| Foto | Bezeichnung | Hersteller | Beschreibung |
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2SC5964-TD-H | ONSEMI |
 Category: NPN SMD transistorsDescription: Transistor: NPN; bipolar; 50V; 3A; 3.5W; SOT89 Type of transistor: NPN Polarisation: bipolar Collector-emitter voltage: 50V Collector current: 3A Power dissipation: 3.5W Case: SOT89 Current gain: 200...560 Mounting: SMD Kind of package: reel; tape Frequency: 380MHz |
Produkt ist nicht verfügbar |
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2SB1123S-TD-E | ONSEMI |
Category: PNP SMD transistors Description: Transistor: PNP; bipolar; 50V; 2A; 0.5W; SOT89 Type of transistor: PNP Polarisation: bipolar Collector-emitter voltage: 50V Collector current: 2A Power dissipation: 0.5W Case: SOT89 Current gain: 140...280 Mounting: SMD Kind of package: reel; tape Frequency: 150MHz |
Produkt ist nicht verfügbar |
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2SB1123T-TD-E | ONSEMI |
Category: PNP SMD transistors Description: Transistor: PNP; bipolar; 50V; 2A; 0.5W; SOT89 Type of transistor: PNP Polarisation: bipolar Collector-emitter voltage: 50V Collector current: 2A Power dissipation: 0.5W Case: SOT89 Current gain: 200...400 Mounting: SMD Kind of package: reel; tape Frequency: 150MHz |
Produkt ist nicht verfügbar |
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| RSL10-002GEVB | ONSEMI |
Category: Development kits - others Description: Dev.kit: evaluation; GPIO,I2C,SPI,UART; Bluetooth board Type of development kit: evaluation Kind of connector: pin strips; pin strips; Pmod socket; USB micro Interface: GPIO; I2C; SPI; UART Programmers and development kits features: Bluetooth board Kit contents: prototype board Components: RSL10 |
Produkt ist nicht verfügbar |
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74VHC123AM | ONSEMI |
Category: Multivibrators Description: IC: digital; monostable,multivibrator; Ch: 2; 2÷5.5VDC; SMD; SO16 Operating temperature: -40...85°C Mounting: SMD Manufacturer series: VHC Kind of integrated circuit: monostable; multivibrator Case: SO16 Supply voltage: 2...5.5V DC Type of integrated circuit: digital Number of channels: 2 |
Produkt ist nicht verfügbar |
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74VHC123AMTC | ONSEMI |
Category: Multivibrators Description: IC: digital; monostable,multivibrator; Ch: 2; 2÷5.5VDC; SMD; VHC Operating temperature: -40...85°C Mounting: SMD Manufacturer series: VHC Kind of package: tube Kind of integrated circuit: monostable; multivibrator Case: TSSOP16 Supply voltage: 2...5.5V DC Type of integrated circuit: digital Number of channels: 2 Quiescent current: 40µA |
Produkt ist nicht verfügbar |
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74VHC123AMTCX | ONSEMI |
Category: Multivibrators Description: IC: digital; monostable,multivibrator; Ch: 2; 2÷5.5VDC; SMD; VHC Operating temperature: -40...85°C Mounting: SMD Manufacturer series: VHC Kind of integrated circuit: monostable; multivibrator Case: TSSOP16 Supply voltage: 2...5.5V DC Type of integrated circuit: digital Number of channels: 2 |
Produkt ist nicht verfügbar |
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74VHC123AMX | ONSEMI |
Category: Multivibrators Description: IC: digital; monostable,multivibrator; Ch: 2; 2÷5.5VDC; SMD; SO16 Operating temperature: -40...85°C Mounting: SMD Manufacturer series: VHC Kind of integrated circuit: monostable; multivibrator Case: SO16 Supply voltage: 2...5.5V DC Type of integrated circuit: digital Number of channels: 2 |
Produkt ist nicht verfügbar |
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| NLAS3157MX3TCG | ONSEMI |
Category: Analog multiplexers and switches Description: IC: analog switch; demultiplexer,multiplexer; ULLGA6; reel,tape Type of integrated circuit: analog switch Kind of integrated circuit: demultiplexer; multiplexer Case: ULLGA6 Supply voltage: 1.65...4.5V DC Mounting: SMD Kind of package: reel; tape Kind of output: SPDT |
Produkt ist nicht verfügbar |
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NTJS3157NT1G | ONSEMI |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 20V; 2.3A; 1W; SC70-6,SC88,SOT363 Case: SC70-6; SC88; SOT363 Mounting: SMD Kind of package: reel; tape Drain-source voltage: 20V Drain current: 2.3A On-state resistance: 60mΩ Type of transistor: N-MOSFET Power dissipation: 1W Polarisation: unipolar Kind of channel: enhanced Gate-source voltage: ±8V |
Produkt ist nicht verfügbar |
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| NLASB3157MTR2G | ONSEMI |
Category: Analog multiplexers and switches Description: IC: analog switch; Ch: 1; WDFN6; 1.65÷5.5VDC; reel,tape; OUT: SPDT Type of integrated circuit: analog switch Number of channels: 1 Case: WDFN6 Supply voltage: 1.65...5.5V DC Mounting: SMD Kind of package: reel; tape Operating temperature: -55...125°C Kind of output: SPDT Quiescent current: 10µA Technology: CMOS |
Produkt ist nicht verfügbar |
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NC7SBU3157P6X | ONSEMI |
Category: Analog multiplexers and switches Description: IC: analog switch; demultiplexer,multiplexer; Ch: 1; SC70; 10uA Type of integrated circuit: analog switch Kind of integrated circuit: demultiplexer; multiplexer Number of channels: 1 Case: SC70 Supply voltage: 1.65...5.5V DC Mounting: SMD Kind of package: reel; tape Operating temperature: -40...85°C Kind of output: SPDT Quiescent current: 10µA Technology: CMOS |
Produkt ist nicht verfügbar |
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NLVASB3157DFT2G | ONSEMI |
Category: Analog multiplexers and switches Description: IC: analog switch; demultiplexer,multiplexer; Ch: 1; SC88A Type of integrated circuit: analog switch Kind of integrated circuit: demultiplexer; multiplexer Number of channels: 1 Case: SC88A Supply voltage: 1.65...5.5V DC Mounting: SMD Operating temperature: -55...125°C Kind of output: SPDT Application: automotive industry |
auf Bestellung 970 Stücke: Lieferzeit 14-21 Tag (e) |
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NTR4003NT1G | ONSEMI |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 30V; 0.56A; 0.69W; SOT23 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 30V Drain current: 0.56A Power dissipation: 0.69W Case: SOT23 Gate-source voltage: ±20V On-state resistance: 2Ω Mounting: SMD Gate charge: 1.15nC Kind of package: reel; tape Kind of channel: enhanced |
auf Bestellung 2532 Stücke: Lieferzeit 14-21 Tag (e) |
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MM5Z12VT1G | ONSEMI |
Category: SMD Zener diodes Description: Diode: Zener; 0.5W; 12V; SMD; reel,tape; SOD523; single diode Type of diode: Zener Power dissipation: 0.5W Zener voltage: 12V Kind of package: reel; tape Case: SOD523 Mounting: SMD Tolerance: ±5% Semiconductor structure: single diode |
Produkt ist nicht verfügbar |
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M74VHC1GT125DF1G | ONSEMI |
Category: Buffers, transceivers, drivers Description: IC: digital; buffer,non-inverting; Ch: 1; CMOS; SMD; SC88A; VHC Type of integrated circuit: digital Kind of integrated circuit: buffer; non-inverting Number of channels: 1 Technology: CMOS Mounting: SMD Case: SC88A Manufacturer series: VHC Supply voltage: 2...5.5V DC Operating temperature: -55...125°C Kind of output: 3-state |
Produkt ist nicht verfügbar |
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MBRD650CTT4G | ONSEMI |
Category: SMD Schottky diodes Description: Diode: Schottky rectifying; SMD; 60V; 3Ax2; DPAK; reel,tape Type of diode: Schottky rectifying Mounting: SMD Max. off-state voltage: 60V Load current: 3A x2 Max. load current: 6A Semiconductor structure: common cathode; double Max. forward voltage: 0.85V Case: DPAK Kind of package: reel; tape |
Produkt ist nicht verfügbar |
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MC100EPT22DG | ONSEMI |
Category: Level translators Description: IC: digital; Ch: 2; 3÷3.6VDC; SMD; SO8; -40÷85°C; tube; IN: 4; OUT: 2 Type of integrated circuit: digital Kind of integrated circuit: logic level voltage translator; LVTTL to LVPECL translator Number of channels: 2 Supply voltage: 3...3.6V DC Mounting: SMD Case: SO8 Operating temperature: -40...85°C Kind of package: tube Number of inputs: 4 Number of outputs: 2 Manufacturer series: 100EPT |
Produkt ist nicht verfügbar |
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MC100EPT22DTG | ONSEMI |
Category: Level translators Description: IC: digital; Ch: 2; 3÷3.6VDC; SMD; TSSOP8; -40÷85°C; tube; IN: 4; OUT: 2 Type of integrated circuit: digital Kind of integrated circuit: LVCMOS to LVPECL translator; LVTTL to LVPECL translator Number of channels: 2 Supply voltage: 3...3.6V DC Mounting: SMD Case: TSSOP8 Operating temperature: -40...85°C Kind of package: tube Number of inputs: 4 Number of outputs: 2 Manufacturer series: 100EPT |
Produkt ist nicht verfügbar |
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BAT54HT1G | ONSEMI |
Category: SMD Schottky diodes Description: Diode: Schottky rectifying; SMD; 30V; 0.2A; 5ns; SOD323; reel,tape Type of diode: Schottky rectifying Mounting: SMD Max. off-state voltage: 30V Load current: 0.2A Max. load current: 0.3A Reverse recovery time: 5ns Semiconductor structure: single diode Capacitance: 7.6pF Case: SOD323 Kind of package: reel; tape Max. forward impulse current: 0.6A Power dissipation: 0.2W |
auf Bestellung 1065 Stücke: Lieferzeit 14-21 Tag (e) |
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| HCPL2611M | ONSEMI |
Category: Optocouplers - digital output Description: Optocoupler; THT; Ch: 1; OUT: logic; Uinsul: 5kV; 10Mbps; DIP8 Type of optocoupler: optocoupler Mounting: THT Number of channels: 1 Kind of output: logic Insulation voltage: 5kV Transfer rate: 10Mbps Case: DIP8 Turn-on time: 30ns Turn-off time: 30ns Slew rate: 15kV/μs Max. off-state voltage: 5V Output voltage: -500mV...7V Manufacturer series: HCPL2611M |
Produkt ist nicht verfügbar |
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MBRD660CTT4G | ONSEMI |
Category: SMD Schottky diodes Description: Diode: Schottky rectifying; SMD; 60V; 3Ax2; DPAK; reel,tape Type of diode: Schottky rectifying Mounting: SMD Max. off-state voltage: 60V Load current: 3A x2 Max. load current: 6A Semiconductor structure: common cathode; double Max. forward voltage: 0.85V Case: DPAK Kind of package: reel; tape |
Produkt ist nicht verfügbar |
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MBR735G | ONSEMI |
Category: THT Schottky diodes Description: Diode: Schottky rectifying; THT; 35V; 7.5A; TO220AC; tube Type of diode: Schottky rectifying Mounting: THT Max. off-state voltage: 35V Load current: 7.5A Max. load current: 7.5A Semiconductor structure: single diode Max. forward voltage: 0.57V Case: TO220AC Kind of package: tube Max. forward impulse current: 150A Heatsink thickness: 1.14...1.39mm |
auf Bestellung 8 Stücke: Lieferzeit 14-21 Tag (e) |
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MBR1080G | ONSEMI |
Category: THT Schottky diodes Description: Diode: Schottky rectifying; THT; 80V; 10A; TO220AC; tube Type of diode: Schottky rectifying Mounting: THT Max. off-state voltage: 80V Load current: 10A Max. load current: 20A Semiconductor structure: single diode Max. forward voltage: 0.85V Case: TO220AC Kind of package: tube Max. forward impulse current: 150A Heatsink thickness: 1.14...1.39mm |
Produkt ist nicht verfügbar |
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MBR1100G | ONSEMI |
Category: THT Schottky diodes Description: Diode: Schottky rectifying; THT; 100V; 1A; DO41; bulk; Ufmax: 0.79V Type of diode: Schottky rectifying Mounting: THT Max. off-state voltage: 100V Load current: 1A Max. load current: 2A Semiconductor structure: single diode Case: DO41 Kind of package: bulk Max. forward impulse current: 50A Max. forward voltage: 0.79V |
auf Bestellung 882 Stücke: Lieferzeit 14-21 Tag (e) |
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| MC14518BDWG | ONSEMI |
Category: Counters/dividers Description: IC: digital; BCD,up counter; Ch: 2; IN: 3; CMOS; SMD; SO16WB; 3÷18VDC Type of integrated circuit: digital Kind of integrated circuit: BCD; up counter Number of channels: 2 Number of inputs: 3 Technology: CMOS Mounting: SMD Case: SO16WB Supply voltage: 3...18V DC Kind of package: tube Operating temperature: -55...125°C |
Produkt ist nicht verfügbar |
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| MC14518BDWR2G | ONSEMI |
Category: Counters/dividers Description: IC: digital; BCD,up counter; Ch: 2; IN: 3; CMOS; SMD; SO16WB; 3÷18VDC Type of integrated circuit: digital Kind of integrated circuit: BCD; up counter Number of channels: 2 Number of inputs: 3 Technology: CMOS Mounting: SMD Case: SO16WB Supply voltage: 3...18V DC Kind of package: reel; tape Operating temperature: -55...125°C |
Produkt ist nicht verfügbar |
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BAV74LT1G | ONSEMI |
Category: SMD universal diodes Description: Diode: switching; SMD; 50V; 0.2A; 4ns; SOT23; Ifsm: 500mA; 300mW Mounting: SMD Capacitance: 2pF Max. off-state voltage: 50V Load current: 0.2A Semiconductor structure: common cathode; double Reverse recovery time: 4ns Max. forward impulse current: 0.5A Power dissipation: 0.3W Kind of package: reel; tape Type of diode: switching Case: SOT23 |
auf Bestellung 4150 Stücke: Lieferzeit 14-21 Tag (e) |
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KSD560YTU | ONSEMI |
Category: NPN THT Darlington transistors Description: Transistor: NPN; bipolar; Darlington; 100V; 5A; 1.5W; TO220AB Mounting: THT Case: TO220AB Power dissipation: 1.5W Kind of package: tube Kind of transistor: Darlington Collector-emitter voltage: 100V Collector current: 5A Type of transistor: NPN Polarisation: bipolar |
Produkt ist nicht verfügbar |
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NCV7342D10R2G | ONSEMI |
Category: Interfaces others - integrated circuits Description: IC: interface; transceiver; 4.5÷5.5VDC; SMD; SO8; reel,tape Type of integrated circuit: interface Kind of integrated circuit: transceiver Supply voltage: 4.5...5.5V DC Mounting: SMD Case: SO8 Operating temperature: -40...125°C Kind of package: reel; tape Application: Automotive |
Produkt ist nicht verfügbar |
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NCV7342D13R2G | ONSEMI |
Category: Interfaces others - integrated circuits Description: IC: interface; transceiver; 4.5÷5.5VDC; SMD; SO8; reel,tape Type of integrated circuit: interface Kind of integrated circuit: transceiver Supply voltage: 4.5...5.5V DC Mounting: SMD Case: SO8 Kind of package: reel; tape Application: Automotive |
Produkt ist nicht verfügbar |
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HUF75344G3 | ONSEMI |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 55V; 75A; 285W; TO247 Mounting: THT Case: TO247 Kind of package: tube On-state resistance: 8mΩ Type of transistor: N-MOSFET Polarisation: unipolar Gate charge: 7nC Technology: UltraFET® Kind of channel: enhanced Gate-source voltage: ±20V Power dissipation: 285W Drain-source voltage: 55V Drain current: 75A |
auf Bestellung 293 Stücke: Lieferzeit 14-21 Tag (e) |
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| NCP156AAFCT120280T2G | ONSEMI |
Category: LDO unregulated voltage regulators Description: IC: voltage regulator; LDO,linear,fixed; 1.2V,2.8V; 250÷500mA Manufacturer series: NCP156 Output voltage: 1.2V; 2.8V Output current: 250...500mA Type of integrated circuit: voltage regulator Number of channels: 2 Input voltage: 0.8...3.6V Kind of voltage regulator: fixed; LDO; linear Mounting: SMD Operating temperature: -40...125°C Case: WLCSP6 Tolerance: ±1% |
Produkt ist nicht verfügbar |
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MBRS190T3G | ONSEMI |
Category: SMD Schottky diodes Description: Diode: Schottky rectifying; SMD; 90V; 2A; SMB; reel,tape Type of diode: Schottky rectifying Mounting: SMD Max. off-state voltage: 90V Load current: 2A Semiconductor structure: single diode Max. forward voltage: 0.75V Case: SMB Kind of package: reel; tape |
Produkt ist nicht verfügbar |
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| FDMS7620S | ONSEMI |
Category: Multi channel transistors Description: Transistor: N-MOSFET x2; unipolar; 30/30V; 13/22A; 2.2/2.5W Type of transistor: N-MOSFET x2 Polarisation: unipolar Drain-source voltage: 30/30V Drain current: 13/22A Power dissipation: 2.2/2.5W Case: Power56 Gate-source voltage: ±20/±20V On-state resistance: 30/15.1mΩ Mounting: SMD Gate charge: 11/23nC Kind of package: reel; tape Kind of channel: enhanced |
Produkt ist nicht verfügbar |
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| FDMS9620S | ONSEMI |
Category: Multi channel transistors Description: Transistor: N-MOSFET x2; unipolar; 30/30V; 16/18A; Idm: 60A; 2.5W Type of transistor: N-MOSFET x2 Technology: PowerTrench® Polarisation: unipolar Drain-source voltage: 30/30V Drain current: 16/18A Pulsed drain current: 60A Power dissipation: 2.5W Case: Power56 Gate-source voltage: ±20V On-state resistance: 32/22mΩ Mounting: SMD Gate charge: 14/25nC Kind of package: reel; tape Kind of channel: enhanced |
Produkt ist nicht verfügbar |
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FQA70N10 | ONSEMI |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 100V; 49.5A; 214W; TO3PN Type of transistor: N-MOSFET Technology: QFET® Polarisation: unipolar Drain-source voltage: 100V Drain current: 49.5A Power dissipation: 214W Case: TO3PN Gate-source voltage: ±25V On-state resistance: 23mΩ Mounting: THT Gate charge: 11nC Kind of package: tube Kind of channel: enhanced |
auf Bestellung 120 Stücke: Lieferzeit 14-21 Tag (e) |
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FQB11N40CTM | ONSEMI |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 400V; 6.6A; Idm: 42A; 135W; D2PAK Type of transistor: N-MOSFET Technology: QFET® Polarisation: unipolar Drain-source voltage: 400V Drain current: 6.6A Pulsed drain current: 42A Power dissipation: 135W Case: D2PAK Gate-source voltage: ±30V On-state resistance: 530mΩ Mounting: SMD Gate charge: 35nC Kind of package: reel; tape Kind of channel: enhanced |
Produkt ist nicht verfügbar |
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FQB12P20TM | ONSEMI |
Category: SMD P channel transistors Description: Transistor: P-MOSFET; unipolar; -200V; -7.27A; 120W; D2PAK Type of transistor: P-MOSFET Technology: QFET® Polarisation: unipolar Drain-source voltage: -200V Drain current: -7.27A Power dissipation: 120W Case: D2PAK Gate-source voltage: ±30V On-state resistance: 470mΩ Mounting: SMD Gate charge: 40nC Kind of package: reel; tape Kind of channel: enhanced |
Produkt ist nicht verfügbar |
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FQB19N20CTM | ONSEMI |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 200V; 12.1A; Idm: 76A; 139W; D2PAK Type of transistor: N-MOSFET Technology: QFET® Polarisation: unipolar Drain-source voltage: 200V Drain current: 12.1A Pulsed drain current: 76A Power dissipation: 139W Case: D2PAK Gate-source voltage: ±30V On-state resistance: 0.17Ω Mounting: SMD Gate charge: 53nC Kind of package: reel; tape Kind of channel: enhanced |
Produkt ist nicht verfügbar |
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FQB19N20LTM | ONSEMI |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 200V; 13.3A; Idm: 84A; 140W; D2PAK Type of transistor: N-MOSFET Technology: QFET® Polarisation: unipolar Drain-source voltage: 200V Drain current: 13.3A Pulsed drain current: 84A Power dissipation: 140W Case: D2PAK Gate-source voltage: ±20V On-state resistance: 0.15Ω Mounting: SMD Gate charge: 35nC Kind of package: reel; tape Kind of channel: enhanced |
auf Bestellung 106 Stücke: Lieferzeit 14-21 Tag (e) |
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FQB19N20TM | ONSEMI |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 200V; 12.3A; Idm: 78A; 140W; D2PAK Type of transistor: N-MOSFET Technology: QFET® Polarisation: unipolar Drain-source voltage: 200V Drain current: 12.3A Pulsed drain current: 78A Power dissipation: 140W Case: D2PAK Gate-source voltage: ±30V On-state resistance: 0.15Ω Mounting: SMD Gate charge: 40nC Kind of package: reel; tape Kind of channel: enhanced |
Produkt ist nicht verfügbar |
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FQB1P50TM | ONSEMI |
Category: SMD P channel transistors Description: Transistor: P-MOSFET; unipolar; -500V; -0.95A; 63W; D2PAK Type of transistor: P-MOSFET Technology: QFET® Polarisation: unipolar Drain-source voltage: -500V Drain current: -0.95A Power dissipation: 63W Case: D2PAK Gate-source voltage: ±30V On-state resistance: 10.5Ω Mounting: SMD Gate charge: 14nC Kind of package: reel; tape Kind of channel: enhanced |
auf Bestellung 14 Stücke: Lieferzeit 14-21 Tag (e) |
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FQB22P10TM | ONSEMI |
Category: SMD P channel transistors Description: Transistor: P-MOSFET; unipolar; -100V; -15.6A; 125W; D2PAK Type of transistor: P-MOSFET Technology: QFET® Polarisation: unipolar Drain-source voltage: -100V Drain current: -15.6A Power dissipation: 125W Case: D2PAK Gate-source voltage: ±30V On-state resistance: 0.125Ω Mounting: SMD Gate charge: 50nC Kind of package: reel; tape Kind of channel: enhanced |
Produkt ist nicht verfügbar |
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FQB27P06TM | ONSEMI |
Category: SMD P channel transistors Description: Transistor: P-MOSFET; unipolar; -60V; -19.1A; 120W; D2PAK Type of transistor: P-MOSFET Technology: QFET® Polarisation: unipolar Drain-source voltage: -60V Drain current: -19.1A Power dissipation: 120W Case: D2PAK Gate-source voltage: ±25V On-state resistance: 70mΩ Mounting: SMD Gate charge: 43nC Kind of package: reel; tape Kind of channel: enhanced |
Produkt ist nicht verfügbar |
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FQB34N20LTM | ONSEMI |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 200V; 20A; 180W; D2PAK Type of transistor: N-MOSFET Technology: QFET® Polarisation: unipolar Drain-source voltage: 200V Drain current: 20A Power dissipation: 180W Case: D2PAK Gate-source voltage: ±20V On-state resistance: 80mΩ Mounting: SMD Gate charge: 72nC Kind of package: reel; tape Kind of channel: enhanced |
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FQB34N20TM-AM002 | ONSEMI |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 200V; 20A; Idm: 124A; 180W; D2PAK Type of transistor: N-MOSFET Technology: QFET® Polarisation: unipolar Drain-source voltage: 200V Drain current: 20A Pulsed drain current: 124A Power dissipation: 180W Case: D2PAK Gate-source voltage: ±30V On-state resistance: 75mΩ Mounting: SMD Gate charge: 78nC Kind of package: reel; tape Kind of channel: enhanced |
Produkt ist nicht verfügbar |
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FQB34P10TM | ONSEMI |
Category: SMD P channel transistors Description: Transistor: P-MOSFET; unipolar; -100V; -23.5A; 155W; D2PAK Type of transistor: P-MOSFET Technology: QFET® Polarisation: unipolar Drain-source voltage: -100V Drain current: -23.5A Power dissipation: 155W Case: D2PAK Gate-source voltage: ±25V On-state resistance: 60mΩ Mounting: SMD Gate charge: 110nC Kind of package: reel; tape Kind of channel: enhanced |
Produkt ist nicht verfügbar |
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FQB34P10TM-F085 | ONSEMI |
Category: SMD P channel transistors Description: Transistor: P-MOSFET; unipolar; -100V; -23.5A; Idm: -134A; 155W Type of transistor: P-MOSFET Technology: QFET® Polarisation: unipolar Drain-source voltage: -100V Drain current: -23.5A Pulsed drain current: -134A Power dissipation: 155W Case: D2PAK Gate-source voltage: ±25V On-state resistance: 60mΩ Mounting: SMD Gate charge: 110nC Kind of package: reel; tape Kind of channel: enhanced Application: automotive industry |
Produkt ist nicht verfügbar |
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| FQB44N10TM | ONSEMI |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 100V; 30.8A; 146W; D2PAK Type of transistor: N-MOSFET Technology: QFET® Polarisation: unipolar Drain-source voltage: 100V Drain current: 30.8A Power dissipation: 146W Case: D2PAK Gate-source voltage: ±25V On-state resistance: 39mΩ Mounting: SMD Kind of package: reel; tape Kind of channel: enhanced |
Produkt ist nicht verfügbar |
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| PCA9535ECMTTXG | ONSEMI |
Category: Interfaces others - integrated circuits Description: IC: interface; I/O expander; 1.65÷5.5VDC; I2C,SMBus; SMD; WQFN24 Supply voltage: 1.65...5.5V DC Operating temperature: -55...125°C Interface: I2C; SMBus Kind of package: reel; tape Application: for LED applications Mounting: SMD Frequency: 1MHz Type of integrated circuit: interface Kind of integrated circuit: I/O expander Number of channels: 16 Case: WQFN24 Integrated circuit features: PWM |
Produkt ist nicht verfügbar |
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| PCA9535EDWR2G | ONSEMI |
Category: Interfaces others - integrated circuits Description: IC: interface; I/O expander; 1.65÷5.5VDC; I2C,SMBus; SMD; SO24 Supply voltage: 1.65...5.5V DC Operating temperature: -55...125°C Interface: I2C; SMBus Kind of package: reel; tape Application: for LED applications Mounting: SMD Frequency: 1MHz Type of integrated circuit: interface Kind of integrated circuit: I/O expander Number of channels: 16 Case: SO24 Integrated circuit features: PWM |
Produkt ist nicht verfügbar |
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NCV7344AD10R2G | ONSEMI |
Category: Interfaces others - integrated circuits Description: IC: interface; transceiver; 4.75÷5.25VDC; SMD; SO8; reel,tape Supply voltage: 4.75...5.25V DC Operating temperature: -40...150°C Kind of package: reel; tape Application: Automotive Type of integrated circuit: interface Case: SO8 Kind of integrated circuit: transceiver Mounting: SMD |
Produkt ist nicht verfügbar |
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NCV7344D10R2G | ONSEMI |
Category: Interfaces others - integrated circuits Description: IC: interface; transceiver; 4.75÷5.25VDC; SMD; SO8; reel,tape Supply voltage: 4.75...5.25V DC Operating temperature: -40...150°C Kind of package: reel; tape Application: Automotive Type of integrated circuit: interface Case: SO8 Kind of integrated circuit: transceiver Mounting: SMD |
Produkt ist nicht verfügbar |
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NCV7344D13R2G | ONSEMI |
Category: Interfaces others - integrated circuits Description: IC: interface; transceiver; 4.75÷5.25VDC; SMD; SO8; reel,tape Supply voltage: 4.75...5.25V DC Operating temperature: -40...150°C Kind of package: reel; tape Application: Automotive Type of integrated circuit: interface Case: SO8 Kind of integrated circuit: transceiver Mounting: SMD |
Produkt ist nicht verfügbar |
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FXL4TD245BQX | ONSEMI |
Category: Level translators Description: IC: digital; Ch: 4; 1.1÷3.6VDC; SMD; DQFN16; -40÷85°C; reel,tape Type of integrated circuit: digital Kind of integrated circuit: 3-state; bidirectional; logic level voltage translator; non-inverting Mounting: SMD Case: DQFN16 Supply voltage: 1.1...3.6V DC Operating temperature: -40...85°C Number of channels: 4 Number of inputs: 4 Number of outputs: 4 Kind of package: reel; tape |
Produkt ist nicht verfügbar |
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| 74AUP1T97FHX | ONSEMI |
Category: Gates, inverters Description: IC: digital; buffer,inverter,Schmitt trigger,translator; Ch: 1 Type of integrated circuit: digital Kind of integrated circuit: buffer; inverter; Schmitt trigger; translator Kind of gate: AND; configurable; multiple-function; NAND; NOR; OR Number of channels: 1 Number of inputs: 3 Technology: CMOS Mounting: SMD Case: uDFN6 Manufacturer series: AUP Supply voltage: 0.8...3.6V DC Operating temperature: -40...85°C Kind of package: reel; tape Kind of input: with Schmitt trigger Family: AUP |
Produkt ist nicht verfügbar |
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| 74AUP1T97L6X | ONSEMI |
Category: Gates, inverters Description: IC: digital; buffer,inverter,Schmitt trigger,translator; Ch: 1 Type of integrated circuit: digital Kind of integrated circuit: buffer; inverter; Schmitt trigger; translator Kind of gate: AND; configurable; multiple-function; NAND; NOR; OR Number of channels: 1 Number of inputs: 3 Technology: CMOS Mounting: SMD Case: SIP6 Manufacturer series: AUP Supply voltage: 0.8...3.6V DC Operating temperature: -40...85°C Kind of package: reel; tape Kind of input: with Schmitt trigger Family: AUP |
Produkt ist nicht verfügbar |
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FL7760AM6X | ONSEMI |
Category: Voltage regulators - PWM circuits Description: IC: PMIC; DC/DC converter,LED driver; Uin: 8÷70V; -2.5÷1.5A; Ch: 1 Type of integrated circuit: PMIC Kind of integrated circuit: DC/DC converter; LED driver Input voltage: 8...70V Output current: -2.5...1.5A Case: SOT23-6 Mounting: SMD Frequency: 1MHz Topology: buck Number of channels: 1 Kind of package: reel; tape Integrated circuit features: linear dimming; PWM Application: for LED applications |
Produkt ist nicht verfügbar |
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MMSZ6V8T1G | ONSEMI |
Category: SMD Zener diodes Description: Diode: Zener; 0.5W; 6.8V; SMD; reel,tape; SOD123; single diode Type of diode: Zener Power dissipation: 0.5W Zener voltage: 6.8V Mounting: SMD Tolerance: ±5% Kind of package: reel; tape Case: SOD123 Semiconductor structure: single diode |
auf Bestellung 4822 Stücke: Lieferzeit 14-21 Tag (e) |
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| 2SC5964-TD-H |
|
Hersteller: ONSEMI
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 50V; 3A; 3.5W; SOT89
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 50V
Collector current: 3A
Power dissipation: 3.5W
Case: SOT89
Current gain: 200...560
Mounting: SMD
Kind of package: reel; tape
Frequency: 380MHz
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 50V; 3A; 3.5W; SOT89
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 50V
Collector current: 3A
Power dissipation: 3.5W
Case: SOT89
Current gain: 200...560
Mounting: SMD
Kind of package: reel; tape
Frequency: 380MHz
Produkt ist nicht verfügbar
| 2SB1123S-TD-E |
Hersteller: ONSEMI
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 50V; 2A; 0.5W; SOT89
Type of transistor: PNP
Polarisation: bipolar
Collector-emitter voltage: 50V
Collector current: 2A
Power dissipation: 0.5W
Case: SOT89
Current gain: 140...280
Mounting: SMD
Kind of package: reel; tape
Frequency: 150MHz
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 50V; 2A; 0.5W; SOT89
Type of transistor: PNP
Polarisation: bipolar
Collector-emitter voltage: 50V
Collector current: 2A
Power dissipation: 0.5W
Case: SOT89
Current gain: 140...280
Mounting: SMD
Kind of package: reel; tape
Frequency: 150MHz
Produkt ist nicht verfügbar
| 2SB1123T-TD-E |
|
Hersteller: ONSEMI
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 50V; 2A; 0.5W; SOT89
Type of transistor: PNP
Polarisation: bipolar
Collector-emitter voltage: 50V
Collector current: 2A
Power dissipation: 0.5W
Case: SOT89
Current gain: 200...400
Mounting: SMD
Kind of package: reel; tape
Frequency: 150MHz
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 50V; 2A; 0.5W; SOT89
Type of transistor: PNP
Polarisation: bipolar
Collector-emitter voltage: 50V
Collector current: 2A
Power dissipation: 0.5W
Case: SOT89
Current gain: 200...400
Mounting: SMD
Kind of package: reel; tape
Frequency: 150MHz
Produkt ist nicht verfügbar
| RSL10-002GEVB |
|
Hersteller: ONSEMI
Category: Development kits - others
Description: Dev.kit: evaluation; GPIO,I2C,SPI,UART; Bluetooth board
Type of development kit: evaluation
Kind of connector: pin strips; pin strips; Pmod socket; USB micro
Interface: GPIO; I2C; SPI; UART
Programmers and development kits features: Bluetooth board
Kit contents: prototype board
Components: RSL10
Category: Development kits - others
Description: Dev.kit: evaluation; GPIO,I2C,SPI,UART; Bluetooth board
Type of development kit: evaluation
Kind of connector: pin strips; pin strips; Pmod socket; USB micro
Interface: GPIO; I2C; SPI; UART
Programmers and development kits features: Bluetooth board
Kit contents: prototype board
Components: RSL10
Produkt ist nicht verfügbar
| 74VHC123AM |
|
Hersteller: ONSEMI
Category: Multivibrators
Description: IC: digital; monostable,multivibrator; Ch: 2; 2÷5.5VDC; SMD; SO16
Operating temperature: -40...85°C
Mounting: SMD
Manufacturer series: VHC
Kind of integrated circuit: monostable; multivibrator
Case: SO16
Supply voltage: 2...5.5V DC
Type of integrated circuit: digital
Number of channels: 2
Category: Multivibrators
Description: IC: digital; monostable,multivibrator; Ch: 2; 2÷5.5VDC; SMD; SO16
Operating temperature: -40...85°C
Mounting: SMD
Manufacturer series: VHC
Kind of integrated circuit: monostable; multivibrator
Case: SO16
Supply voltage: 2...5.5V DC
Type of integrated circuit: digital
Number of channels: 2
Produkt ist nicht verfügbar
| 74VHC123AMTC |
|
Hersteller: ONSEMI
Category: Multivibrators
Description: IC: digital; monostable,multivibrator; Ch: 2; 2÷5.5VDC; SMD; VHC
Operating temperature: -40...85°C
Mounting: SMD
Manufacturer series: VHC
Kind of package: tube
Kind of integrated circuit: monostable; multivibrator
Case: TSSOP16
Supply voltage: 2...5.5V DC
Type of integrated circuit: digital
Number of channels: 2
Quiescent current: 40µA
Category: Multivibrators
Description: IC: digital; monostable,multivibrator; Ch: 2; 2÷5.5VDC; SMD; VHC
Operating temperature: -40...85°C
Mounting: SMD
Manufacturer series: VHC
Kind of package: tube
Kind of integrated circuit: monostable; multivibrator
Case: TSSOP16
Supply voltage: 2...5.5V DC
Type of integrated circuit: digital
Number of channels: 2
Quiescent current: 40µA
Produkt ist nicht verfügbar
| 74VHC123AMTCX |
|
Hersteller: ONSEMI
Category: Multivibrators
Description: IC: digital; monostable,multivibrator; Ch: 2; 2÷5.5VDC; SMD; VHC
Operating temperature: -40...85°C
Mounting: SMD
Manufacturer series: VHC
Kind of integrated circuit: monostable; multivibrator
Case: TSSOP16
Supply voltage: 2...5.5V DC
Type of integrated circuit: digital
Number of channels: 2
Category: Multivibrators
Description: IC: digital; monostable,multivibrator; Ch: 2; 2÷5.5VDC; SMD; VHC
Operating temperature: -40...85°C
Mounting: SMD
Manufacturer series: VHC
Kind of integrated circuit: monostable; multivibrator
Case: TSSOP16
Supply voltage: 2...5.5V DC
Type of integrated circuit: digital
Number of channels: 2
Produkt ist nicht verfügbar
| 74VHC123AMX |
|
Hersteller: ONSEMI
Category: Multivibrators
Description: IC: digital; monostable,multivibrator; Ch: 2; 2÷5.5VDC; SMD; SO16
Operating temperature: -40...85°C
Mounting: SMD
Manufacturer series: VHC
Kind of integrated circuit: monostable; multivibrator
Case: SO16
Supply voltage: 2...5.5V DC
Type of integrated circuit: digital
Number of channels: 2
Category: Multivibrators
Description: IC: digital; monostable,multivibrator; Ch: 2; 2÷5.5VDC; SMD; SO16
Operating temperature: -40...85°C
Mounting: SMD
Manufacturer series: VHC
Kind of integrated circuit: monostable; multivibrator
Case: SO16
Supply voltage: 2...5.5V DC
Type of integrated circuit: digital
Number of channels: 2
Produkt ist nicht verfügbar
| NLAS3157MX3TCG |
|
Hersteller: ONSEMI
Category: Analog multiplexers and switches
Description: IC: analog switch; demultiplexer,multiplexer; ULLGA6; reel,tape
Type of integrated circuit: analog switch
Kind of integrated circuit: demultiplexer; multiplexer
Case: ULLGA6
Supply voltage: 1.65...4.5V DC
Mounting: SMD
Kind of package: reel; tape
Kind of output: SPDT
Category: Analog multiplexers and switches
Description: IC: analog switch; demultiplexer,multiplexer; ULLGA6; reel,tape
Type of integrated circuit: analog switch
Kind of integrated circuit: demultiplexer; multiplexer
Case: ULLGA6
Supply voltage: 1.65...4.5V DC
Mounting: SMD
Kind of package: reel; tape
Kind of output: SPDT
Produkt ist nicht verfügbar
| NTJS3157NT1G |
|
Hersteller: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 20V; 2.3A; 1W; SC70-6,SC88,SOT363
Case: SC70-6; SC88; SOT363
Mounting: SMD
Kind of package: reel; tape
Drain-source voltage: 20V
Drain current: 2.3A
On-state resistance: 60mΩ
Type of transistor: N-MOSFET
Power dissipation: 1W
Polarisation: unipolar
Kind of channel: enhanced
Gate-source voltage: ±8V
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 20V; 2.3A; 1W; SC70-6,SC88,SOT363
Case: SC70-6; SC88; SOT363
Mounting: SMD
Kind of package: reel; tape
Drain-source voltage: 20V
Drain current: 2.3A
On-state resistance: 60mΩ
Type of transistor: N-MOSFET
Power dissipation: 1W
Polarisation: unipolar
Kind of channel: enhanced
Gate-source voltage: ±8V
Produkt ist nicht verfügbar
| NLASB3157MTR2G |
|
Hersteller: ONSEMI
Category: Analog multiplexers and switches
Description: IC: analog switch; Ch: 1; WDFN6; 1.65÷5.5VDC; reel,tape; OUT: SPDT
Type of integrated circuit: analog switch
Number of channels: 1
Case: WDFN6
Supply voltage: 1.65...5.5V DC
Mounting: SMD
Kind of package: reel; tape
Operating temperature: -55...125°C
Kind of output: SPDT
Quiescent current: 10µA
Technology: CMOS
Category: Analog multiplexers and switches
Description: IC: analog switch; Ch: 1; WDFN6; 1.65÷5.5VDC; reel,tape; OUT: SPDT
Type of integrated circuit: analog switch
Number of channels: 1
Case: WDFN6
Supply voltage: 1.65...5.5V DC
Mounting: SMD
Kind of package: reel; tape
Operating temperature: -55...125°C
Kind of output: SPDT
Quiescent current: 10µA
Technology: CMOS
Produkt ist nicht verfügbar
| NC7SBU3157P6X |
|
Hersteller: ONSEMI
Category: Analog multiplexers and switches
Description: IC: analog switch; demultiplexer,multiplexer; Ch: 1; SC70; 10uA
Type of integrated circuit: analog switch
Kind of integrated circuit: demultiplexer; multiplexer
Number of channels: 1
Case: SC70
Supply voltage: 1.65...5.5V DC
Mounting: SMD
Kind of package: reel; tape
Operating temperature: -40...85°C
Kind of output: SPDT
Quiescent current: 10µA
Technology: CMOS
Category: Analog multiplexers and switches
Description: IC: analog switch; demultiplexer,multiplexer; Ch: 1; SC70; 10uA
Type of integrated circuit: analog switch
Kind of integrated circuit: demultiplexer; multiplexer
Number of channels: 1
Case: SC70
Supply voltage: 1.65...5.5V DC
Mounting: SMD
Kind of package: reel; tape
Operating temperature: -40...85°C
Kind of output: SPDT
Quiescent current: 10µA
Technology: CMOS
Produkt ist nicht verfügbar
| NLVASB3157DFT2G |
|
Hersteller: ONSEMI
Category: Analog multiplexers and switches
Description: IC: analog switch; demultiplexer,multiplexer; Ch: 1; SC88A
Type of integrated circuit: analog switch
Kind of integrated circuit: demultiplexer; multiplexer
Number of channels: 1
Case: SC88A
Supply voltage: 1.65...5.5V DC
Mounting: SMD
Operating temperature: -55...125°C
Kind of output: SPDT
Application: automotive industry
Category: Analog multiplexers and switches
Description: IC: analog switch; demultiplexer,multiplexer; Ch: 1; SC88A
Type of integrated circuit: analog switch
Kind of integrated circuit: demultiplexer; multiplexer
Number of channels: 1
Case: SC88A
Supply voltage: 1.65...5.5V DC
Mounting: SMD
Operating temperature: -55...125°C
Kind of output: SPDT
Application: automotive industry
auf Bestellung 970 Stücke:
Lieferzeit 14-21 Tag (e)| Anzahl | Preis ohne MwSt |
|---|---|
| 181+ | 0.4 EUR |
| 206+ | 0.35 EUR |
| 255+ | 0.28 EUR |
| 270+ | 0.27 EUR |
| NTR4003NT1G |
|
Hersteller: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 0.56A; 0.69W; SOT23
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 0.56A
Power dissipation: 0.69W
Case: SOT23
Gate-source voltage: ±20V
On-state resistance: 2Ω
Mounting: SMD
Gate charge: 1.15nC
Kind of package: reel; tape
Kind of channel: enhanced
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 0.56A; 0.69W; SOT23
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 0.56A
Power dissipation: 0.69W
Case: SOT23
Gate-source voltage: ±20V
On-state resistance: 2Ω
Mounting: SMD
Gate charge: 1.15nC
Kind of package: reel; tape
Kind of channel: enhanced
auf Bestellung 2532 Stücke:
Lieferzeit 14-21 Tag (e)| Anzahl | Preis ohne MwSt |
|---|---|
| 893+ | 0.08 EUR |
| 995+ | 0.072 EUR |
| 1299+ | 0.055 EUR |
| 1374+ | 0.052 EUR |
| MM5Z12VT1G |
|
Hersteller: ONSEMI
Category: SMD Zener diodes
Description: Diode: Zener; 0.5W; 12V; SMD; reel,tape; SOD523; single diode
Type of diode: Zener
Power dissipation: 0.5W
Zener voltage: 12V
Kind of package: reel; tape
Case: SOD523
Mounting: SMD
Tolerance: ±5%
Semiconductor structure: single diode
Category: SMD Zener diodes
Description: Diode: Zener; 0.5W; 12V; SMD; reel,tape; SOD523; single diode
Type of diode: Zener
Power dissipation: 0.5W
Zener voltage: 12V
Kind of package: reel; tape
Case: SOD523
Mounting: SMD
Tolerance: ±5%
Semiconductor structure: single diode
Produkt ist nicht verfügbar
| M74VHC1GT125DF1G |
|
Hersteller: ONSEMI
Category: Buffers, transceivers, drivers
Description: IC: digital; buffer,non-inverting; Ch: 1; CMOS; SMD; SC88A; VHC
Type of integrated circuit: digital
Kind of integrated circuit: buffer; non-inverting
Number of channels: 1
Technology: CMOS
Mounting: SMD
Case: SC88A
Manufacturer series: VHC
Supply voltage: 2...5.5V DC
Operating temperature: -55...125°C
Kind of output: 3-state
Category: Buffers, transceivers, drivers
Description: IC: digital; buffer,non-inverting; Ch: 1; CMOS; SMD; SC88A; VHC
Type of integrated circuit: digital
Kind of integrated circuit: buffer; non-inverting
Number of channels: 1
Technology: CMOS
Mounting: SMD
Case: SC88A
Manufacturer series: VHC
Supply voltage: 2...5.5V DC
Operating temperature: -55...125°C
Kind of output: 3-state
Produkt ist nicht verfügbar
| MBRD650CTT4G |
|
Hersteller: ONSEMI
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SMD; 60V; 3Ax2; DPAK; reel,tape
Type of diode: Schottky rectifying
Mounting: SMD
Max. off-state voltage: 60V
Load current: 3A x2
Max. load current: 6A
Semiconductor structure: common cathode; double
Max. forward voltage: 0.85V
Case: DPAK
Kind of package: reel; tape
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SMD; 60V; 3Ax2; DPAK; reel,tape
Type of diode: Schottky rectifying
Mounting: SMD
Max. off-state voltage: 60V
Load current: 3A x2
Max. load current: 6A
Semiconductor structure: common cathode; double
Max. forward voltage: 0.85V
Case: DPAK
Kind of package: reel; tape
Produkt ist nicht verfügbar
| MC100EPT22DG |
|
Hersteller: ONSEMI
Category: Level translators
Description: IC: digital; Ch: 2; 3÷3.6VDC; SMD; SO8; -40÷85°C; tube; IN: 4; OUT: 2
Type of integrated circuit: digital
Kind of integrated circuit: logic level voltage translator; LVTTL to LVPECL translator
Number of channels: 2
Supply voltage: 3...3.6V DC
Mounting: SMD
Case: SO8
Operating temperature: -40...85°C
Kind of package: tube
Number of inputs: 4
Number of outputs: 2
Manufacturer series: 100EPT
Category: Level translators
Description: IC: digital; Ch: 2; 3÷3.6VDC; SMD; SO8; -40÷85°C; tube; IN: 4; OUT: 2
Type of integrated circuit: digital
Kind of integrated circuit: logic level voltage translator; LVTTL to LVPECL translator
Number of channels: 2
Supply voltage: 3...3.6V DC
Mounting: SMD
Case: SO8
Operating temperature: -40...85°C
Kind of package: tube
Number of inputs: 4
Number of outputs: 2
Manufacturer series: 100EPT
Produkt ist nicht verfügbar
| MC100EPT22DTG |
|
Hersteller: ONSEMI
Category: Level translators
Description: IC: digital; Ch: 2; 3÷3.6VDC; SMD; TSSOP8; -40÷85°C; tube; IN: 4; OUT: 2
Type of integrated circuit: digital
Kind of integrated circuit: LVCMOS to LVPECL translator; LVTTL to LVPECL translator
Number of channels: 2
Supply voltage: 3...3.6V DC
Mounting: SMD
Case: TSSOP8
Operating temperature: -40...85°C
Kind of package: tube
Number of inputs: 4
Number of outputs: 2
Manufacturer series: 100EPT
Category: Level translators
Description: IC: digital; Ch: 2; 3÷3.6VDC; SMD; TSSOP8; -40÷85°C; tube; IN: 4; OUT: 2
Type of integrated circuit: digital
Kind of integrated circuit: LVCMOS to LVPECL translator; LVTTL to LVPECL translator
Number of channels: 2
Supply voltage: 3...3.6V DC
Mounting: SMD
Case: TSSOP8
Operating temperature: -40...85°C
Kind of package: tube
Number of inputs: 4
Number of outputs: 2
Manufacturer series: 100EPT
Produkt ist nicht verfügbar
| BAT54HT1G |
|
Hersteller: ONSEMI
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SMD; 30V; 0.2A; 5ns; SOD323; reel,tape
Type of diode: Schottky rectifying
Mounting: SMD
Max. off-state voltage: 30V
Load current: 0.2A
Max. load current: 0.3A
Reverse recovery time: 5ns
Semiconductor structure: single diode
Capacitance: 7.6pF
Case: SOD323
Kind of package: reel; tape
Max. forward impulse current: 0.6A
Power dissipation: 0.2W
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SMD; 30V; 0.2A; 5ns; SOD323; reel,tape
Type of diode: Schottky rectifying
Mounting: SMD
Max. off-state voltage: 30V
Load current: 0.2A
Max. load current: 0.3A
Reverse recovery time: 5ns
Semiconductor structure: single diode
Capacitance: 7.6pF
Case: SOD323
Kind of package: reel; tape
Max. forward impulse current: 0.6A
Power dissipation: 0.2W
auf Bestellung 1065 Stücke:
Lieferzeit 14-21 Tag (e)| Anzahl | Preis ohne MwSt |
|---|---|
| 358+ | 0.2 EUR |
| 625+ | 0.11 EUR |
| 745+ | 0.096 EUR |
| 958+ | 0.075 EUR |
| 1065+ | 0.067 EUR |
| HCPL2611M |
|
Hersteller: ONSEMI
Category: Optocouplers - digital output
Description: Optocoupler; THT; Ch: 1; OUT: logic; Uinsul: 5kV; 10Mbps; DIP8
Type of optocoupler: optocoupler
Mounting: THT
Number of channels: 1
Kind of output: logic
Insulation voltage: 5kV
Transfer rate: 10Mbps
Case: DIP8
Turn-on time: 30ns
Turn-off time: 30ns
Slew rate: 15kV/μs
Max. off-state voltage: 5V
Output voltage: -500mV...7V
Manufacturer series: HCPL2611M
Category: Optocouplers - digital output
Description: Optocoupler; THT; Ch: 1; OUT: logic; Uinsul: 5kV; 10Mbps; DIP8
Type of optocoupler: optocoupler
Mounting: THT
Number of channels: 1
Kind of output: logic
Insulation voltage: 5kV
Transfer rate: 10Mbps
Case: DIP8
Turn-on time: 30ns
Turn-off time: 30ns
Slew rate: 15kV/μs
Max. off-state voltage: 5V
Output voltage: -500mV...7V
Manufacturer series: HCPL2611M
Produkt ist nicht verfügbar
| MBRD660CTT4G |
|
Hersteller: ONSEMI
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SMD; 60V; 3Ax2; DPAK; reel,tape
Type of diode: Schottky rectifying
Mounting: SMD
Max. off-state voltage: 60V
Load current: 3A x2
Max. load current: 6A
Semiconductor structure: common cathode; double
Max. forward voltage: 0.85V
Case: DPAK
Kind of package: reel; tape
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SMD; 60V; 3Ax2; DPAK; reel,tape
Type of diode: Schottky rectifying
Mounting: SMD
Max. off-state voltage: 60V
Load current: 3A x2
Max. load current: 6A
Semiconductor structure: common cathode; double
Max. forward voltage: 0.85V
Case: DPAK
Kind of package: reel; tape
Produkt ist nicht verfügbar
| MBR735G |
|
Hersteller: ONSEMI
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; THT; 35V; 7.5A; TO220AC; tube
Type of diode: Schottky rectifying
Mounting: THT
Max. off-state voltage: 35V
Load current: 7.5A
Max. load current: 7.5A
Semiconductor structure: single diode
Max. forward voltage: 0.57V
Case: TO220AC
Kind of package: tube
Max. forward impulse current: 150A
Heatsink thickness: 1.14...1.39mm
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; THT; 35V; 7.5A; TO220AC; tube
Type of diode: Schottky rectifying
Mounting: THT
Max. off-state voltage: 35V
Load current: 7.5A
Max. load current: 7.5A
Semiconductor structure: single diode
Max. forward voltage: 0.57V
Case: TO220AC
Kind of package: tube
Max. forward impulse current: 150A
Heatsink thickness: 1.14...1.39mm
auf Bestellung 8 Stücke:
Lieferzeit 14-21 Tag (e)| Anzahl | Preis ohne MwSt |
|---|---|
| 8+ | 8.94 EUR |
| MBR1080G |
|
Hersteller: ONSEMI
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; THT; 80V; 10A; TO220AC; tube
Type of diode: Schottky rectifying
Mounting: THT
Max. off-state voltage: 80V
Load current: 10A
Max. load current: 20A
Semiconductor structure: single diode
Max. forward voltage: 0.85V
Case: TO220AC
Kind of package: tube
Max. forward impulse current: 150A
Heatsink thickness: 1.14...1.39mm
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; THT; 80V; 10A; TO220AC; tube
Type of diode: Schottky rectifying
Mounting: THT
Max. off-state voltage: 80V
Load current: 10A
Max. load current: 20A
Semiconductor structure: single diode
Max. forward voltage: 0.85V
Case: TO220AC
Kind of package: tube
Max. forward impulse current: 150A
Heatsink thickness: 1.14...1.39mm
Produkt ist nicht verfügbar
| MBR1100G |
|
Hersteller: ONSEMI
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; THT; 100V; 1A; DO41; bulk; Ufmax: 0.79V
Type of diode: Schottky rectifying
Mounting: THT
Max. off-state voltage: 100V
Load current: 1A
Max. load current: 2A
Semiconductor structure: single diode
Case: DO41
Kind of package: bulk
Max. forward impulse current: 50A
Max. forward voltage: 0.79V
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; THT; 100V; 1A; DO41; bulk; Ufmax: 0.79V
Type of diode: Schottky rectifying
Mounting: THT
Max. off-state voltage: 100V
Load current: 1A
Max. load current: 2A
Semiconductor structure: single diode
Case: DO41
Kind of package: bulk
Max. forward impulse current: 50A
Max. forward voltage: 0.79V
auf Bestellung 882 Stücke:
Lieferzeit 14-21 Tag (e)| Anzahl | Preis ohne MwSt |
|---|---|
| 173+ | 0.41 EUR |
| 261+ | 0.27 EUR |
| 329+ | 0.22 EUR |
| 348+ | 0.21 EUR |
| MC14518BDWG |
|
Hersteller: ONSEMI
Category: Counters/dividers
Description: IC: digital; BCD,up counter; Ch: 2; IN: 3; CMOS; SMD; SO16WB; 3÷18VDC
Type of integrated circuit: digital
Kind of integrated circuit: BCD; up counter
Number of channels: 2
Number of inputs: 3
Technology: CMOS
Mounting: SMD
Case: SO16WB
Supply voltage: 3...18V DC
Kind of package: tube
Operating temperature: -55...125°C
Category: Counters/dividers
Description: IC: digital; BCD,up counter; Ch: 2; IN: 3; CMOS; SMD; SO16WB; 3÷18VDC
Type of integrated circuit: digital
Kind of integrated circuit: BCD; up counter
Number of channels: 2
Number of inputs: 3
Technology: CMOS
Mounting: SMD
Case: SO16WB
Supply voltage: 3...18V DC
Kind of package: tube
Operating temperature: -55...125°C
Produkt ist nicht verfügbar
| MC14518BDWR2G |
|
Hersteller: ONSEMI
Category: Counters/dividers
Description: IC: digital; BCD,up counter; Ch: 2; IN: 3; CMOS; SMD; SO16WB; 3÷18VDC
Type of integrated circuit: digital
Kind of integrated circuit: BCD; up counter
Number of channels: 2
Number of inputs: 3
Technology: CMOS
Mounting: SMD
Case: SO16WB
Supply voltage: 3...18V DC
Kind of package: reel; tape
Operating temperature: -55...125°C
Category: Counters/dividers
Description: IC: digital; BCD,up counter; Ch: 2; IN: 3; CMOS; SMD; SO16WB; 3÷18VDC
Type of integrated circuit: digital
Kind of integrated circuit: BCD; up counter
Number of channels: 2
Number of inputs: 3
Technology: CMOS
Mounting: SMD
Case: SO16WB
Supply voltage: 3...18V DC
Kind of package: reel; tape
Operating temperature: -55...125°C
Produkt ist nicht verfügbar
| BAV74LT1G |
|
Hersteller: ONSEMI
Category: SMD universal diodes
Description: Diode: switching; SMD; 50V; 0.2A; 4ns; SOT23; Ifsm: 500mA; 300mW
Mounting: SMD
Capacitance: 2pF
Max. off-state voltage: 50V
Load current: 0.2A
Semiconductor structure: common cathode; double
Reverse recovery time: 4ns
Max. forward impulse current: 0.5A
Power dissipation: 0.3W
Kind of package: reel; tape
Type of diode: switching
Case: SOT23
Category: SMD universal diodes
Description: Diode: switching; SMD; 50V; 0.2A; 4ns; SOT23; Ifsm: 500mA; 300mW
Mounting: SMD
Capacitance: 2pF
Max. off-state voltage: 50V
Load current: 0.2A
Semiconductor structure: common cathode; double
Reverse recovery time: 4ns
Max. forward impulse current: 0.5A
Power dissipation: 0.3W
Kind of package: reel; tape
Type of diode: switching
Case: SOT23
auf Bestellung 4150 Stücke:
Lieferzeit 14-21 Tag (e)| Anzahl | Preis ohne MwSt |
|---|---|
| 1500+ | 0.048 EUR |
| 2500+ | 0.029 EUR |
| 2800+ | 0.026 EUR |
| 3500+ | 0.02 EUR |
| 3725+ | 0.019 EUR |
| KSD560YTU |
|
Hersteller: ONSEMI
Category: NPN THT Darlington transistors
Description: Transistor: NPN; bipolar; Darlington; 100V; 5A; 1.5W; TO220AB
Mounting: THT
Case: TO220AB
Power dissipation: 1.5W
Kind of package: tube
Kind of transistor: Darlington
Collector-emitter voltage: 100V
Collector current: 5A
Type of transistor: NPN
Polarisation: bipolar
Category: NPN THT Darlington transistors
Description: Transistor: NPN; bipolar; Darlington; 100V; 5A; 1.5W; TO220AB
Mounting: THT
Case: TO220AB
Power dissipation: 1.5W
Kind of package: tube
Kind of transistor: Darlington
Collector-emitter voltage: 100V
Collector current: 5A
Type of transistor: NPN
Polarisation: bipolar
Produkt ist nicht verfügbar
| NCV7342D10R2G |
|
Hersteller: ONSEMI
Category: Interfaces others - integrated circuits
Description: IC: interface; transceiver; 4.5÷5.5VDC; SMD; SO8; reel,tape
Type of integrated circuit: interface
Kind of integrated circuit: transceiver
Supply voltage: 4.5...5.5V DC
Mounting: SMD
Case: SO8
Operating temperature: -40...125°C
Kind of package: reel; tape
Application: Automotive
Category: Interfaces others - integrated circuits
Description: IC: interface; transceiver; 4.5÷5.5VDC; SMD; SO8; reel,tape
Type of integrated circuit: interface
Kind of integrated circuit: transceiver
Supply voltage: 4.5...5.5V DC
Mounting: SMD
Case: SO8
Operating temperature: -40...125°C
Kind of package: reel; tape
Application: Automotive
Produkt ist nicht verfügbar
| NCV7342D13R2G |
|
Hersteller: ONSEMI
Category: Interfaces others - integrated circuits
Description: IC: interface; transceiver; 4.5÷5.5VDC; SMD; SO8; reel,tape
Type of integrated circuit: interface
Kind of integrated circuit: transceiver
Supply voltage: 4.5...5.5V DC
Mounting: SMD
Case: SO8
Kind of package: reel; tape
Application: Automotive
Category: Interfaces others - integrated circuits
Description: IC: interface; transceiver; 4.5÷5.5VDC; SMD; SO8; reel,tape
Type of integrated circuit: interface
Kind of integrated circuit: transceiver
Supply voltage: 4.5...5.5V DC
Mounting: SMD
Case: SO8
Kind of package: reel; tape
Application: Automotive
Produkt ist nicht verfügbar
| HUF75344G3 |
|
Hersteller: ONSEMI
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 55V; 75A; 285W; TO247
Mounting: THT
Case: TO247
Kind of package: tube
On-state resistance: 8mΩ
Type of transistor: N-MOSFET
Polarisation: unipolar
Gate charge: 7nC
Technology: UltraFET®
Kind of channel: enhanced
Gate-source voltage: ±20V
Power dissipation: 285W
Drain-source voltage: 55V
Drain current: 75A
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 55V; 75A; 285W; TO247
Mounting: THT
Case: TO247
Kind of package: tube
On-state resistance: 8mΩ
Type of transistor: N-MOSFET
Polarisation: unipolar
Gate charge: 7nC
Technology: UltraFET®
Kind of channel: enhanced
Gate-source voltage: ±20V
Power dissipation: 285W
Drain-source voltage: 55V
Drain current: 75A
auf Bestellung 293 Stücke:
Lieferzeit 14-21 Tag (e)| Anzahl | Preis ohne MwSt |
|---|---|
| 15+ | 5.02 EUR |
| 21+ | 3.46 EUR |
| 22+ | 3.27 EUR |
| NCP156AAFCT120280T2G |
|
Hersteller: ONSEMI
Category: LDO unregulated voltage regulators
Description: IC: voltage regulator; LDO,linear,fixed; 1.2V,2.8V; 250÷500mA
Manufacturer series: NCP156
Output voltage: 1.2V; 2.8V
Output current: 250...500mA
Type of integrated circuit: voltage regulator
Number of channels: 2
Input voltage: 0.8...3.6V
Kind of voltage regulator: fixed; LDO; linear
Mounting: SMD
Operating temperature: -40...125°C
Case: WLCSP6
Tolerance: ±1%
Category: LDO unregulated voltage regulators
Description: IC: voltage regulator; LDO,linear,fixed; 1.2V,2.8V; 250÷500mA
Manufacturer series: NCP156
Output voltage: 1.2V; 2.8V
Output current: 250...500mA
Type of integrated circuit: voltage regulator
Number of channels: 2
Input voltage: 0.8...3.6V
Kind of voltage regulator: fixed; LDO; linear
Mounting: SMD
Operating temperature: -40...125°C
Case: WLCSP6
Tolerance: ±1%
Produkt ist nicht verfügbar
| MBRS190T3G |
|
Hersteller: ONSEMI
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SMD; 90V; 2A; SMB; reel,tape
Type of diode: Schottky rectifying
Mounting: SMD
Max. off-state voltage: 90V
Load current: 2A
Semiconductor structure: single diode
Max. forward voltage: 0.75V
Case: SMB
Kind of package: reel; tape
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SMD; 90V; 2A; SMB; reel,tape
Type of diode: Schottky rectifying
Mounting: SMD
Max. off-state voltage: 90V
Load current: 2A
Semiconductor structure: single diode
Max. forward voltage: 0.75V
Case: SMB
Kind of package: reel; tape
Produkt ist nicht verfügbar
| FDMS7620S |
|
Hersteller: ONSEMI
Category: Multi channel transistors
Description: Transistor: N-MOSFET x2; unipolar; 30/30V; 13/22A; 2.2/2.5W
Type of transistor: N-MOSFET x2
Polarisation: unipolar
Drain-source voltage: 30/30V
Drain current: 13/22A
Power dissipation: 2.2/2.5W
Case: Power56
Gate-source voltage: ±20/±20V
On-state resistance: 30/15.1mΩ
Mounting: SMD
Gate charge: 11/23nC
Kind of package: reel; tape
Kind of channel: enhanced
Category: Multi channel transistors
Description: Transistor: N-MOSFET x2; unipolar; 30/30V; 13/22A; 2.2/2.5W
Type of transistor: N-MOSFET x2
Polarisation: unipolar
Drain-source voltage: 30/30V
Drain current: 13/22A
Power dissipation: 2.2/2.5W
Case: Power56
Gate-source voltage: ±20/±20V
On-state resistance: 30/15.1mΩ
Mounting: SMD
Gate charge: 11/23nC
Kind of package: reel; tape
Kind of channel: enhanced
Produkt ist nicht verfügbar
| FDMS9620S |
|
Hersteller: ONSEMI
Category: Multi channel transistors
Description: Transistor: N-MOSFET x2; unipolar; 30/30V; 16/18A; Idm: 60A; 2.5W
Type of transistor: N-MOSFET x2
Technology: PowerTrench®
Polarisation: unipolar
Drain-source voltage: 30/30V
Drain current: 16/18A
Pulsed drain current: 60A
Power dissipation: 2.5W
Case: Power56
Gate-source voltage: ±20V
On-state resistance: 32/22mΩ
Mounting: SMD
Gate charge: 14/25nC
Kind of package: reel; tape
Kind of channel: enhanced
Category: Multi channel transistors
Description: Transistor: N-MOSFET x2; unipolar; 30/30V; 16/18A; Idm: 60A; 2.5W
Type of transistor: N-MOSFET x2
Technology: PowerTrench®
Polarisation: unipolar
Drain-source voltage: 30/30V
Drain current: 16/18A
Pulsed drain current: 60A
Power dissipation: 2.5W
Case: Power56
Gate-source voltage: ±20V
On-state resistance: 32/22mΩ
Mounting: SMD
Gate charge: 14/25nC
Kind of package: reel; tape
Kind of channel: enhanced
Produkt ist nicht verfügbar
| FQA70N10 |
|
Hersteller: ONSEMI
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 49.5A; 214W; TO3PN
Type of transistor: N-MOSFET
Technology: QFET®
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 49.5A
Power dissipation: 214W
Case: TO3PN
Gate-source voltage: ±25V
On-state resistance: 23mΩ
Mounting: THT
Gate charge: 11nC
Kind of package: tube
Kind of channel: enhanced
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 49.5A; 214W; TO3PN
Type of transistor: N-MOSFET
Technology: QFET®
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 49.5A
Power dissipation: 214W
Case: TO3PN
Gate-source voltage: ±25V
On-state resistance: 23mΩ
Mounting: THT
Gate charge: 11nC
Kind of package: tube
Kind of channel: enhanced
auf Bestellung 120 Stücke:
Lieferzeit 14-21 Tag (e)| Anzahl | Preis ohne MwSt |
|---|---|
| 20+ | 3.7 EUR |
| 22+ | 3.35 EUR |
| 28+ | 2.56 EUR |
| 30+ | 2.42 EUR |
| FQB11N40CTM |
|
Hersteller: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 400V; 6.6A; Idm: 42A; 135W; D2PAK
Type of transistor: N-MOSFET
Technology: QFET®
Polarisation: unipolar
Drain-source voltage: 400V
Drain current: 6.6A
Pulsed drain current: 42A
Power dissipation: 135W
Case: D2PAK
Gate-source voltage: ±30V
On-state resistance: 530mΩ
Mounting: SMD
Gate charge: 35nC
Kind of package: reel; tape
Kind of channel: enhanced
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 400V; 6.6A; Idm: 42A; 135W; D2PAK
Type of transistor: N-MOSFET
Technology: QFET®
Polarisation: unipolar
Drain-source voltage: 400V
Drain current: 6.6A
Pulsed drain current: 42A
Power dissipation: 135W
Case: D2PAK
Gate-source voltage: ±30V
On-state resistance: 530mΩ
Mounting: SMD
Gate charge: 35nC
Kind of package: reel; tape
Kind of channel: enhanced
Produkt ist nicht verfügbar
| FQB12P20TM |
|
Hersteller: ONSEMI
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -200V; -7.27A; 120W; D2PAK
Type of transistor: P-MOSFET
Technology: QFET®
Polarisation: unipolar
Drain-source voltage: -200V
Drain current: -7.27A
Power dissipation: 120W
Case: D2PAK
Gate-source voltage: ±30V
On-state resistance: 470mΩ
Mounting: SMD
Gate charge: 40nC
Kind of package: reel; tape
Kind of channel: enhanced
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -200V; -7.27A; 120W; D2PAK
Type of transistor: P-MOSFET
Technology: QFET®
Polarisation: unipolar
Drain-source voltage: -200V
Drain current: -7.27A
Power dissipation: 120W
Case: D2PAK
Gate-source voltage: ±30V
On-state resistance: 470mΩ
Mounting: SMD
Gate charge: 40nC
Kind of package: reel; tape
Kind of channel: enhanced
Produkt ist nicht verfügbar
| FQB19N20CTM |
|
Hersteller: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 200V; 12.1A; Idm: 76A; 139W; D2PAK
Type of transistor: N-MOSFET
Technology: QFET®
Polarisation: unipolar
Drain-source voltage: 200V
Drain current: 12.1A
Pulsed drain current: 76A
Power dissipation: 139W
Case: D2PAK
Gate-source voltage: ±30V
On-state resistance: 0.17Ω
Mounting: SMD
Gate charge: 53nC
Kind of package: reel; tape
Kind of channel: enhanced
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 200V; 12.1A; Idm: 76A; 139W; D2PAK
Type of transistor: N-MOSFET
Technology: QFET®
Polarisation: unipolar
Drain-source voltage: 200V
Drain current: 12.1A
Pulsed drain current: 76A
Power dissipation: 139W
Case: D2PAK
Gate-source voltage: ±30V
On-state resistance: 0.17Ω
Mounting: SMD
Gate charge: 53nC
Kind of package: reel; tape
Kind of channel: enhanced
Produkt ist nicht verfügbar
| FQB19N20LTM |
|
Hersteller: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 200V; 13.3A; Idm: 84A; 140W; D2PAK
Type of transistor: N-MOSFET
Technology: QFET®
Polarisation: unipolar
Drain-source voltage: 200V
Drain current: 13.3A
Pulsed drain current: 84A
Power dissipation: 140W
Case: D2PAK
Gate-source voltage: ±20V
On-state resistance: 0.15Ω
Mounting: SMD
Gate charge: 35nC
Kind of package: reel; tape
Kind of channel: enhanced
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 200V; 13.3A; Idm: 84A; 140W; D2PAK
Type of transistor: N-MOSFET
Technology: QFET®
Polarisation: unipolar
Drain-source voltage: 200V
Drain current: 13.3A
Pulsed drain current: 84A
Power dissipation: 140W
Case: D2PAK
Gate-source voltage: ±20V
On-state resistance: 0.15Ω
Mounting: SMD
Gate charge: 35nC
Kind of package: reel; tape
Kind of channel: enhanced
auf Bestellung 106 Stücke:
Lieferzeit 14-21 Tag (e)| Anzahl | Preis ohne MwSt |
|---|---|
| 37+ | 1.94 EUR |
| 41+ | 1.76 EUR |
| 54+ | 1.34 EUR |
| 57+ | 1.27 EUR |
| FQB19N20TM |
|
Hersteller: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 200V; 12.3A; Idm: 78A; 140W; D2PAK
Type of transistor: N-MOSFET
Technology: QFET®
Polarisation: unipolar
Drain-source voltage: 200V
Drain current: 12.3A
Pulsed drain current: 78A
Power dissipation: 140W
Case: D2PAK
Gate-source voltage: ±30V
On-state resistance: 0.15Ω
Mounting: SMD
Gate charge: 40nC
Kind of package: reel; tape
Kind of channel: enhanced
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 200V; 12.3A; Idm: 78A; 140W; D2PAK
Type of transistor: N-MOSFET
Technology: QFET®
Polarisation: unipolar
Drain-source voltage: 200V
Drain current: 12.3A
Pulsed drain current: 78A
Power dissipation: 140W
Case: D2PAK
Gate-source voltage: ±30V
On-state resistance: 0.15Ω
Mounting: SMD
Gate charge: 40nC
Kind of package: reel; tape
Kind of channel: enhanced
Produkt ist nicht verfügbar
| FQB1P50TM |
|
Hersteller: ONSEMI
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -500V; -0.95A; 63W; D2PAK
Type of transistor: P-MOSFET
Technology: QFET®
Polarisation: unipolar
Drain-source voltage: -500V
Drain current: -0.95A
Power dissipation: 63W
Case: D2PAK
Gate-source voltage: ±30V
On-state resistance: 10.5Ω
Mounting: SMD
Gate charge: 14nC
Kind of package: reel; tape
Kind of channel: enhanced
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -500V; -0.95A; 63W; D2PAK
Type of transistor: P-MOSFET
Technology: QFET®
Polarisation: unipolar
Drain-source voltage: -500V
Drain current: -0.95A
Power dissipation: 63W
Case: D2PAK
Gate-source voltage: ±30V
On-state resistance: 10.5Ω
Mounting: SMD
Gate charge: 14nC
Kind of package: reel; tape
Kind of channel: enhanced
auf Bestellung 14 Stücke:
Lieferzeit 14-21 Tag (e)| Anzahl | Preis ohne MwSt |
|---|---|
| 14+ | 5.11 EUR |
| FQB22P10TM |
|
Hersteller: ONSEMI
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -100V; -15.6A; 125W; D2PAK
Type of transistor: P-MOSFET
Technology: QFET®
Polarisation: unipolar
Drain-source voltage: -100V
Drain current: -15.6A
Power dissipation: 125W
Case: D2PAK
Gate-source voltage: ±30V
On-state resistance: 0.125Ω
Mounting: SMD
Gate charge: 50nC
Kind of package: reel; tape
Kind of channel: enhanced
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -100V; -15.6A; 125W; D2PAK
Type of transistor: P-MOSFET
Technology: QFET®
Polarisation: unipolar
Drain-source voltage: -100V
Drain current: -15.6A
Power dissipation: 125W
Case: D2PAK
Gate-source voltage: ±30V
On-state resistance: 0.125Ω
Mounting: SMD
Gate charge: 50nC
Kind of package: reel; tape
Kind of channel: enhanced
Produkt ist nicht verfügbar
| FQB27P06TM |
|
Hersteller: ONSEMI
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -60V; -19.1A; 120W; D2PAK
Type of transistor: P-MOSFET
Technology: QFET®
Polarisation: unipolar
Drain-source voltage: -60V
Drain current: -19.1A
Power dissipation: 120W
Case: D2PAK
Gate-source voltage: ±25V
On-state resistance: 70mΩ
Mounting: SMD
Gate charge: 43nC
Kind of package: reel; tape
Kind of channel: enhanced
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -60V; -19.1A; 120W; D2PAK
Type of transistor: P-MOSFET
Technology: QFET®
Polarisation: unipolar
Drain-source voltage: -60V
Drain current: -19.1A
Power dissipation: 120W
Case: D2PAK
Gate-source voltage: ±25V
On-state resistance: 70mΩ
Mounting: SMD
Gate charge: 43nC
Kind of package: reel; tape
Kind of channel: enhanced
Produkt ist nicht verfügbar
| FQB34N20LTM |
|
Hersteller: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 200V; 20A; 180W; D2PAK
Type of transistor: N-MOSFET
Technology: QFET®
Polarisation: unipolar
Drain-source voltage: 200V
Drain current: 20A
Power dissipation: 180W
Case: D2PAK
Gate-source voltage: ±20V
On-state resistance: 80mΩ
Mounting: SMD
Gate charge: 72nC
Kind of package: reel; tape
Kind of channel: enhanced
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 200V; 20A; 180W; D2PAK
Type of transistor: N-MOSFET
Technology: QFET®
Polarisation: unipolar
Drain-source voltage: 200V
Drain current: 20A
Power dissipation: 180W
Case: D2PAK
Gate-source voltage: ±20V
On-state resistance: 80mΩ
Mounting: SMD
Gate charge: 72nC
Kind of package: reel; tape
Kind of channel: enhanced
Produkt ist nicht verfügbar
| FQB34N20TM-AM002 |
|
Hersteller: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 200V; 20A; Idm: 124A; 180W; D2PAK
Type of transistor: N-MOSFET
Technology: QFET®
Polarisation: unipolar
Drain-source voltage: 200V
Drain current: 20A
Pulsed drain current: 124A
Power dissipation: 180W
Case: D2PAK
Gate-source voltage: ±30V
On-state resistance: 75mΩ
Mounting: SMD
Gate charge: 78nC
Kind of package: reel; tape
Kind of channel: enhanced
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 200V; 20A; Idm: 124A; 180W; D2PAK
Type of transistor: N-MOSFET
Technology: QFET®
Polarisation: unipolar
Drain-source voltage: 200V
Drain current: 20A
Pulsed drain current: 124A
Power dissipation: 180W
Case: D2PAK
Gate-source voltage: ±30V
On-state resistance: 75mΩ
Mounting: SMD
Gate charge: 78nC
Kind of package: reel; tape
Kind of channel: enhanced
Produkt ist nicht verfügbar
| FQB34P10TM |
|
Hersteller: ONSEMI
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -100V; -23.5A; 155W; D2PAK
Type of transistor: P-MOSFET
Technology: QFET®
Polarisation: unipolar
Drain-source voltage: -100V
Drain current: -23.5A
Power dissipation: 155W
Case: D2PAK
Gate-source voltage: ±25V
On-state resistance: 60mΩ
Mounting: SMD
Gate charge: 110nC
Kind of package: reel; tape
Kind of channel: enhanced
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -100V; -23.5A; 155W; D2PAK
Type of transistor: P-MOSFET
Technology: QFET®
Polarisation: unipolar
Drain-source voltage: -100V
Drain current: -23.5A
Power dissipation: 155W
Case: D2PAK
Gate-source voltage: ±25V
On-state resistance: 60mΩ
Mounting: SMD
Gate charge: 110nC
Kind of package: reel; tape
Kind of channel: enhanced
Produkt ist nicht verfügbar
| FQB34P10TM-F085 |
Hersteller: ONSEMI
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -100V; -23.5A; Idm: -134A; 155W
Type of transistor: P-MOSFET
Technology: QFET®
Polarisation: unipolar
Drain-source voltage: -100V
Drain current: -23.5A
Pulsed drain current: -134A
Power dissipation: 155W
Case: D2PAK
Gate-source voltage: ±25V
On-state resistance: 60mΩ
Mounting: SMD
Gate charge: 110nC
Kind of package: reel; tape
Kind of channel: enhanced
Application: automotive industry
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -100V; -23.5A; Idm: -134A; 155W
Type of transistor: P-MOSFET
Technology: QFET®
Polarisation: unipolar
Drain-source voltage: -100V
Drain current: -23.5A
Pulsed drain current: -134A
Power dissipation: 155W
Case: D2PAK
Gate-source voltage: ±25V
On-state resistance: 60mΩ
Mounting: SMD
Gate charge: 110nC
Kind of package: reel; tape
Kind of channel: enhanced
Application: automotive industry
Produkt ist nicht verfügbar
| FQB44N10TM |
|
Hersteller: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 30.8A; 146W; D2PAK
Type of transistor: N-MOSFET
Technology: QFET®
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 30.8A
Power dissipation: 146W
Case: D2PAK
Gate-source voltage: ±25V
On-state resistance: 39mΩ
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhanced
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 30.8A; 146W; D2PAK
Type of transistor: N-MOSFET
Technology: QFET®
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 30.8A
Power dissipation: 146W
Case: D2PAK
Gate-source voltage: ±25V
On-state resistance: 39mΩ
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhanced
Produkt ist nicht verfügbar
| PCA9535ECMTTXG |
|
Hersteller: ONSEMI
Category: Interfaces others - integrated circuits
Description: IC: interface; I/O expander; 1.65÷5.5VDC; I2C,SMBus; SMD; WQFN24
Supply voltage: 1.65...5.5V DC
Operating temperature: -55...125°C
Interface: I2C; SMBus
Kind of package: reel; tape
Application: for LED applications
Mounting: SMD
Frequency: 1MHz
Type of integrated circuit: interface
Kind of integrated circuit: I/O expander
Number of channels: 16
Case: WQFN24
Integrated circuit features: PWM
Category: Interfaces others - integrated circuits
Description: IC: interface; I/O expander; 1.65÷5.5VDC; I2C,SMBus; SMD; WQFN24
Supply voltage: 1.65...5.5V DC
Operating temperature: -55...125°C
Interface: I2C; SMBus
Kind of package: reel; tape
Application: for LED applications
Mounting: SMD
Frequency: 1MHz
Type of integrated circuit: interface
Kind of integrated circuit: I/O expander
Number of channels: 16
Case: WQFN24
Integrated circuit features: PWM
Produkt ist nicht verfügbar
| PCA9535EDWR2G |
|
Hersteller: ONSEMI
Category: Interfaces others - integrated circuits
Description: IC: interface; I/O expander; 1.65÷5.5VDC; I2C,SMBus; SMD; SO24
Supply voltage: 1.65...5.5V DC
Operating temperature: -55...125°C
Interface: I2C; SMBus
Kind of package: reel; tape
Application: for LED applications
Mounting: SMD
Frequency: 1MHz
Type of integrated circuit: interface
Kind of integrated circuit: I/O expander
Number of channels: 16
Case: SO24
Integrated circuit features: PWM
Category: Interfaces others - integrated circuits
Description: IC: interface; I/O expander; 1.65÷5.5VDC; I2C,SMBus; SMD; SO24
Supply voltage: 1.65...5.5V DC
Operating temperature: -55...125°C
Interface: I2C; SMBus
Kind of package: reel; tape
Application: for LED applications
Mounting: SMD
Frequency: 1MHz
Type of integrated circuit: interface
Kind of integrated circuit: I/O expander
Number of channels: 16
Case: SO24
Integrated circuit features: PWM
Produkt ist nicht verfügbar
| NCV7344AD10R2G |
|
Hersteller: ONSEMI
Category: Interfaces others - integrated circuits
Description: IC: interface; transceiver; 4.75÷5.25VDC; SMD; SO8; reel,tape
Supply voltage: 4.75...5.25V DC
Operating temperature: -40...150°C
Kind of package: reel; tape
Application: Automotive
Type of integrated circuit: interface
Case: SO8
Kind of integrated circuit: transceiver
Mounting: SMD
Category: Interfaces others - integrated circuits
Description: IC: interface; transceiver; 4.75÷5.25VDC; SMD; SO8; reel,tape
Supply voltage: 4.75...5.25V DC
Operating temperature: -40...150°C
Kind of package: reel; tape
Application: Automotive
Type of integrated circuit: interface
Case: SO8
Kind of integrated circuit: transceiver
Mounting: SMD
Produkt ist nicht verfügbar
| NCV7344D10R2G |
|
Hersteller: ONSEMI
Category: Interfaces others - integrated circuits
Description: IC: interface; transceiver; 4.75÷5.25VDC; SMD; SO8; reel,tape
Supply voltage: 4.75...5.25V DC
Operating temperature: -40...150°C
Kind of package: reel; tape
Application: Automotive
Type of integrated circuit: interface
Case: SO8
Kind of integrated circuit: transceiver
Mounting: SMD
Category: Interfaces others - integrated circuits
Description: IC: interface; transceiver; 4.75÷5.25VDC; SMD; SO8; reel,tape
Supply voltage: 4.75...5.25V DC
Operating temperature: -40...150°C
Kind of package: reel; tape
Application: Automotive
Type of integrated circuit: interface
Case: SO8
Kind of integrated circuit: transceiver
Mounting: SMD
Produkt ist nicht verfügbar
| NCV7344D13R2G |
|
Hersteller: ONSEMI
Category: Interfaces others - integrated circuits
Description: IC: interface; transceiver; 4.75÷5.25VDC; SMD; SO8; reel,tape
Supply voltage: 4.75...5.25V DC
Operating temperature: -40...150°C
Kind of package: reel; tape
Application: Automotive
Type of integrated circuit: interface
Case: SO8
Kind of integrated circuit: transceiver
Mounting: SMD
Category: Interfaces others - integrated circuits
Description: IC: interface; transceiver; 4.75÷5.25VDC; SMD; SO8; reel,tape
Supply voltage: 4.75...5.25V DC
Operating temperature: -40...150°C
Kind of package: reel; tape
Application: Automotive
Type of integrated circuit: interface
Case: SO8
Kind of integrated circuit: transceiver
Mounting: SMD
Produkt ist nicht verfügbar
| FXL4TD245BQX |
|
Hersteller: ONSEMI
Category: Level translators
Description: IC: digital; Ch: 4; 1.1÷3.6VDC; SMD; DQFN16; -40÷85°C; reel,tape
Type of integrated circuit: digital
Kind of integrated circuit: 3-state; bidirectional; logic level voltage translator; non-inverting
Mounting: SMD
Case: DQFN16
Supply voltage: 1.1...3.6V DC
Operating temperature: -40...85°C
Number of channels: 4
Number of inputs: 4
Number of outputs: 4
Kind of package: reel; tape
Category: Level translators
Description: IC: digital; Ch: 4; 1.1÷3.6VDC; SMD; DQFN16; -40÷85°C; reel,tape
Type of integrated circuit: digital
Kind of integrated circuit: 3-state; bidirectional; logic level voltage translator; non-inverting
Mounting: SMD
Case: DQFN16
Supply voltage: 1.1...3.6V DC
Operating temperature: -40...85°C
Number of channels: 4
Number of inputs: 4
Number of outputs: 4
Kind of package: reel; tape
Produkt ist nicht verfügbar
| 74AUP1T97FHX |
|
Hersteller: ONSEMI
Category: Gates, inverters
Description: IC: digital; buffer,inverter,Schmitt trigger,translator; Ch: 1
Type of integrated circuit: digital
Kind of integrated circuit: buffer; inverter; Schmitt trigger; translator
Kind of gate: AND; configurable; multiple-function; NAND; NOR; OR
Number of channels: 1
Number of inputs: 3
Technology: CMOS
Mounting: SMD
Case: uDFN6
Manufacturer series: AUP
Supply voltage: 0.8...3.6V DC
Operating temperature: -40...85°C
Kind of package: reel; tape
Kind of input: with Schmitt trigger
Family: AUP
Category: Gates, inverters
Description: IC: digital; buffer,inverter,Schmitt trigger,translator; Ch: 1
Type of integrated circuit: digital
Kind of integrated circuit: buffer; inverter; Schmitt trigger; translator
Kind of gate: AND; configurable; multiple-function; NAND; NOR; OR
Number of channels: 1
Number of inputs: 3
Technology: CMOS
Mounting: SMD
Case: uDFN6
Manufacturer series: AUP
Supply voltage: 0.8...3.6V DC
Operating temperature: -40...85°C
Kind of package: reel; tape
Kind of input: with Schmitt trigger
Family: AUP
Produkt ist nicht verfügbar
| 74AUP1T97L6X |
|
Hersteller: ONSEMI
Category: Gates, inverters
Description: IC: digital; buffer,inverter,Schmitt trigger,translator; Ch: 1
Type of integrated circuit: digital
Kind of integrated circuit: buffer; inverter; Schmitt trigger; translator
Kind of gate: AND; configurable; multiple-function; NAND; NOR; OR
Number of channels: 1
Number of inputs: 3
Technology: CMOS
Mounting: SMD
Case: SIP6
Manufacturer series: AUP
Supply voltage: 0.8...3.6V DC
Operating temperature: -40...85°C
Kind of package: reel; tape
Kind of input: with Schmitt trigger
Family: AUP
Category: Gates, inverters
Description: IC: digital; buffer,inverter,Schmitt trigger,translator; Ch: 1
Type of integrated circuit: digital
Kind of integrated circuit: buffer; inverter; Schmitt trigger; translator
Kind of gate: AND; configurable; multiple-function; NAND; NOR; OR
Number of channels: 1
Number of inputs: 3
Technology: CMOS
Mounting: SMD
Case: SIP6
Manufacturer series: AUP
Supply voltage: 0.8...3.6V DC
Operating temperature: -40...85°C
Kind of package: reel; tape
Kind of input: with Schmitt trigger
Family: AUP
Produkt ist nicht verfügbar
| FL7760AM6X |
|
Hersteller: ONSEMI
Category: Voltage regulators - PWM circuits
Description: IC: PMIC; DC/DC converter,LED driver; Uin: 8÷70V; -2.5÷1.5A; Ch: 1
Type of integrated circuit: PMIC
Kind of integrated circuit: DC/DC converter; LED driver
Input voltage: 8...70V
Output current: -2.5...1.5A
Case: SOT23-6
Mounting: SMD
Frequency: 1MHz
Topology: buck
Number of channels: 1
Kind of package: reel; tape
Integrated circuit features: linear dimming; PWM
Application: for LED applications
Category: Voltage regulators - PWM circuits
Description: IC: PMIC; DC/DC converter,LED driver; Uin: 8÷70V; -2.5÷1.5A; Ch: 1
Type of integrated circuit: PMIC
Kind of integrated circuit: DC/DC converter; LED driver
Input voltage: 8...70V
Output current: -2.5...1.5A
Case: SOT23-6
Mounting: SMD
Frequency: 1MHz
Topology: buck
Number of channels: 1
Kind of package: reel; tape
Integrated circuit features: linear dimming; PWM
Application: for LED applications
Produkt ist nicht verfügbar
| MMSZ6V8T1G |
|
Hersteller: ONSEMI
Category: SMD Zener diodes
Description: Diode: Zener; 0.5W; 6.8V; SMD; reel,tape; SOD123; single diode
Type of diode: Zener
Power dissipation: 0.5W
Zener voltage: 6.8V
Mounting: SMD
Tolerance: ±5%
Kind of package: reel; tape
Case: SOD123
Semiconductor structure: single diode
Category: SMD Zener diodes
Description: Diode: Zener; 0.5W; 6.8V; SMD; reel,tape; SOD123; single diode
Type of diode: Zener
Power dissipation: 0.5W
Zener voltage: 6.8V
Mounting: SMD
Tolerance: ±5%
Kind of package: reel; tape
Case: SOD123
Semiconductor structure: single diode
auf Bestellung 4822 Stücke:
Lieferzeit 14-21 Tag (e)| Anzahl | Preis ohne MwSt |
|---|---|
| 1309+ | 0.055 EUR |
| 1454+ | 0.049 EUR |
| 1998+ | 0.036 EUR |
| 2114+ | 0.034 EUR |