| Foto | Bezeichnung | Hersteller | Beschreibung | Verfügbarkeit | Privatkunde | ||||||||||||||||||
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FOD420TV | onsemi |
Description: OPTOISOLATOR 5KV TRIAC 6DIPVoltage - Isolation: 5000Vrms Voltage - Forward (Vf) (Typ): 1.28V Operating Temperature: -55°C ~ 100°C Mounting Type: Through Hole Output Type: Triac Package / Case: 6-DIP (0.400", 10.16mm) Packaging: Tube Current - DC Forward (If) (Max): 30 mA Voltage - Off State: 600 V Number of Channels: 1 Part Status: Active Current - LED Trigger (Ift) (Max): 2mA Static dV/dt (Min): 10kV/µs Zero Crossing Circuit: No Supplier Device Package: 6-DIP Turn On Time: 60µs Current - Hold (Ih): 500µA Approval Agency: cUL, FIMKO, UL, VDE |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||||||
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FODM121 | onsemi |
Description: OPTOISO 3.75KV TRANSISTOR 4SMDCurrent - DC Forward (If) (Max): 50 mA Number of Channels: 1 Rise / Fall Time (Typ): 3µs, 3µs Voltage - Output (Max): 80V Voltage - Isolation: 3750Vrms Current - Output / Channel: 80mA Input Type: DC Voltage - Forward (Vf) (Typ): 1.3V (Max) Operating Temperature: -40°C ~ 110°C Mounting Type: Surface Mount Output Type: Transistor Package / Case: 4-SMD, Gull Wing Packaging: Tube Supplier Device Package: 4-SMD Current Transfer Ratio (Max): 600% @ 5mA Vce Saturation (Max): 400mV Current Transfer Ratio (Min): 50% @ 5mA |
auf Bestellung 125122 Stücke: Lieferzeit 10-14 Tag (e) |
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FODM124 | onsemi |
Description: OPTOISO 3.75KV 1CH TRANS 4-SMDNumber of Channels: 1 Rise / Fall Time (Typ): 3µs, 3µs Voltage - Output (Max): 80V Supplier Device Package: 4-SMD Current Transfer Ratio (Max): 1200% @ 1mA Vce Saturation (Max): 400mV Current Transfer Ratio (Min): 100% @ 1mA Voltage - Isolation: 3750Vrms Current - Output / Channel: 80mA Input Type: DC Current - DC Forward (If) (Max): 50 mA Voltage - Forward (Vf) (Typ): 1.3V (Max) Operating Temperature: -40°C ~ 110°C Mounting Type: Surface Mount Output Type: Transistor Package / Case: 4-SMD, Gull Wing Packaging: Tube |
auf Bestellung 12977 Stücke: Lieferzeit 10-14 Tag (e) |
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FODM2705 | onsemi |
Description: OPTOISO 3.75KV TRANSISTOR 4SMDCurrent - DC Forward (If) (Max): 50 mA Number of Channels: 1 Part Status: Active Rise / Fall Time (Typ): 3µs, 3µs Voltage - Output (Max): 40V Supplier Device Package: 4-SMD Current Transfer Ratio (Max): 300% @ 5mA Vce Saturation (Max): 300mV Current Transfer Ratio (Min): 50% @ 5mA Voltage - Isolation: 3750Vrms Current - Output / Channel: 80mA Input Type: AC, DC Voltage - Forward (Vf) (Typ): 1.4V (Max) Operating Temperature: -40°C ~ 110°C Mounting Type: Surface Mount Output Type: Transistor Package / Case: 4-SMD, Gull Wing Packaging: Tube |
auf Bestellung 8481 Stücke: Lieferzeit 10-14 Tag (e) |
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FODM3063R2 | onsemi |
Description: OPTOISOLTR 3.75KV TRIAC 1CH 4SMDCurrent - DC Forward (If) (Max): 60 mA Voltage - Off State: 600 V Current - On State (It (RMS)) (Max): 70 mA Number of Channels: 1 Part Status: Active Current - LED Trigger (Ift) (Max): 5mA Static dV/dt (Min): 600V/µs Zero Crossing Circuit: Yes Supplier Device Package: 4-SMD Current - Hold (Ih): 300µA (Typ) Approval Agency: cUL, UL Voltage - Isolation: 3750Vrms Voltage - Forward (Vf) (Typ): 1.5V (Max) Operating Temperature: -40°C ~ 100°C Mounting Type: Surface Mount Output Type: Triac Package / Case: 4-SMD, Gull Wing Packaging: Tape & Reel (TR) |
auf Bestellung 35000 Stücke: Lieferzeit 10-14 Tag (e) |
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FQB9N50CFTM_WS | onsemi |
Description: MOSFET N-CH 500V 9A D2PAKPackaging: Tape & Reel (TR) Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 9A (Tc) Rds On (Max) @ Id, Vgs: 850mOhm @ 4.5A, 10V Power Dissipation (Max): 173W (Tc) Vgs(th) (Max) @ Id: 4V @ 250µA Supplier Device Package: TO-263 (D2Pak) Part Status: Obsolete Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±30V Drain to Source Voltage (Vdss): 500 V Gate Charge (Qg) (Max) @ Vgs: 35 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1030 pF @ 25 V |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||||||
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FQN1N50CTA | onsemi |
Description: MOSFET N-CH 500V 380MA TO92-3Input Capacitance (Ciss) (Max) @ Vds: 195 pF @ 25 V Gate Charge (Qg) (Max) @ Vgs: 6.4 nC @ 10 V Drain to Source Voltage (Vdss): 500 V Vgs (Max): ±30V Drive Voltage (Max Rds On, Min Rds On): 10V Part Status: Active Supplier Device Package: TO-92-3 Vgs(th) (Max) @ Id: 4V @ 250µA Power Dissipation (Max): 890mW (Ta), 2.08W (Tc) Rds On (Max) @ Id, Vgs: 6Ohm @ 190mA, 10V Current - Continuous Drain (Id) @ 25°C: 380mA (Tc) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Package / Case: TO-226-3, TO-92-3 (TO-226AA) Formed Leads Packaging: Tape & Box (TB) |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||||||
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FQT1N60CTF-WS | onsemi |
Description: MOSFET N-CH 600V 200MA SOT223-4Input Capacitance (Ciss) (Max) @ Vds: 170 pF @ 25 V Gate Charge (Qg) (Max) @ Vgs: 6.2 nC @ 10 V Drain to Source Voltage (Vdss): 600 V Vgs (Max): ±30V Drive Voltage (Max Rds On, Min Rds On): 10V Part Status: Active Supplier Device Package: SOT-223-4 Vgs(th) (Max) @ Id: 4V @ 250µA Power Dissipation (Max): 2.1W (Tc) Rds On (Max) @ Id, Vgs: 11.5Ohm @ 100mA, 10V Current - Continuous Drain (Id) @ 25°C: 200mA (Tc) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: TO-261-4, TO-261AA Packaging: Tape & Reel (TR) |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||||||
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FSBB15CH60C | onsemi |
Description: IGBT IPM 600V 15A 27-PWRDIP MODPackaging: Tube Package / Case: 27-PowerDIP Module (1.205", 30.60mm) Mounting Type: Through Hole Type: IGBT Configuration: 3 Phase Voltage - Isolation: 2500Vrms Current: 15 A Voltage: 600 V |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 60 Stücke Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||||||
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FSDM1265RBWDTU | onsemi |
Description: IC OFFLINE SW FLBACK TO220F-6LPower (Watts): 110 W Part Status: Obsolete Voltage - Start Up: 12 V Fault Protection: Current Limiting, Over Load, Over Temperature, Over Voltage Supplier Device Package: TO-220F-6L (Forming) Voltage - Supply (Vcc/Vdd): 8V ~ 20V Topology: Flyback Output Isolation: Isolated Voltage - Breakdown: 650V Internal Switch(s): Yes Frequency - Switching: 66kHz Duty Cycle: 82% Operating Temperature: -25°C ~ 85°C (TA) Mounting Type: Through Hole Package / Case: TO-220-6 Full Pack, Formed Leads Packaging: Tube |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||||||
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ISL9V5045S3ST | onsemi |
Description: IGBT 480V 51A TO263ABPower - Max: 300 W Voltage - Collector Emitter Breakdown (Max): 480 V Current - Collector (Ic) (Max): 51 A Part Status: Obsolete Gate Charge: 32 nC Test Condition: 300V, 1kOhm, 5V Td (on/off) @ 25°C: -/10.8µs Supplier Device Package: D²PAK (TO-263) Vce(on) (Max) @ Vge, Ic: 1.6V @ 4V, 10A Input Type: Logic Operating Temperature: -40°C ~ 175°C (TJ) Mounting Type: Surface Mount Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB Packaging: Tape & Reel (TR) |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||||||
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LM7809ACT | onsemi |
Description: IC REG LINEAR 9V 1A TO220-3Packaging: Tube Package / Case: TO-220-3 Output Type: Fixed Mounting Type: Through Hole Current - Output: 1A Operating Temperature: 0°C ~ 125°C Output Configuration: Positive Current - Quiescent (Iq): 8 mA Voltage - Input (Max): 35V Number of Regulators: 1 Supplier Device Package: TO-220-3 Voltage - Output (Min/Fixed): 9V Part Status: Obsolete PSRR: 71dB (120Hz) Voltage Dropout (Max): 2V @ 1A (Typ) Protection Features: Over Temperature, Short Circuit |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||||||
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LM7812ACT | onsemi |
Description: IC REG LINEAR 12V 1A TO220-3Packaging: Tube Package / Case: TO-220-3 Output Type: Fixed Mounting Type: Through Hole Current - Output: 1A Operating Temperature: 0°C ~ 125°C Output Configuration: Positive Current - Quiescent (Iq): 8 mA Voltage - Input (Max): 35V Number of Regulators: 1 Supplier Device Package: TO-220-3 Voltage - Output (Min/Fixed): 12V Part Status: Obsolete PSRR: 71dB (120Hz) Voltage Dropout (Max): 2V @ 1A (Typ) Protection Features: Over Temperature, Short Circuit |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||||||
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LM7815ACT | onsemi |
Description: IC REG LINEAR 15V 1A TO220-3Packaging: Tube Package / Case: TO-220-3 Output Type: Fixed Mounting Type: Through Hole Current - Output: 1A Operating Temperature: 0°C ~ 125°C Output Configuration: Positive Current - Quiescent (Iq): 8 mA Voltage - Input (Max): 35V Number of Regulators: 1 Supplier Device Package: TO-220-3 Voltage - Output (Min/Fixed): 15V Part Status: Obsolete PSRR: 70dB (120Hz) Voltage Dropout (Max): 2V @ 1A (Typ) Protection Features: Over Temperature, Short Circuit |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||||||
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LM7824CT | onsemi |
Description: IC REG LINEAR 24V 1A TO220-3Packaging: Tube Package / Case: TO-220-3 Output Type: Fixed Mounting Type: Through Hole Current - Output: 1A Operating Temperature: -40°C ~ 125°C Output Configuration: Positive Current - Quiescent (Iq): 8 mA Voltage - Input (Max): 40V Number of Regulators: 1 Supplier Device Package: TO-220-3 Voltage - Output (Min/Fixed): 24V Part Status: Obsolete PSRR: 67dB (120Hz) Voltage Dropout (Max): 2V @ 1A (Typ) Protection Features: Over Temperature, Short Circuit |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||||||
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MOC8050SR2VM | onsemi |
Description: OPTOISOLTR 4.17KV 1CH DARL 6-SMDPackaging: Tape & Reel (TR) Package / Case: 6-SMD, Gull Wing Output Type: Darlington Mounting Type: Surface Mount Operating Temperature: -40°C ~ 100°C Voltage - Forward (Vf) (Typ): 1.18V Input Type: DC Current - Output / Channel: 150mA Voltage - Isolation: 4170Vrms Current Transfer Ratio (Min): 500% @ 10mA Supplier Device Package: 6-SMD Voltage - Output (Max): 80V Turn On / Turn Off Time (Typ): 8.5µs, 95µs Part Status: Active Number of Channels: 1 Current - DC Forward (If) (Max): 60 mA |
auf Bestellung 22000 Stücke: Lieferzeit 10-14 Tag (e) |
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4N33SR2M | onsemi |
Description: OPTOISO 4.17KV DARL W/BASE 6-SMDPackaging: Cut Tape (CT) Package / Case: 6-SMD, Gull Wing Output Type: Darlington with Base Mounting Type: Surface Mount Operating Temperature: -40°C ~ 100°C Voltage - Forward (Vf) (Typ): 1.2V Input Type: DC Current - Output / Channel: 150mA Voltage - Isolation: 4170Vrms Current Transfer Ratio (Min): 500% @ 10mA Vce Saturation (Max): 1V Supplier Device Package: 6-SMD Voltage - Output (Max): 30V Turn On / Turn Off Time (Typ): 5µs, 100µs (Max) Part Status: Active Number of Channels: 1 Current - DC Forward (If) (Max): 80 mA |
auf Bestellung 3240 Stücke: Lieferzeit 10-14 Tag (e) |
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FAN7362MX | onsemi |
Description: IC GATE DRVR HIGH-SIDE 8SOPDigiKey Programmable: Not Verified Part Status: Last Time Buy Current - Peak Output (Source, Sink): 250mA, 500mA Logic Voltage - VIL, VIH: 0.8V, 2.9V Gate Type: IGBT, N-Channel MOSFET Number of Drivers: 1 Driven Configuration: High-Side Channel Type: Single Rise / Fall Time (Typ): 70ns, 30ns Supplier Device Package: 8-SOIC High Side Voltage - Max (Bootstrap): 600 V Input Type: Non-Inverting Voltage - Supply: 10V ~ 20V Operating Temperature: -40°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 8-SOIC (0.154", 3.90mm Width) Packaging: Cut Tape (CT) |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||||||
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FAN73832MX | onsemi |
Description: IC GATE DRVR HALF-BRIDGE 8SOICPackaging: Cut Tape (CT) Package / Case: 8-SOIC (0.154", 3.90mm Width) Mounting Type: Surface Mount Operating Temperature: -40°C ~ 150°C (TJ) Voltage - Supply: 15V ~ 20V Input Type: Non-Inverting High Side Voltage - Max (Bootstrap): 600 V Supplier Device Package: 8-SOIC Rise / Fall Time (Typ): 50ns, 30ns Channel Type: Synchronous Driven Configuration: Half-Bridge Number of Drivers: 2 Gate Type: IGBT, MOSFET (N-Channel) Logic Voltage - VIL, VIH: 1.2V, 2.9V Current - Peak Output (Source, Sink): 350mA, 650mA Part Status: Last Time Buy DigiKey Programmable: Not Verified |
auf Bestellung 388 Stücke: Lieferzeit 10-14 Tag (e) |
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FAN7529MX | onsemi |
Description: IC PFC CTRLR CRM/TRANSITION 8SOPCurrent - Startup: 40 µA Part Status: Not For New Designs Supplier Device Package: 8-SOIC Mode: Critical Conduction (CRM), Discontinuous (Transition) Voltage - Supply: 12V ~ 22V Operating Temperature: -40°C ~ 125°C Mounting Type: Surface Mount Package / Case: 8-SOIC (0.154", 3.90mm Width) Packaging: Cut Tape (CT) |
auf Bestellung 2996 Stücke: Lieferzeit 10-14 Tag (e) |
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FDB33N25TM | onsemi |
Description: MOSFET N-CH 250V 33A D2PAKPackaging: Cut Tape (CT) Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 33A (Tc) Rds On (Max) @ Id, Vgs: 94mOhm @ 16.5A, 10V Power Dissipation (Max): 235W (Tc) Vgs(th) (Max) @ Id: 5V @ 250µA Supplier Device Package: TO-263 (D2Pak) Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±30V Drain to Source Voltage (Vdss): 250 V Gate Charge (Qg) (Max) @ Vgs: 48 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 2135 pF @ 25 V |
