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BSS138P,215 BSS138P,215 NEXPERIA BSS138P.215.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 0.36A; 350mW; SOT23,TO236AB
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 0.36A
Power dissipation: 0.35W
Case: SOT23; TO236AB
Gate-source voltage: ±20V
On-state resistance: 1.6Ω
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
auf Bestellung 32918 Stücke:
Lieferzeit 7-14 Tag (e)
685+0.1 EUR
1475+ 0.048 EUR
2058+ 0.035 EUR
2174+ 0.033 EUR
Mindestbestellmenge: 685
BSS138PS,115 BSS138PS,115 NEXPERIA BSS138PS.pdf Category: Multi channel transistors
Description: Transistor: N-MOSFET x2; unipolar; 60V; 200mA; Idm: 1.2A; 420mW
Type of transistor: N-MOSFET x2
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 0.2A
Pulsed drain current: 1.2A
Power dissipation: 0.42W
Case: SC88; SOT363; TSSOP6
Gate-source voltage: ±20V
On-state resistance: 1.6Ω
Mounting: SMD
Gate charge: 0.8nC
Kind of package: reel; tape
Kind of channel: enhanced
Anzahl je Verpackung: 10 Stücke
auf Bestellung 1790 Stücke:
Lieferzeit 7-14 Tag (e)
570+0.13 EUR
630+ 0.11 EUR
830+ 0.087 EUR
880+ 0.082 EUR
Mindestbestellmenge: 570
BSS138PW,115 BSS138PW,115 NEXPERIA BSS138PW.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 0.32A; 260mW; SC70,SOT323
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 0.32A
Power dissipation: 0.26W
Case: SC70; SOT323
Gate-source voltage: ±20V
On-state resistance: 0.9Ω
Mounting: SMD
Gate charge: 0.8nC
Kind of package: reel; tape
Kind of channel: enhanced
Anzahl je Verpackung: 5 Stücke
auf Bestellung 25139 Stücke:
Lieferzeit 7-14 Tag (e)
575+0.12 EUR
1090+ 0.066 EUR
1520+ 0.047 EUR
1610+ 0.044 EUR
Mindestbestellmenge: 575
BSS192,115 BSS192,115 NEXPERIA BSS192.pdf Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -240V; -0.12A; 560mW; SC62,SOT89
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -240V
Drain current: -120mA
Power dissipation: 0.56W
Case: SC62; SOT89
Gate-source voltage: ±20V
On-state resistance: 25Ω
Mounting: SMD
Gate charge: 5nC
Kind of package: reel; tape
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
BSS63,215 BSS63,215 NEXPERIA BSS63.pdf Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 100V; 0.1A; 250mW; SOT23,TO236AB
Type of transistor: PNP
Polarisation: bipolar
Collector-emitter voltage: 100V
Collector current: 0.1A
Power dissipation: 0.25W
Case: SOT23; TO236AB
Mounting: SMD
Kind of package: reel; tape
Frequency: 85MHz
Anzahl je Verpackung: 5 Stücke
auf Bestellung 2845 Stücke:
Lieferzeit 7-14 Tag (e)
380+0.19 EUR
785+ 0.092 EUR
870+ 0.082 EUR
1095+ 0.065 EUR
1160+ 0.062 EUR
Mindestbestellmenge: 380
BSS64,215 BSS64,215 NEXPERIA BSS64.pdf Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 80V; 0.1A; 250mW; SOT23,TO236AB
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 80V
Collector current: 0.1A
Power dissipation: 0.25W
Case: SOT23; TO236AB
Mounting: SMD
Kind of package: reel; tape
Frequency: 60...100MHz
Anzahl je Verpackung: 5 Stücke
Produkt ist nicht verfügbar
BSS84,215 BSS84,215 NEXPERIA BSS84.215.pdf Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -50V; -0.13A; 250mW; SOT23,TO236AB
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -50V
Drain current: -130mA
Power dissipation: 0.25W
Case: SOT23; TO236AB
Gate-source voltage: ±20V
On-state resistance: 10Ω
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
auf Bestellung 25202 Stücke:
Lieferzeit 7-14 Tag (e)
676+0.11 EUR
1102+ 0.065 EUR
1244+ 0.057 EUR
1563+ 0.046 EUR
1651+ 0.043 EUR
Mindestbestellmenge: 676
BSS84AK,215 BSS84AK,215 NEXPERIA BSS84AK.pdf Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -50V; -0.12A; 420mW; SOT23,TO236AB
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -50V
Drain current: -0.12A
Power dissipation: 0.42W
Case: SOT23; TO236AB
Gate-source voltage: ±20V
On-state resistance: 13.5Ω
Mounting: SMD
Gate charge: 0.35nC
Kind of package: reel; tape
Kind of channel: enhanced
Anzahl je Verpackung: 5 Stücke
auf Bestellung 7299 Stücke:
Lieferzeit 7-14 Tag (e)
625+0.11 EUR
1395+ 0.051 EUR
1950+ 0.037 EUR
2060+ 0.035 EUR
Mindestbestellmenge: 625
BSS84AKS,115 BSS84AKS,115 NEXPERIA BSS84AKS.pdf Category: Multi channel transistors
Description: Transistor: P-MOSFET x2; unipolar; -50V; -0.1A; 445mW
Type of transistor: P-MOSFET x2
Polarisation: unipolar
Drain-source voltage: -50V
Drain current: -0.1A
Power dissipation: 445mW
Case: SC88; SOT363; TSSOP6
Gate-source voltage: ±20V
On-state resistance: 13.5Ω
Mounting: SMD
Gate charge: 0.35nC
Kind of package: reel; tape
Kind of channel: enhanced
Anzahl je Verpackung: 5 Stücke
auf Bestellung 1280 Stücke:
Lieferzeit 7-14 Tag (e)
370+0.19 EUR
610+ 0.12 EUR
680+ 0.11 EUR
825+ 0.087 EUR
875+ 0.082 EUR
Mindestbestellmenge: 370
BSS84AKV,115 NEXPERIA BSS84AKV.pdf Category: Multi channel transistors
Description: Transistor: P-MOSFET x2; unipolar; -50V; -110mA; Idm: -0.7A; 500mW
Type of transistor: P-MOSFET x2
Polarisation: unipolar
Drain-source voltage: -50V
Drain current: -110mA
Pulsed drain current: -0.7A
Power dissipation: 0.5W
Case: SOT666
Gate-source voltage: ±20V
On-state resistance: 13.5Ω
Mounting: SMD
Gate charge: 0.35nC
Kind of package: reel; tape
Kind of channel: enhanced
Anzahl je Verpackung: 5 Stücke
Produkt ist nicht verfügbar
BSS84AKW,115 BSS84AKW,115 NEXPERIA BSS84AKW.pdf Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -50V; -0.095A; 310mW; SC70,SOT323
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -50V
Drain current: -0.095A
Power dissipation: 0.31W
Case: SC70; SOT323
Gate-source voltage: ±20V
On-state resistance: 13.5Ω
Mounting: SMD
Gate charge: 0.35nC
Kind of package: reel; tape
Kind of channel: enhanced
Anzahl je Verpackung: 5 Stücke
auf Bestellung 6030 Stücke:
Lieferzeit 7-14 Tag (e)
810+0.089 EUR
1390+ 0.051 EUR
1550+ 0.046 EUR
1950+ 0.037 EUR
2060+ 0.035 EUR
12000+ 0.034 EUR
Mindestbestellmenge: 810
BSS87,115 BSS87,115 NEXPERIA BSS87.115.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 200V; 0.2A; 580mW; SC62,SOT89
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 200V
Drain current: 0.2A
Power dissipation: 0.58W
Case: SC62; SOT89
Gate-source voltage: ±20V
On-state resistance: 7Ω
Mounting: SMD
Gate charge: 10nC
Kind of package: reel; tape
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
auf Bestellung 334 Stücke:
Lieferzeit 7-14 Tag (e)
171+0.42 EUR
197+ 0.36 EUR
219+ 0.33 EUR
274+ 0.26 EUR
289+ 0.25 EUR
Mindestbestellmenge: 171
BST39,115 BST39,115 NEXPERIA BST39.pdf Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 350V; 0.1A; 1.3W; SC62,SOT89
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 350V
Collector current: 0.1A
Power dissipation: 1.3W
Case: SC62; SOT89
Current gain: 40
Mounting: SMD
Kind of package: reel; tape
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
BST50,115 BST50,115 NEXPERIA BST50.115.pdf Category: NPN SMD Darlington transistors
Description: Transistor: NPN; bipolar; Darlington; 45V; 1A; 1.3W; SC62,SOT89
Type of transistor: NPN
Polarisation: bipolar
Kind of transistor: Darlington
Collector-emitter voltage: 45V
Collector current: 1A
Power dissipation: 1.3W
Case: SC62; SOT89
Mounting: SMD
Kind of package: reel; tape
Frequency: 200MHz
Anzahl je Verpackung: 1 Stücke
auf Bestellung 449 Stücke:
Lieferzeit 7-14 Tag (e)
109+0.66 EUR
121+ 0.59 EUR
152+ 0.47 EUR
161+ 0.44 EUR
Mindestbestellmenge: 109
BST51,115 BST51,115 NEXPERIA BST50.115.pdf Category: NPN SMD Darlington transistors
Description: Transistor: NPN; bipolar; Darlington; 60V; 1A; 1.3W; SC62,SOT89
Type of transistor: NPN
Polarisation: bipolar
Kind of transistor: Darlington
