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74LVC1G10GW,125 74LVC1G10GW,125 NEXPERIA 74LVC1G10G-DTE.PDF Category: Gates, inverters
Description: IC: digital; NAND; Ch: 1; IN: 3; CMOS,TTL; SMD; SC88; Mini Logic; LVC
Type of integrated circuit: digital
Kind of gate: NAND
Technology: CMOS; TTL
Mounting: SMD
Case: SC88
Manufacturer series: Mini Logic
Supply voltage: 2...6V DC
Operating temperature: -40...125°C
Kind of package: reel; tape
Family: LVC
Number of channels: single; 1
Number of inputs: 3
auf Bestellung 2500 Stücke:
Lieferzeit 14-21 Tag (e)
556+0.13 EUR
820+0.087 EUR
940+0.076 EUR
1109+0.064 EUR
1223+0.058 EUR
1299+0.055 EUR
Mindestbestellmenge: 556
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74LVC1G126GW,125 74LVC1G126GW,125 NEXPERIA 74LVC1G126G-DTE.PDF Category: Buffers, transceivers, drivers
Description: IC: digital; buffer,non-inverting,line driver; Ch: 1; CMOS,TTL
Type of integrated circuit: digital
Kind of integrated circuit: buffer; line driver; non-inverting
Technology: CMOS; TTL
Mounting: SMD
Case: TSSOP5
Manufacturer series: Mini Logic
Supply voltage: 2...6V DC
Operating temperature: -40...125°C
Kind of package: reel; tape
Family: LVC
Number of channels: 1
Kind of output: 3-state
auf Bestellung 2855 Stücke:
Lieferzeit 14-21 Tag (e)
500+0.14 EUR
725+0.099 EUR
1097+0.065 EUR
1323+0.054 EUR
1389+0.051 EUR
1544+0.046 EUR
Mindestbestellmenge: 500
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BAS416,115 BAS416,115 NEXPERIA BAS416.115.pdf Category: SMD universal diodes
Description: Diode: switching; SMD; 85V; 200mA; 3us; SOD323; Ufmax: 1.25V; Ifsm: 4A
Type of diode: switching
Mounting: SMD
Max. off-state voltage: 85V
Load current: 0.2A
Reverse recovery time: 3µs
Semiconductor structure: single diode
Case: SOD323
Max. forward voltage: 1.25V
Max. load current: 0.5A
Max. forward impulse current: 4A
Kind of package: reel; tape
Produkt ist nicht verfügbar
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BAS86,115 BAS86,115 NEXPERIA BAS86.pdf Category: SMD Schottky diodes
Description: Diode: Schottky switching; MiniMELF; SMD; 50V; 0.2A; reel,tape
Type of diode: Schottky switching
Case: MiniMELF
Mounting: SMD
Max. off-state voltage: 50V
Load current: 0.2A
Semiconductor structure: single diode
Max. forward voltage: 0.9V
Max. forward impulse current: 5A
Kind of package: reel; tape
auf Bestellung 4161 Stücke:
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264+0.27 EUR
325+0.22 EUR
360+0.2 EUR
500+0.15 EUR
1000+0.13 EUR
2500+0.12 EUR
Mindestbestellmenge: 264
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BAV102,115 BAV102,115 NEXPERIA BAV102_BAV103.pdf Category: SMD universal diodes
Description: Diode: switching; SMD; 200V; 250mA; 50ns; SOD80; Ufmax: 1.25V; 400mW
Mounting: SMD
Kind of package: reel; tape
Features of semiconductor devices: fast switching
Case: SOD80
Semiconductor structure: single diode
Type of diode: switching
Reverse recovery time: 50ns
Load current: 0.25A
Power dissipation: 0.4W
Max. load current: 0.625A
Max. forward impulse current: 9A
Max. forward voltage: 1.25V
Max. off-state voltage: 200V
Produkt ist nicht verfügbar
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PDTD123ET,215 PDTD123ET,215 NEXPERIA PDTD123E_SER.pdf Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; BRT; 50V; 0.5A; 250mW; SOT23,TO236AB
Case: SOT23; TO236AB
Type of transistor: NPN
Mounting: SMD
Collector current: 0.5A
Power dissipation: 0.25W
Current gain: 40
Collector-emitter voltage: 50V
Base resistor: 2.2kΩ
Base-emitter resistor: 2.2kΩ
Kind of package: 7 inch reel; tape
Polarisation: bipolar
Kind of transistor: BRT
auf Bestellung 5200 Stücke:
Lieferzeit 14-21 Tag (e)
358+0.2 EUR
459+0.16 EUR
559+0.13 EUR
1036+0.069 EUR
1161+0.062 EUR
1378+0.052 EUR
1530+0.047 EUR
3000+0.043 EUR
Mindestbestellmenge: 358
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PDTB123ET,215 PDTB123ET,215 NEXPERIA PDTB123ET.pdf Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; BRT; 50V; 0.5A; 250mW; SOT23,TO236AB
Case: SOT23; TO236AB
Type of transistor: PNP
Mounting: SMD
Collector current: 0.5A
Power dissipation: 0.25W
Current gain: 40
Collector-emitter voltage: 50V
Base resistor: 2.2kΩ
Base-emitter resistor: 2.2kΩ
Kind of package: 7 inch reel; tape
Polarisation: bipolar
Kind of transistor: BRT
auf Bestellung 91 Stücke:
Lieferzeit 14-21 Tag (e)
91+0.79 EUR
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PDTB123TT,215 PDTB123TT,215 NEXPERIA PDTB123TT.pdf Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; BRT; 50V; 0.5A; 250mW; SOT23,TO236AB
Case: SOT23; TO236AB
Type of transistor: PNP
Mounting: SMD
Collector current: 0.5A
Power dissipation: 0.25W
Current gain: 100...250
Collector-emitter voltage: 50V
Base resistor: 2.2kΩ
Kind of package: 7 inch reel; tape
Polarisation: bipolar
Kind of transistor: BRT
auf Bestellung 2367 Stücke:
Lieferzeit 14-21 Tag (e)
358+0.2 EUR
569+0.13 EUR
878+0.082 EUR
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MMBZ33VCL,215 MMBZ33VCL,215 NEXPERIA MMBZxVCL_MMBZxVDL_SER.pdf Category: Protection diodes - arrays
Description: Diode: TVS array; 33V; 40W; unidirectional,double,common cathode
Type of diode: TVS array
Breakdown voltage: 33V
Peak pulse power dissipation: 40W
Semiconductor structure: common cathode; double; unidirectional
Mounting: SMD
Case: SOT23
Max. off-state voltage: 26V
Number of channels: 2
Application: automotive industry
Version: ESD
Leakage current: 5nA
auf Bestellung 2376 Stücke:
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250+0.29 EUR
329+0.22 EUR
388+0.18 EUR
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MMBZ33VAL,215 MMBZ33VAL,215 NEXPERIA MMBZxAL_SER.pdf Category: Protection diodes - arrays
Description: Diode: TVS array; 33V; 40W; unidirectional,double,common anode
Type of diode: TVS array
Breakdown voltage: 33V
Peak pulse power dissipation: 40W
Semiconductor structure: common anode; double; unidirectional
Mounting: SMD
Case: SOT23
Max. off-state voltage: 26V
Number of channels: 2
Application: automotive industry
Version: ESD
Leakage current: 5nA
auf Bestellung 20 Stücke:
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20+3.58 EUR
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BC807DSF BC807DSF NEXPERIA BC807DS.pdf Category: PNP SMD transistors
Description: Transistor: PNP x2; bipolar; 45V; 0.5A; 600mW; SC74,SOT457,TSOP6
Type of transistor: PNP x2
Polarisation: bipolar
Collector-emitter voltage: 45V
Collector current: 0.5A
Power dissipation: 0.6W
Case: SC74; SOT457; TSOP6
Pulsed collector current: 1A
Current gain: 40...400
Mounting: SMD
Kind of package: reel; tape
Frequency: 80MHz
Produkt ist nicht verfügbar
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74HC21D,653 74HC21D,653 NEXPERIA 74HC21D,653.pdf Category: Gates, inverters
Description: IC: digital; AND; Ch: 2; IN: 4; CMOS; SMD; SO14; 2÷6VDC; -40÷125°C; 40uA
Type of integrated circuit: digital
Number of channels: dual; 2
Technology: CMOS
Mounting: SMD
Case: SO14
Operating temperature: -40...125°C
Family: HC
Supply voltage: 2...6V DC
Kind of package: reel; tape
Quiescent current: 40µA
Number of inputs: 4
Kind of gate: AND
auf Bestellung 1872 Stücke:
Lieferzeit 14-21 Tag (e)
179+0.4 EUR
244+0.29 EUR
280+0.26 EUR
307+0.23 EUR
336+0.21 EUR
Mindestbestellmenge: 179
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74HC21DB,112 74HC21DB,112 NEXPERIA 74HC21.pdf Category: Gates, inverters
Description: IC: digital; AND; Ch: 2; IN: 4; CMOS; SMD; SSOP14; tube; HC
Type of integrated circuit: digital
Number of channels: dual; 2
Technology: CMOS
Mounting: SMD
Case: SSOP14
Family: HC
Kind of package: tube
Number of inputs: 4
Kind of gate: AND
auf Bestellung 41 Stücke:
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41+1.74 EUR
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BAS20,215 BAS20,215 NEXPERIA BAS19_20_21.pdf Category: SMD universal diodes
Description: Diode: switching; SMD; 200V; 200mA; 50ns; SOT23; Ufmax: 1.25V
Type of diode: switching
Mounting: SMD
Max. off-state voltage: 200V
Load current: 0.2A
Reverse recovery time: 50ns
Semiconductor structure: single diode
Features of semiconductor devices: fast switching
Case: SOT23
