Produkte > DMP
| Bezeichnung | Hersteller | Beschreibung | Verfügbarkeit | Privatkunde | ||||||||||||||
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| DMP2045UFY4-7 | Diodes Incorporated | Description: MOSFET P-CH 20V 4.7A X2-DFN2015 Mounting Type: Surface Mount Package / Case: 3-XDFN Packaging: Tape & Reel (TR) Input Capacitance (Ciss) (Max) @ Vds: 634 pF @ 10 V Gate Charge (Qg) (Max) @ Vgs: 6.8 nC @ 4.5 V Drain to Source Voltage (Vdss): 20 V Vgs (Max): ±8V Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4.5V Part Status: Active Supplier Device Package: X2-DFN2015-3 Vgs(th) (Max) @ Id: 1V @ 250µA Power Dissipation (Max): 670mW (Ta) Rds On (Max) @ Id, Vgs: 45mOhm @ 4A, 4.5V Current - Continuous Drain (Id) @ 25°C: 4.7A (Ta) FET Type: P-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 150°C (TJ) | auf Bestellung 1206000 Stücke: Lieferzeit 10-14 Tag (e) |
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| DMP2045UFY4-7 | Diodes Zetex | Trans MOSFET P-CH 20V 4.7A 3-Pin X2-DFN T/R | auf Bestellung 6000 Stücke: Lieferzeit 14-21 Tag (e) |
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| DMP2045UFY4-7 | Diodes Incorporated | MOSFETs MOSFET BVDSS: 8V 24V X2-DFN2015-3 T&R 3K | auf Bestellung 27927 Stücke: Lieferzeit 10-14 Tag (e) |
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| DMP2045UFY4-7 | Diodes | MOSFET P-CH 20V 4.7A X2-DFN2015 Транзистори | Produkt ist nicht verfügbar | Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
| DMP2045UQ-13 | Diodes Zetex | Trans MOSFET P-CH 20V 4.3A 3-Pin SOT-23 T/R Automotive AEC-Q101 | auf Bestellung 10000 Stücke: Lieferzeit 14-21 Tag (e) |
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| DMP2045UQ-13 | Diodes Incorporated | Description: MOSFET BVDSS: 8V~24V SOT23 T&R 1 Packaging: Cut Tape (CT) Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 4.3A (Ta) Rds On (Max) @ Id, Vgs: 45mOhm @ 4A, 4.5V Power Dissipation (Max): 800mW (Ta) Vgs(th) (Max) @ Id: 1V @ 250µA Supplier Device Package: SOT-23-3 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V Vgs (Max): ±8V Drain to Source Voltage (Vdss): 20 V Gate Charge (Qg) (Max) @ Vgs: 6.8 nC @ 4.5 V Input Capacitance (Ciss) (Max) @ Vds: 634 pF @ 10 V Grade: Automotive Qualification: AEC-Q101 | auf Bestellung 3154 Stücke: Lieferzeit 10-14 Tag (e) |
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| DMP2045UQ-13 | Diodes Incorporated | MOSFETs MOSFET BVDSS: 8V 24V SOT23 T&R 10K | auf Bestellung 5177 Stücke: Lieferzeit 10-14 Tag (e) |
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| DMP2045UQ-13 | Diodes Zetex | Trans MOSFET P-CH 20V 4.3A 3-Pin SOT-23 T/R Automotive AEC-Q101 | auf Bestellung 10000 Stücke: Lieferzeit 14-21 Tag (e) |
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| DMP2045UQ-13 | Diodes Incorporated | Description: MOSFET BVDSS: 8V~24V SOT23 T&R 1 Packaging: Tape & Reel (TR) Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 4.3A (Ta) Rds On (Max) @ Id, Vgs: 45mOhm @ 4A, 4.5V Power Dissipation (Max): 800mW (Ta) Vgs(th) (Max) @ Id: 1V @ 250µA Supplier Device Package: SOT-23-3 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V Vgs (Max): ±8V Drain to Source Voltage (Vdss): 20 V Gate Charge (Qg) (Max) @ Vgs: 6.8 nC @ 4.5 V Input Capacitance (Ciss) (Max) @ Vds: 634 pF @ 10 V Grade: Automotive Qualification: AEC-Q101 | Produkt ist nicht verfügbar | Mindestbestellmenge: 10000 Stücke Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
| DMP2045UQ-7 | Diodes Zetex | Trans MOSFET P-CH 20V 4.3A 3-Pin SOT-23 T/R Automotive AEC-Q101 | auf Bestellung 21000 Stücke: Lieferzeit 14-21 Tag (e) |
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| DMP2045UQ-7 | Diodes Incorporated | Description: MOSFET P-CH 20V 4.3A SOT23 Input Capacitance (Ciss) (Max) @ Vds: 634 pF @ 10 V Gate Charge (Qg) (Max) @ Vgs: 6.8 nC @ 4.5 V Drain to Source Voltage (Vdss): 20 V Vgs (Max): ±8V Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V Part Status: Active Supplier Device Package: SOT-23-3 Vgs(th) (Max) @ Id: 1V @ 250µA Power Dissipation (Max): 800mW (Ta) Rds On (Max) @ Id, Vgs: 45mOhm @ 4A, 4.5V Current - Continuous Drain (Id) @ 25°C: 4.3A (Ta) FET Type: P-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: TO-236-3, SC-59, SOT-23-3 Packaging: Tape & Reel (TR) Qualification: AEC-Q101 Grade: Automotive | auf Bestellung 47360 Stücke: Lieferzeit 10-14 Tag (e) |
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| DMP2045UQ-7 | Diodes Incorporated | MOSFETs MOSFET BVDSS: 8V 24V SOT23 T&R 3K | auf Bestellung 101114 Stücke: Lieferzeit 10-14 Tag (e) |
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| DMP2045UQ-7 | Diodes Zetex | Trans MOSFET P-CH 20V 4.3A 3-Pin SOT-23 T/R Automotive AEC-Q101 | auf Bestellung 126000 Stücke: Lieferzeit 14-21 Tag (e) |
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| DMP2045UQ-7 | Diodes Zetex | Trans MOSFET P-CH 20V 4.3A 3-Pin SOT-23 T/R Automotive AEC-Q101 | auf Bestellung 126000 Stücke: Lieferzeit 14-21 Tag (e) |
