| Foto | Bezeichnung | Hersteller | Beschreibung |
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NTD4858NT4G | onsemi |
 Description: MOSFET N-CH 25V 11.2A/73A DPAKPackaging: Tape & Reel (TR) Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 155°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 11.2A (Ta), 73A (Tc) Rds On (Max) @ Id, Vgs: 6.2mOhm @ 30A, 10V Power Dissipation (Max): 1.3W (Ta), 54.5W (Tc) Vgs(th) (Max) @ Id: 2.5V @ 250µA Supplier Device Package: DPAK Part Status: Obsolete Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 25 V Gate Charge (Qg) (Max) @ Vgs: 19.2 nC @ 4.5 V Input Capacitance (Ciss) (Max) @ Vds: 1563 pF @ 12 V |
Produkt ist nicht verfügbar |
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NTD4860NT4G | onsemi |
Description: MOSFET N-CH 25V 10.4A/65A DPAK Packaging: Tape & Reel (TR) Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 155°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 10.4A (Ta), 65A (Tc) Rds On (Max) @ Id, Vgs: 7.5mOhm @ 30A, 10V Power Dissipation (Max): 1.28W (Ta), 50W (Tc) Vgs(th) (Max) @ Id: 2.5V @ 250µA Supplier Device Package: DPAK Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 25 V Gate Charge (Qg) (Max) @ Vgs: 16.5 nC @ 4.5 V Input Capacitance (Ciss) (Max) @ Vds: 1308 pF @ 12 V |
Produkt ist nicht verfügbar |
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NTD4863N-1G | onsemi |
Description: MOSFET N-CH 25V 9.2A/49A IPAK |
Produkt ist nicht verfügbar |
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NTD4863N-35G | onsemi |
Description: MOSFET N-CH 25V 9.2A/49A IPAK Packaging: Tube Package / Case: TO-251-3 Stub Leads, IPak Mounting Type: Through Hole Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 9.2A (Ta), 49A (Tc) Rds On (Max) @ Id, Vgs: 9.3mOhm @ 30A, 10V Power Dissipation (Max): 1.27W (Ta), 36.6W (Tc) Vgs(th) (Max) @ Id: 2.5V @ 250µA Supplier Device Package: IPAK Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 25 V Gate Charge (Qg) (Max) @ Vgs: 13.5 nC @ 4.5 V Input Capacitance (Ciss) (Max) @ Vds: 990 pF @ 12 V |
Produkt ist nicht verfügbar |
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NTD4863NT4G | onsemi |
Description: MOSFET N-CH 25V 9.2A/49A DPAK Packaging: Tape & Reel (TR) Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 9.2A (Ta), 49A (Tc) Rds On (Max) @ Id, Vgs: 9.3mOhm @ 30A, 10V Power Dissipation (Max): 1.27W (Ta), 36.6W (Tc) Vgs(th) (Max) @ Id: 2.5V @ 250µA Supplier Device Package: DPAK Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 25 V Gate Charge (Qg) (Max) @ Vgs: 13.5 nC @ 4.5 V Input Capacitance (Ciss) (Max) @ Vds: 990 pF @ 12 V |
Produkt ist nicht verfügbar |
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NTGD4161PT1G | onsemi |
Description: MOSFET 2P-CH 30V 1.5A 6TSOP Packaging: Tape & Reel (TR) Package / Case: SOT-23-6 Thin, TSOT-23-6 Mounting Type: Surface Mount Configuration: 2 P-Channel (Dual) Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 600mW Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 1.5A Input Capacitance (Ciss) (Max) @ Vds: 281pF @ 15V Rds On (Max) @ Id, Vgs: 160mOhm @ 2.1A, 10V Gate Charge (Qg) (Max) @ Vgs: 7.1nC @ 10V FET Feature: Logic Level Gate Vgs(th) (Max) @ Id: 3V @ 250µA Supplier Device Package: 6-TSOP |
Produkt ist nicht verfügbar |
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NTGS3130NT1G | onsemi |
Description: MOSFET N-CH 20V 4.23A 6TSOP Packaging: Tape & Reel (TR) Package / Case: SOT-23-6 Thin, TSOT-23-6 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 4.23A (Ta) Rds On (Max) @ Id, Vgs: 24mOhm @ 5.6A, 4.5V Power Dissipation (Max): 600mW (Ta) Vgs(th) (Max) @ Id: 1.4V @ 250µA Supplier Device Package: 6-TSOP Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V Vgs (Max): ±8V Drain to Source Voltage (Vdss): 20 V Gate Charge (Qg) (Max) @ Vgs: 20.3 nC @ 4.5 V Input Capacitance (Ciss) (Max) @ Vds: 935 pF @ 16 V |
Produkt ist nicht verfügbar |
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NTGS3136PT1G | onsemi |
Description: MOSFET P-CH 20V 3.7A 6TSOP Packaging: Tape & Reel (TR) Package / Case: SOT-23-6 Thin, TSOT-23-6 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 3.7A (Ta) Rds On (Max) @ Id, Vgs: 33mOhm @ 5.1A, 4.5V Power Dissipation (Max): 700mW (Ta) Vgs(th) (Max) @ Id: 1V @ 250µA Supplier Device Package: 6-TSOP Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V Vgs (Max): ±8V Drain to Source Voltage (Vdss): 20 V Gate Charge (Qg) (Max) @ Vgs: 29 nC @ 4.5 V Input Capacitance (Ciss) (Max) @ Vds: 1901 pF @ 10 V |
auf Bestellung 51000 Stücke: Lieferzeit 10-14 Tag (e) |
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NTGS3441BT1G | onsemi |
Description: MOSFET P-CH 20V 2.2A 6TSOP Packaging: Tape & Reel (TR) Package / Case: SOT-23-6 Thin, TSOT-23-6 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 2.2A (Ta) Rds On (Max) @ Id, Vgs: 90mOhm @ 3A, 4.5V Power Dissipation (Max): 700mW (Ta) Vgs(th) (Max) @ Id: 900mV @ 250µA Supplier Device Package: 6-TSOP Part Status: Obsolete Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V Vgs (Max): ±8V Drain to Source Voltage (Vdss): 20 V Gate Charge (Qg) (Max) @ Vgs: 9 nC @ 4.5 V Input Capacitance (Ciss) (Max) @ Vds: 630 pF @ 10 V |
Produkt ist nicht verfügbar |
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NTGS3441PT1G | onsemi |
Description: MOSFET P-CH 20V 1.8A 6TSOP Packaging: Tape & Reel (TR) Package / Case: SOT-23-6 Thin, TSOT-23-6 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 1.8A (Ta) Rds On (Max) @ Id, Vgs: 110mOhm @ 3A, 4.5V Power Dissipation (Max): 510mW (Ta) Vgs(th) (Max) @ Id: 1.6V @ 250µA Supplier Device Package: 6-TSOP Part Status: Obsolete Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V Vgs (Max): ±12V Drain to Source Voltage (Vdss): 20 V Gate Charge (Qg) (Max) @ Vgs: 6 nC @ 4.5 V Input Capacitance (Ciss) (Max) @ Vds: 345 pF @ 15 V |
Produkt ist nicht verfügbar |
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NTGS3443BT1G | onsemi |
Description: MOSFET P-CH 20V 2.7A 6TSOP Packaging: Tape & Reel (TR) Package / Case: SOT-23-6 Thin, TSOT-23-6 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 2.7A (Ta) Rds On (Max) @ Id, Vgs: 60mOhm @ 3.7A, 4.5V Power Dissipation (Max): 700mW (Ta) Vgs(th) (Max) @ Id: 1.4V @ 250µA Supplier Device Package: 6-TSOP Part Status: Obsolete Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V Vgs (Max): ±12V Drain to Source Voltage (Vdss): 20 V Gate Charge (Qg) (Max) @ Vgs: 11 nC @ 4.5 V Input Capacitance (Ciss) (Max) @ Vds: 819 pF @ 10 V |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||
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NTGS3443T2G | onsemi |
Description: MOSFET P-CH 20V 2.2A 6TSOP Packaging: Tape & Reel (TR) Package / Case: SOT-23-6 Thin, TSOT-23-6 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 2.2A (Ta) Rds On (Max) @ Id, Vgs: 65mOhm @ 4.4A, 4.5V Power Dissipation (Max): 500mW (Ta) Vgs(th) (Max) @ Id: 1.5V @ 250µA Supplier Device Package: 6-TSOP Part Status: Obsolete Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V Vgs (Max): ±12V Drain to Source Voltage (Vdss): 20 V Gate Charge (Qg) (Max) @ Vgs: 15 nC @ 4.5 V Input Capacitance (Ciss) (Max) @ Vds: 565 pF @ 5 V |
Produkt ist nicht verfügbar |
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NTGS3447PT1G | onsemi |
Description: MOSFET P-CH 12V 3.4A 6TSOP Packaging: Tape & Reel (TR) Package / Case: SOT-23-6 Thin, TSOT-23-6 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 3.4A (Ta) Rds On (Max) @ Id, Vgs: 40mOhm @ 4.7A, 4.5V Power Dissipation (Max): 700mW (Ta) Vgs(th) (Max) @ Id: 1V @ 250µA Supplier Device Package: 6-TSOP Part Status: Obsolete Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V Vgs (Max): ±8V Drain to Source Voltage (Vdss): 12 V Gate Charge (Qg) (Max) @ Vgs: 15 nC @ 4.5 V Input Capacitance (Ciss) (Max) @ Vds: 1053 pF @ 6 V |
Produkt ist nicht verfügbar |
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NTGS4111PT2G | onsemi |
Description: MOSFET P-CH 30V 2.6A 6TSOP Packaging: Tape & Reel (TR) Package / Case: SOT-23-6 Thin, TSOT-23-6 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 2.6A (Ta) Rds On (Max) @ Id, Vgs: 60mOhm @ 3.7A, 10V Power Dissipation (Max): 630mW (Ta) Vgs(th) (Max) @ Id: 3V @ 250µA Supplier Device Package: 6-TSOP Part Status: Obsolete Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 32 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 750 pF @ 15 V |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||
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NTHD3133PFT1G | onsemi |
Description: MOSFET P-CH 20V 3.2A CHIPFET Packaging: Tape & Reel (TR) Package / Case: 8-SMD, Flat Leads Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 3.2A (Tj) Rds On (Max) @ Id, Vgs: 80mOhm @ 3.2A, 4.5V FET Feature: Schottky Diode (Isolated) Power Dissipation (Max): 1.1W (Ta) Vgs(th) (Max) @ Id: 1.5V @ 250µA Supplier Device Package: ChipFET™ Part Status: Obsolete Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V Vgs (Max): ±8V Drain to Source Voltage (Vdss): 20 V Gate Charge (Qg) (Max) @ Vgs: 7.4 nC @ 4.5 V Input Capacitance (Ciss) (Max) @ Vds: 680 pF @ 10 V |
Produkt ist nicht verfügbar |
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NTHD3133PFT3G | onsemi |
Description: MOSFET P-CH 20V 3.2A CHIPFET Packaging: Tape & Reel (TR) Package / Case: 8-SMD, Flat Leads Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 3.2A (Tj) Rds On (Max) @ Id, Vgs: 80mOhm @ 3.2A, 4.5V FET Feature: Schottky Diode (Isolated) Power Dissipation (Max): 1.1W (Ta) Vgs(th) (Max) @ Id: 1.5V @ 250µA Supplier Device Package: ChipFET™ Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V Vgs (Max): ±8V Drain to Source Voltage (Vdss): 20 V Gate Charge (Qg) (Max) @ Vgs: 7.4 nC @ 4.5 V Input Capacitance (Ciss) (Max) @ Vds: 680 pF @ 10 V |
Produkt ist nicht verfügbar |
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NTHD4102PT3G | onsemi |
Description: MOSFET 2P-CH 20V 2.9A CHIPFET Packaging: Tape & Reel (TR) Package / Case: 8-SMD, Flat Leads Mounting Type: Surface Mount Configuration: 2 P-Channel (Dual) Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 1.1W Drain to Source Voltage (Vdss): 20V Current - Continuous Drain (Id) @ 25°C: 2.9A Input Capacitance (Ciss) (Max) @ Vds: 750pF @ 16V Rds On (Max) @ Id, Vgs: 80mOhm @ 2.9A, 4.5V Gate Charge (Qg) (Max) @ Vgs: 8.6nC @ 4.5V FET Feature: Logic Level Gate Vgs(th) (Max) @ Id: 1.5V @ 250µA Supplier Device Package: ChipFET™ |
Produkt ist nicht verfügbar |
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NTHS4166NT1G | onsemi |
Description: MOSFET N-CH 30V 4.9A CHIPFET Packaging: Tape & Reel (TR) Package / Case: 8-SMD, Flat Leads Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 4.9A (Ta) Rds On (Max) @ Id, Vgs: 22mOhm @ 4.9A, 10V Power Dissipation (Max): 800mW (Ta) Vgs(th) (Max) @ Id: 2.3V @ 250µA Supplier Device Package: ChipFET™ Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 18 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 900 pF @ 15 V |
Produkt ist nicht verfügbar |
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NTJD4158CT2G | onsemi |
Description: MOSFET N/P-CH 30V/20V 0.25A SC88 Packaging: Tape & Reel (TR) Package / Case: 6-TSSOP, SC-88, SOT-363 Mounting Type: Surface Mount Configuration: N and P-Channel Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 270mW Drain to Source Voltage (Vdss): 30V, 20V Current - Continuous Drain (Id) @ 25°C: 250mA, 880mA Input Capacitance (Ciss) (Max) @ Vds: 33pF @ 5V Rds On (Max) @ Id, Vgs: 1.5Ohm @ 10mA, 4.5V Gate Charge (Qg) (Max) @ Vgs: 1.5nC @ 5V FET Feature: Logic Level Gate Vgs(th) (Max) @ Id: 1.5V @ 100µA Supplier Device Package: SC-88/SC70-6/SOT-363 |
Produkt ist nicht verfügbar |
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NTJS4160NT1G | onsemi |
Description: MOSFET N-CH 30V 1.8A SC88/SC70-6 Packaging: Tape & Reel (TR) Package / Case: 6-TSSOP, SC-88, SOT-363 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 1.8A (Ta) Rds On (Max) @ Id, Vgs: 60mOhm @ 2.6A, 10V Power Dissipation (Max): 300mW (Ta) Vgs(th) (Max) @ Id: 2.4V @ 250µA Supplier Device Package: SC-88/SC70-6/SOT-363 Part Status: Obsolete Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 2.75 nC @ 4.5 V Input Capacitance (Ciss) (Max) @ Vds: 230 pF @ 10 V |
Produkt ist nicht verfügbar |
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NTK3139PT1G | onsemi |
Description: MOSFET P-CH 20V 660MA SOT723 Packaging: Tape & Reel (TR) Package / Case: SOT-723 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 660mA (Ta) Rds On (Max) @ Id, Vgs: 480mOhm @ 780mA, 4.5V Power Dissipation (Max): 310mW (Ta) Vgs(th) (Max) @ Id: 1.2V @ 250µA Supplier Device Package: SOT-723 Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4.5V Vgs (Max): ±6V Drain to Source Voltage (Vdss): 20 V Input Capacitance (Ciss) (Max) @ Vds: 170 pF @ 16 V |
auf Bestellung 28000 Stücke: Lieferzeit 10-14 Tag (e) |
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NTK3139PT5G | onsemi |
Description: MOSFET P-CH 20V 660MA SOT723 Packaging: Tape & Reel (TR) Package / Case: SOT-723 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 660mA (Ta) Rds On (Max) @ Id, Vgs: 480mOhm @ 780mA, 4.5V Power Dissipation (Max): 310mW (Ta) Vgs(th) (Max) @ Id: 1.2V @ 250µA Supplier Device Package: SOT-723 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4.5V Vgs (Max): ±6V Drain to Source Voltage (Vdss): 20 V Input Capacitance (Ciss) (Max) @ Vds: 170 pF @ 16 V |
auf Bestellung 14100 Stücke: Lieferzeit 10-14 Tag (e) |
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NTLJD3115PTAG | onsemi |
Description: MOSFET 2P-CH 20V 2.3A 6WDFN Packaging: Tape & Reel (TR) Package / Case: 6-WDFN Exposed Pad Mounting Type: Surface Mount Configuration: 2 P-Channel (Dual) Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 710mW Drain to Source Voltage (Vdss): 20V Current - Continuous Drain (Id) @ 25°C: 2.3A Input Capacitance (Ciss) (Max) @ Vds: 531pF @ 10V Rds On (Max) @ Id, Vgs: 100mOhm @ 2A, 4.5V Gate Charge (Qg) (Max) @ Vgs: 6.2nC @ 4.5V FET Feature: Logic Level Gate Vgs(th) (Max) @ Id: 1V @ 250µA Supplier Device Package: 6-WDFN (2x2) |
Produkt ist nicht verfügbar |
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NTLJD3119CTAG | onsemi |
Description: MOSFET N/P-CH 20V 2.6A 6WDFN Packaging: Tape & Reel (TR) Package / Case: 6-WDFN Exposed Pad Mounting Type: Surface Mount Configuration: N and P-Channel Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 710mW Drain to Source Voltage (Vdss): 20V Current - Continuous Drain (Id) @ 25°C: 2.6A, 2.3A Input Capacitance (Ciss) (Max) @ Vds: 271pF @ 10V Rds On (Max) @ Id, Vgs: 65mOhm @ 3.8A, 4.5V Gate Charge (Qg) (Max) @ Vgs: 3.7nC @ 4.5V FET Feature: Logic Level Gate Vgs(th) (Max) @ Id: 1V @ 250µA Supplier Device Package: 6-WDFN (2x2) |
Produkt ist nicht verfügbar |
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NTLJD3119CTBG | onsemi |
Description: MOSFET N/P-CH 20V 2.6A 6WDFN Packaging: Tape & Reel (TR) Package / Case: 6-WDFN Exposed Pad Mounting Type: Surface Mount Configuration: N and P-Channel Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 710mW Drain to Source Voltage (Vdss): 20V Current - Continuous Drain (Id) @ 25°C: 2.6A, 2.3A Input Capacitance (Ciss) (Max) @ Vds: 271pF @ 10V Rds On (Max) @ Id, Vgs: 65mOhm @ 3.8A, 4.5V Gate Charge (Qg) (Max) @ Vgs: 3.7nC @ 4.5V FET Feature: Logic Level Gate Vgs(th) (Max) @ Id: 1V @ 250µA Supplier Device Package: 6-WDFN (2x2) Part Status: Active |
auf Bestellung 24000 Stücke: Lieferzeit 10-14 Tag (e) |
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NTLJF3117PT1G | onsemi |
Description: MOSFET P-CH 20V 2.3A 6WDFN Packaging: Tape & Reel (TR) Package / Case: 6-WDFN Exposed Pad Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 2.3A (Ta) Rds On (Max) @ Id, Vgs: 100mOhm @ 2A, 4.5V FET Feature: Schottky Diode (Isolated) Power Dissipation (Max): 710mW (Ta) Vgs(th) (Max) @ Id: 1V @ 250µA Supplier Device Package: 6-WDFN (2x2) Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V Vgs (Max): ±8V Drain to Source Voltage (Vdss): 20 V Gate Charge (Qg) (Max) @ Vgs: 6.2 nC @ 4.5 V Input Capacitance (Ciss) (Max) @ Vds: 531 pF @ 10 V |
auf Bestellung 3000 Stücke: Lieferzeit 10-14 Tag (e) |
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NTLJF3117PTAG | onsemi |
Description: MOSFET P-CH 20V 2.3A 6WDFN |
Produkt ist nicht verfügbar |
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NTLJF3118NTAG | onsemi |
Description: MOSFET N-CH 20V 2.6A 6WDFN Packaging: Tape & Reel (TR) Package / Case: 6-WDFN Exposed Pad Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 2.6A (Ta) Rds On (Max) @ Id, Vgs: 65mOhm @ 3.8A, 4.5V FET Feature: Schottky Diode (Isolated) Power Dissipation (Max): 700mW (Ta) Vgs(th) (Max) @ Id: 1V @ 250µA Supplier Device Package: 6-WDFN (2x2) Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V Vgs (Max): ±12V Drain to Source Voltage (Vdss): 20 V Gate Charge (Qg) (Max) @ Vgs: 3.7 nC @ 4.5 V Input Capacitance (Ciss) (Max) @ Vds: 271 pF @ 10 V |
Produkt ist nicht verfügbar |
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NTLJF3118NTBG | onsemi |
Description: MOSFET N-CH 20V 2.6A 6WDFN |
Produkt ist nicht verfügbar |
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NTLJS2103PTAG | onsemi |
Description: MOSFET P-CH 12V 3.5A 6WDFN Packaging: Tape & Reel (TR) Package / Case: 6-WDFN Exposed Pad Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 3.5A (Ta) Rds On (Max) @ Id, Vgs: 40mOhm @ 3A, 4.5V Power Dissipation (Max): 700mW (Ta) Vgs(th) (Max) @ Id: 800mV @ 250µA Supplier Device Package: 6-WDFN (2x2) Part Status: Obsolete Drive Voltage (Max Rds On, Min Rds On): 1.2V, 4.5V Vgs (Max): ±8V Drain to Source Voltage (Vdss): 12 V Gate Charge (Qg) (Max) @ Vgs: 15 nC @ 4.5 V Input Capacitance (Ciss) (Max) @ Vds: 1157 pF @ 6 V |
Produkt ist nicht verfügbar |
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NTLJS2103PTBG | onsemi |
Description: MOSFET P-CH 12V 3.5A 6WDFN Packaging: Tape & Reel (TR) Package / Case: 6-WDFN Exposed Pad Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 3.5A (Ta) Rds On (Max) @ Id, Vgs: 40mOhm @ 3A, 4.5V Power Dissipation (Max): 700mW (Ta) Vgs(th) (Max) @ Id: 800mV @ 250µA Supplier Device Package: 6-WDFN (2x2) Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 1.2V, 4.5V Vgs (Max): ±8V Drain to Source Voltage (Vdss): 12 V Gate Charge (Qg) (Max) @ Vgs: 15 nC @ 4.5 V Input Capacitance (Ciss) (Max) @ Vds: 1157 pF @ 6 V |
auf Bestellung 21000 Stücke: Lieferzeit 10-14 Tag (e) |
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NTLJS4114NT1G | onsemi |
Description: MOSFET N-CH 30V 3.6A 6WDFN Packaging: Tape & Reel (TR) Package / Case: 6-WDFN Exposed Pad Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 3.6A (Ta) Rds On (Max) @ Id, Vgs: 35mOhm @ 2A, 4.5V Power Dissipation (Max): 700mW (Ta) Vgs(th) (Max) @ Id: 1V @ 250µA Supplier Device Package: 6-WDFN (2x2) Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V Vgs (Max): ±12V Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 13 nC @ 4.5 V Input Capacitance (Ciss) (Max) @ Vds: 650 pF @ 15 V |
Produkt ist nicht verfügbar |
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NTMD4840NR2G | onsemi |
Description: MOSFET 2N-CH 30V 4.5A 8SOIC Packaging: Tape & Reel (TR) Package / Case: 8-SOIC (0.154", 3.90mm Width) Mounting Type: Surface Mount Configuration: 2 N-Channel (Dual) Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 680mW Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 4.5A Input Capacitance (Ciss) (Max) @ Vds: 520pF @ 15V Rds On (Max) @ Id, Vgs: 24mOhm @ 6.9A, 10V Gate Charge (Qg) (Max) @ Vgs: 9.5nC @ 10V FET Feature: Logic Level Gate Vgs(th) (Max) @ Id: 3V @ 250µA Supplier Device Package: 8-SOIC |
Produkt ist nicht verfügbar |
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NTMFS4744NT1G | onsemi |
Description: MOSFET N-CH 30V 7A 5DFN |
Produkt ist nicht verfügbar |
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NTMFS4744NT3G | onsemi |
Description: MOSFET N-CH 30V 7A 5DFN |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||
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NTMFS4833NT1G | onsemi |
Description: MOSFET N-CH 30V 16A/156A 5DFN Packaging: Tape & Reel (TR) Package / Case: 8-PowerTDFN, 5 Leads Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 16A (Ta), 156A (Tc) Rds On (Max) @ Id, Vgs: 2mOhm @ 30A, 10V Power Dissipation (Max): 910mW (Ta), 125W (Tc) Vgs(th) (Max) @ Id: 2.5V @ 250µA Supplier Device Package: 5-DFN (5x6) (8-SOFL) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 88 nC @ 11.5 V Input Capacitance (Ciss) (Max) @ Vds: 5600 pF @ 12 V |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||
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NTMFS4833NT3G | onsemi |
Description: MOSFET N-CH 30V 16A/156A 5DFN Packaging: Tape & Reel (TR) Package / Case: 8-PowerTDFN, 5 Leads Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 16A (Ta), 156A (Tc) Rds On (Max) @ Id, Vgs: 2mOhm @ 30A, 10V Power Dissipation (Max): 910mW (Ta), 125W (Tc) Vgs(th) (Max) @ Id: 2.5V @ 250µA Supplier Device Package: 5-DFN (5x6) (8-SOFL) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 88 nC @ 11.5 V Input Capacitance (Ciss) (Max) @ Vds: 5600 pF @ 12 V |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||
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NTMFS4834NT1G | onsemi |
Description: MOSFET N-CH 30V 13A/130A 5DFN Packaging: Tape & Reel (TR) Package / Case: 8-PowerTDFN, 5 Leads Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 13A (Ta), 130A (Tc) Rds On (Max) @ Id, Vgs: 3mOhm @ 30A, 10V Power Dissipation (Max): 900mW (Ta), 86.2W (Tc) Vgs(th) (Max) @ Id: 2.5V @ 250µA Supplier Device Package: 5-DFN (5x6) (8-SOFL) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 11.5V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 48 nC @ 4.5 V Input Capacitance (Ciss) (Max) @ Vds: 4500 pF @ 12 V |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||
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NTMFS4835NT1G | onsemi |
Description: MOSFET N-CH 30V 13A/130A 5DFN Packaging: Tape & Reel (TR) Package / Case: 8-PowerTDFN, 5 Leads Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 13A (Ta), 130A (Tc) Rds On (Max) @ Id, Vgs: 3.5mOhm @ 30A, 10V Power Dissipation (Max): 890mW (Ta), 62.5W (Tc) Vgs(th) (Max) @ Id: 2.5V @ 250µA Supplier Device Package: 5-DFN (5x6) (8-SOFL) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 11.5V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 52 nC @ 11.5 V Input Capacitance (Ciss) (Max) @ Vds: 3100 pF @ 12 V |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||
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NTMFS4836NT1G | onsemi |
Description: MOSFET N-CH 30V 11A/90A 5DFN Packaging: Tape & Reel (TR) Package / Case: 8-PowerTDFN, 5 Leads Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 11A (Ta), 90A (Tc) Rds On (Max) @ Id, Vgs: 4mOhm @ 30A, 10V Power Dissipation (Max): 890mW (Ta), 55.6W (Tc) Vgs(th) (Max) @ Id: 2.5V @ 250µA Supplier Device Package: 5-DFN (5x6) (8-SOFL) Part Status: Obsolete Drive Voltage (Max Rds On, Min Rds On): 4.5V, 11.5V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 28 nC @ 4.5 V Input Capacitance (Ciss) (Max) @ Vds: 2677 pF @ 12 V |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||
| NTMFS4836NT3G | onsemi |
Description: MOSFET N-CH 30V 11A/90A 5DFN Packaging: Tape & Reel (TR) Package / Case: 8-PowerTDFN, 5 Leads Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 11A (Ta), 90A (Tc) Rds On (Max) @ Id, Vgs: 4mOhm @ 30A, 10V Power Dissipation (Max): 890mW (Ta), 55.6W (Tc) Vgs(th) (Max) @ Id: 2.5V @ 250µA Supplier Device Package: 5-DFN (5x6) (8-SOFL) Part Status: Obsolete Drive Voltage (Max Rds On, Min Rds On): 4.5V, 11.5V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 28 nC @ 4.5 V Input Capacitance (Ciss) (Max) @ Vds: 2677 pF @ 12 V |
Produkt ist nicht verfügbar |
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NTMFS4837NHT1G | onsemi |
Description: MOSFET N-CH 30V 10.2A/75A 5DFN Packaging: Tape & Reel (TR) Package / Case: 8-PowerTDFN, 5 Leads Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 10.2A (Ta), 75A (Tc) Rds On (Max) @ Id, Vgs: 5mOhm @ 30A, 10V Power Dissipation (Max): 880mW (Ta), 48W (Tc) Vgs(th) (Max) @ Id: 2.5V @ 250µA Supplier Device Package: 5-DFN (5x6) (8-SOFL) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 11.5V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 23.8 nC @ 4.5 V Input Capacitance (Ciss) (Max) @ Vds: 3016 pF @ 12 V |
Produkt ist nicht verfügbar |
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NTMFS4837NT1G | onsemi |
