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EPC2204A

Description: TRANS GAN 80V .006OHM AECQ101
Packaging: Tape & Reel (TR)
Package / Case: Die
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: GaNFET (Gallium Nitride)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 29A (Ta)
Rds On (Max) @ Id, Vgs: 6mOhm @ 16A, 5V
Vgs(th) (Max) @ Id: 2.5V @ 4mA
Supplier Device Package: Die
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 5V
Vgs (Max): +6V, -4V
Drain to Source Voltage (Vdss): 80 V
Gate Charge (Qg) (Max) @ Vgs: 7.4 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 851 pF @ 50 V
Voltage Coupled to Gate Charge (Qg) (Max) @ Vgs: 5
Voltage Coupled to Input Capacitance (Ciss) (Max) @ Vds: 50
Grade: Automotive
Qualification: AEC-Q101

auf Bestellung 17500 Stücke:

Lieferzeit 10-14 Tag (e)

2500+	2.44 EUR
7500+	2.36 EUR

Mindestbestellmenge: 2500 Stücke

Im Einkaufswagen Stück im Wert von UAH

EPC2206

Description: GANFET N-CH 80V 90A DIE
Packaging: Tape & Reel (TR)
Package / Case: Die
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: GaNFET (Gallium Nitride)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 90A (Ta)
Rds On (Max) @ Id, Vgs: 2.2mOhm @ 29A, 5V
Vgs(th) (Max) @ Id: 2.5V @ 13mA
Supplier Device Package: Die
Grade: Automotive
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 5V
Vgs (Max): +6V, -4V
Drain to Source Voltage (Vdss): 80 V
Gate Charge (Qg) (Max) @ Vgs: 19 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 1940 pF @ 40 V
Voltage Coupled to Gate Charge (Qg) (Max) @ Vgs: 5
Voltage Coupled to Input Capacitance (Ciss) (Max) @ Vds: 40
Qualification: AEC-Q101

auf Bestellung 385500 Stücke:

Lieferzeit 10-14 Tag (e)

500+	4.74 EUR

Mindestbestellmenge: 500 Stücke

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EPC2206

Efficient Power Conversion

Trans MOSFET N-CH GaN 80V 90A 30-Pin Die T/R

auf Bestellung 5000 Stücke:

Lieferzeit 14-21 Tag (e)

500+	6.44 EUR
1000+	5.45 EUR

Mindestbestellmenge: 500 Stücke

Im Einkaufswagen Stück im Wert von UAH

EPC2206

Description: GANFET N-CH 80V 90A DIE
Packaging: Cut Tape (CT)
Package / Case: Die
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: GaNFET (Gallium Nitride)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 90A (Ta)
Rds On (Max) @ Id, Vgs: 2.2mOhm @ 29A, 5V
Vgs(th) (Max) @ Id: 2.5V @ 13mA
Supplier Device Package: Die
Grade: Automotive
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 5V
Vgs (Max): +6V, -4V
Drain to Source Voltage (Vdss): 80 V
Gate Charge (Qg) (Max) @ Vgs: 19 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 1940 pF @ 40 V
Voltage Coupled to Gate Charge (Qg) (Max) @ Vgs: 5
Voltage Coupled to Input Capacitance (Ciss) (Max) @ Vds: 40
Qualification: AEC-Q101

auf Bestellung 385750 Stücke:

Lieferzeit 10-14 Tag (e)

2+	11.02 EUR
10+	7.34 EUR
50+	5.76 EUR
100+	5.25 EUR

Mindestbestellmenge: 2 Stücke

Im Einkaufswagen Stück im Wert von UAH

EPC2207

Description: TRANS GAN 200V DIE .022OHM
Packaging: Cut Tape (CT)
Package / Case: Die
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: GaNFET (Gallium Nitride)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 14A (Ta)
Rds On (Max) @ Id, Vgs: 22mOhm @ 14A, 5V
Vgs(th) (Max) @ Id: 2.5V @ 2mA
Supplier Device Package: Die
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 5V
Vgs (Max): +6V, -4V
Drain to Source Voltage (Vdss): 200 V
Gate Charge (Qg) (Max) @ Vgs: 5.9 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 600 pF @ 100 V
Voltage Coupled to Gate Charge (Qg) (Max) @ Vgs: 5
Voltage Coupled to Input Capacitance (Ciss) (Max) @ Vds: 100

auf Bestellung 21422 Stücke:

Lieferzeit 10-14 Tag (e)

4+	6.26 EUR
10+	4.07 EUR
50+	3.13 EUR
100+	2.83 EUR
500+	2.3 EUR

Mindestbestellmenge: 4 Stücke

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EPC2207

GaN FETs EPC eGaN FET,200 V, 22 milliohm at 5 V, LGA 3.5 x 2.0

auf Bestellung 8997 Stücke:

Lieferzeit 10-14 Tag (e)

1+	6.15 EUR
10+	3.09 EUR
100+	2.78 EUR
500+	2.26 EUR
1000+	2.24 EUR
2500+	1.89 EUR
5000+	1.87 EUR

Im Einkaufswagen Stück im Wert von UAH

EPC2207

Description: TRANS GAN 200V DIE .022OHM
Packaging: Tape & Reel (TR)
Package / Case: Die
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: GaNFET (Gallium Nitride)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 14A (Ta)
Rds On (Max) @ Id, Vgs: 22mOhm @ 14A, 5V
Vgs(th) (Max) @ Id: 2.5V @ 2mA
Supplier Device Package: Die
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 5V
Vgs (Max): +6V, -4V
Drain to Source Voltage (Vdss): 200 V
Gate Charge (Qg) (Max) @ Vgs: 5.9 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 600 pF @ 100 V
Voltage Coupled to Gate Charge (Qg) (Max) @ Vgs: 5
Voltage Coupled to Input Capacitance (Ciss) (Max) @ Vds: 100

auf Bestellung 20000 Stücke:

Lieferzeit 10-14 Tag (e)

2500+	1.94 EUR
7500+	1.83 EUR

Mindestbestellmenge: 2500 Stücke

Im Einkaufswagen Stück im Wert von UAH

EPC2212

auf Bestellung 2489 Stücke:

Lieferzeit 10-14 Tag (e)

1+	7.58 EUR
10+	3.88 EUR
100+	3.52 EUR
500+	2.93 EUR
2500+	2.49 EUR

Im Einkaufswagen Stück im Wert von UAH

EPC2212

Description: GANFET N-CH 100V 18A DIE
Packaging: Cut Tape (CT)
Package / Case: Die
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: GaNFET (Gallium Nitride)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 18A (Ta)
Rds On (Max) @ Id, Vgs: 13.5mOhm @ 11A, 5V
Vgs(th) (Max) @ Id: 2.5V @ 3mA
Supplier Device Package: Die
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 5V
Vgs (Max): +6V, -4V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 4 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 407 pF @ 50 V
Voltage Coupled to Gate Charge (Qg) (Max) @ Vgs: 5
Voltage Coupled to Input Capacitance (Ciss) (Max) @ Vds: 50
Grade: Automotive
Qualification: AEC-Q101

auf Bestellung 80909 Stücke:

Lieferzeit 10-14 Tag (e)

3+	8.16 EUR
10+	5.37 EUR
50+	4.15 EUR
100+	3.77 EUR
500+	3.15 EUR

Mindestbestellmenge: 3 Stücke

Im Einkaufswagen Stück im Wert von UAH

EPC2212

Description: GANFET N-CH 100V 18A DIE
Packaging: Tape & Reel (TR)
Package / Case: Die
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: GaNFET (Gallium Nitride)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 18A (Ta)
Rds On (Max) @ Id, Vgs: 13.5mOhm @ 11A, 5V
Vgs(th) (Max) @ Id: 2.5V @ 3mA
Supplier Device Package: Die
Grade: Automotive
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 5V
Vgs (Max): +6V, -4V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 4 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 407 pF @ 50 V
Voltage Coupled to Gate Charge (Qg) (Max) @ Vgs: 5
Voltage Coupled to Input Capacitance (Ciss) (Max) @ Vds: 50
Qualification: AEC-Q101

auf Bestellung 80000 Stücke:

Lieferzeit 10-14 Tag (e)

2500+	2.63 EUR
7500+	2.57 EUR

Mindestbestellmenge: 2500 Stücke

Im Einkaufswagen Stück im Wert von UAH

EPC2214

Description: GANFET N-CH 80V 10A DIE
Packaging: Cut Tape (CT)
Package / Case: Die
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: GaNFET (Gallium Nitride)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 10A (Ta)
Rds On (Max) @ Id, Vgs: 20mOhm @ 6A, 5V
Vgs(th) (Max) @ Id: 2.5V @ 2mA
Supplier Device Package: Die
Grade: Automotive
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 5V
Vgs (Max): +6V, -4V
Drain to Source Voltage (Vdss): 80 V
Gate Charge (Qg) (Max) @ Vgs: 2.2 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 238 pF @ 40 V
Qualification: AEC-Q101

auf Bestellung 92440 Stücke:

Lieferzeit 10-14 Tag (e)

5+	4.88 EUR
10+	3.15 EUR
50+	2.39 EUR
100+	2.15 EUR
500+	1.73 EUR

Mindestbestellmenge: 5 Stücke

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EPC2214

GaN FETs EPC eGaN FET, 80 V, 20 milliohm at 5 V, BGA 1.35 x 1.35

auf Bestellung 6995 Stücke:

