| Foto | Bezeichnung | Hersteller | Beschreibung |
Verfügbarkeit |
Preis ohne MwSt |
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| BUK9M14-40EX | NEXPERIA |
 Category: SMD N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 40V; 31A; Idm: 176A; 55W Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 40V Drain current: 31A Pulsed drain current: 176A Power dissipation: 55W Case: LFPAK33; SOT1210 Gate-source voltage: ±10V On-state resistance: 28mΩ Mounting: SMD Gate charge: 11.3nC Kind of package: reel; tape Kind of channel: enhanced Application: automotive industry Anzahl je Verpackung: 1 Stücke |
Produkt ist nicht verfügbar |
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| BUK9M15-40HX | NEXPERIA |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 40V; 27.4A; Idm: 155A; 44W Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 40V Drain current: 27.4A Pulsed drain current: 155A Power dissipation: 44W Case: LFPAK33; SOT1210 On-state resistance: 36.9mΩ Mounting: SMD Gate charge: 16.2nC Kind of package: reel; tape Kind of channel: enhanced Application: automotive industry Anzahl je Verpackung: 1 Stücke |
Produkt ist nicht verfügbar |
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| BUK9M15-60EX | NEXPERIA |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 60V; 33A; Idm: 188A; 75W Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 60V Drain current: 33A Pulsed drain current: 188A Power dissipation: 75W Case: LFPAK33; SOT1210 Gate-source voltage: ±10V On-state resistance: 34mΩ Mounting: SMD Gate charge: 17nC Kind of package: reel; tape Kind of channel: enhanced Application: automotive industry Anzahl je Verpackung: 1 Stücke |
Produkt ist nicht verfügbar |
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| BUK9M156-100EX | NEXPERIA |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 100V; 6.5A; Idm: 37A; 36W Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 100V Drain current: 6.5A Pulsed drain current: 37A Power dissipation: 36W Case: LFPAK33; SOT1210 Gate-source voltage: ±10V On-state resistance: 0.42Ω Mounting: SMD Gate charge: 7.4nC Kind of package: reel; tape Kind of channel: enhanced Application: automotive industry Anzahl je Verpackung: 1 Stücke |
Produkt ist nicht verfügbar |
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| BUK9M17-30EX | NEXPERIA |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 30V; 26A; Idm: 148A; 44W Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 30V Drain current: 26A Pulsed drain current: 148A Power dissipation: 44W Case: LFPAK33; SOT1210 Gate-source voltage: ±10V On-state resistance: 32mΩ Mounting: SMD Gate charge: 8nC Kind of package: reel; tape Kind of channel: enhanced Application: automotive industry Anzahl je Verpackung: 1 Stücke |
Produkt ist nicht verfügbar |
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| BUK9M19-60EX | NEXPERIA |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 60V; 26.8A; Idm: 152A; 62W Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 60V Drain current: 26.8A Pulsed drain current: 152A Power dissipation: 62W Case: LFPAK33; SOT1210 On-state resistance: 43mΩ Mounting: SMD Gate charge: 13.8nC Kind of package: reel; tape Kind of channel: enhanced Application: automotive industry Anzahl je Verpackung: 1 Stücke |
Produkt ist nicht verfügbar |
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| BUK9M20-40HX | NEXPERIA |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 40V; 22A; Idm: 125A; 38W Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 40V Drain current: 22A Pulsed drain current: 125A Power dissipation: 38W Case: LFPAK33; SOT1210 On-state resistance: 48.5mΩ Mounting: SMD Gate charge: 12.6nC Kind of package: reel; tape Kind of channel: enhanced Application: automotive industry Anzahl je Verpackung: 1 Stücke |
Produkt ist nicht verfügbar |
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| BUK9M23-80EX | NEXPERIA |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 80V; 26A; Idm: 148A; 79W Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 80V Drain current: 26A Pulsed drain current: 148A Power dissipation: 79W Case: LFPAK33; SOT1210 Gate-source voltage: ±10V On-state resistance: 58mΩ Mounting: SMD Gate charge: 20nC Kind of package: reel; tape Kind of channel: enhanced Application: automotive industry Anzahl je Verpackung: 1 Stücke |
Produkt ist nicht verfügbar |
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| BUK9M24-60EX | NEXPERIA |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 60V; 22.4A; Idm: 127A; 55W Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 60V Drain current: 22.4A Pulsed drain current: 127A Power dissipation: 55W Case: LFPAK33; SOT1210 On-state resistance: 54mΩ Mounting: SMD Gate charge: 12.4nC Kind of package: reel; tape Kind of channel: enhanced Application: automotive industry Anzahl je Verpackung: 1 Stücke |
Produkt ist nicht verfügbar |
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| BUK9M28-80EX | NEXPERIA |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 80V; 23.1A; Idm: 131A; 75W Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 80V Drain current: 23.1A Pulsed drain current: 131A Power dissipation: 75W Case: LFPAK33; SOT1210 On-state resistance: 70mΩ Mounting: SMD Gate charge: 16.7nC Kind of package: reel; tape Kind of channel: enhanced Application: automotive industry Anzahl je Verpackung: 1 Stücke |
Produkt ist nicht verfügbar |
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| BUK9M35-80EX | NEXPERIA |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 80V; 19A; Idm: 106A; 62W Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 80V Drain current: 19A Pulsed drain current: 106A Power dissipation: 62W Case: LFPAK33; SOT1210 On-state resistance: 88mΩ Mounting: SMD Gate charge: 13.5nC Kind of package: reel; tape Kind of channel: enhanced Application: automotive industry Anzahl je Verpackung: 1 Stücke |
Produkt ist nicht verfügbar |
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| BUK9M3R3-40HX | NEXPERIA |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 40V; 80A; Idm: 475A; 101W Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 40V Drain current: 80A Pulsed drain current: 475A Power dissipation: 101W Case: LFPAK33; SOT1210 On-state resistance: 9.2mΩ Mounting: SMD Gate charge: 55nC Kind of package: reel; tape Kind of channel: enhanced Application: automotive industry Anzahl je Verpackung: 1 Stücke |
Produkt ist nicht verfügbar |
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| BUK9M42-60EX | NEXPERIA |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 60V; 15.2A; Idm: 86A; 44W Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 60V Drain current: 15.2A Pulsed drain current: 86A Power dissipation: 44W Case: LFPAK33; SOT1210 On-state resistance: 95mΩ Mounting: SMD Gate charge: 8.3nC Kind of package: reel; tape Kind of channel: enhanced Application: automotive industry Anzahl je Verpackung: 1 Stücke |
Produkt ist nicht verfügbar |
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| BUK9M43-100EX | NEXPERIA |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 100V; 17.6A; Idm: 99A; 75W Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 100V Drain current: 17.6A Pulsed drain current: 99A Power dissipation: 75W Case: LFPAK33; SOT1210 On-state resistance: 121mΩ Mounting: SMD Gate charge: 20.2nC Kind of package: reel; tape Kind of channel: enhanced Application: automotive industry Anzahl je Verpackung: 1 Stücke |
Produkt ist nicht verfügbar |
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| BUK9M4R3-40HX | NEXPERIA |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 40V; 69A; Idm: 392A; 90W Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 40V Drain current: 69A Pulsed drain current: 392A Power dissipation: 90W Case: LFPAK33; SOT1210 On-state resistance: 12mΩ Mounting: SMD Gate charge: 43nC Kind of package: reel; tape Kind of channel: enhanced Application: automotive industry Anzahl je Verpackung: 1 Stücke |
Produkt ist nicht verfügbar |
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| BUK9M5R0-40HX | NEXPERIA |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 40V; 61.7A; Idm: 349A; 83W Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 40V Drain current: 61.7A Pulsed drain current: 349A Power dissipation: 83W Case: LFPAK33; SOT1210 On-state resistance: 14mΩ Mounting: SMD Gate charge: 39nC Kind of package: reel; tape Kind of channel: enhanced Application: automotive industry Anzahl je Verpackung: 1 Stücke |
Produkt ist nicht verfügbar |
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| BUK9M5R2-30EX | NEXPERIA |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 30V; 63A; Idm: 358A; 79W Mounting: SMD Case: LFPAK33; SOT1210 Kind of package: reel; tape Power dissipation: 79W Application: automotive industry Polarisation: unipolar Gate charge: 22.5nC Kind of channel: enhanced Gate-source voltage: ±10V Pulsed drain current: 358A Drain-source voltage: 30V Drain current: 63A On-state resistance: 9.8mΩ Type of transistor: N-MOSFET Anzahl je Verpackung: 1 Stücke |
Produkt ist nicht verfügbar |
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| BUK9M67-60ELX | NEXPERIA |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 60V; 15A; Idm: 85A; 45W Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 60V Drain current: 15A Pulsed drain current: 85A Power dissipation: 45W Case: LFPAK33; SOT1210 Gate-source voltage: ±10V On-state resistance: 148mΩ Mounting: SMD Gate charge: 19nC Kind of package: reel; tape Kind of channel: enhanced Application: automotive industry Anzahl je Verpackung: 1 Stücke |
Produkt ist nicht verfügbar |
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| BUK9M6R0-40HX | NEXPERIA |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 40V; 50A; Idm: 311A; 70W Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 40V Drain current: 50A Pulsed drain current: 311A Power dissipation: 70W Case: LFPAK33; SOT1210 On-state resistance: 15mΩ Mounting: SMD Gate charge: 36nC Kind of package: reel; tape Kind of channel: enhanced Application: automotive industry Anzahl je Verpackung: 1 Stücke |
Produkt ist nicht verfügbar |
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| BUK9M6R6-30EX | NEXPERIA |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 30V; 54.7A; Idm: 309A; 75W Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 30V Drain current: 54.7A Pulsed drain current: 309A Power dissipation: 75W Case: LFPAK33; SOT1210 Gate-source voltage: ±10V On-state resistance: 13mΩ Mounting: SMD Gate charge: 18nC Kind of package: reel; tape Kind of channel: enhanced Application: automotive industry Anzahl je Verpackung: 1 Stücke |
Produkt ist nicht verfügbar |
