Produkte > NSB
| Bezeichnung | Hersteller | Beschreibung | Verfügbarkeit | Privatkunde | ||||||||||||||||||
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| NSBC113EPDXV6T1G | onsemi | Digital Transistors 50V Dual Bipolar Digital Transistor | auf Bestellung 7779 Stücke: Lieferzeit 10-14 Tag (e) |
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| NSBC113EPDXV6T1G | onsemi | Description: TRANS PREBIAS NPN/PNP SOT563 Qualification: AEC-Q101 Grade: Automotive Supplier Device Package: SOT-563 Resistor - Emitter Base (R2): 1kOhm Resistor - Base (R1): 1kOhm DC Current Gain (hFE) (Min) @ Ic, Vce: 3 @ 5mA, 10V Current - Collector Cutoff (Max): 500nA Vce Saturation (Max) @ Ib, Ic: 250mV @ 5mA, 10mA Voltage - Collector Emitter Breakdown (Max): 50V Current - Collector (Ic) (Max): 100mA Power - Max: 500mW Transistor Type: 1 NPN, 1 PNP - Pre-Biased (Dual) Mounting Type: Surface Mount Package / Case: SOT-563, SOT-666 Packaging: Tape & Reel (TR) | auf Bestellung 112000 Stücke: Lieferzeit 10-14 Tag (e) |
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| NSBC113EPDXV6T1G | ONSEMI | Description: ONSEMI - NSBC113EPDXV6T1G - BIPOLAR JUNCTION TRANSISTOR ARRAYS - BJT tariffCode: 85412900 productTraceability: No rohsCompliant: YES euEccn: NLR hazardous: false rohsPhthalatesCompliant: YES usEccn: EAR99 SVHC: No SVHC (23-Jan-2024) | auf Bestellung 192000 Stücke: Lieferzeit 14-21 Tag (e) |
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| NSBC113EPDXV6T1G | onsemi | Description: TRANS PREBIAS NPN/PNP SOT563 Packaging: Cut Tape (CT) Package / Case: SOT-563, SOT-666 Mounting Type: Surface Mount Transistor Type: 1 NPN, 1 PNP - Pre-Biased (Dual) Power - Max: 500mW Current - Collector (Ic) (Max): 100mA Voltage - Collector Emitter Breakdown (Max): 50V Vce Saturation (Max) @ Ib, Ic: 250mV @ 5mA, 10mA Current - Collector Cutoff (Max): 500nA DC Current Gain (hFE) (Min) @ Ic, Vce: 3 @ 5mA, 10V Resistor - Base (R1): 1kOhm Resistor - Emitter Base (R2): 1kOhm Supplier Device Package: SOT-563 Grade: Automotive Qualification: AEC-Q101 | auf Bestellung 108000 Stücke: Lieferzeit 10-14 Tag (e) |
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| NSBC114BDXV6T1 | auf Bestellung 221 Stücke: Lieferzeit 21-28 Tag (e) | Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||||||||
| NSBC114EDP6T5G | onsemi | Description: TRANS PREBIAS 2NPN 50V SOT-963 Packaging: Tape & Reel (TR) Package / Case: SOT-963 Mounting Type: Surface Mount Transistor Type: 2 NPN - Pre-Biased (Dual) Power - Max: 408mW Current - Collector (Ic) (Max): 100mA Voltage - Collector Emitter Breakdown (Max): 50V Vce Saturation (Max) @ Ib, Ic: 250mV @ 300µA, 10mA Current - Collector Cutoff (Max): 500nA DC Current Gain (hFE) (Min) @ Ic, Vce: 35 @ 5mA, 10V Resistor - Base (R1): 10kOhms Resistor - Emitter Base (R2): 10kOhms Supplier Device Package: SOT-963 | auf Bestellung 72000 Stücke: Lieferzeit 10-14 Tag (e) |
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| NSBC114EDP6T5G | onsemi | Digital Transistors SOT-963 DUAL NBRT | auf Bestellung 2216 Stücke: Lieferzeit 10-14 Tag (e) |
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| NSBC114EDP6T5G | onsemi | Description: TRANS PREBIAS 2NPN 50V SOT-963 Packaging: Bulk Package / Case: SOT-963 Mounting Type: Surface Mount Transistor Type: 2 NPN - Pre-Biased (Dual) Power - Max: 408mW Current - Collector (Ic) (Max): 100mA Voltage - Collector Emitter Breakdown (Max): 50V Vce Saturation (Max) @ Ib, Ic: 250mV @ 300µA, 10mA Current - Collector Cutoff (Max): 500nA DC Current Gain (hFE) (Min) @ Ic, Vce: 35 @ 5mA, 10V Resistor - Base (R1): 10kOhms Resistor - Emitter Base (R2): 10kOhms Supplier Device Package: SOT-963 | auf Bestellung 529587 Stücke: Lieferzeit 10-14 Tag (e) |
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| NSBC114EDP6T5G | ONSEMI | Description: ONSEMI - NSBC114EDP6T5G - BIPOLAR JUNCTION TRANSISTOR ARRAYS - BJT tariffCode: 85412900 productTraceability: No rohsCompliant: YES euEccn: NLR hazardous: false rohsPhthalatesCompliant: YES usEccn: EAR99 SVHC: No SVHC (23-Jan-2024) | auf Bestellung 163999 Stücke: Lieferzeit 14-21 Tag (e) |
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| NSBC114EDP6T5G | onsemi | Description: TRANS PREBIAS 2NPN 50V SOT-963 Packaging: Cut Tape (CT) Package / Case: SOT-963 Mounting Type: Surface Mount Transistor Type: 2 NPN - Pre-Biased (Dual) Power - Max: 408mW Current - Collector (Ic) (Max): 100mA Voltage - Collector Emitter Breakdown (Max): 50V Vce Saturation (Max) @ Ib, Ic: 250mV @ 300µA, 10mA Current - Collector Cutoff (Max): 500nA DC Current Gain (hFE) (Min) @ Ic, Vce: 35 @ 5mA, 10V Resistor - Base (R1): 10kOhms Resistor - Emitter Base (R2): 10kOhms Supplier Device Package: SOT-963 | auf Bestellung 72000 Stücke: Lieferzeit 10-14 Tag (e) |
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| NSBC114EDXV6 | onsemi | Description: TRANS PREBIAS 2NPN 50V SOT-563 Packaging: Bulk Package / Case: SOT-563, SOT-666 Mounting Type: Surface Mount Transistor Type: 2 NPN - Pre-Biased (Dual) Power - Max: 500mW Current - Collector (Ic) (Max): 100mA Voltage - Collector Emitter Breakdown (Max): 50V Vce Saturation (Max) @ Ib, Ic: 250mV @ 300µA, 10mA Current - Collector Cutoff (Max): 500nA DC Current Gain (hFE) (Min) @ Ic, Vce: 35 @ 5mA, 10V Resistor - Base (R1): 10kOhms Resistor - Emitter Base (R2): 10kOhms Supplier Device Package: SOT-563 | auf Bestellung 12000 Stücke: Lieferzeit 10-14 Tag (e) |