Lieferzeit 10-14 Tag (e)

1+	4.82 EUR
10+	3.09 EUR
100+	2.12 EUR
500+	1.7 EUR
1000+	1.57 EUR
2500+	1.42 EUR
5000+	1.33 EUR

Im Einkaufswagen Stück im Wert von UAH

EPC2214

Description: GANFET N-CH 80V 10A DIE
Packaging: Tape & Reel (TR)
Package / Case: Die
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: GaNFET (Gallium Nitride)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 10A (Ta)
Rds On (Max) @ Id, Vgs: 20mOhm @ 6A, 5V
Vgs(th) (Max) @ Id: 2.5V @ 2mA
Supplier Device Package: Die
Grade: Automotive
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 5V
Vgs (Max): +6V, -4V
Drain to Source Voltage (Vdss): 80 V
Gate Charge (Qg) (Max) @ Vgs: 2.2 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 238 pF @ 40 V
Qualification: AEC-Q101

auf Bestellung 92000 Stücke:

Lieferzeit 10-14 Tag (e)

2500+	1.52 EUR
7500+	1.38 EUR

Mindestbestellmenge: 2500 Stücke

Im Einkaufswagen Stück im Wert von UAH

EPC2215

GaN FETs EPC eGaN FET,200 V, 8 milliohm at 5 V, LGA 4.6 x 1.6

auf Bestellung 10815 Stücke:

Lieferzeit 10-14 Tag (e)

1+	11.52 EUR
10+	6.2 EUR

Im Einkaufswagen Stück im Wert von UAH

EPC2215

Description: GAN TRANS 200V 8MOHM BUMPED DIE
Packaging: Cut Tape (CT)
Package / Case: Die
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: GaNFET (Gallium Nitride)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 32A (Ta)
Rds On (Max) @ Id, Vgs: 8mOhm @ 20A, 5V
Vgs(th) (Max) @ Id: 2.5V @ 6mA
Supplier Device Package: Die
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 5V
Vgs (Max): +6V, -4V
Drain to Source Voltage (Vdss): 200 V
Gate Charge (Qg) (Max) @ Vgs: 17.7 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 1790 pF @ 100 V
Voltage Coupled to Gate Charge (Qg) (Max) @ Vgs: 5
Voltage Coupled to Input Capacitance (Ciss) (Max) @ Vds: 100

auf Bestellung 68025 Stücke:

Lieferzeit 10-14 Tag (e)

2+	13.28 EUR
10+	8.92 EUR
50+	7.06 EUR
100+	6.46 EUR
500+	6.05 EUR

Mindestbestellmenge: 2 Stücke

Im Einkaufswagen Stück im Wert von UAH

EPC2215

Description: GAN TRANS 200V 8MOHM BUMPED DIE
Packaging: Tape & Reel (TR)
Package / Case: Die
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: GaNFET (Gallium Nitride)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 32A (Ta)
Rds On (Max) @ Id, Vgs: 8mOhm @ 20A, 5V
Vgs(th) (Max) @ Id: 2.5V @ 6mA
Supplier Device Package: Die
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 5V
Vgs (Max): +6V, -4V
Drain to Source Voltage (Vdss): 200 V
Gate Charge (Qg) (Max) @ Vgs: 17.7 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 1790 pF @ 100 V
Voltage Coupled to Gate Charge (Qg) (Max) @ Vgs: 5
Voltage Coupled to Input Capacitance (Ciss) (Max) @ Vds: 100

auf Bestellung 67500 Stücke:

Lieferzeit 10-14 Tag (e)

2500+	4.94 EUR

Mindestbestellmenge: 2500 Stücke

Im Einkaufswagen Stück im Wert von UAH

EPC2216

Description: GANFET N-CH 15V 3.4A DIE
Packaging: Tape & Reel (TR)
Package / Case: Die
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: GaNFET (Gallium Nitride)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 3.4A (Ta)
Rds On (Max) @ Id, Vgs: 26mOhm @ 1.5A, 5V
Vgs(th) (Max) @ Id: 2.5V @ 1mA
Supplier Device Package: Die
Grade: Automotive
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 5V
Vgs (Max): +6V, -4V
Drain to Source Voltage (Vdss): 15 V
Gate Charge (Qg) (Max) @ Vgs: 1.1 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 118 pF @ 7.5 V
Qualification: AEC-Q101

auf Bestellung 30000 Stücke:

Lieferzeit 10-14 Tag (e)

2500+	1.01 EUR

Mindestbestellmenge: 2500 Stücke

Im Einkaufswagen Stück im Wert von UAH

EPC2216

Description: GANFET N-CH 15V 3.4A DIE
Packaging: Cut Tape (CT)
Package / Case: Die
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: GaNFET (Gallium Nitride)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 3.4A (Ta)
Rds On (Max) @ Id, Vgs: 26mOhm @ 1.5A, 5V
Vgs(th) (Max) @ Id: 2.5V @ 1mA
Supplier Device Package: Die
Grade: Automotive
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 5V
Vgs (Max): +6V, -4V
Drain to Source Voltage (Vdss): 15 V
Gate Charge (Qg) (Max) @ Vgs: 1.1 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 118 pF @ 7.5 V
Qualification: AEC-Q101

auf Bestellung 31656 Stücke:

Lieferzeit 10-14 Tag (e)

6+	3.86 EUR
10+	2.46 EUR
100+	1.67 EUR
500+	1.32 EUR
1000+	1.21 EUR

Mindestbestellmenge: 6 Stücke

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EPC2216

GaN FETs EPC eGaN FET,15 V, 26 milliohm at 5 V, BGA 0.85 x 1.2

auf Bestellung 4917 Stücke:

Lieferzeit 10-14 Tag (e)

1+	3.86 EUR
10+	1.87 EUR
100+	1.67 EUR
500+	1.32 EUR
1000+	1.26 EUR
2500+	1.09 EUR
5000+	0.99 EUR

Im Einkaufswagen Stück im Wert von UAH

EPC2218

Description: GANFET N-CH 100V DIE
Packaging: Tape & Reel (TR)
Package / Case: Die
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: GaNFET (Gallium Nitride)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 60A (Ta)
Rds On (Max) @ Id, Vgs: 3.2mOhm @ 25A, 5V
Vgs(th) (Max) @ Id: 2.5V @ 7mA
Supplier Device Package: Die
Part Status: Not For New Designs
Drive Voltage (Max Rds On, Min Rds On): 5V
Vgs (Max): +6V, -4V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 13.6 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 1570 pF @ 50 V
Voltage Coupled to Gate Charge (Qg) (Max) @ Vgs: 5
Voltage Coupled to Input Capacitance (Ciss) (Max) @ Vds: 50

auf Bestellung 20000 Stücke:

Lieferzeit 10-14 Tag (e)

1000+	6.08 EUR
3000+	6.07 EUR

Mindestbestellmenge: 1000 Stücke

Im Einkaufswagen Stück im Wert von UAH

EPC2218

Produkt ist nicht verfügbar

Im Einkaufswagen Stück im Wert von UAH

EPC2218

Description: GANFET N-CH 100V DIE
Packaging: Cut Tape (CT)
Package / Case: Die
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: GaNFET (Gallium Nitride)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 60A (Ta)
Rds On (Max) @ Id, Vgs: 3.2mOhm @ 25A, 5V
Vgs(th) (Max) @ Id: 2.5V @ 7mA
Supplier Device Package: Die
Part Status: Not For New Designs
Drive Voltage (Max Rds On, Min Rds On): 5V
Vgs (Max): +6V, -4V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 13.6 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 1570 pF @ 50 V
Voltage Coupled to Gate Charge (Qg) (Max) @ Vgs: 5
Voltage Coupled to Input Capacitance (Ciss) (Max) @ Vds: 50

auf Bestellung 20026 Stücke:

Lieferzeit 10-14 Tag (e)

2+	15.49 EUR
10+	10.5 EUR
50+	8.35 EUR
100+	7.66 EUR
500+	7.43 EUR

Mindestbestellmenge: 2 Stücke

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EPC2218A

Description: TRANS GAN 80V .0032OHM AECQ101
Packaging: Tape & Reel (TR)
Package / Case: Die
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: GaNFET (Gallium Nitride)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 60A (Ta)
Rds On (Max) @ Id, Vgs: 3.2mOhm @ 25A, 5V
Vgs(th) (Max) @ Id: 2.5V @ 7mA
Supplier Device Package: Die
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 5V
Vgs (Max): +6V, -4V
Drain to Source Voltage (Vdss): 80 V
Gate Charge (Qg) (Max) @ Vgs: 13.6 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 1570 pF @ 50 V
Grade: Automotive
Qualification: AEC-Q101

auf Bestellung 16000 Stücke:

Lieferzeit 10-14 Tag (e)

1000+	4.62 EUR
3000+	4.49 EUR

Mindestbestellmenge: 1000 Stücke

Im Einkaufswagen Stück im Wert von UAH

EPC2218A

Description: TRANS GAN 80V .0032OHM AECQ101
Packaging: Cut Tape (CT)
Package / Case: Die
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: GaNFET (Gallium Nitride)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 60A (Ta)
Rds On (Max) @ Id, Vgs: 3.2mOhm @ 25A, 5V
Vgs(th) (Max) @ Id: 2.5V @ 7mA
Supplier Device Package: Die
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 5V
Vgs (Max): +6V, -4V
Drain to Source Voltage (Vdss): 80 V
Gate Charge (Qg) (Max) @ Vgs: 13.6 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 1570 pF @ 50 V
Grade: Automotive
Qualification: AEC-Q101

auf Bestellung 16446 Stücke:

