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FDMA420NZ | onsemi |
 Description: MOSFET N-CH 20V 5.7A 6MICROFETInput Capacitance (Ciss) (Max) @ Vds: 935 pF @ 10 V Gate Charge (Qg) (Max) @ Vgs: 12 nC @ 4.5 V Drain to Source Voltage (Vdss): 20 V Vgs (Max): ±12V Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V Supplier Device Package: 6-MicroFET (2x2) Vgs(th) (Max) @ Id: 1.5V @ 250µA Power Dissipation (Max): 2.4W (Ta) Rds On (Max) @ Id, Vgs: 30mOhm @ 5.7A, 4.5V Current - Continuous Drain (Id) @ 25°C: 5.7A (Ta) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 6-WDFN Exposed Pad Packaging: Cut Tape (CT) |
auf Bestellung 6250 Stücke: Lieferzeit 10-14 Tag (e) |
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FDMA430NZ | onsemi |
Description: MOSFET N-CH 30V 5A 6MICROFET Input Capacitance (Ciss) (Max) @ Vds: 800 pF @ 10 V Gate Charge (Qg) (Max) @ Vgs: 11 nC @ 4.5 V Drain to Source Voltage (Vdss): 30 V Vgs (Max): ±12V Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V Supplier Device Package: 6-MicroFET (2x2) Vgs(th) (Max) @ Id: 1.5V @ 250µA Power Dissipation (Max): 2.4W (Ta) Rds On (Max) @ Id, Vgs: 40mOhm @ 5A, 4.5V Current - Continuous Drain (Id) @ 25°C: 5A (Ta) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 6-WDFN Exposed Pad Packaging: Cut Tape (CT) |
auf Bestellung 33000 Stücke: Lieferzeit 10-14 Tag (e) |
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FDMB3800N | onsemi |
Description: MOSFET 2N-CH 30V 8MLP MICROFET Packaging: Cut Tape (CT) Package / Case: 8-PowerWDFN Mounting Type: Surface Mount Configuration: 2 N-Channel (Dual) Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 750mW Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 4.8A Input Capacitance (Ciss) (Max) @ Vds: 465pF @ 15V Rds On (Max) @ Id, Vgs: 40mOhm @ 4.8A, 10V Gate Charge (Qg) (Max) @ Vgs: 5.6nC @ 5V FET Feature: Logic Level Gate Vgs(th) (Max) @ Id: 3V @ 250µA Supplier Device Package: 8-MLP, MicroFET (3x1.9) Part Status: Active |
auf Bestellung 10662 Stücke: Lieferzeit 10-14 Tag (e) |
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FDS4897C | onsemi |
Description: MOSFET N/P-CH 40V 6.2A 8SOIC Supplier Device Package: 8-SOIC Vgs(th) (Max) @ Id: 3V @ 250µA FET Feature: Logic Level Gate Gate Charge (Qg) (Max) @ Vgs: 20nC @ 10V Rds On (Max) @ Id, Vgs: 29mOhm @ 6.2A, 10V Input Capacitance (Ciss) (Max) @ Vds: 760pF @ 20V Current - Continuous Drain (Id) @ 25°C: 6.2A, 4.4A Drain to Source Voltage (Vdss): 40V Power - Max: 900mW Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 150°C (TJ) Configuration: N and P-Channel Mounting Type: Surface Mount Package / Case: 8-SOIC (0.154", 3.90mm Width) Packaging: Cut Tape (CT) |
Produkt ist nicht verfügbar |
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FDS5692Z | onsemi |
Description: MOSFET N-CH 50V 5.8A 8SOIC Input Capacitance (Ciss) (Max) @ Vds: 1025 pF @ 25 V Gate Charge (Qg) (Max) @ Vgs: 25 nC @ 10 V Drain to Source Voltage (Vdss): 50 V Vgs (Max): ±20V Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Part Status: Obsolete Supplier Device Package: 8-SOIC Vgs(th) (Max) @ Id: 3V @ 250µA Power Dissipation (Max): 2.5W (Ta) Rds On (Max) @ Id, Vgs: 24mOhm @ 5.8A, 10V Current - Continuous Drain (Id) @ 25°C: 5.8A (Ta) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 8-SOIC (0.154", 3.90mm Width) Packaging: Cut Tape (CT) |
Produkt ist nicht verfügbar |
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FDS6673BZ | onsemi |
 Description: MOSFET P-CH 30V 14.5A 8SOICPackaging: Cut Tape (CT) Package / Case: 8-SOIC (0.154", 3.90mm Width) Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 14.5A (Ta) Rds On (Max) @ Id, Vgs: 7.8mOhm @ 14.5A, 10V Power Dissipation (Max): 2.5W (Ta) Vgs(th) (Max) @ Id: 3V @ 250µA Supplier Device Package: 8-SOIC Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±25V Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 124 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 4700 pF @ 15 V |
auf Bestellung 7810 Stücke: Lieferzeit 10-14 Tag (e) |
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FDS6675BZ | onsemi |
Description: MOSFET P-CH 30V 11A 8SOIC Packaging: Cut Tape (CT) Package / Case: 8-SOIC (0.154", 3.90mm Width) Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 11A (Ta) Rds On (Max) @ Id, Vgs: 13mOhm @ 11A, 10V Power Dissipation (Max): 2.5W (Ta) Vgs(th) (Max) @ Id: 3V @ 250µA Supplier Device Package: 8-SOIC Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±25V Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 62 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 2470 pF @ 15 V |
auf Bestellung 9002 Stücke: Lieferzeit 10-14 Tag (e) |
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FDS8690 | onsemi |
Description: MOSFET N-CH 30V 14A 8SOIC Input Capacitance (Ciss) (Max) @ Vds: 1680 pF @ 15 V Gate Charge (Qg) (Max) @ Vgs: 27 nC @ 10 V Drain to Source Voltage (Vdss): 30 V Vgs (Max): ±20V Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Part Status: Obsolete Supplier Device Package: 8-SOIC Vgs(th) (Max) @ Id: 3V @ 250µA Power Dissipation (Max): 2.5W (Ta) Rds On (Max) @ Id, Vgs: 7.6mOhm @ 14A, 10V Current - Continuous Drain (Id) @ 25°C: 14A (Ta) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 8-SOIC (0.154", 3.90mm Width) Packaging: Cut Tape (CT) |
auf Bestellung 334 Stücke: Lieferzeit 10-14 Tag (e) |
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FDY100PZ | onsemi |
Description: MOSFET P-CH 20V 350MA SC89-3 Input Capacitance (Ciss) (Max) @ Vds: 100 pF @ 10 V Gate Charge (Qg) (Max) @ Vgs: 1.4 nC @ 4.5 V Drain to Source Voltage (Vdss): 20 V Vgs (Max): ±8V Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V Part Status: Last Time Buy Supplier Device Package: SC-89-3 Vgs(th) (Max) @ Id: 1.5V @ 250µA Power Dissipation (Max): 625mW (Ta) Rds On (Max) @ Id, Vgs: 1.2Ohm @ 350mA, 4.5V Current - Continuous Drain (Id) @ 25°C: 350mA (Ta) FET Type: P-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: SC-89, SOT-490 Packaging: Cut Tape (CT) |
auf Bestellung 13462 Stücke: Lieferzeit 10-14 Tag (e) |
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FDY101PZ | onsemi |
Description: MOSFET P-CH 20V 150MA SC89-3 Input Capacitance (Ciss) (Max) @ Vds: 100 pF @ 10 V Gate Charge (Qg) (Max) @ Vgs: 1.4 nC @ 4.5 V Drain to Source Voltage (Vdss): 20 V Vgs (Max): ±8V Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4.5V Part Status: Active Supplier Device Package: SC-89-3 Vgs(th) (Max) @ Id: 1.5V @ 250µA Power Dissipation (Max): 625mW (Ta) Rds On (Max) @ Id, Vgs: 8Ohm @ 150mA, 4.5V Current - Continuous Drain (Id) @ 25°C: 150mA (Ta) FET Type: P-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: SC-89, SOT-490 Packaging: Cut Tape (CT) |
auf Bestellung 877 Stücke: Lieferzeit 10-14 Tag (e) |
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FDY3000NZ | onsemi |
Description: MOSFET 2N-CH 20V 600MA SOT563F Supplier Device Package: SOT-563F Vgs(th) (Max) @ Id: 1.3V @ 250µA FET Feature: Logic Level Gate Gate Charge (Qg) (Max) @ Vgs: 1.1nC @ 4.5V Rds On (Max) @ Id, Vgs: 700mOhm @ 600mA, 4.5V Input Capacitance (Ciss) (Max) @ Vds: 60pF @ 10V Current - Continuous Drain (Id) @ 25°C: 600mA Drain to Source Voltage (Vdss): 20V Power - Max: 446mW Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 150°C (TJ) Configuration: 2 N-Channel (Dual) Mounting Type: Surface Mount Package / Case: SOT-563, SOT-666 Packaging: Cut Tape (CT) |
auf Bestellung 1499 Stücke: Lieferzeit 10-14 Tag (e) |
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FDY300NZ | onsemi |
Description: MOSFET N-CH 20V 600MA SC89-3 |
Produkt ist nicht verfügbar |
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FDY301NZ | onsemi |
Description: MOSFET N-CH 20V 200MA SC89-3 FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: SC-89, SOT-490 Packaging: Cut Tape (CT) Input Capacitance (Ciss) (Max) @ Vds: 60 pF @ 10 V Gate Charge (Qg) (Max) @ Vgs: 1.1 nC @ 4.5 V Drain to Source Voltage (Vdss): 20 V Vgs (Max): ±12V Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4.5V Part Status: Last Time Buy Supplier Device Package: SC-89-3 Vgs(th) (Max) @ Id: 1.5V @ 250µA Power Dissipation (Max): 625mW (Ta) Rds On (Max) @ Id, Vgs: 5Ohm @ 200mA, 4.5V Current - Continuous Drain (Id) @ 25°C: 200mA (Ta) |
auf Bestellung 4759 Stücke: Lieferzeit 10-14 Tag (e) |
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FFB20UP20STM | onsemi |
Description: DIODE GEN PURP 200V 20A D2PAK Current - Reverse Leakage @ Vr: 100 µA @ 200 V Voltage - Forward (Vf) (Max) @ If: 1.15 V @ 20 A Voltage - DC Reverse (Vr) (Max): 200 V Part Status: Last Time Buy Operating Temperature - Junction: -65°C ~ 150°C Supplier Device Package: TO-263 (D2Pak) Current - Average Rectified (Io): 20A Technology: Standard Reverse Recovery Time (trr): 45 ns Speed: Fast Recovery =< 500ns, > 200mA (Io) Mounting Type: Surface Mount Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Packaging: Cut Tape (CT) |
Produkt ist nicht verfügbar |
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FOD3180SDV | onsemi |
Description: OPTOISO 5KV 1CH GATE DVR 8SMD Packaging: Cut Tape (CT) Package / Case: 8-SMD, Gull Wing Mounting Type: Surface Mount Operating Temperature: -40°C ~ 100°C Voltage - Forward (Vf) (Typ): 1.43V Current - Peak Output: 2.5A Technology: Optical Coupling Current - Output High, Low: 2A, 2A Voltage - Isolation: 5000Vrms Approval Agency: cUL, UL, VDE Supplier Device Package: 8-SMD Rise / Fall Time (Typ): 75ns, 55ns Common Mode Transient Immunity (Min): 15kV/µs Propagation Delay tpLH / tpHL (Max): 200ns, 200ns Pulse Width Distortion (Max): 65ns Part Status: Active Number of Channels: 1 Current - DC Forward (If) (Max): 25 mA Voltage - Output Supply: 10V ~ 20V |
auf Bestellung 546 Stücke: Lieferzeit 10-14 Tag (e) |
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FOD420SD | onsemi |
Description: OPTOISOLATOR 5KV TRIAC 6DIP SMD Current - DC Forward (If) (Max): 30 mA Voltage - Off State: 600 V Number of Channels: 1 Part Status: Active Current - LED Trigger (Ift) (Max): 2mA Static dV/dt (Min): 10kV/µs Zero Crossing Circuit: No Supplier Device Package: 6-SMD Turn On Time: 60µs Current - Hold (Ih): 500µA Approval Agency: cUL, FIMKO, UL Voltage - Isolation: 5000Vrms Voltage - Forward (Vf) (Typ): 1.28V Operating Temperature: -55°C ~ 100°C Mounting Type: Surface Mount Output Type: Triac Package / Case: 6-SMD, Gull Wing Packaging: Cut Tape (CT) |
auf Bestellung 5145 Stücke: Lieferzeit 10-14 Tag (e) |
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FODM3063R2 | onsemi |
Description: OPTOISOLTR 3.75KV TRIAC 1CH 4SMD Current - DC Forward (If) (Max): 60 mA Voltage - Off State: 600 V Current - On State (It (RMS)) (Max): 70 mA Number of Channels: 1 Part Status: Active Current - LED Trigger (Ift) (Max): 5mA Static dV/dt (Min): 600V/µs Zero Crossing Circuit: Yes Supplier Device Package: 4-SMD Current - Hold (Ih): 300µA (Typ) Approval Agency: cUL, UL Voltage - Isolation: 3750Vrms Voltage - Forward (Vf) (Typ): 1.5V (Max) Operating Temperature: -40°C ~ 100°C Mounting Type: Surface Mount Output Type: Triac Package / Case: 4-SMD, Gull Wing Packaging: Cut Tape (CT) |
auf Bestellung 35789 Stücke: Lieferzeit 10-14 Tag (e) |
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FPF2125 | onsemi |
Description: IC PWR SWITCH P-CHAN 1:1 SOT23-5 Fault Protection: Current Limiting (Adjustable), Over Temperature, Reverse Current, UVLO Supplier Device Package: SOT-23-5 Ratio - Input:Output: 1:1 Current - Output (Max): 1.5A Packaging: Cut Tape (CT) Mounting Type: Surface Mount Output Type: P-Channel Package / Case: SC-74A, SOT-753 Part Status: Obsolete Voltage - Supply (Vcc/Vdd): Not Required Voltage - Load: 1.8V ~ 5.5V Input Type: Non-Inverting Rds On (Typ): 125mOhm Output Configuration: High Side Operating Temperature: -40°C ~ 85°C (TA) Switch Type: General Purpose Interface: On/Off Number of Outputs: 1 |
Produkt ist nicht verfügbar |
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FQN1N50CTA | onsemi |
Description: MOSFET N-CH 500V 380MA TO92-3 Input Capacitance (Ciss) (Max) @ Vds: 195 pF @ 25 V Gate Charge (Qg) (Max) @ Vgs: 6.4 nC @ 10 V Drain to Source Voltage (Vdss): 500 V Vgs (Max): ±30V Drive Voltage (Max Rds On, Min Rds On): 10V Part Status: Active Supplier Device Package: TO-92-3 Vgs(th) (Max) @ Id: 4V @ 250µA Power Dissipation (Max): 890mW (Ta), 2.08W (Tc) Rds On (Max) @ Id, Vgs: 6Ohm @ 190mA, 10V Current - Continuous Drain (Id) @ 25°C: 380mA (Tc) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Package / Case: TO-226-3, TO-92-3 (TO-226AA) Formed Leads Packaging: Cut Tape (CT) |
auf Bestellung 139 Stücke: Lieferzeit 10-14 Tag (e) |
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FQT1N60CTF-WS | onsemi |
Description: MOSFET N-CH 600V 200MA SOT223-4 Input Capacitance (Ciss) (Max) @ Vds: 170 pF @ 25 V Gate Charge (Qg) (Max) @ Vgs: 6.2 nC @ 10 V Drain to Source Voltage (Vdss): 600 V Vgs (Max): ±30V Drive Voltage (Max Rds On, Min Rds On): 10V Part Status: Active Supplier Device Package: SOT-223-4 Vgs(th) (Max) @ Id: 4V @ 250µA Power Dissipation (Max): 2.1W (Tc) Rds On (Max) @ Id, Vgs: 11.5Ohm @ 100mA, 10V Current - Continuous Drain (Id) @ 25°C: 200mA (Tc) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: TO-261-4, TO-261AA Packaging: Cut Tape (CT) |
auf Bestellung 11111 Stücke: Lieferzeit 10-14 Tag (e) |
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ISL9V5045S3ST | onsemi |
Description: IGBT 480V 51A TO263AB Power - Max: 300 W Voltage - Collector Emitter Breakdown (Max): 480 V Current - Collector (Ic) (Max): 51 A Part Status: Obsolete Gate Charge: 32 nC Test Condition: 300V, 1kOhm, 5V Td (on/off) @ 25°C: -/10.8µs Supplier Device Package: D²PAK (TO-263) Vce(on) (Max) @ Vge, Ic: 1.6V @ 4V, 10A Input Type: Logic Operating Temperature: -40°C ~ 175°C (TJ) Mounting Type: Surface Mount Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB Packaging: Cut Tape (CT) |
Produkt ist nicht verfügbar |
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MOC8050SR2VM | onsemi |
Description: OPTOISOLTR 4.17KV 1CH DARL 6-SMD Packaging: Cut Tape (CT) Package / Case: 6-SMD, Gull Wing Output Type: Darlington Mounting Type: Surface Mount Operating Temperature: -40°C ~ 100°C Voltage - Forward (Vf) (Typ): 1.18V Input Type: DC Current - Output / Channel: 150mA Voltage - Isolation: 4170Vrms Current Transfer Ratio (Min): 500% @ 10mA Supplier Device Package: 6-SMD Voltage - Output (Max): 80V Turn On / Turn Off Time (Typ): 8.5µs, 95µs Part Status: Active Number of Channels: 1 Current - DC Forward (If) (Max): 60 mA |
auf Bestellung 1455 Stücke: Lieferzeit 10-14 Tag (e) |
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| CAT4101TV-T75 | onsemi |
Description: IC LED DRVR LIN PWM 1A D2PAK-5 Packaging: Tape & Reel (TR) Package / Case: TO-263-6, D2PAK (5 Leads + Tab), TO-263BA Voltage - Output: 25V Mounting Type: Surface Mount Number of Outputs: 1 Type: Linear Operating Temperature: -40°C ~ 85°C (TA) Applications: Lighting Current - Output / Channel: 1A Internal Switch(s): Yes Supplier Device Package: TO-263 (D2Pak) Dimming: PWM Voltage - Supply (Min): 3V Voltage - Supply (Max): 5.5V |
Produkt ist nicht verfügbar |
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CAT4101TV-T75 | onsemi |
Description: IC LED DRVR LIN PWM 1A D2PAK-5 Packaging: Cut Tape (CT) Package / Case: TO-263-6, D²Pak (5 Leads + Tab), TO-263BA Voltage - Output: 25V Mounting Type: Surface Mount Number of Outputs: 1 Type: Linear Operating Temperature: -40°C ~ 85°C (TA) Applications: Lighting Current - Output / Channel: 1A Internal Switch(s): Yes Supplier Device Package: D²PAK-5 (TO-263-5) Dimming: PWM Voltage - Supply (Min): 3V Voltage - Supply (Max): 5.5V |
Produkt ist nicht verfügbar |
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FDB047N10 | onsemi |
Description: MOSFET N-CH 100V 120A D2PAK Input Capacitance (Ciss) (Max) @ Vds: 15265 pF @ 25 V Gate Charge (Qg) (Max) @ Vgs: 210 nC @ 10 V Drain to Source Voltage (Vdss): 100 V Vgs (Max): ±20V Drive Voltage (Max Rds On, Min Rds On): 10V Part Status: Active Supplier Device Package: TO-263 (D2Pak) Vgs(th) (Max) @ Id: 4.5V @ 250µA Power Dissipation (Max): 375W (Tc) Rds On (Max) @ Id, Vgs: 4.7mOhm @ 75A, 10V Current - Continuous Drain (Id) @ 25°C: 120A (Tc) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Packaging: Tape & Reel (TR) |
auf Bestellung 1600 Stücke: Lieferzeit 10-14 Tag (e) |
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FDMS8880 | onsemi |
Description: MOSFET N-CH 30V 13.5A/21A 8PQFN Input Capacitance (Ciss) (Max) @ Vds: 1585 pF @ 15 V Gate Charge (Qg) (Max) @ Vgs: 33 nC @ 10 V Drain to Source Voltage (Vdss): 30 V Vgs (Max): ±20V Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Supplier Device Package: 8-PQFN (5x6) Vgs(th) (Max) @ Id: 2.5V @ 250µA Power Dissipation (Max): 2.5W (Ta), 42W (Tc) Rds On (Max) @ Id, Vgs: 8.5mOhm @ 13.5A, 10V Current - Continuous Drain (Id) @ 25°C: 13.5A (Ta), 21A (Tc) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 8-PowerTDFN Packaging: Tape & Reel (TR) |
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FFPF08S60SNTU | onsemi |
Description: DIODE GEN PURP 600V 8A TO220F-2L Current - Reverse Leakage @ Vr: 100 µA @ 600 V Voltage - Forward (Vf) (Max) @ If: 3.4 V @ 8 A Voltage - DC Reverse (Vr) (Max): 600 V Part Status: Obsolete Operating Temperature - Junction: -65°C ~ 150°C Supplier Device Package: TO-220F-2L Current - Average Rectified (Io): 8A Technology: Avalanche Reverse Recovery Time (trr): 25 ns Speed: Fast Recovery =< 500ns, > 200mA (Io) Mounting Type: Through Hole Package / Case: TO-220-2 Full Pack Packaging: Tube |
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FOD410 | onsemi |
Description: OPTOISOLATOR 5KV TRIAC 6DIP Current - DC Forward (If) (Max): 30 mA Voltage - Off State: 600 V Number of Channels: 1 Part Status: Active Current - LED Trigger (Ift) (Max): 2mA Static dV/dt (Min): 10kV/µs Zero Crossing Circuit: Yes Supplier Device Package: 6-DIP Turn On Time: 60µs Current - Hold (Ih): 500µA Approval Agency: CSA, UL Voltage - Isolation: 5000Vrms Voltage - Forward (Vf) (Typ): 1.25V Operating Temperature: -55°C ~ 100°C Mounting Type: Through Hole Output Type: Triac Package / Case: 6-DIP (0.300", 7.62mm) Packaging: Tube |
auf Bestellung 1825 Stücke: Lieferzeit 10-14 Tag (e) |
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FOD4108 | onsemi |
Description: OPTOISOLATOR 5KV TRIAC 6DIP Current - DC Forward (If) (Max): 30 mA Voltage - Off State: 800 V Number of Channels: 1 Part Status: Active Current - LED Trigger (Ift) (Max): 2mA Static dV/dt (Min): 10kV/µs Zero Crossing Circuit: Yes Supplier Device Package: 6-DIP Turn On Time: 60µs Current - Hold (Ih): 500µA Approval Agency: CSA, UL Voltage - Isolation: 5000Vrms Voltage - Forward (Vf) (Typ): 1.25V Operating Temperature: -55°C ~ 100°C Mounting Type: Through Hole Output Type: Triac Package / Case: 6-DIP (0.300", 7.62mm) Packaging: Tube |
auf Bestellung 19142 Stücke: Lieferzeit 10-14 Tag (e) |
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FPF1003A | onsemi |
Description: IC PWR SWITCH P-CHAN 1:1 6WLCSP Supplier Device Package: 6-WLCSP (0.96x1.66) Ratio - Input:Output: 1:1 Current - Output (Max): 2A Voltage - Supply (Vcc/Vdd): Not Required Voltage - Load: 1.2V ~ 5.5V Input Type: Non-Inverting Rds On (Typ): 20mOhm Output Configuration: High Side Operating Temperature: -40°C ~ 85°C (TA) Switch Type: General Purpose Interface: On/Off Number of Outputs: 1 Mounting Type: Surface Mount Output Type: P-Channel Package / Case: 6-UFBGA, WLCSP Features: Slew Rate Controlled Packaging: Tape & Reel (TR) |
auf Bestellung 3000 Stücke: Lieferzeit 10-14 Tag (e) |
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FSA642UMX | onsemi |
Description: IC SWITCH 3PDT 24UMLP Packaging: Tape & Reel (TR) Package / Case: 24-UFQFN Mounting Type: Surface Mount Operating Temperature: -40°C ~ 85°C (TA) Applications: MIPI On-State Resistance (Max): 14Ohm -3db Bandwidth: 1GHz Supplier Device Package: 24-UMLP (3.4x2.5) Voltage - Supply, Single (V+): 2.65V ~ 4.3V Switch Circuit: 3PDT Part Status: Obsolete Number of Channels: 1 |
Produkt ist nicht verfügbar |
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FDB047N10 | onsemi |
Description: MOSFET N-CH 100V 120A D2PAK Input Capacitance (Ciss) (Max) @ Vds: 15265 pF @ 25 V Gate Charge (Qg) (Max) @ Vgs: 210 nC @ 10 V Drain to Source Voltage (Vdss): 100 V Vgs (Max): ±20V Drive Voltage (Max Rds On, Min Rds On): 10V Part Status: Active Supplier Device Package: TO-263 (D2Pak) Vgs(th) (Max) @ Id: 4.5V @ 250µA Power Dissipation (Max): 375W (Tc) Rds On (Max) @ Id, Vgs: 4.7mOhm @ 75A, 10V Current - Continuous Drain (Id) @ 25°C: 120A (Tc) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Packaging: Cut Tape (CT) |
auf Bestellung 1990 Stücke: Lieferzeit 10-14 Tag (e) |
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FDMS8880 | onsemi |
Description: MOSFET N-CH 30V 13.5A/21A 8PQFN Input Capacitance (Ciss) (Max) @ Vds: 1585 pF @ 15 V Gate Charge (Qg) (Max) @ Vgs: 33 nC @ 10 V Drain to Source Voltage (Vdss): 30 V Vgs (Max): ±20V Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Supplier Device Package: 8-PQFN (5x6) Vgs(th) (Max) @ Id: 2.5V @ 250µA Power Dissipation (Max): 2.5W (Ta), 42W (Tc) Rds On (Max) @ Id, Vgs: 8.5mOhm @ 13.5A, 10V Current - Continuous Drain (Id) @ 25°C: 13.5A (Ta), 21A (Tc) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 8-PowerTDFN Packaging: Cut Tape (CT) |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||||
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FPF1003A | onsemi |
Description: IC PWR SWITCH P-CHAN 1:1 6WLCSP Supplier Device Package: 6-WLCSP (0.96x1.66) Ratio - Input:Output: 1:1 Current - Output (Max): 2A Voltage - Supply (Vcc/Vdd): Not Required Voltage - Load: 1.2V ~ 5.5V Input Type: Non-Inverting Rds On (Typ): 20mOhm Output Configuration: High Side Operating Temperature: -40°C ~ 85°C (TA) Switch Type: General Purpose Interface: On/Off Number of Outputs: 1 Mounting Type: Surface Mount Output Type: P-Channel Package / Case: 6-UFBGA, WLCSP Features: Slew Rate Controlled Packaging: Cut Tape (CT) |
auf Bestellung 4802 Stücke: Lieferzeit 10-14 Tag (e) |
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FDA24N50 | onsemi |
Description: MOSFET N-CH 500V 24A TO3PN Packaging: Tube Package / Case: TO-3P-3, SC-65-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 24A (Tc) Rds On (Max) @ Id, Vgs: 190mOhm @ 12A, 10V Power Dissipation (Max): 270W (Tc) Vgs(th) (Max) @ Id: 5V @ 250µA Supplier Device Package: TO-3PN Part Status: Obsolete Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±30V Drain to Source Voltage (Vdss): 500 V Gate Charge (Qg) (Max) @ Vgs: 85 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 4150 pF @ 25 V |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||||
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FDA28N50 | onsemi |
Description: MOSFET N-CH 500V 28A TO3PN Packaging: Tube Package / Case: TO-3P-3, SC-65-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 28A (Tc) Rds On (Max) @ Id, Vgs: 155mOhm @ 14A, 10V Power Dissipation (Max): 310W (Tc) Vgs(th) (Max) @ Id: 5V @ 250µA Supplier Device Package: TO-3PN Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±30V Drain to Source Voltage (Vdss): 500 V Gate Charge (Qg) (Max) @ Vgs: 105 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 5140 pF @ 25 V |
auf Bestellung 291 Stücke: Lieferzeit 10-14 Tag (e) |
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FGH60N60SFDTU | onsemi |
Description: IGBT FIELD STOP 600V 120A TO-247 Packaging: Tube Package / Case: TO-247-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Input Type: Standard Reverse Recovery Time (trr): 47 ns Vce(on) (Max) @ Vge, Ic: 2.9V @ 15V, 60A Supplier Device Package: TO-247-3 IGBT Type: Field Stop Td (on/off) @ 25°C: 22ns/134ns Switching Energy: 1.79mJ (on), 670µJ (off) Test Condition: 400V, 60A, 5Ohm, 15V Gate Charge: 198 nC Part Status: Obsolete Current - Collector (Ic) (Max): 120 A Voltage - Collector Emitter Breakdown (Max): 600 V Current - Collector Pulsed (Icm): 180 A Power - Max: 378 W |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 450 Stücke Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||||
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FGH60N60UFDTU | onsemi |
Description: IGBT FIELD STOP 600V 120A TO-247 Packaging: Tube Package / Case: TO-247-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Input Type: Standard Reverse Recovery Time (trr): 47 ns Vce(on) (Max) @ Vge, Ic: 2.4V @ 15V, 60A Supplier Device Package: TO-247-3 IGBT Type: Field Stop Td (on/off) @ 25°C: 23ns/130ns Switching Energy: 1.81mJ (on), 810µJ (off) Test Condition: 400V, 60A, 5Ohm, 15V Gate Charge: 188 nC Part Status: Obsolete Current - Collector (Ic) (Max): 120 A Voltage - Collector Emitter Breakdown (Max): 600 V Current - Collector Pulsed (Icm): 180 A Power - Max: 298 W |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 450 Stücke Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||||
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FSUSB104UMX | onsemi |
Description: IC USB SWITCH DUAL DPDT 10UMLP Number of Channels: 1 Switch Circuit: DPDT Voltage - Supply, Single (V+): 3V ~ 4.4V Supplier Device Package: 10-UMLP (1.8x1.4) -3db Bandwidth: 720MHz On-State Resistance (Max): 6.5Ohm Applications: USB Operating Temperature: -40°C ~ 85°C (TA) Mounting Type: Surface Mount Package / Case: 10-UFQFN Features: Bi-Directional, USB 2.0 Packaging: Tape & Reel (TR) |
auf Bestellung 5000 Stücke: Lieferzeit 10-14 Tag (e) |
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SG6521SZ | onsemi |
Description: IC SUPERVISOR 4 CHANNEL 16SOP |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||||
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FSUSB104UMX | onsemi |
Description: IC USB SWITCH DUAL DPDT 10UMLP Number of Channels: 1 Switch Circuit: DPDT Voltage - Supply, Single (V+): 3V ~ 4.4V Supplier Device Package: 10-UMLP (1.8x1.4) -3db Bandwidth: 720MHz On-State Resistance (Max): 6.5Ohm Applications: USB Operating Temperature: -40°C ~ 85°C (TA) Mounting Type: Surface Mount Package / Case: 10-UFQFN Features: Bi-Directional, USB 2.0 Packaging: Cut Tape (CT) |
auf Bestellung 13767 Stücke: Lieferzeit 10-14 Tag (e) |
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SG6521SZ | onsemi |
Description: IC SUPERVISOR 4 CHANNEL 16SOP |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||||
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1N4002_NL | onsemi |
Description: DIODE STANDARD 100V 1A DO41 Packaging: Tape & Reel (TR) Package / Case: DO-204AL, DO-41, Axial Mounting Type: Through Hole Speed: Standard Recovery >500ns, > 200mA (Io) Technology: Standard Capacitance @ Vr, F: 15pF @ 4V, 1MHz Current - Average Rectified (Io): 1A Supplier Device Package: DO-41 Operating Temperature - Junction: -55°C ~ 175°C Part Status: Obsolete Voltage - DC Reverse (Vr) (Max): 100 V Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 1 A Current - Reverse Leakage @ Vr: 10 µA @ 100 V |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 25000 Stücke Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||||
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1N4004_NL | onsemi |
Description: DIODE STANDARD 400V 1A DO41 Packaging: Tape & Reel (TR) Package / Case: DO-204AL, DO-41, Axial Mounting Type: Through Hole Speed: Standard Recovery >500ns, > 200mA (Io) Technology: Standard Capacitance @ Vr, F: 15pF @ 4V, 1MHz Current - Average Rectified (Io): 1A Supplier Device Package: DO-41 Operating Temperature - Junction: -55°C ~ 175°C Part Status: Obsolete Voltage - DC Reverse (Vr) (Max): 400 V Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 1 A Current - Reverse Leakage @ Vr: 10 µA @ 400 V Current Coupled to Voltage - Forward (Vf) (Max) @ If: 1 Voltage Coupled to Current - Reverse Leakage @ Vr: 400 |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 25000 Stücke Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||||
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1N4448WT | onsemi |
Description: DIODE STANDARD 75V 200MA SOD523F Packaging: Tape & Reel (TR) Package / Case: SC-79, SOD-523F Mounting Type: Surface Mount Speed: Small Signal =< 200mA (Io), Any Speed Reverse Recovery Time (trr): 4 ns Technology: Standard Capacitance @ Vr, F: 4pF @ 0V, 1MHz Current - Average Rectified (Io): 200mA Supplier Device Package: SOD-523F Operating Temperature - Junction: -55°C ~ 150°C Part Status: Active Voltage - DC Reverse (Vr) (Max): 75 V Voltage - Forward (Vf) (Max) @ If: 1 V @ 100 mA Current - Reverse Leakage @ Vr: 5 µA @ 75 V |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 8000 Stücke Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||||
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1N5231C | onsemi |
Description: DIODE ZENER 5.1V 500MW DO35 Packaging: Bulk Current - Reverse Leakage @ Vr: 5 µA @ 2 V Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 200 mA Power - Max: 500 mW Part Status: Active Supplier Device Package: DO-35 Impedance (Max) (Zzt): 17 Ohms Voltage - Zener (Nom) (Vz): 5.1 V Operating Temperature: -65°C ~ 200°C Mounting Type: Through Hole Package / Case: DO-204AH, DO-35, Axial Tolerance: ±2% |
auf Bestellung 2741 Stücke: Lieferzeit 10-14 Tag (e) |
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1N5231CTR | onsemi |
Description: DIODE ZENER 5.1V 500MW DO35 Current - Reverse Leakage @ Vr: 5 µA @ 2 V Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 200 mA Power - Max: 500 mW Impedance (Max) (Zzt): 17 Ohms Voltage - Zener (Nom) (Vz): 5.1 V Operating Temperature: -65°C ~ 200°C Mounting Type: Through Hole Package / Case: DO-204AH, DO-35, Axial Tolerance: ±2% Packaging: Tape & Reel (TR) Part Status: Active Supplier Device Package: DO-35 |
auf Bestellung 85000 Stücke: Lieferzeit 10-14 Tag (e) |
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1N914BWT | onsemi |
Description: DIODE STANDARD 75V 200MA SOD523F Packaging: Tape & Reel (TR) Package / Case: SC-79, SOD-523F Mounting Type: Surface Mount Speed: Small Signal =< 200mA (Io), Any Speed Reverse Recovery Time (trr): 4 ns Technology: Standard Capacitance @ Vr, F: 4pF @ 0V, 1MHz Current - Average Rectified (Io): 200mA Supplier Device Package: SOD-523F Operating Temperature - Junction: -55°C ~ 150°C Part Status: Active Voltage - DC Reverse (Vr) (Max): 75 V Voltage - Forward (Vf) (Max) @ If: 1 V @ 100 mA Current - Reverse Leakage @ Vr: 5 µA @ 75 V |
auf Bestellung 248000 Stücke: Lieferzeit 10-14 Tag (e) |
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2N5245_J35Z | onsemi |
Description: RF MOSFET JFET 30V TO92-3 Voltage - Rated: 30 V Part Status: Obsolete Supplier Device Package: TO-92-3 Technology: JFET Configuration: N-Channel Mounting Type: Through Hole Current Rating (Amps): 15mA Package / Case: TO-226-3, TO-92-3 (TO-226AA) Formed Leads Packaging: Bulk |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||||
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2N5246_J35Z | onsemi |
Description: RF MOSFET JFET 30V TO92-3 Voltage - Rated: 30 V Supplier Device Package: TO-92-3 Technology: JFET Configuration: N-Channel Mounting Type: Through Hole Current Rating (Amps): 7mA Package / Case: TO-226-3, TO-92-3 (TO-226AA) Formed Leads Packaging: Bulk |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||||
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2N5247_J35Z | onsemi |
Description: RF MOSFET JFET 30V TO92-3 Voltage - Rated: 30 V Supplier Device Package: TO-92-3 Noise Figure: 4dB Technology: JFET Configuration: N-Channel Frequency: 400MHz Mounting Type: Through Hole Package / Case: TO-226-3, TO-92-3 (TO-226AA) Formed Leads Packaging: Bulk |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||||
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2N5950_J35Z | onsemi |
Description: RF MOSFET JFET 30V TO92-3 Voltage - Rated: 30 V Part Status: Obsolete Supplier Device Package: TO-92-3 Configuration: N-Channel Mounting Type: Through Hole Current Rating (Amps): 15mA Package / Case: TO-226-3, TO-92-3 (TO-226AA) Formed Leads Packaging: Bulk Technology: JFET |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 2000 Stücke Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||||
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2N5951_J35Z | onsemi |
Description: RF MOSFET JFET 15V TO92-3 Voltage - Test: 15 V Voltage - Rated: 30 V Part Status: Obsolete Supplier Device Package: TO-92-3 Noise Figure: 2dB Technology: JFET Configuration: N-Channel Frequency: 1kHz Mounting Type: Through Hole Current Rating (Amps): 13mA Package / Case: TO-226-3, TO-92-3 (TO-226AA) Formed Leads Packaging: Bulk |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 2000 Stücke Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||||
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2N5952_J35Z | onsemi |
Description: RF MOSFET JFET 15V TO92-3 Voltage - Test: 15 V Voltage - Rated: 30 V Part Status: Obsolete Supplier Device Package: TO-92-3 Configuration: N-Channel Frequency: 1kHz Mounting Type: Through Hole Current Rating (Amps): 8mA Package / Case: TO-226-3, TO-92-3 (TO-226AA) Formed Leads Packaging: Bulk Noise Figure: 2dB Technology: JFET |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||||
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2N5953_J35Z | onsemi |
Description: RF MOSFET JFET 15V TO92-3 Configuration: N-Channel Frequency: 1kHz Mounting Type: Through Hole Current Rating (Amps): 5mA Package / Case: TO-226-3, TO-92-3 (TO-226AA) Formed Leads Packaging: Bulk Voltage - Test: 15 V Voltage - Rated: 30 V Part Status: Obsolete Supplier Device Package: TO-92-3 Noise Figure: 2dB Technology: JFET |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 2000 Stücke Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||||
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2N7002_NB9G002 | onsemi |
Description: MOSFET N-CH 60V 115MA SOT-23 Input Capacitance (Ciss) (Max) @ Vds: 50 pF @ 25 V Drain to Source Voltage (Vdss): 60 V Vgs (Max): ±20V Drive Voltage (Max Rds On, Min Rds On): 5V, 10V Part Status: Obsolete Supplier Device Package: SOT-23-3 Vgs(th) (Max) @ Id: 2.5V @ 250µA Power Dissipation (Max): 200mW (Ta) Rds On (Max) @ Id, Vgs: 7.5Ohm @ 500mA, 10V Current - Continuous Drain (Id) @ 25°C: 115mA (Ta) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: TO-236-3, SC-59, SOT-23-3 Packaging: Tape & Reel (TR) |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||||
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4N26M_F132 | onsemi |
Description: OPTOISO 4.17KV TRANS W/BASE 6DIP Packaging: Bulk Package / Case: 6-DIP (0.300", 7.62mm) Output Type: Transistor with Base Mounting Type: Through Hole Operating Temperature: -40°C ~ 100°C Voltage - Forward (Vf) (Typ): 1.18V Input Type: DC Voltage - Isolation: 4170Vrms Current Transfer Ratio (Min): 20% @ 10mA Vce Saturation (Max): 500mV Supplier Device Package: 6-DIP Voltage - Output (Max): 30V Turn On / Turn Off Time (Typ): 2µs, 2µs Part Status: Obsolete Number of Channels: 1 Current - DC Forward (If) (Max): 60 mA |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 1000 Stücke Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||||
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4N32SVM | onsemi |
Description: OPTOISO 4.17KV DARL W/BASE 6SMD Vce Saturation (Max): 1V Current Transfer Ratio (Min): 500% @ 10mA Voltage - Isolation: 4170Vrms Current - Output / Channel: 150mA Input Type: DC Voltage - Forward (Vf) (Typ): 1.2V Operating Temperature: -40°C ~ 100°C Mounting Type: Surface Mount Output Type: Darlington with Base Package / Case: 6-SMD, Gull Wing Packaging: Bulk Current - DC Forward (If) (Max): 80 mA Number of Channels: 1 Part Status: Obsolete Turn On / Turn Off Time (Typ): 5µs, 100µs (Max) Voltage - Output (Max): 30V Supplier Device Package: 6-SMD |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||||
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4N33TVM | onsemi |
Description: OPTOISO 4.17KV DARL W/BASE 6-DIP Packaging: Tube Package / Case: 6-DIP (0.400", 10.16mm) Output Type: Darlington with Base Mounting Type: Through Hole Operating Temperature: -40°C ~ 100°C Voltage - Forward (Vf) (Typ): 1.2V Input Type: DC Current - Output / Channel: 150mA Voltage - Isolation: 4170Vrms Current Transfer Ratio (Min): 500% @ 10mA Vce Saturation (Max): 1V Supplier Device Package: 6-DIP Voltage - Output (Max): 30V Turn On / Turn Off Time (Typ): 5µs, 100µs (Max) Part Status: Active Number of Channels: 1 Current - DC Forward (If) (Max): 80 mA |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||||
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4N35M_F132 | onsemi |
Description: OPTOISO 4.17KV TRANS W/BASE 6DIP Packaging: Bulk Package / Case: 6-DIP (0.300", 7.62mm) Output Type: Transistor with Base Mounting Type: Through Hole Operating Temperature: -40°C ~ 100°C Voltage - Forward (Vf) (Typ): 1.18V Input Type: DC Voltage - Isolation: 4170Vrms Current Transfer Ratio (Min): 100% @ 10mA Vce Saturation (Max): 300mV Supplier Device Package: 6-DIP Voltage - Output (Max): 30V Turn On / Turn Off Time (Typ): 2µs, 2µs Part Status: Obsolete Number of Channels: 1 Current - DC Forward (If) (Max): 60 mA |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 1000 Stücke Im Einkaufswagen Stück im Wert von UAH |
| FDMA420NZ |
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Hersteller: onsemi
Description: MOSFET N-CH 20V 5.7A 6MICROFET
Input Capacitance (Ciss) (Max) @ Vds: 935 pF @ 10 V
Gate Charge (Qg) (Max) @ Vgs: 12 nC @ 4.5 V
Drain to Source Voltage (Vdss): 20 V
Vgs (Max): ±12V
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
Supplier Device Package: 6-MicroFET (2x2)
Vgs(th) (Max) @ Id: 1.5V @ 250µA
Power Dissipation (Max): 2.4W (Ta)
Rds On (Max) @ Id, Vgs: 30mOhm @ 5.7A, 4.5V
Current - Continuous Drain (Id) @ 25°C: 5.7A (Ta)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 6-WDFN Exposed Pad
Packaging: Cut Tape (CT)
Description: MOSFET N-CH 20V 5.7A 6MICROFET
Input Capacitance (Ciss) (Max) @ Vds: 935 pF @ 10 V
Gate Charge (Qg) (Max) @ Vgs: 12 nC @ 4.5 V
Drain to Source Voltage (Vdss): 20 V
Vgs (Max): ±12V
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
Supplier Device Package: 6-MicroFET (2x2)
Vgs(th) (Max) @ Id: 1.5V @ 250µA
Power Dissipation (Max): 2.4W (Ta)
Rds On (Max) @ Id, Vgs: 30mOhm @ 5.7A, 4.5V
Current - Continuous Drain (Id) @ 25°C: 5.7A (Ta)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 6-WDFN Exposed Pad