Max. forward voltage: 1.25V
Max. forward impulse current: 9A
Kind of package: reel; tape
auf Bestellung 4971 Stücke:
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715+0.1 EUR
1191+0.06 EUR
1421+0.05 EUR
1866+0.038 EUR
2526+0.028 EUR
2703+0.026 EUR
3068+0.023 EUR
Mindestbestellmenge: 715
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BAS20,235 BAS20,235 NEXPERIA BAS20.235.pdf Category: SMD universal diodes
Description: Diode: switching; SMD; 200V; 200mA; 50ns; SOT23; Ufmax: 1.25V
Type of diode: switching
Mounting: SMD
Max. off-state voltage: 200V
Load current: 0.2A
Reverse recovery time: 50ns
Semiconductor structure: single diode
Features of semiconductor devices: fast switching
Case: SOT23
Max. forward voltage: 1.25V
Max. forward impulse current: 9A
Kind of package: reel; tape
auf Bestellung 8617 Stücke:
Lieferzeit 14-21 Tag (e)
625+0.11 EUR
910+0.079 EUR
1583+0.045 EUR
2041+0.035 EUR
2284+0.031 EUR
2718+0.026 EUR
3013+0.024 EUR
3268+0.022 EUR
Mindestbestellmenge: 625
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74AHCT1G14GW,125 74AHCT1G14GW,125 NEXPERIA 74AHC1G14G-DTE.PDF Category: Gates, inverters
Description: IC: digital; NOT; Ch: 1; CMOS,TTL; SMD; TSSOP5; Mini Logic; -40÷125°C
Type of integrated circuit: digital
Kind of gate: NOT
Number of channels: single; 1
Technology: CMOS; TTL
Mounting: SMD
Case: TSSOP5
Manufacturer series: Mini Logic
Supply voltage: 4.5...5.5V DC
Operating temperature: -40...125°C
Kind of package: reel; tape
Kind of input: with Schmitt trigger
Family: AHCT
auf Bestellung 681 Stücke:
Lieferzeit 14-21 Tag (e)
625+0.11 EUR
681+0.1 EUR
Mindestbestellmenge: 625
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PZU14B2,115 PZU14B2,115 NEXPERIA PZUXB_SER.pdf Category: SMD Zener diodes
Description: Diode: Zener; 0.55W; 14V; SMD; SOD323F; reel,tape; Ifmax: 200mA
Mounting: SMD
Kind of package: reel; tape
Semiconductor structure: single diode
Case: SOD323F
Type of diode: Zener
Max. load current: 0.2A
Power dissipation: 0.55W
Max. forward voltage: 1.1V
Tolerance: ±2%
Zener voltage: 14V
auf Bestellung 407 Stücke:
Lieferzeit 14-21 Tag (e)
228+0.31 EUR
334+0.21 EUR
407+0.17 EUR
Mindestbestellmenge: 228
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74HCT541PW,118 74HCT541PW,118 NEXPERIA 74HCT541PW,118.pdf Category: Buffers, transceivers, drivers
Description: IC: digital; buffer,non-inverting,line driver; Ch: 8; CMOS,TTL
Type of integrated circuit: digital
Kind of integrated circuit: buffer; line driver; non-inverting
Number of channels: 8
Technology: CMOS; TTL
Mounting: SMD
Case: TSSOP20
Operating temperature: -40...125°C
Kind of package: reel; tape
Kind of output: 3-state
Supply voltage: 4.5...5.5V DC
Family: HCT
Quiescent current: 160µA
Produkt ist nicht verfügbar
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74VHCT541BQ,115 NEXPERIA 74VHC_VHCT541.pdf Category: Buffers, transceivers, drivers
Description: IC: digital; 3-state,8bit,buffer,octal,line driver; Ch: 1; IN: 10
Type of integrated circuit: digital
Kind of integrated circuit: 3-state; 8bit; buffer; line driver; octal
Number of channels: 1
Technology: TTL
Mounting: SMD
Case: DHVQFN20
Operating temperature: -40...125°C
Kind of package: reel; tape
Kind of output: 3-state
Supply voltage: 4.5...5.5V DC
Family: VHCT
Number of inputs: 10
Produkt ist nicht verfügbar
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74VHCT541D,118 NEXPERIA 74VHC_VHCT541.pdf Category: Buffers, transceivers, drivers
Description: IC: digital; 3-state,8bit,buffer,octal,line driver; Ch: 1; IN: 10
Type of integrated circuit: digital
Kind of integrated circuit: 3-state; 8bit; buffer; line driver; octal
Number of channels: 1
Technology: TTL
Mounting: SMD
Case: SO20
Operating temperature: -40...125°C
Kind of package: reel; tape
Kind of output: 3-state
Supply voltage: 4.5...5.5V DC
Family: VHCT
Number of inputs: 10
Produkt ist nicht verfügbar
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74VHCT541PW,118 NEXPERIA 74VHC_VHCT541.pdf Category: Buffers, transceivers, drivers
Description: IC: digital; 3-state,8bit,buffer,octal,line driver; Ch: 1; IN: 10
Type of integrated circuit: digital
Kind of integrated circuit: 3-state; 8bit; buffer; line driver; octal
Number of channels: 1
Technology: TTL
Mounting: SMD
Case: TSSOP20
Operating temperature: -40...125°C
Kind of package: reel; tape
Kind of output: 3-state
Supply voltage: 4.5...5.5V DC
Family: VHCT
Number of inputs: 10
Produkt ist nicht verfügbar
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PSMN2R1-40PLQ PSMN2R1-40PLQ NEXPERIA PSMN2R1-40PL.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 150A; Idm: 1075A; 293W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 150A
Pulsed drain current: 1075A
Power dissipation: 293W
Case: SOT78; TO220AB
Gate-source voltage: ±20V
On-state resistance: 2.2mΩ
Mounting: THT
Gate charge: 168.9nC
Kind of package: tube
Kind of channel: enhancement
Produkt ist nicht verfügbar
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PSMN2R8-40PS,127 PSMN2R8-40PS,127 NEXPERIA PSMN2R8-40PS.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 100A; Idm: 797A; 211W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 100A
Pulsed drain current: 797A
Power dissipation: 211W
Case: SOT78; TO220AB
Gate-source voltage: ±20V
On-state resistance: 2.3mΩ
Mounting: THT
Gate charge: 71nC
Kind of package: tube
Kind of channel: enhancement
Produkt ist nicht verfügbar
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PSMN2R6-40YS,115 PSMN2R6-40YS,115 NEXPERIA PSMN2R6-40YS.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 100A; 131W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 100A
Power dissipation: 131W
Case: LFPAK56; PowerSO8; SOT669
Gate-source voltage: ±20V
On-state resistance: 5.3mΩ
Mounting: SMD
Gate charge: 63nC
Kind of package: reel; tape
Kind of channel: enhancement
Produkt ist nicht verfügbar
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PSMN2R2-40PS,127 PSMN2R2-40PS,127 NEXPERIA PSMN2R2-40PS.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 100A; 306W; SOT78,TO220AB
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 100A
Power dissipation: 306W
Case: SOT78; TO220AB
Gate-source voltage: ±20V
On-state resistance: 3.9mΩ
Mounting: THT
Gate charge: 110nC
Kind of package: tube
Kind of channel: enhancement
Produkt ist nicht verfügbar
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PSMN2R0-60PS,127 PSMN2R0-60PS,127 NEXPERIA PSMN2R0-60PS.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 120A; 338W; SOT78,TO220AB
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 120A
Power dissipation: 338W
Case: SOT78; TO220AB
Gate-source voltage: ±20V
On-state resistance: 5.1mΩ
Mounting: THT
Gate charge: 192nC
Kind of package: tube
Kind of channel: enhancement
Produkt ist nicht verfügbar
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PSMN2R5-60PLQ PSMN2R5-60PLQ NEXPERIA PSMN2R5-60PL.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 150A; Idm: 1002A; 349W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 150A
Pulsed drain current: 1002A
Power dissipation: 349W
Case: SOT78; TO220AB
Gate-source voltage: ±20V
On-state resistance: 2.3mΩ
Mounting: THT
Gate charge: 223nC
Kind of package: tube
Kind of channel: enhancement
Produkt ist nicht verfügbar
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PSMN2R8-40YSDX NEXPERIA PSMN2R8-40YSD.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; NextPowerS3; unipolar; 40V; 119A; Idm: 658A
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 119A
Pulsed drain current: 658A
Power dissipation: 147W
Case: LFPAK56; PowerSO8; SOT669
Gate-source voltage: ±20V
On-state resistance: 5.4mΩ
Mounting: SMD
Gate charge: 62nC
Kind of package: reel; tape
Kind of channel: enhancement
Technology: NextPowerS3
Produkt ist nicht verfügbar
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PSMN2R4-30MLDX NEXPERIA PSMN2R4-30MLD.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; NextPowerS3; unipolar; 30V; 70A; Idm: 580A
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 70A
Pulsed drain current: 580A
Power dissipation: 91W
Case: LFPAK33; SOT1210
Gate-source voltage: ±20V
On-state resistance: 5.3mΩ
Mounting: SMD
Gate charge: 51nC
Kind of package: reel; tape
Kind of channel: enhancement
Features of semiconductor devices: logic level
Technology: NextPowerS3
Produkt ist nicht verfügbar
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PSMN2R0-100SSFJ NEXPERIA PSMN2R0-100SSF.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 189A; Idm: 1070A; 341W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 189A
Pulsed drain current: 1070A
Power dissipation: 341W
Case: LFPAK88; SOT1235
Gate-source voltage: ±20V
On-state resistance: 4.8mΩ
Mounting: SMD
Gate charge: 242nC
Kind of package: reel; tape
Kind of channel: enhancement
Produkt ist nicht verfügbar
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PSMN2R8-80BS,118 NEXPERIA PSMN2R8-80BS.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 80V; 120A; Idm: 824A; 306W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 80V
Drain current: 120A
Pulsed drain current: 824A
Power dissipation: 306W
Case: D2PAK; SOT404
Gate-source voltage: ±20V
On-state resistance: 6.12mΩ
Mounting: SMD
Gate charge: 139nC
Kind of package: reel; tape
Kind of channel: enhancement
Produkt ist nicht verfügbar
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PSMN2R0-25MLDX NEXPERIA PSMN2R0-25MLD.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; NextPowerS3; unipolar; 25V; 70A; Idm: 555A
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 25V
Drain current: 70A
Pulsed drain current: 555A
Power dissipation: 74W
Case: LFPAK33; SOT1210
Gate-source voltage: ±20V
On-state resistance: 5.2mΩ
Mounting: SMD
Gate charge: 34.4nC
Kind of package: reel; tape
Kind of channel: enhancement
Technology: NextPowerS3
Produkt ist nicht verfügbar
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PSMN2R0-60PSRQ NEXPERIA PSMN2R0-60PSR.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; NextPowerS3; unipolar; 60V; 120A; Idm: 1135A
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 120A
Pulsed drain current: 1135A
Power dissipation: 338W
Case: SOT78; TO220AB
Gate-source voltage: ±20V
On-state resistance: 5.1mΩ
Mounting: THT
Gate charge: 192nC
Kind of channel: enhancement
Technology: NextPowerS3
Produkt ist nicht verfügbar
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PSMN2R2-40YSDX NEXPERIA PSMN2R2-40YSD.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; NextPowerS3; unipolar; 40V; 140A; Idm: 789A
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 140A
Pulsed drain current: 789A
Power dissipation: 166W
Case: LFPAK56; PowerSO8; SOT669
Gate-source voltage: ±20V
On-state resistance: 4.3mΩ
Mounting: SMD
Gate charge: 63nC
Kind of package: reel; tape
Kind of channel: enhancement
Technology: NextPowerS3
Produkt ist nicht verfügbar
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PSMN2R7-30BL,118 NEXPERIA PSMN2R7-30BL.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 100A; Idm: 730A; 170W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 100A
Pulsed drain current: 730A
Power dissipation: 170W
Case: D2PAK; SOT404
Gate-source voltage: ±20V
On-state resistance: 3.6mΩ
Mounting: SMD
Gate charge: 32nC
Kind of package: reel; tape
Kind of channel: enhancement
Produkt ist nicht verfügbar
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PSMN2R8-25MLC,115 NEXPERIA PSMN2R8-25MLC.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 25V; 70A; Idm: 536A; 88W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 25V
Drain current: 70A
Pulsed drain current: 536A
Power dissipation: 88W
Case: LFPAK33; SOT1210
Gate-source voltage: ±20V
On-state resistance: 3.25mΩ
Mounting: SMD
Gate charge: 16.3nC
Kind of package: reel; tape
Kind of channel: enhancement
Produkt ist nicht verfügbar
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PSMN2R0-25YLDX NEXPERIA PSMN2R0-25YLD.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; NextPowerS3; unipolar; 25V; 127A; Idm: 722A
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 25V
Drain current: 127A
Pulsed drain current: 722A
Power dissipation: 115W
Case: LFPAK56; PowerSO8; SOT669
Gate-source voltage: ±20V
On-state resistance: 4.95mΩ
Mounting: SMD
Gate charge: 34.1nC
Kind of package: reel; tape
Kind of channel: enhancement
Technology: NextPowerS3
Produkt ist nicht verfügbar
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PSMN2R0-30YL,115 NEXPERIA PSMN2R0-30YL.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 100A; Idm: 667A; 97W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 100A
Pulsed drain current: 667A
Power dissipation: 97W
Case: LFPAK56; PowerSO8; SOT669
Gate-source voltage: ±20V
On-state resistance: 1.55mΩ
Mounting: SMD
Gate charge: 30nC
Kind of package: reel; tape
Kind of channel: enhancement
Produkt ist nicht verfügbar
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PSMN2R0-30YLDX NEXPERIA PSMN2R0-30YLD.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; NextPowerS3; unipolar; 30V; 100A; Idm: 793A
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 100A
Pulsed drain current: 793A
Power dissipation: 142W
Case: LFPAK56; PowerSO8; SOT669
Gate-source voltage: ±20V
On-state resistance: 4.2mΩ
Mounting: SMD
Gate charge: 46nC
Kind of package: reel; tape
Kind of channel: enhancement
Technology: NextPowerS3
Produkt ist nicht verfügbar
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PSMN2R0-40YLDX NEXPERIA PSMN2R0-40YLD.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; NextPowerS3; unipolar; 40V; 143A; Idm: 807A
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 143A
Pulsed drain current: 807A
Power dissipation: 166W
Case: LFPAK56; PowerSO8; SOT669
Gate-source voltage: ±20V
On-state resistance: 5.2mΩ
Mounting: SMD
Gate charge: 92nC
Kind of package: reel; tape
Kind of channel: enhancement
Technology: NextPowerS3
Produkt ist nicht verfügbar
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PSMN2R2-25YLC,115 PSMN2R2-25YLC,115 NEXPERIA PSMN2R2-25YLC.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 25V; 100A; 106W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 25V
Drain current: 100A
Power dissipation: 106W
Case: LFPAK56; PowerSO8; SOT669
Gate-source voltage: ±20V
On-state resistance: 5.05mΩ
Mounting: SMD
Gate charge: 39nC
Kind of package: reel; tape
Kind of channel: enhancement
Produkt ist nicht verfügbar
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PSMN2R2-40BS,118 NEXPERIA PHGLS24325-1.pdf?t.download=true&u=5oefqw Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 100A; Idm: 962A; 306W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 100A
Pulsed drain current: 962A
Power dissipation: 306W
Case: D2PAK; SOT404
Gate-source voltage: ±20V
On-state resistance: 3.76mΩ
Mounting: SMD
Gate charge: 130nC
Kind of package: reel; tape
Kind of channel: enhancement
Produkt ist nicht verfügbar
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PSMN2R5-30YL,115 NEXPERIA PSMN2R5-30YL.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 100A; Idm: 580A; 88W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 100A
Pulsed drain current: 580A
Power dissipation: 88W
Case: LFPAK56; PowerSO8; SOT669
Gate-source voltage: ±20V
On-state resistance: 2.47mΩ
Mounting: SMD
Gate charge: 57nC
Kind of package: reel; tape
Kind of channel: enhancement
Produkt ist nicht verfügbar
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PSMN2R5-40YLDX NEXPERIA PSMN2R5-40YLD.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; NextPowerS3; unipolar; 40V; 121A; Idm: 682A
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 121A
Pulsed drain current: 682A
Power dissipation: 147W
Case: LFPAK56; PowerSO8; SOT669
Gate-source voltage: ±20V
On-state resistance: 6.4mΩ
Mounting: SMD
Gate charge: 78nC
Kind of package: reel; tape
Kind of channel: enhancement
Technology: NextPowerS3
Produkt ist nicht verfügbar
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PSMN2R6-30YLC,115 NEXPERIA PSMN2R6-30YLC.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 100A; Idm: 575A; 106W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 100A
Pulsed drain current: 575A
Power dissipation: 106W
Case: LFPAK56; PowerSO8; SOT669
Gate-source voltage: ±20V
On-state resistance: 2.35mΩ
Mounting: SMD