Collector-emitter voltage: 60V
Collector current: 1A
Power dissipation: 1.3W
Case: SC62; SOT89
Mounting: SMD
Kind of package: reel; tape
Frequency: 200MHz
Anzahl je Verpackung: 1 Stücke
auf Bestellung 879 Stücke:
Lieferzeit 7-14 Tag (e)
171+0.42 EUR
190+ 0.38 EUR
238+ 0.3 EUR
252+ 0.28 EUR
Mindestbestellmenge: 171
BST52,115 BST52,115 NEXPERIA BST50.115.pdf Category: NPN SMD Darlington transistors
Description: Transistor: NPN; bipolar; Darlington; 80V; 1A; 1.3W; SC62,SOT89
Mounting: SMD
Case: SC62; SOT89
Power dissipation: 1.3W
Kind of package: reel; tape
Collector-emitter voltage: 80V
Collector current: 1A
Type of transistor: NPN
Polarisation: bipolar
Kind of transistor: Darlington
Frequency: 200MHz
Anzahl je Verpackung: 1 Stücke
auf Bestellung 1467 Stücke:
Lieferzeit 7-14 Tag (e)
139+0.51 EUR
160+ 0.45 EUR
224+ 0.32 EUR
237+ 0.3 EUR
Mindestbestellmenge: 139
BST60,115 BST60,115 NEXPERIA BST60_61_62.pdf Category: PNP SMD Darlington transistors
Description: Transistor: PNP; bipolar; Darlington; 45V; 1A; 1.3W; SC62,SOT89
Type of transistor: PNP
Polarisation: bipolar
Kind of transistor: Darlington
Collector-emitter voltage: 45V
Collector current: 1A
Power dissipation: 1.3W
Case: SC62; SOT89
Mounting: SMD
Kind of package: reel; tape
Frequency: 200MHz
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
BST62,115
+1
 		BST62,115 NEXPERIA BST60_61_62.pdf Category: PNP SMD Darlington transistors
Description: Transistor: PNP; bipolar; 80V; 1A; 1.3W; SC62,SOT89
Type of transistor: PNP
Polarisation: bipolar
Collector-emitter voltage: 80V
Collector current: 1A
Power dissipation: 1.3W
Case: SC62; SOT89
Current gain: 2k
Mounting: SMD
Kind of package: reel; tape
Frequency: 200MHz
Anzahl je Verpackung: 1 Stücke
auf Bestellung 499 Stücke:
Lieferzeit 7-14 Tag (e)
180+0.4 EUR
205+ 0.35 EUR
230+ 0.31 EUR
244+ 0.29 EUR
1000+ 0.28 EUR
Mindestbestellmenge: 180
BST82,215 BST82,215 NEXPERIA BST82.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 0.19A; 830mW; SOT23,TO236AB
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 0.19A
Power dissipation: 0.83W
Case: SOT23; TO236AB
Gate-source voltage: ±20V
On-state resistance: 10Ω
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
auf Bestellung 56656 Stücke:
Lieferzeit 7-14 Tag (e)
152+0.47 EUR
195+ 0.37 EUR
248+ 0.29 EUR
296+ 0.24 EUR
353+ 0.2 EUR
481+ 0.15 EUR
511+ 0.14 EUR
Mindestbestellmenge: 152
BST82,235 BST82,235 NEXPERIA BST82.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 0.12A; Idm: 0.8A; 0.83W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 0.12A
Pulsed drain current: 0.8A
Power dissipation: 0.83W
Case: SOT23; TO236AB
Gate-source voltage: ±20V
On-state resistance: 23Ω
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhanced
Anzahl je Verpackung: 10000 Stücke
Produkt ist nicht verfügbar
BSV52,215 BSV52,215 NEXPERIA BSV52.pdf Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 12V; 0.1A; 250mW; SOT23,TO236AB
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 12V
Collector current: 0.1A
Power dissipation: 250mW
Case: SOT23; TO236AB
Mounting: SMD
Kind of package: reel; tape
Frequency: 500MHz
auf Bestellung 2557 Stücke:
Lieferzeit 7-14 Tag (e)
205+0.35 EUR
385+ 0.19 EUR
428+ 0.17 EUR
558+ 0.13 EUR
590+ 0.12 EUR
Mindestbestellmenge: 205
BUK4D38-20PX NEXPERIA BUK4D38-20P.pdf Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -20V; -11A; Idm: -72A; 19W
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -20V
Drain current: -11A
Pulsed drain current: -72A
Power dissipation: 19W
Case: DFN6; SOT1220
Gate-source voltage: ±12V
On-state resistance: 64mΩ
Mounting: SMD
Gate charge: 16nC
Kind of package: reel; tape
Kind of channel: enhanced
Application: automotive industry
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
BUK6607-55C,118 BUK6607-55C,118 NEXPERIA BUK6607-55C.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 55V; 74A; Idm: 420A; 158W
Mounting: SMD
Application: automotive industry
Power dissipation: 158W
Polarisation: unipolar
Kind of package: reel; tape
Features of semiconductor devices: logic level
Gate charge: 43nC
Kind of channel: enhanced
Gate-source voltage: ±15V
Pulsed drain current: 420A
Case: D2PAK; SOT404
Drain-source voltage: 55V
Drain current: 74A
On-state resistance: 14.3mΩ
Type of transistor: N-MOSFET
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
BUK6D120-40EX NEXPERIA BUK6D120-40E.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 3.6A; Idm: 23A; 7.5W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 3.6A
Pulsed drain current: 23A
Power dissipation: 7.5W
Case: DFN6; SOT1220
Gate-source voltage: ±20V
On-state resistance: 233mΩ
Mounting: SMD
Gate charge: 3.6nC
Kind of package: reel; tape
Kind of channel: enhanced
Application: automotive industry
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
BUK6D120-60PX NEXPERIA BUK6D120-60P.pdf Category: SMD P channel transistors
Description: Transistor: P-MOSFET; Trench; unipolar; -60V; -5.1A; Idm: -32A; 15W
Type of transistor: P-MOSFET
Technology: Trench
Polarisation: unipolar
Drain-source voltage: -60V
Drain current: -5.1A
Pulsed drain current: -32A
Power dissipation: 15W
Case: DFN2020MD-6; SOT1220
On-state resistance: 256mΩ
Mounting: SMD
Gate charge: 18nC
Kind of package: reel; tape
Kind of channel: enhanced
Application: automotive industry
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
BUK6D125-60EX NEXPERIA BUK6D125-60E.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 5.3A; Idm: 30A; 15W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 5.3A
Pulsed drain current: 30A
Power dissipation: 15W
Case: DFN6; SOT1220
Gate-source voltage: ±20V
On-state resistance: 271mΩ
Mounting: SMD
Gate charge: 6nC
Kind of package: reel; tape
Kind of channel: enhanced
Application: automotive industry
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
BUK6D210-60EX NEXPERIA BUK6D210-60E.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 4.1A; Idm: 23A; 15W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 4.1A
Pulsed drain current: 23A
Power dissipation: 15W
Case: DFN6; SOT1220
Gate-source voltage: ±20V
On-state resistance: 456mΩ
Mounting: SMD
Gate charge: 3.8nC
Kind of package: reel; tape
Kind of channel: enhanced
Application: automotive industry
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
BUK6D22-30EX NEXPERIA BUK6D22-30E.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 15.7A; Idm: 89A; 19W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 15.7A
Pulsed drain current: 89A
Power dissipation: 19W
Case: DFN6; SOT1220
Gate-source voltage: ±20V
On-state resistance: 38mΩ
Mounting: SMD
Gate charge: 14nC
Kind of package: reel; tape
Kind of channel: enhanced
Application: automotive industry
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
BUK6D23-40EX NEXPERIA BUK6D23-40E.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 12A; Idm: 76A; 15W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 12A
Pulsed drain current: 76A
Power dissipation: 15W
Case: DFN6; SOT1220
Gate-source voltage: ±20V
On-state resistance: 43mΩ
Mounting: SMD
Gate charge: 19nC
Kind of package: reel; tape
Kind of channel: enhanced
Application: automotive industry
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
BUK6D230-80EX NEXPERIA BUK6D230-80E.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 80V; 3.6A; Idm: 20.4A; 15W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 80V
Drain current: 3.6A
Pulsed drain current: 20.4A
Power dissipation: 15W
Case: DFN6; SOT1220
Gate-source voltage: ±20V
On-state resistance: 575mΩ
Mounting: SMD
Gate charge: 7.2nC
Kind of package: reel; tape
