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FGA30N65SMD | onsemi |
Description: IGBT FIELD STOP 650V 60A TO-3PNPackaging: Tube Package / Case: TO-3P-3, SC-65-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 175°C (TJ) Input Type: Standard Reverse Recovery Time (trr): 35 ns Vce(on) (Max) @ Vge, Ic: 2.5V @ 15V, 30A Supplier Device Package: TO-3PN IGBT Type: Field Stop Td (on/off) @ 25°C: 14ns/102ns Switching Energy: 716µJ (on), 208µJ (off) Test Condition: 400V, 30A, 6Ohm, 15V Gate Charge: 87 nC Current - Collector (Ic) (Max): 60 A Voltage - Collector Emitter Breakdown (Max): 650 V Current - Collector Pulsed (Icm): 90 A Power - Max: 300 W |
Produkt ist nicht verfügbar |
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LM431ACZX | onsemi |
Description: IC VREF SHUNT ADJ 2% TO92-3Packaging: Tape & Reel (TR) Tolerance: ±2% Package / Case: TO-226-3, TO-92-3 (TO-226AA) Formed Leads Temperature Coefficient: 50ppm/°C Typical Output Type: Adjustable Mounting Type: Through Hole Reference Type: Shunt Operating Temperature: -25°C ~ 85°C (TA) Supplier Device Package: TO-92-3 Voltage - Output (Min/Fixed): 2.5V Current - Cathode: 1 mA Current - Output: 100 mA Voltage - Output (Max): 36 V |
Produkt ist nicht verfügbar |
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LM431ACZX | onsemi |
Description: IC VREF SHUNT ADJ 2% TO92-3Packaging: Cut Tape (CT) Tolerance: ±2% Package / Case: TO-226-3, TO-92-3 (TO-226AA) Formed Leads Temperature Coefficient: 50ppm/°C Typical Output Type: Adjustable Mounting Type: Through Hole Reference Type: Shunt Operating Temperature: -25°C ~ 85°C (TA) Supplier Device Package: TO-92-3 Voltage - Output (Min/Fixed): 2.5V Current - Cathode: 1 mA Current - Output: 100 mA Voltage - Output (Max): 36 V |
Produkt ist nicht verfügbar |
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LM431ACZ | onsemi |
Description: IC VREF SHUNT ADJ 2% TO92-3Packaging: Bulk Tolerance: ±2% Package / Case: TO-226-3, TO-92-3 (TO-226AA) Temperature Coefficient: 50ppm/°C Typical Output Type: Adjustable Mounting Type: Through Hole Reference Type: Shunt Operating Temperature: -25°C ~ 85°C (TA) Supplier Device Package: TO-92-3 Voltage - Output (Min/Fixed): 2.5V Current - Cathode: 1 mA Current - Output: 100 mA Voltage - Output (Max): 36 V |
auf Bestellung 36448 Stücke: Lieferzeit 10-14 Tag (e) |
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NCP731ADN330R2G | onsemi |
Description: IC REG LINEAR 3.3V 150MA 8-MSOPPackaging: Tape & Reel (TR) Package / Case: 8-TSSOP, 8-MSOP (0.118", 3.00mm Width) Output Type: Fixed Mounting Type: Surface Mount Current - Output: 150mA Operating Temperature: 150°C (TJ) Output Configuration: Positive Current - Quiescent (Iq): 100 µA Voltage - Input (Max): 38V Number of Regulators: 1 Supplier Device Package: 8-MSOP Voltage - Output (Min/Fixed): 3.3V Control Features: Enable, Soft Start PSRR: 80dB ~ 48dB (10Hz ~ 1MHz) Voltage Dropout (Max): 0.48V @ 150mA Protection Features: Over Temperature, Short Circuit, Under Voltage Lockout (UVLO) |
auf Bestellung 42000 Stücke: Lieferzeit 10-14 Tag (e) |
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NCP731ADN330R2G | onsemi |
Description: IC REG LINEAR 3.3V 150MA 8-MSOPPackaging: Cut Tape (CT) Package / Case: 8-TSSOP, 8-MSOP (0.118", 3.00mm Width) Output Type: Fixed Mounting Type: Surface Mount Current - Output: 150mA Operating Temperature: 150°C (TJ) Output Configuration: Positive Current - Quiescent (Iq): 100 µA Voltage - Input (Max): 38V Number of Regulators: 1 Supplier Device Package: 8-MSOP Voltage - Output (Min/Fixed): 3.3V Control Features: Enable, Soft Start PSRR: 80dB ~ 48dB (10Hz ~ 1MHz) Voltage Dropout (Max): 0.48V @ 150mA Protection Features: Over Temperature, Short Circuit, Under Voltage Lockout (UVLO) |
auf Bestellung 44575 Stücke: Lieferzeit 10-14 Tag (e) |
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NCP731ADNADJR2G | onsemi |
Description: IC REG LIN POS ADJ 150MA 8-MSOPPackaging: Tape & Reel (TR) Package / Case: 8-TSSOP, 8-MSOP (0.118", 3.00mm Width) Output Type: Adjustable Mounting Type: Surface Mount Current - Output: 150mA Operating Temperature: 150°C (TJ) Output Configuration: Positive Current - Quiescent (Iq): 100 µA Voltage - Input (Max): 38V Number of Regulators: 1 Supplier Device Package: 8-MSOP Voltage - Output (Max): 35V Voltage - Output (Min/Fixed): 1.2V Control Features: Enable, Soft Start PSRR: 80dB ~ 48dB (10Hz ~ 1MHz) Voltage Dropout (Max): 0.48V @ 150mA Protection Features: Over Temperature, Short Circuit, Under Voltage Lockout (UVLO) |
auf Bestellung 21000 Stücke: Lieferzeit 10-14 Tag (e) |
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NCP731ADNADJR2G | onsemi |
Description: IC REG LIN POS ADJ 150MA 8-MSOPPackaging: Cut Tape (CT) Package / Case: 8-TSSOP, 8-MSOP (0.118", 3.00mm Width) Output Type: Adjustable Mounting Type: Surface Mount Current - Output: 150mA Operating Temperature: 150°C (TJ) Output Configuration: Positive Current - Quiescent (Iq): 100 µA Voltage - Input (Max): 38V Number of Regulators: 1 Supplier Device Package: 8-MSOP Voltage - Output (Max): 35V Voltage - Output (Min/Fixed): 1.2V Control Features: Enable, Soft Start PSRR: 80dB ~ 48dB (10Hz ~ 1MHz) Voltage Dropout (Max): 0.48V @ 150mA Protection Features: Over Temperature, Short Circuit, Under Voltage Lockout (UVLO) |
auf Bestellung 23089 Stücke: Lieferzeit 10-14 Tag (e) |
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DM74ALS08M | onsemi |
Description: IC GATE AND 4CH 2-INP 14SOICPackaging: Tube Package / Case: 14-SOIC (0.154", 3.90mm Width) Mounting Type: Surface Mount Logic Type: AND Gate Operating Temperature: 0°C ~ 70°C Voltage - Supply: 4.5V ~ 5.5V Current - Output High, Low: 400µA, 8mA Number of Inputs: 2 Supplier Device Package: 14-SOIC Input Logic Level - High: 2V Input Logic Level - Low: 0.8V Max Propagation Delay @ V, Max CL: 14ns @ 5V, 50pF Number of Circuits: 4 |
Produkt ist nicht verfügbar |
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DM74ALS08SJ | onsemi |
Description: IC GATE AND 4CH 2-INP 14SOPPackaging: Tube Package / Case: 14-SOIC (0.209", 5.30mm Width) Mounting Type: Surface Mount Logic Type: AND Gate Operating Temperature: 0°C ~ 70°C Voltage - Supply: 4.5V ~ 5.5V Current - Output High, Low: 400µA, 8mA Number of Inputs: 2 Supplier Device Package: 14-SOP Input Logic Level - High: 2V Input Logic Level - Low: 0.8V Max Propagation Delay @ V, Max CL: 14ns @ 5V, 50pF Number of Circuits: 4 |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
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DM74ALS08SJX | onsemi |
Description: IC GATE AND 4CH 2-INP 14SOPPackaging: Tape & Reel (TR) Package / Case: 14-SOIC (0.209", 5.30mm Width) Mounting Type: Surface Mount Logic Type: AND Gate Operating Temperature: 0°C ~ 70°C Voltage - Supply: 4.5V ~ 5.5V Current - Output High, Low: 400µA, 8mA Number of Inputs: 2 Supplier Device Package: 14-SOP Input Logic Level - High: 2V Input Logic Level - Low: 0.8V Max Propagation Delay @ V, Max CL: 14ns @ 5V, 50pF Number of Circuits: 4 |
Produkt ist nicht verfügbar |
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ADM1030ARQ-REEL7 | onsemi |
Description: IC SNSR TEMP/FAN PWM CTRL 16QSOPPackaging: Tape & Reel (TR) Package / Case: 16-SSOP (0.154", 3.90mm Width) Output Type: SMBus Mounting Type: Surface Mount Function: Fan Control, Temp Monitor Accuracy: ±1°C, ±1°C(Max) Operating Temperature: 0°C ~ 100°C Voltage - Supply: 3V ~ 5.5V Sensor Type: Internal and External Sensing Temperature: 0°C ~ 100°C, External Sensor Topology: ADC, Comparator, Multiplexer, Register Bank Output Alarm: Yes Output Fan: Yes Supplier Device Package: 16-QSOP |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
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ADM1030ARQ | onsemi |
Description: IC SNSR TEMP/FAN PWM CTRL 16QSOPPackaging: Tube Package / Case: 16-SSOP (0.154", 3.90mm Width) Output Type: SMBus Mounting Type: Surface Mount Function: Fan Control, Temp Monitor Accuracy: ±1°C, ±1°C(Max) Operating Temperature: 0°C ~ 100°C Voltage - Supply: 3V ~ 5.5V Sensor Type: Internal and External Sensing Temperature: 0°C ~ 100°C, External Sensor Topology: ADC, Comparator, Multiplexer, Register Bank Output Alarm: Yes Output Fan: Yes Supplier Device Package: 16-QSOP |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
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1N5365B | onsemi |
Description: DIODE ZENER 36V 5W AXIALPackaging: Bulk Tolerance: ±5% Package / Case: T-18, Axial Mounting Type: Through Hole Operating Temperature: -65°C ~ 200°C Voltage - Zener (Nom) (Vz): 36 V Impedance (Max) (Zzt): 11 Ohms Supplier Device Package: Axial Power - Max: 5 W Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 1 A Current - Reverse Leakage @ Vr: 500 nA @ 27.4 V |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
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UJ4C075060L8S | onsemi |
Description: 750V/60MO,SICFET,G4,TOLLPackaging: Tape & Reel (TR) Package / Case: 8-PowerSFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: SiCFET (Silicon Carbide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 27.8A (Tc) Rds On (Max) @ Id, Vgs: 74mOhm @ 20A, 12V Power Dissipation (Max): 155W (Tc) Vgs(th) (Max) @ Id: 6V @ 10mA Supplier Device Package: TOLL Drive Voltage (Max Rds On, Min Rds On): 12V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 750 V Gate Charge (Qg) (Max) @ Vgs: 37.8 nC @ 15 V Input Capacitance (Ciss) (Max) @ Vds: 1420 pF @ 400 V |
auf Bestellung 2000 Stücke: Lieferzeit 10-14 Tag (e) |
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UJ4C075060L8S | onsemi |
Description: 750V/60MO,SICFET,G4,TOLLPackaging: Cut Tape (CT) Package / Case: 8-PowerSFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: SiCFET (Silicon Carbide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 27.8A (Tc) Rds On (Max) @ Id, Vgs: 74mOhm @ 20A, 12V Power Dissipation (Max): 155W (Tc) Vgs(th) (Max) @ Id: 6V @ 10mA Supplier Device Package: TOLL Drive Voltage (Max Rds On, Min Rds On): 12V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 750 V Gate Charge (Qg) (Max) @ Vgs: 37.8 nC @ 15 V Input Capacitance (Ciss) (Max) @ Vds: 1420 pF @ 400 V |
auf Bestellung 2000 Stücke: Lieferzeit 10-14 Tag (e) |
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UJ4C075044L8S | onsemi |
Description: 750V/44MO,SICFET,G4,TOLLPackaging: Tape & Reel (TR) Package / Case: 8-PowerSFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: SiCFET (Silicon Carbide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 35.6A (Tc) Rds On (Max) @ Id, Vgs: 56mOhm @ 25A, 12V Power Dissipation (Max): 181W (Tc) Vgs(th) (Max) @ Id: 6V @ 10mA Supplier Device Package: TOLL Drive Voltage (Max Rds On, Min Rds On): 12V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 750 V Gate Charge (Qg) (Max) @ Vgs: 37.8 nC @ 15 V Input Capacitance (Ciss) (Max) @ Vds: 1400 pF @ 400 V |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
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UJ4C075044L8S | onsemi |
Description: 750V/44MO,SICFET,G4,TOLLPackaging: Cut Tape (CT) Package / Case: 8-PowerSFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: SiCFET (Silicon Carbide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 35.6A (Tc) Rds On (Max) @ Id, Vgs: 56mOhm @ 25A, 12V Power Dissipation (Max): 181W (Tc) Vgs(th) (Max) @ Id: 6V @ 10mA Supplier Device Package: TOLL Drive Voltage (Max Rds On, Min Rds On): 12V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 750 V Gate Charge (Qg) (Max) @ Vgs: 37.8 nC @ 15 V Input Capacitance (Ciss) (Max) @ Vds: 1400 pF @ 400 V |
auf Bestellung 1961 Stücke: Lieferzeit 10-14 Tag (e) |
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UG4SC075011K4S | onsemi |
Description: 750V/11MO,COMBO-FET,G4,TO247-4Packaging: Tube Package / Case: TO-247-4 Mounting Type: Through Hole Operating Temperature: -55°C ~ 175°C (TJ) Technology: SiCFET (Silicon Carbide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 104A (Tc) Rds On (Max) @ Id, Vgs: 14.2mOhm @ 60A, 12V Power Dissipation (Max): 357W (Tc) Vgs(th) (Max) @ Id: 6.7V @ 85mA Supplier Device Package: TO-247-4 Drive Voltage (Max Rds On, Min Rds On): 12V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 750 V Gate Charge (Qg) (Max) @ Vgs: 75 nC @ 15 V Input Capacitance (Ciss) (Max) @ Vds: 3245 pF @ 400 V |
auf Bestellung 4778 Stücke: Lieferzeit 10-14 Tag (e) |
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UG4SC075009K4S | onsemi |
Description: 750V/9MO,COMBO-FET,G4,TO247-4Packaging: Tube Package / Case: TO-247-4 Mounting Type: Through Hole Operating Temperature: -55°C ~ 175°C (TJ) Technology: SiCFET (Silicon Carbide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 106A (Tc) Rds On (Max) @ Id, Vgs: 11.5mOhm @ 70A, 12V Power Dissipation (Max): 375W (Tc) Vgs(th) (Max) @ Id: 6.7V @ 110mA Supplier Device Package: TO-247-4 Drive Voltage (Max Rds On, Min Rds On): 12V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 750 V Gate Charge (Qg) (Max) @ Vgs: 75 nC @ 15 V Input Capacitance (Ciss) (Max) @ Vds: 3340 pF @ 400 V |
Produkt ist nicht verfügbar |
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UG4SC075006K4S | onsemi |
