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PJC138K-AU_R1_000A1PanJit SemiconductorPJC138K-AU-R1 SMD N channel transistors
auf Bestellung 2510 Stücke:
Lieferzeit 7-14 Tag (e)
197+0.36 EUR
1194+0.06 EUR
1260+0.06 EUR
Mindestbestellmenge: 197
Im Einkaufswagen  Stück im Wert von  UAH
PJC138K-AU_R1_000A1Panjit International Inc.Description: SOT-323, MOSFET
Packaging: Tape & Reel (TR)
Package / Case: SC-70, SOT-323
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 360mA (Ta)
Rds On (Max) @ Id, Vgs: 1.6Ohm @ 500mA, 10V
Power Dissipation (Max): 236mW (Ta)
Vgs(th) (Max) @ Id: 1.5V @ 250µA
Supplier Device Package: SOT-323
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 50 V
Gate Charge (Qg) (Max) @ Vgs: 1 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 50 pF @ 25 V
auf Bestellung 3000 Stücke:
Lieferzeit 10-14 Tag (e)
3000+0.11 EUR
Mindestbestellmenge: 3000
Im Einkaufswagen  Stück im Wert von  UAH
PJC138K-AU_R1_000A1Panjit International Inc.Description: SOT-323, MOSFET
Packaging: Cut Tape (CT)
Package / Case: SC-70, SOT-323
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 360mA (Ta)
Rds On (Max) @ Id, Vgs: 1.6Ohm @ 500mA, 10V
Power Dissipation (Max): 236mW (Ta)
Vgs(th) (Max) @ Id: 1.5V @ 250µA
Supplier Device Package: SOT-323
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 50 V
Gate Charge (Qg) (Max) @ Vgs: 1 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 50 pF @ 25 V
auf Bestellung 3486 Stücke:
Lieferzeit 10-14 Tag (e)
30+0.60 EUR
40+0.45 EUR
100+0.25 EUR
500+0.17 EUR
1000+0.13 EUR
Mindestbestellmenge: 30
Im Einkaufswagen  Stück im Wert von  UAH
PJC138K-AU_R1_000A1PanjitMOSFETs 50V N-Channel Enhancement Mode MOSFETESD Protected
Produkt ist nicht verfügbar
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PJC138K-R1-00001PanjitMOSFETs SOT323 N CHAN 50V
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
PJC138K_R1_00001Panjit International Inc.Description: SOT-323, MOSFET
Packaging: Cut Tape (CT)
Package / Case: SC-70, SOT-323
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 360mA (Ta)
Rds On (Max) @ Id, Vgs: 1.6Ohm @ 500mA, 10V
Power Dissipation (Max): 236mW (Ta)
Vgs(th) (Max) @ Id: 1.5V @ 250µA
Supplier Device Package: SOT-323
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 50 V
Gate Charge (Qg) (Max) @ Vgs: 1 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 50 pF @ 25 V
auf Bestellung 2896 Stücke:
Lieferzeit 10-14 Tag (e)
84+0.21 EUR
115+0.15 EUR
224+0.08 EUR
Mindestbestellmenge: 84
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PJC138K_R1_00001PanjitMOSFETs 50V N-Channel Enhancement Mode MOSFETESD Protected
auf Bestellung 134608 Stücke:
Lieferzeit 10-14 Tag (e)
13+0.22 EUR
19+0.15 EUR
100+0.08 EUR
1000+0.07 EUR
3000+0.06 EUR
9000+0.05 EUR
24000+0.05 EUR
Mindestbestellmenge: 13
Im Einkaufswagen  Stück im Wert von  UAH
PJC138K_R1_00001Panjit International Inc.Description: SOT-323, MOSFET
Packaging: Tape & Reel (TR)
Package / Case: SC-70, SOT-323
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 360mA (Ta)
Rds On (Max) @ Id, Vgs: 1.6Ohm @ 500mA, 10V
Power Dissipation (Max): 236mW (Ta)
Vgs(th) (Max) @ Id: 1.5V @ 250µA
Supplier Device Package: SOT-323
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 50 V
Gate Charge (Qg) (Max) @ Vgs: 1 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 50 pF @ 25 V
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
PJC138K_R2_00001PanjitMOSFETs 50V N-Channel Enhancement Mode MOSFET-ESD Protected
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
PJC138L-R1-00001PanjitMOSFETs SOT323 N CHAN 60V
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
PJC138L_R1_00001Panjit International Inc.Description: 60V P-CHANNEL ENHANCEMENT MODE M
Packaging: Cut Tape (CT)
Package / Case: SC-70, SOT-323
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 200mA (Ta)
Rds On (Max) @ Id, Vgs: 4.2Ohm @ 200mA, 10V
Power Dissipation (Max): 350mW (Ta)
Vgs(th) (Max) @ Id: 1.5V @ 250µA
Supplier Device Package: SOT-323
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 0.7 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 15 pF @ 15 V
auf Bestellung 2556 Stücke:
Lieferzeit 10-14 Tag (e)
39+0.46 EUR
58+0.30 EUR
100+0.20 EUR
500+0.16 EUR
1000+0.14 EUR
Mindestbestellmenge: 39
Im Einkaufswagen  Stück im Wert von  UAH
PJC138L_R1_00001Panjit International Inc.Description: 60V P-CHANNEL ENHANCEMENT MODE M
Packaging: Tape & Reel (TR)
Package / Case: SC-70, SOT-323
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 200mA (Ta)
Rds On (Max) @ Id, Vgs: 4.2Ohm @ 200mA, 10V
Power Dissipation (Max): 350mW (Ta)
Vgs(th) (Max) @ Id: 1.5V @ 250µA
Supplier Device Package: SOT-323
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 0.7 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 15 pF @ 15 V
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
PJC138L_R1_00001PanjitMOSFETs 60V P-Channel Enhancement Mode MOSFET
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
PJC138L_R2_00001PanjitMOSFETs 60V P-Channel Enhancement Mode MOSFET
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
PJC16F73-1/SP
auf Bestellung 26 Stücke:
Lieferzeit 21-28 Tag (e)
Im Einkaufswagen  Stück im Wert von  UAH
PJC7002H_R1_00001PanjitMOSFETs 60V P-Channel Enhancement Mode MOSFET
auf Bestellung 1990 Stücke:
Lieferzeit 185-189 Tag (e)
4+0.75 EUR
10+0.57 EUR
100+0.32 EUR
1000+0.16 EUR
3000+0.14 EUR
9000+0.11 EUR
Mindestbestellmenge: 4
Im Einkaufswagen  Stück im Wert von  UAH
PJC7002H_R1_00001Panjit International Inc.Description: 60V N-CHANNEL ENHANCEMENT MODE M
Packaging: Cut Tape (CT)
Package / Case: SC-70, SOT-323
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 250mA (Ta)
Rds On (Max) @ Id, Vgs: 5Ohm @ 300mA, 10V
Power Dissipation (Max): 350mW (Ta)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: SOT-323
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 1.3 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 22 pF @ 25 V
auf Bestellung 575 Stücke:
Lieferzeit 10-14 Tag (e)
46+0.39 EUR
51+0.35 EUR
100+0.19 EUR
500+0.12 EUR
Mindestbestellmenge: 46
Im Einkaufswagen  Stück im Wert von  UAH
PJC7002H_R1_00001Panjit International Inc.Description: 60V N-CHANNEL ENHANCEMENT MODE M
Packaging: Tape & Reel (TR)
Package / Case: SC-70, SOT-323
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 250mA (Ta)
Rds On (Max) @ Id, Vgs: 5Ohm @ 300mA, 10V
Power Dissipation (Max): 350mW (Ta)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: SOT-323
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 1.3 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 22 pF @ 25 V
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
PJC7201SQUARE D BY SCHNEIDER ELECTRICDescription: SQUARE D BY SCHNEIDER ELECTRIC - PJC7201 - ELECTRIC JOINT COMPOUND, CIRCUIT BREAKER
tariffCode: 34031980
productTraceability: No
Behältertyp: Tube
rohsCompliant: NA
Gewicht: 2oz
euEccn: NLR
Volumen: 59.15ml
hazardous: false
rohsPhthalatesCompliant: NA
directShipCharge: 25
usEccn: EAR99
Produktpalette: -
SVHC: No SVHC (17-Dec-2014)
auf Bestellung 9 Stücke:
Lieferzeit 14-21 Tag (e)
Im Einkaufswagen  Stück im Wert von  UAH
PJC7400_R1_00001PanJit SemiconductorCategory: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 1.9A; Idm: 7.6A; 350mW; SOT323
Case: SOT323
Mounting: SMD
Kind of package: reel; tape
Drain current: 1.9A
On-state resistance: 0.11Ω
Type of transistor: N-MOSFET
Power dissipation: 0.35W
Polarisation: unipolar
Gate charge: 4.8nC
Kind of channel: enhancement
Gate-source voltage: ±12V
Pulsed drain current: 7.6A
Drain-source voltage: 30V
auf Bestellung 5940 Stücke:
Lieferzeit 14-21 Tag (e)
173+0.41 EUR
225+0.32 EUR
319+0.22 EUR
736+0.10 EUR
782+0.09 EUR
Mindestbestellmenge: 173
Im Einkaufswagen  Stück im Wert von  UAH
PJC7400_R1_00001Panjit International Inc.Description: SOT-323, MOSFET
Packaging: Tape & Reel (TR)
Package / Case: SC-70, SOT-323
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 1.9A (Ta)
Rds On (Max) @ Id, Vgs: 70mOhm @ 1.9A, 10V
Power Dissipation (Max): 350mW (Ta)
Vgs(th) (Max) @ Id: 1.2V @ 250µA
Supplier Device Package: SOT-323
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 10V
Vgs (Max): ±12V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 4.8 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 447 pF @ 15 V
auf Bestellung 87000 Stücke:
Lieferzeit 10-14 Tag (e)
3000+0.10 EUR
6000+0.10 EUR
9000+0.06 EUR
15000+0.05 EUR
21000+0.05 EUR
Mindestbestellmenge: 3000
Im Einkaufswagen  Stück im Wert von  UAH
PJC7400_R1_00001PanJit SemiconductorCategory: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 1.9A; Idm: 7.6A; 350mW; SOT323
Case: SOT323
Mounting: SMD
Kind of package: reel; tape
Drain current: 1.9A
On-state resistance: 0.11Ω
Type of transistor: N-MOSFET
Power dissipation: 0.35W
Polarisation: unipolar
Gate charge: 4.8nC
Kind of channel: enhancement
Gate-source voltage: ±12V
Pulsed drain current: 7.6A
Drain-source voltage: 30V
Anzahl je Verpackung: 1 Stücke
auf Bestellung 5940 Stücke:
Lieferzeit 7-14 Tag (e)
173+0.41 EUR
225+0.32 EUR
319+0.22 EUR
736+0.10 EUR
782+0.09 EUR
Mindestbestellmenge: 173
Im Einkaufswagen  Stück im Wert von  UAH
PJC7400_R1_00001Panjit International Inc.Description: SOT-323, MOSFET
Packaging: Cut Tape (CT)
Package / Case: SC-70, SOT-323
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 1.9A (Ta)
Rds On (Max) @ Id, Vgs: 70mOhm @ 1.9A, 10V
Power Dissipation (Max): 350mW (Ta)
Vgs(th) (Max) @ Id: 1.2V @ 250µA
Supplier Device Package: SOT-323
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 10V
Vgs (Max): ±12V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 4.8 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 447 pF @ 15 V
auf Bestellung 91128 Stücke:
Lieferzeit 10-14 Tag (e)
40+0.44 EUR
66+0.27 EUR
140+0.13 EUR
500+0.12 EUR
1000+0.11 EUR
Mindestbestellmenge: 40
Im Einkaufswagen  Stück im Wert von  UAH
PJC7400_R1_00001PanjitMOSFETs 30V N-Channel Enhancement Mode MOSFET
auf Bestellung 35262 Stücke:
Lieferzeit 10-14 Tag (e)
7+0.45 EUR
11+0.28 EUR
100+0.13 EUR
1000+0.11 EUR
Mindestbestellmenge: 7
Im Einkaufswagen  Stück im Wert von  UAH
PJC7400_R2_00001PanjitMOSFET /C00/TR/13"/HF/12K/SOT-323/MOS/SOT/NFET-30TAMN/NF30TA-QI02/PJ///
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
PJC7401_R1_00001Panjit International Inc.Description: SOT-323, MOSFET
Packaging: Tape & Reel (TR)
Package / Case: SC-70, SOT-323
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 1.5A (Ta)
Rds On (Max) @ Id, Vgs: 115mOhm @ 1.5A, 10V
Power Dissipation (Max): 350mW (Ta)
Vgs(th) (Max) @ Id: 1.3V @ 250µA
Supplier Device Package: SOT-323
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 10V
Vgs (Max): ±12V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 11 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 443 pF @ 15 V
auf Bestellung 30000 Stücke:
Lieferzeit 10-14 Tag (e)
3000+0.15 EUR
9000+0.13 EUR
Mindestbestellmenge: 3000
Im Einkaufswagen  Stück im Wert von  UAH
PJC7401_R1_00001PanJit SemiconductorPJC7401-R1 SMD P channel transistors
auf Bestellung 1860 Stücke:
Lieferzeit 7-14 Tag (e)
162+0.44 EUR
705+0.10 EUR
747+0.10 EUR
Mindestbestellmenge: 162
Im Einkaufswagen  Stück im Wert von  UAH
PJC7401_R1_00001Panjit International Inc.Description: SOT-323, MOSFET
Packaging: Cut Tape (CT)
Package / Case: SC-70, SOT-323
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 1.5A (Ta)
Rds On (Max) @ Id, Vgs: 115mOhm @ 1.5A, 10V
Power Dissipation (Max): 350mW (Ta)
Vgs(th) (Max) @ Id: 1.3V @ 250µA
Supplier Device Package: SOT-323
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 10V
Vgs (Max): ±12V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 11 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 443 pF @ 15 V
auf Bestellung 31458 Stücke:
Lieferzeit 10-14 Tag (e)
26+0.69 EUR
37+0.49 EUR
100+0.25 EUR
500+0.22 EUR
1000+0.17 EUR
Mindestbestellmenge: 26
Im Einkaufswagen  Stück im Wert von  UAH
PJC7401_R1_00001PanjitMOSFET /C01/TR/7"/HF/3K/SOT-323/MOS/SOT/NFET-30TAMP/NF30TA-QI01/PJ///
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
PJC7401_R2_00001PanjitMOSFETs 30V P-Channel Enhancement Mode MOSFET
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
PJC7403_R1_00001Panjit International Inc.Description: 20V P-CHANNEL ENHANCEMENT MODE M
Packaging: Cut Tape (CT)
Package / Case: SC-70, SOT-323
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 700mA (Ta)
Rds On (Max) @ Id, Vgs: 325mOhm @ 700mA, 4.5V
Power Dissipation (Max): 350mW (Ta)
Vgs(th) (Max) @ Id: 1V @ 250µA
Supplier Device Package: SOT-323
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
Vgs (Max): ±8V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 2.2 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 165 pF @ 10 V
auf Bestellung 1232 Stücke:
Lieferzeit 10-14 Tag (e)
34+0.53 EUR
50+0.36 EUR
100+0.24 EUR
500+0.19 EUR
1000+0.17 EUR
Mindestbestellmenge: 34
Im Einkaufswagen  Stück im Wert von  UAH
PJC7403_R1_00001PanjitMOSFET /C03/TR/7"/HF/3K/SOT-323/MOS/SOT/NFET-20TAMP/NF20TA-QI01/PJ///
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
PJC7403_R1_00001Panjit International Inc.Description: 20V P-CHANNEL ENHANCEMENT MODE M
Packaging: Tape & Reel (TR)
Package / Case: SC-70, SOT-323
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 700mA (Ta)
Rds On (Max) @ Id, Vgs: 325mOhm @ 700mA, 4.5V
Power Dissipation (Max): 350mW (Ta)
Vgs(th) (Max) @ Id: 1V @ 250µA
Supplier Device Package: SOT-323
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
Vgs (Max): ±8V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 2.2 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 165 pF @ 10 V
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
PJC7403_R2_00001PanjitMOSFET /C03/TR/13"/HF/12K/SOT-323/MOS/SOT/NFET-20TAMP/NF20TA-QI01/PJ///
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
PJC7404_R1_00001Panjit International Inc.Description: SOT-323, MOSFET
Packaging: Cut Tape (CT)
Package / Case: SC-70, SOT-323
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 1A (Ta)
Rds On (Max) @ Id, Vgs: 150mOhm @ 1A, 4.5V
Power Dissipation (Max): 350mW (Ta)
Vgs(th) (Max) @ Id: 1V @ 250µA
Supplier Device Package: SOT-323
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
Vgs (Max): ±8V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 1.6 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 92 pF @ 10 V
auf Bestellung 26442 Stücke:
Lieferzeit 10-14 Tag (e)
25+0.72 EUR
35+0.51 EUR
100+0.26 EUR
500+0.23 EUR
1000+0.18 EUR
Mindestbestellmenge: 25
Im Einkaufswagen  Stück im Wert von  UAH
PJC7404_R1_00001PanjitMOSFETs 20V P-Channel Enhancement Mode MOSFETESD Protected
auf Bestellung 5672 Stücke:
Lieferzeit 10-14 Tag (e)
6+0.54 EUR
10+0.37 EUR
100+0.19 EUR
1000+0.17 EUR
3000+0.14 EUR
9000+0.12 EUR
24000+0.11 EUR
Mindestbestellmenge: 6
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PJC7404_R1_00001PanJit SemiconductorCategory: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 20V; 1A; Idm: 4A; 350mW; SOT323
Case: SOT323
Drain-source voltage: 20V
Drain current: 1A
On-state resistance: 0.4Ω
Type of transistor: N-MOSFET
Power dissipation: 0.35W
Polarisation: unipolar
Kind of package: reel; tape
Gate charge: 1.6nC
Kind of channel: enhancement
Gate-source voltage: ±8V
Pulsed drain current: 4A
Mounting: SMD
Anzahl je Verpackung: 1 Stücke
auf Bestellung 5990 Stücke:
Lieferzeit 7-14 Tag (e)
179+0.40 EUR
266+0.27 EUR
439+0.16 EUR
758+0.09 EUR
807+0.09 EUR
15000+0.09 EUR
21000+0.09 EUR
Mindestbestellmenge: 179
Im Einkaufswagen  Stück im Wert von  UAH
PJC7404_R1_00001Panjit International Inc.Description: SOT-323, MOSFET
Packaging: Tape & Reel (TR)
Package / Case: SC-70, SOT-323
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 1A (Ta)
Rds On (Max) @ Id, Vgs: 150mOhm @ 1A, 4.5V
Power Dissipation (Max): 350mW (Ta)
Vgs(th) (Max) @ Id: 1V @ 250µA
Supplier Device Package: SOT-323
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
Vgs (Max): ±8V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 1.6 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 92 pF @ 10 V
auf Bestellung 18000 Stücke:
Lieferzeit 10-14 Tag (e)
3000+0.16 EUR
6000+0.15 EUR
9000+0.14 EUR
Mindestbestellmenge: 3000
Im Einkaufswagen  Stück im Wert von  UAH
PJC7404_R1_00001PanJit SemiconductorCategory: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 20V; 1A; Idm: 4A; 350mW; SOT323
Case: SOT323
Drain-source voltage: 20V
Drain current: 1A
On-state resistance: 0.4Ω
Type of transistor: N-MOSFET
Power dissipation: 0.35W
Polarisation: unipolar
Kind of package: reel; tape
Gate charge: 1.6nC
Kind of channel: enhancement
Gate-source voltage: ±8V
Pulsed drain current: 4A
Mounting: SMD
auf Bestellung 5990 Stücke:
Lieferzeit 14-21 Tag (e)
179+0.40 EUR
266+0.27 EUR
439+0.16 EUR
758+0.09 EUR
807+0.09 EUR
Mindestbestellmenge: 179
Im Einkaufswagen  Stück im Wert von  UAH
PJC7404_R2_00001PanjitMOSFETs 20V P-Channel Enhancement Mode MOSFET-ESD Protected
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
PJC7407_R1_00001PanJit SemiconductorPJC7407-R1 SMD P channel transistors
auf Bestellung 8474 Stücke:
Lieferzeit 7-14 Tag (e)
136+0.53 EUR
782+0.09 EUR
820+0.09 EUR
Mindestbestellmenge: 136
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PJC7407_R1_00001Panjit International Inc.Description: SOT-323, MOSFET
Packaging: Cut Tape (CT)
Package / Case: SC-70, SOT-323
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 1.3A (Ta)
Rds On (Max) @ Id, Vgs: 125mOhm @ 1.3A, 4.5V
Power Dissipation (Max): 350mW (Ta)
Vgs(th) (Max) @ Id: 1.2V @ 250µA
Supplier Device Package: SOT-323
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
Vgs (Max): ±12V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 5.4 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 416 pF @ 10 V
auf Bestellung 28810 Stücke:
Lieferzeit 10-14 Tag (e)
31+0.58 EUR
46+0.39 EUR
100+0.20 EUR
500+0.19 EUR
1000+0.18 EUR
Mindestbestellmenge: 31
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PJC7407_R1_00001PanjitMOSFETs 20V P-Channel Enhancement Mode MOSFET
auf Bestellung 142801 Stücke:
Lieferzeit 10-14 Tag (e)
6+0.54 EUR
10+0.37 EUR
100+0.19 EUR
1000+0.17 EUR
3000+0.15 EUR
9000+0.12 EUR
24000+0.11 EUR
Mindestbestellmenge: 6
Im Einkaufswagen  Stück im Wert von  UAH
PJC7407_R1_00001Panjit International Inc.Description: SOT-323, MOSFET
Packaging: Tape & Reel (TR)
Package / Case: SC-70, SOT-323
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 1.3A (Ta)
Rds On (Max) @ Id, Vgs: 125mOhm @ 1.3A, 4.5V
Power Dissipation (Max): 350mW (Ta)
Vgs(th) (Max) @ Id: 1.2V @ 250µA
Supplier Device Package: SOT-323
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
Vgs (Max): ±12V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 5.4 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 416 pF @ 10 V
auf Bestellung 24000 Stücke:
Lieferzeit 10-14 Tag (e)
3000+0.16 EUR
6000+0.14 EUR
9000+0.12 EUR
Mindestbestellmenge: 3000
Im Einkaufswagen  Stück im Wert von  UAH
PJC7407_R1_00001PanJitPJC7407_R1_00001
auf Bestellung 3000 Stücke:
Lieferzeit 14-21 Tag (e)
1096+0.13 EUR
Mindestbestellmenge: 1096
Im Einkaufswagen  Stück im Wert von  UAH
PJC7407_R2_00001PanjitMOSFETs 20V P-Channel Enhancement Mode MOSFET
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
PJC7409-R1-00001PanjitMOSFETs SOT323 P CHAN 20V
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
PJC7409-R2-00001PanjitMOSFETs
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
PJC7409_R1_00001Panjit International Inc.Description: 20V P-CHANNEL ENHANCEMENT MODE M
Packaging: Tape & Reel (TR)
Package / Case: SC-70, SOT-323
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 500mA (Ta)
Rds On (Max) @ Id, Vgs: 1.2Ohm @ 500mA, 4.5V
Power Dissipation (Max): 350mW (Ta)
Vgs(th) (Max) @ Id: 1V @ 250µA
Supplier Device Package: SOT-323
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 1.2V, 4.5V
Vgs (Max): ±10V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 1.4 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 38 pF @ 10 V
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
PJC7409_R1_00001Panjit International Inc.Description: 20V P-CHANNEL ENHANCEMENT MODE M
Packaging: Cut Tape (CT)
Package / Case: SC-70, SOT-323
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 500mA (Ta)
Rds On (Max) @ Id, Vgs: 1.2Ohm @ 500mA, 4.5V
Power Dissipation (Max): 350mW (Ta)
Vgs(th) (Max) @ Id: 1V @ 250µA
Supplier Device Package: SOT-323
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 1.2V, 4.5V
Vgs (Max): ±10V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 1.4 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 38 pF @ 10 V
auf Bestellung 5137 Stücke:
Lieferzeit 10-14 Tag (e)
46+0.39 EUR
67+0.26 EUR
100+0.18 EUR
500+0.14 EUR
1000+0.12 EUR
Mindestbestellmenge: 46
Im Einkaufswagen  Stück im Wert von  UAH
PJC7409_R1_00001PanjitMOSFETs 20V P-Channel Enhancement Mode MOSFET
auf Bestellung 2561 Stücke:
Lieferzeit 10-14 Tag (e)
4+0.77 EUR
10+0.58 EUR
100+0.36 EUR
1000+0.19 EUR
3000+0.16 EUR
9000+0.15 EUR
24000+0.14 EUR
Mindestbestellmenge: 4
Im Einkaufswagen  Stück im Wert von  UAH
PJC7409_R2_00001PanjitMOSFETs 20V P-Channel Enhancement Mode MOSFET
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
PJC7410-R1-00001PanjitMOSFETs SOT323 N CHAN 20V
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
PJC7410-R2-00001PanjitMOSFETs
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
PJC7410_R1_00001PanjitMOSFETs 20V N-Channel Enhancement Mode MOSFET
auf Bestellung 2555 Stücke:
Lieferzeit 10-14 Tag (e)
6+0.56 EUR
10+0.38 EUR
100+0.20 EUR
1000+0.17 EUR
3000+0.12 EUR
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PJC7410_R1_00001Panjit International Inc.Description: 20V P-CHANNEL ENHANCEMENT MODE M
Packaging: Tape & Reel (TR)
Package / Case: SC-70, SOT-323
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 500mA (Ta)
Rds On (Max) @ Id, Vgs: 400mOhm @ 500mA, 4.5V
Power Dissipation (Max): 350mW (Ta)
Vgs(th) (Max) @ Id: 900mV @ 250µA
Supplier Device Package: SOT-323
Drive Voltage (Max Rds On, Min Rds On): 1.2V, 4.5V
Vgs (Max): ±10V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 1.4 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 67 pF @ 10 V
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
PJC7410_R1_00001Panjit International Inc.Description: 20V P-CHANNEL ENHANCEMENT MODE M
Packaging: Cut Tape (CT)
Package / Case: SC-70, SOT-323
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 500mA (Ta)
Rds On (Max) @ Id, Vgs: 400mOhm @ 500mA, 4.5V
Power Dissipation (Max): 350mW (Ta)
Vgs(th) (Max) @ Id: 900mV @ 250µA
Supplier Device Package: SOT-323
Drive Voltage (Max Rds On, Min Rds On): 1.2V, 4.5V
Vgs (Max): ±10V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 1.4 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 67 pF @ 10 V
auf Bestellung 2626 Stücke:
Lieferzeit 10-14 Tag (e)
23+0.77 EUR
38+0.47 EUR
100+0.30 EUR
500+0.22 EUR
1000+0.20 EUR
Mindestbestellmenge: 23
Im Einkaufswagen  Stück im Wert von  UAH
PJC7410_R2_00001PanjitMOSFETs 20V N-Channel Enhancement Mode MOSFET
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
PJC7412_R1_00001PanjitMOSFET 30V P-Channel Enhancement Mode MOSFET-ESD Protected
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Im Einkaufswagen  Stück im Wert von  UAH
PJC7412_R2_00001PanjitMOSFET 30V P-Channel Enhancement Mode MOSFET-ESD Protected
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Im Einkaufswagen  Stück im Wert von  UAH
PJC7428_R1_00001Panjit International Inc.Description: SOT-323, MOSFET
Packaging: Cut Tape (CT)
Package / Case: SC-70, SOT-323
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 300mA (Ta)
Rds On (Max) @ Id, Vgs: 1.2Ohm @ 300mA, 4.5V
Power Dissipation (Max): 350mW (Ta)
Vgs(th) (Max) @ Id: 1V @ 250µA
Supplier Device Package: SOT-323
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 1.2V, 4.5V
Vgs (Max): ±10V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 0.9 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 45 pF @ 10 V
auf Bestellung 19884 Stücke:
Lieferzeit 10-14 Tag (e)
25+0.72 EUR
34+0.53 EUR
100+0.30 EUR
500+0.20 EUR
1000+0.15 EUR
Mindestbestellmenge: 25
Im Einkaufswagen  Stück im Wert von  UAH
PJC7428_R1_00001Panjit International Inc.Description: SOT-323, MOSFET
Packaging: Tape & Reel (TR)
Package / Case: SC-70, SOT-323
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 300mA (Ta)
Rds On (Max) @ Id, Vgs: 1.2Ohm @ 300mA, 4.5V
Power Dissipation (Max): 350mW (Ta)
Vgs(th) (Max) @ Id: 1V @ 250µA
Supplier Device Package: SOT-323
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 1.2V, 4.5V
Vgs (Max): ±10V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 0.9 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 45 pF @ 10 V
auf Bestellung 12000 Stücke:
Lieferzeit 10-14 Tag (e)
3000+0.13 EUR
Mindestbestellmenge: 3000
Im Einkaufswagen  Stück im Wert von  UAH
PJC7428_R1_00001PanJit SemiconductorPJC7428-R1 SMD N channel transistors
auf Bestellung 3000 Stücke:
Lieferzeit 7-14 Tag (e)
201+0.36 EUR
906+0.08 EUR
958+0.08 EUR
9000+0.07 EUR
Mindestbestellmenge: 201
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PJC7438-R1-00001PanjitMOSFET SOT-323/MOS/SOT/NFET-50TAMN
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
PJC7438-R2-00001PanjitMOSFET
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
PJC7438_R1_00001Panjit International Inc.Description: SOT-323, MOSFET
Packaging: Cut Tape (CT)
Package / Case: SC-70, SOT-323
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 400mA (Ta)
Rds On (Max) @ Id, Vgs: 1.45Ohm @ 500mA, 10V
Power Dissipation (Max): 350mW (Ta)
Vgs(th) (Max) @ Id: 1V @ 250µA
Supplier Device Package: SOT-323
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 50 V
Gate Charge (Qg) (Max) @ Vgs: 0.95 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 36 pF @ 25 V
auf Bestellung 3358 Stücke:
Lieferzeit 10-14 Tag (e)
24+0.76 EUR
39+0.46 EUR
100+0.29 EUR
500+0.22 EUR
1000+0.19 EUR
Mindestbestellmenge: 24
Im Einkaufswagen  Stück im Wert von  UAH
PJC7438_R1_00001Panjit International Inc.Description: SOT-323, MOSFET
Packaging: Tape & Reel (TR)
Package / Case: SC-70, SOT-323
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 400mA (Ta)
Rds On (Max) @ Id, Vgs: 1.45Ohm @ 500mA, 10V
Power Dissipation (Max): 350mW (Ta)
Vgs(th) (Max) @ Id: 1V @ 250µA
Supplier Device Package: SOT-323
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 50 V
Gate Charge (Qg) (Max) @ Vgs: 0.95 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 36 pF @ 25 V
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
PJC7438_R1_00001PanjitMOSFETs 50V P-Channel Enhancement Mode MOSFET-ESD Protected
auf Bestellung 2528 Stücke:
Lieferzeit 10-14 Tag (e)
4+0.72 EUR
10+0.45 EUR
100+0.22 EUR
1000+0.18 EUR
3000+0.14 EUR
9000+0.12 EUR
24000+0.11 EUR
Mindestbestellmenge: 4
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PJC7438_R2_00001PanjitMOSFET 50V P-Channel Enhancement Mode MOSFET-ESD Protected
Produkt ist nicht verfügbar
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PJC7439-AU_R1_000A1PanJit SemiconductorPJC7439-AU-R1 SMD P channel transistors
auf Bestellung 3000 Stücke:
Lieferzeit 7-14 Tag (e)
197+0.36 EUR
1363+0.05 EUR
1441+0.05 EUR
Mindestbestellmenge: 197
Im Einkaufswagen  Stück im Wert von  UAH
PJC7439-AU_R1_000A1Panjit International Inc.Description: SOT-323, MOSFET
Packaging: Cut Tape (CT)
Package / Case: SC-70, SOT-323
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 250mA (Ta)
Rds On (Max) @ Id, Vgs: 4Ohm @ 500mA, 10V
Power Dissipation (Max): 350mW (Ta)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: SOT-323
Grade: Automotive
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 1.1 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 51 pF @ 25 V
Qualification: AEC-Q101
auf Bestellung 48720 Stücke:
Lieferzeit 10-14 Tag (e)
63+0.28 EUR
89+0.20 EUR
173+0.10 EUR
500+0.10 EUR
1000+0.09 EUR
Mindestbestellmenge: 63
Im Einkaufswagen  Stück im Wert von  UAH
PJC7439-AU_R1_000A1Panjit International Inc.Description: SOT-323, MOSFET
Packaging: Tape & Reel (TR)
Package / Case: SC-70, SOT-323
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 250mA (Ta)
Rds On (Max) @ Id, Vgs: 4Ohm @ 500mA, 10V
Power Dissipation (Max): 350mW (Ta)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: SOT-323
Grade: Automotive
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 1.1 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 51 pF @ 25 V
Qualification: AEC-Q101
auf Bestellung 39000 Stücke:
Lieferzeit 10-14 Tag (e)
3000+0.07 EUR
6000+0.06 EUR
9000+0.06 EUR
Mindestbestellmenge: 3000
Im Einkaufswagen  Stück im Wert von  UAH
PJC7439-AU_R1_000A1PanjitMOSFET 60V P-Channel Enhancement Mode MOSFET
Produkt ist nicht verfügbar
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PJC7439_R1_00001PanjitMOSFETs 60V P-Channel Enhancement Mode MOSFET
auf Bestellung 2725 Stücke:
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4+0.70 EUR
10+0.53 EUR
100+0.33 EUR
1000+0.18 EUR
3000+0.15 EUR
9000+0.13 EUR
24000+0.12 EUR
Mindestbestellmenge: 4
Im Einkaufswagen  Stück im Wert von  UAH
PJC7439_R1_00001Panjit International Inc.Description: 60V P-CHANNEL ENHANCEMENT MODE M
Packaging: Cut Tape (CT)
Package / Case: SC-70, SOT-323
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 250mA (Ta)
Rds On (Max) @ Id, Vgs: 4Ohm @ 500mA, 10V
Power Dissipation (Max): 350mW (Ta)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: SOT-323
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 1.1 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 51 pF @ 25 V
auf Bestellung 5806 Stücke:
Lieferzeit 10-14 Tag (e)
25+0.70 EUR
41+0.44 EUR
100+0.28 EUR
500+0.21 EUR
1000+0.18 EUR
Mindestbestellmenge: 25
Im Einkaufswagen  Stück im Wert von  UAH
PJC7439_R1_00001Panjit International Inc.Description: 60V P-CHANNEL ENHANCEMENT MODE M
Packaging: Tape & Reel (TR)
Package / Case: SC-70, SOT-323
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 250mA (Ta)
Rds On (Max) @ Id, Vgs: 4Ohm @ 500mA, 10V
Power Dissipation (Max): 350mW (Ta)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: SOT-323
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 1.1 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 51 pF @ 25 V
auf Bestellung 3000 Stücke:
Lieferzeit 10-14 Tag (e)
3000+0.16 EUR
Mindestbestellmenge: 3000
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PJC7472B_R1_00001PanjitMOSFET /C2B/TR/7"/HF/3K/SOT-323/MOS/SOT/NFET-60TAMN/NF60TA-QI02/PJ///
Produkt ist nicht verfügbar
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PJC7476_R1_00001Panjit International Inc.Description: 100V N-CHANNEL ENHANCEMENT MODE
Produkt ist nicht verfügbar
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PJC7476_R1_00001PanJit SemiconductorCategory: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 300mA; Idm: 0.8A; 350mW
Type of transistor: N-MOSFET
Polarisation: unipolar
Power dissipation: 0.35W
Case: SOT323
Mounting: SMD
Kind of package: reel; tape
Drain-source voltage: 100V
Drain current: 0.3A
On-state resistance: 9Ω
Gate charge: 1.8nC
Kind of channel: enhancement
Gate-source voltage: ±20V
Pulsed drain current: 0.8A
auf Bestellung 3000 Stücke:
Lieferzeit 14-21 Tag (e)
139+0.51 EUR
188+0.38 EUR
532+0.13 EUR
625+0.11 EUR
3000+0.10 EUR
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PJC7476_R1_00001PanjitMOSFET 100V P-Channel Enhancement Mode MOSFET-ESD Protected
auf Bestellung 2687 Stücke:
Lieferzeit 10-14 Tag (e)
4+0.70 EUR
10+0.53 EUR
100+0.33 EUR
1000+0.18 EUR
3000+0.15 EUR
9000+0.13 EUR
24000+0.12 EUR
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PJC7476_R1_00001Panjit International Inc.Description: 100V N-CHANNEL ENHANCEMENT MODE
auf Bestellung 2975 Stücke:
Lieferzeit 10-14 Tag (e)
24+0.74 EUR
32+0.57 EUR
100+0.35 EUR
500+0.24 EUR
1000+0.19 EUR
Mindestbestellmenge: 24
Im Einkaufswagen  Stück im Wert von  UAH
PJC7476_R1_00001PanJit SemiconductorCategory: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 300mA; Idm: 0.8A; 350mW
Type of transistor: N-MOSFET
Polarisation: unipolar
Power dissipation: 0.35W
Case: SOT323
Mounting: SMD
Kind of package: reel; tape
Drain-source voltage: 100V
Drain current: 0.3A
On-state resistance: 9Ω
Gate charge: 1.8nC
Kind of channel: enhancement
Gate-source voltage: ±20V
Pulsed drain current: 0.8A
Anzahl je Verpackung: 1 Stücke
auf Bestellung 3000 Stücke:
Lieferzeit 7-14 Tag (e)
139+0.51 EUR
188+0.38 EUR
532+0.13 EUR
625+0.11 EUR
3000+0.10 EUR
Mindestbestellmenge: 139
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PJCAPSwitchcraftDC Power Connectors HI-AMPERAGE POWER JA
auf Bestellung 1113 Stücke:
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1+3.06 EUR
10+2.34 EUR
100+2.24 EUR
200+2.06 EUR
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PJCAPSwitchcraft Inc.Description: HI-AMP POWER JACK CAP
Packaging: Bulk
Color: Black
For Use With/Related Products: Power Jack
Accessory Type: Cap (Cover)
auf Bestellung 39461 Stücke:
Lieferzeit 10-14 Tag (e)
6+3.43 EUR
10+2.91 EUR
25+2.72 EUR
50+2.59 EUR
100+2.47 EUR
300+2.29 EUR
500+2.20 EUR
1000+2.10 EUR
2500+2.07 EUR
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auf Bestellung 4000 Stücke:
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