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| NSBC114EDXV6 | ONSEMI | Description: ONSEMI - NSBC114EDXV6 - TRANS 2NPN PREBIAS 0.5W SOT563 tariffCode: 85412900 productTraceability: Yes-Date/Lot Code rohsCompliant: YES euEccn: NLR hazardous: false rohsPhthalatesCompliant: YES usEccn: EAR99 SVHC: No SVHC (14-Jun-2023) | auf Bestellung 12000 Stücke: Lieferzeit 14-21 Tag (e) |
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| NSBC114EDXV6T1 | ON Semiconductor | Description: TRANS 2NPN PREBIAS 0.5W SOT563 | Produkt ist nicht verfügbar | Mindestbestellmenge: 10 Stücke Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||||||
| NSBC114EDXV6T1 | ON | 07+; | auf Bestellung 123000 Stücke: Lieferzeit 21-28 Tag (e) | Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||||||
| NSBC114EDXV6T1G | onsemi | Description: TRANS PREBIAS 2NPN 50V SOT-563 Packaging: Tape & Reel (TR) Package / Case: SOT-563, SOT-666 Mounting Type: Surface Mount Transistor Type: 2 NPN - Pre-Biased (Dual) Power - Max: 500mW Current - Collector (Ic) (Max): 100mA Voltage - Collector Emitter Breakdown (Max): 50V Vce Saturation (Max) @ Ib, Ic: 250mV @ 300µA, 10mA Current - Collector Cutoff (Max): 500nA DC Current Gain (hFE) (Min) @ Ic, Vce: 35 @ 5mA, 10V Resistor - Base (R1): 10kOhms Resistor - Emitter Base (R2): 10kOhms Supplier Device Package: SOT-563 | auf Bestellung 16000 Stücke: Lieferzeit 10-14 Tag (e) |
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| NSBC114EDXV6T1G | ON Semiconductor | auf Bestellung 7850 Stücke: Lieferzeit 21-28 Tag (e) | Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||||||
| NSBC114EDXV6T1G | onsemi | Description: TRANS PREBIAS 2NPN 50V SOT-563 Packaging: Cut Tape (CT) Package / Case: SOT-563, SOT-666 Mounting Type: Surface Mount Transistor Type: 2 NPN - Pre-Biased (Dual) Power - Max: 500mW Current - Collector (Ic) (Max): 100mA Voltage - Collector Emitter Breakdown (Max): 50V Vce Saturation (Max) @ Ib, Ic: 250mV @ 300µA, 10mA Current - Collector Cutoff (Max): 500nA DC Current Gain (hFE) (Min) @ Ic, Vce: 35 @ 5mA, 10V Resistor - Base (R1): 10kOhms Resistor - Emitter Base (R2): 10kOhms Supplier Device Package: SOT-563 | auf Bestellung 17543 Stücke: Lieferzeit 10-14 Tag (e) |
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| NSBC114EDXV6T1G | onsemi | Digital Transistors 100mA 50V Dual NPN | auf Bestellung 209060 Stücke: Lieferzeit 10-14 Tag (e) |
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| NSBC114EDXV6T5 | Rochester Electronics, LLC | Description: SMALL SIGNAL BIPOLAR TRANSISTOR | auf Bestellung 896000 Stücke: Lieferzeit 10-14 Tag (e) | Mindestbestellmenge: 4167 Stücke Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||||||
| NSBC114EDXV6T5 | ONSEMI | Description: ONSEMI - NSBC114EDXV6T5 - EACH tariffCode: 85412900 productTraceability: Yes-Date/Lot Code rohsCompliant: YES euEccn: NLR hazardous: false rohsPhthalatesCompliant: YES usEccn: EAR99 SVHC: No SVHC (14-Jun-2023) | auf Bestellung 896000 Stücke: Lieferzeit 14-21 Tag (e) |
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| NSBC114EDXV6T5G | onsemi | Bipolar Transistors - Pre-Biased 100mA 50V Dual NPN | auf Bestellung 13871 Stücke: Lieferzeit 10-14 Tag (e) |
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| NSBC114EDXV6T5G | onsemi | Description: TRANS PREBIAS 2NPN 50V SOT563 Supplier Device Package: SOT-563 Resistor - Emitter Base (R2): 10kOhms Resistor - Base (R1): 10kOhms DC Current Gain (hFE) (Min) @ Ic, Vce: 35 @ 5mA, 10V Current - Collector Cutoff (Max): 500nA Vce Saturation (Max) @ Ib, Ic: 250mV @ 300µA, 10mA Current - Collector (Ic) (Max): 100mA Power - Max: 500mW Transistor Type: 2 NPN - Pre-Biased (Dual) Mounting Type: Surface Mount Package / Case: SOT-563, SOT-666 Packaging: Tape & Reel (TR) Voltage - Collector Emitter Breakdown (Max): 50V | Produkt ist nicht verfügbar | Mindestbestellmenge: 8000 Stücke Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||||||
| NSBC114EDXV6T5G | ON Semiconductor | auf Bestellung 7988 Stücke: Lieferzeit 21-28 Tag (e) | Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||||||
| NSBC114EF3T5G | onsemi | Digital Transistors SOT-1123 NBRT TRNSTR | auf Bestellung 8939 Stücke: Lieferzeit 10-14 Tag (e) |
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| NSBC114EF3T5G | onsemi | Description: TRANS PREBIAS NPN 50V SOT1123 Packaging: Cut Tape (CT) Package / Case: SOT-1123 Mounting Type: Surface Mount Transistor Type: NPN - Pre-Biased Vce Saturation (Max) @ Ib, Ic: 250mV @ 300µA, 10mA Current - Collector Cutoff (Max): 500nA DC Current Gain (hFE) (Min) @ Ic, Vce: 35 @ 5mA, 10V Supplier Device Package: SOT-1123 Current - Collector (Ic) (Max): 100 mA Voltage - Collector Emitter Breakdown (Max): 50 V Power - Max: 254 mW Resistor - Base (R1): 10 kOhms Resistor - Emitter Base (R2): 10 kOhms Resistors Included: R1 and R2 | auf Bestellung 92088 Stücke: Lieferzeit 10-14 Tag (e) |
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| NSBC114EF3T5G | ONSEMI | Description: ONSEMI - NSBC114EF3T5G - BIPOLAR JUNCTION TRANSISTOR ARRAYS - BJT tariffCode: 85412900 productTraceability: No rohsCompliant: YES euEccn: NLR hazardous: false rohsPhthalatesCompliant: YES usEccn: EAR99 SVHC: No SVHC (23-Jan-2024) | auf Bestellung 24000 Stücke: Lieferzeit 14-21 Tag (e) |