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| DMP2045UQ-7 | DIODES INC. | Description: DIODES INC. - DMP2045UQ-7 - Leistungs-MOSFET, p-Kanal, 20 V, 4.3 A, 0.045 ohm, SOT-23, Oberflächenmontage tariffCode: 85412100 Transistormontage: Oberflächenmontage Drain-Source-Spannung Vds: 20V rohsCompliant: YES Dauer-Drainstrom Id: 4.3A hazardous: false rohsPhthalatesCompliant: YES Qualifikation: AEC-Q101 isCanonical: Y MSL: MSL 1 - unbegrenzt usEccn: EAR99 Gate-Source-Schwellenspannung, max.: 1V euEccn: NLR Verlustleistung: 800mW Bauform - Transistor: SOT-23 Anzahl der Pins: 3Pin(s) Produktpalette: - productTraceability: No Kanaltyp: p-Kanal Rds(on)-Prüfspannung: 4.5V Betriebstemperatur, max.: 150°C Drain-Source-Durchgangswiderstand: 0.045ohm SVHC: No SVHC (27-Jun-2024) | auf Bestellung 2783 Stücke: Lieferzeit 14-21 Tag (e) |
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| DMP2045UQ-7 | Diodes Incorporated | Description: MOSFET P-CH 20V 4.3A SOT23 Current - Continuous Drain (Id) @ 25°C: 4.3A (Ta) FET Type: P-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: TO-236-3, SC-59, SOT-23-3 Packaging: Cut Tape (CT) Input Capacitance (Ciss) (Max) @ Vds: 634 pF @ 10 V Gate Charge (Qg) (Max) @ Vgs: 6.8 nC @ 4.5 V Drain to Source Voltage (Vdss): 20 V Vgs (Max): ±8V Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V Part Status: Active Supplier Device Package: SOT-23-3 Vgs(th) (Max) @ Id: 1V @ 250µA Power Dissipation (Max): 800mW (Ta) Rds On (Max) @ Id, Vgs: 45mOhm @ 4A, 4.5V Qualification: AEC-Q101 Grade: Automotive | auf Bestellung 49125 Stücke: Lieferzeit 10-14 Tag (e) |
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| DMP2045UQ-7 | Diodes Zetex | Trans MOSFET P-CH 20V 4.3A 3-Pin SOT-23 T/R Automotive AEC-Q101 | auf Bestellung 21000 Stücke: Lieferzeit 14-21 Tag (e) |
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| DMP2045UQ-7 | DIODES INCORPORATED | Category: SMD P channel transistors Description: Transistor: P-MOSFET; unipolar; -20V; -3.5A; Idm: -25A; 1.2W; SOT23 Mounting: SMD Case: SOT23 Kind of channel: enhancement Type of transistor: P-MOSFET Polarisation: unipolar Pulsed drain current: -25A Drain-source voltage: -20V Drain current: -3.5A Gate charge: 6.8nC On-state resistance: 90mΩ Power dissipation: 1.2W Gate-source voltage: ±8V Kind of package: 7 inch reel; tape Application: automotive industry | Produkt ist nicht verfügbar | Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
| DMP2045UQ-7 | DIODES INC. | Description: DIODES INC. - DMP2045UQ-7 - Leistungs-MOSFET, p-Kanal, 20 V, 4.3 A, 0.045 ohm, SOT-23, Oberflächenmontage tariffCode: 85412100 Transistormontage: Oberflächenmontage Drain-Source-Spannung Vds: 20V rohsCompliant: YES Dauer-Drainstrom Id: 4.3A hazardous: false rohsPhthalatesCompliant: YES Qualifikation: AEC-Q101 isCanonical: Y MSL: MSL 1 - unbegrenzt usEccn: EAR99 Gate-Source-Schwellenspannung, max.: 1V euEccn: NLR Verlustleistung: 800mW Bauform - Transistor: SOT-23 Anzahl der Pins: 3Pin(s) Produktpalette: - productTraceability: No Kanaltyp: p-Kanal Rds(on)-Prüfspannung: 4.5V Betriebstemperatur, max.: 150°C Drain-Source-Durchgangswiderstand: 0.045ohm SVHC: No SVHC (27-Jun-2024) | auf Bestellung 2783 Stücke: Lieferzeit 14-21 Tag (e) |
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| DMP2047UCB4-7 | DIODES INC. | Description: DIODES INC. - DMP2047UCB4-7 - Leistungs-MOSFET, p-Kanal, 20 V, 4.1 A, 0.04 ohm, U-WLB1010, Oberflächenmontage tariffCode: 85411000 Transistormontage: Oberflächenmontage Drain-Source-Spannung Vds: 20V rohsCompliant: YES Dauer-Drainstrom Id: 4.1A hazardous: false rohsPhthalatesCompliant: YES Qualifikation: - MSL: MSL 1 - unbegrenzt usEccn: EAR99 Gate-Source-Schwellenspannung, max.: 800mV euEccn: NLR Verlustleistung: 1W Bauform - Transistor: U-WLB1010 Anzahl der Pins: 4Pin(s) Produktpalette: - productTraceability: Yes-Date/Lot Code Kanaltyp: p-Kanal Rds(on)-Prüfspannung: 4.5V Betriebstemperatur, max.: 150°C Drain-Source-Durchgangswiderstand: 0.04ohm SVHC: No SVHC (15-Jan-2018) | auf Bestellung 235 Stücke: Lieferzeit 14-21 Tag (e) |
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| DMP2047UCB4-7 | Diodes Zetex | Trans MOSFET P-CH 20V 4.1A 4-Pin U-WLB T/R | Produkt ist nicht verfügbar | Mindestbestellmenge: 3000 Stücke Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
| DMP2047UCB4-7 | Diodes Incorporated | Description: MOSFET P-CH 20V 4.1A U-WLB1010-4 Packaging: Tape & Reel (TR) Package / Case: 4-UFBGA, WLBGA Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 4.1A (Ta) Rds On (Max) @ Id, Vgs: 47mOhm @ 1A, 4.5V Power Dissipation (Max): 1W (Ta) Vgs(th) (Max) @ Id: 1.2V @ 250µA Supplier Device Package: U-WLB1010-4 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V Vgs (Max): -6V Drain to Source Voltage (Vdss): 20 V Gate Charge (Qg) (Max) @ Vgs: 2.3 nC @ 4.5 V Input Capacitance (Ciss) (Max) @ Vds: 218 pF @ 10 V | auf Bestellung 324000 Stücke: Lieferzeit 10-14 Tag (e) |
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| DMP2047UCB4-7 | DIODES INCORPORATED | Category: SMD P channel transistors Description: Transistor: P-MOSFET; unipolar; -20V; -3.2A; Idm: -16A; 1.66W Type of transistor: P-MOSFET Polarisation: unipolar Drain-source voltage: -20V Drain current: -3.2A Pulsed drain current: -16A Power dissipation: 1.66W Case: U-WLB1010-4 Gate-source voltage: ±6V On-state resistance: 60mΩ Mounting: SMD Gate charge: 2.3nC Kind of package: 7 inch reel; tape Kind of channel: enhancement | Produkt ist nicht verfügbar | Mindestbestellmenge: 3000 Stücke Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