Lieferzeit 10-14 Tag (e)

2+	12.9 EUR
10+	8.66 EUR
50+	6.84 EUR
100+	6.26 EUR
500+	5.82 EUR

Mindestbestellmenge: 2 Stücke

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EPC2218A

GaN FETs EPC eGaN FET,80 V, 3.2 milliohm at 5 V, LGA 3.5 x 1.95

auf Bestellung 4984 Stücke:

Lieferzeit 10-14 Tag (e)

1+	12.7 EUR
10+	6.75 EUR
100+	6.15 EUR
500+	5.71 EUR
1000+	4.61 EUR

Im Einkaufswagen Stück im Wert von UAH

EPC2219

Description: TRANS GAN 65V AECQ101 3.3OHM DIE
Input Capacitance (Ciss) (Max) @ Vds: 10 pF @ 32.5 V
Gate Charge (Qg) (Max) @ Vgs: 0.064 nC @ 5 V
Drain to Source Voltage (Vdss): 65 V
Drive Voltage (Max Rds On, Min Rds On): 5V
Part Status: Active
Supplier Device Package: Die
Vgs(th) (Max) @ Id: 2.5V @ 100µA
Rds On (Max) @ Id, Vgs: 3.3Ohm @ 59mA, 5V
Current - Continuous Drain (Id) @ 25°C: 500mA (Ta)
FET Type: N-Channel
Technology: GaNFET (Gallium Nitride)
Operating Temperature: -40°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: Die
Packaging: Cut Tape (CT)

auf Bestellung 7999 Stücke:

Lieferzeit 10-14 Tag (e)

8+	2.7 EUR
10+	2.21 EUR
100+	1.73 EUR
500+	1.46 EUR
1000+	1.19 EUR

Mindestbestellmenge: 8 Stücke

Im Einkaufswagen Stück im Wert von UAH

EPC2219

Description: TRANS GAN 65V AECQ101 3.3OHM DIE
Input Capacitance (Ciss) (Max) @ Vds: 10 pF @ 32.5 V
Gate Charge (Qg) (Max) @ Vgs: 0.064 nC @ 5 V
Drain to Source Voltage (Vdss): 65 V
Drive Voltage (Max Rds On, Min Rds On): 5V
Part Status: Active
Supplier Device Package: Die
Vgs(th) (Max) @ Id: 2.5V @ 100µA
Rds On (Max) @ Id, Vgs: 3.3Ohm @ 59mA, 5V
Current - Continuous Drain (Id) @ 25°C: 500mA (Ta)
FET Type: N-Channel
Technology: GaNFET (Gallium Nitride)
Operating Temperature: -40°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: Die
Packaging: Tape & Reel (TR)

auf Bestellung 5000 Stücke:

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2500+	1.12 EUR
5000+	1.07 EUR

Mindestbestellmenge: 2500 Stücke

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EPC2221

Description: GANFET 2N-CH 100V 5A DIE
Packaging: Cut Tape (CT)
Package / Case: Die
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual) Common Source
Operating Temperature: 150°C (TJ)
Technology: GaNFET (Gallium Nitride)
Drain to Source Voltage (Vdss): 100V
Current - Continuous Drain (Id) @ 25°C: 5A
Supplier Device Package: Die
Part Status: Active

auf Bestellung 4109 Stücke:

Lieferzeit 10-14 Tag (e)

4+	6.64 EUR
10+	4.34 EUR
100+	3.03 EUR
500+	2.46 EUR
1000+	2.28 EUR

Mindestbestellmenge: 4 Stücke

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EPC2221

GaN FETs EPC AEC eGaN Dual FET,100 V, 58 milliohm at 5 V, BGA 1.35 x 1.35

Produkt ist nicht verfügbar

Im Einkaufswagen Stück im Wert von UAH

EPC2221

Description: GANFET 2N-CH 100V 5A DIE
Packaging: Tape & Reel (TR)
Package / Case: Die
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual) Common Source
Operating Temperature: 150°C (TJ)
Technology: GaNFET (Gallium Nitride)
Drain to Source Voltage (Vdss): 100V
Current - Continuous Drain (Id) @ 25°C: 5A
Supplier Device Package: Die
Part Status: Active

auf Bestellung 2500 Stücke:

Lieferzeit 10-14 Tag (e)

2500+	2.17 EUR

Mindestbestellmenge: 2500 Stücke

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EPC2234

GaN FETs EPC eGaN FET,160 V, 8 milliohm at 5 V, BGA 4.6 x 2.6

auf Bestellung 457 Stücke:

Lieferzeit 10-14 Tag (e)

1+	24.66 EUR
10+	14.03 EUR
100+	14.01 EUR
500+	12.13 EUR
1000+	11.9 EUR

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EPC2234

Description: TRANS GAN AEC 160V .008OHM 24BGA
Packaging: Cut Tape (CT)
Package / Case: 24-VFBGA
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: GaNFET (Gallium Nitride)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 48A (Ta)
Rds On (Max) @ Id, Vgs: 8mOhm @ 20A, 5V
Vgs(th) (Max) @ Id: 2.5V @ 7mA
Supplier Device Package: 24-BGA (4.6x2.6)
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 5V
Vgs (Max): +5.5V, -4V
Drain to Source Voltage (Vdss): 160 V
Gate Charge (Qg) (Max) @ Vgs: 13.8 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 1386 pF @ 100 V
Qualification: AEC-Q101

auf Bestellung 3514 Stücke:

Lieferzeit 10-14 Tag (e)

1+	25.07 EUR
10+	17.5 EUR
50+	14.27 EUR
100+	14.24 EUR

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EPC2234

Description: TRANS GAN AEC 160V .008OHM 24BGA
Packaging: Tape & Reel (TR)
Package / Case: 24-VFBGA
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: GaNFET (Gallium Nitride)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 48A (Ta)
Rds On (Max) @ Id, Vgs: 8mOhm @ 20A, 5V
Vgs(th) (Max) @ Id: 2.5V @ 7mA
Supplier Device Package: 24-BGA (4.6x2.6)
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 5V
Vgs (Max): +5.5V, -4V
Drain to Source Voltage (Vdss): 160 V
Gate Charge (Qg) (Max) @ Vgs: 13.8 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 1386 pF @ 100 V
Qualification: AEC-Q101

auf Bestellung 3500 Stücke:

Lieferzeit 10-14 Tag (e)

500+	12.33 EUR
1500+	11.64 EUR

Mindestbestellmenge: 500 Stücke

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EPC2252

Description: TRANSGAN 80V.011OHM AECQ101 9BGA
Packaging: Tape & Reel (TR)
Package / Case: Die
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: GaNFET (Gallium Nitride)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 8.2A (Ta)
Rds On (Max) @ Id, Vgs: 11mOhm @ 11A, 5V
Vgs(th) (Max) @ Id: 2.5V @ 2.5mA
Supplier Device Package: Die
Grade: Automotive
Vgs (Max): +6V, -4V
Drain to Source Voltage (Vdss): 80 V
Gate Charge (Qg) (Max) @ Vgs: 4.3 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 576 pF @ 50 V
Qualification: AEC-Q101

auf Bestellung 47500 Stücke:

Lieferzeit 10-14 Tag (e)

2500+	1.51 EUR
7500+	1.37 EUR

Mindestbestellmenge: 2500 Stücke

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EPC2252

Description: TRANSGAN 80V.011OHM AECQ101 9BGA
Packaging: Cut Tape (CT)
Package / Case: Die
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: GaNFET (Gallium Nitride)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 8.2A (Ta)
Rds On (Max) @ Id, Vgs: 11mOhm @ 11A, 5V
Vgs(th) (Max) @ Id: 2.5V @ 2.5mA
Supplier Device Package: Die
Grade: Automotive
Vgs (Max): +6V, -4V
Drain to Source Voltage (Vdss): 80 V
Gate Charge (Qg) (Max) @ Vgs: 4.3 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 576 pF @ 50 V
Qualification: AEC-Q101

auf Bestellung 47743 Stücke:

Lieferzeit 10-14 Tag (e)

5+	5.07 EUR
10+	3.27 EUR
50+	2.5 EUR
100+	2.25 EUR
500+	1.8 EUR

Mindestbestellmenge: 5 Stücke

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EPC2252

GaN FETs eGaN FET, 80V, 11milliohm at 5 V, 1.5 x 1.5mm BGA

auf Bestellung 11391 Stücke:

Lieferzeit 10-14 Tag (e)

1+	4.96 EUR
10+	2.48 EUR
100+	2.23 EUR
500+	1.77 EUR
1000+	1.7 EUR
2500+	1.49 EUR
5000+	1.4 EUR

Im Einkaufswagen Stück im Wert von UAH

EPC2302

Description: TRANS GAN 100V DIE .0018OHM
Packaging: Tape & Reel (TR)
Package / Case: 7-PowerWQFN
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: GaNFET (Gallium Nitride)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 101A (Ta)
Rds On (Max) @ Id, Vgs: 1.8mOhm @ 50A, 5V
Vgs(th) (Max) @ Id: 2.5V @ 14mA
Supplier Device Package: 7-QFN (3x5)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 5V
Vgs (Max): +6V, -4V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 23 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 3200 pF @ 50 V
Voltage Coupled to Gate Charge (Qg) (Max) @ Vgs: 5
Voltage Coupled to Input Capacitance (Ciss) (Max) @ Vds: 50

auf Bestellung 80800 Stücke:

Lieferzeit 10-14 Tag (e)

3000+	6.72 EUR

Mindestbestellmenge: 3000 Stücke

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EPC2302

GaN FETs EPC eGaN FET,100 V, 1.8 milliohm at 5 V, 3 mm x 5 mm QFN

auf Bestellung 1097 Stücke:

Lieferzeit 10-14 Tag (e)

1+	15.46 EUR
10+	10.52 EUR
100+	7.71 EUR
500+	7.58 EUR
1000+	6.95 EUR
3000+	6.5 EUR

Im Einkaufswagen Stück im Wert von UAH

EPC2302

Description: TRANS GAN 100V DIE .0018OHM
Packaging: Cut Tape (CT)
Package / Case: 7-PowerWQFN
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: GaNFET (Gallium Nitride)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 101A (Ta)
Rds On (Max) @ Id, Vgs: 1.8mOhm @ 50A, 5V
Vgs(th) (Max) @ Id: 2.5V @ 14mA
Supplier Device Package: 7-QFN (3x5)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 5V
Vgs (Max): +6V, -4V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 23 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 3200 pF @ 50 V
Voltage Coupled to Gate Charge (Qg) (Max) @ Vgs: 5
Voltage Coupled to Input Capacitance (Ciss) (Max) @ Vds: 50

auf Bestellung 81099 Stücke:

Lieferzeit 10-14 Tag (e)

2+	16.65 EUR
10+	11.32 EUR
50+	9.04 EUR
100+	8.31 EUR
500+	8.16 EUR

Mindestbestellmenge: 2 Stücke

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EPC2302ENGRT

Description: TRANS GAN 100V DIE .0018OHM
Packaging: Tape & Reel (TR)
Package / Case: 7-PowerWQFN
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: GaNFET (Gallium Nitride)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 101A (Ta)
Rds On (Max) @ Id, Vgs: 1.8mOhm @ 50A, 5V
Vgs(th) (Max) @ Id: 2.5V @ 14mA
Supplier Device Package: 7-QFN (3x5)
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 5V
Vgs (Max): +6V, -4V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 23 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 3200 pF @ 50 V

Produkt ist nicht verfügbar

Mindestbestellmenge: 12000 Stücke

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EPC2304

Description: TRANS GAN 200V .005OHM 7QFN
Packaging: Tape & Reel (TR)
Package / Case: 7-PowerWQFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: GaNFET (Gallium Nitride)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 102A (Ta)
Rds On (Max) @ Id, Vgs: 3.1mOhm @ 32A, 5V
Vgs(th) (Max) @ Id: 2.5V @ 8mA
Supplier Device Package: 7-QFN (3x5)
Drive Voltage (Max Rds On, Min Rds On): 5V
Vgs (Max): +6V, -4V
Drain to Source Voltage (Vdss): 200 V
Gate Charge (Qg) (Max) @ Vgs: 24 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 3195 pF @ 100 V

auf Bestellung 42000 Stücke:

Lieferzeit 10-14 Tag (e)

3000+	7.16 EUR

Mindestbestellmenge: 3000 Stücke

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EPC2304

Description: TRANS GAN 200V .005OHM 7QFN
Packaging: Cut Tape (CT)
Package / Case: 7-PowerWQFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: GaNFET (Gallium Nitride)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 102A (Ta)
Rds On (Max) @ Id, Vgs: 3.1mOhm @ 32A, 5V
Vgs(th) (Max) @ Id: 2.5V @ 8mA
Supplier Device Package: 7-QFN (3x5)
Drive Voltage (Max Rds On, Min Rds On): 5V
Vgs (Max): +6V, -4V
Drain to Source Voltage (Vdss): 200 V
Gate Charge (Qg) (Max) @ Vgs: 24 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 3195 pF @ 100 V

auf Bestellung 46007 Stücke:

Lieferzeit 10-14 Tag (e)

2+	16.56 EUR
10+	11.29 EUR
50+	9.04 EUR
100+	8.32 EUR
500+	8.27 EUR

Mindestbestellmenge: 2 Stücke

Im Einkaufswagen Stück im Wert von UAH

EPC2304

GaN FETs EPC eGaN FET, 200 V, 5 milliohm at 5 V, 3 mm x 5 mm FCQFN

auf Bestellung 6130 Stücke:

Lieferzeit 10-14 Tag (e)

1+	16.29 EUR
10+	8.9 EUR
100+	8.19 EUR
500+	8.15 EUR
1000+	7.46 EUR
3000+	6.91 EUR

Im Einkaufswagen Stück im Wert von UAH

EPC2304ENGRT

Description: TRANS GAN 200V .005OHM 3X5PQFN
Packaging: Tape & Reel (TR)
Part Status: Active
Package / Case: 7-PowerWQFN
Mounting Type: Surface Mount
Supplier Device Package: 7-QFN (3x5)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: GaNFET (Gallium Nitride)
FET Type: N-Channel
Drive Voltage (Max Rds On, Min Rds On): 5V
Vgs (Max): +6V, -4V
Drain to Source Voltage (Vdss): 200 V
Gate Charge (Qg) (Max) @ Vgs: 24 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 3195 pF @ 100 V
Current - Continuous Drain (Id) @ 25°C: 102A (Ta)
Rds On (Max) @ Id, Vgs: 3.1mOhm @ 32A, 5V
Vgs(th) (Max) @ Id: 2.5V @ 8mA

Produkt ist nicht verfügbar

Mindestbestellmenge: 10000 Stücke

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EPC2304ENGRT

Description: TRANS GAN 200V .005OHM 3X5PQFN
Packaging: Cut Tape (CT)
Part Status: Active
Package / Case: 7-PowerWQFN
Mounting Type: Surface Mount
Supplier Device Package: 7-QFN (3x5)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: GaNFET (Gallium Nitride)
FET Type: N-Channel
Drive Voltage (Max Rds On, Min Rds On): 5V
Vgs (Max): +6V, -4V
Drain to Source Voltage (Vdss): 200 V
Gate Charge (Qg) (Max) @ Vgs: 24 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 3195 pF @ 100 V
Current - Continuous Drain (Id) @ 25°C: 102A (Ta)
Rds On (Max) @ Id, Vgs: 3.1mOhm @ 32A, 5V
Vgs(th) (Max) @ Id: 2.5V @ 8mA

Produkt ist nicht verfügbar

Im Einkaufswagen Stück im Wert von UAH

EPC2305

Description: TRANS GAN 150V .0022OHM 3X5 7QFN
Packaging: Cut Tape (CT)
Package / Case: 7-PowerWQFN
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: GaNFET (Gallium Nitride)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 102A (Tj)
Rds On (Max) @ Id, Vgs: 3mOhm @ 30A, 5V
Vgs(th) (Max) @ Id: 2.5V @ 11mA
Supplier Device Package: 7-QFN (3x5)
Drive Voltage (Max Rds On, Min Rds On): 5V
Vgs (Max): +6V, -4V
Drain to Source Voltage (Vdss): 150 V
Gate Charge (Qg) (Max) @ Vgs: 28.6 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 4165 pF @ 75 V

auf Bestellung 38901 Stücke:

Lieferzeit 10-14 Tag (e)

2+	16.12 EUR
10+	10.98 EUR
50+	8.78 EUR
100+	8.08 EUR
500+	7.98 EUR

Mindestbestellmenge: 2 Stücke

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EPC2305

Description: TRANS GAN 150V .0022OHM 3X5 7QFN
Packaging: Tape & Reel (TR)
Package / Case: 7-PowerWQFN
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: GaNFET (Gallium Nitride)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 102A (Tj)
Rds On (Max) @ Id, Vgs: 3mOhm @ 30A, 5V
Vgs(th) (Max) @ Id: 2.5V @ 11mA
Supplier Device Package: 7-QFN (3x5)
Drive Voltage (Max Rds On, Min Rds On): 5V
Vgs (Max): +6V, -4V
Drain to Source Voltage (Vdss): 150 V
Gate Charge (Qg) (Max) @ Vgs: 28.6 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 4165 pF @ 75 V

auf Bestellung 36000 Stücke:

Lieferzeit 10-14 Tag (e)

3000+	6.52 EUR

Mindestbestellmenge: 3000 Stücke

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EPC2305

GaN FETs EPC eGaN FET,150 V, 2.2 milliohm typ at 5 V, QFN 3 x 5mm

auf Bestellung 14040 Stücke:

Lieferzeit 10-14 Tag (e)

1+	15.87 EUR
10+	8.65 EUR
100+	7.96 EUR
500+	7.88 EUR
1000+	7.2 EUR
3000+	6.68 EUR

Im Einkaufswagen Stück im Wert von UAH

EPC2305ENGRT

Description: TRANS GAN 150V .003OHM 3X5MM QFN
Packaging: Cut Tape (CT)
Package / Case: 7-PowerWQFN
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: GaNFET (Gallium Nitride)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 102A (Tj)
Rds On (Max) @ Id, Vgs: 3mOhm @ 30A, 5V
Vgs(th) (Max) @ Id: 2.5V @ 11mA
Supplier Device Package: 7-QFN (3x5)
Drive Voltage (Max Rds On, Min Rds On): 5V
Vgs (Max): +6V, -4V
Drain to Source Voltage (Vdss): 150 V
Gate Charge (Qg) (Max) @ Vgs: 28.6 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 4165 pF @ 75 V