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| NSBC114EF3T5G | onsemi | Description: TRANS PREBIAS NPN 50V SOT1123 Packaging: Tape & Reel (TR) Package / Case: SOT-1123 Mounting Type: Surface Mount Transistor Type: NPN - Pre-Biased Vce Saturation (Max) @ Ib, Ic: 250mV @ 300µA, 10mA Current - Collector Cutoff (Max): 500nA DC Current Gain (hFE) (Min) @ Ic, Vce: 35 @ 5mA, 10V Supplier Device Package: SOT-1123 Current - Collector (Ic) (Max): 100 mA Voltage - Collector Emitter Breakdown (Max): 50 V Power - Max: 254 mW Resistor - Base (R1): 10 kOhms Resistor - Emitter Base (R2): 10 kOhms Resistors Included: R1 and R2 | auf Bestellung 80000 Stücke: Lieferzeit 10-14 Tag (e) |
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| NSBC114EMXWTBG | onsemi | Digital Transistors NBRT, 50V, XDFNW3 | auf Bestellung 2384 Stücke: Lieferzeit 10-14 Tag (e) |
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| NSBC114EMXWTBG | onsemi | Description: BIAS RESISTOR TRANSISTORS (BRT) Packaging: Bulk Package / Case: 3-XFDFN Mounting Type: Surface Mount, Wettable Flank Transistor Type: NPN - Pre-Biased Vce Saturation (Max) @ Ib, Ic: 250mV @ 300µA, 10mA Current - Collector Cutoff (Max): 500nA DC Current Gain (hFE) (Min) @ Ic, Vce: 35 @ 5mA, 10V Supplier Device Package: 3-XDFNW (1x1) Current - Collector (Ic) (Max): 100 mA Voltage - Collector Emitter Breakdown (Max): 50 V Power - Max: 450 mW Resistor - Base (R1): 10 kOhms Resistor - Emitter Base (R2): 10 kOhms Resistors Included: R1 and R2 | auf Bestellung 96000 Stücke: Lieferzeit 10-14 Tag (e) |
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| NSBC114EPDP6T1G | Rochester Electronics, LLC | Description: COMPLEMENTARY BIPOLAR TRANSISTOR | auf Bestellung 8000 Stücke: Lieferzeit 10-14 Tag (e) | Mindestbestellmenge: 6250 Stücke Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||||||
| NSBC114EPDP6T5G | ON Semiconductor | Trans Digital BJT NPN/PNP 50V 100mA 408mW 6-Pin SOT-963 T/R | auf Bestellung 8000 Stücke: Lieferzeit 14-21 Tag (e) |
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| NSBC114EPDP6T5G | ON Semiconductor | Trans Digital BJT NPN/PNP 50V 100mA 408mW 6-Pin SOT-963 T/R | auf Bestellung 8000 Stücke: Lieferzeit 14-21 Tag (e) |
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| NSBC114EPDP6T5G | onsemi | Digital Transistors SOT-963 COMP NBRT | auf Bestellung 7406 Stücke: Lieferzeit 10-14 Tag (e) |
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| NSBC114EPDP6T5G | ON Semiconductor | Trans Digital BJT NPN/PNP 50V 100mA 408mW 6-Pin SOT-963 T/R | Produkt ist nicht verfügbar | Mindestbestellmenge: 8000 Stücke Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||||||
| NSBC114EPDP6T5G | onsemi | Description: TRANS PREBIAS 1NPN 1PNP SOT-963 Packaging: Cut Tape (CT) Package / Case: SOT-963 Mounting Type: Surface Mount Transistor Type: 1 NPN, 1 PNP - Pre-Biased (Dual) Power - Max: 339mW Current - Collector (Ic) (Max): 100mA Voltage - Collector Emitter Breakdown (Max): 50V Vce Saturation (Max) @ Ib, Ic: 250mV @ 300µA, 10mA Current - Collector Cutoff (Max): 500nA DC Current Gain (hFE) (Min) @ Ic, Vce: 35 @ 5mA, 10V Resistor - Base (R1): 10kOhms Resistor - Emitter Base (R2): 10kOhms Supplier Device Package: SOT-963 Part Status: Active | auf Bestellung 674 Stücke: Lieferzeit 10-14 Tag (e) |
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| NSBC114EPDP6T5G | ON Semiconductor | Trans Digital BJT NPN/PNP 50V 100mA 408mW 6-Pin SOT-963 T/R | auf Bestellung 11700 Stücke: Lieferzeit 14-21 Tag (e) |
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| NSBC114EPDP6T5G | ONSEMI | Description: ONSEMI - NSBC114EPDP6T5G - BIPOLAR JUNCTION TRANSISTOR ARRAYS - BJT tariffCode: 85412900 productTraceability: No rohsCompliant: YES euEccn: NLR hazardous: false rohsPhthalatesCompliant: YES usEccn: EAR99 SVHC: No SVHC (23-Jan-2024) | auf Bestellung 127970 Stücke: Lieferzeit 14-21 Tag (e) |
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| NSBC114EPDP6T5G | ON Semiconductor | Trans Digital BJT NPN/PNP 50V 100mA 408mW 6-Pin SOT-963 T/R | auf Bestellung 11700 Stücke: Lieferzeit 14-21 Tag (e) |
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| NSBC114EPDP6T5G | onsemi | Description: TRANS PREBIAS 1NPN 1PNP SOT-963 Packaging: Tape & Reel (TR) Package / Case: SOT-963 Mounting Type: Surface Mount Transistor Type: 1 NPN, 1 PNP - Pre-Biased (Dual) Power - Max: 339mW Current - Collector (Ic) (Max): 100mA Voltage - Collector Emitter Breakdown (Max): 50V Vce Saturation (Max) @ Ib, Ic: 250mV @ 300µA, 10mA Current - Collector Cutoff (Max): 500nA DC Current Gain (hFE) (Min) @ Ic, Vce: 35 @ 5mA, 10V Resistor - Base (R1): 10kOhms Resistor - Emitter Base (R2): 10kOhms Supplier Device Package: SOT-963 Part Status: Active | Produkt ist nicht verfügbar | Mindestbestellmenge: 8000 Stücke Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||||||
| NSBC114EPDXV6T1 | onsemi | Description: TRANS PREBIAS 1NPN 1PNP SOT-563 Packaging: Tape & Reel (TR) Package / Case: SOT-563, SOT-666 Mounting Type: Surface Mount Transistor Type: 1 NPN, 1 PNP - Pre-Biased (Dual) Power - Max: 500mW Current - Collector (Ic) (Max): 100mA Voltage - Collector Emitter Breakdown (Max): 50V Vce Saturation (Max) @ Ib, Ic: 250mV @ 300µA, 10mA Current - Collector Cutoff (Max): 500nA DC Current Gain (hFE) (Min) @ Ic, Vce: 35 @ 5mA, 10V Resistor - Base (R1): 10kOhms Resistor - Emitter Base (R2): 10kOhms Supplier Device Package: SOT-563 | Produkt ist nicht verfügbar | Mindestbestellmenge: 4000 Stücke Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||||||
| NSBC114EPDXV6T1 | auf Bestellung 3000 Stücke: Lieferzeit 21-28 Tag (e) | Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||||||||
| NSBC114EPDXV6T1G | ON Semiconductor | auf Bestellung 3900 Stücke: Lieferzeit 21-28 Tag (e) | Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||||||
| NSBC114EPDXV6T1G | onsemi | Description: TRANS PREBIAS 1NPN 1PNP SOT-563 Packaging: Cut Tape (CT) Package / Case: SOT-563, SOT-666 Mounting Type: Surface Mount Transistor Type: 1 NPN, 1 PNP - Pre-Biased (Dual) Power - Max: 500mW Current - Collector (Ic) (Max): 100mA Voltage - Collector Emitter Breakdown (Max): 50V Vce Saturation (Max) @ Ib, Ic: 250mV @ 300µA, 10mA Current - Collector Cutoff (Max): 500nA DC Current Gain (hFE) (Min) @ Ic, Vce: 35 @ 5mA, 10V Resistor - Base (R1): 10kOhms Resistor - Emitter Base (R2): 10kOhms Supplier Device Package: SOT-563 | auf Bestellung 40859 Stücke: Lieferzeit 10-14 Tag (e) |
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| NSBC114EPDXV6T1G | onsemi | Description: TRANS PREBIAS 1NPN 1PNP SOT-563 Packaging: Tape & Reel (TR) Package / Case: SOT-563, SOT-666 Mounting Type: Surface Mount Transistor Type: 1 NPN, 1 PNP - Pre-Biased (Dual) Power - Max: 500mW Current - Collector (Ic) (Max): 100mA Voltage - Collector Emitter Breakdown (Max): 50V Vce Saturation (Max) @ Ib, Ic: 250mV @ 300µA, 10mA Current - Collector Cutoff (Max): 500nA DC Current Gain (hFE) (Min) @ Ic, Vce: 35 @ 5mA, 10V Resistor - Base (R1): 10kOhms Resistor - Emitter Base (R2): 10kOhms Supplier Device Package: SOT-563 | auf Bestellung 40000 Stücke: Lieferzeit 10-14 Tag (e) |
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| NSBC114EPDXV6T1G | onsemi | Digital Transistors 100mA Complementary 50V Dual NPN & PNP | auf Bestellung 68894 Stücke: Lieferzeit 10-14 Tag (e) |
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| NSBC114EPDXV6T5 | auf Bestellung 14000 Stücke: Lieferzeit 21-28 Tag (e) | Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||||||||
| NSBC114EPDXV6T5 | onsemi | Description: TRANS PREBIAS 1NPN 1PNP SOT-563 Packaging: Bulk Package / Case: SOT-563, SOT-666 Mounting Type: Surface Mount Transistor Type: 1 NPN, 1 PNP - Pre-Biased Power - Max: 500mW Current - Collector (Ic) (Max): 100mA Voltage - Collector Emitter Breakdown (Max): 50V Vce Saturation (Max) @ Ib, Ic: 250mV @ 300µA, 10mA Current - Collector Cutoff (Max): 500nA DC Current Gain (hFE) (Min) @ Ic, Vce: 35 @ 5mA, 10V Resistor - Base (R1): 10kOhms Resistor - Emitter Base (R2): 10kOhms Supplier Device Package: SOT-563 | auf Bestellung 242000 Stücke: Lieferzeit 10-14 Tag (e) |
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| NSBC114EPDXV6T5G | ON Semiconductor | Bipolar Transistors - Pre-Biased 100mA Complementary 50V Dual NPN & PNP | auf Bestellung 13390 Stücke: Lieferzeit 10-14 Tag (e) | Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||||||
| NSBC114EPDXV6T5G | ON Semiconductor | Description: TRANS PREBIAS NPN/PNP SOT563 | auf Bestellung 32000 Stücke: Lieferzeit 10-14 Tag (e) | Mindestbestellmenge: 16000 Stücke Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||||||
| NSBC114EPDXVT1G | onsemi | Description: TRANS PREBIAS 1NPN 1PNP SOT-563 Packaging: Bulk Package / Case: SOT-563, SOT-666 Mounting Type: Surface Mount Transistor Type: 1 NPN, 1 PNP - Pre-Biased (Dual) Power - Max: 500mW Current - Collector (Ic) (Max): 100mA Voltage - Collector Emitter Breakdown (Max): 50V Vce Saturation (Max) @ Ib, Ic: 250mV @ 300µA, 10mA Current - Collector Cutoff (Max): 500nA DC Current Gain (hFE) (Min) @ Ic, Vce: 35 @ 5mA, 10V Resistor - Base (R1): 10kOhms Resistor - Emitter Base (R2): 10kOhms Supplier Device Package: SOT-563 | auf Bestellung 16000 Stücke: Lieferzeit 10-14 Tag (e) |
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| NSBC114EPDXVT1G | ONSEMI | Description: ONSEMI - NSBC114EPDXVT1G - SS SOT563 DUAL RSTR XSTR tariffCode: 85412900 productTraceability: Yes-Date/Lot Code rohsCompliant: YES euEccn: NLR hazardous: false rohsPhthalatesCompliant: YES usEccn: EAR99 SVHC: No SVHC (14-Jun-2023) | auf Bestellung 16000 Stücke: Lieferzeit 14-21 Tag (e) |
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| NSBC114TDP6T5G | onsemi | Digital Transistors DUAL NBRT | auf Bestellung 8000 Stücke: Lieferzeit 10-14 Tag (e) |
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| NSBC114TDP6T5G | onsemi | Description: TRANS PREBIAS 2NPN 50V SOT-963 Packaging: Cut Tape (CT) Package / Case: SOT-963 Mounting Type: Surface Mount Transistor Type: 2 NPN - Pre-Biased (Dual) Power - Max: 339mW Current - Collector (Ic) (Max): 100mA Voltage - Collector Emitter Breakdown (Max): 50V Vce Saturation (Max) @ Ib, Ic: 250mV @ 1mA, 10mA Current - Collector Cutoff (Max): 500nA DC Current Gain (hFE) (Min) @ Ic, Vce: 160 @ 5mA, 10V Resistor - Base (R1): 10kOhms Supplier Device Package: SOT-963 | auf Bestellung 7900 Stücke: Lieferzeit 10-14 Tag (e) |
