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EPC2218EPCDescription: GANFET N-CH 100V DIE
Packaging: Tape & Reel (TR)
Package / Case: Die
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: GaNFET (Gallium Nitride)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 60A (Ta)
Rds On (Max) @ Id, Vgs: 3.2mOhm @ 25A, 5V
Vgs(th) (Max) @ Id: 2.5V @ 7mA
Supplier Device Package: Die
Part Status: Not For New Designs
Drive Voltage (Max Rds On, Min Rds On): 5V
Vgs (Max): +6V, -4V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 13.6 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 1570 pF @ 50 V
Voltage Coupled to Gate Charge (Qg) (Max) @ Vgs: 5
Voltage Coupled to Input Capacitance (Ciss) (Max) @ Vds: 50
auf Bestellung 16000 Stücke:
Lieferzeit 10-14 Tag (e)
1000+5.75 EUR
2000+5.74 EUR
Mindestbestellmenge: 1000 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
EPC2218AEPCDescription: TRANS GAN 80V .0032OHM AECQ101
Packaging: Cut Tape (CT)
Package / Case: Die
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: GaNFET (Gallium Nitride)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 60A (Ta)
Rds On (Max) @ Id, Vgs: 3.2mOhm @ 25A, 5V
Vgs(th) (Max) @ Id: 2.5V @ 7mA
Supplier Device Package: Die
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 5V
Vgs (Max): +6V, -4V
Drain to Source Voltage (Vdss): 80 V
Gate Charge (Qg) (Max) @ Vgs: 13.6 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 1570 pF @ 50 V
Grade: Automotive
Qualification: AEC-Q101
auf Bestellung 13547 Stücke:
Lieferzeit 10-14 Tag (e)
2+12.21 EUR
10+8.19 EUR
100+5.91 EUR
500+5.51 EUR
Mindestbestellmenge: 2 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
EPC2218AEPCGaN FETs EPC eGaN FET,80 V, 3.2 milliohm at 5 V, LGA 3.5 x 1.95
auf Bestellung 52 Stücke:
Lieferzeit 10-14 Tag (e)
1+11.98 EUR
10+8.04 EUR
100+5.82 EUR
500+5.4 EUR
1000+4.61 EUR
Im Einkaufswagen  Stück im Wert von  UAH
EPC2218AEPCDescription: TRANS GAN 80V .0032OHM AECQ101
Packaging: Tape & Reel (TR)
Package / Case: Die
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: GaNFET (Gallium Nitride)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 60A (Ta)
Rds On (Max) @ Id, Vgs: 3.2mOhm @ 25A, 5V
Vgs(th) (Max) @ Id: 2.5V @ 7mA
Supplier Device Package: Die
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 5V
Vgs (Max): +6V, -4V
Drain to Source Voltage (Vdss): 80 V
Gate Charge (Qg) (Max) @ Vgs: 13.6 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 1570 pF @ 50 V
Grade: Automotive
Qualification: AEC-Q101
auf Bestellung 13000 Stücke:
Lieferzeit 10-14 Tag (e)
1000+4.63 EUR
2000+4.5 EUR
Mindestbestellmenge: 1000 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
EPC2219EPCDescription: TRANS GAN 65V AECQ101 3.3OHM DIE
Input Capacitance (Ciss) (Max) @ Vds: 10 pF @ 32.5 V
Gate Charge (Qg) (Max) @ Vgs: 0.064 nC @ 5 V
Drain to Source Voltage (Vdss): 65 V
Drive Voltage (Max Rds On, Min Rds On): 5V
Part Status: Active
Supplier Device Package: Die
Vgs(th) (Max) @ Id: 2.5V @ 100µA
Rds On (Max) @ Id, Vgs: 3.3Ohm @ 59mA, 5V
Current - Continuous Drain (Id) @ 25°C: 500mA (Ta)
FET Type: N-Channel
Technology: GaNFET (Gallium Nitride)
Operating Temperature: -40°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: Die
Packaging: Cut Tape (CT)
auf Bestellung 7999 Stücke:
Lieferzeit 10-14 Tag (e)
8+2.7 EUR
10+2.21 EUR
100+1.73 EUR
500+1.46 EUR
1000+1.19 EUR
Mindestbestellmenge: 8 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
EPC2219EPCDescription: TRANS GAN 65V AECQ101 3.3OHM DIE
Input Capacitance (Ciss) (Max) @ Vds: 10 pF @ 32.5 V
Gate Charge (Qg) (Max) @ Vgs: 0.064 nC @ 5 V
Drain to Source Voltage (Vdss): 65 V
Drive Voltage (Max Rds On, Min Rds On): 5V
Part Status: Active
Supplier Device Package: Die
Vgs(th) (Max) @ Id: 2.5V @ 100µA
Rds On (Max) @ Id, Vgs: 3.3Ohm @ 59mA, 5V
Current - Continuous Drain (Id) @ 25°C: 500mA (Ta)
FET Type: N-Channel
Technology: GaNFET (Gallium Nitride)
Operating Temperature: -40°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: Die
Packaging: Tape & Reel (TR)
auf Bestellung 5000 Stücke:
Lieferzeit 10-14 Tag (e)
2500+1.12 EUR
5000+1.07 EUR
Mindestbestellmenge: 2500 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
EPC2221EPCDescription: GANFET 2N-CH 100V 5A DIE
Packaging: Tape & Reel (TR)
Package / Case: Die
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual) Common Source
Operating Temperature: 150°C (TJ)
Technology: GaNFET (Gallium Nitride)
Drain to Source Voltage (Vdss): 100V
Current - Continuous Drain (Id) @ 25°C: 5A
Supplier Device Package: Die
Part Status: Active
auf Bestellung 2500 Stücke:
Lieferzeit 10-14 Tag (e)
2500+2.17 EUR
Mindestbestellmenge: 2500 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
EPC2221EPCGaN FETs EPC AEC eGaN Dual FET,100 V, 58 milliohm at 5 V, BGA 1.35 x 1.35
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
EPC2221EPCDescription: GANFET 2N-CH 100V 5A DIE
Packaging: Cut Tape (CT)
Package / Case: Die
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual) Common Source
Operating Temperature: 150°C (TJ)
Technology: GaNFET (Gallium Nitride)
Drain to Source Voltage (Vdss): 100V
Current - Continuous Drain (Id) @ 25°C: 5A
Supplier Device Package: Die
Part Status: Active
auf Bestellung 4109 Stücke:
Lieferzeit 10-14 Tag (e)
4+6.64 EUR
10+4.34 EUR
100+3.03 EUR
500+2.46 EUR
1000+2.28 EUR
Mindestbestellmenge: 4 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
EPC2234EPCDescription: TRANS GAN AEC 160V .008OHM 24BGA
Packaging: Tape & Reel (TR)
Package / Case: 24-VFBGA
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: GaNFET (Gallium Nitride)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 48A (Ta)
Rds On (Max) @ Id, Vgs: 8mOhm @ 20A, 5V
Vgs(th) (Max) @ Id: 2.5V @ 7mA
Supplier Device Package: 24-BGA (4.6x2.6)
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 5V
Vgs (Max): +5.5V, -4V
Drain to Source Voltage (Vdss): 160 V
Gate Charge (Qg) (Max) @ Vgs: 13.8 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 1386 pF @ 100 V
Qualification: AEC-Q101
auf Bestellung 6000 Stücke:
Lieferzeit 10-14 Tag (e)
500+12.27 EUR
Mindestbestellmenge: 500 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
