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BF620,115 NEXPERIA Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 300V; 50mA; SC62,SOT89
Mounting: SMD
Type of transistor: NPN
Kind of package: reel; tape
Case: SC62; SOT89
Collector current: 50mA
Polarisation: bipolar
Current gain: 50
Collector-emitter voltage: 300V
Frequency: 60MHz
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BF621,115 BF621,115 NEXPERIA BF621.pdf Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 300V; 50mA; SC62,SOT89
Type of transistor: PNP
Polarisation: bipolar
Collector-emitter voltage: 300V
Collector current: 50mA
Case: SC62; SOT89
Current gain: 50
Mounting: SMD
Kind of package: reel; tape
Frequency: 60MHz
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PZU12B2A,115 PZU12B2A,115 NEXPERIA PZUXBA_SER.pdf Category: SMD Zener diodes
Description: Diode: Zener; 550mW; 12V; SMD; SOD323F; reel,tape; Ifmax: 200mA
Mounting: SMD
Semiconductor structure: single diode
Type of diode: Zener
Max. load current: 0.2A
Power dissipation: 0.55W
Max. forward voltage: 1.1V
Tolerance: ±2%
Zener voltage: 12V
Case: SOD323F
Kind of package: reel; tape
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PZU12BL,315 NEXPERIA PZUXBL_SER.pdf Category: SMD Zener diodes
Description: Diode: Zener; 0.25W; 12V; SMD; DFN1006-2,SOD882; Ifmax: 200mA
Mounting: SMD
Max. forward voltage: 1.1V
Power dissipation: 0.25W
Max. load current: 0.2A
Kind of package: reel; tape
Semiconductor structure: single diode
Case: DFN1006-2; SOD882
Zener voltage: 12V
Type of diode: Zener
Tolerance: ±5%
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BAS16LD,315 BAS16LD,315 NEXPERIA BAS16LD.pdf Category: SMD universal diodes
Description: Diode: switching; SMD; 100V; 215mA; 4ns; SOD882D; Ufmax: 1.25V; 0.25W
Type of diode: switching
Mounting: SMD
Max. off-state voltage: 0.1kV
Load current: 0.215A
Reverse recovery time: 4ns
Semiconductor structure: single diode
Case: SOD882D
Max. forward voltage: 1.25V
Max. forward impulse current: 4A
Leakage current: 0.5µA
Power dissipation: 0.25W
Kind of package: reel; tape
Features of semiconductor devices: fast switching
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PMEG3050EP,115 PMEG3050EP,115 NEXPERIA PMEG3050EP.115.pdf Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; CFP5,SOD128; SMD; 30V; 5A; reel,tape
Type of diode: Schottky rectifying
Case: CFP5; SOD128
Mounting: SMD
Max. off-state voltage: 30V
Load current: 5A
Semiconductor structure: single diode
Max. forward voltage: 0.36V
Max. forward impulse current: 70A
Kind of package: reel; tape
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PMEG3010ER,115 PMEG3010ER,115 NEXPERIA PMEG3010ER.pdf Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; CFP3,SOD123W; SMD; 30V; 1A; reel,tape
Type of diode: Schottky rectifying
Case: CFP3; SOD123W
Mounting: SMD
Max. off-state voltage: 30V
Load current: 1A
Semiconductor structure: single diode
Max. forward voltage: 0.32V
Max. forward impulse current: 50A
Kind of package: reel; tape
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PMEG6030EVPX PMEG6030EVPX NEXPERIA PMEG6030EVP.pdf Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; CFP5,SOD128; SMD; 60V; 3A; 20ns; 2.5W
Type of diode: Schottky rectifying
Case: CFP5; SOD128
Mounting: SMD
Max. off-state voltage: 60V
Load current: 3A
Semiconductor structure: single diode
Max. forward voltage: 0.475V
Max. forward impulse current: 70A
Kind of package: reel; tape
Reverse recovery time: 20ns
Power dissipation: 2.5W
Max. load current: 4.2A
Leakage current: 300mA
Capacitance: 575pF
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PMEG10030ELPX PMEG10030ELPX NEXPERIA PMEG10030ELP.pdf Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; CFP5,SOD128; SMD; 100V; 3A; reel,tape
Type of diode: Schottky rectifying
Case: CFP5; SOD128
Mounting: SMD
Max. off-state voltage: 0.1kV
Load current: 3A
Semiconductor structure: single diode
Max. forward voltage: 0.77V
Max. forward impulse current: 70A
Kind of package: reel; tape
Leakage current: 0.45µA
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PMEG060V100EPDZ NEXPERIA PMEG060V100EPD.pdf Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; CFP15,SOT1289; SMD; 60V; 14A; 16ns
Type of diode: Schottky rectifying
Case: CFP15; SOT1289
Mounting: SMD
Max. off-state voltage: 60V
Load current: 14A
Semiconductor structure: single diode
Max. forward voltage: 0.435V
Max. forward impulse current: 210A
Kind of package: reel; tape
Reverse recovery time: 16ns
Leakage current: 0.7mA
Capacitance: 350pF
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PMEG40T20ERX PMEG40T20ERX NEXPERIA PMEG40T20ER.pdf Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; CFP3,SOD123W; SMD; 40V; 2A; 11.5ns
Type of diode: Schottky rectifying
Case: CFP3; SOD123W
Mounting: SMD
Max. off-state voltage: 40V
Load current: 2A
Semiconductor structure: single diode
Max. forward voltage: 0.515V
Max. forward impulse current: 20A
Kind of package: reel; tape
Reverse recovery time: 11.5ns
Power dissipation: 1.15W
Capacitance: 350pF
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PMEG40T30EPX PMEG40T30EPX NEXPERIA PMEG40T30EP.pdf Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; CFP5,SOD128; SMD; 40V; 4.2A; 14ns
Type of diode: Schottky rectifying
Case: CFP5; SOD128
Mounting: SMD
Max. off-state voltage: 40V
Load current: 4.2A
Semiconductor structure: single diode
Max. forward voltage: 0.37V
Max. forward impulse current: 55A
Kind of package: reel; tape
Reverse recovery time: 14ns
Leakage current: 5.5mA
Capacitance: 240pF
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PMEG6020AELRX PMEG6020AELRX NEXPERIA PMEG6020AELR.pdf Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; CFP3,SOD123W; SMD; 60V; 2.83A; 9ns
Type of diode: Schottky rectifying
Case: CFP3; SOD123W
Mounting: SMD
Max. off-state voltage: 60V
Load current: 2.83A
Semiconductor structure: single diode
Max. forward voltage: 0.63V
Max. forward impulse current: 50A
Kind of package: reel; tape
Reverse recovery time: 9ns
Leakage current: 1.4mA
Capacitance: 88pF
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PMEG6030ETPX PMEG6030ETPX NEXPERIA PMEG6030ETP.pdf Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; CFP5,SOD128; SMD; 60V; 4.2A; 12ns
Type of diode: Schottky rectifying
Case: CFP5; SOD128
Mounting: SMD
Max. off-state voltage: 60V
Load current: 4.2A
Semiconductor structure: single diode
Max. forward voltage: 0.45V
Max. forward impulse current: 50A
Kind of package: reel; tape
Reverse recovery time: 12ns
Leakage current: 150mA
Capacitance: 0.12nF
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PMEG3050BEP,115 PMEG3050BEP,115 NEXPERIA PMEG3050BEP.pdf Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; CFP5,SOD128; SMD; 30V; 5A; reel,tape
Type of diode: Schottky rectifying
Case: CFP5; SOD128
Mounting: SMD
Max. off-state voltage: 30V
Load current: 5A
Semiconductor structure: single diode
Max. forward voltage: 0.45V
Max. forward impulse current: 70A
Kind of package: reel; tape
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PMEG10030ELP-QX PMEG10030ELP-QX NEXPERIA Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; CFP5,SOD128; SMD; 100V; 3A; 8ns
Type of diode: Schottky rectifying
Case: CFP5; SOD128
Mounting: SMD
Max. off-state voltage: 0.1kV
Load current: 3A
Semiconductor structure: single diode
Max. forward voltage: 0.77V
Max. forward impulse current: 70A
Kind of package: reel; tape
Reverse recovery time: 8ns
Application: automotive industry
Leakage current: 1.5mA
Capacitance: 0.2nF
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PMEG6010ETR,115 PMEG6010ETR,115 NEXPERIA PMEG6010ETR.pdf Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; CFP3,SOD123W; SMD; 60V; 1.4A
Type of diode: Schottky rectifying
Case: CFP3; SOD123W
Mounting: SMD
Max. off-state voltage: 60V
Load current: 1.4A
Semiconductor structure: single diode
Max. forward voltage: 0.46V
Max. forward impulse current: 50A
Kind of package: reel; tape
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PMEG3010BER,115 PMEG3010BER,115 NEXPERIA PMEG3010BER.pdf Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; CFP3,SOD123W; SMD; 30V; 1A; reel,tape
Type of diode: Schottky rectifying
Case: CFP3; SOD123W
Mounting: SMD
Max. off-state voltage: 30V
Load current: 1A
Semiconductor structure: single diode
Max. forward voltage: 0.45V
Max. forward impulse current: 50A
Kind of package: reel; tape
Power dissipation: 1.8W
Leakage current: 50µA
Capacitance: 170pF
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PMEG045T030EPDZ PMEG045T030EPDZ NEXPERIA PMEG045T030EPD.pdf Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; CFP15,SOT1289; SMD; 45V; 4.2A; 16ns
Type of diode: Schottky rectifying
Case: CFP15; SOT1289
Mounting: SMD
Max. off-state voltage: 45V
Load current: 4.2A
Semiconductor structure: single diode
Max. forward voltage: 0.325V
Max. forward impulse current: 45A
Kind of package: reel; tape
Reverse recovery time: 16ns
Leakage current: 9mA
Capacitance: 350pF
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PMEG40T30ERX PMEG40T30ERX NEXPERIA PMEG40T30ER.pdf Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; CFP3,SOD123W; SMD; 40V; 3A; reel,tape
Type of diode: Schottky rectifying
Case: CFP3; SOD123W
Mounting: SMD
Max. off-state voltage: 40V
Load current: 3A
Semiconductor structure: single diode
Kind of package: reel; tape
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PMEG4010BEA,115 PMEG4010BEA,115 NEXPERIA PMEGXX10BEX-DTE.pdf Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SOD323; SMD; 40V; 1A; reel,tape
Type of diode: Schottky rectifying
Case: SOD323
Mounting: SMD
Max. off-state voltage: 40V
Load current: 1A
Semiconductor structure: single diode
Max. forward voltage: 0.64V
Max. forward impulse current: 3.5A
Kind of package: reel; tape
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BAS21-QVL BAS21-QVL NEXPERIA Category: SMD universal diodes
Description: Diode: switching; SMD; 250V; 200mA; 50ns; SOT23; Ufmax: 1.25V; 0.25W
Type of diode: switching
Mounting: SMD
Max. off-state voltage: 250V
Load current: 0.2A
Reverse recovery time: 50ns
Semiconductor structure: single diode
Case: SOT23
Max. forward voltage: 1.25V
Max. forward impulse current: 9A
Leakage current: 0.1mA
Power dissipation: 0.25W
Kind of package: reel; tape
Application: automotive industry
Features of semiconductor devices: fast switching
Produkt ist nicht verfügbar
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PMEG4010BEA-QF PMEG4010BEA-QF NEXPERIA PMEG4010BEA-Q.pdf Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SOD323; SMD; 40V; 1A; reel,tape
Type of diode: Schottky rectifying
Case: SOD323
Mounting: SMD
Max. off-state voltage: 40V
Load current: 1A
Semiconductor structure: single diode
Capacitance: 50pF
Max. forward voltage: 0.64V
Leakage current: 0.1mA
Max. forward impulse current: 10A
Kind of package: reel; tape
Application: automotive industry
Produkt ist nicht verfügbar
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PMEG4010BEA-QX PMEG4010BEA-QX NEXPERIA PMEG4010BEA-Q.pdf Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SOD323; SMD; 40V; 1A; reel,tape
Type of diode: Schottky rectifying
Case: SOD323
Mounting: SMD
Max. off-state voltage: 40V
Load current: 1A
Semiconductor structure: single diode
Capacitance: 50pF
Max. forward voltage: 0.64V
Leakage current: 0.1mA
Max. forward impulse current: 10A
Kind of package: reel; tape
Application: automotive industry
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BC847BW-QX BC847BW-QX NEXPERIA BC847XW-Q_SER.pdf Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 45V; 0.1A; 200mW; SC70,SOT323
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 45V
Collector current: 0.1A
Power dissipation: 0.2W
Case: SC70; SOT323
Current gain: 200...450
Mounting: SMD
Kind of package: reel; tape
Frequency: 100MHz
Application: automotive industry
Pulsed collector current: 0.2A
Produkt ist nicht verfügbar
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BC847BW,135 BC847BW,135 NEXPERIA BC847XW_SER.pdf Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 45V; 0.1A; 200mW; SC70,SOT323
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 45V
Collector current: 0.1A
Power dissipation: 0.2W
Case: SC70; SOT323
Current gain: 200...450
Mounting: SMD
Kind of package: reel; tape
Frequency: 100MHz
Pulsed collector current: 0.2A
Produkt ist nicht verfügbar
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BC847CW-QX BC847CW-QX NEXPERIA BC847XW-Q_SER.pdf Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 45V; 0.1A; 200mW; SC70,SOT323
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 45V
Collector current: 0.1A
Power dissipation: 0.2W
Case: SC70; SOT323
Current gain: 420...800
Mounting: SMD
Kind of package: reel; tape
Frequency: 100MHz
Application: automotive industry
Pulsed collector current: 0.2A
Produkt ist nicht verfügbar
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BC846BW-QF BC846BW-QF NEXPERIA BC846XW-Q_SER.pdf Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 65V; 0.1A; 200mW; SC70,SOT323
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 65V
Collector current: 0.1A
Power dissipation: 0.2W
Case: SC70; SOT323
Pulsed collector current: 0.2A
Current gain: 200...450
Mounting: SMD
Kind of package: reel; tape
Frequency: 100MHz
Application: automotive industry
Produkt ist nicht verfügbar
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PBSS5160V,115 NEXPERIA PBSS5160V.pdf Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 60V; 1A; SOT666
Type of transistor: PNP
Polarisation: bipolar
Collector-emitter voltage: 60V
Collector current: 1A
Case: SOT666
Mounting: SMD
Kind of package: reel; tape
Frequency: 220MHz
Current gain: 100...350
Produkt ist nicht verfügbar
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PMEG2010AEH,115 PMEG2010AEH,115 NEXPERIA PMEG2010AEH_PMEG2010AET.pdf Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SOD123F; SMD; 20V; 1A; reel,tape
Type of diode: Schottky rectifying
Case: SOD123F
Mounting: SMD
Max. off-state voltage: 20V
Load current: 1A
Semiconductor structure: single diode
Max. forward voltage: 0.43V
Max. forward impulse current: 9A
Kind of package: reel; tape
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PMEG2010AEH-QX PMEG2010AEH-QX NEXPERIA PMEG2010AEH-Q.pdf Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SOD123F; SMD; 20V; 1A; reel,tape
Type of diode: Schottky rectifying
Case: SOD123F
Mounting: SMD
Max. off-state voltage: 20V
Load current: 1A
Semiconductor structure: single diode
Max. forward voltage: 0.43V
Max. forward impulse current: 9A
Kind of package: reel; tape
Application: automotive industry
Produkt ist nicht verfügbar
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PMEG2010BER,115 PMEG2010BER,115 NEXPERIA PMEG2010BER.pdf Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; CFP3,SOD123W; SMD; 20V; 1A; reel,tape
Type of diode: Schottky rectifying
Case: CFP3; SOD123W
Mounting: SMD
Max. off-state voltage: 20V
Load current: 1A
Semiconductor structure: single diode
Max. forward voltage: 0.45V
Max. forward impulse current: 50A
Kind of package: reel; tape
Power dissipation: 1.8W
Leakage current: 50µA
Capacitance: 185pF
Produkt ist nicht verfügbar
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PMEG2010BELD-QYL NEXPERIA PMEG2010BELD-Q.pdf Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; DFN1006D-2,SOD882D; SMD; 20V; 1A
Type of diode: Schottky rectifying
Case: DFN1006D-2; SOD882D
Mounting: SMD
Max. off-state voltage: 20V
Load current: 1A
Semiconductor structure: single diode
Max. forward voltage: 0.49V
Max. forward impulse current: 6A
Kind of package: reel; tape
Reverse recovery time: 1.6ns
Leakage current: 50µA
Capacitance: 40pF
Produkt ist nicht verfügbar
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PMEG2010AEJ,115 PMEG2010AEJ,115 NEXPERIA PMEG2010AEJ.pdf Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SC90,SOD323F; SMD; 20V; 1A; reel,tape
Type of diode: Schottky rectifying
Case: SC90; SOD323F
Mounting: SMD
Max. off-state voltage: 20V
Load current: 1A
Semiconductor structure: single diode
Capacitance: 50pF
Max. forward voltage: 0.55V
Kind of package: reel; tape
Produkt ist nicht verfügbar
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PMEG2010BELD,315 NEXPERIA PMEG2010BELD.pdf Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; DFN1006D-2,SOD882D; SMD; 20V; 1A
Type of diode: Schottky rectifying
Case: DFN1006D-2; SOD882D
Mounting: SMD
Max. off-state voltage: 20V
Load current: 1A
Semiconductor structure: single diode
Max. forward voltage: 0.49V
Max. forward impulse current: 6A
Kind of package: reel; tape
Capacitance: 40pF
Produkt ist nicht verfügbar
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PMEG2010BER-QX PMEG2010BER-QX NEXPERIA Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; CFP3,SOD123W; SMD; 20V; 1A; reel,tape
Type of diode: Schottky rectifying
Case: CFP3; SOD123W
Mounting: SMD
Max. off-state voltage: 20V
Load current: 1A
Semiconductor structure: single diode
Max. forward voltage: 0.45V
Max. forward impulse current: 50A
Kind of package: reel; tape
Power dissipation: 1.8W
Application: automotive industry
Leakage current: 50µA
Capacitance: 185pF
Produkt ist nicht verfügbar
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PMEG2010BEV,115 NEXPERIA PMEG2010BEV.pdf Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SOT666; SMD; 20V; 1A; reel,tape
Type of diode: Schottky rectifying
Case: SOT666
Mounting: SMD
Max. off-state voltage: 20V
Load current: 1A
Semiconductor structure: single diode
Max. forward voltage: 0.5V
Max. forward impulse current: 10A
Kind of package: reel; tape
Capacitance: 80pF
Produkt ist nicht verfügbar
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PMDXB600UNELZ NEXPERIA PMDXB600UNEL.pdf Category: Multi channel transistors
Description: Transistor: N-MOSFET x2; Trench; unipolar; 20V; 400mA; Idm: 2.5A
Type of transistor: N-MOSFET x2
Technology: Trench
Polarisation: unipolar
Drain-source voltage: 20V
Drain current: 0.4A
Pulsed drain current: 2.5A
Case: DFN1010B-6; SOT1216
Gate-source voltage: ±8V
On-state resistance: 1Ω
Mounting: SMD
Gate charge: 0.7nC
Kind of package: reel; tape
Kind of channel: enhancement
Version: ESD
Produkt ist nicht verfügbar
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PMDXB600UNEZ NEXPERIA PMDXB600UNE.pdf Category: Multi channel transistors
Description: Transistor: N-MOSFET x2; Trench; unipolar; 20V; 400mA; Idm: 2.5A
Type of transistor: N-MOSFET x2
Technology: Trench
Polarisation: unipolar
Drain-source voltage: 20V
Drain current: 0.4A
Pulsed drain current: 2.5A
Case: DFN1010B-6; SOT1216
Gate-source voltage: ±8V
On-state resistance: 1Ω
Mounting: SMD
Gate charge: 0.7nC
Kind of package: reel; tape
Kind of channel: enhancement
Version: ESD
Produkt ist nicht verfügbar
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BZV85-C5V1,133 BZV85-C5V1,133 NEXPERIA BZV85-C10.113.pdf Category: THT Zener diodes
Description: Diode: Zener; 1/1.3W; 5.1V; DO41; single diode; 500mA; Ufmax: 1V
Type of diode: Zener
Power dissipation: 1/1.3W
Zener voltage: 5.1V
Case: DO41
Mounting: THT
Tolerance: ±5%
Semiconductor structure: single diode
Max. load current: 0.5A
Max. forward voltage: 1V
Kind of package: Ammo Pack
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BAS20-QR BAS20-QR NEXPERIA BAS20-Q.pdf Category: SMD universal diodes
Description: Diode: switching; SMD; 200V; 200mA; 50ns; SOT23; Ufmax: 1.25V; 0.25W
Type of diode: switching
Mounting: SMD
Max. off-state voltage: 200V
Load current: 0.2A
Reverse recovery time: 50ns
Semiconductor structure: single diode
Features of semiconductor devices: fast switching
Case: SOT23
Max. forward voltage: 1.25V
Max. forward impulse current: 9A
Power dissipation: 0.25W
Kind of package: reel; tape
Application: automotive industry
Leakage current: 0.1mA
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BAS20-QVL BAS20-QVL NEXPERIA BAS20-Q.pdf Category: SMD universal diodes
Description: Diode: switching; SMD; 200V; 200mA; 50ns; SOT23; Ufmax: 1.25V; 0.25W
Type of diode: switching
Mounting: SMD
Max. off-state voltage: 200V
Load current: 0.2A
Reverse recovery time: 50ns
Semiconductor structure: single diode
Features of semiconductor devices: fast switching
Case: SOT23
Max. forward voltage: 1.25V
Max. forward impulse current: 9A
Power dissipation: 0.25W
Kind of package: reel; tape
Application: automotive industry
Leakage current: 0.1mA
Produkt ist nicht verfügbar
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BAW56W-QF BAW56W-QF NEXPERIA BAW56W-Q.pdf Category: SMD universal diodes
Description: Diode: switching; SMD; 90V; 150mA; 4ns; SOT323; Ufmax: 1.25V; Ifsm: 4A
Type of diode: switching
Mounting: SMD
Max. off-state voltage: 90V
Load current: 0.15A
Reverse recovery time: 4ns
Semiconductor structure: common anode; double
Case: SOT323
Max. forward voltage: 1.25V
Max. forward impulse current: 4A
Leakage current: 0.15mA
Power dissipation: 0.2W
Kind of package: reel; tape
Application: automotive industry
Features of semiconductor devices: fast switching
Produkt ist nicht verfügbar
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BAS70W,115 BAS70W,115 NEXPERIA BAS70_SER.pdf Category: SMD Schottky diodes
Description: Diode: Schottky switching; SOT323; SMD; 70V; 70mA; reel,tape
Type of diode: Schottky switching
Case: SOT323
Mounting: SMD
Max. off-state voltage: 70V
Load current: 70mA
Semiconductor structure: single diode
Max. forward voltage: 1V
Max. forward impulse current: 0.1A
Kind of package: reel; tape
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BAS70W-QX BAS70W-QX NEXPERIA Category: SMD Schottky diodes
Description: Diode: Schottky switching; SOT323; SMD; 70V; 70mA; reel,tape
Type of diode: Schottky switching
Case: SOT323
Mounting: SMD
Max. off-state voltage: 70V
Load current: 70mA
Semiconductor structure: single diode
Max. forward voltage: 1V
Max. forward impulse current: 0.1A
Kind of package: reel; tape
Application: automotive industry
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BAT54J-QX BAT54J-QX NEXPERIA BAT54J-Q.pdf Category: SMD Schottky diodes
Description: Diode: Schottky switching; SC90,SOD323F; SMD; 30V; 0.2A; reel,tape
Type of diode: Schottky switching
Case: SC90; SOD323F
Mounting: SMD
Max. off-state voltage: 30V
Load current: 0.2A
Semiconductor structure: single diode
Max. forward voltage: 0.8V
Max. forward impulse current: 0.6A
Kind of package: reel; tape
Power dissipation: 0.55W
Application: automotive industry
Leakage current: 2µA
Capacitance: 10pF
Produkt ist nicht verfügbar
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NZH22C,115 NZH22C,115 NEXPERIA NZH_SER.pdf Category: SMD Zener diodes
Description: Diode: Zener; 0.5W; 22V; SMD; SOD123F; reel,tape; Ifmax: 250mA
Type of diode: Zener
Power dissipation: 0.5W
Zener voltage: 22V
Mounting: SMD
Tolerance: ±2.5%
Max. forward voltage: 0.9V
Case: SOD123F
Kind of package: reel; tape
Max. load current: 0.25A
Semiconductor structure: single diode
Produkt ist nicht verfügbar
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BUK6D120-60PX BUK6D120-60PX NEXPERIA BUK6D120-60P.pdf Category: SMD P channel transistors
Description: Transistor: P-MOSFET; Trench; unipolar; -60V; -5.1A; Idm: -32A; 15W
Type of transistor: P-MOSFET
Technology: Trench
Polarisation: unipolar
Drain-source voltage: -60V
Drain current: -5.1A
Pulsed drain current: -32A
Power dissipation: 15W
Case: DFN2020MD-6; SOT1220
On-state resistance: 256mΩ
Mounting: SMD
Gate charge: 18nC
Kind of package: reel; tape
Kind of channel: enhancement
Application: automotive industry
Produkt ist nicht verfügbar
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74HCT597D,653 74HCT597D,653 NEXPERIA 74HCT597D,653.pdf Category: Shift registers
Description: IC: digital; 8bit,shift register,parallel in,serial output
Type of integrated circuit: digital
Kind of integrated circuit: 8bit; parallel in; serial output; shift register
Technology: CMOS; TTL
Mounting: SMD
Case: SO16
Family: HCT
Kind of package: reel; tape
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74HCT597PWJ NEXPERIA 74HCT597PWJ.pdf Category: Shift registers
Description: IC: digital; 8bit,D flip-flop,shift register; Ch: 1; TTL; SMD; HCT
Type of integrated circuit: digital
Kind of integrated circuit: 8bit; D flip-flop; shift register
Technology: TTL
Mounting: SMD
Case: TSSOP16
Family: HCT
Operating temperature: -40...125°C
Number of inputs: 13
Supply voltage: 4.5...5.5V DC
Kind of package: reel; tape
Number of channels: 1
Produkt ist nicht verfügbar
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74LVC1G58GW,125 74LVC1G58GW,125 NEXPERIA 74LVC1G58.pdf Category: Gates, inverters
Description: IC: digital; configurable,multiple-function; IN: 3; CMOS,TTL; SMD
Type of integrated circuit: digital
Kind of gate: configurable; multiple-function
Number of inputs: 3
Mounting: SMD
Case: SC88
Supply voltage: 1.65...5.5V DC
Operating temperature: -40...125°C
Kind of package: reel; tape
Kind of input: with Schmitt trigger
Family: LVC
Manufacturer series: Mini Logic
Technology: CMOS; TTL
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74LVC1G58GM,115 NEXPERIA 74LVC1G58.pdf Category: Gates, inverters
Description: IC: digital; buffer,inverter,Schmitt trigger; Ch: 1; IN: 3; SMD
Type of integrated circuit: digital
Kind of gate: AND; configurable; multiple-function; NAND; NOR; OR; XNOR
Number of inputs: 3
Mounting: SMD
Case: XSON6
Supply voltage: 1.65...5.5V DC
Operating temperature: -40...125°C
Kind of package: reel; tape
Kind of input: with Schmitt trigger
Family: LVC
Manufacturer series: Mini Logic
Technology: CMOS; TTL
Kind of integrated circuit: buffer; inverter; Schmitt trigger
Number of channels: 1
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74LVC1G58GS,132 NEXPERIA 74LVC1G58.pdf Category: Gates, inverters
Description: IC: digital; buffer,inverter,Schmitt trigger; Ch: 1; IN: 3; SMD
Type of integrated circuit: digital
Kind of gate: AND; configurable; multiple-function; NAND; NOR; OR; XNOR
Number of inputs: 3
Mounting: SMD
Case: XSON6
Supply voltage: 1.65...5.5V DC
Operating temperature: -40...125°C
Kind of package: reel; tape
Kind of input: with Schmitt trigger
Family: LVC
Manufacturer series: Mini Logic
Technology: CMOS; TTL
Kind of integrated circuit: buffer; inverter; Schmitt trigger
Number of channels: 1
Produkt ist nicht verfügbar
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BAS70XY,115 BAS70XY,115 NEXPERIA BAS70XY.pdf Category: SMD Schottky diodes
Description: Diode: Schottky switching; SC88,SOT363,TSSOP6; SMD; 70V; 70mA
Mounting: SMD
Case: SC88; SOT363; TSSOP6
Kind of package: reel; tape
Max. off-state voltage: 70V
Load current: 70mA
Semiconductor structure: double series x2
Capacitance: 2pF
Type of diode: Schottky switching
Max. forward impulse current: 0.1A
Max. forward voltage: 1V
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NX3008PBKS,115 NX3008PBKS,115 NEXPERIA NX3008PBKS.pdf Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -30V; -0.2A; 80mW
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -30V
Drain current: -200mA
Power dissipation: 80mW
Case: SC88; SOT363; TSSOP6
Gate-source voltage: ±8V
On-state resistance: 4.1Ω
Mounting: SMD
Gate charge: 0.72nC
Kind of package: reel; tape
Kind of channel: enhancement
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NX3008NBK,215 NX3008NBK,215 NEXPERIA NX3008NBK.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 0.4A; 350mW; SOT23,TO236AB
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 0.4A
Power dissipation: 0.35W
Case: SOT23; TO236AB
Gate-source voltage: ±8V
On-state resistance: 1.4Ω
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
Gate charge: 0.68nC
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NX3008NBKS,115 NX3008NBKS,115 NEXPERIA NX3008NBKS.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 0.35A; 280mW
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 0.35A
Power dissipation: 0.28W
Case: SC88; SOT363; TSSOP6
Gate-source voltage: ±8V
On-state resistance: 1.4Ω
Mounting: SMD
Gate charge: 0.68nC
Kind of package: reel; tape
Kind of channel: enhancement
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NX138AKVL NX138AKVL NEXPERIA NX138AK.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; Trench; unipolar; 60V; 0.12A; Idm: 0.765A
Kind of channel: enhancement
Mounting: SMD
Type of transistor: N-MOSFET
Kind of package: reel; tape
Case: SOT23; TO236AB
Technology: Trench
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 0.12A
Gate charge: 0.9nC
Power dissipation: 0.265W
On-state resistance: 10Ω
Pulsed drain current: 0.765A
Gate-source voltage: ±20V
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BAS70XY-QX NEXPERIA Category: SMD Schottky diodes
Description: Diode: Schottky switching; SC88,SOT363,TSSOP6; SMD; 70V; 70mA
Type of diode: Schottky switching
Case: SC88; SOT363; TSSOP6
Mounting: SMD
Max. off-state voltage: 70V
Load current: 70mA
Semiconductor structure: double series x2
Max. forward voltage: 1V
Kind of package: reel; tape
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PSMN040-100MSEX NEXPERIA PSMN040-100MSE.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 30A; Idm: 121A; 91W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 30A
Pulsed drain current: 121A
Power dissipation: 91W
Case: LFPAK33; SOT1210
Gate-source voltage: ±20V
On-state resistance: 29.4mΩ
Mounting: SMD
Gate charge: 30nC
Kind of package: reel; tape
Kind of channel: enhancement
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BF620,115
Hersteller: NEXPERIA
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 300V; 50mA; SC62,SOT89
Mounting: SMD
Type of transistor: NPN
Kind of package: reel; tape
Case: SC62; SOT89
Collector current: 50mA
Polarisation: bipolar
Current gain: 50
Collector-emitter voltage: 300V
Frequency: 60MHz
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BF621,115 BF621.pdf
Hersteller: NEXPERIA
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 300V; 50mA; SC62,SOT89
Type of transistor: PNP
Polarisation: bipolar