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| NSBC114TDP6T5G | onsemi | Description: TRANS PREBIAS 2NPN 50V SOT-963 Packaging: Tape & Reel (TR) Package / Case: SOT-963 Mounting Type: Surface Mount Transistor Type: 2 NPN - Pre-Biased (Dual) Power - Max: 339mW Current - Collector (Ic) (Max): 100mA Voltage - Collector Emitter Breakdown (Max): 50V Vce Saturation (Max) @ Ib, Ic: 250mV @ 1mA, 10mA Current - Collector Cutoff (Max): 500nA DC Current Gain (hFE) (Min) @ Ic, Vce: 160 @ 5mA, 10V Resistor - Base (R1): 10kOhms Supplier Device Package: SOT-963 | Produkt ist nicht verfügbar | Mindestbestellmenge: 8000 Stücke Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||||||
| NSBC114TDP6T5G | ONSEMI | Description: ONSEMI - NSBC114TDP6T5G - BIPOLAR JUNCTION TRANSISTOR ARRAYS - BJT tariffCode: 85412900 productTraceability: No rohsCompliant: YES euEccn: NLR hazardous: false rohsPhthalatesCompliant: YES usEccn: EAR99 SVHC: No SVHC (23-Jan-2024) | auf Bestellung 58833 Stücke: Lieferzeit 14-21 Tag (e) |
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| NSBC114TDXV6 | ONSEMI | Description: ONSEMI - NSBC114TDXV6 - NSBC114 - TRANS 2NPN PREBIAS 0.5W SOT563 tariffCode: 85412900 productTraceability: Yes-Date/Lot Code rohsCompliant: YES euEccn: NLR hazardous: false rohsPhthalatesCompliant: YES usEccn: EAR99 SVHC: No SVHC (14-Jun-2023) | auf Bestellung 80000 Stücke: Lieferzeit 14-21 Tag (e) |
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| NSBC114TDXV6 | onsemi | Description: TRANS PREBIAS 2NPN 50V SOT-563 Packaging: Bulk Package / Case: SOT-563, SOT-666 Mounting Type: Surface Mount Transistor Type: 2 NPN - Pre-Biased (Dual) Power - Max: 500mW Current - Collector (Ic) (Max): 100mA Voltage - Collector Emitter Breakdown (Max): 50V Vce Saturation (Max) @ Ib, Ic: 250mV @ 1mA, 10mA Current - Collector Cutoff (Max): 500nA DC Current Gain (hFE) (Min) @ Ic, Vce: 160 @ 5mA, 10V Resistor - Base (R1): 10kOhms Supplier Device Package: SOT-563 | auf Bestellung 80000 Stücke: Lieferzeit 10-14 Tag (e) |
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| NSBC114TDXV6T1 | ONSEMI | Description: ONSEMI - NSBC114TDXV6T1 - EACH tariffCode: 85412900 productTraceability: Yes-Date/Lot Code rohsCompliant: YES euEccn: NLR hazardous: false rohsPhthalatesCompliant: YES usEccn: EAR99 SVHC: No SVHC (14-Jun-2023) | auf Bestellung 228000 Stücke: Lieferzeit 14-21 Tag (e) |
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| NSBC114TDXV6T1 | auf Bestellung 3000 Stücke: Lieferzeit 21-28 Tag (e) | Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||||||||
| NSBC114TDXV6T1 | onsemi | Description: TRANS 2NPN PREBIAS 0.5W SOT563 Packaging: Bulk | auf Bestellung 228000 Stücke: Lieferzeit 10-14 Tag (e) |
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| NSBC114TDXV6T1G | onsemi | Description: TRANS PREBIAS 2NPN 50V SOT-563 Packaging: Tape & Reel (TR) Package / Case: SOT-563, SOT-666 Mounting Type: Surface Mount Transistor Type: 2 NPN - Pre-Biased (Dual) Power - Max: 500mW Current - Collector (Ic) (Max): 100mA Voltage - Collector Emitter Breakdown (Max): 50V Vce Saturation (Max) @ Ib, Ic: 250mV @ 1mA, 10mA Current - Collector Cutoff (Max): 500nA DC Current Gain (hFE) (Min) @ Ic, Vce: 160 @ 5mA, 10V Resistor - Base (R1): 10kOhms Supplier Device Package: SOT-563 | auf Bestellung 16000 Stücke: Lieferzeit 10-14 Tag (e) |
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| NSBC114TDXV6T1G | onsemi | Description: TRANS PREBIAS 2NPN 50V SOT-563 Packaging: Cut Tape (CT) Package / Case: SOT-563, SOT-666 Mounting Type: Surface Mount Transistor Type: 2 NPN - Pre-Biased (Dual) Power - Max: 500mW Current - Collector (Ic) (Max): 100mA Voltage - Collector Emitter Breakdown (Max): 50V Vce Saturation (Max) @ Ib, Ic: 250mV @ 1mA, 10mA Current - Collector Cutoff (Max): 500nA DC Current Gain (hFE) (Min) @ Ic, Vce: 160 @ 5mA, 10V Resistor - Base (R1): 10kOhms Supplier Device Package: SOT-563 | auf Bestellung 19890 Stücke: Lieferzeit 10-14 Tag (e) |
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| NSBC114TDXV6T1G | onsemi | Digital Transistors 100mA 50V Dual NPN | auf Bestellung 7750 Stücke: Lieferzeit 10-14 Tag (e) |
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| NSBC114TDXV6T5 | onsemi | Description: TRANS PREBIAS 2NPN 50V SOT-563 Packaging: Bulk Package / Case: SOT-563, SOT-666 Mounting Type: Surface Mount Transistor Type: 2 NPN - Pre-Biased (Dual) Power - Max: 500mW Current - Collector (Ic) (Max): 100mA Voltage - Collector Emitter Breakdown (Max): 50V Vce Saturation (Max) @ Ib, Ic: 250mV @ 1mA, 10mA Current - Collector Cutoff (Max): 500nA DC Current Gain (hFE) (Min) @ Ic, Vce: 160 @ 5mA, 10V Resistor - Base (R1): 10kOhms Supplier Device Package: SOT-563 | auf Bestellung 107600 Stücke: Lieferzeit 10-14 Tag (e) |
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| NSBC114TDXV6T5 | ONSEMI | Description: ONSEMI - NSBC114TDXV6T5 - EACH tariffCode: 85412900 productTraceability: Yes-Date/Lot Code rohsCompliant: YES euEccn: NLR hazardous: false rohsPhthalatesCompliant: YES usEccn: EAR99 SVHC: No SVHC (14-Jun-2023) | auf Bestellung 107600 Stücke: Lieferzeit 14-21 Tag (e) |
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| NSBC114TDXV6T5 | onsemi | Description: TRANS PREBIAS 2NPN 50V SOT-563 Packaging: Tape & Reel (TR) Package / Case: SOT-563, SOT-666 Mounting Type: Surface Mount Transistor Type: 2 NPN - Pre-Biased (Dual) Power - Max: 500mW Current - Collector (Ic) (Max): 100mA Voltage - Collector Emitter Breakdown (Max): 50V Vce Saturation (Max) @ Ib, Ic: 250mV @ 1mA, 10mA Current - Collector Cutoff (Max): 500nA DC Current Gain (hFE) (Min) @ Ic, Vce: 160 @ 5mA, 10V Resistor - Base (R1): 10kOhms Supplier Device Package: SOT-563 | Produkt ist nicht verfügbar | Mindestbestellmenge: 8000 Stücke Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||||||
| NSBC114TDXV6T5 | auf Bestellung 60000 Stücke: Lieferzeit 21-28 Tag (e) | Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||||||||
| NSBC114TDXV6T5G | ON Semiconductor | Bipolar Transistors - Pre-Biased 50 V Dual NPN BiPolar DRT | auf Bestellung 5598 Stücke: Lieferzeit 10-14 Tag (e) | Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||||||
| NSBC114TDXV6T5G | onsemi | Description: TRANS PREBIAS 2NPN 50V SOT-563 Packaging: Tape & Reel (TR) Package / Case: SOT-563, SOT-666 Mounting Type: Surface Mount Transistor Type: 2 NPN - Pre-Biased (Dual) Power - Max: 500mW Current - Collector (Ic) (Max): 100mA Voltage - Collector Emitter Breakdown (Max): 50V Vce Saturation (Max) @ Ib, Ic: 250mV @ 1mA, 10mA Current - Collector Cutoff (Max): 500nA DC Current Gain (hFE) (Min) @ Ic, Vce: 160 @ 5mA, 10V Resistor - Base (R1): 10kOhms Supplier Device Package: SOT-563 | Produkt ist nicht verfügbar | Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||||||
| NSBC114TDXV6T5G | onsemi | Description: TRANS PREBIAS 2NPN 50V SOT-563 Packaging: Bulk Package / Case: SOT-563, SOT-666 Mounting Type: Surface Mount Transistor Type: 2 NPN - Pre-Biased (Dual) Power - Max: 500mW Current - Collector (Ic) (Max): 100mA Voltage - Collector Emitter Breakdown (Max): 50V Vce Saturation (Max) @ Ib, Ic: 250mV @ 1mA, 10mA Current - Collector Cutoff (Max): 500nA DC Current Gain (hFE) (Min) @ Ic, Vce: 160 @ 5mA, 10V Resistor - Base (R1): 10kOhms Supplier Device Package: SOT-563 | auf Bestellung 40000 Stücke: Lieferzeit 10-14 Tag (e) |
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| NSBC114TF3T5G | onsemi | Description: TRANS PREBIAS NPN 50V SOT1123 Packaging: Bulk Package / Case: SOT-1123 Mounting Type: Surface Mount Transistor Type: NPN - Pre-Biased Vce Saturation (Max) @ Ib, Ic: 250mV @ 1mA, 10mA Current - Collector Cutoff (Max): 500nA DC Current Gain (hFE) (Min) @ Ic, Vce: 160 @ 5mA, 10V Supplier Device Package: SOT-1123 Current - Collector (Ic) (Max): 100 mA Voltage - Collector Emitter Breakdown (Max): 50 V Power - Max: 254 mW Resistor - Base (R1): 10 kOhms Resistors Included: R1 Only | auf Bestellung 472000 Stücke: Lieferzeit 10-14 Tag (e) |
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| NSBC114TF3T5G | onsemi | Description: TRANS PREBIAS NPN 50V SOT1123 Packaging: Tape & Reel (TR) Package / Case: SOT-1123 Mounting Type: Surface Mount Transistor Type: NPN - Pre-Biased Vce Saturation (Max) @ Ib, Ic: 250mV @ 1mA, 10mA Current - Collector Cutoff (Max): 500nA DC Current Gain (hFE) (Min) @ Ic, Vce: 160 @ 5mA, 10V Supplier Device Package: SOT-1123 Current - Collector (Ic) (Max): 100 mA Voltage - Collector Emitter Breakdown (Max): 50 V Power - Max: 254 mW Resistor - Base (R1): 10 kOhms Resistors Included: R1 Only | Produkt ist nicht verfügbar | Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||||||
| NSBC114TF3T5G | onsemi | Digital Transistors SOT-1123 NBRT TRANSISTOR | auf Bestellung 7934 Stücke: Lieferzeit 10-14 Tag (e) |
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| NSBC114TPDXV6T1 | ONSEMI | Description: ONSEMI - NSBC114TPDXV6T1 - EACH tariffCode: 85412900 productTraceability: No rohsCompliant: YES euEccn: NLR hazardous: false rohsPhthalatesCompliant: YES usEccn: EAR99 SVHC: No SVHC (14-Jun-2023) | auf Bestellung 83930 Stücke: Lieferzeit 14-21 Tag (e) |
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| NSBC114TPDXV6T1 | onsemi | Description: TRANS PREBIAS 1NPN 1PNP SOT-563 Packaging: Tape & Reel (TR) Package / Case: SOT-563, SOT-666 Mounting Type: Surface Mount Transistor Type: 1 NPN, 1 PNP - Pre-Biased (Dual) Power - Max: 500mW Current - Collector (Ic) (Max): 100mA Voltage - Collector Emitter Breakdown (Max): 50V Vce Saturation (Max) @ Ib, Ic: 250mV @ 1mA, 10mA Current - Collector Cutoff (Max): 500nA DC Current Gain (hFE) (Min) @ Ic, Vce: 160 @ 5mA, 10V Resistor - Base (R1): 10kOhms Supplier Device Package: SOT-563 | Produkt ist nicht verfügbar | Mindestbestellmenge: 4000 Stücke Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||||||
| NSBC114TPDXV6T1 | onsemi | Description: TRANS PREBIAS 1NPN 1PNP SOT-563 Packaging: Bulk Package / Case: SOT-563, SOT-666 Mounting Type: Surface Mount Transistor Type: 1 NPN, 1 PNP - Pre-Biased (Dual) Power - Max: 500mW Current - Collector (Ic) (Max): 100mA Voltage - Collector Emitter Breakdown (Max): 50V Vce Saturation (Max) @ Ib, Ic: 250mV @ 1mA, 10mA Current - Collector Cutoff (Max): 500nA DC Current Gain (hFE) (Min) @ Ic, Vce: 160 @ 5mA, 10V Resistor - Base (R1): 10kOhms Supplier Device Package: SOT-563 | auf Bestellung 83930 Stücke: Lieferzeit 10-14 Tag (e) |
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| NSBC114TPDXV6T1G | onsemi | Description: TRANS PREBIAS 1NPN 1PNP SOT-563 Packaging: Bulk Package / Case: SOT-563, SOT-666 Mounting Type: Surface Mount Transistor Type: 1 NPN, 1 PNP - Pre-Biased (Dual) Power - Max: 500mW Current - Collector (Ic) (Max): 100mA Voltage - Collector Emitter Breakdown (Max): 50V Vce Saturation (Max) @ Ib, Ic: 250mV @ 1mA, 10mA Current - Collector Cutoff (Max): 500nA DC Current Gain (hFE) (Min) @ Ic, Vce: 160 @ 5mA, 10V Resistor - Base (R1): 10kOhms Supplier Device Package: SOT-563 | auf Bestellung 202500 Stücke: Lieferzeit 10-14 Tag (e) |
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| NSBC114TPDXV6T1G | onsemi | Digital Transistors 100mA Complementary 50V Dual NPN & PNP | auf Bestellung 4000 Stücke: Lieferzeit 10-14 Tag (e) |
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| NSBC114TPDXV6T1G | onsemi | Description: TRANS PREBIAS 1NPN 1PNP SOT-563 Packaging: Cut Tape (CT) Package / Case: SOT-563, SOT-666 Mounting Type: Surface Mount Transistor Type: 1 NPN, 1 PNP - Pre-Biased (Dual) Power - Max: 500mW Current - Collector (Ic) (Max): 100mA Voltage - Collector Emitter Breakdown (Max): 50V Vce Saturation (Max) @ Ib, Ic: 250mV @ 1mA, 10mA Current - Collector Cutoff (Max): 500nA DC Current Gain (hFE) (Min) @ Ic, Vce: 160 @ 5mA, 10V Resistor - Base (R1): 10kOhms Supplier Device Package: SOT-563 | auf Bestellung 100000 Stücke: Lieferzeit 10-14 Tag (e) |
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| NSBC114TPDXV6T1G | ONSEMI | Description: ONSEMI - NSBC114TPDXV6T1G - BIPOLAR JUNCTION TRANSISTOR ARRAYS - BJT tariffCode: 85412900 productTraceability: No rohsCompliant: YES euEccn: NLR hazardous: false rohsPhthalatesCompliant: YES usEccn: EAR99 SVHC: No SVHC (23-Jan-2024) | auf Bestellung 102500 Stücke: Lieferzeit 14-21 Tag (e) |
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| NSBC114TPDXV6T1G | onsemi | Description: TRANS PREBIAS 1NPN 1PNP SOT-563 Packaging: Tape & Reel (TR) Package / Case: SOT-563, SOT-666 Mounting Type: Surface Mount Transistor Type: 1 NPN, 1 PNP - Pre-Biased (Dual) Power - Max: 500mW Current - Collector (Ic) (Max): 100mA Voltage - Collector Emitter Breakdown (Max): 50V Vce Saturation (Max) @ Ib, Ic: 250mV @ 1mA, 10mA Current - Collector Cutoff (Max): 500nA DC Current Gain (hFE) (Min) @ Ic, Vce: 160 @ 5mA, 10V Resistor - Base (R1): 10kOhms Supplier Device Package: SOT-563 | auf Bestellung 100000 Stücke: Lieferzeit 10-14 Tag (e) |
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| NSBC114XDXV6T1 | ON | auf Bestellung 12000 Stücke: Lieferzeit 21-28 Tag (e) | Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||||||
| NSBC114YDCV6T5 | auf Bestellung 1470 Stücke: Lieferzeit 21-28 Tag (e) | Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||||||||
| NSBC114YDP6T5G | onsemi | Description: TRANS PREBIAS 2NPN 50V SOT-963 Packaging: Cut Tape (CT) Package / Case: SOT-963 Mounting Type: Surface Mount Transistor Type: 2 NPN - Pre-Biased (Dual) Power - Max: 339mW Current - Collector (Ic) (Max): 100mA Voltage - Collector Emitter Breakdown (Max): 50V Vce Saturation (Max) @ Ib, Ic: 250mV @ 300µA, 10mA Current - Collector Cutoff (Max): 500nA DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 5mA, 10V Resistor - Base (R1): 10kOhms Resistor - Emitter Base (R2): 47kOhms Supplier Device Package: SOT-963 | auf Bestellung 122126 Stücke: Lieferzeit 10-14 Tag (e) |
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| NSBC114YDP6T5G | ONSEMI | Description: ONSEMI - NSBC114YDP6T5G - BIPOLAR JUNCTION TRANSISTOR ARRAYS - BJT tariffCode: 85412900 productTraceability: No rohsCompliant: YES euEccn: NLR hazardous: false rohsPhthalatesCompliant: YES usEccn: EAR99 SVHC: No SVHC (23-Jan-2024) | auf Bestellung 182991 Stücke: Lieferzeit 14-21 Tag (e) |
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| NSBC114YDP6T5G | ON Semiconductor | auf Bestellung 7690 Stücke: Lieferzeit 21-28 Tag (e) | Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||||||
| NSBC114YDP6T5G | onsemi | Description: TRANS PREBIAS 2NPN 50V SOT-963 Packaging: Tape & Reel (TR) Package / Case: SOT-963 Mounting Type: Surface Mount Transistor Type: 2 NPN - Pre-Biased (Dual) Power - Max: 339mW Current - Collector (Ic) (Max): 100mA Voltage - Collector Emitter Breakdown (Max): 50V Vce Saturation (Max) @ Ib, Ic: 250mV @ 300µA, 10mA Current - Collector Cutoff (Max): 500nA DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 5mA, 10V Resistor - Base (R1): 10kOhms Resistor - Emitter Base (R2): 47kOhms Supplier Device Package: SOT-963 | auf Bestellung 120000 Stücke: Lieferzeit 10-14 Tag (e) |
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| NSBC114YDP6T5G | onsemi | Digital Transistors SOT-963 DUAL NBRT | auf Bestellung 31600 Stücke: Lieferzeit 10-14 Tag (e) |
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| NSBC114YDXV6T1 | ONSEMI | Description: ONSEMI - NSBC114YDXV6T1 - EACH tariffCode: 85412900 productTraceability: Yes-Date/Lot Code rohsCompliant: YES euEccn: NLR hazardous: false rohsPhthalatesCompliant: YES usEccn: EAR99 SVHC: No SVHC (14-Jun-2023) | auf Bestellung 23960 Stücke: Lieferzeit 14-21 Tag (e) |
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| NSBC114YDXV6T1 | Onsemi | SOT363 | auf Bestellung 16000 Stücke: Lieferzeit 21-28 Tag (e) | Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||||||
| NSBC114YDXV6T1 | onsemi | Description: TRANS PREBIAS 2NPN 50V SOT-563 Packaging: Bulk Package / Case: SOT-563, SOT-666 Mounting Type: Surface Mount Transistor Type: 2 NPN - Pre-Biased (Dual) Power - Max: 500mW Current - Collector (Ic) (Max): 100mA Voltage - Collector Emitter Breakdown (Max): 50V Vce Saturation (Max) @ Ib, Ic: 250mV @ 300µA, 10mA Current - Collector Cutoff (Max): 500nA DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 5mA, 10V Resistor - Base (R1): 10kOhms Resistor - Emitter Base (R2): 47kOhms Supplier Device Package: SOT-563 | auf Bestellung 23960 Stücke: Lieferzeit 10-14 Tag (e) |
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| NSBC114YDXV6T1 | onsemi | Description: TRANS PREBIAS 2NPN 50V SOT-563 Packaging: Tape & Reel (TR) Package / Case: SOT-563, SOT-666 Mounting Type: Surface Mount Transistor Type: 2 NPN - Pre-Biased (Dual) Power - Max: 500mW Current - Collector (Ic) (Max): 100mA Voltage - Collector Emitter Breakdown (Max): 50V Vce Saturation (Max) @ Ib, Ic: 250mV @ 300µA, 10mA Current - Collector Cutoff (Max): 500nA DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 5mA, 10V Resistor - Base (R1): 10kOhms Resistor - Emitter Base (R2): 47kOhms Supplier Device Package: SOT-563 | Produkt ist nicht verfügbar | Mindestbestellmenge: 4000 Stücke Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||||||
| NSBC114YDXV6T1G | onsemi | Description: TRANS PREBIAS 2NPN 50V SOT-563 Packaging: Tape & Reel (TR) Package / Case: SOT-563, SOT-666 Mounting Type: Surface Mount Transistor Type: 2 NPN - Pre-Biased (Dual) Power - Max: 500mW Current - Collector (Ic) (Max): 100mA Voltage - Collector Emitter Breakdown (Max): 50V Vce Saturation (Max) @ Ib, Ic: 250mV @ 300µA, 10mA Current - Collector Cutoff (Max): 500nA DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 5mA, 10V Resistor - Base (R1): 10kOhms Resistor - Emitter Base (R2): 47kOhms Supplier Device Package: SOT-563 | Produkt ist nicht verfügbar | Mindestbestellmenge: 4000 Stücke Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||||||
| NSBC114YDXV6T1G | ONSEMI | Description: ONSEMI - NSBC114YDXV6T1G - Bipolarer Transistor, pre-biased/digital, Zweifach npn, 50 V, 100 mA, 10 kohm, 47 kohm tariffCode: 85412100 Transistormontage: Oberflächenmontage rohsCompliant: YES DC-Stromverstärkung (hFE), min.: 80hFE hazardous: false rohsPhthalatesCompliant: YES Qualifikation: - Basis-Eingangswiderstand R1: 10kohm isCanonical: N MSL: MSL 1 - unbegrenzt usEccn: EAR99 Kollektor-Emitter-Spannung, NPN, max.: 50V Basis-Emitter-Widerstand R2: 47kohm euEccn: NLR Verlustleistung: 500mW Bauform - Transistor: SOT-563 Dauerkollektorstrom: 100mA Anzahl der Pins: 6 Pins Produktpalette: - productTraceability: No Wandlerpolarität: Zweifach npn Betriebstemperatur, max.: 150°C Kollektor-Emitter-Spannung, PNP, max.: - SVHC: No SVHC (27-Jun-2024) | auf Bestellung 862 Stücke: Lieferzeit 14-21 Tag (e) |
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| NSBC114YDXV6T1G | Fairchild Semiconductor | Description: TRANS PREBIAS 2NPN 50V SOT-563 Packaging: Bulk Package / Case: SOT-563, SOT-666 Mounting Type: Surface Mount Transistor Type: 2 NPN - Pre-Biased Power - Max: 500mW Current - Collector (Ic) (Max): 100mA Voltage - Collector Emitter Breakdown (Max): 50V Vce Saturation (Max) @ Ib, Ic: 250mV @ 300µA, 10mA Current - Collector Cutoff (Max): 500nA DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 5mA, 10V Resistor - Base (R1): 10kOhms Resistor - Emitter Base (R2): 47kOhms Supplier Device Package: SOT-563 | auf Bestellung 4000 Stücke: Lieferzeit 10-14 Tag (e) |
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| NSBC114YDXV6T1G | onsemi | Digital Transistors 100mA 50V Dual NPN | auf Bestellung 5042 Stücke: Lieferzeit 10-14 Tag (e) |
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| NSBC114YDXV6T1G | ONSEMI | Description: ONSEMI - NSBC114YDXV6T1G - Bipolarer Transistor, pre-biased/digital, Zweifach npn, 50 V, 100 mA, 10 kohm, 47 kohm tariffCode: 85412100 Transistormontage: Oberflächenmontage rohsCompliant: YES DC-Stromverstärkung (hFE), min.: 80hFE hazardous: false rohsPhthalatesCompliant: YES Qualifikation: - Basis-Eingangswiderstand R1: 10kohm isCanonical: Y MSL: MSL 1 - unbegrenzt usEccn: EAR99 Kollektor-Emitter-Spannung, NPN, max.: 50V Basis-Emitter-Widerstand R2: 47kohm euEccn: NLR Verlustleistung: 500mW Bauform - Transistor: SOT-563 Dauerkollektorstrom: 100mA Anzahl der Pins: 6 Pins Produktpalette: - productTraceability: No Wandlerpolarität: Zweifach npn Betriebstemperatur, max.: 150°C Kollektor-Emitter-Spannung, PNP, max.: - SVHC: No SVHC (27-Jun-2024) | auf Bestellung 862 Stücke: Lieferzeit 14-21 Tag (e) |
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| NSBC114YDXV6T1G | onsemi | Description: TRANS PREBIAS 2NPN 50V SOT-563 Packaging: Cut Tape (CT) Package / Case: SOT-563, SOT-666 Mounting Type: Surface Mount Transistor Type: 2 NPN - Pre-Biased (Dual) Power - Max: 500mW Current - Collector (Ic) (Max): 100mA Voltage - Collector Emitter Breakdown (Max): 50V Vce Saturation (Max) @ Ib, Ic: 250mV @ 300µA, 10mA Current - Collector Cutoff (Max): 500nA DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 5mA, 10V Resistor - Base (R1): 10kOhms Resistor - Emitter Base (R2): 47kOhms Supplier Device Package: SOT-563 | auf Bestellung 2620 Stücke: Lieferzeit 10-14 Tag (e) |
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| NSBC114YDXV6T1G | ONSEMI | Description: ONSEMI - NSBC114YDXV6T1G - BIPOLAR JUNCTION TRANSISTOR ARRAYS - BJT tariffCode: 85412900 productTraceability: No rohsCompliant: YES euEccn: NLR hazardous: false rohsPhthalatesCompliant: YES usEccn: EAR99 SVHC: No SVHC (23-Jan-2024) | auf Bestellung 4000 Stücke: Lieferzeit 14-21 Tag (e) | Mindestbestellmenge: 4000 Stücke Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||||||
| NSBC114YDXV6T1G | auf Bestellung 5000 Stücke: Lieferzeit 21-28 Tag (e) | Im Einkaufswagen Stück im Wert von UAH |