EPC2234EPCDescription: TRANS GAN AEC 160V .008OHM 24BGA
Packaging: Cut Tape (CT)
Package / Case: 24-VFBGA
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: GaNFET (Gallium Nitride)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 48A (Ta)
Rds On (Max) @ Id, Vgs: 8mOhm @ 20A, 5V
Vgs(th) (Max) @ Id: 2.5V @ 7mA
Supplier Device Package: 24-BGA (4.6x2.6)
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 5V
Vgs (Max): +5.5V, -4V
Drain to Source Voltage (Vdss): 160 V
Gate Charge (Qg) (Max) @ Vgs: 13.8 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 1386 pF @ 100 V
Qualification: AEC-Q101
auf Bestellung 6530 Stücke:
Lieferzeit 10-14 Tag (e)
1+24.72 EUR
10+17.24 EUR
100+13.03 EUR
Im Einkaufswagen  Stück im Wert von  UAH
EPC2234EPCGaN FETs EPC eGaN FET,160 V, 8 milliohm at 5 V, BGA 4.6 x 2.6
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
EPC2252EPCDescription: TRANSGAN 80V.011OHM AECQ101 9BGA
Packaging: Cut Tape (CT)
Package / Case: Die
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: GaNFET (Gallium Nitride)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 8.2A (Ta)
Rds On (Max) @ Id, Vgs: 11mOhm @ 11A, 5V
Vgs(th) (Max) @ Id: 2.5V @ 2.5mA
Supplier Device Package: Die
Grade: Automotive
Vgs (Max): +6V, -4V
Drain to Source Voltage (Vdss): 80 V
Gate Charge (Qg) (Max) @ Vgs: 4.3 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 576 pF @ 50 V
Qualification: AEC-Q101
auf Bestellung 47878 Stücke:
Lieferzeit 10-14 Tag (e)
5+5.09 EUR
10+3.28 EUR
100+2.25 EUR
500+1.81 EUR
1000+1.69 EUR
Mindestbestellmenge: 5 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
EPC2252EPCDescription: TRANSGAN 80V.011OHM AECQ101 9BGA
Packaging: Tape & Reel (TR)
Package / Case: Die
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: GaNFET (Gallium Nitride)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 8.2A (Ta)
Rds On (Max) @ Id, Vgs: 11mOhm @ 11A, 5V
Vgs(th) (Max) @ Id: 2.5V @ 2.5mA
Supplier Device Package: Die
Grade: Automotive
Vgs (Max): +6V, -4V
Drain to Source Voltage (Vdss): 80 V
Gate Charge (Qg) (Max) @ Vgs: 4.3 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 576 pF @ 50 V
Qualification: AEC-Q101
auf Bestellung 47500 Stücke:
Lieferzeit 10-14 Tag (e)
2500+1.51 EUR
5000+1.42 EUR
7500+1.38 EUR
Mindestbestellmenge: 2500 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
EPC2252EPCGaN FETs eGaN FET, 80V, 11milliohm at 5 V, 1.5 x 1.5mm BGA
auf Bestellung 12094 Stücke:
Lieferzeit 10-14 Tag (e)
1+4.96 EUR
10+3.2 EUR
100+2.23 EUR
500+1.82 EUR
1000+1.69 EUR
2500+1.59 EUR
5000+1.44 EUR
Im Einkaufswagen  Stück im Wert von  UAH
EPC2302EPCGaN FETs EPC eGaN FET,100 V, 1.8 milliohm at 5 V, 3 mm x 5 mm QFN
auf Bestellung 16192 Stücke:
Lieferzeit 10-14 Tag (e)
1+14.22 EUR
10+9.84 EUR
100+7.58 EUR
1000+7.14 EUR
3000+6.62 EUR
Im Einkaufswagen  Stück im Wert von  UAH
EPC2302EPCDescription: TRANS GAN 100V DIE .0018OHM
Packaging: Cut Tape (CT)
Package / Case: 7-PowerWQFN
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: GaNFET (Gallium Nitride)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 101A (Ta)
Rds On (Max) @ Id, Vgs: 1.8mOhm @ 50A, 5V
Vgs(th) (Max) @ Id: 2.5V @ 14mA
Supplier Device Package: 7-QFN (3x5)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 5V
Vgs (Max): +6V, -4V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 23 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 3200 pF @ 50 V
Voltage Coupled to Gate Charge (Qg) (Max) @ Vgs: 5
Voltage Coupled to Input Capacitance (Ciss) (Max) @ Vds: 50
auf Bestellung 93657 Stücke:
Lieferzeit 10-14 Tag (e)
2+15.4 EUR
10+10.46 EUR
100+7.68 EUR
500+7.54 EUR
Mindestbestellmenge: 2 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
EPC2302EPCDescription: TRANS GAN 100V DIE .0018OHM
Packaging: Tape & Reel (TR)
Package / Case: 7-PowerWQFN
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: GaNFET (Gallium Nitride)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 101A (Ta)
Rds On (Max) @ Id, Vgs: 1.8mOhm @ 50A, 5V
Vgs(th) (Max) @ Id: 2.5V @ 14mA
Supplier Device Package: 7-QFN (3x5)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 5V
Vgs (Max): +6V, -4V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 23 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 3200 pF @ 50 V
Voltage Coupled to Gate Charge (Qg) (Max) @ Vgs: 5
Voltage Coupled to Input Capacitance (Ciss) (Max) @ Vds: 50
auf Bestellung 93000 Stücke:
Lieferzeit 10-14 Tag (e)
3000+6.58 EUR
Mindestbestellmenge: 3000 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
EPC2302ENGRTEPCDescription: TRANS GAN 100V DIE .0018OHM
Packaging: Tape & Reel (TR)
Package / Case: 7-PowerWQFN
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: GaNFET (Gallium Nitride)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 101A (Ta)
Rds On (Max) @ Id, Vgs: 1.8mOhm @ 50A, 5V
Vgs(th) (Max) @ Id: 2.5V @ 14mA
Supplier Device Package: 7-QFN (3x5)
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 5V
Vgs (Max): +6V, -4V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 23 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 3200 pF @ 50 V
Produkt ist nicht verfügbar
Mindestbestellmenge: 12000 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
EPC2304EPCDescription: TRANS GAN 200V .005OHM 7QFN
Packaging: Cut Tape (CT)
Package / Case: 7-PowerWQFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: GaNFET (Gallium Nitride)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 102A (Ta)
Rds On (Max) @ Id, Vgs: 3.1mOhm @ 32A, 5V
Vgs(th) (Max) @ Id: 2.5V @ 8mA
Supplier Device Package: 7-QFN (3x5)
Drive Voltage (Max Rds On, Min Rds On): 5V
Vgs (Max): +6V, -4V
Drain to Source Voltage (Vdss): 200 V
Gate Charge (Qg) (Max) @ Vgs: 24 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 3195 pF @ 100 V
auf Bestellung 24890 Stücke:
Lieferzeit 10-14 Tag (e)
2+16.23 EUR
10+11.07 EUR
100+8.15 EUR
500+8.1 EUR
Mindestbestellmenge: 2 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
EPC2304EPCDescription: TRANS GAN 200V .005OHM 7QFN
Packaging: Tape & Reel (TR)
Package / Case: 7-PowerWQFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: GaNFET (Gallium Nitride)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 102A (Ta)
Rds On (Max) @ Id, Vgs: 3.1mOhm @ 32A, 5V
Vgs(th) (Max) @ Id: 2.5V @ 8mA
Supplier Device Package: 7-QFN (3x5)
Drive Voltage (Max Rds On, Min Rds On): 5V
Vgs (Max): +6V, -4V
Drain to Source Voltage (Vdss): 200 V
Gate Charge (Qg) (Max) @ Vgs: 24 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 3195 pF @ 100 V
auf Bestellung 24000 Stücke:
Lieferzeit 10-14 Tag (e)
3000+6.62 EUR
Mindestbestellmenge: 3000 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
EPC2304EPCGaN FETs EPC eGaN FET, 200 V, 5 milliohm at 5 V, 3 mm x 5 mm FCQFN
auf Bestellung 14070 Stücke:
Lieferzeit 10-14 Tag (e)
1+15.12 EUR
10+10.39 EUR
100+8.15 EUR
1000+7.66 EUR
3000+6.91 EUR
Im Einkaufswagen  Stück im Wert von  UAH
EPC2304ENGRTEPCDescription: TRANS GAN 200V .005OHM 3X5PQFN
Packaging: Cut Tape (CT)
Part Status: Active
Package / Case: 7-PowerWQFN
Mounting Type: Surface Mount
Supplier Device Package: 7-QFN (3x5)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: GaNFET (Gallium Nitride)
FET Type: N-Channel
Drive Voltage (Max Rds On, Min Rds On): 5V
Vgs (Max): +6V, -4V
Drain to Source Voltage (Vdss): 200 V
Gate Charge (Qg) (Max) @ Vgs: 24 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 3195 pF @ 100 V
Current - Continuous Drain (Id) @ 25°C: 102A (Ta)
Rds On (Max) @ Id, Vgs: 3.1mOhm @ 32A, 5V
Vgs(th) (Max) @ Id: 2.5V @ 8mA
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
EPC2304ENGRTEPCDescription: TRANS GAN 200V .005OHM 3X5PQFN
Packaging: Tape & Reel (TR)
Part Status: Active
Package / Case: 7-PowerWQFN
Mounting Type: Surface Mount
Supplier Device Package: 7-QFN (3x5)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: GaNFET (Gallium Nitride)
FET Type: N-Channel
Drive Voltage (Max Rds On, Min Rds On): 5V
Vgs (Max): +6V, -4V
Drain to Source Voltage (Vdss): 200 V
Gate Charge (Qg) (Max) @ Vgs: 24 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 3195 pF @ 100 V
Current - Continuous Drain (Id) @ 25°C: 102A (Ta)
Rds On (Max) @ Id, Vgs: 3.1mOhm @ 32A, 5V
Vgs(th) (Max) @ Id: 2.5V @ 8mA
Produkt ist nicht verfügbar
Mindestbestellmenge: 10000 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
EPC2305EPCGaN FETs EPC eGaN FET,150 V, 2.2 milliohm typ at 5 V, QFN 3 x 5mm
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
EPC2305EPCDescription: TRANS GAN 150V .0022OHM 3X5 7QFN
Packaging: Cut Tape (CT)
Package / Case: 7-PowerWQFN
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: GaNFET (Gallium Nitride)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 102A (Tj)
Rds On (Max) @ Id, Vgs: 3mOhm @ 30A, 5V
Vgs(th) (Max) @ Id: 2.5V @ 11mA
Supplier Device Package: 7-QFN (3x5)
Drive Voltage (Max Rds On, Min Rds On): 5V
Vgs (Max): +6V, -4V
Drain to Source Voltage (Vdss): 150 V
Gate Charge (Qg) (Max) @ Vgs: 28.6 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 4165 pF @ 75 V
auf Bestellung 1736 Stücke:
Lieferzeit 10-14 Tag (e)
2+16.17 EUR
10+11.02 EUR
100+8.09 EUR
500+8.01 EUR
Mindestbestellmenge: 2 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
EPC2305EPCDescription: TRANS GAN 150V .0022OHM 3X5 7QFN
Packaging: Tape & Reel (TR)
Package / Case: 7-PowerWQFN
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: GaNFET (Gallium Nitride)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 102A (Tj)
Rds On (Max) @ Id, Vgs: 3mOhm @ 30A, 5V
Vgs(th) (Max) @ Id: 2.5V @ 11mA
Supplier Device Package: 7-QFN (3x5)
Drive Voltage (Max Rds On, Min Rds On): 5V
Vgs (Max): +6V, -4V
Drain to Source Voltage (Vdss): 150 V
Gate Charge (Qg) (Max) @ Vgs: 28.6 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 4165 pF @ 75 V
Produkt ist nicht verfügbar
Mindestbestellmenge: 3000 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
EPC2305ENGRTEPCDescription: TRANS GAN 150V .003OHM 3X5MM QFN
Packaging: Cut Tape (CT)
Package / Case: 7-PowerWQFN
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: GaNFET (Gallium Nitride)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 102A (Tj)
Rds On (Max) @ Id, Vgs: 3mOhm @ 30A, 5V
Vgs(th) (Max) @ Id: 2.5V @ 11mA
Supplier Device Package: 7-QFN (3x5)
Drive Voltage (Max Rds On, Min Rds On): 5V
Vgs (Max): +6V, -4V
Drain to Source Voltage (Vdss): 150 V
Gate Charge (Qg) (Max) @ Vgs: 28.6 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 4165 pF @ 75 V
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
EPC2305ENGRTEPCDescription: TRANS GAN 150V .003OHM 3X5MM QFN
Packaging: Tape & Reel (TR)
Package / Case: 7-PowerWQFN
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: GaNFET (Gallium Nitride)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 102A (Tj)
Rds On (Max) @ Id, Vgs: 3mOhm @ 30A, 5V
Vgs(th) (Max) @ Id: 2.5V @ 11mA
Supplier Device Package: 7-QFN (3x5)
Drive Voltage (Max Rds On, Min Rds On): 5V
Vgs (Max): +6V, -4V
Drain to Source Voltage (Vdss): 150 V
Gate Charge (Qg) (Max) @ Vgs: 28.6 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 4165 pF @ 75 V
Produkt ist nicht verfügbar
Mindestbestellmenge: 3000 Stücke
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EPC2306EPCDescription: TRANS GAN 100V .0038OHM 3X5PQFN
Packaging: Tape & Reel (TR)
Package / Case: 7-PowerWQFN
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: GaNFET (Gallium Nitride)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 48A (Ta)
Rds On (Max) @ Id, Vgs: 3.8mOhm @ 25A, 5V
Vgs(th) (Max) @ Id: 2.5V @ 7mA
Supplier Device Package: 7-QFN (3x5)
Drive Voltage (Max Rds On, Min Rds On): 5V
Vgs (Max): +6V, -4V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 16.3 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 2366 pF @ 50 V
auf Bestellung 9000 Stücke:
Lieferzeit 10-14 Tag (e)
3000+3.44 EUR
Mindestbestellmenge: 3000 Stücke
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EPC2306EPCDescription: TRANS GAN 100V .0038OHM 3X5PQFN
Packaging: Cut Tape (CT)
Package / Case: 7-PowerWQFN
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: GaNFET (Gallium Nitride)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 48A (Ta)
Rds On (Max) @ Id, Vgs: 3.8mOhm @ 25A, 5V
Vgs(th) (Max) @ Id: 2.5V @ 7mA
Supplier Device Package: 7-QFN (3x5)
Drive Voltage (Max Rds On, Min Rds On): 5V
Vgs (Max): +6V, -4V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 16.3 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 2366 pF @ 50 V
auf Bestellung 10105 Stücke:
Lieferzeit 10-14 Tag (e)
3+10.01 EUR
10+6.64 EUR
100+4.74 EUR
500+4.21 EUR
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EPC2306EPCGaN FETs EPC eGaN FET,100 V, 3.1 milliohm at 5 V, 3 mm x 5 mm QFN
auf Bestellung 14025 Stücke:
Lieferzeit 10-14 Tag (e)
1+9.15 EUR
10+6.09 EUR
100+4.36 EUR
500+4.14 EUR
1000+3.92 EUR
3000+3.52 EUR
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EPC23068 S R6PAIntelCONFIG IC EPC23068 TQFP32 SR6PA IND TRAY 1
Produkt ist nicht verfügbar
Mindestbestellmenge: 250 Stücke
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EPC2306ENGRTEPCDescription: TRANS GAN 100V .0038OHM3X5MM QFN
Packaging: Tape & Reel (TR)
Package / Case: 7-PowerWQFN
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: GaNFET (Gallium Nitride)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 48A (Ta)
Rds On (Max) @ Id, Vgs: 3.8mOhm @ 25A, 5V
Vgs(th) (Max) @ Id: 2.5V @ 7mA
Supplier Device Package: 7-QFN (3x5)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 5V
Vgs (Max): +6V, -4V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 16.3 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 2366 pF @ 50 V
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
EPC2306ENGRTEPCDescription: TRANS GAN 100V .0038OHM3X5MM QFN
Packaging: Cut Tape (CT)
Package / Case: 7-PowerWQFN
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: GaNFET (Gallium Nitride)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 48A (Ta)
Rds On (Max) @ Id, Vgs: 3.8mOhm @ 25A, 5V
Vgs(th) (Max) @ Id: 2.5V @ 7mA
Supplier Device Package: 7-QFN (3x5)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 5V
Vgs (Max): +6V, -4V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 16.3 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 2366 pF @ 50 V
auf Bestellung 375 Stücke:
Lieferzeit 10-14 Tag (e)
2+11.33 EUR
10+7.6 EUR
100+5.52 EUR
Mindestbestellmenge: 2 Stücke
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EPC2307EPCDescription: TRANS GAN 200V .010OHM 7QFN
Packaging: Cut Tape (CT)
Package / Case: 7-PowerWQFN
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: GaNFET (Gallium Nitride)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 48A (Ta)
Rds On (Max) @ Id, Vgs: 10mOhm @ 16A, 5V
Vgs(th) (Max) @ Id: 2.5V @ 4mA
Supplier Device Package: 7-QFN (3x5)
Drive Voltage (Max Rds On, Min Rds On): 5V
Vgs (Max): +6V, -4V
Drain to Source Voltage (Vdss): 200 V
Gate Charge (Qg) (Max) @ Vgs: 10.6 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 1401 pF @ 100 V
auf Bestellung 3245 Stücke:
Lieferzeit 10-14 Tag (e)
3+10.01 EUR
10+6.64 EUR
100+4.74 EUR
500+4.21 EUR
Mindestbestellmenge: 3 Stücke
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EPC2307EPCGaN FETs EPC eGaN FET,200 V, 10 milliohm at 5 V, 3 mm x 5 mm QFN
auf Bestellung 3887 Stücke:
Lieferzeit 10-14 Tag (e)
1+9.82 EUR
10+6.51 EUR
100+4.66 EUR
500+4.14 EUR
1000+3.97 EUR
3000+3.52 EUR
Im Einkaufswagen  Stück im Wert von  UAH
EPC2307EPCDescription: TRANS GAN 200V .010OHM 7QFN
Packaging: Tape & Reel (TR)
Package / Case: 7-PowerWQFN
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: GaNFET (Gallium Nitride)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 48A (Ta)
Rds On (Max) @ Id, Vgs: 10mOhm @ 16A, 5V
Vgs(th) (Max) @ Id: 2.5V @ 4mA
Supplier Device Package: 7-QFN (3x5)
Drive Voltage (Max Rds On, Min Rds On): 5V
Vgs (Max): +6V, -4V
Drain to Source Voltage (Vdss): 200 V
Gate Charge (Qg) (Max) @ Vgs: 10.6 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 1401 pF @ 100 V
auf Bestellung 3000 Stücke:
Lieferzeit 10-14 Tag (e)
3000+3.44 EUR
Mindestbestellmenge: 3000 Stücke
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EPC2307ENGRTEPCDescription: TRANS GAN 200V .010OHM 7QFN
Packaging: Cut Tape (CT)
Package / Case: 7-PowerWQFN
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: GaNFET (Gallium Nitride)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 48A (Ta)
Rds On (Max) @ Id, Vgs: 10mOhm @ 16A, 10V
Vgs(th) (Max) @ Id: 2.5V @ 4mA
Supplier Device Package: 7-QFN (3x5)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 5V
Vgs (Max): +6V, -4V
Drain to Source Voltage (Vdss): 200 V
Gate Charge (Qg) (Max) @ Vgs: 10.6 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 1401 pF @ 100 V
auf Bestellung 17984 Stücke:
Lieferzeit 10-14 Tag (e)
2+14.2 EUR
10+9.63 EUR
100+7.03 EUR
500+6.81 EUR
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EPC2307ENGRTEPCDescription: TRANS GAN 200V .010OHM 7QFN
Packaging: Tape & Reel (TR)
Package / Case: 7-PowerWQFN
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: GaNFET (Gallium Nitride)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 48A (Ta)
Rds On (Max) @ Id, Vgs: 10mOhm @ 16A, 10V
Vgs(th) (Max) @ Id: 2.5V @ 4mA
Supplier Device Package: 7-QFN (3x5)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 5V
Vgs (Max): +6V, -4V
Drain to Source Voltage (Vdss): 200 V
Gate Charge (Qg) (Max) @ Vgs: 10.6 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 1401 pF @ 100 V
auf Bestellung 9000 Stücke:
Lieferzeit 10-14 Tag (e)
3000+5.56 EUR
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EPC2308EPCGaN FETs EPC eGaN FET,150 V, 6 milliohm at 5 V, 3 mm x 5 mm QFN
auf Bestellung 5541 Stücke:
Lieferzeit 10-14 Tag (e)
1+9.4 EUR
10+6.24 EUR
100+4.46 EUR
500+4.3 EUR
1000+4.06 EUR
3000+3.62 EUR
Im Einkaufswagen  Stück im Wert von  UAH
EPC2308EPCDescription: TRANS GAN 150V .006OHM 7QFN
Packaging: Cut Tape (CT)
Package / Case: 7-PowerWQFN
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: GaNFET (Gallium Nitride)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 48A (Ta)
Rds On (Max) @ Id, Vgs: 6mOhm @ 15A, 5V
Vgs(th) (Max) @ Id: 2.5V @ 5mA
Supplier Device Package: 7-QFN (3x5)
Drive Voltage (Max Rds On, Min Rds On): 5V
Vgs (Max): +6V, -4V
Drain to Source Voltage (Vdss): 150 V
Gate Charge (Qg) (Max) @ Vgs: 13.8 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 2103 pF @ 75 V
auf Bestellung 4127 Stücke:
Lieferzeit 10-14 Tag (e)
3+10.25 EUR
10+6.82 EUR
100+4.87 EUR
500+4.36 EUR
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EPC2308EPCDescription: TRANS GAN 150V .006OHM 7QFN
Packaging: Tape & Reel (TR)
Package / Case: 7-PowerWQFN
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: GaNFET (Gallium Nitride)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 48A (Ta)
Rds On (Max) @ Id, Vgs: 6mOhm @ 15A, 5V
Vgs(th) (Max) @ Id: 2.5V @ 5mA
Supplier Device Package: 7-QFN (3x5)
Drive Voltage (Max Rds On, Min Rds On): 5V
Vgs (Max): +6V, -4V
Drain to Source Voltage (Vdss): 150 V
Gate Charge (Qg) (Max) @ Vgs: 13.8 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 2103 pF @ 75 V
Produkt ist nicht verfügbar
Mindestbestellmenge: 3000 Stücke
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EPC2308ENGRTEPCDescription: TRANS GAN 150V .006OHM 3X5PQFN
Packaging: Tape & Reel (TR)
Package / Case: 7-PowerWQFN
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: GaNFET (Gallium Nitride)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 48A (Tc)
Rds On (Max) @ Id, Vgs: 6mOhm @ 15A, 5V
Vgs(th) (Max) @ Id: 2.5V @ 5mA
Supplier Device Package: 7-QFN (3x5)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 5V
Vgs (Max): +6V, -4V
Drain to Source Voltage (Vdss): 150 V
Gate Charge (Qg) (Max) @ Vgs: 13.8 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 2103 pF @ 75 V
auf Bestellung 39000 Stücke:
Lieferzeit 10-14 Tag (e)
3000+4.74 EUR
Mindestbestellmenge: 3000 Stücke
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EPC2308ENGRTEPCDescription: TRANS GAN 150V .006OHM 3X5PQFN
Packaging: Cut Tape (CT)
Package / Case: 7-PowerWQFN
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: GaNFET (Gallium Nitride)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 48A (Tc)
Rds On (Max) @ Id, Vgs: 6mOhm @ 15A, 5V
Vgs(th) (Max) @ Id: 2.5V @ 5mA
Supplier Device Package: 7-QFN (3x5)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 5V
Vgs (Max): +6V, -4V
Drain to Source Voltage (Vdss): 150 V
Gate Charge (Qg) (Max) @ Vgs: 13.8 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 2103 pF @ 75 V
auf Bestellung 45753 Stücke:
Lieferzeit 10-14 Tag (e)
2+12.61 EUR
10+8.5 EUR
100+6.15 EUR
500+5.8 EUR
Mindestbestellmenge: 2 Stücke
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EPC23101ENGRTEPCDescription: TRANS GAN 100V EPOWER STAGE
Features: Bootstrap Circuit, Slew Rate Controlled
Packaging: Tape & Reel (TR)
Package / Case: 14-PowerWFQFN
Mounting Type: Surface Mount, Wettable Flank
Interface: Logic
Operating Temperature: -40°C ~ 125°C (TJ)
Output Configuration: Half Bridge
Voltage - Supply: 10V ~ 80V
Rds On (Typ): 3.3mOhm
Applications: General Purpose
Current - Output / Channel: 65A
Technology: Gallium Nitride (GaN) FETs
Voltage - Load: 10V ~ 80V
Supplier Device Package: 14-QFN (3.5x5)
Fault Protection: ESD, UVLO
Load Type: Inductive, Capacitive, Resistive
auf Bestellung 3000 Stücke:
Lieferzeit 10-14 Tag (e)
3000+8.31 EUR
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EPC23101ENGRTEPCDescription: TRANS GAN 100V EPOWER STAGE
Features: Bootstrap Circuit, Slew Rate Controlled
Packaging: Cut Tape (CT)
Package / Case: 14-PowerWFQFN
Mounting Type: Surface Mount, Wettable Flank
Interface: Logic
Operating Temperature: -40°C ~ 125°C (TJ)
Output Configuration: Half Bridge
Voltage - Supply: 10V ~ 80V
Rds On (Typ): 3.3mOhm
Applications: General Purpose
Current - Output / Channel: 65A
Technology: Gallium Nitride (GaN) FETs
Voltage - Load: 10V ~ 80V
Supplier Device Package: 14-QFN (3.5x5)
Fault Protection: ESD, UVLO
Load Type: Inductive, Capacitive, Resistive
auf Bestellung 4695 Stücke:
Lieferzeit 10-14 Tag (e)
2+14.41 EUR
10+11.16 EUR
25+10.35 EUR
100+9.46 EUR
250+9.04 EUR
500+8.78 EUR
1000+8.57 EUR
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EPC23102EPCDescription: IC HALF BRIDGE DRIVER 35A 13WQFN
Packaging: Cut Tape (CT)
Features: Bootstrap Circuit
Package / Case: 13-PowerWFQFN
Mounting Type: Surface Mount, Wettable Flank
Interface: PWM
Operating Temperature: -40°C ~ 125°C (TJ)
Output Configuration: Half Bridge
Voltage - Supply: 10V ~ 80V
Rds On (Typ): 6.6mOhm LS + HS
Applications: DC Motors, DC-DC Converters
Current - Output / Channel: 35A
Technology: MOSFET (Metal Oxide)
Voltage - Load: 10V ~ 80V
Supplier Device Package: 13-WQFN-HR (3.5x5)
Load Type: Inductive, Capacitive, Resistive
auf Bestellung 4753 Stücke:
Lieferzeit 10-14 Tag (e)
2+15.73 EUR
10+12.2 EUR
25+11.32 EUR
100+10.34 EUR
250+10.12 EUR
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EPC23102EPCDescription: IC HALF BRIDGE DRIVER 35A 13WQFN
Packaging: Tape & Reel (TR)
Features: Bootstrap Circuit
Package / Case: 13-PowerWFQFN
Mounting Type: Surface Mount, Wettable Flank
Interface: PWM
Operating Temperature: -40°C ~ 125°C (TJ)
Output Configuration: Half Bridge
Voltage - Supply: 10V ~ 80V
Rds On (Typ): 6.6mOhm LS + HS
Applications: DC Motors, DC-DC Converters
Current - Output / Channel: 35A
Technology: MOSFET (Metal Oxide)
Voltage - Load: 10V ~ 80V
Supplier Device Package: 13-WQFN-HR (3.5x5)
Load Type: Inductive, Capacitive, Resistive
Produkt ist nicht verfügbar
Mindestbestellmenge: 3000 Stücke
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EPC23102EPCGate Drivers Integrated Circuits 100 V ePower stage in FCQFN
auf Bestellung 3677 Stücke:
Lieferzeit 10-14 Tag (e)
1+14.99 EUR
10+11.65 EUR
25+10.78 EUR
100+9.87 EUR
250+9.42 EUR
500+9.15 EUR
1000+8.95 EUR
Im Einkaufswagen  Stück im Wert von  UAH
EPC23102ENGRTEPCDescription: IC HALF BRIDGE DRIVER 35A 13WQFN
Features: Bootstrap Circuit
Packaging: Cut Tape (CT)
Package / Case: 13-PowerWFQFN
Mounting Type: Surface Mount, Wettable Flank
Interface: Logic, PWM
Operating Temperature: -40°C ~ 125°C (TJ)
Output Configuration: Half Bridge
Voltage - Supply: 4.5V ~ 5.5V
Rds On (Typ): 5.2mOhm LS, 5.2mOhm HS
Applications: AC Motors, DC Motors, DC-DC Converters, General Purpose
Current - Output / Channel: 35A
Technology: Gallium Nitride (GaN) FETs
Voltage - Load: 10V ~ 80V
Supplier Device Package: 13-WQFN-HR (3.5x5)
Fault Protection: Current Limiting, ESD, Over Voltage, UVLO
Load Type: Inductive, Capacitive, Resistive
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
EPC23102ENGRTEPCDescription: IC HALF BRIDGE DRIVER 35A 13WQFN
Features: Bootstrap Circuit
Packaging: Tape & Reel (TR)
Package / Case: 13-PowerWFQFN
Mounting Type: Surface Mount, Wettable Flank
Interface: Logic, PWM
Operating Temperature: -40°C ~ 125°C (TJ)
Output Configuration: Half Bridge
Voltage - Supply: 4.5V ~ 5.5V
Rds On (Typ): 5.2mOhm LS, 5.2mOhm HS
Applications: AC Motors, DC Motors, DC-DC Converters, General Purpose
Current - Output / Channel: 35A
Technology: Gallium Nitride (GaN) FETs
Voltage - Load: 10V ~ 80V
Supplier Device Package: 13-WQFN-HR (3.5x5)
Fault Protection: Current Limiting, ESD, Over Voltage, UVLO
Load Type: Inductive, Capacitive, Resistive
Produkt ist nicht verfügbar
Mindestbestellmenge: 3000 Stücke
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EPC23103ENGRTEPCDescription: IC GAN EPOWER STAGE 100V 20A
Features: Bootstrap Circuit, Slew Rate Controlled
Packaging: Cut Tape (CT)
Package / Case: 13-PowerWFQFN
Mounting Type: Surface Mount, Wettable Flank
Interface: Logic
Operating Temperature: -40°C ~ 125°C (TJ)
Output Configuration: Half Bridge
Voltage - Supply: 10V ~ 80V
Rds On (Typ): 7.6mOhm LS + HS
Applications: DC Motors, DC-DC Converters
Current - Output / Channel: 25A
Current - Peak Output: 109A
Technology: Gallium Nitride (GaN) FETs
Voltage - Load: 10V ~ 80V
Supplier Device Package: 13-WQFN-HR (3.5x5)
Fault Protection: ESD, Over Voltage, Short Circuit
Load Type: Capacitive and Resistive
auf Bestellung 482 Stücke:
Lieferzeit 10-14 Tag (e)
2+11.22 EUR
10+10.14 EUR
25+9.66 EUR
100+8.39 EUR
250+8.02 EUR
Mindestbestellmenge: 2 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
EPC23103ENGRTEPCDescription: IC GAN EPOWER STAGE 100V 20A
Features: Bootstrap Circuit, Slew Rate Controlled
Packaging: Tape & Reel (TR)
Package / Case: 13-PowerWFQFN
Mounting Type: Surface Mount, Wettable Flank
Interface: Logic
Operating Temperature: -40°C ~ 125°C (TJ)
Output Configuration: Half Bridge
Voltage - Supply: 10V ~ 80V
Rds On (Typ): 7.6mOhm LS + HS
Applications: DC Motors, DC-DC Converters
Current - Output / Channel: 25A
Current - Peak Output: 109A
Technology: Gallium Nitride (GaN) FETs
Voltage - Load: 10V ~ 80V
Supplier Device Package: 13-WQFN-HR (3.5x5)
Fault Protection: ESD, Over Voltage, Short Circuit
Load Type: Capacitive and Resistive
Produkt ist nicht verfügbar
Mindestbestellmenge: 3000 Stücke
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EPC23104EPCDescription: IC GAN EPWR STAGE 100V 10A 13QFN
Features: Bootstrap Circuit, Slew Rate Controlled
Packaging: Tape & Reel (TR)
Package / Case: 13-PowerWFQFN
Mounting Type: Surface Mount, Wettable Flank
Interface: Logic
Operating Temperature: -40°C ~ 125°C (TJ)
Output Configuration: Half Bridge
Voltage - Supply: 10V ~ 80V
Rds On (Typ): 7.6mOhm LS + HS
Applications: DC Motors, DC-DC Converters
Current - Output / Channel: 15A
Current - Peak Output: 78A
Technology: NMOS
Voltage - Load: 10V ~ 80V
Supplier Device Package: 13-WQFN-HR (3.5x5)
Fault Protection: ESD, Over Voltage, Short Circuit
Load Type: Capacitive and Resistive
Produkt ist nicht verfügbar
Mindestbestellmenge: 3000 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
EPC23104EPCDescription: IC GAN EPWR STAGE 100V 10A 13QFN
Packaging: Cut Tape (CT)
Features: Bootstrap Circuit, Slew Rate Controlled
Package / Case: 13-PowerWFQFN
Mounting Type: Surface Mount, Wettable Flank
Interface: Logic
Operating Temperature: -40°C ~ 125°C (TJ)
Output Configuration: Half Bridge
Voltage - Supply: 10V ~ 80V
Rds On (Typ): 7.6mOhm LS + HS
Applications: DC Motors, DC-DC Converters
Current - Output / Channel: 15A
Current - Peak Output: 78A
Technology: NMOS
Voltage - Load: 10V ~ 80V
Supplier Device Package: 13-WQFN-HR (3.5x5)
Fault Protection: ESD, Over Voltage, Short Circuit
Load Type: Capacitive and Resistive
auf Bestellung 399 Stücke:
Lieferzeit 10-14 Tag (e)
3+9.26 EUR
10+7.04 EUR
25+6.5 EUR
100+5.89 EUR
250+5.62 EUR
Mindestbestellmenge: 3 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
EPC23104ENGRTEPCDescription: IC HALF BRIDGE DRIVER 15A 13WQFN
Features: Bootstrap Circuit, Slew Rate Controlled
Packaging: Tape & Reel (TR)
Package / Case: 13-PowerWFQFN
Mounting Type: Surface Mount, Wettable Flank
Interface: Logic
Operating Temperature: -40°C ~ 125°C (TJ)
Output Configuration: Half Bridge
Voltage - Supply: 10V ~ 80V
Rds On (Typ): 7.6mOhm LS + HS
Applications: DC Motors, DC-DC Converters
Current - Output / Channel: 15A
Current - Peak Output: 78A
Technology: Gallium Nitride (GaN) FETs
Voltage - Load: 10V ~ 80V
Supplier Device Package: 13-WQFN-HR (3.5x5)
Fault Protection: ESD, Over Voltage, Short Circuit
Load Type: Capacitive and Resistive
auf Bestellung 3000 Stücke:
Lieferzeit 10-14 Tag (e)
3000+5.11 EUR
Mindestbestellmenge: 3000 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
EPC23104ENGRTEPCDescription: IC HALF BRIDGE DRIVER 15A 13WQFN
Features: Bootstrap Circuit, Slew Rate Controlled
Packaging: Cut Tape (CT)
Package / Case: 13-PowerWFQFN
Mounting Type: Surface Mount, Wettable Flank
Interface: Logic
Operating Temperature: -40°C ~ 125°C (TJ)
Output Configuration: Half Bridge
Voltage - Supply: 10V ~ 80V
Rds On (Typ): 7.6mOhm LS + HS
Applications: DC Motors, DC-DC Converters
Current - Output / Channel: 15A
Current - Peak Output: 78A
Technology: Gallium Nitride (GaN) FETs
Voltage - Load: 10V ~ 80V
Supplier Device Package: 13-WQFN-HR (3.5x5)
Fault Protection: ESD, Over Voltage, Short Circuit
Load Type: Capacitive and Resistive
auf Bestellung 10802 Stücke:
Lieferzeit 10-14 Tag (e)
3+9.26 EUR
10+7.04 EUR
25+6.5 EUR
100+5.89 EUR
250+5.62 EUR
Mindestbestellmenge: 3 Stücke
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EPC2361EPCDescription: TRANS GAN 100V DIE,1 MOHM, 7PINQ
Packaging: Cut Tape (CT)
Package / Case: 7-PowerWQFN
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: GaNFET (Gallium Nitride)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 101A (Ta)
Rds On (Max) @ Id, Vgs: 1mOhm @ 50A, 5V
Vgs(th) (Max) @ Id: 2.5V @ 15mA
Supplier Device Package: 7-QFN (3x5)
Drive Voltage (Max Rds On, Min Rds On): 5V
Vgs (Max): +6V, -4V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 28 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 4094 pF @ 50 V
auf Bestellung 54237 Stücke:
Lieferzeit 10-14 Tag (e)
2+16.34 EUR
10+11.16 EUR
100+8.22 EUR
500+8.18 EUR
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EPC2361EPCGaN FETs EPC eGaN FET,80 V, 1.0 milliohm at 5 V, 3 mm x 5 mm QFN
auf Bestellung 7539 Stücke:
Lieferzeit 10-14 Tag (e)
1+16.4 EUR
10+11.21 EUR
100+8.27 EUR
500+8.21 EUR
1000+7.19 EUR
3000+6.97 EUR
Im Einkaufswagen  Stück im Wert von  UAH
EPC2361EPCDescription: TRANS GAN 100V DIE,1 MOHM, 7PINQ
Packaging: Tape & Reel (TR)
Package / Case: 7-PowerWQFN
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: GaNFET (Gallium Nitride)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 101A (Ta)
Rds On (Max) @ Id, Vgs: 1mOhm @ 50A, 5V
Vgs(th) (Max) @ Id: 2.5V @ 15mA
Supplier Device Package: 7-QFN (3x5)
Drive Voltage (Max Rds On, Min Rds On): 5V
Vgs (Max): +6V, -4V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 28 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 4094 pF @ 50 V
auf Bestellung 54000 Stücke:
Lieferzeit 10-14 Tag (e)
3000+6.69 EUR
Mindestbestellmenge: 3000 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
EPC2361ENGRTEPCDescription: TRANS GAN 100V .001OHM 7QFN
Packaging: Cut Tape (CT)
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
EPC2361ENGRTEPCDescription: TRANS GAN 100V .001OHM 7QFN
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar
Mindestbestellmenge: 3000 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
EPC2366ENGRTEPCDescription: TRANS GAN 40V DIE,0.8 MOHM,5PINQ
Packaging: Cut Tape (CT)
Package / Case: 5-PowerWQFN
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: GaNFET (Gallium Nitride)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 88A
Rds On (Max) @ Id, Vgs: 0.8Ohm @ 30A, 5V
Vgs(th) (Max) @ Id: 2.5V @ 12mA
Supplier Device Package: 5-QFN (3.3x2.6)
Drive Voltage (Max Rds On, Min Rds On): 5V
Vgs (Max): +6V, -4V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 13 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 2645 pF @ 20 V
auf Bestellung 443 Stücke:
Lieferzeit 10-14 Tag (e)
3+7.88 EUR
10+5.19 EUR
100+3.67 EUR
Mindestbestellmenge: 3 Stücke
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EPC2366ENGRTEPCDescription: TRANS GAN 40V DIE,0.8 MOHM,5PINQ
Packaging: Tape & Reel (TR)
Package / Case: 5-PowerWQFN
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: GaNFET (Gallium Nitride)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 88A
Rds On (Max) @ Id, Vgs: 0.8Ohm @ 30A, 5V
Vgs(th) (Max) @ Id: 2.5V @ 12mA
Supplier Device Package: 5-QFN (3.3x2.6)
Drive Voltage (Max Rds On, Min Rds On): 5V
Vgs (Max): +6V, -4V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 13 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 2645 pF @ 20 V
Produkt ist nicht verfügbar
Mindestbestellmenge: 3000 Stücke
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EPC2367EPCDescription: TRANS GAN 100V DIE,1.5 MOHM, 5PI
Packaging: Cut Tape (CT)
Package / Case: 5-PowerWQFN
Mounting Type: Surface Mount, Wettable Flank
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: GaNFET (Gallium Nitride)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 78A (Tj)
Rds On (Max) @ Id, Vgs: 1.2mOhm @ 30A, 5V
Vgs(th) (Max) @ Id: 2.5V @ 10mA
Supplier Device Package: 5-QFN (3.3x3.3)
Drive Voltage (Max Rds On, Min Rds On): 5V
Vgs (Max): +6V, -4V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 17 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 2170 pF @ 50 V
auf Bestellung 30460 Stücke:
Lieferzeit 10-14 Tag (e)
2+13.53 EUR
10+9.14 EUR
100+6.64 EUR
500+6.32 EUR
Mindestbestellmenge: 2 Stücke
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EPC2367EPCGaN FETs EPC eGaN FET,100 V, 1.2 milliohm at 5 V(typ), 3.3 mm x 3.3 mm QFN
auf Bestellung 5528 Stücke:
Lieferzeit 10-14 Tag (e)
1+13.28 EUR
10+8.96 EUR
100+6.51 EUR
500+6.22 EUR
1000+5.43 EUR
3000+5.28 EUR
Im Einkaufswagen  Stück im Wert von  UAH
EPC2367EPCDescription: TRANS GAN 100V DIE,1.5 MOHM, 5PI
Packaging: Tape & Reel (TR)
Package / Case: 5-PowerWQFN
Mounting Type: Surface Mount, Wettable Flank
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: GaNFET (Gallium Nitride)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 78A (Tj)
Rds On (Max) @ Id, Vgs: 1.2mOhm @ 30A, 5V
Vgs(th) (Max) @ Id: 2.5V @ 10mA
Supplier Device Package: 5-QFN (3.3x3.3)
Drive Voltage (Max Rds On, Min Rds On): 5V
Vgs (Max): +6V, -4V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 17 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 2170 pF @ 50 V
auf Bestellung 30000 Stücke:
Lieferzeit 10-14 Tag (e)
3000+5.16 EUR
Mindestbestellmenge: 3000 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
EPC2367AEPC
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
EPC241BPRIGOHDIP24
auf Bestellung 7 Stücke:
Lieferzeit 21-28 Tag (e)
Im Einkaufswagen  Stück im Wert von  UAH
EPC2619EPCDescription: TRANS GAN 100V .0042 OHM 6LGA
Packaging: Tape & Reel (TR)
Package / Case: Die
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: GaNFET (Gallium Nitride)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 29A (Ta)
Rds On (Max) @ Id, Vgs: 3.3mOhm @ 16A, 5V
Vgs(th) (Max) @ Id: 2.5V @ 5.5mA
Supplier Device Package: Die
Drive Voltage (Max Rds On, Min Rds On): 5V
Vgs (Max): +6V, -4V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 8.3 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 1180 pF @ 50 V
auf Bestellung 1000 Stücke:
Lieferzeit 10-14 Tag (e)
Mindestbestellmenge: 1000 Stücke
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EPC2619EPCDescription: TRANS GAN 100V .0042 OHM 6LGA
Packaging: Cut Tape (CT)
Package / Case: Die
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: GaNFET (Gallium Nitride)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 29A (Ta)
Rds On (Max) @ Id, Vgs: 3.3mOhm @ 16A, 5V
Vgs(th) (Max) @ Id: 2.5V @ 5.5mA
Supplier Device Package: Die
Drive Voltage (Max Rds On, Min Rds On): 5V
Vgs (Max): +6V, -4V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 8.3 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 1180 pF @ 50 V
auf Bestellung 1741 Stücke:
Lieferzeit 10-14 Tag (e)
3+8.98 EUR
10+5.94 EUR
100+4.21 EUR
500+3.65 EUR
Mindestbestellmenge: 3 Stücke
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EPC2619EPCGaN FETs EPC eGaN FET,100 V, 3.3 milliohm typ at 5 V, LGA 2.5 x 1.5
auf Bestellung 1399 Stücke:
Lieferzeit 10-14 Tag (e)
1+8.25 EUR
10+5.45 EUR
100+3.88 EUR
500+3.58 EUR
1000+3.42 EUR
2500+3.06 EUR
Im Einkaufswagen  Stück im Wert von  UAH
EPC2619ENGRTEPCDescription: TRANS GAN 80V .0033OHM 6LGA
Packaging: Tape & Reel (TR)
Package / Case: Die
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: GaNFET (Gallium Nitride)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 29A (Ta)
Rds On (Max) @ Id, Vgs: 3.3mOhm @ 16A, 5V
Vgs(th) (Max) @ Id: 2.5V @ 5.5mA
Supplier Device Package: Die
Drive Voltage (Max Rds On, Min Rds On): 5V
Vgs (Max): +6V, -4V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 8.3 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 1180 pF @ 50 V
Produkt ist nicht verfügbar
Mindestbestellmenge: 10000 Stücke
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EPC2619ENGRTEPCDescription: TRANS GAN 80V .0033OHM 6LGA
Packaging: Cut Tape (CT)
Package / Case: Die
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: GaNFET (Gallium Nitride)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 29A (Ta)
Rds On (Max) @ Id, Vgs: 3.3mOhm @ 16A, 5V
Vgs(th) (Max) @ Id: 2.5V @ 5.5mA
Supplier Device Package: Die
Drive Voltage (Max Rds On, Min Rds On): 5V
Vgs (Max): +6V, -4V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 8.3 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 1180 pF @ 50 V
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
EPC2801EPCDescription: TRANS GAN 100V 25A BUMPED DIE
auf Bestellung 354 Stücke:
Lieferzeit 10-14 Tag (e)
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EPC2801EPCDescription: TRANS GAN 100V 25A BUMPED DIE
auf Bestellung 354 Stücke:
Lieferzeit 10-14 Tag (e)
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EPC2801EPCDescription: TRANS GAN 100V 25A BUMPED DIE
auf Bestellung 300 Stücke:
Lieferzeit 10-14 Tag (e)
Mindestbestellmenge: 100 Stücke
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EPC2815EPCDescription: TRANS GAN 40V 33A BUMPED DIE
auf Bestellung 12 Stücke:
Lieferzeit 10-14 Tag (e)
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EPC2815EPCDescription: TRANS GAN 40V 33A BUMPED DIE
auf Bestellung 12 Stücke:
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EPC2815EPCDescription: TRANS GAN 40V 33A BUMPED DIE
Produkt ist nicht verfügbar
Mindestbestellmenge: 100 Stücke
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EPC2818EPCDescription: TRANS GAN 150V 12A BUMPED DIE
auf Bestellung 400 Stücke:
Lieferzeit 10-14 Tag (e)
Mindestbestellmenge: 100 Stücke
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EPC2818EPCDescription: TRANS GAN 150V 12A BUMPED DIE
auf Bestellung 705 Stücke:
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EPC2818EPCDescription: TRANS GAN 150V 12A BUMPED DIE
auf Bestellung 705 Stücke:
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EPC2FSAutomation Components, Inc.Description: Analog Input (0-5VDC), Pressure
Packaging: Tape & Box (TB)
For Use With/Related Products: Sensors, Transmitters
Accessory Type: Converter
Part Status: Active
auf Bestellung 1 Stücke:
Lieferzeit 10-14 Tag (e)
1+628.32 EUR
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EPC2GAutomation Components, Inc.Description: Analog Input (0-5VDC), Pressure
Packaging: Tape & Box (TB)
For Use With/Related Products: Sensors, Transmitters
Accessory Type: Converter
Part Status: Active
auf Bestellung 1 Stücke:
Lieferzeit 10-14 Tag (e)
1+523.6 EUR
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EPC2GBAutomation Components, Inc.Description: Analog Input (0-5VDC), Pressure
Packaging: Tape & Box (TB)
For Use With/Related Products: Sensors, Transmitters
Accessory Type: Converter
Part Status: Active
auf Bestellung 1 Stücke:
Lieferzeit 10-14 Tag (e)
1+615.75 EUR
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EPC2GFSAutomation Components, Inc.Description: Analog Input (0-5VDC), Pressure
Packaging: Tape & Box (TB)
For Use With/Related Products: Sensors, Transmitters
Accessory Type: Converter
Part Status: Active
auf Bestellung 1 Stücke:
Lieferzeit 10-14 Tag (e)
1+628.32 EUR
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EPC2GFSBAutomation Components, Inc.Description: Analog Input (0-5VDC), Pressure
Packaging: Tape & Box (TB)
For Use With/Related Products: Sensors, Transmitters
Accessory Type: Converter
Part Status: Active
auf Bestellung 1 Stücke:
Lieferzeit 10-14 Tag (e)
1+739.32 EUR
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EPC2L120Altera
auf Bestellung 21 Stücke:
Lieferzeit 21-28 Tag (e)
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EPC2L20ALTERAPLCC20
auf Bestellung 85 Stücke:
Lieferzeit 21-28 Tag (e)
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EPC2LC2Altera
auf Bestellung 166 Stücke:
Lieferzeit 21-28 Tag (e)
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EPC2LC20ALTERAPLCC
auf Bestellung 3325 Stücke:
Lieferzeit 21-28 Tag (e)
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EPC2LC20AlteraМікросхеми програмованої логіки
Produkt ist nicht verfügbar
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EPC2LC20IntelConfiguration SRAM for FBGA
auf Bestellung 2148 Stücke:
Lieferzeit 14-21 Tag (e)
1+312.96 EUR
10+205.66 EUR
50+172.44 EUR
100+118.04 EUR
500+109.67 EUR
1000+104.05 EUR
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EPC2LC20Intel / AlteraFPGA - Configuration Memory IC - Ser. Config Mem Flash 1.6Mb 10 MHz
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EPC2LC20IntelDescription: IC CONFIG DEVICE 1.6MBIT 20PLCC
Produkt ist nicht verfügbar
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EPC2LC20
Produktcode: 79584
zu Favoriten hinzufügen Lieblingsprodukt

8542 39 90 00
Produkt ist nicht verfügbar
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EPC2LC20Altera/IntelКонфигурационная память EPROM для семейства FLEX, 1695680 x 1 bit, Vcc=5.0 or 3.3 V... Інтегральні мікросхеми Корпус: PLCC-20 Од. вим: шт
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EPC2LC20IntelConfiguration SRAM for FBGA
auf Bestellung 2148 Stücke:
Lieferzeit 14-21 Tag (e)
1+312.96 EUR
10+201.18 EUR
50+166.06 EUR
100+111.78 EUR
500+101.23 EUR
1000+93.49 EUR
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