| DMP2047UCB4-7 | Diodes Zetex | Trans MOSFET P-CH 20V 4.1A 4-Pin U-WLB T/R | auf Bestellung 2180 Stücke: Lieferzeit 14-21 Tag (e) |
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| DMP2047UCB4-7 | Diodes Incorporated | MOSFETs P-Ch ENH Mode FET -20V -6 | auf Bestellung 33309 Stücke: Lieferzeit 10-14 Tag (e) |
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| DMP2047UCB4-7 | DIODES INC. | Description: DIODES INC. - DMP2047UCB4-7 - Leistungs-MOSFET, p-Kanal, 20 V, 4.1 A, 0.04 ohm, U-WLB1010, Oberflächenmontage tariffCode: 85411000 Transistormontage: Oberflächenmontage Drain-Source-Spannung Vds: 20V rohsCompliant: YES Dauer-Drainstrom Id: 4.1A hazardous: false rohsPhthalatesCompliant: YES Qualifikation: - MSL: MSL 1 - unbegrenzt usEccn: EAR99 Gate-Source-Schwellenspannung, max.: 800mV euEccn: NLR Verlustleistung: 1W Bauform - Transistor: U-WLB1010 Anzahl der Pins: 4Pin(s) Produktpalette: - productTraceability: Yes-Date/Lot Code Kanaltyp: p-Kanal Rds(on)-Prüfspannung: 4.5V Betriebstemperatur, max.: 150°C Drain-Source-Durchgangswiderstand: 0.04ohm SVHC: No SVHC (15-Jan-2018) | auf Bestellung 235 Stücke: Lieferzeit 14-21 Tag (e) |
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| DMP2047UCB4-7 | Diodes Zetex | Trans MOSFET P-CH 20V 4.1A 4-Pin U-WLB T/R | auf Bestellung 2180 Stücke: Lieferzeit 14-21 Tag (e) |
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| DMP2047UCB4-7 | Diodes Incorporated | Description: MOSFET P-CH 20V 4.1A U-WLB1010-4 Packaging: Cut Tape (CT) Package / Case: 4-UFBGA, WLBGA Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 4.1A (Ta) Rds On (Max) @ Id, Vgs: 47mOhm @ 1A, 4.5V Power Dissipation (Max): 1W (Ta) Vgs(th) (Max) @ Id: 1.2V @ 250µA Supplier Device Package: U-WLB1010-4 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V Vgs (Max): -6V Drain to Source Voltage (Vdss): 20 V Gate Charge (Qg) (Max) @ Vgs: 2.3 nC @ 4.5 V Input Capacitance (Ciss) (Max) @ Vds: 218 pF @ 10 V | auf Bestellung 326640 Stücke: Lieferzeit 10-14 Tag (e) |
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| DMP2060UFDB-13 | Diodes Incorporated | MOSFET 20V Dual P-Ch Enh 12Vgs -1.4W 884pF | Produkt ist nicht verfügbar | Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
| DMP2060UFDB-13 | Diodes Incorporated | Description: MOSFET 2P-CH 20V 3.2A 6UDFN Supplier Device Package: U-DFN2020-6 (Type B) Vgs(th) (Max) @ Id: 1.4V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 18nC @ 8V Rds On (Max) @ Id, Vgs: 90mOhm @ 2.9A, 4.5V Input Capacitance (Ciss) (Max) @ Vds: 881pF @ 10V Current - Continuous Drain (Id) @ 25°C: 3.2A Drain to Source Voltage (Vdss): 20V Power - Max: 1.4W Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 150°C (TJ) Configuration: 2 P-Channel (Dual) Mounting Type: Surface Mount Package / Case: 6-UDFN Exposed Pad Packaging: Tape & Reel (TR) | Produkt ist nicht verfügbar | Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
| DMP2060UFDB-7 | Diodes Incorporated | Description: MOSFET 2P-CH 20V 3.2A 6UDFN Supplier Device Package: U-DFN2020-6 (Type B) Vgs(th) (Max) @ Id: 1.4V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 18nC @ 8V Rds On (Max) @ Id, Vgs: 90mOhm @ 2.9A, 4.5V Input Capacitance (Ciss) (Max) @ Vds: 881pF @ 10V Current - Continuous Drain (Id) @ 25°C: 3.2A Drain to Source Voltage (Vdss): 20V Power - Max: 1.4W Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 150°C (TJ) Configuration: 2 P-Channel (Dual) Mounting Type: Surface Mount Package / Case: 6-UDFN Exposed Pad Packaging: Tape & Reel (TR) | Produkt ist nicht verfügbar | Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
| DMP2060UFDB-7 | Diodes Zetex | Trans MOSFET P-CH 20V 3.2A 6-Pin UDFN EP T/R | auf Bestellung 980 Stücke: Lieferzeit 14-21 Tag (e) |
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| DMP2060UFDB-7 | Diodes Incorporated | Description: MOSFET 2P-CH 20V 3.2A 6UDFN Supplier Device Package: U-DFN2020-6 (Type B) Vgs(th) (Max) @ Id: 1.4V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 18nC @ 8V Rds On (Max) @ Id, Vgs: 90mOhm @ 2.9A, 4.5V Input Capacitance (Ciss) (Max) @ Vds: 881pF @ 10V Current - Continuous Drain (Id) @ 25°C: 3.2A Drain to Source Voltage (Vdss): 20V Power - Max: 1.4W Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 150°C (TJ) Configuration: 2 P-Channel (Dual) Mounting Type: Surface Mount Package / Case: 6-UDFN Exposed Pad Packaging: Cut Tape (CT) | auf Bestellung 2075 Stücke: Lieferzeit 10-14 Tag (e) |
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| DMP2060UFDB-7 | Diodes Incorporated | MOSFET 20V Dual P-Ch Enh 12Vgs -1.4W 884pF | Produkt ist nicht verfügbar | Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
| DMP2060UFDB-7 | Diodes Zetex | Trans MOSFET P-CH 20V 3.2A 6-Pin UDFN EP T/R | auf Bestellung 980 Stücke: Lieferzeit 14-21 Tag (e) |
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| DMP2065U-7 | Diodes Incorporated | Description: MOSFET BVDSS: 8V~24V SOT23 T&R 3 Packaging: Tape & Reel (TR) Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 4A (Ta) Rds On (Max) @ Id, Vgs: 60mOhm @ 4.2A, 4.5V Power Dissipation (Max): 900mW Vgs(th) (Max) @ Id: 900mV @ 250µA Supplier Device Package: SOT-23-3 Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V Vgs (Max): ±12V Drain to Source Voltage (Vdss): 20 V Gate Charge (Qg) (Max) @ Vgs: 10.2 nC @ 4.5 V Input Capacitance (Ciss) (Max) @ Vds: 808 pF @ 15 V | Produkt ist nicht verfügbar | Mindestbestellmenge: 3000 Stücke Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
| DMP2065U-7 | DIODES INC. | Description: DIODES INC. - DMP2065U-7 - Leistungs-MOSFET, p-Kanal, 20 V, 4 A, 0.041 ohm, SOT-23, Oberflächenmontage tariffCode: 85412900 Transistormontage: Oberflächenmontage Drain-Source-Spannung Vds: 20V rohsCompliant: YES Dauer-Drainstrom Id: 4A hazardous: false rohsPhthalatesCompliant: YES Qualifikation: - MSL: MSL 1 - unbegrenzt usEccn: EAR99 Gate-Source-Schwellenspannung, max.: 900mV euEccn: NLR Verlustleistung: 1.5W Bauform - Transistor: SOT-23 Anzahl der Pins: 3Pin(s) Produktpalette: - productTraceability: Yes-Date/Lot Code Kanaltyp: p-Kanal Rds(on)-Prüfspannung: 4.5V Betriebstemperatur, max.: 150°C Drain-Source-Durchgangswiderstand: 0.041ohm SVHC: No SVHC (23-Jan-2024) | auf Bestellung 2535 Stücke: Lieferzeit 14-21 Tag (e) |
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| DMP2065U-7 | Diodes Incorporated | MOSFETs MOSFET BVDSS: 8V 24V SOT23 T&R 3K | auf Bestellung 5503 Stücke: Lieferzeit 10-14 Tag (e) |
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| DMP2065U-7 | Diodes Incorporated | Description: MOSFET BVDSS: 8V~24V SOT23 T&R 3 Packaging: Cut Tape (CT) Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 4A (Ta) Rds On (Max) @ Id, Vgs: 60mOhm @ 4.2A, 4.5V Power Dissipation (Max): 900mW Vgs(th) (Max) @ Id: 900mV @ 250µA Supplier Device Package: SOT-23-3 Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V Vgs (Max): ±12V Drain to Source Voltage (Vdss): 20 V Gate Charge (Qg) (Max) @ Vgs: 10.2 nC @ 4.5 V Input Capacitance (Ciss) (Max) @ Vds: 808 pF @ 15 V | auf Bestellung 1444 Stücke: Lieferzeit 10-14 Tag (e) |
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| DMP2065U-7 | DIODES INC. | Description: DIODES INC. - DMP2065U-7 - Leistungs-MOSFET, p-Kanal, 20 V, 4 A, 0.041 ohm, SOT-23, Oberflächenmontage tariffCode: 85412900 Transistormontage: Oberflächenmontage Drain-Source-Spannung Vds: 20V rohsCompliant: YES Dauer-Drainstrom Id: 4A hazardous: false rohsPhthalatesCompliant: YES Qualifikation: - MSL: MSL 1 - unbegrenzt usEccn: EAR99 Gate-Source-Schwellenspannung, max.: 900mV euEccn: NLR Verlustleistung: 1.5W Bauform - Transistor: SOT-23 Anzahl der Pins: 3Pin(s) Produktpalette: - productTraceability: Yes-Date/Lot Code Kanaltyp: p-Kanal Rds(on)-Prüfspannung: 4.5V Betriebstemperatur, max.: 150°C Drain-Source-Durchgangswiderstand: 0.041ohm SVHC: No SVHC (23-Jan-2024) | auf Bestellung 2535 Stücke: Lieferzeit 14-21 Tag (e) |
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| DMP2065UFDB | Diodes Incorporated | MOSFET | Produkt ist nicht verfügbar | Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
| DMP2065UFDB-13 | Diodes Incorporated | Description: MOSFET 2P-CH 4.5A 6UDFN Packaging: Cut Tape (CT) Package / Case: 6-UDFN Exposed Pad Mounting Type: Surface Mount Configuration: 2 P-Channel (Dual) Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) Current - Continuous Drain (Id) @ 25°C: 4.5A (Ta) Input Capacitance (Ciss) (Max) @ Vds: 752pF @ 15V Rds On (Max) @ Id, Vgs: 50mOhm @ 2A, 4.5V Gate Charge (Qg) (Max) @ Vgs: 9.1nC @ 4.5V Vgs(th) (Max) @ Id: 1V @ 250µA Supplier Device Package: U-DFN2020-6 (Type B) | auf Bestellung 77734 Stücke: Lieferzeit 10-14 Tag (e) |
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| DMP2065UFDB-13 | Diodes Zetex | Trans MOSFET P-CH 20V 4.5A 6-Pin UDFN EP T/R | Produkt ist nicht verfügbar | Mindestbestellmenge: 10000 Stücke Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
| DMP2065UFDB-13 | Diodes Incorporated | Description: MOSFET 2P-CH 4.5A 6UDFN Packaging: Tape & Reel (TR) Package / Case: 6-UDFN Exposed Pad Mounting Type: Surface Mount Configuration: 2 P-Channel (Dual) Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) Current - Continuous Drain (Id) @ 25°C: 4.5A (Ta) Input Capacitance (Ciss) (Max) @ Vds: 752pF @ 15V Rds On (Max) @ Id, Vgs: 50mOhm @ 2A, 4.5V Gate Charge (Qg) (Max) @ Vgs: 9.1nC @ 4.5V Vgs(th) (Max) @ Id: 1V @ 250µA Supplier Device Package: U-DFN2020-6 (Type B) | auf Bestellung 70000 Stücke: Lieferzeit 10-14 Tag (e) |
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| DMP2065UFDB-13 | Diodes Zetex | Trans MOSFET P-CH 20V 4.5A 6-Pin UDFN EP T/R | auf Bestellung 60000 Stücke: Lieferzeit 14-21 Tag (e) |
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| DMP2065UFDB-13 | Diodes Incorporated | MOSFETs MOSFET BVDSS: 8V~24V U-DFN2020-6 T&R 10K | Produkt ist nicht verfügbar | Mindestbestellmenge: 3 Stücke Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
| DMP2065UFDB-7 | Diodes Zetex | Trans MOSFET P-CH 20V 4.5A 6-Pin UDFN EP T/R | auf Bestellung 3000 Stücke: Lieferzeit 14-21 Tag (e) |
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| DMP2065UFDB-7 | Diodes Incorporated | Description: MOSFET 2P-CH 20V 4.5A 6UDFN Packaging: Cut Tape (CT) Package / Case: 6-UDFN Exposed Pad Mounting Type: Surface Mount Configuration: 2 P-Channel (Dual) Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 1.54W Drain to Source Voltage (Vdss): 20V Current - Continuous Drain (Id) @ 25°C: 4.5A (Ta) Input Capacitance (Ciss) (Max) @ Vds: 752pF @ 15V Rds On (Max) @ Id, Vgs: 50mOhm @ 2A, 4.5V Gate Charge (Qg) (Max) @ Vgs: 9.1nC @ 4.5V Vgs(th) (Max) @ Id: 1V @ 250µA Supplier Device Package: U-DFN2020-6 (Type B) Part Status: Active | auf Bestellung 31489 Stücke: Lieferzeit 10-14 Tag (e) |
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| DMP2065UFDB-7 | Diodes Incorporated | MOSFETs MOSFET BVDSS: 8V 24V U-DFN2020-6 T&R 3K | auf Bestellung 23354 Stücke: Lieferzeit 10-14 Tag (e) |
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| DMP2065UFDB-7 | Diodes Zetex | Trans MOSFET P-CH 20V 4.5A 6-Pin UDFN EP T/R | auf Bestellung 684000 Stücke: Lieferzeit 14-21 Tag (e) |
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| DMP2065UFDB-7 | Diodes Zetex | Trans MOSFET P-CH 20V 4.5A 6-Pin UDFN EP T/R | auf Bestellung 30000 Stücke: Lieferzeit 14-21 Tag (e) |
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| DMP2065UFDB-7 | Diodes Zetex | Trans MOSFET P-CH 20V 4.5A 6-Pin UDFN EP T/R | auf Bestellung 150000 Stücke: Lieferzeit 14-21 Tag (e) |
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| DMP2065UFDB-7 | Diodes Incorporated | Description: MOSFET 2P-CH 20V 4.5A 6UDFN Packaging: Tape & Reel (TR) Package / Case: 6-UDFN Exposed Pad Mounting Type: Surface Mount Configuration: 2 P-Channel (Dual) Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 1.54W Drain to Source Voltage (Vdss): 20V Current - Continuous Drain (Id) @ 25°C: 4.5A (Ta) Input Capacitance (Ciss) (Max) @ Vds: 752pF @ 15V Rds On (Max) @ Id, Vgs: 50mOhm @ 2A, 4.5V Gate Charge (Qg) (Max) @ Vgs: 9.1nC @ 4.5V Vgs(th) (Max) @ Id: 1V @ 250µA Supplier Device Package: U-DFN2020-6 (Type B) Part Status: Active | auf Bestellung 30000 Stücke: Lieferzeit 10-14 Tag (e) |
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| DMP2065UFDB-7 | Diodes Zetex | Trans MOSFET P-CH 20V 4.5A 6-Pin UDFN EP T/R | auf Bestellung 3000 Stücke: Lieferzeit 14-21 Tag (e) |
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| DMP2065UFDB-7 | Diodes Zetex | Trans MOSFET P-CH 20V 4.5A 6-Pin UDFN EP T/R | auf Bestellung 150000 Stücke: Lieferzeit 14-21 Tag (e) |
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| DMP2065UFDB-7 | Diodes Zetex | Trans MOSFET P-CH 20V 4.5A 6-Pin UDFN EP T/R | auf Bestellung 6000 Stücke: Lieferzeit 14-21 Tag (e) |
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| DMP2065UFDB-7 | Diodes Zetex | Trans MOSFET P-CH 20V 4.5A 6-Pin UDFN EP T/R | auf Bestellung 30000 Stücke: Lieferzeit 14-21 Tag (e) |
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| DMP2065UQ-7 | DIODES INC. | Description: DIODES INC. - DMP2065UQ-7 - Leistungs-MOSFET, p-Kanal, 20 V, 4 A, 0.041 ohm, SOT-23, Oberflächenmontage tariffCode: 85412900 Transistormontage: Oberflächenmontage Drain-Source-Spannung Vds: 20V rohsCompliant: YES Dauer-Drainstrom Id: 4A hazardous: false rohsPhthalatesCompliant: YES Qualifikation: AEC-Q101 MSL: MSL 1 - unbegrenzt usEccn: EAR99 Gate-Source-Schwellenspannung, max.: 900mV euEccn: NLR Verlustleistung: 1.5W Bauform - Transistor: SOT-23 Anzahl der Pins: 3Pin(s) Produktpalette: - productTraceability: Yes-Date/Lot Code Kanaltyp: p-Kanal Rds(on)-Prüfspannung: 4.5V Betriebstemperatur, max.: 150°C Drain-Source-Durchgangswiderstand: 0.041ohm SVHC: No SVHC (27-Jun-2024) | auf Bestellung 2480 Stücke: Lieferzeit 14-21 Tag (e) |
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| DMP2065UQ-7 | Diodes Incorporated | Description: MOSFET BVDSS: 8V~24V SOT23 T&R 3 Packaging: Cut Tape (CT) Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 4A (Ta) Rds On (Max) @ Id, Vgs: 60mOhm @ 4.2A, 4.5V Power Dissipation (Max): 900mW Vgs(th) (Max) @ Id: 900mV @ 250µA Supplier Device Package: SOT-23-3 Grade: Automotive Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V Vgs (Max): ±12V Drain to Source Voltage (Vdss): 20 V Gate Charge (Qg) (Max) @ Vgs: 10.2 nC @ 4.5 V Input Capacitance (Ciss) (Max) @ Vds: 808 pF @ 15 V Qualification: AEC-Q101 | auf Bestellung 5132 Stücke: Lieferzeit 10-14 Tag (e) |
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| DMP2065UQ-7 | DIODES INC. | Description: DIODES INC. - DMP2065UQ-7 - Leistungs-MOSFET, p-Kanal, 20 V, 4 A, 0.041 ohm, SOT-23, Oberflächenmontage tariffCode: 85412900 Transistormontage: Oberflächenmontage Drain-Source-Spannung Vds: 20V rohsCompliant: YES Dauer-Drainstrom Id: 4A hazardous: false rohsPhthalatesCompliant: YES Qualifikation: AEC-Q101 MSL: MSL 1 - unbegrenzt usEccn: EAR99 Gate-Source-Schwellenspannung, max.: 900mV euEccn: NLR Verlustleistung: 1.5W Bauform - Transistor: SOT-23 Anzahl der Pins: 3Pin(s) Produktpalette: - productTraceability: Yes-Date/Lot Code Kanaltyp: p-Kanal Rds(on)-Prüfspannung: 4.5V Betriebstemperatur, max.: 150°C Drain-Source-Durchgangswiderstand: 0.041ohm SVHC: No SVHC (27-Jun-2024) | auf Bestellung 2480 Stücke: Lieferzeit 14-21 Tag (e) |
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| DMP2065UQ-7 | Diodes Incorporated | Description: MOSFET BVDSS: 8V~24V SOT23 T&R 3 Packaging: Tape & Reel (TR) Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 4A (Ta) Rds On (Max) @ Id, Vgs: 60mOhm @ 4.2A, 4.5V Power Dissipation (Max): 900mW Vgs(th) (Max) @ Id: 900mV @ 250µA Supplier Device Package: SOT-23-3 Grade: Automotive Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V Vgs (Max): ±12V Drain to Source Voltage (Vdss): 20 V Gate Charge (Qg) (Max) @ Vgs: 10.2 nC @ 4.5 V Input Capacitance (Ciss) (Max) @ Vds: 808 pF @ 15 V Qualification: AEC-Q101 | auf Bestellung 3000 Stücke: Lieferzeit 10-14 Tag (e) |
