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PJQ5544-AU_R2_002A1PanjitMOSFETs 40V N-Channel Enhancement Mode MOSFET
auf Bestellung 2199 Stücke:
Lieferzeit 10-14 Tag (e)
2+3.17 EUR
10+2.15 EUR
100+1.52 EUR
500+1.29 EUR
1000+1.18 EUR
3000+1.09 EUR
6000+1.08 EUR
Mindestbestellmenge: 2 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
PJQ5544-AU_R2_002A1Panjit International Inc.Description: 40V N-CHANNEL ENHANCEMENT MODE M
Qualification: AEC-Q101
Input Capacitance (Ciss) (Max) @ Vds: 2851 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 41 nC @ 10 V
Drain to Source Voltage (Vdss): 40 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Grade: Automotive
Supplier Device Package: DFN5060-8
Vgs(th) (Max) @ Id: 2.3V @ 50µA
Power Dissipation (Max): 3.3W (Ta), 100W (Tc)
Rds On (Max) @ Id, Vgs: 3.3mOhm @ 20A, 10V
Current - Continuous Drain (Id) @ 25°C: 24A (Ta), 130A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-PowerVDFN
Packaging: Cut Tape (CT)
auf Bestellung 2240 Stücke:
Lieferzeit 10-14 Tag (e)
6+3.52 EUR
10+2.38 EUR
100+1.69 EUR
500+1.43 EUR
1000+1.31 EUR
Mindestbestellmenge: 6 Stücke
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PJQ5544S6-AU_R2_002A1Panjit International Inc.Description: 40V N-CHANNEL ENHANCEMENT MODE M
Qualification: AEC-Q101
Input Capacitance (Ciss) (Max) @ Vds: 1830 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 56 nC @ 10 V
Drain to Source Voltage (Vdss): 40 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Grade: Automotive
Supplier Device Package: DFN5060-8
Vgs(th) (Max) @ Id: 2.2V @ 250µA
Power Dissipation (Max): 3.3W (Ta), 67W (Tc)
Rds On (Max) @ Id, Vgs: 3.6mOhm @ 20A, 10V
Current - Continuous Drain (Id) @ 25°C: 23A (Ta), 101A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-PowerVDFN
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar
 Mindestbestellmenge: 3000 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
PJQ5544S6-AU_R2_002A1PanJit SemiconductorCategory: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 101A; DFN5060-8
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 101A
Case: DFN5060-8
Gate-source voltage: 20V
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
Application: automotive industry
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
PJQ5544S6-AU_R2_002A1PanjitMOSFETs 40V N-Channel Enhancement Mode MOSFET
Produkt ist nicht verfügbar
 Mindestbestellmenge: 3000 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
PJQ5544S6-AU_R2_002A1Panjit International Inc.Description: 40V N-CHANNEL ENHANCEMENT MODE M
Qualification: AEC-Q101
Input Capacitance (Ciss) (Max) @ Vds: 1830 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 56 nC @ 10 V
Drain to Source Voltage (Vdss): 40 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Grade: Automotive
Supplier Device Package: DFN5060-8
Vgs(th) (Max) @ Id: 2.2V @ 250µA
Power Dissipation (Max): 3.3W (Ta), 67W (Tc)
Rds On (Max) @ Id, Vgs: 3.6mOhm @ 20A, 10V
Current - Continuous Drain (Id) @ 25°C: 23A (Ta), 101A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-PowerVDFN
Packaging: Cut Tape (CT)
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
PJQ5544S6V-AU_R2_002A1PanJit SemiconductorCategory: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 90A; DFN5060-8
Type of transistor: N-MOSFET
Drain-source voltage: 40V
Drain current: 90A
Case: DFN5060-8
Gate-source voltage: 20V
Mounting: SMD
Kind of channel: enhancement
Kind of package: reel; tape
Application: automotive industry
Polarisation: unipolar
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
PJQ5544S6V-AU_R2_002A1PanjitMOSFETs 40V N-Channel Enhancement Mode MOSFET
Produkt ist nicht verfügbar
 Mindestbestellmenge: 3000 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
PJQ5544V-AU_R2_002A1Panjit International Inc.Description: 40V N-CHANNEL ENHANCEMENT MODE M
Drive Voltage (Max Rds On, Min Rds On): 7V, 10V
Grade: Automotive
Supplier Device Package: DFN5060-8
Vgs(th) (Max) @ Id: 3.5V @ 50µA
Power Dissipation (Max): 3.3W (Ta), 94W (Tc)
Rds On (Max) @ Id, Vgs: 3.6mOhm @ 20A, 10V
Current - Continuous Drain (Id) @ 25°C: 22.7A (Ta), 120A (Tc)
FET Type: N-Channel
Qualification: AEC-Q101
Input Capacitance (Ciss) (Max) @ Vds: 2544 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 34 nC @ 10 V
Drain to Source Voltage (Vdss): 40 V
Vgs (Max): ±20V
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-PowerVDFN
Packaging: Cut Tape (CT)
auf Bestellung 2990 Stücke:
Lieferzeit 10-14 Tag (e)
6+3.64 EUR
10+2.46 EUR
100+1.75 EUR
500+1.48 EUR
1000+1.36 EUR
Mindestbestellmenge: 6 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
PJQ5544V-AU_R2_002A1Panjit International Inc.Description: 40V N-CHANNEL ENHANCEMENT MODE M
Current - Continuous Drain (Id) @ 25°C: 22.7A (Ta), 120A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-PowerVDFN
Packaging: Tape & Reel (TR)
Qualification: AEC-Q101
Input Capacitance (Ciss) (Max) @ Vds: 2544 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 34 nC @ 10 V
Drain to Source Voltage (Vdss): 40 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 7V, 10V
Grade: Automotive
Supplier Device Package: DFN5060-8
Vgs(th) (Max) @ Id: 3.5V @ 50µA
Power Dissipation (Max): 3.3W (Ta), 94W (Tc)
Rds On (Max) @ Id, Vgs: 3.6mOhm @ 20A, 10V
Produkt ist nicht verfügbar
 Mindestbestellmenge: 3000 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
PJQ5544V-AU_R2_002A1PanjitMOSFETs 40V N-Channel Enhancement Mode MOSFET
auf Bestellung 2800 Stücke:
Lieferzeit 10-14 Tag (e)
2+2.84 EUR
10+1.8 EUR
100+1.25 EUR
Mindestbestellmenge: 2 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
PJQ5546-AU_R2_002A1Panjit International Inc.Description: 40V N-CHANNEL ENHANCEMENT MODE M
Packaging: Cut Tape (CT)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 18.7A (Ta), 85A (Tc)
Rds On (Max) @ Id, Vgs: 5.3mOhm @ 20A, 10V
Power Dissipation (Max): 3.3W (Ta), 68W (Tc)
Vgs(th) (Max) @ Id: 2.3V @ 50µA
Supplier Device Package: DFN5060-8
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 20 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1320 pF @ 25 V
Qualification: AEC-Q101
auf Bestellung 2170 Stücke:
Lieferzeit 10-14 Tag (e)
9+2.45 EUR
13+1.67 EUR
100+1.15 EUR
500+0.98 EUR
1000+0.89 EUR
Mindestbestellmenge: 9 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
PJQ5546-AU_R2_002A1PanjitMOSFETs 40V N-Channel Enhancement Mode MOSFET
auf Bestellung 2765 Stücke:
Lieferzeit 10-14 Tag (e)
2+2.23 EUR
10+1.5 EUR
100+1.05 EUR
500+0.88 EUR
1000+0.81 EUR
3000+0.68 EUR
Mindestbestellmenge: 2 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
PJQ5546-AU_R2_002A1Panjit International Inc.Description: 40V N-CHANNEL ENHANCEMENT MODE M
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 18.7A (Ta), 85A (Tc)
Rds On (Max) @ Id, Vgs: 5.3mOhm @ 20A, 10V
Power Dissipation (Max): 3.3W (Ta), 68W (Tc)
Vgs(th) (Max) @ Id: 2.3V @ 50µA
Supplier Device Package: DFN5060-8
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 20 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1320 pF @ 25 V
Qualification: AEC-Q101
Produkt ist nicht verfügbar
 Mindestbestellmenge: 3000 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
PJQ5546V-AU_R2_002A1PanjitMOSFETs 40V N-Channel Enhancement Mode MOSFET
auf Bestellung 2677 Stücke:
Lieferzeit 10-14 Tag (e)
2+2.2 EUR
10+1.37 EUR
100+0.9 EUR
500+0.88 EUR
1000+0.84 EUR
3000+0.77 EUR
Mindestbestellmenge: 2 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
PJQ5546V-AU_R2_002A1Panjit International Inc.Description: 40V N-CHANNEL ENHANCEMENT MODE M
Packaging: Cut Tape (CT)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 17.7A (Ta), 79A (Tc)
Rds On (Max) @ Id, Vgs: 5.9mOhm @ 20A, 10V
Power Dissipation (Max): 3.3W (Ta), 65W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 50µA
Supplier Device Package: DFN5060-8
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 7V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 23 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1283 pF @ 25 V
Qualification: AEC-Q101
auf Bestellung 2975 Stücke:
Lieferzeit 10-14 Tag (e)
9+2.56 EUR
13+1.71 EUR
100+1.19 EUR
500+1 EUR
1000+0.92 EUR
Mindestbestellmenge: 9 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
PJQ5546V-AU_R2_002A1PanJit SemiconductorCategory: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 79A; Idm: 316A; 65W; DFN5060-8
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 79A
Pulsed drain current: 316A
Power dissipation: 65W
Case: DFN5060-8
Gate-source voltage: ±20V
On-state resistance: 7.3mΩ
Mounting: SMD
Gate charge: 23nC
Kind of package: reel; tape
Kind of channel: enhancement
Application: automotive industry
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
PJQ5546V-AU_R2_002A1Panjit International Inc.Description: 40V N-CHANNEL ENHANCEMENT MODE M
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 17.7A (Ta), 79A (Tc)
Rds On (Max) @ Id, Vgs: 5.9mOhm @ 20A, 10V
Power Dissipation (Max): 3.3W (Ta), 65W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 50µA
Supplier Device Package: DFN5060-8
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 7V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 23 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1283 pF @ 25 V
Qualification: AEC-Q101
Produkt ist nicht verfügbar
 Mindestbestellmenge: 3000 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
PJQ5548-AU_R2_002A1Panjit International Inc.Description: 40V N-CHANNEL ENHANCEMENT MODE M
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 14.5A (Ta), 48A (Tc)
Rds On (Max) @ Id, Vgs: 8.8mOhm @ 20A, 10V
Power Dissipation (Max): 3.3W (Ta), 36W (Tc)
Vgs(th) (Max) @ Id: 2.3V @ 50µA
Supplier Device Package: DFN5060-8
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 13 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 778 pF @ 25 V
Qualification: AEC-Q101
Produkt ist nicht verfügbar
 Mindestbestellmenge: 3000 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
PJQ5548-AU_R2_002A1Panjit International Inc.Description: 40V N-CHANNEL ENHANCEMENT MODE M
Packaging: Cut Tape (CT)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 14.5A (Ta), 48A (Tc)
Rds On (Max) @ Id, Vgs: 8.8mOhm @ 20A, 10V
Power Dissipation (Max): 3.3W (Ta), 36W (Tc)
Vgs(th) (Max) @ Id: 2.3V @ 50µA
Supplier Device Package: DFN5060-8
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 13 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 778 pF @ 25 V
Qualification: AEC-Q101
auf Bestellung 2775 Stücke:
Lieferzeit 10-14 Tag (e)
10+2.23 EUR
15+1.46 EUR
100+0.99 EUR
500+0.81 EUR
1000+0.74 EUR
Mindestbestellmenge: 10 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
PJQ5548-AU_R2_002A1PanjitMOSFET 40V N-Channel Enhancement Mode MOSFET
auf Bestellung 2690 Stücke:
Lieferzeit 10-14 Tag (e)
3+1.62 EUR
10+1.43 EUR
100+0.98 EUR
500+0.81 EUR
1000+0.71 EUR
3000+0.61 EUR
6000+0.58 EUR
Mindestbestellmenge: 3 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
PJQ5548V-AU_R2_002A1Panjit International Inc.Description: 40V N-CHANNEL ENHANCEMENT MODE M
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 13.6A (Ta), 45A (Tc)
Rds On (Max) @ Id, Vgs: 10mOhm @ 20A, 10V
Power Dissipation (Max): 3.3W (Ta), 36W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 50µA
Supplier Device Package: DFN5060-8
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 7V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 9.5 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 673 pF @ 25 V
Qualification: AEC-Q101
auf Bestellung 3000 Stücke:
Lieferzeit 10-14 Tag (e)
3000+0.57 EUR
Mindestbestellmenge: 3000 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
PJQ5548V-AU_R2_002A1PanjitMOSFETs 40V N-Channel Enhancement Mode MOSFET
auf Bestellung 2856 Stücke:
Lieferzeit 10-14 Tag (e)
2+2.89 EUR
10+1.78 EUR
100+1.18 EUR
500+0.92 EUR
1000+0.79 EUR
3000+0.6 EUR
Mindestbestellmenge: 2 Stücke
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PJQ5548V-AU_R2_002A1Panjit International Inc.Description: 40V N-CHANNEL ENHANCEMENT MODE M
Packaging: Cut Tape (CT)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 13.6A (Ta), 45A (Tc)
Rds On (Max) @ Id, Vgs: 10mOhm @ 20A, 10V
Power Dissipation (Max): 3.3W (Ta), 36W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 50µA
Supplier Device Package: DFN5060-8
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 7V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 9.5 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 673 pF @ 25 V
Qualification: AEC-Q101
auf Bestellung 3000 Stücke:
Lieferzeit 10-14 Tag (e)
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PJQ5560A-AU_R2_002A1PanjitMOSFETs 60V N-Channel Enhancement Mode MOSFET
Produkt ist nicht verfügbar
 Mindestbestellmenge: 3000 Stücke
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PJQ5562A-AU_R2_002A1Panjit International Inc.Description: 60V N-CHANNEL ENHANCEMENT MODE M
Packaging: Cut Tape (CT)
auf Bestellung 3000 Stücke:
Lieferzeit 10-14 Tag (e)
7+3.45 EUR
10+2.33 EUR
100+1.65 EUR
500+1.34 EUR
1000+1.25 EUR
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PJQ5562A-AU_R2_002A1Panjit International Inc.Description: 60V N-CHANNEL ENHANCEMENT MODE M
Packaging: Tape & Reel (TR)
auf Bestellung 3000 Stücke:
Lieferzeit 10-14 Tag (e)
3000+1.17 EUR
Mindestbestellmenge: 3000 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
PJQ5562A-AU_R2_002A1PanjitMOSFETs 60V N-Channel Enhancement Mode MOSFET
Produkt ist nicht verfügbar
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PJQ5562A_R2_00201PanjitMOSFETs
Produkt ist nicht verfügbar
 Mindestbestellmenge: 3000 Stücke
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PJQ5562A_R2_00201Panjit International Inc.Description: 60V N-CHANNEL ENHANCEMENT MODE M
Packaging: Cut Tape (CT)
auf Bestellung 3000 Stücke:
Lieferzeit 10-14 Tag (e)
8+2.73 EUR
12+1.84 EUR
100+1.29 EUR
500+1.05 EUR
1000+0.96 EUR
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PJQ5562A_R2_00201Panjit International Inc.Description: 60V N-CHANNEL ENHANCEMENT MODE M
Packaging: Tape & Reel (TR)
auf Bestellung 3000 Stücke:
Lieferzeit 10-14 Tag (e)
3000+0.86 EUR
Mindestbestellmenge: 3000 Stücke
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PJQ5564A-AU_R2_002A1Panjit International Inc.Description: 60V N-CHANNEL ENHANCEMENT MODE M
Packaging: Cut Tape (CT)
auf Bestellung 3000 Stücke:
Lieferzeit 10-14 Tag (e)
8+2.98 EUR
11+2.01 EUR
100+1.42 EUR
500+1.14 EUR
1000+1.06 EUR
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PJQ5564A-AU_R2_002A1Panjit International Inc.Description: 60V N-CHANNEL ENHANCEMENT MODE M
Packaging: Tape & Reel (TR)
auf Bestellung 3000 Stücke:
Lieferzeit 10-14 Tag (e)
3000+0.95 EUR
Mindestbestellmenge: 3000 Stücke
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PJQ5568A-AU_R2_002A1Panjit International Inc.Description: 60V N-CHANNEL ENHANCEMENT MODE M
Packaging: Cut Tape (CT)
auf Bestellung 3000 Stücke:
Lieferzeit 10-14 Tag (e)
9+2.48 EUR
13+1.67 EUR
100+1.17 EUR
500+0.94 EUR
1000+0.87 EUR
Mindestbestellmenge: 9 Stücke
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PJQ5568A-AU_R2_002A1PanjitMOSFETs 60V N-Channel Enhancement Mode MOSFET
auf Bestellung 3000 Stücke:
Lieferzeit 10-14 Tag (e)
1+4.5 EUR
10+2.89 EUR
100+1.96 EUR
500+1.63 EUR
1000+1.51 EUR
3000+1.29 EUR
Im Einkaufswagen  Stück im Wert von  UAH
PJQ5568A-AU_R2_002A1Panjit International Inc.Description: 60V N-CHANNEL ENHANCEMENT MODE M
Packaging: Tape & Reel (TR)
auf Bestellung 3000 Stücke:
Lieferzeit 10-14 Tag (e)
3000+0.75 EUR
Mindestbestellmenge: 3000 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
PJQ5572A-AU_R2_002A1Panjit International Inc.Description: 100V N-CHANNEL ENHANCEMENT MODE
Packaging: Tape & Reel (TR)
auf Bestellung 3000 Stücke:
Lieferzeit 10-14 Tag (e)
3000+1.54 EUR
Mindestbestellmenge: 3000 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
PJQ5572A-AU_R2_002A1Panjit International Inc.Description: 100V N-CHANNEL ENHANCEMENT MODE
Packaging: Cut Tape (CT)
auf Bestellung 3000 Stücke:
Lieferzeit 10-14 Tag (e)
5+4.27 EUR
10+2.92 EUR
100+2.08 EUR
500+1.71 EUR
1000+1.59 EUR
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PJQ5574A-AU_R2_002A1Panjit International Inc.Description: 100V N-CHANNEL ENHANCEMENT MODE
Packaging: Tape & Reel (TR)
auf Bestellung 3000 Stücke:
Lieferzeit 10-14 Tag (e)
3000+1.2 EUR
Mindestbestellmenge: 3000 Stücke
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PJQ5574A-AU_R2_002A1Panjit International Inc.Description: 100V N-CHANNEL ENHANCEMENT MODE
Packaging: Cut Tape (CT)
auf Bestellung 3000 Stücke:
Lieferzeit 10-14 Tag (e)
6+3.52 EUR
10+2.39 EUR
100+1.69 EUR
500+1.38 EUR
1000+1.29 EUR
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PJQ5576A-AU_R2_002A1Panjit International Inc.Description: 100V N-CHANNEL ENHANCEMENT MODE
Packaging: Cut Tape (CT)
auf Bestellung 2800 Stücke:
Lieferzeit 10-14 Tag (e)
8+2.98 EUR
11+2.01 EUR
100+1.42 EUR
500+1.14 EUR
1000+1.06 EUR
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PJQ5576A-AU_R2_002A1Panjit International Inc.Description: 100V N-CHANNEL ENHANCEMENT MODE
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar
 Mindestbestellmenge: 3000 Stücke
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PJQ5592-AU_R2_002A1PanjitMOSFETs 150V N-Channel Enhancement Mode MOSFET
auf Bestellung 2579 Stücke:
Lieferzeit 10-14 Tag (e)
1+5.55 EUR
10+3.61 EUR
100+2.64 EUR
500+2.23 EUR
1000+2.07 EUR
3000+1.75 EUR
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PJQ5594-AU_R2_002A1Panjit International Inc.Description: 150V N-CHANNEL ENHANCEMENT MODE
Packaging: Cut Tape (CT)
auf Bestellung 3000 Stücke:
Lieferzeit 10-14 Tag (e)
7+3.28 EUR
10+2.23 EUR
100+1.57 EUR
500+1.29 EUR
1000+1.19 EUR
Mindestbestellmenge: 7 Stücke
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PJQ5594-AU_R2_002A1Panjit International Inc.Description: 150V N-CHANNEL ENHANCEMENT MODE
Packaging: Tape & Reel (TR)
auf Bestellung 3000 Stücke:
Lieferzeit 10-14 Tag (e)
3000+1.09 EUR
Mindestbestellmenge: 3000 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
PJQ5594-AU_R2_002A1PanjitMOSFETs 150V N-Channel Enhancement Mode MOSFET
auf Bestellung 2824 Stücke:
Lieferzeit 10-14 Tag (e)
1+4.11 EUR
10+2.64 EUR
100+1.77 EUR
500+1.42 EUR
1000+1.3 EUR
3000+1.18 EUR
Im Einkaufswagen  Stück im Wert von  UAH
PJQ5606-R2-00001PanjitMOSFETs
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
PJQ5606_R2_00001PanjitMOSFET PJ/Q5606/TR/13"/HF/3K/DFN5060B-8L/MOS/DFN/NFET-30FKNP//PJ/DFN5060B8L-AS04/PJQ5606-ASN3/DFN50608L-AS01
Produkt ist nicht verfügbar
 Mindestbestellmenge: 3000 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
PJQ5606_R2_00001Panjit International Inc.Description: MOSFET N/P-CH 30V 7A 8DFN
Supplier Device Package: DFN5060B-8
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 4.8nC @ 4.5V, 7.8nC @ 4.5V
Rds On (Max) @ Id, Vgs: 19mOhm @ 8A, 10V, 30mOhm @ 4A, 10V
Input Capacitance (Ciss) (Max) @ Vds: 429pF @ 25V, 846pF @ 15V
Current - Continuous Drain (Id) @ 25°C: 7A (Ta), 25A (Tc), 6.1A (Ta), 22A (Tc)
Drain to Source Voltage (Vdss): 30V
Power - Max: 1.7W (Ta), 21W (Tc)
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Configuration: N and P-Channel Complementary
Mounting Type: Surface Mount
Package / Case: 8-PowerTDFN
Packaging: Cut Tape (CT)
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
PJQ5606_R2_00001Panjit International Inc.Description: MOSFET N/P-CH 30V 7A 8DFN
Operating Temperature: -55°C ~ 150°C (TJ)
Configuration: N and P-Channel Complementary
Mounting Type: Surface Mount
Package / Case: 8-PowerTDFN
Packaging: Tape & Reel (TR)
Supplier Device Package: DFN5060B-8
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 4.8nC @ 4.5V, 7.8nC @ 4.5V
Rds On (Max) @ Id, Vgs: 19mOhm @ 8A, 10V, 30mOhm @ 4A, 10V
Input Capacitance (Ciss) (Max) @ Vds: 429pF @ 25V, 846pF @ 15V
Current - Continuous Drain (Id) @ 25°C: 7A (Ta), 25A (Tc), 6.1A (Ta), 22A (Tc)
Drain to Source Voltage (Vdss): 30V
Power - Max: 1.7W (Ta), 21W (Tc)
Technology: MOSFET (Metal Oxide)
Produkt ist nicht verfügbar
 Mindestbestellmenge: 3000 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
PJQ5839E-AU_R2_002A1Panjit International Inc.Description: MOSFET 2P-CH 30V 9A 8DFN
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Configuration: 2 P-Channel (Dual)
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 2.5W (Ta), 30W (Tc)
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 9A (Ta), 31A (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 1012pF @ 25V
Rds On (Max) @ Id, Vgs: 19.1mOhm @ 10A, 10V
Gate Charge (Qg) (Max) @ Vgs: 22nC @ 10V
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: DFN5060B-8
Grade: Automotive
Qualification: AEC-Q101
auf Bestellung 3000 Stücke:
Lieferzeit 10-14 Tag (e)
3000+0.55 EUR
Mindestbestellmenge: 3000 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
PJQ5839E-AU_R2_002A1PanjitMOSFETs 30V Dual P-Channel Enhancement Mode MOSFET
auf Bestellung 2925 Stücke:
Lieferzeit 10-14 Tag (e)
2+2.23 EUR
10+1.38 EUR
100+1.24 EUR
Mindestbestellmenge: 2 Stücke
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PJQ5839E-AU_R2_002A1Panjit International Inc.Description: MOSFET 2P-CH 30V 9A 8DFN
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Configuration: 2 P-Channel (Dual)
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 2.5W (Ta), 30W (Tc)
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 9A (Ta), 31A (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 1012pF @ 25V
Rds On (Max) @ Id, Vgs: 19.1mOhm @ 10A, 10V
Gate Charge (Qg) (Max) @ Vgs: 22nC @ 10V
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: DFN5060B-8
Grade: Automotive
Qualification: AEC-Q101
auf Bestellung 3130 Stücke:
Lieferzeit 10-14 Tag (e)
10+2.2 EUR
16+1.38 EUR
100+0.9 EUR
500+0.7 EUR
1000+0.63 EUR
Mindestbestellmenge: 10 Stücke
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PJQ5844-AU_R2_000A1Panjit International Inc.Description: MOSFET 2N-CH 40V 10A/45A 8DFN
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 2W (Ta), 38.5W (Tc)
Drain to Source Voltage (Vdss): 40V
Current - Continuous Drain (Id) @ 25°C: 10A (Ta), 45A (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 1759pF @ 25V
Rds On (Max) @ Id, Vgs: 8mOhm @ 15A, 10V
Gate Charge (Qg) (Max) @ Vgs: 17nC @ 4.5V
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: DFN5060B-8
Produkt ist nicht verfügbar
 Mindestbestellmenge: 3000 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
PJQ5844-AU_R2_000A1Panjit International Inc.Description: MOSFET 2N-CH 40V 10A/45A 8DFN
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 2W (Ta), 38.5W (Tc)
Drain to Source Voltage (Vdss): 40V
Current - Continuous Drain (Id) @ 25°C: 10A (Ta), 45A (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 1759pF @ 25V
Rds On (Max) @ Id, Vgs: 8mOhm @ 15A, 10V
Gate Charge (Qg) (Max) @ Vgs: 17nC @ 4.5V
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: DFN5060B-8
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
PJQ5844_R2_00001Panjit International Inc.Description: MOSFET 2N-CH 40V 10A 8DFN
Supplier Device Package: DFN5060B-8
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 17nC @ 4.5V
Rds On (Max) @ Id, Vgs: 8mOhm @ 15A, 10V
Input Capacitance (Ciss) (Max) @ Vds: 1759pF @ 25V
Current - Continuous Drain (Id) @ 25°C: 10A (Ta), 45A (Tc)
Drain to Source Voltage (Vdss): 40V
Power - Max: 1.7W (Ta), 32W (Tc)
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Configuration: 2 N-Channel (Dual)
Mounting Type: Surface Mount
Package / Case: 8-PowerTDFN
Packaging: Cut Tape (CT)
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
PJQ5844_R2_00001Panjit International Inc.Description: MOSFET 2N-CH 40V 10A 8DFN
Supplier Device Package: DFN5060B-8
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 17nC @ 4.5V
Rds On (Max) @ Id, Vgs: 8mOhm @ 15A, 10V
Input Capacitance (Ciss) (Max) @ Vds: 1759pF @ 25V
Current - Continuous Drain (Id) @ 25°C: 10A (Ta), 45A (Tc)
Drain to Source Voltage (Vdss): 40V
Power - Max: 1.7W (Ta), 32W (Tc)
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Configuration: 2 N-Channel (Dual)
Mounting Type: Surface Mount
Package / Case: 8-PowerTDFN
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar
 Mindestbestellmenge: 3000 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
PJQ5846-AU_R2_000A1PanjitMOSFET 40V N-Channel Enhancement Mode MOSFET
Produkt ist nicht verfügbar
 Mindestbestellmenge: 3000 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
PJQ5846_R2_00001PanjitMOSFET 40V N-Channel Enhancement Mode MOSFET
Produkt ist nicht verfügbar
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Im Einkaufswagen  Stück im Wert von  UAH
PJQ5848_R2_00001PanjitMOSFET PJ/Q5848/TR/13"/HF/3K/DFN5060B-8L/MOS/DFN/NFET-40FKMN//PJ/DFN5060B8L-AS07/PJQ5848-ASP3/DFN50608L-AS01
Produkt ist nicht verfügbar
 Mindestbestellmenge: 3000 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
PJQ5850-AU_R2_000A1PanjitMOSFETs 40V Dual N-Channel Enhancement Mode MOSFET
Produkt ist nicht verfügbar
 Mindestbestellmenge: 2 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
PJQ5850_R2_00001Panjit International Inc.Description: MOSFET 2N-CH 40V 5A 8DFN
Operating Temperature: -55°C ~ 150°C (TJ)
Configuration: 2 N-Channel (Dual)
Mounting Type: Surface Mount
Package / Case: 8-PowerTDFN
Packaging: Tape & Reel (TR)
Supplier Device Package: DFN5060B-8
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 4.4nC @ 4.5V
Rds On (Max) @ Id, Vgs: 33mOhm @ 8A, 10V
Input Capacitance (Ciss) (Max) @ Vds: 425pF @ 25V
Current - Continuous Drain (Id) @ 25°C: 5A (Ta), 14A (Tc)
Drain to Source Voltage (Vdss): 40V
Power - Max: 1.7W (Ta), 12W (Tc)
Technology: MOSFET (Metal Oxide)
Produkt ist nicht verfügbar
 Mindestbestellmenge: 3000 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
PJQ5866A-AU_R2_000A1Panjit International Inc.Description: 60V DUAL N-CHANNEL ENHANCEMENT M
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 2W (Ta), 68.2W (Tc)
Drain to Source Voltage (Vdss): 60V
Current - Continuous Drain (Id) @ 25°C: 7A (Ta), 40A (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 1574pF @ 25V
Rds On (Max) @ Id, Vgs: 17mOhm @ 20A, 10V
Gate Charge (Qg) (Max) @ Vgs: 13.5nC @ 4.5V
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: DFN5060B-8
Grade: Automotive
Part Status: Active
Qualification: AEC-Q101
auf Bestellung 3000 Stücke:
Lieferzeit 10-14 Tag (e)
3000+0.75 EUR
Mindestbestellmenge: 3000 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
PJQ5866A-AU_R2_000A1Panjit International Inc.Description: 60V DUAL N-CHANNEL ENHANCEMENT M
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 2W (Ta), 68.2W (Tc)
Drain to Source Voltage (Vdss): 60V
Current - Continuous Drain (Id) @ 25°C: 7A (Ta), 40A (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 1574pF @ 25V
Rds On (Max) @ Id, Vgs: 17mOhm @ 20A, 10V
Gate Charge (Qg) (Max) @ Vgs: 13.5nC @ 4.5V
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: DFN5060B-8
Grade: Automotive
Part Status: Active
Qualification: AEC-Q101
auf Bestellung 5428 Stücke:
Lieferzeit 10-14 Tag (e)
12+1.82 EUR
15+1.48 EUR
100+1.15 EUR
500+0.98 EUR
1000+0.8 EUR
Mindestbestellmenge: 12 Stücke
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PJQ5866A_R2_00001Panjit International Inc.Description: 60V DUAL N-CHANNEL ENHANCEMENT M
Part Status: Active
Supplier Device Package: DFN5060B-8
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 13.5nC @ 4.5V
Rds On (Max) @ Id, Vgs: 17mOhm @ 20A, 10V
Input Capacitance (Ciss) (Max) @ Vds: 1574pF @ 25V
Current - Continuous Drain (Id) @ 25°C: 7A (Ta), 40A (Tc)
Drain to Source Voltage (Vdss): 60V
Power - Max: 1.7W (Ta), 56W (Tc)
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Configuration: 2 N-Channel (Dual)
Mounting Type: Surface Mount
Package / Case: 8-PowerTDFN
Packaging: Cut Tape (CT)
auf Bestellung 2728 Stücke:
Lieferzeit 10-14 Tag (e)
13+1.63 EUR
16+1.34 EUR
100+1.05 EUR
500+0.88 EUR
1000+0.73 EUR
Mindestbestellmenge: 13 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
PJQ5866A_R2_00001Panjit International Inc.Description: 60V DUAL N-CHANNEL ENHANCEMENT M
Part Status: Active
Supplier Device Package: DFN5060B-8
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 13.5nC @ 4.5V
Rds On (Max) @ Id, Vgs: 17mOhm @ 20A, 10V
Input Capacitance (Ciss) (Max) @ Vds: 1574pF @ 25V
Current - Continuous Drain (Id) @ 25°C: 7A (Ta), 40A (Tc)
Drain to Source Voltage (Vdss): 60V
Power - Max: 1.7W (Ta), 56W (Tc)
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Configuration: 2 N-Channel (Dual)
Mounting Type: Surface Mount
Package / Case: 8-PowerTDFN
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar
 Mindestbestellmenge: 3000 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
PJQ5944S6V-AU_R2_002A1Panjit International Inc.Description: 40V N-CHANNEL ENHANCEMENT MODE M
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Configuration: 2 N-Channel
Operating Temperature: -55°C ~ 175°C
Technology: MOSFET (Metal Oxide)
Power - Max: 2.5W (Ta), 65W (Tc)
Drain to Source Voltage (Vdss): 40V
Current - Continuous Drain (Id) @ 25°C: 16A (Ta), 80A (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 1650pF @ 25V
Rds On (Max) @ Id, Vgs: 5.3mOhm @ 10A, 10V
Gate Charge (Qg) (Max) @ Vgs: 24nC @ 10V
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: DFN5060B-8
Grade: Automotive
Qualification: AEC-Q101
auf Bestellung 3000 Stücke:
Lieferzeit 10-14 Tag (e)
7+3 EUR
12+1.89 EUR
100+1.26 EUR
500+0.99 EUR
1000+0.9 EUR
Mindestbestellmenge: 7 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
PJQ5944S6V-AU_R2_002A1Panjit International Inc.Description: 40V N-CHANNEL ENHANCEMENT MODE M
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Configuration: 2 N-Channel
Operating Temperature: -55°C ~ 175°C
Technology: MOSFET (Metal Oxide)
Power - Max: 2.5W (Ta), 65W (Tc)
Drain to Source Voltage (Vdss): 40V
Current - Continuous Drain (Id) @ 25°C: 16A (Ta), 80A (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 1650pF @ 25V
Rds On (Max) @ Id, Vgs: 5.3mOhm @ 10A, 10V
Gate Charge (Qg) (Max) @ Vgs: 24nC @ 10V
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: DFN5060B-8
Grade: Automotive
Qualification: AEC-Q101
auf Bestellung 3000 Stücke:
Lieferzeit 10-14 Tag (e)
3000+0.79 EUR
Mindestbestellmenge: 3000 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
PJQ5948-AU_R2_002A1Panjit International Inc.Description: MOSFET 2N-CH 40V 10.6A 8DFN
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Configuration: 2 N-Channel
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 2.5W (Ta), 30W (Tc)
Drain to Source Voltage (Vdss): 40V
Current - Continuous Drain (Id) @ 25°C: 10.6A (Ta), 37A (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 778pF @ 25V
Rds On (Max) @ Id, Vgs: 12.3mOhm @ 10A, 10V
Gate Charge (Qg) (Max) @ Vgs: 13nC @ 10V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 2.3V @ 50µA
Supplier Device Package: DFN5060B-8
Grade: Automotive
Part Status: Active
Qualification: AEC-Q101
auf Bestellung 1976 Stücke:
Lieferzeit 10-14 Tag (e)
10+2.15 EUR
12+1.77 EUR
100+1.38 EUR
500+1.17 EUR
1000+0.95 EUR
Mindestbestellmenge: 10 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
PJQ5948-AU_R2_002A1PanjitMOSFETs 40V Dual N-Channel Enhancement Mode MOSFET
auf Bestellung 2348 Stücke:
Lieferzeit 10-14 Tag (e)
2+3.09 EUR
10+1.96 EUR
100+1.26 EUR
500+1 EUR
1000+0.92 EUR
3000+0.8 EUR
Mindestbestellmenge: 2 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
PJQ5948-AU_R2_002A1Panjit International Inc.Description: MOSFET 2N-CH 40V 10.6A 8DFN
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Configuration: 2 N-Channel
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 2.5W (Ta), 30W (Tc)
Drain to Source Voltage (Vdss): 40V
Current - Continuous Drain (Id) @ 25°C: 10.6A (Ta), 37A (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 778pF @ 25V
Rds On (Max) @ Id, Vgs: 12.3mOhm @ 10A, 10V
Gate Charge (Qg) (Max) @ Vgs: 13nC @ 10V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 2.3V @ 50µA
Supplier Device Package: DFN5060B-8
Grade: Automotive
Part Status: Active
Qualification: AEC-Q101
Produkt ist nicht verfügbar
 Mindestbestellmenge: 3000 Stücke
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PJQ5948V-AU_R2_002A1Panjit International Inc.Description: MOSFET 2N-CH 40V 10.5A 8DFN
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Configuration: 2 N-Channel
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 2.4W (Ta), 32W (Tc)
Drain to Source Voltage (Vdss): 40V
Current - Continuous Drain (Id) @ 25°C: 10.5A (Ta), 35A (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 673pF @ 25V
Rds On (Max) @ Id, Vgs: 13.4mOhm @ 10A, 10V
Gate Charge (Qg) (Max) @ Vgs: 9.5nC @ 10V
FET Feature: Standard
Vgs(th) (Max) @ Id: 3.5V @ 50µA
Supplier Device Package: DFN5060B-8
Grade: Automotive
Qualification: AEC-Q101
auf Bestellung 3000 Stücke:
Lieferzeit 10-14 Tag (e)
3000+0.95 EUR
Mindestbestellmenge: 3000 Stücke
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PJQ5948V-AU_R2_002A1PanjitMOSFETs 40V Dual N-Channel Enhancement Mode MOSFET
auf Bestellung 2874 Stücke:
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2+2.48 EUR
10+1.55 EUR
100+1.02 EUR
500+0.94 EUR
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PJQ5948V-AU_R2_002A1Panjit International Inc.Description: MOSFET 2N-CH 40V 10.5A 8DFN
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Configuration: 2 N-Channel
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 2.4W (Ta), 32W (Tc)
Drain to Source Voltage (Vdss): 40V
Current - Continuous Drain (Id) @ 25°C: 10.5A (Ta), 35A (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 673pF @ 25V
Rds On (Max) @ Id, Vgs: 13.4mOhm @ 10A, 10V
Gate Charge (Qg) (Max) @ Vgs: 9.5nC @ 10V
FET Feature: Standard
Vgs(th) (Max) @ Id: 3.5V @ 50µA
Supplier Device Package: DFN5060B-8
Grade: Automotive
Qualification: AEC-Q101
auf Bestellung 3000 Stücke:
Lieferzeit 10-14 Tag (e)
10+2.31 EUR
12+1.88 EUR
100+1.46 EUR
500+1.24 EUR
1000+1.01 EUR
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PJQ5968A-AU_R2_002A1Panjit International Inc.Description: 60V N-CHANNEL ENHANCEMENT MODE M
Packaging: Tape & Reel (TR)
auf Bestellung 3000 Stücke:
Lieferzeit 10-14 Tag (e)
3000+1.14 EUR
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PJQ5968A-AU_R2_002A1Panjit International Inc.Description: 60V N-CHANNEL ENHANCEMENT MODE M
Packaging: Cut Tape (CT)
auf Bestellung 3000 Stücke:
Lieferzeit 10-14 Tag (e)
5+4.27 EUR
10+2.73 EUR
100+1.84 EUR
500+1.48 EUR
1000+1.36 EUR
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