auf Bestellung 13928 Stücke: Lieferzeit 10-14 Tag (e) |
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FDB5800 | onsemi |
Description: MOSFET N-CH 60V 14A/80A D2PAKPackaging: Cut Tape (CT) Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 14A (Ta), 80A (Tc) Rds On (Max) @ Id, Vgs: 6mOhm @ 80A, 10V Power Dissipation (Max): 242W (Tc) Vgs(th) (Max) @ Id: 2.5V @ 250µA Supplier Device Package: TO-263 (D2Pak) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 60 V Gate Charge (Qg) (Max) @ Vgs: 135 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 6625 pF @ 15 V |
auf Bestellung 4355 Stücke: Lieferzeit 10-14 Tag (e) |
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FDB8444 | onsemi |
Description: MOSFET N-CH 40V 70A TO263ABOperating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Packaging: Cut Tape (CT) Input Capacitance (Ciss) (Max) @ Vds: 8035 pF @ 25 V Gate Charge (Qg) (Max) @ Vgs: 128 nC @ 10 V Drain to Source Voltage (Vdss): 40 V Vgs (Max): ±20V Drive Voltage (Max Rds On, Min Rds On): 10V Supplier Device Package: TO-263 (D2Pak) Vgs(th) (Max) @ Id: 4V @ 250µA Power Dissipation (Max): 167W (Tc) Rds On (Max) @ Id, Vgs: 5.5mOhm @ 70A, 10V Current - Continuous Drain (Id) @ 25°C: 70A (Tc) FET Type: N-Channel Technology: MOSFET (Metal Oxide) |
auf Bestellung 271 Stücke: Lieferzeit 10-14 Tag (e) |
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FDB8860 | onsemi |
Description: MOSFET N-CH 30V 80A TO263AB |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||||||
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FDC658AP | onsemi |
Description: MOSFET P-CH 30V 4A SUPERSOT6Packaging: Cut Tape (CT) Package / Case: SOT-23-6 Thin, TSOT-23-6 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 4A (Ta) Rds On (Max) @ Id, Vgs: 50mOhm @ 4A, 10V Power Dissipation (Max): 1.6W (Ta) Vgs(th) (Max) @ Id: 3V @ 250µA Supplier Device Package: SuperSOT™-6 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±25V Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 8.1 nC @ 5 V Input Capacitance (Ciss) (Max) @ Vds: 470 pF @ 15 V |
auf Bestellung 27086 Stücke: Lieferzeit 10-14 Tag (e) |
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FDD6637 | onsemi |
Description: MOSFET P-CH 35V 13A/55A DPAKPackaging: Cut Tape (CT) Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 155°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 13A (Ta), 55A (Tc) Rds On (Max) @ Id, Vgs: 11.6mOhm @ 14A, 10V Power Dissipation (Max): 3.1W (Ta), 57W (Tc) Vgs(th) (Max) @ Id: 3V @ 250µA Supplier Device Package: TO-252AA Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±25V Drain to Source Voltage (Vdss): 35 V Gate Charge (Qg) (Max) @ Vgs: 63 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 2370 pF @ 20 V |
auf Bestellung 7448 Stücke: Lieferzeit 10-14 Tag (e) |
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FDD8444 | onsemi |
Description: MOSFET N-CH 40V 145A TO252AAGate Charge (Qg) (Max) @ Vgs: 116 nC @ 10 V Drain to Source Voltage (Vdss): 40 V Vgs (Max): ±20V Drive Voltage (Max Rds On, Min Rds On): 10V Part Status: Active Supplier Device Package: TO-252AA Vgs(th) (Max) @ Id: 4V @ 250µA Power Dissipation (Max): 153W (Tc) Rds On (Max) @ Id, Vgs: 5.2mOhm @ 50A, 10V Current - Continuous Drain (Id) @ 25°C: 145A (Tc) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Packaging: Cut Tape (CT) Input Capacitance (Ciss) (Max) @ Vds: 6195 pF @ 25 V |
auf Bestellung 5238 Stücke: Lieferzeit 10-14 Tag (e) |
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FDD8445 | onsemi |
Description: MOSFET N-CH 40V 70A TO252AAInput Capacitance (Ciss) (Max) @ Vds: 4050 pF @ 25 V Gate Charge (Qg) (Max) @ Vgs: 59 nC @ 10 V Drain to Source Voltage (Vdss): 40 V Vgs (Max): ±20V Drive Voltage (Max Rds On, Min Rds On): 10V Supplier Device Package: TO-252AA Vgs(th) (Max) @ Id: 4V @ 250µA Power Dissipation (Max): 79W (Tc) Rds On (Max) @ Id, Vgs: 8.7mOhm @ 50A, 10V Current - Continuous Drain (Id) @ 25°C: 70A (Tc) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Packaging: Cut Tape (CT) |
auf Bestellung 2305 Stücke: Lieferzeit 10-14 Tag (e) |
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FDMA420NZ | onsemi |
Description: MOSFET N-CH 20V 5.7A 6MICROFETInput Capacitance (Ciss) (Max) @ Vds: 935 pF @ 10 V Gate Charge (Qg) (Max) @ Vgs: 12 nC @ 4.5 V Drain to Source Voltage (Vdss): 20 V Vgs (Max): ±12V Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V Supplier Device Package: 6-MicroFET (2x2) Vgs(th) (Max) @ Id: 1.5V @ 250µA Power Dissipation (Max): 2.4W (Ta) Rds On (Max) @ Id, Vgs: 30mOhm @ 5.7A, 4.5V Current - Continuous Drain (Id) @ 25°C: 5.7A (Ta) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 6-WDFN Exposed Pad Packaging: Cut Tape (CT) |
auf Bestellung 6250 Stücke: Lieferzeit 10-14 Tag (e) |
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FDMA430NZ | onsemi |
Description: MOSFET N-CH 30V 5A 6MICROFETInput Capacitance (Ciss) (Max) @ Vds: 800 pF @ 10 V Gate Charge (Qg) (Max) @ Vgs: 11 nC @ 4.5 V Drain to Source Voltage (Vdss): 30 V Vgs (Max): ±12V Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V Supplier Device Package: 6-MicroFET (2x2) Vgs(th) (Max) @ Id: 1.5V @ 250µA Power Dissipation (Max): 2.4W (Ta) Rds On (Max) @ Id, Vgs: 40mOhm @ 5A, 4.5V Current - Continuous Drain (Id) @ 25°C: 5A (Ta) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 6-WDFN Exposed Pad Packaging: Cut Tape (CT) |
auf Bestellung 33000 Stücke: Lieferzeit 10-14 Tag (e) |
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FDMB3800N | onsemi |
Description: MOSFET 2N-CH 30V 8MLP MICROFETPackaging: Cut Tape (CT) Package / Case: 8-PowerWDFN Mounting Type: Surface Mount Configuration: 2 N-Channel (Dual) Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 750mW Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 4.8A Input Capacitance (Ciss) (Max) @ Vds: 465pF @ 15V Rds On (Max) @ Id, Vgs: 40mOhm @ 4.8A, 10V Gate Charge (Qg) (Max) @ Vgs: 5.6nC @ 5V FET Feature: Logic Level Gate Vgs(th) (Max) @ Id: 3V @ 250µA Supplier Device Package: 8-MLP, MicroFET (3x1.9) Part Status: Active |
auf Bestellung 10662 Stücke: Lieferzeit 10-14 Tag (e) |
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FDS4897C | onsemi |
Description: MOSFET N/P-CH 40V 6.2A 8SOICSupplier Device Package: 8-SOIC Vgs(th) (Max) @ Id: 3V @ 250µA FET Feature: Logic Level Gate Gate Charge (Qg) (Max) @ Vgs: 20nC @ 10V Rds On (Max) @ Id, Vgs: 29mOhm @ 6.2A, 10V Input Capacitance (Ciss) (Max) @ Vds: 760pF @ 20V Current - Continuous Drain (Id) @ 25°C: 6.2A, 4.4A Drain to Source Voltage (Vdss): 40V Power - Max: 900mW Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 150°C (TJ) Configuration: N and P-Channel Mounting Type: Surface Mount Package / Case: 8-SOIC (0.154", 3.90mm Width) Packaging: Cut Tape (CT) |
Produkt ist nicht verfügbar |
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FDS5692Z | onsemi |
Description: MOSFET N-CH 50V 5.8A 8SOICInput Capacitance (Ciss) (Max) @ Vds: 1025 pF @ 25 V Gate Charge (Qg) (Max) @ Vgs: 25 nC @ 10 V Drain to Source Voltage (Vdss): 50 V Vgs (Max): ±20V Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Part Status: Obsolete Supplier Device Package: 8-SOIC Vgs(th) (Max) @ Id: 3V @ 250µA Power Dissipation (Max): 2.5W (Ta) Rds On (Max) @ Id, Vgs: 24mOhm @ 5.8A, 10V Current - Continuous Drain (Id) @ 25°C: 5.8A (Ta) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 8-SOIC (0.154", 3.90mm Width) Packaging: Cut Tape (CT) |
Produkt ist nicht verfügbar |
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FDS6673BZ | onsemi |
Description: MOSFET P-CH 30V 14.5A 8SOICPackaging: Cut Tape (CT) Package / Case: 8-SOIC (0.154", 3.90mm Width) Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 14.5A (Ta) Rds On (Max) @ Id, Vgs: 7.8mOhm @ 14.5A, 10V Power Dissipation (Max): 2.5W (Ta) Vgs(th) (Max) @ Id: 3V @ 250µA Supplier Device Package: 8-SOIC Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±25V Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 124 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 4700 pF @ 15 V |
auf Bestellung 4933 Stücke: Lieferzeit 10-14 Tag (e) |
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FDS6675BZ | onsemi |
Description: MOSFET P-CH 30V 11A 8SOICPackaging: Cut Tape (CT) Package / Case: 8-SOIC (0.154", 3.90mm Width) Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 11A (Ta) Rds On (Max) @ Id, Vgs: 13mOhm @ 11A, 10V Power Dissipation (Max): 2.5W (Ta) Vgs(th) (Max) @ Id: 3V @ 250µA Supplier Device Package: 8-SOIC Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±25V Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 62 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 2470 pF @ 15 V |
auf Bestellung 8374 Stücke: Lieferzeit 10-14 Tag (e) |
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FDS8690 | onsemi |
Description: MOSFET N-CH 30V 14A 8SOICInput Capacitance (Ciss) (Max) @ Vds: 1680 pF @ 15 V Gate Charge (Qg) (Max) @ Vgs: 27 nC @ 10 V Drain to Source Voltage (Vdss): 30 V Vgs (Max): ±20V Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Part Status: Obsolete Supplier Device Package: 8-SOIC Vgs(th) (Max) @ Id: 3V @ 250µA Power Dissipation (Max): 2.5W (Ta) Rds On (Max) @ Id, Vgs: 7.6mOhm @ 14A, 10V Current - Continuous Drain (Id) @ 25°C: 14A (Ta) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 8-SOIC (0.154", 3.90mm Width) Packaging: Cut Tape (CT) |
auf Bestellung 334 Stücke: Lieferzeit 10-14 Tag (e) |
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FDY100PZ | onsemi |
Description: MOSFET P-CH 20V 350MA SC89-3Input Capacitance (Ciss) (Max) @ Vds: 100 pF @ 10 V Gate Charge (Qg) (Max) @ Vgs: 1.4 nC @ 4.5 V Drain to Source Voltage (Vdss): 20 V Vgs (Max): ±8V Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V Part Status: Last Time Buy Supplier Device Package: SC-89-3 Vgs(th) (Max) @ Id: 1.5V @ 250µA Power Dissipation (Max): 625mW (Ta) Rds On (Max) @ Id, Vgs: 1.2Ohm @ 350mA, 4.5V Current - Continuous Drain (Id) @ 25°C: 350mA (Ta) FET Type: P-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: SC-89, SOT-490 Packaging: Cut Tape (CT) |
auf Bestellung 13462 Stücke: Lieferzeit 10-14 Tag (e) |
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FDY101PZ | onsemi |
Description: MOSFET P-CH 20V 150MA SC89-3Input Capacitance (Ciss) (Max) @ Vds: 100 pF @ 10 V Gate Charge (Qg) (Max) @ Vgs: 1.4 nC @ 4.5 V Drain to Source Voltage (Vdss): 20 V Vgs (Max): ±8V Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4.5V Part Status: Active Supplier Device Package: SC-89-3 Vgs(th) (Max) @ Id: 1.5V @ 250µA Power Dissipation (Max): 625mW (Ta) Rds On (Max) @ Id, Vgs: 8Ohm @ 150mA, 4.5V Current - Continuous Drain (Id) @ 25°C: 150mA (Ta) FET Type: P-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: SC-89, SOT-490 Packaging: Cut Tape (CT) |
auf Bestellung 877 Stücke: Lieferzeit 10-14 Tag (e) |
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FDY3000NZ | onsemi |
Description: MOSFET 2N-CH 20V 600MA SOT563FSupplier Device Package: SOT-563F Vgs(th) (Max) @ Id: 1.3V @ 250µA FET Feature: Logic Level Gate Gate Charge (Qg) (Max) @ Vgs: 1.1nC @ 4.5V Rds On (Max) @ Id, Vgs: 700mOhm @ 600mA, 4.5V Input Capacitance (Ciss) (Max) @ Vds: 60pF @ 10V Current - Continuous Drain (Id) @ 25°C: 600mA Drain to Source Voltage (Vdss): 20V Power - Max: 446mW Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 150°C (TJ) Configuration: 2 N-Channel (Dual) Mounting Type: Surface Mount Package / Case: SOT-563, SOT-666 Packaging: Cut Tape (CT) |
auf Bestellung 1499 Stücke: Lieferzeit 10-14 Tag (e) |
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FDY300NZ | onsemi |
Description: MOSFET N-CH 20V 600MA SC89-3 |
Produkt ist nicht verfügbar |
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FDY301NZ | onsemi |
Description: MOSFET N-CH 20V 200MA SC89-3FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: SC-89, SOT-490 Packaging: Cut Tape (CT) Input Capacitance (Ciss) (Max) @ Vds: 60 pF @ 10 V Gate Charge (Qg) (Max) @ Vgs: 1.1 nC @ 4.5 V Drain to Source Voltage (Vdss): 20 V Vgs (Max): ±12V Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4.5V Part Status: Last Time Buy Supplier Device Package: SC-89-3 Vgs(th) (Max) @ Id: 1.5V @ 250µA Power Dissipation (Max): 625mW (Ta) Rds On (Max) @ Id, Vgs: 5Ohm @ 200mA, 4.5V Current - Continuous Drain (Id) @ 25°C: 200mA (Ta) |
auf Bestellung 4759 Stücke: Lieferzeit 10-14 Tag (e) |
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FOD3180SDV | onsemi |
Description: OPTOISO 5KV 1CH GATE DVR 8SMDPackaging: Cut Tape (CT) Package / Case: 8-SMD, Gull Wing Mounting Type: Surface Mount Operating Temperature: -40°C ~ 100°C Voltage - Forward (Vf) (Typ): 1.43V Current - Peak Output: 2.5A Technology: Optical Coupling Current - Output High, Low: 2A, 2A Voltage - Isolation: 5000Vrms Approval Agency: cUL, UL, VDE Supplier Device Package: 8-SMD Rise / Fall Time (Typ): 75ns, 55ns Common Mode Transient Immunity (Min): 15kV/µs Propagation Delay tpLH / tpHL (Max): 200ns, 200ns Pulse Width Distortion (Max): 65ns Part Status: Active Number of Channels: 1 Current - DC Forward (If) (Max): 25 mA Voltage - Output Supply: 10V ~ 20V |
auf Bestellung 546 Stücke: Lieferzeit 10-14 Tag (e) |
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FOD420SD | onsemi |
Description: OPTOISOLATOR 5KV TRIAC 6DIP SMDCurrent - DC Forward (If) (Max): 30 mA Voltage - Off State: 600 V Number of Channels: 1 Part Status: Active Current - LED Trigger (Ift) (Max): 2mA Static dV/dt (Min): 10kV/µs Zero Crossing Circuit: No Supplier Device Package: 6-SMD Turn On Time: 60µs Current - Hold (Ih): 500µA Approval Agency: cUL, FIMKO, UL Voltage - Isolation: 5000Vrms Voltage - Forward (Vf) (Typ): 1.28V Operating Temperature: -55°C ~ 100°C Mounting Type: Surface Mount Output Type: Triac Package / Case: 6-SMD, Gull Wing Packaging: Cut Tape (CT) |
auf Bestellung 5145 Stücke: Lieferzeit 10-14 Tag (e) |
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FODM3063R2 | onsemi |
Description: OPTOISOLTR 3.75KV TRIAC 1CH 4SMDCurrent - DC Forward (If) (Max): 60 mA Voltage - Off State: 600 V Current - On State (It (RMS)) (Max): 70 mA Number of Channels: 1 Part Status: Active Current - LED Trigger (Ift) (Max): 5mA Static dV/dt (Min): 600V/µs Zero Crossing Circuit: Yes Supplier Device Package: 4-SMD Current - Hold (Ih): 300µA (Typ) Approval Agency: cUL, UL Voltage - Isolation: 3750Vrms Voltage - Forward (Vf) (Typ): 1.5V (Max) Operating Temperature: -40°C ~ 100°C Mounting Type: Surface Mount Output Type: Triac Package / Case: 4-SMD, Gull Wing Packaging: Cut Tape (CT) |
auf Bestellung 35789 Stücke: Lieferzeit 10-14 Tag (e) |
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FPF2125 | onsemi |
Description: IC PWR SWITCH P-CHAN 1:1 SOT23-5Fault Protection: Current Limiting (Adjustable), Over Temperature, Reverse Current, UVLO Supplier Device Package: SOT-23-5 Ratio - Input:Output: 1:1 Current - Output (Max): 1.5A Packaging: Cut Tape (CT) Mounting Type: Surface Mount Output Type: P-Channel Package / Case: SC-74A, SOT-753 Part Status: Obsolete Voltage - Supply (Vcc/Vdd): Not Required Voltage - Load: 1.8V ~ 5.5V Input Type: Non-Inverting Rds On (Typ): 125mOhm Output Configuration: High Side Operating Temperature: -40°C ~ 85°C (TA) Switch Type: General Purpose Interface: On/Off Number of Outputs: 1 |
Produkt ist nicht verfügbar |
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FQN1N50CTA | onsemi |
Description: MOSFET N-CH 500V 380MA TO92-3Input Capacitance (Ciss) (Max) @ Vds: 195 pF @ 25 V Gate Charge (Qg) (Max) @ Vgs: 6.4 nC @ 10 V Drain to Source Voltage (Vdss): 500 V Vgs (Max): ±30V Drive Voltage (Max Rds On, Min Rds On): 10V Part Status: Active Supplier Device Package: TO-92-3 Vgs(th) (Max) @ Id: 4V @ 250µA Power Dissipation (Max): 890mW (Ta), 2.08W (Tc) Rds On (Max) @ Id, Vgs: 6Ohm @ 190mA, 10V Current - Continuous Drain (Id) @ 25°C: 380mA (Tc) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Package / Case: TO-226-3, TO-92-3 (TO-226AA) Formed Leads Packaging: Cut Tape (CT) |
auf Bestellung 139 Stücke: Lieferzeit 10-14 Tag (e) |
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FQT1N60CTF-WS | onsemi |
Description: MOSFET N-CH 600V 200MA SOT223-4Input Capacitance (Ciss) (Max) @ Vds: 170 pF @ 25 V Gate Charge (Qg) (Max) @ Vgs: 6.2 nC @ 10 V Drain to Source Voltage (Vdss): 600 V Vgs (Max): ±30V Drive Voltage (Max Rds On, Min Rds On): 10V Part Status: Active Supplier Device Package: SOT-223-4 Vgs(th) (Max) @ Id: 4V @ 250µA Power Dissipation (Max): 2.1W (Tc) Rds On (Max) @ Id, Vgs: 11.5Ohm @ 100mA, 10V Current - Continuous Drain (Id) @ 25°C: 200mA (Tc) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: TO-261-4, TO-261AA Packaging: Cut Tape (CT) |
Produkt ist nicht verfügbar |
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ISL9V5045S3ST | onsemi |
Description: IGBT 480V 51A TO263ABPower - Max: 300 W Voltage - Collector Emitter Breakdown (Max): 480 V Current - Collector (Ic) (Max): 51 A Part Status: Obsolete Gate Charge: 32 nC Test Condition: 300V, 1kOhm, 5V Td (on/off) @ 25°C: -/10.8µs Supplier Device Package: D²PAK (TO-263) Vce(on) (Max) @ Vge, Ic: 1.6V @ 4V, 10A Input Type: Logic Operating Temperature: -40°C ~ 175°C (TJ) Mounting Type: Surface Mount Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB Packaging: Cut Tape (CT) |
Produkt ist nicht verfügbar |
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MOC8050SR2VM | onsemi |
Description: OPTOISOLTR 4.17KV 1CH DARL 6-SMDPackaging: Cut Tape (CT) Package / Case: 6-SMD, Gull Wing Output Type: Darlington Mounting Type: Surface Mount Operating Temperature: -40°C ~ 100°C Voltage - Forward (Vf) (Typ): 1.18V Input Type: DC Current - Output / Channel: 150mA Voltage - Isolation: 4170Vrms Current Transfer Ratio (Min): 500% @ 10mA Supplier Device Package: 6-SMD Voltage - Output (Max): 80V Turn On / Turn Off Time (Typ): 8.5µs, 95µs Part Status: Active Number of Channels: 1 Current - DC Forward (If) (Max): 60 mA |
auf Bestellung 22265 Stücke: Lieferzeit 10-14 Tag (e) |
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| CAT4101TV-T75 | onsemi |
Description: IC LED DRVR LIN PWM 1A D2PAK-5Packaging: Tape & Reel (TR) Package / Case: TO-263-6, D2PAK (5 Leads + Tab), TO-263BA Voltage - Output: 25V Mounting Type: Surface Mount Number of Outputs: 1 Type: Linear Operating Temperature: -40°C ~ 85°C (TA) Applications: Lighting Current - Output / Channel: 1A Internal Switch(s): Yes Supplier Device Package: TO-263 (D2Pak) Dimming: PWM Voltage - Supply (Min): 3V Voltage - Supply (Max): 5.5V |
Produkt ist nicht verfügbar |
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CAT4101TV-T75 | onsemi |
Description: IC LED DRVR LIN PWM 1A D2PAK-5Packaging: Cut Tape (CT) Package / Case: TO-263-6, D²Pak (5 Leads + Tab), TO-263BA Voltage - Output: 25V Mounting Type: Surface Mount Number of Outputs: 1 Type: Linear Operating Temperature: -40°C ~ 85°C (TA) Applications: Lighting Current - Output / Channel: 1A Internal Switch(s): Yes Supplier Device Package: D²PAK-5 (TO-263-5) Dimming: PWM Voltage - Supply (Min): 3V Voltage - Supply (Max): 5.5V |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||||||
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FDB047N10 | onsemi |
Description: MOSFET N-CH 100V 120A D2PAKInput Capacitance (Ciss) (Max) @ Vds: 15265 pF @ 25 V Gate Charge (Qg) (Max) @ Vgs: 210 nC @ 10 V Drain to Source Voltage (Vdss): 100 V Vgs (Max): ±20V Drive Voltage (Max Rds On, Min Rds On): 10V Part Status: Active Supplier Device Package: TO-263 (D2Pak) Vgs(th) (Max) @ Id: 4.5V @ 250µA Power Dissipation (Max): 375W (Tc) Rds On (Max) @ Id, Vgs: 4.7mOhm @ 75A, 10V Current - Continuous Drain (Id) @ 25°C: 120A (Tc) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Packaging: Tape & Reel (TR) |
auf Bestellung 1600 Stücke: Lieferzeit 10-14 Tag (e) |
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FDMS8880 | onsemi |
Description: MOSFET N-CH 30V 13.5A/21A 8PQFNInput Capacitance (Ciss) (Max) @ Vds: 1585 pF @ 15 V Gate Charge (Qg) (Max) @ Vgs: 33 nC @ 10 V Drain to Source Voltage (Vdss): 30 V Vgs (Max): ±20V Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Supplier Device Package: 8-PQFN (5x6) Vgs(th) (Max) @ Id: 2.5V @ 250µA Power Dissipation (Max): 2.5W (Ta), 42W (Tc) Rds On (Max) @ Id, Vgs: 8.5mOhm @ 13.5A, 10V Current - Continuous Drain (Id) @ 25°C: 13.5A (Ta), 21A (Tc) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 8-PowerTDFN Packaging: Tape & Reel (TR) |
Produkt ist nicht verfügbar |
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FFPF08S60SNTU | onsemi |
Description: DIODE GEN PURP 600V 8A TO220F-2LCurrent - Reverse Leakage @ Vr: 100 µA @ 600 V Voltage - Forward (Vf) (Max) @ If: 3.4 V @ 8 A Voltage - DC Reverse (Vr) (Max): 600 V Part Status: Obsolete Operating Temperature - Junction: -65°C ~ 150°C Supplier Device Package: TO-220F-2L Current - Average Rectified (Io): 8A Technology: Avalanche Reverse Recovery Time (trr): 25 ns Speed: Fast Recovery =< 500ns, > 200mA (Io) Mounting Type: Through Hole Package / Case: TO-220-2 Full Pack Packaging: Tube |
Produkt ist nicht verfügbar |
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FOD410 | onsemi |
Description: OPTOISOLATOR 5KV TRIAC 6DIPCurrent - DC Forward (If) (Max): 30 mA Voltage - Off State: 600 V Number of Channels: 1 Part Status: Active Current - LED Trigger (Ift) (Max): 2mA Static dV/dt (Min): 10kV/µs Zero Crossing Circuit: Yes Supplier Device Package: 6-DIP Turn On Time: 60µs Current - Hold (Ih): 500µA Approval Agency: CSA, UL Voltage - Isolation: 5000Vrms Voltage - Forward (Vf) (Typ): 1.25V Operating Temperature: -55°C ~ 100°C Mounting Type: Through Hole Output Type: Triac Package / Case: 6-DIP (0.300", 7.62mm) Packaging: Tube |
auf Bestellung 1825 Stücke: Lieferzeit 10-14 Tag (e) |
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FOD4108 | onsemi |
Description: OPTOISOLATOR 5KV TRIAC 6DIPCurrent - DC Forward (If) (Max): 30 mA Voltage - Off State: 800 V Number of Channels: 1 Part Status: Active Current - LED Trigger (Ift) (Max): 2mA Static dV/dt (Min): 10kV/µs Zero Crossing Circuit: Yes Supplier Device Package: 6-DIP Turn On Time: 60µs Current - Hold (Ih): 500µA Approval Agency: CSA, UL Voltage - Isolation: 5000Vrms Voltage - Forward (Vf) (Typ): 1.25V Operating Temperature: -55°C ~ 100°C Mounting Type: Through Hole Output Type: Triac Package / Case: 6-DIP (0.300", 7.62mm) Packaging: Tube |
auf Bestellung 19142 Stücke: Lieferzeit 10-14 Tag (e) |
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FPF1003A | onsemi |
Description: IC PWR SWITCH P-CHAN 1:1 6WLCSPSupplier Device Package: 6-WLCSP (0.96x1.66) Ratio - Input:Output: 1:1 Current - Output (Max): 2A Voltage - Supply (Vcc/Vdd): Not Required Voltage - Load: 1.2V ~ 5.5V Input Type: Non-Inverting Rds On (Typ): 20mOhm Output Configuration: High Side Operating Temperature: -40°C ~ 85°C (TA) Switch Type: General Purpose Interface: On/Off Number of Outputs: 1 Mounting Type: Surface Mount Output Type: P-Channel Package / Case: 6-UFBGA, WLCSP Features: Slew Rate Controlled Packaging: Tape & Reel (TR) |
auf Bestellung 3000 Stücke: Lieferzeit 10-14 Tag (e) |
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FSA642UMX | onsemi |
Description: IC SWITCH 3PDT 24UMLP Packaging: Tape & Reel (TR) Package / Case: 24-UFQFN Mounting Type: Surface Mount Operating Temperature: -40°C ~ 85°C (TA) Applications: MIPI On-State Resistance (Max): 14Ohm -3db Bandwidth: 1GHz Supplier Device Package: 24-UMLP (3.4x2.5) Voltage - Supply, Single (V+): 2.65V ~ 4.3V Switch Circuit: 3PDT Part Status: Obsolete Number of Channels: 1 |
Produkt ist nicht verfügbar |
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FDB047N10 | onsemi |
Description: MOSFET N-CH 100V 120A D2PAKInput Capacitance (Ciss) (Max) @ Vds: 15265 pF @ 25 V Gate Charge (Qg) (Max) @ Vgs: 210 nC @ 10 V Drain to Source Voltage (Vdss): 100 V Vgs (Max): ±20V Drive Voltage (Max Rds On, Min Rds On): 10V Part Status: Active Supplier Device Package: TO-263 (D2Pak) Vgs(th) (Max) @ Id: 4.5V @ 250µA Power Dissipation (Max): 375W (Tc) Rds On (Max) @ Id, Vgs: 4.7mOhm @ 75A, 10V Current - Continuous Drain (Id) @ 25°C: 120A (Tc) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Packaging: Cut Tape (CT) |
auf Bestellung 1990 Stücke: Lieferzeit 10-14 Tag (e) |
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FPF1003A | onsemi |
Description: IC PWR SWITCH P-CHAN 1:1 6WLCSPSupplier Device Package: 6-WLCSP (0.96x1.66) Ratio - Input:Output: 1:1 Current - Output (Max): 2A Voltage - Supply (Vcc/Vdd): Not Required Voltage - Load: 1.2V ~ 5.5V Input Type: Non-Inverting Rds On (Typ): 20mOhm Output Configuration: High Side Operating Temperature: -40°C ~ 85°C (TA) Switch Type: General Purpose Interface: On/Off Number of Outputs: 1 Mounting Type: Surface Mount Output Type: P-Channel Package / Case: 6-UFBGA, WLCSP Features: Slew Rate Controlled Packaging: Cut Tape (CT) |
auf Bestellung 4802 Stücke: Lieferzeit 10-14 Tag (e) |
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| FOD420TV |
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Hersteller: onsemi
Description: OPTOISOLATOR 5KV TRIAC 6DIP
Voltage - Isolation: 5000Vrms
Voltage - Forward (Vf) (Typ): 1.28V
Operating Temperature: -55°C ~ 100°C
Mounting Type: Through Hole
Output Type: Triac
Package / Case: 6-DIP (0.400", 10.16mm)
Packaging: Tube
Current - DC Forward (If) (Max): 30 mA
Voltage - Off State: 600 V
Number of Channels: 1
Part Status: Active
Current - LED Trigger (Ift) (Max): 2mA
Static dV/dt (Min): 10kV/µs
Zero Crossing Circuit: No
Supplier Device Package: 6-DIP
Turn On Time: 60µs
Current - Hold (Ih): 500µA
Approval Agency: cUL, FIMKO, UL, VDE
Description: OPTOISOLATOR 5KV TRIAC 6DIP
Voltage - Isolation: 5000Vrms
Voltage - Forward (Vf) (Typ): 1.28V
Operating Temperature: -55°C ~ 100°C
Mounting Type: Through Hole
Output Type: Triac
Package / Case: 6-DIP (0.400", 10.16mm)
Packaging: Tube
Current - DC Forward (If) (Max): 30 mA
Voltage - Off State: 600 V
Number of Channels: 1
Part Status: Active
Current - LED Trigger (Ift) (Max): 2mA
Static dV/dt (Min): 10kV/µs
Zero Crossing Circuit: No
Supplier Device Package: 6-DIP
Turn On Time: 60µs
Current - Hold (Ih): 500µA
Approval Agency: cUL, FIMKO, UL, VDE
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| FODM121 |
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Hersteller: onsemi
Description: OPTOISO 3.75KV TRANSISTOR 4SMD
Current - DC Forward (If) (Max): 50 mA
Number of Channels: 1
Rise / Fall Time (Typ): 3µs, 3µs
Voltage - Output (Max): 80V
Voltage - Isolation: 3750Vrms
Current - Output / Channel: 80mA
Input Type: DC
Voltage - Forward (Vf) (Typ): 1.3V (Max)
Operating Temperature: -40°C ~ 110°C
Mounting Type: Surface Mount
Output Type: Transistor
Package / Case: 4-SMD, Gull Wing
Packaging: Tube
Supplier Device Package: 4-SMD
Current Transfer Ratio (Max): 600% @ 5mA
Vce Saturation (Max): 400mV
Current Transfer Ratio (Min): 50% @ 5mA
Description: OPTOISO 3.75KV TRANSISTOR 4SMD
Current - DC Forward (If) (Max): 50 mA
Number of Channels: 1
Rise / Fall Time (Typ): 3µs, 3µs
Voltage - Output (Max): 80V
Voltage - Isolation: 3750Vrms
Current - Output / Channel: 80mA
Input Type: DC
Voltage - Forward (Vf) (Typ): 1.3V (Max)
Operating Temperature: -40°C ~ 110°C
Mounting Type: Surface Mount
Output Type: Transistor
Package / Case: 4-SMD, Gull Wing
Packaging: Tube
Supplier Device Package: 4-SMD
Current Transfer Ratio (Max): 600% @ 5mA
Vce Saturation (Max): 400mV
Current Transfer Ratio (Min): 50% @ 5mA
auf Bestellung 125122 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 15+ | 1.49 EUR |
| 24+ | 0.9 EUR |
| 100+ | 0.6 EUR |
| 500+ | 0.48 EUR |
| 1000+ | 0.44 EUR |
| 2000+ | 0.4 EUR |
| 5000+ | 0.38 EUR |
| 10000+ | 0.36 EUR |
| 25000+ | 0.33 EUR |
| FODM124 |
![]() |
Hersteller: onsemi
Description: OPTOISO 3.75KV 1CH TRANS 4-SMD
Number of Channels: 1
Rise / Fall Time (Typ): 3µs, 3µs
Voltage - Output (Max): 80V
Supplier Device Package: 4-SMD
Current Transfer Ratio (Max): 1200% @ 1mA
Vce Saturation (Max): 400mV
Current Transfer Ratio (Min): 100% @ 1mA
Voltage - Isolation: 3750Vrms
Current - Output / Channel: 80mA
Input Type: DC
Current - DC Forward (If) (Max): 50 mA
Voltage - Forward (Vf) (Typ): 1.3V (Max)
Operating Temperature: -40°C ~ 110°C
Mounting Type: Surface Mount
Output Type: Transistor
Package / Case: 4-SMD, Gull Wing
Packaging: Tube
Description: OPTOISO 3.75KV 1CH TRANS 4-SMD
Number of Channels: 1
Rise / Fall Time (Typ): 3µs, 3µs
Voltage - Output (Max): 80V
Supplier Device Package: 4-SMD
Current Transfer Ratio (Max): 1200% @ 1mA
Vce Saturation (Max): 400mV
Current Transfer Ratio (Min): 100% @ 1mA
Voltage - Isolation: 3750Vrms
Current - Output / Channel: 80mA
Input Type: DC
Current - DC Forward (If) (Max): 50 mA
Voltage - Forward (Vf) (Typ): 1.3V (Max)
Operating Temperature: -40°C ~ 110°C
Mounting Type: Surface Mount
Output Type: Transistor
Package / Case: 4-SMD, Gull Wing
Packaging: Tube
auf Bestellung 12977 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 100+ | 0.62 EUR |
| 200+ | 0.57 EUR |
| FODM2705 |
![]() |
Hersteller: onsemi
Description: OPTOISO 3.75KV TRANSISTOR 4SMD
Current - DC Forward (If) (Max): 50 mA
Number of Channels: 1
Part Status: Active
Rise / Fall Time (Typ): 3µs, 3µs
Voltage - Output (Max): 40V
Supplier Device Package: 4-SMD
Current Transfer Ratio (Max): 300% @ 5mA
Vce Saturation (Max): 300mV
Current Transfer Ratio (Min): 50% @ 5mA
Voltage - Isolation: 3750Vrms
Current - Output / Channel: 80mA
Input Type: AC, DC
Voltage - Forward (Vf) (Typ): 1.4V (Max)
Operating Temperature: -40°C ~ 110°C
Mounting Type: Surface Mount
Output Type: Transistor
Package / Case: 4-SMD, Gull Wing
Packaging: Tube
Description: OPTOISO 3.75KV TRANSISTOR 4SMD
Current - DC Forward (If) (Max): 50 mA
Number of Channels: 1
Part Status: Active
Rise / Fall Time (Typ): 3µs, 3µs
Voltage - Output (Max): 40V
Supplier Device Package: 4-SMD
Current Transfer Ratio (Max): 300% @ 5mA
Vce Saturation (Max): 300mV
Current Transfer Ratio (Min): 50% @ 5mA
Voltage - Isolation: 3750Vrms
Current - Output / Channel: 80mA
Input Type: AC, DC
Voltage - Forward (Vf) (Typ): 1.4V (Max)
Operating Temperature: -40°C ~ 110°C
Mounting Type: Surface Mount
Output Type: Transistor
Package / Case: 4-SMD, Gull Wing
Packaging: Tube
auf Bestellung 8481 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 14+ | 1.59 EUR |
| 23+ | 0.95 EUR |
| 100+ | 0.63 EUR |
| 500+ | 0.5 EUR |
| 1000+ | 0.46 EUR |
| 2000+ | 0.43 EUR |
| 5000+ | 0.4 EUR |
| FODM3063R2 |
![]() |
Hersteller: onsemi
Description: OPTOISOLTR 3.75KV TRIAC 1CH 4SMD
Current - DC Forward (If) (Max): 60 mA
Voltage - Off State: 600 V
Current - On State (It (RMS)) (Max): 70 mA
Number of Channels: 1
Part Status: Active
Current - LED Trigger (Ift) (Max): 5mA
Static dV/dt (Min): 600V/µs
Zero Crossing Circuit: Yes
Supplier Device Package: 4-SMD
Current - Hold (Ih): 300µA (Typ)
Approval Agency: cUL, UL
Voltage - Isolation: 3750Vrms
Voltage - Forward (Vf) (Typ): 1.5V (Max)
Operating Temperature: -40°C ~ 100°C
Mounting Type: Surface Mount
Output Type: Triac
Package / Case: 4-SMD, Gull Wing
Packaging: Tape & Reel (TR)
Description: OPTOISOLTR 3.75KV TRIAC 1CH 4SMD
Current - DC Forward (If) (Max): 60 mA
Voltage - Off State: 600 V
Current - On State (It (RMS)) (Max): 70 mA
Number of Channels: 1
Part Status: Active
Current - LED Trigger (Ift) (Max): 5mA
Static dV/dt (Min): 600V/µs
Zero Crossing Circuit: Yes
Supplier Device Package: 4-SMD
Current - Hold (Ih): 300µA (Typ)
Approval Agency: cUL, UL
Voltage - Isolation: 3750Vrms
Voltage - Forward (Vf) (Typ): 1.5V (Max)
Operating Temperature: -40°C ~ 100°C
Mounting Type: Surface Mount
Output Type: Triac
Package / Case: 4-SMD, Gull Wing
Packaging: Tape & Reel (TR)
auf Bestellung 35000 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 2500+ | 1.64 EUR |
| 5000+ | 1.58 EUR |
| 7500+ | 1.55 EUR |
| FQB9N50CFTM_WS |
![]() |
Hersteller: onsemi
Description: MOSFET N-CH 500V 9A D2PAK
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 9A (Tc)
Rds On (Max) @ Id, Vgs: 850mOhm @ 4.5A, 10V
Power Dissipation (Max): 173W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-263 (D2Pak)
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 500 V
Gate Charge (Qg) (Max) @ Vgs: 35 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1030 pF @ 25 V
Description: MOSFET N-CH 500V 9A D2PAK
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 9A (Tc)
Rds On (Max) @ Id, Vgs: 850mOhm @ 4.5A, 10V
Power Dissipation (Max): 173W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-263 (D2Pak)
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 500 V
Gate Charge (Qg) (Max) @ Vgs: 35 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1030 pF @ 25 V
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| FQN1N50CTA |
![]() |
Hersteller: onsemi
Description: MOSFET N-CH 500V 380MA TO92-3
Input Capacitance (Ciss) (Max) @ Vds: 195 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 6.4 nC @ 10 V
Drain to Source Voltage (Vdss): 500 V
Vgs (Max): ±30V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Active
Supplier Device Package: TO-92-3
Vgs(th) (Max) @ Id: 4V @ 250µA
Power Dissipation (Max): 890mW (Ta), 2.08W (Tc)
Rds On (Max) @ Id, Vgs: 6Ohm @ 190mA, 10V
Current - Continuous Drain (Id) @ 25°C: 380mA (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-226-3, TO-92-3 (TO-226AA) Formed Leads
Packaging: Tape & Box (TB)
Description: MOSFET N-CH 500V 380MA TO92-3
Input Capacitance (Ciss) (Max) @ Vds: 195 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 6.4 nC @ 10 V
Drain to Source Voltage (Vdss): 500 V
Vgs (Max): ±30V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Active
Supplier Device Package: TO-92-3
Vgs(th) (Max) @ Id: 4V @ 250µA
Power Dissipation (Max): 890mW (Ta), 2.08W (Tc)
Rds On (Max) @ Id, Vgs: 6Ohm @ 190mA, 10V
Current - Continuous Drain (Id) @ 25°C: 380mA (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-226-3, TO-92-3 (TO-226AA) Formed Leads
Packaging: Tape & Box (TB)
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| FQT1N60CTF-WS |
![]() |
Hersteller: onsemi
Description: MOSFET N-CH 600V 200MA SOT223-4
Input Capacitance (Ciss) (Max) @ Vds: 170 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 6.2 nC @ 10 V
Drain to Source Voltage (Vdss): 600 V
Vgs (Max): ±30V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Active
Supplier Device Package: SOT-223-4
Vgs(th) (Max) @ Id: 4V @ 250µA
Power Dissipation (Max): 2.1W (Tc)
Rds On (Max) @ Id, Vgs: 11.5Ohm @ 100mA, 10V
Current - Continuous Drain (Id) @ 25°C: 200mA (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-261-4, TO-261AA
Packaging: Tape & Reel (TR)
Description: MOSFET N-CH 600V 200MA SOT223-4
Input Capacitance (Ciss) (Max) @ Vds: 170 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 6.2 nC @ 10 V
Drain to Source Voltage (Vdss): 600 V
Vgs (Max): ±30V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Active
Supplier Device Package: SOT-223-4
Vgs(th) (Max) @ Id: 4V @ 250µA
Power Dissipation (Max): 2.1W (Tc)
Rds On (Max) @ Id, Vgs: 11.5Ohm @ 100mA, 10V
Current - Continuous Drain (Id) @ 25°C: 200mA (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-261-4, TO-261AA
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| FSBB15CH60C |
![]() |
Hersteller: onsemi
Description: IGBT IPM 600V 15A 27-PWRDIP MOD
Packaging: Tube
Package / Case: 27-PowerDIP Module (1.205", 30.60mm)
Mounting Type: Through Hole
Type: IGBT
Configuration: 3 Phase
Voltage - Isolation: 2500Vrms
Current: 15 A
Voltage: 600 V
Description: IGBT IPM 600V 15A 27-PWRDIP MOD
Packaging: Tube
Package / Case: 27-PowerDIP Module (1.205", 30.60mm)
Mounting Type: Through Hole
Type: IGBT
Configuration: 3 Phase
Voltage - Isolation: 2500Vrms
Current: 15 A
Voltage: 600 V
Produkt ist nicht verfügbar
Mindestbestellmenge: 60 Stücke
Im Einkaufswagen
Stück im Wert von UAH
| FSDM1265RBWDTU |
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Hersteller: onsemi
Description: IC OFFLINE SW FLBACK TO220F-6L
Power (Watts): 110 W
Part Status: Obsolete
Voltage - Start Up: 12 V
Fault Protection: Current Limiting, Over Load, Over Temperature, Over Voltage
Supplier Device Package: TO-220F-6L (Forming)
Voltage - Supply (Vcc/Vdd): 8V ~ 20V
Topology: Flyback
Output Isolation: Isolated
Voltage - Breakdown: 650V
Internal Switch(s): Yes
Frequency - Switching: 66kHz
Duty Cycle: 82%
Operating Temperature: -25°C ~ 85°C (TA)
Mounting Type: Through Hole
Package / Case: TO-220-6 Full Pack, Formed Leads
Packaging: Tube
Description: IC OFFLINE SW FLBACK TO220F-6L
Power (Watts): 110 W
Part Status: Obsolete
Voltage - Start Up: 12 V
Fault Protection: Current Limiting, Over Load, Over Temperature, Over Voltage
Supplier Device Package: TO-220F-6L (Forming)
Voltage - Supply (Vcc/Vdd): 8V ~ 20V
Topology: Flyback
Output Isolation: Isolated
Voltage - Breakdown: 650V
Internal Switch(s): Yes
Frequency - Switching: 66kHz
Duty Cycle: 82%
Operating Temperature: -25°C ~ 85°C (TA)
Mounting Type: Through Hole
Package / Case: TO-220-6 Full Pack, Formed Leads
Packaging: Tube
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| ISL9V5045S3ST |
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Hersteller: onsemi
Description: IGBT 480V 51A TO263AB
Power - Max: 300 W
Voltage - Collector Emitter Breakdown (Max): 480 V
Current - Collector (Ic) (Max): 51 A
Part Status: Obsolete
Gate Charge: 32 nC
Test Condition: 300V, 1kOhm, 5V
Td (on/off) @ 25°C: -/10.8µs
Supplier Device Package: D²PAK (TO-263)
Vce(on) (Max) @ Vge, Ic: 1.6V @ 4V, 10A
Input Type: Logic
Operating Temperature: -40°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Packaging: Tape & Reel (TR)
Description: IGBT 480V 51A TO263AB
Power - Max: 300 W
Voltage - Collector Emitter Breakdown (Max): 480 V
Current - Collector (Ic) (Max): 51 A
Part Status: Obsolete
Gate Charge: 32 nC
Test Condition: 300V, 1kOhm, 5V
Td (on/off) @ 25°C: -/10.8µs
Supplier Device Package: D²PAK (TO-263)
Vce(on) (Max) @ Vge, Ic: 1.6V @ 4V, 10A
Input Type: Logic
Operating Temperature: -40°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| LM7809ACT |
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Hersteller: onsemi
Description: IC REG LINEAR 9V 1A TO220-3
Packaging: Tube
Package / Case: TO-220-3
Output Type: Fixed
Mounting Type: Through Hole
Current - Output: 1A
Operating Temperature: 0°C ~ 125°C
Output Configuration: Positive
Current - Quiescent (Iq): 8 mA
Voltage - Input (Max): 35V
Number of Regulators: 1
Supplier Device Package: TO-220-3
Voltage - Output (Min/Fixed): 9V
Part Status: Obsolete
PSRR: 71dB (120Hz)
Voltage Dropout (Max): 2V @ 1A (Typ)
Protection Features: Over Temperature, Short Circuit
Description: IC REG LINEAR 9V 1A TO220-3
Packaging: Tube
Package / Case: TO-220-3
Output Type: Fixed
Mounting Type: Through Hole
Current - Output: 1A
Operating Temperature: 0°C ~ 125°C
Output Configuration: Positive
Current - Quiescent (Iq): 8 mA
Voltage - Input (Max): 35V
Number of Regulators: 1
Supplier Device Package: TO-220-3
Voltage - Output (Min/Fixed): 9V
Part Status: Obsolete
PSRR: 71dB (120Hz)
Voltage Dropout (Max): 2V @ 1A (Typ)
Protection Features: Over Temperature, Short Circuit
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| LM7812ACT |
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Hersteller: onsemi
Description: IC REG LINEAR 12V 1A TO220-3
Packaging: Tube
Package / Case: TO-220-3
Output Type: Fixed
Mounting Type: Through Hole
Current - Output: 1A
Operating Temperature: 0°C ~ 125°C
Output Configuration: Positive
Current - Quiescent (Iq): 8 mA
Voltage - Input (Max): 35V
Number of Regulators: 1
Supplier Device Package: TO-220-3
Voltage - Output (Min/Fixed): 12V
Part Status: Obsolete
PSRR: 71dB (120Hz)
Voltage Dropout (Max): 2V @ 1A (Typ)
Protection Features: Over Temperature, Short Circuit
Description: IC REG LINEAR 12V 1A TO220-3
Packaging: Tube
Package / Case: TO-220-3
Output Type: Fixed
Mounting Type: Through Hole
Current - Output: 1A
Operating Temperature: 0°C ~ 125°C
Output Configuration: Positive
Current - Quiescent (Iq): 8 mA
Voltage - Input (Max): 35V
Number of Regulators: 1
Supplier Device Package: TO-220-3
Voltage - Output (Min/Fixed): 12V
Part Status: Obsolete
PSRR: 71dB (120Hz)
Voltage Dropout (Max): 2V @ 1A (Typ)
Protection Features: Over Temperature, Short Circuit
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| LM7815ACT |
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Hersteller: onsemi
Description: IC REG LINEAR 15V 1A TO220-3
Packaging: Tube
Package / Case: TO-220-3
Output Type: Fixed
Mounting Type: Through Hole
Current - Output: 1A
Operating Temperature: 0°C ~ 125°C
Output Configuration: Positive
Current - Quiescent (Iq): 8 mA
Voltage - Input (Max): 35V
Number of Regulators: 1
Supplier Device Package: TO-220-3
Voltage - Output (Min/Fixed): 15V
Part Status: Obsolete
PSRR: 70dB (120Hz)
Voltage Dropout (Max): 2V @ 1A (Typ)
Protection Features: Over Temperature, Short Circuit
Description: IC REG LINEAR 15V 1A TO220-3
Packaging: Tube
Package / Case: TO-220-3
Output Type: Fixed
Mounting Type: Through Hole
Current - Output: 1A
Operating Temperature: 0°C ~ 125°C
Output Configuration: Positive
Current - Quiescent (Iq): 8 mA
Voltage - Input (Max): 35V
Number of Regulators: 1
Supplier Device Package: TO-220-3
Voltage - Output (Min/Fixed): 15V
Part Status: Obsolete
PSRR: 70dB (120Hz)
Voltage Dropout (Max): 2V @ 1A (Typ)
Protection Features: Over Temperature, Short Circuit
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| LM7824CT |
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Hersteller: onsemi
Description: IC REG LINEAR 24V 1A TO220-3
Packaging: Tube
Package / Case: TO-220-3
Output Type: Fixed
Mounting Type: Through Hole
Current - Output: 1A
Operating Temperature: -40°C ~ 125°C
Output Configuration: Positive
Current - Quiescent (Iq): 8 mA
Voltage - Input (Max): 40V
Number of Regulators: 1
Supplier Device Package: TO-220-3
Voltage - Output (Min/Fixed): 24V
Part Status: Obsolete
PSRR: 67dB (120Hz)
Voltage Dropout (Max): 2V @ 1A (Typ)
Protection Features: Over Temperature, Short Circuit
Description: IC REG LINEAR 24V 1A TO220-3
Packaging: Tube
Package / Case: TO-220-3
Output Type: Fixed
Mounting Type: Through Hole
Current - Output: 1A
Operating Temperature: -40°C ~ 125°C
Output Configuration: Positive
Current - Quiescent (Iq): 8 mA
Voltage - Input (Max): 40V
Number of Regulators: 1
Supplier Device Package: TO-220-3
Voltage - Output (Min/Fixed): 24V
Part Status: Obsolete
PSRR: 67dB (120Hz)
Voltage Dropout (Max): 2V @ 1A (Typ)
Protection Features: Over Temperature, Short Circuit
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| MOC8050SR2VM |
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Hersteller: onsemi
Description: OPTOISOLTR 4.17KV 1CH DARL 6-SMD
Packaging: Tape & Reel (TR)
Package / Case: 6-SMD, Gull Wing
Output Type: Darlington
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 100°C
Voltage - Forward (Vf) (Typ): 1.18V
Input Type: DC
Current - Output / Channel: 150mA
Voltage - Isolation: 4170Vrms
Current Transfer Ratio (Min): 500% @ 10mA
Supplier Device Package: 6-SMD
Voltage - Output (Max): 80V
Turn On / Turn Off Time (Typ): 8.5µs, 95µs
Part Status: Active
Number of Channels: 1
Current - DC Forward (If) (Max): 60 mA
Description: OPTOISOLTR 4.17KV 1CH DARL 6-SMD
Packaging: Tape & Reel (TR)
Package / Case: 6-SMD, Gull Wing
Output Type: Darlington
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 100°C
Voltage - Forward (Vf) (Typ): 1.18V
Input Type: DC
Current - Output / Channel: 150mA
Voltage - Isolation: 4170Vrms
Current Transfer Ratio (Min): 500% @ 10mA
Supplier Device Package: 6-SMD
Voltage - Output (Max): 80V
Turn On / Turn Off Time (Typ): 8.5µs, 95µs
Part Status: Active
Number of Channels: 1
Current - DC Forward (If) (Max): 60 mA
auf Bestellung 22000 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 1000+ | 0.69 EUR |
| 2000+ | 0.65 EUR |
| 4N33SR2M |
![]() |
Hersteller: onsemi
Description: OPTOISO 4.17KV DARL W/BASE 6-SMD
Packaging: Cut Tape (CT)
Package / Case: 6-SMD, Gull Wing
Output Type: Darlington with Base
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 100°C
Voltage - Forward (Vf) (Typ): 1.2V
Input Type: DC
Current - Output / Channel: 150mA
Voltage - Isolation: 4170Vrms
Current Transfer Ratio (Min): 500% @ 10mA
Vce Saturation (Max): 1V
Supplier Device Package: 6-SMD
Voltage - Output (Max): 30V
Turn On / Turn Off Time (Typ): 5µs, 100µs (Max)
Part Status: Active
Number of Channels: 1
Current - DC Forward (If) (Max): 80 mA
Description: OPTOISO 4.17KV DARL W/BASE 6-SMD
Packaging: Cut Tape (CT)
Package / Case: 6-SMD, Gull Wing
Output Type: Darlington with Base
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 100°C
Voltage - Forward (Vf) (Typ): 1.2V
Input Type: DC
Current - Output / Channel: 150mA
Voltage - Isolation: 4170Vrms
Current Transfer Ratio (Min): 500% @ 10mA
Vce Saturation (Max): 1V
Supplier Device Package: 6-SMD
Voltage - Output (Max): 30V
Turn On / Turn Off Time (Typ): 5µs, 100µs (Max)
Part Status: Active
Number of Channels: 1
Current - DC Forward (If) (Max): 80 mA
auf Bestellung 3240 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 13+ | 1.7 EUR |
| 18+ | 1.18 EUR |
| 100+ | 0.87 EUR |
| 500+ | 0.73 EUR |
| FAN7362MX |
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Hersteller: onsemi
Description: IC GATE DRVR HIGH-SIDE 8SOP
DigiKey Programmable: Not Verified
Part Status: Last Time Buy
Current - Peak Output (Source, Sink): 250mA, 500mA
Logic Voltage - VIL, VIH: 0.8V, 2.9V
Gate Type: IGBT, N-Channel MOSFET
Number of Drivers: 1
Driven Configuration: High-Side
Channel Type: Single
Rise / Fall Time (Typ): 70ns, 30ns
Supplier Device Package: 8-SOIC
High Side Voltage - Max (Bootstrap): 600 V
Input Type: Non-Inverting
Voltage - Supply: 10V ~ 20V
Operating Temperature: -40°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Packaging: Cut Tape (CT)
Description: IC GATE DRVR HIGH-SIDE 8SOP
DigiKey Programmable: Not Verified
Part Status: Last Time Buy
Current - Peak Output (Source, Sink): 250mA, 500mA
Logic Voltage - VIL, VIH: 0.8V, 2.9V
Gate Type: IGBT, N-Channel MOSFET
Number of Drivers: 1
Driven Configuration: High-Side
Channel Type: Single
Rise / Fall Time (Typ): 70ns, 30ns
Supplier Device Package: 8-SOIC
High Side Voltage - Max (Bootstrap): 600 V
Input Type: Non-Inverting
Voltage - Supply: 10V ~ 20V
Operating Temperature: -40°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Packaging: Cut Tape (CT)
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| FAN73832MX |
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Hersteller: onsemi
Description: IC GATE DRVR HALF-BRIDGE 8SOIC
Packaging: Cut Tape (CT)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Voltage - Supply: 15V ~ 20V
Input Type: Non-Inverting
High Side Voltage - Max (Bootstrap): 600 V
Supplier Device Package: 8-SOIC
Rise / Fall Time (Typ): 50ns, 30ns
Channel Type: Synchronous
Driven Configuration: Half-Bridge
Number of Drivers: 2
Gate Type: IGBT, MOSFET (N-Channel)
Logic Voltage - VIL, VIH: 1.2V, 2.9V
Current - Peak Output (Source, Sink): 350mA, 650mA
Part Status: Last Time Buy
DigiKey Programmable: Not Verified
Description: IC GATE DRVR HALF-BRIDGE 8SOIC
Packaging: Cut Tape (CT)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Voltage - Supply: 15V ~ 20V
Input Type: Non-Inverting
High Side Voltage - Max (Bootstrap): 600 V
Supplier Device Package: 8-SOIC
Rise / Fall Time (Typ): 50ns, 30ns
Channel Type: Synchronous
Driven Configuration: Half-Bridge
Number of Drivers: 2
Gate Type: IGBT, MOSFET (N-Channel)
Logic Voltage - VIL, VIH: 1.2V, 2.9V
Current - Peak Output (Source, Sink): 350mA, 650mA
Part Status: Last Time Buy
DigiKey Programmable: Not Verified
auf Bestellung 388 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 9+ | 2.34 EUR |
| 13+ | 1.7 EUR |
| 25+ | 1.54 EUR |
| 100+ | 1.36 EUR |
| 250+ | 1.27 EUR |
| FAN7529MX |
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Hersteller: onsemi
Description: IC PFC CTRLR CRM/TRANSITION 8SOP
Current - Startup: 40 µA
Part Status: Not For New Designs
Supplier Device Package: 8-SOIC
Mode: Critical Conduction (CRM), Discontinuous (Transition)
Voltage - Supply: 12V ~ 22V
Operating Temperature: -40°C ~ 125°C
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Packaging: Cut Tape (CT)
Description: IC PFC CTRLR CRM/TRANSITION 8SOP
Current - Startup: 40 µA
Part Status: Not For New Designs
Supplier Device Package: 8-SOIC
Mode: Critical Conduction (CRM), Discontinuous (Transition)
Voltage - Supply: 12V ~ 22V
Operating Temperature: -40°C ~ 125°C
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Packaging: Cut Tape (CT)
auf Bestellung 2996 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 7+ | 3.39 EUR |
| 11+ | 2.08 EUR |
| 25+ | 1.75 EUR |
| 100+ | 1.37 EUR |
| 250+ | 1.18 EUR |
| 500+ | 1.06 EUR |
| 1000+ | 0.96 EUR |
| FDB33N25TM |
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Hersteller: onsemi
Description: MOSFET N-CH 250V 33A D2PAK
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 33A (Tc)
Rds On (Max) @ Id, Vgs: 94mOhm @ 16.5A, 10V
Power Dissipation (Max): 235W (Tc)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: TO-263 (D2Pak)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 250 V
Gate Charge (Qg) (Max) @ Vgs: 48 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2135 pF @ 25 V
Description: MOSFET N-CH 250V 33A D2PAK
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 33A (Tc)
Rds On (Max) @ Id, Vgs: 94mOhm @ 16.5A, 10V
Power Dissipation (Max): 235W (Tc)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: TO-263 (D2Pak)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 250 V
Gate Charge (Qg) (Max) @ Vgs: 48 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2135 pF @ 25 V
auf Bestellung 13928 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 4+ | 6.18 EUR |
| 10+ | 4.01 EUR |
| 100+ | 2.78 EUR |
| FDB5800 |
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Hersteller: onsemi
Description: MOSFET N-CH 60V 14A/80A D2PAK
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 14A (Ta), 80A (Tc)
Rds On (Max) @ Id, Vgs: 6mOhm @ 80A, 10V
Power Dissipation (Max): 242W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: TO-263 (D2Pak)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 135 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 6625 pF @ 15 V
Description: MOSFET N-CH 60V 14A/80A D2PAK
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 14A (Ta), 80A (Tc)
Rds On (Max) @ Id, Vgs: 6mOhm @ 80A, 10V
Power Dissipation (Max): 242W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: TO-263 (D2Pak)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 135 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 6625 pF @ 15 V
auf Bestellung 4355 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 3+ | 7.12 EUR |
| 10+ | 4.68 EUR |
| 100+ | 3.28 EUR |
| FDB8444 |
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Hersteller: onsemi
Description: MOSFET N-CH 40V 70A TO263AB
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Packaging: Cut Tape (CT)
Input Capacitance (Ciss) (Max) @ Vds: 8035 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 128 nC @ 10 V
Drain to Source Voltage (Vdss): 40 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Supplier Device Package: TO-263 (D2Pak)
Vgs(th) (Max) @ Id: 4V @ 250µA
Power Dissipation (Max): 167W (Tc)
Rds On (Max) @ Id, Vgs: 5.5mOhm @ 70A, 10V
Current - Continuous Drain (Id) @ 25°C: 70A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Description: MOSFET N-CH 40V 70A TO263AB
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Packaging: Cut Tape (CT)
Input Capacitance (Ciss) (Max) @ Vds: 8035 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 128 nC @ 10 V
Drain to Source Voltage (Vdss): 40 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Supplier Device Package: TO-263 (D2Pak)
Vgs(th) (Max) @ Id: 4V @ 250µA
Power Dissipation (Max): 167W (Tc)
Rds On (Max) @ Id, Vgs: 5.5mOhm @ 70A, 10V
Current - Continuous Drain (Id) @ 25°C: 70A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
auf Bestellung 271 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 5+ | 4.27 EUR |
| 10+ | 3.56 EUR |
| 100+ | 2.83 EUR |
| FDB8860 |
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Hersteller: onsemi
Description: MOSFET N-CH 30V 80A TO263AB
Description: MOSFET N-CH 30V 80A TO263AB
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| FDC658AP |
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Hersteller: onsemi
Description: MOSFET P-CH 30V 4A SUPERSOT6
Packaging: Cut Tape (CT)
Package / Case: SOT-23-6 Thin, TSOT-23-6
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 4A (Ta)
Rds On (Max) @ Id, Vgs: 50mOhm @ 4A, 10V
Power Dissipation (Max): 1.6W (Ta)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: SuperSOT™-6
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±25V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 8.1 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 470 pF @ 15 V
Description: MOSFET P-CH 30V 4A SUPERSOT6
Packaging: Cut Tape (CT)
Package / Case: SOT-23-6 Thin, TSOT-23-6
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 4A (Ta)
Rds On (Max) @ Id, Vgs: 50mOhm @ 4A, 10V
Power Dissipation (Max): 1.6W (Ta)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: SuperSOT™-6
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±25V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 8.1 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 470 pF @ 15 V
auf Bestellung 27086 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 13+ | 1.74 EUR |
| 20+ | 1.07 EUR |
| 50+ | 0.8 EUR |
| 100+ | 0.7 EUR |
| 500+ | 0.54 EUR |
| FDD6637 |
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Hersteller: onsemi
Description: MOSFET P-CH 35V 13A/55A DPAK
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 155°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 13A (Ta), 55A (Tc)
Rds On (Max) @ Id, Vgs: 11.6mOhm @ 14A, 10V
Power Dissipation (Max): 3.1W (Ta), 57W (Tc)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: TO-252AA
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±25V
Drain to Source Voltage (Vdss): 35 V
Gate Charge (Qg) (Max) @ Vgs: 63 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2370 pF @ 20 V
Description: MOSFET P-CH 35V 13A/55A DPAK
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 155°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 13A (Ta), 55A (Tc)
Rds On (Max) @ Id, Vgs: 11.6mOhm @ 14A, 10V
Power Dissipation (Max): 3.1W (Ta), 57W (Tc)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: TO-252AA
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±25V
Drain to Source Voltage (Vdss): 35 V
Gate Charge (Qg) (Max) @ Vgs: 63 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2370 pF @ 20 V
auf Bestellung 7448 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 5+ | 4.27 EUR |
| 10+ | 2.74 EUR |
| 100+ | 1.86 EUR |
| 500+ | 1.48 EUR |
| 1000+ | 1.36 EUR |
| FDD8444 |
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Hersteller: onsemi
Description: MOSFET N-CH 40V 145A TO252AA
Gate Charge (Qg) (Max) @ Vgs: 116 nC @ 10 V
Drain to Source Voltage (Vdss): 40 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Active
Supplier Device Package: TO-252AA
Vgs(th) (Max) @ Id: 4V @ 250µA
Power Dissipation (Max): 153W (Tc)
Rds On (Max) @ Id, Vgs: 5.2mOhm @ 50A, 10V
Current - Continuous Drain (Id) @ 25°C: 145A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Packaging: Cut Tape (CT)
Input Capacitance (Ciss) (Max) @ Vds: 6195 pF @ 25 V
Description: MOSFET N-CH 40V 145A TO252AA
Gate Charge (Qg) (Max) @ Vgs: 116 nC @ 10 V
Drain to Source Voltage (Vdss): 40 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Active
Supplier Device Package: TO-252AA
Vgs(th) (Max) @ Id: 4V @ 250µA
Power Dissipation (Max): 153W (Tc)
Rds On (Max) @ Id, Vgs: 5.2mOhm @ 50A, 10V
Current - Continuous Drain (Id) @ 25°C: 145A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Packaging: Cut Tape (CT)
Input Capacitance (Ciss) (Max) @ Vds: 6195 pF @ 25 V
auf Bestellung 5238 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 7+ | 3.45 EUR |
| 10+ | 2.32 EUR |
| 100+ | 1.57 EUR |
| 500+ | 1.25 EUR |
| 1000+ | 1.18 EUR |
| FDD8445 |
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Hersteller: onsemi
Description: MOSFET N-CH 40V 70A TO252AA
Input Capacitance (Ciss) (Max) @ Vds: 4050 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 59 nC @ 10 V
Drain to Source Voltage (Vdss): 40 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Supplier Device Package: TO-252AA
Vgs(th) (Max) @ Id: 4V @ 250µA
Power Dissipation (Max): 79W (Tc)
Rds On (Max) @ Id, Vgs: 8.7mOhm @ 50A, 10V
Current - Continuous Drain (Id) @ 25°C: 70A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Packaging: Cut Tape (CT)
Description: MOSFET N-CH 40V 70A TO252AA
Input Capacitance (Ciss) (Max) @ Vds: 4050 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 59 nC @ 10 V
Drain to Source Voltage (Vdss): 40 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Supplier Device Package: TO-252AA
Vgs(th) (Max) @ Id: 4V @ 250µA
Power Dissipation (Max): 79W (Tc)
Rds On (Max) @ Id, Vgs: 8.7mOhm @ 50A, 10V
Current - Continuous Drain (Id) @ 25°C: 70A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Packaging: Cut Tape (CT)
auf Bestellung 2305 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 13+ | 1.7 EUR |
| 18+ | 1.23 EUR |
| 100+ | 1.02 EUR |
| 500+ | 0.8 EUR |
| 1000+ | 0.73 EUR |
| FDMA420NZ |
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Hersteller: onsemi
Description: MOSFET N-CH 20V 5.7A 6MICROFET
Input Capacitance (Ciss) (Max) @ Vds: 935 pF @ 10 V
Gate Charge (Qg) (Max) @ Vgs: 12 nC @ 4.5 V
Drain to Source Voltage (Vdss): 20 V
Vgs (Max): ±12V
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
Supplier Device Package: 6-MicroFET (2x2)
Vgs(th) (Max) @ Id: 1.5V @ 250µA
Power Dissipation (Max): 2.4W (Ta)
Rds On (Max) @ Id, Vgs: 30mOhm @ 5.7A, 4.5V
Current - Continuous Drain (Id) @ 25°C: 5.7A (Ta)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 6-WDFN Exposed Pad
Packaging: Cut Tape (CT)
Description: MOSFET N-CH 20V 5.7A 6MICROFET
Input Capacitance (Ciss) (Max) @ Vds: 935 pF @ 10 V
Gate Charge (Qg) (Max) @ Vgs: 12 nC @ 4.5 V
Drain to Source Voltage (Vdss): 20 V
Vgs (Max): ±12V
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
Supplier Device Package: 6-MicroFET (2x2)
Vgs(th) (Max) @ Id: 1.5V @ 250µA
Power Dissipation (Max): 2.4W (Ta)
Rds On (Max) @ Id, Vgs: 30mOhm @ 5.7A, 4.5V
Current - Continuous Drain (Id) @ 25°C: 5.7A (Ta)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 6-WDFN Exposed Pad
Packaging: Cut Tape (CT)
auf Bestellung 6250 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 15+ | 1.44 EUR |
| 22+ | 0.99 EUR |
| 100+ | 0.68 EUR |
| 500+ | 0.56 EUR |
| 1000+ | 0.5 EUR |
| FDMA430NZ |
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Hersteller: onsemi
Description: MOSFET N-CH 30V 5A 6MICROFET
Input Capacitance (Ciss) (Max) @ Vds: 800 pF @ 10 V
Gate Charge (Qg) (Max) @ Vgs: 11 nC @ 4.5 V
Drain to Source Voltage (Vdss): 30 V
Vgs (Max): ±12V
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
Supplier Device Package: 6-MicroFET (2x2)
Vgs(th) (Max) @ Id: 1.5V @ 250µA
Power Dissipation (Max): 2.4W (Ta)
Rds On (Max) @ Id, Vgs: 40mOhm @ 5A, 4.5V
Current - Continuous Drain (Id) @ 25°C: 5A (Ta)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 6-WDFN Exposed Pad
Packaging: Cut Tape (CT)
Description: MOSFET N-CH 30V 5A 6MICROFET
Input Capacitance (Ciss) (Max) @ Vds: 800 pF @ 10 V
Gate Charge (Qg) (Max) @ Vgs: 11 nC @ 4.5 V
Drain to Source Voltage (Vdss): 30 V
Vgs (Max): ±12V
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
Supplier Device Package: 6-MicroFET (2x2)
Vgs(th) (Max) @ Id: 1.5V @ 250µA
Power Dissipation (Max): 2.4W (Ta)
Rds On (Max) @ Id, Vgs: 40mOhm @ 5A, 4.5V
Current - Continuous Drain (Id) @ 25°C: 5A (Ta)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 6-WDFN Exposed Pad
Packaging: Cut Tape (CT)
auf Bestellung 33000 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 12+ | 1.82 EUR |
| 19+ | 1.14 EUR |
| 100+ | 0.74 EUR |
| 500+ | 0.57 EUR |
| 1000+ | 0.51 EUR |
| FDMB3800N |
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Hersteller: onsemi
Description: MOSFET 2N-CH 30V 8MLP MICROFET
Packaging: Cut Tape (CT)
Package / Case: 8-PowerWDFN
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 750mW
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 4.8A
Input Capacitance (Ciss) (Max) @ Vds: 465pF @ 15V
Rds On (Max) @ Id, Vgs: 40mOhm @ 4.8A, 10V
Gate Charge (Qg) (Max) @ Vgs: 5.6nC @ 5V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: 8-MLP, MicroFET (3x1.9)
Part Status: Active
Description: MOSFET 2N-CH 30V 8MLP MICROFET
Packaging: Cut Tape (CT)
Package / Case: 8-PowerWDFN
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 750mW
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 4.8A
Input Capacitance (Ciss) (Max) @ Vds: 465pF @ 15V
Rds On (Max) @ Id, Vgs: 40mOhm @ 4.8A, 10V
Gate Charge (Qg) (Max) @ Vgs: 5.6nC @ 5V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: 8-MLP, MicroFET (3x1.9)
Part Status: Active
auf Bestellung 10662 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 8+ | 2.7 EUR |
| 13+ | 1.7 EUR |
| 100+ | 1.14 EUR |
| 500+ | 0.89 EUR |
| 1000+ | 0.81 EUR |
| FDS4897C |
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Hersteller: onsemi
Description: MOSFET N/P-CH 40V 6.2A 8SOIC
Supplier Device Package: 8-SOIC
Vgs(th) (Max) @ Id: 3V @ 250µA
FET Feature: Logic Level Gate
Gate Charge (Qg) (Max) @ Vgs: 20nC @ 10V
Rds On (Max) @ Id, Vgs: 29mOhm @ 6.2A, 10V
Input Capacitance (Ciss) (Max) @ Vds: 760pF @ 20V
Current - Continuous Drain (Id) @ 25°C: 6.2A, 4.4A
Drain to Source Voltage (Vdss): 40V
Power - Max: 900mW
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Configuration: N and P-Channel
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Packaging: Cut Tape (CT)
Description: MOSFET N/P-CH 40V 6.2A 8SOIC
Supplier Device Package: 8-SOIC
Vgs(th) (Max) @ Id: 3V @ 250µA
FET Feature: Logic Level Gate
Gate Charge (Qg) (Max) @ Vgs: 20nC @ 10V
Rds On (Max) @ Id, Vgs: 29mOhm @ 6.2A, 10V
Input Capacitance (Ciss) (Max) @ Vds: 760pF @ 20V
Current - Continuous Drain (Id) @ 25°C: 6.2A, 4.4A
Drain to Source Voltage (Vdss): 40V
Power - Max: 900mW
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Configuration: N and P-Channel
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Packaging: Cut Tape (CT)
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| FDS5692Z |
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Hersteller: onsemi
Description: MOSFET N-CH 50V 5.8A 8SOIC
Input Capacitance (Ciss) (Max) @ Vds: 1025 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 25 nC @ 10 V
Drain to Source Voltage (Vdss): 50 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Part Status: Obsolete
Supplier Device Package: 8-SOIC
Vgs(th) (Max) @ Id: 3V @ 250µA
Power Dissipation (Max): 2.5W (Ta)
Rds On (Max) @ Id, Vgs: 24mOhm @ 5.8A, 10V
Current - Continuous Drain (Id) @ 25°C: 5.8A (Ta)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Packaging: Cut Tape (CT)
Description: MOSFET N-CH 50V 5.8A 8SOIC
Input Capacitance (Ciss) (Max) @ Vds: 1025 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 25 nC @ 10 V
Drain to Source Voltage (Vdss): 50 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Part Status: Obsolete
Supplier Device Package: 8-SOIC
Vgs(th) (Max) @ Id: 3V @ 250µA
Power Dissipation (Max): 2.5W (Ta)
Rds On (Max) @ Id, Vgs: 24mOhm @ 5.8A, 10V
Current - Continuous Drain (Id) @ 25°C: 5.8A (Ta)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Packaging: Cut Tape (CT)
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| FDS6673BZ |
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Hersteller: onsemi
Description: MOSFET P-CH 30V 14.5A 8SOIC
Packaging: Cut Tape (CT)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 14.5A (Ta)
Rds On (Max) @ Id, Vgs: 7.8mOhm @ 14.5A, 10V
Power Dissipation (Max): 2.5W (Ta)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: 8-SOIC
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±25V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 124 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4700 pF @ 15 V
Description: MOSFET P-CH 30V 14.5A 8SOIC
Packaging: Cut Tape (CT)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 14.5A (Ta)
Rds On (Max) @ Id, Vgs: 7.8mOhm @ 14.5A, 10V
Power Dissipation (Max): 2.5W (Ta)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: 8-SOIC
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±25V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 124 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4700 pF @ 15 V
auf Bestellung 4933 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 7+ | 3.22 EUR |
| 11+ | 2.05 EUR |
| 100+ | 1.37 EUR |
| 500+ | 1.07 EUR |
| 1000+ | 0.98 EUR |
| FDS6675BZ |
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Hersteller: onsemi
Description: MOSFET P-CH 30V 11A 8SOIC
Packaging: Cut Tape (CT)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 11A (Ta)
Rds On (Max) @ Id, Vgs: 13mOhm @ 11A, 10V
Power Dissipation (Max): 2.5W (Ta)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: 8-SOIC
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±25V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 62 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2470 pF @ 15 V
Description: MOSFET P-CH 30V 11A 8SOIC
Packaging: Cut Tape (CT)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 11A (Ta)
Rds On (Max) @ Id, Vgs: 13mOhm @ 11A, 10V
Power Dissipation (Max): 2.5W (Ta)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: 8-SOIC
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±25V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 62 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2470 pF @ 15 V
auf Bestellung 8374 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 9+ | 2.59 EUR |
| 13+ | 1.64 EUR |
| 100+ | 1.08 EUR |
| 500+ | 0.84 EUR |
| 1000+ | 0.77 EUR |
| FDS8690 |
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Hersteller: onsemi
Description: MOSFET N-CH 30V 14A 8SOIC
Input Capacitance (Ciss) (Max) @ Vds: 1680 pF @ 15 V
Gate Charge (Qg) (Max) @ Vgs: 27 nC @ 10 V
Drain to Source Voltage (Vdss): 30 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Part Status: Obsolete
Supplier Device Package: 8-SOIC
Vgs(th) (Max) @ Id: 3V @ 250µA
Power Dissipation (Max): 2.5W (Ta)
Rds On (Max) @ Id, Vgs: 7.6mOhm @ 14A, 10V
Current - Continuous Drain (Id) @ 25°C: 14A (Ta)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Packaging: Cut Tape (CT)
Description: MOSFET N-CH 30V 14A 8SOIC
Input Capacitance (Ciss) (Max) @ Vds: 1680 pF @ 15 V
Gate Charge (Qg) (Max) @ Vgs: 27 nC @ 10 V
Drain to Source Voltage (Vdss): 30 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Part Status: Obsolete
Supplier Device Package: 8-SOIC
Vgs(th) (Max) @ Id: 3V @ 250µA
Power Dissipation (Max): 2.5W (Ta)
Rds On (Max) @ Id, Vgs: 7.6mOhm @ 14A, 10V
Current - Continuous Drain (Id) @ 25°C: 14A (Ta)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Packaging: Cut Tape (CT)
auf Bestellung 334 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 7+ | 3.09 EUR |
| 10+ | 2.78 EUR |
| 100+ | 2.17 EUR |
| FDY100PZ |
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Hersteller: onsemi
Description: MOSFET P-CH 20V 350MA SC89-3
Input Capacitance (Ciss) (Max) @ Vds: 100 pF @ 10 V
Gate Charge (Qg) (Max) @ Vgs: 1.4 nC @ 4.5 V
Drain to Source Voltage (Vdss): 20 V
Vgs (Max): ±8V
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
Part Status: Last Time Buy
Supplier Device Package: SC-89-3
Vgs(th) (Max) @ Id: 1.5V @ 250µA
Power Dissipation (Max): 625mW (Ta)
Rds On (Max) @ Id, Vgs: 1.2Ohm @ 350mA, 4.5V
Current - Continuous Drain (Id) @ 25°C: 350mA (Ta)
FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: SC-89, SOT-490
Packaging: Cut Tape (CT)
Description: MOSFET P-CH 20V 350MA SC89-3
Input Capacitance (Ciss) (Max) @ Vds: 100 pF @ 10 V
Gate Charge (Qg) (Max) @ Vgs: 1.4 nC @ 4.5 V
Drain to Source Voltage (Vdss): 20 V
Vgs (Max): ±8V
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
Part Status: Last Time Buy
Supplier Device Package: SC-89-3
Vgs(th) (Max) @ Id: 1.5V @ 250µA
Power Dissipation (Max): 625mW (Ta)
Rds On (Max) @ Id, Vgs: 1.2Ohm @ 350mA, 4.5V
Current - Continuous Drain (Id) @ 25°C: 350mA (Ta)
FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: SC-89, SOT-490
Packaging: Cut Tape (CT)
auf Bestellung 13462 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 27+ | 0.8 EUR |
| 31+ | 0.68 EUR |
| 100+ | 0.48 EUR |
| 500+ | 0.37 EUR |
| 1000+ | 0.3 EUR |
| FDY101PZ |
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Hersteller: onsemi
Description: MOSFET P-CH 20V 150MA SC89-3
Input Capacitance (Ciss) (Max) @ Vds: 100 pF @ 10 V
Gate Charge (Qg) (Max) @ Vgs: 1.4 nC @ 4.5 V
Drain to Source Voltage (Vdss): 20 V
Vgs (Max): ±8V
Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4.5V
Part Status: Active
Supplier Device Package: SC-89-3
Vgs(th) (Max) @ Id: 1.5V @ 250µA
Power Dissipation (Max): 625mW (Ta)
Rds On (Max) @ Id, Vgs: 8Ohm @ 150mA, 4.5V
Current - Continuous Drain (Id) @ 25°C: 150mA (Ta)
FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: SC-89, SOT-490
Packaging: Cut Tape (CT)
Description: MOSFET P-CH 20V 150MA SC89-3
Input Capacitance (Ciss) (Max) @ Vds: 100 pF @ 10 V
Gate Charge (Qg) (Max) @ Vgs: 1.4 nC @ 4.5 V
Drain to Source Voltage (Vdss): 20 V
Vgs (Max): ±8V
Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4.5V
Part Status: Active
Supplier Device Package: SC-89-3
Vgs(th) (Max) @ Id: 1.5V @ 250µA
Power Dissipation (Max): 625mW (Ta)
Rds On (Max) @ Id, Vgs: 8Ohm @ 150mA, 4.5V
Current - Continuous Drain (Id) @ 25°C: 150mA (Ta)
FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: SC-89, SOT-490
Packaging: Cut Tape (CT)
auf Bestellung 877 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 22+ | 0.99 EUR |
| 27+ | 0.81 EUR |
| 100+ | 0.55 EUR |
| 500+ | 0.42 EUR |
| FDY3000NZ |
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Hersteller: onsemi
Description: MOSFET 2N-CH 20V 600MA SOT563F
Supplier Device Package: SOT-563F
Vgs(th) (Max) @ Id: 1.3V @ 250µA
FET Feature: Logic Level Gate
Gate Charge (Qg) (Max) @ Vgs: 1.1nC @ 4.5V
Rds On (Max) @ Id, Vgs: 700mOhm @ 600mA, 4.5V
Input Capacitance (Ciss) (Max) @ Vds: 60pF @ 10V
Current - Continuous Drain (Id) @ 25°C: 600mA
Drain to Source Voltage (Vdss): 20V
Power - Max: 446mW
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Configuration: 2 N-Channel (Dual)
Mounting Type: Surface Mount
Package / Case: SOT-563, SOT-666
Packaging: Cut Tape (CT)
Description: MOSFET 2N-CH 20V 600MA SOT563F
Supplier Device Package: SOT-563F
Vgs(th) (Max) @ Id: 1.3V @ 250µA
FET Feature: Logic Level Gate
Gate Charge (Qg) (Max) @ Vgs: 1.1nC @ 4.5V
Rds On (Max) @ Id, Vgs: 700mOhm @ 600mA, 4.5V
Input Capacitance (Ciss) (Max) @ Vds: 60pF @ 10V
Current - Continuous Drain (Id) @ 25°C: 600mA
Drain to Source Voltage (Vdss): 20V
Power - Max: 446mW
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Configuration: 2 N-Channel (Dual)
Mounting Type: Surface Mount
Package / Case: SOT-563, SOT-666
Packaging: Cut Tape (CT)
auf Bestellung 1499 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 28+ | 0.75 EUR |
| 32+ | 0.65 EUR |
| 100+ | 0.45 EUR |
| 500+ | 0.36 EUR |
| 1000+ | 0.29 EUR |
| FDY300NZ |
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Hersteller: onsemi
Description: MOSFET N-CH 20V 600MA SC89-3
Description: MOSFET N-CH 20V 600MA SC89-3
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| FDY301NZ |
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Hersteller: onsemi
Description: MOSFET N-CH 20V 200MA SC89-3
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: SC-89, SOT-490
Packaging: Cut Tape (CT)
Input Capacitance (Ciss) (Max) @ Vds: 60 pF @ 10 V
Gate Charge (Qg) (Max) @ Vgs: 1.1 nC @ 4.5 V
Drain to Source Voltage (Vdss): 20 V
Vgs (Max): ±12V
Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4.5V
Part Status: Last Time Buy
Supplier Device Package: SC-89-3
Vgs(th) (Max) @ Id: 1.5V @ 250µA
Power Dissipation (Max): 625mW (Ta)
Rds On (Max) @ Id, Vgs: 5Ohm @ 200mA, 4.5V
Current - Continuous Drain (Id) @ 25°C: 200mA (Ta)
Description: MOSFET N-CH 20V 200MA SC89-3
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: SC-89, SOT-490
Packaging: Cut Tape (CT)
Input Capacitance (Ciss) (Max) @ Vds: 60 pF @ 10 V
Gate Charge (Qg) (Max) @ Vgs: 1.1 nC @ 4.5 V
Drain to Source Voltage (Vdss): 20 V
Vgs (Max): ±12V
Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4.5V
Part Status: Last Time Buy
Supplier Device Package: SC-89-3
Vgs(th) (Max) @ Id: 1.5V @ 250µA
Power Dissipation (Max): 625mW (Ta)
Rds On (Max) @ Id, Vgs: 5Ohm @ 200mA, 4.5V
Current - Continuous Drain (Id) @ 25°C: 200mA (Ta)
auf Bestellung 4759 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 22+ | 0.99 EUR |
| 29+ | 0.74 EUR |
| 100+ | 0.46 EUR |
| 500+ | 0.31 EUR |
| 1000+ | 0.24 EUR |
| FOD3180SDV |
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Hersteller: onsemi
Description: OPTOISO 5KV 1CH GATE DVR 8SMD
Packaging: Cut Tape (CT)
Package / Case: 8-SMD, Gull Wing
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 100°C
Voltage - Forward (Vf) (Typ): 1.43V
Current - Peak Output: 2.5A
Technology: Optical Coupling
Current - Output High, Low: 2A, 2A
Voltage - Isolation: 5000Vrms
Approval Agency: cUL, UL, VDE
Supplier Device Package: 8-SMD
Rise / Fall Time (Typ): 75ns, 55ns
Common Mode Transient Immunity (Min): 15kV/µs
Propagation Delay tpLH / tpHL (Max): 200ns, 200ns
Pulse Width Distortion (Max): 65ns
Part Status: Active
Number of Channels: 1
Current - DC Forward (If) (Max): 25 mA
Voltage - Output Supply: 10V ~ 20V
Description: OPTOISO 5KV 1CH GATE DVR 8SMD
Packaging: Cut Tape (CT)
Package / Case: 8-SMD, Gull Wing
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 100°C
Voltage - Forward (Vf) (Typ): 1.43V
Current - Peak Output: 2.5A
Technology: Optical Coupling
Current - Output High, Low: 2A, 2A
Voltage - Isolation: 5000Vrms
Approval Agency: cUL, UL, VDE
Supplier Device Package: 8-SMD
Rise / Fall Time (Typ): 75ns, 55ns
Common Mode Transient Immunity (Min): 15kV/µs
Propagation Delay tpLH / tpHL (Max): 200ns, 200ns
Pulse Width Distortion (Max): 65ns
Part Status: Active
Number of Channels: 1
Current - DC Forward (If) (Max): 25 mA
Voltage - Output Supply: 10V ~ 20V
auf Bestellung 546 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 4+ | 5.97 EUR |
| 10+ | 4.36 EUR |
| 100+ | 3.4 EUR |
| 500+ | 2.98 EUR |
| FOD420SD |
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Hersteller: onsemi
Description: OPTOISOLATOR 5KV TRIAC 6DIP SMD
Current - DC Forward (If) (Max): 30 mA
Voltage - Off State: 600 V
Number of Channels: 1
Part Status: Active
Current - LED Trigger (Ift) (Max): 2mA
Static dV/dt (Min): 10kV/µs
Zero Crossing Circuit: No
Supplier Device Package: 6-SMD
Turn On Time: 60µs
Current - Hold (Ih): 500µA
Approval Agency: cUL, FIMKO, UL
Voltage - Isolation: 5000Vrms
Voltage - Forward (Vf) (Typ): 1.28V
Operating Temperature: -55°C ~ 100°C
Mounting Type: Surface Mount
Output Type: Triac
Package / Case: 6-SMD, Gull Wing
Packaging: Cut Tape (CT)
Description: OPTOISOLATOR 5KV TRIAC 6DIP SMD
Current - DC Forward (If) (Max): 30 mA
Voltage - Off State: 600 V
Number of Channels: 1
Part Status: Active
Current - LED Trigger (Ift) (Max): 2mA
Static dV/dt (Min): 10kV/µs
Zero Crossing Circuit: No
Supplier Device Package: 6-SMD
Turn On Time: 60µs
Current - Hold (Ih): 500µA
Approval Agency: cUL, FIMKO, UL
Voltage - Isolation: 5000Vrms
Voltage - Forward (Vf) (Typ): 1.28V
Operating Temperature: -55°C ~ 100°C
Mounting Type: Surface Mount
Output Type: Triac
Package / Case: 6-SMD, Gull Wing
Packaging: Cut Tape (CT)
auf Bestellung 5145 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 3+ | 9.04 EUR |
| 10+ | 6.7 EUR |
| 100+ | 5.31 EUR |
| 500+ | 4.71 EUR |
| FODM3063R2 |
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Hersteller: onsemi
Description: OPTOISOLTR 3.75KV TRIAC 1CH 4SMD
Current - DC Forward (If) (Max): 60 mA
Voltage - Off State: 600 V
Current - On State (It (RMS)) (Max): 70 mA
Number of Channels: 1
Part Status: Active
Current - LED Trigger (Ift) (Max): 5mA
Static dV/dt (Min): 600V/µs
Zero Crossing Circuit: Yes
Supplier Device Package: 4-SMD
Current - Hold (Ih): 300µA (Typ)
Approval Agency: cUL, UL
Voltage - Isolation: 3750Vrms
Voltage - Forward (Vf) (Typ): 1.5V (Max)
Operating Temperature: -40°C ~ 100°C
Mounting Type: Surface Mount
Output Type: Triac
Package / Case: 4-SMD, Gull Wing
Packaging: Cut Tape (CT)
Description: OPTOISOLTR 3.75KV TRIAC 1CH 4SMD
Current - DC Forward (If) (Max): 60 mA
Voltage - Off State: 600 V
Current - On State (It (RMS)) (Max): 70 mA
Number of Channels: 1
Part Status: Active
Current - LED Trigger (Ift) (Max): 5mA
Static dV/dt (Min): 600V/µs
Zero Crossing Circuit: Yes
Supplier Device Package: 4-SMD
Current - Hold (Ih): 300µA (Typ)
Approval Agency: cUL, UL
Voltage - Isolation: 3750Vrms
Voltage - Forward (Vf) (Typ): 1.5V (Max)
Operating Temperature: -40°C ~ 100°C
Mounting Type: Surface Mount
Output Type: Triac
Package / Case: 4-SMD, Gull Wing
Packaging: Cut Tape (CT)
auf Bestellung 35789 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 6+ | 3.89 EUR |
| 10+ | 2.8 EUR |
| 100+ | 2.13 EUR |
| 500+ | 1.84 EUR |
| 1000+ | 1.75 EUR |
| FPF2125 |
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Hersteller: onsemi
Description: IC PWR SWITCH P-CHAN 1:1 SOT23-5
Fault Protection: Current Limiting (Adjustable), Over Temperature, Reverse Current, UVLO
Supplier Device Package: SOT-23-5
Ratio - Input:Output: 1:1
Current - Output (Max): 1.5A
Packaging: Cut Tape (CT)
Mounting Type: Surface Mount
Output Type: P-Channel
Package / Case: SC-74A, SOT-753
Part Status: Obsolete
Voltage - Supply (Vcc/Vdd): Not Required
Voltage - Load: 1.8V ~ 5.5V
Input Type: Non-Inverting
Rds On (Typ): 125mOhm
Output Configuration: High Side
Operating Temperature: -40°C ~ 85°C (TA)
Switch Type: General Purpose
Interface: On/Off
Number of Outputs: 1
Description: IC PWR SWITCH P-CHAN 1:1 SOT23-5
Fault Protection: Current Limiting (Adjustable), Over Temperature, Reverse Current, UVLO
Supplier Device Package: SOT-23-5
Ratio - Input:Output: 1:1
Current - Output (Max): 1.5A
Packaging: Cut Tape (CT)
Mounting Type: Surface Mount
Output Type: P-Channel
Package / Case: SC-74A, SOT-753
Part Status: Obsolete
Voltage - Supply (Vcc/Vdd): Not Required
Voltage - Load: 1.8V ~ 5.5V
Input Type: Non-Inverting
Rds On (Typ): 125mOhm
Output Configuration: High Side
Operating Temperature: -40°C ~ 85°C (TA)
Switch Type: General Purpose
Interface: On/Off
Number of Outputs: 1
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| FQN1N50CTA |
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Hersteller: onsemi
Description: MOSFET N-CH 500V 380MA TO92-3
Input Capacitance (Ciss) (Max) @ Vds: 195 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 6.4 nC @ 10 V
Drain to Source Voltage (Vdss): 500 V
Vgs (Max): ±30V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Active
Supplier Device Package: TO-92-3
Vgs(th) (Max) @ Id: 4V @ 250µA
Power Dissipation (Max): 890mW (Ta), 2.08W (Tc)
Rds On (Max) @ Id, Vgs: 6Ohm @ 190mA, 10V
Current - Continuous Drain (Id) @ 25°C: 380mA (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-226-3, TO-92-3 (TO-226AA) Formed Leads
Packaging: Cut Tape (CT)
Description: MOSFET N-CH 500V 380MA TO92-3
Input Capacitance (Ciss) (Max) @ Vds: 195 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 6.4 nC @ 10 V
Drain to Source Voltage (Vdss): 500 V
Vgs (Max): ±30V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Active
Supplier Device Package: TO-92-3
Vgs(th) (Max) @ Id: 4V @ 250µA
Power Dissipation (Max): 890mW (Ta), 2.08W (Tc)
Rds On (Max) @ Id, Vgs: 6Ohm @ 190mA, 10V
Current - Continuous Drain (Id) @ 25°C: 380mA (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-226-3, TO-92-3 (TO-226AA) Formed Leads
Packaging: Cut Tape (CT)
auf Bestellung 139 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 12+ | 1.87 EUR |
| 19+ | 1.15 EUR |
| 100+ | 0.76 EUR |
| FQT1N60CTF-WS |
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Hersteller: onsemi
Description: MOSFET N-CH 600V 200MA SOT223-4
Input Capacitance (Ciss) (Max) @ Vds: 170 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 6.2 nC @ 10 V
Drain to Source Voltage (Vdss): 600 V
Vgs (Max): ±30V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Active
Supplier Device Package: SOT-223-4
Vgs(th) (Max) @ Id: 4V @ 250µA
Power Dissipation (Max): 2.1W (Tc)
Rds On (Max) @ Id, Vgs: 11.5Ohm @ 100mA, 10V
Current - Continuous Drain (Id) @ 25°C: 200mA (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-261-4, TO-261AA
Packaging: Cut Tape (CT)
Description: MOSFET N-CH 600V 200MA SOT223-4
Input Capacitance (Ciss) (Max) @ Vds: 170 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 6.2 nC @ 10 V
Drain to Source Voltage (Vdss): 600 V
Vgs (Max): ±30V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Active
Supplier Device Package: SOT-223-4
Vgs(th) (Max) @ Id: 4V @ 250µA
Power Dissipation (Max): 2.1W (Tc)
Rds On (Max) @ Id, Vgs: 11.5Ohm @ 100mA, 10V
Current - Continuous Drain (Id) @ 25°C: 200mA (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-261-4, TO-261AA
Packaging: Cut Tape (CT)
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| ISL9V5045S3ST |
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Hersteller: onsemi
Description: IGBT 480V 51A TO263AB
Power - Max: 300 W
Voltage - Collector Emitter Breakdown (Max): 480 V
Current - Collector (Ic) (Max): 51 A
Part Status: Obsolete
Gate Charge: 32 nC
Test Condition: 300V, 1kOhm, 5V
Td (on/off) @ 25°C: -/10.8µs
Supplier Device Package: D²PAK (TO-263)
Vce(on) (Max) @ Vge, Ic: 1.6V @ 4V, 10A
Input Type: Logic
Operating Temperature: -40°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Packaging: Cut Tape (CT)
Description: IGBT 480V 51A TO263AB
Power - Max: 300 W
Voltage - Collector Emitter Breakdown (Max): 480 V
Current - Collector (Ic) (Max): 51 A
Part Status: Obsolete
Gate Charge: 32 nC
Test Condition: 300V, 1kOhm, 5V
Td (on/off) @ 25°C: -/10.8µs
Supplier Device Package: D²PAK (TO-263)
Vce(on) (Max) @ Vge, Ic: 1.6V @ 4V, 10A
Input Type: Logic
Operating Temperature: -40°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Packaging: Cut Tape (CT)
Produkt ist nicht verfügbar
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| MOC8050SR2VM |
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Hersteller: onsemi
Description: OPTOISOLTR 4.17KV 1CH DARL 6-SMD
Packaging: Cut Tape (CT)
Package / Case: 6-SMD, Gull Wing
Output Type: Darlington
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 100°C
Voltage - Forward (Vf) (Typ): 1.18V
Input Type: DC
Current - Output / Channel: 150mA
Voltage - Isolation: 4170Vrms
Current Transfer Ratio (Min): 500% @ 10mA
Supplier Device Package: 6-SMD
Voltage - Output (Max): 80V
Turn On / Turn Off Time (Typ): 8.5µs, 95µs
Part Status: Active
Number of Channels: 1
Current - DC Forward (If) (Max): 60 mA
Description: OPTOISOLTR 4.17KV 1CH DARL 6-SMD
Packaging: Cut Tape (CT)
Package / Case: 6-SMD, Gull Wing
Output Type: Darlington
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 100°C
Voltage - Forward (Vf) (Typ): 1.18V
Input Type: DC
Current - Output / Channel: 150mA
Voltage - Isolation: 4170Vrms
Current Transfer Ratio (Min): 500% @ 10mA
Supplier Device Package: 6-SMD
Voltage - Output (Max): 80V
Turn On / Turn Off Time (Typ): 8.5µs, 95µs
Part Status: Active
Number of Channels: 1
Current - DC Forward (If) (Max): 60 mA
auf Bestellung 22265 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 12+ | 1.78 EUR |
| 17+ | 1.24 EUR |
| 100+ | 0.92 EUR |
| 500+ | 0.76 EUR |
| CAT4101TV-T75 |
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Hersteller: onsemi
Description: IC LED DRVR LIN PWM 1A D2PAK-5
Packaging: Tape & Reel (TR)
Package / Case: TO-263-6, D2PAK (5 Leads + Tab), TO-263BA
Voltage - Output: 25V
Mounting Type: Surface Mount
Number of Outputs: 1
Type: Linear
Operating Temperature: -40°C ~ 85°C (TA)
Applications: Lighting
Current - Output / Channel: 1A
Internal Switch(s): Yes
Supplier Device Package: TO-263 (D2Pak)
Dimming: PWM
Voltage - Supply (Min): 3V
Voltage - Supply (Max): 5.5V
Description: IC LED DRVR LIN PWM 1A D2PAK-5
Packaging: Tape & Reel (TR)
Package / Case: TO-263-6, D2PAK (5 Leads + Tab), TO-263BA
Voltage - Output: 25V
Mounting Type: Surface Mount
Number of Outputs: 1
Type: Linear
Operating Temperature: -40°C ~ 85°C (TA)
Applications: Lighting
Current - Output / Channel: 1A
Internal Switch(s): Yes
Supplier Device Package: TO-263 (D2Pak)
Dimming: PWM
Voltage - Supply (Min): 3V
Voltage - Supply (Max): 5.5V
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| CAT4101TV-T75 |
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Hersteller: onsemi
Description: IC LED DRVR LIN PWM 1A D2PAK-5
Packaging: Cut Tape (CT)
Package / Case: TO-263-6, D²Pak (5 Leads + Tab), TO-263BA
Voltage - Output: 25V
Mounting Type: Surface Mount
Number of Outputs: 1
Type: Linear
Operating Temperature: -40°C ~ 85°C (TA)
Applications: Lighting
Current - Output / Channel: 1A
Internal Switch(s): Yes
Supplier Device Package: D²PAK-5 (TO-263-5)
Dimming: PWM
Voltage - Supply (Min): 3V
Voltage - Supply (Max): 5.5V
Description: IC LED DRVR LIN PWM 1A D2PAK-5
Packaging: Cut Tape (CT)
Package / Case: TO-263-6, D²Pak (5 Leads + Tab), TO-263BA
Voltage - Output: 25V
Mounting Type: Surface Mount
Number of Outputs: 1
Type: Linear
Operating Temperature: -40°C ~ 85°C (TA)
Applications: Lighting
Current - Output / Channel: 1A
Internal Switch(s): Yes
Supplier Device Package: D²PAK-5 (TO-263-5)
Dimming: PWM
Voltage - Supply (Min): 3V
Voltage - Supply (Max): 5.5V
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| FDB047N10 |
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Hersteller: onsemi
Description: MOSFET N-CH 100V 120A D2PAK
Input Capacitance (Ciss) (Max) @ Vds: 15265 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 210 nC @ 10 V
Drain to Source Voltage (Vdss): 100 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Active
Supplier Device Package: TO-263 (D2Pak)
Vgs(th) (Max) @ Id: 4.5V @ 250µA
Power Dissipation (Max): 375W (Tc)
Rds On (Max) @ Id, Vgs: 4.7mOhm @ 75A, 10V
Current - Continuous Drain (Id) @ 25°C: 120A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Packaging: Tape & Reel (TR)
Description: MOSFET N-CH 100V 120A D2PAK
Input Capacitance (Ciss) (Max) @ Vds: 15265 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 210 nC @ 10 V
Drain to Source Voltage (Vdss): 100 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Active
Supplier Device Package: TO-263 (D2Pak)
Vgs(th) (Max) @ Id: 4.5V @ 250µA
Power Dissipation (Max): 375W (Tc)
Rds On (Max) @ Id, Vgs: 4.7mOhm @ 75A, 10V
Current - Continuous Drain (Id) @ 25°C: 120A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Packaging: Tape & Reel (TR)
auf Bestellung 1600 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 800+ | 3.49 EUR |
| FDMS8880 |
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Hersteller: onsemi
Description: MOSFET N-CH 30V 13.5A/21A 8PQFN
Input Capacitance (Ciss) (Max) @ Vds: 1585 pF @ 15 V
Gate Charge (Qg) (Max) @ Vgs: 33 nC @ 10 V
Drain to Source Voltage (Vdss): 30 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Supplier Device Package: 8-PQFN (5x6)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Power Dissipation (Max): 2.5W (Ta), 42W (Tc)
Rds On (Max) @ Id, Vgs: 8.5mOhm @ 13.5A, 10V
Current - Continuous Drain (Id) @ 25°C: 13.5A (Ta), 21A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-PowerTDFN
Packaging: Tape & Reel (TR)
Description: MOSFET N-CH 30V 13.5A/21A 8PQFN
Input Capacitance (Ciss) (Max) @ Vds: 1585 pF @ 15 V
Gate Charge (Qg) (Max) @ Vgs: 33 nC @ 10 V
Drain to Source Voltage (Vdss): 30 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Supplier Device Package: 8-PQFN (5x6)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Power Dissipation (Max): 2.5W (Ta), 42W (Tc)
Rds On (Max) @ Id, Vgs: 8.5mOhm @ 13.5A, 10V
Current - Continuous Drain (Id) @ 25°C: 13.5A (Ta), 21A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-PowerTDFN
Packaging: Tape & Reel (TR)
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| FFPF08S60SNTU |
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Hersteller: onsemi
Description: DIODE GEN PURP 600V 8A TO220F-2L
Current - Reverse Leakage @ Vr: 100 µA @ 600 V
Voltage - Forward (Vf) (Max) @ If: 3.4 V @ 8 A
Voltage - DC Reverse (Vr) (Max): 600 V
Part Status: Obsolete
Operating Temperature - Junction: -65°C ~ 150°C
Supplier Device Package: TO-220F-2L
Current - Average Rectified (Io): 8A
Technology: Avalanche
Reverse Recovery Time (trr): 25 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Through Hole
Package / Case: TO-220-2 Full Pack
Packaging: Tube
Description: DIODE GEN PURP 600V 8A TO220F-2L
Current - Reverse Leakage @ Vr: 100 µA @ 600 V
Voltage - Forward (Vf) (Max) @ If: 3.4 V @ 8 A
Voltage - DC Reverse (Vr) (Max): 600 V
Part Status: Obsolete
Operating Temperature - Junction: -65°C ~ 150°C
Supplier Device Package: TO-220F-2L
Current - Average Rectified (Io): 8A
Technology: Avalanche
Reverse Recovery Time (trr): 25 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Through Hole
Package / Case: TO-220-2 Full Pack
Packaging: Tube
Produkt ist nicht verfügbar
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| FOD410 |
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Hersteller: onsemi
Description: OPTOISOLATOR 5KV TRIAC 6DIP
Current - DC Forward (If) (Max): 30 mA
Voltage - Off State: 600 V
Number of Channels: 1
Part Status: Active
Current - LED Trigger (Ift) (Max): 2mA
Static dV/dt (Min): 10kV/µs
Zero Crossing Circuit: Yes
Supplier Device Package: 6-DIP
Turn On Time: 60µs
Current - Hold (Ih): 500µA
Approval Agency: CSA, UL
Voltage - Isolation: 5000Vrms
Voltage - Forward (Vf) (Typ): 1.25V
Operating Temperature: -55°C ~ 100°C
Mounting Type: Through Hole
Output Type: Triac
Package / Case: 6-DIP (0.300", 7.62mm)
Packaging: Tube
Description: OPTOISOLATOR 5KV TRIAC 6DIP
Current - DC Forward (If) (Max): 30 mA
Voltage - Off State: 600 V
Number of Channels: 1
Part Status: Active
Current - LED Trigger (Ift) (Max): 2mA
Static dV/dt (Min): 10kV/µs
Zero Crossing Circuit: Yes
Supplier Device Package: 6-DIP
Turn On Time: 60µs
Current - Hold (Ih): 500µA
Approval Agency: CSA, UL
Voltage - Isolation: 5000Vrms
Voltage - Forward (Vf) (Typ): 1.25V
Operating Temperature: -55°C ~ 100°C
Mounting Type: Through Hole
Output Type: Triac
Package / Case: 6-DIP (0.300", 7.62mm)
Packaging: Tube
auf Bestellung 1825 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 4+ | 5.93 EUR |
| 50+ | 4.19 EUR |
| 100+ | 3.51 EUR |
| FOD4108 |
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Hersteller: onsemi
Description: OPTOISOLATOR 5KV TRIAC 6DIP
Current - DC Forward (If) (Max): 30 mA
Voltage - Off State: 800 V
Number of Channels: 1
Part Status: Active
Current - LED Trigger (Ift) (Max): 2mA
Static dV/dt (Min): 10kV/µs
Zero Crossing Circuit: Yes
Supplier Device Package: 6-DIP
Turn On Time: 60µs
Current - Hold (Ih): 500µA
Approval Agency: CSA, UL
Voltage - Isolation: 5000Vrms
Voltage - Forward (Vf) (Typ): 1.25V
Operating Temperature: -55°C ~ 100°C
Mounting Type: Through Hole
Output Type: Triac
Package / Case: 6-DIP (0.300", 7.62mm)
Packaging: Tube
Description: OPTOISOLATOR 5KV TRIAC 6DIP
Current - DC Forward (If) (Max): 30 mA
Voltage - Off State: 800 V
Number of Channels: 1
Part Status: Active
Current - LED Trigger (Ift) (Max): 2mA
Static dV/dt (Min): 10kV/µs
Zero Crossing Circuit: Yes
Supplier Device Package: 6-DIP
Turn On Time: 60µs
Current - Hold (Ih): 500µA
Approval Agency: CSA, UL
Voltage - Isolation: 5000Vrms
Voltage - Forward (Vf) (Typ): 1.25V
Operating Temperature: -55°C ~ 100°C
Mounting Type: Through Hole
Output Type: Triac
Package / Case: 6-DIP (0.300", 7.62mm)
Packaging: Tube
auf Bestellung 19142 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 3+ | 7.66 EUR |
| 50+ | 5.43 EUR |
| 100+ | 4.45 EUR |
| 500+ | 3.75 EUR |
| 1000+ | 3.44 EUR |
| 2000+ | 3.3 EUR |
| 5000+ | 3.24 EUR |
| FPF1003A |
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Hersteller: onsemi
Description: IC PWR SWITCH P-CHAN 1:1 6WLCSP
Supplier Device Package: 6-WLCSP (0.96x1.66)
Ratio - Input:Output: 1:1
Current - Output (Max): 2A
Voltage - Supply (Vcc/Vdd): Not Required
Voltage - Load: 1.2V ~ 5.5V
Input Type: Non-Inverting
Rds On (Typ): 20mOhm
Output Configuration: High Side
Operating Temperature: -40°C ~ 85°C (TA)
Switch Type: General Purpose
Interface: On/Off
Number of Outputs: 1
Mounting Type: Surface Mount
Output Type: P-Channel
Package / Case: 6-UFBGA, WLCSP
Features: Slew Rate Controlled
Packaging: Tape & Reel (TR)
Description: IC PWR SWITCH P-CHAN 1:1 6WLCSP
Supplier Device Package: 6-WLCSP (0.96x1.66)
Ratio - Input:Output: 1:1
Current - Output (Max): 2A
Voltage - Supply (Vcc/Vdd): Not Required
Voltage - Load: 1.2V ~ 5.5V
Input Type: Non-Inverting
Rds On (Typ): 20mOhm
Output Configuration: High Side
Operating Temperature: -40°C ~ 85°C (TA)
Switch Type: General Purpose
Interface: On/Off
Number of Outputs: 1
Mounting Type: Surface Mount
Output Type: P-Channel
Package / Case: 6-UFBGA, WLCSP
Features: Slew Rate Controlled
Packaging: Tape & Reel (TR)
auf Bestellung 3000 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 3000+ | 0.81 EUR |
| FSA642UMX |
Hersteller: onsemi
Description: IC SWITCH 3PDT 24UMLP
Packaging: Tape & Reel (TR)
Package / Case: 24-UFQFN
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 85°C (TA)
Applications: MIPI
On-State Resistance (Max): 14Ohm
-3db Bandwidth: 1GHz
Supplier Device Package: 24-UMLP (3.4x2.5)
Voltage - Supply, Single (V+): 2.65V ~ 4.3V
Switch Circuit: 3PDT
Part Status: Obsolete
Number of Channels: 1
Description: IC SWITCH 3PDT 24UMLP
Packaging: Tape & Reel (TR)
Package / Case: 24-UFQFN
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 85°C (TA)
Applications: MIPI
On-State Resistance (Max): 14Ohm
-3db Bandwidth: 1GHz
Supplier Device Package: 24-UMLP (3.4x2.5)
Voltage - Supply, Single (V+): 2.65V ~ 4.3V
Switch Circuit: 3PDT
Part Status: Obsolete
Number of Channels: 1
Produkt ist nicht verfügbar
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| FDB047N10 |
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Hersteller: onsemi
Description: MOSFET N-CH 100V 120A D2PAK
Input Capacitance (Ciss) (Max) @ Vds: 15265 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 210 nC @ 10 V
Drain to Source Voltage (Vdss): 100 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Active
Supplier Device Package: TO-263 (D2Pak)
Vgs(th) (Max) @ Id: 4.5V @ 250µA
Power Dissipation (Max): 375W (Tc)
Rds On (Max) @ Id, Vgs: 4.7mOhm @ 75A, 10V
Current - Continuous Drain (Id) @ 25°C: 120A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Packaging: Cut Tape (CT)
Description: MOSFET N-CH 100V 120A D2PAK
Input Capacitance (Ciss) (Max) @ Vds: 15265 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 210 nC @ 10 V
Drain to Source Voltage (Vdss): 100 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Active
Supplier Device Package: TO-263 (D2Pak)
Vgs(th) (Max) @ Id: 4.5V @ 250µA
Power Dissipation (Max): 375W (Tc)
Rds On (Max) @ Id, Vgs: 4.7mOhm @ 75A, 10V
Current - Continuous Drain (Id) @ 25°C: 120A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Packaging: Cut Tape (CT)
auf Bestellung 1990 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 4+ | 6.5 EUR |
| 10+ | 5.19 EUR |
| 100+ | 4.28 EUR |
| FPF1003A |
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Hersteller: onsemi
Description: IC PWR SWITCH P-CHAN 1:1 6WLCSP
Supplier Device Package: 6-WLCSP (0.96x1.66)
Ratio - Input:Output: 1:1
Current - Output (Max): 2A
Voltage - Supply (Vcc/Vdd): Not Required
Voltage - Load: 1.2V ~ 5.5V
Input Type: Non-Inverting
Rds On (Typ): 20mOhm
Output Configuration: High Side
Operating Temperature: -40°C ~ 85°C (TA)
Switch Type: General Purpose
Interface: On/Off
Number of Outputs: 1
Mounting Type: Surface Mount
Output Type: P-Channel
Package / Case: 6-UFBGA, WLCSP
Features: Slew Rate Controlled
Packaging: Cut Tape (CT)
Description: IC PWR SWITCH P-CHAN 1:1 6WLCSP
Supplier Device Package: 6-WLCSP (0.96x1.66)
Ratio - Input:Output: 1:1
Current - Output (Max): 2A
Voltage - Supply (Vcc/Vdd): Not Required
Voltage - Load: 1.2V ~ 5.5V
Input Type: Non-Inverting
Rds On (Typ): 20mOhm
Output Configuration: High Side
Operating Temperature: -40°C ~ 85°C (TA)
Switch Type: General Purpose
Interface: On/Off
Number of Outputs: 1
Mounting Type: Surface Mount
Output Type: P-Channel
Package / Case: 6-UFBGA, WLCSP
Features: Slew Rate Controlled
Packaging: Cut Tape (CT)
auf Bestellung 4802 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 11+ | 1.99 EUR |
| 12+ | 1.78 EUR |
| 25+ | 1.69 EUR |
| 100+ | 1.3 EUR |
| 250+ | 1.15 EUR |
| 500+ | 1.08 EUR |
| 1000+ | 0.84 EUR |
































