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PJQ5451E-AU_R2_006A1Panjit International Inc.Description: 40V P-CHANNEL ENHANCEMENT MODE M
Package / Case: 8-PowerVDFN
Packaging: Tape & Reel (TR)
Qualification: AEC-Q101
Input Capacitance (Ciss) (Max) @ Vds: 3300 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 59 nC @ 10 V
Drain to Source Voltage (Vdss): 40 V
Vgs (Max): ±25V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Grade: Automotive
Supplier Device Package: DFN5060-8
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Power Dissipation (Max): 3.3W (Ta), 75W (Tc)
Rds On (Max) @ Id, Vgs: 9.4mOhm @ 20A, 10V
Current - Continuous Drain (Id) @ 25°C: 14A (Ta), 67A (Tc)
FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
auf Bestellung 3000 Stücke:
Lieferzeit 10-14 Tag (e)
3000+0.7 EUR
Mindestbestellmenge: 3000 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
PJQ5451E-AU_R2_006A1Panjit International Inc.Description: 40V P-CHANNEL ENHANCEMENT MODE M
Qualification: AEC-Q101
Input Capacitance (Ciss) (Max) @ Vds: 3300 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 59 nC @ 10 V
Drain to Source Voltage (Vdss): 40 V
Vgs (Max): ±25V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Grade: Automotive
Supplier Device Package: DFN5060-8
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Power Dissipation (Max): 3.3W (Ta), 75W (Tc)
Rds On (Max) @ Id, Vgs: 9.4mOhm @ 20A, 10V
Current - Continuous Drain (Id) @ 25°C: 14A (Ta), 67A (Tc)
FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-PowerVDFN
Packaging: Cut Tape (CT)
auf Bestellung 3833 Stücke:
Lieferzeit 10-14 Tag (e)
8+2.7 EUR
13+1.7 EUR
100+1.13 EUR
500+0.88 EUR
1000+0.8 EUR
Mindestbestellmenge: 8 Stücke
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PJQ5453-AU-R2-000A1PanjitMOSFETs
Produkt ist nicht verfügbar
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PJQ5453-R2-00001PanjitMOSFETs
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PJQ5453E-AU-R2-002A1PanjitMOSFETs DFN5060-8L/MOS/DFN/NFET-40FKMP
Produkt ist nicht verfügbar
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PJQ5453E-AU_R2_002A1Panjit International Inc.Description: 40V P-CHANNEL ENHANCEMENT MODE M
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 12.8A (Ta), 61A (Tc)
Rds On (Max) @ Id, Vgs: 11.3mOhm @ 20A, 10V
Power Dissipation (Max): 3.3W (Ta), 75W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: DFN5060-8
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±25V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 56 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2858 pF @ 25 V
Qualification: AEC-Q101
Produkt ist nicht verfügbar
 Mindestbestellmenge: 6000 Stücke
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PJQ5453E-AU_R2_002A1PanjitMOSFETs 40V P-Channel Enhancement Mode MOSFET
auf Bestellung 1223 Stücke:
Lieferzeit 10-14 Tag (e)
2+2.07 EUR
10+1.3 EUR
100+0.86 EUR
500+0.83 EUR
Mindestbestellmenge: 2 Stücke
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PJQ5453E-AU_R2_002A1Panjit International Inc.Description: 40V P-CHANNEL ENHANCEMENT MODE M
Packaging: Cut Tape (CT)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 12.8A (Ta), 61A (Tc)
Rds On (Max) @ Id, Vgs: 11.3mOhm @ 20A, 10V
Power Dissipation (Max): 3.3W (Ta), 75W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: DFN5060-8
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±25V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 56 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2858 pF @ 25 V
Qualification: AEC-Q101
auf Bestellung 560 Stücke:
Lieferzeit 10-14 Tag (e)
9+2.43 EUR
14+1.52 EUR
100+1.01 EUR
500+0.79 EUR
Mindestbestellmenge: 9 Stücke
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PJQ5458A-AU_R2_000A1Panjit International Inc.Description: 60V N-CHANNEL ENHANCEMENT MODE M
auf Bestellung 1193 Stücke:
Lieferzeit 10-14 Tag (e)
15+1.46 EUR
17+1.3 EUR
100+0.99 EUR
500+0.79 EUR
1000+0.63 EUR
Mindestbestellmenge: 15 Stücke
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PJQ5458A-AU_R2_000A1PanjitMOSFETs 60V N-Channel Enhancement Mode MOSFET
auf Bestellung 22724 Stücke:
Lieferzeit 10-14 Tag (e)
3+1.57 EUR
10+1.33 EUR
100+0.83 EUR
500+0.57 EUR
1000+0.48 EUR
3000+0.37 EUR
6000+0.33 EUR
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PJQ5458A-AU_R2_000A1PanJit SemiconductorCategory: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 16A; DFN5060-8
Application: automotive industry
Kind of package: reel; tape
Case: DFN5060-8
Kind of channel: enhancement
Mounting: SMD
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain current: 16A
Gate-source voltage: 20V
Drain-source voltage: 60V
Produkt ist nicht verfügbar
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PJQ5458A-AU_R2_000A1Panjit International Inc.Description: 60V N-CHANNEL ENHANCEMENT MODE M
Produkt ist nicht verfügbar
 Mindestbestellmenge: 3000 Stücke
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PJQ5458A_R2_00001Panjit International Inc.Description: 60V N-CHANNEL ENHANCEMENT MODE M
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 4.4A (Ta), 16A (Tc)
Rds On (Max) @ Id, Vgs: 50mOhm @ 8A, 10V
Power Dissipation (Max): 2W (Ta), 27W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: DFN5060-8
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 14 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 815 pF @ 15 V
Produkt ist nicht verfügbar
 Mindestbestellmenge: 3000 Stücke
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PJQ5458A_R2_00001PanjitMOSFETs 60V N-Channel Enhancement Mode MOSFET
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PJQ54601A-AU_R2_002A1PanjitMOSFETs 60V P-Channel Enhancement Mode MOSFET
Produkt ist nicht verfügbar
 Mindestbestellmenge: 3000 Stücke
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PJQ5460A_R2_00001PanjitMOSFET 60V N-Channel Enhancement Mode MOSFET
Produkt ist nicht verfügbar
 Mindestbestellmenge: 4 Stücke
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PJQ5461A-AU-R2-000A1PanjitMOSFETs
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PJQ5461A-AU_R2_000A1Panjit International Inc.Description: 60V P-CHANNEL ENHANCEMENT MODE M
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 3.2A (Ta), 11.5A (Tc)
Rds On (Max) @ Id, Vgs: 110mOhm @ 6A, 10V
Power Dissipation (Max): 2W (Ta), 26W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: DFN5060-8
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 10 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 785 pF @ 30 V
Qualification: AEC-Q101
Produkt ist nicht verfügbar
 Mindestbestellmenge: 3000 Stücke
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PJQ5461A-R2-00001PanjitMOSFETs
Produkt ist nicht verfügbar
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PJQ5461A_R2_00001Panjit International Inc.Description: 60V P-CHANNEL ENHANCEMENT MODE M
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 3.2A (Ta), 11.5A (Tc)
Rds On (Max) @ Id, Vgs: 110mOhm @ 6A, 10V
Power Dissipation (Max): 2W (Ta), 26W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: DFN5060-8
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 10 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 785 pF @ 30 V
Produkt ist nicht verfügbar
 Mindestbestellmenge: 3000 Stücke
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PJQ5462AJGSEMITransistor P-Channel MOSFET; 60V; 20V; 22mOhm; 50A; 87,7W; -55°C ~ 175°C; Equivalent: PJQ5462A_R2_00001; PJQ5462A JGSEMI TPJQ5462A JGS
Anzahl je Verpackung: 50 Stücke
auf Bestellung 200 Stücke:
Lieferzeit 7-14 Tag (e)
100+0.57 EUR
Mindestbestellmenge: 100 Stücke
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PJQ5462A-AU_R2_000A1Panjit International Inc.Description: 60V N-CHANNEL ENHANCEMENT MODE M
Packaging: Cut Tape (CT)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 8.5A (Ta), 42A (Tc)
Rds On (Max) @ Id, Vgs: 12mOhm @ 20A, 10V
Power Dissipation (Max): 2.4W (Ta), 71.4W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: DFN5060-8
Grade: Automotive
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 40 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2142 pF @ 25 V
Qualification: AEC-Q101
auf Bestellung 5336 Stücke:
Lieferzeit 10-14 Tag (e)
7+3.28 EUR
10+2.09 EUR
100+1.4 EUR
500+1.11 EUR
1000+1.01 EUR
Mindestbestellmenge: 7 Stücke
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PJQ5462A-AU_R2_000A1Panjit International Inc.Description: 60V N-CHANNEL ENHANCEMENT MODE M
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 8.5A (Ta), 42A (Tc)
Rds On (Max) @ Id, Vgs: 12mOhm @ 20A, 10V
Power Dissipation (Max): 2.4W (Ta), 71.4W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: DFN5060-8
Grade: Automotive
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 40 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2142 pF @ 25 V
Qualification: AEC-Q101
Produkt ist nicht verfügbar
 Mindestbestellmenge: 3000 Stücke
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PJQ5462A-AU_R2_000A1PanjitMOSFETs 60V N-Channel Enhancement Mode MOSFET
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PJQ5462A_R2_00001Panjit International Inc.Description: 60V N-CHANNEL ENHANCEMENT MODE M
Packaging: Cut Tape (CT)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 8.5A (Ta), 42A (Tc)
Rds On (Max) @ Id, Vgs: 12mOhm @ 20A, 10V
Power Dissipation (Max): 2W (Ta), 60W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: DFN5060-8
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 40 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2142 pF @ 25 V
auf Bestellung 2846 Stücke:
