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FDA24N50 FDA24N50 onsemi fda24n50-d.pdf Description: MOSFET N-CH 500V 24A TO3PN
Packaging: Tube
Package / Case: TO-3P-3, SC-65-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 24A (Tc)
Rds On (Max) @ Id, Vgs: 190mOhm @ 12A, 10V
Power Dissipation (Max): 270W (Tc)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: TO-3PN
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 500 V
Gate Charge (Qg) (Max) @ Vgs: 85 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4150 pF @ 25 V
Produkt ist nicht verfügbar
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FDA28N50 FDA28N50 onsemi FDA28N50-D.pdf Description: MOSFET N-CH 500V 28A TO3PN
Packaging: Tube
Package / Case: TO-3P-3, SC-65-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 28A (Tc)
Rds On (Max) @ Id, Vgs: 155mOhm @ 14A, 10V
Power Dissipation (Max): 310W (Tc)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: TO-3PN
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 500 V
Gate Charge (Qg) (Max) @ Vgs: 105 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 5140 pF @ 25 V
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FGH60N60SFDTU FGH60N60SFDTU onsemi fgh60n60sfd-d.pdf Description: IGBT FIELD STOP 600V 120A TO-247
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 47 ns
Vce(on) (Max) @ Vge, Ic: 2.9V @ 15V, 60A
Supplier Device Package: TO-247-3
IGBT Type: Field Stop
Td (on/off) @ 25°C: 22ns/134ns
Switching Energy: 1.79mJ (on), 670µJ (off)
Test Condition: 400V, 60A, 5Ohm, 15V
Gate Charge: 198 nC
Part Status: Obsolete
Current - Collector (Ic) (Max): 120 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 180 A
Power - Max: 378 W
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FGH60N60UFDTU FGH60N60UFDTU onsemi fgh60n60ufd-d.pdf Description: IGBT FIELD STOP 600V 120A TO-247
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 47 ns
Vce(on) (Max) @ Vge, Ic: 2.4V @ 15V, 60A
Supplier Device Package: TO-247-3
IGBT Type: Field Stop
Td (on/off) @ 25°C: 23ns/130ns
Switching Energy: 1.81mJ (on), 810µJ (off)
Test Condition: 400V, 60A, 5Ohm, 15V
Gate Charge: 188 nC
Part Status: Obsolete
Current - Collector (Ic) (Max): 120 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 180 A
Power - Max: 298 W
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FSUSB104UMX FSUSB104UMX onsemi fsusb104-d.pdf Description: IC USB SWITCH DUAL DPDT 10UMLP
Number of Channels: 1
Switch Circuit: DPDT
Voltage - Supply, Single (V+): 3V ~ 4.4V
Supplier Device Package: 10-UMLP (1.8x1.4)
-3db Bandwidth: 720MHz
On-State Resistance (Max): 6.5Ohm
Applications: USB
Operating Temperature: -40°C ~ 85°C (TA)
Mounting Type: Surface Mount
Package / Case: 10-UFQFN
Features: Bi-Directional, USB 2.0
Packaging: Tape & Reel (TR)
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SG6521SZ SG6521SZ onsemi SG6521.pdf Description: IC SUPERVISOR 4 CHANNEL 16SOP
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FSUSB104UMX FSUSB104UMX onsemi fsusb104-d.pdf Description: IC USB SWITCH DUAL DPDT 10UMLP
Number of Channels: 1
Switch Circuit: DPDT
Voltage - Supply, Single (V+): 3V ~ 4.4V
Supplier Device Package: 10-UMLP (1.8x1.4)
-3db Bandwidth: 720MHz
On-State Resistance (Max): 6.5Ohm
Applications: USB
Operating Temperature: -40°C ~ 85°C (TA)
Mounting Type: Surface Mount
Package / Case: 10-UFQFN
Features: Bi-Directional, USB 2.0
Packaging: Cut Tape (CT)
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SG6521SZ SG6521SZ onsemi SG6521.pdf Description: IC SUPERVISOR 4 CHANNEL 16SOP
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1N4002_NL 1N4002_NL onsemi 1N4001.pdf Description: DIODE STANDARD 100V 1A DO41
Packaging: Tape & Reel (TR)
Package / Case: DO-204AL, DO-41, Axial
Mounting Type: Through Hole
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard
Capacitance @ Vr, F: 15pF @ 4V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: DO-41
Operating Temperature - Junction: -55°C ~ 175°C
Part Status: Obsolete
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 1 A
Current - Reverse Leakage @ Vr: 10 µA @ 100 V
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1N4004_NL 1N4004_NL onsemi 1N4001.pdf Description: DIODE STANDARD 400V 1A DO41
Packaging: Tape & Reel (TR)
Package / Case: DO-204AL, DO-41, Axial
Mounting Type: Through Hole
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard
Capacitance @ Vr, F: 15pF @ 4V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: DO-41
Operating Temperature - Junction: -55°C ~ 175°C
Part Status: Obsolete
Voltage - DC Reverse (Vr) (Max): 400 V
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 1 A
Current - Reverse Leakage @ Vr: 10 µA @ 400 V
Current Coupled to Voltage - Forward (Vf) (Max) @ If: 1
Voltage Coupled to Current - Reverse Leakage @ Vr: 400
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1N4448WT 1N4448WT onsemi 1N914BWT-D.pdf Description: DIODE STANDARD 75V 200MA SOD523F
Packaging: Tape & Reel (TR)
Package / Case: SC-79, SOD-523F
Mounting Type: Surface Mount
Speed: Small Signal =< 200mA (Io), Any Speed
Reverse Recovery Time (trr): 4 ns
Technology: Standard
Capacitance @ Vr, F: 4pF @ 0V, 1MHz
Current - Average Rectified (Io): 200mA
Supplier Device Package: SOD-523F
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 75 V
Voltage - Forward (Vf) (Max) @ If: 1 V @ 100 mA
Current - Reverse Leakage @ Vr: 5 µA @ 75 V
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1N5231C 1N5231C onsemi 1n5221b-d.pdf Description: DIODE ZENER 5.1V 500MW DO35
Packaging: Bulk
Current - Reverse Leakage @ Vr: 5 µA @ 2 V
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 200 mA
Power - Max: 500 mW
Part Status: Active
Supplier Device Package: DO-35
Impedance (Max) (Zzt): 17 Ohms
Voltage - Zener (Nom) (Vz): 5.1 V
Operating Temperature: -65°C ~ 200°C
Mounting Type: Through Hole
Package / Case: DO-204AH, DO-35, Axial
Tolerance: ±2%
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1N5231CTR 1N5231CTR onsemi 1N5221B-D.PDF Description: DIODE ZENER 5.1V 500MW DO35
Current - Reverse Leakage @ Vr: 5 µA @ 2 V
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 200 mA
Power - Max: 500 mW
Impedance (Max) (Zzt): 17 Ohms
Voltage - Zener (Nom) (Vz): 5.1 V
Operating Temperature: -65°C ~ 200°C
Mounting Type: Through Hole
Package / Case: DO-204AH, DO-35, Axial
Tolerance: ±2%
Packaging: Tape & Reel (TR)
Part Status: Active
Supplier Device Package: DO-35
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1N914BWT 1N914BWT onsemi 1N914BWT-D.pdf Description: DIODE STANDARD 75V 200MA SOD523F
Packaging: Tape & Reel (TR)
Package / Case: SC-79, SOD-523F
Mounting Type: Surface Mount
Speed: Small Signal =< 200mA (Io), Any Speed
Reverse Recovery Time (trr): 4 ns
Technology: Standard
Capacitance @ Vr, F: 4pF @ 0V, 1MHz
Current - Average Rectified (Io): 200mA
Supplier Device Package: SOD-523F
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 75 V
Voltage - Forward (Vf) (Max) @ If: 1 V @ 100 mA
Current - Reverse Leakage @ Vr: 5 µA @ 75 V
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2N5245_J35Z 2N5245_J35Z onsemi 2N5245.pdf Description: RF MOSFET JFET 30V TO92-3
Voltage - Rated: 30 V
Part Status: Obsolete
Supplier Device Package: TO-92-3
Technology: JFET
Configuration: N-Channel
Mounting Type: Through Hole
Current Rating (Amps): 15mA
Package / Case: TO-226-3, TO-92-3 (TO-226AA) Formed Leads
Packaging: Bulk
Produkt ist nicht verfügbar
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2N5246_J35Z 2N5246_J35Z onsemi 2N5246.pdf Description: RF MOSFET JFET 30V TO92-3
Voltage - Rated: 30 V
Supplier Device Package: TO-92-3
Technology: JFET
Configuration: N-Channel
Mounting Type: Through Hole
Current Rating (Amps): 7mA
Package / Case: TO-226-3, TO-92-3 (TO-226AA) Formed Leads
Packaging: Bulk
Produkt ist nicht verfügbar
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2N5247_J35Z 2N5247_J35Z onsemi Description: RF MOSFET JFET 30V TO92-3
Voltage - Rated: 30 V
Supplier Device Package: TO-92-3
Noise Figure: 4dB
Technology: JFET
Configuration: N-Channel
Frequency: 400MHz
Mounting Type: Through Hole
Package / Case: TO-226-3, TO-92-3 (TO-226AA) Formed Leads
Packaging: Bulk
Produkt ist nicht verfügbar
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2N5950_J35Z 2N5950_J35Z onsemi 2N5950.pdf Description: RF MOSFET JFET 30V TO92-3
Voltage - Rated: 30 V
Part Status: Obsolete
Supplier Device Package: TO-92-3
Configuration: N-Channel
Mounting Type: Through Hole
Current Rating (Amps): 15mA
Package / Case: TO-226-3, TO-92-3 (TO-226AA) Formed Leads
Packaging: Bulk
Technology: JFET
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2N5951_J35Z 2N5951_J35Z onsemi 2N5951.pdf Description: RF MOSFET JFET 15V TO92-3
Voltage - Test: 15 V
Voltage - Rated: 30 V
Part Status: Obsolete
Supplier Device Package: TO-92-3
Noise Figure: 2dB
Technology: JFET
Configuration: N-Channel
Frequency: 1kHz
Mounting Type: Through Hole
Current Rating (Amps): 13mA
Package / Case: TO-226-3, TO-92-3 (TO-226AA) Formed Leads
Packaging: Bulk
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2N5952_J35Z 2N5952_J35Z onsemi 2N5952.pdf Description: RF MOSFET JFET 15V TO92-3
Voltage - Test: 15 V
Voltage - Rated: 30 V
Part Status: Obsolete
Supplier Device Package: TO-92-3
Configuration: N-Channel
Frequency: 1kHz
Mounting Type: Through Hole
Current Rating (Amps): 8mA
Package / Case: TO-226-3, TO-92-3 (TO-226AA) Formed Leads
Packaging: Bulk
Noise Figure: 2dB
Technology: JFET
Produkt ist nicht verfügbar
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2N5953_J35Z 2N5953_J35Z onsemi 2N5953.pdf Description: RF MOSFET JFET 15V TO92-3
Configuration: N-Channel
Frequency: 1kHz
Mounting Type: Through Hole
Current Rating (Amps): 5mA
Package / Case: TO-226-3, TO-92-3 (TO-226AA) Formed Leads
Packaging: Bulk
Voltage - Test: 15 V
Voltage - Rated: 30 V
Part Status: Obsolete
Supplier Device Package: TO-92-3
Noise Figure: 2dB
Technology: JFET
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2N7002_NB9G002 2N7002_NB9G002 onsemi 2N7000,02(A).pdf Description: MOSFET N-CH 60V 115MA SOT-23
Input Capacitance (Ciss) (Max) @ Vds: 50 pF @ 25 V
Drain to Source Voltage (Vdss): 60 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 5V, 10V
Part Status: Obsolete
Supplier Device Package: SOT-23-3
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Power Dissipation (Max): 200mW (Ta)
Rds On (Max) @ Id, Vgs: 7.5Ohm @ 500mA, 10V
Current - Continuous Drain (Id) @ 25°C: 115mA (Ta)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-236-3, SC-59, SOT-23-3
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar
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4N26M_F132 4N26M_F132 onsemi 4N25-28_35-37%2C%20H11A1-A5.pdf Description: OPTOISO 4.17KV TRANS W/BASE 6DIP
Packaging: Bulk
Package / Case: 6-DIP (0.300", 7.62mm)
Output Type: Transistor with Base
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 100°C
Voltage - Forward (Vf) (Typ): 1.18V
Input Type: DC
Voltage - Isolation: 4170Vrms
Current Transfer Ratio (Min): 20% @ 10mA
Vce Saturation (Max): 500mV
Supplier Device Package: 6-DIP
Voltage - Output (Max): 30V
Turn On / Turn Off Time (Typ): 2µs, 2µs
Part Status: Obsolete
Number of Channels: 1
Current - DC Forward (If) (Max): 60 mA
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4N32SVM 4N32SVM onsemi til113m-d.pdf Description: OPTOISO 4.17KV DARL W/BASE 6SMD
Vce Saturation (Max): 1V
Current Transfer Ratio (Min): 500% @ 10mA
Voltage - Isolation: 4170Vrms
Current - Output / Channel: 150mA
Input Type: DC
Voltage - Forward (Vf) (Typ): 1.2V
Operating Temperature: -40°C ~ 100°C
Mounting Type: Surface Mount
Output Type: Darlington with Base
Package / Case: 6-SMD, Gull Wing
Packaging: Bulk
Current - DC Forward (If) (Max): 80 mA
Number of Channels: 1
Part Status: Obsolete
Turn On / Turn Off Time (Typ): 5µs, 100µs (Max)
Voltage - Output (Max): 30V
Supplier Device Package: 6-SMD
Produkt ist nicht verfügbar
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4N33TVM 4N33TVM onsemi H11B1M-D.pdf Description: OPTOISO 4.17KV DARL W/BASE 6-DIP
Packaging: Tube
Package / Case: 6-DIP (0.400", 10.16mm)
Output Type: Darlington with Base
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 100°C
Voltage - Forward (Vf) (Typ): 1.2V
Input Type: DC
Current - Output / Channel: 150mA
Voltage - Isolation: 4170Vrms
Current Transfer Ratio (Min): 500% @ 10mA
Vce Saturation (Max): 1V
Supplier Device Package: 6-DIP
Voltage - Output (Max): 30V
Turn On / Turn Off Time (Typ): 5µs, 100µs (Max)
Part Status: Active
Number of Channels: 1
Current - DC Forward (If) (Max): 80 mA
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4N35M_F132 4N35M_F132 onsemi 4N25-28_35-37%2C%20H11A1-A5.pdf Description: OPTOISO 4.17KV TRANS W/BASE 6DIP
Packaging: Bulk
Package / Case: 6-DIP (0.300", 7.62mm)
Output Type: Transistor with Base
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 100°C
Voltage - Forward (Vf) (Typ): 1.18V
Input Type: DC
Voltage - Isolation: 4170Vrms
Current Transfer Ratio (Min): 100% @ 10mA
Vce Saturation (Max): 300mV
Supplier Device Package: 6-DIP
Voltage - Output (Max): 30V
Turn On / Turn Off Time (Typ): 2µs, 2µs
Part Status: Obsolete
Number of Channels: 1
Current - DC Forward (If) (Max): 60 mA
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4N37M_F132 4N37M_F132 onsemi 4N25-28_35-37%2C%20H11A1-A5.pdf Description: OPTOISO 4.17KV TRANS W/BASE 6DIP
Current - DC Forward (If) (Max): 60 mA
Number of Channels: 1
Part Status: Obsolete
Voltage - Isolation: 4170Vrms
Input Type: DC
Voltage - Forward (Vf) (Typ): 1.18V
Operating Temperature: -40°C ~ 100°C
Mounting Type: Through Hole
Output Type: Transistor with Base
Turn On / Turn Off Time (Typ): 2µs, 2µs
Voltage - Output (Max): 30V
Supplier Device Package: 6-DIP
Vce Saturation (Max): 300mV
Current Transfer Ratio (Min): 100% @ 10mA
Package / Case: 6-DIP (0.300", 7.62mm)
Packaging: Bulk
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74LCX373BQX 74LCX373BQX onsemi DS_488_74LCX373.pdf Description: IC D-TYPE TRANSP 8:8 20-DQFN
Supplier Device Package: 20-DQFN (2.5x4.5)
Delay Time - Propagation: 1.5ns
Current - Output High, Low: 24mA, 24mA
Independent Circuits: 1
Voltage - Supply: 2V ~ 3.6V
Operating Temperature: -40°C ~ 85°C
Logic Type: D-Type Transparent Latch
Circuit: 8:8
Mounting Type: Surface Mount
Output Type: Tri-State
Package / Case: 20-WFQFN Exposed Pad
Packaging: Tape & Reel (TR)
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74LCX541BQX 74LCX541BQX onsemi Description: IC BUF NON-INVERT 3.6V 20DQFN
Part Status: Obsolete
Supplier Device Package: 20-DQFN (2.5x4.5)
Current - Output High, Low: 24mA, 24mA
Number of Bits per Element: 8
Voltage - Supply: 2V ~ 3.6V
Operating Temperature: -40°C ~ 85°C (TA)
Logic Type: Buffer, Non-Inverting
Number of Elements: 1
Mounting Type: Surface Mount
Output Type: 3-State
Package / Case: 20-WFQFN Exposed Pad
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar
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74VCX162839MTDX 74VCX162839MTDX onsemi 74VCX162839.pdf Description: IC REGISTER BUFFER 56-TSSOP
Number of Bits per Element: 20
Supplier Device Package: 56-TSSOP
Voltage - Supply: 1.65V ~ 3.6V
Operating Temperature: -40°C ~ 85°C
Logic Type: Register, Multiplexed
Function: Universal
Number of Elements: 1
Mounting Type: Surface Mount
Output Type: Tri-State
Package / Case: 56-TFSOP (0.240", 6.10mm Width)
Packaging: Tape & Reel (TR)
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74VCX16839MTD 74VCX16839MTD onsemi 74VCX16839.pdf Description: IC BUF NON-INVERT 3.6V 56TSSOP
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74VCX16839MTDX 74VCX16839MTDX onsemi 74VCX16839.pdf Description: IC BUF NON-INVERT 3.6V 56TSSOP
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BAX16 BAX16 onsemi BAX16-D.pdf Description: DIODE STANDARD 150V 200MA DO35
Current - Reverse Leakage @ Vr: 100 nA @ 150 V
Voltage - Forward (Vf) (Max) @ If: 650 mV @ 1 mA
Voltage - DC Reverse (Vr) (Max): 150 V
Part Status: Active
Operating Temperature - Junction: 175°C (Max)
Supplier Device Package: DO-35
Current - Average Rectified (Io): 200mA
Technology: Standard
Reverse Recovery Time (trr): 120 ns
Speed: Small Signal =< 200mA (Io), Any Speed
Mounting Type: Through Hole
Package / Case: DO-204AH, DO-35, Axial
Packaging: Bulk
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63+0.33 EUR
103+0.2 EUR
157+0.13 EUR
500+0.09 EUR
1000+0.073 EUR
2000+0.069 EUR
5000+0.065 EUR
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BAX16TR BAX16TR onsemi FAIRS26047-1.pdf?t.download=true&u=5oefqw Description: DIODE GEN PURP 150V 200MA DO35
Current - Reverse Leakage @ Vr: 100 nA @ 150 V
Voltage - Forward (Vf) (Max) @ If: 650 mV @ 1 mA
Voltage - DC Reverse (Vr) (Max): 150 V
Part Status: Active
Operating Temperature - Junction: 175°C (Max)
Supplier Device Package: DO-35
Current - Average Rectified (Io): 200mA
Technology: Standard
Reverse Recovery Time (trr): 120 ns
Speed: Small Signal =< 200mA (Io), Any Speed
Mounting Type: Through Hole
Package / Case: DO-204AH, DO-35, Axial
Packaging: Tape & Reel (TR)
auf Bestellung 20000 Stücke:
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10000+0.08 EUR
Mindestbestellmenge: 10000 Stücke
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BC182B_J35Z BC182B_J35Z onsemi BC182B.pdf Description: TRANS NPN 50V 0.1A TO-92-3
Power - Max: 350 mW
Voltage - Collector Emitter Breakdown (Max): 50 V
Current - Collector (Ic) (Max): 100 mA
Part Status: Obsolete
Supplier Device Package: TO-92-3
Frequency - Transition: 150MHz
DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 10µA, 5V
Current - Collector Cutoff (Max): 15nA (ICBO)
Vce Saturation (Max) @ Ib, Ic: 600mV @ 5mA, 100mA
Operating Temperature: -55°C ~ 150°C (TJ)
Transistor Type: NPN
Mounting Type: Through Hole
Package / Case: TO-226-3, TO-92-3 (TO-226AA) Formed Leads
Packaging: Bulk
Produkt ist nicht verfügbar
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BC182LA_J35Z BC182LA_J35Z onsemi BC182L.pdf Description: TRANS NPN 50V 0.1A TO92-3
Voltage - Collector Emitter Breakdown (Max): 50 V
Current - Collector (Ic) (Max): 100 mA
Part Status: Obsolete
Supplier Device Package: TO-92-3
Operating Temperature: -55°C ~ 150°C (TJ)
Transistor Type: NPN
Mounting Type: Through Hole
Package / Case: TO-226-3, TO-92-3 (TO-226AA) Formed Leads
Packaging: Bulk
Produkt ist nicht verfügbar
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BC182LB_J35Z BC182LB_J35Z onsemi BC182LB.pdf Description: TRANS NPN 50V 0.1A TO92-3
Power - Max: 350 mW
Voltage - Collector Emitter Breakdown (Max): 50 V
Current - Collector (Ic) (Max): 100 mA
Part Status: Obsolete
Supplier Device Package: TO-92-3
Frequency - Transition: 150MHz
DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 10µA, 5V
Current - Collector Cutoff (Max): 15nA (ICBO)
Vce Saturation (Max) @ Ib, Ic: 600mV @ 5mA, 100mA
Operating Temperature: -55°C ~ 150°C (TJ)
Transistor Type: NPN
Mounting Type: Through Hole
Package / Case: TO-226-3, TO-92-3 (TO-226AA) Formed Leads
Packaging: Bulk
Produkt ist nicht verfügbar
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BC182L_J35Z BC182L_J35Z onsemi BC182L.pdf Description: TRANS NPN 50V 0.1A TO92-3
Power - Max: 350 mW
Voltage - Collector Emitter Breakdown (Max): 50 V
Current - Collector (Ic) (Max): 100 mA
Part Status: Obsolete
Supplier Device Package: TO-92-3
Frequency - Transition: 150MHz
DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 2mA, 5V
Current - Collector Cutoff (Max): 15nA (ICBO)
Vce Saturation (Max) @ Ib, Ic: 600mV @ 5mA, 100mA
Operating Temperature: -55°C ~ 150°C (TJ)
Transistor Type: NPN
Mounting Type: Through Hole
Package / Case: TO-226-3, TO-92-3 (TO-226AA) Formed Leads
Packaging: Bulk
Produkt ist nicht verfügbar
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BC182_J35Z BC182_J35Z onsemi BC182.pdf Description: TRANS NPN 50V 0.1A TO92-3
Power - Max: 350 mW
Voltage - Collector Emitter Breakdown (Max): 50 V
Current - Collector (Ic) (Max): 100 mA
Part Status: Obsolete
Supplier Device Package: TO-92-3
Frequency - Transition: 150MHz
DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 2mA, 5V
Current - Collector Cutoff (Max): 15nA (ICBO)
Vce Saturation (Max) @ Ib, Ic: 600mV @ 5mA, 100mA
Operating Temperature: -55°C ~ 150°C (TJ)
Transistor Type: NPN
Mounting Type: Through Hole
Package / Case: TO-226-3, TO-92-3 (TO-226AA) Formed Leads
Packaging: Bulk
Produkt ist nicht verfügbar
 Mindestbestellmenge: 2000 Stücke
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BC183C_J35Z BC183C_J35Z onsemi BC183C.pdf Description: TRANS NPN 30V 0.1A TO-92-3
Power - Max: 350 mW
Voltage - Collector Emitter Breakdown (Max): 30 V
Current - Collector (Ic) (Max): 100 mA
Supplier Device Package: TO-92-3
Frequency - Transition: 150MHz
DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 2mA, 5V
Current - Collector Cutoff (Max): 15nA (ICBO)
Vce Saturation (Max) @ Ib, Ic: 600mV @ 5mA, 100mA
Operating Temperature: -55°C ~ 150°C (TJ)
Transistor Type: NPN
Mounting Type: Through Hole
Package / Case: TO-226-3, TO-92-3 (TO-226AA) Formed Leads
Packaging: Bulk
Produkt ist nicht verfügbar
 Mindestbestellmenge: 2000 Stücke
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BC183LC_J35Z BC183LC_J35Z onsemi BC183.pdf Description: TRANS NPN 30V 0.1A TO-92-3
Transistor Type: NPN
Mounting Type: Through Hole
Package / Case: TO-226-3, TO-92-3 (TO-226AA) Formed Leads
Packaging: Bulk
Power - Max: 350 mW
Voltage - Collector Emitter Breakdown (Max): 30 V
Current - Collector (Ic) (Max): 100 mA
Supplier Device Package: TO-92-3
Frequency - Transition: 150MHz
DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 10µA, 5V
Current - Collector Cutoff (Max): 15nA (ICBO)
Vce Saturation (Max) @ Ib, Ic: 600mV @ 5mA, 100mA
Operating Temperature: -55°C ~ 150°C (TJ)
Produkt ist nicht verfügbar
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BC183_J35Z BC183_J35Z onsemi BC183.pdf Description: TRANS NPN 30V 0.1A TO-92-3
Power - Max: 350 mW
Voltage - Collector Emitter Breakdown (Max): 30 V
Current - Collector (Ic) (Max): 100 mA
Supplier Device Package: TO-92-3
Frequency - Transition: 150MHz
DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 10µA, 5V
Current - Collector Cutoff (Max): 15nA (ICBO)
Vce Saturation (Max) @ Ib, Ic: 600mV @ 5mA, 100mA
Operating Temperature: -55°C ~ 150°C (TJ)
Transistor Type: NPN
Mounting Type: Through Hole
Package / Case: TO-226-3, TO-92-3 (TO-226AA) Formed Leads
Packaging: Bulk
Produkt ist nicht verfügbar
 Mindestbestellmenge: 2000 Stücke
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BC184C_J35Z BC184C_J35Z onsemi BC184C.pdf Description: TRANS NPN 30V 0.5A TO-92-3
Frequency - Transition: 150MHz
DC Current Gain (hFE) (Min) @ Ic, Vce: 250 @ 2mA, 5V
Current - Collector Cutoff (Max): 15nA (ICBO)
Vce Saturation (Max) @ Ib, Ic: 250mV @ 5mA, 100mA
Operating Temperature: 150°C (TJ)
Transistor Type: NPN
Mounting Type: Through Hole
Package / Case: TO-226-3, TO-92-3 (TO-226AA) Formed Leads
Packaging: Bulk
Power - Max: 350 mW
Voltage - Collector Emitter Breakdown (Max): 30 V
Current - Collector (Ic) (Max): 500 mA
Part Status: Obsolete
Supplier Device Package: TO-92-3
Produkt ist nicht verfügbar
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BC184LC_J35Z BC184LC_J35Z onsemi BC184LC.pdf Description: TRANS NPN 30V 0.2A TO92-3
Part Status: Obsolete
Supplier Device Package: TO-92-3
Frequency - Transition: 150MHz
DC Current Gain (hFE) (Min) @ Ic, Vce: 130 @ 100mA, 5V
Current - Collector Cutoff (Max): 15nA (ICBO)
Vce Saturation (Max) @ Ib, Ic: 600mV @ 5mA, 100mA
Operating Temperature: 150°C (TJ)
Transistor Type: NPN
Mounting Type: Through Hole
Package / Case: TO-226-3, TO-92-3 (TO-226AA) Formed Leads
Packaging: Bulk
Power - Max: 625 mW
Voltage - Collector Emitter Breakdown (Max): 30 V
Current - Collector (Ic) (Max): 200 mA
Produkt ist nicht verfügbar
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BC184L_J35Z BC184L_J35Z onsemi BC184L.pdf Description: TRANS NPN 30V 0.5A TO-92-3
Power - Max: 350 mW
Voltage - Collector Emitter Breakdown (Max): 30 V
Current - Collector (Ic) (Max): 500 mA
Part Status: Obsolete
Supplier Device Package: TO-92-3
Frequency - Transition: 150MHz
DC Current Gain (hFE) (Min) @ Ic, Vce: 130 @ 100mA, 5V
Current - Collector Cutoff (Max): 15nA (ICBO)
Vce Saturation (Max) @ Ib, Ic: 250mV @ 5mA, 100mA
Operating Temperature: 150°C (TJ)
Transistor Type: NPN
Mounting Type: Through Hole
Package / Case: TO-226-3, TO-92-3 (TO-226AA) Formed Leads
Packaging: Bulk
Produkt ist nicht verfügbar
 Mindestbestellmenge: 2000 Stücke
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BC184_J35Z BC184_J35Z onsemi BC184.pdf Description: TRANS NPN 30V 0.1A TO-92-3
Power - Max: 350 mW
Voltage - Collector Emitter Breakdown (Max): 30 V
Current - Collector (Ic) (Max): 100 mA
Part Status: Obsolete
Supplier Device Package: TO-92-3
Frequency - Transition: 150MHz
DC Current Gain (hFE) (Min) @ Ic, Vce: 130 @ 100mA, 5V
Current - Collector Cutoff (Max): 15nA (ICBO)
Vce Saturation (Max) @ Ib, Ic: 600mV @ 5mA, 100mA
Operating Temperature: -55°C ~ 150°C (TJ)
Transistor Type: NPN
Mounting Type: Through Hole
Package / Case: TO-226-3, TO-92-3 (TO-226AA) Formed Leads
Packaging: Bulk
Produkt ist nicht verfügbar
 Mindestbestellmenge: 2000 Stücke
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BC212B_J35Z BC212B_J35Z onsemi BC212B.pdf Description: TRANS PNP 50V 0.1A TO-92-3
Packaging: Bulk
Package / Case: TO-226-3, TO-92-3 (TO-226AA) Formed Leads
Mounting Type: Through Hole
Transistor Type: PNP
Operating Temperature: -55°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 600mV @ 5mA, 100mA
Current - Collector Cutoff (Max): 15nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 60 @ 2mA, 5V
Supplier Device Package: TO-92-3
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 350 mW
Produkt ist nicht verfügbar
 Mindestbestellmenge: 2000 Stücke
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BC212L_J35Z BC212L_J35Z onsemi BC212L.pdf Description: TRANS PNP 50V 0.3A TO-92-3
Packaging: Bulk
Package / Case: TO-226-3, TO-92-3 (TO-226AA) Formed Leads
Mounting Type: Through Hole
Transistor Type: PNP
Operating Temperature: -55°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 600mV @ 5mA, 100mA
Current - Collector Cutoff (Max): 15nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 60 @ 2mA, 5V
Frequency - Transition: 200MHz
Supplier Device Package: TO-92-3
Current - Collector (Ic) (Max): 300 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 625 mW
Produkt ist nicht verfügbar
 Mindestbestellmenge: 2000 Stücke
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BC214LB_J35Z BC214LB_J35Z onsemi BC214LB.pdf Description: TRANS PNP 30V 0.5A TO92-3
Power - Max: 625 mW
Voltage - Collector Emitter Breakdown (Max): 30 V
Current - Collector (Ic) (Max): 500 mA
Supplier Device Package: TO-92-3
Frequency - Transition: 200MHz
DC Current Gain (hFE) (Min) @ Ic, Vce: 140 @ 2mA, 5V
Current - Collector Cutoff (Max): 15nA (ICBO)
Vce Saturation (Max) @ Ib, Ic: 600mV @ 5mA, 100mA
Operating Temperature: -55°C ~ 150°C (TJ)
Transistor Type: PNP
Mounting Type: Through Hole
Package / Case: TO-226-3, TO-92-3 (TO-226AA) Formed Leads
Packaging: Bulk
Produkt ist nicht verfügbar
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BC214LC_J35Z BC214LC_J35Z onsemi BC214LC.pdf Description: TRANS PNP 30V 0.5A TO92-3
Power - Max: 625 mW
Voltage - Collector Emitter Breakdown (Max): 30 V
Current - Collector (Ic) (Max): 500 mA
Supplier Device Package: TO-92-3
Frequency - Transition: 200MHz
DC Current Gain (hFE) (Min) @ Ic, Vce: 140 @ 2mA, 5V
Current - Collector Cutoff (Max): 15nA (ICBO)
Vce Saturation (Max) @ Ib, Ic: 600mV @ 5mA, 100mA
Operating Temperature: -55°C ~ 150°C (TJ)
Transistor Type: PNP
Mounting Type: Through Hole
Package / Case: TO-226-3, TO-92-3 (TO-226AA) Formed Leads
Packaging: Bulk
Produkt ist nicht verfügbar
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BC214L_J35Z BC214L_J35Z onsemi BC214L.pdf Description: TRANS PNP 30V 0.5A TO92-3
Power - Max: 625 mW
Voltage - Collector Emitter Breakdown (Max): 30 V
Current - Collector (Ic) (Max): 500 mA
Supplier Device Package: TO-92-3
Frequency - Transition: 200MHz
DC Current Gain (hFE) (Min) @ Ic, Vce: 140 @ 2mA, 5V
Current - Collector Cutoff (Max): 15nA (ICBO)
Vce Saturation (Max) @ Ib, Ic: 600mV @ 5mA, 100mA
Operating Temperature: -55°C ~ 150°C (TJ)
Transistor Type: PNP
Mounting Type: Through Hole
Package / Case: TO-226-3, TO-92-3 (TO-226AA) Formed Leads
Packaging: Bulk
Produkt ist nicht verfügbar
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BC214_J35Z BC214_J35Z onsemi BC214.pdf Description: TRANS PNP 30V 0.5A TO-92-3
Mounting Type: Through Hole
Package / Case: TO-226-3, TO-92-3 (TO-226AA) Formed Leads
Packaging: Bulk
Power - Max: 625 mW
Voltage - Collector Emitter Breakdown (Max): 30 V
Current - Collector (Ic) (Max): 500 mA
Supplier Device Package: TO-92-3
Frequency - Transition: 200MHz
DC Current Gain (hFE) (Min) @ Ic, Vce: 140 @ 2mA, 5V
Current - Collector Cutoff (Max): 15nA (ICBO)
Vce Saturation (Max) @ Ib, Ic: 600mV @ 5mA, 100mA
Operating Temperature: -55°C ~ 150°C (TJ)
Transistor Type: PNP
Produkt ist nicht verfügbar
 Mindestbestellmenge: 2000 Stücke
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BC237A_J35Z BC237A_J35Z onsemi BC23x.pdf Description: TRANS NPN 45V 0.1A TO92-3
Power - Max: 500 mW
Voltage - Collector Emitter Breakdown (Max): 45 V
Current - Collector (Ic) (Max): 100 mA
Part Status: Obsolete
Supplier Device Package: TO-92-3
Frequency - Transition: 250MHz
DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 2mA, 5V
Current - Collector Cutoff (Max): 15nA
Vce Saturation (Max) @ Ib, Ic: 600mV @ 5mA, 100mA
Operating Temperature: 150°C (TJ)
Transistor Type: NPN
Mounting Type: Through Hole
Package / Case: TO-226-3, TO-92-3 (TO-226AA) Formed Leads
Packaging: Bulk
Produkt ist nicht verfügbar
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BC237B_J35Z BC237B_J35Z onsemi BC23x.pdf Description: TRANS NPN 45V 0.1A TO92-3
Voltage - Collector Emitter Breakdown (Max): 45 V
Current - Collector (Ic) (Max): 100 mA
Part Status: Obsolete
Supplier Device Package: TO-92-3
Frequency - Transition: 250MHz
DC Current Gain (hFE) (Min) @ Ic, Vce: 180 @ 2mA, 5V
Current - Collector Cutoff (Max): 15nA
Vce Saturation (Max) @ Ib, Ic: 600mV @ 5mA, 100mA
Operating Temperature: 150°C (TJ)
Transistor Type: NPN
Mounting Type: Through Hole
Package / Case: TO-226-3, TO-92-3 (TO-226AA) Formed Leads
Packaging: Bulk
Power - Max: 500 mW
Produkt ist nicht verfügbar
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BC237_J35Z BC237_J35Z onsemi BC23x.pdf Description: TRANS NPN 45V 0.1A TO-92-3
Frequency - Transition: 250MHz
DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 2mA, 5V
Current - Collector Cutoff (Max): 15nA
Vce Saturation (Max) @ Ib, Ic: 600mV @ 5mA, 100mA
Operating Temperature: 150°C (TJ)
Transistor Type: NPN
Mounting Type: Through Hole
Package / Case: TO-226-3, TO-92-3 (TO-226AA) Formed Leads
Packaging: Bulk
Power - Max: 500 mW
Voltage - Collector Emitter Breakdown (Max): 45 V
Current - Collector (Ic) (Max): 100 mA
Part Status: Obsolete
Supplier Device Package: TO-92-3
Produkt ist nicht verfügbar
 Mindestbestellmenge: 2000 Stücke
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BC238A_J35Z BC238A_J35Z onsemi BC23x.pdf Description: TRANS NPN 25V 0.1A TO92-3
Packaging: Bulk
Current - Collector (Ic) (Max): 100 mA
Part Status: Obsolete
Supplier Device Package: TO-92-3
Frequency - Transition: 250MHz
DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 2mA, 5V
Current - Collector Cutoff (Max): 15nA
Vce Saturation (Max) @ Ib, Ic: 600mV @ 5mA, 100mA
Operating Temperature: 150°C (TJ)
Transistor Type: NPN
Mounting Type: Through Hole
Package / Case: TO-226-3, TO-92-3 (TO-226AA) Formed Leads
Power - Max: 500 mW
Voltage - Collector Emitter Breakdown (Max): 25 V
Produkt ist nicht verfügbar
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BC238_J35Z BC238_J35Z onsemi BC23x.pdf Description: TRANS NPN 25V 0.1A TO-92-3
Power - Max: 500 mW
Voltage - Collector Emitter Breakdown (Max): 25 V
Packaging: Bulk
Current - Collector (Ic) (Max): 100 mA
Part Status: Obsolete
Supplier Device Package: TO-92-3
Frequency - Transition: 250MHz
DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 2mA, 5V
Current - Collector Cutoff (Max): 15nA
Vce Saturation (Max) @ Ib, Ic: 600mV @ 5mA, 100mA
Operating Temperature: 150°C (TJ)
Transistor Type: NPN
Mounting Type: Through Hole
Package / Case: TO-226-3, TO-92-3 (TO-226AA) Formed Leads
Produkt ist nicht verfügbar
 Mindestbestellmenge: 2000 Stücke
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BC307B_J35Z BC307B_J35Z onsemi BC30x.pdf Description: TRANS PNP 45V 0.1A TO-92-3
Power - Max: 500 mW
Voltage - Collector Emitter Breakdown (Max): 45 V
Current - Collector (Ic) (Max): 100 mA
Part Status: Obsolete
Supplier Device Package: TO-92-3
Frequency - Transition: 130MHz
DC Current Gain (hFE) (Min) @ Ic, Vce: 180 @ 2mA, 5V
Current - Collector Cutoff (Max): 15nA
Vce Saturation (Max) @ Ib, Ic: 500mV @ 5mA, 100mA
Operating Temperature: 150°C (TJ)
Transistor Type: PNP
Mounting Type: Through Hole
Package / Case: TO-226-3, TO-92-3 (TO-226AA) Formed Leads
Packaging: Bulk
Produkt ist nicht verfügbar
 Mindestbestellmenge: 2000 Stücke
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BC307_J35Z BC307_J35Z onsemi BC30x.pdf Description: TRANS PNP 45V 0.1A TO-92-3
Power - Max: 500 mW
Voltage - Collector Emitter Breakdown (Max): 45 V
Current - Collector (Ic) (Max): 100 mA
Part Status: Obsolete
Supplier Device Package: TO-92-3
Frequency - Transition: 130MHz
DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 2mA, 5V
Current - Collector Cutoff (Max): 15nA
Vce Saturation (Max) @ Ib, Ic: 500mV @ 5mA, 100mA
Operating Temperature: 150°C (TJ)
Transistor Type: PNP
Mounting Type: Through Hole
Package / Case: TO-226-3, TO-92-3 (TO-226AA) Formed Leads
Packaging: Bulk
Produkt ist nicht verfügbar
 Mindestbestellmenge: 2000 Stücke
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BC308A_J35Z BC308A_J35Z onsemi BC30x.pdf Description: TRANS PNP 25V 0.1A TO-92-3
Current - Collector (Ic) (Max): 100 mA
Part Status: Obsolete
Supplier Device Package: TO-92-3
Frequency - Transition: 130MHz
DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 2mA, 5V
Current - Collector Cutoff (Max): 15nA
Vce Saturation (Max) @ Ib, Ic: 500mV @ 5mA, 100mA
Operating Temperature: 150°C (TJ)
Power - Max: 500 mW
Voltage - Collector Emitter Breakdown (Max): 25 V
Transistor Type: PNP
Mounting Type: Through Hole
Package / Case: TO-226-3, TO-92-3 (TO-226AA) Formed Leads
Packaging: Bulk
Produkt ist nicht verfügbar
 Mindestbestellmenge: 2000 Stücke
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FDA24N50 fda24n50-d.pdf
FDA24N50
Hersteller: onsemi
Description: MOSFET N-CH 500V 24A TO3PN
Packaging: Tube
Package / Case: TO-3P-3, SC-65-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 24A (Tc)
Rds On (Max) @ Id, Vgs: 190mOhm @ 12A, 10V
Power Dissipation (Max): 270W (Tc)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: TO-3PN
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 500 V
Gate Charge (Qg) (Max) @ Vgs: 85 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4150 pF @ 25 V
Produkt ist nicht verfügbar
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FDA28N50 FDA28N50-D.pdf
FDA28N50
Hersteller: onsemi
Description: MOSFET N-CH 500V 28A TO3PN
Packaging: Tube
Package / Case: TO-3P-3, SC-65-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 28A (Tc)
Rds On (Max) @ Id, Vgs: 155mOhm @ 14A, 10V
Power Dissipation (Max): 310W (Tc)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: TO-3PN
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 500 V
Gate Charge (Qg) (Max) @ Vgs: 105 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 5140 pF @ 25 V
auf Bestellung 261 Stücke:
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2+10.95 EUR
30+6.21 EUR
120+5.18 EUR
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FGH60N60SFDTU fgh60n60sfd-d.pdf
FGH60N60SFDTU
Hersteller: onsemi
Description: IGBT FIELD STOP 600V 120A TO-247
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 47 ns
Vce(on) (Max) @ Vge, Ic: 2.9V @ 15V, 60A
Supplier Device Package: TO-247-3
IGBT Type: Field Stop
Td (on/off) @ 25°C: 22ns/134ns
Switching Energy: 1.79mJ (on), 670µJ (off)
Test Condition: 400V, 60A, 5Ohm, 15V
Gate Charge: 198 nC
Part Status: Obsolete
Current - Collector (Ic) (Max): 120 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 180 A
Power - Max: 378 W
Produkt ist nicht verfügbar
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FGH60N60UFDTU fgh60n60ufd-d.pdf
FGH60N60UFDTU
Hersteller: onsemi
Description: IGBT FIELD STOP 600V 120A TO-247
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 47 ns
Vce(on) (Max) @ Vge, Ic: 2.4V @ 15V, 60A
Supplier Device Package: TO-247-3
IGBT Type: Field Stop
Td (on/off) @ 25°C: 23ns/130ns
Switching Energy: 1.81mJ (on), 810µJ (off)
Test Condition: 400V, 60A, 5Ohm, 15V
Gate Charge: 188 nC
Part Status: Obsolete
Current - Collector (Ic) (Max): 120 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 180 A
Power - Max: 298 W
Produkt ist nicht verfügbar
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FSUSB104UMX fsusb104-d.pdf
FSUSB104UMX
Hersteller: onsemi
Description: IC USB SWITCH DUAL DPDT 10UMLP
Number of Channels: 1
Switch Circuit: DPDT
Voltage - Supply, Single (V+): 3V ~ 4.4V
Supplier Device Package: 10-UMLP (1.8x1.4)
-3db Bandwidth: 720MHz
On-State Resistance (Max): 6.5Ohm
Applications: USB
Operating Temperature: -40°C ~ 85°C (TA)
Mounting Type: Surface Mount
Package / Case: 10-UFQFN
Features: Bi-Directional, USB 2.0
Packaging: Tape & Reel (TR)
auf Bestellung 5000 Stücke:
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AnzahlPrivatkunde
5000+0.64 EUR
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SG6521SZ SG6521.pdf
SG6521SZ
Hersteller: onsemi
Description: IC SUPERVISOR 4 CHANNEL 16SOP
Produkt ist nicht verfügbar
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FSUSB104UMX fsusb104-d.pdf
FSUSB104UMX
Hersteller: onsemi
Description: IC USB SWITCH DUAL DPDT 10UMLP
Number of Channels: 1
Switch Circuit: DPDT
Voltage - Supply, Single (V+): 3V ~ 4.4V
Supplier Device Package: 10-UMLP (1.8x1.4)
-3db Bandwidth: 720MHz
On-State Resistance (Max): 6.5Ohm
Applications: USB
Operating Temperature: -40°C ~ 85°C (TA)
Mounting Type: Surface Mount
Package / Case: 10-UFQFN
Features: Bi-Directional, USB 2.0
Packaging: Cut Tape (CT)
auf Bestellung 13767 Stücke:
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AnzahlPrivatkunde
8+2.84 EUR
12+1.75 EUR
25+1.46 EUR
100+1.13 EUR
250+0.98 EUR
500+0.88 EUR
1000+0.8 EUR
2500+0.7 EUR
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SG6521SZ SG6521.pdf
SG6521SZ
Hersteller: onsemi
Description: IC SUPERVISOR 4 CHANNEL 16SOP
Produkt ist nicht verfügbar
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1N4002_NL 1N4001.pdf
1N4002_NL
Hersteller: onsemi
Description: DIODE STANDARD 100V 1A DO41
Packaging: Tape & Reel (TR)
Package / Case: DO-204AL, DO-41, Axial
Mounting Type: Through Hole
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard
Capacitance @ Vr, F: 15pF @ 4V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: DO-41
Operating Temperature - Junction: -55°C ~ 175°C
Part Status: Obsolete
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 1 A
Current - Reverse Leakage @ Vr: 10 µA @ 100 V
Produkt ist nicht verfügbar
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1N4004_NL 1N4001.pdf
1N4004_NL
Hersteller: onsemi
Description: DIODE STANDARD 400V 1A DO41
Packaging: Tape & Reel (TR)
Package / Case: DO-204AL, DO-41, Axial
Mounting Type: Through Hole
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard
Capacitance @ Vr, F: 15pF @ 4V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: DO-41
Operating Temperature - Junction: -55°C ~ 175°C
Part Status: Obsolete
Voltage - DC Reverse (Vr) (Max): 400 V
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 1 A
Current - Reverse Leakage @ Vr: 10 µA @ 400 V
Current Coupled to Voltage - Forward (Vf) (Max) @ If: 1
Voltage Coupled to Current - Reverse Leakage @ Vr: 400
Produkt ist nicht verfügbar
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1N4448WT 1N914BWT-D.pdf
1N4448WT
Hersteller: onsemi
Description: DIODE STANDARD 75V 200MA SOD523F
Packaging: Tape & Reel (TR)
Package / Case: SC-79, SOD-523F
Mounting Type: Surface Mount
Speed: Small Signal =< 200mA (Io), Any Speed
Reverse Recovery Time (trr): 4 ns
Technology: Standard
Capacitance @ Vr, F: 4pF @ 0V, 1MHz
Current - Average Rectified (Io): 200mA
Supplier Device Package: SOD-523F
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 75 V
Voltage - Forward (Vf) (Max) @ If: 1 V @ 100 mA
Current - Reverse Leakage @ Vr: 5 µA @ 75 V
auf Bestellung 16000 Stücke:
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AnzahlPrivatkunde
8000+0.058 EUR
16000+0.052 EUR
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1N5231C 1n5221b-d.pdf
1N5231C
Hersteller: onsemi
Description: DIODE ZENER 5.1V 500MW DO35
Packaging: Bulk
Current - Reverse Leakage @ Vr: 5 µA @ 2 V
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 200 mA
Power - Max: 500 mW
Part Status: Active
Supplier Device Package: DO-35
Impedance (Max) (Zzt): 17 Ohms
Voltage - Zener (Nom) (Vz): 5.1 V
Operating Temperature: -65°C ~ 200°C
Mounting Type: Through Hole
Package / Case: DO-204AH, DO-35, Axial
Tolerance: ±2%
auf Bestellung 2741 Stücke:
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AnzahlPrivatkunde
112+0.19 EUR
228+0.092 EUR
400+0.052 EUR
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1N5231CTR 1N5221B-D.PDF
1N5231CTR
Hersteller: onsemi
Description: DIODE ZENER 5.1V 500MW DO35
Current - Reverse Leakage @ Vr: 5 µA @ 2 V
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 200 mA
Power - Max: 500 mW
Impedance (Max) (Zzt): 17 Ohms
Voltage - Zener (Nom) (Vz): 5.1 V
Operating Temperature: -65°C ~ 200°C
Mounting Type: Through Hole
Package / Case: DO-204AH, DO-35, Axial
Tolerance: ±2%
Packaging: Tape & Reel (TR)
Part Status: Active
Supplier Device Package: DO-35
auf Bestellung 85000 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
5000+0.051 EUR
10000+0.046 EUR
Mindestbestellmenge: 5000 Stücke
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1N914BWT 1N914BWT-D.pdf
1N914BWT
Hersteller: onsemi
Description: DIODE STANDARD 75V 200MA SOD523F
Packaging: Tape & Reel (TR)
Package / Case: SC-79, SOD-523F
Mounting Type: Surface Mount
Speed: Small Signal =< 200mA (Io), Any Speed
Reverse Recovery Time (trr): 4 ns
Technology: Standard
Capacitance @ Vr, F: 4pF @ 0V, 1MHz
Current - Average Rectified (Io): 200mA
Supplier Device Package: SOD-523F
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 75 V
Voltage - Forward (Vf) (Max) @ If: 1 V @ 100 mA
Current - Reverse Leakage @ Vr: 5 µA @ 75 V
auf Bestellung 1556900 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
8000+0.051 EUR
16000+0.045 EUR
Mindestbestellmenge: 8000 Stücke
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2N5245_J35Z 2N5245.pdf
2N5245_J35Z
Hersteller: onsemi
Description: RF MOSFET JFET 30V TO92-3
Voltage - Rated: 30 V
Part Status: Obsolete
Supplier Device Package: TO-92-3
Technology: JFET
Configuration: N-Channel
Mounting Type: Through Hole
Current Rating (Amps): 15mA
Package / Case: TO-226-3, TO-92-3 (TO-226AA) Formed Leads
Packaging: Bulk
Produkt ist nicht verfügbar
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2N5246_J35Z 2N5246.pdf
2N5246_J35Z
Hersteller: onsemi
Description: RF MOSFET JFET 30V TO92-3
Voltage - Rated: 30 V
Supplier Device Package: TO-92-3
Technology: JFET
Configuration: N-Channel
Mounting Type: Through Hole
Current Rating (Amps): 7mA
Package / Case: TO-226-3, TO-92-3 (TO-226AA) Formed Leads
Packaging: Bulk
Produkt ist nicht verfügbar
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2N5247_J35Z
2N5247_J35Z
Hersteller: onsemi
Description: RF MOSFET JFET 30V TO92-3
Voltage - Rated: 30 V
Supplier Device Package: TO-92-3
Noise Figure: 4dB
Technology: JFET
Configuration: N-Channel
Frequency: 400MHz
Mounting Type: Through Hole
Package / Case: TO-226-3, TO-92-3 (TO-226AA) Formed Leads
Packaging: Bulk
Produkt ist nicht verfügbar
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2N5950_J35Z 2N5950.pdf
2N5950_J35Z
Hersteller: onsemi
Description: RF MOSFET JFET 30V TO92-3
Voltage - Rated: 30 V
Part Status: Obsolete
Supplier Device Package: TO-92-3
Configuration: N-Channel
Mounting Type: Through Hole
Current Rating (Amps): 15mA
Package / Case: TO-226-3, TO-92-3 (TO-226AA) Formed Leads
Packaging: Bulk
Technology: JFET
Produkt ist nicht verfügbar
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2N5951_J35Z 2N5951.pdf
2N5951_J35Z
Hersteller: onsemi
Description: RF MOSFET JFET 15V TO92-3
Voltage - Test: 15 V
Voltage - Rated: 30 V
Part Status: Obsolete
Supplier Device Package: TO-92-3
Noise Figure: 2dB
Technology: JFET
Configuration: N-Channel
Frequency: 1kHz
Mounting Type: Through Hole
Current Rating (Amps): 13mA
Package / Case: TO-226-3, TO-92-3 (TO-226AA) Formed Leads
Packaging: Bulk
Produkt ist nicht verfügbar
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2N5952_J35Z 2N5952.pdf
2N5952_J35Z
Hersteller: onsemi
Description: RF MOSFET JFET 15V TO92-3
Voltage - Test: 15 V
Voltage - Rated: 30 V
Part Status: Obsolete
Supplier Device Package: TO-92-3
Configuration: N-Channel
Frequency: 1kHz
Mounting Type: Through Hole
Current Rating (Amps): 8mA
Package / Case: TO-226-3, TO-92-3 (TO-226AA) Formed Leads
Packaging: Bulk
Noise Figure: 2dB
Technology: JFET
Produkt ist nicht verfügbar
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2N5953_J35Z 2N5953.pdf
2N5953_J35Z
Hersteller: onsemi
Description: RF MOSFET JFET 15V TO92-3
Configuration: N-Channel
Frequency: 1kHz
Mounting Type: Through Hole
Current Rating (Amps): 5mA
Package / Case: TO-226-3, TO-92-3 (TO-226AA) Formed Leads
Packaging: Bulk
Voltage - Test: 15 V
Voltage - Rated: 30 V
Part Status: Obsolete
Supplier Device Package: TO-92-3
Noise Figure: 2dB
Technology: JFET
Produkt ist nicht verfügbar
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2N7002_NB9G002 2N7000,02(A).pdf
2N7002_NB9G002
Hersteller: onsemi
Description: MOSFET N-CH 60V 115MA SOT-23
Input Capacitance (Ciss) (Max) @ Vds: 50 pF @ 25 V
Drain to Source Voltage (Vdss): 60 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 5V, 10V
Part Status: Obsolete
Supplier Device Package: SOT-23-3
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Power Dissipation (Max): 200mW (Ta)
Rds On (Max) @ Id, Vgs: 7.5Ohm @ 500mA, 10V
Current - Continuous Drain (Id) @ 25°C: 115mA (Ta)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-236-3, SC-59, SOT-23-3
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar
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4N26M_F132 4N25-28_35-37%2C%20H11A1-A5.pdf
4N26M_F132
Hersteller: onsemi
Description: OPTOISO 4.17KV TRANS W/BASE 6DIP
Packaging: Bulk
Package / Case: 6-DIP (0.300", 7.62mm)
Output Type: Transistor with Base
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 100°C
Voltage - Forward (Vf) (Typ): 1.18V
Input Type: DC
Voltage - Isolation: 4170Vrms
Current Transfer Ratio (Min): 20% @ 10mA
Vce Saturation (Max): 500mV
Supplier Device Package: 6-DIP
Voltage - Output (Max): 30V
Turn On / Turn Off Time (Typ): 2µs, 2µs
Part Status: Obsolete
Number of Channels: 1
Current - DC Forward (If) (Max): 60 mA
Produkt ist nicht verfügbar
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4N32SVM til113m-d.pdf
4N32SVM
Hersteller: onsemi
Description: OPTOISO 4.17KV DARL W/BASE 6SMD
Vce Saturation (Max): 1V
Current Transfer Ratio (Min): 500% @ 10mA
Voltage - Isolation: 4170Vrms
Current - Output / Channel: 150mA
Input Type: DC
Voltage - Forward (Vf) (Typ): 1.2V
Operating Temperature: -40°C ~ 100°C
Mounting Type: Surface Mount
Output Type: Darlington with Base
Package / Case: 6-SMD, Gull Wing
Packaging: Bulk
Current - DC Forward (If) (Max): 80 mA
Number of Channels: 1
Part Status: Obsolete
Turn On / Turn Off Time (Typ): 5µs, 100µs (Max)
Voltage - Output (Max): 30V
Supplier Device Package: 6-SMD
Produkt ist nicht verfügbar
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4N33TVM H11B1M-D.pdf
4N33TVM
Hersteller: onsemi
Description: OPTOISO 4.17KV DARL W/BASE 6-DIP
Packaging: Tube
Package / Case: 6-DIP (0.400", 10.16mm)
Output Type: Darlington with Base
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 100°C
Voltage - Forward (Vf) (Typ): 1.2V
Input Type: DC
Current - Output / Channel: 150mA
Voltage - Isolation: 4170Vrms
Current Transfer Ratio (Min): 500% @ 10mA
Vce Saturation (Max): 1V
Supplier Device Package: 6-DIP
Voltage - Output (Max): 30V
Turn On / Turn Off Time (Typ): 5µs, 100µs (Max)
Part Status: Active
Number of Channels: 1
Current - DC Forward (If) (Max): 80 mA
auf Bestellung 1000 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
13+1.62 EUR
50+0.9 EUR
100+0.83 EUR
500+0.69 EUR
1000+0.65 EUR
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4N35M_F132 4N25-28_35-37%2C%20H11A1-A5.pdf
4N35M_F132
Hersteller: onsemi
Description: OPTOISO 4.17KV TRANS W/BASE 6DIP
Packaging: Bulk
Package / Case: 6-DIP (0.300", 7.62mm)
Output Type: Transistor with Base
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 100°C
Voltage - Forward (Vf) (Typ): 1.18V
Input Type: DC
Voltage - Isolation: 4170Vrms
Current Transfer Ratio (Min): 100% @ 10mA
Vce Saturation (Max): 300mV
Supplier Device Package: 6-DIP
Voltage - Output (Max): 30V
Turn On / Turn Off Time (Typ): 2µs, 2µs
Part Status: Obsolete
Number of Channels: 1
Current - DC Forward (If) (Max): 60 mA
Produkt ist nicht verfügbar
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4N37M_F132 4N25-28_35-37%2C%20H11A1-A5.pdf
4N37M_F132
Hersteller: onsemi
Description: OPTOISO 4.17KV TRANS W/BASE 6DIP
Current - DC Forward (If) (Max): 60 mA
Number of Channels: 1
Part Status: Obsolete
Voltage - Isolation: 4170Vrms
Input Type: DC
Voltage - Forward (Vf) (Typ): 1.18V
Operating Temperature: -40°C ~ 100°C
Mounting Type: Through Hole
Output Type: Transistor with Base
Turn On / Turn Off Time (Typ): 2µs, 2µs
Voltage - Output (Max): 30V
Supplier Device Package: 6-DIP
Vce Saturation (Max): 300mV
Current Transfer Ratio (Min): 100% @ 10mA
Package / Case: 6-DIP (0.300", 7.62mm)
Packaging: Bulk
Produkt ist nicht verfügbar
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74LCX373BQX DS_488_74LCX373.pdf
74LCX373BQX
Hersteller: onsemi
Description: IC D-TYPE TRANSP 8:8 20-DQFN
Supplier Device Package: 20-DQFN (2.5x4.5)
Delay Time - Propagation: 1.5ns
Current - Output High, Low: 24mA, 24mA
Independent Circuits: 1
Voltage - Supply: 2V ~ 3.6V
Operating Temperature: -40°C ~ 85°C
Logic Type: D-Type Transparent Latch
Circuit: 8:8
Mounting Type: Surface Mount
Output Type: Tri-State
Package / Case: 20-WFQFN Exposed Pad
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar
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74LCX541BQX
74LCX541BQX
Hersteller: onsemi
Description: IC BUF NON-INVERT 3.6V 20DQFN
Part Status: Obsolete
Supplier Device Package: 20-DQFN (2.5x4.5)
Current - Output High, Low: 24mA, 24mA
Number of Bits per Element: 8
Voltage - Supply: 2V ~ 3.6V
Operating Temperature: -40°C ~ 85°C (TA)
Logic Type: Buffer, Non-Inverting
Number of Elements: 1
Mounting Type: Surface Mount
Output Type: 3-State
Package / Case: 20-WFQFN Exposed Pad
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar
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74VCX162839MTDX 74VCX162839.pdf
74VCX162839MTDX
Hersteller: onsemi
Description: IC REGISTER BUFFER 56-TSSOP
Number of Bits per Element: 20
Supplier Device Package: 56-TSSOP
Voltage - Supply: 1.65V ~ 3.6V
Operating Temperature: -40°C ~ 85°C
Logic Type: Register, Multiplexed
Function: Universal
Number of Elements: 1
Mounting Type: Surface Mount
Output Type: Tri-State
Package / Case: 56-TFSOP (0.240", 6.10mm Width)
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar
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74VCX16839MTD 74VCX16839.pdf
74VCX16839MTD
Hersteller: onsemi
Description: IC BUF NON-INVERT 3.6V 56TSSOP
Produkt ist nicht verfügbar
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74VCX16839MTDX 74VCX16839.pdf
74VCX16839MTDX
Hersteller: onsemi
Description: IC BUF NON-INVERT 3.6V 56TSSOP
Produkt ist nicht verfügbar
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BAX16 BAX16-D.pdf
BAX16
Hersteller: onsemi
Description: DIODE STANDARD 150V 200MA DO35
Current - Reverse Leakage @ Vr: 100 nA @ 150 V
Voltage - Forward (Vf) (Max) @ If: 650 mV @ 1 mA
Voltage - DC Reverse (Vr) (Max): 150 V
Part Status: Active
Operating Temperature - Junction: 175°C (Max)
Supplier Device Package: DO-35
Current - Average Rectified (Io): 200mA
Technology: Standard
Reverse Recovery Time (trr): 120 ns
Speed: Small Signal =< 200mA (Io), Any Speed
Mounting Type: Through Hole
Package / Case: DO-204AH, DO-35, Axial
Packaging: Bulk
auf Bestellung 8196 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
63+0.33 EUR
103+0.2 EUR
157+0.13 EUR
500+0.09 EUR
1000+0.073 EUR
2000+0.069 EUR
5000+0.065 EUR
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BAX16TR FAIRS26047-1.pdf?t.download=true&u=5oefqw
BAX16TR
Hersteller: onsemi
Description: DIODE GEN PURP 150V 200MA DO35
Current - Reverse Leakage @ Vr: 100 nA @ 150 V
Voltage - Forward (Vf) (Max) @ If: 650 mV @ 1 mA
Voltage - DC Reverse (Vr) (Max): 150 V
Part Status: Active
Operating Temperature - Junction: 175°C (Max)
Supplier Device Package: DO-35
Current - Average Rectified (Io): 200mA
Technology: Standard
Reverse Recovery Time (trr): 120 ns
Speed: Small Signal =< 200mA (Io), Any Speed
Mounting Type: Through Hole
Package / Case: DO-204AH, DO-35, Axial
Packaging: Tape & Reel (TR)
auf Bestellung 20000 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
10000+0.08 EUR
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BC182B_J35Z BC182B.pdf
BC182B_J35Z
Hersteller: onsemi
Description: TRANS NPN 50V 0.1A TO-92-3
Power - Max: 350 mW
Voltage - Collector Emitter Breakdown (Max): 50 V
Current - Collector (Ic) (Max): 100 mA
Part Status: Obsolete
Supplier Device Package: TO-92-3
Frequency - Transition: 150MHz
DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 10µA, 5V
Current - Collector Cutoff (Max): 15nA (ICBO)
Vce Saturation (Max) @ Ib, Ic: 600mV @ 5mA, 100mA
Operating Temperature: -55°C ~ 150°C (TJ)
Transistor Type: NPN
Mounting Type: Through Hole
Package / Case: TO-226-3, TO-92-3 (TO-226AA) Formed Leads
Packaging: Bulk
Produkt ist nicht verfügbar
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BC182LA_J35Z BC182L.pdf
BC182LA_J35Z
Hersteller: onsemi
Description: TRANS NPN 50V 0.1A TO92-3
Voltage - Collector Emitter Breakdown (Max): 50 V
Current - Collector (Ic) (Max): 100 mA
Part Status: Obsolete
Supplier Device Package: TO-92-3
Operating Temperature: -55°C ~ 150°C (TJ)
Transistor Type: NPN
Mounting Type: Through Hole
Package / Case: TO-226-3, TO-92-3 (TO-226AA) Formed Leads
Packaging: Bulk
Produkt ist nicht verfügbar
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BC182LB_J35Z BC182LB.pdf
BC182LB_J35Z
Hersteller: onsemi
Description: TRANS NPN 50V 0.1A TO92-3
Power - Max: 350 mW
Voltage - Collector Emitter Breakdown (Max): 50 V
Current - Collector (Ic) (Max): 100 mA
Part Status: Obsolete
Supplier Device Package: TO-92-3
Frequency - Transition: 150MHz
DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 10µA, 5V
Current - Collector Cutoff (Max): 15nA (ICBO)
Vce Saturation (Max) @ Ib, Ic: 600mV @ 5mA, 100mA
Operating Temperature: -55°C ~ 150°C (TJ)
Transistor Type: NPN
Mounting Type: Through Hole
Package / Case: TO-226-3, TO-92-3 (TO-226AA) Formed Leads
Packaging: Bulk
Produkt ist nicht verfügbar
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BC182L_J35Z BC182L.pdf
BC182L_J35Z
Hersteller: onsemi
Description: TRANS NPN 50V 0.1A TO92-3
Power - Max: 350 mW
Voltage - Collector Emitter Breakdown (Max): 50 V
Current - Collector (Ic) (Max): 100 mA
Part Status: Obsolete
Supplier Device Package: TO-92-3
Frequency - Transition: 150MHz
DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 2mA, 5V
Current - Collector Cutoff (Max): 15nA (ICBO)
Vce Saturation (Max) @ Ib, Ic: 600mV @ 5mA, 100mA
Operating Temperature: -55°C ~ 150°C (TJ)
Transistor Type: NPN
Mounting Type: Through Hole
Package / Case: TO-226-3, TO-92-3 (TO-226AA) Formed Leads
Packaging: Bulk
Produkt ist nicht verfügbar
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BC182_J35Z BC182.pdf
BC182_J35Z
Hersteller: onsemi
Description: TRANS NPN 50V 0.1A TO92-3
Power - Max: 350 mW
Voltage - Collector Emitter Breakdown (Max): 50 V
Current - Collector (Ic) (Max): 100 mA
Part Status: Obsolete
Supplier Device Package: TO-92-3
Frequency - Transition: 150MHz
DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 2mA, 5V
Current - Collector Cutoff (Max): 15nA (ICBO)
Vce Saturation (Max) @ Ib, Ic: 600mV @ 5mA, 100mA
Operating Temperature: -55°C ~ 150°C (TJ)
Transistor Type: NPN
Mounting Type: Through Hole
Package / Case: TO-226-3, TO-92-3 (TO-226AA) Formed Leads
Packaging: Bulk
Produkt ist nicht verfügbar
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BC183C_J35Z BC183C.pdf
BC183C_J35Z
Hersteller: onsemi
Description: TRANS NPN 30V 0.1A TO-92-3
Power - Max: 350 mW
Voltage - Collector Emitter Breakdown (Max): 30 V
Current - Collector (Ic) (Max): 100 mA
Supplier Device Package: TO-92-3
Frequency - Transition: 150MHz
DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 2mA, 5V
Current - Collector Cutoff (Max): 15nA (ICBO)
Vce Saturation (Max) @ Ib, Ic: 600mV @ 5mA, 100mA
Operating Temperature: -55°C ~ 150°C (TJ)
Transistor Type: NPN
Mounting Type: Through Hole
Package / Case: TO-226-3, TO-92-3 (TO-226AA) Formed Leads
Packaging: Bulk
Produkt ist nicht verfügbar
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BC183LC_J35Z BC183.pdf
BC183LC_J35Z
Hersteller: onsemi
Description: TRANS NPN 30V 0.1A TO-92-3
Transistor Type: NPN
Mounting Type: Through Hole
Package / Case: TO-226-3, TO-92-3 (TO-226AA) Formed Leads
Packaging: Bulk
Power - Max: 350 mW
Voltage - Collector Emitter Breakdown (Max): 30 V
Current - Collector (Ic) (Max): 100 mA
Supplier Device Package: TO-92-3
Frequency - Transition: 150MHz
DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 10µA, 5V
Current - Collector Cutoff (Max): 15nA (ICBO)
Vce Saturation (Max) @ Ib, Ic: 600mV @ 5mA, 100mA
Operating Temperature: -55°C ~ 150°C (TJ)
Produkt ist nicht verfügbar
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BC183_J35Z BC183.pdf
BC183_J35Z
Hersteller: onsemi
Description: TRANS NPN 30V 0.1A TO-92-3
Power - Max: 350 mW
Voltage - Collector Emitter Breakdown (Max): 30 V
Current - Collector (Ic) (Max): 100 mA
Supplier Device Package: TO-92-3
Frequency - Transition: 150MHz
DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 10µA, 5V
Current - Collector Cutoff (Max): 15nA (ICBO)
Vce Saturation (Max) @ Ib, Ic: 600mV @ 5mA, 100mA
Operating Temperature: -55°C ~ 150°C (TJ)
Transistor Type: NPN
Mounting Type: Through Hole
Package / Case: TO-226-3, TO-92-3 (TO-226AA) Formed Leads
Packaging: Bulk
Produkt ist nicht verfügbar
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BC184C_J35Z BC184C.pdf
BC184C_J35Z
Hersteller: onsemi
Description: TRANS NPN 30V 0.5A TO-92-3
Frequency - Transition: 150MHz
DC Current Gain (hFE) (Min) @ Ic, Vce: 250 @ 2mA, 5V
Current - Collector Cutoff (Max): 15nA (ICBO)
Vce Saturation (Max) @ Ib, Ic: 250mV @ 5mA, 100mA
Operating Temperature: 150°C (TJ)
Transistor Type: NPN
Mounting Type: Through Hole
Package / Case: TO-226-3, TO-92-3 (TO-226AA) Formed Leads
Packaging: Bulk
Power - Max: 350 mW
Voltage - Collector Emitter Breakdown (Max): 30 V
Current - Collector (Ic) (Max): 500 mA
Part Status: Obsolete
Supplier Device Package: TO-92-3
Produkt ist nicht verfügbar
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BC184LC_J35Z BC184LC.pdf
BC184LC_J35Z
Hersteller: onsemi
Description: TRANS NPN 30V 0.2A TO92-3
Part Status: Obsolete
Supplier Device Package: TO-92-3
Frequency - Transition: 150MHz
DC Current Gain (hFE) (Min) @ Ic, Vce: 130 @ 100mA, 5V
Current - Collector Cutoff (Max): 15nA (ICBO)
Vce Saturation (Max) @ Ib, Ic: 600mV @ 5mA, 100mA
Operating Temperature: 150°C (TJ)
Transistor Type: NPN
Mounting Type: Through Hole
Package / Case: TO-226-3, TO-92-3 (TO-226AA) Formed Leads
Packaging: Bulk
Power - Max: 625 mW
Voltage - Collector Emitter Breakdown (Max): 30 V
Current - Collector (Ic) (Max): 200 mA
Produkt ist nicht verfügbar
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BC184L_J35Z BC184L.pdf
BC184L_J35Z
Hersteller: onsemi
Description: TRANS NPN 30V 0.5A TO-92-3
Power - Max: 350 mW
Voltage - Collector Emitter Breakdown (Max): 30 V
Current - Collector (Ic) (Max): 500 mA
Part Status: Obsolete
Supplier Device Package: TO-92-3
Frequency - Transition: 150MHz
DC Current Gain (hFE) (Min) @ Ic, Vce: 130 @ 100mA, 5V
Current - Collector Cutoff (Max): 15nA (ICBO)
Vce Saturation (Max) @ Ib, Ic: 250mV @ 5mA, 100mA
Operating Temperature: 150°C (TJ)
Transistor Type: NPN
Mounting Type: Through Hole
Package / Case: TO-226-3, TO-92-3 (TO-226AA) Formed Leads
Packaging: Bulk
Produkt ist nicht verfügbar
Mindestbestellmenge: 2000 Stücke
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BC184_J35Z BC184.pdf
BC184_J35Z
Hersteller: onsemi
Description: TRANS NPN 30V 0.1A TO-92-3
Power - Max: 350 mW
Voltage - Collector Emitter Breakdown (Max): 30 V
Current - Collector (Ic) (Max): 100 mA
Part Status: Obsolete
Supplier Device Package: TO-92-3
Frequency - Transition: 150MHz
DC Current Gain (hFE) (Min) @ Ic, Vce: 130 @ 100mA, 5V
Current - Collector Cutoff (Max): 15nA (ICBO)
Vce Saturation (Max) @ Ib, Ic: 600mV @ 5mA, 100mA
Operating Temperature: -55°C ~ 150°C (TJ)
Transistor Type: NPN
Mounting Type: Through Hole
Package / Case: TO-226-3, TO-92-3 (TO-226AA) Formed Leads
Packaging: Bulk
Produkt ist nicht verfügbar
Mindestbestellmenge: 2000 Stücke
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BC212B_J35Z BC212B.pdf
BC212B_J35Z
Hersteller: onsemi
Description: TRANS PNP 50V 0.1A TO-92-3
Packaging: Bulk
Package / Case: TO-226-3, TO-92-3 (TO-226AA) Formed Leads
Mounting Type: Through Hole
Transistor Type: PNP
Operating Temperature: -55°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 600mV @ 5mA, 100mA
Current - Collector Cutoff (Max): 15nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 60 @ 2mA, 5V
Supplier Device Package: TO-92-3
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 350 mW
Produkt ist nicht verfügbar
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BC212L_J35Z BC212L.pdf
BC212L_J35Z
Hersteller: onsemi
Description: TRANS PNP 50V 0.3A TO-92-3
Packaging: Bulk
Package / Case: TO-226-3, TO-92-3 (TO-226AA) Formed Leads
Mounting Type: Through Hole
Transistor Type: PNP
Operating Temperature: -55°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 600mV @ 5mA, 100mA
Current - Collector Cutoff (Max): 15nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 60 @ 2mA, 5V
Frequency - Transition: 200MHz
Supplier Device Package: TO-92-3
Current - Collector (Ic) (Max): 300 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 625 mW
Produkt ist nicht verfügbar
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BC214LB_J35Z BC214LB.pdf
BC214LB_J35Z
Hersteller: onsemi
Description: TRANS PNP 30V 0.5A TO92-3
Power - Max: 625 mW
Voltage - Collector Emitter Breakdown (Max): 30 V
Current - Collector (Ic) (Max): 500 mA
Supplier Device Package: TO-92-3
Frequency - Transition: 200MHz
DC Current Gain (hFE) (Min) @ Ic, Vce: 140 @ 2mA, 5V
Current - Collector Cutoff (Max): 15nA (ICBO)
Vce Saturation (Max) @ Ib, Ic: 600mV @ 5mA, 100mA
Operating Temperature: -55°C ~ 150°C (TJ)
Transistor Type: PNP
Mounting Type: Through Hole
Package / Case: TO-226-3, TO-92-3 (TO-226AA) Formed Leads
Packaging: Bulk
Produkt ist nicht verfügbar
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BC214LC_J35Z BC214LC.pdf
BC214LC_J35Z
Hersteller: onsemi
Description: TRANS PNP 30V 0.5A TO92-3
Power - Max: 625 mW
Voltage - Collector Emitter Breakdown (Max): 30 V
Current - Collector (Ic) (Max): 500 mA
Supplier Device Package: TO-92-3
Frequency - Transition: 200MHz
DC Current Gain (hFE) (Min) @ Ic, Vce: 140 @ 2mA, 5V
Current - Collector Cutoff (Max): 15nA (ICBO)
Vce Saturation (Max) @ Ib, Ic: 600mV @ 5mA, 100mA
Operating Temperature: -55°C ~ 150°C (TJ)
Transistor Type: PNP
Mounting Type: Through Hole
Package / Case: TO-226-3, TO-92-3 (TO-226AA) Formed Leads
Packaging: Bulk
Produkt ist nicht verfügbar
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BC214L_J35Z BC214L.pdf
BC214L_J35Z
Hersteller: onsemi
Description: TRANS PNP 30V 0.5A TO92-3
Power - Max: 625 mW
Voltage - Collector Emitter Breakdown (Max): 30 V
Current - Collector (Ic) (Max): 500 mA
Supplier Device Package: TO-92-3
Frequency - Transition: 200MHz
DC Current Gain (hFE) (Min) @ Ic, Vce: 140 @ 2mA, 5V
Current - Collector Cutoff (Max): 15nA (ICBO)
Vce Saturation (Max) @ Ib, Ic: 600mV @ 5mA, 100mA
Operating Temperature: -55°C ~ 150°C (TJ)
Transistor Type: PNP
Mounting Type: Through Hole
Package / Case: TO-226-3, TO-92-3 (TO-226AA) Formed Leads
Packaging: Bulk
Produkt ist nicht verfügbar
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BC214_J35Z BC214.pdf
BC214_J35Z
Hersteller: onsemi
Description: TRANS PNP 30V 0.5A TO-92-3
Mounting Type: Through Hole
Package / Case: TO-226-3, TO-92-3 (TO-226AA) Formed Leads
Packaging: Bulk
Power - Max: 625 mW
Voltage - Collector Emitter Breakdown (Max): 30 V
Current - Collector (Ic) (Max): 500 mA
Supplier Device Package: TO-92-3
Frequency - Transition: 200MHz
DC Current Gain (hFE) (Min) @ Ic, Vce: 140 @ 2mA, 5V
Current - Collector Cutoff (Max): 15nA (ICBO)
Vce Saturation (Max) @ Ib, Ic: 600mV @ 5mA, 100mA
Operating Temperature: -55°C ~ 150°C (TJ)
Transistor Type: PNP
Produkt ist nicht verfügbar
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BC237A_J35Z BC23x.pdf
BC237A_J35Z
Hersteller: onsemi
Description: TRANS NPN 45V 0.1A TO92-3
Power - Max: 500 mW
Voltage - Collector Emitter Breakdown (Max): 45 V
Current - Collector (Ic) (Max): 100 mA
Part Status: Obsolete
Supplier Device Package: TO-92-3
Frequency - Transition: 250MHz
DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 2mA, 5V
Current - Collector Cutoff (Max): 15nA
Vce Saturation (Max) @ Ib, Ic: 600mV @ 5mA, 100mA
Operating Temperature: 150°C (TJ)
Transistor Type: NPN
Mounting Type: Through Hole
Package / Case: TO-226-3, TO-92-3 (TO-226AA) Formed Leads
Packaging: Bulk
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
BC237B_J35Z BC23x.pdf
BC237B_J35Z
Hersteller: onsemi
Description: TRANS NPN 45V 0.1A TO92-3
Voltage - Collector Emitter Breakdown (Max): 45 V
Current - Collector (Ic) (Max): 100 mA
Part Status: Obsolete
Supplier Device Package: TO-92-3
Frequency - Transition: 250MHz
DC Current Gain (hFE) (Min) @ Ic, Vce: 180 @ 2mA, 5V
Current - Collector Cutoff (Max): 15nA
Vce Saturation (Max) @ Ib, Ic: 600mV @ 5mA, 100mA
Operating Temperature: 150°C (TJ)
Transistor Type: NPN
Mounting Type: Through Hole
Package / Case: TO-226-3, TO-92-3 (TO-226AA) Formed Leads
Packaging: Bulk
Power - Max: 500 mW
Produkt ist nicht verfügbar
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BC237_J35Z BC23x.pdf
BC237_J35Z
Hersteller: onsemi
Description: TRANS NPN 45V 0.1A TO-92-3
Frequency - Transition: 250MHz
DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 2mA, 5V
Current - Collector Cutoff (Max): 15nA
Vce Saturation (Max) @ Ib, Ic: 600mV @ 5mA, 100mA
Operating Temperature: 150°C (TJ)
Transistor Type: NPN
Mounting Type: Through Hole
Package / Case: TO-226-3, TO-92-3 (TO-226AA) Formed Leads
Packaging: Bulk
Power - Max: 500 mW
Voltage - Collector Emitter Breakdown (Max): 45 V
Current - Collector (Ic) (Max): 100 mA
Part Status: Obsolete
Supplier Device Package: TO-92-3
Produkt ist nicht verfügbar
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BC238A_J35Z BC23x.pdf
BC238A_J35Z
Hersteller: onsemi
Description: TRANS NPN 25V 0.1A TO92-3
Packaging: Bulk
Current - Collector (Ic) (Max): 100 mA
Part Status: Obsolete
Supplier Device Package: TO-92-3
Frequency - Transition: 250MHz
DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 2mA, 5V
Current - Collector Cutoff (Max): 15nA
Vce Saturation (Max) @ Ib, Ic: 600mV @ 5mA, 100mA
Operating Temperature: 150°C (TJ)
Transistor Type: NPN
Mounting Type: Through Hole
Package / Case: TO-226-3, TO-92-3 (TO-226AA) Formed Leads
Power - Max: 500 mW
Voltage - Collector Emitter Breakdown (Max): 25 V
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
BC238_J35Z BC23x.pdf
BC238_J35Z
Hersteller: onsemi
Description: TRANS NPN 25V 0.1A TO-92-3
Power - Max: 500 mW
Voltage - Collector Emitter Breakdown (Max): 25 V
Packaging: Bulk
Current - Collector (Ic) (Max): 100 mA
Part Status: Obsolete
Supplier Device Package: TO-92-3
Frequency - Transition: 250MHz
DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 2mA, 5V
Current - Collector Cutoff (Max): 15nA
Vce Saturation (Max) @ Ib, Ic: 600mV @ 5mA, 100mA
Operating Temperature: 150°C (TJ)
Transistor Type: NPN
Mounting Type: Through Hole
Package / Case: TO-226-3, TO-92-3 (TO-226AA) Formed Leads
Produkt ist nicht verfügbar
Mindestbestellmenge: 2000 Stücke
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BC307B_J35Z BC30x.pdf
BC307B_J35Z
Hersteller: onsemi
Description: TRANS PNP 45V 0.1A TO-92-3
Power - Max: 500 mW
Voltage - Collector Emitter Breakdown (Max): 45 V
Current - Collector (Ic) (Max): 100 mA
Part Status: Obsolete
Supplier Device Package: TO-92-3
Frequency - Transition: 130MHz
DC Current Gain (hFE) (Min) @ Ic, Vce: 180 @ 2mA, 5V
Current - Collector Cutoff (Max): 15nA
Vce Saturation (Max) @ Ib, Ic: 500mV @ 5mA, 100mA
Operating Temperature: 150°C (TJ)
Transistor Type: PNP
Mounting Type: Through Hole
Package / Case: TO-226-3, TO-92-3 (TO-226AA) Formed Leads
Packaging: Bulk
Produkt ist nicht verfügbar
Mindestbestellmenge: 2000 Stücke
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BC307_J35Z BC30x.pdf
BC307_J35Z
Hersteller: onsemi
Description: TRANS PNP 45V 0.1A TO-92-3
Power - Max: 500 mW
Voltage - Collector Emitter Breakdown (Max): 45 V
Current - Collector (Ic) (Max): 100 mA
Part Status: Obsolete
Supplier Device Package: TO-92-3
Frequency - Transition: 130MHz
DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 2mA, 5V
Current - Collector Cutoff (Max): 15nA
Vce Saturation (Max) @ Ib, Ic: 500mV @ 5mA, 100mA
Operating Temperature: 150°C (TJ)
Transistor Type: PNP
Mounting Type: Through Hole
Package / Case: TO-226-3, TO-92-3 (TO-226AA) Formed Leads
Packaging: Bulk
Produkt ist nicht verfügbar
Mindestbestellmenge: 2000 Stücke
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BC308A_J35Z BC30x.pdf
BC308A_J35Z
Hersteller: onsemi
Description: TRANS PNP 25V 0.1A TO-92-3
Current - Collector (Ic) (Max): 100 mA
Part Status: Obsolete
Supplier Device Package: TO-92-3
Frequency - Transition: 130MHz
DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 2mA, 5V
Current - Collector Cutoff (Max): 15nA
Vce Saturation (Max) @ Ib, Ic: 500mV @ 5mA, 100mA
Operating Temperature: 150°C (TJ)
Power - Max: 500 mW
Voltage - Collector Emitter Breakdown (Max): 25 V
Transistor Type: PNP
Mounting Type: Through Hole
Package / Case: TO-226-3, TO-92-3 (TO-226AA) Formed Leads
Packaging: Bulk
Produkt ist nicht verfügbar
Mindestbestellmenge: 2000 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
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