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| DMP2065UQ-7 | Diodes Incorporated | MOSFETs MOSFET BVDSS: 8V 24V SOT23 T&R 3K | auf Bestellung 2984 Stücke: Lieferzeit 10-14 Tag (e) |
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| DMP2066LDM | auf Bestellung 12000 Stücke: Lieferzeit 21-28 Tag (e) | Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||||
| DMP2066LDM-7 | Diodes Incorporated | Description: MOSFET P-CH 20V 4.6A SOT-26 Input Capacitance (Ciss) (Max) @ Vds: 820 pF @ 15 V Gate Charge (Qg) (Max) @ Vgs: 10.1 nC @ 4.5 V Drain to Source Voltage (Vdss): 20 V Vgs (Max): ±12V Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V Part Status: Active Supplier Device Package: SOT-26 Vgs(th) (Max) @ Id: 1.2V @ 250µA Power Dissipation (Max): 1.25W (Ta) Rds On (Max) @ Id, Vgs: 40mOhm @ 4.6A, 4.5V Current - Continuous Drain (Id) @ 25°C: 4.6A (Ta) FET Type: P-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: SOT-23-6 Packaging: Tape & Reel (TR) | auf Bestellung 15000 Stücke: Lieferzeit 10-14 Tag (e) |
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| DMP2066LDM-7 | Diodes Incorporated | MOSFET P-channel 1.25W | auf Bestellung 9010 Stücke: Lieferzeit 10-14 Tag (e) | Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
| DMP2066LDM-7 | Diodes Incorporated | Description: MOSFET P-CH 20V 4.6A SOT-26 Input Capacitance (Ciss) (Max) @ Vds: 820 pF @ 15 V Gate Charge (Qg) (Max) @ Vgs: 10.1 nC @ 4.5 V Drain to Source Voltage (Vdss): 20 V Vgs (Max): ±12V Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V Part Status: Active Supplier Device Package: SOT-26 Vgs(th) (Max) @ Id: 1.2V @ 250µA Power Dissipation (Max): 1.25W (Ta) Rds On (Max) @ Id, Vgs: 40mOhm @ 4.6A, 4.5V Current - Continuous Drain (Id) @ 25°C: 4.6A (Ta) FET Type: P-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: SOT-23-6 Packaging: Cut Tape (CT) | auf Bestellung 18337 Stücke: Lieferzeit 10-14 Tag (e) |
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| DMP2066LDMQ-7 | Diodes Incorporated | MOSFETs MOSFET BVDSS | auf Bestellung 55 Stücke: Lieferzeit 10-14 Tag (e) |
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| DMP2066LDMQ-7 | DIODES INCORPORATED | Category: SMD P channel transistors Description: Transistor: P-MOSFET; unipolar; -20V; -3.7A; Idm: -18A; 1.25W; SOT26 Mounting: SMD Case: SOT26 Kind of package: 7 inch reel; tape Type of transistor: P-MOSFET Drain-source voltage: -20V Pulsed drain current: -18A Drain current: -3.7A Gate charge: 10.1nC On-state resistance: 70mΩ Power dissipation: 1.25W Gate-source voltage: ±12V Polarisation: unipolar Kind of channel: enhancement | Produkt ist nicht verfügbar | Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
| DMP2066LDMQ-7 | Diodes Incorporated | Description: MOSFET P-CH 20V 4.6A SOT-26 Packaging: Tape & Reel (TR) Package / Case: SOT-23-6 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 4.6A (Ta) Rds On (Max) @ Id, Vgs: 40mOhm @ 4.6A, 4.5V Power Dissipation (Max): 1.25W (Ta) Vgs(th) (Max) @ Id: 1.2V @ 250µA Supplier Device Package: SOT-26 Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V Vgs (Max): ±12V Drain to Source Voltage (Vdss): 20 V Gate Charge (Qg) (Max) @ Vgs: 10.1 nC @ 4.5 V Input Capacitance (Ciss) (Max) @ Vds: 820 pF @ 15 V Grade: Automotive Qualification: AEC-Q101 | auf Bestellung 402000 Stücke: Lieferzeit 10-14 Tag (e) |
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| DMP2066LSD-13 | Diodes Incorporated | Description: MOSFET 2P-CH 20V 5.8A 8-SOIC | Produkt ist nicht verfügbar | Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
| DMP2066LSD-13 | Diodes Incorporated | MOSFET 2xP-Channel 2W | auf Bestellung 4911 Stücke: Lieferzeit 10-14 Tag (e) | Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
| DMP2066LSD-13 | Diodes Incorporated | Description: MOSFET 2P-CH 20V 5.8A 8-SOIC | Produkt ist nicht verfügbar | Mindestbestellmenge: 2500 Stücke Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
| DMP2066LSN | auf Bestellung 12000 Stücke: Lieferzeit 21-28 Tag (e) | Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||||
| DMP2066LSN-7 | Diodes Zetex | Trans MOSFET P-CH 20V 4.6A 3-Pin SC-59 T/R | auf Bestellung 493 Stücke: Lieferzeit 14-21 Tag (e) |
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| DMP2066LSN-7 | Diodes Incorporated | MOSFETs P-channel 1.25W | auf Bestellung 14914 Stücke: Lieferzeit 10-14 Tag (e) |
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| DMP2066LSN-7 | Diodes Zetex | Trans MOSFET P-CH 20V 4.6A 3-Pin SC-59 T/R | auf Bestellung 493 Stücke: Lieferzeit 14-21 Tag (e) |
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| DMP2066LSN-7 | Diodes Incorporated | Description: MOSFET P-CH 20V 4.6A SC59-3 Package / Case: TO-236-3, SC-59, SOT-23-3 Packaging: Cut Tape (CT) Input Capacitance (Ciss) (Max) @ Vds: 820 pF @ 15 V Gate Charge (Qg) (Max) @ Vgs: 10.1 nC @ 4.5 V Drain to Source Voltage (Vdss): 20 V Vgs (Max): ±12V Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V Supplier Device Package: SC-59-3 Vgs(th) (Max) @ Id: 1.2V @ 250µA Power Dissipation (Max): 1.25W (Ta) Rds On (Max) @ Id, Vgs: 40mOhm @ 4.6A, 4.5V Current - Continuous Drain (Id) @ 25°C: 4.6A (Ta) FET Type: P-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount | auf Bestellung 300066 Stücke: Lieferzeit 10-14 Tag (e) |
