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FDP047N08 FDP047N08 onsemi fdp047n08-d.pdf Description: MOSFET N-CH 75V 164A TO220-3
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 164A (Tc)
Rds On (Max) @ Id, Vgs: 4.7mOhm @ 80A, 10V
Power Dissipation (Max): 268W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 250µA
Supplier Device Package: TO-220-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 75 V
Gate Charge (Qg) (Max) @ Vgs: 152 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 9415 pF @ 25 V
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50+3.99 EUR
100+3.62 EUR
500+2.98 EUR
1000+2.77 EUR
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FFA40UP35STU FFA40UP35STU onsemi ffa40up35s-d.pdf Description: DIODE GEN PURP 350V 40A TO3PN
Current - Reverse Leakage @ Vr: 100 µA @ 350 V
Voltage - Forward (Vf) (Max) @ If: 1.6 V @ 40 A
Voltage - DC Reverse (Vr) (Max): 350 V
Operating Temperature - Junction: -65°C ~ 150°C
Supplier Device Package: TO-3PN
Current - Average Rectified (Io): 40A
Technology: Standard
Reverse Recovery Time (trr): 55 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Through Hole
Package / Case: TO-3P-3, SC-65-3
Packaging: Tube
Produkt ist nicht verfügbar
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FGH40N60SFDTU FGH40N60SFDTU onsemi fgh40n60sfdtu-f085-d.pdf Description: IGBT FIELD STOP 600V 80A TO247
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 45 ns
Vce(on) (Max) @ Vge, Ic: 2.9V @ 15V, 40A
Supplier Device Package: TO-247-3
IGBT Type: Field Stop
Td (on/off) @ 25°C: 25ns/115ns
Switching Energy: 1.13mJ (on), 310µJ (off)
Test Condition: 400V, 40A, 10Ohm, 15V
Gate Charge: 120 nC
Part Status: Active
Current - Collector (Ic) (Max): 80 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 120 A
Power - Max: 290 W
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FGH40N60UFDTU FGH40N60UFDTU onsemi fgh40n60ufd-d.pdf Description: IGBT FIELD STOP 600V 80A TO247
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 45 ns
Vce(on) (Max) @ Vge, Ic: 2.4V @ 15V, 40A
Supplier Device Package: TO-247-3
IGBT Type: Field Stop
Td (on/off) @ 25°C: 24ns/112ns
Switching Energy: 1.19mJ (on), 460µJ (off)
Test Condition: 400V, 40A, 10Ohm, 15V
Gate Charge: 120 nC
Part Status: Active
Current - Collector (Ic) (Max): 80 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 120 A
Power - Max: 290 W
Produkt ist nicht verfügbar
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FQH8N100C FQH8N100C onsemi fqh8n100c-d.pdf Description: MOSFET N-CH 1000V 8A TO247-3
Input Capacitance (Ciss) (Max) @ Vds: 3220 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 70 nC @ 10 V
Drain to Source Voltage (Vdss): 1000 V
Vgs (Max): ±30V
Drive Voltage (Max Rds On, Min Rds On): 10V
Supplier Device Package: TO-247-3
Vgs(th) (Max) @ Id: 5V @ 250µA
Power Dissipation (Max): 225W (Tc)
Rds On (Max) @ Id, Vgs: 1.45Ohm @ 4A, 10V
Current - Continuous Drain (Id) @ 25°C: 8A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-247-3
Packaging: Tube
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FDB3502 FDB3502 onsemi fdb3502-d.pdf Description: MOSFET N-CH 75V 6A/14A TO263AB
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 6A (Ta), 14A (Tc)
Rds On (Max) @ Id, Vgs: 47mOhm @ 6A, 10V
Power Dissipation (Max): 3.1W (Ta), 41W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 250µA
Supplier Device Package: TO-263 (D2Pak)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 75 V
Gate Charge (Qg) (Max) @ Vgs: 15 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 815 pF @ 40 V
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FDD5353 FDD5353 onsemi FDD5353-D.PDF Description: MOSFET N-CH 60V 11.5A/50A DPAK
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 155°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 11.5A (Ta), 50A (Tc)
Rds On (Max) @ Id, Vgs: 12.3mOhm @ 10.7A, 10V
Power Dissipation (Max): 3.1W (Ta), 69W (Tc)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: TO-252AA
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 65 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3215 pF @ 30 V
Produkt ist nicht verfügbar
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FDMC4435BZ FDMC4435BZ onsemi fdmc4435bz-d.pdf Description: MOSFET P-CH 30V 8.5A/18A 8MLP
Packaging: Cut Tape (CT)
Package / Case: 8-PowerWDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 8.5A (Ta), 18A (Tc)
Rds On (Max) @ Id, Vgs: 20mOhm @ 8.5A, 10V
Power Dissipation (Max): 2.3W (Ta), 31W (Tc)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: 8-MLP (3.3x3.3)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±25V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 46 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2045 pF @ 15 V
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FDMC8462 FDMC8462 onsemi fdmc8462-d.pdf Description: MOSFET N-CH 40V 14A/20A POWER33
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 14A (Ta), 20A (Tc)
Rds On (Max) @ Id, Vgs: 5.8mOhm @ 13.5A, 10V
Power Dissipation (Max): 2W (Ta), 41W (Tc)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: Power33
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 43 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2660 pF @ 20 V
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FDMS3662 FDMS3662 onsemi fdms3662-d.pdf Description: MOSFET N-CH 100V 8.9A/49A 8PQFN
Input Capacitance (Ciss) (Max) @ Vds: 4620 pF @ 50 V
Gate Charge (Qg) (Max) @ Vgs: 75 nC @ 10 V
Drain to Source Voltage (Vdss): 100 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Supplier Device Package: 8-PQFN (5x6)
Vgs(th) (Max) @ Id: 4.5V @ 250µA
Power Dissipation (Max): 2.5W (Ta), 104W (Tc)
Rds On (Max) @ Id, Vgs: 14.8mOhm @ 8.9A, 10V
Current - Continuous Drain (Id) @ 25°C: 8.9A (Ta), 49A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-PowerTDFN
Packaging: Cut Tape (CT)
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10+4.58 EUR
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FDMS5352 FDMS5352 onsemi fdms5352-d.pdf Description: MOSFET N-CH 60V 13.6A/49A 8PQFN
Input Capacitance (Ciss) (Max) @ Vds: 6940 pF @ 30 V
Gate Charge (Qg) (Max) @ Vgs: 131 nC @ 10 V
Drain to Source Voltage (Vdss): 60 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Part Status: Active
Supplier Device Package: 8-PQFN (5x6)
Vgs(th) (Max) @ Id: 3V @ 250µA
Power Dissipation (Max): 2.5W (Ta), 104W (Tc)
Rds On (Max) @ Id, Vgs: 6.7mOhm @ 13.6A, 10V
Current - Continuous Drain (Id) @ 25°C: 13.6A (Ta), 49A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-PowerTDFN
Packaging: Cut Tape (CT)
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CAT885ZI-SA-GT3 CAT885ZI-SA-GT3 onsemi design-resources?notFound=CAT885-D.PDF Description: IC SUPERVSR 5CH 2.87/1.68V 8MSOP
Produkt ist nicht verfügbar
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CAT24C256WI-GT3 CAT24C256WI-GT3 onsemi CAT24C256-D.PDF Description: IC EEPROM 256KBIT I2C 1MHZ 8SOIC
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Memory Size: 256Kbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 1.8V ~ 5.5V
Technology: EEPROM
Clock Frequency: 1 MHz
Memory Format: EEPROM
Supplier Device Package: 8-SOIC
Part Status: Active
Write Cycle Time - Word, Page: 5ms
Memory Interface: I2C
Access Time: 500 ns
Memory Organization: 32K x 8
DigiKey Programmable: Verified
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CAT24C256YI-GT3 CAT24C256YI-GT3 onsemi CAT24C256-D.PDF Description: IC EEPROM 256KBIT I2C 8TSSOP
Packaging: Tape & Reel (TR)
Package / Case: 8-TSSOP (0.173", 4.40mm Width)
Mounting Type: Surface Mount
Memory Size: 256Kbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 1.8V ~ 5.5V
Technology: EEPROM
Clock Frequency: 1 MHz
Memory Format: EEPROM
Supplier Device Package: 8-TSSOP
Part Status: Active
Write Cycle Time - Word, Page: 5ms
Memory Interface: I2C
Access Time: 500 ns
Memory Organization: 32K x 8
DigiKey Programmable: Verified
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CAT24C128YI-GT3 CAT24C128YI-GT3 onsemi CAT24C128-D.PDF Description: IC EEPROM 128KBIT I2C 8TSSOP
Packaging: Tape & Reel (TR)
Package / Case: 8-TSSOP (0.173", 4.40mm Width)
Mounting Type: Surface Mount
Memory Size: 128Kbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 1.8V ~ 5.5V
Technology: EEPROM
Clock Frequency: 1 MHz
Memory Format: EEPROM
Supplier Device Package: 8-TSSOP
Part Status: Active
Write Cycle Time - Word, Page: 5ms
Memory Interface: I2C
Access Time: 400 ns
Memory Organization: 16K x 8
DigiKey Programmable: Not Verified
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FSBF10CH60BTL FSBF10CH60BTL onsemi FSBF10CH60BTL.pdf Description: MODULE SPM 600V 10A 3PH SPM27-JB
Produkt ist nicht verfügbar
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FSQ0765RQWDTU FSQ0765RQWDTU onsemi fsq0765rq-d.pdf Description: IC OFFLINE SW FLBACK TO220F-6L
Power (Watts): 90 W
Part Status: Obsolete
Control Features: Sync
Voltage - Start Up: 12 V
Fault Protection: Current Limiting, Over Load, Over Temperature, Over Voltage, Short Circuit
Supplier Device Package: TO-220F-6L (L-Forming)
Voltage - Supply (Vcc/Vdd): 8V ~ 20V
Topology: Flyback
Output Isolation: Isolated
Voltage - Breakdown: 650V
Internal Switch(s): Yes
Frequency - Switching: 48kHz ~ 67kHz
Operating Temperature: -25°C ~ 85°C (TA)
Mounting Type: Through Hole
Package / Case: TO-220-6 Full Pack, Formed Leads
Packaging: Tube
