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AON-1302SRA Soldering ProductsDescription: AOYUE 1302 FLAT TIP FOR HOT TWEE
Packaging: Bag
Length: 0.512" (13.00mm)
Width: 0.079" (2.00mm)
Tip Type: Tweezer
Part Status: Active
Tip Chip Size: Chip
auf Bestellung 7 Stücke:
Lieferzeit 10-14 Tag (e)
1+22.22 EUR
5+20.16 EUR
Im Einkaufswagen  Stück im Wert von  UAH
AON-1305SRA Soldering ProductsDescription: AOYUE 1305 FLAT TIP FOR HOT TWEE
Packaging: Bag
Length: 0.512" (13.00mm)
Width: 0.197" (5.00mm)
Tip Type: Tweezer
Part Status: Active
Tip Chip Size: Chip
auf Bestellung 6 Stücke:
Lieferzeit 10-14 Tag (e)
1+21.72 EUR
5+19.69 EUR
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AON-1310SRA Soldering ProductsDescription: AOYUE 1310 LARGE FLAT TIP FOR HO
Tip Chip Size: Chip
Tip Type: Tweezer
Width: 0.394" (10.00mm)
Length: 0.512" (13.00mm)
Packaging: Bag
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
AON-1315SRA Soldering ProductsDescription: AOYUE 1315 LARGE FLAT TIP FOR HO
Tip Chip Size: Chip
Part Status: Active
Tip Type: Tweezer
Width: 0.591" (15.00mm)
Length: 0.512" (13.00mm)
Packaging: Bag
auf Bestellung 7 Stücke:
Lieferzeit 10-14 Tag (e)
1+21.42 EUR
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AON-1320SRA Soldering ProductsDescription: AOYUE 1320 LARGE FLAT TIP FOR HO
Packaging: Bag
Length: 0.512" (13.00mm)
Width: 0.787" (20.00mm)
Tip Type: Tweezer
Part Status: Active
Tip Chip Size: Chip
auf Bestellung 3 Stücke:
Lieferzeit 10-14 Tag (e)
2+19.31 EUR
Mindestbestellmenge: 2 Stücke
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AON1605AOSMOSFET P-CH 20V 700MA 3DFN Транзистори
Produkt ist nicht verfügbar
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AON1605Alpha & Omega Semiconductor Inc.Description: MOSFET P-CH 20V 0.7A 3DFN
Produkt ist nicht verfügbar
 Mindestbestellmenge: 12000 Stücke
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AON1605_001Alpha & Omega Semiconductor Inc.Description: MOSFET P-CH 20V 0.7A 3DFN
Produkt ist nicht verfügbar
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AON1606AOSMOSFET N-CH 20V 700MA 3DFN Транзистори
Produkt ist nicht verfügbar
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AON1606Alpha & Omega SemiconductorTrans MOSFET N-CH 20V 0.7A 3-Pin DFN T/R
Produkt ist nicht verfügbar
 Mindestbestellmenge: 10000 Stücke
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AON1606Alpha & Omega Semiconductor Inc.Description: MOSFET N-CH 20V 700MA 3DFN
Input Capacitance (Ciss) (Max) @ Vds: 62.5 pF @ 10 V
Gate Charge (Qg) (Max) @ Vgs: 0.85 nC @ 4.5 V
Drain to Source Voltage (Vdss): 20 V
Vgs (Max): ±8V
Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4.5V
Supplier Device Package: 3-DFN (1.0 x 0.60)
Vgs(th) (Max) @ Id: 1V @ 250µA
Power Dissipation (Max): 900mW (Ta)
Rds On (Max) @ Id, Vgs: 275mOhm @ 400mA, 4.5V
Current - Continuous Drain (Id) @ 25°C: 700mA (Ta)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 3-UFDFN
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar
 Mindestbestellmenge: 10000 Stücke
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AON1606_001Alpha & Omega Semiconductor Inc.Description: MOSFET N-CH 20V 700MA 3DFN
Produkt ist nicht verfügbar
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AON1610Alpha & Omega Semiconductor Inc.Description: MOSFET N-CH 20V 4A 6DFN
Produkt ist nicht verfügbar
 Mindestbestellmenge: 6000 Stücke
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AON1611Alpha & Omega Semiconductor Inc.Description: MOSFET P-CH 20V 4A 6DFN
Produkt ist nicht verfügbar
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AON1611Alpha & Omega Semiconductor Inc.Description: MOSFET P-CH 20V 4A 6DFN
Produkt ist nicht verfügbar
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AON1620Alpha & Omega Semiconductor Inc.Description: MOSFET N-CH 12V 4A 6DFN
Produkt ist nicht verfügbar
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AON1634Alpha & Omega Semiconductor Inc.Description: MOSFET N-CH 30V 4A 6DFN
Packaging: Tape & Reel (TR)
Package / Case: 6-PowerUFDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 4A (Ta)
Rds On (Max) @ Id, Vgs: 54mOhm @ 4A, 10V
Power Dissipation (Max): 1.8W (Ta)
Vgs(th) (Max) @ Id: 1.5V @ 250µA
Supplier Device Package: 6-DFN (1.6x1.6)
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 10V
Vgs (Max): ±12V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 10 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 245 pF @ 15 V
Produkt ist nicht verfügbar
 Mindestbestellmenge: 6000 Stücke
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AON1634Alpha & Omega Semiconductor Inc.Description: MOSFET N-CH 30V 4A 6DFN
Packaging: Cut Tape (CT)
Package / Case: 6-PowerUFDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 4A (Ta)
Rds On (Max) @ Id, Vgs: 54mOhm @ 4A, 10V
Power Dissipation (Max): 1.8W (Ta)
Vgs(th) (Max) @ Id: 1.5V @ 250µA
Supplier Device Package: 6-DFN (1.6x1.6)
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 10V
Vgs (Max): ±12V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 10 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 245 pF @ 15 V
Produkt ist nicht verfügbar
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AON1634AOSMOSFET N-CH 30V 4A 6DFN Транзистори
Produkt ist nicht verfügbar
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AON2240Alpha & Omega Semiconductor Inc.Description: MOSFET N-CH 40V 8A 6DFN
Packaging: Cut Tape (CT)
Package / Case: 6-UDFN Exposed Pad
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 8A (Ta)
Rds On (Max) @ Id, Vgs: 21mOhm @ 8A, 10V
Power Dissipation (Max): 2.8W (Ta)
Vgs(th) (Max) @ Id: 2.4V @ 250µA
Supplier Device Package: 6-DFN (2x2)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 12 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 415 pF @ 20 V
Produkt ist nicht verfügbar
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AON2240Alpha & Omega SemiconductorTrans MOSFET N-CH 40V 8A 6-Pin DFN-B EP T/R
Produkt ist nicht verfügbar
 Mindestbestellmenge: 3000 Stücke
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AON2240Alpha & Omega Semiconductor Inc.Description: MOSFET N-CH 40V 8A 6DFN
Packaging: Tape & Reel (TR)
Package / Case: 6-UDFN Exposed Pad
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 8A (Ta)
Rds On (Max) @ Id, Vgs: 21mOhm @ 8A, 10V
Power Dissipation (Max): 2.8W (Ta)
Vgs(th) (Max) @ Id: 2.4V @ 250µA
Supplier Device Package: 6-DFN (2x2)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 12 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 415 pF @ 20 V
Produkt ist nicht verfügbar
 Mindestbestellmenge: 3000 Stücke
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AON2260Alpha & Omega SemiconductorTrans MOSFET N-CH 60V 6A 6-Pin DFN-B EP T/R
Produkt ist nicht verfügbar
 Mindestbestellmenge: 3000 Stücke
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AON2260Alpha & Omega Semiconductor Inc.Description: MOSFET N-CH 60V 6A 6DFN
Packaging: Cut Tape (CT)
Package / Case: 6-UDFN Exposed Pad
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 6A (Ta)
Rds On (Max) @ Id, Vgs: 44mOhm @ 6A, 10V
Power Dissipation (Max): 2.8W (Ta)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: 6-DFN (2x2)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 12 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 426 pF @ 30 V
auf Bestellung 5690 Stücke:
Lieferzeit 10-14 Tag (e)
12+1.84 EUR
19+1.14 EUR
100+0.74 EUR
500+0.57 EUR
1000+0.51 EUR
Mindestbestellmenge: 12 Stücke
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AON2260Alpha & Omega SemiconductorTrans MOSFET N-CH 60V 6A 6-Pin DFN-B EP T/R
Produkt ist nicht verfügbar
 Mindestbestellmenge: 3000 Stücke
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AON2260Alpha & Omega Semiconductor Inc.Description: MOSFET N-CH 60V 6A 6DFN
Packaging: Tape & Reel (TR)
Package / Case: 6-UDFN Exposed Pad
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 6A (Ta)
Rds On (Max) @ Id, Vgs: 44mOhm @ 6A, 10V
Power Dissipation (Max): 2.8W (Ta)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: 6-DFN (2x2)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 12 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 426 pF @ 30 V
auf Bestellung 3000 Stücke:
Lieferzeit 10-14 Tag (e)
3000+0.44 EUR
Mindestbestellmenge: 3000 Stücke
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AON2290Alpha & Omega Semiconductor Inc.Description: MOSFET N CH 100V 4.5A DFN 2X2B
Packaging: Cut Tape (CT)
Package / Case: 6-UDFN Exposed Pad
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 4.5A (Ta)
Rds On (Max) @ Id, Vgs: 72mOhm @ 4.5A, 10V
Power Dissipation (Max): 2.8W (Ta)
Vgs(th) (Max) @ Id: 2.8V @ 250µA
Supplier Device Package: 6-DFN (2x2)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 12 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 415 pF @ 50 V
auf Bestellung 6975 Stücke:
Lieferzeit 10-14 Tag (e)
12+1.84 EUR
19+1.14 EUR
100+0.75 EUR
500+0.57 EUR
1000+0.51 EUR
Mindestbestellmenge: 12 Stücke
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AON2290Alpha & Omega SemiconductorTrans MOSFET N-CH 100V 4.5A 6-Pin DFN-B EP T/R
Produkt ist nicht verfügbar
 Mindestbestellmenge: 3000 Stücke
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AON2290AOSMOSFET N CH 100V 4.5A DFN-6 Транзистори
Produkt ist nicht verfügbar
