| Foto | Bezeichnung | Hersteller | Beschreibung | Verfügbarkeit | Privatkunde | ||||||||||||||
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
 |
74HC2G16GVH | NEXPERIA |
 Category: Buffers, transceivers, driversDescription: IC: digital; buffer,non-inverting; Ch: 2; CMOS; SMD; TSOP6; 2÷6VDC Mounting: SMD Supply voltage: 2...6V DC Manufacturer series: Mini Logic Type of integrated circuit: digital Kind of output: push-pull Operating temperature: -40...125°C Technology: CMOS Kind of package: reel; tape Case: TSOP6 Family: HC Kind of integrated circuit: buffer; non-inverting Number of channels: 2 |
auf Bestellung 6433 Stücke: Lieferzeit 14-21 Tag (e) |
|
||||||||||||||
 |
74HC4050D,653 | NEXPERIA |
Category: Buffers, transceivers, drivers Description: IC: digital; buffer,non-inverting; Ch: 6; CMOS; SMD; SO16; -40÷125°C Type of integrated circuit: digital Mounting: SMD Supply voltage: 2...6V DC Kind of output: push-pull Operating temperature: -40...125°C Technology: CMOS Quiescent current: 40µA Kind of package: reel; tape Case: SO16 Family: HC Kind of integrated circuit: buffer; non-inverting Number of channels: 6 |
auf Bestellung 190 Stücke: Lieferzeit 14-21 Tag (e) |
|
||||||||||||||
 |
74LVC1G14GW,125 | NEXPERIA |
Category: Gates, inverters Description: IC: digital; NOT; Ch: 1; CMOS,TTL; SMD; TSSOP5; Mini Logic; reel,tape Type of integrated circuit: digital Kind of gate: NOT Number of channels: single; 1 Technology: CMOS; TTL Mounting: SMD Case: TSSOP5 Manufacturer series: Mini Logic Kind of package: reel; tape Kind of input: with Schmitt trigger Family: LVC |
auf Bestellung 18008 Stücke: Lieferzeit 14-21 Tag (e) |
|
||||||||||||||
 |
74LVC244APW,118 | NEXPERIA |
Category: Buffers, transceivers, drivers Description: IC: digital; 8bit,buffer,line driver; CMOS; SMD; TSSOP20; LVC Operating temperature: -40...125°C Kind of package: reel; tape Case: TSSOP20 Family: LVC Kind of integrated circuit: 8bit; buffer; line driver Mounting: SMD Supply voltage: 1.2...3.6V DC Type of integrated circuit: digital Kind of output: 3-state Technology: CMOS |
auf Bestellung 14 Stücke: Lieferzeit 14-21 Tag (e) |
|
||||||||||||||
 |
PTVS5V0S1UR,115 | NEXPERIA |
Category: Unidirectional TVS SMD diodes Description: Diode: TVS; 400W; 6.7V; 43.5A; unidirectional; SOD123W; max.150°C Type of diode: TVS Peak pulse power dissipation: 0.4kW Max. off-state voltage: 5V Breakdown voltage: 6.7V Max. forward impulse current: 43.5A Semiconductor structure: unidirectional Case: SOD123W Mounting: SMD Leakage current: 5µA Operating temperature: max. 150°C |
auf Bestellung 2317 Stücke: Lieferzeit 14-21 Tag (e) |
|
||||||||||||||
 |
BCP54,115 | NEXPERIA |
Category: NPN SMD transistors Description: Transistor: NPN; bipolar; 45V; 1A; 1.35W; SC73,SOT223 Type of transistor: NPN Polarisation: bipolar Collector-emitter voltage: 45V Collector current: 1A Case: SC73; SOT223 Mounting: SMD Kind of package: reel; tape Frequency: 180MHz Power dissipation: 1.35W |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
 |
BCP54-16,115 | NEXPERIA |
Category: NPN SMD transistors Description: Transistor: NPN; bipolar; 45V; 1A; 1.35W; SC73,SOT223 Type of transistor: NPN Polarisation: bipolar Collector-emitter voltage: 45V Collector current: 1A Power dissipation: 1.35W Case: SC73; SOT223 Current gain: 100...250 Mounting: SMD Kind of package: reel; tape Frequency: 180MHz |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
|
|
BCP54-16,135 | NEXPERIA |
Category: NPN SMD transistors Description: Transistor: NPN; bipolar; 45V; 1A; 1.35W; SC73,SOT223 Type of transistor: NPN Polarisation: bipolar Collector-emitter voltage: 45V Collector current: 1A Power dissipation: 1.35W Case: SC73; SOT223 Current gain: 100...250 Mounting: SMD Kind of package: reel; tape Frequency: 180MHz |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 5 Stücke Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
|
|
BCP54-16TF | NEXPERIA |
Category: NPN SMD transistors Description: Transistor: NPN; bipolar; 45V; 1A; 1.8W; SC73,SOT223 Type of transistor: NPN Polarisation: bipolar Collector-emitter voltage: 45V Collector current: 1A Power dissipation: 1.8W Case: SC73; SOT223 Current gain: 100...250 Mounting: SMD Kind of package: reel; tape Frequency: 155MHz |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 5 Stücke Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
 |
BCP54-QX | NEXPERIA |
Category: NPN SMD transistors Description: Transistor: NPN; bipolar; 45V; 1A; SC73,SOT223 Type of transistor: NPN Polarisation: bipolar Collector-emitter voltage: 45V Collector current: 1A Case: SC73; SOT223 Current gain: 63...250 Mounting: SMD Kind of package: reel; tape Frequency: 180MHz Application: automotive industry |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
|
|
BCP54-16-QX | NEXPERIA |
Category: NPN SMD transistors Description: Transistor: NPN; bipolar; 45V; 1A; 1.35W; SC73,SOT223 Type of transistor: NPN Polarisation: bipolar Collector-emitter voltage: 45V Collector current: 1A Power dissipation: 1.35W Case: SC73; SOT223 Current gain: 100...250 Mounting: SMD Kind of package: reel; tape Frequency: 180MHz Application: automotive industry |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
 |
HEF4030BT,653 | NEXPERIA |
Category: Gates, inverters Description: IC: digital; XOR; Ch: 4; IN: 2; CMOS; SMD; SO14; 3÷15VDC; -40÷125°C Operating temperature: -40...125°C Mounting: SMD Supply voltage: 3...15V DC Kind of gate: XOR Type of integrated circuit: digital Technology: CMOS Quiescent current: 30µA Number of inputs: 2 Kind of package: reel; tape Case: SO14 Family: HEF4000B Number of channels: quad; 4 |
auf Bestellung 1378 Stücke: Lieferzeit 14-21 Tag (e) |
|
||||||||||||||
|
|
74AHC132D,118 | NEXPERIA |
Category: Gates, inverters Description: IC: digital; NAND; Ch: 4; IN: 2; CMOS; SMD; SO14; 2÷5.5VDC; -40÷125°C Type of integrated circuit: digital Mounting: SMD Delay time: 19.5ns Supply voltage: 2...5.5V DC Kind of gate: NAND Operating temperature: -40...125°C Technology: CMOS Quiescent current: 40µA Kind of input: with Schmitt trigger Number of inputs: 2 Kind of package: reel; tape Case: SO14 Family: AHC Number of channels: quad; 4 |
auf Bestellung 1545 Stücke: Lieferzeit 14-21 Tag (e) |
|
||||||||||||||
| 74AHC132BQ,115 | NEXPERIA |
Category: Gates, inverters Description: IC: digital; NAND; Ch: 4; IN: 2; CMOS; SMD; DHVQFN14; 2÷5.5VDC; 40uA Type of integrated circuit: digital Mounting: SMD Delay time: 19.5ns Supply voltage: 2...5.5V DC Kind of gate: NAND Operating temperature: -40...125°C Technology: CMOS Quiescent current: 40µA Kind of input: with Schmitt trigger Number of inputs: 2 Kind of package: reel; tape Case: DHVQFN14 Family: AHC Number of channels: quad; 4 |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 3000 Stücke Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||
 |
74AHC132PW,118 | NEXPERIA |
Category: Gates, inverters Description: IC: digital; NAND; Ch: 4; IN: 2; CMOS; SMD; TSSOP14; 2÷5.5VDC; 40uA Type of integrated circuit: digital Mounting: SMD Delay time: 19.5ns Supply voltage: 2...5.5V DC Kind of gate: NAND Operating temperature: -40...125°C Technology: CMOS Quiescent current: 40µA Kind of input: with Schmitt trigger Number of inputs: 2 Kind of package: reel; tape Case: TSSOP14 Family: AHC Number of channels: quad; 4 |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 2500 Stücke Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
| PBSS4630PA,115 | NEXPERIA |
Category: NPN SMD transistors Description: Transistor: NPN; bipolar; 30V; 6A; DFN2020-3,SOT1061 Mounting: SMD Collector current: 6A Collector-emitter voltage: 30V Current gain: 180...450 Frequency: 115MHz Kind of package: reel; tape Polarisation: bipolar Case: DFN2020-3; SOT1061 Type of transistor: NPN |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||
 |
PMEG2010ER,115 | NEXPERIA |
Category: SMD Schottky diodes Description: Diode: Schottky rectifying; CFP3,SOD123W; SMD; 20V; 1A; reel,tape Type of diode: Schottky rectifying Case: CFP3; SOD123W Mounting: SMD Max. off-state voltage: 20V Load current: 1A Semiconductor structure: single diode Capacitance: 175pF Max. forward voltage: 0.34V Max. load current: 7A Max. forward impulse current: 50A Kind of package: reel; tape Power dissipation: 1.8W |
auf Bestellung 1145 Stücke: Lieferzeit 14-21 Tag (e) |
|
||||||||||||||
 |
PMEG2010EH,115 | NEXPERIA |
Category: SMD Schottky diodes Description: Diode: Schottky rectifying; SOD123F; SMD; 20V; 1A; reel,tape Type of diode: Schottky rectifying Case: SOD123F Mounting: SMD Max. off-state voltage: 20V Load current: 1A Semiconductor structure: single diode Max. forward voltage: 0.5V Kind of package: reel; tape Capacitance: 80pF Max. forward impulse current: 9A Max. load current: 7A |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
 |
PMEG2010EJ,115 | NEXPERIA |
Category: SMD Schottky diodes Description: Diode: Schottky rectifying; SC90,SOD323F; SMD; 20V; 1A; reel,tape Type of diode: Schottky rectifying Case: SC90; SOD323F Mounting: SMD Max. off-state voltage: 20V Load current: 1A Semiconductor structure: single diode Capacitance: 80pF Max. forward voltage: 0.5V Kind of package: reel; tape |
auf Bestellung 78 Stücke: Lieferzeit 14-21 Tag (e) |
|
||||||||||||||
|
|
74AHC08PW,118 | NEXPERIA |
Category: Gates, inverters Description: IC: digital; AND; Ch: 4; IN: 2; CMOS; SMD; TSSOP14; 2÷5.5VDC; -40÷125°C Type of integrated circuit: digital Mounting: SMD Delay time: 15.5ns Supply voltage: 2...5.5V DC Kind of gate: AND Operating temperature: -40...125°C Technology: CMOS Quiescent current: 40µA Number of inputs: 2 Kind of package: reel; tape Case: TSSOP14 Family: AHC Number of channels: quad; 4 |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
| 74AHC08BQ,115 | NEXPERIA |
Category: Gates, inverters Description: IC: digital; AND; Ch: 4; IN: 2; CMOS; SMD; DHVQFN14; 2÷5.5VDC; 40uA Type of integrated circuit: digital Mounting: SMD Delay time: 15.5ns Supply voltage: 2...5.5V DC Kind of gate: AND Operating temperature: -40...125°C Technology: CMOS Quiescent current: 40µA Number of inputs: 2 Kind of package: reel; tape Case: DHVQFN14 Family: AHC Number of channels: quad; 4 |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||
|
|
74AHC08D,118 | NEXPERIA |
Category: Gates, inverters Description: IC: digital; AND; Ch: 4; IN: 2; CMOS; SMD; SO14; 2÷5.5VDC; -40÷125°C Type of integrated circuit: digital Mounting: SMD Supply voltage: 2...5.5V DC Kind of gate: AND Operating temperature: -40...125°C Technology: CMOS Quiescent current: 40µA Number of inputs: 2 Kind of package: reel; tape Case: SO14 Family: AHC Number of channels: quad; 4 |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 12500 Stücke Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
| 74VHC08BQ,115 | NEXPERIA |