Kind of channel: enhanced
Application: automotive industry
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
BUK6D30-40EX NEXPERIA BUK6D30-40E.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 12.8A; Idm: 73A; 19W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 12.8A
Pulsed drain current: 73A
Power dissipation: 19W
Case: DFN6; SOT1220
Gate-source voltage: ±20V
On-state resistance: 57mΩ
Mounting: SMD
Gate charge: 12nC
Kind of package: reel; tape
Kind of channel: enhanced
Application: automotive industry
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
BUK6D38-30EX NEXPERIA BUK6D38-30E.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 12A; Idm: 68A; 19W
Kind of package: reel; tape
Type of transistor: N-MOSFET
Application: automotive industry
Power dissipation: 19W
Polarisation: unipolar
Gate charge: 8nC
Kind of channel: enhanced
Gate-source voltage: ±20V
Pulsed drain current: 68A
Mounting: SMD
Case: DFN6; SOT1220
Drain-source voltage: 30V
Drain current: 12A
On-state resistance: 65mΩ
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
BUK6D385-100EX NEXPERIA BUK6D385-100E.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 2.6A; Idm: 15A; 15W
Kind of package: reel; tape
Type of transistor: N-MOSFET
Application: automotive industry
Power dissipation: 15W
Polarisation: unipolar
Gate charge: 6.8nC
Kind of channel: enhanced
Gate-source voltage: ±20V
Pulsed drain current: 15A
Mounting: SMD
Case: DFN6; SOT1220
Drain-source voltage: 100V
Drain current: 2.6A
On-state resistance: 1078mΩ
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
BUK6D43-40PX NEXPERIA BUK6D43-40P.pdf Category: SMD P channel transistors
Description: Transistor: P-MOSFET; Trench; unipolar; -40V; -8.9A; Idm: -56A; 15W
Type of transistor: P-MOSFET
Technology: Trench
Polarisation: unipolar
Drain-source voltage: -40V
Drain current: -8.9A
Pulsed drain current: -56A
Power dissipation: 15W
Case: DFN2020MD-6; SOT1220
Gate-source voltage: ±20V
On-state resistance: 81mΩ
Mounting: SMD
Gate charge: 36nC
Kind of package: reel; tape
Kind of channel: enhanced
Application: automotive industry
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
BUK6D43-60EX NEXPERIA BUK6D43-60E.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 8.2A; Idm: 52A; 15W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 8.2A
Pulsed drain current: 52A
Power dissipation: 15W
Case: DFN6; SOT1220
Gate-source voltage: ±20V
On-state resistance: 93mΩ
Mounting: SMD
Gate charge: 18nC
Kind of package: reel; tape
Kind of channel: enhanced
Application: automotive industry
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
BUK6D56-60EX NEXPERIA BUK6D56-60E.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 8A; Idm: 44A; 15W; DFN6,SOT1220
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 8A
Pulsed drain current: 44A
Power dissipation: 15W
Case: DFN6; SOT1220
Gate-source voltage: ±20V
On-state resistance: 0.122Ω
Mounting: SMD
Gate charge: 12nC
Kind of package: reel; tape
Kind of channel: enhanced
Application: automotive industry
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
BUK6D72-30EX NEXPERIA BUK6D72-30E.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 7.8A; Idm: 44A; 15W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 7.8A
Pulsed drain current: 44A
Power dissipation: 15W
Case: DFN6; SOT1220
Gate-source voltage: ±20V
On-state resistance: 124mΩ
Mounting: SMD
Gate charge: 3.3nC
Kind of package: reel; tape
Kind of channel: enhanced
Application: automotive industry
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
BUK6D77-60EX NEXPERIA BUK6D77-60E.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 7A; Idm: 42A; 18.8W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 7A
Pulsed drain current: 42A
Power dissipation: 18.8W
Case: DFN6; SOT1220
Gate-source voltage: ±20V
On-state resistance: 167mΩ
Mounting: SMD
Gate charge: 9.2nC
Kind of package: reel; tape
Kind of channel: enhanced
Application: automotive industry
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
BUK6D81-80EX NEXPERIA BUK6D81-80E.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 80V; 6.9A; Idm: 39A; 18.8W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 80V
Drain current: 6.9A
Pulsed drain current: 39A
Power dissipation: 18.8W
Case: DFN6; SOT1220
Gate-source voltage: ±20V
On-state resistance: 197mΩ
Mounting: SMD
Gate charge: 14.9nC
Kind of package: reel; tape
Kind of channel: enhanced
Application: automotive industry
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
BUK6Y10-30PX NEXPERIA BUK6Y10-30P.pdf Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -30V; -57A; Idm: -320A; 110W
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -30V
Drain current: -57A
Pulsed drain current: -320A
Power dissipation: 110W
Case: LFPAK56; PowerSO8; SOT669
Gate-source voltage: ±20V
On-state resistance: 25mΩ
Mounting: SMD
Gate charge: 64nC
Kind of package: reel; tape
Kind of channel: enhanced
Application: automotive industry
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
BUK6Y14-40PX BUK6Y14-40PX NEXPERIA BUK6Y14-40P.pdf Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -40V; -46A; Idm: -257A; 110W
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -40V
Drain current: -46A
Pulsed drain current: -257A
Power dissipation: 110W
Case: LFPAK56; PowerSO8; SOT669
Gate-source voltage: ±20V
On-state resistance: 25mΩ
Mounting: SMD
Gate charge: 64nC
Kind of package: reel; tape
Kind of channel: enhanced
Application: automotive industry
Anzahl je Verpackung: 1 Stücke
auf Bestellung 331 Stücke:
Lieferzeit 7-14 Tag (e)
50+1.43 EUR
58+ 1.24 EUR
76+ 0.94 EUR
81+ 0.89 EUR
500+ 0.86 EUR
Mindestbestellmenge: 50
BUK6Y19-30PX NEXPERIA BUK6Y19-30P.pdf Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -30V; -32A; Idm: -181A; 66W
Mounting: SMD
Application: automotive industry
Kind of package: reel; tape
Gate charge: 35nC
Kind of channel: enhanced
Gate-source voltage: ±20V
Pulsed drain current: -181A
Case: LFPAK56; PowerSO8; SOT669
Drain-source voltage: -30V
Drain current: -32A
On-state resistance: 50mΩ
Type of transistor: P-MOSFET
Power dissipation: 66W
Polarisation: unipolar
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
BUK6Y24-40PX NEXPERIA BUK6Y24-40P.pdf Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -40V; -27A; Idm: -155A; 66W
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -40V
Drain current: -27A
Pulsed drain current: -155A
Power dissipation: 66W
Case: LFPAK56; PowerSO8; SOT669
Gate-source voltage: ±20V
On-state resistance: 50mΩ
Mounting: SMD
Gate charge: 35nC
Kind of package: reel; tape
Kind of channel: enhanced
Application: automotive industry
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
BUK6Y33-60PX NEXPERIA BUK6Y33-60P.pdf Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -60V; -21A; Idm: -120A; 110W
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -60V
Drain current: -21A
Pulsed drain current: -120A
Power dissipation: 110W
Case: LFPAK56; PowerSO8; SOT669
Gate-source voltage: ±20V
On-state resistance: 69mΩ
Mounting: SMD
Gate charge: 69nC
Kind of package: reel; tape
Kind of channel: enhanced
Application: automotive industry
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
BUK6Y61-60PX NEXPERIA BUK6Y61-60P.pdf BUK6Y61-60PX SMD P channel transistors
Produkt ist nicht verfügbar
BUK7208-40B,118 NEXPERIA BUK7208-40B.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 75A; Idm: 420A; 167W; DPAK
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 75A
Pulsed drain current: 420A
Power dissipation: 167W
Case: DPAK
Gate-source voltage: ±20V
On-state resistance: 15.6mΩ
Mounting: SMD
Gate charge: 35nC
Kind of package: reel; tape
Kind of channel: enhanced
Application: automotive industry
Anzahl je Verpackung: 2500 Stücke
Produkt ist nicht verfügbar
BUK7212-55B,118 NEXPERIA BUK7212-55B.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 55V; 59A; Idm: 335A; 167W; DPAK
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 55V
Drain current: 59A
Pulsed drain current: 335A
Power dissipation: 167W
Case: DPAK
Gate-source voltage: ±20V
On-state resistance: 25mΩ
Mounting: SMD
Gate charge: 35nC
Kind of package: reel; tape
Kind of channel: enhanced
Application: automotive industry
Anzahl je Verpackung: 2500 Stücke
Produkt ist nicht verfügbar
BUK7214-75B,118 NEXPERIA BUK7214-75B.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 75V; 49A; Idm: 276A; 158W; DPAK
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 75V
Drain current: 49A
Pulsed drain current: 276A
Power dissipation: 158W
Case: DPAK
Gate-source voltage: ±20V
On-state resistance: 14mΩ
Mounting: SMD
Gate charge: 41nC
Kind of package: reel; tape
Kind of channel: enhanced
Application: automotive industry
Anzahl je Verpackung: 2500 Stücke
Produkt ist nicht verfügbar
BUK72150-55A,118 NEXPERIA BUK72150-55A.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 55V; 7A; Idm: 44A; 36W; DPAK
Polarisation: unipolar
Case: DPAK
Kind of package: reel; tape
Gate charge: 5.5nC
Kind of channel: enhanced
Gate-source voltage: ±20V
Pulsed drain current: 44A
Mounting: SMD
Drain-source voltage: 55V
Drain current: 7A
On-state resistance: 0.3Ω
Type of transistor: N-MOSFET
Application: automotive industry
Power dissipation: 36W
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
BUK7219-55A,118 NEXPERIA BUK7219-55A.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 55V; 39A; Idm: 250A; 114W; DPAK
Case: DPAK
Drain-source voltage: 55V
Drain current: 39A
On-state resistance: 38mΩ
Type of transistor: N-MOSFET
Application: automotive industry
Power dissipation: 114W
Polarisation: unipolar
Kind of package: reel; tape
Kind of channel: enhanced
Gate-source voltage: ±20V
Pulsed drain current: 250A
Mounting: SMD
Anzahl je Verpackung: 2500 Stücke
Produkt ist nicht verfügbar
BUK7227-100B,118 NEXPERIA BUK7227-100B.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 34A; Idm: 196A; 167W; DPAK
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 34A
Pulsed drain current: 196A
Power dissipation: 167W
Case: DPAK
Gate-source voltage: ±20V
On-state resistance: 70mΩ
Mounting: SMD
Gate charge: 37nC
Kind of package: reel; tape
Kind of channel: enhanced
Application: automotive industry
Anzahl je Verpackung: 2500 Stücke
Produkt ist nicht verfügbar
BUK7230-55A,118 NEXPERIA BUK7230-55A.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 55V; 27A; Idm: 150A; 88W; DPAK
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 55V
Drain current: 27A
Pulsed drain current: 150A
Power dissipation: 88W
Case: DPAK
Gate-source voltage: ±20V
On-state resistance: 60mΩ
Mounting: SMD
Gate charge: 24nC
Kind of package: reel; tape
Kind of channel: enhanced
Application: automotive industry
Anzahl je Verpackung: 2500 Stücke
Produkt ist nicht verfügbar
BUK7240-100A,118 NEXPERIA BUK7240-100A.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 24A; Idm: 136A; 114W; DPAK
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 24A
Pulsed drain current: 136A
Power dissipation: 114W
Case: DPAK
Gate-source voltage: ±20V
On-state resistance: 0.1Ω
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhanced
Application: automotive industry
Anzahl je Verpackung: 2500 Stücke
Produkt ist nicht verfügbar
BUK7275-100A,118 NEXPERIA BUK7275-100A.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 15.4A; Idm: 87A; 89W; DPAK
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 15.4A
Pulsed drain current: 87A
Power dissipation: 89W
Case: DPAK
Gate-source voltage: ±20V
On-state resistance: 187mΩ
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhanced
Application: automotive industry
Anzahl je Verpackung: 2500 Stücke
Produkt ist nicht verfügbar
BUK753R1-40E,127 NEXPERIA BUK753R1-40E.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 100A; Idm: 798A; 234W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 100A
Pulsed drain current: 798A
Power dissipation: 234W
Case: SOT78; TO220AB
Gate-source voltage: ±20V
On-state resistance: 5.9mΩ
Mounting: THT
Gate charge: 79nC
Kind of package: tube
Kind of channel: enhanced
Application: automotive industry
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
BUK7606-75B,118 NEXPERIA BUK7606-75B.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 75V; 75A; Idm: 638A; 300W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 75V
Drain current: 75A
Pulsed drain current: 638A
Power dissipation: 300W
Case: D2PAK; SOT404
Gate-source voltage: ±20V
On-state resistance: 11.8mΩ
Mounting: SMD
Gate charge: 91nC
Kind of package: reel; tape
Kind of channel: enhanced
Application: automotive industry
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
BUK7610-55AL,118 NEXPERIA BUK7610-55AL.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 55V; 75A; Idm: 490A; 300W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 55V
Drain current: 75A
Pulsed drain current: 490A
Power dissipation: 300W
Case: D2PAK; SOT404
Gate-source voltage: ±20V
On-state resistance: 20mΩ
Mounting: SMD
Gate charge: 124nC
Kind of package: reel; tape
Kind of channel: enhanced
Application: automotive industry
Anzahl je Verpackung: 800 Stücke
Produkt ist nicht verfügbar
BUK7613-60E,118 NEXPERIA BUK7613-60E.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 41A; Idm: 234A; 96W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 41A
Pulsed drain current: 234A
Power dissipation: 96W
Case: D2PAK; SOT404
Gate-source voltage: ±20V
On-state resistance: 28.2mΩ
Mounting: SMD
Gate charge: 22.9nC
Kind of package: reel; tape
Kind of channel: enhanced
Application: automotive industry
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
BUK761R6-40E,118 NEXPERIA BUK761R6-40E.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 120A; Idm: 1355A; 349W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 120A
Pulsed drain current: 1355A
Power dissipation: 349W
Case: D2PAK; SOT404
Gate-source voltage: ±20V
On-state resistance: 3mΩ
Mounting: SMD
Gate charge: 145nC
Kind of package: reel; tape
Kind of channel: enhanced
Application: automotive industry
Anzahl je Verpackung: 800 Stücke
Produkt ist nicht verfügbar
BUK7628-100A,118 BUK7628-100A,118 NEXPERIA BUK7628-100A.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 33A; 166W; D2PAK,SOT404
Kind of package: reel; tape
Drain-source voltage: 100V
Drain current: 33A
On-state resistance: 28mΩ
Type of transistor: N-MOSFET
Application: automotive industry
Power dissipation: 166W
Polarisation: unipolar
Kind of channel: enhanced
Gate-source voltage: ±20V
Mounting: SMD
Case: D2PAK; SOT404
Anzahl je Verpackung: 800 Stücke
Produkt ist nicht verfügbar
BSS138P,215 BSS138P.215.pdf
BSS138P,215
Hersteller: NEXPERIA
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 0.36A; 350mW; SOT23,TO236AB
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 0.36A
Power dissipation: 0.35W
Case: SOT23; TO236AB
Gate-source voltage: ±20V
On-state resistance: 1.6Ω
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
auf Bestellung 32918 Stücke:
Lieferzeit 7-14 Tag (e)
Anzahl Preis ohne MwSt
685+0.1 EUR
1475+ 0.048 EUR
2058+ 0.035 EUR
2174+ 0.033 EUR
Mindestbestellmenge: 685
BSS138PS,115 BSS138PS.pdf
BSS138PS,115
Hersteller: NEXPERIA
Category: Multi channel transistors
Description: Transistor: N-MOSFET x2; unipolar; 60V; 200mA; Idm: 1.2A; 420mW
Type of transistor: N-MOSFET x2
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 0.2A
Pulsed drain current: 1.2A
Power dissipation: 0.42W
Case: SC88; SOT363; TSSOP6
Gate-source voltage: ±20V
On-state resistance: 1.6Ω
Mounting: SMD
Gate charge: 0.8nC
Kind of package: reel; tape
Kind of channel: enhanced
Anzahl je Verpackung: 10 Stücke
auf Bestellung 1790 Stücke:
Lieferzeit 7-14 Tag (e)
Anzahl Preis ohne MwSt
570+0.13 EUR
630+ 0.11 EUR
830+ 0.087 EUR
880+ 0.082 EUR
Mindestbestellmenge: 570
BSS138PW,115 BSS138PW.pdf
BSS138PW,115
Hersteller: NEXPERIA
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 0.32A; 260mW; SC70,SOT323
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 0.32A
Power dissipation: 0.26W
Case: SC70; SOT323
Gate-source voltage: ±20V
On-state resistance: 0.9Ω
Mounting: SMD
Gate charge: 0.8nC
Kind of package: reel; tape
Kind of channel: enhanced
Anzahl je Verpackung: 5 Stücke
auf Bestellung 25139 Stücke:
Lieferzeit 7-14 Tag (e)
Anzahl Preis ohne MwSt
575+0.12 EUR
1090+ 0.066 EUR
1520+ 0.047 EUR
1610+ 0.044 EUR
Mindestbestellmenge: 575
BSS192,115 BSS192.pdf
BSS192,115
Hersteller: NEXPERIA
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -240V; -0.12A; 560mW; SC62,SOT89
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -240V
Drain current: -120mA
Power dissipation: 0.56W
Case: SC62; SOT89
Gate-source voltage: ±20V
On-state resistance: 25Ω
Mounting: SMD
Gate charge: 5nC
Kind of package: reel; tape
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
BSS63,215 BSS63.pdf
BSS63,215
Hersteller: NEXPERIA
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 100V; 0.1A; 250mW; SOT23,TO236AB
Type of transistor: PNP
Polarisation: bipolar
Collector-emitter voltage: 100V
Collector current: 0.1A
Power dissipation: 0.25W
Case: SOT23; TO236AB
Mounting: SMD
Kind of package: reel; tape
Frequency: 85MHz
Anzahl je Verpackung: 5 Stücke
auf Bestellung 2845 Stücke:
Lieferzeit 7-14 Tag (e)
Anzahl Preis ohne MwSt
380+0.19 EUR
785+ 0.092 EUR
870+ 0.082 EUR
1095+ 0.065 EUR
1160+ 0.062 EUR
Mindestbestellmenge: 380
BSS64,215 BSS64.pdf
BSS64,215
Hersteller: NEXPERIA
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 80V; 0.1A; 250mW; SOT23,TO236AB
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 80V
Collector current: 0.1A
Power dissipation: 0.25W
Case: SOT23; TO236AB
Mounting: SMD
Kind of package: reel; tape
Frequency: 60...100MHz
Anzahl je Verpackung: 5 Stücke
Produkt ist nicht verfügbar
BSS84,215 BSS84.215.pdf
BSS84,215
Hersteller: NEXPERIA
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -50V; -0.13A; 250mW; SOT23,TO236AB
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -50V
Drain current: -130mA
Power dissipation: 0.25W
Case: SOT23; TO236AB
Gate-source voltage: ±20V
On-state resistance: 10Ω
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
auf Bestellung 25202 Stücke:
Lieferzeit 7-14 Tag (e)
Anzahl Preis ohne MwSt
676+0.11 EUR
1102+ 0.065 EUR
1244+ 0.057 EUR
1563+ 0.046 EUR
1651+ 0.043 EUR
Mindestbestellmenge: 676
BSS84AK,215 BSS84AK.pdf
BSS84AK,215
Hersteller: NEXPERIA
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -50V; -0.12A; 420mW; SOT23,TO236AB
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -50V
Drain current: -0.12A
Power dissipation: 0.42W
Case: SOT23; TO236AB
Gate-source voltage: ±20V
On-state resistance: 13.5Ω
Mounting: SMD
Gate charge: 0.35nC
Kind of package: reel; tape
Kind of channel: enhanced
Anzahl je Verpackung: 5 Stücke
auf Bestellung 7299 Stücke:
Lieferzeit 7-14 Tag (e)
Anzahl Preis ohne MwSt
625+0.11 EUR
1395+ 0.051 EUR
1950+ 0.037 EUR
2060+ 0.035 EUR
Mindestbestellmenge: 625
BSS84AKS,115 BSS84AKS.pdf
BSS84AKS,115
Hersteller: NEXPERIA
Category: Multi channel transistors
Description: Transistor: P-MOSFET x2; unipolar; -50V; -0.1A; 445mW
Type of transistor: P-MOSFET x2
Polarisation: unipolar
Drain-source voltage: -50V
Drain current: -0.1A
Power dissipation: 445mW
Case: SC88; SOT363; TSSOP6
Gate-source voltage: ±20V
On-state resistance: 13.5Ω
Mounting: SMD
Gate charge: 0.35nC
Kind of package: reel; tape
Kind of channel: enhanced
Anzahl je Verpackung: 5 Stücke
auf Bestellung 1280 Stücke:
Lieferzeit 7-14 Tag (e)
Anzahl Preis ohne MwSt
370+0.19 EUR
610+ 0.12 EUR
680+ 0.11 EUR
825+ 0.087 EUR
875+ 0.082 EUR
Mindestbestellmenge: 370
BSS84AKV,115 BSS84AKV.pdf
Hersteller: NEXPERIA
Category: Multi channel transistors
Description: Transistor: P-MOSFET x2; unipolar; -50V; -110mA; Idm: -0.7A; 500mW
Type of transistor: P-MOSFET x2
Polarisation: unipolar
Drain-source voltage: -50V
Drain current: -110mA
Pulsed drain current: -0.7A
Power dissipation: 0.5W
Case: SOT666
Gate-source voltage: ±20V
On-state resistance: 13.5Ω
Mounting: SMD
Gate charge: 0.35nC
Kind of package: reel; tape
Kind of channel: enhanced
Anzahl je Verpackung: 5 Stücke
Produkt ist nicht verfügbar
BSS84AKW,115 BSS84AKW.pdf
BSS84AKW,115
Hersteller: NEXPERIA
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -50V; -0.095A; 310mW; SC70,SOT323
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -50V
Drain current: -0.095A
Power dissipation: 0.31W
Case: SC70; SOT323
Gate-source voltage: ±20V
On-state resistance: 13.5Ω
Mounting: SMD
Gate charge: 0.35nC
Kind of package: reel; tape
Kind of channel: enhanced
Anzahl je Verpackung: 5 Stücke
auf Bestellung 6030 Stücke:
Lieferzeit 7-14 Tag (e)
Anzahl Preis ohne MwSt
810+0.089 EUR
1390+ 0.051 EUR
1550+ 0.046 EUR
1950+ 0.037 EUR
2060+ 0.035 EUR
12000+ 0.034 EUR
Mindestbestellmenge: 810
BSS87,115 BSS87.115.pdf
BSS87,115
Hersteller: NEXPERIA
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 200V; 0.2A; 580mW; SC62,SOT89
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 200V
Drain current: 0.2A
Power dissipation: 0.58W
Case: SC62; SOT89
Gate-source voltage: ±20V
On-state resistance: 7Ω
Mounting: SMD
Gate charge: 10nC
Kind of package: reel; tape
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
auf Bestellung 334 Stücke:
Lieferzeit 7-14 Tag (e)
Anzahl Preis ohne MwSt
171+0.42 EUR
197+ 0.36 EUR
219+ 0.33 EUR
274+ 0.26 EUR
289+ 0.25 EUR
Mindestbestellmenge: 171
BST39,115 BST39.pdf
BST39,115
Hersteller: NEXPERIA
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 350V; 0.1A; 1.3W; SC62,SOT89
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 350V
Collector current: 0.1A
Power dissipation: 1.3W
Case: SC62; SOT89
Current gain: 40
Mounting: SMD
Kind of package: reel; tape
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
BST50,115 BST50.115.pdf
BST50,115
Hersteller: NEXPERIA
Category: NPN SMD Darlington transistors
Description: Transistor: NPN; bipolar; Darlington; 45V; 1A; 1.3W; SC62,SOT89
Type of transistor: NPN
Polarisation: bipolar
Kind of transistor: Darlington
Collector-emitter voltage: 45V
Collector current: 1A
Power dissipation: 1.3W
Case: SC62; SOT89
Mounting: SMD
Kind of package: reel; tape
Frequency: 200MHz
Anzahl je Verpackung: 1 Stücke
auf Bestellung 449 Stücke:
Lieferzeit 7-14 Tag (e)
Anzahl Preis ohne MwSt
109+0.66 EUR
121+ 0.59 EUR
152+ 0.47 EUR
161+ 0.44 EUR
Mindestbestellmenge: 109
BST51,115 BST50.115.pdf
BST51,115
Hersteller: NEXPERIA
Category: NPN SMD Darlington transistors
Description: Transistor: NPN; bipolar; Darlington; 60V; 1A; 1.3W; SC62,SOT89
Type of transistor: NPN
Polarisation: bipolar
Kind of transistor: Darlington
Collector-emitter voltage: 60V
Collector current: 1A
Power dissipation: 1.3W
Case: SC62; SOT89
Mounting: SMD
Kind of package: reel; tape
Frequency: 200MHz
Anzahl je Verpackung: 1 Stücke
auf Bestellung 879 Stücke:
Lieferzeit 7-14 Tag (e)
