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NTD3817N-35G NTD3817N-35G onsemi ntd3817n-d.pdf Description: MOSFET N-CH 16V 7.6A/34.5A IPAK
Packaging: Tube
Package / Case: TO-251-3 Stub Leads, IPak
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 7.6A (Ta), 34.5A (Tc)
Rds On (Max) @ Id, Vgs: 13.9mOhm @ 15A, 10V
Power Dissipation (Max): 1.2W (Ta), 25.9W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: IPAK
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±16V
Drain to Source Voltage (Vdss): 16 V
Gate Charge (Qg) (Max) @ Vgs: 10.5 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 702 pF @ 12 V
Produkt ist nicht verfügbar
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NTD4863NAT4G NTD4863NAT4G onsemi ntd4863n-d.pdf Description: MOSFET N-CH 25V 9.2A/49A DPAK
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 9.2A (Ta), 49A (Tc)
Rds On (Max) @ Id, Vgs: 9.3mOhm @ 30A, 10V
Power Dissipation (Max): 1.27W (Ta), 36.6W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: DPAK
Drain to Source Voltage (Vdss): 25 V
Gate Charge (Qg) (Max) @ Vgs: 13.5 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 990 pF @ 12 V
Produkt ist nicht verfügbar
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NTF2955PT1G NTF2955PT1G onsemi NTF2955,P.pdf Description: MOSFET P-CH 60V 1.7A SOT-223
Packaging: Tape & Reel (TR)
Package / Case: TO-261-4, TO-261AA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 1.7A (Ta)
Rds On (Max) @ Id, Vgs: 185mOhm @ 2.4A, 10V
Power Dissipation (Max): 1W (Ta)
Vgs(th) (Max) @ Id: 4V @ 1mA
Supplier Device Package: SOT-223 (TO-261)
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 14.3 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 492 pF @ 25 V
Produkt ist nicht verfügbar
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NTGD3133PT1G NTGD3133PT1G onsemi ntgd3133p-d.pdf Description: MOSFET 2P-CH 20V 1.6A 6TSOP
Packaging: Tape & Reel (TR)
Package / Case: SOT-23-6 Thin, TSOT-23-6
Mounting Type: Surface Mount
Configuration: 2 P-Channel (Dual)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 560mW
Drain to Source Voltage (Vdss): 20V
Current - Continuous Drain (Id) @ 25°C: 1.6A
Input Capacitance (Ciss) (Max) @ Vds: 400pF @ 10V
Rds On (Max) @ Id, Vgs: 145mOhm @ 2.2A, 4.5V
Gate Charge (Qg) (Max) @ Vgs: 5.5nC @ 4.5V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 1.4V @ 250µA
Supplier Device Package: 6-TSOP
Part Status: Obsolete
Produkt ist nicht verfügbar
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NTGD4167CT1G NTGD4167CT1G onsemi ntgd4167c-d.pdf Description: MOSFET N/P-CH 30V 2.6A 6TSOP
Packaging: Tape & Reel (TR)
Package / Case: SOT-23-6 Thin, TSOT-23-6
Mounting Type: Surface Mount
Configuration: N and P-Channel
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 900mW
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 2.6A, 1.9A
Input Capacitance (Ciss) (Max) @ Vds: 295pF @ 15V
Rds On (Max) @ Id, Vgs: 90mOhm @ 2.6A, 4.5V
Gate Charge (Qg) (Max) @ Vgs: 5.5nC @ 4.5V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 1.5V @ 250µA
Supplier Device Package: 6-TSOP
Part Status: Active
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NTGD4169FT1G NTGD4169FT1G onsemi ntgd4169f-d.pdf Description: MOSFET N-CH 30V 2.6A 6TSOP
Packaging: Tape & Reel (TR)
Package / Case: SOT-23-6 Thin, TSOT-23-6
Mounting Type: Surface Mount
Operating Temperature: -25°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 2.6A (Ta)
Rds On (Max) @ Id, Vgs: 90mOhm @ 2.6A, 4.5V
FET Feature: Schottky Diode (Isolated)
Power Dissipation (Max): 900mW (Ta)
Vgs(th) (Max) @ Id: 1.5V @ 250µA
Supplier Device Package: 6-TSOP
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
Vgs (Max): ±12V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 5.5 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 295 pF @ 15 V
Produkt ist nicht verfügbar
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NTJD4001NT2G NTJD4001NT2G onsemi ntjd4001n-d.pdf Description: MOSFET 2N-CH 30V 0.25A SC88
Packaging: Tape & Reel (TR)
Package / Case: 6-TSSOP, SC-88, SOT-363
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 272mW
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 250mA
Input Capacitance (Ciss) (Max) @ Vds: 33pF @ 5V
Rds On (Max) @ Id, Vgs: 1.5Ohm @ 10mA, 4V
Gate Charge (Qg) (Max) @ Vgs: 1.3nC @ 5V
Vgs(th) (Max) @ Id: 1.5V @ 100µA
Supplier Device Package: SC-88/SC70-6/SOT-363
Part Status: Obsolete
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NTJD5121NT1G NTJD5121NT1G onsemi ntjd5121n-d.pdf Description: MOSFET 2N-CH 60V 0.295A SC88
Packaging: Tape & Reel (TR)
Package / Case: 6-TSSOP, SC-88, SOT-363
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 250mW
Drain to Source Voltage (Vdss): 60V
Current - Continuous Drain (Id) @ 25°C: 295mA
Input Capacitance (Ciss) (Max) @ Vds: 26pF @ 20V
Rds On (Max) @ Id, Vgs: 1.6Ohm @ 500mA, 10V
Gate Charge (Qg) (Max) @ Vgs: 0.9nC @ 4.5V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: SC-88/SC70-6/SOT-363
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3000+0.087 EUR
6000+0.079 EUR
9000+0.069 EUR
15000+0.065 EUR
30000+0.062 EUR
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NTMD4184PFR2G NTMD4184PFR2G onsemi ntmd4184pf-d.pdf Description: MOSFET P-CH 30V 2.3A 8SOIC
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 2.3A (Ta)
Rds On (Max) @ Id, Vgs: 95mOhm @ 3A, 10V
FET Feature: Schottky Diode (Isolated)
Power Dissipation (Max): 770mW (Ta)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: 8-SOIC
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 4.2 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 360 pF @ 10 V
Voltage Coupled to Gate Charge (Qg) (Max) @ Vgs: 4.5
Voltage Coupled to Input Capacitance (Ciss) (Max) @ Vds: 10
Produkt ist nicht verfügbar
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NTMD4884NFR2G NTMD4884NFR2G onsemi ntmd4884nf-d.pdf Description: MOSFET N-CH 30V 3.3A 8SOIC
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 3.3A (Ta)
Rds On (Max) @ Id, Vgs: 48mOhm @ 4A, 10V
FET Feature: Schottky Diode (Isolated)
Power Dissipation (Max): 770mW (Ta)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: 8-SOIC
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 4.2 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 360 pF @ 15 V
Produkt ist nicht verfügbar
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NTMD6N04R2G NTMD6N04R2G onsemi NTMD6N04R2-D.pdf Description: MOSFET 2N-CH 40V 4.6A 8SOIC
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 1.29W
Drain to Source Voltage (Vdss): 40V
Current - Continuous Drain (Id) @ 25°C: 4.6A
Input Capacitance (Ciss) (Max) @ Vds: 900pF @ 32V
Rds On (Max) @ Id, Vgs: 34mOhm @ 5.8A, 10V
Gate Charge (Qg) (Max) @ Vgs: 30nC @ 10V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: 8-SOIC
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NTMS4177PR2G NTMS4177PR2G onsemi ntms4177p-d.pdf Description: MOSFET P-CH 30V 6.6A 8SOIC
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 6.6A (Ta)
Rds On (Max) @ Id, Vgs: 12mOhm @ 11.4A, 10V
Power Dissipation (Max): 840mW (Ta)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: 8-SOIC
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 55 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3100 pF @ 24 V
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NUD4700SNT1G NUD4700SNT1G onsemi nud4700-d.pdf Description: LIGHT PROTECT LED SHUNT 5.5V SMD
Packaging: Tape & Reel (TR)
Package / Case: DO-216AA
Voltage: 5.5V
Mounting Type: Surface Mount
Applications: LED Protection
Technology: LED Shunt
Supplier Device Package: Powermite
Part Status: Active
Number of Circuits: 1
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6000+0.37 EUR
9000+0.35 EUR
15000+0.33 EUR
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SC224DR2G SC224DR2G onsemi Description: IC OPAMP 14SOIC
Packaging: Tape & Reel (TR)
Package / Case: 14-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Supplier Device Package: 14-SOIC
Produkt ist nicht verfügbar
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SC239DR2G SC239DR2G onsemi Description: IC COMPARATOR QUAD 14-SOIC
Produkt ist nicht verfügbar
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SC239DTBR2G SC239DTBR2G onsemi Description: IC COMPARATOR QUAD 14-TSSOP
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SC258DR2G SC258DR2G onsemi Description: IC OPAMP 8SOIC
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Supplier Device Package: 8-SOIC
Produkt ist nicht verfügbar
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SC258NG SC258NG onsemi Description: IC OPAMP GP 8DIP
Packaging: Tube
Package / Case: 8-DIP (0.300", 7.62mm)
Mounting Type: Through Hole
Amplifier Type: General Purpose
Supplier Device Package: 8-PDIP
Produkt ist nicht verfügbar
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SC2901DR2G SC2901DR2G onsemi Description: IC OPAMP 14SOIC
Packaging: Tape & Reel (TR)
Package / Case: 14-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 105°C
Current - Supply: 800µA
Current - Input Bias: 25 nA
Voltage - Input Offset: 2 mV
Supplier Device Package: 14-SOIC
Produkt ist nicht verfügbar
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SC2901DTBR2G SC2901DTBR2G onsemi Description: IC OPAMP GP 14TSSOP
Packaging: Tape & Reel (TR)
Package / Case: 14-TSSOP (0.173", 4.40mm Width)
Mounting Type: Surface Mount
Amplifier Type: General Purpose
Supplier Device Package: 14-TSSOP
Produkt ist nicht verfügbar
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SC2901NG SC2901NG onsemi LM339%2C239%2C2901%28V%29%2CNCV2901%2CMC3302.pdf Description: IC COMPARATOR 4 GEN PUR 14DIP
Packaging: Tube
Package / Case: 14-DIP (0.300", 7.62mm)
Output Type: CMOS, Open-Collector, TTL
Mounting Type: Through Hole
Number of Elements: 4
Type: General Purpose
Operating Temperature: -40°C ~ 105°C
Voltage - Supply, Single/Dual (±): 3V ~ 36V, ±1.5V ~ 18V
Supplier Device Package: 14-PDIP
Current - Quiescent (Max): 2mA
Voltage - Input Offset (Max): 7mV @ 5V
Current - Input Bias (Max): 0.25µA @ 5V
Current - Output (Typ): 16mA @ 5V
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SC2901VDR2G SC2901VDR2G onsemi Description: IC OPAMP 14SOIC
Packaging: Tape & Reel (TR)
Package / Case: 14-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Supplier Device Package: 14-SOIC
Part Status: Obsolete
Produkt ist nicht verfügbar
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SC2901VDTBR2G SC2901VDTBR2G onsemi Description: IC OPAMP GP 14TSSOP
Packaging: Tape & Reel (TR)
Package / Case: 14-TSSOP (0.173", 4.40mm Width)
Mounting Type: Surface Mount
Amplifier Type: General Purpose
Supplier Device Package: 14-TSSOP
Part Status: Active
Produkt ist nicht verfügbar
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SC2901VNG SC2901VNG onsemi LM339,239,2901(V),NCV2901,MC3302.pdf Description: IC COMPARATOR 4 GEN PUR 14DIP
Packaging: Tube
Package / Case: 14-DIP (0.300", 7.62mm)
Output Type: CMOS, Open-Collector, TTL
Mounting Type: Through Hole
Number of Elements: 4
Type: General Purpose
Operating Temperature: -40°C ~ 125°C
Voltage - Supply, Single/Dual (±): 3V ~ 36V, ±1.5V ~ 18V
Supplier Device Package: 14-PDIP
Current - Quiescent (Max): 2mA
Voltage - Input Offset (Max): 7mV @ 5V
Current - Input Bias (Max): 0.25µA @ 5V
Current - Output (Typ): 16mA @ 5V
Part Status: Obsolete
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SC2902VDTBR2G SC2902VDTBR2G onsemi Description: IC OPAMP GP 14TSSOP
Packaging: Tape & Reel (TR)
Package / Case: 14-TSSOP (0.173", 4.40mm Width)
Mounting Type: Surface Mount
Amplifier Type: General Purpose
Supplier Device Package: 14-TSSOP
Produkt ist nicht verfügbar
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SC2903DG SC2903DG onsemi Description: IC OPAMP GP 8SOIC
Packaging: Tube
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Amplifier Type: General Purpose
Supplier Device Package: 8-SOIC
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SC2903DR2G SC2903DR2G onsemi Description: IC OPAMP GP 8SOIC
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Amplifier Type: General Purpose
Supplier Device Package: 8-SOIC
Produkt ist nicht verfügbar
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SC2903NG SC2903NG onsemi Description: IC OPAMP GP 14DIP
Packaging: Tube
Package / Case: 14-DIP (0.300", 7.62mm)
Mounting Type: Through Hole
Amplifier Type: General Purpose
Supplier Device Package: 14-PDIP
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SC2904DR2G SC2904DR2G onsemi Description: IC OPAMP GP 2 CIRCUIT 8SOIC
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Amplifier Type: Standard
Operating Temperature: -40°C ~ 85°C
Current - Input Bias: 45 nA
Voltage - Input Offset: 2 mV
Supplier Device Package: 8-SOIC
Part Status: Obsolete
Number of Circuits: 2
Current - Output / Channel: 40 mA
Voltage - Supply Span (Min): 3 V
Voltage - Supply Span (Max): 26 V
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SC2904NG SC2904NG onsemi Description: IC OPAMP GP 8DIP
Packaging: Tube
Package / Case: 8-DIP (0.300", 7.62mm)
Mounting Type: Through Hole
Amplifier Type: General Purpose
Supplier Device Package: 8-PDIP
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SC2904VDR2G SC2904VDR2G onsemi Description: IC OPAMP GP 2 CIRCUIT 8SOIC
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Amplifier Type: General Purpose
Operating Temperature: -40°C ~ 85°C
Current - Input Bias: 45 nA
Voltage - Input Offset: 2 mV
Supplier Device Package: 8-SOIC
Part Status: Obsolete
Number of Circuits: 2
Current - Output / Channel: 40 mA
Voltage - Supply Span (Min): 3 V
Voltage - Supply Span (Max): 26 V
Produkt ist nicht verfügbar
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SC2904VNG SC2904VNG onsemi Description: IC OPAMP GP 8DIP
Packaging: Tube
Package / Case: 8-DIP (0.300", 7.62mm)
Mounting Type: Through Hole
Amplifier Type: General Purpose
Supplier Device Package: 8-PDIP
Part Status: Obsolete
Produkt ist nicht verfügbar
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SC324DR2G SC324DR2G onsemi Description: IC OPAMP GP 14SOIC
Packaging: Tape & Reel (TR)
Package / Case: 14-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Amplifier Type: General Purpose
Supplier Device Package: 14-SOIC
Part Status: Obsolete
Produkt ist nicht verfügbar
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SC324NG SC324NG onsemi Description: IC OPAMP GP 14DIP
Packaging: Tube
Package / Case: 14-DIP (0.300", 7.62mm)
Mounting Type: Through Hole
Amplifier Type: General Purpose
Supplier Device Package: 14-PDIP
Part Status: Obsolete
Produkt ist nicht verfügbar
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SC3302DR2G SC3302DR2G onsemi Description: IC COMPARATOR QUAD DIFF 14-SOIC
Packaging: Tape & Reel (TR)
Package / Case: 14-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Supplier Device Package: 14-SOIC
Part Status: Obsolete
auf Bestellung 7500 Stücke:
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SC339DR2G SC339DR2G onsemi Description: IC COMPARATOR 14SOIC
Packaging: Tape & Reel (TR)
Package / Case: 14-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Supplier Device Package: 14-SOIC
Part Status: Obsolete
Produkt ist nicht verfügbar
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SC339NG SC339NG onsemi Description: IC COMPATATOR QUAD LO PWR 14-DIP
Packaging: Tube
Package / Case: 14-DIP (0.300", 7.62mm)
Mounting Type: Through Hole
Supplier Device Package: 14-PDIP
Part Status: Obsolete
Produkt ist nicht verfügbar
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SC358DR2G SC358DR2G onsemi Description: IC OPAMP GP 2 CIRCUIT 8SOIC
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Amplifier Type: General Purpose
Operating Temperature: 0°C ~ 70°C
Voltage - Input Offset: 2 mV
Supplier Device Package: 8-SOIC
Part Status: Obsolete
Number of Circuits: 2
Current - Output / Channel: 40 mA
Voltage - Supply Span (Min): 3 V
Voltage - Supply Span (Max): 32 V
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SC358NG SC358NG onsemi Description: IC OPAMP GP 2 CIRCUIT 8DIP
Packaging: Tube
Package / Case: 8-DIP (0.300", 7.62mm)
Mounting Type: Through Hole
Amplifier Type: General Purpose
Operating Temperature: 0°C ~ 70°C
Voltage - Input Offset: 2 mV
Supplier Device Package: 8-PDIP
Part Status: Obsolete
Number of Circuits: 2
Current - Output / Channel: 40 mA
Voltage - Supply Span (Min): 3 V
Voltage - Supply Span (Max): 32 V
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SC393DR2G SC393DR2G onsemi Description: IC COMPARATOR DUAL 8SOIC
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Supplier Device Package: 8-SOIC
Part Status: Obsolete
Produkt ist nicht verfügbar
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CAT24C256WI-G CAT24C256WI-G onsemi cat24c256-d.pdf description Description: IC EEPROM 256KBIT I2C 1MHZ 8SOIC
Packaging: Tube
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Memory Size: 256Kbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 1.8V ~ 5.5V
Technology: EEPROM
Clock Frequency: 1 MHz
Memory Format: EEPROM
Supplier Device Package: 8-SOIC
Part Status: Obsolete
Write Cycle Time - Word, Page: 5ms
Memory Interface: I2C
Access Time: 500 ns
Memory Organization: 32K x 8
DigiKey Programmable: Verified
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FDB3502 FDB3502 onsemi fdb3502-d.pdf Description: MOSFET N-CH 75V 6A/14A TO263AB
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 6A (Ta), 14A (Tc)
Rds On (Max) @ Id, Vgs: 47mOhm @ 6A, 10V
Power Dissipation (Max): 3.1W (Ta), 41W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 250µA
Supplier Device Package: TO-263 (D2Pak)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 75 V
Gate Charge (Qg) (Max) @ Vgs: 15 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 815 pF @ 40 V
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FDD5353 FDD5353 onsemi fdd5353-d.pdf Description: MOSFET N-CH 60V 11.5A/50A DPAK
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 155°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 11.5A (Ta), 50A (Tc)
Rds On (Max) @ Id, Vgs: 12.3mOhm @ 10.7A, 10V
Power Dissipation (Max): 3.1W (Ta), 69W (Tc)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: TO-252AA
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 65 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3215 pF @ 30 V
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FDMC4435BZ FDMC4435BZ onsemi fdmc4435bz-d.pdf Description: MOSFET P-CH 30V 8.5A/18A 8MLP
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerWDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 8.5A (Ta), 18A (Tc)
Rds On (Max) @ Id, Vgs: 20mOhm @ 8.5A, 10V
Power Dissipation (Max): 2.3W (Ta), 31W (Tc)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: 8-MLP (3.3x3.3)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±25V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 46 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2045 pF @ 15 V
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FDMS3662 FDMS3662 onsemi fdms3662-d.pdf Description: MOSFET N-CH 100V 8.9A/49A 8PQFN
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 8.9A (Ta), 49A (Tc)
Rds On (Max) @ Id, Vgs: 14.8mOhm @ 8.9A, 10V
Power Dissipation (Max): 2.5W (Ta), 104W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 250µA
Supplier Device Package: 8-PQFN (5x6)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 75 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4620 pF @ 50 V
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FDMS5352 FDMS5352 onsemi fdms5352-d.pdf Description: MOSFET N-CH 60V 13.6A/49A 8PQFN
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 13.6A (Ta), 49A (Tc)
Rds On (Max) @ Id, Vgs: 6.7mOhm @ 13.6A, 10V
Power Dissipation (Max): 2.5W (Ta), 104W (Tc)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: 8-PQFN (5x6)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 131 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 6940 pF @ 30 V
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FDP047N08 FDP047N08 onsemi fdp047n08-d.pdf Description: MOSFET N-CH 75V 164A TO220-3
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 164A (Tc)
Rds On (Max) @ Id, Vgs: 4.7mOhm @ 80A, 10V
Power Dissipation (Max): 268W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 250µA
Supplier Device Package: TO-220-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 75 V
Gate Charge (Qg) (Max) @ Vgs: 152 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 9415 pF @ 25 V
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FFA40UP35STU FFA40UP35STU onsemi ffa40up35s-d.pdf Description: DIODE GEN PURP 350V 40A TO3PN
Packaging: Tube
Package / Case: TO-3P-3, SC-65-3
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 55 ns
Technology: Standard
Current - Average Rectified (Io): 40A
Supplier Device Package: TO-3PN
Operating Temperature - Junction: -65°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 350 V
Voltage - Forward (Vf) (Max) @ If: 1.6 V @ 40 A
Current - Reverse Leakage @ Vr: 100 µA @ 350 V
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FGH40N60SFDTU FGH40N60SFDTU onsemi fgh40n60sfdtu-f085-d.pdf Description: IGBT FIELD STOP 600V 80A TO247
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 45 ns
Vce(on) (Max) @ Vge, Ic: 2.9V @ 15V, 40A
Supplier Device Package: TO-247-3
IGBT Type: Field Stop
Td (on/off) @ 25°C: 25ns/115ns
Switching Energy: 1.13mJ (on), 310µJ (off)
Test Condition: 400V, 40A, 10Ohm, 15V
Gate Charge: 120 nC
Part Status: Active
Current - Collector (Ic) (Max): 80 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 120 A
Power - Max: 290 W
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FGH40N60UFDTU FGH40N60UFDTU onsemi fgh40n60ufd-d.pdf Description: IGBT FIELD STOP 600V 80A TO247
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 45 ns
Vce(on) (Max) @ Vge, Ic: 2.4V @ 15V, 40A
Supplier Device Package: TO-247-3
IGBT Type: Field Stop
Td (on/off) @ 25°C: 24ns/112ns
Switching Energy: 1.19mJ (on), 460µJ (off)
Test Condition: 400V, 40A, 10Ohm, 15V
Gate Charge: 120 nC
Part Status: Active
Current - Collector (Ic) (Max): 80 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 120 A
Power - Max: 290 W
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FQH8N100C FQH8N100C onsemi fqh8n100c-d.pdf Description: MOSFET N-CH 1000V 8A TO247-3
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 8A (Tc)
Rds On (Max) @ Id, Vgs: 1.45Ohm @ 4A, 10V
Power Dissipation (Max): 225W (Tc)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: TO-247-3
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 1000 V
Gate Charge (Qg) (Max) @ Vgs: 70 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3220 pF @ 25 V
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FDB3502 FDB3502 onsemi fdb3502-d.pdf Description: MOSFET N-CH 75V 6A/14A TO263AB
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 6A (Ta), 14A (Tc)
Rds On (Max) @ Id, Vgs: 47mOhm @ 6A, 10V
Power Dissipation (Max): 3.1W (Ta), 41W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 250µA
Supplier Device Package: TO-263 (D2Pak)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 75 V
Gate Charge (Qg) (Max) @ Vgs: 15 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 815 pF @ 40 V
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FDD5353 FDD5353 onsemi fdd5353-d.pdf Description: MOSFET N-CH 60V 11.5A/50A DPAK
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 155°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 11.5A (Ta), 50A (Tc)
Rds On (Max) @ Id, Vgs: 12.3mOhm @ 10.7A, 10V
Power Dissipation (Max): 3.1W (Ta), 69W (Tc)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: TO-252AA
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 65 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3215 pF @ 30 V
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FDMC4435BZ FDMC4435BZ onsemi fdmc4435bz-d.pdf Description: MOSFET P-CH 30V 8.5A/18A 8MLP
Packaging: Cut Tape (CT)
Package / Case: 8-PowerWDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 8.5A (Ta), 18A (Tc)
Rds On (Max) @ Id, Vgs: 20mOhm @ 8.5A, 10V
Power Dissipation (Max): 2.3W (Ta), 31W (Tc)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: 8-MLP (3.3x3.3)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±25V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 46 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2045 pF @ 15 V
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FDMC8462 FDMC8462 onsemi fdmc8462-d.pdf Description: MOSFET N-CH 40V 14A/20A POWER33
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 14A (Ta), 20A (Tc)
Rds On (Max) @ Id, Vgs: 5.8mOhm @ 13.5A, 10V
Power Dissipation (Max): 2W (Ta), 41W (Tc)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: Power33
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 43 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2660 pF @ 20 V
auf Bestellung 5008 Stücke:
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FDMS3662 FDMS3662 onsemi fdms3662-d.pdf Description: MOSFET N-CH 100V 8.9A/49A 8PQFN
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 8.9A (Ta), 49A (Tc)
Rds On (Max) @ Id, Vgs: 14.8mOhm @ 8.9A, 10V
Power Dissipation (Max): 2.5W (Ta), 104W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 250µA
Supplier Device Package: 8-PQFN (5x6)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 75 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4620 pF @ 50 V
auf Bestellung 9558 Stücke:
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FDMS5352 FDMS5352 onsemi fdms5352-d.pdf Description: MOSFET N-CH 60V 13.6A/49A 8PQFN
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 13.6A (Ta), 49A (Tc)
Rds On (Max) @ Id, Vgs: 6.7mOhm @ 13.6A, 10V
Power Dissipation (Max): 2.5W (Ta), 104W (Tc)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: 8-PQFN (5x6)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 131 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 6940 pF @ 30 V
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CAT885ZI-SA-GT3 CAT885ZI-SA-GT3 onsemi design-resources?notFound=CAT885-D.PDF Description: IC SUPERVSR 5CH 2.87/1.68V 8MSOP
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CAT24C256WI-GT3 CAT24C256WI-GT3 onsemi cat24c256-d.pdf Description: IC EEPROM 256KBIT I2C 1MHZ 8SOIC
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Memory Size: 256Kbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 1.8V ~ 5.5V
Technology: EEPROM
Clock Frequency: 1 MHz
Memory Format: EEPROM
Supplier Device Package: 8-SOIC
Part Status: Active
Write Cycle Time - Word, Page: 5ms
Memory Interface: I2C
Access Time: 500 ns
Memory Organization: 32K x 8
DigiKey Programmable: Verified
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CAT24C256YI-GT3 CAT24C256YI-GT3 onsemi cat24c256-d.pdf Description: IC EEPROM 256KBIT I2C 8TSSOP
Packaging: Tape & Reel (TR)
Package / Case: 8-TSSOP (0.173", 4.40mm Width)
Mounting Type: Surface Mount
Memory Size: 256Kbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 1.8V ~ 5.5V
Technology: EEPROM
Clock Frequency: 1 MHz
Memory Format: EEPROM
Supplier Device Package: 8-TSSOP
Part Status: Active
Write Cycle Time - Word, Page: 5ms
Memory Interface: I2C
Access Time: 500 ns
Memory Organization: 32K x 8
DigiKey Programmable: Verified
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NTD3817N-35G ntd3817n-d.pdf
NTD3817N-35G
Hersteller: onsemi
Description: MOSFET N-CH 16V 7.6A/34.5A IPAK
Packaging: Tube
Package / Case: TO-251-3 Stub Leads, IPak
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 7.6A (Ta), 34.5A (Tc)
Rds On (Max) @ Id, Vgs: 13.9mOhm @ 15A, 10V
Power Dissipation (Max): 1.2W (Ta), 25.9W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: IPAK
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±16V
Drain to Source Voltage (Vdss): 16 V
Gate Charge (Qg) (Max) @ Vgs: 10.5 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 702 pF @ 12 V
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NTD4863NAT4G ntd4863n-d.pdf
NTD4863NAT4G
Hersteller: onsemi
Description: MOSFET N-CH 25V 9.2A/49A DPAK
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 9.2A (Ta), 49A (Tc)
Rds On (Max) @ Id, Vgs: 9.3mOhm @ 30A, 10V
Power Dissipation (Max): 1.27W (Ta), 36.6W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: DPAK
Drain to Source Voltage (Vdss): 25 V
Gate Charge (Qg) (Max) @ Vgs: 13.5 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 990 pF @ 12 V
Produkt ist nicht verfügbar
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NTF2955PT1G NTF2955,P.pdf
NTF2955PT1G
Hersteller: onsemi
Description: MOSFET P-CH 60V 1.7A SOT-223
Packaging: Tape & Reel (TR)
Package / Case: TO-261-4, TO-261AA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 1.7A (Ta)
Rds On (Max) @ Id, Vgs: 185mOhm @ 2.4A, 10V
Power Dissipation (Max): 1W (Ta)
Vgs(th) (Max) @ Id: 4V @ 1mA
Supplier Device Package: SOT-223 (TO-261)
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 14.3 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 492 pF @ 25 V
Produkt ist nicht verfügbar
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NTGD3133PT1G ntgd3133p-d.pdf
NTGD3133PT1G
Hersteller: onsemi
Description: MOSFET 2P-CH 20V 1.6A 6TSOP
Packaging: Tape & Reel (TR)
Package / Case: SOT-23-6 Thin, TSOT-23-6
Mounting Type: Surface Mount
Configuration: 2 P-Channel (Dual)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 560mW
Drain to Source Voltage (Vdss): 20V
Current - Continuous Drain (Id) @ 25°C: 1.6A
Input Capacitance (Ciss) (Max) @ Vds: 400pF @ 10V
Rds On (Max) @ Id, Vgs: 145mOhm @ 2.2A, 4.5V
Gate Charge (Qg) (Max) @ Vgs: 5.5nC @ 4.5V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 1.4V @ 250µA
Supplier Device Package: 6-TSOP
Part Status: Obsolete
Produkt ist nicht verfügbar
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NTGD4167CT1G ntgd4167c-d.pdf
NTGD4167CT1G
Hersteller: onsemi
Description: MOSFET N/P-CH 30V 2.6A 6TSOP
Packaging: Tape & Reel (TR)
Package / Case: SOT-23-6 Thin, TSOT-23-6
Mounting Type: Surface Mount
Configuration: N and P-Channel
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 900mW
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 2.6A, 1.9A
Input Capacitance (Ciss) (Max) @ Vds: 295pF @ 15V
Rds On (Max) @ Id, Vgs: 90mOhm @ 2.6A, 4.5V
Gate Charge (Qg) (Max) @ Vgs: 5.5nC @ 4.5V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 1.5V @ 250µA
Supplier Device Package: 6-TSOP
Part Status: Active
auf Bestellung 1157750 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
3000+0.32 EUR
Mindestbestellmenge: 3000
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NTGD4169FT1G ntgd4169f-d.pdf
NTGD4169FT1G
Hersteller: onsemi
Description: MOSFET N-CH 30V 2.6A 6TSOP
Packaging: Tape & Reel (TR)
Package / Case: SOT-23-6 Thin, TSOT-23-6
Mounting Type: Surface Mount
Operating Temperature: -25°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 2.6A (Ta)
Rds On (Max) @ Id, Vgs: 90mOhm @ 2.6A, 4.5V
FET Feature: Schottky Diode (Isolated)
Power Dissipation (Max): 900mW (Ta)
Vgs(th) (Max) @ Id: 1.5V @ 250µA
Supplier Device Package: 6-TSOP
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
Vgs (Max): ±12V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 5.5 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 295 pF @ 15 V
Produkt ist nicht verfügbar
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NTJD4001NT2G ntjd4001n-d.pdf
NTJD4001NT2G
Hersteller: onsemi
Description: MOSFET 2N-CH 30V 0.25A SC88
Packaging: Tape & Reel (TR)
Package / Case: 6-TSSOP, SC-88, SOT-363
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 272mW
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 250mA
Input Capacitance (Ciss) (Max) @ Vds: 33pF @ 5V
Rds On (Max) @ Id, Vgs: 1.5Ohm @ 10mA, 4V
Gate Charge (Qg) (Max) @ Vgs: 1.3nC @ 5V
Vgs(th) (Max) @ Id: 1.5V @ 100µA
Supplier Device Package: SC-88/SC70-6/SOT-363
Part Status: Obsolete
Produkt ist nicht verfügbar
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NTJD5121NT1G ntjd5121n-d.pdf
NTJD5121NT1G
Hersteller: onsemi
Description: MOSFET 2N-CH 60V 0.295A SC88
Packaging: Tape & Reel (TR)
Package / Case: 6-TSSOP, SC-88, SOT-363
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 250mW
Drain to Source Voltage (Vdss): 60V
Current - Continuous Drain (Id) @ 25°C: 295mA
Input Capacitance (Ciss) (Max) @ Vds: 26pF @ 20V
Rds On (Max) @ Id, Vgs: 1.6Ohm @ 500mA, 10V
Gate Charge (Qg) (Max) @ Vgs: 0.9nC @ 4.5V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: SC-88/SC70-6/SOT-363
auf Bestellung 63000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
3000+0.087 EUR
6000+0.079 EUR
9000+0.069 EUR
15000+0.065 EUR
30000+0.062 EUR
Mindestbestellmenge: 3000
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NTMD4184PFR2G ntmd4184pf-d.pdf
NTMD4184PFR2G
Hersteller: onsemi
Description: MOSFET P-CH 30V 2.3A 8SOIC
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 2.3A (Ta)
Rds On (Max) @ Id, Vgs: 95mOhm @ 3A, 10V
FET Feature: Schottky Diode (Isolated)
Power Dissipation (Max): 770mW (Ta)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: 8-SOIC
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 4.2 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 360 pF @ 10 V
Voltage Coupled to Gate Charge (Qg) (Max) @ Vgs: 4.5
Voltage Coupled to Input Capacitance (Ciss) (Max) @ Vds: 10
Produkt ist nicht verfügbar
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NTMD4884NFR2G ntmd4884nf-d.pdf
NTMD4884NFR2G
Hersteller: onsemi
Description: MOSFET N-CH 30V 3.3A 8SOIC
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 3.3A (Ta)
Rds On (Max) @ Id, Vgs: 48mOhm @ 4A, 10V
FET Feature: Schottky Diode (Isolated)
Power Dissipation (Max): 770mW (Ta)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: 8-SOIC
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 4.2 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 360 pF @ 15 V
Produkt ist nicht verfügbar
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NTMD6N04R2G NTMD6N04R2-D.pdf
NTMD6N04R2G
Hersteller: onsemi
Description: MOSFET 2N-CH 40V 4.6A 8SOIC
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 1.29W
Drain to Source Voltage (Vdss): 40V
Current - Continuous Drain (Id) @ 25°C: 4.6A
Input Capacitance (Ciss) (Max) @ Vds: 900pF @ 32V
Rds On (Max) @ Id, Vgs: 34mOhm @ 5.8A, 10V
Gate Charge (Qg) (Max) @ Vgs: 30nC @ 10V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: 8-SOIC
Produkt ist nicht verfügbar
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NTMS4177PR2G ntms4177p-d.pdf
NTMS4177PR2G
Hersteller: onsemi
Description: MOSFET P-CH 30V 6.6A 8SOIC
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 6.6A (Ta)
Rds On (Max) @ Id, Vgs: 12mOhm @ 11.4A, 10V
Power Dissipation (Max): 840mW (Ta)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: 8-SOIC
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 55 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3100 pF @ 24 V
auf Bestellung 2500 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
2500+0.64 EUR
Mindestbestellmenge: 2500
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NUD4700SNT1G nud4700-d.pdf
NUD4700SNT1G
Hersteller: onsemi
Description: LIGHT PROTECT LED SHUNT 5.5V SMD
Packaging: Tape & Reel (TR)
Package / Case: DO-216AA
Voltage: 5.5V
Mounting Type: Surface Mount
Applications: LED Protection
Technology: LED Shunt
Supplier Device Package: Powermite
Part Status: Active
Number of Circuits: 1
auf Bestellung 57000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
3000+0.4 EUR
6000+0.37 EUR
9000+0.35 EUR
15000+0.33 EUR
Mindestbestellmenge: 3000
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SC224DR2G
SC224DR2G
Hersteller: onsemi
Description: IC OPAMP 14SOIC
Packaging: Tape & Reel (TR)
Package / Case: 14-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Supplier Device Package: 14-SOIC
Produkt ist nicht verfügbar
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SC239DR2G
SC239DR2G
Hersteller: onsemi
Description: IC COMPARATOR QUAD 14-SOIC
Produkt ist nicht verfügbar
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SC239DTBR2G
SC239DTBR2G
Hersteller: onsemi
Description: IC COMPARATOR QUAD 14-TSSOP
Produkt ist nicht verfügbar
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SC258DR2G
SC258DR2G
Hersteller: onsemi
Description: IC OPAMP 8SOIC
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Supplier Device Package: 8-SOIC
Produkt ist nicht verfügbar
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SC258NG
SC258NG
Hersteller: onsemi
Description: IC OPAMP GP 8DIP
Packaging: Tube
Package / Case: 8-DIP (0.300", 7.62mm)
Mounting Type: Through Hole
Amplifier Type: General Purpose
Supplier Device Package: 8-PDIP
Produkt ist nicht verfügbar
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SC2901DR2G
SC2901DR2G
Hersteller: onsemi
Description: IC OPAMP 14SOIC
Packaging: Tape & Reel (TR)
Package / Case: 14-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 105°C
Current - Supply: 800µA
Current - Input Bias: 25 nA
Voltage - Input Offset: 2 mV
Supplier Device Package: 14-SOIC
Produkt ist nicht verfügbar
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SC2901DTBR2G
SC2901DTBR2G
Hersteller: onsemi
Description: IC OPAMP GP 14TSSOP
Packaging: Tape & Reel (TR)
Package / Case: 14-TSSOP (0.173", 4.40mm Width)
Mounting Type: Surface Mount
Amplifier Type: General Purpose
Supplier Device Package: 14-TSSOP
Produkt ist nicht verfügbar
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SC2901NG LM339%2C239%2C2901%28V%29%2CNCV2901%2CMC3302.pdf
SC2901NG
Hersteller: onsemi
Description: IC COMPARATOR 4 GEN PUR 14DIP
Packaging: Tube
Package / Case: 14-DIP (0.300", 7.62mm)
Output Type: CMOS, Open-Collector, TTL
Mounting Type: Through Hole
Number of Elements: 4
Type: General Purpose
Operating Temperature: -40°C ~ 105°C
Voltage - Supply, Single/Dual (±): 3V ~ 36V, ±1.5V ~ 18V
Supplier Device Package: 14-PDIP
Current - Quiescent (Max): 2mA
Voltage - Input Offset (Max): 7mV @ 5V
Current - Input Bias (Max): 0.25µA @ 5V
Current - Output (Typ): 16mA @ 5V
Produkt ist nicht verfügbar
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SC2901VDR2G
SC2901VDR2G
Hersteller: onsemi
Description: IC OPAMP 14SOIC
Packaging: Tape & Reel (TR)
Package / Case: 14-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Supplier Device Package: 14-SOIC
Part Status: Obsolete
Produkt ist nicht verfügbar
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SC2901VDTBR2G
SC2901VDTBR2G
Hersteller: onsemi
Description: IC OPAMP GP 14TSSOP
Packaging: Tape & Reel (TR)
Package / Case: 14-TSSOP (0.173", 4.40mm Width)
Mounting Type: Surface Mount
Amplifier Type: General Purpose
Supplier Device Package: 14-TSSOP
Part Status: Active
Produkt ist nicht verfügbar
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SC2901VNG LM339,239,2901(V),NCV2901,MC3302.pdf
SC2901VNG
Hersteller: onsemi
Description: IC COMPARATOR 4 GEN PUR 14DIP
Packaging: Tube
Package / Case: 14-DIP (0.300", 7.62mm)
Output Type: CMOS, Open-Collector, TTL
Mounting Type: Through Hole
Number of Elements: 4
Type: General Purpose
Operating Temperature: -40°C ~ 125°C
Voltage - Supply, Single/Dual (±): 3V ~ 36V, ±1.5V ~ 18V
Supplier Device Package: 14-PDIP
Current - Quiescent (Max): 2mA
Voltage - Input Offset (Max): 7mV @ 5V
Current - Input Bias (Max): 0.25µA @ 5V
Current - Output (Typ): 16mA @ 5V
Part Status: Obsolete
Produkt ist nicht verfügbar
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SC2902VDTBR2G
SC2902VDTBR2G
Hersteller: onsemi
Description: IC OPAMP GP 14TSSOP
Packaging: Tape & Reel (TR)
Package / Case: 14-TSSOP (0.173", 4.40mm Width)
Mounting Type: Surface Mount
Amplifier Type: General Purpose
Supplier Device Package: 14-TSSOP
Produkt ist nicht verfügbar
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SC2903DG
SC2903DG
Hersteller: onsemi
Description: IC OPAMP GP 8SOIC
Packaging: Tube
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Amplifier Type: General Purpose
Supplier Device Package: 8-SOIC
Produkt ist nicht verfügbar
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SC2903DR2G
SC2903DR2G
Hersteller: onsemi
Description: IC OPAMP GP 8SOIC
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Amplifier Type: General Purpose
Supplier Device Package: 8-SOIC
Produkt ist nicht verfügbar
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SC2903NG
SC2903NG
Hersteller: onsemi
Description: IC OPAMP GP 14DIP
Packaging: Tube
Package / Case: 14-DIP (0.300", 7.62mm)
Mounting Type: Through Hole
Amplifier Type: General Purpose
Supplier Device Package: 14-PDIP
Produkt ist nicht verfügbar
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SC2904DR2G
SC2904DR2G
Hersteller: onsemi
Description: IC OPAMP GP 2 CIRCUIT 8SOIC
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Amplifier Type: Standard
Operating Temperature: -40°C ~ 85°C
Current - Input Bias: 45 nA
Voltage - Input Offset: 2 mV
Supplier Device Package: 8-SOIC
Part Status: Obsolete
Number of Circuits: 2
Current - Output / Channel: 40 mA
Voltage - Supply Span (Min): 3 V
Voltage - Supply Span (Max): 26 V
Produkt ist nicht verfügbar
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SC2904NG
SC2904NG
Hersteller: onsemi
Description: IC OPAMP GP 8DIP
Packaging: Tube
Package / Case: 8-DIP (0.300", 7.62mm)
Mounting Type: Through Hole
Amplifier Type: General Purpose
Supplier Device Package: 8-PDIP
Produkt ist nicht verfügbar
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SC2904VDR2G
SC2904VDR2G
Hersteller: onsemi
Description: IC OPAMP GP 2 CIRCUIT 8SOIC
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Amplifier Type: General Purpose
Operating Temperature: -40°C ~ 85°C
Current - Input Bias: 45 nA
Voltage - Input Offset: 2 mV
Supplier Device Package: 8-SOIC
Part Status: Obsolete
Number of Circuits: 2
Current - Output / Channel: 40 mA
Voltage - Supply Span (Min): 3 V
Voltage - Supply Span (Max): 26 V
Produkt ist nicht verfügbar
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SC2904VNG
SC2904VNG
Hersteller: onsemi
Description: IC OPAMP GP 8DIP
Packaging: Tube
Package / Case: 8-DIP (0.300", 7.62mm)
Mounting Type: Through Hole
Amplifier Type: General Purpose
Supplier Device Package: 8-PDIP
Part Status: Obsolete
Produkt ist nicht verfügbar
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SC324DR2G
SC324DR2G
Hersteller: onsemi
Description: IC OPAMP GP 14SOIC
Packaging: Tape & Reel (TR)
Package / Case: 14-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Amplifier Type: General Purpose
Supplier Device Package: 14-SOIC
Part Status: Obsolete
Produkt ist nicht verfügbar
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SC324NG
SC324NG
Hersteller: onsemi
Description: IC OPAMP GP 14DIP
Packaging: Tube
Package / Case: 14-DIP (0.300", 7.62mm)
Mounting Type: Through Hole
Amplifier Type: General Purpose
Supplier Device Package: 14-PDIP
Part Status: Obsolete
Produkt ist nicht verfügbar
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SC3302DR2G
SC3302DR2G
Hersteller: onsemi
Description: IC COMPARATOR QUAD DIFF 14-SOIC
Packaging: Tape & Reel (TR)
Package / Case: 14-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Supplier Device Package: 14-SOIC
Part Status: Obsolete
auf Bestellung 7500 Stücke:
Lieferzeit 10-14 Tag (e)
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SC339DR2G
SC339DR2G
Hersteller: onsemi
Description: IC COMPARATOR 14SOIC
Packaging: Tape & Reel (TR)
Package / Case: 14-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Supplier Device Package: 14-SOIC
Part Status: Obsolete
Produkt ist nicht verfügbar
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SC339NG
SC339NG
Hersteller: onsemi
Description: IC COMPATATOR QUAD LO PWR 14-DIP
Packaging: Tube
Package / Case: 14-DIP (0.300", 7.62mm)
Mounting Type: Through Hole
Supplier Device Package: 14-PDIP
Part Status: Obsolete
Produkt ist nicht verfügbar
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SC358DR2G
SC358DR2G
Hersteller: onsemi
Description: IC OPAMP GP 2 CIRCUIT 8SOIC
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Amplifier Type: General Purpose
Operating Temperature: 0°C ~ 70°C
Voltage - Input Offset: 2 mV
Supplier Device Package: 8-SOIC
Part Status: Obsolete
Number of Circuits: 2
Current - Output / Channel: 40 mA
Voltage - Supply Span (Min): 3 V
Voltage - Supply Span (Max): 32 V
Produkt ist nicht verfügbar
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SC358NG
SC358NG
Hersteller: onsemi
Description: IC OPAMP GP 2 CIRCUIT 8DIP
Packaging: Tube
Package / Case: 8-DIP (0.300", 7.62mm)
Mounting Type: Through Hole
Amplifier Type: General Purpose
Operating Temperature: 0°C ~ 70°C
Voltage - Input Offset: 2 mV
Supplier Device Package: 8-PDIP
Part Status: Obsolete
Number of Circuits: 2
Current - Output / Channel: 40 mA
Voltage - Supply Span (Min): 3 V
Voltage - Supply Span (Max): 32 V
Produkt ist nicht verfügbar
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SC393DR2G
SC393DR2G
Hersteller: onsemi
Description: IC COMPARATOR DUAL 8SOIC
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Supplier Device Package: 8-SOIC
Part Status: Obsolete
Produkt ist nicht verfügbar
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CAT24C256WI-G description cat24c256-d.pdf
CAT24C256WI-G
Hersteller: onsemi
Description: IC EEPROM 256KBIT I2C 1MHZ 8SOIC
Packaging: Tube
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Memory Size: 256Kbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 1.8V ~ 5.5V
Technology: EEPROM
Clock Frequency: 1 MHz
Memory Format: EEPROM
Supplier Device Package: 8-SOIC
Part Status: Obsolete
Write Cycle Time - Word, Page: 5ms
Memory Interface: I2C
Access Time: 500 ns
Memory Organization: 32K x 8
DigiKey Programmable: Verified
Produkt ist nicht verfügbar
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FDB3502 fdb3502-d.pdf
FDB3502
Hersteller: onsemi
Description: MOSFET N-CH 75V 6A/14A TO263AB
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 6A (Ta), 14A (Tc)
Rds On (Max) @ Id, Vgs: 47mOhm @ 6A, 10V
Power Dissipation (Max): 3.1W (Ta), 41W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 250µA
Supplier Device Package: TO-263 (D2Pak)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 75 V
Gate Charge (Qg) (Max) @ Vgs: 15 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 815 pF @ 40 V
Produkt ist nicht verfügbar
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FDD5353 fdd5353-d.pdf
FDD5353
Hersteller: onsemi
Description: MOSFET N-CH 60V 11.5A/50A DPAK
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 155°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 11.5A (Ta), 50A (Tc)
Rds On (Max) @ Id, Vgs: 12.3mOhm @ 10.7A, 10V
Power Dissipation (Max): 3.1W (Ta), 69W (Tc)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: TO-252AA
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 65 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3215 pF @ 30 V
auf Bestellung 7500 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
2500+0.94 EUR
5000+0.91 EUR
Mindestbestellmenge: 2500
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FDMC4435BZ fdmc4435bz-d.pdf
FDMC4435BZ
Hersteller: onsemi
Description: MOSFET P-CH 30V 8.5A/18A 8MLP
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerWDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 8.5A (Ta), 18A (Tc)
Rds On (Max) @ Id, Vgs: 20mOhm @ 8.5A, 10V
Power Dissipation (Max): 2.3W (Ta), 31W (Tc)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: 8-MLP (3.3x3.3)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±25V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 46 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2045 pF @ 15 V
auf Bestellung 24000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
3000+0.7 EUR
6000+0.66 EUR
9000+0.64 EUR
Mindestbestellmenge: 3000
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FDMS3662 fdms3662-d.pdf
FDMS3662
Hersteller: onsemi
Description: MOSFET N-CH 100V 8.9A/49A 8PQFN
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 8.9A (Ta), 49A (Tc)
Rds On (Max) @ Id, Vgs: 14.8mOhm @ 8.9A, 10V
Power Dissipation (Max): 2.5W (Ta), 104W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 250µA
Supplier Device Package: 8-PQFN (5x6)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 75 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4620 pF @ 50 V
auf Bestellung 9000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
3000+1.95 EUR
Mindestbestellmenge: 3000
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FDMS5352 fdms5352-d.pdf
FDMS5352
Hersteller: onsemi
Description: MOSFET N-CH 60V 13.6A/49A 8PQFN
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 13.6A (Ta), 49A (Tc)
Rds On (Max) @ Id, Vgs: 6.7mOhm @ 13.6A, 10V
Power Dissipation (Max): 2.5W (Ta), 104W (Tc)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: 8-PQFN (5x6)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 131 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 6940 pF @ 30 V
auf Bestellung 3000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
3000+2.12 EUR
Mindestbestellmenge: 3000
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FDP047N08 fdp047n08-d.pdf
FDP047N08
Hersteller: onsemi
Description: MOSFET N-CH 75V 164A TO220-3
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 164A (Tc)
Rds On (Max) @ Id, Vgs: 4.7mOhm @ 80A, 10V
Power Dissipation (Max): 268W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 250µA
Supplier Device Package: TO-220-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 75 V
Gate Charge (Qg) (Max) @ Vgs: 152 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 9415 pF @ 25 V
auf Bestellung 32191 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
4+5.6 EUR
50+3.35 EUR
100+3.08 EUR
500+2.7 EUR
1000+2.56 EUR
Mindestbestellmenge: 4
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FFA40UP35STU ffa40up35s-d.pdf
FFA40UP35STU
Hersteller: onsemi
Description: DIODE GEN PURP 350V 40A TO3PN
Packaging: Tube
Package / Case: TO-3P-3, SC-65-3
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 55 ns
Technology: Standard
Current - Average Rectified (Io): 40A
Supplier Device Package: TO-3PN
Operating Temperature - Junction: -65°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 350 V
Voltage - Forward (Vf) (Max) @ If: 1.6 V @ 40 A
Current - Reverse Leakage @ Vr: 100 µA @ 350 V
Produkt ist nicht verfügbar
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FGH40N60SFDTU fgh40n60sfdtu-f085-d.pdf
FGH40N60SFDTU
Hersteller: onsemi
Description: IGBT FIELD STOP 600V 80A TO247
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 45 ns
Vce(on) (Max) @ Vge, Ic: 2.9V @ 15V, 40A
Supplier Device Package: TO-247-3
IGBT Type: Field Stop
Td (on/off) @ 25°C: 25ns/115ns
Switching Energy: 1.13mJ (on), 310µJ (off)
Test Condition: 400V, 40A, 10Ohm, 15V
Gate Charge: 120 nC
Part Status: Active
Current - Collector (Ic) (Max): 80 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 120 A
Power - Max: 290 W
auf Bestellung 516 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
3+7.53 EUR
30+4.22 EUR
120+3.49 EUR
510+2.95 EUR
Mindestbestellmenge: 3
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FGH40N60UFDTU fgh40n60ufd-d.pdf
FGH40N60UFDTU
Hersteller: onsemi
Description: IGBT FIELD STOP 600V 80A TO247
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 45 ns
Vce(on) (Max) @ Vge, Ic: 2.4V @ 15V, 40A
Supplier Device Package: TO-247-3
IGBT Type: Field Stop
Td (on/off) @ 25°C: 24ns/112ns
Switching Energy: 1.19mJ (on), 460µJ (off)
Test Condition: 400V, 40A, 10Ohm, 15V
Gate Charge: 120 nC
Part Status: Active
Current - Collector (Ic) (Max): 80 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 120 A
Power - Max: 290 W
Produkt ist nicht verfügbar
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FQH8N100C fqh8n100c-d.pdf
FQH8N100C
Hersteller: onsemi
Description: MOSFET N-CH 1000V 8A TO247-3
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 8A (Tc)
Rds On (Max) @ Id, Vgs: 1.45Ohm @ 4A, 10V
Power Dissipation (Max): 225W (Tc)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: TO-247-3
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 1000 V
Gate Charge (Qg) (Max) @ Vgs: 70 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3220 pF @ 25 V
auf Bestellung 35473 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
3+8.73 EUR
30+5.28 EUR
120+4.4 EUR
510+3.89 EUR
1020+3.7 EUR
Mindestbestellmenge: 3
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FDB3502 fdb3502-d.pdf
FDB3502
Hersteller: onsemi
Description: MOSFET N-CH 75V 6A/14A TO263AB
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 6A (Ta), 14A (Tc)
Rds On (Max) @ Id, Vgs: 47mOhm @ 6A, 10V
Power Dissipation (Max): 3.1W (Ta), 41W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 250µA
Supplier Device Package: TO-263 (D2Pak)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 75 V
Gate Charge (Qg) (Max) @ Vgs: 15 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 815 pF @ 40 V
auf Bestellung 519 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
5+3.71 EUR
10+2.38 EUR
100+1.63 EUR
Mindestbestellmenge: 5
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FDD5353 fdd5353-d.pdf
FDD5353
Hersteller: onsemi
Description: MOSFET N-CH 60V 11.5A/50A DPAK
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 155°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 11.5A (Ta), 50A (Tc)
Rds On (Max) @ Id, Vgs: 12.3mOhm @ 10.7A, 10V
Power Dissipation (Max): 3.1W (Ta), 69W (Tc)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: TO-252AA
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 65 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3215 pF @ 30 V
auf Bestellung 9099 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
7+2.64 EUR
10+2 EUR
100+1.4 EUR
500+1.12 EUR
1000+1.07 EUR
Mindestbestellmenge: 7
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FDMC4435BZ fdmc4435bz-d.pdf
FDMC4435BZ
Hersteller: onsemi
Description: MOSFET P-CH 30V 8.5A/18A 8MLP
Packaging: Cut Tape (CT)
Package / Case: 8-PowerWDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 8.5A (Ta), 18A (Tc)
Rds On (Max) @ Id, Vgs: 20mOhm @ 8.5A, 10V
Power Dissipation (Max): 2.3W (Ta), 31W (Tc)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: 8-MLP (3.3x3.3)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±25V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 46 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2045 pF @ 15 V
auf Bestellung 26227 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
7+2.64 EUR
12+1.47 EUR
100+1.04 EUR
500+0.84 EUR
1000+0.78 EUR
Mindestbestellmenge: 7
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FDMC8462 fdmc8462-d.pdf
FDMC8462
Hersteller: onsemi
Description: MOSFET N-CH 40V 14A/20A POWER33
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 14A (Ta), 20A (Tc)
Rds On (Max) @ Id, Vgs: 5.8mOhm @ 13.5A, 10V
Power Dissipation (Max): 2W (Ta), 41W (Tc)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: Power33
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 43 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2660 pF @ 20 V
auf Bestellung 5008 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
5+4.17 EUR
10+3.08 EUR
100+2.16 EUR
500+1.84 EUR
Mindestbestellmenge: 5
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FDMS3662 fdms3662-d.pdf
FDMS3662
Hersteller: onsemi
Description: MOSFET N-CH 100V 8.9A/49A 8PQFN
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 8.9A (Ta), 49A (Tc)
Rds On (Max) @ Id, Vgs: 14.8mOhm @ 8.9A, 10V
Power Dissipation (Max): 2.5W (Ta), 104W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 250µA
Supplier Device Package: 8-PQFN (5x6)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 75 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4620 pF @ 50 V
auf Bestellung 9558 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
5+4.36 EUR
10+3.39 EUR
100+2.48 EUR
500+2.39 EUR
Mindestbestellmenge: 5
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FDMS5352 fdms5352-d.pdf
FDMS5352
Hersteller: onsemi
Description: MOSFET N-CH 60V 13.6A/49A 8PQFN
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 13.6A (Ta), 49A (Tc)
Rds On (Max) @ Id, Vgs: 6.7mOhm @ 13.6A, 10V
Power Dissipation (Max): 2.5W (Ta), 104W (Tc)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: 8-PQFN (5x6)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 131 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 6940 pF @ 30 V
auf Bestellung 3811 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
4+4.63 EUR
10+3.48 EUR
100+2.65 EUR
500+2.31 EUR
1000+2.15 EUR
Mindestbestellmenge: 4
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CAT885ZI-SA-GT3 design-resources?notFound=CAT885-D.PDF
CAT885ZI-SA-GT3
Hersteller: onsemi
Description: IC SUPERVSR 5CH 2.87/1.68V 8MSOP
Produkt ist nicht verfügbar
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CAT24C256WI-GT3 cat24c256-d.pdf
CAT24C256WI-GT3
Hersteller: onsemi
Description: IC EEPROM 256KBIT I2C 1MHZ 8SOIC
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Memory Size: 256Kbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 1.8V ~ 5.5V
Technology: EEPROM
Clock Frequency: 1 MHz
Memory Format: EEPROM
Supplier Device Package: 8-SOIC
Part Status: Active
Write Cycle Time - Word, Page: 5ms
Memory Interface: I2C
Access Time: 500 ns
Memory Organization: 32K x 8
DigiKey Programmable: Verified
auf Bestellung 30000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
3000+0.62 EUR
6000+0.61 EUR
9000+0.6 EUR
15000+0.59 EUR
21000+0.58 EUR
Mindestbestellmenge: 3000
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CAT24C256YI-GT3 cat24c256-d.pdf
CAT24C256YI-GT3
Hersteller: onsemi
Description: IC EEPROM 256KBIT I2C 8TSSOP
Packaging: Tape & Reel (TR)
Package / Case: 8-TSSOP (0.173", 4.40mm Width)
Mounting Type: Surface Mount
Memory Size: 256Kbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 1.8V ~ 5.5V
Technology: EEPROM
Clock Frequency: 1 MHz
Memory Format: EEPROM
Supplier Device Package: 8-TSSOP
Part Status: Active
Write Cycle Time - Word, Page: 5ms
Memory Interface: I2C
Access Time: 500 ns
Memory Organization: 32K x 8
DigiKey Programmable: Verified
auf Bestellung 41000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
3000+0.56 EUR
6000+0.55 EUR
9000+0.54 EUR
15000+0.53 EUR
Mindestbestellmenge: 3000
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