Gate charge: 18nC
Kind of package: reel; tape
Kind of channel: enhancement
Produkt ist nicht verfügbar
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PSMN2R6-60PSQ PSMN2R6-60PSQ NEXPERIA PSMN2R6-60PS.pdf PHGL-S-A0001060194-1.pdf?t.download=true&u=5oefqw Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 150A; Idm: 961A; 326W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 150A
Pulsed drain current: 961A
Power dissipation: 326W
Case: SOT78; TO220AB
Gate-source voltage: ±20V
On-state resistance: 5.6mΩ
Mounting: THT
Gate charge: 0.14µC
Kind of package: tube
Kind of channel: enhancement
Produkt ist nicht verfügbar
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PSMN2R9-25YLC,115 NEXPERIA PSMN2R9-25YLC.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 25V; 100A; Idm: 517A; 92W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 25V
Drain current: 100A
Pulsed drain current: 517A
Power dissipation: 92W
Case: LFPAK56; PowerSO8; SOT669
Gate-source voltage: ±20V
On-state resistance: 3.45mΩ
Mounting: SMD
Gate charge: 33nC
Kind of package: reel; tape
Kind of channel: enhancement
Produkt ist nicht verfügbar
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PMBTA56,215 PMBTA56,215 NEXPERIA PMBTA56.pdf Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 80V; 0.5A; 250mW; SOT23,TO236AB
Type of transistor: PNP
Polarisation: bipolar
Collector-emitter voltage: 80V
Collector current: 0.5A
Power dissipation: 0.25W
Case: SOT23; TO236AB
Mounting: SMD
Kind of package: 7 inch reel; tape
Pulsed collector current: 1A
Produkt ist nicht verfügbar
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PMBTA56-QR PMBTA56-QR NEXPERIA PMBTA56-Q.pdf Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 80V; 0.5A; 250mW; SOT23,TO236AB
Type of transistor: PNP
Polarisation: bipolar
Collector-emitter voltage: 80V
Collector current: 0.5A
Power dissipation: 0.25W
Case: SOT23; TO236AB
Current gain: 100
Mounting: SMD
Kind of package: 7 inch reel; tape
Application: automotive industry
Produkt ist nicht verfügbar
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PUMB20,115 PUMB20,115 NEXPERIA PEMB20_PUMB20.pdf Category: PNP SMD transistors
Description: Transistor: PNP x2; bipolar; BRT; 50V; 0.1A; 300mW; R1: 2.2kΩ
Mounting: SMD
Kind of package: reel; tape
Collector current: 0.1A
Type of transistor: PNP x2
Power dissipation: 0.3W
Kind of transistor: BRT
Polarisation: bipolar
Collector-emitter voltage: 50V
Base resistor: 2.2kΩ
Base-emitter resistor: 2.2kΩ
Case: SC88; SOT363; TSSOP6
Frequency: 180MHz
auf Bestellung 50 Stücke:
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50+1.43 EUR
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PUMB30,115 PUMB30,115 NEXPERIA PEMB30_PUMB30.pdf Category: PNP SMD transistors
Description: Transistor: PNP x2; bipolar; BRT; 50V; 0.1A; 300mW; 2.2kΩ
Mounting: SMD
Kind of package: reel; tape
Collector current: 0.1A
Type of transistor: PNP x2
Power dissipation: 0.3W
Kind of transistor: BRT
Polarisation: bipolar
Collector-emitter voltage: 50V
Base resistor: 2.2kΩ
Case: SC88; SOT363; TSSOP6
Frequency: 180MHz
auf Bestellung 160 Stücke:
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74LVC2T45GN,115 NEXPERIA 74LVC_LVCH2T45.pdf Category: Level translators
Description: IC: digital; 2bit,3-state,transceiver,translator; Ch: 1; CMOS,TTL
Type of integrated circuit: digital
Kind of integrated circuit: 2bit; 3-state; transceiver; translator
Number of channels: 1
Technology: CMOS; TTL
Supply voltage: 1.2...5.5V DC
Mounting: SMD
Case: XSON8
Operating temperature: -40...125°C
Kind of package: reel; tape
Kind of output: 3-state
Family: LVC
Produkt ist nicht verfügbar
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74LVC2T45GS-Q100X NEXPERIA 74LVC_LVCH2T45_Q100.pdf Category: Level translators
Description: IC: digital; 2bit,3-state,bidirectional,transceiver,translator
Type of integrated circuit: digital
Kind of integrated circuit: 2bit; 3-state; bidirectional; transceiver; translator
Number of channels: 2
Technology: CMOS
Supply voltage: 1.2...5.5V DC
Mounting: SMD
Case: XSON8
Operating temperature: -40...125°C
Kind of package: reel; tape
Family: LVC
Produkt ist nicht verfügbar
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74LVC2T45GS,115 NEXPERIA 74LVC_LVCH2T45.pdf Category: Level translators
Description: IC: digital; 2bit,3-state,transceiver,translator; Ch: 1; CMOS,TTL
Type of integrated circuit: digital
Kind of integrated circuit: 2bit; 3-state; transceiver; translator
Number of channels: 1
Technology: CMOS; TTL
Supply voltage: 1.2...5.5V DC
Mounting: SMD
Case: XSON8
Operating temperature: -40...125°C
Kind of package: reel; tape
Kind of output: 3-state
Family: LVC
Produkt ist nicht verfügbar
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74LVC2T45GT-Q100X NEXPERIA 74LVC_LVCH2T45_Q100.pdf Category: Level translators
Description: IC: digital; 2bit,3-state,bidirectional,transceiver,translator
Type of integrated circuit: digital
Kind of integrated circuit: 2bit; 3-state; bidirectional; transceiver; translator
Number of channels: 2
Technology: CMOS
Supply voltage: 1.2...5.5V DC
Mounting: SMD
Case: XSON8
Operating temperature: -40...125°C
Kind of package: reel; tape
Family: LVC
Produkt ist nicht verfügbar
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74LVC2T45GT,115 NEXPERIA 74LVC_LVCH2T45.pdf Category: Level translators
Description: IC: digital; 2bit,3-state,transceiver,translator; Ch: 1; CMOS,TTL
Type of integrated circuit: digital
Kind of integrated circuit: 2bit; 3-state; transceiver; translator
Number of channels: 1
Technology: CMOS; TTL
Supply voltage: 1.2...5.5V DC
Mounting: SMD
Case: XSON8
Operating temperature: -40...125°C
Kind of package: reel; tape
Kind of output: 3-state
Family: LVC
Produkt ist nicht verfügbar
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74LVC74AD,118 74LVC74AD,118 NEXPERIA 74LVC74AD,118.pdf Category: Flip-Flops
Description: IC: digital; D flip-flop; Ch: 2; CMOS,TTL; SMD; SO14; LVC; reel,tape
Type of integrated circuit: digital
Kind of integrated circuit: D flip-flop
Number of channels: 2
Technology: CMOS; TTL
Mounting: SMD
Case: SO14
Operating temperature: -40...125°C
Family: LVC
Supply voltage: 1.2...3.6V DC
Kind of package: reel; tape
Trigger: positive-edge-triggered
Produkt ist nicht verfügbar
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74LVC74ABQ,115 NEXPERIA 74LVC74ABQ,115.pdf Category: Flip-Flops
Description: IC: digital; D flip-flop; Ch: 2; CMOS,TTL; SMD; DHVQFN14; LVC
Type of integrated circuit: digital
Kind of integrated circuit: D flip-flop
Number of channels: 2
Technology: CMOS; TTL
Mounting: SMD
Case: DHVQFN14
Operating temperature: -40...125°C
Family: LVC
Supply voltage: 1.2...3.6V DC
Kind of package: reel; tape
Trigger: positive-edge-triggered
Produkt ist nicht verfügbar
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74LVC74APW,118 74LVC74APW,118 NEXPERIA 74LVC74APW,118.pdf Category: Flip-Flops
Description: IC: digital; D flip-flop; Ch: 2; CMOS,TTL; SMD; TSSOP14; LVC
Type of integrated circuit: digital
Kind of integrated circuit: D flip-flop
Number of channels: 2
Technology: CMOS; TTL
Mounting: SMD
Case: TSSOP14
Operating temperature: -40...125°C
Family: LVC
Supply voltage: 1.2...3.6V DC
Kind of package: reel; tape
Trigger: positive-edge-triggered
Produkt ist nicht verfügbar
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74AHCT14D.112 74AHCT14D.112 NEXPERIA 74AHCT14D.pdf Category: Gates, inverters
Description: IC: digital; NOT; Ch: 6; CMOS,TTL; SMD; SO14; AHCT; tube
Type of integrated circuit: digital
Kind of gate: NOT
Number of channels: hex; 6
Mounting: SMD
Case: SO14
Kind of input: with Schmitt trigger
Kind of package: tube
Technology: CMOS; TTL
Manufacturer series: AHCT
Produkt ist nicht verfügbar
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74LVC1G10GW,125 74LVC1G10G-DTE.PDF
74LVC1G10GW,125
Hersteller: NEXPERIA
Category: Gates, inverters
Description: IC: digital; NAND; Ch: 1; IN: 3; CMOS,TTL; SMD; SC88; Mini Logic; LVC
Type of integrated circuit: digital
Kind of gate: NAND
Technology: CMOS; TTL
Mounting: SMD
Case: SC88
Manufacturer series: Mini Logic
Supply voltage: 2...6V DC