Lieferzeit 10-14 Tag (e)
11+2.01 EUR
17+1.26 EUR
100+0.82 EUR
500+0.63 EUR
1000+0.57 EUR
Mindestbestellmenge: 11 Stücke
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PJQ5462A_R2_00001PanjitMOSFETs 60V N-Channel Enhancement Mode MOSFET
Produkt ist nicht verfügbar
 Mindestbestellmenge: 4 Stücke
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PJQ5462A_R2_00001Panjit International Inc.Description: 60V N-CHANNEL ENHANCEMENT MODE M
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 8.5A (Ta), 42A (Tc)
Rds On (Max) @ Id, Vgs: 12mOhm @ 20A, 10V
Power Dissipation (Max): 2W (Ta), 60W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: DFN5060-8
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 40 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2142 pF @ 25 V
Produkt ist nicht verfügbar
 Mindestbestellmenge: 3000 Stücke
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PJQ5463A-AU-R2-000A1PanjitMOSFETs
Produkt ist nicht verfügbar
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PJQ5463A-AU_R2_000A1Panjit International Inc.Description: 60V P-CHANNEL ENHANCEMENT MODE M
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 4A (Ta), 15A (Tc)
Rds On (Max) @ Id, Vgs: 68mOhm @ 7.5A, 10V
Power Dissipation (Max): 2W (Ta), 25W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: DFN5060-8
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 17 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 879 pF @ 30 V
Qualification: AEC-Q101
Produkt ist nicht verfügbar
 Mindestbestellmenge: 3000 Stücke
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PJQ5463A-R2-00001PanjitMOSFETs
Produkt ist nicht verfügbar
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PJQ5463A_R2_00001PanjitMOSFET PJ/Q5463A/TR/13"/HF/3K/DFN5060-8L/MOS/DFN/NFET-60FKMP//PJ/DFN50608L-AS55/PJQ5463A-ASV1/DFN50808L-AS01
Produkt ist nicht verfügbar
 Mindestbestellmenge: 3000 Stücke
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PJQ5463A_R2_00001Panjit International Inc.Description: 60V P-CHANNEL ENHANCEMENT MODE M
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 4A (Ta), 15A (Tc)
Rds On (Max) @ Id, Vgs: 68mOhm @ 7.5A, 10V
Power Dissipation (Max): 2W (Ta), 25W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: DFN5060-8
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 17 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 879 pF @ 30 V
Produkt ist nicht verfügbar
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PJQ5464A-R2-00001PanjitMOSFETs
Produkt ist nicht verfügbar
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PJQ5465A-AU-R2-000A1PanjitMOSFETs
Produkt ist nicht verfügbar
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PJQ5465A-AU_R2_000A1Panjit International Inc.Description: 60V P-CHANNEL ENHANCEMENT MODE M
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 5A (Ta), 16A (Tc)
Rds On (Max) @ Id, Vgs: 48mOhm @ 8A, 10V
Power Dissipation (Max): 2W (Ta), 25W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: DFN5060-8
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 22 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1256 pF @ 30 V
Qualification: AEC-Q101
Produkt ist nicht verfügbar
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PJQ5465A-R2-00001PanjitMOSFETs DFN5060-8L/MOS/DFN/NFET-60FKMP
Produkt ist nicht verfügbar
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PJQ5465A_R2_00001Panjit International Inc.Description: 60V P-CHANNEL ENHANCEMENT MODE M
Input Capacitance (Ciss) (Max) @ Vds: 1256 pF @ 30 V
Gate Charge (Qg) (Max) @ Vgs: 22 nC @ 10 V
Drain to Source Voltage (Vdss): 60 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Part Status: Active
Supplier Device Package: DFN5060-8
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Power Dissipation (Max): 2W (Ta), 25W (Tc)
Rds On (Max) @ Id, Vgs: 48mOhm @ 8A, 10V
Current - Continuous Drain (Id) @ 25°C: 5A (Ta), 16A (Tc)
FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-PowerVDFN
Packaging: Cut Tape (CT)
auf Bestellung 3739 Stücke:
Lieferzeit 10-14 Tag (e)
12+1.87 EUR
19+1.17 EUR
100+0.75 EUR
500+0.58 EUR
1000+0.52 EUR
Mindestbestellmenge: 12 Stücke
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PJQ5465A_R2_00001Panjit International Inc.Description: 60V P-CHANNEL ENHANCEMENT MODE M
Input Capacitance (Ciss) (Max) @ Vds: 1256 pF @ 30 V
Gate Charge (Qg) (Max) @ Vgs: 22 nC @ 10 V
Drain to Source Voltage (Vdss): 60 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Part Status: Active
Supplier Device Package: DFN5060-8
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Power Dissipation (Max): 2W (Ta), 25W (Tc)
Rds On (Max) @ Id, Vgs: 48mOhm @ 8A, 10V
Current - Continuous Drain (Id) @ 25°C: 5A (Ta), 16A (Tc)
FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-PowerVDFN
