Produkte > AUI
| Bezeichnung | Hersteller | Beschreibung | Verfügbarkeit | Privatkunde | ||||||||||||||
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| AUIRB24427STR | Infineon Technologies | Driver 2-OUT Low Side Inv Automotive 8-Pin SOIC N EP T/R | Produkt ist nicht verfügbar | Mindestbestellmenge: 2500 Stücke Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
| AUIRB24427STR | Infineon / IR | Gate Drivers Dual low-side driver High Current | auf Bestellung 2473 Stücke: Lieferzeit 10-14 Tag (e) |
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| AUIRB24427STR | ROCHESTER ELECTRONICS | Description: ROCHESTER ELECTRONICS - AUIRB24427STR - AUIRB24427S - GATE DRIVER tariffCode: 85423190 productTraceability: No rohsCompliant: YES euEccn: TBC hazardous: false rohsPhthalatesCompliant: TBA usEccn: TBC SVHC: No SVHC (27-Jun-2024) | auf Bestellung 4728 Stücke: Lieferzeit 14-21 Tag (e) |
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| AUIRB24427STR | Infineon Technologies | Description: IC GATE DRVR LOW-SIDE 8SOIC Packaging: Bulk Package / Case: 8-SOIC (0.154", 3.90mm Width) Mounting Type: Surface Mount Operating Temperature: -40°C ~ 150°C (TJ) Voltage - Supply: 5V ~ 20V Input Type: Non-Inverting Supplier Device Package: PG-DSO-8-9 Rise / Fall Time (Typ): 33ns, 33ns (Max) Channel Type: Independent Driven Configuration: Low-Side Number of Drivers: 2 Gate Type: MOSFET (N-Channel) Logic Voltage - VIL, VIH: 0.8V, 2.5V Current - Peak Output (Source, Sink): 6A, 6A DigiKey Programmable: Not Verified | auf Bestellung 6992 Stücke: Lieferzeit 10-14 Tag (e) |
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| AUIRB24427STR (8-Pin SOIC) Produktcode: 163722
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Lieblingsprodukt
| IC > IC Transistoren-Treiber | Produkt ist nicht verfügbar
| Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||
| AUIRB24427STR-IR | International Rectifier | Description: DUAL LOW SIDE DRIVER DigiKey Programmable: Not Verified Part Status: Active Current - Peak Output (Source, Sink): 6A, 6A Logic Voltage - VIL, VIH: 0.8V, 2.5V Gate Type: MOSFET (N-Channel) Number of Drivers: 2 Driven Configuration: Low-Side Channel Type: Independent Rise / Fall Time (Typ): 33ns (Max), 33ns (Max) Supplier Device Package: 8-SOIC Input Type: Non-Inverting Voltage - Supply: 5V ~ 20V Operating Temperature: -40°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 8-SOIC (0.154", 3.90mm Width) Packaging: Bulk | auf Bestellung 811 Stücke: Lieferzeit 10-14 Tag (e) |
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| AUIRF1010EZ | Infineon Technologies | Trans MOSFET N-CH Si 60V 84A Automotive AEC-Q101 3-Pin(3+Tab) TO-220AB Tube | auf Bestellung 2320 Stücke: Lieferzeit 14-21 Tag (e) |
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| AUIRF1010EZ | International Rectifier | Description: AUTOMOTIVE HEXFET N CHANNEL Packaging: Bulk Package / Case: TO-220-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 75A (Tc) Rds On (Max) @ Id, Vgs: 8.5mOhm @ 51A, 10V Power Dissipation (Max): 140W (Tc) Vgs(th) (Max) @ Id: 4V @ 250µA Supplier Device Package: TO-220AB Part Status: Active Drain to Source Voltage (Vdss): 60 V Gate Charge (Qg) (Max) @ Vgs: 86 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 2810 pF @ 25 V Grade: Automotive Qualification: AEC-Q101 | Produkt ist nicht verfügbar | Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
| AUIRF1010EZS | Infineon Technologies | Description: AUIRF1010 - 55V-60V N-CHANNEL AU Packaging: Bulk Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 75A (Tc) Rds On (Max) @ Id, Vgs: 8.5mOhm @ 51A, 10V Power Dissipation (Max): 140W (Tc) Vgs(th) (Max) @ Id: 4V @ 250µA Supplier Device Package: PG-TO263-3 Grade: Automotive Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 60 V Gate Charge (Qg) (Max) @ Vgs: 86 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 2810 pF @ 25 V Qualification: AEC-Q101 | auf Bestellung 34 Stücke: Lieferzeit 10-14 Tag (e) |
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| AUIRF1010EZS | Infineon Technologies | Trans MOSFET N-CH Si 60V 84A Automotive AEC-Q101 3-Pin(2+Tab) D2PAK Tube | auf Bestellung 402 Stücke: Lieferzeit 14-21 Tag (e) |
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| AUIRF1010EZS | Infineon Technologies | Description: MOSFET N-CH 60V 75A D2PAK Packaging: Tube Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 75A (Tc) Rds On (Max) @ Id, Vgs: 8.5mOhm @ 51A, 10V Power Dissipation (Max): 140W (Tc) Vgs(th) (Max) @ Id: 4V @ 250µA Supplier Device Package: PG-TO263-3 Grade: Automotive Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 60 V Gate Charge (Qg) (Max) @ Vgs: 86 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 2810 pF @ 25 V Qualification: AEC-Q101 | Produkt ist nicht verfügbar | Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
| AUIRF1010EZSTRL | Infineon Technologies | Trans MOSFET N-CH Si 60V 84A Automotive 3-Pin(2+Tab) D2PAK T/R | Produkt ist nicht verfügbar | Mindestbestellmenge: 800 Stücke Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
| AUIRF1010EZSTRL | Infineon Technologies | Description: MOSFET N-CH 60V 75A D2PAK Packaging: Tape & Reel (TR) Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 75A (Tc) Rds On (Max) @ Id, Vgs: 8.5mOhm @ 51A, 10V Power Dissipation (Max): 140W (Tc) Vgs(th) (Max) @ Id: 4V @ 250µA Supplier Device Package: PG-TO263-3 Grade: Automotive Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 60 V Gate Charge (Qg) (Max) @ Vgs: 86 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 2810 pF @ 25 V Qualification: AEC-Q101 | Produkt ist nicht verfügbar | Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
| AUIRF1010Z | Infineon / IR | MOSFET AUTO 55V 1 N-CH HEXFET 7.5mOhms | auf Bestellung 59 Stücke: Lieferzeit 10-14 Tag (e) | Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
| AUIRF1010Z | Infineon Technologies | Description: MOSFET N-CH 55V 75A TO220AB Packaging: Tube Package / Case: TO-220-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 75A (Tc) Rds On (Max) @ Id, Vgs: 7.5mOhm @ 75A, 10V Power Dissipation (Max): 140W (Tc) Vgs(th) (Max) @ Id: 4V @ 250µA Supplier Device Package: TO-220AB Grade: Automotive Drain to Source Voltage (Vdss): 55 V Gate Charge (Qg) (Max) @ Vgs: 95 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 2840 pF @ 25 V Qualification: AEC-Q101 | Produkt ist nicht verfügbar | Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
| AUIRF1010Z | INFINEON | Description: INFINEON - AUIRF1010Z - Leistungs-MOSFET, n-Kanal, 55 V, 75 A, 0.0058 ohm, TO-220AB, Durchsteckmontage Transistormontage: Durchsteckmontage Drain-Source-Spannung Vds: 55 Dauer-Drainstrom Id: 75 Qualifikation: AEC-Q101 Verlustleistung Pd: 140 Gate-Source-Schwellenspannung, max.: 2 Verlustleistung: 140 Bauform - Transistor: TO-220AB Qualifizierungsstandard der Automobilindustrie: AEC-Q101 Anzahl der Pins: 3 Produktpalette: - Wandlerpolarität: n-Kanal Kanaltyp: n-Kanal Betriebswiderstand, Rds(on): 0.0058 Rds(on)-Prüfspannung: 10 Betriebstemperatur, max.: 175 Drain-Source-Durchgangswiderstand: 0.0058 SVHC: No SVHC (27-Jun-2018) | Produkt ist nicht verfügbar | Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
| AUIRF1010Z | International Rectifier | Description: MOSFET N-CH 55V 75A TO220AB Packaging: Bulk Package / Case: TO-220-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 75A (Tc) Rds On (Max) @ Id, Vgs: 7.5mOhm @ 75A, 10V Power Dissipation (Max): 140W (Tc) Vgs(th) (Max) @ Id: 4V @ 250µA Supplier Device Package: TO-220AB Grade: Automotive Part Status: Active Drain to Source Voltage (Vdss): 55 V Gate Charge (Qg) (Max) @ Vgs: 95 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 2840 pF @ 25 V Qualification: AEC-Q101 | auf Bestellung 12268 Stücke: Lieferzeit 10-14 Tag (e) |
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| AUIRF1010Z | Infineon Technologies | Trans MOSFET N-CH Si 55V 94A Automotive AEC-Q101 3-Pin(3+Tab) TO-220AB Tube | auf Bestellung 3650 Stücke: Lieferzeit 14-21 Tag (e) |
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| AUIRF1010ZL | INFINEON | Description: INFINEON - AUIRF1010ZL - Leistungs-MOSFET, n-Kanal, 55 V, 75 A, 0.0058 ohm, TO-262, Durchsteckmontage Transistormontage: Durchsteckmontage Drain-Source-Spannung Vds: 55 Dauer-Drainstrom Id: 75 Qualifikation: - Verlustleistung Pd: 140 Gate-Source-Schwellenspannung, max.: 2 Verlustleistung: 140 Bauform - Transistor: TO-262 Anzahl der Pins: 3 Produktpalette: - Wandlerpolarität: n-Kanal Kanaltyp: n-Kanal Betriebswiderstand, Rds(on): 0.0058 Rds(on)-Prüfspannung: 10 Betriebstemperatur, max.: 175 Drain-Source-Durchgangswiderstand: 0.0058 SVHC: No SVHC (27-Jun-2018) | Produkt ist nicht verfügbar | Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
| AUIRF1010ZL | International Rectifier | Description: MOSFET N-CH 55V 75A TO262 Packaging: Bulk Package / Case: TO-262-3 Long Leads, I2PAK, TO-262AA Mounting Type: Through Hole Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 75A (Tc) Rds On (Max) @ Id, Vgs: 7.5mOhm @ 75A, 10V Power Dissipation (Max): 140W (Tc) Vgs(th) (Max) @ Id: 4V @ 250µA Supplier Device Package: TO-262 Grade: Automotive Drain to Source Voltage (Vdss): 55 V Gate Charge (Qg) (Max) @ Vgs: 95 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 2840 pF @ 25 V Qualification: AEC-Q101 | auf Bestellung 8552 Stücke: Lieferzeit 10-14 Tag (e) |
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| AUIRF1010ZL | Infineon Technologies | Trans MOSFET N-CH Si 55V 94A Automotive AEC-Q101 3-Pin(3+Tab) TO-262 Tube | auf Bestellung 5000 Stücke: Lieferzeit 14-21 Tag (e) |
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| AUIRF1010ZL | ROCHESTER ELECTRONICS | Description: ROCHESTER ELECTRONICS - AUIRF1010ZL - AUIRF1010 - 55V-60V N-CHANNEL AUTOMOTIVE tariffCode: 85412900 productTraceability: No rohsCompliant: YES euEccn: NLR hazardous: false rohsPhthalatesCompliant: TBA usEccn: EAR99 SVHC: No SVHC (27-Jun-2024) | auf Bestellung 5000 Stücke: Lieferzeit 14-21 Tag (e) |
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| AUIRF1010ZL | Infineon / IR | MOSFET AUTO 55V 1 N-CH HEXFET 7.5mOhms | auf Bestellung 362 Stücke: Lieferzeit 10-14 Tag (e) | Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
| AUIRF1010ZL | Infineon Technologies | Description: AUIRF1010 - 55V-60V N-CHANNEL AU Packaging: Bulk Package / Case: TO-262-3 Long Leads, I2PAK, TO-262AA Mounting Type: Through Hole Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 75A (Tc) Rds On (Max) @ Id, Vgs: 7.5mOhm @ 75A, 10V Power Dissipation (Max): 140W (Tc) Vgs(th) (Max) @ Id: 4V @ 250µA Supplier Device Package: TO-262 Grade: Automotive Drain to Source Voltage (Vdss): 55 V Gate Charge (Qg) (Max) @ Vgs: 95 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 2840 pF @ 25 V Qualification: AEC-Q101 | auf Bestellung 5000 Stücke: Lieferzeit 10-14 Tag (e) |
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| AUIRF1010ZL | Infineon Technologies | Trans MOSFET N-CH Si 55V 94A Automotive AEC-Q101 3-Pin(3+Tab) TO-262 Tube | auf Bestellung 362 Stücke: Lieferzeit 14-21 Tag (e) |
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| AUIRF1010ZS | Infineon Technologies | MOSFET AUTO 55V 1 N-CH HEXFET 7.5mOhms | Produkt ist nicht verfügbar | Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
| AUIRF1010ZS | Infineon Technologies | Description: MOSFET N-CH 55V 75A D2PAK Packaging: Tube Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 75A (Tc) Rds On (Max) @ Id, Vgs: 7.5mOhm @ 75A, 10V Power Dissipation (Max): 140W (Tc) Vgs(th) (Max) @ Id: 4V @ 250µA Supplier Device Package: PG-TO263-3 Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 55 V Gate Charge (Qg) (Max) @ Vgs: 95 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 2840 pF @ 25 V Grade: Automotive Qualification: AEC-Q101 | Produkt ist nicht verfügbar | Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
| AUIRF1010ZSTRL | INFINEON TECHNOLOGIES | Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 55V; 94A; 140W; D2PAK Type of transistor: N-MOSFET Technology: HEXFET® Polarisation: unipolar Drain-source voltage: 55V Drain current: 94A Power dissipation: 140W Case: D2PAK Mounting: SMD Kind of package: reel Kind of channel: enhancement | Produkt ist nicht verfügbar | Mindestbestellmenge: 800 Stücke Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
| AUIRF1010ZSTRL | Infineon Technologies | Description: MOSFET N-CH 55V 75A D2PAK Packaging: Tape & Reel (TR) Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 75A (Tc) Rds On (Max) @ Id, Vgs: 7.5mOhm @ 75A, 10V Power Dissipation (Max): 140W (Tc) Vgs(th) (Max) @ Id: 4V @ 250µA Supplier Device Package: PG-TO263-3 Grade: Automotive Part Status: Not For New Designs Drain to Source Voltage (Vdss): 55 V Gate Charge (Qg) (Max) @ Vgs: 95 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 2840 pF @ 25 V Qualification: AEC-Q101 | Produkt ist nicht verfügbar | Mindestbestellmenge: 800 Stücke Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
| AUIRF1010ZSTRL | Infineon Technologies | Trans MOSFET N-CH Si 55V 94A Automotive AEC-Q101 3-Pin(2+Tab) D2PAK T/R | Produkt ist nicht verfügbar | Mindestbestellmenge: 800 Stücke Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
| AUIRF1010ZSTRL | Infineon Technologies | MOSFETs AUTO 55V 1 N-CH HEXFET 7.5mOhms | auf Bestellung 768 Stücke: Lieferzeit 10-14 Tag (e) |
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| AUIRF1010ZSTRR | Infineon / IR | MOSFET AUTO 55V 1 N-CH HEXFET 7.5mOhms | Produkt ist nicht verfügbar | Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
| AUIRF1018E | Infineon Technologies | Description: MOSFET N-CH 60V 79A TO220AB Packaging: Tube Package / Case: TO-220-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 79A (Tc) Rds On (Max) @ Id, Vgs: 8.4mOhm @ 47A, 10V Power Dissipation (Max): 110W (Tc) Vgs(th) (Max) @ Id: 4V @ 100µA Supplier Device Package: TO-220AB Grade: Automotive Part Status: Not For New Designs Drain to Source Voltage (Vdss): 60 V Gate Charge (Qg) (Max) @ Vgs: 69 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 2290 pF @ 50 V Qualification: AEC-Q101 | Produkt ist nicht verfügbar | Mindestbestellmenge: 1000 Stücke Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
| AUIRF1018E | Infineon / IR | MOSFET 60V 79A 8.4 mOhm Automotive MOSFET | auf Bestellung 333 Stücke: Lieferzeit 10-14 Tag (e) | Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