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| DMP2066LSN-7 | Diodes Zetex | Trans MOSFET P-CH 20V 4.6A 3-Pin SC-59 T/R | auf Bestellung 12000 Stücke: Lieferzeit 14-21 Tag (e) |
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| DMP2066LSN-7 | Diodes Incorporated | Description: MOSFET P-CH 20V 4.6A SC59-3 Input Capacitance (Ciss) (Max) @ Vds: 820 pF @ 15 V Gate Charge (Qg) (Max) @ Vgs: 10.1 nC @ 4.5 V Drain to Source Voltage (Vdss): 20 V Vgs (Max): ±12V Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V Supplier Device Package: SC-59-3 Vgs(th) (Max) @ Id: 1.2V @ 250µA Power Dissipation (Max): 1.25W (Ta) Rds On (Max) @ Id, Vgs: 40mOhm @ 4.6A, 4.5V Current - Continuous Drain (Id) @ 25°C: 4.6A (Ta) FET Type: P-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: TO-236-3, SC-59, SOT-23-3 Packaging: Tape & Reel (TR) | auf Bestellung 297000 Stücke: Lieferzeit 10-14 Tag (e) |
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| DMP2066LSS-13 | Diodes Incorporated | Description: MOSFET P-CH 20V 6.5A 8SOP Packaging: Tape & Reel (TR) Package / Case: 8-SOIC (0.154", 3.90mm Width) Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 6.5A (Ta) Rds On (Max) @ Id, Vgs: 40mOhm @ 5.8A, 4.5V Power Dissipation (Max): 2.5W (Ta) Vgs(th) (Max) @ Id: 1.2V @ 250µA Supplier Device Package: 8-SO Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V Vgs (Max): ±12V Drain to Source Voltage (Vdss): 20 V Input Capacitance (Ciss) (Max) @ Vds: 820 pF @ 15 V | auf Bestellung 47500 Stücke: Lieferzeit 10-14 Tag (e) |
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| DMP2066LSS-13 | Diodes Incorporated | Description: MOSFET P-CH 20V 6.5A 8SOP Packaging: Cut Tape (CT) Package / Case: 8-SOIC (0.154", 3.90mm Width) Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 6.5A (Ta) Rds On (Max) @ Id, Vgs: 40mOhm @ 5.8A, 4.5V Power Dissipation (Max): 2.5W (Ta) Vgs(th) (Max) @ Id: 1.2V @ 250µA Supplier Device Package: 8-SO Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V Vgs (Max): ±12V Drain to Source Voltage (Vdss): 20 V Input Capacitance (Ciss) (Max) @ Vds: 820 pF @ 15 V | auf Bestellung 48726 Stücke: Lieferzeit 10-14 Tag (e) |
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| DMP2066LSS-13 | Diodes Incorporated | MOSFETs P-Channel 2.5W | Produkt ist nicht verfügbar | Mindestbestellmenge: 3 Stücke Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
| DMP2066LVT-13 | Diodes Incorporated | Description: MOSFET P-CH 20V 4.5A TSOT26 Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: SOT-23-6 Thin, TSOT-23-6 Packaging: Tape & Reel (TR) Supplier Device Package: TSOT-23-6 Vgs(th) (Max) @ Id: 1.5V @ 250µA Power Dissipation (Max): 1.2W (Ta) Rds On (Max) @ Id, Vgs: 45mOhm @ 4.5A, 4.5V Current - Continuous Drain (Id) @ 25°C: 4.5A (Ta) FET Type: P-Channel Input Capacitance (Ciss) (Max) @ Vds: 1496 pF @ 15 V Gate Charge (Qg) (Max) @ Vgs: 14.4 nC @ 4.5 V Drain to Source Voltage (Vdss): 20 V Vgs (Max): ±8V Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V | Produkt ist nicht verfügbar | Mindestbestellmenge: 10000 Stücke Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
| DMP2066LVT-13 | Diodes Incorporated | MOSFET FET BVDSS 8V 24V P-Ch 4.5A 45Vgs 1496 | auf Bestellung 9998 Stücke: Lieferzeit 10-14 Tag (e) | Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
| DMP2066LVT-7 | Diodes Incorporated | MOSFET FET BVDSS 8V 24V P-Ch 4.5A 45Vgs 1496 | auf Bestellung 2340 Stücke: Lieferzeit 10-14 Tag (e) | Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
| DMP2066LVT-7 | Diodes Incorporated | Description: MOSFET P-CH 20V TSOT26 | auf Bestellung 248118000 Stücke: Lieferzeit 10-14 Tag (e) | Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
| DMP2066LVT-7 | Diodes Incorporated | Description: MOSFET P-CH 20V TSOT26 | auf Bestellung 248118000 Stücke: Lieferzeit 10-14 Tag (e) | Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
| DMP2066LVT-7 | Diodes Incorporated | Description: MOSFET P-CH 20V TSOT26 | auf Bestellung 18000 Stücke: Lieferzeit 10-14 Tag (e) | Mindestbestellmenge: 3000 Stücke Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
| DMP2066UFDE-7 | DIODES INC. | Description: DIODES INC. - DMP2066UFDE-7 - Leistungs-MOSFET, p-Kanal, 20 V, 6.2 A, 0.025 ohm, U-DFN2020, Oberflächenmontage tariffCode: 85412900 Transistormontage: Oberflächenmontage Drain-Source-Spannung Vds: 20V rohsCompliant: YES Dauer-Drainstrom Id: 6.2A hazardous: false rohsPhthalatesCompliant: YES Qualifikation: AEC-Q101 usEccn: EAR99 Gate-Source-Schwellenspannung, max.: 1.1V euEccn: NLR Verlustleistung: 2.03W Bauform - Transistor: U-DFN2020 Anzahl der Pins: 6Pin(s) Produktpalette: - productTraceability: Yes-Date/Lot Code Kanaltyp: p-Kanal Rds(on)-Prüfspannung: 4.5V Betriebstemperatur, max.: 150°C Drain-Source-Durchgangswiderstand: 0.025ohm SVHC: No SVHC (27-Jun-2024) | auf Bestellung 2810 Stücke: Lieferzeit 14-21 Tag (e) |