Description: 750V/6MO,COMBO-FET,G4,TO247-4Packaging: Tube Package / Case: TO-247-4 Mounting Type: Through Hole Operating Temperature: -55°C ~ 175°C (TJ) Technology: SiCFET (Silicon Carbide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 120A (Tc) Rds On (Max) @ Id, Vgs: 7.5mOhm @ 80A, 12V Power Dissipation (Max): 714W (Tc) Vgs(th) (Max) @ Id: 3.7V @ 180mA Supplier Device Package: TO-247-4 Drive Voltage (Max Rds On, Min Rds On): 12V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 750 V Gate Charge (Qg) (Max) @ Vgs: 164 nC @ 15 V Input Capacitance (Ciss) (Max) @ Vds: 8374 pF @ 400 V |
Produkt ist nicht verfügbar |
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UJ4C075060L8SSB | onsemi |
Description: 750V/60MO,SICFET,G4,TOLLPackaging: Bulk Package / Case: 8-PowerSFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: SiCFET (Silicon Carbide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 27.8A (Tj) Rds On (Max) @ Id, Vgs: 74mOhm @ 20A, 12V Power Dissipation (Max): 155W (Tc) Vgs(th) (Max) @ Id: 6V @ 10mA Supplier Device Package: TOLL Drive Voltage (Max Rds On, Min Rds On): 12V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 750 V Gate Charge (Qg) (Max) @ Vgs: 37.8 nC @ 15 V Input Capacitance (Ciss) (Max) @ Vds: 1420 pF @ 400 V |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
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UJ4C075044L8SSB | onsemi |
Description: 750V/44MO,SICFET,G4,TOLLPackaging: Bulk Package / Case: 8-PowerSFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: SiCFET (Silicon Carbide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 35.6A (Tj) Rds On (Max) @ Id, Vgs: 56mOhm @ 25A, 12V Power Dissipation (Max): 181W (Tc) Vgs(th) (Max) @ Id: 6V @ 10mA Supplier Device Package: TOLL Drive Voltage (Max Rds On, Min Rds On): 12V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 750 V Gate Charge (Qg) (Max) @ Vgs: 37.8 nC @ 15 V Input Capacitance (Ciss) (Max) @ Vds: 1400 pF @ 400 V |
Produkt ist nicht verfügbar |
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UF4C120070B7SSB | onsemi |
Description: 1200V/70MO,SICFET,G4,TO263-7Packaging: Bulk Package / Case: TO-263-8, D2PAK (7 Leads + Tab), TO-263CA Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: SiCFET (Cascode SiCJFET) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 25.7A (Tj) Rds On (Max) @ Id, Vgs: 91mOhm @ 20A, 12V Power Dissipation (Max): 183W (Tc) Vgs(th) (Max) @ Id: 6V @ 10mA Supplier Device Package: D2PAK-7L Drive Voltage (Max Rds On, Min Rds On): 12V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 1200 V Gate Charge (Qg) (Max) @ Vgs: 37.8 nC @ 15 V Input Capacitance (Ciss) (Max) @ Vds: 1370 pF @ 800 V |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
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UJ4C075033L8SSB | onsemi |
Description: 750V/33MO,SICFET,G4,TOLLPackaging: Bulk Package / Case: 8-PowerSFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: SiCFET (Silicon Carbide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 44A (Tj) Rds On (Max) @ Id, Vgs: 41mOhm @ 230A, 12V Power Dissipation (Max): 205W (Tc) Vgs(th) (Max) @ Id: 6V @ 10mA Supplier Device Package: TOLL Drive Voltage (Max Rds On, Min Rds On): 12V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 750 V Gate Charge (Qg) (Max) @ Vgs: 37.8 nC @ 15 V Input Capacitance (Ciss) (Max) @ Vds: 1400 pF @ 400 V |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
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UJ4C075023L8SSB | onsemi |
Description: 750V/23MO,SICFET,G4,TOLLPackaging: Bulk Package / Case: 8-PowerSFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: SiCFET (Silicon Carbide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 64A (Tj) Rds On (Max) @ Id, Vgs: 29mOhm @ 40A, 12V Power Dissipation (Max): 278W (Tc) Vgs(th) (Max) @ Id: 6V @ 10mA Supplier Device Package: TOLL Drive Voltage (Max Rds On, Min Rds On): 12V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 750 V Gate Charge (Qg) (Max) @ Vgs: 37.8 nC @ 15 V Input Capacitance (Ciss) (Max) @ Vds: 1400 pF @ 400 V |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
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UF4C120053B7SSB | onsemi |
Description: 1200V/53MO,SICFET,G4,TO263-7Packaging: Bulk Package / Case: TO-263-8, D2PAK (7 Leads + Tab), TO-263CA Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: SiCFET (Cascode SiCJFET) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 34A (Tj) Rds On (Max) @ Id, Vgs: 67mOhm @ 20A, 12V Power Dissipation (Max): 250W (Tc) Vgs(th) (Max) @ Id: 6V @ 10mA Supplier Device Package: D2PAK-7L Drive Voltage (Max Rds On, Min Rds On): 12V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 1200 V Gate Charge (Qg) (Max) @ Vgs: 37.8 nC @ 15 V Input Capacitance (Ciss) (Max) @ Vds: 1370 pF @ 800 V |
Produkt ist nicht verfügbar |
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UF4SC120030B7SSB | onsemi |
Description: 1200V/30MO,SICFET,G4,TO263-7Packaging: Bulk Package / Case: TO-263-8, D2PAK (7 Leads + Tab), TO-263CA Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: SiCFET (Cascode SiCJFET) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 56A (Tj) Rds On (Max) @ Id, Vgs: 39mOhm @ 20A, 12V Power Dissipation (Max): 341W (Tc) Vgs(th) (Max) @ Id: 6V @ 10mA Supplier Device Package: D2PAK-7L Drive Voltage (Max Rds On, Min Rds On): 12V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 1200 V Gate Charge (Qg) (Max) @ Vgs: 37.8 nC @ 15 V Input Capacitance (Ciss) (Max) @ Vds: 1450 pF @ 800 V |
Produkt ist nicht verfügbar |
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UF4SC120023B7SSB | onsemi |
Description: 1200V/23MO,SICFET,G4,TO263-7Packaging: Bulk Package / Case: TO-263-8, D2PAK (7 Leads + Tab), TO-263CA Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: SiCFET (Cascode SiCJFET) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 72A (Tj) Rds On (Max) @ Id, Vgs: 30mOhm @ 40A, 12V Power Dissipation (Max): 385W (Tc) Vgs(th) (Max) @ Id: 6V @ 10mA Supplier Device Package: D2PAK-7L Drive Voltage (Max Rds On, Min Rds On): 12V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 1200 V Gate Charge (Qg) (Max) @ Vgs: 37.8 nC @ 15 V Input Capacitance (Ciss) (Max) @ Vds: 1430 pF @ 800 V |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
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UJ4SC075010L8SSB | onsemi |
Description: 750V/10MO,SICFET,G4,TOLLPackaging: Bulk Package / Case: 8-PowerSFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: SiCFET (Silicon Carbide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 106A (Tc) Rds On (Max) @ Id, Vgs: 14.2mOhm @ 60A, 12V Power Dissipation (Max): 556W (Tc) Vgs(th) (Max) @ Id: 5.5V @ 10mA Supplier Device Package: TOLL Drive Voltage (Max Rds On, Min Rds On): 12V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 750 V Gate Charge (Qg) (Max) @ Vgs: 75 nC @ 15 V Input Capacitance (Ciss) (Max) @ Vds: 3245 pF @ 400 V |
Produkt ist nicht verfügbar |
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UF4C120053B7SSR | onsemi |
Description: 1200V/53MO,SICFET,G4,TO263-7Packaging: Bulk Package / Case: TO-263-8, D2PAK (7 Leads + Tab), TO-263CA Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: SiCFET (Cascode SiCJFET) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 34A (Tj) Rds On (Max) @ Id, Vgs: 67mOhm @ 20A, 12V Power Dissipation (Max): 250W (Tc) Vgs(th) (Max) @ Id: 6V @ 10mA Supplier Device Package: D2PAK-7L Drive Voltage (Max Rds On, Min Rds On): 12V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 1200 V Gate Charge (Qg) (Max) @ Vgs: 37.8 nC @ 15 V Input Capacitance (Ciss) (Max) @ Vds: 1370 pF @ 800 V |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
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UF4C120070B7SSR | onsemi |
Description: 1200V/70MO,SICFET,G4,TO263-7Packaging: Bulk Package / Case: TO-263-8, D2PAK (7 Leads + Tab), TO-263CA Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: SiCFET (Cascode SiCJFET) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 25.7A (Tj) Rds On (Max) @ Id, Vgs: 91mOhm @ 20A, 12V Power Dissipation (Max): 183W (Tc) Vgs(th) (Max) @ Id: 6V @ 10mA Supplier Device Package: D2PAK-7L Drive Voltage (Max Rds On, Min Rds On): 12V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 1200 V Gate Charge (Qg) (Max) @ Vgs: 37.8 nC @ 15 V Input Capacitance (Ciss) (Max) @ Vds: 1370 pF @ 800 V |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
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UF4SC120030B7SSR | onsemi |
Description: 1200V/30MO,SICFET,G4,TO263-7Packaging: Bulk Package / Case: TO-263-8, D2PAK (7 Leads + Tab), TO-263CA Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: SiCFET (Cascode SiCJFET) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 56A (Tj) Rds On (Max) @ Id, Vgs: 39mOhm @ 20A, 12V Power Dissipation (Max): 341W (Tc) Vgs(th) (Max) @ Id: 6V @ 10mA Supplier Device Package: D2PAK-7L Drive Voltage (Max Rds On, Min Rds On): 12V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 1200 V Gate Charge (Qg) (Max) @ Vgs: 37.8 nC @ 15 V Input Capacitance (Ciss) (Max) @ Vds: 1450 pF @ 800 V |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
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UJ4C075023L8SSR | onsemi |
Description: 750V/23MO,SICFET,G4,TOLLPackaging: Bulk Package / Case: 8-PowerSFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: SiCFET (Silicon Carbide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 64A (Tj) Rds On (Max) @ Id, Vgs: 29mOhm @ 40A, 12V Power Dissipation (Max): 278W (Tc) Vgs(th) (Max) @ Id: 6V @ 10mA Supplier Device Package: TOLL Drive Voltage (Max Rds On, Min Rds On): 12V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 750 V Gate Charge (Qg) (Max) @ Vgs: 37.8 nC @ 15 V Input Capacitance (Ciss) (Max) @ Vds: 1400 pF @ 400 V |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
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UJ4C075033L8SSR | onsemi |
Description: 750V/33MO,SICFET,G4,TOLLPackaging: Bulk Package / Case: 8-PowerSFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: SiCFET (Silicon Carbide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 44A (Tj) Rds On (Max) @ Id, Vgs: 41mOhm @ 230A, 12V Power Dissipation (Max): 205W (Tc) Vgs(th) (Max) @ Id: 6V @ 10mA Supplier Device Package: TOLL Drive Voltage (Max Rds On, Min Rds On): 12V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 750 V Gate Charge (Qg) (Max) @ Vgs: 37.8 nC @ 15 V Input Capacitance (Ciss) (Max) @ Vds: 1400 pF @ 400 V |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
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UJ4C075044L8SSR | onsemi |
Description: 750V/44MO,SICFET,G4,TOLLPackaging: Bulk Package / Case: 8-PowerSFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: SiCFET (Silicon Carbide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 35.6A (Tj) Rds On (Max) @ Id, Vgs: 56mOhm @ 25A, 12V Power Dissipation (Max): 181W (Tc) Vgs(th) (Max) @ Id: 6V @ 10mA Supplier Device Package: TOLL Drive Voltage (Max Rds On, Min Rds On): 12V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 750 V Gate Charge (Qg) (Max) @ Vgs: 37.8 nC @ 15 V Input Capacitance (Ciss) (Max) @ Vds: 1400 pF @ 400 V |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
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UJ4C075060L8SSR | onsemi |
Description: 750V/60MO,SICFET,G4,TOLLPackaging: Bulk Package / Case: 8-PowerSFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: SiCFET (Silicon Carbide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 27.8A (Tj) Rds On (Max) @ Id, Vgs: 74mOhm @ 20A, 12V Power Dissipation (Max): 155W (Tc) Vgs(th) (Max) @ Id: 6V @ 10mA Supplier Device Package: TOLL Drive Voltage (Max Rds On, Min Rds On): 12V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 750 V Gate Charge (Qg) (Max) @ Vgs: 37.8 nC @ 15 V Input Capacitance (Ciss) (Max) @ Vds: 1420 pF @ 400 V |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
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UJ4SC075010L8SSR | onsemi |
Description: 750V/10MO,SICFET,G4,TOLLPackaging: Bulk Package / Case: 8-PowerSFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: SiCFET (Cascode SiCJFET) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 106A (Tc) Rds On (Max) @ Id, Vgs: 14.2mOhm @ 60A, 12V Power Dissipation (Max): 556W (Tc) Vgs(th) (Max) @ Id: 5.5V @ 10mA Supplier Device Package: TOLL Drive Voltage (Max Rds On, Min Rds On): 12V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 750 V Gate Charge (Qg) (Max) @ Vgs: 75 nC @ 15 V Input Capacitance (Ciss) (Max) @ Vds: 3245 pF @ 400 V |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
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D45H11 | onsemi |
Description: TRANS PNP 80V 10A TO-220Packaging: Tube Package / Case: TO-220-3 Mounting Type: Through Hole Transistor Type: PNP Operating Temperature: -55°C ~ 150°C (TJ) Vce Saturation (Max) @ Ib, Ic: 1V @ 400mA, 8A Current - Collector Cutoff (Max): 10µA DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 4A, 1V Frequency - Transition: 40MHz Supplier Device Package: TO-220 Current - Collector (Ic) (Max): 10 A Voltage - Collector Emitter Breakdown (Max): 80 V Power - Max: 2 W |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
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D45H11 | onsemi |
Description: TRANS PNP 80V 10A TO-220Packaging: Tube Package / Case: TO-220-3 Mounting Type: Through Hole Transistor Type: PNP Operating Temperature: -55°C ~ 150°C (TJ) Vce Saturation (Max) @ Ib, Ic: 1V @ 400mA, 8A Current - Collector Cutoff (Max): 10µA DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 4A, 1V Frequency - Transition: 40MHz Supplier Device Package: TO-220 Current - Collector (Ic) (Max): 10 A Voltage - Collector Emitter Breakdown (Max): 80 V Power - Max: 2 W |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
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CEM102 | onsemi |
Description: CGM ASSP CHICOPEE G0A07UN-J0XH-SPackaging: Tape & Reel (TR) Package / Case: 25-XFBGA, WLCSP Mounting Type: Surface Mount Voltage - Supply, Analog: 2.375V ~ 3.63V Voltage - Supply, Digital: 2.375V ~ 3.63V Supplier Device Package: 25-WLCSP (1.88x1.85) Number of Channels: 2 |
auf Bestellung 5000 Stücke: Lieferzeit 10-14 Tag (e) |
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CEM102 | onsemi |
Description: CGM ASSP CHICOPEE G0A07UN-J0XH-SPackaging: Cut Tape (CT) Package / Case: 25-XFBGA, WLCSP Mounting Type: Surface Mount Voltage - Supply, Analog: 2.375V ~ 3.63V Voltage - Supply, Digital: 2.375V ~ 3.63V Supplier Device Package: 25-WLCSP (1.88x1.85) Number of Channels: 2 |
auf Bestellung 9785 Stücke: Lieferzeit 10-14 Tag (e) |
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FCPF11N60NT | onsemi |
Description: MOSFET N-CH 600V 10.8A TO220FPackaging: Tube Package / Case: TO-220-3 Full Pack Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 10.8A (Tc) Rds On (Max) @ Id, Vgs: 299mOhm @ 5.4A, 10V Power Dissipation (Max): 32.1W (Tc) Vgs(th) (Max) @ Id: 4V @ 250µA Supplier Device Package: TO-220F-3 Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±30V Drain to Source Voltage (Vdss): 600 V Gate Charge (Qg) (Max) @ Vgs: 35.6 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1505 pF @ 100 V |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
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NGTB20N135IHRWG | onsemi |
Description: IGBT TRENCH FS 1350V 40A TO-247Packaging: Bulk Package / Case: TO-247-3 Mounting Type: Through Hole Operating Temperature: -40°C ~ 175°C (TJ) Input Type: Standard Vce(on) (Max) @ Vge, Ic: 2.65V @ 15V, 20A Supplier Device Package: TO-247 IGBT Type: Trench Field Stop Td (on/off) @ 25°C: -/245ns Switching Energy: 600µJ (off) Test Condition: 600V, 20A, 10Ohm, 15V Gate Charge: 234 nC Current - Collector (Ic) (Max): 40 A Voltage - Collector Emitter Breakdown (Max): 1350 V Current - Collector Pulsed (Icm): 120 A Power - Max: 394 W |
auf Bestellung 82981 Stücke: Lieferzeit 10-14 Tag (e) |
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1N4741A | onsemi |
Description: DIODE ZENER 11V 1W DO41Tolerance: ±5% Packaging: Bulk Package / Case: DO-204AL, DO-41, Axial Mounting Type: Through Hole Operating Temperature: -65°C ~ 200°C Voltage - Zener (Nom) (Vz): 11 V Impedance (Max) (Zzt): 8 Ohms Supplier Device Package: DO-41 Power - Max: 1 W Current - Reverse Leakage @ Vr: 5 µA @ 8.4 V |
auf Bestellung 6035 Stücke: Lieferzeit 10-14 Tag (e) |
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1N5395 | onsemi |
Description: DIODE STANDARD 400V 1.5A DO15Packaging: Tape & Reel (TR) Package / Case: DO-204AC, DO-15, Axial Mounting Type: Through Hole Speed: Standard Recovery >500ns, > 200mA (Io) Technology: Standard Capacitance @ Vr, F: 25pF @ 4V, 1MHz Current - Average Rectified (Io): 1.5A Supplier Device Package: DO-15 Operating Temperature - Junction: -55°C ~ 150°C Voltage - DC Reverse (Vr) (Max): 400 V Voltage - Forward (Vf) (Max) @ If: 1.4 V @ 1.5 A Current - Reverse Leakage @ Vr: 5 µA @ 400 V |
Produkt ist nicht verfügbar |
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BZX55C4V3 | onsemi |
Description: DIODE ZENER 4.3V 500MW DO35Packaging: Bulk Tolerance: ±7% Package / Case: DO-204AH, DO-35, Axial Mounting Type: Through Hole Operating Temperature: -65°C ~ 200°C Voltage - Zener (Nom) (Vz): 4.3 V Impedance (Max) (Zzt): 75 Ohms Supplier Device Package: DO-35 Power - Max: 500 mW Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 100 mA Current - Reverse Leakage @ Vr: 1 µA @ 1 V |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
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N25S830HAT22I | onsemi |
Description: IC SRAM 256KBIT SPI 20MHZ 8TSSOPPackaging: Bulk Package / Case: 8-TSSOP (0.173", 4.40mm Width) Mounting Type: Surface Mount Memory Size: 256Kbit Memory Type: Volatile Operating Temperature: -40°C ~ 85°C (TA) Voltage - Supply: 2.7V ~ 3.6V Technology: SRAM Clock Frequency: 20 MHz Memory Format: SRAM Supplier Device Package: 8-TSSOP Memory Interface: SPI Memory Organization: 32K x 8 DigiKey Programmable: Not Verified |
auf Bestellung 2505 Stücke: Lieferzeit 10-14 Tag (e) |
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1N5339B | onsemi |
Description: DIODE ZENER 5.6V 5W AXIALPackaging: Bulk Tolerance: ±5% Package / Case: T-18, Axial Mounting Type: Through Hole Operating Temperature: -65°C ~ 200°C Voltage - Zener (Nom) (Vz): 5.6 V Impedance (Max) (Zzt): 1 Ohms Supplier Device Package: Axial Power - Max: 5 W Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 1 A Current - Reverse Leakage @ Vr: 1 µA @ 2 V |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
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MC14042BDR2G | onsemi |
Description: IC D-TYPE TRANSP 1:1 16-SOICPackaging: Tape & Reel (TR) Package / Case: 16-SOIC (0.154", 3.90mm Width) Output Type: Differential Mounting Type: Surface Mount Circuit: 1:1 Logic Type: D-Type Transparent Latch Operating Temperature: -55°C ~ 125°C Voltage - Supply: 3V ~ 18V Independent Circuits: 4 Current - Output High, Low: 8.8mA, 8.8mA Delay Time - Propagation: 60ns Supplier Device Package: 16-SOIC |
auf Bestellung 7500 Stücke: Lieferzeit 10-14 Tag (e) |
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MC14042BDR2G | onsemi |
Description: IC D-TYPE TRANSP 1:1 16-SOICPackaging: Cut Tape (CT) Package / Case: 16-SOIC (0.154", 3.90mm Width) Output Type: Differential Mounting Type: Surface Mount Circuit: 1:1 Logic Type: D-Type Transparent Latch Operating Temperature: -55°C ~ 125°C Voltage - Supply: 3V ~ 18V Independent Circuits: 4 Current - Output High, Low: 8.8mA, 8.8mA Delay Time - Propagation: 60ns Supplier Device Package: 16-SOIC |
auf Bestellung 9894 Stücke: Lieferzeit 10-14 Tag (e) |
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MC14532BDR2G | onsemi |
Description: IC PRIORITY ENCODER 1X8:3 16SOICPackaging: Tape & Reel (TR) Package / Case: 16-SOIC (0.154", 3.90mm Width) Mounting Type: Surface Mount Circuit: 1 x 8:3 Type: Priority Encoder Operating Temperature: -55°C ~ 125°C Voltage - Supply: 3V ~ 18V Independent Circuits: 1 Current - Output High, Low: 8.8mA, 8.8mA Voltage Supply Source: Dual Supply Supplier Device Package: 16-SOIC |
Produkt ist nicht verfügbar |
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MC14532BDR2G | onsemi |
Description: IC PRIORITY ENCODER 1X8:3 16SOICPackaging: Cut Tape (CT) Package / Case: 16-SOIC (0.154", 3.90mm Width) Mounting Type: Surface Mount Circuit: 1 x 8:3 Type: Priority Encoder Operating Temperature: -55°C ~ 125°C Voltage - Supply: 3V ~ 18V Independent Circuits: 1 Current - Output High, Low: 8.8mA, 8.8mA Voltage Supply Source: Dual Supply Supplier Device Package: 16-SOIC |
auf Bestellung 2150 Stücke: Lieferzeit 10-14 Tag (e) |
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MC14022BDR2G | onsemi |
Description: IC BINARY COUNTER 4-BIT 16SOICPackaging: Tape & Reel (TR) Package / Case: 16-SOIC (0.154", 3.90mm Width) Mounting Type: Surface Mount Number of Elements: 1 Logic Type: Binary Counter Reset: Asynchronous Operating Temperature: -55°C ~ 125°C Direction: Up Trigger Type: Positive Edge Supplier Device Package: 16-SOIC Voltage - Supply: 3 V ~ 18 V Count Rate: 16 MHz Number of Bits per Element: 4 |
auf Bestellung 2500 Stücke: Lieferzeit 10-14 Tag (e) |
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MC14022BDR2G | onsemi |
Description: IC BINARY COUNTER 4-BIT 16SOICPackaging: Cut Tape (CT) Package / Case: 16-SOIC (0.154", 3.90mm Width) Mounting Type: Surface Mount Number of Elements: 1 Logic Type: Binary Counter Reset: Asynchronous Operating Temperature: -55°C ~ 125°C Direction: Up Trigger Type: Positive Edge Supplier Device Package: 16-SOIC Voltage - Supply: 3 V ~ 18 V Count Rate: 16 MHz Number of Bits per Element: 4 |
auf Bestellung 4386 Stücke: Lieferzeit 10-14 Tag (e) |
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MC14517BDWR2G | onsemi |
Description: IC SR TRI-STATE 64BIT 16-SOICPackaging: Tape & Reel (TR) Package / Case: 16-SOIC (0.295", 7.50mm Width) Output Type: Tri-State Mounting Type: Surface Mount Number of Elements: 2 Function: Serial to Parallel Logic Type: Shift Register Operating Temperature: -55°C ~ 125°C Voltage - Supply: 3V ~ 18V Supplier Device Package: 16-SOIC Number of Bits per Element: 64 |
auf Bestellung 3000 Stücke: Lieferzeit 10-14 Tag (e) |
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MC14517BDWR2G | onsemi |
Description: IC SR TRI-STATE 64BIT 16-SOICPackaging: Cut Tape (CT) Package / Case: 16-SOIC (0.295", 7.50mm Width) Output Type: Tri-State Mounting Type: Surface Mount Number of Elements: 2 Function: Serial to Parallel Logic Type: Shift Register Operating Temperature: -55°C ~ 125°C Voltage - Supply: 3V ~ 18V Supplier Device Package: 16-SOIC Number of Bits per Element: 64 |
auf Bestellung 4537 Stücke: Lieferzeit 10-14 Tag (e) |
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GBPC2510W | onsemi |
Description: BRIDGE RECT 1P 1KV 25A GBPC-WPackaging: Bulk Package / Case: 4-Square, GBPC-W Mounting Type: Through Hole Diode Type: Single Phase Operating Temperature: -55°C ~ 150°C (TJ) Technology: Standard Supplier Device Package: GBPC-W Voltage - Peak Reverse (Max): 1 kV Current - Average Rectified (Io): 25 A Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 12.5 A Current - Reverse Leakage @ Vr: 5 µA @ 1000 V |
auf Bestellung 100 Stücke: Lieferzeit 10-14 Tag (e) |
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FSB560 | onsemi |
Description: TRANS NPN 60V 2A SOT-23-3Packaging: Bulk Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Transistor Type: NPN Operating Temperature: -55°C ~ 150°C (TJ) Vce Saturation (Max) @ Ib, Ic: 350mV @ 200mA, 2A Current - Collector Cutoff (Max): 100nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 500mA, 2V Frequency - Transition: 75MHz Supplier Device Package: SOT-23-3 Current - Collector (Ic) (Max): 2 A Voltage - Collector Emitter Breakdown (Max): 60 V Power - Max: 500 mW |
auf Bestellung 30116 Stücke: Lieferzeit 10-14 Tag (e) |
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NSVMUN5333DW1T3G | onsemi |
Description: TRANS PREBIAS 1NPN 1PNP SOT-363Packaging: Tape & Reel (TR) Package / Case: 6-TSSOP, SC-88, SOT-363 Mounting Type: Surface Mount Transistor Type: 1 NPN, 1 PNP - Pre-Biased (Dual) Power - Max: 250mW Current - Collector (Ic) (Max): 100mA Voltage - Collector Emitter Breakdown (Max): 50V Vce Saturation (Max) @ Ib, Ic: 250mV @ 1mA, 10mA Current - Collector Cutoff (Max): 500nA DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 5mA, 10V Resistor - Base (R1): 4.7kOhms Resistor - Emitter Base (R2): 47kOhms Supplier Device Package: SC-88/SC70-6/SOT-363 Grade: Automotive Qualification: AEC-Q101 |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH |
| FGA30N65SMD |
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Hersteller: onsemi
Description: IGBT FIELD STOP 650V 60A TO-3PN
Packaging: Tube
Package / Case: TO-3P-3, SC-65-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 35 ns
Vce(on) (Max) @ Vge, Ic: 2.5V @ 15V, 30A
Supplier Device Package: TO-3PN
IGBT Type: Field Stop
Td (on/off) @ 25°C: 14ns/102ns
Switching Energy: 716µJ (on), 208µJ (off)
Test Condition: 400V, 30A, 6Ohm, 15V
Gate Charge: 87 nC
Current - Collector (Ic) (Max): 60 A
Voltage - Collector Emitter Breakdown (Max): 650 V
Current - Collector Pulsed (Icm): 90 A
Power - Max: 300 W
Description: IGBT FIELD STOP 650V 60A TO-3PN
Packaging: Tube
Package / Case: TO-3P-3, SC-65-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 35 ns
Vce(on) (Max) @ Vge, Ic: 2.5V @ 15V, 30A
Supplier Device Package: TO-3PN
IGBT Type: Field Stop
Td (on/off) @ 25°C: 14ns/102ns
Switching Energy: 716µJ (on), 208µJ (off)
Test Condition: 400V, 30A, 6Ohm, 15V
Gate Charge: 87 nC
Current - Collector (Ic) (Max): 60 A
Voltage - Collector Emitter Breakdown (Max): 650 V
Current - Collector Pulsed (Icm): 90 A
Power - Max: 300 W
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| LM431ACZX |
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Hersteller: onsemi
Description: IC VREF SHUNT ADJ 2% TO92-3
Packaging: Tape & Reel (TR)
Tolerance: ±2%
Package / Case: TO-226-3, TO-92-3 (TO-226AA) Formed Leads
Temperature Coefficient: 50ppm/°C Typical
Output Type: Adjustable
Mounting Type: Through Hole
Reference Type: Shunt
Operating Temperature: -25°C ~ 85°C (TA)
Supplier Device Package: TO-92-3
Voltage - Output (Min/Fixed): 2.5V
Current - Cathode: 1 mA
Current - Output: 100 mA
Voltage - Output (Max): 36 V
Description: IC VREF SHUNT ADJ 2% TO92-3
Packaging: Tape & Reel (TR)
Tolerance: ±2%
Package / Case: TO-226-3, TO-92-3 (TO-226AA) Formed Leads
Temperature Coefficient: 50ppm/°C Typical
Output Type: Adjustable
Mounting Type: Through Hole
Reference Type: Shunt
Operating Temperature: -25°C ~ 85°C (TA)
Supplier Device Package: TO-92-3
Voltage - Output (Min/Fixed): 2.5V
Current - Cathode: 1 mA
Current - Output: 100 mA
Voltage - Output (Max): 36 V
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| LM431ACZX |
![]() |
Hersteller: onsemi
Description: IC VREF SHUNT ADJ 2% TO92-3
Packaging: Cut Tape (CT)
Tolerance: ±2%
Package / Case: TO-226-3, TO-92-3 (TO-226AA) Formed Leads
Temperature Coefficient: 50ppm/°C Typical
Output Type: Adjustable
Mounting Type: Through Hole
Reference Type: Shunt
Operating Temperature: -25°C ~ 85°C (TA)
Supplier Device Package: TO-92-3
Voltage - Output (Min/Fixed): 2.5V
Current - Cathode: 1 mA
Current - Output: 100 mA
Voltage - Output (Max): 36 V
Description: IC VREF SHUNT ADJ 2% TO92-3
Packaging: Cut Tape (CT)
Tolerance: ±2%
Package / Case: TO-226-3, TO-92-3 (TO-226AA) Formed Leads
Temperature Coefficient: 50ppm/°C Typical
Output Type: Adjustable
Mounting Type: Through Hole
Reference Type: Shunt
Operating Temperature: -25°C ~ 85°C (TA)
Supplier Device Package: TO-92-3
Voltage - Output (Min/Fixed): 2.5V
Current - Cathode: 1 mA
Current - Output: 100 mA
Voltage - Output (Max): 36 V
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| LM431ACZ |
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Hersteller: onsemi
Description: IC VREF SHUNT ADJ 2% TO92-3
Packaging: Bulk
Tolerance: ±2%
Package / Case: TO-226-3, TO-92-3 (TO-226AA)
Temperature Coefficient: 50ppm/°C Typical
Output Type: Adjustable
Mounting Type: Through Hole
Reference Type: Shunt
Operating Temperature: -25°C ~ 85°C (TA)
Supplier Device Package: TO-92-3
Voltage - Output (Min/Fixed): 2.5V
Current - Cathode: 1 mA
Current - Output: 100 mA
Voltage - Output (Max): 36 V
Description: IC VREF SHUNT ADJ 2% TO92-3
Packaging: Bulk
Tolerance: ±2%
Package / Case: TO-226-3, TO-92-3 (TO-226AA)
Temperature Coefficient: 50ppm/°C Typical
Output Type: Adjustable
Mounting Type: Through Hole
Reference Type: Shunt
Operating Temperature: -25°C ~ 85°C (TA)
Supplier Device Package: TO-92-3
Voltage - Output (Min/Fixed): 2.5V
Current - Cathode: 1 mA
Current - Output: 100 mA
Voltage - Output (Max): 36 V
auf Bestellung 36448 Stücke:
Lieferzeit 10-14 Tag (e)| Anzahl | Preis |
|---|---|
| 2697+ | 0.17 EUR |
| NCP731ADN330R2G |
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Hersteller: onsemi
Description: IC REG LINEAR 3.3V 150MA 8-MSOP
Packaging: Tape & Reel (TR)
Package / Case: 8-TSSOP, 8-MSOP (0.118", 3.00mm Width)
Output Type: Fixed
Mounting Type: Surface Mount
Current - Output: 150mA
Operating Temperature: 150°C (TJ)
Output Configuration: Positive
Current - Quiescent (Iq): 100 µA
Voltage - Input (Max): 38V
Number of Regulators: 1
Supplier Device Package: 8-MSOP
Voltage - Output (Min/Fixed): 3.3V
Control Features: Enable, Soft Start
PSRR: 80dB ~ 48dB (10Hz ~ 1MHz)
Voltage Dropout (Max): 0.48V @ 150mA
Protection Features: Over Temperature, Short Circuit, Under Voltage Lockout (UVLO)
Description: IC REG LINEAR 3.3V 150MA 8-MSOP
Packaging: Tape & Reel (TR)
Package / Case: 8-TSSOP, 8-MSOP (0.118", 3.00mm Width)
Output Type: Fixed
Mounting Type: Surface Mount
Current - Output: 150mA
Operating Temperature: 150°C (TJ)
Output Configuration: Positive
Current - Quiescent (Iq): 100 µA
Voltage - Input (Max): 38V
Number of Regulators: 1
Supplier Device Package: 8-MSOP
Voltage - Output (Min/Fixed): 3.3V
Control Features: Enable, Soft Start
PSRR: 80dB ~ 48dB (10Hz ~ 1MHz)
Voltage Dropout (Max): 0.48V @ 150mA
Protection Features: Over Temperature, Short Circuit, Under Voltage Lockout (UVLO)
auf Bestellung 42000 Stücke:
Lieferzeit 10-14 Tag (e)| Anzahl | Preis |
|---|---|
| 3000+ | 1.22 EUR |
| 6000+ | 1.19 EUR |
| 9000+ | 1.18 EUR |
| NCP731ADN330R2G |
![]() |
Hersteller: onsemi
Description: IC REG LINEAR 3.3V 150MA 8-MSOP
Packaging: Cut Tape (CT)
Package / Case: 8-TSSOP, 8-MSOP (0.118", 3.00mm Width)
Output Type: Fixed
Mounting Type: Surface Mount
Current - Output: 150mA
Operating Temperature: 150°C (TJ)
Output Configuration: Positive
Current - Quiescent (Iq): 100 µA
Voltage - Input (Max): 38V
Number of Regulators: 1
Supplier Device Package: 8-MSOP
Voltage - Output (Min/Fixed): 3.3V
Control Features: Enable, Soft Start
PSRR: 80dB ~ 48dB (10Hz ~ 1MHz)
Voltage Dropout (Max): 0.48V @ 150mA
Protection Features: Over Temperature, Short Circuit, Under Voltage Lockout (UVLO)
Description: IC REG LINEAR 3.3V 150MA 8-MSOP
Packaging: Cut Tape (CT)
Package / Case: 8-TSSOP, 8-MSOP (0.118", 3.00mm Width)
Output Type: Fixed
Mounting Type: Surface Mount
Current - Output: 150mA
Operating Temperature: 150°C (TJ)
Output Configuration: Positive
Current - Quiescent (Iq): 100 µA
Voltage - Input (Max): 38V
Number of Regulators: 1
Supplier Device Package: 8-MSOP
Voltage - Output (Min/Fixed): 3.3V
Control Features: Enable, Soft Start
PSRR: 80dB ~ 48dB (10Hz ~ 1MHz)
Voltage Dropout (Max): 0.48V @ 150mA
Protection Features: Over Temperature, Short Circuit, Under Voltage Lockout (UVLO)
auf Bestellung 44575 Stücke:
Lieferzeit 10-14 Tag (e)| Anzahl | Preis |
|---|---|
| 8+ | 2.46 EUR |
| 10+ | 1.8 EUR |
| 25+ | 1.64 EUR |
| 100+ | 1.45 EUR |
| 250+ | 1.37 EUR |
| 500+ | 1.32 EUR |
| 1000+ | 1.27 EUR |
| NCP731ADNADJR2G |
![]() |
Hersteller: onsemi
Description: IC REG LIN POS ADJ 150MA 8-MSOP
Packaging: Tape & Reel (TR)
Package / Case: 8-TSSOP, 8-MSOP (0.118", 3.00mm Width)
Output Type: Adjustable
Mounting Type: Surface Mount
Current - Output: 150mA
Operating Temperature: 150°C (TJ)
Output Configuration: Positive
Current - Quiescent (Iq): 100 µA
Voltage - Input (Max): 38V
Number of Regulators: 1
Supplier Device Package: 8-MSOP
Voltage - Output (Max): 35V
Voltage - Output (Min/Fixed): 1.2V
Control Features: Enable, Soft Start
PSRR: 80dB ~ 48dB (10Hz ~ 1MHz)
Voltage Dropout (Max): 0.48V @ 150mA
Protection Features: Over Temperature, Short Circuit, Under Voltage Lockout (UVLO)
Description: IC REG LIN POS ADJ 150MA 8-MSOP
Packaging: Tape & Reel (TR)
Package / Case: 8-TSSOP, 8-MSOP (0.118", 3.00mm Width)
Output Type: Adjustable
Mounting Type: Surface Mount
Current - Output: 150mA
Operating Temperature: 150°C (TJ)
Output Configuration: Positive
Current - Quiescent (Iq): 100 µA
Voltage - Input (Max): 38V
Number of Regulators: 1
Supplier Device Package: 8-MSOP
Voltage - Output (Max): 35V
Voltage - Output (Min/Fixed): 1.2V
Control Features: Enable, Soft Start
PSRR: 80dB ~ 48dB (10Hz ~ 1MHz)
Voltage Dropout (Max): 0.48V @ 150mA
Protection Features: Over Temperature, Short Circuit, Under Voltage Lockout (UVLO)
auf Bestellung 21000 Stücke:
Lieferzeit 10-14 Tag (e)| Anzahl | Preis |
|---|---|
| 3000+ | 1.22 EUR |
| 6000+ | 1.19 EUR |
| 9000+ | 1.18 EUR |
| NCP731ADNADJR2G |
![]() |
Hersteller: onsemi
Description: IC REG LIN POS ADJ 150MA 8-MSOP
Packaging: Cut Tape (CT)
Package / Case: 8-TSSOP, 8-MSOP (0.118", 3.00mm Width)
Output Type: Adjustable
Mounting Type: Surface Mount
Current - Output: 150mA
Operating Temperature: 150°C (TJ)
Output Configuration: Positive
Current - Quiescent (Iq): 100 µA
Voltage - Input (Max): 38V
Number of Regulators: 1
Supplier Device Package: 8-MSOP
Voltage - Output (Max): 35V
Voltage - Output (Min/Fixed): 1.2V
Control Features: Enable, Soft Start
PSRR: 80dB ~ 48dB (10Hz ~ 1MHz)
Voltage Dropout (Max): 0.48V @ 150mA
Protection Features: Over Temperature, Short Circuit, Under Voltage Lockout (UVLO)
Description: IC REG LIN POS ADJ 150MA 8-MSOP
Packaging: Cut Tape (CT)
Package / Case: 8-TSSOP, 8-MSOP (0.118", 3.00mm Width)
Output Type: Adjustable
Mounting Type: Surface Mount
Current - Output: 150mA
Operating Temperature: 150°C (TJ)
Output Configuration: Positive
Current - Quiescent (Iq): 100 µA
Voltage - Input (Max): 38V
Number of Regulators: 1
Supplier Device Package: 8-MSOP
Voltage - Output (Max): 35V
Voltage - Output (Min/Fixed): 1.2V
Control Features: Enable, Soft Start
PSRR: 80dB ~ 48dB (10Hz ~ 1MHz)
Voltage Dropout (Max): 0.48V @ 150mA
Protection Features: Over Temperature, Short Circuit, Under Voltage Lockout (UVLO)
auf Bestellung 23089 Stücke:
Lieferzeit 10-14 Tag (e)| Anzahl | Preis |
|---|---|
| 8+ | 2.46 EUR |
| 10+ | 1.8 EUR |
| 25+ | 1.64 EUR |
| 100+ | 1.45 EUR |
| 250+ | 1.37 EUR |
| 500+ | 1.32 EUR |
| 1000+ | 1.27 EUR |
| DM74ALS08M |
![]() |
Hersteller: onsemi
Description: IC GATE AND 4CH 2-INP 14SOIC
Packaging: Tube
Package / Case: 14-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Logic Type: AND Gate
Operating Temperature: 0°C ~ 70°C
Voltage - Supply: 4.5V ~ 5.5V
Current - Output High, Low: 400µA, 8mA
Number of Inputs: 2
Supplier Device Package: 14-SOIC
Input Logic Level - High: 2V
Input Logic Level - Low: 0.8V
Max Propagation Delay @ V, Max CL: 14ns @ 5V, 50pF
Number of Circuits: 4
Description: IC GATE AND 4CH 2-INP 14SOIC
Packaging: Tube
Package / Case: 14-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Logic Type: AND Gate
Operating Temperature: 0°C ~ 70°C
Voltage - Supply: 4.5V ~ 5.5V
Current - Output High, Low: 400µA, 8mA
Number of Inputs: 2
Supplier Device Package: 14-SOIC
Input Logic Level - High: 2V
Input Logic Level - Low: 0.8V
Max Propagation Delay @ V, Max CL: 14ns @ 5V, 50pF
Number of Circuits: 4
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| DM74ALS08SJ |
![]() |
Hersteller: onsemi
Description: IC GATE AND 4CH 2-INP 14SOP
Packaging: Tube
Package / Case: 14-SOIC (0.209", 5.30mm Width)
Mounting Type: Surface Mount
Logic Type: AND Gate
Operating Temperature: 0°C ~ 70°C
Voltage - Supply: 4.5V ~ 5.5V
Current - Output High, Low: 400µA, 8mA
Number of Inputs: 2
Supplier Device Package: 14-SOP
Input Logic Level - High: 2V
Input Logic Level - Low: 0.8V
Max Propagation Delay @ V, Max CL: 14ns @ 5V, 50pF
Number of Circuits: 4
Description: IC GATE AND 4CH 2-INP 14SOP
Packaging: Tube
Package / Case: 14-SOIC (0.209", 5.30mm Width)
Mounting Type: Surface Mount
Logic Type: AND Gate
Operating Temperature: 0°C ~ 70°C
Voltage - Supply: 4.5V ~ 5.5V
Current - Output High, Low: 400µA, 8mA
Number of Inputs: 2
Supplier Device Package: 14-SOP
Input Logic Level - High: 2V
Input Logic Level - Low: 0.8V
Max Propagation Delay @ V, Max CL: 14ns @ 5V, 50pF
Number of Circuits: 4
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| DM74ALS08SJX |
![]() |
Hersteller: onsemi
Description: IC GATE AND 4CH 2-INP 14SOP
Packaging: Tape & Reel (TR)
Package / Case: 14-SOIC (0.209", 5.30mm Width)
Mounting Type: Surface Mount
Logic Type: AND Gate
Operating Temperature: 0°C ~ 70°C
Voltage - Supply: 4.5V ~ 5.5V
Current - Output High, Low: 400µA, 8mA
Number of Inputs: 2
Supplier Device Package: 14-SOP
Input Logic Level - High: 2V
Input Logic Level - Low: 0.8V
Max Propagation Delay @ V, Max CL: 14ns @ 5V, 50pF
Number of Circuits: 4
Description: IC GATE AND 4CH 2-INP 14SOP
Packaging: Tape & Reel (TR)
Package / Case: 14-SOIC (0.209", 5.30mm Width)
Mounting Type: Surface Mount
Logic Type: AND Gate
Operating Temperature: 0°C ~ 70°C
Voltage - Supply: 4.5V ~ 5.5V
Current - Output High, Low: 400µA, 8mA
Number of Inputs: 2
Supplier Device Package: 14-SOP
Input Logic Level - High: 2V
Input Logic Level - Low: 0.8V
Max Propagation Delay @ V, Max CL: 14ns @ 5V, 50pF
Number of Circuits: 4
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| ADM1030ARQ-REEL7 |
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Hersteller: onsemi
Description: IC SNSR TEMP/FAN PWM CTRL 16QSOP
Packaging: Tape & Reel (TR)
Package / Case: 16-SSOP (0.154", 3.90mm Width)
Output Type: SMBus
Mounting Type: Surface Mount
Function: Fan Control, Temp Monitor
Accuracy: ±1°C, ±1°C(Max)
Operating Temperature: 0°C ~ 100°C
Voltage - Supply: 3V ~ 5.5V
Sensor Type: Internal and External
Sensing Temperature: 0°C ~ 100°C, External Sensor
Topology: ADC, Comparator, Multiplexer, Register Bank
Output Alarm: Yes
Output Fan: Yes
Supplier Device Package: 16-QSOP
Description: IC SNSR TEMP/FAN PWM CTRL 16QSOP
Packaging: Tape & Reel (TR)
Package / Case: 16-SSOP (0.154", 3.90mm Width)
Output Type: SMBus
Mounting Type: Surface Mount
Function: Fan Control, Temp Monitor
Accuracy: ±1°C, ±1°C(Max)
Operating Temperature: 0°C ~ 100°C
Voltage - Supply: 3V ~ 5.5V
Sensor Type: Internal and External
Sensing Temperature: 0°C ~ 100°C, External Sensor
Topology: ADC, Comparator, Multiplexer, Register Bank
Output Alarm: Yes
Output Fan: Yes
Supplier Device Package: 16-QSOP
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| ADM1030ARQ |
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Hersteller: onsemi
Description: IC SNSR TEMP/FAN PWM CTRL 16QSOP
Packaging: Tube
Package / Case: 16-SSOP (0.154", 3.90mm Width)
Output Type: SMBus
Mounting Type: Surface Mount
Function: Fan Control, Temp Monitor
Accuracy: ±1°C, ±1°C(Max)
Operating Temperature: 0°C ~ 100°C
Voltage - Supply: 3V ~ 5.5V
Sensor Type: Internal and External
Sensing Temperature: 0°C ~ 100°C, External Sensor
Topology: ADC, Comparator, Multiplexer, Register Bank
Output Alarm: Yes
Output Fan: Yes
Supplier Device Package: 16-QSOP
Description: IC SNSR TEMP/FAN PWM CTRL 16QSOP
Packaging: Tube
Package / Case: 16-SSOP (0.154", 3.90mm Width)
Output Type: SMBus
Mounting Type: Surface Mount
Function: Fan Control, Temp Monitor
Accuracy: ±1°C, ±1°C(Max)
Operating Temperature: 0°C ~ 100°C
Voltage - Supply: 3V ~ 5.5V
Sensor Type: Internal and External
Sensing Temperature: 0°C ~ 100°C, External Sensor
Topology: ADC, Comparator, Multiplexer, Register Bank
Output Alarm: Yes
Output Fan: Yes
Supplier Device Package: 16-QSOP
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| 1N5365B |
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Hersteller: onsemi
Description: DIODE ZENER 36V 5W AXIAL
Packaging: Bulk
Tolerance: ±5%
Package / Case: T-18, Axial
Mounting Type: Through Hole
Operating Temperature: -65°C ~ 200°C
Voltage - Zener (Nom) (Vz): 36 V
Impedance (Max) (Zzt): 11 Ohms
Supplier Device Package: Axial
Power - Max: 5 W
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 1 A
Current - Reverse Leakage @ Vr: 500 nA @ 27.4 V
Description: DIODE ZENER 36V 5W AXIAL
Packaging: Bulk
Tolerance: ±5%
Package / Case: T-18, Axial
Mounting Type: Through Hole
Operating Temperature: -65°C ~ 200°C
Voltage - Zener (Nom) (Vz): 36 V
Impedance (Max) (Zzt): 11 Ohms
Supplier Device Package: Axial
Power - Max: 5 W
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 1 A
Current - Reverse Leakage @ Vr: 500 nA @ 27.4 V
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| UJ4C075060L8S |
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Hersteller: onsemi
Description: 750V/60MO,SICFET,G4,TOLL
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerSFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 27.8A (Tc)
Rds On (Max) @ Id, Vgs: 74mOhm @ 20A, 12V
Power Dissipation (Max): 155W (Tc)
Vgs(th) (Max) @ Id: 6V @ 10mA
Supplier Device Package: TOLL
Drive Voltage (Max Rds On, Min Rds On): 12V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 750 V
Gate Charge (Qg) (Max) @ Vgs: 37.8 nC @ 15 V
Input Capacitance (Ciss) (Max) @ Vds: 1420 pF @ 400 V
Description: 750V/60MO,SICFET,G4,TOLL
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerSFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 27.8A (Tc)
Rds On (Max) @ Id, Vgs: 74mOhm @ 20A, 12V
Power Dissipation (Max): 155W (Tc)
Vgs(th) (Max) @ Id: 6V @ 10mA
Supplier Device Package: TOLL
Drive Voltage (Max Rds On, Min Rds On): 12V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 750 V
Gate Charge (Qg) (Max) @ Vgs: 37.8 nC @ 15 V
Input Capacitance (Ciss) (Max) @ Vds: 1420 pF @ 400 V
auf Bestellung 2000 Stücke:
Lieferzeit 10-14 Tag (e)| Anzahl | Preis |
|---|---|
| 2000+ | 7.56 EUR |
| UJ4C075060L8S |
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Hersteller: onsemi
Description: 750V/60MO,SICFET,G4,TOLL
Packaging: Cut Tape (CT)
Package / Case: 8-PowerSFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 27.8A (Tc)
Rds On (Max) @ Id, Vgs: 74mOhm @ 20A, 12V
Power Dissipation (Max): 155W (Tc)
Vgs(th) (Max) @ Id: 6V @ 10mA
Supplier Device Package: TOLL
Drive Voltage (Max Rds On, Min Rds On): 12V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 750 V
Gate Charge (Qg) (Max) @ Vgs: 37.8 nC @ 15 V
Input Capacitance (Ciss) (Max) @ Vds: 1420 pF @ 400 V
Description: 750V/60MO,SICFET,G4,TOLL
Packaging: Cut Tape (CT)
Package / Case: 8-PowerSFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 27.8A (Tc)
Rds On (Max) @ Id, Vgs: 74mOhm @ 20A, 12V
Power Dissipation (Max): 155W (Tc)
Vgs(th) (Max) @ Id: 6V @ 10mA
Supplier Device Package: TOLL
Drive Voltage (Max Rds On, Min Rds On): 12V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 750 V
Gate Charge (Qg) (Max) @ Vgs: 37.8 nC @ 15 V
Input Capacitance (Ciss) (Max) @ Vds: 1420 pF @ 400 V
auf Bestellung 2000 Stücke:
Lieferzeit 10-14 Tag (e)| Anzahl | Preis |
|---|---|
| 2+ | 16.07 EUR |
| 10+ | 11.09 EUR |
| 100+ | 9.25 EUR |
| UJ4C075044L8S |
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Hersteller: onsemi
Description: 750V/44MO,SICFET,G4,TOLL
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerSFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 35.6A (Tc)
Rds On (Max) @ Id, Vgs: 56mOhm @ 25A, 12V
Power Dissipation (Max): 181W (Tc)
Vgs(th) (Max) @ Id: 6V @ 10mA
Supplier Device Package: TOLL
Drive Voltage (Max Rds On, Min Rds On): 12V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 750 V
Gate Charge (Qg) (Max) @ Vgs: 37.8 nC @ 15 V
Input Capacitance (Ciss) (Max) @ Vds: 1400 pF @ 400 V
Description: 750V/44MO,SICFET,G4,TOLL
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerSFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 35.6A (Tc)
Rds On (Max) @ Id, Vgs: 56mOhm @ 25A, 12V
Power Dissipation (Max): 181W (Tc)
Vgs(th) (Max) @ Id: 6V @ 10mA
Supplier Device Package: TOLL
Drive Voltage (Max Rds On, Min Rds On): 12V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 750 V
Gate Charge (Qg) (Max) @ Vgs: 37.8 nC @ 15 V
Input Capacitance (Ciss) (Max) @ Vds: 1400 pF @ 400 V
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| UJ4C075044L8S |
![]() |
Hersteller: onsemi
Description: 750V/44MO,SICFET,G4,TOLL
Packaging: Cut Tape (CT)
Package / Case: 8-PowerSFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 35.6A (Tc)
Rds On (Max) @ Id, Vgs: 56mOhm @ 25A, 12V
Power Dissipation (Max): 181W (Tc)
Vgs(th) (Max) @ Id: 6V @ 10mA
Supplier Device Package: TOLL
Drive Voltage (Max Rds On, Min Rds On): 12V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 750 V
Gate Charge (Qg) (Max) @ Vgs: 37.8 nC @ 15 V
Input Capacitance (Ciss) (Max) @ Vds: 1400 pF @ 400 V
Description: 750V/44MO,SICFET,G4,TOLL
Packaging: Cut Tape (CT)
Package / Case: 8-PowerSFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 35.6A (Tc)
Rds On (Max) @ Id, Vgs: 56mOhm @ 25A, 12V
Power Dissipation (Max): 181W (Tc)
Vgs(th) (Max) @ Id: 6V @ 10mA
Supplier Device Package: TOLL
Drive Voltage (Max Rds On, Min Rds On): 12V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 750 V
Gate Charge (Qg) (Max) @ Vgs: 37.8 nC @ 15 V
Input Capacitance (Ciss) (Max) @ Vds: 1400 pF @ 400 V
auf Bestellung 1961 Stücke:
Lieferzeit 10-14 Tag (e)| Anzahl | Preis |
|---|---|
| 1+ | 19.45 EUR |
| 10+ | 13.59 EUR |
| 100+ | 11.88 EUR |
| UG4SC075011K4S |
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Hersteller: onsemi
Description: 750V/11MO,COMBO-FET,G4,TO247-4
Packaging: Tube
Package / Case: TO-247-4
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 104A (Tc)
Rds On (Max) @ Id, Vgs: 14.2mOhm @ 60A, 12V
Power Dissipation (Max): 357W (Tc)
Vgs(th) (Max) @ Id: 6.7V @ 85mA
Supplier Device Package: TO-247-4
Drive Voltage (Max Rds On, Min Rds On): 12V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 750 V
Gate Charge (Qg) (Max) @ Vgs: 75 nC @ 15 V
Input Capacitance (Ciss) (Max) @ Vds: 3245 pF @ 400 V
Description: 750V/11MO,COMBO-FET,G4,TO247-4
Packaging: Tube
Package / Case: TO-247-4
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 104A (Tc)
Rds On (Max) @ Id, Vgs: 14.2mOhm @ 60A, 12V
Power Dissipation (Max): 357W (Tc)
Vgs(th) (Max) @ Id: 6.7V @ 85mA
Supplier Device Package: TO-247-4
Drive Voltage (Max Rds On, Min Rds On): 12V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 750 V
Gate Charge (Qg) (Max) @ Vgs: 75 nC @ 15 V
Input Capacitance (Ciss) (Max) @ Vds: 3245 pF @ 400 V
auf Bestellung 4778 Stücke:
Lieferzeit 10-14 Tag (e)| Anzahl | Preis |
|---|---|
| 1+ | 44.14 EUR |
| 10+ | 32.35 EUR |
| 100+ | 27.69 EUR |
| UG4SC075009K4S |
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Hersteller: onsemi
Description: 750V/9MO,COMBO-FET,G4,TO247-4
Packaging: Tube
Package / Case: TO-247-4
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 106A (Tc)
Rds On (Max) @ Id, Vgs: 11.5mOhm @ 70A, 12V
Power Dissipation (Max): 375W (Tc)
Vgs(th) (Max) @ Id: 6.7V @ 110mA
Supplier Device Package: TO-247-4
Drive Voltage (Max Rds On, Min Rds On): 12V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 750 V
Gate Charge (Qg) (Max) @ Vgs: 75 nC @ 15 V
Input Capacitance (Ciss) (Max) @ Vds: 3340 pF @ 400 V
Description: 750V/9MO,COMBO-FET,G4,TO247-4
Packaging: Tube
Package / Case: TO-247-4
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 106A (Tc)
Rds On (Max) @ Id, Vgs: 11.5mOhm @ 70A, 12V
Power Dissipation (Max): 375W (Tc)
Vgs(th) (Max) @ Id: 6.7V @ 110mA
Supplier Device Package: TO-247-4
Drive Voltage (Max Rds On, Min Rds On): 12V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 750 V
Gate Charge (Qg) (Max) @ Vgs: 75 nC @ 15 V
Input Capacitance (Ciss) (Max) @ Vds: 3340 pF @ 400 V
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| UG4SC075006K4S |
![]() |
Hersteller: onsemi
Description: 750V/6MO,COMBO-FET,G4,TO247-4
Packaging: Tube
Package / Case: TO-247-4
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 120A (Tc)
Rds On (Max) @ Id, Vgs: 7.5mOhm @ 80A, 12V
Power Dissipation (Max): 714W (Tc)
Vgs(th) (Max) @ Id: 3.7V @ 180mA
Supplier Device Package: TO-247-4
Drive Voltage (Max Rds On, Min Rds On): 12V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 750 V
Gate Charge (Qg) (Max) @ Vgs: 164 nC @ 15 V
Input Capacitance (Ciss) (Max) @ Vds: 8374 pF @ 400 V
Description: 750V/6MO,COMBO-FET,G4,TO247-4
Packaging: Tube
Package / Case: TO-247-4
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 120A (Tc)
Rds On (Max) @ Id, Vgs: 7.5mOhm @ 80A, 12V
Power Dissipation (Max): 714W (Tc)
Vgs(th) (Max) @ Id: 3.7V @ 180mA
Supplier Device Package: TO-247-4
Drive Voltage (Max Rds On, Min Rds On): 12V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 750 V
Gate Charge (Qg) (Max) @ Vgs: 164 nC @ 15 V
Input Capacitance (Ciss) (Max) @ Vds: 8374 pF @ 400 V
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| UJ4C075060L8SSB |
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Hersteller: onsemi
Description: 750V/60MO,SICFET,G4,TOLL
Packaging: Bulk
Package / Case: 8-PowerSFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 27.8A (Tj)
Rds On (Max) @ Id, Vgs: 74mOhm @ 20A, 12V
Power Dissipation (Max): 155W (Tc)
Vgs(th) (Max) @ Id: 6V @ 10mA
Supplier Device Package: TOLL
Drive Voltage (Max Rds On, Min Rds On): 12V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 750 V
Gate Charge (Qg) (Max) @ Vgs: 37.8 nC @ 15 V
Input Capacitance (Ciss) (Max) @ Vds: 1420 pF @ 400 V
Description: 750V/60MO,SICFET,G4,TOLL
Packaging: Bulk
Package / Case: 8-PowerSFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 27.8A (Tj)
Rds On (Max) @ Id, Vgs: 74mOhm @ 20A, 12V
Power Dissipation (Max): 155W (Tc)
Vgs(th) (Max) @ Id: 6V @ 10mA
Supplier Device Package: TOLL
Drive Voltage (Max Rds On, Min Rds On): 12V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 750 V
Gate Charge (Qg) (Max) @ Vgs: 37.8 nC @ 15 V
Input Capacitance (Ciss) (Max) @ Vds: 1420 pF @ 400 V
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| UJ4C075044L8SSB |
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Hersteller: onsemi
Description: 750V/44MO,SICFET,G4,TOLL
Packaging: Bulk
Package / Case: 8-PowerSFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 35.6A (Tj)
Rds On (Max) @ Id, Vgs: 56mOhm @ 25A, 12V
Power Dissipation (Max): 181W (Tc)
Vgs(th) (Max) @ Id: 6V @ 10mA
Supplier Device Package: TOLL
Drive Voltage (Max Rds On, Min Rds On): 12V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 750 V
Gate Charge (Qg) (Max) @ Vgs: 37.8 nC @ 15 V
Input Capacitance (Ciss) (Max) @ Vds: 1400 pF @ 400 V
Description: 750V/44MO,SICFET,G4,TOLL
Packaging: Bulk
Package / Case: 8-PowerSFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 35.6A (Tj)
Rds On (Max) @ Id, Vgs: 56mOhm @ 25A, 12V
Power Dissipation (Max): 181W (Tc)
Vgs(th) (Max) @ Id: 6V @ 10mA
Supplier Device Package: TOLL
Drive Voltage (Max Rds On, Min Rds On): 12V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 750 V
Gate Charge (Qg) (Max) @ Vgs: 37.8 nC @ 15 V
Input Capacitance (Ciss) (Max) @ Vds: 1400 pF @ 400 V
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| UF4C120070B7SSB |
![]() |
Hersteller: onsemi
Description: 1200V/70MO,SICFET,G4,TO263-7
Packaging: Bulk
Package / Case: TO-263-8, D2PAK (7 Leads + Tab), TO-263CA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: SiCFET (Cascode SiCJFET)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 25.7A (Tj)
Rds On (Max) @ Id, Vgs: 91mOhm @ 20A, 12V
Power Dissipation (Max): 183W (Tc)
Vgs(th) (Max) @ Id: 6V @ 10mA
Supplier Device Package: D2PAK-7L
Drive Voltage (Max Rds On, Min Rds On): 12V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 1200 V
Gate Charge (Qg) (Max) @ Vgs: 37.8 nC @ 15 V
Input Capacitance (Ciss) (Max) @ Vds: 1370 pF @ 800 V
Description: 1200V/70MO,SICFET,G4,TO263-7
Packaging: Bulk
Package / Case: TO-263-8, D2PAK (7 Leads + Tab), TO-263CA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: SiCFET (Cascode SiCJFET)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 25.7A (Tj)
Rds On (Max) @ Id, Vgs: 91mOhm @ 20A, 12V
Power Dissipation (Max): 183W (Tc)
Vgs(th) (Max) @ Id: 6V @ 10mA
Supplier Device Package: D2PAK-7L
Drive Voltage (Max Rds On, Min Rds On): 12V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 1200 V
Gate Charge (Qg) (Max) @ Vgs: 37.8 nC @ 15 V
Input Capacitance (Ciss) (Max) @ Vds: 1370 pF @ 800 V
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| UJ4C075033L8SSB |
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Hersteller: onsemi
Description: 750V/33MO,SICFET,G4,TOLL
Packaging: Bulk
Package / Case: 8-PowerSFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 44A (Tj)
Rds On (Max) @ Id, Vgs: 41mOhm @ 230A, 12V
Power Dissipation (Max): 205W (Tc)
Vgs(th) (Max) @ Id: 6V @ 10mA
Supplier Device Package: TOLL
Drive Voltage (Max Rds On, Min Rds On): 12V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 750 V
Gate Charge (Qg) (Max) @ Vgs: 37.8 nC @ 15 V
Input Capacitance (Ciss) (Max) @ Vds: 1400 pF @ 400 V
Description: 750V/33MO,SICFET,G4,TOLL
Packaging: Bulk
Package / Case: 8-PowerSFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 44A (Tj)
Rds On (Max) @ Id, Vgs: 41mOhm @ 230A, 12V
Power Dissipation (Max): 205W (Tc)
Vgs(th) (Max) @ Id: 6V @ 10mA
Supplier Device Package: TOLL
Drive Voltage (Max Rds On, Min Rds On): 12V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 750 V
Gate Charge (Qg) (Max) @ Vgs: 37.8 nC @ 15 V
Input Capacitance (Ciss) (Max) @ Vds: 1400 pF @ 400 V
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| UJ4C075023L8SSB |
![]() |
Hersteller: onsemi
Description: 750V/23MO,SICFET,G4,TOLL
Packaging: Bulk
Package / Case: 8-PowerSFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 64A (Tj)
Rds On (Max) @ Id, Vgs: 29mOhm @ 40A, 12V
Power Dissipation (Max): 278W (Tc)
Vgs(th) (Max) @ Id: 6V @ 10mA
Supplier Device Package: TOLL
Drive Voltage (Max Rds On, Min Rds On): 12V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 750 V
Gate Charge (Qg) (Max) @ Vgs: 37.8 nC @ 15 V
Input Capacitance (Ciss) (Max) @ Vds: 1400 pF @ 400 V
Description: 750V/23MO,SICFET,G4,TOLL
Packaging: Bulk
Package / Case: 8-PowerSFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 64A (Tj)
Rds On (Max) @ Id, Vgs: 29mOhm @ 40A, 12V
Power Dissipation (Max): 278W (Tc)
Vgs(th) (Max) @ Id: 6V @ 10mA
Supplier Device Package: TOLL
Drive Voltage (Max Rds On, Min Rds On): 12V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 750 V
Gate Charge (Qg) (Max) @ Vgs: 37.8 nC @ 15 V
Input Capacitance (Ciss) (Max) @ Vds: 1400 pF @ 400 V
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| UF4C120053B7SSB |
![]() |
Hersteller: onsemi
Description: 1200V/53MO,SICFET,G4,TO263-7
Packaging: Bulk
Package / Case: TO-263-8, D2PAK (7 Leads + Tab), TO-263CA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: SiCFET (Cascode SiCJFET)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 34A (Tj)
Rds On (Max) @ Id, Vgs: 67mOhm @ 20A, 12V
Power Dissipation (Max): 250W (Tc)
Vgs(th) (Max) @ Id: 6V @ 10mA
Supplier Device Package: D2PAK-7L
Drive Voltage (Max Rds On, Min Rds On): 12V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 1200 V
Gate Charge (Qg) (Max) @ Vgs: 37.8 nC @ 15 V
Input Capacitance (Ciss) (Max) @ Vds: 1370 pF @ 800 V
Description: 1200V/53MO,SICFET,G4,TO263-7
Packaging: Bulk
Package / Case: TO-263-8, D2PAK (7 Leads + Tab), TO-263CA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: SiCFET (Cascode SiCJFET)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 34A (Tj)
Rds On (Max) @ Id, Vgs: 67mOhm @ 20A, 12V
Power Dissipation (Max): 250W (Tc)
Vgs(th) (Max) @ Id: 6V @ 10mA
Supplier Device Package: D2PAK-7L
Drive Voltage (Max Rds On, Min Rds On): 12V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 1200 V
Gate Charge (Qg) (Max) @ Vgs: 37.8 nC @ 15 V
Input Capacitance (Ciss) (Max) @ Vds: 1370 pF @ 800 V
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| UF4SC120030B7SSB |
![]() |
Hersteller: onsemi
Description: 1200V/30MO,SICFET,G4,TO263-7
Packaging: Bulk
Package / Case: TO-263-8, D2PAK (7 Leads + Tab), TO-263CA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: SiCFET (Cascode SiCJFET)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 56A (Tj)
Rds On (Max) @ Id, Vgs: 39mOhm @ 20A, 12V
Power Dissipation (Max): 341W (Tc)
Vgs(th) (Max) @ Id: 6V @ 10mA
Supplier Device Package: D2PAK-7L
Drive Voltage (Max Rds On, Min Rds On): 12V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 1200 V
Gate Charge (Qg) (Max) @ Vgs: 37.8 nC @ 15 V
Input Capacitance (Ciss) (Max) @ Vds: 1450 pF @ 800 V
Description: 1200V/30MO,SICFET,G4,TO263-7
Packaging: Bulk
Package / Case: TO-263-8, D2PAK (7 Leads + Tab), TO-263CA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: SiCFET (Cascode SiCJFET)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 56A (Tj)
Rds On (Max) @ Id, Vgs: 39mOhm @ 20A, 12V
Power Dissipation (Max): 341W (Tc)
Vgs(th) (Max) @ Id: 6V @ 10mA
Supplier Device Package: D2PAK-7L
Drive Voltage (Max Rds On, Min Rds On): 12V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 1200 V
Gate Charge (Qg) (Max) @ Vgs: 37.8 nC @ 15 V
Input Capacitance (Ciss) (Max) @ Vds: 1450 pF @ 800 V
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| UF4SC120023B7SSB |
![]() |
Hersteller: onsemi
Description: 1200V/23MO,SICFET,G4,TO263-7
Packaging: Bulk
Package / Case: TO-263-8, D2PAK (7 Leads + Tab), TO-263CA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: SiCFET (Cascode SiCJFET)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 72A (Tj)
Rds On (Max) @ Id, Vgs: 30mOhm @ 40A, 12V
Power Dissipation (Max): 385W (Tc)
Vgs(th) (Max) @ Id: 6V @ 10mA
Supplier Device Package: D2PAK-7L
Drive Voltage (Max Rds On, Min Rds On): 12V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 1200 V
Gate Charge (Qg) (Max) @ Vgs: 37.8 nC @ 15 V
Input Capacitance (Ciss) (Max) @ Vds: 1430 pF @ 800 V
Description: 1200V/23MO,SICFET,G4,TO263-7
Packaging: Bulk
Package / Case: TO-263-8, D2PAK (7 Leads + Tab), TO-263CA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: SiCFET (Cascode SiCJFET)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 72A (Tj)
Rds On (Max) @ Id, Vgs: 30mOhm @ 40A, 12V
Power Dissipation (Max): 385W (Tc)
Vgs(th) (Max) @ Id: 6V @ 10mA
Supplier Device Package: D2PAK-7L
Drive Voltage (Max Rds On, Min Rds On): 12V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 1200 V
Gate Charge (Qg) (Max) @ Vgs: 37.8 nC @ 15 V
Input Capacitance (Ciss) (Max) @ Vds: 1430 pF @ 800 V
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| UJ4SC075010L8SSB |
![]() |
Hersteller: onsemi
Description: 750V/10MO,SICFET,G4,TOLL
Packaging: Bulk
Package / Case: 8-PowerSFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 106A (Tc)
Rds On (Max) @ Id, Vgs: 14.2mOhm @ 60A, 12V
Power Dissipation (Max): 556W (Tc)
Vgs(th) (Max) @ Id: 5.5V @ 10mA
Supplier Device Package: TOLL
Drive Voltage (Max Rds On, Min Rds On): 12V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 750 V
Gate Charge (Qg) (Max) @ Vgs: 75 nC @ 15 V
Input Capacitance (Ciss) (Max) @ Vds: 3245 pF @ 400 V
Description: 750V/10MO,SICFET,G4,TOLL
Packaging: Bulk
Package / Case: 8-PowerSFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 106A (Tc)
Rds On (Max) @ Id, Vgs: 14.2mOhm @ 60A, 12V
Power Dissipation (Max): 556W (Tc)
Vgs(th) (Max) @ Id: 5.5V @ 10mA
Supplier Device Package: TOLL
Drive Voltage (Max Rds On, Min Rds On): 12V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 750 V
Gate Charge (Qg) (Max) @ Vgs: 75 nC @ 15 V
Input Capacitance (Ciss) (Max) @ Vds: 3245 pF @ 400 V
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| UF4C120053B7SSR |
![]() |
Hersteller: onsemi
Description: 1200V/53MO,SICFET,G4,TO263-7
Packaging: Bulk
Package / Case: TO-263-8, D2PAK (7 Leads + Tab), TO-263CA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: SiCFET (Cascode SiCJFET)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 34A (Tj)
Rds On (Max) @ Id, Vgs: 67mOhm @ 20A, 12V
Power Dissipation (Max): 250W (Tc)
Vgs(th) (Max) @ Id: 6V @ 10mA
Supplier Device Package: D2PAK-7L
Drive Voltage (Max Rds On, Min Rds On): 12V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 1200 V
Gate Charge (Qg) (Max) @ Vgs: 37.8 nC @ 15 V
Input Capacitance (Ciss) (Max) @ Vds: 1370 pF @ 800 V
Description: 1200V/53MO,SICFET,G4,TO263-7
Packaging: Bulk
Package / Case: TO-263-8, D2PAK (7 Leads + Tab), TO-263CA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: SiCFET (Cascode SiCJFET)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 34A (Tj)
Rds On (Max) @ Id, Vgs: 67mOhm @ 20A, 12V
Power Dissipation (Max): 250W (Tc)
Vgs(th) (Max) @ Id: 6V @ 10mA
Supplier Device Package: D2PAK-7L
Drive Voltage (Max Rds On, Min Rds On): 12V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 1200 V
Gate Charge (Qg) (Max) @ Vgs: 37.8 nC @ 15 V
Input Capacitance (Ciss) (Max) @ Vds: 1370 pF @ 800 V
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| UF4C120070B7SSR |
![]() |
Hersteller: onsemi
Description: 1200V/70MO,SICFET,G4,TO263-7
Packaging: Bulk
Package / Case: TO-263-8, D2PAK (7 Leads + Tab), TO-263CA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: SiCFET (Cascode SiCJFET)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 25.7A (Tj)
Rds On (Max) @ Id, Vgs: 91mOhm @ 20A, 12V
Power Dissipation (Max): 183W (Tc)
Vgs(th) (Max) @ Id: 6V @ 10mA
Supplier Device Package: D2PAK-7L
Drive Voltage (Max Rds On, Min Rds On): 12V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 1200 V
Gate Charge (Qg) (Max) @ Vgs: 37.8 nC @ 15 V
Input Capacitance (Ciss) (Max) @ Vds: 1370 pF @ 800 V
Description: 1200V/70MO,SICFET,G4,TO263-7
Packaging: Bulk
Package / Case: TO-263-8, D2PAK (7 Leads + Tab), TO-263CA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: SiCFET (Cascode SiCJFET)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 25.7A (Tj)
Rds On (Max) @ Id, Vgs: 91mOhm @ 20A, 12V
Power Dissipation (Max): 183W (Tc)
Vgs(th) (Max) @ Id: 6V @ 10mA
Supplier Device Package: D2PAK-7L
Drive Voltage (Max Rds On, Min Rds On): 12V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 1200 V
Gate Charge (Qg) (Max) @ Vgs: 37.8 nC @ 15 V
Input Capacitance (Ciss) (Max) @ Vds: 1370 pF @ 800 V
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| UF4SC120030B7SSR |
![]() |
Hersteller: onsemi
Description: 1200V/30MO,SICFET,G4,TO263-7
Packaging: Bulk
Package / Case: TO-263-8, D2PAK (7 Leads + Tab), TO-263CA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: SiCFET (Cascode SiCJFET)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 56A (Tj)
Rds On (Max) @ Id, Vgs: 39mOhm @ 20A, 12V
Power Dissipation (Max): 341W (Tc)
Vgs(th) (Max) @ Id: 6V @ 10mA
Supplier Device Package: D2PAK-7L
Drive Voltage (Max Rds On, Min Rds On): 12V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 1200 V
Gate Charge (Qg) (Max) @ Vgs: 37.8 nC @ 15 V
Input Capacitance (Ciss) (Max) @ Vds: 1450 pF @ 800 V
Description: 1200V/30MO,SICFET,G4,TO263-7
Packaging: Bulk
Package / Case: TO-263-8, D2PAK (7 Leads + Tab), TO-263CA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: SiCFET (Cascode SiCJFET)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 56A (Tj)
Rds On (Max) @ Id, Vgs: 39mOhm @ 20A, 12V
Power Dissipation (Max): 341W (Tc)
Vgs(th) (Max) @ Id: 6V @ 10mA
Supplier Device Package: D2PAK-7L
Drive Voltage (Max Rds On, Min Rds On): 12V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 1200 V
Gate Charge (Qg) (Max) @ Vgs: 37.8 nC @ 15 V
Input Capacitance (Ciss) (Max) @ Vds: 1450 pF @ 800 V
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| UJ4C075023L8SSR |
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Hersteller: onsemi
Description: 750V/23MO,SICFET,G4,TOLL
Packaging: Bulk
Package / Case: 8-PowerSFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 64A (Tj)
Rds On (Max) @ Id, Vgs: 29mOhm @ 40A, 12V
Power Dissipation (Max): 278W (Tc)
Vgs(th) (Max) @ Id: 6V @ 10mA
Supplier Device Package: TOLL
Drive Voltage (Max Rds On, Min Rds On): 12V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 750 V
Gate Charge (Qg) (Max) @ Vgs: 37.8 nC @ 15 V
Input Capacitance (Ciss) (Max) @ Vds: 1400 pF @ 400 V
Description: 750V/23MO,SICFET,G4,TOLL
Packaging: Bulk
Package / Case: 8-PowerSFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 64A (Tj)
Rds On (Max) @ Id, Vgs: 29mOhm @ 40A, 12V
Power Dissipation (Max): 278W (Tc)
Vgs(th) (Max) @ Id: 6V @ 10mA
Supplier Device Package: TOLL
Drive Voltage (Max Rds On, Min Rds On): 12V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 750 V
Gate Charge (Qg) (Max) @ Vgs: 37.8 nC @ 15 V
Input Capacitance (Ciss) (Max) @ Vds: 1400 pF @ 400 V
Produkt ist nicht verfügbar
Im Einkaufswagen
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| UJ4C075033L8SSR |
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Hersteller: onsemi
Description: 750V/33MO,SICFET,G4,TOLL
Packaging: Bulk
Package / Case: 8-PowerSFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 44A (Tj)
Rds On (Max) @ Id, Vgs: 41mOhm @ 230A, 12V
Power Dissipation (Max): 205W (Tc)
Vgs(th) (Max) @ Id: 6V @ 10mA
Supplier Device Package: TOLL
Drive Voltage (Max Rds On, Min Rds On): 12V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 750 V
Gate Charge (Qg) (Max) @ Vgs: 37.8 nC @ 15 V
Input Capacitance (Ciss) (Max) @ Vds: 1400 pF @ 400 V
Description: 750V/33MO,SICFET,G4,TOLL
Packaging: Bulk
Package / Case: 8-PowerSFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 44A (Tj)
Rds On (Max) @ Id, Vgs: 41mOhm @ 230A, 12V
Power Dissipation (Max): 205W (Tc)
Vgs(th) (Max) @ Id: 6V @ 10mA
Supplier Device Package: TOLL
Drive Voltage (Max Rds On, Min Rds On): 12V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 750 V
Gate Charge (Qg) (Max) @ Vgs: 37.8 nC @ 15 V
Input Capacitance (Ciss) (Max) @ Vds: 1400 pF @ 400 V
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| UJ4C075044L8SSR |
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Hersteller: onsemi
Description: 750V/44MO,SICFET,G4,TOLL
Packaging: Bulk
Package / Case: 8-PowerSFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 35.6A (Tj)
Rds On (Max) @ Id, Vgs: 56mOhm @ 25A, 12V
Power Dissipation (Max): 181W (Tc)
Vgs(th) (Max) @ Id: 6V @ 10mA
Supplier Device Package: TOLL
Drive Voltage (Max Rds On, Min Rds On): 12V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 750 V
Gate Charge (Qg) (Max) @ Vgs: 37.8 nC @ 15 V
Input Capacitance (Ciss) (Max) @ Vds: 1400 pF @ 400 V
Description: 750V/44MO,SICFET,G4,TOLL
Packaging: Bulk
Package / Case: 8-PowerSFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 35.6A (Tj)
Rds On (Max) @ Id, Vgs: 56mOhm @ 25A, 12V
Power Dissipation (Max): 181W (Tc)
Vgs(th) (Max) @ Id: 6V @ 10mA
Supplier Device Package: TOLL
Drive Voltage (Max Rds On, Min Rds On): 12V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 750 V
Gate Charge (Qg) (Max) @ Vgs: 37.8 nC @ 15 V
Input Capacitance (Ciss) (Max) @ Vds: 1400 pF @ 400 V
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| UJ4C075060L8SSR |
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Hersteller: onsemi
Description: 750V/60MO,SICFET,G4,TOLL
Packaging: Bulk
Package / Case: 8-PowerSFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 27.8A (Tj)
Rds On (Max) @ Id, Vgs: 74mOhm @ 20A, 12V
Power Dissipation (Max): 155W (Tc)
Vgs(th) (Max) @ Id: 6V @ 10mA
Supplier Device Package: TOLL
Drive Voltage (Max Rds On, Min Rds On): 12V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 750 V
Gate Charge (Qg) (Max) @ Vgs: 37.8 nC @ 15 V
Input Capacitance (Ciss) (Max) @ Vds: 1420 pF @ 400 V
Description: 750V/60MO,SICFET,G4,TOLL
Packaging: Bulk
Package / Case: 8-PowerSFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 27.8A (Tj)
Rds On (Max) @ Id, Vgs: 74mOhm @ 20A, 12V
Power Dissipation (Max): 155W (Tc)
Vgs(th) (Max) @ Id: 6V @ 10mA
Supplier Device Package: TOLL
Drive Voltage (Max Rds On, Min Rds On): 12V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 750 V
Gate Charge (Qg) (Max) @ Vgs: 37.8 nC @ 15 V
Input Capacitance (Ciss) (Max) @ Vds: 1420 pF @ 400 V
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| UJ4SC075010L8SSR |
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Hersteller: onsemi
Description: 750V/10MO,SICFET,G4,TOLL
Packaging: Bulk
Package / Case: 8-PowerSFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: SiCFET (Cascode SiCJFET)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 106A (Tc)
Rds On (Max) @ Id, Vgs: 14.2mOhm @ 60A, 12V
Power Dissipation (Max): 556W (Tc)
Vgs(th) (Max) @ Id: 5.5V @ 10mA
Supplier Device Package: TOLL
Drive Voltage (Max Rds On, Min Rds On): 12V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 750 V
Gate Charge (Qg) (Max) @ Vgs: 75 nC @ 15 V
Input Capacitance (Ciss) (Max) @ Vds: 3245 pF @ 400 V
Description: 750V/10MO,SICFET,G4,TOLL
Packaging: Bulk
Package / Case: 8-PowerSFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: SiCFET (Cascode SiCJFET)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 106A (Tc)
Rds On (Max) @ Id, Vgs: 14.2mOhm @ 60A, 12V
Power Dissipation (Max): 556W (Tc)
Vgs(th) (Max) @ Id: 5.5V @ 10mA
Supplier Device Package: TOLL
Drive Voltage (Max Rds On, Min Rds On): 12V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 750 V
Gate Charge (Qg) (Max) @ Vgs: 75 nC @ 15 V
Input Capacitance (Ciss) (Max) @ Vds: 3245 pF @ 400 V
Produkt ist nicht verfügbar
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| D45H11 |
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Hersteller: onsemi
Description: TRANS PNP 80V 10A TO-220
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Transistor Type: PNP
Operating Temperature: -55°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 1V @ 400mA, 8A
Current - Collector Cutoff (Max): 10µA
DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 4A, 1V
Frequency - Transition: 40MHz
Supplier Device Package: TO-220
Current - Collector (Ic) (Max): 10 A
Voltage - Collector Emitter Breakdown (Max): 80 V
Power - Max: 2 W
Description: TRANS PNP 80V 10A TO-220
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Transistor Type: PNP
Operating Temperature: -55°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 1V @ 400mA, 8A
Current - Collector Cutoff (Max): 10µA
DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 4A, 1V
Frequency - Transition: 40MHz
Supplier Device Package: TO-220
Current - Collector (Ic) (Max): 10 A
Voltage - Collector Emitter Breakdown (Max): 80 V
Power - Max: 2 W
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| D45H11 |
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Hersteller: onsemi
Description: TRANS PNP 80V 10A TO-220
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Transistor Type: PNP
Operating Temperature: -55°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 1V @ 400mA, 8A
Current - Collector Cutoff (Max): 10µA
DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 4A, 1V
Frequency - Transition: 40MHz
Supplier Device Package: TO-220
Current - Collector (Ic) (Max): 10 A
Voltage - Collector Emitter Breakdown (Max): 80 V
Power - Max: 2 W
Description: TRANS PNP 80V 10A TO-220
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Transistor Type: PNP
Operating Temperature: -55°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 1V @ 400mA, 8A
Current - Collector Cutoff (Max): 10µA
DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 4A, 1V
Frequency - Transition: 40MHz
Supplier Device Package: TO-220
Current - Collector (Ic) (Max): 10 A
Voltage - Collector Emitter Breakdown (Max): 80 V
Power - Max: 2 W
Produkt ist nicht verfügbar
Im Einkaufswagen
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| CEM102 |
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Hersteller: onsemi
Description: CGM ASSP CHICOPEE G0A07UN-J0XH-S
Packaging: Tape & Reel (TR)
Package / Case: 25-XFBGA, WLCSP
Mounting Type: Surface Mount
Voltage - Supply, Analog: 2.375V ~ 3.63V
Voltage - Supply, Digital: 2.375V ~ 3.63V
Supplier Device Package: 25-WLCSP (1.88x1.85)
Number of Channels: 2
Description: CGM ASSP CHICOPEE G0A07UN-J0XH-S
Packaging: Tape & Reel (TR)
Package / Case: 25-XFBGA, WLCSP
Mounting Type: Surface Mount
Voltage - Supply, Analog: 2.375V ~ 3.63V
Voltage - Supply, Digital: 2.375V ~ 3.63V
Supplier Device Package: 25-WLCSP (1.88x1.85)
Number of Channels: 2
auf Bestellung 5000 Stücke:
Lieferzeit 10-14 Tag (e)| Anzahl | Preis |
|---|---|
| 5000+ | 6.67 EUR |
| CEM102 |
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Hersteller: onsemi
Description: CGM ASSP CHICOPEE G0A07UN-J0XH-S
Packaging: Cut Tape (CT)
Package / Case: 25-XFBGA, WLCSP
Mounting Type: Surface Mount
Voltage - Supply, Analog: 2.375V ~ 3.63V
Voltage - Supply, Digital: 2.375V ~ 3.63V
Supplier Device Package: 25-WLCSP (1.88x1.85)
Number of Channels: 2
Description: CGM ASSP CHICOPEE G0A07UN-J0XH-S
Packaging: Cut Tape (CT)
Package / Case: 25-XFBGA, WLCSP
Mounting Type: Surface Mount
Voltage - Supply, Analog: 2.375V ~ 3.63V
Voltage - Supply, Digital: 2.375V ~ 3.63V
Supplier Device Package: 25-WLCSP (1.88x1.85)
Number of Channels: 2
auf Bestellung 9785 Stücke:
Lieferzeit 10-14 Tag (e)| Anzahl | Preis |
|---|---|
| 2+ | 11.75 EUR |
| 10+ | 9.09 EUR |
| 25+ | 8.43 EUR |
| 100+ | 7.7 EUR |
| 250+ | 7.35 EUR |
| 500+ | 7.14 EUR |
| 1000+ | 6.97 EUR |
| FCPF11N60NT |
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Hersteller: onsemi
Description: MOSFET N-CH 600V 10.8A TO220F
Packaging: Tube
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 10.8A (Tc)
Rds On (Max) @ Id, Vgs: 299mOhm @ 5.4A, 10V
Power Dissipation (Max): 32.1W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-220F-3
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 35.6 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1505 pF @ 100 V
Description: MOSFET N-CH 600V 10.8A TO220F
Packaging: Tube
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 10.8A (Tc)
Rds On (Max) @ Id, Vgs: 299mOhm @ 5.4A, 10V
Power Dissipation (Max): 32.1W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-220F-3
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 35.6 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1505 pF @ 100 V
Produkt ist nicht verfügbar
Im Einkaufswagen
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| NGTB20N135IHRWG |
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Hersteller: onsemi
Description: IGBT TRENCH FS 1350V 40A TO-247
Packaging: Bulk
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 175°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 2.65V @ 15V, 20A
Supplier Device Package: TO-247
IGBT Type: Trench Field Stop
Td (on/off) @ 25°C: -/245ns
Switching Energy: 600µJ (off)
Test Condition: 600V, 20A, 10Ohm, 15V
Gate Charge: 234 nC
Current - Collector (Ic) (Max): 40 A
Voltage - Collector Emitter Breakdown (Max): 1350 V
Current - Collector Pulsed (Icm): 120 A
Power - Max: 394 W
Description: IGBT TRENCH FS 1350V 40A TO-247
Packaging: Bulk
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 175°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 2.65V @ 15V, 20A
Supplier Device Package: TO-247
IGBT Type: Trench Field Stop
Td (on/off) @ 25°C: -/245ns
Switching Energy: 600µJ (off)
Test Condition: 600V, 20A, 10Ohm, 15V
Gate Charge: 234 nC
Current - Collector (Ic) (Max): 40 A
Voltage - Collector Emitter Breakdown (Max): 1350 V
Current - Collector Pulsed (Icm): 120 A
Power - Max: 394 W
auf Bestellung 82981 Stücke:
Lieferzeit 10-14 Tag (e)| Anzahl | Preis |
|---|---|
| 95+ | 4.72 EUR |
| 1N4741A |
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Hersteller: onsemi
Description: DIODE ZENER 11V 1W DO41
Tolerance: ±5%
Packaging: Bulk
Package / Case: DO-204AL, DO-41, Axial
Mounting Type: Through Hole
Operating Temperature: -65°C ~ 200°C
Voltage - Zener (Nom) (Vz): 11 V
Impedance (Max) (Zzt): 8 Ohms
Supplier Device Package: DO-41
Power - Max: 1 W
Current - Reverse Leakage @ Vr: 5 µA @ 8.4 V
Description: DIODE ZENER 11V 1W DO41
Tolerance: ±5%
Packaging: Bulk
Package / Case: DO-204AL, DO-41, Axial
Mounting Type: Through Hole
Operating Temperature: -65°C ~ 200°C
Voltage - Zener (Nom) (Vz): 11 V
Impedance (Max) (Zzt): 8 Ohms
Supplier Device Package: DO-41
Power - Max: 1 W
Current - Reverse Leakage @ Vr: 5 µA @ 8.4 V
auf Bestellung 6035 Stücke:
Lieferzeit 10-14 Tag (e)| Anzahl | Preis |
|---|---|
| 108+ | 0.16 EUR |
| 144+ | 0.12 EUR |
| 319+ | 0.055 EUR |
| 500+ | 0.052 EUR |
| 1000+ | 0.051 EUR |
| 3000+ | 0.046 EUR |
| 1N5395 |
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Hersteller: onsemi
Description: DIODE STANDARD 400V 1.5A DO15
Packaging: Tape & Reel (TR)
Package / Case: DO-204AC, DO-15, Axial
Mounting Type: Through Hole
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard
Capacitance @ Vr, F: 25pF @ 4V, 1MHz
Current - Average Rectified (Io): 1.5A
Supplier Device Package: DO-15
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 400 V
Voltage - Forward (Vf) (Max) @ If: 1.4 V @ 1.5 A
Current - Reverse Leakage @ Vr: 5 µA @ 400 V
Description: DIODE STANDARD 400V 1.5A DO15
Packaging: Tape & Reel (TR)
Package / Case: DO-204AC, DO-15, Axial
Mounting Type: Through Hole
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard
Capacitance @ Vr, F: 25pF @ 4V, 1MHz
Current - Average Rectified (Io): 1.5A
Supplier Device Package: DO-15
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 400 V
Voltage - Forward (Vf) (Max) @ If: 1.4 V @ 1.5 A
Current - Reverse Leakage @ Vr: 5 µA @ 400 V
Produkt ist nicht verfügbar
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| BZX55C4V3 |
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Hersteller: onsemi
Description: DIODE ZENER 4.3V 500MW DO35
Packaging: Bulk
Tolerance: ±7%
Package / Case: DO-204AH, DO-35, Axial
Mounting Type: Through Hole
Operating Temperature: -65°C ~ 200°C
Voltage - Zener (Nom) (Vz): 4.3 V
Impedance (Max) (Zzt): 75 Ohms
Supplier Device Package: DO-35
Power - Max: 500 mW
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 100 mA
Current - Reverse Leakage @ Vr: 1 µA @ 1 V
Description: DIODE ZENER 4.3V 500MW DO35
Packaging: Bulk
Tolerance: ±7%
Package / Case: DO-204AH, DO-35, Axial
Mounting Type: Through Hole
Operating Temperature: -65°C ~ 200°C
Voltage - Zener (Nom) (Vz): 4.3 V
Impedance (Max) (Zzt): 75 Ohms
Supplier Device Package: DO-35
Power - Max: 500 mW
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 100 mA
Current - Reverse Leakage @ Vr: 1 µA @ 1 V
Produkt ist nicht verfügbar
Im Einkaufswagen
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| N25S830HAT22I |
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Hersteller: onsemi
Description: IC SRAM 256KBIT SPI 20MHZ 8TSSOP
Packaging: Bulk
Package / Case: 8-TSSOP (0.173", 4.40mm Width)
Mounting Type: Surface Mount
Memory Size: 256Kbit
Memory Type: Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 2.7V ~ 3.6V
Technology: SRAM
Clock Frequency: 20 MHz
Memory Format: SRAM
Supplier Device Package: 8-TSSOP
Memory Interface: SPI
Memory Organization: 32K x 8
DigiKey Programmable: Not Verified
Description: IC SRAM 256KBIT SPI 20MHZ 8TSSOP
Packaging: Bulk
Package / Case: 8-TSSOP (0.173", 4.40mm Width)
Mounting Type: Surface Mount
Memory Size: 256Kbit
Memory Type: Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 2.7V ~ 3.6V
Technology: SRAM
Clock Frequency: 20 MHz
Memory Format: SRAM
Supplier Device Package: 8-TSSOP
Memory Interface: SPI
Memory Organization: 32K x 8
DigiKey Programmable: Not Verified
auf Bestellung 2505 Stücke:
Lieferzeit 10-14 Tag (e)| Anzahl | Preis |
|---|---|
| 186+ | 2.4 EUR |
| 1N5339B | ![]() |
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Hersteller: onsemi
Description: DIODE ZENER 5.6V 5W AXIAL
Packaging: Bulk
Tolerance: ±5%
Package / Case: T-18, Axial
Mounting Type: Through Hole
Operating Temperature: -65°C ~ 200°C
Voltage - Zener (Nom) (Vz): 5.6 V
Impedance (Max) (Zzt): 1 Ohms
Supplier Device Package: Axial
Power - Max: 5 W
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 1 A
Current - Reverse Leakage @ Vr: 1 µA @ 2 V
Description: DIODE ZENER 5.6V 5W AXIAL
Packaging: Bulk
Tolerance: ±5%
Package / Case: T-18, Axial
Mounting Type: Through Hole
Operating Temperature: -65°C ~ 200°C
Voltage - Zener (Nom) (Vz): 5.6 V
Impedance (Max) (Zzt): 1 Ohms
Supplier Device Package: Axial
Power - Max: 5 W
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 1 A
Current - Reverse Leakage @ Vr: 1 µA @ 2 V
Produkt ist nicht verfügbar
Im Einkaufswagen
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| MC14042BDR2G |
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Hersteller: onsemi
Description: IC D-TYPE TRANSP 1:1 16-SOIC
Packaging: Tape & Reel (TR)
Package / Case: 16-SOIC (0.154", 3.90mm Width)
Output Type: Differential
Mounting Type: Surface Mount
Circuit: 1:1
Logic Type: D-Type Transparent Latch
Operating Temperature: -55°C ~ 125°C
Voltage - Supply: 3V ~ 18V
Independent Circuits: 4
Current - Output High, Low: 8.8mA, 8.8mA
Delay Time - Propagation: 60ns
Supplier Device Package: 16-SOIC
Description: IC D-TYPE TRANSP 1:1 16-SOIC
Packaging: Tape & Reel (TR)
Package / Case: 16-SOIC (0.154", 3.90mm Width)
Output Type: Differential
Mounting Type: Surface Mount
Circuit: 1:1
Logic Type: D-Type Transparent Latch
Operating Temperature: -55°C ~ 125°C
Voltage - Supply: 3V ~ 18V
Independent Circuits: 4
Current - Output High, Low: 8.8mA, 8.8mA
Delay Time - Propagation: 60ns
Supplier Device Package: 16-SOIC
auf Bestellung 7500 Stücke:
Lieferzeit 10-14 Tag (e)| Anzahl | Preis |
|---|---|
| 2500+ | 0.35 EUR |
| 5000+ | 0.34 EUR |
| 7500+ | 0.33 EUR |
| MC14042BDR2G |
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Hersteller: onsemi
Description: IC D-TYPE TRANSP 1:1 16-SOIC
Packaging: Cut Tape (CT)
Package / Case: 16-SOIC (0.154", 3.90mm Width)
Output Type: Differential
Mounting Type: Surface Mount
Circuit: 1:1
Logic Type: D-Type Transparent Latch
Operating Temperature: -55°C ~ 125°C
Voltage - Supply: 3V ~ 18V
Independent Circuits: 4
Current - Output High, Low: 8.8mA, 8.8mA
Delay Time - Propagation: 60ns
Supplier Device Package: 16-SOIC
Description: IC D-TYPE TRANSP 1:1 16-SOIC
Packaging: Cut Tape (CT)
Package / Case: 16-SOIC (0.154", 3.90mm Width)
Output Type: Differential
Mounting Type: Surface Mount
Circuit: 1:1
Logic Type: D-Type Transparent Latch
Operating Temperature: -55°C ~ 125°C
Voltage - Supply: 3V ~ 18V
Independent Circuits: 4
Current - Output High, Low: 8.8mA, 8.8mA
Delay Time - Propagation: 60ns
Supplier Device Package: 16-SOIC
auf Bestellung 9894 Stücke:
Lieferzeit 10-14 Tag (e)| Anzahl | Preis |
|---|---|
| 23+ | 0.77 EUR |
| 33+ | 0.55 EUR |
| 36+ | 0.49 EUR |
| 100+ | 0.43 EUR |
| 250+ | 0.4 EUR |
| 500+ | 0.38 EUR |
| 1000+ | 0.37 EUR |
| MC14532BDR2G |
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Hersteller: onsemi
Description: IC PRIORITY ENCODER 1X8:3 16SOIC
Packaging: Tape & Reel (TR)
Package / Case: 16-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Circuit: 1 x 8:3
Type: Priority Encoder
Operating Temperature: -55°C ~ 125°C
Voltage - Supply: 3V ~ 18V
Independent Circuits: 1
Current - Output High, Low: 8.8mA, 8.8mA
Voltage Supply Source: Dual Supply
Supplier Device Package: 16-SOIC
Description: IC PRIORITY ENCODER 1X8:3 16SOIC
Packaging: Tape & Reel (TR)
Package / Case: 16-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Circuit: 1 x 8:3
Type: Priority Encoder
Operating Temperature: -55°C ~ 125°C
Voltage - Supply: 3V ~ 18V
Independent Circuits: 1
Current - Output High, Low: 8.8mA, 8.8mA
Voltage Supply Source: Dual Supply
Supplier Device Package: 16-SOIC
Produkt ist nicht verfügbar
Im Einkaufswagen
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| MC14532BDR2G |
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Hersteller: onsemi
Description: IC PRIORITY ENCODER 1X8:3 16SOIC
Packaging: Cut Tape (CT)
Package / Case: 16-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Circuit: 1 x 8:3
Type: Priority Encoder
Operating Temperature: -55°C ~ 125°C
Voltage - Supply: 3V ~ 18V
Independent Circuits: 1
Current - Output High, Low: 8.8mA, 8.8mA
Voltage Supply Source: Dual Supply
Supplier Device Package: 16-SOIC
Description: IC PRIORITY ENCODER 1X8:3 16SOIC
Packaging: Cut Tape (CT)
Package / Case: 16-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Circuit: 1 x 8:3
Type: Priority Encoder
Operating Temperature: -55°C ~ 125°C
Voltage - Supply: 3V ~ 18V
Independent Circuits: 1
Current - Output High, Low: 8.8mA, 8.8mA
Voltage Supply Source: Dual Supply
Supplier Device Package: 16-SOIC
auf Bestellung 2150 Stücke:
Lieferzeit 10-14 Tag (e)| Anzahl | Preis |
|---|---|
| 22+ | 0.83 EUR |
| 30+ | 0.59 EUR |
| 34+ | 0.53 EUR |
| 100+ | 0.46 EUR |
| 250+ | 0.43 EUR |
| 500+ | 0.41 EUR |
| 1000+ | 0.4 EUR |
| MC14022BDR2G |
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Hersteller: onsemi
Description: IC BINARY COUNTER 4-BIT 16SOIC
Packaging: Tape & Reel (TR)
Package / Case: 16-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Number of Elements: 1
Logic Type: Binary Counter
Reset: Asynchronous
Operating Temperature: -55°C ~ 125°C
Direction: Up
Trigger Type: Positive Edge
Supplier Device Package: 16-SOIC
Voltage - Supply: 3 V ~ 18 V
Count Rate: 16 MHz
Number of Bits per Element: 4
Description: IC BINARY COUNTER 4-BIT 16SOIC
Packaging: Tape & Reel (TR)
Package / Case: 16-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Number of Elements: 1
Logic Type: Binary Counter
Reset: Asynchronous
Operating Temperature: -55°C ~ 125°C
Direction: Up
Trigger Type: Positive Edge
Supplier Device Package: 16-SOIC
Voltage - Supply: 3 V ~ 18 V
Count Rate: 16 MHz
Number of Bits per Element: 4
auf Bestellung 2500 Stücke:
Lieferzeit 10-14 Tag (e)| Anzahl | Preis |
|---|---|
| 2500+ | 0.41 EUR |
| MC14022BDR2G |
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Hersteller: onsemi
Description: IC BINARY COUNTER 4-BIT 16SOIC
Packaging: Cut Tape (CT)
Package / Case: 16-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Number of Elements: 1
Logic Type: Binary Counter
Reset: Asynchronous
Operating Temperature: -55°C ~ 125°C
Direction: Up
Trigger Type: Positive Edge
Supplier Device Package: 16-SOIC
Voltage - Supply: 3 V ~ 18 V
Count Rate: 16 MHz
Number of Bits per Element: 4
Description: IC BINARY COUNTER 4-BIT 16SOIC
Packaging: Cut Tape (CT)
Package / Case: 16-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Number of Elements: 1
Logic Type: Binary Counter
Reset: Asynchronous
Operating Temperature: -55°C ~ 125°C
Direction: Up
Trigger Type: Positive Edge
Supplier Device Package: 16-SOIC
Voltage - Supply: 3 V ~ 18 V
Count Rate: 16 MHz
Number of Bits per Element: 4
auf Bestellung 4386 Stücke:
Lieferzeit 10-14 Tag (e)| Anzahl | Preis |
|---|---|
| 20+ | 0.92 EUR |
| 28+ | 0.65 EUR |
| 31+ | 0.58 EUR |
| 100+ | 0.51 EUR |
| 250+ | 0.47 EUR |
| 500+ | 0.45 EUR |
| 1000+ | 0.44 EUR |
| MC14517BDWR2G |
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Hersteller: onsemi
Description: IC SR TRI-STATE 64BIT 16-SOIC
Packaging: Tape & Reel (TR)
Package / Case: 16-SOIC (0.295", 7.50mm Width)
Output Type: Tri-State
Mounting Type: Surface Mount
Number of Elements: 2
Function: Serial to Parallel
Logic Type: Shift Register
Operating Temperature: -55°C ~ 125°C
Voltage - Supply: 3V ~ 18V
Supplier Device Package: 16-SOIC
Number of Bits per Element: 64
Description: IC SR TRI-STATE 64BIT 16-SOIC
Packaging: Tape & Reel (TR)
Package / Case: 16-SOIC (0.295", 7.50mm Width)
Output Type: Tri-State
Mounting Type: Surface Mount
Number of Elements: 2
Function: Serial to Parallel
Logic Type: Shift Register
Operating Temperature: -55°C ~ 125°C
Voltage - Supply: 3V ~ 18V
Supplier Device Package: 16-SOIC
Number of Bits per Element: 64
auf Bestellung 3000 Stücke:
Lieferzeit 10-14 Tag (e)| Anzahl | Preis |
|---|---|
| 1000+ | 1.04 EUR |
| 2000+ | 1.01 EUR |
| 3000+ | 0.99 EUR |
| MC14517BDWR2G |
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Hersteller: onsemi
Description: IC SR TRI-STATE 64BIT 16-SOIC
Packaging: Cut Tape (CT)
Package / Case: 16-SOIC (0.295", 7.50mm Width)
Output Type: Tri-State
Mounting Type: Surface Mount
Number of Elements: 2
Function: Serial to Parallel
Logic Type: Shift Register
Operating Temperature: -55°C ~ 125°C
Voltage - Supply: 3V ~ 18V
Supplier Device Package: 16-SOIC
Number of Bits per Element: 64
Description: IC SR TRI-STATE 64BIT 16-SOIC
Packaging: Cut Tape (CT)
Package / Case: 16-SOIC (0.295", 7.50mm Width)
Output Type: Tri-State
Mounting Type: Surface Mount
Number of Elements: 2
Function: Serial to Parallel
Logic Type: Shift Register
Operating Temperature: -55°C ~ 125°C
Voltage - Supply: 3V ~ 18V
Supplier Device Package: 16-SOIC
Number of Bits per Element: 64
auf Bestellung 4537 Stücke:
Lieferzeit 10-14 Tag (e)| Anzahl | Preis |
|---|---|
| 9+ | 2.04 EUR |
| 12+ | 1.49 EUR |
| 25+ | 1.35 EUR |
| 100+ | 1.19 EUR |
| 250+ | 1.12 EUR |
| 500+ | 1.09 EUR |
| GBPC2510W |
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Hersteller: onsemi
Description: BRIDGE RECT 1P 1KV 25A GBPC-W
Packaging: Bulk
Package / Case: 4-Square, GBPC-W
Mounting Type: Through Hole
Diode Type: Single Phase
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: GBPC-W
Voltage - Peak Reverse (Max): 1 kV
Current - Average Rectified (Io): 25 A
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 12.5 A
Current - Reverse Leakage @ Vr: 5 µA @ 1000 V
Description: BRIDGE RECT 1P 1KV 25A GBPC-W
Packaging: Bulk
Package / Case: 4-Square, GBPC-W
Mounting Type: Through Hole
Diode Type: Single Phase
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: GBPC-W
Voltage - Peak Reverse (Max): 1 kV
Current - Average Rectified (Io): 25 A
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 12.5 A
Current - Reverse Leakage @ Vr: 5 µA @ 1000 V
auf Bestellung 100 Stücke:
Lieferzeit 10-14 Tag (e)| Anzahl | Preis |
|---|---|
| 2+ | 11.67 EUR |
| 10+ | 7.93 EUR |
| 100+ | 5.81 EUR |
| FSB560 |
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Hersteller: onsemi
Description: TRANS NPN 60V 2A SOT-23-3
Packaging: Bulk
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: -55°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 350mV @ 200mA, 2A
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 500mA, 2V
Frequency - Transition: 75MHz
Supplier Device Package: SOT-23-3
Current - Collector (Ic) (Max): 2 A
Voltage - Collector Emitter Breakdown (Max): 60 V
Power - Max: 500 mW
Description: TRANS NPN 60V 2A SOT-23-3
Packaging: Bulk
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: -55°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 350mV @ 200mA, 2A
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 500mA, 2V
Frequency - Transition: 75MHz
Supplier Device Package: SOT-23-3
Current - Collector (Ic) (Max): 2 A
Voltage - Collector Emitter Breakdown (Max): 60 V
Power - Max: 500 mW
auf Bestellung 30116 Stücke:
Lieferzeit 10-14 Tag (e)| Anzahl | Preis |
|---|---|
| 1324+ | 0.35 EUR |
| NSVMUN5333DW1T3G |
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Hersteller: onsemi
Description: TRANS PREBIAS 1NPN 1PNP SOT-363
Packaging: Tape & Reel (TR)
Package / Case: 6-TSSOP, SC-88, SOT-363
Mounting Type: Surface Mount
Transistor Type: 1 NPN, 1 PNP - Pre-Biased (Dual)
Power - Max: 250mW
Current - Collector (Ic) (Max): 100mA
Voltage - Collector Emitter Breakdown (Max): 50V
Vce Saturation (Max) @ Ib, Ic: 250mV @ 1mA, 10mA
Current - Collector Cutoff (Max): 500nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 5mA, 10V
Resistor - Base (R1): 4.7kOhms
Resistor - Emitter Base (R2): 47kOhms
Supplier Device Package: SC-88/SC70-6/SOT-363
Grade: Automotive
Qualification: AEC-Q101
Description: TRANS PREBIAS 1NPN 1PNP SOT-363
Packaging: Tape & Reel (TR)
Package / Case: 6-TSSOP, SC-88, SOT-363
Mounting Type: Surface Mount
Transistor Type: 1 NPN, 1 PNP - Pre-Biased (Dual)
Power - Max: 250mW
Current - Collector (Ic) (Max): 100mA
Voltage - Collector Emitter Breakdown (Max): 50V
Vce Saturation (Max) @ Ib, Ic: 250mV @ 1mA, 10mA
Current - Collector Cutoff (Max): 500nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 5mA, 10V
Resistor - Base (R1): 4.7kOhms
Resistor - Emitter Base (R2): 47kOhms
Supplier Device Package: SC-88/SC70-6/SOT-363
Grade: Automotive
Qualification: AEC-Q101
Produkt ist nicht verfügbar
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Stück im Wert von UAH
























