| Foto | Bezeichnung | Hersteller | Beschreibung |
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FFSP2065A | onsemi |
 Description: DIODE SIL CARB 650V 25A TO220-2Packaging: Tube Package / Case: TO-220-2 Mounting Type: Through Hole Speed: No Recovery Time > 500mA (Io) Reverse Recovery Time (trr): 0 ns Technology: SiC (Silicon Carbide) Schottky Capacitance @ Vr, F: 1085pF @ 1V, 100kHz Current - Average Rectified (Io): 25A Supplier Device Package: TO-220-2 Operating Temperature - Junction: -55°C ~ 175°C Voltage - DC Reverse (Vr) (Max): 650 V Voltage - Forward (Vf) (Max) @ If: 1.75 V @ 20 A Current - Reverse Leakage @ Vr: 200 µA @ 650 V |
auf Bestellung 54299 Stücke: Lieferzeit 10-14 Tag (e) |
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FFSP2065B | onsemi |
Description: DIODE SIL CARB 650V 22.5A TO220 Packaging: Tube Package / Case: TO-220-2 Mounting Type: Through Hole Speed: No Recovery Time > 500mA (Io) Reverse Recovery Time (trr): 0 ns Technology: SiC (Silicon Carbide) Schottky Capacitance @ Vr, F: 866pF @ 1V, 100kHz Current - Average Rectified (Io): 22.5A Supplier Device Package: TO-220-2 Operating Temperature - Junction: -55°C ~ 175°C Voltage - DC Reverse (Vr) (Max): 650 V Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 20 A Current - Reverse Leakage @ Vr: 40 µA @ 650 V |
auf Bestellung 1982 Stücke: Lieferzeit 10-14 Tag (e) |
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FFSP2065B-F085 | onsemi |
Description: DIODE SIL CARB 650V 20A TO220-2 Packaging: Tube Package / Case: TO-220-2 Mounting Type: Through Hole Speed: No Recovery Time > 500mA (Io) Reverse Recovery Time (trr): 0 ns Technology: SiC (Silicon Carbide) Schottky Capacitance @ Vr, F: 866pF @ 1V, 100kHz Current - Average Rectified (Io): 20A Supplier Device Package: TO-220-2 Operating Temperature - Junction: -55°C ~ 175°C Grade: Automotive Voltage - DC Reverse (Vr) (Max): 650 V Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 20 A Current - Reverse Leakage @ Vr: 40 µA @ 650 V Qualification: AEC-Q101 |
auf Bestellung 580 Stücke: Lieferzeit 10-14 Tag (e) |
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| NL3S325FCT2G | onsemi |
Description: IC AUDIO PROCESSOR 9WLCSP Packaging: Tape & Reel (TR) Package / Case: 9-UFBGA, WLCSP Mounting Type: Surface Mount Function: Audio Processor Interface: Analog Operating Temperature: -40°C ~ 85°C (TA) Voltage - Supply: 1.6V ~ 3.6V Applications: Audio Systems Supplier Device Package: 9-WLCSP (1.9x1.9) Number of Channels: 2 |
Produkt ist nicht verfügbar |
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| NL3S325FCT2G | onsemi |
Description: IC AUDIO PROCESSOR 9WLCSP Packaging: Bulk Package / Case: 9-UFBGA, WLCSP Mounting Type: Surface Mount Function: Audio Processor Interface: Analog Operating Temperature: -40°C ~ 85°C (TA) Voltage - Supply: 1.6V ~ 3.6V Applications: Audio Systems Supplier Device Package: 9-WLCSP (1.9x1.9) Number of Channels: 2 |
auf Bestellung 828000 Stücke: Lieferzeit 10-14 Tag (e) |
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MC74HCT241ADWR2G | onsemi |
Description: IC BUFF NON-INVERT 5.5V 20-SOIC Packaging: Tape & Reel (TR) Package / Case: 20-SOIC (0.295", 7.50mm Width) Output Type: 3-State Mounting Type: Surface Mount Number of Elements: 2 Logic Type: Buffer, Non-Inverting Operating Temperature: -55°C ~ 125°C (TA) Voltage - Supply: 4.5V ~ 5.5V Number of Bits per Element: 4 Current - Output High, Low: 6mA, 6mA Supplier Device Package: 20-SOIC |
auf Bestellung 29000 Stücke: Lieferzeit 10-14 Tag (e) |
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MC74HCT241ADWR2G | onsemi |
Description: IC BUFF NON-INVERT 5.5V 20-SOIC Packaging: Cut Tape (CT) Package / Case: 20-SOIC (0.295", 7.50mm Width) Output Type: 3-State Mounting Type: Surface Mount Number of Elements: 2 Logic Type: Buffer, Non-Inverting Operating Temperature: -55°C ~ 125°C (TA) Voltage - Supply: 4.5V ~ 5.5V Number of Bits per Element: 4 Current - Output High, Low: 6mA, 6mA Supplier Device Package: 20-SOIC |
auf Bestellung 29000 Stücke: Lieferzeit 10-14 Tag (e) |
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FQA19N60 | onsemi |
Description: MOSFET N-CH 600V 18.5A TO3PN Packaging: Tube Package / Case: TO-3P-3, SC-65-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 18.5A (Tc) Rds On (Max) @ Id, Vgs: 380mOhm @ 9.3A, 10V Power Dissipation (Max): 300W (Tc) Vgs(th) (Max) @ Id: 5V @ 250µA Supplier Device Package: TO-3PN Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±30V Drain to Source Voltage (Vdss): 600 V Gate Charge (Qg) (Max) @ Vgs: 90 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 3600 pF @ 25 V |
Produkt ist nicht verfügbar |
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| LV88562JA-AH | onsemi |
Description: NON-AUTO BLDC MOTOR DRIVE Packaging: Tape & Reel (TR) Package / Case: 20-LFSOP (0.173", 4.40mm Width) Mounting Type: Surface Mount Function: Controller - Commutation, Direction Management Current - Output: 50mA Interface: PWM Operating Temperature: -40°C ~ 105°C (TA) Output Configuration: Pre-Driver - Half Bridge Voltage - Supply: 3.9V ~ 16V Applications: General Purpose Supplier Device Package: 20-SSOPJ Motor Type - AC, DC: Brushless DC (BLDC) |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||||
| LV88564RTXG | onsemi |
Description: NON-AUTO BLDC MOTOR DRIVE Packaging: Bulk Package / Case: 20-VFQFN Mounting Type: Surface Mount Function: Controller - Commutation, Direction Management Current - Output: 50mA Interface: PWM Operating Temperature: -40°C ~ 105°C (TA) Output Configuration: Pre-Driver - Half Bridge Voltage - Supply: 3.9V ~ 16V Applications: General Purpose Supplier Device Package: 20-VCT (3x3) Motor Type - AC, DC: Brushless DC (BLDC) |
auf Bestellung 10000 Stücke: Lieferzeit 10-14 Tag (e) |
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MICROFJ-30035-TSV-TR | onsemi |
Description: SENSOR PHOTODIODE 420NM 8WBGA Packaging: Tape & Reel (TR) Package / Case: 8-WBGA Wavelength: 420nm Mounting Type: Surface Mount Diode Type: Avalanche Operating Temperature: -40°C ~ 85°C Response Time: 110ps Spectral Range: 200nm ~ 900nm Active Area: 9.43mm² Current - Dark (Typ): 1.9µA Voltage - DC Reverse (Vr) (Max): 24.7 V |
auf Bestellung 3000 Stücke: Lieferzeit 10-14 Tag (e) |
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MICROFJ-30035-TSV-TR | onsemi |
Description: SENSOR PHOTODIODE 420NM 8WBGA Packaging: Cut Tape (CT) Package / Case: 8-WBGA Wavelength: 420nm Mounting Type: Surface Mount Diode Type: Avalanche Operating Temperature: -40°C ~ 85°C Response Time: 110ps Spectral Range: 200nm ~ 900nm Active Area: 9.43mm² Current - Dark (Typ): 1.9µA Voltage - DC Reverse (Vr) (Max): 24.7 V |
auf Bestellung 3075 Stücke: Lieferzeit 10-14 Tag (e) |
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MICROFC-30035-SMT-TR1 | onsemi |
Description: SENSOR PHOTODIODE 420NM 4SMD Packaging: Strip Package / Case: 4-SMD, No Lead Wavelength: 420nm Mounting Type: Surface Mount Diode Type: Avalanche Operating Temperature: -40°C ~ 85°C Response Time: 600ps Spectral Range: 300nm ~ 950nm Color - Enhanced: Blue Active Area: 9mm² Current - Dark (Typ): 154nA Voltage - DC Reverse (Vr) (Max): 24.7 V |
auf Bestellung 29 Stücke: Lieferzeit 10-14 Tag (e) |
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MC74AC86DTR2 | onsemi |
Description: IC GATE XOR 4CH 2-INP 14TSSOP Packaging: Bulk Package / Case: 14-TSSOP (0.173", 4.40mm Width) Mounting Type: Surface Mount Logic Type: XOR (Exclusive OR) Operating Temperature: -40°C ~ 85°C Voltage - Supply: 2V ~ 6V Current - Output High, Low: 24mA, 24mA Number of Inputs: 2 Supplier Device Package: 14-TSSOP Input Logic Level - High: 2.1V ~ 3.85V Input Logic Level - Low: 0.9V ~ 1.65V Max Propagation Delay @ V, Max CL: 8.5ns @ 5V, 50pF Number of Circuits: 4 Current - Quiescent (Max): 4 µA |
auf Bestellung 7500 Stücke: Lieferzeit 10-14 Tag (e) |
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MC74AC86NG | onsemi |
Description: IC GATE XOR 4CH 2-INP 14DIP Packaging: Tube Package / Case: 14-DIP (0.300", 7.62mm) Mounting Type: Through Hole Logic Type: XOR (Exclusive OR) Operating Temperature: -40°C ~ 85°C Voltage - Supply: 2V ~ 6V Current - Output High, Low: 24mA, 24mA Number of Inputs: 2 Supplier Device Package: 14-PDIP Input Logic Level - High: 2.1V ~ 3.85V Input Logic Level - Low: 0.9V ~ 1.65V Max Propagation Delay @ V, Max CL: 8.5ns @ 5V, 50pF Number of Circuits: 4 Current - Quiescent (Max): 4 µA |
auf Bestellung 1075 Stücke: Lieferzeit 10-14 Tag (e) |
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NB3U1548CDTR2G | onsemi |
Description: IC CLK BUFFER 1:4 160MHZ 8TSSOP Packaging: Tape & Reel (TR) Package / Case: 8-TSSOP (0.173", 4.40mm Width) Number of Circuits: 1 Mounting Type: Surface Mount Output: LVCMOS Type: Fanout Buffer (Distribution) Input: LVCMOS Operating Temperature: -40°C ~ 85°C (TA) Voltage - Supply: 1.4V ~ 3.465V Ratio - Input:Output: 1:4 Differential - Input:Output: No/No Supplier Device Package: 8-TSSOP Frequency - Max: 160 MHz |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||||
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NB3U1548CDTR2G | onsemi |
Description: IC CLK BUFFER 1:4 160MHZ 8TSSOP Packaging: Cut Tape (CT) Package / Case: 8-TSSOP (0.173", 4.40mm Width) Number of Circuits: 1 Mounting Type: Surface Mount Output: LVCMOS Type: Fanout Buffer (Distribution) Input: LVCMOS Operating Temperature: -40°C ~ 85°C (TA) Voltage - Supply: 1.4V ~ 3.465V Ratio - Input:Output: 1:4 Differential - Input:Output: No/No Supplier Device Package: 8-TSSOP Frequency - Max: 160 MHz |
auf Bestellung 935 Stücke: Lieferzeit 10-14 Tag (e) |
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NLV74HCT14ADTR2G | onsemi |
Description: IC INVERTER 6CH 1-INP 14TSSOP Features: Schmitt Trigger Packaging: Bulk Package / Case: 14-TSSOP (0.173", 4.40mm Width) Mounting Type: Surface Mount Logic Type: Inverter Operating Temperature: -55°C ~ 125°C Voltage - Supply: 4.5V ~ 5.5V Current - Output High, Low: 4mA, 4mA Number of Inputs: 1 Supplier Device Package: 14-TSSOP Input Logic Level - High: 1.9V ~ 2.1V Input Logic Level - Low: 0.5V ~ 0.6V Max Propagation Delay @ V, Max CL: 32ns @ 5V, 50pF Grade: Automotive Number of Circuits: 6 Current - Quiescent (Max): 1 µA Qualification: AEC-Q100 |
auf Bestellung 44023 Stücke: Lieferzeit 10-14 Tag (e) |
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ESD8111FCT5G | onsemi |
Description: LOW CAP SCR IN 0201 DSN Packaging: Tape & Reel (TR) Package / Case: 2-XFBGA, WLCSP Mounting Type: Surface Mount Type: Zener Operating Temperature: -55°C ~ 150°C (TJ) Applications: USB Capacitance @ Frequency: 0.2pF @ 1MHz Current - Peak Pulse (10/1000µs): 7.1A Voltage - Reverse Standoff (Typ): 3.3V (Max) Supplier Device Package: 2-WLCSP (0.6x0.3) Bidirectional Channels: 1 Voltage - Breakdown (Min): 5.5V Voltage - Clamping (Max) @ Ipp: 8V Power Line Protection: No |
Produkt ist nicht verfügbar |
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ESD8111FCT5G | onsemi |
Description: LOW CAP SCR IN 0201 DSN Packaging: Cut Tape (CT) Package / Case: 2-XFBGA, WLCSP Mounting Type: Surface Mount Type: Zener Operating Temperature: -55°C ~ 150°C (TJ) Applications: USB Capacitance @ Frequency: 0.2pF @ 1MHz Current - Peak Pulse (10/1000µs): 7.1A Voltage - Reverse Standoff (Typ): 3.3V (Max) Supplier Device Package: 2-WLCSP (0.6x0.3) Bidirectional Channels: 1 Voltage - Breakdown (Min): 5.5V Voltage - Clamping (Max) @ Ipp: 8V Power Line Protection: No |
auf Bestellung 8880 Stücke: Lieferzeit 10-14 Tag (e) |
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| ESD8118MUTAG | onsemi |
Description: TVS DIODE 3.3VWM 11.4VC 10UDFN Packaging: Bulk Package / Case: 10-UFDFN Mounting Type: Surface Mount Type: Zener Operating Temperature: -55°C ~ 125°C (TJ) Applications: HDMI Capacitance @ Frequency: 0.3pF @ 1MHz Current - Peak Pulse (10/1000µs): 16A Voltage - Reverse Standoff (Typ): 3.3V (Max) Supplier Device Package: 10-UDFN (3.2x1.2) Unidirectional Channels: 8 Voltage - Breakdown (Min): 4V Voltage - Clamping (Max) @ Ipp: 11.4V (Typ) Power Line Protection: No |
auf Bestellung 783000 Stücke: Lieferzeit 10-14 Tag (e) |
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ESD8501V5MUT5G | onsemi |
Description: TVS DIODE 5VWM 11.5VC 2UDFN Packaging: Tape & Reel (TR) Package / Case: 2-UDFN Mounting Type: Surface Mount Type: Zener Operating Temperature: -65°C ~ 150°C (TJ) Applications: General Purpose Capacitance @ Frequency: 16pF @ 0V, 1MHz (Max) Current - Peak Pulse (10/1000µs): 70A (8/20µs) Voltage - Reverse Standoff (Typ): 5V (Max) Supplier Device Package: 2-UDFN (1.6x1) Unidirectional Channels: 1 Voltage - Breakdown (Min): 6V Voltage - Clamping (Max) @ Ipp: 11.5V Power Line Protection: No |
Produkt ist nicht verfügbar |
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ESD8501V5MUT5G | onsemi |
Description: TVS DIODE 5VWM 11.5VC 2UDFN Packaging: Bulk Package / Case: 2-UDFN Mounting Type: Surface Mount Type: Zener Operating Temperature: -65°C ~ 150°C (TJ) Applications: General Purpose Capacitance @ Frequency: 16pF @ 0V, 1MHz (Max) Current - Peak Pulse (10/1000µs): 70A (8/20µs) Voltage - Reverse Standoff (Typ): 5V (Max) Supplier Device Package: 2-UDFN (1.6x1) Unidirectional Channels: 1 Voltage - Breakdown (Min): 6V Voltage - Clamping (Max) @ Ipp: 11.5V Power Line Protection: No |
auf Bestellung 6340438 Stücke: Lieferzeit 10-14 Tag (e) |
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SZESD8104MUTAG | onsemi |
Description: TVS DIODE 3.3VWM 11.4VC 10UDFN Packaging: Bulk Package / Case: 10-UFDFN Mounting Type: Surface Mount Type: Zener Operating Temperature: -55°C ~ 125°C (TJ) Applications: HDMI, USB Capacitance @ Frequency: 0.3pF @ 1MHz Current - Peak Pulse (10/1000µs): 16A Voltage - Reverse Standoff (Typ): 3.3V (Max) Supplier Device Package: 10-UDFN (2.5x1) Unidirectional Channels: 4 Voltage - Breakdown (Min): 4V Voltage - Clamping (Max) @ Ipp: 11.4V (Typ) Power Line Protection: No Grade: Automotive Qualification: AEC-Q101 |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||||
| ESD8116MUTAG | onsemi |
Description: ESD8116 - ESD Protection Array, Packaging: Bulk Package / Case: 8-UFDFN Mounting Type: Surface Mount Type: Zener Operating Temperature: -55°C ~ 125°C (TJ) Applications: USB Capacitance @ Frequency: 0.3pF @ 1MHz Current - Peak Pulse (10/1000µs): 16A Voltage - Reverse Standoff (Typ): 3.3V (Max) Supplier Device Package: 8-UDFN (2x1.2) Unidirectional Channels: 6 Voltage - Breakdown (Min): 4V Voltage - Clamping (Max) @ Ipp: 11.4V (Typ) Power Line Protection: No |
auf Bestellung 1907549 Stücke: Lieferzeit 10-14 Tag (e) |
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SZESD8351MUT5G | onsemi |
Description: TVS DIODE 3.3VWM 11.2VC 2X3DFN Packaging: Tape & Reel (TR) Package / Case: 0201 (0603 Metric) Mounting Type: Surface Mount Type: Zener Operating Temperature: -55°C ~ 125°C (TJ) Capacitance @ Frequency: 0.25pF @ 1MHz Current - Peak Pulse (10/1000µs): 5A (8/20µs) Voltage - Reverse Standoff (Typ): 3.3V (Max) Supplier Device Package: 2-X3DFN (0.6x0.3) (0201) Unidirectional Channels: 1 Voltage - Breakdown (Min): 5.5V Voltage - Clamping (Max) @ Ipp: 11.2V Power Line Protection: No Grade: Automotive Qualification: AEC-Q101 |
auf Bestellung 40000 Stücke: Lieferzeit 10-14 Tag (e) |
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SZESD8351MUT5G | onsemi |
Description: TVS DIODE 3.3VWM 11.2VC 2X3DFN Packaging: Cut Tape (CT) Package / Case: 0201 (0603 Metric) Mounting Type: Surface Mount Type: Zener Operating Temperature: -55°C ~ 125°C (TJ) Capacitance @ Frequency: 0.25pF @ 1MHz Current - Peak Pulse (10/1000µs): 5A (8/20µs) Voltage - Reverse Standoff (Typ): 3.3V (Max) Supplier Device Package: 2-X3DFN (0.6x0.3) (0201) Unidirectional Channels: 1 Voltage - Breakdown (Min): 5.5V Voltage - Clamping (Max) @ Ipp: 11.2V Power Line Protection: No Grade: Automotive Qualification: AEC-Q101 |
auf Bestellung 40000 Stücke: Lieferzeit 10-14 Tag (e) |
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ESD8551N2T5G | onsemi |
Description: TVS DIODE 3.3VWM 16VC 2X2DFN Packaging: Tape & Reel (TR) Package / Case: 2-XDFN Mounting Type: Surface Mount Type: Zener Operating Temperature: -55°C ~ 125°C (TJ) Applications: General Purpose Capacitance @ Frequency: 0.2pF @ 1MHz Voltage - Reverse Standoff (Typ): 3.3V (Max) Supplier Device Package: 2-X2DFN (1x0.6) Bidirectional Channels: 1 Voltage - Breakdown (Min): 5.5V Voltage - Clamping (Max) @ Ipp: 16V (Typ) Power Line Protection: No |
auf Bestellung 160000 Stücke: Lieferzeit 10-14 Tag (e) |
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ESD8551N2T5G | onsemi |
Description: TVS DIODE 3.3VWM 16VC 2X2DFN Packaging: Cut Tape (CT) Package / Case: 2-XDFN Mounting Type: Surface Mount Type: Zener Operating Temperature: -55°C ~ 125°C (TJ) Applications: General Purpose Capacitance @ Frequency: 0.2pF @ 1MHz Voltage - Reverse Standoff (Typ): 3.3V (Max) Supplier Device Package: 2-X2DFN (1x0.6) Bidirectional Channels: 1 Voltage - Breakdown (Min): 5.5V Voltage - Clamping (Max) @ Ipp: 16V (Typ) Power Line Protection: No |
auf Bestellung 164230 Stücke: Lieferzeit 10-14 Tag (e) |
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SZESD8551N2T5G | onsemi |
Description: TVS DIODE 3.3VWM 16VC 2X2DFN Packaging: Tape & Reel (TR) Package / Case: 2-XDFN Mounting Type: Surface Mount Type: Zener Operating Temperature: -55°C ~ 125°C (TJ) Applications: USB 3.0 Capacitance @ Frequency: 0.3pF @ 1MHz (Max) Current - Peak Pulse (10/1000µs): 16A Voltage - Reverse Standoff (Typ): 3.3V (Max) Supplier Device Package: 2-X2DFN (1x0.6) Bidirectional Channels: 1 Voltage - Breakdown (Min): 5.5V Voltage - Clamping (Max) @ Ipp: 16V (Typ) Power Line Protection: No Grade: Automotive Qualification: AEC-Q101 |
auf Bestellung 8000 Stücke: Lieferzeit 10-14 Tag (e) |
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SZESD8551N2T5G | onsemi |
Description: TVS DIODE 3.3VWM 16VC 2X2DFN Packaging: Cut Tape (CT) Package / Case: 2-XDFN Mounting Type: Surface Mount Type: Zener Operating Temperature: -55°C ~ 125°C (TJ) Applications: USB 3.0 Capacitance @ Frequency: 0.3pF @ 1MHz (Max) Current - Peak Pulse (10/1000µs): 16A Voltage - Reverse Standoff (Typ): 3.3V (Max) Supplier Device Package: 2-X2DFN (1x0.6) Bidirectional Channels: 1 Voltage - Breakdown (Min): 5.5V Voltage - Clamping (Max) @ Ipp: 16V (Typ) Power Line Protection: No Grade: Automotive Qualification: AEC-Q101 |
auf Bestellung 8000 Stücke: Lieferzeit 10-14 Tag (e) |
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MMSZ5254BT1 | onsemi |
Description: DIODE ZENER 27V 500MW SOD-123 Tolerance: ±5% Packaging: Tape & Reel (TR) Package / Case: SOD-123 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C Voltage - Zener (Nom) (Vz): 27 V Impedance (Max) (Zzt): 41 Ohms Supplier Device Package: SOD-123 Power - Max: 500 mW Voltage - Forward (Vf) (Max) @ If: 900 mV @ 10 mA Current - Reverse Leakage @ Vr: 100 nA @ 21 V |
Produkt ist nicht verfügbar |
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CM6320 | onsemi |
Description: FILTER RC(PI) 70 OHMS ESD SMD Packaging: Bulk Package / Case: 24-UFBGA, WLCSP Size / Dimension: 0.077" L x 0.077" W (1.96mm x 1.96mm) Mounting Type: Surface Mount Type: Low Pass Operating Temperature: -40°C ~ 85°C Values: R = 70Ohms, C = 30pF Height: 0.025" (0.64mm) Filter Order: 2nd Applications: Data Lines for Mobile Devices Technology: RC (Pi) Resistance - Channel (Ohms): 70 ESD Protection: Yes Number of Channels: 10 |
auf Bestellung 5000 Stücke: Lieferzeit 10-14 Tag (e) |
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MC79L24ACPRPG | onsemi |
Description: IC REG LINEAR -24V 100MA TO92 Packaging: Cut Tape (CT) Package / Case: TO-226-3, TO-92-3 Long Body, Formed Leads Output Type: Fixed Mounting Type: Through Hole Current - Output: 100mA Operating Temperature: 0°C ~ 125°C Output Configuration: Negative Voltage - Input (Max): -40V Number of Regulators: 1 Supplier Device Package: TO-92 (TO-226) Voltage - Output (Min/Fixed): -24V PSRR: 47dB (120Hz) Voltage Dropout (Max): 1.7V @ 40mA (Typ) Protection Features: Over Temperature, Short Circuit |
auf Bestellung 11987 Stücke: Lieferzeit 10-14 Tag (e) |
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MC79L24ACPRPG | onsemi |
Description: IC REG LINEAR -24V 100MA TO92 Packaging: Tape & Box (TB) Package / Case: TO-226-3, TO-92-3 Long Body, Formed Leads Output Type: Fixed Mounting Type: Through Hole Current - Output: 100mA Operating Temperature: 0°C ~ 125°C Output Configuration: Negative Voltage - Input (Max): -40V Number of Regulators: 1 Supplier Device Package: TO-92 (TO-226) Voltage - Output (Min/Fixed): -24V PSRR: 47dB (120Hz) Voltage Dropout (Max): 1.7V @ 40mA (Typ) Protection Features: Over Temperature, Short Circuit |
auf Bestellung 10000 Stücke: Lieferzeit 10-14 Tag (e) |
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FSL518HPG | onsemi |
Description: IC OFFLINE SWITCH FLYBACK 7DIP Packaging: Tube Package / Case: 8-DIP (0.300", 7.62mm), 7 Leads Mounting Type: Through Hole Operating Temperature: -40°C ~ 125°C (TJ) Frequency - Switching: 130kHz Internal Switch(s): Yes Voltage - Breakdown: 800V Output Isolation: Either Topology: Flyback Supplier Device Package: 7-PDIP Fault Protection: Current Limiting, Over Load, Over Power, Over Temperature, Over Voltage Voltage - Start Up: 16 V Control Features: EN, Soft Start Power (Watts): 15 W |
auf Bestellung 2958 Stücke: Lieferzeit 10-14 Tag (e) |
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MC79L18ACPG | onsemi |
Description: FIXED NEGATIVE STANDARD REGULATO Packaging: Bulk Package / Case: TO-226-3, TO-92-3 Long Body Output Type: Fixed Mounting Type: Through Hole Current - Output: 100mA Operating Temperature: 0°C ~ 125°C Output Configuration: Negative Voltage - Input (Max): -35V Number of Regulators: 1 Supplier Device Package: TO-92 (TO-226) Voltage - Output (Min/Fixed): -18V PSRR: 48dB (120Hz) Voltage Dropout (Max): 1.7V @ 40mA (Typ) Protection Features: Over Temperature, Short Circuit |
auf Bestellung 43130 Stücke: Lieferzeit 10-14 Tag (e) |
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NVMJD010N10MCLTWG | onsemi |
Description: PTNG 100V N-CH LL IN LFPAK56 DUA Packaging: Tape & Reel (TR) Package / Case: SOT-1205, 8-LFPAK56 Mounting Type: Surface Mount Configuration: 2 N-Channel Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 3.1W (Ta), 84W (Tc) Drain to Source Voltage (Vdss): 100V Current - Continuous Drain (Id) @ 25°C: 11.8A (Ta), 62A (Tc) Input Capacitance (Ciss) (Max) @ Vds: 1795pF @ 50V Rds On (Max) @ Id, Vgs: 10mOhm @ 17A, 10V Gate Charge (Qg) (Max) @ Vgs: 26.4nC @ 10V Vgs(th) (Max) @ Id: 3V @ 97µA Supplier Device Package: 8-LFPAK Grade: Automotive Qualification: AEC-Q101 |
Produkt ist nicht verfügbar |
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NVMJD010N10MCLTWG | onsemi |
Description: PTNG 100V N-CH LL IN LFPAK56 DUA Packaging: Cut Tape (CT) Package / Case: SOT-1205, 8-LFPAK56 Mounting Type: Surface Mount Configuration: 2 N-Channel Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 3.1W (Ta), 84W (Tc) Drain to Source Voltage (Vdss): 100V Current - Continuous Drain (Id) @ 25°C: 11.8A (Ta), 62A (Tc) Input Capacitance (Ciss) (Max) @ Vds: 1795pF @ 50V Rds On (Max) @ Id, Vgs: 10mOhm @ 17A, 10V Gate Charge (Qg) (Max) @ Vgs: 26.4nC @ 10V Vgs(th) (Max) @ Id: 3V @ 97µA Supplier Device Package: 8-LFPAK Grade: Automotive Qualification: AEC-Q101 |
Produkt ist nicht verfügbar |
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FDB9503L-F085 | onsemi |
Description: MOSFET P-CH 40V 110A D2PAK Packaging: Tape & Reel (TR) Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 110A (Tc) Rds On (Max) @ Id, Vgs: 2.6mOhm @ 80A, 10V Power Dissipation (Max): 333W (Tj) Vgs(th) (Max) @ Id: 3V @ 250µA Supplier Device Package: TO-263 (D2Pak) Grade: Automotive Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±16V Drain to Source Voltage (Vdss): 40 V Gate Charge (Qg) (Max) @ Vgs: 255 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 8320 pF @ 20 V Qualification: AEC-Q101 |
Produkt ist nicht verfügbar |
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FDB9503L-F085 | onsemi |
Description: MOSFET P-CH 40V 110A D2PAK Packaging: Cut Tape (CT) Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 110A (Tc) Rds On (Max) @ Id, Vgs: 2.6mOhm @ 80A, 10V Power Dissipation (Max): 333W (Tj) Vgs(th) (Max) @ Id: 3V @ 250µA Supplier Device Package: TO-263 (D2Pak) Grade: Automotive Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±16V Drain to Source Voltage (Vdss): 40 V Gate Charge (Qg) (Max) @ Vgs: 255 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 8320 pF @ 20 V Qualification: AEC-Q101 |
auf Bestellung 654 Stücke: Lieferzeit 10-14 Tag (e) |
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FDB9409-F085 | onsemi |
Description: MOSFET N-CH 40V 80A D2PAK Packaging: Tape & Reel (TR) Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 80A (Tc) Rds On (Max) @ Id, Vgs: 3.5mOhm @ 80A, 10V Power Dissipation (Max): 94W (Tj) Vgs(th) (Max) @ Id: 4V @ 250µA Supplier Device Package: TO-263 (D2Pak) Grade: Automotive Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 40 V Gate Charge (Qg) (Max) @ Vgs: 56 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 2980 pF @ 25 V Qualification: AEC-Q101 |
Produkt ist nicht verfügbar |
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FDB9409-F085 | onsemi |
Description: MOSFET N-CH 40V 80A D2PAK Packaging: Cut Tape (CT) Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 80A (Tc) Rds On (Max) @ Id, Vgs: 3.5mOhm @ 80A, 10V Power Dissipation (Max): 94W (Tj) Vgs(th) (Max) @ Id: 4V @ 250µA Supplier Device Package: TO-263 (D2Pak) Grade: Automotive Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 40 V Gate Charge (Qg) (Max) @ Vgs: 56 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 2980 pF @ 25 V Qualification: AEC-Q101 |
Produkt ist nicht verfügbar |
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LM393N | onsemi |
Description: IC COMPARATOR 2 DIFF 8DIP Packaging: Tube Package / Case: 8-DIP (0.300", 7.62mm) Mounting Type: Through Hole Number of Elements: 2 Type: Standard (General Purpose) Operating Temperature: 0°C ~ 70°C Voltage - Supply, Single/Dual (±): 2V ~ 36V, ±1V ~ 18V Supplier Device Package: 8-DIP Current - Quiescent (Max): 2.5mA Voltage - Input Offset (Max): 5mV @ 5V Current - Input Bias (Max): 0.25µA @ 5V Current - Output (Typ): 18mA @ 5V |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||||
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MPSA93 | onsemi |
Description: TRANS PNP 200V 0.5A TO92 Packaging: Bulk Package / Case: TO-226-3, TO-92-3 Long Body Mounting Type: Through Hole Transistor Type: PNP Operating Temperature: -55°C ~ 150°C (TJ) Vce Saturation (Max) @ Ib, Ic: 400mV @ 2mA, 20mA Current - Collector Cutoff (Max): 250nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 25 @ 30mA, 10V Frequency - Transition: 50MHz Supplier Device Package: TO-92 (TO-226) Current - Collector (Ic) (Max): 500 mA Voltage - Collector Emitter Breakdown (Max): 200 V Power - Max: 625 mW |
auf Bestellung 77302 Stücke: Lieferzeit 10-14 Tag (e) |
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MPSA93 | onsemi |
Description: TRANS PNP 200V 0.5A TO92 Packaging: Bulk Package / Case: TO-226-3, TO-92-3 Long Body Mounting Type: Through Hole Transistor Type: PNP Operating Temperature: -55°C ~ 150°C (TJ) Vce Saturation (Max) @ Ib, Ic: 400mV @ 2mA, 20mA Current - Collector Cutoff (Max): 250nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 25 @ 30mA, 10V Frequency - Transition: 50MHz Supplier Device Package: TO-92 (TO-226) Current - Collector (Ic) (Max): 500 mA Voltage - Collector Emitter Breakdown (Max): 200 V Power - Max: 625 mW |
Produkt ist nicht verfügbar |
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NP1100SBT3G | onsemi |
Description: THYRISTOR 90V 80A DO214AA Packaging: Bulk Capacitance: 95pF Package / Case: DO-214AA, SMB Mounting Type: Surface Mount Number of Elements: 1 Voltage - Breakover: 130V Voltage - Off State: 90V Voltage - On State: 4 V Supplier Device Package: SMB Current - Hold (Ih): 150 mA Current - Peak Pulse (10/1000µs): 80 A |
auf Bestellung 7000 Stücke: Lieferzeit 10-14 Tag (e) |
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BTA08-800CW3LFG | onsemi |
Description: TRIAC 600V 8A TO220AB Packaging: Bulk Package / Case: TO-220-3 Mounting Type: Through Hole Triac Type: Standard Configuration: Single Operating Temperature: -40°C ~ 125°C (TJ) Current - Hold (Ih) (Max): 35 mA Current - Gate Trigger (Igt) (Max): 35 mA Current - Non Rep. Surge 50, 60Hz (Itsm): 90A @ 60Hz Voltage - Gate Trigger (Vgt) (Max): 1.1 V Supplier Device Package: TO-220AB Current - On State (It (RMS)) (Max): 8 A Voltage - Off State: 600 V |
auf Bestellung 12119 Stücke: Lieferzeit 10-14 Tag (e) |
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| 2SJ615-TD-E | onsemi |
Description: PCH 4V DRIVE SERIES Packaging: Bulk |
auf Bestellung 73000 Stücke: Lieferzeit 10-14 Tag (e) |
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EFC4K105NUZTDG | onsemi |
Description: MOSFET 2N-CH 22V 25A 10WLCSP Packaging: Tape & Reel (TR) Package / Case: 10-SMD, No Lead Mounting Type: Surface Mount Configuration: 2 N-Channel (Dual) Common Drain Operating Temperature: 150°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 2.5W (Ta) Drain to Source Voltage (Vdss): 22V Current - Continuous Drain (Id) @ 25°C: 25A (Ta) Rds On (Max) @ Id, Vgs: 3.55mOhm @ 5A, 4.5V Gate Charge (Qg) (Max) @ Vgs: 43nC @ 3.8V FET Feature: Logic Level Gate, 2.5V Drive Vgs(th) (Max) @ Id: 1.3V @ 1mA Supplier Device Package: 10-WLCSP (3.4x1.96) |
Produkt ist nicht verfügbar |
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EFC4K105NUZTDG | onsemi |
Description: MOSFET 2N-CH 22V 25A 10WLCSP Packaging: Cut Tape (CT) Package / Case: 10-SMD, No Lead Mounting Type: Surface Mount Configuration: 2 N-Channel (Dual) Common Drain Operating Temperature: 150°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 2.5W (Ta) Drain to Source Voltage (Vdss): 22V Current - Continuous Drain (Id) @ 25°C: 25A (Ta) Rds On (Max) @ Id, Vgs: 3.55mOhm @ 5A, 4.5V Gate Charge (Qg) (Max) @ Vgs: 43nC @ 3.8V FET Feature: Logic Level Gate, 2.5V Drive Vgs(th) (Max) @ Id: 1.3V @ 1mA Supplier Device Package: 10-WLCSP (3.4x1.96) |
auf Bestellung 4950 Stücke: Lieferzeit 10-14 Tag (e) |
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EFC2K102NUZTDG | onsemi |
Description: MOSFET 2N-CH 12V 33A 10WLCSP Packaging: Tape & Reel (TR) Package / Case: 10-SMD, No Lead Mounting Type: Surface Mount Configuration: 2 N-Channel (Dual) Common Drain Operating Temperature: 150°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 3.1W (Ta) Drain to Source Voltage (Vdss): 12V Current - Continuous Drain (Id) @ 25°C: 33A (Ta) Rds On (Max) @ Id, Vgs: 2.65mOhm @ 5A, 4.5V Gate Charge (Qg) (Max) @ Vgs: 42nC @ 3.8V FET Feature: Logic Level Gate, 2.5V Drive Vgs(th) (Max) @ Id: 1.3V @ 1mA Supplier Device Package: 10-WLCSP (2.98x1.49) |
Produkt ist nicht verfügbar |
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EFC2K102NUZTDG | onsemi |
Description: MOSFET 2N-CH 12V 33A 10WLCSP Packaging: Cut Tape (CT) Package / Case: 10-SMD, No Lead Mounting Type: Surface Mount Configuration: 2 N-Channel (Dual) Common Drain Operating Temperature: 150°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 3.1W (Ta) Drain to Source Voltage (Vdss): 12V Current - Continuous Drain (Id) @ 25°C: 33A (Ta) Rds On (Max) @ Id, Vgs: 2.65mOhm @ 5A, 4.5V Gate Charge (Qg) (Max) @ Vgs: 42nC @ 3.8V FET Feature: Logic Level Gate, 2.5V Drive Vgs(th) (Max) @ Id: 1.3V @ 1mA Supplier Device Package: 10-WLCSP (2.98x1.49) |
auf Bestellung 4895 Stücke: Lieferzeit 10-14 Tag (e) |
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NLSX3013BFCT1G | onsemi |
Description: IC TRANSLATOR BIDIR 20FLIPCHIP Features: Auto-Direction Sensing Packaging: Bulk Package / Case: 20-WFBGA, FCBGA Output Type: Tri-State, Non-Inverted Mounting Type: Surface Mount Operating Temperature: -40°C ~ 85°C (TA) Data Rate: 100Mbps Supplier Device Package: 20-FlipChip (2.54x2.03) Channel Type: Bidirectional Translator Type: Voltage Level Channels per Circuit: 8 Voltage - VCCA: 0.9 V ~ 4.5 V Voltage - VCCB: 1.3 V ~ 4.5 V Number of Circuits: 1 |
auf Bestellung 116964 Stücke: Lieferzeit 10-14 Tag (e) |
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NLSX3013FCT1G | onsemi |
Description: IC TRANSLATOR BIDIR 20FLIPCHIP Features: Auto-Direction Sensing Packaging: Bulk Package / Case: 20-WFBGA, FCBGA Output Type: Tri-State, Non-Inverted Mounting Type: Surface Mount Operating Temperature: -40°C ~ 85°C (TA) Data Rate: 100Mbps Supplier Device Package: 20-FlipChip (2.54x2.03) Channel Type: Bidirectional Translator Type: Voltage Level Channels per Circuit: 8 Voltage - VCCA: 0.9 V ~ 4.5 V Voltage - VCCB: 1.3 V ~ 4.5 V Number of Circuits: 1 |
auf Bestellung 63275 Stücke: Lieferzeit 10-14 Tag (e) |
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NTBG030N120M3S | onsemi |
Description: SILICON CARBIDE (SIC) MOSFET - E Packaging: Tape & Reel (TR) Package / Case: TO-263-8, D2PAK (7 Leads + Tab), TO-263CA Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: SiCFET (Silicon Carbide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 77A (Tc) Rds On (Max) @ Id, Vgs: 39mOhm @ 30A, 18V Power Dissipation (Max): 348W (Tc) Vgs(th) (Max) @ Id: 4.4V @ 15mA Supplier Device Package: D2PAK-7 Drive Voltage (Max Rds On, Min Rds On): 18V Vgs (Max): +22V, -10V Drain to Source Voltage (Vdss): 1200 V Gate Charge (Qg) (Max) @ Vgs: 107 nC @ 18 V Input Capacitance (Ciss) (Max) @ Vds: 2430 pF @ 800 V |
auf Bestellung 25600 Stücke: Lieferzeit 10-14 Tag (e) |
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NTBG030N120M3S | onsemi |
Description: SILICON CARBIDE (SIC) MOSFET - E Packaging: Cut Tape (CT) Package / Case: TO-263-8, D2PAK (7 Leads + Tab), TO-263CA Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: SiCFET (Silicon Carbide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 77A (Tc) Rds On (Max) @ Id, Vgs: 39mOhm @ 30A, 18V Power Dissipation (Max): 348W (Tc) Vgs(th) (Max) @ Id: 4.4V @ 15mA Supplier Device Package: D2PAK-7 Drive Voltage (Max Rds On, Min Rds On): 18V Vgs (Max): +22V, -10V Drain to Source Voltage (Vdss): 1200 V Gate Charge (Qg) (Max) @ Vgs: 107 nC @ 18 V Input Capacitance (Ciss) (Max) @ Vds: 2430 pF @ 800 V |
auf Bestellung 26084 Stücke: Lieferzeit 10-14 Tag (e) |
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NTH4L030N120M3S | onsemi |
Description: SILICON CARBIDE (SIC) MOSFET EL Packaging: Tube Package / Case: TO-247-4 Mounting Type: Through Hole Operating Temperature: -55°C ~ 175°C (TJ) Technology: SiCFET (Silicon Carbide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 73A (Tc) Rds On (Max) @ Id, Vgs: 39mOhm @ 30A, 18V Power Dissipation (Max): 313W (Tc) Vgs(th) (Max) @ Id: 4.4V @ 15mA Supplier Device Package: TO-247-4L Drive Voltage (Max Rds On, Min Rds On): 18V Vgs (Max): +22V, -10V Drain to Source Voltage (Vdss): 1200 V Gate Charge (Qg) (Max) @ Vgs: 107 nC @ 18 V Input Capacitance (Ciss) (Max) @ Vds: 2430 pF @ 800 V |
auf Bestellung 84 Stücke: Lieferzeit 10-14 Tag (e) |
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NTHL030N120M3S | onsemi |
Description: SILICON CARBIDE (SIC) MOSFET EL Packaging: Tube Package / Case: TO-247-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 175°C (TJ) Technology: SiCFET (Silicon Carbide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 73A (Tc) Rds On (Max) @ Id, Vgs: 39mOhm @ 30A, 18V Power Dissipation (Max): 313W (Tc) Vgs(th) (Max) @ Id: 4.4V @ 15mA Supplier Device Package: TO-247-3 Drive Voltage (Max Rds On, Min Rds On): 18V Vgs (Max): +22V, -10V Drain to Source Voltage (Vdss): 1200 V Gate Charge (Qg) (Max) @ Vgs: 107 nC @ 18 V Input Capacitance (Ciss) (Max) @ Vds: 2430 pF @ 800 V |
auf Bestellung 426 Stücke: Lieferzeit 10-14 Tag (e) |
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NVBG030N120M3S | onsemi |
Description: SILICON CARBIDE (SIC) MOSFET - E Packaging: Tape & Reel (TR) Package / Case: TO-263-8, D2PAK (7 Leads + Tab), TO-263CA Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: SiCFET (Silicon Carbide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 77A (Tc) Rds On (Max) @ Id, Vgs: 39mOhm @ 30A, 18V Power Dissipation (Max): 348W (Tc) Vgs(th) (Max) @ Id: 4.4V @ 15mA Supplier Device Package: D2PAK-7 Grade: Automotive Drive Voltage (Max Rds On, Min Rds On): 18V Vgs (Max): +22V, -10V Drain to Source Voltage (Vdss): 1200 V Gate Charge (Qg) (Max) @ Vgs: 107 nC @ 18 V Input Capacitance (Ciss) (Max) @ Vds: 2430 pF @ 800 V Qualification: AEC-Q101 |
auf Bestellung 12800 Stücke: Lieferzeit 10-14 Tag (e) |
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| FFSP2065A |
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Hersteller: onsemi
Description: DIODE SIL CARB 650V 25A TO220-2
Packaging: Tube
Package / Case: TO-220-2
Mounting Type: Through Hole
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0 ns
Technology: SiC (Silicon Carbide) Schottky
Capacitance @ Vr, F: 1085pF @ 1V, 100kHz
Current - Average Rectified (Io): 25A
Supplier Device Package: TO-220-2
Operating Temperature - Junction: -55°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 650 V
Voltage - Forward (Vf) (Max) @ If: 1.75 V @ 20 A
Current - Reverse Leakage @ Vr: 200 µA @ 650 V
Description: DIODE SIL CARB 650V 25A TO220-2
Packaging: Tube
Package / Case: TO-220-2
Mounting Type: Through Hole
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0 ns
Technology: SiC (Silicon Carbide) Schottky
Capacitance @ Vr, F: 1085pF @ 1V, 100kHz
Current - Average Rectified (Io): 25A
Supplier Device Package: TO-220-2
Operating Temperature - Junction: -55°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 650 V
Voltage - Forward (Vf) (Max) @ If: 1.75 V @ 20 A
Current - Reverse Leakage @ Vr: 200 µA @ 650 V
auf Bestellung 54299 Stücke:
Lieferzeit 10-14 Tag (e)| Anzahl | Preis |
|---|---|
| 2+ | 10.52 EUR |
| 50+ | 5.63 EUR |
| 100+ | 5.16 EUR |
| 500+ | 4.33 EUR |
| 1000+ | 4.3 EUR |
| FFSP2065B |
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Hersteller: onsemi
Description: DIODE SIL CARB 650V 22.5A TO220
Packaging: Tube
Package / Case: TO-220-2
Mounting Type: Through Hole
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0 ns
Technology: SiC (Silicon Carbide) Schottky
Capacitance @ Vr, F: 866pF @ 1V, 100kHz
Current - Average Rectified (Io): 22.5A
Supplier Device Package: TO-220-2
Operating Temperature - Junction: -55°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 650 V
Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 20 A
Current - Reverse Leakage @ Vr: 40 µA @ 650 V
Description: DIODE SIL CARB 650V 22.5A TO220
Packaging: Tube
Package / Case: TO-220-2
Mounting Type: Through Hole
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0 ns
Technology: SiC (Silicon Carbide) Schottky
Capacitance @ Vr, F: 866pF @ 1V, 100kHz
Current - Average Rectified (Io): 22.5A
Supplier Device Package: TO-220-2
Operating Temperature - Junction: -55°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 650 V
Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 20 A
Current - Reverse Leakage @ Vr: 40 µA @ 650 V
auf Bestellung 1982 Stücke:
Lieferzeit 10-14 Tag (e)| Anzahl | Preis |
|---|---|
| 3+ | 7.41 EUR |
| 10+ | 4.92 EUR |
| 100+ | 3.5 EUR |
| 800+ | 2.76 EUR |
| 1600+ | 2.69 EUR |
| FFSP2065B-F085 |
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Hersteller: onsemi
Description: DIODE SIL CARB 650V 20A TO220-2
Packaging: Tube
Package / Case: TO-220-2
Mounting Type: Through Hole
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0 ns
Technology: SiC (Silicon Carbide) Schottky
Capacitance @ Vr, F: 866pF @ 1V, 100kHz
Current - Average Rectified (Io): 20A
Supplier Device Package: TO-220-2
Operating Temperature - Junction: -55°C ~ 175°C
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 650 V
Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 20 A
Current - Reverse Leakage @ Vr: 40 µA @ 650 V
Qualification: AEC-Q101
Description: DIODE SIL CARB 650V 20A TO220-2
Packaging: Tube
Package / Case: TO-220-2
Mounting Type: Through Hole
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0 ns
Technology: SiC (Silicon Carbide) Schottky
Capacitance @ Vr, F: 866pF @ 1V, 100kHz
Current - Average Rectified (Io): 20A
Supplier Device Package: TO-220-2
Operating Temperature - Junction: -55°C ~ 175°C
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 650 V
Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 20 A
Current - Reverse Leakage @ Vr: 40 µA @ 650 V
Qualification: AEC-Q101
auf Bestellung 580 Stücke:
Lieferzeit 10-14 Tag (e)| Anzahl | Preis |
|---|---|
| 2+ | 11.86 EUR |
| 10+ | 8.05 EUR |
| 100+ | 5.89 EUR |
| NL3S325FCT2G |
|
Hersteller: onsemi
Description: IC AUDIO PROCESSOR 9WLCSP
Packaging: Tape & Reel (TR)
Package / Case: 9-UFBGA, WLCSP
Mounting Type: Surface Mount
Function: Audio Processor
Interface: Analog
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 1.6V ~ 3.6V
Applications: Audio Systems
Supplier Device Package: 9-WLCSP (1.9x1.9)
Number of Channels: 2
Description: IC AUDIO PROCESSOR 9WLCSP
Packaging: Tape & Reel (TR)
Package / Case: 9-UFBGA, WLCSP
Mounting Type: Surface Mount
Function: Audio Processor
Interface: Analog
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 1.6V ~ 3.6V
Applications: Audio Systems
Supplier Device Package: 9-WLCSP (1.9x1.9)
Number of Channels: 2
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| NL3S325FCT2G |
|
Hersteller: onsemi
Description: IC AUDIO PROCESSOR 9WLCSP
Packaging: Bulk
Package / Case: 9-UFBGA, WLCSP
Mounting Type: Surface Mount
Function: Audio Processor
Interface: Analog
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 1.6V ~ 3.6V
Applications: Audio Systems
Supplier Device Package: 9-WLCSP (1.9x1.9)
Number of Channels: 2
Description: IC AUDIO PROCESSOR 9WLCSP
Packaging: Bulk
Package / Case: 9-UFBGA, WLCSP
Mounting Type: Surface Mount
Function: Audio Processor
Interface: Analog
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 1.6V ~ 3.6V
Applications: Audio Systems
Supplier Device Package: 9-WLCSP (1.9x1.9)
Number of Channels: 2
auf Bestellung 828000 Stücke:
Lieferzeit 10-14 Tag (e)| Anzahl | Preis |
|---|---|
| 1025+ | 0.47 EUR |
| MC74HCT241ADWR2G |
|
Hersteller: onsemi
Description: IC BUFF NON-INVERT 5.5V 20-SOIC
Packaging: Tape & Reel (TR)
Package / Case: 20-SOIC (0.295", 7.50mm Width)
Output Type: 3-State
Mounting Type: Surface Mount
Number of Elements: 2
Logic Type: Buffer, Non-Inverting
Operating Temperature: -55°C ~ 125°C (TA)
Voltage - Supply: 4.5V ~ 5.5V
Number of Bits per Element: 4
Current - Output High, Low: 6mA, 6mA
Supplier Device Package: 20-SOIC
Description: IC BUFF NON-INVERT 5.5V 20-SOIC
Packaging: Tape & Reel (TR)
Package / Case: 20-SOIC (0.295", 7.50mm Width)
Output Type: 3-State
Mounting Type: Surface Mount
Number of Elements: 2
Logic Type: Buffer, Non-Inverting
Operating Temperature: -55°C ~ 125°C (TA)
Voltage - Supply: 4.5V ~ 5.5V
Number of Bits per Element: 4
Current - Output High, Low: 6mA, 6mA
Supplier Device Package: 20-SOIC
auf Bestellung 29000 Stücke:
Lieferzeit 10-14 Tag (e)| Anzahl | Preis |
|---|---|
| 1000+ | 0.59 EUR |
| 2000+ | 0.57 EUR |
| 3000+ | 0.56 EUR |
| 5000+ | 0.55 EUR |
| 10000+ | 0.54 EUR |
| 25000+ | 0.53 EUR |
| MC74HCT241ADWR2G |
|
Hersteller: onsemi
Description: IC BUFF NON-INVERT 5.5V 20-SOIC
Packaging: Cut Tape (CT)
Package / Case: 20-SOIC (0.295", 7.50mm Width)
Output Type: 3-State
Mounting Type: Surface Mount
Number of Elements: 2
Logic Type: Buffer, Non-Inverting
Operating Temperature: -55°C ~ 125°C (TA)
Voltage - Supply: 4.5V ~ 5.5V
Number of Bits per Element: 4
Current - Output High, Low: 6mA, 6mA
Supplier Device Package: 20-SOIC
Description: IC BUFF NON-INVERT 5.5V 20-SOIC
Packaging: Cut Tape (CT)
Package / Case: 20-SOIC (0.295", 7.50mm Width)
Output Type: 3-State
Mounting Type: Surface Mount
Number of Elements: 2
Logic Type: Buffer, Non-Inverting
Operating Temperature: -55°C ~ 125°C (TA)
Voltage - Supply: 4.5V ~ 5.5V
Number of Bits per Element: 4
Current - Output High, Low: 6mA, 6mA
Supplier Device Package: 20-SOIC
auf Bestellung 29000 Stücke:
Lieferzeit 10-14 Tag (e)| Anzahl | Preis |
|---|---|
| 15+ | 1.21 EUR |
| 21+ | 0.87 EUR |
| 25+ | 0.78 EUR |
| 100+ | 0.69 EUR |
| 250+ | 0.64 EUR |
| 500+ | 0.61 EUR |
| FQA19N60 |
|
Hersteller: onsemi
Description: MOSFET N-CH 600V 18.5A TO3PN
Packaging: Tube
Package / Case: TO-3P-3, SC-65-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 18.5A (Tc)
Rds On (Max) @ Id, Vgs: 380mOhm @ 9.3A, 10V
Power Dissipation (Max): 300W (Tc)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: TO-3PN
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 90 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3600 pF @ 25 V
Description: MOSFET N-CH 600V 18.5A TO3PN
Packaging: Tube
Package / Case: TO-3P-3, SC-65-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 18.5A (Tc)
Rds On (Max) @ Id, Vgs: 380mOhm @ 9.3A, 10V
Power Dissipation (Max): 300W (Tc)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: TO-3PN
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 90 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3600 pF @ 25 V
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| LV88562JA-AH |
|
Hersteller: onsemi
Description: NON-AUTO BLDC MOTOR DRIVE
Packaging: Tape & Reel (TR)
Package / Case: 20-LFSOP (0.173", 4.40mm Width)
Mounting Type: Surface Mount
Function: Controller - Commutation, Direction Management
Current - Output: 50mA
Interface: PWM
Operating Temperature: -40°C ~ 105°C (TA)
Output Configuration: Pre-Driver - Half Bridge
Voltage - Supply: 3.9V ~ 16V
Applications: General Purpose
Supplier Device Package: 20-SSOPJ
Motor Type - AC, DC: Brushless DC (BLDC)
Description: NON-AUTO BLDC MOTOR DRIVE
Packaging: Tape & Reel (TR)
Package / Case: 20-LFSOP (0.173", 4.40mm Width)
Mounting Type: Surface Mount
Function: Controller - Commutation, Direction Management
Current - Output: 50mA
Interface: PWM
Operating Temperature: -40°C ~ 105°C (TA)
Output Configuration: Pre-Driver - Half Bridge
Voltage - Supply: 3.9V ~ 16V
Applications: General Purpose
Supplier Device Package: 20-SSOPJ
Motor Type - AC, DC: Brushless DC (BLDC)
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| LV88564RTXG |
|
Hersteller: onsemi
Description: NON-AUTO BLDC MOTOR DRIVE
Packaging: Bulk
Package / Case: 20-VFQFN
Mounting Type: Surface Mount
Function: Controller - Commutation, Direction Management
Current - Output: 50mA
Interface: PWM
Operating Temperature: -40°C ~ 105°C (TA)
Output Configuration: Pre-Driver - Half Bridge
Voltage - Supply: 3.9V ~ 16V
Applications: General Purpose
Supplier Device Package: 20-VCT (3x3)
Motor Type - AC, DC: Brushless DC (BLDC)
Description: NON-AUTO BLDC MOTOR DRIVE
Packaging: Bulk
Package / Case: 20-VFQFN
Mounting Type: Surface Mount
Function: Controller - Commutation, Direction Management
Current - Output: 50mA
Interface: PWM
Operating Temperature: -40°C ~ 105°C (TA)
Output Configuration: Pre-Driver - Half Bridge
Voltage - Supply: 3.9V ~ 16V
Applications: General Purpose
Supplier Device Package: 20-VCT (3x3)
Motor Type - AC, DC: Brushless DC (BLDC)
auf Bestellung 10000 Stücke:
Lieferzeit 10-14 Tag (e)| Anzahl | Preis |
|---|---|
| 263+ | 1.91 EUR |
| MICROFJ-30035-TSV-TR |
|
Hersteller: onsemi
Description: SENSOR PHOTODIODE 420NM 8WBGA
Packaging: Tape & Reel (TR)
Package / Case: 8-WBGA
Wavelength: 420nm
Mounting Type: Surface Mount
Diode Type: Avalanche
Operating Temperature: -40°C ~ 85°C
Response Time: 110ps
Spectral Range: 200nm ~ 900nm
Active Area: 9.43mm²
Current - Dark (Typ): 1.9µA
Voltage - DC Reverse (Vr) (Max): 24.7 V
Description: SENSOR PHOTODIODE 420NM 8WBGA
Packaging: Tape & Reel (TR)
Package / Case: 8-WBGA
Wavelength: 420nm
Mounting Type: Surface Mount
Diode Type: Avalanche
Operating Temperature: -40°C ~ 85°C
Response Time: 110ps
Spectral Range: 200nm ~ 900nm
Active Area: 9.43mm²
Current - Dark (Typ): 1.9µA
Voltage - DC Reverse (Vr) (Max): 24.7 V
auf Bestellung 3000 Stücke:
Lieferzeit 10-14 Tag (e)| Anzahl | Preis |
|---|---|
| 3000+ | 22.03 EUR |
| MICROFJ-30035-TSV-TR |
|
Hersteller: onsemi
Description: SENSOR PHOTODIODE 420NM 8WBGA
Packaging: Cut Tape (CT)
Package / Case: 8-WBGA
Wavelength: 420nm
Mounting Type: Surface Mount
Diode Type: Avalanche
Operating Temperature: -40°C ~ 85°C
Response Time: 110ps
Spectral Range: 200nm ~ 900nm
Active Area: 9.43mm²
Current - Dark (Typ): 1.9µA
Voltage - DC Reverse (Vr) (Max): 24.7 V
Description: SENSOR PHOTODIODE 420NM 8WBGA
Packaging: Cut Tape (CT)
Package / Case: 8-WBGA
Wavelength: 420nm
Mounting Type: Surface Mount
Diode Type: Avalanche
Operating Temperature: -40°C ~ 85°C
Response Time: 110ps
Spectral Range: 200nm ~ 900nm
Active Area: 9.43mm²
Current - Dark (Typ): 1.9µA
Voltage - DC Reverse (Vr) (Max): 24.7 V
auf Bestellung 3075 Stücke:
Lieferzeit 10-14 Tag (e)| Anzahl | Preis |
|---|---|
| 1+ | 31.56 EUR |
| 5+ | 28.81 EUR |
| 10+ | 27.79 EUR |
| 25+ | 26.57 EUR |
| 50+ | 26.3 EUR |
| MICROFC-30035-SMT-TR1 |
|
Hersteller: onsemi
Description: SENSOR PHOTODIODE 420NM 4SMD
Packaging: Strip
Package / Case: 4-SMD, No Lead
Wavelength: 420nm
Mounting Type: Surface Mount
Diode Type: Avalanche
Operating Temperature: -40°C ~ 85°C
Response Time: 600ps
Spectral Range: 300nm ~ 950nm
Color - Enhanced: Blue
Active Area: 9mm²
Current - Dark (Typ): 154nA
Voltage - DC Reverse (Vr) (Max): 24.7 V
Description: SENSOR PHOTODIODE 420NM 4SMD
Packaging: Strip
Package / Case: 4-SMD, No Lead
Wavelength: 420nm
Mounting Type: Surface Mount
Diode Type: Avalanche
Operating Temperature: -40°C ~ 85°C
Response Time: 600ps
Spectral Range: 300nm ~ 950nm
Color - Enhanced: Blue
Active Area: 9mm²
Current - Dark (Typ): 154nA
Voltage - DC Reverse (Vr) (Max): 24.7 V
auf Bestellung 29 Stücke:
Lieferzeit 10-14 Tag (e)| Anzahl | Preis |
|---|---|
| 1+ | 79.22 EUR |
| 5+ | 72.99 EUR |
| 10+ | 70.67 EUR |
| 25+ | 67.9 EUR |
| MC74AC86DTR2 |
|
Hersteller: onsemi
Description: IC GATE XOR 4CH 2-INP 14TSSOP
Packaging: Bulk
Package / Case: 14-TSSOP (0.173", 4.40mm Width)
Mounting Type: Surface Mount
Logic Type: XOR (Exclusive OR)
Operating Temperature: -40°C ~ 85°C
Voltage - Supply: 2V ~ 6V
Current - Output High, Low: 24mA, 24mA
Number of Inputs: 2
Supplier Device Package: 14-TSSOP
Input Logic Level - High: 2.1V ~ 3.85V
Input Logic Level - Low: 0.9V ~ 1.65V
Max Propagation Delay @ V, Max CL: 8.5ns @ 5V, 50pF
Number of Circuits: 4
Current - Quiescent (Max): 4 µA
Description: IC GATE XOR 4CH 2-INP 14TSSOP
Packaging: Bulk
Package / Case: 14-TSSOP (0.173", 4.40mm Width)
Mounting Type: Surface Mount
Logic Type: XOR (Exclusive OR)
Operating Temperature: -40°C ~ 85°C
Voltage - Supply: 2V ~ 6V
Current - Output High, Low: 24mA, 24mA
Number of Inputs: 2
Supplier Device Package: 14-TSSOP
Input Logic Level - High: 2.1V ~ 3.85V
Input Logic Level - Low: 0.9V ~ 1.65V
Max Propagation Delay @ V, Max CL: 8.5ns @ 5V, 50pF
Number of Circuits: 4
Current - Quiescent (Max): 4 µA
auf Bestellung 7500 Stücke:
Lieferzeit 10-14 Tag (e)| Anzahl | Preis |
|---|---|
| 2427+ | 0.18 EUR |
| MC74AC86NG |
|
Hersteller: onsemi
Description: IC GATE XOR 4CH 2-INP 14DIP
Packaging: Tube
Package / Case: 14-DIP (0.300", 7.62mm)
Mounting Type: Through Hole
Logic Type: XOR (Exclusive OR)
Operating Temperature: -40°C ~ 85°C
Voltage - Supply: 2V ~ 6V
Current - Output High, Low: 24mA, 24mA
Number of Inputs: 2
Supplier Device Package: 14-PDIP
Input Logic Level - High: 2.1V ~ 3.85V
Input Logic Level - Low: 0.9V ~ 1.65V
Max Propagation Delay @ V, Max CL: 8.5ns @ 5V, 50pF
Number of Circuits: 4
Current - Quiescent (Max): 4 µA
Description: IC GATE XOR 4CH 2-INP 14DIP
Packaging: Tube
Package / Case: 14-DIP (0.300", 7.62mm)
Mounting Type: Through Hole
Logic Type: XOR (Exclusive OR)
Operating Temperature: -40°C ~ 85°C
Voltage - Supply: 2V ~ 6V
Current - Output High, Low: 24mA, 24mA
Number of Inputs: 2
Supplier Device Package: 14-PDIP
Input Logic Level - High: 2.1V ~ 3.85V
Input Logic Level - Low: 0.9V ~ 1.65V
Max Propagation Delay @ V, Max CL: 8.5ns @ 5V, 50pF
Number of Circuits: 4
Current - Quiescent (Max): 4 µA
auf Bestellung 1075 Stücke:
Lieferzeit 10-14 Tag (e)| Anzahl | Preis |
|---|---|
| 841+ | 0.54 EUR |
| NB3U1548CDTR2G |
|
Hersteller: onsemi
Description: IC CLK BUFFER 1:4 160MHZ 8TSSOP
Packaging: Tape & Reel (TR)
Package / Case: 8-TSSOP (0.173", 4.40mm Width)
Number of Circuits: 1
Mounting Type: Surface Mount
Output: LVCMOS
Type: Fanout Buffer (Distribution)
Input: LVCMOS
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 1.4V ~ 3.465V
Ratio - Input:Output: 1:4
Differential - Input:Output: No/No
Supplier Device Package: 8-TSSOP
Frequency - Max: 160 MHz
Description: IC CLK BUFFER 1:4 160MHZ 8TSSOP
Packaging: Tape & Reel (TR)
Package / Case: 8-TSSOP (0.173", 4.40mm Width)
Number of Circuits: 1
Mounting Type: Surface Mount
Output: LVCMOS
Type: Fanout Buffer (Distribution)
Input: LVCMOS
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 1.4V ~ 3.465V
Ratio - Input:Output: 1:4
Differential - Input:Output: No/No
Supplier Device Package: 8-TSSOP
Frequency - Max: 160 MHz
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| NB3U1548CDTR2G |
|
Hersteller: onsemi
Description: IC CLK BUFFER 1:4 160MHZ 8TSSOP
Packaging: Cut Tape (CT)
Package / Case: 8-TSSOP (0.173", 4.40mm Width)
Number of Circuits: 1
Mounting Type: Surface Mount
Output: LVCMOS
Type: Fanout Buffer (Distribution)
Input: LVCMOS
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 1.4V ~ 3.465V
Ratio - Input:Output: 1:4
Differential - Input:Output: No/No
Supplier Device Package: 8-TSSOP
Frequency - Max: 160 MHz
Description: IC CLK BUFFER 1:4 160MHZ 8TSSOP
Packaging: Cut Tape (CT)
Package / Case: 8-TSSOP (0.173", 4.40mm Width)
Number of Circuits: 1
Mounting Type: Surface Mount
Output: LVCMOS
Type: Fanout Buffer (Distribution)
Input: LVCMOS
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 1.4V ~ 3.465V
Ratio - Input:Output: 1:4
Differential - Input:Output: No/No
Supplier Device Package: 8-TSSOP
Frequency - Max: 160 MHz
auf Bestellung 935 Stücke:
Lieferzeit 10-14 Tag (e)| Anzahl | Preis |
|---|---|
| 3+ | 8.64 EUR |
| 10+ | 6.62 EUR |
| 25+ | 6.12 EUR |
| 100+ | 5.56 EUR |
| 250+ | 5.5 EUR |
| NLV74HCT14ADTR2G |
Hersteller: onsemi
Description: IC INVERTER 6CH 1-INP 14TSSOP
Features: Schmitt Trigger
Packaging: Bulk
Package / Case: 14-TSSOP (0.173", 4.40mm Width)
Mounting Type: Surface Mount
Logic Type: Inverter
Operating Temperature: -55°C ~ 125°C
Voltage - Supply: 4.5V ~ 5.5V
Current - Output High, Low: 4mA, 4mA
Number of Inputs: 1
Supplier Device Package: 14-TSSOP
Input Logic Level - High: 1.9V ~ 2.1V
Input Logic Level - Low: 0.5V ~ 0.6V
Max Propagation Delay @ V, Max CL: 32ns @ 5V, 50pF
Grade: Automotive
Number of Circuits: 6
Current - Quiescent (Max): 1 µA
Qualification: AEC-Q100
Description: IC INVERTER 6CH 1-INP 14TSSOP
Features: Schmitt Trigger
Packaging: Bulk
Package / Case: 14-TSSOP (0.173", 4.40mm Width)
Mounting Type: Surface Mount
Logic Type: Inverter
Operating Temperature: -55°C ~ 125°C
Voltage - Supply: 4.5V ~ 5.5V
Current - Output High, Low: 4mA, 4mA
Number of Inputs: 1
Supplier Device Package: 14-TSSOP
Input Logic Level - High: 1.9V ~ 2.1V
Input Logic Level - Low: 0.5V ~ 0.6V
Max Propagation Delay @ V, Max CL: 32ns @ 5V, 50pF
Grade: Automotive
Number of Circuits: 6
Current - Quiescent (Max): 1 µA
Qualification: AEC-Q100
auf Bestellung 44023 Stücke:
Lieferzeit 10-14 Tag (e)| Anzahl | Preis |
|---|---|
| 10+ | 47.79 EUR |
| ESD8111FCT5G |
|
Hersteller: onsemi
Description: LOW CAP SCR IN 0201 DSN
Packaging: Tape & Reel (TR)
Package / Case: 2-XFBGA, WLCSP
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 150°C (TJ)
Applications: USB
Capacitance @ Frequency: 0.2pF @ 1MHz
Current - Peak Pulse (10/1000µs): 7.1A
Voltage - Reverse Standoff (Typ): 3.3V (Max)
Supplier Device Package: 2-WLCSP (0.6x0.3)
Bidirectional Channels: 1
Voltage - Breakdown (Min): 5.5V
Voltage - Clamping (Max) @ Ipp: 8V
Power Line Protection: No
Description: LOW CAP SCR IN 0201 DSN
Packaging: Tape & Reel (TR)
Package / Case: 2-XFBGA, WLCSP
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 150°C (TJ)
Applications: USB
Capacitance @ Frequency: 0.2pF @ 1MHz
Current - Peak Pulse (10/1000µs): 7.1A
Voltage - Reverse Standoff (Typ): 3.3V (Max)
Supplier Device Package: 2-WLCSP (0.6x0.3)
Bidirectional Channels: 1
Voltage - Breakdown (Min): 5.5V
Voltage - Clamping (Max) @ Ipp: 8V
Power Line Protection: No
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| ESD8111FCT5G |
|
Hersteller: onsemi
Description: LOW CAP SCR IN 0201 DSN
Packaging: Cut Tape (CT)
Package / Case: 2-XFBGA, WLCSP
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 150°C (TJ)
Applications: USB
Capacitance @ Frequency: 0.2pF @ 1MHz
Current - Peak Pulse (10/1000µs): 7.1A
Voltage - Reverse Standoff (Typ): 3.3V (Max)
Supplier Device Package: 2-WLCSP (0.6x0.3)
Bidirectional Channels: 1
Voltage - Breakdown (Min): 5.5V
Voltage - Clamping (Max) @ Ipp: 8V
Power Line Protection: No
Description: LOW CAP SCR IN 0201 DSN
Packaging: Cut Tape (CT)
Package / Case: 2-XFBGA, WLCSP
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 150°C (TJ)
Applications: USB
Capacitance @ Frequency: 0.2pF @ 1MHz
Current - Peak Pulse (10/1000µs): 7.1A
Voltage - Reverse Standoff (Typ): 3.3V (Max)
Supplier Device Package: 2-WLCSP (0.6x0.3)
Bidirectional Channels: 1
Voltage - Breakdown (Min): 5.5V
Voltage - Clamping (Max) @ Ipp: 8V
Power Line Protection: No
auf Bestellung 8880 Stücke:
Lieferzeit 10-14 Tag (e)| Anzahl | Preis |
|---|---|
| 28+ | 0.63 EUR |
| 39+ | 0.45 EUR |
| 100+ | 0.23 EUR |
| 500+ | 0.2 EUR |
| 1000+ | 0.16 EUR |
| 2000+ | 0.14 EUR |
| ESD8118MUTAG |
|
Hersteller: onsemi
Description: TVS DIODE 3.3VWM 11.4VC 10UDFN
Packaging: Bulk
Package / Case: 10-UFDFN
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 125°C (TJ)
Applications: HDMI
Capacitance @ Frequency: 0.3pF @ 1MHz
Current - Peak Pulse (10/1000µs): 16A
Voltage - Reverse Standoff (Typ): 3.3V (Max)
Supplier Device Package: 10-UDFN (3.2x1.2)
Unidirectional Channels: 8
Voltage - Breakdown (Min): 4V
Voltage - Clamping (Max) @ Ipp: 11.4V (Typ)
Power Line Protection: No
Description: TVS DIODE 3.3VWM 11.4VC 10UDFN
Packaging: Bulk
Package / Case: 10-UFDFN
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 125°C (TJ)
Applications: HDMI
Capacitance @ Frequency: 0.3pF @ 1MHz
Current - Peak Pulse (10/1000µs): 16A
Voltage - Reverse Standoff (Typ): 3.3V (Max)
Supplier Device Package: 10-UDFN (3.2x1.2)
Unidirectional Channels: 8
Voltage - Breakdown (Min): 4V
Voltage - Clamping (Max) @ Ipp: 11.4V (Typ)
Power Line Protection: No
auf Bestellung 783000 Stücke:
Lieferzeit 10-14 Tag (e)| Anzahl | Preis |
|---|---|
| 3549+ | 0.13 EUR |
| ESD8501V5MUT5G |
|
Hersteller: onsemi
Description: TVS DIODE 5VWM 11.5VC 2UDFN
Packaging: Tape & Reel (TR)
Package / Case: 2-UDFN
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -65°C ~ 150°C (TJ)
Applications: General Purpose
Capacitance @ Frequency: 16pF @ 0V, 1MHz (Max)
Current - Peak Pulse (10/1000µs): 70A (8/20µs)
Voltage - Reverse Standoff (Typ): 5V (Max)
Supplier Device Package: 2-UDFN (1.6x1)
Unidirectional Channels: 1
Voltage - Breakdown (Min): 6V
Voltage - Clamping (Max) @ Ipp: 11.5V
Power Line Protection: No
Description: TVS DIODE 5VWM 11.5VC 2UDFN
Packaging: Tape & Reel (TR)
Package / Case: 2-UDFN
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -65°C ~ 150°C (TJ)
Applications: General Purpose
Capacitance @ Frequency: 16pF @ 0V, 1MHz (Max)
Current - Peak Pulse (10/1000µs): 70A (8/20µs)
Voltage - Reverse Standoff (Typ): 5V (Max)
Supplier Device Package: 2-UDFN (1.6x1)
Unidirectional Channels: 1
Voltage - Breakdown (Min): 6V
Voltage - Clamping (Max) @ Ipp: 11.5V
Power Line Protection: No
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| ESD8501V5MUT5G |
|
Hersteller: onsemi
Description: TVS DIODE 5VWM 11.5VC 2UDFN
Packaging: Bulk
Package / Case: 2-UDFN
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -65°C ~ 150°C (TJ)
Applications: General Purpose
Capacitance @ Frequency: 16pF @ 0V, 1MHz (Max)
Current - Peak Pulse (10/1000µs): 70A (8/20µs)
Voltage - Reverse Standoff (Typ): 5V (Max)
Supplier Device Package: 2-UDFN (1.6x1)
Unidirectional Channels: 1
Voltage - Breakdown (Min): 6V
Voltage - Clamping (Max) @ Ipp: 11.5V
Power Line Protection: No
Description: TVS DIODE 5VWM 11.5VC 2UDFN
Packaging: Bulk
Package / Case: 2-UDFN
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -65°C ~ 150°C (TJ)
Applications: General Purpose
Capacitance @ Frequency: 16pF @ 0V, 1MHz (Max)
Current - Peak Pulse (10/1000µs): 70A (8/20µs)
Voltage - Reverse Standoff (Typ): 5V (Max)
Supplier Device Package: 2-UDFN (1.6x1)
Unidirectional Channels: 1
Voltage - Breakdown (Min): 6V
Voltage - Clamping (Max) @ Ipp: 11.5V
Power Line Protection: No
auf Bestellung 6340438 Stücke:
Lieferzeit 10-14 Tag (e)| Anzahl | Preis |
|---|---|
| 2049+ | 0.25 EUR |
| SZESD8104MUTAG |
|
Hersteller: onsemi
Description: TVS DIODE 3.3VWM 11.4VC 10UDFN
Packaging: Bulk
Package / Case: 10-UFDFN
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 125°C (TJ)
Applications: HDMI, USB
Capacitance @ Frequency: 0.3pF @ 1MHz
Current - Peak Pulse (10/1000µs): 16A
Voltage - Reverse Standoff (Typ): 3.3V (Max)
Supplier Device Package: 10-UDFN (2.5x1)
Unidirectional Channels: 4
Voltage - Breakdown (Min): 4V
Voltage - Clamping (Max) @ Ipp: 11.4V (Typ)
Power Line Protection: No
Grade: Automotive
Qualification: AEC-Q101
Description: TVS DIODE 3.3VWM 11.4VC 10UDFN
Packaging: Bulk
Package / Case: 10-UFDFN
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 125°C (TJ)
Applications: HDMI, USB
Capacitance @ Frequency: 0.3pF @ 1MHz
Current - Peak Pulse (10/1000µs): 16A
Voltage - Reverse Standoff (Typ): 3.3V (Max)
Supplier Device Package: 10-UDFN (2.5x1)
Unidirectional Channels: 4
Voltage - Breakdown (Min): 4V
Voltage - Clamping (Max) @ Ipp: 11.4V (Typ)
Power Line Protection: No
Grade: Automotive
Qualification: AEC-Q101
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| ESD8116MUTAG |
|
Hersteller: onsemi
Description: ESD8116 - ESD Protection Array,
Packaging: Bulk
Package / Case: 8-UFDFN
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 125°C (TJ)
Applications: USB
Capacitance @ Frequency: 0.3pF @ 1MHz
Current - Peak Pulse (10/1000µs): 16A
Voltage - Reverse Standoff (Typ): 3.3V (Max)
Supplier Device Package: 8-UDFN (2x1.2)
Unidirectional Channels: 6
Voltage - Breakdown (Min): 4V
Voltage - Clamping (Max) @ Ipp: 11.4V (Typ)
Power Line Protection: No
Description: ESD8116 - ESD Protection Array,
Packaging: Bulk
Package / Case: 8-UFDFN
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 125°C (TJ)
Applications: USB
Capacitance @ Frequency: 0.3pF @ 1MHz
Current - Peak Pulse (10/1000µs): 16A
Voltage - Reverse Standoff (Typ): 3.3V (Max)
Supplier Device Package: 8-UDFN (2x1.2)
Unidirectional Channels: 6
Voltage - Breakdown (Min): 4V
Voltage - Clamping (Max) @ Ipp: 11.4V (Typ)
Power Line Protection: No
auf Bestellung 1907549 Stücke:
Lieferzeit 10-14 Tag (e)| Anzahl | Preis |
|---|---|
| 3549+ | 0.13 EUR |
| SZESD8351MUT5G |
|
Hersteller: onsemi
Description: TVS DIODE 3.3VWM 11.2VC 2X3DFN
Packaging: Tape & Reel (TR)
Package / Case: 0201 (0603 Metric)
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 125°C (TJ)
Capacitance @ Frequency: 0.25pF @ 1MHz
Current - Peak Pulse (10/1000µs): 5A (8/20µs)
Voltage - Reverse Standoff (Typ): 3.3V (Max)
Supplier Device Package: 2-X3DFN (0.6x0.3) (0201)
Unidirectional Channels: 1
Voltage - Breakdown (Min): 5.5V
Voltage - Clamping (Max) @ Ipp: 11.2V
Power Line Protection: No
Grade: Automotive
Qualification: AEC-Q101
Description: TVS DIODE 3.3VWM 11.2VC 2X3DFN
Packaging: Tape & Reel (TR)
Package / Case: 0201 (0603 Metric)
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 125°C (TJ)
Capacitance @ Frequency: 0.25pF @ 1MHz
Current - Peak Pulse (10/1000µs): 5A (8/20µs)
Voltage - Reverse Standoff (Typ): 3.3V (Max)
Supplier Device Package: 2-X3DFN (0.6x0.3) (0201)
Unidirectional Channels: 1
Voltage - Breakdown (Min): 5.5V
Voltage - Clamping (Max) @ Ipp: 11.2V
Power Line Protection: No
Grade: Automotive
Qualification: AEC-Q101
auf Bestellung 40000 Stücke:
Lieferzeit 10-14 Tag (e)| Anzahl | Preis |
|---|---|
| 10000+ | 0.14 EUR |
| 30000+ | 0.13 EUR |
| SZESD8351MUT5G |
|
Hersteller: onsemi
Description: TVS DIODE 3.3VWM 11.2VC 2X3DFN
Packaging: Cut Tape (CT)
Package / Case: 0201 (0603 Metric)
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 125°C (TJ)
Capacitance @ Frequency: 0.25pF @ 1MHz
Current - Peak Pulse (10/1000µs): 5A (8/20µs)
Voltage - Reverse Standoff (Typ): 3.3V (Max)
Supplier Device Package: 2-X3DFN (0.6x0.3) (0201)
Unidirectional Channels: 1
Voltage - Breakdown (Min): 5.5V
Voltage - Clamping (Max) @ Ipp: 11.2V
Power Line Protection: No
Grade: Automotive
Qualification: AEC-Q101
Description: TVS DIODE 3.3VWM 11.2VC 2X3DFN
Packaging: Cut Tape (CT)
Package / Case: 0201 (0603 Metric)
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 125°C (TJ)
Capacitance @ Frequency: 0.25pF @ 1MHz
Current - Peak Pulse (10/1000µs): 5A (8/20µs)
Voltage - Reverse Standoff (Typ): 3.3V (Max)
Supplier Device Package: 2-X3DFN (0.6x0.3) (0201)
Unidirectional Channels: 1
Voltage - Breakdown (Min): 5.5V
Voltage - Clamping (Max) @ Ipp: 11.2V
Power Line Protection: No
Grade: Automotive
Qualification: AEC-Q101
auf Bestellung 40000 Stücke:
Lieferzeit 10-14 Tag (e)| Anzahl | Preis |
|---|---|
| 31+ | 0.58 EUR |
| 39+ | 0.45 EUR |
| 100+ | 0.27 EUR |
| 500+ | 0.25 EUR |
| 1000+ | 0.17 EUR |
| 2000+ | 0.16 EUR |
| 5000+ | 0.15 EUR |
| ESD8551N2T5G |
|
Hersteller: onsemi
Description: TVS DIODE 3.3VWM 16VC 2X2DFN
Packaging: Tape & Reel (TR)
Package / Case: 2-XDFN
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 125°C (TJ)
Applications: General Purpose
Capacitance @ Frequency: 0.2pF @ 1MHz
Voltage - Reverse Standoff (Typ): 3.3V (Max)
Supplier Device Package: 2-X2DFN (1x0.6)
Bidirectional Channels: 1
Voltage - Breakdown (Min): 5.5V
Voltage - Clamping (Max) @ Ipp: 16V (Typ)
Power Line Protection: No
Description: TVS DIODE 3.3VWM 16VC 2X2DFN
Packaging: Tape & Reel (TR)
Package / Case: 2-XDFN
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 125°C (TJ)
Applications: General Purpose
Capacitance @ Frequency: 0.2pF @ 1MHz
Voltage - Reverse Standoff (Typ): 3.3V (Max)
Supplier Device Package: 2-X2DFN (1x0.6)
Bidirectional Channels: 1
Voltage - Breakdown (Min): 5.5V
Voltage - Clamping (Max) @ Ipp: 16V (Typ)
Power Line Protection: No
auf Bestellung 160000 Stücke:
Lieferzeit 10-14 Tag (e)| Anzahl | Preis |
|---|---|
| 8000+ | 0.11 EUR |
| 16000+ | 0.1 EUR |
| 24000+ | 0.098 EUR |
| 40000+ | 0.092 EUR |
| 56000+ | 0.089 EUR |
| 80000+ | 0.086 EUR |
| ESD8551N2T5G |
|
Hersteller: onsemi
Description: TVS DIODE 3.3VWM 16VC 2X2DFN
Packaging: Cut Tape (CT)
Package / Case: 2-XDFN
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 125°C (TJ)
Applications: General Purpose
Capacitance @ Frequency: 0.2pF @ 1MHz
Voltage - Reverse Standoff (Typ): 3.3V (Max)
Supplier Device Package: 2-X2DFN (1x0.6)
Bidirectional Channels: 1
Voltage - Breakdown (Min): 5.5V
Voltage - Clamping (Max) @ Ipp: 16V (Typ)
Power Line Protection: No
Description: TVS DIODE 3.3VWM 16VC 2X2DFN
Packaging: Cut Tape (CT)
Package / Case: 2-XDFN
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 125°C (TJ)
Applications: General Purpose
Capacitance @ Frequency: 0.2pF @ 1MHz
Voltage - Reverse Standoff (Typ): 3.3V (Max)
Supplier Device Package: 2-X2DFN (1x0.6)
Bidirectional Channels: 1
Voltage - Breakdown (Min): 5.5V
Voltage - Clamping (Max) @ Ipp: 16V (Typ)
Power Line Protection: No
auf Bestellung 164230 Stücke:
Lieferzeit 10-14 Tag (e)| Anzahl | Preis |
|---|---|
| 30+ | 0.6 EUR |
| 47+ | 0.37 EUR |
| 100+ | 0.24 EUR |
| 500+ | 0.17 EUR |
| 1000+ | 0.16 EUR |
| 2000+ | 0.14 EUR |
| SZESD8551N2T5G |
|
Hersteller: onsemi
Description: TVS DIODE 3.3VWM 16VC 2X2DFN
Packaging: Tape & Reel (TR)
Package / Case: 2-XDFN
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 125°C (TJ)
Applications: USB 3.0
Capacitance @ Frequency: 0.3pF @ 1MHz (Max)
Current - Peak Pulse (10/1000µs): 16A
Voltage - Reverse Standoff (Typ): 3.3V (Max)
Supplier Device Package: 2-X2DFN (1x0.6)
Bidirectional Channels: 1
Voltage - Breakdown (Min): 5.5V
Voltage - Clamping (Max) @ Ipp: 16V (Typ)
Power Line Protection: No
Grade: Automotive
Qualification: AEC-Q101
Description: TVS DIODE 3.3VWM 16VC 2X2DFN
Packaging: Tape & Reel (TR)
Package / Case: 2-XDFN
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 125°C (TJ)
Applications: USB 3.0
Capacitance @ Frequency: 0.3pF @ 1MHz (Max)
Current - Peak Pulse (10/1000µs): 16A
Voltage - Reverse Standoff (Typ): 3.3V (Max)
Supplier Device Package: 2-X2DFN (1x0.6)
Bidirectional Channels: 1
Voltage - Breakdown (Min): 5.5V
Voltage - Clamping (Max) @ Ipp: 16V (Typ)
Power Line Protection: No
Grade: Automotive
Qualification: AEC-Q101
auf Bestellung 8000 Stücke:
Lieferzeit 10-14 Tag (e)| Anzahl | Preis |
|---|---|
| 8000+ | 0.11 EUR |
| SZESD8551N2T5G |
|
Hersteller: onsemi
Description: TVS DIODE 3.3VWM 16VC 2X2DFN
Packaging: Cut Tape (CT)
Package / Case: 2-XDFN
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 125°C (TJ)
Applications: USB 3.0
Capacitance @ Frequency: 0.3pF @ 1MHz (Max)
Current - Peak Pulse (10/1000µs): 16A
Voltage - Reverse Standoff (Typ): 3.3V (Max)
Supplier Device Package: 2-X2DFN (1x0.6)
Bidirectional Channels: 1
Voltage - Breakdown (Min): 5.5V
Voltage - Clamping (Max) @ Ipp: 16V (Typ)
Power Line Protection: No
Grade: Automotive
Qualification: AEC-Q101
Description: TVS DIODE 3.3VWM 16VC 2X2DFN
Packaging: Cut Tape (CT)
Package / Case: 2-XDFN
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 125°C (TJ)
Applications: USB 3.0
Capacitance @ Frequency: 0.3pF @ 1MHz (Max)
Current - Peak Pulse (10/1000µs): 16A
Voltage - Reverse Standoff (Typ): 3.3V (Max)
Supplier Device Package: 2-X2DFN (1x0.6)
Bidirectional Channels: 1
Voltage - Breakdown (Min): 5.5V
Voltage - Clamping (Max) @ Ipp: 16V (Typ)
Power Line Protection: No
Grade: Automotive
Qualification: AEC-Q101
auf Bestellung 8000 Stücke:
Lieferzeit 10-14 Tag (e)| Anzahl | Preis |
|---|---|
| 23+ | 0.79 EUR |
| 24+ | 0.76 EUR |
| 100+ | 0.74 EUR |
| 500+ | 0.65 EUR |
| 1000+ | 0.17 EUR |
| 2000+ | 0.15 EUR |
| MMSZ5254BT1 |
|
Hersteller: onsemi
Description: DIODE ZENER 27V 500MW SOD-123
Tolerance: ±5%
Packaging: Tape & Reel (TR)
Package / Case: SOD-123
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C
Voltage - Zener (Nom) (Vz): 27 V
Impedance (Max) (Zzt): 41 Ohms
Supplier Device Package: SOD-123
Power - Max: 500 mW
Voltage - Forward (Vf) (Max) @ If: 900 mV @ 10 mA
Current - Reverse Leakage @ Vr: 100 nA @ 21 V
Description: DIODE ZENER 27V 500MW SOD-123
Tolerance: ±5%
Packaging: Tape & Reel (TR)
Package / Case: SOD-123
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C
Voltage - Zener (Nom) (Vz): 27 V
Impedance (Max) (Zzt): 41 Ohms
Supplier Device Package: SOD-123
Power - Max: 500 mW
Voltage - Forward (Vf) (Max) @ If: 900 mV @ 10 mA
Current - Reverse Leakage @ Vr: 100 nA @ 21 V
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| CM6320 |
|
Hersteller: onsemi
Description: FILTER RC(PI) 70 OHMS ESD SMD
Packaging: Bulk
Package / Case: 24-UFBGA, WLCSP
Size / Dimension: 0.077" L x 0.077" W (1.96mm x 1.96mm)
Mounting Type: Surface Mount
Type: Low Pass
Operating Temperature: -40°C ~ 85°C
Values: R = 70Ohms, C = 30pF
Height: 0.025" (0.64mm)
Filter Order: 2nd
Applications: Data Lines for Mobile Devices
Technology: RC (Pi)
Resistance - Channel (Ohms): 70
ESD Protection: Yes
Number of Channels: 10
Description: FILTER RC(PI) 70 OHMS ESD SMD
Packaging: Bulk
Package / Case: 24-UFBGA, WLCSP
Size / Dimension: 0.077" L x 0.077" W (1.96mm x 1.96mm)
Mounting Type: Surface Mount
Type: Low Pass
Operating Temperature: -40°C ~ 85°C
Values: R = 70Ohms, C = 30pF
Height: 0.025" (0.64mm)
Filter Order: 2nd
Applications: Data Lines for Mobile Devices
Technology: RC (Pi)
Resistance - Channel (Ohms): 70
ESD Protection: Yes
Number of Channels: 10
auf Bestellung 5000 Stücke:
Lieferzeit 10-14 Tag (e)| Anzahl | Preis |
|---|---|
| 1268+ | 0.4 EUR |
| MC79L24ACPRPG |
|
Hersteller: onsemi
Description: IC REG LINEAR -24V 100MA TO92
Packaging: Cut Tape (CT)
Package / Case: TO-226-3, TO-92-3 Long Body, Formed Leads
Output Type: Fixed
Mounting Type: Through Hole
Current - Output: 100mA
Operating Temperature: 0°C ~ 125°C
Output Configuration: Negative
Voltage - Input (Max): -40V
Number of Regulators: 1
Supplier Device Package: TO-92 (TO-226)
Voltage - Output (Min/Fixed): -24V
PSRR: 47dB (120Hz)
Voltage Dropout (Max): 1.7V @ 40mA (Typ)
Protection Features: Over Temperature, Short Circuit
Description: IC REG LINEAR -24V 100MA TO92
Packaging: Cut Tape (CT)
Package / Case: TO-226-3, TO-92-3 Long Body, Formed Leads
Output Type: Fixed
Mounting Type: Through Hole
Current - Output: 100mA
Operating Temperature: 0°C ~ 125°C
Output Configuration: Negative
Voltage - Input (Max): -40V
Number of Regulators: 1
Supplier Device Package: TO-92 (TO-226)
Voltage - Output (Min/Fixed): -24V
PSRR: 47dB (120Hz)
Voltage Dropout (Max): 1.7V @ 40mA (Typ)
Protection Features: Over Temperature, Short Circuit
auf Bestellung 11987 Stücke:
Lieferzeit 10-14 Tag (e)| Anzahl | Preis |
|---|---|
| 46+ | 0.39 EUR |
| 66+ | 0.27 EUR |
| 75+ | 0.24 EUR |
| 100+ | 0.2 EUR |
| 250+ | 0.19 EUR |
| 500+ | 0.18 EUR |
| 1000+ | 0.17 EUR |
| MC79L24ACPRPG |
|
Hersteller: onsemi
Description: IC REG LINEAR -24V 100MA TO92
Packaging: Tape & Box (TB)
Package / Case: TO-226-3, TO-92-3 Long Body, Formed Leads
Output Type: Fixed
Mounting Type: Through Hole
Current - Output: 100mA
Operating Temperature: 0°C ~ 125°C
Output Configuration: Negative
Voltage - Input (Max): -40V
Number of Regulators: 1
Supplier Device Package: TO-92 (TO-226)
Voltage - Output (Min/Fixed): -24V
PSRR: 47dB (120Hz)
Voltage Dropout (Max): 1.7V @ 40mA (Typ)
Protection Features: Over Temperature, Short Circuit
Description: IC REG LINEAR -24V 100MA TO92
Packaging: Tape & Box (TB)
Package / Case: TO-226-3, TO-92-3 Long Body, Formed Leads
Output Type: Fixed
Mounting Type: Through Hole
Current - Output: 100mA
Operating Temperature: 0°C ~ 125°C
Output Configuration: Negative
Voltage - Input (Max): -40V
Number of Regulators: 1
Supplier Device Package: TO-92 (TO-226)
Voltage - Output (Min/Fixed): -24V
PSRR: 47dB (120Hz)
Voltage Dropout (Max): 1.7V @ 40mA (Typ)
Protection Features: Over Temperature, Short Circuit
auf Bestellung 10000 Stücke:
Lieferzeit 10-14 Tag (e)| Anzahl | Preis |
|---|---|
| 2000+ | 0.16 EUR |
| 6000+ | 0.15 EUR |
| FSL518HPG |
|
Hersteller: onsemi
Description: IC OFFLINE SWITCH FLYBACK 7DIP
Packaging: Tube
Package / Case: 8-DIP (0.300", 7.62mm), 7 Leads
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 125°C (TJ)
Frequency - Switching: 130kHz
Internal Switch(s): Yes
Voltage - Breakdown: 800V
Output Isolation: Either
Topology: Flyback
Supplier Device Package: 7-PDIP
Fault Protection: Current Limiting, Over Load, Over Power, Over Temperature, Over Voltage
Voltage - Start Up: 16 V
Control Features: EN, Soft Start
Power (Watts): 15 W
Description: IC OFFLINE SWITCH FLYBACK 7DIP
Packaging: Tube
Package / Case: 8-DIP (0.300", 7.62mm), 7 Leads
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 125°C (TJ)
Frequency - Switching: 130kHz
Internal Switch(s): Yes
Voltage - Breakdown: 800V
Output Isolation: Either
Topology: Flyback
Supplier Device Package: 7-PDIP
Fault Protection: Current Limiting, Over Load, Over Power, Over Temperature, Over Voltage
Voltage - Start Up: 16 V
Control Features: EN, Soft Start
Power (Watts): 15 W
auf Bestellung 2958 Stücke:
Lieferzeit 10-14 Tag (e)| Anzahl | Preis |
|---|---|
| 6+ | 3.5 EUR |
| 10+ | 2.2 EUR |
| 50+ | 1.64 EUR |
| 100+ | 1.47 EUR |
| 250+ | 1.28 EUR |
| 500+ | 1.16 EUR |
| 1000+ | 1.06 EUR |
| 2500+ | 0.96 EUR |
| MC79L18ACPG |
|
Hersteller: onsemi
Description: FIXED NEGATIVE STANDARD REGULATO
Packaging: Bulk
Package / Case: TO-226-3, TO-92-3 Long Body
Output Type: Fixed
Mounting Type: Through Hole
Current - Output: 100mA
Operating Temperature: 0°C ~ 125°C
Output Configuration: Negative
Voltage - Input (Max): -35V
Number of Regulators: 1
Supplier Device Package: TO-92 (TO-226)
Voltage - Output (Min/Fixed): -18V
PSRR: 48dB (120Hz)
Voltage Dropout (Max): 1.7V @ 40mA (Typ)
Protection Features: Over Temperature, Short Circuit
Description: FIXED NEGATIVE STANDARD REGULATO
Packaging: Bulk
Package / Case: TO-226-3, TO-92-3 Long Body
Output Type: Fixed
Mounting Type: Through Hole
Current - Output: 100mA
Operating Temperature: 0°C ~ 125°C
Output Configuration: Negative
Voltage - Input (Max): -35V
Number of Regulators: 1
Supplier Device Package: TO-92 (TO-226)
Voltage - Output (Min/Fixed): -18V
PSRR: 48dB (120Hz)
Voltage Dropout (Max): 1.7V @ 40mA (Typ)
Protection Features: Over Temperature, Short Circuit
auf Bestellung 43130 Stücke:
Lieferzeit 10-14 Tag (e)| Anzahl | Preis |
|---|---|
| 2609+ | 0.2 EUR |
| NVMJD010N10MCLTWG |
|
Hersteller: onsemi
Description: PTNG 100V N-CH LL IN LFPAK56 DUA
Packaging: Tape & Reel (TR)
Package / Case: SOT-1205, 8-LFPAK56
Mounting Type: Surface Mount
Configuration: 2 N-Channel
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 3.1W (Ta), 84W (Tc)
Drain to Source Voltage (Vdss): 100V
Current - Continuous Drain (Id) @ 25°C: 11.8A (Ta), 62A (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 1795pF @ 50V
Rds On (Max) @ Id, Vgs: 10mOhm @ 17A, 10V
Gate Charge (Qg) (Max) @ Vgs: 26.4nC @ 10V
Vgs(th) (Max) @ Id: 3V @ 97µA
Supplier Device Package: 8-LFPAK
Grade: Automotive
Qualification: AEC-Q101
Description: PTNG 100V N-CH LL IN LFPAK56 DUA
Packaging: Tape & Reel (TR)
Package / Case: SOT-1205, 8-LFPAK56
Mounting Type: Surface Mount
Configuration: 2 N-Channel
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 3.1W (Ta), 84W (Tc)
Drain to Source Voltage (Vdss): 100V
Current - Continuous Drain (Id) @ 25°C: 11.8A (Ta), 62A (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 1795pF @ 50V
Rds On (Max) @ Id, Vgs: 10mOhm @ 17A, 10V
Gate Charge (Qg) (Max) @ Vgs: 26.4nC @ 10V
Vgs(th) (Max) @ Id: 3V @ 97µA
Supplier Device Package: 8-LFPAK
Grade: Automotive
Qualification: AEC-Q101
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| NVMJD010N10MCLTWG |
|
Hersteller: onsemi
Description: PTNG 100V N-CH LL IN LFPAK56 DUA
Packaging: Cut Tape (CT)
Package / Case: SOT-1205, 8-LFPAK56
Mounting Type: Surface Mount
Configuration: 2 N-Channel
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 3.1W (Ta), 84W (Tc)
Drain to Source Voltage (Vdss): 100V
Current - Continuous Drain (Id) @ 25°C: 11.8A (Ta), 62A (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 1795pF @ 50V
Rds On (Max) @ Id, Vgs: 10mOhm @ 17A, 10V
Gate Charge (Qg) (Max) @ Vgs: 26.4nC @ 10V
Vgs(th) (Max) @ Id: 3V @ 97µA
Supplier Device Package: 8-LFPAK
Grade: Automotive
Qualification: AEC-Q101
Description: PTNG 100V N-CH LL IN LFPAK56 DUA
Packaging: Cut Tape (CT)
Package / Case: SOT-1205, 8-LFPAK56
Mounting Type: Surface Mount
Configuration: 2 N-Channel
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 3.1W (Ta), 84W (Tc)
Drain to Source Voltage (Vdss): 100V
Current - Continuous Drain (Id) @ 25°C: 11.8A (Ta), 62A (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 1795pF @ 50V
Rds On (Max) @ Id, Vgs: 10mOhm @ 17A, 10V
Gate Charge (Qg) (Max) @ Vgs: 26.4nC @ 10V
Vgs(th) (Max) @ Id: 3V @ 97µA
Supplier Device Package: 8-LFPAK
Grade: Automotive
Qualification: AEC-Q101
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| FDB9503L-F085 |
|
Hersteller: onsemi
Description: MOSFET P-CH 40V 110A D2PAK
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 110A (Tc)
Rds On (Max) @ Id, Vgs: 2.6mOhm @ 80A, 10V
Power Dissipation (Max): 333W (Tj)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: TO-263 (D2Pak)
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±16V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 255 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 8320 pF @ 20 V
Qualification: AEC-Q101
Description: MOSFET P-CH 40V 110A D2PAK
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 110A (Tc)
Rds On (Max) @ Id, Vgs: 2.6mOhm @ 80A, 10V
Power Dissipation (Max): 333W (Tj)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: TO-263 (D2Pak)
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±16V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 255 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 8320 pF @ 20 V
Qualification: AEC-Q101
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| FDB9503L-F085 |
|
Hersteller: onsemi
Description: MOSFET P-CH 40V 110A D2PAK
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 110A (Tc)
Rds On (Max) @ Id, Vgs: 2.6mOhm @ 80A, 10V
Power Dissipation (Max): 333W (Tj)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: TO-263 (D2Pak)
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±16V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 255 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 8320 pF @ 20 V
Qualification: AEC-Q101
Description: MOSFET P-CH 40V 110A D2PAK
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 110A (Tc)
Rds On (Max) @ Id, Vgs: 2.6mOhm @ 80A, 10V
Power Dissipation (Max): 333W (Tj)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: TO-263 (D2Pak)
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±16V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 255 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 8320 pF @ 20 V
Qualification: AEC-Q101
auf Bestellung 654 Stücke:
Lieferzeit 10-14 Tag (e)| Anzahl | Preis |
|---|---|
| 3+ | 8.31 EUR |
| 10+ | 5.81 EUR |
| 100+ | 4.33 EUR |
| FDB9409-F085 |
|
Hersteller: onsemi
Description: MOSFET N-CH 40V 80A D2PAK
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 80A (Tc)
Rds On (Max) @ Id, Vgs: 3.5mOhm @ 80A, 10V
Power Dissipation (Max): 94W (Tj)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-263 (D2Pak)
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 56 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2980 pF @ 25 V
Qualification: AEC-Q101
Description: MOSFET N-CH 40V 80A D2PAK
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 80A (Tc)
Rds On (Max) @ Id, Vgs: 3.5mOhm @ 80A, 10V
Power Dissipation (Max): 94W (Tj)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-263 (D2Pak)
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 56 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2980 pF @ 25 V
Qualification: AEC-Q101
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| FDB9409-F085 |
|
Hersteller: onsemi
Description: MOSFET N-CH 40V 80A D2PAK
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 80A (Tc)
Rds On (Max) @ Id, Vgs: 3.5mOhm @ 80A, 10V
Power Dissipation (Max): 94W (Tj)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-263 (D2Pak)
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 56 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2980 pF @ 25 V
Qualification: AEC-Q101
Description: MOSFET N-CH 40V 80A D2PAK
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 80A (Tc)
Rds On (Max) @ Id, Vgs: 3.5mOhm @ 80A, 10V
Power Dissipation (Max): 94W (Tj)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-263 (D2Pak)
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 56 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2980 pF @ 25 V
Qualification: AEC-Q101
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| LM393N |
|
Hersteller: onsemi
Description: IC COMPARATOR 2 DIFF 8DIP
Packaging: Tube
Package / Case: 8-DIP (0.300", 7.62mm)
Mounting Type: Through Hole
Number of Elements: 2
Type: Standard (General Purpose)
Operating Temperature: 0°C ~ 70°C
Voltage - Supply, Single/Dual (±): 2V ~ 36V, ±1V ~ 18V
Supplier Device Package: 8-DIP
Current - Quiescent (Max): 2.5mA
Voltage - Input Offset (Max): 5mV @ 5V
Current - Input Bias (Max): 0.25µA @ 5V
Current - Output (Typ): 18mA @ 5V
Description: IC COMPARATOR 2 DIFF 8DIP
Packaging: Tube
Package / Case: 8-DIP (0.300", 7.62mm)
Mounting Type: Through Hole
Number of Elements: 2
Type: Standard (General Purpose)
Operating Temperature: 0°C ~ 70°C
Voltage - Supply, Single/Dual (±): 2V ~ 36V, ±1V ~ 18V
Supplier Device Package: 8-DIP
Current - Quiescent (Max): 2.5mA
Voltage - Input Offset (Max): 5mV @ 5V
Current - Input Bias (Max): 0.25µA @ 5V
Current - Output (Typ): 18mA @ 5V
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| MPSA93 |
|
Hersteller: onsemi
Description: TRANS PNP 200V 0.5A TO92
Packaging: Bulk
Package / Case: TO-226-3, TO-92-3 Long Body
Mounting Type: Through Hole
Transistor Type: PNP
Operating Temperature: -55°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 400mV @ 2mA, 20mA
Current - Collector Cutoff (Max): 250nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 25 @ 30mA, 10V
Frequency - Transition: 50MHz
Supplier Device Package: TO-92 (TO-226)
Current - Collector (Ic) (Max): 500 mA
Voltage - Collector Emitter Breakdown (Max): 200 V
Power - Max: 625 mW
Description: TRANS PNP 200V 0.5A TO92
Packaging: Bulk
Package / Case: TO-226-3, TO-92-3 Long Body
Mounting Type: Through Hole
Transistor Type: PNP
Operating Temperature: -55°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 400mV @ 2mA, 20mA
Current - Collector Cutoff (Max): 250nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 25 @ 30mA, 10V
Frequency - Transition: 50MHz
Supplier Device Package: TO-92 (TO-226)
Current - Collector (Ic) (Max): 500 mA
Voltage - Collector Emitter Breakdown (Max): 200 V
Power - Max: 625 mW
auf Bestellung 77302 Stücke:
Lieferzeit 10-14 Tag (e)| Anzahl | Preis |
|---|---|
| 2597+ | 0.18 EUR |
| MPSA93 |
|
Hersteller: onsemi
Description: TRANS PNP 200V 0.5A TO92
Packaging: Bulk
Package / Case: TO-226-3, TO-92-3 Long Body
Mounting Type: Through Hole
Transistor Type: PNP
Operating Temperature: -55°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 400mV @ 2mA, 20mA
Current - Collector Cutoff (Max): 250nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 25 @ 30mA, 10V
Frequency - Transition: 50MHz
Supplier Device Package: TO-92 (TO-226)
Current - Collector (Ic) (Max): 500 mA
Voltage - Collector Emitter Breakdown (Max): 200 V
Power - Max: 625 mW
Description: TRANS PNP 200V 0.5A TO92
Packaging: Bulk
Package / Case: TO-226-3, TO-92-3 Long Body
Mounting Type: Through Hole
Transistor Type: PNP
Operating Temperature: -55°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 400mV @ 2mA, 20mA
Current - Collector Cutoff (Max): 250nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 25 @ 30mA, 10V
Frequency - Transition: 50MHz
Supplier Device Package: TO-92 (TO-226)
Current - Collector (Ic) (Max): 500 mA
Voltage - Collector Emitter Breakdown (Max): 200 V
Power - Max: 625 mW
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| NP1100SBT3G |
|
Hersteller: onsemi
Description: THYRISTOR 90V 80A DO214AA
Packaging: Bulk
Capacitance: 95pF
Package / Case: DO-214AA, SMB
Mounting Type: Surface Mount
Number of Elements: 1
Voltage - Breakover: 130V
Voltage - Off State: 90V
Voltage - On State: 4 V
Supplier Device Package: SMB
Current - Hold (Ih): 150 mA
Current - Peak Pulse (10/1000µs): 80 A
Description: THYRISTOR 90V 80A DO214AA
Packaging: Bulk
Capacitance: 95pF
Package / Case: DO-214AA, SMB
Mounting Type: Surface Mount
Number of Elements: 1
Voltage - Breakover: 130V
Voltage - Off State: 90V
Voltage - On State: 4 V
Supplier Device Package: SMB
Current - Hold (Ih): 150 mA
Current - Peak Pulse (10/1000µs): 80 A
auf Bestellung 7000 Stücke:
Lieferzeit 10-14 Tag (e)| Anzahl | Preis |
|---|---|
| 1268+ | 0.38 EUR |
| BTA08-800CW3LFG |
|
Hersteller: onsemi
Description: TRIAC 600V 8A TO220AB
Packaging: Bulk
Package / Case: TO-220-3
Mounting Type: Through Hole
Triac Type: Standard
Configuration: Single
Operating Temperature: -40°C ~ 125°C (TJ)
Current - Hold (Ih) (Max): 35 mA
Current - Gate Trigger (Igt) (Max): 35 mA
Current - Non Rep. Surge 50, 60Hz (Itsm): 90A @ 60Hz
Voltage - Gate Trigger (Vgt) (Max): 1.1 V
Supplier Device Package: TO-220AB
Current - On State (It (RMS)) (Max): 8 A
Voltage - Off State: 600 V
Description: TRIAC 600V 8A TO220AB
Packaging: Bulk
Package / Case: TO-220-3
Mounting Type: Through Hole
Triac Type: Standard
Configuration: Single
Operating Temperature: -40°C ~ 125°C (TJ)
Current - Hold (Ih) (Max): 35 mA
Current - Gate Trigger (Igt) (Max): 35 mA
Current - Non Rep. Surge 50, 60Hz (Itsm): 90A @ 60Hz
Voltage - Gate Trigger (Vgt) (Max): 1.1 V
Supplier Device Package: TO-220AB
Current - On State (It (RMS)) (Max): 8 A
Voltage - Off State: 600 V
auf Bestellung 12119 Stücke:
Lieferzeit 10-14 Tag (e)| Anzahl | Preis |
|---|---|
| 162+ | 2.79 EUR |
| 2SJ615-TD-E |
auf Bestellung 73000 Stücke:
Lieferzeit 10-14 Tag (e)| Anzahl | Preis |
|---|---|
| 1402+ | 0.34 EUR |
| EFC4K105NUZTDG |
|
Hersteller: onsemi
Description: MOSFET 2N-CH 22V 25A 10WLCSP
Packaging: Tape & Reel (TR)
Package / Case: 10-SMD, No Lead
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual) Common Drain
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 2.5W (Ta)
Drain to Source Voltage (Vdss): 22V
Current - Continuous Drain (Id) @ 25°C: 25A (Ta)
Rds On (Max) @ Id, Vgs: 3.55mOhm @ 5A, 4.5V
Gate Charge (Qg) (Max) @ Vgs: 43nC @ 3.8V
FET Feature: Logic Level Gate, 2.5V Drive
Vgs(th) (Max) @ Id: 1.3V @ 1mA
Supplier Device Package: 10-WLCSP (3.4x1.96)
Description: MOSFET 2N-CH 22V 25A 10WLCSP
Packaging: Tape & Reel (TR)
Package / Case: 10-SMD, No Lead
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual) Common Drain
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 2.5W (Ta)
Drain to Source Voltage (Vdss): 22V
Current - Continuous Drain (Id) @ 25°C: 25A (Ta)
Rds On (Max) @ Id, Vgs: 3.55mOhm @ 5A, 4.5V
Gate Charge (Qg) (Max) @ Vgs: 43nC @ 3.8V
FET Feature: Logic Level Gate, 2.5V Drive
Vgs(th) (Max) @ Id: 1.3V @ 1mA
Supplier Device Package: 10-WLCSP (3.4x1.96)
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| EFC4K105NUZTDG |
|
Hersteller: onsemi
Description: MOSFET 2N-CH 22V 25A 10WLCSP
Packaging: Cut Tape (CT)
Package / Case: 10-SMD, No Lead
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual) Common Drain
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 2.5W (Ta)
Drain to Source Voltage (Vdss): 22V
Current - Continuous Drain (Id) @ 25°C: 25A (Ta)
Rds On (Max) @ Id, Vgs: 3.55mOhm @ 5A, 4.5V
Gate Charge (Qg) (Max) @ Vgs: 43nC @ 3.8V
FET Feature: Logic Level Gate, 2.5V Drive
Vgs(th) (Max) @ Id: 1.3V @ 1mA
Supplier Device Package: 10-WLCSP (3.4x1.96)
Description: MOSFET 2N-CH 22V 25A 10WLCSP
Packaging: Cut Tape (CT)
Package / Case: 10-SMD, No Lead
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual) Common Drain
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 2.5W (Ta)
Drain to Source Voltage (Vdss): 22V
Current - Continuous Drain (Id) @ 25°C: 25A (Ta)
Rds On (Max) @ Id, Vgs: 3.55mOhm @ 5A, 4.5V
Gate Charge (Qg) (Max) @ Vgs: 43nC @ 3.8V
FET Feature: Logic Level Gate, 2.5V Drive
Vgs(th) (Max) @ Id: 1.3V @ 1mA
Supplier Device Package: 10-WLCSP (3.4x1.96)
auf Bestellung 4950 Stücke:
Lieferzeit 10-14 Tag (e)| Anzahl | Preis |
|---|---|
| 13+ | 1.37 EUR |
| 16+ | 1.12 EUR |
| 100+ | 0.87 EUR |
| 500+ | 0.74 EUR |
| 1000+ | 0.6 EUR |
| 2000+ | 0.57 EUR |
| EFC2K102NUZTDG |
Hersteller: onsemi
Description: MOSFET 2N-CH 12V 33A 10WLCSP
Packaging: Tape & Reel (TR)
Package / Case: 10-SMD, No Lead
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual) Common Drain
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 3.1W (Ta)
Drain to Source Voltage (Vdss): 12V
Current - Continuous Drain (Id) @ 25°C: 33A (Ta)
Rds On (Max) @ Id, Vgs: 2.65mOhm @ 5A, 4.5V
Gate Charge (Qg) (Max) @ Vgs: 42nC @ 3.8V
FET Feature: Logic Level Gate, 2.5V Drive
Vgs(th) (Max) @ Id: 1.3V @ 1mA
Supplier Device Package: 10-WLCSP (2.98x1.49)
Description: MOSFET 2N-CH 12V 33A 10WLCSP
Packaging: Tape & Reel (TR)
Package / Case: 10-SMD, No Lead
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual) Common Drain
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 3.1W (Ta)
Drain to Source Voltage (Vdss): 12V
Current - Continuous Drain (Id) @ 25°C: 33A (Ta)
Rds On (Max) @ Id, Vgs: 2.65mOhm @ 5A, 4.5V
Gate Charge (Qg) (Max) @ Vgs: 42nC @ 3.8V
FET Feature: Logic Level Gate, 2.5V Drive
Vgs(th) (Max) @ Id: 1.3V @ 1mA
Supplier Device Package: 10-WLCSP (2.98x1.49)
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| EFC2K102NUZTDG |
Hersteller: onsemi
Description: MOSFET 2N-CH 12V 33A 10WLCSP
Packaging: Cut Tape (CT)
Package / Case: 10-SMD, No Lead
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual) Common Drain
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 3.1W (Ta)
Drain to Source Voltage (Vdss): 12V
Current - Continuous Drain (Id) @ 25°C: 33A (Ta)
Rds On (Max) @ Id, Vgs: 2.65mOhm @ 5A, 4.5V
Gate Charge (Qg) (Max) @ Vgs: 42nC @ 3.8V
FET Feature: Logic Level Gate, 2.5V Drive
Vgs(th) (Max) @ Id: 1.3V @ 1mA
Supplier Device Package: 10-WLCSP (2.98x1.49)
Description: MOSFET 2N-CH 12V 33A 10WLCSP
Packaging: Cut Tape (CT)
Package / Case: 10-SMD, No Lead
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual) Common Drain
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 3.1W (Ta)
Drain to Source Voltage (Vdss): 12V
Current - Continuous Drain (Id) @ 25°C: 33A (Ta)
Rds On (Max) @ Id, Vgs: 2.65mOhm @ 5A, 4.5V
Gate Charge (Qg) (Max) @ Vgs: 42nC @ 3.8V
FET Feature: Logic Level Gate, 2.5V Drive
Vgs(th) (Max) @ Id: 1.3V @ 1mA
Supplier Device Package: 10-WLCSP (2.98x1.49)
auf Bestellung 4895 Stücke:
Lieferzeit 10-14 Tag (e)| Anzahl | Preis |
|---|---|
| 13+ | 1.44 EUR |
| 15+ | 1.18 EUR |
| 100+ | 0.92 EUR |
| 500+ | 0.78 EUR |
| 1000+ | 0.63 EUR |
| 2000+ | 0.6 EUR |
| NLSX3013BFCT1G |
Hersteller: onsemi
Description: IC TRANSLATOR BIDIR 20FLIPCHIP
Features: Auto-Direction Sensing
Packaging: Bulk
Package / Case: 20-WFBGA, FCBGA
Output Type: Tri-State, Non-Inverted
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 85°C (TA)
Data Rate: 100Mbps
Supplier Device Package: 20-FlipChip (2.54x2.03)
Channel Type: Bidirectional
Translator Type: Voltage Level
Channels per Circuit: 8
Voltage - VCCA: 0.9 V ~ 4.5 V
Voltage - VCCB: 1.3 V ~ 4.5 V
Number of Circuits: 1
Description: IC TRANSLATOR BIDIR 20FLIPCHIP
Features: Auto-Direction Sensing
Packaging: Bulk
Package / Case: 20-WFBGA, FCBGA
Output Type: Tri-State, Non-Inverted
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 85°C (TA)
Data Rate: 100Mbps
Supplier Device Package: 20-FlipChip (2.54x2.03)
Channel Type: Bidirectional
Translator Type: Voltage Level
Channels per Circuit: 8
Voltage - VCCA: 0.9 V ~ 4.5 V
Voltage - VCCB: 1.3 V ~ 4.5 V
Number of Circuits: 1
auf Bestellung 116964 Stücke:
Lieferzeit 10-14 Tag (e)| Anzahl | Preis |
|---|---|
| 119+ | 3.91 EUR |
| NLSX3013FCT1G |
Hersteller: onsemi
Description: IC TRANSLATOR BIDIR 20FLIPCHIP
Features: Auto-Direction Sensing
Packaging: Bulk
Package / Case: 20-WFBGA, FCBGA
Output Type: Tri-State, Non-Inverted
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 85°C (TA)
Data Rate: 100Mbps
Supplier Device Package: 20-FlipChip (2.54x2.03)
Channel Type: Bidirectional
Translator Type: Voltage Level
Channels per Circuit: 8
Voltage - VCCA: 0.9 V ~ 4.5 V
Voltage - VCCB: 1.3 V ~ 4.5 V
Number of Circuits: 1
Description: IC TRANSLATOR BIDIR 20FLIPCHIP
Features: Auto-Direction Sensing
Packaging: Bulk
Package / Case: 20-WFBGA, FCBGA
Output Type: Tri-State, Non-Inverted
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 85°C (TA)
Data Rate: 100Mbps
Supplier Device Package: 20-FlipChip (2.54x2.03)
Channel Type: Bidirectional
Translator Type: Voltage Level
Channels per Circuit: 8
Voltage - VCCA: 0.9 V ~ 4.5 V
Voltage - VCCB: 1.3 V ~ 4.5 V
Number of Circuits: 1
auf Bestellung 63275 Stücke:
Lieferzeit 10-14 Tag (e)| Anzahl | Preis |
|---|---|
| 119+ | 3.91 EUR |
| NTBG030N120M3S |
|
Hersteller: onsemi
Description: SILICON CARBIDE (SIC) MOSFET - E
Packaging: Tape & Reel (TR)
Package / Case: TO-263-8, D2PAK (7 Leads + Tab), TO-263CA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 77A (Tc)
Rds On (Max) @ Id, Vgs: 39mOhm @ 30A, 18V
Power Dissipation (Max): 348W (Tc)
Vgs(th) (Max) @ Id: 4.4V @ 15mA
Supplier Device Package: D2PAK-7
Drive Voltage (Max Rds On, Min Rds On): 18V
Vgs (Max): +22V, -10V
Drain to Source Voltage (Vdss): 1200 V
Gate Charge (Qg) (Max) @ Vgs: 107 nC @ 18 V
Input Capacitance (Ciss) (Max) @ Vds: 2430 pF @ 800 V
Description: SILICON CARBIDE (SIC) MOSFET - E
Packaging: Tape & Reel (TR)
Package / Case: TO-263-8, D2PAK (7 Leads + Tab), TO-263CA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 77A (Tc)
Rds On (Max) @ Id, Vgs: 39mOhm @ 30A, 18V
Power Dissipation (Max): 348W (Tc)
Vgs(th) (Max) @ Id: 4.4V @ 15mA
Supplier Device Package: D2PAK-7
Drive Voltage (Max Rds On, Min Rds On): 18V
Vgs (Max): +22V, -10V
Drain to Source Voltage (Vdss): 1200 V
Gate Charge (Qg) (Max) @ Vgs: 107 nC @ 18 V
Input Capacitance (Ciss) (Max) @ Vds: 2430 pF @ 800 V
auf Bestellung 25600 Stücke:
Lieferzeit 10-14 Tag (e)| Anzahl | Preis |
|---|---|
| 800+ | 8.97 EUR |
| NTBG030N120M3S |
|
Hersteller: onsemi
Description: SILICON CARBIDE (SIC) MOSFET - E
Packaging: Cut Tape (CT)
Package / Case: TO-263-8, D2PAK (7 Leads + Tab), TO-263CA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 77A (Tc)
Rds On (Max) @ Id, Vgs: 39mOhm @ 30A, 18V
Power Dissipation (Max): 348W (Tc)
Vgs(th) (Max) @ Id: 4.4V @ 15mA
Supplier Device Package: D2PAK-7
Drive Voltage (Max Rds On, Min Rds On): 18V
Vgs (Max): +22V, -10V
Drain to Source Voltage (Vdss): 1200 V
Gate Charge (Qg) (Max) @ Vgs: 107 nC @ 18 V
Input Capacitance (Ciss) (Max) @ Vds: 2430 pF @ 800 V
Description: SILICON CARBIDE (SIC) MOSFET - E
Packaging: Cut Tape (CT)
Package / Case: TO-263-8, D2PAK (7 Leads + Tab), TO-263CA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 77A (Tc)
Rds On (Max) @ Id, Vgs: 39mOhm @ 30A, 18V
Power Dissipation (Max): 348W (Tc)
Vgs(th) (Max) @ Id: 4.4V @ 15mA
Supplier Device Package: D2PAK-7
Drive Voltage (Max Rds On, Min Rds On): 18V
Vgs (Max): +22V, -10V
Drain to Source Voltage (Vdss): 1200 V
Gate Charge (Qg) (Max) @ Vgs: 107 nC @ 18 V
Input Capacitance (Ciss) (Max) @ Vds: 2430 pF @ 800 V
auf Bestellung 26084 Stücke:
Lieferzeit 10-14 Tag (e)| Anzahl | Preis |
|---|---|
| 1+ | 18.39 EUR |
| 10+ | 12.79 EUR |
| 100+ | 10.98 EUR |
| NTH4L030N120M3S |
|
Hersteller: onsemi
Description: SILICON CARBIDE (SIC) MOSFET EL
Packaging: Tube
Package / Case: TO-247-4
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 73A (Tc)
Rds On (Max) @ Id, Vgs: 39mOhm @ 30A, 18V
Power Dissipation (Max): 313W (Tc)
Vgs(th) (Max) @ Id: 4.4V @ 15mA
Supplier Device Package: TO-247-4L
Drive Voltage (Max Rds On, Min Rds On): 18V
Vgs (Max): +22V, -10V
Drain to Source Voltage (Vdss): 1200 V
Gate Charge (Qg) (Max) @ Vgs: 107 nC @ 18 V
Input Capacitance (Ciss) (Max) @ Vds: 2430 pF @ 800 V
Description: SILICON CARBIDE (SIC) MOSFET EL
Packaging: Tube
Package / Case: TO-247-4
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 73A (Tc)
Rds On (Max) @ Id, Vgs: 39mOhm @ 30A, 18V
Power Dissipation (Max): 313W (Tc)
Vgs(th) (Max) @ Id: 4.4V @ 15mA
Supplier Device Package: TO-247-4L
Drive Voltage (Max Rds On, Min Rds On): 18V
Vgs (Max): +22V, -10V
Drain to Source Voltage (Vdss): 1200 V
Gate Charge (Qg) (Max) @ Vgs: 107 nC @ 18 V
Input Capacitance (Ciss) (Max) @ Vds: 2430 pF @ 800 V
auf Bestellung 84 Stücke:
Lieferzeit 10-14 Tag (e)| Anzahl | Preis |
|---|---|
| 1+ | 20.57 EUR |
| 30+ | 12.48 EUR |
| NTHL030N120M3S |
|
Hersteller: onsemi
Description: SILICON CARBIDE (SIC) MOSFET EL
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 73A (Tc)
Rds On (Max) @ Id, Vgs: 39mOhm @ 30A, 18V
Power Dissipation (Max): 313W (Tc)
Vgs(th) (Max) @ Id: 4.4V @ 15mA
Supplier Device Package: TO-247-3
Drive Voltage (Max Rds On, Min Rds On): 18V
Vgs (Max): +22V, -10V
Drain to Source Voltage (Vdss): 1200 V
Gate Charge (Qg) (Max) @ Vgs: 107 nC @ 18 V
Input Capacitance (Ciss) (Max) @ Vds: 2430 pF @ 800 V
Description: SILICON CARBIDE (SIC) MOSFET EL
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 73A (Tc)
Rds On (Max) @ Id, Vgs: 39mOhm @ 30A, 18V
Power Dissipation (Max): 313W (Tc)
Vgs(th) (Max) @ Id: 4.4V @ 15mA
Supplier Device Package: TO-247-3
Drive Voltage (Max Rds On, Min Rds On): 18V
Vgs (Max): +22V, -10V
Drain to Source Voltage (Vdss): 1200 V
Gate Charge (Qg) (Max) @ Vgs: 107 nC @ 18 V
Input Capacitance (Ciss) (Max) @ Vds: 2430 pF @ 800 V
auf Bestellung 426 Stücke:
Lieferzeit 10-14 Tag (e)| Anzahl | Preis |
|---|---|
| 1+ | 19.08 EUR |
| 30+ | 11.51 EUR |
| 120+ | 9.85 EUR |
| NVBG030N120M3S |
|
Hersteller: onsemi
Description: SILICON CARBIDE (SIC) MOSFET - E
Packaging: Tape & Reel (TR)
Package / Case: TO-263-8, D2PAK (7 Leads + Tab), TO-263CA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 77A (Tc)
Rds On (Max) @ Id, Vgs: 39mOhm @ 30A, 18V
Power Dissipation (Max): 348W (Tc)
Vgs(th) (Max) @ Id: 4.4V @ 15mA
Supplier Device Package: D2PAK-7
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 18V
Vgs (Max): +22V, -10V
Drain to Source Voltage (Vdss): 1200 V
Gate Charge (Qg) (Max) @ Vgs: 107 nC @ 18 V
Input Capacitance (Ciss) (Max) @ Vds: 2430 pF @ 800 V
Qualification: AEC-Q101
Description: SILICON CARBIDE (SIC) MOSFET - E
Packaging: Tape & Reel (TR)
Package / Case: TO-263-8, D2PAK (7 Leads + Tab), TO-263CA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 77A (Tc)
Rds On (Max) @ Id, Vgs: 39mOhm @ 30A, 18V
Power Dissipation (Max): 348W (Tc)
Vgs(th) (Max) @ Id: 4.4V @ 15mA
Supplier Device Package: D2PAK-7
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 18V
Vgs (Max): +22V, -10V
Drain to Source Voltage (Vdss): 1200 V
Gate Charge (Qg) (Max) @ Vgs: 107 nC @ 18 V
Input Capacitance (Ciss) (Max) @ Vds: 2430 pF @ 800 V
Qualification: AEC-Q101
auf Bestellung 12800 Stücke:
Lieferzeit 10-14 Tag (e)| Anzahl | Preis |
|---|---|
| 800+ | 23.05 EUR |