Collector-emitter voltage: 300V
Collector current: 50mA
Case: SC62; SOT89
Current gain: 50
Mounting: SMD
Kind of package: reel; tape
Frequency: 60MHz
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PZU12B2A,115 PZUXBA_SER.pdf
Hersteller: NEXPERIA
Category: SMD Zener diodes
Description: Diode: Zener; 550mW; 12V; SMD; SOD323F; reel,tape; Ifmax: 200mA
Mounting: SMD
Semiconductor structure: single diode
Type of diode: Zener
Max. load current: 0.2A
Power dissipation: 0.55W
Max. forward voltage: 1.1V
Tolerance: ±2%
Zener voltage: 12V
Case: SOD323F
Kind of package: reel; tape
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PZU12BL,315 PZUXBL_SER.pdf
Hersteller: NEXPERIA
Category: SMD Zener diodes
Description: Diode: Zener; 0.25W; 12V; SMD; DFN1006-2,SOD882; Ifmax: 200mA
Mounting: SMD
Max. forward voltage: 1.1V
Power dissipation: 0.25W
Max. load current: 0.2A
Kind of package: reel; tape
Semiconductor structure: single diode
Case: DFN1006-2; SOD882
Zener voltage: 12V
Type of diode: Zener
Tolerance: ±5%
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BAS16LD,315 BAS16LD.pdf
Hersteller: NEXPERIA
Category: SMD universal diodes
Description: Diode: switching; SMD; 100V; 215mA; 4ns; SOD882D; Ufmax: 1.25V; 0.25W
Type of diode: switching
Mounting: SMD
Max. off-state voltage: 0.1kV
Load current: 0.215A
Reverse recovery time: 4ns
Semiconductor structure: single diode
Case: SOD882D
Max. forward voltage: 1.25V
Max. forward impulse current: 4A
Leakage current: 0.5µA
Power dissipation: 0.25W
Kind of package: reel; tape
Features of semiconductor devices: fast switching
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PMEG3050EP,115 PMEG3050EP.115.pdf
Hersteller: NEXPERIA
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; CFP5,SOD128; SMD; 30V; 5A; reel,tape
Type of diode: Schottky rectifying
Case: CFP5; SOD128
Mounting: SMD
Max. off-state voltage: 30V
Load current: 5A
Semiconductor structure: single diode
Max. forward voltage: 0.36V
Max. forward impulse current: 70A
Kind of package: reel; tape
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PMEG3010ER,115 PMEG3010ER.pdf
Hersteller: NEXPERIA
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; CFP3,SOD123W; SMD; 30V; 1A; reel,tape
Type of diode: Schottky rectifying
Case: CFP3; SOD123W
Mounting: SMD
Max. off-state voltage: 30V
Load current: 1A
Semiconductor structure: single diode
Max. forward voltage: 0.32V
Max. forward impulse current: 50A
Kind of package: reel; tape
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PMEG6030EVPX PMEG6030EVP.pdf
Hersteller: NEXPERIA
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; CFP5,SOD128; SMD; 60V; 3A; 20ns; 2.5W
Type of diode: Schottky rectifying
Case: CFP5; SOD128
Mounting: SMD
Max. off-state voltage: 60V
Load current: 3A
Semiconductor structure: single diode
Max. forward voltage: 0.475V
Max. forward impulse current: 70A
Kind of package: reel; tape
Reverse recovery time: 20ns
Power dissipation: 2.5W
Max. load current: 4.2A
Leakage current: 300mA
Capacitance: 575pF
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PMEG10030ELPX PMEG10030ELP.pdf
Hersteller: NEXPERIA
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; CFP5,SOD128; SMD; 100V; 3A; reel,tape
Type of diode: Schottky rectifying
Case: CFP5; SOD128
Mounting: SMD
Max. off-state voltage: 0.1kV
Load current: 3A
Semiconductor structure: single diode
Max. forward voltage: 0.77V
Max. forward impulse current: 70A
Kind of package: reel; tape
Leakage current: 0.45µA
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PMEG060V100EPDZ PMEG060V100EPD.pdf
Hersteller: NEXPERIA
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; CFP15,SOT1289; SMD; 60V; 14A; 16ns
Type of diode: Schottky rectifying
Case: CFP15; SOT1289
Mounting: SMD
Max. off-state voltage: 60V
Load current: 14A
Semiconductor structure: single diode
Max. forward voltage: 0.435V
Max. forward impulse current: 210A
Kind of package: reel; tape
Reverse recovery time: 16ns
Leakage current: 0.7mA
Capacitance: 350pF
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PMEG40T20ERX PMEG40T20ER.pdf
Hersteller: NEXPERIA
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; CFP3,SOD123W; SMD; 40V; 2A; 11.5ns
Type of diode: Schottky rectifying
Case: CFP3; SOD123W
Mounting: SMD
Max. off-state voltage: 40V
Load current: 2A
Semiconductor structure: single diode
Max. forward voltage: 0.515V
Max. forward impulse current: 20A
Kind of package: reel; tape
Reverse recovery time: 11.5ns
Power dissipation: 1.15W
Capacitance: 350pF
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PMEG40T30EPX PMEG40T30EP.pdf
Hersteller: NEXPERIA
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; CFP5,SOD128; SMD; 40V; 4.2A; 14ns
Type of diode: Schottky rectifying
Case: CFP5; SOD128
Mounting: SMD
Max. off-state voltage: 40V
Load current: 4.2A
Semiconductor structure: single diode
Max. forward voltage: 0.37V
Max. forward impulse current: 55A
Kind of package: reel; tape
Reverse recovery time: 14ns
Leakage current: 5.5mA
Capacitance: 240pF
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PMEG6020AELRX PMEG6020AELR.pdf
Hersteller: NEXPERIA
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; CFP3,SOD123W; SMD; 60V; 2.83A; 9ns
Type of diode: Schottky rectifying
Case: CFP3; SOD123W
Mounting: SMD
Max. off-state voltage: 60V
Load current: 2.83A
Semiconductor structure: single diode
Max. forward voltage: 0.63V
Max. forward impulse current: 50A
Kind of package: reel; tape
Reverse recovery time: 9ns
Leakage current: 1.4mA
Capacitance: 88pF
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PMEG6030ETPX PMEG6030ETP.pdf
Hersteller: NEXPERIA
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; CFP5,SOD128; SMD; 60V; 4.2A; 12ns
Type of diode: Schottky rectifying
Case: CFP5; SOD128
Mounting: SMD
Max. off-state voltage: 60V
Load current: 4.2A
Semiconductor structure: single diode
Max. forward voltage: 0.45V
Max. forward impulse current: 50A
Kind of package: reel; tape
Reverse recovery time: 12ns
Leakage current: 150mA
Capacitance: 0.12nF
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PMEG3050BEP,115 PMEG3050BEP.pdf
Hersteller: NEXPERIA
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; CFP5,SOD128; SMD; 30V; 5A; reel,tape
Type of diode: Schottky rectifying
Case: CFP5; SOD128
Mounting: SMD
Max. off-state voltage: 30V
Load current: 5A
Semiconductor structure: single diode
Max. forward voltage: 0.45V
Max. forward impulse current: 70A
Kind of package: reel; tape
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PMEG10030ELP-QX
Hersteller: NEXPERIA
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; CFP5,SOD128; SMD; 100V; 3A; 8ns
Type of diode: Schottky rectifying
Case: CFP5; SOD128
Mounting: SMD
Max. off-state voltage: 0.1kV
Load current: 3A
Semiconductor structure: single diode
Max. forward voltage: 0.77V
Max. forward impulse current: 70A
Kind of package: reel; tape
Reverse recovery time: 8ns
Application: automotive industry
Leakage current: 1.5mA
Capacitance: 0.2nF
auf Bestellung 201 Stücke:
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PMEG6010ETR,115 PMEG6010ETR.pdf
Hersteller: NEXPERIA
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; CFP3,SOD123W; SMD; 60V; 1.4A
Type of diode: Schottky rectifying
Case: CFP3; SOD123W
Mounting: SMD
Max. off-state voltage: 60V
Load current: 1.4A
Semiconductor structure: single diode
Max. forward voltage: 0.46V
Max. forward impulse current: 50A
Kind of package: reel; tape