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AON2290Alpha & Omega Semiconductor Inc.Description: MOSFET N CH 100V 4.5A DFN 2X2B
Packaging: Tape & Reel (TR)
Package / Case: 6-UDFN Exposed Pad
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 4.5A (Ta)
Rds On (Max) @ Id, Vgs: 72mOhm @ 4.5A, 10V
Power Dissipation (Max): 2.8W (Ta)
Vgs(th) (Max) @ Id: 2.8V @ 250µA
Supplier Device Package: 6-DFN (2x2)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 12 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 415 pF @ 50 V
auf Bestellung 6000 Stücke:
Lieferzeit 10-14 Tag (e)
3000+0.44 EUR
6000+0.4 EUR
Mindestbestellmenge: 3000 Stücke
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AON2290Alpha & Omega SemiconductorTrans MOSFET N-CH 100V 4.5A 6-Pin DFN-B EP T/R
Produkt ist nicht verfügbar
 Mindestbestellmenge: 3000 Stücke
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AON2392Alpha & Omega Semiconductor Inc.Description: MOSFET N-CHANNEL 100V 8A 8DFN
Produkt ist nicht verfügbar
 Mindestbestellmenge: 3000 Stücke
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AON2400Alpha & Omega Semiconductor Inc.Description: MOSFET N-CH 8V 8A 6DFN
Packaging: Tape & Reel (TR)
Package / Case: 6-UDFN Exposed Pad
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 8A (Ta)
Rds On (Max) @ Id, Vgs: 11mOhm @ 8A, 2.5V
Power Dissipation (Max): 2.8W (Ta)
Vgs(th) (Max) @ Id: 750mV @ 250µA
Supplier Device Package: 6-DFN (2x2)
Drive Voltage (Max Rds On, Min Rds On): 1.2V, 2.5V
Vgs (Max): ±5V
Drain to Source Voltage (Vdss): 8 V
Gate Charge (Qg) (Max) @ Vgs: 16 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 1645 pF @ 4 V
Produkt ist nicht verfügbar
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AON2401Alpha & Omega Semiconductor Inc.Description: MOSFET P-CH 8V 8A 6DFN
Produkt ist nicht verfügbar
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AON2401Alpha & Omega Semiconductor Inc.Description: MOSFET P-CH 8V 8A 6DFN
Produkt ist nicht verfügbar
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AON2403Alpha & Omega Semiconductor Inc.Description: MOSFET P-CH 12V 8A 6DFN
Packaging: Tape & Reel (TR)
Package / Case: 6-UDFN Exposed Pad
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 8A (Ta)
Rds On (Max) @ Id, Vgs: 21mOhm @ 8A, 4.5V
Power Dissipation (Max): 2.8W (Ta)
Vgs(th) (Max) @ Id: 900mV @ 250µA
Supplier Device Package: 6-DFN (2x2)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4.5V
Vgs (Max): ±8V
Drain to Source Voltage (Vdss): 12 V
Gate Charge (Qg) (Max) @ Vgs: 18 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 1370 pF @ 6 V
Produkt ist nicht verfügbar
 Mindestbestellmenge: 3000 Stücke
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AON2403Alpha & Omega SemiconductorTrans MOSFET P-CH 12V 8A 6-Pin DFN-B EP T/R
Produkt ist nicht verfügbar
 Mindestbestellmenge: 3000 Stücke
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AON2403Alpha & Omega Semiconductor Inc.Description: MOSFET P-CH 12V 8A 6DFN
Packaging: Cut Tape (CT)
Package / Case: 6-UDFN Exposed Pad
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 8A (Ta)
Rds On (Max) @ Id, Vgs: 21mOhm @ 8A, 4.5V
Power Dissipation (Max): 2.8W (Ta)
Vgs(th) (Max) @ Id: 900mV @ 250µA
Supplier Device Package: 6-DFN (2x2)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4.5V
Vgs (Max): ±8V
Drain to Source Voltage (Vdss): 12 V
Gate Charge (Qg) (Max) @ Vgs: 18 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 1370 pF @ 6 V
auf Bestellung 2665 Stücke:
Lieferzeit 10-14 Tag (e)
17+1.27 EUR
25+0.86 EUR
100+0.58 EUR
500+0.46 EUR
1000+0.42 EUR
Mindestbestellmenge: 17 Stücke
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AON2403ALPHA & OMEGA SEMICONDUCTORCategory: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -12V; -6A; 1.8W; DFN6
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -12V
Drain current: -6A
Power dissipation: 1.8W
Case: DFN6
Gate-source voltage: ±8V
Mounting: SMD
Gate charge: 12.7nC
Kind of channel: enhancement
Produkt ist nicht verfügbar
 Mindestbestellmenge: 3000 Stücke
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AON2405Alpha & Omega SemiconductorTrans MOSFET P-CH 20V 8A 6-Pin DFN-B EP T/R
Produkt ist nicht verfügbar
 Mindestbestellmenge: 3000 Stücke
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AON2405Alpha & Omega Semiconductor Inc.Description: MOSFET P-CH 20V 8A 6DFN
Packaging: Cut Tape (CT)
Package / Case: 6-UDFN Exposed Pad
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 8A (Ta)
Rds On (Max) @ Id, Vgs: 32mOhm @ 8A, 4.5V
Power Dissipation (Max): 2.8W (Ta)
Vgs(th) (Max) @ Id: 900mV @ 250µA
Supplier Device Package: 6-DFN (2x2)
Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4.5V
Vgs (Max): ±8V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 18 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 1025 pF @ 10 V
Produkt ist nicht verfügbar
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AON2405Alpha & Omega Semiconductor Inc.Description: MOSFET P-CH 20V 8A 6DFN
Packaging: Tape & Reel (TR)
Package / Case: 6-UDFN Exposed Pad
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 8A (Ta)
Rds On (Max) @ Id, Vgs: 32mOhm @ 8A, 4.5V
Power Dissipation (Max): 2.8W (Ta)
Vgs(th) (Max) @ Id: 900mV @ 250µA
Supplier Device Package: 6-DFN (2x2)
Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4.5V
Vgs (Max): ±8V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 18 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 1025 pF @ 10 V
Produkt ist nicht verfügbar
 Mindestbestellmenge: 3000 Stücke
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AON2406Alpha & Omega Semiconductor Inc.Description: MOSFET N-CH 20V 8A 6DFN
Packaging: Cut Tape (CT)
Package / Case: 6-UDFN Exposed Pad
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 8A (Ta)
Rds On (Max) @ Id, Vgs: 12.5mOhm @ 8A, 4.5V
Power Dissipation (Max): 2.8W (Ta)
Vgs(th) (Max) @ Id: 1V @ 250µA
Supplier Device Package: 6-DFN (2x2)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4.5V
Vgs (Max): ±8V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 18 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 1140 pF @ 10 V
auf Bestellung 20498 Stücke:
Lieferzeit 10-14 Tag (e)
12+1.87 EUR
18+1.17 EUR
100+0.76 EUR
500+0.58 EUR
1000+0.52 EUR
Mindestbestellmenge: 12 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
AON2406AOSMOSFET N-CH 20V 8A 6DFN Транзистори
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
AON2406Alpha & Omega Semiconductor Inc.Description: MOSFET N-CH 20V 8A 6DFN
Packaging: Tape & Reel (TR)
Package / Case: 6-UDFN Exposed Pad
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 8A (Ta)
Rds On (Max) @ Id, Vgs: 12.5mOhm @ 8A, 4.5V
Power Dissipation (Max): 2.8W (Ta)
Vgs(th) (Max) @ Id: 1V @ 250µA
Supplier Device Package: 6-DFN (2x2)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4.5V
Vgs (Max): ±8V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 18 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 1140 pF @ 10 V
auf Bestellung 18000 Stücke:
Lieferzeit 10-14 Tag (e)
3000+0.45 EUR
6000+0.42 EUR
9000+0.4 EUR
15000+0.38 EUR
Mindestbestellmenge: 3000 Stücke
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AON2406Alpha & Omega SemiconductorTrans MOSFET N-CH 20V 8A 6-Pin DFN-B EP T/R
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AON2407Alpha & Omega Semiconductor Inc.Description: MOSFET P-CH 30V 6.3A 6DFN
Packaging: Tape & Reel (TR)
Package / Case: 6-UDFN Exposed Pad
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 6.3A (Ta)
Rds On (Max) @ Id, Vgs: 37.5mOhm @ 6.3A, 10V
Power Dissipation (Max): 2.8W (Ta)
Vgs(th) (Max) @ Id: 1.5V @ 250µA
Supplier Device Package: 6-DFN (2x2)
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 10V
Vgs (Max): ±12V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 21 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 746 pF @ 15 V
Produkt ist nicht verfügbar
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AON2407Alpha & Omega Semiconductor Inc.Description: MOSFET P-CH 30V 6.3A 6DFN
Packaging: Cut Tape (CT)
Package / Case: 6-UDFN Exposed Pad
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 6.3A (Ta)
Rds On (Max) @ Id, Vgs: 37.5mOhm @ 6.3A, 10V
Power Dissipation (Max): 2.8W (Ta)
Vgs(th) (Max) @ Id: 1.5V @ 250µA
Supplier Device Package: 6-DFN (2x2)
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 10V
Vgs (Max): ±12V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 21 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 746 pF @ 15 V
Produkt ist nicht verfügbar
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AON2408Alpha & Omega SemiconductorTrans MOSFET N-CH 20V 8A 6-Pin DFN-B EP T/R
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AON2408Alpha & Omega Semiconductor Inc.Description: MOSFET N CH 20V 8A DFN 2X2B
Packaging: Tape & Reel (TR)
Package / Case: 6-UDFN Exposed Pad
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 8A (Ta)
Rds On (Max) @ Id, Vgs: 14.5mOhm @ 8A, 4.5V
Power Dissipation (Max): 2.8W (Ta)
Vgs(th) (Max) @ Id: 1.2V @ 250µA
Supplier Device Package: 6-DFN (2x2)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
Vgs (Max): ±12V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 7 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 782 pF @ 10 V
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AON2408Alpha & Omega SemiconductorTrans MOSFET N-CH 20V 8A 6-Pin DFN-B EP T/R
auf Bestellung 3000 Stücke:
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3000+0.7 EUR
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AON2408Alpha & Omega SemiconductorTrans MOSFET N-CH 20V 8A 6-Pin DFN-B EP T/R
auf Bestellung 3000 Stücke:
Lieferzeit 14-21 Tag (e)
3000+0.49 EUR
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AON2408Alpha & Omega Semiconductor Inc.Description: MOSFET N CH 20V 8A DFN 2X2B
Packaging: Cut Tape (CT)
Package / Case: 6-UDFN Exposed Pad
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 8A (Ta)
Rds On (Max) @ Id, Vgs: 14.5mOhm @ 8A, 4.5V
Power Dissipation (Max): 2.8W (Ta)
Vgs(th) (Max) @ Id: 1.2V @ 250µA
Supplier Device Package: 6-DFN (2x2)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
Vgs (Max): ±12V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 7 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 782 pF @ 10 V
auf Bestellung 2840 Stücke:
Lieferzeit 10-14 Tag (e)
13+1.68 EUR
20+1.06 EUR
100+0.69 EUR
500+0.52 EUR
1000+0.48 EUR
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AON2409Alpha & Omega SemiconductorTrans MOSFET P-CH 30V 8A 6-Pin DFN-B EP T/R
Produkt ist nicht verfügbar
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AON2409Alpha & Omega Semiconductor Inc.Description: MOSFET P-CH 30V 8A 6DFN
Packaging: Cut Tape (CT)
Package / Case: 6-UDFN Exposed Pad
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 8A (Ta)
Rds On (Max) @ Id, Vgs: 32mOhm @ 8A, 10V
Power Dissipation (Max): 2.8W (Ta)
Vgs(th) (Max) @ Id: 2.3V @ 250µA
Supplier Device Package: 6-DFN (2x2)
Part Status: Not For New Designs
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 14.5 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 530 pF @ 15 V
auf Bestellung 628 Stücke:
Lieferzeit 10-14 Tag (e)
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20+1.07 EUR
100+0.74 EUR
500+0.58 EUR
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AON2409ALPHA & OMEGA SEMICONDUCTORCategory: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -30V; -6.3A; 1.8W; DFN6
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -30V
Drain current: -6.3A
Power dissipation: 1.8W
Case: DFN6
Gate-source voltage: ±20V
On-state resistance: 32mΩ
Mounting: SMD
Gate charge: 6nC
Kind of channel: enhancement
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AON2409
Produktcode: 190583
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AON2409Alpha & Omega Semiconductor Inc.Description: MOSFET P-CH 30V 8A 6DFN
Packaging: Tape & Reel (TR)
Package / Case: 6-UDFN Exposed Pad
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 8A (Ta)
Rds On (Max) @ Id, Vgs: 32mOhm @ 8A, 10V
Power Dissipation (Max): 2.8W (Ta)
Vgs(th) (Max) @ Id: 2.3V @ 250µA
Supplier Device Package: 6-DFN (2x2)
Part Status: Not For New Designs
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 14.5 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 530 pF @ 15 V
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AON2410Alpha & Omega Semiconductor Inc.Description: MOSFET N CH 30V 8A DFN 2X2B
Packaging: Tape & Reel (TR)
Package / Case: 6-UDFN Exposed Pad
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 8A (Ta)
Rds On (Max) @ Id, Vgs: 21mOhm @ 8A, 4.5V
Power Dissipation (Max): 2.8W (Ta)
Vgs(th) (Max) @ Id: 1.5V @ 250µA
Supplier Device Package: 6-DFN (2x2)
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
Vgs (Max): ±12V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 12 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 813 pF @ 15 V
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AON2411Alpha & Omega Semiconductor Inc.Description: MOSFET P-CH 12V 20A 8DFN
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AON2411Alpha & Omega Semiconductor Inc.Description: MOSFET P-CH 12V 20A 8DFN
Produkt ist nicht verfügbar
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AON2420Alpha & Omega Semiconductor Inc.Description: MOSFET N-CH 30V 8A 6DFN
Packaging: Tape & Reel (TR)
Package / Case: 6-UDFN Exposed Pad
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 8A (Ta)
Rds On (Max) @ Id, Vgs: 11.7mOhm @ 8A, 10V
Power Dissipation (Max): 2.8W (Ta)
Vgs(th) (Max) @ Id: 2.2V @ 250µA
Supplier Device Package: 6-DFN (2x2)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 12 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 552 pF @ 15 V
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AON2420Alpha & Omega Semiconductor Inc.Description: MOSFET N-CH 30V 8A 6DFN
Packaging: Cut Tape (CT)
Package / Case: 6-UDFN Exposed Pad
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 8A (Ta)
Rds On (Max) @ Id, Vgs: 11.7mOhm @ 8A, 10V
Power Dissipation (Max): 2.8W (Ta)
Vgs(th) (Max) @ Id: 2.2V @ 250µA
Supplier Device Package: 6-DFN (2x2)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 12 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 552 pF @ 15 V
Produkt ist nicht verfügbar
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AON2701Alpha & Omega Semiconductor Inc.Description: MOSFET P-CH 20V 3A 6DFN
Input Capacitance (Ciss) (Max) @ Vds: 700 pF @ 10 V
Gate Charge (Qg) (Max) @ Vgs: 6.5 nC @ 4.5 V
Drain to Source Voltage (Vdss): 20 V
Vgs (Max): ±8V
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
Supplier Device Package: 6-DFN (2x2)
Vgs(th) (Max) @ Id: 1V @ 250µA
Power Dissipation (Max): 1.5W (Ta)
FET Feature: Schottky Diode (Isolated)
Rds On (Max) @ Id, Vgs: 120mOhm @ 3A, 4.5V
Current - Continuous Drain (Id) @ 25°C: 3A (Ta)
FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 6-WDFN Exposed Pad
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar
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AON2701L#AAlpha & Omega Semiconductor Inc.Description: MOSFET P-CH 20V 3A 6DFN
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AON2705Alpha & Omega Semiconductor Inc.Description: MOSFET P-CH 30V 3A 6DFN
Input Capacitance (Ciss) (Max) @ Vds: 180 pF @ 15 V
Gate Charge (Qg) (Max) @ Vgs: 6 nC @ 10 V
Drain to Source Voltage (Vdss): 30 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Supplier Device Package: 6-DFN (2x2)
Vgs(th) (Max) @ Id: 2.3V @ 250µA
Power Dissipation (Max): 1.5W (Ta)
FET Feature: Schottky Diode (Body)
Rds On (Max) @ Id, Vgs: 108mOhm @ 3A, 10V
Current - Continuous Drain (Id) @ 25°C: 3A (Ta)
FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 6-WDFN Exposed Pad
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar
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AON2707Alpha & Omega Semiconductor Inc.Description: MOSFET P-CH 30V 4A 6DFN
Input Capacitance (Ciss) (Max) @ Vds: 305 pF @ 15 V
Gate Charge (Qg) (Max) @ Vgs: 12 nC @ 10 V
Drain to Source Voltage (Vdss): 30 V
Vgs (Max): ±12V
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 10V
Supplier Device Package: 6-DFN (2x2)
Vgs(th) (Max) @ Id: 1.5V @ 250µA
Power Dissipation (Max): 2.8W (Ta)
FET Feature: Schottky Diode (Isolated)
Rds On (Max) @ Id, Vgs: 117mOhm @ 4A, 10V
Current - Continuous Drain (Id) @ 25°C: 4A (Ta)
FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 6-WDFN Exposed Pad
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar
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AON2800Alpha & Omega Semiconductor Inc.Description: MOSFET 2N-CH 20V 4.5A 6DFN
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AON2801Alpha & Omega Semiconductor Inc.Description: MOSFET 2P-CH 20V 3A DFN2X2-6L
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AON2801LAlpha & Omega Semiconductor Inc.Description: MOSFET P-CH DUAL DFN
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AON2801L#AAlpha & Omega Semiconductor Inc.Description: MOSFET 2P-CH 20V 3A DFN2X2-6L
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AON2802Alpha & Omega Semiconductor Inc.Description: MOSFET 2N-CH 30V 2A 6DFN
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AON2803Alpha & Omega Semiconductor Inc.Description: MOSFET 2P-CH 20V 3.8A 6DFN
Supplier Device Package: 6-DFN (2x2)
Vgs(th) (Max) @ Id: 1V @ 250µA
FET Feature: Logic Level Gate
Gate Charge (Qg) (Max) @ Vgs: 12nC @ 4.5V
Rds On (Max) @ Id, Vgs: 70mOhm @ 3.8A, 4.5V
Input Capacitance (Ciss) (Max) @ Vds: 560pF @ 10V
Current - Continuous Drain (Id) @ 25°C: 3.8A
Drain to Source Voltage (Vdss): 20V
Power - Max: 1.5W
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Configuration: 2 P-Channel (Dual)
Mounting Type: Surface Mount
Package / Case: 6-WDFN Exposed Pad
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar
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AON2803Alpha & Omega SemiconductorTrans MOSFET P-CH 20V 3.8A 6-Pin DFN EP T/R
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AON2803GAlpha & Omega Semiconductor Inc.Description: MOSFET P-CH DUAL
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar
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AON2809Alpha & Omega Semiconductor Inc.Description: MOSFET 2P-CH 12V 2A 6DFN
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AON2810Alpha & Omega SemiconductorTrans MOSFET N-CH 30V 2A 6-Pin DFN-A EP T/R
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AON2810Alpha & Omega Semiconductor Inc.Description: MOSFET 2N-CH 30V 2A 6DFN
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AON2810Alpha & Omega Semiconductor Inc.Description: MOSFET 2N-CH 30V 2A 6DFN
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AON2812Alpha & Omega Semiconductor Inc.Description: MOSFET 2N-CH 30V 4.5A 6DFN
Supplier Device Package: 6-DFN (2x2)
Vgs(th) (Max) @ Id: 1.4V @ 250µA
FET Feature: Logic Level Gate
Gate Charge (Qg) (Max) @ Vgs: 10nC @ 10V
Rds On (Max) @ Id, Vgs: 37mOhm @ 2A, 10V
Input Capacitance (Ciss) (Max) @ Vds: 235pF @ 15V
Current - Continuous Drain (Id) @ 25°C: 4.5A
Drain to Source Voltage (Vdss): 30V
Power - Max: 2.5W
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Configuration: 2 N-Channel (Dual)
Mounting Type: Surface Mount
Package / Case: 6-UDFN Exposed Pad
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar
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AON2812Alpha & Omega SemiconductorTrans MOSFET N-CH 30V 4.5A 6-Pin DFN-A EP T/R
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AON2880Alpha & Omega Semiconductor Inc.Description: MOSFET 2N-CH 20V 7A DFN2X2
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AON3400TIDECDescription: CONFIG SWITCH BODY
Packaging: Bulk
Produkt ist nicht verfügbar
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AON3400TIDECPushbutton Switches Mushroom MTD Op TWN
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AON3402ALPHA & OMEGA SEMICONDUCTORCategory: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 20V; 9.6A; 3W; DFN8
Mounting: SMD
Power dissipation: 3W
Gate charge: 17.9nC
Polarisation: unipolar
Drain current: 9.6A
Kind of channel: enhancement
Drain-source voltage: 20V
Type of transistor: N-MOSFET
Gate-source voltage: ±12V
Case: DFN8
On-state resistance: 13mΩ
auf Bestellung 2515 Stücke:
Lieferzeit 14-21 Tag (e)
162+0.52 EUR
175+0.49 EUR
181+0.48 EUR
250+0.44 EUR
500+0.43 EUR
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AON3402Alpha & Omega Semiconductor Inc.Description: MOSFET N-CH 20V 12.6A 8DFN
Input Capacitance (Ciss) (Max) @ Vds: 1810 pF @ 10 V
Gate Charge (Qg) (Max) @ Vgs: 17.9 nC @ 4.5 V
Drain to Source Voltage (Vdss): 20 V
Vgs (Max): ±12V
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
Supplier Device Package: 8-DFN (3x3)
Vgs(th) (Max) @ Id: 1V @ 250µA
Power Dissipation (Max): 3.1W (Ta)
Rds On (Max) @ Id, Vgs: 13mOhm @ 12A, 4.5V
Current - Continuous Drain (Id) @ 25°C: 12.6A (Ta)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-SMD, Flat Lead
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar
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AON3414Alpha & Omega Semiconductor Inc.Description: MOSFET N-CH 30V 10.5A 8DFN
Input Capacitance (Ciss) (Max) @ Vds: 690 pF @ 15 V
Gate Charge (Qg) (Max) @ Vgs: 25 nC @ 10 V
Drain to Source Voltage (Vdss): 30 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Supplier Device Package: 8-DFN (3x3)
Vgs(th) (Max) @ Id: 2.4V @ 250µA
Power Dissipation (Max): 3.1W (Ta)
Rds On (Max) @ Id, Vgs: 17mOhm @ 9A, 10V
Current - Continuous Drain (Id) @ 25°C: 10.5A (Ta)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-SMD, Flat Leads
Packaging: Tape & Reel (TR)
auf Bestellung 6000 Stücke:
Lieferzeit 10-14 Tag (e)
3000+0.24 EUR
6000+0.21 EUR
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AON3414Alpha & Omega SemiconductorTrans MOSFET N-CH 30V 10.5A 8-Pin DFN T/R
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AON3414Alpha & Omega Semiconductor Inc.Description: MOSFET N-CH 30V 10.5A 8DFN
Input Capacitance (Ciss) (Max) @ Vds: 690 pF @ 15 V
Gate Charge (Qg) (Max) @ Vgs: 25 nC @ 10 V
Drain to Source Voltage (Vdss): 30 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Supplier Device Package: 8-DFN (3x3)
Vgs(th) (Max) @ Id: 2.4V @ 250µA
Power Dissipation (Max): 3.1W (Ta)
Rds On (Max) @ Id, Vgs: 17mOhm @ 9A, 10V
Current - Continuous Drain (Id) @ 25°C: 10.5A (Ta)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-SMD, Flat Leads
Packaging: Cut Tape (CT)
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33+0.64 EUR
100+0.42 EUR
500+0.31 EUR
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AON3414ALPHA & OMEGA SEMICONDUCTORCategory: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 8A; 2W; DFN3x3; ESD
Power dissipation: 2W
Case: DFN3x3
Mounting: SMD
Kind of channel: enhancement
Version: ESD
Type of transistor: N-MOSFET
Polarisation: unipolar
Gate charge: 15nC
On-state resistance: 17mΩ
Drain current: 8A
Gate-source voltage: ±20V
Drain-source voltage: 30V
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348+0.25 EUR
376+0.23 EUR
394+0.21 EUR
500+0.19 EUR
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AON3419Alpha & Omega Semiconductor Inc.Description: MOSFET P-CH 30V 10A DFN
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AON3611Alpha & Omega SemiconductorTrans MOSFET N/P-CH 30V 5A/6A 8-Pin DFN
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AON3611ALPHA & OMEGA SEMICONDUCTORCategory: Multi channel transistors
Description: Transistor: N/P-MOSFET; unipolar; complementary pair; 30/-30V
Semiconductor structure: common drain
Kind of transistor: complementary pair
Case: DFN8
Kind of channel: enhancement
Mounting: SMD
Polarisation: unipolar
Type of transistor: N/P-MOSFET
Gate charge: 2/4.6nC
On-state resistance: 50/38mΩ
Power dissipation: 1.3/1.6W
Drain current: 3.8/-4.7A
Gate-source voltage: ±20V
Drain-source voltage: 30/-30V
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506+0.17 EUR
544+0.15 EUR
633+0.13 EUR
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AON3611Alpha & Omega Semiconductor Inc.Description: MOSFET N/P-CH 30V 5A/6A 8DFN
Packaging: Tape & Reel (TR)
Package / Case: 8-SMD, Flat Leads
Mounting Type: Surface Mount
Configuration: N and P-Channel, Common Drain
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 2.1W, 2.5W
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 5A, 6A
Input Capacitance (Ciss) (Max) @ Vds: 170pF @ 15V
Rds On (Max) @ Id, Vgs: 50mOhm @ 5A, 10V
Gate Charge (Qg) (Max) @ Vgs: 10nC @ 10V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: 8-DFN (3x3)
Part Status: Active
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AON3611Alpha & Omega Semiconductor Inc.Description: MOSFET N/P-CH 30V 5A/6A 8DFN
Packaging: Cut Tape (CT)
Package / Case: 8-SMD, Flat Leads
Mounting Type: Surface Mount
Configuration: N and P-Channel, Common Drain
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 2.1W, 2.5W
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 5A, 6A
Input Capacitance (Ciss) (Max) @ Vds: 170pF @ 15V
Rds On (Max) @ Id, Vgs: 50mOhm @ 5A, 10V
Gate Charge (Qg) (Max) @ Vgs: 10nC @ 10V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: 8-DFN (3x3)
Part Status: Active
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AON3613Alpha & Omega Semiconductor Inc.Description: MOSFET N/P-CH 30V 4.5A 8DFN
Packaging: Cut Tape (CT)
Package / Case: 8-SMD, Flat Leads
Mounting Type: Surface Mount
Configuration: N and P-Channel, Common Drain
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 2.1W
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 4.5A
Input Capacitance (Ciss) (Max) @ Vds: 245pF @ 15V
Rds On (Max) @ Id, Vgs: 52mOhm @ 4.5A, 10V
Gate Charge (Qg) (Max) @ Vgs: 10nC @ 10V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 1.5V @ 250µA
Supplier Device Package: 8-DFN (3x3)
Produkt ist nicht verfügbar
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AON3613Alpha & Omega Semiconductor Inc.Description: MOSFET N/P-CH 30V 4.5A 8DFN
Packaging: Tape & Reel (TR)
Package / Case: 8-SMD, Flat Leads
Mounting Type: Surface Mount
Configuration: N and P-Channel, Common Drain
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 2.1W
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 4.5A
Input Capacitance (Ciss) (Max) @ Vds: 245pF @ 15V
Rds On (Max) @ Id, Vgs: 52mOhm @ 4.5A, 10V
Gate Charge (Qg) (Max) @ Vgs: 10nC @ 10V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 1.5V @ 250µA
Supplier Device Package: 8-DFN (3x3)
Produkt ist nicht verfügbar
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AON3806Alpha & Omega Semiconductor Inc.Description: MOSFET 2N-CH 20V 6A 8DFN
Supplier Device Package: 8-DFN (3x3)
Vgs(th) (Max) @ Id: 1.1V @ 250µA
FET Feature: Logic Level Gate
Gate Charge (Qg) (Max) @ Vgs: 9nC @ 4.5V
Rds On (Max) @ Id, Vgs: 26mOhm @ 6.8A, 4.5V
Input Capacitance (Ciss) (Max) @ Vds: 500pF @ 10V
Current - Continuous Drain (Id) @ 25°C: 6A
Drain to Source Voltage (Vdss): 20V
Power - Max: 2.5W
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Configuration: 2 N-Channel (Dual) Common Drain
Mounting Type: Surface Mount
Package / Case: 8-SMD, Flat Leads
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar
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AON3810Alpha & Omega Semiconductor Inc.Description: MOSFET 2N-CH 20V 8DFN
Configuration: 2 N-Channel (Dual) Common Drain
Mounting Type: Surface Mount
Package / Case: 8-SMD, Flat Leads
Packaging: Tape & Reel (TR)
Supplier Device Package: 8-DFN (3x3)
Vgs(th) (Max) @ Id: 1V @ 250µA
FET Feature: Logic Level Gate
Gate Charge (Qg) (Max) @ Vgs: 5.2nC @ 4.5V
Rds On (Max) @ Id, Vgs: 24mOhm @ 7A, 10V
Input Capacitance (Ciss) (Max) @ Vds: 280pF @ 10V
Drain to Source Voltage (Vdss): 20V
Power - Max: 2.5W
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Produkt ist nicht verfügbar
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AON3814Alpha & Omega SemiconductorTrans MOSFET N-CH 20V 6A 8-Pin DFN
Produkt ist nicht verfügbar
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