Produkte > IPG
| Bezeichnung | Hersteller | Beschreibung | Verfügbarkeit | Privatkunde | ||||||||||||||
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| IPG20N04S4L11AATMA1 | Infineon Technologies | Trans MOSFET N-CH 40V 20A Automotive 8-Pin TDSON EP T/R | Produkt ist nicht verfügbar | Mindestbestellmenge: 5000 Stücke Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
| IPG20N04S4L11ATMA1 | Infineon Technologies | Description: MOSFET 2N-CH 40V 20A 8TDSON Packaging: Tape & Reel (TR) Package / Case: 8-PowerVDFN Mounting Type: Surface Mount Configuration: 2 N-Channel (Dual) Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 41W Drain to Source Voltage (Vdss): 40V Current - Continuous Drain (Id) @ 25°C: 20A Input Capacitance (Ciss) (Max) @ Vds: 1990pF @ 25V Rds On (Max) @ Id, Vgs: 11.6mOhm @ 17A, 10V Gate Charge (Qg) (Max) @ Vgs: 26nC @ 10V FET Feature: Logic Level Gate Vgs(th) (Max) @ Id: 2.2V @ 15µA Supplier Device Package: PG-TDSON-8-4 Grade: Automotive Part Status: Active Qualification: AEC-Q101 | Produkt ist nicht verfügbar | Mindestbestellmenge: 5000 Stücke Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
| IPG20N04S4L11ATMA1 | Infineon Technologies | Trans MOSFET N-CH 40V 20A Automotive 8-Pin TDSON EP T/R | Produkt ist nicht verfügbar | Mindestbestellmenge: 5000 Stücke Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
| IPG20N04S4L11ATMA1 | Infineon Technologies | Description: MOSFET 2N-CH 40V 20A 8TDSON Packaging: Cut Tape (CT) Package / Case: 8-PowerVDFN Mounting Type: Surface Mount Configuration: 2 N-Channel (Dual) Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 41W Drain to Source Voltage (Vdss): 40V Current - Continuous Drain (Id) @ 25°C: 20A Input Capacitance (Ciss) (Max) @ Vds: 1990pF @ 25V Rds On (Max) @ Id, Vgs: 11.6mOhm @ 17A, 10V Gate Charge (Qg) (Max) @ Vgs: 26nC @ 10V FET Feature: Logic Level Gate Vgs(th) (Max) @ Id: 2.2V @ 15µA Supplier Device Package: PG-TDSON-8-4 Grade: Automotive Part Status: Active Qualification: AEC-Q101 | auf Bestellung 7704 Stücke: Lieferzeit 10-14 Tag (e) |
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| IPG20N04S4L18AATMA1 | Infineon Technologies | Description: MOSFET 2N-CH 40V 20A 8TDSON Packaging: Tape & Reel (TR) Package / Case: 8-PowerVDFN Mounting Type: Surface Mount, Wettable Flank Configuration: 2 N-Channel (Dual) Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 26W (Tc) Drain to Source Voltage (Vdss): 40V Current - Continuous Drain (Id) @ 25°C: 20A (Tc) Input Capacitance (Ciss) (Max) @ Vds: 1071pF @ 25V Rds On (Max) @ Id, Vgs: 18mOhm @ 17A, 10V Gate Charge (Qg) (Max) @ Vgs: 15nC @ 10V Vgs(th) (Max) @ Id: 2.2V @ 8µA Supplier Device Package: PG-TDSON-8-10 Part Status: Active Grade: Automotive Qualification: AEC-Q101 | auf Bestellung 5000 Stücke: Lieferzeit 10-14 Tag (e) |
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| IPG20N04S4L18AATMA1 | Infineon Technologies | MOSFETs MOSFET_(20V 40V) | Produkt ist nicht verfügbar | Mindestbestellmenge: 5000 Stücke Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
| IPG20N04S4L18AATMA1 | Infineon Technologies | Description: MOSFET 2N-CH 40V 20A 8TDSON Packaging: Cut Tape (CT) Package / Case: 8-PowerVDFN Mounting Type: Surface Mount, Wettable Flank Configuration: 2 N-Channel (Dual) Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 26W (Tc) Drain to Source Voltage (Vdss): 40V Current - Continuous Drain (Id) @ 25°C: 20A (Tc) Input Capacitance (Ciss) (Max) @ Vds: 1071pF @ 25V Rds On (Max) @ Id, Vgs: 18mOhm @ 17A, 10V Gate Charge (Qg) (Max) @ Vgs: 15nC @ 10V Vgs(th) (Max) @ Id: 2.2V @ 8µA Supplier Device Package: PG-TDSON-8-10 Grade: Automotive Part Status: Active Qualification: AEC-Q101 | auf Bestellung 9821 Stücke: Lieferzeit 10-14 Tag (e) |
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| IPG20N06S2L-35 | Infineon Technologies | MOSFETs N-Ch 55V 20A TDSON-8 OptiMOS | Produkt ist nicht verfügbar | Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
| IPG20N06S2L-35AATMA1 | Infineon Technologies | Description: N-CHANNEL POWER MOSFET Input Capacitance (Ciss) (Max) @ Vds: 790pF @ 25V Current - Continuous Drain (Id) @ 25°C: 20A (Tc) Drain to Source Voltage (Vdss): 55V Power - Max: 65W (Tc) Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 175°C (TJ) Configuration: 2 N-Channel (Dual) Mounting Type: Surface Mount, Wettable Flank Package / Case: 8-PowerVDFN Packaging: Bulk Part Status: Active Supplier Device Package: PG-TDSON-8-10 Vgs(th) (Max) @ Id: 2V @ 27µA FET Feature: Logic Level Gate Gate Charge (Qg) (Max) @ Vgs: 23nC @ 10V Rds On (Max) @ Id, Vgs: 35mOhm @ 15A, 10V | Produkt ist nicht verfügbar | Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
| IPG20N06S2L-50 | Infineon Technologies | MOSFETs N-Ch 55V 20A TDSON-8 OptiMOS | auf Bestellung 1571 Stücke: Lieferzeit 10-14 Tag (e) |
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| IPG20N06S2L-65 | Infineon Technologies | MOSFETs N-Ch 55V 20A TDSON-8 OptiMOS | auf Bestellung 2194 Stücke: Lieferzeit 10-14 Tag (e) |
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| IPG20N06S2L35AATMA1 | Infineon Technologies | Description: MOSFET 2N-CH 55V 20A 8TDSON Packaging: Tape & Reel (TR) Package / Case: 8-PowerVDFN Mounting Type: Surface Mount, Wettable Flank Configuration: 2 N-Channel (Dual) Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 65W Drain to Source Voltage (Vdss): 55V Current - Continuous Drain (Id) @ 25°C: 20A (Tc) Input Capacitance (Ciss) (Max) @ Vds: 790pF @ 25V Rds On (Max) @ Id, Vgs: 35mOhm @ 15A, 10V Gate Charge (Qg) (Max) @ Vgs: 23nC @ 10V FET Feature: Logic Level Gate Vgs(th) (Max) @ Id: 2V @ 27µA Supplier Device Package: PG-TDSON-8-10 Grade: Automotive Part Status: Active Qualification: AEC-Q101 | auf Bestellung 10000 Stücke: Lieferzeit 10-14 Tag (e) |
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| IPG20N06S2L35AATMA1 | Infineon Technologies | Trans MOSFET N-CH 55V 20A Automotive 8-Pin TDSON EP T/R | Produkt ist nicht verfügbar | Mindestbestellmenge: 5000 Stücke Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
| IPG20N06S2L35AATMA1 | Infineon Technologies | Description: MOSFET 2N-CH 55V 20A 8TDSON Packaging: Cut Tape (CT) Package / Case: 8-PowerVDFN Mounting Type: Surface Mount, Wettable Flank Configuration: 2 N-Channel (Dual) Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 65W Drain to Source Voltage (Vdss): 55V Current - Continuous Drain (Id) @ 25°C: 20A (Tc) Input Capacitance (Ciss) (Max) @ Vds: 790pF @ 25V Rds On (Max) @ Id, Vgs: 35mOhm @ 15A, 10V Gate Charge (Qg) (Max) @ Vgs: 23nC @ 10V FET Feature: Logic Level Gate Vgs(th) (Max) @ Id: 2V @ 27µA Supplier Device Package: PG-TDSON-8-10 Grade: Automotive Part Status: Active Qualification: AEC-Q101 | auf Bestellung 13276 Stücke: Lieferzeit 10-14 Tag (e) |
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| IPG20N06S2L35AATMA1 | Infineon Technologies | Trans MOSFET N-CH 55V 20A Automotive 8-Pin TDSON EP T/R | Produkt ist nicht verfügbar | Mindestbestellmenge: 5000 Stücke Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
| IPG20N06S2L35AATMA1 | Infineon Technologies | MOSFETs MOSFET | Produkt ist nicht verfügbar | Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
| IPG20N06S2L35ATMA1 | Infineon Technologies | Description: MOSFET 2N-CH 55V 20A 8TDSON Packaging: Tape & Reel (TR) Package / Case: 8-PowerVDFN Mounting Type: Surface Mount Configuration: 2 N-Channel (Dual) Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 65W Drain to Source Voltage (Vdss): 55V Current - Continuous Drain (Id) @ 25°C: 20A Input Capacitance (Ciss) (Max) @ Vds: 790pF @ 25V Rds On (Max) @ Id, Vgs: 35mOhm @ 15A, 10V Gate Charge (Qg) (Max) @ Vgs: 23nC @ 10V FET Feature: Logic Level Gate Vgs(th) (Max) @ Id: 2V @ 27µA Supplier Device Package: PG-TDSON-8-4 Grade: Automotive Part Status: Active Qualification: AEC-Q101 | auf Bestellung 5000 Stücke: Lieferzeit 10-14 Tag (e) |
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| IPG20N06S2L35ATMA1 | Infineon Technologies | IPG20N06S2L35ATMA1 Infineon Technologies AG Transistors MOSFETs N-CH 55V 20A Automotive 8-Pin TDSON EP T/R - Arrow.com | Produkt ist nicht verfügbar | Mindestbestellmenge: 5000 Stücke Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
| IPG20N06S2L35ATMA1 | INFINEON | Description: INFINEON - IPG20N06S2L35ATMA1 - Dual-MOSFET, n-Kanal, 55 V, 55 V, 20 A, 20 A, 0.028 ohm tariffCode: 85412900 rohsCompliant: YES Dauer-Drainstrom Id, p-Kanal: 20A hazardous: false rohsPhthalatesCompliant: YES Qualifikation: AEC-Q101 Drain-Source-Spannung Vds, p-Kanal: 55V MSL: MSL 1 - unbegrenzt usEccn: EAR99 Dauer-Drainstrom Id, n-Kanal: 20A Drain-Source-Durchgangswiderstand, p-Kanal: 0.028ohm Verlustleistung, p-Kanal: 65W Drain-Source-Spannung Vds, n-Kanal: 55V euEccn: NLR Bauform - Transistor: TDSON Anzahl der Pins: 8Pin(s) Produktpalette: - Drain-Source-Durchgangswiderstand, n-Kanal: 0.028ohm productTraceability: Yes-Date/Lot Code Kanaltyp: n-Kanal Verlustleistung, n-Kanal: 65W Betriebstemperatur, max.: 175°C SVHC: No SVHC (21-Jan-2025) | auf Bestellung 21717 Stücke: Lieferzeit 14-21 Tag (e) |
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| IPG20N06S2L35ATMA1 | Infineon | auf Bestellung 5000 Stücke: Lieferzeit 21-28 Tag (e) | Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||
| IPG20N06S2L35ATMA1 | Infineon Technologies | Description: MOSFET 2N-CH 55V 20A 8TDSON Packaging: Cut Tape (CT) Package / Case: 8-PowerVDFN Mounting Type: Surface Mount Configuration: 2 N-Channel (Dual) Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 65W Drain to Source Voltage (Vdss): 55V Current - Continuous Drain (Id) @ 25°C: 20A Input Capacitance (Ciss) (Max) @ Vds: 790pF @ 25V Rds On (Max) @ Id, Vgs: 35mOhm @ 15A, 10V Gate Charge (Qg) (Max) @ Vgs: 23nC @ 10V FET Feature: Logic Level Gate Vgs(th) (Max) @ Id: 2V @ 27µA Supplier Device Package: PG-TDSON-8-4 Grade: Automotive Part Status: Active Qualification: AEC-Q101 | auf Bestellung 9603 Stücke: Lieferzeit 10-14 Tag (e) |
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| IPG20N06S2L35ATMA1 | INFINEON | Description: INFINEON - IPG20N06S2L35ATMA1 - Dual-MOSFET, n-Kanal, 55 V, 55 V, 20 A, 20 A, 0.028 ohm tariffCode: 85412900 rohsCompliant: YES Dauer-Drainstrom Id, p-Kanal: 20A hazardous: false rohsPhthalatesCompliant: YES Qualifikation: AEC-Q101 isCanonical: Y Drain-Source-Spannung Vds, p-Kanal: 55V MSL: MSL 1 - unbegrenzt usEccn: EAR99 Dauer-Drainstrom Id, n-Kanal: 20A Drain-Source-Durchgangswiderstand, p-Kanal: 0.028ohm Verlustleistung, p-Kanal: 65W Drain-Source-Spannung Vds, n-Kanal: 55V euEccn: NLR Bauform - Transistor: TDSON Anzahl der Pins: 8Pin(s) Produktpalette: - Drain-Source-Durchgangswiderstand, n-Kanal: 0.028ohm productTraceability: Yes-Date/Lot Code Kanaltyp: n-Kanal Verlustleistung, n-Kanal: 65W Betriebstemperatur, max.: 175°C SVHC: No SVHC (21-Jan-2025) | auf Bestellung 21717 Stücke: Lieferzeit 14-21 Tag (e) |
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| IPG20N06S2L50AATMA1 | Infineon Technologies | Description: MOSFET 2N-CH 55V 20A 8TDSON Packaging: Cut Tape (CT) Package / Case: 8-PowerVDFN Mounting Type: Surface Mount, Wettable Flank Configuration: 2 N-Channel (Dual) Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 51W Drain to Source Voltage (Vdss): 55V Current - Continuous Drain (Id) @ 25°C: 20A Input Capacitance (Ciss) (Max) @ Vds: 560pF @ 25V Rds On (Max) @ Id, Vgs: 50mOhm @ 15A, 10V Gate Charge (Qg) (Max) @ Vgs: 17nC @ 10V FET Feature: Logic Level Gate Vgs(th) (Max) @ Id: 2V @ 19µA Supplier Device Package: PG-TDSON-8-10 Grade: Automotive Qualification: AEC-Q101 | auf Bestellung 4976 Stücke: Lieferzeit 10-14 Tag (e) |
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| IPG20N06S2L50AATMA1 | Infineon Technologies | Description: MOSFET 2N-CH 55V 20A 8TDSON Packaging: Tape & Reel (TR) Package / Case: 8-PowerVDFN Mounting Type: Surface Mount, Wettable Flank Configuration: 2 N-Channel (Dual) Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 51W Drain to Source Voltage (Vdss): 55V Current - Continuous Drain (Id) @ 25°C: 20A Input Capacitance (Ciss) (Max) @ Vds: 560pF @ 25V Rds On (Max) @ Id, Vgs: 50mOhm @ 15A, 10V Gate Charge (Qg) (Max) @ Vgs: 17nC @ 10V FET Feature: Logic Level Gate Vgs(th) (Max) @ Id: 2V @ 19µA Supplier Device Package: PG-TDSON-8-10 Grade: Automotive Qualification: AEC-Q101 | Produkt ist nicht verfügbar | Mindestbestellmenge: 5000 Stücke Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
| IPG20N06S2L50AATMA1 | Infineon Technologies | MOSFETs N-Ch 55V 20A TDSON-8 | Produkt ist nicht verfügbar | Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
| IPG20N06S2L50AATMA1 | Infineon Technologies | Trans MOSFET N-CH 55V 20A Automotive 8-Pin TDSON EP T/R | Produkt ist nicht verfügbar | Mindestbestellmenge: 5000 Stücke Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
| IPG20N06S2L50ATMA1 | Infineon Technologies | Trans MOSFET N-CH 55V 20A Automotive 8-Pin TDSON EP T/R | Produkt ist nicht verfügbar | Mindestbestellmenge: 5000 Stücke Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
