Produkte > PJX

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PJX-2 (25 Ft)Global IndustrialDescription: 25' INSTALLATION KIT FOR SPLIT S
Packaging: Box
Type: Installation Kit
Part Status: Active
auf Bestellung 22 Stücke:
Lieferzeit 21-28 Tag (e)
1+286.05 EUR
PJX138K-AU_R1_000A1Panjit International Inc.Description: 50V N-CHANNEL ENHANCEMENT MODE M
Produkt ist nicht verfügbar
PJX138K-AU_R1_000A1Panjit International Inc.Description: 50V N-CHANNEL ENHANCEMENT MODE M
Produkt ist nicht verfügbar
PJX138K_R1_00001PanJit SemiconductorCategory: Multi channel transistors
Description: Transistor: N-MOSFET x2; unipolar; 50V; 350mA; Idm: 1.2A; 223mW
Type of transistor: N-MOSFET x2
Polarisation: unipolar
Drain-source voltage: 50V
Drain current: 0.35A
Pulsed drain current: 1.2A
Power dissipation: 223mW
Case: SOT563
Gate-source voltage: ±20V
On-state resistance: 4.5Ω
Mounting: SMD
Gate charge: 1nC
Kind of package: reel; tape
Kind of channel: enhanced
auf Bestellung 4000 Stücke:
Lieferzeit 14-21 Tag (e)
365+0.2 EUR
620+ 0.12 EUR
690+ 0.1 EUR
830+ 0.087 EUR
875+ 0.082 EUR
4000+ 0.079 EUR
Mindestbestellmenge: 365
PJX138K_R1_00001Panjit International Inc.Description: 50V N-CHANNEL ENHANCEMENT MODE M
Produkt ist nicht verfügbar
PJX138K_R1_00001PanjitMOSFET 50V N-Channel Enhancement Mode MOSFETESD Protected
auf Bestellung 43614 Stücke:
Lieferzeit 14-28 Tag (e)
48+1.09 EUR
65+ 0.81 EUR
113+ 0.46 EUR
1000+ 0.23 EUR
4000+ 0.13 EUR
Mindestbestellmenge: 48
PJX138K_R1_00001PanJit SemiconductorCategory: Multi channel transistors
Description: Transistor: N-MOSFET x2; unipolar; 50V; 350mA; Idm: 1.2A; 223mW
Type of transistor: N-MOSFET x2
Polarisation: unipolar
Drain-source voltage: 50V
Drain current: 0.35A
Pulsed drain current: 1.2A
Power dissipation: 223mW
Case: SOT563
Gate-source voltage: ±20V
On-state resistance: 4.5Ω
Mounting: SMD
Gate charge: 1nC
Kind of package: reel; tape
Kind of channel: enhanced
Anzahl je Verpackung: 5 Stücke
auf Bestellung 4000 Stücke:
Lieferzeit 7-14 Tag (e)
365+0.2 EUR
620+ 0.12 EUR
690+ 0.1 EUR
830+ 0.087 EUR
875+ 0.082 EUR
4000+ 0.079 EUR
Mindestbestellmenge: 365
PJX138K_R1_00001Panjit International Inc.Description: 50V N-CHANNEL ENHANCEMENT MODE M
Produkt ist nicht verfügbar
PJX138K_S1_00001PanjitMOSFET /8KB/TRR/7"/HF/4K/SOT-563/MOS/SOT/NFET-50TEMN/NF50TE-QI01/PJ///
Produkt ist nicht verfügbar
PJX138L_R1_00001Panjit International Inc.Description: 60V N-CHANNEL ENHANCEMENT MODE M
Produkt ist nicht verfügbar
PJX138L_R1_00001Panjit International Inc.Description: 60V N-CHANNEL ENHANCEMENT MODE M
auf Bestellung 1180 Stücke:
Lieferzeit 21-28 Tag (e)
19+1.43 EUR
25+ 1.08 EUR
100+ 0.67 EUR
500+ 0.46 EUR
1000+ 0.35 EUR
Mindestbestellmenge: 19
PJX138L_R1_00002PanJit SemiconductorCategory: Multi channel transistors
Description: Transistor: N-MOSFET x2; unipolar; SOT563
Type of transistor: N-MOSFET x2
Polarisation: unipolar
Case: SOT563
Mounting: SMD
Kind of package: tape