Produkt ist nicht verfügbar
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2SA1943OTU 2SA1943OTU onsemi FJL4215-D.PDF Description: TRANS PNP 250V 17A TO-264-3
Packaging: Tube
Package / Case: TO-264-3, TO-264AA
Mounting Type: Through Hole
Transistor Type: PNP
Operating Temperature: -50°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 3V @ 800mA, 8A
Current - Collector Cutoff (Max): 5µA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 1A, 5V
Frequency - Transition: 30MHz
Supplier Device Package: TO-264-3
Part Status: Active
Current - Collector (Ic) (Max): 17 A
Voltage - Collector Emitter Breakdown (Max): 250 V
Power - Max: 150 W
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2SA1962OTU 2SA1962OTU onsemi FJA4213-D.pdf Description: TRANS PNP 250V 17A TO-3P
Packaging: Tube
Package / Case: TO-3P-3, SC-65-3
Mounting Type: Through Hole
Transistor Type: PNP
Operating Temperature: -55°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 3V @ 800mA, 8A
Current - Collector Cutoff (Max): 5µA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 1A, 5V
Frequency - Transition: 30MHz
Supplier Device Package: TO-3P
Part Status: Obsolete
Current - Collector (Ic) (Max): 17 A
Voltage - Collector Emitter Breakdown (Max): 250 V
Power - Max: 130 W
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2SC5242RTU 2SC5242RTU onsemi 2SC5242%2CFJA4313.pdf Description: TRANS NPN 250V 17A TO-3P
Packaging: Tube
Package / Case: TO-3P-3, SC-65-3
Mounting Type: Through Hole
Transistor Type: NPN
Operating Temperature: -55°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 3V @ 800mA, 8A
Current - Collector Cutoff (Max): 5µA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 55 @ 1A, 5V
Frequency - Transition: 30MHz
Supplier Device Package: TO-3P
Part Status: Obsolete
Current - Collector (Ic) (Max): 17 A
Voltage - Collector Emitter Breakdown (Max): 250 V
Power - Max: 130 W
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2SC5242OTU 2SC5242OTU onsemi fja4313-d.pdf Description: TRANS NPN 250V 17A TO-3P
Packaging: Tube
Package / Case: TO-3P-3, SC-65-3
Mounting Type: Through Hole
Transistor Type: NPN
Operating Temperature: -55°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 3V @ 800mA, 8A
Current - Collector Cutoff (Max): 5µA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 1A, 5V
Frequency - Transition: 30MHz
Supplier Device Package: TO-3P
Part Status: Active
Current - Collector (Ic) (Max): 17 A
Voltage - Collector Emitter Breakdown (Max): 250 V
Power - Max: 130 W
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2SA1381CSTU 2SA1381CSTU onsemi ksa1381-d.pdf Description: TRANS PNP 300V 0.1A TO-126-3
Packaging: Tube
Package / Case: TO-225AA, TO-126-3
Mounting Type: Through Hole
Transistor Type: PNP
Operating Temperature: -55°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 600mV @ 2mA, 20mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 10mA, 10V
Frequency - Transition: 150MHz
Supplier Device Package: TO-126-3
Part Status: Obsolete
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 300 V
Power - Max: 7 W
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2SA1381DSTU 2SA1381DSTU onsemi ksa1381-d.pdf Description: TRANS PNP 300V 0.1A TO-126-3
Packaging: Tube
Package / Case: TO-225AA, TO-126-3
Mounting Type: Through Hole
Transistor Type: PNP
Operating Temperature: -55°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 600mV @ 2mA, 20mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 60 @ 10mA, 10V
Frequency - Transition: 150MHz
Supplier Device Package: TO-126-3
Part Status: Obsolete
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 300 V
Power - Max: 7 W
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2SA1381ESTU 2SA1381ESTU onsemi ksa1381-d.pdf Description: TRANS PNP 300V 0.1A TO-126-3
Packaging: Tube
Package / Case: TO-225AA, TO-126-3
Mounting Type: Through Hole
Transistor Type: PNP
Operating Temperature: -55°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 600mV @ 2mA, 20mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 10mA, 10V
Frequency - Transition: 150MHz
Supplier Device Package: TO-126-3
Part Status: Obsolete
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 300 V
Power - Max: 7 W
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2SA1381FSTU 2SA1381FSTU onsemi ksa1381-d.pdf Description: TRANS PNP 300V 0.1A TO-126-3
Packaging: Tube
Package / Case: TO-225AA, TO-126-3
Mounting Type: Through Hole
Transistor Type: PNP
Operating Temperature: -55°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 600mV @ 2mA, 20mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 160 @ 10mA, 10V
Frequency - Transition: 150MHz
Supplier Device Package: TO-126-3
Part Status: Obsolete
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 300 V
Power - Max: 7 W
Produkt ist nicht verfügbar
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FAN7387MX FAN7387MX onsemi fan7387-d.pdf Description: IC BALLAST CNTRL 22KHZ 8SOP
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Frequency: 18kHz ~ 22kHz
Type: Ballast Controller
Operating Temperature: -40°C ~ 125°C
Voltage - Supply: 11V ~ 14V
Supplier Device Package: 8-SOIC
Dimming: No
Part Status: Last Time Buy
Current - Supply: 800 µA
Produkt ist nicht verfügbar
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FAN7387N FAN7387N onsemi fan7387-d.pdf Description: IC BALLAST CNTRL 22KHZ 8DIP
Current - Supply: 800 µA
Part Status: Obsolete
Dimming: No
Supplier Device Package: 8-DIP
Voltage - Supply: 11V ~ 14V
Operating Temperature: -40°C ~ 125°C
Type: Ballast Controller
Frequency: 18kHz ~ 22kHz
Mounting Type: Through Hole
Package / Case: 8-DIP (0.300", 7.62mm)
Packaging: Tube
Produkt ist nicht verfügbar
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FAN7390M1X FAN7390M1X onsemi fan7390-d.pdf Description: IC GATE DRVR HALF-BRIDGE 14SOP
DigiKey Programmable: Not Verified
Part Status: Last Time Buy
Current - Peak Output (Source, Sink): 4.5A, 4.5A
Logic Voltage - VIL, VIH: 1.2V, 2.5V
Gate Type: IGBT, N-Channel MOSFET
Number of Drivers: 2
Driven Configuration: Half-Bridge
Channel Type: Independent
Rise / Fall Time (Typ): 25ns, 20ns
Supplier Device Package: 14-SOP
High Side Voltage - Max (Bootstrap): 600 V
Input Type: Non-Inverting
Voltage - Supply: 10V ~ 22V
Operating Temperature: -40°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 14-SOIC (0.154", 3.90mm Width)
Packaging: Tape & Reel (TR)
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FAN7390MX FAN7390MX onsemi FAN7390-D.PDF Description: IC GATE DRVR HALF-BRIDGE 8SOIC
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Voltage - Supply: 10V ~ 22V
Input Type: Non-Inverting
High Side Voltage - Max (Bootstrap): 600 V
Supplier Device Package: 8-SOIC
Rise / Fall Time (Typ): 25ns, 20ns
Channel Type: Independent
Driven Configuration: Half-Bridge
Number of Drivers: 2
Gate Type: IGBT, MOSFET (N-Channel)
Logic Voltage - VIL, VIH: 1.2V, 2.5V
Current - Peak Output (Source, Sink): 4.5A, 4.5A
Part Status: Last Time Buy
DigiKey Programmable: Not Verified
Produkt ist nicht verfügbar
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FJP1943OTU FJP1943OTU onsemi fjp1943-d.pdf Description: TRANS PNP 230V 15A TO-220-3
Current - Collector Cutoff (Max): 5µA (ICBO)
Vce Saturation (Max) @ Ib, Ic: 3V @ 800mA, 8A
Operating Temperature: -50°C ~ 150°C (TJ)
Transistor Type: PNP
Mounting Type: Through Hole
Package / Case: TO-220-3
Packaging: Tube
Power - Max: 80 W
Voltage - Collector Emitter Breakdown (Max): 230 V
Current - Collector (Ic) (Max): 15 A
Part Status: Obsolete
Supplier Device Package: TO-220-3
Frequency - Transition: 30MHz
DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 1A, 5V
Produkt ist nicht verfügbar
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FAN7387MX FAN7387MX onsemi fan7387-d.pdf Description: IC BALLAST CNTRL 22KHZ 8SOP
Packaging: Cut Tape (CT)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Frequency: 18kHz ~ 22kHz
Type: Ballast Controller
Operating Temperature: -40°C ~ 125°C
Voltage - Supply: 11V ~ 14V
Supplier Device Package: 8-SOIC
Dimming: No
Part Status: Last Time Buy
Current - Supply: 800 µA
Produkt ist nicht verfügbar
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FAN7390M1X FAN7390M1X onsemi fan7390-d.pdf Description: IC GATE DRVR HALF-BRIDGE 14SOP
Packaging: Cut Tape (CT)
Package / Case: 14-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Voltage - Supply: 10V ~ 22V
Input Type: Non-Inverting
High Side Voltage - Max (Bootstrap): 600 V
Supplier Device Package: 14-SOP
Rise / Fall Time (Typ): 25ns, 20ns
Channel Type: Independent
Driven Configuration: Half-Bridge
Number of Drivers: 2
Gate Type: IGBT, N-Channel MOSFET
Logic Voltage - VIL, VIH: 1.2V, 2.5V
Current - Peak Output (Source, Sink): 4.5A, 4.5A
Part Status: Last Time Buy
DigiKey Programmable: Not Verified
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25+4.47 EUR
100+3.58 EUR
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500+3.05 EUR
1000+2.42 EUR
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FAN7390MX FAN7390MX onsemi FAN7390-D.PDF Description: IC GATE DRVR HALF-BRIDGE 8SOIC
Packaging: Cut Tape (CT)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Voltage - Supply: 10V ~ 22V
Input Type: Non-Inverting
High Side Voltage - Max (Bootstrap): 600 V
Supplier Device Package: 8-SOIC
Rise / Fall Time (Typ): 25ns, 20ns
Channel Type: Independent
Driven Configuration: Half-Bridge