Operating temperature: -40...125°C
Kind of package: reel; tape
Family: LVC
Number of channels: single; 1
Number of inputs: 3
auf Bestellung 2500 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
556+0.13 EUR
820+0.087 EUR
940+0.076 EUR
1109+0.064 EUR
1223+0.058 EUR
1299+0.055 EUR
Mindestbestellmenge: 556
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74LVC1G126GW,125 74LVC1G126G-DTE.PDF
74LVC1G126GW,125
Hersteller: NEXPERIA
Category: Buffers, transceivers, drivers
Description: IC: digital; buffer,non-inverting,line driver; Ch: 1; CMOS,TTL
Type of integrated circuit: digital
Kind of integrated circuit: buffer; line driver; non-inverting
Technology: CMOS; TTL
Mounting: SMD
Case: TSSOP5
Manufacturer series: Mini Logic
Supply voltage: 2...6V DC
Operating temperature: -40...125°C
Kind of package: reel; tape
Family: LVC
Number of channels: 1
Kind of output: 3-state
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500+0.14 EUR
725+0.099 EUR
1097+0.065 EUR
1323+0.054 EUR
1389+0.051 EUR
1544+0.046 EUR
Mindestbestellmenge: 500
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BAS416,115 BAS416.115.pdf
BAS416,115
Hersteller: NEXPERIA
Category: SMD universal diodes
Description: Diode: switching; SMD; 85V; 200mA; 3us; SOD323; Ufmax: 1.25V; Ifsm: 4A
Type of diode: switching
Mounting: SMD
Max. off-state voltage: 85V
Load current: 0.2A
Reverse recovery time: 3µs
Semiconductor structure: single diode
Case: SOD323
Max. forward voltage: 1.25V
Max. load current: 0.5A
Max. forward impulse current: 4A
Kind of package: reel; tape
Produkt ist nicht verfügbar
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BAS86,115 BAS86.pdf
BAS86,115
Hersteller: NEXPERIA
Category: SMD Schottky diodes
Description: Diode: Schottky switching; MiniMELF; SMD; 50V; 0.2A; reel,tape
Type of diode: Schottky switching
Case: MiniMELF
Mounting: SMD
Max. off-state voltage: 50V
Load current: 0.2A
Semiconductor structure: single diode
Max. forward voltage: 0.9V
Max. forward impulse current: 5A
Kind of package: reel; tape
auf Bestellung 4161 Stücke:
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Anzahl Preis
264+0.27 EUR
325+0.22 EUR
360+0.2 EUR
500+0.15 EUR
1000+0.13 EUR
2500+0.12 EUR
Mindestbestellmenge: 264
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BAV102,115 BAV102_BAV103.pdf
BAV102,115
Hersteller: NEXPERIA
Category: SMD universal diodes
Description: Diode: switching; SMD; 200V; 250mA; 50ns; SOD80; Ufmax: 1.25V; 400mW
Mounting: SMD
Kind of package: reel; tape
Features of semiconductor devices: fast switching
Case: SOD80
Semiconductor structure: single diode
Type of diode: switching
Reverse recovery time: 50ns
Load current: 0.25A
Power dissipation: 0.4W
Max. load current: 0.625A
Max. forward impulse current: 9A
Max. forward voltage: 1.25V
Max. off-state voltage: 200V
Produkt ist nicht verfügbar
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PDTD123ET,215 PDTD123E_SER.pdf
PDTD123ET,215
Hersteller: NEXPERIA
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; BRT; 50V; 0.5A; 250mW; SOT23,TO236AB
Case: SOT23; TO236AB
Type of transistor: NPN
Mounting: SMD
Collector current: 0.5A
Power dissipation: 0.25W
Current gain: 40
Collector-emitter voltage: 50V
Base resistor: 2.2kΩ
Base-emitter resistor: 2.2kΩ
Kind of package: 7 inch reel; tape
Polarisation: bipolar
Kind of transistor: BRT
auf Bestellung 5200 Stücke:
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Anzahl Preis
358+0.2 EUR
459+0.16 EUR
559+0.13 EUR
1036+0.069 EUR
1161+0.062 EUR
1378+0.052 EUR
1530+0.047 EUR
3000+0.043 EUR
Mindestbestellmenge: 358
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PDTB123ET,215 PDTB123ET.pdf
PDTB123ET,215
Hersteller: NEXPERIA
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; BRT; 50V; 0.5A; 250mW; SOT23,TO236AB
Case: SOT23; TO236AB
Type of transistor: PNP
Mounting: SMD
Collector current: 0.5A
Power dissipation: 0.25W
Current gain: 40
Collector-emitter voltage: 50V
Base resistor: 2.2kΩ
Base-emitter resistor: 2.2kΩ
Kind of package: 7 inch reel; tape
Polarisation: bipolar
Kind of transistor: BRT
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91+0.79 EUR
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PDTB123TT,215 PDTB123TT.pdf
PDTB123TT,215
Hersteller: NEXPERIA
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; BRT; 50V; 0.5A; 250mW; SOT23,TO236AB
Case: SOT23; TO236AB
Type of transistor: PNP
Mounting: SMD
Collector current: 0.5A
Power dissipation: 0.25W
Current gain: 100...250
Collector-emitter voltage: 50V
Base resistor: 2.2kΩ
Kind of package: 7 inch reel; tape
Polarisation: bipolar
Kind of transistor: BRT
auf Bestellung 2367 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
358+0.2 EUR
569+0.13 EUR
878+0.082 EUR
Mindestbestellmenge: 358
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MMBZ33VCL,215 MMBZxVCL_MMBZxVDL_SER.pdf
MMBZ33VCL,215
Hersteller: NEXPERIA
Category: Protection diodes - arrays
Description: Diode: TVS array; 33V; 40W; unidirectional,double,common cathode
Type of diode: TVS array
Breakdown voltage: 33V
Peak pulse power dissipation: 40W
Semiconductor structure: common cathode; double; unidirectional
Mounting: SMD
Case: SOT23
Max. off-state voltage: 26V
Number of channels: 2
Application: automotive industry
Version: ESD
Leakage current: 5nA
auf Bestellung 2376 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
250+0.29 EUR
329+0.22 EUR
388+0.18 EUR
Mindestbestellmenge: 250
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MMBZ33VAL,215 MMBZxAL_SER.pdf
MMBZ33VAL,215
Hersteller: NEXPERIA
Category: Protection diodes - arrays
Description: Diode: TVS array; 33V; 40W; unidirectional,double,common anode
Type of diode: TVS array
Breakdown voltage: 33V
Peak pulse power dissipation: 40W
Semiconductor structure: common anode; double; unidirectional
Mounting: SMD
Case: SOT23
Max. off-state voltage: 26V
Number of channels: 2
Application: automotive industry
Version: ESD
Leakage current: 5nA
auf Bestellung 20 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
20+3.58 EUR
Mindestbestellmenge: 20
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BC807DSF BC807DS.pdf
BC807DSF
Hersteller: NEXPERIA
Category: PNP SMD transistors
Description: Transistor: PNP x2; bipolar; 45V; 0.5A; 600mW; SC74,SOT457,TSOP6
Type of transistor: PNP x2
Polarisation: bipolar
Collector-emitter voltage: 45V
Collector current: 0.5A
Power dissipation: 0.6W
Case: SC74; SOT457; TSOP6
Pulsed collector current: 1A
Current gain: 40...400
Mounting: SMD
Kind of package: reel; tape
Frequency: 80MHz
Produkt ist nicht verfügbar
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74HC21D,653 74HC21D,653.pdf
74HC21D,653
Hersteller: NEXPERIA
Category: Gates, inverters
Description: IC: digital; AND; Ch: 2; IN: 4; CMOS; SMD; SO14; 2÷6VDC; -40÷125°C; 40uA
Type of integrated circuit: digital
Number of channels: dual; 2
Technology: CMOS
Mounting: SMD
Case: SO14
Operating temperature: -40...125°C
Family: HC
Supply voltage: 2...6V DC
Kind of package: reel; tape
Quiescent current: 40µA
Number of inputs: 4
Kind of gate: AND
auf Bestellung 1872 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
179+0.4 EUR
244+0.29 EUR
280+0.26 EUR
307+0.23 EUR
336+0.21 EUR
Mindestbestellmenge: 179
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74HC21DB,112 74HC21.pdf
74HC21DB,112
Hersteller: NEXPERIA
Category: Gates, inverters
Description: IC: digital; AND; Ch: 2; IN: 4; CMOS; SMD; SSOP14; tube; HC
Type of integrated circuit: digital
Number of channels: dual; 2
Technology: CMOS
Mounting: SMD
Case: SSOP14
Family: HC
Kind of package: tube
Number of inputs: 4
Kind of gate: AND
auf Bestellung 41 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
41+1.74 EUR
Mindestbestellmenge: 41
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BAS20,215 BAS19_20_21.pdf
BAS20,215
Hersteller: NEXPERIA
Category: SMD universal diodes
Description: Diode: switching; SMD; 200V; 200mA; 50ns; SOT23; Ufmax: 1.25V
Type of diode: switching
Mounting: SMD
Max. off-state voltage: 200V
Load current: 0.2A
Reverse recovery time: 50ns
Semiconductor structure: single diode
Features of semiconductor devices: fast switching
Case: SOT23
Max. forward voltage: 1.25V