Produkt ist nicht verfügbar

Im Einkaufswagen Stück im Wert von UAH

EPC2305ENGRT

Description: TRANS GAN 150V .003OHM 3X5MM QFN
Packaging: Tape & Reel (TR)
Package / Case: 7-PowerWQFN
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: GaNFET (Gallium Nitride)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 102A (Tj)
Rds On (Max) @ Id, Vgs: 3mOhm @ 30A, 5V
Vgs(th) (Max) @ Id: 2.5V @ 11mA
Supplier Device Package: 7-QFN (3x5)
Drive Voltage (Max Rds On, Min Rds On): 5V
Vgs (Max): +6V, -4V
Drain to Source Voltage (Vdss): 150 V
Gate Charge (Qg) (Max) @ Vgs: 28.6 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 4165 pF @ 75 V

Produkt ist nicht verfügbar

Mindestbestellmenge: 3000 Stücke

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EPC2306

GaN FETs EPC eGaN FET,100 V, 3.1 milliohm at 5 V, 3 mm x 5 mm QFN

auf Bestellung 11028 Stücke:

Lieferzeit 10-14 Tag (e)

1+	9.82 EUR
10+	5.11 EUR
100+	4.66 EUR
500+	4.14 EUR
1000+	4 EUR
3000+	3.67 EUR
6000+	3.52 EUR

Im Einkaufswagen Stück im Wert von UAH

EPC2306

Description: TRANS GAN 100V .0038OHM 3X5PQFN
Packaging: Cut Tape (CT)
Package / Case: 7-PowerWQFN
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: GaNFET (Gallium Nitride)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 48A (Ta)
Rds On (Max) @ Id, Vgs: 3.8mOhm @ 25A, 5V
Vgs(th) (Max) @ Id: 2.5V @ 7mA
Supplier Device Package: 7-QFN (3x5)
Drive Voltage (Max Rds On, Min Rds On): 5V
Vgs (Max): +6V, -4V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 16.3 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 2366 pF @ 50 V

auf Bestellung 14919 Stücke:

Lieferzeit 10-14 Tag (e)

3+	10 EUR
10+	6.63 EUR
50+	5.19 EUR
100+	4.72 EUR
500+	4.2 EUR

Mindestbestellmenge: 3 Stücke

Im Einkaufswagen Stück im Wert von UAH

EPC2306

Description: TRANS GAN 100V .0038OHM 3X5PQFN
Packaging: Tape & Reel (TR)
Package / Case: 7-PowerWQFN
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: GaNFET (Gallium Nitride)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 48A (Ta)
Rds On (Max) @ Id, Vgs: 3.8mOhm @ 25A, 5V
Vgs(th) (Max) @ Id: 2.5V @ 7mA
Supplier Device Package: 7-QFN (3x5)
Drive Voltage (Max Rds On, Min Rds On): 5V
Vgs (Max): +6V, -4V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 16.3 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 2366 pF @ 50 V

auf Bestellung 9000 Stücke:

Lieferzeit 10-14 Tag (e)

3000+	3.44 EUR

Mindestbestellmenge: 3000 Stücke

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EPC23068 S R6PA

CONFIG IC EPC23068 TQFP32 SR6PA IND TRAY 1

Produkt ist nicht verfügbar

Mindestbestellmenge: 250 Stücke

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EPC2306ENGRT

Description: TRANS GAN 100V .0038OHM3X5MM QFN
Packaging: Tape & Reel (TR)
Package / Case: 7-PowerWQFN
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: GaNFET (Gallium Nitride)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 48A (Ta)
Rds On (Max) @ Id, Vgs: 3.8mOhm @ 25A, 5V
Vgs(th) (Max) @ Id: 2.5V @ 7mA
Supplier Device Package: 7-QFN (3x5)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 5V
Vgs (Max): +6V, -4V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 16.3 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 2366 pF @ 50 V

Produkt ist nicht verfügbar

Im Einkaufswagen Stück im Wert von UAH

EPC2306ENGRT

Description: TRANS GAN 100V .0038OHM3X5MM QFN
Packaging: Cut Tape (CT)
Package / Case: 7-PowerWQFN
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: GaNFET (Gallium Nitride)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 48A (Ta)
Rds On (Max) @ Id, Vgs: 3.8mOhm @ 25A, 5V
Vgs(th) (Max) @ Id: 2.5V @ 7mA
Supplier Device Package: 7-QFN (3x5)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 5V
Vgs (Max): +6V, -4V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 16.3 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 2366 pF @ 50 V

auf Bestellung 375 Stücke:

Lieferzeit 10-14 Tag (e)

2+	11.58 EUR
10+	7.78 EUR
100+	5.65 EUR

Mindestbestellmenge: 2 Stücke

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EPC2307

Description: TRANS GAN 200V .010OHM 7QFN
Packaging: Tape & Reel (TR)
Package / Case: 7-PowerWQFN
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: GaNFET (Gallium Nitride)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 48A (Ta)
Rds On (Max) @ Id, Vgs: 10mOhm @ 16A, 5V
Vgs(th) (Max) @ Id: 2.5V @ 4mA
Supplier Device Package: 7-QFN (3x5)
Drive Voltage (Max Rds On, Min Rds On): 5V
Vgs (Max): +6V, -4V
Drain to Source Voltage (Vdss): 200 V
Gate Charge (Qg) (Max) @ Vgs: 10.6 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 1401 pF @ 100 V

auf Bestellung 6000 Stücke:

Lieferzeit 10-14 Tag (e)

3000+	3.44 EUR

Mindestbestellmenge: 3000 Stücke

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EPC2307

GaN FETs EPC eGaN FET,200 V, 10 milliohm at 5 V, 3 mm x 5 mm QFN

auf Bestellung 13674 Stücke:

Lieferzeit 10-14 Tag (e)

1+	9.82 EUR
10+	5.11 EUR
100+	4.66 EUR
500+	4.14 EUR
1000+	4 EUR
3000+	3.67 EUR
6000+	3.52 EUR

Im Einkaufswagen Stück im Wert von UAH

EPC2307

Description: TRANS GAN 200V .010OHM 7QFN
Packaging: Cut Tape (CT)
Package / Case: 7-PowerWQFN
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: GaNFET (Gallium Nitride)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 48A (Ta)
Rds On (Max) @ Id, Vgs: 10mOhm @ 16A, 5V
Vgs(th) (Max) @ Id: 2.5V @ 4mA
Supplier Device Package: 7-QFN (3x5)
Drive Voltage (Max Rds On, Min Rds On): 5V
Vgs (Max): +6V, -4V
Drain to Source Voltage (Vdss): 200 V
Gate Charge (Qg) (Max) @ Vgs: 10.6 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 1401 pF @ 100 V

auf Bestellung 8073 Stücke:

Lieferzeit 10-14 Tag (e)

3+	10 EUR
10+	6.63 EUR
50+	5.19 EUR
100+	4.72 EUR
500+	4.2 EUR

Mindestbestellmenge: 3 Stücke

Im Einkaufswagen Stück im Wert von UAH

EPC2307ENGRT

Description: TRANS GAN 200V .010OHM 7QFN
Packaging: Cut Tape (CT)
Package / Case: 7-PowerWQFN
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: GaNFET (Gallium Nitride)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 48A (Ta)
Rds On (Max) @ Id, Vgs: 10mOhm @ 16A, 10V
Vgs(th) (Max) @ Id: 2.5V @ 4mA
Supplier Device Package: 7-QFN (3x5)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 5V
Vgs (Max): +6V, -4V
Drain to Source Voltage (Vdss): 200 V
Gate Charge (Qg) (Max) @ Vgs: 10.6 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 1401 pF @ 100 V

auf Bestellung 17984 Stücke:

Lieferzeit 10-14 Tag (e)

2+	14.2 EUR
10+	9.63 EUR
100+	7.03 EUR
500+	6.81 EUR

Mindestbestellmenge: 2 Stücke

Im Einkaufswagen Stück im Wert von UAH

EPC2307ENGRT

Description: TRANS GAN 200V .010OHM 7QFN
Packaging: Tape & Reel (TR)
Package / Case: 7-PowerWQFN
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: GaNFET (Gallium Nitride)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 48A (Ta)
Rds On (Max) @ Id, Vgs: 10mOhm @ 16A, 10V
Vgs(th) (Max) @ Id: 2.5V @ 4mA
Supplier Device Package: 7-QFN (3x5)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 5V
Vgs (Max): +6V, -4V
Drain to Source Voltage (Vdss): 200 V
Gate Charge (Qg) (Max) @ Vgs: 10.6 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 1401 pF @ 100 V

auf Bestellung 9000 Stücke:

Lieferzeit 10-14 Tag (e)