Description: MOSFET N-CH 30V 10A/74A 5DFN Packaging: Tape & Reel (TR) Package / Case: 8-PowerTDFN, 5 Leads Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 10A (Ta), 74A (Tc) Rds On (Max) @ Id, Vgs: 5mOhm @ 30A, 10V Power Dissipation (Max): 880mW (Ta), 47.2W (Tc) Vgs(th) (Max) @ Id: 2.5V @ 250µA Supplier Device Package: 5-DFN (5x6) (8-SOFL) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 11.5V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 22 nC @ 4.5 V Input Capacitance (Ciss) (Max) @ Vds: 2048 pF @ 12 V |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||
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NTMFS4839NHT1G | onsemi |
Description: MOSFET N-CH 30V 9.5A/64A 5DFN Packaging: Tape & Reel (TR) Package / Case: 8-PowerTDFN, 5 Leads Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 9.5A (Ta), 64A (Tc) Rds On (Max) @ Id, Vgs: 5.5mOhm @ 30A, 10V Power Dissipation (Max): 870mW (Ta), 42.4W (Tc) Vgs(th) (Max) @ Id: 2.5V @ 250µA Supplier Device Package: 5-DFN (5x6) (8-SOFL) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 11.5V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 43.5 nC @ 11.5 V Input Capacitance (Ciss) (Max) @ Vds: 2354 pF @ 12 V |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||
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NTMS4816NR2G | onsemi |
Description: MOSFET N-CH 30V 6.8A 8SOIC Packaging: Tape & Reel (TR) Package / Case: 8-SOIC (0.154", 3.90mm Width) Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 6.8A (Ta) Rds On (Max) @ Id, Vgs: 10mOhm @ 9A, 10V Power Dissipation (Max): 780mW (Ta) Vgs(th) (Max) @ Id: 3V @ 250µA Supplier Device Package: 8-SOIC Part Status: Obsolete Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 18.3 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1060 pF @ 25 V |
Produkt ist nicht verfügbar |
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NTR4003NT1G | onsemi |
Description: MOSFET N-CH 30V 500MA SOT23-3 Packaging: Tape & Reel (TR) Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 500mA (Ta) Rds On (Max) @ Id, Vgs: 1.5Ohm @ 10mA, 4V Power Dissipation (Max): 690mW (Ta) Vgs(th) (Max) @ Id: 1.4V @ 250µA Supplier Device Package: SOT-23-3 (TO-236) Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 1.15 nC @ 5 V Input Capacitance (Ciss) (Max) @ Vds: 21 pF @ 5 V |
auf Bestellung 207000 Stücke: Lieferzeit 10-14 Tag (e) |
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NTR4003NT3G | onsemi |
Description: MOSFET N-CH 30V 500MA SOT23-3 Packaging: Tape & Reel (TR) Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 500mA (Ta) Rds On (Max) @ Id, Vgs: 1.5Ohm @ 10mA, 4V Power Dissipation (Max): 690mW (Ta) Vgs(th) (Max) @ Id: 1.4V @ 250µA Supplier Device Package: SOT-23-3 (TO-236) Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 1.15 nC @ 5 V Input Capacitance (Ciss) (Max) @ Vds: 21 pF @ 5 V |
auf Bestellung 200000 Stücke: Lieferzeit 10-14 Tag (e) |
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| NTUD3127CT5G | onsemi |
Description: MOSFET N/P-CH 20V 0.16A SOT963 Packaging: Tape & Reel (TR) Package / Case: SOT-963 Mounting Type: Surface Mount Configuration: N and P-Channel Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 125mW Drain to Source Voltage (Vdss): 20V Current - Continuous Drain (Id) @ 25°C: 160mA, 140mA Input Capacitance (Ciss) (Max) @ Vds: 9pF @ 15V Rds On (Max) @ Id, Vgs: 3Ohm @ 100mA, 4.5V FET Feature: Logic Level Gate Vgs(th) (Max) @ Id: 1V @ 250µA Supplier Device Package: SOT-963 |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||
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NTZD5110NT1G | onsemi |
Description: MOSFET 2N-CH 60V 0.294A SOT563 Packaging: Tape & Reel (TR) Package / Case: SOT-563, SOT-666 Mounting Type: Surface Mount Configuration: 2 N-Channel (Dual) Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 250mW Drain to Source Voltage (Vdss): 60V Current - Continuous Drain (Id) @ 25°C: 294mA Input Capacitance (Ciss) (Max) @ Vds: 24.5pF @ 20V Rds On (Max) @ Id, Vgs: 1.6Ohm @ 500mA, 10V Gate Charge (Qg) (Max) @ Vgs: 0.7nC @ 4.5V FET Feature: Logic Level Gate Vgs(th) (Max) @ Id: 2.5V @ 250µA Supplier Device Package: SOT-563 |
auf Bestellung 16000 Stücke: Lieferzeit 10-14 Tag (e) |
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NTZD5110NT5G | onsemi |
Description: MOSFET 2N-CH 60V 0.294A SOT563 Packaging: Tape & Reel (TR) Package / Case: SOT-563, SOT-666 Mounting Type: Surface Mount Configuration: 2 N-Channel (Dual) Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 250mW Drain to Source Voltage (Vdss): 60V Current - Continuous Drain (Id) @ 25°C: 294mA Input Capacitance (Ciss) (Max) @ Vds: 24.5pF @ 20V Rds On (Max) @ Id, Vgs: 1.6Ohm @ 500mA, 10V Gate Charge (Qg) (Max) @ Vgs: 0.7nC @ 4.5V FET Feature: Logic Level Gate Vgs(th) (Max) @ Id: 2.5V @ 250µA Supplier Device Package: SOT-563 |
Produkt ist nicht verfügbar |
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NUF2450MUT2G | onsemi |
Description: FILTER LC(PI) 2.3NH/240PF SMD Packaging: Tape & Reel (TR) Package / Case: 8-UFDFN Exposed Pad Size / Dimension: 0.071" L x 0.047" W (1.80mm x 1.20mm) Mounting Type: Surface Mount Type: Low Pass Operating Temperature: -40°C ~ 85°C Values: L = 2.3nH, C = 240pF Height: 0.022" (0.55mm) Attenuation Value: -30dB @ 800MHz ~ 5GHz Filter Order: 3rd Applications: Audio Technology: LC (Pi) Center / Cutoff Frequency: 20MHz (Cutoff) Resistance - Channel (Ohms): 1.3 ESD Protection: Yes Number of Channels: 2 |
Produkt ist nicht verfügbar |
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NUF3102MUTAG | onsemi |
Description: FILTER RC(PI) 150MHZ ESD SMD Packaging: Tape & Reel (TR) Package / Case: 8-UFDFN Exposed Pad Size / Dimension: 0.071" L x 0.047" W (1.80mm x 1.20mm) Mounting Type: Surface Mount Type: Low Pass Operating Temperature: -40°C ~ 85°C Values: R = 47Ohm, 100Ohm, C = 13pF Height: 0.022" (0.55mm) Attenuation Value: -25dB @ 800MHz ~ 5GHz Filter Order: 2nd Applications: Data Lines for Mobile Devices Technology: RC (Pi) Center / Cutoff Frequency: 150MHz (Cutoff) Resistance - Channel (Ohms): 47, 100 ESD Protection: Yes Part Status: Active Number of Channels: 3 |
auf Bestellung 45000 Stücke: Lieferzeit 10-14 Tag (e) |
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NUF4001MUT2G | onsemi |
Description: FILTER RC(PI) 100 OHMS ESD SMD Packaging: Tape & Reel (TR) Package / Case: 8-UFDFN Exposed Pad Size / Dimension: 0.071" L x 0.047" W (1.80mm x 1.20mm) Mounting Type: Surface Mount Type: Low Pass Operating Temperature: -40°C ~ 85°C Values: R = 100Ohms, C = 13pF Height: 0.022" (0.55mm) Attenuation Value: -25dB @ 800MHz ~ 5GHz Filter Order: 2nd Applications: Data Lines for Mobile Devices Technology: RC (Pi) Center / Cutoff Frequency: 150MHz (Cutoff) Resistance - Channel (Ohms): 100 ESD Protection: Yes Part Status: Active Number of Channels: 4 |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||
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NUF4211MNT1G | onsemi |
Description: FILTER RC(PI) 100 OHM/8.5PF SMD Packaging: Tape & Reel (TR) Package / Case: 8-VFDFN Exposed Pad Size / Dimension: 0.079" L x 0.079" W (2.00mm x 2.00mm) Mounting Type: Surface Mount Type: Low Pass Operating Temperature: -40°C ~ 85°C Values: R = 100Ohms, C = 8.5pF Height: 0.039" (1.00mm) Attenuation Value: -20dB @ 800MHz ~ 3GHz Filter Order: 2nd Applications: Data Lines for Mobile Devices Technology: RC (Pi) Center / Cutoff Frequency: 250MHz (Cutoff) Resistance - Channel (Ohms): 100 ESD Protection: Yes Number of Channels: 4 |
auf Bestellung 3000 Stücke: Lieferzeit 10-14 Tag (e) |
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NUF6005MUT2G | onsemi |
Description: FILTER RC(PI) 100 OHMS ESD SMD Packaging: Tape & Reel (TR) Package / Case: 12-UFDFN Exposed Pad Size / Dimension: 0.098" L x 0.047" W (2.50mm x 1.20mm) Mounting Type: Surface Mount Type: Low Pass Operating Temperature: -40°C ~ 85°C Values: R = 100Ohms, C = 10pF Height: 0.022" (0.55mm) Attenuation Value: -25dB @ 800MHz ~ 3GHz Filter Order: 2nd Applications: Data Lines for Mobile Devices Technology: RC (Pi) Center / Cutoff Frequency: 185MHz (Cutoff) Resistance - Channel (Ohms): 100 ESD Protection: Yes Number of Channels: 6 |
Produkt ist nicht verfügbar |
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NUF6010MUT2G | onsemi |
Description: FILTER RC(PI) 100 OHM/7PF SMD Packaging: Tape & Reel (TR) Package / Case: 12-UFDFN Exposed Pad Size / Dimension: 0.098" L x 0.047" W (2.50mm x 1.20mm) Mounting Type: Surface Mount Type: Low Pass Operating Temperature: -40°C ~ 85°C Values: R = 100Ohms, C = 7pF Height: 0.022" (0.55mm) Attenuation Value: -20dB @ 800MHz ~ 3GHz Filter Order: 2nd Applications: Data Lines for Mobile Devices Technology: RC (Pi) Center / Cutoff Frequency: 250MHz (Cutoff) Resistance - Channel (Ohms): 100 ESD Protection: Yes Part Status: Active Number of Channels: 6 |
auf Bestellung 3000 Stücke: Lieferzeit 10-14 Tag (e) |
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NUF6107MNTBG | onsemi |
Description: FILTER RC(PI) 100 OHM/30PF SMD Packaging: Tape & Reel (TR) Package / Case: 12-VFDFN Exposed Pad Size / Dimension: 0.118" L x 0.053" W (3.00mm x 1.35mm) Mounting Type: Surface Mount Type: Low Pass Operating Temperature: -40°C ~ 85°C Values: R = 100Ohms, C = 30pF Height: 0.039" (1.00mm) Attenuation Value: -35dB @ 800MHz ~ 2.2GHz Filter Order: 2nd Applications: Data Lines for Mobile Devices Technology: RC (Pi) Resistance - Channel (Ohms): 100 ESD Protection: Yes Number of Channels: 4 |
Produkt ist nicht verfügbar |
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NUF6400MNTBG | onsemi |
Description: FILTER RC(PI) 100 OHMSESD SMD Packaging: Tape & Reel (TR) Package / Case: 12-VFDFN Exposed Pad Size / Dimension: 0.118" L x 0.053" W (3.00mm x 1.35mm) Mounting Type: Surface Mount Type: Low Pass Operating Temperature: -40°C ~ 85°C Values: R = 100Ohms, C = 50pF Height: 0.039" (1.00mm) Attenuation Value: -30dB @ 800MHz ~ 2.4GHz Filter Order: 2nd Applications: Data Lines for Mobile Devices Technology: RC (Pi) Center / Cutoff Frequency: 35MHz (Cutoff) Resistance - Channel (Ohms): 100 ESD Protection: Yes Part Status: Active Number of Channels: 6 Current: 20 mA |
auf Bestellung 55500 Stücke: Lieferzeit 10-14 Tag (e) |
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NUF6410MNT1G | onsemi |
Description: FILTER RC(PI) 100 OHM/7PF SMD Packaging: Tape & Reel (TR) Package / Case: 12-VFDFN Exposed Pad Size / Dimension: 0.118" L x 0.053" W (3.00mm x 1.35mm) Mounting Type: Surface Mount Type: Low Pass Operating Temperature: -40°C ~ 85°C Values: R = 100Ohms, C = 7pF Height: 0.039" (1.00mm) Attenuation Value: -20dB @ 800MHz ~ 3GHz Filter Order: 2nd Applications: Data Lines for Mobile Devices Technology: RC (Pi) Center / Cutoff Frequency: 250MHz (Cutoff) Resistance - Channel (Ohms): 100 ESD Protection: Yes Number of Channels: 6 |
auf Bestellung 3000 Stücke: Lieferzeit 10-14 Tag (e) |
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NUF8000MUT2G | onsemi |
Description: FILTER RC(PI) 100 OHM/15PF SMD Packaging: Tape & Reel (TR) Package / Case: 16-UFDFN Exposed Pad Size / Dimension: 0.138" L x 0.047" W (3.50mm x 1.20mm) Mounting Type: Surface Mount Type: Low Pass Operating Temperature: -40°C ~ 85°C Values: R = 100Ohms, C = 15pF Height: 0.022" (0.55mm) Attenuation Value: -30dB @ 800MHz ~ 5GHz Filter Order: 2nd Applications: Data Lines for Mobile Devices Technology: RC (Pi) Center / Cutoff Frequency: 95MHz (Cutoff) Resistance - Channel (Ohms): 100 ESD Protection: Yes Number of Channels: 8 |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH |
| NTD4858NT4G |
|
Hersteller: onsemi
Description: MOSFET N-CH 25V 11.2A/73A DPAK
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 155°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 11.2A (Ta), 73A (Tc)
Rds On (Max) @ Id, Vgs: 6.2mOhm @ 30A, 10V
Power Dissipation (Max): 1.3W (Ta), 54.5W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: DPAK
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 25 V
Gate Charge (Qg) (Max) @ Vgs: 19.2 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 1563 pF @ 12 V
Description: MOSFET N-CH 25V 11.2A/73A DPAK
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 155°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 11.2A (Ta), 73A (Tc)
Rds On (Max) @ Id, Vgs: 6.2mOhm @ 30A, 10V
Power Dissipation (Max): 1.3W (Ta), 54.5W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: DPAK
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 25 V
Gate Charge (Qg) (Max) @ Vgs: 19.2 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 1563 pF @ 12 V
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| NTD4860NT4G |
|
Hersteller: onsemi
Description: MOSFET N-CH 25V 10.4A/65A DPAK
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 155°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 10.4A (Ta), 65A (Tc)
Rds On (Max) @ Id, Vgs: 7.5mOhm @ 30A, 10V
Power Dissipation (Max): 1.28W (Ta), 50W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: DPAK
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 25 V
Gate Charge (Qg) (Max) @ Vgs: 16.5 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 1308 pF @ 12 V
Description: MOSFET N-CH 25V 10.4A/65A DPAK
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 155°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 10.4A (Ta), 65A (Tc)
Rds On (Max) @ Id, Vgs: 7.5mOhm @ 30A, 10V
Power Dissipation (Max): 1.28W (Ta), 50W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: DPAK
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 25 V
Gate Charge (Qg) (Max) @ Vgs: 16.5 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 1308 pF @ 12 V
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| NTD4863N-1G |
|
Hersteller: onsemi
Description: MOSFET N-CH 25V 9.2A/49A IPAK
Description: MOSFET N-CH 25V 9.2A/49A IPAK
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| NTD4863N-35G |
|
Hersteller: onsemi
Description: MOSFET N-CH 25V 9.2A/49A IPAK
Packaging: Tube
Package / Case: TO-251-3 Stub Leads, IPak
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 9.2A (Ta), 49A (Tc)
Rds On (Max) @ Id, Vgs: 9.3mOhm @ 30A, 10V
Power Dissipation (Max): 1.27W (Ta), 36.6W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: IPAK
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 25 V
Gate Charge (Qg) (Max) @ Vgs: 13.5 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 990 pF @ 12 V
Description: MOSFET N-CH 25V 9.2A/49A IPAK
Packaging: Tube
Package / Case: TO-251-3 Stub Leads, IPak
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 9.2A (Ta), 49A (Tc)
Rds On (Max) @ Id, Vgs: 9.3mOhm @ 30A, 10V
Power Dissipation (Max): 1.27W (Ta), 36.6W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: IPAK
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 25 V
Gate Charge (Qg) (Max) @ Vgs: 13.5 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 990 pF @ 12 V
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| NTD4863NT4G |
|
Hersteller: onsemi
Description: MOSFET N-CH 25V 9.2A/49A DPAK
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 9.2A (Ta), 49A (Tc)
Rds On (Max) @ Id, Vgs: 9.3mOhm @ 30A, 10V
Power Dissipation (Max): 1.27W (Ta), 36.6W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: DPAK
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 25 V
Gate Charge (Qg) (Max) @ Vgs: 13.5 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 990 pF @ 12 V
Description: MOSFET N-CH 25V 9.2A/49A DPAK
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 9.2A (Ta), 49A (Tc)
Rds On (Max) @ Id, Vgs: 9.3mOhm @ 30A, 10V
Power Dissipation (Max): 1.27W (Ta), 36.6W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: DPAK
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 25 V
Gate Charge (Qg) (Max) @ Vgs: 13.5 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 990 pF @ 12 V
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| NTGD4161PT1G |
|
Hersteller: onsemi
Description: MOSFET 2P-CH 30V 1.5A 6TSOP
Packaging: Tape & Reel (TR)
Package / Case: SOT-23-6 Thin, TSOT-23-6
Mounting Type: Surface Mount
Configuration: 2 P-Channel (Dual)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 600mW
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 1.5A
Input Capacitance (Ciss) (Max) @ Vds: 281pF @ 15V
Rds On (Max) @ Id, Vgs: 160mOhm @ 2.1A, 10V
Gate Charge (Qg) (Max) @ Vgs: 7.1nC @ 10V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: 6-TSOP
Description: MOSFET 2P-CH 30V 1.5A 6TSOP
Packaging: Tape & Reel (TR)
Package / Case: SOT-23-6 Thin, TSOT-23-6
Mounting Type: Surface Mount
Configuration: 2 P-Channel (Dual)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 600mW
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 1.5A
Input Capacitance (Ciss) (Max) @ Vds: 281pF @ 15V
Rds On (Max) @ Id, Vgs: 160mOhm @ 2.1A, 10V
Gate Charge (Qg) (Max) @ Vgs: 7.1nC @ 10V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: 6-TSOP
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| NTGS3130NT1G |
|
Hersteller: onsemi
Description: MOSFET N-CH 20V 4.23A 6TSOP
Packaging: Tape & Reel (TR)
Package / Case: SOT-23-6 Thin, TSOT-23-6
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 4.23A (Ta)
Rds On (Max) @ Id, Vgs: 24mOhm @ 5.6A, 4.5V
Power Dissipation (Max): 600mW (Ta)
Vgs(th) (Max) @ Id: 1.4V @ 250µA
Supplier Device Package: 6-TSOP
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
Vgs (Max): ±8V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 20.3 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 935 pF @ 16 V
Description: MOSFET N-CH 20V 4.23A 6TSOP
Packaging: Tape & Reel (TR)
Package / Case: SOT-23-6 Thin, TSOT-23-6
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 4.23A (Ta)
Rds On (Max) @ Id, Vgs: 24mOhm @ 5.6A, 4.5V
Power Dissipation (Max): 600mW (Ta)
Vgs(th) (Max) @ Id: 1.4V @ 250µA
Supplier Device Package: 6-TSOP
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
Vgs (Max): ±8V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 20.3 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 935 pF @ 16 V
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| NTGS3136PT1G |
|
Hersteller: onsemi
Description: MOSFET P-CH 20V 3.7A 6TSOP
Packaging: Tape & Reel (TR)
Package / Case: SOT-23-6 Thin, TSOT-23-6
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 3.7A (Ta)
Rds On (Max) @ Id, Vgs: 33mOhm @ 5.1A, 4.5V
Power Dissipation (Max): 700mW (Ta)
Vgs(th) (Max) @ Id: 1V @ 250µA
Supplier Device Package: 6-TSOP
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
Vgs (Max): ±8V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 29 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 1901 pF @ 10 V
Description: MOSFET P-CH 20V 3.7A 6TSOP
Packaging: Tape & Reel (TR)
Package / Case: SOT-23-6 Thin, TSOT-23-6
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 3.7A (Ta)
Rds On (Max) @ Id, Vgs: 33mOhm @ 5.1A, 4.5V
Power Dissipation (Max): 700mW (Ta)
Vgs(th) (Max) @ Id: 1V @ 250µA
Supplier Device Package: 6-TSOP
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
Vgs (Max): ±8V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 29 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 1901 pF @ 10 V
auf Bestellung 51000 Stücke:
Lieferzeit 10-14 Tag (e)| Anzahl | Preis |
|---|---|
| 3000+ | 0.66 EUR |
| 6000+ | 0.61 EUR |
| 15000+ | 0.59 EUR |
| 30000+ | 0.57 EUR |
| NTGS3441BT1G |
|
Hersteller: onsemi
Description: MOSFET P-CH 20V 2.2A 6TSOP
Packaging: Tape & Reel (TR)
Package / Case: SOT-23-6 Thin, TSOT-23-6
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 2.2A (Ta)
Rds On (Max) @ Id, Vgs: 90mOhm @ 3A, 4.5V
Power Dissipation (Max): 700mW (Ta)
Vgs(th) (Max) @ Id: 900mV @ 250µA
Supplier Device Package: 6-TSOP
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
Vgs (Max): ±8V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 9 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 630 pF @ 10 V
Description: MOSFET P-CH 20V 2.2A 6TSOP
Packaging: Tape & Reel (TR)
Package / Case: SOT-23-6 Thin, TSOT-23-6
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 2.2A (Ta)
Rds On (Max) @ Id, Vgs: 90mOhm @ 3A, 4.5V
Power Dissipation (Max): 700mW (Ta)
Vgs(th) (Max) @ Id: 900mV @ 250µA
Supplier Device Package: 6-TSOP
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
Vgs (Max): ±8V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 9 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 630 pF @ 10 V
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| NTGS3441PT1G |
|
Hersteller: onsemi
Description: MOSFET P-CH 20V 1.8A 6TSOP
Packaging: Tape & Reel (TR)
Package / Case: SOT-23-6 Thin, TSOT-23-6
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 1.8A (Ta)
Rds On (Max) @ Id, Vgs: 110mOhm @ 3A, 4.5V
Power Dissipation (Max): 510mW (Ta)
Vgs(th) (Max) @ Id: 1.6V @ 250µA
Supplier Device Package: 6-TSOP
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
Vgs (Max): ±12V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 6 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 345 pF @ 15 V
Description: MOSFET P-CH 20V 1.8A 6TSOP
Packaging: Tape & Reel (TR)
Package / Case: SOT-23-6 Thin, TSOT-23-6
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 1.8A (Ta)
Rds On (Max) @ Id, Vgs: 110mOhm @ 3A, 4.5V
Power Dissipation (Max): 510mW (Ta)
Vgs(th) (Max) @ Id: 1.6V @ 250µA
Supplier Device Package: 6-TSOP
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
Vgs (Max): ±12V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 6 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 345 pF @ 15 V
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| NTGS3443BT1G |
|
Hersteller: onsemi
Description: MOSFET P-CH 20V 2.7A 6TSOP
Packaging: Tape & Reel (TR)
Package / Case: SOT-23-6 Thin, TSOT-23-6
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 2.7A (Ta)
Rds On (Max) @ Id, Vgs: 60mOhm @ 3.7A, 4.5V
Power Dissipation (Max): 700mW (Ta)
Vgs(th) (Max) @ Id: 1.4V @ 250µA
Supplier Device Package: 6-TSOP
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
Vgs (Max): ±12V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 11 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 819 pF @ 10 V
Description: MOSFET P-CH 20V 2.7A 6TSOP
Packaging: Tape & Reel (TR)
Package / Case: SOT-23-6 Thin, TSOT-23-6
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 2.7A (Ta)
Rds On (Max) @ Id, Vgs: 60mOhm @ 3.7A, 4.5V
Power Dissipation (Max): 700mW (Ta)
Vgs(th) (Max) @ Id: 1.4V @ 250µA
Supplier Device Package: 6-TSOP
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
Vgs (Max): ±12V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 11 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 819 pF @ 10 V
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| NTGS3443T2G |
|
Hersteller: onsemi
Description: MOSFET P-CH 20V 2.2A 6TSOP
Packaging: Tape & Reel (TR)
Package / Case: SOT-23-6 Thin, TSOT-23-6
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 2.2A (Ta)
Rds On (Max) @ Id, Vgs: 65mOhm @ 4.4A, 4.5V
Power Dissipation (Max): 500mW (Ta)
Vgs(th) (Max) @ Id: 1.5V @ 250µA
Supplier Device Package: 6-TSOP
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
Vgs (Max): ±12V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 15 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 565 pF @ 5 V
Description: MOSFET P-CH 20V 2.2A 6TSOP
Packaging: Tape & Reel (TR)
Package / Case: SOT-23-6 Thin, TSOT-23-6
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 2.2A (Ta)
Rds On (Max) @ Id, Vgs: 65mOhm @ 4.4A, 4.5V
Power Dissipation (Max): 500mW (Ta)
Vgs(th) (Max) @ Id: 1.5V @ 250µA
Supplier Device Package: 6-TSOP
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
Vgs (Max): ±12V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 15 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 565 pF @ 5 V
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| NTGS3447PT1G |
|
Hersteller: onsemi
Description: MOSFET P-CH 12V 3.4A 6TSOP
Packaging: Tape & Reel (TR)
Package / Case: SOT-23-6 Thin, TSOT-23-6
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 3.4A (Ta)
Rds On (Max) @ Id, Vgs: 40mOhm @ 4.7A, 4.5V
Power Dissipation (Max): 700mW (Ta)
Vgs(th) (Max) @ Id: 1V @ 250µA
Supplier Device Package: 6-TSOP
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
Vgs (Max): ±8V
Drain to Source Voltage (Vdss): 12 V
Gate Charge (Qg) (Max) @ Vgs: 15 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 1053 pF @ 6 V
Description: MOSFET P-CH 12V 3.4A 6TSOP
Packaging: Tape & Reel (TR)
Package / Case: SOT-23-6 Thin, TSOT-23-6
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 3.4A (Ta)
Rds On (Max) @ Id, Vgs: 40mOhm @ 4.7A, 4.5V
Power Dissipation (Max): 700mW (Ta)
Vgs(th) (Max) @ Id: 1V @ 250µA
Supplier Device Package: 6-TSOP
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
Vgs (Max): ±8V
Drain to Source Voltage (Vdss): 12 V