Category: Gates, inverters Description: IC: digital; AND; Ch: 4; IN: 2; CMOS; SMD; DHVQFN14; 2÷5.5VDC; VHC Type of integrated circuit: digital Mounting: SMD Supply voltage: 2...5.5V DC Kind of gate: AND Operating temperature: -40...125°C Technology: CMOS Number of inputs: 2 Kind of package: reel; tape Case: DHVQFN14 Family: VHC Number of channels: 4 |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 6000 Stücke Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||
| 74VHC08D,118 | NEXPERIA |
Category: Gates, inverters Description: IC: digital; AND; Ch: 4; IN: 2; CMOS; SMD; SO14; 2÷5.5VDC; -40÷125°C Type of integrated circuit: digital Kind of gate: AND Technology: CMOS Case: SO14 Number of channels: 4 Kind of package: reel; tape Mounting: SMD Operating temperature: -40...125°C Number of inputs: 2 Supply voltage: 2...5.5V DC Family: VHC |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 7500 Stücke Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||
 |
74HC151PW,118 | NEXPERIA |
Category: Decoders, multiplexers, switches Description: IC: digital; 8bit,multiplexer; Ch: 8; IN: 8; CMOS; SMD; TSSOP16; HC Type of integrated circuit: digital Kind of integrated circuit: 8bit; multiplexer Number of channels: 8 Number of inputs: 8 Mounting: SMD Case: TSSOP16 Family: HC Operating temperature: -40...125°C Supply voltage: 2...6V DC Technology: CMOS Kind of package: reel; tape |
auf Bestellung 1888 Stücke: Lieferzeit 14-21 Tag (e) |
|
||||||||||||||
|
|
74HC05D,118 | NEXPERIA |
Category: Gates, inverters Description: IC: digital; NOT; Ch: 6; CMOS; SMD; SO14; 2÷6VDC; -40÷125°C; reel,tape Type of integrated circuit: digital Kind of gate: NOT Number of channels: hex; 6 Mounting: SMD Case: SO14 Supply voltage: 2...6V DC Operating temperature: -40...125°C Kind of package: reel; tape Quiescent current: 40µA Family: HC Delay time: 135ns Kind of output: open drain Technology: CMOS |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 2500 Stücke Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
 |
PSMN057-200P,127 | NEXPERIA |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 200V; 39A; Idm: 156A; 250W Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 200V Drain current: 39A Pulsed drain current: 156A Power dissipation: 250W Case: SOT78; TO220AB Gate-source voltage: ±20V On-state resistance: 41mΩ Mounting: THT Gate charge: 96nC Kind of package: tube Kind of channel: enhancement |
auf Bestellung 548 Stücke: Lieferzeit 14-21 Tag (e) |
|
||||||||||||||
 |
MJD44H11J | NEXPERIA |
Category: NPN SMD transistors Description: Transistor: NPN; bipolar; 80V; 8A; 20W; DPAK,TO252 Type of transistor: NPN Polarisation: bipolar Collector-emitter voltage: 80V Collector current: 8A Power dissipation: 20W Case: DPAK; TO252 Current gain: 40...60 Mounting: SMD Kind of package: reel; tape Frequency: 160MHz |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 2500 Stücke Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
 |
BUK7Y8R7-60EX | NEXPERIA |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 60V; 61A; Idm: 347A; 147W On-state resistance: 19.5mΩ Mounting: SMD Pulsed drain current: 347A Power dissipation: 147W Gate charge: 46nC Polarisation: unipolar Drain current: 61A Kind of channel: enhancement Drain-source voltage: 60V Application: automotive industry Type of transistor: N-MOSFET Kind of package: reel; tape Case: LFPAK56; PowerSO8; SOT669 |
auf Bestellung 34 Stücke: Lieferzeit 14-21 Tag (e) |
|
||||||||||||||
 |
BUK7Y7R0-40HX | NEXPERIA |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 40V; 48A; Idm: 272A; 64W On-state resistance: 13.6mΩ Mounting: SMD Pulsed drain current: 272A Power dissipation: 64W Gate charge: 26nC Polarisation: unipolar Drain current: 48A Kind of channel: enhancement Drain-source voltage: 40V Application: automotive industry Type of transistor: N-MOSFET Gate-source voltage: ±20V Kind of package: reel; tape Case: LFPAK56; PowerSO8; SOT669 |
auf Bestellung 1362 Stücke: Lieferzeit 14-21 Tag (e) |
|
||||||||||||||
 |
BUK7M6R3-40EX | NEXPERIA |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 40V; 56.4A; Idm: 319A; 79W On-state resistance: 12.5mΩ Mounting: SMD Pulsed drain current: 319A Power dissipation: 79W Gate charge: 28.1nC Polarisation: unipolar Drain current: 56.4A Kind of channel: enhancement Drain-source voltage: 40V Application: automotive industry Type of transistor: N-MOSFET Kind of package: reel; tape Case: LFPAK33; SOT1210 |
auf Bestellung 1489 Stücke: Lieferzeit 14-21 Tag (e) |
|
||||||||||||||
 |
BUK7M33-60EX | NEXPERIA |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 60V; 17A; Idm: 98A; 44W On-state resistance: 74mΩ Mounting: SMD Pulsed drain current: 98A Power dissipation: 44W Gate charge: 10.9nC Polarisation: unipolar Drain current: 17A Kind of channel: enhancement Drain-source voltage: 60V Application: automotive industry Type of transistor: N-MOSFET Kind of package: reel; tape Case: LFPAK33; SOT1210 |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
|
|
BUK78150-55A/CUX | NEXPERIA |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 55V; 3.8A; Idm: 22A; 8W; SC73,SOT223 On-state resistance: 278mΩ Mounting: SMD Pulsed drain current: 22A Power dissipation: 8W Polarisation: unipolar Drain current: 3.8A Kind of channel: enhancement Drain-source voltage: 55V Application: automotive industry Type of transistor: N-MOSFET Kind of package: reel; tape Case: SC73; SOT223 |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
 |
BUK763R8-80E,118 | NEXPERIA |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 80V; 120A; Idm: 778A; 349W On-state resistance: 9.2mΩ Mounting: SMD Pulsed drain current: 778A Power dissipation: 349W Gate charge: 169nC Polarisation: unipolar Drain current: 120A Kind of channel: enhancement Drain-source voltage: 80V Application: automotive industry Type of transistor: N-MOSFET Gate-source voltage: ±20V Kind of package: reel; tape Case: D2PAK; SOT404 |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
| BUK7K6R2-40EX | NEXPERIA |
Category: Multi channel transistors Description: Transistor: N-MOSFET x2; unipolar; 40V; 40A; Idm: 308A; 68W On-state resistance: 5.8mΩ Mounting: SMD Pulsed drain current: 308A Power dissipation: 68W Gate charge: 32.3nC Polarisation: unipolar Drain current: 40A Kind of channel: enhancement Drain-source voltage: 40V Application: automotive industry Type of transistor: N-MOSFET x2 Gate-source voltage: ±20V Kind of package: reel; tape Case: LFPAK56D; SOT1205 |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||
| BUK7K8R7-40EX | NEXPERIA |
Category: Multi channel transistors Description: Transistor: N-MOSFET x2; unipolar; 40V; 30A; Idm: 22.5A; 53W On-state resistance: 8.5mΩ Mounting: SMD Pulsed drain current: 22.5A Power dissipation: 53W Gate charge: 21.8nC Polarisation: unipolar Drain current: 30A Kind of channel: enhancement Drain-source voltage: 40V Application: automotive industry Type of transistor: N-MOSFET x2 Gate-source voltage: ±20V Kind of package: reel; tape Case: LFPAK56D; SOT1205 |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||
| BUK7K52-60EX | NEXPERIA |
Category: Multi channel transistors Description: Transistor: N-MOSFET x2; unipolar; 60V; 12.6A; Idm: 71A; 32W On-state resistance: 101mΩ Mounting: SMD Pulsed drain current: 71A Power dissipation: 32W Gate charge: 9.2nC Polarisation: unipolar Drain current: 12.6A Kind of channel: enhancement Drain-source voltage: 60V Application: automotive industry Type of transistor: N-MOSFET x2 Gate-source voltage: ±20V Kind of package: reel; tape Case: LFPAK33; SOT1210 |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||
|
|
BUK7880-55A/CUX | NEXPERIA |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 55V; 5A; Idm: 30A; 8W; SC73,SOT223 On-state resistance: 148mΩ Mounting: SMD Pulsed drain current: 30A Power dissipation: 8W Gate charge: 12nC Polarisation: unipolar Drain current: 5A Kind of channel: enhancement Drain-source voltage: 55V Application: automotive industry Type of transistor: N-MOSFET Gate-source voltage: ±20V Kind of package: reel; tape Case: SC73; SOT223 |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
| BUK7D36-60EX | NEXPERIA |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 60V; 8.9A; Idm: 56A; 15W On-state resistance: 76mΩ Mounting: SMD Pulsed drain current: 56A Power dissipation: 15W Gate charge: 14nC Polarisation: unipolar Drain current: 8.9A Kind of channel: enhancement Drain-source voltage: 60V Application: automotive industry Type of transistor: N-MOSFET Gate-source voltage: ±20V Kind of package: reel; tape Case: DFN6; SOT1220 |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||
 |
BUK7613-60E,118 | NEXPERIA |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 60V; 41A; Idm: 234A; 96W On-state resistance: 28.2mΩ Mounting: SMD Pulsed drain current: 234A Power dissipation: 96W Gate charge: 22.9nC Polarisation: unipolar Drain current: 41A Kind of channel: enhancement Drain-source voltage: 60V Application: automotive industry Type of transistor: N-MOSFET Gate-source voltage: ±20V Kind of package: reel; tape Case: D2PAK; SOT404 |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
| BUK7D25-40EX | NEXPERIA |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; Trench; unipolar; 40V; 12A; Idm: 76A; 15W Mounting: SMD Gate charge: 13nC Polarisation: unipolar Technology: Trench Drain current: 12A Kind of channel: enhancement Drain-source voltage: 40V Application: automotive industry Type of transistor: N-MOSFET Kind of package: reel; tape Case: DFN2020MD-6; SOT1220 On-state resistance: 46mΩ Pulsed drain current: 76A Power dissipation: 15W |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||
| BUK7M27-80EX | NEXPERIA |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 80V; 21.3A; Idm: 121A; 62W On-state resistance: 68mΩ Mounting: SMD Pulsed drain current: 121A Power dissipation: 62W Gate charge: 19.5nC Polarisation: unipolar Drain current: 21.3A Kind of channel: enhancement Drain-source voltage: 80V Application: automotive industry Type of transistor: N-MOSFET Gate-source voltage: ±20V Kind of package: reel; tape Case: LFPAK33; SOT1210 |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||
| BUK7Y3R5-40E,115 | NEXPERIA |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 40V; 100A; Idm: 622A; 167W On-state resistance: 3.5mΩ Mounting: SMD Pulsed drain current: 622A Power dissipation: 167W Gate charge: 49.4nC Polarisation: unipolar Drain current: 100A Kind of channel: enhancement Drain-source voltage: 40V Application: automotive industry Type of transistor: N-MOSFET Gate-source voltage: ±20V Kind of package: reel; tape Case: LFPAK56; PowerSO8; SOT669 |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||
| BUK7Y9R9-80EX | NEXPERIA |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 80V; 63A; Idm: 354A; 195W On-state resistance: 24.9mΩ Mounting: SMD Pulsed drain current: 354A Power dissipation: 195W Gate charge: 51.6nC Polarisation: unipolar Drain current: 63A Kind of channel: enhancement Drain-source voltage: 80V Application: automotive industry Type of transistor: N-MOSFET Gate-source voltage: ±20V Kind of package: reel; tape Case: LFPAK56; PowerSO8; SOT669 |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||
| BUK7Y153-100EX | NEXPERIA |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 100V; 6.7A; Idm: 37.5A; 37.3W On-state resistance: 424mΩ Mounting: SMD Pulsed drain current: 37.5A Power dissipation: 37.3W Gate charge: 9.4nC Polarisation: unipolar Drain current: 6.7A Kind of channel: enhancement Drain-source voltage: 100V Application: automotive industry Type of transistor: N-MOSFET Gate-source voltage: ±20V Kind of package: reel; tape Case: LFPAK56; PowerSO8; SOT669 |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||
 |
BZV55-B3V6,115 | NEXPERIA |
Category: SMD Zener diodes Description: Diode: Zener; 0.4/0.5W; 3.6V; SMD; SOD80C; reel,tape; Ifmax: 250mA Type of diode: Zener Power dissipation: 0.4/0.5W Zener voltage: 3.6V Mounting: SMD Tolerance: ±2% Max. forward voltage: 0.9V Case: SOD80C Kind of package: reel; tape Max. load current: 0.25A Semiconductor structure: single diode |
auf Bestellung 375 Stücke: Lieferzeit 14-21 Tag (e) |
|
||||||||||||||
|
|
BZV55-C8V2,115 | NEXPERIA |
Category: SMD Zener diodes Description: Diode: Zener; 0.4/0.5W; 8.2V; SMD; SOD80C; Ifmax: 250mA; reel,tape Type of diode: Zener Power dissipation: 0.4/0.5W Zener voltage: 8.2V Mounting: SMD Tolerance: ±5% Max. forward voltage: 0.9V Case: SOD80C Max. load current: 0.25A Semiconductor structure: single diode Kind of package: reel; tape |
auf Bestellung 5775 Stücke: Lieferzeit 14-21 Tag (e) |
|
||||||||||||||
| BZV55-C8V2,135 | NEXPERIA |
Category: SMD Zener diodes Description: Diode: Zener; 0.4/0.5W; 8.2V; SMD; SOD80C; reel,tape; Ifmax: 250mA Type of diode: Zener Power dissipation: 0.4/0.5W Zener voltage: 8.2V Mounting: SMD Tolerance: ±5% Max. forward voltage: 0.9V Case: SOD80C Kind of package: reel; tape Max. load current: 0.25A Semiconductor structure: single diode |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 25 Stücke Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||
|
|
74LVC00AD,118 | NEXPERIA |
Category: Gates, inverters Description: IC: digital; NAND; Ch: 4; IN: 2; CMOS,TTL; SMD; SO14; -40÷125°C; 40uA Type of integrated circuit: digital Mounting: SMD Delay time: 12ns Supply voltage: 1.2V DC; 1.65...3.6V DC Kind of gate: NAND Operating temperature: -40...125°C Technology: CMOS; TTL Quiescent current: 40µA Number of inputs: 2 Kind of package: reel; tape Case: SO14 Family: LVC Number of channels: quad; 4 |
auf Bestellung 2864 Stücke: Lieferzeit 14-21 Tag (e) |
|
||||||||||||||
|
|
74LVC00APW,118 | NEXPERIA |
Category: Gates, inverters Description: IC: digital; NAND; Ch: 4; IN: 2; CMOS,TTL; SMD; TSSOP14; 1.65÷5.5VDC Type of integrated circuit: digital Mounting: SMD Supply voltage: 1.65...5.5V DC Kind of gate: NAND Operating temperature: -40...125°C Technology: CMOS; TTL Quiescent current: 40µA Number of inputs: 2 Kind of package: reel; tape Case: TSSOP14 Family: LVC Number of channels: quad; 4 |
auf Bestellung 1531 Stücke: Lieferzeit 14-21 Tag (e) |
|
||||||||||||||
 |
74LVC00ADB,112 | NEXPERIA |
Category: Gates, inverters Description: IC: digital; NAND; Ch: 4; IN: 2; CMOS,TTL; SMD; SSOP14; 1.2÷3.6VDC Type of integrated circuit: digital Mounting: SMD Supply voltage: 1.2...3.6V DC Kind of gate: NAND Operating temperature: -40...125°C Technology: CMOS; TTL Number of inputs: 2 Kind of package: tube Case: SSOP14 Family: LVC Number of channels: quad; 4 |
auf Bestellung 26 Stücke: Lieferzeit 14-21 Tag (e) |
|
||||||||||||||
| 74LVC00ABQ,115 | NEXPERIA |
Category: Gates, inverters Description: IC: digital; NAND; Ch: 4; IN: 2; CMOS,TTL; SMD; DHVQFN14; -40÷125°C Type of integrated circuit: digital Mounting: SMD Delay time: 12ns Supply voltage: 1.2V DC; 1.65...3.6V DC Kind of gate: NAND Operating temperature: -40...125°C Technology: CMOS; TTL Quiescent current: 40µA Number of inputs: 2 Kind of package: reel; tape Case: DHVQFN14 Family: LVC Number of channels: quad; 4 |
auf Bestellung 3000 Stücke: Lieferzeit 14-21 Tag (e) |
|
|||||||||||||||
| GAN080-650EBEZ | NEXPERIA |
Category: SMD N channel transistors Description: Transistor: N-JFET; GaN; unipolar; HEMT; 650V; 29A; Idm: 58A; 240W Type of transistor: N-JFET Technology: GaN Polarisation: unipolar Kind of transistor: HEMT Drain-source voltage: 650V Drain current: 29A Pulsed drain current: 58A Case: DFN8080-8 Gate-source voltage: -6...7V On-state resistance: 80mΩ Mounting: SMD Gate charge: 6.2nC Kind of package: tape Kind of channel: enhancement Features of semiconductor devices: Kelvin terminal Power dissipation: 240W |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 2500 Stücke Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||
| GAN140-650EBEZ | NEXPERIA |
Category: SMD N channel transistors Description: Transistor: N-JFET; GaN; unipolar; HEMT; 650V; 17A; Idm: 32A; 113W Type of transistor: N-JFET Technology: GaN Polarisation: unipolar Kind of transistor: HEMT Drain-source voltage: 650V Drain current: 17A Pulsed drain current: 32A Case: DFN8080-8 Gate-source voltage: -1.4...7V On-state resistance: 0.14Ω Mounting: SMD Gate charge: 3.5nC Kind of package: tape Kind of channel: enhancement Features of semiconductor devices: Kelvin terminal Power dissipation: 113W |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 2500 Stücke Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||
| GAN140-650FBEZ | NEXPERIA |
Category: SMD N channel transistors Description: Transistor: N-JFET; GaN; unipolar; HEMT; 650V; 17A; Idm: 32A; 113W Type of transistor: N-JFET Technology: GaN Polarisation: unipolar Kind of transistor: HEMT Drain-source voltage: 650V Drain current: 17A Pulsed drain current: 32A Case: DFN5060-5 Gate-source voltage: -1.4...7V On-state resistance: 0.14Ω Mounting: SMD Gate charge: 3.5nC Kind of package: tape Kind of channel: enhancement Features of semiconductor devices: Kelvin terminal Power dissipation: 113W |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 2500 Stücke Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||
| GAN190-650EBEZ | NEXPERIA |
Category: SMD N channel transistors Description: Transistor: N-JFET; GaN; unipolar; HEMT; 650V; 11.5A; Idm: 20.5A Type of transistor: N-JFET Technology: GaN Polarisation: unipolar Kind of transistor: HEMT Drain-source voltage: 650V Drain current: 11.5A Pulsed drain current: 20.5A Case: DFN8080-8 Gate-source voltage: -1.4...7V On-state resistance: 0.19Ω Mounting: SMD Gate charge: 2.8nC Kind of package: tape Kind of channel: enhancement Features of semiconductor devices: Kelvin terminal Power dissipation: 125W |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 2500 Stücke Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||
| GAN190-650FBEZ | NEXPERIA |
Category: SMD N channel transistors Description: Transistor: N-JFET; GaN; unipolar; HEMT; 650V; 11.5A; Idm: 20.5A Type of transistor: N-JFET Technology: GaN Polarisation: unipolar Kind of transistor: HEMT Drain-source voltage: 650V Drain current: 11.5A Pulsed drain current: 20.5A Case: DFN5060-5 Gate-source voltage: -1.4...7V On-state resistance: 0.19Ω Mounting: SMD Gate charge: 2.8nC Kind of package: tape Kind of channel: enhancement Features of semiconductor devices: Kelvin terminal Power dissipation: 125W |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 2500 Stücke Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||
| GAN3R2-100CBEAZ | NEXPERIA |
Category: SMD N channel transistors Description: Transistor: N-JFET; GaN; unipolar; HEMT; 100V; 60A; Idm: 230A; 394W Type of transistor: N-JFET Technology: GaN Polarisation: unipolar Kind of transistor: HEMT Drain-source voltage: 100V Drain current: 60A Pulsed drain current: 230A Case: WLCSP8 Gate-source voltage: -4...6V On-state resistance: 3.2mΩ Mounting: SMD Gate charge: 12nC Kind of package: tape Kind of channel: enhancement Power dissipation: 394W |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 1500 Stücke Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||
| GAN7R0-150LBEZ | NEXPERIA |
Category: SMD N channel transistors Description: Transistor: N-JFET; GaN; unipolar; HEMT; 150V; 28A; Idm: 120A; 28W Type of transistor: N-JFET Technology: GaN Polarisation: unipolar Kind of transistor: HEMT Drain-source voltage: 150V Drain current: 28A Pulsed drain current: 120A Case: FCLGA3 Gate-source voltage: -4...6V On-state resistance: 7mΩ Mounting: SMD Gate charge: 7.6nC Kind of package: tape Kind of channel: enhancement Power dissipation: 28W |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 2500 Stücke Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||
 |
PDTC123JT-QR | NEXPERIA |
Category: NPN SMD transistors Description: Transistor: NPN; bipolar; BRT; 50V; 0.1A; 0.25W; SOT23,TO236AB Type of transistor: NPN Polarisation: bipolar Kind of transistor: BRT Collector-emitter voltage: 50V Collector current: 0.1A Power dissipation: 0.25W Case: SOT23; TO236AB Mounting: SMD Kind of package: 7 inch reel; tape Base resistor: 2.2kΩ Base-emitter resistor: 47kΩ Application: automotive industry Frequency: 230MHz |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH |
| 74HC2G16GVH |
|
Hersteller: NEXPERIA
Category: Buffers, transceivers, drivers
Description: IC: digital; buffer,non-inverting; Ch: 2; CMOS; SMD; TSOP6; 2÷6VDC
Mounting: SMD
Supply voltage: 2...6V DC
Manufacturer series: Mini Logic
Type of integrated circuit: digital
Kind of output: push-pull
Operating temperature: -40...125°C
Technology: CMOS
Kind of package: reel; tape
Case: TSOP6
Family: HC
Kind of integrated circuit: buffer; non-inverting
Number of channels: 2
Category: Buffers, transceivers, drivers
Description: IC: digital; buffer,non-inverting; Ch: 2; CMOS; SMD; TSOP6; 2÷6VDC
Mounting: SMD
Supply voltage: 2...6V DC
Manufacturer series: Mini Logic
Type of integrated circuit: digital
Kind of output: push-pull
Operating temperature: -40...125°C
Technology: CMOS
Kind of package: reel; tape
Case: TSOP6
Family: HC
Kind of integrated circuit: buffer; non-inverting
Number of channels: 2
auf Bestellung 6433 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 167+ | 0.51 EUR |
| 211+ | 0.4 EUR |
| 237+ | 0.36 EUR |
| 281+ | 0.3 EUR |
| 500+ | 0.27 EUR |
| 1000+ | 0.25 EUR |
| 3000+ | 0.24 EUR |
| 74HC4050D,653 |
|
Hersteller: NEXPERIA
Category: Buffers, transceivers, drivers
Description: IC: digital; buffer,non-inverting; Ch: 6; CMOS; SMD; SO16; -40÷125°C
Type of integrated circuit: digital
Mounting: SMD
Supply voltage: 2...6V DC
Kind of output: push-pull
Operating temperature: -40...125°C
Technology: CMOS
Quiescent current: 40µA
Kind of package: reel; tape
Case: SO16
Family: HC
Kind of integrated circuit: buffer; non-inverting
Number of channels: 6
Category: Buffers, transceivers, drivers
Description: IC: digital; buffer,non-inverting; Ch: 6; CMOS; SMD; SO16; -40÷125°C
Type of integrated circuit: digital
Mounting: SMD
Supply voltage: 2...6V DC
Kind of output: push-pull
Operating temperature: -40...125°C
Technology: CMOS
Quiescent current: 40µA
Kind of package: reel; tape
Case: SO16
Family: HC
Kind of integrated circuit: buffer; non-inverting
Number of channels: 6
auf Bestellung 190 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 139+ | 0.61 EUR |
| 184+ | 0.46 EUR |
| 190+ | 0.44 EUR |
| 74LVC1G14GW,125 |
|
Hersteller: NEXPERIA
Category: Gates, inverters
Description: IC: digital; NOT; Ch: 1; CMOS,TTL; SMD; TSSOP5; Mini Logic; reel,tape
Type of integrated circuit: digital
Kind of gate: NOT
Number of channels: single; 1
Technology: CMOS; TTL
Mounting: SMD
Case: TSSOP5
Manufacturer series: Mini Logic
Kind of package: reel; tape
Kind of input: with Schmitt trigger
Family: LVC
Category: Gates, inverters
Description: IC: digital; NOT; Ch: 1; CMOS,TTL; SMD; TSSOP5; Mini Logic; reel,tape
Type of integrated circuit: digital
Kind of gate: NOT
Number of channels: single; 1
Technology: CMOS; TTL
Mounting: SMD
Case: TSSOP5
Manufacturer series: Mini Logic
Kind of package: reel; tape
Kind of input: with Schmitt trigger
Family: LVC
auf Bestellung 18008 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 556+ | 0.15 EUR |
| 1000+ | 0.086 EUR |
| 1158+ | 0.074 EUR |
| 1238+ | 0.069 EUR |
| 1401+ | 0.061 EUR |
| 1558+ | 0.055 EUR |
| 1583+ | 0.054 EUR |
| 74LVC244APW,118 |
|
Hersteller: NEXPERIA
Category: Buffers, transceivers, drivers
Description: IC: digital; 8bit,buffer,line driver; CMOS; SMD; TSSOP20; LVC
Operating temperature: -40...125°C
Kind of package: reel; tape
Case: TSSOP20
Family: LVC
Kind of integrated circuit: 8bit; buffer; line driver
Mounting: SMD
Supply voltage: 1.2...3.6V DC
Type of integrated circuit: digital
Kind of output: 3-state
Technology: CMOS
Category: Buffers, transceivers, drivers
Description: IC: digital; 8bit,buffer,line driver; CMOS; SMD; TSSOP20; LVC
Operating temperature: -40...125°C
Kind of package: reel; tape
Case: TSSOP20
Family: LVC
Kind of integrated circuit: 8bit; buffer; line driver
Mounting: SMD
Supply voltage: 1.2...3.6V DC
Type of integrated circuit: digital
Kind of output: 3-state
Technology: CMOS
auf Bestellung 14 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 14+ | 6.08 EUR |
| PTVS5V0S1UR,115 |
|
Hersteller: NEXPERIA
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 400W; 6.7V; 43.5A; unidirectional; SOD123W; max.150°C
Type of diode: TVS
Peak pulse power dissipation: 0.4kW
Max. off-state voltage: 5V
Breakdown voltage: 6.7V
Max. forward impulse current: 43.5A
Semiconductor structure: unidirectional
Case: SOD123W
Mounting: SMD
Leakage current: 5µA
Operating temperature: max. 150°C
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 400W; 6.7V; 43.5A; unidirectional; SOD123W; max.150°C
Type of diode: TVS
Peak pulse power dissipation: 0.4kW
Max. off-state voltage: 5V
Breakdown voltage: 6.7V
Max. forward impulse current: 43.5A
Semiconductor structure: unidirectional
Case: SOD123W
Mounting: SMD
Leakage current: 5µA
Operating temperature: max. 150°C
auf Bestellung 2317 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 186+ | 0.46 EUR |
| 222+ | 0.38 EUR |
| 336+ | 0.25 EUR |
| 421+ | 0.2 EUR |
| 455+ | 0.19 EUR |
| 500+ | 0.18 EUR |
| 1000+ | 0.17 EUR |
| BCP54,115 |
|
Hersteller: NEXPERIA
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 45V; 1A; 1.35W; SC73,SOT223
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 45V
Collector current: 1A
Case: SC73; SOT223
Mounting: SMD
Kind of package: reel; tape
Frequency: 180MHz
Power dissipation: 1.35W
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 45V; 1A; 1.35W; SC73,SOT223
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 45V
Collector current: 1A
Case: SC73; SOT223
Mounting: SMD
Kind of package: reel; tape
Frequency: 180MHz
Power dissipation: 1.35W
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| BCP54-16,115 |
|
Hersteller: NEXPERIA
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 45V; 1A; 1.35W; SC73,SOT223
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 45V
Collector current: 1A
Power dissipation: 1.35W
Case: SC73; SOT223
Current gain: 100...250
Mounting: SMD
Kind of package: reel; tape
Frequency: 180MHz
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 45V; 1A; 1.35W; SC73,SOT223
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 45V
Collector current: 1A
Power dissipation: 1.35W
Case: SC73; SOT223
Current gain: 100...250
Mounting: SMD
Kind of package: reel; tape
Frequency: 180MHz
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| BCP54-16,135 |
|
Hersteller: NEXPERIA
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 45V; 1A; 1.35W; SC73,SOT223
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 45V
Collector current: 1A
Power dissipation: 1.35W
Case: SC73; SOT223
Current gain: 100...250
Mounting: SMD
Kind of package: reel; tape
Frequency: 180MHz
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 45V; 1A; 1.35W; SC73,SOT223
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 45V
Collector current: 1A
Power dissipation: 1.35W
Case: SC73; SOT223
Current gain: 100...250
Mounting: SMD
Kind of package: reel; tape
Frequency: 180MHz
Produkt ist nicht verfügbar
Mindestbestellmenge: 5 Stücke
Im Einkaufswagen
Stück im Wert von UAH
| BCP54-16TF |
|
Hersteller: NEXPERIA
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 45V; 1A; 1.8W; SC73,SOT223
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 45V
Collector current: 1A
Power dissipation: 1.8W
Case: SC73; SOT223
Current gain: 100...250
Mounting: SMD
Kind of package: reel; tape
Frequency: 155MHz
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 45V; 1A; 1.8W; SC73,SOT223
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 45V
Collector current: 1A
Power dissipation: 1.8W
Case: SC73; SOT223
Current gain: 100...250
Mounting: SMD
Kind of package: reel; tape
Frequency: 155MHz
Produkt ist nicht verfügbar
Mindestbestellmenge: 5 Stücke
Im Einkaufswagen
Stück im Wert von UAH
| BCP54-QX |
|
Hersteller: NEXPERIA
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 45V; 1A; SC73,SOT223
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 45V
Collector current: 1A
Case: SC73; SOT223
Current gain: 63...250
Mounting: SMD
Kind of package: reel; tape
Frequency: 180MHz
Application: automotive industry
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 45V; 1A; SC73,SOT223
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 45V
Collector current: 1A
Case: SC73; SOT223
Current gain: 63...250
Mounting: SMD
Kind of package: reel; tape
Frequency: 180MHz
Application: automotive industry
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| BCP54-16-QX |
|
Hersteller: NEXPERIA
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 45V; 1A; 1.35W; SC73,SOT223
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 45V
Collector current: 1A
Power dissipation: 1.35W
Case: SC73; SOT223
Current gain: 100...250
Mounting: SMD
Kind of package: reel; tape
Frequency: 180MHz
Application: automotive industry
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 45V; 1A; 1.35W; SC73,SOT223
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 45V
Collector current: 1A
Power dissipation: 1.35W
Case: SC73; SOT223
Current gain: 100...250
Mounting: SMD
Kind of package: reel; tape
Frequency: 180MHz
Application: automotive industry
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| HEF4030BT,653 |
|
Hersteller: NEXPERIA
Category: Gates, inverters
Description: IC: digital; XOR; Ch: 4; IN: 2; CMOS; SMD; SO14; 3÷15VDC; -40÷125°C
Operating temperature: -40...125°C
Mounting: SMD
Supply voltage: 3...15V DC
Kind of gate: XOR
Type of integrated circuit: digital
Technology: CMOS
Quiescent current: 30µA
Number of inputs: 2
Kind of package: reel; tape
Case: SO14
Family: HEF4000B
Number of channels: quad; 4
Category: Gates, inverters
Description: IC: digital; XOR; Ch: 4; IN: 2; CMOS; SMD; SO14; 3÷15VDC; -40÷125°C
Operating temperature: -40...125°C
Mounting: SMD
Supply voltage: 3...15V DC
Kind of gate: XOR
Type of integrated circuit: digital
Technology: CMOS
Quiescent current: 30µA
Number of inputs: 2
Kind of package: reel; tape
Case: SO14
Family: HEF4000B
Number of channels: quad; 4
auf Bestellung 1378 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 105+ | 0.82 EUR |
| 131+ | 0.65 EUR |
| 175+ | 0.49 EUR |
| 74AHC132D,118 |
|
Hersteller: NEXPERIA
Category: Gates, inverters
Description: IC: digital; NAND; Ch: 4; IN: 2; CMOS; SMD; SO14; 2÷5.5VDC; -40÷125°C
Type of integrated circuit: digital
Mounting: SMD
Delay time: 19.5ns
Supply voltage: 2...5.5V DC
Kind of gate: NAND
Operating temperature: -40...125°C
Technology: CMOS
Quiescent current: 40µA
Kind of input: with Schmitt trigger
Number of inputs: 2
Kind of package: reel; tape
Case: SO14
Family: AHC
Number of channels: quad; 4
Category: Gates, inverters
Description: IC: digital; NAND; Ch: 4; IN: 2; CMOS; SMD; SO14; 2÷5.5VDC; -40÷125°C
Type of integrated circuit: digital
Mounting: SMD
Delay time: 19.5ns
Supply voltage: 2...5.5V DC
Kind of gate: NAND
Operating temperature: -40...125°C
Technology: CMOS
Quiescent current: 40µA
Kind of input: with Schmitt trigger
Number of inputs: 2
Kind of package: reel; tape
Case: SO14
Family: AHC
Number of channels: quad; 4
auf Bestellung 1545 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 250+ | 0.35 EUR |
| 298+ | 0.29 EUR |
| 338+ | 0.25 EUR |
| 394+ | 0.21 EUR |
| 443+ | 0.19 EUR |
| 74AHC132BQ,115 |
|
Hersteller: NEXPERIA
Category: Gates, inverters
Description: IC: digital; NAND; Ch: 4; IN: 2; CMOS; SMD; DHVQFN14; 2÷5.5VDC; 40uA
Type of integrated circuit: digital
Mounting: SMD
Delay time: 19.5ns
Supply voltage: 2...5.5V DC
Kind of gate: NAND
Operating temperature: -40...125°C
Technology: CMOS
Quiescent current: 40µA
Kind of input: with Schmitt trigger
Number of inputs: 2
Kind of package: reel; tape
Case: DHVQFN14
Family: AHC
Number of channels: quad; 4
Category: Gates, inverters
Description: IC: digital; NAND; Ch: 4; IN: 2; CMOS; SMD; DHVQFN14; 2÷5.5VDC; 40uA
Type of integrated circuit: digital
Mounting: SMD
Delay time: 19.5ns
Supply voltage: 2...5.5V DC
Kind of gate: NAND
Operating temperature: -40...125°C
Technology: CMOS
Quiescent current: 40µA
Kind of input: with Schmitt trigger
Number of inputs: 2
Kind of package: reel; tape
Case: DHVQFN14
Family: AHC
Number of channels: quad; 4
Produkt ist nicht verfügbar
Mindestbestellmenge: 3000 Stücke
Im Einkaufswagen
Stück im Wert von UAH
| 74AHC132PW,118 |
|
Hersteller: NEXPERIA
Category: Gates, inverters
Description: IC: digital; NAND; Ch: 4; IN: 2; CMOS; SMD; TSSOP14; 2÷5.5VDC; 40uA
Type of integrated circuit: digital
Mounting: SMD
Delay time: 19.5ns
Supply voltage: 2...5.5V DC
Kind of gate: NAND
Operating temperature: -40...125°C
Technology: CMOS
Quiescent current: 40µA
Kind of input: with Schmitt trigger
Number of inputs: 2
Kind of package: reel; tape
Case: TSSOP14
Family: AHC
Number of channels: quad; 4
Category: Gates, inverters
Description: IC: digital; NAND; Ch: 4; IN: 2; CMOS; SMD; TSSOP14; 2÷5.5VDC; 40uA
Type of integrated circuit: digital
Mounting: SMD
Delay time: 19.5ns
Supply voltage: 2...5.5V DC
Kind of gate: NAND
Operating temperature: -40...125°C
Technology: CMOS
Quiescent current: 40µA
Kind of input: with Schmitt trigger
Number of inputs: 2
Kind of package: reel; tape
Case: TSSOP14
Family: AHC
Number of channels: quad; 4
Produkt ist nicht verfügbar
Mindestbestellmenge: 2500 Stücke
Im Einkaufswagen
Stück im Wert von UAH
| PBSS4630PA,115 |
|
Hersteller: NEXPERIA
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 30V; 6A; DFN2020-3,SOT1061
Mounting: SMD
Collector current: 6A
Collector-emitter voltage: 30V
Current gain: 180...450
Frequency: 115MHz
Kind of package: reel; tape
Polarisation: bipolar
Case: DFN2020-3; SOT1061
Type of transistor: NPN
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 30V; 6A; DFN2020-3,SOT1061
Mounting: SMD
Collector current: 6A
Collector-emitter voltage: 30V
Current gain: 180...450
Frequency: 115MHz
Kind of package: reel; tape
Polarisation: bipolar
Case: DFN2020-3; SOT1061
Type of transistor: NPN
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| PMEG2010ER,115 |
|
Hersteller: NEXPERIA
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; CFP3,SOD123W; SMD; 20V; 1A; reel,tape
Type of diode: Schottky rectifying
Case: CFP3; SOD123W
Mounting: SMD
Max. off-state voltage: 20V
Load current: 1A
Semiconductor structure: single diode
Capacitance: 175pF
Max. forward voltage: 0.34V
Max. load current: 7A
Max. forward impulse current: 50A
Kind of package: reel; tape
Power dissipation: 1.8W
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; CFP3,SOD123W; SMD; 20V; 1A; reel,tape
Type of diode: Schottky rectifying
Case: CFP3; SOD123W
Mounting: SMD
Max. off-state voltage: 20V
Load current: 1A
Semiconductor structure: single diode
Capacitance: 175pF
Max. forward voltage: 0.34V
Max. load current: 7A
Max. forward impulse current: 50A
Kind of package: reel; tape
Power dissipation: 1.8W
auf Bestellung 1145 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 264+ | 0.32 EUR |
| 355+ | 0.24 EUR |
| 417+ | 0.2 EUR |
| 516+ | 0.17 EUR |
| 569+ | 0.15 EUR |
| 633+ | 0.13 EUR |
| 1000+ | 0.12 EUR |
| PMEG2010EH,115 |
|
Hersteller: NEXPERIA
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SOD123F; SMD; 20V; 1A; reel,tape
Type of diode: Schottky rectifying
Case: SOD123F
Mounting: SMD
Max. off-state voltage: 20V
Load current: 1A
Semiconductor structure: single diode
Max. forward voltage: 0.5V
Kind of package: reel; tape
Capacitance: 80pF
Max. forward impulse current: 9A
Max. load current: 7A
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SOD123F; SMD; 20V; 1A; reel,tape
Type of diode: Schottky rectifying
Case: SOD123F
Mounting: SMD
Max. off-state voltage: 20V
Load current: 1A
Semiconductor structure: single diode
Max. forward voltage: 0.5V
Kind of package: reel; tape
Capacitance: 80pF
Max. forward impulse current: 9A
Max. load current: 7A
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| PMEG2010EJ,115 |
|
Hersteller: NEXPERIA
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SC90,SOD323F; SMD; 20V; 1A; reel,tape
Type of diode: Schottky rectifying
Case: SC90; SOD323F
Mounting: SMD
Max. off-state voltage: 20V
Load current: 1A
Semiconductor structure: single diode
Capacitance: 80pF
Max. forward voltage: 0.5V
Kind of package: reel; tape
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SC90,SOD323F; SMD; 20V; 1A; reel,tape
Type of diode: Schottky rectifying
Case: SC90; SOD323F
Mounting: SMD
Max. off-state voltage: 20V
Load current: 1A
Semiconductor structure: single diode
Capacitance: 80pF
Max. forward voltage: 0.5V
Kind of package: reel; tape
auf Bestellung 78 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 78+ | 1.09 EUR |
| 74AHC08PW,118 |
|
Hersteller: NEXPERIA
Category: Gates, inverters
Description: IC: digital; AND; Ch: 4; IN: 2; CMOS; SMD; TSSOP14; 2÷5.5VDC; -40÷125°C
Type of integrated circuit: digital
Mounting: SMD
Delay time: 15.5ns
Supply voltage: 2...5.5V DC
Kind of gate: AND
Operating temperature: -40...125°C
Technology: CMOS
Quiescent current: 40µA
Number of inputs: 2
Kind of package: reel; tape
Case: TSSOP14
Family: AHC
Number of channels: quad; 4
Category: Gates, inverters
Description: IC: digital; AND; Ch: 4; IN: 2; CMOS; SMD; TSSOP14; 2÷5.5VDC; -40÷125°C
Type of integrated circuit: digital
Mounting: SMD
Delay time: 15.5ns
Supply voltage: 2...5.5V DC
Kind of gate: AND
Operating temperature: -40...125°C
Technology: CMOS
Quiescent current: 40µA
Number of inputs: 2
Kind of package: reel; tape
Case: TSSOP14
Family: AHC
Number of channels: quad; 4
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| 74AHC08BQ,115 |
|
Hersteller: NEXPERIA
Category: Gates, inverters
Description: IC: digital; AND; Ch: 4; IN: 2; CMOS; SMD; DHVQFN14; 2÷5.5VDC; 40uA
Type of integrated circuit: digital
Mounting: SMD
Delay time: 15.5ns
Supply voltage: 2...5.5V DC
Kind of gate: AND
Operating temperature: -40...125°C
Technology: CMOS
Quiescent current: 40µA
Number of inputs: 2
Kind of package: reel; tape
Case: DHVQFN14
Family: AHC
Number of channels: quad; 4
Category: Gates, inverters
Description: IC: digital; AND; Ch: 4; IN: 2; CMOS; SMD; DHVQFN14; 2÷5.5VDC; 40uA
Type of integrated circuit: digital
Mounting: SMD
Delay time: 15.5ns
Supply voltage: 2...5.5V DC
Kind of gate: AND
Operating temperature: -40...125°C
Technology: CMOS
Quiescent current: 40µA
Number of inputs: 2
Kind of package: reel; tape
Case: DHVQFN14
Family: AHC
Number of channels: quad; 4
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| 74AHC08D,118 |
|
Hersteller: NEXPERIA
Category: Gates, inverters
Description: IC: digital; AND; Ch: 4; IN: 2; CMOS; SMD; SO14; 2÷5.5VDC; -40÷125°C
Type of integrated circuit: digital
Mounting: SMD
Supply voltage: 2...5.5V DC
Kind of gate: AND
Operating temperature: -40...125°C
Technology: CMOS
Quiescent current: 40µA
Number of inputs: 2
Kind of package: reel; tape
Case: SO14
Family: AHC
Number of channels: quad; 4
Category: Gates, inverters
Description: IC: digital; AND; Ch: 4; IN: 2; CMOS; SMD; SO14; 2÷5.5VDC; -40÷125°C
Type of integrated circuit: digital
Mounting: SMD
Supply voltage: 2...5.5V DC
Kind of gate: AND
Operating temperature: -40...125°C
Technology: CMOS
Quiescent current: 40µA
Number of inputs: 2
Kind of package: reel; tape
Case: SO14
Family: AHC
Number of channels: quad; 4
Produkt ist nicht verfügbar
Mindestbestellmenge: 12500 Stücke
Im Einkaufswagen
Stück im Wert von UAH
| 74VHC08BQ,115 |
|
Hersteller: NEXPERIA
Category: Gates, inverters
Description: IC: digital; AND; Ch: 4; IN: 2; CMOS; SMD; DHVQFN14; 2÷5.5VDC; VHC
Type of integrated circuit: digital
Mounting: SMD
Supply voltage: 2...5.5V DC
Kind of gate: AND
Operating temperature: -40...125°C
Technology: CMOS
Number of inputs: 2
Kind of package: reel; tape
Case: DHVQFN14
Family: VHC
Number of channels: 4
Category: Gates, inverters
Description: IC: digital; AND; Ch: 4; IN: 2; CMOS; SMD; DHVQFN14; 2÷5.5VDC; VHC
Type of integrated circuit: digital
Mounting: SMD
Supply voltage: 2...5.5V DC
Kind of gate: AND
Operating temperature: -40...125°C
Technology: CMOS
Number of inputs: 2
Kind of package: reel; tape
Case: DHVQFN14
Family: VHC
Number of channels: 4
Produkt ist nicht verfügbar
Mindestbestellmenge: 6000 Stücke
Im Einkaufswagen
Stück im Wert von UAH
| 74VHC08D,118 |
|
Hersteller: NEXPERIA
Category: Gates, inverters
Description: IC: digital; AND; Ch: 4; IN: 2; CMOS; SMD; SO14; 2÷5.5VDC; -40÷125°C
Type of integrated circuit: digital
Kind of gate: AND
Technology: CMOS
Case: SO14
Number of channels: 4
Kind of package: reel; tape
Mounting: SMD
Operating temperature: -40...125°C
Number of inputs: 2
Supply voltage: 2...5.5V DC
Family: VHC
Category: Gates, inverters
Description: IC: digital; AND; Ch: 4; IN: 2; CMOS; SMD; SO14; 2÷5.5VDC; -40÷125°C
Type of integrated circuit: digital
Kind of gate: AND
Technology: CMOS
Case: SO14
Number of channels: 4
Kind of package: reel; tape
Mounting: SMD
Operating temperature: -40...125°C
Number of inputs: 2
Supply voltage: 2...5.5V DC
Family: VHC
Produkt ist nicht verfügbar
Mindestbestellmenge: 7500 Stücke
Im Einkaufswagen
Stück im Wert von UAH
| 74HC151PW,118 |
|
Hersteller: NEXPERIA
Category: Decoders, multiplexers, switches
Description: IC: digital; 8bit,multiplexer; Ch: 8; IN: 8; CMOS; SMD; TSSOP16; HC
Type of integrated circuit: digital
Kind of integrated circuit: 8bit; multiplexer
Number of channels: 8
Number of inputs: 8
Mounting: SMD
Case: TSSOP16
Family: HC
Operating temperature: -40...125°C
Supply voltage: 2...6V DC
Technology: CMOS
Kind of package: reel; tape
Category: Decoders, multiplexers, switches
Description: IC: digital; 8bit,multiplexer; Ch: 8; IN: 8; CMOS; SMD; TSSOP16; HC
Type of integrated circuit: digital
Kind of integrated circuit: 8bit; multiplexer
Number of channels: 8
Number of inputs: 8
Mounting: SMD
Case: TSSOP16
Family: HC
Operating temperature: -40...125°C
Supply voltage: 2...6V DC
Technology: CMOS
Kind of package: reel; tape
auf Bestellung 1888 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 179+ | 0.48 EUR |
| 258+ | 0.33 EUR |
| 291+ | 0.3 EUR |
| 336+ | 0.25 EUR |
| 360+ | 0.24 EUR |
| 74HC05D,118 |
|
Hersteller: NEXPERIA
Category: Gates, inverters
Description: IC: digital; NOT; Ch: 6; CMOS; SMD; SO14; 2÷6VDC; -40÷125°C; reel,tape
Type of integrated circuit: digital
Kind of gate: NOT
Number of channels: hex; 6
Mounting: SMD
Case: SO14
Supply voltage: 2...6V DC
Operating temperature: -40...125°C
Kind of package: reel; tape
Quiescent current: 40µA
Family: HC
Delay time: 135ns
Kind of output: open drain
Technology: CMOS
Category: Gates, inverters
Description: IC: digital; NOT; Ch: 6; CMOS; SMD; SO14; 2÷6VDC; -40÷125°C; reel,tape
Type of integrated circuit: digital
Kind of gate: NOT
Number of channels: hex; 6
Mounting: SMD
Case: SO14
Supply voltage: 2...6V DC
Operating temperature: -40...125°C
Kind of package: reel; tape
Quiescent current: 40µA
Family: HC
Delay time: 135ns
Kind of output: open drain
Technology: CMOS
Produkt ist nicht verfügbar
Mindestbestellmenge: 2500 Stücke
Im Einkaufswagen
Stück im Wert von UAH
| PSMN057-200P,127 |
|
Hersteller: NEXPERIA
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 200V; 39A; Idm: 156A; 250W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 200V
Drain current: 39A
Pulsed drain current: 156A
Power dissipation: 250W
Case: SOT78; TO220AB
Gate-source voltage: ±20V
On-state resistance: 41mΩ
Mounting: THT
Gate charge: 96nC
Kind of package: tube
Kind of channel: enhancement
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 200V; 39A; Idm: 156A; 250W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 200V
Drain current: 39A
Pulsed drain current: 156A
Power dissipation: 250W
Case: SOT78; TO220AB
Gate-source voltage: ±20V
On-state resistance: 41mΩ
Mounting: THT
Gate charge: 96nC
Kind of package: tube
Kind of channel: enhancement
auf Bestellung 548 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 22+ | 3.96 EUR |
| 24+ | 3.56 EUR |
| 25+ | 3.45 EUR |
| MJD44H11J |
|
Hersteller: NEXPERIA
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 80V; 8A; 20W; DPAK,TO252
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 80V
Collector current: 8A
Power dissipation: 20W
Case: DPAK; TO252
Current gain: 40...60
Mounting: SMD
Kind of package: reel; tape
Frequency: 160MHz
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 80V; 8A; 20W; DPAK,TO252
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 80V
Collector current: 8A
Power dissipation: 20W
Case: DPAK; TO252
Current gain: 40...60
Mounting: SMD
Kind of package: reel; tape
Frequency: 160MHz
Produkt ist nicht verfügbar
Mindestbestellmenge: 2500 Stücke
Im Einkaufswagen
Stück im Wert von UAH
| BUK7Y8R7-60EX |
|
Hersteller: NEXPERIA
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 61A; Idm: 347A; 147W
On-state resistance: 19.5mΩ
Mounting: SMD
Pulsed drain current: 347A
Power dissipation: 147W
Gate charge: 46nC
Polarisation: unipolar
Drain current: 61A
Kind of channel: enhancement
Drain-source voltage: 60V
Application: automotive industry
Type of transistor: N-MOSFET
Kind of package: reel; tape
Case: LFPAK56; PowerSO8; SOT669
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 61A; Idm: 347A; 147W
On-state resistance: 19.5mΩ
Mounting: SMD
Pulsed drain current: 347A
Power dissipation: 147W
Gate charge: 46nC
Polarisation: unipolar
Drain current: 61A
Kind of channel: enhancement
Drain-source voltage: 60V
Application: automotive industry
Type of transistor: N-MOSFET
Kind of package: reel; tape
Case: LFPAK56; PowerSO8; SOT669
auf Bestellung 34 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 27+ | 3.17 EUR |
| 34+ | 2.5 EUR |
| BUK7Y7R0-40HX |
|
Hersteller: NEXPERIA
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 48A; Idm: 272A; 64W
On-state resistance: 13.6mΩ
Mounting: SMD
Pulsed drain current: 272A
Power dissipation: 64W
Gate charge: 26nC
Polarisation: unipolar
Drain current: 48A
Kind of channel: enhancement
Drain-source voltage: 40V
Application: automotive industry
Type of transistor: N-MOSFET
Gate-source voltage: ±20V
Kind of package: reel; tape
Case: LFPAK56; PowerSO8; SOT669
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 48A; Idm: 272A; 64W
On-state resistance: 13.6mΩ
Mounting: SMD
Pulsed drain current: 272A
Power dissipation: 64W
Gate charge: 26nC
Polarisation: unipolar
Drain current: 48A
Kind of channel: enhancement
Drain-source voltage: 40V
Application: automotive industry
Type of transistor: N-MOSFET
Gate-source voltage: ±20V
Kind of package: reel; tape
Case: LFPAK56; PowerSO8; SOT669
auf Bestellung 1362 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 63+ | 1.36 EUR |
| 79+ | 1.09 EUR |
| 88+ | 0.98 EUR |
| 105+ | 0.82 EUR |
| 250+ | 0.73 EUR |
| 500+ | 0.68 EUR |
| 1000+ | 0.64 EUR |
| BUK7M6R3-40EX |
|
Hersteller: NEXPERIA
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 56.4A; Idm: 319A; 79W
On-state resistance: 12.5mΩ
Mounting: SMD
Pulsed drain current: 319A
Power dissipation: 79W
Gate charge: 28.1nC
Polarisation: unipolar
Drain current: 56.4A
Kind of channel: enhancement
Drain-source voltage: 40V
Application: automotive industry
Type of transistor: N-MOSFET
Kind of package: reel; tape
Case: LFPAK33; SOT1210
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 56.4A; Idm: 319A; 79W
On-state resistance: 12.5mΩ
Mounting: SMD
Pulsed drain current: 319A
Power dissipation: 79W
Gate charge: 28.1nC
Polarisation: unipolar
Drain current: 56.4A
Kind of channel: enhancement
Drain-source voltage: 40V
Application: automotive industry
Type of transistor: N-MOSFET
Kind of package: reel; tape
Case: LFPAK33; SOT1210
auf Bestellung 1489 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 55+ | 1.55 EUR |
| 73+ | 1.18 EUR |
| 81+ | 1.06 EUR |
| 100+ | 0.98 EUR |
| 250+ | 0.94 EUR |
| 500+ | 0.83 EUR |
| 1000+ | 0.82 EUR |
| BUK7M33-60EX |
|
Hersteller: NEXPERIA
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 17A; Idm: 98A; 44W
On-state resistance: 74mΩ
Mounting: SMD
Pulsed drain current: 98A
Power dissipation: 44W
Gate charge: 10.9nC
Polarisation: unipolar
Drain current: 17A
Kind of channel: enhancement
Drain-source voltage: 60V
Application: automotive industry
Type of transistor: N-MOSFET
Kind of package: reel; tape
Case: LFPAK33; SOT1210
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 17A; Idm: 98A; 44W
On-state resistance: 74mΩ
Mounting: SMD
Pulsed drain current: 98A
Power dissipation: 44W
Gate charge: 10.9nC
Polarisation: unipolar
Drain current: 17A
Kind of channel: enhancement
Drain-source voltage: 60V
Application: automotive industry
Type of transistor: N-MOSFET
Kind of package: reel; tape
Case: LFPAK33; SOT1210
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| BUK78150-55A/CUX |
|
Hersteller: NEXPERIA
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 55V; 3.8A; Idm: 22A; 8W; SC73,SOT223
On-state resistance: 278mΩ
Mounting: SMD
Pulsed drain current: 22A
Power dissipation: 8W
Polarisation: unipolar
Drain current: 3.8A
Kind of channel: enhancement
Drain-source voltage: 55V
Application: automotive industry
Type of transistor: N-MOSFET
Kind of package: reel; tape
Case: SC73; SOT223
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 55V; 3.8A; Idm: 22A; 8W; SC73,SOT223
On-state resistance: 278mΩ
Mounting: SMD
Pulsed drain current: 22A
Power dissipation: 8W
Polarisation: unipolar
Drain current: 3.8A
Kind of channel: enhancement
Drain-source voltage: 55V
Application: automotive industry
Type of transistor: N-MOSFET
Kind of package: reel; tape
Case: SC73; SOT223
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| BUK763R8-80E,118 |
|
Hersteller: NEXPERIA
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 80V; 120A; Idm: 778A; 349W
On-state resistance: 9.2mΩ
Mounting: SMD
Pulsed drain current: 778A
Power dissipation: 349W
Gate charge: 169nC
Polarisation: unipolar
Drain current: 120A
Kind of channel: enhancement
Drain-source voltage: 80V
Application: automotive industry
Type of transistor: N-MOSFET
Gate-source voltage: ±20V
Kind of package: reel; tape
Case: D2PAK; SOT404
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 80V; 120A; Idm: 778A; 349W
On-state resistance: 9.2mΩ
Mounting: SMD
Pulsed drain current: 778A
Power dissipation: 349W
Gate charge: 169nC
Polarisation: unipolar
Drain current: 120A
Kind of channel: enhancement
Drain-source voltage: 80V
Application: automotive industry
Type of transistor: N-MOSFET
Gate-source voltage: ±20V
Kind of package: reel; tape
Case: D2PAK; SOT404
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| BUK7K6R2-40EX |
|
Hersteller: NEXPERIA
Category: Multi channel transistors
Description: Transistor: N-MOSFET x2; unipolar; 40V; 40A; Idm: 308A; 68W
On-state resistance: 5.8mΩ
Mounting: SMD
Pulsed drain current: 308A
Power dissipation: 68W
Gate charge: 32.3nC
Polarisation: unipolar
Drain current: 40A
Kind of channel: enhancement
Drain-source voltage: 40V
Application: automotive industry
Type of transistor: N-MOSFET x2
Gate-source voltage: ±20V
Kind of package: reel; tape
Case: LFPAK56D; SOT1205
Category: Multi channel transistors
Description: Transistor: N-MOSFET x2; unipolar; 40V; 40A; Idm: 308A; 68W
On-state resistance: 5.8mΩ
Mounting: SMD
Pulsed drain current: 308A
Power dissipation: 68W
Gate charge: 32.3nC
Polarisation: unipolar
Drain current: 40A
Kind of channel: enhancement
Drain-source voltage: 40V
Application: automotive industry
Type of transistor: N-MOSFET x2
Gate-source voltage: ±20V
Kind of package: reel; tape
Case: LFPAK56D; SOT1205
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| BUK7K8R7-40EX |
|
Hersteller: NEXPERIA
Category: Multi channel transistors
Description: Transistor: N-MOSFET x2; unipolar; 40V; 30A; Idm: 22.5A; 53W
On-state resistance: 8.5mΩ
Mounting: SMD
Pulsed drain current: 22.5A
Power dissipation: 53W
Gate charge: 21.8nC
Polarisation: unipolar
Drain current: 30A
Kind of channel: enhancement
Drain-source voltage: 40V
Application: automotive industry
Type of transistor: N-MOSFET x2
Gate-source voltage: ±20V
Kind of package: reel; tape
Case: LFPAK56D; SOT1205
Category: Multi channel transistors
Description: Transistor: N-MOSFET x2; unipolar; 40V; 30A; Idm: 22.5A; 53W
On-state resistance: 8.5mΩ
Mounting: SMD
Pulsed drain current: 22.5A
Power dissipation: 53W
Gate charge: 21.8nC
Polarisation: unipolar
Drain current: 30A
Kind of channel: enhancement
Drain-source voltage: 40V
Application: automotive industry
Type of transistor: N-MOSFET x2
Gate-source voltage: ±20V
Kind of package: reel; tape
Case: LFPAK56D; SOT1205
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| BUK7K52-60EX |
|
Hersteller: NEXPERIA
Category: Multi channel transistors
Description: Transistor: N-MOSFET x2; unipolar; 60V; 12.6A; Idm: 71A; 32W
On-state resistance: 101mΩ
Mounting: SMD
Pulsed drain current: 71A
Power dissipation: 32W
Gate charge: 9.2nC
Polarisation: unipolar
Drain current: 12.6A
Kind of channel: enhancement
Drain-source voltage: 60V
Application: automotive industry
Type of transistor: N-MOSFET x2
Gate-source voltage: ±20V
Kind of package: reel; tape
Case: LFPAK33; SOT1210
Category: Multi channel transistors
Description: Transistor: N-MOSFET x2; unipolar; 60V; 12.6A; Idm: 71A; 32W
On-state resistance: 101mΩ
Mounting: SMD
Pulsed drain current: 71A
Power dissipation: 32W
Gate charge: 9.2nC
Polarisation: unipolar
Drain current: 12.6A
Kind of channel: enhancement
Drain-source voltage: 60V
Application: automotive industry
Type of transistor: N-MOSFET x2
Gate-source voltage: ±20V
Kind of package: reel; tape
Case: LFPAK33; SOT1210
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| BUK7880-55A/CUX |
|
Hersteller: NEXPERIA
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 55V; 5A; Idm: 30A; 8W; SC73,SOT223
On-state resistance: 148mΩ
Mounting: SMD
Pulsed drain current: 30A
Power dissipation: 8W
Gate charge: 12nC
Polarisation: unipolar
Drain current: 5A
Kind of channel: enhancement
Drain-source voltage: 55V
Application: automotive industry
Type of transistor: N-MOSFET
Gate-source voltage: ±20V
Kind of package: reel; tape
Case: SC73; SOT223
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 55V; 5A; Idm: 30A; 8W; SC73,SOT223
On-state resistance: 148mΩ
Mounting: SMD
Pulsed drain current: 30A
Power dissipation: 8W
Gate charge: 12nC
Polarisation: unipolar
Drain current: 5A
Kind of channel: enhancement
Drain-source voltage: 55V
Application: automotive industry
Type of transistor: N-MOSFET
Gate-source voltage: ±20V
Kind of package: reel; tape
Case: SC73; SOT223
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| BUK7D36-60EX |
|
Hersteller: NEXPERIA
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 8.9A; Idm: 56A; 15W
On-state resistance: 76mΩ
Mounting: SMD
Pulsed drain current: 56A
Power dissipation: 15W
Gate charge: 14nC
Polarisation: unipolar
Drain current: 8.9A
Kind of channel: enhancement
Drain-source voltage: 60V
Application: automotive industry
Type of transistor: N-MOSFET
Gate-source voltage: ±20V
Kind of package: reel; tape
Case: DFN6; SOT1220
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 8.9A; Idm: 56A; 15W
On-state resistance: 76mΩ
Mounting: SMD
Pulsed drain current: 56A
Power dissipation: 15W
Gate charge: 14nC
Polarisation: unipolar
Drain current: 8.9A
Kind of channel: enhancement
Drain-source voltage: 60V
Application: automotive industry
Type of transistor: N-MOSFET
Gate-source voltage: ±20V
Kind of package: reel; tape
Case: DFN6; SOT1220
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| BUK7613-60E,118 |
|
Hersteller: NEXPERIA
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 41A; Idm: 234A; 96W
On-state resistance: 28.2mΩ
Mounting: SMD
Pulsed drain current: 234A
Power dissipation: 96W
Gate charge: 22.9nC
Polarisation: unipolar
Drain current: 41A
Kind of channel: enhancement
Drain-source voltage: 60V
Application: automotive industry
Type of transistor: N-MOSFET
Gate-source voltage: ±20V
Kind of package: reel; tape
Case: D2PAK; SOT404
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 41A; Idm: 234A; 96W
On-state resistance: 28.2mΩ
Mounting: SMD
Pulsed drain current: 234A
Power dissipation: 96W
Gate charge: 22.9nC
Polarisation: unipolar
Drain current: 41A
Kind of channel: enhancement
Drain-source voltage: 60V
Application: automotive industry
Type of transistor: N-MOSFET
Gate-source voltage: ±20V
Kind of package: reel; tape
Case: D2PAK; SOT404
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| BUK7D25-40EX |
|
Hersteller: NEXPERIA
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; Trench; unipolar; 40V; 12A; Idm: 76A; 15W
Mounting: SMD
Gate charge: 13nC
Polarisation: unipolar
Technology: Trench
Drain current: 12A
Kind of channel: enhancement
Drain-source voltage: 40V
Application: automotive industry
Type of transistor: N-MOSFET
Kind of package: reel; tape
Case: DFN2020MD-6; SOT1220
On-state resistance: 46mΩ
Pulsed drain current: 76A
Power dissipation: 15W
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; Trench; unipolar; 40V; 12A; Idm: 76A; 15W
Mounting: SMD
Gate charge: 13nC
Polarisation: unipolar
Technology: Trench
Drain current: 12A
Kind of channel: enhancement
Drain-source voltage: 40V
Application: automotive industry
Type of transistor: N-MOSFET
Kind of package: reel; tape
Case: DFN2020MD-6; SOT1220
On-state resistance: 46mΩ
Pulsed drain current: 76A
Power dissipation: 15W
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| BUK7M27-80EX |
|
Hersteller: NEXPERIA
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 80V; 21.3A; Idm: 121A; 62W
On-state resistance: 68mΩ
Mounting: SMD
Pulsed drain current: 121A
Power dissipation: 62W
Gate charge: 19.5nC
Polarisation: unipolar
Drain current: 21.3A
Kind of channel: enhancement
Drain-source voltage: 80V
Application: automotive industry
Type of transistor: N-MOSFET
Gate-source voltage: ±20V
Kind of package: reel; tape
Case: LFPAK33; SOT1210
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 80V; 21.3A; Idm: 121A; 62W
On-state resistance: 68mΩ
Mounting: SMD
Pulsed drain current: 121A
Power dissipation: 62W
Gate charge: 19.5nC
Polarisation: unipolar
Drain current: 21.3A
Kind of channel: enhancement
Drain-source voltage: 80V
Application: automotive industry
Type of transistor: N-MOSFET
Gate-source voltage: ±20V
Kind of package: reel; tape
Case: LFPAK33; SOT1210
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| BUK7Y3R5-40E,115 |
|
Hersteller: NEXPERIA
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 100A; Idm: 622A; 167W
On-state resistance: 3.5mΩ
Mounting: SMD
Pulsed drain current: 622A
Power dissipation: 167W
Gate charge: 49.4nC
Polarisation: unipolar
Drain current: 100A
Kind of channel: enhancement
Drain-source voltage: 40V
Application: automotive industry
Type of transistor: N-MOSFET
Gate-source voltage: ±20V
Kind of package: reel; tape
Case: LFPAK56; PowerSO8; SOT669
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 100A; Idm: 622A; 167W
On-state resistance: 3.5mΩ
Mounting: SMD
Pulsed drain current: 622A
Power dissipation: 167W
Gate charge: 49.4nC
Polarisation: unipolar
Drain current: 100A
Kind of channel: enhancement
Drain-source voltage: 40V
Application: automotive industry
Type of transistor: N-MOSFET
Gate-source voltage: ±20V
Kind of package: reel; tape
Case: LFPAK56; PowerSO8; SOT669
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| BUK7Y9R9-80EX |
|
Hersteller: NEXPERIA
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 80V; 63A; Idm: 354A; 195W
On-state resistance: 24.9mΩ
Mounting: SMD
Pulsed drain current: 354A
Power dissipation: 195W
Gate charge: 51.6nC
Polarisation: unipolar
Drain current: 63A
Kind of channel: enhancement
Drain-source voltage: 80V
Application: automotive industry
Type of transistor: N-MOSFET
Gate-source voltage: ±20V
Kind of package: reel; tape
Case: LFPAK56; PowerSO8; SOT669
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 80V; 63A; Idm: 354A; 195W
On-state resistance: 24.9mΩ
Mounting: SMD
Pulsed drain current: 354A
Power dissipation: 195W
Gate charge: 51.6nC
Polarisation: unipolar
Drain current: 63A
Kind of channel: enhancement
Drain-source voltage: 80V
Application: automotive industry
Type of transistor: N-MOSFET
Gate-source voltage: ±20V
Kind of package: reel; tape
Case: LFPAK56; PowerSO8; SOT669
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| BUK7Y153-100EX |
|
Hersteller: NEXPERIA
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 6.7A; Idm: 37.5A; 37.3W
On-state resistance: 424mΩ
Mounting: SMD
Pulsed drain current: 37.5A
Power dissipation: 37.3W
Gate charge: 9.4nC
Polarisation: unipolar
Drain current: 6.7A
Kind of channel: enhancement
Drain-source voltage: 100V
Application: automotive industry
Type of transistor: N-MOSFET
Gate-source voltage: ±20V
Kind of package: reel; tape
Case: LFPAK56; PowerSO8; SOT669
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 6.7A; Idm: 37.5A; 37.3W
On-state resistance: 424mΩ
Mounting: SMD
Pulsed drain current: 37.5A
Power dissipation: 37.3W
Gate charge: 9.4nC
Polarisation: unipolar
Drain current: 6.7A
Kind of channel: enhancement
Drain-source voltage: 100V
Application: automotive industry
Type of transistor: N-MOSFET
Gate-source voltage: ±20V
Kind of package: reel; tape
Case: LFPAK56; PowerSO8; SOT669
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| BZV55-B3V6,115 |
|
Hersteller: NEXPERIA
Category: SMD Zener diodes
Description: Diode: Zener; 0.4/0.5W; 3.6V; SMD; SOD80C; reel,tape; Ifmax: 250mA
Type of diode: Zener
Power dissipation: 0.4/0.5W
Zener voltage: 3.6V
Mounting: SMD
Tolerance: ±2%
Max. forward voltage: 0.9V
Case: SOD80C
Kind of package: reel; tape
Max. load current: 0.25A
Semiconductor structure: single diode
Category: SMD Zener diodes
Description: Diode: Zener; 0.4/0.5W; 3.6V; SMD; SOD80C; reel,tape; Ifmax: 250mA
Type of diode: Zener
Power dissipation: 0.4/0.5W
Zener voltage: 3.6V
Mounting: SMD
Tolerance: ±2%
Max. forward voltage: 0.9V
Case: SOD80C
Kind of package: reel; tape
Max. load current: 0.25A
Semiconductor structure: single diode
auf Bestellung 375 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 375+ | 0.23 EUR |
| BZV55-C8V2,115 |
|
Hersteller: NEXPERIA
Category: SMD Zener diodes
Description: Diode: Zener; 0.4/0.5W; 8.2V; SMD; SOD80C; Ifmax: 250mA; reel,tape
Type of diode: Zener
Power dissipation: 0.4/0.5W
Zener voltage: 8.2V
Mounting: SMD
Tolerance: ±5%
Max. forward voltage: 0.9V
Case: SOD80C
Max. load current: 0.25A
Semiconductor structure: single diode
Kind of package: reel; tape
Category: SMD Zener diodes
Description: Diode: Zener; 0.4/0.5W; 8.2V; SMD; SOD80C; Ifmax: 250mA; reel,tape
Type of diode: Zener
Power dissipation: 0.4/0.5W
Zener voltage: 8.2V
Mounting: SMD
Tolerance: ±5%
Max. forward voltage: 0.9V
Case: SOD80C
Max. load current: 0.25A
Semiconductor structure: single diode
Kind of package: reel; tape
auf Bestellung 5775 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 715+ | 0.12 EUR |
| 1042+ | 0.082 EUR |
| 1544+ | 0.055 EUR |
| 1931+ | 0.044 EUR |
| 2146+ | 0.039 EUR |
| 2500+ | 0.037 EUR |
| BZV55-C8V2,135 |
|
Hersteller: NEXPERIA
Category: SMD Zener diodes
Description: Diode: Zener; 0.4/0.5W; 8.2V; SMD; SOD80C; reel,tape; Ifmax: 250mA
Type of diode: Zener
Power dissipation: 0.4/0.5W
Zener voltage: 8.2V
Mounting: SMD
Tolerance: ±5%
Max. forward voltage: 0.9V
Case: SOD80C
Kind of package: reel; tape
Max. load current: 0.25A
Semiconductor structure: single diode
Category: SMD Zener diodes
Description: Diode: Zener; 0.4/0.5W; 8.2V; SMD; SOD80C; reel,tape; Ifmax: 250mA
Type of diode: Zener
Power dissipation: 0.4/0.5W
Zener voltage: 8.2V
Mounting: SMD
Tolerance: ±5%
Max. forward voltage: 0.9V
Case: SOD80C
Kind of package: reel; tape
Max. load current: 0.25A
Semiconductor structure: single diode
Produkt ist nicht verfügbar
Mindestbestellmenge: 25 Stücke
Im Einkaufswagen
Stück im Wert von UAH
| 74LVC00AD,118 |
|
Hersteller: NEXPERIA
Category: Gates, inverters
Description: IC: digital; NAND; Ch: 4; IN: 2; CMOS,TTL; SMD; SO14; -40÷125°C; 40uA
Type of integrated circuit: digital
Mounting: SMD
Delay time: 12ns
Supply voltage: 1.2V DC; 1.65...3.6V DC
Kind of gate: NAND
Operating temperature: -40...125°C
Technology: CMOS; TTL
Quiescent current: 40µA
Number of inputs: 2
Kind of package: reel; tape
Case: SO14
Family: LVC
Number of channels: quad; 4
Category: Gates, inverters
Description: IC: digital; NAND; Ch: 4; IN: 2; CMOS,TTL; SMD; SO14; -40÷125°C; 40uA
Type of integrated circuit: digital
Mounting: SMD
Delay time: 12ns
Supply voltage: 1.2V DC; 1.65...3.6V DC
Kind of gate: NAND
Operating temperature: -40...125°C
Technology: CMOS; TTL
Quiescent current: 40µA
Number of inputs: 2
Kind of package: reel; tape
Case: SO14
Family: LVC
Number of channels: quad; 4
auf Bestellung 2864 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 218+ | 0.39 EUR |
| 309+ | 0.27 EUR |
| 355+ | 0.24 EUR |
| 74LVC00APW,118 |
|
Hersteller: NEXPERIA
Category: Gates, inverters
Description: IC: digital; NAND; Ch: 4; IN: 2; CMOS,TTL; SMD; TSSOP14; 1.65÷5.5VDC
Type of integrated circuit: digital
Mounting: SMD
Supply voltage: 1.65...5.5V DC
Kind of gate: NAND
Operating temperature: -40...125°C
Technology: CMOS; TTL
Quiescent current: 40µA
Number of inputs: 2
Kind of package: reel; tape
Case: TSSOP14
Family: LVC
Number of channels: quad; 4
Category: Gates, inverters
Description: IC: digital; NAND; Ch: 4; IN: 2; CMOS,TTL; SMD; TSSOP14; 1.65÷5.5VDC
Type of integrated circuit: digital
Mounting: SMD
Supply voltage: 1.65...5.5V DC
Kind of gate: NAND
Operating temperature: -40...125°C
Technology: CMOS; TTL
Quiescent current: 40µA
Number of inputs: 2
Kind of package: reel; tape
Case: TSSOP14
Family: LVC
Number of channels: quad; 4
auf Bestellung 1531 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 278+ | 0.31 EUR |
| 329+ | 0.26 EUR |
| 371+ | 0.23 EUR |
| 74LVC00ADB,112 |
|
Hersteller: NEXPERIA
Category: Gates, inverters
Description: IC: digital; NAND; Ch: 4; IN: 2; CMOS,TTL; SMD; SSOP14; 1.2÷3.6VDC
Type of integrated circuit: digital
Mounting: SMD
Supply voltage: 1.2...3.6V DC
Kind of gate: NAND
Operating temperature: -40...125°C
Technology: CMOS; TTL
Number of inputs: 2
Kind of package: tube
Case: SSOP14
Family: LVC
Number of channels: quad; 4
Category: Gates, inverters
Description: IC: digital; NAND; Ch: 4; IN: 2; CMOS,TTL; SMD; SSOP14; 1.2÷3.6VDC
Type of integrated circuit: digital
Mounting: SMD
Supply voltage: 1.2...3.6V DC
Kind of gate: NAND
Operating temperature: -40...125°C
Technology: CMOS; TTL
Number of inputs: 2
Kind of package: tube
Case: SSOP14
Family: LVC
Number of channels: quad; 4
auf Bestellung 26 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 26+ | 3.27 EUR |
| 74LVC00ABQ,115 |
|
Hersteller: NEXPERIA
Category: Gates, inverters
Description: IC: digital; NAND; Ch: 4; IN: 2; CMOS,TTL; SMD; DHVQFN14; -40÷125°C
Type of integrated circuit: digital
Mounting: SMD
Delay time: 12ns
Supply voltage: 1.2V DC; 1.65...3.6V DC
Kind of gate: NAND
Operating temperature: -40...125°C
Technology: CMOS; TTL
Quiescent current: 40µA
Number of inputs: 2
Kind of package: reel; tape
Case: DHVQFN14
Family: LVC
Number of channels: quad; 4
Category: Gates, inverters
Description: IC: digital; NAND; Ch: 4; IN: 2; CMOS,TTL; SMD; DHVQFN14; -40÷125°C
Type of integrated circuit: digital
Mounting: SMD
Delay time: 12ns
Supply voltage: 1.2V DC; 1.65...3.6V DC
Kind of gate: NAND
Operating temperature: -40...125°C
Technology: CMOS; TTL
Quiescent current: 40µA
Number of inputs: 2
Kind of package: reel; tape
Case: DHVQFN14
Family: LVC
Number of channels: quad; 4
auf Bestellung 3000 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 295+ | 0.29 EUR |
| 410+ | 0.2 EUR |
| 455+ | 0.19 EUR |
| 500+ | 0.18 EUR |
| 1000+ | 0.17 EUR |
| 3000+ | 0.15 EUR |
| GAN080-650EBEZ |
|
Hersteller: NEXPERIA
Category: SMD N channel transistors
Description: Transistor: N-JFET; GaN; unipolar; HEMT; 650V; 29A; Idm: 58A; 240W
Type of transistor: N-JFET
Technology: GaN
Polarisation: unipolar
Kind of transistor: HEMT
Drain-source voltage: 650V
Drain current: 29A
Pulsed drain current: 58A
Case: DFN8080-8
Gate-source voltage: -6...7V
On-state resistance: 80mΩ
Mounting: SMD
Gate charge: 6.2nC
Kind of package: tape
Kind of channel: enhancement
Features of semiconductor devices: Kelvin terminal
Power dissipation: 240W
Category: SMD N channel transistors
Description: Transistor: N-JFET; GaN; unipolar; HEMT; 650V; 29A; Idm: 58A; 240W
Type of transistor: N-JFET
Technology: GaN
Polarisation: unipolar
Kind of transistor: HEMT
Drain-source voltage: 650V
Drain current: 29A
Pulsed drain current: 58A
Case: DFN8080-8
Gate-source voltage: -6...7V
On-state resistance: 80mΩ
Mounting: SMD
Gate charge: 6.2nC
Kind of package: tape
Kind of channel: enhancement
Features of semiconductor devices: Kelvin terminal
Power dissipation: 240W
Produkt ist nicht verfügbar
Mindestbestellmenge: 2500 Stücke
Im Einkaufswagen
Stück im Wert von UAH
| GAN140-650EBEZ |
|
Hersteller: NEXPERIA
Category: SMD N channel transistors
Description: Transistor: N-JFET; GaN; unipolar; HEMT; 650V; 17A; Idm: 32A; 113W
Type of transistor: N-JFET
Technology: GaN
Polarisation: unipolar
Kind of transistor: HEMT
Drain-source voltage: 650V
Drain current: 17A
Pulsed drain current: 32A
Case: DFN8080-8
Gate-source voltage: -1.4...7V
On-state resistance: 0.14Ω
Mounting: SMD
Gate charge: 3.5nC
Kind of package: tape
Kind of channel: enhancement
Features of semiconductor devices: Kelvin terminal
Power dissipation: 113W
Category: SMD N channel transistors
Description: Transistor: N-JFET; GaN; unipolar; HEMT; 650V; 17A; Idm: 32A; 113W
Type of transistor: N-JFET
Technology: GaN
Polarisation: unipolar
Kind of transistor: HEMT
Drain-source voltage: 650V
Drain current: 17A
Pulsed drain current: 32A
Case: DFN8080-8
Gate-source voltage: -1.4...7V
On-state resistance: 0.14Ω
Mounting: SMD
Gate charge: 3.5nC
Kind of package: tape
Kind of channel: enhancement
Features of semiconductor devices: Kelvin terminal
Power dissipation: 113W
Produkt ist nicht verfügbar
Mindestbestellmenge: 2500 Stücke
Im Einkaufswagen
Stück im Wert von UAH
| GAN140-650FBEZ |
|
Hersteller: NEXPERIA
Category: SMD N channel transistors
Description: Transistor: N-JFET; GaN; unipolar; HEMT; 650V; 17A; Idm: 32A; 113W
Type of transistor: N-JFET
Technology: GaN
Polarisation: unipolar
Kind of transistor: HEMT
Drain-source voltage: 650V
Drain current: 17A
Pulsed drain current: 32A
Case: DFN5060-5
Gate-source voltage: -1.4...7V
On-state resistance: 0.14Ω
Mounting: SMD
Gate charge: 3.5nC
Kind of package: tape
Kind of channel: enhancement
Features of semiconductor devices: Kelvin terminal
Power dissipation: 113W
Category: SMD N channel transistors
Description: Transistor: N-JFET; GaN; unipolar; HEMT; 650V; 17A; Idm: 32A; 113W
Type of transistor: N-JFET
Technology: GaN
Polarisation: unipolar
Kind of transistor: HEMT
Drain-source voltage: 650V
Drain current: 17A
Pulsed drain current: 32A
Case: DFN5060-5
Gate-source voltage: -1.4...7V
On-state resistance: 0.14Ω
Mounting: SMD
Gate charge: 3.5nC
Kind of package: tape
Kind of channel: enhancement
Features of semiconductor devices: Kelvin terminal
Power dissipation: 113W
Produkt ist nicht verfügbar
Mindestbestellmenge: 2500 Stücke
Im Einkaufswagen
Stück im Wert von UAH
| GAN190-650EBEZ |
|
Hersteller: NEXPERIA
Category: SMD N channel transistors
Description: Transistor: N-JFET; GaN; unipolar; HEMT; 650V; 11.5A; Idm: 20.5A
Type of transistor: N-JFET
Technology: GaN
Polarisation: unipolar
Kind of transistor: HEMT
Drain-source voltage: 650V
Drain current: 11.5A
Pulsed drain current: 20.5A
Case: DFN8080-8
Gate-source voltage: -1.4...7V
On-state resistance: 0.19Ω
Mounting: SMD
Gate charge: 2.8nC
Kind of package: tape
Kind of channel: enhancement
Features of semiconductor devices: Kelvin terminal
Power dissipation: 125W
Category: SMD N channel transistors
Description: Transistor: N-JFET; GaN; unipolar; HEMT; 650V; 11.5A; Idm: 20.5A
Type of transistor: N-JFET
Technology: GaN
Polarisation: unipolar
Kind of transistor: HEMT
Drain-source voltage: 650V
Drain current: 11.5A
Pulsed drain current: 20.5A
Case: DFN8080-8
Gate-source voltage: -1.4...7V
On-state resistance: 0.19Ω
Mounting: SMD
Gate charge: 2.8nC
Kind of package: tape
Kind of channel: enhancement
Features of semiconductor devices: Kelvin terminal
Power dissipation: 125W
Produkt ist nicht verfügbar
Mindestbestellmenge: 2500 Stücke
Im Einkaufswagen
Stück im Wert von UAH
| GAN190-650FBEZ |
|
Hersteller: NEXPERIA
Category: SMD N channel transistors
Description: Transistor: N-JFET; GaN; unipolar; HEMT; 650V; 11.5A; Idm: 20.5A
Type of transistor: N-JFET
Technology: GaN
Polarisation: unipolar
Kind of transistor: HEMT
Drain-source voltage: 650V
Drain current: 11.5A
Pulsed drain current: 20.5A
Case: DFN5060-5
Gate-source voltage: -1.4...7V
On-state resistance: 0.19Ω
Mounting: SMD
Gate charge: 2.8nC
Kind of package: tape
Kind of channel: enhancement
Features of semiconductor devices: Kelvin terminal
Power dissipation: 125W
Category: SMD N channel transistors
Description: Transistor: N-JFET; GaN; unipolar; HEMT; 650V; 11.5A; Idm: 20.5A
Type of transistor: N-JFET
Technology: GaN
Polarisation: unipolar
Kind of transistor: HEMT
Drain-source voltage: 650V
Drain current: 11.5A
Pulsed drain current: 20.5A
Case: DFN5060-5
Gate-source voltage: -1.4...7V
On-state resistance: 0.19Ω
Mounting: SMD
Gate charge: 2.8nC
Kind of package: tape
Kind of channel: enhancement
Features of semiconductor devices: Kelvin terminal
Power dissipation: 125W
Produkt ist nicht verfügbar
Mindestbestellmenge: 2500 Stücke
Im Einkaufswagen
Stück im Wert von UAH
| GAN3R2-100CBEAZ |
|
Hersteller: NEXPERIA
Category: SMD N channel transistors
Description: Transistor: N-JFET; GaN; unipolar; HEMT; 100V; 60A; Idm: 230A; 394W
Type of transistor: N-JFET
Technology: GaN
Polarisation: unipolar
Kind of transistor: HEMT
Drain-source voltage: 100V
Drain current: 60A
Pulsed drain current: 230A
Case: WLCSP8
Gate-source voltage: -4...6V
On-state resistance: 3.2mΩ
Mounting: SMD
Gate charge: 12nC
Kind of package: tape
Kind of channel: enhancement
Power dissipation: 394W
Category: SMD N channel transistors
Description: Transistor: N-JFET; GaN; unipolar; HEMT; 100V; 60A; Idm: 230A; 394W
Type of transistor: N-JFET
Technology: GaN
Polarisation: unipolar
Kind of transistor: HEMT
Drain-source voltage: 100V
Drain current: 60A
Pulsed drain current: 230A
Case: WLCSP8
Gate-source voltage: -4...6V
On-state resistance: 3.2mΩ
Mounting: SMD
Gate charge: 12nC
Kind of package: tape
Kind of channel: enhancement
Power dissipation: 394W
Produkt ist nicht verfügbar
Mindestbestellmenge: 1500 Stücke
Im Einkaufswagen
Stück im Wert von UAH
| GAN7R0-150LBEZ |
|
Hersteller: NEXPERIA
Category: SMD N channel transistors
Description: Transistor: N-JFET; GaN; unipolar; HEMT; 150V; 28A; Idm: 120A; 28W
Type of transistor: N-JFET
Technology: GaN
Polarisation: unipolar
Kind of transistor: HEMT
Drain-source voltage: 150V
Drain current: 28A
Pulsed drain current: 120A
Case: FCLGA3
Gate-source voltage: -4...6V
On-state resistance: 7mΩ
Mounting: SMD
Gate charge: 7.6nC
Kind of package: tape
Kind of channel: enhancement
Power dissipation: 28W
Category: SMD N channel transistors
Description: Transistor: N-JFET; GaN; unipolar; HEMT; 150V; 28A; Idm: 120A; 28W
Type of transistor: N-JFET
Technology: GaN
Polarisation: unipolar
Kind of transistor: HEMT
Drain-source voltage: 150V
Drain current: 28A
Pulsed drain current: 120A
Case: FCLGA3
Gate-source voltage: -4...6V
On-state resistance: 7mΩ
Mounting: SMD
Gate charge: 7.6nC
Kind of package: tape
Kind of channel: enhancement
Power dissipation: 28W
Produkt ist nicht verfügbar
Mindestbestellmenge: 2500 Stücke
Im Einkaufswagen
Stück im Wert von UAH
| PDTC123JT-QR |
|
Hersteller: NEXPERIA
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; BRT; 50V; 0.1A; 0.25W; SOT23,TO236AB
Type of transistor: NPN
Polarisation: bipolar
Kind of transistor: BRT
Collector-emitter voltage: 50V
Collector current: 0.1A
Power dissipation: 0.25W
Case: SOT23; TO236AB
Mounting: SMD
Kind of package: 7 inch reel; tape
Base resistor: 2.2kΩ
Base-emitter resistor: 47kΩ
Application: automotive industry
Frequency: 230MHz
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; BRT; 50V; 0.1A; 0.25W; SOT23,TO236AB
Type of transistor: NPN
Polarisation: bipolar
Kind of transistor: BRT
Collector-emitter voltage: 50V
Collector current: 0.1A
Power dissipation: 0.25W
Case: SOT23; TO236AB
Mounting: SMD
Kind of package: 7 inch reel; tape
Base resistor: 2.2kΩ
Base-emitter resistor: 47kΩ
Application: automotive industry
Frequency: 230MHz
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH