Produkte > ONSEMI > Alle Produkte des Herstellers ONSEMI (138692) > Seite 1290 nach 2312

Wählen Sie Seite:   [  << Vorherige Seite ]  1 231 462 693 924 1155 1285 1286 1287 1288 1289 1290 1291 1292 1293 1294 1295 1386 1617 1848 2079 2310 2312  [ Nächste Seite >> ]
Foto Bezeichnung Hersteller Beschreibung Verfügbarkeit
Preis
NSVMUN5333DW1T3G NSVMUN5333DW1T3G onsemi dtc143zp-d.pdf Description: TRANS PREBIAS 1NPN 1PNP SOT-363
Packaging: Cut Tape (CT)
Package / Case: 6-TSSOP, SC-88, SOT-363
Mounting Type: Surface Mount
Transistor Type: 1 NPN, 1 PNP - Pre-Biased (Dual)
Power - Max: 250mW
Current - Collector (Ic) (Max): 100mA
Voltage - Collector Emitter Breakdown (Max): 50V
Vce Saturation (Max) @ Ib, Ic: 250mV @ 1mA, 10mA
Current - Collector Cutoff (Max): 500nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 5mA, 10V
Resistor - Base (R1): 4.7kOhms
Resistor - Emitter Base (R2): 47kOhms
Supplier Device Package: SC-88/SC70-6/SOT-363
Grade: Automotive
Qualification: AEC-Q101
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
SMUN5330DW1T1G SMUN5330DW1T1G onsemi dtc113ep-d.pdf Description: TRANS PREBIAS 1NPN 1PNP SOT-363
Packaging: Tape & Reel (TR)
Package / Case: 6-TSSOP, SC-88, SOT-363
Mounting Type: Surface Mount
Transistor Type: 1 NPN, 1 PNP - Pre-Biased (Dual)
Power - Max: 187mW
Current - Collector (Ic) (Max): 100mA
Voltage - Collector Emitter Breakdown (Max): 50V
Vce Saturation (Max) @ Ib, Ic: 250mV @ 5mA, 10mA
Current - Collector Cutoff (Max): 500nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 3 @ 5mA, 10V
Resistor - Base (R1): 1kOhms
Resistor - Emitter Base (R2): 1kOhms
Supplier Device Package: SC-88/SC70-6/SOT-363
Grade: Automotive
Qualification: AEC-Q101
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
SMUN5330DW1T1G SMUN5330DW1T1G onsemi dtc113ep-d.pdf Description: TRANS PREBIAS 1NPN 1PNP SOT-363
Packaging: Cut Tape (CT)
Package / Case: 6-TSSOP, SC-88, SOT-363
Mounting Type: Surface Mount
Transistor Type: 1 NPN, 1 PNP - Pre-Biased (Dual)
Power - Max: 187mW
Current - Collector (Ic) (Max): 100mA
Voltage - Collector Emitter Breakdown (Max): 50V
Vce Saturation (Max) @ Ib, Ic: 250mV @ 5mA, 10mA
Current - Collector Cutoff (Max): 500nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 3 @ 5mA, 10V
Resistor - Base (R1): 1kOhms
Resistor - Emitter Base (R2): 1kOhms
Supplier Device Package: SC-88/SC70-6/SOT-363
Grade: Automotive
Qualification: AEC-Q101
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
NSVMUN5332DW1T3G NSVMUN5332DW1T3G onsemi dtc143ep-d.pdf Description: TRANS PREBIAS 1NPN 1PNP SOT-363
Packaging: Tape & Reel (TR)
Package / Case: 6-TSSOP, SC-88, SOT-363
Mounting Type: Surface Mount
Transistor Type: 1 NPN, 1 PNP - Pre-Biased (Dual)
Power - Max: 385mW
Current - Collector (Ic) (Max): 100mA
Voltage - Collector Emitter Breakdown (Max): 50V
Vce Saturation (Max) @ Ib, Ic: 250mV @ 1mA, 10mA
Current - Collector Cutoff (Max): 500nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 15 @ 5mA, 10V
Resistor - Base (R1): 4.7kOhms
Resistor - Emitter Base (R2): 4.7kOhms
Supplier Device Package: SC-88/SC70-6/SOT-363
Grade: Automotive
Qualification: AEC-Q101
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
NSVMUN5332DW1T3G NSVMUN5332DW1T3G onsemi dtc143ep-d.pdf Description: TRANS PREBIAS 1NPN 1PNP SOT-363
Packaging: Cut Tape (CT)
Package / Case: 6-TSSOP, SC-88, SOT-363
Mounting Type: Surface Mount
Transistor Type: 1 NPN, 1 PNP - Pre-Biased (Dual)
Power - Max: 385mW
Current - Collector (Ic) (Max): 100mA
Voltage - Collector Emitter Breakdown (Max): 50V
Vce Saturation (Max) @ Ib, Ic: 250mV @ 1mA, 10mA
Current - Collector Cutoff (Max): 500nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 15 @ 5mA, 10V
Resistor - Base (R1): 4.7kOhms
Resistor - Emitter Base (R2): 4.7kOhms
Supplier Device Package: SC-88/SC70-6/SOT-363
Grade: Automotive
Qualification: AEC-Q101
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
SB360 SB360 onsemi SB380-D.pdf Description: DIODE SCHOTTKY 60V 3A DO201AD
Packaging: Tape & Reel (TR)
Package / Case: DO-201AD, Axial
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Capacitance @ Vr, F: 180pF @ 4V, 1MHz
Current - Average Rectified (Io): 3A
Supplier Device Package: DO-201AD
Operating Temperature - Junction: -65°C ~ 125°C
Voltage - DC Reverse (Vr) (Max): 60 V
Voltage - Forward (Vf) (Max) @ If: 740 mV @ 3 A
Current - Reverse Leakage @ Vr: 500 µA @ 60 V
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
NSBC114EMXWTBG NSBC114EMXWTBG onsemi NSBCMXW-D.PDF Description: BIAS RESISTOR TRANSISTORS (BRT)
Packaging: Bulk
Package / Case: 3-XFDFN
Mounting Type: Surface Mount, Wettable Flank
Transistor Type: NPN - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 250mV @ 300µA, 10mA
Current - Collector Cutoff (Max): 500nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 35 @ 5mA, 10V
Supplier Device Package: 3-XDFNW (1x1)
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 450 mW
Resistor - Base (R1): 10 kOhms
Resistor - Emitter Base (R2): 10 kOhms
Resistors Included: R1 and R2
auf Bestellung 96000 Stücke:
Lieferzeit 10-14 Tag (e)
53+0.33 EUR
79+0.22 EUR
89+0.2 EUR
104+0.17 EUR
250+0.16 EUR
500+0.15 EUR
1000+0.14 EUR
2500+0.13 EUR
Mindestbestellmenge: 53
Im Einkaufswagen  Stück im Wert von  UAH
NSVBC114EMXWTBG NSVBC114EMXWTBG onsemi NSBCMXW-D.PDF Description: BIAS RESISTOR TRANSISTORS (BRT)
Packaging: Bulk
Package / Case: 3-XFDFN
Mounting Type: Surface Mount, Wettable Flank
Transistor Type: NPN - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 250mV @ 300µA, 10mA
Current - Collector Cutoff (Max): 500nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 35 @ 5mA, 10V
Supplier Device Package: 3-XDFNW (1x1)
Grade: Automotive
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 450 mW
Resistor - Base (R1): 10 kOhms
Resistor - Emitter Base (R2): 10 kOhms
Qualification: AEC-Q101
Resistors Included: R1 and R2
auf Bestellung 84000 Stücke:
Lieferzeit 10-14 Tag (e)
22+0.81 EUR
36+0.49 EUR
100+0.31 EUR
500+0.24 EUR
1000+0.21 EUR
2000+0.19 EUR
5000+0.17 EUR
10000+0.15 EUR
50000+0.13 EUR
Mindestbestellmenge: 22
Im Einkaufswagen  Stück im Wert von  UAH
NSVBC114EPDXV6T1G NSVBC114EPDXV6T1G onsemi dtc114ep-d.pdf Description: TRANS PREBIAS 1NPN 1PNP SOT-563
Packaging: Tape & Reel (TR)
Package / Case: SOT-563, SOT-666
Mounting Type: Surface Mount
Transistor Type: 1 NPN, 1 PNP - Pre-Biased (Dual)
Power - Max: 500mW
Current - Collector (Ic) (Max): 100mA
Voltage - Collector Emitter Breakdown (Max): 50V
Vce Saturation (Max) @ Ib, Ic: 250mV @ 300µA, 10mA
Current - Collector Cutoff (Max): 500nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 35 @ 5mA, 10V
Resistor - Base (R1): 10kOhms
Resistor - Emitter Base (R2): 10kOhms
Supplier Device Package: SOT-563
Grade: Automotive
Qualification: AEC-Q101
auf Bestellung 100000 Stücke:
Lieferzeit 10-14 Tag (e)
4000+0.12 EUR
8000+0.11 EUR
12000+0.1 EUR
20000+0.097 EUR
28000+0.094 EUR
40000+0.09 EUR
100000+0.082 EUR
Mindestbestellmenge: 4000
Im Einkaufswagen  Stück im Wert von  UAH
NSVBC114EPDXV6T1G NSVBC114EPDXV6T1G onsemi dtc114ep-d.pdf Description: TRANS PREBIAS 1NPN 1PNP SOT-563
Packaging: Cut Tape (CT)
Package / Case: SOT-563, SOT-666
Mounting Type: Surface Mount
Transistor Type: 1 NPN, 1 PNP - Pre-Biased (Dual)
Power - Max: 500mW
Current - Collector (Ic) (Max): 100mA
Voltage - Collector Emitter Breakdown (Max): 50V
Vce Saturation (Max) @ Ib, Ic: 250mV @ 300µA, 10mA
Current - Collector Cutoff (Max): 500nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 35 @ 5mA, 10V
Resistor - Base (R1): 10kOhms
Resistor - Emitter Base (R2): 10kOhms
Supplier Device Package: SOT-563
Grade: Automotive
Qualification: AEC-Q101
auf Bestellung 103540 Stücke:
Lieferzeit 10-14 Tag (e)
30+0.6 EUR
49+0.36 EUR
100+0.23 EUR
500+0.17 EUR
1000+0.15 EUR
2000+0.13 EUR
Mindestbestellmenge: 30
Im Einkaufswagen  Stück im Wert von  UAH
NSVBC114TDXV6T1G NSVBC114TDXV6T1G onsemi dtc114td-d.pdf Description: TRANS PREBIAS 2NPN 50V SOT-563
Packaging: Tape & Reel (TR)
Package / Case: SOT-563, SOT-666
Mounting Type: Surface Mount
Transistor Type: 2 NPN - Pre-Biased
Power - Max: 357mW
Current - Collector (Ic) (Max): 100mA
Voltage - Collector Emitter Breakdown (Max): 50V
Vce Saturation (Max) @ Ib, Ic: 250mV @ 300µA, 10mA
Current - Collector Cutoff (Max): 500nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 160 @ 5mA, 10V
Resistor - Base (R1): 10kOhms
Supplier Device Package: SOT-563
Grade: Automotive
Qualification: AEC-Q101
auf Bestellung 4000 Stücke:
Lieferzeit 10-14 Tag (e)
4000+0.17 EUR
Mindestbestellmenge: 4000
Im Einkaufswagen  Stück im Wert von  UAH
NSVBC114TDXV6T1G NSVBC114TDXV6T1G onsemi dtc114td-d.pdf Description: TRANS PREBIAS 2NPN 50V SOT-563
Packaging: Cut Tape (CT)
Package / Case: SOT-563, SOT-666
Mounting Type: Surface Mount
Transistor Type: 2 NPN - Pre-Biased
Power - Max: 357mW
Current - Collector (Ic) (Max): 100mA
Voltage - Collector Emitter Breakdown (Max): 50V
Vce Saturation (Max) @ Ib, Ic: 250mV @ 300µA, 10mA
Current - Collector Cutoff (Max): 500nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 160 @ 5mA, 10V
Resistor - Base (R1): 10kOhms
Supplier Device Package: SOT-563
Grade: Automotive
Qualification: AEC-Q101
auf Bestellung 4000 Stücke:
Lieferzeit 10-14 Tag (e)
23+0.79 EUR
37+0.49 EUR
100+0.31 EUR
500+0.23 EUR
1000+0.21 EUR
2000+0.19 EUR
Mindestbestellmenge: 23
Im Einkaufswagen  Stück im Wert von  UAH
NSVBC114YPDXV65G NSVBC114YPDXV65G onsemi DTC114YP-D.PDF Description: TRANS PREBIAS 1NPN 1PNP SOT-563
Packaging: Bulk
Package / Case: SOT-563, SOT-666
Mounting Type: Surface Mount
Transistor Type: 1 NPN, 1 PNP - Pre-Biased (Dual)
Power - Max: 500mW
Current - Collector (Ic) (Max): 100mA
Voltage - Collector Emitter Breakdown (Max): 50V
Vce Saturation (Max) @ Ib, Ic: 250mV @ 300µA, 10mA
Current - Collector Cutoff (Max): 500nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 5mA, 10V
Resistor - Base (R1): 10kOhms
Resistor - Emitter Base (R2): 47kOhms
Supplier Device Package: SOT-563
Grade: Automotive
Qualification: AEC-Q101
auf Bestellung 48000 Stücke:
Lieferzeit 10-14 Tag (e)
4537+0.1 EUR
Mindestbestellmenge: 4537
Im Einkaufswagen  Stück im Wert von  UAH
NSBC114TDXV6T5G NSBC114TDXV6T5G onsemi dtc114td-d.pdf Description: TRANS PREBIAS 2NPN 50V SOT-563
Packaging: Bulk
Package / Case: SOT-563, SOT-666
Mounting Type: Surface Mount
Transistor Type: 2 NPN - Pre-Biased (Dual)
Power - Max: 500mW
Current - Collector (Ic) (Max): 100mA
Voltage - Collector Emitter Breakdown (Max): 50V
Vce Saturation (Max) @ Ib, Ic: 250mV @ 1mA, 10mA
Current - Collector Cutoff (Max): 500nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 160 @ 5mA, 10V
Resistor - Base (R1): 10kOhms
Supplier Device Package: SOT-563
auf Bestellung 40000 Stücke:
Lieferzeit 10-14 Tag (e)
3692+0.12 EUR
Mindestbestellmenge: 3692
Im Einkaufswagen  Stück im Wert von  UAH
NSBC114YDXV6T5G NSBC114YDXV6T5G onsemi dtc114yd-d.pdf Description: TRANS PREBIAS 2NPN 50V SOT-563
Packaging: Bulk
Package / Case: SOT-563, SOT-666
Mounting Type: Surface Mount
Transistor Type: 2 NPN - Pre-Biased (Dual)
Power - Max: 500mW
Current - Collector (Ic) (Max): 100mA
Voltage - Collector Emitter Breakdown (Max): 50V
Vce Saturation (Max) @ Ib, Ic: 250mV @ 300µA, 10mA
Current - Collector Cutoff (Max): 500nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 5mA, 10V
Resistor - Base (R1): 10kOhms
Resistor - Emitter Base (R2): 47kOhms
Supplier Device Package: SOT-563
auf Bestellung 39761 Stücke:
Lieferzeit 10-14 Tag (e)
3692+0.12 EUR
Mindestbestellmenge: 3692
Im Einkaufswagen  Stück im Wert von  UAH
NSBC114YPDXV6T5G NSBC114YPDXV6T5G onsemi dtc114yp-d.pdf Description: TRANS PREBIAS 1NPN 1PNP SOT-563
Packaging: Bulk
Package / Case: SOT-563, SOT-666
Mounting Type: Surface Mount
Transistor Type: 1 NPN, 1 PNP - Pre-Biased (Dual)
Power - Max: 500mW
Current - Collector (Ic) (Max): 100mA
Voltage - Collector Emitter Breakdown (Max): 50V
Vce Saturation (Max) @ Ib, Ic: 250mV @ 300µA, 10mA
Current - Collector Cutoff (Max): 500nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 5mA, 10V
Resistor - Base (R1): 10kOhms
Resistor - Emitter Base (R2): 47kOhms
Supplier Device Package: SOT-563
auf Bestellung 29000 Stücke:
Lieferzeit 10-14 Tag (e)
3692+0.12 EUR
Mindestbestellmenge: 3692
Im Einkaufswagen  Stück im Wert von  UAH
NSBC114YPDXV6T1 NSBC114YPDXV6T1 onsemi NSBC114EPDXV6T1%2C5_Series.pdf Description: TRANS PREBIAS 1NPN 1PNP SOT-563
Packaging: Tape & Reel (TR)
Package / Case: SOT-563, SOT-666
Mounting Type: Surface Mount
Transistor Type: 1 NPN, 1 PNP - Pre-Biased (Dual)
Power - Max: 500mW
Current - Collector (Ic) (Max): 100mA
Voltage - Collector Emitter Breakdown (Max): 50V
Vce Saturation (Max) @ Ib, Ic: 250mV @ 300µA, 10mA
Current - Collector Cutoff (Max): 500nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 5mA, 10V
Resistor - Base (R1): 10kOhms
Resistor - Emitter Base (R2): 47kOhms
Supplier Device Package: SOT-563
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
NSBC114TPDXV6T1 NSBC114TPDXV6T1 onsemi NSBC114EPDXV6T1%2C5_Series.pdf Description: TRANS PREBIAS 1NPN 1PNP SOT-563
Packaging: Tape & Reel (TR)
Package / Case: SOT-563, SOT-666
Mounting Type: Surface Mount
Transistor Type: 1 NPN, 1 PNP - Pre-Biased (Dual)
Power - Max: 500mW
Current - Collector (Ic) (Max): 100mA
Voltage - Collector Emitter Breakdown (Max): 50V
Vce Saturation (Max) @ Ib, Ic: 250mV @ 1mA, 10mA
Current - Collector Cutoff (Max): 500nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 160 @ 5mA, 10V
Resistor - Base (R1): 10kOhms
Supplier Device Package: SOT-563
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
NSBC114TF3T5G NSBC114TF3T5G onsemi dtc114t-d.pdf Description: TRANS PREBIAS NPN 50V SOT1123
Packaging: Bulk
Package / Case: SOT-1123
Mounting Type: Surface Mount
Transistor Type: NPN - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 250mV @ 1mA, 10mA
Current - Collector Cutoff (Max): 500nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 160 @ 5mA, 10V
Supplier Device Package: SOT-1123
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 254 mW
Resistor - Base (R1): 10 kOhms
Resistors Included: R1 Only
auf Bestellung 472000 Stücke:
Lieferzeit 10-14 Tag (e)
2407+0.18 EUR
Mindestbestellmenge: 2407
Im Einkaufswagen  Stück im Wert von  UAH
NSBC114TPDXV6T1G NSBC114TPDXV6T1G onsemi dtc114yp-d.pdf Description: TRANS PREBIAS 1NPN 1PNP SOT-563
Packaging: Tape & Reel (TR)
Package / Case: SOT-563, SOT-666
Mounting Type: Surface Mount
Transistor Type: 1 NPN, 1 PNP - Pre-Biased (Dual)
Power - Max: 500mW
Current - Collector (Ic) (Max): 100mA
Voltage - Collector Emitter Breakdown (Max): 50V
Vce Saturation (Max) @ Ib, Ic: 250mV @ 1mA, 10mA
Current - Collector Cutoff (Max): 500nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 160 @ 5mA, 10V
Resistor - Base (R1): 10kOhms
Supplier Device Package: SOT-563
auf Bestellung 100000 Stücke:
Lieferzeit 10-14 Tag (e)
4000+0.11 EUR
8000+0.1 EUR
12000+0.095 EUR
20000+0.089 EUR
28000+0.085 EUR
40000+0.082 EUR
100000+0.074 EUR
Mindestbestellmenge: 4000
Im Einkaufswagen  Stück im Wert von  UAH
NSBC114TPDXV6T1G NSBC114TPDXV6T1G onsemi dtc114yp-d.pdf Description: TRANS PREBIAS 1NPN 1PNP SOT-563
Packaging: Cut Tape (CT)
Package / Case: SOT-563, SOT-666
Mounting Type: Surface Mount
Transistor Type: 1 NPN, 1 PNP - Pre-Biased (Dual)
Power - Max: 500mW
Current - Collector (Ic) (Max): 100mA
Voltage - Collector Emitter Breakdown (Max): 50V
Vce Saturation (Max) @ Ib, Ic: 250mV @ 1mA, 10mA
Current - Collector Cutoff (Max): 500nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 160 @ 5mA, 10V
Resistor - Base (R1): 10kOhms
Supplier Device Package: SOT-563
auf Bestellung 100000 Stücke:
Lieferzeit 10-14 Tag (e)
33+0.55 EUR
Mindestbestellmenge: 33
Im Einkaufswagen  Stück im Wert von  UAH
NSBC114TPDXV6T1G NSBC114TPDXV6T1G onsemi dtc114yp-d.pdf Description: TRANS PREBIAS 1NPN 1PNP SOT-563
Packaging: Bulk
Package / Case: SOT-563, SOT-666
Mounting Type: Surface Mount
Transistor Type: 1 NPN, 1 PNP - Pre-Biased (Dual)
Power - Max: 500mW
Current - Collector (Ic) (Max): 100mA
Voltage - Collector Emitter Breakdown (Max): 50V
Vce Saturation (Max) @ Ib, Ic: 250mV @ 1mA, 10mA
Current - Collector Cutoff (Max): 500nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 160 @ 5mA, 10V
Resistor - Base (R1): 10kOhms
Supplier Device Package: SOT-563
auf Bestellung 202500 Stücke:
Lieferzeit 10-14 Tag (e)
1872+0.24 EUR
Mindestbestellmenge: 1872
Im Einkaufswagen  Stück im Wert von  UAH
NSBC114EPDXV6T1 NSBC114EPDXV6T1 onsemi NSBC114EPDXV6T1%2C5_Series.pdf Description: TRANS PREBIAS 1NPN 1PNP SOT-563
Packaging: Tape & Reel (TR)
Package / Case: SOT-563, SOT-666
Mounting Type: Surface Mount
Transistor Type: 1 NPN, 1 PNP - Pre-Biased (Dual)
Power - Max: 500mW
Current - Collector (Ic) (Max): 100mA
Voltage - Collector Emitter Breakdown (Max): 50V
Vce Saturation (Max) @ Ib, Ic: 250mV @ 300µA, 10mA
Current - Collector Cutoff (Max): 500nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 35 @ 5mA, 10V
Resistor - Base (R1): 10kOhms
Resistor - Emitter Base (R2): 10kOhms
Supplier Device Package: SOT-563
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
MBRF20200CT MBRF20200CT onsemi mbrf20200ct-d.pdf Description: DIODE ARR SCHOT 200V 10A TO220FP
Packaging: Tube
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 10A
Supplier Device Package: TO-220FP
Operating Temperature - Junction: -65°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 900 mV @ 10 A
Current - Reverse Leakage @ Vr: 1 mA @ 200 V
auf Bestellung 9545 Stücke:
Lieferzeit 10-14 Tag (e)
121+3.7 EUR
Mindestbestellmenge: 121
Im Einkaufswagen  Stück im Wert von  UAH
MBRF20200CT MBRF20200CT onsemi mbrf20200ct-d.pdf Description: DIODE ARR SCHOT 200V 10A TO220FP
Packaging: Tube
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 10A
Supplier Device Package: TO-220FP
Operating Temperature - Junction: -65°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 900 mV @ 10 A
Current - Reverse Leakage @ Vr: 1 mA @ 200 V
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
TIP31A TIP31A onsemi TIP31_A_B_C%2C%20TIP32_A_B_C.pdf Description: TRANS NPN 60V 3A TO-220-3
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Transistor Type: NPN
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 1.2V @ 375mA, 3A
Current - Collector Cutoff (Max): 300µA
DC Current Gain (hFE) (Min) @ Ic, Vce: 10 @ 3A, 4V
Frequency - Transition: 3MHz
Supplier Device Package: TO-220-3
Current - Collector (Ic) (Max): 3 A
Voltage - Collector Emitter Breakdown (Max): 60 V
Power - Max: 2 W
auf Bestellung 505 Stücke:
Lieferzeit 10-14 Tag (e)
505+0.89 EUR
Mindestbestellmenge: 505
Im Einkaufswagen  Stück im Wert von  UAH
BD237 onsemi BD237-D.PDF Description: TRANS NPN 80V 2A TO-126
Packaging: Bulk
Package / Case: TO-225AA, TO-126-3
Mounting Type: Through Hole
Transistor Type: NPN
Operating Temperature: -55°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 600mV @ 100mA, 1A
Current - Collector Cutoff (Max): 100µA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 25 @ 1A, 2V
Frequency - Transition: 3MHz
Supplier Device Package: TO-126
Current - Collector (Ic) (Max): 2 A
Voltage - Collector Emitter Breakdown (Max): 80 V
Power - Max: 25 W
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
LM833D LM833D onsemi lm833.pdf?t.download=true&u=5oefqw Description: IC AUDIO 2 CIRCUIT 8SOIC
Packaging: Bulk
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Amplifier Type: Audio
Operating Temperature: -40°C ~ 85°C
Current - Supply: 2.05mA (x2 Channels)
Slew Rate: 7V/µs
Gain Bandwidth Product: 16 MHz
Current - Input Bias: 300 nA
Voltage - Input Offset: 150 µV
Supplier Device Package: 8-SOIC
Number of Circuits: 2
Current - Output / Channel: 37 mA
Voltage - Supply Span (Min): 10 V
Voltage - Supply Span (Max): 36 V
auf Bestellung 6107 Stücke:
Lieferzeit 10-14 Tag (e)
327+1.39 EUR
Mindestbestellmenge: 327
Im Einkaufswagen  Stück im Wert von  UAH
LB1830M-TLM-E LB1830M-TLM-E onsemi LB1830M.pdf Description: IC MOTOR DRIVER 3V-9V 10MFPS
Packaging: Tape & Reel (TR)
Package / Case: 10-LSOP (0.173", 4.40mm Width)
Mounting Type: Surface Mount
Function: Driver - Fully Integrated, Control and Power Stage
Current - Output: 500mA
Interface: Parallel
Operating Temperature: -20°C ~ 80°C (TA)
Output Configuration: Half Bridge (2)
Voltage - Supply: 3V ~ 9V
Applications: General Purpose
Technology: Bipolar
Voltage - Load: 3V ~ 9V
Supplier Device Package: 10-MFPS
Motor Type - AC, DC: Brushed DC
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
MM74HC273MTC MM74HC273MTC onsemi mm74hc273-d.pdf Description: IC FF D-TYPE SGL 8-BIT 20-TSSOP
Packaging: Tube
Package / Case: 20-TSSOP (0.173", 4.40mm Width)
Output Type: Non-Inverted
Mounting Type: Surface Mount
Number of Elements: 1
Function: Master Reset
Type: D-Type
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 2V ~ 6V
Current - Quiescent (Iq): 8 µA
Current - Output High, Low: 5.2mA, 5.2mA
Trigger Type: Positive Edge
Clock Frequency: 78 MHz
Input Capacitance: 7 pF
Supplier Device Package: 20-TSSOP
Max Propagation Delay @ V, Max CL: 23ns @ 6V, 50pF
Number of Bits per Element: 8
auf Bestellung 11894 Stücke:
Lieferzeit 10-14 Tag (e)
16+1.14 EUR
22+0.83 EUR
75+0.67 EUR
150+0.63 EUR
300+0.6 EUR
525+0.58 EUR
1050+0.56 EUR
2550+0.54 EUR
5025+0.52 EUR
Mindestbestellmenge: 16
Im Einkaufswagen  Stück im Wert von  UAH
MC74HC273ADWR2G-Q MC74HC273ADWR2G-Q onsemi mc74hc273a-d.pdf Description: LOG CMOS D FLIP FLOP OCTL
Packaging: Tape & Reel (TR)
Package / Case: 20-SOIC (0.295", 7.50mm Width)
Output Type: Non-Inverted
Mounting Type: Surface Mount
Number of Elements: 1
Function: Master Reset
Type: D-Type
Operating Temperature: -55°C ~ 125°C (TA)
Voltage - Supply: 2V ~ 6V
Current - Quiescent (Iq): 4 µA
Current - Output High, Low: 7.8mA, 7.8mA
Trigger Type: Positive Edge
Clock Frequency: 35 MHz
Input Capacitance: 10 pF
Supplier Device Package: 20-SOIC
Max Propagation Delay @ V, Max CL: 25ns @ 6V, 50pF
Grade: Automotive
Number of Bits per Element: 8
Qualification: AEC-Q100
auf Bestellung 90000 Stücke:
Lieferzeit 10-14 Tag (e)
1000+0.33 EUR
2000+0.32 EUR
5000+0.31 EUR
7000+0.3 EUR
25000+0.29 EUR
Mindestbestellmenge: 1000
Im Einkaufswagen  Stück im Wert von  UAH
MC74HC273ADWR2G-Q MC74HC273ADWR2G-Q onsemi mc74hc273a-d.pdf Description: LOG CMOS D FLIP FLOP OCTL
Packaging: Cut Tape (CT)
Package / Case: 20-SOIC (0.295", 7.50mm Width)
Output Type: Non-Inverted
Mounting Type: Surface Mount
Number of Elements: 1
Function: Master Reset
Type: D-Type
Operating Temperature: -55°C ~ 125°C (TA)
Voltage - Supply: 2V ~ 6V
Current - Quiescent (Iq): 4 µA
Current - Output High, Low: 7.8mA, 7.8mA
Trigger Type: Positive Edge
Clock Frequency: 35 MHz
Input Capacitance: 10 pF
Supplier Device Package: 20-SOIC
Max Propagation Delay @ V, Max CL: 25ns @ 6V, 50pF
Grade: Automotive
Number of Bits per Element: 8
Qualification: AEC-Q100
auf Bestellung 90840 Stücke:
Lieferzeit 10-14 Tag (e)
25+0.72 EUR
35+0.51 EUR
39+0.45 EUR
100+0.39 EUR
250+0.36 EUR
500+0.35 EUR
Mindestbestellmenge: 25
Im Einkaufswagen  Stück im Wert von  UAH
NCD57081ADR2G NCD57081ADR2G onsemi ncd57080-d.pdf Description: ISOLATED DRIVER IN A COMPACT 8-P
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Current - Peak Output: 6.5A
Technology: Capacitive Coupling
Current - Output High, Low: 6.5A, 6.5A
Voltage - Isolation: 3750Vrms
Approval Agency: UL, VDE
Supplier Device Package: 8-SOIC
Rise / Fall Time (Typ): 13ns, 13ns
Common Mode Transient Immunity (Min): 100kV/µs
Propagation Delay tpLH / tpHL (Max): 90ns, 90ns
Pulse Width Distortion (Max): 25ns
Number of Channels: 1
Voltage - Output Supply: 0V ~ 32V
auf Bestellung 12500 Stücke:
Lieferzeit 10-14 Tag (e)
2500+2.59 EUR
5000+2.54 EUR
Mindestbestellmenge: 2500
Im Einkaufswagen  Stück im Wert von  UAH
NCD57081ADR2G NCD57081ADR2G onsemi ncd57080-d.pdf Description: ISOLATED DRIVER IN A COMPACT 8-P
Packaging: Cut Tape (CT)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Current - Peak Output: 6.5A
Technology: Capacitive Coupling
Current - Output High, Low: 6.5A, 6.5A
Voltage - Isolation: 3750Vrms
Approval Agency: UL, VDE
Supplier Device Package: 8-SOIC
Rise / Fall Time (Typ): 13ns, 13ns
Common Mode Transient Immunity (Min): 100kV/µs
Propagation Delay tpLH / tpHL (Max): 90ns, 90ns
Pulse Width Distortion (Max): 25ns
Number of Channels: 1
Voltage - Output Supply: 0V ~ 32V
auf Bestellung 14134 Stücke:
Lieferzeit 10-14 Tag (e)
4+4.86 EUR
10+3.64 EUR
25+3.33 EUR
100+3 EUR
250+2.84 EUR
500+2.75 EUR
1000+2.67 EUR
Mindestbestellmenge: 4
Im Einkaufswagen  Stück im Wert von  UAH
MBR10100 MBR10100 onsemi mbr1080-d.pdf Description: DIODE SCHOTTKY 100V 10A TO2202
Packaging: Tube
Package / Case: TO-220-2
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 10A
Supplier Device Package: TO-220-2
Operating Temperature - Junction: -65°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 800 mV @ 10 A
Current - Reverse Leakage @ Vr: 100 µA @ 100 V
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
TIP42CTU-T TIP42CTU-T onsemi TIP42_TIP42C_Rev2_Nov2017.PDF Description: TRANS PNP 100V 6A TO-220-3
Packaging: Bulk
Package / Case: TO-220-3
Mounting Type: Through Hole
Transistor Type: PNP
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 1.5V @ 600mA, 6A
Current - Collector Cutoff (Max): 700µA
DC Current Gain (hFE) (Min) @ Ic, Vce: 15 @ 3A, 4V
Frequency - Transition: 3MHz
Supplier Device Package: TO-220-3
Current - Collector (Ic) (Max): 6 A
Voltage - Collector Emitter Breakdown (Max): 100 V
Power - Max: 2 W
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
NVMFWS4D0N04XMT1G NVMFWS4D0N04XMT1G onsemi nvmfws4d0n04xm-d.pdf Description: SINGLE N-CHANNEL POWER MOSFET 40
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN, 5 Leads
Mounting Type: Surface Mount, Wettable Flank
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 80A (Tc)
Rds On (Max) @ Id, Vgs: 3.9mOhm @ 6A, 10V
Power Dissipation (Max): 43W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 30µA
Supplier Device Package: 5-DFNW (4.9x5.9) (8-SOFL-WF)
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 12 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 784 pF @ 25 V
Qualification: AEC-Q101
auf Bestellung 66000 Stücke:
Lieferzeit 10-14 Tag (e)
1500+0.64 EUR
3000+0.62 EUR
4500+0.61 EUR
7500+0.6 EUR
15000+0.59 EUR
Mindestbestellmenge: 1500
Im Einkaufswagen  Stück im Wert von  UAH
NVMFWS4D0N04XMT1G NVMFWS4D0N04XMT1G onsemi nvmfws4d0n04xm-d.pdf Description: SINGLE N-CHANNEL POWER MOSFET 40
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN, 5 Leads
Mounting Type: Surface Mount, Wettable Flank
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 80A (Tc)
Rds On (Max) @ Id, Vgs: 3.9mOhm @ 6A, 10V
Power Dissipation (Max): 43W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 30µA
Supplier Device Package: 5-DFNW (4.9x5.9) (8-SOFL-WF)
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 12 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 784 pF @ 25 V
Qualification: AEC-Q101
auf Bestellung 67456 Stücke:
Lieferzeit 10-14 Tag (e)
14+1.32 EUR
19+0.95 EUR
25+0.86 EUR
100+0.76 EUR
250+0.71 EUR
500+0.68 EUR
Mindestbestellmenge: 14
Im Einkaufswagen  Stück im Wert von  UAH
NVMFS4841NT1G NVMFS4841NT1G onsemi nvmfs4841n-d.pdf Description: MOSFET N-CH 30V 16A 5DFN
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN, 5 Leads
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 16A (Ta)
Rds On (Max) @ Id, Vgs: 7mOhm @ 30A, 10V
Power Dissipation (Max): 3.7W (Ta), 112W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: 5-DFN (5x6) (8-SOFL)
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 17 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 1436 pF @ 12 V
Qualification: AEC-Q101
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
ES1J ES1J onsemi ES1J-D.PDF Description: DIODE STANDARD 600V 1A DO214AC
Packaging: Tape & Reel (TR)
Package / Case: DO-214AC, SMA
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 35 ns
Technology: Standard
Capacitance @ Vr, F: 8pF @ 0V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: DO-214AC (SMA)
Operating Temperature - Junction: 150°C (Max)
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 1 A
Current - Reverse Leakage @ Vr: 5 µA @ 600 V
auf Bestellung 275500 Stücke:
Lieferzeit 10-14 Tag (e)
7500+0.12 EUR
Mindestbestellmenge: 7500
Im Einkaufswagen  Stück im Wert von  UAH
ES1J ES1J onsemi ES1J-D.PDF Description: DIODE STANDARD 600V 1A DO214AC
Packaging: Cut Tape (CT)
Package / Case: DO-214AC, SMA
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 35 ns
Technology: Standard
Capacitance @ Vr, F: 8pF @ 0V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: DO-214AC (SMA)
Operating Temperature - Junction: 150°C (Max)
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 1 A
Current - Reverse Leakage @ Vr: 5 µA @ 600 V
auf Bestellung 275777 Stücke:
Lieferzeit 10-14 Tag (e)
35+0.51 EUR
51+0.35 EUR
100+0.28 EUR
500+0.21 EUR
1000+0.18 EUR
2000+0.17 EUR
Mindestbestellmenge: 35
Im Einkaufswagen  Stück im Wert von  UAH
PN2907BU PN2907BU onsemi pn2907-d.pdf Description: TRANS PNP 40V 0.8A TO-92-3
Packaging: Bulk
Package / Case: TO-226-3, TO-92-3 (TO-226AA)
Mounting Type: Through Hole
Transistor Type: PNP
Operating Temperature: -55°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 1.6V @ 50mA, 500mA
Current - Collector Cutoff (Max): 20nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 150mA, 10V
Supplier Device Package: TO-92-3
Current - Collector (Ic) (Max): 800 mA
Voltage - Collector Emitter Breakdown (Max): 40 V
Power - Max: 625 mW
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
LC75836WS-T-E LC75836WS-T-E onsemi Description: IC DRVR 140 SEGMENT 48SQFP
Packaging: Tray
Package / Case: 48-LQFP
Display Type: LCD
Mounting Type: Surface Mount
Interface: Serial
Configuration: 140 Segment
Operating Temperature: -40°C ~ 85°C
Voltage - Supply: 4.5V ~ 6V
Supplier Device Package: 48-SQFP (7x7)
Current - Supply: 450 µA
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
1.5KE30A 1.5KE30A onsemi 1N6267A_Series.pdf Description: TVS DIODE 25.6VWM 41.4VC AXIAL
Packaging: Bulk
Package / Case: DO-201AD, Axial
Mounting Type: Through Hole
Type: Zener
Operating Temperature: -65°C ~ 175°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 36A
Voltage - Reverse Standoff (Typ): 25.6V
Supplier Device Package: Axial
Unidirectional Channels: 1
Voltage - Breakdown (Min): 28.5V
Voltage - Clamping (Max) @ Ipp: 41.4V
Power - Peak Pulse: 1500W (1.5kW)
Power Line Protection: No
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
NL17SZ17DBVT1G NL17SZ17DBVT1G onsemi nl17sz17-d.pdf Description: IC BUFFER NON-INVERT 5.5V SC-74A
Packaging: Tape & Reel (TR)
Package / Case: SC-74A, SOT-753
Output Type: Push-Pull
Mounting Type: Surface Mount
Number of Elements: 1
Logic Type: Buffer, Non-Inverting
Operating Temperature: -55°C ~ 125°C (TA)
Voltage - Supply: 1.65V ~ 5.5V
Input Type: Schmitt Trigger
Number of Bits per Element: 1
Current - Output High, Low: 32mA, 32mA
Supplier Device Package: SC-74A
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
NL17SZ17DBVT1G NL17SZ17DBVT1G onsemi nl17sz17-d.pdf Description: IC BUFFER NON-INVERT 5.5V SC-74A
Packaging: Cut Tape (CT)
Package / Case: SC-74A, SOT-753
Output Type: Push-Pull
Mounting Type: Surface Mount
Number of Elements: 1
Logic Type: Buffer, Non-Inverting
Operating Temperature: -55°C ~ 125°C (TA)
Voltage - Supply: 1.65V ~ 5.5V
Input Type: Schmitt Trigger
Number of Bits per Element: 1
Current - Output High, Low: 32mA, 32mA
Supplier Device Package: SC-74A
auf Bestellung 1436 Stücke:
Lieferzeit 10-14 Tag (e)
125+0.14 EUR
244+0.072 EUR
285+0.062 EUR
339+0.052 EUR
375+0.047 EUR
500+0.044 EUR
1000+0.042 EUR
Mindestbestellmenge: 125
Im Einkaufswagen  Stück im Wert von  UAH
AF0130CSSM30SMD20 AF0130CSSM30SMD20 onsemi af0130-pd-d.pdf Description: 1 MP 1/3 CIS
Packaging: Bulk
Package / Case: Die
Type: CMOS
Operating Temperature: -30°C ~ 85°C
Voltage - Supply: 1.2V ~ 2.8V
Pixel Size: 3.5µm x 3.5µm
Active Pixel Array: 1280H x 960V
Supplier Device Package: Die
Frames per Second: 60.0
auf Bestellung 1840 Stücke:
Lieferzeit 10-14 Tag (e)
1+91.87 EUR
5+84.89 EUR
10+82.29 EUR
25+79.19 EUR
50+77.06 EUR
100+75.11 EUR
Im Einkaufswagen  Stück im Wert von  UAH
AF0131CSSM30SMKA1-CR2 AF0131CSSM30SMKA1-CR2 onsemi af0130-pd-d.pdf Description: 1MP 1/3 CIS SO
Packaging: Tray
Package / Case: 87-WFBGA, CSPBGA
Type: CMOS
Operating Temperature: -30°C ~ 85°C
Voltage - Supply: 1.2V ~ 2.8V
Pixel Size: 3.5µm x 3.5µm
Active Pixel Array: 1280H x 960V
Supplier Device Package: 87-ODCSP (6.05x4.83)
Frames per Second: 110.0
auf Bestellung 250 Stücke:
Lieferzeit 10-14 Tag (e)
1+119.43 EUR
5+110.67 EUR
10+107.4 EUR
25+103.5 EUR
50+100.82 EUR
100+98.37 EUR
Im Einkaufswagen  Stück im Wert von  UAH
AF0131CSSM30SMKA1-CP2 AF0131CSSM30SMKA1-CP2 onsemi af0130-pd-d.pdf Description: 1MP 1/3 CIS SO
Packaging: Tray
Package / Case: 87-WFBGA, CSPBGA
Type: CMOS
Operating Temperature: -30°C ~ 85°C
Voltage - Supply: 1.2V ~ 2.8V
Pixel Size: 3.5µm x 3.5µm
Active Pixel Array: 1280H x 960V
Supplier Device Package: 87-ODCSP (6.05x4.83)
Frames per Second: 110.0
auf Bestellung 2950 Stücke:
Lieferzeit 10-14 Tag (e)
1+120.33 EUR
5+111.5 EUR
10+108.22 EUR
25+104.29 EUR
50+101.6 EUR
100+99.13 EUR
Im Einkaufswagen  Stück im Wert von  UAH
AF0130CSSM30SMKA1-CR2 AF0130CSSM30SMKA1-CR2 onsemi af0130-pd-d.pdf Description: 1MP 1/3 CIS SO
Packaging: Tray
Package / Case: 87-WFBGA, CSPBGA
Type: CMOS
Operating Temperature: -30°C ~ 85°C
Voltage - Supply: 1.2V ~ 2.8V
Pixel Size: 3.5µm x 3.5µm
Active Pixel Array: 1280H x 960V
Supplier Device Package: 87-ODCSP (6.05x4.83)
Frames per Second: 110.0
auf Bestellung 199 Stücke:
Lieferzeit 10-14 Tag (e)
1+120.56 EUR
5+111.72 EUR
10+108.43 EUR
25+104.5 EUR
50+101.8 EUR
100+99.33 EUR
Im Einkaufswagen  Stück im Wert von  UAH
AF0130CSSM30SMKA1-CP2 AF0130CSSM30SMKA1-CP2 onsemi af0130-pd-d.pdf Description: 1MP 1/3 CIS SO
Packaging: Tray
Package / Case: 87-WFBGA, CSPBGA
Type: CMOS
Operating Temperature: -30°C ~ 85°C
Voltage - Supply: 1.2V ~ 2.8V
Pixel Size: 3.5µm x 3.5µm
Active Pixel Array: 1280H x 960V
Supplier Device Package: 87-ODCSP (6.05x4.83)
Frames per Second: 110.0
auf Bestellung 2850 Stücke:
Lieferzeit 10-14 Tag (e)
1+121.21 EUR
5+112.34 EUR
10+109.04 EUR
25+105.08 EUR
50+102.37 EUR
100+99.88 EUR
Im Einkaufswagen  Stück im Wert von  UAH
MMBZ5239BLT3 MMBZ5239BLT3 onsemi mmbz5221blt1-d.pdf Description: DIODE ZENER 9.1V 225MW SOT23-3
Packaging: Bulk
Tolerance: ±5%
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C
Voltage - Zener (Nom) (Vz): 9.1 V
Impedance (Max) (Zzt): 10 Ohms
Supplier Device Package: SOT-23-3 (TO-236)
Power - Max: 225 mW
Voltage - Forward (Vf) (Max) @ If: 900 mV @ 10 mA
Current - Reverse Leakage @ Vr: 3 µA @ 7 V
auf Bestellung 40000 Stücke:
Lieferzeit 10-14 Tag (e)
7869+0.06 EUR
Mindestbestellmenge: 7869
Im Einkaufswagen  Stück im Wert von  UAH
MMBZ5239B MMBZ5239B onsemi FAIR-S-A0002364146-1.pdf?t.download=true&u=5oefqw Description: DIODE ZENER 9.1V 300MW SOT23
Packaging: Bulk
Tolerance: ±5%
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Voltage - Zener (Nom) (Vz): 9.1 V
Impedance (Max) (Zzt): 10 Ohms
Supplier Device Package: SOT-23
Power - Max: 300 mW
Voltage - Forward (Vf) (Max) @ If: 900 mV @ 10 mA
Current - Reverse Leakage @ Vr: 3 µA @ 7 V
auf Bestellung 39000 Stücke:
Lieferzeit 10-14 Tag (e)
7869+0.06 EUR
Mindestbestellmenge: 7869
Im Einkaufswagen  Stück im Wert von  UAH
MMBZ5239B MMBZ5239B onsemi MMBZ5221B-5257B.pdf Description: DIODE ZENER 9.1V 350MW SOT23-3
Packaging: Tape & Reel (TR)
Tolerance: ±5%
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C
Voltage - Zener (Nom) (Vz): 9.1 V
Impedance (Max) (Zzt): 10 Ohms
Supplier Device Package: SOT-23-3
Power - Max: 350 mW
Voltage - Forward (Vf) (Max) @ If: 900 mV @ 10 mA
Current - Reverse Leakage @ Vr: 3 µA @ 7 V
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
CAT24C08WI-G CAT24C08WI-G onsemi cat24c01-d.pdf Description: IC EEPROM 8KBIT I2C 400KHZ 8SOIC
Packaging: Tube
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Memory Size: 8Kbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 1.7V ~ 5.5V
Technology: EEPROM
Clock Frequency: 400 kHz
Memory Format: EEPROM
Supplier Device Package: 8-SOIC
Write Cycle Time - Word, Page: 5ms
Memory Interface: I2C
Access Time: 900 ns
Memory Organization: 1K x 8
DigiKey Programmable: Verified
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
KBU8M KBU8M onsemi KBU8A-KBU8M_Rev2010_DS.pdf Description: BRIDGE RECT 1PHASE 1KV 8A KBU
Packaging: Bulk
Package / Case: 4-SIP, KBU
Mounting Type: Through Hole
Diode Type: Single Phase
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: KBU
Voltage - Peak Reverse (Max): 1 kV
Current - Average Rectified (Io): 8 A
Voltage - Forward (Vf) (Max) @ If: 1 V @ 8 A
Current - Reverse Leakage @ Vr: 10 µA @ 1000 V
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
FQA17N40 FQA17N40 onsemi FQA17N40.pdf Description: MOSFET N-CH 400V 17.2A TO3P
Packaging: Tube
Package / Case: TO-3P-3, SC-65-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 17.2A (Tc)
Rds On (Max) @ Id, Vgs: 270mOhm @ 8.6A, 10V
Power Dissipation (Max): 190W (Tc)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: TO-3P
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 400 V
Gate Charge (Qg) (Max) @ Vgs: 60 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2300 pF @ 25 V
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
ES3D ES3D onsemi ES3J-D.PDF Description: DIODE STANDARD 200V 3A DO214AB
Packaging: Tape & Reel (TR)
Package / Case: DO-214AB, SMC
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 20 ns
Technology: Standard
Capacitance @ Vr, F: 45pF @ 4V, 1MHz
Current - Average Rectified (Io): 3A
Supplier Device Package: DO-214AB (SMC)
Operating Temperature - Junction: -50°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 950 mV @ 3 A
Current - Reverse Leakage @ Vr: 10 µA @ 200 V
auf Bestellung 39000 Stücke:
Lieferzeit 10-14 Tag (e)
3000+0.26 EUR
9000+0.25 EUR
21000+0.23 EUR
Mindestbestellmenge: 3000
Im Einkaufswagen  Stück im Wert von  UAH
ES3D ES3D onsemi ES3J-D.PDF Description: DIODE STANDARD 200V 3A DO214AB
Packaging: Cut Tape (CT)
Package / Case: DO-214AB, SMC
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 20 ns
Technology: Standard
Capacitance @ Vr, F: 45pF @ 4V, 1MHz
Current - Average Rectified (Io): 3A
Supplier Device Package: DO-214AB (SMC)
Operating Temperature - Junction: -50°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 950 mV @ 3 A
Current - Reverse Leakage @ Vr: 10 µA @ 200 V
auf Bestellung 41448 Stücke:
Lieferzeit 10-14 Tag (e)
19+0.97 EUR
29+0.61 EUR
100+0.49 EUR
500+0.38 EUR
1000+0.34 EUR
Mindestbestellmenge: 19
Im Einkaufswagen  Stück im Wert von  UAH
NSVBAS70LT1G NSVBAS70LT1G onsemi bas70lt1-d.pdf Description: DIODE SCHOTTKY 70V 70MA SOT233
Packaging: Bulk
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Speed: Small Signal =< 200mA (Io), Any Speed
Technology: Schottky
Capacitance @ Vr, F: 2pF @ 0V, 1MHz
Current - Average Rectified (Io): 70mA
Supplier Device Package: SOT-23-3 (TO-236)
Operating Temperature - Junction: -55°C ~ 150°C
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 70 V
Voltage - Forward (Vf) (Max) @ If: 1 V @ 15 mA
Current - Reverse Leakage @ Vr: 10 µA @ 70 V
Qualification: AEC-Q101
auf Bestellung 6500 Stücke:
Lieferzeit 10-14 Tag (e)
2141+0.21 EUR
Mindestbestellmenge: 2141
Im Einkaufswagen  Stück im Wert von  UAH
NSVMUN5333DW1T3G dtc143zp-d.pdf
NSVMUN5333DW1T3G
Hersteller: onsemi
Description: TRANS PREBIAS 1NPN 1PNP SOT-363
Packaging: Cut Tape (CT)
Package / Case: 6-TSSOP, SC-88, SOT-363
Mounting Type: Surface Mount
Transistor Type: 1 NPN, 1 PNP - Pre-Biased (Dual)
Power - Max: 250mW
Current - Collector (Ic) (Max): 100mA
Voltage - Collector Emitter Breakdown (Max): 50V
Vce Saturation (Max) @ Ib, Ic: 250mV @ 1mA, 10mA
Current - Collector Cutoff (Max): 500nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 5mA, 10V
Resistor - Base (R1): 4.7kOhms
Resistor - Emitter Base (R2): 47kOhms
Supplier Device Package: SC-88/SC70-6/SOT-363
Grade: Automotive
Qualification: AEC-Q101
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
SMUN5330DW1T1G dtc113ep-d.pdf
SMUN5330DW1T1G
Hersteller: onsemi
Description: TRANS PREBIAS 1NPN 1PNP SOT-363
Packaging: Tape & Reel (TR)
Package / Case: 6-TSSOP, SC-88, SOT-363
Mounting Type: Surface Mount
Transistor Type: 1 NPN, 1 PNP - Pre-Biased (Dual)
Power - Max: 187mW
Current - Collector (Ic) (Max): 100mA
Voltage - Collector Emitter Breakdown (Max): 50V
Vce Saturation (Max) @ Ib, Ic: 250mV @ 5mA, 10mA
Current - Collector Cutoff (Max): 500nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 3 @ 5mA, 10V
Resistor - Base (R1): 1kOhms
Resistor - Emitter Base (R2): 1kOhms
Supplier Device Package: SC-88/SC70-6/SOT-363
Grade: Automotive
Qualification: AEC-Q101
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
SMUN5330DW1T1G dtc113ep-d.pdf
SMUN5330DW1T1G
Hersteller: onsemi
Description: TRANS PREBIAS 1NPN 1PNP SOT-363
Packaging: Cut Tape (CT)
Package / Case: 6-TSSOP, SC-88, SOT-363
Mounting Type: Surface Mount
Transistor Type: 1 NPN, 1 PNP - Pre-Biased (Dual)
Power - Max: 187mW
Current - Collector (Ic) (Max): 100mA
Voltage - Collector Emitter Breakdown (Max): 50V
Vce Saturation (Max) @ Ib, Ic: 250mV @ 5mA, 10mA
Current - Collector Cutoff (Max): 500nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 3 @ 5mA, 10V
Resistor - Base (R1): 1kOhms
Resistor - Emitter Base (R2): 1kOhms
Supplier Device Package: SC-88/SC70-6/SOT-363
Grade: Automotive
Qualification: AEC-Q101
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
NSVMUN5332DW1T3G dtc143ep-d.pdf
NSVMUN5332DW1T3G
Hersteller: onsemi
Description: TRANS PREBIAS 1NPN 1PNP SOT-363
Packaging: Tape & Reel (TR)
Package / Case: 6-TSSOP, SC-88, SOT-363
Mounting Type: Surface Mount
Transistor Type: 1 NPN, 1 PNP - Pre-Biased (Dual)
Power - Max: 385mW
Current - Collector (Ic) (Max): 100mA
Voltage - Collector Emitter Breakdown (Max): 50V
Vce Saturation (Max) @ Ib, Ic: 250mV @ 1mA, 10mA
Current - Collector Cutoff (Max): 500nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 15 @ 5mA, 10V
Resistor - Base (R1): 4.7kOhms
Resistor - Emitter Base (R2): 4.7kOhms
Supplier Device Package: SC-88/SC70-6/SOT-363
Grade: Automotive
Qualification: AEC-Q101
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
NSVMUN5332DW1T3G dtc143ep-d.pdf
NSVMUN5332DW1T3G
Hersteller: onsemi
Description: TRANS PREBIAS 1NPN 1PNP SOT-363
Packaging: Cut Tape (CT)
Package / Case: 6-TSSOP, SC-88, SOT-363
Mounting Type: Surface Mount
Transistor Type: 1 NPN, 1 PNP - Pre-Biased (Dual)
Power - Max: 385mW
Current - Collector (Ic) (Max): 100mA
Voltage - Collector Emitter Breakdown (Max): 50V
Vce Saturation (Max) @ Ib, Ic: 250mV @ 1mA, 10mA
Current - Collector Cutoff (Max): 500nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 15 @ 5mA, 10V
Resistor - Base (R1): 4.7kOhms
Resistor - Emitter Base (R2): 4.7kOhms
Supplier Device Package: SC-88/SC70-6/SOT-363
Grade: Automotive
Qualification: AEC-Q101
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
SB360 SB380-D.pdf
SB360
Hersteller: onsemi
Description: DIODE SCHOTTKY 60V 3A DO201AD
Packaging: Tape & Reel (TR)
Package / Case: DO-201AD, Axial
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Capacitance @ Vr, F: 180pF @ 4V, 1MHz
Current - Average Rectified (Io): 3A
Supplier Device Package: DO-201AD
Operating Temperature - Junction: -65°C ~ 125°C
Voltage - DC Reverse (Vr) (Max): 60 V
Voltage - Forward (Vf) (Max) @ If: 740 mV @ 3 A
Current - Reverse Leakage @ Vr: 500 µA @ 60 V
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
NSBC114EMXWTBG NSBCMXW-D.PDF
NSBC114EMXWTBG
Hersteller: onsemi
Description: BIAS RESISTOR TRANSISTORS (BRT)
Packaging: Bulk
Package / Case: 3-XFDFN
Mounting Type: Surface Mount, Wettable Flank
Transistor Type: NPN - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 250mV @ 300µA, 10mA
Current - Collector Cutoff (Max): 500nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 35 @ 5mA, 10V
Supplier Device Package: 3-XDFNW (1x1)
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 450 mW
Resistor - Base (R1): 10 kOhms
Resistor - Emitter Base (R2): 10 kOhms
Resistors Included: R1 and R2
auf Bestellung 96000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
53+0.33 EUR
79+0.22 EUR
89+0.2 EUR
104+0.17 EUR
250+0.16 EUR
500+0.15 EUR
1000+0.14 EUR
2500+0.13 EUR
Mindestbestellmenge: 53
Im Einkaufswagen  Stück im Wert von  UAH
NSVBC114EMXWTBG NSBCMXW-D.PDF
NSVBC114EMXWTBG
Hersteller: onsemi
Description: BIAS RESISTOR TRANSISTORS (BRT)
Packaging: Bulk
Package / Case: 3-XFDFN
Mounting Type: Surface Mount, Wettable Flank
Transistor Type: NPN - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 250mV @ 300µA, 10mA
Current - Collector Cutoff (Max): 500nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 35 @ 5mA, 10V
Supplier Device Package: 3-XDFNW (1x1)
Grade: Automotive
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 450 mW
Resistor - Base (R1): 10 kOhms
Resistor - Emitter Base (R2): 10 kOhms
Qualification: AEC-Q101
Resistors Included: R1 and R2
auf Bestellung 84000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
22+0.81 EUR
36+0.49 EUR
100+0.31 EUR
500+0.24 EUR
1000+0.21 EUR
2000+0.19 EUR
5000+0.17 EUR
10000+0.15 EUR
50000+0.13 EUR
Mindestbestellmenge: 22
Im Einkaufswagen  Stück im Wert von  UAH
NSVBC114EPDXV6T1G dtc114ep-d.pdf
NSVBC114EPDXV6T1G
Hersteller: onsemi
Description: TRANS PREBIAS 1NPN 1PNP SOT-563
Packaging: Tape & Reel (TR)
Package / Case: SOT-563, SOT-666
Mounting Type: Surface Mount
Transistor Type: 1 NPN, 1 PNP - Pre-Biased (Dual)
Power - Max: 500mW
Current - Collector (Ic) (Max): 100mA
Voltage - Collector Emitter Breakdown (Max): 50V
Vce Saturation (Max) @ Ib, Ic: 250mV @ 300µA, 10mA
Current - Collector Cutoff (Max): 500nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 35 @ 5mA, 10V
Resistor - Base (R1): 10kOhms
Resistor - Emitter Base (R2): 10kOhms
Supplier Device Package: SOT-563
Grade: Automotive
Qualification: AEC-Q101
auf Bestellung 100000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
4000+0.12 EUR
8000+0.11 EUR
12000+0.1 EUR
20000+0.097 EUR
28000+0.094 EUR
40000+0.09 EUR
100000+0.082 EUR
Mindestbestellmenge: 4000
Im Einkaufswagen  Stück im Wert von  UAH
NSVBC114EPDXV6T1G dtc114ep-d.pdf
NSVBC114EPDXV6T1G
Hersteller: onsemi
Description: TRANS PREBIAS 1NPN 1PNP SOT-563
Packaging: Cut Tape (CT)
Package / Case: SOT-563, SOT-666
Mounting Type: Surface Mount
Transistor Type: 1 NPN, 1 PNP - Pre-Biased (Dual)
Power - Max: 500mW
Current - Collector (Ic) (Max): 100mA
Voltage - Collector Emitter Breakdown (Max): 50V
Vce Saturation (Max) @ Ib, Ic: 250mV @ 300µA, 10mA
Current - Collector Cutoff (Max): 500nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 35 @ 5mA, 10V
Resistor - Base (R1): 10kOhms
Resistor - Emitter Base (R2): 10kOhms
Supplier Device Package: SOT-563
Grade: Automotive
Qualification: AEC-Q101
auf Bestellung 103540 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
30+0.6 EUR
49+0.36 EUR
100+0.23 EUR
500+0.17 EUR
1000+0.15 EUR
2000+0.13 EUR
Mindestbestellmenge: 30
Im Einkaufswagen  Stück im Wert von  UAH
NSVBC114TDXV6T1G dtc114td-d.pdf
NSVBC114TDXV6T1G
Hersteller: onsemi
Description: TRANS PREBIAS 2NPN 50V SOT-563
Packaging: Tape & Reel (TR)
Package / Case: SOT-563, SOT-666
Mounting Type: Surface Mount
Transistor Type: 2 NPN - Pre-Biased
Power - Max: 357mW
Current - Collector (Ic) (Max): 100mA
Voltage - Collector Emitter Breakdown (Max): 50V
Vce Saturation (Max) @ Ib, Ic: 250mV @ 300µA, 10mA
Current - Collector Cutoff (Max): 500nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 160 @ 5mA, 10V
Resistor - Base (R1): 10kOhms
Supplier Device Package: SOT-563
Grade: Automotive
Qualification: AEC-Q101
auf Bestellung 4000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
4000+0.17 EUR
Mindestbestellmenge: 4000
Im Einkaufswagen  Stück im Wert von  UAH
NSVBC114TDXV6T1G dtc114td-d.pdf
NSVBC114TDXV6T1G
Hersteller: onsemi
Description: TRANS PREBIAS 2NPN 50V SOT-563
Packaging: Cut Tape (CT)
Package / Case: SOT-563, SOT-666
Mounting Type: Surface Mount
Transistor Type: 2 NPN - Pre-Biased
Power - Max: 357mW
Current - Collector (Ic) (Max): 100mA
Voltage - Collector Emitter Breakdown (Max): 50V
Vce Saturation (Max) @ Ib, Ic: 250mV @ 300µA, 10mA
Current - Collector Cutoff (Max): 500nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 160 @ 5mA, 10V
Resistor - Base (R1): 10kOhms
Supplier Device Package: SOT-563
Grade: Automotive
Qualification: AEC-Q101
auf Bestellung 4000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
23+0.79 EUR
37+0.49 EUR
100+0.31 EUR
500+0.23 EUR
1000+0.21 EUR
2000+0.19 EUR
Mindestbestellmenge: 23
Im Einkaufswagen  Stück im Wert von  UAH
NSVBC114YPDXV65G DTC114YP-D.PDF
NSVBC114YPDXV65G
Hersteller: onsemi
Description: TRANS PREBIAS 1NPN 1PNP SOT-563
Packaging: Bulk
Package / Case: SOT-563, SOT-666
Mounting Type: Surface Mount
Transistor Type: 1 NPN, 1 PNP - Pre-Biased (Dual)
Power - Max: 500mW
Current - Collector (Ic) (Max): 100mA
Voltage - Collector Emitter Breakdown (Max): 50V
Vce Saturation (Max) @ Ib, Ic: 250mV @ 300µA, 10mA
Current - Collector Cutoff (Max): 500nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 5mA, 10V
Resistor - Base (R1): 10kOhms
Resistor - Emitter Base (R2): 47kOhms
Supplier Device Package: SOT-563
Grade: Automotive
Qualification: AEC-Q101
auf Bestellung 48000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
4537+0.1 EUR
Mindestbestellmenge: 4537
Im Einkaufswagen  Stück im Wert von  UAH
NSBC114TDXV6T5G dtc114td-d.pdf
NSBC114TDXV6T5G
Hersteller: onsemi
Description: TRANS PREBIAS 2NPN 50V SOT-563
Packaging: Bulk
Package / Case: SOT-563, SOT-666
Mounting Type: Surface Mount
Transistor Type: 2 NPN - Pre-Biased (Dual)
Power - Max: 500mW
Current - Collector (Ic) (Max): 100mA
Voltage - Collector Emitter Breakdown (Max): 50V
Vce Saturation (Max) @ Ib, Ic: 250mV @ 1mA, 10mA
Current - Collector Cutoff (Max): 500nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 160 @ 5mA, 10V
Resistor - Base (R1): 10kOhms
Supplier Device Package: SOT-563
auf Bestellung 40000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
3692+0.12 EUR
Mindestbestellmenge: 3692
Im Einkaufswagen  Stück im Wert von  UAH
NSBC114YDXV6T5G dtc114yd-d.pdf
NSBC114YDXV6T5G
Hersteller: onsemi
Description: TRANS PREBIAS 2NPN 50V SOT-563
Packaging: Bulk
Package / Case: SOT-563, SOT-666
Mounting Type: Surface Mount
Transistor Type: 2 NPN - Pre-Biased (Dual)
Power - Max: 500mW
Current - Collector (Ic) (Max): 100mA
Voltage - Collector Emitter Breakdown (Max): 50V
Vce Saturation (Max) @ Ib, Ic: 250mV @ 300µA, 10mA
Current - Collector Cutoff (Max): 500nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 5mA, 10V
Resistor - Base (R1): 10kOhms
Resistor - Emitter Base (R2): 47kOhms
Supplier Device Package: SOT-563
auf Bestellung 39761 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
3692+0.12 EUR
Mindestbestellmenge: 3692
Im Einkaufswagen  Stück im Wert von  UAH
NSBC114YPDXV6T5G dtc114yp-d.pdf
NSBC114YPDXV6T5G
Hersteller: onsemi
Description: TRANS PREBIAS 1NPN 1PNP SOT-563
Packaging: Bulk
Package / Case: SOT-563, SOT-666
Mounting Type: Surface Mount
Transistor Type: 1 NPN, 1 PNP - Pre-Biased (Dual)
Power - Max: 500mW
Current - Collector (Ic) (Max): 100mA
Voltage - Collector Emitter Breakdown (Max): 50V
Vce Saturation (Max) @ Ib, Ic: 250mV @ 300µA, 10mA
Current - Collector Cutoff (Max): 500nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 5mA, 10V
Resistor - Base (R1): 10kOhms
Resistor - Emitter Base (R2): 47kOhms
Supplier Device Package: SOT-563
auf Bestellung 29000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
3692+0.12 EUR
Mindestbestellmenge: 3692
Im Einkaufswagen  Stück im Wert von  UAH
NSBC114YPDXV6T1 NSBC114EPDXV6T1%2C5_Series.pdf
NSBC114YPDXV6T1
Hersteller: onsemi
Description: TRANS PREBIAS 1NPN 1PNP SOT-563
Packaging: Tape & Reel (TR)
Package / Case: SOT-563, SOT-666
Mounting Type: Surface Mount
Transistor Type: 1 NPN, 1 PNP - Pre-Biased (Dual)
Power - Max: 500mW
Current - Collector (Ic) (Max): 100mA
Voltage - Collector Emitter Breakdown (Max): 50V
Vce Saturation (Max) @ Ib, Ic: 250mV @ 300µA, 10mA
Current - Collector Cutoff (Max): 500nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 5mA, 10V
Resistor - Base (R1): 10kOhms
Resistor - Emitter Base (R2): 47kOhms
Supplier Device Package: SOT-563
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
NSBC114TPDXV6T1 NSBC114EPDXV6T1%2C5_Series.pdf
NSBC114TPDXV6T1
Hersteller: onsemi
Description: TRANS PREBIAS 1NPN 1PNP SOT-563
Packaging: Tape & Reel (TR)
Package / Case: SOT-563, SOT-666
Mounting Type: Surface Mount
Transistor Type: 1 NPN, 1 PNP - Pre-Biased (Dual)
Power - Max: 500mW
Current - Collector (Ic) (Max): 100mA
Voltage - Collector Emitter Breakdown (Max): 50V
Vce Saturation (Max) @ Ib, Ic: 250mV @ 1mA, 10mA
Current - Collector Cutoff (Max): 500nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 160 @ 5mA, 10V
Resistor - Base (R1): 10kOhms
Supplier Device Package: SOT-563
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
NSBC114TF3T5G dtc114t-d.pdf
NSBC114TF3T5G
Hersteller: onsemi
Description: TRANS PREBIAS NPN 50V SOT1123
Packaging: Bulk
Package / Case: SOT-1123
Mounting Type: Surface Mount
Transistor Type: NPN - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 250mV @ 1mA, 10mA
Current - Collector Cutoff (Max): 500nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 160 @ 5mA, 10V
Supplier Device Package: SOT-1123
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 254 mW
Resistor - Base (R1): 10 kOhms
Resistors Included: R1 Only
auf Bestellung 472000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
2407+0.18 EUR
Mindestbestellmenge: 2407
Im Einkaufswagen  Stück im Wert von  UAH
NSBC114TPDXV6T1G dtc114yp-d.pdf
NSBC114TPDXV6T1G
Hersteller: onsemi
Description: TRANS PREBIAS 1NPN 1PNP SOT-563
Packaging: Tape & Reel (TR)
Package / Case: SOT-563, SOT-666
Mounting Type: Surface Mount
Transistor Type: 1 NPN, 1 PNP - Pre-Biased (Dual)
Power - Max: 500mW
Current - Collector (Ic) (Max): 100mA
Voltage - Collector Emitter Breakdown (Max): 50V
Vce Saturation (Max) @ Ib, Ic: 250mV @ 1mA, 10mA
Current - Collector Cutoff (Max): 500nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 160 @ 5mA, 10V
Resistor - Base (R1): 10kOhms
Supplier Device Package: SOT-563
auf Bestellung 100000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
4000+0.11 EUR
8000+0.1 EUR
12000+0.095 EUR
20000+0.089 EUR
28000+0.085 EUR
40000+0.082 EUR
100000+0.074 EUR
Mindestbestellmenge: 4000
Im Einkaufswagen  Stück im Wert von  UAH
NSBC114TPDXV6T1G dtc114yp-d.pdf
NSBC114TPDXV6T1G
Hersteller: onsemi
Description: TRANS PREBIAS 1NPN 1PNP SOT-563
Packaging: Cut Tape (CT)
Package / Case: SOT-563, SOT-666
Mounting Type: Surface Mount
Transistor Type: 1 NPN, 1 PNP - Pre-Biased (Dual)
Power - Max: 500mW
Current - Collector (Ic) (Max): 100mA
Voltage - Collector Emitter Breakdown (Max): 50V
Vce Saturation (Max) @ Ib, Ic: 250mV @ 1mA, 10mA
Current - Collector Cutoff (Max): 500nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 160 @ 5mA, 10V
Resistor - Base (R1): 10kOhms
Supplier Device Package: SOT-563
auf Bestellung 100000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
33+0.55 EUR
Mindestbestellmenge: 33
Im Einkaufswagen  Stück im Wert von  UAH
NSBC114TPDXV6T1G dtc114yp-d.pdf
NSBC114TPDXV6T1G
Hersteller: onsemi
Description: TRANS PREBIAS 1NPN 1PNP SOT-563
Packaging: Bulk
Package / Case: SOT-563, SOT-666
Mounting Type: Surface Mount
Transistor Type: 1 NPN, 1 PNP - Pre-Biased (Dual)
Power - Max: 500mW
Current - Collector (Ic) (Max): 100mA
Voltage - Collector Emitter Breakdown (Max): 50V
Vce Saturation (Max) @ Ib, Ic: 250mV @ 1mA, 10mA
Current - Collector Cutoff (Max): 500nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 160 @ 5mA, 10V
Resistor - Base (R1): 10kOhms
Supplier Device Package: SOT-563
auf Bestellung 202500 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
1872+0.24 EUR
Mindestbestellmenge: 1872
Im Einkaufswagen  Stück im Wert von  UAH
NSBC114EPDXV6T1 NSBC114EPDXV6T1%2C5_Series.pdf
NSBC114EPDXV6T1
Hersteller: onsemi
Description: TRANS PREBIAS 1NPN 1PNP SOT-563
Packaging: Tape & Reel (TR)
Package / Case: SOT-563, SOT-666
Mounting Type: Surface Mount
Transistor Type: 1 NPN, 1 PNP - Pre-Biased (Dual)
Power - Max: 500mW
Current - Collector (Ic) (Max): 100mA
Voltage - Collector Emitter Breakdown (Max): 50V
Vce Saturation (Max) @ Ib, Ic: 250mV @ 300µA, 10mA
Current - Collector Cutoff (Max): 500nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 35 @ 5mA, 10V
Resistor - Base (R1): 10kOhms
Resistor - Emitter Base (R2): 10kOhms
Supplier Device Package: SOT-563
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
MBRF20200CT mbrf20200ct-d.pdf
MBRF20200CT
Hersteller: onsemi
Description: DIODE ARR SCHOT 200V 10A TO220FP
Packaging: Tube
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 10A
Supplier Device Package: TO-220FP
Operating Temperature - Junction: -65°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 900 mV @ 10 A
Current - Reverse Leakage @ Vr: 1 mA @ 200 V
auf Bestellung 9545 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
121+3.7 EUR
Mindestbestellmenge: 121
Im Einkaufswagen  Stück im Wert von  UAH
MBRF20200CT mbrf20200ct-d.pdf
MBRF20200CT
Hersteller: onsemi
Description: DIODE ARR SCHOT 200V 10A TO220FP
Packaging: Tube
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 10A
Supplier Device Package: TO-220FP
Operating Temperature - Junction: -65°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 900 mV @ 10 A
Current - Reverse Leakage @ Vr: 1 mA @ 200 V
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
TIP31A TIP31_A_B_C%2C%20TIP32_A_B_C.pdf
TIP31A
Hersteller: onsemi
Description: TRANS NPN 60V 3A TO-220-3
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Transistor Type: NPN
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 1.2V @ 375mA, 3A
Current - Collector Cutoff (Max): 300µA
DC Current Gain (hFE) (Min) @ Ic, Vce: 10 @ 3A, 4V
Frequency - Transition: 3MHz
Supplier Device Package: TO-220-3
Current - Collector (Ic) (Max): 3 A
Voltage - Collector Emitter Breakdown (Max): 60 V
Power - Max: 2 W
auf Bestellung 505 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
505+0.89 EUR
Mindestbestellmenge: 505
Im Einkaufswagen  Stück im Wert von  UAH
BD237 BD237-D.PDF
Hersteller: onsemi
Description: TRANS NPN 80V 2A TO-126
Packaging: Bulk
Package / Case: TO-225AA, TO-126-3
Mounting Type: Through Hole
Transistor Type: NPN
Operating Temperature: -55°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 600mV @ 100mA, 1A
Current - Collector Cutoff (Max): 100µA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 25 @ 1A, 2V
Frequency - Transition: 3MHz
Supplier Device Package: TO-126
Current - Collector (Ic) (Max): 2 A
Voltage - Collector Emitter Breakdown (Max): 80 V
Power - Max: 25 W
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
LM833D lm833.pdf?t.download=true&u=5oefqw
LM833D
Hersteller: onsemi
Description: IC AUDIO 2 CIRCUIT 8SOIC
Packaging: Bulk
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Amplifier Type: Audio
Operating Temperature: -40°C ~ 85°C
Current - Supply: 2.05mA (x2 Channels)
Slew Rate: 7V/µs
Gain Bandwidth Product: 16 MHz
Current - Input Bias: 300 nA
Voltage - Input Offset: 150 µV
Supplier Device Package: 8-SOIC
Number of Circuits: 2
Current - Output / Channel: 37 mA
Voltage - Supply Span (Min): 10 V
Voltage - Supply Span (Max): 36 V
auf Bestellung 6107 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
327+1.39 EUR
Mindestbestellmenge: 327
Im Einkaufswagen  Stück im Wert von  UAH
LB1830M-TLM-E LB1830M.pdf
LB1830M-TLM-E
Hersteller: onsemi
Description: IC MOTOR DRIVER 3V-9V 10MFPS
Packaging: Tape & Reel (TR)
Package / Case: 10-LSOP (0.173", 4.40mm Width)
Mounting Type: Surface Mount
Function: Driver - Fully Integrated, Control and Power Stage
Current - Output: 500mA
Interface: Parallel
Operating Temperature: -20°C ~ 80°C (TA)
Output Configuration: Half Bridge (2)
Voltage - Supply: 3V ~ 9V
Applications: General Purpose
Technology: Bipolar
Voltage - Load: 3V ~ 9V
Supplier Device Package: 10-MFPS
Motor Type - AC, DC: Brushed DC
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
MM74HC273MTC mm74hc273-d.pdf
MM74HC273MTC
Hersteller: onsemi
Description: IC FF D-TYPE SGL 8-BIT 20-TSSOP
Packaging: Tube
Package / Case: 20-TSSOP (0.173", 4.40mm Width)
Output Type: Non-Inverted
Mounting Type: Surface Mount
Number of Elements: 1
Function: Master Reset
Type: D-Type
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 2V ~ 6V
Current - Quiescent (Iq): 8 µA
Current - Output High, Low: 5.2mA, 5.2mA
Trigger Type: Positive Edge
Clock Frequency: 78 MHz
Input Capacitance: 7 pF
Supplier Device Package: 20-TSSOP
Max Propagation Delay @ V, Max CL: 23ns @ 6V, 50pF
Number of Bits per Element: 8
auf Bestellung 11894 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
16+1.14 EUR
22+0.83 EUR
75+0.67 EUR
150+0.63 EUR
300+0.6 EUR
525+0.58 EUR
1050+0.56 EUR
2550+0.54 EUR
5025+0.52 EUR
Mindestbestellmenge: 16
Im Einkaufswagen  Stück im Wert von  UAH
MC74HC273ADWR2G-Q mc74hc273a-d.pdf
MC74HC273ADWR2G-Q
Hersteller: onsemi
Description: LOG CMOS D FLIP FLOP OCTL
Packaging: Tape & Reel (TR)
Package / Case: 20-SOIC (0.295", 7.50mm Width)
Output Type: Non-Inverted
Mounting Type: Surface Mount
Number of Elements: 1
Function: Master Reset
Type: D-Type
Operating Temperature: -55°C ~ 125°C (TA)
Voltage - Supply: 2V ~ 6V
Current - Quiescent (Iq): 4 µA
Current - Output High, Low: 7.8mA, 7.8mA
Trigger Type: Positive Edge
Clock Frequency: 35 MHz
Input Capacitance: 10 pF
Supplier Device Package: 20-SOIC
Max Propagation Delay @ V, Max CL: 25ns @ 6V, 50pF
Grade: Automotive
Number of Bits per Element: 8
Qualification: AEC-Q100
auf Bestellung 90000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
1000+0.33 EUR
2000+0.32 EUR
5000+0.31 EUR
7000+0.3 EUR
25000+0.29 EUR
Mindestbestellmenge: 1000
Im Einkaufswagen  Stück im Wert von  UAH
MC74HC273ADWR2G-Q mc74hc273a-d.pdf
MC74HC273ADWR2G-Q
Hersteller: onsemi
Description: LOG CMOS D FLIP FLOP OCTL
Packaging: Cut Tape (CT)
Package / Case: 20-SOIC (0.295", 7.50mm Width)
Output Type: Non-Inverted
Mounting Type: Surface Mount
Number of Elements: 1
Function: Master Reset
Type: D-Type
Operating Temperature: -55°C ~ 125°C (TA)
Voltage - Supply: 2V ~ 6V
Current - Quiescent (Iq): 4 µA
Current - Output High, Low: 7.8mA, 7.8mA
Trigger Type: Positive Edge
Clock Frequency: 35 MHz
Input Capacitance: 10 pF
Supplier Device Package: 20-SOIC
Max Propagation Delay @ V, Max CL: 25ns @ 6V, 50pF
Grade: Automotive
Number of Bits per Element: 8
Qualification: AEC-Q100
auf Bestellung 90840 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
25+0.72 EUR
35+0.51 EUR
39+0.45 EUR
100+0.39 EUR
250+0.36 EUR
500+0.35 EUR
Mindestbestellmenge: 25
Im Einkaufswagen  Stück im Wert von  UAH
NCD57081ADR2G ncd57080-d.pdf
NCD57081ADR2G
Hersteller: onsemi
Description: ISOLATED DRIVER IN A COMPACT 8-P
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Current - Peak Output: 6.5A
Technology: Capacitive Coupling
Current - Output High, Low: 6.5A, 6.5A
Voltage - Isolation: 3750Vrms
Approval Agency: UL, VDE
Supplier Device Package: 8-SOIC
Rise / Fall Time (Typ): 13ns, 13ns
Common Mode Transient Immunity (Min): 100kV/µs
Propagation Delay tpLH / tpHL (Max): 90ns, 90ns
Pulse Width Distortion (Max): 25ns
Number of Channels: 1
Voltage - Output Supply: 0V ~ 32V
auf Bestellung 12500 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
2500+2.59 EUR
5000+2.54 EUR
Mindestbestellmenge: 2500
Im Einkaufswagen  Stück im Wert von  UAH
NCD57081ADR2G ncd57080-d.pdf
NCD57081ADR2G
Hersteller: onsemi
Description: ISOLATED DRIVER IN A COMPACT 8-P
Packaging: Cut Tape (CT)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Current - Peak Output: 6.5A
Technology: Capacitive Coupling
Current - Output High, Low: 6.5A, 6.5A
Voltage - Isolation: 3750Vrms
Approval Agency: UL, VDE
Supplier Device Package: 8-SOIC
Rise / Fall Time (Typ): 13ns, 13ns
Common Mode Transient Immunity (Min): 100kV/µs
Propagation Delay tpLH / tpHL (Max): 90ns, 90ns
Pulse Width Distortion (Max): 25ns
Number of Channels: 1
Voltage - Output Supply: 0V ~ 32V
auf Bestellung 14134 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
4+4.86 EUR
10+3.64 EUR
25+3.33 EUR
100+3 EUR
250+2.84 EUR
500+2.75 EUR
1000+2.67 EUR
Mindestbestellmenge: 4
Im Einkaufswagen  Stück im Wert von  UAH
MBR10100 mbr1080-d.pdf
MBR10100
Hersteller: onsemi
Description: DIODE SCHOTTKY 100V 10A TO2202
Packaging: Tube
Package / Case: TO-220-2
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 10A
Supplier Device Package: TO-220-2
Operating Temperature - Junction: -65°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 800 mV @ 10 A
Current - Reverse Leakage @ Vr: 100 µA @ 100 V
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
TIP42CTU-T TIP42_TIP42C_Rev2_Nov2017.PDF
TIP42CTU-T
Hersteller: onsemi
Description: TRANS PNP 100V 6A TO-220-3
Packaging: Bulk
Package / Case: TO-220-3
Mounting Type: Through Hole
Transistor Type: PNP
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 1.5V @ 600mA, 6A
Current - Collector Cutoff (Max): 700µA
DC Current Gain (hFE) (Min) @ Ic, Vce: 15 @ 3A, 4V
Frequency - Transition: 3MHz
Supplier Device Package: TO-220-3
Current - Collector (Ic) (Max): 6 A
Voltage - Collector Emitter Breakdown (Max): 100 V
Power - Max: 2 W
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
NVMFWS4D0N04XMT1G nvmfws4d0n04xm-d.pdf
NVMFWS4D0N04XMT1G
Hersteller: onsemi
Description: SINGLE N-CHANNEL POWER MOSFET 40
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN, 5 Leads
Mounting Type: Surface Mount, Wettable Flank
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 80A (Tc)
Rds On (Max) @ Id, Vgs: 3.9mOhm @ 6A, 10V
Power Dissipation (Max): 43W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 30µA
Supplier Device Package: 5-DFNW (4.9x5.9) (8-SOFL-WF)
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 12 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 784 pF @ 25 V
Qualification: AEC-Q101
auf Bestellung 66000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
1500+0.64 EUR
3000+0.62 EUR
4500+0.61 EUR
7500+0.6 EUR
15000+0.59 EUR
Mindestbestellmenge: 1500
Im Einkaufswagen  Stück im Wert von  UAH
NVMFWS4D0N04XMT1G nvmfws4d0n04xm-d.pdf
NVMFWS4D0N04XMT1G
Hersteller: onsemi
Description: SINGLE N-CHANNEL POWER MOSFET 40
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN, 5 Leads
Mounting Type: Surface Mount, Wettable Flank
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 80A (Tc)
Rds On (Max) @ Id, Vgs: 3.9mOhm @ 6A, 10V
Power Dissipation (Max): 43W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 30µA
Supplier Device Package: 5-DFNW (4.9x5.9) (8-SOFL-WF)
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 12 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 784 pF @ 25 V
Qualification: AEC-Q101
auf Bestellung 67456 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
14+1.32 EUR
19+0.95 EUR
25+0.86 EUR
100+0.76 EUR
250+0.71 EUR
500+0.68 EUR
Mindestbestellmenge: 14
Im Einkaufswagen  Stück im Wert von  UAH
NVMFS4841NT1G nvmfs4841n-d.pdf
NVMFS4841NT1G
Hersteller: onsemi
Description: MOSFET N-CH 30V 16A 5DFN
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN, 5 Leads
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 16A (Ta)
Rds On (Max) @ Id, Vgs: 7mOhm @ 30A, 10V
Power Dissipation (Max): 3.7W (Ta), 112W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: 5-DFN (5x6) (8-SOFL)
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 17 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 1436 pF @ 12 V
Qualification: AEC-Q101
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
ES1J ES1J-D.PDF
ES1J
Hersteller: onsemi
Description: DIODE STANDARD 600V 1A DO214AC
Packaging: Tape & Reel (TR)
Package / Case: DO-214AC, SMA
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 35 ns
Technology: Standard
Capacitance @ Vr, F: 8pF @ 0V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: DO-214AC (SMA)
Operating Temperature - Junction: 150°C (Max)
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 1 A
Current - Reverse Leakage @ Vr: 5 µA @ 600 V
auf Bestellung 275500 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
7500+0.12 EUR
Mindestbestellmenge: 7500
Im Einkaufswagen  Stück im Wert von  UAH
ES1J ES1J-D.PDF
ES1J
Hersteller: onsemi
Description: DIODE STANDARD 600V 1A DO214AC
Packaging: Cut Tape (CT)
Package / Case: DO-214AC, SMA
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 35 ns
Technology: Standard
Capacitance @ Vr, F: 8pF @ 0V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: DO-214AC (SMA)
Operating Temperature - Junction: 150°C (Max)
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 1 A
Current - Reverse Leakage @ Vr: 5 µA @ 600 V
auf Bestellung 275777 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
35+0.51 EUR
51+0.35 EUR
100+0.28 EUR
500+0.21 EUR
1000+0.18 EUR
2000+0.17 EUR
Mindestbestellmenge: 35
Im Einkaufswagen  Stück im Wert von  UAH
PN2907BU pn2907-d.pdf
PN2907BU
Hersteller: onsemi
Description: TRANS PNP 40V 0.8A TO-92-3
Packaging: Bulk
Package / Case: TO-226-3, TO-92-3 (TO-226AA)
Mounting Type: Through Hole
Transistor Type: PNP
Operating Temperature: -55°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 1.6V @ 50mA, 500mA
Current - Collector Cutoff (Max): 20nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 150mA, 10V
Supplier Device Package: TO-92-3
Current - Collector (Ic) (Max): 800 mA
Voltage - Collector Emitter Breakdown (Max): 40 V
Power - Max: 625 mW
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
LC75836WS-T-E
LC75836WS-T-E
Hersteller: onsemi
Description: IC DRVR 140 SEGMENT 48SQFP
Packaging: Tray
Package / Case: 48-LQFP
Display Type: LCD
Mounting Type: Surface Mount
Interface: Serial
Configuration: 140 Segment
Operating Temperature: -40°C ~ 85°C
Voltage - Supply: 4.5V ~ 6V
Supplier Device Package: 48-SQFP (7x7)
Current - Supply: 450 µA
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
1.5KE30A 1N6267A_Series.pdf
1.5KE30A
Hersteller: onsemi
Description: TVS DIODE 25.6VWM 41.4VC AXIAL
Packaging: Bulk
Package / Case: DO-201AD, Axial
Mounting Type: Through Hole
Type: Zener
Operating Temperature: -65°C ~ 175°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 36A
Voltage - Reverse Standoff (Typ): 25.6V
Supplier Device Package: Axial
Unidirectional Channels: 1
Voltage - Breakdown (Min): 28.5V
Voltage - Clamping (Max) @ Ipp: 41.4V
Power - Peak Pulse: 1500W (1.5kW)
Power Line Protection: No
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
NL17SZ17DBVT1G nl17sz17-d.pdf
NL17SZ17DBVT1G
Hersteller: onsemi
Description: IC BUFFER NON-INVERT 5.5V SC-74A
Packaging: Tape & Reel (TR)
Package / Case: SC-74A, SOT-753
Output Type: Push-Pull
Mounting Type: Surface Mount
Number of Elements: 1
Logic Type: Buffer, Non-Inverting
Operating Temperature: -55°C ~ 125°C (TA)
Voltage - Supply: 1.65V ~ 5.5V
Input Type: Schmitt Trigger
Number of Bits per Element: 1
Current - Output High, Low: 32mA, 32mA
Supplier Device Package: SC-74A
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
NL17SZ17DBVT1G nl17sz17-d.pdf
NL17SZ17DBVT1G
Hersteller: onsemi
Description: IC BUFFER NON-INVERT 5.5V SC-74A
Packaging: Cut Tape (CT)
Package / Case: SC-74A, SOT-753
Output Type: Push-Pull
Mounting Type: Surface Mount
Number of Elements: 1
Logic Type: Buffer, Non-Inverting
Operating Temperature: -55°C ~ 125°C (TA)
Voltage - Supply: 1.65V ~ 5.5V
Input Type: Schmitt Trigger
Number of Bits per Element: 1
Current - Output High, Low: 32mA, 32mA
Supplier Device Package: SC-74A
auf Bestellung 1436 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
125+0.14 EUR
244+0.072 EUR
285+0.062 EUR
339+0.052 EUR
375+0.047 EUR
500+0.044 EUR
1000+0.042 EUR
Mindestbestellmenge: 125
Im Einkaufswagen  Stück im Wert von  UAH
AF0130CSSM30SMD20 af0130-pd-d.pdf
AF0130CSSM30SMD20
Hersteller: onsemi
Description: 1 MP 1/3 CIS
Packaging: Bulk
Package / Case: Die
Type: CMOS
Operating Temperature: -30°C ~ 85°C
Voltage - Supply: 1.2V ~ 2.8V
Pixel Size: 3.5µm x 3.5µm
Active Pixel Array: 1280H x 960V
Supplier Device Package: Die
Frames per Second: 60.0
auf Bestellung 1840 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
1+91.87 EUR
5+84.89 EUR
10+82.29 EUR
25+79.19 EUR
50+77.06 EUR
100+75.11 EUR
Im Einkaufswagen  Stück im Wert von  UAH
AF0131CSSM30SMKA1-CR2 af0130-pd-d.pdf
AF0131CSSM30SMKA1-CR2
Hersteller: onsemi
Description: 1MP 1/3 CIS SO
Packaging: Tray
Package / Case: 87-WFBGA, CSPBGA
Type: CMOS
Operating Temperature: -30°C ~ 85°C
Voltage - Supply: 1.2V ~ 2.8V
Pixel Size: 3.5µm x 3.5µm
Active Pixel Array: 1280H x 960V
Supplier Device Package: 87-ODCSP (6.05x4.83)
Frames per Second: 110.0
auf Bestellung 250 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
1+119.43 EUR
5+110.67 EUR
10+107.4 EUR
25+103.5 EUR
50+100.82 EUR
100+98.37 EUR
Im Einkaufswagen  Stück im Wert von  UAH
AF0131CSSM30SMKA1-CP2 af0130-pd-d.pdf
AF0131CSSM30SMKA1-CP2
Hersteller: onsemi
Description: 1MP 1/3 CIS SO
Packaging: Tray
Package / Case: 87-WFBGA, CSPBGA
Type: CMOS
Operating Temperature: -30°C ~ 85°C
Voltage - Supply: 1.2V ~ 2.8V
Pixel Size: 3.5µm x 3.5µm
Active Pixel Array: 1280H x 960V
Supplier Device Package: 87-ODCSP (6.05x4.83)
Frames per Second: 110.0
auf Bestellung 2950 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
1+120.33 EUR
5+111.5 EUR
10+108.22 EUR
25+104.29 EUR
50+101.6 EUR
100+99.13 EUR
Im Einkaufswagen  Stück im Wert von  UAH
AF0130CSSM30SMKA1-CR2 af0130-pd-d.pdf
AF0130CSSM30SMKA1-CR2
Hersteller: onsemi
Description: 1MP 1/3 CIS SO
Packaging: Tray
Package / Case: 87-WFBGA, CSPBGA
Type: CMOS
Operating Temperature: -30°C ~ 85°C
Voltage - Supply: 1.2V ~ 2.8V
Pixel Size: 3.5µm x 3.5µm
Active Pixel Array: 1280H x 960V
Supplier Device Package: 87-ODCSP (6.05x4.83)
Frames per Second: 110.0
auf Bestellung 199 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
1+120.56 EUR
5+111.72 EUR
10+108.43 EUR
25+104.5 EUR
50+101.8 EUR
100+99.33 EUR
Im Einkaufswagen  Stück im Wert von  UAH
AF0130CSSM30SMKA1-CP2 af0130-pd-d.pdf
AF0130CSSM30SMKA1-CP2
Hersteller: onsemi
Description: 1MP 1/3 CIS SO
Packaging: Tray
Package / Case: 87-WFBGA, CSPBGA
Type: CMOS
Operating Temperature: -30°C ~ 85°C
Voltage - Supply: 1.2V ~ 2.8V
Pixel Size: 3.5µm x 3.5µm
Active Pixel Array: 1280H x 960V
Supplier Device Package: 87-ODCSP (6.05x4.83)
Frames per Second: 110.0
auf Bestellung 2850 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
1+121.21 EUR
5+112.34 EUR
10+109.04 EUR
25+105.08 EUR
50+102.37 EUR
100+99.88 EUR
Im Einkaufswagen  Stück im Wert von  UAH
MMBZ5239BLT3 mmbz5221blt1-d.pdf
MMBZ5239BLT3
Hersteller: onsemi
Description: DIODE ZENER 9.1V 225MW SOT23-3
Packaging: Bulk
Tolerance: ±5%
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C
Voltage - Zener (Nom) (Vz): 9.1 V
Impedance (Max) (Zzt): 10 Ohms
Supplier Device Package: SOT-23-3 (TO-236)
Power - Max: 225 mW
Voltage - Forward (Vf) (Max) @ If: 900 mV @ 10 mA
Current - Reverse Leakage @ Vr: 3 µA @ 7 V
auf Bestellung 40000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
7869+0.06 EUR
Mindestbestellmenge: 7869
Im Einkaufswagen  Stück im Wert von  UAH
MMBZ5239B FAIR-S-A0002364146-1.pdf?t.download=true&u=5oefqw
MMBZ5239B
Hersteller: onsemi
Description: DIODE ZENER 9.1V 300MW SOT23
Packaging: Bulk
Tolerance: ±5%
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Voltage - Zener (Nom) (Vz): 9.1 V
Impedance (Max) (Zzt): 10 Ohms
Supplier Device Package: SOT-23
Power - Max: 300 mW
Voltage - Forward (Vf) (Max) @ If: 900 mV @ 10 mA
Current - Reverse Leakage @ Vr: 3 µA @ 7 V
auf Bestellung 39000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
7869+0.06 EUR
Mindestbestellmenge: 7869
Im Einkaufswagen  Stück im Wert von  UAH
MMBZ5239B MMBZ5221B-5257B.pdf
MMBZ5239B
Hersteller: onsemi
Description: DIODE ZENER 9.1V 350MW SOT23-3
Packaging: Tape & Reel (TR)
Tolerance: ±5%
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C
Voltage - Zener (Nom) (Vz): 9.1 V
Impedance (Max) (Zzt): 10 Ohms
Supplier Device Package: SOT-23-3
Power - Max: 350 mW
Voltage - Forward (Vf) (Max) @ If: 900 mV @ 10 mA
Current - Reverse Leakage @ Vr: 3 µA @ 7 V
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
CAT24C08WI-G cat24c01-d.pdf
CAT24C08WI-G
Hersteller: onsemi
Description: IC EEPROM 8KBIT I2C 400KHZ 8SOIC
Packaging: Tube
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Memory Size: 8Kbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 1.7V ~ 5.5V
Technology: EEPROM
Clock Frequency: 400 kHz
Memory Format: EEPROM
Supplier Device Package: 8-SOIC
Write Cycle Time - Word, Page: 5ms
Memory Interface: I2C
Access Time: 900 ns
Memory Organization: 1K x 8
DigiKey Programmable: Verified
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
KBU8M KBU8A-KBU8M_Rev2010_DS.pdf
KBU8M
Hersteller: onsemi
Description: BRIDGE RECT 1PHASE 1KV 8A KBU
Packaging: Bulk
Package / Case: 4-SIP, KBU
Mounting Type: Through Hole
Diode Type: Single Phase
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: KBU
Voltage - Peak Reverse (Max): 1 kV
Current - Average Rectified (Io): 8 A
Voltage - Forward (Vf) (Max) @ If: 1 V @ 8 A
Current - Reverse Leakage @ Vr: 10 µA @ 1000 V
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
FQA17N40 FQA17N40.pdf
FQA17N40
Hersteller: onsemi
Description: MOSFET N-CH 400V 17.2A TO3P
Packaging: Tube
Package / Case: TO-3P-3, SC-65-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 17.2A (Tc)
Rds On (Max) @ Id, Vgs: 270mOhm @ 8.6A, 10V
Power Dissipation (Max): 190W (Tc)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: TO-3P
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 400 V
Gate Charge (Qg) (Max) @ Vgs: 60 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2300 pF @ 25 V
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
ES3D ES3J-D.PDF
ES3D
Hersteller: onsemi
Description: DIODE STANDARD 200V 3A DO214AB
Packaging: Tape & Reel (TR)
Package / Case: DO-214AB, SMC
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 20 ns
Technology: Standard
Capacitance @ Vr, F: 45pF @ 4V, 1MHz
Current - Average Rectified (Io): 3A
Supplier Device Package: DO-214AB (SMC)
Operating Temperature - Junction: -50°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 950 mV @ 3 A
Current - Reverse Leakage @ Vr: 10 µA @ 200 V
auf Bestellung 39000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
3000+0.26 EUR
9000+0.25 EUR
21000+0.23 EUR
Mindestbestellmenge: 3000
Im Einkaufswagen  Stück im Wert von  UAH
ES3D ES3J-D.PDF
ES3D
Hersteller: onsemi
Description: DIODE STANDARD 200V 3A DO214AB
Packaging: Cut Tape (CT)
Package / Case: DO-214AB, SMC
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 20 ns
Technology: Standard
Capacitance @ Vr, F: 45pF @ 4V, 1MHz
Current - Average Rectified (Io): 3A
Supplier Device Package: DO-214AB (SMC)
Operating Temperature - Junction: -50°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 950 mV @ 3 A
Current - Reverse Leakage @ Vr: 10 µA @ 200 V
auf Bestellung 41448 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
19+0.97 EUR
29+0.61 EUR
100+0.49 EUR
500+0.38 EUR
1000+0.34 EUR
Mindestbestellmenge: 19
Im Einkaufswagen  Stück im Wert von  UAH
NSVBAS70LT1G bas70lt1-d.pdf
NSVBAS70LT1G
Hersteller: onsemi
Description: DIODE SCHOTTKY 70V 70MA SOT233
Packaging: Bulk
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Speed: Small Signal =< 200mA (Io), Any Speed
Technology: Schottky
Capacitance @ Vr, F: 2pF @ 0V, 1MHz
Current - Average Rectified (Io): 70mA
Supplier Device Package: SOT-23-3 (TO-236)
Operating Temperature - Junction: -55°C ~ 150°C
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 70 V
Voltage - Forward (Vf) (Max) @ If: 1 V @ 15 mA
Current - Reverse Leakage @ Vr: 10 µA @ 70 V
Qualification: AEC-Q101
auf Bestellung 6500 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
2141+0.21 EUR
Mindestbestellmenge: 2141
Im Einkaufswagen  Stück im Wert von  UAH
Wählen Sie Seite:   [  << Vorherige Seite ]  1 231 462 693 924 1155 1285 1286 1287 1288 1289 1290 1291 1292 1293 1294 1295 1386 1617 1848 2079 2310 2312  [ Nächste Seite >> ]