Gate Charge (Qg) (Max) @ Vgs: 15 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 1053 pF @ 6 V
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| NTGS4111PT2G |
|
Hersteller: onsemi
Description: MOSFET P-CH 30V 2.6A 6TSOP
Packaging: Tape & Reel (TR)
Package / Case: SOT-23-6 Thin, TSOT-23-6
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 2.6A (Ta)
Rds On (Max) @ Id, Vgs: 60mOhm @ 3.7A, 10V
Power Dissipation (Max): 630mW (Ta)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: 6-TSOP
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 32 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 750 pF @ 15 V
Description: MOSFET P-CH 30V 2.6A 6TSOP
Packaging: Tape & Reel (TR)
Package / Case: SOT-23-6 Thin, TSOT-23-6
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 2.6A (Ta)
Rds On (Max) @ Id, Vgs: 60mOhm @ 3.7A, 10V
Power Dissipation (Max): 630mW (Ta)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: 6-TSOP
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 32 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 750 pF @ 15 V
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| NTHD3133PFT1G |
|
Hersteller: onsemi
Description: MOSFET P-CH 20V 3.2A CHIPFET
Packaging: Tape & Reel (TR)
Package / Case: 8-SMD, Flat Leads
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 3.2A (Tj)
Rds On (Max) @ Id, Vgs: 80mOhm @ 3.2A, 4.5V
FET Feature: Schottky Diode (Isolated)
Power Dissipation (Max): 1.1W (Ta)
Vgs(th) (Max) @ Id: 1.5V @ 250µA
Supplier Device Package: ChipFET™
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
Vgs (Max): ±8V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 7.4 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 680 pF @ 10 V
Description: MOSFET P-CH 20V 3.2A CHIPFET
Packaging: Tape & Reel (TR)
Package / Case: 8-SMD, Flat Leads
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 3.2A (Tj)
Rds On (Max) @ Id, Vgs: 80mOhm @ 3.2A, 4.5V
FET Feature: Schottky Diode (Isolated)
Power Dissipation (Max): 1.1W (Ta)
Vgs(th) (Max) @ Id: 1.5V @ 250µA
Supplier Device Package: ChipFET™
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
Vgs (Max): ±8V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 7.4 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 680 pF @ 10 V
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| NTHD3133PFT3G |
|
Hersteller: onsemi
Description: MOSFET P-CH 20V 3.2A CHIPFET
Packaging: Tape & Reel (TR)
Package / Case: 8-SMD, Flat Leads
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 3.2A (Tj)
Rds On (Max) @ Id, Vgs: 80mOhm @ 3.2A, 4.5V
FET Feature: Schottky Diode (Isolated)
Power Dissipation (Max): 1.1W (Ta)
Vgs(th) (Max) @ Id: 1.5V @ 250µA
Supplier Device Package: ChipFET™
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
Vgs (Max): ±8V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 7.4 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 680 pF @ 10 V
Description: MOSFET P-CH 20V 3.2A CHIPFET
Packaging: Tape & Reel (TR)
Package / Case: 8-SMD, Flat Leads
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 3.2A (Tj)
Rds On (Max) @ Id, Vgs: 80mOhm @ 3.2A, 4.5V
FET Feature: Schottky Diode (Isolated)
Power Dissipation (Max): 1.1W (Ta)
Vgs(th) (Max) @ Id: 1.5V @ 250µA
Supplier Device Package: ChipFET™
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
Vgs (Max): ±8V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 7.4 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 680 pF @ 10 V
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| NTHD4102PT3G |
|
Hersteller: onsemi
Description: MOSFET 2P-CH 20V 2.9A CHIPFET
Packaging: Tape & Reel (TR)
Package / Case: 8-SMD, Flat Leads
Mounting Type: Surface Mount
Configuration: 2 P-Channel (Dual)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 1.1W
Drain to Source Voltage (Vdss): 20V
Current - Continuous Drain (Id) @ 25°C: 2.9A
Input Capacitance (Ciss) (Max) @ Vds: 750pF @ 16V
Rds On (Max) @ Id, Vgs: 80mOhm @ 2.9A, 4.5V
Gate Charge (Qg) (Max) @ Vgs: 8.6nC @ 4.5V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 1.5V @ 250µA
Supplier Device Package: ChipFET™
Description: MOSFET 2P-CH 20V 2.9A CHIPFET
Packaging: Tape & Reel (TR)
Package / Case: 8-SMD, Flat Leads
Mounting Type: Surface Mount
Configuration: 2 P-Channel (Dual)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 1.1W
Drain to Source Voltage (Vdss): 20V
Current - Continuous Drain (Id) @ 25°C: 2.9A
Input Capacitance (Ciss) (Max) @ Vds: 750pF @ 16V
Rds On (Max) @ Id, Vgs: 80mOhm @ 2.9A, 4.5V
Gate Charge (Qg) (Max) @ Vgs: 8.6nC @ 4.5V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 1.5V @ 250µA
Supplier Device Package: ChipFET™
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| NTHS4166NT1G |
|
Hersteller: onsemi
Description: MOSFET N-CH 30V 4.9A CHIPFET
Packaging: Tape & Reel (TR)
Package / Case: 8-SMD, Flat Leads
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 4.9A (Ta)
Rds On (Max) @ Id, Vgs: 22mOhm @ 4.9A, 10V
Power Dissipation (Max): 800mW (Ta)
Vgs(th) (Max) @ Id: 2.3V @ 250µA
Supplier Device Package: ChipFET™
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 18 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 900 pF @ 15 V
Description: MOSFET N-CH 30V 4.9A CHIPFET
Packaging: Tape & Reel (TR)
Package / Case: 8-SMD, Flat Leads
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 4.9A (Ta)
Rds On (Max) @ Id, Vgs: 22mOhm @ 4.9A, 10V
Power Dissipation (Max): 800mW (Ta)
Vgs(th) (Max) @ Id: 2.3V @ 250µA
Supplier Device Package: ChipFET™
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 18 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 900 pF @ 15 V
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| NTJD4158CT2G |
|
Hersteller: onsemi
Description: MOSFET N/P-CH 30V/20V 0.25A SC88
Packaging: Tape & Reel (TR)
Package / Case: 6-TSSOP, SC-88, SOT-363
Mounting Type: Surface Mount
Configuration: N and P-Channel
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 270mW
Drain to Source Voltage (Vdss): 30V, 20V
Current - Continuous Drain (Id) @ 25°C: 250mA, 880mA
Input Capacitance (Ciss) (Max) @ Vds: 33pF @ 5V
Rds On (Max) @ Id, Vgs: 1.5Ohm @ 10mA, 4.5V
Gate Charge (Qg) (Max) @ Vgs: 1.5nC @ 5V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 1.5V @ 100µA
Supplier Device Package: SC-88/SC70-6/SOT-363
Description: MOSFET N/P-CH 30V/20V 0.25A SC88
Packaging: Tape & Reel (TR)
Package / Case: 6-TSSOP, SC-88, SOT-363
Mounting Type: Surface Mount
Configuration: N and P-Channel
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 270mW
Drain to Source Voltage (Vdss): 30V, 20V
Current - Continuous Drain (Id) @ 25°C: 250mA, 880mA
Input Capacitance (Ciss) (Max) @ Vds: 33pF @ 5V
Rds On (Max) @ Id, Vgs: 1.5Ohm @ 10mA, 4.5V
Gate Charge (Qg) (Max) @ Vgs: 1.5nC @ 5V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 1.5V @ 100µA
Supplier Device Package: SC-88/SC70-6/SOT-363
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| NTJS4160NT1G |
|
Hersteller: onsemi
Description: MOSFET N-CH 30V 1.8A SC88/SC70-6
Packaging: Tape & Reel (TR)
Package / Case: 6-TSSOP, SC-88, SOT-363
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 1.8A (Ta)
Rds On (Max) @ Id, Vgs: 60mOhm @ 2.6A, 10V
Power Dissipation (Max): 300mW (Ta)
Vgs(th) (Max) @ Id: 2.4V @ 250µA
Supplier Device Package: SC-88/SC70-6/SOT-363
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 2.75 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 230 pF @ 10 V
Description: MOSFET N-CH 30V 1.8A SC88/SC70-6
Packaging: Tape & Reel (TR)
Package / Case: 6-TSSOP, SC-88, SOT-363
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 1.8A (Ta)
Rds On (Max) @ Id, Vgs: 60mOhm @ 2.6A, 10V
Power Dissipation (Max): 300mW (Ta)
Vgs(th) (Max) @ Id: 2.4V @ 250µA
Supplier Device Package: SC-88/SC70-6/SOT-363
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 2.75 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 230 pF @ 10 V
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| NTK3139PT1G |
|
Hersteller: onsemi
Description: MOSFET P-CH 20V 660MA SOT723
Packaging: Tape & Reel (TR)
Package / Case: SOT-723
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 660mA (Ta)
Rds On (Max) @ Id, Vgs: 480mOhm @ 780mA, 4.5V
Power Dissipation (Max): 310mW (Ta)
Vgs(th) (Max) @ Id: 1.2V @ 250µA
Supplier Device Package: SOT-723
Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4.5V
Vgs (Max): ±6V
Drain to Source Voltage (Vdss): 20 V
Input Capacitance (Ciss) (Max) @ Vds: 170 pF @ 16 V
Description: MOSFET P-CH 20V 660MA SOT723
Packaging: Tape & Reel (TR)
Package / Case: SOT-723
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 660mA (Ta)
Rds On (Max) @ Id, Vgs: 480mOhm @ 780mA, 4.5V
Power Dissipation (Max): 310mW (Ta)
Vgs(th) (Max) @ Id: 1.2V @ 250µA
Supplier Device Package: SOT-723
Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4.5V
Vgs (Max): ±6V
Drain to Source Voltage (Vdss): 20 V
Input Capacitance (Ciss) (Max) @ Vds: 170 pF @ 16 V
auf Bestellung 28000 Stücke:
Lieferzeit 10-14 Tag (e)| Anzahl | Preis |
|---|---|
| 4000+ | 0.16 EUR |
| 8000+ | 0.14 EUR |
| 20000+ | 0.13 EUR |
| NTK3139PT5G |
|
Hersteller: onsemi
Description: MOSFET P-CH 20V 660MA SOT723
Packaging: Tape & Reel (TR)
Package / Case: SOT-723
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 660mA (Ta)
Rds On (Max) @ Id, Vgs: 480mOhm @ 780mA, 4.5V
Power Dissipation (Max): 310mW (Ta)
Vgs(th) (Max) @ Id: 1.2V @ 250µA
Supplier Device Package: SOT-723
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4.5V
Vgs (Max): ±6V
Drain to Source Voltage (Vdss): 20 V
Input Capacitance (Ciss) (Max) @ Vds: 170 pF @ 16 V
Description: MOSFET P-CH 20V 660MA SOT723
Packaging: Tape & Reel (TR)
Package / Case: SOT-723
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 660mA (Ta)
Rds On (Max) @ Id, Vgs: 480mOhm @ 780mA, 4.5V
Power Dissipation (Max): 310mW (Ta)
Vgs(th) (Max) @ Id: 1.2V @ 250µA
Supplier Device Package: SOT-723
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4.5V
Vgs (Max): ±6V
Drain to Source Voltage (Vdss): 20 V
Input Capacitance (Ciss) (Max) @ Vds: 170 pF @ 16 V
auf Bestellung 14100 Stücke:
Lieferzeit 10-14 Tag (e)| Anzahl | Preis |
|---|---|
| 8000+ | 0.13 EUR |
| NTLJD3115PTAG |
|
Hersteller: onsemi
Description: MOSFET 2P-CH 20V 2.3A 6WDFN
Packaging: Tape & Reel (TR)
Package / Case: 6-WDFN Exposed Pad
Mounting Type: Surface Mount
Configuration: 2 P-Channel (Dual)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 710mW
Drain to Source Voltage (Vdss): 20V
Current - Continuous Drain (Id) @ 25°C: 2.3A
Input Capacitance (Ciss) (Max) @ Vds: 531pF @ 10V
Rds On (Max) @ Id, Vgs: 100mOhm @ 2A, 4.5V
Gate Charge (Qg) (Max) @ Vgs: 6.2nC @ 4.5V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 1V @ 250µA
Supplier Device Package: 6-WDFN (2x2)
Description: MOSFET 2P-CH 20V 2.3A 6WDFN
Packaging: Tape & Reel (TR)
Package / Case: 6-WDFN Exposed Pad
Mounting Type: Surface Mount
Configuration: 2 P-Channel (Dual)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 710mW
Drain to Source Voltage (Vdss): 20V
Current - Continuous Drain (Id) @ 25°C: 2.3A
Input Capacitance (Ciss) (Max) @ Vds: 531pF @ 10V
Rds On (Max) @ Id, Vgs: 100mOhm @ 2A, 4.5V
Gate Charge (Qg) (Max) @ Vgs: 6.2nC @ 4.5V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 1V @ 250µA
Supplier Device Package: 6-WDFN (2x2)
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| NTLJD3119CTAG |
|
Hersteller: onsemi
Description: MOSFET N/P-CH 20V 2.6A 6WDFN
Packaging: Tape & Reel (TR)
Package / Case: 6-WDFN Exposed Pad
Mounting Type: Surface Mount
Configuration: N and P-Channel
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 710mW
Drain to Source Voltage (Vdss): 20V
Current - Continuous Drain (Id) @ 25°C: 2.6A, 2.3A
Input Capacitance (Ciss) (Max) @ Vds: 271pF @ 10V
Rds On (Max) @ Id, Vgs: 65mOhm @ 3.8A, 4.5V
Gate Charge (Qg) (Max) @ Vgs: 3.7nC @ 4.5V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 1V @ 250µA
Supplier Device Package: 6-WDFN (2x2)
Description: MOSFET N/P-CH 20V 2.6A 6WDFN
Packaging: Tape & Reel (TR)
Package / Case: 6-WDFN Exposed Pad
Mounting Type: Surface Mount
Configuration: N and P-Channel
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 710mW
Drain to Source Voltage (Vdss): 20V
Current - Continuous Drain (Id) @ 25°C: 2.6A, 2.3A
Input Capacitance (Ciss) (Max) @ Vds: 271pF @ 10V
Rds On (Max) @ Id, Vgs: 65mOhm @ 3.8A, 4.5V
Gate Charge (Qg) (Max) @ Vgs: 3.7nC @ 4.5V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 1V @ 250µA