Max. forward impulse current: 9A
Kind of package: reel; tape
auf Bestellung 4971 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
715+0.1 EUR
1191+0.06 EUR
1421+0.05 EUR
1866+0.038 EUR
2526+0.028 EUR
2703+0.026 EUR
3068+0.023 EUR
Mindestbestellmenge: 715
Im Einkaufswagen  Stück im Wert von  UAH
BAS20,235 BAS20.235.pdf
BAS20,235
Hersteller: NEXPERIA
Category: SMD universal diodes
Description: Diode: switching; SMD; 200V; 200mA; 50ns; SOT23; Ufmax: 1.25V
Type of diode: switching
Mounting: SMD
Max. off-state voltage: 200V
Load current: 0.2A
Reverse recovery time: 50ns
Semiconductor structure: single diode
Features of semiconductor devices: fast switching
Case: SOT23
Max. forward voltage: 1.25V
Max. forward impulse current: 9A
Kind of package: reel; tape
auf Bestellung 8617 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
625+0.11 EUR
910+0.079 EUR
1583+0.045 EUR
2041+0.035 EUR
2284+0.031 EUR
2718+0.026 EUR
3013+0.024 EUR
3268+0.022 EUR
Mindestbestellmenge: 625
Im Einkaufswagen  Stück im Wert von  UAH
74AHCT1G14GW,125 74AHC1G14G-DTE.PDF
74AHCT1G14GW,125
Hersteller: NEXPERIA
Category: Gates, inverters
Description: IC: digital; NOT; Ch: 1; CMOS,TTL; SMD; TSSOP5; Mini Logic; -40÷125°C
Type of integrated circuit: digital
Kind of gate: NOT
Number of channels: single; 1
Technology: CMOS; TTL
Mounting: SMD
Case: TSSOP5
Manufacturer series: Mini Logic
Supply voltage: 4.5...5.5V DC
Operating temperature: -40...125°C
Kind of package: reel; tape
Kind of input: with Schmitt trigger
Family: AHCT
auf Bestellung 681 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
625+0.11 EUR
681+0.1 EUR
Mindestbestellmenge: 625
Im Einkaufswagen  Stück im Wert von  UAH
PZU14B2,115 PZUXB_SER.pdf
PZU14B2,115
Hersteller: NEXPERIA
Category: SMD Zener diodes
Description: Diode: Zener; 0.55W; 14V; SMD; SOD323F; reel,tape; Ifmax: 200mA
Mounting: SMD
Kind of package: reel; tape
Semiconductor structure: single diode
Case: SOD323F
Type of diode: Zener
Max. load current: 0.2A
Power dissipation: 0.55W
Max. forward voltage: 1.1V
Tolerance: ±2%
Zener voltage: 14V
auf Bestellung 407 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
228+0.31 EUR
334+0.21 EUR
407+0.17 EUR
Mindestbestellmenge: 228
Im Einkaufswagen  Stück im Wert von  UAH
74HCT541PW,118 74HCT541PW,118.pdf
74HCT541PW,118
Hersteller: NEXPERIA
Category: Buffers, transceivers, drivers
Description: IC: digital; buffer,non-inverting,line driver; Ch: 8; CMOS,TTL
Type of integrated circuit: digital
Kind of integrated circuit: buffer; line driver; non-inverting
Number of channels: 8
Technology: CMOS; TTL
Mounting: SMD
Case: TSSOP20
Operating temperature: -40...125°C
Kind of package: reel; tape
Kind of output: 3-state
Supply voltage: 4.5...5.5V DC
Family: HCT
Quiescent current: 160µA
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
74VHCT541BQ,115 74VHC_VHCT541.pdf
Hersteller: NEXPERIA
Category: Buffers, transceivers, drivers
Description: IC: digital; 3-state,8bit,buffer,octal,line driver; Ch: 1; IN: 10
Type of integrated circuit: digital
Kind of integrated circuit: 3-state; 8bit; buffer; line driver; octal
Number of channels: 1
Technology: TTL
Mounting: SMD
Case: DHVQFN20
Operating temperature: -40...125°C
Kind of package: reel; tape
Kind of output: 3-state
Supply voltage: 4.5...5.5V DC
Family: VHCT
Number of inputs: 10
Produkt ist nicht verfügbar
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74VHCT541D,118 74VHC_VHCT541.pdf
Hersteller: NEXPERIA
Category: Buffers, transceivers, drivers
Description: IC: digital; 3-state,8bit,buffer,octal,line driver; Ch: 1; IN: 10
Type of integrated circuit: digital
Kind of integrated circuit: 3-state; 8bit; buffer; line driver; octal
Number of channels: 1
Technology: TTL
Mounting: SMD
Case: SO20
Operating temperature: -40...125°C
Kind of package: reel; tape
Kind of output: 3-state
Supply voltage: 4.5...5.5V DC
Family: VHCT
Number of inputs: 10
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
74VHCT541PW,118 74VHC_VHCT541.pdf
Hersteller: NEXPERIA
Category: Buffers, transceivers, drivers
Description: IC: digital; 3-state,8bit,buffer,octal,line driver; Ch: 1; IN: 10
Type of integrated circuit: digital
Kind of integrated circuit: 3-state; 8bit; buffer; line driver; octal
Number of channels: 1
Technology: TTL
Mounting: SMD
Case: TSSOP20
Operating temperature: -40...125°C
Kind of package: reel; tape
Kind of output: 3-state
Supply voltage: 4.5...5.5V DC
Family: VHCT
Number of inputs: 10
Produkt ist nicht verfügbar
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PSMN2R1-40PLQ PSMN2R1-40PL.pdf
PSMN2R1-40PLQ
Hersteller: NEXPERIA
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 150A; Idm: 1075A; 293W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 150A
Pulsed drain current: 1075A
Power dissipation: 293W
Case: SOT78; TO220AB
Gate-source voltage: ±20V
On-state resistance: 2.2mΩ
Mounting: THT
Gate charge: 168.9nC
Kind of package: tube
Kind of channel: enhancement
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
PSMN2R8-40PS,127 PSMN2R8-40PS.pdf
PSMN2R8-40PS,127
Hersteller: NEXPERIA
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 100A; Idm: 797A; 211W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 100A
Pulsed drain current: 797A
Power dissipation: 211W
Case: SOT78; TO220AB
Gate-source voltage: ±20V
On-state resistance: 2.3mΩ
Mounting: THT
Gate charge: 71nC
Kind of package: tube
Kind of channel: enhancement
Produkt ist nicht verfügbar
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PSMN2R6-40YS,115 PSMN2R6-40YS.pdf
PSMN2R6-40YS,115
Hersteller: NEXPERIA
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 100A; 131W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 100A
Power dissipation: 131W
Case: LFPAK56; PowerSO8; SOT669
Gate-source voltage: ±20V
On-state resistance: 5.3mΩ
Mounting: SMD
Gate charge: 63nC
Kind of package: reel; tape
Kind of channel: enhancement
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
PSMN2R2-40PS,127 PSMN2R2-40PS.pdf
PSMN2R2-40PS,127
Hersteller: NEXPERIA
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 100A; 306W; SOT78,TO220AB
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 100A
Power dissipation: 306W
Case: SOT78; TO220AB
Gate-source voltage: ±20V
On-state resistance: 3.9mΩ
Mounting: THT
Gate charge: 110nC
Kind of package: tube
Kind of channel: enhancement
Produkt ist nicht verfügbar
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PSMN2R0-60PS,127 PSMN2R0-60PS.pdf
PSMN2R0-60PS,127
Hersteller: NEXPERIA
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 120A; 338W; SOT78,TO220AB
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 120A
Power dissipation: 338W
Case: SOT78; TO220AB
Gate-source voltage: ±20V
On-state resistance: 5.1mΩ
Mounting: THT
Gate charge: 192nC
Kind of package: tube
Kind of channel: enhancement
Produkt ist nicht verfügbar
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PSMN2R5-60PLQ PSMN2R5-60PL.pdf
PSMN2R5-60PLQ
Hersteller: NEXPERIA
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 150A; Idm: 1002A; 349W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 150A
Pulsed drain current: 1002A
Power dissipation: 349W
Case: SOT78; TO220AB
Gate-source voltage: ±20V
On-state resistance: 2.3mΩ
Mounting: THT
Gate charge: 223nC
Kind of package: tube
Kind of channel: enhancement
Produkt ist nicht verfügbar
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PSMN2R8-40YSDX PSMN2R8-40YSD.pdf
Hersteller: NEXPERIA
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; NextPowerS3; unipolar; 40V; 119A; Idm: 658A
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 119A
Pulsed drain current: 658A
Power dissipation: 147W
Case: LFPAK56; PowerSO8; SOT669
Gate-source voltage: ±20V
On-state resistance: 5.4mΩ
Mounting: SMD
Gate charge: 62nC
Kind of package: reel; tape
Kind of channel: enhancement
Technology: NextPowerS3
Produkt ist nicht verfügbar
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PSMN2R4-30MLDX PSMN2R4-30MLD.pdf
Hersteller: NEXPERIA
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; NextPowerS3; unipolar; 30V; 70A; Idm: 580A
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 70A
Pulsed drain current: 580A
Power dissipation: 91W
Case: LFPAK33; SOT1210
Gate-source voltage: ±20V
On-state resistance: 5.3mΩ
Mounting: SMD
Gate charge: 51nC
Kind of package: reel; tape
Kind of channel: enhancement
Features of semiconductor devices: logic level
Technology: NextPowerS3
Produkt ist nicht verfügbar
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PSMN2R0-100SSFJ PSMN2R0-100SSF.pdf
Hersteller: NEXPERIA
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 189A; Idm: 1070A; 341W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 189A
Pulsed drain current: 1070A
Power dissipation: 341W
Case: LFPAK88; SOT1235
Gate-source voltage: ±20V
On-state resistance: 4.8mΩ
Mounting: SMD
Gate charge: 242nC
Kind of package: reel; tape
Kind of channel: enhancement
Produkt ist nicht verfügbar
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PSMN2R8-80BS,118 PSMN2R8-80BS.pdf
Hersteller: NEXPERIA
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 80V; 120A; Idm: 824A; 306W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 80V
Drain current: 120A
Pulsed drain current: 824A
Power dissipation: 306W
Case: D2PAK; SOT404
Gate-source voltage: ±20V
On-state resistance: 6.12mΩ
Mounting: SMD
Gate charge: 139nC
Kind of package: reel; tape
Kind of channel: enhancement
Produkt ist nicht verfügbar
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PSMN2R0-25MLDX PSMN2R0-25MLD.pdf
Hersteller: NEXPERIA
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; NextPowerS3; unipolar; 25V; 70A; Idm: 555A
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 25V
Drain current: 70A
Pulsed drain current: 555A
Power dissipation: 74W
Case: LFPAK33; SOT1210
Gate-source voltage: ±20V
On-state resistance: 5.2mΩ
Mounting: SMD
Gate charge: 34.4nC
Kind of package: reel; tape
Kind of channel: enhancement
Technology: NextPowerS3
Produkt ist nicht verfügbar
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PSMN2R0-60PSRQ PSMN2R0-60PSR.pdf
Hersteller: NEXPERIA
Category: THT N channel transistors
Description: Transistor: N-MOSFET; NextPowerS3; unipolar; 60V; 120A; Idm: 1135A
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 120A
Pulsed drain current: 1135A
Power dissipation: 338W
Case: SOT78; TO220AB
Gate-source voltage: ±20V
On-state resistance: 5.1mΩ
Mounting: THT
Gate charge: 192nC
Kind of channel: enhancement
Technology: NextPowerS3
Produkt ist nicht verfügbar
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PSMN2R2-40YSDX PSMN2R2-40YSD.pdf
Hersteller: NEXPERIA
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; NextPowerS3; unipolar; 40V; 140A; Idm: 789A
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 140A
Pulsed drain current: 789A
Power dissipation: 166W
Case: LFPAK56; PowerSO8; SOT669
Gate-source voltage: ±20V
On-state resistance: 4.3mΩ
Mounting: SMD
Gate charge: 63nC
Kind of package: reel; tape
Kind of channel: enhancement
Technology: NextPowerS3
Produkt ist nicht verfügbar
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PSMN2R7-30BL,118 PSMN2R7-30BL.pdf
Hersteller: NEXPERIA
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 100A; Idm: 730A; 170W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 100A
Pulsed drain current: 730A
Power dissipation: 170W
Case: D2PAK; SOT404
Gate-source voltage: ±20V
On-state resistance: 3.6mΩ
Mounting: SMD
Gate charge: 32nC
Kind of package: reel; tape
Kind of channel: enhancement
Produkt ist nicht verfügbar
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PSMN2R8-25MLC,115 PSMN2R8-25MLC.pdf
Hersteller: NEXPERIA
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 25V; 70A; Idm: 536A; 88W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 25V
Drain current: 70A
Pulsed drain current: 536A
Power dissipation: 88W
Case: LFPAK33; SOT1210
Gate-source voltage: ±20V
On-state resistance: 3.25mΩ
Mounting: SMD
Gate charge: 16.3nC
Kind of package: reel; tape
Kind of channel: enhancement
Produkt ist nicht verfügbar
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PSMN2R0-25YLDX PSMN2R0-25YLD.pdf
Hersteller: NEXPERIA
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; NextPowerS3; unipolar; 25V; 127A; Idm: 722A
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 25V
Drain current: 127A
Pulsed drain current: 722A
Power dissipation: 115W
Case: LFPAK56; PowerSO8; SOT669
Gate-source voltage: ±20V
On-state resistance: 4.95mΩ
Mounting: SMD
Gate charge: 34.1nC
Kind of package: reel; tape
Kind of channel: enhancement
Technology: NextPowerS3
Produkt ist nicht verfügbar
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PSMN2R0-30YL,115 PSMN2R0-30YL.pdf
Hersteller: NEXPERIA
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 100A; Idm: 667A; 97W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 100A
Pulsed drain current: 667A
Power dissipation: 97W
Case: LFPAK56; PowerSO8; SOT669
Gate-source voltage: ±20V
On-state resistance: 1.55mΩ
Mounting: SMD
Gate charge: 30nC
Kind of package: reel; tape
Kind of channel: enhancement
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
PSMN2R0-30YLDX PSMN2R0-30YLD.pdf
Hersteller: NEXPERIA
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; NextPowerS3; unipolar; 30V; 100A; Idm: 793A
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 100A
Pulsed drain current: 793A
Power dissipation: 142W
Case: LFPAK56; PowerSO8; SOT669
Gate-source voltage: ±20V
On-state resistance: 4.2mΩ
Mounting: SMD
Gate charge: 46nC
Kind of package: reel; tape
Kind of channel: enhancement
Technology: NextPowerS3
Produkt ist nicht verfügbar
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PSMN2R0-40YLDX PSMN2R0-40YLD.pdf
Hersteller: NEXPERIA
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; NextPowerS3; unipolar; 40V; 143A; Idm: 807A
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 143A
Pulsed drain current: 807A
Power dissipation: 166W
Case: LFPAK56; PowerSO8; SOT669
Gate-source voltage: ±20V
On-state resistance: 5.2mΩ
Mounting: SMD
Gate charge: 92nC
Kind of package: reel; tape
Kind of channel: enhancement
Technology: NextPowerS3
Produkt ist nicht verfügbar
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PSMN2R2-25YLC,115 PSMN2R2-25YLC.pdf
PSMN2R2-25YLC,115
Hersteller: NEXPERIA
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 25V; 100A; 106W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 25V
Drain current: 100A
Power dissipation: 106W
Case: LFPAK56; PowerSO8; SOT669
Gate-source voltage: ±20V
On-state resistance: 5.05mΩ
Mounting: SMD
Gate charge: 39nC
Kind of package: reel; tape
Kind of channel: enhancement
Produkt ist nicht verfügbar
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PSMN2R2-40BS,118 PHGLS24325-1.pdf?t.download=true&u=5oefqw
Hersteller: NEXPERIA
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 100A; Idm: 962A; 306W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 100A
Pulsed drain current: 962A
Power dissipation: 306W
Case: D2PAK; SOT404
Gate-source voltage: ±20V
On-state resistance: 3.76mΩ
Mounting: SMD
Gate charge: 130nC
Kind of package: reel; tape
Kind of channel: enhancement
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
PSMN2R5-30YL,115 PSMN2R5-30YL.pdf
Hersteller: NEXPERIA
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 100A; Idm: 580A; 88W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 100A
Pulsed drain current: 580A
Power dissipation: 88W
Case: LFPAK56; PowerSO8; SOT669
Gate-source voltage: ±20V
On-state resistance: 2.47mΩ
Mounting: SMD
Gate charge: 57nC
Kind of package: reel; tape
Kind of channel: enhancement
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PSMN2R5-40YLDX PSMN2R5-40YLD.pdf
Hersteller: NEXPERIA
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; NextPowerS3; unipolar; 40V; 121A; Idm: 682A
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 121A
Pulsed drain current: 682A
Power dissipation: 147W
Case: LFPAK56; PowerSO8; SOT669
Gate-source voltage: ±20V
On-state resistance: 6.4mΩ
Mounting: SMD
Gate charge: 78nC
Kind of package: reel; tape
Kind of channel: enhancement
Technology: NextPowerS3
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PSMN2R6-30YLC,115 PSMN2R6-30YLC.pdf
Hersteller: NEXPERIA
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 100A; Idm: 575A; 106W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 100A
Pulsed drain current: 575A
Power dissipation: 106W
Case: LFPAK56; PowerSO8; SOT669
Gate-source voltage: ±20V
On-state resistance: 2.35mΩ
Mounting: SMD
Gate charge: 18nC
Kind of package: reel; tape
Kind of channel: enhancement
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PSMN2R6-60PSQ PSMN2R6-60PS.pdf PHGL-S-A0001060194-1.pdf?t.download=true&u=5oefqw
PSMN2R6-60PSQ
Hersteller: NEXPERIA
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 150A; Idm: 961A; 326W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 150A
Pulsed drain current: 961A
Power dissipation: 326W
Case: SOT78; TO220AB
Gate-source voltage: ±20V
On-state resistance: 5.6mΩ
Mounting: THT
Gate charge: 0.14µC
Kind of package: tube
Kind of channel: enhancement
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PSMN2R9-25YLC,115 PSMN2R9-25YLC.pdf
Hersteller: NEXPERIA
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 25V; 100A; Idm: 517A; 92W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 25V
Drain current: 100A
Pulsed drain current: 517A
Power dissipation: 92W
Case: LFPAK56; PowerSO8; SOT669
Gate-source voltage: ±20V
On-state resistance: 3.45mΩ
Mounting: SMD
Gate charge: 33nC
Kind of package: reel; tape
Kind of channel: enhancement
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PMBTA56,215 PMBTA56.pdf
PMBTA56,215
Hersteller: NEXPERIA
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 80V; 0.5A; 250mW; SOT23,TO236AB
Type of transistor: PNP
Polarisation: bipolar
Collector-emitter voltage: 80V
Collector current: 0.5A
Power dissipation: 0.25W
Case: SOT23; TO236AB
Mounting: SMD
Kind of package: 7 inch reel; tape
Pulsed collector current: 1A
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PMBTA56-QR PMBTA56-Q.pdf
PMBTA56-QR
Hersteller: NEXPERIA
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 80V; 0.5A; 250mW; SOT23,TO236AB
Type of transistor: PNP
Polarisation: bipolar
Collector-emitter voltage: 80V
Collector current: 0.5A
Power dissipation: 0.25W
Case: SOT23; TO236AB
Current gain: 100
Mounting: SMD
Kind of package: 7 inch reel; tape
Application: automotive industry
Produkt ist nicht verfügbar
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PUMB20,115 PEMB20_PUMB20.pdf
PUMB20,115
Hersteller: NEXPERIA
Category: PNP SMD transistors
Description: Transistor: PNP x2; bipolar; BRT; 50V; 0.1A; 300mW; R1: 2.2kΩ
Mounting: SMD
Kind of package: reel; tape
Collector current: 0.1A
Type of transistor: PNP x2
Power dissipation: 0.3W
Kind of transistor: BRT
Polarisation: bipolar
Collector-emitter voltage: 50V
Base resistor: 2.2kΩ
Base-emitter resistor: 2.2kΩ
Case: SC88; SOT363; TSSOP6
Frequency: 180MHz
auf Bestellung 50 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
50+1.43 EUR
Mindestbestellmenge: 50
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PUMB30,115 PEMB30_PUMB30.pdf
PUMB30,115
Hersteller: NEXPERIA
Category: PNP SMD transistors
Description: Transistor: PNP x2; bipolar; BRT; 50V; 0.1A; 300mW; 2.2kΩ
Mounting: SMD
Kind of package: reel; tape
Collector current: 0.1A
Type of transistor: PNP x2
Power dissipation: 0.3W
Kind of transistor: BRT
Polarisation: bipolar
Collector-emitter voltage: 50V
Base resistor: 2.2kΩ
Case: SC88; SOT363; TSSOP6
Frequency: 180MHz
auf Bestellung 160 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
160+0.44 EUR
Mindestbestellmenge: 160
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74LVC2T45GN,115 74LVC_LVCH2T45.pdf
Hersteller: NEXPERIA
Category: Level translators
Description: IC: digital; 2bit,3-state,transceiver,translator; Ch: 1; CMOS,TTL
Type of integrated circuit: digital
Kind of integrated circuit: 2bit; 3-state; transceiver; translator
Number of channels: 1
Technology: CMOS; TTL
Supply voltage: 1.2...5.5V DC
Mounting: SMD
Case: XSON8
Operating temperature: -40...125°C
Kind of package: reel; tape
Kind of output: 3-state
Family: LVC
Produkt ist nicht verfügbar
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74LVC2T45GS-Q100X 74LVC_LVCH2T45_Q100.pdf
Hersteller: NEXPERIA
Category: Level translators
Description: IC: digital; 2bit,3-state,bidirectional,transceiver,translator
Type of integrated circuit: digital
Kind of integrated circuit: 2bit; 3-state; bidirectional; transceiver; translator
Number of channels: 2
Technology: CMOS
Supply voltage: 1.2...5.5V DC
Mounting: SMD
Case: XSON8
Operating temperature: -40...125°C
Kind of package: reel; tape
Family: LVC
Produkt ist nicht verfügbar
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74LVC2T45GS,115 74LVC_LVCH2T45.pdf
Hersteller: NEXPERIA
Category: Level translators
Description: IC: digital; 2bit,3-state,transceiver,translator; Ch: 1; CMOS,TTL
Type of integrated circuit: digital
Kind of integrated circuit: 2bit; 3-state; transceiver; translator
Number of channels: 1
Technology: CMOS; TTL
Supply voltage: 1.2...5.5V DC
Mounting: SMD
Case: XSON8
Operating temperature: -40...125°C
Kind of package: reel; tape
Kind of output: 3-state
Family: LVC
Produkt ist nicht verfügbar
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74LVC2T45GT-Q100X 74LVC_LVCH2T45_Q100.pdf
Hersteller: NEXPERIA
Category: Level translators
Description: IC: digital; 2bit,3-state,bidirectional,transceiver,translator
Type of integrated circuit: digital
Kind of integrated circuit: 2bit; 3-state; bidirectional; transceiver; translator
Number of channels: 2
Technology: CMOS
Supply voltage: 1.2...5.5V DC
Mounting: SMD
Case: XSON8
Operating temperature: -40...125°C
Kind of package: reel; tape
Family: LVC
Produkt ist nicht verfügbar
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74LVC2T45GT,115 74LVC_LVCH2T45.pdf
Hersteller: NEXPERIA
Category: Level translators
Description: IC: digital; 2bit,3-state,transceiver,translator; Ch: 1; CMOS,TTL
Type of integrated circuit: digital
Kind of integrated circuit: 2bit; 3-state; transceiver; translator
Number of channels: 1
Technology: CMOS; TTL
Supply voltage: 1.2...5.5V DC
Mounting: SMD
Case: XSON8
Operating temperature: -40...125°C
Kind of package: reel; tape
Kind of output: 3-state
Family: LVC
Produkt ist nicht verfügbar
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74LVC74AD,118 74LVC74AD,118.pdf
74LVC74AD,118
Hersteller: NEXPERIA
Category: Flip-Flops
Description: IC: digital; D flip-flop; Ch: 2; CMOS,TTL; SMD; SO14; LVC; reel,tape
Type of integrated circuit: digital
Kind of integrated circuit: D flip-flop
Number of channels: 2
Technology: CMOS; TTL
Mounting: SMD
Case: SO14
Operating temperature: -40...125°C
Family: LVC
Supply voltage: 1.2...3.6V DC
Kind of package: reel; tape
Trigger: positive-edge-triggered
Produkt ist nicht verfügbar
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74LVC74ABQ,115 74LVC74ABQ,115.pdf
Hersteller: NEXPERIA
Category: Flip-Flops
Description: IC: digital; D flip-flop; Ch: 2; CMOS,TTL; SMD; DHVQFN14; LVC
Type of integrated circuit: digital
Kind of integrated circuit: D flip-flop
Number of channels: 2
Technology: CMOS; TTL
Mounting: SMD
Case: DHVQFN14
Operating temperature: -40...125°C
Family: LVC
Supply voltage: 1.2...3.6V DC
Kind of package: reel; tape
Trigger: positive-edge-triggered
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74LVC74APW,118 74LVC74APW,118.pdf
74LVC74APW,118
Hersteller: NEXPERIA
Category: Flip-Flops
Description: IC: digital; D flip-flop; Ch: 2; CMOS,TTL; SMD; TSSOP14; LVC
Type of integrated circuit: digital
Kind of integrated circuit: D flip-flop
Number of channels: 2
Technology: CMOS; TTL
Mounting: SMD
Case: TSSOP14
Operating temperature: -40...125°C
Family: LVC
Supply voltage: 1.2...3.6V DC
Kind of package: reel; tape
Trigger: positive-edge-triggered
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74AHCT14D.112 74AHCT14D.pdf
74AHCT14D.112
Hersteller: NEXPERIA
Category: Gates, inverters
Description: IC: digital; NOT; Ch: 6; CMOS,TTL; SMD; SO14; AHCT; tube
Type of integrated circuit: digital
Kind of gate: NOT
Number of channels: hex; 6
Mounting: SMD
Case: SO14
Kind of input: with Schmitt trigger
Kind of package: tube
Technology: CMOS; TTL
Manufacturer series: AHCT
Produkt ist nicht verfügbar
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