Number of Drivers: 2
Gate Type: IGBT, MOSFET (N-Channel)
Logic Voltage - VIL, VIH: 1.2V, 2.5V
Current - Peak Output (Source, Sink): 4.5A, 4.5A
Part Status: Last Time Buy
DigiKey Programmable: Not Verified
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100+2.17 EUR
250+2.03 EUR
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FAN7388MX FAN7388MX onsemi fan7388-d.pdf Description: IC GATE DRVR HALF-BRIDGE 20SOIC
Packaging: Tape & Reel (TR)
Package / Case: 20-SOIC (0.295", 7.50mm Width)
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Voltage - Supply: 10V ~ 20V
Input Type: Non-Inverting
High Side Voltage - Max (Bootstrap): 600 V
Supplier Device Package: 20-SOIC
Rise / Fall Time (Typ): 50ns, 30ns
Channel Type: 3-Phase
Driven Configuration: Half-Bridge
Number of Drivers: 6
Gate Type: IGBT, MOSFET (N-Channel)
Logic Voltage - VIL, VIH: 1V, 2.5V
Current - Peak Output (Source, Sink): 350mA, 650mA
Part Status: Last Time Buy
DigiKey Programmable: Not Verified
Produkt ist nicht verfügbar
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FAN7888MX FAN7888MX onsemi fan7888-d.pdf Description: IC GATE DRVR HALF-BRIDGE 20SOIC
Packaging: Tape & Reel (TR)
Package / Case: 20-SOIC (0.295", 7.50mm Width)
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Voltage - Supply: 10V ~ 20V
Input Type: Non-Inverting
High Side Voltage - Max (Bootstrap): 200 V
Supplier Device Package: 20-SOIC
Rise / Fall Time (Typ): 50ns, 30ns
Channel Type: 3-Phase
Driven Configuration: Half-Bridge
Number of Drivers: 6
Gate Type: IGBT, MOSFET (N-Channel)
Logic Voltage - VIL, VIH: 1V, 2.5V
Current - Peak Output (Source, Sink): 350mA, 650mA
Part Status: Last Time Buy
DigiKey Programmable: Not Verified
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FDB024N06 FDB024N06 onsemi fdb024n06-d.pdf Description: MOSFET N-CH 60V 120A D2PAK
Input Capacitance (Ciss) (Max) @ Vds: 14885 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 226 nC @ 10 V
Drain to Source Voltage (Vdss): 60 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Active
Supplier Device Package: TO-263 (D2Pak)
Vgs(th) (Max) @ Id: 4.5V @ 250µA
Power Dissipation (Max): 395W (Tc)
Rds On (Max) @ Id, Vgs: 2.4mOhm @ 75A, 10V
Current - Continuous Drain (Id) @ 25°C: 120A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar
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FDB031N08 FDB031N08 onsemi FDB031N08-D.PDF Description: MOSFET N-CH 75V 120A D2PAK
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 120A (Tc)
Rds On (Max) @ Id, Vgs: 3.1mOhm @ 75A, 10V
Power Dissipation (Max): 375W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 250µA
Supplier Device Package: TO-263 (D2Pak)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 75 V
Gate Charge (Qg) (Max) @ Vgs: 220 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 15160 pF @ 25 V
Produkt ist nicht verfügbar
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FDMS3500 FDMS3500 onsemi fdms3500-d.pdf Description: MOSFET N-CH 75V PWR CLIP 56
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Supplier Device Package: 8-PQFN (5x6)
Vgs(th) (Max) @ Id: 3V @ 250µA
Power Dissipation (Max): 2.5W (Ta), 96W (Tc)
Rds On (Max) @ Id, Vgs: 14.5mOhm @ 11.5A, 10V
Current - Continuous Drain (Id) @ 25°C: 9.2A (Ta), 49A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-PowerTDFN
Packaging: Tape & Reel (TR)
Input Capacitance (Ciss) (Max) @ Vds: 4765 pF @ 40 V
Gate Charge (Qg) (Max) @ Vgs: 91 nC @ 10 V
Drain to Source Voltage (Vdss): 75 V
Vgs (Max): ±20V
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FDP025N06 FDP025N06 onsemi fdp025n06-d.pdf Description: MOSFET N-CH 60V 120A TO220-3
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 120A (Tc)
Rds On (Max) @ Id, Vgs: 2.5mOhm @ 75A, 10V
Power Dissipation (Max): 395W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 250µA
Supplier Device Package: TO-220-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 226 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 14885 pF @ 25 V
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FDP047N10 FDP047N10 onsemi fdp047n10-d.pdf Description: MOSFET N-CH 100V 120A TO220-3
Input Capacitance (Ciss) (Max) @ Vds: 15265 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 210 nC @ 10 V
Drain to Source Voltage (Vdss): 100 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Active
Supplier Device Package: TO-220-3
Vgs(th) (Max) @ Id: 4.5V @ 250µA
Power Dissipation (Max): 375W (Tc)
Rds On (Max) @ Id, Vgs: 4.7mOhm @ 75A, 10V
Current - Continuous Drain (Id) @ 25°C: 120A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-220-3
Packaging: Tube
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FDS5351 FDS5351 onsemi fds5351-d.pdf Description: MOSFET N-CH 60V 6.1A 8SOIC
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 6.1A (Ta)
Rds On (Max) @ Id, Vgs: 35mOhm @ 6.1A, 10V
Power Dissipation (Max): 5W (Ta)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: 8-SOIC
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 27 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1310 pF @ 30 V
auf Bestellung 15000 Stücke:
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FFP08S60SNTU FFP08S60SNTU onsemi ffp08s60sn-d.pdf Description: DIODE GEN PURP 600V 8A TO220-2L
Voltage - Forward (Vf) (Max) @ If: 3.4 V @ 8 A
Voltage - DC Reverse (Vr) (Max): 600 V
Part Status: Obsolete
Operating Temperature - Junction: -65°C ~ 150°C
Supplier Device Package: TO-220-2L
Current - Average Rectified (Io): 8A
Technology: Standard
Reverse Recovery Time (trr): 32 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Through Hole
Package / Case: TO-220-2
Packaging: Tube
Current - Reverse Leakage @ Vr: 100 µA @ 600 V
Produkt ist nicht verfügbar
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HGT1S7N60A4DS HGT1S7N60A4DS onsemi HGT%28G%2CP%2C1S%297N60A4D%28S%29.pdf Description: IGBT 600V 34A TO-263
Packaging: Tube
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 34 ns
Vce(on) (Max) @ Vge, Ic: 2.7V @ 15V, 7A
Supplier Device Package: TO-263 (D2Pak)
Td (on/off) @ 25°C: 11ns/100ns
Switching Energy: 55µJ (on), 60µJ (off)
Test Condition: 390V, 7A, 25Ohm, 15V
Gate Charge: 37 nC
Part Status: Obsolete
Current - Collector (Ic) (Max): 34 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 56 A
Power - Max: 125 W
Produkt ist nicht verfügbar
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HGT1S12N60A4S9A HGT1S12N60A4S9A onsemi HGTG12N60A4.pdf Description: IGBT 600V 54A TO-263
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 2.7V @ 15V, 12A
Supplier Device Package: TO-263 (D2Pak)
Td (on/off) @ 25°C: 17ns/96ns
Switching Energy: 55µJ (on), 50µJ (off)
Test Condition: 390V, 12A, 10Ohm, 15V
Gate Charge: 78 nC
Part Status: Obsolete
Current - Collector (Ic) (Max): 54 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 96 A
Power - Max: 167 W
Produkt ist nicht verfügbar
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FAN7388MX FAN7388MX onsemi fan7388-d.pdf Description: IC GATE DRVR HALF-BRIDGE 20SOIC
Packaging: Cut Tape (CT)
Package / Case: 20-SOIC (0.295", 7.50mm Width)
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Voltage - Supply: 10V ~ 20V
Input Type: Non-Inverting
High Side Voltage - Max (Bootstrap): 600 V
Supplier Device Package: 20-SOIC
Rise / Fall Time (Typ): 50ns, 30ns
Channel Type: 3-Phase
Driven Configuration: Half-Bridge
Number of Drivers: 6
Gate Type: IGBT, MOSFET (N-Channel)
Logic Voltage - VIL, VIH: 1V, 2.5V
Current - Peak Output (Source, Sink): 350mA, 650mA
Part Status: Last Time Buy
DigiKey Programmable: Not Verified
auf Bestellung 454 Stücke:
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25+3.49 EUR
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FAN7888MX FAN7888MX onsemi fan7888-d.pdf Description: IC GATE DRVR HALF-BRIDGE 20SOIC
Packaging: Cut Tape (CT)
Package / Case: 20-SOIC (0.295", 7.50mm Width)
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Voltage - Supply: 10V ~ 20V
Input Type: Non-Inverting
High Side Voltage - Max (Bootstrap): 200 V
Supplier Device Package: 20-SOIC
Rise / Fall Time (Typ): 50ns, 30ns
Channel Type: 3-Phase
Driven Configuration: Half-Bridge
Number of Drivers: 6
Gate Type: IGBT, MOSFET (N-Channel)
Logic Voltage - VIL, VIH: 1V, 2.5V
Current - Peak Output (Source, Sink): 350mA, 650mA
Part Status: Last Time Buy
DigiKey Programmable: Not Verified
auf Bestellung 5358 Stücke:
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5+4.94 EUR
10+3.69 EUR
25+3.38 EUR
100+3.03 EUR
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FDB024N06 FDB024N06 onsemi fdb024n06-d.pdf Description: MOSFET N-CH 60V 120A D2PAK
Input Capacitance (Ciss) (Max) @ Vds: 14885 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 226 nC @ 10 V
Drain to Source Voltage (Vdss): 60 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Active
Supplier Device Package: TO-263 (D2Pak)
Vgs(th) (Max) @ Id: 4.5V @ 250µA
Power Dissipation (Max): 395W (Tc)
Rds On (Max) @ Id, Vgs: 2.4mOhm @ 75A, 10V
Current - Continuous Drain (Id) @ 25°C: 120A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Packaging: Cut Tape (CT)
Produkt ist nicht verfügbar
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FDB031N08 FDB031N08 onsemi FDB031N08-D.PDF Description: MOSFET N-CH 75V 120A D2PAK
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 120A (Tc)
Rds On (Max) @ Id, Vgs: 3.1mOhm @ 75A, 10V
Power Dissipation (Max): 375W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 250µA
Supplier Device Package: TO-263 (D2Pak)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 75 V
Gate Charge (Qg) (Max) @ Vgs: 220 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 15160 pF @ 25 V
Produkt ist nicht verfügbar
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FDMS3500 FDMS3500 onsemi fdms3500-d.pdf Description: MOSFET N-CH 75V PWR CLIP 56
Input Capacitance (Ciss) (Max) @ Vds: 4765 pF @ 40 V
Gate Charge (Qg) (Max) @ Vgs: 91 nC @ 10 V
Drain to Source Voltage (Vdss): 75 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Supplier Device Package: 8-PQFN (5x6)
Vgs(th) (Max) @ Id: 3V @ 250µA
Power Dissipation (Max): 2.5W (Ta), 96W (Tc)
Rds On (Max) @ Id, Vgs: 14.5mOhm @ 11.5A, 10V
Current - Continuous Drain (Id) @ 25°C: 9.2A (Ta), 49A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-PowerTDFN
Packaging: Cut Tape (CT)
auf Bestellung 5427 Stücke:
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6+4.11 EUR
10+3.42 EUR
100+2.71 EUR
500+2.3 EUR
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FDS5351 FDS5351 onsemi fds5351-d.pdf Description: MOSFET N-CH 60V 6.1A 8SOIC
Packaging: Cut Tape (CT)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 6.1A (Ta)
Rds On (Max) @ Id, Vgs: 35mOhm @ 6.1A, 10V
Power Dissipation (Max): 5W (Ta)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: 8-SOIC
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 27 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1310 pF @ 30 V
auf Bestellung 17592 Stücke:
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10+2.18 EUR
16+1.38 EUR
100+0.9 EUR
500+0.7 EUR
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FQD5N60CTM FQD5N60CTM onsemi fqu5n60c-d.pdf Description: MOSFET N-CH 600V 2.8A DPAK
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 2.8A (Tc)
Rds On (Max) @ Id, Vgs: 2.5Ohm @ 1.4A, 10V
Power Dissipation (Max): 2.5W (Ta), 49W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-252AA
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 19 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 670 pF @ 25 V
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FAN73833MX FAN73833MX onsemi FAN73833-D.pdf Description: IC GATE DRVR HALF-BRIDGE 8SOIC
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Voltage - Supply: 11V ~ 20V
Input Type: Non-Inverting
High Side Voltage - Max (Bootstrap): 600 V
Supplier Device Package: 8-SOIC
Rise / Fall Time (Typ): 50ns, 30ns
Channel Type: Independent
Driven Configuration: Half-Bridge
Number of Drivers: 2
Gate Type: IGBT, MOSFET (N-Channel)
Logic Voltage - VIL, VIH: 1.2V, 2.5V
Current - Peak Output (Source, Sink): 350mA, 650mA
Part Status: Last Time Buy
DigiKey Programmable: Not Verified
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FDD3510H FDD3510H onsemi fdd3510h-d.pdf Description: MOSFET N/P-CH 80V 4.3A TO252
Supplier Device Package: TO-252 (DPAK)
Vgs(th) (Max) @ Id: 4V @ 250µA
FET Feature: Logic Level Gate
Gate Charge (Qg) (Max) @ Vgs: 18nC @ 10V
Rds On (Max) @ Id, Vgs: 80mOhm @ 4.3A, 10V
Input Capacitance (Ciss) (Max) @ Vds: 800pF @ 40V
Current - Continuous Drain (Id) @ 25°C: 4.3A, 2.8A
Drain to Source Voltage (Vdss): 80V
Power - Max: 1.3W
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Configuration: N and P-Channel, Common Drain
Mounting Type: Surface Mount
Package / Case: TO-252-5, DPak (4 Leads + Tab), TO-252AD
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar
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FOD0710 FOD0710 onsemi fod0721-d.pdf Description: OPTOISO 3.75KV PUSH PULL 8SO
Current - Output / Channel: 10 mA
Number of Channels: 1
Propagation Delay tpLH / tpHL (Max): 40ns, 40ns
Common Mode Transient Immunity (Min): 20kV/µs
Rise / Fall Time (Typ): 5ns, 4.5ns
Supplier Device Package: 8-SOIC
Inputs - Side 1/Side 2: 1/0
Voltage - Isolation: 3750Vrms
Input Type: Logic
Data Rate: 12.5Mbps
Voltage - Supply: 4.5V ~ 5.5V
Operating Temperature: -40°C ~ 100°C
Mounting Type: Surface Mount
Output Type: Push-Pull, Totem Pole
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Packaging: Tube
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FOD0720 FOD0720 onsemi fod0721-d.pdf Description: OPTOISO 3.75KV PUSH PULL 8SO
Current - Output / Channel: 10 mA
Number of Channels: 1
Propagation Delay tpLH / tpHL (Max): 40ns, 40ns
Common Mode Transient Immunity (Min): 20kV/µs
Rise / Fall Time (Typ): 5ns, 4.5ns
Supplier Device Package: 8-SOIC
Inputs - Side 1/Side 2: 1/0
Voltage - Isolation: 3750Vrms
Input Type: Logic
Data Rate: 25Mbps
Voltage - Supply: 4.5V ~ 5.5V
Operating Temperature: -40°C ~ 100°C
Mounting Type: Surface Mount
Output Type: Push-Pull, Totem Pole
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Packaging: Tube
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FOD0721 FOD0721 onsemi fod0721-d.pdf Description: OPTOISO 3.75KV PUSH PULL 8SO
Current - Output / Channel: 10 mA
Number of Channels: 1
Propagation Delay tpLH / tpHL (Max): 40ns, 40ns
Common Mode Transient Immunity (Min): 20kV/µs
Rise / Fall Time (Typ): 5ns, 4.5ns
Supplier Device Package: 8-SOIC
Inputs - Side 1/Side 2: 1/0
Voltage - Isolation: 3750Vrms
Input Type: Logic
Data Rate: 25Mbps
Voltage - Supply: 4.5V ~ 5.5V
Operating Temperature: -40°C ~ 100°C
Mounting Type: Surface Mount
Output Type: Push-Pull, Totem Pole
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Packaging: Tube
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FSQ0765RSWDTU FSQ0765RSWDTU onsemi fsq0765rs-d.pdf Description: IC OFFLINE SW FLBACK TO220F-6L
Packaging: Tube
Package / Case: TO-220-6 Full Pack, Formed Leads
Mounting Type: Through Hole
Operating Temperature: -25°C ~ 85°C (TA)
Frequency - Switching: 48kHz ~ 67kHz
Internal Switch(s): Yes
Voltage - Breakdown: 650V
Output Isolation: Isolated
Topology: Flyback
Voltage - Supply (Vcc/Vdd): 8V ~ 20V
Supplier Device Package: TO-220F-6L (U-Forming)
Fault Protection: Current Limiting, Over Load, Over Temperature, Over Voltage, Short Circuit
Voltage - Start Up: 12 V
Control Features: Sync
Part Status: Obsolete
Power (Watts): 90 W
Produkt ist nicht verfügbar
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FSQ510MX FSQ510MX onsemi ONSM-S-A0003587555-1.pdf?t.download=true&u=5oefqw Description: IC OFFLINE SWITCH FLYBACK 7LSOP
Power (Watts): 9 W
Part Status: Obsolete
Control Features: Sync
Voltage - Start Up: 8.7 V
Fault Protection: Current Limiting, Over Load, Over Temperature
Supplier Device Package: 7-LSOP
Voltage - Supply (Vcc/Vdd): 6.7V ~ 20V
Topology: Flyback
Output Isolation: Isolated
Voltage - Breakdown: 700V
Internal Switch(s): Yes
Frequency - Switching: 94.3kHz ~ 132kHz
Duty Cycle: 60%
Operating Temperature: -40°C ~ 140°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-SMD (7 Leads), Gull Wing
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar
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FAN73833MX FAN73833MX onsemi FAN73833-D.pdf Description: IC GATE DRVR HALF-BRIDGE 8SOIC
Packaging: Cut Tape (CT)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Voltage - Supply: 11V ~ 20V
Input Type: Non-Inverting
High Side Voltage - Max (Bootstrap): 600 V
Supplier Device Package: 8-SOIC
Rise / Fall Time (Typ): 50ns, 30ns
Channel Type: Independent
Driven Configuration: Half-Bridge
Number of Drivers: 2
Gate Type: IGBT, MOSFET (N-Channel)
Logic Voltage - VIL, VIH: 1.2V, 2.5V
Current - Peak Output (Source, Sink): 350mA, 650mA
Part Status: Last Time Buy
DigiKey Programmable: Not Verified
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FEB154 onsemi FEB154.pdf Description: EVAL BOARD FOR FSBB20CH60
Embedded: No
Primary Attributes: Motors (AC)
Supplied Contents: Board(s)
Utilized IC / Part: FSBB20CH60
Type: Power Management
Function: Motor Controller/Driver
Packaging: Bulk
Produkt ist nicht verfügbar
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FDP047N08 fdp047n08-d.pdf
FDP047N08
Hersteller: onsemi
Description: MOSFET N-CH 75V 164A TO220-3
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 164A (Tc)
Rds On (Max) @ Id, Vgs: 4.7mOhm @ 80A, 10V
Power Dissipation (Max): 268W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 250µA
Supplier Device Package: TO-220-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 75 V
Gate Charge (Qg) (Max) @ Vgs: 152 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 9415 pF @ 25 V
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3+7.77 EUR
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FFA40UP35STU ffa40up35s-d.pdf
FFA40UP35STU
Hersteller: onsemi
Description: DIODE GEN PURP 350V 40A TO3PN
Current - Reverse Leakage @ Vr: 100 µA @ 350 V
Voltage - Forward (Vf) (Max) @ If: 1.6 V @ 40 A
Voltage - DC Reverse (Vr) (Max): 350 V
Operating Temperature - Junction: -65°C ~ 150°C
Supplier Device Package: TO-3PN
Current - Average Rectified (Io): 40A
Technology: Standard
Reverse Recovery Time (trr): 55 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Through Hole
Package / Case: TO-3P-3, SC-65-3
Packaging: Tube
Produkt ist nicht verfügbar
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FGH40N60SFDTU fgh40n60sfdtu-f085-d.pdf
FGH40N60SFDTU
Hersteller: onsemi
Description: IGBT FIELD STOP 600V 80A TO247
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 45 ns
Vce(on) (Max) @ Vge, Ic: 2.9V @ 15V, 40A
Supplier Device Package: TO-247-3
IGBT Type: Field Stop
Td (on/off) @ 25°C: 25ns/115ns