Anzahl Preis ohne MwSt
171+0.42 EUR
190+ 0.38 EUR
238+ 0.3 EUR
252+ 0.28 EUR
Mindestbestellmenge: 171
BST52,115 BST50.115.pdf
BST52,115
Hersteller: NEXPERIA
Category: NPN SMD Darlington transistors
Description: Transistor: NPN; bipolar; Darlington; 80V; 1A; 1.3W; SC62,SOT89
Mounting: SMD
Case: SC62; SOT89
Power dissipation: 1.3W
Kind of package: reel; tape
Collector-emitter voltage: 80V
Collector current: 1A
Type of transistor: NPN
Polarisation: bipolar
Kind of transistor: Darlington
Frequency: 200MHz
Anzahl je Verpackung: 1 Stücke
auf Bestellung 1467 Stücke:
Lieferzeit 7-14 Tag (e)
Anzahl Preis ohne MwSt
139+0.51 EUR
160+ 0.45 EUR
224+ 0.32 EUR
237+ 0.3 EUR
Mindestbestellmenge: 139
BST60,115 BST60_61_62.pdf
BST60,115
Hersteller: NEXPERIA
Category: PNP SMD Darlington transistors
Description: Transistor: PNP; bipolar; Darlington; 45V; 1A; 1.3W; SC62,SOT89
Type of transistor: PNP
Polarisation: bipolar
Kind of transistor: Darlington
Collector-emitter voltage: 45V
Collector current: 1A
Power dissipation: 1.3W
Case: SC62; SOT89
Mounting: SMD
Kind of package: reel; tape
Frequency: 200MHz
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
BST62,115 BST60_61_62.pdf
BST62,115
+1
Hersteller: NEXPERIA
Category: PNP SMD Darlington transistors
Description: Transistor: PNP; bipolar; 80V; 1A; 1.3W; SC62,SOT89
Type of transistor: PNP
Polarisation: bipolar
Collector-emitter voltage: 80V
Collector current: 1A
Power dissipation: 1.3W
Case: SC62; SOT89
Current gain: 2k
Mounting: SMD
Kind of package: reel; tape
Frequency: 200MHz
Anzahl je Verpackung: 1 Stücke
auf Bestellung 499 Stücke:
Lieferzeit 7-14 Tag (e)
Anzahl Preis ohne MwSt
180+0.4 EUR
205+ 0.35 EUR
230+ 0.31 EUR
244+ 0.29 EUR
1000+ 0.28 EUR
Mindestbestellmenge: 180
BST82,215 BST82.pdf
BST82,215
Hersteller: NEXPERIA
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 0.19A; 830mW; SOT23,TO236AB
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 0.19A
Power dissipation: 0.83W
Case: SOT23; TO236AB
Gate-source voltage: ±20V
On-state resistance: 10Ω
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
auf Bestellung 56656 Stücke:
Lieferzeit 7-14 Tag (e)
Anzahl Preis ohne MwSt
152+0.47 EUR
195+ 0.37 EUR
248+ 0.29 EUR
296+ 0.24 EUR
353+ 0.2 EUR
481+ 0.15 EUR
511+ 0.14 EUR
Mindestbestellmenge: 152
BST82,235 BST82.pdf
BST82,235
Hersteller: NEXPERIA
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 0.12A; Idm: 0.8A; 0.83W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 0.12A
Pulsed drain current: 0.8A
Power dissipation: 0.83W
Case: SOT23; TO236AB
Gate-source voltage: ±20V
On-state resistance: 23Ω
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhanced
Anzahl je Verpackung: 10000 Stücke
Produkt ist nicht verfügbar
BSV52,215 BSV52.pdf
BSV52,215
Hersteller: NEXPERIA
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 12V; 0.1A; 250mW; SOT23,TO236AB
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 12V
Collector current: 0.1A
Power dissipation: 250mW
Case: SOT23; TO236AB
Mounting: SMD
Kind of package: reel; tape
Frequency: 500MHz
auf Bestellung 2557 Stücke:
Lieferzeit 7-14 Tag (e)
Anzahl Preis ohne MwSt
205+0.35 EUR
385+ 0.19 EUR
428+ 0.17 EUR
558+ 0.13 EUR
590+ 0.12 EUR
Mindestbestellmenge: 205
BUK4D38-20PX BUK4D38-20P.pdf
Hersteller: NEXPERIA
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -20V; -11A; Idm: -72A; 19W
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -20V
Drain current: -11A
Pulsed drain current: -72A
Power dissipation: 19W
Case: DFN6; SOT1220
Gate-source voltage: ±12V
On-state resistance: 64mΩ
Mounting: SMD
Gate charge: 16nC
Kind of package: reel; tape
Kind of channel: enhanced
Application: automotive industry
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
BUK6607-55C,118 BUK6607-55C.pdf
BUK6607-55C,118
Hersteller: NEXPERIA
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 55V; 74A; Idm: 420A; 158W
Mounting: SMD
Application: automotive industry
Power dissipation: 158W
Polarisation: unipolar
Kind of package: reel; tape
Features of semiconductor devices: logic level
Gate charge: 43nC
Kind of channel: enhanced
Gate-source voltage: ±15V
Pulsed drain current: 420A
Case: D2PAK; SOT404
Drain-source voltage: 55V
Drain current: 74A
On-state resistance: 14.3mΩ
Type of transistor: N-MOSFET
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
BUK6D120-40EX BUK6D120-40E.pdf
Hersteller: NEXPERIA
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 3.6A; Idm: 23A; 7.5W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 3.6A
Pulsed drain current: 23A
Power dissipation: 7.5W
Case: DFN6; SOT1220
Gate-source voltage: ±20V
On-state resistance: 233mΩ
Mounting: SMD
Gate charge: 3.6nC
Kind of package: reel; tape
Kind of channel: enhanced
Application: automotive industry
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
BUK6D120-60PX BUK6D120-60P.pdf
Hersteller: NEXPERIA
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; Trench; unipolar; -60V; -5.1A; Idm: -32A; 15W
Type of transistor: P-MOSFET
Technology: Trench
Polarisation: unipolar
Drain-source voltage: -60V
Drain current: -5.1A
Pulsed drain current: -32A
Power dissipation: 15W
Case: DFN2020MD-6; SOT1220
On-state resistance: 256mΩ
Mounting: SMD
Gate charge: 18nC
Kind of package: reel; tape
Kind of channel: enhanced
Application: automotive industry
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
BUK6D125-60EX BUK6D125-60E.pdf
Hersteller: NEXPERIA
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 5.3A; Idm: 30A; 15W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 5.3A
Pulsed drain current: 30A
Power dissipation: 15W
Case: DFN6; SOT1220
Gate-source voltage: ±20V
On-state resistance: 271mΩ
Mounting: SMD
Gate charge: 6nC
Kind of package: reel; tape
Kind of channel: enhanced
Application: automotive industry
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
BUK6D210-60EX BUK6D210-60E.pdf
Hersteller: NEXPERIA
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 4.1A; Idm: 23A; 15W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 4.1A
Pulsed drain current: 23A
Power dissipation: 15W
Case: DFN6; SOT1220
Gate-source voltage: ±20V
On-state resistance: 456mΩ
Mounting: SMD
Gate charge: 3.8nC
Kind of package: reel; tape
Kind of channel: enhanced
Application: automotive industry
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
BUK6D22-30EX BUK6D22-30E.pdf
Hersteller: NEXPERIA
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 15.7A; Idm: 89A; 19W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 15.7A
Pulsed drain current: 89A
Power dissipation: 19W
Case: DFN6; SOT1220
Gate-source voltage: ±20V
On-state resistance: 38mΩ
Mounting: SMD
Gate charge: 14nC
Kind of package: reel; tape
Kind of channel: enhanced
Application: automotive industry
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
BUK6D23-40EX BUK6D23-40E.pdf
Hersteller: NEXPERIA
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 12A; Idm: 76A; 15W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 12A
Pulsed drain current: 76A
Power dissipation: 15W
Case: DFN6; SOT1220
Gate-source voltage: ±20V
On-state resistance: 43mΩ
Mounting: SMD
Gate charge: 19nC
Kind of package: reel; tape
Kind of channel: enhanced
Application: automotive industry
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
BUK6D230-80EX BUK6D230-80E.pdf
Hersteller: NEXPERIA
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 80V; 3.6A; Idm: 20.4A; 15W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 80V
Drain current: 3.6A
Pulsed drain current: 20.4A
Power dissipation: 15W
Case: DFN6; SOT1220
Gate-source voltage: ±20V
On-state resistance: 575mΩ
Mounting: SMD
Gate charge: 7.2nC
Kind of package: reel; tape
Kind of channel: enhanced
Application: automotive industry
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
BUK6D30-40EX BUK6D30-40E.pdf
Hersteller: NEXPERIA
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 12.8A; Idm: 73A; 19W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 12.8A
Pulsed drain current: 73A
Power dissipation: 19W
Case: DFN6; SOT1220
Gate-source voltage: ±20V
On-state resistance: 57mΩ
Mounting: SMD
Gate charge: 12nC
Kind of package: reel; tape
Kind of channel: enhanced
Application: automotive industry
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
BUK6D38-30EX BUK6D38-30E.pdf
Hersteller: NEXPERIA
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 12A; Idm: 68A; 19W
Kind of package: reel; tape
Type of transistor: N-MOSFET
Application: automotive industry
Power dissipation: 19W
Polarisation: unipolar
Gate charge: 8nC
Kind of channel: enhanced
Gate-source voltage: ±20V
Pulsed drain current: 68A
Mounting: SMD
Case: DFN6; SOT1220
Drain-source voltage: 30V
Drain current: 12A
On-state resistance: 65mΩ
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
BUK6D385-100EX BUK6D385-100E.pdf
Hersteller: NEXPERIA
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 2.6A; Idm: 15A; 15W
Kind of package: reel; tape
Type of transistor: N-MOSFET
Application: automotive industry
Power dissipation: 15W
Polarisation: unipolar
Gate charge: 6.8nC
Kind of channel: enhanced
Gate-source voltage: ±20V
Pulsed drain current: 15A
Mounting: SMD
Case: DFN6; SOT1220
Drain-source voltage: 100V
Drain current: 2.6A
On-state resistance: 1078mΩ
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
BUK6D43-40PX BUK6D43-40P.pdf
Hersteller: NEXPERIA
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; Trench; unipolar; -40V; -8.9A; Idm: -56A; 15W
Type of transistor: P-MOSFET
Technology: Trench
Polarisation: unipolar
Drain-source voltage: -40V
Drain current: -8.9A
Pulsed drain current: -56A
Power dissipation: 15W
Case: DFN2020MD-6; SOT1220
Gate-source voltage: ±20V
On-state resistance: 81mΩ
Mounting: SMD
Gate charge: 36nC
Kind of package: reel; tape
Kind of channel: enhanced
Application: automotive industry
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
BUK6D43-60EX BUK6D43-60E.pdf
Hersteller: NEXPERIA
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 8.2A; Idm: 52A; 15W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 8.2A
Pulsed drain current: 52A
Power dissipation: 15W
Case: DFN6; SOT1220
Gate-source voltage: ±20V
On-state resistance: 93mΩ
Mounting: SMD
Gate charge: 18nC
Kind of package: reel; tape
Kind of channel: enhanced
Application: automotive industry
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
BUK6D56-60EX BUK6D56-60E.pdf
Hersteller: NEXPERIA
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 8A; Idm: 44A; 15W; DFN6,SOT1220
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 8A
Pulsed drain current: 44A
Power dissipation: 15W
Case: DFN6; SOT1220
Gate-source voltage: ±20V
On-state resistance: 0.122Ω
Mounting: SMD
Gate charge: 12nC
Kind of package: reel; tape
Kind of channel: enhanced
Application: automotive industry
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
BUK6D72-30EX BUK6D72-30E.pdf
Hersteller: NEXPERIA
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 7.8A; Idm: 44A; 15W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 7.8A
Pulsed drain current: 44A
Power dissipation: 15W
Case: DFN6; SOT1220
Gate-source voltage: ±20V
On-state resistance: 124mΩ
Mounting: SMD
Gate charge: 3.3nC
Kind of package: reel; tape
Kind of channel: enhanced
Application: automotive industry
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
BUK6D77-60EX BUK6D77-60E.pdf
Hersteller: NEXPERIA
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 7A; Idm: 42A; 18.8W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 7A
Pulsed drain current: 42A
Power dissipation: 18.8W
Case: DFN6; SOT1220
Gate-source voltage: ±20V
On-state resistance: 167mΩ
Mounting: SMD
Gate charge: 9.2nC
Kind of package: reel; tape
Kind of channel: enhanced
Application: automotive industry
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
BUK6D81-80EX BUK6D81-80E.pdf
Hersteller: NEXPERIA
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 80V; 6.9A; Idm: 39A; 18.8W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 80V
Drain current: 6.9A
Pulsed drain current: 39A
Power dissipation: 18.8W
Case: DFN6; SOT1220
Gate-source voltage: ±20V
On-state resistance: 197mΩ
Mounting: SMD
Gate charge: 14.9nC
Kind of package: reel; tape
Kind of channel: enhanced
Application: automotive industry
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
BUK6Y10-30PX BUK6Y10-30P.pdf
Hersteller: NEXPERIA
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -30V; -57A; Idm: -320A; 110W
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -30V
Drain current: -57A
Pulsed drain current: -320A
Power dissipation: 110W
Case: LFPAK56; PowerSO8; SOT669
Gate-source voltage: ±20V
On-state resistance: 25mΩ
Mounting: SMD
Gate charge: 64nC
Kind of package: reel; tape
Kind of channel: enhanced
Application: automotive industry
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
BUK6Y14-40PX BUK6Y14-40P.pdf
BUK6Y14-40PX
Hersteller: NEXPERIA
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -40V; -46A; Idm: -257A; 110W
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -40V
Drain current: -46A
Pulsed drain current: -257A
Power dissipation: 110W
Case: LFPAK56; PowerSO8; SOT669
Gate-source voltage: ±20V
On-state resistance: 25mΩ
Mounting: SMD
Gate charge: 64nC
Kind of package: reel; tape
Kind of channel: enhanced
Application: automotive industry
Anzahl je Verpackung: 1 Stücke
auf Bestellung 331 Stücke:
Lieferzeit 7-14 Tag (e)
Anzahl Preis ohne MwSt
50+1.43 EUR
58+ 1.24 EUR
76+ 0.94 EUR
81+ 0.89 EUR
500+ 0.86 EUR
Mindestbestellmenge: 50
BUK6Y19-30PX BUK6Y19-30P.pdf
Hersteller: NEXPERIA
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -30V; -32A; Idm: -181A; 66W
Mounting: SMD
Application: automotive industry
Kind of package: reel; tape
Gate charge: 35nC
Kind of channel: enhanced
Gate-source voltage: ±20V
Pulsed drain current: -181A
Case: LFPAK56; PowerSO8; SOT669
Drain-source voltage: -30V
Drain current: -32A
On-state resistance: 50mΩ
Type of transistor: P-MOSFET
Power dissipation: 66W
Polarisation: unipolar
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
BUK6Y24-40PX BUK6Y24-40P.pdf
Hersteller: NEXPERIA
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -40V; -27A; Idm: -155A; 66W
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -40V
Drain current: -27A
Pulsed drain current: -155A
Power dissipation: 66W
Case: LFPAK56; PowerSO8; SOT669
Gate-source voltage: ±20V
On-state resistance: 50mΩ
Mounting: SMD
Gate charge: 35nC
Kind of package: reel; tape
Kind of channel: enhanced
Application: automotive industry
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
BUK6Y33-60PX BUK6Y33-60P.pdf
Hersteller: NEXPERIA
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -60V; -21A; Idm: -120A; 110W
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -60V
Drain current: -21A
Pulsed drain current: -120A
Power dissipation: 110W
Case: LFPAK56; PowerSO8; SOT669
Gate-source voltage: ±20V
On-state resistance: 69mΩ
Mounting: SMD
Gate charge: 69nC
Kind of package: reel; tape
Kind of channel: enhanced
Application: automotive industry
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
BUK6Y61-60PX BUK6Y61-60P.pdf
Hersteller: NEXPERIA
BUK6Y61-60PX SMD P channel transistors
Produkt ist nicht verfügbar
BUK7208-40B,118 BUK7208-40B.pdf
Hersteller: NEXPERIA
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 75A; Idm: 420A; 167W; DPAK
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 75A
Pulsed drain current: 420A
Power dissipation: 167W
Case: DPAK
Gate-source voltage: ±20V
On-state resistance: 15.6mΩ
Mounting: SMD
Gate charge: 35nC
Kind of package: reel; tape
Kind of channel: enhanced
Application: automotive industry
Anzahl je Verpackung: 2500 Stücke
Produkt ist nicht verfügbar
BUK7212-55B,118 BUK7212-55B.pdf
Hersteller: NEXPERIA
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 55V; 59A; Idm: 335A; 167W; DPAK
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 55V
Drain current: 59A
Pulsed drain current: 335A
Power dissipation: 167W
Case: DPAK
Gate-source voltage: ±20V
On-state resistance: 25mΩ
Mounting: SMD
Gate charge: 35nC
Kind of package: reel; tape
Kind of channel: enhanced
Application: automotive industry
Anzahl je Verpackung: 2500 Stücke
Produkt ist nicht verfügbar
BUK7214-75B,118 BUK7214-75B.pdf
Hersteller: NEXPERIA
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 75V; 49A; Idm: 276A; 158W; DPAK
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 75V
Drain current: 49A
Pulsed drain current: 276A
Power dissipation: 158W
Case: DPAK
Gate-source voltage: ±20V
On-state resistance: 14mΩ
Mounting: SMD
Gate charge: 41nC
Kind of package: reel; tape
Kind of channel: enhanced
Application: automotive industry
Anzahl je Verpackung: 2500 Stücke
Produkt ist nicht verfügbar
BUK72150-55A,118 BUK72150-55A.pdf
Hersteller: NEXPERIA
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 55V; 7A; Idm: 44A; 36W; DPAK
Polarisation: unipolar
Case: DPAK
Kind of package: reel; tape
Gate charge: 5.5nC
Kind of channel: enhanced
Gate-source voltage: ±20V
Pulsed drain current: 44A
Mounting: SMD
Drain-source voltage: 55V
Drain current: 7A
On-state resistance: 0.3Ω
Type of transistor: N-MOSFET
Application: automotive industry
Power dissipation: 36W
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
BUK7219-55A,118 BUK7219-55A.pdf
Hersteller: NEXPERIA
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 55V; 39A; Idm: 250A; 114W; DPAK
Case: DPAK
Drain-source voltage: 55V
Drain current: 39A
On-state resistance: 38mΩ
Type of transistor: N-MOSFET
Application: automotive industry
Power dissipation: 114W
Polarisation: unipolar
Kind of package: reel; tape
Kind of channel: enhanced
Gate-source voltage: ±20V
Pulsed drain current: 250A
Mounting: SMD
Anzahl je Verpackung: 2500 Stücke
Produkt ist nicht verfügbar
BUK7227-100B,118 BUK7227-100B.pdf
Hersteller: NEXPERIA
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 34A; Idm: 196A; 167W; DPAK
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 34A
Pulsed drain current: 196A
Power dissipation: 167W
Case: DPAK
Gate-source voltage: ±20V
On-state resistance: 70mΩ
Mounting: SMD
Gate charge: 37nC
Kind of package: reel; tape
Kind of channel: enhanced
Application: automotive industry
Anzahl je Verpackung: 2500 Stücke
Produkt ist nicht verfügbar
BUK7230-55A,118 BUK7230-55A.pdf
Hersteller: NEXPERIA
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 55V; 27A; Idm: 150A; 88W; DPAK
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 55V
Drain current: 27A
Pulsed drain current: 150A
Power dissipation: 88W
Case: DPAK
Gate-source voltage: ±20V
On-state resistance: 60mΩ
Mounting: SMD
Gate charge: 24nC
Kind of package: reel; tape
Kind of channel: enhanced
Application: automotive industry
Anzahl je Verpackung: 2500 Stücke
Produkt ist nicht verfügbar
BUK7240-100A,118 BUK7240-100A.pdf
Hersteller: NEXPERIA
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 24A; Idm: 136A; 114W; DPAK
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 24A
Pulsed drain current: 136A
Power dissipation: 114W
Case: DPAK
Gate-source voltage: ±20V
On-state resistance: 0.1Ω
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhanced
Application: automotive industry
Anzahl je Verpackung: 2500 Stücke
Produkt ist nicht verfügbar
BUK7275-100A,118 BUK7275-100A.pdf
Hersteller: NEXPERIA
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 15.4A; Idm: 87A; 89W; DPAK
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 15.4A
Pulsed drain current: 87A
Power dissipation: 89W
Case: DPAK
Gate-source voltage: ±20V
On-state resistance: 187mΩ
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhanced
Application: automotive industry
Anzahl je Verpackung: 2500 Stücke
Produkt ist nicht verfügbar
BUK753R1-40E,127 BUK753R1-40E.pdf
Hersteller: NEXPERIA
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 100A; Idm: 798A; 234W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 100A
Pulsed drain current: 798A
Power dissipation: 234W
Case: SOT78; TO220AB
Gate-source voltage: ±20V
On-state resistance: 5.9mΩ
Mounting: THT
Gate charge: 79nC
Kind of package: tube
Kind of channel: enhanced
Application: automotive industry
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
BUK7606-75B,118 BUK7606-75B.pdf
Hersteller: NEXPERIA
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 75V; 75A; Idm: 638A; 300W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 75V
Drain current: 75A
Pulsed drain current: 638A
Power dissipation: 300W
Case: D2PAK; SOT404
Gate-source voltage: ±20V
On-state resistance: 11.8mΩ
Mounting: SMD
Gate charge: 91nC
Kind of package: reel; tape
Kind of channel: enhanced
Application: automotive industry
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
BUK7610-55AL,118 BUK7610-55AL.pdf
Hersteller: NEXPERIA
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 55V; 75A; Idm: 490A; 300W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 55V
Drain current: 75A
Pulsed drain current: 490A
Power dissipation: 300W
Case: D2PAK; SOT404
Gate-source voltage: ±20V
On-state resistance: 20mΩ
Mounting: SMD
Gate charge: 124nC
Kind of package: reel; tape
Kind of channel: enhanced
Application: automotive industry
Anzahl je Verpackung: 800 Stücke
Produkt ist nicht verfügbar
BUK7613-60E,118 BUK7613-60E.pdf
Hersteller: NEXPERIA
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 41A; Idm: 234A; 96W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 41A
Pulsed drain current: 234A
Power dissipation: 96W
Case: D2PAK; SOT404
Gate-source voltage: ±20V
On-state resistance: 28.2mΩ
Mounting: SMD
Gate charge: 22.9nC
Kind of package: reel; tape
Kind of channel: enhanced
Application: automotive industry
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
BUK761R6-40E,118 BUK761R6-40E.pdf
Hersteller: NEXPERIA
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 120A; Idm: 1355A; 349W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 120A
Pulsed drain current: 1355A
Power dissipation: 349W
Case: D2PAK; SOT404
Gate-source voltage: ±20V
On-state resistance: 3mΩ
Mounting: SMD
Gate charge: 145nC
Kind of package: reel; tape
Kind of channel: enhanced
Application: automotive industry
Anzahl je Verpackung: 800 Stücke
Produkt ist nicht verfügbar
BUK7628-100A,118 BUK7628-100A.pdf
BUK7628-100A,118
Hersteller: NEXPERIA
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 33A; 166W; D2PAK,SOT404
Kind of package: reel; tape
Drain-source voltage: 100V
Drain current: 33A
On-state resistance: 28mΩ
Type of transistor: N-MOSFET
Application: automotive industry
Power dissipation: 166W
Polarisation: unipolar
Kind of channel: enhanced
Gate-source voltage: ±20V
Mounting: SMD
Case: D2PAK; SOT404
Anzahl je Verpackung: 800 Stücke
Produkt ist nicht verfügbar
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