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| DMP2066UFDE-7 | Diodes Incorporated | Description: MOSFET P-CH 20V 6.2A 6UDFN Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V Supplier Device Package: U-DFN2020-6 (Type E) Vgs(th) (Max) @ Id: 1.1V @ 250µA Power Dissipation (Max): 660mW (Ta) Rds On (Max) @ Id, Vgs: 36mOhm @ 4.6A, 4.5V Input Capacitance (Ciss) (Max) @ Vds: 1537 pF @ 10 V Gate Charge (Qg) (Max) @ Vgs: 14.4 nC @ 4.5 V Drain to Source Voltage (Vdss): 20 V Vgs (Max): ±12V Current - Continuous Drain (Id) @ 25°C: 6.2A (Ta) FET Type: P-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 6-PowerUDFN Packaging: Cut Tape (CT) | auf Bestellung 46531 Stücke: Lieferzeit 10-14 Tag (e) |
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| DMP2066UFDE-7 | Diodes Incorporated | MOSFETs MOSFET BVDSS: 8V-24V U-DFN2020-6 T&R 3K | auf Bestellung 5743 Stücke: Lieferzeit 10-14 Tag (e) |
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| DMP2066UFDE-7 | DIODES INC. | Description: DIODES INC. - DMP2066UFDE-7 - Leistungs-MOSFET, p-Kanal, 20 V, 6.2 A, 0.025 ohm, U-DFN2020, Oberflächenmontage tariffCode: 85412900 Transistormontage: Oberflächenmontage Drain-Source-Spannung Vds: 20V rohsCompliant: YES Dauer-Drainstrom Id: 6.2A hazardous: false rohsPhthalatesCompliant: YES Qualifikation: AEC-Q101 usEccn: EAR99 Gate-Source-Schwellenspannung, max.: 1.1V euEccn: NLR Verlustleistung: 2.03W Bauform - Transistor: U-DFN2020 Anzahl der Pins: 6Pin(s) Produktpalette: - productTraceability: Yes-Date/Lot Code Kanaltyp: p-Kanal Rds(on)-Prüfspannung: 4.5V Betriebstemperatur, max.: 150°C Drain-Source-Durchgangswiderstand: 0.025ohm SVHC: No SVHC (27-Jun-2024) | auf Bestellung 2810 Stücke: Lieferzeit 14-21 Tag (e) |
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| DMP2066UFDE-7 | Diodes Incorporated | Description: MOSFET P-CH 20V 6.2A 6UDFN Packaging: Tape & Reel (TR) Package / Case: 6-PowerUDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 6.2A (Ta) Rds On (Max) @ Id, Vgs: 36mOhm @ 4.6A, 4.5V Power Dissipation (Max): 660mW (Ta) Vgs(th) (Max) @ Id: 1.1V @ 250µA Supplier Device Package: U-DFN2020-6 (Type E) Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V Vgs (Max): ±12V Drain to Source Voltage (Vdss): 20 V Gate Charge (Qg) (Max) @ Vgs: 14.4 nC @ 4.5 V Input Capacitance (Ciss) (Max) @ Vds: 1537 pF @ 10 V | auf Bestellung 45000 Stücke: Lieferzeit 10-14 Tag (e) |
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| DMP2067LVT-13 | Diodes Incorporated | MOSFETs MOSFET BVDSS: 8V-24V | Produkt ist nicht verfügbar | Mindestbestellmenge: 10000 Stücke Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
| DMP2067LVT-13 | Diodes Incorporated | Description: MOSFET P-CH 20V 4.2A TSOT26 Packaging: Tape & Reel (TR) Package / Case: SOT-23-6 Thin, TSOT-23-6 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 4.2A (Ta) Rds On (Max) @ Id, Vgs: 45mOhm @ 4.5A, 4.5V Power Dissipation (Max): 1.2W (Ta) Vgs(th) (Max) @ Id: 1.5V @ 250µA Supplier Device Package: TSOT-26 Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V Vgs (Max): ±8V Drain to Source Voltage (Vdss): 20 V Gate Charge (Qg) (Max) @ Vgs: 28 nC @ 8 V Input Capacitance (Ciss) (Max) @ Vds: 1575 pF @ 10 V | Produkt ist nicht verfügbar | Mindestbestellmenge: 10000 Stücke Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
| DMP2067LVT-7 | Diodes Incorporated | Description: MOSFET P-CH 20V 4.2A TSOT26 Vgs (Max): ±8V Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V Part Status: Active Supplier Device Package: TSOT-26 Vgs(th) (Max) @ Id: 1.5V @ 250µA Power Dissipation (Max): 1.2W (Ta) Rds On (Max) @ Id, Vgs: 45mOhm @ 4.5A, 4.5V Current - Continuous Drain (Id) @ 25°C: 4.2A (Ta) FET Type: P-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: SOT-23-6 Thin, TSOT-23-6 Packaging: Cut Tape (CT) Input Capacitance (Ciss) (Max) @ Vds: 1575 pF @ 10 V Gate Charge (Qg) (Max) @ Vgs: 28 nC @ 8 V Drain to Source Voltage (Vdss): 20 V | auf Bestellung 231442 Stücke: Lieferzeit 10-14 Tag (e) |
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| DMP2067LVT-7 | Diodes Zetex | P-CHANNEL ENHANCEMENT MODE MOSFET | auf Bestellung 231000 Stücke: Lieferzeit 14-21 Tag (e) |
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| DMP2067LVT-7 | Diodes Zetex | P-CHANNEL ENHANCEMENT MODE MOSFET | auf Bestellung 231000 Stücke: Lieferzeit 14-21 Tag (e) |
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| DMP2067LVT-7 | Diodes Incorporated | Description: MOSFET P-CH 20V 4.2A TSOT26 Input Capacitance (Ciss) (Max) @ Vds: 1575 pF @ 10 V Gate Charge (Qg) (Max) @ Vgs: 28 nC @ 8 V Drain to Source Voltage (Vdss): 20 V Vgs (Max): ±8V Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V Part Status: Active Supplier Device Package: TSOT-26 Vgs(th) (Max) @ Id: 1.5V @ 250µA Power Dissipation (Max): 1.2W (Ta) Rds On (Max) @ Id, Vgs: 45mOhm @ 4.5A, 4.5V Current - Continuous Drain (Id) @ 25°C: 4.2A (Ta) FET Type: P-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: SOT-23-6 Thin, TSOT-23-6 Packaging: Tape & Reel (TR) | auf Bestellung 231000 Stücke: Lieferzeit 10-14 Tag (e) |
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| DMP2067LVT-7 | Diodes Incorporated | MOSFETs MOSFET BVDSS: 8V-24V | auf Bestellung 1455 Stücke: Lieferzeit 10-14 Tag (e) |
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