Produkte > RSJ

BezeichnungHerstellerBeschreibungVerfügbarkeitPreis ohne MwSt
RSJ-0352-2-NLRDI, Inc.Description: 3.5 MM MONO JACK
auf Bestellung 1000 Stücke:
Lieferzeit 21-28 Tag (e)
RSJ-0356A-U-N-NLRDI ElectronicsACCT#000458287 12/31/15
Produkt ist nicht verfügbar
RSJ-0356A-U-NLRDI Electronics.5MM STEREO JACK WITH REAR C
Produkt ist nicht verfügbar
RSJ-1500-100RiedonDescription: RES CHAS MNT 67 UOHM 0.25%
Tolerance: ±0.25%
Lead Style: 4-Terminal
Features: Current Sense, Flame Proof, Non-Inductive, Pulse Withstanding, Safety
Packaging: Bulk
Package / Case: Rectangular Case - Open
Temperature Coefficient: ±15ppm/°C
Size / Dimension: 11.250" L x 3.000" W (285.75mm x 76.20mm)
Composition: Metal Element
Operating Temperature: 30°C ~ 70°C
Mounting Feature: Flanges
Resistance: 67 µOhms
Produkt ist nicht verfügbar
RSJ-3558S-1-NLRDI, Inc.Description: 3.5MM STEREO JACK
Packaging: Tray
Features: Board Guide, Board Lock
Connector Type: Phone Jack, Dual
Gender: Female
Mounting Type: Through Hole, Right Angle
Shielding: Shielded
Number of Positions/Contacts: 2 Sets of 3 Conductors, 10 Contacts
Internal Switch(s): 2 Sets of Two Switches
Signal Lines: Stereo (3 Conductor, TRS)
Termination: Solder
Insulation Color: Black
Actual Diameter: 0.142" (3.60mm)
Industry Recognized Mating Diameter: 3.50mm (0.141", 1/8", Mini Plug) - Headphone
Part Status: Active
auf Bestellung 1300 Stücke:
Lieferzeit 21-28 Tag (e)
100+7.51 EUR
300+ 6.46 EUR
500+ 5.66 EUR
Mindestbestellmenge: 100
RSJ-360-NLRDI, Inc.Description: 3.5MM PHONE JACK
Packaging: Bag
Connector Type: Phone Jack
Gender: Female
Mounting Type: Through Hole, Right Angle
Shielding: Unshielded
Number of Positions/Contacts: 2 Conductors, 3 Contacts
Internal Switch(s): Single Switch
Signal Lines: Mono
Termination: Solder Eyelet(s)
Actual Diameter: 0.142" (3.60mm)
Industry Recognized Mating Diameter: 3.50mm (0.141", 1/8", Mini Plug) - Headphone
Produkt ist nicht verfügbar
RSJ-362-NLRDI, Inc.Description: 3.5MM AUDIO JACK
Packaging: Bag
Features: Board Guide
Connector Type: Phone Jack
Gender: Female
Mounting Type: Through Hole, Right Angle
Shielding: Unshielded
Number of Positions/Contacts: 3 Conductors, 5 Contacts
Internal Switch(s): Two Switches
Signal Lines: Mono
Termination: Solder
Actual Diameter: 0.142" (3.60mm)
Produkt ist nicht verfügbar
RSJ-370-NLRDI, Inc.Description: 3.5MM MONO JACK
Packaging: Bag
Connector Type: Phone Jack
Gender: Female
Mounting Type: Through Hole, Right Angle
Shielding: Unshielded
Number of Positions/Contacts: 2 Conductors, 3 Contacts
Internal Switch(s): Single Switch
Signal Lines: Mono
Termination: Kinked Pin, Solder
Actual Diameter: 0.142" (3.60mm)
Produkt ist nicht verfügbar
RSJ-500-NLRDI ElectronicsJACKS - AUDIO JACKS - 3.5MM
Produkt ist nicht verfügbar
RSJ-500-NLRDI, Inc.Description: 3.5MM STEREO JACK
Packaging: Tray
Connector Type: Phone Jack
Gender: Female
Mounting Type: Through Hole, Right Angle
Shielding: Unshielded
Operating Temperature: -25°C ~ 100°C
Number of Positions/Contacts: 3 Conductors, 5 Contacts
Internal Switch(s): Two Switches
Signal Lines: Stereo (3 Conductor, TRS)
Termination: Kinked Pin, Solder
Industry Recognized Mating Diameter: 3.20mm ID, 9.00mm OD (RCA)
Part Status: Active
auf Bestellung 1300 Stücke:
Lieferzeit 21-28 Tag (e)
100+1.97 EUR
Mindestbestellmenge: 100
RSJ-B57-NLRDI, Inc.Description: 3.5MM JACK
Packaging: Bag
Connector Type: Phone Jack
Gender: Female
Mounting Type: Through Hole
Shielding: Unshielded
Number of Positions/Contacts: 3 Conductors, 5 Contacts
Internal Switch(s): Two Switches
Signal Lines: Stereo (3 Conductor, TRS)
Termination: Solder Tabs
Actual Diameter: 0.142" (3.60mm)
Industry Recognized Mating Diameter: 3.50mm (0.141", 1/8", Mini Plug) - Headphone
Part Status: Active
auf Bestellung 2000 Stücke:
Lieferzeit 21-28 Tag (e)
500+1.97 EUR
1500+ 1.75 EUR
Mindestbestellmenge: 500
RSJ-BKAltech CorporationDescription: JUMPER FOR RSM BLK 20POSITION
Produkt ist nicht verfügbar
RSJ-BKAltechRelay Sockets & Fixings BLACK JUMPER For RSM
auf Bestellung 9 Stücke:
Lieferzeit 14-28 Tag (e)
4+14.22 EUR
10+ 13.47 EUR
30+ 12.64 EUR
100+ 11.6 EUR
250+ 11.28 EUR
500+ 11.1 EUR
1000+ 10.89 EUR
Mindestbestellmenge: 4
RSJ-E-ROMEGADescription: OMEGA - RSJ-E-R - Thermoelementsteckverbinder, Buchse, Typ E, Produktreihe RSJ
Thermoelement: E
Ausführung: Buchse
Produktpalette: RSJ Series
SVHC: No SVHC (17-Jan-2022)
Produkt ist nicht verfügbar
RSJ-J-ROMEGADescription: OMEGA - RSJ-J-R - Thermoelementsteckverbinder, Buchse, Typ J, Produktreihe RSJ
Thermoelement: J
Ausführung: Buchse
Produktpalette: RSJ
SVHC: No SVHC (17-Jan-2022)
auf Bestellung 64 Stücke:
Lieferzeit 14-21 Tag (e)
RSJ-J-R.OMEGADescription: OMEGA - RSJ-J-R. - THERMOCOUPLE CONNECTOR, J TYPE, RCPT
tariffCode: 85366990
Thermoelement: J
productTraceability: No