3000+	5.56 EUR

Mindestbestellmenge: 3000 Stücke

Im Einkaufswagen Stück im Wert von UAH

EPC2308

Description: TRANS GAN 150V .006OHM 7QFN
Packaging: Cut Tape (CT)
Package / Case: 7-PowerWQFN
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: GaNFET (Gallium Nitride)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 48A (Ta)
Rds On (Max) @ Id, Vgs: 6mOhm @ 15A, 5V
Vgs(th) (Max) @ Id: 2.5V @ 5mA
Supplier Device Package: 7-QFN (3x5)
Drive Voltage (Max Rds On, Min Rds On): 5V
Vgs (Max): +6V, -4V
Drain to Source Voltage (Vdss): 150 V
Gate Charge (Qg) (Max) @ Vgs: 13.8 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 2103 pF @ 75 V

auf Bestellung 5276 Stücke:

Lieferzeit 10-14 Tag (e)

2+	10.85 EUR
10+	7.21 EUR
50+	5.65 EUR
100+	5.15 EUR
500+	4.61 EUR

Mindestbestellmenge: 2 Stücke

Im Einkaufswagen Stück im Wert von UAH

EPC2308

GaN FETs EPC eGaN FET,150 V, 6 milliohm at 5 V, 3 mm x 5 mm QFN

auf Bestellung 5807 Stücke:

Lieferzeit 10-14 Tag (e)

1+	10.06 EUR
10+	5.24 EUR
100+	4.8 EUR
500+	4.3 EUR
1000+	4.13 EUR
3000+	3.8 EUR
6000+	3.62 EUR

Im Einkaufswagen Stück im Wert von UAH

EPC2308

Description: TRANS GAN 150V .006OHM 7QFN
Packaging: Tape & Reel (TR)
Package / Case: 7-PowerWQFN
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: GaNFET (Gallium Nitride)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 48A (Ta)
Rds On (Max) @ Id, Vgs: 6mOhm @ 15A, 5V
Vgs(th) (Max) @ Id: 2.5V @ 5mA
Supplier Device Package: 7-QFN (3x5)
Drive Voltage (Max Rds On, Min Rds On): 5V
Vgs (Max): +6V, -4V
Drain to Source Voltage (Vdss): 150 V
Gate Charge (Qg) (Max) @ Vgs: 13.8 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 2103 pF @ 75 V

auf Bestellung 3000 Stücke:

Lieferzeit 10-14 Tag (e)

3000+	3.55 EUR

Mindestbestellmenge: 3000 Stücke

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EPC2308ENGRT

Description: TRANS GAN 150V .006OHM 3X5PQFN
Packaging: Cut Tape (CT)
Package / Case: 7-PowerWQFN
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: GaNFET (Gallium Nitride)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 48A (Tc)
Rds On (Max) @ Id, Vgs: 6mOhm @ 15A, 5V
Vgs(th) (Max) @ Id: 2.5V @ 5mA
Supplier Device Package: 7-QFN (3x5)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 5V
Vgs (Max): +6V, -4V
Drain to Source Voltage (Vdss): 150 V
Gate Charge (Qg) (Max) @ Vgs: 13.8 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 2103 pF @ 75 V

auf Bestellung 44055 Stücke:

Lieferzeit 10-14 Tag (e)

2+	12.82 EUR
10+	8.63 EUR
50+	6.83 EUR
100+	6.25 EUR
500+	5.88 EUR

Mindestbestellmenge: 2 Stücke

Im Einkaufswagen Stück im Wert von UAH

EPC2308ENGRT

Description: TRANS GAN 150V .006OHM 3X5PQFN
Packaging: Tape & Reel (TR)
Package / Case: 7-PowerWQFN
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: GaNFET (Gallium Nitride)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 48A (Tc)
Rds On (Max) @ Id, Vgs: 6mOhm @ 15A, 5V
Vgs(th) (Max) @ Id: 2.5V @ 5mA
Supplier Device Package: 7-QFN (3x5)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 5V
Vgs (Max): +6V, -4V
Drain to Source Voltage (Vdss): 150 V
Gate Charge (Qg) (Max) @ Vgs: 13.8 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 2103 pF @ 75 V

auf Bestellung 39000 Stücke:

Lieferzeit 10-14 Tag (e)

3000+	4.81 EUR

Mindestbestellmenge: 3000 Stücke

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EPC23101ENGRT

Description: TRANS GAN 100V EPOWER STAGE
Features: Bootstrap Circuit, Slew Rate Controlled
Packaging: Cut Tape (CT)
Package / Case: 14-PowerWFQFN
Mounting Type: Surface Mount, Wettable Flank
Interface: Logic
Operating Temperature: -40°C ~ 125°C (TJ)
Output Configuration: Half Bridge
Voltage - Supply: 10V ~ 80V
Rds On (Typ): 3.3mOhm
Applications: General Purpose
Current - Output / Channel: 65A
Technology: Gallium Nitride (GaN) FETs
Voltage - Load: 10V ~ 80V
Supplier Device Package: 14-QFN (3.5x5)
Fault Protection: ESD, UVLO
Load Type: Inductive, Capacitive, Resistive

auf Bestellung 4316 Stücke:

Lieferzeit 10-14 Tag (e)

2+	15.37 EUR
10+	11.91 EUR
25+	11.06 EUR
100+	10.1 EUR
250+	9.87 EUR

Mindestbestellmenge: 2 Stücke

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EPC23101ENGRT

Description: TRANS GAN 100V EPOWER STAGE
Features: Bootstrap Circuit, Slew Rate Controlled
Packaging: Tape & Reel (TR)
Package / Case: 14-PowerWFQFN
Mounting Type: Surface Mount, Wettable Flank
Interface: Logic
Operating Temperature: -40°C ~ 125°C (TJ)
Output Configuration: Half Bridge
Voltage - Supply: 10V ~ 80V
Rds On (Typ): 3.3mOhm
Applications: General Purpose
Current - Output / Channel: 65A
Technology: Gallium Nitride (GaN) FETs
Voltage - Load: 10V ~ 80V
Supplier Device Package: 14-QFN (3.5x5)
Fault Protection: ESD, UVLO
Load Type: Inductive, Capacitive, Resistive

auf Bestellung 3000 Stücke:

Lieferzeit 10-14 Tag (e)

3000+	8.87 EUR

Mindestbestellmenge: 3000 Stücke

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EPC23102

Description: IC HALF BRIDGE DRIVER 35A 13WQFN
Packaging: Tape & Reel (TR)
Features: Bootstrap Circuit
Package / Case: 13-PowerWFQFN
Mounting Type: Surface Mount, Wettable Flank
Interface: PWM
Operating Temperature: -40°C ~ 125°C (TJ)
Output Configuration: Half Bridge
Voltage - Supply: 10V ~ 80V
Rds On (Typ): 6.6mOhm LS + HS
Applications: DC Motors, DC-DC Converters
Current - Output / Channel: 35A
Technology: MOSFET (Metal Oxide)
Voltage - Load: 10V ~ 80V
Supplier Device Package: 13-WQFN-HR (3.5x5)
Load Type: Inductive, Capacitive, Resistive

auf Bestellung 6000 Stücke:

Lieferzeit 10-14 Tag (e)

3000+	9.07 EUR

Mindestbestellmenge: 3000 Stücke

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EPC23102

Description: IC HALF BRIDGE DRIVER 35A 13WQFN
Packaging: Cut Tape (CT)
Features: Bootstrap Circuit
Package / Case: 13-PowerWFQFN
Mounting Type: Surface Mount, Wettable Flank
Interface: PWM
Operating Temperature: -40°C ~ 125°C (TJ)
Output Configuration: Half Bridge
Voltage - Supply: 10V ~ 80V
Rds On (Typ): 6.6mOhm LS + HS
Applications: DC Motors, DC-DC Converters
Current - Output / Channel: 35A
Technology: MOSFET (Metal Oxide)
Voltage - Load: 10V ~ 80V
Supplier Device Package: 13-WQFN-HR (3.5x5)
Load Type: Inductive, Capacitive, Resistive

auf Bestellung 7710 Stücke:

Lieferzeit 10-14 Tag (e)

2+	15.68 EUR
10+	12.17 EUR
25+	11.28 EUR
100+	10.32 EUR
250+	10.09 EUR

Mindestbestellmenge: 2 Stücke

Im Einkaufswagen Stück im Wert von UAH

EPC23102

Gate Drivers Integrated Circuits 100 V ePower stage in FCQFN

auf Bestellung 6929 Stücke:

Lieferzeit 10-14 Tag (e)

1+	15.43 EUR
10+	11.98 EUR
25+	11.13 EUR
100+	10.16 EUR
250+	9.72 EUR
500+	9.45 EUR
1000+	9.2 EUR

Im Einkaufswagen Stück im Wert von UAH

EPC23102ENGRT

Description: IC HALF BRIDGE DRIVER 35A 13WQFN
Features: Bootstrap Circuit
Packaging: Tape & Reel (TR)
Package / Case: 13-PowerWFQFN
Mounting Type: Surface Mount, Wettable Flank
Interface: Logic, PWM
Operating Temperature: -40°C ~ 125°C (TJ)
Output Configuration: Half Bridge
Voltage - Supply: 4.5V ~ 5.5V
Rds On (Typ): 5.2mOhm LS, 5.2mOhm HS
Applications: AC Motors, DC Motors, DC-DC Converters, General Purpose
Current - Output / Channel: 35A
Technology: Gallium Nitride (GaN) FETs
Voltage - Load: 10V ~ 80V
Supplier Device Package: 13-WQFN-HR (3.5x5)
Fault Protection: Current Limiting, ESD, Over Voltage, UVLO
Load Type: Inductive, Capacitive, Resistive

