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PJC138K-AU_R1_000A1Panjit International Inc.Description: SOT-323, MOSFET
Packaging: Cut Tape (CT)
Package / Case: SC-70, SOT-323
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 360mA (Ta)
Rds On (Max) @ Id, Vgs: 1.6Ohm @ 500mA, 10V
Power Dissipation (Max): 236mW (Ta)
Vgs(th) (Max) @ Id: 1.5V @ 250µA
Supplier Device Package: SOT-323
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 50 V
Gate Charge (Qg) (Max) @ Vgs: 1 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 50 pF @ 25 V
auf Bestellung 3486 Stücke:
Lieferzeit 21-28 Tag (e)
30+0.88 EUR
40+ 0.66 EUR
100+ 0.37 EUR
500+ 0.25 EUR
1000+ 0.19 EUR
Mindestbestellmenge: 30
PJC138K-AU_R1_000A1PanjitMOSFET 50V N-Channel Enhancement Mode MOSFETESD Protected
Produkt ist nicht verfügbar
PJC138K-AU_R1_000A1PanJit SemiconductorCategory: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 50V; 360mA; Idm: 1.2A; 236mW; SOT323
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 50V
Drain current: 0.36A
Pulsed drain current: 1.2A
Power dissipation: 236mW
Case: SOT323
Gate-source voltage: ±20V
On-state resistance: 4.5Ω
Mounting: SMD
Gate charge: 1nC
Kind of package: reel; tape
Kind of channel: enhanced
Application: automotive industry
Anzahl je Verpackung: 5 Stücke
auf Bestellung 3000 Stücke:
Lieferzeit 7-14 Tag (e)
690+0.1 EUR
850+ 0.084 EUR
945+ 0.076 EUR
1205+ 0.059 EUR
1270+ 0.056 EUR
Mindestbestellmenge: 690
PJC138K-AU_R1_000A1Panjit International Inc.Description: SOT-323, MOSFET
Packaging: Tape & Reel (TR)
Package / Case: SC-70, SOT-323
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 360mA (Ta)
Rds On (Max) @ Id, Vgs: 1.6Ohm @ 500mA, 10V
Power Dissipation (Max): 236mW (Ta)
Vgs(th) (Max) @ Id: 1.5V @ 250µA
Supplier Device Package: SOT-323
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 50 V
Gate Charge (Qg) (Max) @ Vgs: 1 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 50 pF @ 25 V
auf Bestellung 3000 Stücke:
Lieferzeit 21-28 Tag (e)
3000+0.16 EUR
Mindestbestellmenge: 3000
PJC138K-AU_R1_000A1PanJit SemiconductorCategory: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 50V; 360mA; Idm: 1.2A; 236mW; SOT323
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 50V
Drain current: 0.36A
Pulsed drain current: 1.2A
Power dissipation: 236mW
Case: SOT323
Gate-source voltage: ±20V
On-state resistance: 4.5Ω
Mounting: SMD
Gate charge: 1nC
Kind of package: reel; tape
Kind of channel: enhanced
Application: automotive industry
auf Bestellung 3000 Stücke:
Lieferzeit 14-21 Tag (e)
690+0.1 EUR
850+ 0.084 EUR
945+ 0.076 EUR
1205+ 0.059 EUR
1270+ 0.056 EUR
Mindestbestellmenge: 690
PJC138K_R1_00001Panjit International Inc.Description: SOT-323, MOSFET
Packaging: Cut Tape (CT)
Package / Case: SC-70, SOT-323
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 360mA (Ta)
Rds On (Max) @ Id, Vgs: 1.6Ohm @ 500mA, 10V
Power Dissipation (Max): 236mW (Ta)
Vgs(th) (Max) @ Id: 1.5V @ 250µA
Supplier Device Package: SOT-323
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 50 V
Gate Charge (Qg) (Max) @ Vgs: 1 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 50 pF @ 25 V
auf Bestellung 44012 Stücke:
Lieferzeit 21-28 Tag (e)
53+0.49 EUR
73+ 0.36 EUR
151+ 0.17 EUR
500+ 0.14 EUR
1000+ 0.1 EUR
Mindestbestellmenge: 53
PJC138K_R1_00001Panjit International Inc.Description: SOT-323, MOSFET
Packaging: Tape & Reel (TR)
Package / Case: SC-70, SOT-323
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 360mA (Ta)
Rds On (Max) @ Id, Vgs: 1.6Ohm @ 500mA, 10V
Power Dissipation (Max): 236mW (Ta)
Vgs(th) (Max) @ Id: 1.5V @ 250µA
Supplier Device Package: SOT-323
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 50 V
Gate Charge (Qg) (Max) @ Vgs: 1 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 50 pF @ 25 V
auf Bestellung 42000 Stücke:
Lieferzeit 21-28 Tag (e)
3000+0.087 EUR
6000+ 0.081 EUR
9000+ 0.067 EUR
30000+ 0.066 EUR
Mindestbestellmenge: 3000
PJC138K_R1_00001PanjitMOSFET 50V N-Channel Enhancement Mode MOSFETESD Protected
auf Bestellung 140321 Stücke:
Lieferzeit 14-28 Tag (e)
103+0.51 EUR
145+ 0.36 EUR
358+ 0.15 EUR
1000+ 0.1 EUR
3000+ 0.081 EUR
9000+ 0.062 EUR
45000+ 0.055 EUR
Mindestbestellmenge: 103
PJC138K_R2_00001PanjitMOSFET 8KW/TR/13"/HF/12K/SOT-323/MOS/SOT/NFET-50TAMN/NF50TA-QI01/PJ///
Produkt ist nicht verfügbar
PJC138L_R1_00001Panjit International Inc.Description: 60V N-CHANNEL ENHANCEMENT MODE M
auf Bestellung 2606 Stücke:
Lieferzeit 21-28 Tag (e)
22+1.22 EUR
29+ 0.91 EUR
100+ 0.52 EUR
500+ 0.34 EUR
1000+ 0.26 EUR
Mindestbestellmenge: 22
PJC138L_R1_00001Panjit International Inc.Description: 60V N-CHANNEL ENHANCEMENT MODE M
Produkt ist nicht verfügbar
PJC138L_R1_00001PanjitMOSFET 60V P-Channel Enhancement Mode MOSFET
Produkt ist nicht verfügbar
PJC138L_R2_00001PanjitMOSFET /C8L/TR/13"/HF/12K/SOT-323/MOS/SOT/NFET-60TAMN/NF60TA-QI01/PJ///
Produkt ist nicht verfügbar
PJC16F73-1/SP
auf Bestellung 26 Stücke:
Lieferzeit 21-28 Tag (e)
PJC7002H_R1_00001Panjit International Inc.Description: 60V N-CHANNEL ENHANCEMENT MODE M
Packaging: Tape & Reel (TR)
Package / Case: SC-70, SOT-323
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 250mA (Ta)
Rds On (Max) @ Id, Vgs: 5Ohm @ 300mA, 10V
Power Dissipation (Max): 350mW (Ta)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: SOT-323
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 1.3 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 22 pF @ 25 V
Produkt ist nicht verfügbar
PJC7002H_R1_00001PanjitMOSFET /C2H/TR/7"/HF/3K/SOT-323/MOS/SOT/NFET-60TAMN/NF60TA-QI04/PJ///
Produkt ist nicht verfügbar
PJC7002H_R1_00001Panjit International Inc.Description: 60V N-CHANNEL ENHANCEMENT MODE M
Packaging: Cut Tape (CT)
Package / Case: SC-70, SOT-323
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 250mA (Ta)
Rds On (Max) @ Id, Vgs: 5Ohm @ 300mA, 10V
Power Dissipation (Max): 350mW (Ta)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: SOT-323
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 1.3 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 22 pF @ 25 V
auf Bestellung 575 Stücke:
Lieferzeit 21-28 Tag (e)
46+0.57 EUR
51+ 0.52 EUR
100+ 0.28 EUR
500+ 0.17 EUR
Mindestbestellmenge: 46
PJC7201SQUARE D BY SCHNEIDER ELECTRICDescription: SQUARE D BY SCHNEIDER ELECTRIC - PJC7201 - ELECTRIC JOINT COMPOUND, CIRCUIT BREAKER
tariffCode: 34031980
productTraceability: No
Behältertyp: Tube
rohsCompliant: NA
Gewicht: 2oz
euEccn: NLR
Volumen: 59.15ml
hazardous: false
rohsPhthalatesCompliant: NA
directShipCharge: 25
usEccn: EAR99
Produktpalette: -
SVHC: To Be Advised
auf Bestellung 34 Stücke:
Lieferzeit 14-21 Tag (e)
PJC7400_R1_00001Panjit International Inc.Description: SOT-323, MOSFET
Packaging: Tape & Reel (TR)
Package / Case: SC-70, SOT-323
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 1.9A (Ta)
Rds On (Max) @ Id, Vgs: 70mOhm @ 1.9A, 10V
Power Dissipation (Max): 350mW (Ta)
Vgs(th) (Max) @ Id: 1.2V @ 250µA
Supplier Device Package: SOT-323
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 10V
Vgs (Max): ±12V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 4.8 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 447 pF @ 15 V
auf Bestellung 174000 Stücke:
Lieferzeit 21-28 Tag (e)
3000+0.23 EUR
9000+ 0.2 EUR
75000+ 0.17 EUR
150000+ 0.16 EUR
Mindestbestellmenge: 3000
PJC7400_R1_00001PanJit SemiconductorCategory: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 1.9A; Idm: 7.6A; 350mW; SOT323
Type of transistor: N-MOSFET
Case: SOT323
Mounting: SMD
Kind of package: reel; tape
Power dissipation: 0.35W
On-state resistance: 0.11Ω
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 1.9A
Gate charge: 4.8nC
Kind of channel: enhanced
Gate-source voltage: ±12V
Pulsed drain current: 7.6A
Anzahl je Verpackung: 5 Stücke
auf Bestellung 6000 Stücke:
Lieferzeit 7-14 Tag (e)
360+0.2 EUR
545+ 0.13 EUR
605+ 0.12 EUR
740+ 0.097 EUR
785+ 0.092 EUR
9000+ 0.089 EUR
Mindestbestellmenge: 360
PJC7400_R1_00001PanJit SemiconductorCategory: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 1.9A; Idm: 7.6A; 350mW; SOT323
Type of transistor: N-MOSFET
Case: SOT323
Mounting: SMD
Kind of package: reel; tape
Power dissipation: 0.35W
On-state resistance: 0.11Ω
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 1.9A
Gate charge: 4.8nC
Kind of channel: enhanced
Gate-source voltage: ±12V
Pulsed drain current: 7.6A
auf Bestellung 6000 Stücke:
Lieferzeit 14-21 Tag (e)
360+0.2 EUR
545+ 0.13 EUR
605+ 0.12 EUR
740+ 0.097 EUR
785+ 0.092 EUR
Mindestbestellmenge: 360
PJC7400_R1_00001PanjitMOSFET 30V N-Channel Enhancement Mode MOSFET
auf Bestellung 6070 Stücke:
Lieferzeit 14-28 Tag (e)
43+1.22 EUR
57+ 0.91 EUR
100+ 0.57 EUR
500+ 0.39 EUR
Mindestbestellmenge: 43
PJC7400_R1_00001Panjit International Inc.Description: SOT-323, MOSFET
Packaging: Cut Tape (CT)
Package / Case: SC-70, SOT-323
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 1.9A (Ta)
Rds On (Max) @ Id, Vgs: 70mOhm @ 1.9A, 10V
Power Dissipation (Max): 350mW (Ta)
Vgs(th) (Max) @ Id: 1.2V @ 250µA
Supplier Device Package: SOT-323
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 10V
Vgs (Max): ±12V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 4.8 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 447 pF @ 15 V
auf Bestellung 184204 Stücke:
Lieferzeit 21-28 Tag (e)
25+1.07 EUR
35+ 0.75 EUR
100+ 0.38 EUR
500+ 0.33 EUR
1000+ 0.26 EUR
Mindestbestellmenge: 25
PJC7400_R2_00001PanjitMOSFET /C00/TR/13"/HF/12K/SOT-323/MOS/SOT/NFET-30TAMN/NF30TA-QI02/PJ///
Produkt ist nicht verfügbar
PJC7401_R1_00001PanJit SemiconductorCategory: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -30V; -1.5A; Idm: -6A; 350mW; SOT323
Type of transistor: P-MOSFET
Case: SOT323
Mounting: SMD
Kind of package: reel; tape
Power dissipation: 0.35W
On-state resistance: 0.18Ω
Polarisation: unipolar
Drain-source voltage: -30V
Drain current: -1.5A
Gate charge: 11nC
Kind of channel: enhanced
Gate-source voltage: ±12V
Pulsed drain current: -6A
Anzahl je Verpackung: 5 Stücke
auf Bestellung 2990 Stücke:
Lieferzeit 7-14 Tag (e)
360+0.2 EUR
545+ 0.13 EUR
605+ 0.12 EUR
725+ 0.099 EUR
770+ 0.093 EUR
9000+ 0.089 EUR
Mindestbestellmenge: 360
PJC7401_R1_00001Panjit International Inc.Description: SOT-323, MOSFET
Packaging: Cut Tape (CT)
Package / Case: SC-70, SOT-323
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 1.5A (Ta)
Rds On (Max) @ Id, Vgs: 115mOhm @ 1.5A, 10V
Power Dissipation (Max): 350mW (Ta)
Vgs(th) (Max) @ Id: 1.3V @ 250µA
Supplier Device Package: SOT-323
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 10V
Vgs (Max): ±12V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 11 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 443 pF @ 15 V
auf Bestellung 31458 Stücke:
Lieferzeit 21-28 Tag (e)
26+1.01 EUR
37+ 0.72 EUR
100+ 0.36 EUR
500+ 0.32 EUR
1000+ 0.25 EUR
Mindestbestellmenge: 26
PJC7401_R1_00001PanJit SemiconductorCategory: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -30V; -1.5A; Idm: -6A; 350mW; SOT323
Type of transistor: P-MOSFET
Case: SOT323
Mounting: SMD
Kind of package: reel; tape
Power dissipation: 0.35W
On-state resistance: 0.18Ω
Polarisation: unipolar
Drain-source voltage: -30V
Drain current: -1.5A
Gate charge: 11nC
Kind of channel: enhanced
Gate-source voltage: ±12V
Pulsed drain current: -6A
auf Bestellung 2990 Stücke:
Lieferzeit 14-21 Tag (e)
360+0.2 EUR
545+ 0.13 EUR
605+ 0.12 EUR
725+ 0.099 EUR
770+ 0.093 EUR
Mindestbestellmenge: 360
PJC7401_R1_00001Panjit International Inc.Description: SOT-323, MOSFET
Packaging: Tape & Reel (TR)
Package / Case: SC-70, SOT-323
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 1.5A (Ta)
Rds On (Max) @ Id, Vgs: 115mOhm @ 1.5A, 10V
Power Dissipation (Max): 350mW (Ta)
Vgs(th) (Max) @ Id: 1.3V @ 250µA
Supplier Device Package: SOT-323
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 10V
Vgs (Max): ±12V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 11 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 443 pF @ 15 V
auf Bestellung 30000 Stücke:
Lieferzeit 21-28 Tag (e)
3000+0.22 EUR
9000+ 0.19 EUR
Mindestbestellmenge: 3000
PJC7401_R1_00001PanjitMOSFET /C01/TR/7"/HF/3K/SOT-323/MOS/SOT/NFET-30TAMP/NF30TA-QI01/PJ///
Produkt ist nicht verfügbar
PJC7401_R2_00001PanjitMOSFET C01/TR/13"/HF/12K/SOT-323/MOS/SOT/NFET-30TAMP/NF30TA-QI01/PJ///
Produkt ist nicht verfügbar
PJC7403_R1_00001PanjitMOSFET /C03/TR/7"/HF/3K/SOT-323/MOS/SOT/NFET-20TAMP/NF20TA-QI01/PJ///
Produkt ist nicht verfügbar
PJC7403_R1_00001Panjit International Inc.Description: 20V P-CHANNEL ENHANCEMENT MODE M
auf Bestellung 1525 Stücke:
Lieferzeit 21-28 Tag (e)
23+1.17 EUR
30+ 0.87 EUR
100+ 0.54 EUR
500+ 0.37 EUR
1000+ 0.29 EUR
Mindestbestellmenge: 23
PJC7403_R1_00001Panjit International Inc.Description: 20V P-CHANNEL ENHANCEMENT MODE M
Produkt ist nicht verfügbar
PJC7403_R2_00001PanjitMOSFET /C03/TR/13"/HF/12K/SOT-323/MOS/SOT/NFET-20TAMP/NF20TA-QI01/PJ///
Produkt ist nicht verfügbar
PJC7404_R1_00001PanjitMOSFET 20V P-Channel Enhancement Mode MOSFETESD Protected
auf Bestellung 5978 Stücke:
Lieferzeit 14-28 Tag (e)
50+1.04 EUR
71+ 0.73 EUR
159+ 0.33 EUR
1000+ 0.26 EUR
3000+ 0.22 EUR
9000+ 0.2 EUR
24000+ 0.18 EUR
Mindestbestellmenge: 50
PJC7404_R1_00001Panjit International Inc.Description: SOT-323, MOSFET
Packaging: Cut Tape (CT)
Package / Case: SC-70, SOT-323
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 1A (Ta)
Rds On (Max) @ Id, Vgs: 150mOhm @ 1A, 4.5V
Power Dissipation (Max): 350mW (Ta)
Vgs(th) (Max) @ Id: 1V @ 250µA
Supplier Device Package: SOT-323
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
Vgs (Max): ±8V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 1.6 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 92 pF @ 10 V
auf Bestellung 26442 Stücke:
Lieferzeit 21-28 Tag (e)
25+1.07 EUR
35+ 0.75 EUR
100+ 0.38 EUR
500+ 0.33 EUR
1000+ 0.26 EUR
Mindestbestellmenge: 25
PJC7404_R1_00001PanJit SemiconductorCategory: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 20V; 1A; Idm: 4A; 350mW; SOT323
Kind of package: reel; tape
Drain-source voltage: 20V
Drain current: 1A
On-state resistance: 0.4Ω
Type of transistor: N-MOSFET
Power dissipation: 0.35W
Polarisation: unipolar
Gate charge: 1.6nC
Kind of channel: enhanced
Gate-source voltage: ±8V
Pulsed drain current: 4A
Mounting: SMD
Case: SOT323
Anzahl je Verpackung: 5 Stücke
auf Bestellung 6000 Stücke:
Lieferzeit 7-14 Tag (e)
365+0.2 EUR
570+ 0.13 EUR
625+ 0.11 EUR
770+ 0.093 EUR
820+ 0.087 EUR
9000+ 0.084 EUR
Mindestbestellmenge: 365
PJC7404_R1_00001PanJit SemiconductorCategory: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 20V; 1A; Idm: 4A; 350mW; SOT323
Kind of package: reel; tape
Drain-source voltage: 20V
Drain current: 1A
On-state resistance: 0.4Ω
Type of transistor: N-MOSFET
Power dissipation: 0.35W
Polarisation: unipolar
Gate charge: 1.6nC
Kind of channel: enhanced
Gate-source voltage: ±8V
Pulsed drain current: 4A
Mounting: SMD
Case: SOT323
auf Bestellung 6000 Stücke:
Lieferzeit 14-21 Tag (e)
365+0.2 EUR
570+ 0.13 EUR
625+ 0.11 EUR
770+ 0.093 EUR
820+ 0.087 EUR
Mindestbestellmenge: 365
PJC7404_R1_00001Panjit International Inc.Description: SOT-323, MOSFET
Packaging: Tape & Reel (TR)
Package / Case: SC-70, SOT-323
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 1A (Ta)
Rds On (Max) @ Id, Vgs: 150mOhm @ 1A, 4.5V
Power Dissipation (Max): 350mW (Ta)
Vgs(th) (Max) @ Id: 1V @ 250µA
Supplier Device Package: SOT-323
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
Vgs (Max): ±8V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 1.6 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 92 pF @ 10 V
auf Bestellung 18000 Stücke:
Lieferzeit 21-28 Tag (e)
3000+0.23 EUR
9000+ 0.2 EUR
Mindestbestellmenge: 3000
PJC7407_R1_00001Panjit International Inc.Description: SOT-323, MOSFET
Packaging: Tape & Reel (TR)
Package / Case: SC-70, SOT-323
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 1.3A (Ta)
Rds On (Max) @ Id, Vgs: 125mOhm @ 1.3A, 4.5V
Power Dissipation (Max): 350mW (Ta)
Vgs(th) (Max) @ Id: 1.2V @ 250µA
Supplier Device Package: SOT-323
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
Vgs (Max): ±12V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 5.4 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 416 pF @ 10 V
auf Bestellung 30000 Stücke:
Lieferzeit 21-28 Tag (e)
3000+0.23 EUR
6000+ 0.22 EUR
9000+ 0.2 EUR
30000+ 0.19 EUR
Mindestbestellmenge: 3000
PJC7407_R1_00001PanJit SemiconductorCategory: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -20V; -1.3A; Idm: -5.2A; 350mW
On-state resistance: 0.2Ω
Type of transistor: P-MOSFET
Power dissipation: 0.35W
Polarisation: unipolar
Kind of package: reel; tape
Gate charge: 5.4nC
Kind of channel: enhanced
Gate-source voltage: ±12V
Pulsed drain current: -5.2A
Mounting: SMD
Case: SOT323
Drain-source voltage: -20V
Drain current: -1.3A
Anzahl je Verpackung: 5 Stücke
auf Bestellung 2985 Stücke:
Lieferzeit 7-14 Tag (e)
365+0.2 EUR
585+ 0.12 EUR
650+ 0.11 EUR
795+ 0.09 EUR
835+ 0.086 EUR
9000+ 0.082 EUR
Mindestbestellmenge: 365
PJC7407_R1_00001PanJit SemiconductorCategory: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -20V; -1.3A; Idm: -5.2A; 350mW
On-state resistance: 0.2Ω
Type of transistor: P-MOSFET
Power dissipation: 0.35W
Polarisation: unipolar
Kind of package: reel; tape
Gate charge: 5.4nC
Kind of channel: enhanced
Gate-source voltage: ±12V
Pulsed drain current: -5.2A
Mounting: SMD
Case: SOT323
Drain-source voltage: -20V
Drain current: -1.3A
auf Bestellung 2985 Stücke:
Lieferzeit 14-21 Tag (e)
365+0.2 EUR
585+ 0.12 EUR
650+ 0.11 EUR
795+ 0.09 EUR
835+ 0.086 EUR
Mindestbestellmenge: 365
PJC7407_R1_00001Panjit International Inc.Description: SOT-323, MOSFET
Packaging: Cut Tape (CT)
Package / Case: SC-70, SOT-323
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 1.3A (Ta)
Rds On (Max) @ Id, Vgs: 125mOhm @ 1.3A, 4.5V
Power Dissipation (Max): 350mW (Ta)
Vgs(th) (Max) @ Id: 1.2V @ 250µA
Supplier Device Package: SOT-323
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
Vgs (Max): ±12V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 5.4 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 416 pF @ 10 V
auf Bestellung 37266 Stücke:
Lieferzeit 21-28 Tag (e)
25+1.04 EUR
36+ 0.73 EUR
100+ 0.37 EUR
500+ 0.33 EUR
1000+ 0.25 EUR
Mindestbestellmenge: 25
PJC7407_R1_00001PanjitMOSFET 20V P-Channel Enhancement Mode MOSFET
auf Bestellung 156673 Stücke:
Lieferzeit 14-28 Tag (e)
50+1.04 EUR
71+ 0.73 EUR
159+ 0.33 EUR
1000+ 0.26 EUR
3000+ 0.22 EUR
9000+ 0.2 EUR
24000+ 0.19 EUR
Mindestbestellmenge: 50
PJC7407_R2_00001PanjitMOSFET C07/TR/13"/HF/12K/SOT-323/MOS/SOT/NFET-20TAMP/NF20TA-QI03/PJ///
Produkt ist nicht verfügbar
PJC7409-R1-00001PanjitMOSFET SOT-323/MOS/SOT/NFET-20TAMP
Produkt ist nicht verfügbar
PJC7409-R2-00001PanjitMOSFET
Produkt ist nicht verfügbar
PJC7409_R1_00001Panjit International Inc.Description: 20V P-CHANNEL ENHANCEMENT MODE M
Packaging: Tape & Reel (TR)
Package / Case: SC-70, SOT-323
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 500mA (Ta)
Rds On (Max) @ Id, Vgs: 1.2Ohm @ 500mA, 4.5V
Power Dissipation (Max): 350mW (Ta)
Vgs(th) (Max) @ Id: 1V @ 250µA
Supplier Device Package: SOT-323
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 1.2V, 4.5V
Vgs (Max): ±10V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 1.4 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 38 pF @ 10 V
auf Bestellung 3000 Stücke:
Lieferzeit 21-28 Tag (e)
3000+0.24 EUR
Mindestbestellmenge: 3000
PJC7409_R1_00001PanjitMOSFET 20V P-Channel Enhancement Mode MOSFET
auf Bestellung 2750 Stücke:
Lieferzeit 14-28 Tag (e)
47+1.11 EUR
63+ 0.83 EUR
100+ 0.52 EUR
1000+ 0.28 EUR
3000+ 0.24 EUR
9000+ 0.21 EUR
24000+ 0.2 EUR
Mindestbestellmenge: 47
PJC7409_R1_00001Panjit International Inc.Description: 20V P-CHANNEL ENHANCEMENT MODE M
Packaging: Cut Tape (CT)
Package / Case: SC-70, SOT-323
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 500mA (Ta)
Rds On (Max) @ Id, Vgs: 1.2Ohm @ 500mA, 4.5V
Power Dissipation (Max): 350mW (Ta)
Vgs(th) (Max) @ Id: 1V @ 250µA
Supplier Device Package: SOT-323
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 1.2V, 4.5V
Vgs (Max): ±10V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 1.4 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 38 pF @ 10 V
auf Bestellung 5486 Stücke:
Lieferzeit 21-28 Tag (e)
24+1.09 EUR
34+ 0.78 EUR
100+ 0.39 EUR
500+ 0.35 EUR
1000+ 0.27 EUR
Mindestbestellmenge: 24
PJC7409_R2_00001PanjitMOSFET 20V P-Channel Enhancement Mode MOSFET
Produkt ist nicht verfügbar
PJC7410-R1-00001PanjitMOSFET SOT-323/MOS/SOT/NFET-20TAMN
Produkt ist nicht verfügbar
PJC7410-R2-00001PanjitMOSFET
Produkt ist nicht verfügbar
PJC7410_R1_00001Panjit International Inc.Description: 20V N-CHANNEL ENHANCEMENT MODE M
Packaging: Cut Tape (CT)
Package / Case: SC-70, SOT-323
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 500mA (Ta)
Rds On (Max) @ Id, Vgs: 400mOhm @ 500mA, 4.5V
Power Dissipation (Max): 350mW (Ta)
Vgs(th) (Max) @ Id: 900mV @ 250µA
Supplier Device Package: SOT-323
Drive Voltage (Max Rds On, Min Rds On): 1.2V, 4.5V
Vgs (Max): ±10V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 1.4 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 67 pF @ 10 V
auf Bestellung 2628 Stücke:
Lieferzeit 21-28 Tag (e)
24+1.09 EUR
34+ 0.78 EUR
100+ 0.39 EUR
500+ 0.35 EUR
1000+ 0.27 EUR
Mindestbestellmenge: 24
PJC7410_R1_00001Panjit International Inc.Description: 20V N-CHANNEL ENHANCEMENT MODE M
Packaging: Tape & Reel (TR)
Package / Case: SC-70, SOT-323
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 500mA (Ta)
Rds On (Max) @ Id, Vgs: 400mOhm @ 500mA, 4.5V
Power Dissipation (Max): 350mW (Ta)
Vgs(th) (Max) @ Id: 900mV @ 250µA
Supplier Device Package: SOT-323
Drive Voltage (Max Rds On, Min Rds On): 1.2V, 4.5V
Vgs (Max): ±10V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 1.4 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 67 pF @ 10 V
Produkt ist nicht verfügbar
PJC7410_R1_00001PanjitMOSFET 20V N-Channel Enhancement Mode MOSFET
auf Bestellung 2765 Stücke:
Lieferzeit 14-28 Tag (e)
47+1.11 EUR
67+ 0.78 EUR
149+ 0.35 EUR
1000+ 0.27 EUR
3000+ 0.24 EUR
9000+ 0.21 EUR
24000+ 0.2 EUR
Mindestbestellmenge: 47
PJC7410_R2_00001PanjitMOSFET 20V N-Channel Enhancement Mode MOSFET
Produkt ist nicht verfügbar
PJC7412_R1_00001PanjitMOSFET 30V P-Channel Enhancement Mode MOSFET-ESD Protected
Produkt ist nicht verfügbar
PJC7412_R2_00001PanjitMOSFET 30V P-Channel Enhancement Mode MOSFET-ESD Protected
Produkt ist nicht verfügbar
PJC7428_R1_00001Panjit International Inc.Description: SOT-323, MOSFET
Packaging: Cut Tape (CT)
Package / Case: SC-70, SOT-323
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 300mA (Ta)
Rds On (Max) @ Id, Vgs: 1.2Ohm @ 300mA, 4.5V
Power Dissipation (Max): 350mW (Ta)
Vgs(th) (Max) @ Id: 1V @ 250µA
Supplier Device Package: SOT-323
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 1.2V, 4.5V
Vgs (Max): ±10V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 0.9 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 45 pF @ 10 V
auf Bestellung 19884 Stücke:
Lieferzeit 21-28 Tag (e)
25+1.07 EUR
34+ 0.79 EUR
100+ 0.45 EUR
500+ 0.29 EUR
1000+ 0.23 EUR
Mindestbestellmenge: 25
PJC7428_R1_00001Panjit International Inc.Description: SOT-323, MOSFET
Packaging: Tape & Reel (TR)
Package / Case: SC-70, SOT-323
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 300mA (Ta)
Rds On (Max) @ Id, Vgs: 1.2Ohm @ 300mA, 4.5V
Power Dissipation (Max): 350mW (Ta)
Vgs(th) (Max) @ Id: 1V @ 250µA
Supplier Device Package: SOT-323
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 1.2V, 4.5V
Vgs (Max): ±10V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 0.9 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 45 pF @ 10 V
auf Bestellung 12000 Stücke:
Lieferzeit 21-28 Tag (e)
3000+0.2 EUR
Mindestbestellmenge: 3000
PJC7428_R1_00001PanJit SemiconductorCategory: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 300mA; Idm: 0.6A; 350mW; SOT323
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 0.3A
Pulsed drain current: 0.6A
Power dissipation: 0.35W
Case: SOT323
Gate-source voltage: ±10V
On-state resistance: 4Ω
Mounting: SMD
Gate charge: 0.9nC
Kind of package: reel; tape
Kind of channel: enhanced
Anzahl je Verpackung: 5 Stücke
Produkt ist nicht verfügbar
PJC7428_R1_00001PanJit SemiconductorCategory: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 300mA; Idm: 0.6A; 350mW; SOT323
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 0.3A
Pulsed drain current: 0.6A
Power dissipation: 0.35W
Case: SOT323
Gate-source voltage: ±10V
On-state resistance: 4Ω
Mounting: SMD
Gate charge: 0.9nC
Kind of package: reel; tape
Kind of channel: enhanced
Produkt ist nicht verfügbar
PJC7438-R1-00001PanjitMOSFET SOT-323/MOS/SOT/NFET-50TAMN
Produkt ist nicht verfügbar
PJC7438-R2-00001PanjitMOSFET
Produkt ist nicht verfügbar
PJC7438_R1_00001PanjitMOSFET 50V P-Channel Enhancement Mode MOSFET-ESD Protected
auf Bestellung 2937 Stücke:
Lieferzeit 14-28 Tag (e)
50+1.04 EUR
71+ 0.73 EUR
159+ 0.33 EUR
1000+ 0.26 EUR
3000+ 0.23 EUR
9000+ 0.2 EUR
24000+ 0.18 EUR
Mindestbestellmenge: 50
PJC7438_R1_00001Panjit International Inc.Description: SOT-323, MOSFET
Packaging: Cut Tape (CT)
Package / Case: SC-70, SOT-323
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 400mA (Ta)
Rds On (Max) @ Id, Vgs: 1.45Ohm @ 500mA, 10V
Power Dissipation (Max): 350mW (Ta)
Vgs(th) (Max) @ Id: 1V @ 250µA
Supplier Device Package: SOT-323
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 50 V
Gate Charge (Qg) (Max) @ Vgs: 0.95 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 36 pF @ 25 V
auf Bestellung 3780 Stücke:
Lieferzeit 21-28 Tag (e)
25+1.04 EUR
36+ 0.73 EUR
100+ 0.37 EUR
500+ 0.33 EUR
1000+ 0.25 EUR
Mindestbestellmenge: 25
PJC7438_R1_00001Panjit International Inc.Description: SOT-323, MOSFET
Packaging: Tape & Reel (TR)
Package / Case: SC-70, SOT-323
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 400mA (Ta)
Rds On (Max) @ Id, Vgs: 1.45Ohm @ 500mA, 10V
Power Dissipation (Max): 350mW (Ta)
Vgs(th) (Max) @ Id: 1V @ 250µA
Supplier Device Package: SOT-323
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 50 V
Gate Charge (Qg) (Max) @ Vgs: 0.95 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 36 pF @ 25 V
auf Bestellung 3000 Stücke:
Lieferzeit 21-28 Tag (e)
3000+0.23 EUR
Mindestbestellmenge: 3000
PJC7438_R2_00001PanjitMOSFET 50V P-Channel Enhancement Mode MOSFET-ESD Protected
Produkt ist nicht verfügbar
PJC7439-AU_R1_000A1PanjitMOSFET 60V P-Channel Enhancement Mode MOSFET
Produkt ist nicht verfügbar
PJC7439-AU_R1_000A1PanJit SemiconductorCategory: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -60V; -250mA; Idm: -1A; 350mW
Drain-source voltage: -60V
Drain current: -250mA
On-state resistance: 13Ω
Type of transistor: P-MOSFET
Application: automotive industry
Power dissipation: 0.35W
Polarisation: unipolar
Kind of package: reel; tape
Gate charge: 1.1nC
Kind of channel: enhanced
Gate-source voltage: ±20V
Pulsed drain current: -1A
Mounting: SMD
Case: SOT323
Anzahl je Verpackung: 5 Stücke
auf Bestellung 3000 Stücke:
Lieferzeit 7-14 Tag (e)
715+0.1 EUR
1025+ 0.07 EUR
1135+ 0.063 EUR
1380+ 0.052 EUR
1455+ 0.049 EUR
9000+ 0.047 EUR
Mindestbestellmenge: 715
PJC7439-AU_R1_000A1PanJit SemiconductorCategory: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -60V; -250mA; Idm: -1A; 350mW
Drain-source voltage: -60V
Drain current: -250mA
On-state resistance: 13Ω
Type of transistor: P-MOSFET
Application: automotive industry
Power dissipation: 0.35W
Polarisation: unipolar
Kind of package: reel; tape
Gate charge: 1.1nC
Kind of channel: enhanced
Gate-source voltage: ±20V
Pulsed drain current: -1A
Mounting: SMD
Case: SOT323
auf Bestellung 3000 Stücke:
Lieferzeit 14-21 Tag (e)
715+0.1 EUR
1025+ 0.07 EUR
1135+ 0.063 EUR
1380+ 0.052 EUR
1455+ 0.049 EUR
Mindestbestellmenge: 715
PJC7439-AU_R1_000A1Panjit International Inc.Description: SOT-323, MOSFET
Packaging: Cut Tape (CT)
Package / Case: SC-70, SOT-323
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 250mA (Ta)
Rds On (Max) @ Id, Vgs: 4Ohm @ 500mA, 10V
Power Dissipation (Max): 350mW (Ta)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: SOT-323
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 1.1 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 51 pF @ 25 V
Grade: Automotive
Qualification: AEC-Q101
auf Bestellung 51390 Stücke:
Lieferzeit 21-28 Tag (e)
32+0.83 EUR
45+ 0.59 EUR
100+ 0.3 EUR
500+ 0.24 EUR
1000+ 0.18 EUR
Mindestbestellmenge: 32
PJC7439-AU_R1_000A1Panjit International Inc.Description: SOT-323, MOSFET
Packaging: Tape & Reel (TR)
Package / Case: SC-70, SOT-323
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 250mA (Ta)
Rds On (Max) @ Id, Vgs: 4Ohm @ 500mA, 10V
Power Dissipation (Max): 350mW (Ta)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: SOT-323
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 1.1 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 51 pF @ 25 V
Grade: Automotive
Qualification: AEC-Q101
auf Bestellung 39000 Stücke:
Lieferzeit 21-28 Tag (e)
3000+0.15 EUR
6000+ 0.14 EUR
9000+ 0.13 EUR
30000+ 0.12 EUR
Mindestbestellmenge: 3000
PJC7439_R1_00001Panjit International Inc.Description: 60V P-CHANNEL ENHANCEMENT MODE M
Packaging: Tape & Reel (TR)
Package / Case: SC-70, SOT-323
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 250mA (Ta)
Rds On (Max) @ Id, Vgs: 4Ohm @ 500mA, 10V
Power Dissipation (Max): 350mW (Ta)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: SOT-323
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 1.1 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 51 pF @ 25 V
auf Bestellung 3000 Stücke:
Lieferzeit 21-28 Tag (e)
3000+0.23 EUR
Mindestbestellmenge: 3000
PJC7439_R1_00001Panjit International Inc.Description: 60V P-CHANNEL ENHANCEMENT MODE M
Packaging: Cut Tape (CT)
Package / Case: SC-70, SOT-323
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 250mA (Ta)
Rds On (Max) @ Id, Vgs: 4Ohm @ 500mA, 10V
Power Dissipation (Max): 350mW (Ta)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: SOT-323
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 1.1 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 51 pF @ 25 V
auf Bestellung 5826 Stücke:
Lieferzeit 21-28 Tag (e)
25+1.04 EUR
36+ 0.73 EUR
100+ 0.37 EUR
500+ 0.33 EUR
1000+ 0.25 EUR
Mindestbestellmenge: 25
PJC7439_R1_00001PanjitMOSFET 60V P-Channel Enhancement Mode MOSFET
auf Bestellung 2745 Stücke:
Lieferzeit 14-28 Tag (e)
50+1.04 EUR
67+ 0.78 EUR
107+ 0.49 EUR
1000+ 0.26 EUR
3000+ 0.23 EUR
9000+ 0.2 EUR
24000+ 0.18 EUR
Mindestbestellmenge: 50
PJC7472B_R1_00001PanjitMOSFET /C2B/TR/7"/HF/3K/SOT-323/MOS/SOT/NFET-60TAMN/NF60TA-QI02/PJ///
Produkt ist nicht verfügbar
PJC7476_R1_00001PanJit SemiconductorCategory: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 300mA; Idm: 0.8A; 350mW
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 0.3A
Pulsed drain current: 0.8A
Power dissipation: 0.35W
Case: SOT323
Gate-source voltage: ±20V
On-state resistance: 9Ω
Mounting: SMD
Gate charge: 1.8nC
Kind of package: reel; tape
Kind of channel: enhanced
Produkt ist nicht verfügbar
PJC7476_R1_00001PanjitMOSFET 100V P-Channel Enhancement Mode MOSFET-ESD Protected
auf Bestellung 2687 Stücke:
Lieferzeit 14-28 Tag (e)
50+1.04 EUR
67+ 0.78 EUR
107+ 0.49 EUR
1000+ 0.26 EUR
3000+ 0.23 EUR
9000+ 0.2 EUR
24000+ 0.18 EUR
Mindestbestellmenge: 50
PJC7476_R1_00001Panjit International Inc.Description: 100V N-CHANNEL ENHANCEMENT MODE
Produkt ist nicht verfügbar
PJC7476_R1_00001Panjit International Inc.Description: 100V N-CHANNEL ENHANCEMENT MODE
auf Bestellung 2975 Stücke:
Lieferzeit 21-28 Tag (e)
24+1.09 EUR
32+ 0.84 EUR
100+ 0.52 EUR
500+ 0.36 EUR
1000+ 0.27 EUR
Mindestbestellmenge: 24
PJC7476_R1_00001PanJit SemiconductorCategory: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 300mA; Idm: 0.8A; 350mW
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 0.3A
Pulsed drain current: 0.8A
Power dissipation: 0.35W
Case: SOT323
Gate-source voltage: ±20V
On-state resistance: 9Ω
Mounting: SMD
Gate charge: 1.8nC
Kind of package: reel; tape
Kind of channel: enhanced
Anzahl je Verpackung: 5 Stücke
Produkt ist nicht verfügbar
PJCAPSwitchcraft Inc.Description: HI-AMP POWER JACK CAP
Packaging: Bulk
Color: Black
For Use With/Related Products: Power Jack
Accessory Type: Cap (Cover)
auf Bestellung 40112 Stücke:
Lieferzeit 21-28 Tag (e)
7+4.24 EUR
10+ 3.68 EUR
25+ 3.53 EUR
50+ 3.45 EUR
100+ 3.29 EUR
300+ 2.98 EUR
500+ 2.76 EUR
Mindestbestellmenge: 7
PJCAPSwitchcraftDC Power Connectors HI-AMPERAGE POWER JA
auf Bestellung 1956 Stücke:
Lieferzeit 14-28 Tag (e)
12+4.65 EUR
14+ 3.9 EUR
100+ 3.46 EUR
200+ 3.22 EUR
500+ 2.89 EUR
1000+ 2.81 EUR
5000+ 2.78 EUR
Mindestbestellmenge: 12
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auf Bestellung 4000 Stücke:
Lieferzeit 21-28 Tag (e)