| IPG20N06S2L50ATMA1 | INFINEON | Description: INFINEON - IPG20N06S2L50ATMA1 - Dual-MOSFET, n-Kanal, 55 V, 55 V, 20 A, 20 A, 0.05 ohm tariffCode: 85412900 rohsCompliant: YES Dauer-Drainstrom Id, p-Kanal: 20A hazardous: false rohsPhthalatesCompliant: YES Qualifikation: AEC-Q101 isCanonical: Y Drain-Source-Spannung Vds, p-Kanal: 55V MSL: MSL 1 - unbegrenzt usEccn: EAR99 Dauer-Drainstrom Id, n-Kanal: 20A Drain-Source-Durchgangswiderstand, p-Kanal: - Verlustleistung, p-Kanal: 51W Drain-Source-Spannung Vds, n-Kanal: 55V euEccn: NLR Bauform - Transistor: TDSON Anzahl der Pins: 8Pin(s) Produktpalette: - Drain-Source-Durchgangswiderstand, n-Kanal: 0.05ohm productTraceability: No Kanaltyp: n-Kanal Verlustleistung, n-Kanal: 51W Betriebstemperatur, max.: 175°C SVHC: No SVHC (21-Jan-2025) | auf Bestellung 9655 Stücke: Lieferzeit 14-21 Tag (e) |
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| IPG20N06S2L50ATMA1 | Infineon Technologies | Description: MOSFET 2N-CH 55V 20A 8TDSON Packaging: Cut Tape (CT) Package / Case: 8-PowerVDFN Mounting Type: Surface Mount Configuration: 2 N-Channel (Dual) Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 51W Drain to Source Voltage (Vdss): 55V Current - Continuous Drain (Id) @ 25°C: 20A Input Capacitance (Ciss) (Max) @ Vds: 560pF @ 25V Rds On (Max) @ Id, Vgs: 50mOhm @ 15A, 10V Gate Charge (Qg) (Max) @ Vgs: 17nC @ 10V FET Feature: Logic Level Gate Vgs(th) (Max) @ Id: 2V @ 19µA Supplier Device Package: PG-TDSON-8-4 Part Status: Active | auf Bestellung 4954 Stücke: Lieferzeit 10-14 Tag (e) |
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| IPG20N06S2L50ATMA1 | Infineon | auf Bestellung 5000 Stücke: Lieferzeit 21-28 Tag (e) | Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||
| IPG20N06S2L50ATMA1 | Infineon Technologies | Trans MOSFET N-CH 55V 20A Automotive 8-Pin TDSON EP T/R | Produkt ist nicht verfügbar | Mindestbestellmenge: 5000 Stücke Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
| IPG20N06S2L50ATMA1 | Infineon Technologies | Description: MOSFET 2N-CH 55V 20A 8TDSON Packaging: Tape & Reel (TR) Package / Case: 8-PowerVDFN Mounting Type: Surface Mount Configuration: 2 N-Channel (Dual) Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 51W Drain to Source Voltage (Vdss): 55V Current - Continuous Drain (Id) @ 25°C: 20A Input Capacitance (Ciss) (Max) @ Vds: 560pF @ 25V Rds On (Max) @ Id, Vgs: 50mOhm @ 15A, 10V Gate Charge (Qg) (Max) @ Vgs: 17nC @ 10V FET Feature: Logic Level Gate Vgs(th) (Max) @ Id: 2V @ 19µA Supplier Device Package: PG-TDSON-8-4 Part Status: Active | Produkt ist nicht verfügbar | Mindestbestellmenge: 5000 Stücke Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
| IPG20N06S2L50ATMA1 | INFINEON | Description: INFINEON - IPG20N06S2L50ATMA1 - Dual-MOSFET, n-Kanal, 55 V, 55 V, 20 A, 20 A, 0.05 ohm tariffCode: 85412900 rohsCompliant: YES Dauer-Drainstrom Id, p-Kanal: 20A hazardous: false rohsPhthalatesCompliant: YES Qualifikation: AEC-Q101 isCanonical: Y Drain-Source-Spannung Vds, p-Kanal: 55V MSL: MSL 1 - unbegrenzt usEccn: EAR99 Dauer-Drainstrom Id, n-Kanal: 20A Drain-Source-Durchgangswiderstand, p-Kanal: - Verlustleistung, p-Kanal: 51W Drain-Source-Spannung Vds, n-Kanal: 55V euEccn: NLR Bauform - Transistor: TDSON Anzahl der Pins: 8Pin(s) Produktpalette: - Drain-Source-Durchgangswiderstand, n-Kanal: 0.05ohm productTraceability: No Kanaltyp: n-Kanal Verlustleistung, n-Kanal: 51W Betriebstemperatur, max.: 175°C SVHC: No SVHC (21-Jan-2025) | auf Bestellung 9655 Stücke: Lieferzeit 14-21 Tag (e) |
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| IPG20N06S2L65AATMA1 | Infineon Technologies | MOSFETs MOSFET | Produkt ist nicht verfügbar | Mindestbestellmenge: 5000 Stücke Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
| IPG20N06S2L65AATMA1 | Infineon Technologies | Description: MOSFET 2N-CH 55V 20A 8TDSON Packaging: Cut Tape (CT) Package / Case: 8-PowerVDFN Mounting Type: Surface Mount, Wettable Flank Configuration: 2 N-Channel (Dual) Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 43W Drain to Source Voltage (Vdss): 55V Current - Continuous Drain (Id) @ 25°C: 20A Input Capacitance (Ciss) (Max) @ Vds: 410pF @ 25V Rds On (Max) @ Id, Vgs: 65mOhm @ 15A, 10V Gate Charge (Qg) (Max) @ Vgs: 12nC @ 10V FET Feature: Logic Level Gate Vgs(th) (Max) @ Id: 2V @ 14µA Supplier Device Package: PG-TDSON-8-10 Grade: Automotive Part Status: Active Qualification: AEC-Q101 | auf Bestellung 13133 Stücke: Lieferzeit 10-14 Tag (e) |
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| IPG20N06S2L65AATMA1 | Infineon Technologies | Description: MOSFET 2N-CH 55V 20A 8TDSON Packaging: Tape & Reel (TR) Package / Case: 8-PowerVDFN Mounting Type: Surface Mount, Wettable Flank Configuration: 2 N-Channel (Dual) Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 43W Drain to Source Voltage (Vdss): 55V Current - Continuous Drain (Id) @ 25°C: 20A Input Capacitance (Ciss) (Max) @ Vds: 410pF @ 25V Rds On (Max) @ Id, Vgs: 65mOhm @ 15A, 10V Gate Charge (Qg) (Max) @ Vgs: 12nC @ 10V FET Feature: Logic Level Gate Vgs(th) (Max) @ Id: 2V @ 14µA Supplier Device Package: PG-TDSON-8-10 Grade: Automotive Part Status: Active Qualification: AEC-Q101 | auf Bestellung 10000 Stücke: Lieferzeit 10-14 Tag (e) |
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| IPG20N06S2L65AAUMA1 | Infineon Technologies | Description: MOSFET 2N-CH 55V 20A 8TDSON Packaging: Bulk Package / Case: 8-PowerVDFN Mounting Type: Surface Mount, Wettable Flank Configuration: 2 N-Channel (Dual) Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 43W (Tc) Drain to Source Voltage (Vdss): 55V Current - Continuous Drain (Id) @ 25°C: 20A (Tc) Input Capacitance (Ciss) (Max) @ Vds: 410pF @ 25V Rds On (Max) @ Id, Vgs: 65mOhm @ 15A, 10V Gate Charge (Qg) (Max) @ Vgs: 12nC @ 10V FET Feature: Logic Level Gate Vgs(th) (Max) @ Id: 2V @ 14µA Supplier Device Package: PG-TDSON-8-10 | Produkt ist nicht verfügbar | Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
| IPG20N06S2L65ATMA1 | Infineon Technologies | Description: MOSFET 2N-CH 55V 20A 8TDSON Packaging: Cut Tape (CT) Package / Case: 8-PowerVDFN Mounting Type: Surface Mount Configuration: 2 N-Channel (Dual) Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 43W Drain to Source Voltage (Vdss): 55V Current - Continuous Drain (Id) @ 25°C: 20A Input Capacitance (Ciss) (Max) @ Vds: 410pF @ 25V Rds On (Max) @ Id, Vgs: 65mOhm @ 15A, 10V Gate Charge (Qg) (Max) @ Vgs: 12nC @ 10V FET Feature: Logic Level Gate Vgs(th) (Max) @ Id: 2V @ 14µA Supplier Device Package: PG-TDSON-8-4 Grade: Automotive Part Status: Active Qualification: AEC-Q101 | auf Bestellung 26508 Stücke: Lieferzeit 10-14 Tag (e) |
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| IPG20N06S2L65ATMA1 | Infineon Technologies | Trans MOSFET N-CH 55V 20A Automotive 8-Pin TDSON EP T/R | Produkt ist nicht verfügbar | Mindestbestellmenge: 5000 Stücke Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
| IPG20N06S2L65ATMA1 | INFINEON | Description: INFINEON - IPG20N06S2L65ATMA1 - Dual-MOSFET, n-Kanal, 55 V, 55 V, 20 A, 20 A, 0.053 ohm tariffCode: 85412900 rohsCompliant: YES Dauer-Drainstrom Id, p-Kanal: 20A hazardous: false rohsPhthalatesCompliant: YES Qualifikation: AEC-Q101 Drain-Source-Spannung Vds, p-Kanal: 55V MSL: MSL 1 - unbegrenzt usEccn: EAR99 Dauer-Drainstrom Id, n-Kanal: 20A Drain-Source-Durchgangswiderstand, p-Kanal: 0.053ohm Verlustleistung, p-Kanal: 43W Drain-Source-Spannung Vds, n-Kanal: 55V euEccn: NLR Bauform - Transistor: TDSON Anzahl der Pins: 8Pin(s) Produktpalette: OptiMOS Series Drain-Source-Durchgangswiderstand, n-Kanal: 0.053ohm productTraceability: Yes-Date/Lot Code Kanaltyp: n-Kanal Verlustleistung, n-Kanal: 43W Betriebstemperatur, max.: 175°C SVHC: No SVHC (21-Jan-2025) | auf Bestellung 2406 Stücke: Lieferzeit 14-21 Tag (e) |
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| IPG20N06S2L65ATMA1 | Infineon Technologies | Description: MOSFET 2N-CH 55V 20A 8TDSON Packaging: Tape & Reel (TR) Package / Case: 8-PowerVDFN Mounting Type: Surface Mount Configuration: 2 N-Channel (Dual) Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 43W Drain to Source Voltage (Vdss): 55V Current - Continuous Drain (Id) @ 25°C: 20A Input Capacitance (Ciss) (Max) @ Vds: 410pF @ 25V Rds On (Max) @ Id, Vgs: 65mOhm @ 15A, 10V Gate Charge (Qg) (Max) @ Vgs: 12nC @ 10V FET Feature: Logic Level Gate Vgs(th) (Max) @ Id: 2V @ 14µA Supplier Device Package: PG-TDSON-8-4 Grade: Automotive Part Status: Active Qualification: AEC-Q101 | auf Bestellung 20000 Stücke: Lieferzeit 10-14 Tag (e) |
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| IPG20N06S2L65ATMA1 | Infineon Technologies | Trans MOSFET N-CH 55V 20A Automotive 8-Pin TDSON EP T/R | auf Bestellung 6 Stücke: Lieferzeit 14-21 Tag (e) |
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| IPG20N06S2L65ATMA1 | Infineon | auf Bestellung 5000 Stücke: Lieferzeit 21-28 Tag (e) | Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||
| IPG20N06S2L65ATMA1 | INFINEON | Description: INFINEON - IPG20N06S2L65ATMA1 - Dual-MOSFET, n-Kanal, 55 V, 55 V, 20 A, 20 A, 0.053 ohm tariffCode: 85412900 rohsCompliant: YES Dauer-Drainstrom Id, p-Kanal: 20A hazardous: false rohsPhthalatesCompliant: YES Qualifikation: AEC-Q101 Drain-Source-Spannung Vds, p-Kanal: 55V MSL: MSL 1 - unbegrenzt usEccn: EAR99 Dauer-Drainstrom Id, n-Kanal: 20A Drain-Source-Durchgangswiderstand, p-Kanal: 0.053ohm Verlustleistung, p-Kanal: 43W Drain-Source-Spannung Vds, n-Kanal: 55V euEccn: NLR Bauform - Transistor: TDSON Anzahl der Pins: 8Pin(s) Produktpalette: OptiMOS Series Drain-Source-Durchgangswiderstand, n-Kanal: 0.053ohm productTraceability: Yes-Date/Lot Code Kanaltyp: n-Kanal Verlustleistung, n-Kanal: 43W Betriebstemperatur, max.: 175°C SVHC: No SVHC (21-Jan-2025) | auf Bestellung 2406 Stücke: Lieferzeit 14-21 Tag (e) |
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| IPG20N06S2L65AUMA1 | Infineon Technologies | Description: MOSFET Packaging: Bulk Part Status: Obsolete | Produkt ist nicht verfügbar | Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
| IPG20N06S3L-23 | Infineon Technologies | Description: MOSFET 2N-CH 55V 20A 8TDSON Packaging: Tape & Reel (TR) Package / Case: 8-PowerVDFN Mounting Type: Surface Mount Configuration: 2 N-Channel (Dual) Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 45W Drain to Source Voltage (Vdss): 55V Current - Continuous Drain (Id) @ 25°C: 20A Input Capacitance (Ciss) (Max) @ Vds: 2950pF @ 25V Rds On (Max) @ Id, Vgs: 23mOhm @ 16A, 10V Gate Charge (Qg) (Max) @ Vgs: 42nC @ 10V FET Feature: Logic Level Gate Vgs(th) (Max) @ Id: 2.2V @ 20µA Supplier Device Package: PG-TDSON-8-4 | Produkt ist nicht verfügbar | Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
| IPG20N06S3L-35 | Infineon Technologies | Description: MOSFET 2N-CH 55V 20A 8TDSON Packaging: Tape & Reel (TR) Package / Case: 8-PowerVDFN Mounting Type: Surface Mount Configuration: 2 N-Channel (Dual) Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 30W Drain to Source Voltage (Vdss): 55V Current - Continuous Drain (Id) @ 25°C: 20A Input Capacitance (Ciss) (Max) @ Vds: 1730pF @ 25V Rds On (Max) @ Id, Vgs: 35mOhm @ 11A, 10V Gate Charge (Qg) (Max) @ Vgs: 23nC @ 10V FET Feature: Logic Level Gate Vgs(th) (Max) @ Id: 2.2V @ 15µA Supplier Device Package: PG-TDSON-8-4 | Produkt ist nicht verfügbar | Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
| IPG20N06S4-15 | Infineon Technologies | MOSFET N-Ch 60V 20A TDSON-8 OptiMOS-T2 | auf Bestellung 2674 Stücke: Lieferzeit 10-14 Tag (e) | Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
| IPG20N06S415AATMA1 | INFINEON | Description: INFINEON - IPG20N06S415AATMA1 - Dual-MOSFET, n-Kanal, 60 V, 60 V, 20 A, 20 A, 0.0155 ohm tariffCode: 85412900 rohsCompliant: YES Dauer-Drainstrom Id, p-Kanal: 20A hazardous: false rohsPhthalatesCompliant: YES Qualifikation: AEC-Q101 isCanonical: N Drain-Source-Spannung Vds, p-Kanal: 60V MSL: MSL 1 - unbegrenzt usEccn: EAR99 Dauer-Drainstrom Id, n-Kanal: 20A Drain-Source-Durchgangswiderstand, p-Kanal: - Verlustleistung, p-Kanal: 50W Drain-Source-Spannung Vds, n-Kanal: 60V euEccn: NLR Bauform - Transistor: TDSON Anzahl der Pins: 8Pin(s) Produktpalette: OptiMOS T2 Series Drain-Source-Durchgangswiderstand, n-Kanal: 0.0155ohm productTraceability: Yes-Date/Lot Code Kanaltyp: n-Kanal Verlustleistung, n-Kanal: 50W Betriebstemperatur, max.: 175°C SVHC: No SVHC (27-Jun-2018) | auf Bestellung 3172 Stücke: Lieferzeit 14-21 Tag (e) |
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| IPG20N06S415AATMA1 | Infineon Technologies | Description: MOSFET 2N-CH 60V 20A 8TDSON Packaging: Cut Tape (CT) Package / Case: 8-PowerVDFN Mounting Type: Surface Mount, Wettable Flank Configuration: 2 N-Channel (Dual) Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 50W Drain to Source Voltage (Vdss): 60V Current - Continuous Drain (Id) @ 25°C: 20A Input Capacitance (Ciss) (Max) @ Vds: 2260pF @ 25V Rds On (Max) @ Id, Vgs: 15.5mOhm @ 17A, 10V Gate Charge (Qg) (Max) @ Vgs: 29nC @ 10V Vgs(th) (Max) @ Id: 4V @ 20µA Supplier Device Package: PG-TDSON-8-10 Grade: Automotive Qualification: AEC-Q101 | Produkt ist nicht verfügbar | Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
| IPG20N06S415AATMA1 | Infineon Technologies | MOSFET N-CHANNEL_55/60V | auf Bestellung 663 Stücke: Lieferzeit 10-14 Tag (e) |
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| IPG20N06S415AATMA1 | Infineon Technologies | Trans MOSFET N-CH 60V 20A Automotive 8-Pin TDSON EP T/R | Produkt ist nicht verfügbar | Mindestbestellmenge: 5000 Stücke Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
| IPG20N06S415AATMA1 | INFINEON | Description: INFINEON - IPG20N06S415AATMA1 - Dual-MOSFET, n-Kanal, 60 V, 60 V, 20 A, 20 A, 0.0155 ohm tariffCode: 85412900 euEccn: NLR rohsCompliant: YES Dauer-Drainstrom Id, p-Kanal: 20A hazardous: false rohsPhthalatesCompliant: YES Qualifikation: AEC-Q101 isCanonical: Y Drain-Source-Spannung Vds, p-Kanal: 60V MSL: MSL 1 - unbegrenzt Dauer-Drainstrom Id, n-Kanal: 20A Drain-Source-Durchgangswiderstand, p-Kanal: - Verlustleistung, p-Kanal: 50W Drain-Source-Spannung Vds, n-Kanal: 60V SVHC: No SVHC (27-Jun-2018) Bauform - Transistor: TDSON Anzahl der Pins: 8Pin(s) Produktpalette: OptiMOS T2 Series Drain-Source-Durchgangswiderstand, n-Kanal: 0.0155ohm productTraceability: Yes-Date/Lot Code usEccn: EAR99 Kanaltyp: n-Kanal Verlustleistung, n-Kanal: 50W Betriebstemperatur, max.: 175°C | auf Bestellung 3172 Stücke: Lieferzeit 14-21 Tag (e) |
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| IPG20N06S415AATMA1 | Infineon Technologies | Description: MOSFET 2N-CH 60V 20A 8TDSON Packaging: Tape & Reel (TR) Package / Case: 8-PowerVDFN Mounting Type: Surface Mount, Wettable Flank Configuration: 2 N-Channel (Dual) Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 50W Drain to Source Voltage (Vdss): 60V Current - Continuous Drain (Id) @ 25°C: 20A Input Capacitance (Ciss) (Max) @ Vds: 2260pF @ 25V Rds On (Max) @ Id, Vgs: 15.5mOhm @ 17A, 10V Gate Charge (Qg) (Max) @ Vgs: 29nC @ 10V Vgs(th) (Max) @ Id: 4V @ 20µA Supplier Device Package: PG-TDSON-8-10 Grade: Automotive Qualification: AEC-Q101 | Produkt ist nicht verfügbar | Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
| IPG20N06S415AATMA1 | Infineon Technologies | Description: MOSFET 2N-CH 60V 20A 8TDSON Packaging: Bulk Package / Case: 8-PowerVDFN Mounting Type: Surface Mount, Wettable Flank Configuration: 2 N-Channel (Dual) Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 50W Drain to Source Voltage (Vdss): 60V Current - Continuous Drain (Id) @ 25°C: 20A Input Capacitance (Ciss) (Max) @ Vds: 2260pF @ 25V Rds On (Max) @ Id, Vgs: 15.5mOhm @ 17A, 10V Gate Charge (Qg) (Max) @ Vgs: 29nC @ 10V Vgs(th) (Max) @ Id: 4V @ 20µA Supplier Device Package: PG-TDSON-8-10 Grade: Automotive Qualification: AEC-Q101 | auf Bestellung 4205 Stücke: Lieferzeit 10-14 Tag (e) |
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| IPG20N06S415AATMA1 | Infineon Technologies | Trans MOSFET N-CH 60V 20A Automotive 8-Pin TDSON EP T/R | Produkt ist nicht verfügbar | Mindestbestellmenge: 5000 Stücke Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
| IPG20N06S415ATMA1 | Infineon Technologies | Description: MOSFET 2N-CH 60V 20A 8TDSON Packaging: Tape & Reel (TR) Package / Case: 8-PowerVDFN Mounting Type: Surface Mount Configuration: 2 N-Channel (Dual) Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 50W Drain to Source Voltage (Vdss): 60V Current - Continuous Drain (Id) @ 25°C: 20A Input Capacitance (Ciss) (Max) @ Vds: 2260pF @ 25V Rds On (Max) @ Id, Vgs: 15.5mOhm @ 17A, 10V Gate Charge (Qg) (Max) @ Vgs: 29nC @ 10V Vgs(th) (Max) @ Id: 4V @ 20µA Supplier Device Package: PG-TDSON-8-4 Grade: Automotive Qualification: AEC-Q101 | Produkt ist nicht verfügbar | Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
| IPG20N06S415ATMA2 | INFINEON | Description: INFINEON - IPG20N06S415ATMA2 - Dual-MOSFET, Zweifach n-Kanal, 60 V, 20 A, 0.0129 ohm tariffCode: 85412900 rohsCompliant: Y-EX Dauer-Drainstrom Id, p-Kanal: - hazardous: false rohsPhthalatesCompliant: YES Qualifikation: AEC-Q101 Drain-Source-Spannung Vds, p-Kanal: - usEccn: EAR99 Dauer-Drainstrom Id, n-Kanal: 20A Drain-Source-Durchgangswiderstand, p-Kanal: - Verlustleistung, p-Kanal: - Drain-Source-Spannung Vds, n-Kanal: 60V euEccn: NLR Bauform - Transistor: PG-TDSON Anzahl der Pins: 8Pin(s) Produktpalette: OptiMOS -T2 Series Drain-Source-Durchgangswiderstand, n-Kanal: 0.0129ohm productTraceability: Yes-Date/Lot Code Kanaltyp: Zweifach n-Kanal Verlustleistung, n-Kanal: 50W Betriebstemperatur, max.: 175°C SVHC: Lead (21-Jan-2025) | auf Bestellung 1635 Stücke: Lieferzeit 14-21 Tag (e) |
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| IPG20N06S415ATMA2 | Infineon Technologies | Description: MOSFET 2N-CH 60V 20A 8TDSON Packaging: Cut Tape (CT) Package / Case: 8-PowerVDFN Mounting Type: Surface Mount Configuration: 2 N-Channel (Dual) Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 50W Drain to Source Voltage (Vdss): 60V Current - Continuous Drain (Id) @ 25°C: 20A Input Capacitance (Ciss) (Max) @ Vds: 2260pF @ 25V Rds On (Max) @ Id, Vgs: 15.5mOhm @ 17A, 10V Gate Charge (Qg) (Max) @ Vgs: 29nC @ 10V Vgs(th) (Max) @ Id: 4V @ 20µA Supplier Device Package: PG-TDSON-8-4 Grade: Automotive Part Status: Active Qualification: AEC-Q101 | auf Bestellung 784 Stücke: Lieferzeit 10-14 Tag (e) |
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| IPG20N06S415ATMA2 | INFINEON | Description: INFINEON - IPG20N06S415ATMA2 - Dual-MOSFET, Zweifach n-Kanal, 60 V, 20 A, 0.0129 ohm tariffCode: 85412900 rohsCompliant: Y-EX Dauer-Drainstrom Id, p-Kanal: - hazardous: false rohsPhthalatesCompliant: YES Qualifikation: AEC-Q101 Drain-Source-Spannung Vds, p-Kanal: - usEccn: EAR99 Dauer-Drainstrom Id, n-Kanal: 20A Drain-Source-Durchgangswiderstand, p-Kanal: - Verlustleistung, p-Kanal: - Drain-Source-Spannung Vds, n-Kanal: 60V euEccn: NLR Bauform - Transistor: PG-TDSON Anzahl der Pins: 8Pin(s) Produktpalette: OptiMOS -T2 Series Drain-Source-Durchgangswiderstand, n-Kanal: 0.0129ohm productTraceability: Yes-Date/Lot Code Kanaltyp: Zweifach n-Kanal Verlustleistung, n-Kanal: 50W Betriebstemperatur, max.: 175°C SVHC: Lead (21-Jan-2025) | auf Bestellung 1635 Stücke: Lieferzeit 14-21 Tag (e) |
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| IPG20N06S415ATMA2 | Infineon Technologies | MOSFETs MOSFET | auf Bestellung 156 Stücke: Lieferzeit 10-14 Tag (e) |
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| IPG20N06S415ATMA2 | Infineon Technologies | Description: MOSFET 2N-CH 60V 20A 8TDSON Packaging: Tape & Reel (TR) Package / Case: 8-PowerVDFN Mounting Type: Surface Mount Configuration: 2 N-Channel (Dual) Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 50W Drain to Source Voltage (Vdss): 60V Current - Continuous Drain (Id) @ 25°C: 20A Input Capacitance (Ciss) (Max) @ Vds: 2260pF @ 25V Rds On (Max) @ Id, Vgs: 15.5mOhm @ 17A, 10V Gate Charge (Qg) (Max) @ Vgs: 29nC @ 10V Vgs(th) (Max) @ Id: 4V @ 20µA Supplier Device Package: PG-TDSON-8-4 Grade: Automotive Part Status: Active Qualification: AEC-Q101 | Produkt ist nicht verfügbar | Mindestbestellmenge: 5000 Stücke Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
