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CNY174SR2VM CNY174SR2VM onsemi cny17f4m-d.pdf Description: OPTOISO 4.17KV TRANS W/BASE 6SMD
Current - DC Forward (If) (Max): 60 mA
Number of Channels: 1
Part Status: Active
Rise / Fall Time (Typ): 4µs, 3.5µs (Max)
Turn On / Turn Off Time (Typ): 2µs, 3µs
Voltage - Output (Max): 70V
Supplier Device Package: 6-SMD
Current Transfer Ratio (Max): 320% @ 10mA
Vce Saturation (Max): 400mV
Current Transfer Ratio (Min): 160% @ 10mA
Voltage - Isolation: 4170Vrms
Current - Output / Channel: 50mA
Input Type: DC
Voltage - Forward (Vf) (Typ): 1.35V
Operating Temperature: -40°C ~ 100°C
Mounting Type: Surface Mount
Output Type: Transistor with Base
Package / Case: 6-SMD, Gull Wing
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar
 Mindestbestellmenge: 1000 Stücke
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CNY174SVM CNY174SVM onsemi cny17f4m-d.pdf Description: OPTOISO 4.17KV TRANS W/BASE 6SMD
Current - DC Forward (If) (Max): 60 mA
Number of Channels: 1
Part Status: Active
Rise / Fall Time (Typ): 4µs, 3.5µs (Max)
Turn On / Turn Off Time (Typ): 2µs, 3µs
Voltage - Output (Max): 70V
Supplier Device Package: 6-SMD
Current Transfer Ratio (Max): 320% @ 10mA
Vce Saturation (Max): 400mV
Current Transfer Ratio (Min): 160% @ 10mA
Voltage - Isolation: 4170Vrms
Current - Output / Channel: 50mA
Input Type: DC
Voltage - Forward (Vf) (Typ): 1.35V
Operating Temperature: -40°C ~ 100°C
Mounting Type: Surface Mount
Output Type: Transistor with Base
Package / Case: 6-SMD, Gull Wing
Packaging: Bulk
Produkt ist nicht verfügbar
 Mindestbestellmenge: 1000 Stücke
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CNY174TM CNY174TM onsemi cny17f4m-d.pdf Description: OPTOISO 4.17KV TRANS W/BASE 6DIP
Part Status: Obsolete
Rise / Fall Time (Typ): 4µs, 3.5µs (Max)
Turn On / Turn Off Time (Typ): 2µs, 3µs
Voltage - Output (Max): 70V
Supplier Device Package: 6-DIP
Current Transfer Ratio (Max): 320% @ 10mA
Vce Saturation (Max): 400mV
Current Transfer Ratio (Min): 160% @ 10mA
Voltage - Isolation: 4170Vrms
Current - Output / Channel: 50mA
Input Type: DC
Voltage - Forward (Vf) (Typ): 1.35V
Operating Temperature: -40°C ~ 100°C
Mounting Type: Through Hole
Output Type: Transistor with Base
Package / Case: 6-DIP (0.400", 10.16mm)
Packaging: Bulk
Current - DC Forward (If) (Max): 60 mA
Number of Channels: 1
Produkt ist nicht verfügbar
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CNY17F1SR2VM CNY17F1SR2VM onsemi cny17f4m-d.pdf Description: OPTOISO 4.17KV TRANS 6SMD
Current - DC Forward (If) (Max): 60 mA
Number of Channels: 1
Part Status: Active
Rise / Fall Time (Typ): 4µs, 3.5µs (Max)
Turn On / Turn Off Time (Typ): 2µs, 3µs
Voltage - Output (Max): 70V
Supplier Device Package: 6-SMD
Current Transfer Ratio (Max): 80% @ 10mA
Vce Saturation (Max): 400mV
Current Transfer Ratio (Min): 40% @ 10mA
Voltage - Isolation: 4170Vrms
Current - Output / Channel: 50mA
Input Type: DC
Voltage - Forward (Vf) (Typ): 1.35V
Operating Temperature: -40°C ~ 100°C
Mounting Type: Surface Mount
Output Type: Transistor
Package / Case: 6-SMD, Gull Wing
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar
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CNY17F1SVM CNY17F1SVM onsemi cny17f4m-d.pdf Description: OPTOISO 4.17KV TRANS 6SMD
Current Transfer Ratio (Min): 40% @ 10mA
Voltage - Isolation: 4170Vrms
Current - Output / Channel: 50mA
Input Type: DC
Voltage - Forward (Vf) (Typ): 1.35V
Operating Temperature: -40°C ~ 100°C
Mounting Type: Surface Mount
Output Type: Transistor
Package / Case: 6-SMD, Gull Wing
Packaging: Bulk
Current - DC Forward (If) (Max): 60 mA
Number of Channels: 1
Rise / Fall Time (Typ): 4µs, 3.5µs (Max)
Turn On / Turn Off Time (Typ): 2µs, 3µs
Voltage - Output (Max): 70V
Supplier Device Package: 6-SMD
Current Transfer Ratio (Max): 80% @ 10mA
Vce Saturation (Max): 400mV
Produkt ist nicht verfügbar
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CNY17F1TM CNY17F1TM onsemi cny17f4m-d.pdf Description: OPTOISO 4.17KV TRANS 6DIP
Rise / Fall Time (Typ): 4µs, 3.5µs (Max)
Turn On / Turn Off Time (Typ): 2µs, 3µs
Voltage - Output (Max): 70V
Supplier Device Package: 6-DIP
Current Transfer Ratio (Max): 80% @ 10mA
Vce Saturation (Max): 400mV
Current Transfer Ratio (Min): 40% @ 10mA
Voltage - Isolation: 4170Vrms
Current - Output / Channel: 50mA
Input Type: DC
Voltage - Forward (Vf) (Typ): 1.35V
Operating Temperature: -40°C ~ 100°C
Mounting Type: Through Hole
Output Type: Transistor
Package / Case: 6-DIP (0.400", 10.16mm)
Packaging: Bulk
Current - DC Forward (If) (Max): 60 mA
Number of Channels: 1
Part Status: Obsolete
Produkt ist nicht verfügbar
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CNY17F2SM CNY17F2SM onsemi cny17f4m-d.pdf Description: OPTOISO 4.17KV 1CH TRANS 6-SMD
Packaging: Tube
Package / Case: 6-SMD, Gull Wing
Output Type: Transistor
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 100°C
Voltage - Forward (Vf) (Typ): 1.35V
Input Type: DC
Current - Output / Channel: 50mA
Voltage - Isolation: 4170Vrms
Current Transfer Ratio (Min): 63% @ 10mA
Vce Saturation (Max): 400mV
Current Transfer Ratio (Max): 125% @ 10mA
Supplier Device Package: 6-SMD
Voltage - Output (Max): 70V
Turn On / Turn Off Time (Typ): 2µs, 3µs
Rise / Fall Time (Typ): 4µs, 3.5µs (Max)
Part Status: Active
Number of Channels: 1
Current - DC Forward (If) (Max): 60 mA
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50+0.68 EUR
100+0.62 EUR
500+0.51 EUR
1000+0.48 EUR
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CNY17F2SR2M_F132 CNY17F2SR2M_F132 onsemi cny17f4m-d.pdf Description: OPTOISO 4.17KV 1CH TRANS 6-SMD
Current - DC Forward (If) (Max): 60 mA
Number of Channels: 1
Part Status: Obsolete
Rise / Fall Time (Typ): 4µs, 3.5µs (Max)
Turn On / Turn Off Time (Typ): 2µs, 3µs
Voltage - Output (Max): 70V
Supplier Device Package: 6-SMD
Current Transfer Ratio (Max): 125% @ 10mA
Vce Saturation (Max): 400mV
Current Transfer Ratio (Min): 63% @ 10mA
Voltage - Isolation: 4170Vrms
Current - Output / Channel: 50mA
Input Type: DC
Voltage - Forward (Vf) (Typ): 1.35V
Operating Temperature: -40°C ~ 100°C
Mounting Type: Surface Mount
Output Type: Transistor
Package / Case: 6-SMD, Gull Wing
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar
 Mindestbestellmenge: 1000 Stücke
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CNY17F2SR2VM CNY17F2SR2VM onsemi CNY17F4M-D.pdf Description: OPTOISO 4.17KV 1CH TRANS 6-SMD
Current - DC Forward (If) (Max): 60 mA
Number of Channels: 1
Part Status: Active
Rise / Fall Time (Typ): 4µs, 3.5µs (Max)
Turn On / Turn Off Time (Typ): 2µs, 3µs
Voltage - Output (Max): 70V
Supplier Device Package: 6-SMD
Current Transfer Ratio (Max): 125% @ 10mA
Vce Saturation (Max): 400mV
Current Transfer Ratio (Min): 63% @ 10mA
Voltage - Isolation: 4170Vrms
Current - Output / Channel: 50mA
Input Type: DC
Voltage - Forward (Vf) (Typ): 1.35V
Operating Temperature: -40°C ~ 100°C
Mounting Type: Surface Mount
Output Type: Transistor
Package / Case: 6-SMD, Gull Wing
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar
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CNY17F2TM CNY17F2TM onsemi cny17f4m-d.pdf Description: OPTOISO 4.17KV 1CH TRANS 6-DIP
Mounting Type: Through Hole
Output Type: Transistor
Package / Case: 6-DIP (0.400", 10.16mm)
Packaging: Bulk
Current - DC Forward (If) (Max): 60 mA
Number of Channels: 1
Part Status: Obsolete
Rise / Fall Time (Typ): 4µs, 3.5µs (Max)
Turn On / Turn Off Time (Typ): 2µs, 3µs
Voltage - Output (Max): 70V
Supplier Device Package: 6-DIP
Current Transfer Ratio (Max): 125% @ 10mA
Vce Saturation (Max): 400mV
Current Transfer Ratio (Min): 63% @ 10mA
Voltage - Isolation: 4170Vrms
Current - Output / Channel: 50mA
Input Type: DC
Voltage - Forward (Vf) (Typ): 1.35V
Operating Temperature: -40°C ~ 100°C
Produkt ist nicht verfügbar
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CNY17F2TM_F132 CNY17F2TM_F132 onsemi cny17f4m-d.pdf Description: OPTOISO 4.17KV 1CH TRANS 6-DIP
Current - DC Forward (If) (Max): 60 mA
Number of Channels: 1
Part Status: Obsolete
Rise / Fall Time (Typ): 4µs, 3.5µs (Max)
Turn On / Turn Off Time (Typ): 2µs, 3µs
Voltage - Output (Max): 70V
Supplier Device Package: 6-DIP
Current Transfer Ratio (Max): 125% @ 10mA
Vce Saturation (Max): 400mV
Current Transfer Ratio (Min): 63% @ 10mA
Voltage - Isolation: 4170Vrms
Voltage - Forward (Vf) (Typ): 1.35V
Operating Temperature: -40°C ~ 100°C
Mounting Type: Through Hole
Output Type: Transistor
Package / Case: 6-DIP (0.400", 10.16mm)
Packaging: Bulk
Current - Output / Channel: 50mA
Input Type: DC
Produkt ist nicht verfügbar
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CNY17F2TVM CNY17F2TVM onsemi CNY17F4M-D.pdf Description: OPTOISO 4.17KV 1CH TRANS 6-DIP
Packaging: Tube
Package / Case: 6-DIP (0.400", 10.16mm)
Output Type: Transistor
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 100°C
Voltage - Forward (Vf) (Typ): 1.35V
Input Type: DC
Current - Output / Channel: 50mA
Voltage - Isolation: 4170Vrms
Current Transfer Ratio (Min): 63% @ 10mA
Vce Saturation (Max): 400mV
Current Transfer Ratio (Max): 125% @ 10mA
Supplier Device Package: 6-DIP
Voltage - Output (Max): 70V
Turn On / Turn Off Time (Typ): 2µs, 3µs
Rise / Fall Time (Typ): 4µs, 3.5µs (Max)
Part Status: Active
Number of Channels: 1
Current - DC Forward (If) (Max): 60 mA
auf Bestellung 908 Stücke:
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19+1.15 EUR
50+0.63 EUR
100+0.57 EUR
500+0.48 EUR
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CNY17F2VM CNY17F2VM onsemi CNY17F4M-D.pdf Description: OPTOISO 4.17KV 1CH TRANS 6-DIP
Current - DC Forward (If) (Max): 60 mA
Number of Channels: 1
Part Status: Active
Rise / Fall Time (Typ): 4µs, 3.5µs (Max)
Turn On / Turn Off Time (Typ): 2µs, 3µs
Voltage - Output (Max): 70V
Supplier Device Package: 6-DIP
Current Transfer Ratio (Max): 125% @ 10mA
Vce Saturation (Max): 400mV
Current Transfer Ratio (Min): 63% @ 10mA
Voltage - Isolation: 4170Vrms
Current - Output / Channel: 50mA
Input Type: DC
Voltage - Forward (Vf) (Typ): 1.35V
Operating Temperature: -40°C ~ 100°C
Mounting Type: Through Hole
Output Type: Transistor
Package / Case: 6-DIP (0.300", 7.62mm)
Packaging: Bulk
Produkt ist nicht verfügbar
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CNY17F3SM CNY17F3SM onsemi CNY17F4M-D.pdf Description: OPTOISO 4.17KV 1CH TRANS 6-SMD
Current - DC Forward (If) (Max): 60 mA
Number of Channels: 1
Part Status: Active
Rise / Fall Time (Typ): 4µs, 3.5µs (Max)
Turn On / Turn Off Time (Typ): 2µs, 3µs
Voltage - Output (Max): 70V
Supplier Device Package: 6-SMD
Current Transfer Ratio (Max): 200% @ 10mA
Vce Saturation (Max): 400mV
Current Transfer Ratio (Min): 100% @ 10mA
Voltage - Isolation: 4170Vrms
Current - Output / Channel: 50mA
Input Type: DC
Voltage - Forward (Vf) (Typ): 1.35V
Operating Temperature: -40°C ~ 100°C
Mounting Type: Surface Mount
Output Type: Transistor
Package / Case: 6-SMD, Gull Wing
Packaging: Tube
auf Bestellung 4465 Stücke:
Lieferzeit 10-14 Tag (e)
19+1.15 EUR
50+0.63 EUR
100+0.57 EUR
500+0.48 EUR
1000+0.44 EUR
2000+0.42 EUR
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CNY17F3SR2M CNY17F3SR2M onsemi CNY17F4M-D.pdf Description: OPTOISO 4.17KV 1CH TRANS 6-SMD
Input Type: DC
Voltage - Forward (Vf) (Typ): 1.35V
Operating Temperature: -40°C ~ 100°C
Mounting Type: Surface Mount
Output Type: Transistor
Package / Case: 6-SMD, Gull Wing
Packaging: Tape & Reel (TR)
Current - DC Forward (If) (Max): 60 mA
Number of Channels: 1
Part Status: Active
Rise / Fall Time (Typ): 4µs, 3.5µs (Max)
Turn On / Turn Off Time (Typ): 2µs, 3µs
Voltage - Output (Max): 70V
Supplier Device Package: 6-SMD
Current Transfer Ratio (Max): 200% @ 10mA
Vce Saturation (Max): 400mV
Current Transfer Ratio (Min): 100% @ 10mA
Voltage - Isolation: 4170Vrms
Current - Output / Channel: 50mA
auf Bestellung 1000 Stücke:
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CNY17F3SR2M_F132 CNY17F3SR2M_F132 onsemi cny17f4m-d.pdf Description: OPTOISO 4.17KV 1CH TRANS 6-SMD
Current Transfer Ratio (Min): 100% @ 10mA
Voltage - Isolation: 4170Vrms
Current - Output / Channel: 50mA
Input Type: DC
Voltage - Forward (Vf) (Typ): 1.35V
Operating Temperature: -40°C ~ 100°C
Mounting Type: Surface Mount
Output Type: Transistor
Package / Case: 6-SMD, Gull Wing
Packaging: Tape & Reel (TR)
Current - DC Forward (If) (Max): 60 mA
Number of Channels: 1
Part Status: Obsolete
Rise / Fall Time (Typ): 4µs, 3.5µs (Max)
Turn On / Turn Off Time (Typ): 2µs, 3µs
Voltage - Output (Max): 70V
Supplier Device Package: 6-SMD
Current Transfer Ratio (Max): 200% @ 10mA
Vce Saturation (Max): 400mV
Produkt ist nicht verfügbar
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CNY17F3SR2VM CNY17F3SR2VM onsemi CNY17F4M-D.pdf Description: OPTOISO 4.17KV 1CH TRANS 6-SMD
Packaging: Tape & Reel (TR)
Current - DC Forward (If) (Max): 60 mA
Number of Channels: 1
Part Status: Active
Rise / Fall Time (Typ): 4µs, 3.5µs (Max)
Turn On / Turn Off Time (Typ): 2µs, 3µs
Voltage - Output (Max): 70V
Supplier Device Package: 6-SMD
Current Transfer Ratio (Max): 200% @ 10mA
Vce Saturation (Max): 400mV
Current Transfer Ratio (Min): 100% @ 10mA
Voltage - Isolation: 4170Vrms
Current - Output / Channel: 50mA
Input Type: DC
Voltage - Forward (Vf) (Typ): 1.35V
Operating Temperature: -40°C ~ 100°C
Mounting Type: Surface Mount
Output Type: Transistor
Package / Case: 6-SMD, Gull Wing
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1000+0.51 EUR
2000+0.48 EUR
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CNY17F3SR2VM_F132 CNY17F3SR2VM_F132 onsemi cny17f4m-d.pdf Description: OPTOISO 4.17KV 1CH TRANS 6-SMD
Output Type: Transistor
Package / Case: 6-SMD, Gull Wing
Packaging: Tape & Reel (TR)
Current - DC Forward (If) (Max): 60 mA
Number of Channels: 1
Part Status: Obsolete
Rise / Fall Time (Typ): 4µs, 3.5µs (Max)
Turn On / Turn Off Time (Typ): 2µs, 3µs
Voltage - Output (Max): 70V
Supplier Device Package: 6-SMD
Current Transfer Ratio (Max): 200% @ 10mA
Vce Saturation (Max): 400mV
Current Transfer Ratio (Min): 100% @ 10mA
Voltage - Isolation: 4170Vrms
Current - Output / Channel: 50mA
Input Type: DC
Voltage - Forward (Vf) (Typ): 1.35V
Operating Temperature: -40°C ~ 100°C
Mounting Type: Surface Mount
Produkt ist nicht verfügbar
 Mindestbestellmenge: 1000 Stücke
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CNY17F3SVM CNY17F3SVM onsemi cny17f4m-d.pdf Description: OPTOISO 4.17KV 1CH TRANS 6-SMD
Current - DC Forward (If) (Max): 60 mA
Number of Channels: 1
Part Status: Obsolete
Rise / Fall Time (Typ): 4µs, 3.5µs (Max)
Turn On / Turn Off Time (Typ): 2µs, 3µs
Voltage - Output (Max): 70V
Supplier Device Package: 6-SMD
Current Transfer Ratio (Max): 200% @ 10mA
Vce Saturation (Max): 400mV
Current Transfer Ratio (Min): 100% @ 10mA
Voltage - Isolation: 4170Vrms
Current - Output / Channel: 50mA
Input Type: DC
Voltage - Forward (Vf) (Typ): 1.35V
Operating Temperature: -40°C ~ 100°C
Mounting Type: Surface Mount
Output Type: Transistor
Package / Case: 6-SMD, Gull Wing
Packaging: Bulk
Produkt ist nicht verfügbar
 Mindestbestellmenge: 1000 Stücke
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CNY17F3TVM CNY17F3TVM onsemi cny17f4m-d.pdf Description: OPTOISO 4.17KV 1CH TRANS 6-DIP
Vce Saturation (Max): 400mV
Current Transfer Ratio (Min): 100% @ 10mA
Voltage - Isolation: 4170Vrms
Current - Output / Channel: 50mA
Input Type: DC
Voltage - Forward (Vf) (Typ): 1.35V
Operating Temperature: -40°C ~ 100°C
Mounting Type: Through Hole
Output Type: Transistor
Package / Case: 6-DIP (0.400", 10.16mm)
Packaging: Tube
Current - DC Forward (If) (Max): 60 mA
Number of Channels: 1
Part Status: Active
Rise / Fall Time (Typ): 4µs, 3.5µs (Max)
Turn On / Turn Off Time (Typ): 2µs, 3µs
Voltage - Output (Max): 70V
Supplier Device Package: 6-DIP
Current Transfer Ratio (Max): 200% @ 10mA
auf Bestellung 24576 Stücke:
Lieferzeit 10-14 Tag (e)
19+1.15 EUR
50+0.63 EUR
100+0.58 EUR
500+0.48 EUR
1000+0.45 EUR
2000+0.42 EUR
5000+0.39 EUR
10000+0.37 EUR
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CNY17F4SR2VM_F132 CNY17F4SR2VM_F132 onsemi cny17f4m-d.pdf Description: OPTOISO 4.17KV 1CH TRANS 6-SMD
Packaging: Tape & Reel (TR)
Package / Case: 6-SMD, Gull Wing
Output Type: Transistor
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 100°C
Voltage - Forward (Vf) (Typ): 1.35V
Input Type: DC
Current - Output / Channel: 50mA
Voltage - Isolation: 4170Vrms
Current Transfer Ratio (Min): 160% @ 10mA
Vce Saturation (Max): 400mV
Current Transfer Ratio (Max): 320% @ 10mA
Supplier Device Package: 6-SMD
Voltage - Output (Max): 70V
Turn On / Turn Off Time (Typ): 2µs, 3µs
Rise / Fall Time (Typ): 4µs, 3.5µs (Max)
Number of Channels: 1
Current - DC Forward (If) (Max): 60 mA
Produkt ist nicht verfügbar
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D44H10TU D44H10TU onsemi TO220B03_Pkg_Dwg.pdf Description: TRANS NPN 80V 8A TO220-3
Voltage - Collector Emitter Breakdown (Max): 80 V
Current - Collector (Ic) (Max): 8 A
Supplier Device Package: TO-220-3
Transistor Type: NPN
Mounting Type: Through Hole
Package / Case: TO-220-3
Packaging: Tube
Produkt ist nicht verfügbar
 Mindestbestellmenge: 1000 Stücke
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FAN4800IM FAN4800IM onsemi FAN4800.pdf Description: IC PFC CTLR CCM/DCM 84KHZ 16SOIC
Packaging: Tube
Package / Case: 16-SOIC (0.295", 7.50mm Width)
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 125°C
Voltage - Supply: 11V ~ 16.5V
Frequency - Switching: 66kHz ~ 84kHz
Mode: Continuous Conduction (CCM), Discontinuous Conduction (DCM)
Supplier Device Package: 16-SOIC
Part Status: Obsolete
Current - Startup: 100 µA
Produkt ist nicht verfügbar
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FAN5240QSC FAN5240QSC onsemi FAN5240.pdf Description: IC REG CTRLR MULTIPH 1OUT 28QSOP
Part Status: Obsolete
Supplier Device Package: 28-QSOP
Applications: Controller, AMD Mobile Athlon™, Duron™
Operating Temperature: -10°C ~ 85°C
Voltage - Input: 6V ~ 24V
Number of Outputs: 1
Mounting Type: Surface Mount
Voltage - Output: 0.93V ~ 2V
Package / Case: 28-SSOP (0.154", 3.90mm Width)
Packaging: Tube
Produkt ist nicht verfügbar
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FAN7311BM FAN7311BM onsemi FAN7311B.pdf Description: IC LCD BKLT INVERTER DRV 20SOIC
Part Status: Obsolete
Supplier Device Package: 20-SOIC
Applications: LCD TV/Monitor
Voltage - Supply: 5V ~ 25.5V
Operating Temperature: -25°C ~ 85°C
Mounting Type: Surface Mount
Package / Case: 20-SOIC (0.295", 7.50mm Width)
Packaging: Tube
Produkt ist nicht verfügbar
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FAN7311M FAN7311M onsemi FAN7311.pdf Description: IC LCD BKLT INVERTER DRV 20SOIC
Part Status: Obsolete
Supplier Device Package: 20-SOIC
Applications: LCD TV/Monitor
Voltage - Supply: 5V ~ 25.5V
Operating Temperature: -25°C ~ 85°C
Mounting Type: Surface Mount
Package / Case: 20-SOIC (0.295", 7.50mm Width)
Packaging: Tube
Produkt ist nicht verfügbar
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FAN7382M1 FAN7382M1 onsemi fan7382-d.pdf Description: IC GATE DRVR HALF-BRIDGE 14SOP
Packaging: Tube
Package / Case: 14-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Voltage - Supply: 10V ~ 20V
Input Type: Non-Inverting
High Side Voltage - Max (Bootstrap): 600 V
Supplier Device Package: 14-SOP
Rise / Fall Time (Typ): 60ns, 30ns
Channel Type: Independent
Driven Configuration: Half-Bridge
Number of Drivers: 2
Gate Type: IGBT, MOSFET (N-Channel)
Logic Voltage - VIL, VIH: 0.8V, 2.5V
Current - Peak Output (Source, Sink): 350mA, 650mA
Part Status: Obsolete
DigiKey Programmable: Not Verified
Produkt ist nicht verfügbar
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FAN7384M FAN7384M onsemi fan7384-d.pdf Description: IC GATE DRVR HALF-BRIDGE 14SOP
DigiKey Programmable: Not Verified
Part Status: Obsolete
Current - Peak Output (Source, Sink): 250mA, 500mA
Logic Voltage - VIL, VIH: 1.2V, 2.5V
Gate Type: IGBT, N-Channel MOSFET
Number of Drivers: 2
Driven Configuration: Half-Bridge
Channel Type: Independent
Rise / Fall Time (Typ): 50ns, 30ns
Supplier Device Package: 14-SOIC
High Side Voltage - Max (Bootstrap): 600 V
Input Type: Non-Inverting
Voltage - Supply: 13V ~ 20V
Operating Temperature: -40°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 14-SOIC (0.154", 3.90mm Width)
Packaging: Tube
Produkt ist nicht verfügbar
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FAN7387M FAN7387M onsemi fan7387-d.pdf Description: IC BALLAST CNTRL 22KHZ 8SOP
Current - Supply: 800 µA
Part Status: Obsolete
Dimming: No
Supplier Device Package: 8-SOIC
Voltage - Supply: 11V ~ 14V
Operating Temperature: -40°C ~ 125°C
Type: Ballast Controller
Frequency: 18kHz ~ 22kHz
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Packaging: Tube
Produkt ist nicht verfügbar
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FAN7388M FAN7388M onsemi fan7388-d.pdf Description: IC GATE DRVR HALF-BRIDGE 20SOIC
Part Status: Obsolete
Current - Peak Output (Source, Sink): 350mA, 650mA
Logic Voltage - VIL, VIH: 1V, 2.5V
Gate Type: IGBT, MOSFET (N-Channel)
Number of Drivers: 6
Driven Configuration: Half-Bridge
Channel Type: 3-Phase
Rise / Fall Time (Typ): 50ns, 30ns
Supplier Device Package: 20-SOIC
High Side Voltage - Max (Bootstrap): 600 V
Input Type: Non-Inverting
Voltage - Supply: 10V ~ 20V
Operating Temperature: -40°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 20-SOIC (0.295", 7.50mm Width)
Packaging: Tube
DigiKey Programmable: Not Verified
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FAN7390M FAN7390M onsemi fan7390-d.pdf Description: IC GATE DRVR HALF-BRIDGE 8SOIC
Operating Temperature: -40°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Packaging: Tube
DigiKey Programmable: Not Verified
Part Status: Obsolete
Current - Peak Output (Source, Sink): 4.5A, 4.5A
Logic Voltage - VIL, VIH: 1.2V, 2.5V
Gate Type: IGBT, N-Channel MOSFET
Number of Drivers: 2
Driven Configuration: Half-Bridge
Channel Type: Independent
Rise / Fall Time (Typ): 25ns, 20ns
Supplier Device Package: 8-SOIC
High Side Voltage - Max (Bootstrap): 600 V
Input Type: Non-Inverting
Voltage - Supply: 10V ~ 22V
Produkt ist nicht verfügbar
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FAN7390M1 FAN7390M1 onsemi fan7390-d.pdf Description: IC GATE DRVR HALF-BRIDGE 14SOP
DigiKey Programmable: Not Verified
Part Status: Obsolete
Current - Peak Output (Source, Sink): 4.5A, 4.5A
Logic Voltage - VIL, VIH: 1.2V, 2.5V
Gate Type: IGBT, N-Channel MOSFET
Number of Drivers: 2
Driven Configuration: Half-Bridge
Channel Type: Independent
Rise / Fall Time (Typ): 25ns, 20ns
Supplier Device Package: 14-SOP
High Side Voltage - Max (Bootstrap): 600 V
Input Type: Non-Inverting
Voltage - Supply: 10V ~ 22V
Operating Temperature: -40°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 14-SOIC (0.154", 3.90mm Width)
Packaging: Tube
Produkt ist nicht verfügbar
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FAN7602BM FAN7602BM onsemi fan7602b-d.pdf Description: IC OFFLINE SWITCH FLYBACK 8SOIC
Packaging: Tube
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -25°C ~ 125°C (TA)
Duty Cycle: 75%
Frequency - Switching: 65kHz
Internal Switch(s): No
Output Isolation: Isolated
Topology: Flyback
Voltage - Supply (Vcc/Vdd): 8V ~ 20V
Supplier Device Package: 8-SOIC
Fault Protection: Over Load, Over Voltage
Voltage - Start Up: 12 V
Part Status: Obsolete
Power (Watts): 48 W
Produkt ist nicht verfügbar
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FAN7711M FAN7711M onsemi fan7711-d.pdf Description: IC BALLAST CNTRL 57.3KHZ 8SOP
Current - Supply: 3.2 mA
Dimming: No
Supplier Device Package: 8-SOIC
Voltage - Supply: 12.4V ~ 15.2V
Operating Temperature: -25°C ~ 125°C
Type: Ballast Controller
Frequency: 48.7kHz ~ 57.3kHz
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Packaging: Tube
Produkt ist nicht verfügbar
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FAN7842M FAN7842M onsemi fan7842-d.pdf Description: IC GATE DRVR HALF-BRIDGE 8SOIC
Packaging: Tube
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Voltage - Supply: 10V ~ 20V
Input Type: Non-Inverting
High Side Voltage - Max (Bootstrap): 200 V
Supplier Device Package: 8-SOIC
Rise / Fall Time (Typ): 60ns, 30ns
Channel Type: Independent
Driven Configuration: Half-Bridge
Number of Drivers: 2
Gate Type: IGBT, MOSFET (N-Channel)
Logic Voltage - VIL, VIH: 0.8V, 2.9V
Current - Peak Output (Source, Sink): 350mA, 650mA
Part Status: Obsolete
DigiKey Programmable: Not Verified
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FAN7888M FAN7888M onsemi fan7888-d.pdf Description: IC GATE DRVR HALF-BRIDGE 20SOIC
Packaging: Tube
Package / Case: 20-SOIC (0.295", 7.50mm Width)
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Voltage - Supply: 10V ~ 20V
Input Type: Non-Inverting
High Side Voltage - Max (Bootstrap): 200 V
Supplier Device Package: 20-SOIC
Rise / Fall Time (Typ): 50ns, 30ns
Channel Type: 3-Phase
Driven Configuration: Half-Bridge
Number of Drivers: 6
Gate Type: IGBT, MOSFET (N-Channel)
Logic Voltage - VIL, VIH: 1V, 2.5V
Current - Peak Output (Source, Sink): 350mA, 650mA
DigiKey Programmable: Not Verified
Produkt ist nicht verfügbar
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FCA16N60_F109 FCA16N60_F109 onsemi FCA16N60_F109.pdf Description: MOSFET N-CH 600V 16A TO3PN
Input Capacitance (Ciss) (Max) @ Vds: 2250 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 70 nC @ 10 V
Drain to Source Voltage (Vdss): 600 V
Vgs (Max): ±30V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Obsolete
Supplier Device Package: TO-3PN
Vgs(th) (Max) @ Id: 5V @ 250µA
Power Dissipation (Max): 167W (Tc)
Rds On (Max) @ Id, Vgs: 260mOhm @ 8A, 10V
Current - Continuous Drain (Id) @ 25°C: 16A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-3P-3, SC-65-3
Packaging: Tube
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FCA47N60-F109 FCA47N60-F109 onsemi FCA47N60-F109-D.PDF Description: MOSFET N-CH 600V 47A TO3PN
Packaging: Tube
Package / Case: TO-3P-3, SC-65-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 47A (Tc)
Rds On (Max) @ Id, Vgs: 70mOhm @ 23.5A, 10V
Power Dissipation (Max): 417W (Tc)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: TO-3PN
Part Status: Not For New Designs
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 270 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 8000 pF @ 25 V
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FCPF20N60TYDTU FCPF20N60TYDTU onsemi fcp20n60-d.pdf Description: MOSFET N-CH 600V 20A TO220F-3
Packaging: Tube
Package / Case: TO-220-3 Full Pack, Formed Leads
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 20A (Tc)
Rds On (Max) @ Id, Vgs: 190mOhm @ 10A, 10V
Power Dissipation (Max): 39W (Tc)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: TO-220F-3 (Y-Forming)
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 98 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3080 pF @ 25 V
Produkt ist nicht verfügbar
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FD70N20PWD FD70N20PWD onsemi Description: MOSFET N-CH 200V 70A TO3P
Packaging: Tube
Drain to Source Voltage (Vdss): 200 V
Supplier Device Package: TO-3P
Current - Continuous Drain (Id) @ 25°C: 70A (Ta)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Mounting Type: Through Hole
Package / Case: TO-3P-3, SC-65-3
Produkt ist nicht verfügbar
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FDA20N50-F109 FDA20N50-F109 onsemi FDA20N50_F109-D.PDF Description: MOSFET N-CH 500V 22A TO3PN
Packaging: Tube
Package / Case: TO-3P-3, SC-65-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 22A (Tc)
Rds On (Max) @ Id, Vgs: 230mOhm @ 11A, 10V
Power Dissipation (Max): 280W (Tc)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: TO-3PN
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 500 V
Gate Charge (Qg) (Max) @ Vgs: 59.5 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3120 pF @ 25 V
Voltage Coupled to Gate Charge (Qg) (Max) @ Vgs: 10
Voltage Coupled to Input Capacitance (Ciss) (Max) @ Vds: 25
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FDA59N25 FDA59N25 onsemi fda59n25-d.pdf Description: MOSFET N-CH 250V 59A TO3PN
Packaging: Tube
Package / Case: TO-3P-3, SC-65-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 59A (Tc)
Rds On (Max) @ Id, Vgs: 49mOhm @ 29.5A, 10V
Power Dissipation (Max): 392W (Tc)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: TO-3PN
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 250 V
Gate Charge (Qg) (Max) @ Vgs: 82 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4020 pF @ 25 V
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FDA59N30 FDA59N30 onsemi FDA59N30-D.pdf Description: MOSFET N-CH 300V 59A TO3PN
Packaging: Tube
Package / Case: TO-3P-3, SC-65-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 59A (Tc)
Rds On (Max) @ Id, Vgs: 56mOhm @ 29.5A, 10V
Power Dissipation (Max): 500W (Tc)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: TO-3PN
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 300 V
Gate Charge (Qg) (Max) @ Vgs: 100 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4670 pF @ 25 V
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3+9.38 EUR
30+5.26 EUR
120+4.36 EUR
510+3.69 EUR
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FDA8440 FDA8440 onsemi FDA8440-D.pdf Description: MOSFET N-CH 40V 30A/100A TO3PN
Input Capacitance (Ciss) (Max) @ Vds: 24740 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 450 nC @ 10 V
Drain to Source Voltage (Vdss): 40 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Supplier Device Package: TO-3PN
Vgs(th) (Max) @ Id: 3V @ 250µA
Power Dissipation (Max): 306W (Tc)
Rds On (Max) @ Id, Vgs: 2.1mOhm @ 80A, 10V
Current - Continuous Drain (Id) @ 25°C: 30A (Ta), 100A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-3P-3, SC-65-3
Packaging: Tube
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FDB12N50FTM-WS FDB12N50FTM-WS onsemi fdb12n50f-d.pdf Description: MOSFET N-CH 500V 11.5A D2PAK
Input Capacitance (Ciss) (Max) @ Vds: 1395 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 30 nC @ 10 V
Drain to Source Voltage (Vdss): 500 V
Vgs (Max): ±30V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Obsolete
Supplier Device Package: TO-263 (D2Pak)
Vgs(th) (Max) @ Id: 5V @ 250µA
Power Dissipation (Max): 165W (Tc)
Rds On (Max) @ Id, Vgs: 700mOhm @ 6A, 10V
Current - Continuous Drain (Id) @ 25°C: 11.5A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Packaging: Tape & Reel (TR)
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FDB12N50UTM_WS FDB12N50UTM_WS onsemi Description: MOSFET N-CH 500V 10A D2PAK
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Obsolete
Supplier Device Package: D²PAK (TO-263)
Vgs(th) (Max) @ Id: 5V @ 250µA
Power Dissipation (Max): 165W (Tc)
Rds On (Max) @ Id, Vgs: 800mOhm @ 5A, 10V
Current - Continuous Drain (Id) @ 25°C: 10A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Packaging: Tape & Reel (TR)
Input Capacitance (Ciss) (Max) @ Vds: 1395 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 30 nC @ 10 V
Drain to Source Voltage (Vdss): 500 V
Vgs (Max): ±30V
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FDB8441-F085 FDB8441-F085 onsemi fdb8441_f085-d.pdf Description: MOSFET N-CH 40V 28A/80A TO263AB
Qualification: AEC-Q101
Grade: Automotive
Input Capacitance (Ciss) (Max) @ Vds: 15000 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 280 nC @ 10 V
Drain to Source Voltage (Vdss): 40 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Obsolete
Supplier Device Package: TO-263 (D2Pak)
Vgs(th) (Max) @ Id: 4V @ 250µA
Power Dissipation (Max): 300W (Tc)
Rds On (Max) @ Id, Vgs: 2.5mOhm @ 80A, 10V
Current - Continuous Drain (Id) @ 25°C: 28A (Ta), 80A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Packaging: Tape & Reel (TR)
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FDB8444TS FDB8444TS onsemi FDB8444TS.pdf Description: MOSFET N-CH 40V 20A/70A TO263-5
Input Capacitance (Ciss) (Max) @ Vds: 8410 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 338 nC @ 20 V
Drain to Source Voltage (Vdss): 40 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Supplier Device Package: TO-263-5
Vgs(th) (Max) @ Id: 4V @ 250µA
Power Dissipation (Max): 181W (Tc)
Rds On (Max) @ Id, Vgs: 5mOhm @ 70A, 10V
Current - Continuous Drain (Id) @ 25°C: 20A (Ta), 70A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-263-6, D2PAK (5 Leads + Tab), TO-263BA
Packaging: Tape & Reel (TR)
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FDC2512_F095 FDC2512_F095 onsemi fdc2512-d.pdf Description: MOSFET N-CH 150V 1.4A SUPERSOT6
Input Capacitance (Ciss) (Max) @ Vds: 344 pF @ 75 V
Gate Charge (Qg) (Max) @ Vgs: 11 nC @ 10 V
Drain to Source Voltage (Vdss): 150 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Supplier Device Package: SuperSOT™-6
Vgs(th) (Max) @ Id: 4V @ 250µA
Power Dissipation (Max): 1.6W (Ta)
Rds On (Max) @ Id, Vgs: 425mOhm @ 1.4A, 10V
Current - Continuous Drain (Id) @ 25°C: 1.4A (Ta)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: SOT-23-6 Thin, TSOT-23-6
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar
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FDC2612_F095 FDC2612_F095 onsemi fdc2612-d.pdf Description: MOSFET N-CH 200V 1.1A SUPERSOT6
Input Capacitance (Ciss) (Max) @ Vds: 234 pF @ 100 V
Gate Charge (Qg) (Max) @ Vgs: 11 nC @ 10 V
Drain to Source Voltage (Vdss): 200 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Obsolete
Supplier Device Package: SuperSOT™-6
Vgs(th) (Max) @ Id: 4.5V @ 250µA
Power Dissipation (Max): 1.6W (Ta)
Rds On (Max) @ Id, Vgs: 725mOhm @ 1.1A, 10V
Current - Continuous Drain (Id) @ 25°C: 1.1A (Ta)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: SOT-23-6 Thin, TSOT-23-6
Packaging: Tape & Reel (TR)
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FDC3512_F095 FDC3512_F095 onsemi fdc3512-d.pdf Description: MOSFET N-CH 80V 3A SUPERSOT6
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FDC5612_F095 FDC5612_F095 onsemi fdc5612-d.pdf Description: MOSFET N-CH 60V 4.3A SUPERSOT6
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: SOT-23-6 Thin, TSOT-23-6
Packaging: Tape & Reel (TR)
Input Capacitance (Ciss) (Max) @ Vds: 650 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 18 nC @ 10 V
Drain to Source Voltage (Vdss): 60 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Supplier Device Package: SuperSOT™-6
Vgs(th) (Max) @ Id: 4V @ 250µA
Power Dissipation (Max): 1.6W (Ta)
Rds On (Max) @ Id, Vgs: 55mOhm @ 4.3A, 10V
Current - Continuous Drain (Id) @ 25°C: 4.3A (Ta)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
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FDC6000NZ_F077 onsemi FDC6000NZ.pdf Description: MOSFET 2N-CH 20V 7.3A 6SSOT
Supplier Device Package: SuperSOT™-6 FLMP
Vgs(th) (Max) @ Id: 1.5V @ 250µA
FET Feature: Logic Level Gate
Gate Charge (Qg) (Max) @ Vgs: 11nC @ 4.5V
Rds On (Max) @ Id, Vgs: 20mOhm @ 6.5A, 4.5V
Input Capacitance (Ciss) (Max) @ Vds: 840pF @ 10V
Current - Continuous Drain (Id) @ 25°C: 7.3A
Drain to Source Voltage (Vdss): 20V
Power - Max: 1.2W
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Configuration: 2 N-Channel (Dual)
Mounting Type: Surface Mount
Package / Case: 6-SSOT Flat-lead, SuperSOT™-6 FLMP
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
FDC633N_F095 FDC633N_F095 onsemi FDC633N.pdf Description: MOSFET N-CH 30V 5.2A SUPERSOT6
Input Capacitance (Ciss) (Max) @ Vds: 538 pF @ 10 V
Gate Charge (Qg) (Max) @ Vgs: 16 nC @ 4.5 V
Drain to Source Voltage (Vdss): 30 V
Vgs (Max): ±8V
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
Part Status: Obsolete
Supplier Device Package: SuperSOT™-6
Vgs(th) (Max) @ Id: 1V @ 250µA
Power Dissipation (Max): 1.6W (Ta)
Rds On (Max) @ Id, Vgs: 42mOhm @ 5.2A, 4.5V
Current - Continuous Drain (Id) @ 25°C: 5.2A (Ta)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: SOT-23-6 Thin, TSOT-23-6
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
FDC640P_F095 FDC640P_F095 onsemi fdc640p-d.pdf Description: MOSFET P-CH 20V 4.5A SUPERSOT6
Input Capacitance (Ciss) (Max) @ Vds: 890 pF @ 10 V
Gate Charge (Qg) (Max) @ Vgs: 13 nC @ 4.5 V
Drain to Source Voltage (Vdss): 20 V
Vgs (Max): ±12V
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
Part Status: Obsolete
Supplier Device Package: SuperSOT™-6
Vgs(th) (Max) @ Id: 1.5V @ 250µA
Power Dissipation (Max): 1.6W (Ta)
Rds On (Max) @ Id, Vgs: 53mOhm @ 4.5A, 4.5V
Current - Continuous Drain (Id) @ 25°C: 4.5A (Ta)
FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: SOT-23-6 Thin, TSOT-23-6
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar
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FDC645N_F095 FDC645N_F095 onsemi ONSM-S-A0003586841-1.pdf?t.download=true&u=5oefqw Description: MOSFET N-CH 30V 5.5A SUPERSOT6
Packaging: Tape & Reel (TR)
Package / Case: SOT-23-6 Thin, TSOT-23-6
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 5.5A (Ta)
Rds On (Max) @ Id, Vgs: 26mOhm @ 6.2A, 10V
Power Dissipation (Max): 1.6W (Ta)
Vgs(th) (Max) @ Id: 2V @ 250µA
Supplier Device Package: SuperSOT™-6
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±12V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 21 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 1460 pF @ 15 V
Produkt ist nicht verfügbar
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FDC699P_F077 onsemi FDC699P.pdf Description: MOSFET P-CH 20V 7A SUPERSOT6
Packaging: Tape & Reel (TR)
Package / Case: 6-SSOT Flat-lead, SuperSOT™-6 FLMP
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 7A (Ta)
Rds On (Max) @ Id, Vgs: 22mOhm @ 7A, 4.5V
Power Dissipation (Max): 2W (Ta)
Vgs(th) (Max) @ Id: 1.5V @ 250µA
Supplier Device Package: SuperSOT™-6 FLMP
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
Vgs (Max): ±12V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 38 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 2640 pF @ 10 V
Produkt ist nicht verfügbar
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FDC796N_F077 onsemi FDC796N.pdf Description: MOSFET N-CH 30V 12.5A SUPERSOT6
Packaging: Tape & Reel (TR)
Package / Case: 6-SSOT Flat-lead, SuperSOT™-6 FLMP
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 12.5A (Ta)
Rds On (Max) @ Id, Vgs: 9mOhm @ 12.5A, 10V
Power Dissipation (Max): 2W (Ta)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: SuperSOT™-6 FLMP
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 20 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 1444 pF @ 15 V
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
FDD16AN08A0_NF054 FDD16AN08A0_NF054 onsemi FAIRS45904-1.pdf?t.download=true&u=5oefqw Description: MOSFET N-CH 75V 9A/50A DPAK
Input Capacitance (Ciss) (Max) @ Vds: 1874 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 47 nC @ 10 V
Drain to Source Voltage (Vdss): 75 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Part Status: Obsolete
Supplier Device Package: TO-252AA
Vgs(th) (Max) @ Id: 4V @ 250µA
Power Dissipation (Max): 135W (Tc)
Rds On (Max) @ Id, Vgs: 16mOhm @ 50A, 10V
Current - Continuous Drain (Id) @ 25°C: 9A (Ta), 50A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
FDD3682-F085 FDD3682-F085 onsemi fdd3682_f085-d.pdf Description: MOSFET N-CH 100V 5.5/32A TO252AA
Input Capacitance (Ciss) (Max) @ Vds: 1250 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 28 nC @ 10 V
Drain to Source Voltage (Vdss): 100 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Part Status: Obsolete
Supplier Device Package: TO-252AA
Vgs(th) (Max) @ Id: 4V @ 250µA
Power Dissipation (Max): 95W (Tc)
Rds On (Max) @ Id, Vgs: 36mOhm @ 32A, 10V
Current - Continuous Drain (Id) @ 25°C: 5.5A (Ta), 32A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Packaging: Tape & Reel (TR)
Qualification: AEC-Q101
Grade: Automotive
Produkt ist nicht verfügbar
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CNY174SR2VM cny17f4m-d.pdf
CNY174SR2VM
Hersteller: onsemi
Description: OPTOISO 4.17KV TRANS W/BASE 6SMD
Current - DC Forward (If) (Max): 60 mA
Number of Channels: 1
Part Status: Active
Rise / Fall Time (Typ): 4µs, 3.5µs (Max)
Turn On / Turn Off Time (Typ): 2µs, 3µs
Voltage - Output (Max): 70V
Supplier Device Package: 6-SMD
Current Transfer Ratio (Max): 320% @ 10mA
Vce Saturation (Max): 400mV
Current Transfer Ratio (Min): 160% @ 10mA
Voltage - Isolation: 4170Vrms
Current - Output / Channel: 50mA
Input Type: DC
Voltage - Forward (Vf) (Typ): 1.35V
Operating Temperature: -40°C ~ 100°C
Mounting Type: Surface Mount
Output Type: Transistor with Base
Package / Case: 6-SMD, Gull Wing
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar
Mindestbestellmenge: 1000 Stücke
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CNY174SVM cny17f4m-d.pdf
CNY174SVM
Hersteller: onsemi
Description: OPTOISO 4.17KV TRANS W/BASE 6SMD
Current - DC Forward (If) (Max): 60 mA
Number of Channels: 1
Part Status: Active
Rise / Fall Time (Typ): 4µs, 3.5µs (Max)
Turn On / Turn Off Time (Typ): 2µs, 3µs
Voltage - Output (Max): 70V
Supplier Device Package: 6-SMD
Current Transfer Ratio (Max): 320% @ 10mA
Vce Saturation (Max): 400mV
Current Transfer Ratio (Min): 160% @ 10mA
Voltage - Isolation: 4170Vrms
Current - Output / Channel: 50mA
Input Type: DC
Voltage - Forward (Vf) (Typ): 1.35V
Operating Temperature: -40°C ~ 100°C
Mounting Type: Surface Mount
Output Type: Transistor with Base
Package / Case: 6-SMD, Gull Wing
Packaging: Bulk
Produkt ist nicht verfügbar
Mindestbestellmenge: 1000 Stücke
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CNY174TM cny17f4m-d.pdf
CNY174TM
Hersteller: onsemi
Description: OPTOISO 4.17KV TRANS W/BASE 6DIP
Part Status: Obsolete
Rise / Fall Time (Typ): 4µs, 3.5µs (Max)
Turn On / Turn Off Time (Typ): 2µs, 3µs
Voltage - Output (Max): 70V
Supplier Device Package: 6-DIP
Current Transfer Ratio (Max): 320% @ 10mA
Vce Saturation (Max): 400mV
Current Transfer Ratio (Min): 160% @ 10mA
Voltage - Isolation: 4170Vrms
Current - Output / Channel: 50mA
Input Type: DC
Voltage - Forward (Vf) (Typ): 1.35V
Operating Temperature: -40°C ~ 100°C
Mounting Type: Through Hole
Output Type: Transistor with Base
Package / Case: 6-DIP (0.400", 10.16mm)
Packaging: Bulk
Current - DC Forward (If) (Max): 60 mA
Number of Channels: 1
Produkt ist nicht verfügbar
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CNY17F1SR2VM cny17f4m-d.pdf
CNY17F1SR2VM
Hersteller: onsemi
Description: OPTOISO 4.17KV TRANS 6SMD
Current - DC Forward (If) (Max): 60 mA
Number of Channels: 1
Part Status: Active
Rise / Fall Time (Typ): 4µs, 3.5µs (Max)
Turn On / Turn Off Time (Typ): 2µs, 3µs
Voltage - Output (Max): 70V
Supplier Device Package: 6-SMD
Current Transfer Ratio (Max): 80% @ 10mA
Vce Saturation (Max): 400mV
Current Transfer Ratio (Min): 40% @ 10mA
Voltage - Isolation: 4170Vrms
Current - Output / Channel: 50mA
Input Type: DC
Voltage - Forward (Vf) (Typ): 1.35V
Operating Temperature: -40°C ~ 100°C
Mounting Type: Surface Mount
Output Type: Transistor
Package / Case: 6-SMD, Gull Wing
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar
Mindestbestellmenge: 1000 Stücke
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CNY17F1SVM cny17f4m-d.pdf
CNY17F1SVM
Hersteller: onsemi
Description: OPTOISO 4.17KV TRANS 6SMD
Current Transfer Ratio (Min): 40% @ 10mA
Voltage - Isolation: 4170Vrms
Current - Output / Channel: 50mA
Input Type: DC
Voltage - Forward (Vf) (Typ): 1.35V
Operating Temperature: -40°C ~ 100°C
Mounting Type: Surface Mount
Output Type: Transistor
Package / Case: 6-SMD, Gull Wing
Packaging: Bulk
Current - DC Forward (If) (Max): 60 mA
Number of Channels: 1
Rise / Fall Time (Typ): 4µs, 3.5µs (Max)
Turn On / Turn Off Time (Typ): 2µs, 3µs
Voltage - Output (Max): 70V
Supplier Device Package: 6-SMD
Current Transfer Ratio (Max): 80% @ 10mA
Vce Saturation (Max): 400mV
Produkt ist nicht verfügbar
Mindestbestellmenge: 1000 Stücke
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CNY17F1TM cny17f4m-d.pdf
CNY17F1TM
Hersteller: onsemi
Description: OPTOISO 4.17KV TRANS 6DIP
Rise / Fall Time (Typ): 4µs, 3.5µs (Max)
Turn On / Turn Off Time (Typ): 2µs, 3µs
Voltage - Output (Max): 70V
Supplier Device Package: 6-DIP
Current Transfer Ratio (Max): 80% @ 10mA
Vce Saturation (Max): 400mV
Current Transfer Ratio (Min): 40% @ 10mA
Voltage - Isolation: 4170Vrms
Current - Output / Channel: 50mA
Input Type: DC
Voltage - Forward (Vf) (Typ): 1.35V
Operating Temperature: -40°C ~ 100°C
Mounting Type: Through Hole
Output Type: Transistor
Package / Case: 6-DIP (0.400", 10.16mm)
Packaging: Bulk
Current - DC Forward (If) (Max): 60 mA
Number of Channels: 1
Part Status: Obsolete
Produkt ist nicht verfügbar
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CNY17F2SM cny17f4m-d.pdf
CNY17F2SM
Hersteller: onsemi
Description: OPTOISO 4.17KV 1CH TRANS 6-SMD
Packaging: Tube
Package / Case: 6-SMD, Gull Wing
Output Type: Transistor
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 100°C
Voltage - Forward (Vf) (Typ): 1.35V
Input Type: DC
Current - Output / Channel: 50mA
Voltage - Isolation: 4170Vrms
Current Transfer Ratio (Min): 63% @ 10mA
Vce Saturation (Max): 400mV
Current Transfer Ratio (Max): 125% @ 10mA
Supplier Device Package: 6-SMD
Voltage - Output (Max): 70V
Turn On / Turn Off Time (Typ): 2µs, 3µs
Rise / Fall Time (Typ): 4µs, 3.5µs (Max)
Part Status: Active
Number of Channels: 1
Current - DC Forward (If) (Max): 60 mA
auf Bestellung 1826 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
17+1.24 EUR
50+0.68 EUR
100+0.62 EUR
500+0.51 EUR
1000+0.48 EUR
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CNY17F2SR2M_F132 cny17f4m-d.pdf
CNY17F2SR2M_F132
Hersteller: onsemi
Description: OPTOISO 4.17KV 1CH TRANS 6-SMD
Current - DC Forward (If) (Max): 60 mA
Number of Channels: 1
Part Status: Obsolete
Rise / Fall Time (Typ): 4µs, 3.5µs (Max)
Turn On / Turn Off Time (Typ): 2µs, 3µs
Voltage - Output (Max): 70V
Supplier Device Package: 6-SMD
Current Transfer Ratio (Max): 125% @ 10mA
Vce Saturation (Max): 400mV
Current Transfer Ratio (Min): 63% @ 10mA
Voltage - Isolation: 4170Vrms
Current - Output / Channel: 50mA
Input Type: DC
Voltage - Forward (Vf) (Typ): 1.35V
Operating Temperature: -40°C ~ 100°C
Mounting Type: Surface Mount
Output Type: Transistor
Package / Case: 6-SMD, Gull Wing
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar
Mindestbestellmenge: 1000 Stücke
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CNY17F2SR2VM CNY17F4M-D.pdf
CNY17F2SR2VM
Hersteller: onsemi
Description: OPTOISO 4.17KV 1CH TRANS 6-SMD
Current - DC Forward (If) (Max): 60 mA
Number of Channels: 1
Part Status: Active
Rise / Fall Time (Typ): 4µs, 3.5µs (Max)
Turn On / Turn Off Time (Typ): 2µs, 3µs
Voltage - Output (Max): 70V
Supplier Device Package: 6-SMD
Current Transfer Ratio (Max): 125% @ 10mA
Vce Saturation (Max): 400mV
Current Transfer Ratio (Min): 63% @ 10mA
Voltage - Isolation: 4170Vrms
Current - Output / Channel: 50mA
Input Type: DC
Voltage - Forward (Vf) (Typ): 1.35V
Operating Temperature: -40°C ~ 100°C
Mounting Type: Surface Mount
Output Type: Transistor
Package / Case: 6-SMD, Gull Wing
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar
Mindestbestellmenge: 1000 Stücke
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CNY17F2TM cny17f4m-d.pdf
CNY17F2TM
Hersteller: onsemi
Description: OPTOISO 4.17KV 1CH TRANS 6-DIP
Mounting Type: Through Hole
Output Type: Transistor
Package / Case: 6-DIP (0.400", 10.16mm)
Packaging: Bulk
Current - DC Forward (If) (Max): 60 mA
Number of Channels: 1
Part Status: Obsolete
Rise / Fall Time (Typ): 4µs, 3.5µs (Max)
Turn On / Turn Off Time (Typ): 2µs, 3µs
Voltage - Output (Max): 70V
Supplier Device Package: 6-DIP
Current Transfer Ratio (Max): 125% @ 10mA
Vce Saturation (Max): 400mV
Current Transfer Ratio (Min): 63% @ 10mA
Voltage - Isolation: 4170Vrms
Current - Output / Channel: 50mA
Input Type: DC
Voltage - Forward (Vf) (Typ): 1.35V
Operating Temperature: -40°C ~ 100°C
Produkt ist nicht verfügbar
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CNY17F2TM_F132 cny17f4m-d.pdf
CNY17F2TM_F132
Hersteller: onsemi
Description: OPTOISO 4.17KV 1CH TRANS 6-DIP
Current - DC Forward (If) (Max): 60 mA
Number of Channels: 1
Part Status: Obsolete
Rise / Fall Time (Typ): 4µs, 3.5µs (Max)
Turn On / Turn Off Time (Typ): 2µs, 3µs
Voltage - Output (Max): 70V
Supplier Device Package: 6-DIP
Current Transfer Ratio (Max): 125% @ 10mA
Vce Saturation (Max): 400mV
Current Transfer Ratio (Min): 63% @ 10mA
Voltage - Isolation: 4170Vrms
Voltage - Forward (Vf) (Typ): 1.35V
Operating Temperature: -40°C ~ 100°C
Mounting Type: Through Hole
Output Type: Transistor
Package / Case: 6-DIP (0.400", 10.16mm)
Packaging: Bulk
Current - Output / Channel: 50mA
Input Type: DC
Produkt ist nicht verfügbar
Mindestbestellmenge: 1000 Stücke
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CNY17F2TVM CNY17F4M-D.pdf
CNY17F2TVM
Hersteller: onsemi
Description: OPTOISO 4.17KV 1CH TRANS 6-DIP
Packaging: Tube
Package / Case: 6-DIP (0.400", 10.16mm)
Output Type: Transistor
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 100°C
Voltage - Forward (Vf) (Typ): 1.35V
Input Type: DC
Current - Output / Channel: 50mA
Voltage - Isolation: 4170Vrms
Current Transfer Ratio (Min): 63% @ 10mA
Vce Saturation (Max): 400mV
Current Transfer Ratio (Max): 125% @ 10mA
Supplier Device Package: 6-DIP
Voltage - Output (Max): 70V
Turn On / Turn Off Time (Typ): 2µs, 3µs
Rise / Fall Time (Typ): 4µs, 3.5µs (Max)
Part Status: Active
Number of Channels: 1
Current - DC Forward (If) (Max): 60 mA
auf Bestellung 908 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
19+1.15 EUR
50+0.63 EUR
100+0.57 EUR
500+0.48 EUR
Mindestbestellmenge: 19 Stücke
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CNY17F2VM CNY17F4M-D.pdf
CNY17F2VM
Hersteller: onsemi
Description: OPTOISO 4.17KV 1CH TRANS 6-DIP
Current - DC Forward (If) (Max): 60 mA
Number of Channels: 1
Part Status: Active
Rise / Fall Time (Typ): 4µs, 3.5µs (Max)
Turn On / Turn Off Time (Typ): 2µs, 3µs
Voltage - Output (Max): 70V
Supplier Device Package: 6-DIP
Current Transfer Ratio (Max): 125% @ 10mA
Vce Saturation (Max): 400mV
Current Transfer Ratio (Min): 63% @ 10mA
Voltage - Isolation: 4170Vrms
Current - Output / Channel: 50mA
Input Type: DC
Voltage - Forward (Vf) (Typ): 1.35V
Operating Temperature: -40°C ~ 100°C
Mounting Type: Through Hole
Output Type: Transistor
Package / Case: 6-DIP (0.300", 7.62mm)
Packaging: Bulk
Produkt ist nicht verfügbar
Mindestbestellmenge: 1000 Stücke
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CNY17F3SM CNY17F4M-D.pdf
CNY17F3SM
Hersteller: onsemi
Description: OPTOISO 4.17KV 1CH TRANS 6-SMD
Current - DC Forward (If) (Max): 60 mA
Number of Channels: 1
Part Status: Active
Rise / Fall Time (Typ): 4µs, 3.5µs (Max)
Turn On / Turn Off Time (Typ): 2µs, 3µs
Voltage - Output (Max): 70V
Supplier Device Package: 6-SMD
Current Transfer Ratio (Max): 200% @ 10mA
Vce Saturation (Max): 400mV
Current Transfer Ratio (Min): 100% @ 10mA
Voltage - Isolation: 4170Vrms
Current - Output / Channel: 50mA
Input Type: DC
Voltage - Forward (Vf) (Typ): 1.35V
Operating Temperature: -40°C ~ 100°C
Mounting Type: Surface Mount
Output Type: Transistor
Package / Case: 6-SMD, Gull Wing
Packaging: Tube
auf Bestellung 4465 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
19+1.15 EUR
50+0.63 EUR
100+0.57 EUR
500+0.48 EUR
1000+0.44 EUR
2000+0.42 EUR
Mindestbestellmenge: 19 Stücke
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CNY17F3SR2M CNY17F4M-D.pdf
CNY17F3SR2M
Hersteller: onsemi
Description: OPTOISO 4.17KV 1CH TRANS 6-SMD
Input Type: DC
Voltage - Forward (Vf) (Typ): 1.35V
Operating Temperature: -40°C ~ 100°C
Mounting Type: Surface Mount
Output Type: Transistor
Package / Case: 6-SMD, Gull Wing
Packaging: Tape & Reel (TR)
Current - DC Forward (If) (Max): 60 mA
Number of Channels: 1
Part Status: Active
Rise / Fall Time (Typ): 4µs, 3.5µs (Max)
Turn On / Turn Off Time (Typ): 2µs, 3µs
Voltage - Output (Max): 70V
Supplier Device Package: 6-SMD
Current Transfer Ratio (Max): 200% @ 10mA
Vce Saturation (Max): 400mV
Current Transfer Ratio (Min): 100% @ 10mA
Voltage - Isolation: 4170Vrms
Current - Output / Channel: 50mA
auf Bestellung 1000 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
1000+0.51 EUR
Mindestbestellmenge: 1000 Stücke
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CNY17F3SR2M_F132 cny17f4m-d.pdf
CNY17F3SR2M_F132
Hersteller: onsemi
Description: OPTOISO 4.17KV 1CH TRANS 6-SMD
Current Transfer Ratio (Min): 100% @ 10mA
Voltage - Isolation: 4170Vrms
Current - Output / Channel: 50mA
Input Type: DC
Voltage - Forward (Vf) (Typ): 1.35V
Operating Temperature: -40°C ~ 100°C
Mounting Type: Surface Mount
Output Type: Transistor
Package / Case: 6-SMD, Gull Wing
Packaging: Tape & Reel (TR)
Current - DC Forward (If) (Max): 60 mA
Number of Channels: 1
Part Status: Obsolete
Rise / Fall Time (Typ): 4µs, 3.5µs (Max)
Turn On / Turn Off Time (Typ): 2µs, 3µs
Voltage - Output (Max): 70V
Supplier Device Package: 6-SMD
Current Transfer Ratio (Max): 200% @ 10mA
Vce Saturation (Max): 400mV
Produkt ist nicht verfügbar
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CNY17F3SR2VM CNY17F4M-D.pdf
CNY17F3SR2VM
Hersteller: onsemi
Description: OPTOISO 4.17KV 1CH TRANS 6-SMD
Packaging: Tape & Reel (TR)
Current - DC Forward (If) (Max): 60 mA
Number of Channels: 1
Part Status: Active
Rise / Fall Time (Typ): 4µs, 3.5µs (Max)
Turn On / Turn Off Time (Typ): 2µs, 3µs
Voltage - Output (Max): 70V
Supplier Device Package: 6-SMD
Current Transfer Ratio (Max): 200% @ 10mA
Vce Saturation (Max): 400mV
Current Transfer Ratio (Min): 100% @ 10mA
Voltage - Isolation: 4170Vrms
Current - Output / Channel: 50mA
Input Type: DC
Voltage - Forward (Vf) (Typ): 1.35V
Operating Temperature: -40°C ~ 100°C
Mounting Type: Surface Mount
Output Type: Transistor
Package / Case: 6-SMD, Gull Wing
auf Bestellung 56000 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
1000+0.51 EUR
2000+0.48 EUR
Mindestbestellmenge: 1000 Stücke
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CNY17F3SR2VM_F132 cny17f4m-d.pdf
CNY17F3SR2VM_F132
Hersteller: onsemi
Description: OPTOISO 4.17KV 1CH TRANS 6-SMD
Output Type: Transistor
Package / Case: 6-SMD, Gull Wing
Packaging: Tape & Reel (TR)
Current - DC Forward (If) (Max): 60 mA
Number of Channels: 1
Part Status: Obsolete
Rise / Fall Time (Typ): 4µs, 3.5µs (Max)
Turn On / Turn Off Time (Typ): 2µs, 3µs
Voltage - Output (Max): 70V
Supplier Device Package: 6-SMD
Current Transfer Ratio (Max): 200% @ 10mA
Vce Saturation (Max): 400mV
Current Transfer Ratio (Min): 100% @ 10mA
Voltage - Isolation: 4170Vrms
Current - Output / Channel: 50mA
Input Type: DC
Voltage - Forward (Vf) (Typ): 1.35V
Operating Temperature: -40°C ~ 100°C
Mounting Type: Surface Mount
Produkt ist nicht verfügbar
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CNY17F3SVM cny17f4m-d.pdf
CNY17F3SVM
Hersteller: onsemi
Description: OPTOISO 4.17KV 1CH TRANS 6-SMD
Current - DC Forward (If) (Max): 60 mA
Number of Channels: 1
Part Status: Obsolete
Rise / Fall Time (Typ): 4µs, 3.5µs (Max)
Turn On / Turn Off Time (Typ): 2µs, 3µs
Voltage - Output (Max): 70V
Supplier Device Package: 6-SMD
Current Transfer Ratio (Max): 200% @ 10mA
Vce Saturation (Max): 400mV
Current Transfer Ratio (Min): 100% @ 10mA
Voltage - Isolation: 4170Vrms
Current - Output / Channel: 50mA
Input Type: DC
Voltage - Forward (Vf) (Typ): 1.35V
Operating Temperature: -40°C ~ 100°C
Mounting Type: Surface Mount
Output Type: Transistor
Package / Case: 6-SMD, Gull Wing
Packaging: Bulk
Produkt ist nicht verfügbar
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CNY17F3TVM cny17f4m-d.pdf
CNY17F3TVM
Hersteller: onsemi
Description: OPTOISO 4.17KV 1CH TRANS 6-DIP
Vce Saturation (Max): 400mV
Current Transfer Ratio (Min): 100% @ 10mA
Voltage - Isolation: 4170Vrms
Current - Output / Channel: 50mA
Input Type: DC
Voltage - Forward (Vf) (Typ): 1.35V
Operating Temperature: -40°C ~ 100°C
Mounting Type: Through Hole
Output Type: Transistor
Package / Case: 6-DIP (0.400", 10.16mm)
Packaging: Tube
Current - DC Forward (If) (Max): 60 mA
Number of Channels: 1
Part Status: Active
Rise / Fall Time (Typ): 4µs, 3.5µs (Max)
Turn On / Turn Off Time (Typ): 2µs, 3µs
Voltage - Output (Max): 70V
Supplier Device Package: 6-DIP
Current Transfer Ratio (Max): 200% @ 10mA
auf Bestellung 24576 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
19+1.15 EUR
50+0.63 EUR
100+0.58 EUR
500+0.48 EUR
1000+0.45 EUR
2000+0.42 EUR
5000+0.39 EUR
10000+0.37 EUR
Mindestbestellmenge: 19 Stücke
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CNY17F4SR2VM_F132 cny17f4m-d.pdf
CNY17F4SR2VM_F132
Hersteller: onsemi
Description: OPTOISO 4.17KV 1CH TRANS 6-SMD
Packaging: Tape & Reel (TR)
Package / Case: 6-SMD, Gull Wing
Output Type: Transistor
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 100°C
Voltage - Forward (Vf) (Typ): 1.35V
Input Type: DC
Current - Output / Channel: 50mA
Voltage - Isolation: 4170Vrms
Current Transfer Ratio (Min): 160% @ 10mA
Vce Saturation (Max): 400mV
Current Transfer Ratio (Max): 320% @ 10mA
Supplier Device Package: 6-SMD
Voltage - Output (Max): 70V
Turn On / Turn Off Time (Typ): 2µs, 3µs
Rise / Fall Time (Typ): 4µs, 3.5µs (Max)
Number of Channels: 1
Current - DC Forward (If) (Max): 60 mA
Produkt ist nicht verfügbar
Mindestbestellmenge: 1000 Stücke
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D44H10TU TO220B03_Pkg_Dwg.pdf
D44H10TU
Hersteller: onsemi
Description: TRANS NPN 80V 8A TO220-3
Voltage - Collector Emitter Breakdown (Max): 80 V
Current - Collector (Ic) (Max): 8 A
Supplier Device Package: TO-220-3
Transistor Type: NPN
Mounting Type: Through Hole
Package / Case: TO-220-3
Packaging: Tube
Produkt ist nicht verfügbar
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FAN4800IM FAN4800.pdf
FAN4800IM
Hersteller: onsemi
Description: IC PFC CTLR CCM/DCM 84KHZ 16SOIC
Packaging: Tube
Package / Case: 16-SOIC (0.295", 7.50mm Width)
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 125°C
Voltage - Supply: 11V ~ 16.5V
Frequency - Switching: 66kHz ~ 84kHz
Mode: Continuous Conduction (CCM), Discontinuous Conduction (DCM)
Supplier Device Package: 16-SOIC
Part Status: Obsolete
Current - Startup: 100 µA
Produkt ist nicht verfügbar
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FAN5240QSC FAN5240.pdf
FAN5240QSC
Hersteller: onsemi
Description: IC REG CTRLR MULTIPH 1OUT 28QSOP
Part Status: Obsolete
Supplier Device Package: 28-QSOP
Applications: Controller, AMD Mobile Athlon™, Duron™
Operating Temperature: -10°C ~ 85°C
Voltage - Input: 6V ~ 24V
Number of Outputs: 1
Mounting Type: Surface Mount
Voltage - Output: 0.93V ~ 2V
Package / Case: 28-SSOP (0.154", 3.90mm Width)
Packaging: Tube
Produkt ist nicht verfügbar
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FAN7311BM FAN7311B.pdf
FAN7311BM
Hersteller: onsemi
Description: IC LCD BKLT INVERTER DRV 20SOIC
Part Status: Obsolete
Supplier Device Package: 20-SOIC
Applications: LCD TV/Monitor
Voltage - Supply: 5V ~ 25.5V
Operating Temperature: -25°C ~ 85°C
Mounting Type: Surface Mount
Package / Case: 20-SOIC (0.295", 7.50mm Width)
Packaging: Tube
Produkt ist nicht verfügbar
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FAN7311M FAN7311.pdf
FAN7311M
Hersteller: onsemi
Description: IC LCD BKLT INVERTER DRV 20SOIC
Part Status: Obsolete
Supplier Device Package: 20-SOIC
Applications: LCD TV/Monitor
Voltage - Supply: 5V ~ 25.5V
Operating Temperature: -25°C ~ 85°C
Mounting Type: Surface Mount
Package / Case: 20-SOIC (0.295", 7.50mm Width)
Packaging: Tube
Produkt ist nicht verfügbar
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FAN7382M1 fan7382-d.pdf
FAN7382M1
Hersteller: onsemi
Description: IC GATE DRVR HALF-BRIDGE 14SOP
Packaging: Tube
Package / Case: 14-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Voltage - Supply: 10V ~ 20V
Input Type: Non-Inverting
High Side Voltage - Max (Bootstrap): 600 V
Supplier Device Package: 14-SOP
Rise / Fall Time (Typ): 60ns, 30ns
Channel Type: Independent
Driven Configuration: Half-Bridge
Number of Drivers: 2
Gate Type: IGBT, MOSFET (N-Channel)
Logic Voltage - VIL, VIH: 0.8V, 2.5V
Current - Peak Output (Source, Sink): 350mA, 650mA
Part Status: Obsolete
DigiKey Programmable: Not Verified
Produkt ist nicht verfügbar
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FAN7384M fan7384-d.pdf
FAN7384M
Hersteller: onsemi
Description: IC GATE DRVR HALF-BRIDGE 14SOP
DigiKey Programmable: Not Verified
Part Status: Obsolete
Current - Peak Output (Source, Sink): 250mA, 500mA
Logic Voltage - VIL, VIH: 1.2V, 2.5V
Gate Type: IGBT, N-Channel MOSFET
Number of Drivers: 2
Driven Configuration: Half-Bridge
Channel Type: Independent
Rise / Fall Time (Typ): 50ns, 30ns
Supplier Device Package: 14-SOIC
High Side Voltage - Max (Bootstrap): 600 V
Input Type: Non-Inverting
Voltage - Supply: 13V ~ 20V
Operating Temperature: -40°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 14-SOIC (0.154", 3.90mm Width)
Packaging: Tube
Produkt ist nicht verfügbar
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FAN7387M fan7387-d.pdf
FAN7387M
Hersteller: onsemi
Description: IC BALLAST CNTRL 22KHZ 8SOP
Current - Supply: 800 µA
Part Status: Obsolete
Dimming: No
Supplier Device Package: 8-SOIC
Voltage - Supply: 11V ~ 14V
Operating Temperature: -40°C ~ 125°C
Type: Ballast Controller
Frequency: 18kHz ~ 22kHz
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Packaging: Tube
Produkt ist nicht verfügbar
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FAN7388M fan7388-d.pdf
FAN7388M
Hersteller: onsemi
Description: IC GATE DRVR HALF-BRIDGE 20SOIC
Part Status: Obsolete
Current - Peak Output (Source, Sink): 350mA, 650mA
Logic Voltage - VIL, VIH: 1V, 2.5V
Gate Type: IGBT, MOSFET (N-Channel)
Number of Drivers: 6
Driven Configuration: Half-Bridge
Channel Type: 3-Phase
Rise / Fall Time (Typ): 50ns, 30ns
Supplier Device Package: 20-SOIC
High Side Voltage - Max (Bootstrap): 600 V
Input Type: Non-Inverting
Voltage - Supply: 10V ~ 20V
Operating Temperature: -40°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 20-SOIC (0.295", 7.50mm Width)
Packaging: Tube
DigiKey Programmable: Not Verified
Produkt ist nicht verfügbar
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FAN7390M fan7390-d.pdf
FAN7390M
Hersteller: onsemi
Description: IC GATE DRVR HALF-BRIDGE 8SOIC
Operating Temperature: -40°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Packaging: Tube
DigiKey Programmable: Not Verified
Part Status: Obsolete
Current - Peak Output (Source, Sink): 4.5A, 4.5A
Logic Voltage - VIL, VIH: 1.2V, 2.5V
Gate Type: IGBT, N-Channel MOSFET
Number of Drivers: 2
Driven Configuration: Half-Bridge
Channel Type: Independent
Rise / Fall Time (Typ): 25ns, 20ns
Supplier Device Package: 8-SOIC
High Side Voltage - Max (Bootstrap): 600 V
Input Type: Non-Inverting
Voltage - Supply: 10V ~ 22V
Produkt ist nicht verfügbar
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FAN7390M1 fan7390-d.pdf
FAN7390M1
Hersteller: onsemi
Description: IC GATE DRVR HALF-BRIDGE 14SOP
DigiKey Programmable: Not Verified
Part Status: Obsolete
Current - Peak Output (Source, Sink): 4.5A, 4.5A
Logic Voltage - VIL, VIH: 1.2V, 2.5V
Gate Type: IGBT, N-Channel MOSFET
Number of Drivers: 2
Driven Configuration: Half-Bridge
Channel Type: Independent
Rise / Fall Time (Typ): 25ns, 20ns
Supplier Device Package: 14-SOP
High Side Voltage - Max (Bootstrap): 600 V
Input Type: Non-Inverting
Voltage - Supply: 10V ~ 22V
Operating Temperature: -40°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 14-SOIC (0.154", 3.90mm Width)
Packaging: Tube
Produkt ist nicht verfügbar
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FAN7602BM fan7602b-d.pdf
FAN7602BM
Hersteller: onsemi
Description: IC OFFLINE SWITCH FLYBACK 8SOIC
Packaging: Tube
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -25°C ~ 125°C (TA)
Duty Cycle: 75%
Frequency - Switching: 65kHz
Internal Switch(s): No
Output Isolation: Isolated
Topology: Flyback
Voltage - Supply (Vcc/Vdd): 8V ~ 20V
Supplier Device Package: 8-SOIC
Fault Protection: Over Load, Over Voltage
Voltage - Start Up: 12 V
Part Status: Obsolete
Power (Watts): 48 W
Produkt ist nicht verfügbar
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FAN7711M fan7711-d.pdf
FAN7711M
Hersteller: onsemi
Description: IC BALLAST CNTRL 57.3KHZ 8SOP
Current - Supply: 3.2 mA
Dimming: No
Supplier Device Package: 8-SOIC
Voltage - Supply: 12.4V ~ 15.2V
Operating Temperature: -25°C ~ 125°C
Type: Ballast Controller
Frequency: 48.7kHz ~ 57.3kHz
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Packaging: Tube
Produkt ist nicht verfügbar
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FAN7842M fan7842-d.pdf
FAN7842M
Hersteller: onsemi
Description: IC GATE DRVR HALF-BRIDGE 8SOIC
Packaging: Tube
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Voltage - Supply: 10V ~ 20V
Input Type: Non-Inverting
High Side Voltage - Max (Bootstrap): 200 V
Supplier Device Package: 8-SOIC
Rise / Fall Time (Typ): 60ns, 30ns
Channel Type: Independent
Driven Configuration: Half-Bridge
Number of Drivers: 2
Gate Type: IGBT, MOSFET (N-Channel)
Logic Voltage - VIL, VIH: 0.8V, 2.9V
Current - Peak Output (Source, Sink): 350mA, 650mA
Part Status: Obsolete
DigiKey Programmable: Not Verified
Produkt ist nicht verfügbar
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FAN7888M fan7888-d.pdf
FAN7888M
Hersteller: onsemi
Description: IC GATE DRVR HALF-BRIDGE 20SOIC
Packaging: Tube
Package / Case: 20-SOIC (0.295", 7.50mm Width)
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Voltage - Supply: 10V ~ 20V
Input Type: Non-Inverting
High Side Voltage - Max (Bootstrap): 200 V
Supplier Device Package: 20-SOIC
Rise / Fall Time (Typ): 50ns, 30ns
Channel Type: 3-Phase
Driven Configuration: Half-Bridge
Number of Drivers: 6
Gate Type: IGBT, MOSFET (N-Channel)
Logic Voltage - VIL, VIH: 1V, 2.5V
Current - Peak Output (Source, Sink): 350mA, 650mA
DigiKey Programmable: Not Verified
Produkt ist nicht verfügbar
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FCA16N60_F109 FCA16N60_F109.pdf
FCA16N60_F109
Hersteller: onsemi
Description: MOSFET N-CH 600V 16A TO3PN
Input Capacitance (Ciss) (Max) @ Vds: 2250 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 70 nC @ 10 V
Drain to Source Voltage (Vdss): 600 V
Vgs (Max): ±30V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Obsolete
Supplier Device Package: TO-3PN
Vgs(th) (Max) @ Id: 5V @ 250µA
Power Dissipation (Max): 167W (Tc)
Rds On (Max) @ Id, Vgs: 260mOhm @ 8A, 10V
Current - Continuous Drain (Id) @ 25°C: 16A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-3P-3, SC-65-3
Packaging: Tube
Produkt ist nicht verfügbar
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FCA47N60-F109 FCA47N60-F109-D.PDF
FCA47N60-F109
Hersteller: onsemi
Description: MOSFET N-CH 600V 47A TO3PN
Packaging: Tube
Package / Case: TO-3P-3, SC-65-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 47A (Tc)
Rds On (Max) @ Id, Vgs: 70mOhm @ 23.5A, 10V
Power Dissipation (Max): 417W (Tc)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: TO-3PN
Part Status: Not For New Designs
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 270 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 8000 pF @ 25 V
auf Bestellung 38 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
1+24.53 EUR
30+14.88 EUR
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FCPF20N60TYDTU fcp20n60-d.pdf
FCPF20N60TYDTU
Hersteller: onsemi
Description: MOSFET N-CH 600V 20A TO220F-3
Packaging: Tube
Package / Case: TO-220-3 Full Pack, Formed Leads
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 20A (Tc)
Rds On (Max) @ Id, Vgs: 190mOhm @ 10A, 10V
Power Dissipation (Max): 39W (Tc)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: TO-220F-3 (Y-Forming)
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 98 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3080 pF @ 25 V
Produkt ist nicht verfügbar
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FD70N20PWD
FD70N20PWD
Hersteller: onsemi
Description: MOSFET N-CH 200V 70A TO3P
Packaging: Tube
Drain to Source Voltage (Vdss): 200 V
Supplier Device Package: TO-3P
Current - Continuous Drain (Id) @ 25°C: 70A (Ta)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Mounting Type: Through Hole
Package / Case: TO-3P-3, SC-65-3
Produkt ist nicht verfügbar
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FDA20N50-F109 FDA20N50_F109-D.PDF
FDA20N50-F109
Hersteller: onsemi
Description: MOSFET N-CH 500V 22A TO3PN
Packaging: Tube
Package / Case: TO-3P-3, SC-65-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 22A (Tc)
Rds On (Max) @ Id, Vgs: 230mOhm @ 11A, 10V
Power Dissipation (Max): 280W (Tc)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: TO-3PN
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 500 V
Gate Charge (Qg) (Max) @ Vgs: 59.5 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3120 pF @ 25 V
Voltage Coupled to Gate Charge (Qg) (Max) @ Vgs: 10
Voltage Coupled to Input Capacitance (Ciss) (Max) @ Vds: 25
Produkt ist nicht verfügbar
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FDA59N25 fda59n25-d.pdf
FDA59N25
Hersteller: onsemi
Description: MOSFET N-CH 250V 59A TO3PN
Packaging: Tube
Package / Case: TO-3P-3, SC-65-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 59A (Tc)
Rds On (Max) @ Id, Vgs: 49mOhm @ 29.5A, 10V
Power Dissipation (Max): 392W (Tc)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: TO-3PN
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 250 V
Gate Charge (Qg) (Max) @ Vgs: 82 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4020 pF @ 25 V
auf Bestellung 307 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
3+8.21 EUR
30+4.56 EUR
120+3.76 EUR
Mindestbestellmenge: 3 Stücke
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FDA59N30 FDA59N30-D.pdf
FDA59N30
Hersteller: onsemi
Description: MOSFET N-CH 300V 59A TO3PN
Packaging: Tube
Package / Case: TO-3P-3, SC-65-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 59A (Tc)
Rds On (Max) @ Id, Vgs: 56mOhm @ 29.5A, 10V
Power Dissipation (Max): 500W (Tc)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: TO-3PN
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 300 V
Gate Charge (Qg) (Max) @ Vgs: 100 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4670 pF @ 25 V
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30+5.26 EUR
120+4.36 EUR
510+3.69 EUR
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FDA8440 FDA8440-D.pdf
FDA8440
Hersteller: onsemi
Description: MOSFET N-CH 40V 30A/100A TO3PN
Input Capacitance (Ciss) (Max) @ Vds: 24740 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 450 nC @ 10 V
Drain to Source Voltage (Vdss): 40 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Supplier Device Package: TO-3PN
Vgs(th) (Max) @ Id: 3V @ 250µA
Power Dissipation (Max): 306W (Tc)
Rds On (Max) @ Id, Vgs: 2.1mOhm @ 80A, 10V
Current - Continuous Drain (Id) @ 25°C: 30A (Ta), 100A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-3P-3, SC-65-3
Packaging: Tube
Produkt ist nicht verfügbar
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FDB12N50FTM-WS fdb12n50f-d.pdf
FDB12N50FTM-WS
Hersteller: onsemi
Description: MOSFET N-CH 500V 11.5A D2PAK
Input Capacitance (Ciss) (Max) @ Vds: 1395 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 30 nC @ 10 V
Drain to Source Voltage (Vdss): 500 V
Vgs (Max): ±30V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Obsolete
Supplier Device Package: TO-263 (D2Pak)
Vgs(th) (Max) @ Id: 5V @ 250µA
Power Dissipation (Max): 165W (Tc)
Rds On (Max) @ Id, Vgs: 700mOhm @ 6A, 10V
Current - Continuous Drain (Id) @ 25°C: 11.5A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Packaging: Tape & Reel (TR)
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FDB12N50UTM_WS
FDB12N50UTM_WS
Hersteller: onsemi
Description: MOSFET N-CH 500V 10A D2PAK
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Obsolete
Supplier Device Package: D²PAK (TO-263)
Vgs(th) (Max) @ Id: 5V @ 250µA
Power Dissipation (Max): 165W (Tc)
Rds On (Max) @ Id, Vgs: 800mOhm @ 5A, 10V
Current - Continuous Drain (Id) @ 25°C: 10A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Packaging: Tape & Reel (TR)
Input Capacitance (Ciss) (Max) @ Vds: 1395 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 30 nC @ 10 V
Drain to Source Voltage (Vdss): 500 V
Vgs (Max): ±30V
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FDB8441-F085 fdb8441_f085-d.pdf
FDB8441-F085
Hersteller: onsemi
Description: MOSFET N-CH 40V 28A/80A TO263AB
Qualification: AEC-Q101
Grade: Automotive
Input Capacitance (Ciss) (Max) @ Vds: 15000 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 280 nC @ 10 V
Drain to Source Voltage (Vdss): 40 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Obsolete
Supplier Device Package: TO-263 (D2Pak)
Vgs(th) (Max) @ Id: 4V @ 250µA
Power Dissipation (Max): 300W (Tc)
Rds On (Max) @ Id, Vgs: 2.5mOhm @ 80A, 10V
Current - Continuous Drain (Id) @ 25°C: 28A (Ta), 80A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar
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FDB8444TS FDB8444TS.pdf
FDB8444TS
Hersteller: onsemi
Description: MOSFET N-CH 40V 20A/70A TO263-5
Input Capacitance (Ciss) (Max) @ Vds: 8410 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 338 nC @ 20 V
Drain to Source Voltage (Vdss): 40 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Supplier Device Package: TO-263-5
Vgs(th) (Max) @ Id: 4V @ 250µA
Power Dissipation (Max): 181W (Tc)
Rds On (Max) @ Id, Vgs: 5mOhm @ 70A, 10V
Current - Continuous Drain (Id) @ 25°C: 20A (Ta), 70A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-263-6, D2PAK (5 Leads + Tab), TO-263BA
Packaging: Tape & Reel (TR)
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FDC2512_F095 fdc2512-d.pdf
FDC2512_F095
Hersteller: onsemi
Description: MOSFET N-CH 150V 1.4A SUPERSOT6
Input Capacitance (Ciss) (Max) @ Vds: 344 pF @ 75 V
Gate Charge (Qg) (Max) @ Vgs: 11 nC @ 10 V
Drain to Source Voltage (Vdss): 150 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Supplier Device Package: SuperSOT™-6
Vgs(th) (Max) @ Id: 4V @ 250µA
Power Dissipation (Max): 1.6W (Ta)
Rds On (Max) @ Id, Vgs: 425mOhm @ 1.4A, 10V
Current - Continuous Drain (Id) @ 25°C: 1.4A (Ta)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: SOT-23-6 Thin, TSOT-23-6
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar
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FDC2612_F095 fdc2612-d.pdf
FDC2612_F095
Hersteller: onsemi
Description: MOSFET N-CH 200V 1.1A SUPERSOT6
Input Capacitance (Ciss) (Max) @ Vds: 234 pF @ 100 V
Gate Charge (Qg) (Max) @ Vgs: 11 nC @ 10 V
Drain to Source Voltage (Vdss): 200 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Obsolete
Supplier Device Package: SuperSOT™-6
Vgs(th) (Max) @ Id: 4.5V @ 250µA
Power Dissipation (Max): 1.6W (Ta)
Rds On (Max) @ Id, Vgs: 725mOhm @ 1.1A, 10V
Current - Continuous Drain (Id) @ 25°C: 1.1A (Ta)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: SOT-23-6 Thin, TSOT-23-6
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar
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FDC3512_F095 fdc3512-d.pdf
FDC3512_F095
Hersteller: onsemi
Description: MOSFET N-CH 80V 3A SUPERSOT6
Produkt ist nicht verfügbar
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FDC5612_F095 fdc5612-d.pdf
FDC5612_F095
Hersteller: onsemi
Description: MOSFET N-CH 60V 4.3A SUPERSOT6
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: SOT-23-6 Thin, TSOT-23-6
Packaging: Tape & Reel (TR)
Input Capacitance (Ciss) (Max) @ Vds: 650 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 18 nC @ 10 V
Drain to Source Voltage (Vdss): 60 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Supplier Device Package: SuperSOT™-6
Vgs(th) (Max) @ Id: 4V @ 250µA
Power Dissipation (Max): 1.6W (Ta)
Rds On (Max) @ Id, Vgs: 55mOhm @ 4.3A, 10V
Current - Continuous Drain (Id) @ 25°C: 4.3A (Ta)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Produkt ist nicht verfügbar
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FDC6000NZ_F077 FDC6000NZ.pdf
Hersteller: onsemi
Description: MOSFET 2N-CH 20V 7.3A 6SSOT
Supplier Device Package: SuperSOT™-6 FLMP
Vgs(th) (Max) @ Id: 1.5V @ 250µA
FET Feature: Logic Level Gate
Gate Charge (Qg) (Max) @ Vgs: 11nC @ 4.5V
Rds On (Max) @ Id, Vgs: 20mOhm @ 6.5A, 4.5V
Input Capacitance (Ciss) (Max) @ Vds: 840pF @ 10V
Current - Continuous Drain (Id) @ 25°C: 7.3A
Drain to Source Voltage (Vdss): 20V
Power - Max: 1.2W
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Configuration: 2 N-Channel (Dual)
Mounting Type: Surface Mount
Package / Case: 6-SSOT Flat-lead, SuperSOT™-6 FLMP
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar
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FDC633N_F095 FDC633N.pdf
FDC633N_F095
Hersteller: onsemi
Description: MOSFET N-CH 30V 5.2A SUPERSOT6
Input Capacitance (Ciss) (Max) @ Vds: 538 pF @ 10 V
Gate Charge (Qg) (Max) @ Vgs: 16 nC @ 4.5 V
Drain to Source Voltage (Vdss): 30 V
Vgs (Max): ±8V
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
Part Status: Obsolete
Supplier Device Package: SuperSOT™-6
Vgs(th) (Max) @ Id: 1V @ 250µA
Power Dissipation (Max): 1.6W (Ta)
Rds On (Max) @ Id, Vgs: 42mOhm @ 5.2A, 4.5V
Current - Continuous Drain (Id) @ 25°C: 5.2A (Ta)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: SOT-23-6 Thin, TSOT-23-6
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar
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FDC640P_F095 fdc640p-d.pdf
FDC640P_F095
Hersteller: onsemi
Description: MOSFET P-CH 20V 4.5A SUPERSOT6
Input Capacitance (Ciss) (Max) @ Vds: 890 pF @ 10 V
Gate Charge (Qg) (Max) @ Vgs: 13 nC @ 4.5 V
Drain to Source Voltage (Vdss): 20 V
Vgs (Max): ±12V
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
Part Status: Obsolete
Supplier Device Package: SuperSOT™-6
Vgs(th) (Max) @ Id: 1.5V @ 250µA
Power Dissipation (Max): 1.6W (Ta)
Rds On (Max) @ Id, Vgs: 53mOhm @ 4.5A, 4.5V
Current - Continuous Drain (Id) @ 25°C: 4.5A (Ta)
FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: SOT-23-6 Thin, TSOT-23-6
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar
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FDC645N_F095 ONSM-S-A0003586841-1.pdf?t.download=true&u=5oefqw
FDC645N_F095
Hersteller: onsemi
Description: MOSFET N-CH 30V 5.5A SUPERSOT6
Packaging: Tape & Reel (TR)
Package / Case: SOT-23-6 Thin, TSOT-23-6
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 5.5A (Ta)
Rds On (Max) @ Id, Vgs: 26mOhm @ 6.2A, 10V
Power Dissipation (Max): 1.6W (Ta)
Vgs(th) (Max) @ Id: 2V @ 250µA
Supplier Device Package: SuperSOT™-6
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±12V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 21 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 1460 pF @ 15 V
Produkt ist nicht verfügbar
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FDC699P_F077 FDC699P.pdf
Hersteller: onsemi
Description: MOSFET P-CH 20V 7A SUPERSOT6
Packaging: Tape & Reel (TR)
Package / Case: 6-SSOT Flat-lead, SuperSOT™-6 FLMP
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 7A (Ta)
Rds On (Max) @ Id, Vgs: 22mOhm @ 7A, 4.5V
Power Dissipation (Max): 2W (Ta)
Vgs(th) (Max) @ Id: 1.5V @ 250µA
Supplier Device Package: SuperSOT™-6 FLMP
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
Vgs (Max): ±12V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 38 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 2640 pF @ 10 V
Produkt ist nicht verfügbar
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FDC796N_F077 FDC796N.pdf
Hersteller: onsemi
Description: MOSFET N-CH 30V 12.5A SUPERSOT6
Packaging: Tape & Reel (TR)
Package / Case: 6-SSOT Flat-lead, SuperSOT™-6 FLMP
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 12.5A (Ta)
Rds On (Max) @ Id, Vgs: 9mOhm @ 12.5A, 10V
Power Dissipation (Max): 2W (Ta)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: SuperSOT™-6 FLMP
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 20 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 1444 pF @ 15 V
Produkt ist nicht verfügbar
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FDD16AN08A0_NF054 FAIRS45904-1.pdf?t.download=true&u=5oefqw
FDD16AN08A0_NF054
Hersteller: onsemi
Description: MOSFET N-CH 75V 9A/50A DPAK
Input Capacitance (Ciss) (Max) @ Vds: 1874 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 47 nC @ 10 V
Drain to Source Voltage (Vdss): 75 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Part Status: Obsolete
Supplier Device Package: TO-252AA
Vgs(th) (Max) @ Id: 4V @ 250µA
Power Dissipation (Max): 135W (Tc)
Rds On (Max) @ Id, Vgs: 16mOhm @ 50A, 10V
Current - Continuous Drain (Id) @ 25°C: 9A (Ta), 50A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar
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FDD3682-F085 fdd3682_f085-d.pdf
FDD3682-F085
Hersteller: onsemi
Description: MOSFET N-CH 100V 5.5/32A TO252AA
Input Capacitance (Ciss) (Max) @ Vds: 1250 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 28 nC @ 10 V
Drain to Source Voltage (Vdss): 100 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Part Status: Obsolete
Supplier Device Package: TO-252AA
Vgs(th) (Max) @ Id: 4V @ 250µA
Power Dissipation (Max): 95W (Tc)
Rds On (Max) @ Id, Vgs: 36mOhm @ 32A, 10V
Current - Continuous Drain (Id) @ 25°C: 5.5A (Ta), 32A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Packaging: Tape & Reel (TR)
Qualification: AEC-Q101
Grade: Automotive
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