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| BUK9M6R7-40HX | NEXPERIA |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 40V; 50A; Idm: 282A; 65W Application: automotive industry Type of transistor: N-MOSFET Power dissipation: 65W Polarisation: unipolar Kind of package: reel; tape Gate charge: 31nC Kind of channel: enhanced Pulsed drain current: 282A Mounting: SMD Case: LFPAK33; SOT1210 Drain-source voltage: 40V Drain current: 50A On-state resistance: 16.7mΩ Anzahl je Verpackung: 1 Stücke |
Produkt ist nicht verfügbar |
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| BUK9M7R2-40EX | NEXPERIA |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 40V; 52A; Idm: 296A; 79W Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 40V Drain current: 52A Pulsed drain current: 296A Power dissipation: 79W Case: LFPAK33; SOT1210 Gate-source voltage: ±10V On-state resistance: 14.5mΩ Mounting: SMD Gate charge: 19.7nC Kind of package: reel; tape Kind of channel: enhanced Application: automotive industry Anzahl je Verpackung: 1 Stücke |
Produkt ist nicht verfügbar |
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| BUK9M85-60EX | NEXPERIA |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 60V; 9A; Idm: 51A; 31W Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 60V Drain current: 9A Pulsed drain current: 51A Power dissipation: 31W Case: LFPAK33; SOT1210 On-state resistance: 192mΩ Mounting: SMD Gate charge: 4.4nC Kind of package: reel; tape Kind of channel: enhanced Application: automotive industry Anzahl je Verpackung: 1 Stücke |
Produkt ist nicht verfügbar |
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| BUK9M8R5-40HX | NEXPERIA |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 40V; 40A; Idm: 239A; 59W Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 40V Drain current: 40A Pulsed drain current: 239A Power dissipation: 59W Case: LFPAK33; SOT1210 On-state resistance: 21.4mΩ Mounting: SMD Gate charge: 28nC Kind of package: reel; tape Kind of channel: enhanced Application: automotive industry Anzahl je Verpackung: 1 Stücke |
Produkt ist nicht verfügbar |
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| BUK9M9R1-40EX | NEXPERIA |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 40V; 45.5A; Idm: 258A; 75W Power dissipation: 75W Case: LFPAK33; SOT1210 Mounting: SMD Kind of package: reel; tape Application: automotive industry On-state resistance: 18.1mΩ Drain current: 45.5A Polarisation: unipolar Drain-source voltage: 40V Type of transistor: N-MOSFET Gate charge: 16.2nC Kind of channel: enhanced Gate-source voltage: ±10V Pulsed drain current: 258A Anzahl je Verpackung: 1 Stücke |
Produkt ist nicht verfügbar |
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| BUK9M9R5-40HX | NEXPERIA |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 40V; 38.5A; Idm: 218A; 55W Application: automotive industry Mounting: SMD Drain-source voltage: 40V Drain current: 38.5A On-state resistance: 23.3mΩ Type of transistor: N-MOSFET Power dissipation: 55W Polarisation: unipolar Kind of package: reel; tape Case: LFPAK33; SOT1210 Gate charge: 24nC Kind of channel: enhanced Pulsed drain current: 218A Anzahl je Verpackung: 1 Stücke |
Produkt ist nicht verfügbar |
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| BUK9Y09-40B,115 | NEXPERIA |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 40V; 53A; Idm: 300A; 105.3W Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 40V Drain current: 53A Pulsed drain current: 300A Power dissipation: 105.3W Case: LFPAK56; PowerSO8; SOT669 Gate-source voltage: ±15V On-state resistance: 19mΩ Mounting: SMD Gate charge: 30nC Kind of package: reel; tape Kind of channel: enhanced Application: automotive industry Anzahl je Verpackung: 1 Stücke |
Produkt ist nicht verfügbar |
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| BUK9Y104-100B,115 | NEXPERIA |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 100V; 10.48A; Idm: 59A; 59W Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 100V Drain current: 10.48A Pulsed drain current: 59A Power dissipation: 59W Case: LFPAK56; PowerSO8; SOT669 Gate-source voltage: ±15V On-state resistance: 0.27Ω Mounting: SMD Gate charge: 11nC Kind of package: reel; tape Kind of channel: enhanced Application: automotive industry Anzahl je Verpackung: 1 Stücke |
Produkt ist nicht verfügbar |
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| BUK9Y11-80EX | NEXPERIA |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 80V; 59.3A; Idm: 336A; 194W Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 80V Drain current: 59.3A Pulsed drain current: 336A Power dissipation: 194W Case: LFPAK56; PowerSO8; SOT669 Gate-source voltage: ±10V On-state resistance: 27.6mΩ Mounting: SMD Gate charge: 44.2nC Kind of package: reel; tape Kind of channel: enhanced Application: automotive industry Anzahl je Verpackung: 1 Stücke |
Produkt ist nicht verfügbar |
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| BUK9Y113-100E,115 | NEXPERIA |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 100V; 8.5A; Idm: 48A; 45W Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 100V Drain current: 8.5A Pulsed drain current: 48A Power dissipation: 45W Case: LFPAK56; PowerSO8; SOT669 Gate-source voltage: ±10V On-state resistance: 312mΩ Mounting: SMD Gate charge: 8.4nC Kind of package: reel; tape Kind of channel: enhanced Application: automotive industry Anzahl je Verpackung: 1 Stücke |
Produkt ist nicht verfügbar |
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| BUK9Y12-40E,115 | NEXPERIA |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 40V; 36.7A; Idm: 208A; 65W Mounting: SMD Case: LFPAK56; PowerSO8; SOT669 Kind of package: reel; tape Drain-source voltage: 40V Drain current: 36.7A On-state resistance: 24.1mΩ Type of transistor: N-MOSFET Application: automotive industry Power dissipation: 65W Polarisation: unipolar Gate charge: 9.8nC Kind of channel: enhanced Gate-source voltage: ±10V Pulsed drain current: 208A Anzahl je Verpackung: 1 Stücke |
Produkt ist nicht verfügbar |
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| BUK9Y15-100E,115 | NEXPERIA |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 100V; 49A; Idm: 274A; 195W Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 100V Drain current: 49A Pulsed drain current: 274A Power dissipation: 195W Case: LFPAK56; PowerSO8; SOT669 Gate-source voltage: ±10V On-state resistance: 41.4mΩ Mounting: SMD Gate charge: 45.8nC Kind of package: reel; tape Kind of channel: enhanced Application: automotive industry Anzahl je Verpackung: 1 Stücke |
Produkt ist nicht verfügbar |
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BUK9Y19-75B,115 | NEXPERIA |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 75V; 34.1A; Idm: 192A; 106W Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 75V Drain current: 34.1A Pulsed drain current: 192A Power dissipation: 106W Case: LFPAK56; PowerSO8; SOT669 Gate-source voltage: ±15V On-state resistance: 48mΩ Mounting: SMD Gate charge: 30nC Kind of package: reel; tape Kind of channel: enhanced Application: automotive industry Anzahl je Verpackung: 1 Stücke |
auf Bestellung 1500 Stücke: Lieferzeit 7-14 Tag (e) |
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| BUK9Y1R3-40HX | NEXPERIA |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 40V; 190A; Idm: 600A; 395W Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 40V Drain current: 190A Pulsed drain current: 600A Power dissipation: 395W Case: LFPAK56; PowerSO8; SOT669 On-state resistance: 3.9mΩ Mounting: SMD Gate charge: 139nC Kind of package: reel; tape Kind of channel: enhanced Application: automotive industry Anzahl je Verpackung: 1500 Stücke |
Produkt ist nicht verfügbar |
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| BUK9Y1R6-40HX | NEXPERIA |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 40V; 120A; Idm: 600A; 294W Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 40V Drain current: 120A Pulsed drain current: 600A Power dissipation: 294W Case: LFPAK56; PowerSO8; SOT669 On-state resistance: 4.8mΩ Mounting: SMD Gate charge: 107.8nC Kind of package: reel; tape Kind of channel: enhanced Application: automotive industry Anzahl je Verpackung: 1500 Stücke |
Produkt ist nicht verfügbar |
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| BUK9Y1R9-40HX | NEXPERIA |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 40V; 120A; Idm: 600A; 217W Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 40V Drain current: 120A Pulsed drain current: 600A Power dissipation: 217W Case: LFPAK56; PowerSO8; SOT669 On-state resistance: 5.7mΩ Mounting: SMD Gate charge: 93nC Kind of package: reel; tape Kind of channel: enhanced Application: automotive industry Anzahl je Verpackung: 1500 Stücke |
Produkt ist nicht verfügbar |
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| BUK9Y22-100E,115 | NEXPERIA |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 100V; 35A; Idm: 197A; 147W Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 100V Drain current: 35A Pulsed drain current: 197A Power dissipation: 147W Case: LFPAK56; PowerSO8; SOT669 Gate-source voltage: ±10V On-state resistance: 60.7mΩ Mounting: SMD Gate charge: 35.8nC Kind of package: reel; tape Kind of channel: enhanced Application: automotive industry Anzahl je Verpackung: 1 Stücke |
Produkt ist nicht verfügbar |
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| BUK9Y2R4-40HX | NEXPERIA |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 40V; 120A; Idm: 600A; 163W Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 40V Drain current: 120A Pulsed drain current: 600A Power dissipation: 163W Case: LFPAK56; PowerSO8; SOT669 On-state resistance: 7mΩ Mounting: SMD Gate charge: 78.2nC Kind of package: reel; tape Kind of channel: enhanced Application: automotive industry Anzahl je Verpackung: 1500 Stücke |
Produkt ist nicht verfügbar |
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| BUK9Y2R8-40HX | NEXPERIA |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 40V; 120A; Idm: 600A; 172W Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 40V Drain current: 120A Pulsed drain current: 600A Power dissipation: 172W Case: LFPAK56; PowerSO8; SOT669 On-state resistance: 8.6mΩ Mounting: SMD Gate charge: 62nC Kind of package: reel; tape Kind of channel: enhanced Application: automotive industry Anzahl je Verpackung: 1500 Stücke |
Produkt ist nicht verfügbar |
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| BUK9Y3R5-40E,115 | NEXPERIA |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 40V; 100A; Idm: 591A; 167W Application: automotive industry On-state resistance: 7.6mΩ Mounting: SMD Pulsed drain current: 591A Power dissipation: 167W Gate charge: 30.2nC Polarisation: unipolar Drain current: 100A Kind of channel: enhanced Drain-source voltage: 40V Type of transistor: N-MOSFET Gate-source voltage: ±10V Kind of package: reel; tape Case: LFPAK56; PowerSO8; SOT669 Anzahl je Verpackung: 1 Stücke |
Produkt ist nicht verfügbar |
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| BUK9Y4R8-60E,115 | NEXPERIA |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 60V; 100A; Idm: 593A; 238W Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 60V Drain current: 100A Pulsed drain current: 593A Power dissipation: 238W Case: LFPAK56; PowerSO8; SOT669 Gate-source voltage: ±10V On-state resistance: 10.8mΩ Mounting: SMD Gate charge: 54.8nC Kind of package: reel; tape Kind of channel: enhanced Application: automotive industry Anzahl je Verpackung: 1500 Stücke |
Produkt ist nicht verfügbar |
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| BUK9Y6R5-40HX | NEXPERIA |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 40V; 50A; Idm: 284A; 64W Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 40V Drain current: 50A Pulsed drain current: 284A Power dissipation: 64W Case: LFPAK56; PowerSO8; SOT669 Gate-source voltage: ±20V On-state resistance: 16.7mΩ Mounting: SMD Gate charge: 29nC Kind of package: reel; tape Kind of channel: enhanced Application: automotive industry Anzahl je Verpackung: 1 Stücke |
Produkt ist nicht verfügbar |
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| BUK9Y72-80E,115 | NEXPERIA |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 80V; 10.7A; Idm: 61A; 45W Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 80V Drain current: 10.7A Pulsed drain current: 61A Power dissipation: 45W Case: LFPAK56; PowerSO8; SOT669 Gate-source voltage: ±10V On-state resistance: 196mΩ Mounting: SMD Gate charge: 7.9nC Kind of package: reel; tape Kind of channel: enhanced Application: automotive industry Anzahl je Verpackung: 1 Stücke |
Produkt ist nicht verfügbar |
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| BUK9Y7R0-60ELX | NEXPERIA |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 60V; 108A; Idm: 612A; 238.4W Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 60V Drain current: 108A Pulsed drain current: 612A Power dissipation: 238.4W Case: LFPAK56; PowerSO8; SOT669 Gate-source voltage: ±10V On-state resistance: 15.4mΩ Mounting: SMD Gate charge: 152nC Kind of package: reel; tape Kind of channel: enhanced Application: automotive industry Anzahl je Verpackung: 1500 Stücke |
Produkt ist nicht verfügbar |
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| BUK9Y7R2-60E,115 | NEXPERIA |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 60V; 72A; Idm: 405A; 167W Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 60V Drain current: 72A Pulsed drain current: 405A Power dissipation: 167W Case: LFPAK56; PowerSO8; SOT669 Gate-source voltage: ±10V On-state resistance: 16.3mΩ Mounting: SMD Gate charge: 35nC Kind of package: reel; tape Kind of channel: enhanced Application: automotive industry Anzahl je Verpackung: 1 Stücke |
Produkt ist nicht verfügbar |
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| BUK9Y7R6-40E,115 | NEXPERIA |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 40V; 56A; Idm: 315A; 95W Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 40V Drain current: 56A Pulsed drain current: 315A Power dissipation: 95W Case: LFPAK56; PowerSO8; SOT669 Gate-source voltage: ±10V On-state resistance: 7.6mΩ Mounting: SMD Gate charge: 5.5nC Kind of package: reel; tape Kind of channel: enhanced Features of semiconductor devices: logic level Application: automotive industry Anzahl je Verpackung: 1 Stücke |
Produkt ist nicht verfügbar |
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| BUK9Y8R5-80EX | NEXPERIA |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 80V; 75A; Idm: 423A; 238W Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 80V Drain current: 75A Pulsed drain current: 423A Power dissipation: 238W Case: LFPAK56; PowerSO8; SOT669 Gate-source voltage: ±10V On-state resistance: 21.3mΩ Mounting: SMD Gate charge: 54.7nC Kind of package: reel; tape Kind of channel: enhanced Application: automotive industry Anzahl je Verpackung: 1500 Stücke |
Produkt ist nicht verfügbar |
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BZA456A,115 | NEXPERIA |
Category: Transil diodes - arrays Description: Diode: TVS array; 3.75A; 24W; quadruple,common anode; reel,tape Type of diode: TVS array Max. forward impulse current: 3.75A Peak pulse power dissipation: 24W Semiconductor structure: common anode; quadruple Mounting: SMD Case: SC74; SOT457; TSOP6 Max. off-state voltage: 5.6V Features of semiconductor devices: ESD protection Leakage current: 2µA Kind of package: reel; tape Anzahl je Verpackung: 5 Stücke |
auf Bestellung 2989 Stücke: Lieferzeit 7-14 Tag (e) |
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BZA462A,115 | NEXPERIA |
Category: Transil diodes - arrays Description: Diode: TVS array; 3.75A; 24W; quadruple,common anode; reel,tape Type of diode: TVS array Max. forward impulse current: 3.75A Peak pulse power dissipation: 24W Semiconductor structure: common anode; quadruple Mounting: SMD Case: SC74; SOT457; TSOP6 Max. off-state voltage: 6.2V Features of semiconductor devices: ESD protection Leakage current: 0.7µA Kind of package: reel; tape Anzahl je Verpackung: 5 Stücke |
Produkt ist nicht verfügbar |
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| BZA856A,115 | NEXPERIA |
Category: Transil diodes - arrays Description: Diode: TVS array; 3.75A; 24W; quadruple,common anode; reel,tape Case: SC88A; SOT353 Mounting: SMD Kind of package: reel; tape Peak pulse power dissipation: 24W Max. off-state voltage: 5.6V Semiconductor structure: common anode; quadruple Max. forward impulse current: 3.75A Leakage current: 2µA Type of diode: TVS array Features of semiconductor devices: ESD protection Anzahl je Verpackung: 5 Stücke |
Produkt ist nicht verfügbar |
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| BZA856AVL,115 | NEXPERIA |
Category: Transil diodes - arrays Description: Diode: TVS array; 3.5A; 6W; quadruple,common anode; SC88A,SOT353 Case: SC88A; SOT353 Mounting: SMD Kind of package: reel; tape Peak pulse power dissipation: 6W Max. off-state voltage: 5.6V Semiconductor structure: common anode; quadruple Max. forward impulse current: 3.5A Leakage current: 0.2µA Type of diode: TVS array Features of semiconductor devices: ESD protection Anzahl je Verpackung: 5 Stücke |
Produkt ist nicht verfügbar |
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| BZA962A,115 | NEXPERIA |
Category: Transil diodes - arrays Description: Diode: TVS array; 4A; 15W; quadruple,common anode; SOT665 Type of diode: TVS array Max. forward impulse current: 4A Peak pulse power dissipation: 15W Semiconductor structure: common anode; quadruple Mounting: SMD Case: SOT665 Max. off-state voltage: 6.2V Features of semiconductor devices: ESD protection Leakage current: 500pA Kind of package: reel; tape Anzahl je Verpackung: 5 Stücke |
Produkt ist nicht verfügbar |
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| BZA968A,115 | NEXPERIA |
Category: Transil diodes - arrays Description: Diode: TVS array; 4A; 14W; quadruple,common anode; SOT665 Case: SOT665 Mounting: SMD Kind of package: reel; tape Semiconductor structure: common anode; quadruple Max. off-state voltage: 6.8V Features of semiconductor devices: ESD protection Max. forward impulse current: 4A Leakage current: 100pA Type of diode: TVS array Peak pulse power dissipation: 14W Anzahl je Verpackung: 5 Stücke |
Produkt ist nicht verfügbar |
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BZB784-C10,115 | NEXPERIA |
Category: SMD Zener diodes Description: Diode: Zener; 0.35W; 10V; SMD; reel,tape; SOT323; Ifmax: 200mA Mounting: SMD Case: SOT323 Zener voltage: 10V Type of diode: Zener Leakage current: 0.2µA Semiconductor structure: common anode; double Power dissipation: 0.35W Max. forward voltage: 0.9V Max. load current: 0.2A Kind of package: reel; tape Tolerance: ±5% Anzahl je Verpackung: 5 Stücke |
Produkt ist nicht verfügbar |
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BZB784-C12,115 | NEXPERIA |
Category: SMD Zener diodes Description: Diode: Zener; 0.35W; 12V; SMD; reel,tape; SOT323; Ifmax: 200mA Mounting: SMD Case: SOT323 Zener voltage: 12V Type of diode: Zener Leakage current: 0.1µA Semiconductor structure: common anode; double Power dissipation: 0.35W Max. forward voltage: 0.9V Max. load current: 0.2A Kind of package: reel; tape Tolerance: ±5% Anzahl je Verpackung: 5 Stücke |
auf Bestellung 1710 Stücke: Lieferzeit 7-14 Tag (e) |
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BZB784-C15,115 | NEXPERIA |
Category: SMD Zener diodes Description: Diode: Zener; 0.35W; 15V; SMD; reel,tape; SOT323; Ifmax: 200mA Mounting: SMD Case: SOT323 Zener voltage: 15V Type of diode: Zener Leakage current: 50nA Semiconductor structure: common anode; double Power dissipation: 0.35W Max. forward voltage: 0.9V Max. load current: 0.2A Kind of package: reel; tape Tolerance: ±5% Anzahl je Verpackung: 20 Stücke |
auf Bestellung 2980 Stücke: Lieferzeit 7-14 Tag (e) |
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BZB784-C2V7,115 | NEXPERIA |
Category: SMD Zener diodes Description: Diode: Zener; 0.35W; 2.7V; SMD; reel,tape; SOT323; Ifmax: 200mA Case: SOT323 Mounting: SMD Kind of package: reel; tape Tolerance: ±5% Power dissipation: 0.35W Type of diode: Zener Max. load current: 0.2A Max. forward voltage: 0.9V Semiconductor structure: common anode; double Zener voltage: 2.7V Leakage current: 20µA Anzahl je Verpackung: 5 Stücke |
Produkt ist nicht verfügbar |
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BZB784-C3V3,115 | NEXPERIA |
Category: SMD Zener diodes Description: Diode: Zener; 0.35W; 3.3V; SMD; reel,tape; SOT323; Ifmax: 200mA Type of diode: Zener Power dissipation: 0.35W Zener voltage: 3.3V Mounting: SMD Tolerance: ±5% Kind of package: reel; tape Max. forward voltage: 0.9V Case: SOT323 Max. load current: 0.2A Semiconductor structure: common anode; double Leakage current: 5µA Anzahl je Verpackung: 5 Stücke |
Produkt ist nicht verfügbar |
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BZB784-C3V9,115 | NEXPERIA |
Category: SMD Zener diodes Description: Diode: Zener; 0.35W; 3.8V; SMD; reel,tape; SOT323; Ifmax: 200mA Type of diode: Zener Power dissipation: 0.35W Zener voltage: 3.8V Kind of package: reel; tape Case: SOT323 Mounting: SMD Tolerance: ±5% Semiconductor structure: common anode; double Leakage current: 3µA Max. load current: 0.2A Max. forward voltage: 0.9V Anzahl je Verpackung: 5 Stücke |
auf Bestellung 3000 Stücke: Lieferzeit 7-14 Tag (e) |
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BZB784-C4V3,115 | NEXPERIA |
Category: SMD Zener diodes Description: Diode: Zener; 0.35W; 4.3V; SMD; reel,tape; SOT323; Ifmax: 200mA Type of diode: Zener Power dissipation: 0.35W Zener voltage: 4.3V Mounting: SMD Tolerance: ±5% Kind of package: reel; tape Max. forward voltage: 0.9V Case: SOT323 Max. load current: 0.2A Semiconductor structure: common anode; double Leakage current: 3µA Anzahl je Verpackung: 5 Stücke |
Produkt ist nicht verfügbar |
| BUK9M14-40EX |
|
Hersteller: NEXPERIA
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 31A; Idm: 176A; 55W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 31A
Pulsed drain current: 176A
Power dissipation: 55W
Case: LFPAK33; SOT1210
Gate-source voltage: ±10V
On-state resistance: 28mΩ
Mounting: SMD
Gate charge: 11.3nC
Kind of package: reel; tape
Kind of channel: enhanced
Application: automotive industry
Anzahl je Verpackung: 1 Stücke
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 31A; Idm: 176A; 55W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 31A
Pulsed drain current: 176A
Power dissipation: 55W
Case: LFPAK33; SOT1210
Gate-source voltage: ±10V
On-state resistance: 28mΩ
Mounting: SMD
Gate charge: 11.3nC
Kind of package: reel; tape
Kind of channel: enhanced
Application: automotive industry
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
| BUK9M15-40HX |
|
Hersteller: NEXPERIA
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 27.4A; Idm: 155A; 44W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 27.4A
Pulsed drain current: 155A
Power dissipation: 44W
Case: LFPAK33; SOT1210
On-state resistance: 36.9mΩ
Mounting: SMD
Gate charge: 16.2nC
Kind of package: reel; tape
Kind of channel: enhanced
Application: automotive industry
Anzahl je Verpackung: 1 Stücke
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 27.4A; Idm: 155A; 44W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 27.4A
Pulsed drain current: 155A
Power dissipation: 44W
Case: LFPAK33; SOT1210
On-state resistance: 36.9mΩ
Mounting: SMD
Gate charge: 16.2nC
Kind of package: reel; tape
Kind of channel: enhanced
Application: automotive industry
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
| BUK9M15-60EX |
|
Hersteller: NEXPERIA
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 33A; Idm: 188A; 75W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 33A
Pulsed drain current: 188A
Power dissipation: 75W
Case: LFPAK33; SOT1210
Gate-source voltage: ±10V
On-state resistance: 34mΩ
Mounting: SMD
Gate charge: 17nC
Kind of package: reel; tape
Kind of channel: enhanced
Application: automotive industry
Anzahl je Verpackung: 1 Stücke
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 33A; Idm: 188A; 75W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 33A
Pulsed drain current: 188A
Power dissipation: 75W
Case: LFPAK33; SOT1210
Gate-source voltage: ±10V
On-state resistance: 34mΩ
Mounting: SMD
Gate charge: 17nC
Kind of package: reel; tape
Kind of channel: enhanced
Application: automotive industry
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
| BUK9M156-100EX |
|
Hersteller: NEXPERIA
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 6.5A; Idm: 37A; 36W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 6.5A
Pulsed drain current: 37A
Power dissipation: 36W
Case: LFPAK33; SOT1210
Gate-source voltage: ±10V
On-state resistance: 0.42Ω
Mounting: SMD
Gate charge: 7.4nC
Kind of package: reel; tape
Kind of channel: enhanced
Application: automotive industry
Anzahl je Verpackung: 1 Stücke
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 6.5A; Idm: 37A; 36W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 6.5A
Pulsed drain current: 37A
Power dissipation: 36W
Case: LFPAK33; SOT1210
Gate-source voltage: ±10V
On-state resistance: 0.42Ω
Mounting: SMD
Gate charge: 7.4nC
Kind of package: reel; tape
Kind of channel: enhanced
Application: automotive industry
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
| BUK9M17-30EX |
|
Hersteller: NEXPERIA
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 26A; Idm: 148A; 44W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 26A
Pulsed drain current: 148A
Power dissipation: 44W
Case: LFPAK33; SOT1210
Gate-source voltage: ±10V
On-state resistance: 32mΩ
Mounting: SMD
Gate charge: 8nC
Kind of package: reel; tape
Kind of channel: enhanced
Application: automotive industry
Anzahl je Verpackung: 1 Stücke
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 26A; Idm: 148A; 44W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 26A
Pulsed drain current: 148A
Power dissipation: 44W
Case: LFPAK33; SOT1210
Gate-source voltage: ±10V
On-state resistance: 32mΩ
Mounting: SMD
Gate charge: 8nC
Kind of package: reel; tape
Kind of channel: enhanced
Application: automotive industry
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
| BUK9M19-60EX |
|
Hersteller: NEXPERIA
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 26.8A; Idm: 152A; 62W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 26.8A
Pulsed drain current: 152A
Power dissipation: 62W
Case: LFPAK33; SOT1210
On-state resistance: 43mΩ
Mounting: SMD
Gate charge: 13.8nC
Kind of package: reel; tape
Kind of channel: enhanced
Application: automotive industry
Anzahl je Verpackung: 1 Stücke
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 26.8A; Idm: 152A; 62W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 26.8A
Pulsed drain current: 152A
Power dissipation: 62W
Case: LFPAK33; SOT1210
On-state resistance: 43mΩ
Mounting: SMD
Gate charge: 13.8nC
Kind of package: reel; tape
Kind of channel: enhanced
Application: automotive industry
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
| BUK9M20-40HX |
|
Hersteller: NEXPERIA
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 22A; Idm: 125A; 38W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 22A
Pulsed drain current: 125A
Power dissipation: 38W
Case: LFPAK33; SOT1210
On-state resistance: 48.5mΩ
Mounting: SMD
Gate charge: 12.6nC
Kind of package: reel; tape
Kind of channel: enhanced
Application: automotive industry
Anzahl je Verpackung: 1 Stücke
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 22A; Idm: 125A; 38W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 22A
Pulsed drain current: 125A
Power dissipation: 38W
Case: LFPAK33; SOT1210
On-state resistance: 48.5mΩ
Mounting: SMD
Gate charge: 12.6nC
Kind of package: reel; tape
Kind of channel: enhanced
Application: automotive industry
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
| BUK9M23-80EX |
|
Hersteller: NEXPERIA
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 80V; 26A; Idm: 148A; 79W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 80V
Drain current: 26A
Pulsed drain current: 148A
Power dissipation: 79W
Case: LFPAK33; SOT1210
Gate-source voltage: ±10V
On-state resistance: 58mΩ
Mounting: SMD
Gate charge: 20nC
Kind of package: reel; tape
Kind of channel: enhanced
Application: automotive industry
Anzahl je Verpackung: 1 Stücke
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 80V; 26A; Idm: 148A; 79W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 80V
Drain current: 26A
Pulsed drain current: 148A
Power dissipation: 79W
Case: LFPAK33; SOT1210
Gate-source voltage: ±10V
On-state resistance: 58mΩ
Mounting: SMD
Gate charge: 20nC
Kind of package: reel; tape
Kind of channel: enhanced
Application: automotive industry
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
| BUK9M24-60EX |
|
Hersteller: NEXPERIA
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 22.4A; Idm: 127A; 55W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 22.4A
Pulsed drain current: 127A
Power dissipation: 55W
Case: LFPAK33; SOT1210
On-state resistance: 54mΩ
Mounting: SMD
Gate charge: 12.4nC
Kind of package: reel; tape
Kind of channel: enhanced
Application: automotive industry
Anzahl je Verpackung: 1 Stücke
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 22.4A; Idm: 127A; 55W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 22.4A
Pulsed drain current: 127A
Power dissipation: 55W
Case: LFPAK33; SOT1210
On-state resistance: 54mΩ
Mounting: SMD
Gate charge: 12.4nC
Kind of package: reel; tape
Kind of channel: enhanced
Application: automotive industry
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
| BUK9M28-80EX |
|
Hersteller: NEXPERIA
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 80V; 23.1A; Idm: 131A; 75W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 80V
Drain current: 23.1A
Pulsed drain current: 131A
Power dissipation: 75W
Case: LFPAK33; SOT1210
On-state resistance: 70mΩ
Mounting: SMD
Gate charge: 16.7nC
Kind of package: reel; tape
Kind of channel: enhanced
Application: automotive industry
Anzahl je Verpackung: 1 Stücke
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 80V; 23.1A; Idm: 131A; 75W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 80V
Drain current: 23.1A
Pulsed drain current: 131A
Power dissipation: 75W
Case: LFPAK33; SOT1210
On-state resistance: 70mΩ
Mounting: SMD
Gate charge: 16.7nC
Kind of package: reel; tape
Kind of channel: enhanced
Application: automotive industry
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
| BUK9M35-80EX |
|
Hersteller: NEXPERIA
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 80V; 19A; Idm: 106A; 62W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 80V
Drain current: 19A
Pulsed drain current: 106A
Power dissipation: 62W
Case: LFPAK33; SOT1210
On-state resistance: 88mΩ
Mounting: SMD
Gate charge: 13.5nC
Kind of package: reel; tape
Kind of channel: enhanced
Application: automotive industry
Anzahl je Verpackung: 1 Stücke
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 80V; 19A; Idm: 106A; 62W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 80V
Drain current: 19A
Pulsed drain current: 106A
Power dissipation: 62W
Case: LFPAK33; SOT1210
On-state resistance: 88mΩ
Mounting: SMD
Gate charge: 13.5nC
Kind of package: reel; tape
Kind of channel: enhanced
Application: automotive industry
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
| BUK9M3R3-40HX |
|
Hersteller: NEXPERIA
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 80A; Idm: 475A; 101W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 80A
Pulsed drain current: 475A
Power dissipation: 101W
Case: LFPAK33; SOT1210
On-state resistance: 9.2mΩ
Mounting: SMD
Gate charge: 55nC
Kind of package: reel; tape
Kind of channel: enhanced
Application: automotive industry
Anzahl je Verpackung: 1 Stücke
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 80A; Idm: 475A; 101W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 80A
Pulsed drain current: 475A
Power dissipation: 101W
Case: LFPAK33; SOT1210
On-state resistance: 9.2mΩ
Mounting: SMD
Gate charge: 55nC
Kind of package: reel; tape
Kind of channel: enhanced
Application: automotive industry
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
| BUK9M42-60EX |
|
Hersteller: NEXPERIA
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 15.2A; Idm: 86A; 44W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 15.2A
Pulsed drain current: 86A
Power dissipation: 44W
Case: LFPAK33; SOT1210
On-state resistance: 95mΩ
Mounting: SMD
Gate charge: 8.3nC
Kind of package: reel; tape
Kind of channel: enhanced
Application: automotive industry
Anzahl je Verpackung: 1 Stücke
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 15.2A; Idm: 86A; 44W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 15.2A
Pulsed drain current: 86A
Power dissipation: 44W
Case: LFPAK33; SOT1210
On-state resistance: 95mΩ
Mounting: SMD
Gate charge: 8.3nC
Kind of package: reel; tape
Kind of channel: enhanced
Application: automotive industry
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
| BUK9M43-100EX |
|
Hersteller: NEXPERIA
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 17.6A; Idm: 99A; 75W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 17.6A
Pulsed drain current: 99A
Power dissipation: 75W
Case: LFPAK33; SOT1210
On-state resistance: 121mΩ
Mounting: SMD
Gate charge: 20.2nC
Kind of package: reel; tape
Kind of channel: enhanced
Application: automotive industry
Anzahl je Verpackung: 1 Stücke
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 17.6A; Idm: 99A; 75W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 17.6A
Pulsed drain current: 99A
Power dissipation: 75W
Case: LFPAK33; SOT1210
On-state resistance: 121mΩ
Mounting: SMD
Gate charge: 20.2nC
Kind of package: reel; tape
Kind of channel: enhanced
Application: automotive industry
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
| BUK9M4R3-40HX |
|
Hersteller: NEXPERIA
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 69A; Idm: 392A; 90W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 69A
Pulsed drain current: 392A
Power dissipation: 90W
Case: LFPAK33; SOT1210
On-state resistance: 12mΩ
Mounting: SMD
Gate charge: 43nC
Kind of package: reel; tape
Kind of channel: enhanced
Application: automotive industry
Anzahl je Verpackung: 1 Stücke
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 69A; Idm: 392A; 90W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 69A
Pulsed drain current: 392A
Power dissipation: 90W
Case: LFPAK33; SOT1210
On-state resistance: 12mΩ
Mounting: SMD
Gate charge: 43nC
Kind of package: reel; tape
Kind of channel: enhanced
Application: automotive industry
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
| BUK9M5R0-40HX |
|
Hersteller: NEXPERIA
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 61.7A; Idm: 349A; 83W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 61.7A
Pulsed drain current: 349A
Power dissipation: 83W
Case: LFPAK33; SOT1210
On-state resistance: 14mΩ
Mounting: SMD
Gate charge: 39nC
Kind of package: reel; tape
Kind of channel: enhanced
Application: automotive industry
Anzahl je Verpackung: 1 Stücke
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 61.7A; Idm: 349A; 83W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 61.7A
Pulsed drain current: 349A
Power dissipation: 83W
Case: LFPAK33; SOT1210
On-state resistance: 14mΩ
Mounting: SMD
Gate charge: 39nC
Kind of package: reel; tape
Kind of channel: enhanced
Application: automotive industry
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
| BUK9M5R2-30EX |
|
Hersteller: NEXPERIA
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 63A; Idm: 358A; 79W
Mounting: SMD
Case: LFPAK33; SOT1210
Kind of package: reel; tape
Power dissipation: 79W
Application: automotive industry
Polarisation: unipolar
Gate charge: 22.5nC
Kind of channel: enhanced
Gate-source voltage: ±10V
Pulsed drain current: 358A
Drain-source voltage: 30V
Drain current: 63A
On-state resistance: 9.8mΩ
Type of transistor: N-MOSFET
Anzahl je Verpackung: 1 Stücke
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 63A; Idm: 358A; 79W
Mounting: SMD
Case: LFPAK33; SOT1210
Kind of package: reel; tape
Power dissipation: 79W
Application: automotive industry
Polarisation: unipolar
Gate charge: 22.5nC
Kind of channel: enhanced
Gate-source voltage: ±10V
Pulsed drain current: 358A
Drain-source voltage: 30V
Drain current: 63A
On-state resistance: 9.8mΩ
Type of transistor: N-MOSFET
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
| BUK9M67-60ELX |
|
Hersteller: NEXPERIA
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 15A; Idm: 85A; 45W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 15A
Pulsed drain current: 85A
Power dissipation: 45W
Case: LFPAK33; SOT1210
Gate-source voltage: ±10V
On-state resistance: 148mΩ
Mounting: SMD
Gate charge: 19nC
Kind of package: reel; tape
Kind of channel: enhanced
Application: automotive industry
Anzahl je Verpackung: 1 Stücke
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 15A; Idm: 85A; 45W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 15A
Pulsed drain current: 85A
Power dissipation: 45W
Case: LFPAK33; SOT1210
Gate-source voltage: ±10V
On-state resistance: 148mΩ
Mounting: SMD
Gate charge: 19nC
Kind of package: reel; tape
Kind of channel: enhanced
Application: automotive industry
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
| BUK9M6R0-40HX |
|
Hersteller: NEXPERIA
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 50A; Idm: 311A; 70W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 50A
Pulsed drain current: 311A
Power dissipation: 70W
Case: LFPAK33; SOT1210
On-state resistance: 15mΩ
Mounting: SMD
Gate charge: 36nC
Kind of package: reel; tape
Kind of channel: enhanced
Application: automotive industry
Anzahl je Verpackung: 1 Stücke
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 50A; Idm: 311A; 70W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 50A
Pulsed drain current: 311A
Power dissipation: 70W
Case: LFPAK33; SOT1210
On-state resistance: 15mΩ
Mounting: SMD
Gate charge: 36nC
Kind of package: reel; tape
Kind of channel: enhanced
Application: automotive industry
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
| BUK9M6R6-30EX |
|
Hersteller: NEXPERIA
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 54.7A; Idm: 309A; 75W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 54.7A
Pulsed drain current: 309A
Power dissipation: 75W
Case: LFPAK33; SOT1210
Gate-source voltage: ±10V
On-state resistance: 13mΩ
Mounting: SMD
Gate charge: 18nC
Kind of package: reel; tape
Kind of channel: enhanced
Application: automotive industry
Anzahl je Verpackung: 1 Stücke
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 54.7A; Idm: 309A; 75W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 54.7A
Pulsed drain current: 309A
Power dissipation: 75W
Case: LFPAK33; SOT1210
Gate-source voltage: ±10V
On-state resistance: 13mΩ
Mounting: SMD
Gate charge: 18nC
Kind of package: reel; tape
Kind of channel: enhanced
Application: automotive industry
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
| BUK9M6R7-40HX |
|
Hersteller: NEXPERIA
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 50A; Idm: 282A; 65W
Application: automotive industry
Type of transistor: N-MOSFET
Power dissipation: 65W
Polarisation: unipolar
Kind of package: reel; tape
Gate charge: 31nC
Kind of channel: enhanced
Pulsed drain current: 282A
Mounting: SMD
Case: LFPAK33; SOT1210
Drain-source voltage: 40V
Drain current: 50A
On-state resistance: 16.7mΩ
Anzahl je Verpackung: 1 Stücke
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 50A; Idm: 282A; 65W
Application: automotive industry
Type of transistor: N-MOSFET
Power dissipation: 65W
Polarisation: unipolar
Kind of package: reel; tape
Gate charge: 31nC
Kind of channel: enhanced
Pulsed drain current: 282A
Mounting: SMD
Case: LFPAK33; SOT1210
Drain-source voltage: 40V
Drain current: 50A
On-state resistance: 16.7mΩ
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
| BUK9M7R2-40EX |
|
Hersteller: NEXPERIA
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 52A; Idm: 296A; 79W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 52A
Pulsed drain current: 296A
Power dissipation: 79W
Case: LFPAK33; SOT1210
Gate-source voltage: ±10V
On-state resistance: 14.5mΩ
Mounting: SMD
Gate charge: 19.7nC
Kind of package: reel; tape
Kind of channel: enhanced
Application: automotive industry
Anzahl je Verpackung: 1 Stücke
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 52A; Idm: 296A; 79W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 52A
Pulsed drain current: 296A
Power dissipation: 79W
Case: LFPAK33; SOT1210
Gate-source voltage: ±10V
On-state resistance: 14.5mΩ
Mounting: SMD
Gate charge: 19.7nC
Kind of package: reel; tape
Kind of channel: enhanced
Application: automotive industry
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
| BUK9M85-60EX |
|
Hersteller: NEXPERIA
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 9A; Idm: 51A; 31W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 9A
Pulsed drain current: 51A
Power dissipation: 31W
Case: LFPAK33; SOT1210
On-state resistance: 192mΩ
Mounting: SMD
Gate charge: 4.4nC
Kind of package: reel; tape
Kind of channel: enhanced
Application: automotive industry
Anzahl je Verpackung: 1 Stücke
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 9A; Idm: 51A; 31W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 9A
Pulsed drain current: 51A
Power dissipation: 31W
Case: LFPAK33; SOT1210
On-state resistance: 192mΩ
Mounting: SMD
Gate charge: 4.4nC
Kind of package: reel; tape
Kind of channel: enhanced
Application: automotive industry
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
| BUK9M8R5-40HX |
|
Hersteller: NEXPERIA
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 40A; Idm: 239A; 59W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 40A
Pulsed drain current: 239A
Power dissipation: 59W
Case: LFPAK33; SOT1210
On-state resistance: 21.4mΩ
Mounting: SMD
Gate charge: 28nC
Kind of package: reel; tape
Kind of channel: enhanced
Application: automotive industry
Anzahl je Verpackung: 1 Stücke
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 40A; Idm: 239A; 59W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 40A
Pulsed drain current: 239A
Power dissipation: 59W
Case: LFPAK33; SOT1210
On-state resistance: 21.4mΩ
Mounting: SMD
Gate charge: 28nC
Kind of package: reel; tape
Kind of channel: enhanced
Application: automotive industry
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
| BUK9M9R1-40EX |
|
Hersteller: NEXPERIA
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 45.5A; Idm: 258A; 75W
Power dissipation: 75W
Case: LFPAK33; SOT1210
Mounting: SMD
Kind of package: reel; tape
Application: automotive industry
On-state resistance: 18.1mΩ
Drain current: 45.5A
Polarisation: unipolar
Drain-source voltage: 40V
Type of transistor: N-MOSFET
Gate charge: 16.2nC
Kind of channel: enhanced
Gate-source voltage: ±10V
Pulsed drain current: 258A
Anzahl je Verpackung: 1 Stücke
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 45.5A; Idm: 258A; 75W
Power dissipation: 75W
Case: LFPAK33; SOT1210
Mounting: SMD
Kind of package: reel; tape
Application: automotive industry
On-state resistance: 18.1mΩ
Drain current: 45.5A
Polarisation: unipolar
Drain-source voltage: 40V
Type of transistor: N-MOSFET
Gate charge: 16.2nC
Kind of channel: enhanced
Gate-source voltage: ±10V
Pulsed drain current: 258A
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
| BUK9M9R5-40HX |
|
Hersteller: NEXPERIA
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 38.5A; Idm: 218A; 55W
Application: automotive industry
Mounting: SMD
Drain-source voltage: 40V
Drain current: 38.5A
On-state resistance: 23.3mΩ
Type of transistor: N-MOSFET
Power dissipation: 55W
Polarisation: unipolar
Kind of package: reel; tape
Case: LFPAK33; SOT1210
Gate charge: 24nC
Kind of channel: enhanced
Pulsed drain current: 218A
Anzahl je Verpackung: 1 Stücke
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 38.5A; Idm: 218A; 55W
Application: automotive industry
Mounting: SMD
Drain-source voltage: 40V
Drain current: 38.5A
On-state resistance: 23.3mΩ
Type of transistor: N-MOSFET
Power dissipation: 55W
Polarisation: unipolar
Kind of package: reel; tape
Case: LFPAK33; SOT1210
Gate charge: 24nC
Kind of channel: enhanced
Pulsed drain current: 218A
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
| BUK9Y09-40B,115 |
|
Hersteller: NEXPERIA
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 53A; Idm: 300A; 105.3W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 53A
Pulsed drain current: 300A
Power dissipation: 105.3W
Case: LFPAK56; PowerSO8; SOT669
Gate-source voltage: ±15V
On-state resistance: 19mΩ
Mounting: SMD
Gate charge: 30nC
Kind of package: reel; tape
Kind of channel: enhanced
Application: automotive industry
Anzahl je Verpackung: 1 Stücke
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 53A; Idm: 300A; 105.3W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 53A
Pulsed drain current: 300A
Power dissipation: 105.3W
Case: LFPAK56; PowerSO8; SOT669
Gate-source voltage: ±15V
On-state resistance: 19mΩ
Mounting: SMD
Gate charge: 30nC
Kind of package: reel; tape
Kind of channel: enhanced
Application: automotive industry
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
| BUK9Y104-100B,115 |
|
Hersteller: NEXPERIA
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 10.48A; Idm: 59A; 59W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 10.48A
Pulsed drain current: 59A
Power dissipation: 59W
Case: LFPAK56; PowerSO8; SOT669
Gate-source voltage: ±15V
On-state resistance: 0.27Ω
Mounting: SMD
Gate charge: 11nC
Kind of package: reel; tape
Kind of channel: enhanced
Application: automotive industry
Anzahl je Verpackung: 1 Stücke
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 10.48A; Idm: 59A; 59W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 10.48A
Pulsed drain current: 59A
Power dissipation: 59W
Case: LFPAK56; PowerSO8; SOT669
Gate-source voltage: ±15V
On-state resistance: 0.27Ω
Mounting: SMD
Gate charge: 11nC
Kind of package: reel; tape
Kind of channel: enhanced
Application: automotive industry
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
| BUK9Y11-80EX |
|
Hersteller: NEXPERIA
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 80V; 59.3A; Idm: 336A; 194W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 80V
Drain current: 59.3A
Pulsed drain current: 336A
Power dissipation: 194W
Case: LFPAK56; PowerSO8; SOT669
Gate-source voltage: ±10V
On-state resistance: 27.6mΩ
Mounting: SMD
Gate charge: 44.2nC
Kind of package: reel; tape
Kind of channel: enhanced
Application: automotive industry
Anzahl je Verpackung: 1 Stücke
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 80V; 59.3A; Idm: 336A; 194W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 80V
Drain current: 59.3A
Pulsed drain current: 336A
Power dissipation: 194W
Case: LFPAK56; PowerSO8; SOT669
Gate-source voltage: ±10V
On-state resistance: 27.6mΩ
Mounting: SMD
Gate charge: 44.2nC
Kind of package: reel; tape
Kind of channel: enhanced
Application: automotive industry
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
| BUK9Y113-100E,115 |
|
Hersteller: NEXPERIA
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 8.5A; Idm: 48A; 45W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 8.5A
Pulsed drain current: 48A
Power dissipation: 45W
Case: LFPAK56; PowerSO8; SOT669
Gate-source voltage: ±10V
On-state resistance: 312mΩ
Mounting: SMD
Gate charge: 8.4nC
Kind of package: reel; tape
Kind of channel: enhanced
Application: automotive industry
Anzahl je Verpackung: 1 Stücke
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 8.5A; Idm: 48A; 45W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 8.5A
Pulsed drain current: 48A
Power dissipation: 45W
Case: LFPAK56; PowerSO8; SOT669
Gate-source voltage: ±10V
On-state resistance: 312mΩ
Mounting: SMD
Gate charge: 8.4nC
Kind of package: reel; tape
Kind of channel: enhanced
Application: automotive industry
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
| BUK9Y12-40E,115 |
|
Hersteller: NEXPERIA
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 36.7A; Idm: 208A; 65W
Mounting: SMD
Case: LFPAK56; PowerSO8; SOT669
Kind of package: reel; tape
Drain-source voltage: 40V
Drain current: 36.7A
On-state resistance: 24.1mΩ
Type of transistor: N-MOSFET
Application: automotive industry
Power dissipation: 65W
Polarisation: unipolar
Gate charge: 9.8nC
Kind of channel: enhanced
Gate-source voltage: ±10V
Pulsed drain current: 208A
Anzahl je Verpackung: 1 Stücke
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 36.7A; Idm: 208A; 65W
Mounting: SMD
Case: LFPAK56; PowerSO8; SOT669
Kind of package: reel; tape
Drain-source voltage: 40V
Drain current: 36.7A
On-state resistance: 24.1mΩ
Type of transistor: N-MOSFET
Application: automotive industry
Power dissipation: 65W
Polarisation: unipolar
Gate charge: 9.8nC
Kind of channel: enhanced
Gate-source voltage: ±10V
Pulsed drain current: 208A
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
| BUK9Y15-100E,115 |
|
Hersteller: NEXPERIA
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 49A; Idm: 274A; 195W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 49A
Pulsed drain current: 274A
Power dissipation: 195W
Case: LFPAK56; PowerSO8; SOT669
Gate-source voltage: ±10V
On-state resistance: 41.4mΩ
Mounting: SMD
Gate charge: 45.8nC
Kind of package: reel; tape
Kind of channel: enhanced
Application: automotive industry
Anzahl je Verpackung: 1 Stücke
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 49A; Idm: 274A; 195W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 49A
Pulsed drain current: 274A
Power dissipation: 195W
Case: LFPAK56; PowerSO8; SOT669
Gate-source voltage: ±10V
On-state resistance: 41.4mΩ
Mounting: SMD
Gate charge: 45.8nC
Kind of package: reel; tape
Kind of channel: enhanced
Application: automotive industry
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
| BUK9Y19-75B,115 |
|
Hersteller: NEXPERIA
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 75V; 34.1A; Idm: 192A; 106W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 75V
Drain current: 34.1A
Pulsed drain current: 192A
Power dissipation: 106W
Case: LFPAK56; PowerSO8; SOT669
Gate-source voltage: ±15V
On-state resistance: 48mΩ
Mounting: SMD
Gate charge: 30nC
Kind of package: reel; tape
Kind of channel: enhanced
Application: automotive industry
Anzahl je Verpackung: 1 Stücke
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 75V; 34.1A; Idm: 192A; 106W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 75V
Drain current: 34.1A
Pulsed drain current: 192A
Power dissipation: 106W
Case: LFPAK56; PowerSO8; SOT669
Gate-source voltage: ±15V
On-state resistance: 48mΩ
Mounting: SMD
Gate charge: 30nC
Kind of package: reel; tape
Kind of channel: enhanced
Application: automotive industry
Anzahl je Verpackung: 1 Stücke
auf Bestellung 1500 Stücke:
Lieferzeit 7-14 Tag (e)| Anzahl | Preis ohne MwSt |
|---|---|
| 50+ | 1.43 EUR |
| 55+ | 1.3 EUR |
| 73+ | 0.99 EUR |
| 77+ | 0.93 EUR |
| BUK9Y1R3-40HX |
|
Hersteller: NEXPERIA
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 190A; Idm: 600A; 395W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 190A
Pulsed drain current: 600A
Power dissipation: 395W
Case: LFPAK56; PowerSO8; SOT669
On-state resistance: 3.9mΩ
Mounting: SMD
Gate charge: 139nC
Kind of package: reel; tape
Kind of channel: enhanced
Application: automotive industry
Anzahl je Verpackung: 1500 Stücke
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 190A; Idm: 600A; 395W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 190A
Pulsed drain current: 600A
Power dissipation: 395W
Case: LFPAK56; PowerSO8; SOT669
On-state resistance: 3.9mΩ
Mounting: SMD
Gate charge: 139nC
Kind of package: reel; tape
Kind of channel: enhanced
Application: automotive industry
Anzahl je Verpackung: 1500 Stücke
Produkt ist nicht verfügbar
| BUK9Y1R6-40HX |
Hersteller: NEXPERIA
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 120A; Idm: 600A; 294W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 120A
Pulsed drain current: 600A
Power dissipation: 294W
Case: LFPAK56; PowerSO8; SOT669
On-state resistance: 4.8mΩ
Mounting: SMD
Gate charge: 107.8nC
Kind of package: reel; tape
Kind of channel: enhanced
Application: automotive industry
Anzahl je Verpackung: 1500 Stücke
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 120A; Idm: 600A; 294W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 120A
Pulsed drain current: 600A
Power dissipation: 294W
Case: LFPAK56; PowerSO8; SOT669
On-state resistance: 4.8mΩ
Mounting: SMD
Gate charge: 107.8nC
Kind of package: reel; tape
Kind of channel: enhanced
Application: automotive industry
Anzahl je Verpackung: 1500 Stücke
Produkt ist nicht verfügbar
| BUK9Y1R9-40HX |
|
Hersteller: NEXPERIA
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 120A; Idm: 600A; 217W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 120A
Pulsed drain current: 600A
Power dissipation: 217W
Case: LFPAK56; PowerSO8; SOT669
On-state resistance: 5.7mΩ
Mounting: SMD
Gate charge: 93nC
Kind of package: reel; tape
Kind of channel: enhanced
Application: automotive industry
Anzahl je Verpackung: 1500 Stücke
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 120A; Idm: 600A; 217W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 120A
Pulsed drain current: 600A
Power dissipation: 217W
Case: LFPAK56; PowerSO8; SOT669
On-state resistance: 5.7mΩ
Mounting: SMD
Gate charge: 93nC
Kind of package: reel; tape
Kind of channel: enhanced
Application: automotive industry
Anzahl je Verpackung: 1500 Stücke
Produkt ist nicht verfügbar
| BUK9Y22-100E,115 |
|
Hersteller: NEXPERIA
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 35A; Idm: 197A; 147W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 35A
Pulsed drain current: 197A
Power dissipation: 147W
Case: LFPAK56; PowerSO8; SOT669
Gate-source voltage: ±10V
On-state resistance: 60.7mΩ
Mounting: SMD
Gate charge: 35.8nC
Kind of package: reel; tape
Kind of channel: enhanced
Application: automotive industry
Anzahl je Verpackung: 1 Stücke
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 35A; Idm: 197A; 147W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 35A
Pulsed drain current: 197A
Power dissipation: 147W
Case: LFPAK56; PowerSO8; SOT669
Gate-source voltage: ±10V
On-state resistance: 60.7mΩ
Mounting: SMD
Gate charge: 35.8nC
Kind of package: reel; tape
Kind of channel: enhanced
Application: automotive industry
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
| BUK9Y2R4-40HX |
|
Hersteller: NEXPERIA
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 120A; Idm: 600A; 163W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 120A
Pulsed drain current: 600A
Power dissipation: 163W
Case: LFPAK56; PowerSO8; SOT669
On-state resistance: 7mΩ
Mounting: SMD
Gate charge: 78.2nC
Kind of package: reel; tape
Kind of channel: enhanced
Application: automotive industry
Anzahl je Verpackung: 1500 Stücke
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 120A; Idm: 600A; 163W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 120A
Pulsed drain current: 600A
Power dissipation: 163W
Case: LFPAK56; PowerSO8; SOT669
On-state resistance: 7mΩ
Mounting: SMD
Gate charge: 78.2nC
Kind of package: reel; tape
Kind of channel: enhanced
Application: automotive industry
Anzahl je Verpackung: 1500 Stücke
Produkt ist nicht verfügbar
| BUK9Y2R8-40HX |
Hersteller: NEXPERIA
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 120A; Idm: 600A; 172W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 120A
Pulsed drain current: 600A
Power dissipation: 172W
Case: LFPAK56; PowerSO8; SOT669
On-state resistance: 8.6mΩ
Mounting: SMD
Gate charge: 62nC
Kind of package: reel; tape
Kind of channel: enhanced
Application: automotive industry
Anzahl je Verpackung: 1500 Stücke
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 120A; Idm: 600A; 172W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 120A
Pulsed drain current: 600A
Power dissipation: 172W
Case: LFPAK56; PowerSO8; SOT669
On-state resistance: 8.6mΩ
Mounting: SMD
Gate charge: 62nC
Kind of package: reel; tape
Kind of channel: enhanced
Application: automotive industry
Anzahl je Verpackung: 1500 Stücke
Produkt ist nicht verfügbar
| BUK9Y3R5-40E,115 |
|
Hersteller: NEXPERIA
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 100A; Idm: 591A; 167W
Application: automotive industry
On-state resistance: 7.6mΩ
Mounting: SMD
Pulsed drain current: 591A
Power dissipation: 167W
Gate charge: 30.2nC
Polarisation: unipolar
Drain current: 100A
Kind of channel: enhanced
Drain-source voltage: 40V
Type of transistor: N-MOSFET
Gate-source voltage: ±10V
Kind of package: reel; tape
Case: LFPAK56; PowerSO8; SOT669
Anzahl je Verpackung: 1 Stücke
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 100A; Idm: 591A; 167W
Application: automotive industry
On-state resistance: 7.6mΩ
Mounting: SMD
Pulsed drain current: 591A
Power dissipation: 167W
Gate charge: 30.2nC
Polarisation: unipolar
Drain current: 100A
Kind of channel: enhanced
Drain-source voltage: 40V
Type of transistor: N-MOSFET
Gate-source voltage: ±10V
Kind of package: reel; tape
Case: LFPAK56; PowerSO8; SOT669
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
| BUK9Y4R8-60E,115 |
|
Hersteller: NEXPERIA
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 100A; Idm: 593A; 238W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 100A
Pulsed drain current: 593A
Power dissipation: 238W
Case: LFPAK56; PowerSO8; SOT669
Gate-source voltage: ±10V
On-state resistance: 10.8mΩ
Mounting: SMD
Gate charge: 54.8nC
Kind of package: reel; tape
Kind of channel: enhanced
Application: automotive industry
Anzahl je Verpackung: 1500 Stücke
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 100A; Idm: 593A; 238W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 100A
Pulsed drain current: 593A
Power dissipation: 238W
Case: LFPAK56; PowerSO8; SOT669
Gate-source voltage: ±10V
On-state resistance: 10.8mΩ
Mounting: SMD
Gate charge: 54.8nC
Kind of package: reel; tape
Kind of channel: enhanced
Application: automotive industry
Anzahl je Verpackung: 1500 Stücke
Produkt ist nicht verfügbar
| BUK9Y6R5-40HX |
|
Hersteller: NEXPERIA
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 50A; Idm: 284A; 64W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 50A
Pulsed drain current: 284A
Power dissipation: 64W
Case: LFPAK56; PowerSO8; SOT669
Gate-source voltage: ±20V
On-state resistance: 16.7mΩ
Mounting: SMD
Gate charge: 29nC
Kind of package: reel; tape
Kind of channel: enhanced
Application: automotive industry
Anzahl je Verpackung: 1 Stücke
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 50A; Idm: 284A; 64W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 50A
Pulsed drain current: 284A
Power dissipation: 64W
Case: LFPAK56; PowerSO8; SOT669
Gate-source voltage: ±20V
On-state resistance: 16.7mΩ
Mounting: SMD
Gate charge: 29nC
Kind of package: reel; tape
Kind of channel: enhanced
Application: automotive industry
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
| BUK9Y72-80E,115 |
|
Hersteller: NEXPERIA
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 80V; 10.7A; Idm: 61A; 45W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 80V
Drain current: 10.7A
Pulsed drain current: 61A
Power dissipation: 45W
Case: LFPAK56; PowerSO8; SOT669
Gate-source voltage: ±10V
On-state resistance: 196mΩ
Mounting: SMD
Gate charge: 7.9nC
Kind of package: reel; tape
Kind of channel: enhanced
Application: automotive industry
Anzahl je Verpackung: 1 Stücke
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 80V; 10.7A; Idm: 61A; 45W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 80V
Drain current: 10.7A
Pulsed drain current: 61A
Power dissipation: 45W
Case: LFPAK56; PowerSO8; SOT669
Gate-source voltage: ±10V
On-state resistance: 196mΩ
Mounting: SMD
Gate charge: 7.9nC
Kind of package: reel; tape
Kind of channel: enhanced
Application: automotive industry
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
| BUK9Y7R0-60ELX |
|
Hersteller: NEXPERIA
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 108A; Idm: 612A; 238.4W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 108A
Pulsed drain current: 612A
Power dissipation: 238.4W
Case: LFPAK56; PowerSO8; SOT669
Gate-source voltage: ±10V
On-state resistance: 15.4mΩ
Mounting: SMD
Gate charge: 152nC
Kind of package: reel; tape
Kind of channel: enhanced
Application: automotive industry
Anzahl je Verpackung: 1500 Stücke
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 108A; Idm: 612A; 238.4W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 108A
Pulsed drain current: 612A
Power dissipation: 238.4W
Case: LFPAK56; PowerSO8; SOT669
Gate-source voltage: ±10V
On-state resistance: 15.4mΩ
Mounting: SMD
Gate charge: 152nC
Kind of package: reel; tape
Kind of channel: enhanced
Application: automotive industry
Anzahl je Verpackung: 1500 Stücke
Produkt ist nicht verfügbar
| BUK9Y7R2-60E,115 |
|
Hersteller: NEXPERIA
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 72A; Idm: 405A; 167W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 72A
Pulsed drain current: 405A
Power dissipation: 167W
Case: LFPAK56; PowerSO8; SOT669
Gate-source voltage: ±10V
On-state resistance: 16.3mΩ
Mounting: SMD
Gate charge: 35nC
Kind of package: reel; tape
Kind of channel: enhanced
Application: automotive industry
Anzahl je Verpackung: 1 Stücke
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 72A; Idm: 405A; 167W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 72A
Pulsed drain current: 405A
Power dissipation: 167W
Case: LFPAK56; PowerSO8; SOT669
Gate-source voltage: ±10V
On-state resistance: 16.3mΩ
Mounting: SMD
Gate charge: 35nC
Kind of package: reel; tape
Kind of channel: enhanced
Application: automotive industry
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
| BUK9Y7R6-40E,115 |
|
Hersteller: NEXPERIA
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 56A; Idm: 315A; 95W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 56A
Pulsed drain current: 315A
Power dissipation: 95W
Case: LFPAK56; PowerSO8; SOT669
Gate-source voltage: ±10V
On-state resistance: 7.6mΩ
Mounting: SMD
Gate charge: 5.5nC
Kind of package: reel; tape
Kind of channel: enhanced
Features of semiconductor devices: logic level
Application: automotive industry
Anzahl je Verpackung: 1 Stücke
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 56A; Idm: 315A; 95W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 56A
Pulsed drain current: 315A
Power dissipation: 95W
Case: LFPAK56; PowerSO8; SOT669
Gate-source voltage: ±10V
On-state resistance: 7.6mΩ
Mounting: SMD
Gate charge: 5.5nC
Kind of package: reel; tape
Kind of channel: enhanced
Features of semiconductor devices: logic level
Application: automotive industry
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
| BUK9Y8R5-80EX |
|
Hersteller: NEXPERIA
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 80V; 75A; Idm: 423A; 238W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 80V
Drain current: 75A
Pulsed drain current: 423A
Power dissipation: 238W
Case: LFPAK56; PowerSO8; SOT669
Gate-source voltage: ±10V
On-state resistance: 21.3mΩ
Mounting: SMD
Gate charge: 54.7nC
Kind of package: reel; tape
Kind of channel: enhanced
Application: automotive industry
Anzahl je Verpackung: 1500 Stücke
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 80V; 75A; Idm: 423A; 238W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 80V
Drain current: 75A
Pulsed drain current: 423A
Power dissipation: 238W
Case: LFPAK56; PowerSO8; SOT669
Gate-source voltage: ±10V
On-state resistance: 21.3mΩ
Mounting: SMD
Gate charge: 54.7nC
Kind of package: reel; tape
Kind of channel: enhanced
Application: automotive industry
Anzahl je Verpackung: 1500 Stücke
Produkt ist nicht verfügbar
| BZA456A,115 |
|
Hersteller: NEXPERIA
Category: Transil diodes - arrays
Description: Diode: TVS array; 3.75A; 24W; quadruple,common anode; reel,tape
Type of diode: TVS array
Max. forward impulse current: 3.75A
Peak pulse power dissipation: 24W
Semiconductor structure: common anode; quadruple
Mounting: SMD
Case: SC74; SOT457; TSOP6
Max. off-state voltage: 5.6V
Features of semiconductor devices: ESD protection
Leakage current: 2µA
Kind of package: reel; tape
Anzahl je Verpackung: 5 Stücke
Category: Transil diodes - arrays
Description: Diode: TVS array; 3.75A; 24W; quadruple,common anode; reel,tape
Type of diode: TVS array
Max. forward impulse current: 3.75A
Peak pulse power dissipation: 24W
Semiconductor structure: common anode; quadruple
Mounting: SMD
Case: SC74; SOT457; TSOP6
Max. off-state voltage: 5.6V
Features of semiconductor devices: ESD protection
Leakage current: 2µA
Kind of package: reel; tape
Anzahl je Verpackung: 5 Stücke
auf Bestellung 2989 Stücke:
Lieferzeit 7-14 Tag (e)| Anzahl | Preis ohne MwSt |
|---|---|
| 310+ | 0.23 EUR |
| 400+ | 0.18 EUR |
| 455+ | 0.16 EUR |
| 540+ | 0.13 EUR |
| BZA462A,115 |
|
Hersteller: NEXPERIA
Category: Transil diodes - arrays
Description: Diode: TVS array; 3.75A; 24W; quadruple,common anode; reel,tape
Type of diode: TVS array
Max. forward impulse current: 3.75A
Peak pulse power dissipation: 24W
Semiconductor structure: common anode; quadruple
Mounting: SMD
Case: SC74; SOT457; TSOP6
Max. off-state voltage: 6.2V
Features of semiconductor devices: ESD protection
Leakage current: 0.7µA
Kind of package: reel; tape
Anzahl je Verpackung: 5 Stücke
Category: Transil diodes - arrays
Description: Diode: TVS array; 3.75A; 24W; quadruple,common anode; reel,tape
Type of diode: TVS array
Max. forward impulse current: 3.75A
Peak pulse power dissipation: 24W
Semiconductor structure: common anode; quadruple
Mounting: SMD
Case: SC74; SOT457; TSOP6
Max. off-state voltage: 6.2V
Features of semiconductor devices: ESD protection
Leakage current: 0.7µA
Kind of package: reel; tape
Anzahl je Verpackung: 5 Stücke
Produkt ist nicht verfügbar
| BZA856A,115 |
|
Hersteller: NEXPERIA
Category: Transil diodes - arrays
Description: Diode: TVS array; 3.75A; 24W; quadruple,common anode; reel,tape
Case: SC88A; SOT353
Mounting: SMD
Kind of package: reel; tape
Peak pulse power dissipation: 24W
Max. off-state voltage: 5.6V
Semiconductor structure: common anode; quadruple
Max. forward impulse current: 3.75A
Leakage current: 2µA
Type of diode: TVS array
Features of semiconductor devices: ESD protection
Anzahl je Verpackung: 5 Stücke
Category: Transil diodes - arrays
Description: Diode: TVS array; 3.75A; 24W; quadruple,common anode; reel,tape
Case: SC88A; SOT353
Mounting: SMD
Kind of package: reel; tape
Peak pulse power dissipation: 24W
Max. off-state voltage: 5.6V
Semiconductor structure: common anode; quadruple
Max. forward impulse current: 3.75A
Leakage current: 2µA
Type of diode: TVS array
Features of semiconductor devices: ESD protection
Anzahl je Verpackung: 5 Stücke
Produkt ist nicht verfügbar
| BZA856AVL,115 |
|
Hersteller: NEXPERIA
Category: Transil diodes - arrays
Description: Diode: TVS array; 3.5A; 6W; quadruple,common anode; SC88A,SOT353
Case: SC88A; SOT353
Mounting: SMD
Kind of package: reel; tape
Peak pulse power dissipation: 6W
Max. off-state voltage: 5.6V
Semiconductor structure: common anode; quadruple
Max. forward impulse current: 3.5A
Leakage current: 0.2µA
Type of diode: TVS array
Features of semiconductor devices: ESD protection
Anzahl je Verpackung: 5 Stücke
Category: Transil diodes - arrays
Description: Diode: TVS array; 3.5A; 6W; quadruple,common anode; SC88A,SOT353
Case: SC88A; SOT353
Mounting: SMD
Kind of package: reel; tape
Peak pulse power dissipation: 6W
Max. off-state voltage: 5.6V
Semiconductor structure: common anode; quadruple
Max. forward impulse current: 3.5A
Leakage current: 0.2µA
Type of diode: TVS array
Features of semiconductor devices: ESD protection
Anzahl je Verpackung: 5 Stücke
Produkt ist nicht verfügbar
| BZA962A,115 |
|
Hersteller: NEXPERIA
Category: Transil diodes - arrays
Description: Diode: TVS array; 4A; 15W; quadruple,common anode; SOT665
Type of diode: TVS array
Max. forward impulse current: 4A
Peak pulse power dissipation: 15W
Semiconductor structure: common anode; quadruple
Mounting: SMD
Case: SOT665
Max. off-state voltage: 6.2V
Features of semiconductor devices: ESD protection
Leakage current: 500pA
Kind of package: reel; tape
Anzahl je Verpackung: 5 Stücke
Category: Transil diodes - arrays
Description: Diode: TVS array; 4A; 15W; quadruple,common anode; SOT665
Type of diode: TVS array
Max. forward impulse current: 4A
Peak pulse power dissipation: 15W
Semiconductor structure: common anode; quadruple
Mounting: SMD
Case: SOT665
Max. off-state voltage: 6.2V
Features of semiconductor devices: ESD protection
Leakage current: 500pA
Kind of package: reel; tape
Anzahl je Verpackung: 5 Stücke
Produkt ist nicht verfügbar
| BZA968A,115 |
|
Hersteller: NEXPERIA
Category: Transil diodes - arrays
Description: Diode: TVS array; 4A; 14W; quadruple,common anode; SOT665
Case: SOT665
Mounting: SMD
Kind of package: reel; tape
Semiconductor structure: common anode; quadruple
Max. off-state voltage: 6.8V
Features of semiconductor devices: ESD protection
Max. forward impulse current: 4A
Leakage current: 100pA
Type of diode: TVS array
Peak pulse power dissipation: 14W
Anzahl je Verpackung: 5 Stücke
Category: Transil diodes - arrays
Description: Diode: TVS array; 4A; 14W; quadruple,common anode; SOT665
Case: SOT665
Mounting: SMD
Kind of package: reel; tape
Semiconductor structure: common anode; quadruple
Max. off-state voltage: 6.8V
Features of semiconductor devices: ESD protection
Max. forward impulse current: 4A
Leakage current: 100pA
Type of diode: TVS array
Peak pulse power dissipation: 14W
Anzahl je Verpackung: 5 Stücke
Produkt ist nicht verfügbar
| BZB784-C10,115 |
|
Hersteller: NEXPERIA
Category: SMD Zener diodes
Description: Diode: Zener; 0.35W; 10V; SMD; reel,tape; SOT323; Ifmax: 200mA
Mounting: SMD
Case: SOT323
Zener voltage: 10V
Type of diode: Zener
Leakage current: 0.2µA
Semiconductor structure: common anode; double
Power dissipation: 0.35W
Max. forward voltage: 0.9V
Max. load current: 0.2A
Kind of package: reel; tape
Tolerance: ±5%
Anzahl je Verpackung: 5 Stücke
Category: SMD Zener diodes
Description: Diode: Zener; 0.35W; 10V; SMD; reel,tape; SOT323; Ifmax: 200mA
Mounting: SMD
Case: SOT323
Zener voltage: 10V
Type of diode: Zener
Leakage current: 0.2µA
Semiconductor structure: common anode; double
Power dissipation: 0.35W
Max. forward voltage: 0.9V
Max. load current: 0.2A
Kind of package: reel; tape
Tolerance: ±5%
Anzahl je Verpackung: 5 Stücke
Produkt ist nicht verfügbar
| BZB784-C12,115 |
|
Hersteller: NEXPERIA
Category: SMD Zener diodes
Description: Diode: Zener; 0.35W; 12V; SMD; reel,tape; SOT323; Ifmax: 200mA
Mounting: SMD
Case: SOT323
Zener voltage: 12V
Type of diode: Zener
Leakage current: 0.1µA
Semiconductor structure: common anode; double
Power dissipation: 0.35W
Max. forward voltage: 0.9V
Max. load current: 0.2A
Kind of package: reel; tape
Tolerance: ±5%
Anzahl je Verpackung: 5 Stücke
Category: SMD Zener diodes
Description: Diode: Zener; 0.35W; 12V; SMD; reel,tape; SOT323; Ifmax: 200mA
Mounting: SMD
Case: SOT323
Zener voltage: 12V
Type of diode: Zener
Leakage current: 0.1µA
Semiconductor structure: common anode; double
Power dissipation: 0.35W
Max. forward voltage: 0.9V
Max. load current: 0.2A
Kind of package: reel; tape
Tolerance: ±5%
Anzahl je Verpackung: 5 Stücke
auf Bestellung 1710 Stücke:
Lieferzeit 7-14 Tag (e)| Anzahl | Preis ohne MwSt |
|---|---|
| 970+ | 0.074 EUR |
| 1105+ | 0.065 EUR |
| 1250+ | 0.057 EUR |
| 1450+ | 0.049 EUR |
| 1535+ | 0.047 EUR |
| BZB784-C15,115 |
|
Hersteller: NEXPERIA
Category: SMD Zener diodes
Description: Diode: Zener; 0.35W; 15V; SMD; reel,tape; SOT323; Ifmax: 200mA
Mounting: SMD
Case: SOT323
Zener voltage: 15V
Type of diode: Zener
Leakage current: 50nA
Semiconductor structure: common anode; double
Power dissipation: 0.35W
Max. forward voltage: 0.9V
Max. load current: 0.2A
Kind of package: reel; tape
Tolerance: ±5%
Anzahl je Verpackung: 20 Stücke
Category: SMD Zener diodes
Description: Diode: Zener; 0.35W; 15V; SMD; reel,tape; SOT323; Ifmax: 200mA
Mounting: SMD
Case: SOT323
Zener voltage: 15V
Type of diode: Zener
Leakage current: 50nA
Semiconductor structure: common anode; double
Power dissipation: 0.35W
Max. forward voltage: 0.9V
Max. load current: 0.2A
Kind of package: reel; tape
Tolerance: ±5%
Anzahl je Verpackung: 20 Stücke
auf Bestellung 2980 Stücke:
Lieferzeit 7-14 Tag (e)| Anzahl | Preis ohne MwSt |
|---|---|
| 1000+ | 0.072 EUR |
| 1120+ | 0.065 EUR |
| 1460+ | 0.05 EUR |
| 1540+ | 0.047 EUR |
| BZB784-C2V7,115 |
|
Hersteller: NEXPERIA
Category: SMD Zener diodes
Description: Diode: Zener; 0.35W; 2.7V; SMD; reel,tape; SOT323; Ifmax: 200mA
Case: SOT323
Mounting: SMD
Kind of package: reel; tape
Tolerance: ±5%
Power dissipation: 0.35W
Type of diode: Zener
Max. load current: 0.2A
Max. forward voltage: 0.9V
Semiconductor structure: common anode; double
Zener voltage: 2.7V
Leakage current: 20µA
Anzahl je Verpackung: 5 Stücke
Category: SMD Zener diodes
Description: Diode: Zener; 0.35W; 2.7V; SMD; reel,tape; SOT323; Ifmax: 200mA
Case: SOT323
Mounting: SMD
Kind of package: reel; tape
Tolerance: ±5%
Power dissipation: 0.35W
Type of diode: Zener
Max. load current: 0.2A
Max. forward voltage: 0.9V
Semiconductor structure: common anode; double
Zener voltage: 2.7V
Leakage current: 20µA
Anzahl je Verpackung: 5 Stücke
Produkt ist nicht verfügbar
| BZB784-C3V3,115 |
|
Hersteller: NEXPERIA
Category: SMD Zener diodes
Description: Diode: Zener; 0.35W; 3.3V; SMD; reel,tape; SOT323; Ifmax: 200mA
Type of diode: Zener
Power dissipation: 0.35W
Zener voltage: 3.3V
Mounting: SMD
Tolerance: ±5%
Kind of package: reel; tape
Max. forward voltage: 0.9V
Case: SOT323
Max. load current: 0.2A
Semiconductor structure: common anode; double
Leakage current: 5µA
Anzahl je Verpackung: 5 Stücke
Category: SMD Zener diodes
Description: Diode: Zener; 0.35W; 3.3V; SMD; reel,tape; SOT323; Ifmax: 200mA
Type of diode: Zener
Power dissipation: 0.35W
Zener voltage: 3.3V
Mounting: SMD
Tolerance: ±5%
Kind of package: reel; tape
Max. forward voltage: 0.9V
Case: SOT323
Max. load current: 0.2A
Semiconductor structure: common anode; double
Leakage current: 5µA
Anzahl je Verpackung: 5 Stücke
Produkt ist nicht verfügbar
| BZB784-C3V9,115 |
|
Hersteller: NEXPERIA
Category: SMD Zener diodes
Description: Diode: Zener; 0.35W; 3.8V; SMD; reel,tape; SOT323; Ifmax: 200mA
Type of diode: Zener
Power dissipation: 0.35W
Zener voltage: 3.8V
Kind of package: reel; tape
Case: SOT323
Mounting: SMD
Tolerance: ±5%
Semiconductor structure: common anode; double
Leakage current: 3µA
Max. load current: 0.2A
Max. forward voltage: 0.9V
Anzahl je Verpackung: 5 Stücke
Category: SMD Zener diodes
Description: Diode: Zener; 0.35W; 3.8V; SMD; reel,tape; SOT323; Ifmax: 200mA
Type of diode: Zener
Power dissipation: 0.35W
Zener voltage: 3.8V
Kind of package: reel; tape
Case: SOT323
Mounting: SMD
Tolerance: ±5%
Semiconductor structure: common anode; double
Leakage current: 3µA
Max. load current: 0.2A
Max. forward voltage: 0.9V
Anzahl je Verpackung: 5 Stücke
auf Bestellung 3000 Stücke:
Lieferzeit 7-14 Tag (e)| Anzahl | Preis ohne MwSt |
|---|---|
| 970+ | 0.074 EUR |
| 1105+ | 0.065 EUR |
| 1250+ | 0.057 EUR |
| 1520+ | 0.047 EUR |
| 1605+ | 0.045 EUR |
| BZB784-C4V3,115 |
|
Hersteller: NEXPERIA
Category: SMD Zener diodes
Description: Diode: Zener; 0.35W; 4.3V; SMD; reel,tape; SOT323; Ifmax: 200mA
Type of diode: Zener
Power dissipation: 0.35W
Zener voltage: 4.3V
Mounting: SMD
Tolerance: ±5%
Kind of package: reel; tape
Max. forward voltage: 0.9V
Case: SOT323
Max. load current: 0.2A
Semiconductor structure: common anode; double
Leakage current: 3µA
Anzahl je Verpackung: 5 Stücke
Category: SMD Zener diodes
Description: Diode: Zener; 0.35W; 4.3V; SMD; reel,tape; SOT323; Ifmax: 200mA
Type of diode: Zener
Power dissipation: 0.35W
Zener voltage: 4.3V
Mounting: SMD
Tolerance: ±5%
Kind of package: reel; tape
Max. forward voltage: 0.9V
Case: SOT323
Max. load current: 0.2A
Semiconductor structure: common anode; double
Leakage current: 3µA
Anzahl je Verpackung: 5 Stücke
Produkt ist nicht verfügbar