Switching Energy: 1.13mJ (on), 310µJ (off)
Test Condition: 400V, 40A, 10Ohm, 15V
Gate Charge: 120 nC
Part Status: Active
Current - Collector (Ic) (Max): 80 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 120 A
Power - Max: 290 W
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FGH40N60UFDTU fgh40n60ufd-d.pdf
FGH40N60UFDTU
Hersteller: onsemi
Description: IGBT FIELD STOP 600V 80A TO247
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 45 ns
Vce(on) (Max) @ Vge, Ic: 2.4V @ 15V, 40A
Supplier Device Package: TO-247-3
IGBT Type: Field Stop
Td (on/off) @ 25°C: 24ns/112ns
Switching Energy: 1.19mJ (on), 460µJ (off)
Test Condition: 400V, 40A, 10Ohm, 15V
Gate Charge: 120 nC
Part Status: Active
Current - Collector (Ic) (Max): 80 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 120 A
Power - Max: 290 W
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FQH8N100C fqh8n100c-d.pdf
FQH8N100C
Hersteller: onsemi
Description: MOSFET N-CH 1000V 8A TO247-3
Input Capacitance (Ciss) (Max) @ Vds: 3220 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 70 nC @ 10 V
Drain to Source Voltage (Vdss): 1000 V
Vgs (Max): ±30V
Drive Voltage (Max Rds On, Min Rds On): 10V
Supplier Device Package: TO-247-3
Vgs(th) (Max) @ Id: 5V @ 250µA
Power Dissipation (Max): 225W (Tc)
Rds On (Max) @ Id, Vgs: 1.45Ohm @ 4A, 10V
Current - Continuous Drain (Id) @ 25°C: 8A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-247-3
Packaging: Tube
auf Bestellung 323 Stücke:
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FDB3502 fdb3502-d.pdf
FDB3502
Hersteller: onsemi
Description: MOSFET N-CH 75V 6A/14A TO263AB
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 6A (Ta), 14A (Tc)
Rds On (Max) @ Id, Vgs: 47mOhm @ 6A, 10V
Power Dissipation (Max): 3.1W (Ta), 41W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 250µA
Supplier Device Package: TO-263 (D2Pak)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 75 V
Gate Charge (Qg) (Max) @ Vgs: 15 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 815 pF @ 40 V
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FDD5353 FDD5353-D.PDF
FDD5353
Hersteller: onsemi
Description: MOSFET N-CH 60V 11.5A/50A DPAK
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 155°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 11.5A (Ta), 50A (Tc)
Rds On (Max) @ Id, Vgs: 12.3mOhm @ 10.7A, 10V
Power Dissipation (Max): 3.1W (Ta), 69W (Tc)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: TO-252AA
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 65 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3215 pF @ 30 V
Produkt ist nicht verfügbar
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FDMC4435BZ fdmc4435bz-d.pdf
FDMC4435BZ
Hersteller: onsemi
Description: MOSFET P-CH 30V 8.5A/18A 8MLP
Packaging: Cut Tape (CT)
Package / Case: 8-PowerWDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 8.5A (Ta), 18A (Tc)
Rds On (Max) @ Id, Vgs: 20mOhm @ 8.5A, 10V
Power Dissipation (Max): 2.3W (Ta), 31W (Tc)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: 8-MLP (3.3x3.3)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±25V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 46 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2045 pF @ 15 V
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7+3.2 EUR
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FDMC8462 fdmc8462-d.pdf
FDMC8462
Hersteller: onsemi
Description: MOSFET N-CH 40V 14A/20A POWER33
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 14A (Ta), 20A (Tc)
Rds On (Max) @ Id, Vgs: 5.8mOhm @ 13.5A, 10V
Power Dissipation (Max): 2W (Ta), 41W (Tc)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: Power33
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 43 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2660 pF @ 20 V
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FDMS3662 fdms3662-d.pdf
FDMS3662
Hersteller: onsemi
Description: MOSFET N-CH 100V 8.9A/49A 8PQFN
Input Capacitance (Ciss) (Max) @ Vds: 4620 pF @ 50 V
Gate Charge (Qg) (Max) @ Vgs: 75 nC @ 10 V
Drain to Source Voltage (Vdss): 100 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Supplier Device Package: 8-PQFN (5x6)
Vgs(th) (Max) @ Id: 4.5V @ 250µA
Power Dissipation (Max): 2.5W (Ta), 104W (Tc)
Rds On (Max) @ Id, Vgs: 14.8mOhm @ 8.9A, 10V
Current - Continuous Drain (Id) @ 25°C: 8.9A (Ta), 49A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-PowerTDFN
Packaging: Cut Tape (CT)
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FDMS5352 fdms5352-d.pdf
FDMS5352
Hersteller: onsemi
Description: MOSFET N-CH 60V 13.6A/49A 8PQFN
Input Capacitance (Ciss) (Max) @ Vds: 6940 pF @ 30 V
Gate Charge (Qg) (Max) @ Vgs: 131 nC @ 10 V
Drain to Source Voltage (Vdss): 60 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Part Status: Active
Supplier Device Package: 8-PQFN (5x6)
Vgs(th) (Max) @ Id: 3V @ 250µA
Power Dissipation (Max): 2.5W (Ta), 104W (Tc)
Rds On (Max) @ Id, Vgs: 6.7mOhm @ 13.6A, 10V
Current - Continuous Drain (Id) @ 25°C: 13.6A (Ta), 49A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-PowerTDFN
Packaging: Cut Tape (CT)
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4+5.51 EUR
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100+3.15 EUR
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CAT885ZI-SA-GT3 design-resources?notFound=CAT885-D.PDF
CAT885ZI-SA-GT3
Hersteller: onsemi
Description: IC SUPERVSR 5CH 2.87/1.68V 8MSOP
Produkt ist nicht verfügbar
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CAT24C256WI-GT3 CAT24C256-D.PDF
CAT24C256WI-GT3
Hersteller: onsemi
Description: IC EEPROM 256KBIT I2C 1MHZ 8SOIC
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Memory Size: 256Kbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 1.8V ~ 5.5V
Technology: EEPROM
Clock Frequency: 1 MHz
Memory Format: EEPROM
Supplier Device Package: 8-SOIC
Part Status: Active
Write Cycle Time - Word, Page: 5ms
Memory Interface: I2C
Access Time: 500 ns
Memory Organization: 32K x 8
DigiKey Programmable: Verified
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3000+0.84 EUR
6000+0.82 EUR
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CAT24C256YI-GT3 CAT24C256-D.PDF
CAT24C256YI-GT3
Hersteller: onsemi
Description: IC EEPROM 256KBIT I2C 8TSSOP
Packaging: Tape & Reel (TR)
Package / Case: 8-TSSOP (0.173", 4.40mm Width)
Mounting Type: Surface Mount
Memory Size: 256Kbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 1.8V ~ 5.5V
Technology: EEPROM
Clock Frequency: 1 MHz
Memory Format: EEPROM
Supplier Device Package: 8-TSSOP
Part Status: Active
Write Cycle Time - Word, Page: 5ms
Memory Interface: I2C
Access Time: 500 ns
Memory Organization: 32K x 8
DigiKey Programmable: Verified
auf Bestellung 24000 Stücke:
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AnzahlPrivatkunde
3000+0.73 EUR
6000+0.71 EUR
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CAT24C128YI-GT3 CAT24C128-D.PDF
CAT24C128YI-GT3
Hersteller: onsemi
Description: IC EEPROM 128KBIT I2C 8TSSOP
Packaging: Tape & Reel (TR)
Package / Case: 8-TSSOP (0.173", 4.40mm Width)
Mounting Type: Surface Mount
Memory Size: 128Kbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 1.8V ~ 5.5V
Technology: EEPROM
Clock Frequency: 1 MHz
Memory Format: EEPROM
Supplier Device Package: 8-TSSOP
Part Status: Active
Write Cycle Time - Word, Page: 5ms
Memory Interface: I2C
Access Time: 400 ns
Memory Organization: 16K x 8
DigiKey Programmable: Not Verified
auf Bestellung 3000 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
3000+0.94 EUR
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FSBF10CH60BTL FSBF10CH60BTL.pdf
FSBF10CH60BTL
Hersteller: onsemi
Description: MODULE SPM 600V 10A 3PH SPM27-JB
Produkt ist nicht verfügbar
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FSQ0765RQWDTU fsq0765rq-d.pdf
FSQ0765RQWDTU
Hersteller: onsemi
Description: IC OFFLINE SW FLBACK TO220F-6L
Power (Watts): 90 W
Part Status: Obsolete
Control Features: Sync
Voltage - Start Up: 12 V
Fault Protection: Current Limiting, Over Load, Over Temperature, Over Voltage, Short Circuit
Supplier Device Package: TO-220F-6L (L-Forming)
Voltage - Supply (Vcc/Vdd): 8V ~ 20V
Topology: Flyback
Output Isolation: Isolated
Voltage - Breakdown: 650V
Internal Switch(s): Yes
Frequency - Switching: 48kHz ~ 67kHz
Operating Temperature: -25°C ~ 85°C (TA)
Mounting Type: Through Hole
Package / Case: TO-220-6 Full Pack, Formed Leads
Packaging: Tube
Produkt ist nicht verfügbar
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2SA1943OTU FJL4215-D.PDF
2SA1943OTU
Hersteller: onsemi
Description: TRANS PNP 250V 17A TO-264-3
Packaging: Tube
Package / Case: TO-264-3, TO-264AA
Mounting Type: Through Hole
Transistor Type: PNP
Operating Temperature: -50°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 3V @ 800mA, 8A
Current - Collector Cutoff (Max): 5µA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 1A, 5V
Frequency - Transition: 30MHz
Supplier Device Package: TO-264-3
Part Status: Active
Current - Collector (Ic) (Max): 17 A
Voltage - Collector Emitter Breakdown (Max): 250 V
Power - Max: 150 W
Produkt ist nicht verfügbar
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2SA1962OTU FJA4213-D.pdf
2SA1962OTU
Hersteller: onsemi
Description: TRANS PNP 250V 17A TO-3P
Packaging: Tube
Package / Case: TO-3P-3, SC-65-3
Mounting Type: Through Hole
Transistor Type: PNP
Operating Temperature: -55°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 3V @ 800mA, 8A
Current - Collector Cutoff (Max): 5µA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 1A, 5V
Frequency - Transition: 30MHz
Supplier Device Package: TO-3P
Part Status: Obsolete
Current - Collector (Ic) (Max): 17 A
Voltage - Collector Emitter Breakdown (Max): 250 V
Power - Max: 130 W
auf Bestellung 81 Stücke:
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AnzahlPrivatkunde
3+10.28 EUR
30+5.77 EUR
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2SC5242RTU 2SC5242%2CFJA4313.pdf
2SC5242RTU
Hersteller: onsemi
Description: TRANS NPN 250V 17A TO-3P
Packaging: Tube
Package / Case: TO-3P-3, SC-65-3
Mounting Type: Through Hole
Transistor Type: NPN
Operating Temperature: -55°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 3V @ 800mA, 8A
Current - Collector Cutoff (Max): 5µA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 55 @ 1A, 5V
Frequency - Transition: 30MHz
Supplier Device Package: TO-3P
Part Status: Obsolete
Current - Collector (Ic) (Max): 17 A
Voltage - Collector Emitter Breakdown (Max): 250 V
Power - Max: 130 W
Produkt ist nicht verfügbar
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2SC5242OTU fja4313-d.pdf
2SC5242OTU
Hersteller: onsemi
Description: TRANS NPN 250V 17A TO-3P
Packaging: Tube
Package / Case: TO-3P-3, SC-65-3
Mounting Type: Through Hole
Transistor Type: NPN
Operating Temperature: -55°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 3V @ 800mA, 8A
Current - Collector Cutoff (Max): 5µA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 1A, 5V
Frequency - Transition: 30MHz
Supplier Device Package: TO-3P
Part Status: Active
Current - Collector (Ic) (Max): 17 A
Voltage - Collector Emitter Breakdown (Max): 250 V
Power - Max: 130 W
Produkt ist nicht verfügbar
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2SA1381CSTU ksa1381-d.pdf
2SA1381CSTU
Hersteller: onsemi
Description: TRANS PNP 300V 0.1A TO-126-3
Packaging: Tube
Package / Case: TO-225AA, TO-126-3
Mounting Type: Through Hole
Transistor Type: PNP
Operating Temperature: -55°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 600mV @ 2mA, 20mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 10mA, 10V
Frequency - Transition: 150MHz
Supplier Device Package: TO-126-3
Part Status: Obsolete
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 300 V
Power - Max: 7 W
Produkt ist nicht verfügbar
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2SA1381DSTU ksa1381-d.pdf
2SA1381DSTU
Hersteller: onsemi
Description: TRANS PNP 300V 0.1A TO-126-3
Packaging: Tube
Package / Case: TO-225AA, TO-126-3
Mounting Type: Through Hole
Transistor Type: PNP
Operating Temperature: -55°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 600mV @ 2mA, 20mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 60 @ 10mA, 10V
Frequency - Transition: 150MHz
Supplier Device Package: TO-126-3
Part Status: Obsolete
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 300 V
Power - Max: 7 W
Produkt ist nicht verfügbar
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2SA1381ESTU ksa1381-d.pdf
2SA1381ESTU
Hersteller: onsemi
Description: TRANS PNP 300V 0.1A TO-126-3
Packaging: Tube
Package / Case: TO-225AA, TO-126-3
Mounting Type: Through Hole
Transistor Type: PNP
Operating Temperature: -55°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 600mV @ 2mA, 20mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 10mA, 10V
Frequency - Transition: 150MHz
Supplier Device Package: TO-126-3
Part Status: Obsolete
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 300 V
Power - Max: 7 W
Produkt ist nicht verfügbar
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2SA1381FSTU ksa1381-d.pdf
2SA1381FSTU
Hersteller: onsemi
Description: TRANS PNP 300V 0.1A TO-126-3
Packaging: Tube
Package / Case: TO-225AA, TO-126-3
Mounting Type: Through Hole
Transistor Type: PNP
Operating Temperature: -55°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 600mV @ 2mA, 20mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 160 @ 10mA, 10V
Frequency - Transition: 150MHz
Supplier Device Package: TO-126-3
Part Status: Obsolete
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 300 V
Power - Max: 7 W
Produkt ist nicht verfügbar
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FAN7387MX fan7387-d.pdf
FAN7387MX
Hersteller: onsemi
Description: IC BALLAST CNTRL 22KHZ 8SOP
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Frequency: 18kHz ~ 22kHz
Type: Ballast Controller
Operating Temperature: -40°C ~ 125°C
Voltage - Supply: 11V ~ 14V
Supplier Device Package: 8-SOIC
Dimming: No
Part Status: Last Time Buy
Current - Supply: 800 µA
Produkt ist nicht verfügbar
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FAN7387N fan7387-d.pdf
FAN7387N
Hersteller: onsemi
Description: IC BALLAST CNTRL 22KHZ 8DIP
Current - Supply: 800 µA
Part Status: Obsolete
Dimming: No
Supplier Device Package: 8-DIP
Voltage - Supply: 11V ~ 14V
Operating Temperature: -40°C ~ 125°C
Type: Ballast Controller
Frequency: 18kHz ~ 22kHz
Mounting Type: Through Hole
Package / Case: 8-DIP (0.300", 7.62mm)
Packaging: Tube
Produkt ist nicht verfügbar
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FAN7390M1X fan7390-d.pdf
FAN7390M1X
Hersteller: onsemi
Description: IC GATE DRVR HALF-BRIDGE 14SOP
DigiKey Programmable: Not Verified
Part Status: Last Time Buy
Current - Peak Output (Source, Sink): 4.5A, 4.5A
Logic Voltage - VIL, VIH: 1.2V, 2.5V
Gate Type: IGBT, N-Channel MOSFET
Number of Drivers: 2
Driven Configuration: Half-Bridge
Channel Type: Independent
Rise / Fall Time (Typ): 25ns, 20ns
Supplier Device Package: 14-SOP
High Side Voltage - Max (Bootstrap): 600 V
Input Type: Non-Inverting
Voltage - Supply: 10V ~ 22V
Operating Temperature: -40°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 14-SOIC (0.154", 3.90mm Width)
Packaging: Tape & Reel (TR)
auf Bestellung 3000 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
3000+2.33 EUR
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FAN7390MX FAN7390-D.PDF
FAN7390MX
Hersteller: onsemi
Description: IC GATE DRVR HALF-BRIDGE 8SOIC
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Voltage - Supply: 10V ~ 22V
Input Type: Non-Inverting
High Side Voltage - Max (Bootstrap): 600 V
Supplier Device Package: 8-SOIC
Rise / Fall Time (Typ): 25ns, 20ns
Channel Type: Independent
Driven Configuration: Half-Bridge
Number of Drivers: 2
Gate Type: IGBT, MOSFET (N-Channel)
Logic Voltage - VIL, VIH: 1.2V, 2.5V
Current - Peak Output (Source, Sink): 4.5A, 4.5A
Part Status: Last Time Buy
DigiKey Programmable: Not Verified
Produkt ist nicht verfügbar
Mindestbestellmenge: 3000 Stücke
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FJP1943OTU fjp1943-d.pdf
FJP1943OTU
Hersteller: onsemi
Description: TRANS PNP 230V 15A TO-220-3
Current - Collector Cutoff (Max): 5µA (ICBO)
Vce Saturation (Max) @ Ib, Ic: 3V @ 800mA, 8A
Operating Temperature: -50°C ~ 150°C (TJ)
Transistor Type: PNP
Mounting Type: Through Hole
Package / Case: TO-220-3
Packaging: Tube
Power - Max: 80 W
Voltage - Collector Emitter Breakdown (Max): 230 V
Current - Collector (Ic) (Max): 15 A
Part Status: Obsolete
Supplier Device Package: TO-220-3
Frequency - Transition: 30MHz
DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 1A, 5V
Produkt ist nicht verfügbar
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FAN7387MX fan7387-d.pdf
FAN7387MX
Hersteller: onsemi
Description: IC BALLAST CNTRL 22KHZ 8SOP
Packaging: Cut Tape (CT)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Frequency: 18kHz ~ 22kHz
Type: Ballast Controller
Operating Temperature: -40°C ~ 125°C
Voltage - Supply: 11V ~ 14V
Supplier Device Package: 8-SOIC
Dimming: No
Part Status: Last Time Buy
Current - Supply: 800 µA
Produkt ist nicht verfügbar
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FAN7390M1X fan7390-d.pdf
FAN7390M1X
Hersteller: onsemi
Description: IC GATE DRVR HALF-BRIDGE 14SOP
Packaging: Cut Tape (CT)
Package / Case: 14-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Voltage - Supply: 10V ~ 22V
Input Type: Non-Inverting
High Side Voltage - Max (Bootstrap): 600 V
Supplier Device Package: 14-SOP
Rise / Fall Time (Typ): 25ns, 20ns
Channel Type: Independent
Driven Configuration: Half-Bridge
Number of Drivers: 2
Gate Type: IGBT, N-Channel MOSFET
Logic Voltage - VIL, VIH: 1.2V, 2.5V
Current - Peak Output (Source, Sink): 4.5A, 4.5A
Part Status: Last Time Buy
DigiKey Programmable: Not Verified
auf Bestellung 5091 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
4+5.28 EUR
10+4.75 EUR
25+4.47 EUR
100+3.58 EUR
250+3.13 EUR
500+3.05 EUR
1000+2.42 EUR
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FAN7390MX FAN7390-D.PDF
FAN7390MX
Hersteller: onsemi
Description: IC GATE DRVR HALF-BRIDGE 8SOIC
Packaging: Cut Tape (CT)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Voltage - Supply: 10V ~ 22V
Input Type: Non-Inverting
High Side Voltage - Max (Bootstrap): 600 V
Supplier Device Package: 8-SOIC
Rise / Fall Time (Typ): 25ns, 20ns
Channel Type: Independent
Driven Configuration: Half-Bridge
Number of Drivers: 2
Gate Type: IGBT, MOSFET (N-Channel)
Logic Voltage - VIL, VIH: 1.2V, 2.5V
Current - Peak Output (Source, Sink): 4.5A, 4.5A
Part Status: Last Time Buy
DigiKey Programmable: Not Verified
auf Bestellung 2733 Stücke:
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AnzahlPrivatkunde
6+3.62 EUR
10+2.67 EUR
25+2.43 EUR
100+2.17 EUR
250+2.03 EUR
500+1.96 EUR
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FAN7388MX fan7388-d.pdf
FAN7388MX
Hersteller: onsemi
Description: IC GATE DRVR HALF-BRIDGE 20SOIC
Packaging: Tape & Reel (TR)
Package / Case: 20-SOIC (0.295", 7.50mm Width)
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Voltage - Supply: 10V ~ 20V
Input Type: Non-Inverting
High Side Voltage - Max (Bootstrap): 600 V
Supplier Device Package: 20-SOIC
Rise / Fall Time (Typ): 50ns, 30ns
Channel Type: 3-Phase
Driven Configuration: Half-Bridge
Number of Drivers: 6
Gate Type: IGBT, MOSFET (N-Channel)
Logic Voltage - VIL, VIH: 1V, 2.5V
Current - Peak Output (Source, Sink): 350mA, 650mA
Part Status: Last Time Buy
DigiKey Programmable: Not Verified
Produkt ist nicht verfügbar
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FAN7888MX fan7888-d.pdf
FAN7888MX
Hersteller: onsemi
Description: IC GATE DRVR HALF-BRIDGE 20SOIC
Packaging: Tape & Reel (TR)
Package / Case: 20-SOIC (0.295", 7.50mm Width)
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Voltage - Supply: 10V ~ 20V
Input Type: Non-Inverting
High Side Voltage - Max (Bootstrap): 200 V
Supplier Device Package: 20-SOIC
Rise / Fall Time (Typ): 50ns, 30ns
Channel Type: 3-Phase
Driven Configuration: Half-Bridge
Number of Drivers: 6
Gate Type: IGBT, MOSFET (N-Channel)
Logic Voltage - VIL, VIH: 1V, 2.5V
Current - Peak Output (Source, Sink): 350mA, 650mA
Part Status: Last Time Buy
DigiKey Programmable: Not Verified
auf Bestellung 5000 Stücke:
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AnzahlPrivatkunde
1000+2.61 EUR
2000+2.55 EUR
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FDB024N06 fdb024n06-d.pdf
FDB024N06
Hersteller: onsemi
Description: MOSFET N-CH 60V 120A D2PAK
Input Capacitance (Ciss) (Max) @ Vds: 14885 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 226 nC @ 10 V
Drain to Source Voltage (Vdss): 60 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Active
Supplier Device Package: TO-263 (D2Pak)
Vgs(th) (Max) @ Id: 4.5V @ 250µA
Power Dissipation (Max): 395W (Tc)
Rds On (Max) @ Id, Vgs: 2.4mOhm @ 75A, 10V
Current - Continuous Drain (Id) @ 25°C: 120A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar
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FDB031N08 FDB031N08-D.PDF
FDB031N08
Hersteller: onsemi
Description: MOSFET N-CH 75V 120A D2PAK
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 120A (Tc)
Rds On (Max) @ Id, Vgs: 3.1mOhm @ 75A, 10V
Power Dissipation (Max): 375W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 250µA
Supplier Device Package: TO-263 (D2Pak)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 75 V
Gate Charge (Qg) (Max) @ Vgs: 220 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 15160 pF @ 25 V
Produkt ist nicht verfügbar
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FDMS3500 fdms3500-d.pdf
FDMS3500
Hersteller: onsemi
Description: MOSFET N-CH 75V PWR CLIP 56
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Supplier Device Package: 8-PQFN (5x6)
Vgs(th) (Max) @ Id: 3V @ 250µA
Power Dissipation (Max): 2.5W (Ta), 96W (Tc)
Rds On (Max) @ Id, Vgs: 14.5mOhm @ 11.5A, 10V
Current - Continuous Drain (Id) @ 25°C: 9.2A (Ta), 49A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-PowerTDFN
Packaging: Tape & Reel (TR)
Input Capacitance (Ciss) (Max) @ Vds: 4765 pF @ 40 V
Gate Charge (Qg) (Max) @ Vgs: 91 nC @ 10 V
Drain to Source Voltage (Vdss): 75 V
Vgs (Max): ±20V
auf Bestellung 3000 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
3000+1.86 EUR
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FDP025N06 fdp025n06-d.pdf
FDP025N06
Hersteller: onsemi
Description: MOSFET N-CH 60V 120A TO220-3
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 120A (Tc)
Rds On (Max) @ Id, Vgs: 2.5mOhm @ 75A, 10V
Power Dissipation (Max): 395W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 250µA
Supplier Device Package: TO-220-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 226 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 14885 pF @ 25 V
auf Bestellung 237 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
3+9.89 EUR
50+5.19 EUR
100+4.74 EUR
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FDP047N10 fdp047n10-d.pdf
FDP047N10
Hersteller: onsemi
Description: MOSFET N-CH 100V 120A TO220-3
Input Capacitance (Ciss) (Max) @ Vds: 15265 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 210 nC @ 10 V
Drain to Source Voltage (Vdss): 100 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Active
Supplier Device Package: TO-220-3
Vgs(th) (Max) @ Id: 4.5V @ 250µA
Power Dissipation (Max): 375W (Tc)
Rds On (Max) @ Id, Vgs: 4.7mOhm @ 75A, 10V
Current - Continuous Drain (Id) @ 25°C: 120A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-220-3
Packaging: Tube
auf Bestellung 87 Stücke:
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2+10.89 EUR
50+5.71 EUR
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FDS5351 fds5351-d.pdf
FDS5351
Hersteller: onsemi
Description: MOSFET N-CH 60V 6.1A 8SOIC
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 6.1A (Ta)
Rds On (Max) @ Id, Vgs: 35mOhm @ 6.1A, 10V
Power Dissipation (Max): 5W (Ta)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: 8-SOIC
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 27 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1310 pF @ 30 V
auf Bestellung 15000 Stücke:
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2500+0.57 EUR
5000+0.52 EUR
7500+0.5 EUR
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FFP08S60SNTU ffp08s60sn-d.pdf
FFP08S60SNTU
Hersteller: onsemi
Description: DIODE GEN PURP 600V 8A TO220-2L
Voltage - Forward (Vf) (Max) @ If: 3.4 V @ 8 A
Voltage - DC Reverse (Vr) (Max): 600 V
Part Status: Obsolete
Operating Temperature - Junction: -65°C ~ 150°C
Supplier Device Package: TO-220-2L
Current - Average Rectified (Io): 8A
Technology: Standard
Reverse Recovery Time (trr): 32 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Through Hole
Package / Case: TO-220-2
Packaging: Tube
Current - Reverse Leakage @ Vr: 100 µA @ 600 V
Produkt ist nicht verfügbar
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HGT1S7N60A4DS HGT%28G%2CP%2C1S%297N60A4D%28S%29.pdf
HGT1S7N60A4DS
Hersteller: onsemi
Description: IGBT 600V 34A TO-263
Packaging: Tube
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 34 ns
Vce(on) (Max) @ Vge, Ic: 2.7V @ 15V, 7A
Supplier Device Package: TO-263 (D2Pak)
Td (on/off) @ 25°C: 11ns/100ns
Switching Energy: 55µJ (on), 60µJ (off)
Test Condition: 390V, 7A, 25Ohm, 15V
Gate Charge: 37 nC
Part Status: Obsolete
Current - Collector (Ic) (Max): 34 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 56 A
Power - Max: 125 W
Produkt ist nicht verfügbar
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HGT1S12N60A4S9A HGTG12N60A4.pdf
HGT1S12N60A4S9A
Hersteller: onsemi
Description: IGBT 600V 54A TO-263
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 2.7V @ 15V, 12A
Supplier Device Package: TO-263 (D2Pak)
Td (on/off) @ 25°C: 17ns/96ns
Switching Energy: 55µJ (on), 50µJ (off)
Test Condition: 390V, 12A, 10Ohm, 15V
Gate Charge: 78 nC
Part Status: Obsolete
Current - Collector (Ic) (Max): 54 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 96 A
Power - Max: 167 W
Produkt ist nicht verfügbar
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FAN7388MX fan7388-d.pdf
FAN7388MX
Hersteller: onsemi
Description: IC GATE DRVR HALF-BRIDGE 20SOIC
Packaging: Cut Tape (CT)
Package / Case: 20-SOIC (0.295", 7.50mm Width)
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Voltage - Supply: 10V ~ 20V
Input Type: Non-Inverting
High Side Voltage - Max (Bootstrap): 600 V
Supplier Device Package: 20-SOIC
Rise / Fall Time (Typ): 50ns, 30ns
Channel Type: 3-Phase
Driven Configuration: Half-Bridge
Number of Drivers: 6
Gate Type: IGBT, MOSFET (N-Channel)
Logic Voltage - VIL, VIH: 1V, 2.5V
Current - Peak Output (Source, Sink): 350mA, 650mA
Part Status: Last Time Buy
DigiKey Programmable: Not Verified
auf Bestellung 454 Stücke:
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5+5.11 EUR
10+3.81 EUR
25+3.49 EUR
100+3.13 EUR
250+2.96 EUR
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FAN7888MX fan7888-d.pdf
FAN7888MX
Hersteller: onsemi
Description: IC GATE DRVR HALF-BRIDGE 20SOIC
Packaging: Cut Tape (CT)
Package / Case: 20-SOIC (0.295", 7.50mm Width)
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Voltage - Supply: 10V ~ 20V
Input Type: Non-Inverting
High Side Voltage - Max (Bootstrap): 200 V
Supplier Device Package: 20-SOIC
Rise / Fall Time (Typ): 50ns, 30ns
Channel Type: 3-Phase
Driven Configuration: Half-Bridge
Number of Drivers: 6
Gate Type: IGBT, MOSFET (N-Channel)
Logic Voltage - VIL, VIH: 1V, 2.5V
Current - Peak Output (Source, Sink): 350mA, 650mA
Part Status: Last Time Buy
DigiKey Programmable: Not Verified
auf Bestellung 5358 Stücke:
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5+4.94 EUR
10+3.69 EUR
25+3.38 EUR
100+3.03 EUR
250+2.87 EUR
500+2.81 EUR
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FDB024N06 fdb024n06-d.pdf
FDB024N06
Hersteller: onsemi
Description: MOSFET N-CH 60V 120A D2PAK
Input Capacitance (Ciss) (Max) @ Vds: 14885 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 226 nC @ 10 V
Drain to Source Voltage (Vdss): 60 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Active
Supplier Device Package: TO-263 (D2Pak)
Vgs(th) (Max) @ Id: 4.5V @ 250µA
Power Dissipation (Max): 395W (Tc)
Rds On (Max) @ Id, Vgs: 2.4mOhm @ 75A, 10V
Current - Continuous Drain (Id) @ 25°C: 120A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Packaging: Cut Tape (CT)
Produkt ist nicht verfügbar
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FDB031N08 FDB031N08-D.PDF
FDB031N08
Hersteller: onsemi
Description: MOSFET N-CH 75V 120A D2PAK
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 120A (Tc)
Rds On (Max) @ Id, Vgs: 3.1mOhm @ 75A, 10V
Power Dissipation (Max): 375W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 250µA
Supplier Device Package: TO-263 (D2Pak)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 75 V
Gate Charge (Qg) (Max) @ Vgs: 220 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 15160 pF @ 25 V
Produkt ist nicht verfügbar
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FDMS3500 fdms3500-d.pdf
FDMS3500
Hersteller: onsemi
Description: MOSFET N-CH 75V PWR CLIP 56
Input Capacitance (Ciss) (Max) @ Vds: 4765 pF @ 40 V
Gate Charge (Qg) (Max) @ Vgs: 91 nC @ 10 V
Drain to Source Voltage (Vdss): 75 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Supplier Device Package: 8-PQFN (5x6)
Vgs(th) (Max) @ Id: 3V @ 250µA
Power Dissipation (Max): 2.5W (Ta), 96W (Tc)
Rds On (Max) @ Id, Vgs: 14.5mOhm @ 11.5A, 10V
Current - Continuous Drain (Id) @ 25°C: 9.2A (Ta), 49A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-PowerTDFN
Packaging: Cut Tape (CT)
auf Bestellung 5427 Stücke:
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6+4.11 EUR
10+3.42 EUR
100+2.71 EUR
500+2.3 EUR
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FDS5351 fds5351-d.pdf
FDS5351
Hersteller: onsemi
Description: MOSFET N-CH 60V 6.1A 8SOIC
Packaging: Cut Tape (CT)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 6.1A (Ta)
Rds On (Max) @ Id, Vgs: 35mOhm @ 6.1A, 10V
Power Dissipation (Max): 5W (Ta)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: 8-SOIC
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 27 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1310 pF @ 30 V
auf Bestellung 17592 Stücke:
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10+2.18 EUR
16+1.38 EUR
100+0.9 EUR
500+0.7 EUR
1000+0.64 EUR
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FQD5N60CTM fqu5n60c-d.pdf
FQD5N60CTM
Hersteller: onsemi
Description: MOSFET N-CH 600V 2.8A DPAK
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 2.8A (Tc)
Rds On (Max) @ Id, Vgs: 2.5Ohm @ 1.4A, 10V
Power Dissipation (Max): 2.5W (Ta), 49W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-252AA
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 19 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 670 pF @ 25 V
auf Bestellung 4165 Stücke:
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6+3.64 EUR
10+2.33 EUR
100+1.57 EUR
500+1.24 EUR
1000+1.13 EUR
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FAN73833MX FAN73833-D.pdf
FAN73833MX
Hersteller: onsemi
Description: IC GATE DRVR HALF-BRIDGE 8SOIC
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Voltage - Supply: 11V ~ 20V
Input Type: Non-Inverting
High Side Voltage - Max (Bootstrap): 600 V
Supplier Device Package: 8-SOIC
Rise / Fall Time (Typ): 50ns, 30ns
Channel Type: Independent
Driven Configuration: Half-Bridge
Number of Drivers: 2
Gate Type: IGBT, MOSFET (N-Channel)
Logic Voltage - VIL, VIH: 1.2V, 2.5V
Current - Peak Output (Source, Sink): 350mA, 650mA
Part Status: Last Time Buy
DigiKey Programmable: Not Verified
auf Bestellung 6000 Stücke:
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AnzahlPrivatkunde
3000+1.48 EUR
6000+1.44 EUR
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FDD3510H fdd3510h-d.pdf
FDD3510H
Hersteller: onsemi
Description: MOSFET N/P-CH 80V 4.3A TO252
Supplier Device Package: TO-252 (DPAK)
Vgs(th) (Max) @ Id: 4V @ 250µA
FET Feature: Logic Level Gate
Gate Charge (Qg) (Max) @ Vgs: 18nC @ 10V
Rds On (Max) @ Id, Vgs: 80mOhm @ 4.3A, 10V
Input Capacitance (Ciss) (Max) @ Vds: 800pF @ 40V
Current - Continuous Drain (Id) @ 25°C: 4.3A, 2.8A
Drain to Source Voltage (Vdss): 80V
Power - Max: 1.3W
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Configuration: N and P-Channel, Common Drain
Mounting Type: Surface Mount
Package / Case: TO-252-5, DPak (4 Leads + Tab), TO-252AD
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar
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FOD0710 fod0721-d.pdf
FOD0710
Hersteller: onsemi
Description: OPTOISO 3.75KV PUSH PULL 8SO
Current - Output / Channel: 10 mA
Number of Channels: 1
Propagation Delay tpLH / tpHL (Max): 40ns, 40ns
Common Mode Transient Immunity (Min): 20kV/µs
Rise / Fall Time (Typ): 5ns, 4.5ns
Supplier Device Package: 8-SOIC
Inputs - Side 1/Side 2: 1/0
Voltage - Isolation: 3750Vrms
Input Type: Logic
Data Rate: 12.5Mbps
Voltage - Supply: 4.5V ~ 5.5V
Operating Temperature: -40°C ~ 100°C
Mounting Type: Surface Mount
Output Type: Push-Pull, Totem Pole
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Packaging: Tube
auf Bestellung 1454 Stücke:
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3+9.23 EUR
50+5.21 EUR
100+4.87 EUR
500+4.28 EUR
1000+4.09 EUR
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FOD0720 fod0721-d.pdf
FOD0720
Hersteller: onsemi
Description: OPTOISO 3.75KV PUSH PULL 8SO
Current - Output / Channel: 10 mA
Number of Channels: 1
Propagation Delay tpLH / tpHL (Max): 40ns, 40ns
Common Mode Transient Immunity (Min): 20kV/µs
Rise / Fall Time (Typ): 5ns, 4.5ns
Supplier Device Package: 8-SOIC
Inputs - Side 1/Side 2: 1/0
Voltage - Isolation: 3750Vrms
Input Type: Logic
Data Rate: 25Mbps
Voltage - Supply: 4.5V ~ 5.5V
Operating Temperature: -40°C ~ 100°C
Mounting Type: Surface Mount
Output Type: Push-Pull, Totem Pole
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Packaging: Tube
auf Bestellung 1173 Stücke:
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AnzahlPrivatkunde
3+7.1 EUR
50+5.01 EUR
100+4.11 EUR
500+3.46 EUR
1000+3.18 EUR
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FOD0721 fod0721-d.pdf
FOD0721
Hersteller: onsemi
Description: OPTOISO 3.75KV PUSH PULL 8SO
Current - Output / Channel: 10 mA
Number of Channels: 1
Propagation Delay tpLH / tpHL (Max): 40ns, 40ns
Common Mode Transient Immunity (Min): 20kV/µs
Rise / Fall Time (Typ): 5ns, 4.5ns
Supplier Device Package: 8-SOIC
Inputs - Side 1/Side 2: 1/0
Voltage - Isolation: 3750Vrms
Input Type: Logic
Data Rate: 25Mbps
Voltage - Supply: 4.5V ~ 5.5V
Operating Temperature: -40°C ~ 100°C
Mounting Type: Surface Mount
Output Type: Push-Pull, Totem Pole
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Packaging: Tube
auf Bestellung 2905 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
3+8.79 EUR
50+6.21 EUR
100+5.08 EUR
500+4.28 EUR
1000+3.94 EUR
2000+3.77 EUR
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FSQ0765RSWDTU fsq0765rs-d.pdf
FSQ0765RSWDTU
Hersteller: onsemi
Description: IC OFFLINE SW FLBACK TO220F-6L
Packaging: Tube
Package / Case: TO-220-6 Full Pack, Formed Leads
Mounting Type: Through Hole
Operating Temperature: -25°C ~ 85°C (TA)
Frequency - Switching: 48kHz ~ 67kHz
Internal Switch(s): Yes
Voltage - Breakdown: 650V
Output Isolation: Isolated
Topology: Flyback
Voltage - Supply (Vcc/Vdd): 8V ~ 20V
Supplier Device Package: TO-220F-6L (U-Forming)
Fault Protection: Current Limiting, Over Load, Over Temperature, Over Voltage, Short Circuit
Voltage - Start Up: 12 V
Control Features: Sync
Part Status: Obsolete
Power (Watts): 90 W
Produkt ist nicht verfügbar
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FSQ510MX ONSM-S-A0003587555-1.pdf?t.download=true&u=5oefqw
FSQ510MX
Hersteller: onsemi
Description: IC OFFLINE SWITCH FLYBACK 7LSOP
Power (Watts): 9 W
Part Status: Obsolete
Control Features: Sync
Voltage - Start Up: 8.7 V
Fault Protection: Current Limiting, Over Load, Over Temperature
Supplier Device Package: 7-LSOP
Voltage - Supply (Vcc/Vdd): 6.7V ~ 20V
Topology: Flyback
Output Isolation: Isolated
Voltage - Breakdown: 700V
Internal Switch(s): Yes
Frequency - Switching: 94.3kHz ~ 132kHz
Duty Cycle: 60%
Operating Temperature: -40°C ~ 140°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-SMD (7 Leads), Gull Wing
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar
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FAN73833MX FAN73833-D.pdf
FAN73833MX
Hersteller: onsemi
Description: IC GATE DRVR HALF-BRIDGE 8SOIC
Packaging: Cut Tape (CT)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Voltage - Supply: 11V ~ 20V
Input Type: Non-Inverting
High Side Voltage - Max (Bootstrap): 600 V
Supplier Device Package: 8-SOIC
Rise / Fall Time (Typ): 50ns, 30ns
Channel Type: Independent
Driven Configuration: Half-Bridge
Number of Drivers: 2
Gate Type: IGBT, MOSFET (N-Channel)
Logic Voltage - VIL, VIH: 1.2V, 2.5V
Current - Peak Output (Source, Sink): 350mA, 650mA
Part Status: Last Time Buy
DigiKey Programmable: Not Verified
auf Bestellung 7687 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
7+3.03 EUR
10+2.24 EUR
25+2.03 EUR
100+1.81 EUR
250+1.7 EUR
500+1.63 EUR
1000+1.62 EUR
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FEB154 FEB154.pdf
Hersteller: onsemi
Description: EVAL BOARD FOR FSBB20CH60
Embedded: No
Primary Attributes: Motors (AC)
Supplied Contents: Board(s)
Utilized IC / Part: FSBB20CH60
Type: Power Management
Function: Motor Controller/Driver
Packaging: Bulk
Produkt ist nicht verfügbar
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