| Foto | Bezeichnung | Hersteller | Beschreibung |
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74LVTH573WMX | onsemi |
Description: IC D-TYPE TRANSP 8:8 20-SOICPackaging: Tape & Reel (TR) Package / Case: 20-SOIC (0.295", 7.50mm Width) Output Type: Tri-State Mounting Type: Surface Mount Circuit: 8:8 Logic Type: D-Type Transparent Latch Operating Temperature: -40°C ~ 85°C Voltage - Supply: 2.7V ~ 3.6V Independent Circuits: 1 Current - Output High, Low: 32mA, 64mA Delay Time - Propagation: 4.4ns Supplier Device Package: 20-SOIC |
Produkt ist nicht verfügbar |
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NTMFS4835NT1G | onsemi |
Description: MOSFET N-CH 30V 13A/130A 5DFNPackaging: Bulk Package / Case: 8-PowerTDFN, 5 Leads Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 13A (Ta), 130A (Tc) Rds On (Max) @ Id, Vgs: 3.5mOhm @ 30A, 10V Power Dissipation (Max): 890mW (Ta), 62.5W (Tc) Vgs(th) (Max) @ Id: 2.5V @ 250µA Supplier Device Package: 5-DFN (5x6) (8-SOFL) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 11.5V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 52 nC @ 11.5 V Input Capacitance (Ciss) (Max) @ Vds: 3100 pF @ 12 V |
auf Bestellung 794741 Stücke: Lieferzeit 10-14 Tag (e) |
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FDZ293P | onsemi |
Description: MOSFET P-CH 20V 4.6A 9BGAPackaging: Tape & Reel (TR) Package / Case: 9-VFBGA Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 4.6A (Ta) Rds On (Max) @ Id, Vgs: 46mOhm @ 4.6A, 4.5V Power Dissipation (Max): 1.7W (Ta) Vgs(th) (Max) @ Id: 1.5V @ 250µA Supplier Device Package: 9-BGA (1.5x1.6) Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V Vgs (Max): ±12V Drain to Source Voltage (Vdss): 20 V Gate Charge (Qg) (Max) @ Vgs: 11 nC @ 4.5 V Input Capacitance (Ciss) (Max) @ Vds: 754 pF @ 10 V |
Produkt ist nicht verfügbar |
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SMMUN2114LT1G | onsemi |
Description: TRANS PREBIAS PNP 50V SOT23-3Packaging: Bulk Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Transistor Type: PNP - Pre-Biased Vce Saturation (Max) @ Ib, Ic: 250mV @ 300µA, 10mA Current - Collector Cutoff (Max): 500nA DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 5mA, 10V Supplier Device Package: SOT-23-3 (TO-236) Grade: Automotive Current - Collector (Ic) (Max): 100 mA Voltage - Collector Emitter Breakdown (Max): 50 V Power - Max: 246 mW Resistor - Base (R1): 10 kOhms Resistor - Emitter Base (R2): 47 kOhms Qualification: AEC-Q101 Resistors Included: R1 and R2 |
auf Bestellung 76202 Stücke: Lieferzeit 10-14 Tag (e) |
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NLV74HCT32ADTR2G | onsemi |
Description: IC GATE OR 4CH 2-INP 14TSSOPPackaging: Bulk Package / Case: 14-TSSOP (0.173", 4.40mm Width) Mounting Type: Surface Mount Logic Type: OR Gate Operating Temperature: -55°C ~ 125°C Voltage - Supply: 2V ~ 6V Current - Output High, Low: 4mA, 4mA Number of Inputs: 2 Supplier Device Package: 14-TSSOP Input Logic Level - High: 3.98V ~ 5.4V Input Logic Level - Low: 0.1V ~ 0.26V Max Propagation Delay @ V, Max CL: 15ns @ 5V, 50pF Grade: Automotive Number of Circuits: 4 Current - Quiescent (Max): 1 µA Qualification: AEC-Q100 |
auf Bestellung 36792 Stücke: Lieferzeit 10-14 Tag (e) |
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MC74HCT32ADG | onsemi |
Description: IC GATE OR 4CH 2-INP 14SOICPackaging: Bulk Package / Case: 14-SOIC (0.154", 3.90mm Width) Mounting Type: Surface Mount Logic Type: OR Gate Operating Temperature: -55°C ~ 125°C Voltage - Supply: 4.5V ~ 5.5V Current - Output High, Low: 4mA, 4mA Number of Inputs: 2 Supplier Device Package: 14-SOIC Input Logic Level - High: 2V Input Logic Level - Low: 0.8V Max Propagation Delay @ V, Max CL: 15ns @ 5V, 50pF Number of Circuits: 4 Current - Quiescent (Max): 1 µA |
auf Bestellung 25280 Stücke: Lieferzeit 10-14 Tag (e) |
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TIP141 | onsemi |
Description: TRANS NPN 80V 10A TO-218Packaging: Tube Package / Case: TO-218-3 Mounting Type: Through Hole Transistor Type: NPN Operating Temperature: -65°C ~ 150°C (TJ) DC Current Gain (hFE) (Min) @ Ic, Vce: 1000 @ 5A, 4V Supplier Device Package: TO-218 Current - Collector (Ic) (Max): 10 A Voltage - Collector Emitter Breakdown (Max): 80 V Power - Max: 125 W |
auf Bestellung 559 Stücke: Lieferzeit 10-14 Tag (e) |
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| TIP141 | onsemi |
Description: TRANS NPN DARL 80V 10A SOT-93Packaging: Bulk Package / Case: TO-218-3 Mounting Type: Through Hole Transistor Type: NPN - Darlington Operating Temperature: -65°C ~ 150°C Vce Saturation (Max) @ Ib, Ic: 3V @ 40mA, 10A Current - Collector Cutoff (Max): 2mA DC Current Gain (hFE) (Min) @ Ic, Vce: 1000 @ 5A, 4V Frequency - Transition: 4MHz Supplier Device Package: SOT-93 Current - Collector (Ic) (Max): 10 A Voltage - Collector Emitter Breakdown (Max): 80 V Power - Max: 125 W |
Produkt ist nicht verfügbar |
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MURF1660CT | onsemi |
Description: DIODE ARRAY GP 600V 8A TO-220FPPackaging: Tube Package / Case: TO-220-3 Full Pack Mounting Type: Through Hole Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 60 ns Technology: Standard Diode Configuration: 1 Pair Common Cathode Current - Average Rectified (Io) (per Diode): 8A Supplier Device Package: TO-220FP Operating Temperature - Junction: -65°C ~ 150°C Voltage - DC Reverse (Vr) (Max): 600 V Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 8 A Current - Reverse Leakage @ Vr: 10 µA @ 600 V |
Produkt ist nicht verfügbar |
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KSC5039FTU | onsemi |
Description: TRANS NPN 400V 5A TO-220F-3Packaging: Tube Package / Case: TO-220-3 Full Pack Mounting Type: Through Hole Transistor Type: NPN Operating Temperature: 150°C (TJ) Vce Saturation (Max) @ Ib, Ic: 1.5V @ 500mA, 2.5A Current - Collector Cutoff (Max): 10µA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 10 @ 300mA, 5V Frequency - Transition: 10MHz Supplier Device Package: TO-220F-3 Current - Collector (Ic) (Max): 5 A Voltage - Collector Emitter Breakdown (Max): 400 V Power - Max: 30 W |
Produkt ist nicht verfügbar |
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1N4733A-T50R | onsemi |
Description: DIODE ZENER 5.1V 1W DO41Tolerance: ±5% Packaging: Bulk Package / Case: DO-204AL, DO-41, Axial Mounting Type: Through Hole Operating Temperature: -65°C ~ 200°C Voltage - Zener (Nom) (Vz): 5.1 V Impedance (Max) (Zzt): 7 Ohms Supplier Device Package: DO-41 Power - Max: 1 W Current - Reverse Leakage @ Vr: 10 µA @ 1 V |
auf Bestellung 12000 Stücke: Lieferzeit 10-14 Tag (e) |
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1N4733A-T50R | onsemi |
Description: DIODE ZENER 5.1V 1W DO41Tolerance: ±5% Packaging: Tape & Reel (TR) Package / Case: DO-204AL, DO-41, Axial Mounting Type: Through Hole Operating Temperature: -65°C ~ 200°C Voltage - Zener (Nom) (Vz): 5.1 V Impedance (Max) (Zzt): 7 Ohms Supplier Device Package: DO-41 Power - Max: 1 W Current - Reverse Leakage @ Vr: 10 µA @ 1 V |
Produkt ist nicht verfügbar |
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NCV2931AST-5T3G | onsemi |
Description: IC REG LINEAR 5V 100MA SOT-223Packaging: Tape & Reel (TR) Package / Case: TO-261-4, TO-261AA Output Type: Fixed Mounting Type: Surface Mount Current - Output: 100mA Operating Temperature: -40°C ~ 125°C Output Configuration: Positive Current - Quiescent (Iq): 1 mA Voltage - Input (Max): 26V Number of Regulators: 1 Supplier Device Package: SOT-223 Voltage - Output (Min/Fixed): 5V Grade: Automotive PSRR: 90dB (120Hz) Voltage Dropout (Max): 0.6V @ 100mA Protection Features: Over Current, Over Temperature Current - Supply (Max): 30 mA Qualification: AEC-Q100 |
auf Bestellung 44000 Stücke: Lieferzeit 10-14 Tag (e) |
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NCV2931AST-5T3G | onsemi |
Description: IC REG LINEAR 5V 100MA SOT-223Packaging: Cut Tape (CT) Package / Case: TO-261-4, TO-261AA Output Type: Fixed Mounting Type: Surface Mount Current - Output: 100mA Operating Temperature: -40°C ~ 125°C Output Configuration: Positive Current - Quiescent (Iq): 1 mA Voltage - Input (Max): 26V Number of Regulators: 1 Supplier Device Package: SOT-223 Voltage - Output (Min/Fixed): 5V Grade: Automotive PSRR: 90dB (120Hz) Voltage Dropout (Max): 0.6V @ 100mA Protection Features: Over Current, Over Temperature Current - Supply (Max): 30 mA Qualification: AEC-Q100 |
auf Bestellung 44738 Stücke: Lieferzeit 10-14 Tag (e) |
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SBRA401NT3G | onsemi |
Description: DIODE SCHOTTKY 40V 1A SMAPackaging: Bulk Package / Case: DO-214AC, SMA Mounting Type: Surface Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Technology: Schottky Current - Average Rectified (Io): 1A Supplier Device Package: SMA Operating Temperature - Junction: -55°C ~ 125°C Grade: Automotive Voltage - DC Reverse (Vr) (Max): 40 V Voltage - Forward (Vf) (Max) @ If: 550 mV @ 1 A Current - Reverse Leakage @ Vr: 500 µA @ 40 V Qualification: AEC-Q101 |
Produkt ist nicht verfügbar |
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DM74ALS573BWMX | onsemi |
Description: IC D-TYPE TRANSP 8:8 20-SOICPackaging: Tape & Reel (TR) Package / Case: 20-SOIC (0.295", 7.50mm Width) Output Type: Tri-State Mounting Type: Surface Mount Circuit: 8:8 Logic Type: D-Type Transparent Latch Operating Temperature: 0°C ~ 70°C Voltage - Supply: 4.5V ~ 5.5V Independent Circuits: 1 Current - Output High, Low: 2.6mA, 24mA Delay Time - Propagation: 2ns Supplier Device Package: 20-SOIC |
Produkt ist nicht verfügbar |
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DM74ALS573BWM | onsemi |
Description: IC D-TYPE TRANSP 8:8 20-SOICPackaging: Tube Package / Case: 20-SOIC (0.295", 7.50mm Width) Output Type: Tri-State Mounting Type: Surface Mount Circuit: 8:8 Logic Type: D-Type Transparent Latch Operating Temperature: 0°C ~ 70°C Voltage - Supply: 4.5V ~ 5.5V Independent Circuits: 1 Current - Output High, Low: 2.6mA, 24mA Delay Time - Propagation: 2ns Supplier Device Package: 20-SOIC |
Produkt ist nicht verfügbar |
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NB3L202KMNGEVB | onsemi |
Description: EVAL BOARD FOR NB3L202KPackaging: Box Function: Clock Buffer Type: Timing Contents: Board(s) Utilized IC / Part: NB3L202K |
auf Bestellung 1 Stücke: Lieferzeit 10-14 Tag (e) |
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| 5085-2N4416A | onsemi |
Description: SMALL SIGNAL PRODUCTS Packaging: Bulk |
Produkt ist nicht verfügbar |
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NOIV1SE025KA-GTI | onsemi |
Description: IC IMAGE SENSOR 25MP 355UPGAPackaging: Tray Package / Case: 355-BSPGA, Window Type: CMOS Operating Temperature: -40°C ~ 85°C (TJ) Voltage - Supply: 1.6V ~ 2V, 3V ~ 3.6V Pixel Size: 4.5µm x 4.5µm Active Pixel Array: 5120H x 5120V Supplier Device Package: 355-µPGA Frames per Second: 53.0 |
auf Bestellung 12 Stücke: Lieferzeit 10-14 Tag (e) |
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BF244C | onsemi |
Description: RF MOSFET JFET 15V TO92-3Packaging: Bulk Package / Case: TO-226-3, TO-92-3 (TO-226AA) Current Rating (Amps): 50mA Mounting Type: Through Hole Frequency: 100MHz Configuration: N-Channel Technology: JFET Noise Figure: 1.5dB Supplier Device Package: TO-92-3 Voltage - Rated: 30 V Voltage - Test: 15 V |
Produkt ist nicht verfügbar |
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TL074ACN | onsemi |
Description: IC OPAMP JFET 4 CIRCUIT 14DIPPackaging: Tube Package / Case: 14-DIP (0.300", 7.62mm) Mounting Type: Through Hole Amplifier Type: J-FET Operating Temperature: 0°C ~ 70°C (TA) Current - Supply: 1.4mA (x4 Channels) Slew Rate: 13V/µs Gain Bandwidth Product: 5.25 MHz Current - Input Bias: 65 pA Voltage - Input Offset: 3 mV Supplier Device Package: 14-PDIP Number of Circuits: 4 Current - Output / Channel: 40 mA Voltage - Supply Span (Min): 10 V Voltage - Supply Span (Max): 30 V |
auf Bestellung 63962 Stücke: Lieferzeit 10-14 Tag (e) |
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TIP32C | onsemi |
Description: TRANS PNP 100V 3A TO-220Packaging: Tube Package / Case: TO-220-3 Mounting Type: Through Hole Transistor Type: PNP Operating Temperature: -65°C ~ 150°C (TJ) Vce Saturation (Max) @ Ib, Ic: 1.2V @ 375mA, 3A Current - Collector Cutoff (Max): 300µA DC Current Gain (hFE) (Min) @ Ic, Vce: 10 @ 3A, 4V Frequency - Transition: 3MHz Supplier Device Package: TO-220 Current - Collector (Ic) (Max): 3 A Voltage - Collector Emitter Breakdown (Max): 100 V Power - Max: 2 W |
auf Bestellung 107342 Stücke: Lieferzeit 10-14 Tag (e) |
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TIP32C | onsemi |
Description: TRANS PNP 100V 3A TO-220Packaging: Tube Package / Case: TO-220-3 Mounting Type: Through Hole Transistor Type: PNP Operating Temperature: -65°C ~ 150°C (TJ) Vce Saturation (Max) @ Ib, Ic: 1.2V @ 375mA, 3A Current - Collector Cutoff (Max): 300µA DC Current Gain (hFE) (Min) @ Ic, Vce: 10 @ 3A, 4V Frequency - Transition: 3MHz Supplier Device Package: TO-220 Current - Collector (Ic) (Max): 3 A Voltage - Collector Emitter Breakdown (Max): 100 V Power - Max: 2 W |
Produkt ist nicht verfügbar |
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TIP115 | onsemi |
Description: TRANS PNP DARL 60V 2A TO-220-3Packaging: Bulk Package / Case: TO-220-3 Mounting Type: Through Hole Transistor Type: PNP - Darlington Operating Temperature: 150°C (TJ) Vce Saturation (Max) @ Ib, Ic: 2.5V @ 8mA, 2A Current - Collector Cutoff (Max): 2mA DC Current Gain (hFE) (Min) @ Ic, Vce: 1000 @ 1A, 4V Supplier Device Package: TO-220-3 Current - Collector (Ic) (Max): 2 A Voltage - Collector Emitter Breakdown (Max): 60 V Power - Max: 2 W |
Produkt ist nicht verfügbar |
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TIP115 | onsemi |
Description: TRANS PNP DARL 60V 2A TO-220-3Packaging: Tube Package / Case: TO-220-3 Mounting Type: Through Hole Transistor Type: PNP - Darlington Operating Temperature: 150°C (TJ) Vce Saturation (Max) @ Ib, Ic: 2.5V @ 8mA, 2A Current - Collector Cutoff (Max): 2mA DC Current Gain (hFE) (Min) @ Ic, Vce: 1000 @ 1A, 4V Supplier Device Package: TO-220-3 Current - Collector (Ic) (Max): 2 A Voltage - Collector Emitter Breakdown (Max): 60 V Power - Max: 2 W |
auf Bestellung 4638 Stücke: Lieferzeit 10-14 Tag (e) |
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TIP137 | onsemi |
Description: TRANS PNP DARL 100V 8A TO-220ABPackaging: Tube Package / Case: TO-220-3 Mounting Type: Through Hole Transistor Type: PNP - Darlington Operating Temperature: 150°C (TJ) Vce Saturation (Max) @ Ib, Ic: 4V @ 30mA, 6A Current - Collector Cutoff (Max): 500µA DC Current Gain (hFE) (Min) @ Ic, Vce: 1000 @ 4A, 4V Supplier Device Package: TO-220AB Current - Collector (Ic) (Max): 8 A Voltage - Collector Emitter Breakdown (Max): 100 V Power - Max: 2 W |
auf Bestellung 20727 Stücke: Lieferzeit 10-14 Tag (e) |
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TIP42C | onsemi |
Description: TRANS PNP 100V 6A TO-220-3Packaging: Bulk Package / Case: TO-220-3 Mounting Type: Through Hole Transistor Type: PNP Operating Temperature: 150°C (TJ) Vce Saturation (Max) @ Ib, Ic: 1.5V @ 600mA, 6A Current - Collector Cutoff (Max): 700µA DC Current Gain (hFE) (Min) @ Ic, Vce: 15 @ 3A, 4V Frequency - Transition: 3MHz Supplier Device Package: TO-220-3 Current - Collector (Ic) (Max): 6 A Voltage - Collector Emitter Breakdown (Max): 100 V Power - Max: 2 W |
Produkt ist nicht verfügbar |
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TIP42A | onsemi |
Description: TRANS PNP 80V 6A TO-220Packaging: Bulk Package / Case: TO-220-3 Mounting Type: Through Hole Transistor Type: PNP Operating Temperature: 150°C (TJ) Vce Saturation (Max) @ Ib, Ic: 1.5V @ 600mA, 6A Current - Collector Cutoff (Max): 700µA DC Current Gain (hFE) (Min) @ Ic, Vce: 30 @ 300mA, 4V Frequency - Transition: 3MHz Supplier Device Package: TO-220 Current - Collector (Ic) (Max): 6 A Voltage - Collector Emitter Breakdown (Max): 80 V Power - Max: 2 W |
Produkt ist nicht verfügbar |
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NVMFS6H848NLT1G | onsemi |
Description: MOSFET N-CH 80V 13A/59A 5DFNPackaging: Cut Tape (CT) Package / Case: 8-PowerTDFN, 5 Leads Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 13A (Ta), 59A (Tc) Rds On (Max) @ Id, Vgs: 8.8mOhm @ 10A, 10V Power Dissipation (Max): 3.7W (Ta), 73W (Tc) Vgs(th) (Max) @ Id: 2V @ 70µA Supplier Device Package: 5-DFN (5x6) (8-SOFL) Grade: Automotive Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 80 V Gate Charge (Qg) (Max) @ Vgs: 25 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1420 pF @ 40 V Qualification: AEC-Q101 |
auf Bestellung 474 Stücke: Lieferzeit 10-14 Tag (e) |
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BCP53 | onsemi |
Description: TRANS PNP 80V 1.2A SOT-223-4Packaging: Tape & Reel (TR) Package / Case: TO-261-4, TO-261AA Mounting Type: Surface Mount Transistor Type: PNP Operating Temperature: -55°C ~ 150°C (TJ) Vce Saturation (Max) @ Ib, Ic: 500mV @ 50mA, 500mA Current - Collector Cutoff (Max): 100nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 150mA, 2V Supplier Device Package: SOT-223-4 Current - Collector (Ic) (Max): 1.2 A Voltage - Collector Emitter Breakdown (Max): 80 V Power - Max: 1.5 W |
Produkt ist nicht verfügbar |
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NCP1028P100G | onsemi |
Description: IC OFFLINE SWITCH FLYBACK 7DIPPackaging: Bulk Package / Case: 8-DIP (0.300", 7.62mm), 7 Leads Mounting Type: Through Hole Operating Temperature: 0°C ~ 125°C (TJ) Duty Cycle: 80% Frequency - Switching: 100kHz Internal Switch(s): Yes Voltage - Breakdown: 700V Output Isolation: Isolated Topology: Flyback Voltage - Supply (Vcc/Vdd): 7.2V ~ 10V Supplier Device Package: 7-PDIP Fault Protection: Over Power, Short Circuit Voltage - Start Up: 8.5 V Power (Watts): 25 W |
auf Bestellung 9255 Stücke: Lieferzeit 10-14 Tag (e) |
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NTMFS4C025NT3G | onsemi |
Description: MOSFET N-CH 30V 20A/69A 5DFNPackaging: Tape & Reel (TR) Package / Case: 8-PowerTDFN, 5 Leads Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 20A (Ta), 69A (Tc) Rds On (Max) @ Id, Vgs: 3.41mOhm @ 30A, 10V Power Dissipation (Max): 2.55W (Ta), 30.5W (Tc) Vgs(th) (Max) @ Id: 2.1V @ 250µA Supplier Device Package: 5-DFN (5x6) (8-SOFL) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 26 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1683 pF @ 15 V |
auf Bestellung 5000 Stücke: Lieferzeit 10-14 Tag (e) |
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NTMFS4C025NT3G | onsemi |
Description: MOSFET N-CH 30V 20A/69A 5DFNPackaging: Cut Tape (CT) Package / Case: 8-PowerTDFN, 5 Leads Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 20A (Ta), 69A (Tc) Rds On (Max) @ Id, Vgs: 3.41mOhm @ 30A, 10V Power Dissipation (Max): 2.55W (Ta), 30.5W (Tc) Vgs(th) (Max) @ Id: 2.1V @ 250µA Supplier Device Package: 5-DFN (5x6) (8-SOFL) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 26 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1683 pF @ 15 V |
auf Bestellung 5000 Stücke: Lieferzeit 10-14 Tag (e) |
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NTMFS4C806NT1G | onsemi |
Description: MOSFET N-CH 30V 5DFN Packaging: Tape & Reel (TR) Package / Case: 8-PowerTDFN, 5 Leads Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 11A (Ta), 69A (Tc) Rds On (Max) @ Id, Vgs: 3.41mOhm @ 30A, 10V Power Dissipation (Max): 770mW (Ta), 30.5W (Tc) Vgs(th) (Max) @ Id: 2.1V @ 250µA Supplier Device Package: 5-DFN (5x6) (8-SOFL) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 11.6 nC @ 4.5 V Input Capacitance (Ciss) (Max) @ Vds: 1683 pF @ 15 V |
Produkt ist nicht verfügbar |
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NOIX2SE9400B-LTI1 | onsemi |
Description: XGS9.4MP, 12PORT, COLOR 0Packaging: Tray Package / Case: 163-BCLGA Type: CMOS Operating Temperature: -40°C ~ 85°C (TJ) Voltage - Supply: 1.7V ~ 1.9V, 2.7V ~ 2.9V Pixel Size: 3.2µm x 3.2µm Active Pixel Array: 3072H x 3072V Supplier Device Package: 163-CLGA (20.88x19.9) Frames per Second: 90.0 |
auf Bestellung 8 Stücke: Lieferzeit 10-14 Tag (e) |
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NOIX2SN9400B-LTI1 | onsemi |
Description: XGS9.4MP, 12PORT, MONO 0DPackaging: Tray Package / Case: 163-BCLGA Type: CMOS Operating Temperature: -40°C ~ 85°C (TJ) Voltage - Supply: 1.7V ~ 1.9V, 2.7V ~ 2.9V Pixel Size: 3.2µm x 3.2µm Active Pixel Array: 3072H x 3072V Supplier Device Package: 163-CLGA (20.88x19.9) Frames per Second: 90.0 |
auf Bestellung 3 Stücke: Lieferzeit 10-14 Tag (e) |
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NOIX2SE9400B-LTI | onsemi |
Description: XGS9.4MP, 12PORT, COLOR 0Packaging: Tray Package / Case: 163-BCLGA Type: CMOS Operating Temperature: -40°C ~ 85°C (TJ) Voltage - Supply: 1.7V ~ 1.9V, 2.7V ~ 2.9V Pixel Size: 3.2µm x 3.2µm Active Pixel Array: 3072H x 3072V Supplier Device Package: 163-CLGA (20.88x19.9) Frames per Second: 90.0 |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
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NOIX2SN9400B-LTI | onsemi |
Description: XGS9.4MP, 12PORT, MONO 0DPackaging: Tray Package / Case: 163-BCLGA Type: CMOS Operating Temperature: -40°C ~ 85°C (TJ) Voltage - Supply: 1.7V ~ 1.9V, 2.7V ~ 2.9V Pixel Size: 3.2µm x 3.2µm Active Pixel Array: 3072H x 3072V Supplier Device Package: 163-CLGA (20.88x19.9) Frames per Second: 90.0 |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
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NOIX1SE9400B-LTI | onsemi |
Description: XGS9.4MP, 24PORT, COLOR 0Packaging: Tray Package / Case: 163-BCLGA Type: CMOS Operating Temperature: -40°C ~ 85°C (TJ) Voltage - Supply: 1.7V ~ 1.9V, 2.7V ~ 2.9V Pixel Size: 3.2µm x 3.2µm Active Pixel Array: 3072H x 3072V Supplier Device Package: 163-CLGA (20.88x19.9) Frames per Second: 90.0 |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
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NOIX1SN9400B-LTI | onsemi |
Description: XGS9.4MP, 24PORT, MONO 0DPackaging: Tray Package / Case: 163-BCLGA Type: CMOS Operating Temperature: -40°C ~ 85°C (TJ) Voltage - Supply: 1.7V ~ 1.9V, 2.7V ~ 2.9V Pixel Size: 3.2µm x 3.2µm Active Pixel Array: 3072H x 3072V Supplier Device Package: 163-CLGA (20.88x19.9) Frames per Second: 90.0 |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
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MC74AC32DR2G-Q | onsemi |
Description: QUAD 2-INPUT OR GATEPackaging: Tape & Reel (TR) Package / Case: 14-SOIC (0.154", 3.90mm Width) Mounting Type: Surface Mount Logic Type: OR Gate Operating Temperature: -40°C ~ 85°C Voltage - Supply: 2V ~ 6V Current - Output High, Low: 24mA, 24mA Number of Inputs: 2 Supplier Device Package: 14-SOIC Input Logic Level - High: 2.1V ~ 3.85V Input Logic Level - Low: 0.9V ~ 1.65V Max Propagation Delay @ V, Max CL: 7.5ns @ 5V, 50pF Number of Circuits: 4 Current - Quiescent (Max): 4 µA |
auf Bestellung 2500 Stücke: Lieferzeit 10-14 Tag (e) |
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MC74AC32DR2G-Q | onsemi |
Description: QUAD 2-INPUT OR GATEPackaging: Cut Tape (CT) Package / Case: 14-SOIC (0.154", 3.90mm Width) Mounting Type: Surface Mount Logic Type: OR Gate Operating Temperature: -40°C ~ 85°C Voltage - Supply: 2V ~ 6V Current - Output High, Low: 24mA, 24mA Number of Inputs: 2 Supplier Device Package: 14-SOIC Input Logic Level - High: 2.1V ~ 3.85V Input Logic Level - Low: 0.9V ~ 1.65V Max Propagation Delay @ V, Max CL: 7.5ns @ 5V, 50pF Number of Circuits: 4 Current - Quiescent (Max): 4 µA |
auf Bestellung 2500 Stücke: Lieferzeit 10-14 Tag (e) |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
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H11D1S | onsemi |
Description: OPTOISO 5.3KV TRANS W/BASE 6-SMDPackaging: Tube Package / Case: 6-SMD, Gull Wing Output Type: Transistor with Base Mounting Type: Surface Mount Operating Temperature: -55°C ~ 100°C Voltage - Forward (Vf) (Typ): 1.15V Input Type: DC Current - Output / Channel: 100mA Voltage - Isolation: 5300Vrms Current Transfer Ratio (Min): 20% @ 10mA Vce Saturation (Max): 400mV Supplier Device Package: 6-SMD Voltage - Output (Max): 300V Turn On / Turn Off Time (Typ): 5µs, 5µs Number of Channels: 1 Current - DC Forward (If) (Max): 80 mA |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
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FDMS7682-NC | onsemi |
Description: PT7 30V/20V NCH ER TREN MPackaging: Tape & Reel (TR) Package / Case: 8-PowerTDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 16A (Ta), 22A (Tc) Rds On (Max) @ Id, Vgs: 6.3mOhm @ 14A, 10V Power Dissipation (Max): 2.5W (Ta), 33W (Tc) Vgs(th) (Max) @ Id: 3V @ 250µA Supplier Device Package: 8-PQFN (5x6) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 30 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1885 pF @ 15 V |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
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FDMS7682-NC | onsemi |
Description: PT7 30V/20V NCH ER TREN MPackaging: Cut Tape (CT) Package / Case: 8-PowerTDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 16A (Ta), 22A (Tc) Rds On (Max) @ Id, Vgs: 6.3mOhm @ 14A, 10V Power Dissipation (Max): 2.5W (Ta), 33W (Tc) Vgs(th) (Max) @ Id: 3V @ 250µA Supplier Device Package: 8-PQFN (5x6) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 30 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1885 pF @ 15 V |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
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NLV14052BDR2G | onsemi |
Description: IC SWITCH DP4T 280OHM 16SOICPackaging: Bulk Package / Case: 16-SOIC (0.154", 3.90mm Width) Mounting Type: Surface Mount Operating Temperature: -55°C ~ 125°C (TA) On-State Resistance (Max): 280Ohm -3db Bandwidth: 17MHz Supplier Device Package: 16-SOIC Voltage - Supply, Single (V+): 3V ~ 18V Switch Circuit: DP4T Multiplexer/Demultiplexer Circuit: 2:4 Channel-to-Channel Matching (ΔRon): 10Ohm Channel Capacitance (CS(off), CD(off)): 7.5pF Current - Leakage (IS(off)) (Max): 100nA Grade: Automotive Number of Circuits: 2 Qualification: AEC-Q100 |
auf Bestellung 241398 Stücke: Lieferzeit 10-14 Tag (e) |
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NTMYS3D8N04CLTWG | onsemi |
Description: MOSFET N-CH 40V 22A/87A 4LFPAKPackaging: Tape & Reel (TR) Package / Case: SOT-1023, 4-LFPAK Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 22A (Ta), 87A (Tc) Rds On (Max) @ Id, Vgs: 3.7mOhm @ 20A, 10V Power Dissipation (Max): 3.6W (Ta), 55W (Tc) Vgs(th) (Max) @ Id: 2V @ 50µA Supplier Device Package: LFPAK4 (5x6) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): 20V Drain to Source Voltage (Vdss): 40 V Gate Charge (Qg) (Max) @ Vgs: 18 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1600 pF @ 25 V |
auf Bestellung 3000 Stücke: Lieferzeit 10-14 Tag (e) |
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NTMYS3D8N04CLTWG | onsemi |
Description: MOSFET N-CH 40V 22A/87A 4LFPAKPackaging: Cut Tape (CT) Package / Case: SOT-1023, 4-LFPAK Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 22A (Ta), 87A (Tc) Rds On (Max) @ Id, Vgs: 3.7mOhm @ 20A, 10V Power Dissipation (Max): 3.6W (Ta), 55W (Tc) Vgs(th) (Max) @ Id: 2V @ 50µA Supplier Device Package: LFPAK4 (5x6) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): 20V Drain to Source Voltage (Vdss): 40 V Gate Charge (Qg) (Max) @ Vgs: 18 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1600 pF @ 25 V |
auf Bestellung 5980 Stücke: Lieferzeit 10-14 Tag (e) |
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NVMFS5C456NLWFET1G | onsemi |
Description: MOSFET N-CH 40V 5DFNPackaging: Tape & Reel (TR) Package / Case: 8-PowerTDFN, 5 Leads Mounting Type: Surface Mount, Wettable Flank Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 22A (Ta), 87A (Tc) Rds On (Max) @ Id, Vgs: 3.7mOhm @ 20A, 10V Power Dissipation (Max): 3.6W (Ta), 55W (Tc) Vgs(th) (Max) @ Id: 2V @ 50µA Supplier Device Package: 5-DFNW (4.9x5.9) (8-SOFL-WF) Grade: Automotive Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 40 V Gate Charge (Qg) (Max) @ Vgs: 18 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1600 pF @ 25 V Qualification: AEC-Q101 |
auf Bestellung 22500 Stücke: Lieferzeit 10-14 Tag (e) |
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NVMFS5C456NLWFET1G | onsemi |
Description: MOSFET N-CH 40V 5DFNPackaging: Cut Tape (CT) Package / Case: 8-PowerTDFN, 5 Leads Mounting Type: Surface Mount, Wettable Flank Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 22A (Ta), 87A (Tc) Rds On (Max) @ Id, Vgs: 3.7mOhm @ 20A, 10V Power Dissipation (Max): 3.6W (Ta), 55W (Tc) Vgs(th) (Max) @ Id: 2V @ 50µA Supplier Device Package: 5-DFNW (4.9x5.9) (8-SOFL-WF) Grade: Automotive Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 40 V Gate Charge (Qg) (Max) @ Vgs: 18 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1600 pF @ 25 V Qualification: AEC-Q101 |
auf Bestellung 22500 Stücke: Lieferzeit 10-14 Tag (e) |
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NVMFS5C456NLWFHT1G | onsemi |
Description: T6 40V NCH LL IN U8FLPackaging: Tape & Reel (TR) Package / Case: 8-PowerTDFN, 5 Leads Mounting Type: Surface Mount, Wettable Flank Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 22A (Ta), 87A (Tc) Rds On (Max) @ Id, Vgs: 3.7mOhm @ 20A, 10V Power Dissipation (Max): 3.6W (Ta), 55W (Tc) Vgs(th) (Max) @ Id: 2V @ 50µA Supplier Device Package: 5-DFNW (4.9x5.9) (8-SOFL-WF) Grade: Automotive Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 40 V Gate Charge (Qg) (Max) @ Vgs: 18 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1600 pF @ 25 V Qualification: AEC-Q101 |
auf Bestellung 25500 Stücke: Lieferzeit 10-14 Tag (e) |
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NVMFS5C456NLWFHT1G | onsemi |
Description: T6 40V NCH LL IN U8FLPackaging: Cut Tape (CT) Package / Case: 8-PowerTDFN, 5 Leads Mounting Type: Surface Mount, Wettable Flank Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 22A (Ta), 87A (Tc) Rds On (Max) @ Id, Vgs: 3.7mOhm @ 20A, 10V Power Dissipation (Max): 3.6W (Ta), 55W (Tc) Vgs(th) (Max) @ Id: 2V @ 50µA Supplier Device Package: 5-DFNW (4.9x5.9) (8-SOFL-WF) Grade: Automotive Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 40 V Gate Charge (Qg) (Max) @ Vgs: 18 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1600 pF @ 25 V Qualification: AEC-Q101 |
auf Bestellung 25500 Stücke: Lieferzeit 10-14 Tag (e) |
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NVMFS5C456NLET1G-YE | onsemi |
Description: T6 40V NCH LL IN S08FLPackaging: Tape & Reel (TR) Package / Case: 8-PowerTDFN, 5 Leads Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 22A (Ta), 87A (Tc) Rds On (Max) @ Id, Vgs: 3.7mOhm @ 20A, 10V Power Dissipation (Max): 3.6W (Ta), 55W (Tc) Vgs(th) (Max) @ Id: 2V @ 50µA Supplier Device Package: 5-DFN (5x6) (8-SOFL) Grade: Automotive Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 40 V Gate Charge (Qg) (Max) @ Vgs: 18 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1600 pF @ 25 V Qualification: AEC-Q101 |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
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NVMFS5C456NLET1G-YE | onsemi |
Description: T6 40V NCH LL IN S08FLPackaging: Cut Tape (CT) Package / Case: 8-PowerTDFN, 5 Leads Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 22A (Ta), 87A (Tc) Rds On (Max) @ Id, Vgs: 3.7mOhm @ 20A, 10V Power Dissipation (Max): 3.6W (Ta), 55W (Tc) Vgs(th) (Max) @ Id: 2V @ 50µA Supplier Device Package: 5-DFN (5x6) (8-SOFL) Grade: Automotive Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 40 V Gate Charge (Qg) (Max) @ Vgs: 18 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1600 pF @ 25 V Qualification: AEC-Q101 |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
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MC74LCX573DWG | onsemi |
Description: IC D-TYPE TRANSP 8:8 20-SOICPackaging: Bulk Package / Case: 20-SOIC (0.295", 7.50mm Width) Output Type: Tri-State Mounting Type: Surface Mount Circuit: 8:8 Logic Type: D-Type Transparent Latch Operating Temperature: -55°C ~ 125°C Voltage - Supply: 2V ~ 3.6V Independent Circuits: 1 Current - Output High, Low: 24mA, 24mA Delay Time - Propagation: 1.5ns Supplier Device Package: 20-SOIC |
auf Bestellung 40329 Stücke: Lieferzeit 10-14 Tag (e) |
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MC74VHCT373ADTRG | onsemi |
Description: IC D-TYPE TRANSP 8:8 20-TSSOPPackaging: Bulk Package / Case: 20-TSSOP (0.173", 4.40mm Width) Output Type: Tri-State Mounting Type: Surface Mount Circuit: 8:8 Logic Type: D-Type Transparent Latch Operating Temperature: -40°C ~ 85°C Voltage - Supply: 4.5V ~ 5.5V Independent Circuits: 1 Current - Output High, Low: 8mA, 8mA Delay Time - Propagation: 5.1ns Supplier Device Package: 20-TSSOP |
auf Bestellung 22676 Stücke: Lieferzeit 10-14 Tag (e) |
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74LVTH373MTC | onsemi |
Description: IC D-TYPE TRANSP 8:8 20-TSSOPPackaging: Bulk Package / Case: 20-TSSOP (0.173", 4.40mm Width) Output Type: Tri-State Mounting Type: Surface Mount Circuit: 8:8 Logic Type: D-Type Transparent Latch Operating Temperature: -40°C ~ 85°C Voltage - Supply: 2.7V ~ 3.6V Independent Circuits: 1 Current - Output High, Low: 32mA, 64mA Delay Time - Propagation: 1.5ns Supplier Device Package: 20-TSSOP |
auf Bestellung 7050 Stücke: Lieferzeit 10-14 Tag (e) |
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74LVX373M | onsemi |
Description: IC D-TYPE TRANSP 8:8 20-SOICPackaging: Bulk Package / Case: 20-SOIC (0.295", 7.50mm Width) Output Type: Tri-State Mounting Type: Surface Mount Circuit: 8:8 Logic Type: D-Type Transparent Latch Operating Temperature: -40°C ~ 85°C Voltage - Supply: 2V ~ 3.6V Independent Circuits: 1 Current - Output High, Low: 4mA, 4mA Delay Time - Propagation: 6ns Supplier Device Package: 20-SOIC |
auf Bestellung 27755 Stücke: Lieferzeit 10-14 Tag (e) |
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74LVX373M | onsemi |
Description: IC D-TYPE TRANSP 8:8 20-SOICPackaging: Tube Package / Case: 20-SOIC (0.295", 7.50mm Width) Output Type: Tri-State Mounting Type: Surface Mount Circuit: 8:8 Logic Type: D-Type Transparent Latch Operating Temperature: -40°C ~ 85°C Voltage - Supply: 2V ~ 3.6V Independent Circuits: 1 Current - Output High, Low: 4mA, 4mA Delay Time - Propagation: 6ns Supplier Device Package: 20-SOIC |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH |
| 74LVTH573WMX |
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Hersteller: onsemi
Description: IC D-TYPE TRANSP 8:8 20-SOIC
Packaging: Tape & Reel (TR)
Package / Case: 20-SOIC (0.295", 7.50mm Width)
Output Type: Tri-State
Mounting Type: Surface Mount
Circuit: 8:8
Logic Type: D-Type Transparent Latch
Operating Temperature: -40°C ~ 85°C
Voltage - Supply: 2.7V ~ 3.6V
Independent Circuits: 1
Current - Output High, Low: 32mA, 64mA
Delay Time - Propagation: 4.4ns
Supplier Device Package: 20-SOIC
Description: IC D-TYPE TRANSP 8:8 20-SOIC
Packaging: Tape & Reel (TR)
Package / Case: 20-SOIC (0.295", 7.50mm Width)
Output Type: Tri-State
Mounting Type: Surface Mount
Circuit: 8:8
Logic Type: D-Type Transparent Latch
Operating Temperature: -40°C ~ 85°C
Voltage - Supply: 2.7V ~ 3.6V
Independent Circuits: 1
Current - Output High, Low: 32mA, 64mA
Delay Time - Propagation: 4.4ns
Supplier Device Package: 20-SOIC
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| NTMFS4835NT1G |
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Hersteller: onsemi
Description: MOSFET N-CH 30V 13A/130A 5DFN
Packaging: Bulk
Package / Case: 8-PowerTDFN, 5 Leads
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 13A (Ta), 130A (Tc)
Rds On (Max) @ Id, Vgs: 3.5mOhm @ 30A, 10V
Power Dissipation (Max): 890mW (Ta), 62.5W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: 5-DFN (5x6) (8-SOFL)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 11.5V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 52 nC @ 11.5 V
Input Capacitance (Ciss) (Max) @ Vds: 3100 pF @ 12 V
Description: MOSFET N-CH 30V 13A/130A 5DFN
Packaging: Bulk
Package / Case: 8-PowerTDFN, 5 Leads
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 13A (Ta), 130A (Tc)
Rds On (Max) @ Id, Vgs: 3.5mOhm @ 30A, 10V
Power Dissipation (Max): 890mW (Ta), 62.5W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: 5-DFN (5x6) (8-SOFL)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 11.5V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 52 nC @ 11.5 V
Input Capacitance (Ciss) (Max) @ Vds: 3100 pF @ 12 V
auf Bestellung 794741 Stücke:
Lieferzeit 10-14 Tag (e)| Anzahl | Preis |
|---|---|
| 348+ | 1.31 EUR |
| FDZ293P |
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Hersteller: onsemi
Description: MOSFET P-CH 20V 4.6A 9BGA
Packaging: Tape & Reel (TR)
Package / Case: 9-VFBGA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 4.6A (Ta)
Rds On (Max) @ Id, Vgs: 46mOhm @ 4.6A, 4.5V
Power Dissipation (Max): 1.7W (Ta)
Vgs(th) (Max) @ Id: 1.5V @ 250µA
Supplier Device Package: 9-BGA (1.5x1.6)
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
Vgs (Max): ±12V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 11 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 754 pF @ 10 V
Description: MOSFET P-CH 20V 4.6A 9BGA
Packaging: Tape & Reel (TR)
Package / Case: 9-VFBGA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 4.6A (Ta)
Rds On (Max) @ Id, Vgs: 46mOhm @ 4.6A, 4.5V
Power Dissipation (Max): 1.7W (Ta)
Vgs(th) (Max) @ Id: 1.5V @ 250µA
Supplier Device Package: 9-BGA (1.5x1.6)
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
Vgs (Max): ±12V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 11 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 754 pF @ 10 V
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| SMMUN2114LT1G |
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Hersteller: onsemi
Description: TRANS PREBIAS PNP 50V SOT23-3
Packaging: Bulk
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: PNP - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 250mV @ 300µA, 10mA
Current - Collector Cutoff (Max): 500nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 5mA, 10V
Supplier Device Package: SOT-23-3 (TO-236)
Grade: Automotive
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 246 mW
Resistor - Base (R1): 10 kOhms
Resistor - Emitter Base (R2): 47 kOhms
Qualification: AEC-Q101
Resistors Included: R1 and R2
Description: TRANS PREBIAS PNP 50V SOT23-3
Packaging: Bulk
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: PNP - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 250mV @ 300µA, 10mA
Current - Collector Cutoff (Max): 500nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 5mA, 10V
Supplier Device Package: SOT-23-3 (TO-236)
Grade: Automotive
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 246 mW
Resistor - Base (R1): 10 kOhms
Resistor - Emitter Base (R2): 47 kOhms
Qualification: AEC-Q101
Resistors Included: R1 and R2
auf Bestellung 76202 Stücke:
Lieferzeit 10-14 Tag (e)| Anzahl | Preis |
|---|---|
| 10762+ | 0.046 EUR |
| NLV74HCT32ADTR2G |
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Hersteller: onsemi
Description: IC GATE OR 4CH 2-INP 14TSSOP
Packaging: Bulk
Package / Case: 14-TSSOP (0.173", 4.40mm Width)
Mounting Type: Surface Mount
Logic Type: OR Gate
Operating Temperature: -55°C ~ 125°C
Voltage - Supply: 2V ~ 6V
Current - Output High, Low: 4mA, 4mA
Number of Inputs: 2
Supplier Device Package: 14-TSSOP
Input Logic Level - High: 3.98V ~ 5.4V
Input Logic Level - Low: 0.1V ~ 0.26V
Max Propagation Delay @ V, Max CL: 15ns @ 5V, 50pF
Grade: Automotive
Number of Circuits: 4
Current - Quiescent (Max): 1 µA
Qualification: AEC-Q100
Description: IC GATE OR 4CH 2-INP 14TSSOP
Packaging: Bulk
Package / Case: 14-TSSOP (0.173", 4.40mm Width)
Mounting Type: Surface Mount
Logic Type: OR Gate
Operating Temperature: -55°C ~ 125°C
Voltage - Supply: 2V ~ 6V
Current - Output High, Low: 4mA, 4mA
Number of Inputs: 2
Supplier Device Package: 14-TSSOP
Input Logic Level - High: 3.98V ~ 5.4V
Input Logic Level - Low: 0.1V ~ 0.26V
Max Propagation Delay @ V, Max CL: 15ns @ 5V, 50pF
Grade: Automotive
Number of Circuits: 4
Current - Quiescent (Max): 1 µA
Qualification: AEC-Q100
auf Bestellung 36792 Stücke:
Lieferzeit 10-14 Tag (e)| Anzahl | Preis |
|---|---|
| 1183+ | 0.38 EUR |
| MC74HCT32ADG |
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Hersteller: onsemi
Description: IC GATE OR 4CH 2-INP 14SOIC
Packaging: Bulk
Package / Case: 14-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Logic Type: OR Gate
Operating Temperature: -55°C ~ 125°C
Voltage - Supply: 4.5V ~ 5.5V
Current - Output High, Low: 4mA, 4mA
Number of Inputs: 2
Supplier Device Package: 14-SOIC
Input Logic Level - High: 2V
Input Logic Level - Low: 0.8V
Max Propagation Delay @ V, Max CL: 15ns @ 5V, 50pF
Number of Circuits: 4
Current - Quiescent (Max): 1 µA
Description: IC GATE OR 4CH 2-INP 14SOIC
Packaging: Bulk
Package / Case: 14-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Logic Type: OR Gate
Operating Temperature: -55°C ~ 125°C
Voltage - Supply: 4.5V ~ 5.5V
Current - Output High, Low: 4mA, 4mA
Number of Inputs: 2
Supplier Device Package: 14-SOIC
Input Logic Level - High: 2V
Input Logic Level - Low: 0.8V
Max Propagation Delay @ V, Max CL: 15ns @ 5V, 50pF
Number of Circuits: 4
Current - Quiescent (Max): 1 µA
auf Bestellung 25280 Stücke:
Lieferzeit 10-14 Tag (e)| Anzahl | Preis |
|---|---|
| 958+ | 0.47 EUR |
| TIP141 |
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Hersteller: onsemi
Description: TRANS NPN 80V 10A TO-218
Packaging: Tube
Package / Case: TO-218-3
Mounting Type: Through Hole
Transistor Type: NPN
Operating Temperature: -65°C ~ 150°C (TJ)
DC Current Gain (hFE) (Min) @ Ic, Vce: 1000 @ 5A, 4V
Supplier Device Package: TO-218
Current - Collector (Ic) (Max): 10 A
Voltage - Collector Emitter Breakdown (Max): 80 V
Power - Max: 125 W
Description: TRANS NPN 80V 10A TO-218
Packaging: Tube
Package / Case: TO-218-3
Mounting Type: Through Hole
Transistor Type: NPN
Operating Temperature: -65°C ~ 150°C (TJ)
DC Current Gain (hFE) (Min) @ Ic, Vce: 1000 @ 5A, 4V
Supplier Device Package: TO-218
Current - Collector (Ic) (Max): 10 A
Voltage - Collector Emitter Breakdown (Max): 80 V
Power - Max: 125 W
auf Bestellung 559 Stücke:
Lieferzeit 10-14 Tag (e)| Anzahl | Preis |
|---|---|
| 202+ | 2.26 EUR |
| TIP141 |
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Hersteller: onsemi
Description: TRANS NPN DARL 80V 10A SOT-93
Packaging: Bulk
Package / Case: TO-218-3
Mounting Type: Through Hole
Transistor Type: NPN - Darlington
Operating Temperature: -65°C ~ 150°C
Vce Saturation (Max) @ Ib, Ic: 3V @ 40mA, 10A
Current - Collector Cutoff (Max): 2mA
DC Current Gain (hFE) (Min) @ Ic, Vce: 1000 @ 5A, 4V
Frequency - Transition: 4MHz
Supplier Device Package: SOT-93
Current - Collector (Ic) (Max): 10 A
Voltage - Collector Emitter Breakdown (Max): 80 V
Power - Max: 125 W
Description: TRANS NPN DARL 80V 10A SOT-93
Packaging: Bulk
Package / Case: TO-218-3
Mounting Type: Through Hole
Transistor Type: NPN - Darlington
Operating Temperature: -65°C ~ 150°C
Vce Saturation (Max) @ Ib, Ic: 3V @ 40mA, 10A
Current - Collector Cutoff (Max): 2mA
DC Current Gain (hFE) (Min) @ Ic, Vce: 1000 @ 5A, 4V
Frequency - Transition: 4MHz
Supplier Device Package: SOT-93
Current - Collector (Ic) (Max): 10 A
Voltage - Collector Emitter Breakdown (Max): 80 V
Power - Max: 125 W
Produkt ist nicht verfügbar
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| MURF1660CT |
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Hersteller: onsemi
Description: DIODE ARRAY GP 600V 8A TO-220FP
Packaging: Tube
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 60 ns
Technology: Standard
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 8A
Supplier Device Package: TO-220FP
Operating Temperature - Junction: -65°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 8 A
Current - Reverse Leakage @ Vr: 10 µA @ 600 V
Description: DIODE ARRAY GP 600V 8A TO-220FP
Packaging: Tube
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 60 ns
Technology: Standard
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 8A
Supplier Device Package: TO-220FP
Operating Temperature - Junction: -65°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 8 A
Current - Reverse Leakage @ Vr: 10 µA @ 600 V
Produkt ist nicht verfügbar
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| KSC5039FTU |
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Hersteller: onsemi
Description: TRANS NPN 400V 5A TO-220F-3
Packaging: Tube
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Transistor Type: NPN
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 1.5V @ 500mA, 2.5A
Current - Collector Cutoff (Max): 10µA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 10 @ 300mA, 5V
Frequency - Transition: 10MHz
Supplier Device Package: TO-220F-3
Current - Collector (Ic) (Max): 5 A
Voltage - Collector Emitter Breakdown (Max): 400 V
Power - Max: 30 W
Description: TRANS NPN 400V 5A TO-220F-3
Packaging: Tube
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Transistor Type: NPN
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 1.5V @ 500mA, 2.5A
Current - Collector Cutoff (Max): 10µA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 10 @ 300mA, 5V
Frequency - Transition: 10MHz
Supplier Device Package: TO-220F-3
Current - Collector (Ic) (Max): 5 A
Voltage - Collector Emitter Breakdown (Max): 400 V
Power - Max: 30 W
Produkt ist nicht verfügbar
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| 1N4733A-T50R |
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Hersteller: onsemi
Description: DIODE ZENER 5.1V 1W DO41
Tolerance: ±5%
Packaging: Bulk
Package / Case: DO-204AL, DO-41, Axial
Mounting Type: Through Hole
Operating Temperature: -65°C ~ 200°C
Voltage - Zener (Nom) (Vz): 5.1 V
Impedance (Max) (Zzt): 7 Ohms
Supplier Device Package: DO-41
Power - Max: 1 W
Current - Reverse Leakage @ Vr: 10 µA @ 1 V
Description: DIODE ZENER 5.1V 1W DO41
Tolerance: ±5%
Packaging: Bulk
Package / Case: DO-204AL, DO-41, Axial
Mounting Type: Through Hole
Operating Temperature: -65°C ~ 200°C
Voltage - Zener (Nom) (Vz): 5.1 V
Impedance (Max) (Zzt): 7 Ohms
Supplier Device Package: DO-41
Power - Max: 1 W
Current - Reverse Leakage @ Vr: 10 µA @ 1 V
auf Bestellung 12000 Stücke:
Lieferzeit 10-14 Tag (e)| Anzahl | Preis |
|---|---|
| 6667+ | 0.076 EUR |
| 1N4733A-T50R |
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Hersteller: onsemi
Description: DIODE ZENER 5.1V 1W DO41
Tolerance: ±5%
Packaging: Tape & Reel (TR)
Package / Case: DO-204AL, DO-41, Axial
Mounting Type: Through Hole
Operating Temperature: -65°C ~ 200°C
Voltage - Zener (Nom) (Vz): 5.1 V
Impedance (Max) (Zzt): 7 Ohms
Supplier Device Package: DO-41
Power - Max: 1 W
Current - Reverse Leakage @ Vr: 10 µA @ 1 V
Description: DIODE ZENER 5.1V 1W DO41
Tolerance: ±5%
Packaging: Tape & Reel (TR)
Package / Case: DO-204AL, DO-41, Axial
Mounting Type: Through Hole
Operating Temperature: -65°C ~ 200°C
Voltage - Zener (Nom) (Vz): 5.1 V
Impedance (Max) (Zzt): 7 Ohms
Supplier Device Package: DO-41
Power - Max: 1 W
Current - Reverse Leakage @ Vr: 10 µA @ 1 V
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| NCV2931AST-5T3G |
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Hersteller: onsemi
Description: IC REG LINEAR 5V 100MA SOT-223
Packaging: Tape & Reel (TR)
Package / Case: TO-261-4, TO-261AA
Output Type: Fixed
Mounting Type: Surface Mount
Current - Output: 100mA
Operating Temperature: -40°C ~ 125°C
Output Configuration: Positive
Current - Quiescent (Iq): 1 mA
Voltage - Input (Max): 26V
Number of Regulators: 1
Supplier Device Package: SOT-223
Voltage - Output (Min/Fixed): 5V
Grade: Automotive
PSRR: 90dB (120Hz)
Voltage Dropout (Max): 0.6V @ 100mA
Protection Features: Over Current, Over Temperature
Current - Supply (Max): 30 mA
Qualification: AEC-Q100
Description: IC REG LINEAR 5V 100MA SOT-223
Packaging: Tape & Reel (TR)
Package / Case: TO-261-4, TO-261AA
Output Type: Fixed
Mounting Type: Surface Mount
Current - Output: 100mA
Operating Temperature: -40°C ~ 125°C
Output Configuration: Positive
Current - Quiescent (Iq): 1 mA
Voltage - Input (Max): 26V
Number of Regulators: 1
Supplier Device Package: SOT-223
Voltage - Output (Min/Fixed): 5V
Grade: Automotive
PSRR: 90dB (120Hz)
Voltage Dropout (Max): 0.6V @ 100mA
Protection Features: Over Current, Over Temperature
Current - Supply (Max): 30 mA
Qualification: AEC-Q100
auf Bestellung 44000 Stücke:
Lieferzeit 10-14 Tag (e)| Anzahl | Preis |
|---|---|
| 4000+ | 0.59 EUR |
| 8000+ | 0.58 EUR |
| 12000+ | 0.57 EUR |
| 20000+ | 0.56 EUR |
| NCV2931AST-5T3G |
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Hersteller: onsemi
Description: IC REG LINEAR 5V 100MA SOT-223
Packaging: Cut Tape (CT)
Package / Case: TO-261-4, TO-261AA
Output Type: Fixed
Mounting Type: Surface Mount
Current - Output: 100mA
Operating Temperature: -40°C ~ 125°C
Output Configuration: Positive
Current - Quiescent (Iq): 1 mA
Voltage - Input (Max): 26V
Number of Regulators: 1
Supplier Device Package: SOT-223
Voltage - Output (Min/Fixed): 5V
Grade: Automotive
PSRR: 90dB (120Hz)
Voltage Dropout (Max): 0.6V @ 100mA
Protection Features: Over Current, Over Temperature
Current - Supply (Max): 30 mA
Qualification: AEC-Q100
Description: IC REG LINEAR 5V 100MA SOT-223
Packaging: Cut Tape (CT)
Package / Case: TO-261-4, TO-261AA
Output Type: Fixed
Mounting Type: Surface Mount
Current - Output: 100mA
Operating Temperature: -40°C ~ 125°C
Output Configuration: Positive
Current - Quiescent (Iq): 1 mA
Voltage - Input (Max): 26V
Number of Regulators: 1
Supplier Device Package: SOT-223
Voltage - Output (Min/Fixed): 5V
Grade: Automotive
PSRR: 90dB (120Hz)
Voltage Dropout (Max): 0.6V @ 100mA
Protection Features: Over Current, Over Temperature
Current - Supply (Max): 30 mA
Qualification: AEC-Q100
auf Bestellung 44738 Stücke:
Lieferzeit 10-14 Tag (e)| Anzahl | Preis |
|---|---|
| 14+ | 1.28 EUR |
| 20+ | 0.92 EUR |
| 25+ | 0.83 EUR |
| 100+ | 0.73 EUR |
| 250+ | 0.68 EUR |
| 500+ | 0.65 EUR |
| 1000+ | 0.63 EUR |
| SBRA401NT3G |
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Hersteller: onsemi
Description: DIODE SCHOTTKY 40V 1A SMA
Packaging: Bulk
Package / Case: DO-214AC, SMA
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 1A
Supplier Device Package: SMA
Operating Temperature - Junction: -55°C ~ 125°C
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 40 V
Voltage - Forward (Vf) (Max) @ If: 550 mV @ 1 A
Current - Reverse Leakage @ Vr: 500 µA @ 40 V
Qualification: AEC-Q101
Description: DIODE SCHOTTKY 40V 1A SMA
Packaging: Bulk
Package / Case: DO-214AC, SMA
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 1A
Supplier Device Package: SMA
Operating Temperature - Junction: -55°C ~ 125°C
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 40 V
Voltage - Forward (Vf) (Max) @ If: 550 mV @ 1 A
Current - Reverse Leakage @ Vr: 500 µA @ 40 V
Qualification: AEC-Q101
Produkt ist nicht verfügbar
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| DM74ALS573BWMX |
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Hersteller: onsemi
Description: IC D-TYPE TRANSP 8:8 20-SOIC
Packaging: Tape & Reel (TR)
Package / Case: 20-SOIC (0.295", 7.50mm Width)
Output Type: Tri-State
Mounting Type: Surface Mount
Circuit: 8:8
Logic Type: D-Type Transparent Latch
Operating Temperature: 0°C ~ 70°C
Voltage - Supply: 4.5V ~ 5.5V
Independent Circuits: 1
Current - Output High, Low: 2.6mA, 24mA
Delay Time - Propagation: 2ns
Supplier Device Package: 20-SOIC
Description: IC D-TYPE TRANSP 8:8 20-SOIC
Packaging: Tape & Reel (TR)
Package / Case: 20-SOIC (0.295", 7.50mm Width)
Output Type: Tri-State
Mounting Type: Surface Mount
Circuit: 8:8
Logic Type: D-Type Transparent Latch
Operating Temperature: 0°C ~ 70°C
Voltage - Supply: 4.5V ~ 5.5V
Independent Circuits: 1
Current - Output High, Low: 2.6mA, 24mA
Delay Time - Propagation: 2ns
Supplier Device Package: 20-SOIC
Produkt ist nicht verfügbar
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Stück im Wert von UAH
| DM74ALS573BWM |
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Hersteller: onsemi
Description: IC D-TYPE TRANSP 8:8 20-SOIC
Packaging: Tube
Package / Case: 20-SOIC (0.295", 7.50mm Width)
Output Type: Tri-State
Mounting Type: Surface Mount
Circuit: 8:8
Logic Type: D-Type Transparent Latch
Operating Temperature: 0°C ~ 70°C
Voltage - Supply: 4.5V ~ 5.5V
Independent Circuits: 1
Current - Output High, Low: 2.6mA, 24mA
Delay Time - Propagation: 2ns
Supplier Device Package: 20-SOIC
Description: IC D-TYPE TRANSP 8:8 20-SOIC
Packaging: Tube
Package / Case: 20-SOIC (0.295", 7.50mm Width)
Output Type: Tri-State
Mounting Type: Surface Mount
Circuit: 8:8
Logic Type: D-Type Transparent Latch
Operating Temperature: 0°C ~ 70°C
Voltage - Supply: 4.5V ~ 5.5V
Independent Circuits: 1
Current - Output High, Low: 2.6mA, 24mA
Delay Time - Propagation: 2ns
Supplier Device Package: 20-SOIC
Produkt ist nicht verfügbar
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| NB3L202KMNGEVB |
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Hersteller: onsemi
Description: EVAL BOARD FOR NB3L202K
Packaging: Box
Function: Clock Buffer
Type: Timing
Contents: Board(s)
Utilized IC / Part: NB3L202K
Description: EVAL BOARD FOR NB3L202K
Packaging: Box
Function: Clock Buffer
Type: Timing
Contents: Board(s)
Utilized IC / Part: NB3L202K
auf Bestellung 1 Stücke:
Lieferzeit 10-14 Tag (e)| Anzahl | Preis |
|---|---|
| 1+ | 475.04 EUR |
| NOIV1SE025KA-GTI |
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Hersteller: onsemi
Description: IC IMAGE SENSOR 25MP 355UPGA
Packaging: Tray
Package / Case: 355-BSPGA, Window
Type: CMOS
Operating Temperature: -40°C ~ 85°C (TJ)
Voltage - Supply: 1.6V ~ 2V, 3V ~ 3.6V
Pixel Size: 4.5µm x 4.5µm
Active Pixel Array: 5120H x 5120V
Supplier Device Package: 355-µPGA
Frames per Second: 53.0
Description: IC IMAGE SENSOR 25MP 355UPGA
Packaging: Tray
Package / Case: 355-BSPGA, Window
Type: CMOS
Operating Temperature: -40°C ~ 85°C (TJ)
Voltage - Supply: 1.6V ~ 2V, 3V ~ 3.6V
Pixel Size: 4.5µm x 4.5µm
Active Pixel Array: 5120H x 5120V
Supplier Device Package: 355-µPGA
Frames per Second: 53.0
auf Bestellung 12 Stücke:
Lieferzeit 10-14 Tag (e)| Anzahl | Preis |
|---|---|
| 1+ | 4023.84 EUR |
| BF244C |
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Hersteller: onsemi
Description: RF MOSFET JFET 15V TO92-3
Packaging: Bulk
Package / Case: TO-226-3, TO-92-3 (TO-226AA)
Current Rating (Amps): 50mA
Mounting Type: Through Hole
Frequency: 100MHz
Configuration: N-Channel
Technology: JFET
Noise Figure: 1.5dB
Supplier Device Package: TO-92-3
Voltage - Rated: 30 V
Voltage - Test: 15 V
Description: RF MOSFET JFET 15V TO92-3
Packaging: Bulk
Package / Case: TO-226-3, TO-92-3 (TO-226AA)
Current Rating (Amps): 50mA
Mounting Type: Through Hole
Frequency: 100MHz
Configuration: N-Channel
Technology: JFET
Noise Figure: 1.5dB
Supplier Device Package: TO-92-3
Voltage - Rated: 30 V
Voltage - Test: 15 V
Produkt ist nicht verfügbar
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Stück im Wert von UAH
| TL074ACN |
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Hersteller: onsemi
Description: IC OPAMP JFET 4 CIRCUIT 14DIP
Packaging: Tube
Package / Case: 14-DIP (0.300", 7.62mm)
Mounting Type: Through Hole
Amplifier Type: J-FET
Operating Temperature: 0°C ~ 70°C (TA)
Current - Supply: 1.4mA (x4 Channels)
Slew Rate: 13V/µs
Gain Bandwidth Product: 5.25 MHz
Current - Input Bias: 65 pA
Voltage - Input Offset: 3 mV
Supplier Device Package: 14-PDIP
Number of Circuits: 4
Current - Output / Channel: 40 mA
Voltage - Supply Span (Min): 10 V
Voltage - Supply Span (Max): 30 V
Description: IC OPAMP JFET 4 CIRCUIT 14DIP
Packaging: Tube
Package / Case: 14-DIP (0.300", 7.62mm)
Mounting Type: Through Hole
Amplifier Type: J-FET
Operating Temperature: 0°C ~ 70°C (TA)
Current - Supply: 1.4mA (x4 Channels)
Slew Rate: 13V/µs
Gain Bandwidth Product: 5.25 MHz
Current - Input Bias: 65 pA
Voltage - Input Offset: 3 mV
Supplier Device Package: 14-PDIP
Number of Circuits: 4
Current - Output / Channel: 40 mA
Voltage - Supply Span (Min): 10 V
Voltage - Supply Span (Max): 30 V
auf Bestellung 63962 Stücke:
Lieferzeit 10-14 Tag (e)| Anzahl | Preis |
|---|---|
| 383+ | 1.16 EUR |
| TIP32C |
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Hersteller: onsemi
Description: TRANS PNP 100V 3A TO-220
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Transistor Type: PNP
Operating Temperature: -65°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 1.2V @ 375mA, 3A
Current - Collector Cutoff (Max): 300µA
DC Current Gain (hFE) (Min) @ Ic, Vce: 10 @ 3A, 4V
Frequency - Transition: 3MHz
Supplier Device Package: TO-220
Current - Collector (Ic) (Max): 3 A
Voltage - Collector Emitter Breakdown (Max): 100 V
Power - Max: 2 W
Description: TRANS PNP 100V 3A TO-220
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Transistor Type: PNP
Operating Temperature: -65°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 1.2V @ 375mA, 3A
Current - Collector Cutoff (Max): 300µA
DC Current Gain (hFE) (Min) @ Ic, Vce: 10 @ 3A, 4V
Frequency - Transition: 3MHz
Supplier Device Package: TO-220
Current - Collector (Ic) (Max): 3 A
Voltage - Collector Emitter Breakdown (Max): 100 V
Power - Max: 2 W
auf Bestellung 107342 Stücke:
Lieferzeit 10-14 Tag (e)| Anzahl | Preis |
|---|---|
| 654+ | 0.69 EUR |
| TIP32C |
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Hersteller: onsemi
Description: TRANS PNP 100V 3A TO-220
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Transistor Type: PNP
Operating Temperature: -65°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 1.2V @ 375mA, 3A
Current - Collector Cutoff (Max): 300µA
DC Current Gain (hFE) (Min) @ Ic, Vce: 10 @ 3A, 4V
Frequency - Transition: 3MHz
Supplier Device Package: TO-220
Current - Collector (Ic) (Max): 3 A
Voltage - Collector Emitter Breakdown (Max): 100 V
Power - Max: 2 W
Description: TRANS PNP 100V 3A TO-220
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Transistor Type: PNP
Operating Temperature: -65°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 1.2V @ 375mA, 3A
Current - Collector Cutoff (Max): 300µA
DC Current Gain (hFE) (Min) @ Ic, Vce: 10 @ 3A, 4V
Frequency - Transition: 3MHz
Supplier Device Package: TO-220
Current - Collector (Ic) (Max): 3 A
Voltage - Collector Emitter Breakdown (Max): 100 V
Power - Max: 2 W
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Stück im Wert von UAH
| TIP115 |
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Hersteller: onsemi
Description: TRANS PNP DARL 60V 2A TO-220-3
Packaging: Bulk
Package / Case: TO-220-3
Mounting Type: Through Hole
Transistor Type: PNP - Darlington
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 2.5V @ 8mA, 2A
Current - Collector Cutoff (Max): 2mA
DC Current Gain (hFE) (Min) @ Ic, Vce: 1000 @ 1A, 4V
Supplier Device Package: TO-220-3
Current - Collector (Ic) (Max): 2 A
Voltage - Collector Emitter Breakdown (Max): 60 V
Power - Max: 2 W
Description: TRANS PNP DARL 60V 2A TO-220-3
Packaging: Bulk
Package / Case: TO-220-3
Mounting Type: Through Hole
Transistor Type: PNP - Darlington
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 2.5V @ 8mA, 2A
Current - Collector Cutoff (Max): 2mA
DC Current Gain (hFE) (Min) @ Ic, Vce: 1000 @ 1A, 4V
Supplier Device Package: TO-220-3
Current - Collector (Ic) (Max): 2 A
Voltage - Collector Emitter Breakdown (Max): 60 V
Power - Max: 2 W
Produkt ist nicht verfügbar
Im Einkaufswagen
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| TIP115 |
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Hersteller: onsemi
Description: TRANS PNP DARL 60V 2A TO-220-3
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Transistor Type: PNP - Darlington
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 2.5V @ 8mA, 2A
Current - Collector Cutoff (Max): 2mA
DC Current Gain (hFE) (Min) @ Ic, Vce: 1000 @ 1A, 4V
Supplier Device Package: TO-220-3
Current - Collector (Ic) (Max): 2 A
Voltage - Collector Emitter Breakdown (Max): 60 V
Power - Max: 2 W
Description: TRANS PNP DARL 60V 2A TO-220-3
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Transistor Type: PNP - Darlington
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 2.5V @ 8mA, 2A
Current - Collector Cutoff (Max): 2mA
DC Current Gain (hFE) (Min) @ Ic, Vce: 1000 @ 1A, 4V
Supplier Device Package: TO-220-3
Current - Collector (Ic) (Max): 2 A
Voltage - Collector Emitter Breakdown (Max): 60 V
Power - Max: 2 W
auf Bestellung 4638 Stücke:
Lieferzeit 10-14 Tag (e)| Anzahl | Preis |
|---|---|
| 633+ | 0.71 EUR |
| TIP137 |
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Hersteller: onsemi
Description: TRANS PNP DARL 100V 8A TO-220AB
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Transistor Type: PNP - Darlington
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 4V @ 30mA, 6A
Current - Collector Cutoff (Max): 500µA
DC Current Gain (hFE) (Min) @ Ic, Vce: 1000 @ 4A, 4V
Supplier Device Package: TO-220AB
Current - Collector (Ic) (Max): 8 A
Voltage - Collector Emitter Breakdown (Max): 100 V
Power - Max: 2 W
Description: TRANS PNP DARL 100V 8A TO-220AB
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Transistor Type: PNP - Darlington
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 4V @ 30mA, 6A
Current - Collector Cutoff (Max): 500µA
DC Current Gain (hFE) (Min) @ Ic, Vce: 1000 @ 4A, 4V
Supplier Device Package: TO-220AB
Current - Collector (Ic) (Max): 8 A
Voltage - Collector Emitter Breakdown (Max): 100 V
Power - Max: 2 W
auf Bestellung 20727 Stücke:
Lieferzeit 10-14 Tag (e)| Anzahl | Preis |
|---|---|
| 319+ | 1.43 EUR |
| TIP42C |
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Hersteller: onsemi
Description: TRANS PNP 100V 6A TO-220-3
Packaging: Bulk
Package / Case: TO-220-3
Mounting Type: Through Hole
Transistor Type: PNP
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 1.5V @ 600mA, 6A
Current - Collector Cutoff (Max): 700µA
DC Current Gain (hFE) (Min) @ Ic, Vce: 15 @ 3A, 4V
Frequency - Transition: 3MHz
Supplier Device Package: TO-220-3
Current - Collector (Ic) (Max): 6 A
Voltage - Collector Emitter Breakdown (Max): 100 V
Power - Max: 2 W
Description: TRANS PNP 100V 6A TO-220-3
Packaging: Bulk
Package / Case: TO-220-3
Mounting Type: Through Hole
Transistor Type: PNP
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 1.5V @ 600mA, 6A
Current - Collector Cutoff (Max): 700µA
DC Current Gain (hFE) (Min) @ Ic, Vce: 15 @ 3A, 4V
Frequency - Transition: 3MHz
Supplier Device Package: TO-220-3
Current - Collector (Ic) (Max): 6 A
Voltage - Collector Emitter Breakdown (Max): 100 V
Power - Max: 2 W
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| TIP42A |
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Hersteller: onsemi
Description: TRANS PNP 80V 6A TO-220
Packaging: Bulk
Package / Case: TO-220-3
Mounting Type: Through Hole
Transistor Type: PNP
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 1.5V @ 600mA, 6A
Current - Collector Cutoff (Max): 700µA
DC Current Gain (hFE) (Min) @ Ic, Vce: 30 @ 300mA, 4V
Frequency - Transition: 3MHz
Supplier Device Package: TO-220
Current - Collector (Ic) (Max): 6 A
Voltage - Collector Emitter Breakdown (Max): 80 V
Power - Max: 2 W
Description: TRANS PNP 80V 6A TO-220
Packaging: Bulk
Package / Case: TO-220-3
Mounting Type: Through Hole
Transistor Type: PNP
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 1.5V @ 600mA, 6A
Current - Collector Cutoff (Max): 700µA
DC Current Gain (hFE) (Min) @ Ic, Vce: 30 @ 300mA, 4V
Frequency - Transition: 3MHz
Supplier Device Package: TO-220
Current - Collector (Ic) (Max): 6 A
Voltage - Collector Emitter Breakdown (Max): 80 V
Power - Max: 2 W
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| NVMFS6H848NLT1G |
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Hersteller: onsemi
Description: MOSFET N-CH 80V 13A/59A 5DFN
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN, 5 Leads
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 13A (Ta), 59A (Tc)
Rds On (Max) @ Id, Vgs: 8.8mOhm @ 10A, 10V
Power Dissipation (Max): 3.7W (Ta), 73W (Tc)
Vgs(th) (Max) @ Id: 2V @ 70µA
Supplier Device Package: 5-DFN (5x6) (8-SOFL)
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 80 V
Gate Charge (Qg) (Max) @ Vgs: 25 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1420 pF @ 40 V
Qualification: AEC-Q101
Description: MOSFET N-CH 80V 13A/59A 5DFN
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN, 5 Leads
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 13A (Ta), 59A (Tc)
Rds On (Max) @ Id, Vgs: 8.8mOhm @ 10A, 10V
Power Dissipation (Max): 3.7W (Ta), 73W (Tc)
Vgs(th) (Max) @ Id: 2V @ 70µA
Supplier Device Package: 5-DFN (5x6) (8-SOFL)
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 80 V
Gate Charge (Qg) (Max) @ Vgs: 25 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1420 pF @ 40 V
Qualification: AEC-Q101
auf Bestellung 474 Stücke:
Lieferzeit 10-14 Tag (e)| Anzahl | Preis |
|---|---|
| 7+ | 2.52 EUR |
| 12+ | 1.6 EUR |
| 100+ | 1.07 EUR |
| BCP53 |
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Hersteller: onsemi
Description: TRANS PNP 80V 1.2A SOT-223-4
Packaging: Tape & Reel (TR)
Package / Case: TO-261-4, TO-261AA
Mounting Type: Surface Mount
Transistor Type: PNP
Operating Temperature: -55°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 500mV @ 50mA, 500mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 150mA, 2V
Supplier Device Package: SOT-223-4
Current - Collector (Ic) (Max): 1.2 A
Voltage - Collector Emitter Breakdown (Max): 80 V
Power - Max: 1.5 W
Description: TRANS PNP 80V 1.2A SOT-223-4
Packaging: Tape & Reel (TR)
Package / Case: TO-261-4, TO-261AA
Mounting Type: Surface Mount
Transistor Type: PNP
Operating Temperature: -55°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 500mV @ 50mA, 500mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 150mA, 2V
Supplier Device Package: SOT-223-4
Current - Collector (Ic) (Max): 1.2 A
Voltage - Collector Emitter Breakdown (Max): 80 V
Power - Max: 1.5 W
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| NCP1028P100G |
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Hersteller: onsemi
Description: IC OFFLINE SWITCH FLYBACK 7DIP
Packaging: Bulk
Package / Case: 8-DIP (0.300", 7.62mm), 7 Leads
Mounting Type: Through Hole
Operating Temperature: 0°C ~ 125°C (TJ)
Duty Cycle: 80%
Frequency - Switching: 100kHz
Internal Switch(s): Yes
Voltage - Breakdown: 700V
Output Isolation: Isolated
Topology: Flyback
Voltage - Supply (Vcc/Vdd): 7.2V ~ 10V
Supplier Device Package: 7-PDIP
Fault Protection: Over Power, Short Circuit
Voltage - Start Up: 8.5 V
Power (Watts): 25 W
Description: IC OFFLINE SWITCH FLYBACK 7DIP
Packaging: Bulk
Package / Case: 8-DIP (0.300", 7.62mm), 7 Leads
Mounting Type: Through Hole
Operating Temperature: 0°C ~ 125°C (TJ)
Duty Cycle: 80%
Frequency - Switching: 100kHz
Internal Switch(s): Yes
Voltage - Breakdown: 700V
Output Isolation: Isolated
Topology: Flyback
Voltage - Supply (Vcc/Vdd): 7.2V ~ 10V
Supplier Device Package: 7-PDIP
Fault Protection: Over Power, Short Circuit
Voltage - Start Up: 8.5 V
Power (Watts): 25 W
auf Bestellung 9255 Stücke:
Lieferzeit 10-14 Tag (e)| Anzahl | Preis |
|---|---|
| 245+ | 1.87 EUR |
| NTMFS4C025NT3G |
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Hersteller: onsemi
Description: MOSFET N-CH 30V 20A/69A 5DFN
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN, 5 Leads
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 20A (Ta), 69A (Tc)
Rds On (Max) @ Id, Vgs: 3.41mOhm @ 30A, 10V
Power Dissipation (Max): 2.55W (Ta), 30.5W (Tc)
Vgs(th) (Max) @ Id: 2.1V @ 250µA
Supplier Device Package: 5-DFN (5x6) (8-SOFL)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 26 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1683 pF @ 15 V
Description: MOSFET N-CH 30V 20A/69A 5DFN
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN, 5 Leads
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 20A (Ta), 69A (Tc)
Rds On (Max) @ Id, Vgs: 3.41mOhm @ 30A, 10V
Power Dissipation (Max): 2.55W (Ta), 30.5W (Tc)
Vgs(th) (Max) @ Id: 2.1V @ 250µA
Supplier Device Package: 5-DFN (5x6) (8-SOFL)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 26 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1683 pF @ 15 V
auf Bestellung 5000 Stücke:
Lieferzeit 10-14 Tag (e)| Anzahl | Preis |
|---|---|
| 5000+ | 0.62 EUR |
| NTMFS4C025NT3G |
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Hersteller: onsemi
Description: MOSFET N-CH 30V 20A/69A 5DFN
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN, 5 Leads
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 20A (Ta), 69A (Tc)
Rds On (Max) @ Id, Vgs: 3.41mOhm @ 30A, 10V
Power Dissipation (Max): 2.55W (Ta), 30.5W (Tc)
Vgs(th) (Max) @ Id: 2.1V @ 250µA
Supplier Device Package: 5-DFN (5x6) (8-SOFL)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 26 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1683 pF @ 15 V
Description: MOSFET N-CH 30V 20A/69A 5DFN
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN, 5 Leads
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 20A (Ta), 69A (Tc)
Rds On (Max) @ Id, Vgs: 3.41mOhm @ 30A, 10V
Power Dissipation (Max): 2.55W (Ta), 30.5W (Tc)
Vgs(th) (Max) @ Id: 2.1V @ 250µA
Supplier Device Package: 5-DFN (5x6) (8-SOFL)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 26 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1683 pF @ 15 V
auf Bestellung 5000 Stücke:
Lieferzeit 10-14 Tag (e)| Anzahl | Preis |
|---|---|
| 7+ | 2.53 EUR |
| 11+ | 1.61 EUR |
| 100+ | 1.07 EUR |
| 500+ | 0.85 EUR |
| 1000+ | 0.77 EUR |
| 2000+ | 0.71 EUR |
| NTMFS4C806NT1G |
Hersteller: onsemi
Description: MOSFET N-CH 30V 5DFN
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN, 5 Leads
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 11A (Ta), 69A (Tc)
Rds On (Max) @ Id, Vgs: 3.41mOhm @ 30A, 10V
Power Dissipation (Max): 770mW (Ta), 30.5W (Tc)
Vgs(th) (Max) @ Id: 2.1V @ 250µA
Supplier Device Package: 5-DFN (5x6) (8-SOFL)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 11.6 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 1683 pF @ 15 V
Description: MOSFET N-CH 30V 5DFN
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN, 5 Leads
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 11A (Ta), 69A (Tc)
Rds On (Max) @ Id, Vgs: 3.41mOhm @ 30A, 10V
Power Dissipation (Max): 770mW (Ta), 30.5W (Tc)
Vgs(th) (Max) @ Id: 2.1V @ 250µA
Supplier Device Package: 5-DFN (5x6) (8-SOFL)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 11.6 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 1683 pF @ 15 V
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| NOIX2SE9400B-LTI1 |
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Hersteller: onsemi
Description: XGS9.4MP, 12PORT, COLOR 0
Packaging: Tray
Package / Case: 163-BCLGA
Type: CMOS
Operating Temperature: -40°C ~ 85°C (TJ)
Voltage - Supply: 1.7V ~ 1.9V, 2.7V ~ 2.9V
Pixel Size: 3.2µm x 3.2µm
Active Pixel Array: 3072H x 3072V
Supplier Device Package: 163-CLGA (20.88x19.9)
Frames per Second: 90.0
Description: XGS9.4MP, 12PORT, COLOR 0
Packaging: Tray
Package / Case: 163-BCLGA
Type: CMOS
Operating Temperature: -40°C ~ 85°C (TJ)
Voltage - Supply: 1.7V ~ 1.9V, 2.7V ~ 2.9V
Pixel Size: 3.2µm x 3.2µm
Active Pixel Array: 3072H x 3072V
Supplier Device Package: 163-CLGA (20.88x19.9)
Frames per Second: 90.0
auf Bestellung 8 Stücke:
Lieferzeit 10-14 Tag (e)| Anzahl | Preis |
|---|---|
| 1+ | 513.13 EUR |
| 8+ | 474.42 EUR |
| NOIX2SN9400B-LTI1 |
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Hersteller: onsemi
Description: XGS9.4MP, 12PORT, MONO 0D
Packaging: Tray
Package / Case: 163-BCLGA
Type: CMOS
Operating Temperature: -40°C ~ 85°C (TJ)
Voltage - Supply: 1.7V ~ 1.9V, 2.7V ~ 2.9V
Pixel Size: 3.2µm x 3.2µm
Active Pixel Array: 3072H x 3072V
Supplier Device Package: 163-CLGA (20.88x19.9)
Frames per Second: 90.0
Description: XGS9.4MP, 12PORT, MONO 0D
Packaging: Tray
Package / Case: 163-BCLGA
Type: CMOS
Operating Temperature: -40°C ~ 85°C (TJ)
Voltage - Supply: 1.7V ~ 1.9V, 2.7V ~ 2.9V
Pixel Size: 3.2µm x 3.2µm
Active Pixel Array: 3072H x 3072V
Supplier Device Package: 163-CLGA (20.88x19.9)
Frames per Second: 90.0
auf Bestellung 3 Stücke:
Lieferzeit 10-14 Tag (e)| Anzahl | Preis |
|---|---|
| 1+ | 513.13 EUR |
| NOIX2SE9400B-LTI |
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Hersteller: onsemi
Description: XGS9.4MP, 12PORT, COLOR 0
Packaging: Tray
Package / Case: 163-BCLGA
Type: CMOS
Operating Temperature: -40°C ~ 85°C (TJ)
Voltage - Supply: 1.7V ~ 1.9V, 2.7V ~ 2.9V
Pixel Size: 3.2µm x 3.2µm
Active Pixel Array: 3072H x 3072V
Supplier Device Package: 163-CLGA (20.88x19.9)
Frames per Second: 90.0
Description: XGS9.4MP, 12PORT, COLOR 0
Packaging: Tray
Package / Case: 163-BCLGA
Type: CMOS
Operating Temperature: -40°C ~ 85°C (TJ)
Voltage - Supply: 1.7V ~ 1.9V, 2.7V ~ 2.9V
Pixel Size: 3.2µm x 3.2µm
Active Pixel Array: 3072H x 3072V
Supplier Device Package: 163-CLGA (20.88x19.9)
Frames per Second: 90.0
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| NOIX2SN9400B-LTI |
![]() |
Hersteller: onsemi
Description: XGS9.4MP, 12PORT, MONO 0D
Packaging: Tray
Package / Case: 163-BCLGA
Type: CMOS
Operating Temperature: -40°C ~ 85°C (TJ)
Voltage - Supply: 1.7V ~ 1.9V, 2.7V ~ 2.9V
Pixel Size: 3.2µm x 3.2µm
Active Pixel Array: 3072H x 3072V
Supplier Device Package: 163-CLGA (20.88x19.9)
Frames per Second: 90.0
Description: XGS9.4MP, 12PORT, MONO 0D
Packaging: Tray
Package / Case: 163-BCLGA
Type: CMOS
Operating Temperature: -40°C ~ 85°C (TJ)
Voltage - Supply: 1.7V ~ 1.9V, 2.7V ~ 2.9V
Pixel Size: 3.2µm x 3.2µm
Active Pixel Array: 3072H x 3072V
Supplier Device Package: 163-CLGA (20.88x19.9)
Frames per Second: 90.0
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| NOIX1SE9400B-LTI |
![]() |
Hersteller: onsemi
Description: XGS9.4MP, 24PORT, COLOR 0
Packaging: Tray
Package / Case: 163-BCLGA
Type: CMOS
Operating Temperature: -40°C ~ 85°C (TJ)
Voltage - Supply: 1.7V ~ 1.9V, 2.7V ~ 2.9V
Pixel Size: 3.2µm x 3.2µm
Active Pixel Array: 3072H x 3072V
Supplier Device Package: 163-CLGA (20.88x19.9)
Frames per Second: 90.0
Description: XGS9.4MP, 24PORT, COLOR 0
Packaging: Tray
Package / Case: 163-BCLGA
Type: CMOS
Operating Temperature: -40°C ~ 85°C (TJ)
Voltage - Supply: 1.7V ~ 1.9V, 2.7V ~ 2.9V
Pixel Size: 3.2µm x 3.2µm
Active Pixel Array: 3072H x 3072V
Supplier Device Package: 163-CLGA (20.88x19.9)
Frames per Second: 90.0
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| NOIX1SN9400B-LTI |
![]() |
Hersteller: onsemi
Description: XGS9.4MP, 24PORT, MONO 0D
Packaging: Tray
Package / Case: 163-BCLGA
Type: CMOS
Operating Temperature: -40°C ~ 85°C (TJ)
Voltage - Supply: 1.7V ~ 1.9V, 2.7V ~ 2.9V
Pixel Size: 3.2µm x 3.2µm
Active Pixel Array: 3072H x 3072V
Supplier Device Package: 163-CLGA (20.88x19.9)
Frames per Second: 90.0
Description: XGS9.4MP, 24PORT, MONO 0D
Packaging: Tray
Package / Case: 163-BCLGA
Type: CMOS
Operating Temperature: -40°C ~ 85°C (TJ)
Voltage - Supply: 1.7V ~ 1.9V, 2.7V ~ 2.9V
Pixel Size: 3.2µm x 3.2µm
Active Pixel Array: 3072H x 3072V
Supplier Device Package: 163-CLGA (20.88x19.9)
Frames per Second: 90.0
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| MC74AC32DR2G-Q |
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Hersteller: onsemi
Description: QUAD 2-INPUT OR GATE
Packaging: Tape & Reel (TR)
Package / Case: 14-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Logic Type: OR Gate
Operating Temperature: -40°C ~ 85°C
Voltage - Supply: 2V ~ 6V
Current - Output High, Low: 24mA, 24mA
Number of Inputs: 2
Supplier Device Package: 14-SOIC
Input Logic Level - High: 2.1V ~ 3.85V
Input Logic Level - Low: 0.9V ~ 1.65V
Max Propagation Delay @ V, Max CL: 7.5ns @ 5V, 50pF
Number of Circuits: 4
Current - Quiescent (Max): 4 µA
Description: QUAD 2-INPUT OR GATE
Packaging: Tape & Reel (TR)
Package / Case: 14-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Logic Type: OR Gate
Operating Temperature: -40°C ~ 85°C
Voltage - Supply: 2V ~ 6V
Current - Output High, Low: 24mA, 24mA
Number of Inputs: 2
Supplier Device Package: 14-SOIC
Input Logic Level - High: 2.1V ~ 3.85V
Input Logic Level - Low: 0.9V ~ 1.65V
Max Propagation Delay @ V, Max CL: 7.5ns @ 5V, 50pF
Number of Circuits: 4
Current - Quiescent (Max): 4 µA
auf Bestellung 2500 Stücke:
Lieferzeit 10-14 Tag (e)| Anzahl | Preis |
|---|---|
| 2500+ | 0.34 EUR |
| MC74AC32DR2G-Q |
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Hersteller: onsemi
Description: QUAD 2-INPUT OR GATE
Packaging: Cut Tape (CT)
Package / Case: 14-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Logic Type: OR Gate
Operating Temperature: -40°C ~ 85°C
Voltage - Supply: 2V ~ 6V
Current - Output High, Low: 24mA, 24mA
Number of Inputs: 2
Supplier Device Package: 14-SOIC
Input Logic Level - High: 2.1V ~ 3.85V
Input Logic Level - Low: 0.9V ~ 1.65V
Max Propagation Delay @ V, Max CL: 7.5ns @ 5V, 50pF
Number of Circuits: 4
Current - Quiescent (Max): 4 µA
Description: QUAD 2-INPUT OR GATE
Packaging: Cut Tape (CT)
Package / Case: 14-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Logic Type: OR Gate
Operating Temperature: -40°C ~ 85°C
Voltage - Supply: 2V ~ 6V
Current - Output High, Low: 24mA, 24mA
Number of Inputs: 2
Supplier Device Package: 14-SOIC
Input Logic Level - High: 2.1V ~ 3.85V
Input Logic Level - Low: 0.9V ~ 1.65V
Max Propagation Delay @ V, Max CL: 7.5ns @ 5V, 50pF
Number of Circuits: 4
Current - Quiescent (Max): 4 µA
auf Bestellung 2500 Stücke:
Lieferzeit 10-14 Tag (e)Im Einkaufswagen Stück im Wert von UAH
| H11D1S |
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Hersteller: onsemi
Description: OPTOISO 5.3KV TRANS W/BASE 6-SMD
Packaging: Tube
Package / Case: 6-SMD, Gull Wing
Output Type: Transistor with Base
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 100°C
Voltage - Forward (Vf) (Typ): 1.15V
Input Type: DC
Current - Output / Channel: 100mA
Voltage - Isolation: 5300Vrms
Current Transfer Ratio (Min): 20% @ 10mA
Vce Saturation (Max): 400mV
Supplier Device Package: 6-SMD
Voltage - Output (Max): 300V
Turn On / Turn Off Time (Typ): 5µs, 5µs
Number of Channels: 1
Current - DC Forward (If) (Max): 80 mA
Description: OPTOISO 5.3KV TRANS W/BASE 6-SMD
Packaging: Tube
Package / Case: 6-SMD, Gull Wing
Output Type: Transistor with Base
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 100°C
Voltage - Forward (Vf) (Typ): 1.15V
Input Type: DC
Current - Output / Channel: 100mA
Voltage - Isolation: 5300Vrms
Current Transfer Ratio (Min): 20% @ 10mA
Vce Saturation (Max): 400mV
Supplier Device Package: 6-SMD
Voltage - Output (Max): 300V
Turn On / Turn Off Time (Typ): 5µs, 5µs
Number of Channels: 1
Current - DC Forward (If) (Max): 80 mA
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| FDMS7682-NC |
![]() |
Hersteller: onsemi
Description: PT7 30V/20V NCH ER TREN M
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 16A (Ta), 22A (Tc)
Rds On (Max) @ Id, Vgs: 6.3mOhm @ 14A, 10V
Power Dissipation (Max): 2.5W (Ta), 33W (Tc)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: 8-PQFN (5x6)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 30 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1885 pF @ 15 V
Description: PT7 30V/20V NCH ER TREN M
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 16A (Ta), 22A (Tc)
Rds On (Max) @ Id, Vgs: 6.3mOhm @ 14A, 10V
Power Dissipation (Max): 2.5W (Ta), 33W (Tc)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: 8-PQFN (5x6)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 30 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1885 pF @ 15 V
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| FDMS7682-NC |
![]() |
Hersteller: onsemi
Description: PT7 30V/20V NCH ER TREN M
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 16A (Ta), 22A (Tc)
Rds On (Max) @ Id, Vgs: 6.3mOhm @ 14A, 10V
Power Dissipation (Max): 2.5W (Ta), 33W (Tc)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: 8-PQFN (5x6)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 30 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1885 pF @ 15 V
Description: PT7 30V/20V NCH ER TREN M
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 16A (Ta), 22A (Tc)
Rds On (Max) @ Id, Vgs: 6.3mOhm @ 14A, 10V
Power Dissipation (Max): 2.5W (Ta), 33W (Tc)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: 8-PQFN (5x6)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 30 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1885 pF @ 15 V
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| NLV14052BDR2G |
![]() |
Hersteller: onsemi
Description: IC SWITCH DP4T 280OHM 16SOIC
Packaging: Bulk
Package / Case: 16-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 125°C (TA)
On-State Resistance (Max): 280Ohm
-3db Bandwidth: 17MHz
Supplier Device Package: 16-SOIC
Voltage - Supply, Single (V+): 3V ~ 18V
Switch Circuit: DP4T
Multiplexer/Demultiplexer Circuit: 2:4
Channel-to-Channel Matching (ΔRon): 10Ohm
Channel Capacitance (CS(off), CD(off)): 7.5pF
Current - Leakage (IS(off)) (Max): 100nA
Grade: Automotive
Number of Circuits: 2
Qualification: AEC-Q100
Description: IC SWITCH DP4T 280OHM 16SOIC
Packaging: Bulk
Package / Case: 16-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 125°C (TA)
On-State Resistance (Max): 280Ohm
-3db Bandwidth: 17MHz
Supplier Device Package: 16-SOIC
Voltage - Supply, Single (V+): 3V ~ 18V
Switch Circuit: DP4T
Multiplexer/Demultiplexer Circuit: 2:4
Channel-to-Channel Matching (ΔRon): 10Ohm
Channel Capacitance (CS(off), CD(off)): 7.5pF
Current - Leakage (IS(off)) (Max): 100nA
Grade: Automotive
Number of Circuits: 2
Qualification: AEC-Q100
auf Bestellung 241398 Stücke:
Lieferzeit 10-14 Tag (e)| Anzahl | Preis |
|---|---|
| 621+ | 0.73 EUR |
| NTMYS3D8N04CLTWG |
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Hersteller: onsemi
Description: MOSFET N-CH 40V 22A/87A 4LFPAK
Packaging: Tape & Reel (TR)
Package / Case: SOT-1023, 4-LFPAK
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 22A (Ta), 87A (Tc)
Rds On (Max) @ Id, Vgs: 3.7mOhm @ 20A, 10V
Power Dissipation (Max): 3.6W (Ta), 55W (Tc)
Vgs(th) (Max) @ Id: 2V @ 50µA
Supplier Device Package: LFPAK4 (5x6)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): 20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 18 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1600 pF @ 25 V
Description: MOSFET N-CH 40V 22A/87A 4LFPAK
Packaging: Tape & Reel (TR)
Package / Case: SOT-1023, 4-LFPAK
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 22A (Ta), 87A (Tc)
Rds On (Max) @ Id, Vgs: 3.7mOhm @ 20A, 10V
Power Dissipation (Max): 3.6W (Ta), 55W (Tc)
Vgs(th) (Max) @ Id: 2V @ 50µA
Supplier Device Package: LFPAK4 (5x6)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): 20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 18 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1600 pF @ 25 V
auf Bestellung 3000 Stücke:
Lieferzeit 10-14 Tag (e)| Anzahl | Preis |
|---|---|
| 3000+ | 0.88 EUR |
| NTMYS3D8N04CLTWG |
![]() |
Hersteller: onsemi
Description: MOSFET N-CH 40V 22A/87A 4LFPAK
Packaging: Cut Tape (CT)
Package / Case: SOT-1023, 4-LFPAK
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 22A (Ta), 87A (Tc)
Rds On (Max) @ Id, Vgs: 3.7mOhm @ 20A, 10V
Power Dissipation (Max): 3.6W (Ta), 55W (Tc)
Vgs(th) (Max) @ Id: 2V @ 50µA
Supplier Device Package: LFPAK4 (5x6)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): 20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 18 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1600 pF @ 25 V
Description: MOSFET N-CH 40V 22A/87A 4LFPAK
Packaging: Cut Tape (CT)
Package / Case: SOT-1023, 4-LFPAK
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 22A (Ta), 87A (Tc)
Rds On (Max) @ Id, Vgs: 3.7mOhm @ 20A, 10V
Power Dissipation (Max): 3.6W (Ta), 55W (Tc)
Vgs(th) (Max) @ Id: 2V @ 50µA
Supplier Device Package: LFPAK4 (5x6)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): 20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 18 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1600 pF @ 25 V
auf Bestellung 5980 Stücke:
Lieferzeit 10-14 Tag (e)| Anzahl | Preis |
|---|---|
| 6+ | 3.15 EUR |
| 10+ | 2.01 EUR |
| 100+ | 1.36 EUR |
| 500+ | 1.08 EUR |
| 1000+ | 1.02 EUR |
| NVMFS5C456NLWFET1G |
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Hersteller: onsemi
Description: MOSFET N-CH 40V 5DFN
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN, 5 Leads
Mounting Type: Surface Mount, Wettable Flank
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 22A (Ta), 87A (Tc)
Rds On (Max) @ Id, Vgs: 3.7mOhm @ 20A, 10V
Power Dissipation (Max): 3.6W (Ta), 55W (Tc)
Vgs(th) (Max) @ Id: 2V @ 50µA
Supplier Device Package: 5-DFNW (4.9x5.9) (8-SOFL-WF)
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 18 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1600 pF @ 25 V
Qualification: AEC-Q101
Description: MOSFET N-CH 40V 5DFN
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN, 5 Leads
Mounting Type: Surface Mount, Wettable Flank
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 22A (Ta), 87A (Tc)
Rds On (Max) @ Id, Vgs: 3.7mOhm @ 20A, 10V
Power Dissipation (Max): 3.6W (Ta), 55W (Tc)
Vgs(th) (Max) @ Id: 2V @ 50µA
Supplier Device Package: 5-DFNW (4.9x5.9) (8-SOFL-WF)
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 18 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1600 pF @ 25 V
Qualification: AEC-Q101
auf Bestellung 22500 Stücke:
Lieferzeit 10-14 Tag (e)| Anzahl | Preis |
|---|---|
| 1500+ | 0.58 EUR |
| 3000+ | 0.53 EUR |
| 4500+ | 0.51 EUR |
| 7500+ | 0.48 EUR |
| 10500+ | 0.47 EUR |
| NVMFS5C456NLWFET1G |
![]() |
Hersteller: onsemi
Description: MOSFET N-CH 40V 5DFN
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN, 5 Leads
Mounting Type: Surface Mount, Wettable Flank
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 22A (Ta), 87A (Tc)
Rds On (Max) @ Id, Vgs: 3.7mOhm @ 20A, 10V
Power Dissipation (Max): 3.6W (Ta), 55W (Tc)
Vgs(th) (Max) @ Id: 2V @ 50µA
Supplier Device Package: 5-DFNW (4.9x5.9) (8-SOFL-WF)
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 18 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1600 pF @ 25 V
Qualification: AEC-Q101
Description: MOSFET N-CH 40V 5DFN
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN, 5 Leads
Mounting Type: Surface Mount, Wettable Flank
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 22A (Ta), 87A (Tc)
Rds On (Max) @ Id, Vgs: 3.7mOhm @ 20A, 10V
Power Dissipation (Max): 3.6W (Ta), 55W (Tc)
Vgs(th) (Max) @ Id: 2V @ 50µA
Supplier Device Package: 5-DFNW (4.9x5.9) (8-SOFL-WF)
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 18 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1600 pF @ 25 V
Qualification: AEC-Q101
auf Bestellung 22500 Stücke:
Lieferzeit 10-14 Tag (e)| Anzahl | Preis |
|---|---|
| 9+ | 2.06 EUR |
| 14+ | 1.3 EUR |
| 100+ | 0.86 EUR |
| 500+ | 0.67 EUR |
| NVMFS5C456NLWFHT1G |
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Hersteller: onsemi
Description: T6 40V NCH LL IN U8FL
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN, 5 Leads
Mounting Type: Surface Mount, Wettable Flank
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 22A (Ta), 87A (Tc)
Rds On (Max) @ Id, Vgs: 3.7mOhm @ 20A, 10V
Power Dissipation (Max): 3.6W (Ta), 55W (Tc)
Vgs(th) (Max) @ Id: 2V @ 50µA
Supplier Device Package: 5-DFNW (4.9x5.9) (8-SOFL-WF)
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 18 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1600 pF @ 25 V
Qualification: AEC-Q101
Description: T6 40V NCH LL IN U8FL
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN, 5 Leads
Mounting Type: Surface Mount, Wettable Flank
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 22A (Ta), 87A (Tc)
Rds On (Max) @ Id, Vgs: 3.7mOhm @ 20A, 10V
Power Dissipation (Max): 3.6W (Ta), 55W (Tc)
Vgs(th) (Max) @ Id: 2V @ 50µA
Supplier Device Package: 5-DFNW (4.9x5.9) (8-SOFL-WF)
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 18 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1600 pF @ 25 V
Qualification: AEC-Q101
auf Bestellung 25500 Stücke:
Lieferzeit 10-14 Tag (e)| Anzahl | Preis |
|---|---|
| 1500+ | 0.85 EUR |
| 3000+ | 0.79 EUR |
| 4500+ | 0.76 EUR |
| 7500+ | 0.74 EUR |
| NVMFS5C456NLWFHT1G |
![]() |
Hersteller: onsemi
Description: T6 40V NCH LL IN U8FL
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN, 5 Leads
Mounting Type: Surface Mount, Wettable Flank
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 22A (Ta), 87A (Tc)
Rds On (Max) @ Id, Vgs: 3.7mOhm @ 20A, 10V
Power Dissipation (Max): 3.6W (Ta), 55W (Tc)
Vgs(th) (Max) @ Id: 2V @ 50µA
Supplier Device Package: 5-DFNW (4.9x5.9) (8-SOFL-WF)
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 18 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1600 pF @ 25 V
Qualification: AEC-Q101
Description: T6 40V NCH LL IN U8FL
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN, 5 Leads
Mounting Type: Surface Mount, Wettable Flank
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 22A (Ta), 87A (Tc)
Rds On (Max) @ Id, Vgs: 3.7mOhm @ 20A, 10V
Power Dissipation (Max): 3.6W (Ta), 55W (Tc)
Vgs(th) (Max) @ Id: 2V @ 50µA
Supplier Device Package: 5-DFNW (4.9x5.9) (8-SOFL-WF)
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 18 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1600 pF @ 25 V
Qualification: AEC-Q101
auf Bestellung 25500 Stücke:
Lieferzeit 10-14 Tag (e)| Anzahl | Preis |
|---|---|
| 7+ | 2.89 EUR |
| 10+ | 1.83 EUR |
| 100+ | 1.24 EUR |
| 500+ | 0.98 EUR |
| NVMFS5C456NLET1G-YE |
![]() |
Hersteller: onsemi
Description: T6 40V NCH LL IN S08FL
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN, 5 Leads
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 22A (Ta), 87A (Tc)
Rds On (Max) @ Id, Vgs: 3.7mOhm @ 20A, 10V
Power Dissipation (Max): 3.6W (Ta), 55W (Tc)
Vgs(th) (Max) @ Id: 2V @ 50µA
Supplier Device Package: 5-DFN (5x6) (8-SOFL)
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 18 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1600 pF @ 25 V
Qualification: AEC-Q101
Description: T6 40V NCH LL IN S08FL
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN, 5 Leads
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 22A (Ta), 87A (Tc)
Rds On (Max) @ Id, Vgs: 3.7mOhm @ 20A, 10V
Power Dissipation (Max): 3.6W (Ta), 55W (Tc)
Vgs(th) (Max) @ Id: 2V @ 50µA
Supplier Device Package: 5-DFN (5x6) (8-SOFL)
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 18 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1600 pF @ 25 V
Qualification: AEC-Q101
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| NVMFS5C456NLET1G-YE |
![]() |
Hersteller: onsemi
Description: T6 40V NCH LL IN S08FL
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN, 5 Leads
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 22A (Ta), 87A (Tc)
Rds On (Max) @ Id, Vgs: 3.7mOhm @ 20A, 10V
Power Dissipation (Max): 3.6W (Ta), 55W (Tc)
Vgs(th) (Max) @ Id: 2V @ 50µA
Supplier Device Package: 5-DFN (5x6) (8-SOFL)
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 18 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1600 pF @ 25 V
Qualification: AEC-Q101
Description: T6 40V NCH LL IN S08FL
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN, 5 Leads
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 22A (Ta), 87A (Tc)
Rds On (Max) @ Id, Vgs: 3.7mOhm @ 20A, 10V
Power Dissipation (Max): 3.6W (Ta), 55W (Tc)
Vgs(th) (Max) @ Id: 2V @ 50µA
Supplier Device Package: 5-DFN (5x6) (8-SOFL)
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 18 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1600 pF @ 25 V
Qualification: AEC-Q101
Produkt ist nicht verfügbar
Im Einkaufswagen
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| MC74LCX573DWG |
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Hersteller: onsemi
Description: IC D-TYPE TRANSP 8:8 20-SOIC
Packaging: Bulk
Package / Case: 20-SOIC (0.295", 7.50mm Width)
Output Type: Tri-State
Mounting Type: Surface Mount
Circuit: 8:8
Logic Type: D-Type Transparent Latch
Operating Temperature: -55°C ~ 125°C
Voltage - Supply: 2V ~ 3.6V
Independent Circuits: 1
Current - Output High, Low: 24mA, 24mA
Delay Time - Propagation: 1.5ns
Supplier Device Package: 20-SOIC
Description: IC D-TYPE TRANSP 8:8 20-SOIC
Packaging: Bulk
Package / Case: 20-SOIC (0.295", 7.50mm Width)
Output Type: Tri-State
Mounting Type: Surface Mount
Circuit: 8:8
Logic Type: D-Type Transparent Latch
Operating Temperature: -55°C ~ 125°C
Voltage - Supply: 2V ~ 3.6V
Independent Circuits: 1
Current - Output High, Low: 24mA, 24mA
Delay Time - Propagation: 1.5ns
Supplier Device Package: 20-SOIC
auf Bestellung 40329 Stücke:
Lieferzeit 10-14 Tag (e)| Anzahl | Preis |
|---|---|
| 412+ | 1.11 EUR |
| MC74VHCT373ADTRG |
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Hersteller: onsemi
Description: IC D-TYPE TRANSP 8:8 20-TSSOP
Packaging: Bulk
Package / Case: 20-TSSOP (0.173", 4.40mm Width)
Output Type: Tri-State
Mounting Type: Surface Mount
Circuit: 8:8
Logic Type: D-Type Transparent Latch
Operating Temperature: -40°C ~ 85°C
Voltage - Supply: 4.5V ~ 5.5V
Independent Circuits: 1
Current - Output High, Low: 8mA, 8mA
Delay Time - Propagation: 5.1ns
Supplier Device Package: 20-TSSOP
Description: IC D-TYPE TRANSP 8:8 20-TSSOP
Packaging: Bulk
Package / Case: 20-TSSOP (0.173", 4.40mm Width)
Output Type: Tri-State
Mounting Type: Surface Mount
Circuit: 8:8
Logic Type: D-Type Transparent Latch
Operating Temperature: -40°C ~ 85°C
Voltage - Supply: 4.5V ~ 5.5V
Independent Circuits: 1
Current - Output High, Low: 8mA, 8mA
Delay Time - Propagation: 5.1ns
Supplier Device Package: 20-TSSOP
auf Bestellung 22676 Stücke:
Lieferzeit 10-14 Tag (e)| Anzahl | Preis |
|---|---|
| 494+ | 0.93 EUR |
| 74LVTH373MTC |
![]() |
Hersteller: onsemi
Description: IC D-TYPE TRANSP 8:8 20-TSSOP
Packaging: Bulk
Package / Case: 20-TSSOP (0.173", 4.40mm Width)
Output Type: Tri-State
Mounting Type: Surface Mount
Circuit: 8:8
Logic Type: D-Type Transparent Latch
Operating Temperature: -40°C ~ 85°C
Voltage - Supply: 2.7V ~ 3.6V
Independent Circuits: 1
Current - Output High, Low: 32mA, 64mA
Delay Time - Propagation: 1.5ns
Supplier Device Package: 20-TSSOP
Description: IC D-TYPE TRANSP 8:8 20-TSSOP
Packaging: Bulk
Package / Case: 20-TSSOP (0.173", 4.40mm Width)
Output Type: Tri-State
Mounting Type: Surface Mount
Circuit: 8:8
Logic Type: D-Type Transparent Latch
Operating Temperature: -40°C ~ 85°C
Voltage - Supply: 2.7V ~ 3.6V
Independent Circuits: 1
Current - Output High, Low: 32mA, 64mA
Delay Time - Propagation: 1.5ns
Supplier Device Package: 20-TSSOP
auf Bestellung 7050 Stücke:
Lieferzeit 10-14 Tag (e)| Anzahl | Preis |
|---|---|
| 469+ | 0.97 EUR |
| 74LVX373M |
![]() |
Hersteller: onsemi
Description: IC D-TYPE TRANSP 8:8 20-SOIC
Packaging: Bulk
Package / Case: 20-SOIC (0.295", 7.50mm Width)
Output Type: Tri-State
Mounting Type: Surface Mount
Circuit: 8:8
Logic Type: D-Type Transparent Latch
Operating Temperature: -40°C ~ 85°C
Voltage - Supply: 2V ~ 3.6V
Independent Circuits: 1
Current - Output High, Low: 4mA, 4mA
Delay Time - Propagation: 6ns
Supplier Device Package: 20-SOIC
Description: IC D-TYPE TRANSP 8:8 20-SOIC
Packaging: Bulk
Package / Case: 20-SOIC (0.295", 7.50mm Width)
Output Type: Tri-State
Mounting Type: Surface Mount
Circuit: 8:8
Logic Type: D-Type Transparent Latch
Operating Temperature: -40°C ~ 85°C
Voltage - Supply: 2V ~ 3.6V
Independent Circuits: 1
Current - Output High, Low: 4mA, 4mA
Delay Time - Propagation: 6ns
Supplier Device Package: 20-SOIC
auf Bestellung 27755 Stücke:
Lieferzeit 10-14 Tag (e)| Anzahl | Preis |
|---|---|
| 427+ | 1.06 EUR |
| 74LVX373M |
![]() |
Hersteller: onsemi
Description: IC D-TYPE TRANSP 8:8 20-SOIC
Packaging: Tube
Package / Case: 20-SOIC (0.295", 7.50mm Width)
Output Type: Tri-State
Mounting Type: Surface Mount
Circuit: 8:8
Logic Type: D-Type Transparent Latch
Operating Temperature: -40°C ~ 85°C
Voltage - Supply: 2V ~ 3.6V
Independent Circuits: 1
Current - Output High, Low: 4mA, 4mA
Delay Time - Propagation: 6ns
Supplier Device Package: 20-SOIC
Description: IC D-TYPE TRANSP 8:8 20-SOIC
Packaging: Tube
Package / Case: 20-SOIC (0.295", 7.50mm Width)
Output Type: Tri-State
Mounting Type: Surface Mount
Circuit: 8:8
Logic Type: D-Type Transparent Latch
Operating Temperature: -40°C ~ 85°C
Voltage - Supply: 2V ~ 3.6V
Independent Circuits: 1
Current - Output High, Low: 4mA, 4mA
Delay Time - Propagation: 6ns
Supplier Device Package: 20-SOIC
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
