Supplier Device Package: 6-WDFN (2x2)
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| NTLJD3119CTBG |
|
Hersteller: onsemi
Description: MOSFET N/P-CH 20V 2.6A 6WDFN
Packaging: Tape & Reel (TR)
Package / Case: 6-WDFN Exposed Pad
Mounting Type: Surface Mount
Configuration: N and P-Channel
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 710mW
Drain to Source Voltage (Vdss): 20V
Current - Continuous Drain (Id) @ 25°C: 2.6A, 2.3A
Input Capacitance (Ciss) (Max) @ Vds: 271pF @ 10V
Rds On (Max) @ Id, Vgs: 65mOhm @ 3.8A, 4.5V
Gate Charge (Qg) (Max) @ Vgs: 3.7nC @ 4.5V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 1V @ 250µA
Supplier Device Package: 6-WDFN (2x2)
Part Status: Active
Description: MOSFET N/P-CH 20V 2.6A 6WDFN
Packaging: Tape & Reel (TR)
Package / Case: 6-WDFN Exposed Pad
Mounting Type: Surface Mount
Configuration: N and P-Channel
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 710mW
Drain to Source Voltage (Vdss): 20V
Current - Continuous Drain (Id) @ 25°C: 2.6A, 2.3A
Input Capacitance (Ciss) (Max) @ Vds: 271pF @ 10V
Rds On (Max) @ Id, Vgs: 65mOhm @ 3.8A, 4.5V
Gate Charge (Qg) (Max) @ Vgs: 3.7nC @ 4.5V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 1V @ 250µA
Supplier Device Package: 6-WDFN (2x2)
Part Status: Active
auf Bestellung 24000 Stücke:
Lieferzeit 10-14 Tag (e)| Anzahl | Preis |
|---|---|
| 3000+ | 0.53 EUR |
| 6000+ | 0.49 EUR |
| 9000+ | 0.47 EUR |
| 15000+ | 0.46 EUR |
| NTLJF3117PT1G |
|
Hersteller: onsemi
Description: MOSFET P-CH 20V 2.3A 6WDFN
Packaging: Tape & Reel (TR)
Package / Case: 6-WDFN Exposed Pad
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 2.3A (Ta)
Rds On (Max) @ Id, Vgs: 100mOhm @ 2A, 4.5V
FET Feature: Schottky Diode (Isolated)
Power Dissipation (Max): 710mW (Ta)
Vgs(th) (Max) @ Id: 1V @ 250µA
Supplier Device Package: 6-WDFN (2x2)
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
Vgs (Max): ±8V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 6.2 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 531 pF @ 10 V
Description: MOSFET P-CH 20V 2.3A 6WDFN
Packaging: Tape & Reel (TR)
Package / Case: 6-WDFN Exposed Pad
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 2.3A (Ta)
Rds On (Max) @ Id, Vgs: 100mOhm @ 2A, 4.5V
FET Feature: Schottky Diode (Isolated)
Power Dissipation (Max): 710mW (Ta)
Vgs(th) (Max) @ Id: 1V @ 250µA
Supplier Device Package: 6-WDFN (2x2)
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
Vgs (Max): ±8V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 6.2 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 531 pF @ 10 V
auf Bestellung 3000 Stücke:
Lieferzeit 10-14 Tag (e)| Anzahl | Preis |
|---|---|
| 3000+ | 0.28 EUR |
| NTLJF3117PTAG |
|
Hersteller: onsemi
Description: MOSFET P-CH 20V 2.3A 6WDFN
Description: MOSFET P-CH 20V 2.3A 6WDFN
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| NTLJF3118NTAG |
|
Hersteller: onsemi
Description: MOSFET N-CH 20V 2.6A 6WDFN
Packaging: Tape & Reel (TR)
Package / Case: 6-WDFN Exposed Pad
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 2.6A (Ta)
Rds On (Max) @ Id, Vgs: 65mOhm @ 3.8A, 4.5V
FET Feature: Schottky Diode (Isolated)
Power Dissipation (Max): 700mW (Ta)
Vgs(th) (Max) @ Id: 1V @ 250µA
Supplier Device Package: 6-WDFN (2x2)
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
Vgs (Max): ±12V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 3.7 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 271 pF @ 10 V
Description: MOSFET N-CH 20V 2.6A 6WDFN
Packaging: Tape & Reel (TR)
Package / Case: 6-WDFN Exposed Pad
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 2.6A (Ta)
Rds On (Max) @ Id, Vgs: 65mOhm @ 3.8A, 4.5V
FET Feature: Schottky Diode (Isolated)
Power Dissipation (Max): 700mW (Ta)
Vgs(th) (Max) @ Id: 1V @ 250µA
Supplier Device Package: 6-WDFN (2x2)
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
Vgs (Max): ±12V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 3.7 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 271 pF @ 10 V
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| NTLJF3118NTBG |
|
Hersteller: onsemi
Description: MOSFET N-CH 20V 2.6A 6WDFN
Description: MOSFET N-CH 20V 2.6A 6WDFN
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| NTLJS2103PTAG |
|
Hersteller: onsemi
Description: MOSFET P-CH 12V 3.5A 6WDFN
Packaging: Tape & Reel (TR)
Package / Case: 6-WDFN Exposed Pad
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 3.5A (Ta)
Rds On (Max) @ Id, Vgs: 40mOhm @ 3A, 4.5V
Power Dissipation (Max): 700mW (Ta)
Vgs(th) (Max) @ Id: 800mV @ 250µA
Supplier Device Package: 6-WDFN (2x2)
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 1.2V, 4.5V
Vgs (Max): ±8V
Drain to Source Voltage (Vdss): 12 V
Gate Charge (Qg) (Max) @ Vgs: 15 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 1157 pF @ 6 V
Description: MOSFET P-CH 12V 3.5A 6WDFN
Packaging: Tape & Reel (TR)
Package / Case: 6-WDFN Exposed Pad
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 3.5A (Ta)
Rds On (Max) @ Id, Vgs: 40mOhm @ 3A, 4.5V
Power Dissipation (Max): 700mW (Ta)
Vgs(th) (Max) @ Id: 800mV @ 250µA
Supplier Device Package: 6-WDFN (2x2)
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 1.2V, 4.5V
Vgs (Max): ±8V
Drain to Source Voltage (Vdss): 12 V
Gate Charge (Qg) (Max) @ Vgs: 15 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 1157 pF @ 6 V
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| NTLJS2103PTBG |
|
Hersteller: onsemi
Description: MOSFET P-CH 12V 3.5A 6WDFN
Packaging: Tape & Reel (TR)
Package / Case: 6-WDFN Exposed Pad
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 3.5A (Ta)
Rds On (Max) @ Id, Vgs: 40mOhm @ 3A, 4.5V
Power Dissipation (Max): 700mW (Ta)
Vgs(th) (Max) @ Id: 800mV @ 250µA
Supplier Device Package: 6-WDFN (2x2)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 1.2V, 4.5V
Vgs (Max): ±8V
Drain to Source Voltage (Vdss): 12 V
Gate Charge (Qg) (Max) @ Vgs: 15 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 1157 pF @ 6 V
Description: MOSFET P-CH 12V 3.5A 6WDFN
Packaging: Tape & Reel (TR)
Package / Case: 6-WDFN Exposed Pad
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 3.5A (Ta)
Rds On (Max) @ Id, Vgs: 40mOhm @ 3A, 4.5V
Power Dissipation (Max): 700mW (Ta)
Vgs(th) (Max) @ Id: 800mV @ 250µA
Supplier Device Package: 6-WDFN (2x2)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 1.2V, 4.5V
Vgs (Max): ±8V
Drain to Source Voltage (Vdss): 12 V
Gate Charge (Qg) (Max) @ Vgs: 15 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 1157 pF @ 6 V
auf Bestellung 21000 Stücke:
Lieferzeit 10-14 Tag (e)| Anzahl | Preis |
|---|---|
| 3000+ | 0.35 EUR |
| 6000+ | 0.34 EUR |
| 15000+ | 0.32 EUR |
| NTLJS4114NT1G |
|
Hersteller: onsemi
Description: MOSFET N-CH 30V 3.6A 6WDFN
Packaging: Tape & Reel (TR)
Package / Case: 6-WDFN Exposed Pad
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 3.6A (Ta)
Rds On (Max) @ Id, Vgs: 35mOhm @ 2A, 4.5V
Power Dissipation (Max): 700mW (Ta)
Vgs(th) (Max) @ Id: 1V @ 250µA
Supplier Device Package: 6-WDFN (2x2)
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
Vgs (Max): ±12V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 13 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 650 pF @ 15 V
Description: MOSFET N-CH 30V 3.6A 6WDFN
Packaging: Tape & Reel (TR)
Package / Case: 6-WDFN Exposed Pad
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 3.6A (Ta)
Rds On (Max) @ Id, Vgs: 35mOhm @ 2A, 4.5V
Power Dissipation (Max): 700mW (Ta)
Vgs(th) (Max) @ Id: 1V @ 250µA
Supplier Device Package: 6-WDFN (2x2)
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
Vgs (Max): ±12V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 13 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 650 pF @ 15 V
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| NTMD4840NR2G |
|
Hersteller: onsemi
Description: MOSFET 2N-CH 30V 4.5A 8SOIC
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 680mW
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 4.5A
Input Capacitance (Ciss) (Max) @ Vds: 520pF @ 15V
Rds On (Max) @ Id, Vgs: 24mOhm @ 6.9A, 10V
Gate Charge (Qg) (Max) @ Vgs: 9.5nC @ 10V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: 8-SOIC
Description: MOSFET 2N-CH 30V 4.5A 8SOIC
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 680mW
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 4.5A
Input Capacitance (Ciss) (Max) @ Vds: 520pF @ 15V
Rds On (Max) @ Id, Vgs: 24mOhm @ 6.9A, 10V
Gate Charge (Qg) (Max) @ Vgs: 9.5nC @ 10V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: 8-SOIC
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| NTMFS4744NT1G |
|
Hersteller: onsemi
Description: MOSFET N-CH 30V 7A 5DFN
Description: MOSFET N-CH 30V 7A 5DFN
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| NTMFS4744NT3G |
|
Hersteller: onsemi
Description: MOSFET N-CH 30V 7A 5DFN
Description: MOSFET N-CH 30V 7A 5DFN
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| NTMFS4833NT1G |
|
Hersteller: onsemi
Description: MOSFET N-CH 30V 16A/156A 5DFN
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN, 5 Leads
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 16A (Ta), 156A (Tc)
Rds On (Max) @ Id, Vgs: 2mOhm @ 30A, 10V
Power Dissipation (Max): 910mW (Ta), 125W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: 5-DFN (5x6) (8-SOFL)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 88 nC @ 11.5 V
Input Capacitance (Ciss) (Max) @ Vds: 5600 pF @ 12 V
Description: MOSFET N-CH 30V 16A/156A 5DFN
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN, 5 Leads
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 16A (Ta), 156A (Tc)
Rds On (Max) @ Id, Vgs: 2mOhm @ 30A, 10V
Power Dissipation (Max): 910mW (Ta), 125W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: 5-DFN (5x6) (8-SOFL)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 88 nC @ 11.5 V
Input Capacitance (Ciss) (Max) @ Vds: 5600 pF @ 12 V
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| NTMFS4833NT3G |
|
Hersteller: onsemi
Description: MOSFET N-CH 30V 16A/156A 5DFN
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN, 5 Leads
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 16A (Ta), 156A (Tc)
Rds On (Max) @ Id, Vgs: 2mOhm @ 30A, 10V
Power Dissipation (Max): 910mW (Ta), 125W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: 5-DFN (5x6) (8-SOFL)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 88 nC @ 11.5 V
Input Capacitance (Ciss) (Max) @ Vds: 5600 pF @ 12 V
Description: MOSFET N-CH 30V 16A/156A 5DFN
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN, 5 Leads
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 16A (Ta), 156A (Tc)
Rds On (Max) @ Id, Vgs: 2mOhm @ 30A, 10V
Power Dissipation (Max): 910mW (Ta), 125W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: 5-DFN (5x6) (8-SOFL)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 88 nC @ 11.5 V
Input Capacitance (Ciss) (Max) @ Vds: 5600 pF @ 12 V
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| NTMFS4834NT1G |
|
Hersteller: onsemi
Description: MOSFET N-CH 30V 13A/130A 5DFN
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN, 5 Leads
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 13A (Ta), 130A (Tc)
Rds On (Max) @ Id, Vgs: 3mOhm @ 30A, 10V
Power Dissipation (Max): 900mW (Ta), 86.2W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: 5-DFN (5x6) (8-SOFL)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 11.5V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 48 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 4500 pF @ 12 V
Description: MOSFET N-CH 30V 13A/130A 5DFN
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN, 5 Leads
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 13A (Ta), 130A (Tc)
Rds On (Max) @ Id, Vgs: 3mOhm @ 30A, 10V
Power Dissipation (Max): 900mW (Ta), 86.2W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: 5-DFN (5x6) (8-SOFL)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 11.5V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 48 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 4500 pF @ 12 V
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| NTMFS4835NT1G |
|
Hersteller: onsemi
Description: MOSFET N-CH 30V 13A/130A 5DFN
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN, 5 Leads
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 13A (Ta), 130A (Tc)
