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BZX38450-C4V3-QX BZX38450-C4V3-QX Nexperia USA Inc. BZX38450-Q_SER.pdf Description: BZX38450-C4V3-Q/SOD323/SOD2
Packaging: Tape & Reel (TR)
Tolerance: ±5%
Package / Case: SC-76, SOD-323
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TA)
Voltage - Zener (Nom) (Vz): 4.3 V
Impedance (Max) (Zzt): 95 Ohms
Supplier Device Package: SOD-323
Part Status: Active
Power - Max: 300 mW
Voltage - Forward (Vf) (Max) @ If: 900 mV @ 10 mA
Current - Reverse Leakage @ Vr: 4 µA @ 2 V
auf Bestellung 30000 Stücke:
Lieferzeit 21-28 Tag (e)
3000+0.11 EUR
6000+ 0.096 EUR
15000+ 0.081 EUR
30000+ 0.077 EUR
Mindestbestellmenge: 3000
BZX38450-C4V3-QX BZX38450-C4V3-QX Nexperia USA Inc. BZX38450-Q_SER.pdf Description: BZX38450-C4V3-Q/SOD323/SOD2
Packaging: Cut Tape (CT)
Tolerance: ±5%
Package / Case: SC-76, SOD-323
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TA)
Voltage - Zener (Nom) (Vz): 4.3 V
Impedance (Max) (Zzt): 95 Ohms
Supplier Device Package: SOD-323
Part Status: Active
Power - Max: 300 mW
Voltage - Forward (Vf) (Max) @ If: 900 mV @ 10 mA
Current - Reverse Leakage @ Vr: 4 µA @ 2 V
auf Bestellung 30000 Stücke:
Lieferzeit 21-28 Tag (e)
42+0.62 EUR
51+ 0.51 EUR
100+ 0.27 EUR
500+ 0.18 EUR
1000+ 0.12 EUR
Mindestbestellmenge: 42
BZX8850S-C6V8-QYL BZX8850S-C6V8-QYL Nexperia USA Inc. BZX8850S-Q_SER.pdf Description: BZX8850S-C6V8-Q/SOD882BD/XSON2
Packaging: Tape & Reel (TR)
Tolerance: ±5%
Package / Case: SOD-882
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TA)
Voltage - Zener (Nom) (Vz): 6.8 V
Impedance (Max) (Zzt): 15 Ohms
Supplier Device Package: DFN1006BD-2
Part Status: Active
Power - Max: 365 mW
Voltage - Forward (Vf) (Max) @ If: 900 mV @ 10 mA
Current - Reverse Leakage @ Vr: 100 nA @ 5.1 V
Produkt ist nicht verfügbar
BZX8850S-C6V8-QYL BZX8850S-C6V8-QYL Nexperia USA Inc. BZX8850S-Q_SER.pdf Description: BZX8850S-C6V8-Q/SOD882BD/XSON2
Packaging: Cut Tape (CT)
Tolerance: ±5%
Package / Case: SOD-882
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TA)
Voltage - Zener (Nom) (Vz): 6.8 V
Impedance (Max) (Zzt): 15 Ohms
Supplier Device Package: DFN1006BD-2
Part Status: Active
Power - Max: 365 mW
Voltage - Forward (Vf) (Max) @ If: 900 mV @ 10 mA
Current - Reverse Leakage @ Vr: 100 nA @ 5.1 V
Produkt ist nicht verfügbar
BUK724R5-30C,118 BUK724R5-30C,118 Nexperia USA Inc. BUK724R5-30C.pdf Description: MOSFET N-CH 30V 75A DPAK
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 75A (Tc)
Rds On (Max) @ Id, Vgs: 4.5mOhm @ 25A, 10V
Power Dissipation (Max): 157W (Tc)
Vgs(th) (Max) @ Id: 4V @ 1mA
Supplier Device Package: DPAK
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 62 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3760 pF @ 25 V
Produkt ist nicht verfügbar
BUK724R5-30C,118 BUK724R5-30C,118 Nexperia USA Inc. BUK724R5-30C.pdf Description: MOSFET N-CH 30V 75A DPAK
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 75A (Tc)
Rds On (Max) @ Id, Vgs: 4.5mOhm @ 25A, 10V
Power Dissipation (Max): 157W (Tc)
Vgs(th) (Max) @ Id: 4V @ 1mA
Supplier Device Package: DPAK
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 62 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3760 pF @ 25 V
Produkt ist nicht verfügbar
PSMN3R0-60ES,127 PSMN3R0-60ES,127 Nexperia USA Inc. PSMN3R0-60ES.pdf Description: MOSFET N-CH 60V 100A I2PAK
Packaging: Bulk
Package / Case: TO-262-3 Long Leads, I²Pak, TO-262AA
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 100A (Tc)
Rds On (Max) @ Id, Vgs: 3mOhm @ 25A, 10V
Power Dissipation (Max): 306W (Tc)
Vgs(th) (Max) @ Id: 4V @ 1mA
Supplier Device Package: I2PAK
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 130 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 8079 pF @ 30 V
auf Bestellung 2665 Stücke:
Lieferzeit 21-28 Tag (e)
359+2.18 EUR
Mindestbestellmenge: 359
BZX84W-C22X BZX84W-C22X Nexperia USA Inc. BZX84W_SER.pdf Description: DIODE ZENER 22V 275MW SOT323
Tolerance: ±5%
Packaging: Tape & Reel (TR)
Package / Case: SC-70, SOT-323
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Voltage - Zener (Nom) (Vz): 22 V
Impedance (Max) (Zzt): 55 Ohms
Supplier Device Package: SOT-323
Part Status: Active
Power - Max: 275 mW
Voltage - Forward (Vf) (Max) @ If: 900 mV @ 10 mA
Current - Reverse Leakage @ Vr: 50 nA @ 15.4 V
Produkt ist nicht verfügbar
BZX84W-C22X BZX84W-C22X Nexperia USA Inc. BZX84W_SER.pdf Description: DIODE ZENER 22V 275MW SOT323
Tolerance: ±5%
Packaging: Cut Tape (CT)
Package / Case: SC-70, SOT-323
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Voltage - Zener (Nom) (Vz): 22 V
Impedance (Max) (Zzt): 55 Ohms
Supplier Device Package: SOT-323
Part Status: Active
Power - Max: 275 mW
Voltage - Forward (Vf) (Max) @ If: 900 mV @ 10 mA
Current - Reverse Leakage @ Vr: 50 nA @ 15.4 V
auf Bestellung 1039 Stücke:
Lieferzeit 21-28 Tag (e)
63+0.42 EUR
93+ 0.28 EUR
171+ 0.15 EUR
500+ 0.12 EUR
1000+ 0.083 EUR
Mindestbestellmenge: 63
PMEG100T20ELXD-QX PMEG100T20ELXD-QX Nexperia USA Inc. PMEG100T20ELXD-Q.pdf Description: DIODE SCHOTTKY 100V 2A SOD323HP
Packaging: Tape & Reel (TR)
Package / Case: 2-SMD, Flat Lead
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 6 ns
Technology: Schottky
Capacitance @ Vr, F: 120pF @ 1V, 1MHz
Current - Average Rectified (Io): 2A
Supplier Device Package: SOD323HP
Operating Temperature - Junction: 175°C
Grade: Automotive
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 880 mV @ 2 A
Current - Reverse Leakage @ Vr: 600 nA @ 100 V
Qualification: AEC-Q101
Produkt ist nicht verfügbar
PMEG150G20ELR-QX PMEG150G20ELR-QX Nexperia USA Inc. Description: DIODE GEN PURP 150V 2A SOD123W
Packaging: Tape & Reel (TR)
Package / Case: SOD-123W
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 14 ns
Technology: SiGe (Silicon Germanium)
Capacitance @ Vr, F: 70pF @ 1V, 1MHz
Current - Average Rectified (Io): 2A
Supplier Device Package: SOD-123W
Operating Temperature - Junction: 175°C
Grade: Automotive
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 150 V
Voltage - Forward (Vf) (Max) @ If: 850 mV @ 2 A
Current - Reverse Leakage @ Vr: 30 nA @ 150 V
Qualification: AEC-Q101
Produkt ist nicht verfügbar
PMEG150G20ELR-QX PMEG150G20ELR-QX Nexperia USA Inc. Description: DIODE GEN PURP 150V 2A SOD123W
Packaging: Cut Tape (CT)
Package / Case: SOD-123W
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 14 ns
Technology: SiGe (Silicon Germanium)
Capacitance @ Vr, F: 70pF @ 1V, 1MHz
Current - Average Rectified (Io): 2A
Supplier Device Package: SOD-123W
Operating Temperature - Junction: 175°C
Grade: Automotive
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 150 V
Voltage - Forward (Vf) (Max) @ If: 850 mV @ 2 A
Current - Reverse Leakage @ Vr: 30 nA @ 150 V
Qualification: AEC-Q101
auf Bestellung 2460 Stücke:
Lieferzeit 21-28 Tag (e)
24+1.09 EUR
31+ 0.85 EUR
100+ 0.51 EUR
500+ 0.47 EUR
1000+ 0.32 EUR
Mindestbestellmenge: 24
PMEG60T10ELXD-QX PMEG60T10ELXD-QX Nexperia USA Inc. PMEG60T10ELXD-Q.pdf Description: DIODE SCHOTTKY 60V 1A SOD323HP
Packaging: Tape & Reel (TR)
Package / Case: 2-SMD, Flat Lead
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 7 ns
Technology: Schottky
Capacitance @ Vr, F: 155pF @ 1V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: SOD323HP
Operating Temperature - Junction: 175°C
Grade: Automotive
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 60 V
Voltage - Forward (Vf) (Max) @ If: 640 mV @ 1 A
Current - Reverse Leakage @ Vr: 400 nA @ 60 V
Qualification: AEC-Q101
Produkt ist nicht verfügbar
PMEG60T20ELXD-QX PMEG60T20ELXD-QX Nexperia USA Inc. PMEG60T20ELXD-Q.pdf Description: DIODE SCHOTTKY 60V 2A SOD323HP
Packaging: Tape & Reel (TR)
Package / Case: 2-SMD, Flat Lead
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 8 ns
Technology: Schottky
Capacitance @ Vr, F: 210pF @ 1V, 1MHz
Current - Average Rectified (Io): 2A
Supplier Device Package: SOD323HP
Operating Temperature - Junction: 175°C
Grade: Automotive
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 60 V
Voltage - Forward (Vf) (Max) @ If: 700 mV @ 2 A