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PMEG3010BER,115 PMEG3010BER.pdf
Hersteller: NEXPERIA
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; CFP3,SOD123W; SMD; 30V; 1A; reel,tape
Type of diode: Schottky rectifying
Case: CFP3; SOD123W
Mounting: SMD
Max. off-state voltage: 30V
Load current: 1A
Semiconductor structure: single diode
Max. forward voltage: 0.45V
Max. forward impulse current: 50A
Kind of package: reel; tape
Power dissipation: 1.8W
Leakage current: 50µA
Capacitance: 170pF
auf Bestellung 3025 Stücke:
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PMEG045T030EPDZ PMEG045T030EPD.pdf
Hersteller: NEXPERIA
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; CFP15,SOT1289; SMD; 45V; 4.2A; 16ns
Type of diode: Schottky rectifying
Case: CFP15; SOT1289
Mounting: SMD
Max. off-state voltage: 45V
Load current: 4.2A
Semiconductor structure: single diode
Max. forward voltage: 0.325V
Max. forward impulse current: 45A
Kind of package: reel; tape
Reverse recovery time: 16ns
Leakage current: 9mA
Capacitance: 350pF
auf Bestellung 237 Stücke:
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PMEG40T30ERX PMEG40T30ER.pdf
Hersteller: NEXPERIA
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; CFP3,SOD123W; SMD; 40V; 3A; reel,tape
Type of diode: Schottky rectifying
Case: CFP3; SOD123W
Mounting: SMD
Max. off-state voltage: 40V
Load current: 3A
Semiconductor structure: single diode
Kind of package: reel; tape
auf Bestellung 8577 Stücke:
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PMEG4010BEA,115 PMEGXX10BEX-DTE.pdf
Hersteller: NEXPERIA
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SOD323; SMD; 40V; 1A; reel,tape
Type of diode: Schottky rectifying
Case: SOD323
Mounting: SMD
Max. off-state voltage: 40V
Load current: 1A
Semiconductor structure: single diode
Max. forward voltage: 0.64V
Max. forward impulse current: 3.5A
Kind of package: reel; tape
Produkt ist nicht verfügbar
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BAS21-QVL
Hersteller: NEXPERIA
Category: SMD universal diodes
Description: Diode: switching; SMD; 250V; 200mA; 50ns; SOT23; Ufmax: 1.25V; 0.25W
Type of diode: switching
Mounting: SMD
Max. off-state voltage: 250V
Load current: 0.2A
Reverse recovery time: 50ns
Semiconductor structure: single diode
Case: SOT23
Max. forward voltage: 1.25V
Max. forward impulse current: 9A
Leakage current: 0.1mA
Power dissipation: 0.25W
Kind of package: reel; tape
Application: automotive industry
Features of semiconductor devices: fast switching
Produkt ist nicht verfügbar
Mindestbestellmenge: 25 Stücke
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PMEG4010BEA-QF PMEG4010BEA-Q.pdf
Hersteller: NEXPERIA
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SOD323; SMD; 40V; 1A; reel,tape
Type of diode: Schottky rectifying
Case: SOD323
Mounting: SMD
Max. off-state voltage: 40V
Load current: 1A
Semiconductor structure: single diode
Capacitance: 50pF
Max. forward voltage: 0.64V
Leakage current: 0.1mA
Max. forward impulse current: 10A
Kind of package: reel; tape
Application: automotive industry
Produkt ist nicht verfügbar
Mindestbestellmenge: 5 Stücke
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PMEG4010BEA-QX PMEG4010BEA-Q.pdf
Hersteller: NEXPERIA
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SOD323; SMD; 40V; 1A; reel,tape
Type of diode: Schottky rectifying
Case: SOD323
Mounting: SMD
Max. off-state voltage: 40V
Load current: 1A
Semiconductor structure: single diode
Capacitance: 50pF
Max. forward voltage: 0.64V
Leakage current: 0.1mA
Max. forward impulse current: 10A
Kind of package: reel; tape
Application: automotive industry
Produkt ist nicht verfügbar
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BC847BW-QX BC847XW-Q_SER.pdf
Hersteller: NEXPERIA
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 45V; 0.1A; 200mW; SC70,SOT323
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 45V
Collector current: 0.1A
Power dissipation: 0.2W
Case: SC70; SOT323
Current gain: 200...450
Mounting: SMD
Kind of package: reel; tape
Frequency: 100MHz
Application: automotive industry
Pulsed collector current: 0.2A
Produkt ist nicht verfügbar
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BC847BW,135 BC847XW_SER.pdf
Hersteller: NEXPERIA
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 45V; 0.1A; 200mW; SC70,SOT323
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 45V
Collector current: 0.1A
Power dissipation: 0.2W
Case: SC70; SOT323
Current gain: 200...450
Mounting: SMD
Kind of package: reel; tape
Frequency: 100MHz
Pulsed collector current: 0.2A
Produkt ist nicht verfügbar
Mindestbestellmenge: 10000 Stücke
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BC847CW-QX BC847XW-Q_SER.pdf
Hersteller: NEXPERIA
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 45V; 0.1A; 200mW; SC70,SOT323
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 45V
Collector current: 0.1A
Power dissipation: 0.2W
Case: SC70; SOT323
Current gain: 420...800
Mounting: SMD
Kind of package: reel; tape
Frequency: 100MHz
Application: automotive industry
Pulsed collector current: 0.2A
Produkt ist nicht verfügbar
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BC846BW-QF BC846XW-Q_SER.pdf
Hersteller: NEXPERIA
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 65V; 0.1A; 200mW; SC70,SOT323
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 65V
Collector current: 0.1A
Power dissipation: 0.2W
Case: SC70; SOT323
Pulsed collector current: 0.2A
Current gain: 200...450
Mounting: SMD
Kind of package: reel; tape
Frequency: 100MHz
Application: automotive industry
Produkt ist nicht verfügbar
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PBSS5160V,115 PBSS5160V.pdf
Hersteller: NEXPERIA
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 60V; 1A; SOT666
Type of transistor: PNP
Polarisation: bipolar
Collector-emitter voltage: 60V
Collector current: 1A
Case: SOT666
Mounting: SMD
Kind of package: reel; tape
Frequency: 220MHz
Current gain: 100...350
Produkt ist nicht verfügbar
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PMEG2010AEH,115 PMEG2010AEH_PMEG2010AET.pdf
Hersteller: NEXPERIA
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SOD123F; SMD; 20V; 1A; reel,tape
Type of diode: Schottky rectifying
Case: SOD123F
Mounting: SMD
Max. off-state voltage: 20V
Load current: 1A
Semiconductor structure: single diode
Max. forward voltage: 0.43V
Max. forward impulse current: 9A
Kind of package: reel; tape
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
PMEG2010AEH-QX PMEG2010AEH-Q.pdf
Hersteller: NEXPERIA
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SOD123F; SMD; 20V; 1A; reel,tape
Type of diode: Schottky rectifying
Case: SOD123F
Mounting: SMD
Max. off-state voltage: 20V
Load current: 1A
Semiconductor structure: single diode
Max. forward voltage: 0.43V
Max. forward impulse current: 9A
Kind of package: reel; tape
Application: automotive industry
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
PMEG2010BER,115 PMEG2010BER.pdf
Hersteller: NEXPERIA
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; CFP3,SOD123W; SMD; 20V; 1A; reel,tape
Type of diode: Schottky rectifying
Case: CFP3; SOD123W
Mounting: SMD
Max. off-state voltage: 20V
Load current: 1A
Semiconductor structure: single diode
Max. forward voltage: 0.45V
Max. forward impulse current: 50A
Kind of package: reel; tape
Power dissipation: 1.8W
Leakage current: 50µA
Capacitance: 185pF
Produkt ist nicht verfügbar
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PMEG2010BELD-QYL PMEG2010BELD-Q.pdf
Hersteller: NEXPERIA
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; DFN1006D-2,SOD882D; SMD; 20V; 1A
Type of diode: Schottky rectifying
Case: DFN1006D-2; SOD882D
Mounting: SMD
Max. off-state voltage: 20V
Load current: 1A
Semiconductor structure: single diode
Max. forward voltage: 0.49V
Max. forward impulse current: 6A
Kind of package: reel; tape
Reverse recovery time: 1.6ns
Leakage current: 50µA
Capacitance: 40pF
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
PMEG2010AEJ,115 PMEG2010AEJ.pdf
Hersteller: NEXPERIA
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SC90,SOD323F; SMD; 20V; 1A; reel,tape
Type of diode: Schottky rectifying
Case: SC90; SOD323F
Mounting: SMD
Max. off-state voltage: 20V
Load current: 1A
Semiconductor structure: single diode
Capacitance: 50pF
Max. forward voltage: 0.55V
Kind of package: reel; tape
Produkt ist nicht verfügbar
Mindestbestellmenge: 3000 Stücke
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PMEG2010BELD,315 PMEG2010BELD.pdf
Hersteller: NEXPERIA
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; DFN1006D-2,SOD882D; SMD; 20V; 1A
Type of diode: Schottky rectifying
Case: DFN1006D-2; SOD882D
Mounting: SMD
Max. off-state voltage: 20V
Load current: 1A
Semiconductor structure: single diode
Max. forward voltage: 0.49V
Max. forward impulse current: 6A
Kind of package: reel; tape
Capacitance: 40pF
Produkt ist nicht verfügbar
Mindestbestellmenge: 10000 Stücke
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PMEG2010BER-QX
Hersteller: NEXPERIA
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; CFP3,SOD123W; SMD; 20V; 1A; reel,tape
Type of diode: Schottky rectifying
Case: CFP3; SOD123W
Mounting: SMD
Max. off-state voltage: 20V
Load current: 1A
Semiconductor structure: single diode
Max. forward voltage: 0.45V
Max. forward impulse current: 50A
Kind of package: reel; tape
Power dissipation: 1.8W
Application: automotive industry
Leakage current: 50µA
Capacitance: 185pF
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
PMEG2010BEV,115 PMEG2010BEV.pdf
Hersteller: NEXPERIA
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SOT666; SMD; 20V; 1A; reel,tape
Type of diode: Schottky rectifying
Case: SOT666
Mounting: SMD
Max. off-state voltage: 20V
Load current: 1A
Semiconductor structure: single diode
Max. forward voltage: 0.5V
Max. forward impulse current: 10A
Kind of package: reel; tape
Capacitance: 80pF
Produkt ist nicht verfügbar
Mindestbestellmenge: 4000 Stücke
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PMDXB600UNELZ PMDXB600UNEL.pdf
Hersteller: NEXPERIA
Category: Multi channel transistors
Description: Transistor: N-MOSFET x2; Trench; unipolar; 20V; 400mA; Idm: 2.5A
Type of transistor: N-MOSFET x2
Technology: Trench
Polarisation: unipolar
Drain-source voltage: 20V
Drain current: 0.4A
Pulsed drain current: 2.5A
Case: DFN1010B-6; SOT1216
Gate-source voltage: ±8V
On-state resistance: 1Ω
Mounting: SMD
Gate charge: 0.7nC
Kind of package: reel; tape
Kind of channel: enhancement
Version: ESD
Produkt ist nicht verfügbar
Mindestbestellmenge: 5000 Stücke
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PMDXB600UNEZ PMDXB600UNE.pdf
Hersteller: NEXPERIA
Category: Multi channel transistors
Description: Transistor: N-MOSFET x2; Trench; unipolar; 20V; 400mA; Idm: 2.5A
Type of transistor: N-MOSFET x2
Technology: Trench
Polarisation: unipolar
Drain-source voltage: 20V
Drain current: 0.4A
Pulsed drain current: 2.5A
Case: DFN1010B-6; SOT1216
Gate-source voltage: ±8V
On-state resistance: 1Ω
Mounting: SMD
Gate charge: 0.7nC
Kind of package: reel; tape
Kind of channel: enhancement
Version: ESD
Produkt ist nicht verfügbar
Mindestbestellmenge: 5000 Stücke
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BZV85-C5V1,133 BZV85-C10.113.pdf
Hersteller: NEXPERIA
Category: THT Zener diodes
Description: Diode: Zener; 1/1.3W; 5.1V; DO41; single diode; 500mA; Ufmax: 1V
Type of diode: Zener
Power dissipation: 1/1.3W
Zener voltage: 5.1V
Case: DO41
Mounting: THT
Tolerance: ±5%
Semiconductor structure: single diode
Max. load current: 0.5A
Max. forward voltage: 1V
Kind of package: Ammo Pack
auf Bestellung 7605 Stücke:
Lieferzeit 14-21 Tag (e)
Mindestbestellmenge: 10 Stücke
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BAS20-QR BAS20-Q.pdf
Hersteller: NEXPERIA
Category: SMD universal diodes
Description: Diode: switching; SMD; 200V; 200mA; 50ns; SOT23; Ufmax: 1.25V; 0.25W
Type of diode: switching
Mounting: SMD
Max. off-state voltage: 200V
Load current: 0.2A
Reverse recovery time: 50ns
Semiconductor structure: single diode
Features of semiconductor devices: fast switching
Case: SOT23
Max. forward voltage: 1.25V
Max. forward impulse current: 9A
Power dissipation: 0.25W
Kind of package: reel; tape
Application: automotive industry
Leakage current: 0.1mA
auf Bestellung 1350 Stücke:
Lieferzeit 14-21 Tag (e)
Mindestbestellmenge: 25 Stücke
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BAS20-QVL BAS20-Q.pdf
Hersteller: NEXPERIA
Category: SMD universal diodes
Description: Diode: switching; SMD; 200V; 200mA; 50ns; SOT23; Ufmax: 1.25V; 0.25W
Type of diode: switching
Mounting: SMD
Max. off-state voltage: 200V
Load current: 0.2A
Reverse recovery time: 50ns
Semiconductor structure: single diode
Features of semiconductor devices: fast switching
Case: SOT23
Max. forward voltage: 1.25V
Max. forward impulse current: 9A
Power dissipation: 0.25W
Kind of package: reel; tape
Application: automotive industry
Leakage current: 0.1mA
Produkt ist nicht verfügbar
Mindestbestellmenge: 25 Stücke
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BAW56W-QF BAW56W-Q.pdf
Hersteller: NEXPERIA
Category: SMD universal diodes
Description: Diode: switching; SMD; 90V; 150mA; 4ns; SOT323; Ufmax: 1.25V; Ifsm: 4A
Type of diode: switching
Mounting: SMD
Max. off-state voltage: 90V
Load current: 0.15A
Reverse recovery time: 4ns
Semiconductor structure: common anode; double
Case: SOT323
Max. forward voltage: 1.25V
Max. forward impulse current: 4A
Leakage current: 0.15mA
Power dissipation: 0.2W
Kind of package: reel; tape
Application: automotive industry
Features of semiconductor devices: fast switching
Produkt ist nicht verfügbar
Mindestbestellmenge: 25 Stücke
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BAS70W,115 BAS70_SER.pdf
Hersteller: NEXPERIA
Category: SMD Schottky diodes
Description: Diode: Schottky switching; SOT323; SMD; 70V; 70mA; reel,tape
Type of diode: Schottky switching
Case: SOT323
Mounting: SMD
Max. off-state voltage: 70V
Load current: 70mA
Semiconductor structure: single diode
Max. forward voltage: 1V
Max. forward impulse current: 0.1A
Kind of package: reel; tape
Produkt ist nicht verfügbar
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BAS70W-QX
Hersteller: NEXPERIA
Category: SMD Schottky diodes
Description: Diode: Schottky switching; SOT323; SMD; 70V; 70mA; reel,tape
Type of diode: Schottky switching
Case: SOT323
Mounting: SMD
Max. off-state voltage: 70V
Load current: 70mA
Semiconductor structure: single diode
Max. forward voltage: 1V
Max. forward impulse current: 0.1A
Kind of package: reel; tape
Application: automotive industry
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
BAT54J-QX BAT54J-Q.pdf
Hersteller: NEXPERIA
Category: SMD Schottky diodes
Description: Diode: Schottky switching; SC90,SOD323F; SMD; 30V; 0.2A; reel,tape
Type of diode: Schottky switching
Case: SC90; SOD323F
Mounting: SMD
Max. off-state voltage: 30V
Load current: 0.2A
Semiconductor structure: single diode
Max. forward voltage: 0.8V
Max. forward impulse current: 0.6A
Kind of package: reel; tape
Power dissipation: 0.55W
Application: automotive industry
Leakage current: 2µA
Capacitance: 10pF
Produkt ist nicht verfügbar
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NZH22C,115 NZH_SER.pdf
Hersteller: NEXPERIA
Category: SMD Zener diodes
Description: Diode: Zener; 0.5W; 22V; SMD; SOD123F; reel,tape; Ifmax: 250mA
Type of diode: Zener
Power dissipation: 0.5W
Zener voltage: 22V
Mounting: SMD
Tolerance: ±2.5%
Max. forward voltage: 0.9V
Case: SOD123F
Kind of package: reel; tape
Max. load current: 0.25A
Semiconductor structure: single diode
Produkt ist nicht verfügbar
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BUK6D120-60PX BUK6D120-60P.pdf
Hersteller: NEXPERIA
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; Trench; unipolar; -60V; -5.1A; Idm: -32A; 15W
Type of transistor: P-MOSFET
Technology: Trench
Polarisation: unipolar
Drain-source voltage: -60V
Drain current: -5.1A
Pulsed drain current: -32A
Power dissipation: 15W
Case: DFN2020MD-6; SOT1220
On-state resistance: 256mΩ
Mounting: SMD
Gate charge: 18nC
Kind of package: reel; tape
Kind of channel: enhancement
Application: automotive industry
Produkt ist nicht verfügbar
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74HCT597D,653 74HCT597D,653.pdf
Hersteller: NEXPERIA
Category: Shift registers
Description: IC: digital; 8bit,shift register,parallel in,serial output
Type of integrated circuit: digital
Kind of integrated circuit: 8bit; parallel in; serial output; shift register
Technology: CMOS; TTL
Mounting: SMD
Case: SO16
Family: HCT
Kind of package: reel; tape
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
74HCT597PWJ 74HCT597PWJ.pdf
Hersteller: NEXPERIA
Category: Shift registers
Description: IC: digital; 8bit,D flip-flop,shift register; Ch: 1; TTL; SMD; HCT
Type of integrated circuit: digital
Kind of integrated circuit: 8bit; D flip-flop; shift register
Technology: TTL
Mounting: SMD
Case: TSSOP16
Family: HCT
Operating temperature: -40...125°C
Number of inputs: 13
Supply voltage: 4.5...5.5V DC
Kind of package: reel; tape
Number of channels: 1
Produkt ist nicht verfügbar
Mindestbestellmenge: 5000 Stücke
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74LVC1G58GW,125 74LVC1G58.pdf
Hersteller: NEXPERIA
Category: Gates, inverters
Description: IC: digital; configurable,multiple-function; IN: 3; CMOS,TTL; SMD
Type of integrated circuit: digital
Kind of gate: configurable; multiple-function
Number of inputs: 3
Mounting: SMD
Case: SC88
Supply voltage: 1.65...5.5V DC
Operating temperature: -40...125°C
Kind of package: reel; tape
Kind of input: with Schmitt trigger
Family: LVC
Manufacturer series: Mini Logic
Technology: CMOS; TTL
auf Bestellung 337 Stücke:
Lieferzeit 14-21 Tag (e)
Im Einkaufswagen  Stück im Wert von  UAH
74LVC1G58GM,115 74LVC1G58.pdf
Hersteller: NEXPERIA
Category: Gates, inverters
Description: IC: digital; buffer,inverter,Schmitt trigger; Ch: 1; IN: 3; SMD
Type of integrated circuit: digital
Kind of gate: AND; configurable; multiple-function; NAND; NOR; OR; XNOR
Number of inputs: 3
Mounting: SMD
Case: XSON6
Supply voltage: 1.65...5.5V DC
Operating temperature: -40...125°C
Kind of package: reel; tape
Kind of input: with Schmitt trigger
Family: LVC
Manufacturer series: Mini Logic
Technology: CMOS; TTL
Kind of integrated circuit: buffer; inverter; Schmitt trigger
Number of channels: 1
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74LVC1G58GS,132 74LVC1G58.pdf
Hersteller: NEXPERIA
Category: Gates, inverters
Description: IC: digital; buffer,inverter,Schmitt trigger; Ch: 1; IN: 3; SMD
Type of integrated circuit: digital
Kind of gate: AND; configurable; multiple-function; NAND; NOR; OR; XNOR
Number of inputs: 3
Mounting: SMD
Case: XSON6
Supply voltage: 1.65...5.5V DC
Operating temperature: -40...125°C
Kind of package: reel; tape
Kind of input: with Schmitt trigger
Family: LVC
Manufacturer series: Mini Logic
Technology: CMOS; TTL
Kind of integrated circuit: buffer; inverter; Schmitt trigger
Number of channels: 1
Produkt ist nicht verfügbar
Mindestbestellmenge: 5000 Stücke
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BAS70XY,115 BAS70XY.pdf
Hersteller: NEXPERIA
Category: SMD Schottky diodes
Description: Diode: Schottky switching; SC88,SOT363,TSSOP6; SMD; 70V; 70mA
Mounting: SMD
Case: SC88; SOT363; TSSOP6
Kind of package: reel; tape
Max. off-state voltage: 70V
Load current: 70mA
Semiconductor structure: double series x2
Capacitance: 2pF
Type of diode: Schottky switching
Max. forward impulse current: 0.1A
Max. forward voltage: 1V
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NX3008PBKS,115 NX3008PBKS.pdf
Hersteller: NEXPERIA
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -30V; -0.2A; 80mW
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -30V
Drain current: -200mA
Power dissipation: 80mW
Case: SC88; SOT363; TSSOP6
Gate-source voltage: ±8V
On-state resistance: 4.1Ω
Mounting: SMD
Gate charge: 0.72nC
Kind of package: reel; tape
Kind of channel: enhancement
Produkt ist nicht verfügbar
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NX3008NBK,215 NX3008NBK.pdf
Hersteller: NEXPERIA
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 0.4A; 350mW; SOT23,TO236AB
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 0.4A
Power dissipation: 0.35W
Case: SOT23; TO236AB
Gate-source voltage: ±8V
On-state resistance: 1.4Ω
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
Gate charge: 0.68nC
auf Bestellung 5506 Stücke:
Lieferzeit 14-21 Tag (e)
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NX3008NBKS,115 NX3008NBKS.pdf
Hersteller: NEXPERIA
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 0.35A; 280mW
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 0.35A
Power dissipation: 0.28W
Case: SC88; SOT363; TSSOP6
Gate-source voltage: ±8V
On-state resistance: 1.4Ω
Mounting: SMD
Gate charge: 0.68nC
Kind of package: reel; tape
Kind of channel: enhancement
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NX138AKVL NX138AK.pdf
Hersteller: NEXPERIA
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; Trench; unipolar; 60V; 0.12A; Idm: 0.765A
Kind of channel: enhancement
Mounting: SMD
Type of transistor: N-MOSFET
Kind of package: reel; tape
Case: SOT23; TO236AB
Technology: Trench
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 0.12A
Gate charge: 0.9nC
Power dissipation: 0.265W
On-state resistance: 10Ω
Pulsed drain current: 0.765A
Gate-source voltage: ±20V
auf Bestellung 8774 Stücke:
Lieferzeit 14-21 Tag (e)
Mindestbestellmenge: 20 Stücke
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BAS70XY-QX
Hersteller: NEXPERIA
Category: SMD Schottky diodes
Description: Diode: Schottky switching; SC88,SOT363,TSSOP6; SMD; 70V; 70mA
Type of diode: Schottky switching
Case: SC88; SOT363; TSSOP6
Mounting: SMD
Max. off-state voltage: 70V
Load current: 70mA
Semiconductor structure: double series x2
Max. forward voltage: 1V
Kind of package: reel; tape
Produkt ist nicht verfügbar
Mindestbestellmenge: 5 Stücke
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PSMN040-100MSEX PSMN040-100MSE.pdf
Hersteller: NEXPERIA
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 30A; Idm: 121A; 91W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 30A
Pulsed drain current: 121A
Power dissipation: 91W
Case: LFPAK33; SOT1210
Gate-source voltage: ±20V
On-state resistance: 29.4mΩ
Mounting: SMD
Gate charge: 30nC
Kind of package: reel; tape
Kind of channel: enhancement
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH