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PSMN015-60BS,118 PSMN015-60BS,118 NEXPERIA PSMN015-60BS.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 36A; Idm: 201A; 86W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 36A
Pulsed drain current: 201A
Power dissipation: 86W
Case: D2PAK; SOT404
Gate-source voltage: ±20V
On-state resistance: 34mΩ
Mounting: SMD
Gate charge: 20.9nC
Kind of package: reel; tape
Kind of channel: enhancement
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PSMN013-60YLX PSMN013-60YLX NEXPERIA PSMN013-60YL.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 53A; Idm: 212A; 95W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 53A
Pulsed drain current: 212A
Power dissipation: 95W
Case: LFPAK56; PowerSO8; SOT669
Gate-source voltage: ±20V
On-state resistance: 12.1mΩ
Mounting: SMD
Gate charge: 33.2nC
Kind of package: reel; tape
Kind of channel: enhancement
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PSMN0R9-25YLC,115 PSMN0R9-25YLC,115 NEXPERIA PSMN0R9-25YLC.115.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 25V; 100A; 272W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 25V
Drain current: 100A
Power dissipation: 272W
Case: LFPAK56; PowerSO8; SOT669
Gate-source voltage: ±20V
On-state resistance: 2.125mΩ
Mounting: SMD
Gate charge: 110nC
Kind of package: reel; tape
Kind of channel: enhancement
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34+2.55 EUR
40+2.14 EUR
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250+1.78 EUR
500+1.7 EUR
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PSMN013-30YLC,115 PSMN013-30YLC,115 NEXPERIA PSMN013-30YLC.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 32A; 26W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 32A
Power dissipation: 26W
Case: LFPAK56; PowerSO8; SOT669
Gate-source voltage: ±20V
On-state resistance: 27.2mΩ
Mounting: SMD
Gate charge: 8.3nC
Kind of package: reel; tape
Kind of channel: enhancement
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1000+0.38 EUR
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PSMN0R9-30YLDX PSMN0R9-30YLDX NEXPERIA PSMN0R9-30YLD.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 284A; Idm: 1.8kA; 291W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 284A
Pulsed drain current: 1.8kA
Power dissipation: 291W
Case: LFPAK56E; PowerSO8; SOT1023
On-state resistance: 1.44mΩ
Mounting: SMD
Gate charge: 109nC
Kind of package: reel; tape
Kind of channel: enhancement
Features of semiconductor devices: logic level
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29+3 EUR
30+2.88 EUR
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PSMN030-60YS,115 PSMN030-60YS,115 NEXPERIA PSMN030-60YS.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 29A; Idm: 116A; 56W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 29A
Pulsed drain current: 116A
Power dissipation: 56W
Case: LFPAK56; PowerSO8; SOT669
Gate-source voltage: ±20V
On-state resistance: 49.6mΩ
Mounting: SMD
Gate charge: 13nC
Kind of package: reel; tape
Kind of channel: enhancement
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139+0.62 EUR
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167+0.51 EUR
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PSMN1R2-25YLC,115 PSMN1R2-25YLC,115 NEXPERIA PSMN1R2-25YLC.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 25V; 100A; Idm: 1133A; 179W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 25V
Drain current: 100A
Pulsed drain current: 1133A
Power dissipation: 179W
Case: LFPAK56; PowerSO8; SOT669
Gate-source voltage: ±20V
On-state resistance: 1.35mΩ
Mounting: SMD
Gate charge: 66nC
Kind of package: reel; tape
Kind of channel: enhancement
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PSMN038-100YLX PSMN038-100YLX NEXPERIA PSMN038-100YL.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 21.3A; Idm: 120A; 94.9W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 21.3A
Pulsed drain current: 120A
Power dissipation: 94.9W
Case: LFPAK56; PowerSO8; SOT669
On-state resistance: 103.5mΩ
Mounting: SMD
Gate charge: 39.2nC
Kind of package: reel; tape
Kind of channel: enhancement
Features of semiconductor devices: logic level
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70+1.23 EUR
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112+0.76 EUR
250+0.73 EUR
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PSMN4R6-60BS,118 PSMN4R6-60BS,118 NEXPERIA PSMN4R6-60BS.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 100A; Idm: 565A; 211W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 100A
Pulsed drain current: 565A
Power dissipation: 211W
Case: D2PAK; SOT404
Gate-source voltage: ±20V
On-state resistance: 8.6mΩ
Mounting: SMD
Gate charge: 70.8nC
Kind of package: reel; tape
Kind of channel: enhancement
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PSMN2R0-30YLE,115 PSMN2R0-30YLE,115 NEXPERIA PSMN2R0-30YLE.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 100A; Idm: 1015A; 238W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 100A
Pulsed drain current: 1015A
Power dissipation: 238W
Case: LFPAK56; PowerSO8; SOT669
Gate-source voltage: ±20V
On-state resistance: 3.8mΩ
Mounting: SMD
Gate charge: 87nC
Kind of package: reel; tape
Kind of channel: enhancement
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PSMN3R0-60PS,127 PSMN3R0-60PS,127 NEXPERIA PSMN3R0-60PS.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 100A; Idm: 824A; 306W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 100A
Pulsed drain current: 824A
Power dissipation: 306W
Case: SOT78; TO220AB
Gate-source voltage: ±20V
On-state resistance: 2.4mΩ
Mounting: THT
Gate charge: 130nC
Kind of package: tube
Kind of channel: enhancement
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PSMN3R9-60PSQ PSMN3R9-60PSQ NEXPERIA PSMN3R9-60PS.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 130A; Idm: 705A; 263W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 130A
Pulsed drain current: 705A
Power dissipation: 263W
Case: SOT78; TO220AB
Gate-source voltage: ±20V
On-state resistance: 2.94mΩ
Mounting: THT
Gate charge: 103nC
Kind of package: tube
Kind of channel: enhancement
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PSMN2R0-30PL,127 PSMN2R0-30PL,127 NEXPERIA PSMN2R0-30PL.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 100A; 211W; SOT78,TO220AB
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 100A
Power dissipation: 211W
Case: SOT78; TO220AB
Gate-source voltage: ±20V
On-state resistance: 3mΩ
Mounting: THT
Gate charge: 117nC
Kind of package: tube
Kind of channel: enhancement
Features of semiconductor devices: logic level
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29+3.01 EUR
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PSMN7R0-30YLC,115 PSMN7R0-30YLC,115 NEXPERIA PSMN7R0-30YLC.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 61A; Idm: 245A; 48W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 61A
Pulsed drain current: 245A
Power dissipation: 48W
Case: LFPAK56; PowerSO8; SOT669
Gate-source voltage: ±20V
On-state resistance: 7.6mΩ
Mounting: SMD
Gate charge: 7.9nC
Kind of package: reel; tape
Kind of channel: enhancement
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PSMN012-100YS,115 PSMN012-100YS,115 NEXPERIA PSMN012-100YS.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 60A; 130W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 60A
Power dissipation: 130W
Case: LFPAK56; PowerSO8; SOT669
Gate-source voltage: ±20V
On-state resistance: 35.8mΩ
Mounting: SMD
Gate charge: 64nC
Kind of package: reel; tape
Kind of channel: enhancement
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43+1.99 EUR
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100+1.5 EUR
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500+1.33 EUR
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PSMN017-30PL,127 PSMN017-30PL,127 NEXPERIA PSMN017-30PL.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 32A; Idm: 152A; 45W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 32A
Pulsed drain current: 152A
Power dissipation: 45W
Case: SOT78; TO220AB
Gate-source voltage: ±20V
On-state resistance: 24mΩ
Mounting: THT
Gate charge: 5.1nC
Kind of package: tube
Kind of channel: enhancement
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13+6.56 EUR
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PSMN8R0-40PS,127 PSMN8R0-40PS,127 NEXPERIA PSMN8R0-40PS.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 55A; Idm: 309A; 86W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 55A
Power dissipation: 86W
Case: SOT78; TO220AB
Gate-source voltage: ±20V
On-state resistance: 11mΩ
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Pulsed drain current: 309A
Gate charge: 21nC
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67+1.27 EUR
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PSMN1R1-30PL,127 PSMN1R1-30PL,127 NEXPERIA PSMN1R1-30PL.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 120A; Idm: 1609A; 338W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 120A
Pulsed drain current: 1609A
Power dissipation: 338W
Case: SOT78; TO220AB
Gate-source voltage: ±20V
On-state resistance: 1.8mΩ
Mounting: THT
Gate charge: 243nC
Kind of package: tube
Kind of channel: enhancement
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14+6.18 EUR
16+5.45 EUR
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PSMN7R0-60YS,115 PSMN7R0-60YS,115 NEXPERIA PSMN7R0-60YS.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 63A; 117W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 63A
Power dissipation: 117W
Case: LFPAK56; PowerSO8; SOT669
Gate-source voltage: ±20V
On-state resistance: 14.7mΩ
Mounting: SMD
Gate charge: 45nC
Kind of package: reel; tape
Kind of channel: enhancement
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44+1.94 EUR
49+1.75 EUR
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500+1.39 EUR
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PSMN1R8-80SSFJ NEXPERIA PSMN1R8-80SSF.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 80V; 205A; Idm: 1158A; 341W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 80V
Drain current: 205A
Pulsed drain current: 1158A
Power dissipation: 341W
Case: LFPAK88; SOT1235
Gate-source voltage: ±20V
On-state resistance: 4.1mΩ
Mounting: SMD
Gate charge: 222nC
Kind of package: reel; tape
Kind of channel: enhancement
Produkt ist nicht verfügbar
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PSMN1R2-25YLDX NEXPERIA PSMN1R2-25YLD.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; NextPowerS3; unipolar; 25V; 205A; Idm: 1163A
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 25V
Drain current: 205A
Pulsed drain current: 1163A
Power dissipation: 172W
Case: LFPAK56; PowerSO8; SOT669
Gate-source voltage: ±20V
On-state resistance: 2.87mΩ
Mounting: SMD
Gate charge: 60.3nC
Kind of package: reel; tape
Kind of channel: enhancement
Technology: NextPowerS3
Produkt ist nicht verfügbar
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74LV4060PW,112 74LV4060PW,112 NEXPERIA 74LV4060.pdf Category: Counters/dividers
Description: IC: digital; 14bit,binary counter; TTL; SMD; TSSOP16; LV; -40÷125°C
Type of integrated circuit: digital
Kind of integrated circuit: 14bit; binary counter
Technology: TTL
Case: TSSOP16
Mounting: SMD
Operating temperature: -40...125°C
Kind of package: tube
Family: LV
Supply voltage: 1...5.5V DC
auf Bestellung 232 Stücke:
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122+0.7 EUR
137+0.62 EUR
148+0.57 EUR
155+0.55 EUR
192+0.49 EUR
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74LV4060DB,112 74LV4060DB,112 NEXPERIA 74LV4060.pdf Category: Counters/dividers
Description: IC: digital; 14bit,binary counter; TTL; SMD; SSOP16; LV; -40÷125°C
Type of integrated circuit: digital
Kind of integrated circuit: 14bit; binary counter
Technology: TTL
Case: SSOP16
Mounting: SMD
Operating temperature: -40...125°C
Kind of package: tube
Family: LV
Supply voltage: 1...5.5V DC
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120+0.71 EUR
141+0.6 EUR
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PUMH17,115 PUMH17,115 NEXPERIA PEMH17_PUMH17.pdf Category: NPN SMD transistors
Description: Transistor: NPN x2; bipolar; BRT; 50V; 0.1A; 300mW; R1: 47kΩ; R2: 22kΩ
Type of transistor: NPN x2
Polarisation: bipolar
Kind of transistor: BRT
Collector-emitter voltage: 50V
Collector current: 0.1A
Power dissipation: 0.3W
Case: SC88; SOT363; TSSOP6
Mounting: SMD
Kind of package: reel; tape
Frequency: 230MHz
Base resistor: 47kΩ
Base-emitter resistor: 22kΩ
Produkt ist nicht verfügbar
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PUMH13,115 PUMH13,115 NEXPERIA PEMH13_PUMH13.pdf Category: NPN SMD transistors
Description: Transistor: NPN x2; bipolar; BRT; 50V; 0.1A; 300mW; R1: 4.7kΩ
Type of transistor: NPN x2
Polarisation: bipolar
Kind of transistor: BRT
Collector-emitter voltage: 50V
Collector current: 0.1A
Power dissipation: 0.3W
Case: SC88; SOT363; TSSOP6
Mounting: SMD
Kind of package: reel; tape
Frequency: 230MHz
Base resistor: 4.7kΩ
Base-emitter resistor: 47kΩ
auf Bestellung 17664 Stücke:
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625+0.13 EUR
794+0.11 EUR
926+0.092 EUR
1185+0.071 EUR
1578+0.054 EUR
1774+0.048 EUR
1894+0.045 EUR
3000+0.042 EUR
6000+0.039 EUR
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PUMH10,115 PUMH10,115 NEXPERIA PEMH10_PUMH10.pdf Category: NPN SMD transistors
Description: Transistor: NPN x2; bipolar; BRT; 50V; 0.1A; 300mW; R1: 2.2kΩ
Type of transistor: NPN x2
Polarisation: bipolar
Kind of transistor: BRT
Collector-emitter voltage: 50V
Collector current: 0.1A
Power dissipation: 0.3W
Case: SC88; SOT363; TSSOP6
Mounting: SMD
Kind of package: reel; tape
Frequency: 230MHz
Base resistor: 2.2kΩ
Base-emitter resistor: 47kΩ
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298+0.29 EUR
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PUMH1,115 PUMH1,115 NEXPERIA PEMH1_PUMH1.pdf Category: NPN SMD transistors
Description: Transistor: NPN x2; bipolar; BRT; 50V; 0.1A; 300mW; R1: 22kΩ; R2: 22kΩ
Type of transistor: NPN x2
Polarisation: bipolar
Kind of transistor: BRT
Collector-emitter voltage: 50V
Collector current: 0.1A
Power dissipation: 0.3W
Case: SC88; SOT363; TSSOP6
Mounting: SMD
Kind of package: reel; tape
Frequency: 230MHz
Base resistor: 22kΩ
Base-emitter resistor: 22kΩ
auf Bestellung 21658 Stücke:
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500+0.17 EUR
667+0.13 EUR
807+0.11 EUR
940+0.09 EUR
1099+0.077 EUR
1337+0.063 EUR
1525+0.056 EUR
1624+0.052 EUR
3000+0.046 EUR
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PUMH15,115 PUMH15,115 NEXPERIA PEMH15_PUMH15.pdf Category: NPN SMD transistors
Description: Transistor: NPN x2; bipolar; BRT; 50V; 0.1A; 300mW; R1: 4.7kΩ
Type of transistor: NPN x2
Polarisation: bipolar
Kind of transistor: BRT
Collector-emitter voltage: 50V
Collector current: 0.1A
Power dissipation: 0.3W
Case: SC88; SOT363; TSSOP6
Mounting: SMD
Kind of package: reel; tape
Frequency: 230MHz
Base resistor: 4.7kΩ
Base-emitter resistor: 4.7kΩ
auf Bestellung 2211 Stücke:
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417+0.2 EUR
758+0.11 EUR
1263+0.068 EUR
1608+0.052 EUR
1786+0.048 EUR
1931+0.044 EUR
2025+0.042 EUR
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PUMH18,115 PUMH18,115 NEXPERIA PEMH18_PUMH18.pdf Category: NPN SMD transistors
Description: Transistor: NPN x2; bipolar; BRT; 50V; 0.1A; 300mW; R1: 4.7kΩ
Type of transistor: NPN x2
Polarisation: bipolar
Kind of transistor: BRT
Collector-emitter voltage: 50V
Collector current: 0.1A
Power dissipation: 0.3W
Case: SC88; SOT363; TSSOP6
Mounting: SMD
Kind of package: reel; tape
Frequency: 230MHz
Base resistor: 4.7kΩ
Base-emitter resistor: 10kΩ
auf Bestellung 595 Stücke:
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417+0.2 EUR
595+0.14 EUR
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PUMH19,115 PUMH19,115 NEXPERIA PEMH19_PUMH19.pdf Category: NPN SMD transistors
Description: Transistor: NPN x2; bipolar; BRT; 50V; 0.1A; 300mW; 22kΩ
Type of transistor: NPN x2
Polarisation: bipolar
Kind of transistor: BRT
Collector-emitter voltage: 50V
Collector current: 0.1A
Power dissipation: 0.3W
Case: SC88; SOT363; TSSOP6
Mounting: SMD
Kind of package: reel; tape
Frequency: 230MHz
Base resistor: 22kΩ
auf Bestellung 5533 Stücke:
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1000+0.086 EUR
1220+0.07 EUR
1624+0.052 EUR
1786+0.048 EUR
1931+0.044 EUR
2025+0.042 EUR
2253+0.038 EUR
3000+0.037 EUR
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PUMH10-QX PUMH10-QX NEXPERIA PUMH10-Q.pdf Category: NPN SMD transistors
Description: Transistor: NPN x2; bipolar; BRT; 50V; 0.1A; 300mW; R1: 2.2kΩ
Type of transistor: NPN x2
Polarisation: bipolar
Kind of transistor: BRT
Collector-emitter voltage: 50V
Collector current: 0.1A
Power dissipation: 0.3W
Case: SC88; SOT363; TSSOP6
Current gain: 100
Mounting: SMD
Kind of package: reel; tape
Base resistor: 2.2kΩ
Base-emitter resistor: 47kΩ
Application: automotive industry
Produkt ist nicht verfügbar
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PUMH1-QX PUMH1-QX NEXPERIA PUMH1-Q.pdf Category: NPN SMD transistors
Description: Transistor: NPN x2; bipolar; BRT; 50V; 0.1A; 300mW; R1: 10kΩ; R2: 10kΩ
Type of transistor: NPN x2
Polarisation: bipolar
Kind of transistor: BRT
Collector-emitter voltage: 50V
Collector current: 0.1A
Power dissipation: 0.3W
Case: SC88; SOT363; TSSOP6
Mounting: SMD
Kind of package: reel; tape
Frequency: 230MHz
Base resistor: 10kΩ
Base-emitter resistor: 10kΩ
Application: automotive industry
Produkt ist nicht verfügbar
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PUMH10,125 PUMH10,125 NEXPERIA PUMH10.pdf Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; BRT; 50V; 0.1A; 300mW; SC88,SOT363,TSSOP6
Type of transistor: NPN
Polarisation: bipolar
Kind of transistor: BRT
Collector-emitter voltage: 50V
Collector current: 0.1A
Power dissipation: 0.3W
Case: SC88; SOT363; TSSOP6
Mounting: SMD
Kind of package: reel; tape
Base resistor: 2.2kΩ
Base-emitter resistor: 47kΩ
Produkt ist nicht verfügbar
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PUMH10Z PUMH10Z NEXPERIA PUMH10.pdf Category: NPN SMD transistors
Description: Transistor: NPN x2; bipolar; BRT; 50V; 0.1A; 300mW; R1: 2.2kΩ
Type of transistor: NPN x2
Polarisation: bipolar
Kind of transistor: BRT
Collector-emitter voltage: 50V
Collector current: 0.1A
Power dissipation: 0.3W
Case: SC88; SOT363; TSSOP6
Mounting: SMD
Kind of package: reel; tape
Frequency: 230MHz
Base resistor: 2.2kΩ
Base-emitter resistor: 47kΩ
Produkt ist nicht verfügbar
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PUMH15-QX PUMH15-QX NEXPERIA PUMH15-Q.pdf Category: NPN SMD transistors
Description: Transistor: NPN x2; bipolar; BRT; 50V; 0.1A; 300mW; R1: 4.7kΩ
Type of transistor: NPN x2
Polarisation: bipolar
Kind of transistor: BRT
Collector-emitter voltage: 50V
Collector current: 0.1A
Power dissipation: 0.3W
Case: SC88; SOT363; TSSOP6
Mounting: SMD
Kind of package: reel; tape
Frequency: 230MHz
Base resistor: 4.7kΩ
Base-emitter resistor: 4.7kΩ
Application: automotive industry
Produkt ist nicht verfügbar
 Mindestbestellmenge: 5 Stücke
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PUMH16,115 PUMH16,115 NEXPERIA PEMH16_PUMH16.pdf Category: NPN SMD transistors
Description: Transistor: NPN x2; bipolar; BRT; 50V; 0.1A; 300mW; R1: 22kΩ; R2: 47kΩ
Type of transistor: NPN x2
Polarisation: bipolar
Kind of transistor: BRT
Collector-emitter voltage: 50V
Collector current: 0.1A
Power dissipation: 0.3W
Case: SC88; SOT363; TSSOP6
Mounting: SMD
Kind of package: reel; tape
Frequency: 230MHz
Base resistor: 22kΩ
Base-emitter resistor: 47kΩ
Produkt ist nicht verfügbar
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PMST5551,115 PMST5551,115 NEXPERIA PMST5551.pdf Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 160V; 0.3A; 200mW; SC70,SOT323
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 160V
Collector current: 0.3A
Power dissipation: 0.2W
Case: SC70; SOT323
Current gain: 250
Mounting: SMD
Kind of package: reel; tape
Frequency: 300MHz
auf Bestellung 2492 Stücke:
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417+0.2 EUR
486+0.18 EUR
551+0.15 EUR
653+0.13 EUR
875+0.098 EUR
964+0.088 EUR
1053+0.081 EUR
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BAS16H,115 BAS16H,115 NEXPERIA BAS16_SER.pdf Category: SMD universal diodes
Description: Diode: switching; SMD; 100V; 215mA; 4ns; SOD123F; Ufmax: 1.25V
Type of diode: switching
Mounting: SMD
Max. off-state voltage: 0.1kV
Load current: 0.215A
Reverse recovery time: 4ns
Semiconductor structure: single diode
Case: SOD123F
Max. forward voltage: 1.25V
Max. forward impulse current: 4A
Kind of package: reel; tape
Features of semiconductor devices: fast switching
Produkt ist nicht verfügbar
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74HCT4046AD,118 74HCT4046AD,118 NEXPERIA 74HCT4046AD,118.pdf Category: Other logic integrated circuits
Description: IC: digital; phase-locked loop; CMOS,TTL; 4.5÷5.5VDC; SMD; SO16
Kind of package: reel; tape
Mounting: SMD
Supply voltage: 4.5...5.5V DC
Type of integrated circuit: digital
Operating temperature: -40...125°C
Technology: CMOS; TTL
Case: SO16
Family: HCT
Kind of integrated circuit: phase-locked loop
auf Bestellung 409 Stücke:
Lieferzeit 14-21 Tag (e)
55+1.57 EUR
72+1.19 EUR
100+1.06 EUR
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PBSS8110Z,135 PBSS8110Z,135 NEXPERIA PBSS8110Z.pdf Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 100V; 1A; SC73,SOT223
Mounting: SMD
Frequency: 100MHz
Collector current: 1A
Collector-emitter voltage: 100V
Polarisation: bipolar
Type of transistor: NPN
Current gain: 80...500
Kind of package: reel; tape
Case: SC73; SOT223
Produkt ist nicht verfügbar
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PBSS8110X,135 PBSS8110X,135 NEXPERIA PBSS8110X.pdf Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 100V; 1A; SC62,SOT89
Mounting: SMD
Frequency: 100MHz
Collector current: 1A
Collector-emitter voltage: 100V
Polarisation: bipolar
Type of transistor: NPN
Current gain: 80...500
Kind of package: reel; tape
Case: SC62; SOT89
Produkt ist nicht verfügbar
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PBSS8110T-QR PBSS8110T-QR NEXPERIA PBSS8110T-Q.pdf Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 100V; 1A; 0.48W; SOT23,TO236AB
Mounting: SMD
Frequency: 100MHz
Collector current: 1A
Collector-emitter voltage: 100V
Power dissipation: 0.48W
Polarisation: bipolar
Application: automotive industry
Type of transistor: NPN
Kind of package: 7 inch reel; tape
Case: SOT23; TO236AB
Produkt ist nicht verfügbar
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PBSS8110Y,115 PBSS8110Y,115 NEXPERIA PBSS8110Y.pdf Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 100V; 1A; 625mW; SC88,SOT363,TSSOP6
Mounting: SMD
Frequency: 100MHz
Collector current: 1A
Collector-emitter voltage: 100V
Power dissipation: 0.625W
Polarisation: bipolar
Type of transistor: NPN
Current gain: 80...500
Kind of package: reel; tape
Case: SC88; SOT363; TSSOP6
Produkt ist nicht verfügbar
 Mindestbestellmenge: 3000 Stücke
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PBSS5580PA,115 NEXPERIA PBSS5580PA.pdf Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 80V; 4A; DFN2020-3,SOT1061
Mounting: SMD
Frequency: 110MHz
Collector current: 4A
Collector-emitter voltage: 80V
Polarisation: bipolar
Type of transistor: PNP
Current gain: 70...265
Kind of package: reel; tape
Case: DFN2020-3; SOT1061
Produkt ist nicht verfügbar
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74LVC1G08GM,132 NEXPERIA 74LVC1G08GM,132.pdf Category: Gates, inverters
Description: IC: digital; AND; Ch: 1; IN: 2; CMOS,TTL; SMD; XSON6; Mini Logic; 4uA
Type of integrated circuit: digital
Kind of gate: AND
Number of channels: single; 1
Number of inputs: 2
Technology: CMOS; TTL
Mounting: SMD
Case: XSON6
Supply voltage: 1.65...5.5V DC
Operating temperature: -40...125°C
Kind of package: reel; tape
Quiescent current: 4µA
Family: LVC
Delay time: 10.5ns
Manufacturer series: Mini Logic
Produkt ist nicht verfügbar
 Mindestbestellmenge: 5000 Stücke
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74LVC1G08GN,132 NEXPERIA 74LVC1G08GN,132.pdf Category: Gates, inverters
Description: IC: digital; AND; Ch: 1; IN: 2; CMOS,TTL; SMD; XSON6; Mini Logic; LVC
Type of integrated circuit: digital
Kind of gate: AND
Number of channels: 1
Number of inputs: 2
Technology: CMOS; TTL
Mounting: SMD
Case: XSON6
Supply voltage: 1.65...5.5V DC
Operating temperature: -40...125°C
Kind of package: reel; tape
Family: LVC
Manufacturer series: Mini Logic
Produkt ist nicht verfügbar
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74LVC1G08GS,132 NEXPERIA 74LVC1G08GS,132.pdf Category: Gates, inverters
Description: IC: digital; AND; Ch: 1; IN: 2; CMOS,TTL; SMD; XSON6; Mini Logic; 4uA
Type of integrated circuit: digital
Kind of gate: AND
Number of channels: single; 1
Number of inputs: 2
Technology: CMOS; TTL
Mounting: SMD
Case: XSON6
Supply voltage: 1.65...5.5V DC
Operating temperature: -40...125°C
Kind of package: reel; tape
Quiescent current: 4µA
Family: LVC
Delay time: 10.5ns
Manufacturer series: Mini Logic
Produkt ist nicht verfügbar
 Mindestbestellmenge: 5000 Stücke
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HEF4027BT,653 HEF4027BT,653 NEXPERIA HEF4027BT,653.pdf Category: Flip-Flops
Description: IC: digital; JK flip-flop; Ch: 2; IN: 5; CMOS; SMD; SO16; HEF4000B
Operating temperature: -40...85°C
Type of integrated circuit: digital
Technology: CMOS
Trigger: negative-edge-triggered
Quiescent current: 120µA
Number of inputs: 5
Kind of package: reel; tape
Case: SO16
Family: HEF4000B
Kind of integrated circuit: JK flip-flop
Number of channels: 2
Mounting: SMD
Supply voltage: 3...15V DC
auf Bestellung 2558 Stücke:
Lieferzeit 14-21 Tag (e)
105+0.82 EUR
133+0.64 EUR
197+0.43 EUR
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BAS116H,115 BAS116H,115 NEXPERIA BAS116H.pdf Category: SMD universal diodes
Description: Diode: switching; SMD; 75V; 215mA; 3us; SOD123F; Ufmax: 1.25V
Type of diode: switching
Mounting: SMD
Max. off-state voltage: 75V
Load current: 0.215A
Reverse recovery time: 3µs
Semiconductor structure: single diode
Case: SOD123F
Max. forward voltage: 1.25V
Max. forward impulse current: 4A
Kind of package: reel; tape
Features of semiconductor devices: fast switching
auf Bestellung 3 Stücke:
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3+28.37 EUR
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BAS116,215 BAS116,215 NEXPERIA BAS116.pdf Category: SMD universal diodes
Description: Diode: switching; SMD; 85V; 215mA; 3us; SOT23; Ufmax: 1.25V; Ifsm: 4A
Type of diode: switching
Mounting: SMD
Max. off-state voltage: 85V
Load current: 0.215A
Reverse recovery time: 3µs
Semiconductor structure: single diode
Case: SOT23
Max. forward voltage: 1.25V
Max. forward impulse current: 4A
Kind of package: reel; tape
Features of semiconductor devices: fast switching
Produkt ist nicht verfügbar
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BAS116GWX BAS116GWX NEXPERIA BAS116GW.pdf Category: SMD universal diodes
Description: Diode: switching; SMD; 85V; 215mA; 3us; SOD123; Ufmax: 1.25V; Ifsm: 4A
Type of diode: switching
Mounting: SMD
Max. off-state voltage: 85V
Load current: 0.215A
Reverse recovery time: 3µs
Semiconductor structure: single diode
Capacitance: 2pF
Case: SOD123
Max. forward voltage: 1.25V
Max. forward impulse current: 4A
Leakage current: 80nA
Kind of package: reel; tape
Features of semiconductor devices: fast switching
Produkt ist nicht verfügbar
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BAS116LYL BAS116LYL NEXPERIA BAS116L.pdf Category: SMD universal diodes
Description: Diode: switching; SMD; 85V; 325mA; 3us; DFN1006-2,SOD882; Ifsm: 4A
Type of diode: switching
Mounting: SMD
Max. off-state voltage: 85V
Load current: 325mA
Reverse recovery time: 3µs
Semiconductor structure: single diode
Case: DFN1006-2; SOD882
Max. forward voltage: 1.25V
Max. forward impulse current: 4A
Kind of package: reel; tape
Features of semiconductor devices: fast switching
Produkt ist nicht verfügbar
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PMBT3906,215 PMBT3906,215 NEXPERIA PMBT3906.215.pdf Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 40V; 0.2A; 250mW; SOT23,TO236AB
Type of transistor: PNP
Polarisation: bipolar
Collector-emitter voltage: 40V
Collector current: 0.2A
Power dissipation: 0.25W
Case: SOT23; TO236AB
Mounting: SMD
Kind of package: 7 inch reel; tape
Frequency: 250MHz
auf Bestellung 4846 Stücke:
Lieferzeit 14-21 Tag (e)
715+0.12 EUR
962+0.088 EUR
1087+0.079 EUR
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PMSS3906,115 PMSS3906,115 NEXPERIA PMSS3906.pdf Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 40V; 0.1A; 200mW; SC70,SOT323
Case: SC70; SOT323
Mounting: SMD
Kind of package: reel; tape
Type of transistor: PNP
Collector current: 0.1A
Power dissipation: 0.2W
Current gain: 30...300
Collector-emitter voltage: 40V
Polarisation: bipolar
auf Bestellung 2858 Stücke:
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334+0.25 EUR
625+0.13 EUR
962+0.088 EUR
1235+0.069 EUR
1352+0.063 EUR
1458+0.058 EUR
1534+0.056 EUR
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PMEG6020ER,115 PMEG6020ER,115 NEXPERIA PMEG6020ER.pdf Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; CFP3,SOD123W; SMD; 60V; 2A; reel,tape
Type of diode: Schottky rectifying
Max. off-state voltage: 60V
Max. forward impulse current: 50A
Semiconductor structure: single diode
Case: CFP3; SOD123W
Mounting: SMD
Kind of package: reel; tape
Max. forward voltage: 0.53V
Load current: 2A
auf Bestellung 231058 Stücke:
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186+0.46 EUR
223+0.38 EUR
265+0.32 EUR
397+0.21 EUR
532+0.15 EUR
589+0.14 EUR
1000+0.13 EUR
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PMEG6030EP,115 PMEG6030EP,115 NEXPERIA PMEG6030EP.pdf Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; CFP5,SOD128; SMD; 60V; 3A; reel,tape
Type of diode: Schottky rectifying
Max. off-state voltage: 60V
Max. forward impulse current: 50A
Semiconductor structure: single diode
Case: CFP5; SOD128
Mounting: SMD
Load current: 3A
Kind of package: reel; tape
Max. forward voltage: 0.53V
auf Bestellung 63460 Stücke:
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136+0.63 EUR
180+0.48 EUR
214+0.39 EUR
275+0.31 EUR
500+0.24 EUR
1000+0.23 EUR
Mindestbestellmenge: 136 Stücke
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PMEG10010ELRX PMEG10010ELRX NEXPERIA PMEG10010ELR.pdf Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; CFP3,SOD123W; SMD; 100V; 1.4A; 3.7ns
Type of diode: Schottky rectifying
Max. off-state voltage: 0.1kV
Max. forward impulse current: 50A
Semiconductor structure: single diode
Case: CFP3; SOD123W
Mounting: SMD
Kind of package: reel; tape
Max. forward voltage: 0.68V
Load current: 1.4A
Leakage current: 0.5mA
Capacitance: 28pF
Reverse recovery time: 3.7ns
auf Bestellung 199779 Stücke:
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278+0.31 EUR
388+0.21 EUR
532+0.15 EUR
610+0.14 EUR
1000+0.12 EUR
3000+0.11 EUR
6000+0.1 EUR
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NX2301P,215 NX2301P,215 NEXPERIA NX2301P.pdf Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -20V; -2A; 400mW; SOT23,TO236AB
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -20V
Drain current: -2A
Power dissipation: 0.4W
Case: SOT23; TO236AB
Gate-source voltage: ±8V
On-state resistance: 0.27Ω
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
Gate charge: 6nC
auf Bestellung 1990 Stücke:
Lieferzeit 14-21 Tag (e)
313+0.27 EUR
424+0.2 EUR
561+0.15 EUR
616+0.14 EUR
739+0.12 EUR
1000+0.1 EUR
Mindestbestellmenge: 313 Stücke
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BZV49-C3V9,115 BZV49-C3V9,115 NEXPERIA BZV49-DTE.pdf Category: SMD Zener diodes
Description: Diode: Zener; 1W; 3.9V; SMD; SOT89; Ifmax: 250mA; single diode
Case: SOT89
Mounting: SMD
Kind of package: reel; tape
Tolerance: ±5%
Max. load current: 0.25A
Semiconductor structure: single diode
Zener voltage: 3.9V
Type of diode: Zener
Max. forward voltage: 1V
Power dissipation: 1W
auf Bestellung 998 Stücke:
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71+1.21 EUR
105+0.81 EUR
133+0.64 EUR
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BZX884-B3V9,315 BZX884-B3V9,315 NEXPERIA BZX884_SER.pdf Category: SMD Zener diodes
Description: Diode: Zener; 0.25W; 3.9V; SMD; DFN1006-2,SOD882; Ifmax: 200mA
Case: DFN1006-2; SOD882
Mounting: SMD
Tolerance: ±2%
Max. forward voltage: 0.9V
Power dissipation: 0.25W
Max. load current: 0.2A
Kind of package: reel; tape
Semiconductor structure: single diode
Zener voltage: 3.9V
Type of diode: Zener
auf Bestellung 4680 Stücke:
Lieferzeit 14-21 Tag (e)
385+0.23 EUR
491+0.18 EUR
575+0.14 EUR
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PSMN015-60BS,118 PSMN015-60BS.pdf
PSMN015-60BS,118
Hersteller: NEXPERIA
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 36A; Idm: 201A; 86W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 36A
Pulsed drain current: 201A
Power dissipation: 86W
Case: D2PAK; SOT404
Gate-source voltage: ±20V
On-state resistance: 34mΩ
Mounting: SMD
Gate charge: 20.9nC
Kind of package: reel; tape
Kind of channel: enhancement
auf Bestellung 596 Stücke:
Lieferzeit 14-21 Tag (e)
AnzahlPrivatkunde
41+2.07 EUR
53+1.63 EUR
60+1.43 EUR
100+1.31 EUR
250+1.26 EUR
500+1.12 EUR
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PSMN013-60YLX PSMN013-60YL.pdf
PSMN013-60YLX
Hersteller: NEXPERIA
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 53A; Idm: 212A; 95W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 53A
Pulsed drain current: 212A
Power dissipation: 95W
Case: LFPAK56; PowerSO8; SOT669
Gate-source voltage: ±20V
On-state resistance: 12.1mΩ
Mounting: SMD
Gate charge: 33.2nC
Kind of package: reel; tape
Kind of channel: enhancement
auf Bestellung 3 Stücke:
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3+28.37 EUR
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PSMN0R9-25YLC,115 PSMN0R9-25YLC.115.pdf
PSMN0R9-25YLC,115
Hersteller: NEXPERIA
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 25V; 100A; 272W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 25V
Drain current: 100A
Power dissipation: 272W
Case: LFPAK56; PowerSO8; SOT669
Gate-source voltage: ±20V
On-state resistance: 2.125mΩ
Mounting: SMD
Gate charge: 110nC
Kind of package: reel; tape
Kind of channel: enhancement
auf Bestellung 1029 Stücke:
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30+2.84 EUR
34+2.55 EUR
40+2.14 EUR
100+1.94 EUR
250+1.78 EUR
500+1.7 EUR
1000+1.54 EUR
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PSMN013-30YLC,115 PSMN013-30YLC.pdf
PSMN013-30YLC,115
Hersteller: NEXPERIA
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 32A; 26W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 32A
Power dissipation: 26W
Case: LFPAK56; PowerSO8; SOT669
Gate-source voltage: ±20V
On-state resistance: 27.2mΩ
Mounting: SMD
Gate charge: 8.3nC
Kind of package: reel; tape
Kind of channel: enhancement
auf Bestellung 1683 Stücke:
Lieferzeit 14-21 Tag (e)
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103+0.83 EUR
119+0.71 EUR
131+0.65 EUR
181+0.48 EUR
250+0.43 EUR
500+0.39 EUR
1000+0.38 EUR
1500+0.33 EUR
Mindestbestellmenge: 103 Stücke
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PSMN0R9-30YLDX PSMN0R9-30YLD.pdf
PSMN0R9-30YLDX
Hersteller: NEXPERIA
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 284A; Idm: 1.8kA; 291W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 284A
Pulsed drain current: 1.8kA
Power dissipation: 291W
Case: LFPAK56E; PowerSO8; SOT1023
On-state resistance: 1.44mΩ
Mounting: SMD
Gate charge: 109nC
Kind of package: reel; tape
Kind of channel: enhancement
Features of semiconductor devices: logic level
auf Bestellung 1325 Stücke:
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AnzahlPrivatkunde
28+3.09 EUR
29+3 EUR
30+2.88 EUR
100+2.8 EUR
250+2.69 EUR
500+2.62 EUR
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PSMN030-60YS,115 PSMN030-60YS.pdf
PSMN030-60YS,115
Hersteller: NEXPERIA
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 29A; Idm: 116A; 56W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 29A
Pulsed drain current: 116A
Power dissipation: 56W
Case: LFPAK56; PowerSO8; SOT669
Gate-source voltage: ±20V
On-state resistance: 49.6mΩ
Mounting: SMD
Gate charge: 13nC
Kind of package: reel; tape
Kind of channel: enhancement
auf Bestellung 1336 Stücke:
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105+0.82 EUR
139+0.62 EUR
154+0.55 EUR
167+0.51 EUR
250+0.49 EUR
500+0.44 EUR
1000+0.43 EUR
Mindestbestellmenge: 105 Stücke
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PSMN1R2-25YLC,115 PSMN1R2-25YLC.pdf
PSMN1R2-25YLC,115
Hersteller: NEXPERIA
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 25V; 100A; Idm: 1133A; 179W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 25V
Drain current: 100A
Pulsed drain current: 1133A
Power dissipation: 179W
Case: LFPAK56; PowerSO8; SOT669
Gate-source voltage: ±20V
On-state resistance: 1.35mΩ
Mounting: SMD
Gate charge: 66nC
Kind of package: reel; tape
Kind of channel: enhancement
auf Bestellung 1391 Stücke:
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55+1.57 EUR
69+1.24 EUR
80+1.07 EUR
100+1.02 EUR
250+0.94 EUR
500+0.9 EUR
1000+0.82 EUR
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PSMN038-100YLX PSMN038-100YL.pdf
PSMN038-100YLX
Hersteller: NEXPERIA
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 21.3A; Idm: 120A; 94.9W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 21.3A
Pulsed drain current: 120A
Power dissipation: 94.9W
Case: LFPAK56; PowerSO8; SOT669
On-state resistance: 103.5mΩ
Mounting: SMD
Gate charge: 39.2nC
Kind of package: reel; tape
Kind of channel: enhancement
Features of semiconductor devices: logic level
auf Bestellung 589 Stücke:
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AnzahlPrivatkunde
70+1.23 EUR
94+0.92 EUR
103+0.82 EUR
112+0.76 EUR
250+0.73 EUR
500+0.65 EUR
Mindestbestellmenge: 70 Stücke
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PSMN4R6-60BS,118 PSMN4R6-60BS.pdf
PSMN4R6-60BS,118
Hersteller: NEXPERIA
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 100A; Idm: 565A; 211W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 100A
Pulsed drain current: 565A
Power dissipation: 211W
Case: D2PAK; SOT404
Gate-source voltage: ±20V
On-state resistance: 8.6mΩ
Mounting: SMD
Gate charge: 70.8nC
Kind of package: reel; tape
Kind of channel: enhancement
auf Bestellung 691 Stücke:
Lieferzeit 14-21 Tag (e)
AnzahlPrivatkunde
25+3.47 EUR
33+2.61 EUR
37+2.34 EUR
100+2.18 EUR
250+2.07 EUR
500+1.87 EUR
Mindestbestellmenge: 25 Stücke
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PSMN2R0-30YLE,115 PSMN2R0-30YLE.pdf
PSMN2R0-30YLE,115
Hersteller: NEXPERIA
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 100A; Idm: 1015A; 238W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 100A
Pulsed drain current: 1015A
Power dissipation: 238W
Case: LFPAK56; PowerSO8; SOT669
Gate-source voltage: ±20V
On-state resistance: 3.8mΩ
Mounting: SMD
Gate charge: 87nC
Kind of package: reel; tape
Kind of channel: enhancement
auf Bestellung 1308 Stücke:
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44+1.98 EUR
48+1.78 EUR
52+1.65 EUR
100+1.57 EUR
250+1.43 EUR
500+1.39 EUR
Mindestbestellmenge: 44 Stücke
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PSMN3R0-60PS,127 PSMN3R0-60PS.pdf
PSMN3R0-60PS,127
Hersteller: NEXPERIA
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 100A; Idm: 824A; 306W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 100A
Pulsed drain current: 824A
Power dissipation: 306W
Case: SOT78; TO220AB
Gate-source voltage: ±20V
On-state resistance: 2.4mΩ
Mounting: THT
Gate charge: 130nC
Kind of package: tube
Kind of channel: enhancement
auf Bestellung 10 Stücke:
Lieferzeit 14-21 Tag (e)
AnzahlPrivatkunde
10+8.51 EUR
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PSMN3R9-60PSQ PSMN3R9-60PS.pdf
PSMN3R9-60PSQ
Hersteller: NEXPERIA
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 130A; Idm: 705A; 263W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 130A
Pulsed drain current: 705A
Power dissipation: 263W
Case: SOT78; TO220AB
Gate-source voltage: ±20V
On-state resistance: 2.94mΩ
Mounting: THT
Gate charge: 103nC
Kind of package: tube
Kind of channel: enhancement
auf Bestellung 64 Stücke:
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22+3.96 EUR
24+3.57 EUR
26+3.36 EUR
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PSMN2R0-30PL,127 PSMN2R0-30PL.pdf
PSMN2R0-30PL,127
Hersteller: NEXPERIA
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 100A; 211W; SOT78,TO220AB
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 100A
Power dissipation: 211W
Case: SOT78; TO220AB
Gate-source voltage: ±20V
On-state resistance: 3mΩ
Mounting: THT
Gate charge: 117nC
Kind of package: tube
Kind of channel: enhancement
Features of semiconductor devices: logic level
auf Bestellung 40 Stücke:
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26+3.32 EUR
29+3.01 EUR
32+2.69 EUR
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PSMN7R0-30YLC,115 PSMN7R0-30YLC.pdf
PSMN7R0-30YLC,115
Hersteller: NEXPERIA
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 61A; Idm: 245A; 48W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 61A
Pulsed drain current: 245A
Power dissipation: 48W
Case: LFPAK56; PowerSO8; SOT669
Gate-source voltage: ±20V
On-state resistance: 7.6mΩ
Mounting: SMD
Gate charge: 7.9nC
Kind of package: reel; tape
Kind of channel: enhancement
auf Bestellung 1390 Stücke:
Lieferzeit 14-21 Tag (e)
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65+1.33 EUR
96+0.89 EUR
152+0.56 EUR
250+0.55 EUR
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PSMN012-100YS,115 PSMN012-100YS.pdf
PSMN012-100YS,115
Hersteller: NEXPERIA
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 60A; 130W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 60A
Power dissipation: 130W
Case: LFPAK56; PowerSO8; SOT669
Gate-source voltage: ±20V
On-state resistance: 35.8mΩ
Mounting: SMD
Gate charge: 64nC
Kind of package: reel; tape
Kind of channel: enhancement
auf Bestellung 1370 Stücke:
Lieferzeit 14-21 Tag (e)
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32+2.69 EUR
43+1.99 EUR
52+1.67 EUR
100+1.5 EUR
250+1.39 EUR
500+1.33 EUR
1000+1.19 EUR
Mindestbestellmenge: 32 Stücke
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PSMN017-30PL,127 PSMN017-30PL.pdf
PSMN017-30PL,127
Hersteller: NEXPERIA
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 32A; Idm: 152A; 45W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 32A
Pulsed drain current: 152A
Power dissipation: 45W
Case: SOT78; TO220AB
Gate-source voltage: ±20V
On-state resistance: 24mΩ
Mounting: THT
Gate charge: 5.1nC
Kind of package: tube
Kind of channel: enhancement
auf Bestellung 13 Stücke:
Lieferzeit 14-21 Tag (e)
AnzahlPrivatkunde
13+6.56 EUR
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PSMN8R0-40PS,127 PSMN8R0-40PS.pdf
PSMN8R0-40PS,127
Hersteller: NEXPERIA
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 55A; Idm: 309A; 86W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 55A
Power dissipation: 86W
Case: SOT78; TO220AB
Gate-source voltage: ±20V
On-state resistance: 11mΩ
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Pulsed drain current: 309A
Gate charge: 21nC
auf Bestellung 67 Stücke:
Lieferzeit 14-21 Tag (e)
AnzahlPrivatkunde
67+1.27 EUR
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PSMN1R1-30PL,127 PSMN1R1-30PL.pdf
PSMN1R1-30PL,127
Hersteller: NEXPERIA
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 120A; Idm: 1609A; 338W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 120A
Pulsed drain current: 1609A
Power dissipation: 338W
Case: SOT78; TO220AB
Gate-source voltage: ±20V
On-state resistance: 1.8mΩ
Mounting: THT
Gate charge: 243nC
Kind of package: tube
Kind of channel: enhancement
auf Bestellung 32 Stücke:
Lieferzeit 14-21 Tag (e)
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14+6.18 EUR
16+5.45 EUR
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PSMN7R0-60YS,115 PSMN7R0-60YS.pdf
PSMN7R0-60YS,115
Hersteller: NEXPERIA
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 63A; 117W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 63A
Power dissipation: 117W
Case: LFPAK56; PowerSO8; SOT669
Gate-source voltage: ±20V
On-state resistance: 14.7mΩ
Mounting: SMD
Gate charge: 45nC
Kind of package: reel; tape
Kind of channel: enhancement
auf Bestellung 1417 Stücke:
Lieferzeit 14-21 Tag (e)
AnzahlPrivatkunde
33+2.61 EUR
44+1.94 EUR
49+1.75 EUR
100+1.63 EUR
250+1.57 EUR
500+1.39 EUR
1000+1.33 EUR
Mindestbestellmenge: 33 Stücke
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PSMN1R8-80SSFJ PSMN1R8-80SSF.pdf
Hersteller: NEXPERIA
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 80V; 205A; Idm: 1158A; 341W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 80V
Drain current: 205A
Pulsed drain current: 1158A
Power dissipation: 341W
Case: LFPAK88; SOT1235
Gate-source voltage: ±20V
On-state resistance: 4.1mΩ
Mounting: SMD
Gate charge: 222nC
Kind of package: reel; tape
Kind of channel: enhancement
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
PSMN1R2-25YLDX PSMN1R2-25YLD.pdf
Hersteller: NEXPERIA
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; NextPowerS3; unipolar; 25V; 205A; Idm: 1163A
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 25V
Drain current: 205A
Pulsed drain current: 1163A
Power dissipation: 172W
Case: LFPAK56; PowerSO8; SOT669
Gate-source voltage: ±20V
On-state resistance: 2.87mΩ
Mounting: SMD
Gate charge: 60.3nC
Kind of package: reel; tape
Kind of channel: enhancement
Technology: NextPowerS3
Produkt ist nicht verfügbar
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74LV4060PW,112 74LV4060.pdf
74LV4060PW,112
Hersteller: NEXPERIA
Category: Counters/dividers
Description: IC: digital; 14bit,binary counter; TTL; SMD; TSSOP16; LV; -40÷125°C
Type of integrated circuit: digital
Kind of integrated circuit: 14bit; binary counter
Technology: TTL
Case: TSSOP16
Mounting: SMD
Operating temperature: -40...125°C
Kind of package: tube
Family: LV
Supply voltage: 1...5.5V DC
auf Bestellung 232 Stücke:
Lieferzeit 14-21 Tag (e)
AnzahlPrivatkunde
122+0.7 EUR
137+0.62 EUR
148+0.57 EUR
155+0.55 EUR
192+0.49 EUR
Mindestbestellmenge: 122 Stücke
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74LV4060DB,112 74LV4060.pdf
74LV4060DB,112
Hersteller: NEXPERIA
Category: Counters/dividers
Description: IC: digital; 14bit,binary counter; TTL; SMD; SSOP16; LV; -40÷125°C
Type of integrated circuit: digital
Kind of integrated circuit: 14bit; binary counter
Technology: TTL
Case: SSOP16
Mounting: SMD
Operating temperature: -40...125°C
Kind of package: tube
Family: LV
Supply voltage: 1...5.5V DC
auf Bestellung 141 Stücke:
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120+0.71 EUR
141+0.6 EUR
Mindestbestellmenge: 120 Stücke
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PUMH17,115 PEMH17_PUMH17.pdf
PUMH17,115
Hersteller: NEXPERIA
Category: NPN SMD transistors
Description: Transistor: NPN x2; bipolar; BRT; 50V; 0.1A; 300mW; R1: 47kΩ; R2: 22kΩ
Type of transistor: NPN x2
Polarisation: bipolar
Kind of transistor: BRT
Collector-emitter voltage: 50V
Collector current: 0.1A
Power dissipation: 0.3W
Case: SC88; SOT363; TSSOP6
Mounting: SMD
Kind of package: reel; tape
Frequency: 230MHz
Base resistor: 47kΩ
Base-emitter resistor: 22kΩ
Produkt ist nicht verfügbar
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PUMH13,115 PEMH13_PUMH13.pdf
PUMH13,115
Hersteller: NEXPERIA
Category: NPN SMD transistors
Description: Transistor: NPN x2; bipolar; BRT; 50V; 0.1A; 300mW; R1: 4.7kΩ
Type of transistor: NPN x2
Polarisation: bipolar
Kind of transistor: BRT
Collector-emitter voltage: 50V
Collector current: 0.1A
Power dissipation: 0.3W
Case: SC88; SOT363; TSSOP6
Mounting: SMD
Kind of package: reel; tape
Frequency: 230MHz
Base resistor: 4.7kΩ
Base-emitter resistor: 47kΩ
auf Bestellung 17664 Stücke:
Lieferzeit 14-21 Tag (e)
AnzahlPrivatkunde
625+0.13 EUR
794+0.11 EUR
926+0.092 EUR
1185+0.071 EUR
1578+0.054 EUR
1774+0.048 EUR
1894+0.045 EUR
3000+0.042 EUR
6000+0.039 EUR
Mindestbestellmenge: 625 Stücke
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PUMH10,115 PEMH10_PUMH10.pdf
PUMH10,115
Hersteller: NEXPERIA
Category: NPN SMD transistors
Description: Transistor: NPN x2; bipolar; BRT; 50V; 0.1A; 300mW; R1: 2.2kΩ
Type of transistor: NPN x2
Polarisation: bipolar
Kind of transistor: BRT
Collector-emitter voltage: 50V
Collector current: 0.1A
Power dissipation: 0.3W
Case: SC88; SOT363; TSSOP6
Mounting: SMD
Kind of package: reel; tape
Frequency: 230MHz
Base resistor: 2.2kΩ
Base-emitter resistor: 47kΩ
auf Bestellung 298 Stücke:
Lieferzeit 14-21 Tag (e)
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298+0.29 EUR
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PUMH1,115 PEMH1_PUMH1.pdf
PUMH1,115
Hersteller: NEXPERIA
Category: NPN SMD transistors
Description: Transistor: NPN x2; bipolar; BRT; 50V; 0.1A; 300mW; R1: 22kΩ; R2: 22kΩ
Type of transistor: NPN x2
Polarisation: bipolar
Kind of transistor: BRT
Collector-emitter voltage: 50V
Collector current: 0.1A
Power dissipation: 0.3W
Case: SC88; SOT363; TSSOP6
Mounting: SMD
Kind of package: reel; tape
Frequency: 230MHz
Base resistor: 22kΩ
Base-emitter resistor: 22kΩ
auf Bestellung 21658 Stücke:
Lieferzeit 14-21 Tag (e)
AnzahlPrivatkunde
500+0.17 EUR
667+0.13 EUR
807+0.11 EUR
940+0.09 EUR
1099+0.077 EUR
1337+0.063 EUR
1525+0.056 EUR
1624+0.052 EUR
3000+0.046 EUR
Mindestbestellmenge: 500 Stücke
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PUMH15,115 PEMH15_PUMH15.pdf
PUMH15,115
Hersteller: NEXPERIA
Category: NPN SMD transistors
Description: Transistor: NPN x2; bipolar; BRT; 50V; 0.1A; 300mW; R1: 4.7kΩ
Type of transistor: NPN x2
Polarisation: bipolar
Kind of transistor: BRT
Collector-emitter voltage: 50V
Collector current: 0.1A
Power dissipation: 0.3W
Case: SC88; SOT363; TSSOP6
Mounting: SMD
Kind of package: reel; tape
Frequency: 230MHz
Base resistor: 4.7kΩ
Base-emitter resistor: 4.7kΩ
auf Bestellung 2211 Stücke:
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AnzahlPrivatkunde
417+0.2 EUR
758+0.11 EUR
1263+0.068 EUR
1608+0.052 EUR
1786+0.048 EUR
1931+0.044 EUR
2025+0.042 EUR
Mindestbestellmenge: 417 Stücke
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PUMH18,115 PEMH18_PUMH18.pdf
PUMH18,115
Hersteller: NEXPERIA
Category: NPN SMD transistors
Description: Transistor: NPN x2; bipolar; BRT; 50V; 0.1A; 300mW; R1: 4.7kΩ
Type of transistor: NPN x2
Polarisation: bipolar
Kind of transistor: BRT
Collector-emitter voltage: 50V
Collector current: 0.1A
Power dissipation: 0.3W
Case: SC88; SOT363; TSSOP6
Mounting: SMD
Kind of package: reel; tape
Frequency: 230MHz
Base resistor: 4.7kΩ
Base-emitter resistor: 10kΩ
auf Bestellung 595 Stücke:
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417+0.2 EUR
595+0.14 EUR
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PUMH19,115 PEMH19_PUMH19.pdf
PUMH19,115
Hersteller: NEXPERIA
Category: NPN SMD transistors
Description: Transistor: NPN x2; bipolar; BRT; 50V; 0.1A; 300mW; 22kΩ
Type of transistor: NPN x2
Polarisation: bipolar
Kind of transistor: BRT
Collector-emitter voltage: 50V
Collector current: 0.1A
Power dissipation: 0.3W
Case: SC88; SOT363; TSSOP6
Mounting: SMD
Kind of package: reel; tape
Frequency: 230MHz
Base resistor: 22kΩ
auf Bestellung 5533 Stücke:
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1000+0.086 EUR
1220+0.07 EUR
1624+0.052 EUR
1786+0.048 EUR
1931+0.044 EUR
2025+0.042 EUR
2253+0.038 EUR
3000+0.037 EUR
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PUMH10-QX PUMH10-Q.pdf
PUMH10-QX
Hersteller: NEXPERIA
Category: NPN SMD transistors
Description: Transistor: NPN x2; bipolar; BRT; 50V; 0.1A; 300mW; R1: 2.2kΩ
Type of transistor: NPN x2
Polarisation: bipolar
Kind of transistor: BRT
Collector-emitter voltage: 50V
Collector current: 0.1A
Power dissipation: 0.3W
Case: SC88; SOT363; TSSOP6
Current gain: 100
Mounting: SMD
Kind of package: reel; tape
Base resistor: 2.2kΩ
Base-emitter resistor: 47kΩ
Application: automotive industry
Produkt ist nicht verfügbar
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PUMH1-QX PUMH1-Q.pdf
PUMH1-QX
Hersteller: NEXPERIA
Category: NPN SMD transistors
Description: Transistor: NPN x2; bipolar; BRT; 50V; 0.1A; 300mW; R1: 10kΩ; R2: 10kΩ
Type of transistor: NPN x2
Polarisation: bipolar
Kind of transistor: BRT
Collector-emitter voltage: 50V
Collector current: 0.1A
Power dissipation: 0.3W
Case: SC88; SOT363; TSSOP6
Mounting: SMD
Kind of package: reel; tape
Frequency: 230MHz
Base resistor: 10kΩ
Base-emitter resistor: 10kΩ
Application: automotive industry
Produkt ist nicht verfügbar
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PUMH10,125 PUMH10.pdf
PUMH10,125
Hersteller: NEXPERIA
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; BRT; 50V; 0.1A; 300mW; SC88,SOT363,TSSOP6
Type of transistor: NPN
Polarisation: bipolar
Kind of transistor: BRT
Collector-emitter voltage: 50V
Collector current: 0.1A
Power dissipation: 0.3W
Case: SC88; SOT363; TSSOP6
Mounting: SMD
Kind of package: reel; tape
Base resistor: 2.2kΩ
Base-emitter resistor: 47kΩ
Produkt ist nicht verfügbar
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PUMH10Z PUMH10.pdf
PUMH10Z
Hersteller: NEXPERIA
Category: NPN SMD transistors
Description: Transistor: NPN x2; bipolar; BRT; 50V; 0.1A; 300mW; R1: 2.2kΩ
Type of transistor: NPN x2
Polarisation: bipolar
Kind of transistor: BRT
Collector-emitter voltage: 50V
Collector current: 0.1A
Power dissipation: 0.3W
Case: SC88; SOT363; TSSOP6
Mounting: SMD
Kind of package: reel; tape
Frequency: 230MHz
Base resistor: 2.2kΩ
Base-emitter resistor: 47kΩ
Produkt ist nicht verfügbar
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PUMH15-QX PUMH15-Q.pdf
PUMH15-QX
Hersteller: NEXPERIA
Category: NPN SMD transistors
Description: Transistor: NPN x2; bipolar; BRT; 50V; 0.1A; 300mW; R1: 4.7kΩ
Type of transistor: NPN x2
Polarisation: bipolar
Kind of transistor: BRT
Collector-emitter voltage: 50V
Collector current: 0.1A
Power dissipation: 0.3W
Case: SC88; SOT363; TSSOP6
Mounting: SMD
Kind of package: reel; tape
Frequency: 230MHz
Base resistor: 4.7kΩ
Base-emitter resistor: 4.7kΩ
Application: automotive industry
Produkt ist nicht verfügbar
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PUMH16,115 PEMH16_PUMH16.pdf
PUMH16,115
Hersteller: NEXPERIA
Category: NPN SMD transistors
Description: Transistor: NPN x2; bipolar; BRT; 50V; 0.1A; 300mW; R1: 22kΩ; R2: 47kΩ
Type of transistor: NPN x2
Polarisation: bipolar
Kind of transistor: BRT
Collector-emitter voltage: 50V
Collector current: 0.1A
Power dissipation: 0.3W
Case: SC88; SOT363; TSSOP6
Mounting: SMD
Kind of package: reel; tape
Frequency: 230MHz
Base resistor: 22kΩ
Base-emitter resistor: 47kΩ
Produkt ist nicht verfügbar
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PMST5551,115 PMST5551.pdf
PMST5551,115
Hersteller: NEXPERIA
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 160V; 0.3A; 200mW; SC70,SOT323
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 160V
Collector current: 0.3A
Power dissipation: 0.2W
Case: SC70; SOT323
Current gain: 250
Mounting: SMD
Kind of package: reel; tape
Frequency: 300MHz
auf Bestellung 2492 Stücke:
Lieferzeit 14-21 Tag (e)
AnzahlPrivatkunde
417+0.2 EUR
486+0.18 EUR
551+0.15 EUR
653+0.13 EUR
875+0.098 EUR
964+0.088 EUR
1053+0.081 EUR
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BAS16H,115 BAS16_SER.pdf
BAS16H,115
Hersteller: NEXPERIA
Category: SMD universal diodes
Description: Diode: switching; SMD; 100V; 215mA; 4ns; SOD123F; Ufmax: 1.25V
Type of diode: switching
Mounting: SMD
Max. off-state voltage: 0.1kV
Load current: 0.215A
Reverse recovery time: 4ns
Semiconductor structure: single diode
Case: SOD123F
Max. forward voltage: 1.25V
Max. forward impulse current: 4A
Kind of package: reel; tape
Features of semiconductor devices: fast switching
Produkt ist nicht verfügbar
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74HCT4046AD,118 74HCT4046AD,118.pdf
74HCT4046AD,118
Hersteller: NEXPERIA
Category: Other logic integrated circuits
Description: IC: digital; phase-locked loop; CMOS,TTL; 4.5÷5.5VDC; SMD; SO16
Kind of package: reel; tape
Mounting: SMD
Supply voltage: 4.5...5.5V DC
Type of integrated circuit: digital
Operating temperature: -40...125°C
Technology: CMOS; TTL
Case: SO16
Family: HCT
Kind of integrated circuit: phase-locked loop
auf Bestellung 409 Stücke:
Lieferzeit 14-21 Tag (e)
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55+1.57 EUR
72+1.19 EUR
100+1.06 EUR
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PBSS8110Z,135 PBSS8110Z.pdf
PBSS8110Z,135
Hersteller: NEXPERIA
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 100V; 1A; SC73,SOT223
Mounting: SMD
Frequency: 100MHz
Collector current: 1A
Collector-emitter voltage: 100V
Polarisation: bipolar
Type of transistor: NPN
Current gain: 80...500
Kind of package: reel; tape
Case: SC73; SOT223
Produkt ist nicht verfügbar
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PBSS8110X,135 PBSS8110X.pdf
PBSS8110X,135
Hersteller: NEXPERIA
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 100V; 1A; SC62,SOT89
Mounting: SMD
Frequency: 100MHz
Collector current: 1A
Collector-emitter voltage: 100V
Polarisation: bipolar
Type of transistor: NPN
Current gain: 80...500
Kind of package: reel; tape
Case: SC62; SOT89
Produkt ist nicht verfügbar
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PBSS8110T-QR PBSS8110T-Q.pdf
PBSS8110T-QR
Hersteller: NEXPERIA
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 100V; 1A; 0.48W; SOT23,TO236AB
Mounting: SMD
Frequency: 100MHz
Collector current: 1A
Collector-emitter voltage: 100V
Power dissipation: 0.48W
Polarisation: bipolar
Application: automotive industry
Type of transistor: NPN
Kind of package: 7 inch reel; tape
Case: SOT23; TO236AB
Produkt ist nicht verfügbar
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PBSS8110Y,115 PBSS8110Y.pdf
PBSS8110Y,115
Hersteller: NEXPERIA
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 100V; 1A; 625mW; SC88,SOT363,TSSOP6
Mounting: SMD
Frequency: 100MHz
Collector current: 1A
Collector-emitter voltage: 100V
Power dissipation: 0.625W
Polarisation: bipolar
Type of transistor: NPN
Current gain: 80...500
Kind of package: reel; tape
Case: SC88; SOT363; TSSOP6
Produkt ist nicht verfügbar
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PBSS5580PA,115 PBSS5580PA.pdf
Hersteller: NEXPERIA
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 80V; 4A; DFN2020-3,SOT1061
Mounting: SMD
Frequency: 110MHz
Collector current: 4A
Collector-emitter voltage: 80V
Polarisation: bipolar
Type of transistor: PNP
Current gain: 70...265
Kind of package: reel; tape
Case: DFN2020-3; SOT1061
Produkt ist nicht verfügbar
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74LVC1G08GM,132 74LVC1G08GM,132.pdf
Hersteller: NEXPERIA
Category: Gates, inverters
Description: IC: digital; AND; Ch: 1; IN: 2; CMOS,TTL; SMD; XSON6; Mini Logic; 4uA
Type of integrated circuit: digital
Kind of gate: AND
Number of channels: single; 1
Number of inputs: 2
Technology: CMOS; TTL
Mounting: SMD
Case: XSON6
Supply voltage: 1.65...5.5V DC
Operating temperature: -40...125°C
Kind of package: reel; tape
Quiescent current: 4µA
Family: LVC
Delay time: 10.5ns
Manufacturer series: Mini Logic
Produkt ist nicht verfügbar
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74LVC1G08GN,132 74LVC1G08GN,132.pdf
Hersteller: NEXPERIA
Category: Gates, inverters
Description: IC: digital; AND; Ch: 1; IN: 2; CMOS,TTL; SMD; XSON6; Mini Logic; LVC
Type of integrated circuit: digital
Kind of gate: AND
Number of channels: 1
Number of inputs: 2
Technology: CMOS; TTL
Mounting: SMD
Case: XSON6
Supply voltage: 1.65...5.5V DC
Operating temperature: -40...125°C
Kind of package: reel; tape
Family: LVC
Manufacturer series: Mini Logic
Produkt ist nicht verfügbar
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74LVC1G08GS,132 74LVC1G08GS,132.pdf
Hersteller: NEXPERIA
Category: Gates, inverters
Description: IC: digital; AND; Ch: 1; IN: 2; CMOS,TTL; SMD; XSON6; Mini Logic; 4uA
Type of integrated circuit: digital
Kind of gate: AND
Number of channels: single; 1
Number of inputs: 2
Technology: CMOS; TTL
Mounting: SMD
Case: XSON6
Supply voltage: 1.65...5.5V DC
Operating temperature: -40...125°C
Kind of package: reel; tape
Quiescent current: 4µA
Family: LVC
Delay time: 10.5ns
Manufacturer series: Mini Logic
Produkt ist nicht verfügbar
Mindestbestellmenge: 5000 Stücke
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HEF4027BT,653 HEF4027BT,653.pdf
HEF4027BT,653
Hersteller: NEXPERIA
Category: Flip-Flops
Description: IC: digital; JK flip-flop; Ch: 2; IN: 5; CMOS; SMD; SO16; HEF4000B
Operating temperature: -40...85°C
Type of integrated circuit: digital
Technology: CMOS
Trigger: negative-edge-triggered
Quiescent current: 120µA
Number of inputs: 5
Kind of package: reel; tape
Case: SO16
Family: HEF4000B
Kind of integrated circuit: JK flip-flop
Number of channels: 2
Mounting: SMD
Supply voltage: 3...15V DC
auf Bestellung 2558 Stücke:
Lieferzeit 14-21 Tag (e)
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105+0.82 EUR
133+0.64 EUR
197+0.43 EUR
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BAS116H,115 BAS116H.pdf
BAS116H,115
Hersteller: NEXPERIA
Category: SMD universal diodes
Description: Diode: switching; SMD; 75V; 215mA; 3us; SOD123F; Ufmax: 1.25V
Type of diode: switching
Mounting: SMD
Max. off-state voltage: 75V
Load current: 0.215A
Reverse recovery time: 3µs
Semiconductor structure: single diode
Case: SOD123F
Max. forward voltage: 1.25V
Max. forward impulse current: 4A
Kind of package: reel; tape
Features of semiconductor devices: fast switching
auf Bestellung 3 Stücke:
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3+28.37 EUR
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BAS116,215 BAS116.pdf
BAS116,215
Hersteller: NEXPERIA
Category: SMD universal diodes
Description: Diode: switching; SMD; 85V; 215mA; 3us; SOT23; Ufmax: 1.25V; Ifsm: 4A
Type of diode: switching
Mounting: SMD
Max. off-state voltage: 85V
Load current: 0.215A
Reverse recovery time: 3µs
Semiconductor structure: single diode
Case: SOT23
Max. forward voltage: 1.25V
Max. forward impulse current: 4A
Kind of package: reel; tape
Features of semiconductor devices: fast switching
Produkt ist nicht verfügbar
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BAS116GWX BAS116GW.pdf
BAS116GWX
Hersteller: NEXPERIA
Category: SMD universal diodes
Description: Diode: switching; SMD; 85V; 215mA; 3us; SOD123; Ufmax: 1.25V; Ifsm: 4A
Type of diode: switching
Mounting: SMD
Max. off-state voltage: 85V
Load current: 0.215A
Reverse recovery time: 3µs
Semiconductor structure: single diode
Capacitance: 2pF
Case: SOD123
Max. forward voltage: 1.25V
Max. forward impulse current: 4A
Leakage current: 80nA
Kind of package: reel; tape
Features of semiconductor devices: fast switching
Produkt ist nicht verfügbar
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BAS116LYL BAS116L.pdf
BAS116LYL
Hersteller: NEXPERIA
Category: SMD universal diodes
Description: Diode: switching; SMD; 85V; 325mA; 3us; DFN1006-2,SOD882; Ifsm: 4A
Type of diode: switching
Mounting: SMD
Max. off-state voltage: 85V
Load current: 325mA
Reverse recovery time: 3µs
Semiconductor structure: single diode
Case: DFN1006-2; SOD882
Max. forward voltage: 1.25V
Max. forward impulse current: 4A
Kind of package: reel; tape
Features of semiconductor devices: fast switching
Produkt ist nicht verfügbar
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PMBT3906,215 PMBT3906.215.pdf
PMBT3906,215
Hersteller: NEXPERIA
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 40V; 0.2A; 250mW; SOT23,TO236AB
Type of transistor: PNP
Polarisation: bipolar
Collector-emitter voltage: 40V
Collector current: 0.2A
Power dissipation: 0.25W
Case: SOT23; TO236AB
Mounting: SMD
Kind of package: 7 inch reel; tape
Frequency: 250MHz
auf Bestellung 4846 Stücke:
Lieferzeit 14-21 Tag (e)
AnzahlPrivatkunde
715+0.12 EUR
962+0.088 EUR
1087+0.079 EUR
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PMSS3906,115 PMSS3906.pdf
PMSS3906,115
Hersteller: NEXPERIA
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 40V; 0.1A; 200mW; SC70,SOT323
Case: SC70; SOT323
Mounting: SMD
Kind of package: reel; tape
Type of transistor: PNP
Collector current: 0.1A
Power dissipation: 0.2W
Current gain: 30...300
Collector-emitter voltage: 40V
Polarisation: bipolar
auf Bestellung 2858 Stücke:
Lieferzeit 14-21 Tag (e)
AnzahlPrivatkunde
334+0.25 EUR
625+0.13 EUR
962+0.088 EUR
1235+0.069 EUR
1352+0.063 EUR
1458+0.058 EUR
1534+0.056 EUR
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PMEG6020ER,115 PMEG6020ER.pdf
PMEG6020ER,115
Hersteller: NEXPERIA
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; CFP3,SOD123W; SMD; 60V; 2A; reel,tape
Type of diode: Schottky rectifying
Max. off-state voltage: 60V
Max. forward impulse current: 50A
Semiconductor structure: single diode
Case: CFP3; SOD123W
Mounting: SMD
Kind of package: reel; tape
Max. forward voltage: 0.53V
Load current: 2A
auf Bestellung 231058 Stücke:
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186+0.46 EUR
223+0.38 EUR
265+0.32 EUR
397+0.21 EUR
532+0.15 EUR
589+0.14 EUR
1000+0.13 EUR
Mindestbestellmenge: 186 Stücke
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PMEG6030EP,115 PMEG6030EP.pdf
PMEG6030EP,115
Hersteller: NEXPERIA
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; CFP5,SOD128; SMD; 60V; 3A; reel,tape
Type of diode: Schottky rectifying
Max. off-state voltage: 60V
Max. forward impulse current: 50A
Semiconductor structure: single diode
Case: CFP5; SOD128
Mounting: SMD
Load current: 3A
Kind of package: reel; tape
Max. forward voltage: 0.53V
auf Bestellung 63460 Stücke:
Lieferzeit 14-21 Tag (e)
AnzahlPrivatkunde
136+0.63 EUR
180+0.48 EUR
214+0.39 EUR
275+0.31 EUR
500+0.24 EUR
1000+0.23 EUR
Mindestbestellmenge: 136 Stücke
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PMEG10010ELRX PMEG10010ELR.pdf
PMEG10010ELRX
Hersteller: NEXPERIA
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; CFP3,SOD123W; SMD; 100V; 1.4A; 3.7ns
Type of diode: Schottky rectifying
Max. off-state voltage: 0.1kV
Max. forward impulse current: 50A
Semiconductor structure: single diode
Case: CFP3; SOD123W
Mounting: SMD
Kind of package: reel; tape
Max. forward voltage: 0.68V
Load current: 1.4A
Leakage current: 0.5mA
Capacitance: 28pF
Reverse recovery time: 3.7ns
auf Bestellung 199779 Stücke:
Lieferzeit 14-21 Tag (e)
AnzahlPrivatkunde
278+0.31 EUR
388+0.21 EUR
532+0.15 EUR
610+0.14 EUR
1000+0.12 EUR
3000+0.11 EUR
6000+0.1 EUR
Mindestbestellmenge: 278 Stücke
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NX2301P,215 NX2301P.pdf
NX2301P,215
Hersteller: NEXPERIA
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -20V; -2A; 400mW; SOT23,TO236AB
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -20V
Drain current: -2A
Power dissipation: 0.4W
Case: SOT23; TO236AB
Gate-source voltage: ±8V
On-state resistance: 0.27Ω
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
Gate charge: 6nC
auf Bestellung 1990 Stücke:
Lieferzeit 14-21 Tag (e)
AnzahlPrivatkunde
313+0.27 EUR
424+0.2 EUR
561+0.15 EUR
616+0.14 EUR
739+0.12 EUR
1000+0.1 EUR
Mindestbestellmenge: 313 Stücke
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BZV49-C3V9,115 BZV49-DTE.pdf
BZV49-C3V9,115
Hersteller: NEXPERIA
Category: SMD Zener diodes
Description: Diode: Zener; 1W; 3.9V; SMD; SOT89; Ifmax: 250mA; single diode
Case: SOT89
Mounting: SMD
Kind of package: reel; tape
Tolerance: ±5%
Max. load current: 0.25A
Semiconductor structure: single diode
Zener voltage: 3.9V
Type of diode: Zener
Max. forward voltage: 1V
Power dissipation: 1W
auf Bestellung 998 Stücke:
Lieferzeit 14-21 Tag (e)
AnzahlPrivatkunde
71+1.21 EUR
105+0.81 EUR
133+0.64 EUR
Mindestbestellmenge: 71 Stücke
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BZX884-B3V9,315 BZX884_SER.pdf
BZX884-B3V9,315
Hersteller: NEXPERIA
Category: SMD Zener diodes
Description: Diode: Zener; 0.25W; 3.9V; SMD; DFN1006-2,SOD882; Ifmax: 200mA
Case: DFN1006-2; SOD882
Mounting: SMD
Tolerance: ±2%
Max. forward voltage: 0.9V
Power dissipation: 0.25W
Max. load current: 0.2A
Kind of package: reel; tape
Semiconductor structure: single diode
Zener voltage: 3.9V
Type of diode: Zener
auf Bestellung 4680 Stücke:
Lieferzeit 14-21 Tag (e)
AnzahlPrivatkunde
385+0.23 EUR
491+0.18 EUR
575+0.14 EUR
Mindestbestellmenge: 385 Stücke
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