Package: 8-SOP Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 40 V Gate Charge (Qg) (Max) @ Vgs: 48 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 2783 pF @ 20 V | Produkt ist nicht verfügbar | Mindestbestellmenge: 5000 Stücke Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||||||
| TSM150P04LCS | Taiwan Semiconductor | LDO Voltage Regulators -40V, -22A, Single P-Channel Power MOSFET | Produkt ist nicht verfügbar | Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||||||
| TSM150P04LCS RLG | Taiwan Semiconductor | Trans MOSFET P-CH 40V 22A 8-Pin SOP T/R | Produkt ist nicht verfügbar | Mindestbestellmenge: 5000 Stücke Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||||||
| TSM150P04LCS RLG | Taiwan Semiconductor | Trans MOSFET P-CH 40V 22A 8-Pin SOP T/R | Produkt ist nicht verfügbar | Mindestbestellmenge: 5000 Stücke Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||||||
| TSM150P04LCS RLG | Taiwan Semiconductor Corporation | Description: MOSFET P-CHANNEL 40V 22A 8SOP Packaging: Tape & Reel (TR) Package / Case: 8-SOIC (0.154", 3.90mm Width) Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 22A (Tc) Rds On (Max) @ Id, Vgs: 15mOhm @ 9A, 10V Power Dissipation (Max): 12.5W (Tc) Vgs(th) (Max) @ Id: 2.5V @ 250µA Supplier Device Package: 8-SOP Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 40 V Gate Charge (Qg) (Max) @ Vgs: 48 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 2783 pF @ 20 V | auf Bestellung 55000 Stücke: Lieferzeit 10-14 Tag (e) |
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| TSM150P04LCS RLG | Taiwan Semiconductor | MOSFETs -40, -22, Single P-Channel | auf Bestellung 8046 Stücke: Lieferzeit 10-14 Tag (e) |
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| TSM150P04LCS RLG | Taiwan Semiconductor | Trans MOSFET P-CH 40V 22A 8-Pin SOP T/R | Produkt ist nicht verfügbar | Mindestbestellmenge: 5000 Stücke Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||||||
| TSM150P04LCS RLG | Taiwan Semiconductor | Trans MOSFET P-CH 40V 22A 8-Pin SOP T/R | auf Bestellung 2500 Stücke: Lieferzeit 14-21 Tag (e) |
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| TSM150P04LCS RLG | Taiwan Semiconductor Corporation | Description: MOSFET P-CHANNEL 40V 22A 8SOP Packaging: Cut Tape (CT) Package / Case: 8-SOIC (0.154", 3.90mm Width) Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 22A (Tc) Rds On (Max) @ Id, Vgs: 15mOhm @ 9A, 10V Power Dissipation (Max): 12.5W (Tc) Vgs(th) (Max) @ Id: 2.5V @ 250µA Supplier Device Package: 8-SOP Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 40 V Gate Charge (Qg) (Max) @ Vgs: 48 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 2783 pF @ 20 V | auf Bestellung 59209 Stücke: Lieferzeit 10-14 Tag (e) |
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| TSM152J-TR | HAK | 07+; | auf Bestellung 30000 Stücke: Lieferzeit 21-28 Tag (e) | Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||||||
| TSM157PW1U | auf Bestellung 12000 Stücke: Lieferzeit 21-28 Tag (e) | Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||||||||
| TSM157PW2B | auf Bestellung 26934 Stücke: Lieferzeit 21-28 Tag (e) | Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||||||||
| TSM157PW2B1575 | auf Bestellung 26934 Stücke: Lieferzeit 21-28 Tag (e) | Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||||||||
| TSM157PW2B1575.42MHZ | auf Bestellung 26934 Stücke: Lieferzeit 21-28 Tag (e) | Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||||||||
| TSM157PW4U | SANYO | QFN? | auf Bestellung 3940 Stücke: Lieferzeit 21-28 Tag (e) | Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||||||
| TSM157W1U | auf Bestellung 24000 Stücke: Lieferzeit 21-28 Tag (e) | Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||||||||