rohsCompliant: YES
Ausführung: Socket
euEccn: NLR
hazardous: false
rohsPhthalatesCompliant: YES
directShipCharge: 25
usEccn: EAR99
Produktpalette: RSJ Series
SVHC: No SVHC (17-Jan-2022)
auf Bestellung 733 Stücke:
Lieferzeit 14-21 Tag (e)
RSJ-K-ROMEGADescription: OMEGA - RSJ-K-R - Thermoelement-Steckverbinder, Produktreihe RSJ, Buchse, rund, Typ K, Buchse, Standard
tariffCode: 85366990
Thermoelement: K
productTraceability: No
rohsCompliant: YES
Ausführung: Buchse
euEccn: NLR
hazardous: false
rohsPhthalatesCompliant: YES
usEccn: EAR99
Produktpalette: RSJ
SVHC: No SVHC (17-Jan-2022)
auf Bestellung 66 Stücke:
Lieferzeit 14-21 Tag (e)
RSJ-K-R-ROHSOMEGADescription: OMEGA - RSJ-K-R-ROHS - Thermoelementsteckverbinder, Buchse, Typ K, Produktreihe RSJ
Thermoelement: K
Ausführung: Buchse
Produktpalette: RSJ Series
SVHC: No SVHC (17-Jan-2022)
Produkt ist nicht verfügbar
RSJ-K-R.OMEGADescription: OMEGA - RSJ-K-R. - THERMOCOUPLE CONNECTOR, K TYPE, RCPT
tariffCode: 85366990
Thermoelement: K
productTraceability: No
rohsCompliant: YES
Ausführung: Socket
euEccn: NLR
hazardous: false
rohsPhthalatesCompliant: YES
directShipCharge: 25
usEccn: EAR99
Produktpalette: RSJ Series
SVHC: No SVHC (17-Jan-2022)
auf Bestellung 955 Stücke:
Lieferzeit 14-21 Tag (e)
RSJ-KI-ROMEGADescription: OMEGA - RSJ-KI-R - Thermoelement-Steckverbinder, Produktreihe RSJ, Buchse, rund, Typ K, Buchse
tariffCode: 85366990
Thermoelement: K
productTraceability: No
rohsCompliant: YES
Ausführung: Buchse
euEccn: NLR
hazardous: false
rohsPhthalatesCompliant: YES
usEccn: EAR99
Produktpalette: RSJ
SVHC: No SVHC (17-Jan-2022)
auf Bestellung 9 Stücke:
Lieferzeit 14-21 Tag (e)
RSJ-N-ROMEGADescription: OMEGA - RSJ-N-R - Thermoelementsteckverbinder, Buchse, Typ N, rund, Produktreihe RSJ
Thermoelement: N
Ausführung: Buchse
Produktpalette: RSJ Series
SVHC: No SVHC (17-Jan-2022)
Produkt ist nicht verfügbar
RSJ-NI-ROMEGADescription: OMEGA - RSJ-NI-R - Thermoelementsteckverbinder, Buchse, Typ N, rund, Produktreihe RSJ
Thermoelement: N
Ausführung: Buchse
Produktpalette: RSJ Series
SVHC: No SVHC (17-Jan-2022)
Produkt ist nicht verfügbar
RSJ-R/S-ROMEGADescription: OMEGA - RSJ-R/S-R - Thermoelementsteckverbinder, Buchse, Typ R/S, rund, Produktreihe RSJ
Thermoelement: R, S
Ausführung: Buchse
Produktpalette: RSJ Series
SVHC: No SVHC (17-Jan-2022)
Produkt ist nicht verfügbar
RSJ-R/SI-ROMEGADescription: OMEGA - RSJ-R/SI-R - Thermoelementsteckverbinder, Buchse, Typ R/S, rund, Produktreihe RSJ
Thermoelement: R, S
Ausführung: Buchse
Produktpalette: RSJ Series
SVHC: No SVHC (17-Jan-2022)
Produkt ist nicht verfügbar
RSJ-T-ROMEGADescription: OMEGA - RSJ-T-R - Thermoelementsteckverbinder, Buchse, Typ T, rund, Produktreihe RSJ
Thermoelement: T
Ausführung: Buchse
Produktpalette: RSJ Series
SVHC: No SVHC (17-Jan-2022)
Produkt ist nicht verfügbar
RSJ-TI-ROMEGADescription: OMEGA - RSJ-TI-R - Thermoelementsteckverbinder, Buchse, Typ T, rund, Produktreihe RSJ
Thermoelement: T
Ausführung: Buchse
Produktpalette: RSJ Series
SVHC: No SVHC (17-Jan-2022)
Produkt ist nicht verfügbar
RSJ-U-ROMEGADescription: OMEGA - RSJ-U-R - Thermoelement-Steckverbinder, Buchse, Typ U, Produktreihe RSJ
tariffCode: 85369010
Thermoelement: U
productTraceability: No
rohsCompliant: YES
Ausführung: Buchse
euEccn: NLR
hazardous: false
rohsPhthalatesCompliant: YES
usEccn: EAR99
Produktpalette: RSJ Series
SVHC: No SVHC (10-Jun-2022)
auf Bestellung 40 Stücke:
Lieferzeit 14-21 Tag (e)
RSJ-U-R-ROHSOMEGADescription: OMEGA - RSJ-U-R-ROHS - Thermoelement-Steckverbinder, Produktreihe RSJ, Einbaubuchse, rund, Typ U, Buchse
Thermoelement: U
Ausführung: Buchse
Produktpalette: RSJ
SVHC: No SVHC (17-Jan-2022)
auf Bestellung 25 Stücke:
Lieferzeit 14-21 Tag (e)
RSJ10HN06ROHM SemiconductorMOSFET
Produkt ist nicht verfügbar
RSJ10HN06TLRohm SemiconductorDescription: MOSFET N-CH 60V 100A LPTS
Produkt ist nicht verfügbar
RSJ10HN06TLROHM SemiconductorMOSFET 4V Drive N-Ch MOSFET
Produkt ist nicht verfügbar
RSJ10HN06TLRohm SemiconductorDescription: MOSFET N-CH 60V 100A LPTS
Produkt ist nicht verfügbar
RSJ151P10TLRohm SemiconductorTrans MOSFET P-CH 100V 15A Automotive 3-Pin(2+Tab) LPTS T/R
auf Bestellung 980 Stücke:
Lieferzeit 14-21 Tag (e)
78+2.01 EUR
100+ 1.85 EUR
250+ 1.71 EUR
500+ 1.58 EUR
Mindestbestellmenge: 78
RSJ151P10TLROHM SEMICONDUCTORCategory: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -100V; -15A; Idm: -30A; 50W; D2PAK
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -100V
Drain current: -15A
Pulsed drain current: -30A
Power dissipation: 50W
Case: D2PAK
Gate-source voltage: ±20V
On-state resistance: 0.22Ω
Mounting: SMD
Gate charge: 64nC
Kind of package: reel; tape
Kind of channel: enhanced
Produkt ist nicht verfügbar
RSJ151P10TLROHM SEMICONDUCTORCategory: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -100V; -15A; Idm: -30A; 50W; D2PAK
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -100V
Drain current: -15A
Pulsed drain current: -30A
Power dissipation: 50W
Case: D2PAK
Gate-source voltage: ±20V
On-state resistance: 0.22Ω
Mounting: SMD
Gate charge: 64nC
Kind of package: reel; tape
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
RSJ151P10TLROHM SemiconductorMOSFET 4V Drive Pch MOSFET Drive Pch
auf Bestellung 182 Stücke:
Lieferzeit 14-28 Tag (e)
15+3.61 EUR
18+ 2.96 EUR
100+ 2.3 EUR
500+ 1.95 EUR
1000+ 1.59 EUR
2000+ 1.49 EUR
5000+ 1.42 EUR
Mindestbestellmenge: 15
RSJ151P10TLROHMDescription: ROHM - RSJ151P10TL - Leistungs-MOSFET, p-Kanal, 100 V, 15 A, 0.085 ohm, TO-263 (D2PAK), Oberflächenmontage
tariffCode: 85412900
Drain-Source-Spannung Vds: 100V
rohsCompliant: YES
Dauer-Drainstrom Id: 15A
hazardous: false
rohsPhthalatesCompliant: YES
usEccn: EAR99
Gate-Source-Schwellenspannung, max.: 2.5V
euEccn: NLR
Verlustleistung: 50W
Anzahl der Pins: 3Pin(s)
productTraceability: No
Rds(on)-Prüfspannung: 10V
Betriebstemperatur, max.: 150°C
Drain-Source-Durchgangswiderstand: 0.085ohm
auf Bestellung 878 Stücke:
Lieferzeit 14-21 Tag (e)
RSJ151P10TLRohm SemiconductorDescription: MOSFET P-CH 100V 15A LPTS
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 15A (Tc)
Rds On (Max) @ Id, Vgs: 120mOhm @ 15A, 10V
Power Dissipation (Max): 1.35W (Ta), 50W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 1mA
Supplier Device Package: LPTS
Drive Voltage (Max Rds On, Min Rds On): 4V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 64 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3800 pF @ 25 V
auf Bestellung 3000 Stücke:
Lieferzeit 21-28 Tag (e)
1000+1.58 EUR
2000+ 1.48 EUR
Mindestbestellmenge: 1000
RSJ151P10TLRohm SemiconductorTrans MOSFET P-CH 100V 15A Automotive 3-Pin(2+Tab) LPTS T/R
auf Bestellung 583 Stücke:
Lieferzeit 14-21 Tag (e)
107+1.46 EUR
114+ 1.33 EUR
131+ 1.11 EUR
200+ 1.02 EUR
500+ 0.98 EUR
Mindestbestellmenge: 107
RSJ151P10TLROHMDescription: ROHM - RSJ151P10TL - Leistungs-MOSFET, p-Kanal, 100 V, 15 A, 0.085 ohm, TO-263 (D2PAK), Oberflächenmontage
tariffCode: 85412900
Drain-Source-Spannung Vds: 100V
rohsCompliant: YES
Dauer-Drainstrom Id: 15A
hazardous: false
rohsPhthalatesCompliant: YES
usEccn: EAR99
Gate-Source-Schwellenspannung, max.: 2.5V
euEccn: NLR
Verlustleistung: 50W
Anzahl der Pins: 3Pin(s)
productTraceability: No
Rds(on)-Prüfspannung: 10V
Betriebstemperatur, max.: 150°C
Drain-Source-Durchgangswiderstand: 0.085ohm
auf Bestellung 878 Stücke:
Lieferzeit 14-21 Tag (e)
RSJ151P10TLRohm SemiconductorDescription: MOSFET P-CH 100V 15A LPTS
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 15A (Tc)
Rds On (Max) @ Id, Vgs: 120mOhm @ 15A, 10V
Power Dissipation (Max): 1.35W (Ta), 50W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 1mA
Supplier Device Package: LPTS
Drive Voltage (Max Rds On, Min Rds On): 4V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 64 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3800 pF @ 25 V
auf Bestellung 3072 Stücke:
Lieferzeit 21-28 Tag (e)
8+3.59 EUR
10+ 2.93 EUR
100+ 2.28 EUR
500+ 1.93 EUR
Mindestbestellmenge: 8
RSJ17505+
auf Bestellung 1000 Stücke:
Lieferzeit 21-28 Tag (e)
RSJ175
auf Bestellung 1000 Stücke:
Lieferzeit 21-28 Tag (e)
RSJ17505+
auf Bestellung 1000 Stücke:
Lieferzeit 21-28 Tag (e)
RSJ250P10FRATLROHM - JapanTransistor P-Channel MOSFET; 100V; 20V; 25A; 45mOhm; 50W; -55°C~150°C; RSJ250P10FRATL Rohm Semiconductor TRSJ250p10fratl
Anzahl je Verpackung: 2 Stücke
auf Bestellung 10 Stücke:
Lieferzeit 7-14 Tag (e)
10+3.49 EUR
Mindestbestellmenge: 10
RSJ250P10FRATLROHMDescription: ROHM - RSJ250P10FRATL - Leistungs-MOSFET, p-Kanal, 100 V, 25 A, 0.045 ohm, TO-263 (D2PAK), Oberflächenmontage
tariffCode: 85412900
Drain-Source-Spannung Vds: 100V
rohsCompliant: YES
Dauer-Drainstrom Id: 25A
hazardous: false
rohsPhthalatesCompliant: YES
usEccn: EAR99
Gate-Source-Schwellenspannung, max.: 2.5V
euEccn: NLR
Verlustleistung: 50W
Anzahl der Pins: 3Pin(s)
productTraceability: No
Rds(on)-Prüfspannung: 10V
Betriebstemperatur, max.: 150°C
Drain-Source-Durchgangswiderstand: 0.045ohm
auf Bestellung 1018 Stücke:
Lieferzeit 14-21 Tag (e)
RSJ250P10FRATLRohm SemiconductorDescription: MOSFET P-CH 100V 25A LPTS
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: 150°C
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 25A (Tc)
Rds On (Max) @ Id, Vgs: 63mOhm @ 25A, 10V
Power Dissipation (Max): 50W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 1mA
Supplier Device Package: LPTS
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 60 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 8000 pF @ 25 V
Grade: Automotive
Qualification: AEC-Q101
auf Bestellung 2887 Stücke:
Lieferzeit 21-28 Tag (e)
6+4.34 EUR
10+ 3.61 EUR
100+ 2.87 EUR
500+ 2.43 EUR
Mindestbestellmenge: 6
RSJ250P10FRATLRohm SemiconductorTrans MOSFET P-CH Si 100V 25A Automotive 3-Pin(2+Tab) LPTS T/R
auf Bestellung 990 Stücke:
Lieferzeit 14-21 Tag (e)
62+2.54 EUR
74+ 2.05 EUR
100+ 1.87 EUR
200+ 1.78 EUR
500+ 1.57 EUR
Mindestbestellmenge: 62
RSJ250P10FRATLRohm SemiconductorTrans MOSFET P-CH Si 100V 25A Automotive AEC-Q101 3-Pin(2+Tab) LPTS T/R
Produkt ist nicht verfügbar
RSJ250P10FRATLROHM SEMICONDUCTORCategory: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -100V; -25A; Idm: -50A; 50W; TO263
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -100V
Drain current: -25A
Pulsed drain current: -50A
Power dissipation: 50W
Case: TO263
Gate-source voltage: ±20V
On-state resistance: 63mΩ
Mounting: SMD
Gate charge: 60nC
Kind of package: reel; tape
Kind of channel: enhanced
Features of semiconductor devices: ESD protected gate
Application: automotive industry
Anzahl je Verpackung: 1 Stücke
auf Bestellung 352 Stücke:
Lieferzeit 7-14 Tag (e)
40+1.79 EUR
45+ 1.6 EUR
52+ 1.4 EUR
54+ 1.33 EUR
Mindestbestellmenge: 40
RSJ250P10FRATLROHM SEMICONDUCTORCategory: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -100V; -25A; Idm: -50A; 50W; TO263
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -100V
Drain current: -25A
Pulsed drain current: -50A
Power dissipation: 50W
Case: TO263
Gate-source voltage: ±20V
On-state resistance: 63mΩ
Mounting: SMD
Gate charge: 60nC
Kind of package: reel; tape
Kind of channel: enhanced
Features of semiconductor devices: ESD protected gate
Application: automotive industry
auf Bestellung 352 Stücke:
Lieferzeit 14-21 Tag (e)
40+1.79 EUR
45+ 1.6 EUR
52+ 1.4 EUR
54+ 1.33 EUR
Mindestbestellmenge: 40
RSJ250P10FRATLROHMDescription: ROHM - RSJ250P10FRATL - Leistungs-MOSFET, p-Kanal, 100 V, 25 A, 0.045 ohm, TO-263 (D2PAK), Oberflächenmontage
tariffCode: 85412900
Drain-Source-Spannung Vds: 100V
rohsCompliant: YES
Dauer-Drainstrom Id: 25A
hazardous: false
rohsPhthalatesCompliant: YES
usEccn: EAR99
Gate-Source-Schwellenspannung, max.: 2.5V
euEccn: NLR
Verlustleistung: 50W
Anzahl der Pins: 3Pin(s)
productTraceability: No
Rds(on)-Prüfspannung: 10V
Betriebstemperatur, max.: 150°C
Drain-Source-Durchgangswiderstand: 0.045ohm
auf Bestellung 1018 Stücke:
Lieferzeit 14-21 Tag (e)
RSJ250P10FRATLRohm SemiconductorDescription: MOSFET P-CH 100V 25A LPTS
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: 150°C
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 25A (Tc)
Rds On (Max) @ Id, Vgs: 63mOhm @ 25A, 10V
Power Dissipation (Max): 50W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 1mA
Supplier Device Package: LPTS
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 60 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 8000 pF @ 25 V
Grade: Automotive
Qualification: AEC-Q101
auf Bestellung 2000 Stücke:
Lieferzeit 21-28 Tag (e)
1000+2.06 EUR
2000+ 1.96 EUR
Mindestbestellmenge: 1000
RSJ250P10FRATLROHM SemiconductorMOSFET Pch -100V Vds -25A 0.05Rds(on) 60Qg
auf Bestellung 4486 Stücke:
Lieferzeit 14-28 Tag (e)
12+4.37 EUR
15+ 3.64 EUR
100+ 2.91 EUR
250+ 2.86 EUR
500+ 2.44 EUR
1000+ 2.07 EUR
2000+ 1.97 EUR
Mindestbestellmenge: 12
RSJ250P10TLROHM SEMICONDUCTORCategory: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -100V; -25A; Idm: -50A; 50W; D2PAK
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -100V
Drain current: -25A
Pulsed drain current: -50A
Power dissipation: 50W
Case: D2PAK
Gate-source voltage: ±20V
On-state resistance: 70mΩ
Mounting: SMD
Gate charge: 60nC
Kind of package: reel; tape
Kind of channel: enhanced
Produkt ist nicht verfügbar
RSJ250P10TLROHMDescription: ROHM - RSJ250P10TL - Leistungs-MOSFET, p-Kanal, 100 V, 25 A, 0.045 ohm, TO-263 (D2PAK), Oberflächenmontage
tariffCode: 85412900
Drain-Source-Spannung Vds: 100V
rohsCompliant: YES
Dauer-Drainstrom Id: 25A
hazardous: false
rohsPhthalatesCompliant: YES
usEccn: EAR99
Gate-Source-Schwellenspannung, max.: 2.5V
euEccn: NLR
Verlustleistung: 50W
Anzahl der Pins: 3Pin(s)
productTraceability: No
Rds(on)-Prüfspannung: 10V
Betriebstemperatur, max.: -999°C
Drain-Source-Durchgangswiderstand: 0.045ohm
auf Bestellung 2178 Stücke:
Lieferzeit 14-21 Tag (e)
RSJ250P10TLRohm SemiconductorDescription: MOSFET P-CH 100V 25A LPTS
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 25A (Tc)
Rds On (Max) @ Id, Vgs: 63mOhm @ 25A, 10V
Power Dissipation (Max): 50W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 1mA
Supplier Device Package: LPTS
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 60 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 8000 pF @ 25 V
Produkt ist nicht verfügbar
RSJ250P10TLRohm SemiconductorTrans MOSFET P-CH Si 100V 25A 3-Pin(2+Tab) LPTS T/R
auf Bestellung 4030 Stücke:
Lieferzeit 14-21 Tag (e)
61+2.59 EUR
63+ 2.41 EUR
100+ 2.24 EUR
250+ 2.09 EUR
500+ 1.95 EUR
1000+ 1.82 EUR
2500+ 1.71 EUR
Mindestbestellmenge: 61
RSJ250P10TLROHM SemiconductorMOSFET PWR MOSFET LOW RESIST DEVICE
auf Bestellung 6989 Stücke:
Lieferzeit 161-175 Tag (e)
8+6.68 EUR
10+ 5.62 EUR
25+ 5.43 EUR
100+ 4.55 EUR
250+ 4.39 EUR
500+ 4.03 EUR
1000+ 3.43 EUR
Mindestbestellmenge: 8
RSJ250P10TLROHM SEMICONDUCTORCategory: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -100V; -25A; Idm: -50A; 50W; D2PAK
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -100V
Drain current: -25A
Pulsed drain current: -50A
Power dissipation: 50W
Case: D2PAK
Gate-source voltage: ±20V
On-state resistance: 70mΩ
Mounting: SMD
Gate charge: 60nC
Kind of package: reel; tape
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
RSJ250P10TLRohm SemiconductorTrans MOSFET P-CH Si 100V 25A 3-Pin(2+Tab) LPTS T/R
auf Bestellung 6987 Stücke:
Lieferzeit 14-21 Tag (e)
61+2.6 EUR
67+ 2.28 EUR
100+ 1.8 EUR
200+ 1.62 EUR
500+ 1.55 EUR
1000+ 1.32 EUR
2000+ 1.19 EUR
4000+ 1.16 EUR
Mindestbestellmenge: 61
RSJ250P10TLROHMDescription: ROHM - RSJ250P10TL - Leistungs-MOSFET, p-Kanal, 100 V, 25 A, 0.045 ohm, TO-263 (D2PAK), Oberflächenmontage
tariffCode: 85412900
Drain-Source-Spannung Vds: 100V
rohsCompliant: YES
Dauer-Drainstrom Id: 25A
hazardous: false
rohsPhthalatesCompliant: YES
usEccn: EAR99
Gate-Source-Schwellenspannung, max.: 2.5V
euEccn: NLR
Verlustleistung: 50W
Anzahl der Pins: 3Pin(s)
productTraceability: No
Rds(on)-Prüfspannung: 10V
Betriebstemperatur, max.: -999°C
Drain-Source-Durchgangswiderstand: 0.045ohm
auf Bestellung 2178 Stücke:
Lieferzeit 14-21 Tag (e)
RSJ250P10TLRohm SemiconductorDescription: MOSFET P-CH 100V 25A LPTS
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 25A (Tc)
Rds On (Max) @ Id, Vgs: 63mOhm @ 25A, 10V
Power Dissipation (Max): 50W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 1mA
Supplier Device Package: LPTS
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 60 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 8000 pF @ 25 V
auf Bestellung 1269 Stücke:
Lieferzeit 21-28 Tag (e)
4+6.63 EUR
10+ 5.56 EUR
100+ 4.5 EUR
500+ 4 EUR
Mindestbestellmenge: 4
RSJ250P10TL LPTSROHM - JapanP-Channel 100V 25A (Ta) 50W (Tc) Surface Mount LPTS TO-263-3, D?Pak (2 Leads + Tab), TO-263AB RSJ250P10TL Rohm Semiconductor TRSJ250p10tl
Anzahl je Verpackung: 10 Stücke
auf Bestellung 12 Stücke:
Lieferzeit 7-14 Tag (e)
10+5.33 EUR
Mindestbestellmenge: 10
RSJ300N10TLROHM SemiconductorMOSFET PWR MOSFET LOW RESIST DEVICE
auf Bestellung 67 Stücke:
Lieferzeit 14-28 Tag (e)
RSJ300N10TLRohm SemiconductorDescription: MOSFET N-CH 100V 30A LPTS
Produkt ist nicht verfügbar
RSJ301N10FRATLRohm SemiconductorDescription: MOSFET N-CH 100V 30A LPTS
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 30A (Ta)
Rds On (Max) @ Id, Vgs: 46mOhm @ 15A, 10V
Power Dissipation (Max): 50W (Ta)
Vgs(th) (Max) @ Id: 2.5V @ 1mA
Supplier Device Package: LPTS
Grade: Automotive
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 60 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2100 pF @ 25 V
Qualification: AEC-Q101
auf Bestellung 3000 Stücke:
Lieferzeit 21-28 Tag (e)
1000+2.88 EUR
2000+ 2.73 EUR
Mindestbestellmenge: 1000
RSJ301N10FRATLROHM SemiconductorMOSFET Nch 100V Vds 30A 0.036Rds(on) 60Qg
auf Bestellung 52 Stücke:
Lieferzeit 14-28 Tag (e)
9+6.08 EUR
11+ 5.04 EUR
100+ 4 EUR
250+ 3.72 EUR
500+ 3.38 EUR
1000+ 2.86 EUR
2000+ 2.83 EUR
Mindestbestellmenge: 9
RSJ301N10FRATLRohm SemiconductorDescription: MOSFET N-CH 100V 30A LPTS
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 30A (Ta)
Rds On (Max) @ Id, Vgs: 46mOhm @ 15A, 10V
Power Dissipation (Max): 50W (Ta)
Vgs(th) (Max) @ Id: 2.5V @ 1mA
Supplier Device Package: LPTS
Grade: Automotive
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 60 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2100 pF @ 25 V
Qualification: AEC-Q101
auf Bestellung 3050 Stücke:
Lieferzeit 21-28 Tag (e)
5+6.08 EUR
10+ 5.04 EUR
100+ 4.01 EUR
500+ 3.39 EUR
Mindestbestellmenge: 5
RSJ301N10TLROHM SemiconductorMOSFET MOSFET
auf Bestellung 3812 Stücke:
Lieferzeit 14-28 Tag (e)
8+6.79 EUR
10+ 5.69 EUR
25+ 5.38 EUR
100+ 4.63 EUR
250+ 4.34 EUR
500+ 4.11 EUR
1000+ 3.48 EUR
Mindestbestellmenge: 8
RSJ301N10TLRohm SemiconductorDescription: NCH 100V 30A POWER MOSFET : RSJ3
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 30A (Ta)
Rds On (Max) @ Id, Vgs: 46mOhm @ 15A, 10V
Power Dissipation (Max): 50W (Ta)
Vgs(th) (Max) @ Id: 2.5V @ 1mA
Supplier Device Package: TO-263S
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 60 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2100 pF @ 25 V
auf Bestellung 1000 Stücke:
Lieferzeit 21-28 Tag (e)
1000+3.48 EUR
Mindestbestellmenge: 1000
RSJ301N10TLRohm SemiconductorDescription: NCH 100V 30A POWER MOSFET : RSJ3
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 30A (Ta)
Rds On (Max) @ Id, Vgs: 46mOhm @ 15A, 10V
Power Dissipation (Max): 50W (Ta)
Vgs(th) (Max) @ Id: 2.5V @ 1mA
Supplier Device Package: TO-263S
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 60 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2100 pF @ 25 V
auf Bestellung 1266 Stücke:
Lieferzeit 21-28 Tag (e)
4+6.73 EUR
10+ 5.65 EUR
100+ 4.57 EUR
500+ 4.06 EUR
Mindestbestellmenge: 4
RSJ400N06FRATLRohm SemiconductorDescription: MOSFET N-CH 60V 40A LPTS
auf Bestellung 8 Stücke:
Lieferzeit 21-28 Tag (e)
6+4.86 EUR
Mindestbestellmenge: 6
RSJ400N06FRATLRohm SemiconductorDescription: MOSFET N-CH 60V 40A LPTS
Produkt ist nicht verfügbar
RSJ400N06FRATLROHM SEMICONDUCTORRSJ400N06FRATL SMD N channel transistors
Produkt ist nicht verfügbar
RSJ400N06FRATLROHM SemiconductorMOSFET Nch 60V Vds 40A 0.011Rds(on) 52Qg
auf Bestellung 3443 Stücke:
Lieferzeit 14-28 Tag (e)
13+4.13 EUR
16+ 3.25 EUR
100+ 2.76 EUR
250+ 2.54 EUR
500+ 2.3 EUR
1000+ 1.9 EUR
2000+ 1.87 EUR
Mindestbestellmenge: 13
RSJ400N06TLRohm SemiconductorDescription: MOSFET N-CH 60V 40A LPTS
auf Bestellung 137 Stücke:
Lieferzeit 21-28 Tag (e)
RSJ400N06TLROHM SemiconductorMOSFET 10V Drive Nch MOSFET
Produkt ist nicht verfügbar
RSJ400N06TLRohm SemiconductorDescription: MOSFET N-CH 60V 40A LPTS
Produkt ist nicht verfügbar
RSJ400N10FRATLROHMDescription: ROHM - RSJ400N10FRATL - Leistungs-MOSFET, n-Kanal, 100 V, 40 A, 0.019 ohm, TO-263 (D2PAK), Oberflächenmontage
tariffCode: 85412900
Transistormontage: Oberflächenmontage
Drain-Source-Spannung Vds: 100V
rohsCompliant: YES
Dauer-Drainstrom Id: 40A
hazardous: false
rohsPhthalatesCompliant: YES
Qualifikation: -
MSL: MSL 1 - unbegrenzt
usEccn: EAR99
Gate-Source-Schwellenspannung, max.: 2.5V
euEccn: NLR
Verlustleistung: 50W
Bauform - Transistor: TO-263 (D2PAK)
Anzahl der Pins: 3Pin(s)
Produktpalette: -
productTraceability: No
Kanaltyp: n-Kanal
Rds(on)-Prüfspannung: 10V
Betriebstemperatur, max.: 150°C
Drain-Source-Durchgangswiderstand: 0.019ohm
SVHC: Lead (17-Jan-2023)
auf Bestellung 3 Stücke:
Lieferzeit 14-21 Tag (e)
RSJ400N10FRATLROHM SemiconductorMOSFET Nch 100V Vdss 40A ID TO-263(D2PAK); LPTS
auf Bestellung 661 Stücke:
Lieferzeit 14-28 Tag (e)
8+7.1 EUR
10+ 6.37 EUR
100+ 5.23 EUR
500+ 4.45 EUR
1000+ 3.74 EUR
2000+ 3.54 EUR
5000+ 3.43 EUR
Mindestbestellmenge: 8
RSJ400N10FRATLROHMDescription: ROHM - RSJ400N10FRATL - Leistungs-MOSFET, n-Kanal, 100 V, 40 A, 0.019 ohm, TO-263 (D2PAK), Oberflächenmontage
tariffCode: 85412900
Transistormontage: Oberflächenmontage
Drain-Source-Spannung Vds: 100V
rohsCompliant: YES
Dauer-Drainstrom Id: 40A
hazardous: false
rohsPhthalatesCompliant: YES
Qualifikation: -
MSL: MSL 1 - unbegrenzt
usEccn: EAR99
Gate-Source-Schwellenspannung, max.: 2.5V
euEccn: NLR
Verlustleistung: 50W
Bauform - Transistor: TO-263 (D2PAK)
Anzahl der Pins: 3Pin(s)
Produktpalette: -
productTraceability: No
Kanaltyp: n-Kanal
Rds(on)-Prüfspannung: 10V
Betriebstemperatur, max.: 150°C
Drain-Source-Durchgangswiderstand: 0.019ohm
SVHC: Lead (17-Jan-2023)
auf Bestellung 3 Stücke:
Lieferzeit 14-21 Tag (e)
RSJ400N10FRATLRohm SemiconductorDescription: MOSFET N-CH 100V 40A LPTS
auf Bestellung 50 Stücke:
Lieferzeit 21-28 Tag (e)
4+7.28 EUR
10+ 6.54 EUR
Mindestbestellmenge: 4
RSJ400N10FRATLRohm SemiconductorDescription: MOSFET N-CH 100V 40A LPTS
Produkt ist nicht verfügbar
RSJ400N10TLRohm SemiconductorDescription: MOSFET N-CH 100V 40A LPTS
Produkt ist nicht verfügbar
RSJ400N10TLROHM SEMICONDUCTORCategory: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 40A; Idm: 80A; 50W; D2PAK
Case: D2PAK
Mounting: SMD
Kind of package: reel; tape
Power dissipation: 50W
Drain-source voltage: 100V
Drain current: 40A
On-state resistance: 30mΩ
Type of transistor: N-MOSFET
Polarisation: unipolar
Gate charge: 90nC
Kind of channel: enhanced
Gate-source voltage: ±20V
Pulsed drain current: 80A
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
RSJ400N10TLRohm SemiconductorDescription: MOSFET N-CH 100V 40A LPTS
auf Bestellung 15 Stücke:
Lieferzeit 21-28 Tag (e)
3+9.62 EUR
10+ 8.65 EUR
Mindestbestellmenge: 3
RSJ400N10TLROHMDescription: ROHM - RSJ400N10TL - Leistungs-MOSFET, n-Kanal, 100 V, 40 A, 0.019 ohm, TO-263 (D2PAK), Oberflächenmontage
Transistormontage: Oberflächenmontage
Drain-Source-Spannung Vds: 100
Dauer-Drainstrom Id: 40
Rds(on)-Messspannung Vgs: 10
MSL: MSL 1 - unbegrenzt
Verlustleistung Pd: 50
Bauform - Transistor: TO-263 (D2PAK)
Anzahl der Pins: 3
Produktpalette: -
Wandlerpolarität: n-Kanal
Betriebswiderstand, Rds(on): 0.019
Betriebstemperatur, max.: 150
Schwellenspannung Vgs: 2.5
SVHC: Lead (08-Jul-2021)
Produkt ist nicht verfügbar
RSJ400N10TLROHM SemiconductorMOSFET 4V Drive Nch MOSFET
auf Bestellung 511 Stücke:
Lieferzeit 14-28 Tag (e)
5+10.45 EUR
10+ 9.41 EUR
25+ 8.89 EUR
100+ 7.7 EUR
Mindestbestellmenge: 5
RSJ400N10TLROHM SEMICONDUCTORCategory: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 40A; Idm: 80A; 50W; D2PAK
Case: D2PAK
Mounting: SMD
Kind of package: reel; tape
Power dissipation: 50W
Drain-source voltage: 100V
Drain current: 40A
On-state resistance: 30mΩ
Type of transistor: N-MOSFET
Polarisation: unipolar
Gate charge: 90nC
Kind of channel: enhanced
Gate-source voltage: ±20V
Pulsed drain current: 80A
Produkt ist nicht verfügbar
RSJ4500-1BG
auf Bestellung 295 Stücke:
Lieferzeit 21-28 Tag (e)
RSJ4500-1BG05+
auf Bestellung 295 Stücke:
Lieferzeit 21-28 Tag (e)
RSJ450N04TLRohm SemiconductorDescription: MOSFET N-CH 40V 45A LPTS
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 45A (Ta)
Rds On (Max) @ Id, Vgs: 13.5mOhm @ 25A, 10V
Power Dissipation (Max): 50W (Tc)
Vgs(th) (Max) @ Id: 3V @ 1mA
Supplier Device Package: LPTS
Part Status: Not For New Designs
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 43 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2400 pF @ 25 V
auf Bestellung 1000 Stücke:
Lieferzeit 21-28 Tag (e)
1000+2.41 EUR
Mindestbestellmenge: 1000
RSJ450N04TLROHM SemiconductorMOSFET 10V Drive Nch MOSFET
Produkt ist nicht verfügbar
RSJ450N04TLRohm SemiconductorDescription: MOSFET N-CH 40V 45A LPTS
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 45A (Ta)
Rds On (Max) @ Id, Vgs: 13.5mOhm @ 25A, 10V
Power Dissipation (Max): 50W (Tc)
Vgs(th) (Max) @ Id: 3V @ 1mA
Supplier Device Package: LPTS
Part Status: Not For New Designs
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 43 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2400 pF @ 25 V
Produkt ist nicht verfügbar
RSJ450N04TLRohm SemiconductorDescription: MOSFET N-CH 40V 45A LPTS
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 45A (Ta)
Rds On (Max) @ Id, Vgs: 13.5mOhm @ 25A, 10V
Power Dissipation (Max): 50W (Tc)
Vgs(th) (Max) @ Id: 3V @ 1mA
Supplier Device Package: LPTS
Part Status: Not For New Designs
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 43 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2400 pF @ 25 V
auf Bestellung 949 Stücke:
Lieferzeit 21-28 Tag (e)
6+5.1 EUR
10+ 4.22 EUR
100+ 3.36 EUR
500+ 2.84 EUR
Mindestbestellmenge: 6
RSJ451N04FRATLRohm SemiconductorDescription: MOSFET N-CH 40V 45A LPTS
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 45A (Tc)
Rds On (Max) @ Id, Vgs: 13.5mOhm @ 25A, 10V
Power Dissipation (Max): 50W (Tc)
Vgs(th) (Max) @ Id: 3V @ 1mA
Supplier Device Package: LPTS
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 43 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2400 pF @ 25 V
Produkt ist nicht verfügbar
RSJ451N04FRATLROHMDescription: ROHM - RSJ451N04FRATL - Leistungs-MOSFET, n-Kanal, 40 V, 45 A, 0.0095 ohm, TO-263 (D2PAK), Oberflächenmontage
tariffCode: 85412900
Drain-Source-Spannung Vds: 40V
rohsCompliant: YES
Dauer-Drainstrom Id: 45A
hazardous: false
rohsPhthalatesCompliant: YES
usEccn: EAR99
Gate-Source-Schwellenspannung, max.: 3V
euEccn: NLR
Verlustleistung: 50W
Anzahl der Pins: 3Pin(s)
productTraceability: Yes-Date/Lot Code
Rds(on)-Prüfspannung: 10V
Betriebstemperatur, max.: 150°C
Drain-Source-Durchgangswiderstand: 0.0095ohm
auf Bestellung 1000 Stücke:
Lieferzeit 14-21 Tag (e)
RSJ451N04FRATLRohm SemiconductorDescription: MOSFET N-CH 40V 45A LPTS
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 45A (Tc)
Rds On (Max) @ Id, Vgs: 13.5mOhm @ 25A, 10V
Power Dissipation (Max): 50W (Tc)
Vgs(th) (Max) @ Id: 3V @ 1mA
Supplier Device Package: LPTS
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 43 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2400 pF @ 25 V
Produkt ist nicht verfügbar
RSJ451N04FRATLROHMDescription: ROHM - RSJ451N04FRATL - Leistungs-MOSFET, n-Kanal, 40 V, 45 A, 0.0095 ohm, TO-263 (D2PAK), Oberflächenmontage
tariffCode: 85412900
Drain-Source-Spannung Vds: 40V
rohsCompliant: YES
Dauer-Drainstrom Id: 45A
hazardous: false
rohsPhthalatesCompliant: YES
usEccn: EAR99
Gate-Source-Schwellenspannung, max.: 3V
euEccn: NLR
Verlustleistung: 50W
Anzahl der Pins: 3Pin(s)
productTraceability: Yes-Date/Lot Code
Rds(on)-Prüfspannung: 10V
Betriebstemperatur, max.: 150°C
Drain-Source-Durchgangswiderstand: 0.0095ohm
auf Bestellung 1000 Stücke:
Lieferzeit 14-21 Tag (e)
RSJ451N04FRATLROHM SemiconductorMOSFET Nch 40V Vdss 45A ID TO-263(D2PAK); LPTS
auf Bestellung 188 Stücke:
Lieferzeit 14-28 Tag (e)
9+5.95 EUR
11+ 4.97 EUR
100+ 3.95 EUR
250+ 3.85 EUR
500+ 3.33 EUR
1000+ 2.81 EUR
2000+ 2.65 EUR
Mindestbestellmenge: 9
RSJ550N10TLRohm SemiconductorDescription: MOSFET N-CH 100V 55A LPTS
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 55A (Ta)
Rds On (Max) @ Id, Vgs: 16.8mOhm @ 27.5A, 10V
Power Dissipation (Max): 100W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 1mA
Supplier Device Package: LPTS
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 143 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 6150 pF @ 25 V
Produkt ist nicht verfügbar
RSJ550N10TLROHM SEMICONDUCTORCategory: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 55A; Idm: 110A; 100W; D2PAK
Drain-source voltage: 100V
Drain current: 55A
On-state resistance: 18.9mΩ
Type of transistor: N-MOSFET
Polarisation: unipolar
Kind of package: reel; tape
Gate charge: 143nC
Kind of channel: enhanced
Gate-source voltage: ±20V
Pulsed drain current: 110A
Power dissipation: 100W
Mounting: SMD
Case: D2PAK
Anzahl je Verpackung: 1000 Stücke
Produkt ist nicht verfügbar
RSJ550N10TLROHM SEMICONDUCTORCategory: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 55A; Idm: 110A; 100W; D2PAK
Drain-source voltage: 100V
Drain current: 55A
On-state resistance: 18.9mΩ
Type of transistor: N-MOSFET
Polarisation: unipolar
Kind of package: reel; tape
Gate charge: 143nC
Kind of channel: enhanced
Gate-source voltage: ±20V
Pulsed drain current: 110A
Power dissipation: 100W
Mounting: SMD
Case: D2PAK
Produkt ist nicht verfügbar
RSJ550N10TLROHM SemiconductorMOSFET 4V Drive Nch MOSFET
auf Bestellung 1750 Stücke:
Lieferzeit 14-28 Tag (e)
6+10.06 EUR
10+ 8.45 EUR
25+ 7.98 EUR
100+ 6.84 EUR
250+ 6.45 EUR
500+ 6.06 EUR
1000+ 4.86 EUR
Mindestbestellmenge: 6
RSJ550N10TLRohm SemiconductorDescription: MOSFET N-CH 100V 55A LPTS
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 55A (Ta)
Rds On (Max) @ Id, Vgs: 16.8mOhm @ 27.5A, 10V
Power Dissipation (Max): 100W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 1mA
Supplier Device Package: LPTS
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 143 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 6150 pF @ 25 V
auf Bestellung 896 Stücke:
Lieferzeit 21-28 Tag (e)
3+9.98 EUR
10+ 8.38 EUR
100+ 6.78 EUR
500+ 6.03 EUR
Mindestbestellmenge: 3
RSJ650N10TLROHM SemiconductorMOSFET 4V Drive Nch MOSFET
auf Bestellung 254 Stücke:
Lieferzeit 14-28 Tag (e)
4+14.69 EUR
10+ 12.61 EUR
100+ 10.53 EUR
250+ 10.5 EUR
500+ 9.26 EUR
1000+ 7.96 EUR
Mindestbestellmenge: 4
RSJ650N10TLRohm SemiconductorDescription: MOSFET N-CH 100V 65A LPTS
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 65A (Ta)
Rds On (Max) @ Id, Vgs: 9.1mOhm @ 32.5A, 10V
Power Dissipation (Max): 100W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 1mA
Supplier Device Package: LPTS
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 260 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 10780 pF @ 25 V
Produkt ist nicht verfügbar
RSJ650N10TLROHM SEMICONDUCTORCategory: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 65A; Idm: 130A; 100W; D2PAK
Drain-source voltage: 100V
Drain current: 65A
On-state resistance: 9.8mΩ
Type of transistor: N-MOSFET
Polarisation: unipolar
Kind of package: reel; tape
Gate charge: 260nC
Kind of channel: enhanced
Gate-source voltage: ±20V
Pulsed drain current: 130A
Power dissipation: 100W
Mounting: SMD
Case: D2PAK
Anzahl je Verpackung: 1000 Stücke
Produkt ist nicht verfügbar
RSJ650N10TLROHM SEMICONDUCTORCategory: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 65A; Idm: 130A; 100W; D2PAK
Drain-source voltage: 100V
Drain current: 65A
On-state resistance: 9.8mΩ
Type of transistor: N-MOSFET
Polarisation: unipolar
Kind of package: reel; tape
Gate charge: 260nC
Kind of channel: enhanced
Gate-source voltage: ±20V
Pulsed drain current: 130A
Power dissipation: 100W
Mounting: SMD
Case: D2PAK
Produkt ist nicht verfügbar
RSJ650N10TLRohm SemiconductorDescription: MOSFET N-CH 100V 65A LPTS
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 65A (Ta)
Rds On (Max) @ Id, Vgs: 9.1mOhm @ 32.5A, 10V
Power Dissipation (Max): 100W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 1mA
Supplier Device Package: LPTS
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 260 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 10780 pF @ 25 V
auf Bestellung 970 Stücke:
Lieferzeit 21-28 Tag (e)
2+14.59 EUR
10+ 12.52 EUR
100+ 10.43 EUR
500+ 9.2 EUR
Mindestbestellmenge: 2
RSJ800N06TLRohm SemiconductorDescription: MOSFET N-CH 60V 80A LPTS
auf Bestellung 990 Stücke:
Lieferzeit 21-28 Tag (e)
RSJ800N06TLRohm SemiconductorDescription: MOSFET N-CH 60V 80A LPTS
auf Bestellung 1000 Stücke:
Lieferzeit 21-28 Tag (e)
RSJ800N06TLROHM SemiconductorMOSFET Low Power MCU; LCD 8x64, 48Kbyte ROM, TQFP128
Produkt ist nicht verfügbar
RSJMPR10Red Lion ControlsDescription: RELAY SYSTEM 2 POS JUMPER - RED
Produkt ist nicht verfügbar
RSJMPR20Red Lion ControlsDescription: RELAY SYSTEM 2 POS JUMPER - BLUE
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RSJMPR30Red Lion ControlsDescription: RELAY SYSTEM 2 POS JUMPER - GREY
Produkt ist nicht verfügbar