| IPG20N06S4L-11 | Infineon Technologies | MOSFETs N-Ch 60V 20A TDSON-8 OptiMOS-T2 | auf Bestellung 2851 Stücke: Lieferzeit 10-14 Tag (e) |
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| IPG20N06S4L-14 | Infineon | auf Bestellung 95092 Stücke: Lieferzeit 21-28 Tag (e) | Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||
| IPG20N06S4L-26 | Infineon | auf Bestellung 55000 Stücke: Lieferzeit 21-28 Tag (e) | Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||
| IPG20N06S4L-26 | Infineon Technologies | MOSFETs N-Ch 60V 20A TDSON-8 OptiMOS-T2 | Produkt ist nicht verfügbar | Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
| IPG20N06S4L-26A | Infineon Technologies | MOSFETs N-Ch 55V 20A TDSON-8 | Produkt ist nicht verfügbar | Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
| IPG20N06S4L11AATMA1 | Infineon Technologies | Trans MOSFET N-CH 60V 20A Automotive 8-Pin TDSON T/R | Produkt ist nicht verfügbar | Mindestbestellmenge: 5000 Stücke Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
| IPG20N06S4L11AATMA1 | Infineon Technologies | Description: MOSFET 2N-CH 60V 20A 8TDSON Packaging: Tape & Reel (TR) Package / Case: 8-PowerVDFN Mounting Type: Surface Mount, Wettable Flank Configuration: 2 N-Channel (Dual) Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 65W Drain to Source Voltage (Vdss): 60V Current - Continuous Drain (Id) @ 25°C: 20A Input Capacitance (Ciss) (Max) @ Vds: 4020pF @ 25V Rds On (Max) @ Id, Vgs: 11.2mOhm @ 17A, 10V Gate Charge (Qg) (Max) @ Vgs: 53nC @ 10V FET Feature: Logic Level Gate Vgs(th) (Max) @ Id: 2.2V @ 28µA Supplier Device Package: PG-TDSON-8-10 Part Status: Active Grade: Automotive Qualification: AEC-Q101 | Produkt ist nicht verfügbar | Mindestbestellmenge: 5000 Stücke Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
| IPG20N06S4L11AATMA1 | Infineon Technologies | MOSFETs N-CHANNEL_55/60V | auf Bestellung 2595 Stücke: Lieferzeit 10-14 Tag (e) |
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| IPG20N06S4L11AATMA1 | Infineon Technologies | Description: MOSFET 2N-CH 60V 20A 8TDSON Packaging: Cut Tape (CT) Package / Case: 8-PowerVDFN Mounting Type: Surface Mount, Wettable Flank Configuration: 2 N-Channel (Dual) Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 65W Drain to Source Voltage (Vdss): 60V Current - Continuous Drain (Id) @ 25°C: 20A Input Capacitance (Ciss) (Max) @ Vds: 4020pF @ 25V Rds On (Max) @ Id, Vgs: 11.2mOhm @ 17A, 10V Gate Charge (Qg) (Max) @ Vgs: 53nC @ 10V FET Feature: Logic Level Gate Vgs(th) (Max) @ Id: 2.2V @ 28µA Supplier Device Package: PG-TDSON-8-10 Part Status: Active Grade: Automotive Qualification: AEC-Q101 | auf Bestellung 795 Stücke: Lieferzeit 10-14 Tag (e) |
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| IPG20N06S4L11ATMA1 | Infineon Technologies | Trans MOSFET N-CH 60V 20A Automotive 8-Pin TDSON EP T/R | auf Bestellung 1737 Stücke: Lieferzeit 14-21 Tag (e) |
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| IPG20N06S4L11ATMA1 | Infineon Technologies | Description: MOSFET 2N-CH 60V 20A 8TDSON Part Status: Active Supplier Device Package: PG-TDSON-8-4 Vgs(th) (Max) @ Id: 2.2V @ 28µA FET Feature: Logic Level Gate Gate Charge (Qg) (Max) @ Vgs: 53nC @ 10V Rds On (Max) @ Id, Vgs: 11.2mOhm @ 17A, 10V Input Capacitance (Ciss) (Max) @ Vds: 4020pF @ 25V Current - Continuous Drain (Id) @ 25°C: 20A Drain to Source Voltage (Vdss): 60V Power - Max: 65W Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 175°C (TJ) Configuration: 2 N-Channel (Dual) Mounting Type: Surface Mount Package / Case: 8-PowerVDFN Packaging: Tape & Reel (TR) Qualification: AEC-Q101 Grade: Automotive | Produkt ist nicht verfügbar | Mindestbestellmenge: 5000 Stücke Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
| IPG20N06S4L11ATMA1 | INFINEON | Description: INFINEON - IPG20N06S4L11ATMA1 - Dual-MOSFET, n-Kanal, 60 V, 60 V, 20 A, 20 A, 9500 µohm tariffCode: 85412900 rohsCompliant: YES Dauer-Drainstrom Id, p-Kanal: 20A hazardous: false rohsPhthalatesCompliant: YES Qualifikation: AEC-Q101 Drain-Source-Spannung Vds, p-Kanal: 60V MSL: MSL 1 - unbegrenzt usEccn: EAR99 Dauer-Drainstrom Id, n-Kanal: 20A Drain-Source-Durchgangswiderstand, p-Kanal: 9500µohm Verlustleistung, p-Kanal: 65W Drain-Source-Spannung Vds, n-Kanal: 60V euEccn: NLR Bauform - Transistor: TDSON Anzahl der Pins: 8Pin(s) Produktpalette: OptiMOS T2 Series Drain-Source-Durchgangswiderstand, n-Kanal: 9500µohm productTraceability: No Kanaltyp: n-Kanal Verlustleistung, n-Kanal: 65W Betriebstemperatur, max.: 175°C SVHC: No SVHC (21-Jan-2025) | auf Bestellung 22658 Stücke: Lieferzeit 14-21 Tag (e) |
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| IPG20N06S4L11ATMA1 | Infineon | auf Bestellung 5000 Stücke: Lieferzeit 21-28 Tag (e) | Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||
| IPG20N06S4L11ATMA1 | Infineon Technologies | Trans MOSFET N-CH 60V 20A Automotive 8-Pin TDSON EP T/R | Produkt ist nicht verfügbar | Mindestbestellmenge: 5000 Stücke Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
| IPG20N06S4L11ATMA1 | Infineon Technologies | Description: MOSFET 2N-CH 60V 20A 8TDSON Gate Charge (Qg) (Max) @ Vgs: 53nC @ 10V Rds On (Max) @ Id, Vgs: 11.2mOhm @ 17A, 10V Input Capacitance (Ciss) (Max) @ Vds: 4020pF @ 25V Current - Continuous Drain (Id) @ 25°C: 20A Drain to Source Voltage (Vdss): 60V Power - Max: 65W Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 175°C (TJ) Configuration: 2 N-Channel (Dual) Mounting Type: Surface Mount Package / Case: 8-PowerVDFN Packaging: Cut Tape (CT) Part Status: Active Supplier Device Package: PG-TDSON-8-4 Vgs(th) (Max) @ Id: 2.2V @ 28µA Qualification: AEC-Q101 Grade: Automotive FET Feature: Logic Level Gate | auf Bestellung 3051 Stücke: Lieferzeit 10-14 Tag (e) |
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| IPG20N06S4L11ATMA1 | INFINEON | Description: INFINEON - IPG20N06S4L11ATMA1 - Dual-MOSFET, n-Kanal, 60 V, 60 V, 20 A, 20 A, 9500 µohm tariffCode: 85412900 rohsCompliant: YES Dauer-Drainstrom Id, p-Kanal: 20A hazardous: false rohsPhthalatesCompliant: YES Qualifikation: AEC-Q101 Drain-Source-Spannung Vds, p-Kanal: 60V MSL: MSL 1 - unbegrenzt usEccn: EAR99 Dauer-Drainstrom Id, n-Kanal: 20A Drain-Source-Durchgangswiderstand, p-Kanal: 9500µohm Verlustleistung, p-Kanal: 65W Drain-Source-Spannung Vds, n-Kanal: 60V euEccn: NLR Bauform - Transistor: TDSON Anzahl der Pins: 8Pin(s) Produktpalette: OptiMOS T2 Series Drain-Source-Durchgangswiderstand, n-Kanal: 9500µohm productTraceability: No Kanaltyp: n-Kanal Verlustleistung, n-Kanal: 65W Betriebstemperatur, max.: 175°C SVHC: No SVHC (21-Jan-2025) | auf Bestellung 22658 Stücke: Lieferzeit 14-21 Tag (e) |
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| IPG20N06S4L11ATMA2 | Infineon Technologies | Description: MOSFET 2N-CH 60V 20A 8TDSON Packaging: Cut Tape (CT) Package / Case: 8-PowerVDFN Mounting Type: Surface Mount, Wettable Flank Configuration: 2 N-Channel (Dual) Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 65W (Tc) Drain to Source Voltage (Vdss): 60V Current - Continuous Drain (Id) @ 25°C: 20A (Tc) Input Capacitance (Ciss) (Max) @ Vds: 4020pF @ 25V Rds On (Max) @ Id, Vgs: 11.2mOhm @ 17A, 10V Gate Charge (Qg) (Max) @ Vgs: 53nC @ 10V FET Feature: Logic Level Gate Vgs(th) (Max) @ Id: 2.2V @ 28µA Supplier Device Package: PG-TDSON-8-10 Part Status: Active Grade: Automotive Qualification: AEC-Q101 | auf Bestellung 4970 Stücke: Lieferzeit 10-14 Tag (e) |
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| IPG20N06S4L11ATMA2 | INFINEON | Description: INFINEON - IPG20N06S4L11ATMA2 - Dual-MOSFET, n-Kanal, 60 V, 60 V, 20 A, 20 A, 9500 µohm tariffCode: 85412900 euEccn: NLR rohsCompliant: YES Dauer-Drainstrom Id, p-Kanal: 20A hazardous: false rohsPhthalatesCompliant: YES Qualifikation: AEC-Q101 isCanonical: Y Drain-Source-Spannung Vds, p-Kanal: 60V MSL: MSL 1 - unbegrenzt Dauer-Drainstrom Id, n-Kanal: 20A Drain-Source-Durchgangswiderstand, p-Kanal: 9500µohm Verlustleistung, p-Kanal: 65W Drain-Source-Spannung Vds, n-Kanal: 60V SVHC: No SVHC (25-Jun-2025) Bauform - Transistor: TDSON Anzahl der Pins: 8Pin(s) Produktpalette: OptiMOS-T2 Series Drain-Source-Durchgangswiderstand, n-Kanal: 9500µohm productTraceability: Yes-Date/Lot Code usEccn: EAR99 Kanaltyp: n-Kanal Verlustleistung, n-Kanal: 65W Betriebstemperatur, max.: 175°C | auf Bestellung 20017 Stücke: Lieferzeit 14-21 Tag (e) |
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| IPG20N06S4L11ATMA2 | Infineon Technologies | Description: MOSFET 2N-CH 60V 20A 8TDSON Packaging: Tape & Reel (TR) Package / Case: 8-PowerVDFN Mounting Type: Surface Mount, Wettable Flank Configuration: 2 N-Channel (Dual) Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 65W (Tc) Drain to Source Voltage (Vdss): 60V Current - Continuous Drain (Id) @ 25°C: 20A (Tc) Input Capacitance (Ciss) (Max) @ Vds: 4020pF @ 25V Rds On (Max) @ Id, Vgs: 11.2mOhm @ 17A, 10V Gate Charge (Qg) (Max) @ Vgs: 53nC @ 10V FET Feature: Logic Level Gate Vgs(th) (Max) @ Id: 2.2V @ 28µA Supplier Device Package: PG-TDSON-8-10 Part Status: Active Grade: Automotive Qualification: AEC-Q101 | Produkt ist nicht verfügbar | Mindestbestellmenge: 5000 Stücke Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
| IPG20N06S4L11ATMA2 | INFINEON | Description: INFINEON - IPG20N06S4L11ATMA2 - Dual-MOSFET, n-Kanal, 60 V, 60 V, 20 A, 20 A, 9500 µohm tariffCode: 85412900 euEccn: NLR rohsCompliant: YES Dauer-Drainstrom Id, p-Kanal: 20A hazardous: false rohsPhthalatesCompliant: YES Qualifikation: AEC-Q101 isCanonical: N Drain-Source-Spannung Vds, p-Kanal: 60V MSL: MSL 1 - unbegrenzt Dauer-Drainstrom Id, n-Kanal: 20A Drain-Source-Durchgangswiderstand, p-Kanal: 9500µohm Verlustleistung, p-Kanal: 65W Drain-Source-Spannung Vds, n-Kanal: 60V SVHC: No SVHC (25-Jun-2025) Bauform - Transistor: TDSON Anzahl der Pins: 8Pin(s) Produktpalette: OptiMOS-T2 Series Drain-Source-Durchgangswiderstand, n-Kanal: 9500µohm productTraceability: Yes-Date/Lot Code usEccn: EAR99 Kanaltyp: n-Kanal Verlustleistung, n-Kanal: 65W Betriebstemperatur, max.: 175°C | auf Bestellung 20017 Stücke: Lieferzeit 14-21 Tag (e) |
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| IPG20N06S4L11ATMA2 | Infineon Technologies | MOSFETs MOSFET_)40V 60V) | auf Bestellung 9278 Stücke: Lieferzeit 10-14 Tag (e) |
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| IPG20N06S4L14AATMA1 | Infineon Technologies | Description: MOSFET 2N-CH 60V 20A 8TDSON Packaging: Cut Tape (CT) Package / Case: 8-PowerVDFN Mounting Type: Surface Mount, Wettable Flank Configuration: 2 N-Channel (Dual) Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 50W Drain to Source Voltage (Vdss): 60V Current - Continuous Drain (Id) @ 25°C: 20A Input Capacitance (Ciss) (Max) @ Vds: 2890pF @ 25V Rds On (Max) @ Id, Vgs: 13.7mOhm @ 17A, 10V Gate Charge (Qg) (Max) @ Vgs: 39nC @ 10V FET Feature: Logic Level Gate Vgs(th) (Max) @ Id: 2.2V @ 20µA Supplier Device Package: PG-TDSON-8-10 Part Status: Active Grade: Automotive Qualification: AEC-Q101 | auf Bestellung 28282 Stücke: Lieferzeit 10-14 Tag (e) |
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| IPG20N06S4L14AATMA1 | INFINEON | Description: INFINEON - IPG20N06S4L14AATMA1 - Dual-MOSFET, n-Kanal, 60 V, 60 V, 20 A, 20 A, 0.0137 ohm tariffCode: 85412900 euEccn: NLR rohsCompliant: YES Dauer-Drainstrom Id, p-Kanal: 20A hazardous: false rohsPhthalatesCompliant: YES Qualifikation: AEC-Q101 isCanonical: Y Drain-Source-Spannung Vds, p-Kanal: 60V MSL: - Dauer-Drainstrom Id, n-Kanal: 20A Drain-Source-Durchgangswiderstand, p-Kanal: - Verlustleistung, p-Kanal: 50W Drain-Source-Spannung Vds, n-Kanal: 60V SVHC: No SVHC (25-Jun-2025) Bauform - Transistor: TDSON Anzahl der Pins: 8Pin(s) Produktpalette: OptiMOS T2 Series Drain-Source-Durchgangswiderstand, n-Kanal: 0.0137ohm productTraceability: Yes-Date/Lot Code usEccn: EAR99 Kanaltyp: n-Kanal Verlustleistung, n-Kanal: 50W Betriebstemperatur, max.: 175°C | auf Bestellung 17999 Stücke: Lieferzeit 14-21 Tag (e) |
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| IPG20N06S4L14AATMA1 | Infineon Technologies | MOSFETs MOSFET_)40V 60V) | auf Bestellung 2205 Stücke: Lieferzeit 10-14 Tag (e) |
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| IPG20N06S4L14AATMA1 | Infineon Technologies | Description: MOSFET 2N-CH 60V 20A 8TDSON Packaging: Tape & Reel (TR) Package / Case: 8-PowerVDFN Mounting Type: Surface Mount, Wettable Flank Configuration: 2 N-Channel (Dual) Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 50W Drain to Source Voltage (Vdss): 60V Current - Continuous Drain (Id) @ 25°C: 20A Input Capacitance (Ciss) (Max) @ Vds: 2890pF @ 25V Rds On (Max) @ Id, Vgs: 13.7mOhm @ 17A, 10V Gate Charge (Qg) (Max) @ Vgs: 39nC @ 10V FET Feature: Logic Level Gate Vgs(th) (Max) @ Id: 2.2V @ 20µA Supplier Device Package: PG-TDSON-8-10 Grade: Automotive Part Status: Active Qualification: AEC-Q101 | auf Bestellung 25000 Stücke: Lieferzeit 10-14 Tag (e) |
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| IPG20N06S4L14AATMA1 | INFINEON | Description: INFINEON - IPG20N06S4L14AATMA1 - Dual-MOSFET, n-Kanal, 60 V, 60 V, 20 A, 20 A, 0.0137 ohm tariffCode: 85412900 euEccn: NLR rohsCompliant: YES Dauer-Drainstrom Id, p-Kanal: 20A hazardous: false rohsPhthalatesCompliant: YES Qualifikation: AEC-Q101 isCanonical: N Drain-Source-Spannung Vds, p-Kanal: 60V MSL: - Dauer-Drainstrom Id, n-Kanal: 20A Drain-Source-Durchgangswiderstand, p-Kanal: - Verlustleistung, p-Kanal: 50W Drain-Source-Spannung Vds, n-Kanal: 60V SVHC: No SVHC (25-Jun-2025) Bauform - Transistor: TDSON Anzahl der Pins: 8Pin(s) Produktpalette: OptiMOS T2 Series Drain-Source-Durchgangswiderstand, n-Kanal: 0.0137ohm productTraceability: Yes-Date/Lot Code usEccn: EAR99 Kanaltyp: n-Kanal Verlustleistung, n-Kanal: 50W Betriebstemperatur, max.: 175°C | auf Bestellung 17999 Stücke: Lieferzeit 14-21 Tag (e) |
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| IPG20N06S4L14AATMA1 | Infineon Technologies | Trans MOSFET N-CH 60V 20A Automotive 8-Pin TDSON EP T/R | auf Bestellung 401 Stücke: Lieferzeit 14-21 Tag (e) |
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| IPG20N06S4L14ATMA1 | Infineon Technologies | Description: MOSFET 2N-CH 60V 20A 8TDSON Packaging: Tape & Reel (TR) Package / Case: 8-PowerVDFN Mounting Type: Surface Mount Configuration: 2 N-Channel (Dual) Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 50W Drain to Source Voltage (Vdss): 60V Current - Continuous Drain (Id) @ 25°C: 20A Input Capacitance (Ciss) (Max) @ Vds: 2890pF @ 25V Rds On (Max) @ Id, Vgs: 13.7mOhm @ 17A, 10V Gate Charge (Qg) (Max) @ Vgs: 39nC @ 10V FET Feature: Logic Level Gate Vgs(th) (Max) @ Id: 2.2V @ 20µA Supplier Device Package: PG-TDSON-8-4 Grade: Automotive Qualification: AEC-Q101 | Produkt ist nicht verfügbar | Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
| IPG20N06S4L14ATMA2 | Infineon Technologies | MOSFETs MOSFET | Produkt ist nicht verfügbar | Mindestbestellmenge: 5000 Stücke Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
| IPG20N06S4L14ATMA2 | Infineon Technologies | Description: MOSFET 2N-CH 60V 20A 8TDSON Packaging: Cut Tape (CT) Package / Case: 8-PowerVDFN Mounting Type: Surface Mount Configuration: 2 N-Channel (Dual) Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 50W Drain to Source Voltage (Vdss): 60V Current - Continuous Drain (Id) @ 25°C: 20A Input Capacitance (Ciss) (Max) @ Vds: 2890pF @ 25V Rds On (Max) @ Id, Vgs: 13.7mOhm @ 17A, 10V Gate Charge (Qg) (Max) @ Vgs: 39nC @ 10V FET Feature: Logic Level Gate Vgs(th) (Max) @ Id: 2.2V @ 20µA Supplier Device Package: PG-TDSON-8-4 Part Status: Active Grade: Automotive Qualification: AEC-Q101 | auf Bestellung 7265 Stücke: Lieferzeit 10-14 Tag (e) |
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| IPG20N06S4L14ATMA2 | Infineon Technologies | Description: MOSFET 2N-CH 60V 20A 8TDSON Packaging: Tape & Reel (TR) Package / Case: 8-PowerVDFN Mounting Type: Surface Mount Configuration: 2 N-Channel (Dual) Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 50W Drain to Source Voltage (Vdss): 60V Current - Continuous Drain (Id) @ 25°C: 20A Input Capacitance (Ciss) (Max) @ Vds: 2890pF @ 25V Rds On (Max) @ Id, Vgs: 13.7mOhm @ 17A, 10V Gate Charge (Qg) (Max) @ Vgs: 39nC @ 10V FET Feature: Logic Level Gate Vgs(th) (Max) @ Id: 2.2V @ 20µA Supplier Device Package: PG-TDSON-8-4 Part Status: Active Grade: Automotive Qualification: AEC-Q101 | auf Bestellung 5000 Stücke: Lieferzeit 10-14 Tag (e) |
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| IPG20N06S4L14ATMA2 | Infineon Technologies | Trans MOSFET N-CH 60V 20A Automotive 8-Pin TDSON EP T/R | Produkt ist nicht verfügbar | Mindestbestellmenge: 5000 Stücke Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
| IPG20N06S4L26AATMA1 | Infineon Technologies | Trans MOSFET N-CH 60V 20A Automotive 8-Pin TDSON EP T/R | Produkt ist nicht verfügbar | Mindestbestellmenge: 5000 Stücke Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
| IPG20N06S4L26AATMA1 | Infineon Technologies | Description: MOSFET 2N-CH 60V 20A 8TDSON Packaging: Cut Tape (CT) Package / Case: 8-PowerVDFN Mounting Type: Surface Mount, Wettable Flank Configuration: 2 N-Channel (Dual) Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 33W Drain to Source Voltage (Vdss): 60V Current - Continuous Drain (Id) @ 25°C: 20A Input Capacitance (Ciss) (Max) @ Vds: 1430pF @ 25V Rds On (Max) @ Id, Vgs: 26mOhm @ 17A, 10V Gate Charge (Qg) (Max) @ Vgs: 20nC @ 10V FET Feature: Logic Level Gate Vgs(th) (Max) @ Id: 2.2V @ 10µA Supplier Device Package: PG-TDSON-8-10 Grade: Automotive Part Status: Active Qualification: AEC-Q101 | Produkt ist nicht verfügbar | Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
| IPG20N06S4L26AATMA1 | Infineon Technologies | MOSFETs N-Ch 55V 20A TDSON-8 | Produkt ist nicht verfügbar | Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
| IPG20N06S4L26AATMA1 | Infineon Technologies | Description: MOSFET 2N-CH 60V 20A 8TDSON Packaging: Tape & Reel (TR) Package / Case: 8-PowerVDFN Mounting Type: Surface Mount, Wettable Flank Configuration: 2 N-Channel (Dual) Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 33W Drain to Source Voltage (Vdss): 60V Current - Continuous Drain (Id) @ 25°C: 20A Input Capacitance (Ciss) (Max) @ Vds: 1430pF @ 25V Rds On (Max) @ Id, Vgs: 26mOhm @ 17A, 10V Gate Charge (Qg) (Max) @ Vgs: 20nC @ 10V FET Feature: Logic Level Gate Vgs(th) (Max) @ Id: 2.2V @ 10µA Supplier Device Package: PG-TDSON-8-10 Grade: Automotive Part Status: Active Qualification: AEC-Q101 | Produkt ist nicht verfügbar | Mindestbestellmenge: 5000 Stücke Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
| IPG20N06S4L26AATMA1 | Infineon Technologies | Trans MOSFET N-CH 60V 20A Automotive 8-Pin TDSON EP T/R | Produkt ist nicht verfügbar | Mindestbestellmenge: 5000 Stücke Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
| IPG20N06S4L26AATMA1 | Infineon Technologies | Description: MOSFET 2N-CH 60V 20A 8TDSON Packaging: Bulk Package / Case: 8-PowerVDFN Mounting Type: Surface Mount, Wettable Flank Configuration: 2 N-Channel (Dual) Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 33W Drain to Source Voltage (Vdss): 60V Current - Continuous Drain (Id) @ 25°C: 20A Input Capacitance (Ciss) (Max) @ Vds: 1430pF @ 25V Rds On (Max) @ Id, Vgs: 26mOhm @ 17A, 10V Gate Charge (Qg) (Max) @ Vgs: 20nC @ 10V FET Feature: Logic Level Gate Vgs(th) (Max) @ Id: 2.2V @ 10µA Supplier Device Package: PG-TDSON-8-10 Grade: Automotive Qualification: AEC-Q101 | auf Bestellung 2310 Stücke: Lieferzeit 10-14 Tag (e) |
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