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar
 Mindestbestellmenge: 3000 Stücke
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PJQ5466A-AU_R2_000A1Panjit International Inc.Description: 60V N-CHANNEL ENHANCEMENT MODE M
Qualification: AEC-Q101
Grade: Automotive
Input Capacitance (Ciss) (Max) @ Vds: 1680 pF @ 20 V
Gate Charge (Qg) (Max) @ Vgs: 28 nC @ 10 V
Drain to Source Voltage (Vdss): 60 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Part Status: Active
Supplier Device Package: DFN5060-8
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Power Dissipation (Max): 2.4W (Ta), 100W (Tc)
Rds On (Max) @ Id, Vgs: 21mOhm @ 15A, 10V
Current - Continuous Drain (Id) @ 25°C: 6.5A (Ta), 40A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-PowerVDFN
Packaging: Cut Tape (CT)
auf Bestellung 2866 Stücke:
Lieferzeit 10-14 Tag (e)
10+2.12 EUR
16+1.33 EUR
100+0.87 EUR
500+0.68 EUR
1000+0.62 EUR
Mindestbestellmenge: 10 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
PJQ5466A-AU_R2_000A1Panjit International Inc.Description: 60V N-CHANNEL ENHANCEMENT MODE M
Qualification: AEC-Q101
Grade: Automotive
Input Capacitance (Ciss) (Max) @ Vds: 1680 pF @ 20 V
Gate Charge (Qg) (Max) @ Vgs: 28 nC @ 10 V
Drain to Source Voltage (Vdss): 60 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Part Status: Active
Supplier Device Package: DFN5060-8
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Power Dissipation (Max): 2.4W (Ta), 100W (Tc)
Rds On (Max) @ Id, Vgs: 21mOhm @ 15A, 10V
Current - Continuous Drain (Id) @ 25°C: 6.5A (Ta), 40A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-PowerVDFN
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar
 Mindestbestellmenge: 3000 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
PJQ5466A1-AU_R2_000A1Panjit International Inc.Description: 60V N-CHANNEL ENHANCEMENT MODE M
Qualification: AEC-Q101
Grade: Automotive
Input Capacitance (Ciss) (Max) @ Vds: 1574 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 13.5 nC @ 4.5 V
Drain to Source Voltage (Vdss): 60 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Part Status: Active
Supplier Device Package: DFN5060-8
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Power Dissipation (Max): 2.4W (Ta), 100W (Tc)
Rds On (Max) @ Id, Vgs: 17mOhm @ 20A, 10V
Current - Continuous Drain (Id) @ 25°C: 7.4A (Ta), 48A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-PowerVDFN
Packaging: Tape & Reel (TR)
auf Bestellung 3000 Stücke:
Lieferzeit 10-14 Tag (e)
3000+0.69 EUR
Mindestbestellmenge: 3000 Stücke
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PJQ5466A1-AU_R2_000A1PanjitMOSFETs 60V N-Channel Enhancement Mode MOSFET
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 Mindestbestellmenge: 3000 Stücke
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PJQ5466A1-AU_R2_000A1Panjit International Inc.Description: 60V N-CHANNEL ENHANCEMENT MODE M
Qualification: AEC-Q101
Grade: Automotive
Input Capacitance (Ciss) (Max) @ Vds: 1574 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 13.5 nC @ 4.5 V
Drain to Source Voltage (Vdss): 60 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Part Status: Active
Supplier Device Package: DFN5060-8
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Power Dissipation (Max): 2.4W (Ta), 100W (Tc)
Rds On (Max) @ Id, Vgs: 17mOhm @ 20A, 10V
Current - Continuous Drain (Id) @ 25°C: 7.4A (Ta), 48A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-PowerVDFN
Packaging: Cut Tape (CT)
auf Bestellung 4252 Stücke:
Lieferzeit 10-14 Tag (e)
8+2.68 EUR
13+1.69 EUR
100+1.12 EUR
500+0.87 EUR
1000+0.8 EUR
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PJQ5466A1-R2-00001PanjitMOSFETs
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
PJQ5466A1_R2_00001Panjit International Inc.Description: 60V N-CHANNEL ENHANCEMENT MODE M
Input Capacitance (Ciss) (Max) @ Vds: 1574 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 13.5 nC @ 4.5 V
Drain to Source Voltage (Vdss): 60 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Part Status: Active
Supplier Device Package: DFN5060-8
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Power Dissipation (Max): 2W (Ta), 83W (Tc)
Rds On (Max) @ Id, Vgs: 17mOhm @ 20A, 10V
Current - Continuous Drain (Id) @ 25°C: 7.4A (Ta), 48A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-PowerVDFN
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar
 Mindestbestellmenge: 3000 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
PJQ5466A1_R2_00001PanjitMOSFETs 60V N-Channel Enhancement Mode MOSFET
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 Mindestbestellmenge: 3 Stücke
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PJQ5466A1_R2_00001Panjit International Inc.Description: 60V N-CHANNEL ENHANCEMENT MODE M
Input Capacitance (Ciss) (Max) @ Vds: 1574 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 13.5 nC @ 4.5 V
Drain to Source Voltage (Vdss): 60 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Part Status: Active
Supplier Device Package: DFN5060-8
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Power Dissipation (Max): 2W (Ta), 83W (Tc)
Rds On (Max) @ Id, Vgs: 17mOhm @ 20A, 10V
Current - Continuous Drain (Id) @ 25°C: 7.4A (Ta), 48A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-PowerVDFN
Packaging: Cut Tape (CT)
auf Bestellung 1970 Stücke:
Lieferzeit 10-14 Tag (e)
11+1.93 EUR
18+1.2 EUR
100+0.79 EUR
500+0.61 EUR
1000+0.55 EUR
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PJQ5466A_R2_00001PanjitMOSFET PJ/Q5466A/TR/13"/HF/3K/DFN5060-8L/MOS/DFN/NFET-60FKMN//PJ/DFN50608L-AS30/DFN50608L-AS06/DFN50608L-AS01
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
PJQ5466A_R2_00001Panjit International Inc.Description: 60V N-CHANNEL ENHANCEMENT MODE M
Current - Continuous Drain (Id) @ 25°C: 6.5A (Ta), 40A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-PowerVDFN
Packaging: Tape & Reel (TR)
Input Capacitance (Ciss) (Max) @ Vds: 1680 pF @ 20 V
Gate Charge (Qg) (Max) @ Vgs: 28 nC @ 10 V
Drain to Source Voltage (Vdss): 60 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Part Status: Active
Supplier Device Package: DFN5060-8
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Power Dissipation (Max): 2W (Ta), 83W (Tc)
Rds On (Max) @ Id, Vgs: 21mOhm @ 15A, 10V
Produkt ist nicht verfügbar
 Mindestbestellmenge: 3000 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
PJQ5466A_R2_00001Panjit International Inc.Description: 60V N-CHANNEL ENHANCEMENT MODE M
Current - Continuous Drain (Id) @ 25°C: 6.5A (Ta), 40A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-PowerVDFN
Packaging: Cut Tape (CT)
Input Capacitance (Ciss) (Max) @ Vds: 1680 pF @ 20 V
Gate Charge (Qg) (Max) @ Vgs: 28 nC @ 10 V
Drain to Source Voltage (Vdss): 60 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Part Status: Active
Supplier Device Package: DFN5060-8
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Power Dissipation (Max): 2W (Ta), 83W (Tc)
Rds On (Max) @ Id, Vgs: 21mOhm @ 15A, 10V
auf Bestellung 2896 Stücke:
Lieferzeit 10-14 Tag (e)
13+1.71 EUR
20+1.07 EUR
100+0.7 EUR
500+0.54 EUR
1000+0.49 EUR
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PJQ5468A_R2_00001Panjit International Inc.Description: 60V N-CHANNEL ENHANCEMENT MODE M
Input Capacitance (Ciss) (Max) @ Vds: 1173 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 20 nC @ 10 V
Drain to Source Voltage (Vdss): 60 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Part Status: Active
Supplier Device Package: DFN5060-8
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Power Dissipation (Max): 2W (Ta), 40W (Tc)
Rds On (Max) @ Id, Vgs: 34mOhm @ 15A, 10V
Current - Continuous Drain (Id) @ 25°C: 5.5A (Ta), 25A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-PowerVDFN
Packaging: Cut Tape (CT)
auf Bestellung 2946 Stücke:
Lieferzeit 10-14 Tag (e)
7+3.03 EUR
11+1.92 EUR
100+1.27 EUR
500+1 EUR
1000+0.92 EUR
Mindestbestellmenge: 7 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
PJQ5468A_R2_00001Panjit International Inc.Description: 60V N-CHANNEL ENHANCEMENT MODE M
Input Capacitance (Ciss) (Max) @ Vds: 1173 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 20 nC @ 10 V
Drain to Source Voltage (Vdss): 60 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Part Status: Active
Supplier Device Package: DFN5060-8
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Power Dissipation (Max): 2W (Ta), 40W (Tc)
Rds On (Max) @ Id, Vgs: 34mOhm @ 15A, 10V
Current - Continuous Drain (Id) @ 25°C: 5.5A (Ta), 25A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-PowerVDFN
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar
 Mindestbestellmenge: 3000 Stücke
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PJQ5472A_R2_00001Panjit International Inc.Description: 100V N-CHANNEL ENHANCEMENT MODE
Drain to Source Voltage (Vdss): 100 V
Vgs (Max): ±20V
Input Capacitance (Ciss) (Max) @ Vds: 1413 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 20 nC @ 10 V
Supplier Device Package: DFN5060-8
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Power Dissipation (Max): 2W (Ta), 41W (Tc)
Rds On (Max) @ Id, Vgs: 115mOhm @ 6.5A, 10V
Current - Continuous Drain (Id) @ 25°C: 2.9A (Ta), 13A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-PowerVDFN
Packaging: Tape & Reel (TR)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Produkt ist nicht verfügbar
 Mindestbestellmenge: 3000 Stücke
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PJQ5472A_R2_00001PanjitMOSFET 100V N-Channel Enhancement Mode MOSFET
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PJQ5474A_R2_00001Panjit International Inc.Description: 100V N-CHANNEL ENHANCEMENT MODE
Produkt ist nicht verfügbar
 Mindestbestellmenge: 3000 Stücke
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PJQ5474A_R2_00001Panjit International Inc.Description: 100V N-CHANNEL ENHANCEMENT MODE
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
PJQ5476AL-AU_R2_000A1Panjit International Inc.Description: 100V N-CHANNEL ENHANCEMENT MODE
Qualification: AEC-Q101
Grade: Automotive
Input Capacitance (Ciss) (Max) @ Vds: 1519 pF @ 30 V
Gate Charge (Qg) (Max) @ Vgs: 31 nC @ 10 V
Drain to Source Voltage (Vdss): 100 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Part Status: Active
Supplier Device Package: DFN5060-8
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Power Dissipation (Max): 2W (Ta), 83W (Tc)
Rds On (Max) @ Id, Vgs: 25mOhm @ 20A, 10V
Current - Continuous Drain (Id) @ 25°C: 6.5A (Ta), 42A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-PowerVDFN
Packaging: Cut Tape (CT)
auf Bestellung 3152 Stücke:
Lieferzeit 10-14 Tag (e)
8+2.87 EUR
12+1.81 EUR
100+1.2 EUR
500+0.94 EUR
1000+0.86 EUR
Mindestbestellmenge: 8 Stücke
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PJQ5476AL-AU_R2_000A1Panjit International Inc.Description: 100V N-CHANNEL ENHANCEMENT MODE
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 6.5A (Ta), 42A (Tc)
Rds On (Max) @ Id, Vgs: 25mOhm @ 20A, 10V
Power Dissipation (Max): 2W (Ta), 83W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: DFN5060-8
Grade: Automotive
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 31 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1519 pF @ 30 V
Qualification: AEC-Q101
auf Bestellung 3000 Stücke:
Lieferzeit 10-14 Tag (e)
3000+0.75 EUR
Mindestbestellmenge: 3000 Stücke
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PJQ5476AL_R2_00001Panjit International Inc.Description: 100V N-CHANNEL ENHANCEMENT MODE
Input Capacitance (Ciss) (Max) @ Vds: 1519 pF @ 30 V
Gate Charge (Qg) (Max) @ Vgs: 31 nC @ 10 V
Drain to Source Voltage (Vdss): 100 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Part Status: Active
Supplier Device Package: DFN5060-8
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Power Dissipation (Max): 2W (Ta), 83W (Tc)
Rds On (Max) @ Id, Vgs: 25Ohm @ 20A, 10V
Current - Continuous Drain (Id) @ 25°C: 6.5A (Ta), 42A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-PowerVDFN
Packaging: Cut Tape (CT)
auf Bestellung 239 Stücke:
Lieferzeit 10-14 Tag (e)
8+2.67 EUR
13+1.67 EUR
100+1.11 EUR
Mindestbestellmenge: 8 Stücke
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PJQ5476AL_R2_00001Panjit International Inc.Description: 100V N-CHANNEL ENHANCEMENT MODE
Input Capacitance (Ciss) (Max) @ Vds: 1519 pF @ 30 V
Gate Charge (Qg) (Max) @ Vgs: 31 nC @ 10 V
Drain to Source Voltage (Vdss): 100 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Part Status: Active
Supplier Device Package: DFN5060-8
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Power Dissipation (Max): 2W (Ta), 83W (Tc)
Rds On (Max) @ Id, Vgs: 25Ohm @ 20A, 10V
Current - Continuous Drain (Id) @ 25°C: 6.5A (Ta), 42A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-PowerVDFN
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar
 Mindestbestellmenge: 3000 Stücke
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PJQ54803-AU_R2_002A1PanjitMOSFETs 80V P-Channel Enhancement Mode MOSFET
Produkt ist nicht verfügbar
 Mindestbestellmenge: 3000 Stücke
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PJQ5494_R2_00001Panjit International Inc.Description: 150V N-CHANNEL ENHANCEMENT MODE
Produkt ist nicht verfügbar
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PJQ5494_R2_00001Panjit International Inc.Description: 150V N-CHANNEL ENHANCEMENT MODE
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PJQ5494_R2_00001PanjitMOSFET 150V N-Channel Enhancement Mode MOSFET
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PJQ5518C-AU_R2_002A1PanJit SemiconductorCategory: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 318A; DFN5060X-8
Mounting: SMD
Polarisation: unipolar
Drain current: 318A
Kind of channel: enhancement
Drain-source voltage: 30V
Application: automotive industry
Type of transistor: N-MOSFET
Gate-source voltage: 20V
Kind of package: reel; tape
Case: DFN5060X-8
Produkt ist nicht verfügbar
 Mindestbestellmenge: 30000 Stücke
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PJQ5518S6C-AU_R2_002A1PanJit SemiconductorCategory: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 178A; DFN5060X-8
Mounting: SMD
Polarisation: unipolar
Drain current: 178A
Kind of channel: enhancement
Drain-source voltage: 30V
Application: automotive industry
Type of transistor: N-MOSFET
Gate-source voltage: 20V
Kind of package: reel; tape
Case: DFN5060X-8
Produkt ist nicht verfügbar
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PJQ5524-AU_R2_002A1PanjitMOSFETs 30V N-Channel (LL) SGT MOSFET
auf Bestellung 2980 Stücke:
Lieferzeit 10-14 Tag (e)
2+3.08 EUR
10+1.96 EUR
100+1.3 EUR
500+1.06 EUR
1000+0.96 EUR
3000+0.82 EUR
6000+0.77 EUR
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PJQ5524_R2_00201PanjitMOSFETs 30V N-Channel (LL) SGT MOSFET
auf Bestellung 2996 Stücke:
Lieferzeit 10-14 Tag (e)
2+2.09 EUR
10+1.31 EUR
100+0.87 EUR
500+0.69 EUR
1000+0.63 EUR
3000+0.54 EUR
6000+0.5 EUR
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PJQ5526-AU_R2_002A1PanjitMOSFETs 30V N-Channel (LL) SGT MOSFET
auf Bestellung 3000 Stücke:
Lieferzeit 10-14 Tag (e)
2+2.92 EUR
10+1.86 EUR
100+1.23 EUR
500+0.96 EUR
1000+0.88 EUR
6000+0.74 EUR
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PJQ5526-AU_R2_002A1PanJit SemiconductorCategory: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 73A; DFN5060-8
Mounting: SMD
Case: DFN5060-8
Kind of channel: enhancement
Type of transistor: N-MOSFET
Kind of package: reel; tape
Polarisation: unipolar
Gate-source voltage: 20V
Drain-source voltage: 30V
Drain current: 73A
Application: automotive industry
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
PJQ5526_R2_00201PanjitMOSFETs 30V N-Channel (LL) SGT MOSFET
auf Bestellung 2996 Stücke:
Lieferzeit 10-14 Tag (e)
2+1.96 EUR
10+1.21 EUR
100+0.8 EUR
500+0.61 EUR
1000+0.57 EUR
3000+0.48 EUR
6000+0.44 EUR
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PJQ5526_R2_00201PanJit SemiconductorCategory: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 73A; DFN5060-8
Mounting: SMD
Case: DFN5060-8
Kind of channel: enhancement
Type of transistor: N-MOSFET
Kind of package: reel; tape
Polarisation: unipolar
Gate-source voltage: 20V
Drain-source voltage: 30V
Drain current: 73A
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PJQ5528-AU_R2_002A1PanjitMOSFETs 30V N-Channel Enhancement Mode MOSFET
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PJQ5528_R2_00201Panjit International Inc.Description: 30V N-CHANNEL (LL) SGT MOSFET
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PJQ5528_R2_00201PanJit SemiconductorCategory: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 61A; DFN5060-8
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 61A
Case: DFN5060-8
Gate-source voltage: 20V
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
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PJQ5528_R2_00201PanjitMOSFETs 30V N-Channel (LL) SGT MOSFET
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PJQ5528_R2_00201Panjit International Inc.Description: 30V N-CHANNEL (LL) SGT MOSFET
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PJQ5530-AU_R2_002A1PanjitMOSFETs 30V N-Channel (LL) SGT MOSFET
auf Bestellung 3000 Stücke:
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2+2.43 EUR
10+1.52 EUR
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6000+0.6 EUR
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PJQ5530_R2_00201PanjitMOSFETs 30V N-Channel (LL) SGT MOSFET
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PJQ5534-AU-R2-002A1PanjitArray
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PJQ5534-AU_R2_002A1Panjit International Inc.Description: 30V N-CHANNEL (LL) SGT MOSFET
Packaging: Tape & Reel (TR)
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PJQ5534-AU_R2_002A1Panjit International Inc.Description: 30V N-CHANNEL (LL) SGT MOSFET
Packaging: Cut Tape (CT)
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PJQ5534-AU_R2_002A1PanjitMOSFETs 30V N-Channel (LL) SGT MOSFET
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PJQ5534_R2_00201PanjitMOSFETs 30V N-Channel (LL) SGT MOSFET
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PJQ5540-AU_R2_002A1Panjit International Inc.Description: 40V N-CHANNEL ENHANCEMENT MODE M
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 31A (Ta), 192A (Tc)
Rds On (Max) @ Id, Vgs: 1.88mOhm @ 20A, 10V
Power Dissipation (Max): 3.3W (Ta), 125W (Tc)
Vgs(th) (Max) @ Id: 2.3V @ 50µA
Supplier Device Package: DFN5060X-8L
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 75 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4950 pF @ 25 V
Qualification: AEC-Q101
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PJQ5540-AU_R2_002A1PanjitMOSFETs 40V N-Channel Enhancement Mode MOSFET
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PJQ5540-AU_R2_002A1Panjit International Inc.Description: 40V N-CHANNEL ENHANCEMENT MODE M
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 31A (Ta), 192A (Tc)
Rds On (Max) @ Id, Vgs: 1.88mOhm @ 20A, 10V
Power Dissipation (Max): 3.3W (Ta), 125W (Tc)
Vgs(th) (Max) @ Id: 2.3V @ 50µA
Supplier Device Package: DFN5060X-8L
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 75 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4950 pF @ 25 V
Qualification: AEC-Q101
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PJQ5540V-AU_R2_002A1Panjit International Inc.Description: 40V N-CHANNEL ENHANCEMENT MODE M
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 29.7A (Ta), 174A (Tc)
Rds On (Max) @ Id, Vgs: 2.1mOhm @ 20A, 10V
Power Dissipation (Max): 3.3W (Ta), 115.4W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 50µA
Supplier Device Package: DFN5060X-8L
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 7V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 63 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4690 pF @ 25 V
Qualification: AEC-Q101
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PJQ5540V-AU_R2_002A1Panjit International Inc.Description: 40V N-CHANNEL ENHANCEMENT MODE M
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 29.7A (Ta), 174A (Tc)
Rds On (Max) @ Id, Vgs: 2.1mOhm @ 20A, 10V
Power Dissipation (Max): 3.3W (Ta), 115.4W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 50µA
Supplier Device Package: DFN5060X-8L
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 7V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 63 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4690 pF @ 25 V
Qualification: AEC-Q101
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PJQ5540V-AU_R2_002A1PanjitMOSFETs 40V N-Channel Enhancement Mode MOSFET
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PJQ5542-AU-R2-002A1PanjitMOSFETs DFN5060-8L/MOS/DFN/NFET-40FKMN
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PJQ5542-AU_R2_002A1Panjit International Inc.Description: 40V N-CHANNEL ENHANCEMENT MODE M
Supplier Device Package: DFN5060-8
Mounting Type: Surface Mount
Package / Case: 8-PowerVDFN
Packaging: Cut Tape (CT)
auf Bestellung 3000 Stücke:
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7+3.08 EUR
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PJQ5542-AU_R2_002A1Panjit International Inc.Description: 40V N-CHANNEL ENHANCEMENT MODE M
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Supplier Device Package: DFN5060-8
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PJQ5542-AU_R2_002A1PanjitMOSFETs 40V N-Channel Enhancement Mode MOSFET
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PJQ5542V-AU-R2-002A1PanjitMOSFETs DFN5060-8L/MOS/DFN/NFET-40FKMN
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PJQ5542V-AU_R2_002A1Panjit International Inc.Description: 40V N-CHANNEL ENHANCEMENT MODE M
Qualification: AEC-Q101
Input Capacitance (Ciss) (Max) @ Vds: 3050 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 43 nC @ 10 V
Drain to Source Voltage (Vdss): 40 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 7V, 10V
Grade: Automotive
Supplier Device Package: DFN5060-8
Vgs(th) (Max) @ Id: 3.5V @ 50µA
Power Dissipation (Max): 3.3W (Ta), 100W (Tc)
Rds On (Max) @ Id, Vgs: 3mOhm @ 20A, 10V
Current - Continuous Drain (Id) @ 25°C: 24.8A (Ta), 136A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-PowerVDFN
Packaging: Tape & Reel (TR)
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PJQ5542V-AU_R2_002A1PanjitMOSFETs 40V N-Channel Enhancement Mode MOSFET
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PJQ5542V-AU_R2_002A1Panjit International Inc.Description: 40V N-CHANNEL ENHANCEMENT MODE M
Qualification: AEC-Q101
Input Capacitance (Ciss) (Max) @ Vds: 3050 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 43 nC @ 10 V
Drain to Source Voltage (Vdss): 40 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 7V, 10V
Grade: Automotive
Supplier Device Package: DFN5060-8
Vgs(th) (Max) @ Id: 3.5V @ 50µA
Power Dissipation (Max): 3.3W (Ta), 100W (Tc)
Rds On (Max) @ Id, Vgs: 3mOhm @ 20A, 10V
Current - Continuous Drain (Id) @ 25°C: 24.8A (Ta), 136A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-PowerVDFN
Packaging: Cut Tape (CT)
auf Bestellung 2980 Stücke:
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10+2.71 EUR
100+1.92 EUR
500+1.63 EUR
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PJQ5544-AU-R2-002A1PanjitMOSFETs DFN5060-8L/MOS/DFN/NFET-40FKMN
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PJQ5544-AU_R2_002A1Panjit International Inc.Description: 40V N-CHANNEL ENHANCEMENT MODE M
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 24A (Ta), 130A (Tc)
Rds On (Max) @ Id, Vgs: 3.3mOhm @ 20A, 10V
Power Dissipation (Max): 3.3W (Ta), 100W (Tc)
Vgs(th) (Max) @ Id: 2.3V @ 50µA
Supplier Device Package: DFN5060-8
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 41 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2851 pF @ 25 V
Qualification: AEC-Q101
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