Current - Reverse Leakage @ Vr: 470 nA @ 60 V
Qualification: AEC-Q101
auf Bestellung 4500 Stücke:
Lieferzeit 21-28 Tag (e)
4500+0.2 EUR
Mindestbestellmenge: 4500
PMEG120G20ELR-QX PMEG120G20ELR-QX Nexperia USA Inc. Description: DIODE GEN PURP 120V 2A SOD123W
Packaging: Tape & Reel (TR)
Package / Case: SOD-123W
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 11 ns
Technology: SiGe (Silicon Germanium)
Capacitance @ Vr, F: 75pF @ 1V, 1MHz
Current - Average Rectified (Io): 2A
Supplier Device Package: SOD-123W
Operating Temperature - Junction: 175°C
Grade: Automotive
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 120 V
Voltage - Forward (Vf) (Max) @ If: 840 mV @ 2 A
Current - Reverse Leakage @ Vr: 30 nA @ 120 V
Qualification: AEC-Q101
Produkt ist nicht verfügbar
PMEG120G20ELR-QX PMEG120G20ELR-QX Nexperia USA Inc. Description: DIODE GEN PURP 120V 2A SOD123W
Packaging: Cut Tape (CT)
Package / Case: SOD-123W
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 11 ns
Technology: SiGe (Silicon Germanium)
Capacitance @ Vr, F: 75pF @ 1V, 1MHz
Current - Average Rectified (Io): 2A
Supplier Device Package: SOD-123W
Operating Temperature - Junction: 175°C
Grade: Automotive
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 120 V
Voltage - Forward (Vf) (Max) @ If: 840 mV @ 2 A
Current - Reverse Leakage @ Vr: 30 nA @ 120 V
Qualification: AEC-Q101
auf Bestellung 2060 Stücke:
Lieferzeit 21-28 Tag (e)
25+1.07 EUR
32+ 0.84 EUR
100+ 0.5 EUR
500+ 0.47 EUR
1000+ 0.32 EUR
Mindestbestellmenge: 25
PMEG120G10ELR-QX PMEG120G10ELR-QX Nexperia USA Inc. Description: DIODE GEN PURP 120V 1A SOD123W
Packaging: Tape & Reel (TR)
Package / Case: SOD-123W
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 12 ns
Technology: SiGe (Silicon Germanium)
Capacitance @ Vr, F: 36pF @ 1V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: SOD-123W
Operating Temperature - Junction: 175°C
Grade: Automotive
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 120 V
Voltage - Forward (Vf) (Max) @ If: 840 mV @ 1 A
Current - Reverse Leakage @ Vr: 30 nA @ 120 V
Qualification: AEC-Q101
auf Bestellung 9000 Stücke:
Lieferzeit 21-28 Tag (e)
3000+0.23 EUR
6000+ 0.22 EUR
9000+ 0.2 EUR
Mindestbestellmenge: 3000
PMEG120G10ELR-QX PMEG120G10ELR-QX Nexperia USA Inc. Description: DIODE GEN PURP 120V 1A SOD123W
Packaging: Cut Tape (CT)
Package / Case: SOD-123W
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 12 ns
Technology: SiGe (Silicon Germanium)
Capacitance @ Vr, F: 36pF @ 1V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: SOD-123W
Operating Temperature - Junction: 175°C
Grade: Automotive
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 120 V
Voltage - Forward (Vf) (Max) @ If: 840 mV @ 1 A
Current - Reverse Leakage @ Vr: 30 nA @ 120 V
Qualification: AEC-Q101
auf Bestellung 10573 Stücke:
Lieferzeit 21-28 Tag (e)
32+0.83 EUR
40+ 0.65 EUR
100+ 0.39 EUR
500+ 0.36 EUR
1000+ 0.25 EUR
Mindestbestellmenge: 32
PMEG100T30ELPX PMEG100T30ELPX Nexperia USA Inc. PMEG100T30ELP.pdf Description: DIODE SCHOTT 100V 3A SOD128/CFP5
Packaging: Tape & Reel (TR)
Package / Case: SOD-128
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 12.5 ns
Technology: Schottky
Capacitance @ Vr, F: 300pF @ 1V, 1MHz
Current - Average Rectified (Io): 3A
Supplier Device Package: SOD-128/CFP5
Operating Temperature - Junction: 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 800 mV @ 3 A
Current - Reverse Leakage @ Vr: 1.75 µA @ 100 V
auf Bestellung 6000 Stücke:
Lieferzeit 21-28 Tag (e)
3000+0.51 EUR
6000+ 0.48 EUR
Mindestbestellmenge: 3000
PMEG150G20ELP-QX PMEG150G20ELP-QX Nexperia USA Inc. Description: DIODE SIGE 150V 2A SOD128/CFP5
Packaging: Tape & Reel (TR)
Package / Case: SOD-128
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 14 ns
Technology: SiGe (Silicon Germanium)
Capacitance @ Vr, F: 70pF @ 1V, 1MHz
Current - Average Rectified (Io): 2A
Supplier Device Package: SOD-128/CFP5
Operating Temperature - Junction: 175°C
Grade: Automotive
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 150 V
Voltage - Forward (Vf) (Max) @ If: 850 mV @ 2 A
Current - Reverse Leakage @ Vr: 30 nA @ 150 V
Qualification: AEC-Q101
Produkt ist nicht verfügbar
PMEG150G20ELP-QX PMEG150G20ELP-QX Nexperia USA Inc. Description: DIODE SIGE 150V 2A SOD128/CFP5
Packaging: Cut Tape (CT)
Package / Case: SOD-128
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 14 ns
Technology: SiGe (Silicon Germanium)
Capacitance @ Vr, F: 70pF @ 1V, 1MHz
Current - Average Rectified (Io): 2A
Supplier Device Package: SOD-128/CFP5
Operating Temperature - Junction: 175°C
Grade: Automotive
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 150 V
Voltage - Forward (Vf) (Max) @ If: 850 mV @ 2 A
Current - Reverse Leakage @ Vr: 30 nA @ 150 V
Qualification: AEC-Q101
auf Bestellung 2907 Stücke:
Lieferzeit 21-28 Tag (e)
28+0.96 EUR
31+ 0.84 EUR
100+ 0.58 EUR
500+ 0.46 EUR
1000+ 0.37 EUR
Mindestbestellmenge: 28
PMEG120G30ELP-QX PMEG120G30ELP-QX Nexperia USA Inc. Description: DIODE GP 120V 3A SOD128/CFP5
Packaging: Tape & Reel (TR)
Package / Case: SOD-128
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 11 ns
Technology: SiGe (Silicon Germanium)
Capacitance @ Vr, F: 103pF @ 1V, 1MHz
Current - Average Rectified (Io): 3A
Supplier Device Package: SOD-128/CFP5
Operating Temperature - Junction: 175°C
Grade: Automotive
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 120 V
Voltage - Forward (Vf) (Max) @ If: 840 mV @ 3 A
Current - Reverse Leakage @ Vr: 30 nA @ 120 V
Qualification: AEC-Q101
Produkt ist nicht verfügbar
PMEG120G30ELP-QX PMEG120G30ELP-QX Nexperia USA Inc. Description: DIODE GP 120V 3A SOD128/CFP5
Packaging: Cut Tape (CT)
Package / Case: SOD-128
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 11 ns
Technology: SiGe (Silicon Germanium)
Capacitance @ Vr, F: 103pF @ 1V, 1MHz
Current - Average Rectified (Io): 3A
Supplier Device Package: SOD-128/CFP5
Operating Temperature - Junction: 175°C
Grade: Automotive
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 120 V
Voltage - Forward (Vf) (Max) @ If: 840 mV @ 3 A
Current - Reverse Leakage @ Vr: 30 nA @ 120 V
Qualification: AEC-Q101
auf Bestellung 2127 Stücke:
Lieferzeit 21-28 Tag (e)
23+1.14 EUR
27+ 0.97 EUR
100+ 0.67 EUR
500+ 0.53 EUR
1000+ 0.43 EUR
Mindestbestellmenge: 23
PMEG100T10ELXDX PMEG100T10ELXDX Nexperia USA Inc. PMEG100T10ELXD.pdf Description: DIODE SCHOTTKY 100V 1A SOD323HP
Packaging: Tape & Reel (TR)
Package / Case: 2-SMD, Flat Lead
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 6 ns
Technology: Schottky
Capacitance @ Vr, F: 95pF @ 1V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: SOD323HP
Operating Temperature - Junction: 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 795 mV @ 1 A
Current - Reverse Leakage @ Vr: 500 nA @ 100 V
auf Bestellung 31500 Stücke:
Lieferzeit 21-28 Tag (e)
4500+0.21 EUR
9000+ 0.18 EUR
Mindestbestellmenge: 4500
PMEG100T10ELXDX PMEG100T10ELXDX Nexperia USA Inc. PMEG100T10ELXD.pdf Description: DIODE SCHOTTKY 100V 1A SOD323HP
Packaging: Cut Tape (CT)
Package / Case: 2-SMD, Flat Lead
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 6 ns
Technology: Schottky
Capacitance @ Vr, F: 95pF @ 1V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: SOD323HP
Operating Temperature - Junction: 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 795 mV @ 1 A
Current - Reverse Leakage @ Vr: 500 nA @ 100 V
auf Bestellung 36708 Stücke:
Lieferzeit 21-28 Tag (e)
28+0.94 EUR
39+ 0.67 EUR
100+ 0.34 EUR
500+ 0.3 EUR
1000+ 0.23 EUR
2000+ 0.21 EUR
Mindestbestellmenge: 28
PMEG150G10ELR-QX PMEG150G10ELR-QX Nexperia USA Inc. Description: DIODE GEN PURP 150V 1A SOD123W
Packaging: Tape & Reel (TR)
Package / Case: SOD-123W
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 15 ns
Technology: SiGe (Silicon Germanium)
Capacitance @ Vr, F: 34pF @ 1V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: SOD-123W
Operating Temperature - Junction: 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 150 V
Voltage - Forward (Vf) (Max) @ If: 850 mV @ 1 A