| TSM15N03PQ33 | Taiwan Semiconductor | MOSFET | Produkt ist nicht verfügbar | Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||||||
| TSM15N03PQ33 RFG | Taiwan Semiconductor | MOSFET | Produkt ist nicht verfügbar | Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||||||
| TSM15N15CP | Taiwan Semiconductor | MOSFET | Produkt ist nicht verfügbar | Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||||||
| TSM15N50CI C0G | Taiwan Semiconductor Corporation | Description: MOSFET N-CH 500V 14A ITO220AB Packaging: Tube Package / Case: TO-220-3 Full Pack, Isolated Tab Mounting Type: Through Hole Operating Temperature: 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 14A (Tc) Rds On (Max) @ Id, Vgs: 440mOhm @ 7A, 10V Vgs(th) (Max) @ Id: 4V @ 250µA Supplier Device Package: ITO-220AB Part Status: Obsolete Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±30V Drain to Source Voltage (Vdss): 500 V Gate Charge (Qg) (Max) @ Vgs: 39 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 2263 pF @ 25 V | Produkt ist nicht verfügbar | Mindestbestellmenge: 4000 Stücke Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||||||
| TSM15N50CI C0G | Taiwan Semiconductor | MOSFET 500V, 14A, Single N-Channel Power MOSFET | Produkt ist nicht verfügbar | Mindestbestellmenge: 4000 Stücke Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||||||
| TSM15N50CZ C0G | Taiwan Semiconductor Corporation | Description: MOSFET N-CHANNEL 500V 14A TO220 Packaging: Tube Package / Case: TO-220-3 Mounting Type: Through Hole Operating Temperature: 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 14A (Tc) Rds On (Max) @ Id, Vgs: 440mOhm @ 7A, 10V Vgs(th) (Max) @ Id: 4V @ 250µA Supplier Device Package: TO-220 Part Status: Obsolete Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±30V Drain to Source Voltage (Vdss): 500 V Gate Charge (Qg) (Max) @ Vgs: 39 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 2263 pF @ 25 V | Produkt ist nicht verfügbar | Mindestbestellmenge: 4000 Stücke Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||||||
| TSM15N50CZ C0G | Taiwan Semiconductor | MOSFET 500V, 14A, Single N-Channel Power MOSFET | Produkt ist nicht verfügbar | Mindestbestellmenge: 4000 Stücke Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||||||
| TSM1602-20B | TSM1602-20B ЖКИ | auf Bestellung 10 Stücke: Lieferzeit 7-21 Tag (e) | Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||||||
| TSM160N10CZ | Taiwan Semiconductor | MOSFETs Power MOSFET, N-CHAN 100V, 160A, 5.5mOhm | Produkt ist nicht verfügbar | Mindestbestellmenge: 4000 Stücke Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||||||
| TSM160N10CZ C0 | Taiwan Semiconductor | MOSFET 100V N Channel Power Mosfet | Produkt ist nicht verfügbar | Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||||||
| TSM160N10CZ C0G | Taiwan Semiconductor | Trans MOSFET N-CH 100V 14.2A 3-Pin(3+Tab) TO-220 Tube | auf Bestellung 120 Stücke: Lieferzeit 14-21 Tag (e) |
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| TSM160N10CZ C0G | Taiwan Semiconductor | MOSFET 100V 160A Single N-C hannel Power MOSFET | Produkt ist nicht verfügbar | Mindestbestellmenge: 4000 Stücke Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||||||
| TSM160N10CZ C0G | Taiwan Semiconductor | Trans MOSFET N-CH 100V 14.2A 3-Pin(3+Tab) TO-220 Tube | auf Bestellung 120 Stücke: Lieferzeit 14-21 Tag (e) |
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| TSM160N10CZ C0G | Taiwan Semiconductor Corporation | Description: MOSFET N-CH 100V 160A TO220 Packaging: Tube Package / Case: TO-220-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 160A (Tc) Rds On (Max) @ Id, Vgs: 5.5mOhm @ 30A, 10V Power Dissipation (Max): 300W (Tc) Vgs(th) (Max) @ Id: 4V @ 250µA Supplier Device Package: TO-220 Part Status: Obsolete Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 100 V Gate Charge (Qg) (Max) @ Vgs: 154 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 9840 pF @ 30 V | auf Bestellung 13 Stücke: Lieferzeit 10-14 Tag (e) |
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| TSM160N10LCR | Taiwan Semiconductor Corporation | Description: 100V, 46A, SINGLE N-CHANNEL POWE Input Capacitance (Ciss) (Max) @ Vds: 4431 pF @ 50 V Gate Charge (Qg) (Max) @ Vgs: 73 nC @ 10 V Drain to Source Voltage (Vdss): 100 V Vgs (Max): ±20V Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Part Status: Active Supplier Device Package: 8-PDFN (5x6) Vgs(th) (Max) @ Id: 2.5V @ 250µA Rds On (Max) @ Id, Vgs: 16mOhm @ 8A, 10V FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 8-PowerTDFN Packaging: Tape & Reel (TR) Power Dissipation (Max): 2.6W (Ta), 83W (Tc) Current - Continuous Drain (Id) @ 25°C: 8A (Ta), 46A (Tc) | Produkt ist nicht verfügbar | Mindestbestellmenge: 5000 Stücke Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||||||
| TSM160N10LCR RLG | Taiwan Semiconductor | Trans MOSFET N-CH 100V 46A 8-Pin PDFN EP T/R | Produkt ist nicht verfügbar | Mindestbestellmenge: 5000 Stücke Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||||||
| TSM160N10LCR RLG | Taiwan Semiconductor Corporation | Description: MOSFET N-CH 100V 46A 8PDFN Packaging: Cut Tape (CT) Package / Case: 8-PowerTDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 46A (Tc) Rds On (Max) @ Id, Vgs: 16mOhm @ 8A, 10V Power Dissipation (Max): 83W (Tc) Vgs(th) (Max) @ Id: 2.5V @ 250µA Supplier Device Package: 8-PDFN (5x6) Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 100 V Gate Charge (Qg) (Max) @ Vgs: 73 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 4431 pF @ 50 V | auf Bestellung 9879 Stücke: Lieferzeit 10-14 Tag (e) |
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| TSM160N10LCR RLG | Taiwan Semiconductor | Trans MOSFET N-CH 100V 46A 8-Pin PDFN EP T/R | Produkt ist nicht verfügbar | Mindestbestellmenge: 5000 Stücke Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||||||
| TSM160N10LCR RLG | Taiwan Semiconductor | MOSFETs 100V, 46A, Single N-Channel Power MOSFET | auf Bestellung 2078 Stücke: Lieferzeit 10-14 Tag (e) |
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| TSM160N10LCR RLG | Taiwan Semiconductor | Trans MOSFET N-CH 100V 46A 8-Pin PDFN EP T/R | Produkt ist nicht verfügbar | Mindestbestellmenge: 5000 Stücke Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||||||
| TSM160N10LCR RLG | Taiwan Semiconductor Corporation | Description: MOSFET N-CH 100V 46A 8PDFN Packaging: Tape & Reel (TR) Package / Case: 8-PowerTDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 46A (Tc) Rds On (Max) @ Id, Vgs: 16mOhm @ 8A, 10V Power Dissipation (Max): 83W (Tc) Vgs(th) (Max) @ Id: 2.5V @ 250µA Supplier Device Package: 8-PDFN (5x6) Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 100 V Gate Charge (Qg) (Max) @ Vgs: 73 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 4431 pF @ 50 V | auf Bestellung 7500 Stücke: Lieferzeit 10-14 Tag (e) |
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| TSM160P02CS | Taiwan Semiconductor Corporation | Description: -20, -11, SINGLE P-CHANNEL Input Capacitance (Ciss) (Max) @ Vds: 2320 pF @ 15 V Gate Charge (Qg) (Max) @ Vgs: 27 nC @ 4.5 V Drain to Source Voltage (Vdss): 20 V Vgs (Max): ±10V Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V Supplier Device Package: 8-SOP Vgs(th) (Max) @ Id: 1V @ 250µA Power Dissipation (Max): 2.5W (Tc) Rds On (Max) @ Id, Vgs: 16mOhm @ 6A, 4.5V Current - Continuous Drain (Id) @ 25°C: 11A (Tc) FET Type: P-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 8-SOIC (0.154", 3.90mm Width) Packaging: Tape & Reel (TR) | Produkt ist nicht verfügbar | Mindestbestellmenge: 5000 Stücke Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||||||
| TSM160P02CS | Taiwan Semiconductor Co., Ltd. | MOSFET P-CHANNEL 20V 11A 8SOP TSM160P02CS RLG; TSM160P02CS-RLG; TSM160P02CS TTSM160p02cs Anzahl je Verpackung: 10 Stücke | auf Bestellung 200 Stücke: Lieferzeit 7-14 Tag (e) |
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| TSM160P02CS RLG | Taiwan Semiconductor | Trans MOSFET P-CH 20V 11A 8-Pin SOP T/R | Produkt ist nicht verfügbar | Mindestbestellmenge: 5000 Stücke Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||||||
| TSM160P02CS RLG | Taiwan Semiconductor | Trans MOSFET P-CH 20V 11A 8-Pin SOP T/R | auf Bestellung 5000 Stücke: Lieferzeit 14-21 Tag (e) |
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| TSM160P02CS RLG | Taiwan Semiconductor Corporation | Description: MOSFET P-CHANNEL 20V 11A 8SOP Packaging: Cut Tape (CT) Package / Case: 8-SOIC (0.154", 3.90mm Width) Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 11A (Tc) Rds On (Max) @ Id, Vgs: 16mOhm @ 6A, 4.5V Power Dissipation (Max): 2.5W (Tc) Vgs(th) (Max) @ Id: 1V @ 250µA Supplier Device Package: 8-SOP Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V Vgs (Max): ±10V Drain to Source Voltage (Vdss): 20 V Gate Charge (Qg) (Max) @ Vgs: 27 nC @ 4.5 V Input Capacitance (Ciss) (Max) @ Vds: 2320 pF @ 15 V | auf Bestellung 5370 Stücke: Lieferzeit 10-14 Tag (e) |
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| TSM160P02CS RLG | Taiwan Semiconductor | MOSFET -20, -11, Single P-Channel | auf Bestellung 3157 Stücke: Lieferzeit 10-14 Tag (e) |
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| TSM160P02CS RLG | Taiwan Semiconductor | Trans MOSFET P-CH 20V 11A 8-Pin SOP T/R | auf Bestellung 5000 Stücke: Lieferzeit 14-21 Tag (e) |
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| TSM160P02CS RLG | Taiwan Semiconductor | Trans MOSFET P-CH 20V 11A 8-Pin SOP T/R | auf Bestellung 319 Stücke: Lieferzeit 14-21 Tag (e) | Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||||||
| TSM160P02CS RLG | Taiwan Semiconductor | Trans MOSFET P-CH 20V 11A 8-Pin SOP T/R | Produkt ist nicht verfügbar | Mindestbestellmenge: 5000 Stücke Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||||||
| TSM160P02CS RLG | Taiwan Semiconductor | Trans MOSFET P-CH 20V 11A 8-Pin SOP T/R | auf Bestellung 329 Stücke: Lieferzeit 14-21 Tag (e) | Mindestbestellmenge: 27 Stücke Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||||||
| TSM160P02CS RLG | Taiwan Semiconductor Corporation | Description: MOSFET P-CHANNEL 20V 11A 8SOP Packaging: Tape & Reel (TR) Package / Case: 8-SOIC (0.154", 3.90mm Width) Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 11A (Tc) Rds On (Max) @ Id, Vgs: 16mOhm @ 6A, 4.5V Power Dissipation (Max): 2.5W (Tc) Vgs(th) (Max) @ Id: 1V @ 250µA Supplier Device Package: 8-SOP Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V Vgs (Max): ±10V Drain to Source Voltage (Vdss): 20 V Gate Charge (Qg) (Max) @ Vgs: 27 nC @ 4.5 V Input Capacitance (Ciss) (Max) @ Vds: 2320 pF @ 15 V | auf Bestellung 2500 Stücke: Lieferzeit 10-14 Tag (e) |
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| TSM160P02CS RLG | Taiwan Semiconductor | Trans MOSFET P-CH 20V 11A 8-Pin SOP T/R | auf Bestellung 2500 Stücke: Lieferzeit 14-21 Tag (e) |
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| TSM160P02CS RLG | Taiwan Semiconductor | Trans MOSFET P-CH 20V 11A 8-Pin SOP T/R | auf Bestellung 5000 Stücke: Lieferzeit 14-21 Tag (e) |
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| TSM160P04LCRH | Taiwan Semiconductor | Taiwan Semiconductor -40V, -51A, Single P-Channel Power MOSFET | Produkt ist nicht verfügbar | Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||||||
| TSM160P04LCRH RLG | Taiwan Semiconductor | Trans MOSFET P-CH 40V 51A Automotive AEC-Q101 8-Pin PDFN EP T/R | Produkt ist nicht verfügbar | Mindestbestellmenge: 5000 Stücke Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||||||
| TSM160P04LCRH RLG | Taiwan Semiconductor | MOSFET -40V -51A Single P-C hannel Power MOSFET | Produkt ist nicht verfügbar | Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||||||
| TSM160P04LCRHRLG | Taiwan Semiconductor Corporation | Description: MOSFET P-CH 40V 51A 8PDFN Packaging: Tape & Reel (TR) Package / Case: 8-PowerTDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 51A (Tc) Rds On (Max) @ Id, Vgs: 16mOhm @ 10A, 10V Power Dissipation (Max): 69W (Tc) Vgs(th) (Max) @ Id: 2.5V @ 250µA Supplier Device Package: 8-PDFN (5x6) Grade: Automotive Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 40 V Gate Charge (Qg) (Max) @ Vgs: 48 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 2712 pF @ 20 V Qualification: AEC-Q101 | Produkt ist nicht verfügbar | Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||||||
| TSM16A | Essentra Components | Description: TAP CAP YELLOW 0.63" H Packaging: Bulk Color: Yellow Size / Dimension: 0.63" H (16.0mm) Type: Tap Cap | auf Bestellung 5000 Stücke: Lieferzeit 10-14 Tag (e) |
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| TSM170N06CH | Taiwan Semiconductor Corporation | Description: 60V, 38A, SINGLE N-CHANNEL POWER Packaging: Tube Part Status: Active Package / Case: TO-251-3 Short Leads, IPak, TO-251AA Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 38A (Tc) Rds On (Max) @ Id, Vgs: 17mOhm @ 20A, 10V Power Dissipation (Max): 46W (Tc) Vgs(th) (Max) @ Id: 2.5V @ 250µA Supplier Device Package: TO-251 (IPAK) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 60 V Gate Charge (Qg) (Max) @ Vgs: 15 nC @ 4.5 V Input Capacitance (Ciss) (Max) @ Vds: 900 pF @ 25 V | Produkt ist nicht verfügbar | Mindestbestellmenge: 15000 Stücke Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||||||
| TSM170N06CH C5G | Taiwan Semiconductor | MOSFETs 60V, 38A, Single N-Channel Power MOSFET | Produkt ist nicht verfügbar | Mindestbestellmenge: 15000 Stücke Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||||||
| TSM170N06CH C5G | Taiwan Semiconductor Corporation | Description: MOSFET N-CHANNEL 60V 38A TO251 Packaging: Tube Package / Case: TO-251-3 Stub Leads, IPak Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 38A (Tc) Rds On (Max) @ Id, Vgs: 17mOhm @ 20A, 10V Power Dissipation (Max): 46W (Tc) Vgs(th) (Max) @ Id: 2.5V @ 250µA Supplier Device Package: TO-251S (IPAK SL) Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 60 V Gate Charge (Qg) (Max) @ Vgs: 28.5 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 900 pF @ 25 V | auf Bestellung 2132 Stücke: Lieferzeit 10-14 Tag (e) |
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| TSM170N06CH X0G | Taiwan Semiconductor | MOSFETs 60V, 38A, Single N-Channel Power MOSFET | Produkt ist nicht verfügbar | Mindestbestellmenge: 15000 Stücke Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||||||
| TSM170N06CP | Taiwan Semiconductor Corporation | Description: 60V, 38A, SINGLE N-CHANNEL POWER Packaging: Tape & Reel (TR) Part Status: Active Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 38A (Tc) Rds On (Max) @ Id, Vgs: 17mOhm @ 20A, 10V Power Dissipation (Max): 46W (Tc) Vgs(th) (Max) @ Id: 2.5V @ 250µA Supplier Device Package: TO-252 (DPAK) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 60 V Gate Charge (Qg) (Max) @ Vgs: 15 nC @ 4.5 V Input Capacitance (Ciss) (Max) @ Vds: 900 pF @ 25 V | Produkt ist nicht verfügbar | Mindestbestellmenge: 5000 Stücke Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||||||
| TSM170N06CP ROG | Taiwan Semiconductor | MOSFETs 60V, 38A, Single N-Channel Power MOSFET | auf Bestellung 10666 Stücke: Lieferzeit 10-14 Tag (e) |
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| TSM170N06CP ROG | Taiwan Semiconductor Corporation | Description: MOSFET N-CHANNEL 60V 38A TO252 Packaging: Cut Tape (CT) Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 38A (Tc) Rds On (Max) @ Id, Vgs: 17mOhm @ 20A, 10V Power Dissipation (Max): 46W (Tc) Vgs(th) (Max) @ Id: 2.5V @ 250µA Supplier Device Package: TO-252 (DPAK) Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 60 V Gate Charge (Qg) (Max) @ Vgs: 28.5 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 900 pF @ 25 V | auf Bestellung 96850 Stücke: Lieferzeit 10-14 Tag (e) |
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| TSM170N06CP ROG | Taiwan Semiconductor | MOSFET N-CHANNEL 60V 38A TO252 Транзистори | Produkt ist nicht verfügbar | Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||||||
| TSM170N06CP ROG | Taiwan Semiconductor Corporation | Description: MOSFET N-CHANNEL 60V 38A TO252 Packaging: Tape & Reel (TR) Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 38A (Tc) Rds On (Max) @ Id, Vgs: 17mOhm @ 20A, 10V Power Dissipation (Max): 46W (Tc) Vgs(th) (Max) @ Id: 2.5V @ 250µA Supplier Device Package: TO-252 (DPAK) Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 60 V Gate Charge (Qg) (Max) @ Vgs: 28.5 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 900 pF @ 25 V | auf Bestellung 95000 Stücke: Lieferzeit 10-14 Tag (e) |
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| TSM170N06PQ56 | Taiwan Semiconductor Corporation | Description: 60V, 44A, SINGLE N-CHANNEL POWER Packaging: Tape & Reel (TR) Part Status: Active Package / Case: 8-PowerTDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 8A (Ta), 44A (Tc) Rds On (Max) @ Id, Vgs: 17mOhm @ 8A, 10V Power Dissipation (Max): 2.6W (Ta), 73.5W (Tc) Vgs(th) (Max) @ Id: 2.5V @ 250µA Supplier Device Package: 8-PDFN (5x6) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 60 V Gate Charge (Qg) (Max) @ Vgs: 29 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1556 pF @ 30 V | Produkt ist nicht verfügbar | Mindestbestellmenge: 5000 Stücke Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||||||
| TSM170N06PQ56 RLG | Taiwan Semiconductor Corporation | Description: MOSFET N-CH 60V 44A 8PDFN Packaging: Cut Tape (CT) Package / Case: 8-PowerTDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 44A (Tc) Rds On (Max) @ Id, Vgs: 17mOhm @ 8A, 10V Power Dissipation (Max): 73.5W (Tc) Vgs(th) (Max) @ Id: 2.5V @ 250µA Supplier Device Package: 8-PDFN (5x6) Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 60 V Gate Charge (Qg) (Max) @ Vgs: 29 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1556 pF @ 30 V | auf Bestellung 19196 Stücke: Lieferzeit 10-14 Tag (e) |
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| TSM170N06PQ56 RLG | Taiwan Semiconductor Corporation | Description: MOSFET N-CH 60V 44A 8PDFN Packaging: Tape & Reel (TR) Package / Case: 8-PowerTDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 44A (Tc) Rds On (Max) @ Id, Vgs: 17mOhm @ 8A, 10V Power Dissipation (Max): 73.5W (Tc) Vgs(th) (Max) @ Id: 2.5V @ 250µA Supplier Device Package: 8-PDFN (5x6) Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 60 V Gate Charge (Qg) (Max) @ Vgs: 29 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1556 pF @ 30 V | auf Bestellung 17500 Stücke: Lieferzeit 10-14 Tag (e) |
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| TSM170N06PQ56 RLG | Taiwan Semiconductor | MOSFETs 60V, 44A, Single N-Channel Power MOSFET | auf Bestellung 5306 Stücke: Lieferzeit 10-14 Tag (e) |
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| TSM170NH10CR RLG | Taiwan Semiconductor Corporation | Description: 100A, 50V, SINGLE, N-CHANNEL LOW Packaging: Cut Tape (CT) Package / Case: 8-PowerTDFN Mounting Type: Surface Mount, Wettable Flank Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 9A (Ta), 50A (Tc) Rds On (Max) @ Id, Vgs: 17mOhm @ 25A, 10V Power Dissipation (Max): 97W (Tc) Vgs(th) (Max) @ Id: 3.6V @ 250µA Supplier Device Package: 8-PDFNU (4.9x5.75) Grade: Automotive Drive Voltage (Max Rds On, Min Rds On): 7V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 100 V Gate Charge (Qg) (Max) @ Vgs: 11 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 725 pF @ 60 V Qualification: AEC-Q101 | auf Bestellung 4992 Stücke: Lieferzeit 10-14 Tag (e) |
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| TSM170NH10CR RLG | Taiwan Semiconductor | MOSFETs 100A, 50V, Single, N-Channel Low Voltage MOSFETs, PDFN56U | Produkt ist nicht verfügbar | Mindestbestellmenge: 5000 Stücke Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||||||
| TSM170NH10CR RLG | Taiwan Semiconductor Corporation | Description: 100A, 50V, SINGLE, N-CHANNEL LOW Packaging: Tape & Reel (TR) Package / Case: 8-PowerTDFN Mounting Type: Surface Mount, Wettable Flank Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 9A (Ta), 50A (Tc) Rds On (Max) @ Id, Vgs: 17mOhm @ 25A, 10V Power Dissipation (Max): 97W (Tc) Vgs(th) (Max) @ Id: 3.6V @ 250µA Supplier Device Package: 8-PDFNU (4.9x5.75) Grade: Automotive Drive Voltage (Max Rds On, Min Rds On): 7V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 100 V Gate Charge (Qg) (Max) @ Vgs: 11 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 725 pF @ 60 V Qualification: AEC-Q101 | Produkt ist nicht verfügbar | Mindestbestellmenge: 2500 Stücke Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||||||
| TSM170NH10LCR RLG | Taiwan Semiconductor | MOSFETs 100A, 50V, Single, N-Channel Low Voltage MOSFETs, PDFN56U | Produkt ist nicht verfügbar | Mindestbestellmenge: 5000 Stücke Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||||||
| TSM170NH10LCR RLG | Taiwan Semiconductor Corporation | Description: 100A, 50V, SINGLE, N-CHANNEL LOW Packaging: Cut Tape (CT) Package / Case: 8-PowerTDFN Mounting Type: Surface Mount, Wettable Flank Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 9A (Ta), 50A (Tc) Rds On (Max) @ Id, Vgs: 17mOhm @ 25A, 10V Power Dissipation (Max): 97W (Tc) Vgs(th) (Max) @ Id: 2.2V @ 250µA Supplier Device Package: 8-PDFNU (4.9x5.75) Grade: Automotive Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 100 V Gate Charge (Qg) (Max) @ Vgs: 17 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 936 pF @ 60 V Qualification: AEC-Q101 | auf Bestellung 5000 Stücke: Lieferzeit 10-14 Tag (e) |
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| TSM170NH10LCR RLG | Taiwan Semiconductor Corporation | Description: 100A, 50V, SINGLE, N-CHANNEL LOW Packaging: Tape & Reel (TR) Package / Case: 8-PowerTDFN Mounting Type: Surface Mount, Wettable Flank Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 9A (Ta), 50A (Tc) Rds On (Max) @ Id, Vgs: 17mOhm @ 25A, 10V Power Dissipation (Max): 97W (Tc) Vgs(th) (Max) @ Id: 2.2V @ 250µA Supplier Device Package: 8-PDFNU (4.9x5.75) Grade: Automotive Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 100 V Gate Charge (Qg) (Max) @ Vgs: 17 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 936 pF @ 60 V Qualification: AEC-Q101 | auf Bestellung 5000 Stücke: Lieferzeit 10-14 Tag (e) |
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| TSM17C-1CG | Applied Motion | Stepper Motors NEMA17 40oz-in CAN 12-48VDC Intgrd Stpr | Produkt ist nicht verfügbar | Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||||||
| TSM17C-2CG | Applied Motion | Stepper Motors NEMA17 59oz-in CAN 12-48VDC Intgrd Stpr | Produkt ist nicht verfügbar | Im Einkaufswagen Stück im Wert von UAH |