Rds On (Max) @ Id, Vgs: 3.5mOhm @ 30A, 10V
Power Dissipation (Max): 890mW (Ta), 62.5W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: 5-DFN (5x6) (8-SOFL)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 11.5V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 52 nC @ 11.5 V
Input Capacitance (Ciss) (Max) @ Vds: 3100 pF @ 12 V
Description: MOSFET N-CH 30V 13A/130A 5DFN
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN, 5 Leads
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 13A (Ta), 130A (Tc)
Rds On (Max) @ Id, Vgs: 3.5mOhm @ 30A, 10V
Power Dissipation (Max): 890mW (Ta), 62.5W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: 5-DFN (5x6) (8-SOFL)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 11.5V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 52 nC @ 11.5 V
Input Capacitance (Ciss) (Max) @ Vds: 3100 pF @ 12 V
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| NTMFS4836NT1G |
|
Hersteller: onsemi
Description: MOSFET N-CH 30V 11A/90A 5DFN
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN, 5 Leads
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 11A (Ta), 90A (Tc)
Rds On (Max) @ Id, Vgs: 4mOhm @ 30A, 10V
Power Dissipation (Max): 890mW (Ta), 55.6W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: 5-DFN (5x6) (8-SOFL)
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 11.5V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 28 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 2677 pF @ 12 V
Description: MOSFET N-CH 30V 11A/90A 5DFN
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN, 5 Leads
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 11A (Ta), 90A (Tc)
Rds On (Max) @ Id, Vgs: 4mOhm @ 30A, 10V
Power Dissipation (Max): 890mW (Ta), 55.6W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: 5-DFN (5x6) (8-SOFL)
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 11.5V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 28 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 2677 pF @ 12 V
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| NTMFS4836NT3G |
|
Hersteller: onsemi
Description: MOSFET N-CH 30V 11A/90A 5DFN
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN, 5 Leads
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 11A (Ta), 90A (Tc)
Rds On (Max) @ Id, Vgs: 4mOhm @ 30A, 10V
Power Dissipation (Max): 890mW (Ta), 55.6W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: 5-DFN (5x6) (8-SOFL)
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 11.5V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 28 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 2677 pF @ 12 V
Description: MOSFET N-CH 30V 11A/90A 5DFN
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN, 5 Leads
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 11A (Ta), 90A (Tc)
Rds On (Max) @ Id, Vgs: 4mOhm @ 30A, 10V
Power Dissipation (Max): 890mW (Ta), 55.6W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: 5-DFN (5x6) (8-SOFL)
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 11.5V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 28 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 2677 pF @ 12 V
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| NTMFS4837NHT1G |
|
Hersteller: onsemi
Description: MOSFET N-CH 30V 10.2A/75A 5DFN
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN, 5 Leads
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 10.2A (Ta), 75A (Tc)
Rds On (Max) @ Id, Vgs: 5mOhm @ 30A, 10V
Power Dissipation (Max): 880mW (Ta), 48W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: 5-DFN (5x6) (8-SOFL)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 11.5V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 23.8 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 3016 pF @ 12 V
Description: MOSFET N-CH 30V 10.2A/75A 5DFN
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN, 5 Leads
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 10.2A (Ta), 75A (Tc)
Rds On (Max) @ Id, Vgs: 5mOhm @ 30A, 10V
Power Dissipation (Max): 880mW (Ta), 48W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: 5-DFN (5x6) (8-SOFL)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 11.5V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 23.8 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 3016 pF @ 12 V
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| NTMFS4837NT1G |
|
Hersteller: onsemi
Description: MOSFET N-CH 30V 10A/74A 5DFN
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN, 5 Leads
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 10A (Ta), 74A (Tc)
Rds On (Max) @ Id, Vgs: 5mOhm @ 30A, 10V
Power Dissipation (Max): 880mW (Ta), 47.2W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: 5-DFN (5x6) (8-SOFL)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 11.5V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 22 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 2048 pF @ 12 V
Description: MOSFET N-CH 30V 10A/74A 5DFN
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN, 5 Leads
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 10A (Ta), 74A (Tc)
Rds On (Max) @ Id, Vgs: 5mOhm @ 30A, 10V
Power Dissipation (Max): 880mW (Ta), 47.2W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: 5-DFN (5x6) (8-SOFL)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 11.5V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 22 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 2048 pF @ 12 V
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| NTMFS4839NHT1G |
|
Hersteller: onsemi
Description: MOSFET N-CH 30V 9.5A/64A 5DFN
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN, 5 Leads
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 9.5A (Ta), 64A (Tc)
Rds On (Max) @ Id, Vgs: 5.5mOhm @ 30A, 10V
Power Dissipation (Max): 870mW (Ta), 42.4W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: 5-DFN (5x6) (8-SOFL)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 11.5V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 43.5 nC @ 11.5 V
Input Capacitance (Ciss) (Max) @ Vds: 2354 pF @ 12 V
Description: MOSFET N-CH 30V 9.5A/64A 5DFN
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN, 5 Leads
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 9.5A (Ta), 64A (Tc)
Rds On (Max) @ Id, Vgs: 5.5mOhm @ 30A, 10V
Power Dissipation (Max): 870mW (Ta), 42.4W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: 5-DFN (5x6) (8-SOFL)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 11.5V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 43.5 nC @ 11.5 V
Input Capacitance (Ciss) (Max) @ Vds: 2354 pF @ 12 V
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| NTMS4816NR2G |
|
Hersteller: onsemi
Description: MOSFET N-CH 30V 6.8A 8SOIC
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 6.8A (Ta)
Rds On (Max) @ Id, Vgs: 10mOhm @ 9A, 10V
Power Dissipation (Max): 780mW (Ta)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: 8-SOIC
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 18.3 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1060 pF @ 25 V
Description: MOSFET N-CH 30V 6.8A 8SOIC
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 6.8A (Ta)
Rds On (Max) @ Id, Vgs: 10mOhm @ 9A, 10V
Power Dissipation (Max): 780mW (Ta)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: 8-SOIC
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 18.3 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1060 pF @ 25 V
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| NTR4003NT1G |
|
Hersteller: onsemi
Description: MOSFET N-CH 30V 500MA SOT23-3
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 500mA (Ta)
Rds On (Max) @ Id, Vgs: 1.5Ohm @ 10mA, 4V
Power Dissipation (Max): 690mW (Ta)
Vgs(th) (Max) @ Id: 1.4V @ 250µA
Supplier Device Package: SOT-23-3 (TO-236)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 1.15 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 21 pF @ 5 V
Description: MOSFET N-CH 30V 500MA SOT23-3
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 500mA (Ta)
Rds On (Max) @ Id, Vgs: 1.5Ohm @ 10mA, 4V
Power Dissipation (Max): 690mW (Ta)
Vgs(th) (Max) @ Id: 1.4V @ 250µA
Supplier Device Package: SOT-23-3 (TO-236)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 1.15 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 21 pF @ 5 V
auf Bestellung 207000 Stücke:
Lieferzeit 10-14 Tag (e)| Anzahl | Preis |
|---|---|
| 3000+ | 0.08 EUR |
| 6000+ | 0.08 EUR |
| 9000+ | 0.06 EUR |
| 21000+ | 0.06 EUR |
| NTR4003NT3G |
|
Hersteller: onsemi
Description: MOSFET N-CH 30V 500MA SOT23-3
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 500mA (Ta)
Rds On (Max) @ Id, Vgs: 1.5Ohm @ 10mA, 4V
Power Dissipation (Max): 690mW (Ta)
Vgs(th) (Max) @ Id: 1.4V @ 250µA
Supplier Device Package: SOT-23-3 (TO-236)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 1.15 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 21 pF @ 5 V
Description: MOSFET N-CH 30V 500MA SOT23-3
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 500mA (Ta)
Rds On (Max) @ Id, Vgs: 1.5Ohm @ 10mA, 4V
Power Dissipation (Max): 690mW (Ta)
Vgs(th) (Max) @ Id: 1.4V @ 250µA
Supplier Device Package: SOT-23-3 (TO-236)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 1.15 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 21 pF @ 5 V
auf Bestellung 200000 Stücke:
Lieferzeit 10-14 Tag (e)| Anzahl | Preis |
|---|---|
| 10000+ | 0.09 EUR |
| 20000+ | 0.08 EUR |
| 30000+ | 0.08 EUR |
| 50000+ | 0.07 EUR |
| 70000+ | 0.07 EUR |
| 100000+ | 0.07 EUR |
| NTUD3127CT5G |
|
Hersteller: onsemi
Description: MOSFET N/P-CH 20V 0.16A SOT963
Packaging: Tape & Reel (TR)
Package / Case: SOT-963
Mounting Type: Surface Mount
Configuration: N and P-Channel
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 125mW
Drain to Source Voltage (Vdss): 20V
Current - Continuous Drain (Id) @ 25°C: 160mA, 140mA
Input Capacitance (Ciss) (Max) @ Vds: 9pF @ 15V
Rds On (Max) @ Id, Vgs: 3Ohm @ 100mA, 4.5V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 1V @ 250µA
Supplier Device Package: SOT-963
Description: MOSFET N/P-CH 20V 0.16A SOT963
Packaging: Tape & Reel (TR)
Package / Case: SOT-963
Mounting Type: Surface Mount
Configuration: N and P-Channel
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 125mW
Drain to Source Voltage (Vdss): 20V
Current - Continuous Drain (Id) @ 25°C: 160mA, 140mA
Input Capacitance (Ciss) (Max) @ Vds: 9pF @ 15V
Rds On (Max) @ Id, Vgs: 3Ohm @ 100mA, 4.5V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 1V @ 250µA
Supplier Device Package: SOT-963
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| NTZD5110NT1G |
|
Hersteller: onsemi
Description: MOSFET 2N-CH 60V 0.294A SOT563
Packaging: Tape & Reel (TR)
Package / Case: SOT-563, SOT-666
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 250mW
Drain to Source Voltage (Vdss): 60V
Current - Continuous Drain (Id) @ 25°C: 294mA
Input Capacitance (Ciss) (Max) @ Vds: 24.5pF @ 20V
Rds On (Max) @ Id, Vgs: 1.6Ohm @ 500mA, 10V
Gate Charge (Qg) (Max) @ Vgs: 0.7nC @ 4.5V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: SOT-563
Description: MOSFET 2N-CH 60V 0.294A SOT563
Packaging: Tape & Reel (TR)
Package / Case: SOT-563, SOT-666
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 250mW
Drain to Source Voltage (Vdss): 60V
Current - Continuous Drain (Id) @ 25°C: 294mA
Input Capacitance (Ciss) (Max) @ Vds: 24.5pF @ 20V
Rds On (Max) @ Id, Vgs: 1.6Ohm @ 500mA, 10V
Gate Charge (Qg) (Max) @ Vgs: 0.7nC @ 4.5V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: SOT-563
auf Bestellung 16000 Stücke:
Lieferzeit 10-14 Tag (e)| Anzahl | Preis |
|---|---|
| 4000+ | 0.14 EUR |
| 8000+ | 0.13 EUR |
| 12000+ | 0.12 EUR |
| NTZD5110NT5G |
|
Hersteller: onsemi
Description: MOSFET 2N-CH 60V 0.294A SOT563
Packaging: Tape & Reel (TR)
Package / Case: SOT-563, SOT-666
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 250mW
Drain to Source Voltage (Vdss): 60V
Current - Continuous Drain (Id) @ 25°C: 294mA
Input Capacitance (Ciss) (Max) @ Vds: 24.5pF @ 20V
Rds On (Max) @ Id, Vgs: 1.6Ohm @ 500mA, 10V
Gate Charge (Qg) (Max) @ Vgs: 0.7nC @ 4.5V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: SOT-563
Description: MOSFET 2N-CH 60V 0.294A SOT563
Packaging: Tape & Reel (TR)
Package / Case: SOT-563, SOT-666
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 250mW
Drain to Source Voltage (Vdss): 60V
Current - Continuous Drain (Id) @ 25°C: 294mA
Input Capacitance (Ciss) (Max) @ Vds: 24.5pF @ 20V
Rds On (Max) @ Id, Vgs: 1.6Ohm @ 500mA, 10V
Gate Charge (Qg) (Max) @ Vgs: 0.7nC @ 4.5V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: SOT-563
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| NUF2450MUT2G |
|
Hersteller: onsemi
Description: FILTER LC(PI) 2.3NH/240PF SMD
Packaging: Tape & Reel (TR)
Package / Case: 8-UFDFN Exposed Pad
Size / Dimension: 0.071" L x 0.047" W (1.80mm x 1.20mm)
Mounting Type: Surface Mount
Type: Low Pass
Operating Temperature: -40°C ~ 85°C
Values: L = 2.3nH, C = 240pF
Height: 0.022" (0.55mm)
Attenuation Value: -30dB @ 800MHz ~ 5GHz
Filter Order: 3rd
Applications: Audio
Technology: LC (Pi)
Center / Cutoff Frequency: 20MHz (Cutoff)
Resistance - Channel (Ohms): 1.3
ESD Protection: Yes
Number of Channels: 2
Description: FILTER LC(PI) 2.3NH/240PF SMD
Packaging: Tape & Reel (TR)
Package / Case: 8-UFDFN Exposed Pad
Size / Dimension: 0.071" L x 0.047" W (1.80mm x 1.20mm)
Mounting Type: Surface Mount
Type: Low Pass
Operating Temperature: -40°C ~ 85°C
Values: L = 2.3nH, C = 240pF
Height: 0.022" (0.55mm)
Attenuation Value: -30dB @ 800MHz ~ 5GHz
Filter Order: 3rd
Applications: Audio
Technology: LC (Pi)
Center / Cutoff Frequency: 20MHz (Cutoff)
Resistance - Channel (Ohms): 1.3
ESD Protection: Yes
Number of Channels: 2
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| NUF3102MUTAG |
|
Hersteller: onsemi
Description: FILTER RC(PI) 150MHZ ESD SMD
Packaging: Tape & Reel (TR)
Package / Case: 8-UFDFN Exposed Pad
Size / Dimension: 0.071" L x 0.047" W (1.80mm x 1.20mm)
Mounting Type: Surface Mount
Type: Low Pass
Operating Temperature: -40°C ~ 85°C
Values: R = 47Ohm, 100Ohm, C = 13pF
Height: 0.022" (0.55mm)
Attenuation Value: -25dB @ 800MHz ~ 5GHz
Filter Order: 2nd
Applications: Data Lines for Mobile Devices
Technology: RC (Pi)
Center / Cutoff Frequency: 150MHz (Cutoff)
Resistance - Channel (Ohms): 47, 100
ESD Protection: Yes
Part Status: Active
Number of Channels: 3
Description: FILTER RC(PI) 150MHZ ESD SMD
Packaging: Tape & Reel (TR)
Package / Case: 8-UFDFN Exposed Pad
Size / Dimension: 0.071" L x 0.047" W (1.80mm x 1.20mm)
Mounting Type: Surface Mount
Type: Low Pass
Operating Temperature: -40°C ~ 85°C
Values: R = 47Ohm, 100Ohm, C = 13pF
Height: 0.022" (0.55mm)
Attenuation Value: -25dB @ 800MHz ~ 5GHz
Filter Order: 2nd
Applications: Data Lines for Mobile Devices
Technology: RC (Pi)
Center / Cutoff Frequency: 150MHz (Cutoff)
Resistance - Channel (Ohms): 47, 100
ESD Protection: Yes
Part Status: Active
Number of Channels: 3
auf Bestellung 45000 Stücke:
Lieferzeit 10-14 Tag (e)| Anzahl | Preis |
|---|---|
| 3000+ | 0.61 EUR |
| NUF4001MUT2G |
|
Hersteller: onsemi
Description: FILTER RC(PI) 100 OHMS ESD SMD
Packaging: Tape & Reel (TR)
Package / Case: 8-UFDFN Exposed Pad
Size / Dimension: 0.071" L x 0.047" W (1.80mm x 1.20mm)
Mounting Type: Surface Mount
Type: Low Pass
Operating Temperature: -40°C ~ 85°C
Values: R = 100Ohms, C = 13pF
Height: 0.022" (0.55mm)
Attenuation Value: -25dB @ 800MHz ~ 5GHz
Filter Order: 2nd
Applications: Data Lines for Mobile Devices
Technology: RC (Pi)
Center / Cutoff Frequency: 150MHz (Cutoff)
Resistance - Channel (Ohms): 100
ESD Protection: Yes
Part Status: Active
Number of Channels: 4
Description: FILTER RC(PI) 100 OHMS ESD SMD
Packaging: Tape & Reel (TR)
Package / Case: 8-UFDFN Exposed Pad
Size / Dimension: 0.071" L x 0.047" W (1.80mm x 1.20mm)
Mounting Type: Surface Mount
Type: Low Pass
Operating Temperature: -40°C ~ 85°C
Values: R = 100Ohms, C = 13pF
Height: 0.022" (0.55mm)
Attenuation Value: -25dB @ 800MHz ~ 5GHz
Filter Order: 2nd
Applications: Data Lines for Mobile Devices
Technology: RC (Pi)
Center / Cutoff Frequency: 150MHz (Cutoff)
Resistance - Channel (Ohms): 100
ESD Protection: Yes
Part Status: Active
Number of Channels: 4
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| NUF4211MNT1G |
|
Hersteller: onsemi
Description: FILTER RC(PI) 100 OHM/8.5PF SMD
Packaging: Tape & Reel (TR)
Package / Case: 8-VFDFN Exposed Pad
Size / Dimension: 0.079" L x 0.079" W (2.00mm x 2.00mm)
Mounting Type: Surface Mount
Type: Low Pass
Operating Temperature: -40°C ~ 85°C
Values: R = 100Ohms, C = 8.5pF
Height: 0.039" (1.00mm)
Attenuation Value: -20dB @ 800MHz ~ 3GHz
Filter Order: 2nd
Applications: Data Lines for Mobile Devices
Technology: RC (Pi)
Center / Cutoff Frequency: 250MHz (Cutoff)
Resistance - Channel (Ohms): 100
ESD Protection: Yes
Number of Channels: 4
Description: FILTER RC(PI) 100 OHM/8.5PF SMD
Packaging: Tape & Reel (TR)
Package / Case: 8-VFDFN Exposed Pad
Size / Dimension: 0.079" L x 0.079" W (2.00mm x 2.00mm)
Mounting Type: Surface Mount
Type: Low Pass
Operating Temperature: -40°C ~ 85°C
Values: R = 100Ohms, C = 8.5pF
Height: 0.039" (1.00mm)
Attenuation Value: -20dB @ 800MHz ~ 3GHz
Filter Order: 2nd
Applications: Data Lines for Mobile Devices
Technology: RC (Pi)
Center / Cutoff Frequency: 250MHz (Cutoff)
Resistance - Channel (Ohms): 100
ESD Protection: Yes
Number of Channels: 4
auf Bestellung 3000 Stücke:
Lieferzeit 10-14 Tag (e)| Anzahl | Preis |
|---|---|
| 3000+ | 0.50 EUR |
| NUF6005MUT2G |
|
Hersteller: onsemi
Description: FILTER RC(PI) 100 OHMS ESD SMD
Packaging: Tape & Reel (TR)
Package / Case: 12-UFDFN Exposed Pad
Size / Dimension: 0.098" L x 0.047" W (2.50mm x 1.20mm)
Mounting Type: Surface Mount
Type: Low Pass
Operating Temperature: -40°C ~ 85°C
Values: R = 100Ohms, C = 10pF
Height: 0.022" (0.55mm)
Attenuation Value: -25dB @ 800MHz ~ 3GHz
Filter Order: 2nd
Applications: Data Lines for Mobile Devices
Technology: RC (Pi)
Center / Cutoff Frequency: 185MHz (Cutoff)
Resistance - Channel (Ohms): 100
ESD Protection: Yes
Number of Channels: 6
Description: FILTER RC(PI) 100 OHMS ESD SMD
Packaging: Tape & Reel (TR)
Package / Case: 12-UFDFN Exposed Pad
Size / Dimension: 0.098" L x 0.047" W (2.50mm x 1.20mm)
Mounting Type: Surface Mount
Type: Low Pass
Operating Temperature: -40°C ~ 85°C
Values: R = 100Ohms, C = 10pF
Height: 0.022" (0.55mm)
Attenuation Value: -25dB @ 800MHz ~ 3GHz
Filter Order: 2nd
Applications: Data Lines for Mobile Devices
Technology: RC (Pi)
Center / Cutoff Frequency: 185MHz (Cutoff)
Resistance - Channel (Ohms): 100
ESD Protection: Yes
Number of Channels: 6
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| NUF6010MUT2G |
|
Hersteller: onsemi
Description: FILTER RC(PI) 100 OHM/7PF SMD
Packaging: Tape & Reel (TR)
Package / Case: 12-UFDFN Exposed Pad
Size / Dimension: 0.098" L x 0.047" W (2.50mm x 1.20mm)
Mounting Type: Surface Mount
Type: Low Pass
Operating Temperature: -40°C ~ 85°C
Values: R = 100Ohms, C = 7pF
Height: 0.022" (0.55mm)
Attenuation Value: -20dB @ 800MHz ~ 3GHz
Filter Order: 2nd
Applications: Data Lines for Mobile Devices
Technology: RC (Pi)
Center / Cutoff Frequency: 250MHz (Cutoff)
Resistance - Channel (Ohms): 100
ESD Protection: Yes
Part Status: Active
Number of Channels: 6
Description: FILTER RC(PI) 100 OHM/7PF SMD
Packaging: Tape & Reel (TR)
Package / Case: 12-UFDFN Exposed Pad
Size / Dimension: 0.098" L x 0.047" W (2.50mm x 1.20mm)
Mounting Type: Surface Mount
Type: Low Pass
Operating Temperature: -40°C ~ 85°C
Values: R = 100Ohms, C = 7pF
Height: 0.022" (0.55mm)
Attenuation Value: -20dB @ 800MHz ~ 3GHz
Filter Order: 2nd
Applications: Data Lines for Mobile Devices
Technology: RC (Pi)
Center / Cutoff Frequency: 250MHz (Cutoff)
Resistance - Channel (Ohms): 100
ESD Protection: Yes
Part Status: Active
Number of Channels: 6
auf Bestellung 3000 Stücke:
Lieferzeit 10-14 Tag (e)| Anzahl | Preis |
|---|---|
| 3000+ | 0.30 EUR |
| NUF6107MNTBG |
|
Hersteller: onsemi
Description: FILTER RC(PI) 100 OHM/30PF SMD
Packaging: Tape & Reel (TR)
Package / Case: 12-VFDFN Exposed Pad
Size / Dimension: 0.118" L x 0.053" W (3.00mm x 1.35mm)
Mounting Type: Surface Mount
Type: Low Pass
Operating Temperature: -40°C ~ 85°C
Values: R = 100Ohms, C = 30pF
Height: 0.039" (1.00mm)
Attenuation Value: -35dB @ 800MHz ~ 2.2GHz
Filter Order: 2nd
Applications: Data Lines for Mobile Devices
Technology: RC (Pi)
Resistance - Channel (Ohms): 100
ESD Protection: Yes
Number of Channels: 4
Description: FILTER RC(PI) 100 OHM/30PF SMD
Packaging: Tape & Reel (TR)
Package / Case: 12-VFDFN Exposed Pad
Size / Dimension: 0.118" L x 0.053" W (3.00mm x 1.35mm)
Mounting Type: Surface Mount
Type: Low Pass
Operating Temperature: -40°C ~ 85°C
Values: R = 100Ohms, C = 30pF
Height: 0.039" (1.00mm)
Attenuation Value: -35dB @ 800MHz ~ 2.2GHz
Filter Order: 2nd
Applications: Data Lines for Mobile Devices
Technology: RC (Pi)
Resistance - Channel (Ohms): 100
ESD Protection: Yes
Number of Channels: 4
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| NUF6400MNTBG |
|
Hersteller: onsemi
Description: FILTER RC(PI) 100 OHMSESD SMD
Packaging: Tape & Reel (TR)
Package / Case: 12-VFDFN Exposed Pad
Size / Dimension: 0.118" L x 0.053" W (3.00mm x 1.35mm)
Mounting Type: Surface Mount
Type: Low Pass
Operating Temperature: -40°C ~ 85°C
Values: R = 100Ohms, C = 50pF
Height: 0.039" (1.00mm)
Attenuation Value: -30dB @ 800MHz ~ 2.4GHz
Filter Order: 2nd
Applications: Data Lines for Mobile Devices
Technology: RC (Pi)
Center / Cutoff Frequency: 35MHz (Cutoff)
Resistance - Channel (Ohms): 100
ESD Protection: Yes
Part Status: Active
Number of Channels: 6
Current: 20 mA
Description: FILTER RC(PI) 100 OHMSESD SMD
Packaging: Tape & Reel (TR)
Package / Case: 12-VFDFN Exposed Pad
Size / Dimension: 0.118" L x 0.053" W (3.00mm x 1.35mm)
Mounting Type: Surface Mount
Type: Low Pass
Operating Temperature: -40°C ~ 85°C
Values: R = 100Ohms, C = 50pF
Height: 0.039" (1.00mm)
Attenuation Value: -30dB @ 800MHz ~ 2.4GHz
Filter Order: 2nd
Applications: Data Lines for Mobile Devices
Technology: RC (Pi)
Center / Cutoff Frequency: 35MHz (Cutoff)
Resistance - Channel (Ohms): 100
ESD Protection: Yes
Part Status: Active
Number of Channels: 6
Current: 20 mA
auf Bestellung 55500 Stücke:
Lieferzeit 10-14 Tag (e)| Anzahl | Preis |
|---|---|
| 3000+ | 0.42 EUR |
| 6000+ | 0.40 EUR |
| NUF6410MNT1G |
|
Hersteller: onsemi
Description: FILTER RC(PI) 100 OHM/7PF SMD
Packaging: Tape & Reel (TR)
Package / Case: 12-VFDFN Exposed Pad
Size / Dimension: 0.118" L x 0.053" W (3.00mm x 1.35mm)
Mounting Type: Surface Mount
Type: Low Pass
Operating Temperature: -40°C ~ 85°C
Values: R = 100Ohms, C = 7pF
Height: 0.039" (1.00mm)
Attenuation Value: -20dB @ 800MHz ~ 3GHz
Filter Order: 2nd
Applications: Data Lines for Mobile Devices
Technology: RC (Pi)
Center / Cutoff Frequency: 250MHz (Cutoff)
Resistance - Channel (Ohms): 100
ESD Protection: Yes
Number of Channels: 6
Description: FILTER RC(PI) 100 OHM/7PF SMD
Packaging: Tape & Reel (TR)
Package / Case: 12-VFDFN Exposed Pad
Size / Dimension: 0.118" L x 0.053" W (3.00mm x 1.35mm)
Mounting Type: Surface Mount
Type: Low Pass
Operating Temperature: -40°C ~ 85°C
Values: R = 100Ohms, C = 7pF
Height: 0.039" (1.00mm)
Attenuation Value: -20dB @ 800MHz ~ 3GHz
Filter Order: 2nd
Applications: Data Lines for Mobile Devices
Technology: RC (Pi)
Center / Cutoff Frequency: 250MHz (Cutoff)
Resistance - Channel (Ohms): 100
ESD Protection: Yes
Number of Channels: 6
auf Bestellung 3000 Stücke:
Lieferzeit 10-14 Tag (e)| Anzahl | Preis |
|---|---|
| 3000+ | 0.43 EUR |
| NUF8000MUT2G |
|
Hersteller: onsemi
Description: FILTER RC(PI) 100 OHM/15PF SMD
Packaging: Tape & Reel (TR)
Package / Case: 16-UFDFN Exposed Pad
Size / Dimension: 0.138" L x 0.047" W (3.50mm x 1.20mm)
Mounting Type: Surface Mount
Type: Low Pass
Operating Temperature: -40°C ~ 85°C
Values: R = 100Ohms, C = 15pF
Height: 0.022" (0.55mm)
Attenuation Value: -30dB @ 800MHz ~ 5GHz
Filter Order: 2nd
Applications: Data Lines for Mobile Devices
Technology: RC (Pi)
Center / Cutoff Frequency: 95MHz (Cutoff)
Resistance - Channel (Ohms): 100
ESD Protection: Yes
Number of Channels: 8
Description: FILTER RC(PI) 100 OHM/15PF SMD
Packaging: Tape & Reel (TR)
Package / Case: 16-UFDFN Exposed Pad
Size / Dimension: 0.138" L x 0.047" W (3.50mm x 1.20mm)
Mounting Type: Surface Mount
Type: Low Pass
Operating Temperature: -40°C ~ 85°C
Values: R = 100Ohms, C = 15pF
Height: 0.022" (0.55mm)
Attenuation Value: -30dB @ 800MHz ~ 5GHz
Filter Order: 2nd
Applications: Data Lines for Mobile Devices
Technology: RC (Pi)
Center / Cutoff Frequency: 95MHz (Cutoff)
Resistance - Channel (Ohms): 100
ESD Protection: Yes
Number of Channels: 8
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH