Produkte > PJX
Bezeichnung | Hersteller | Beschreibung | Verfügbarkeit | Preis ohne MwSt | ||||||||||||||
---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
PJX-2 (25 Ft) | Global Industrial | Description: 25' INSTALLATION KIT FOR SPLIT S Packaging: Box Type: Installation Kit Part Status: Active | auf Bestellung 22 Stücke: Lieferzeit 21-28 Tag (e) |
| ||||||||||||||
PJX138K-AU_R1_000A1 | Panjit International Inc. | Description: 50V N-CHANNEL ENHANCEMENT MODE M | Produkt ist nicht verfügbar | |||||||||||||||
PJX138K-AU_R1_000A1 | Panjit International Inc. | Description: 50V N-CHANNEL ENHANCEMENT MODE M | Produkt ist nicht verfügbar | |||||||||||||||
PJX138K_R1_00001 | PanJit Semiconductor | Category: Multi channel transistors Description: Transistor: N-MOSFET x2; unipolar; 50V; 350mA; Idm: 1.2A; 223mW Type of transistor: N-MOSFET x2 Polarisation: unipolar Drain-source voltage: 50V Drain current: 0.35A Pulsed drain current: 1.2A Power dissipation: 223mW Case: SOT563 Gate-source voltage: ±20V On-state resistance: 4.5Ω Mounting: SMD Gate charge: 1nC Kind of package: reel; tape Kind of channel: enhanced | auf Bestellung 4000 Stücke: Lieferzeit 14-21 Tag (e) |
| ||||||||||||||
PJX138K_R1_00001 | Panjit International Inc. | Description: 50V N-CHANNEL ENHANCEMENT MODE M | Produkt ist nicht verfügbar | |||||||||||||||
PJX138K_R1_00001 | Panjit | MOSFET 50V N-Channel Enhancement Mode MOSFETESD Protected | auf Bestellung 43614 Stücke: Lieferzeit 14-28 Tag (e) |
| ||||||||||||||
PJX138K_R1_00001 | PanJit Semiconductor | Category: Multi channel transistors Description: Transistor: N-MOSFET x2; unipolar; 50V; 350mA; Idm: 1.2A; 223mW Type of transistor: N-MOSFET x2 Polarisation: unipolar Drain-source voltage: 50V Drain current: 0.35A Pulsed drain current: 1.2A Power dissipation: 223mW Case: SOT563 Gate-source voltage: ±20V On-state resistance: 4.5Ω Mounting: SMD Gate charge: 1nC Kind of package: reel; tape Kind of channel: enhanced Anzahl je Verpackung: 5 Stücke | auf Bestellung 4000 Stücke: Lieferzeit 7-14 Tag (e) |
| ||||||||||||||
PJX138K_R1_00001 | Panjit International Inc. | Description: 50V N-CHANNEL ENHANCEMENT MODE M | Produkt ist nicht verfügbar | |||||||||||||||
PJX138K_S1_00001 | Panjit | MOSFET /8KB/TRR/7"/HF/4K/SOT-563/MOS/SOT/NFET-50TEMN/NF50TE-QI01/PJ/// | Produkt ist nicht verfügbar | |||||||||||||||
PJX138L_R1_00001 | Panjit International Inc. | Description: 60V N-CHANNEL ENHANCEMENT MODE M | Produkt ist nicht verfügbar | |||||||||||||||
PJX138L_R1_00001 | Panjit International Inc. | Description: 60V N-CHANNEL ENHANCEMENT MODE M | auf Bestellung 1180 Stücke: Lieferzeit 21-28 Tag (e) |
| ||||||||||||||
PJX138L_R1_00002 | PanJit Semiconductor | Category: Multi channel transistors Description: Transistor: N-MOSFET x2; unipolar; SOT563 Type of transistor: N-MOSFET x2 Polarisation: unipolar Case: SOT563 Mounting: SMD Kind of package: tape Kind of channel: enhanced Anzahl je Verpackung: 1 Stücke | Produkt ist nicht verfügbar | |||||||||||||||
PJX138L_R1_00002 | PanJit Semiconductor | Category: Multi channel transistors Description: Transistor: N-MOSFET x2; unipolar; SOT563 Type of transistor: N-MOSFET x2 Polarisation: unipolar Case: SOT563 Mounting: SMD Kind of package: tape Kind of channel: enhanced | Produkt ist nicht verfügbar | |||||||||||||||
PJX8601_R1_00001 | Panjit International Inc. | Description: COMPLEMENTARY ENHANCEMENT MODE M Packaging: Cut Tape (CT) Package / Case: SOT-563, SOT-666 Mounting Type: Surface Mount Configuration: N and P-Channel Complementary Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 300mW (Ta) Drain to Source Voltage (Vdss): 20V Current - Continuous Drain (Id) @ 25°C: 500mA (Ta) Input Capacitance (Ciss) (Max) @ Vds: 67pF @ 10V, 38pF @ 10V Rds On (Max) @ Id, Vgs: 400mOhm @ 500mA, 4.5V, 1.2Ohm @ 500mA, 4.5V Gate Charge (Qg) (Max) @ Vgs: 1.4nC @ 4.5V Vgs(th) (Max) @ Id: 900mV @ 250µA, 1V @ 250µA Supplier Device Package: SOT-563 | auf Bestellung 4030 Stücke: Lieferzeit 21-28 Tag (e) |
| ||||||||||||||
PJX8601_R1_00001 | Panjit | MOSFET Complementary Enhancement Mode MOSFETESD Protected | auf Bestellung 3968 Stücke: Lieferzeit 14-28 Tag (e) |
| ||||||||||||||
PJX8601_R1_00001 | Panjit International Inc. | Description: COMPLEMENTARY ENHANCEMENT MODE M Packaging: Tape & Reel (TR) Package / Case: SOT-563, SOT-666 Mounting Type: Surface Mount Configuration: N and P-Channel Complementary Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 300mW (Ta) Drain to Source Voltage (Vdss): 20V Current - Continuous Drain (Id) @ 25°C: 500mA (Ta) Input Capacitance (Ciss) (Max) @ Vds: 67pF @ 10V, 38pF @ 10V Rds On (Max) @ Id, Vgs: 400mOhm @ 500mA, 4.5V, 1.2Ohm @ 500mA, 4.5V Gate Charge (Qg) (Max) @ Vgs: 1.4nC @ 4.5V Vgs(th) (Max) @ Id: 900mV @ 250µA, 1V @ 250µA Supplier Device Package: SOT-563 | Produkt ist nicht verfügbar | |||||||||||||||
PJX8603_R1_00001 | PanJit Semiconductor | Category: Multi channel transistors Description: Transistor: N/P-MOSFET; unipolar; 50/-60V; 360/-200mA; 300mW Type of transistor: N/P-MOSFET Polarisation: unipolar Drain-source voltage: 50/-60V Drain current: 360/-200mA Power dissipation: 0.3W Case: SOT563 Gate-source voltage: ±20V On-state resistance: 2.5/7Ω Mounting: SMD Gate charge: 0.95/1.1nC Kind of package: reel; tape Kind of channel: enhanced | auf Bestellung 3950 Stücke: Lieferzeit 14-21 Tag (e) |
| ||||||||||||||
PJX8603_R1_00001 | Panjit International Inc. | Description: MOSFET N/P-CH 50V/60V SOT563 Packaging: Cut Tape (CT) Package / Case: SOT-563, SOT-666 Mounting Type: Surface Mount Configuration: N and P-Channel Complementary Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 300mW (Ta) Drain to Source Voltage (Vdss): 50V, 60V Current - Continuous Drain (Id) @ 25°C: 360mA (Ta), 200mA (Ta) Input Capacitance (Ciss) (Max) @ Vds: 36pF @ 25V, 51pF @ 25V Rds On (Max) @ Id, Vgs: 1.5Ohm @ 500mA, 10V, 6Ohm @ 500mA, 10V Gate Charge (Qg) (Max) @ Vgs: 0.95nC @ 4.5V, 1.1nC @ 4.5V Vgs(th) (Max) @ Id: 1V @ 250µA, 2.5V @ 250µA Supplier Device Package: SOT-563 | auf Bestellung 6880 Stücke: Lieferzeit 21-28 Tag (e) |
| ||||||||||||||
PJX8603_R1_00001 | Panjit International Inc. | Description: MOSFET N/P-CH 50V/60V SOT563 Packaging: Tape & Reel (TR) Package / Case: SOT-563, SOT-666 Mounting Type: Surface Mount Configuration: N and P-Channel Complementary Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 300mW (Ta) Drain to Source Voltage (Vdss): 50V, 60V Current - Continuous Drain (Id) @ 25°C: 360mA (Ta), 200mA (Ta) Input Capacitance (Ciss) (Max) @ Vds: 36pF @ 25V, 51pF @ 25V Rds On (Max) @ Id, Vgs: 1.5Ohm @ 500mA, 10V, 6Ohm @ 500mA, 10V Gate Charge (Qg) (Max) @ Vgs: 0.95nC @ 4.5V, 1.1nC @ 4.5V Vgs(th) (Max) @ Id: 1V @ 250µA, 2.5V @ 250µA Supplier Device Package: SOT-563 | Produkt ist nicht verfügbar | |||||||||||||||
PJX8603_R1_00001 | PanJit Semiconductor | Category: Multi channel transistors Description: Transistor: N/P-MOSFET; unipolar; 50/-60V; 360/-200mA; 300mW Type of transistor: N/P-MOSFET Polarisation: unipolar Drain-source voltage: 50/-60V Drain current: 360/-200mA Power dissipation: 0.3W Case: SOT563 Gate-source voltage: ±20V On-state resistance: 2.5/7Ω Mounting: SMD Gate charge: 0.95/1.1nC Kind of package: reel; tape Kind of channel: enhanced Anzahl je Verpackung: 5 Stücke | auf Bestellung 3950 Stücke: Lieferzeit 7-14 Tag (e) |
| ||||||||||||||
PJX8603_R1_00001 | Panjit | MOSFET Complementary Enhancement Mode MOSFETESD Protected | auf Bestellung 6945 Stücke: Lieferzeit 14-28 Tag (e) |
| ||||||||||||||
PJX8802_R1_00001 | Panjit International Inc. | Description: 20V N-CHANNEL ENHANCEMENT MODE M | Produkt ist nicht verfügbar | |||||||||||||||
PJX8802_R1_00001 | Panjit International Inc. | Description: 20V N-CHANNEL ENHANCEMENT MODE M | Produkt ist nicht verfügbar | |||||||||||||||
PJX8803_R1_00001 | Panjit | MOSFET 20V P-Channel Enhancement Mode MOSFETESD Protected | auf Bestellung 3920 Stücke: Lieferzeit 14-28 Tag (e) |
| ||||||||||||||
PJX8805_R1_00001 | Panjit | MOSFET 30V P-Channel Enhancement Mode MOSFET-ESD Protected | Produkt ist nicht verfügbar | |||||||||||||||
PJX8805_R2_00001 | Panjit | MOSFET 30V P-Channel Enhancement Mode MOSFET-ESD Protected | Produkt ist nicht verfügbar | |||||||||||||||
PJX8806_R1_00001 | Panjit International Inc. | Description: MOSFET 2N-CH 20V 0.8A SOT563 Packaging: Tape & Reel (TR) Package / Case: SOT-563, SOT-666 Mounting Type: Surface Mount Configuration: 2 N-Channel (Dual) Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 350mW (Ta) Drain to Source Voltage (Vdss): 20V Current - Continuous Drain (Id) @ 25°C: 800mA (Ta) Input Capacitance (Ciss) (Max) @ Vds: 50pF @ 10V Rds On (Max) @ Id, Vgs: 400mOhm @ 500mA, 4.5V Gate Charge (Qg) (Max) @ Vgs: 0.92nC @ 4.5V Vgs(th) (Max) @ Id: 1V @ 250µA Supplier Device Package: SOT-563 | auf Bestellung 8000 Stücke: Lieferzeit 21-28 Tag (e) |
| ||||||||||||||
PJX8806_R1_00001 | Panjit International Inc. | Description: MOSFET 2N-CH 20V 0.8A SOT563 Packaging: Cut Tape (CT) Package / Case: SOT-563, SOT-666 Mounting Type: Surface Mount Configuration: 2 N-Channel (Dual) Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 350mW (Ta) Drain to Source Voltage (Vdss): 20V Current - Continuous Drain (Id) @ 25°C: 800mA (Ta) Input Capacitance (Ciss) (Max) @ Vds: 50pF @ 10V Rds On (Max) @ Id, Vgs: 400mOhm @ 500mA, 4.5V Gate Charge (Qg) (Max) @ Vgs: 0.92nC @ 4.5V Vgs(th) (Max) @ Id: 1V @ 250µA Supplier Device Package: SOT-563 | auf Bestellung 9145 Stücke: Lieferzeit 21-28 Tag (e) |
| ||||||||||||||
PJX8807_R1_00001 | Panjit International Inc. | Description: MOSFET 2P-CH 20V 0.5A SOT563 Packaging: Tape & Reel (TR) Package / Case: SOT-563, SOT-666 Mounting Type: Surface Mount Configuration: 2 P-Channel (Dual) Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 300mW (Ta) Drain to Source Voltage (Vdss): 20V Current - Continuous Drain (Id) @ 25°C: 500mA (Ta) Input Capacitance (Ciss) (Max) @ Vds: 38pF @ 10V Rds On (Max) @ Id, Vgs: 1.2Ohm @ 500mA, 4.5V Gate Charge (Qg) (Max) @ Vgs: 1.4nC @ 4.5V Vgs(th) (Max) @ Id: 1V @ 250µA Supplier Device Package: SOT-563 | auf Bestellung 8000 Stücke: Lieferzeit 21-28 Tag (e) |
| ||||||||||||||
PJX8807_R1_00001 | Panjit International Inc. | Description: MOSFET 2P-CH 20V 0.5A SOT563 Packaging: Cut Tape (CT) Package / Case: SOT-563, SOT-666 Mounting Type: Surface Mount Configuration: 2 P-Channel (Dual) Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 300mW (Ta) Drain to Source Voltage (Vdss): 20V Current - Continuous Drain (Id) @ 25°C: 500mA (Ta) Input Capacitance (Ciss) (Max) @ Vds: 38pF @ 10V Rds On (Max) @ Id, Vgs: 1.2Ohm @ 500mA, 4.5V Gate Charge (Qg) (Max) @ Vgs: 1.4nC @ 4.5V Vgs(th) (Max) @ Id: 1V @ 250µA Supplier Device Package: SOT-563 | auf Bestellung 8000 Stücke: Lieferzeit 21-28 Tag (e) |
| ||||||||||||||
PJX8808_R1_00001 | Panjit International Inc. | Description: 20V N-CHANNEL ENHANCEMENT MODE M Packaging: Cut Tape (CT) Package / Case: SOT-563, SOT-666 Mounting Type: Surface Mount Configuration: 2 N-Channel (Dual) Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 300mW (Ta) Drain to Source Voltage (Vdss): 20V Current - Continuous Drain (Id) @ 25°C: 500mA (Ta) Input Capacitance (Ciss) (Max) @ Vds: 67pF @ 10V Rds On (Max) @ Id, Vgs: 400mOhm @ 500mA, 4.5V Gate Charge (Qg) (Max) @ Vgs: 1.4nC @ 4.5V FET Feature: Logic Level Gate, 1.2V Drive Vgs(th) (Max) @ Id: 900mV @ 250µA Supplier Device Package: SOT-563 Part Status: Active | auf Bestellung 7090 Stücke: Lieferzeit 21-28 Tag (e) |
| ||||||||||||||
PJX8808_R1_00001 | Panjit International Inc. | Description: 20V N-CHANNEL ENHANCEMENT MODE M Packaging: Tape & Reel (TR) Package / Case: SOT-563, SOT-666 Mounting Type: Surface Mount Configuration: 2 N-Channel (Dual) Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 300mW (Ta) Drain to Source Voltage (Vdss): 20V Current - Continuous Drain (Id) @ 25°C: 500mA (Ta) Input Capacitance (Ciss) (Max) @ Vds: 67pF @ 10V Rds On (Max) @ Id, Vgs: 400mOhm @ 500mA, 4.5V Gate Charge (Qg) (Max) @ Vgs: 1.4nC @ 4.5V FET Feature: Logic Level Gate, 1.2V Drive Vgs(th) (Max) @ Id: 900mV @ 250µA Supplier Device Package: SOT-563 Part Status: Active | auf Bestellung 4000 Stücke: Lieferzeit 21-28 Tag (e) |
| ||||||||||||||
PJX8812_R1_00001 | Panjit | MOSFET /X12/TR/7"/HF/4K/SOT-563/MOS/SOT/NFET-30TEMN/NF30TE-QI03/PJ/// | Produkt ist nicht verfügbar | |||||||||||||||
PJX8812_R2_00001 | Panjit | MOSFET /X12/TR/13"/HF/10K/SOT-563/MOS/SOT/NFET-30TEMN/NF30TE-QI03/PJ/// | Produkt ist nicht verfügbar | |||||||||||||||
PJX8828_R1_00001 | Panjit International Inc. | Description: MOSFET 2N-CH 30V 0.3A SOT563 Packaging: Cut Tape (CT) Package / Case: SOT-563, SOT-666 Mounting Type: Surface Mount Configuration: 2 N-Channel (Dual) Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 300mW (Ta) Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 300mA (Ta) Input Capacitance (Ciss) (Max) @ Vds: 45pF @ 10V Rds On (Max) @ Id, Vgs: 1.2Ohm @ 300mA, 4.5V Gate Charge (Qg) (Max) @ Vgs: 0.9nC @ 4.5V Vgs(th) (Max) @ Id: 1V @ 250µA Supplier Device Package: SOT-563 | auf Bestellung 2446 Stücke: Lieferzeit 21-28 Tag (e) |
| ||||||||||||||
PJX8828_R1_00001 | Panjit International Inc. | Description: MOSFET 2N-CH 30V 0.3A SOT563 Packaging: Tape & Reel (TR) Package / Case: SOT-563, SOT-666 Mounting Type: Surface Mount Configuration: 2 N-Channel (Dual) Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 300mW (Ta) Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 300mA (Ta) Input Capacitance (Ciss) (Max) @ Vds: 45pF @ 10V Rds On (Max) @ Id, Vgs: 1.2Ohm @ 300mA, 4.5V Gate Charge (Qg) (Max) @ Vgs: 0.9nC @ 4.5V Vgs(th) (Max) @ Id: 1V @ 250µA Supplier Device Package: SOT-563 | Produkt ist nicht verfügbar | |||||||||||||||
PJX8838-R1-00001 | Panjit | MOSFET | Produkt ist nicht verfügbar | |||||||||||||||
PJX8838-R1-00002 | Panjit | MOSFET SOT-563/MOS/SOT/NFET-50TEMN | Produkt ist nicht verfügbar | |||||||||||||||
PJX8838-R2-00001 | Panjit | MOSFET | Produkt ist nicht verfügbar | |||||||||||||||
PJX8838_R1_00001 | Panjit | MOSFET 50V N-Channel Enhancement Mode MOSFETESD Protected | auf Bestellung 1895 Stücke: Lieferzeit 14-28 Tag (e) |
| ||||||||||||||
PJX8838_R1_00001 | Panjit International Inc. | Description: MOSFET 2N-CH 50V 0.36A SOT563 Packaging: Cut Tape (CT) Package / Case: SOT-563, SOT-666 Mounting Type: Surface Mount Configuration: 2 N-Channel (Dual) Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 300mW (Ta) Drain to Source Voltage (Vdss): 50V Current - Continuous Drain (Id) @ 25°C: 360mA (Ta) Input Capacitance (Ciss) (Max) @ Vds: 36pF @ 25V Rds On (Max) @ Id, Vgs: 1.45Ohm @ 500mA, 10V Gate Charge (Qg) (Max) @ Vgs: 0.95nC @ 4.5V Vgs(th) (Max) @ Id: 1V @ 250µA Supplier Device Package: SOT-563 | auf Bestellung 14435 Stücke: Lieferzeit 21-28 Tag (e) |
| ||||||||||||||
PJX8838_R1_00001 | Panjit International Inc. | Description: MOSFET 2N-CH 50V 0.36A SOT563 Packaging: Tape & Reel (TR) Package / Case: SOT-563, SOT-666 Mounting Type: Surface Mount Configuration: 2 N-Channel (Dual) Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 300mW (Ta) Drain to Source Voltage (Vdss): 50V Current - Continuous Drain (Id) @ 25°C: 360mA (Ta) Input Capacitance (Ciss) (Max) @ Vds: 36pF @ 25V Rds On (Max) @ Id, Vgs: 1.45Ohm @ 500mA, 10V Gate Charge (Qg) (Max) @ Vgs: 0.95nC @ 4.5V Vgs(th) (Max) @ Id: 1V @ 250µA Supplier Device Package: SOT-563 | auf Bestellung 12000 Stücke: Lieferzeit 21-28 Tag (e) |
| ||||||||||||||
PJX8838_R1_00002 | Panjit | MOSFET 50V N-Channel Enhancement Mode MOSFETESD Protected | auf Bestellung 7650 Stücke: Lieferzeit 14-28 Tag (e) |
| ||||||||||||||
PJX8838_R2_00001 | Panjit | MOSFET 50V N-Channel Enhancement Mode MOSFET-ESD Protected | Produkt ist nicht verfügbar | |||||||||||||||
PJX8839_R1_00001 | Panjit | MOSFET /X39/TR/7"/HF/4K/SOT-563/MOS/SOT/NFET-60TEMP/NF60TE-QI03/PJ/// | Produkt ist nicht verfügbar | |||||||||||||||
PJX8839_R2_00001 | Panjit | MOSFET 60V P-Channel Enhancement Mode MOSFET | Produkt ist nicht verfügbar | |||||||||||||||
PJX8872B_R1_00001 | Panjit | MOSFET 60V N-Channel Enhancement Mode MOSFET | Produkt ist nicht verfügbar | |||||||||||||||
PJX8872B_R1_00001 | Panjit International Inc. | Description: 60V N-CHANNEL ENHANCEMENT MODE M Packaging: Cut Tape (CT) Package / Case: SOT-563, SOT-666 Mounting Type: Surface Mount Configuration: 2 N-Channel (Dual) Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 300mW (Ta) Drain to Source Voltage (Vdss): 60V Current - Continuous Drain (Id) @ 25°C: 200mA (Ta) Input Capacitance (Ciss) (Max) @ Vds: 34pF @ 25V Rds On (Max) @ Id, Vgs: 3Ohm @ 600mA, 10V Gate Charge (Qg) (Max) @ Vgs: 0.82nC @ 4.5V Vgs(th) (Max) @ Id: 2.5V @ 250µA Supplier Device Package: SOT-563 | auf Bestellung 3950 Stücke: Lieferzeit 21-28 Tag (e) |
| ||||||||||||||
PJX8872B_R1_00001 | Panjit International Inc. | Description: 60V N-CHANNEL ENHANCEMENT MODE M Packaging: Tape & Reel (TR) Package / Case: SOT-563, SOT-666 Mounting Type: Surface Mount Configuration: 2 N-Channel (Dual) Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 300mW (Ta) Drain to Source Voltage (Vdss): 60V Current - Continuous Drain (Id) @ 25°C: 200mA (Ta) Input Capacitance (Ciss) (Max) @ Vds: 34pF @ 25V Rds On (Max) @ Id, Vgs: 3Ohm @ 600mA, 10V Gate Charge (Qg) (Max) @ Vgs: 0.82nC @ 4.5V Vgs(th) (Max) @ Id: 2.5V @ 250µA Supplier Device Package: SOT-563 | Produkt ist nicht verfügbar | |||||||||||||||
PJX8872B_R2_00001 | Panjit | MOSFET 60V N-Channel Enhancement Mode MOSFET | Produkt ist nicht verfügbar | |||||||||||||||
PJXL403212L3PT | Hammond Manufacturing | Electrical Enclosures NON MET WALLMT 40X32X12 | Produkt ist nicht verfügbar |