Produkt ist nicht verfügbar

Mindestbestellmenge: 3000 Stücke

Im Einkaufswagen Stück im Wert von UAH

EPC23102ENGRT

Description: IC HALF BRIDGE DRIVER 35A 13WQFN
Features: Bootstrap Circuit
Packaging: Cut Tape (CT)
Package / Case: 13-PowerWFQFN
Mounting Type: Surface Mount, Wettable Flank
Interface: Logic, PWM
Operating Temperature: -40°C ~ 125°C (TJ)
Output Configuration: Half Bridge
Voltage - Supply: 4.5V ~ 5.5V
Rds On (Typ): 5.2mOhm LS, 5.2mOhm HS
Applications: AC Motors, DC Motors, DC-DC Converters, General Purpose
Current - Output / Channel: 35A
Technology: Gallium Nitride (GaN) FETs
Voltage - Load: 10V ~ 80V
Supplier Device Package: 13-WQFN-HR (3.5x5)
Fault Protection: Current Limiting, ESD, Over Voltage, UVLO
Load Type: Inductive, Capacitive, Resistive

Produkt ist nicht verfügbar

Im Einkaufswagen Stück im Wert von UAH

EPC23103ENGRT

Description: IC GAN EPOWER STAGE 100V 20A
Features: Bootstrap Circuit, Slew Rate Controlled
Packaging: Cut Tape (CT)
Package / Case: 13-PowerWFQFN
Mounting Type: Surface Mount, Wettable Flank
Interface: Logic
Operating Temperature: -40°C ~ 125°C (TJ)
Output Configuration: Half Bridge
Voltage - Supply: 10V ~ 80V
Rds On (Typ): 7.6mOhm LS + HS
Applications: DC Motors, DC-DC Converters
Current - Output / Channel: 25A
Current - Peak Output: 109A
Technology: Gallium Nitride (GaN) FETs
Voltage - Load: 10V ~ 80V
Supplier Device Package: 13-WQFN-HR (3.5x5)
Fault Protection: ESD, Over Voltage, Short Circuit
Load Type: Capacitive and Resistive

Produkt ist nicht verfügbar

Im Einkaufswagen Stück im Wert von UAH

EPC23103ENGRT

Description: IC GAN EPOWER STAGE 100V 20A
Features: Bootstrap Circuit, Slew Rate Controlled
Packaging: Tape & Reel (TR)
Package / Case: 13-PowerWFQFN
Mounting Type: Surface Mount, Wettable Flank
Interface: Logic
Operating Temperature: -40°C ~ 125°C (TJ)
Output Configuration: Half Bridge
Voltage - Supply: 10V ~ 80V
Rds On (Typ): 7.6mOhm LS + HS
Applications: DC Motors, DC-DC Converters
Current - Output / Channel: 25A
Current - Peak Output: 109A
Technology: Gallium Nitride (GaN) FETs
Voltage - Load: 10V ~ 80V
Supplier Device Package: 13-WQFN-HR (3.5x5)
Fault Protection: ESD, Over Voltage, Short Circuit
Load Type: Capacitive and Resistive

Produkt ist nicht verfügbar

Mindestbestellmenge: 3000 Stücke

Im Einkaufswagen Stück im Wert von UAH

EPC23104

Description: IC GAN EPWR STAGE 100V 10A 13QFN
Packaging: Cut Tape (CT)
Features: Bootstrap Circuit, Slew Rate Controlled
Package / Case: 13-PowerWFQFN
Mounting Type: Surface Mount, Wettable Flank
Interface: Logic
Operating Temperature: -40°C ~ 125°C (TJ)
Output Configuration: Half Bridge
Voltage - Supply: 10V ~ 80V
Rds On (Typ): 7.6mOhm LS + HS
Applications: DC Motors, DC-DC Converters
Current - Output / Channel: 15A
Current - Peak Output: 78A
Technology: NMOS
Voltage - Load: 10V ~ 80V
Supplier Device Package: 13-WQFN-HR (3.5x5)
Fault Protection: ESD, Over Voltage, Short Circuit
Load Type: Capacitive and Resistive

auf Bestellung 1718 Stücke:

Lieferzeit 10-14 Tag (e)

3+	9.23 EUR
10+	7.03 EUR
25+	6.49 EUR
100+	5.88 EUR
250+	5.6 EUR

Mindestbestellmenge: 3 Stücke

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EPC23104

Description: IC GAN EPWR STAGE 100V 10A 13QFN
Features: Bootstrap Circuit, Slew Rate Controlled
Packaging: Tape & Reel (TR)
Package / Case: 13-PowerWFQFN
Mounting Type: Surface Mount, Wettable Flank
Interface: Logic
Operating Temperature: -40°C ~ 125°C (TJ)
Output Configuration: Half Bridge
Voltage - Supply: 10V ~ 80V
Rds On (Typ): 7.6mOhm LS + HS
Applications: DC Motors, DC-DC Converters
Current - Output / Channel: 15A
Current - Peak Output: 78A
Technology: NMOS
Voltage - Load: 10V ~ 80V
Supplier Device Package: 13-WQFN-HR (3.5x5)
Fault Protection: ESD, Over Voltage, Short Circuit
Load Type: Capacitive and Resistive

Produkt ist nicht verfügbar

Mindestbestellmenge: 3000 Stücke

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EPC23104ENGRT

Description: IC HALF BRIDGE DRIVER 15A 13WQFN
Features: Bootstrap Circuit, Slew Rate Controlled
Packaging: Cut Tape (CT)
Package / Case: 13-PowerWFQFN
Mounting Type: Surface Mount, Wettable Flank
Interface: Logic
Operating Temperature: -40°C ~ 125°C (TJ)
Output Configuration: Half Bridge
Voltage - Supply: 10V ~ 80V
Rds On (Typ): 7.6mOhm LS + HS
Applications: DC Motors, DC-DC Converters
Current - Output / Channel: 15A
Current - Peak Output: 78A
Technology: Gallium Nitride (GaN) FETs
Voltage - Load: 10V ~ 80V
Supplier Device Package: 13-WQFN-HR (3.5x5)
Fault Protection: ESD, Over Voltage, Short Circuit
Load Type: Capacitive and Resistive

auf Bestellung 9789 Stücke:

Lieferzeit 10-14 Tag (e)

3+	9.23 EUR
10+	7.03 EUR
25+	6.49 EUR
100+	5.88 EUR
250+	5.6 EUR

Mindestbestellmenge: 3 Stücke

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EPC23104ENGRT

Description: IC HALF BRIDGE DRIVER 15A 13WQFN
Features: Bootstrap Circuit, Slew Rate Controlled
Packaging: Tape & Reel (TR)
Package / Case: 13-PowerWFQFN
Mounting Type: Surface Mount, Wettable Flank
Interface: Logic
Operating Temperature: -40°C ~ 125°C (TJ)
Output Configuration: Half Bridge
Voltage - Supply: 10V ~ 80V
Rds On (Typ): 7.6mOhm LS + HS
Applications: DC Motors, DC-DC Converters
Current - Output / Channel: 15A
Current - Peak Output: 78A
Technology: Gallium Nitride (GaN) FETs
Voltage - Load: 10V ~ 80V
Supplier Device Package: 13-WQFN-HR (3.5x5)
Fault Protection: ESD, Over Voltage, Short Circuit
Load Type: Capacitive and Resistive

auf Bestellung 3000 Stücke:

Lieferzeit 10-14 Tag (e)

3000+	5.09 EUR

Mindestbestellmenge: 3000 Stücke

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EPC2361

Description: TRANS GAN 100V DIE,1 MOHM, 7PINQ
Packaging: Tape & Reel (TR)
Package / Case: 7-PowerWQFN
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: GaNFET (Gallium Nitride)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 101A (Ta)
Rds On (Max) @ Id, Vgs: 1mOhm @ 50A, 5V
Vgs(th) (Max) @ Id: 2.5V @ 15mA
Supplier Device Package: 7-QFN (3x5)
Drive Voltage (Max Rds On, Min Rds On): 5V
Vgs (Max): +6V, -4V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 28 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 4094 pF @ 50 V

auf Bestellung 39000 Stücke:

Lieferzeit 10-14 Tag (e)

3000+	7.24 EUR

Mindestbestellmenge: 3000 Stücke

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EPC2361

GaN FETs EPC eGaN FET,80 V, 1.0 milliohm at 5 V, 3 mm x 5 mm QFN

auf Bestellung 10142 Stücke:

Lieferzeit 10-14 Tag (e)

1+	17.26 EUR
10+	9.51 EUR
100+	8.76 EUR
500+	8.21 EUR
1000+	7.52 EUR
3000+	7.02 EUR

Im Einkaufswagen Stück im Wert von UAH

EPC2361

Description: TRANS GAN 100V DIE,1 MOHM, 7PINQ
Packaging: Cut Tape (CT)
Package / Case: 7-PowerWQFN
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: GaNFET (Gallium Nitride)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 101A (Ta)
Rds On (Max) @ Id, Vgs: 1mOhm @ 50A, 5V
Vgs(th) (Max) @ Id: 2.5V @ 15mA
Supplier Device Package: 7-QFN (3x5)
Drive Voltage (Max Rds On, Min Rds On): 5V
Vgs (Max): +6V, -4V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 28 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 4094 pF @ 50 V

auf Bestellung 41911 Stücke:

Lieferzeit 10-14 Tag (e)

2+	17.7 EUR
10+	12.07 EUR
50+	9.66 EUR
100+	8.89 EUR
500+	8.35 EUR

Mindestbestellmenge: 2 Stücke

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EPC2361ENGRT

Description: TRANS GAN 100V .001OHM 7QFN
Packaging: Tape & Reel (TR)

Produkt ist nicht verfügbar

Im Einkaufswagen Stück im Wert von UAH

EPC2361ENGRT

Description: TRANS GAN 100V .001OHM 7QFN
Packaging: Cut Tape (CT)

auf Bestellung 3 Stücke:

Lieferzeit 10-14 Tag (e)

2+	19.31 EUR

Mindestbestellmenge: 2 Stücke

Im Einkaufswagen Stück im Wert von UAH

EPC2366

Description: GANFET N-CH 40V 88A 5QFN

auf Bestellung 5963 Stücke:

Lieferzeit 10-14 Tag (e)

3+	8.71 EUR
10+	5.75 EUR
50+	4.47 EUR
100+	4.07 EUR
500+	3.5 EUR

Mindestbestellmenge: 3 Stücke

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EPC2366

Description: GANFET N-CH 40V 88A 5QFN

auf Bestellung 3000 Stücke:

Lieferzeit 10-14 Tag (e)

3000+	2.86 EUR

Mindestbestellmenge: 3000 Stücke

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EPC2366ENGRT

Description: TRANS GAN 40V DIE,0.8 MOHM,5PINQ
Packaging: Cut Tape (CT)
Package / Case: 5-PowerWQFN
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: GaNFET (Gallium Nitride)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 88A
Rds On (Max) @ Id, Vgs: 0.8Ohm @ 30A, 5V
Vgs(th) (Max) @ Id: 2.5V @ 12mA
Supplier Device Package: 5-QFN (3.3x2.6)
Drive Voltage (Max Rds On, Min Rds On): 5V
Vgs (Max): +6V, -4V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 13 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 2645 pF @ 20 V

auf Bestellung 443 Stücke:

Lieferzeit 10-14 Tag (e)

3+	7.88 EUR
10+	5.19 EUR
100+	3.67 EUR

Mindestbestellmenge: 3 Stücke

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EPC2366ENGRT

Description: TRANS GAN 40V DIE,0.8 MOHM,5PINQ
Packaging: Tape & Reel (TR)
Package / Case: 5-PowerWQFN
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: GaNFET (Gallium Nitride)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 88A
Rds On (Max) @ Id, Vgs: 0.8Ohm @ 30A, 5V
Vgs(th) (Max) @ Id: 2.5V @ 12mA
Supplier Device Package: 5-QFN (3.3x2.6)
Drive Voltage (Max Rds On, Min Rds On): 5V
Vgs (Max): +6V, -4V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 13 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 2645 pF @ 20 V

Produkt ist nicht verfügbar

Mindestbestellmenge: 3000 Stücke

Im Einkaufswagen Stück im Wert von UAH

EPC2367

GaN FETs EPC eGaN FET,100 V, 1.2 milliohm at 5 V(typ), 3.3 mm x 3.3 mm QFN

auf Bestellung 14047 Stücke:

Lieferzeit 10-14 Tag (e)

1+	13.86 EUR
10+	7.54 EUR
100+	6.91 EUR
500+	6.58 EUR
1000+	5.87 EUR
3000+	5.28 EUR

Im Einkaufswagen Stück im Wert von UAH

EPC2367

Description: GANFET N-CH 100V 101A 5QFN
Packaging: Cut Tape (CT)
Package / Case: 5-PowerWQFN
Mounting Type: Surface Mount, Wettable Flank
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: GaNFET (Gallium Nitride)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 78A (Tj)
Rds On (Max) @ Id, Vgs: 1.2mOhm @ 30A, 5V
Vgs(th) (Max) @ Id: 2.5V @ 10mA
Supplier Device Package: 5-QFN (3.3x3.3)
Drive Voltage (Max Rds On, Min Rds On): 5V
Vgs (Max): +6V, -4V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 17 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 2170 pF @ 50 V

auf Bestellung 21740 Stücke:

Lieferzeit 10-14 Tag (e)

2+	14.33 EUR
10+	9.66 EUR
50+	7.66 EUR
100+	7.02 EUR
500+	6.69 EUR

Mindestbestellmenge: 2 Stücke

Im Einkaufswagen Stück im Wert von UAH

EPC2367

Description: GANFET N-CH 100V 101A 5QFN
Packaging: Tape & Reel (TR)
Package / Case: 5-PowerWQFN
Mounting Type: Surface Mount, Wettable Flank
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: GaNFET (Gallium Nitride)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 78A (Tj)
Rds On (Max) @ Id, Vgs: 1.2mOhm @ 30A, 5V
Vgs(th) (Max) @ Id: 2.5V @ 10mA
Supplier Device Package: 5-QFN (3.3x3.3)
Drive Voltage (Max Rds On, Min Rds On): 5V
Vgs (Max): +6V, -4V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 17 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 2170 pF @ 50 V

auf Bestellung 21000 Stücke:

Lieferzeit 10-14 Tag (e)

3000+	5.15 EUR

Mindestbestellmenge: 3000 Stücke

Im Einkaufswagen Stück im Wert von UAH

EPC2367A

Produkt ist nicht verfügbar

Im Einkaufswagen Stück im Wert von UAH

EPC241BP

DIP24

auf Bestellung 7 Stücke:

Lieferzeit 21-28 Tag (e)

Im Einkaufswagen Stück im Wert von UAH

EPC2619

Description: TRANS GAN 100V .0042 OHM 6LGA
Packaging: Tape & Reel (TR)
Package / Case: Die
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: GaNFET (Gallium Nitride)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 29A (Ta)
Rds On (Max) @ Id, Vgs: 3.3mOhm @ 16A, 5V
Vgs(th) (Max) @ Id: 2.5V @ 5.5mA
Supplier Device Package: Die
Drive Voltage (Max Rds On, Min Rds On): 5V
Vgs (Max): +6V, -4V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 8.3 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 1180 pF @ 50 V

auf Bestellung 10000 Stücke:

Lieferzeit 10-14 Tag (e)

2500+	2.98 EUR

Mindestbestellmenge: 2500 Stücke

Im Einkaufswagen Stück im Wert von UAH

EPC2619

GaN FETs EPC eGaN FET,100 V, 3.3 milliohm typ at 5 V, LGA 2.5 x 1.5

auf Bestellung 7251 Stücke:

Lieferzeit 10-14 Tag (e)

1+	9.45 EUR
10+	5.46 EUR
100+	4.63 EUR
500+	3.88 EUR
1000+	3.67 EUR
2500+	3.33 EUR
5000+	3.06 EUR

Im Einkaufswagen Stück im Wert von UAH

EPC2619

Description: TRANS GAN 100V .0042 OHM 6LGA
Packaging: Cut Tape (CT)
Package / Case: Die
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: GaNFET (Gallium Nitride)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 29A (Ta)
Rds On (Max) @ Id, Vgs: 3.3mOhm @ 16A, 5V
Vgs(th) (Max) @ Id: 2.5V @ 5.5mA
Supplier Device Package: Die
Drive Voltage (Max Rds On, Min Rds On): 5V
Vgs (Max): +6V, -4V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 8.3 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 1180 pF @ 50 V

auf Bestellung 12490 Stücke:

Lieferzeit 10-14 Tag (e)

3+	8.96 EUR
10+	5.93 EUR
50+	4.62 EUR
100+	4.2 EUR
500+	3.64 EUR

Mindestbestellmenge: 3 Stücke

Im Einkaufswagen Stück im Wert von UAH

EPC2619ENGRT

Description: TRANS GAN 80V .0033OHM 6LGA
Packaging: Tape & Reel (TR)
Package / Case: Die
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: GaNFET (Gallium Nitride)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 29A (Ta)
Rds On (Max) @ Id, Vgs: 3.3mOhm @ 16A, 5V
Vgs(th) (Max) @ Id: 2.5V @ 5.5mA
Supplier Device Package: Die
Drive Voltage (Max Rds On, Min Rds On): 5V
Vgs (Max): +6V, -4V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 8.3 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 1180 pF @ 50 V

Produkt ist nicht verfügbar

Mindestbestellmenge: 10000 Stücke

Im Einkaufswagen Stück im Wert von UAH

EPC2619ENGRT

Description: TRANS GAN 80V .0033OHM 6LGA
Packaging: Cut Tape (CT)
Package / Case: Die
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: GaNFET (Gallium Nitride)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 29A (Ta)
Rds On (Max) @ Id, Vgs: 3.3mOhm @ 16A, 5V
Vgs(th) (Max) @ Id: 2.5V @ 5.5mA
Supplier Device Package: Die
Drive Voltage (Max Rds On, Min Rds On): 5V
Vgs (Max): +6V, -4V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 8.3 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 1180 pF @ 50 V

Produkt ist nicht verfügbar

Im Einkaufswagen Stück im Wert von UAH

EPC2801

Description: TRANS GAN 100V 25A BUMPED DIE

auf Bestellung 354 Stücke:

Lieferzeit 10-14 Tag (e)

Im Einkaufswagen Stück im Wert von UAH

EPC2801

Description: TRANS GAN 100V 25A BUMPED DIE

auf Bestellung 354 Stücke:

Lieferzeit 10-14 Tag (e)

Im Einkaufswagen Stück im Wert von UAH

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