| AUIRF1018ES | Infineon Technologies | Description: MOSFET N-CH 60V 79A D2PAK Packaging: Tube Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 79A (Tc) Rds On (Max) @ Id, Vgs: 8.4mOhm @ 47A, 10V Power Dissipation (Max): 110W (Tc) Vgs(th) (Max) @ Id: 4V @ 100µA Supplier Device Package: D2PAK Grade: Automotive Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 60 V Gate Charge (Qg) (Max) @ Vgs: 69 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 2290 pF @ 50 V Qualification: AEC-Q101 | Produkt ist nicht verfügbar | Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
| AUIRF1018ES | Infineon / IR | MOSFET 60V 79A 8.4 mOhm Automotive MOSFET | auf Bestellung 2053 Stücke: Lieferzeit 10-14 Tag (e) | Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
| AUIRF1018ES | International Rectifier | Description: AUTOMOTIVE HEXFET N CHANNEL Packaging: Bulk Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 79A (Tc) Rds On (Max) @ Id, Vgs: 8.4mOhm @ 47A, 10V Power Dissipation (Max): 110W (Tc) Vgs(th) (Max) @ Id: 4V @ 100µA Supplier Device Package: D2PAK Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 60 V Gate Charge (Qg) (Max) @ Vgs: 69 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 2290 pF @ 50 V Grade: Automotive Qualification: AEC-Q101 | auf Bestellung 12661 Stücke: Lieferzeit 10-14 Tag (e) |
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| AUIRF1018ESTRL | Infineon Technologies | MOSFET 60V 79A 8.4 mOhm Automotive MOSFET | Produkt ist nicht verfügbar | Mindestbestellmenge: 800 Stücke Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
| AUIRF1018ESTRR | Infineon / IR | MOSFET 60V 79A 8.4 mOhm Automotive MOSFET | Produkt ist nicht verfügbar | Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
| AUIRF1324 | ROCHESTER ELECTRONICS | Description: ROCHESTER ELECTRONICS - AUIRF1324 - AUIRF1324 - 20V-40V N-CHANNEL AUTOMOTIVE tariffCode: 85412900 productTraceability: No rohsCompliant: YES euEccn: NLR hazardous: false rohsPhthalatesCompliant: TBA usEccn: EAR99 SVHC: No SVHC (27-Jun-2024) | auf Bestellung 502 Stücke: Lieferzeit 14-21 Tag (e) |
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| AUIRF1324 | Infineon Technologies | MOSFET AUTO 24V 1 N-CH HEXFET 1.5mOhms | auf Bestellung 513 Stücke: Lieferzeit 10-14 Tag (e) |
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| AUIRF1324 | Infineon Technologies | Description: MOSFET N-CH 24V 195A TO220AB Packaging: Bulk Package / Case: TO-220-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 195A (Tc) Rds On (Max) @ Id, Vgs: 1.5mOhm @ 195A, 10V Power Dissipation (Max): 300W (Tc) Vgs(th) (Max) @ Id: 4V @ 250µA Supplier Device Package: TO-220AB Grade: Automotive Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 24 V Gate Charge (Qg) (Max) @ Vgs: 240 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 7590 pF @ 24 V Qualification: AEC-Q101 | auf Bestellung 7842 Stücke: Lieferzeit 10-14 Tag (e) |
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| AUIRF1324 | Infineon Technologies | Description: MOSFET N-CH 24V 195A TO220AB Drain to Source Voltage (Vdss): 24 V Vgs (Max): ±20V Drive Voltage (Max Rds On, Min Rds On): 10V Part Status: Obsolete Supplier Device Package: TO-220AB Vgs(th) (Max) @ Id: 4V @ 250µA Power Dissipation (Max): 300W (Tc) Rds On (Max) @ Id, Vgs: 1.5mOhm @ 195A, 10V Current - Continuous Drain (Id) @ 25°C: 195A (Tc) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Through Hole Package / Case: TO-220-3 Packaging: Tube Qualification: AEC-Q101 Grade: Automotive Input Capacitance (Ciss) (Max) @ Vds: 7590 pF @ 24 V Gate Charge (Qg) (Max) @ Vgs: 240 nC @ 10 V | Produkt ist nicht verfügbar | Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
| AUIRF1324S | Infineon Technologies | Description: MOSFET N-CH 24V 195A D2PAK Packaging: Tube Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 195A (Tc) Rds On (Max) @ Id, Vgs: 1.65mOhm @ 195A, 10V Power Dissipation (Max): 300W (Tc) Vgs(th) (Max) @ Id: 4V @ 250µA Supplier Device Package: D2PAK Grade: Automotive Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 24 V Gate Charge (Qg) (Max) @ Vgs: 240 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 7590 pF @ 24 V Qualification: AEC-Q101 | Produkt ist nicht verfügbar | Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
| AUIRF1324S | International Rectifier | Description: MOSFET N-CH 24V 195A D2PAK Packaging: Bulk Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 195A (Tc) Rds On (Max) @ Id, Vgs: 1.65mOhm @ 195A, 10V Power Dissipation (Max): 300W (Tc) Vgs(th) (Max) @ Id: 4V @ 250µA Supplier Device Package: D2PAK Grade: Automotive Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 24 V Gate Charge (Qg) (Max) @ Vgs: 240 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 7590 pF @ 24 V Qualification: AEC-Q101 | auf Bestellung 4255 Stücke: Lieferzeit 10-14 Tag (e) |
