Produkte > NVM
| Bezeichnung | Hersteller | Beschreibung | Verfügbarkeit | Privatkunde | ||||||||||||||
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| NVMYS2D9N04CLTWG | onsemi | Description: MOSFET N-CH 40V 27A/110A LFPAK4 Packaging: Cut Tape (CT) Package / Case: SOT-1023, 4-LFPAK Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 27A (Ta), 110A (Tc) Rds On (Max) @ Id, Vgs: 2.8mOhm @ 40A, 10V Power Dissipation (Max): 3.7W (Ta), 68W (Tc) Vgs(th) (Max) @ Id: 2V @ 60µA Supplier Device Package: LFPAK4 (5x6) Grade: Automotive Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 40 V Gate Charge (Qg) (Max) @ Vgs: 35 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 2100 pF @ 20 V Qualification: AEC-Q101 | auf Bestellung 8770 Stücke: Lieferzeit 10-14 Tag (e) |
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| NVMYS2D9N04CLTWG | onsemi | MOSFETs TRENCH 6 40V SL NFET | auf Bestellung 2515 Stücke: Lieferzeit 10-14 Tag (e) |
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| NVMYS3D3N06CLTWG | onsemi | Description: MOSFET N-CH 60V 26A/133A 4LFPAK Mounting Type: Surface Mount Package / Case: SOT-1023, 4-LFPAK Current - Continuous Drain (Id) @ 25°C: 26A (Ta), 133A (Tc) FET Type: N-Channel Packaging: Tape & Reel (TR) Grade: Automotive Supplier Device Package: LFPAK4 (5x6) Vgs(th) (Max) @ Id: 2V @ 250µA Power Dissipation (Max): 3.9W (Ta), 100W (Tc) Rds On (Max) @ Id, Vgs: 3mOhm @ 50A, 10V Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 175°C (TJ) Qualification: AEC-Q101 Input Capacitance (Ciss) (Max) @ Vds: 2880 pF @ 25 V Gate Charge (Qg) (Max) @ Vgs: 40.7 nC @ 10 V Drain to Source Voltage (Vdss): 60 V Vgs (Max): ±20V Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V | auf Bestellung 15000 Stücke: Lieferzeit 10-14 Tag (e) |
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| NVMYS3D3N06CLTWG | onsemi | MOSFETs 60V 3mOhm 133A Single N-Channel | Produkt ist nicht verfügbar | Mindestbestellmenge: 2 Stücke Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
| NVMYS3D3N06CLTWG | onsemi | Description: MOSFET N-CH 60V 26A/133A 4LFPAK Qualification: AEC-Q101 Input Capacitance (Ciss) (Max) @ Vds: 2880 pF @ 25 V Gate Charge (Qg) (Max) @ Vgs: 40.7 nC @ 10 V Drain to Source Voltage (Vdss): 60 V Vgs (Max): ±20V Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Grade: Automotive Supplier Device Package: LFPAK4 (5x6) Vgs(th) (Max) @ Id: 2V @ 250µA Power Dissipation (Max): 3.9W (Ta), 100W (Tc) Rds On (Max) @ Id, Vgs: 3mOhm @ 50A, 10V Current - Continuous Drain (Id) @ 25°C: 26A (Ta), 133A (Tc) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Package / Case: SOT-1023, 4-LFPAK Packaging: Cut Tape (CT) | auf Bestellung 17675 Stücke: Lieferzeit 10-14 Tag (e) |
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| NVMYS3D5N04CTWG | onsemi | MOSFETs TRENCH 6 40V SL NFET | auf Bestellung 2900 Stücke: Lieferzeit 10-14 Tag (e) |
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| NVMYS3D5N04CTWG | onsemi | Description: MOSFET N-CH 40V 24A/102A LFPAK4 Packaging: Cut Tape (CT) Package / Case: SOT-1023, 4-LFPAK Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 24A (Ta), 102A (Tc) Rds On (Max) @ Id, Vgs: 3.3mOhm @ 50A, 10V Power Dissipation (Max): 3.6W (Ta), 68W (Tc) Vgs(th) (Max) @ Id: 3.5V @ 60µA Supplier Device Package: LFPAK4 (5x6) Grade: Automotive Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 40 V Gate Charge (Qg) (Max) @ Vgs: 23 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1600 pF @ 25 V Qualification: AEC-Q101 | auf Bestellung 2954 Stücke: Lieferzeit 10-14 Tag (e) |
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| NVMYS3D5N04CTWG | onsemi | Description: MOSFET N-CH 40V 24A/102A LFPAK4 Packaging: Tape & Reel (TR) Package / Case: SOT-1023, 4-LFPAK Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 24A (Ta), 102A (Tc) Rds On (Max) @ Id, Vgs: 3.3mOhm @ 50A, 10V Power Dissipation (Max): 3.6W (Ta), 68W (Tc) Vgs(th) (Max) @ Id: 3.5V @ 60µA Supplier Device Package: LFPAK4 (5x6) Grade: Automotive Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 40 V Gate Charge (Qg) (Max) @ Vgs: 23 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1600 pF @ 25 V Qualification: AEC-Q101 | Produkt ist nicht verfügbar | Mindestbestellmenge: 3000 Stücke Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
| NVMYS4D1N06CLTWG | onsemi | MOSFET T6 60V LL LFPAK | auf Bestellung 3000 Stücke: Lieferzeit 10-14 Tag (e) |
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| NVMYS4D5N04CTWG | onsemi | MOSFETs Power MOSFET 40 V, 4.5m?, 80 A, Single N-Channel | auf Bestellung 2959 Stücke: Lieferzeit 10-14 Tag (e) |
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| NVMYS4D6N04CLTWG | onsemi | Description: MOSFET N-CH 40V 21A/78A LFPAK4 Qualification: AEC-Q101 Grade: Automotive Input Capacitance (Ciss) (Max) @ Vds: 1300 pF @ 25 V Gate Charge (Qg) (Max) @ Vgs: 23 nC @ 10 V Drain to Source Voltage (Vdss): 40 V Vgs (Max): ±20V Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Supplier Device Package: LFPAK4 (5x6) Vgs(th) (Max) @ Id: 2V @ 40µA Power Dissipation (Max): 3.6W (Ta), 50W (Tc) Rds On (Max) @ Id, Vgs: 4.5mOhm @ 35A, 10V Current - Continuous Drain (Id) @ 25°C: 21A (Ta), 78A (Tc) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Package / Case: SOT-1023, 4-LFPAK Packaging: Cut Tape (CT) | auf Bestellung 2939 Stücke: Lieferzeit 10-14 Tag (e) |
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| NVMYS4D6N04CLTWG | onsemi | Description: MOSFET N-CH 40V 21A/78A LFPAK4 Qualification: AEC-Q101 Grade: Automotive Input Capacitance (Ciss) (Max) @ Vds: 1300 pF @ 25 V Gate Charge (Qg) (Max) @ Vgs: 23 nC @ 10 V Drain to Source Voltage (Vdss): 40 V Vgs (Max): ±20V Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Supplier Device Package: LFPAK4 (5x6) Vgs(th) (Max) @ Id: 2V @ 40µA Power Dissipation (Max): 3.6W (Ta), 50W (Tc) Rds On (Max) @ Id, Vgs: 4.5mOhm @ 35A, 10V Current - Continuous Drain (Id) @ 25°C: 21A (Ta), 78A (Tc) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Package / Case: SOT-1023, 4-LFPAK Packaging: Tape & Reel (TR) | Produkt ist nicht verfügbar | Mindestbestellmenge: 3000 Stücke Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
| NVMYS4D6N04CLTWG | onsemi | MOSFET T6 40V LL LFPAK | auf Bestellung 3000 Stücke: Lieferzeit 108-112 Tag (e) |
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| NVMYS4D6N04CLTWG | ON Semiconductor | auf Bestellung 2770 Stücke: Lieferzeit 21-28 Tag (e) | Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||
| NVMYS5D3N04CTWG | ONSEMI | Description: ONSEMI - NVMYS5D3N04CTWG - Leistungs-MOSFET, n-Kanal, 40 V, 71 A, 5300 µohm, LFPAK, Oberflächenmontage tariffCode: 85412900 Transistormontage: Oberflächenmontage euEccn: NLR Drain-Source-Spannung Vds: 40V rohsCompliant: Y-EX Dauer-Drainstrom Id: 71A hazardous: false rohsPhthalatesCompliant: YES Qualifikation: AEC-Q101 isCanonical: N MSL: MSL 1 - unbegrenzt Verlustleistung Pd: 50W Gate-Source-Schwellenspannung, max.: 3.5V Verlustleistung: 50W SVHC: Lead (25-Jun-2025) Bauform - Transistor: LFPAK Qualifizierungsstandard der Automobilindustrie: AEC-Q101 Anzahl der Pins: 4Pin(s) Produktpalette: - productTraceability: Yes-Date/Lot Code Wandlerpolarität: n-Kanal usEccn: EAR99 Kanaltyp: n-Kanal Betriebswiderstand, Rds(on): 0.0044ohm Betriebstemperatur, max.: 175°C Rds(on)-Prüfspannung: 10V Drain-Source-Durchgangswiderstand: 5300µohm | auf Bestellung 5880 Stücke: Lieferzeit 14-21 Tag (e) |
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| NVMYS5D3N04CTWG | ONSEMI | Description: ONSEMI - NVMYS5D3N04CTWG - Leistungs-MOSFET, n-Kanal, 40 V, 71 A, 5300 µohm, LFPAK, Oberflächenmontage tariffCode: 85412900 Transistormontage: Oberflächenmontage euEccn: NLR Drain-Source-Spannung Vds: 40V rohsCompliant: Y-EX Dauer-Drainstrom Id: 71A hazardous: false rohsPhthalatesCompliant: YES Qualifikation: AEC-Q101 isCanonical: Y MSL: MSL 1 - unbegrenzt Gate-Source-Schwellenspannung, max.: 3.5V Verlustleistung: 50W SVHC: Lead (25-Jun-2025) Bauform - Transistor: LFPAK Anzahl der Pins: 4Pin(s) Produktpalette: - productTraceability: Yes-Date/Lot Code usEccn: EAR99 Kanaltyp: n-Kanal Betriebstemperatur, max.: 175°C Rds(on)-Prüfspannung: 10V Drain-Source-Durchgangswiderstand: 5300µohm | auf Bestellung 5380 Stücke: Lieferzeit 14-21 Tag (e) |
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| NVMYS5D3N04CTWG | onsemi | MOSFETs 40V 5.3Ohm 68A Single N-Channel | auf Bestellung 2980 Stücke: Lieferzeit 10-14 Tag (e) |
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| NVMYS5D3N04CTWG | onsemi | Description: MOSFET N-CH 40V 19A/71A 4LFPAK Current - Continuous Drain (Id) @ 25°C: 19A (Ta), 71A (Tc) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Package / Case: SOT-1023, 4-LFPAK Packaging: Cut Tape (CT) Input Capacitance (Ciss) (Max) @ Vds: 1000 pF @ 25 V Gate Charge (Qg) (Max) @ Vgs: 16 nC @ 10 V Drain to Source Voltage (Vdss): 40 V Vgs (Max): ±20V Drive Voltage (Max Rds On, Min Rds On): 10V Supplier Device Package: LFPAK4 (5x6) Vgs(th) (Max) @ Id: 3.5V @ 40µA Power Dissipation (Max): 3.6W (Ta), 50W (Tc) Rds On (Max) @ Id, Vgs: 5.3mOhm @ 35A, 10V Qualification: AEC-Q101 Grade: Automotive | auf Bestellung 6000 Stücke: Lieferzeit 10-14 Tag (e) |
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| NVMYS5D3N04CTWG | onsemi | Description: MOSFET N-CH 40V 19A/71A 4LFPAK Power Dissipation (Max): 3.6W (Ta), 50W (Tc) Rds On (Max) @ Id, Vgs: 5.3mOhm @ 35A, 10V Current - Continuous Drain (Id) @ 25°C: 19A (Ta), 71A (Tc) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Package / Case: SOT-1023, 4-LFPAK Packaging: Tape & Reel (TR) Input Capacitance (Ciss) (Max) @ Vds: 1000 pF @ 25 V Gate Charge (Qg) (Max) @ Vgs: 16 nC @ 10 V Drain to Source Voltage (Vdss): 40 V Vgs (Max): ±20V Drive Voltage (Max Rds On, Min Rds On): 10V Supplier Device Package: LFPAK4 (5x6) Vgs(th) (Max) @ Id: 3.5V @ 40µA Qualification: AEC-Q101 Grade: Automotive | auf Bestellung 6000 Stücke: Lieferzeit 10-14 Tag (e) |
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| NVMYS6D2N06CLTWG | onsemi | MOSFETs T6 60V LL LFPAK | auf Bestellung 2865 Stücke: Lieferzeit 10-14 Tag (e) |
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| NVMYS6D2N06CLTWG | onsemi | Description: MOSFET N-CH 60V 17A/71A 4LFPAK Packaging: Cut Tape (CT) Package / Case: SOT-1023, 4-LFPAK Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 17A (Ta), 71A (Tc) Rds On (Max) @ Id, Vgs: 6.1mOhm @ 35A, 10V Power Dissipation (Max): 3.6W (Ta), 61W (Tc) Vgs(th) (Max) @ Id: 2V @ 53µA Supplier Device Package: LFPAK4 (5x6) Grade: Automotive Vgs (Max): ±20V Drain to Source Voltage (Vdss): 60 V Gate Charge (Qg) (Max) @ Vgs: 20 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1400 pF @ 25 V Qualification: AEC-Q101 | auf Bestellung 10519 Stücke: Lieferzeit 10-14 Tag (e) |
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| NVMYS6D2N06CLTWG | ONSEMI | Description: ONSEMI - NVMYS6D2N06CLTWG - Leistungs-MOSFET, n-Kanal, 60 V, 71 A, 6100 µohm, LFPAK, Oberflächenmontage tariffCode: 85412900 Transistormontage: Oberflächenmontage euEccn: NLR Drain-Source-Spannung Vds: 60V rohsCompliant: Y-EX Dauer-Drainstrom Id: 71A hazardous: false rohsPhthalatesCompliant: YES Qualifikation: AEC-Q101 isCanonical: Y MSL: - Gate-Source-Schwellenspannung, max.: 2V Verlustleistung: 61W SVHC: Lead (25-Jun-2025) Bauform - Transistor: LFPAK Anzahl der Pins: 4Pin(s) Produktpalette: - productTraceability: No usEccn: EAR99 Kanaltyp: n-Kanal Betriebstemperatur, max.: 175°C Rds(on)-Prüfspannung: 10V Drain-Source-Durchgangswiderstand: 6100µohm | auf Bestellung 295 Stücke: Lieferzeit 14-21 Tag (e) |
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| NVMYS6D2N06CLTWG | onsemi | Description: MOSFET N-CH 60V 17A/71A 4LFPAK Packaging: Tape & Reel (TR) Package / Case: SOT-1023, 4-LFPAK Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 17A (Ta), 71A (Tc) Rds On (Max) @ Id, Vgs: 6.1mOhm @ 35A, 10V Power Dissipation (Max): 3.6W (Ta), 61W (Tc) Vgs(th) (Max) @ Id: 2V @ 53µA Supplier Device Package: LFPAK4 (5x6) Grade: Automotive Vgs (Max): ±20V Drain to Source Voltage (Vdss): 60 V Gate Charge (Qg) (Max) @ Vgs: 20 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1400 pF @ 25 V Qualification: AEC-Q101 | auf Bestellung 9000 Stücke: Lieferzeit 10-14 Tag (e) |
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| NVMYS7D0N06CTWG | onsemi | Description: POWER MOSFET 60 V, 1.68 MOHMS, 2 | Produkt ist nicht verfügbar | Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
| NVMYS7D3N04CLTWG | onsemi | Description: MOSFET N-CH 40V 17A/52A 4LFPAK Grade: Automotive Qualification: AEC-Q101 Input Capacitance (Ciss) (Max) @ Vds: 860 pF @ 25 V Gate Charge (Qg) (Max) @ Vgs: 1.8 nC @ 10 V Drain to Source Voltage (Vdss): 40 V Vgs (Max): ±20V Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Supplier Device Package: LFPAK4 (5x6) Vgs(th) (Max) @ Id: 2V @ 30µA Power Dissipation (Max): 3.8W (Ta), 38W (Tc) Rds On (Max) @ Id, Vgs: 7.3mOhm @ 10A, 10V Current - Continuous Drain (Id) @ 25°C: 17A (Ta), 52A (Tc) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Package / Case: SOT-1023, 4-LFPAK Packaging: Cut Tape (CT) | auf Bestellung 74163 Stücke: Lieferzeit 10-14 Tag (e) |
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| NVMYS7D3N04CLTWG | onsemi | MOSFETs 40V 7.3mOhm 50A Single N-Channel | auf Bestellung 2645 Stücke: Lieferzeit 10-14 Tag (e) |
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| NVMYS7D3N04CLTWG | onsemi | Description: MOSFET N-CH 40V 17A/52A 4LFPAK Qualification: AEC-Q101 Grade: Automotive Input Capacitance (Ciss) (Max) @ Vds: 860 pF @ 25 V Gate Charge (Qg) (Max) @ Vgs: 1.8 nC @ 10 V Drain to Source Voltage (Vdss): 40 V Vgs (Max): ±20V Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Supplier Device Package: LFPAK4 (5x6) Vgs(th) (Max) @ Id: 2V @ 30µA Power Dissipation (Max): 3.8W (Ta), 38W (Tc) Rds On (Max) @ Id, Vgs: 7.3mOhm @ 10A, 10V Current - Continuous Drain (Id) @ 25°C: 17A (Ta), 52A (Tc) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Package / Case: SOT-1023, 4-LFPAK Packaging: Tape & Reel (TR) | auf Bestellung 72000 Stücke: Lieferzeit 10-14 Tag (e) |
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| NVMYS8D0N04CTWG | onsemi | Description: MOSFET N-CH 40V 16A/49A 4LFPAK Packaging: Tape & Reel (TR) Package / Case: SOT-1023, 4-LFPAK Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 16A (Ta), 49A (Tc) Rds On (Max) @ Id, Vgs: 8.1mOhm @ 15A, 10V Power Dissipation (Max): 3.8W (Ta), 38W (Tc) Vgs(th) (Max) @ Id: 3.5V @ 30µA Supplier Device Package: LFPAK4 (5x6) Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 40 V Gate Charge (Qg) (Max) @ Vgs: 10 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 625 pF @ 25 V | Produkt ist nicht verfügbar | Mindestbestellmenge: 3000 Stücke Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
| NVMYS8D0N04CTWG | ONSEMI | Description: ONSEMI - NVMYS8D0N04CTWG - Leistungs-MOSFET, n-Kanal, 40 V, 49 A, 8100 µohm, LFPAK, Oberflächenmontage tariffCode: 85412900 Transistormontage: Oberflächenmontage Drain-Source-Spannung Vds: 40V rohsCompliant: Y-EX Dauer-Drainstrom Id: 49A hazardous: false rohsPhthalatesCompliant: YES Qualifikation: AEC-Q101 isCanonical: N MSL: MSL 1 - unbegrenzt usEccn: EAR99 Verlustleistung Pd: 38W Gate-Source-Schwellenspannung, max.: 3.5V euEccn: NLR Verlustleistung: 38W Bauform - Transistor: LFPAK Qualifizierungsstandard der Automobilindustrie: AEC-Q101 Anzahl der Pins: 4Pin(s) Produktpalette: - productTraceability: No Wandlerpolarität: n-Kanal Kanaltyp: n-Kanal Betriebswiderstand, Rds(on): 0.0067ohm Rds(on)-Prüfspannung: 10V Betriebstemperatur, max.: 175°C Drain-Source-Durchgangswiderstand: 8100µohm SVHC: Lead (25-Jun-2025) | auf Bestellung 900 Stücke: Lieferzeit 14-21 Tag (e) |
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| NVMYS8D0N04CTWG | onsemi | MOSFETs 40V 8.0 mOhm 48A Single N-Channel | auf Bestellung 6282 Stücke: Lieferzeit 10-14 Tag (e) |
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| NVMYS8D0N04CTWG | onsemi | Description: MOSFET N-CH 40V 16A/49A 4LFPAK Packaging: Cut Tape (CT) Package / Case: SOT-1023, 4-LFPAK Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 16A (Ta), 49A (Tc) Rds On (Max) @ Id, Vgs: 8.1mOhm @ 15A, 10V Power Dissipation (Max): 3.8W (Ta), 38W (Tc) Vgs(th) (Max) @ Id: 3.5V @ 30µA Supplier Device Package: LFPAK4 (5x6) Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 40 V Gate Charge (Qg) (Max) @ Vgs: 10 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 625 pF @ 25 V | Produkt ist nicht verfügbar | Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
| NVMYS8D0N04CTWG | ONSEMI | Description: ONSEMI - NVMYS8D0N04CTWG - Leistungs-MOSFET, n-Kanal, 40 V, 49 A, 8100 µohm, LFPAK, Oberflächenmontage tariffCode: 85412900 Transistormontage: Oberflächenmontage Drain-Source-Spannung Vds: 40V rohsCompliant: Y-EX Dauer-Drainstrom Id: 49A hazardous: false rohsPhthalatesCompliant: YES Qualifikation: AEC-Q101 isCanonical: Y MSL: MSL 1 - unbegrenzt usEccn: EAR99 Gate-Source-Schwellenspannung, max.: 3.5V euEccn: NLR Verlustleistung: 38W Bauform - Transistor: LFPAK Anzahl der Pins: 4Pin(s) Produktpalette: - productTraceability: Yes-Date/Lot Code Kanaltyp: n-Kanal Rds(on)-Prüfspannung: 10V Betriebstemperatur, max.: 175°C Drain-Source-Durchgangswiderstand: 8100µohm SVHC: Lead (25-Jun-2025) | auf Bestellung 900 Stücke: Lieferzeit 14-21 Tag (e) |
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| NVMYS9D3N06CLTWG | onsemi | MOSFETs Power MOSFET 60 V, 9.3m?, 51 A, Single N-Channel | auf Bestellung 612 Stücke: Lieferzeit 10-14 Tag (e) |
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