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
PJX138L_R1_00002PanJit SemiconductorCategory: Multi channel transistors
Description: Transistor: N-MOSFET x2; unipolar; SOT563
Type of transistor: N-MOSFET x2
Polarisation: unipolar
Case: SOT563
Mounting: SMD
Kind of package: tape
Kind of channel: enhanced
Produkt ist nicht verfügbar
PJX8601_R1_00001Panjit International Inc.Description: COMPLEMENTARY ENHANCEMENT MODE M
Packaging: Cut Tape (CT)
Package / Case: SOT-563, SOT-666
Mounting Type: Surface Mount
Configuration: N and P-Channel Complementary
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 300mW (Ta)
Drain to Source Voltage (Vdss): 20V
Current - Continuous Drain (Id) @ 25°C: 500mA (Ta)
Input Capacitance (Ciss) (Max) @ Vds: 67pF @ 10V, 38pF @ 10V
Rds On (Max) @ Id, Vgs: 400mOhm @ 500mA, 4.5V, 1.2Ohm @ 500mA, 4.5V
Gate Charge (Qg) (Max) @ Vgs: 1.4nC @ 4.5V
Vgs(th) (Max) @ Id: 900mV @ 250µA, 1V @ 250µA
Supplier Device Package: SOT-563
auf Bestellung 4030 Stücke:
Lieferzeit 21-28 Tag (e)
28+0.94 EUR
37+ 0.72 EUR
100+ 0.43 EUR
500+ 0.4 EUR
1000+ 0.27 EUR
2000+ 0.25 EUR
Mindestbestellmenge: 28
PJX8601_R1_00001PanjitMOSFET Complementary Enhancement Mode MOSFETESD Protected
auf Bestellung 3968 Stücke:
Lieferzeit 14-28 Tag (e)
60+0.87 EUR
75+ 0.7 EUR
110+ 0.47 EUR
1000+ 0.28 EUR
4000+ 0.23 EUR
8000+ 0.21 EUR
24000+ 0.2 EUR
Mindestbestellmenge: 60
PJX8601_R1_00001Panjit International Inc.Description: COMPLEMENTARY ENHANCEMENT MODE M
Packaging: Tape & Reel (TR)
Package / Case: SOT-563, SOT-666
Mounting Type: Surface Mount
Configuration: N and P-Channel Complementary
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 300mW (Ta)
Drain to Source Voltage (Vdss): 20V
Current - Continuous Drain (Id) @ 25°C: 500mA (Ta)
Input Capacitance (Ciss) (Max) @ Vds: 67pF @ 10V, 38pF @ 10V
Rds On (Max) @ Id, Vgs: 400mOhm @ 500mA, 4.5V, 1.2Ohm @ 500mA, 4.5V
Gate Charge (Qg) (Max) @ Vgs: 1.4nC @ 4.5V
Vgs(th) (Max) @ Id: 900mV @ 250µA, 1V @ 250µA
Supplier Device Package: SOT-563
Produkt ist nicht verfügbar
PJX8603_R1_00001PanJit SemiconductorCategory: Multi channel transistors
Description: Transistor: N/P-MOSFET; unipolar; 50/-60V; 360/-200mA; 300mW
Type of transistor: N/P-MOSFET
Polarisation: unipolar
Drain-source voltage: 50/-60V
Drain current: 360/-200mA
Power dissipation: 0.3W
Case: SOT563
Gate-source voltage: ±20V
On-state resistance: 2.5/7Ω
Mounting: SMD
Gate charge: 0.95/1.1nC
Kind of package: reel; tape
Kind of channel: enhanced
auf Bestellung 3950 Stücke:
Lieferzeit 14-21 Tag (e)
360+0.2 EUR
545+ 0.13 EUR
605+ 0.12 EUR
725+ 0.099 EUR
770+ 0.093 EUR
Mindestbestellmenge: 360
PJX8603_R1_00001Panjit International Inc.Description: MOSFET N/P-CH 50V/60V SOT563
Packaging: Cut Tape (CT)
Package / Case: SOT-563, SOT-666
Mounting Type: Surface Mount
Configuration: N and P-Channel Complementary
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 300mW (Ta)
Drain to Source Voltage (Vdss): 50V, 60V
Current - Continuous Drain (Id) @ 25°C: 360mA (Ta), 200mA (Ta)
Input Capacitance (Ciss) (Max) @ Vds: 36pF @ 25V, 51pF @ 25V
Rds On (Max) @ Id, Vgs: 1.5Ohm @ 500mA, 10V, 6Ohm @ 500mA, 10V
Gate Charge (Qg) (Max) @ Vgs: 0.95nC @ 4.5V, 1.1nC @ 4.5V
Vgs(th) (Max) @ Id: 1V @ 250µA, 2.5V @ 250µA
Supplier Device Package: SOT-563
auf Bestellung 6880 Stücke:
Lieferzeit 21-28 Tag (e)
28+0.94 EUR
36+ 0.73 EUR
100+ 0.44 EUR
500+ 0.41 EUR
1000+ 0.28 EUR
2000+ 0.25 EUR
Mindestbestellmenge: 28
PJX8603_R1_00001Panjit International Inc.Description: MOSFET N/P-CH 50V/60V SOT563
Packaging: Tape & Reel (TR)
Package / Case: SOT-563, SOT-666
Mounting Type: Surface Mount
Configuration: N and P-Channel Complementary
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 300mW (Ta)
Drain to Source Voltage (Vdss): 50V, 60V
Current - Continuous Drain (Id) @ 25°C: 360mA (Ta), 200mA (Ta)
Input Capacitance (Ciss) (Max) @ Vds: 36pF @ 25V, 51pF @ 25V
Rds On (Max) @ Id, Vgs: 1.5Ohm @ 500mA, 10V, 6Ohm @ 500mA, 10V
Gate Charge (Qg) (Max) @ Vgs: 0.95nC @ 4.5V, 1.1nC @ 4.5V
Vgs(th) (Max) @ Id: 1V @ 250µA, 2.5V @ 250µA
Supplier Device Package: SOT-563
Produkt ist nicht verfügbar
PJX8603_R1_00001PanJit SemiconductorCategory: Multi channel transistors
Description: Transistor: N/P-MOSFET; unipolar; 50/-60V; 360/-200mA; 300mW
Type of transistor: N/P-MOSFET
Polarisation: unipolar
Drain-source voltage: 50/-60V
Drain current: 360/-200mA
Power dissipation: 0.3W
Case: SOT563
Gate-source voltage: ±20V
On-state resistance: 2.5/7Ω
Mounting: SMD
Gate charge: 0.95/1.1nC
Kind of package: reel; tape
Kind of channel: enhanced
Anzahl je Verpackung: 5 Stücke
auf Bestellung 3950 Stücke:
Lieferzeit 7-14 Tag (e)
360+0.2 EUR
545+ 0.13 EUR
605+ 0.12 EUR
725+ 0.099 EUR
770+ 0.093 EUR
4000+ 0.089 EUR
Mindestbestellmenge: 360
PJX8603_R1_00001PanjitMOSFET Complementary Enhancement Mode MOSFETESD Protected
auf Bestellung 6945 Stücke:
Lieferzeit 14-28 Tag (e)
56+0.94 EUR
68+ 0.77 EUR
100+ 0.53 EUR
1000+ 0.3 EUR
4000+ 0.26 EUR
8000+ 0.23 EUR
24000+ 0.22 EUR
Mindestbestellmenge: 56
PJX8802_R1_00001Panjit International Inc.Description: 20V N-CHANNEL ENHANCEMENT MODE M
Produkt ist nicht verfügbar
PJX8802_R1_00001Panjit International Inc.Description: 20V N-CHANNEL ENHANCEMENT MODE M
Produkt ist nicht verfügbar
PJX8803_R1_00001PanjitMOSFET 20V P-Channel Enhancement Mode MOSFETESD Protected
auf Bestellung 3920 Stücke:
Lieferzeit 14-28 Tag (e)
54+0.97 EUR
67+ 0.79 EUR
100+ 0.54 EUR
1000+ 0.31 EUR
4000+ 0.26 EUR
8000+ 0.24 EUR
24000+ 0.22 EUR
Mindestbestellmenge: 54
PJX8805_R1_00001PanjitMOSFET 30V P-Channel Enhancement Mode MOSFET-ESD Protected
Produkt ist nicht verfügbar
PJX8805_R2_00001PanjitMOSFET 30V P-Channel Enhancement Mode MOSFET-ESD Protected
Produkt ist nicht verfügbar
PJX8806_R1_00001Panjit International Inc.Description: MOSFET 2N-CH 20V 0.8A SOT563
Packaging: Tape & Reel (TR)
Package / Case: SOT-563, SOT-666
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 350mW (Ta)
Drain to Source Voltage (Vdss): 20V
Current - Continuous Drain (Id) @ 25°C: 800mA (Ta)
Input Capacitance (Ciss) (Max) @ Vds: 50pF @ 10V
Rds On (Max) @ Id, Vgs: 400mOhm @ 500mA, 4.5V
Gate Charge (Qg) (Max) @ Vgs: 0.92nC @ 4.5V
Vgs(th) (Max) @ Id: 1V @ 250µA
Supplier Device Package: SOT-563
auf Bestellung 8000 Stücke:
Lieferzeit 21-28 Tag (e)
4000+0.27 EUR
8000+ 0.26 EUR
Mindestbestellmenge: 4000
PJX8806_R1_00001Panjit International Inc.Description: MOSFET 2N-CH 20V 0.8A SOT563
Packaging: Cut Tape (CT)
Package / Case: SOT-563, SOT-666
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 350mW (Ta)
Drain to Source Voltage (Vdss): 20V
Current - Continuous Drain (Id) @ 25°C: 800mA (Ta)
Input Capacitance (Ciss) (Max) @ Vds: 50pF @ 10V
Rds On (Max) @ Id, Vgs: 400mOhm @ 500mA, 4.5V
Gate Charge (Qg) (Max) @ Vgs: 0.92nC @ 4.5V
Vgs(th) (Max) @ Id: 1V @ 250µA
Supplier Device Package: SOT-563
auf Bestellung 9145 Stücke:
Lieferzeit 21-28 Tag (e)
27+0.99 EUR
34+ 0.77 EUR
100+ 0.46 EUR
500+ 0.43 EUR
1000+ 0.29 EUR
2000+ 0.27 EUR
Mindestbestellmenge: 27
PJX8807_R1_00001Panjit International Inc.Description: MOSFET 2P-CH 20V 0.5A SOT563
Packaging: Tape & Reel (TR)
Package / Case: SOT-563, SOT-666
Mounting Type: Surface Mount
Configuration: 2 P-Channel (Dual)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 300mW (Ta)
Drain to Source Voltage (Vdss): 20V
Current - Continuous Drain (Id) @ 25°C: 500mA (Ta)
Input Capacitance (Ciss) (Max) @ Vds: 38pF @ 10V
Rds On (Max) @ Id, Vgs: 1.2Ohm @ 500mA, 4.5V
Gate Charge (Qg) (Max) @ Vgs: 1.4nC @ 4.5V
Vgs(th) (Max) @ Id: 1V @ 250µA
Supplier Device Package: SOT-563
auf Bestellung 8000 Stücke:
Lieferzeit 21-28 Tag (e)
4000+0.26 EUR
Mindestbestellmenge: 4000
PJX8807_R1_00001Panjit International Inc.Description: MOSFET 2P-CH 20V 0.5A SOT563
Packaging: Cut Tape (CT)
Package / Case: SOT-563, SOT-666
Mounting Type: Surface Mount
Configuration: 2 P-Channel (Dual)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 300mW (Ta)
Drain to Source Voltage (Vdss): 20V
Current - Continuous Drain (Id) @ 25°C: 500mA (Ta)
Input Capacitance (Ciss) (Max) @ Vds: 38pF @ 10V
Rds On (Max) @ Id, Vgs: 1.2Ohm @ 500mA, 4.5V
Gate Charge (Qg) (Max) @ Vgs: 1.4nC @ 4.5V
Vgs(th) (Max) @ Id: 1V @ 250µA
Supplier Device Package: SOT-563
auf Bestellung 8000 Stücke:
Lieferzeit 21-28 Tag (e)
22+1.2 EUR
31+ 0.85 EUR
100+ 0.43 EUR
500+ 0.38 EUR
1000+ 0.3 EUR
2000+ 0.26 EUR
Mindestbestellmenge: 22
PJX8808_R1_00001Panjit International Inc.Description: 20V N-CHANNEL ENHANCEMENT MODE M
Packaging: Cut Tape (CT)
Package / Case: SOT-563, SOT-666
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 300mW (Ta)
Drain to Source Voltage (Vdss): 20V
Current - Continuous Drain (Id) @ 25°C: 500mA (Ta)
Input Capacitance (Ciss) (Max) @ Vds: 67pF @ 10V
Rds On (Max) @ Id, Vgs: 400mOhm @ 500mA, 4.5V
Gate Charge (Qg) (Max) @ Vgs: 1.4nC @ 4.5V
FET Feature: Logic Level Gate, 1.2V Drive
Vgs(th) (Max) @ Id: 900mV @ 250µA
Supplier Device Package: SOT-563
Part Status: Active
auf Bestellung 7090 Stücke:
Lieferzeit 21-28 Tag (e)
24+1.09 EUR
30+ 0.88 EUR
100+ 0.6 EUR
500+ 0.45 EUR
1000+ 0.34 EUR
2000+ 0.31 EUR
Mindestbestellmenge: 24
PJX8808_R1_00001Panjit International Inc.Description: 20V N-CHANNEL ENHANCEMENT MODE M
Packaging: Tape & Reel (TR)
Package / Case: SOT-563, SOT-666
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 300mW (Ta)
Drain to Source Voltage (Vdss): 20V
Current - Continuous Drain (Id) @ 25°C: 500mA (Ta)
Input Capacitance (Ciss) (Max) @ Vds: 67pF @ 10V
Rds On (Max) @ Id, Vgs: 400mOhm @ 500mA, 4.5V
Gate Charge (Qg) (Max) @ Vgs: 1.4nC @ 4.5V
FET Feature: Logic Level Gate, 1.2V Drive
Vgs(th) (Max) @ Id: 900mV @ 250µA
Supplier Device Package: SOT-563
Part Status: Active
auf Bestellung 4000 Stücke:
Lieferzeit 21-28 Tag (e)
4000+0.31 EUR
Mindestbestellmenge: 4000
PJX8812_R1_00001PanjitMOSFET /X12/TR/7"/HF/4K/SOT-563/MOS/SOT/NFET-30TEMN/NF30TE-QI03/PJ///
Produkt ist nicht verfügbar
PJX8812_R2_00001PanjitMOSFET /X12/TR/13"/HF/10K/SOT-563/MOS/SOT/NFET-30TEMN/NF30TE-QI03/PJ///
Produkt ist nicht verfügbar
PJX8828_R1_00001Panjit International Inc.Description: MOSFET 2N-CH 30V 0.3A SOT563
Packaging: Cut Tape (CT)
Package / Case: SOT-563, SOT-666
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 300mW (Ta)
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 300mA (Ta)
Input Capacitance (Ciss) (Max) @ Vds: 45pF @ 10V
Rds On (Max) @ Id, Vgs: 1.2Ohm @ 300mA, 4.5V
Gate Charge (Qg) (Max) @ Vgs: 0.9nC @ 4.5V
Vgs(th) (Max) @ Id: 1V @ 250µA
Supplier Device Package: SOT-563
auf Bestellung 2446 Stücke:
Lieferzeit 21-28 Tag (e)
29+0.91 EUR
40+ 0.65 EUR
100+ 0.33 EUR
500+ 0.29 EUR
1000+ 0.23 EUR
2000+ 0.2 EUR
Mindestbestellmenge: 29
PJX8828_R1_00001Panjit International Inc.Description: MOSFET 2N-CH 30V 0.3A SOT563
Packaging: Tape & Reel (TR)
Package / Case: SOT-563, SOT-666
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 300mW (Ta)
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 300mA (Ta)
Input Capacitance (Ciss) (Max) @ Vds: 45pF @ 10V
Rds On (Max) @ Id, Vgs: 1.2Ohm @ 300mA, 4.5V
Gate Charge (Qg) (Max) @ Vgs: 0.9nC @ 4.5V
Vgs(th) (Max) @ Id: 1V @ 250µA
Supplier Device Package: SOT-563
Produkt ist nicht verfügbar
PJX8838-R1-00001PanjitMOSFET
Produkt ist nicht verfügbar
PJX8838-R1-00002PanjitMOSFET SOT-563/MOS/SOT/NFET-50TEMN
Produkt ist nicht verfügbar
PJX8838-R2-00001PanjitMOSFET
Produkt ist nicht verfügbar
PJX8838_R1_00001PanjitMOSFET 50V N-Channel Enhancement Mode MOSFETESD Protected
auf Bestellung 1895 Stücke:
Lieferzeit 14-28 Tag (e)
50+1.04 EUR
67+ 0.78 EUR
107+ 0.49 EUR
1000+ 0.26 EUR
4000+ 0.23 EUR
8000+ 0.2 EUR
24000+ 0.18 EUR
Mindestbestellmenge: 50
PJX8838_R1_00001Panjit International Inc.Description: MOSFET 2N-CH 50V 0.36A SOT563
Packaging: Cut Tape (CT)
Package / Case: SOT-563, SOT-666
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 300mW (Ta)
Drain to Source Voltage (Vdss): 50V
Current - Continuous Drain (Id) @ 25°C: 360mA (Ta)
Input Capacitance (Ciss) (Max) @ Vds: 36pF @ 25V
Rds On (Max) @ Id, Vgs: 1.45Ohm @ 500mA, 10V
Gate Charge (Qg) (Max) @ Vgs: 0.95nC @ 4.5V
Vgs(th) (Max) @ Id: 1V @ 250µA
Supplier Device Package: SOT-563
auf Bestellung 14435 Stücke:
Lieferzeit 21-28 Tag (e)
25+1.07 EUR
35+ 0.75 EUR
100+ 0.38 EUR
500+ 0.33 EUR
1000+ 0.26 EUR
2000+ 0.23 EUR
Mindestbestellmenge: 25
PJX8838_R1_00001Panjit International Inc.Description: MOSFET 2N-CH 50V 0.36A SOT563
Packaging: Tape & Reel (TR)
Package / Case: SOT-563, SOT-666
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 300mW (Ta)
Drain to Source Voltage (Vdss): 50V
Current - Continuous Drain (Id) @ 25°C: 360mA (Ta)
Input Capacitance (Ciss) (Max) @ Vds: 36pF @ 25V
Rds On (Max) @ Id, Vgs: 1.45Ohm @ 500mA, 10V
Gate Charge (Qg) (Max) @ Vgs: 0.95nC @ 4.5V
Vgs(th) (Max) @ Id: 1V @ 250µA
Supplier Device Package: SOT-563
auf Bestellung 12000 Stücke:
Lieferzeit 21-28 Tag (e)
4000+0.23 EUR
12000+ 0.2 EUR
Mindestbestellmenge: 4000
PJX8838_R1_00002PanjitMOSFET 50V N-Channel Enhancement Mode MOSFETESD Protected
auf Bestellung 7650 Stücke:
Lieferzeit 14-28 Tag (e)
50+1.04 EUR
67+ 0.78 EUR
107+ 0.49 EUR
1000+ 0.26 EUR
2500+ 0.23 EUR
8000+ 0.17 EUR
Mindestbestellmenge: 50
PJX8838_R2_00001PanjitMOSFET 50V N-Channel Enhancement Mode MOSFET-ESD Protected
Produkt ist nicht verfügbar
PJX8839_R1_00001PanjitMOSFET /X39/TR/7"/HF/4K/SOT-563/MOS/SOT/NFET-60TEMP/NF60TE-QI03/PJ///
Produkt ist nicht verfügbar
PJX8839_R2_00001PanjitMOSFET 60V P-Channel Enhancement Mode MOSFET
Produkt ist nicht verfügbar
PJX8872B_R1_00001PanjitMOSFET 60V N-Channel Enhancement Mode MOSFET
Produkt ist nicht verfügbar
PJX8872B_R1_00001Panjit International Inc.Description: 60V N-CHANNEL ENHANCEMENT MODE M
Packaging: Cut Tape (CT)
Package / Case: SOT-563, SOT-666
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 300mW (Ta)
Drain to Source Voltage (Vdss): 60V
Current - Continuous Drain (Id) @ 25°C: 200mA (Ta)
Input Capacitance (Ciss) (Max) @ Vds: 34pF @ 25V
Rds On (Max) @ Id, Vgs: 3Ohm @ 600mA, 10V
Gate Charge (Qg) (Max) @ Vgs: 0.82nC @ 4.5V
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: SOT-563
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PJX8872B_R1_00001Panjit International Inc.Description: 60V N-CHANNEL ENHANCEMENT MODE M
Packaging: Tape & Reel (TR)
Package / Case: SOT-563, SOT-666
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 300mW (Ta)
Drain to Source Voltage (Vdss): 60V
Current - Continuous Drain (Id) @ 25°C: 200mA (Ta)
Input Capacitance (Ciss) (Max) @ Vds: 34pF @ 25V
Rds On (Max) @ Id, Vgs: 3Ohm @ 600mA, 10V
Gate Charge (Qg) (Max) @ Vgs: 0.82nC @ 4.5V
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: SOT-563
Produkt ist nicht verfügbar
PJX8872B_R2_00001PanjitMOSFET 60V N-Channel Enhancement Mode MOSFET
Produkt ist nicht verfügbar
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