| Foto | Bezeichnung | Hersteller | Beschreibung |
Verfügbarkeit |
Preis |
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KSP92BU | onsemi |
Description: TRANS PNP 300V 0.5A TO-92-3Packaging: Bulk Package / Case: TO-226-3, TO-92-3 (TO-226AA) Mounting Type: Through Hole Transistor Type: PNP Operating Temperature: 150°C (TJ) Vce Saturation (Max) @ Ib, Ic: 500mV @ 2mA, 20mA Current - Collector Cutoff (Max): 250nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 25 @ 30mA, 10V Frequency - Transition: 50MHz Supplier Device Package: TO-92-3 Part Status: Active Current - Collector (Ic) (Max): 500 mA Voltage - Collector Emitter Breakdown (Max): 300 V Power - Max: 625 mW |
auf Bestellung 32419 Stücke: Lieferzeit 10-14 Tag (e) |
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KSA992PTA | onsemi |
Description: TRANS PNP 120V 0.05A TO-92-3Packaging: Tape & Box (TB) Package / Case: TO-226-3, TO-92-3 (TO-226AA) Formed Leads Mounting Type: Through Hole Transistor Type: PNP Operating Temperature: 150°C (TJ) Vce Saturation (Max) @ Ib, Ic: 300mV @ 1mA, 10mA Current - Collector Cutoff (Max): 1µA DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 1mA, 6V Frequency - Transition: 100MHz Supplier Device Package: TO-92-3 Part Status: Obsolete Current - Collector (Ic) (Max): 50 mA Voltage - Collector Emitter Breakdown (Max): 120 V Power - Max: 500 mW |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 2000 Stücke Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||||
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KSP2907ACTA | onsemi |
Description: TRANS PNP 60V 0.6A TO-92-3Packaging: Tape & Box (TB) Package / Case: TO-226-3, TO-92-3 (TO-226AA) Formed Leads Mounting Type: Through Hole Transistor Type: PNP Operating Temperature: 150°C (TJ) Vce Saturation (Max) @ Ib, Ic: 1.6V @ 50mA, 500mA Current - Collector Cutoff (Max): 10nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 150mA, 10V Frequency - Transition: 200MHz Supplier Device Package: TO-92-3 Part Status: Active Current - Collector (Ic) (Max): 600 mA Voltage - Collector Emitter Breakdown (Max): 60 V Power - Max: 625 mW |
auf Bestellung 6000 Stücke: Lieferzeit 10-14 Tag (e) |
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KSA992FTA | onsemi |
Description: TRANS PNP 120V 0.05A TO-92-3Packaging: Tape & Box (TB) Package / Case: TO-226-3, TO-92-3 (TO-226AA) Formed Leads Mounting Type: Through Hole Transistor Type: PNP Operating Temperature: 150°C (TJ) Vce Saturation (Max) @ Ib, Ic: 300mV @ 1mA, 10mA Current - Collector Cutoff (Max): 1µA DC Current Gain (hFE) (Min) @ Ic, Vce: 300 @ 1mA, 6V Frequency - Transition: 100MHz Supplier Device Package: TO-92-3 Part Status: Active Current - Collector (Ic) (Max): 50 mA Voltage - Collector Emitter Breakdown (Max): 120 V Power - Max: 500 mW |
auf Bestellung 8000 Stücke: Lieferzeit 10-14 Tag (e) |
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KSP2907ACBU | onsemi |
Description: TRANS PNP 60V 0.6A TO-92-3Packaging: Bulk Package / Case: TO-226-3, TO-92-3 (TO-226AA) Mounting Type: Through Hole Transistor Type: PNP Operating Temperature: 150°C (TJ) Vce Saturation (Max) @ Ib, Ic: 1.6V @ 50mA, 500mA Current - Collector Cutoff (Max): 10nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 150mA, 10V Frequency - Transition: 200MHz Supplier Device Package: TO-92-3 Part Status: Obsolete Current - Collector (Ic) (Max): 600 mA Voltage - Collector Emitter Breakdown (Max): 60 V Power - Max: 625 mW |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 10000 Stücke Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||||
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KSB564ACGTA | onsemi |
Description: TRANS PNP 25V 1A TO92-3Power - Max: 800 mW Voltage - Collector Emitter Breakdown (Max): 25 V Current - Collector (Ic) (Max): 1 A Part Status: Obsolete Supplier Device Package: TO-92-3 Frequency - Transition: 110MHz DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 100mA, 1V Current - Collector Cutoff (Max): 100nA (ICBO) Vce Saturation (Max) @ Ib, Ic: 500mV @ 100mA, 1A Operating Temperature: 150°C (TJ) Transistor Type: PNP Mounting Type: Through Hole Package / Case: TO-226-3, TO-92-3 (TO-226AA) Formed Leads Packaging: Tape & Box (TB) |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||||
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KSB564AOTA | onsemi |
Description: TRANS PNP 25V 1A TO92-3Power - Max: 800 mW Voltage - Collector Emitter Breakdown (Max): 25 V Current - Collector (Ic) (Max): 1 A Part Status: Obsolete Supplier Device Package: TO-92-3 Frequency - Transition: 110MHz DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 100mA, 1V Current - Collector Cutoff (Max): 100nA (ICBO) Vce Saturation (Max) @ Ib, Ic: 500mV @ 100mA, 1A Operating Temperature: 150°C (TJ) Transistor Type: PNP Mounting Type: Through Hole Package / Case: TO-226-3, TO-92-3 (TO-226AA) Formed Leads Packaging: Tape & Box (TB) |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||||
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MMBD1503 | onsemi |
Description: DIODE ARR GP 200V 200MA SOT23-3Current - Reverse Leakage @ Vr: 10 nA @ 180 V Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 200 mA Voltage - DC Reverse (Vr) (Max): 200 V Part Status: Obsolete Operating Temperature - Junction: 150°C (Max) Supplier Device Package: SOT-23-3 Current - Average Rectified (Io) (per Diode): 200mA Diode Configuration: 1 Pair Series Connection Technology: Standard Speed: Small Signal =< 200mA (Io), Any Speed Mounting Type: Surface Mount Package / Case: TO-236-3, SC-59, SOT-23-3 Packaging: Tape & Reel (TR) |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||||
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KSB564ACOTA | onsemi |
Description: TRANS PNP 25V 1A TO92-3Power - Max: 800 mW Voltage - Collector Emitter Breakdown (Max): 25 V Current - Collector (Ic) (Max): 1 A Part Status: Obsolete Supplier Device Package: TO-92-3 Frequency - Transition: 110MHz DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 100mA, 1V Current - Collector Cutoff (Max): 100nA (ICBO) Vce Saturation (Max) @ Ib, Ic: 500mV @ 100mA, 1A Operating Temperature: 150°C (TJ) Transistor Type: PNP Mounting Type: Through Hole Package / Case: TO-226-3, TO-92-3 (TO-226AA) Formed Leads Packaging: Tape & Box (TB) |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||||
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KSC2331YSHTA | onsemi |
Description: TRANS NPN 60V 0.7A TO-92-3Power - Max: 1 W Voltage - Collector Emitter Breakdown (Max): 60 V Current - Collector (Ic) (Max): 700 mA Supplier Device Package: TO-92-3 Frequency - Transition: 50MHz DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 50mA, 2V Current - Collector Cutoff (Max): 100nA (ICBO) Vce Saturation (Max) @ Ib, Ic: 700mV @ 50mA, 500mA Operating Temperature: 150°C (TJ) Transistor Type: NPN Mounting Type: Through Hole Package / Case: TO-226-3, TO-92-3 Long Body, Formed Leads Packaging: Tape & Box (TB) |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||||
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KSB564AGBU | onsemi |
Description: TRANS PNP 25V 1A TO92-3Power - Max: 800 mW Voltage - Collector Emitter Breakdown (Max): 25 V Current - Collector (Ic) (Max): 1 A Part Status: Obsolete Supplier Device Package: TO-92-3 Frequency - Transition: 110MHz DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 100mA, 1V Current - Collector Cutoff (Max): 100nA (ICBO) Vce Saturation (Max) @ Ib, Ic: 500mV @ 100mA, 1A Operating Temperature: 150°C (TJ) Transistor Type: PNP Mounting Type: Through Hole Package / Case: TO-226-3, TO-92-3 (TO-226AA) Packaging: Bulk |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||||
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KSD1020YBU | onsemi |
Description: TRANS NPN 25V 0.7A TO92SPower - Max: 350 mW Voltage - Collector Emitter Breakdown (Max): 25 V Current - Collector (Ic) (Max): 700 mA Supplier Device Package: TO-92S Frequency - Transition: 170MHz DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 100mA, 1V Current - Collector Cutoff (Max): 100nA (ICBO) Vce Saturation (Max) @ Ib, Ic: 400mV @ 70mA, 700mA Operating Temperature: 150°C (TJ) Transistor Type: NPN Mounting Type: Through Hole Package / Case: TO-226-3, TO-92-3 Short Body Packaging: Bulk |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||||
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KSD1021YBU | onsemi |
Description: TRANS NPN 30V 1A TO92SPower - Max: 350 mW Voltage - Collector Emitter Breakdown (Max): 30 V Current - Collector (Ic) (Max): 1 A Part Status: Obsolete Supplier Device Package: TO-92S Frequency - Transition: 130MHz DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 100mA, 1V Current - Collector Cutoff (Max): 100nA (ICBO) Vce Saturation (Max) @ Ib, Ic: 500mV @ 100mA, 1A Operating Temperature: 150°C (TJ) Transistor Type: NPN Mounting Type: Through Hole Package / Case: TO-226-3, TO-92-3 Short Body Packaging: Bulk |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||||
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KSA709GTA | onsemi |
Description: TRANS PNP 150V 0.7A TO92-3Power - Max: 800 mW Voltage - Collector Emitter Breakdown (Max): 150 V Current - Collector (Ic) (Max): 700 mA Supplier Device Package: TO-92-3 Frequency - Transition: 50MHz DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 50mA, 2V Current - Collector Cutoff (Max): 100nA (ICBO) Vce Saturation (Max) @ Ib, Ic: 400mV @ 20mA, 200mA Operating Temperature: 150°C (TJ) Transistor Type: PNP Mounting Type: Through Hole Package / Case: TO-226-3, TO-92-3 (TO-226AA) Formed Leads Packaging: Tape & Box (TB) |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||||
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KSB564AGTA | onsemi |
Description: TRANS PNP 25V 1A TO92-3Power - Max: 800 mW Voltage - Collector Emitter Breakdown (Max): 25 V Current - Collector (Ic) (Max): 1 A Part Status: Obsolete Supplier Device Package: TO-92-3 Frequency - Transition: 110MHz DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 100mA, 1V Current - Collector Cutoff (Max): 100nA (ICBO) Vce Saturation (Max) @ Ib, Ic: 500mV @ 100mA, 1A Operating Temperature: 150°C (TJ) Transistor Type: PNP Mounting Type: Through Hole Package / Case: TO-226-3, TO-92-3 (TO-226AA) Formed Leads Packaging: Tape & Box (TB) |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||||
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KSB564AYBU | onsemi |
Description: TRANS PNP 25V 1A TO92-3Power - Max: 800 mW Voltage - Collector Emitter Breakdown (Max): 25 V Current - Collector (Ic) (Max): 1 A Part Status: Obsolete Supplier Device Package: TO-92-3 Frequency - Transition: 110MHz DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 100mA, 1V Current - Collector Cutoff (Max): 100nA (ICBO) Vce Saturation (Max) @ Ib, Ic: 500mV @ 100mA, 1A Operating Temperature: 150°C (TJ) Transistor Type: PNP Mounting Type: Through Hole Package / Case: TO-226-3, TO-92-3 (TO-226AA) Packaging: Bulk |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||||
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KSB564AOBU | onsemi |
Description: TRANS PNP 25V 1A TO92-3Power - Max: 800 mW Voltage - Collector Emitter Breakdown (Max): 25 V Current - Collector (Ic) (Max): 1 A Part Status: Obsolete Supplier Device Package: TO-92-3 Frequency - Transition: 110MHz DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 100mA, 1V Current - Collector Cutoff (Max): 100nA (ICBO) Vce Saturation (Max) @ Ib, Ic: 500mV @ 100mA, 1A Operating Temperature: 150°C (TJ) Transistor Type: PNP Mounting Type: Through Hole Package / Case: TO-226-3, TO-92-3 (TO-226AA) Packaging: Bulk |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||||
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MMBD1404A | onsemi |
Description: DIODE ARR GP 175V 200MA SOT23-3Packaging: Tape & Reel (TR) Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Speed: Small Signal =< 200mA (Io), Any Speed Reverse Recovery Time (trr): 50 ns Technology: Standard Diode Configuration: 1 Pair Common Cathode Current - Average Rectified (Io) (per Diode): 200mA Supplier Device Package: SOT-23-3 Operating Temperature - Junction: 150°C (Max) Part Status: Active Voltage - DC Reverse (Vr) (Max): 175 V Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 200 mA Current - Reverse Leakage @ Vr: 100 nA @ 175 V |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 3000 Stücke Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||||
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KSD1020GTA | onsemi |
Description: TRANS NPN 25V 0.7A TO92STransistor Type: NPN Mounting Type: Through Hole Package / Case: TO-226-3, TO-92-3 Short Body Packaging: Tape & Box (TB) Power - Max: 350 mW Voltage - Collector Emitter Breakdown (Max): 25 V Current - Collector (Ic) (Max): 700 mA Supplier Device Package: TO-92S Frequency - Transition: 170MHz DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 100mA, 1V Current - Collector Cutoff (Max): 100nA (ICBO) Vce Saturation (Max) @ Ib, Ic: 400mV @ 70mA, 700mA Operating Temperature: 150°C (TJ) |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||||
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KSB564ACOBU | onsemi |
Description: TRANS PNP 25V 1A TO92-3Power - Max: 800 mW Voltage - Collector Emitter Breakdown (Max): 25 V Current - Collector (Ic) (Max): 1 A Part Status: Obsolete Supplier Device Package: TO-92-3 Frequency - Transition: 110MHz DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 100mA, 1V Current - Collector Cutoff (Max): 100nA (ICBO) Vce Saturation (Max) @ Ib, Ic: 500mV @ 100mA, 1A Operating Temperature: 150°C (TJ) Transistor Type: PNP Mounting Type: Through Hole Package / Case: TO-226-3, TO-92-3 (TO-226AA) Packaging: Bulk |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||||
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KSC5019NTA | onsemi |
Description: TRANS NPN 10V 2A TO-92 |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||||
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MMBD1505 | onsemi |
Description: DIODE ARRAY GP 200V 200MA SOT233Current - Reverse Leakage @ Vr: 10 nA @ 180 V Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 200 mA Voltage - DC Reverse (Vr) (Max): 200 V Operating Temperature - Junction: 150°C (Max) Supplier Device Package: SOT-23-3 Current - Average Rectified (Io) (per Diode): 200mA Diode Configuration: 1 Pair Common Anode Technology: Standard Speed: Small Signal =< 200mA (Io), Any Speed Mounting Type: Surface Mount Package / Case: TO-236-3, SC-59, SOT-23-3 Packaging: Tape & Reel (TR) |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||||
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KSA709CGTA | onsemi |
Description: TRANS PNP 150V 0.7A TO92-3Power - Max: 800 mW Voltage - Collector Emitter Breakdown (Max): 150 V Current - Collector (Ic) (Max): 700 mA Supplier Device Package: TO-92-3 Frequency - Transition: 50MHz DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 50mA, 2V Current - Collector Cutoff (Max): 100nA (ICBO) Vce Saturation (Max) @ Ib, Ic: 400mV @ 20mA, 200mA Operating Temperature: 150°C (TJ) Transistor Type: PNP Mounting Type: Through Hole Package / Case: TO-226-3, TO-92-3 (TO-226AA) Formed Leads Packaging: Tape & Box (TB) |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||||
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FJX4003RTF | onsemi |
Description: TRANS PREBIAS PNP 200MW SOT323Resistor - Emitter Base (R2): 22 kOhms Resistor - Base (R1): 22 kOhms Frequency - Transition: 200 MHz Power - Max: 200 mW Voltage - Collector Emitter Breakdown (Max): 50 V Current - Collector (Ic) (Max): 100 mA Supplier Device Package: SOT-323 DC Current Gain (hFE) (Min) @ Ic, Vce: 56 @ 5mA, 5V Current - Collector Cutoff (Max): 100nA (ICBO) Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 10mA Transistor Type: PNP - Pre-Biased Mounting Type: Surface Mount Package / Case: SC-70, SOT-323 Packaging: Tape & Reel (TR) |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||||
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KSA709YBU | onsemi |
Description: TRANS PNP 150V 0.7A TO92-3Frequency - Transition: 50MHz DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 50mA, 2V Current - Collector Cutoff (Max): 100nA (ICBO) Vce Saturation (Max) @ Ib, Ic: 400mV @ 20mA, 200mA Operating Temperature: 150°C (TJ) Transistor Type: PNP Mounting Type: Through Hole Package / Case: TO-226-3, TO-92-3 (TO-226AA) Packaging: Bulk Power - Max: 800 mW Voltage - Collector Emitter Breakdown (Max): 150 V Current - Collector (Ic) (Max): 700 mA Supplier Device Package: TO-92-3 |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||||
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KSD1021GBU | onsemi |
Description: TRANS NPN 30V 1A TO92SPower - Max: 350 mW Voltage - Collector Emitter Breakdown (Max): 30 V Current - Collector (Ic) (Max): 1 A Part Status: Obsolete Supplier Device Package: TO-92S Frequency - Transition: 130MHz DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 100mA, 1V Current - Collector Cutoff (Max): 100nA (ICBO) Vce Saturation (Max) @ Ib, Ic: 500mV @ 100mA, 1A Operating Temperature: 150°C (TJ) Transistor Type: NPN Mounting Type: Through Hole Package / Case: TO-226-3, TO-92-3 Short Body Packaging: Bulk |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||||
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KSA910YSHTA | onsemi |
Description: TRANS PNP 150V 0.05A TO92-3 Current - Collector (Ic) (Max): 50 mA Part Status: Obsolete Supplier Device Package: TO-92-3 Frequency - Transition: 100MHz DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 10mA, 5V Current - Collector Cutoff (Max): 100nA (ICBO) Vce Saturation (Max) @ Ib, Ic: 800mV @ 1mA, 10mA Transistor Type: PNP Mounting Type: Through Hole Package / Case: TO-226-3, TO-92-3 Long Body (Formed Leads) Packaging: Tape & Box (TB) Power - Max: 800 mW Voltage - Collector Emitter Breakdown (Max): 150 V |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||||
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FJX3904TF | onsemi |
Description: TRANS NPN 40V 0.2A SOT323Power - Max: 350 mW Voltage - Collector Emitter Breakdown (Max): 40 V Current - Collector (Ic) (Max): 200 mA Part Status: Obsolete Supplier Device Package: SOT-323 Frequency - Transition: 300MHz DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 10mA, 1V Vce Saturation (Max) @ Ib, Ic: 300mV @ 5mA, 50mA Operating Temperature: 150°C (TJ) Transistor Type: NPN Mounting Type: Surface Mount Package / Case: SC-70, SOT-323 Packaging: Tape & Reel (TR) |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||||
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KSB810YTA | onsemi |
Description: TRANS PNP 25V 0.7A TO92STransistor Type: PNP Mounting Type: Through Hole Package / Case: TO-226-3, TO-92-3 Short Body Packaging: Tape & Box (TB) Power - Max: 350 mW Voltage - Collector Emitter Breakdown (Max): 25 V Current - Collector (Ic) (Max): 700 mA Supplier Device Package: TO-92S Frequency - Transition: 160MHz DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 100mA, 1V Current - Collector Cutoff (Max): 100nA (ICBO) Vce Saturation (Max) @ Ib, Ic: 400mV @ 70mA, 700mA Operating Temperature: 150°C (TJ) |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||||
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KSD1021GTA | onsemi |
Description: TRANS NPN 30V 1A TO92SPower - Max: 350 mW Voltage - Collector Emitter Breakdown (Max): 30 V Current - Collector (Ic) (Max): 1 A Part Status: Obsolete Supplier Device Package: TO-92S Frequency - Transition: 130MHz DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 100mA, 1V Current - Collector Cutoff (Max): 100nA (ICBO) Vce Saturation (Max) @ Ib, Ic: 500mV @ 100mA, 1A Operating Temperature: 150°C (TJ) Transistor Type: NPN Mounting Type: Through Hole Package / Case: TO-226-3, TO-92-3 Short Body Packaging: Tape & Box (TB) |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||||
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KSD1021YTA | onsemi |
Description: TRANS NPN 30V 1A TO92SPower - Max: 350 mW Voltage - Collector Emitter Breakdown (Max): 30 V Current - Collector (Ic) (Max): 1 A Part Status: Obsolete Supplier Device Package: TO-92S Frequency - Transition: 130MHz DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 100mA, 1V Current - Collector Cutoff (Max): 100nA (ICBO) Vce Saturation (Max) @ Ib, Ic: 500mV @ 100mA, 1A Operating Temperature: 150°C (TJ) Transistor Type: NPN Mounting Type: Through Hole Package / Case: TO-226-3, TO-92-3 Short Body Packaging: Tape & Box (TB) |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||||
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KSA709OBU | onsemi |
Description: TRANS PNP 150V 0.7A TO92-3Power - Max: 800 mW Voltage - Collector Emitter Breakdown (Max): 150 V Current - Collector (Ic) (Max): 700 mA Supplier Device Package: TO-92-3 Frequency - Transition: 50MHz DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 50mA, 2V Current - Collector Cutoff (Max): 100nA (ICBO) Vce Saturation (Max) @ Ib, Ic: 400mV @ 20mA, 200mA Operating Temperature: 150°C (TJ) Transistor Type: PNP Mounting Type: Through Hole Package / Case: TO-226-3, TO-92-3 (TO-226AA) Packaging: Bulk |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||||
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KSA709COTA | onsemi |
Description: TRANS PNP 150V 0.7A TO92-3Package / Case: TO-226-3, TO-92-3 (TO-226AA) Formed Leads Packaging: Tape & Box (TB) Power - Max: 800 mW Voltage - Collector Emitter Breakdown (Max): 150 V Current - Collector (Ic) (Max): 700 mA Supplier Device Package: TO-92-3 Frequency - Transition: 50MHz DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 50mA, 2V Current - Collector Cutoff (Max): 100nA (ICBO) Vce Saturation (Max) @ Ib, Ic: 400mV @ 20mA, 200mA Operating Temperature: 150°C (TJ) Transistor Type: PNP Mounting Type: Through Hole |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||||
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KSA709CYBU | onsemi |
Description: TRANS PNP 150V 0.7A TO92-3Power - Max: 800 mW Voltage - Collector Emitter Breakdown (Max): 150 V Current - Collector (Ic) (Max): 700 mA Supplier Device Package: TO-92-3 Frequency - Transition: 50MHz DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 50mA, 2V Current - Collector Cutoff (Max): 100nA (ICBO) Vce Saturation (Max) @ Ib, Ic: 400mV @ 20mA, 200mA Operating Temperature: 150°C (TJ) Transistor Type: PNP Mounting Type: Through Hole Package / Case: TO-226-3, TO-92-3 (TO-226AA) Packaging: Bulk |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||||
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KSA709CYTA | onsemi |
Description: TRANS PNP 150V 0.7A TO92-3Power - Max: 800 mW Voltage - Collector Emitter Breakdown (Max): 150 V Current - Collector (Ic) (Max): 700 mA Supplier Device Package: TO-92-3 Frequency - Transition: 50MHz DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 50mA, 2V Current - Collector Cutoff (Max): 100nA (ICBO) Vce Saturation (Max) @ Ib, Ic: 400mV @ 20mA, 200mA Operating Temperature: 150°C (TJ) Transistor Type: PNP Mounting Type: Through Hole Package / Case: TO-226-3, TO-92-3 (TO-226AA) Formed Leads Packaging: Tape & Box (TB) |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||||
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KSD1020GBU | onsemi |
Description: TRANS NPN 25V 0.7A TO92SSupplier Device Package: TO-92S Frequency - Transition: 170MHz DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 100mA, 1V Current - Collector Cutoff (Max): 100nA (ICBO) Vce Saturation (Max) @ Ib, Ic: 400mV @ 70mA, 700mA Operating Temperature: 150°C (TJ) Transistor Type: NPN Mounting Type: Through Hole Package / Case: TO-226-3, TO-92-3 Short Body Packaging: Bulk Power - Max: 350 mW Voltage - Collector Emitter Breakdown (Max): 25 V Current - Collector (Ic) (Max): 700 mA |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||||
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KSD1020YTA | onsemi |
Description: TRANS NPN 25V 0.7A TO92SPower - Max: 350 mW Voltage - Collector Emitter Breakdown (Max): 25 V Current - Collector (Ic) (Max): 700 mA Supplier Device Package: TO-92S Frequency - Transition: 170MHz DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 100mA, 1V Current - Collector Cutoff (Max): 100nA (ICBO) Vce Saturation (Max) @ Ib, Ic: 400mV @ 70mA, 700mA Operating Temperature: 150°C (TJ) Transistor Type: NPN Mounting Type: Through Hole Package / Case: TO-226-3, TO-92-3 Short Body Packaging: Tape & Box (TB) |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||||
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KSA709COBU | onsemi |
Description: TRANS PNP 150V 0.7A TO92-3Power - Max: 800 mW Voltage - Collector Emitter Breakdown (Max): 150 V Current - Collector (Ic) (Max): 700 mA Supplier Device Package: TO-92-3 Frequency - Transition: 50MHz DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 50mA, 2V Current - Collector Cutoff (Max): 100nA (ICBO) Vce Saturation (Max) @ Ib, Ic: 400mV @ 20mA, 200mA Operating Temperature: 150°C (TJ) Transistor Type: PNP Mounting Type: Through Hole Package / Case: TO-226-3, TO-92-3 (TO-226AA) Packaging: Bulk |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||||
|
KSD471ACYBU | onsemi |
Description: TRANS NPN 30V 1A TO-92-3Packaging: Bulk Package / Case: TO-226-3, TO-92-3 (TO-226AA) Mounting Type: Through Hole Transistor Type: NPN Operating Temperature: 150°C (TJ) Vce Saturation (Max) @ Ib, Ic: 500mV @ 100mA, 1A Current - Collector Cutoff (Max): 100nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 100mA, 1V Frequency - Transition: 130MHz Supplier Device Package: TO-92-3 Part Status: Active Current - Collector (Ic) (Max): 1 A Voltage - Collector Emitter Breakdown (Max): 30 V Power - Max: 800 mW |
auf Bestellung 9801 Stücke: Lieferzeit 10-14 Tag (e) |
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FJX945YTF | onsemi |
Description: TRANS NPN 50V 0.15A SOT-323Power - Max: 200 mW Voltage - Collector Emitter Breakdown (Max): 50 V Current - Collector (Ic) (Max): 150 mA Supplier Device Package: SOT-323 Frequency - Transition: 300MHz DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 1mA, 6V Current - Collector Cutoff (Max): 100nA (ICBO) Vce Saturation (Max) @ Ib, Ic: 300mV @ 10mA, 100mA Operating Temperature: 150°C (TJ) Transistor Type: NPN Mounting Type: Surface Mount Package / Case: SC-70, SOT-323 Packaging: Tape & Reel (TR) |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 3000 Stücke Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||||
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KSP94BU | onsemi |
Description: TRANS PNP 400V 0.3A TO-92-3Packaging: Bulk Package / Case: TO-226-3, TO-92-3 (TO-226AA) Mounting Type: Through Hole Transistor Type: PNP Operating Temperature: 150°C (TJ) Vce Saturation (Max) @ Ib, Ic: 750mV @ 5mA, 50mA Current - Collector Cutoff (Max): 1µA DC Current Gain (hFE) (Min) @ Ic, Vce: 50 @ 10mA, 10V Supplier Device Package: TO-92-3 Part Status: Obsolete Current - Collector (Ic) (Max): 300 mA Voltage - Collector Emitter Breakdown (Max): 400 V Power - Max: 625 mW |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||||
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KSD471AGTA | onsemi |
Description: TRANS NPN 30V 1A TO-92-3Packaging: Tape & Box (TB) Package / Case: TO-226-3, TO-92-3 (TO-226AA) Formed Leads Mounting Type: Through Hole Transistor Type: NPN Operating Temperature: 150°C (TJ) Vce Saturation (Max) @ Ib, Ic: 500mV @ 100mA, 1A Current - Collector Cutoff (Max): 100nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 100mA, 1V Frequency - Transition: 130MHz Supplier Device Package: TO-92-3 Part Status: Obsolete Current - Collector (Ic) (Max): 1 A Voltage - Collector Emitter Breakdown (Max): 30 V Power - Max: 800 mW |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||||
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KSD471AYTA | onsemi |
Description: TRANS NPN 30V 1A TO-92-3Packaging: Tape & Box (TB) Package / Case: TO-226-3, TO-92-3 (TO-226AA) Formed Leads Mounting Type: Through Hole Transistor Type: NPN Operating Temperature: 150°C (TJ) Vce Saturation (Max) @ Ib, Ic: 500mV @ 100mA, 1A Current - Collector Cutoff (Max): 100nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 100mA, 1V Frequency - Transition: 130MHz Supplier Device Package: TO-92-3 Part Status: Active Current - Collector (Ic) (Max): 1 A Voltage - Collector Emitter Breakdown (Max): 30 V Power - Max: 800 mW |
auf Bestellung 2000 Stücke: Lieferzeit 10-14 Tag (e) |
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KSA709OTA | onsemi |
Description: TRANS PNP 150V 0.7A TO92-3Power - Max: 800 mW Voltage - Collector Emitter Breakdown (Max): 150 V Current - Collector (Ic) (Max): 700 mA Supplier Device Package: TO-92-3 Frequency - Transition: 50MHz DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 50mA, 2V Current - Collector Cutoff (Max): 100nA (ICBO) Vce Saturation (Max) @ Ib, Ic: 400mV @ 20mA, 200mA Operating Temperature: 150°C (TJ) Transistor Type: PNP Mounting Type: Through Hole Package / Case: TO-226-3, TO-92-3 (TO-226AA) Formed Leads Packaging: Tape & Box (TB) |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||||
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FJX3004RTF | onsemi |
Description: TRANS PREBIAS NPN 200MW SOT323Resistor - Emitter Base (R2): 47 kOhms Resistor - Base (R1): 47 kOhms Frequency - Transition: 250 MHz Power - Max: 200 mW Voltage - Collector Emitter Breakdown (Max): 50 V Current - Collector (Ic) (Max): 100 mA Part Status: Obsolete Supplier Device Package: SOT-323 DC Current Gain (hFE) (Min) @ Ic, Vce: 68 @ 5mA, 5V Current - Collector Cutoff (Max): 100nA (ICBO) Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 10mA Transistor Type: NPN - Pre-Biased Mounting Type: Surface Mount Package / Case: SC-70, SOT-323 Packaging: Tape & Reel (TR) |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||||
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FJX3002RTF | onsemi |
Description: TRANS PREBIAS NPN 200MW SOT323 Resistor - Emitter Base (R2): 10 kOhms Resistor - Base (R1): 10 kOhms Frequency - Transition: 250 MHz Power - Max: 200 mW Voltage - Collector Emitter Breakdown (Max): 50 V Current - Collector (Ic) (Max): 100 mA Part Status: Obsolete Supplier Device Package: SOT-323 DC Current Gain (hFE) (Min) @ Ic, Vce: 30 @ 5mA, 5V Current - Collector Cutoff (Max): 100nA (ICBO) Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 10mA Transistor Type: NPN - Pre-Biased Mounting Type: Surface Mount Package / Case: SC-70, SOT-323 Packaging: Tape & Reel (TR) |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||||
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KSD471ACYTA | onsemi |
Description: TRANS NPN 30V 1A TO-92-3Packaging: Tape & Box (TB) Package / Case: TO-226-3, TO-92-3 (TO-226AA) Formed Leads Mounting Type: Through Hole Transistor Type: NPN Operating Temperature: 150°C (TJ) Vce Saturation (Max) @ Ib, Ic: 500mV @ 100mA, 1A Current - Collector Cutoff (Max): 100nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 100mA, 1V Frequency - Transition: 130MHz Supplier Device Package: TO-92-3 Part Status: Active Current - Collector (Ic) (Max): 1 A Voltage - Collector Emitter Breakdown (Max): 30 V Power - Max: 800 mW |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||||
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KSA709CGBU | onsemi |
Description: TRANS PNP 150V 0.7A TO-92-3Packaging: Bulk Package / Case: TO-226-3, TO-92-3 (TO-226AA) Mounting Type: Through Hole Transistor Type: PNP Operating Temperature: 150°C (TJ) Vce Saturation (Max) @ Ib, Ic: 400mV @ 20mA, 200mA Current - Collector Cutoff (Max): 100nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 50mA, 2V Frequency - Transition: 50MHz Supplier Device Package: TO-92-3 Current - Collector (Ic) (Max): 700 mA Voltage - Collector Emitter Breakdown (Max): 150 V Power - Max: 800 mW |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 10000 Stücke Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||||
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FJX4005RTF | onsemi |
Description: TRANS PREBIAS PNP 50V SOT323Packaging: Tape & Reel (TR) Package / Case: SC-70, SOT-323 Mounting Type: Surface Mount Transistor Type: PNP - Pre-Biased Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 10mA Current - Collector Cutoff (Max): 100nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 30 @ 5mA, 5V Supplier Device Package: SOT-323 Current - Collector (Ic) (Max): 100 mA Voltage - Collector Emitter Breakdown (Max): 50 V Power - Max: 200 mW Frequency - Transition: 200 MHz Resistor - Base (R1): 4.7 kOhms Resistor - Emitter Base (R2): 10 kOhms Resistors Included: R1 and R2 |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||||
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KSD261CYTA | onsemi |
Description: TRANS NPN 20V 0.5A TO92-3Power - Max: 500 mW Voltage - Collector Emitter Breakdown (Max): 20 V Current - Collector (Ic) (Max): 500 mA Part Status: Obsolete Supplier Device Package: TO-92-3 DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 100mA, 1V Current - Collector Cutoff (Max): 100nA (ICBO) Vce Saturation (Max) @ Ib, Ic: 400mV @ 50mA, 500mA Operating Temperature: 150°C (TJ) Transistor Type: NPN Mounting Type: Through Hole Package / Case: TO-226-3, TO-92-3 (TO-226AA) Formed Leads Packaging: Tape & Box (TB) |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||||
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KSD261GBU | onsemi |
Description: TRANS NPN 20V 0.5A TO92-3Power - Max: 500 mW Voltage - Collector Emitter Breakdown (Max): 20 V Current - Collector (Ic) (Max): 500 mA Part Status: Obsolete Supplier Device Package: TO-92-3 DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 100mA, 1V Current - Collector Cutoff (Max): 100nA (ICBO) Vce Saturation (Max) @ Ib, Ic: 400mV @ 50mA, 500mA Operating Temperature: 150°C (TJ) Transistor Type: NPN Mounting Type: Through Hole Package / Case: TO-226-3, TO-92-3 (TO-226AA) Formed Leads Packaging: Bulk |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||||
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KSD261CGBU | onsemi |
Description: TRANS NPN 20V 0.5A TO-92 |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||||
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KSD261YBU | onsemi |
Description: TRANS NPN 20V 0.5A TO-92-3Power - Max: 500 mW Voltage - Collector Emitter Breakdown (Max): 20 V Current - Collector (Ic) (Max): 500 mA Supplier Device Package: TO-92-3 DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 100mA, 1V Current - Collector Cutoff (Max): 100nA (ICBO) Vce Saturation (Max) @ Ib, Ic: 400mV @ 50mA, 500mA Operating Temperature: 150°C (TJ) Transistor Type: NPN Mounting Type: Through Hole Package / Case: TO-226-3, TO-92-3 (TO-226AA) Formed Leads Packaging: Bulk |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 10000 Stücke Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||||
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KSP64BU | onsemi |
Description: TRANS PNP DARL 30V 0.5A TO92-3 |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||||
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KSP64TA | onsemi |
Description: TRANS PNP DARL 30V 0.5A TO92-3 |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||||
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FJX3014RTF | onsemi |
Description: TRANS PREBIAS NPN 200MW SOT323 |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||||
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KSP63TA | onsemi |
Description: TRANS PNP DARL 30V 0.5A TO-92-3Power - Max: 625 mW Voltage - Collector Emitter Breakdown (Max): 30 V Current - Collector (Ic) (Max): 500 mA Supplier Device Package: TO-92-3 Frequency - Transition: 125MHz DC Current Gain (hFE) (Min) @ Ic, Vce: 10000 @ 100mA, 5V Current - Collector Cutoff (Max): 100nA (ICBO) Vce Saturation (Max) @ Ib, Ic: 1.5V @ 100µA, 100mA Operating Temperature: 150°C (TJ) Transistor Type: PNP - Darlington Mounting Type: Through Hole Package / Case: TO-226-3, TO-92-3 (TO-226AA) Formed Leads Packaging: Tape & Box (TB) |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 2000 Stücke Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||||
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KSD261GTA | onsemi |
Description: TRANS NPN 20V 0.5A TO92-3Power - Max: 500 mW Voltage - Collector Emitter Breakdown (Max): 20 V Current - Collector (Ic) (Max): 500 mA Part Status: Obsolete Supplier Device Package: TO-92-3 DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 100mA, 1V Current - Collector Cutoff (Max): 100nA (ICBO) Vce Saturation (Max) @ Ib, Ic: 400mV @ 50mA, 500mA Operating Temperature: 150°C (TJ) Transistor Type: NPN Mounting Type: Through Hole Package / Case: TO-226-3, TO-92-3 (TO-226AA) Formed Leads Packaging: Tape & Box (TB) |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||||
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KSD261YTA | onsemi |
Description: TRANS NPN 20V 0.5A TO-92 |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 14000 Stücke Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||||
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KSK596BBU | onsemi |
Description: JFET N-CH 20V 1MA TO92SCurrent - Drain (Idss) @ Vds (Vgs=0): 100 µA @ 5 V Voltage - Cutoff (VGS off) @ Id: 600 mV @ 1 µA Power - Max: 100 mW Part Status: Obsolete Supplier Device Package: TO-92S Current Drain (Id) - Max: 1 mA Voltage - Breakdown (V(BR)GSS): 20 V Input Capacitance (Ciss) (Max) @ Vds: 3.5pF @ 5V FET Type: N-Channel Operating Temperature: 150°C (TJ) Mounting Type: Through Hole Package / Case: TO-226-3, TO-92-3 Short Body Packaging: Bulk |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH |
| KSP92BU |
![]() |
Hersteller: onsemi
Description: TRANS PNP 300V 0.5A TO-92-3
Packaging: Bulk
Package / Case: TO-226-3, TO-92-3 (TO-226AA)
Mounting Type: Through Hole
Transistor Type: PNP
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 500mV @ 2mA, 20mA
Current - Collector Cutoff (Max): 250nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 25 @ 30mA, 10V
Frequency - Transition: 50MHz
Supplier Device Package: TO-92-3
Part Status: Active
Current - Collector (Ic) (Max): 500 mA
Voltage - Collector Emitter Breakdown (Max): 300 V
Power - Max: 625 mW
Description: TRANS PNP 300V 0.5A TO-92-3
Packaging: Bulk
Package / Case: TO-226-3, TO-92-3 (TO-226AA)
Mounting Type: Through Hole
Transistor Type: PNP
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 500mV @ 2mA, 20mA
Current - Collector Cutoff (Max): 250nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 25 @ 30mA, 10V
Frequency - Transition: 50MHz
Supplier Device Package: TO-92-3
Part Status: Active
Current - Collector (Ic) (Max): 500 mA
Voltage - Collector Emitter Breakdown (Max): 300 V
Power - Max: 625 mW
auf Bestellung 32419 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 36+ | 0.49 EUR |
| 58+ | 0.3 EUR |
| 100+ | 0.19 EUR |
| 500+ | 0.14 EUR |
| 1000+ | 0.12 EUR |
| 2000+ | 0.11 EUR |
| 5000+ | 0.096 EUR |
| 10000+ | 0.087 EUR |
| KSA992PTA |
![]() |
Hersteller: onsemi
Description: TRANS PNP 120V 0.05A TO-92-3
Packaging: Tape & Box (TB)
Package / Case: TO-226-3, TO-92-3 (TO-226AA) Formed Leads
Mounting Type: Through Hole
Transistor Type: PNP
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 300mV @ 1mA, 10mA
Current - Collector Cutoff (Max): 1µA
DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 1mA, 6V
Frequency - Transition: 100MHz
Supplier Device Package: TO-92-3
Part Status: Obsolete
Current - Collector (Ic) (Max): 50 mA
Voltage - Collector Emitter Breakdown (Max): 120 V
Power - Max: 500 mW
Description: TRANS PNP 120V 0.05A TO-92-3
Packaging: Tape & Box (TB)
Package / Case: TO-226-3, TO-92-3 (TO-226AA) Formed Leads
Mounting Type: Through Hole
Transistor Type: PNP
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 300mV @ 1mA, 10mA
Current - Collector Cutoff (Max): 1µA
DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 1mA, 6V
Frequency - Transition: 100MHz
Supplier Device Package: TO-92-3
Part Status: Obsolete
Current - Collector (Ic) (Max): 50 mA
Voltage - Collector Emitter Breakdown (Max): 120 V
Power - Max: 500 mW
Produkt ist nicht verfügbar
Mindestbestellmenge: 2000 Stücke
Im Einkaufswagen
Stück im Wert von UAH
| KSP2907ACTA |
![]() |
Hersteller: onsemi
Description: TRANS PNP 60V 0.6A TO-92-3
Packaging: Tape & Box (TB)
Package / Case: TO-226-3, TO-92-3 (TO-226AA) Formed Leads
Mounting Type: Through Hole
Transistor Type: PNP
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 1.6V @ 50mA, 500mA
Current - Collector Cutoff (Max): 10nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 150mA, 10V
Frequency - Transition: 200MHz
Supplier Device Package: TO-92-3
Part Status: Active
Current - Collector (Ic) (Max): 600 mA
Voltage - Collector Emitter Breakdown (Max): 60 V
Power - Max: 625 mW
Description: TRANS PNP 60V 0.6A TO-92-3
Packaging: Tape & Box (TB)
Package / Case: TO-226-3, TO-92-3 (TO-226AA) Formed Leads
Mounting Type: Through Hole
Transistor Type: PNP
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 1.6V @ 50mA, 500mA
Current - Collector Cutoff (Max): 10nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 150mA, 10V
Frequency - Transition: 200MHz
Supplier Device Package: TO-92-3
Part Status: Active
Current - Collector (Ic) (Max): 600 mA
Voltage - Collector Emitter Breakdown (Max): 60 V
Power - Max: 625 mW
auf Bestellung 6000 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 2000+ | 0.1 EUR |
| 4000+ | 0.092 EUR |
| KSA992FTA |
![]() |
Hersteller: onsemi
Description: TRANS PNP 120V 0.05A TO-92-3
Packaging: Tape & Box (TB)
Package / Case: TO-226-3, TO-92-3 (TO-226AA) Formed Leads
Mounting Type: Through Hole
Transistor Type: PNP
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 300mV @ 1mA, 10mA
Current - Collector Cutoff (Max): 1µA
DC Current Gain (hFE) (Min) @ Ic, Vce: 300 @ 1mA, 6V
Frequency - Transition: 100MHz
Supplier Device Package: TO-92-3
Part Status: Active
Current - Collector (Ic) (Max): 50 mA
Voltage - Collector Emitter Breakdown (Max): 120 V
Power - Max: 500 mW
Description: TRANS PNP 120V 0.05A TO-92-3
Packaging: Tape & Box (TB)
Package / Case: TO-226-3, TO-92-3 (TO-226AA) Formed Leads
Mounting Type: Through Hole
Transistor Type: PNP
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 300mV @ 1mA, 10mA
Current - Collector Cutoff (Max): 1µA
DC Current Gain (hFE) (Min) @ Ic, Vce: 300 @ 1mA, 6V
Frequency - Transition: 100MHz
Supplier Device Package: TO-92-3
Part Status: Active
Current - Collector (Ic) (Max): 50 mA
Voltage - Collector Emitter Breakdown (Max): 120 V
Power - Max: 500 mW
auf Bestellung 8000 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 2000+ | 0.11 EUR |
| 4000+ | 0.1 EUR |
| KSP2907ACBU |
![]() |
Hersteller: onsemi
Description: TRANS PNP 60V 0.6A TO-92-3
Packaging: Bulk
Package / Case: TO-226-3, TO-92-3 (TO-226AA)
Mounting Type: Through Hole
Transistor Type: PNP
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 1.6V @ 50mA, 500mA
Current - Collector Cutoff (Max): 10nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 150mA, 10V
Frequency - Transition: 200MHz
Supplier Device Package: TO-92-3
Part Status: Obsolete
Current - Collector (Ic) (Max): 600 mA
Voltage - Collector Emitter Breakdown (Max): 60 V
Power - Max: 625 mW
Description: TRANS PNP 60V 0.6A TO-92-3
Packaging: Bulk
Package / Case: TO-226-3, TO-92-3 (TO-226AA)
Mounting Type: Through Hole
Transistor Type: PNP
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 1.6V @ 50mA, 500mA
Current - Collector Cutoff (Max): 10nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 150mA, 10V
Frequency - Transition: 200MHz
Supplier Device Package: TO-92-3
Part Status: Obsolete
Current - Collector (Ic) (Max): 600 mA
Voltage - Collector Emitter Breakdown (Max): 60 V
Power - Max: 625 mW
Produkt ist nicht verfügbar
Mindestbestellmenge: 10000 Stücke
Im Einkaufswagen
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| KSB564ACGTA |
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Hersteller: onsemi
Description: TRANS PNP 25V 1A TO92-3
Power - Max: 800 mW
Voltage - Collector Emitter Breakdown (Max): 25 V
Current - Collector (Ic) (Max): 1 A
Part Status: Obsolete
Supplier Device Package: TO-92-3
Frequency - Transition: 110MHz
DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 100mA, 1V
Current - Collector Cutoff (Max): 100nA (ICBO)
Vce Saturation (Max) @ Ib, Ic: 500mV @ 100mA, 1A
Operating Temperature: 150°C (TJ)
Transistor Type: PNP
Mounting Type: Through Hole
Package / Case: TO-226-3, TO-92-3 (TO-226AA) Formed Leads
Packaging: Tape & Box (TB)
Description: TRANS PNP 25V 1A TO92-3
Power - Max: 800 mW
Voltage - Collector Emitter Breakdown (Max): 25 V
Current - Collector (Ic) (Max): 1 A
Part Status: Obsolete
Supplier Device Package: TO-92-3
Frequency - Transition: 110MHz
DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 100mA, 1V
Current - Collector Cutoff (Max): 100nA (ICBO)
Vce Saturation (Max) @ Ib, Ic: 500mV @ 100mA, 1A
Operating Temperature: 150°C (TJ)
Transistor Type: PNP
Mounting Type: Through Hole
Package / Case: TO-226-3, TO-92-3 (TO-226AA) Formed Leads
Packaging: Tape & Box (TB)
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| KSB564AOTA |
![]() |
Hersteller: onsemi
Description: TRANS PNP 25V 1A TO92-3
Power - Max: 800 mW
Voltage - Collector Emitter Breakdown (Max): 25 V
Current - Collector (Ic) (Max): 1 A
Part Status: Obsolete
Supplier Device Package: TO-92-3
Frequency - Transition: 110MHz
DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 100mA, 1V
Current - Collector Cutoff (Max): 100nA (ICBO)
Vce Saturation (Max) @ Ib, Ic: 500mV @ 100mA, 1A
Operating Temperature: 150°C (TJ)
Transistor Type: PNP
Mounting Type: Through Hole
Package / Case: TO-226-3, TO-92-3 (TO-226AA) Formed Leads
Packaging: Tape & Box (TB)
Description: TRANS PNP 25V 1A TO92-3
Power - Max: 800 mW
Voltage - Collector Emitter Breakdown (Max): 25 V
Current - Collector (Ic) (Max): 1 A
Part Status: Obsolete
Supplier Device Package: TO-92-3
Frequency - Transition: 110MHz
DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 100mA, 1V
Current - Collector Cutoff (Max): 100nA (ICBO)
Vce Saturation (Max) @ Ib, Ic: 500mV @ 100mA, 1A
Operating Temperature: 150°C (TJ)
Transistor Type: PNP
Mounting Type: Through Hole
Package / Case: TO-226-3, TO-92-3 (TO-226AA) Formed Leads
Packaging: Tape & Box (TB)
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| MMBD1503 |
![]() |
Hersteller: onsemi
Description: DIODE ARR GP 200V 200MA SOT23-3
Current - Reverse Leakage @ Vr: 10 nA @ 180 V
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 200 mA
Voltage - DC Reverse (Vr) (Max): 200 V
Part Status: Obsolete
Operating Temperature - Junction: 150°C (Max)
Supplier Device Package: SOT-23-3
Current - Average Rectified (Io) (per Diode): 200mA
Diode Configuration: 1 Pair Series Connection
Technology: Standard
Speed: Small Signal =< 200mA (Io), Any Speed
Mounting Type: Surface Mount
Package / Case: TO-236-3, SC-59, SOT-23-3
Packaging: Tape & Reel (TR)
Description: DIODE ARR GP 200V 200MA SOT23-3
Current - Reverse Leakage @ Vr: 10 nA @ 180 V
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 200 mA
Voltage - DC Reverse (Vr) (Max): 200 V
Part Status: Obsolete
Operating Temperature - Junction: 150°C (Max)
Supplier Device Package: SOT-23-3
Current - Average Rectified (Io) (per Diode): 200mA
Diode Configuration: 1 Pair Series Connection
Technology: Standard
Speed: Small Signal =< 200mA (Io), Any Speed
Mounting Type: Surface Mount
Package / Case: TO-236-3, SC-59, SOT-23-3
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar
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| KSB564ACOTA |
![]() |
Hersteller: onsemi
Description: TRANS PNP 25V 1A TO92-3
Power - Max: 800 mW
Voltage - Collector Emitter Breakdown (Max): 25 V
Current - Collector (Ic) (Max): 1 A
Part Status: Obsolete
Supplier Device Package: TO-92-3
Frequency - Transition: 110MHz
DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 100mA, 1V
Current - Collector Cutoff (Max): 100nA (ICBO)
Vce Saturation (Max) @ Ib, Ic: 500mV @ 100mA, 1A
Operating Temperature: 150°C (TJ)
Transistor Type: PNP
Mounting Type: Through Hole
Package / Case: TO-226-3, TO-92-3 (TO-226AA) Formed Leads
Packaging: Tape & Box (TB)
Description: TRANS PNP 25V 1A TO92-3
Power - Max: 800 mW
Voltage - Collector Emitter Breakdown (Max): 25 V
Current - Collector (Ic) (Max): 1 A
Part Status: Obsolete
Supplier Device Package: TO-92-3
Frequency - Transition: 110MHz
DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 100mA, 1V
Current - Collector Cutoff (Max): 100nA (ICBO)
Vce Saturation (Max) @ Ib, Ic: 500mV @ 100mA, 1A
Operating Temperature: 150°C (TJ)
Transistor Type: PNP
Mounting Type: Through Hole
Package / Case: TO-226-3, TO-92-3 (TO-226AA) Formed Leads
Packaging: Tape & Box (TB)
Produkt ist nicht verfügbar
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| KSC2331YSHTA |
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Hersteller: onsemi
Description: TRANS NPN 60V 0.7A TO-92-3
Power - Max: 1 W
Voltage - Collector Emitter Breakdown (Max): 60 V
Current - Collector (Ic) (Max): 700 mA
Supplier Device Package: TO-92-3
Frequency - Transition: 50MHz
DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 50mA, 2V
Current - Collector Cutoff (Max): 100nA (ICBO)
Vce Saturation (Max) @ Ib, Ic: 700mV @ 50mA, 500mA
Operating Temperature: 150°C (TJ)
Transistor Type: NPN
Mounting Type: Through Hole
Package / Case: TO-226-3, TO-92-3 Long Body, Formed Leads
Packaging: Tape & Box (TB)
Description: TRANS NPN 60V 0.7A TO-92-3
Power - Max: 1 W
Voltage - Collector Emitter Breakdown (Max): 60 V
Current - Collector (Ic) (Max): 700 mA
Supplier Device Package: TO-92-3
Frequency - Transition: 50MHz
DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 50mA, 2V
Current - Collector Cutoff (Max): 100nA (ICBO)
Vce Saturation (Max) @ Ib, Ic: 700mV @ 50mA, 500mA
Operating Temperature: 150°C (TJ)
Transistor Type: NPN
Mounting Type: Through Hole
Package / Case: TO-226-3, TO-92-3 Long Body, Formed Leads
Packaging: Tape & Box (TB)
Produkt ist nicht verfügbar
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| KSB564AGBU |
![]() |
Hersteller: onsemi
Description: TRANS PNP 25V 1A TO92-3
Power - Max: 800 mW
Voltage - Collector Emitter Breakdown (Max): 25 V
Current - Collector (Ic) (Max): 1 A
Part Status: Obsolete
Supplier Device Package: TO-92-3
Frequency - Transition: 110MHz
DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 100mA, 1V
Current - Collector Cutoff (Max): 100nA (ICBO)
Vce Saturation (Max) @ Ib, Ic: 500mV @ 100mA, 1A
Operating Temperature: 150°C (TJ)
Transistor Type: PNP
Mounting Type: Through Hole
Package / Case: TO-226-3, TO-92-3 (TO-226AA)
Packaging: Bulk
Description: TRANS PNP 25V 1A TO92-3
Power - Max: 800 mW
Voltage - Collector Emitter Breakdown (Max): 25 V
Current - Collector (Ic) (Max): 1 A
Part Status: Obsolete
Supplier Device Package: TO-92-3
Frequency - Transition: 110MHz
DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 100mA, 1V
Current - Collector Cutoff (Max): 100nA (ICBO)
Vce Saturation (Max) @ Ib, Ic: 500mV @ 100mA, 1A
Operating Temperature: 150°C (TJ)
Transistor Type: PNP
Mounting Type: Through Hole
Package / Case: TO-226-3, TO-92-3 (TO-226AA)
Packaging: Bulk
Produkt ist nicht verfügbar
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| KSD1020YBU |
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Hersteller: onsemi
Description: TRANS NPN 25V 0.7A TO92S
Power - Max: 350 mW
Voltage - Collector Emitter Breakdown (Max): 25 V
Current - Collector (Ic) (Max): 700 mA
Supplier Device Package: TO-92S
Frequency - Transition: 170MHz
DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 100mA, 1V
Current - Collector Cutoff (Max): 100nA (ICBO)
Vce Saturation (Max) @ Ib, Ic: 400mV @ 70mA, 700mA
Operating Temperature: 150°C (TJ)
Transistor Type: NPN
Mounting Type: Through Hole
Package / Case: TO-226-3, TO-92-3 Short Body
Packaging: Bulk
Description: TRANS NPN 25V 0.7A TO92S
Power - Max: 350 mW
Voltage - Collector Emitter Breakdown (Max): 25 V
Current - Collector (Ic) (Max): 700 mA
Supplier Device Package: TO-92S
Frequency - Transition: 170MHz
DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 100mA, 1V
Current - Collector Cutoff (Max): 100nA (ICBO)
Vce Saturation (Max) @ Ib, Ic: 400mV @ 70mA, 700mA
Operating Temperature: 150°C (TJ)
Transistor Type: NPN
Mounting Type: Through Hole
Package / Case: TO-226-3, TO-92-3 Short Body
Packaging: Bulk
Produkt ist nicht verfügbar
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| KSD1021YBU |
![]() |
Hersteller: onsemi
Description: TRANS NPN 30V 1A TO92S
Power - Max: 350 mW
Voltage - Collector Emitter Breakdown (Max): 30 V
Current - Collector (Ic) (Max): 1 A
Part Status: Obsolete
Supplier Device Package: TO-92S
Frequency - Transition: 130MHz
DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 100mA, 1V
Current - Collector Cutoff (Max): 100nA (ICBO)
Vce Saturation (Max) @ Ib, Ic: 500mV @ 100mA, 1A
Operating Temperature: 150°C (TJ)
Transistor Type: NPN
Mounting Type: Through Hole
Package / Case: TO-226-3, TO-92-3 Short Body
Packaging: Bulk
Description: TRANS NPN 30V 1A TO92S
Power - Max: 350 mW
Voltage - Collector Emitter Breakdown (Max): 30 V
Current - Collector (Ic) (Max): 1 A
Part Status: Obsolete
Supplier Device Package: TO-92S
Frequency - Transition: 130MHz
DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 100mA, 1V
Current - Collector Cutoff (Max): 100nA (ICBO)
Vce Saturation (Max) @ Ib, Ic: 500mV @ 100mA, 1A
Operating Temperature: 150°C (TJ)
Transistor Type: NPN
Mounting Type: Through Hole
Package / Case: TO-226-3, TO-92-3 Short Body
Packaging: Bulk
Produkt ist nicht verfügbar
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| KSA709GTA |
![]() |
Hersteller: onsemi
Description: TRANS PNP 150V 0.7A TO92-3
Power - Max: 800 mW
Voltage - Collector Emitter Breakdown (Max): 150 V
Current - Collector (Ic) (Max): 700 mA
Supplier Device Package: TO-92-3
Frequency - Transition: 50MHz
DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 50mA, 2V
Current - Collector Cutoff (Max): 100nA (ICBO)
Vce Saturation (Max) @ Ib, Ic: 400mV @ 20mA, 200mA
Operating Temperature: 150°C (TJ)
Transistor Type: PNP
Mounting Type: Through Hole
Package / Case: TO-226-3, TO-92-3 (TO-226AA) Formed Leads
Packaging: Tape & Box (TB)
Description: TRANS PNP 150V 0.7A TO92-3
Power - Max: 800 mW
Voltage - Collector Emitter Breakdown (Max): 150 V
Current - Collector (Ic) (Max): 700 mA
Supplier Device Package: TO-92-3
Frequency - Transition: 50MHz
DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 50mA, 2V
Current - Collector Cutoff (Max): 100nA (ICBO)
Vce Saturation (Max) @ Ib, Ic: 400mV @ 20mA, 200mA
Operating Temperature: 150°C (TJ)
Transistor Type: PNP
Mounting Type: Through Hole
Package / Case: TO-226-3, TO-92-3 (TO-226AA) Formed Leads
Packaging: Tape & Box (TB)
Produkt ist nicht verfügbar
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| KSB564AGTA |
![]() |
Hersteller: onsemi
Description: TRANS PNP 25V 1A TO92-3
Power - Max: 800 mW
Voltage - Collector Emitter Breakdown (Max): 25 V
Current - Collector (Ic) (Max): 1 A
Part Status: Obsolete
Supplier Device Package: TO-92-3
Frequency - Transition: 110MHz
DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 100mA, 1V
Current - Collector Cutoff (Max): 100nA (ICBO)
Vce Saturation (Max) @ Ib, Ic: 500mV @ 100mA, 1A
Operating Temperature: 150°C (TJ)
Transistor Type: PNP
Mounting Type: Through Hole
Package / Case: TO-226-3, TO-92-3 (TO-226AA) Formed Leads
Packaging: Tape & Box (TB)
Description: TRANS PNP 25V 1A TO92-3
Power - Max: 800 mW
Voltage - Collector Emitter Breakdown (Max): 25 V
Current - Collector (Ic) (Max): 1 A
Part Status: Obsolete
Supplier Device Package: TO-92-3
Frequency - Transition: 110MHz
DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 100mA, 1V
Current - Collector Cutoff (Max): 100nA (ICBO)
Vce Saturation (Max) @ Ib, Ic: 500mV @ 100mA, 1A
Operating Temperature: 150°C (TJ)
Transistor Type: PNP
Mounting Type: Through Hole
Package / Case: TO-226-3, TO-92-3 (TO-226AA) Formed Leads
Packaging: Tape & Box (TB)
Produkt ist nicht verfügbar
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| KSB564AYBU |
![]() |
Hersteller: onsemi
Description: TRANS PNP 25V 1A TO92-3
Power - Max: 800 mW
Voltage - Collector Emitter Breakdown (Max): 25 V
Current - Collector (Ic) (Max): 1 A
Part Status: Obsolete
Supplier Device Package: TO-92-3
Frequency - Transition: 110MHz
DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 100mA, 1V
Current - Collector Cutoff (Max): 100nA (ICBO)
Vce Saturation (Max) @ Ib, Ic: 500mV @ 100mA, 1A
Operating Temperature: 150°C (TJ)
Transistor Type: PNP
Mounting Type: Through Hole
Package / Case: TO-226-3, TO-92-3 (TO-226AA)
Packaging: Bulk
Description: TRANS PNP 25V 1A TO92-3
Power - Max: 800 mW
Voltage - Collector Emitter Breakdown (Max): 25 V
Current - Collector (Ic) (Max): 1 A
Part Status: Obsolete
Supplier Device Package: TO-92-3
Frequency - Transition: 110MHz
DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 100mA, 1V
Current - Collector Cutoff (Max): 100nA (ICBO)
Vce Saturation (Max) @ Ib, Ic: 500mV @ 100mA, 1A
Operating Temperature: 150°C (TJ)
Transistor Type: PNP
Mounting Type: Through Hole
Package / Case: TO-226-3, TO-92-3 (TO-226AA)
Packaging: Bulk
Produkt ist nicht verfügbar
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| KSB564AOBU |
![]() |
Hersteller: onsemi
Description: TRANS PNP 25V 1A TO92-3
Power - Max: 800 mW
Voltage - Collector Emitter Breakdown (Max): 25 V
Current - Collector (Ic) (Max): 1 A
Part Status: Obsolete
Supplier Device Package: TO-92-3
Frequency - Transition: 110MHz
DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 100mA, 1V
Current - Collector Cutoff (Max): 100nA (ICBO)
Vce Saturation (Max) @ Ib, Ic: 500mV @ 100mA, 1A
Operating Temperature: 150°C (TJ)
Transistor Type: PNP
Mounting Type: Through Hole
Package / Case: TO-226-3, TO-92-3 (TO-226AA)
Packaging: Bulk
Description: TRANS PNP 25V 1A TO92-3
Power - Max: 800 mW
Voltage - Collector Emitter Breakdown (Max): 25 V
Current - Collector (Ic) (Max): 1 A
Part Status: Obsolete
Supplier Device Package: TO-92-3
Frequency - Transition: 110MHz
DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 100mA, 1V
Current - Collector Cutoff (Max): 100nA (ICBO)
Vce Saturation (Max) @ Ib, Ic: 500mV @ 100mA, 1A
Operating Temperature: 150°C (TJ)
Transistor Type: PNP
Mounting Type: Through Hole
Package / Case: TO-226-3, TO-92-3 (TO-226AA)
Packaging: Bulk
Produkt ist nicht verfügbar
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| MMBD1404A |
![]() |
Hersteller: onsemi
Description: DIODE ARR GP 175V 200MA SOT23-3
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Speed: Small Signal =< 200mA (Io), Any Speed
Reverse Recovery Time (trr): 50 ns
Technology: Standard
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 200mA
Supplier Device Package: SOT-23-3
Operating Temperature - Junction: 150°C (Max)
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 175 V
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 200 mA
Current - Reverse Leakage @ Vr: 100 nA @ 175 V
Description: DIODE ARR GP 175V 200MA SOT23-3
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Speed: Small Signal =< 200mA (Io), Any Speed
Reverse Recovery Time (trr): 50 ns
Technology: Standard
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 200mA
Supplier Device Package: SOT-23-3
Operating Temperature - Junction: 150°C (Max)
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 175 V
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 200 mA
Current - Reverse Leakage @ Vr: 100 nA @ 175 V
Produkt ist nicht verfügbar
Mindestbestellmenge: 3000 Stücke
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Stück im Wert von UAH
| KSD1020GTA |
![]() |
Hersteller: onsemi
Description: TRANS NPN 25V 0.7A TO92S
Transistor Type: NPN
Mounting Type: Through Hole
Package / Case: TO-226-3, TO-92-3 Short Body
Packaging: Tape & Box (TB)
Power - Max: 350 mW
Voltage - Collector Emitter Breakdown (Max): 25 V
Current - Collector (Ic) (Max): 700 mA
Supplier Device Package: TO-92S
Frequency - Transition: 170MHz
DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 100mA, 1V
Current - Collector Cutoff (Max): 100nA (ICBO)
Vce Saturation (Max) @ Ib, Ic: 400mV @ 70mA, 700mA
Operating Temperature: 150°C (TJ)
Description: TRANS NPN 25V 0.7A TO92S
Transistor Type: NPN
Mounting Type: Through Hole
Package / Case: TO-226-3, TO-92-3 Short Body
Packaging: Tape & Box (TB)
Power - Max: 350 mW
Voltage - Collector Emitter Breakdown (Max): 25 V
Current - Collector (Ic) (Max): 700 mA
Supplier Device Package: TO-92S
Frequency - Transition: 170MHz
DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 100mA, 1V
Current - Collector Cutoff (Max): 100nA (ICBO)
Vce Saturation (Max) @ Ib, Ic: 400mV @ 70mA, 700mA
Operating Temperature: 150°C (TJ)
Produkt ist nicht verfügbar
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| KSB564ACOBU |
![]() |
Hersteller: onsemi
Description: TRANS PNP 25V 1A TO92-3
Power - Max: 800 mW
Voltage - Collector Emitter Breakdown (Max): 25 V
Current - Collector (Ic) (Max): 1 A
Part Status: Obsolete
Supplier Device Package: TO-92-3
Frequency - Transition: 110MHz
DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 100mA, 1V
Current - Collector Cutoff (Max): 100nA (ICBO)
Vce Saturation (Max) @ Ib, Ic: 500mV @ 100mA, 1A
Operating Temperature: 150°C (TJ)
Transistor Type: PNP
Mounting Type: Through Hole
Package / Case: TO-226-3, TO-92-3 (TO-226AA)
Packaging: Bulk
Description: TRANS PNP 25V 1A TO92-3
Power - Max: 800 mW
Voltage - Collector Emitter Breakdown (Max): 25 V
Current - Collector (Ic) (Max): 1 A
Part Status: Obsolete
Supplier Device Package: TO-92-3
Frequency - Transition: 110MHz
DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 100mA, 1V
Current - Collector Cutoff (Max): 100nA (ICBO)
Vce Saturation (Max) @ Ib, Ic: 500mV @ 100mA, 1A
Operating Temperature: 150°C (TJ)
Transistor Type: PNP
Mounting Type: Through Hole
Package / Case: TO-226-3, TO-92-3 (TO-226AA)
Packaging: Bulk
Produkt ist nicht verfügbar
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| KSC5019NTA |
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Hersteller: onsemi
Description: TRANS NPN 10V 2A TO-92
Description: TRANS NPN 10V 2A TO-92
Produkt ist nicht verfügbar
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| MMBD1505 |
![]() |
Hersteller: onsemi
Description: DIODE ARRAY GP 200V 200MA SOT233
Current - Reverse Leakage @ Vr: 10 nA @ 180 V
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 200 mA
Voltage - DC Reverse (Vr) (Max): 200 V
Operating Temperature - Junction: 150°C (Max)
Supplier Device Package: SOT-23-3
Current - Average Rectified (Io) (per Diode): 200mA
Diode Configuration: 1 Pair Common Anode
Technology: Standard
Speed: Small Signal =< 200mA (Io), Any Speed
Mounting Type: Surface Mount
Package / Case: TO-236-3, SC-59, SOT-23-3
Packaging: Tape & Reel (TR)
Description: DIODE ARRAY GP 200V 200MA SOT233
Current - Reverse Leakage @ Vr: 10 nA @ 180 V
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 200 mA
Voltage - DC Reverse (Vr) (Max): 200 V
Operating Temperature - Junction: 150°C (Max)
Supplier Device Package: SOT-23-3
Current - Average Rectified (Io) (per Diode): 200mA
Diode Configuration: 1 Pair Common Anode
Technology: Standard
Speed: Small Signal =< 200mA (Io), Any Speed
Mounting Type: Surface Mount
Package / Case: TO-236-3, SC-59, SOT-23-3
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar
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Stück im Wert von UAH
| KSA709CGTA |
![]() |
Hersteller: onsemi
Description: TRANS PNP 150V 0.7A TO92-3
Power - Max: 800 mW
Voltage - Collector Emitter Breakdown (Max): 150 V
Current - Collector (Ic) (Max): 700 mA
Supplier Device Package: TO-92-3
Frequency - Transition: 50MHz
DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 50mA, 2V
Current - Collector Cutoff (Max): 100nA (ICBO)
Vce Saturation (Max) @ Ib, Ic: 400mV @ 20mA, 200mA
Operating Temperature: 150°C (TJ)
Transistor Type: PNP
Mounting Type: Through Hole
Package / Case: TO-226-3, TO-92-3 (TO-226AA) Formed Leads
Packaging: Tape & Box (TB)
Description: TRANS PNP 150V 0.7A TO92-3
Power - Max: 800 mW
Voltage - Collector Emitter Breakdown (Max): 150 V
Current - Collector (Ic) (Max): 700 mA
Supplier Device Package: TO-92-3
Frequency - Transition: 50MHz
DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 50mA, 2V
Current - Collector Cutoff (Max): 100nA (ICBO)
Vce Saturation (Max) @ Ib, Ic: 400mV @ 20mA, 200mA
Operating Temperature: 150°C (TJ)
Transistor Type: PNP
Mounting Type: Through Hole
Package / Case: TO-226-3, TO-92-3 (TO-226AA) Formed Leads
Packaging: Tape & Box (TB)
Produkt ist nicht verfügbar
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| FJX4003RTF |
![]() |
Hersteller: onsemi
Description: TRANS PREBIAS PNP 200MW SOT323
Resistor - Emitter Base (R2): 22 kOhms
Resistor - Base (R1): 22 kOhms
Frequency - Transition: 200 MHz
Power - Max: 200 mW
Voltage - Collector Emitter Breakdown (Max): 50 V
Current - Collector (Ic) (Max): 100 mA
Supplier Device Package: SOT-323
DC Current Gain (hFE) (Min) @ Ic, Vce: 56 @ 5mA, 5V
Current - Collector Cutoff (Max): 100nA (ICBO)
Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 10mA
Transistor Type: PNP - Pre-Biased
Mounting Type: Surface Mount
Package / Case: SC-70, SOT-323
Packaging: Tape & Reel (TR)
Description: TRANS PREBIAS PNP 200MW SOT323
Resistor - Emitter Base (R2): 22 kOhms
Resistor - Base (R1): 22 kOhms
Frequency - Transition: 200 MHz
Power - Max: 200 mW
Voltage - Collector Emitter Breakdown (Max): 50 V
Current - Collector (Ic) (Max): 100 mA
Supplier Device Package: SOT-323
DC Current Gain (hFE) (Min) @ Ic, Vce: 56 @ 5mA, 5V
Current - Collector Cutoff (Max): 100nA (ICBO)
Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 10mA
Transistor Type: PNP - Pre-Biased
Mounting Type: Surface Mount
Package / Case: SC-70, SOT-323
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar
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| KSA709YBU |
![]() |
Hersteller: onsemi
Description: TRANS PNP 150V 0.7A TO92-3
Frequency - Transition: 50MHz
DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 50mA, 2V
Current - Collector Cutoff (Max): 100nA (ICBO)
Vce Saturation (Max) @ Ib, Ic: 400mV @ 20mA, 200mA
Operating Temperature: 150°C (TJ)
Transistor Type: PNP
Mounting Type: Through Hole
Package / Case: TO-226-3, TO-92-3 (TO-226AA)
Packaging: Bulk
Power - Max: 800 mW
Voltage - Collector Emitter Breakdown (Max): 150 V
Current - Collector (Ic) (Max): 700 mA
Supplier Device Package: TO-92-3
Description: TRANS PNP 150V 0.7A TO92-3
Frequency - Transition: 50MHz
DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 50mA, 2V
Current - Collector Cutoff (Max): 100nA (ICBO)
Vce Saturation (Max) @ Ib, Ic: 400mV @ 20mA, 200mA
Operating Temperature: 150°C (TJ)
Transistor Type: PNP
Mounting Type: Through Hole
Package / Case: TO-226-3, TO-92-3 (TO-226AA)
Packaging: Bulk
Power - Max: 800 mW
Voltage - Collector Emitter Breakdown (Max): 150 V
Current - Collector (Ic) (Max): 700 mA
Supplier Device Package: TO-92-3
Produkt ist nicht verfügbar
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Stück im Wert von UAH
| KSD1021GBU |
![]() |
Hersteller: onsemi
Description: TRANS NPN 30V 1A TO92S
Power - Max: 350 mW
Voltage - Collector Emitter Breakdown (Max): 30 V
Current - Collector (Ic) (Max): 1 A
Part Status: Obsolete
Supplier Device Package: TO-92S
Frequency - Transition: 130MHz
DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 100mA, 1V
Current - Collector Cutoff (Max): 100nA (ICBO)
Vce Saturation (Max) @ Ib, Ic: 500mV @ 100mA, 1A
Operating Temperature: 150°C (TJ)
Transistor Type: NPN
Mounting Type: Through Hole
Package / Case: TO-226-3, TO-92-3 Short Body
Packaging: Bulk
Description: TRANS NPN 30V 1A TO92S
Power - Max: 350 mW
Voltage - Collector Emitter Breakdown (Max): 30 V
Current - Collector (Ic) (Max): 1 A
Part Status: Obsolete
Supplier Device Package: TO-92S
Frequency - Transition: 130MHz
DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 100mA, 1V
Current - Collector Cutoff (Max): 100nA (ICBO)
Vce Saturation (Max) @ Ib, Ic: 500mV @ 100mA, 1A
Operating Temperature: 150°C (TJ)
Transistor Type: NPN
Mounting Type: Through Hole
Package / Case: TO-226-3, TO-92-3 Short Body
Packaging: Bulk
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| KSA910YSHTA |
Hersteller: onsemi
Description: TRANS PNP 150V 0.05A TO92-3
Current - Collector (Ic) (Max): 50 mA
Part Status: Obsolete
Supplier Device Package: TO-92-3
Frequency - Transition: 100MHz
DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 10mA, 5V
Current - Collector Cutoff (Max): 100nA (ICBO)
Vce Saturation (Max) @ Ib, Ic: 800mV @ 1mA, 10mA
Transistor Type: PNP
Mounting Type: Through Hole
Package / Case: TO-226-3, TO-92-3 Long Body (Formed Leads)
Packaging: Tape & Box (TB)
Power - Max: 800 mW
Voltage - Collector Emitter Breakdown (Max): 150 V
Description: TRANS PNP 150V 0.05A TO92-3
Current - Collector (Ic) (Max): 50 mA
Part Status: Obsolete
Supplier Device Package: TO-92-3
Frequency - Transition: 100MHz
DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 10mA, 5V
Current - Collector Cutoff (Max): 100nA (ICBO)
Vce Saturation (Max) @ Ib, Ic: 800mV @ 1mA, 10mA
Transistor Type: PNP
Mounting Type: Through Hole
Package / Case: TO-226-3, TO-92-3 Long Body (Formed Leads)
Packaging: Tape & Box (TB)
Power - Max: 800 mW
Voltage - Collector Emitter Breakdown (Max): 150 V
Produkt ist nicht verfügbar
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| FJX3904TF |
![]() |
Hersteller: onsemi
Description: TRANS NPN 40V 0.2A SOT323
Power - Max: 350 mW
Voltage - Collector Emitter Breakdown (Max): 40 V
Current - Collector (Ic) (Max): 200 mA
Part Status: Obsolete
Supplier Device Package: SOT-323
Frequency - Transition: 300MHz
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 10mA, 1V
Vce Saturation (Max) @ Ib, Ic: 300mV @ 5mA, 50mA
Operating Temperature: 150°C (TJ)
Transistor Type: NPN
Mounting Type: Surface Mount
Package / Case: SC-70, SOT-323
Packaging: Tape & Reel (TR)
Description: TRANS NPN 40V 0.2A SOT323
Power - Max: 350 mW
Voltage - Collector Emitter Breakdown (Max): 40 V
Current - Collector (Ic) (Max): 200 mA
Part Status: Obsolete
Supplier Device Package: SOT-323
Frequency - Transition: 300MHz
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 10mA, 1V
Vce Saturation (Max) @ Ib, Ic: 300mV @ 5mA, 50mA
Operating Temperature: 150°C (TJ)
Transistor Type: NPN
Mounting Type: Surface Mount
Package / Case: SC-70, SOT-323
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| KSB810YTA |
![]() |
Hersteller: onsemi
Description: TRANS PNP 25V 0.7A TO92S
Transistor Type: PNP
Mounting Type: Through Hole
Package / Case: TO-226-3, TO-92-3 Short Body
Packaging: Tape & Box (TB)
Power - Max: 350 mW
Voltage - Collector Emitter Breakdown (Max): 25 V
Current - Collector (Ic) (Max): 700 mA
Supplier Device Package: TO-92S
Frequency - Transition: 160MHz
DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 100mA, 1V
Current - Collector Cutoff (Max): 100nA (ICBO)
Vce Saturation (Max) @ Ib, Ic: 400mV @ 70mA, 700mA
Operating Temperature: 150°C (TJ)
Description: TRANS PNP 25V 0.7A TO92S
Transistor Type: PNP
Mounting Type: Through Hole
Package / Case: TO-226-3, TO-92-3 Short Body
Packaging: Tape & Box (TB)
Power - Max: 350 mW
Voltage - Collector Emitter Breakdown (Max): 25 V
Current - Collector (Ic) (Max): 700 mA
Supplier Device Package: TO-92S
Frequency - Transition: 160MHz
DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 100mA, 1V
Current - Collector Cutoff (Max): 100nA (ICBO)
Vce Saturation (Max) @ Ib, Ic: 400mV @ 70mA, 700mA
Operating Temperature: 150°C (TJ)
Produkt ist nicht verfügbar
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Stück im Wert von UAH
| KSD1021GTA |
![]() |
Hersteller: onsemi
Description: TRANS NPN 30V 1A TO92S
Power - Max: 350 mW
Voltage - Collector Emitter Breakdown (Max): 30 V
Current - Collector (Ic) (Max): 1 A
Part Status: Obsolete
Supplier Device Package: TO-92S
Frequency - Transition: 130MHz
DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 100mA, 1V
Current - Collector Cutoff (Max): 100nA (ICBO)
Vce Saturation (Max) @ Ib, Ic: 500mV @ 100mA, 1A
Operating Temperature: 150°C (TJ)
Transistor Type: NPN
Mounting Type: Through Hole
Package / Case: TO-226-3, TO-92-3 Short Body
Packaging: Tape & Box (TB)
Description: TRANS NPN 30V 1A TO92S
Power - Max: 350 mW
Voltage - Collector Emitter Breakdown (Max): 30 V
Current - Collector (Ic) (Max): 1 A
Part Status: Obsolete
Supplier Device Package: TO-92S
Frequency - Transition: 130MHz
DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 100mA, 1V
Current - Collector Cutoff (Max): 100nA (ICBO)
Vce Saturation (Max) @ Ib, Ic: 500mV @ 100mA, 1A
Operating Temperature: 150°C (TJ)
Transistor Type: NPN
Mounting Type: Through Hole
Package / Case: TO-226-3, TO-92-3 Short Body
Packaging: Tape & Box (TB)
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| KSD1021YTA |
![]() |
Hersteller: onsemi
Description: TRANS NPN 30V 1A TO92S
Power - Max: 350 mW
Voltage - Collector Emitter Breakdown (Max): 30 V
Current - Collector (Ic) (Max): 1 A
Part Status: Obsolete
Supplier Device Package: TO-92S
Frequency - Transition: 130MHz
DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 100mA, 1V
Current - Collector Cutoff (Max): 100nA (ICBO)
Vce Saturation (Max) @ Ib, Ic: 500mV @ 100mA, 1A
Operating Temperature: 150°C (TJ)
Transistor Type: NPN
Mounting Type: Through Hole
Package / Case: TO-226-3, TO-92-3 Short Body
Packaging: Tape & Box (TB)
Description: TRANS NPN 30V 1A TO92S
Power - Max: 350 mW
Voltage - Collector Emitter Breakdown (Max): 30 V
Current - Collector (Ic) (Max): 1 A
Part Status: Obsolete
Supplier Device Package: TO-92S
Frequency - Transition: 130MHz
DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 100mA, 1V
Current - Collector Cutoff (Max): 100nA (ICBO)
Vce Saturation (Max) @ Ib, Ic: 500mV @ 100mA, 1A
Operating Temperature: 150°C (TJ)
Transistor Type: NPN
Mounting Type: Through Hole
Package / Case: TO-226-3, TO-92-3 Short Body
Packaging: Tape & Box (TB)
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| KSA709OBU |
![]() |
Hersteller: onsemi
Description: TRANS PNP 150V 0.7A TO92-3
Power - Max: 800 mW
Voltage - Collector Emitter Breakdown (Max): 150 V
Current - Collector (Ic) (Max): 700 mA
Supplier Device Package: TO-92-3
Frequency - Transition: 50MHz
DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 50mA, 2V
Current - Collector Cutoff (Max): 100nA (ICBO)
Vce Saturation (Max) @ Ib, Ic: 400mV @ 20mA, 200mA
Operating Temperature: 150°C (TJ)
Transistor Type: PNP
Mounting Type: Through Hole
Package / Case: TO-226-3, TO-92-3 (TO-226AA)
Packaging: Bulk
Description: TRANS PNP 150V 0.7A TO92-3
Power - Max: 800 mW
Voltage - Collector Emitter Breakdown (Max): 150 V
Current - Collector (Ic) (Max): 700 mA
Supplier Device Package: TO-92-3
Frequency - Transition: 50MHz
DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 50mA, 2V
Current - Collector Cutoff (Max): 100nA (ICBO)
Vce Saturation (Max) @ Ib, Ic: 400mV @ 20mA, 200mA
Operating Temperature: 150°C (TJ)
Transistor Type: PNP
Mounting Type: Through Hole
Package / Case: TO-226-3, TO-92-3 (TO-226AA)
Packaging: Bulk
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| KSA709COTA |
![]() |
Hersteller: onsemi
Description: TRANS PNP 150V 0.7A TO92-3
Package / Case: TO-226-3, TO-92-3 (TO-226AA) Formed Leads
Packaging: Tape & Box (TB)
Power - Max: 800 mW
Voltage - Collector Emitter Breakdown (Max): 150 V
Current - Collector (Ic) (Max): 700 mA
Supplier Device Package: TO-92-3
Frequency - Transition: 50MHz
DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 50mA, 2V
Current - Collector Cutoff (Max): 100nA (ICBO)
Vce Saturation (Max) @ Ib, Ic: 400mV @ 20mA, 200mA
Operating Temperature: 150°C (TJ)
Transistor Type: PNP
Mounting Type: Through Hole
Description: TRANS PNP 150V 0.7A TO92-3
Package / Case: TO-226-3, TO-92-3 (TO-226AA) Formed Leads
Packaging: Tape & Box (TB)
Power - Max: 800 mW
Voltage - Collector Emitter Breakdown (Max): 150 V
Current - Collector (Ic) (Max): 700 mA
Supplier Device Package: TO-92-3
Frequency - Transition: 50MHz
DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 50mA, 2V
Current - Collector Cutoff (Max): 100nA (ICBO)
Vce Saturation (Max) @ Ib, Ic: 400mV @ 20mA, 200mA
Operating Temperature: 150°C (TJ)
Transistor Type: PNP
Mounting Type: Through Hole
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| KSA709CYBU |
![]() |
Hersteller: onsemi
Description: TRANS PNP 150V 0.7A TO92-3
Power - Max: 800 mW
Voltage - Collector Emitter Breakdown (Max): 150 V
Current - Collector (Ic) (Max): 700 mA
Supplier Device Package: TO-92-3
Frequency - Transition: 50MHz
DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 50mA, 2V
Current - Collector Cutoff (Max): 100nA (ICBO)
Vce Saturation (Max) @ Ib, Ic: 400mV @ 20mA, 200mA
Operating Temperature: 150°C (TJ)
Transistor Type: PNP
Mounting Type: Through Hole
Package / Case: TO-226-3, TO-92-3 (TO-226AA)
Packaging: Bulk
Description: TRANS PNP 150V 0.7A TO92-3
Power - Max: 800 mW
Voltage - Collector Emitter Breakdown (Max): 150 V
Current - Collector (Ic) (Max): 700 mA
Supplier Device Package: TO-92-3
Frequency - Transition: 50MHz
DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 50mA, 2V
Current - Collector Cutoff (Max): 100nA (ICBO)
Vce Saturation (Max) @ Ib, Ic: 400mV @ 20mA, 200mA
Operating Temperature: 150°C (TJ)
Transistor Type: PNP
Mounting Type: Through Hole
Package / Case: TO-226-3, TO-92-3 (TO-226AA)
Packaging: Bulk
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| KSA709CYTA |
![]() |
Hersteller: onsemi
Description: TRANS PNP 150V 0.7A TO92-3
Power - Max: 800 mW
Voltage - Collector Emitter Breakdown (Max): 150 V
Current - Collector (Ic) (Max): 700 mA
Supplier Device Package: TO-92-3
Frequency - Transition: 50MHz
DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 50mA, 2V
Current - Collector Cutoff (Max): 100nA (ICBO)
Vce Saturation (Max) @ Ib, Ic: 400mV @ 20mA, 200mA
Operating Temperature: 150°C (TJ)
Transistor Type: PNP
Mounting Type: Through Hole
Package / Case: TO-226-3, TO-92-3 (TO-226AA) Formed Leads
Packaging: Tape & Box (TB)
Description: TRANS PNP 150V 0.7A TO92-3
Power - Max: 800 mW
Voltage - Collector Emitter Breakdown (Max): 150 V
Current - Collector (Ic) (Max): 700 mA
Supplier Device Package: TO-92-3
Frequency - Transition: 50MHz
DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 50mA, 2V
Current - Collector Cutoff (Max): 100nA (ICBO)
Vce Saturation (Max) @ Ib, Ic: 400mV @ 20mA, 200mA
Operating Temperature: 150°C (TJ)
Transistor Type: PNP
Mounting Type: Through Hole
Package / Case: TO-226-3, TO-92-3 (TO-226AA) Formed Leads
Packaging: Tape & Box (TB)
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| KSD1020GBU |
![]() |
Hersteller: onsemi
Description: TRANS NPN 25V 0.7A TO92S
Supplier Device Package: TO-92S
Frequency - Transition: 170MHz
DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 100mA, 1V
Current - Collector Cutoff (Max): 100nA (ICBO)
Vce Saturation (Max) @ Ib, Ic: 400mV @ 70mA, 700mA
Operating Temperature: 150°C (TJ)
Transistor Type: NPN
Mounting Type: Through Hole
Package / Case: TO-226-3, TO-92-3 Short Body
Packaging: Bulk
Power - Max: 350 mW
Voltage - Collector Emitter Breakdown (Max): 25 V
Current - Collector (Ic) (Max): 700 mA
Description: TRANS NPN 25V 0.7A TO92S
Supplier Device Package: TO-92S
Frequency - Transition: 170MHz
DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 100mA, 1V
Current - Collector Cutoff (Max): 100nA (ICBO)
Vce Saturation (Max) @ Ib, Ic: 400mV @ 70mA, 700mA
Operating Temperature: 150°C (TJ)
Transistor Type: NPN
Mounting Type: Through Hole
Package / Case: TO-226-3, TO-92-3 Short Body
Packaging: Bulk
Power - Max: 350 mW
Voltage - Collector Emitter Breakdown (Max): 25 V
Current - Collector (Ic) (Max): 700 mA
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| KSD1020YTA |
![]() |
Hersteller: onsemi
Description: TRANS NPN 25V 0.7A TO92S
Power - Max: 350 mW
Voltage - Collector Emitter Breakdown (Max): 25 V
Current - Collector (Ic) (Max): 700 mA
Supplier Device Package: TO-92S
Frequency - Transition: 170MHz
DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 100mA, 1V
Current - Collector Cutoff (Max): 100nA (ICBO)
Vce Saturation (Max) @ Ib, Ic: 400mV @ 70mA, 700mA
Operating Temperature: 150°C (TJ)
Transistor Type: NPN
Mounting Type: Through Hole
Package / Case: TO-226-3, TO-92-3 Short Body
Packaging: Tape & Box (TB)
Description: TRANS NPN 25V 0.7A TO92S
Power - Max: 350 mW
Voltage - Collector Emitter Breakdown (Max): 25 V
Current - Collector (Ic) (Max): 700 mA
Supplier Device Package: TO-92S
Frequency - Transition: 170MHz
DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 100mA, 1V
Current - Collector Cutoff (Max): 100nA (ICBO)
Vce Saturation (Max) @ Ib, Ic: 400mV @ 70mA, 700mA
Operating Temperature: 150°C (TJ)
Transistor Type: NPN
Mounting Type: Through Hole
Package / Case: TO-226-3, TO-92-3 Short Body
Packaging: Tape & Box (TB)
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| KSA709COBU |
![]() |
Hersteller: onsemi
Description: TRANS PNP 150V 0.7A TO92-3
Power - Max: 800 mW
Voltage - Collector Emitter Breakdown (Max): 150 V
Current - Collector (Ic) (Max): 700 mA
Supplier Device Package: TO-92-3
Frequency - Transition: 50MHz
DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 50mA, 2V
Current - Collector Cutoff (Max): 100nA (ICBO)
Vce Saturation (Max) @ Ib, Ic: 400mV @ 20mA, 200mA
Operating Temperature: 150°C (TJ)
Transistor Type: PNP
Mounting Type: Through Hole
Package / Case: TO-226-3, TO-92-3 (TO-226AA)
Packaging: Bulk
Description: TRANS PNP 150V 0.7A TO92-3
Power - Max: 800 mW
Voltage - Collector Emitter Breakdown (Max): 150 V
Current - Collector (Ic) (Max): 700 mA
Supplier Device Package: TO-92-3
Frequency - Transition: 50MHz
DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 50mA, 2V
Current - Collector Cutoff (Max): 100nA (ICBO)
Vce Saturation (Max) @ Ib, Ic: 400mV @ 20mA, 200mA
Operating Temperature: 150°C (TJ)
Transistor Type: PNP
Mounting Type: Through Hole
Package / Case: TO-226-3, TO-92-3 (TO-226AA)
Packaging: Bulk
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| KSD471ACYBU |
![]() |
Hersteller: onsemi
Description: TRANS NPN 30V 1A TO-92-3
Packaging: Bulk
Package / Case: TO-226-3, TO-92-3 (TO-226AA)
Mounting Type: Through Hole
Transistor Type: NPN
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 500mV @ 100mA, 1A
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 100mA, 1V
Frequency - Transition: 130MHz
Supplier Device Package: TO-92-3
Part Status: Active
Current - Collector (Ic) (Max): 1 A
Voltage - Collector Emitter Breakdown (Max): 30 V
Power - Max: 800 mW
Description: TRANS NPN 30V 1A TO-92-3
Packaging: Bulk
Package / Case: TO-226-3, TO-92-3 (TO-226AA)
Mounting Type: Through Hole
Transistor Type: NPN
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 500mV @ 100mA, 1A
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 100mA, 1V
Frequency - Transition: 130MHz
Supplier Device Package: TO-92-3
Part Status: Active
Current - Collector (Ic) (Max): 1 A
Voltage - Collector Emitter Breakdown (Max): 30 V
Power - Max: 800 mW
auf Bestellung 9801 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 26+ | 0.69 EUR |
| 42+ | 0.42 EUR |
| 100+ | 0.27 EUR |
| 500+ | 0.2 EUR |
| 1000+ | 0.18 EUR |
| 2000+ | 0.16 EUR |
| 5000+ | 0.14 EUR |
| FJX945YTF |
![]() |
Hersteller: onsemi
Description: TRANS NPN 50V 0.15A SOT-323
Power - Max: 200 mW
Voltage - Collector Emitter Breakdown (Max): 50 V
Current - Collector (Ic) (Max): 150 mA
Supplier Device Package: SOT-323
Frequency - Transition: 300MHz
DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 1mA, 6V
Current - Collector Cutoff (Max): 100nA (ICBO)
Vce Saturation (Max) @ Ib, Ic: 300mV @ 10mA, 100mA
Operating Temperature: 150°C (TJ)
Transistor Type: NPN
Mounting Type: Surface Mount
Package / Case: SC-70, SOT-323
Packaging: Tape & Reel (TR)
Description: TRANS NPN 50V 0.15A SOT-323
Power - Max: 200 mW
Voltage - Collector Emitter Breakdown (Max): 50 V
Current - Collector (Ic) (Max): 150 mA
Supplier Device Package: SOT-323
Frequency - Transition: 300MHz
DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 1mA, 6V
Current - Collector Cutoff (Max): 100nA (ICBO)
Vce Saturation (Max) @ Ib, Ic: 300mV @ 10mA, 100mA
Operating Temperature: 150°C (TJ)
Transistor Type: NPN
Mounting Type: Surface Mount
Package / Case: SC-70, SOT-323
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar
Mindestbestellmenge: 3000 Stücke
Im Einkaufswagen
Stück im Wert von UAH
| KSP94BU |
![]() |
Hersteller: onsemi
Description: TRANS PNP 400V 0.3A TO-92-3
Packaging: Bulk
Package / Case: TO-226-3, TO-92-3 (TO-226AA)
Mounting Type: Through Hole
Transistor Type: PNP
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 750mV @ 5mA, 50mA
Current - Collector Cutoff (Max): 1µA
DC Current Gain (hFE) (Min) @ Ic, Vce: 50 @ 10mA, 10V
Supplier Device Package: TO-92-3
Part Status: Obsolete
Current - Collector (Ic) (Max): 300 mA
Voltage - Collector Emitter Breakdown (Max): 400 V
Power - Max: 625 mW
Description: TRANS PNP 400V 0.3A TO-92-3
Packaging: Bulk
Package / Case: TO-226-3, TO-92-3 (TO-226AA)
Mounting Type: Through Hole
Transistor Type: PNP
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 750mV @ 5mA, 50mA
Current - Collector Cutoff (Max): 1µA
DC Current Gain (hFE) (Min) @ Ic, Vce: 50 @ 10mA, 10V
Supplier Device Package: TO-92-3
Part Status: Obsolete
Current - Collector (Ic) (Max): 300 mA
Voltage - Collector Emitter Breakdown (Max): 400 V
Power - Max: 625 mW
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| KSD471AGTA |
![]() |
Hersteller: onsemi
Description: TRANS NPN 30V 1A TO-92-3
Packaging: Tape & Box (TB)
Package / Case: TO-226-3, TO-92-3 (TO-226AA) Formed Leads
Mounting Type: Through Hole
Transistor Type: NPN
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 500mV @ 100mA, 1A
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 100mA, 1V
Frequency - Transition: 130MHz
Supplier Device Package: TO-92-3
Part Status: Obsolete
Current - Collector (Ic) (Max): 1 A
Voltage - Collector Emitter Breakdown (Max): 30 V
Power - Max: 800 mW
Description: TRANS NPN 30V 1A TO-92-3
Packaging: Tape & Box (TB)
Package / Case: TO-226-3, TO-92-3 (TO-226AA) Formed Leads
Mounting Type: Through Hole
Transistor Type: NPN
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 500mV @ 100mA, 1A
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 100mA, 1V
Frequency - Transition: 130MHz
Supplier Device Package: TO-92-3
Part Status: Obsolete
Current - Collector (Ic) (Max): 1 A
Voltage - Collector Emitter Breakdown (Max): 30 V
Power - Max: 800 mW
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| KSD471AYTA |
![]() |
Hersteller: onsemi
Description: TRANS NPN 30V 1A TO-92-3
Packaging: Tape & Box (TB)
Package / Case: TO-226-3, TO-92-3 (TO-226AA) Formed Leads
Mounting Type: Through Hole
Transistor Type: NPN
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 500mV @ 100mA, 1A
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 100mA, 1V
Frequency - Transition: 130MHz
Supplier Device Package: TO-92-3
Part Status: Active
Current - Collector (Ic) (Max): 1 A
Voltage - Collector Emitter Breakdown (Max): 30 V
Power - Max: 800 mW
Description: TRANS NPN 30V 1A TO-92-3
Packaging: Tape & Box (TB)
Package / Case: TO-226-3, TO-92-3 (TO-226AA) Formed Leads
Mounting Type: Through Hole
Transistor Type: NPN
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 500mV @ 100mA, 1A
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 100mA, 1V
Frequency - Transition: 130MHz
Supplier Device Package: TO-92-3
Part Status: Active
Current - Collector (Ic) (Max): 1 A
Voltage - Collector Emitter Breakdown (Max): 30 V
Power - Max: 800 mW
auf Bestellung 2000 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 2000+ | 0.2 EUR |
| KSA709OTA |
![]() |
Hersteller: onsemi
Description: TRANS PNP 150V 0.7A TO92-3
Power - Max: 800 mW
Voltage - Collector Emitter Breakdown (Max): 150 V
Current - Collector (Ic) (Max): 700 mA
Supplier Device Package: TO-92-3
Frequency - Transition: 50MHz
DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 50mA, 2V
Current - Collector Cutoff (Max): 100nA (ICBO)
Vce Saturation (Max) @ Ib, Ic: 400mV @ 20mA, 200mA
Operating Temperature: 150°C (TJ)
Transistor Type: PNP
Mounting Type: Through Hole
Package / Case: TO-226-3, TO-92-3 (TO-226AA) Formed Leads
Packaging: Tape & Box (TB)
Description: TRANS PNP 150V 0.7A TO92-3
Power - Max: 800 mW
Voltage - Collector Emitter Breakdown (Max): 150 V
Current - Collector (Ic) (Max): 700 mA
Supplier Device Package: TO-92-3
Frequency - Transition: 50MHz
DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 50mA, 2V
Current - Collector Cutoff (Max): 100nA (ICBO)
Vce Saturation (Max) @ Ib, Ic: 400mV @ 20mA, 200mA
Operating Temperature: 150°C (TJ)
Transistor Type: PNP
Mounting Type: Through Hole
Package / Case: TO-226-3, TO-92-3 (TO-226AA) Formed Leads
Packaging: Tape & Box (TB)
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| FJX3004RTF |
![]() |
Hersteller: onsemi
Description: TRANS PREBIAS NPN 200MW SOT323
Resistor - Emitter Base (R2): 47 kOhms
Resistor - Base (R1): 47 kOhms
Frequency - Transition: 250 MHz
Power - Max: 200 mW
Voltage - Collector Emitter Breakdown (Max): 50 V
Current - Collector (Ic) (Max): 100 mA
Part Status: Obsolete
Supplier Device Package: SOT-323
DC Current Gain (hFE) (Min) @ Ic, Vce: 68 @ 5mA, 5V
Current - Collector Cutoff (Max): 100nA (ICBO)
Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 10mA
Transistor Type: NPN - Pre-Biased
Mounting Type: Surface Mount
Package / Case: SC-70, SOT-323
Packaging: Tape & Reel (TR)
Description: TRANS PREBIAS NPN 200MW SOT323
Resistor - Emitter Base (R2): 47 kOhms
Resistor - Base (R1): 47 kOhms
Frequency - Transition: 250 MHz
Power - Max: 200 mW
Voltage - Collector Emitter Breakdown (Max): 50 V
Current - Collector (Ic) (Max): 100 mA
Part Status: Obsolete
Supplier Device Package: SOT-323
DC Current Gain (hFE) (Min) @ Ic, Vce: 68 @ 5mA, 5V
Current - Collector Cutoff (Max): 100nA (ICBO)
Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 10mA
Transistor Type: NPN - Pre-Biased
Mounting Type: Surface Mount
Package / Case: SC-70, SOT-323
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| FJX3002RTF |
Hersteller: onsemi
Description: TRANS PREBIAS NPN 200MW SOT323
Resistor - Emitter Base (R2): 10 kOhms
Resistor - Base (R1): 10 kOhms
Frequency - Transition: 250 MHz
Power - Max: 200 mW
Voltage - Collector Emitter Breakdown (Max): 50 V
Current - Collector (Ic) (Max): 100 mA
Part Status: Obsolete
Supplier Device Package: SOT-323
DC Current Gain (hFE) (Min) @ Ic, Vce: 30 @ 5mA, 5V
Current - Collector Cutoff (Max): 100nA (ICBO)
Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 10mA
Transistor Type: NPN - Pre-Biased
Mounting Type: Surface Mount
Package / Case: SC-70, SOT-323
Packaging: Tape & Reel (TR)
Description: TRANS PREBIAS NPN 200MW SOT323
Resistor - Emitter Base (R2): 10 kOhms
Resistor - Base (R1): 10 kOhms
Frequency - Transition: 250 MHz
Power - Max: 200 mW
Voltage - Collector Emitter Breakdown (Max): 50 V
Current - Collector (Ic) (Max): 100 mA
Part Status: Obsolete
Supplier Device Package: SOT-323
DC Current Gain (hFE) (Min) @ Ic, Vce: 30 @ 5mA, 5V
Current - Collector Cutoff (Max): 100nA (ICBO)
Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 10mA
Transistor Type: NPN - Pre-Biased
Mounting Type: Surface Mount
Package / Case: SC-70, SOT-323
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| KSD471ACYTA |
![]() |
Hersteller: onsemi
Description: TRANS NPN 30V 1A TO-92-3
Packaging: Tape & Box (TB)
Package / Case: TO-226-3, TO-92-3 (TO-226AA) Formed Leads
Mounting Type: Through Hole
Transistor Type: NPN
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 500mV @ 100mA, 1A
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 100mA, 1V
Frequency - Transition: 130MHz
Supplier Device Package: TO-92-3
Part Status: Active
Current - Collector (Ic) (Max): 1 A
Voltage - Collector Emitter Breakdown (Max): 30 V
Power - Max: 800 mW
Description: TRANS NPN 30V 1A TO-92-3
Packaging: Tape & Box (TB)
Package / Case: TO-226-3, TO-92-3 (TO-226AA) Formed Leads
Mounting Type: Through Hole
Transistor Type: NPN
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 500mV @ 100mA, 1A
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 100mA, 1V
Frequency - Transition: 130MHz
Supplier Device Package: TO-92-3
Part Status: Active
Current - Collector (Ic) (Max): 1 A
Voltage - Collector Emitter Breakdown (Max): 30 V
Power - Max: 800 mW
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| KSA709CGBU |
![]() |
Hersteller: onsemi
Description: TRANS PNP 150V 0.7A TO-92-3
Packaging: Bulk
Package / Case: TO-226-3, TO-92-3 (TO-226AA)
Mounting Type: Through Hole
Transistor Type: PNP
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 400mV @ 20mA, 200mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 50mA, 2V
Frequency - Transition: 50MHz
Supplier Device Package: TO-92-3
Current - Collector (Ic) (Max): 700 mA
Voltage - Collector Emitter Breakdown (Max): 150 V
Power - Max: 800 mW
Description: TRANS PNP 150V 0.7A TO-92-3
Packaging: Bulk
Package / Case: TO-226-3, TO-92-3 (TO-226AA)
Mounting Type: Through Hole
Transistor Type: PNP
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 400mV @ 20mA, 200mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 50mA, 2V
Frequency - Transition: 50MHz
Supplier Device Package: TO-92-3
Current - Collector (Ic) (Max): 700 mA
Voltage - Collector Emitter Breakdown (Max): 150 V
Power - Max: 800 mW
Produkt ist nicht verfügbar
Mindestbestellmenge: 10000 Stücke
Im Einkaufswagen
Stück im Wert von UAH
| FJX4005RTF |
![]() |
Hersteller: onsemi
Description: TRANS PREBIAS PNP 50V SOT323
Packaging: Tape & Reel (TR)
Package / Case: SC-70, SOT-323
Mounting Type: Surface Mount
Transistor Type: PNP - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 10mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 30 @ 5mA, 5V
Supplier Device Package: SOT-323
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 200 mW
Frequency - Transition: 200 MHz
Resistor - Base (R1): 4.7 kOhms
Resistor - Emitter Base (R2): 10 kOhms
Resistors Included: R1 and R2
Description: TRANS PREBIAS PNP 50V SOT323
Packaging: Tape & Reel (TR)
Package / Case: SC-70, SOT-323
Mounting Type: Surface Mount
Transistor Type: PNP - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 10mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 30 @ 5mA, 5V
Supplier Device Package: SOT-323
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 200 mW
Frequency - Transition: 200 MHz
Resistor - Base (R1): 4.7 kOhms
Resistor - Emitter Base (R2): 10 kOhms
Resistors Included: R1 and R2
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| KSD261CYTA |
![]() |
Hersteller: onsemi
Description: TRANS NPN 20V 0.5A TO92-3
Power - Max: 500 mW
Voltage - Collector Emitter Breakdown (Max): 20 V
Current - Collector (Ic) (Max): 500 mA
Part Status: Obsolete
Supplier Device Package: TO-92-3
DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 100mA, 1V
Current - Collector Cutoff (Max): 100nA (ICBO)
Vce Saturation (Max) @ Ib, Ic: 400mV @ 50mA, 500mA
Operating Temperature: 150°C (TJ)
Transistor Type: NPN
Mounting Type: Through Hole
Package / Case: TO-226-3, TO-92-3 (TO-226AA) Formed Leads
Packaging: Tape & Box (TB)
Description: TRANS NPN 20V 0.5A TO92-3
Power - Max: 500 mW
Voltage - Collector Emitter Breakdown (Max): 20 V
Current - Collector (Ic) (Max): 500 mA
Part Status: Obsolete
Supplier Device Package: TO-92-3
DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 100mA, 1V
Current - Collector Cutoff (Max): 100nA (ICBO)
Vce Saturation (Max) @ Ib, Ic: 400mV @ 50mA, 500mA
Operating Temperature: 150°C (TJ)
Transistor Type: NPN
Mounting Type: Through Hole
Package / Case: TO-226-3, TO-92-3 (TO-226AA) Formed Leads
Packaging: Tape & Box (TB)
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| KSD261GBU |
![]() |
Hersteller: onsemi
Description: TRANS NPN 20V 0.5A TO92-3
Power - Max: 500 mW
Voltage - Collector Emitter Breakdown (Max): 20 V
Current - Collector (Ic) (Max): 500 mA
Part Status: Obsolete
Supplier Device Package: TO-92-3
DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 100mA, 1V
Current - Collector Cutoff (Max): 100nA (ICBO)
Vce Saturation (Max) @ Ib, Ic: 400mV @ 50mA, 500mA
Operating Temperature: 150°C (TJ)
Transistor Type: NPN
Mounting Type: Through Hole
Package / Case: TO-226-3, TO-92-3 (TO-226AA) Formed Leads
Packaging: Bulk
Description: TRANS NPN 20V 0.5A TO92-3
Power - Max: 500 mW
Voltage - Collector Emitter Breakdown (Max): 20 V
Current - Collector (Ic) (Max): 500 mA
Part Status: Obsolete
Supplier Device Package: TO-92-3
DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 100mA, 1V
Current - Collector Cutoff (Max): 100nA (ICBO)
Vce Saturation (Max) @ Ib, Ic: 400mV @ 50mA, 500mA
Operating Temperature: 150°C (TJ)
Transistor Type: NPN
Mounting Type: Through Hole
Package / Case: TO-226-3, TO-92-3 (TO-226AA) Formed Leads
Packaging: Bulk
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| KSD261CGBU |
![]() |
Hersteller: onsemi
Description: TRANS NPN 20V 0.5A TO-92
Description: TRANS NPN 20V 0.5A TO-92
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| KSD261YBU |
![]() |
Hersteller: onsemi
Description: TRANS NPN 20V 0.5A TO-92-3
Power - Max: 500 mW
Voltage - Collector Emitter Breakdown (Max): 20 V
Current - Collector (Ic) (Max): 500 mA
Supplier Device Package: TO-92-3
DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 100mA, 1V
Current - Collector Cutoff (Max): 100nA (ICBO)
Vce Saturation (Max) @ Ib, Ic: 400mV @ 50mA, 500mA
Operating Temperature: 150°C (TJ)
Transistor Type: NPN
Mounting Type: Through Hole
Package / Case: TO-226-3, TO-92-3 (TO-226AA) Formed Leads
Packaging: Bulk
Description: TRANS NPN 20V 0.5A TO-92-3
Power - Max: 500 mW
Voltage - Collector Emitter Breakdown (Max): 20 V
Current - Collector (Ic) (Max): 500 mA
Supplier Device Package: TO-92-3
DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 100mA, 1V
Current - Collector Cutoff (Max): 100nA (ICBO)
Vce Saturation (Max) @ Ib, Ic: 400mV @ 50mA, 500mA
Operating Temperature: 150°C (TJ)
Transistor Type: NPN
Mounting Type: Through Hole
Package / Case: TO-226-3, TO-92-3 (TO-226AA) Formed Leads
Packaging: Bulk
Produkt ist nicht verfügbar
Mindestbestellmenge: 10000 Stücke
Im Einkaufswagen
Stück im Wert von UAH
| KSP64BU |
![]() |
Hersteller: onsemi
Description: TRANS PNP DARL 30V 0.5A TO92-3
Description: TRANS PNP DARL 30V 0.5A TO92-3
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| KSP64TA |
![]() |
Hersteller: onsemi
Description: TRANS PNP DARL 30V 0.5A TO92-3
Description: TRANS PNP DARL 30V 0.5A TO92-3
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| FJX3014RTF |
![]() |
Hersteller: onsemi
Description: TRANS PREBIAS NPN 200MW SOT323
Description: TRANS PREBIAS NPN 200MW SOT323
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| KSP63TA |
![]() |
Hersteller: onsemi
Description: TRANS PNP DARL 30V 0.5A TO-92-3
Power - Max: 625 mW
Voltage - Collector Emitter Breakdown (Max): 30 V
Current - Collector (Ic) (Max): 500 mA
Supplier Device Package: TO-92-3
Frequency - Transition: 125MHz
DC Current Gain (hFE) (Min) @ Ic, Vce: 10000 @ 100mA, 5V
Current - Collector Cutoff (Max): 100nA (ICBO)
Vce Saturation (Max) @ Ib, Ic: 1.5V @ 100µA, 100mA
Operating Temperature: 150°C (TJ)
Transistor Type: PNP - Darlington
Mounting Type: Through Hole
Package / Case: TO-226-3, TO-92-3 (TO-226AA) Formed Leads
Packaging: Tape & Box (TB)
Description: TRANS PNP DARL 30V 0.5A TO-92-3
Power - Max: 625 mW
Voltage - Collector Emitter Breakdown (Max): 30 V
Current - Collector (Ic) (Max): 500 mA
Supplier Device Package: TO-92-3
Frequency - Transition: 125MHz
DC Current Gain (hFE) (Min) @ Ic, Vce: 10000 @ 100mA, 5V
Current - Collector Cutoff (Max): 100nA (ICBO)
Vce Saturation (Max) @ Ib, Ic: 1.5V @ 100µA, 100mA
Operating Temperature: 150°C (TJ)
Transistor Type: PNP - Darlington
Mounting Type: Through Hole
Package / Case: TO-226-3, TO-92-3 (TO-226AA) Formed Leads
Packaging: Tape & Box (TB)
Produkt ist nicht verfügbar
Mindestbestellmenge: 2000 Stücke
Im Einkaufswagen
Stück im Wert von UAH
| KSD261GTA |
![]() |
Hersteller: onsemi
Description: TRANS NPN 20V 0.5A TO92-3
Power - Max: 500 mW
Voltage - Collector Emitter Breakdown (Max): 20 V
Current - Collector (Ic) (Max): 500 mA
Part Status: Obsolete
Supplier Device Package: TO-92-3
DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 100mA, 1V
Current - Collector Cutoff (Max): 100nA (ICBO)
Vce Saturation (Max) @ Ib, Ic: 400mV @ 50mA, 500mA
Operating Temperature: 150°C (TJ)
Transistor Type: NPN
Mounting Type: Through Hole
Package / Case: TO-226-3, TO-92-3 (TO-226AA) Formed Leads
Packaging: Tape & Box (TB)
Description: TRANS NPN 20V 0.5A TO92-3
Power - Max: 500 mW
Voltage - Collector Emitter Breakdown (Max): 20 V
Current - Collector (Ic) (Max): 500 mA
Part Status: Obsolete
Supplier Device Package: TO-92-3
DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 100mA, 1V
Current - Collector Cutoff (Max): 100nA (ICBO)
Vce Saturation (Max) @ Ib, Ic: 400mV @ 50mA, 500mA
Operating Temperature: 150°C (TJ)
Transistor Type: NPN
Mounting Type: Through Hole
Package / Case: TO-226-3, TO-92-3 (TO-226AA) Formed Leads
Packaging: Tape & Box (TB)
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| KSD261YTA |
![]() |
Hersteller: onsemi
Description: TRANS NPN 20V 0.5A TO-92
Description: TRANS NPN 20V 0.5A TO-92
Produkt ist nicht verfügbar
Mindestbestellmenge: 14000 Stücke
Im Einkaufswagen
Stück im Wert von UAH
| KSK596BBU |
![]() |
Hersteller: onsemi
Description: JFET N-CH 20V 1MA TO92S
Current - Drain (Idss) @ Vds (Vgs=0): 100 µA @ 5 V
Voltage - Cutoff (VGS off) @ Id: 600 mV @ 1 µA
Power - Max: 100 mW
Part Status: Obsolete
Supplier Device Package: TO-92S
Current Drain (Id) - Max: 1 mA
Voltage - Breakdown (V(BR)GSS): 20 V
Input Capacitance (Ciss) (Max) @ Vds: 3.5pF @ 5V
FET Type: N-Channel
Operating Temperature: 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-226-3, TO-92-3 Short Body
Packaging: Bulk
Description: JFET N-CH 20V 1MA TO92S
Current - Drain (Idss) @ Vds (Vgs=0): 100 µA @ 5 V
Voltage - Cutoff (VGS off) @ Id: 600 mV @ 1 µA
Power - Max: 100 mW
Part Status: Obsolete
Supplier Device Package: TO-92S
Current Drain (Id) - Max: 1 mA
Voltage - Breakdown (V(BR)GSS): 20 V
Input Capacitance (Ciss) (Max) @ Vds: 3.5pF @ 5V
FET Type: N-Channel
Operating Temperature: 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-226-3, TO-92-3 Short Body
Packaging: Bulk
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH







,TO-226_straightlead.jpg)


,TO-226_straightlead.jpg)


