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BUK653R5-55CNXP USA Inc.Description: N-CHANNEL POWER MOSFET
Produkt ist nicht verfügbar
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BUK653R5-55C,127NXP USA Inc.Description: MOSFET N-CH 55V 120A TO220AB
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 120A (Tc)
Rds On (Max) @ Id, Vgs: 3.9mOhm @ 25A, 10V
Power Dissipation (Max): 263W (Tc)
Vgs(th) (Max) @ Id: 2.8V @ 1mA
Supplier Device Package: TO-220AB
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±16V
Drain to Source Voltage (Vdss): 55 V
Gate Charge (Qg) (Max) @ Vgs: 191 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 11516 pF @ 25 V
auf Bestellung 4916 Stücke:
Lieferzeit 10-14 Tag (e)
290+2.02 EUR
Mindestbestellmenge: 290 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
BUK653R5-55C,127NXP USA Inc.Description: MOSFET N-CH 55V 120A TO220AB
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 120A (Tc)
Rds On (Max) @ Id, Vgs: 3.9mOhm @ 25A, 10V
Power Dissipation (Max): 263W (Tc)
Vgs(th) (Max) @ Id: 2.8V @ 1mA
Supplier Device Package: TO-220AB
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±16V
Drain to Source Voltage (Vdss): 55 V
Gate Charge (Qg) (Max) @ Vgs: 191 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 11516 pF @ 25 V
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
BUK653R7-30C,127NXP USA Inc.Description: MOSFET N-CH 30V 100A TO220AB
Rds On (Max) @ Id, Vgs: 3.9mOhm @ 25A, 10V
Current - Continuous Drain (Id) @ 25°C: 100A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-220-3
Packaging: Tube
Input Capacitance (Ciss) (Max) @ Vds: 4707 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 78 nC @ 10 V
Drain to Source Voltage (Vdss): 30 V
Vgs (Max): ±16V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Supplier Device Package: TO-220AB
Vgs(th) (Max) @ Id: 2.8V @ 1mA
Power Dissipation (Max): 158W (Tc)
auf Bestellung 5180 Stücke:
Lieferzeit 10-14 Tag (e)
503+1.17 EUR
Mindestbestellmenge: 503 Stücke
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BUK654R0-75C,127NXP USA Inc.Description: MOSFET N-CH 75V 120A TO220AB
auf Bestellung 3883 Stücke:
Lieferzeit 10-14 Tag (e)
226+2.69 EUR
Mindestbestellmenge: 226 Stücke
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BUK654R0-75C,127NXP USA Inc.Description: MOSFET N-CH 75V 120A TO220AB
Produkt ist nicht verfügbar
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BUK654R6-55C,127NXP USA Inc.Description: MOSFET N-CH 55V 100A TO220AB
Produkt ist nicht verfügbar
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BUK654R8-40C,127NXP USA Inc.Description: MOSFET N-CH 40V 100A TO220AB
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 100A (Tc)
Rds On (Max) @ Id, Vgs: 4.8mOhm @ 25A, 10V
Power Dissipation (Max): 158W (Tc)
Vgs(th) (Max) @ Id: 2.8V @ 1mA
Supplier Device Package: TO-220AB
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±16V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 88 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 5200 pF @ 25 V
Qualification: AEC-Q101
auf Bestellung 1963 Stücke:
Lieferzeit 10-14 Tag (e)
398+1.45 EUR
Mindestbestellmenge: 398 Stücke
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BUK655450B
auf Bestellung 2000 Stücke:
Lieferzeit 21-28 Tag (e)
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BUK655500A
auf Bestellung 3000 Stücke:
Lieferzeit 21-28 Tag (e)
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BUK655500ABC
auf Bestellung 22000 Stücke:
Lieferzeit 21-28 Tag (e)
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BUK655500B
auf Bestellung 4000 Stücke:
Lieferzeit 21-28 Tag (e)
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BUK655500C
auf Bestellung 2000 Stücke:
Lieferzeit 21-28 Tag (e)
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BUK655R0-75C,127NXP USA Inc.Description: MOSFET N-CH 75V 120A TO220AB
Produkt ist nicht verfügbar
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BUK657450B
auf Bestellung 6000 Stücke:
Lieferzeit 21-28 Tag (e)
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BUK6607-55CNexperiaNexperia
Produkt ist nicht verfügbar
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BUK6607-55C,118NEXPERIADescription: NEXPERIA - BUK6607-55C,118 - Leistungs-MOSFET, n-Kanal, 55 V, 100 A, 0.0055 ohm, TO-263 (D2PAK), Oberflächenmontage
Transistormontage: Oberflächenmontage
Drain-Source-Spannung Vds: 55
Dauer-Drainstrom Id: 100
Rds(on)-Messspannung Vgs: 10
MSL: MSL 1 - unbegrenzt
Verlustleistung Pd: 158
Bauform - Transistor: TO-263 (D2PAK)
Qualifizierungsstandard der Automobilindustrie: AEC-Q101
Anzahl der Pins: 3
Produktpalette: TrenchMOS
Wandlerpolarität: n-Kanal
Betriebswiderstand, Rds(on): 0.0055
Betriebstemperatur, max.: 175
Schwellenspannung Vgs: 2.3
SVHC: No SVHC (17-Jan-2022)
auf Bestellung 1 Stücke:
Lieferzeit 14-21 Tag (e)
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BUK6607-55C,118Nexperia USA Inc.Description: MOSFET N-CH 55V 100A D2PAK
Power Dissipation (Max): 158W (Tc)
Rds On (Max) @ Id, Vgs: 6.5mOhm @ 25A, 10V
Current - Continuous Drain (Id) @ 25°C: 100A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Packaging: Tape & Reel (TR)
Qualification: AEC-Q101
Grade: Automotive
Input Capacitance (Ciss) (Max) @ Vds: 5160 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 82 nC @ 10 V
Drain to Source Voltage (Vdss): 55 V
Vgs (Max): ±16V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Active
Supplier Device Package: D2PAK
Vgs(th) (Max) @ Id: 2.8V @ 1mA
Produkt ist nicht verfügbar
 Mindestbestellmenge: 800 Stücke
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BUK6607-55C,118NexperiaMOSFET BUK6607-55C/SOT404/D2PAK
auf Bestellung 5091 Stücke:
Lieferzeit 10-14 Tag (e)
1+3.97 EUR
10+3.58 EUR
100+2.89 EUR
500+2.45 EUR
800+2.01 EUR
Im Einkaufswagen  Stück im Wert von  UAH
BUK6607-55C,118NexperiaTrans MOSFET N-CH 55V 100A Automotive 3-Pin(2+Tab) D2PAK T/R
Produkt ist nicht verfügbar
 Mindestbestellmenge: 4800 Stücke
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BUK6607-55C,118NXPMOSFET N-CH 55V 100A D2PAK Транзистори
Produkt ist nicht verfügbar
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BUK6607-55C,118NEXPERIADescription: NEXPERIA - BUK6607-55C,118 - Leistungs-MOSFET, n-Kanal, 55 V, 100 A, 0.0055 ohm, TO-263 (D2PAK), Oberflächenmontage
Verlustleistung: 158
Kanaltyp: n-Kanal
Drain-Source-Durchgangswiderstand: 0.0055
Qualifikation: AEC-Q101
SVHC: No SVHC (10-Jun-2022)
auf Bestellung 1 Stücke:
Lieferzeit 14-21 Tag (e)
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BUK6607-55C,118Nexperia USA Inc.Description: MOSFET N-CH 55V 100A D2PAK
Grade: Automotive
Current - Continuous Drain (Id) @ 25°C: 100A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Packaging: Cut Tape (CT)
Input Capacitance (Ciss) (Max) @ Vds: 5160 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 82 nC @ 10 V
Drain to Source Voltage (Vdss): 55 V
Vgs (Max): ±16V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Active
Supplier Device Package: D2PAK
Vgs(th) (Max) @ Id: 2.8V @ 1mA
Power Dissipation (Max): 158W (Tc)
Rds On (Max) @ Id, Vgs: 6.5mOhm @ 25A, 10V
Qualification: AEC-Q101
Produkt ist nicht verfügbar
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BUK6607-75C,118Nexperia USA Inc.Description: MOSFET N-CH 75V 100A D2PAK
Qualification: AEC-Q101
Input Capacitance (Ciss) (Max) @ Vds: 7600 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 123 nC @ 10 V
Drain to Source Voltage (Vdss): 75 V
Vgs (Max): ±16V
Drive Voltage (Max Rds On, Min Rds On): 10V
Grade: Automotive
Supplier Device Package: D2PAK
Vgs(th) (Max) @ Id: 2.8V @ 1mA
Power Dissipation (Max): 204W (Tc)
Rds On (Max) @ Id, Vgs: 7mOhm @ 25A, 10V
Current - Continuous Drain (Id) @ 25°C: 100A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Packaging: Cut Tape (CT)
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
BUK6607-75C,118Nexperia USA Inc.Description: MOSFET N-CH 75V 100A D2PAK
Qualification: AEC-Q101
Input Capacitance (Ciss) (Max) @ Vds: 7600 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 123 nC @ 10 V
Drain to Source Voltage (Vdss): 75 V
Vgs (Max): ±16V
Drive Voltage (Max Rds On, Min Rds On): 10V
Grade: Automotive
Supplier Device Package: D2PAK
Vgs(th) (Max) @ Id: 2.8V @ 1mA
Power Dissipation (Max): 204W (Tc)
Rds On (Max) @ Id, Vgs: 7mOhm @ 25A, 10V
Current - Continuous Drain (Id) @ 25°C: 100A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar
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BUK6607-75C,118NexperiaMOSFET N-CHAN 75V 100A
auf Bestellung 4813 Stücke:
Lieferzeit 10-14 Tag (e)
Im Einkaufswagen  Stück im Wert von  UAH
BUK6610-75C,118Nexperia USA Inc.Description: NEXPERIA BUK6610 - N-CHANNEL TRE
Packaging: Bulk
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 78A (Tc)
Rds On (Max) @ Id, Vgs: 10mOhm @ 25A, 10V
Power Dissipation (Max): 158W (Tc)
Vgs(th) (Max) @ Id: 2.8V @ 1mA
Supplier Device Package: D2PAK
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±16V
Drain to Source Voltage (Vdss): 75 V
Gate Charge (Qg) (Max) @ Vgs: 81 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 5251 pF @ 25 V
Qualification: AEC-Q101
auf Bestellung 7200 Stücke:
Lieferzeit 10-14 Tag (e)
560+0.99 EUR
Mindestbestellmenge: 560 Stücke
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BUK6610-75C,118Nexperia USA Inc.Description: MOSFET N-CH 75V 78A D2PAK
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 78A (Tc)
Rds On (Max) @ Id, Vgs: 10mOhm @ 25A, 10V
Power Dissipation (Max): 158W (Tc)
Vgs(th) (Max) @ Id: 2.8V @ 1mA
Supplier Device Package: D2PAK
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±16V
Drain to Source Voltage (Vdss): 75 V
Gate Charge (Qg) (Max) @ Vgs: 81 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 5251 pF @ 25 V
Qualification: AEC-Q101
Produkt ist nicht verfügbar
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BUK6610-75C,118NexperiaMOSFET N-CHAN 75V 78A
auf Bestellung 4596 Stücke:
Lieferzeit 10-14 Tag (e)
Im Einkaufswagen  Stück im Wert von  UAH
BUK6610-75C,118Nexperia USA Inc.Description: NEXPERIA BUK6610 - N-CHANNEL TRE
Qualification: AEC-Q101
Grade: Automotive
Input Capacitance (Ciss) (Max) @ Vds: 5251 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 81 nC @ 10 V
Drain to Source Voltage (Vdss): 75 V
Vgs (Max): ±16V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Active
Supplier Device Package: D2PAK
Vgs(th) (Max) @ Id: 2.8V @ 1mA
Power Dissipation (Max): 158W (Tc)
Rds On (Max) @ Id, Vgs: 10mOhm @ 25A, 10V
Current - Continuous Drain (Id) @ 25°C: 78A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Packaging: Bulk
auf Bestellung 7474 Stücke:
Lieferzeit 10-14 Tag (e)
560+0.99 EUR
Mindestbestellmenge: 560 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
BUK6610-75C,118Nexperia USA Inc.Description: MOSFET N-CH 75V 78A D2PAK
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 78A (Tc)
Rds On (Max) @ Id, Vgs: 10mOhm @ 25A, 10V
Power Dissipation (Max): 158W (Tc)
Vgs(th) (Max) @ Id: 2.8V @ 1mA
Supplier Device Package: D2PAK
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±16V
Drain to Source Voltage (Vdss): 75 V
Gate Charge (Qg) (Max) @ Vgs: 81 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 5251 pF @ 25 V
Qualification: AEC-Q101
Produkt ist nicht verfügbar
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BUK661R6-30C,118Nexperia USA Inc.Description: MOSFET N-CH 30V 120A D2PAK
auf Bestellung 11 Stücke:
Lieferzeit 10-14 Tag (e)
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BUK661R6-30C,118Nexperia USA Inc.Description: MOSFET N-CH 30V 120A D2PAK
Produkt ist nicht verfügbar
 Mindestbestellmenge: 4800 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
BUK661R6-30C118NXP USA Inc.Description: N-CHANNEL POWER MOSFET
Input Capacitance (Ciss) (Max) @ Vds: 14964 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 229 nC @ 10 V
Drain to Source Voltage (Vdss): 30 V
Vgs (Max): ±16V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Active
Supplier Device Package: D2PAK
Vgs(th) (Max) @ Id: 2.8V @ 1mA
Power Dissipation (Max): 306W (Tc)
Rds On (Max) @ Id, Vgs: 1.6mOhm @ 25A, 10V
Current - Continuous Drain (Id) @ 25°C: 120A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Packaging: Bulk
auf Bestellung 2741 Stücke:
Lieferzeit 10-14 Tag (e)
370+1.7 EUR
Mindestbestellmenge: 370 Stücke
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BUK661R8-30C,118NexperiaMOSFETs N-CHAN 30V 120A
Produkt ist nicht verfügbar
 Mindestbestellmenge: 800 Stücke
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BUK661R8-30C,118NXP USA Inc.Description: MOSFET N-CH 30V 120A D2PAK
Input Capacitance (Ciss) (Max) @ Vds: 10918 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 168 nC @ 10 V
Drain to Source Voltage (Vdss): 30 V
Vgs (Max): ±16V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Part Status: Active
Supplier Device Package: D2PAK
Vgs(th) (Max) @ Id: 2.8V @ 1mA
Power Dissipation (Max): 263W (Tc)
Rds On (Max) @ Id, Vgs: 1.9mOhm @ 25A, 10V
Current - Continuous Drain (Id) @ 25°C: 120A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Packaging: Bulk
auf Bestellung 1473 Stücke:
Lieferzeit 10-14 Tag (e)
245+2.57 EUR
Mindestbestellmenge: 245 Stücke
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BUK661R9-40C,118Nexperia USA Inc.Description: MOSFET N-CH 40V 120A D2PAK
Qualification: AEC-Q101
Input Capacitance (Ciss) (Max) @ Vds: 15100 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 260 nC @ 10 V
Drain to Source Voltage (Vdss): 40 V
Vgs (Max): ±16V
Drive Voltage (Max Rds On, Min Rds On): 10V
Grade: Automotive
Supplier Device Package: D2PAK
Vgs(th) (Max) @ Id: 2.8V @ 1mA
Power Dissipation (Max): 306W (Tc)
Rds On (Max) @ Id, Vgs: 1.9mOhm @ 25A, 10V
Current - Continuous Drain (Id) @ 25°C: 120A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar
 Mindestbestellmenge: 4800 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
BUK661R9-40C,118NexperiaMOSFET N-CHAN 40V 120A
auf Bestellung 1092 Stücke:
Lieferzeit 10-14 Tag (e)
Im Einkaufswagen  Stück im Wert von  UAH
BUK661R9-40C,118Nexperia USA Inc.Description: MOSFET N-CH 40V 120A D2PAK
Current - Continuous Drain (Id) @ 25°C: 120A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Packaging: Cut Tape (CT)
Qualification: AEC-Q101
Input Capacitance (Ciss) (Max) @ Vds: 15100 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 260 nC @ 10 V
Drain to Source Voltage (Vdss): 40 V
Vgs (Max): ±16V
Drive Voltage (Max Rds On, Min Rds On): 10V
Grade: Automotive
Supplier Device Package: D2PAK
Vgs(th) (Max) @ Id: 2.8V @ 1mA
Power Dissipation (Max): 306W (Tc)
Rds On (Max) @ Id, Vgs: 1.9mOhm @ 25A, 10V
auf Bestellung 1310 Stücke:
Lieferzeit 10-14 Tag (e)
3+7.08 EUR
10+4.89 EUR
100+3.59 EUR
Mindestbestellmenge: 3 Stücke
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BUK662R4-40C,118Nexperia USA Inc.Description: MOSFET N-CH 40V 120A D2PAK
Qualification: AEC-Q101
Grade: Automotive
Input Capacitance (Ciss) (Max) @ Vds: 11334 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 199 nC @ 10 V
Drain to Source Voltage (Vdss): 40 V
Vgs (Max): ±16V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Obsolete
Supplier Device Package: D2PAK
Vgs(th) (Max) @ Id: 2.8V @ 1mA
Power Dissipation (Max): 263W (Tc)
Rds On (Max) @ Id, Vgs: 2.3mOhm @ 25A, 10V
Current - Continuous Drain (Id) @ 25°C: 120A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Packaging: Cut Tape (CT)
Produkt ist nicht verfügbar
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BUK662R4-40C,118NexperiaMOSFET N-CHANNEL TRENCHMOS FET
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BUK662R4-40C,118Nexperia USA Inc.Description: MOSFET N-CH 40V 120A D2PAK
Qualification: AEC-Q101
Grade: Automotive
Input Capacitance (Ciss) (Max) @ Vds: 11334 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 199 nC @ 10 V
Drain to Source Voltage (Vdss): 40 V
Vgs (Max): ±16V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Obsolete
Supplier Device Package: D2PAK
Vgs(th) (Max) @ Id: 2.8V @ 1mA
Power Dissipation (Max): 263W (Tc)
Rds On (Max) @ Id, Vgs: 2.3mOhm @ 25A, 10V
Current - Continuous Drain (Id) @ 25°C: 120A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar
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BUK662R4-40C,118Nexperia USA Inc.Description: MOSFET N-CH 40V 120A D2PAK
Grade: Automotive
Qualification: AEC-Q101
Input Capacitance (Ciss) (Max) @ Vds: 11334 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 199 nC @ 10 V
Drain to Source Voltage (Vdss): 40 V
Vgs (Max): ±16V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Obsolete
Supplier Device Package: D2PAK
Vgs(th) (Max) @ Id: 2.8V @ 1mA
Power Dissipation (Max): 263W (Tc)
Rds On (Max) @ Id, Vgs: 2.3mOhm @ 25A, 10V
Current - Continuous Drain (Id) @ 25°C: 120A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Packaging: Bulk
auf Bestellung 3832 Stücke:
Lieferzeit 10-14 Tag (e)
417+1.39 EUR
Mindestbestellmenge: 417 Stücke
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BUK662R5-30C,118Nexperia USA Inc.Description: MOSFET N-CH 30V 100A D2PAK
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 100A (Tc)
Rds On (Max) @ Id, Vgs: 2.8mOhm @ 25A, 10V
Power Dissipation (Max): 204W (Tc)
Vgs(th) (Max) @ Id: 2.8V @ 1mA
Supplier Device Package: D2PAK
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±16V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 114 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 6960 pF @ 25 V
Qualification: AEC-Q101
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BUK662R5-30C,118-NXPNXP USA Inc.Description: PFET, 100A I(D), 30V, 0.0048OHM,
Input Capacitance (Ciss) (Max) @ Vds: 6960 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 114 nC @ 10 V
Drain to Source Voltage (Vdss): 30 V
Vgs (Max): ±16V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Active
Supplier Device Package: D2PAK
Vgs(th) (Max) @ Id: 2.8V @ 1mA
Power Dissipation (Max): 204W (Tc)
Rds On (Max) @ Id, Vgs: 2.8mOhm @ 25A, 10V
Current - Continuous Drain (Id) @ 25°C: 100A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Packaging: Bulk
Produkt ist nicht verfügbar
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BUK662R7-55CNXP USA Inc.Description: NOW NEXPERIA BUK662R7-55C - POWE
Part Status: Active
Packaging: Bulk
Produkt ist nicht verfügbar
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BUK662R7-55C,118Nexperia USA Inc.Description: MOSFET N-CH 55V 120A D2PAK
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Packaging: Tape & Reel (TR)
Input Capacitance (Ciss) (Max) @ Vds: 15300 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 258 nC @ 10 V
Drain to Source Voltage (Vdss): 55 V
Vgs (Max): ±16V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Obsolete
Supplier Device Package: D2PAK
Vgs(th) (Max) @ Id: 2.8V @ 1mA
Power Dissipation (Max): 306W (Tc)
Rds On (Max) @ Id, Vgs: 2.7mOhm @ 25A, 10V
Current - Continuous Drain (Id) @ 25°C: 120A (Tc)
Produkt ist nicht verfügbar
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BUK662R7-55C,118Nexperia USA Inc.Description: MOSFET N-CH 55V 120A D2PAK
Input Capacitance (Ciss) (Max) @ Vds: 15300 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 258 nC @ 10 V
Drain to Source Voltage (Vdss): 55 V
Vgs (Max): ±16V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Obsolete
Supplier Device Package: D2PAK
Vgs(th) (Max) @ Id: 2.8V @ 1mA
Power Dissipation (Max): 306W (Tc)
Rds On (Max) @ Id, Vgs: 2.7mOhm @ 25A, 10V
Current - Continuous Drain (Id) @ 25°C: 120A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Packaging: Bulk
auf Bestellung 2400 Stücke:
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325+1.93 EUR
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BUK662R7-55C,118Nexperia USA Inc.Description: MOSFET N-CH 55V 120A D2PAK
Input Capacitance (Ciss) (Max) @ Vds: 15300 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 258 nC @ 10 V
Drain to Source Voltage (Vdss): 55 V
Vgs (Max): ±16V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Obsolete
Supplier Device Package: D2PAK
Vgs(th) (Max) @ Id: 2.8V @ 1mA
Power Dissipation (Max): 306W (Tc)
Rds On (Max) @ Id, Vgs: 2.7mOhm @ 25A, 10V
Current - Continuous Drain (Id) @ 25°C: 120A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Packaging: Cut Tape (CT)
Produkt ist nicht verfügbar
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BUK662R7-55C,118NexperiaMOSFET N-CHAN 55V 120A
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BUK663R2-40C,118NexperiaMOSFET N-CHAN 40V 100A
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BUK663R2-40C,118Nexperia USA Inc.Description: NEXPERIA BUK663R2-40C - 100A, 40
Input Capacitance (Ciss) (Max) @ Vds: 8020 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 125 nC @ 10 V
Drain to Source Voltage (Vdss): 40 V
Vgs (Max): ±16V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Active
Supplier Device Package: D2PAK
Vgs(th) (Max) @ Id: 2.8V @ 1mA
Power Dissipation (Max): 204W (Tc)
Rds On (Max) @ Id, Vgs: 3.2mOhm @ 25A, 10V
Current - Continuous Drain (Id) @ 25°C: 100A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Packaging: Bulk
auf Bestellung 14413 Stücke:
Lieferzeit 10-14 Tag (e)
601+1.05 EUR
Mindestbestellmenge: 601 Stücke
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BUK663R5-30C,118Nexperia USA Inc.Description: MOSFET N-CH 30V 100A D2PAK
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 100A (Tc)
Rds On (Max) @ Id, Vgs: 3.5mOhm @ 25A, 10V
Power Dissipation (Max): 158W (Tc)
Vgs(th) (Max) @ Id: 2.8V @ 1mA
Supplier Device Package: D2PAK
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±16V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 78 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4707 pF @ 25 V
Qualification: AEC-Q101
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BUK663R5-30C,118NexperiaMOSFET N-CHAN 30V 100A
Produkt ist nicht verfügbar
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BUK663R5-30C,118Nexperia USA Inc.Description: MOSFET N-CH 30V 100A D2PAK
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 100A (Tc)
Rds On (Max) @ Id, Vgs: 3.5mOhm @ 25A, 10V
Power Dissipation (Max): 158W (Tc)
Vgs(th) (Max) @ Id: 2.8V @ 1mA
Supplier Device Package: D2PAK
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±16V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 78 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4707 pF @ 25 V
Qualification: AEC-Q101
Produkt ist nicht verfügbar
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BUK663R5-55C,118Nexperia USA Inc.Description: MOSFET N-CH 55V 120A D2PAK
Packaging: Cut Tape (CT)
Qualification: AEC-Q101
Input Capacitance (Ciss) (Max) @ Vds: 11516 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 191 nC @ 10 V
Drain to Source Voltage (Vdss): 55 V
Vgs (Max): ±16V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Grade: Automotive
Supplier Device Package: D2PAK
Vgs(th) (Max) @ Id: 2.8V @ 1mA
Power Dissipation (Max): 263W (Tc)
Rds On (Max) @ Id, Vgs: 3.4mOhm @ 25A, 10V
Current - Continuous Drain (Id) @ 25°C: 120A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Produkt ist nicht verfügbar
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BUK663R5-55C,118Nexperia USA Inc.Description: MOSFET N-CH 55V 120A D2PAK
Qualification: AEC-Q101
Input Capacitance (Ciss) (Max) @ Vds: 11516 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 191 nC @ 10 V
Drain to Source Voltage (Vdss): 55 V
Vgs (Max): ±16V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Grade: Automotive
Supplier Device Package: D2PAK
Vgs(th) (Max) @ Id: 2.8V @ 1mA
Power Dissipation (Max): 263W (Tc)
Rds On (Max) @ Id, Vgs: 3.4mOhm @ 25A, 10V
Current - Continuous Drain (Id) @ 25°C: 120A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar
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BUK663R5-55C,118NXP USA Inc.Description: MOSFET N-CH 55V 120A D2PAK
Packaging: Bulk
auf Bestellung 1589 Stücke:
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417+1.4 EUR
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BUK663R7-75CNexperiaMOSFET
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BUK663R7-75C,118NexperiaTrans MOSFET N-CH 75V 120A Automotive 3-Pin(2+Tab) D2PAK T/R
auf Bestellung 4000 Stücke:
Lieferzeit 14-21 Tag (e)
800+2.52 EUR
4000+2.33 EUR
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BUK663R7-75C,118Nexperia USA Inc.Description: MOSFET N-CH 75V 120A D2PAK
Qualification: AEC-Q101
Grade: Automotive
Input Capacitance (Ciss) (Max) @ Vds: 15450 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 234 nC @ 10 V
Drain to Source Voltage (Vdss): 75 V
Vgs (Max): ±16V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Part Status: Obsolete
Supplier Device Package: D2PAK
Vgs(th) (Max) @ Id: 2.8V @ 1mA
Power Dissipation (Max): 306W (Tc)
Rds On (Max) @ Id, Vgs: 4mOhm @ 25A, 10V
Current - Continuous Drain (Id) @ 25°C: 120A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar
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BUK664R4-55C
Produktcode: 175664
zu Favoriten hinzufügen Lieblingsprodukt
Transistoren > MOSFET N-CH
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BUK664R4-55C,118Nexperia USA Inc.Description: MOSFET N-CH 55V 100A D2PAK
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 100A (Tc)
Rds On (Max) @ Id, Vgs: 4.9mOhm @ 25A, 10V
Power Dissipation (Max): 204W (Tc)
Vgs(th) (Max) @ Id: 2.8V @ 1mA
Supplier Device Package: D2PAK
Grade: Automotive
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 5V, 10V
Vgs (Max): ±16V
Drain to Source Voltage (Vdss): 55 V
Gate Charge (Qg) (Max) @ Vgs: 124 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 7750 pF @ 25 V
Qualification: AEC-Q101
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BUK664R4-55C,118NexperiaMOSFET N-CHAN 55V 100A
auf Bestellung 1136 Stücke:
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BUK664R4-55C,118Nexperia USA Inc.Description: MOSFET N-CH 55V 100A D2PAK
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 100A (Tc)
Rds On (Max) @ Id, Vgs: 4.9mOhm @ 25A, 10V
Power Dissipation (Max): 204W (Tc)
Vgs(th) (Max) @ Id: 2.8V @ 1mA
Supplier Device Package: D2PAK
Grade: Automotive
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 5V, 10V
Vgs (Max): ±16V
Drain to Source Voltage (Vdss): 55 V
Gate Charge (Qg) (Max) @ Vgs: 124 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 7750 pF @ 25 V
Qualification: AEC-Q101
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BUK664R6-40C,118Nexperia USA Inc.Description: MOSFET N-CH 40V 100A D2PAK
Qualification: AEC-Q101
Input Capacitance (Ciss) (Max) @ Vds: 5200 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 88 nC @ 10 V
Drain to Source Voltage (Vdss): 40 V
Vgs (Max): ±16V
Drive Voltage (Max Rds On, Min Rds On): 10V
Grade: Automotive
Supplier Device Package: D2PAK
Vgs(th) (Max) @ Id: 2.8V @ 1mA
Power Dissipation (Max): 158W (Tc)
Rds On (Max) @ Id, Vgs: 4.6mOhm @ 25A, 10V
Current - Continuous Drain (Id) @ 25°C: 100A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Packaging: Cut Tape (CT)
Produkt ist nicht verfügbar
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BUK664R6-40C,118Nexperia USA Inc.Description: MOSFET N-CH 40V 100A D2PAK
Packaging: Bulk
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 100A (Tc)
Rds On (Max) @ Id, Vgs: 4.6mOhm @ 25A, 10V
Power Dissipation (Max): 158W (Tc)
Vgs(th) (Max) @ Id: 2.8V @ 1mA
Supplier Device Package: D2PAK
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±16V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 88 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 5200 pF @ 25 V
Qualification: AEC-Q101
auf Bestellung 5181 Stücke:
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BUK664R6-40C,118NexperiaTrans MOSFET N-CH 40V 100A Automotive 3-Pin(2+Tab) D2PAK T/R
Produkt ist nicht verfügbar
 Mindestbestellmenge: 4800 Stücke
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BUK664R6-40C,118Nexperia USA Inc.Description: MOSFET N-CH 40V 100A D2PAK
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 100A (Tc)
Rds On (Max) @ Id, Vgs: 4.6mOhm @ 25A, 10V
Power Dissipation (Max): 158W (Tc)
Vgs(th) (Max) @ Id: 2.8V @ 1mA
Supplier Device Package: D2PAK
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±16V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 88 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 5200 pF @ 25 V
Qualification: AEC-Q101
Produkt ist nicht verfügbar
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BUK664R6-40C,118NexperiaMOSFET N-CHANNEL TRENCHMOS INTERMEDIATE LVL FET
auf Bestellung 4796 Stücke:
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BUK664R8-75C,118NXP USA Inc.Description: MOSFET N-CH 75V 120A D2PAK
auf Bestellung 4672 Stücke:
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 Mindestbestellmenge: 382 Stücke
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BUK664R8-75C,118Nexperia USA Inc.Description: MOSFET N-CH 75V 120A D2PAK
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BUK664R8-75C,118NexperiaMOSFET N-CHANNEL TRENCHMOS FET
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BUK664R8-75C,118Nexperia USA Inc.Description: MOSFET N-CH 75V 120A D2PAK
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BUK6C1R5-40C,118NXP SemiconductorsNXP Semiconductors
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BUK6C2R1-55C,118Nexperia USA Inc.Description: MOSFET N-CH 55V 228A D2PAK
Qualification: AEC-Q101
Grade: Automotive
Input Capacitance (Ciss) (Max) @ Vds: 16000 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 253 nC @ 10 V
Drain to Source Voltage (Vdss): 55 V
Vgs (Max): ±16V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Obsolete
Supplier Device Package: D2PAK-7
Vgs(th) (Max) @ Id: 2.8V @ 1mA
Power Dissipation (Max): 300W (Tc)
Rds On (Max) @ Id, Vgs: 2.3mOhm @ 90A, 10V
Current - Continuous Drain (Id) @ 25°C: 228A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-263-7, D2PAK (6 Leads + Tab)
Packaging: Cut Tape (CT)
Produkt ist nicht verfügbar
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BUK6C2R1-55C,118NexperiaMOSFET N-chan TrenchMOS FET
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BUK6C2R1-55C,118Nexperia USA Inc.Description: MOSFET N-CH 55V 228A D2PAK
Qualification: AEC-Q101
Grade: Automotive
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-263-7, D2PAK (6 Leads + Tab)
Packaging: Tape & Reel (TR)
Input Capacitance (Ciss) (Max) @ Vds: 16000 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 253 nC @ 10 V
Drain to Source Voltage (Vdss): 55 V
Vgs (Max): ±16V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Obsolete
Supplier Device Package: D2PAK-7
Vgs(th) (Max) @ Id: 2.8V @ 1mA
Power Dissipation (Max): 300W (Tc)
Rds On (Max) @ Id, Vgs: 2.3mOhm @ 90A, 10V
Current - Continuous Drain (Id) @ 25°C: 228A (Tc)
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BUK6C2R1-55C,118-NXNXP USA Inc.Description: PFET, 228A I(D), 55V, 0.0037OHM,
Input Capacitance (Ciss) (Max) @ Vds: 16000 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 253 nC @ 10 V
Drain to Source Voltage (Vdss): 55 V
Vgs (Max): ±16V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Active
Supplier Device Package: D2PAK-7
Vgs(th) (Max) @ Id: 2.8V @ 1mA
Power Dissipation (Max): 300W (Tc)
Rds On (Max) @ Id, Vgs: 2.3mOhm @ 90A, 10V
Current - Continuous Drain (Id) @ 25°C: 228A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-263-7, D²Pak (6 Leads + Tab)
Packaging: Bulk
Produkt ist nicht verfügbar
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BUK6C3R3-75C,118NexperiaMOSFET N-chan TrenchMOS FET
auf Bestellung 4545 Stücke:
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BUK6C3R3-75C,118NXP SemiconductorsDescription: NEXPERIA BUK6C3R3 - N-CHANNEL TR
Qualification: AEC-Q101
Input Capacitance (Ciss) (Max) @ Vds: 15800 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 253 nC @ 10 V
Drain to Source Voltage (Vdss): 75 V
Vgs (Max): ±16V
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Packaging: Bulk
Drive Voltage (Max Rds On, Min Rds On): 10V
Grade: Automotive
Supplier Device Package: D2PAK-7
Vgs(th) (Max) @ Id: 2.8V @ 1mA
Power Dissipation (Max): 300W (Tc)
Rds On (Max) @ Id, Vgs: 3.4mOhm @ 90A, 10V
Current - Continuous Drain (Id) @ 25°C: 181A (Tc)
auf Bestellung 480 Stücke:
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189+3.03 EUR
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BUK6D120-40EXNexperia USA Inc.Description: MOSFET N-CH 40V 2.9A/5.7A 6DFN
Qualification: AEC-Q101
Grade: Automotive
Input Capacitance (Ciss) (Max) @ Vds: 113 pF @ 20 V
Gate Charge (Qg) (Max) @ Vgs: 3.6 nC @ 10 V
Drain to Source Voltage (Vdss): 40 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Part Status: Active
Supplier Device Package: DFN2020MD-6
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Power Dissipation (Max): 2W (Ta), 7.5W (Tc)
Rds On (Max) @ Id, Vgs: 120mOhm @ 2.9A, 10V
Current - Continuous Drain (Id) @ 25°C: 2.9A (Ta), 5.7A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: 6-UDFN Exposed Pad
Packaging: Tape & Reel (TR)
auf Bestellung 6000 Stücke:
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3000+0.24 EUR
6000+0.21 EUR
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BUK6D120-40EXNexperia40 V, N-channel Trench MOSFET Automotive AEC-Q101
Produkt ist nicht verfügbar
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BUK6D120-40EXNEXPERIADescription: NEXPERIA - BUK6D120-40EX - Leistungs-MOSFET, n-Kanal, 40 V, 5.7 A, 0.085 ohm, DFN2020MD, Oberflächenmontage
tariffCode: 85412900
Transistormontage: Oberflächenmontage
Drain-Source-Spannung Vds: 40V
rohsCompliant: YES
Dauer-Drainstrom Id: 5.7A
hazardous: false
rohsPhthalatesCompliant: YES
Qualifikation: AEC-Q101
MSL: MSL 1 - unbegrenzt
usEccn: EAR99
Verlustleistung Pd: 7.5W
Gate-Source-Schwellenspannung, max.: 1.6V
euEccn: NLR
Verlustleistung: 7.5W
Bauform - Transistor: DFN2020MD
Qualifizierungsstandard der Automobilindustrie: AEC-Q101
Anzahl der Pins: 6Pin(s)
Produktpalette: -
productTraceability: Yes-Date/Lot Code
Wandlerpolarität: n-Kanal
Kanaltyp: n-Kanal
Betriebswiderstand, Rds(on): 0.085ohm
Rds(on)-Prüfspannung: 10V
Betriebstemperatur, max.: 175°C
Drain-Source-Durchgangswiderstand: 0.085ohm
SVHC: No SVHC (14-Jun-2023)
auf Bestellung 10495 Stücke:
Lieferzeit 14-21 Tag (e)
885+0.29 EUR
901+0.26 EUR
926+0.23 EUR
5000+0.21 EUR
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BUK6D120-40EXNexperia USA Inc.Description: MOSFET N-CH 40V 2.9A/5.7A 6DFN
Packaging: Cut Tape (CT)
Package / Case: 6-UDFN Exposed Pad
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 2.9A (Ta), 5.7A (Tc)
Rds On (Max) @ Id, Vgs: 120mOhm @ 2.9A, 10V
Power Dissipation (Max): 2W (Ta), 7.5W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: DFN2020MD-6
Grade: Automotive
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 3.6 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 113 pF @ 20 V
Qualification: AEC-Q101
auf Bestellung 8985 Stücke:
Lieferzeit 10-14 Tag (e)
20+1.05 EUR
33+0.64 EUR
100+0.4 EUR
500+0.31 EUR
1000+0.27 EUR
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BUK6D120-40EXNexperiaMOSFET BUK6D120-40E/SOT1220/SOT1220
auf Bestellung 9000 Stücke:
Lieferzeit 10-14 Tag (e)
3000+0.2 EUR
9000+0.18 EUR
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BUK6D120-40EXNEXPERIADescription: NEXPERIA - BUK6D120-40EX - Leistungs-MOSFET, n-Kanal, 40 V, 5.7 A, 0.085 ohm, DFN2020MD, Oberflächenmontage
tariffCode: 85412900
Transistormontage: Oberflächenmontage
Drain-Source-Spannung Vds: 40V
rohsCompliant: YES
Dauer-Drainstrom Id: 5.7A
hazardous: false
rohsPhthalatesCompliant: YES
Qualifikation: AEC-Q101
MSL: MSL 1 - unbegrenzt
usEccn: EAR99
Verlustleistung Pd: 7.5W
Gate-Source-Schwellenspannung, max.: 1.6V
euEccn: NLR
Verlustleistung: 7.5W
Bauform - Transistor: DFN2020MD
Qualifizierungsstandard der Automobilindustrie: AEC-Q101
Anzahl der Pins: 6Pin(s)
Produktpalette: -
productTraceability: Yes-Date/Lot Code
Wandlerpolarität: n-Kanal
Kanaltyp: n-Kanal
Betriebswiderstand, Rds(on): 0.085ohm
Rds(on)-Prüfspannung: 10V
Betriebstemperatur, max.: 175°C
Drain-Source-Durchgangswiderstand: 0.085ohm
SVHC: No SVHC (14-Jun-2023)
auf Bestellung 10495 Stücke:
Lieferzeit 14-21 Tag (e)
885+0.29 EUR
901+0.26 EUR
926+0.23 EUR
5000+0.21 EUR
Mindestbestellmenge: 885 Stücke
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BUK6D120-60PNexperiaMOSFET
Produkt ist nicht verfügbar
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BUK6D120-60PXNexperiaMOSFETs SOT1220 P-CH 60V 8A
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BUK6D120-60PXNEXPERIACategory: SMD P channel transistors
Description: Transistor: P-MOSFET; Trench; unipolar; -60V; -5.1A; Idm: -32A; 15W
Type of transistor: P-MOSFET
Technology: Trench
Polarisation: unipolar
Drain-source voltage: -60V
Drain current: -5.1A
Pulsed drain current: -32A
Power dissipation: 15W
Case: DFN2020MD-6; SOT1220
On-state resistance: 256mΩ
Mounting: SMD
Gate charge: 18nC
Kind of package: reel; tape
Kind of channel: enhancement
Application: automotive industry
Produkt ist nicht verfügbar
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BUK6D120-60PXNEXPERIADescription: NEXPERIA - BUK6D120-60PX - Leistungs-MOSFET, p-Kanal, 60 V, 8 A, 0.12 ohm, SOT-1220, Oberflächenmontage
tariffCode: 85412900
Transistormontage: Oberflächenmontage
Drain-Source-Spannung Vds: 60V
rohsCompliant: YES
Dauer-Drainstrom Id: 8A
hazardous: false
rohsPhthalatesCompliant: YES
Qualifikation: AEC-Q101
MSL: MSL 1 - unbegrenzt
usEccn: EAR99
Gate-Source-Schwellenspannung, max.: 2.5V
euEccn: NLR
Verlustleistung: 15W
Bauform - Transistor: SOT-1220
Anzahl der Pins: 6Pin(s)
Produktpalette: -
productTraceability: No
Kanaltyp: p-Kanal
Rds(on)-Prüfspannung: 10V
Betriebstemperatur, max.: 175°C
Drain-Source-Durchgangswiderstand: 0.12ohm
SVHC: No SVHC (25-Jun-2025)
auf Bestellung 695 Stücke:
Lieferzeit 14-21 Tag (e)
197+1.27 EUR
281+0.82 EUR
381+0.56 EUR
500+0.43 EUR
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BUK6D120-60PXNexperiaTrans MOSFET P-CH 60V 3A Automotive 6-Pin DFN-MD EP T/R Транзистори
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BUK6D120-60PXNexperia USA Inc.Description: MOSFET P-CH 60V 3A/8A 6DFN
auf Bestellung 3000 Stücke:
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3000+0.31 EUR
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BUK6D120-60PXNEXPERIADescription: NEXPERIA - BUK6D120-60PX - Leistungs-MOSFET, p-Kanal, 60 V, 8 A, 0.12 ohm, SOT-1220, Oberflächenmontage
tariffCode: 85412900
Transistormontage: Oberflächenmontage
Drain-Source-Spannung Vds: 60V
rohsCompliant: YES
Dauer-Drainstrom Id: 8A
hazardous: false
rohsPhthalatesCompliant: YES
Qualifikation: AEC-Q101
MSL: MSL 1 - unbegrenzt
usEccn: EAR99
Gate-Source-Schwellenspannung, max.: 2.5V
euEccn: NLR
Verlustleistung: 15W
Bauform - Transistor: SOT-1220
Anzahl der Pins: 6Pin(s)
Produktpalette: -
productTraceability: No
Kanaltyp: p-Kanal
Rds(on)-Prüfspannung: 10V
Betriebstemperatur, max.: 175°C
Drain-Source-Durchgangswiderstand: 0.12ohm
SVHC: No SVHC (25-Jun-2025)
auf Bestellung 695 Stücke:
Lieferzeit 14-21 Tag (e)
197+1.27 EUR
281+0.82 EUR
381+0.56 EUR
500+0.43 EUR
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BUK6D120-60PXNexperiaTrans MOSFET P-CH 60V 3A 6-Pin DFN-MD EP T/R Automotive AEC-Q101
Produkt ist nicht verfügbar
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BUK6D120-60PXNexperia USA Inc.Description: MOSFET P-CH 60V 3A/8A 6DFN
auf Bestellung 3565 Stücke:
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16+1.34 EUR
26+0.83 EUR
100+0.54 EUR
500+0.4 EUR
1000+0.36 EUR
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BUK6D120-60PZNexperia USA Inc.Description: BUK6D120-60P/SOT1220/SOT1220
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Part Status: Active
Supplier Device Package: DFN2020MD-6
Vgs(th) (Max) @ Id: 3.2V @ 250µA
Power Dissipation (Max): 2.3W (Ta), 15W (Tc)
Rds On (Max) @ Id, Vgs: 120mOhm @ 3A, 10V
Current - Continuous Drain (Id) @ 25°C: 3A (Ta), 8A (Tc)
FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: 6-UDFN Exposed Pad
Packaging: Tape & Reel (TR)
Input Capacitance (Ciss) (Max) @ Vds: 724 pF @ 30 V
Gate Charge (Qg) (Max) @ Vgs: 18 nC @ 10 V
Drain to Source Voltage (Vdss): 60 V
Vgs (Max): ±20V
Qualification: AEC-Q101
Grade: Automotive
Produkt ist nicht verfügbar
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BUK6D120-60PZNexperiaMOSFETs SOT1220 P-CH 60V 8A
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BUK6D125-60EXNexperia USA Inc.Description: MOSFET N-CH 60V 2.7A/7.4A 6DFN
Qualification: AEC-Q101
Input Capacitance (Ciss) (Max) @ Vds: 196 pF @ 30 V
Gate Charge (Qg) (Max) @ Vgs: 6 nC @ 10 V
Drain to Source Voltage (Vdss): 60 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Grade: Automotive
Supplier Device Package: DFN2020MD-6
Vgs(th) (Max) @ Id: 2.7V @ 250µA
Power Dissipation (Max): 2W (Ta), 15W (Tc)
Rds On (Max) @ Id, Vgs: 125mOhm @ 2.7A, 10V
Current - Continuous Drain (Id) @ 25°C: 2.7A (Ta), 7.4A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: 6-UDFN Exposed Pad
Packaging: Tape & Reel (TR)
auf Bestellung 3000 Stücke:
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3000+0.23 EUR
Mindestbestellmenge: 3000 Stücke
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BUK6D125-60EXNexperiaMOSFETs SOT1220 N-CH 60V 7.4A
auf Bestellung 5688 Stücke:
Lieferzeit 10-14 Tag (e)
4+0.87 EUR
10+0.69 EUR
100+0.36 EUR
500+0.33 EUR
1000+0.29 EUR
3000+0.21 EUR
6000+0.2 EUR
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