Current - Reverse Leakage @ Vr: 30 nA @ 150 V
Grade: Automotive
Qualification: AEC-Q101
Produkt ist nicht verfügbar
PMEG150G10ELR-QX PMEG150G10ELR-QX Nexperia USA Inc. Description: DIODE GEN PURP 150V 1A SOD123W
Packaging: Cut Tape (CT)
Package / Case: SOD-123W
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 15 ns
Technology: SiGe (Silicon Germanium)
Capacitance @ Vr, F: 34pF @ 1V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: SOD-123W
Operating Temperature - Junction: 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 150 V
Voltage - Forward (Vf) (Max) @ If: 850 mV @ 1 A
Current - Reverse Leakage @ Vr: 30 nA @ 150 V
Grade: Automotive
Qualification: AEC-Q101
auf Bestellung 2790 Stücke:
Lieferzeit 21-28 Tag (e)
30+0.88 EUR
39+ 0.68 EUR
100+ 0.41 EUR
500+ 0.38 EUR
1000+ 0.26 EUR
Mindestbestellmenge: 30
PMEG120G20ELP-QX PMEG120G20ELP-QX Nexperia USA Inc. Description: DIODE GP 120V 2A SOD128/CFP5
Packaging: Tape & Reel (TR)
Package / Case: SOD-128
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 11 ns
Technology: SiGe (Silicon Germanium)
Capacitance @ Vr, F: 75pF @ 1V, 1MHz
Current - Average Rectified (Io): 2A
Supplier Device Package: SOD-128/CFP5
Operating Temperature - Junction: 175°C
Grade: Automotive
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 120 V
Voltage - Forward (Vf) (Max) @ If: 840 mV @ 2 A
Current - Reverse Leakage @ Vr: 30 nA @ 120 V
Qualification: AEC-Q101
Produkt ist nicht verfügbar
PMEG120G20ELP-QX PMEG120G20ELP-QX Nexperia USA Inc. Description: DIODE GP 120V 2A SOD128/CFP5
Packaging: Cut Tape (CT)
Package / Case: SOD-128
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 11 ns
Technology: SiGe (Silicon Germanium)
Capacitance @ Vr, F: 75pF @ 1V, 1MHz
Current - Average Rectified (Io): 2A
Supplier Device Package: SOD-128/CFP5
Operating Temperature - Junction: 175°C
Grade: Automotive
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 120 V
Voltage - Forward (Vf) (Max) @ If: 840 mV @ 2 A
Current - Reverse Leakage @ Vr: 30 nA @ 120 V
Qualification: AEC-Q101
auf Bestellung 53 Stücke:
Lieferzeit 21-28 Tag (e)
28+0.96 EUR
32+ 0.82 EUR
Mindestbestellmenge: 28
PRMB11Z PRMB11Z Nexperia USA Inc. PRMB11.pdf Description: TRANS PREBIAS 2PNP 50V DFN1412-6
Packaging: Bulk
Package / Case: 6-XFDFN Exposed Pad
Mounting Type: Surface Mount
Transistor Type: 2 PNP - Pre-Biased (Dual)
Power - Max: 480mW
Current - Collector (Ic) (Max): 100mA
Voltage - Collector Emitter Breakdown (Max): 50V
Vce Saturation (Max) @ Ib, Ic: 150mV @ 500µA, 10mA
Current - Collector Cutoff (Max): 100nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 30 @ 5mA, 5V
Frequency - Transition: 180MHz
Resistor - Base (R1): 10kOhms
Resistor - Emitter Base (R2): 10kOhms
Supplier Device Package: DFN1412-6
Part Status: Active
Grade: Automotive
Qualification: AEC-Q101
auf Bestellung 144150 Stücke:
Lieferzeit 21-28 Tag (e)
9072+0.072 EUR
Mindestbestellmenge: 9072
BZX84-C3V6/DG/B4R BZX84-C3V6/DG/B4R Nexperia USA Inc. PHGLS29437-1.pdf?t.download=true&u=5oefqw Description: DIODE ZENER 3.6V 250MW TO236AB
Produkt ist nicht verfügbar
BZX84-C3V6/DG/B3:2 BZX84-C3V6/DG/B3:2 Nexperia USA Inc. PHGLS29437-1.pdf?t.download=true&u=5oefqw Description: DIODE ZENER 3.6V 250MW TO236AB
Produkt ist nicht verfügbar
BZX84-C3V6/DG/B3,2 BZX84-C3V6/DG/B3,2 Nexperia USA Inc. PHGLS29437-1.pdf?t.download=true&u=5oefqw Description: DIODE ZENER 3.6V 250MW TO236AB
Produkt ist nicht verfügbar
BZX84-C3V6/DG/B4VL BZX84-C3V6/DG/B4VL Nexperia USA Inc. PHGLS29437-1.pdf?t.download=true&u=5oefqw Description: DIODE ZENER 3.6V 250MW TO236AB
Produkt ist nicht verfügbar
74HC4852BQ-Q100115 74HC4852BQ-Q100115 Nexperia USA Inc. 74HC_HCT4852_Q100.pdf Description: NEXPERIA 74HC4852BQ-Q100 - SINGL
Produkt ist nicht verfügbar
PMEG6020ETR-QX PMEG6020ETR-QX Nexperia USA Inc. Description: DIODE SCHOTTKY 60V 2A SOD123W
Packaging: Tape & Reel (TR)
Package / Case: SOD-123W
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 8.5 ns
Technology: Schottky
Capacitance @ Vr, F: 240pF @ 1V, 1MHz
Current - Average Rectified (Io): 2A
Supplier Device Package: SOD-123W
Operating Temperature - Junction: 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 60 V
Voltage - Forward (Vf) (Max) @ If: 530 mV @ 2 A
Current - Reverse Leakage @ Vr: 150 µA @ 60 V
Grade: Automotive
Qualification: AEC-Q101
auf Bestellung 3000 Stücke:
Lieferzeit 21-28 Tag (e)
3000+0.24 EUR
Mindestbestellmenge: 3000
PMEG6020AELP-QX PMEG6020AELP-QX Nexperia USA Inc. PMEG6020AELP-Q.pdf Description: DIODE SCHOTTKY 60V 2A SOD128
Packaging: Tape & Reel (TR)
Package / Case: SOD-128
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 9 ns
Technology: Schottky
Capacitance @ Vr, F: 220pF @ 1V, 1MHz
Current - Average Rectified (Io): 2A
Supplier Device Package: SOD-128/CFP5
Operating Temperature - Junction: 175°C
Voltage - DC Reverse (Vr) (Max): 60 V
Voltage - Forward (Vf) (Max) @ If: 670 mV @ 2 A
Current - Reverse Leakage @ Vr: 700 nA @ 60 V
Grade: Automotive
Qualification: AEC-Q101
Produkt ist nicht verfügbar
PMEG6020ETP-QX PMEG6020ETP-QX Nexperia USA Inc. PMEG6020ETP-Q.pdf Description: DIODE SCHOTTKY 60V 2A SOD128
Packaging: Tape & Reel (TR)
Package / Case: SOD-128
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 8.6 ns
Technology: Schottky
Capacitance @ Vr, F: 240pF @ 1V, 1MHz
Current - Average Rectified (Io): 2A
Supplier Device Package: SOD-128/CFP5
Operating Temperature - Junction: 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 60 V
Voltage - Forward (Vf) (Max) @ If: 530 mV @ 2 A
Current - Reverse Leakage @ Vr: 150 µA @ 60 V
Grade: Automotive
Qualification: AEC-Q101
auf Bestellung 6000 Stücke:
Lieferzeit 21-28 Tag (e)
3000+0.32 EUR
6000+ 0.3 EUR
Mindestbestellmenge: 3000
PMEG6020ELR-QX PMEG6020ELR-QX Nexperia USA Inc. Description: DIODE SCHOTTKY 60V 2A SOD123W
Packaging: Tape & Reel (TR)
Package / Case: SOD-123W
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 4.5 ns
Technology: Schottky
Capacitance @ Vr, F: 110pF @ 1V, 1MHz
Current - Average Rectified (Io): 2A
Supplier Device Package: SOD-123W
Operating Temperature - Junction: 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 60 V
Voltage - Forward (Vf) (Max) @ If: 760 mV @ 2 A
Current - Reverse Leakage @ Vr: 300 nA @ 60 V
Grade: Automotive
Qualification: AEC-Q101
Produkt ist nicht verfügbar
PMEG6020AELR-QX PMEG6020AELR-QX Nexperia USA Inc. PMEG6020AELR-Q.pdf Description: DIODE SCHOTTKY 60V 2A SOD123W
Packaging: Tape & Reel (TR)
Package / Case: SOD-123W
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 9 ns
Technology: Schottky
Capacitance @ Vr, F: 220pF @ 1V, 1MHz
Current - Average Rectified (Io): 2A
Supplier Device Package: SOD-123W
Operating Temperature - Junction: 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 60 V
Voltage - Forward (Vf) (Max) @ If: 670 mV @ 2 A
Current - Reverse Leakage @ Vr: 700 nA @ 60 V
Grade: Automotive
Qualification: AEC-Q101
auf Bestellung 3000 Stücke:
Lieferzeit 21-28 Tag (e)
3000+0.28 EUR
Mindestbestellmenge: 3000
PMEG6020ER-QX PMEG6020ER-QX Nexperia USA Inc. Description: DIODE SCHOTTKY 60V 2A SOD123W
Packaging: Tape & Reel (TR)
Package / Case: SOD-123W
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Capacitance @ Vr, F: 240pF @ 1V, 1MHz
Current - Average Rectified (Io): 2A
Supplier Device Package: SOD-123W
Operating Temperature - Junction: 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 60 V
Voltage - Forward (Vf) (Max) @ If: 530 mV @ 2 A
Current - Reverse Leakage @ Vr: 150 µA @ 60 V
Grade: Automotive
Qualification: AEC-Q101
auf Bestellung 12000 Stücke:
Lieferzeit 21-28 Tag (e)
3000+0.23 EUR
6000+ 0.22 EUR
9000+ 0.2 EUR
Mindestbestellmenge: 3000
PMEG6020EP-QX PMEG6020EP-QX Nexperia USA Inc. PMEG6020EP-Q.pdf Description: DIODE SCHOTTKY 60V 2A SOD128
Packaging: Tape & Reel (TR)
Package / Case: SOD-128
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Capacitance @ Vr, F: 240pF @ 1V, 1MHz
Current - Average Rectified (Io): 2A
Supplier Device Package: SOD-128/CFP5
Operating Temperature - Junction: 150°C
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 60 V
Voltage - Forward (Vf) (Max) @ If: 530 mV @ 2 A
Current - Reverse Leakage @ Vr: 150 µA @ 60 V
Qualification: AEC-Q101
Produkt ist nicht verfügbar
PDTC124EQAZ PDTC124EQAZ Nexperia USA Inc. PDTC143_114_124_144EQA_SER.pdf Description: TRANS PREBIAS NPN 50V 0.1A 3DFN
Packaging: Bulk
Package / Case: 3-XDFN Exposed Pad
Mounting Type: Surface Mount
Transistor Type: NPN - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 150mV @ 500µA, 10mA
Current - Collector Cutoff (Max): 1µA
DC Current Gain (hFE) (Min) @ Ic, Vce: 60 @ 5mA, 5V
Supplier Device Package: DFN1010D-3
Part Status: Active
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 280 mW
Frequency - Transition: 230 MHz
Resistor - Base (R1): 22 kOhms
Resistor - Emitter Base (R2): 22 kOhms
auf Bestellung 45000 Stücke:
Lieferzeit 21-28 Tag (e)
9489+0.074 EUR
Mindestbestellmenge: 9489
74LVC2G126GS,115 74LVC2G126GS,115 Nexperia USA Inc. 74LVC2G126.pdf Description: NEXPERIA 74LVC2G126 - DUAL BUS B
auf Bestellung 92218 Stücke:
Lieferzeit 21-28 Tag (e)
3256+0.24 EUR
Mindestbestellmenge: 3256
PZU9.1B1,115 PZU9.1B1,115 Nexperia USA Inc. PHGLS19743-1.pdf?t.download=true&u=5oefqw Description: DIODE ZENER 9.1V 310MW SOD323F
Produkt ist nicht verfügbar
PZU9.1B1,115 PZU9.1B1,115 Nexperia USA Inc. PHGLS19743-1.pdf?t.download=true&u=5oefqw Description: DIODE ZENER 9.1V 310MW SOD323F
Produkt ist nicht verfügbar
PZU9.1B1,115 PZU9.1B1,115 Nexperia USA Inc. PHGLS19743-1.pdf?t.download=true&u=5oefqw Description: DIODE ZENER 9.1V 310MW SOD323F
auf Bestellung 141000 Stücke:
Lieferzeit 21-28 Tag (e)
9584+0.076 EUR
Mindestbestellmenge: 9584
74CBTLV3126BQ115 74CBTLV3126BQ115 Nexperia USA Inc. 74CBTLV3126.pdf Description: NOW NEXPERIA 74CBTLV3126BQ - BUS
Produkt ist nicht verfügbar
74CBTLV3126PW-Q100118 74CBTLV3126PW-Q100118 Nexperia USA Inc. 74CBTLV3126_Q100.pdf Description: BUS DRIVER, CBT SERIES
Produkt ist nicht verfügbar
74HC2GU04GW 74HC2GU04GW Nexperia USA Inc. PHGLS14425-1.pdf?t.download=true&u=5oefqw Description: IC INVERTER 2CH 2-INP 6TSSOP
Produkt ist nicht verfügbar
74HC2G00GD,125 74HC2G00GD,125 Nexperia USA Inc. 74HC_HCT2G00.pdf Description: IC GATE NAND 2CH 2-INP 8XSON
Packaging: Tape & Reel (TR)
Package / Case: 8-XFDFN
Mounting Type: Surface Mount
Logic Type: NAND Gate
Operating Temperature: -40°C ~ 125°C
Voltage - Supply: 2V ~ 6V
Current - Output High, Low: 5.2mA, 5.2mA
Number of Inputs: 2
Supplier Device Package: 8-XSON (2x3)
Input Logic Level - High: 1.5V ~ 4.2V
Input Logic Level - Low: 0.5V ~ 1.8V
Max Propagation Delay @ V, Max CL: 7ns @ 6V, 50pF
Part Status: Obsolete
Number of Circuits: 2
Current - Quiescent (Max): 20 µA
Produkt ist nicht verfügbar
74HC2G00GD,125 74HC2G00GD,125 Nexperia USA Inc. 74HC_HCT2G00.pdf Description: IC GATE NAND 2CH 2-INP 8XSON
Packaging: Cut Tape (CT)
Package / Case: 8-XFDFN
Mounting Type: Surface Mount
Logic Type: NAND Gate
Operating Temperature: -40°C ~ 125°C
Voltage - Supply: 2V ~ 6V
Current - Output High, Low: 5.2mA, 5.2mA
Number of Inputs: 2
Supplier Device Package: 8-XSON (2x3)
Input Logic Level - High: 1.5V ~ 4.2V
Input Logic Level - Low: 0.5V ~ 1.8V
Max Propagation Delay @ V, Max CL: 7ns @ 6V, 50pF
Part Status: Obsolete
Number of Circuits: 2
Current - Quiescent (Max): 20 µA
Produkt ist nicht verfügbar
PMPB16R5XNEX PMPB16R5XNEX Nexperia USA Inc. PMPB16R5XNE.pdf Description: PMPB16R5XNE - 30 V, N-CHANNEL TR
Packaging: Tape & Reel (TR)
Package / Case: 6-UDFN Exposed Pad
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 7A (Ta)
Rds On (Max) @ Id, Vgs: 19mOhm @ 4.5A, 4.5V
Power Dissipation (Max): 1.7W (Ta), 12.5W (Tc)
Vgs(th) (Max) @ Id: 900mV @ 250µA
Supplier Device Package: DFN2020M-6
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4.5V
Vgs (Max): ±12V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 18 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 1150 pF @ 15 V
auf Bestellung 6000 Stücke:
Lieferzeit 21-28 Tag (e)
3000+0.31 EUR
6000+ 0.3 EUR
Mindestbestellmenge: 3000
PMPB16R5XNEX PMPB16R5XNEX Nexperia USA Inc. PMPB16R5XNE.pdf Description: PMPB16R5XNE - 30 V, N-CHANNEL TR
Packaging: Cut Tape (CT)
Package / Case: 6-UDFN Exposed Pad
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 7A (Ta)
Rds On (Max) @ Id, Vgs: 19mOhm @ 4.5A, 4.5V
Power Dissipation (Max): 1.7W (Ta), 12.5W (Tc)
Vgs(th) (Max) @ Id: 900mV @ 250µA
Supplier Device Package: DFN2020M-6
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4.5V
Vgs (Max): ±12V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 18 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 1150 pF @ 15 V
auf Bestellung 8450 Stücke:
Lieferzeit 21-28 Tag (e)
23+1.14 EUR
30+ 0.89 EUR
100+ 0.54 EUR
500+ 0.5 EUR
1000+ 0.34 EUR
Mindestbestellmenge: 23
PMPB12R7EPX PMPB12R7EPX Nexperia USA Inc. PMPB12R7EP.pdf Description: PMPB12R7EP - 30 V, P-CHANNEL TRE
Packaging: Tape & Reel (TR)
Package / Case: 6-UDFN Exposed Pad
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 8.7A (Ta)
Rds On (Max) @ Id, Vgs: 15.5mOhm @ 8.7A, 10V
Power Dissipation (Max): 1.9W (Ta), 12.5W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: DFN2020M-6
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 49 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1638 pF @ 15 V
Produkt ist nicht verfügbar
PMPB12R7EPX PMPB12R7EPX Nexperia USA Inc. PMPB12R7EP.pdf Description: PMPB12R7EP - 30 V, P-CHANNEL TRE
Packaging: Cut Tape (CT)
Package / Case: 6-UDFN Exposed Pad
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 8.7A (Ta)
Rds On (Max) @ Id, Vgs: 15.5mOhm @ 8.7A, 10V
Power Dissipation (Max): 1.9W (Ta), 12.5W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: DFN2020M-6
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 49 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1638 pF @ 15 V
auf Bestellung 4615 Stücke:
Lieferzeit 21-28 Tag (e)
24+1.09 EUR
28+ 0.93 EUR
100+ 0.65 EUR
500+ 0.51 EUR
1000+ 0.41 EUR
Mindestbestellmenge: 24
BZX884S-C4V7-QYL BZX884S-C4V7-QYL Nexperia USA Inc. BZX884S-Q_SER.pdf Description: SMALL SIGNAL BIPOLAR IN DFN PACK
Produkt ist nicht verfügbar
74LV4051PW 74LV4051PW Nexperia USA Inc. PHGL-S-A0001696303-1.pdf?t.download=true&u=5oefqw Description: SINGLE-ENDED MULTIPLEXER, 1 FUNC
Produkt ist nicht verfügbar
BUK9MHH-65PNN,518 Nexperia USA Inc. Description: MOSFET 2N-CH 65V 15A 20SO
Packaging: Tape & Reel (TR)
Package / Case: 20-SOIC (0.295", 7.50mm Width)
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 5W (Tc)
Drain to Source Voltage (Vdss): 65V
Current - Continuous Drain (Id) @ 25°C: 15A (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 3643pF @ 25V
Rds On (Max) @ Id, Vgs: 10.6mOhm @ 10A, 10V
Gate Charge (Qg) (Max) @ Vgs: 44.6nC @ 5V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 2V @ 1mA
Supplier Device Package: 20-SO
Part Status: Obsolete
Produkt ist nicht verfügbar
BZX84J-C27,135 BZX84J-C27,135 Nexperia USA Inc. BZX84J_SER.pdf Description: DIODE ZENER 27V 550MW SOD323F
Tolerance: ±5%
Packaging: Tape & Reel (TR)
Package / Case: SC-90, SOD-323F
Mounting Type: Surface Mount
Operating Temperature: -65°C ~ 150°C
Voltage - Zener (Nom) (Vz): 27 V
Impedance (Max) (Zzt): 40 Ohms
Supplier Device Package: SOD-323F
Part Status: Active
Power - Max: 550 mW
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 100 mA
Current - Reverse Leakage @ Vr: 50 nA @ 18.9 V
Produkt ist nicht verfügbar
BZX38450-C4V3-QX BZX38450-Q_SER.pdf
BZX38450-C4V3-QX
Hersteller: Nexperia USA Inc.
Description: BZX38450-C4V3-Q/SOD323/SOD2
Packaging: Tape & Reel (TR)
Tolerance: ±5%
Package / Case: SC-76, SOD-323
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TA)
Voltage - Zener (Nom) (Vz): 4.3 V
Impedance (Max) (Zzt): 95 Ohms
Supplier Device Package: SOD-323
Part Status: Active
Power - Max: 300 mW
Voltage - Forward (Vf) (Max) @ If: 900 mV @ 10 mA
Current - Reverse Leakage @ Vr: 4 µA @ 2 V
auf Bestellung 30000 Stücke:
Lieferzeit 21-28 Tag (e)
Anzahl Preis ohne MwSt
3000+0.11 EUR
6000+ 0.096 EUR
15000+ 0.081 EUR
30000+ 0.077 EUR
Mindestbestellmenge: 3000
BZX38450-C4V3-QX BZX38450-Q_SER.pdf
BZX38450-C4V3-QX
Hersteller: Nexperia USA Inc.
Description: BZX38450-C4V3-Q/SOD323/SOD2
Packaging: Cut Tape (CT)
Tolerance: ±5%
Package / Case: SC-76, SOD-323
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TA)
Voltage - Zener (Nom) (Vz): 4.3 V
Impedance (Max) (Zzt): 95 Ohms
Supplier Device Package: SOD-323
Part Status: Active
Power - Max: 300 mW
Voltage - Forward (Vf) (Max) @ If: 900 mV @ 10 mA
Current - Reverse Leakage @ Vr: 4 µA @ 2 V
auf Bestellung 30000 Stücke:
Lieferzeit 21-28 Tag (e)
Anzahl Preis ohne MwSt
42+0.62 EUR
51+ 0.51 EUR
100+ 0.27 EUR
500+ 0.18 EUR
1000+ 0.12 EUR
Mindestbestellmenge: 42
BZX8850S-C6V8-QYL BZX8850S-Q_SER.pdf
BZX8850S-C6V8-QYL
Hersteller: Nexperia USA Inc.
Description: BZX8850S-C6V8-Q/SOD882BD/XSON2
Packaging: Tape & Reel (TR)
Tolerance: ±5%
Package / Case: SOD-882
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TA)
Voltage - Zener (Nom) (Vz): 6.8 V
Impedance (Max) (Zzt): 15 Ohms
Supplier Device Package: DFN1006BD-2
Part Status: Active
Power - Max: 365 mW
Voltage - Forward (Vf) (Max) @ If: 900 mV @ 10 mA
Current - Reverse Leakage @ Vr: 100 nA @ 5.1 V
Produkt ist nicht verfügbar
BZX8850S-C6V8-QYL BZX8850S-Q_SER.pdf
BZX8850S-C6V8-QYL
Hersteller: Nexperia USA Inc.
Description: BZX8850S-C6V8-Q/SOD882BD/XSON2
Packaging: Cut Tape (CT)
Tolerance: ±5%
Package / Case: SOD-882
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TA)
Voltage - Zener (Nom) (Vz): 6.8 V
Impedance (Max) (Zzt): 15 Ohms
Supplier Device Package: DFN1006BD-2
Part Status: Active
Power - Max: 365 mW
Voltage - Forward (Vf) (Max) @ If: 900 mV @ 10 mA
Current - Reverse Leakage @ Vr: 100 nA @ 5.1 V
Produkt ist nicht verfügbar
BUK724R5-30C,118 BUK724R5-30C.pdf
BUK724R5-30C,118
Hersteller: Nexperia USA Inc.
Description: MOSFET N-CH 30V 75A DPAK
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 75A (Tc)
Rds On (Max) @ Id, Vgs: 4.5mOhm @ 25A, 10V
Power Dissipation (Max): 157W (Tc)
Vgs(th) (Max) @ Id: 4V @ 1mA
Supplier Device Package: DPAK
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 62 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3760 pF @ 25 V
Produkt ist nicht verfügbar
BUK724R5-30C,118 BUK724R5-30C.pdf
BUK724R5-30C,118
Hersteller: Nexperia USA Inc.
Description: MOSFET N-CH 30V 75A DPAK
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 75A (Tc)
Rds On (Max) @ Id, Vgs: 4.5mOhm @ 25A, 10V
Power Dissipation (Max): 157W (Tc)
Vgs(th) (Max) @ Id: 4V @ 1mA
Supplier Device Package: DPAK
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 62 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3760 pF @ 25 V
Produkt ist nicht verfügbar
PSMN3R0-60ES,127 PSMN3R0-60ES.pdf
PSMN3R0-60ES,127
Hersteller: Nexperia USA Inc.
Description: MOSFET N-CH 60V 100A I2PAK
Packaging: Bulk
Package / Case: TO-262-3 Long Leads, I²Pak, TO-262AA
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 100A (Tc)
Rds On (Max) @ Id, Vgs: 3mOhm @ 25A, 10V
Power Dissipation (Max): 306W (Tc)
Vgs(th) (Max) @ Id: 4V @ 1mA
Supplier Device Package: I2PAK
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 130 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 8079 pF @ 30 V
auf Bestellung 2665 Stücke:
Lieferzeit 21-28 Tag (e)
Anzahl Preis ohne MwSt
359+2.18 EUR
Mindestbestellmenge: 359
BZX84W-C22X BZX84W_SER.pdf
BZX84W-C22X
Hersteller: Nexperia USA Inc.
Description: DIODE ZENER 22V 275MW SOT323
Tolerance: ±5%
Packaging: Tape & Reel (TR)
Package / Case: SC-70, SOT-323
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Voltage - Zener (Nom) (Vz): 22 V
Impedance (Max) (Zzt): 55 Ohms
Supplier Device Package: SOT-323
Part Status: Active
Power - Max: 275 mW
Voltage - Forward (Vf) (Max) @ If: 900 mV @ 10 mA
Current - Reverse Leakage @ Vr: 50 nA @ 15.4 V
Produkt ist nicht verfügbar
BZX84W-C22X BZX84W_SER.pdf
BZX84W-C22X
Hersteller: Nexperia USA Inc.
Description: DIODE ZENER 22V 275MW SOT323
Tolerance: ±5%
Packaging: Cut Tape (CT)
Package / Case: SC-70, SOT-323
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Voltage - Zener (Nom) (Vz): 22 V
Impedance (Max) (Zzt): 55 Ohms
Supplier Device Package: SOT-323
Part Status: Active
Power - Max: 275 mW
Voltage - Forward (Vf) (Max) @ If: 900 mV @ 10 mA
Current - Reverse Leakage @ Vr: 50 nA @ 15.4 V
auf Bestellung 1039 Stücke:
Lieferzeit 21-28 Tag (e)
Anzahl Preis ohne MwSt
63+0.42 EUR
93+ 0.28 EUR
171+ 0.15 EUR
500+ 0.12 EUR
1000+ 0.083 EUR
Mindestbestellmenge: 63
PMEG100T20ELXD-QX PMEG100T20ELXD-Q.pdf
PMEG100T20ELXD-QX
Hersteller: Nexperia USA Inc.
Description: DIODE SCHOTTKY 100V 2A SOD323HP
Packaging: Tape & Reel (TR)
Package / Case: 2-SMD, Flat Lead
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 6 ns
Technology: Schottky
Capacitance @ Vr, F: 120pF @ 1V, 1MHz
Current - Average Rectified (Io): 2A
Supplier Device Package: SOD323HP
Operating Temperature - Junction: 175°C
Grade: Automotive
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 880 mV @ 2 A
Current - Reverse Leakage @ Vr: 600 nA @ 100 V
Qualification: AEC-Q101
Produkt ist nicht verfügbar
PMEG150G20ELR-QX
PMEG150G20ELR-QX
Hersteller: Nexperia USA Inc.
Description: DIODE GEN PURP 150V 2A SOD123W
Packaging: Tape & Reel (TR)
Package / Case: SOD-123W
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 14 ns
Technology: SiGe (Silicon Germanium)
Capacitance @ Vr, F: 70pF @ 1V, 1MHz
Current - Average Rectified (Io): 2A
Supplier Device Package: SOD-123W
Operating Temperature - Junction: 175°C
Grade: Automotive
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 150 V
Voltage - Forward (Vf) (Max) @ If: 850 mV @ 2 A
Current - Reverse Leakage @ Vr: 30 nA @ 150 V
Qualification: AEC-Q101
Produkt ist nicht verfügbar
PMEG150G20ELR-QX
PMEG150G20ELR-QX
Hersteller: Nexperia USA Inc.
Description: DIODE GEN PURP 150V 2A SOD123W
Packaging: Cut Tape (CT)
Package / Case: SOD-123W
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 14 ns
Technology: SiGe (Silicon Germanium)
Capacitance @ Vr, F: 70pF @ 1V, 1MHz
Current - Average Rectified (Io): 2A
Supplier Device Package: SOD-123W
Operating Temperature - Junction: 175°C
Grade: Automotive
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 150 V
Voltage - Forward (Vf) (Max) @ If: 850 mV @ 2 A
Current - Reverse Leakage @ Vr: 30 nA @ 150 V
Qualification: AEC-Q101
auf Bestellung 2460 Stücke:
Lieferzeit 21-28 Tag (e)
Anzahl Preis ohne MwSt
24+1.09 EUR
31+ 0.85 EUR
100+ 0.51 EUR
500+ 0.47 EUR
1000+ 0.32 EUR
Mindestbestellmenge: 24
PMEG60T10ELXD-QX PMEG60T10ELXD-Q.pdf
PMEG60T10ELXD-QX
Hersteller: Nexperia USA Inc.
Description: DIODE SCHOTTKY 60V 1A SOD323HP
Packaging: Tape & Reel (TR)
Package / Case: 2-SMD, Flat Lead
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 7 ns
Technology: Schottky
Capacitance @ Vr, F: 155pF @ 1V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: SOD323HP
Operating Temperature - Junction: 175°C
Grade: Automotive
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 60 V
Voltage - Forward (Vf) (Max) @ If: 640 mV @ 1 A
Current - Reverse Leakage @ Vr: 400 nA @ 60 V
Qualification: AEC-Q101
Produkt ist nicht verfügbar
PMEG60T20ELXD-QX PMEG60T20ELXD-Q.pdf
PMEG60T20ELXD-QX
Hersteller: Nexperia USA Inc.
Description: DIODE SCHOTTKY 60V 2A SOD323HP
Packaging: Tape & Reel (TR)
Package / Case: 2-SMD, Flat Lead
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 8 ns
Technology: Schottky
Capacitance @ Vr, F: 210pF @ 1V, 1MHz
Current - Average Rectified (Io): 2A
Supplier Device Package: SOD323HP
Operating Temperature - Junction: 175°C
Grade: Automotive
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 60 V
Voltage - Forward (Vf) (Max) @ If: 700 mV @ 2 A
Current - Reverse Leakage @ Vr: 470 nA @ 60 V
Qualification: AEC-Q101
auf Bestellung 4500 Stücke:
Lieferzeit 21-28 Tag (e)
Anzahl Preis ohne MwSt
4500+0.2 EUR
Mindestbestellmenge: 4500
PMEG120G20ELR-QX
PMEG120G20ELR-QX
Hersteller: Nexperia USA Inc.
Description: DIODE GEN PURP 120V 2A SOD123W
Packaging: Tape & Reel (TR)
Package / Case: SOD-123W
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 11 ns
Technology: SiGe (Silicon Germanium)
Capacitance @ Vr, F: 75pF @ 1V, 1MHz
Current - Average Rectified (Io): 2A
Supplier Device Package: SOD-123W
Operating Temperature - Junction: 175°C
Grade: Automotive
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 120 V
Voltage - Forward (Vf) (Max) @ If: 840 mV @ 2 A
Current - Reverse Leakage @ Vr: 30 nA @ 120 V
Qualification: AEC-Q101
Produkt ist nicht verfügbar
PMEG120G20ELR-QX
PMEG120G20ELR-QX
Hersteller: Nexperia USA Inc.
Description: DIODE GEN PURP 120V 2A SOD123W
Packaging: Cut Tape (CT)
Package / Case: SOD-123W
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 11 ns
Technology: SiGe (Silicon Germanium)
Capacitance @ Vr, F: 75pF @ 1V, 1MHz
Current - Average Rectified (Io): 2A
Supplier Device Package: SOD-123W
Operating Temperature - Junction: 175°C
Grade: Automotive
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 120 V
Voltage - Forward (Vf) (Max) @ If: 840 mV @ 2 A
Current - Reverse Leakage @ Vr: 30 nA @ 120 V
Qualification: AEC-Q101
auf Bestellung 2060 Stücke:
Lieferzeit 21-28 Tag (e)
Anzahl Preis ohne MwSt
25+1.07 EUR
32+ 0.84 EUR
100+ 0.5 EUR
500+ 0.47 EUR
1000+ 0.32 EUR
Mindestbestellmenge: 25
PMEG120G10ELR-QX
PMEG120G10ELR-QX
Hersteller: Nexperia USA Inc.
Description: DIODE GEN PURP 120V 1A SOD123W
Packaging: Tape & Reel (TR)
Package / Case: SOD-123W
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 12 ns
Technology: SiGe (Silicon Germanium)
Capacitance @ Vr, F: 36pF @ 1V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: SOD-123W
Operating Temperature - Junction: 175°C
Grade: Automotive
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 120 V
Voltage - Forward (Vf) (Max) @ If: 840 mV @ 1 A
Current - Reverse Leakage @ Vr: 30 nA @ 120 V
Qualification: AEC-Q101
auf Bestellung 9000 Stücke:
Lieferzeit 21-28 Tag (e)
Anzahl Preis ohne MwSt
3000+0.23 EUR
6000+ 0.22 EUR
9000+ 0.2 EUR
Mindestbestellmenge: 3000
PMEG120G10ELR-QX
PMEG120G10ELR-QX
Hersteller: Nexperia USA Inc.
Description: DIODE GEN PURP 120V 1A SOD123W
Packaging: Cut Tape (CT)
Package / Case: SOD-123W
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 12 ns
Technology: SiGe (Silicon Germanium)
Capacitance @ Vr, F: 36pF @ 1V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: SOD-123W
Operating Temperature - Junction: 175°C
Grade: Automotive
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 120 V
Voltage - Forward (Vf) (Max) @ If: 840 mV @ 1 A
Current - Reverse Leakage @ Vr: 30 nA @ 120 V
Qualification: AEC-Q101
auf Bestellung 10573 Stücke:
Lieferzeit 21-28 Tag (e)
Anzahl Preis ohne MwSt
32+0.83 EUR
40+ 0.65 EUR
100+ 0.39 EUR
500+ 0.36 EUR
1000+ 0.25 EUR
Mindestbestellmenge: 32
PMEG100T30ELPX PMEG100T30ELP.pdf
PMEG100T30ELPX
Hersteller: Nexperia USA Inc.
Description: DIODE SCHOTT 100V 3A SOD128/CFP5
Packaging: Tape & Reel (TR)
Package / Case: SOD-128
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 12.5 ns
Technology: Schottky
Capacitance @ Vr, F: 300pF @ 1V, 1MHz
Current - Average Rectified (Io): 3A
Supplier Device Package: SOD-128/CFP5
Operating Temperature - Junction: 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 800 mV @ 3 A
Current - Reverse Leakage @ Vr: 1.75 µA @ 100 V
auf Bestellung 6000 Stücke:
Lieferzeit 21-28 Tag (e)
Anzahl Preis ohne MwSt
3000+0.51 EUR
6000+ 0.48 EUR
Mindestbestellmenge: 3000
PMEG150G20ELP-QX
PMEG150G20ELP-QX
Hersteller: Nexperia USA Inc.
Description: DIODE SIGE 150V 2A SOD128/CFP5
Packaging: Tape & Reel (TR)
Package / Case: SOD-128
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 14 ns
Technology: SiGe (Silicon Germanium)
Capacitance @ Vr, F: 70pF @ 1V, 1MHz
Current - Average Rectified (Io): 2A
Supplier Device Package: SOD-128/CFP5
Operating Temperature - Junction: 175°C
Grade: Automotive
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 150 V
Voltage - Forward (Vf) (Max) @ If: 850 mV @ 2 A
Current - Reverse Leakage @ Vr: 30 nA @ 150 V
Qualification: AEC-Q101
Produkt ist nicht verfügbar
PMEG150G20ELP-QX
PMEG150G20ELP-QX
Hersteller: Nexperia USA Inc.
Description: DIODE SIGE 150V 2A SOD128/CFP5
Packaging: Cut Tape (CT)
Package / Case: SOD-128
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 14 ns
Technology: SiGe (Silicon Germanium)
Capacitance @ Vr, F: 70pF @ 1V, 1MHz
Current - Average Rectified (Io): 2A
Supplier Device Package: SOD-128/CFP5
Operating Temperature - Junction: 175°C
Grade: Automotive
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 150 V
Voltage - Forward (Vf) (Max) @ If: 850 mV @ 2 A
Current - Reverse Leakage @ Vr: 30 nA @ 150 V
Qualification: AEC-Q101
auf Bestellung 2907 Stücke:
Lieferzeit 21-28 Tag (e)
Anzahl Preis ohne MwSt
28+0.96 EUR
31+ 0.84 EUR
100+ 0.58 EUR
500+ 0.46 EUR
1000+ 0.37 EUR
Mindestbestellmenge: 28
PMEG120G30ELP-QX
PMEG120G30ELP-QX
Hersteller: Nexperia USA Inc.
Description: DIODE GP 120V 3A SOD128/CFP5
Packaging: Tape & Reel (TR)
Package / Case: SOD-128
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 11 ns
Technology: SiGe (Silicon Germanium)
Capacitance @ Vr, F: 103pF @ 1V, 1MHz
Current - Average Rectified (Io): 3A
Supplier Device Package: SOD-128/CFP5
Operating Temperature - Junction: 175°C
Grade: Automotive
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 120 V
Voltage - Forward (Vf) (Max) @ If: 840 mV @ 3 A
Current - Reverse Leakage @ Vr: 30 nA @ 120 V
Qualification: AEC-Q101
Produkt ist nicht verfügbar
PMEG120G30ELP-QX
PMEG120G30ELP-QX
Hersteller: Nexperia USA Inc.
Description: DIODE GP 120V 3A SOD128/CFP5
Packaging: Cut Tape (CT)
Package / Case: SOD-128
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 11 ns
Technology: SiGe (Silicon Germanium)
Capacitance @ Vr, F: 103pF @ 1V, 1MHz
Current - Average Rectified (Io): 3A
Supplier Device Package: SOD-128/CFP5
Operating Temperature - Junction: 175°C
Grade: Automotive
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 120 V
Voltage - Forward (Vf) (Max) @ If: 840 mV @ 3 A
Current - Reverse Leakage @ Vr: 30 nA @ 120 V
Qualification: AEC-Q101
auf Bestellung 2127 Stücke:
Lieferzeit 21-28 Tag (e)
Anzahl Preis ohne MwSt
23+1.14 EUR
27+ 0.97 EUR
100+ 0.67 EUR
500+ 0.53 EUR
1000+ 0.43 EUR
Mindestbestellmenge: 23
PMEG100T10ELXDX PMEG100T10ELXD.pdf
PMEG100T10ELXDX
Hersteller: Nexperia USA Inc.
Description: DIODE SCHOTTKY 100V 1A SOD323HP
Packaging: Tape & Reel (TR)
Package / Case: 2-SMD, Flat Lead
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 6 ns
Technology: Schottky
Capacitance @ Vr, F: 95pF @ 1V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: SOD323HP
Operating Temperature - Junction: 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 795 mV @ 1 A
Current - Reverse Leakage @ Vr: 500 nA @ 100 V
auf Bestellung 31500 Stücke:
Lieferzeit 21-28 Tag (e)
Anzahl Preis ohne MwSt
4500+0.21 EUR
9000+ 0.18 EUR
Mindestbestellmenge: 4500
PMEG100T10ELXDX PMEG100T10ELXD.pdf
PMEG100T10ELXDX
Hersteller: Nexperia USA Inc.
Description: DIODE SCHOTTKY 100V 1A SOD323HP
Packaging: Cut Tape (CT)
Package / Case: 2-SMD, Flat Lead
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 6 ns
Technology: Schottky
Capacitance @ Vr, F: 95pF @ 1V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: SOD323HP
Operating Temperature - Junction: 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 795 mV @ 1 A
Current - Reverse Leakage @ Vr: 500 nA @ 100 V
auf Bestellung 36708 Stücke:
Lieferzeit 21-28 Tag (e)
Anzahl Preis ohne MwSt
28+0.94 EUR
39+ 0.67 EUR
100+ 0.34 EUR
500+ 0.3 EUR
1000+ 0.23 EUR
2000+ 0.21 EUR
Mindestbestellmenge: 28
PMEG150G10ELR-QX
PMEG150G10ELR-QX
Hersteller: Nexperia USA Inc.
Description: DIODE GEN PURP 150V 1A SOD123W
Packaging: Tape & Reel (TR)
Package / Case: SOD-123W
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 15 ns
Technology: SiGe (Silicon Germanium)
Capacitance @ Vr, F: 34pF @ 1V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: SOD-123W
Operating Temperature - Junction: 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 150 V
Voltage - Forward (Vf) (Max) @ If: 850 mV @ 1 A
Current - Reverse Leakage @ Vr: 30 nA @ 150 V
Grade: Automotive
Qualification: AEC-Q101
Produkt ist nicht verfügbar
PMEG150G10ELR-QX
PMEG150G10ELR-QX
Hersteller: Nexperia USA Inc.
Description: DIODE GEN PURP 150V 1A SOD123W
Packaging: Cut Tape (CT)
Package / Case: SOD-123W
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 15 ns
Technology: SiGe (Silicon Germanium)
Capacitance @ Vr, F: 34pF @ 1V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: SOD-123W
Operating Temperature - Junction: 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 150 V
Voltage - Forward (Vf) (Max) @ If: 850 mV @ 1 A
Current - Reverse Leakage @ Vr: 30 nA @ 150 V
Grade: Automotive
Qualification: AEC-Q101
auf Bestellung 2790 Stücke:
Lieferzeit 21-28 Tag (e)
Anzahl Preis ohne MwSt
30+0.88 EUR
39+ 0.68 EUR
100+ 0.41 EUR
500+ 0.38 EUR
1000+ 0.26 EUR
Mindestbestellmenge: 30
PMEG120G20ELP-QX
PMEG120G20ELP-QX
Hersteller: Nexperia USA Inc.
Description: DIODE GP 120V 2A SOD128/CFP5
Packaging: Tape & Reel (TR)
Package / Case: SOD-128
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 11 ns
Technology: SiGe (Silicon Germanium)
Capacitance @ Vr, F: 75pF @ 1V, 1MHz
Current - Average Rectified (Io): 2A
Supplier Device Package: SOD-128/CFP5
Operating Temperature - Junction: 175°C
Grade: Automotive
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 120 V
Voltage - Forward (Vf) (Max) @ If: 840 mV @ 2 A
Current - Reverse Leakage @ Vr: 30 nA @ 120 V
Qualification: AEC-Q101
Produkt ist nicht verfügbar
PMEG120G20ELP-QX
PMEG120G20ELP-QX
Hersteller: Nexperia USA Inc.
Description: DIODE GP 120V 2A SOD128/CFP5
Packaging: Cut Tape (CT)
Package / Case: SOD-128
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 11 ns
Technology: SiGe (Silicon Germanium)
Capacitance @ Vr, F: 75pF @ 1V, 1MHz
Current - Average Rectified (Io): 2A
Supplier Device Package: SOD-128/CFP5
Operating Temperature - Junction: 175°C
Grade: Automotive
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 120 V
Voltage - Forward (Vf) (Max) @ If: 840 mV @ 2 A
Current - Reverse Leakage @ Vr: 30 nA @ 120 V
Qualification: AEC-Q101
auf Bestellung 53 Stücke:
Lieferzeit 21-28 Tag (e)
Anzahl Preis ohne MwSt
28+0.96 EUR
32+ 0.82 EUR
Mindestbestellmenge: 28
PRMB11Z PRMB11.pdf
PRMB11Z
Hersteller: Nexperia USA Inc.
Description: TRANS PREBIAS 2PNP 50V DFN1412-6
Packaging: Bulk
Package / Case: 6-XFDFN Exposed Pad
Mounting Type: Surface Mount
Transistor Type: 2 PNP - Pre-Biased (Dual)
Power - Max: 480mW
Current - Collector (Ic) (Max): 100mA
Voltage - Collector Emitter Breakdown (Max): 50V
Vce Saturation (Max) @ Ib, Ic: 150mV @ 500µA, 10mA
Current - Collector Cutoff (Max): 100nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 30 @ 5mA, 5V
Frequency - Transition: 180MHz
Resistor - Base (R1): 10kOhms
Resistor - Emitter Base (R2): 10kOhms
Supplier Device Package: DFN1412-6
Part Status: Active
Grade: Automotive
Qualification: AEC-Q101
auf Bestellung 144150 Stücke:
Lieferzeit 21-28 Tag (e)
Anzahl Preis ohne MwSt
9072+0.072 EUR
Mindestbestellmenge: 9072
BZX84-C3V6/DG/B4R PHGLS29437-1.pdf?t.download=true&u=5oefqw
BZX84-C3V6/DG/B4R
Hersteller: Nexperia USA Inc.
Description: DIODE ZENER 3.6V 250MW TO236AB
Produkt ist nicht verfügbar
BZX84-C3V6/DG/B3:2 PHGLS29437-1.pdf?t.download=true&u=5oefqw
BZX84-C3V6/DG/B3:2
Hersteller: Nexperia USA Inc.
Description: DIODE ZENER 3.6V 250MW TO236AB
Produkt ist nicht verfügbar
BZX84-C3V6/DG/B3,2 PHGLS29437-1.pdf?t.download=true&u=5oefqw
BZX84-C3V6/DG/B3,2
Hersteller: Nexperia USA Inc.
Description: DIODE ZENER 3.6V 250MW TO236AB
Produkt ist nicht verfügbar
BZX84-C3V6/DG/B4VL PHGLS29437-1.pdf?t.download=true&u=5oefqw
BZX84-C3V6/DG/B4VL
Hersteller: Nexperia USA Inc.
Description: DIODE ZENER 3.6V 250MW TO236AB
Produkt ist nicht verfügbar
74HC4852BQ-Q100115 74HC_HCT4852_Q100.pdf
74HC4852BQ-Q100115
Hersteller: Nexperia USA Inc.
Description: NEXPERIA 74HC4852BQ-Q100 - SINGL
Produkt ist nicht verfügbar
PMEG6020ETR-QX
PMEG6020ETR-QX
Hersteller: Nexperia USA Inc.
Description: DIODE SCHOTTKY 60V 2A SOD123W
Packaging: Tape & Reel (TR)
Package / Case: SOD-123W
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 8.5 ns
Technology: Schottky
Capacitance @ Vr, F: 240pF @ 1V, 1MHz
Current - Average Rectified (Io): 2A
Supplier Device Package: SOD-123W
Operating Temperature - Junction: 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 60 V
Voltage - Forward (Vf) (Max) @ If: 530 mV @ 2 A
Current - Reverse Leakage @ Vr: 150 µA @ 60 V
Grade: Automotive
Qualification: AEC-Q101
auf Bestellung 3000 Stücke:
Lieferzeit 21-28 Tag (e)
Anzahl Preis ohne MwSt
3000+0.24 EUR
Mindestbestellmenge: 3000
PMEG6020AELP-QX PMEG6020AELP-Q.pdf
PMEG6020AELP-QX
Hersteller: Nexperia USA Inc.
Description: DIODE SCHOTTKY 60V 2A SOD128
Packaging: Tape & Reel (TR)
Package / Case: SOD-128
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 9 ns
Technology: Schottky
Capacitance @ Vr, F: 220pF @ 1V, 1MHz
Current - Average Rectified (Io): 2A
Supplier Device Package: SOD-128/CFP5
Operating Temperature - Junction: 175°C
Voltage - DC Reverse (Vr) (Max): 60 V
Voltage - Forward (Vf) (Max) @ If: 670 mV @ 2 A
Current - Reverse Leakage @ Vr: 700 nA @ 60 V
Grade: Automotive
Qualification: AEC-Q101
Produkt ist nicht verfügbar
PMEG6020ETP-QX PMEG6020ETP-Q.pdf
PMEG6020ETP-QX
Hersteller: Nexperia USA Inc.
Description: DIODE SCHOTTKY 60V 2A SOD128
Packaging: Tape & Reel (TR)
Package / Case: SOD-128
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 8.6 ns
Technology: Schottky
Capacitance @ Vr, F: 240pF @ 1V, 1MHz
Current - Average Rectified (Io): 2A
Supplier Device Package: SOD-128/CFP5
Operating Temperature - Junction: 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 60 V
Voltage - Forward (Vf) (Max) @ If: 530 mV @ 2 A
Current - Reverse Leakage @ Vr: 150 µA @ 60 V
Grade: Automotive
Qualification: AEC-Q101
auf Bestellung 6000 Stücke:
Lieferzeit 21-28 Tag (e)
Anzahl Preis ohne MwSt
3000+0.32 EUR
6000+ 0.3 EUR
Mindestbestellmenge: 3000
PMEG6020ELR-QX
PMEG6020ELR-QX
Hersteller: Nexperia USA Inc.
Description: DIODE SCHOTTKY 60V 2A SOD123W
Packaging: Tape & Reel (TR)
Package / Case: SOD-123W
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 4.5 ns
Technology: Schottky
Capacitance @ Vr, F: 110pF @ 1V, 1MHz
Current - Average Rectified (Io): 2A
Supplier Device Package: SOD-123W
Operating Temperature - Junction: 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 60 V
Voltage - Forward (Vf) (Max) @ If: 760 mV @ 2 A
Current - Reverse Leakage @ Vr: 300 nA @ 60 V
Grade: Automotive
Qualification: AEC-Q101
Produkt ist nicht verfügbar
PMEG6020AELR-QX PMEG6020AELR-Q.pdf
PMEG6020AELR-QX
Hersteller: Nexperia USA Inc.
Description: DIODE SCHOTTKY 60V 2A SOD123W
Packaging: Tape & Reel (TR)
Package / Case: SOD-123W
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 9 ns
Technology: Schottky
Capacitance @ Vr, F: 220pF @ 1V, 1MHz
Current - Average Rectified (Io): 2A
Supplier Device Package: SOD-123W
Operating Temperature - Junction: 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 60 V
Voltage - Forward (Vf) (Max) @ If: 670 mV @ 2 A
Current - Reverse Leakage @ Vr: 700 nA @ 60 V
Grade: Automotive
Qualification: AEC-Q101
auf Bestellung 3000 Stücke:
Lieferzeit 21-28 Tag (e)
Anzahl Preis ohne MwSt
3000+0.28 EUR
Mindestbestellmenge: 3000
PMEG6020ER-QX
PMEG6020ER-QX
Hersteller: Nexperia USA Inc.
Description: DIODE SCHOTTKY 60V 2A SOD123W
Packaging: Tape & Reel (TR)
Package / Case: SOD-123W
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Capacitance @ Vr, F: 240pF @ 1V, 1MHz
Current - Average Rectified (Io): 2A
Supplier Device Package: SOD-123W
Operating Temperature - Junction: 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 60 V
Voltage - Forward (Vf) (Max) @ If: 530 mV @ 2 A
Current - Reverse Leakage @ Vr: 150 µA @ 60 V
Grade: Automotive
Qualification: AEC-Q101
auf Bestellung 12000 Stücke:
Lieferzeit 21-28 Tag (e)
Anzahl Preis ohne MwSt
3000+0.23 EUR
6000+ 0.22 EUR
9000+ 0.2 EUR
Mindestbestellmenge: 3000
PMEG6020EP-QX PMEG6020EP-Q.pdf
PMEG6020EP-QX
Hersteller: Nexperia USA Inc.
Description: DIODE SCHOTTKY 60V 2A SOD128
Packaging: Tape & Reel (TR)
Package / Case: SOD-128
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Capacitance @ Vr, F: 240pF @ 1V, 1MHz
Current - Average Rectified (Io): 2A
Supplier Device Package: SOD-128/CFP5
Operating Temperature - Junction: 150°C
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 60 V
Voltage - Forward (Vf) (Max) @ If: 530 mV @ 2 A
Current - Reverse Leakage @ Vr: 150 µA @ 60 V
Qualification: AEC-Q101
Produkt ist nicht verfügbar
PDTC124EQAZ PDTC143_114_124_144EQA_SER.pdf
PDTC124EQAZ
Hersteller: Nexperia USA Inc.
Description: TRANS PREBIAS NPN 50V 0.1A 3DFN
Packaging: Bulk
Package / Case: 3-XDFN Exposed Pad
Mounting Type: Surface Mount
Transistor Type: NPN - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 150mV @ 500µA, 10mA
Current - Collector Cutoff (Max): 1µA
DC Current Gain (hFE) (Min) @ Ic, Vce: 60 @ 5mA, 5V
Supplier Device Package: DFN1010D-3
Part Status: Active
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 280 mW
Frequency - Transition: 230 MHz
Resistor - Base (R1): 22 kOhms
Resistor - Emitter Base (R2): 22 kOhms
auf Bestellung 45000 Stücke:
Lieferzeit 21-28 Tag (e)
Anzahl Preis ohne MwSt
9489+0.074 EUR
Mindestbestellmenge: 9489
74LVC2G126GS,115 74LVC2G126.pdf
74LVC2G126GS,115
Hersteller: Nexperia USA Inc.
Description: NEXPERIA 74LVC2G126 - DUAL BUS B
auf Bestellung 92218 Stücke:
Lieferzeit 21-28 Tag (e)
Anzahl Preis ohne MwSt
3256+0.24 EUR
Mindestbestellmenge: 3256
PZU9.1B1,115 PHGLS19743-1.pdf?t.download=true&u=5oefqw
PZU9.1B1,115
Hersteller: Nexperia USA Inc.
Description: DIODE ZENER 9.1V 310MW SOD323F
Produkt ist nicht verfügbar
PZU9.1B1,115 PHGLS19743-1.pdf?t.download=true&u=5oefqw
PZU9.1B1,115
Hersteller: Nexperia USA Inc.
Description: DIODE ZENER 9.1V 310MW SOD323F
Produkt ist nicht verfügbar
PZU9.1B1,115 PHGLS19743-1.pdf?t.download=true&u=5oefqw
PZU9.1B1,115
Hersteller: Nexperia USA Inc.
Description: DIODE ZENER 9.1V 310MW SOD323F
auf Bestellung 141000 Stücke:
Lieferzeit 21-28 Tag (e)
Anzahl Preis ohne MwSt
9584+0.076 EUR
Mindestbestellmenge: 9584
74CBTLV3126BQ115 74CBTLV3126.pdf
74CBTLV3126BQ115
Hersteller: Nexperia USA Inc.
Description: NOW NEXPERIA 74CBTLV3126BQ - BUS
Produkt ist nicht verfügbar
74CBTLV3126PW-Q100118 74CBTLV3126_Q100.pdf
74CBTLV3126PW-Q100118
Hersteller: Nexperia USA Inc.
Description: BUS DRIVER, CBT SERIES
Produkt ist nicht verfügbar
74HC2GU04GW PHGLS14425-1.pdf?t.download=true&u=5oefqw
74HC2GU04GW
Hersteller: Nexperia USA Inc.
Description: IC INVERTER 2CH 2-INP 6TSSOP
Produkt ist nicht verfügbar
74HC2G00GD,125 74HC_HCT2G00.pdf
74HC2G00GD,125
Hersteller: Nexperia USA Inc.
Description: IC GATE NAND 2CH 2-INP 8XSON
Packaging: Tape & Reel (TR)
Package / Case: 8-XFDFN
Mounting Type: Surface Mount
Logic Type: NAND Gate
Operating Temperature: -40°C ~ 125°C
Voltage - Supply: 2V ~ 6V
Current - Output High, Low: 5.2mA, 5.2mA
Number of Inputs: 2
Supplier Device Package: 8-XSON (2x3)
Input Logic Level - High: 1.5V ~ 4.2V
Input Logic Level - Low: 0.5V ~ 1.8V
Max Propagation Delay @ V, Max CL: 7ns @ 6V, 50pF
Part Status: Obsolete
Number of Circuits: 2
Current - Quiescent (Max): 20 µA
Produkt ist nicht verfügbar
74HC2G00GD,125 74HC_HCT2G00.pdf
74HC2G00GD,125
Hersteller: Nexperia USA Inc.
Description: IC GATE NAND 2CH 2-INP 8XSON
Packaging: Cut Tape (CT)
Package / Case: 8-XFDFN
Mounting Type: Surface Mount
Logic Type: NAND Gate
Operating Temperature: -40°C ~ 125°C
Voltage - Supply: 2V ~ 6V
Current - Output High, Low: 5.2mA, 5.2mA
Number of Inputs: 2
Supplier Device Package: 8-XSON (2x3)
Input Logic Level - High: 1.5V ~ 4.2V
Input Logic Level - Low: 0.5V ~ 1.8V
Max Propagation Delay @ V, Max CL: 7ns @ 6V, 50pF
Part Status: Obsolete
Number of Circuits: 2
Current - Quiescent (Max): 20 µA
Produkt ist nicht verfügbar
PMPB16R5XNEX PMPB16R5XNE.pdf
PMPB16R5XNEX
Hersteller: Nexperia USA Inc.
Description: PMPB16R5XNE - 30 V, N-CHANNEL TR
Packaging: Tape & Reel (TR)
Package / Case: 6-UDFN Exposed Pad
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 7A (Ta)
Rds On (Max) @ Id, Vgs: 19mOhm @ 4.5A, 4.5V
Power Dissipation (Max): 1.7W (Ta), 12.5W (Tc)
Vgs(th) (Max) @ Id: 900mV @ 250µA
Supplier Device Package: DFN2020M-6
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4.5V
Vgs (Max): ±12V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 18 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 1150 pF @ 15 V
auf Bestellung 6000 Stücke:
Lieferzeit 21-28 Tag (e)
Anzahl Preis ohne MwSt
3000+0.31 EUR
6000+ 0.3 EUR
Mindestbestellmenge: 3000
PMPB16R5XNEX PMPB16R5XNE.pdf
PMPB16R5XNEX
Hersteller: Nexperia USA Inc.
Description: PMPB16R5XNE - 30 V, N-CHANNEL TR
Packaging: Cut Tape (CT)
Package / Case: 6-UDFN Exposed Pad
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 7A (Ta)
Rds On (Max) @ Id, Vgs: 19mOhm @ 4.5A, 4.5V
Power Dissipation (Max): 1.7W (Ta), 12.5W (Tc)
Vgs(th) (Max) @ Id: 900mV @ 250µA
Supplier Device Package: DFN2020M-6
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4.5V
Vgs (Max): ±12V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 18 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 1150 pF @ 15 V
auf Bestellung 8450 Stücke:
Lieferzeit 21-28 Tag (e)
Anzahl Preis ohne MwSt
23+1.14 EUR
30+ 0.89 EUR
100+ 0.54 EUR
500+ 0.5 EUR
1000+ 0.34 EUR
Mindestbestellmenge: 23
PMPB12R7EPX PMPB12R7EP.pdf
PMPB12R7EPX
Hersteller: Nexperia USA Inc.
Description: PMPB12R7EP - 30 V, P-CHANNEL TRE
Packaging: Tape & Reel (TR)
Package / Case: 6-UDFN Exposed Pad
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 8.7A (Ta)
Rds On (Max) @ Id, Vgs: 15.5mOhm @ 8.7A, 10V
Power Dissipation (Max): 1.9W (Ta), 12.5W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: DFN2020M-6
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 49 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1638 pF @ 15 V
Produkt ist nicht verfügbar
PMPB12R7EPX PMPB12R7EP.pdf
PMPB12R7EPX
Hersteller: Nexperia USA Inc.
Description: PMPB12R7EP - 30 V, P-CHANNEL TRE
Packaging: Cut Tape (CT)
Package / Case: 6-UDFN Exposed Pad
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 8.7A (Ta)
Rds On (Max) @ Id, Vgs: 15.5mOhm @ 8.7A, 10V
Power Dissipation (Max): 1.9W (Ta), 12.5W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: DFN2020M-6
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 49 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1638 pF @ 15 V
auf Bestellung 4615 Stücke:
Lieferzeit 21-28 Tag (e)
Anzahl Preis ohne MwSt
24+1.09 EUR
28+ 0.93 EUR
100+ 0.65 EUR
500+ 0.51 EUR
1000+ 0.41 EUR
Mindestbestellmenge: 24
BZX884S-C4V7-QYL BZX884S-Q_SER.pdf
BZX884S-C4V7-QYL
Hersteller: Nexperia USA Inc.
Description: SMALL SIGNAL BIPOLAR IN DFN PACK
Produkt ist nicht verfügbar
74LV4051PW PHGL-S-A0001696303-1.pdf?t.download=true&u=5oefqw
74LV4051PW
Hersteller: Nexperia USA Inc.
Description: SINGLE-ENDED MULTIPLEXER, 1 FUNC
Produkt ist nicht verfügbar
BUK9MHH-65PNN,518
Hersteller: Nexperia USA Inc.
Description: MOSFET 2N-CH 65V 15A 20SO
Packaging: Tape & Reel (TR)
Package / Case: 20-SOIC (0.295", 7.50mm Width)
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 5W (Tc)
Drain to Source Voltage (Vdss): 65V
Current - Continuous Drain (Id) @ 25°C: 15A (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 3643pF @ 25V
Rds On (Max) @ Id, Vgs: 10.6mOhm @ 10A, 10V
Gate Charge (Qg) (Max) @ Vgs: 44.6nC @ 5V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 2V @ 1mA
Supplier Device Package: 20-SO
Part Status: Obsolete
Produkt ist nicht verfügbar
BZX84J-C27,135 BZX84J_SER.pdf
BZX84J-C27,135
Hersteller: Nexperia USA Inc.
Description: DIODE ZENER 27V 550MW SOD323F
Tolerance: ±5%
Packaging: Tape & Reel (TR)
Package / Case: SC-90, SOD-323F
Mounting Type: Surface Mount
Operating Temperature: -65°C ~ 150°C
Voltage - Zener (Nom) (Vz): 27 V
Impedance (Max) (Zzt): 40 Ohms
Supplier Device Package: SOD-323F
Part Status: Active
Power - Max: 550 mW
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 100 mA
Current - Reverse Leakage @ Vr: 50 nA @ 18.9 V
Produkt ist nicht verfügbar
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