Produkte > PJX

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PJX-2 (25 Ft)Global IndustrialDescription: 25' INSTALLATION KIT FOR SPLIT S
Packaging: Box
Type: Installation Kit
Part Status: Active
auf Bestellung 22 Stücke:
Lieferzeit 10-14 Tag (e)
1+193.64 EUR
Im Einkaufswagen  Stück im Wert von  UAH
PJX138K-AU-R1-000A1PanjitMOSFETs SOT563 N CHAN 50V
Produkt ist nicht verfügbar
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PJX138K-AU_R1_000A1Panjit International Inc.Description: 50V N-CHANNEL ENHANCEMENT MODE M
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PJX138K-AU_R1_000A1PanjitMOSFETs 50V N-Channel Enhancement Mode MOSFETESD Protected
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PJX138K-AU_R1_000A1Panjit International Inc.Description: 50V N-CHANNEL ENHANCEMENT MODE M
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
PJX138K-R1-00001PanjitMOSFETs SOT563 N CHAN 50V
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
PJX138K-S1-00001PanjitMOSFETs
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
PJX138K_R1_00001Panjit International Inc.Description: 50V N-CHANNEL ENHANCEMENT MODE M
Produkt ist nicht verfügbar
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PJX138K_R1_00001PanjitMOSFETs 50V N-Channel Enhancement Mode MOSFETESD Protected
auf Bestellung 37387 Stücke:
Lieferzeit 10-14 Tag (e)
7+0.45 EUR
10+0.31 EUR
100+0.16 EUR
1000+0.13 EUR
4000+0.09 EUR
Mindestbestellmenge: 7
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PJX138K_R1_00001Panjit International Inc.Description: 50V N-CHANNEL ENHANCEMENT MODE M
Produkt ist nicht verfügbar
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PJX138K_R1_00001PanJit SemiconductorPJX138K-R1 Multi channel transistors
auf Bestellung 3985 Stücke:
Lieferzeit 7-14 Tag (e)
343+0.21 EUR
824+0.09 EUR
872+0.08 EUR
4000+0.08 EUR
Mindestbestellmenge: 343
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PJX138K_R1_00002PanjitMOSFETs 50V N-Channel Enhancement Mode MOSFET-ESD Protected
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PJX138K_R2_00001PanjitMOSFETs 50V N-Channel Enhancement Mode MOSFET-ESD Protected
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PJX138K_S1_00001PanjitMOSFETs 50V N-Channel Enhancement Mode MOSFET-ESD Protected
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PJX138L-R1-00001PanjitMOSFETs SOT563 N CHAN 60V
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Im Einkaufswagen  Stück im Wert von  UAH
PJX138L-R2-00001PanjitMOSFETs
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PJX138L_R1_00001Panjit International Inc.Description: 60V N-CHANNEL ENHANCEMENT MODE M
auf Bestellung 1180 Stücke:
Lieferzeit 10-14 Tag (e)
19+0.97 EUR
25+0.73 EUR
100+0.46 EUR
500+0.31 EUR
1000+0.24 EUR
Mindestbestellmenge: 19
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PJX138L_R1_00001Panjit International Inc.Description: 60V N-CHANNEL ENHANCEMENT MODE M
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PJX138L_R1_00001PanjitMOSFETs 60V N-Channel Enhancement Mode MOSFET
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PJX138L_R1_00002PanJit SemiconductorPJX138L-R1 Multi channel transistors
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PJX138L_R2_00001PanjitMOSFETs 60V N-Channel Enhancement Mode MOSFET
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PJX8601_R1_00001Panjit International Inc.Description: MOSFET N/P-CH 20V 0.5A SOT563
Packaging: Cut Tape (CT)
Package / Case: SOT-563, SOT-666
Mounting Type: Surface Mount
Configuration: N and P-Channel Complementary
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 300mW (Ta)
Drain to Source Voltage (Vdss): 20V
Current - Continuous Drain (Id) @ 25°C: 500mA (Ta)
Input Capacitance (Ciss) (Max) @ Vds: 67pF @ 10V, 38pF @ 10V
Rds On (Max) @ Id, Vgs: 400mOhm @ 500mA, 4.5V, 1.2Ohm @ 500mA, 4.5V
Gate Charge (Qg) (Max) @ Vgs: 1.4nC @ 4.5V
Vgs(th) (Max) @ Id: 900mV @ 250µA, 1V @ 250µA
Supplier Device Package: SOT-563
auf Bestellung 2895 Stücke:
Lieferzeit 10-14 Tag (e)
22+0.81 EUR
36+0.50 EUR
100+0.32 EUR
500+0.24 EUR
1000+0.21 EUR
2000+0.19 EUR
Mindestbestellmenge: 22
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PJX8601_R1_00001Panjit International Inc.Description: MOSFET N/P-CH 20V 0.5A SOT563
Packaging: Tape & Reel (TR)
Package / Case: SOT-563, SOT-666
Mounting Type: Surface Mount
Configuration: N and P-Channel Complementary
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 300mW (Ta)
Drain to Source Voltage (Vdss): 20V
Current - Continuous Drain (Id) @ 25°C: 500mA (Ta)
Input Capacitance (Ciss) (Max) @ Vds: 67pF @ 10V, 38pF @ 10V
Rds On (Max) @ Id, Vgs: 400mOhm @ 500mA, 4.5V, 1.2Ohm @ 500mA, 4.5V
Gate Charge (Qg) (Max) @ Vgs: 1.4nC @ 4.5V
Vgs(th) (Max) @ Id: 900mV @ 250µA, 1V @ 250µA
Supplier Device Package: SOT-563
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
PJX8601_R1_00001PanjitMOSFET Complementary Enhancement Mode MOSFETESD Protected
auf Bestellung 3968 Stücke:
Lieferzeit 10-14 Tag (e)
5+0.59 EUR
10+0.47 EUR
100+0.32 EUR
1000+0.19 EUR
4000+0.16 EUR
8000+0.14 EUR
24000+0.13 EUR
Mindestbestellmenge: 5
Im Einkaufswagen  Stück im Wert von  UAH
PJX8601_R2_00001PanjitMOSFETs Complementary Enhancement Mode MOSFET-ESD Protected
Produkt ist nicht verfügbar
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PJX8603_R1_00001Panjit International Inc.Description: MOSFET N/P-CH 50V/60V SOT563
Packaging: Tape & Reel (TR)
Package / Case: SOT-563, SOT-666
Mounting Type: Surface Mount
Configuration: N and P-Channel Complementary
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 300mW (Ta)
Drain to Source Voltage (Vdss): 50V, 60V
Current - Continuous Drain (Id) @ 25°C: 360mA (Ta), 200mA (Ta)
Input Capacitance (Ciss) (Max) @ Vds: 36pF @ 25V, 51pF @ 25V
Rds On (Max) @ Id, Vgs: 1.5Ohm @ 500mA, 10V, 6Ohm @ 500mA, 10V
Gate Charge (Qg) (Max) @ Vgs: 0.95nC @ 4.5V, 1.1nC @ 4.5V
Vgs(th) (Max) @ Id: 1V @ 250µA, 2.5V @ 250µA
Supplier Device Package: SOT-563
auf Bestellung 8000 Stücke:
Lieferzeit 10-14 Tag (e)
4000+0.16 EUR
Mindestbestellmenge: 4000
Im Einkaufswagen  Stück im Wert von  UAH
PJX8603_R1_00001PanJit SemiconductorCategory: Multi channel transistors
Description: Transistor: N/P-MOSFET; unipolar; 50/-60V; 360/-200mA; 300mW
Type of transistor: N/P-MOSFET
Polarisation: unipolar
Drain-source voltage: 50/-60V
Drain current: 360/-200mA
Power dissipation: 0.3W
Case: SOT563
Gate-source voltage: ±20V
On-state resistance: 2.5/7Ω
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
Gate charge: 0.95/1.1nC
Anzahl je Verpackung: 1 Stücke
auf Bestellung 2817 Stücke:
Lieferzeit 7-14 Tag (e)
264+0.27 EUR
410+0.17 EUR
575+0.12 EUR
725+0.10 EUR
770+0.09 EUR
Mindestbestellmenge: 264
Im Einkaufswagen  Stück im Wert von  UAH
PJX8603_R1_00001PanjitMOSFETs Complementary Enhancement Mode MOSFETESD Protected
auf Bestellung 6945 Stücke:
Lieferzeit 10-14 Tag (e)
4+0.74 EUR
10+0.53 EUR
100+0.26 EUR
1000+0.21 EUR
4000+0.18 EUR
8000+0.15 EUR
24000+0.14 EUR
Mindestbestellmenge: 4
Im Einkaufswagen  Stück im Wert von  UAH
PJX8603_R1_00001Panjit International Inc.Description: MOSFET N/P-CH 50V/60V SOT563
Packaging: Cut Tape (CT)
Package / Case: SOT-563, SOT-666
Mounting Type: Surface Mount
Configuration: N and P-Channel Complementary
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 300mW (Ta)
Drain to Source Voltage (Vdss): 50V, 60V
Current - Continuous Drain (Id) @ 25°C: 360mA (Ta), 200mA (Ta)
Input Capacitance (Ciss) (Max) @ Vds: 36pF @ 25V, 51pF @ 25V
Rds On (Max) @ Id, Vgs: 1.5Ohm @ 500mA, 10V, 6Ohm @ 500mA, 10V
Gate Charge (Qg) (Max) @ Vgs: 0.95nC @ 4.5V, 1.1nC @ 4.5V
Vgs(th) (Max) @ Id: 1V @ 250µA, 2.5V @ 250µA
Supplier Device Package: SOT-563
auf Bestellung 15747 Stücke:
Lieferzeit 10-14 Tag (e)
20+0.90 EUR
32+0.55 EUR
100+0.35 EUR
500+0.26 EUR
1000+0.24 EUR
2000+0.21 EUR
Mindestbestellmenge: 20
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PJX8603_R1_00001PanJit SemiconductorCategory: Multi channel transistors
Description: Transistor: N/P-MOSFET; unipolar; 50/-60V; 360/-200mA; 300mW
Type of transistor: N/P-MOSFET
Polarisation: unipolar
Drain-source voltage: 50/-60V
Drain current: 360/-200mA
Power dissipation: 0.3W
Case: SOT563
Gate-source voltage: ±20V
On-state resistance: 2.5/7Ω
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
Gate charge: 0.95/1.1nC
auf Bestellung 2817 Stücke:
Lieferzeit 14-21 Tag (e)
264+0.27 EUR
410+0.17 EUR
575+0.12 EUR
725+0.10 EUR
770+0.09 EUR
Mindestbestellmenge: 264
Im Einkaufswagen  Stück im Wert von  UAH
PJX8603_R2_00001PanjitMOSFETs Complementary Enhancement Mode MOSFET-ESD Protected
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
PJX8802_R1_00001Panjit International Inc.Description: MOSFET 2N-CH 20V 0.7A SOT563
Packaging: Tape & Reel (TR)
Package / Case: SOT-563, SOT-666
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 300mW (Ta)
Drain to Source Voltage (Vdss): 20V
Current - Continuous Drain (Id) @ 25°C: 700mA (Ta)
Input Capacitance (Ciss) (Max) @ Vds: 92pF @ 10V
Rds On (Max) @ Id, Vgs: 150mOhm @ 700mA, 4.5V
Gate Charge (Qg) (Max) @ Vgs: 1.6nC @ 4.5V
Vgs(th) (Max) @ Id: 1V @ 250µA
Supplier Device Package: SOT-563
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
PJX8802_R1_00001Panjit International Inc.Description: MOSFET 2N-CH 20V 0.7A SOT563
Packaging: Cut Tape (CT)
Package / Case: SOT-563, SOT-666
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 300mW (Ta)
Drain to Source Voltage (Vdss): 20V
Current - Continuous Drain (Id) @ 25°C: 700mA (Ta)
Input Capacitance (Ciss) (Max) @ Vds: 92pF @ 10V
Rds On (Max) @ Id, Vgs: 150mOhm @ 700mA, 4.5V
Gate Charge (Qg) (Max) @ Vgs: 1.6nC @ 4.5V
Vgs(th) (Max) @ Id: 1V @ 250µA
Supplier Device Package: SOT-563
auf Bestellung 2669 Stücke:
Lieferzeit 10-14 Tag (e)
20+0.90 EUR
32+0.56 EUR
100+0.36 EUR
500+0.27 EUR
1000+0.24 EUR
2000+0.22 EUR
Mindestbestellmenge: 20
Im Einkaufswagen  Stück im Wert von  UAH
PJX8803_R1_00001Panjit International Inc.Description: MOSFET 2P-CH 20V 0.6A SOT563
Packaging: Cut Tape (CT)
Package / Case: SOT-563, SOT-666
Mounting Type: Surface Mount
Configuration: 2 P-Channel (Dual)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 300mW (Ta)
Drain to Source Voltage (Vdss): 20V
Current - Continuous Drain (Id) @ 25°C: 600mA (Ta)
Input Capacitance (Ciss) (Max) @ Vds: 151pF @ 10V
Rds On (Max) @ Id, Vgs: 340mOhm @ 600mA, 4.5V
Gate Charge (Qg) (Max) @ Vgs: 2.2nC @ 4.5V
Vgs(th) (Max) @ Id: 1V @ 250µA
Supplier Device Package: SOT-563
auf Bestellung 3325 Stücke:
Lieferzeit 10-14 Tag (e)
22+0.83 EUR
32+0.56 EUR
100+0.36 EUR
500+0.27 EUR
1000+0.24 EUR
2000+0.21 EUR
Mindestbestellmenge: 22
Im Einkaufswagen  Stück im Wert von  UAH
PJX8803_R1_00001PanjitMOSFETs 20V P-Channel Enhancement Mode MOSFETESD Protected
auf Bestellung 3920 Stücke:
Lieferzeit 10-14 Tag (e)
5+0.67 EUR
10+0.45 EUR
100+0.24 EUR
1000+0.19 EUR
4000+0.15 EUR
Mindestbestellmenge: 5
Im Einkaufswagen  Stück im Wert von  UAH
PJX8803_R1_00001Panjit International Inc.Description: MOSFET 2P-CH 20V 0.6A SOT563
Packaging: Tape & Reel (TR)
Package / Case: SOT-563, SOT-666
Mounting Type: Surface Mount
Configuration: 2 P-Channel (Dual)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 300mW (Ta)
Drain to Source Voltage (Vdss): 20V
Current - Continuous Drain (Id) @ 25°C: 600mA (Ta)
Input Capacitance (Ciss) (Max) @ Vds: 151pF @ 10V
Rds On (Max) @ Id, Vgs: 340mOhm @ 600mA, 4.5V
Gate Charge (Qg) (Max) @ Vgs: 2.2nC @ 4.5V
Vgs(th) (Max) @ Id: 1V @ 250µA
Supplier Device Package: SOT-563
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
PJX8804_R1_00001Panjit International Inc.Description: MOSFET 2N-CH 30V 0.6A SOT563
Packaging: Cut Tape (CT)
Package / Case: SOT-563, SOT-666
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 300mW (Ta)
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 600mA (Ta)
Input Capacitance (Ciss) (Max) @ Vds: 93pF @ 15V
Rds On (Max) @ Id, Vgs: 220mOhm @ 600mA, 4,5V
Gate Charge (Qg) (Max) @ Vgs: 1.5nC @ 4.5V
Vgs(th) (Max) @ Id: 1.3V @ 250µA
Supplier Device Package: SOT-563
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
PJX8804_R1_00001Panjit International Inc.Description: MOSFET 2N-CH 30V 0.6A SOT563
Packaging: Tape & Reel (TR)
Package / Case: SOT-563, SOT-666
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 300mW (Ta)
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 600mA (Ta)
Input Capacitance (Ciss) (Max) @ Vds: 93pF @ 15V
Rds On (Max) @ Id, Vgs: 220mOhm @ 600mA, 4,5V
Gate Charge (Qg) (Max) @ Vgs: 1.5nC @ 4.5V
Vgs(th) (Max) @ Id: 1.3V @ 250µA
Supplier Device Package: SOT-563
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
PJX8805_R1_00001Panjit International Inc.Description: MOSFET 2P-CH 30V 0.5A SOT563
Packaging: Cut Tape (CT)
Package / Case: SOT-563, SOT-666
Mounting Type: Surface Mount
Configuration: 2 P-Channel (Dual)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 300mW (Ta)
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 500mA (Ta)
Input Capacitance (Ciss) (Max) @ Vds: 137pF @ 15V
Rds On (Max) @ Id, Vgs: 390mOhm @ 500mA, 4.5V
Gate Charge (Qg) (Max) @ Vgs: 1.6nC @ 4.5V
Vgs(th) (Max) @ Id: 1.3V @ 250µA
Supplier Device Package: SOT-563
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
PJX8805_R1_00001Panjit International Inc.Description: MOSFET 2P-CH 30V 0.5A SOT563
Packaging: Tape & Reel (TR)
Package / Case: SOT-563, SOT-666
Mounting Type: Surface Mount
Configuration: 2 P-Channel (Dual)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 300mW (Ta)
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 500mA (Ta)
Input Capacitance (Ciss) (Max) @ Vds: 137pF @ 15V
Rds On (Max) @ Id, Vgs: 390mOhm @ 500mA, 4.5V
Gate Charge (Qg) (Max) @ Vgs: 1.6nC @ 4.5V
Vgs(th) (Max) @ Id: 1.3V @ 250µA
Supplier Device Package: SOT-563
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
PJX8805_R1_00001PanjitMOSFET 30V P-Channel Enhancement Mode MOSFET-ESD Protected
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
PJX8805_R2_00001PanjitMOSFET 30V P-Channel Enhancement Mode MOSFET-ESD Protected
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
PJX8806_R1_00001Panjit International Inc.Description: MOSFET 2N-CH 20V 0.8A SOT563
Packaging: Cut Tape (CT)
Package / Case: SOT-563, SOT-666
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 350mW (Ta)
Drain to Source Voltage (Vdss): 20V
Current - Continuous Drain (Id) @ 25°C: 800mA (Ta)
Input Capacitance (Ciss) (Max) @ Vds: 50pF @ 10V
Rds On (Max) @ Id, Vgs: 400mOhm @ 500mA, 4.5V
Gate Charge (Qg) (Max) @ Vgs: 0.92nC @ 4.5V
Vgs(th) (Max) @ Id: 1V @ 250µA
Supplier Device Package: SOT-563
auf Bestellung 9145 Stücke:
Lieferzeit 10-14 Tag (e)
20+0.90 EUR
32+0.56 EUR
100+0.36 EUR
500+0.27 EUR
1000+0.24 EUR
2000+0.22 EUR
Mindestbestellmenge: 20
Im Einkaufswagen  Stück im Wert von  UAH
PJX8806_R1_00001Panjit International Inc.Description: MOSFET 2N-CH 20V 0.8A SOT563
Packaging: Tape & Reel (TR)
Package / Case: SOT-563, SOT-666
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 350mW (Ta)
Drain to Source Voltage (Vdss): 20V
Current - Continuous Drain (Id) @ 25°C: 800mA (Ta)
Input Capacitance (Ciss) (Max) @ Vds: 50pF @ 10V
Rds On (Max) @ Id, Vgs: 400mOhm @ 500mA, 4.5V
Gate Charge (Qg) (Max) @ Vgs: 0.92nC @ 4.5V
Vgs(th) (Max) @ Id: 1V @ 250µA
Supplier Device Package: SOT-563
auf Bestellung 8000 Stücke:
Lieferzeit 10-14 Tag (e)
4000+0.20 EUR
8000+0.18 EUR
Mindestbestellmenge: 4000
Im Einkaufswagen  Stück im Wert von  UAH
PJX8807_R1_00001Panjit International Inc.Description: MOSFET 2P-CH 20V 0.5A SOT563
Packaging: Tape & Reel (TR)
Package / Case: SOT-563, SOT-666
Mounting Type: Surface Mount
Configuration: 2 P-Channel (Dual)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 300mW (Ta)
Drain to Source Voltage (Vdss): 20V
Current - Continuous Drain (Id) @ 25°C: 500mA (Ta)
Input Capacitance (Ciss) (Max) @ Vds: 38pF @ 10V
Rds On (Max) @ Id, Vgs: 1.2Ohm @ 500mA, 4.5V
Gate Charge (Qg) (Max) @ Vgs: 1.4nC @ 4.5V
Vgs(th) (Max) @ Id: 1V @ 250µA
Supplier Device Package: SOT-563
auf Bestellung 8000 Stücke:
Lieferzeit 10-14 Tag (e)
4000+0.18 EUR
8000+0.16 EUR
Mindestbestellmenge: 4000
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PJX8807_R1_00001Panjit International Inc.Description: MOSFET 2P-CH 20V 0.5A SOT563
Packaging: Cut Tape (CT)
Package / Case: SOT-563, SOT-666
Mounting Type: Surface Mount
Configuration: 2 P-Channel (Dual)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 300mW (Ta)
Drain to Source Voltage (Vdss): 20V
Current - Continuous Drain (Id) @ 25°C: 500mA (Ta)
Input Capacitance (Ciss) (Max) @ Vds: 38pF @ 10V
Rds On (Max) @ Id, Vgs: 1.2Ohm @ 500mA, 4.5V
Gate Charge (Qg) (Max) @ Vgs: 1.4nC @ 4.5V
Vgs(th) (Max) @ Id: 1V @ 250µA
Supplier Device Package: SOT-563
auf Bestellung 8000 Stücke:
Lieferzeit 10-14 Tag (e)
22+0.83 EUR
Mindestbestellmenge: 22
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PJX8808_R1_00001Panjit International Inc.Description: MOSFET 2N-CH 20V 0.5A SOT563
Packaging: Tape & Reel (TR)
Package / Case: SOT-563, SOT-666
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 300mW (Ta)
Drain to Source Voltage (Vdss): 20V
Current - Continuous Drain (Id) @ 25°C: 500mA (Ta)
Input Capacitance (Ciss) (Max) @ Vds: 67pF @ 10V
Rds On (Max) @ Id, Vgs: 400mOhm @ 500mA, 4.5V
Gate Charge (Qg) (Max) @ Vgs: 1.4nC @ 4.5V
FET Feature: Logic Level Gate, 1.2V Drive
Vgs(th) (Max) @ Id: 900mV @ 250µA
Supplier Device Package: SOT-563
Part Status: Active
Produkt ist nicht verfügbar
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PJX8808_R1_00001Panjit International Inc.Description: MOSFET 2N-CH 20V 0.5A SOT563
Packaging: Cut Tape (CT)
Package / Case: SOT-563, SOT-666
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 300mW (Ta)
Drain to Source Voltage (Vdss): 20V
Current - Continuous Drain (Id) @ 25°C: 500mA (Ta)
Input Capacitance (Ciss) (Max) @ Vds: 67pF @ 10V
Rds On (Max) @ Id, Vgs: 400mOhm @ 500mA, 4.5V
Gate Charge (Qg) (Max) @ Vgs: 1.4nC @ 4.5V
FET Feature: Logic Level Gate, 1.2V Drive
Vgs(th) (Max) @ Id: 900mV @ 250µA
Supplier Device Package: SOT-563
Part Status: Active
auf Bestellung 3384 Stücke:
Lieferzeit 10-14 Tag (e)
20+0.90 EUR
32+0.56 EUR
100+0.36 EUR
500+0.27 EUR
1000+0.24 EUR
2000+0.22 EUR
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PJX8812_R1_00001PanjitMOSFET /X12/TR/7"/HF/4K/SOT-563/MOS/SOT/NFET-30TEMN/NF30TE-QI03/PJ///
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PJX8812_R1_00001Panjit International Inc.Description: MOSFET 2N-CH 30V 0.35A SOT563
Packaging: Cut Tape (CT)
Package / Case: SOT-563, SOT-666
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 300mW (Ta)
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 350mA (Ta)
Input Capacitance (Ciss) (Max) @ Vds: 34pF @ 15V
Rds On (Max) @ Id, Vgs: 1.2Ohm @ 350mA, 4.5V
Gate Charge (Qg) (Max) @ Vgs: 0.87nC @ 4.5V
Vgs(th) (Max) @ Id: 1.1V @ 250µA
Supplier Device Package: SOT-563
Produkt ist nicht verfügbar
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PJX8812_R1_00001Panjit International Inc.Description: MOSFET 2N-CH 30V 0.35A SOT563
Packaging: Tape & Reel (TR)
Package / Case: SOT-563, SOT-666
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 300mW (Ta)
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 350mA (Ta)
Input Capacitance (Ciss) (Max) @ Vds: 34pF @ 15V
Rds On (Max) @ Id, Vgs: 1.2Ohm @ 350mA, 4.5V
Gate Charge (Qg) (Max) @ Vgs: 0.87nC @ 4.5V
Vgs(th) (Max) @ Id: 1.1V @ 250µA
Supplier Device Package: SOT-563
Produkt ist nicht verfügbar
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PJX8812_R2_00001PanjitMOSFET /X12/TR/13"/HF/10K/SOT-563/MOS/SOT/NFET-30TEMN/NF30TE-QI03/PJ///
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PJX8828-AU_R1_000A1Panjit International Inc.Description: 30V DUAL N-CHANNEL ENHANCEMENT M
Packaging: Cut Tape (CT)
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PJX8828-AU_R1_000A1Panjit International Inc.Description: 30V DUAL N-CHANNEL ENHANCEMENT M
Packaging: Tape & Reel (TR)
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PJX8828-R1-00001PanjitMOSFET SOT-563/MOS/SOT/NFET-30TEMN
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PJX8828_R1_00001Panjit International Inc.Description: MOSFET 2N-CH 30V 0.3A SOT563
Packaging: Cut Tape (CT)
Package / Case: SOT-563, SOT-666
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 300mW (Ta)
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 300mA (Ta)
Input Capacitance (Ciss) (Max) @ Vds: 45pF @ 10V
Rds On (Max) @ Id, Vgs: 1.2Ohm @ 300mA, 4.5V
Gate Charge (Qg) (Max) @ Vgs: 0.9nC @ 4.5V
Vgs(th) (Max) @ Id: 1V @ 250µA
Supplier Device Package: SOT-563
auf Bestellung 1996 Stücke:
Lieferzeit 10-14 Tag (e)
25+0.70 EUR
42+0.43 EUR
100+0.27 EUR
500+0.20 EUR
1000+0.18 EUR
Mindestbestellmenge: 25
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PJX8828_R1_00001Panjit International Inc.Description: MOSFET 2N-CH 30V 0.3A SOT563
Packaging: Tape & Reel (TR)
Package / Case: SOT-563, SOT-666
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 300mW (Ta)
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 300mA (Ta)
Input Capacitance (Ciss) (Max) @ Vds: 45pF @ 10V
Rds On (Max) @ Id, Vgs: 1.2Ohm @ 300mA, 4.5V
Gate Charge (Qg) (Max) @ Vgs: 0.9nC @ 4.5V
Vgs(th) (Max) @ Id: 1V @ 250µA
Supplier Device Package: SOT-563
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PJX8828_R1_00001PanjitMOSFET 30V N-Channel Enhancement Mode MOSFET
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PJX8828_R2_00001PanjitMOSFET 30V N-Channel Enhancement Mode MOSFET
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PJX8838-R1-00001PanjitMOSFET
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PJX8838-R1-00002PanjitMOSFET SOT-563/MOS/SOT/NFET-50TEMN
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PJX8838-R2-00001PanjitMOSFET
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PJX8838_R1_00001Panjit International Inc.Description: MOSFET 2N-CH 50V 0.36A SOT563
Packaging: Tape & Reel (TR)
Package / Case: SOT-563, SOT-666
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 300mW (Ta)
Drain to Source Voltage (Vdss): 50V
Current - Continuous Drain (Id) @ 25°C: 360mA (Ta)
Input Capacitance (Ciss) (Max) @ Vds: 36pF @ 25V
Rds On (Max) @ Id, Vgs: 1.45Ohm @ 500mA, 10V
Gate Charge (Qg) (Max) @ Vgs: 0.95nC @ 4.5V
Vgs(th) (Max) @ Id: 1V @ 250µA
Supplier Device Package: SOT-563
auf Bestellung 4000 Stücke:
Lieferzeit 10-14 Tag (e)
4000+0.16 EUR
Mindestbestellmenge: 4000
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PJX8838_R1_00001Panjit International Inc.Description: MOSFET 2N-CH 50V 0.36A SOT563
Packaging: Cut Tape (CT)
Package / Case: SOT-563, SOT-666
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 300mW (Ta)
Drain to Source Voltage (Vdss): 50V
Current - Continuous Drain (Id) @ 25°C: 360mA (Ta)
Input Capacitance (Ciss) (Max) @ Vds: 36pF @ 25V
Rds On (Max) @ Id, Vgs: 1.45Ohm @ 500mA, 10V
Gate Charge (Qg) (Max) @ Vgs: 0.95nC @ 4.5V
Vgs(th) (Max) @ Id: 1V @ 250µA
Supplier Device Package: SOT-563
auf Bestellung 7665 Stücke:
Lieferzeit 10-14 Tag (e)
24+0.76 EUR
39+0.46 EUR
100+0.29 EUR
500+0.22 EUR
1000+0.19 EUR
2000+0.17 EUR
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PJX8838_R1_00001PanjitMOSFET 50V N-Channel Enhancement Mode MOSFETESD Protected
auf Bestellung 1895 Stücke:
Lieferzeit 10-14 Tag (e)
4+0.70 EUR
10+0.53 EUR
100+0.33 EUR
1000+0.18 EUR
4000+0.15 EUR
8000+0.13 EUR
24000+0.12 EUR
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PJX8838_R1_00002PanjitMOSFETs 50V N-Channel Enhancement Mode MOSFETESD Protected
auf Bestellung 7199 Stücke:
Lieferzeit 10-14 Tag (e)
4+0.72 EUR
10+0.54 EUR
100+0.34 EUR
1000+0.18 EUR
2500+0.16 EUR
8000+0.11 EUR
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PJX8838_R2_00001PanjitMOSFET 50V N-Channel Enhancement Mode MOSFET-ESD Protected
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PJX8839_R1_00001Panjit International Inc.Description: MOSFET 2P-CH 60V 0.2A SOT563
Packaging: Tape & Reel (TR)
Package / Case: SOT-563, SOT-666
Mounting Type: Surface Mount
Configuration: 2 P-Channel (Dual)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 300mW (Ta)
Drain to Source Voltage (Vdss): 60V
Current - Continuous Drain (Id) @ 25°C: 200mA (Ta)
Input Capacitance (Ciss) (Max) @ Vds: 51pF @ 25V
Rds On (Max) @ Id, Vgs: 4Ohm @ 500mA, 10V
Gate Charge (Qg) (Max) @ Vgs: 1.1nC @ 4.5V
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: SOT-563
Produkt ist nicht verfügbar
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PJX8839_R1_00001PanjitMOSFET /X39/TR/7"/HF/4K/SOT-563/MOS/SOT/NFET-60TEMP/NF60TE-QI03/PJ///
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PJX8839_R1_00001Panjit International Inc.Description: MOSFET 2P-CH 60V 0.2A SOT563
Packaging: Cut Tape (CT)
Package / Case: SOT-563, SOT-666
Mounting Type: Surface Mount
Configuration: 2 P-Channel (Dual)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 300mW (Ta)
Drain to Source Voltage (Vdss): 60V
Current - Continuous Drain (Id) @ 25°C: 200mA (Ta)
Input Capacitance (Ciss) (Max) @ Vds: 51pF @ 25V
Rds On (Max) @ Id, Vgs: 4Ohm @ 500mA, 10V
Gate Charge (Qg) (Max) @ Vgs: 1.1nC @ 4.5V
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: SOT-563
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PJX8839_R2_00001PanjitMOSFET 60V P-Channel Enhancement Mode MOSFET
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PJX8872B-R1-00001PanjitMOSFETs SOT563 N CHAN 60V
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PJX8872B-R2-00001PanjitMOSFETs
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PJX8872B_R1_00001PanjitMOSFETs 60V N-Channel Enhancement Mode MOSFET
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PJX8872B_R1_00001Panjit International Inc.Description: MOSFET 2N-CH 60V 0.2A SOT563
Packaging: Cut Tape (CT)
Package / Case: SOT-563, SOT-666
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 300mW (Ta)
Drain to Source Voltage (Vdss): 60V
Current - Continuous Drain (Id) @ 25°C: 200mA (Ta)
Input Capacitance (Ciss) (Max) @ Vds: 34pF @ 25V
Rds On (Max) @ Id, Vgs: 3Ohm @ 600mA, 10V
Gate Charge (Qg) (Max) @ Vgs: 0.82nC @ 4.5V
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: SOT-563
auf Bestellung 2950 Stücke:
Lieferzeit 10-14 Tag (e)
24+0.76 EUR
39+0.46 EUR
100+0.29 EUR
500+0.22 EUR
1000+0.19 EUR
2000+0.17 EUR
Mindestbestellmenge: 24
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PJX8872B_R1_00001Panjit International Inc.Description: MOSFET 2N-CH 60V 0.2A SOT563
Packaging: Tape & Reel (TR)
Package / Case: SOT-563, SOT-666
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 300mW (Ta)
Drain to Source Voltage (Vdss): 60V
Current - Continuous Drain (Id) @ 25°C: 200mA (Ta)
Input Capacitance (Ciss) (Max) @ Vds: 34pF @ 25V
Rds On (Max) @ Id, Vgs: 3Ohm @ 600mA, 10V
Gate Charge (Qg) (Max) @ Vgs: 0.82nC @ 4.5V
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: SOT-563
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PJX8872B_R2_00001PanjitMOSFETs 60V N-Channel Enhancement Mode MOSFET
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PJXL403212L3PTHammond ManufacturingElectrical Enclosures NON MET WALLMT 40X32X12
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PJXL403212L3PTHammond ManufacturingDescription: Tools/Equipment/Hardware
Packaging: Bulk
Size / Dimension: 32.200" L x 13.380" W (817.88mm x 339.85mm)
Height: 40.709" (1034.00mm)
Design: Hinged Door
Container Type: Enclosure
Area (L x W): 431in² (2780cm²)
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PJXL403212L3PTWHammond ManufacturingDescription: Tools/Equipment/Hardware
Packaging: Bulk
Color: White
Size / Dimension: 32.210" L x 11.880" W (818.13mm x 301.75mm)
Height: 40.709" (1034.00mm)
Design: Hinged Door
Container Type: Enclosure
Area (L x W): 383in² (2469cm²)
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