Packaging: Cut Tape (CT)
auf Bestellung 6250 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 15+ | 1.21 EUR |
| 22+ | 0.83 EUR |
| 100+ | 0.57 EUR |
| 500+ | 0.47 EUR |
| 1000+ | 0.42 EUR |
| FDMA430NZ |
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Hersteller: onsemi
Description: MOSFET N-CH 30V 5A 6MICROFET
Input Capacitance (Ciss) (Max) @ Vds: 800 pF @ 10 V
Gate Charge (Qg) (Max) @ Vgs: 11 nC @ 4.5 V
Drain to Source Voltage (Vdss): 30 V
Vgs (Max): ±12V
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
Supplier Device Package: 6-MicroFET (2x2)
Vgs(th) (Max) @ Id: 1.5V @ 250µA
Power Dissipation (Max): 2.4W (Ta)
Rds On (Max) @ Id, Vgs: 40mOhm @ 5A, 4.5V
Current - Continuous Drain (Id) @ 25°C: 5A (Ta)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 6-WDFN Exposed Pad
Packaging: Cut Tape (CT)
Description: MOSFET N-CH 30V 5A 6MICROFET
Input Capacitance (Ciss) (Max) @ Vds: 800 pF @ 10 V
Gate Charge (Qg) (Max) @ Vgs: 11 nC @ 4.5 V
Drain to Source Voltage (Vdss): 30 V
Vgs (Max): ±12V
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
Supplier Device Package: 6-MicroFET (2x2)
Vgs(th) (Max) @ Id: 1.5V @ 250µA
Power Dissipation (Max): 2.4W (Ta)
Rds On (Max) @ Id, Vgs: 40mOhm @ 5A, 4.5V
Current - Continuous Drain (Id) @ 25°C: 5A (Ta)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 6-WDFN Exposed Pad
Packaging: Cut Tape (CT)
auf Bestellung 33000 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 12+ | 1.53 EUR |
| 19+ | 0.96 EUR |
| 100+ | 0.62 EUR |
| 500+ | 0.48 EUR |
| 1000+ | 0.43 EUR |
| FDMB3800N |
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Hersteller: onsemi
Description: MOSFET 2N-CH 30V 8MLP MICROFET
Packaging: Cut Tape (CT)
Package / Case: 8-PowerWDFN
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 750mW
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 4.8A
Input Capacitance (Ciss) (Max) @ Vds: 465pF @ 15V
Rds On (Max) @ Id, Vgs: 40mOhm @ 4.8A, 10V
Gate Charge (Qg) (Max) @ Vgs: 5.6nC @ 5V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: 8-MLP, MicroFET (3x1.9)
Part Status: Active
Description: MOSFET 2N-CH 30V 8MLP MICROFET
Packaging: Cut Tape (CT)
Package / Case: 8-PowerWDFN
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 750mW
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 4.8A
Input Capacitance (Ciss) (Max) @ Vds: 465pF @ 15V
Rds On (Max) @ Id, Vgs: 40mOhm @ 4.8A, 10V
Gate Charge (Qg) (Max) @ Vgs: 5.6nC @ 5V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: 8-MLP, MicroFET (3x1.9)
Part Status: Active
auf Bestellung 10662 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 8+ | 2.27 EUR |
| 13+ | 1.43 EUR |
| 100+ | 0.96 EUR |
| 500+ | 0.75 EUR |
| 1000+ | 0.68 EUR |
| FDS4897C |
|
Hersteller: onsemi
Description: MOSFET N/P-CH 40V 6.2A 8SOIC
Supplier Device Package: 8-SOIC
Vgs(th) (Max) @ Id: 3V @ 250µA
FET Feature: Logic Level Gate
Gate Charge (Qg) (Max) @ Vgs: 20nC @ 10V
Rds On (Max) @ Id, Vgs: 29mOhm @ 6.2A, 10V
Input Capacitance (Ciss) (Max) @ Vds: 760pF @ 20V
Current - Continuous Drain (Id) @ 25°C: 6.2A, 4.4A
Drain to Source Voltage (Vdss): 40V
Power - Max: 900mW
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Configuration: N and P-Channel
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Packaging: Cut Tape (CT)
Description: MOSFET N/P-CH 40V 6.2A 8SOIC
Supplier Device Package: 8-SOIC
Vgs(th) (Max) @ Id: 3V @ 250µA
FET Feature: Logic Level Gate
Gate Charge (Qg) (Max) @ Vgs: 20nC @ 10V
Rds On (Max) @ Id, Vgs: 29mOhm @ 6.2A, 10V
Input Capacitance (Ciss) (Max) @ Vds: 760pF @ 20V
Current - Continuous Drain (Id) @ 25°C: 6.2A, 4.4A
Drain to Source Voltage (Vdss): 40V
Power - Max: 900mW
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Configuration: N and P-Channel
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Packaging: Cut Tape (CT)
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| FDS5692Z |
|
Hersteller: onsemi
Description: MOSFET N-CH 50V 5.8A 8SOIC
Input Capacitance (Ciss) (Max) @ Vds: 1025 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 25 nC @ 10 V
Drain to Source Voltage (Vdss): 50 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Part Status: Obsolete
Supplier Device Package: 8-SOIC
Vgs(th) (Max) @ Id: 3V @ 250µA
Power Dissipation (Max): 2.5W (Ta)
Rds On (Max) @ Id, Vgs: 24mOhm @ 5.8A, 10V
Current - Continuous Drain (Id) @ 25°C: 5.8A (Ta)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Packaging: Cut Tape (CT)
Description: MOSFET N-CH 50V 5.8A 8SOIC
Input Capacitance (Ciss) (Max) @ Vds: 1025 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 25 nC @ 10 V
Drain to Source Voltage (Vdss): 50 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Part Status: Obsolete
Supplier Device Package: 8-SOIC
Vgs(th) (Max) @ Id: 3V @ 250µA
Power Dissipation (Max): 2.5W (Ta)
Rds On (Max) @ Id, Vgs: 24mOhm @ 5.8A, 10V
Current - Continuous Drain (Id) @ 25°C: 5.8A (Ta)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Packaging: Cut Tape (CT)
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| FDS6673BZ |
|
Hersteller: onsemi
Description: MOSFET P-CH 30V 14.5A 8SOIC
Packaging: Cut Tape (CT)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 14.5A (Ta)
Rds On (Max) @ Id, Vgs: 7.8mOhm @ 14.5A, 10V
Power Dissipation (Max): 2.5W (Ta)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: 8-SOIC
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±25V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 124 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4700 pF @ 15 V
Description: MOSFET P-CH 30V 14.5A 8SOIC
Packaging: Cut Tape (CT)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 14.5A (Ta)
Rds On (Max) @ Id, Vgs: 7.8mOhm @ 14.5A, 10V
Power Dissipation (Max): 2.5W (Ta)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: 8-SOIC
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±25V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 124 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4700 pF @ 15 V
auf Bestellung 7810 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 7+ | 2.66 EUR |
| 11+ | 1.69 EUR |
| 100+ | 1.13 EUR |
| 500+ | 0.89 EUR |
| 1000+ | 0.81 EUR |
| FDS6675BZ |
|
Hersteller: onsemi
Description: MOSFET P-CH 30V 11A 8SOIC
Packaging: Cut Tape (CT)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 11A (Ta)
Rds On (Max) @ Id, Vgs: 13mOhm @ 11A, 10V
Power Dissipation (Max): 2.5W (Ta)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: 8-SOIC
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±25V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 62 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2470 pF @ 15 V
Description: MOSFET P-CH 30V 11A 8SOIC
Packaging: Cut Tape (CT)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 11A (Ta)
Rds On (Max) @ Id, Vgs: 13mOhm @ 11A, 10V
Power Dissipation (Max): 2.5W (Ta)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: 8-SOIC
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±25V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 62 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2470 pF @ 15 V
auf Bestellung 9002 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 9+ | 2.13 EUR |
| 14+ | 1.34 EUR |
| 100+ | 0.89 EUR |
| 500+ | 0.69 EUR |
| 1000+ | 0.63 EUR |
| FDS8690 |
|
Hersteller: onsemi
Description: MOSFET N-CH 30V 14A 8SOIC
Input Capacitance (Ciss) (Max) @ Vds: 1680 pF @ 15 V
Gate Charge (Qg) (Max) @ Vgs: 27 nC @ 10 V
Drain to Source Voltage (Vdss): 30 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Part Status: Obsolete
Supplier Device Package: 8-SOIC
Vgs(th) (Max) @ Id: 3V @ 250µA
Power Dissipation (Max): 2.5W (Ta)
Rds On (Max) @ Id, Vgs: 7.6mOhm @ 14A, 10V
Current - Continuous Drain (Id) @ 25°C: 14A (Ta)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Packaging: Cut Tape (CT)
Description: MOSFET N-CH 30V 14A 8SOIC
Input Capacitance (Ciss) (Max) @ Vds: 1680 pF @ 15 V
Gate Charge (Qg) (Max) @ Vgs: 27 nC @ 10 V
Drain to Source Voltage (Vdss): 30 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Part Status: Obsolete
Supplier Device Package: 8-SOIC
Vgs(th) (Max) @ Id: 3V @ 250µA
Power Dissipation (Max): 2.5W (Ta)
Rds On (Max) @ Id, Vgs: 7.6mOhm @ 14A, 10V
Current - Continuous Drain (Id) @ 25°C: 14A (Ta)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Packaging: Cut Tape (CT)
auf Bestellung 334 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 7+ | 2.6 EUR |
| 10+ | 2.34 EUR |
| 100+ | 1.82 EUR |
| FDY100PZ |
|
Hersteller: onsemi
Description: MOSFET P-CH 20V 350MA SC89-3
Input Capacitance (Ciss) (Max) @ Vds: 100 pF @ 10 V
Gate Charge (Qg) (Max) @ Vgs: 1.4 nC @ 4.5 V
Drain to Source Voltage (Vdss): 20 V
Vgs (Max): ±8V
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
Part Status: Last Time Buy
Supplier Device Package: SC-89-3
Vgs(th) (Max) @ Id: 1.5V @ 250µA
Power Dissipation (Max): 625mW (Ta)
Rds On (Max) @ Id, Vgs: 1.2Ohm @ 350mA, 4.5V
Current - Continuous Drain (Id) @ 25°C: 350mA (Ta)
FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: SC-89, SOT-490
Packaging: Cut Tape (CT)
Description: MOSFET P-CH 20V 350MA SC89-3
Input Capacitance (Ciss) (Max) @ Vds: 100 pF @ 10 V
Gate Charge (Qg) (Max) @ Vgs: 1.4 nC @ 4.5 V
Drain to Source Voltage (Vdss): 20 V
Vgs (Max): ±8V
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
Part Status: Last Time Buy
Supplier Device Package: SC-89-3
Vgs(th) (Max) @ Id: 1.5V @ 250µA
Power Dissipation (Max): 625mW (Ta)
Rds On (Max) @ Id, Vgs: 1.2Ohm @ 350mA, 4.5V
Current - Continuous Drain (Id) @ 25°C: 350mA (Ta)
FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: SC-89, SOT-490
Packaging: Cut Tape (CT)
auf Bestellung 13462 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 27+ | 0.67 EUR |
| 31+ | 0.57 EUR |
| 100+ | 0.4 EUR |
| 500+ | 0.31 EUR |
| 1000+ | 0.25 EUR |
| FDY101PZ |
|
Hersteller: onsemi
Description: MOSFET P-CH 20V 150MA SC89-3
Input Capacitance (Ciss) (Max) @ Vds: 100 pF @ 10 V
Gate Charge (Qg) (Max) @ Vgs: 1.4 nC @ 4.5 V
Drain to Source Voltage (Vdss): 20 V
Vgs (Max): ±8V
Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4.5V
Part Status: Active
Supplier Device Package: SC-89-3
Vgs(th) (Max) @ Id: 1.5V @ 250µA
Power Dissipation (Max): 625mW (Ta)
Rds On (Max) @ Id, Vgs: 8Ohm @ 150mA, 4.5V
Current - Continuous Drain (Id) @ 25°C: 150mA (Ta)
FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: SC-89, SOT-490
Packaging: Cut Tape (CT)
Description: MOSFET P-CH 20V 150MA SC89-3
Input Capacitance (Ciss) (Max) @ Vds: 100 pF @ 10 V
Gate Charge (Qg) (Max) @ Vgs: 1.4 nC @ 4.5 V
Drain to Source Voltage (Vdss): 20 V
Vgs (Max): ±8V
Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4.5V
Part Status: Active
Supplier Device Package: SC-89-3
Vgs(th) (Max) @ Id: 1.5V @ 250µA
Power Dissipation (Max): 625mW (Ta)
Rds On (Max) @ Id, Vgs: 8Ohm @ 150mA, 4.5V
Current - Continuous Drain (Id) @ 25°C: 150mA (Ta)
FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: SC-89, SOT-490
Packaging: Cut Tape (CT)
auf Bestellung 877 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 22+ | 0.83 EUR |
| 27+ | 0.68 EUR |
| 100+ | 0.46 EUR |
| 500+ | 0.35 EUR |
| FDY3000NZ |
|
Hersteller: onsemi
Description: MOSFET 2N-CH 20V 600MA SOT563F
Supplier Device Package: SOT-563F
Vgs(th) (Max) @ Id: 1.3V @ 250µA
FET Feature: Logic Level Gate
Gate Charge (Qg) (Max) @ Vgs: 1.1nC @ 4.5V
Rds On (Max) @ Id, Vgs: 700mOhm @ 600mA, 4.5V
Input Capacitance (Ciss) (Max) @ Vds: 60pF @ 10V
Current - Continuous Drain (Id) @ 25°C: 600mA
Drain to Source Voltage (Vdss): 20V
Power - Max: 446mW
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Configuration: 2 N-Channel (Dual)
Mounting Type: Surface Mount
Package / Case: SOT-563, SOT-666
Packaging: Cut Tape (CT)
Description: MOSFET 2N-CH 20V 600MA SOT563F
Supplier Device Package: SOT-563F
Vgs(th) (Max) @ Id: 1.3V @ 250µA
FET Feature: Logic Level Gate
Gate Charge (Qg) (Max) @ Vgs: 1.1nC @ 4.5V
Rds On (Max) @ Id, Vgs: 700mOhm @ 600mA, 4.5V
Input Capacitance (Ciss) (Max) @ Vds: 60pF @ 10V
Current - Continuous Drain (Id) @ 25°C: 600mA
Drain to Source Voltage (Vdss): 20V
Power - Max: 446mW
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Configuration: 2 N-Channel (Dual)
Mounting Type: Surface Mount
Package / Case: SOT-563, SOT-666
Packaging: Cut Tape (CT)
auf Bestellung 1499 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 28+ | 0.63 EUR |
| 32+ | 0.55 EUR |
| 100+ | 0.38 EUR |
| 500+ | 0.3 EUR |
| 1000+ | 0.24 EUR |
| FDY300NZ |
|
Hersteller: onsemi
Description: MOSFET N-CH 20V 600MA SC89-3
Description: MOSFET N-CH 20V 600MA SC89-3
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| FDY301NZ |
|
Hersteller: onsemi
Description: MOSFET N-CH 20V 200MA SC89-3
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: SC-89, SOT-490
Packaging: Cut Tape (CT)
Input Capacitance (Ciss) (Max) @ Vds: 60 pF @ 10 V
Gate Charge (Qg) (Max) @ Vgs: 1.1 nC @ 4.5 V
Drain to Source Voltage (Vdss): 20 V
Vgs (Max): ±12V
Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4.5V
Part Status: Last Time Buy
Supplier Device Package: SC-89-3
Vgs(th) (Max) @ Id: 1.5V @ 250µA
Power Dissipation (Max): 625mW (Ta)
Rds On (Max) @ Id, Vgs: 5Ohm @ 200mA, 4.5V
Current - Continuous Drain (Id) @ 25°C: 200mA (Ta)
Description: MOSFET N-CH 20V 200MA SC89-3
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: SC-89, SOT-490
Packaging: Cut Tape (CT)
Input Capacitance (Ciss) (Max) @ Vds: 60 pF @ 10 V
Gate Charge (Qg) (Max) @ Vgs: 1.1 nC @ 4.5 V
Drain to Source Voltage (Vdss): 20 V
Vgs (Max): ±12V
Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4.5V
Part Status: Last Time Buy
Supplier Device Package: SC-89-3
Vgs(th) (Max) @ Id: 1.5V @ 250µA
Power Dissipation (Max): 625mW (Ta)
Rds On (Max) @ Id, Vgs: 5Ohm @ 200mA, 4.5V
Current - Continuous Drain (Id) @ 25°C: 200mA (Ta)
auf Bestellung 4759 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 22+ | 0.83 EUR |
| 29+ | 0.62 EUR |
| 100+ | 0.39 EUR |
| 500+ | 0.26 EUR |
| 1000+ | 0.2 EUR |
| FFB20UP20STM |
|
Hersteller: onsemi
Description: DIODE GEN PURP 200V 20A D2PAK
Current - Reverse Leakage @ Vr: 100 µA @ 200 V
Voltage - Forward (Vf) (Max) @ If: 1.15 V @ 20 A
Voltage - DC Reverse (Vr) (Max): 200 V
Part Status: Last Time Buy
Operating Temperature - Junction: -65°C ~ 150°C
Supplier Device Package: TO-263 (D2Pak)
Current - Average Rectified (Io): 20A
Technology: Standard
Reverse Recovery Time (trr): 45 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Packaging: Cut Tape (CT)
Description: DIODE GEN PURP 200V 20A D2PAK
Current - Reverse Leakage @ Vr: 100 µA @ 200 V
Voltage - Forward (Vf) (Max) @ If: 1.15 V @ 20 A
Voltage - DC Reverse (Vr) (Max): 200 V
Part Status: Last Time Buy
Operating Temperature - Junction: -65°C ~ 150°C
Supplier Device Package: TO-263 (D2Pak)
Current - Average Rectified (Io): 20A
Technology: Standard
Reverse Recovery Time (trr): 45 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Packaging: Cut Tape (CT)
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| FOD3180SDV |
|
Hersteller: onsemi
Description: OPTOISO 5KV 1CH GATE DVR 8SMD
Packaging: Cut Tape (CT)
Package / Case: 8-SMD, Gull Wing
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 100°C
Voltage - Forward (Vf) (Typ): 1.43V
Current - Peak Output: 2.5A
Technology: Optical Coupling
Current - Output High, Low: 2A, 2A
Voltage - Isolation: 5000Vrms
Approval Agency: cUL, UL, VDE
Supplier Device Package: 8-SMD
Rise / Fall Time (Typ): 75ns, 55ns
Common Mode Transient Immunity (Min): 15kV/µs
Propagation Delay tpLH / tpHL (Max): 200ns, 200ns
Pulse Width Distortion (Max): 65ns
Part Status: Active
Number of Channels: 1
Current - DC Forward (If) (Max): 25 mA
Voltage - Output Supply: 10V ~ 20V
Description: OPTOISO 5KV 1CH GATE DVR 8SMD
Packaging: Cut Tape (CT)
Package / Case: 8-SMD, Gull Wing
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 100°C
Voltage - Forward (Vf) (Typ): 1.43V
Current - Peak Output: 2.5A
Technology: Optical Coupling
Current - Output High, Low: 2A, 2A
Voltage - Isolation: 5000Vrms
Approval Agency: cUL, UL, VDE
Supplier Device Package: 8-SMD
Rise / Fall Time (Typ): 75ns, 55ns
Common Mode Transient Immunity (Min): 15kV/µs
Propagation Delay tpLH / tpHL (Max): 200ns, 200ns
Pulse Width Distortion (Max): 65ns
Part Status: Active
Number of Channels: 1
Current - DC Forward (If) (Max): 25 mA
Voltage - Output Supply: 10V ~ 20V
auf Bestellung 546 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 4+ | 5.02 EUR |
| 10+ | 3.66 EUR |
| 100+ | 2.86 EUR |
| 500+ | 2.5 EUR |
| FOD420SD |
|
Hersteller: onsemi
Description: OPTOISOLATOR 5KV TRIAC 6DIP SMD
Current - DC Forward (If) (Max): 30 mA
Voltage - Off State: 600 V
Number of Channels: 1
Part Status: Active
Current - LED Trigger (Ift) (Max): 2mA
Static dV/dt (Min): 10kV/µs
Zero Crossing Circuit: No
Supplier Device Package: 6-SMD
Turn On Time: 60µs
Current - Hold (Ih): 500µA
Approval Agency: cUL, FIMKO, UL
Voltage - Isolation: 5000Vrms
Voltage - Forward (Vf) (Typ): 1.28V
Operating Temperature: -55°C ~ 100°C
Mounting Type: Surface Mount
Output Type: Triac
Package / Case: 6-SMD, Gull Wing
Packaging: Cut Tape (CT)
Description: OPTOISOLATOR 5KV TRIAC 6DIP SMD
Current - DC Forward (If) (Max): 30 mA
Voltage - Off State: 600 V
Number of Channels: 1
Part Status: Active
Current - LED Trigger (Ift) (Max): 2mA
Static dV/dt (Min): 10kV/µs
Zero Crossing Circuit: No
Supplier Device Package: 6-SMD
Turn On Time: 60µs
Current - Hold (Ih): 500µA
Approval Agency: cUL, FIMKO, UL
Voltage - Isolation: 5000Vrms
Voltage - Forward (Vf) (Typ): 1.28V
Operating Temperature: -55°C ~ 100°C
Mounting Type: Surface Mount
Output Type: Triac
Package / Case: 6-SMD, Gull Wing
Packaging: Cut Tape (CT)
auf Bestellung 5145 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 3+ | 7.6 EUR |
| 10+ | 5.63 EUR |
| 100+ | 4.46 EUR |
| 500+ | 3.96 EUR |
| FODM3063R2 |
|
Hersteller: onsemi
Description: OPTOISOLTR 3.75KV TRIAC 1CH 4SMD
Current - DC Forward (If) (Max): 60 mA
Voltage - Off State: 600 V
Current - On State (It (RMS)) (Max): 70 mA
Number of Channels: 1
Part Status: Active
Current - LED Trigger (Ift) (Max): 5mA
Static dV/dt (Min): 600V/µs
Zero Crossing Circuit: Yes
Supplier Device Package: 4-SMD
Current - Hold (Ih): 300µA (Typ)
Approval Agency: cUL, UL
Voltage - Isolation: 3750Vrms
Voltage - Forward (Vf) (Typ): 1.5V (Max)
Operating Temperature: -40°C ~ 100°C
Mounting Type: Surface Mount
Output Type: Triac
Package / Case: 4-SMD, Gull Wing
Packaging: Cut Tape (CT)
Description: OPTOISOLTR 3.75KV TRIAC 1CH 4SMD
Current - DC Forward (If) (Max): 60 mA
Voltage - Off State: 600 V
Current - On State (It (RMS)) (Max): 70 mA
Number of Channels: 1
Part Status: Active
Current - LED Trigger (Ift) (Max): 5mA
Static dV/dt (Min): 600V/µs
Zero Crossing Circuit: Yes
Supplier Device Package: 4-SMD
Current - Hold (Ih): 300µA (Typ)
Approval Agency: cUL, UL
Voltage - Isolation: 3750Vrms
Voltage - Forward (Vf) (Typ): 1.5V (Max)
Operating Temperature: -40°C ~ 100°C
Mounting Type: Surface Mount
Output Type: Triac
Package / Case: 4-SMD, Gull Wing
Packaging: Cut Tape (CT)
auf Bestellung 35789 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 6+ | 3.27 EUR |
| 10+ | 2.35 EUR |
| 100+ | 1.79 EUR |
| 500+ | 1.55 EUR |
| 1000+ | 1.47 EUR |
| FPF2125 |
|
Hersteller: onsemi
Description: IC PWR SWITCH P-CHAN 1:1 SOT23-5
Fault Protection: Current Limiting (Adjustable), Over Temperature, Reverse Current, UVLO
Supplier Device Package: SOT-23-5
Ratio - Input:Output: 1:1
Current - Output (Max): 1.5A
Packaging: Cut Tape (CT)
Mounting Type: Surface Mount
Output Type: P-Channel
Package / Case: SC-74A, SOT-753
Part Status: Obsolete
Voltage - Supply (Vcc/Vdd): Not Required
Voltage - Load: 1.8V ~ 5.5V
Input Type: Non-Inverting
Rds On (Typ): 125mOhm
Output Configuration: High Side
Operating Temperature: -40°C ~ 85°C (TA)
Switch Type: General Purpose
Interface: On/Off
Number of Outputs: 1
Description: IC PWR SWITCH P-CHAN 1:1 SOT23-5
Fault Protection: Current Limiting (Adjustable), Over Temperature, Reverse Current, UVLO
Supplier Device Package: SOT-23-5
Ratio - Input:Output: 1:1
Current - Output (Max): 1.5A
Packaging: Cut Tape (CT)
Mounting Type: Surface Mount
Output Type: P-Channel
Package / Case: SC-74A, SOT-753
Part Status: Obsolete
Voltage - Supply (Vcc/Vdd): Not Required
Voltage - Load: 1.8V ~ 5.5V
Input Type: Non-Inverting
Rds On (Typ): 125mOhm
Output Configuration: High Side
Operating Temperature: -40°C ~ 85°C (TA)
Switch Type: General Purpose
Interface: On/Off
Number of Outputs: 1
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| FQN1N50CTA |
|
Hersteller: onsemi
Description: MOSFET N-CH 500V 380MA TO92-3
Input Capacitance (Ciss) (Max) @ Vds: 195 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 6.4 nC @ 10 V
Drain to Source Voltage (Vdss): 500 V
Vgs (Max): ±30V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Active
Supplier Device Package: TO-92-3
Vgs(th) (Max) @ Id: 4V @ 250µA
Power Dissipation (Max): 890mW (Ta), 2.08W (Tc)
Rds On (Max) @ Id, Vgs: 6Ohm @ 190mA, 10V
Current - Continuous Drain (Id) @ 25°C: 380mA (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-226-3, TO-92-3 (TO-226AA) Formed Leads
Packaging: Cut Tape (CT)
Description: MOSFET N-CH 500V 380MA TO92-3
Input Capacitance (Ciss) (Max) @ Vds: 195 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 6.4 nC @ 10 V
Drain to Source Voltage (Vdss): 500 V
Vgs (Max): ±30V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Active
Supplier Device Package: TO-92-3
Vgs(th) (Max) @ Id: 4V @ 250µA
Power Dissipation (Max): 890mW (Ta), 2.08W (Tc)
Rds On (Max) @ Id, Vgs: 6Ohm @ 190mA, 10V
Current - Continuous Drain (Id) @ 25°C: 380mA (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-226-3, TO-92-3 (TO-226AA) Formed Leads
Packaging: Cut Tape (CT)
auf Bestellung 139 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 12+ | 1.57 EUR |
| 19+ | 0.97 EUR |
| 100+ | 0.64 EUR |
| FQT1N60CTF-WS |
|
Hersteller: onsemi
Description: MOSFET N-CH 600V 200MA SOT223-4
Input Capacitance (Ciss) (Max) @ Vds: 170 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 6.2 nC @ 10 V
Drain to Source Voltage (Vdss): 600 V
Vgs (Max): ±30V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Active
Supplier Device Package: SOT-223-4
Vgs(th) (Max) @ Id: 4V @ 250µA
Power Dissipation (Max): 2.1W (Tc)
Rds On (Max) @ Id, Vgs: 11.5Ohm @ 100mA, 10V
Current - Continuous Drain (Id) @ 25°C: 200mA (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-261-4, TO-261AA
Packaging: Cut Tape (CT)
Description: MOSFET N-CH 600V 200MA SOT223-4
Input Capacitance (Ciss) (Max) @ Vds: 170 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 6.2 nC @ 10 V
Drain to Source Voltage (Vdss): 600 V
Vgs (Max): ±30V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Active
Supplier Device Package: SOT-223-4
Vgs(th) (Max) @ Id: 4V @ 250µA
Power Dissipation (Max): 2.1W (Tc)
Rds On (Max) @ Id, Vgs: 11.5Ohm @ 100mA, 10V
Current - Continuous Drain (Id) @ 25°C: 200mA (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-261-4, TO-261AA
Packaging: Cut Tape (CT)
auf Bestellung 11111 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 13+ | 1.36 EUR |
| 19+ | 0.98 EUR |
| 100+ | 0.67 EUR |
| 500+ | 0.54 EUR |
| 1000+ | 0.49 EUR |
| 2000+ | 0.45 EUR |
| ISL9V5045S3ST |
|
Hersteller: onsemi
Description: IGBT 480V 51A TO263AB
Power - Max: 300 W
Voltage - Collector Emitter Breakdown (Max): 480 V
Current - Collector (Ic) (Max): 51 A
Part Status: Obsolete
Gate Charge: 32 nC
Test Condition: 300V, 1kOhm, 5V
Td (on/off) @ 25°C: -/10.8µs
Supplier Device Package: D²PAK (TO-263)
Vce(on) (Max) @ Vge, Ic: 1.6V @ 4V, 10A
Input Type: Logic
Operating Temperature: -40°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Packaging: Cut Tape (CT)
Description: IGBT 480V 51A TO263AB
Power - Max: 300 W
Voltage - Collector Emitter Breakdown (Max): 480 V
Current - Collector (Ic) (Max): 51 A
Part Status: Obsolete
Gate Charge: 32 nC
Test Condition: 300V, 1kOhm, 5V
Td (on/off) @ 25°C: -/10.8µs
Supplier Device Package: D²PAK (TO-263)
Vce(on) (Max) @ Vge, Ic: 1.6V @ 4V, 10A
Input Type: Logic
Operating Temperature: -40°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Packaging: Cut Tape (CT)
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| MOC8050SR2VM |
|
Hersteller: onsemi
Description: OPTOISOLTR 4.17KV 1CH DARL 6-SMD
Packaging: Cut Tape (CT)
Package / Case: 6-SMD, Gull Wing
Output Type: Darlington
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 100°C
Voltage - Forward (Vf) (Typ): 1.18V
Input Type: DC
Current - Output / Channel: 150mA
Voltage - Isolation: 4170Vrms
Current Transfer Ratio (Min): 500% @ 10mA
Supplier Device Package: 6-SMD
Voltage - Output (Max): 80V
Turn On / Turn Off Time (Typ): 8.5µs, 95µs
Part Status: Active
Number of Channels: 1
Current - DC Forward (If) (Max): 60 mA
Description: OPTOISOLTR 4.17KV 1CH DARL 6-SMD
Packaging: Cut Tape (CT)
Package / Case: 6-SMD, Gull Wing
Output Type: Darlington
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 100°C
Voltage - Forward (Vf) (Typ): 1.18V
Input Type: DC
Current - Output / Channel: 150mA
Voltage - Isolation: 4170Vrms
Current Transfer Ratio (Min): 500% @ 10mA
Supplier Device Package: 6-SMD
Voltage - Output (Max): 80V
Turn On / Turn Off Time (Typ): 8.5µs, 95µs
Part Status: Active
Number of Channels: 1
Current - DC Forward (If) (Max): 60 mA
auf Bestellung 1455 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 13+ | 1.39 EUR |
| 19+ | 0.97 EUR |
| 100+ | 0.71 EUR |
| 500+ | 0.6 EUR |
| CAT4101TV-T75 |
|
Hersteller: onsemi
Description: IC LED DRVR LIN PWM 1A D2PAK-5
Packaging: Tape & Reel (TR)
Package / Case: TO-263-6, D2PAK (5 Leads + Tab), TO-263BA
Voltage - Output: 25V
Mounting Type: Surface Mount
Number of Outputs: 1
Type: Linear
Operating Temperature: -40°C ~ 85°C (TA)
Applications: Lighting
Current - Output / Channel: 1A
Internal Switch(s): Yes
Supplier Device Package: TO-263 (D2Pak)
Dimming: PWM
Voltage - Supply (Min): 3V
Voltage - Supply (Max): 5.5V
Description: IC LED DRVR LIN PWM 1A D2PAK-5
Packaging: Tape & Reel (TR)
Package / Case: TO-263-6, D2PAK (5 Leads + Tab), TO-263BA
Voltage - Output: 25V
Mounting Type: Surface Mount
Number of Outputs: 1
Type: Linear
Operating Temperature: -40°C ~ 85°C (TA)
Applications: Lighting
Current - Output / Channel: 1A
Internal Switch(s): Yes
Supplier Device Package: TO-263 (D2Pak)
Dimming: PWM
Voltage - Supply (Min): 3V
Voltage - Supply (Max): 5.5V
Produkt ist nicht verfügbar
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Stück im Wert von UAH
| CAT4101TV-T75 |
|
Hersteller: onsemi
Description: IC LED DRVR LIN PWM 1A D2PAK-5
Packaging: Cut Tape (CT)
Package / Case: TO-263-6, D²Pak (5 Leads + Tab), TO-263BA
Voltage - Output: 25V
Mounting Type: Surface Mount
Number of Outputs: 1
Type: Linear
Operating Temperature: -40°C ~ 85°C (TA)
Applications: Lighting
Current - Output / Channel: 1A
Internal Switch(s): Yes
Supplier Device Package: D²PAK-5 (TO-263-5)
Dimming: PWM
Voltage - Supply (Min): 3V
Voltage - Supply (Max): 5.5V
Description: IC LED DRVR LIN PWM 1A D2PAK-5
Packaging: Cut Tape (CT)
Package / Case: TO-263-6, D²Pak (5 Leads + Tab), TO-263BA
Voltage - Output: 25V
Mounting Type: Surface Mount
Number of Outputs: 1
Type: Linear
Operating Temperature: -40°C ~ 85°C (TA)
Applications: Lighting
Current - Output / Channel: 1A
Internal Switch(s): Yes
Supplier Device Package: D²PAK-5 (TO-263-5)
Dimming: PWM
Voltage - Supply (Min): 3V
Voltage - Supply (Max): 5.5V
Produkt ist nicht verfügbar
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Stück im Wert von UAH
| FDB047N10 |
|
Hersteller: onsemi
Description: MOSFET N-CH 100V 120A D2PAK
Input Capacitance (Ciss) (Max) @ Vds: 15265 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 210 nC @ 10 V
Drain to Source Voltage (Vdss): 100 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Active
Supplier Device Package: TO-263 (D2Pak)
Vgs(th) (Max) @ Id: 4.5V @ 250µA
Power Dissipation (Max): 375W (Tc)
Rds On (Max) @ Id, Vgs: 4.7mOhm @ 75A, 10V
Current - Continuous Drain (Id) @ 25°C: 120A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Packaging: Tape & Reel (TR)
Description: MOSFET N-CH 100V 120A D2PAK
Input Capacitance (Ciss) (Max) @ Vds: 15265 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 210 nC @ 10 V
Drain to Source Voltage (Vdss): 100 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Active
Supplier Device Package: TO-263 (D2Pak)
Vgs(th) (Max) @ Id: 4.5V @ 250µA
Power Dissipation (Max): 375W (Tc)
Rds On (Max) @ Id, Vgs: 4.7mOhm @ 75A, 10V
Current - Continuous Drain (Id) @ 25°C: 120A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Packaging: Tape & Reel (TR)
auf Bestellung 1600 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 800+ | 2.93 EUR |
| FDMS8880 |
|
Hersteller: onsemi
Description: MOSFET N-CH 30V 13.5A/21A 8PQFN
Input Capacitance (Ciss) (Max) @ Vds: 1585 pF @ 15 V
Gate Charge (Qg) (Max) @ Vgs: 33 nC @ 10 V
Drain to Source Voltage (Vdss): 30 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Supplier Device Package: 8-PQFN (5x6)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Power Dissipation (Max): 2.5W (Ta), 42W (Tc)
Rds On (Max) @ Id, Vgs: 8.5mOhm @ 13.5A, 10V
Current - Continuous Drain (Id) @ 25°C: 13.5A (Ta), 21A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-PowerTDFN
Packaging: Tape & Reel (TR)
Description: MOSFET N-CH 30V 13.5A/21A 8PQFN
Input Capacitance (Ciss) (Max) @ Vds: 1585 pF @ 15 V
Gate Charge (Qg) (Max) @ Vgs: 33 nC @ 10 V
Drain to Source Voltage (Vdss): 30 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Supplier Device Package: 8-PQFN (5x6)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Power Dissipation (Max): 2.5W (Ta), 42W (Tc)
Rds On (Max) @ Id, Vgs: 8.5mOhm @ 13.5A, 10V
Current - Continuous Drain (Id) @ 25°C: 13.5A (Ta), 21A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-PowerTDFN
Packaging: Tape & Reel (TR)
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Stück im Wert von UAH
| FFPF08S60SNTU |
|
Hersteller: onsemi
Description: DIODE GEN PURP 600V 8A TO220F-2L
Current - Reverse Leakage @ Vr: 100 µA @ 600 V
Voltage - Forward (Vf) (Max) @ If: 3.4 V @ 8 A
Voltage - DC Reverse (Vr) (Max): 600 V
Part Status: Obsolete
Operating Temperature - Junction: -65°C ~ 150°C
Supplier Device Package: TO-220F-2L
Current - Average Rectified (Io): 8A
Technology: Avalanche
Reverse Recovery Time (trr): 25 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Through Hole
Package / Case: TO-220-2 Full Pack
Packaging: Tube
Description: DIODE GEN PURP 600V 8A TO220F-2L
Current - Reverse Leakage @ Vr: 100 µA @ 600 V
Voltage - Forward (Vf) (Max) @ If: 3.4 V @ 8 A
Voltage - DC Reverse (Vr) (Max): 600 V
Part Status: Obsolete
Operating Temperature - Junction: -65°C ~ 150°C
Supplier Device Package: TO-220F-2L
Current - Average Rectified (Io): 8A
Technology: Avalanche
Reverse Recovery Time (trr): 25 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Through Hole
Package / Case: TO-220-2 Full Pack
Packaging: Tube
Produkt ist nicht verfügbar
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Stück im Wert von UAH
| FOD410 |
|
Hersteller: onsemi
Description: OPTOISOLATOR 5KV TRIAC 6DIP
Current - DC Forward (If) (Max): 30 mA
Voltage - Off State: 600 V
Number of Channels: 1
Part Status: Active
Current - LED Trigger (Ift) (Max): 2mA
Static dV/dt (Min): 10kV/µs
Zero Crossing Circuit: Yes
Supplier Device Package: 6-DIP
Turn On Time: 60µs
Current - Hold (Ih): 500µA
Approval Agency: CSA, UL
Voltage - Isolation: 5000Vrms
Voltage - Forward (Vf) (Typ): 1.25V
Operating Temperature: -55°C ~ 100°C
Mounting Type: Through Hole
Output Type: Triac
Package / Case: 6-DIP (0.300", 7.62mm)
Packaging: Tube
Description: OPTOISOLATOR 5KV TRIAC 6DIP
Current - DC Forward (If) (Max): 30 mA
Voltage - Off State: 600 V
Number of Channels: 1
Part Status: Active
Current - LED Trigger (Ift) (Max): 2mA
Static dV/dt (Min): 10kV/µs
Zero Crossing Circuit: Yes
Supplier Device Package: 6-DIP
Turn On Time: 60µs
Current - Hold (Ih): 500µA
Approval Agency: CSA, UL
Voltage - Isolation: 5000Vrms
Voltage - Forward (Vf) (Typ): 1.25V
Operating Temperature: -55°C ~ 100°C
Mounting Type: Through Hole
Output Type: Triac
Package / Case: 6-DIP (0.300", 7.62mm)
Packaging: Tube
auf Bestellung 1825 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 4+ | 4.98 EUR |
| 50+ | 3.52 EUR |
| 100+ | 2.95 EUR |
| FOD4108 |
|
Hersteller: onsemi
Description: OPTOISOLATOR 5KV TRIAC 6DIP
Current - DC Forward (If) (Max): 30 mA
Voltage - Off State: 800 V
Number of Channels: 1
Part Status: Active
Current - LED Trigger (Ift) (Max): 2mA
Static dV/dt (Min): 10kV/µs
Zero Crossing Circuit: Yes
Supplier Device Package: 6-DIP
Turn On Time: 60µs
Current - Hold (Ih): 500µA
Approval Agency: CSA, UL
Voltage - Isolation: 5000Vrms
Voltage - Forward (Vf) (Typ): 1.25V
Operating Temperature: -55°C ~ 100°C
Mounting Type: Through Hole
Output Type: Triac
Package / Case: 6-DIP (0.300", 7.62mm)
Packaging: Tube
Description: OPTOISOLATOR 5KV TRIAC 6DIP
Current - DC Forward (If) (Max): 30 mA
Voltage - Off State: 800 V
Number of Channels: 1
Part Status: Active
Current - LED Trigger (Ift) (Max): 2mA
Static dV/dt (Min): 10kV/µs
Zero Crossing Circuit: Yes
Supplier Device Package: 6-DIP
Turn On Time: 60µs
Current - Hold (Ih): 500µA
Approval Agency: CSA, UL
Voltage - Isolation: 5000Vrms
Voltage - Forward (Vf) (Typ): 1.25V
Operating Temperature: -55°C ~ 100°C
Mounting Type: Through Hole
Output Type: Triac
Package / Case: 6-DIP (0.300", 7.62mm)
Packaging: Tube
auf Bestellung 19142 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 3+ | 6.44 EUR |
| 50+ | 4.56 EUR |
| 100+ | 3.74 EUR |
| 500+ | 3.15 EUR |
| 1000+ | 2.89 EUR |
| 2000+ | 2.77 EUR |
| 5000+ | 2.72 EUR |
| FPF1003A |
|
Hersteller: onsemi
Description: IC PWR SWITCH P-CHAN 1:1 6WLCSP
Supplier Device Package: 6-WLCSP (0.96x1.66)
Ratio - Input:Output: 1:1
Current - Output (Max): 2A
Voltage - Supply (Vcc/Vdd): Not Required
Voltage - Load: 1.2V ~ 5.5V
Input Type: Non-Inverting
Rds On (Typ): 20mOhm
Output Configuration: High Side
Operating Temperature: -40°C ~ 85°C (TA)
Switch Type: General Purpose
Interface: On/Off
Number of Outputs: 1
Mounting Type: Surface Mount
Output Type: P-Channel
Package / Case: 6-UFBGA, WLCSP
Features: Slew Rate Controlled
Packaging: Tape & Reel (TR)
Description: IC PWR SWITCH P-CHAN 1:1 6WLCSP
Supplier Device Package: 6-WLCSP (0.96x1.66)
Ratio - Input:Output: 1:1
Current - Output (Max): 2A
Voltage - Supply (Vcc/Vdd): Not Required
Voltage - Load: 1.2V ~ 5.5V
Input Type: Non-Inverting
Rds On (Typ): 20mOhm
Output Configuration: High Side
Operating Temperature: -40°C ~ 85°C (TA)
Switch Type: General Purpose
Interface: On/Off
Number of Outputs: 1
Mounting Type: Surface Mount
Output Type: P-Channel
Package / Case: 6-UFBGA, WLCSP
Features: Slew Rate Controlled
Packaging: Tape & Reel (TR)
auf Bestellung 3000 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 3000+ | 0.68 EUR |
| FSA642UMX |
Hersteller: onsemi
Description: IC SWITCH 3PDT 24UMLP
Packaging: Tape & Reel (TR)
Package / Case: 24-UFQFN
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 85°C (TA)
Applications: MIPI
On-State Resistance (Max): 14Ohm
-3db Bandwidth: 1GHz
Supplier Device Package: 24-UMLP (3.4x2.5)
Voltage - Supply, Single (V+): 2.65V ~ 4.3V
Switch Circuit: 3PDT
Part Status: Obsolete
Number of Channels: 1
Description: IC SWITCH 3PDT 24UMLP
Packaging: Tape & Reel (TR)
Package / Case: 24-UFQFN
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 85°C (TA)
Applications: MIPI
On-State Resistance (Max): 14Ohm
-3db Bandwidth: 1GHz
Supplier Device Package: 24-UMLP (3.4x2.5)
Voltage - Supply, Single (V+): 2.65V ~ 4.3V
Switch Circuit: 3PDT
Part Status: Obsolete
Number of Channels: 1
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Stück im Wert von UAH
| FDB047N10 |
|
Hersteller: onsemi
Description: MOSFET N-CH 100V 120A D2PAK
Input Capacitance (Ciss) (Max) @ Vds: 15265 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 210 nC @ 10 V
Drain to Source Voltage (Vdss): 100 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Active
Supplier Device Package: TO-263 (D2Pak)
Vgs(th) (Max) @ Id: 4.5V @ 250µA
Power Dissipation (Max): 375W (Tc)
Rds On (Max) @ Id, Vgs: 4.7mOhm @ 75A, 10V
Current - Continuous Drain (Id) @ 25°C: 120A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Packaging: Cut Tape (CT)
Description: MOSFET N-CH 100V 120A D2PAK
Input Capacitance (Ciss) (Max) @ Vds: 15265 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 210 nC @ 10 V
Drain to Source Voltage (Vdss): 100 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Active
Supplier Device Package: TO-263 (D2Pak)
Vgs(th) (Max) @ Id: 4.5V @ 250µA
Power Dissipation (Max): 375W (Tc)
Rds On (Max) @ Id, Vgs: 4.7mOhm @ 75A, 10V
Current - Continuous Drain (Id) @ 25°C: 120A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Packaging: Cut Tape (CT)
auf Bestellung 1990 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 4+ | 5.46 EUR |
| 10+ | 4.36 EUR |
| 100+ | 3.6 EUR |
| FDMS8880 |
|
Hersteller: onsemi
Description: MOSFET N-CH 30V 13.5A/21A 8PQFN
Input Capacitance (Ciss) (Max) @ Vds: 1585 pF @ 15 V
Gate Charge (Qg) (Max) @ Vgs: 33 nC @ 10 V
Drain to Source Voltage (Vdss): 30 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Supplier Device Package: 8-PQFN (5x6)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Power Dissipation (Max): 2.5W (Ta), 42W (Tc)
Rds On (Max) @ Id, Vgs: 8.5mOhm @ 13.5A, 10V
Current - Continuous Drain (Id) @ 25°C: 13.5A (Ta), 21A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-PowerTDFN
Packaging: Cut Tape (CT)
Description: MOSFET N-CH 30V 13.5A/21A 8PQFN
Input Capacitance (Ciss) (Max) @ Vds: 1585 pF @ 15 V
Gate Charge (Qg) (Max) @ Vgs: 33 nC @ 10 V
Drain to Source Voltage (Vdss): 30 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Supplier Device Package: 8-PQFN (5x6)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Power Dissipation (Max): 2.5W (Ta), 42W (Tc)
Rds On (Max) @ Id, Vgs: 8.5mOhm @ 13.5A, 10V
Current - Continuous Drain (Id) @ 25°C: 13.5A (Ta), 21A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-PowerTDFN
Packaging: Cut Tape (CT)
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| FPF1003A |
|
Hersteller: onsemi
Description: IC PWR SWITCH P-CHAN 1:1 6WLCSP
Supplier Device Package: 6-WLCSP (0.96x1.66)
Ratio - Input:Output: 1:1
Current - Output (Max): 2A
Voltage - Supply (Vcc/Vdd): Not Required
Voltage - Load: 1.2V ~ 5.5V
Input Type: Non-Inverting
Rds On (Typ): 20mOhm
Output Configuration: High Side
Operating Temperature: -40°C ~ 85°C (TA)
Switch Type: General Purpose
Interface: On/Off
Number of Outputs: 1
Mounting Type: Surface Mount
Output Type: P-Channel
Package / Case: 6-UFBGA, WLCSP
Features: Slew Rate Controlled
Packaging: Cut Tape (CT)
Description: IC PWR SWITCH P-CHAN 1:1 6WLCSP
Supplier Device Package: 6-WLCSP (0.96x1.66)
Ratio - Input:Output: 1:1
Current - Output (Max): 2A
Voltage - Supply (Vcc/Vdd): Not Required
Voltage - Load: 1.2V ~ 5.5V
Input Type: Non-Inverting
Rds On (Typ): 20mOhm
Output Configuration: High Side
Operating Temperature: -40°C ~ 85°C (TA)
Switch Type: General Purpose
Interface: On/Off
Number of Outputs: 1
Mounting Type: Surface Mount
Output Type: P-Channel
Package / Case: 6-UFBGA, WLCSP
Features: Slew Rate Controlled
Packaging: Cut Tape (CT)
auf Bestellung 4802 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 11+ | 1.67 EUR |
| 12+ | 1.5 EUR |
| 25+ | 1.42 EUR |
| 100+ | 1.09 EUR |
| 250+ | 0.97 EUR |
| 500+ | 0.91 EUR |
| 1000+ | 0.71 EUR |
| FDA24N50 |
|
Hersteller: onsemi
Description: MOSFET N-CH 500V 24A TO3PN
Packaging: Tube
Package / Case: TO-3P-3, SC-65-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 24A (Tc)
Rds On (Max) @ Id, Vgs: 190mOhm @ 12A, 10V
Power Dissipation (Max): 270W (Tc)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: TO-3PN
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 500 V
Gate Charge (Qg) (Max) @ Vgs: 85 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4150 pF @ 25 V
Description: MOSFET N-CH 500V 24A TO3PN
Packaging: Tube
Package / Case: TO-3P-3, SC-65-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 24A (Tc)
Rds On (Max) @ Id, Vgs: 190mOhm @ 12A, 10V
Power Dissipation (Max): 270W (Tc)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: TO-3PN
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 500 V
Gate Charge (Qg) (Max) @ Vgs: 85 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4150 pF @ 25 V
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| FDA28N50 |
|
Hersteller: onsemi
Description: MOSFET N-CH 500V 28A TO3PN
Packaging: Tube
Package / Case: TO-3P-3, SC-65-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 28A (Tc)
Rds On (Max) @ Id, Vgs: 155mOhm @ 14A, 10V
Power Dissipation (Max): 310W (Tc)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: TO-3PN
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 500 V
Gate Charge (Qg) (Max) @ Vgs: 105 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 5140 pF @ 25 V
Description: MOSFET N-CH 500V 28A TO3PN
Packaging: Tube
Package / Case: TO-3P-3, SC-65-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 28A (Tc)
Rds On (Max) @ Id, Vgs: 155mOhm @ 14A, 10V
Power Dissipation (Max): 310W (Tc)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: TO-3PN
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 500 V
Gate Charge (Qg) (Max) @ Vgs: 105 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 5140 pF @ 25 V
auf Bestellung 291 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 2+ | 8.99 EUR |
| 30+ | 5.11 EUR |
| 120+ | 4.25 EUR |
| FGH60N60SFDTU |
|
Hersteller: onsemi
Description: IGBT FIELD STOP 600V 120A TO-247
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 47 ns
Vce(on) (Max) @ Vge, Ic: 2.9V @ 15V, 60A
Supplier Device Package: TO-247-3
IGBT Type: Field Stop
Td (on/off) @ 25°C: 22ns/134ns
Switching Energy: 1.79mJ (on), 670µJ (off)
Test Condition: 400V, 60A, 5Ohm, 15V
Gate Charge: 198 nC
Part Status: Obsolete
Current - Collector (Ic) (Max): 120 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 180 A
Power - Max: 378 W
Description: IGBT FIELD STOP 600V 120A TO-247
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 47 ns
Vce(on) (Max) @ Vge, Ic: 2.9V @ 15V, 60A
Supplier Device Package: TO-247-3
IGBT Type: Field Stop
Td (on/off) @ 25°C: 22ns/134ns
Switching Energy: 1.79mJ (on), 670µJ (off)
Test Condition: 400V, 60A, 5Ohm, 15V
Gate Charge: 198 nC
Part Status: Obsolete
Current - Collector (Ic) (Max): 120 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 180 A
Power - Max: 378 W
Produkt ist nicht verfügbar
Mindestbestellmenge: 450 Stücke
Im Einkaufswagen
Stück im Wert von UAH
| FGH60N60UFDTU |
|
Hersteller: onsemi
Description: IGBT FIELD STOP 600V 120A TO-247
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 47 ns
Vce(on) (Max) @ Vge, Ic: 2.4V @ 15V, 60A
Supplier Device Package: TO-247-3
IGBT Type: Field Stop
Td (on/off) @ 25°C: 23ns/130ns
Switching Energy: 1.81mJ (on), 810µJ (off)
Test Condition: 400V, 60A, 5Ohm, 15V
Gate Charge: 188 nC
Part Status: Obsolete
Current - Collector (Ic) (Max): 120 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 180 A
Power - Max: 298 W
Description: IGBT FIELD STOP 600V 120A TO-247
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 47 ns
Vce(on) (Max) @ Vge, Ic: 2.4V @ 15V, 60A
Supplier Device Package: TO-247-3
IGBT Type: Field Stop
Td (on/off) @ 25°C: 23ns/130ns
Switching Energy: 1.81mJ (on), 810µJ (off)
Test Condition: 400V, 60A, 5Ohm, 15V
Gate Charge: 188 nC
Part Status: Obsolete
Current - Collector (Ic) (Max): 120 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 180 A
Power - Max: 298 W
Produkt ist nicht verfügbar
Mindestbestellmenge: 450 Stücke
Im Einkaufswagen
Stück im Wert von UAH
| FSUSB104UMX |
|
Hersteller: onsemi
Description: IC USB SWITCH DUAL DPDT 10UMLP
Number of Channels: 1
Switch Circuit: DPDT
Voltage - Supply, Single (V+): 3V ~ 4.4V
Supplier Device Package: 10-UMLP (1.8x1.4)
-3db Bandwidth: 720MHz
On-State Resistance (Max): 6.5Ohm
Applications: USB
Operating Temperature: -40°C ~ 85°C (TA)
Mounting Type: Surface Mount
Package / Case: 10-UFQFN
Features: Bi-Directional, USB 2.0
Packaging: Tape & Reel (TR)
Description: IC USB SWITCH DUAL DPDT 10UMLP
Number of Channels: 1
Switch Circuit: DPDT
Voltage - Supply, Single (V+): 3V ~ 4.4V
Supplier Device Package: 10-UMLP (1.8x1.4)
-3db Bandwidth: 720MHz
On-State Resistance (Max): 6.5Ohm
Applications: USB
Operating Temperature: -40°C ~ 85°C (TA)
Mounting Type: Surface Mount
Package / Case: 10-UFQFN
Features: Bi-Directional, USB 2.0
Packaging: Tape & Reel (TR)
auf Bestellung 5000 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 5000+ | 0.54 EUR |
| SG6521SZ |
|
Hersteller: onsemi
Description: IC SUPERVISOR 4 CHANNEL 16SOP
Description: IC SUPERVISOR 4 CHANNEL 16SOP
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| FSUSB104UMX |
|
Hersteller: onsemi
Description: IC USB SWITCH DUAL DPDT 10UMLP
Number of Channels: 1
Switch Circuit: DPDT
Voltage - Supply, Single (V+): 3V ~ 4.4V
Supplier Device Package: 10-UMLP (1.8x1.4)
-3db Bandwidth: 720MHz
On-State Resistance (Max): 6.5Ohm
Applications: USB
Operating Temperature: -40°C ~ 85°C (TA)
Mounting Type: Surface Mount
Package / Case: 10-UFQFN
Features: Bi-Directional, USB 2.0
Packaging: Cut Tape (CT)
Description: IC USB SWITCH DUAL DPDT 10UMLP
Number of Channels: 1
Switch Circuit: DPDT
Voltage - Supply, Single (V+): 3V ~ 4.4V
Supplier Device Package: 10-UMLP (1.8x1.4)
-3db Bandwidth: 720MHz
On-State Resistance (Max): 6.5Ohm
Applications: USB
Operating Temperature: -40°C ~ 85°C (TA)
Mounting Type: Surface Mount
Package / Case: 10-UFQFN
Features: Bi-Directional, USB 2.0
Packaging: Cut Tape (CT)
auf Bestellung 13767 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 8+ | 2.39 EUR |
| 12+ | 1.47 EUR |
| 25+ | 1.23 EUR |
| 100+ | 0.95 EUR |
| 250+ | 0.82 EUR |
| 500+ | 0.74 EUR |
| 1000+ | 0.67 EUR |
| 2500+ | 0.59 EUR |
| SG6521SZ |
|
Hersteller: onsemi
Description: IC SUPERVISOR 4 CHANNEL 16SOP
Description: IC SUPERVISOR 4 CHANNEL 16SOP
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| 1N4002_NL |
|
Hersteller: onsemi
Description: DIODE STANDARD 100V 1A DO41
Packaging: Tape & Reel (TR)
Package / Case: DO-204AL, DO-41, Axial
Mounting Type: Through Hole
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard
Capacitance @ Vr, F: 15pF @ 4V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: DO-41
Operating Temperature - Junction: -55°C ~ 175°C
Part Status: Obsolete
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 1 A
Current - Reverse Leakage @ Vr: 10 µA @ 100 V
Description: DIODE STANDARD 100V 1A DO41
Packaging: Tape & Reel (TR)
Package / Case: DO-204AL, DO-41, Axial
Mounting Type: Through Hole
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard
Capacitance @ Vr, F: 15pF @ 4V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: DO-41
Operating Temperature - Junction: -55°C ~ 175°C
Part Status: Obsolete
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 1 A
Current - Reverse Leakage @ Vr: 10 µA @ 100 V
Produkt ist nicht verfügbar
Mindestbestellmenge: 25000 Stücke
Im Einkaufswagen
Stück im Wert von UAH
| 1N4004_NL |
|
Hersteller: onsemi
Description: DIODE STANDARD 400V 1A DO41
Packaging: Tape & Reel (TR)
Package / Case: DO-204AL, DO-41, Axial
Mounting Type: Through Hole
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard
Capacitance @ Vr, F: 15pF @ 4V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: DO-41
Operating Temperature - Junction: -55°C ~ 175°C
Part Status: Obsolete
Voltage - DC Reverse (Vr) (Max): 400 V
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 1 A
Current - Reverse Leakage @ Vr: 10 µA @ 400 V
Current Coupled to Voltage - Forward (Vf) (Max) @ If: 1
Voltage Coupled to Current - Reverse Leakage @ Vr: 400
Description: DIODE STANDARD 400V 1A DO41
Packaging: Tape & Reel (TR)
Package / Case: DO-204AL, DO-41, Axial
Mounting Type: Through Hole
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard
Capacitance @ Vr, F: 15pF @ 4V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: DO-41
Operating Temperature - Junction: -55°C ~ 175°C
Part Status: Obsolete
Voltage - DC Reverse (Vr) (Max): 400 V
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 1 A
Current - Reverse Leakage @ Vr: 10 µA @ 400 V
Current Coupled to Voltage - Forward (Vf) (Max) @ If: 1
Voltage Coupled to Current - Reverse Leakage @ Vr: 400
Produkt ist nicht verfügbar
Mindestbestellmenge: 25000 Stücke
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| 1N4448WT |
|
Hersteller: onsemi
Description: DIODE STANDARD 75V 200MA SOD523F
Packaging: Tape & Reel (TR)
Package / Case: SC-79, SOD-523F
Mounting Type: Surface Mount
Speed: Small Signal =< 200mA (Io), Any Speed
Reverse Recovery Time (trr): 4 ns
Technology: Standard
Capacitance @ Vr, F: 4pF @ 0V, 1MHz
Current - Average Rectified (Io): 200mA
Supplier Device Package: SOD-523F
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 75 V
Voltage - Forward (Vf) (Max) @ If: 1 V @ 100 mA
Current - Reverse Leakage @ Vr: 5 µA @ 75 V
Description: DIODE STANDARD 75V 200MA SOD523F
Packaging: Tape & Reel (TR)
Package / Case: SC-79, SOD-523F
Mounting Type: Surface Mount
Speed: Small Signal =< 200mA (Io), Any Speed
Reverse Recovery Time (trr): 4 ns
Technology: Standard
Capacitance @ Vr, F: 4pF @ 0V, 1MHz
Current - Average Rectified (Io): 200mA
Supplier Device Package: SOD-523F
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 75 V
Voltage - Forward (Vf) (Max) @ If: 1 V @ 100 mA
Current - Reverse Leakage @ Vr: 5 µA @ 75 V
Produkt ist nicht verfügbar
Mindestbestellmenge: 8000 Stücke
Im Einkaufswagen
Stück im Wert von UAH
| 1N5231C |
|
Hersteller: onsemi
Description: DIODE ZENER 5.1V 500MW DO35
Packaging: Bulk
Current - Reverse Leakage @ Vr: 5 µA @ 2 V
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 200 mA
Power - Max: 500 mW
Part Status: Active
Supplier Device Package: DO-35
Impedance (Max) (Zzt): 17 Ohms
Voltage - Zener (Nom) (Vz): 5.1 V
Operating Temperature: -65°C ~ 200°C
Mounting Type: Through Hole
Package / Case: DO-204AH, DO-35, Axial
Tolerance: ±2%
Description: DIODE ZENER 5.1V 500MW DO35
Packaging: Bulk
Current - Reverse Leakage @ Vr: 5 µA @ 2 V
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 200 mA
Power - Max: 500 mW
Part Status: Active
Supplier Device Package: DO-35
Impedance (Max) (Zzt): 17 Ohms
Voltage - Zener (Nom) (Vz): 5.1 V
Operating Temperature: -65°C ~ 200°C
Mounting Type: Through Hole
Package / Case: DO-204AH, DO-35, Axial
Tolerance: ±2%
auf Bestellung 2741 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 112+ | 0.16 EUR |
| 228+ | 0.077 EUR |
| 400+ | 0.044 EUR |
| 1N5231CTR |
|
Hersteller: onsemi
Description: DIODE ZENER 5.1V 500MW DO35
Current - Reverse Leakage @ Vr: 5 µA @ 2 V
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 200 mA
Power - Max: 500 mW
Impedance (Max) (Zzt): 17 Ohms
Voltage - Zener (Nom) (Vz): 5.1 V
Operating Temperature: -65°C ~ 200°C
Mounting Type: Through Hole
Package / Case: DO-204AH, DO-35, Axial
Tolerance: ±2%
Packaging: Tape & Reel (TR)
Part Status: Active
Supplier Device Package: DO-35
Description: DIODE ZENER 5.1V 500MW DO35
Current - Reverse Leakage @ Vr: 5 µA @ 2 V
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 200 mA
Power - Max: 500 mW
Impedance (Max) (Zzt): 17 Ohms
Voltage - Zener (Nom) (Vz): 5.1 V
Operating Temperature: -65°C ~ 200°C
Mounting Type: Through Hole
Package / Case: DO-204AH, DO-35, Axial
Tolerance: ±2%
Packaging: Tape & Reel (TR)
Part Status: Active
Supplier Device Package: DO-35
auf Bestellung 85000 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 5000+ | 0.043 EUR |
| 10000+ | 0.039 EUR |
| 1N914BWT |
|
Hersteller: onsemi
Description: DIODE STANDARD 75V 200MA SOD523F
Packaging: Tape & Reel (TR)
Package / Case: SC-79, SOD-523F
Mounting Type: Surface Mount
Speed: Small Signal =< 200mA (Io), Any Speed
Reverse Recovery Time (trr): 4 ns
Technology: Standard
Capacitance @ Vr, F: 4pF @ 0V, 1MHz
Current - Average Rectified (Io): 200mA
Supplier Device Package: SOD-523F
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 75 V
Voltage - Forward (Vf) (Max) @ If: 1 V @ 100 mA
Current - Reverse Leakage @ Vr: 5 µA @ 75 V
Description: DIODE STANDARD 75V 200MA SOD523F
Packaging: Tape & Reel (TR)
Package / Case: SC-79, SOD-523F
Mounting Type: Surface Mount
Speed: Small Signal =< 200mA (Io), Any Speed
Reverse Recovery Time (trr): 4 ns
Technology: Standard
Capacitance @ Vr, F: 4pF @ 0V, 1MHz
Current - Average Rectified (Io): 200mA
Supplier Device Package: SOD-523F
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 75 V
Voltage - Forward (Vf) (Max) @ If: 1 V @ 100 mA
Current - Reverse Leakage @ Vr: 5 µA @ 75 V
auf Bestellung 248000 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 8000+ | 0.038 EUR |
| 16000+ | 0.035 EUR |
| 2N5245_J35Z |
|
Hersteller: onsemi
Description: RF MOSFET JFET 30V TO92-3
Voltage - Rated: 30 V
Part Status: Obsolete
Supplier Device Package: TO-92-3
Technology: JFET
Configuration: N-Channel
Mounting Type: Through Hole
Current Rating (Amps): 15mA
Package / Case: TO-226-3, TO-92-3 (TO-226AA) Formed Leads
Packaging: Bulk
Description: RF MOSFET JFET 30V TO92-3
Voltage - Rated: 30 V
Part Status: Obsolete
Supplier Device Package: TO-92-3
Technology: JFET
Configuration: N-Channel
Mounting Type: Through Hole
Current Rating (Amps): 15mA
Package / Case: TO-226-3, TO-92-3 (TO-226AA) Formed Leads
Packaging: Bulk
Produkt ist nicht verfügbar
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| 2N5246_J35Z |
|
Hersteller: onsemi
Description: RF MOSFET JFET 30V TO92-3
Voltage - Rated: 30 V
Supplier Device Package: TO-92-3
Technology: JFET
Configuration: N-Channel
Mounting Type: Through Hole
Current Rating (Amps): 7mA
Package / Case: TO-226-3, TO-92-3 (TO-226AA) Formed Leads
Packaging: Bulk
Description: RF MOSFET JFET 30V TO92-3
Voltage - Rated: 30 V
Supplier Device Package: TO-92-3
Technology: JFET
Configuration: N-Channel
Mounting Type: Through Hole
Current Rating (Amps): 7mA
Package / Case: TO-226-3, TO-92-3 (TO-226AA) Formed Leads
Packaging: Bulk
Produkt ist nicht verfügbar
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| 2N5247_J35Z |
Hersteller: onsemi
Description: RF MOSFET JFET 30V TO92-3
Voltage - Rated: 30 V
Supplier Device Package: TO-92-3
Noise Figure: 4dB
Technology: JFET
Configuration: N-Channel
Frequency: 400MHz
Mounting Type: Through Hole
Package / Case: TO-226-3, TO-92-3 (TO-226AA) Formed Leads
Packaging: Bulk
Description: RF MOSFET JFET 30V TO92-3
Voltage - Rated: 30 V
Supplier Device Package: TO-92-3
Noise Figure: 4dB
Technology: JFET
Configuration: N-Channel
Frequency: 400MHz
Mounting Type: Through Hole
Package / Case: TO-226-3, TO-92-3 (TO-226AA) Formed Leads
Packaging: Bulk
Produkt ist nicht verfügbar
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Stück im Wert von UAH
| 2N5950_J35Z |
|
Hersteller: onsemi
Description: RF MOSFET JFET 30V TO92-3
Voltage - Rated: 30 V
Part Status: Obsolete
Supplier Device Package: TO-92-3
Configuration: N-Channel
Mounting Type: Through Hole
Current Rating (Amps): 15mA
Package / Case: TO-226-3, TO-92-3 (TO-226AA) Formed Leads
Packaging: Bulk
Technology: JFET
Description: RF MOSFET JFET 30V TO92-3
Voltage - Rated: 30 V
Part Status: Obsolete
Supplier Device Package: TO-92-3
Configuration: N-Channel
Mounting Type: Through Hole
Current Rating (Amps): 15mA
Package / Case: TO-226-3, TO-92-3 (TO-226AA) Formed Leads
Packaging: Bulk
Technology: JFET
Produkt ist nicht verfügbar
Mindestbestellmenge: 2000 Stücke
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Stück im Wert von UAH
| 2N5951_J35Z |
|
Hersteller: onsemi
Description: RF MOSFET JFET 15V TO92-3
Voltage - Test: 15 V
Voltage - Rated: 30 V
Part Status: Obsolete
Supplier Device Package: TO-92-3
Noise Figure: 2dB
Technology: JFET
Configuration: N-Channel
Frequency: 1kHz
Mounting Type: Through Hole
Current Rating (Amps): 13mA
Package / Case: TO-226-3, TO-92-3 (TO-226AA) Formed Leads
Packaging: Bulk
Description: RF MOSFET JFET 15V TO92-3
Voltage - Test: 15 V
Voltage - Rated: 30 V
Part Status: Obsolete
Supplier Device Package: TO-92-3
Noise Figure: 2dB
Technology: JFET
Configuration: N-Channel
Frequency: 1kHz
Mounting Type: Through Hole
Current Rating (Amps): 13mA
Package / Case: TO-226-3, TO-92-3 (TO-226AA) Formed Leads
Packaging: Bulk
Produkt ist nicht verfügbar
Mindestbestellmenge: 2000 Stücke
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| 2N5952_J35Z |
|
Hersteller: onsemi
Description: RF MOSFET JFET 15V TO92-3
Voltage - Test: 15 V
Voltage - Rated: 30 V
Part Status: Obsolete
Supplier Device Package: TO-92-3
Configuration: N-Channel
Frequency: 1kHz
Mounting Type: Through Hole
Current Rating (Amps): 8mA
Package / Case: TO-226-3, TO-92-3 (TO-226AA) Formed Leads
Packaging: Bulk
Noise Figure: 2dB
Technology: JFET
Description: RF MOSFET JFET 15V TO92-3
Voltage - Test: 15 V
Voltage - Rated: 30 V
Part Status: Obsolete
Supplier Device Package: TO-92-3
Configuration: N-Channel
Frequency: 1kHz
Mounting Type: Through Hole
Current Rating (Amps): 8mA
Package / Case: TO-226-3, TO-92-3 (TO-226AA) Formed Leads
Packaging: Bulk
Noise Figure: 2dB
Technology: JFET
Produkt ist nicht verfügbar
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Stück im Wert von UAH
| 2N5953_J35Z |
|
Hersteller: onsemi
Description: RF MOSFET JFET 15V TO92-3
Configuration: N-Channel
Frequency: 1kHz
Mounting Type: Through Hole
Current Rating (Amps): 5mA
Package / Case: TO-226-3, TO-92-3 (TO-226AA) Formed Leads
Packaging: Bulk
Voltage - Test: 15 V
Voltage - Rated: 30 V
Part Status: Obsolete
Supplier Device Package: TO-92-3
Noise Figure: 2dB
Technology: JFET
Description: RF MOSFET JFET 15V TO92-3
Configuration: N-Channel
Frequency: 1kHz
Mounting Type: Through Hole
Current Rating (Amps): 5mA
Package / Case: TO-226-3, TO-92-3 (TO-226AA) Formed Leads
Packaging: Bulk
Voltage - Test: 15 V
Voltage - Rated: 30 V
Part Status: Obsolete
Supplier Device Package: TO-92-3
Noise Figure: 2dB
Technology: JFET
Produkt ist nicht verfügbar
Mindestbestellmenge: 2000 Stücke
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| 2N7002_NB9G002 |
|
Hersteller: onsemi
Description: MOSFET N-CH 60V 115MA SOT-23
Input Capacitance (Ciss) (Max) @ Vds: 50 pF @ 25 V
Drain to Source Voltage (Vdss): 60 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 5V, 10V
Part Status: Obsolete
Supplier Device Package: SOT-23-3
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Power Dissipation (Max): 200mW (Ta)
Rds On (Max) @ Id, Vgs: 7.5Ohm @ 500mA, 10V
Current - Continuous Drain (Id) @ 25°C: 115mA (Ta)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-236-3, SC-59, SOT-23-3
Packaging: Tape & Reel (TR)
Description: MOSFET N-CH 60V 115MA SOT-23
Input Capacitance (Ciss) (Max) @ Vds: 50 pF @ 25 V
Drain to Source Voltage (Vdss): 60 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 5V, 10V
Part Status: Obsolete
Supplier Device Package: SOT-23-3
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Power Dissipation (Max): 200mW (Ta)
Rds On (Max) @ Id, Vgs: 7.5Ohm @ 500mA, 10V
Current - Continuous Drain (Id) @ 25°C: 115mA (Ta)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-236-3, SC-59, SOT-23-3
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar
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| 4N26M_F132 |
|
Hersteller: onsemi
Description: OPTOISO 4.17KV TRANS W/BASE 6DIP
Packaging: Bulk
Package / Case: 6-DIP (0.300", 7.62mm)
Output Type: Transistor with Base
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 100°C
Voltage - Forward (Vf) (Typ): 1.18V
Input Type: DC
Voltage - Isolation: 4170Vrms
Current Transfer Ratio (Min): 20% @ 10mA
Vce Saturation (Max): 500mV
Supplier Device Package: 6-DIP
Voltage - Output (Max): 30V
Turn On / Turn Off Time (Typ): 2µs, 2µs
Part Status: Obsolete
Number of Channels: 1
Current - DC Forward (If) (Max): 60 mA
Description: OPTOISO 4.17KV TRANS W/BASE 6DIP
Packaging: Bulk
Package / Case: 6-DIP (0.300", 7.62mm)
Output Type: Transistor with Base
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 100°C
Voltage - Forward (Vf) (Typ): 1.18V
Input Type: DC
Voltage - Isolation: 4170Vrms
Current Transfer Ratio (Min): 20% @ 10mA
Vce Saturation (Max): 500mV
Supplier Device Package: 6-DIP
Voltage - Output (Max): 30V
Turn On / Turn Off Time (Typ): 2µs, 2µs
Part Status: Obsolete
Number of Channels: 1
Current - DC Forward (If) (Max): 60 mA
Produkt ist nicht verfügbar
Mindestbestellmenge: 1000 Stücke
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| 4N32SVM |
|
Hersteller: onsemi
Description: OPTOISO 4.17KV DARL W/BASE 6SMD
Vce Saturation (Max): 1V
Current Transfer Ratio (Min): 500% @ 10mA
Voltage - Isolation: 4170Vrms
Current - Output / Channel: 150mA
Input Type: DC
Voltage - Forward (Vf) (Typ): 1.2V
Operating Temperature: -40°C ~ 100°C
Mounting Type: Surface Mount
Output Type: Darlington with Base
Package / Case: 6-SMD, Gull Wing
Packaging: Bulk
Current - DC Forward (If) (Max): 80 mA
Number of Channels: 1
Part Status: Obsolete
Turn On / Turn Off Time (Typ): 5µs, 100µs (Max)
Voltage - Output (Max): 30V
Supplier Device Package: 6-SMD
Description: OPTOISO 4.17KV DARL W/BASE 6SMD
Vce Saturation (Max): 1V
Current Transfer Ratio (Min): 500% @ 10mA
Voltage - Isolation: 4170Vrms
Current - Output / Channel: 150mA
Input Type: DC
Voltage - Forward (Vf) (Typ): 1.2V
Operating Temperature: -40°C ~ 100°C
Mounting Type: Surface Mount
Output Type: Darlington with Base
Package / Case: 6-SMD, Gull Wing
Packaging: Bulk
Current - DC Forward (If) (Max): 80 mA
Number of Channels: 1
Part Status: Obsolete
Turn On / Turn Off Time (Typ): 5µs, 100µs (Max)
Voltage - Output (Max): 30V
Supplier Device Package: 6-SMD
Produkt ist nicht verfügbar
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| 4N33TVM |
|
Hersteller: onsemi
Description: OPTOISO 4.17KV DARL W/BASE 6-DIP
Packaging: Tube
Package / Case: 6-DIP (0.400", 10.16mm)
Output Type: Darlington with Base
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 100°C
Voltage - Forward (Vf) (Typ): 1.2V
Input Type: DC
Current - Output / Channel: 150mA
Voltage - Isolation: 4170Vrms
Current Transfer Ratio (Min): 500% @ 10mA
Vce Saturation (Max): 1V
Supplier Device Package: 6-DIP
Voltage - Output (Max): 30V
Turn On / Turn Off Time (Typ): 5µs, 100µs (Max)
Part Status: Active
Number of Channels: 1
Current - DC Forward (If) (Max): 80 mA
Description: OPTOISO 4.17KV DARL W/BASE 6-DIP
Packaging: Tube
Package / Case: 6-DIP (0.400", 10.16mm)
Output Type: Darlington with Base
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 100°C
Voltage - Forward (Vf) (Typ): 1.2V
Input Type: DC
Current - Output / Channel: 150mA
Voltage - Isolation: 4170Vrms
Current Transfer Ratio (Min): 500% @ 10mA
Vce Saturation (Max): 1V
Supplier Device Package: 6-DIP
Voltage - Output (Max): 30V
Turn On / Turn Off Time (Typ): 5µs, 100µs (Max)
Part Status: Active
Number of Channels: 1
Current - DC Forward (If) (Max): 80 mA
Produkt ist nicht verfügbar
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| 4N35M_F132 |
|
Hersteller: onsemi
Description: OPTOISO 4.17KV TRANS W/BASE 6DIP
Packaging: Bulk
Package / Case: 6-DIP (0.300", 7.62mm)
Output Type: Transistor with Base
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 100°C
Voltage - Forward (Vf) (Typ): 1.18V
Input Type: DC
Voltage - Isolation: 4170Vrms
Current Transfer Ratio (Min): 100% @ 10mA
Vce Saturation (Max): 300mV
Supplier Device Package: 6-DIP
Voltage - Output (Max): 30V
Turn On / Turn Off Time (Typ): 2µs, 2µs
Part Status: Obsolete
Number of Channels: 1
Current - DC Forward (If) (Max): 60 mA
Description: OPTOISO 4.17KV TRANS W/BASE 6DIP
Packaging: Bulk
Package / Case: 6-DIP (0.300", 7.62mm)
Output Type: Transistor with Base
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 100°C
Voltage - Forward (Vf) (Typ): 1.18V
Input Type: DC
Voltage - Isolation: 4170Vrms
Current Transfer Ratio (Min): 100% @ 10mA
Vce Saturation (Max): 300mV
Supplier Device Package: 6-DIP
Voltage - Output (Max): 30V
Turn On / Turn Off Time (Typ): 2µs, 2µs
Part Status: Obsolete
Number of Channels: 1
Current - DC Forward (If) (Max): 60 mA
Produkt ist nicht verfügbar
Mindestbestellmenge: 1000 Stücke
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