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| AUIRF1324S | Infineon Technologies | MOSFET AUTO 24V 1 N-CH HEXFET 1.5mOhms | Produkt ist nicht verfügbar | Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
| AUIRF1324S-7P | Infineon Technologies | Trans MOSFET N-CH Si 24V 429A Automotive 7-Pin(6+Tab) D2PAK Tube | Produkt ist nicht verfügbar | Mindestbestellmenge: 1000 Stücke Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
| AUIRF1324S-7P | Infineon Technologies | Description: MOSFET N-CH 24V 240A D2PAK Packaging: Tube Package / Case: TO-263-7, D2PAK (6 Leads + Tab) Mounting Type: Surface Mount Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 240A (Tc) Rds On (Max) @ Id, Vgs: 1mOhm @ 160A, 10V Vgs(th) (Max) @ Id: 4V @ 250µA Supplier Device Package: D2PAK (7-Lead) Part Status: Obsolete Drain to Source Voltage (Vdss): 24 V Gate Charge (Qg) (Max) @ Vgs: 252 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 7700 pF @ 19 V Grade: Automotive Qualification: AEC-Q101 | Produkt ist nicht verfügbar | Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
| AUIRF1324S-7P | ROCHESTER ELECTRONICS | Description: ROCHESTER ELECTRONICS - AUIRF1324S-7P - AUIRF1324 - 20V-40V N-CHANNEL AUTOMOTIVE tariffCode: 85412900 productTraceability: No rohsCompliant: YES euEccn: NLR hazardous: false rohsPhthalatesCompliant: TBA usEccn: EAR99 SVHC: No SVHC (27-Jun-2024) | auf Bestellung 12681 Stücke: Lieferzeit 14-21 Tag (e) |
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| AUIRF1324S-7P-IR | International Rectifier | Description: MOSFET N-CH 24V 240A TO263-7 Packaging: Bulk Package / Case: TO-263-7, D²Pak (6 Leads + Tab) Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 240A (Tc) Rds On (Max) @ Id, Vgs: 1mOhm @ 160A, 10V Power Dissipation (Max): 300W (Tc) Vgs(th) (Max) @ Id: 4V @ 250µA Supplier Device Package: PG-TO263-7 Part Status: Active Vgs (Max): ±20V Drain to Source Voltage (Vdss): 24 V Gate Charge (Qg) (Max) @ Vgs: 252 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 7700 pF @ 19 V | Produkt ist nicht verfügbar | Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
| AUIRF1324STRL | Infineon Technologies | Trans MOSFET N-CH Si 24V 340A Automotive 3-Pin(2+Tab) D2PAK T/R | Produkt ist nicht verfügbar | Mindestbestellmenge: 800 Stücke Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
| AUIRF1324STRL | Infineon Technologies | Description: AUIRF1324 - 20V-40V N-CHANNEL AU Packaging: Bulk Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 195A (Tc) Rds On (Max) @ Id, Vgs: 1.65mOhm @ 195A, 10V Power Dissipation (Max): 300W (Tc) Vgs(th) (Max) @ Id: 4V @ 250µA Supplier Device Package: D2PAK Grade: Automotive Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 24 V Gate Charge (Qg) (Max) @ Vgs: 240 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 7590 pF @ 24 V Qualification: AEC-Q101 | auf Bestellung 316 Stücke: Lieferzeit 10-14 Tag (e) |
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| AUIRF1324STRL | Infineon Technologies | MOSFET AUTO 24V 1 N-CH HEXFET 1.5mOhms | Produkt ist nicht verfügbar | Mindestbestellmenge: 800 Stücke Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
| AUIRF1324STRL | Infineon Technologies | Description: MOSFET N-CH 24V 195A D2PAK Packaging: Tape & Reel (TR) Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 195A (Tc) Rds On (Max) @ Id, Vgs: 1.65mOhm @ 195A, 10V Power Dissipation (Max): 300W (Tc) Vgs(th) (Max) @ Id: 4V @ 250µA Supplier Device Package: D2PAK Grade: Automotive Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 24 V Gate Charge (Qg) (Max) @ Vgs: 240 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 7590 pF @ 24 V Qualification: AEC-Q101 | Produkt ist nicht verfügbar | Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
| AUIRF1324STRL | Infineon Technologies | Trans MOSFET N-CH Si 24V 340A Automotive 3-Pin(2+Tab) D2PAK T/R | Produkt ist nicht verfügbar | Mindestbestellmenge: 800 Stücke Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
| AUIRF1324STRL | International Rectifier | Description: MOSFET N-CH 24V 195A D2PAK Packaging: Bulk Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 195A (Tc) Rds On (Max) @ Id, Vgs: 1.65mOhm @ 195A, 10V Power Dissipation (Max): 300W (Tc) Vgs(th) (Max) @ Id: 4V @ 250µA Supplier Device Package: D2PAK Grade: Automotive Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 24 V Gate Charge (Qg) (Max) @ Vgs: 240 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 7590 pF @ 24 V Qualification: AEC-Q101 | auf Bestellung 14876 Stücke: Lieferzeit 10-14 Tag (e) |
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| AUIRF1324STRL7P | Infineon / IR | MOSFET MOSFET_(20V 40V) | auf Bestellung 800 Stücke: Lieferzeit 10-14 Tag (e) | Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
| AUIRF1324STRL7P | International Rectifier | Description: MOSFET N-CH 24V 340A D2PAK Packaging: Bulk Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 340A (Tc) Rds On (Max) @ Id, Vgs: 1.65mOhm @ 195A, 10V Power Dissipation (Max): 300W (Tc) Vgs(th) (Max) @ Id: 4V @ 250µA Supplier Device Package: PG-TO263-3 Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 24 V Gate Charge (Qg) (Max) @ Vgs: 240 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 7590 pF @ 24 V Grade: Automotive Qualification: AEC-Q101 | auf Bestellung 401 Stücke: Lieferzeit 10-14 Tag (e) |
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| AUIRF1324STRL7P | Infineon Technologies | Description: MOSFET N-CH 24V 340A D2PAK Packaging: Tape & Reel (TR) Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 340A (Tc) Rds On (Max) @ Id, Vgs: 1.65mOhm @ 195A, 10V Power Dissipation (Max): 300W (Tc) Vgs(th) (Max) @ Id: 4V @ 250µA Supplier Device Package: PG-TO263-3 Grade: Automotive Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 24 V Gate Charge (Qg) (Max) @ Vgs: 240 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 7590 pF @ 24 V Qualification: AEC-Q101 | Produkt ist nicht verfügbar | Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
| AUIRF1324STRR | Infineon / IR | MOSFET AUTO 24V 1 N-CH HEXFET 1.5mOhms | Produkt ist nicht verfügbar | Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
| AUIRF1324WL | Infineon Technologies | MOSFETs AUTO 24V 1 N-CH HEXFET 1.3mOhms | auf Bestellung 5998 Stücke: Lieferzeit 10-14 Tag (e) |
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| AUIRF1324WL | Infineon Technologies | Description: MOSFET N-CH 24V 240A TO262-3 Packaging: Tube Package / Case: TO-262-3 Wide Leads Mounting Type: Through Hole Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 240A (Tc) Rds On (Max) @ Id, Vgs: 1.3mOhm @ 195A, 10V Power Dissipation (Max): 300W (Tc) Vgs(th) (Max) @ Id: 4V @ 250µA Supplier Device Package: TO-262-3 Wide Grade: Automotive Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 24 V Gate Charge (Qg) (Max) @ Vgs: 180 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 7630 pF @ 19 V Qualification: AEC-Q101 | Produkt ist nicht verfügbar | Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
| AUIRF1324WL | INFINEON | Description: INFINEON - AUIRF1324WL - Leistungs-MOSFET, n-Kanal, 24 V, 240 A, 1300 µohm, TO-262, Durchsteckmontage tariffCode: 85412900 Transistormontage: Durchsteckmontage euEccn: NLR Drain-Source-Spannung Vds: 24V rohsCompliant: YES Dauer-Drainstrom Id: 240A hazardous: false rohsPhthalatesCompliant: YES Qualifikation: AEC-Q101 isCanonical: Y MSL: MSL 1 - unbegrenzt Gate-Source-Schwellenspannung, max.: 2V Verlustleistung: 300W SVHC: No SVHC (25-Jun-2025) Bauform - Transistor: TO-262 Anzahl der Pins: 3Pin(s) Produktpalette: - productTraceability: Yes-Date/Lot Code usEccn: EAR99 Kanaltyp: n-Kanal Betriebstemperatur, max.: 175°C Rds(on)-Prüfspannung: 10V Drain-Source-Durchgangswiderstand: 1300µohm | auf Bestellung 1979 Stücke: Lieferzeit 14-21 Tag (e) |
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| AUIRF1324WL | Infineon Technologies | Trans MOSFET N-CH Si 24V 382A Automotive 3-Pin(3+Tab) TO-262 Tube | Produkt ist nicht verfügbar | Mindestbestellmenge: 1000 Stücke Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
| AUIRF1324WL | Infineon Technologies | Trans MOSFET N-CH Si 24V 382A Automotive 3-Pin(3+Tab) TO-262 Tube | Produkt ist nicht verfügbar | Mindestbestellmenge: 1000 Stücke Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
| AUIRF1404 | International Rectifier HiRel Products | Trans MOSFET N-CH Si 40V 202A Automotive AEC-Q101 3-Pin(3+Tab) TO-220AB Tube | auf Bestellung 344 Stücke: Lieferzeit 14-21 Tag (e) |
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| AUIRF1404 | Infineon Technologies | Description: MOSFET N-CH 40V 160A TO220AB | Produkt ist nicht verfügbar | Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
| AUIRF1404 | Infineon Technologies | Trans MOSFET N-CH Si 40V 202A 3-Pin(3+Tab) TO-220AB Tube Automotive AEC-Q101 | auf Bestellung 1000 Stücke: Lieferzeit 14-21 Tag (e) |
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| AUIRF1404 | International Rectifier | MOSFET N-CH 40V 202A Automotive AUIRF1404 International Rectifier TAUIRF1404 Anzahl je Verpackung: 10 Stücke | auf Bestellung 8 Stücke: Lieferzeit 7-14 Tag (e) |
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| AUIRF1404 | Infineon Technologies | Trans MOSFET N-CH Si 40V 202A 3-Pin(3+Tab) TO-220AB Tube Automotive AEC-Q101 | auf Bestellung 1776 Stücke: Lieferzeit 14-21 Tag (e) |
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| AUIRF1404 | International Rectifier HiRel Products | Trans MOSFET N-CH Si 40V 202A Automotive AEC-Q101 3-Pin(3+Tab) TO-220AB Tube | auf Bestellung 1000 Stücke: Lieferzeit 14-21 Tag (e) |
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| AUIRF1404 | International Rectifier | Description: AUIRF1404 - 20V-40V N-CHANNEL AU Packaging: Bulk Package / Case: TO-220-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 160A (Tc) Rds On (Max) @ Id, Vgs: 4mOhm @ 121A, 10V Power Dissipation (Max): 333W (Tc) Vgs(th) (Max) @ Id: 4V @ 250µA Supplier Device Package: TO-220AB Grade: Automotive Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 40 V Gate Charge (Qg) (Max) @ Vgs: 196 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 5669 pF @ 25 V Qualification: AEC-Q101 | auf Bestellung 25309 Stücke: Lieferzeit 10-14 Tag (e) |
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| AUIRF1404 | INFINEON | Description: INFINEON - AUIRF1404 - Leistungs-MOSFET, n-Kanal, 40 V, 160 A, 0.0035 ohm, TO-220AB, Durchsteckmontage tariffCode: 85412900 Transistormontage: Durchsteckmontage Drain-Source-Spannung Vds: 40V rohsCompliant: YES Dauer-Drainstrom Id: 160A hazardous: false rohsPhthalatesCompliant: YES Qualifikation: AEC-Q101 usEccn: EAR99 Gate-Source-Schwellenspannung, max.: 2V euEccn: NLR Verlustleistung: 333W Bauform - Transistor: TO-220AB Anzahl der Pins: 3Pin(s) Produktpalette: - productTraceability: No Kanaltyp: n-Kanal Rds(on)-Prüfspannung: 10V Betriebstemperatur, max.: 175°C Drain-Source-Durchgangswiderstand: 0.0035ohm | auf Bestellung 952 Stücke: Lieferzeit 14-21 Tag (e) |
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| AUIRF1404 | International Rectifier HiRel Products | Trans MOSFET N-CH Si 40V 202A Automotive AEC-Q101 3-Pin(3+Tab) TO-220AB Tube | auf Bestellung 22206 Stücke: Lieferzeit 14-21 Tag (e) |
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| AUIRF1404 | Infineon Technologies | Trans MOSFET N-CH Si 40V 202A 3-Pin(3+Tab) TO-220AB Tube Automotive AEC-Q101 | auf Bestellung 16650 Stücke: Lieferzeit 14-21 Tag (e) |
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| AUIRF1404 | Infineon Technologies | Trans MOSFET N-CH Si 40V 202A 3-Pin(3+Tab) TO-220AB Tube Automotive AEC-Q101 | auf Bestellung 759 Stücke: Lieferzeit 14-21 Tag (e) |
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| AUIRF1404 | Infineon Technologies | MOSFETs AUTO 40V 1 N-CH HEXFET 4mOhms | Produkt ist nicht verfügbar | Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
| AUIRF1404 | Infineon Technologies | Description: AUIRF1404 - 20V-40V N-CHANNEL AU Packaging: Bulk Package / Case: TO-220-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 160A (Tc) Rds On (Max) @ Id, Vgs: 4mOhm @ 121A, 10V Power Dissipation (Max): 333W (Tc) Vgs(th) (Max) @ Id: 4V @ 250µA Supplier Device Package: TO-220AB Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 40 V Gate Charge (Qg) (Max) @ Vgs: 196 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 5669 pF @ 25 V Grade: Automotive Qualification: AEC-Q101 | auf Bestellung 16597 Stücke: Lieferzeit 10-14 Tag (e) |
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| AUIRF1404 | ROCHESTER ELECTRONICS | Description: ROCHESTER ELECTRONICS - AUIRF1404 - AUIRF1404 - 20V-40V N-CHANNEL AUTOMOTIVE tariffCode: 85412900 productTraceability: No rohsCompliant: YES euEccn: NLR hazardous: false rohsPhthalatesCompliant: TBA usEccn: EAR99 SVHC: No SVHC (27-Jun-2024) | auf Bestellung 16597 Stücke: Lieferzeit 14-21 Tag (e) |
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| AUIRF1404S | International Rectifier HiRel Products | Trans MOSFET N-CH Si 40V 162A Automotive AEC-Q101 3-Pin(2+Tab) D2PAK Tube | auf Bestellung 20524 Stücke: Lieferzeit 14-21 Tag (e) |
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| AUIRF1404S | Infineon Technologies | Trans MOSFET N-CH Si 40V 162A 3-Pin(2+Tab) D2PAK Tube Automotive AEC-Q101 | auf Bestellung 14000 Stücke: Lieferzeit 14-21 Tag (e) |
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| AUIRF1404S | Infineon Technologies | Description: MOSFET N-CH 40V 75A D2PAK | Produkt ist nicht verfügbar | Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
| AUIRF1404S | International Rectifier HiRel Products | Trans MOSFET N-CH Si 40V 162A Automotive AEC-Q101 3-Pin(2+Tab) D2PAK Tube | auf Bestellung 3300 Stücke: Lieferzeit 14-21 Tag (e) |
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| AUIRF1404S | Infineon Technologies | MOSFETs AUTO 40V 1 N-CH HEXFET 4mOhms | auf Bestellung 2987 Stücke: Lieferzeit 10-14 Tag (e) |
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| AUIRF1404S | International Rectifier | Description: MOSFET N-CH 40V 75A D2PAK Packaging: Bulk Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 75A (Tc) Rds On (Max) @ Id, Vgs: 4mOhm @ 95A, 10V Power Dissipation (Max): 3.8W (Ta), 200W (Tc) Vgs(th) (Max) @ Id: 4V @ 250µA Supplier Device Package: D2PAK Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 40 V Gate Charge (Qg) (Max) @ Vgs: 200 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 7360 pF @ 25 V Grade: Automotive Qualification: AEC-Q101 | auf Bestellung 25431 Stücke: Lieferzeit 10-14 Tag (e) |
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| AUIRF1404S | International Rectifier | MOSFET N-CH 40V 202A D2PAK Транзистори | Produkt ist nicht verfügbar | Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
| AUIRF1404S | International Rectifier HiRel Products | Trans MOSFET N-CH Si 40V 162A Automotive AEC-Q101 3-Pin(2+Tab) D2PAK Tube | auf Bestellung 1607 Stücke: Lieferzeit 14-21 Tag (e) |
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| AUIRF1404STRL | Infineon Technologies | Trans MOSFET N-CH Si 40V 162A 3-Pin(2+Tab) D2PAK T/R Automotive AEC-Q101 | auf Bestellung 8800 Stücke: Lieferzeit 14-21 Tag (e) |
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| AUIRF1404STRL | Infineon Technologies | Description: MOSFET N-CH 40V 75A D2PAK | Produkt ist nicht verfügbar | Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
| AUIRF1404STRL | Infineon Technologies | Trans MOSFET N-CH Si 40V 162A 3-Pin(2+Tab) D2PAK T/R Automotive AEC-Q101 | auf Bestellung 800 Stücke: Lieferzeit 14-21 Tag (e) |
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| AUIRF1404STRL | Infineon Technologies | Description: MOSFET_(20V,40V) Packaging: Bulk Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 75A (Tc) Rds On (Max) @ Id, Vgs: 4mOhm @ 95A, 10V Power Dissipation (Max): 3.8W (Ta), 200W (Tc) Vgs(th) (Max) @ Id: 4V @ 250µA Supplier Device Package: D2PAK Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 40 V Gate Charge (Qg) (Max) @ Vgs: 200 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 7360 pF @ 25 V Grade: Automotive Qualification: AEC-Q101 | auf Bestellung 800 Stücke: Lieferzeit 10-14 Tag (e) |
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| AUIRF1404STRL | INFINEON TECHNOLOGIES | Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 40V; 162A; 200W; D2PAK Type of transistor: N-MOSFET Technology: HEXFET® Polarisation: unipolar Drain-source voltage: 40V Drain current: 162A Power dissipation: 200W Case: D2PAK Mounting: SMD Kind of package: reel Kind of channel: enhancement | Produkt ist nicht verfügbar | Mindestbestellmenge: 800 Stücke Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
| AUIRF1404XKMA1 | Infineon Technologies | Description: MOSFET Packaging: Bulk Part Status: Obsolete | Produkt ist nicht verfügbar | Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
| AUIRF1404Z | Infineon Technologies | Trans MOSFET N-CH Si 40V 180A 3-Pin(3+Tab) TO-220AB Tube Automotive AEC-Q101 | auf Bestellung 1046 Stücke: Lieferzeit 14-21 Tag (e) |
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| AUIRF1404Z | Infineon Technologies | MOSFETs AUTO 40V 1 N-CH HEXFET 3.7mOhms | auf Bestellung 697 Stücke: Lieferzeit 10-14 Tag (e) |
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| AUIRF1404Z | INFINEON | Description: INFINEON - AUIRF1404Z - Leistungs-MOSFET, n-Kanal, 40 V, 160 A, 3700 µohm, TO-220AB, Durchsteckmontage tariffCode: 85412900 Transistormontage: Durchsteckmontage euEccn: NLR Drain-Source-Spannung Vds: 40V rohsCompliant: YES Dauer-Drainstrom Id: 160A hazardous: false rohsPhthalatesCompliant: YES Qualifikation: AEC-Q101 isCanonical: Y MSL: - Gate-Source-Schwellenspannung, max.: 2V Verlustleistung: 200W SVHC: No SVHC (23-Jan-2024) Bauform - Transistor: TO-220AB Anzahl der Pins: 3Pin(s) Produktpalette: - productTraceability: Yes-Date/Lot Code usEccn: EAR99 Kanaltyp: n-Kanal Betriebstemperatur, max.: 175°C Rds(on)-Prüfspannung: 10V Drain-Source-Durchgangswiderstand: 3700µohm | auf Bestellung 937 Stücke: Lieferzeit 14-21 Tag (e) |
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| AUIRF1404Z | Infineon Technologies | Trans MOSFET N-CH Si 40V 180A 3-Pin(3+Tab) TO-220AB Tube Automotive AEC-Q101 | auf Bestellung 680 Stücke: Lieferzeit 14-21 Tag (e) |
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| AUIRF1404Z | Infineon Technologies | Description: MOSFET N-CH 40V 160A TO220AB Packaging: Tube Package / Case: TO-220-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 160A (Tc) Rds On (Max) @ Id, Vgs: 3.7mOhm @ 75A, 10V Power Dissipation (Max): 200W (Tc) Vgs(th) (Max) @ Id: 4V @ 250µA Supplier Device Package: TO-220AB Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 40 V Gate Charge (Qg) (Max) @ Vgs: 150 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 4340 pF @ 25 V Grade: Automotive Qualification: AEC-Q101 | Produkt ist nicht verfügbar | Mindestbestellmenge: 1000 Stücke Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
| AUIRF1404Z Produktcode: 177419
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| Transistoren > MOSFET N-CH | Produkt ist nicht verfügbar
| Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||
| AUIRF1404Z | Infineon Technologies | Trans MOSFET N-CH Si 40V 180A 3-Pin(3+Tab) TO-220AB Tube Automotive AEC-Q101 | auf Bestellung 99 Stücke: Lieferzeit 14-21 Tag (e) |
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